WO2024187941A1 - Packaging structure and forming method - Google Patents

Abstract

Disclosed in the present invention are a packaging structure and a forming method. The packaging structure comprises: a redistribution structure and a chip; the redistribution structure is provided with an insulator and a plurality of patterned metal layers embedded inside the insulator; at least one patterned metal layer is provided with a wiring line and an inductance line forming an inductance coil; the redistribution structure further comprises magnetic thin film layers; in the thickness direction of the redistribution structure, the magnetic thin film layers are arranged on at least one side of the inductance coils; and the chip is arranged on one side of the redistribution structure in the thickness direction and is electrically connected to the wiring lines. The embodiments of the present invention combine the inductance coils with the redistribution process to package the inductance coils inside the insulator of the redistribution structure, so as to achieve integration of the inductance coils and the chip packaging structure, and provide the magnetic thin film layers to eliminate performance reduction of the inductance coils after the integration, thus improving the integration level of the packaging structure, and reducing the size of the packaging structure after packaging.

Description

Packaging structure and forming method Technical Field

The present invention relates to the technical field of chip packaging, in particular to a packaging structure and a forming method.

Background Art

With the continuous evolution of advanced packaging technology, chiplet packaging is becoming more and more widely used. Through chiplet technology, heterogeneous or homogeneous chips can be combined to ultimately achieve functional superposition or microsystem integration.

During chiplet packaging, inductor devices are generally attached to a substrate or a printed circuit board as discrete devices. This installation method of inductor devices wastes packaging area and increases the size of the package structure after packaging.

Summary of the invention

The purpose of the present invention is to provide a packaging structure to solve the deficiencies in the prior art. It can combine the inductor coil with the chip rewiring process without affecting the performance of the inductor coil, thereby improving the integration of the chip packaging structure and reducing the overall size of the packaging structure.

The packaging structure provided by the present invention comprises: a rewiring structure having an insulator and a plurality of patterned metal layers embedded in the insulator, at least one of the patterned metal layers having a wiring circuit and an inductor circuit forming an inductor coil; the rewiring structure further comprises a magnetic film layer, and in the thickness direction of the rewiring structure, the magnetic film layer is arranged on at least one side of the inductor coil;

The chip is arranged on one side of the rewiring structure along the thickness direction and is electrically connected to the wiring line.

Furthermore, in the thickness direction of the rewiring structure, the position of the inductor coil is opposite to the position of the magnetic film layer.

Furthermore, the magnetic film layer is embedded in the insulator, and the magnetic film layer and the inductor coil are separated by a portion of the insulator.

Furthermore, the insulator has a first surface and a second surface disposed in opposite directions; the magnetic film layer is disposed on at least one of the first surface and the second surface.

Furthermore, the magnetic film layer is provided with at least two layers, and the inductor coil is provided between the two magnetic film layers.

Furthermore, the inductor coil is also provided with at least two layers;

In the thickness direction of the rewiring structure, the inductor coils and the magnetic film layers are arranged alternately.

Furthermore, the magnetic film layer is a superposition of one or more of an iron-containing metal film layer, a nickel-containing metal film layer, a cobalt-containing metal film layer, an iron-nickel alloy film layer, an iron-cobalt alloy film layer, a nickel-cobalt alloy film layer, or an iron-nickel-cobalt alloy film layer.

Furthermore, the packaging structure further comprises a metal bump, the metal bump is arranged on a side of the rewiring structure away from the chip, and the metal bump is electrically connected to the wiring line;

The packaging structure also has an inductor bump, which is arranged on a side of the rewiring structure away from the chip, and is electrically connected to the inductor coil; the inductor coil and the wiring line are separated by a portion of the insulator.

Further, the chip includes a first chip and a second chip arranged in parallel on one side of the rewiring structure;

The packaging structure further includes:

A bridge chip, arranged on a side of the rewiring structure away from the chip and electrically connected to the first chip and the second chip respectively;

A bridge chip protection layer is disposed on the second surface of the insulator and covers the bridge chip, and a protection layer through hole penetrating the bridge chip protection layer is disposed on the bridge chip protection layer;

A conductive bump is disposed in the through hole of the protection layer and electrically connected to the wiring line.

Furthermore, the packaging structure further comprises a metal bump, the metal bump is arranged on a side of the bridge chip protection layer away from the insulator, and the metal bump is electrically connected to the conductive bump.

Furthermore, the packaging structure further includes:

A bottom rewiring layer is arranged on a side of the bridge chip protection layer away from the insulator and comprises a bottom insulating layer and a bottom metal layer arranged in the bottom insulating layer;

The metal bumps and the conductive bumps are arranged opposite to each other at two sides of the bottom redistribution layer and are electrically connected through the bottom metal layer.

Another embodiment of the present invention further discloses a method for forming the packaging structure, comprising the following steps:

Providing a carrier substrate, and disposing a bonding layer on one side of the carrier substrate;

The rewiring structure is formed on a side of the bonding layer away from the carrier substrate, wherein the rewiring structure comprises an insulator and a plurality of patterned metal layers embedded in the insulator, and at least one of the patterned metal layers comprises a wiring circuit and an inductor circuit forming an inductor coil;

electrically connecting the chip to the wiring line;

The carrier substrate and the bonding layer are removed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a schematic structural diagram of a first type of packaging structure of the present invention;

FIG2 is a schematic structural diagram of a second type of packaging structure of the present invention;

3A-3E are schematic diagrams showing the formation process of the first type of packaging structure of the present invention;

4A-4G are schematic diagrams showing the formation process of the second type of packaging structure of the present invention;

Description of reference numerals: Description of reference numerals: 1-rewiring structure, 11-insulator, 111-first surface, 112-second surface, 12-patterned metal layer, 121-wiring line, 122-inductor coil, 123-coil connecting portion, 13-magnetic film layer,

2-chip, 21-first chip, 22-second chip,

3-metal bump, 4-inductor bump, 5-conductive column, 6-filling layer, 7-first protective layer, 8-bridge chip, 9-bridge chip protective layer, 90-protective layer through hole, 10-conductive bump, 20-bottom rewiring layer, 201-bottom insulation layer, 202-bottom metal layer,

100-carrying substrate, 200-bonding layer.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments or examples to implement different features of the present invention. The following describes embodiments of specific components and their arrangements to illustrate the present invention. Of course, these embodiments are only examples and should not be used to limit the scope of the present invention. For spatially related terms, such as "upper", "lower" and similar terms, it is to facilitate the description of the relationship between one element or feature and another element or feature in the diagram. In addition to the orientations shown in the accompanying drawings, these spatially related terms are intended to include different orientations of the device in use or operation. The device may be turned to different orientations (rotated 90 degrees or other orientations), and the spatially related words used here may also be interpreted in the same way.

The present invention discloses a packaging structure, which can integrate the passive components of an inductor device on a rewiring structure of the packaging structure, thereby realizing an integrated arrangement of the inductor device and a chip packaging structure. Compared with the packaging solution in the prior art in which the inductor device is attached to the outer surface of a packaging substrate, the size of the entire package is reduced. In an embodiment of the present invention, the inductor device includes an inductor coil.

Specifically, FIG. 1 is a complete structure of the packaging structure of the first embodiment of the present invention after packaging is completed. FIG. 2 is a complete structure of the packaging structure of the second embodiment of the present invention after packaging is completed. As shown in FIGS. 3A-3E, it is a schematic diagram of the process structure formed by the packaging structure disclosed in the first embodiment of the present invention. As shown in FIGS. 4A-4G, it is a schematic diagram of the process structure formed by the packaging structure disclosed in the second embodiment of the present invention. Among them, the packaging structure in the second embodiment is a stacked chip packaging structure.

As shown in FIG. 1 , the packaging structure disclosed in the first embodiment of the present invention includes a rewiring structure 1 and a chip 2 electrically connected to the rewiring structure 1 ;

The rewiring structure 1 includes an insulator 11 and a plurality of patterned metal layers 12 embedded in the insulator 11; the plurality of patterned metal layers 12 are arranged along the thickness direction of the rewiring structure 1 and are electrically connected to each other. It is understandable that different patterned metal layers 12 are extended at different heights, and the patterned metal layers 12 electrically connected to each other can be two adjacent patterned metal layers 12 electrically connected, or two cross-layer patterned metal layers 12 electrically connected. The layer 12 realizes electrical connection. The specific connection method and design method of the different patterned metal layers 12 in the rewiring structure 1 are carried out according to actual needs, and no excessive restrictions are made here.

In the specific embodiment, at least one patterned metal layer 12 has a wiring circuit 121 and an inductor circuit forming an inductor coil 122. In the patterned metal layers 12, some patterned metal layers 12 have inductor circuits formed therein, and the patterned metal layers 12 without inductor circuits have wiring circuits formed therein.

The wiring lines 121 of different patterned metal layers 12 are electrically connected to each other, and the wiring lines 121 are electrically connected to the pads of the chip 2. There can be multiple chips 2, which are arranged in parallel and located on the same side of the rewiring structure 1.

The rewiring structure 1 further includes a magnetic film layer 13, which is disposed on at least one side of the inductor 122 in the thickness direction of the rewiring structure 1, so that at least a portion of the magnetic film layer 13 and at least a portion of the inductor 122 are opposite in the thickness direction of the rewiring structure 1;

The magnetic film layer 13 may be disposed on one side of the inductor 122 . Of course, the magnetic film layer 13 may also be disposed on both sides of the inductor 122 at the same time.

In a specific embodiment, the inductor coil 122 is configured to be formed simultaneously with the patterned metal layer 12 , so that the inductor coil 122 is a part of the patterned metal layer 12 , thereby improving the integration of the inductor coil and the rewiring structure 1 .

The embodiment of the present invention combines the inductor coil 122 with the rewiring process so that the inductor coil 122 is encapsulated in the insulator 11 of the rewiring structure 1, thereby realizing the integration of the inductor coil 122 and the chip packaging structure. By setting a magnetic film layer 13 on one side of the inductor coil 122, the signal of the inductor coil 122 is amplified, so that the inductor coil 122 is integrated in the rewiring structure 1 without affecting the performance of the inductor coil 122, thereby eliminating the weakening of the performance of the inductor coil 122 after the integrated setting, improving the integration of the packaging structure, and reducing the size of the packaging structure after packaging.

Compared with the prior art in which the inductor 122 is assembled on the packaging substrate as an independent device, the embodiment of the present invention integrates the inductor 122 with the rewiring structure, thereby improving the integration of the device.

In a specific embodiment, in the thickness direction of the rewiring structure 1, the position of the inductor 122 is opposite to the position of the magnetic film layer 13. After the magnetic film layer 13 is opposite to the inductor 122, it can amplify the signal of the inductor 122, thereby enhancing the working effect of the inductor 122.

In a specific embodiment, the magnetic film layer 13 is located directly above or below the inductor 122; in the thickness direction of the rewiring structure 1, the projection pattern of the magnetic film layer 13 toward the plane where the inductor 122 is located completely covers the position of the inductor 122.

Specifically, the size of the magnetic film layer 13 can be set to be the same as the size of the inductor coil 122 . In this case, the magnetic film layer 13 and the inductor coil 122 are completely opposite to each other in the thickness direction of the rewiring structure 1 .

Of course, the size of the magnetic film layer 13 can also be set to be larger than the size of the inductor 122. Such a structural setting can better realize the function of the magnetic film layer 13, so that in the thickness direction of the rewiring structure 1, the magnetic film layer 13 can completely cover the signal of the inductor 122, so that each inductor 122 has a corresponding magnetic film layer 13 opposite to it, so that the magnetic film layer 13 can have an effect on the inductor 122 at the corresponding position.

In a specific embodiment, the magnetic film layer 13 is in a sheet shape as a whole and is arranged perpendicular to the thickness direction of the rewiring structure 1. The inductor coil 122 is also in a sheet shape and is arranged perpendicular to the thickness direction of the rewiring structure 1. The plane where the magnetic film layer 13 is located is arranged parallel to the plane where the inductor coil 122 is located. In other embodiments, the extended plane of the magnetic film layer 13 can also be arranged to be oblique to the extended plane of the inductor coil 122.

In other embodiments, the magnetic film layer 13 and the inductor coil 122 may partially face each other in the thickness direction of the rewiring structure 1. Along the thickness direction of the rewiring structure 1, the projection pattern of the magnetic film layer 13 toward the plane where the inductor coil 122 is located partially falls into the location where the inductor coil 122 is located. In this case, only a portion of the magnetic film layer 13 plays a role in amplifying the signal of the inductor coil 122.

In one embodiment, the magnetic film layer 13 is embedded in the insulator 11 , the insulator 11 wraps the magnetic film layer 13 , and the magnetic film layer 13 and the inductor 122 are separated by a portion of the insulator 11 .

Since the inductor 122 and the magnetic film layer 13 are both embedded in the insulator 11, in order to avoid a short circuit between the magnetic film layer 13 and the inductor 122, the magnetic film layer 13 cannot be directly set on the surface of the inductor 122, and other components are required to separate the two to form a spacing setting.

For the non-stacked packaging structure as shown in FIG1 , a rewiring structure 1 is generally formed. At this time, the insulator 11 that wraps the inductor 122 also wraps the magnetic film layer 13 , that is, the inductor 122 and the magnetic film layer 13 are arranged in the same insulator 11 .

For the stacked packaging structure, as shown in FIG2 , it is generally stacked with multiple layers of chips, and a multi-layer rewiring structure 1 is provided at this time, and accordingly, a plurality of insulators 11 are also provided. Since a plurality of insulators 11 are provided, the insulator 11 wrapping the inductor 122 can also wrap the magnetic film layer 13 (as shown in FIG2 ). Of course, the insulator 11 wrapping the inductor 122 and the insulator 11 wrapping the magnetic film layer 13 can also be two different insulators (not shown), that is, the inductor 122 and the magnetic film layer 13 can be provided in different rewiring structures 1.

In order to better improve the performance of the inductor 122, the magnetic film layer 13 is arranged as close to the inductor 122 as possible. That is, even if multiple rewiring structures are provided, the insulator 11 wrapping the inductor 122 and the insulator 11 wrapping the magnetic film layer 13 are arranged as the same insulator 11 as possible.

Regardless of whether the inductor 122 and the magnetic film layer 13 are arranged in the same insulator 11 , part of the magnetic film layer 13 and part of the inductor 122 are positioned opposite to each other in the thickness direction of the rewiring structure 1 , so that the magnetic film layer 13 and the inductor 122 are matched.

In a specific embodiment, when the magnetic film layer 13 and the inductor 122 are arranged in the same rewiring structure 1, the magnetic film layer 13 and the inductor 122 may be separated by a portion of an insulator. In other embodiments, when the magnetic film layer 13 and the inductor 122 are arranged in different rewiring structures, the magnetic film layer 13 and the inductor 122 may also be separated by an insulator, a plastic layer, etc.

In another embodiment, the insulator 11 has a first surface 111 and a second surface 112 disposed in opposite directions; the magnetic film layer 13 is disposed on at least one of the first surface 111 and the second surface 112 .

When the magnetic film layer 13 is embedded in the insulator 11, the magnetic film layer 13 can be formed simultaneously with the patterned metal layer 12. When the magnetic film layer 13 is disposed on the surface of the insulator 11, the magnetic film layer 13 can be formed by attaching.

The magnetic film layer 13 can be a metallic soft magnetic material. In a specific embodiment, the magnetic film layer 13 is a metal film layer containing one of the elements such as iron, cobalt, and nickel, specifically an iron-containing metal film, or a nickel-containing metal film, or a cobalt-containing metal film, or an iron-nickel alloy film, or an iron-cobalt alloy film, or a nickel-cobalt alloy film, or an iron-nickel-cobalt alloy film.

Metallic soft magnetic materials have high saturation magnetization, high magnetic permeability, and low coercivity, and they can be prepared by sputtering, evaporation or electroplating, and are well compatible with current packaging processes.

The rewiring structure 1 disclosed in the embodiment of the present invention is formed by using a typical rewiring technology, using a multi-layer polyimide film layer with photosensitive properties as an insulating layer and forming the insulator 11 in the process of stacking the multi-layer insulating layers.

The insulating layer includes or is made of one or more polymer materials. The polymer material may include polybenzoxazole (PBO), polyimide (PI), epoxy resin, one or more other suitable polymer materials or a combination thereof. In a specific embodiment, the polymer material used for the insulating layer is photosensitive. Therefore, a circuit pattern can be formed in the insulating layer using a photolithography process.

In some other embodiments, part or all of the insulating layer further includes or is made of a dielectric material other than the polymer material. The dielectric material may include silicon oxide, silicon carbide, silicon nitride, silicon oxynitride, one or more other suitable materials, or a combination thereof.

In the specific formation process, the insulating layer can be formed by coating, deposition and other methods, and then the insulating layer in the target area is etched to form insulating windows at the target position, and a circuit pattern is formed with all the insulating windows in the insulating layer. Then, electroplating and other methods are used to set the patterned metal layer 12 in the circuit pattern or on the upper surface of the corresponding insulating layer; the entire rewiring structure 1 needs to be finally formed through multiple coating, etching, electroplating and other process steps during the photolithography process.

Taking the adjacent first insulating layer and the second insulating layer as an example, wherein the second insulating layer is arranged on the upper surface of the first insulating layer, the first insulating layer is arranged first, and a first circuit pattern is opened in the target area of the first insulating layer. A first patterned metal layer is formed on the upper surface of the first insulating layer, and a portion of the first patterned metal layer is filled in the first circuit pattern;

A second insulating layer is arranged on the upper surface of the first insulating layer, a second circuit pattern is arranged in a target area of the second insulating layer, the second circuit pattern penetrates the second insulating layer, and a portion of the first patterned metal layer is exposed outward from the second circuit pattern; a second patterned metal layer is arranged on the upper surface of the second insulating layer, and a portion of the second patterned metal layer is arranged in the second circuit pattern and is electrically connected to the first patterned metal layer.

It is understandable that when setting the patterned metal layer, if electroplating is used, it is also necessary to set a seed layer on the upper surface of the insulating layer and coat a photoresist layer on the upper surface of the seed layer before electroplating, and then expose and develop the photoresist layer corresponding to the area where the metal layer is set to form a photoresist window pane, and electroplate the patterned metal layer 12 in the photoresist window pane.

When a circuit pattern is arranged on a certain insulating layer, a coil opening can be arranged on the insulating layer at the same time to form an inductor circuit, and the inductor 122 is finally arranged in the coil opening. Of course, in other embodiments, the inductor 122 can also be directly arranged on the first surface of the insulating layer without the need to arrange a circuit pattern on the corresponding insulating layer.

The thickness of the inductor coil 122 can be the same as the thickness of the wiring line 121 of the patterned metal layer 12 of the corresponding insulating layer. The depth of the coil opening opened on the insulating layer and the circuit pattern can be set to be consistent, and the inductor coil 122 and the wiring line 121 can be set at the same time.

Of course, the thickness of the inductor 122 can also be less than the thickness of the wiring line 121 in the corresponding patterned metal layer 12. In this case, when the inductor 122 is set, the depth of the coil window opened on the insulating layer can be less than the depth of the line pattern on the insulating layer, and the line pattern is used to form the wiring line 121. Of course, the depth of the line pattern can also be made consistent with the depth of the coil window, but when the inductor 122 is set, since the thickness of the inductor 122 is less than the thickness of the wiring line 121, there is still space in the coil window located on the upper side of the inductor 122, and the space can be filled with insulating material.

Of course, in other embodiments, since the thickness of the inductor coil 122 is very thin, there is no need to open a coil window in the insulating layer, so the inductor coil 122 can be directly arranged on the first surface of the insulating layer. The inductor coil 122 can be arranged on the first surface of the insulating layer in an attached manner, and in this case, the inductor coil 122 is arranged after the wiring line 121 corresponding to the insulating layer is formed.

Accordingly, in a specific embodiment, the insulator 11 wraps the magnetic film layer 13, and the magnetic film layer 13 can also be arranged in any insulating layer or between any two insulating layers during the formation of the rewiring structure 1.

The extension plane of the magnetic film layer 13 and the extension plane of the patterned metal layer 12 in the corresponding insulating layer are located in the same plane. The magnetic film layer 13 can be set simultaneously with the patterned metal layer 12 at the corresponding position. When the circuit pattern is set on the insulating layer, a thin film window is set on the insulating layer at the same time. When the patterned metal layer 12 is set, the magnetic film layer 13 is set in the thin film window at the same time.

Of course, in other embodiments, since the thickness of the magnetic film layer 13 is very thin, there is no need to open a film window in the insulating layer, and therefore, the magnetic film layer 13 can be directly disposed on the first surface of the insulating layer. Specifically, the magnetic film layer 13 can be disposed on the first surface of the insulating layer in an attached manner, and in this case, the magnetic film layer 13 is disposed after the patterned metal layer 12 corresponding to the insulating layer is disposed.

In a specific embodiment, the inductor coil 122 and the magnetic film layer 13 are both provided after the corresponding insulating layer is provided, and the inductor coil 122 and the magnetic film layer 13 may be separated by the insulating layer. In order to better achieve the enhancement effect, the inductor coil 122 is provided close to the magnetic film layer 13, and only one insulating layer is provided between the inductor coil 122 and the magnetic film layer 13.

The number of magnetic film layers 13 can be at least two, and the magnetic film layers 13 can be disposed on both the first surface 111 and the second surface 112 of the insulator 11. In this case, the inductor 122 is relatively disposed between the two magnetic film layers 13, and the inductor 122 and the magnetic film layers 13 are arranged along the thickness direction of the rewiring structure 1.

The inductor coil 122 can be provided in one layer, two layers, or even multiple layers. When the inductor coil 122 is provided in two layers, the inductor circuit needs to be provided in the process of forming the two patterned metal layers 12. Similarly, when the inductor coil 122 is provided in multiple layers, the inductor circuit needs to be provided in the process of forming each corresponding patterned metal layer 12.

When the inductor 122 is provided with two or more layers, the inductor 122 and the magnetic film layer 13 are alternately provided. The alternate arrangement here can be that a layer of magnetic film layer 13 is provided on a layer of inductor 122, and then another layer of inductor 12 is formed on the magnetic film layer 13, and they are arranged along the thickness direction of the rewiring according to the above rule.

Specifically, in the embodiment of the present invention, the inductor coil 122 is provided with two layers, the two layers of inductor coils 122 are parallel to each other, and the two layers of inductor coils 122 are respectively a first coil and a second coil arranged in the thickness direction of the rewiring structure 1. The first coil and the second coil are separated by a part of the insulator 11. The magnetic film layer 13 is also provided with two layers, and the two layers of inductor coils 122 are arranged between the two layers of magnetic film layers 13.

Of course, in other embodiments, the two layers of inductor coils 122 and the two layers of magnetic film layers 13 may be interlaced with each other, so that one layer of inductor coil 122 is disposed oppositely between the two layers of magnetic film layers 13 , and one layer of magnetic film layer 13 is disposed oppositely between the two layers of inductor coils 122 .

In other embodiments, two magnetic film layers 13 and one inductor 122 may be arranged in coordination. The two magnetic film layers 13 may be arranged on opposite sides of the inductor 122 or on the same side of the inductor 122 .

Of course, in other embodiments, three magnetic film layers 13 may be arranged to cooperate with two inductor coils 122 . Specifically, the three magnetic film layers 13 are arranged at intervals, and the two inductor coils 122 are inserted between the three magnetic film layers 13 .

In the present invention, the ratio between the thickness of the insulating layer where the inductor coil 122 is located and the thickness of the insulating layer where the magnetic film layer 13 is located is in the range of 0.5-2. Such a structural setting enables the packaging structure to be formed without changing the existing formation process and formation equipment, thereby avoiding too much impact on the formation process and avoiding an increase in production costs.

The packaging structure further comprises a metal bump 3, which is arranged on a side of the rewiring structure 1 away from the chip 2, and the metal bump 3 is electrically connected to the wiring line 121. Of course, in other embodiments, the side of the rewiring structure 1 away from the chip 2 may be provided with other electrical connection structures, such as other rewiring layers.

The inductor 122 can be configured to be electrically connected to the wiring line 121 of the patterned metal layer 12. When the inductor 122 is electrically connected to the wiring line 121 of the patterned metal layer 12, the inductor 122 needs to conduct current signals to the outside with the help of the wiring line 121, and the wiring line 121 finally conducts current signals to the outside with the help of the metal bump 3.

In other embodiments, a separate inductor bump 4 may be provided to be electrically connected to the inductor coil 122. Specifically, the inductor bump 4 is provided on the second surface of the rewiring structure 1 and is electrically connected to the inductor coil 122. The inductor bump 4 is used to lead out the inductor coil 122. The inductor bump 4 and the metal bump 3 may be formed using the same structure and the same process.

In a specific embodiment, the chip 2 is a bare chip. The chip 2 is electrically connected to the rewiring structure 1 via a plurality of conductive pillars 5 . The conductive pillars 5 are located between the rewiring structure and the chip 2 to achieve electrical connection between the chip 2 and the rewiring structure 1 .

The packaging structure further comprises a filling layer 6, which is filled in the area between the rewiring structure 1 and the chip 2, and the filling layer 6 surrounds the conductive pillar 5. The filling layer 6 is a whole layer structure, which is filled between the plurality of chips 2 and the rewiring structure 1. The filling layer 6 is also filled between two adjacent chips 2.

The filling layer 6 is provided to surround and protect the conductive pillars 5 between the chip 2 and the rewiring structure 1. In addition, the filling layer 6 can also strengthen the connection between the chip 2 and the rewiring structure 1. The filling layer 6 may include or be made of an insulating material, such as a thermosetting adhesive.

The packaging structure further includes a first protective layer 7, which covers the chip 2 and protects the chip 2. The first protective layer 7 may be a plastic sealing layer, and the material constituting the first protective layer 7 may be an epoxy resin adhesive prepared by a film sealing process. The elastic modulus of the material constituting the first protective layer 7 is greater than the elastic modulus of the material constituting the filling layer.

In the second embodiment, a stacked packaging structure is provided. As shown in FIG2 , the chip 2 includes a first chip 21 and a second chip 22 arranged in parallel on one side of the rewiring structure; the packaging structure further includes a bridge chip 8, a bridge chip protection layer 9 and a conductive bump 10. The bridge chip 8 is provided on a side of the rewiring structure 1 away from the chip 2 and is electrically connected to the first chip 21 and the second chip 22 respectively.

The bridge chip protection layer 9 is disposed on the second surface 112 of the insulator 11 and covers the bridge chip 8. The bridge chip protection layer 9 is provided with a protection layer through hole 90 penetrating the bridge chip protection layer 9.

The conductive bump 10 is disposed in the protective layer through hole 90 and electrically connected to the wiring line 121 .

The packaging structure further has a metal bump 3 , which is disposed on a side of the bridge chip protection layer 9 away from the insulator 11 , and is electrically connected to the conductive bump 10 .

The packaging structure further includes a bottom rewiring layer 2020, which is disposed on a side of the bridge chip protection layer 9 away from the insulator 11 and includes a bottom insulating layer 201 and a bottom metal layer 202 disposed in the bottom insulating layer 201;

The metal bumps 3 and the conductive bumps 10 are disposed opposite to each other on two sides of the bottom redistribution layer 2020 and are electrically connected through the bottom metal layer 202 .

The method for forming the packaging structure disclosed in the above embodiment includes the following steps:

Providing a carrier substrate, and disposing a bonding layer on one side of the carrier substrate;

The rewiring structure is formed on a side of the bonding layer away from the carrier substrate, wherein the rewiring structure comprises an insulator and a plurality of patterned metal layers embedded in the insulator, at least one of the patterned metal layers comprises a wiring line and an inductor line forming an inductor coil; the rewiring structure further comprises a magnetic film layer arranged on at least one side of the inductor coil in a thickness direction of the rewiring structure;

electrically connecting the chip to the wiring line;

The carrier substrate and the bonding layer are removed.

In combination with the specific embodiment, the packaging structure of the first embodiment of the present application is formed as follows:

S100: As shown in FIG. 3A , providing a carrier substrate 100 , and disposing a bonding layer 200 on a first surface of the carrier substrate 100 ;

The carrier substrate 100 may be a glass carrier or any suitable carrier applicable to the manufacturing method of the packaging structure; in a specific embodiment, the carrier substrate 100 is a silicon substrate, which is used to assist in setting the packaging structure and needs to be removed later;

In order to better realize the arrangement of the rewiring structure 1 on the carrier substrate 100, a bonding layer 200 is arranged on the first surface of the carrier substrate 100. The bonding layer 200 also serves as an auxiliary layer in the formation process of the rewiring structure 1 and needs to be removed after the packaging is completed; the bonding layer 200 can be an adhesive layer.

S200: As shown in FIG3B , a rewiring structure 1 is arranged on the surface of the bonding layer 200 away from the carrier substrate 100, and an inductor 122 is formed in the rewiring structure during the process of the rewiring structure 1 being arranged; at the same time, a magnetic film layer 13 is arranged in the rewiring structure 1 during the process of forming the rewiring structure 1; wherein the magnetic film layer 13 is arranged on one side of the inductor 122 in the thickness direction;

For the first embodiment, since the rewiring structure 1 wraps the magnetic film layer 13 and the rewiring structure 1 also wraps the inductor 122, the magnetic film layer 13 can be arranged in the rewiring structure 1 when the rewiring structure 1 is formed, and the inductor 122 can be arranged in the rewiring structure 1 when the rewiring structure 1 is formed; the magnetic film layer 13 can be formed simultaneously with the patterned metal layer 12 by electroplating;

S300: As shown in FIG3C , the chip 2 is electrically connected to the rewiring structure 1 through the conductive pillar 5; in the embodiment of the present invention, the chip 2 is combined with the rewiring structure 1 by flip-chip packaging, and the conductive pillar 5 can be a copper pillar, which is arranged on the first surface of the rewiring structure 1 and faces one side of the chip 2; the conductive pillar 5 is opposite to the patterned metal layer 12 in the rewiring structure 1 and is electrically connected;

S400: As shown in FIG. 3D , the carrier substrate 100 and the bonding layer 200 are removed, and a metal bump 3 is provided on a side of the rewiring structure 1 away from the chip 2 (as shown in FIG. 3E ).

In other embodiments, if the magnetic film layer 13 is disposed on the first surface or the second surface of the rewiring structure 1, the difference from the above embodiment is that the rewiring structure 1 is disposed on the side of the bonding layer 200 away from the carrier substrate 100, and the inductor 122 is disposed in the process of disposing the rewiring structure 1 so that the inductor 122 is disposed in the rewiring structure 1, specifically, the inductor 122 is disposed in the insulator 11; at the same time, after the rewiring structure 1 is disposed, the magnetic film layer 13 is disposed so that the magnetic film layer 13 is disposed on the first surface of the rewiring structure 1 away from the bonding layer 200, specifically, the magnetic film layer 13 is disposed on the first surface of the insulator 11;

The magnetic film layer 13 described in the above embodiment is formed after the rewiring structure 1 is formed; the magnetic film layer 13 can be directly attached to the first surface of the rewiring structure 1 by means of attachment, and can also be provided by means of electroplating. Before electroplating, an insulating layer can be provided on the first surface of the rewiring structure 1 away from the bonding layer 200, and a thin film window can be provided on the insulating layer, and the magnetic film layer 13 is formed by electroplating in the thin film window;

In other embodiments, a magnetic film layer 13 may be provided on the bonding layer 200 before the rewiring structure 1 is provided; specifically, the rewiring structure 1 is provided on the first surface of the bonding layer 200 away from the carrier substrate 100, and in the process of providing the rewiring structure 1, an inductor 122 is provided so that the inductor 122 is provided in the rewiring structure 1, specifically, the inductor 122 is provided in the insulator 11; at the same time, before providing the rewiring structure 1, a magnetic film layer 13 is provided on the first surface of the bonding layer 200 away from the carrier substrate 100; similarly, the magnetic film layer 13 may be directly attached to the first surface of the bonding layer 200 by means of attachment, and of course, may be provided by means of electroplating, and before electroplating, an insulating layer may be provided on the first surface of the bonding layer 200 away from the carrier substrate, and a thin film window may be provided in the insulating layer, and the magnetic film layer 13 may be formed by electroplating in the thin film window.

Wherein, in S200: “forming the rewiring structure on a side of the bonding layer away from the carrier substrate” specifically includes the following steps:

As shown in FIG. 3E , several insulating layers are sequentially stacked on the bonding layer 200 , a circuit pattern is etched in a target area of each insulating layer, a patterned metal layer 12 is disposed between adjacent insulating layers, and a portion of the patterned metal layer 12 is disposed within the circuit pattern to be electrically connected to the adjacent patterned metal layer 12 ;

While a circuit pattern is provided on a certain insulating layer, a coil window is provided on the insulating layer; while a patterned metal layer 12 is provided in the circuit pattern, an inductor coil 122 is provided in the coil window; it should be noted that both the circuit pattern and the coil window penetrate the insulating layer in a direction perpendicular to the extension plane of the insulating layer, and both the circuit pattern and the coil window can be formed by an etching process.

The magnetic film layer 13 is disposed simultaneously with the patterned metal layer 12 in a certain insulating layer located above the inductor 122 ; or the magnetic film layer 13 is disposed simultaneously with the patterned metal layer 12 in a certain insulating layer located below the inductor 122 .

After "S300: electrically connecting the chip 2 to the rewiring structure 1 through an electrical connector", the process also includes setting a filling layer 6 between the chip 2 and the rewiring structure 1; setting a first protective layer 7 on the surface of the chip 2 facing away from the rewiring structure 1 and on the first surface 111 of the rewiring structure 1, and the first protective layer 7 covers the chip 2 and the rewiring structure 1.

As shown in FIGS. 4A-4G , the method for forming the packaging structure in the second embodiment includes the following steps:

S100: As shown in FIG. 4A , providing a carrier substrate 100 , and disposing a bonding layer 200 on a first surface of the carrier substrate 100 ;

S200: As shown in FIG4A , a bottom insulating layer 201 is provided on the first surface of the bonding layer 200, the bottom insulating layer 201 is etched to form a circuit pattern, a bottom metal layer 202 is provided in the circuit pattern to form a bottom rewiring layer 20; a conductive bump 10 is provided on the bottom metal layer 202, and the conductive bump 10 protrudes out of the first surface of the bottom insulating layer; the conductive bump 10 serves to electrically connect the rewiring structure 1 and the bottom rewiring layer 20; the conductive bump 10 can be provided on the corresponding bottom metal layer 202 by welding, and of course the conductive bump 10 can also be provided by conventional electroplating. In a specific embodiment, the bottom insulating layer 201 is formed by a layer of insulating material, and the bottom metal layer 202 is stacked by a layer of metal layers; of course, in other embodiments, the bottom insulating layer 201 can also be formed by stacking multiple insulating layers, and correspondingly, the bottom metal layer 202 is also formed by stacking multiple metal layers; it can be understood that the number of insulating layers stacked in the bottom rewiring layer 20 can be set according to actual needs;

S300: As shown in FIG4B , a bridge chip 8 is disposed on the bottom insulating layer, wherein the pads of the bridge chip 8 are disposed in a direction away from the bottom insulating layer 201 ; and chip bumps are disposed on the pads of the bridge chip 8 ; the bridge chip 8 can be attached to the bottom insulating layer 201 by using colloid;

S400: As shown in FIG4B , a bridge chip protection layer 9 is provided on the first surface of the bridge chip 8 and the bottom rewiring layer 20, the bridge chip protection layer 9 covers the bridge chip 8, and the bridge chip protection layer 9 covers the bottom rewiring layer 20, and a portion of the bridge chip protection layer 9 is removed to allow the chip bumps and the conductive bumps 10 to be The first surface of the bridge chip protection layer 9 is exposed outward; specifically, a grinding process can be used to remove the top surface of the bridge chip protection layer 9 so that the chip bumps and the conductive bumps 10 are flush and exposed outward at the same time; the bridge chip protection layer 9 can be a plastic packaging layer, and the specific structure and material are consistent with the first protection layer 7, which will not be repeated here.

S500: As shown in FIGS. 4C-4D , an insulating layer is firstly provided on the first surface of the bridge chip protection layer 9; the insulating layer in the target area is etched to form a circuit pattern on the insulating layer; a patterned metal layer 12 is provided in the circuit pattern and part of the patterned metal layer 12 covers the first surface of the insulating layer, and multiple insulating layers are stacked and multiple metal layers are staggered to form the rewiring structure 1;

In the process of forming the rewiring structure 1, a circuit pattern is provided on a certain insulating layer, and a coil opening is provided on the insulating layer at the same time, and a wiring line 121 is provided in the circuit pattern and an inductor coil 122 is provided in the coil opening;

When the patterned metal layer 12 in a certain insulating layer on the upper side of the inductor 122 is provided, the magnetic film layer 13 is provided at the same time; or when the patterned metal layer 12 in a certain insulating layer on the lower side of the inductor 122 is provided, the magnetic film layer 13 is provided at the same time;

For the specific embodiment, an insulating layer is set on the first surface of the bridge chip protection layer 9. When the insulating layer is etched to form a circuit pattern, a thin film window is also opened on the insulating layer; when the patterned metal layer 12 is set in the circuit pattern, a magnetic thin film layer 13 is also set in the thin film window, and then the inductor 122 is set in the above manner. After the inductor 122 is set, the magnetic thin film layer 13 is set on the upper side of the inductor 122. The two layers of magnetic thin film layers 13 are set to enhance the stability of the inductor 122.

S600: As shown in FIG4E , the chip 2 is electrically connected to the rewiring structure 1 through the conductive pillars 5;

S700: As shown in FIG4F , a filling layer 6 is provided between the chip 2 and the rewiring structure 1 ;

S800: As shown in FIG. 4F , a first protective layer 7 is provided on the first surface of the rewiring structure 1 to plastic-encapsulate the chip 2 and the rewiring structure 1 ;

S900 : As shown in FIG. 4G , the carrier substrate 100 and the bonding layer 200 are removed, and a metal bump 3 is disposed on the second surface of the bottom insulating layer, and the metal bump 3 is electrically connected to the bottom metal layer 202 .

The above describes in detail the structure, features and effects of the present invention based on the embodiments shown in the drawings. The above is only a preferred embodiment of the present invention, but the present invention is not limited to the scope of implementation shown in the drawings. Any changes made according to the concept of the present invention, or modified into equivalent embodiments with equivalent changes, which still do not exceed the spirit covered by the description and the drawings, should be within the protection scope of the present invention.

Claims (12)

A packaging structure, characterized by comprising: A rewiring structure comprises an insulator and a plurality of patterned metal layers embedded in the insulator, at least one of the patterned metal layers comprises a wiring circuit and an inductor circuit forming an inductor coil; the rewiring structure further comprises a magnetic film layer, and in the thickness direction of the rewiring structure, the magnetic film layer is arranged on at least one side of the inductor coil; The chip is arranged on one side of the rewiring structure along the thickness direction and is electrically connected to the wiring line. The packaging structure according to claim 1 is characterized in that, in the thickness direction of the rewiring structure, the position of the inductor coil is opposite to the position of the magnetic film layer. The packaging structure according to claim 1 is characterized in that the magnetic film layer is embedded in the insulator, and the magnetic film layer and the inductor coil are separated by a portion of the insulator. The packaging structure according to claim 1 is characterized in that the insulator has a first surface and a second surface arranged in opposite directions; and the magnetic film layer is arranged on at least one of the first surface and the second surface. The packaging structure according to any one of claims 1 to 4 is characterized in that the magnetic film layer is provided with at least two layers, and the inductor coil is provided between the two magnetic film layers. The packaging structure according to claim 5, characterized in that the inductor coil is also provided with at least two layers; In the thickness direction of the rewiring structure, the inductor coils and the magnetic film layers are arranged alternately. The packaging structure according to any one of claims 1 to 4 is characterized in that the magnetic film layer is a superposition of one or more of an iron-containing metal film layer, a nickel-containing metal film layer, a cobalt-containing metal film layer, an iron-nickel alloy film layer, an iron-cobalt alloy film layer, a nickel-cobalt alloy film layer, or an iron-nickel-cobalt alloy film layer. The packaging structure according to claim 1, characterized in that the packaging structure further comprises a metal bump, the metal bump is arranged on a side of the rewiring structure away from the chip, and the metal bump is electrically connected to the wiring line; The packaging structure also has an inductor bump, which is arranged on a side of the rewiring structure away from the chip, and is electrically connected to the inductor coil; the inductor coil and the wiring line are separated by a portion of the insulator. The packaging structure according to claim 1, characterized in that the chip comprises a first chip and a second chip arranged in parallel on one side of the rewiring structure; The packaging structure further includes: A bridge chip, arranged on a side of the rewiring structure away from the chip and electrically connected to the first chip and the second chip respectively; A bridge chip protection layer is disposed on the second surface of the insulator and covers the bridge chip, and a protection layer through hole penetrating the bridge chip protection layer is disposed on the bridge chip protection layer; A conductive bump is disposed in the through hole of the protection layer and electrically connected to the wiring line. The packaging structure according to claim 9 is characterized in that the packaging structure further comprises a metal bump, the metal bump is arranged on a side of the bridge chip protection layer away from the insulator, and the metal bump is electrically connected to the conductive bump. The packaging structure according to claim 10, characterized in that the packaging structure further comprises: A bottom rewiring layer is arranged on a side of the bridge chip protection layer away from the insulator and comprises a bottom insulating layer and a bottom metal layer arranged in the bottom insulating layer; The metal bumps and the conductive bumps are arranged opposite to each other at two sides of the bottom redistribution layer and are electrically connected through the bottom metal layer. A method for forming a packaging structure according to any one of claims 1 to 11, characterized in that it comprises the following steps: Providing a carrier substrate, and disposing a bonding layer on one side of the carrier substrate; The rewiring structure is formed on a side of the bonding layer away from the carrier substrate, wherein the rewiring structure comprises an insulator and a plurality of patterned metal layers embedded in the insulator, and at least one of the patterned metal layers comprises a wiring circuit and an inductor circuit forming an inductor coil; electrically connecting the chip to the wiring circuit; The carrier substrate and the bonding layer are removed.