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Crystals
Special Issues
Emerging Applications of Ferroelectrics in Nanoelectronics and Renewable Energy
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Emerging Applications of Ferroelectrics in Nanoelectronics and Renewable Energy

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (15 October 2024) | Viewed by 3455

Special Issue Editors

Dr. Dawei Zhang

E-Mail Website
Guest Editor
School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia
Interests: multiferroic materials; scanning probe microscopy
Special Issues, Collections and Topics in MDPI journals
Dr. Wenping Geng

E-Mail Website
Guest Editor
Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Taiyuan 030051, China
Interests: ferroelectrics; piezoelectrics; domain wall nanoelectronics
Dr. Ran Su

E-Mail Website
Guest Editor
Hebei Key Laboratory of Photoelectric Control on Surface and Interface, College of Science, Hebei University of Science and Technology, Shijiazhuang 050018, China
Interests: nanoferroelectric materials; piezocatalysis
Special Issues, Collections and Topics in MDPI journals
Dr. Ying Pan

E-Mail Website
Guest Editor
Department of Chemistry, University of Paderborn, 33098 Paderborn, Germany
Interests: electrocatalysis; piezocatalysis; photocatalysis; carbon materials; transition metal-based catalysis‬‬‬‬‬
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Ferroelectric materials, characterized by electrically switchable polarization, have found broad and mature applications in conventional transducers, actuators, and sensors in modern society. Recently, novel ferroelectric materials, made available by advanced synthesis techniques such as freestanding epitaxial thin films, nanometer/sub-nanometer nanoparticles/nanowires, organic ferroelectrics, and 2D van der Waals (vdW) ferroelectrics, have found applications in low-energy electronics and renewable energy. For example, based on the atomic thicknesses and complementary metal-oxide-semiconductor (CMOS) compatibility of 2D vdW ferroelectrics, ferroelectric materials can be used for post-Moore’s law nanoelectronics, including beyond-Boltzmann transistors, nonvolatile memories, and photoelectronic devices. Based on the polymer-like flexibility of ferroelectric nanowires, nanoferroic materials have found new applications in piezocatalysis for water splitting.

It is clear that the future holds great promise for the use of ferroelectric materials in novel applications. This Special Issue aims to showcase the latest advancements in ferroelectric materials and their diverse applications in various fields. We welcome contributions related to the synthesis and characterization of novel ferroelectrics, theoretical studies exploring new physics and functionalities, and nanoelectronic device developments involving vdW ferroelectrics.

Dr. Dawei Zhang
Dr. Wenping Geng
Dr. Ran Su
Dr. Ying Pan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ferroelectrics
  • nanoferroelectric materials
  • nanoelectronics
  • catalysis

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Further information on MDPI's Special Issue polices can be found here.

Published Papers (3 papers)

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Research

11 pages, 12136 KiB  
Article
Solvent-Dependent Triboelectric Output Performance of Poly(vinylidene fluoride–trifluoroethylene–chlorofluoroethylene) Terpolymer
by Ying Chieh Hu, Hyun Soo Ahn, Joo Hyeong Lee, Kyung Hoon Kim, Jong Hun Kim and Jong Hoon Jung
Crystals 2024, 14(7), 664; https://doi.org/10.3390/cryst14070664 - 19 Jul 2024
Viewed by 820
Abstract
The poly (vinylidene fluoride–trifluoroethylene–chlorofluoroethylene) P(VDF-TrFE-CFE) terpolymer has been identified as a promising candidate for the effective conversion of low-frequency mechanical vibrations into electricity. In this study, we provide a comprehensive and systematic investigation of the solvent-dependent mechanical, microstructural, electrical, frictional properties and triboelectric [...] Read more.
The poly (vinylidene fluoride–trifluoroethylene–chlorofluoroethylene) P(VDF-TrFE-CFE) terpolymer has been identified as a promising candidate for the effective conversion of low-frequency mechanical vibrations into electricity. In this study, we provide a comprehensive and systematic investigation of the solvent-dependent mechanical, microstructural, electrical, frictional properties and triboelectric output performance of a relaxor ferroelectric P(VDF-TrFE-CFE) terpolymer. The P(VDF-TrFE-CFE) terpolymer films obtained from high dipole moment solvents have a longer rod-shaped grain than those from low dipole moment solvents. The crystallinity, Young’s modulus and dielectric constant of P(VDF-TrFE-CFE) terpolymer become larger as the dipole moment of solvents increases, while the remnant polarization remains almost the same. The P(VDF-TrFE-CFE) terpolymer film obtained from the highest dipole moment solvent generates almost 1.55 times larger triboelectric charge than that obtained from the lowest moment. We attributed this large difference to the greatly enhanced lateral friction of terpolymer film obtained from high dipole moment solvents. Full article
(This article belongs to the Special Issue Emerging Applications of Ferroelectrics in Nanoelectronics and Renewable Energy)
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Graphical abstract

Graphical abstract
Full article ">Figure 1
<p>(<b>a</b>) X-ray diffraction pattern; (<b>b</b>) differential scanning calorimetry heating thermogram; (<b>c</b>) Young’s modulus of P(VDF-TrFE-CFE) terpolymer films obtained from THF, MEK, DMF and DMSO solvents. The dashed lines near the melting temperature in (<b>b</b>) represent the linear baselines for the enthalpy calculation.</p> Full article ">Figure 2
<p>(<b>a</b>) Atomic force microscopy (5 × 5 μm<sup>2</sup>); (<b>b</b>) top and (<b>c</b>) side views of scanning electron microscopy images of P(VDF-TrFE-CFE) terpolymer films on an ITO-glass substrate. In (<b>a</b>), we show the root-mean-square values of roughness (<span class="html-italic">R</span><sub>rms</sub>) for each image.</p> Full article ">Figure 3
<p>Temperature-dependent (<b>a</b>) dielectric constant and (<b>b</b>) loss tanδ of P(VDF-TrFE-CFE) terpolymer films obtained from THF, MEK, DMF and DMSO solvents. (<b>c</b>) Vogel–Fulcher law fitting (red lines) of dielectric constant peaks with respect to temperature and frequency.</p> Full article ">Figure 4
<p>Polarization–electric field (P-E) hysteresis loops of P(VDF-TrFE-CFE) terpolymer films obtained from THF, MEK, DMF and DMSO solvents at driving frequencies of (<b>a</b>) 1 Hz and (<b>b</b>) 1 kHz.</p> Full article ">Figure 5
<p>(<b>a</b>) Open-circuit voltage and (<b>b</b>) short-circuit current of P(VDF-TrFE-CFE)-based triboelectric nanogenerators (TENGs). (<b>c</b>) Comparison of the triboelectric charge with respect to lateral friction, dielectric constant and remnant polarization of P(VDF-TrFE-CFE) terpolymer films obtained from THF, MEK, DMF and DMSO solvents.</p> Full article ">
11 pages, 4700 KiB  
Article
Ferroelectric Domain Intrinsic Radiation Resistance of Lithium Niobate Ferroelectric Single−Crystal Film
by Jiahe Li, Jinlong He, Liya Niu, Hao Lu, Xiaojun Qiao, Bo Zhong, Mingzhu Xun, Xiujian Chou and Wenping Geng
Crystals 2024, 14(6), 537; https://doi.org/10.3390/cryst14060537 - 7 Jun 2024
Viewed by 1200
Abstract
The study of the properties of ferroelectric materials against irradiation has a long history. However, anti−irradiation research on the ferroelectric domain has not been carried out. In this paper, the irradiation of switched domain structure is innovatively proposed. The switched domain of 700 [...] Read more.
The study of the properties of ferroelectric materials against irradiation has a long history. However, anti−irradiation research on the ferroelectric domain has not been carried out. In this paper, the irradiation of switched domain structure is innovatively proposed. The switched domain of 700 nm lithium niobate (LiNbO3, LN) thin film remains stable after gamma irradiation from 1 krad to 10 Mrad, which was prepared by piezoresponse force microscopy (PFM). In addition, the changing law of domain wall resistivity is explored through different sample voltages, and it is verified that the irradiated domain wall conductivity is still larger than the domain. This domain wall current (DWC) property can be applied to storage, logic, sensing, and other devices. Based on these, a ferroelectric domain irradiation resistance model is established, which explains the reason at an atomic level. The results open a possibility for exploiting ferroelectric materials as the foundation in the application of space and nuclear fields. Full article
(This article belongs to the Special Issue Emerging Applications of Ferroelectrics in Nanoelectronics and Renewable Energy)
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Figure 1

Figure 1
<p>Schematic flow diagram of ferroelectric single crystal thin film preparation process: (<b>a</b>) He<sup>+</sup> ion implantation; (<b>b</b>) magnetron sputtering 50nmPt; (<b>c</b>) direct bonding of LN bulk to substrate; (<b>d</b>) annealing, stripping at sacrificial layer; and (<b>e</b>) optical grade LN obtained after CMP.</p> Full article ">Figure 2
<p>(<b>a</b>) Schematic of LiNbO<sub>3</sub> ferroelectric crystal lattice; (<b>b</b>) schematic diagram of domain switching.</p> Full article ">Figure 3
<p>(<b>a</b>) Lithium niobate switched domain surface morphology; (<b>b</b>) amplitude retrace diagram of lithium niobate switched domain; (<b>c</b>) phase diagram of lithium niobate switched domain; (<b>d</b>) 3D plot of lithium niobate switched domain phase; (<b>e</b>) orange and green cutoffs in (<b>c</b>) correspond to phase curve.</p> Full article ">Figure 4
<p>Switched domain before and after 1 krad–10 Mrad gamma irradiation.</p> Full article ">Figure 5
<p>(<b>a</b>) Domain wall current with different sample voltage; (<b>b</b>) current graph of 10 μm × 10 μm region with different sample voltage.</p> Full article ">Figure 6
<p>Domain wall current after 0 rad to 10 Mrad gamma irradiation: (<b>a</b>) c−AFM scan after various doses of irradiation at −7 V; (<b>b</b>) domain wall currents after different total doses of gamma irradiation.</p> Full article ">Figure 7
<p>Diagram of gamma particles transferring energy to Li<sup>+</sup>: (<b>a</b>) gamma particle collides with an electron, turns it into high energy electron; (<b>b</b>) energetic electron and scattered gamma particles collide with Li<sup>+</sup>; (<b>c</b>) Li<sup>+</sup> consumes energy through random thermal motion; (<b>d</b>) after energy accumulation exceeds the threshold, Li<sup>+</sup> moves through oxygen plane.</p> Full article ">Figure 8
<p>XRD spectra of the γ−ray irradiated LN thin films, doses up to 1 Mrad.</p> Full article ">
9 pages, 1931 KiB  
Article
Influence of Stress on the Chiral Polarization and Elastrocaloric Effect in BaTiO3 with 180° Domain Structure
by Yuanyuan Shi and Bo Li
Crystals 2024, 14(6), 511; https://doi.org/10.3390/cryst14060511 - 28 May 2024
Viewed by 726
Abstract
The polarization and elastrocaloric effect of chiral barium titanate (BaTiO3) with an Ising–Bloch-type domain wall under stress was investigated using the Landau–Ginzburg–Devonshire (LGD) theory. It has been shown that tensile stresses increase the magnitude of the Ising polarization component in barium [...] Read more.
The polarization and elastrocaloric effect of chiral barium titanate (BaTiO3) with an Ising–Bloch-type domain wall under stress was investigated using the Landau–Ginzburg–Devonshire (LGD) theory. It has been shown that tensile stresses increase the magnitude of the Ising polarization component in barium titanate, together with a decrease in the domain wall width. Compressive stresses cause a reduction in the Ising polarization component and an increase in the domain width. Under compressive stress, barium titanate exhibits a negative elastrocaloric effect and temperature changes with increasing stress, while BaTiO3 exhibits a positive elastrocaloric effect under tensile stress. Bloch polarization shows angle-dependent polarization under external force, but the temperature change from the elastrocaloric effect is smaller than that of Ising polarization under stress. This work contributes to the understanding of polarization evolution under tension in ferroelectrics with chiral structure. Full article
(This article belongs to the Special Issue Emerging Applications of Ferroelectrics in Nanoelectronics and Renewable Energy)
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Figure 1

Figure 1
<p>(<b>a</b>) Schematic representation of the polarized components of the Ising and Bolch type; (<b>b</b>) Ising type of the polarized components as a function of position in BaTiO<sub>3</sub> at room temperature. (<b>c</b>) Relationship between Ising polarized component and tensile and compressive stresses at room temperature.</p> Full article ">Figure 2
<p>Temperature variation in Ising polarization components in BaTiO<sub>3</sub> under (<b>a</b>) compressive and (<b>b</b>) tensile stresses. The average (Δ<span class="html-italic">T</span><sub>mean</sub>), maximum (Δ<span class="html-italic">T</span><sub>max</sub>) and minimum (Δ<span class="html-italic">T</span><sub>min</sub>) value of BaTiO<sub>3</sub> as a function of (<b>c</b>) compressive and (<b>d</b>) tensile stresses.</p> Full article ">Figure 3
<p>(<b>a</b>) The polarization component of <span class="html-italic">P</span><sub>2</sub> as a function of rotation angle <span class="html-italic">π</span> in the BaTiO<sub>3</sub> under compression. (<b>b</b>) The magnitude of <span class="html-italic">P</span><sub>2</sub> at <span class="html-italic">π</span>/24 as a function of angle. (<b>c</b>) The polarization component of <span class="html-italic">P</span><sub>2</sub> as a function of the angle of rotation <span class="html-italic">π</span> in the BaTiO<sub>3</sub> under tensile stress. (<b>d</b>) The magnitude of <span class="html-italic">P</span><sub>2</sub> at <span class="html-italic">π</span>/12 as a function of angle.</p> Full article ">Figure 4
<p>Adiabatic temperature induced by the <span class="html-italic">P</span><sub>2</sub> polarization component in the BaTiO<sub>3</sub> with the 180<sup>o</sup> domain wall as a function of angle under (<b>a</b>) compressive stress and (<b>b</b>) tensile stress.</p> Full article ">Figure 5
<p>Elastrocaloric adiabatic temperature change in BaTiO<sub>3</sub> with single domain structure as a function of temperature, (<b>a</b>) compressive stress and (<b>b</b>) tensile stress.</p> Full article ">
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