WO2024214626A1

WO2024214626A1 - Heat treatment device and heat treatment method

Info

Publication number: WO2024214626A1
Application number: PCT/JP2024/013902
Authority: WO
Inventors: 耕祐久田; 啓聡栗島; 俊樹苗木
Original assignee: 東京エレクトロン株式会社
Priority date: 2023-04-11
Filing date: 2024-04-04
Publication date: 2024-10-17

Abstract

This heat treatment device comprises: a heating unit that supports a substrate and heats the substrate at a high temperature of 500°C or higher; a chamber which includes a lid part that covers the heating unit to form a treatment space on the heating unit, and a surface of which on the side of the heat treatment space is formed by a metal-containing material; and an exhaust unit that exhausts the treatment space, wherein the chamber has a gas supply unit that supplies a low humidity gas having a lower humidity than the atmosphere to the treatment space.

Description

Heat treatment apparatus and heat treatment method

This disclosure relates to a heat treatment device and a heat treatment method.

The heat treatment unit disclosed in Patent Document 1 includes a heating section that supports and heats a substrate on which a coating is formed, a chamber having a peripheral wall that surrounds the heating section, and a lid that covers the heating section with a gap between the peripheral wall and the lid to form a treatment space above the heating section. The heat treatment unit also includes a housing that houses the heating section and the chamber, a first gas supply section that supplies a first gas having an oxygen concentration lower than the atmosphere to the treatment space, and an exhaust section that exhausts the treatment space at an exhaust rate greater than the supply rate of the first gas. The heat treatment unit also includes a second gas supply section that supplies a second gas having an oxygen concentration lower than the atmosphere to the gap between the peripheral wall and the lid, and a third gas supply section that supplies a third gas having an oxygen concentration lower than the atmosphere to the outside of the chamber within the housing.

JP 2022-7534 A

The technology disclosed herein prevents the generation of gas containing the metal that constitutes a component from the surface of the component exposed to high temperatures in a heat treatment device.

One aspect of the present disclosure is a chamber including a heating unit that supports a substrate and heats it at a high temperature of 500° C. or more, a lid unit that covers the heating unit to form a processing space above the heating unit and has a surface facing the processing space made of a metal-containing material, and an exhaust unit that exhausts the processing space,
The chamber is a heat treatment apparatus having a gas supply unit that supplies a low-humidity gas having a humidity lower than that of the atmosphere to the treatment space.

According to the present disclosure, it is possible to suppress the generation of gas containing the metal that constitutes a component from the surface of the component exposed to high temperatures in a heat treatment device.

1 is an explanatory diagram showing an outline of an internal configuration of a coating and developing system as a substrate processing system including a heat treatment apparatus according to an embodiment of the present invention; 1 is a diagram showing an outline of the internal configuration of a coating and developing system from the front side; 2 is a diagram showing an outline of the internal configuration of the coating and developing system on the rear side. FIG. FIG. 1 is a vertical cross-sectional view showing a schematic configuration of a high-temperature heat treatment apparatus. FIG. 2 is a vertical cross-sectional view showing a schematic outline of the configuration within a heating region. 4 is a flowchart for explaining an example of a process performed by the coating and developing system. FIG. 2 is an explanatory diagram showing the operation of the high-temperature heat treatment apparatus. FIG. 2 is an explanatory diagram showing the operation of the high-temperature heat treatment apparatus. FIG. 2 is an explanatory diagram showing the operation of the high-temperature heat treatment apparatus. FIG. 2 is an explanatory diagram showing the operation of the high-temperature heat treatment apparatus. FIG.

In the manufacturing process of semiconductor devices, etc., a photolithography process is performed on a substrate such as a semiconductor wafer (hereafter referred to as "wafer"), and a resist pattern is formed on the substrate. Then, using this resist pattern as a mask, the layer to be processed is etched, and the desired pattern is formed in the layer to be processed.

Incidentally, with the miniaturization of semiconductor devices, etching with a high aspect ratio is required when etching the layers to be processed. One known technique for achieving this is to form a hard mask layer with higher etching resistance than a resist film underneath the resist film, and then etch using the hard mask layer as a mask. In addition, with the emergence of 3D NAND devices, there is a demand for hard mask layers with higher etching resistance.

The hard mask layer may be formed by a CVD method, or may be formed by applying a mask layer forming treatment liquid and heating, which has a higher throughput, and in the latter case, may require heating the substrate at a high temperature of 500° C. or more.
However, when heated at a high temperature of 500° C. or higher, gas containing the metal constituting the member may be generated from the surface of the member exposed to the high temperature in the heat treatment device used for heating. Specifically, for example, gas containing chromium in stainless steel, which is the material of the chamber, may be generated from the chamber that supports the substrate and forms a processing space on the hot plate. The gas containing the metal (specifically, chromium) may adversely affect the substrate and the device related to the substrate.

In view of this, the technology disclosed herein suppresses the generation of gas containing metals constituting a component from the surface of the component exposed to high temperatures in a heat treatment apparatus.
Regarding this point, the inventors have conducted intensive research and found that when heating at a high temperature of 500°C or higher, if the gas supplied to the processing space is changed from a temperature and humidity adjusting gas containing moisture to nitrogen gas or dry air, which has a lower humidity than the atmosphere, the amount of chromium detected is significantly reduced. . Specifically, the amount of chromium detected on the front surface of the wafer W was about 8.5×10 ¹⁰ atoms/cm ² in the case of a temperature and humidity adjusting gas, but about 0.1×10 ¹⁰ atoms/cm ² in the case of nitrogen gas or dry air. The reason for this phenomenon is considered to be as follows. That is, when heating at a high temperature of 500°C or higher, if a gas containing moisture is supplied to the processing space, a chromium oxide (Cr ₂ O ₃ ) film formed on the surface of the chamber by natural oxidation of stainless steel reacts with moisture (water vapor) and the like to generate a gas containing chromium (specifically, CrO ₂ (OH) ₂ ). On the other hand, if the gas supplied to the processing space does not contain moisture, the above-mentioned reaction does not occur, and the generation of gas containing chromium is suppressed.
The following embodiments are based on the above findings.

The heat treatment apparatus and heat treatment method according to this embodiment will be described below with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configuration are given the same reference numerals to avoid redundant description.

<Coating and developing system>
Fig. 1 is an explanatory diagram showing an outline of the internal configuration of a coating and developing system as a substrate processing system including a heat treatment apparatus according to the present embodiment. Fig. 2 and Fig. 3 are diagrams showing an outline of the internal configuration of the coating and developing system from the front side and the rear side, respectively.

As shown in Figures 1 to 3, the coating and developing system 1 has a cassette station 2 where cassettes C, which are containers capable of housing multiple wafers W, are loaded and unloaded, and a processing station 3 equipped with multiple processing devices that perform predetermined processes such as resist coating. The coating and developing system 1 has a configuration in which the cassette station 2, the processing station 3, and an interface station 5 that transfers the wafer W between them and an exposure device 4 adjacent to the processing station 3 are integrally connected.

The cassette station 2 is divided, for example, into a cassette loading/unloading section 10 and a wafer transport section 11. For example, the cassette loading/unloading section 10 is provided at the end of the coating and developing system 1 on the negative Y-direction side (left direction in FIG. 1). The cassette loading/unloading section 10 is provided with a cassette mounting table 12. A plurality of, for example, four mounting plates 13 are provided on the cassette mounting table 12. The mounting plates 13 are arranged in a row in the horizontal X-direction (up and down direction in FIG. 1). The cassettes C can be placed on these mounting plates 13 when they are loaded or unloaded from the outside of the coating and developing system 1.

The wafer transport section 11 is provided with a transport device 20 that transports the wafer W. The transport device 20 is configured to be freely movable on a transport path 21 that extends in the X direction. The transport device 20 is also freely movable in the vertical direction and around the vertical axis (θ direction), and can transport the wafer W between the cassette C on each mounting plate 13 and a transfer device in the third block G3 of the processing station 3, which will be described later.

The processing station 3 is provided with multiple blocks, for example, four blocks G1, G2, G3, and G4, each equipped with various devices. For example, the first block G1 is provided on the front side of the processing station 3 (the negative X-direction side in FIG. 1), and the second block G2 is provided on the rear side of the processing station 3 (the positive X-direction side in FIG. 1). Furthermore, the third block G3 is provided on the cassette station 2 side of the processing station 3 (the negative Y-direction side in FIG. 1), and the fourth block G4 is provided on the interface station 5 side of the processing station 3 (the positive Y-direction side in FIG. 1).

In the first block G1, as shown in FIG. 2, a plurality of liquid processing devices, for example, a development processing device 30, a hard mask film forming device 31, and a resist coating device 32, are arranged in this order from the bottom. The development processing device 30 performs a development process on the wafer W. Specifically, the development processing device 30 develops the resist film on the wafer W that has been subjected to a post-exposure bake process (PEB process). The hard mask film forming device 31 performs a hard mask formation process in which a process liquid for forming a hard mask film is applied onto the wafer W to form a hard mask film. The hard mask film is, for example, a zirconium oxide film. The resist coating device 32 performs a resist coating process in which a resist liquid is applied onto the wafer W to form a resist film.

For example, three developing treatment devices 30, three hard mask film forming devices 31, and three resist coating devices 32 are arranged horizontally. The number and arrangement of the developing treatment devices 30, the hard mask film forming devices 31, and the resist coating devices 32 can be selected arbitrarily.

In the development processing device 30, the hard mask film forming device 31, and the resist coating device 32, a predetermined processing liquid is applied onto the wafer W, for example, by a spin coating method. In the spin coating method, for example, the processing liquid is discharged onto the wafer W from a discharge nozzle, and the wafer W is rotated to diffuse the processing liquid onto the surface of the wafer W.

For example, in the second block G2, as shown in FIG. 3, a heat treatment device 40 for performing heat treatment on the wafer W and a high-temperature heat treatment device 41 for performing heat treatment on the wafer W including heat treatment at a high temperature of 500° C. or more are arranged vertically and horizontally. The number and arrangement of the heat treatment devices 40 and high-temperature heat treatment devices 41 can be selected as desired. The heat treatment device 40 performs a hard mask pre-bake process for heating the wafer W after the hard mask formation process and before the heat treatment by the high-temperature heat treatment device. The heat treatment device 40 also performs a pre-baking process (hereinafter referred to as "PAB process") for heating the wafer W after the resist coating process, a PEB process for heating the wafer W after the exposure process, and a post-baking process (hereinafter referred to as "POST process") for heating the wafer W after the development process. The high-temperature heat treatment device 41 also performs a high-temperature heat treatment for heating the wafer W after the hard mask pre-bake process at a high temperature of 500° C. or more.

For example, in the third block G3,

multiple transfer devices

50, 51, 52, 53, 54, 55, and 56 are provided in order from the bottom. Also, in the fourth block G4,

multiple transfer devices

60, 61, and 62 are provided in order from the bottom.

As shown in FIG. 1, a wafer transport area D is formed in the area surrounded by the first block G1 to the fourth block G4. In the wafer transport area D, a transport device 70 is disposed, which serves as a substrate transport device for transporting a wafer W, for example.

The transfer device 70 has a transfer arm 70a that can move freely, for example, in the Y direction, the θ direction, and the vertical direction. The transfer device 70 moves the transfer arm 70a holding the wafer W within the wafer transfer area D, and can transfer the wafer W to a predetermined device in the surrounding first block G1, second block G2, third block G3, and fourth block G4. For example, multiple transfer devices 70 are arranged vertically as shown in Figure 3, and can transfer the wafer W to a predetermined device at approximately the same height in each of the blocks G1 to G4.

In addition, a shuttle transport device 80 is provided in the wafer transport area D to transport the wafer W linearly between the third block G3 and the fourth block G4.

The shuttle transport device 80 moves the supported wafer W linearly in the Y direction, and can transport the wafer W between the transfer device 52 of the third block G3 and the transfer device 62 of the fourth block G4, which are at approximately the same height.

As shown in FIG. 1, a transfer device 90 is provided on the positive X-direction side of the third block G3. The transfer device 90 has a transfer arm 90a that can move, for example, in the θ direction and in the vertical direction. The transfer device 90 moves the transfer arm 90a holding the wafer W up and down, and can transfer the wafer W to each transfer device in the third block G3.

The interface station 5 is provided with a transfer device 100 and a delivery device 101. The transfer device 100 has a transfer arm 100a that can move freely, for example, in the θ direction and in the vertical direction. The transfer device 100 holds a wafer W on the transfer arm 100a and can transfer the wafer W between each delivery device in the fourth block G4, the delivery device 101, and the exposure device 4.

The coating and developing system 1 described above is provided with at least one control unit 200 as shown in FIG. 1. The control unit 200 processes computer-executable instructions that cause the coating and developing system 1 to perform the various processes described in this disclosure. The control unit 200 may be configured to control each element of the coating and developing system 1 to perform the various processes described herein. In one embodiment, a part or all of the control unit 200 may be included in the coating and developing system 1. The control unit 200 may include a processing unit, a storage unit, and a communication interface. The control unit 200 is realized, for example, by a computer. The processing unit may be configured to read a program that provides logic or routines that enable various control operations to be performed from the storage unit, and to perform various control operations by executing the read program. This program may be stored in the storage unit in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit, and is read from the storage unit by the processing unit and executed. The medium may be various computer-readable storage media H, or may be a communication line connected to the communication interface. The storage medium H may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the coating and developing system 1 via a communication line such as a LAN (Local Area Network).

<High-temperature heat treatment device 41>
Next, a description will be given of the high-temperature heat treatment device 41. Fig. 4 is a vertical cross-sectional view showing a schematic outline of the configuration of the high-temperature heat treatment device 41. Fig. 5 is a vertical cross-sectional view showing a schematic outline of the configuration within a heating region 310 described below.

As shown in FIG. 4, the high-temperature heat treatment device 41 has a processing vessel 300 as a housing whose interior can be closed. A loading/unloading port 301 for the wafer W is formed in the side wall of the processing vessel 300 on the wafer transfer area D side, and an opening/closing shutter 302 is provided at the loading/unloading port 301.

The interior of the processing vessel 300 is divided into an upper space S1 and a lower space S2 by a partition wall 303. The upper space S1 is provided with a heating area 310 for heating the wafer W and a cooling area 311 for cooling the wafer W. The heating area 310 and the cooling area 311 are arranged side by side in the depth direction of the apparatus (Y direction in the figure), and the cooling area 311 is located closer to the load/unload port 301 than the heating area 310.

As shown in FIG. 5, the heating region 310 is provided with a hot plate 320 as a heating section that supports the wafer W and heats it at a high temperature of 500° C. or more. The hot plate 320 has a thick, circular plate-shaped section 321. The diameter of the plate-shaped section 321 is larger than the diameter of the wafer W. The plate-shaped section 321 has a built-in heater 322, for example. The plate-shaped section 321 is made of, for example, silicon carbide, which has high thermal conductivity. The temperature of the hot plate 320 (specifically, the temperature of the plate-shaped section 321) is controlled by, for example, the control section 200, and heating is performed by the heater 322 so that the wafer W placed on the hot plate 320 or the plate-shaped section 321 of the hot plate 320 reaches a predetermined temperature of 500° C. or more.

Furthermore, the heat plate 320 is supported on the supporting bottom wall 324 via, for example, a heat shield plate 323. Both the heat shield plate 323 and the supporting bottom wall 324 are formed in a disk shape. The diameter of the heat shield plate 323 is approximately the same as the diameter of the heat plate 320. On the other hand, the diameter of the supporting bottom wall 324 is larger than the diameter of the heat plate 320. The supporting bottom wall 324 is disposed above the partition wall 303 with a gap therebetween, as shown in FIG. 4. The supporting bottom wall 324 may be fixed to the partition wall 303 via a fixing member (not shown).

The hot plate 320 is provided with a plurality of (e.g., three) lift pins 330 for supporting and lifting the wafer W from below. The plurality of lift pins 330 are raised and lowered by a lift drive unit 331 having a drive source such as a motor. Each of the lift pins 330 is inserted into a corresponding through hole 332 and can pass through the through hole 332 and protrude from the upper surface of the hot plate 320. Each of the through holes 332 is formed to pass through, for example, the hot plate 320, the heat shield plate 323, the support bottom wall 324, and the partition wall 303 in the vertical direction.
The lifting and lowering drive unit 331 can lift and lower the wafer W by lifting and lowering the plurality of lifting pins 330 supporting the wafer W. The lifting and lowering drive unit 331 is provided in, for example, the lower space S2.

Furthermore, in order to exhaust the processing space S3 described below through the through holes 332, an exhaust device 334 such as a vacuum pump is connected to each of the through holes 332 via an exhaust pipe 333. The exhaust pipe 333 is provided with an exhaust device group 335 having a valve or the like that switches the exhaust through the through holes 332 (hereinafter referred to as pin exhaust) on and off. The exhaust device 334 and the exhaust device group 335 are controlled by the control unit 200.

The heating region 310 is also provided with a chamber 340. The chamber 340 has a peripheral wall portion 341 and an upper chamber 342 serving as a lid portion.

As shown in FIG. 5, the peripheral wall portion 341 is arranged with a gap g1 between it and the heat plate 320 (specifically, between the heat plate 320 and the side surface of the heat shield plate 323). This peripheral wall portion 341 is formed to extend upward from the peripheral edge of the support bottom wall 324, and is formed in a circular ring shape in a plan view. The inner peripheral surface of the peripheral wall portion 341 faces the outer peripheral surfaces of the heat plate 320 and the heat shield plate 323. The gap g1 is formed in a circular ring shape in a plan view.

The peripheral wall portion 341 is also provided with a peripheral exhaust section 350 that exhausts the processing space S3 described below through the gap g1. The peripheral exhaust section 350 has a plurality of exhaust holes 351 that open into the gap g1. The plurality of exhaust holes 351 are arranged at a predetermined interval on the inner peripheral surface of the peripheral wall portion 341 along the circumferential direction of the peripheral wall portion 341. The peripheral exhaust section 350 further has an exhaust path 352 formed inside the peripheral wall portion 341. The exhaust path 352 is connected to the end of the exhaust hole 351 on the opposite side to the gap g1. The exhaust path 352 is formed in a circular ring shape in a plan view so as to extend along the peripheral wall portion 341. The exhaust path 352 is also connected to an exhaust device 354, such as a vacuum pump, via an exhaust pipe 353. The exhaust pipe 353 is provided with an exhaust device group 355 having a valve or the like that switches the exhaust by the peripheral exhaust section 350 on and off. The exhaust device 354 and the exhaust equipment group 355 are controlled by the control unit 200.

The upper chamber 342 covers the heat plate 320 to form a processing space S3 above the heat plate 320. The upper chamber 342 is configured to be movable up and down by a lifting drive unit (not shown). The upper chamber 342 is lowered until it is close to the peripheral wall portion 341, thereby forming the processing space S3.

The upper chamber 342 also has, for example, a top wall portion 343 and a side wall portion 344 .
The top wall portion 343 is formed in a disk shape having a diameter approximately equal to that of the supporting bottom wall 324 , and is disposed so as to face the upper surface of the hot plate 320 .
The side wall portion 344 is formed in a cylindrical shape so as to extend downward from the outer edge of the top wall portion 343 , and is disposed so that its lower end surface faces the upper end surface of the peripheral wall portion 341 .

With the upper chamber 342 in close proximity to the peripheral wall portion 341, a gap g2 is formed between the upper end surface of the side wall portion 348 and the lower end surface of the peripheral wall portion 341. The gap g2 is formed in an annular shape so as to surround the periphery of the processing space S3.
The upper chamber 342 is configured to be heated. For example, a heater (not shown) is built into the top wall 343, and the heater is controlled by the control unit 200 to adjust the upper surface of the top wall 343 to a predetermined temperature lower than that of the hot plate 320 (for example, 350° C. to 400° C.).

This upper chamber 342 is made of a metal material, specifically stainless steel, and more specifically SUS304. Therefore, the surface of the upper chamber 342 facing the processing space S3 is made of a metal-containing material, specifically a chromium oxide film formed by the natural oxidation of stainless steel.

The chamber 340 also has a shower head 360 as a gas supply unit. Specifically, the upper chamber 342 has a shower head 360.

The shower head 360 supplies low-humidity gas, which has a humidity lower than that of the atmosphere, to the processing space S3. The low-humidity gas is, for example, dry air or nitrogen gas. The humidity of the low-humidity gas is adjusted so that the humidity in the processing space S3 is, for example, 0.01% or less. The shower head 360 constitutes, for example, at least a part of the ceiling wall portion 343.

The shower head 360 has a plurality of gas discharge holes 361 formed on its underside. The plurality of gas discharge holes 361 are uniformly arranged on the underside of the shower head 360 except for the exhaust port 371 described later. A gas supply pipe 362 is connected to the shower head 360. A gas supply source 363 that supplies low-humidity gas to the shower head 360 is connected to the gas supply pipe 362. The gas supply pipe 362 is provided with a supply device group 364 including a valve that switches the supply of low-humidity gas to the shower head 360 on and off, a flow rate control valve, and the like. The supply device group 364 is controlled by the control unit 200. The low-humidity gas supplied to the shower head 360 from the gas supply source 363 via the gas supply pipe 362 is discharged downward from the gas discharge hole 361.

Furthermore, the shower head 360 is provided with a central exhaust section 370 and a peripheral exhaust section 380. The central exhaust section 370 and the peripheral exhaust section 380, together with the aforementioned peripheral exhaust section 350, constitute an exhaust section that exhausts the processing space S3.

The central exhaust section 370 exhausts the processing space S3 from above the center of the heat plate 320. The central exhaust section 370 has an exhaust port 371. The exhaust port 371 is provided in the center of the underside of the shower head 360 and opens downward. The central exhaust section 370 exhausts the processing space S3 via this exhaust port 371.

The central exhaust section 370 also has a central exhaust path 372 formed to extend upward from the exhaust port 371. An exhaust device 374 such as a vacuum pump is connected to the central exhaust path 372 via an exhaust pipe 373. An exhaust device group 375 having a valve or the like for switching the exhaust by the central exhaust section 370 on and off is provided on the exhaust pipe 373. The exhaust device 374 and the exhaust device group 375 are controlled by the control unit 200.

The peripheral exhaust section 380 exhausts the processing space S3 from above the outer periphery of the heat plate 320 (specifically, for example, from above a portion slightly outside the peripheral edge of the wafer W). The peripheral exhaust section 380 has an exhaust port 381. The exhaust port 381 opens downward from the underside of the ceiling wall section 343 so as to surround the outer periphery of the shower head 360. The exhaust port 381 may be a plurality of exhaust holes arranged along the outer periphery of the shower head 360. The peripheral exhaust section 380 exhausts the processing space S3 via this exhaust port 381.

The outer peripheral exhaust section 380 also has an outer peripheral exhaust path 382 that leads to the exhaust port 381. An exhaust device 384 such as a vacuum pump is connected to the outer peripheral exhaust path 382 via an exhaust pipe 383. An exhaust device group 385 having a valve or the like for switching exhaust ON/OFF is provided on the exhaust pipe 383. The exhaust device 384 and the exhaust device group 385 are controlled by the control unit 200.

As shown in FIG. 4, the cooling region 311 is provided with a cooling plate 400 as a cooling unit that supports and cools the wafer W. The cooling plate 400 is formed, for example, in the shape of a thick disk. The cooling plate 400 has built-in temperature adjustment members (not shown), such as cooling water or a Peltier element. The temperature of the cooling plate 400 is controlled, for example, by the control unit 200, and the wafer W placed on the cooling plate 400 is cooled to a predetermined temperature.

The cooling plate 400 is provided with a plurality of (e.g., three) lift pins 410 for supporting and lifting the wafer W from below. The plurality of lift pins 410 are raised and lowered by a lift driver 411 having a drive source such as a motor. Each of the lift pins 410 is inserted into a through hole (not shown) formed in the cooling plate 400 and can protrude from the upper surface of the cooling plate 400 through the through hole.
The lifting and lowering drive unit 411 can lift and lower the wafer W by lifting and lowering the plurality of lifting pins 410 supporting the wafer W. The lifting and lowering drive unit 411 is provided in, for example, the cooling region 311 in the upper space S1.

Furthermore, a transport mechanism 420 is provided within the processing vessel 300 to transport the wafer W between the heating region 310 and the cooling region 311. The transport mechanism 420 has a holding arm 421 and a drive unit 422. The holding arm 421 is provided in the space above the heating plate 320 and the cooling plate 400 in the upper space S1, and holds the wafer W horizontally. The holding arm 421 is configured to be able to transfer the wafer W between the multiple lift pins 330 or the multiple lift pins 410. The drive unit 422 has a drive source such as a motor, and moves the holding arm 421 along the device depth direction (Y direction in the figure).

Furthermore, within the processing vessel 300 there is a gas supply unit 430 that supplies a low-humidity gas to a space outside the chamber 340 within the processing vessel 300 .
The gas supply unit 430 has a shower head 431 as a cooling region gas supply unit, and a shower header 432 as a heating region gas supply unit. The types of low-humidity gas supplied from the shower head 360, the shower head 431, and the shower header 432 may be the same or different. In the following description, it is assumed that the types of low-humidity gas supplied from the shower head 360, the shower head 431, and the shower header 432 are the same.

The shower head 431 supplies low-humidity gas to the cooling region 311. The shower head 431 is provided in the cooling region 311, specifically, above the cooling plate 400 in the cooling region 311. A plurality of gas discharge holes 433 are formed on the lower surface of the shower head 431. The plurality of gas discharge holes 433 are uniformly arranged on the lower surface of the shower head 431. A gas supply pipe 434 is connected to the shower head 431. A gas supply source 435 that supplies low-humidity gas to the shower head 431 is connected to the gas supply pipe 434. The gas supply pipe 434 is provided with a supply device group 436 including a valve that switches ON/OFF of the supply of low-humidity gas to the shower head 431 and a flow rate control valve. The supply device group 436 is controlled by the control unit 200. The low-humidity gas supplied to the shower head 431 from the gas supply source 435 via the gas supply pipe 434 is discharged downward from the gas discharge hole 433.

The shower header 432 supplies low-humidity gas to the heating area 310. The shower header 432 is provided in the heating area 310. Specifically, the shower header 432 is provided between the hot plate 320 and the cooling plate 400 in the device depth direction (Y direction in the figure) in the heating area in a plan view. The shower header 432 is also provided above the upper chamber 342.

Furthermore, the shower header 432 is formed in a rod shape so as to extend in a direction perpendicular to the device depth direction (Y direction in the figure) and the vertical direction. The shower header 432 is provided with a plurality of gas discharge holes 437. The plurality of gas discharge holes 437 are formed, for example, on the surface of the shower header 432 opposite the cooling region 311 side. The plurality of gas discharge holes 437 are also arranged at predetermined intervals along the extension direction of the shower header 432.

Furthermore, a gas supply pipe 438 is connected to the shower header 432. Further, a gas supply source 439 that supplies low-humidity gas to the shower header 432 is connected to the gas supply pipe 438. Also, a supply equipment group 440 including a valve that switches the supply of low-humidity gas to the shower header 432 on and off and a flow rate control valve is provided on the gas supply pipe 438. The supply equipment group 440 is controlled by the control unit 200. The low-humidity gas supplied to the shower header 432 from the gas supply source 439 via the gas supply pipe 438 is discharged from the gas discharge hole 437 toward the space above the upper chamber 342.

<Wafer Processing>
Next, an example of processing by the coating and developing system 1 will be described, focusing on processing by the high-temperature heat treatment device 41. FIG. 6 is a flow chart for explaining an example of processing by the coating and developing system 1. FIGS. 7 to 10 are explanatory diagrams showing the operation of the high-temperature heat treatment device 41. Note that the following processing is performed under the control of the control unit 200. In the following, it is assumed that the coating and developing system 1 has one high-temperature heat treatment device 41.

As shown in FIG. 6, in the high-temperature heat treatment device 41, even in an idle state, low-humidity gas is supplied from the shower head 360 into the processing space S3 (step S1). The idle state is a state in which the temperature of the heat plate 320 is elevated (for example, elevated to 500° C. or higher) and no processing of the wafer W by the high-temperature heat treatment device 41 is scheduled.

In the idle state, specifically, as shown in FIG. 7A, the upper chamber 342 is lowered so that the processing space S3 is formed. Furthermore, the processing space S3 is exhausted by the central exhaust section 370, the outer peripheral exhaust section 380, the peripheral exhaust section 350, and pin exhaust, and in this state, nitrogen gas is supplied as a low-humidity gas from the shower head 360. Furthermore, in the idle state, the total amount of exhaust from the processing space S3 is set to be greater than the amount of nitrogen supplied from the shower head 360 to the processing space S3. Therefore, the processing space S3 has a negative pressure relative to the space outside the chamber 340.

In this way, even in an idle state, the humidity in the processing space S3 can be maintained low by supplying low-humidity gas into the processing space S3 from the shower head 360. Furthermore, by creating a negative pressure in the processing space S3 as described above, even if gas containing a constituent metal of the upper chamber 342 (specifically, chromium) is generated, the gas can be prevented from leaking out of the chamber 340.
In the idle state, the low-humidity gas is not supplied from the shower head 431 and the shower header 432 in order to reduce the consumption of the low-humidity gas.

When a recipe for using the high-temperature heat treatment device 41 is read by the control unit 200 and processing of the wafer W is reserved for the high-temperature heat treatment device 41 (step S2), the idle state of the high-temperature heat treatment device 41 is released, and the gas supply unit 430 starts to supply nitrogen gas as a low-humidity gas to the outside of the chamber 340 in the processing container 300 (step S3). For example, as shown in FIG. 7B, the supply of nitrogen gas is started from both the shower head 431 and the shower header 432 of the gas supply unit 430.
Furthermore, the wafer W to be processed is taken out of the cassette C by the transfer device 20 and transferred to the delivery device 53 in the third block G 3 of the processing station 3 .
Even after the idle state is released, evacuation of the processing space S3 and supply of nitrogen gas from the shower head 360 to the processing space S3 are performed in the same manner as during the idle state, and the total amount of exhaust from the processing space S3 is set to be greater than the amount of nitrogen gas supplied from the shower head 360.

Next, a hard mask film is formed on the wafer W (step S4).
Specifically, the wafer W is transported by the transport device 70 to the heat treatment device 40 in the second block G2 and subjected to a temperature adjustment process. Thereafter, the wafer W is transported by the transport device 70 to, for example, the hard mask film forming device 31 in the first block G1, where a coating film of a treatment liquid for forming a chromium oxide film is formed on the wafer W. Next, the wafer W is transported by the transport device 70 to the heat treatment device 40 in the second block G2, where a hard mask pre-bake process is performed, whereby the coating film of the treatment liquid for forming a chromium oxide film on the wafer W is solidified, and a chromium oxide film as a hard mask film is formed. Next, the wafer W is returned to the transfer device 53 in the third block G3. Thereafter, the wafer W is transported by the transfer device 90 to the transfer device 54 in the same third block G3.

Next, the supply of nitrogen gas to the outside of the chamber 340 in the processing vessel 300 is stopped, and the wafer W is loaded into the processing vessel 300 of the high-temperature heat treatment device 41 (step S5).

Specifically, the wafer W is transported by the transport device 70 to the load/unload port 301 of the high-temperature heat treatment device 41, which is closed by the opening/closing shutter 302. The supply of nitrogen gas from the shower head 431 and the shower header 432 is stopped. Then, as shown in FIG. 8A, the load/unload port 301 is opened by the opening/closing shutter 302, and the wafer W is transported into the processing vessel 300 through the load/unload port 301 and handed over from the transport device 70 to the lift pins 410 in the cooling area 311. Then, the load/unload port 301 is closed by the opening/closing shutter 302, and the processing vessel 300 is sealed.

Then, the supply of nitrogen gas to the outside of the chamber 340 in the processing vessel 300 is resumed, and the exhaust by the central exhaust section 370 is stopped, and then the wafer W is transferred from the cooling region 311 to the heating region 310 (step S6).

8B , the supply of nitrogen gas from the shower head 431 and the shower header 432 is resumed. At the same time, exhaust by the central exhaust unit 370 is stopped. The exhaust amount by the peripheral exhaust unit 380 and the like are set so that the total amount of exhaust from the processing space S3 remains greater than the amount of nitrogen gas supplied from the shower head 360 even after exhaust by the central exhaust unit 370 is stopped.
Next, the wafer W is transferred from the lift pins 410 to the holding arm 421 of the transfer mechanism 420. Subsequently, the upper chamber 342 is raised, and the holding arm 421 holding the wafer W is moved from the cooling region 311 to the heating region 310, and the wafer W is transferred from the holding arm 421 to the heating plate 320 via the lift pins 330. As a result, the wafer W is placed on the heating plate 320, as shown in FIG.
In step S6, after the supply of nitrogen gas is resumed, the wafer W may be made to wait for a predetermined time in the cooling region 311. Note that this waiting is not necessary when dry air is used as the low humidity gas.

Then, the wafer W is heated to a high temperature of 500°C or higher (step S7).

Specifically, as shown in FIG. 9B, the upper chamber 342 is lowered to form the processing space S3, and heating of the wafer W at a high temperature is started.
Even during this high temperature heating, the total amount of exhaust gas from the processing space S 3 is kept greater than the amount of nitrogen gas supplied from the shower head 360 .
When a predetermined time has elapsed since the wafer W has started to be heated at a high temperature, exhaust by the central exhaust unit 370 is started. At this time, the exhaust amount by the central exhaust unit 370 and the like are set so that the total amount of exhaust from the processing space S3 is larger than the amount of nitrogen gas supplied from the shower head 360.
When a predetermined time has elapsed after the central exhaust unit 370 starts exhausting, the wafer W is raised to the intermediate position by the lift pins 330. In this state, sublimate material from the hard mask film on the wafer W is collected.
When a predetermined time has elapsed after the elevation to the intermediate position, the exhaust by the central exhaust unit 370 is stopped. Next, the upper chamber 342 is elevated. After that, the wafer W is elevated to the delivery position by the lift pins 330. The delivery position is a position where the wafer W is delivered between the lift pins 330 and the holding arm 421 of the transfer mechanism 420.

The flow rate of low humidity gas supplied to the processing space S3 is set so that the humidity in the processing space S3 remains below 0.01% during this high-temperature heating.

Next, the wafer W is transported from the heating area 310 to the cooling area 311 (step S8).

Specifically, the wafer W is transferred from the lift pins 330 to the holding arm 421 of the transfer mechanism 420. After that, the holding arm 421 holding the wafer W is moved from the heating region 310 to the cooling region 311, and the wafer W is transferred from the holding arm 421 to the cooling plate 400 via the lift pins 410. As a result, the wafer W is placed on the cooling plate 400, as shown in FIG. 10. In addition, the upper chamber 342 is lowered, and the processing space S3 is formed.

Then, the wafer W is cooled (step S9). Specifically, after the wafer W is placed on the cooling plate 400, it is left waiting for a predetermined time.

Then, the supply of nitrogen gas to the outside of the chamber 340 in the processing vessel 300 is stopped, and the wafer W is unloaded from the processing vessel 300 of the high-temperature heat treatment device 41 (step S10).

Specifically, the supply of nitrogen gas from the shower head 431 and the shower header 432 is stopped. Next, the loading/unloading port 301 is opened by the opening/closing shutter 302, and the wafer W is transferred from the cooling plate 400 to the transfer device 70 via the lifting pins 410. The wafer W is then unloaded from the processing vessel 300 via the loading/unloading port 301. After that, the loading/unloading port 301 is closed by the opening/closing shutter 302, and the processing vessel 300 is again sealed.

Then, the wafer W is subjected to subsequent processing (step S11).

Specifically, the wafer W is transferred by the transfer device 70 to the resist coating device 32, where a resist film is formed on the wafer W. Thereafter, the wafer W is transferred by the transfer device 70 to the heat treatment device 40, where the PAB treatment is performed. Thereafter, the wafer W is transferred by the transfer device 70 to the delivery device 55 in the third block G3.
Next, the wafer W is transferred to the delivery device 52 by the transfer device 90, and then transferred to the delivery device 62 in the fourth block G4 by the shuttle transfer device 80. Thereafter, the wafer W is transferred to the exposure device 4 by the transfer device 100 in the interface station 5, and is exposed to a predetermined pattern.
Next, the wafer W is transferred to the delivery device 60 in the fourth block G4 by the transfer device 100. Thereafter, the wafer W is transferred to the thermal treatment device 40 by the transfer device 70, and is subjected to the PEB treatment.
Subsequently, the wafer W is transferred by the transfer device 70 to the developing treatment device 30, where it is developed. After the development is completed, the wafer W is transferred by the transfer device 70 to the heat treatment device 40, where it is subjected to POST treatment.
Thereafter, the wafer W is transferred by the transfer device 70 to the delivery device 50 in the third block G3, and then transferred by the transfer device 20 in the cassette station 2 to the cassette C on a predetermined mounting plate 13.

This completes the series of processes performed by the coating and developing system 1.

<Material of Support Member>
Next, the material of the support member of the hot plate 320 (to be described later) will be described with reference to Fig. 11. Fig. 11 is a partially enlarged cross-sectional view of the hot plate 320.
As shown in Fig. 11, the hot plate 320 has a support member 500. A plurality of support members 500 are provided on the plate-shaped part 321 of the hot plate 320. Each support member 500 is provided in a downwardly recessed part 600 that is individually formed on the plate-shaped part 321. A step part 601 is formed on the bottom part of the recessed part 600 along the inner peripheral surface of the recessed part 600.

The supporting member 500 supports the wafer W by contacting the rear surface of the wafer W.
The support member 500 includes a main body portion 510, a washer 520, and a snap ring 530 as components.

The main body 510 has a flange 511 at its lower end. The main body 510 is inserted into the recess 600 of the heat plate 320 when in use. When inserted into the recess 600, the main body 510 is supported on the bottom surface of the recess 600, and its upper end protrudes from the upper surface of the plate-like portion 321. The upper end of the main body 510 abuts against the rear surface of the wafer W. The thickness of the flange 511 is approximately equal to the height of the step portion 601.

The washer 520 is provided so as to cover the upper surface of the flange 511 in the recess 600 and the upper surface of the step portion 601 .
The snap ring 530 fixes the support member 500 to the recess 600 via the washer 520 .

The exposed portion of the support member 500 including the above-mentioned components is made of a material other than stainless steel. Specifically, a portion of the support member 500 is made of nickel. A portion of the support member 500 may be made of a nickel alloy that has higher heat resistance than stainless steel.
More specifically, for example, the main body 510 of the support member 500 is made of alumina, the washer 520 is made of nickel, and the snap ring 530 is made of a nickel alloy (specifically, Inconel or Hastelloy) that has higher heat resistance than stainless steel. The washer 520 may be made of the nickel alloy.

<Main Effects of the Present Embodiment>
As described above, in this embodiment, the high-temperature heat treatment apparatus 41 includes the hot plate 320 that supports the wafer W and heats it at a high temperature of 500° C. or more, the chamber 340 including the upper chamber 342 that covers the hot plate 320 to form a processing space S3 on the hot plate 320 and has a surface on the processing space S3 side made of a metal-containing material, and an exhaust unit that exhausts the processing space S3. The chamber 340 has a shower head 360 that supplies a low-humidity gas with a humidity lower than that of the atmosphere to the processing space S3. Therefore, it is possible to suppress the reaction of the metal-containing material on the surface of the upper chamber 342 exposed to a high temperature with moisture. Specifically, it is possible to suppress the reaction of the chromium oxide (Cr ₂ O ₃ ) film on the surface of the upper chamber 342 exposed to a high temperature with moisture. Therefore, it is possible to suppress the generation of a gas containing a metal that constitutes the upper chamber 342. Specifically, it is possible to suppress the generation of a gas containing chromium in the chromium oxide film on the surface of the upper chamber 342. As a result, adhesion of the above-mentioned metals to the wafer W can be suppressed, and more specifically, adhesion of chromium to the front surface of the wafer W can be suppressed.

In this embodiment, even in the idle state described above, a low-humidity gas is supplied into the processing space S3 from the shower head 360. Therefore, compared to the case in which a low-humidity gas is not supplied into the processing space S3 in the idle state unlike the present embodiment, it is possible to suppress adhesion of a constituent metal (specifically, chromium) of the upper chamber 342 to the front surface of the wafer W during high-temperature heat treatment by the high-temperature heat treatment device 41 from an early stage after the idle state is released.
Furthermore, unlike this embodiment, when low-humidity gas is not supplied into the processing space S3 in the idle state, the humid atmosphere in the processing space S3 stagnates around the gas ejection holes 361. When the stagnant humid atmosphere comes into contact with the upper chamber 342, there is a risk of gas containing a metal (specifically, chromium) constituting the upper chamber 342 being generated. By supplying low-humidity gas into the processing space S3 from the shower head 360 even in the idle state as in this embodiment, it is possible to prevent the above-mentioned stagnation.

Furthermore, in this embodiment, the gas supply unit 430 supplies low-humidity gas to the space outside the chamber 340 in the processing vessel 300 even when no wafer W is present in the processing vessel 300. When the processing space S3 is at a negative pressure relative to the space outside the chamber 340, the atmosphere of the outer space flows into the processing space S3 through the gap g2. Therefore, as described above, when the gas supply unit 430 supplies low-humidity gas to the outer space even when no wafer W is present in the processing vessel 300, the moisture concentration of the atmosphere in the processing space S3 can be lowered immediately after the wafer W is loaded into the processing space S3, compared to when the gas supply unit 430 does not supply low-humidity gas. Therefore, the generation of gas containing the metal that constitutes the upper chamber 342 can be suppressed.

In addition, in this embodiment, the gas supply unit 430 supplies low-humidity gas to the space outside the chamber 340 in the processing vessel 300 of the high-temperature heat treatment device 41 from the time when the processing of the wafer W is reserved for the high-temperature heat treatment device 41. Specifically, in this embodiment, when the high-temperature heat treatment device 41 is in the above-mentioned idle state, the gas supply unit 430 supplies low-humidity gas to the space outside the chamber 340 continuously from the time when the processing of the wafer W is reserved for the high-temperature heat treatment device 41 and the idle state is released. That is, after the idle state is released, low-humidity gas is supplied from the gas supply unit 430 to the space outside the chamber 340 while the wafer W is being transported to the high-temperature heat treatment device 41. Therefore, when the processing of the wafer W is reserved and the idle state is released, the moisture concentration of the atmosphere in the processing space S3 is further reduced when the wafer W is carried into the high-temperature heat treatment device 41 and heat treatment is performed. Therefore, from an early stage after the idle state is released, adhesion of the constituent metals of the upper chamber 342 to the front surface of the wafer W during high-temperature heat treatment by the high-temperature heat treatment device 41 can be further suppressed.

Furthermore, in this embodiment, the supply of low-humidity gas from the gas supply unit 430 to the space outside the chamber 340 in the processing vessel 300 is stopped when the wafer W is loaded into the processing vessel 300. Therefore, it is possible to prevent the low-humidity gas from leaking from the processing vessel 300 to the wafer transfer region D when the wafer is loaded into the processing vessel 300. This is particularly useful when the low-humidity gas is nitrogen gas.

In addition, in this embodiment, the exposed portion of the support member 500 is made of a material other than stainless steel. Specifically, a portion of the support member 500 is made of nickel or a nickel alloy that has higher heat resistance than stainless steel. This makes it possible to prevent the constituent metal (specifically chromium) of the upper chamber 342 from adhering to the back surface of the wafer W.

According to repeated testing by the inventors, when the washer 520 and the snap ring 530 are made of SUS304, the amount of chromium detected on the back surface of the wafer W was approximately 2.4×10 ¹⁰ atoms/cm ^2. In contrast, when the washer 520 is made of nickel and the snap ring 530 is made of Inconel, the amount was approximately 0.2×10 ¹⁰ atoms/cm ² .

<Modification>
In the above example, when the low humidity gas is supplied from the gas supply unit 430, it is supplied from both the shower head 431 and the shower header 432. However, it is possible to supply it from only one of them.

The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the spirit and scope of the appended claims. For example, the components of the above-described embodiments may be combined in any manner. Such any combination will naturally provide the functions and effects of each of the components in the combination, as well as other functions and effects that will be apparent to a person skilled in the art from the description in this specification.

Furthermore, the effects described in this specification are merely descriptive or exemplary and are not limiting. In other words, the technology disclosed herein may achieve other effects that are apparent to a person skilled in the art from the description in this specification, in addition to or in place of the above effects.

Note that the following configuration examples also fall within the technical scope of the present disclosure.
(1) a heating unit that supports a substrate and heats it to a high temperature of 500° C. or higher;
a chamber including a lid portion that covers the heating portion to form a processing space above the heating portion and has a surface facing the processing space that is made of a metal-containing material;
an exhaust unit that exhausts the processing space,
The chamber has a gas supply unit that supplies a low-humidity gas having a humidity lower than that of the atmosphere to the processing space.
(2) The heat treatment apparatus according to (1) above, wherein the metal-containing material is stainless steel.
(3) further comprising a control unit;
The heat treatment apparatus according to

claim

1 or 2, wherein, under the control of the control unit, the heat treatment apparatus (A) executes a process of supplying the low-humidity gas from the gas supply unit into the processing space when the heating unit is in a heated state and no substrate processing is scheduled for the heat treatment apparatus.
(4) a housing that houses the heating unit and the chamber;
and a separate gas supply unit that supplies the low humidity gas to a space outside the chamber in the housing,
Under the control of the control unit, the heat treatment device executes a step of (B) supplying the low-humidity gas from the separate gas supply unit to a space outside the chamber in the housing;
The heat treatment apparatus according to (3), wherein the step (B) is performed even in a state where no substrate is present in the housing.
(5) The heat treatment apparatus according to (4), wherein the step (B) is performed from the time when the heat treatment apparatus is reserved for substrate processing until the reserved substrate processing is completed.
(6) The heat treatment apparatus according to (5), wherein the step (B) is stopped when a substrate is carried into the housing.
(7) The heating unit further includes a cooling unit that is provided in a cooling region adjacent to the heating region in the housing and supports and cools a substrate,
The other gas supply unit has a heating region gas supply unit that supplies the low-humidity gas to the heating region, and a cooling region gas supply unit that supplies the low-humidity gas to the cooling region,
The heat treatment apparatus according to any one of (4) to (6), wherein in the step (B), the low-humidity gas is supplied from at least one of the heating region gas supply unit and the cooling region gas supply unit.
(8) The heating unit has a support member that contacts a rear surface of the substrate to support the substrate,
The heat treatment device according to any one of (1) to (7), wherein the exposed portion of the support member is made of a material other than stainless steel.
(9) The heat treatment apparatus according to (8), wherein a portion of the support member is made of nickel or a nickel alloy having higher heat resistance than stainless steel.
(10) A method for heat treating a substrate using a heat treatment apparatus, comprising the steps of:
The heat treatment device includes:
a heating unit that supports the substrate and heats it at a high temperature;
a chamber including a lid portion that covers the heating portion to form a processing space above the heating portion and has a surface facing the processing space that is made of a metal-containing material;
an exhaust unit that exhausts the processing space,
(a) heating the substrate to a high temperature of 500° C. or higher by the heating unit;
(b) supplying a low-humidity gas having a humidity lower than that of the atmosphere to the processing space.
(11) The heat treatment method according to (10) above, wherein the metal-containing material is stainless steel.
(12) The heat treatment method according to (10) or (11), wherein the step (b) is performed even when the heating unit is in a heated state and no substrate processing is scheduled for the heat treatment device.
(13) The heat treatment apparatus further includes a housing that houses the heating unit and the chamber,
(c) supplying the low humidity gas to a space outside the chamber within the enclosure;
The heat treatment method according to (12) above, wherein the step (c) is performed even in a state where no substrate is present in the housing.
(14) The heat treatment method according to (13), wherein the step (c) is performed from a time when the heat treatment apparatus is reserved for substrate treatment until the reserved substrate treatment is completed.
(15) The heat treatment method according to (14), wherein the (c) step is stopped when the substrate is carried into the housing.
(16) The heat treatment device comprises:
a cooling unit that is provided in a cooling region adjacent to a heating region in which the heating unit is provided in the housing and that supports and cools a substrate;
a heating region gas supply unit for supplying the low humidity gas to the heating region;
a cooling region gas supply unit for supplying the low humidity gas to the cooling region;
The heat treatment method according to any one of (13) to (15), wherein in the step (c), the low-humidity gas is supplied from at least one of the heating region gas supply unit and the cooling region gas supply unit.

41 High temperature heat treatment apparatus 320 Hot plate 340 Chamber 342 Upper chamber 350 Peripheral exhaust section 370 Central exhaust section 380 Peripheral exhaust section 381 Exhaust port S3 Processing space W Wafer

Claims

a heating unit that supports the substrate and heats it at a high temperature of 500° C. or higher;
a chamber including a lid portion that covers the heating portion to form a processing space above the heating portion and has a surface facing the processing space that is made of a metal-containing material;
an exhaust unit that exhausts the processing space,
The chamber has a gas supply unit that supplies a low-humidity gas having a humidity lower than that of the atmosphere to the processing space.
The heat treatment device of claim 1, wherein the metal-containing material is stainless steel.
A control unit is further provided.
3. The heat treatment apparatus according to claim 1, wherein, under the control of the control unit, the heat treatment apparatus executes a step of (A) supplying the low-humidity gas from the gas supply unit into the processing space when the heating unit is in a raised temperature state and no substrate processing is scheduled for the heat treatment apparatus.
a housing that houses the heating unit and the chamber;
and a separate gas supply unit that supplies the low humidity gas to a space outside the chamber in the housing,
Under the control of the control unit, the heat treatment device executes a step of (B) supplying the low-humidity gas from the separate gas supply unit to a space outside the chamber in the housing;
The heat treatment apparatus according to claim 3 , wherein the step (B) is performed even in a state where no substrate is present within the housing.
The heat treatment device according to claim 4, wherein the (B) step is performed from the time when the heat treatment device is reserved for substrate processing until the reserved substrate processing is completed.
The heat treatment apparatus of claim 5, wherein the (B) step is stopped when the substrate is loaded into the housing.
a cooling unit that is provided in a cooling region adjacent to the heating region in which the heating unit is provided in the housing and that supports and cools a substrate;
The other gas supply unit has a heating region gas supply unit that supplies the low-humidity gas to the heating region, and a cooling region gas supply unit that supplies the low-humidity gas to the cooling region,
The heat treatment apparatus according to claim 4 , wherein in the step (B), the low humidity gas is supplied from at least one of the heating region gas supply unit and the cooling region gas supply unit.
the heating unit has a support member that supports the substrate by contacting the rear surface of the substrate,
3. The heat treatment apparatus according to claim 1, wherein the exposed portion of the support member is made of a material other than stainless steel.
The heat treatment device according to claim 8, wherein a portion of the support member is made of a nickel alloy having higher heat resistance than nickel or stainless steel.
A method for heat treating a substrate using a heat treatment apparatus, comprising:
The heat treatment device includes:
a heating unit that supports the substrate and heats it at a high temperature;
a chamber including a lid portion that covers the heating portion to form a processing space above the heating portion and has a surface facing the processing space that is made of a metal-containing material;
an exhaust unit that exhausts the processing space,
(a) heating the substrate to a high temperature of 500° C. or higher by the heating unit;
(b) supplying a low-humidity gas having a humidity lower than that of the atmosphere to the processing space.
The heat treatment method according to claim 10, wherein the metal-containing material is stainless steel.
The heat treatment method according to claim 10 or 11, wherein the step (b) is performed even when the heating unit is in a heated state and the heat treatment device is not scheduled to process a substrate.
The heat treatment device further includes a housing that houses the heating unit and the chamber,
(c) supplying the low humidity gas to a space outside the chamber within the enclosure;
The heat treatment method according to claim 12 , wherein the step (c) is performed even in a state where no substrate is present in the housing.
The heat treatment method according to claim 13, wherein the step (c) is performed from the time when the heat treatment apparatus is reserved for substrate processing until the reserved substrate processing is completed.
The heat treatment method according to claim 14, wherein the step (c) is stopped when the substrate is loaded into the housing.
The heat treatment device includes:
a cooling unit that is provided in a cooling region adjacent to a heating region in which the heating unit is provided in the housing and that supports and cools a substrate;
a heating region gas supply unit for supplying the low humidity gas to the heating region;
a cooling region gas supply unit for supplying the low humidity gas to the cooling region;
The heat treatment method according to claim 13 , wherein in the step (c), the low humidity gas is supplied from at least one of the heating region gas supply part and the cooling region gas supply part.