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"Effect of short circuit aging on safe operating area of SiC MOSFET."

Tien Anh Nguyen, Stéphane Lefebvre, Stephane Azzopardi (2018)

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DOI: 10.1016/J.MICROREL.2018.06.040

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/NguyenLA18
Tien Anh Nguyen, Stéphane Lefebvre, Stephane Azzopardi:
Effect of short circuit aging on safe operating area of SiC MOSFET. Microelectron. Reliab. 88-90: 645-651 (2018)

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