WO2024225690A1 - Dielectric composition with high-temperature stability - Google Patents

Abstract

A dielectric composition comprising a barium titanate-based base material major component and a minor component is disclosed. The dielectric composition comprises at least one minor component from among: a first minor component, which can be oxides or carbonates of Yb; a second minor component, which can be oxides including Ba and Zr; a third minor component, which can be oxides or carbonates of Y; a fourth minor component, which can be oxides or carbonates of Mg; a fifth minor component, which can be oxides or carbonates of V and Mn; and a sixth minor component, which can be oxides or carbonates of Si, wherein the at least one minor component can comprise the first minor component. The present invention satisfies X8R properties specified by EIA standards.

Description

Dielectric composition having high temperature stability

The present invention relates to a dielectric composition having high temperature stability, and more particularly, to a dielectric composition satisfying X8R characteristics.

Multilayer ceramic chip capacitors have high capacity and high reliability, but are relatively small in size, so they are widely used in fields such as automobiles and motors that require precision and stability.

There are requirements for various factors such as capacity, temperature stability, and voltage stability for multilayer ceramic capacitors. In particular, multilayer ceramic capacitors for electrical fields used in automobiles must not change their capacity (capacitance) even at high temperatures because they operate at high temperatures. In this regard, the Electronic Industries Association (EIA) of the United States stipulates that a multilayer ceramic capacitor satisfies the X8R characteristic when the change in capacitance at a temperature of -55 degrees Celsius to 150 degrees Celsius is within ±15% of the reference capacitance at 25 degrees Celsius.

The present invention provides a dielectric composition satisfying the X8R standard.

According to embodiments of the present invention, a dielectric composition includes a barium titanate-based matrix main component and a subcomponent, wherein the subcomponents include a first subcomponent including at least one selected from the group consisting of oxides and carbonates of Yb element, a second subcomponent including at least one selected from the group consisting of oxides including Ba and Zr, a third subcomponent including at least one selected from the group consisting of oxides and carbonates of Y element, a fourth subcomponent including at least one selected from oxides and carbonates of a valence-fixed acceptor element including Mg, a fifth subcomponent including at least one selected from the group consisting of oxides and carbonates of a valence-variable acceptor element including at least one selected from the group consisting of V, Mn, Cr, Fe, Ni, Co, Cu, and Zn, and a sixth subcomponent including at least one selected from the group consisting of oxides, carbonates, and glasses of Si element. It contains at least one subcomponent, and at least one subcomponent contains a first subcomponent, and the content of Yb element contained in the first subcomponent is 0.2 to 6 molar parts with respect to 100 molar parts of the main component of the parent material.

The dielectric composition of the present invention satisfies the X8R characteristics of the EIA standard.

FIG. 1 is a perspective view showing a multilayer ceramic capacitor according to an embodiment of the present invention.

FIG. 2 is a perspective view showing a plurality of electrode units of a laminated ceramic capacitor according to an embodiment of the present invention.

Hereinafter, in order to explain in detail the technical idea of the present invention to a degree that a person having ordinary skill in the art to which the present invention pertains can easily practice the present invention, the most preferred embodiment of the present invention will be described with reference to the accompanying drawings. First, when adding reference symbols to components in each drawing, it should be noted that the same components are given the same symbols as much as possible even if they are shown in different drawings. In addition, when explaining the present invention, if it is determined that a specific description of a related known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

The present invention relates to a dielectric composition, and electronic components including the dielectric composition include capacitors, inductors, piezoelectric elements, varistors, thermistors, and the like. Hereinafter, a multilayer ceramic capacitor (MLCC) will be described as an example of the dielectric composition and electronic components.

Multilayer Ceramic Capacitors

FIG. 1 is a perspective view showing a multilayer ceramic capacitor according to an embodiment of the present invention, and FIG. 2 is a transparent perspective view showing a plurality of electrode units of the multilayer ceramic capacitor according to an embodiment of the present invention.

Referring to FIG. 1, a multilayer ceramic capacitor according to an embodiment of the present invention is configured to include a dielectric (100), a first external electrode (220), and a second external electrode (240).

The dielectric (100) is configured as a rectangular solid having a top surface, a bottom surface, a first side surface, a second side surface opposite the first side surface, a third side surface, and a fourth side surface opposite the third side surface. As an example, the first side surface is the left side in the drawing, the second side surface is the right side in the drawing, the third side surface is the front side in the drawing, and the fourth side surface is the back side in the drawing.

The dielectric (100) may include a plurality of dielectric sheets. The plurality of dielectric sheets may be laminated. Each dielectric sheet may include a dielectric composition and may be formed by sintering the dielectric composition.

The first external electrode (220) is an electrode disposed on the first side of the dielectric (100). The first external electrode (220) may be formed to extend from the first side of the dielectric (100) to the upper surface, lower surface, third surface, and fourth surface of the dielectric (100). The second external electrode (240) is an electrode disposed on the second side of the dielectric (100). The second external electrode (240) may be formed to extend from the second side of the dielectric (100) to the upper surface, lower surface, third surface, and fourth surface of the dielectric (100). The first external electrode (220) and the second external electrode (240) may be formed to face each other at a predetermined distance from each other on the upper surface, lower surface, third surface, and fourth surface of the dielectric (100).

Referring to FIG. 2, the multilayer ceramic capacitor according to an embodiment of the present invention may further include a plurality of electrode units (300). At this time, the plurality of electrode units (300) are stacked to form a multilayer body, and the multilayer body is disposed inside the dielectric (100).

A plurality of electrode units (300) are stacked vertically in the drawing and placed inside the dielectric (100). Each electrode unit (300) includes a first electrode set (320) and a second electrode set (340), and the first electrode set (320) and the second electrode set (340) are alternately stacked.

The first electrode set (320) is composed of a plate-shaped conductor formed in a rectangular shape. The first electrode set (320) is arranged inside the dielectric (100) so as to be offset from the first side of the dielectric (100). The first end of the first electrode set (320) is connected to the first external electrode (220) at the first side of the dielectric (100).

The second electrode set (340) is composed of a plate-shaped conductor formed in a rectangular shape. The second electrode set (340) is arranged in the interior of the dielectric (100) so as to be offset from the second side of the dielectric (100). The first end of the second electrode set (340) is connected to the second external electrode (240) at the second side of the dielectric (100).

The first electrode set (320) and the second electrode set (340) are respectively distributed and arranged on two adjacent dielectric sheets among the dielectric sheets included in the dielectric (100). The first electrode set (320) and the second electrode set (340) may partially overlap each other with the dielectric sheet (110) therebetween.

Genetic composition and method for producing the same

Hereinafter, a dielectric composition and a method for manufacturing the same according to embodiments of the present invention will be described in detail. The dielectric composition can form the above-described dielectric (100). However, in order to avoid redundant description, any content that overlaps with the above-described content will be omitted.

The dielectric composition according to embodiments of the present invention may include a parent material main component including a rare earth element. The parent material main component is a barium titanate compound including Ba and Ti, and preferably, may be BaTiO ₃ . In addition, the dielectric composition according to embodiments of the present invention may additionally include a secondary component, and the secondary component may include the first secondary component to the sixth secondary component.

The dielectric composition according to embodiments of the present invention may include the auxiliary components of Table 1 per 100 mol of the base material BaTiO ₃ .

Part 1 Secondary component Third Component 4th Subcomponent 5th Subcomponent 6th Subcomponent Yb ₂ O ₃ BaZrO ₃ Y ₂ O ₃ MgCO ₃ V ₂ O ₅ MnO ₂ Ba _0.6 Ca _0.4 SiO ₃ 0.1-3.00 0.1-3.00 0-1.00 0.1-2.00 0.03-2.00 0.03-2.00 0.1-5.00

In order to implement the X8R temperature characteristics, dielectric compositions to which rare earth materials (such as Yb ₂ O ₃ ) that increase the Curie temperature have been added, or dielectric compositions using (Ba _1-x Ca _x )TiO ₃ , which is a base material modified by substitution instead of BaTiO ₃ , which is the main component of the base material, have been developed. Here, in the case of the dielectric composition to which the rare earth material Yb ₂ O ₃ has been added, it can satisfy the X8R standard that the temperature coefficient of capacitance (TCC) at 150℃ must change within the range of +15% to -15% as the Curie temperature increases. However, the dielectric composition to which Yb ₂ O ₃ has been added has a problem in that the sintering temperature increases as Yb ₂ O ₃ is added in order to implement the X8R temperature characteristics. If the sintering temperature becomes too high, the heat generation of the MLCC increases, which can damage the Ni internal electrodes, which can cause problems with the connectivity of the internal electrodes and complicate the process. In addition, among the base materials modified by substitution, etc., the widely known one is (Ba _1-x Ca _x )TiO ₃ , in which Ca is substituted in the Ba position. BCT, and when these BCTs are used alone or in mixtures in a dielectric composition, the change in capacity depending on the temperature is small, and at the same time, it can satisfy the X8R standard that the change should be within the range of +15% to -15% as the Curie temperature rises. However, a dielectric composition using BCT as a parent material has a disadvantage in that BCT synthesis is difficult. During BCT synthesis, Ca initially substitutes for Ba, but as the amount of Ca added increases, it gradually substitutes Ti instead of Ba, resulting in Ba(Ti _1-x Ca _x )O ₃ . In this case, the Curie temperature is rather lowered, so it is not suitable as an X8R composition. In addition, BCT has a lower permittivity than a composition to which Yb ₂ O ₃ is added, which is somewhat disadvantageous in implementing capacity.

To solve this problem, the dielectric composition according to embodiments of the present invention is characterized by providing _a dielectric composition _capable of suppressing an increase in sintering temperature while satisfying the criterion of X8R that should change within the range of 15 _% to -15% by adding Yb 2 O 3 and BaZrO ₃ to BaTiO 3. The dielectric composition according to embodiments of the present invention can suppress an increase in sintering temperature by reducing the amount of Yb ₂ O ₃ added as BaZrO ₃ is added to BaTiO ₃ , and at the same time, the overall permittivity is reduced due to BaZrO ₃ , and the change in permittivity according to temperature is reduced, thereby alleviating extreme changes in permittivity around the Curie temperature. That is, the dielectric composition according to embodiments of the present invention satisfies the X8R (-55°C to 150°C) characteristic specified in the EIA standard, thereby realizing a dielectric composition having excellent reliability and a multilayer ceramic capacitor including the same.

Hereinafter, each component of the dielectric composition according to embodiments of the present invention will be described in more detail.

Main ingredient of the mother material

The dielectric composition according to embodiments of the present invention may include a base material component including Ba and Ti. According to embodiments, the base material component is BaTiO ₃ .

The above-mentioned parent material main component may be included in a powder form and may be included in the dielectric composition. The average particle diameter of the parent material main component powder is not particularly limited, but may be 1000 nm or less. Preferably, the average particle diameter of the parent material main component powder may be 200 nm to 350 nm, and more preferably, 250 nm.

Part 1

The dielectric composition according to embodiments of the present invention may include at least one selected from the group consisting of oxides and carbonates of Yb element as the first auxiliary component. Alternatively, the first auxiliary component may include at least one selected from the group consisting of oxides and carbonates of at least one of Sc, Lu, and Tm, which are rare earth elements, instead of Yb element.

The first auxiliary component may be included in an amount of 0.2 to 6 mol parts per 100 mol parts of the parent material main component. The content of the first auxiliary component may be based on the content of the element included in the first auxiliary component, regardless of the addition form such as oxide or carbonate. For example, the total content of the elements included in the first auxiliary component may be 0.2 to 6 mol parts per 100 mol parts of the parent material main component. For example, when the first auxiliary component is Yb ₂ O ₃ , assuming that 2 mol parts of Yb ₂ O ₃ exist per 100 mol parts of BaTiO ₃ , 4 mol parts of Yb, a metal, are included in the first auxiliary component. Therefore, in this case, 4 mol parts of Yb are included per 100 mol parts of BaTiO ₃ .

The first subcomponent may have the effect of shifting the Curie temperature toward a higher temperature and improving the stability of capacitance according to temperature change. That is, the first subcomponent serves to prevent a decrease in the reliability of a multilayer ceramic capacitor formed with a dielectric composition according to embodiments of the present invention.

If the content of the Yb element included in the first subcomponent is less than 0.2 mol parts with respect to 100 mol parts of the main component of the parent material, the effect of improving the temperature coefficient of capacitance (TCC) at high temperature may not be significantly observed, and if the content of the Yb element included in the first subcomponent exceeds 6 mol parts with respect to 100 mol parts of the main component of the parent material, the characteristics related to sintering may deteriorate.

Secondary component

The dielectric composition according to embodiments of the present invention may include at least one selected from the group consisting of oxides containing Ba and Zr as a second auxiliary component. The second auxiliary component is preferably BaZrO ₃ or a mixture of BaO and ZrO ₂ , but is not limited thereto. In the case of BaZrO ₃ , the ratio of Ba and Zr is not particularly limited, and the molar ratio of Ba to Zr (Ba/Zr) may be 0.5 to 1.5, and preferably, 0.9 to 1.1.

When the second auxiliary component is added, the overall permittivity may decrease, and the permittivity change according to temperature may become flat. The second auxiliary component may be included in an amount of 0.1 to 3 mol parts per 100 mol parts of the main component of the base material. If the content of the second auxiliary component is less than 0.1 mol parts per 100 mol parts of the main component of the base material, the high-temperature TCC improvement effect may not be significantly exhibited, and if the content of the second auxiliary component exceeds 3 mol parts per 100 mol parts of the main component of the base material, the high-temperature withstand voltage characteristics may deteriorate.

Third Component

The dielectric composition according to embodiments of the present invention may include at least one selected from the group consisting of oxides and carbonates of Y element as a third auxiliary component. Alternatively, the third auxiliary component may include at least one selected from the group consisting of oxides and carbonates of at least one rare earth element, Dy, Ho, Tb, Gd, Eu, and Er, instead of Y element. The third auxiliary component is preferably Y ₂ O ₃ , which is an oxide of Y, but is not limited thereto.

The third auxiliary component can be contained in an amount of 2 mol parts or less with respect to 100 mol parts of the parent material main component. The content of the third auxiliary component can be based on the content of the element included in the third auxiliary component, regardless of the addition form such as oxide or carbonate. For example, the total content of the elements included in the third auxiliary component can be 2 mol parts or less with respect to 100 mol parts of the parent material main component. For example, when the third auxiliary component is Y ₂ O ₃ , assuming that Y ₂ O ₃ exists in an amount of 0.3 mol with respect to 100 mol parts of BaTiO ₃ , 0.6 mol parts of the metal Y included in the third auxiliary component are present. Therefore, in this case, 0.6 mol parts of Y are contained with respect to 100 mol parts of BaTiO ₃ .

The third auxiliary component can help improve the high-temperature TCC and prevent the deterioration of the reliability of the multilayer ceramic capacitor formed with the dielectric composition. If the content of the Y element included in the third auxiliary component exceeds 2 mol parts with respect to 100 mol parts of the main component of the parent material, this effect may be insufficient.

4th Subcomponent

The dielectric composition according to embodiments of the present invention may include at least one of an oxide and a carbonate of a fixed-valence acceptor element including Mg as a fourth auxiliary component.

The fourth auxiliary component may be included in an amount of 0.1 to 2 mol parts or less with respect to 100 mol parts of the parent material main component. The content of the fourth auxiliary component may be based on the content of the Mg element included in the fourth auxiliary component, regardless of the addition form such as oxide or carbonate. For example, the content of the Mg element included in the fourth auxiliary component may be 0.1 to 2 mol parts or less with respect to 100 mol parts of the parent material main component.

If the content of the fourth component is less than 0.1 mol parts or more than 2 mol parts with respect to 100 mol parts of the main component of the dielectric matrix, it is not desirable because there may be problems of low dielectric constant and low high-temperature withstand voltage characteristics.

5th Subcomponent

The dielectric composition according to embodiments of the present invention may include at least one selected from the group consisting of oxides and carbonates of atomic variable acceptor elements including at least one of V, Mn, Cr, Fe, Ni, Co, Cu, and Zn as a fifth auxiliary component. The fifth auxiliary component may include V ₂ O ₅ and It is preferable that at least one selected from the group consisting of MnO ₂ is present, but is not limited thereto.

The fifth auxiliary component may be included in an amount of 0.03 to 4 mol parts per 100 mol parts of the parent material main component. The content of the fifth auxiliary component may be based on the content of the elements included in the fifth auxiliary component, regardless of the addition form such as oxide or carbonate. For example, the total content of the elements included in the fifth auxiliary component may be 0.03 to 4 mol parts per 100 mol parts of the parent material main component.

The fifth auxiliary component can improve the high-temperature withstand voltage characteristics by improving the reduction resistance of the dielectric composition. If the content of the fifth auxiliary component is less than 0.03 molar parts, the high-temperature withstand voltage may be reduced, and if it exceeds 4 molar parts, the reliability of the dielectric magnetic composition may be reduced (e.g., a decrease in permittivity, etc.).

6th Subcomponent

The dielectric composition according to embodiments of the present invention may include, as a sixth auxiliary component, at least one selected from the group consisting of an oxide of Si element, a carbonate of Si element, and a glass including Si element. Preferably, the sixth auxiliary component may include a composite oxide represented by Ba _x Ca _1-x SiO ₃ (wherein x is 0.3 to 0.8). The x value of the composite oxide may be 0.3 to 0.8. Here, if the x value is too small, dielectric properties may be deteriorated due to a reaction between SiO ₂ and the main component BaTiO _3. On the other hand, if the x value is too large, the melting point may increase, which may deteriorate properties related to sintering.

The sixth auxiliary component may be included in an amount of 0.1 to 5 mol parts based on 100 mol parts of the above-mentioned parent material main component. If the content of the sixth auxiliary component is less than 0.1 mol parts, the rate of change in capacitance depending on the temperature may increase. On the other hand, if the content of the sixth auxiliary component exceeds 5 mol parts, problems such as a decrease in sinterability and density and the formation of secondary phases may occur, which is not preferable.

Hereinafter, the configuration and effects of the present invention will be described in more detail with specific examples and comparative examples, but these examples are only intended to make the present invention more clearly understood and are not intended to limit the scope of the present invention.

As a starting material for forming a dielectric layer, main component BaTiO ₃ powder was prepared, and Yb ₂ O ₃ , BaZrO ₃ , Y ₂ O ₃ , MgCO ₃ , V ₂ O ₅ , MnO ₂ , Ba _0.6 Ca _0.4 SiO ₃ were prepared as secondary components, respectively. Here, BaTiO ₃ mixed solid solution powder, which is a parent powder including the main component, was manufactured by applying a solid-state method as follows.

The starting materials are BaCO ₃ and TiO _2. These starting material powders were mixed in a ball mill and calcined in the range of 900 to 1000°C to prepare the main component matrix powder. After mixing the auxiliary component additive powders with the main component matrix powder in the ingredient ratios shown in Table 2, the raw material powders containing the main and auxiliary components were ball milled using zirconia balls as a mixing/dispersing medium, and ethanol/toluene, a dispersant, and a binder for a predetermined time (e.g., 20 hours).

The manufactured slurry was molded into a 10㎛ thick sheet using a doctor blade type coater, and Ni internal electrodes were printed on the molded sheet. The upper and lower covers were manufactured by laminating 25 layers of cover sheets, and 21 layers of printed active sheets were pressed and laminated to manufacture a press bar. The press bar was cut into chips of the size of 3225 (length X width X thickness 3.2 mm X 2.5 mm X 2.5 mm) using a cutter.

After the manufactured chip was calcined, it was fired at a temperature of 1150 to 1350°C for more than 1 hour in a reducing atmosphere (0.1% _H2 /99.9% _N2 , _H2O / _H2 / _N2 atmosphere), and then heat-treated by reoxidation in a nitrogen ( _N2 ) atmosphere at a temperature of 1000°C for more than 2 hours.

The external electrode was completed by performing a termination process and electrode firing using copper paste on the fired chip.

As for the laminated ceramic capacitor specimens completed as above, the capacity (dielectric constant), temperature-dependent change in electrostatic capacitance (TCC), and sintering temperature were measured and evaluated. In addition, room temperature insulation resistance, high temperature accelerated life, and loss factor were evaluated, but are not described.

The room temperature capacitance was measured using an LCR meter under the conditions of 1 kHz and AC 0.2 V/㎛. The permittivity of the multilayer ceramic capacitor (MLCC) chip was calculated from the capacitance, dielectric thickness, internal electrode area, and number of layers of the multilayer ceramic capacitor (MLCC) chip.

The change in capacitance according to temperature was measured in the temperature range of -55℃ to 150℃. In the temperature range, the capacitance change was measured under the conditions of 1kHz, 1Vrms using an LCR-meter. At this time, the change rate (%) of the capacitance at each temperature is measured compared to the capacitance at 25℃. In this specification, the change in capacitance at 150℃ is described. If the change rate of capacitance (Temperature Coefficient of Capacitance, TCC) at 150℃ is within ±15%, it is judged as good, and otherwise, it is judged as bad.

Table 2 below is a composition table of comparative examples, and Table 3 shows the characteristics of multilayer ceramic capacitor chips corresponding to the compositions specified in Table 2. Comparative examples 1 to 4 in Table 2 differ from the examples described later in that the second auxiliary component, BaZrO ₃ , was not added.

Number of moles of auxiliary ingredients per 100 moles of parent ingredient Part 1 Part 2 Part 3 Part 4 Part 5 Ingredients Part 6 Yb ₂ O ₃ BaZrO ₃ Y ₂ O ₃ MgCO ₃ V ₂ O ₅ MnO ₂ Ba _0.6 Ca _0.4 SiO ₃ Comparative Example 1 1.09 0 0 1.45 0.06 0.13 2.7 Comparative Example 2 2.18 0 0 1.45 0.06 0.13 2.7 Comparative Example 3 4.36 0 0 1.45 0.06 0.13 2.7 Comparative Example 4 5 0 0 1.45 0.06 0.13 2.7

permittivity High temperature TCC (150℃) Sintering temperature (℃) Attribute Judgment Comparative Example 1 1800 -19.8 1180 X Comparative Example 2 1500 -19.4 1200 X Comparative Example 3 1350 -13.0 1290 O Comparative Example 4 1350 -10.1 1310 O

Comparative Examples 1 to 4 in Table 2 represent samples in which the content of the third auxiliary component Y was fixed at 0 mol, the content of the fourth auxiliary component Mg was fixed at 1.45 mol, the content of the sum of the fifth auxiliary component (V, Mn) was fixed at 0.25 mol, and the content of the sixth auxiliary component was fixed at 2.7 mol, and the content of the first auxiliary component Yb was changed while the second auxiliary component was not added, and Table 3 represents the characteristics of samples corresponding to Comparative Examples 1 to 4 in Table 2. In the range where the content of the first auxiliary component Yb was 4.36 mol or less (Comparative Examples 1 to 2), the high-temperature TCC (150°C) exceeded ±15% and was vulnerable to temperature change. In the range where the content of the first auxiliary component Yb was 8.72 mol or more (Comparative Examples 3 to 4), the high-temperature TCC satisfied the X8R specification within ±15%. However, there is a problem that as the content of Yb increases, the rate of change in capacity decreases, but the sintering temperature increases, causing damage to the Ni internal electrode. According to comparative examples of the present invention, when the content of the first auxiliary component Yb is 10 moles or more, a sintering temperature of 1300°C or higher is required.

To solve this, the dielectric composition according to embodiments of the present invention is characterized by _{providing a} dielectric composition capable of suppressing an increase in sintering temperature while satisfying the criterion of X8R that must vary within a range of 15% to -15% by adding _Yb 2 O ₃ and BaZrO 3 to BaTiO 3.

Table 4 below is a composition table of examples, and Table 5 shows the characteristics of a multilayer ceramic capacitor chip corresponding to the composition specified in Table 4. In Table 4, Examples 2 to 6 differ from the comparative examples described above in that the second auxiliary component, BaZrO ₃ , is added.

Number of moles of auxiliary ingredients per 100 moles of parent ingredient Part 1 Part 2 Part 3 Part 4 Part 5 Ingredients Part 6 Yb ₂ O ₃ BaZrO ₃ Y ₂ O ₃ MgCO ₃ V ₂ O ₅ MnO ₂ Ba _0.6 Ca _0.4 SiO ₃ Example 1 2 0 0 1.45 0.06 0.13 2.7 Example 2 2 1 0 1.45 0.06 0.13 2.7 Example 3 2 1.5 0 1.45 0.06 0.13 2.7 Example 4 2 2 0 1.45 0.06 0.13 2.7 Example 5 2 3 0 1.45 0.06 0.13 2.7 Example 6 2 5 0 1.45 0.06 0.13 2.7

permittivity High temperature TCC (150℃) Sintering temperature (℃) Attribute Judgment Example 1 1500 -16.5 1200 X Example 2 1900 -11.3 1265 O Example 3 1800 -11.1 1250 O Example 4 1800 -12.3 1250 O Example 5 1900 -12.8 1245 O Example 6 1900 -19.7 1235 X

Examples 1 to 6 in Table 4 represent samples in which the content of the second auxiliary component was changed while the content of the first auxiliary component Yb was fixed at 2 mol, the content of the third auxiliary component Y was fixed at 0 mol, the content of the fourth auxiliary component Mg was fixed at 1.45 mol, the content of the sum of the fifth auxiliary component (V, Mn) was fixed at 0.25 mol, and the content of the sixth auxiliary component was fixed at 2.7 mol. Table 5 shows the characteristics of the samples corresponding to Examples 1 to 6 in Table 4. When the content of the second auxiliary component was 0 mol (Example 1), there was a problem that the high temperature TCC (150°C) exceeded ±15% and the sample was vulnerable to temperature changes. In addition, when the content of the second auxiliary component exceeded 3 mol (Example 6), there was a problem that the high temperature TCC (150°C) exceeded ±15% and the sample was vulnerable to temperature changes. In the range where the content of the second auxiliary component exceeds 0 mol (e.g., 0.1 mol or more) and is 3 mol or less (Examples 2 to 5), the high temperature TCC was found to be within ±15%, satisfying the X8R specification. Therefore, the appropriate content range of the second auxiliary component can be said to be 0.1 to 3 mol parts or less with respect to 100 mol parts of the main component of the parent material.

Examples 2 to 5 showed a high temperature TCC within ±15% when the second auxiliary component, BaZrO ₃ , was added, thereby satisfying the X8R standard, while having a sintering temperature within the range of 1245°C to 1265°C. That is, the sintering temperatures of Examples 2 to 5 were found to be lower than the sintering temperatures of 1290°C to 1310°C of Comparative Examples 3 to 4 described above. In this way, it can be seen that when the second auxiliary component, BaZrO ₃ , is added to the dielectric composition, the X8R standard can be satisfied even without increasing the content of the first auxiliary component, Yb ₂ O ₃ , and at the same time, since the content of Yb ₂ O ₃ can be lowered, there is an effect of suppressing an increase in the sintering temperature.

Number of moles of auxiliary ingredients per 100 moles of parent ingredient Part 1 Part 2 Part 3 Part 4 Part 5 Ingredients Part 6 Yb ₂ O ₃ BaZrO ₃ Y ₂ O ₃ MgCO ₃ V ₂ O ₅ MnO ₂ Ba _0.6 Ca _0.4 SiO ₃ Example 7 0 1.5 0 1.45 0.06 0.13 2.7 Example 8 0.1 1.5 0 1.45 0.06 0.13 2.7 Example 9 2 1.5 0 1.45 0.06 0.13 2.7 Example 10 3 1.5 0 1.45 0.06 0.13 2.7 Example 11 4 1.5 0 1.45 0.06 0.13 2.7

permittivity High temperature TCC (150℃) Sintering temperature (℃) Attribute Judgment Example 7 1900 -19.4 1200 X Example 8 1800 -11.5 1245 O Example 9 1500 -10.9 1250 O Example 10 1400 -12.3 1265 O Example 11 1350 -19.8 1280 X

Examples 7 to 11 in Table 6 represent samples in which the content of the first auxiliary ingredient was changed while the content of the second auxiliary ingredient was fixed at 1.5 mol, the content of the third auxiliary ingredient Y was fixed at 0 mol, the content of the fourth auxiliary ingredient Mg was fixed at 1.45 mol, the content of the sum of the fifth auxiliary ingredient (V, Mn) was fixed at 0.25 mol, and the content of the sixth auxiliary ingredient was fixed at 2.7 mol. Table 7 represents the characteristics of the samples corresponding to Examples 7 to 11 in Table 6. When the content of the first auxiliary ingredient Yb was 0 mol (Example 7), there was a problem that the high temperature TCC (150°C) exceeded ±15% and the samples were vulnerable to temperature changes. In addition, when the content of the first auxiliary ingredient Yb exceeded 6 mol (Example 11), there was a problem that the high temperature TCC (150°C) exceeded ±15% and the samples were vulnerable to temperature changes. In the range where the content of the first auxiliary component Yb exceeds 0 mol (e.g., 0.2 mol or more) and is 6 mol or less (Examples 8 to 10), the high temperature TCC was found to be within ±15%, satisfying the X8R specification, and the sintering temperature was also found to be lower than that of the comparative examples. Therefore, the appropriate content range of the first auxiliary component Yb can be said to be 0.2 to 6 mol parts in element ratio with respect to 100 mol parts of the main component of the base material.

Number of moles of auxiliary ingredients per 100 moles of parent ingredient Part 1 Part 2 Part 3 Part 4 Part 5 Ingredients Part 6 Yb ₂ O ₃ BaZrO ₃ Y ₂ O ₃ MgCO ₃ V ₂ O ₅ MnO ₂ Ba _0.6 Ca _0.4 SiO ₃ Example 12 2 1.5 0.5 1.45 0.06 0.13 2.7 Example 13 2 1.5 1 1.45 0.06 0.13 2.7 Example 14 2 1.5 2 1.45 0.06 0.13 2.7

permittivity High temperature TCC (150℃) Sintering temperature (℃) Attribute Judgment Example 12 1800 -11.0 1245 O Example 13 1800 -10.9 1250 O Example 14 1500 -19.1 1300 X

Examples 12 to 14 in Table 8 represent samples in which the content of the third auxiliary component Y was changed while the content of the first auxiliary component Yb was fixed at 2 mol, the content of the second auxiliary component was fixed at 1.5 mol, the content of the fourth auxiliary component Mg was fixed at 1.45 mol, the content of the sum of the fifth auxiliary component (V, Mn) was fixed at 0.25 mol, and the content of the sixth auxiliary component was fixed at 2.7 mol. Table 9 represents the characteristics of the samples corresponding to Examples 12 to 14 in Table 8. When the content of the third auxiliary component Y exceeded 2 mol (Example 14), the high-temperature TCC (150°C) exceeded ±15%, which was a problem in that it was vulnerable to temperature changes. In the range where the content of the third auxiliary component Y was 2 mol or less (Examples 12 to 13), the high-temperature TCC was found to be within ±15%, satisfying the X8R specification, and the sintering temperature was also found to be relatively low. Therefore, the appropriate content range of the third auxiliary component Y can be said to be 2 molar parts or less in element ratio with respect to 100 molar parts of the main component of the parent material.

The present invention is not limited by the above-described embodiments and the attached drawings, but is limited by the appended claims. Accordingly, it will be apparent to those skilled in the art that various substitutions, modifications, and changes are possible within the scope that does not depart from the technical idea of the present invention described in the claims, and this also falls within the technical idea described in the appended claims.

Claims (9)

In a dielectric composition comprising a main component and a secondary component of a barium titanate-based material, The above auxiliary ingredients are, A first auxiliary component comprising at least one selected from the group consisting of oxides and carbonates of the element Yb; A second component comprising at least one selected from the group consisting of oxides comprising Ba and Zr; A third component comprising at least one selected from the group consisting of oxides and carbonates of element Y; A fourth minor component comprising at least one of an oxide and a carbonate of an atomic fixed acceptor element comprising Mg; A fifth secondary component comprising at least one selected from the group consisting of oxides and carbonates of variable acceptor elements, wherein the atomic number comprises at least one of V, Mn, Cr, Fe, Ni, Co, Cu, and Zn; and A sixth auxiliary component comprising at least one selected from the group consisting of oxides, carbonates and glasses of the Si element; comprising at least one auxiliary component; wherein said at least one subcomponent comprises said first subcomponent, The content of the Yb element included in the first auxiliary component is 0.2 to 6 mol parts per 100 mol parts of the main component of the parent material. Genetic composition. In the first paragraph, wherein said at least one subcomponent further comprises said second subcomponent, The content of the second auxiliary component is 0.1 to 3 mol parts per 100 mol parts of the main component of the parent material. Genetic composition. In the first paragraph, wherein said at least one subcomponent further comprises said third subcomponent, The content of element Y included in the third auxiliary component is 2 mol parts or less per 100 mol parts of the main component of the parent material. Genetic composition. In the first paragraph, wherein said at least one subcomponent further comprises said fourth subcomponent, The content of the Mg element included in the fourth auxiliary component is 0.1 to 2 mol parts per 100 mol parts of the main component of the parent material. Genetic composition. In the first paragraph, wherein said at least one subcomponent further comprises said fifth subcomponent, The content of the atomic variable acceptor element included in the fifth auxiliary component is 0.03 to 4 mol parts per 100 mol parts of the parent material main component. Genetic composition. In the first paragraph, wherein said at least one subcomponent further comprises said sixth subcomponent, The content of the above sixth auxiliary component is 0.1 to 5 mol parts per 100 mol parts of the main component of the above mother material. Genetic composition. In Article 6, The sixth auxiliary component comprises a complex oxide represented by Ba _x Ca _1-x SiO ₃ (wherein x is 0.3 to 0.8). Genetic composition. In a method for producing a genetic composition, Step for preparing the main component of barium titanate-based matrix; A step of preparing at least one subcomponent including the first subcomponent comprising at least one selected from the group consisting of oxides and carbonates of Yb element, a second subcomponent comprising at least one selected from the group consisting of oxides including Ba and Zr, a third subcomponent comprising at least one selected from the group consisting of oxides and carbonates of Y element, a fourth subcomponent comprising at least one selected from oxides and carbonates of a valence-fixed acceptor element including Mg, a fifth subcomponent comprising at least one selected from the group consisting of oxides and carbonates of valence-variable acceptor elements including at least one selected from among V, Mn, Cr, Fe, Ni, Co, Cu, and Zn, and a sixth subcomponent comprising at least one selected from the group consisting of oxides, carbonates, and glasses of Si element; A step of preparing a mixture comprising the above main component and at least one auxiliary component; and Comprising a step of calcining the above mixture, The content of the Yb element included in the first auxiliary component is 0.2 to 6 mol parts per 100 mol parts of the main component of the parent material. A method for producing a genetic composition. In Article 8, The sintering temperature of the above mixture is 1150℃ or higher. A method for producing a genetic composition.

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