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Preparation, Properties and Applications of Ferroelectric Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: 20 February 2025 | Viewed by 691

Special Issue Editors


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Guest Editor
School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia
Interests: multiferroic materials; scanning probe microscopy
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
Interests: ferroelectrics; scanning transmission electron microscopy; oxide materials

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Guest Editor
Department of Chemistry, University of Paderborn, 33098 Paderborn, Germany
Interests: electrocatalysis; piezocatalysis; photocatalysis; carbon materials; transition metal-based catalysis‬‬‬‬‬
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
Hebei Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang 050018, China
Interests: nanoferroelectric materials; piezocatalysis
Special Issues, Collections and Topics in MDPI journals

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Guest Editor
School of Physics, Southeast University, Nanjing 211189, China
Interests: multiferroic materials; scanning probe microscopy; single crystal growth; epitaxial thin films

Special Issue Information

Dear Colleagues,

Ferroelectric materials, characterized by electrically switchable polarization, can be broadly applied in elemental electronics in modern society. Recently, the materials library of ferroelectrics and associated applications have been expanded by virtue of advanced synthesis techniques and cutting-edge characterization tools. For instance, regarding materials, 2D van der Waals (vdW) ferroelectrics are made available by the chemical vapor transport and the tear-and-stack method; flexible epitaxial thin films are made accessible via the insertion of the sacrificial layer and the transfer technique, etc. Regarding characterization, scanning probe microscope techniques allow for the study of local piezoresponses under external excitations, such as thermal, mechanical and electrical excitations. Moreover, the aberration-corrected scanning transmission electron microscope features an atomic-scale resolution of ferroelectricity. Such advancements in material fabrication and property characterization have not only brought new physics in ferroelectrics, but also found more applications in energy storage, catalysis, logic elements and post-Moore’s law nanoelectronics.

Clearly, the future holds great promise for the utilization of ferroelectric materials in novel applications. This Special Issue aims to showcase the latest advancements in the fabrication, characterization and associated applications of ferroelectrics within various fields. We welcome contributions related to the synthesis and characterization of novel ferroelectrics, theoretical studies exploring new physics and functionalities, and nanoelectronic device developments based on ferroelectrics.

Dr. Dawei Zhang
Dr. Zhipeng Wang
Dr. Ying Pan
Dr. Ran Su
Dr. Linglong Li
Guest Editors

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Keywords

  • ferroelectrics and piezoelectrics
  • energy storage
  • nanoelectronics
  • catalysis

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Published Papers (1 paper)

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Research

13 pages, 4808 KiB  
Article
Impact of Ce Doping on the Relaxor Behavior and Electrical Properties of Sr0.4Ba0.6Nb2O6 Ferroelectric Ceramics
by Yingying Zhao, Pu Mao, Ruirui Kang, Ziao Li and Fang Kang
Materials 2025, 18(1), 74; https://doi.org/10.3390/ma18010074 - 27 Dec 2024
Abstract
In this work, the rare earth element Ce was incorporated into the A-site of Sr0.4Ba0.6Nb2O6 ferroelectric ceramics, which was prepared using the conventional solid state reaction method and sintered under different procedures. A comprehensive investigation was [...] Read more.
In this work, the rare earth element Ce was incorporated into the A-site of Sr0.4Ba0.6Nb2O6 ferroelectric ceramics, which was prepared using the conventional solid state reaction method and sintered under different procedures. A comprehensive investigation was conducted to assess the impact of Ce doping and varying sintering procedures on both the relaxor characteristics and electrical properties of the ceramics. When sintered at 1300 °C for 4 h, the grains exhibited an isometric shape. However, when the sintering temperature increases and the holding time prolongs, the grain size increases and presents columnar crystal. The change tendency of dielectric constant is similar with that of the grain size, and the dielectric peak value of samples sintered at 1300 °C for 4 h is the lowest. But the sintering procedure has almost no influence on the Curie point, which notably decreases as the Ce content rises and is primarily governed by the composition. The diffuseness fitting results and the deviation from the Curie–Weiss law indicate that relaxor characteristics increase with the Ce content increasing. The polarization electric (P-E) loops become slimmer with increasing Ce content, verifying the relaxor behavior variation of samples. As a result, the Pmax and Pr values decrease and the PmaxPr value increases with increasing Ce content. Notably, the energy storage density and efficiency enhance obviously with higher Ce content, which is attributed to the relaxor behavior. Furthermore, at a Ce content of 4 mol%, the P-E loops and energy storage performance exhibit remarkable frequency and fatigue stability. Therefore, this study offers valuable insights into the investigation of relaxor behavior and the influence of rare earth elements on the properties of tungsten bronze-structured ferroelectrics. Full article
(This article belongs to the Special Issue Preparation, Properties and Applications of Ferroelectric Materials)
Show Figures

Figure 1

Figure 1
<p>SEM micrographs of SBN40-xCe ceramics sintered under different conditions: (<b>a1</b>–<b>a3</b>) the SBN40-1Ce ceramics sintered at 1300 °C/4 h, 1300 °C/12 h and 1350 °C/4 h, respectively; (<b>b1</b>–<b>b3</b>) the SBN40-2Ce ceramics sintered at 1300 °C/4 h, 1300 °C/12 h and 1350 °C/4 h, respectively; (<b>c1</b>–<b>c3</b>) the SBN40-4Ce ceramics sintered at 1300 °C/4 h, 1300 °C/12 h and 1350 °C/4 h, respectively (Insets show grain size distribution).</p>
Full article ">Figure 2
<p>(<b>a</b>) XRD patterns of SBN40-xCe ceramics sintered under different conditions, (<b>b</b>) Ce 3<span class="html-italic">d</span> XPS spectra of SBN40-4Ce sample sintered at 1350 °C/4 h (the gray dots are the measured data and the line is the fitting result). Variation of lattice parameters in (<b>c</b>) a-axis and (<b>d</b>) c-axis of SBN40-xCe ceramics sintered under different conditions.</p>
Full article ">Figure 3
<p>Temperature dependence of dielectric constant of SBN40-xCe ceramics: (<b>a1</b>–<b>a3</b>) the SBN40-1Ce ceramics sintered at 1300 °C/4 h, 1300 °C/12 h and 1350 °C/4 h, respectively; (<b>b1</b>–<b>b3</b>) the SBN40-2Ce ceramics sintered at 1300 °C/4 h, 1300 °C/12 h and 1350 °C/4 h, respectively; (<b>c1</b>–<b>c3</b>) the SBN40-4Ce ceramics sintered at 1300 °C/4 h, 1300 °C/12 h and 1350 °C/4 h, respectively.</p>
Full article ">Figure 4
<p>(<b>a</b>) Dielectric constant peak value at 1 kHz, (<b>b</b>) The density of all the SBN40-xCe samples sintered at different procedures, (<b>c</b>) <span class="html-italic">T</span><sub>m</sub> value at 1 kHz of SBN40-xCe ceramics sintered under different conditions.</p>
Full article ">Figure 5
<p>P-E loops of SBN40-xCe ceramics sintered under different conditions: (<b>a</b>) SBN40-1Ce, (<b>b</b>) SBN40-2Ce, (<b>c</b>) SBN40-4Ce, (<b>d</b>) Comparison of P-E loops of SBN40-xCe ceramics at 1350 °C/4 h.</p>
Full article ">Figure 6
<p>(<b>a</b>) Function of <span class="html-italic">P</span><sub>max</sub>, <span class="html-italic">P</span><sub>r</sub>, and <span class="html-italic">P</span><sub>max</sub> − <span class="html-italic">P</span><sub>r</sub> with Ce content, (<b>b</b>) energy storage performance of SBN40-xCe ceramics, (<b>c</b>) comparison of <span class="html-italic">W</span><sub>rec</sub>/<span class="html-italic">E</span> of SBN40-xCe ceramics.</p>
Full article ">Figure 7
<p>(<b>a</b>) P-E loops, (<b>b</b>) variation of <span class="html-italic">P</span><sub>max</sub>, <span class="html-italic">P</span><sub>r</sub>, and <span class="html-italic">P</span><sub>max</sub> − <span class="html-italic">P</span><sub>r</sub>, and (<b>c</b>) <span class="html-italic">W</span><sub>rec</sub> and <span class="html-italic">η</span> of SBN40-4Ce samples at temperatures −30–70 °C at 30 kV/cm.</p>
Full article ">Figure 8
<p>(<b>a</b>,<b>d</b>,<b>g</b>) Unipolar P-E loops of SBN40-4Ce sample sintered at 1350 °C/4 h at different electric fields, frequencies, and cycle numbers. Corresponding <span class="html-italic">P</span><sub>max</sub>, <span class="html-italic">P</span><sub>r</sub>, <span class="html-italic">P</span><sub>max</sub> − <span class="html-italic">P</span><sub>r</sub>, <span class="html-italic">W</span><sub>rec</sub>, and <span class="html-italic">η</span> (<b>b</b>,<b>c</b>) under various electric fields; (<b>e</b>,<b>f</b>) under various frequencies; and (<b>h</b>,<b>i</b>) under different cycle numbers.</p>
Full article ">
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