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Xing Zhang 0002
Person information
- affiliation: Peking University, Institute of Microelectronics, Beijing, China
Other persons with the same name
- Xing Zhang — disambiguation page
- Xing Zhang 0001
— Beijing University of Posts and Telecommunications, School of Information and Communications Engineering, China
- Xing Zhang 0003
- Xing Zhang 0004
- Xing Zhang 0005
- Xing Zhang 0006
- Xing Zhang 0007
- Xing Zhang 0008 — Guangdong University of Foreign Studies, Laboratory of Language Engineering and Computing, Guangzhou, China (and 1 more)
- Xing Zhang 0009
- Xing Zhang 0010
- Xing Zhang 0011
- Xing Zhang 0012 — SUNY, Binghamton University, NY, USA
- Xing Zhang 0013
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2020 – today
- 2024
- [j40]Yongliang Chen
The area-efficient gate level information flow tracking schemes of digital circuit with multi-level security lattice. Microelectron. J. 144: 106088 (2024) - [c47]Zilong Shen, Jiaiun Tang, Haoyang Luo, Zhongyi Wu, Zongnan Wang, Xing Zhang, Xiyuan Tang, Yuan Wang:
A 181.8dB FoMs Zoom Capacitance-to-Digital Converter with kT/C Noise Cancellation and Dead Band Operation. CICC 2024: 1-2 - [c46]Siyuan Ye, Linxiao Shen, Jihang Gao, Jie Li, Zhuoyi Chen, Xinhang Xu, Jiajia Cui, Hao Zhang, Xing Zhang, Le Ye, Ru Huang:
9.1 A 2mW 70.7dB SNDR 200MS/s Pipelined-SAR ADC with Continuous-Time SAR-Assisted Detect-and-Skip and Open-then-Close Correlated Level Shifting. ISSCC 2024: 168-170 - [c45]Weichen Xu
Point Cloud Reconstruction Is Insufficient to Learn 3D Representations. ACM Multimedia 2024: 8471-8479 - 2023
- [c44]Zilong Shen, Xiyuan Tang, Zhongyi Wu, Haoyang Luo, Zongnan Wang, Mingjie Liu, Xing Zhang, Yuan Wang:
A 9.7fJ/Conv.-Step Capacitive Sensor Readout Circuit with Incremental Zoomed Time Domain Quantization. CICC 2023: 1-2 - 2022
- [j39]Jingyi Liu, Xia An, Gensong Li, Zhexuan Ren, Ming Li, Xing Zhang, Ru Huang:
Single event transients induced by pulse laser in Ge pMOSFETs and its supply voltage dependence. Sci. China Inf. Sci. 65(8): 1-2 (2022) - [j38]Zilong Shen
A Scalable Model for Snapback Characteristics of Circuit-Level ESD Simulation. IEEE Trans. Circuits Syst. II Express Briefs 69(3): 1547-1551 (2022) - [c43]Mi Zhang, Mengyu Hu, Xing Zhang:
A Method for Fast Re-localization of Sweeping Robot. ICARM 2022: 713-716 - [c42]Jingjie Shang, Jian Cao, Kunchang Li, Kaibin Tian, Xing Zhang:
MVP: Robust Multi-View Practice for Driving Action Localization. ICISCAE 2022: 213-218 - [c41]Zilong Shen, Yize Wang, Xing Zhang, Yuan Wang:
A Novel Low-Leakage ESD Power Clamp Circuit with Adjustable Transient Response Time. ISCAS 2022: 3488-3492 - 2021
- [j37]Zhexuan Ren, Xia An, Gensong Li, Xing Zhang, Ru Huang:
Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET. Sci. China Inf. Sci. 64(2) (2021) - [c40]Changpei Qiu, Xin'an Wang, Xing Zhang, Tianxia Zhao, Qiuping Li, Hu Wang:
A High Linearity Process Angle Interference Resistant Multi-phase Output Digital Control Oscillator with Negative Feedback. RobCE 2021: 70-77 - [c39]Changpei Qiu, Xin'an Wang, Xing Zhang, Bo Wang, Tianxia Zhao, Qiuping Li:
A high precision, high linearity 10 bit Digital-to-Time Converter circuit. RobCE 2021: 78-84 - 2020
- [c38]Changjin Li, Jian Cao, Xing Zhang:
Robust Deep Learning Method to Detect Face Masks. AIAM 2020: 74-77 - [c37]Jianrong He, Xin'an Wang, Xing Zhang, Bo Wang, Qiuping Li, Changpei Qiu:
Unvoiced Speech Recognition Algorithm Based on Myoelectric Signal. ICMLC 2020: 450-456 - [c36]Junhui Xi, Tianxia Zhao, Qiuping Li, Bo Wang, Xin'an Wang, Xing Zhang:
The Research on Feature Extraction Method of ECG Signal Based on KPCA Dimension Reduction. ICMLC 2020: 500-504
2010 – 2019
- 2019
- [j36]Lizhong Zhang, Yuan Wang, Yize Wang, Xing Zhang, Yandong He:
Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection. Sci. China Inf. Sci. 62(6): 62402:1-62402:8 (2019) - [j35]Huimin Wang, Qianqian Huang, Mengxuan Yang, Xing Zhang, Ru Huang:
Deep insight into the voltage amplification effect from ferroelectric negative capacitance. Sci. China Inf. Sci. 62(8): 89401:1-89401:3 (2019) - [c35]Zekai Wang, Hongzhi Liu, Yingpeng Du, Zhonghai Wu, Xing Zhang:
Unified Embedding Model over Heterogeneous Information Network for Personalized Recommendation. IJCAI 2019: 3813-3819 - 2018
- [j34]Bingxin Zhang, Xia An, Xiangyang Hu, Ming Li, Xing Zhang, Ru Huang:
GeC film with high substitutional carbon concentration formed by ion implantation and solid phase epitaxy for strained Ge n-MOSFETs. Sci. China Inf. Sci. 61(6): 069405:1-069405:3 (2018) - [j33]Bingxin Zhang, Xia An, Pengqiang Liu, Xiangyang Hu, Ming Li, Xing Zhang, Ru Huang:
Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology. Sci. China Inf. Sci. 61(10): 109401:1-109401:3 (2018) - [j32]Yuan Wang
A 1-Gbps reference-less burst-mode CDR with embedded TDC in a 65-nm CMOS process. Int. J. Circuit Theory Appl. 46(8): 1565-1576 (2018) - [j31]Hongzhi Liu
CPLR: Collaborative pairwise learning to rank for personalized recommendation. Knowl. Based Syst. 148: 31-40 (2018) - [c34]Yingpeng Du, Hongzhi Liu
Hierarchical Hybrid Feature Model for Top-N Context-Aware Recommendation. ICDM 2018: 109-116 - [c33]Guangyi Lu, Yuan Wang, Lizhong Zhang, Yize Wang, Ru Huang, Xing Zhang:
Investigation on the Gate Bias Voltage of BigFET in Power-rail ESD Clamp Circuit for Enhanced Transient Noise Immunity. ISCAS 2018: 1-5 - [c32]Lu Zhang, Jin Zhang, Yuan Wang, Xing Zhang, Ru Huang:
A Multi-Mode Silicon Neuron Circuit With High Robustness Against PVT Variation. ISCAS 2018: 1-4 - 2017
- [j30]Cong Li
A practical construction for large universe hierarchical attribute-based encryption. Concurr. Comput. Pract. Exp. 29(17) (2017) - [j29]Yize Wang, Yuan Wang
A novel TLP-based method to deliver IEC 61000-4-2 ESD stress. IEICE Electron. Express 14(9): 20170163 (2017) - [j28]Yuan Wang
Power-Rail ESD Clamp Circuit with Parasitic-BJT and Channel Parallel Shunt Paths to Achieve Enhanced Robustness. IEICE Trans. Electron. 100-C(3): 344-347 (2017) - [j27]Yuan Wang
Delay-locked loop based clock and data recovery with wide operating range and low jitter in a 65-nm CMOS process. Int. J. Circuit Theory Appl. 45(6): 851-858 (2017) - [c31]Yixia Liu, Xiaoxin Cui, Jian Cao, Xing Zhang:
A hybrid fault model for differential fault attack on AES. ASICON 2017: 784-787 - [c30]Yukuai Chen, Jian Cao, Zhang Qihui, Yuan Wang
A novel equivalent circuit model of the surge wave generator. ASICON 2017: 807-810 - [c29]Guangyi Lu, Yuan Wang
Power-rail ESD clamp circuit with hybrid-detection enhanced triggering in a 65-nm, 1.2-V CMOS process. ISCAS 2017: 1-4 - [c28]Jin Zhang, Yuan Wang
Compact digital-controlled neuromorphic circuit with low power consumption. ISCAS 2017: 1-4 - 2016
- [j26]Yuan Wang
Area-efficient transient power-rail electrostatic discharge clamp circuit with mis-triggering immunity in a 65-nm CMOS process. Sci. China Inf. Sci. 59(4): 042407:1-042407:9 (2016) - [j25]Jian Cao, Jingya Xu, Yuan Wang
A compact SCR model using advanced BJT models and standard SPICE elements. Sci. China Inf. Sci. 59(10): 109302 (2016) - [j24]Guangyi Lu, Yuan Wang
Design of a novel static-triggered power-rail ESD clamp circuit in a 65-nm CMOS process. Sci. China Inf. Sci. 59(12): 122401:1-122401:9 (2016) - [j23]Jian Cao, Yize Wang, Yuan Wang
A novel SPICE circuit model of electrostatic discharge (ESD) generator. IEICE Electron. Express 13(9): 20160238 (2016) - [j22]Ke Lin, Xin'an Wang, Xing Zhang, Bo Wang, Tingbing Ouyang:
A PVT-independent Schmitt trigger with fully adjustable hysteresis threshold voltages for low-power 1-bit digitization applications. IEICE Electron. Express 13(17): 20160650 (2016) - [j21]Guangyi Lu, Yuan Wang
Optimization on Layout Strategy of Gate-Grounded NMOS for On-Chip ESD Protection in a 65-nm CMOS Process. IEICE Trans. Electron. 99-C(5): 590-596 (2016) - [j20]Yuan Wang
A 4.8-6.8 GHz low phase noise LC VCO in 0.13-µm CMOS technology. Int. J. Circuit Theory Appl. 44(9): 1758-1764 (2016) - [c27]Yuan Wang
Delay-locked loop based frequency quadrupler with wide operating range and fast locking characteristics. ISCAS 2016: 1-4 - [c26]Guangyi Lu, Yuan Wang
A novel low-leakage power-rail ESD clamp circuit with adjustable triggering voltage and superior false-triggering immunity for nanoscale applications. ISCAS 2016: 265-268 - 2015
- [j19]Meng Lin, Xia An, Ming Li, Quanxin Yun, Min Li, Zhiqiang Li, Pengqiang Liu, Xing Zhang, Ru Huang:
Ge surface passivation by GeO2 fabricated by N2O plasma oxidation. Sci. China Inf. Sci. 58(4): 1-5 (2015) - [j18]Guangyi Lu, Yuan Wang
Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling. Sci. China Inf. Sci. 58(4): 1-9 (2015) - [j17]Yuan Wang
Novel DEM Technique for Current-Steering DAC in 65-nm CMOS Technology. IEICE Trans. Electron. 98-C(12): 1193-1195 (2015) - [c25]Hongzhi Liu
An information-theoretic feature selection method based on estimation of Markov blanket. ICCI*CC 2015: 327-332 - [c24]Jian Cao, Zhenxu Ye, Yuan Wang
A low-leakage power clamp ESD protection circuit with prolonged ESD discharge time and compact detection network. ASICON 2015: 1-4 - [c23]Fangyuan Dang, Yuan Wang
Design on multi-bit adder using sense amplifier-based pass transistor logic for near-threshold voltage operation. ASICON 2015: 1-4 - [c22]Nan Han, Yuan Wang
Four-bit transient-to-digital converter with a single RC-based detection circuit for system-level ESD protection. ASICON 2015: 1-4 - [c21]Mengyin Jiang, Yuan Wang
A reference-less all-digital burst-mode CDR with embedded TDC. ASICON 2015: 1-4 - [c20]Qihui Zhang, Jian Cao, Xixin Cao, Xing Zhang, Yin Ye, Yanguang Zhao, Botao Chen:
Optimization design of a low power asynchronous DES for security applications based on Balsa and synchronous tools. CONIELECOMP 2015: 124-129 - [c19]Xing Zhang, Cancan Jin, Zilong Wen, Qingni Shen, Yuejian Fang, Zhonghai Wu:
Attribute-Based Encryption Without Key Escrow. ICCCS 2015: 74-87 - [c18]Hongzhi Liu
Feature Selection Based on Data Clustering. ICIC (1) 2015: 227-236 - [c17]Yuequan Liu, Yuan Wang
180.5Mbps-8Gbps DLL-based clock and data recovery circuit with low jitter performance. ISCAS 2015: 1394-1397 - [c16]Ying Guo, Ling Shen, Fan Yang, Yongan Zheng, Long Chen, Xing Zhang, Huailin Liao:
A 0.5-2 GHz high frequency selectivity RF front-end with series N-path filter. ISCAS 2015: 2217-2220 - [c15]Xing Zhang, Cancan Jin, Cong Li, Zilong Wen, Qingni Shen, Yuejian Fang, Zhonghai Wu:
Ciphertext-Policy Attribute-Based Encryption with User and Authority Accountability. SecureComm 2015: 500-518 - 2014
- [j16]Peng Zhang, Yuan Wang
Novel silicon-controlled rectifier (SCR) for digital and high-voltage ESD power supply clamp. Sci. China Inf. Sci. 57(2): 1-6 (2014) - [j15]Zhongyuan Hou, Fan Yang, Junhua Liu, Xing Zhang:
A power efficient 1.0625-3.125 Gb/s serial transceiver in 130 nm digital CMOS for multi-standard applications. Sci. China Inf. Sci. 57(6): 1-10 (2014) - [j14]Yandong He, Ganggang Zhang, Xing Zhang:
NBTI degradation in STI-based LDMOSFETs. Microelectron. Reliab. 54(9-10): 1940-1943 (2014) - [c14]Ying Guo, Long Chen, Tao Xia, Le Ye, Xing Zhang, Huailin Liao:
A UHF RFID reader transmitter with digital CMOS power amplifier. ISCAS 2014: 702-705 - 2013
- [j13]Yuan Wang
Thermo data-weighted average dynamic element matching (DEM) encoder for current-steering DACs. IEICE Electron. Express 10(20): 20130459 (2013) - [j12]Hongzhi Liu
A skeleton pruning algorithm based on information fusion. Pattern Recognit. Lett. 34(10): 1138-1145 (2013) - [c13]Baoguang Liu, Yuan Wang
A novel dynamic element match technique in current-steering DAC. ASICON 2013: 1-4 - [c12]Guangyi Lu, Yuan Wang
Novel gate-voltage-bias techniques for gate-coupled MOS (GCMOS) ESD protection circuits. ASICON 2013: 1-4 - [c11]Yandong He, Jie Hong, Ganggang Zhang, Lin Han, Xing Zhang:
A monitoring circuit for NBTI degradation at 65nm technology node. ISCAS 2013: 2083-2086 - 2012
- [j11]Ziyi Hu, Yong Zhao, Xin'an Wang, Ru Huang, Teng Wang, Xing Zhang:
Theory and verification of operator design methodology. Sci. China Inf. Sci. 55(2): 480-490 (2012) - 2011
- [j10]Hongyi Li, Yuan Wang
Novel single-loop multi-bit sigma-delta modulator using OTA sharing technique without DEM. IEICE Electron. Express 8(24): 2041-2047 (2011) - [j9]Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang:
A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection. Microelectron. Reliab. 51(2): 337-341 (2011) - [c10]Peng Zhang, Yuan Wang
A novel multi-finger layout strategy for GGnMOS ESD protection device. ASICON 2011: 275-278 - 2010
- [j8]Chenyue Ma, Hao Wang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang:
Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device. Microelectron. Reliab. 50(8): 1077-1080 (2010) - [c9]Chenyue Ma, Hao Wang, Xiufang Zhang, Frank He, Yadong He, Xing Zhang, Xinnan Lin:
Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits. ISQED 2010: 432-436
2000 – 2009
- 2009
- [j7]Ru Huang, HanMing Wu, Jinfeng Kang, DeYuan Xiao, XueLong Shi, Xia An, Yu Tian, Runsheng Wang, Liangliang Zhang
Challenges of 22 nm and beyond CMOS technology. Sci. China Ser. F Inf. Sci. 52(9): 1491-1533 (2009) - [c8]Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. ISQED 2009: 7-12 - [c7]Lining Zhang, Jin He, Jian Zhang, Feng Liu, Yue Fu, Yan Song, Xing Zhang:
An analytic model for Ge/Si core/shell nanowire MOSFETs considering drift-diffusion and ballistic transport. ISQED 2009: 582-587 - 2008
- [j6]Yangyuan Wang, Xing Zhang, Xiaoyan Liu, Ru Huang:
Novel devices and process for 32 nm CMOS technology and beyond. Sci. China Ser. F Inf. Sci. 51(6): 743-755 (2008) - [j5]Ru Huang, FaLong Zhou, Yimao Cai, DaKe Wu, Xing Zhang:
Novel vertical channel double gate structures for high density and low power flash memory applications. Sci. China Ser. F Inf. Sci. 51(6): 799-806 (2008) - [c6]Liangguo Shen, Zushu Yan, Xing Zhang, Yuanfu Zhao:
A capacitor-less low-dropout regulator for SoC with bi-directional asymmetric buffer. ISCAS 2008: 2677-2680 - [c5]Feng Liu, Jin He, Yue Fu, Jinhua Hu, Wei Bian, Yan Song, Xing Zhang, Mansun Chan
Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes. ISQED 2008: 271-276 - 2007
- [c4]Liangguo Shen, Zushu Yan, Xing Zhang, Yuanfu Zhao:
High-Accuracy Low-Dropout Voltage Regulator Based on Slow-Rolloff Frequency Compensation. ICECS 2007: 767-770 - [c3]Liangguo Shen, Zushu Yan, Xing Zhang, Yuanfu Zhao, Yuan Wang:
Design of High-Performance Voltage Regulators Based on Frequency-Dependent Feedback Factor. ISCAS 2007: 3828-3831 - 2006
- [c2]Jin He, Xing Zhang, Ganggang Zhang, Mansun Chan, Yangyuan Wang:
A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs. ISQED 2006: 115-120 - [c1]Jin He, Xing Zhang, Ganggang Zhang, Yangyuan Wang:
A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs. ISQED 2006: 127-132 - 2003
- [j4]Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang:
Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. Microelectron. Reliab. 43(5): 707-711 (2003) - 2002
- [j3]Jin He, Xing Zhang, Ru Huang, Yangyuan Wang:
Application of forward gated-diode R-G current method in extracting F-N stress-induced interface traps in SOI NMOSFETs. Microelectron. Reliab. 42(1): 145-148 (2002) - 2001
- [j2]Ru Huang, Weihai Bu, Xing Zhang, Yangyuan Wang:
Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile. Sci. China Ser. F Inf. Sci. 44(1): 60-67 (2001) - [j1]Jin He, Xing Zhang, Ru Huang, Yangyuan Wang:
Extraction of the lateral distribution of interface traps in MOSFETs by a novel combined gated-diode technique. Microelectron. Reliab. 41(12): 1953-1957 (2001)
Coauthor Index
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