WO2024148874A1

WO2024148874A1 - Wear leveling method and apparatus, and electronic device and storage medium

Info

Publication number: WO2024148874A1
Application number: PCT/CN2023/122278
Authority: WO
Inventors: 赵宝林; 赵金; 李敬超; 钟戟
Original assignee: 苏州元脑智能科技有限公司
Priority date: 2023-01-09
Filing date: 2023-09-27
Publication date: 2024-07-18
Also published as: CN115793987B; CN115793987A

Abstract

A wear leveling method and apparatus, and an electronic device and a storage medium, which relate to the technical field of data processing. The method comprises: acquiring an erase/program frequency of each logical address in a target solid-state disk (101); according to erase/program frequencies of a plurality of logical addresses corresponding to a first physical storage area, determining a target erase/program frequency of the first physical storage area, and acquiring a target degree of wear of the first physical storage area (102); determining whether the target erase/program frequency and the target degree of wear satisfy a preset matching condition (103); if the target erase/program frequency and the target degree of wear do not satisfy the preset matching condition, determining, from among the physical storage areas other than the first physical storage area, a second physical storage area, the degree of wear of which satisfies the preset matching condition with the target erase/program frequency (104); and transferring data in the first physical storage area to the second physical storage area for storage (105). Wear leveling is performed on the basis of the relationship between the overall erase/program frequency of a physical storage area and a corresponding degree of wear, thereby improving the efficiency of wear leveling.

Description

Wear leveling method, device, electronic device and storage medium

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the priority of the Chinese patent application filed with the China Patent Office on January 9, 2023, with application number 202310029810.9 and application name “A wear leveling method, device, electronic device and storage medium”, all contents of which are incorporated by reference in this application.

Technical Field

The present application relates to the field of data processing technology, and in particular to a wear leveling method, device, electronic device and storage medium.

Background technique

With the development and widespread application of technologies such as the Internet, cloud computing, the Internet of Things, and big data, massive amounts of data are generated all the time in human life. These massive amounts of data need to be processed and stored. The rapid development of information technology has put forward higher requirements on the performance of storage systems. Solid-state drives are widely used because of their fast read and write speeds and low energy consumption.

Currently, the use of solid-state drives is becoming more and more widespread, and the requirements for the performance and capacity of solid-state drives are getting higher. With the development of flash memory technology and the improvement of the performance of the main control chip, the relevant technologies of solid-state drives are constantly updated to meet the needs of applications as much as possible.

With the development of SSD and NVMe (Non Volatile Memory Host Controller Interface Specification) technology, storage systems and Internet applications have put forward higher requirements for SSDs, requiring higher performance and better lifespan. Currently, the key points affecting the lifespan of SSDs are the lifespan of flash media and the wear-leveling algorithm of FTL (Flash Translation Layer). The lifespan of the flash media itself depends on the development of flash media technology and the capabilities of the manufacturer. For SSD manufacturers, providing an efficient wear-leveling algorithm is the key to prolonging lifespan.

Summary of the invention

In view of the above problems, a wear leveling method, device, electronic device and storage medium are proposed to overcome the above problems or at least partially solve the above problems, including:

A wear leveling method, the method comprising:

Obtaining the write-erase frequency of each logical address in a target solid-state hard disk, where the target solid-state hard disk includes multiple physical storage areas;

Determine a target write-erase frequency of the first physical storage area according to the write-erase frequencies of the plurality of logical addresses corresponding to the first physical storage area, and obtain a target wear degree of the first physical storage area;

Determine whether the target erasure frequency and the target wear degree meet the preset matching conditions;

When the target write-erase frequency and the target wear degree do not satisfy a preset matching condition, determining a second physical storage area that satisfies a preset matching condition with the target write-erase frequency from other physical storage areas except the first physical storage area;

The data in the first physical storage area is transferred to the second physical storage area for storage.

In some embodiments of the present application, obtaining the erase and write frequency of each logical address in the target solid state drive includes:

Segmenting all logical addresses in the target solid state drive to obtain a plurality of logical address segments, each logical address segment including at least one logical address;

The erasing and writing frequency of each logical address segment is determined, and the erasing and writing frequency of the logical address segment is used as the erasing and writing frequency of each logical address included in the logical address segment.

In some embodiments of the present application, determining the erasing frequency of each logical address segment includes:

Count the total number of erase/write times of the target solid-state drive and the number of segment erase/write times of each logical address segment;

When the total erasure number exceeds the first threshold, the erasure frequency of each logical address segment is calculated according to the segment erasure number and the total erasure number.

In some embodiments of the present application, the method further includes:

The total erase and write times and the segment erase and write times are cleared, and the total erase and write times of the target solid state drive and the segment erase and write times of each logical address segment are counted again.

In some embodiments of the present application, the method further includes:

According to the write-erase frequency of each logical address segment, determining whether the data in the target solid state drive meets the preset tiering condition;

When the data in the target solid state drive meets the preset tiering condition, the frequency level of each logical address segment is determined according to the erase and write frequency of each logical address segment;

For target data to be written into the physical storage area, determining a target logical address segment corresponding to the target data;

According to the frequency level of the target logical address segment, a corresponding third physical storage area is determined, and the target data is written into the third physical storage area.

In some embodiments of the present application, the method further includes:

When the data in the target solid state drive does not meet the preset tiering condition, the erase and write frequencies of each logical address segment are cleared, and the erase and write frequencies of each logical address segment are recalculated.

In some embodiments of the present application, judging whether the data in the target solid-state drive meets the preset tiering condition according to the erase and write frequency of each logical address segment includes:

Determine the first M logical address segments with the highest erasure frequency, and calculate the total erasure frequency of the first M logical address segments with the highest erasure frequency, where M is a positive integer;

When the total write-erase frequency of the current M logical address segments is greater than a third threshold, it is determined that the data in the target solid state drive meets the preset tiering condition.

In some embodiments of the present application, the frequency level of each logical address segment is determined according to the erase and write frequency of each logical address segment, including:

Sort the logical address segments according to the erase and write frequencies of the logical addresses;

Based on the ranking of the logical address segments, a frequency rank of the logical address segments is determined.

In some embodiments of the present application, determining the corresponding third physical storage area according to the frequency level of the target logical address segment includes:

Sort each physical storage area according to the degree of wear;

Determine the wear level of each physical storage area based on the ranking of each physical storage area;

A third physical storage area having a wear level matching the frequency level of the target logical address segment is determined.

In some embodiments of the present application, determining a third physical storage area whose wear level matches the frequency level of the target logical address segment includes:

Pre-establishing the correspondence between the frequency level and the wear level of the logical address segment;

From the corresponding relationship, determining a target wear level corresponding to the frequency level of the target logical address segment;

A physical storage area having a target wear level is used as the third physical storage area.

In some embodiments of the present application, determining a target erase/write frequency of the first physical storage area according to erase/write frequencies of a plurality of logical addresses corresponding to the first physical storage area includes:

Determine targets and values of erase and write frequencies of a plurality of logical addresses corresponding to the first physical storage area;

Determining a target number of logical addresses corresponding to the first physical storage area;

A target erasing frequency of the first physical storage area is determined according to the target sum value and the target quantity.

In some embodiments of the present application, determining a target erase/write frequency of the first physical storage area according to the target value and the target quantity includes:

calculating a first ratio of the target sum value to the target quantity;

A second ratio of the first ratio to the target number is calculated, and the second ratio is used as the target erase frequency.

In some embodiments of the present application, obtaining a target wear level of the first physical storage area includes:

Get the number of wear times of each physical storage area;

Determining a first wear deviation of a first physical storage area according to the number of wears of each physical storage area;

A target wear degree is determined based on the first wear deviation.

In some embodiments of the present application, determining a first wear deviation of a first physical storage area according to the number of wear times of each physical storage area includes:

Determine an extreme wear count, an average wear count, and a wear count of the first physical storage area from the wear counts of each physical storage area;

Determine a first difference between the number of wear times and the extreme number of wear times of the first physical storage area, and a second difference between the average number of wear times and the extreme number of wear times;

A first wear deviation is determined based on a ratio of the first difference to the second difference.

In some embodiments of the present application, determining whether the target erase frequency and the target wear degree meet a preset matching condition includes:

Determine the matching degree between the target erase frequency and the target wear degree;

When the matching degree between the target erasing frequency and the target wear degree exceeds a second threshold, it is determined that the target erasing frequency and the target wear degree meet a preset matching condition.

In some embodiments of the present application, determining the matching degree between the target erase frequency and the target wear degree includes:

determining a third ratio of the target erase frequency to the target wear degree;

The matching degree between the target erasing frequency and the target wear degree is determined according to the third ratio.

Sort the physical storage areas according to the magnitude of the erase and write frequencies of the physical storage areas, and determine the frequency level of the physical storage areas based on the sorting of the physical storage areas;

Sort the physical storage areas according to the degree of wear, and determine the wear level of each physical storage area based on the sort of the physical storage areas;

According to the wear level and frequency level corresponding to the first physical storage area, the matching degree between the target write-erase frequency and the target wear degree is determined.

In some embodiments of the present application, after transferring the data in the first physical storage area to the second physical storage area for storage, the method further includes:

The write-erase frequencies of the first physical storage area and the second physical storage area are updated according to the transferred data.

The embodiment of the present application also provides a wear leveling device, the device comprising:

The first acquisition module is used to obtain the erase and write frequency of each logical address in the target solid-state hard disk. The target solid-state hard disk includes multiple physical storage area;

A second acquisition module, configured to determine a target write-erase frequency of the first physical storage area according to the write-erase frequencies of a plurality of logical addresses corresponding to the first physical storage area, and to acquire a target wear degree of the first physical storage area;

A first judgment module is used to judge whether the target erasure frequency and the target wear degree meet a preset matching condition;

A first determination module is used to determine a second physical storage area that meets the preset matching condition with the target erasing frequency from other physical storage areas except the first physical storage area when the target erasing frequency and the target wear degree do not meet the preset matching condition;

The transfer module is used to transfer the data in the first physical storage area to the second physical storage area for storage.

In some embodiments of the present application, a first acquisition module is used to segment all logical addresses in a target solid-state hard disk to obtain multiple logical address segments, each logical address segment including at least one logical address; determine the erase and write frequency of each logical address segment, and use the erase and write frequency of the logical address segment as the erase and write frequency of each logical address included in the logical address segment.

In some embodiments of the present application, the first acquisition module is used to count the total number of erase and write times of the target solid-state hard disk, and the number of segment erase and write times of each logical address segment; when the total number of erase and write times exceeds the first threshold, the erase and write frequency of each logical address segment is calculated based on the segment erase and write times and the total erase and write times.

In some embodiments of the present application, the device further includes:

The first clearing module is used to clear the total erase and write times and the segment erase and write times, and restart counting the total erase and write times of the target solid state drive and the segment erase and write times of each logical address segment.

In some embodiments of the present application, the device further includes:

A write module is used to determine whether the data in the target solid-state hard disk meets the preset stratification conditions according to the write-erasing frequency of each logical address segment; when the data in the target solid-state hard disk meets the preset stratification conditions, determine the frequency level of each logical address segment according to the write-erasing frequency of each logical address segment; for the target data to be written into the physical storage area, determine the target logical address segment corresponding to the target data; determine the corresponding third physical storage area according to the frequency level of the target logical address segment, and write the target data into the third physical storage area.

In some embodiments of the present application, the device further includes:

The second clearing module is used to clear the write-erase frequency of each logical address segment and restart the calculation of the write-erase frequency of each logical address segment when the data in the target solid state drive does not meet the preset stratification condition.

In some embodiments of the present application, the write module is used to determine the top M logical address segments with the highest erase frequency, and calculate the total erase frequency of the top M logical address segments with the highest erase frequency, where M is a positive integer; when the total erase frequency of the current M logical address segments is greater than a third threshold, it is determined that the data in the target solid-state drive meets the preset stratification conditions.

In some embodiments of the present application, the write module is used to sort the logical address segments according to the magnitude of the erase and write frequency of each logical address; and determine the frequency level of each logical address segment based on the sorting of the logical address segments.

In some embodiments of the present application, a write module is used to sort each physical storage area according to the degree of wear; determine the wear level of each physical storage area based on the sorting of each physical storage area; and determine a third physical storage area whose wear level matches the frequency level of the target logical address segment.

In some embodiments of the present application, a write module is used to pre-establish a correspondence between the frequency level and the wear level of the logical address segment; from the correspondence, determine the target wear level corresponding to the frequency level of the target logical address segment; and use the physical storage area with the target wear level as the third physical storage area.

In some embodiments of the present application, the second acquisition module is used to determine the plurality of logical locations corresponding to the first physical storage area. determining a target number of logical addresses corresponding to the first physical storage area; and determining a target erasing frequency of the first physical storage area according to the target sum and the target number.

In some embodiments of the present application, the second acquisition module is used to calculate a first ratio of the target sum value to the target quantity; calculate a second ratio of the first ratio to the target quantity, and use the second ratio as the target erase frequency.

In some embodiments of the present application, the second acquisition module is used to obtain the number of wear times of each physical storage area; determine the first wear deviation of the first physical storage area based on the number of wear times of each physical storage area; and determine the target wear degree based on the first wear deviation.

In some embodiments of the present application, the second acquisition module is used to determine an extreme wear count, an average wear count, and the wear count of the first physical storage area from the wear counts of each physical storage area; determine a first difference between the wear count and the extreme wear count of the first physical storage area, and a second difference between the average wear count and the extreme wear count; and determine a first wear deviation based on the ratio of the first difference to the second difference.

In some embodiments of the present application, the first judgment module is used to determine the matching degree between the target erasure frequency and the target wear degree; when the matching degree between the target erasure frequency and the target wear degree exceeds a second threshold, it is determined that the target erasure frequency and the target wear degree meet a preset matching condition.

In some embodiments of the present application, the first judgment module is used to determine a third ratio of the target erase frequency to the target wear degree; and determine the matching degree of the target erase frequency and the target wear degree based on the third ratio.

In some embodiments of the present application, a first judgment module is used to sort each physical storage area according to the erase and write frequency of each physical storage area, and determine the frequency level of each physical storage area based on the sorting of each physical storage area; sort each physical storage area according to the degree of wear, and determine the wear level of each physical storage area based on the sorting of each physical storage area; determine the matching degree of the target erase and write frequency and the target wear level according to the wear level and frequency level corresponding to the first physical storage area.

In some embodiments of the present application, the device further includes:

The update module is used to update the erasing and writing frequencies of the first physical storage area and the second physical storage area according to the transferred data after transferring the data in the first physical storage area to the second physical storage area for storage.

An embodiment of the present application also provides an electronic device, including a processor, a memory, and a computer program stored in the memory and capable of running on the processor, and the computer program implements the above wear leveling method when executed by the processor.

An embodiment of the present application further provides a non-volatile readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the above-mentioned wear leveling method is implemented.

The embodiments of the present application have the following advantages:

In the embodiment of the present application, the write-erase frequency of each logical address in the target solid-state hard disk can be obtained first; then, according to the write-erase frequency of multiple logical addresses corresponding to the first physical storage area, the target write-erase frequency of the first physical storage area is determined, and the target wear degree of the first physical storage area is obtained; then, it is determined whether the target write-erase frequency and the target wear degree meet the preset matching condition; if the target write-erase frequency and the target wear degree do not meet the preset matching condition, then a second physical storage area that meets the preset matching condition with the target write-erase frequency is determined from other physical storage areas except the first physical storage area, and the data in the first physical storage area is transferred to the second physical storage area for storage. By focusing on the relationship between the overall write-erase frequency of the physical storage area and the corresponding wear degree to perform wear leveling, the problem existing in the prior art of only focusing on the wear degree to perform wear leveling can be avoided, thereby improving the efficiency of wear leveling and avoiding the waste of the life of the solid-state hard disk.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solution of the present application, the drawings required for use in the description of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

FIG1 is a flowchart of a wear leveling method according to an embodiment of the present application;

FIG2 is a flowchart of another wear leveling method according to an embodiment of the present application;

FIG3 is a schematic diagram of a solid state drive according to an embodiment of the present application;

FIG4 is a flowchart of a data writing step according to an embodiment of the present application;

FIG5 is a schematic diagram of the structure of a wear leveling device according to an embodiment of the present application;

FIG6 is a schematic diagram of the structure of an electronic device according to an embodiment of the present application;

FIG. 7 is a schematic diagram of the structure of a non-volatile readable storage medium according to an embodiment of the present application.

Detailed ways

In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

In order to ensure the service life of the solid-state drive, wear leveling can be triggered when the degree of wear of each physical storage area differs; specifically, data in a physical storage area with less wear can be restored to other physical storage areas.

For example, when the maximum, minimum and average values of the wear degree of all blocks (i.e., physical storage areas) differ greatly, wear leveling needs to be triggered. At this time, the data in blockA with less wear can be moved to blockB with greater wear, and then blockA can be erased and used again to increase the wear of blockA and reduce the gap between the minimum wear degree and the average and maximum values.

The disadvantage of the above method is that after the wear degree of blockA increases, it may still be the smallest, so the newly written data in blockA needs to be moved to another blockC. Overall, the data storage result only exists in blockB and blockC, which is basically the same as directly writing the newly written data in blockA to blockC; however, a meaningless erasure is performed on blockA, which undoubtedly wastes the life of the SSD.

In order to improve the effect of wear leveling and avoid the situation of repeated wear of blocks, the embodiment of the present application provides a wear leveling method; it no longer determines wear leveling based only on the degree of wear, but determines whether wear leveling is needed based on the overall erase and write frequency of the physical storage area and the relationship between the corresponding degree of wear. Among them, the overall erase and write frequency of the physical storage area can represent the total erase and write frequency of all data stored in the physical storage area; the erase and write frequency is the frequency of erasing and writing.

When the overall write-erase frequency of a physical storage area does not match the corresponding degree of wear, it can be considered that wear leveling is required for the physical storage area; at this time, the data in the physical storage area can be transferred to another physical storage area whose wear degree matches the overall write-erase frequency of the physical storage area for storage; by focusing on the relationship between the overall write-erase frequency of the physical storage area and the corresponding degree of wear to perform wear leveling, the problems existing in the prior art of only focusing on the degree of wear to perform wear leveling can be avoided, thereby improving the efficiency of wear leveling and avoiding waste of the life of the solid-state hard drive.

1 , a flowchart of a wear leveling method according to an embodiment of the present application is shown, which may include the following steps:

Step 101: Obtain the write/erasure frequency of each logical address in the target solid-state hard disk, where the target solid-state hard disk includes multiple physical storage devices. Storage area.

The logical address may refer to the address of a memory unit, a storage unit, or a network host from the perspective of an application program, and the physical storage area may refer to a physical storage area in a target solid state drive for data storage.

The logical address may correspond to a piece of data, and the data may be written in a physical storage area of the target solid state drive; a plurality of pieces of data may be stored in one physical storage area.

In practical applications, in order to avoid the problems caused by only focusing on the degree of wear for wear leveling, the embodiments of the present application can focus on the overall erase frequency of the physical storage area and the corresponding degree of wear; thus, wear leveling is performed based on the relationship between the overall erase frequency of the physical storage area and the corresponding degree of wear.

Specifically, since each physical storage area stores multiple data, and the data has a one-to-one correspondence with the logical address in the target solid state drive, the write-erase frequency of each logical address in the target solid state drive can be obtained first.

As an example, the erasure frequency of each logical address may be counted in advance; specifically, the erasure frequency of data corresponding to the logical address may be counted in advance, and then the erasure frequency of the logical address may be determined based on the erasure frequency of the data corresponding to the logical address.

Among them, when counting the erase and write frequency of the data corresponding to the logical address, the erase and write frequency of the data can be determined based on the ratio of the number of erase and write times of the data to the total number of erase and write times of the target solid-state hard disk; further, the erase and write frequency of the logical address corresponding to the data can be determined based on the erase and write frequency of the data.

Step 102: Determine a target write/erase frequency of the first physical storage area according to the write/erase frequencies of a plurality of logical addresses corresponding to the first physical storage area, and obtain a target wear degree of the first physical storage area.

The first physical storage area may be any physical storage area in the target solid state drive.

When it is necessary to determine whether the first physical storage area needs to be wear leveled, the target erasing frequency of the first physical storage area may be determined according to the acquired erasing frequency of the logical address.

Specifically, since each physical storage area stores multiple data and each data corresponds to a logical address, when determining the target erase frequency of the first physical storage area, the multiple logical addresses corresponding to the multiple data corresponding to the first physical storage area can be determined first.

Then, the target write-erase frequency of the first physical storage area can be calculated based on the write-erase frequencies of the multiple logical addresses corresponding to the multiple data corresponding to the first physical storage area. For example, the sum of the write-erase frequencies of the multiple logical addresses can be used as the target write-erase frequency, or the average of the write-erase frequencies of the multiple logical addresses can be used as the target write-erase frequency, which is not limited in the embodiments of the present application.

While calculating the target write-erase frequency of the first physical storage area, the target wear degree of the first physical storage area can also be obtained.

Among them, the target wear degree can be used to represent the wear condition of the first physical storage area. The target wear degree can be determined based on the number of wear times of the first physical storage area, or based on the number of wear times of the first physical storage area and the number of wear times of other physical storage areas in the target solid state drive except the first physical storage area.

Step 103: Determine whether the target erasing frequency and the target wear degree meet a preset matching condition.

In actual applications, the higher the target write-erase frequency, the higher the write-erase frequency of the data stored in the first physical storage area; the lower the target write-erase frequency, the lower the write-erase frequency of the data stored in the first physical storage area. Compared with data with a low write-erase frequency, data with a high write-erase frequency will cause a high degree of wear on the physical storage area, which may lead to earlier damage to the physical storage area, thereby affecting the overall life of the target solid-state drive.

Therefore, after obtaining the target erasing frequency and target wear degree of the first physical storage area, the embodiment of the present application can It is determined whether the target write-erase frequency of the first physical storage area and the target wear degree of the first physical storage area meet a preset matching condition.

Specifically, if the target wear degree of the first physical storage area is high, it may indicate that the first physical storage area may be damaged earlier than other physical storage areas in the target solid state drive. For the first physical storage area that may be damaged earlier, if the target write-erase frequency is high, it may indicate that the write-erase frequency of the data stored in the first physical storage area is high, which may cause the first physical storage area to be damaged faster. In this case, it can be determined that the target write-erase frequency and the target wear degree do not meet the preset matching condition.

When it is determined that the target erasing frequency and the target wear degree do not meet the preset matching condition, it may indicate that the first physical storage area needs to be wear leveled. At this time, step 104 may be continued to be executed to perform wear leveling on the first physical storage area.

If the target wear degree of the first physical storage area is high and the target erasure frequency is low, it can be determined that the target erasure frequency and the target wear degree meet the preset matching condition.

When it is determined that the target erase frequency and the target wear degree meet the preset matching conditions, it can be indicated that the first physical storage area does not need wear leveling; at this time, step 101 can be performed for another physical storage area, and the embodiment of the present application does not limit this.

Step 104: When the target write-erase frequency and the target wear degree do not satisfy a preset matching condition, a second physical storage area that satisfies a preset matching condition with the target write-erase frequency is determined from other physical storage areas except the first physical storage area.

In practical applications, when it is determined that the target write-erase frequency and the target wear degree do not satisfy a preset matching condition, other physical storage areas except the first physical storage area in the target solid state drive may be determined first.

Then, the degree of wear corresponding to these other physical storage areas can be determined, and based on the degree of wear of each other physical storage area, a second physical storage area that meets the preset matching conditions with the target erase frequency can be determined; the second physical storage area can refer to a physical storage area whose degree of wear meets the preset matching conditions with the target erase frequency.

In some embodiments of the present application, when determining the second physical storage area, it is possible to determine one by one whether the degree of wear of other physical storage areas matches the target erase frequency; if the degree of wear of another physical storage area and the target erase frequency meet the preset matching conditions, then the other physical storage area can be used as the second physical storage area.

Step 105: Transfer the data in the first physical storage area to the second physical storage area for storage.

After the second physical storage area is determined, the data in the first physical storage area may be transferred to the determined second physical storage area for storage.

In actual applications, the above-mentioned wear leveling process can be simultaneously performed on all physical storage areas in the target solid-state hard disk; that is, when transferring data from the first physical storage area to the second physical storage area, it is also possible to transfer data from the second physical storage area to the third physical storage area, and transfer data from the third physical storage area to the first physical storage area; thereby, the degree of wear of each physical storage area and the erase and write frequency corresponding to each physical storage area meet the preset matching conditions.

It should be noted that the above-mentioned “first” and “second” are only for distinction and do not specifically refer to a certain physical storage address.

In the embodiment of the present application, the write-erase frequency of each logical address in the target solid-state hard disk can be obtained first; then, according to the write-erase frequency of multiple logical addresses corresponding to the first physical storage area, the target write-erase frequency of the first physical storage area is determined, and the target wear degree of the first physical storage area is obtained; then, it is determined whether the target write-erase frequency and the target wear degree meet the requirements. Preset matching conditions; if the target write-erase frequency and the target wear degree do not meet the preset matching conditions, then determine a second physical storage area that meets the preset matching conditions with the target write-erase frequency from other physical storage areas except the first physical storage area, and transfer the data in the first physical storage area to the second physical storage area for storage. By focusing on the relationship between the overall write-erase frequency of the physical storage area and the corresponding wear degree to perform wear leveling, the problem existing in the prior art of only focusing on the wear degree to perform wear leveling can be avoided, thereby improving the efficiency of wear leveling and avoiding the waste of the life of the solid-state hard disk.

2 , a flowchart of another wear leveling method according to an embodiment of the present application is shown, which may include the following steps:

Step 201: segment all logical addresses in the target solid state drive to obtain a plurality of logical address segments, each logical address segment including at least one logical address.

In actual applications, there may be more logical addresses in the target solid-state drive. If the corresponding erase and write frequencies are counted for each logical address, the target solid-state drive may need to invest more resources to store the erase and write frequencies corresponding to the logical addresses.

In order to improve the statistical efficiency of the erase and write frequency of the logical addresses, and to reduce the resources invested by the target solid-state drive in storing the erase and write frequency of the logical addresses, the embodiment of the present application can pre-segment all logical addresses in the target solid-state drive to obtain multiple logical address scores; wherein each logical address segment can include at least one logical address, and of course, can also include multiple logical addresses, and the embodiment of the present application does not limit this.

For example, the target solid state drive includes 1000 logical addresses. The 100 logical addresses are divided into 100 segments, and each logical address segment may include 10 logical addresses.

As shown in FIG. 3 , there are logical address segment 1 and logical address segment 2 ; logical address segment 1 includes logical address 1 and logical address 2 , and logical address segment 2 includes logical address 3 and logical address 4 .

Step 202: determine the erasing and writing frequency of each logical address segment, and use the erasing and writing frequency of the logical address segment as the erasing and writing frequency of each logical address included in the logical address segment.

After obtaining multiple logical address segments, the erasure frequency of each logical address segment can be determined respectively; the erasure frequency of a logical address segment can be determined based on the erasure status of data corresponding to all logical addresses in the logical address segment.

For example: logical address segment 1 includes logical address 1 and logical address 2; logical address segment 2 includes logical address 3 and logical address 4; when the data corresponding to logical address 1 is erased or written, the erase frequency of logical address segment 1 can be updated; at the same time, the updated erase frequency of logical address segment 1 is used as the erase frequency of logical address 1 and logical address 2.

In some embodiments of the present application, the erasing frequency of each logical address segment can be determined by the following sub-steps:

Sub-step 11: Count the total number of erase/write times of the target solid state drive and the number of segment erase/write times of each logical address segment.

First, the total number of erasures and writes of the target SSD may be counted based on the erasure and write operations of the user on the target SSD; the total number of erasures and writes may be the sum of the number of erasures and writes of all data stored in the target SSD.

At the same time, the segment erase count of each logical address segment can be counted according to the user's erase and write operations on the target solid state drive; the segment erase count can be the sum of the erase and write counts of data corresponding to all logical addresses in a logical address segment.

Continuing with the above example, the target SSD includes logical address segment 1 and logical address segment 2; logical address segment 1 includes logical address 1 and logical address 2; logical address segment 2 includes logical address 3 and logical address 4. When the data corresponding to logical address 1 is erased or written, the segment erase count of logical address segment 1 can be increased by one; the total erase count of the target SSD can be increased by one. The number of erase and write times is increased by one, and this embodiment of the present application does not impose any limitation on this.

Sub-step 12: When the total number of erasures exceeds the first threshold, the erasure frequency of each logical address segment is calculated according to the segment erasure number and the total erasure number.

Frequent calculation of the erase and write frequency not only wastes computing resources, but may also fail to accurately reflect the data erase and write status due to the small amount of data. Therefore, when calculating the erase and write frequency of each logical address segment, the embodiment of the present application first determines whether the total number of erase and write times of the target solid-state hard disk exceeds the first threshold. The first threshold can be determined according to actual conditions, for example: 10M.

If the total number of erasures and writes of the target solid state drive does not exceed the first threshold, the total number of erasures and writes and the number of segment erasures and writes continue to be counted.

If the total number of erasures and writes of the target solid-state hard disk exceeds the first threshold, the erasure frequency of each logical address segment may be calculated according to the segment erasure number and the total erasure number.

As an example, a write Ratio Stat data can be constructed, which stores the erase and write frequency of each logical address segment, the number of segment erase and write times, and the total erase and write times of the target solid state drive.

Whenever a user performs an erase operation, it is possible to first determine in which logical address segment the logical address of the data corresponding to the erase operation is located, and add one to the segment erase count of the logical address segment, and add one to the total erase count of the target solid-state drive. When the total erase count of the target solid-state drive exceeds a first threshold, the erase frequency of each logical address segment can be calculated.

In some embodiments of the present application, the data may change in real time. For example, the data that was frequently erased last month may be rarely erased this month. In order to more accurately reflect the real data erase situation, after calculating the erase frequency of each logical address segment, the following steps may be included:

Specifically, after calculating the erase and write frequency of each logical address segment, the total erase and write times of the target solid-state hard disk and the segment erase and write times of each logical address segment are cleared; then, the total erase and write times of the target solid-state hard disk and the segment erase and write times of each logical address segment are counted again.

Step 203: Determine a target write-erase frequency of the first physical storage area according to the write-erase frequencies of the plurality of logical addresses corresponding to the first physical storage area, and obtain a target wear degree of the first physical storage area.

When it is necessary to determine whether the first physical storage area needs to be wear leveled, the target erasing frequency of the first physical storage area may be determined according to the erasing frequency of the logical address.

Then, the target erasing frequency of the first physical storage area may be calculated based on the erasing frequencies of the plurality of logical addresses corresponding to the plurality of data corresponding to the first physical storage area.

In some embodiments of the present application, the target erase frequency can be determined by the following sub-steps:

Sub-step 21: Determine the target and value of the erase and write frequency of multiple logical addresses corresponding to the first physical storage area.

First, the logical addresses corresponding to the multiple data stored in the first physical storage area can be determined; then, the erasing frequency of the multiple logical addresses can be determined; the erasing frequency of the multiple logical addresses is the erasing frequency of the logical address segments corresponding to the multiple logical addresses.

For example: the multiple data stored in the first physical storage area correspond to logical address 1, logical address 3 and logical address 9 respectively; logical address 1 is located in logical address segment 1, logical address 3 is located in logical address segment 2, and logical address 9 is located in logical address segment 5.

At this time, the erase frequency of logical address segment 1, the erase frequency of logical address segment 2, and the erase frequency of logical address segment 5 can be determined; the erase frequency of logical address segment 1 is the erase frequency of logical address 1, the erase frequency of logical address segment 2 is the erase frequency of logical address 3, and the erase frequency of logical address 5 is the erase frequency of logical address 5.

After obtaining the erasing and writing frequencies of the plurality of logical addresses corresponding to the first physical storage area, the target and value of the erasing and writing frequencies of the plurality of logical addresses may be calculated.

Continuing with the previous example, after obtaining the erase frequencies of logical address 1, logical address 3, and logical address 9, the sum of the erase frequencies of logical address 1, logical address 3, and logical address 9 can be calculated and used as the target sum.

Sub-step 22: Determine the target number of logical addresses corresponding to the first physical storage area.

When calculating the target sum value, a target number of logical addresses corresponding to the first physical storage area may also be determined.

In some embodiments of the present application, since the logical address and the data are one-to-one corresponding, the target number can also be determined based on the number of data stored in the first physical storage area, and the embodiments of the present application are not limited to this.

Sub-step 23: Determine a target erasing frequency of the first physical storage area according to the target sum value and the target quantity.

After determining the target sum value and the target quantity, the target erasure frequency of the first physical storage area can be determined based on the target sum value and the target quantity. For example, the ratio of the target sum value and the target quantity can be used as the target erasure frequency of the first physical storage area.

As shown in Figure 3, the data of logical address 1 and logical address 3 are stored in physical storage area 1, and the data of logical address 2 and logical address 4 are stored in physical storage area 2; the erase frequency of physical storage area 1 can be calculated based on the erase frequency of logical address segment 1 and logical address segment 2.

In some embodiments of the present application, sub-step 23 can be implemented in the following manner:

A first ratio of the target sum value to the target quantity is calculated; a second ratio of the first ratio to the target quantity is calculated, and the second ratio is used as the target erase frequency.

In order to further reduce the resources invested in wear leveling, the target erase frequency may be identified with a smaller value through normalization; specifically, a first ratio of the target sum value to the target number may be calculated = target sum value/target number.

Then, a second ratio of the first ratio to the target number is calculated = the first ratio/the target number. After the second ratio is obtained, the second ratio can be used as the target write-erase frequency of the first physical storage area.

In some embodiments of the present application, the target wear degree can be obtained through the following sub-steps:

Sub-step 31: Obtain the number of wear times of each physical storage area.

First, the number of wear times of each physical storage area may be obtained.

It should be noted that the wear counts are changing in real time; therefore, when obtaining the wear counts of each physical storage area, the latest wear counts need to be obtained.

Sub-step 32: determining a first wear deviation of a first physical storage area according to the number of wears of each physical storage area.

Then, based on the number of wear times of each physical storage area, a first wear deviation of the number of wear times of the first physical storage area compared to the number of wear times of other physical storage areas in the target solid state drive may be determined.

In some embodiments of the present application, sub-step 32 can be implemented in the following manner:

From the wear times of each physical storage area, determine an extreme wear time, an average wear time, and a first physical determining a first difference between the wear count and the extreme wear count of the first physical storage area, and a second difference between the average wear count and the extreme wear count; and determining a first wear deviation according to a ratio of the first difference and the second difference.

After the wear counts of each physical storage area are determined, an extreme wear count and a wear count of the first physical storage area may be determined; the extreme wear count may be a maximum wear count or a minimum wear count.

Meanwhile, the average wear count of all physical storage areas may be calculated according to the wear count of each physical storage area.

After obtaining the extreme wear count, the wear count of the first physical storage area, and the average wear count, the first difference between the wear count of the first physical storage area and the extreme wear count = the wear count of the first physical storage area - the extreme wear count can be calculated; and the second difference between the average wear count and the extreme wear count = the average wear count - the extreme wear count can be calculated.

After obtaining the first difference and the second difference, a first wear deviation of the number of wear times of the first physical storage area compared to the number of wear times of other physical storage areas in the target solid state drive can be determined based on the ratio of the first difference and the second difference.

For example: first wear deviation = first difference / second difference.

Sub-step 33: determining a target wear degree according to the first wear deviation.

After determining the first wear deviation, the target wear degree of the first physical storage area can be determined based on the first wear deviation; for example: when the first wear deviation = 0, the number of wear times of the first physical storage area can be identified as being at a medium level among all physical storage areas of the target solid state drive; at this time, the first physical storage area is suitable for storing data whose erase and write frequency is also at a medium level.

For example: the target solid-state hard disk stores data 1, data 2, and data 3; the erase frequency of data 1 is 20%, the erase frequency of data 2 is 50%, and the erase frequency of data 3 is 30%; then the first physical storage area is suitable for storing data 3; if the data stored in the first physical storage area is data 1, wear leveling can be performed to transfer data 1 to other physical storage areas for storage, and transfer data 3 to the first physical storage area for storage, and the embodiments of the present application are not limited to this.

Step 204: Determine whether the target erase frequency and the target wear degree meet a preset matching condition.

After obtaining the target write/erase frequency and the target wear degree of the first physical storage area, it can be determined whether the target write/erase frequency of the first physical storage area and the target wear degree of the first physical storage area meet a preset matching condition.

Specifically, if the target wear degree of the first physical storage area is high, it may mean that the first physical storage area may be damaged earlier than other physical storage areas in the target solid state drive. For the first physical storage area that may be damaged earlier, if its target erase frequency is high, it may mean that the erase frequency of the data stored in the first physical storage area is high, which may cause the first physical storage area to be damaged faster. In this case, it can be determined that the target erase frequency and the target wear degree do not meet the preset matching condition.

When it is determined that the target erasing frequency and the target wear degree do not meet the preset matching condition, it may indicate that the first physical storage area needs to be wear leveled; at this time, step 205 may be continued to be executed to perform wear leveling on the first physical storage area.

When it is determined that the target erase frequency and the target wear degree meet the preset matching condition, it can be indicated that the first physical storage The storage area does not need to perform wear leveling; at this time, step 201 can be performed for another physical storage area, and this embodiment of the present application does not limit this.

In some embodiments of the present application, the following sub-steps may be used to determine whether the target erase frequency and the target wear degree meet the preset matching condition:

Sub-step 41: Determine the matching degree between the target erasing frequency and the target wear degree.

First, the matching degree between the target erasure frequency and the target wear degree may be calculated; the matching degree may be determined based on the numerical value of the target erasure frequency and the numerical value of the target wear degree.

In some embodiments of the present application, sub-step 41 can be implemented in the following manner:

A third ratio of the target erase frequency to the target wear degree is determined; and a matching degree of the target erase frequency to the target wear degree is determined based on the third ratio.

In practical applications, the third ratio of the target erase frequency to the target wear degree can be directly calculated as follows: target erase frequency/target wear degree.

After obtaining the third ratio, the degree of match between the target erase frequency and the target wear degree can be determined based on the third ratio; for example: if the third ratio deviates greatly from a preset value, it means that the degree of match between the target erase frequency and the target wear degree is smaller; if the third ratio deviates less from the preset value, it means that the degree of match between the target erase frequency and the target wear degree is higher.

In some embodiments of the present application, sub-step 41 can also be implemented in the following manner:

The physical storage areas are sorted according to their erase and write frequencies, and the frequency level of each physical storage area is determined based on the sorting; the physical storage areas are sorted according to their wear levels, and the wear level of each physical storage area is determined based on the sorting; and the matching degree of the target erase and write frequency and the target wear level is determined based on the wear level and frequency level corresponding to the first physical storage area.

First, the physical storage area segments may be sorted according to the magnitude of the erasing and writing frequencies of the physical storage areas; and the frequency level of each logical address segment may be determined based on the position of each logical address segment in the sorting.

At the same time, the physical storage areas may be sorted according to the degree of wear of the physical storage areas; and the wear level of each physical storage area may be determined based on the position of each physical storage area in the sorting.

Then, the frequency level corresponding to the target write-erase frequency of the first physical storage area may be determined, and the wear level corresponding to the target wear degree of the first physical storage area may be determined.

After the wear level and frequency level corresponding to the first physical storage area are obtained, the matching degree between the target write-erase frequency and the target wear degree may be determined based on the wear level and frequency level corresponding to the first physical storage area.

For example: the wear level is divided into high, medium and low; the higher the wear level, the more serious the wear of the physical storage area. The frequency level is divided into high, medium and low; the higher the frequency level, the more frequently the data in the physical storage area is erased and written. If the wear level corresponding to the first physical storage area is high and the frequency level is low, a higher value of the matching degree can be determined; and if the wear level corresponding to the first physical storage area is high and the frequency level is high, a lower value of the matching degree can be determined, and the embodiments of the present application do not limit this.

Sub-step 42: When the matching degree between the target writing/erasing frequency and the target wear degree exceeds a second threshold, it is determined that the target writing/erasing frequency and the target wear degree meet a preset matching condition.

In practical applications, a second threshold may be set for the matching degree, and the second threshold may be set according to actual conditions.

When the matching degree between the target erasing frequency and the target wear degree does not exceed the second threshold, it may indicate that the target erasing frequency and the target wear degree do not satisfy the preset matching condition; at this time, step 205 may be continued to perform wear leveling.

If the matching degree between the target erase frequency and the target wear degree exceeds the second threshold, it can be indicated that the target erase frequency and the target wear degree meet the preset matching condition; at this time, step 201 can be re-executed, and the embodiment of the present application does not limit this.

Step 205: When the target write-erase frequency and the target wear degree do not satisfy a preset matching condition, determine a second physical storage area that satisfies a preset matching condition with the target write-erase frequency from other physical storage areas except the first physical storage area.

Step 206: Transfer the data in the first physical storage area to the second physical storage area for storage.

Step 207: After transferring the data in the first physical storage area to the second physical storage area for storage, update the write-erase frequency of the first physical storage area and the second physical storage area according to the transferred data.

In actual applications, after the data in the first physical storage area is transferred to the second physical storage area for storage, the data in the first physical storage area and the second physical storage area are changed; at this time, the data in the first physical storage area can be transferred to the second physical storage area for storage according to the transferred data (that is, the data transferred from the first physical storage area to the second physical storage area).

In some embodiments of the present application, after wear leveling is completed on all physical storage areas, the erase and write frequency of each physical storage area may be updated, but the embodiments of the present application do not limit this.

In an embodiment of the present application, all logical addresses in the target solid-state hard disk may be segmented to obtain a plurality of logical address segments, each logical address segment including at least one logical address; then, the erase and write frequencies of each logical address segment are determined, and the erase and write frequencies of the logical address segments are used as the erase and write frequencies of each logical address included in the logical address segment; thereafter, the target erase and write frequency of the first physical storage area is determined according to the erase and write frequencies of the plurality of logical addresses corresponding to the first physical storage area, and the target degree of wear of the first physical storage area is obtained, and it is determined whether the target erase and write frequency and the target degree of wear meet a preset matching condition; when the target erase and write frequency and the target degree of wear do not meet the preset matching condition, a second physical storage area that meets the preset matching condition with the target erase and write frequency is determined from other physical storage areas except the first physical storage area; the data in the first physical storage area is transferred to the second physical storage area for storage; after the data in the first physical storage area is transferred to the second physical storage area for storage, the data in the first physical storage area is stored in the second physical storage area according to the transferred data. The physical storage area and the second physical storage area are updated in erasing and writing frequency. Through the embodiment of the present application, the amount of data required for wear leveling of the solid state drive is reduced, so that the solid state drive can use fewer resources to store the data required for wear leveling.

In actual applications, if wear leveling is performed on the physical storage areas, the number of wear times of each physical storage area will eventually increase, thereby affecting the service life of the target solid-state drive. Therefore, in order to reduce the number of wear leveling times, the writing of data can be intervened in advance. Specifically, the following embodiments can be referred to:

Referring to FIG. 4 , a flowchart of a data writing step in an embodiment of the present application is shown, which may include the following steps:

Step 401: Determine whether the data in the target solid state drive meets a preset tiering condition based on the write-erase frequency of each logical address segment.

In actual applications, the logical address segments in the target SSD may be stratified; for example, the total erase frequency of 20% of the logical address segments is 80%, while the total erase frequency of the other 80% of the logical address segments is 20%. In view of this stratification, if data that is frequently erased is written into the 20% logical address segments, it may aggravate the wear of the physical storage area corresponding to the 20% logical address segments, thereby affecting the service life of the target SSD.

In order to avoid this situation, the embodiment of the present application can determine in advance whether the data stored in the target solid-state drive meets the preset tiering conditions according to the erase and write frequencies of each logical address segment.

In some embodiments of the present application, the following sub-steps may be used to determine whether the data in the target solid-state drive meets the preset tiering condition:

Sub-step 51, determining the first M logical address segments with the highest erasure frequency, and calculating the total erasure frequency of the first M logical address segments with the highest erasure frequency, where M is a positive integer.

First, the first M logical address segments with the highest erasure frequency can be determined from all logical address segments; M can be a preset positive integer, for example, when there are 100 logical address segments, M can be set to 25.

After determining the first M logical address segments with the highest erasure frequencies, the erasure frequencies of these logical address segments can be determined, and based on the erasure frequencies of these logical address segments, the total erasure frequency of the first M logical address segments with the highest erasure frequencies can be calculated.

Sub-step 52: When the total erase/write frequency of the current M logical address segments is greater than a third threshold, it is determined that the data in the target solid state drive meets a preset tiering condition.

After obtaining the total erase frequency of the top M logical address segments with the highest erase frequency, based on the relationship between the total erase frequency and a third threshold, it is determined whether the data in the target solid state drive meets the preset stratification conditions; wherein the third threshold can be set according to actual conditions, for example: 60%.

If the total erasure frequency of the first M logical address segments with the highest erasure frequency is greater than the third threshold, it can be determined that the data in the target solid state drive meets the preset tiering condition; at this time, step 402 can be executed.

If the total erasure frequency of the first M logical address segments with the highest erasure frequency is not greater than the third threshold, it can be determined that the data in the target solid state drive does not meet the preset tiering condition; at this time, step 405 is executed.

Step 402: When the data in the target solid state drive meets the preset tiering condition, the frequency level of each logical address segment is determined according to the write-erase frequency of each logical address segment.

If it is determined that the data in the target solid state drive meets the preset tiering condition, the frequency level of each logical address segment can be determined based on the write-erase frequency of each logical address segment.

In some embodiments of the present application, the frequency level of each logical address segment may be determined by the following sub-steps:

Sub-step 61 : sorting the logical address segments according to the erase and write frequencies of the logical addresses.

First, the logical address segments can be sorted according to the erase and write frequency of each logical address; the sorting can be arranged in order from large to small, or in order from small to high, and the embodiment of the present application does not limit this.

Sub-step 62: Determine the frequency level of each logical address segment based on the ranking of each logical address segment.

After the ranking of the logical address segments is obtained, the frequency level of a logical address segment may be determined based on the position of the logical address segment in the ranking.

Step 403: for the target data to be written into the physical storage area, determine the target logical address segment corresponding to the target data.

When receiving target data to be written into a physical storage area by a user, the target logical address fractional segment into which the target data is written may be determined first.

Step 404: Determine a corresponding third physical storage area according to the frequency level of the target logical address segment, and write the target data into the third physical storage area.

Then, the frequency level corresponding to the target logical address segment can be determined; after determining the frequency level corresponding to the target logical address segment, a third physical storage area can be determined according to the frequency level corresponding to the target logical address segment.

For example, the frequency level of the logical address segment includes high, medium and low. The higher the frequency level, the more frequently the data corresponding to the logical address segment is erased and written. When the frequency level corresponding to the target logical address segment is high, the FTL can apply to write the target data into a physical storage area with a lower wear level; this physical storage area is the third physical storage area.

In some embodiments of the present application, the frequency levels corresponding to the logical address segments can also be simply divided into high and low; then, the first N logical address segments with the highest erase frequency can be selected, and the frequency levels of these N logical address segments can be set to high, and the frequency levels of other logical address segments can be set to low; wherein, the sum of the erase frequencies of these N logical address segments needs to be greater than or equal to a third threshold, and N is a positive integer.

After determining the third physical storage area, the target data can be written into the third physical storage area; compared with randomly writing the target data into the physical storage area, the embodiment of the present application can determine the corresponding third physical storage area by the frequency level of the target logical address segment in which the target data is written; thereby storing the target data in a more suitable physical storage area, thereby avoiding writing data that is frequently erased and written into a physical storage area with a higher degree of wear.

In some embodiments of the present application, after the target data is written into the third physical storage area, the wear degree and erase frequency corresponding to the third physical storage area can be updated; wherein, when the third physical storage area is full, the erase frequency of the third physical storage area can be saved in the data structure of the third physical storage area.

In some embodiments of the present application, the third physical storage area may be determined by the following sub-steps:

Sub-step 71: sort the physical storage areas according to the degree of wear.

First, the physical storage areas may be sorted according to the degree of wear of the physical storage areas.

Sub-step 72: Determine the wear level of each physical storage area based on the ranking of each physical storage area.

After the physical storage areas are sorted, the wear level of each physical storage area may be determined based on the position of each physical storage area in the sort.

Sub-step 73: Determine a third physical storage area whose wear level matches the frequency level of the target logical address segment.

After the wear level of each physical storage area is obtained, a physical storage area whose wear level matches the frequency level of the target logical address segment may be determined and used as the third physical storage area.

In some embodiments of the present application, sub-step 73 is implemented in the following manner:

A correspondence between the frequency level and the wear level of the logical address segment is established in advance; from the correspondence, a target wear level corresponding to the frequency level of the target logical address segment is determined; and a physical storage area having the target wear level is used as a third physical storage area.

First, a correspondence between the frequency level and the wear level of the logical address segment can be established in advance; this correspondence can ensure that data with a high frequency level can be stored in a physical storage area with a low wear level, and that data with a low frequency level can be stored in a physical storage area with a high wear level; thereby reducing the wear leveling operation on the target solid state drive.

Step 405: When the data in the target solid state drive does not meet the preset tiering condition, the erase and write frequencies of each logical address segment are cleared, and the erase and write frequencies of each logical address segment are recalculated.

In actual applications, if the data in the target solid-state drive does not meet the preset stratification conditions, the erase frequency of each logical address segment can be cleared; then, the erase frequency of each logical address segment can be recalculated based on the number of segment erases of each logical address segment and the total number of erases of the target solid-state drive.

In some embodiments of the present application, when recalculating the erase frequency of each logical address segment, the erase frequency of the previously erased logical address segment can be used as a reference; for example: the erase frequency of each logical address segment can be calculated based on the old erase frequency and the new erase frequency of the logical address segment, and the embodiments of the present application do not limit this.

In the embodiment of the present application, it is possible to determine in advance whether the data in the target solid-state hard disk meets the preset stratification conditions according to the erasing frequency of each logical address segment; when the data in the target solid-state hard disk meets the preset stratification conditions, the frequency level of each logical address segment is determined according to the erasing frequency of each logical address segment; for the target data to be written into the physical storage area, the target logical address segment corresponding to the target data can be determined; according to the frequency level of the target logical address segment, the corresponding third physical storage area is determined, and the target data is written into the third physical storage area; and when the data in the target solid-state hard disk does not meet the preset stratification conditions, the erasing frequency of each logical address segment is cleared, and the erasing frequency of each logical address segment is recalculated. The embodiment of the present application determines the corresponding third physical storage area by the frequency level of the target logical address segment into which the target data is written; thereby storing the target data in a more suitable physical storage area, thereby avoiding writing data that is frequently erased into a physical storage area with a higher degree of wear.

It should be noted that, for the method embodiments, for the sake of simplicity, they are all expressed as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present application are not limited by the described action sequence, because according to the embodiments of the present application, certain steps can be performed in other sequences or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present application.

5 , a schematic diagram of the structure of a wear leveling device according to an embodiment of the present application is shown, which may include the following modules:

A first acquisition module 501 is used to acquire the erase and write frequency of each logical address in a target solid state drive, where the target solid state drive includes multiple physical storage areas;

A second acquisition module 502 is used to determine a target write/erase frequency of the first physical storage area according to the write/erase frequencies of the plurality of logical addresses corresponding to the first physical storage area, and to acquire a target wear degree of the first physical storage area;

The first judgment module 503 is used to judge whether the target erasure frequency and the target wear degree meet the preset matching condition;

A first determination module 504 is used to determine, from other physical storage areas except the first physical storage area, a second physical storage area that meets the preset matching condition with the target erasure frequency when the target erasure frequency and the target wear degree do not meet the preset matching condition;

The transfer module 505 is used to transfer the data in the first physical storage area to the second physical storage area for storage.

In some embodiments of the present application, the first acquisition module 501 is used to segment all logical addresses in the target solid-state hard disk to obtain multiple logical address segments, each logical address segment includes at least one logical address; determine the erase and write frequency of each logical address segment, and use the erase and write frequency of the logical address segment as the erase and write frequency of each logical address included in the logical address segment.

In some embodiments of the present application, the first acquisition module 501 is used to count the total number of erase and write times of the target solid-state hard disk, and the number of segment erase and write times of each logical address segment; when the total number of erase and write times exceeds the first threshold, the erase and write frequency of each logical address segment is calculated based on the segment erase and write times and the total erase and write times.

In some embodiments of the present application, the device further includes:

A write module is used to determine whether the data in the target solid-state hard disk meets the preset stratification conditions according to the erase and write frequencies of each logical address segment; when the data in the target solid-state hard disk meets the preset stratification conditions, determine the frequency level of each logical address segment according to the erase and write frequencies of each logical address segment; for the target data to be written into the physical storage area, determine the target logical address segment corresponding to the target data; determine the corresponding third physical storage area according to the frequency level of the target logical address segment, and write the target data into the third physical storage area.

In some embodiments of the present application, the device further includes:

In some embodiments of the present application, the second acquisition module 502 is used to determine the target and value of the erase and write frequencies of multiple logical addresses corresponding to the first physical storage area; determine the target number of logical addresses corresponding to the first physical storage area; and determine the target erase and write frequency of the first physical storage area based on the target and value and the target number.

In some embodiments of the present application, the second acquisition module 502 is used to calculate a first ratio of the target sum value to the target quantity; calculate a second ratio of the first ratio to the target quantity, and use the second ratio as the target erase frequency.

In some embodiments of the present application, the second acquisition module 502 is used to obtain the number of wear times of each physical storage area; determine the first wear deviation of the first physical storage area based on the number of wear times of each physical storage area; and determine the target wear degree based on the first wear deviation.

In some embodiments of the present application, the second acquisition module 502 is used to determine an extreme wear count, an average wear count, and the wear count of the first physical storage area from the wear counts of each physical storage area; determine a first difference between the wear count and the extreme wear count of the first physical storage area, and a second difference between the average wear count and the extreme wear count; and determine a first wear deviation based on the ratio of the first difference to the second difference.

In some embodiments of the present application, the first judgment module 503 is used to determine the matching degree between the target erasure frequency and the target wear degree; when the matching degree between the target erasure frequency and the target wear degree exceeds a second threshold, it is determined that the target erasure frequency and the target wear degree meet a preset matching condition.

In some embodiments of the present application, the first judgment module 503 is used to determine a third ratio of the target erase frequency to the target wear degree; and determine the matching degree of the target erase frequency and the target wear degree according to the third ratio.

In some embodiments of the present application, the first judgment module 503 is used to sort each physical storage area according to the erase and write frequency of each physical storage area, and determine the frequency level of each physical storage area based on the sorting of each physical storage area; sort each physical storage area according to the degree of wear, and determine the wear level of each physical storage area based on the sorting of each physical storage area; determine the matching degree of the target erase and write frequency and the target wear level according to the wear level and frequency level corresponding to the first physical storage area.

In some embodiments of the present application, the device further includes:

The update module is used to update the erasing frequency of the first physical storage area and the second physical storage area according to the transferred data after transferring the data in the first physical storage area to the second physical storage area for storage.

An embodiment of the present application also provides an electronic device, as shown in FIG6 , the electronic device 6 includes a processor 601, a memory 602, and a computer program stored in the memory 602 and capable of running on the processor, and the computer program implements the above wear leveling method when executed by the processor.

The embodiment of the present application further provides a non-volatile readable storage medium, as shown in FIG. 7 , the non-volatile readable storage medium 7 stores a computer program 701 , and the computer program 701 implements the above wear leveling method when executed by a processor.

As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

It should be understood by those skilled in the art that the embodiments of the present application may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present application may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present application may take the form of a computer program implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code. The form of the sequence product.

The present application embodiment is described with reference to the flowchart and/or block diagram of the method, terminal device (system) and computer program product according to the embodiment of the present application. It should be understood that each process and/or box in the flowchart and/or block diagram, and the combination of the process and/or box in the flowchart and/or block diagram can be realized by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing terminal device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device produce a device for realizing the function specified in one process or multiple processes in the flowchart and/or one box or multiple boxes in the block diagram.

These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device that implements the functions specified in one or more processes in the flowchart and/or one or more boxes in the block diagram.

These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce computer-implemented processing, so that the instructions executed on the computer or other programmable terminal device provide steps for implementing the functions specified in one or more processes in the flowchart and/or one or more boxes in the block diagram.

Although the preferred embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present application.

Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

The above provides a detailed introduction to a wear leveling method, device, electronic device and storage medium. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for a person skilled in the art, according to the idea of the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

A wear leveling method, characterized in that the method comprises:

Obtaining the write-erase frequency of each logical address in a target solid-state hard disk, wherein the target solid-state hard disk includes a plurality of physical storage areas;

Determine a target write-erase frequency of the first physical storage area according to the write-erase frequencies of a plurality of logical addresses corresponding to the first physical storage area, and obtain a target wear degree of the first physical storage area;

Determining whether the target erasing frequency and the target wear degree meet a preset matching condition;

When the target write-erase frequency and the target wear degree do not satisfy the preset matching condition, determining a second physical storage area that satisfies the preset matching condition with the target write-erase frequency from other physical storage areas except the first physical storage area;

The data in the first physical storage area is transferred to the second physical storage area for storage.
The method according to claim 1, wherein obtaining the erase and write frequency of each logical address in the target solid-state drive comprises:

Segmenting all logical addresses in the target solid state drive to obtain a plurality of logical address segments, each logical address segment including at least one logical address;

The erasing and writing frequency of each logical address segment is determined, and the erasing and writing frequency of the logical address segment is used as the erasing and writing frequency of each logical address included in the logical address segment.
The method according to claim 2, characterized in that the step of determining the erasing and writing frequency of each logical address segment comprises:

Counting the total number of erase/write times of the target solid-state hard disk and the number of segment erase/write times of each logical address segment;

When the total number of erasures exceeds a first threshold, the erasure frequency of each logical address segment is calculated according to the segment erasure number and the total number of erasures.
The method according to claim 3, characterized in that the method further comprises:

The total erase/write times and the segment erase/write times are cleared, and the total erase/write times of the target solid-state hard disk and the segment erase/write times of each logical address segment are counted again.
The method according to claim 3, characterized in that the method further comprises:

Determining whether the data in the target solid-state hard disk meets a preset tiering condition according to the erase and write frequency of each logical address segment;

When the data in the target solid state drive meets the preset tiering condition, determining the frequency level of each logical address segment according to the erasing and writing frequency of each logical address segment;

For target data to be written into the physical storage area, determining a target logical address segment corresponding to the target data;

According to the frequency level of the target logical address segment, a corresponding third physical storage area is determined, and the target data is written into the third physical storage area.
The method according to claim 5, characterized in that the method further comprises:

When the data in the target solid state drive does not meet the preset stratification condition, the write-erase frequency of each logical address segment is cleared, and the write-erase frequency of each logical address segment is recalculated.
The method according to claim 5, characterized in that judging whether the data in the target solid-state drive meets a preset tiering condition according to the erasing and writing frequency of each logical address segment comprises:

Determine the top M logical address segments with the highest erase and write frequency, and calculate the top M logical addresses with the highest erase and write frequency The total erasure frequency of the segment, M is a positive integer;

When the total write-erasure frequency of the first M logical address segments is greater than a third threshold, it is determined that the data in the target solid state drive meets a preset tiering condition.
The method according to claim 5, characterized in that the step of determining the frequency level of each logical address segment according to the erasing and writing frequency of each logical address segment comprises:

Sort the logical address segments according to the erase and write frequencies of the logical addresses;

Based on the ranking of the logical address segments, a frequency rank of the logical address segments is determined.
The method according to claim 8, characterized in that the step of determining the corresponding third physical storage area according to the frequency level of the target logical address segment comprises:

Sort each physical storage area according to the degree of wear;

Determine the wear level of each physical storage area based on the ranking of each physical storage area;

A third physical storage area having a wear level matching the frequency level of the target logical address segment is determined.
The method according to claim 9, characterized in that the determining of the third physical storage area whose wear level matches the frequency level of the target logical address segment comprises:

Pre-establishing the correspondence between the frequency level and the wear level of the logical address segment;

From the corresponding relationship, determining a target wear level corresponding to the frequency level of the target logical address segment;

A physical storage area having the target wear level is used as the third physical storage area.
The method according to claim 1, characterized in that the step of determining a target erase/write frequency of the first physical storage area according to the erase/write frequencies of a plurality of logical addresses corresponding to the first physical storage area comprises:

Determine targets and values of erase and write frequencies of a plurality of logical addresses corresponding to the first physical storage area;

Determining a target number of logical addresses corresponding to the first physical storage area;

A target erasing frequency of the first physical storage area is determined according to the target sum value and the target quantity.
The method according to claim 11, characterized in that the step of determining the target erasing frequency of the first physical storage area according to the target value and the target quantity comprises:

calculating a first ratio of the target sum value to the target quantity;

A second ratio of the first ratio to the target number is calculated, and the second ratio is used as the target erasing frequency.
The method according to claim 1, characterized in that obtaining the target wear degree of the first physical storage area comprises:

Get the number of wear times of each physical storage area;

Determining a first wear deviation of the first physical storage area according to the number of wears of each physical storage area;

The target wear degree is determined according to the first wear deviation.
The method according to claim 13, wherein determining the first wear deviation of the first physical storage area according to the number of wears of each physical storage area comprises:

Determine an extreme wear count, an average wear count, and the wear count of the first physical storage area from the wear counts of each physical storage area;

Determine a first difference between the number of times the first physical storage area is worn and the number of times the extreme wear is worn, and a second difference between the average number of times the first physical storage area is worn and the number of times the extreme wear is worn;

The first wear deviation is determined based on a ratio of the first difference to the second difference.
The method according to claim 13, characterized in that the determination of the target erasing frequency and the Whether the target wear level meets the preset matching conditions, including:

Determining a matching degree between the target erasing frequency and the target wear degree;

When the matching degree between the target erasing frequency and the target wear degree exceeds a second threshold, it is determined that the target erasing frequency and the target wear degree satisfy a preset matching condition.
The method according to claim 15, characterized in that the determining the matching degree between the target erase frequency and the target wear degree comprises:

determining a third ratio of the target erasure frequency to the target wear degree;

The matching degree between the target erasing frequency and the target wear degree is determined according to the third ratio.
The method according to claim 15, characterized in that the determining the matching degree between the target erase frequency and the target wear degree comprises:

Sort the physical storage areas according to the magnitude of the erase and write frequencies of the physical storage areas, and determine the frequency level of the physical storage areas based on the sorting of the physical storage areas;

Sort the physical storage areas according to the degree of wear, and determine the wear level of each physical storage area based on the sort of the physical storage areas;

According to the wear level and frequency level corresponding to the first physical storage area, the matching degree between the target write-erase frequency and the target wear degree is determined.
The method according to claim 1, characterized in that after transferring the data in the first physical storage area to the second physical storage area for storage, the method further comprises:

The write-erase frequencies of the first physical storage area and the second physical storage area are updated according to the transferred data.
A wear leveling device, characterized in that the device comprises:

A first acquisition module is used to acquire the erase and write frequency of each logical address in a target solid-state hard disk, wherein the target solid-state hard disk includes multiple physical storage areas;

A second acquisition module, configured to determine a target write-erase frequency of the first physical storage area according to the write-erase frequencies of a plurality of logical addresses corresponding to the first physical storage area, and to acquire a target wear degree of the first physical storage area;

A first judgment module is used to judge whether the target erasure frequency and the target wear degree meet a preset matching condition;

A first determination module is used to determine, from other physical storage areas except the first physical storage area, a second physical storage area that meets the preset matching condition with the target erasure frequency when the target erasure frequency and the target wear degree do not meet the preset matching condition;

The transfer module is used to transfer the data in the first physical storage area to the second physical storage area for storage.
An electronic device, characterized in that it includes a processor, a memory, and a computer program stored in the memory and capable of running on the processor, wherein when the computer program is executed by the processor, the wear leveling method as described in any one of claims 1 to 18 is implemented.
A non-volatile readable storage medium, characterized in that a computer program is stored on the non-volatile readable storage medium, and when the computer program is executed by a processor, the wear leveling method as described in any one of claims 1 to 18 is implemented.