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WO2024200805A1 - Power module - Google Patents

Power module Download PDF

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Publication number
WO2024200805A1
WO2024200805A1 PCT/EP2024/058747 EP2024058747W WO2024200805A1 WO 2024200805 A1 WO2024200805 A1 WO 2024200805A1 EP 2024058747 W EP2024058747 W EP 2024058747W WO 2024200805 A1 WO2024200805 A1 WO 2024200805A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductor
transistors
ths
power module
kelvin
Prior art date
Application number
PCT/EP2024/058747
Other languages
French (fr)
Inventor
Laurent MASSOL
Raouaa DRIDI
Xavier DE-FRUTOS
Jean-Michel Morelle
Gabriel KOPP
Original Assignee
Valeo Eautomotive Germany Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valeo Eautomotive Germany Gmbh filed Critical Valeo Eautomotive Germany Gmbh
Publication of WO2024200805A1 publication Critical patent/WO2024200805A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/41—Structure, shape, material or disposition of the strap connectors after the connecting process of a plurality of strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/3701—Shape
    • H01L2224/37011—Shape comprising apertures or cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/40227—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits

Definitions

  • the present invention relates to a power module.
  • the power module implementing a switching arm with a high-side switch formed of several transistors, called high-side, and a low-side switch also formed of several transistors, called low-side.
  • the transistors on each side are distributed over two parallel rows.
  • the power module further comprises a control circuit with two parts, spaced apart from each other, for controlling respectively the high-side transistors and the low-side transistors.
  • Each of the two parts comprises pins projecting upwards or downwards to be connected to drivers.
  • a power module comprises: a first conductor comprising one or more portions; a second conductor comprising a portion; a third conductor comprising first and second portions; the portions of the conductors succeeding one another in a first direction in the order: the portion of the second conductor, the second portion of the third conductor, the portion(s) of the first conductor and the first portion of the third conductor; a first switch formed of aligned first transistors, the first transistors being pressed against the second portion of the third conductor and electrically connected to the portion of the second conductor; a second switch formed of aligned second transistors, the second transistors being pressed against the portion(s) of the first conductor and electrically connected to the first portion of the third conductor; and between the first transistors and the second transistors, a transistor control circuit.
  • oscillations can be reduced by aligning the high-side transistors and the low-side transistors, each time in a single alignment, and by positioning the control circuit between the two alignments, while allowing easy-to-make connections.
  • This is achieved by splitting the phase conductor to alternate a negative conductive portion, a phase conductive portion, a positive conductive portion, and again a phase conductive portion. This allows the connections with the high-side transistors to extend in one direction, while the low-side connections extend in the opposite direction, thereby freeing up space between the transistors to accommodate the control circuit. This particularly concerns the high-current connections of the upper face of the high-side transistors.
  • Aligning the transistors also helps reduce the risk of oscillations during switching due to a phase shift between the switching times of the transistors.
  • the invention may further comprise one or more of the following optional features, in any technically possible combination.
  • the portions of the conductors succeeding one another in the first direction in the aforementioned order are done without any other intermediate conductor between said portions. That is to say that said portions succeeding one another in the first direction are adjacent to one another.
  • the portion of the second conductor is adjacent to the second portion of the third conductor which is itself adjacent to the portion(s) of the first conductor which is itself adjacent to the first portion of the third conductor.
  • each switch is formed from a single row of aligned transistors.
  • the power module comprises only two switches.
  • a conductor is formed in one piece. That is, a conductor is formed in one piece. In other words, a conductor is a single piece. It will be understood, in this example, that the conductor is not formed of different portions separated from each other. In particular, in an exemplary embodiment, the third conductor is formed in one piece.
  • the third conductor comprises a connecting portion connecting the first portion of the third conductor and the second portion of the third conductor.
  • the portions of the conductors are flat. This makes it possible to improve the compactness of the power module and to simplify their manufacture.
  • the flat portions extend parallel to each other. This makes it possible to improve the compactness of the power module.
  • the first conductor comprises first and second planar portions, a portion of the second transistors being pressed against the first planar portion of the first conductor and the remainder of the second transistors being pressed against the second planar portion of the first conductor, and the third conductor comprises a connecting portion connecting the first and second planar portions by passing between the first and second planar portions of the first conductor.
  • one half of the second transistors is plated against the first planar portion of the first conductor and the other half of the second transistors is plated against the second planar portion of the first conductor.
  • the second transistors are pressed against the flat portion of the first conductor and the third conductor comprises a connecting portion connecting the first and second flat portions by passing above the flat portion of the first conductor. This makes it possible to simplify the connections between the conductors.
  • the first conductor comprises at least one first terminal located before the flat portion of the second conductor in the first direction and, for each first terminal, a connecting portion connecting the flat portion to the first terminal considered, passing next to the second flat portion of the third conductor and the flat portion of the second conductor.
  • the first conductor comprises at least one first terminal located before the flat portion of the second conductor in the first direction and, for each first terminal, a connecting portion connecting the flat portion to the first terminal considered by passing above the second flat portion of the third conductor and the flat portion of the second conductor.
  • the power module comprises first connections electrically connecting the first transistors respectively to the flat portion of the second conductor, these first connections being identical and extending parallel to each other and/or comprising second connections electrically connecting the second transistors respectively to the flat portion of the third conductor, these second connections being identical and extending parallel to each other.
  • each of the first transistors comprises a Kelvin terminal and the control circuit comprises a first Kelvin track to which all of the Kelvin terminals of the first transistors are connected and/or each of the second transistors comprises a Kelvin terminal and the control circuit comprises a second Kelvin track to which all of the Kelvin terminals of the second transistors are connected.
  • control circuit comprises a first Kelvin pin and a resistor connected between the first Kelvin track and the first Kelvin pin and/or a second Kelvin pin and a resistor connected between the second Kelvin track and the second Kelvin pin.
  • the resistor makes it possible to reduce parasitic inductances in the control loop and to have a better balance in the switching of the transistors.
  • each of the first transistors comprises a control terminal and the control circuit comprises a first global control pin and, for each control terminal of the first transistors, a respective resistor connected between the control terminal considered and the first global control pin and/or each of the second transistors comprises a control terminal and the control circuit comprises a second global control pin and, for each control terminal of the second transistors, a respective resistor connected between the control terminal considered and the second global control pin.
  • the resistor makes it possible to reduce the parasitic inductances in the control loop and to have a better balance in the switching of the transistors.
  • the power module comprises a so-called control substrate, for example pressed against the second portion of the third conductor, on which the control circuit extends.
  • control circuit comprises control electronics, such as a high-side transistor driver and/or a low-side transistor driver.
  • FIG. 1 is a schematic view of a land motor vehicle in which the invention can be implemented
  • FIG. 2 is an electrical diagram of a switching circuit that can be used in the land motor vehicle of FIG. 1
  • FIG. 3 is a three-dimensional view of a first example of a power module according to the invention
  • FIG. 4 is a top view of the power module of FIG. 3
  • FIG. 5 is a top view of a second example of a power module according to the invention
  • FIG. 6 is a three-dimensional view of a type of low-side switch connection strips of the power module
  • FIG. 7 is a three-dimensional view of a low-side switch connection clip of the power module.
  • the vehicle 100 comprises one or more drive wheels 102 designed to put the vehicle 100 in motion.
  • the mobility device 100 To drive the drive wheel(s) 102, the mobility device 100 further comprises an electric drive device 104 and a direct voltage source 106, such as a battery, designed to electrically power the electric drive device 104.
  • a direct voltage source 106 such as a battery
  • the electric drive device 104 comprises an electric machine 108, in particular polyphase, for example three-phase, connected to the drive wheel(s) 102 to drive the latter.
  • the electric drive device 104 further comprises an AC-DC electric voltage converter 110 connected between the DC voltage source 106 and the electric machine 108.
  • the electric voltage converter 110 is configured to transfer electric power between the DC voltage source 106 and the electric machine 108.
  • the AC-DC converter 110 is configured to operate as an inverter to transfer electric power from the DC voltage source 106 to the electric machine 108 operating as an electric motor.
  • the AC-DC converter 110 may also be configured to operate as a rectifier to transfer electrical power from the electrical machine 108 operating as an electrical generator to the DC voltage source 106, for example to recharge the latter.
  • the electrical voltage converter 110 comprises a switching circuit 202 with switches HS, LS.
  • the latter are transistor switches, such as metal-oxide gate field effect transistors (also referred to by the acronym MOSFET) or silicon metal-oxide gate field effect transistors (also referred to by the acronym Si MOSFET) or silicon carbide metal-oxide gate field effect transistors (also referred to by the acronym SiC MOSFET) or insulated gate bipolar transistors (also referred to by the acronym the acronym the acronym the acronym IGBT) or gallium nitride field effect transistors (also known by the acronym GaN FET).
  • MOSFET metal-oxide gate field effect transistors
  • Si MOSFET silicon metal-oxide gate field effect transistors
  • SiC MOSFET silicon carbide metal-oxide gate field effect transistors
  • IGBT insulated gate bipolar transistors
  • GaN FET gallium nitride field effect transistors
  • the switching circuit 202 comprises at least one switching arm 206, for example, as many switching arms 206 as there are stator phases of the electric machine 108.
  • Each switching arm 206 comprises a high side switch HS and a low side switch LS connected to each other at a midpoint.
  • Each switching arm 206 is connected between terminals +, - of the DC voltage source 106.
  • the midpoint is connected to one of the stator phases of the electric machine 108.
  • Each switching arm 206 is thus configured to switch between two configurations.
  • the high side switch HS is closed and the low side switch LS is open, such that a DC voltage is essentially applied to the midpoint and thus to the stator phase connected thereto.
  • the high side switch HS is open and the low side switch LS is closed, such that a zero voltage is applied to the midpoint and thus to the associated stator phase.
  • the electrical voltage converter 110 further comprises electronics 208 for controlling the switches HS, LS, generally via respective drivers (not shown).
  • the control electronics 208 is for example designed to control the switches HS, LS in order to regulate phase currents transmitted to the stator phases from the midpoints.
  • the positions of the elements of the power module 300 will be described hereinafter with reference to a direct trihedron forming a reference frame X, Y, Z, in which the X direction is a right-left direction, the Y direction is a front-rear direction, and the Z direction is a vertical direction.
  • the power module 300 firstly comprises several electrical conductors: a first conductor intended to be connected to the positive terminal + of the voltage source 106 and therefore called positive conductor C+, a second conductor intended to be connected to the negative terminal - of the voltage source 106 and therefore called the positive conductor C-, and a third conductor intended to be connected to one of the phases and to present an alternating voltage and therefore called the alternating conductor C-.
  • the conductors C+, C-, C- are arranged to present the following succession in a direction D1: a portion P-1 of the negative conductor C-, then a portion P-2 of the phase conductor C-, then at least one portion P+1, P+2 of the positive conductor C+, then another portion P-1 of the phase conductor C ⁇ .
  • the direction D1 is parallel to the direction Y.
  • the preceding portions follow one another from the back to the front.
  • the portions P-1, P-2, P+1, P+2, P-1 are planar and extend parallel to each other, i.e. parallel to the horizontal plane X,Y.
  • these portions P-1, P-2, P+1, P+2, P-1 are coplanar as in the illustrated example.
  • these portions P-1, P-2, P+1, P+2, P-1 could be offset in height by a few tenths of a millimeter.
  • the alternating conductor C- further comprises a connecting portion PL- connecting the portions P ⁇ i, P- 2 by passing between the portions P+i, P+ 2 of the first conductor C+.
  • the connecting portion PL- is planar and parallel to the other portions P-1, P-2, P+1, P+2, P-1, for example coplanar with the latter.
  • the low-side switch LS is formed of several low-side transistors TLS pressed against the portion P-2 of the alternating conductor C- and electrically connected to the portion P-1 of the negative conductor C-, for example by respective RUBLS strips with for example two contact zones extending in the Y direction or in the X direction (see FIG. 6) on the connected low-side transistor TLS, or by one or more clips each connecting several low-side transistors TLS (see FIG. 7, in particular the reference CLP).
  • the high side switch HS is formed by several high side transistors THS pressed against the positive conductor C+ and electrically connected to the alternating conductor C-, for example by respective RUBHS strips (with for example two contact areas as for the RUBLS strips) or by one or more clips each connecting several high side transistors THS (as for the low side transistors TLS).
  • RUBHS strips with for example two contact areas as for the RUBLS strips
  • clips each connecting several high side transistors THS (as for the low side transistors TLS).
  • a part of the high side transistors THS for example, half
  • the other part of the high-side transistors THS e.g. the other half
  • the positive conductor C+ further comprises at least one terminal called positive B+1, B+2
  • the negative conductor C- further comprises at least one terminal called negative B-
  • the alternating conductor C- comprises at least one terminal called alternating B ⁇ .
  • two positive terminals B+1, B+2 are provided. These two positive terminals B+1, B+2 are respectively electrically connected to the portions P+1, P+2 of the positive conductor C+.
  • the positive conductor C+ comprises two connecting portions PL+1, PL+2 extending rearward from the portions P+1, P+2 respectively. These connecting portions PL+1, PL+2 bypass the portion P-2 of the alternating conductor C- to the right and the left.
  • the connecting portions PL+1, PL+2 are planar and parallel to the other portions P-1, P-2, P+1, P+2, P-1, for example coplanar with the latter.
  • the positive terminals B+1, B+2 respectively comprise fixing lugs respectively attached to the connection portions PL+1, PL+2
  • the negative terminal B- comprises a fixing lug attached to the portion P-1 of the negative conductor C-
  • the alternating terminal B- comprises a fixing lug attached to the portion P-1 of the alternating conductor C ⁇ .
  • the control module 300 comprises a substrate SUB carrying the portions P-1, P-2, P+1, P+2, P-1, as well as the portions PL-, PL+1, PL+2 if present.
  • the substrate SUB and the portions are formed by a directly bonded copper substrate (from the English “Direct Bonded Copper substrate” or “DBC substrate”) or else an active metal brazed substrate (from the English “Active Metal Brazed substrate” or “AMB substrate”).
  • the conductors C+, C-, C- could be formed with a rigid conductive frame (from the English “leadframe”) and not require a substrate.
  • the power module 300 further comprises, between the first transistors TLS and the second transistors THS, a control circuit CMD for the transistors TLS, THS.
  • the power module 300 comprises, for example, a substrate called a control substrate SUB', for example pressed against the portion P ⁇ 2 of the alternating conductor C ⁇ , on which the control circuit CMD extends.
  • the control substrate SUB' comprises a thick film ceramic or an insulating organic material of the printed circuit type (PCB)
  • this control substrate SUB' is naturally insulated and can thus extend over one or more neighboring portions, for example the portion PL+1 and/or PL+2.
  • each of the low-side transistors TLS and/or the high-side transistors THS comprises a Kelvin terminal KLS, KHS, for example a Kelvin source terminal.
  • the control circuit CMD comprises for example a low-side Kelvin track PKLS to which all the Kelvin terminals of the low-side transistors TLS are connected and/or a high-side Kelvin track PKHS to which all the Kelvin terminals of the high-side transistors THS are connected.
  • control circuit CMD comprises a low side Kelvin pin BKLS and a resistor RKLS connected between the low side Kelvin track PKLS and the low side Kelvin pin and/or the control circuit CMD comprises a high side Kelvin pin BKHS and a resistor RKHS connected between the high side Kelvin track PKHS and the high side Kelvin pin BKHS.
  • each of the low-side transistors TLS comprises a control terminal BCLS, for example a gate terminal
  • the control circuit CMD comprises a global low-side control pin BGLS and, for each low-side transistor TLS, a respective resistor RCLS connected between its control terminal BCLS and the global low-side control pin BGLS.
  • each of the high-side transistors THS comprises a control terminal BCHS and the control circuit CMD comprises a global high-side control pin BGHS and, for each high-side transistor THS, a respective resistor RCHS connected between its control terminal BCLS and the global high-side control pin BGHS.
  • resistors RKLS, RKHS, RCSL, RCHS can then be components mounted on the surface of the control substrate SUB' (from the English "Surface Mounted Device" or SMD).
  • all or part of the RKLS, RKHS, RCSL, RCHS resistors can then be components directly printed on the ceramic SUB' control substrate.
  • the pins BKHS, BKLS, BGHS, BGLS project upwards for example.
  • the control electronics 208 extend above the control circuit CMD, with for example a low-side driver for the low-side transistors TLS and a high-side driver for the high-side transistors THS.
  • all or part of the control electronics could be part of the control circuit CMD, for example by being interposed between the resistors RCLS, RCHS and the control pins BGLS, BGHS.
  • the power module 500 is similar to the power module 300, except for the differences which will be detailed.
  • the positive conductor C+ has a single portion P+1 on which all the high side transistors THS are plated. To connect together the two portions P ⁇ 1, P-2 of the alternating conductor C-, the connecting part PL- passes above the portion P+1 of the positive conductor C+.
  • the connecting portions PL+1, PL+2 pass above the portion P-2 of the alternating conductor C- and the portion P-1 of the negative conductor C-. This solution allows the portion P+1 to have a large surface area for plating the high-side transistors THS.
  • the positive conductor C+ comprises, for example, a third connection portion PL+3 connecting the two other connection portions PL+1, PL+2.

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Abstract

The invention relates to a power module (300) comprising: - a first conductor (C+) comprising one or more portions (P+1, P+2); - a second conductor (C-) comprising one portion (P-1); - a third conductor (C~) comprising first and second portions (P~1, P~2); the portions of the conductors succeeding one another in a first direction (D1) in the following order: the portion (P-1) of the second conductor (C-), the second portion (P~2) of the third conductor (C~), the one or more portions (P+1; P+1, P+2) of the first conductor (C+) and the first portion (P~1) of the third conductor (C~); - a first switch formed of aligned first transistors (TLS), the first transistors (TLS) being pressed against the second portion (P~2) of the third conductor (C~) and electrically connected to the portion (P-1) of the second conductor (C-); - a second switch formed of aligned second transistors (THS), the second transistors (THS) being pressed against the one or more portions (P+1) of the first conductor (C+) and electrically connected to the first portion (P~1) of the third conductor (C~); and - between the first transistors (TLS) and the second transistors (THS), a control circuit (CMD) for controlling the transistors (TLS, THS).

Description

Description Description
TITRE : MODULE DE PUISSANCE TITLE: POWER MODULE
Domaine technique de l’invention Technical field of the invention
[0001] La présente invention concerne un module de puissance. [0001] The present invention relates to a power module.
Arrière-plan technologique Technological background
[0002] Il est connu d’utiliser un module de puissance implémentant un bras de commutation avec un interrupteur de côté haut formé de plusieurs transistors, dits de côté haut, et un interrupteur de côté bas formé également de plusieurs transistors, dits de côté bas. Généralement, les transistors de chaque côté sont répartis sur deux rangées parallèles. Le module de puissance comporte en outre un circuit de commande avec deux parties, distantes l’une de l’autre, pour la commande de respectivement les transistors de côté haut et les transistors de côté bas. Chacune des deux parties comporte des broches se projetant vers le haut ou vers le bas pour être connectées à des pilotes. [0002] It is known to use a power module implementing a switching arm with a high-side switch formed of several transistors, called high-side, and a low-side switch also formed of several transistors, called low-side. Generally, the transistors on each side are distributed over two parallel rows. The power module further comprises a control circuit with two parts, spaced apart from each other, for controlling respectively the high-side transistors and the low-side transistors. Each of the two parts comprises pins projecting upwards or downwards to be connected to drivers.
[0003] À cause de cette configuration, à chaque commutation, les signaux électriques des transistors présentent des oscillations pouvant conduire à une instabilité électrique pouvant mener à un emballement thermique et/ou une destruction électrique des transistors. [0003] Because of this configuration, at each switching, the electrical signals of the transistors exhibit oscillations which can lead to electrical instability which can lead to thermal runaway and/or electrical destruction of the transistors.
[0004] Il peut ainsi être souhaité de prévoir un module de puissance qui permette de s’affranchir d’au moins une partie des problèmes et contraintes précités. [0004] It may thus be desirable to provide a power module which makes it possible to overcome at least some of the aforementioned problems and constraints.
Résumé de l’invention Summary of the invention
[0005] Il est donc proposé un module de puissance caractérisé en ce qu’il comporte : un premier conducteur comportant une ou plusieurs portions ; un deuxième conducteur comportant une portion ; un troisième conducteur comportant des première et deuxième portions ; les portions des conducteurs se succédant selon une première direction dans l’ordre : la portion du deuxième conducteur, la deuxième portion du troisième conducteur, la ou les portions du premier conducteur et la première portion du troisième conducteur ; un premier interrupteur formé de premiers transistors alignés, les premiers transistors étant plaqués contre la deuxième portion du troisième conducteur et connectés électriquement à la portion du deuxième conducteur ; un deuxième interrupteur formé de deuxièmes transistors alignés, les deuxièmes transistors étant plaqués contre la ou les portions du premier conducteur et connectés électriquement à la première portion du troisième conducteur ; et entre les premiers transistors et les deuxièmes transistors, un circuit de commande des transistors. [0005] A power module is therefore proposed, characterized in that it comprises: a first conductor comprising one or more portions; a second conductor comprising a portion; a third conductor comprising first and second portions; the portions of the conductors succeeding one another in a first direction in the order: the portion of the second conductor, the second portion of the third conductor, the portion(s) of the first conductor and the first portion of the third conductor; a first switch formed of aligned first transistors, the first transistors being pressed against the second portion of the third conductor and electrically connected to the portion of the second conductor; a second switch formed of aligned second transistors, the second transistors being pressed against the portion(s) of the first conductor and electrically connected to the first portion of the third conductor; and between the first transistors and the second transistors, a transistor control circuit.
[0006] Ainsi, grâce à l’invention, les oscillations peuvent être diminuées en alignant les transistors de côté haut et les transistors de côté bas, à chaque fois dans un seul alignement, et en positionnant le circuit de commande entre les deux alignements, tout en permettant des connexions faciles à réaliser. Cela est obtenu en dédoublant le conducteur de phase pour faire alterner une portion conductrice négative, une portion conductrice de phase, une portion conductrice positive, et à nouveau une portion conductrice de phase. Cela permet que les connexions avec les transistors de côté haut s’étendent dans une direction, tandis que les connexions du côté bas s’étendent dans la direction inverse, ce qui libère ainsi l’espace entre les transistors pour y placer le circuit de commande. Il s’agit notamment ici des connections de fort courant de la face supérieure des transistors de côté haut. [0006] Thus, by virtue of the invention, oscillations can be reduced by aligning the high-side transistors and the low-side transistors, each time in a single alignment, and by positioning the control circuit between the two alignments, while allowing easy-to-make connections. This is achieved by splitting the phase conductor to alternate a negative conductive portion, a phase conductive portion, a positive conductive portion, and again a phase conductive portion. This allows the connections with the high-side transistors to extend in one direction, while the low-side connections extend in the opposite direction, thereby freeing up space between the transistors to accommodate the control circuit. This particularly concerns the high-current connections of the upper face of the high-side transistors.
[0007] Le fait d’aligner les transistors permet également de réduire le risque des oscillations lors de la commutation due à un déphasage entre les temps de commutation des transistors. [0007] Aligning the transistors also helps reduce the risk of oscillations during switching due to a phase shift between the switching times of the transistors.
[0008] L’invention peut en outre comporter l’une ou plusieurs des caractéristiques optionnelles suivantes, selon toute combinaison techniquement possible. [0008] The invention may further comprise one or more of the following optional features, in any technically possible combination.
[0009] De façon optionnelle, les portions des conducteurs se succédant dans la première direction dans l’ordre précité se fait sans autre conducteur intermédiaire entre lesdites portions. C’est-à-dire que lesdites portions se succédant dans la première direction sont adjacentes les unes des autres. Autrement dit, la portion du deuxième conducteur est adjacente à la deuxième portion du troisième conducteur qui est elle-même adjacente à la ou les portions du premier conducteur qui est elle- même adjacente à la première portion du troisième conducteur. [0010] De façon optionnelle, chaque interrupteur est formé d’une unique rangée de transistors alignés. [0009] Optionally, the portions of the conductors succeeding one another in the first direction in the aforementioned order are done without any other intermediate conductor between said portions. That is to say that said portions succeeding one another in the first direction are adjacent to one another. In other words, the portion of the second conductor is adjacent to the second portion of the third conductor which is itself adjacent to the portion(s) of the first conductor which is itself adjacent to the first portion of the third conductor. [0010] Optionally, each switch is formed from a single row of aligned transistors.
[0011] De façon optionnelle, le module de puissance comprend uniquement deux interrupteurs. [0011] Optionally, the power module comprises only two switches.
[001 ] De façon optionnelle, un conducteur est formé d’un seul tenant. C’est à dire, un conducteur est formé d’une seule pièce. Autrement dit, un conducteur est monobloc. On comprendra, dans cet exemple, que le conducteur n’est pas formé de différentes portions séparées les unes des autres. En particulier dans un exemple de réalisation, le troisième conducteur est formé d’un seul tenant. [001] Optionally, a conductor is formed in one piece. That is, a conductor is formed in one piece. In other words, a conductor is a single piece. It will be understood, in this example, that the conductor is not formed of different portions separated from each other. In particular, in an exemplary embodiment, the third conductor is formed in one piece.
[0013] De façon optionnelle, le troisième conducteur comporte une portion de liaison reliant la première portion du troisième conducteur et la deuxième portion du troisième conducteur. [0013] Optionally, the third conductor comprises a connecting portion connecting the first portion of the third conductor and the second portion of the third conductor.
[0014] De façon optionnelle, les portions des conducteurs sont planes. Cela permet d’améliorer la compacité du module de puissance et de simplifier leur fabrication. [0014] Optionally, the portions of the conductors are flat. This makes it possible to improve the compactness of the power module and to simplify their manufacture.
[0015] De façon optionnelle également, les portions planes s’étendent parallèlement les unes aux autres. Cela permet d’améliorer la compacité du module de puissance. [0015] Also optionally, the flat portions extend parallel to each other. This makes it possible to improve the compactness of the power module.
[0016] De façon optionnelle également, le premier conducteur comporte des première et deuxième portions planes, une partie des deuxièmes transistors étant plaquée contre la première portion plane du premier conducteur et le reste des deuxièmes transistors étant plaqué contre la deuxième portion plane du premier conducteur, et le troisième conducteur comporte une portion de liaison reliant les première et deuxième portions planes en passant entre les première et deuxième portion planes du premier conducteur. [0016] Also optionally, the first conductor comprises first and second planar portions, a portion of the second transistors being pressed against the first planar portion of the first conductor and the remainder of the second transistors being pressed against the second planar portion of the first conductor, and the third conductor comprises a connecting portion connecting the first and second planar portions by passing between the first and second planar portions of the first conductor.
[0017] De façon optionnelle également, une moitié des deuxièmes transistors est plaquée contre la première portion plane du premier conducteur et l’autre moitié des deuxièmes transistors est plaquée contre la deuxième portion plane du premier conducteur. [0017] Also optionally, one half of the second transistors is plated against the first planar portion of the first conductor and the other half of the second transistors is plated against the second planar portion of the first conductor.
[0018] De façon optionnelle également, les deuxièmes transistors sont plaqués contre la portion plane du premier conducteur et le troisième conducteur comporte une portion de liaison reliant les première et deuxième portions planes en passant au-dessus de la portion plane du premier conducteur. Cela permet de simplifier les connexions entre les conducteurs. [0019] De façon optionnelle également, le premier conducteur comporte au moins une première borne située avant la portion plane du deuxième conducteur selon la première direction et, pour chaque première borne, une portion de liaison reliant la portion plane à la première borne considérée en passant à côté de la deuxième portion plane du troisième conducteur et de la portion plane du deuxième conducteur. [0018] Also optionally, the second transistors are pressed against the flat portion of the first conductor and the third conductor comprises a connecting portion connecting the first and second flat portions by passing above the flat portion of the first conductor. This makes it possible to simplify the connections between the conductors. [0019] Also optionally, the first conductor comprises at least one first terminal located before the flat portion of the second conductor in the first direction and, for each first terminal, a connecting portion connecting the flat portion to the first terminal considered, passing next to the second flat portion of the third conductor and the flat portion of the second conductor.
[0020] De façon optionnelle également, le premier conducteur comporte au moins une première borne située avant la portion plane du deuxième conducteur selon la première direction et, pour chaque première borne, une portion de liaison reliant la portion plane à la première borne considérée en passant au-dessus de la deuxième portion plane du troisième conducteur et de la portion plane du deuxième conducteur. [0020] Also optionally, the first conductor comprises at least one first terminal located before the flat portion of the second conductor in the first direction and, for each first terminal, a connecting portion connecting the flat portion to the first terminal considered by passing above the second flat portion of the third conductor and the flat portion of the second conductor.
[0021] De façon optionnelle également, le module de puissance comporte des premières connexions connectant électriquement respectivement les premiers transistors à la portion plane du deuxième conducteur, ces premières connexions étant identiques et s’étendant parallèlement les unes autres et/ou comportant des deuxièmes connexions connectant électriquement respectivement les deuxièmes transistors à la portion plane du troisième conducteur, ces deuxièmes connexions étant identiques et s’étendant parallèlement les unes autres. Cela permet de simplifier le module de puissance en standardisant les connexions et ainsi réduire son coût de fabrication. [0021] Also optionally, the power module comprises first connections electrically connecting the first transistors respectively to the flat portion of the second conductor, these first connections being identical and extending parallel to each other and/or comprising second connections electrically connecting the second transistors respectively to the flat portion of the third conductor, these second connections being identical and extending parallel to each other. This makes it possible to simplify the power module by standardizing the connections and thus reduce its manufacturing cost.
[0022] De façon optionnelle également, chacun des premiers transistors comporte une borne Kelvin et le circuit de commande comporte une première piste Kelvin à laquelle toutes les bornes Kelvin des premiers transistors sont connectées et/ou chacun des deuxièmes transistors comporte une borne Kelvin et le circuit de commande comporte une deuxième piste Kelvin à laquelle toutes les bornes Kelvin des deuxièmes transistors sont connectées. [0022] Also optionally, each of the first transistors comprises a Kelvin terminal and the control circuit comprises a first Kelvin track to which all of the Kelvin terminals of the first transistors are connected and/or each of the second transistors comprises a Kelvin terminal and the control circuit comprises a second Kelvin track to which all of the Kelvin terminals of the second transistors are connected.
[0023] De façon optionnelle également, le circuit de commande comporte une première broche Kelvin et une résistance connectée entre la première piste Kelvin et la première broche Kelvin et/ou une deuxième broche Kelvin et une résistance connectée entre la deuxième piste Kelvin et la deuxième broche Kelvin. La résistance permet de réduire les inductances parasites dans la boucle de contrôle et d’avoir un meilleur équilibre dans les commutations des transistors. [0023] Also optionally, the control circuit comprises a first Kelvin pin and a resistor connected between the first Kelvin track and the first Kelvin pin and/or a second Kelvin pin and a resistor connected between the second Kelvin track and the second Kelvin pin. The resistor makes it possible to reduce parasitic inductances in the control loop and to have a better balance in the switching of the transistors.
[0024] De façon optionnelle également, chacun des premiers transistors comporte une borne de commande et le circuit de commande comporte une première broche de commande globale et, pour chaque borne de commande des premiers transistors, une résistance respective connectée entre la borne de commande considérée et la première broche de commande globale et/ou chacun des deuxièmes transistors comporte une borne de commande et le circuit de commande comporte une deuxième broche de commande globale et, pour chaque borne de commande des deuxièmes transistors, une résistance respective connectée entre la borne de commande considérée et la deuxième broche de commande globale. La résistance permet de réduire les inductances parasites dans la boucle de contrôle et d’avoir un meilleur équilibre dans les commutations des transistors. [0024] Also optionally, each of the first transistors comprises a control terminal and the control circuit comprises a first global control pin and, for each control terminal of the first transistors, a respective resistor connected between the control terminal considered and the first global control pin and/or each of the second transistors comprises a control terminal and the control circuit comprises a second global control pin and, for each control terminal of the second transistors, a respective resistor connected between the control terminal considered and the second global control pin. The resistor makes it possible to reduce the parasitic inductances in the control loop and to have a better balance in the switching of the transistors.
[0025] De façon optionnelle également, le module de puissance comporte un substrat dit de commande, par exemple plaqué contre la deuxième portion du troisième conducteur, sur lequel le circuit de commande s’étend. [0025] Also optionally, the power module comprises a so-called control substrate, for example pressed against the second portion of the third conductor, on which the control circuit extends.
[0026] De façon optionnelle également, le circuit de commande comporte de l’électronique de commande, comme par exemple un pilote des transistors de côté haut et/ou un pilote des transistors de côté bas. [0026] Also optionally, the control circuit comprises control electronics, such as a high-side transistor driver and/or a low-side transistor driver.
Brève description des figures Brief description of the figures
[0027] L’invention sera mieux comprise à l’aide de la description qui va suivre, donnée uniquement à titre d’exemple et faite en se référant aux dessins annexés dans lesquels : la figure 1 est une vue schématique d’un véhicule terrestre à moteur dans lequel l’invention peut être mise en œuvre, la figure 2 est un schéma électrique d’un circuit à commutation pouvant être utilisé dans le véhicule terrestre à moteur de la figure 1 , la figure 3 est une vue en trois dimensions d’un premier exemple de module de puissance selon l’invention, la figure 4 est une vue de dessus du module de puissance de la figure 3, la figure 5 est vue de dessus d’un deuxième exemple de module de puissance selon l’invention, la figure 6 est une vue en trois dimensions d’un type de rubans de connexion d’interrupteurs de côté bas du module de puissance, et la figure 7 est une vue en trois dimensions d’un clip de connexion d’interrupteurs de côté bas du module de puissance. Description détai liée de l’invention [0027] The invention will be better understood with the aid of the following description, given solely by way of example and with reference to the accompanying drawings in which: FIG. 1 is a schematic view of a land motor vehicle in which the invention can be implemented, FIG. 2 is an electrical diagram of a switching circuit that can be used in the land motor vehicle of FIG. 1, FIG. 3 is a three-dimensional view of a first example of a power module according to the invention, FIG. 4 is a top view of the power module of FIG. 3, FIG. 5 is a top view of a second example of a power module according to the invention, FIG. 6 is a three-dimensional view of a type of low-side switch connection strips of the power module, and FIG. 7 is a three-dimensional view of a low-side switch connection clip of the power module. Related detailed description of the invention
[0028] En référence à la figure 1 , un véhicule terrestre à moteur 100, dans lequel l’invention peut être mise en œuvre, va à présent être décrit. [0028] With reference to FIG. 1, a motorized land vehicle 100, in which the invention can be implemented, will now be described.
[0029] Le véhicule 100 comporte une ou plusieurs roues motrices 102 conçues pour mettre le véhicule 100 en mouvement. [0029] The vehicle 100 comprises one or more drive wheels 102 designed to put the vehicle 100 in motion.
[0030] Pour entraîner la ou les roues motrices 102, l’engin de mobilité 100 comprend en outre un dispositif d’entraînement électrique 104 et une source de tension continue 106, telle qu’une batterie, conçue pour alimenter électriquement le dispositif d’entraînement électrique 104. [0030] To drive the drive wheel(s) 102, the mobility device 100 further comprises an electric drive device 104 and a direct voltage source 106, such as a battery, designed to electrically power the electric drive device 104.
[0031] Le dispositif d’entraînement électrique 104 comporte une machine électrique 108, en particulier polyphasée, par exemple triphasée, connectée à la ou aux roues motrices 102 pour entraîner ces dernières. Le dispositif d’entraînement électrique 104 comporte en outre un convertisseur de tension électrique 110 alternatif-continu connecté entre la source de tension continue 106 et la machine électrique 108. Le convertisseur de tension électrique 110 est configuré pour transférer de la puissance électrique entre la source de tension continue 106 et la machine électrique 108. Par exemple, le convertisseur alternatif-continu 110 est configuré pour fonctionner en onduleur pour transférer de la puissance électrique depuis la source de tension continue 106 jusqu’à la machine électrique 108 fonctionnant en tant que moteur électrique. Le convertisseur alternatif-continu 110 peut également être configuré pour fonctionner en redresseur pour transférer de la puissance électrique depuis la machine électrique 108 fonctionnant en tant que générateur électrique jusqu’à la source de tension continue 106, par exemple pour recharger cette dernière. [0031] The electric drive device 104 comprises an electric machine 108, in particular polyphase, for example three-phase, connected to the drive wheel(s) 102 to drive the latter. The electric drive device 104 further comprises an AC-DC electric voltage converter 110 connected between the DC voltage source 106 and the electric machine 108. The electric voltage converter 110 is configured to transfer electric power between the DC voltage source 106 and the electric machine 108. For example, the AC-DC converter 110 is configured to operate as an inverter to transfer electric power from the DC voltage source 106 to the electric machine 108 operating as an electric motor. The AC-DC converter 110 may also be configured to operate as a rectifier to transfer electrical power from the electrical machine 108 operating as an electrical generator to the DC voltage source 106, for example to recharge the latter.
[0032] En référence à la figure 2, le convertisseur de tension électrique 110 comprend un circuit à commutation 202 avec des interrupteurs HS, LS. Ces derniers sont des interrupteurs à transistors, tels que des transistors à effet de champ à grille métal-oxyde (de l’anglais « Metal Oxide Semiconductor Field Effect Transistor » également désigné par l’acronyme MOSFET) ou bien des transistors à effet de champ à grille métal-oxyde silicium (de l’anglais « Silicon Metal Oxide Semiconductor Field Effect Transistor » également désigné par l’acronyme Si MOSFET) ou bien des transistors à effet de champ à grille métal-oxyde au carbure de silicium (de l’anglais « Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor » également désigné par l’acronyme SiC MOSFET) ou bien des transistors bipolaires à grille isolée (de l’anglais « Insulated Gate Bipolar Transistor » également désigné par l’acronyme IGBT) ou bien des transistors à effet de champ au nitrure de gallium (de l’anglais « Gallium Nitride Field Effect Transistor » également désigné par l’acronyme GaN FET). [0032] With reference to FIG. 2, the electrical voltage converter 110 comprises a switching circuit 202 with switches HS, LS. The latter are transistor switches, such as metal-oxide gate field effect transistors (also referred to by the acronym MOSFET) or silicon metal-oxide gate field effect transistors (also referred to by the acronym Si MOSFET) or silicon carbide metal-oxide gate field effect transistors (also referred to by the acronym SiC MOSFET) or insulated gate bipolar transistors (also referred to by the acronym the acronym IGBT) or gallium nitride field effect transistors (also known by the acronym GaN FET).
[0033] Le circuit à commutation 202 comporte au moins un bras de commutation 206, par exemple, autant de bras de commutation 206 que de phases statoriques de la machine électrique 108. Chaque bras de commutation 206 comprend un interrupteur de côté haut HS et un interrupteur de côté bas LS reliés l’un à l’autre en un point milieu. Chaque bras de commutation 206 est connectées entre des bornes +, - de la source de tension continue 106. Le point milieu est connecté à une des phases statoriques de la machine électrique 108. [0033] The switching circuit 202 comprises at least one switching arm 206, for example, as many switching arms 206 as there are stator phases of the electric machine 108. Each switching arm 206 comprises a high side switch HS and a low side switch LS connected to each other at a midpoint. Each switching arm 206 is connected between terminals +, - of the DC voltage source 106. The midpoint is connected to one of the stator phases of the electric machine 108.
[0034] Chaque bras de commutation 206 est ainsi configuré pour commuter entre deux configurations. Dans une première configuration, l’interrupteur de côté haut HS est fermé et l’interrupteur de côté bas LS est ouvert, de sorte qu’une tension continue est essentiellement appliquée au point milieu et donc à la phase statorique qui y est connectée. Dans une deuxième configuration, l’interrupteur de côté haut HS est ouvert et l’interrupteur de côté bas LS est fermé, de sorte qu’une tension nulle est appliquée au point milieu et donc à la phase statorique associée. [0034] Each switching arm 206 is thus configured to switch between two configurations. In a first configuration, the high side switch HS is closed and the low side switch LS is open, such that a DC voltage is essentially applied to the midpoint and thus to the stator phase connected thereto. In a second configuration, the high side switch HS is open and the low side switch LS is closed, such that a zero voltage is applied to the midpoint and thus to the associated stator phase.
[0035] Le convertisseur de tension électrique 110 comporte en outre une électronique 208 de commande des interrupteurs HS, LS, généralement au travers de pilotes respectifs (de l’anglais « drivers ») non représentés. L’électronique de commande 208 est par exemple conçu pour commander les interrupteurs HS, LS afin de réguler des courants de phase transmis aux phases statoriques depuis les points milieux. [0035] The electrical voltage converter 110 further comprises electronics 208 for controlling the switches HS, LS, generally via respective drivers (not shown). The control electronics 208 is for example designed to control the switches HS, LS in order to regulate phase currents transmitted to the stator phases from the midpoints.
[0036] En référence à la figure 3, un exemple de module de puissance 300 implémentant un des bras de commutation 206 va à présent être décrit. [0036] Referring to FIG. 3, an exemplary power module 300 implementing one of the switching arms 206 will now be described.
[0037] Par soucis de clarté, les positions des éléments du module de puissance 300 seront décrits par la suite en référence à un trièdre direct formant un repère X, Y, Z, dans lequel la direction X est une direction droite gauche, la direction Y est une direction avant arrière, et la direction Z est une direction verticale. [0037] For the sake of clarity, the positions of the elements of the power module 300 will be described hereinafter with reference to a direct trihedron forming a reference frame X, Y, Z, in which the X direction is a right-left direction, the Y direction is a front-rear direction, and the Z direction is a vertical direction.
[0038] Le module de puissance 300 comporte tout d’abord plusieurs conducteurs électriques : un premier conducteur destiné à être connecté à la borne positive + de la source de tension 106 et appelé de ce fait conducteur positif C+, un deuxième conducteur destiné à être connecté à la borne négative - de la source de tension 106 et appelé de ce fait conducteur positif C-, et un troisième conducteur destiné à être connecté à une des phases et à présenter une tension alternative et appelé de ce fait conducteur alternatif C-. [0038] The power module 300 firstly comprises several electrical conductors: a first conductor intended to be connected to the positive terminal + of the voltage source 106 and therefore called positive conductor C+, a second conductor intended to be connected to the negative terminal - of the voltage source 106 and therefore called the positive conductor C-, and a third conductor intended to be connected to one of the phases and to present an alternating voltage and therefore called the alternating conductor C-.
[0039] Les conducteurs C+, C-, C- sont agencés pour présenter la succession suivante selon une direction D1 : une portion P-1 du conducteur négatif C-, puis une portion P-2 du conducteur de phase C-, puis au moins une portion P+1 , P+2 du conducteur positif C+, puis une autre portion P-1 du conducteur de phase C~. Par exemple, comme dans l’exemple illustré, la direction D1 est parallèle à la direction Y. Ainsi, les portions précédentes se succèdent de l’arrière vers l’avant. [0039] The conductors C+, C-, C- are arranged to present the following succession in a direction D1: a portion P-1 of the negative conductor C-, then a portion P-2 of the phase conductor C-, then at least one portion P+1, P+2 of the positive conductor C+, then another portion P-1 of the phase conductor C~. For example, as in the example illustrated, the direction D1 is parallel to the direction Y. Thus, the preceding portions follow one another from the back to the front.
[0040] Par exemple, comme dans l’exemple illustré, les portions P-1 , P-2, P+1 , P+2, P-1 sont planes et s’étendent parallèlement les unes autres, c’est-à-dire parallèlement au plan horizontal X,Y. Par exemple, ces portions P-1 , P-2, P+1 , P+2, P-1 sont coplanaires comme dans l’exemple illustré. Alternativement, ces portions P- 1 , P-2, P+1 , P+2, P-1 pourraient être décalées en hauteur de quelques dixièmes de millimètres. [0040] For example, as in the illustrated example, the portions P-1, P-2, P+1, P+2, P-1 are planar and extend parallel to each other, i.e. parallel to the horizontal plane X,Y. For example, these portions P-1, P-2, P+1, P+2, P-1 are coplanar as in the illustrated example. Alternatively, these portions P-1, P-2, P+1, P+2, P-1 could be offset in height by a few tenths of a millimeter.
[0041] Le conducteur alternatif C- comporte en outre une portion de liaison PL- reliant les portions P~i, P-2 en passant entre les portions P+i, P+2 du premier conducteur C+. Par exemple, comme dans l’exemple illustré, la portion de liaison PL- est plane et parallèle aux autres portions P-1 , P-2, P+1 , P+2, P-1 , par exemple coplanaire avec ces dernières. [0041] The alternating conductor C- further comprises a connecting portion PL- connecting the portions P~i, P- 2 by passing between the portions P+i, P+ 2 of the first conductor C+. For example, as in the example illustrated, the connecting portion PL- is planar and parallel to the other portions P-1, P-2, P+1, P+2, P-1, for example coplanar with the latter.
[0042] L’interrupteur de côté bas LS est formé de plusieurs transistors de côté bas TLS plaqués contre la portion P-2 du conducteur alternatif C- et connectés électriquement à la portion P-1 du conducteur négatif C-, par exemple par des rubans RUBLS respectifs avec par exemple deux zones de contact s’étendant selon la direction Y ou bien selon la direction X (voir la figure 6) sur le transistor de côté bas TLS connecté, ou bien par un ou plusieurs clips connectant chacun plusieurs transistors de côté bas TLS (voir la figure 7, en particulier la référence CLP). [0042] The low-side switch LS is formed of several low-side transistors TLS pressed against the portion P-2 of the alternating conductor C- and electrically connected to the portion P-1 of the negative conductor C-, for example by respective RUBLS strips with for example two contact zones extending in the Y direction or in the X direction (see FIG. 6) on the connected low-side transistor TLS, or by one or more clips each connecting several low-side transistors TLS (see FIG. 7, in particular the reference CLP).
[0043] L’interrupteur de côté haut HS est formé de plusieurs transistors de côté haut THS plaqués contre le conducteur positif C+ et connectés électriquement au conducteur alternatif C-, par exemple par des rubans RUBHS respectifs (avec par exemple deux zones de contact comme pour les rubans RUBLS) ou bien par un ou plusieurs clips connectant chacun plusieurs transistors de côté haut THS (comme pour les transistors de côté bas TLS). Par exemple, comme dans l’exemple illustré sur la figure 3, une partie des transistors de côté haut THS (par exemple, la moitié) est plaquée contre la portion P+1 du conducteur positif C+, tandis que l’autre partie des transistors de côté haut THS (par exemple, l’autre moitié) est plaquée contre la portion P+2 du conducteur positif C+. [0043] The high side switch HS is formed by several high side transistors THS pressed against the positive conductor C+ and electrically connected to the alternating conductor C-, for example by respective RUBHS strips (with for example two contact areas as for the RUBLS strips) or by one or more clips each connecting several high side transistors THS (as for the low side transistors TLS). For example, as in the example illustrated in FIG. 3, a part of the high side transistors THS (for example, half) is pressed against the P+1 portion of the positive conductor C+, while the other part of the high-side transistors THS (e.g. the other half) is pressed against the P+2 portion of the positive conductor C+.
[0044] Afin de connecter le module de puissance 300, le conducteur positif C+ comporte en outre au moins une borne dite positive B+1 , B+2, le conducteur négatif C- comporte en outre au moins une borne dite négative B-, et le conducteur alternatif C- comporte au moins une borne dite alternative B~. [0044] In order to connect the power module 300, the positive conductor C+ further comprises at least one terminal called positive B+1, B+2, the negative conductor C- further comprises at least one terminal called negative B-, and the alternating conductor C- comprises at least one terminal called alternating B~.
[0045] Par exemple, comme dans l’exemple illustré, deux bornes positives B+1 , B+2 sont prévues. Ces deux bornes positives B+1 , B+2 sont respectivement connectées électriquement aux portions P+1 , P+2 du conducteur positif C+. Pour cela le conducteur positif C+ comporte deux portions de liaison PL+1 , PL+2 s’étendant vers l’arrière depuis respectivement les portions P+1 , P+2. Ces portions de liaison PL+1 , PL+2 contournent la portion P-2 du conducteur alternatif C- par la droite et la gauche. Par exemple, comme dans l’exemple illustré, les portions de liaison PL+1 , PL+2 sont planes et parallèles aux autres portions P-1 , P-2, P+1 , P+2, P-1 , par exemple coplanaire avec ces dernières. [0045] For example, as in the illustrated example, two positive terminals B+1, B+2 are provided. These two positive terminals B+1, B+2 are respectively electrically connected to the portions P+1, P+2 of the positive conductor C+. For this, the positive conductor C+ comprises two connecting portions PL+1, PL+2 extending rearward from the portions P+1, P+2 respectively. These connecting portions PL+1, PL+2 bypass the portion P-2 of the alternating conductor C- to the right and the left. For example, as in the illustrated example, the connecting portions PL+1, PL+2 are planar and parallel to the other portions P-1, P-2, P+1, P+2, P-1, for example coplanar with the latter.
[0046] Par exemple, comme dans l’exemple illustré, les bornes positives B+1 , B+2 comportent respectivement des pattes de fixation respectivement rapportées sur les portions de liaison PL+1 , PL+2, la borne négative B- comporte une patte de fixation rapportée sur la portion P-1 du conducteur négatif C-, et/ou la borne alternative B- comporte une patte de fixation rapportée sur la portion P-1 du conducteur alternatif C~. [0046] For example, as in the example illustrated, the positive terminals B+1, B+2 respectively comprise fixing lugs respectively attached to the connection portions PL+1, PL+2, the negative terminal B- comprises a fixing lug attached to the portion P-1 of the negative conductor C-, and/or the alternating terminal B- comprises a fixing lug attached to the portion P-1 of the alternating conductor C~.
[0047] Par exemple, le module de commande 300 comporte un substrat SUB portant les portions P-1 , P-2, P+1 , P+2, P-1 , ainsi que les portions PL-, PL+1 , PL+2 si présentes. Par exemple, le substrat SUB et les portions sont formées par un substrat à cuivre directement lié (de l’anglais « Direct Bonded Copper substrate » ou « DBC substrate ») ou bien un substrat à métal actif brasé (de l’anglais « Active Metal Brazed substrate » ou « AMB substrate »). Alternativement, les conducteurs C+, C-, C- pourraient être formés avec un cadre conducteur rigide (de l’anglais « leadframe ») et ne pas nécessiter du substrat. [0047] For example, the control module 300 comprises a substrate SUB carrying the portions P-1, P-2, P+1, P+2, P-1, as well as the portions PL-, PL+1, PL+2 if present. For example, the substrate SUB and the portions are formed by a directly bonded copper substrate (from the English “Direct Bonded Copper substrate” or “DBC substrate”) or else an active metal brazed substrate (from the English “Active Metal Brazed substrate” or “AMB substrate”). Alternatively, the conductors C+, C-, C- could be formed with a rigid conductive frame (from the English “leadframe”) and not require a substrate.
[0048] En référence à la figure 4, le module de puissance 300 comporte en outre, entre les premiers transistors TLS et les deuxièmes transistors THS, un circuit de commande CMD des transistors TLS, THS. Le module de puissance 300 comporte par exemple un substrat dit de commande SUB’, par exemple plaqué contre la portion P~2 du conducteur alternatif C~, sur lequel le circuit de commande CMD s’étend. En particulier lorsque le substrat de commande SUB’ comporte une céramique couche épaisse (de l’anglais « thick film ») ou une matière organique isolante de type circuit imprimé (de l’anglais « PCB »), ce substrat de commande SUB’ est naturellement isolé et peut ainsi s’étendre sur une ou plusieurs portions voisines, par exemple la portion PL+1 et/ou PL+2. [0048] With reference to FIG. 4, the power module 300 further comprises, between the first transistors TLS and the second transistors THS, a control circuit CMD for the transistors TLS, THS. The power module 300 comprises, for example, a substrate called a control substrate SUB', for example pressed against the portion P~2 of the alternating conductor C~, on which the control circuit CMD extends. In particular when the control substrate SUB' comprises a thick film ceramic or an insulating organic material of the printed circuit type (PCB), this control substrate SUB' is naturally insulated and can thus extend over one or more neighboring portions, for example the portion PL+1 and/or PL+2.
[0049] Par exemple, comme dans l’exemple illustré, chacun des transistors de côté bas TLS et/ou des transistors de côté haut THS comporte une borne Kelvin KLS, KHS, par exemple une borne de source Kelvin. Dans ce cas, le circuit de commande CMD comporte par exemple une piste Kelvin de côté bas PKLS à laquelle toutes les bornes Kelvin des transistors de côté bas TLS sont connectées et/ou une piste Kelvin de côté haut PKHS à laquelle toutes les bornes Kelvin des transistors de côté haut THS sont connectées. [0049] For example, as in the illustrated example, each of the low-side transistors TLS and/or the high-side transistors THS comprises a Kelvin terminal KLS, KHS, for example a Kelvin source terminal. In this case, the control circuit CMD comprises for example a low-side Kelvin track PKLS to which all the Kelvin terminals of the low-side transistors TLS are connected and/or a high-side Kelvin track PKHS to which all the Kelvin terminals of the high-side transistors THS are connected.
[0050] Toujours par exemple, comme dans l’exemple illustré, le circuit de commande CMD comporte une broche Kelvin de côté bas BKLS et une résistance RKLS connectée entre la piste Kelvin de côté bas PKLS et la broche Kelvin de côté bas et/ou le circuit de commande CMD comporte une broche Kelvin de côté haut BKHS et une résistance RKHS connectée entre la piste Kelvin de côté haut PKHS et la broche Kelvin de côté haut BKHS. [0050] Still for example, as in the illustrated example, the control circuit CMD comprises a low side Kelvin pin BKLS and a resistor RKLS connected between the low side Kelvin track PKLS and the low side Kelvin pin and/or the control circuit CMD comprises a high side Kelvin pin BKHS and a resistor RKHS connected between the high side Kelvin track PKHS and the high side Kelvin pin BKHS.
[0051] Toujours par exemple, comme dans l’exemple décrit, chacun des transistors de côté bas TLS comporte une borne de commande BCLS, par exemple une borne de grille, et le circuit de commande CMD comporte une broche de commande globale de côté bas BGLS et, pour chaque transistor de côté bas TLS, une résistance RCLS respective connectée entre sa borne de commande BCLS et la broche de commande globale de côté bas BGLS. De manière similaire, par exemple, chacun des transistors de côté haut THS comporte une borne de commande BCHS et le circuit de commande CMD comporte une broche de commande globale de côté haut BGHS et, pour chaque transistor de côté haut THS, une résistance RCHS respective connectée entre sa borne de commande BCLS et la broche de commande globale de côté haut BGHS. [0051] Still for example, as in the example described, each of the low-side transistors TLS comprises a control terminal BCLS, for example a gate terminal, and the control circuit CMD comprises a global low-side control pin BGLS and, for each low-side transistor TLS, a respective resistor RCLS connected between its control terminal BCLS and the global low-side control pin BGLS. Similarly, for example, each of the high-side transistors THS comprises a control terminal BCHS and the control circuit CMD comprises a global high-side control pin BGHS and, for each high-side transistor THS, a respective resistor RCHS connected between its control terminal BCLS and the global high-side control pin BGHS.
[0052] Par ailleurs, tout ou partie des résistances RKLS, RKHS, RCSL, RCHS peut alors être des composants montés en surface du substrat de commande SUB’ (de l’anglais « Surface Mounted Device » ou SMD). Alternativement, tout ou partie des résistances RKLS, RKHS, RCSL, RCHS peut alors être des composants directement imprimés sur le substrat de commande SUB’ en céramique. [0052] Furthermore, all or part of the resistors RKLS, RKHS, RCSL, RCHS can then be components mounted on the surface of the control substrate SUB' (from the English "Surface Mounted Device" or SMD). Alternatively, all or part of the RKLS, RKHS, RCSL, RCHS resistors can then be components directly printed on the ceramic SUB' control substrate.
[0053] Les broches BKHS, BKLS, BGHS, BGLS se projettent par exemple vers le haut. Ainsi, il peut être prévu que l’électronique de commande 208 s’étende au- dessus du circuit de commande CMD, avec par exemple un pilote de côté bas pour les transistors de côté bas TLS et un pilote de côté haut pour les transistors de côté haut THS. Alternativement, tout ou partie de l’électronique de commande pourrait faire partie du circuit de commande CMD, par exemple en étant intercalée entre les résistances RCLS, RCHS et les broches de commande BGLS, BGHS. [0053] The pins BKHS, BKLS, BGHS, BGLS project upwards for example. Thus, it can be provided that the control electronics 208 extend above the control circuit CMD, with for example a low-side driver for the low-side transistors TLS and a high-side driver for the high-side transistors THS. Alternatively, all or part of the control electronics could be part of the control circuit CMD, for example by being interposed between the resistors RCLS, RCHS and the control pins BGLS, BGHS.
[0054] En référence à la figure 5, un autre exemple de module de puissance 500 selon l’invention va à présent être décrit. [0054] With reference to FIG. 5, another example of a power module 500 according to the invention will now be described.
[0055] Le module de puissance 500 est similaire avec le module de puissance 300, si ce n’est pour les différences qui vont être détaillées. [0055] The power module 500 is similar to the power module 300, except for the differences which will be detailed.
[0056] Le conducteur positif C+ comporte une seule portion P+1 sur laquelle tous les transistors de côté haut THS sont plaqués. Pour relier ensemble les deux portions P~1 , P-2 du conducteur alternatif C-, la partie de liaison PL- passe au-dessus de la portion P+1 du conducteur positif C+. [0056] The positive conductor C+ has a single portion P+1 on which all the high side transistors THS are plated. To connect together the two portions P~1, P-2 of the alternating conductor C-, the connecting part PL- passes above the portion P+1 of the positive conductor C+.
[0057] Par ailleurs, les portions de liaison PL+1 , PL+2 passent au-dessus de la portion P-2 du conducteur alternatif C- et de la portion P-1 du conducteur négatif C-. Cette solution permet à la portion P+1 de présenter une grande surface pour plaquer les transistors de côté haut THS. [0057] Furthermore, the connecting portions PL+1, PL+2 pass above the portion P-2 of the alternating conductor C- and the portion P-1 of the negative conductor C-. This solution allows the portion P+1 to have a large surface area for plating the high-side transistors THS.
[0058] En outre, le conducteur positif C+ comporte par exemple une troisième portion de liaison PL+3 reliant les deux autres portions de liaison PL+1 , PL+2. [0058] Furthermore, the positive conductor C+ comprises, for example, a third connection portion PL+3 connecting the two other connection portions PL+1, PL+2.
[0059] En conclusion, il apparaît clairement qu’un tel que celui décrit précédemment permet un placement central du circuit de commande, tout en gardant des connexions simples avec les transistors. [0059] In conclusion, it clearly appears that such as that described above allows a central placement of the control circuit, while keeping simple connections with the transistors.
[0060] On notera par ailleurs que l’invention n’est pas limitée aux modes de réalisation décrits précédemment. Il apparaîtra en effet à l’homme de l'art que diverses modifications peuvent être apportées aux modes de réalisation décrits ci- dessus, à la lumière de l'enseignement qui vient de lui être divulgué. [0060] It will also be noted that the invention is not limited to the embodiments described above. It will indeed appear to those skilled in the art that various modifications can be made to the embodiments described above, in light of the teaching which has just been disclosed to them.
[0061] Dans la présentation détaillée de l’invention qui est faite précédemment, les termes utilisés ne doivent pas être interprétés comme limitant l’invention aux modes de réalisation exposés dans la présente description, mais doivent être interprétés pour y inclure tous les équivalents dont la prévision est à la portée de l'homme de l'art en appliquant ses connaissances générales à la mise en œuvre de l'enseignement qui vient de lui être divulgué. [0061] In the detailed presentation of the invention given above, the terms used should not be interpreted as limiting the invention to the modes of embodiments set forth in this description, but must be interpreted to include all equivalents the prediction of which is within the reach of those skilled in the art by applying their general knowledge to the implementation of the teaching just disclosed to them.

Claims

Revendications Claims
[1] Module de puissance (300 ; 500) caractérisé en ce qu’il comporte : un premier conducteur (C+) comportant une ou plusieurs portions (P+1 ; P+1 , P+2) ; un deuxième conducteur (C-) comportant une portion (P-1 ) ; un troisième conducteur (C~) comportant des première et deuxième portions (P-1 , P-2) ; les portions des conducteurs se succédant selon une première direction (D1 ) dans l’ordre : la portion (P-1) du deuxième conducteur (C-), la deuxième portion (P-2) du troisième conducteur (C~), la ou les portions (P+1 ; P+1 , P+2) du premier conducteur (C+) et la première portion (P-1) du troisième conducteur (C~) ; un premier interrupteur formé de premiers transistors (TLS) alignés, les premiers transistors (TLS) étant plaqués contre la deuxième portion (P-2) du troisième conducteur (C~) et connectés électriquement à la portion (P- 1 ) du deuxième conducteur (C-) ; un deuxième interrupteur formé de deuxièmes transistors (THS) alignés, les deuxièmes transistors (THS) étant plaqués contre la ou les portions (P+i) du premier conducteur (C+) et connectés électriquement à la première portion (P~i) du troisième conducteur (C~) ; et entre les premiers transistors (TLS) et les deuxièmes transistors (THS), un circuit de commande (CMD) des transistors (TLS, THS). [1] Power module (300; 500) characterized in that it comprises: a first conductor (C+) comprising one or more portions (P+1; P+1, P+2); a second conductor (C-) comprising a portion (P-1); a third conductor (C~) comprising first and second portions (P-1, P-2); the portions of the conductors succeeding one another in a first direction (D1) in the order: the portion (P-1) of the second conductor (C-), the second portion (P-2) of the third conductor (C~), the portion(s) (P+1; P+1, P+2) of the first conductor (C+) and the first portion (P-1) of the third conductor (C~); a first switch formed of aligned first transistors (TLS), the first transistors (TLS) being pressed against the second portion (P-2) of the third conductor (C~) and electrically connected to the portion (P-1) of the second conductor (C-); a second switch formed of aligned second transistors (THS), the second transistors (THS) being pressed against the portion(s) (P+i) of the first conductor (C+) and electrically connected to the first portion (P~i) of the third conductor (C~); and between the first transistors (TLS) and the second transistors (THS), a control circuit (CMD) for the transistors (TLS, THS).
[2] Module de puissance (300 ; 500) selon la revendication 1 , dans lequel les portions des conducteurs (C+, C-, C~) sont planes. [2] Power module (300; 500) according to claim 1, in which the portions of the conductors (C+, C-, C~) are flat.
[3] Module de puissance (300 ; 500) selon la revendication 1 ou 2, dans lequel les portions planes s’étendent parallèlement les unes aux autres. [3] Power module (300; 500) according to claim 1 or 2, in which the planar portions extend parallel to each other.
[4] Module de puissance (300) selon l’une quelconque des revendications 1 à 3, dans lequel le premier conducteur (C+) comporte des première et deuxième portions planes (P+1 , P+2), une partie des deuxièmes transistors (THS) étant plaquée contre la première portion plane (P+1) du premier conducteur (C+) et le reste des deuxièmes transistors (THS) étant plaqué contre la deuxième portion plane (P+2) du premier conducteur (C+), et dans lequel le troisième conducteur (C~) comporte une portion de liaison (PL-) reliant les première et deuxième portions planes (P-1 , P-2) en passant entre les première et deuxième portion planes (P+1 , P+2) du premier conducteur (C+). [4] Power module (300) according to any one of claims 1 to 3, in which the first conductor (C+) comprises first and second planar portions (P+1, P+2), a portion of the second transistors (THS) being pressed against the first planar portion (P+1) of the first conductor (C+) and the remainder of the second transistors (THS) being pressed against the second planar portion (P+2) of the first conductor (C+), and in which the third conductor (C~) comprises a connecting portion (PL-) connecting the first and second planar portions (P-1, P-2). passing between the first and second flat portions (P+1, P+2) of the first conductor (C+).
[5] Module de puissance (300) selon la revendication 4, dans lequel une moitié des deuxièmes transistors (THS) est plaquée contre la première portion plane (P+1) du premier conducteur (C+) et l’autre moitié des deuxièmes transistors (THS) est plaquée contre la deuxième portion plane (P+2) du premier conducteur (C+). [5] Power module (300) according to claim 4, in which one half of the second transistors (THS) is plated against the first planar portion (P+1) of the first conductor (C+) and the other half of the second transistors (THS) is plated against the second planar portion (P+2) of the first conductor (C+).
[6] Module de puissance (500) selon l’une quelconque des revendications 1 à 3, dans lequel les deuxièmes transistors (THS) sont plaqués contre la portion plane (P+1) du premier conducteur (P+) et dans lequel le troisième conducteur (C~) comporte une portion de liaison (PL~) reliant les première et deuxième portions planes (P~1 , P~2) en passant au-dessus de la portion plane (P+1) du premier conducteur (C+). [6] Power module (500) according to any one of claims 1 to 3, in which the second transistors (THS) are pressed against the flat portion (P+1) of the first conductor (P+) and in which the third conductor (C~) comprises a connecting portion (PL~) connecting the first and second flat portions (P~1, P~2) by passing above the flat portion (P+1) of the first conductor (C+).
[7] Module de puissance (300) selon l’une quelconque des revendications 1 à 6, dans lequel le premier conducteur (C+) comporte au moins une première borne (B+i , B+2) située avant la portion plane (P-i) du deuxième conducteur (C-) selon la première direction (D1) et, pour chaque première borne (B+i, B+2), une portion de liaison (PL+i, PL+2) reliant la portion plane (P+1) à la première borne (B+1 , B+2) considérée en passant à côté de la deuxième portion plane (P~2) du troisième conducteur (C~) et de la portion plane (P-1) du deuxième conducteur (C-). [7] Power module (300) according to any one of claims 1 to 6, in which the first conductor (C+) comprises at least one first terminal (B+i, B+ 2 ) located before the flat portion (Pi) of the second conductor (C-) in the first direction (D1) and, for each first terminal (B+i, B+ 2 ), a connecting portion (PL+i, PL+ 2 ) connecting the flat portion (P+1) to the first terminal (B+1, B+2) considered by passing next to the second flat portion (P~2) of the third conductor (C~) and the flat portion (P-1) of the second conductor (C-).
[8] Module de puissance (500) selon l’une quelconque des revendications 1 à 6, dans lequel le premier conducteur (C+) comporte au moins une première borne (B+1 , B+2) située avant la portion plane (P-1 ) du deuxième conducteur (C-) selon la première direction (D1) et, pour chaque première borne (B+1 , B+2), une portion de liaison (PL+1 , PL+2) reliant la portion plane (P+1 ) à la première borne (B+1 , B+2) considérée en passant au-dessus de la deuxième portion plane (P~2) du troisième conducteur (C~) et de la portion plane (P-1) du deuxième conducteur (C-). [8] Power module (500) according to any one of claims 1 to 6, in which the first conductor (C+) comprises at least one first terminal (B+1, B+2) located before the flat portion (P-1) of the second conductor (C-) in the first direction (D1) and, for each first terminal (B+1, B+2), a connecting portion (PL+1, PL+2) connecting the flat portion (P+1) to the first terminal (B+1, B+2) considered by passing above the second flat portion (P~2) of the third conductor (C~) and the flat portion (P-1) of the second conductor (C-).
[9] Module de puissance (300 ; 500) selon l’une quelconque des revendications 1 à 8, comportant des premières connexions (RUBLS) connectant électriquement respectivement les premiers transistors (TLS) à la portion plane (P-1 ) du deuxième conducteur (C-), ces premières connexions (RUBLS) étant identiques et s’étendant parallèlement les unes autres et/ou comportant des deuxièmes connexions (RUBHS) connectant électriquement respectivement les deuxièmes transistors (THS) à la portion plane (P~) du troisième conducteur (C~), ces deuxièmes connexions (RUBHS) étant identiques et s’étendant parallèlement les unes autres. [9] Power module (300; 500) according to any one of claims 1 to 8, comprising first connections (RUBLS) electrically connecting respectively the first transistors (TLS) to the flat portion (P-1) of the second conductor (C-), these first connections (RUBLS) being identical and extending parallel to each other and/or comprising second connections (RUBHS) electrically connecting respectively the second transistors (THS) to the flat portion (P~) of the third conductor (C~), these second connections (RUBHS) being identical and extending parallel to each other.
[10] Module de puissance (300 ; 500) selon l’une quelconque des revendications 1 à 9, dans lequel chacun des premiers transistors (TLS) comporte une borne Kelvin et dans lequel le circuit de commande (CMD) comporte une première piste Kelvin (PKLS) à laquelle toutes les bornes Kelvin des premiers transistors (TLS) sont connectées et/ou dans lequel chacun des deuxièmes transistors (THS) comporte une borne Kelvin et dans lequel le circuit de commande (CMD) comporte une deuxième piste Kelvin (PKHS) à laquelle toutes les bornes Kelvin des deuxièmes transistors (THS) sont connectées. [10] Power module (300; 500) according to any one of claims 1 to 9, in which each of the first transistors (TLS) comprises a Kelvin terminal and in which the control circuit (CMD) comprises a first Kelvin track (PKLS) to which all the Kelvin terminals of the first transistors (TLS) are connected and/or in which each of the second transistors (THS) comprises a Kelvin terminal and in which the control circuit (CMD) comprises a second Kelvin track (PKHS) to which all the Kelvin terminals of the second transistors (THS) are connected.
[11 ] Module de puissance (300 ; 500) selon la revendication 10, dans lequel le circuit de commande (CMD) comporte une première broche Kelvin (BKLS) et une résistance (RKLS) connectée entre la première piste Kelvin (PKLS) et la première broche Kelvin (BKLS) et/ou une deuxième broche Kelvin (BKHS) et une résistance (RKHS) connectée entre la deuxième piste Kelvin (PKHS) et la deuxième broche Kelvin (BKHS). [11] Power module (300; 500) according to claim 10, wherein the control circuit (CMD) comprises a first Kelvin pin (BKLS) and a resistor (RKLS) connected between the first Kelvin track (PKLS) and the first Kelvin pin (BKLS) and/or a second Kelvin pin (BKHS) and a resistor (RKHS) connected between the second Kelvin track (PKHS) and the second Kelvin pin (BKHS).
[12] Module de puissance (300 ; 500) selon l’une quelconque des revendications 1 à 11 , dans lequel chacun des premiers transistors (TLS) comporte une borne de commande et dans lequel le circuit de commande (CMD) comporte une première broche de commande globale (BCLS) et, pour chaque borne de commande des premiers transistors (TLS), une résistance (RCLS) respective connectée entre la borne de commande considérée et la première broche de commande globale (BCLS) et/ou dans lequel chacun des deuxièmes transistors (THS) comporte une borne de commande et dans lequel le circuit de commande (CMD) comporte une deuxième broche de commande globale (BCHS) et, pour chaque borne de commande des deuxièmes transistors (THS), une résistance (RCHS) respective connectée entre la borne de commande considérée et la deuxième broche de commande globale (BCHS). [12] Power module (300; 500) according to any one of claims 1 to 11, wherein each of the first transistors (TLS) comprises a control terminal and wherein the control circuit (CMD) comprises a first global control pin (BCLS) and, for each control terminal of the first transistors (TLS), a respective resistor (RCLS) connected between the control terminal in question and the first global control pin (BCLS) and/or wherein each of the second transistors (THS) comprises a control terminal and wherein the control circuit (CMD) comprises a second global control pin (BCHS) and, for each control terminal of the second transistors (THS), a respective resistor (RCHS) connected between the control terminal in question and the second global control pin (BCHS).
[13] Module de puissance (300 ; 500) selon l’une quelconque des revendications 1 à 12, comportant un substrat dit de commande (SUB’), par exemple plaqué contre la deuxième portion (P~2) du troisième conducteur (P~), sur lequel le circuit de commande (CMD) s’étend. [14] Module de puissance (300 ; 500) selon l’une quelconque des revendications 1 à 13, dans lequel le circuit de commande (CMD) comporte de l’électronique de commande, comme par exemple un pilote des transistors de côté haut (THS) et/ou un pilote des transistors de côté bas (TLS). [13] Power module (300; 500) according to any one of claims 1 to 12, comprising a so-called control substrate (SUB'), for example pressed against the second portion (P~2) of the third conductor (P~), on which the control circuit (CMD) extends. [14] Power module (300; 500) according to any one of claims 1 to 13, in which the control circuit (CMD) comprises control electronics, such as for example a driver of the high side transistors (THS) and/or a driver of the low side transistors (TLS).
PCT/EP2024/058747 2023-03-31 2024-03-29 Power module WO2024200805A1 (en)

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Citations (7)

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WO2022017789A1 (en) * 2020-07-21 2022-01-27 Danfoss Silicon Power Gmbh Switching components
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US20180183321A1 (en) * 2015-06-23 2018-06-28 Tm4 Inc. Physical topology for a power converter
WO2020146204A1 (en) * 2019-01-10 2020-07-16 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US20220263425A1 (en) * 2019-07-24 2022-08-18 Hitachi Astemo, Ltd. Electric circuit device
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