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Nanomaterials
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Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept...
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Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Solar Energy and Solar Cells".

Deadline for manuscript submissions: 8 August 2025 | Viewed by 567

Special Issue Editors

Dr. Shuhong Xu

E-Mail Website
Guest Editor
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
Interests: optoelectronic functional materials and devices
Dr. Yi Zhang

E-Mail Website
Guest Editor
College of Renewable Energy, Hohai University, Nanjing, China
Interests: thermalization mechanism; ultrafast carrier dynamics; hot carrier solar cells; III-V quantum well structure; thermal photovoltaic solar cells; III-V bulk semiconductors; perovskite photovoltaic materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The development of fundamental theories, such as solid-state physics, quantum mechanics and energy band theory, not only accelerates the development of semiconductor physics, but also makes semiconductor device manufacturing gradually develop into energy band engineering-based device manufacturing. Compared with the traditional silicon-based semiconductors, the III-V group compound semiconductors represented by GaAs, GaP and InP possess the features of high band-gap width, electron mobility and electron saturation rate, making them more applicable for high-speed, high-frequency and high-power optoelectronic devices under high temperature and intense irradiance conditions. Moreover, the low-dimensional limited structure materials consisting of II-VI group semiconductors like CdS, CdTe and CdSe further diversify the material systems for optoelectronic devices. Meanwhile, halide perovskite has experienced rapid development in both fundamental research and applications in different devices. These devices are widely used in photovoltaic solar cells, power electronic devices, lasers, chemical and biological detection and semiconductor lighting, inducing a series of scientific problems in the interdisciplinary field of physics, optics, material science, optoelectronics, and so on. This Special Issue aims to collect the latest research progress of such semiconductors in the field of solar cell, solid-state physics, optics and optoelectronics, and to explore the basic scientific theories and practical technical applications.

Dr. Shuhong Xu
Dr. Yi Zhang
Guest Editors

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Keywords

  • II-VI semiconductors
  • III-V semiconductors
  • halide perovskite
  • solid-state physics
  • optics
  • optoelectronics
  • laser
  • detector
  • photovoltaic solar cell
  • ultrafast carrier dynamics

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Published Papers (1 paper)

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Research

9 pages, 4545 KiB  
Article
Study of Thermalization Mechanisms of Hot Carriers in BABr-Added MAPbBr3 for the Top Layer of Four-Junction Solar Cells
by Yi Zhang, Huilong Chen, Junfeng Qu, Jiayu Zhang and Gavin Conibeer
Nanomaterials 2024, 14(24), 2041; https://doi.org/10.3390/nano14242041 - 19 Dec 2024
Viewed by 329
Abstract
The hot carrier multi-junction solar cell (HCMJC) is an advanced-concept solar cell with a theoretical efficiency greater than 65%. It combines the advantages of hot carrier solar cells and multi-junction solar cells with higher power conversion efficiency (PCE). The thermalization coefficient (Q [...] Read more.
The hot carrier multi-junction solar cell (HCMJC) is an advanced-concept solar cell with a theoretical efficiency greater than 65%. It combines the advantages of hot carrier solar cells and multi-junction solar cells with higher power conversion efficiency (PCE). The thermalization coefficient (Qth) has been shown to slow down by an order of magnitude in low-dimensional structures, which will significantly improve PCE. However, there have been no studies calculating the Qth of MAPbBr3 quantum dots so far. In this work, the Qth values of MAPbBr3 quantum dots and after BABr addition were calculated based on power-dependent steady-state photoluminescence (PD-SSPL). Their peak positions in PD-SSPL increased from 2.37 to 2.71 eV after adding BABr. The fitting shows that, after adding BABr, the Qth decreased from 2.64 ± 0.29 mW·K−1·cm−2 to 2.36 ± 0.25 mW·K−1·cm−2, indicating a lower relaxation rate. This is because BABr passivates surface defects, slowing down the carrier thermalization process. This work lays the foundation for the theoretical framework combining perovskite materials, which suggests that the appropriate passivation of BABr has the potential to further reduce Qth and make MAPbBr3 QDs with BABr modified more suitable as the top absorption layer of HCMJCs. Full article
(This article belongs to the Special Issue Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells)
►▼ Show Figures

Figure 1

Figure 1
<p>XRD pattern of MAPbBr<sub>3</sub> with BABr modified.</p> Full article ">Figure 2
<p>(<b>a</b>) The PL spectra for both the pristine and BABr-modified MAPbBr<sub>3</sub> samples. (<b>b</b>) The UV–vis absorption spectra curves and the Tauc plot as inset in (<b>b</b>) for both samples.</p> Full article ">Figure 3
<p>PD-SSPL results in MAPbBr<sub>3</sub> QDs: (<b>a</b>) pristine and (<b>b</b>) with BABr with different power densities in mW·cm<sup>−2</sup>, where the high-energy-tail fitting region is indicated by the shaded area. Absorbed power-dependent carrier temperature for MAPbBr<sub>3</sub> QDs (<b>c</b>) pristine and (<b>d</b>) with BABr modified calculated by high-energy-tail fitting.</p> Full article ">Figure 4
<p><span class="html-italic">P<sub>abs</sub></span>/<span class="html-italic">exp</span>(<span class="html-italic">−E<sub>LO</sub></span>/<span class="html-italic">k<sub>B</sub>T<sub>C</sub></span>) (mW·cm<sup>−2</sup>) as a function of Δ<span class="html-italic">T</span> (K); the gradient indicated by the blue dashed line yields the thermalization coefficient <span class="html-italic">Q<sub>th</sub></span>, with values of 2.64 ± 0.29 mW·K<sup>−1</sup>·cm<sup>−2</sup> and 2.36 ± 0.25 mW·K<sup>−1</sup>·cm<sup>−2</sup> for pristine and with BABr modified.</p> Full article ">Figure 5
<p>The effects of BABr addition on thermalization and <span class="html-italic">Q<sub>th</sub></span> in MAPbBr<sub>3</sub> QDs are analyzed from different perspectives.</p> Full article ">
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