WO2024093737A1 - Gamma imaging device and imaging method thereof - Google Patents
Gamma imaging device and imaging method thereof Download PDFInfo
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- WO2024093737A1 WO2024093737A1 PCT/CN2023/126255 CN2023126255W WO2024093737A1 WO 2024093737 A1 WO2024093737 A1 WO 2024093737A1 CN 2023126255 W CN2023126255 W CN 2023126255W WO 2024093737 A1 WO2024093737 A1 WO 2024093737A1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
- G01T1/164—Scintigraphy
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
Definitions
- the present disclosure relates to the field of radiation imaging technology, and in particular to a gamma imaging device and an imaging method thereof.
- Gamma imaging requires that the detector unit has obvious response differences to photons from different directions, that is, when the incident direction of the photons changes, the photon count (detection efficiency) in a certain detector unit also changes greatly.
- mechanical collimators are usually used traditionally to achieve response differences in different directions, but because the mechanical collimator blocks a large part of the photons from entering the detector, the overall detection efficiency will be seriously reduced, and the mechanical collimator is large in size and weight, making the overall detector bulky and not light, and the use scenario is also relatively limited; the existing method of using multi-layer detector units to block the front and back "self-collimation" will cause response differences.
- the detector structure is complex and the number of electronic readout channels is large, which often leads to a large imaging device or high cost.
- the present disclosure provides a gamma imaging device and an imaging method thereof.
- a gamma imaging device which includes a detector, the detector including a single crystal bar, the single crystal bar is used to move relative to the imaging field of view to detect incident gamma photons in the imaging field of view, and to collimate the incident gamma photons for gamma imaging, wherein the length-to-width ratio of the single crystal bar is greater than 10:1.
- the detection efficiency of gamma photons incident normally on the front end of a single crystal bar close to the imaging field of view is lower than the detection efficiency of gamma photons incident obliquely on other parts far from the imaging field of view; wherein, The distance between the front end face of a single crystal bar close to the imaging field of view and the imaging field of view is less than or equal to 100 mm.
- the detector further comprises a first photoelectric device.
- the first photoelectric device is coupled to a far end of the single crystal bar away from the imaging field of view and is used to read out the gamma photon deposition data in the single crystal bar.
- the surface roughness of at least one side surface of a single crystal bar is less than or equal to 0.01 micrometer.
- the detector further comprises a second photoelectric device, which is coupled to the front end of the single crystal bar near the imaging field of view and is used to cooperate with the first photoelectric device to read out the gamma photon deposition data and obtain the energy spectrum in different gamma photon deposition depth directions.
- a second photoelectric device which is coupled to the front end of the single crystal bar near the imaging field of view and is used to cooperate with the first photoelectric device to read out the gamma photon deposition data and obtain the energy spectrum in different gamma photon deposition depth directions.
- the detector further comprises at least one third optoelectronic device.
- the at least one third optoelectronic device is coupled to at least one side surface of the single crystal bar.
- the single crystal bar comprises a plurality of first crystal blocks and a plurality of second crystal blocks.
- the plurality of second crystal blocks and the plurality of first crystal blocks are arranged alternately to form a crystal bar structure.
- the first crystal block and the second crystal block are scintillator materials; or the first crystal block is scintillator material and the second crystal block is photoconductive material; wherein the emission spectrum and absorption spectrum of the scintillator material partially overlap, and the refractive index of the photoconductive material is greater than or equal to 1.5.
- a single crystal bar may include a columnar structure having a quadrilateral, rhombus, triangle, heart or V shape in a side view.
- the detector further comprises a refractive layer and/or an absorption layer.
- the refractive layer is covered on the front end face of the single crystal bar close to the imaging field of view, and the refractive index of the refractive layer is greater than the refractive index of the scintillator material of the single crystal bar, and is used to refract the scintillation photons generated by the incident gamma photons, thereby increasing the loss of the scintillation photons on the front end face;
- the absorption layer is covered on the front end face of the single crystal bar close to the imaging field of view, or is covered on the refractive layer, and is used to absorb the scintillation photons generated by the incident gamma photons, thereby increasing the loss of the scintillation photons on the front end face.
- the first crystal block and the second crystal block of a single crystal bar have different doping ion concentrations and/or dopant materials, and the doping ion concentration is 0.01% to 0.6%.
- the detector further comprises a blocking layer, which is coupled to the front end face of the single crystal bar close to the imaging field of view to block gamma photons incident normally toward the front end face.
- a blocking layer which is coupled to the front end face of the single crystal bar close to the imaging field of view to block gamma photons incident normally toward the front end face.
- a gamma imaging device which includes a crystal bar array composed of at least one single crystal bar and a first circuit board.
- the crystal bar array composed of at least one single crystal bar is used to move relative to the imaging field of view to detect incident gamma photons in the imaging field of view, and to collimate the incident gamma photons to achieve gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10:1;
- the first circuit board is coupled to the far end of the crystal bar array away from the imaging field of view, and is used to output detection data of the crystal bar array on the imaging field of view.
- the gamma imaging device further comprises a second circuit board, which is coupled to the front end of the crystal bar array away from the imaging field of view and is used to cooperate with the first circuit board to output detection data of the crystal bar array on the imaging field of view.
- a second circuit board which is coupled to the front end of the crystal bar array away from the imaging field of view and is used to cooperate with the first circuit board to output detection data of the crystal bar array on the imaging field of view.
- the gamma imaging device further comprises a scintillation crystal layer, which is located between the first circuit board and the distal end surface of the crystal bar array to receive the remaining scintillation photons passing through the crystal bar array.
- a scintillation crystal layer which is located between the first circuit board and the distal end surface of the crystal bar array to receive the remaining scintillation photons passing through the crystal bar array.
- Another aspect of the present disclosure provides an imaging method of the above-mentioned gamma imaging device.
- the present disclosure provides a gamma imaging device and an imaging method thereof, wherein the gamma imaging device includes a detector, the detector includes a single crystal bar, the single crystal bar is used to move relative to the imaging field of view to detect incident gamma photons in the imaging field of view, realize collimation of the incident gamma photons, and realize gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10: 1. Therefore, based on the above-mentioned gamma imaging device, a new detector mode is established, which completely abandons the existing low-efficiency and bulky external mechanical collimator, greatly simplifies the limitations of the traditional complex detector structure and multiple electronic structures, and can also have a highly sensitive minimalist gamma imaging detection device.
- FIG1 schematically shows a composition diagram of a single crystal bar 101 as a detector and an imaging field of view FOV of a gamma imaging device according to an embodiment of the present disclosure
- FIG2 schematically shows an imaging detection principle diagram of a conventional mechanical collimator 201 and a detector 202 of an existing gamma imaging device relative to the radiation source position and a corresponding SRF curve diagram;
- FIG3 schematically shows an imaging detection principle diagram of a single crystal bar 301 as a detector relative to a radiation source position of a gamma imaging device according to an embodiment of the present disclosure and a corresponding SRF curve diagram;
- FIG4 schematically shows a rotation detection diagram of a single crystal bar 401 according to an embodiment of the present disclosure
- FIG5 schematically shows a top view of a single crystal bar 501 as a detector for movement detection relative to an imaging field of view FOV according to an embodiment of the present disclosure
- FIG6A schematically shows a structural perspective view of a single crystal bar 601 according to an embodiment of the present disclosure
- FIG6B schematically shows a perspective view of the structure of a single crystal bar 602 according to an embodiment of the present disclosure
- FIGS. 7A-7G schematically show side views of the structures of single crystal bars 701a-701g according to an embodiment of the present disclosure
- FIG8A schematically shows an imaging composition diagram of a crystal bar array 801 of a gamma imaging device relative to an imaging field of view FOV according to another embodiment of the present disclosure
- FIG8B schematically shows an imaging composition diagram of a crystal bar array 802 of a gamma imaging device relative to an imaging field of view FOV according to another embodiment of the present disclosure
- FIG9 schematically shows a principle diagram of performing two-dimensional lattice translation sampling of a single crystal bar 901 along a direction parallel to the FOV in a gamma imaging method according to an embodiment of the present disclosure
- FIG10A shows a thermal cylindrical reconstructed image in which the imaging field of view FOV of a gamma imaging device according to an embodiment of the present disclosure meets a diameter of 40 mm and the distance between the detector and the FOV meets a diameter of 45 mm;
- FIG10B shows a thermal cylindrical reconstructed image in which the imaging field of view FOV of the gamma imaging device according to an embodiment of the present disclosure satisfies a diameter of 100 mm and the distance between the detector and the FOV satisfies a distance of 45 mm;
- FIG. 11 shows a diagram of the reconstructed image effect of a single point source, two point sources, and four point sources with a spacing of 6 mm according to an actual prototype device of a gamma imaging device according to an embodiment of the present disclosure.
- modules in the devices in the embodiments may be adaptively changed and placed in one or more devices different from the embodiments.
- the modules or units or components in the embodiments may be combined into one module or unit or component, and further they may be divided into a plurality of sub-modules or sub-units or sub-components.
- All features disclosed in this specification including the accompanying claims, abstract and drawings) and all processes or units of any method or device so disclosed may be combined in any combination, except that at least some of such features and/or processes or units are mutually exclusive.
- each feature disclosed in this specification including the accompanying claims, abstract and drawings
- a unit claim that lists several devices several of these devices may be replaced by The same hardware item is used to embody this.
- the present disclosure provides a gamma imaging device and an imaging method thereof.
- one aspect of the present disclosure provides a gamma imaging device, which includes a detector including a single crystal bar, the single crystal bar being used to move relative to an imaging field of view to detect incident gamma photons in the imaging field of view, and to collimate the incident gamma photons for gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10:1.
- the detector As the part between the imager and the imaging field of view that realizes gamma photon detection, is the most critical component of the device and can have a significant impact on the detection efficiency of gamma photons.
- Ordinary detectors generally need to use mechanical collimators to collimate photons before entering the detector, so as to achieve differences in the responses of gamma photons in different directions in the detector.
- the traditional collimator design is directly abandoned, and only a single crystal bar 101 is set as a detector between the gamma imaging field of view (FOV) and the imager (not shown), and the differential response to different gamma photons is achieved by moving the single crystal bar relative to the imaging field of view FOV, thereby greatly simplifying the composition structure of the gamma imaging device while ensuring the detection efficiency.
- the number of single crystal bars can be only one.
- the imaging field of view FOV can generally be the detectable range of the detector where the object to be imaged is located, which can be understood as the position of the radiation source.
- the detection efficiency of a single crystal bar 101 that can be used as a detector is related to its solid angle relative to the radiation source (which can be understood as the imaging field of view FOV).
- the imaging solid angle formed when the gamma photon is incident on the front end face 110 of the single crystal bar is the smallest, and the photon detection efficiency is the lowest at this time; when the incident direction of the photon is deflected from being incident on the front end face to the distal end face 120 of the single crystal bar, the photon detection efficiency will be significantly and rapidly improved, thereby being able to bring about a better direction positioning effect.
- the front end face 110 is the end face of the end (i.e., the front end) of the single crystal bar that is closer to the radiation source position
- the distal end face 120 is the end face of the end (i.e., the distal end) of the single crystal bar that is farther from the radiation source position relative to the front end face 110, and the front end and the distal end respectively constitute the two ends of the single crystal bar.
- the detector set for the single crystal bar 101 it is necessary to move the detector set for the single crystal bar 101, and the movement can include at least one of translation along a straight line or curve in space, self-rotation or rotation around a fixed point or moving point in space as the center of a circle.
- a single crystal bar 501 is translated by a unit sampling step ⁇ x (Translation Step) around an imaging field of view FOV with a diameter size D (Diameter of FOV) in a spatial plane, and combined with a unit sampling angle (Rotation Step) to rotate, and the final rotation angle (Projection Angle) is The rotation range of the mobile detection, where satisfy Therefore, by means of the movement of the above-mentioned single crystal bar 101, its position or angle relative to the radiation source (imaging field of view FOV) can be changed, so that the detection of incident photons can produce more diversified and differentiated detection solid angles, thereby significantly improving its detection efficiency and achieving a more accurate directional positioning effect.
- the structure of a single crystal bar 101 is slender, and in the side view of the structure in the length direction (understood as a projection figure at a side view angle), the ratio of the length dimension L of the figure and the maximum width dimension W/G (for example, if W>G, then L:W is determined, otherwise, then L:G is determined) is greater than or equal to 10:1, that is, the length-to-width ratio of the single crystal bar is greater than 10:1.
- the single crystal bar 101 can have a better imaging solid angle, the difference in photon detection efficiency is increased, and a better directional positioning effect is brought about.
- a single crystal bar with this aspect ratio value can provide a device for gamma imaging detection with both high sensitivity and a minimalist structural design when used alone as a detector.
- a new detector mode is established, which can use only a single crystal bar 101 as a detector to collimate and detect incident photons, and completely abandons the existing external mechanical collimator with low detection efficiency, bulky and non-portable. It greatly simplifies the traditional complex detector structure, breaks the traditional limitations of multiple electronic structures, and can also have a minimalist design of high sensitivity.
- the gamma imaging detection device has an extremely simple structural design, is lightweight and portable, and is suitable for various imaging scenarios that require mobile and portable applications.
- the detection efficiency of gamma photons incident normally on the front end of a single crystal bar 301 close to the imaging field of view FOV is lower than the detection efficiency of gamma photons incident obliquely on other parts far away from the imaging field of view FOV; wherein, the distance between the front end face of the single crystal bar close to the imaging field of view and the imaging field of view is less than or equal to 100 mm.
- the crystal response function (Scintillator response function, referred to as SRF, which represents the detection efficiency of gamma photons at different positions of the imaging field of view FOV) of the detector of the embodiment of the present disclosure is significantly different from that of a conventional detector.
- SRF Scintillator response function
- the detection efficiency of the single slender crystal bar 301 is the lowest when it is collimated directly facing the front end face, the SRF is the lowest, while the detection efficiency in other directions is relatively high and can maintain a relatively high and stable level, that is, the detection efficiency of the single crystal bar for gamma photons incident directly on the proximal end face is lower than the detection efficiency of gamma photons obliquely incident on the proximal end face and other surfaces.
- the above-mentioned gamma imaging device of the embodiment of the present disclosure has a good response to almost all incident photon directions except the position directly facing the front end face, and the detection efficiency for particles incident at different angles is not exactly the same, which can be determined by the relative response of the detector at different positions.
- the size of the radiation source activity distribution in different incident directions is judged, thus taking all positions into account instead of limiting the sensitive position to a small angle range of the collimator opening. This makes the relationship between detection efficiency and radiation source position completely opposite to that of conventional designs.
- a minimalist radioactive source counting and positioning device in which the detector is composed of only a thin and long crystal strip. And the detector can move and detect in the 4-pi space, and the position with the lowest count is facing the direction of the radioactive source.
- the detection efficiency of the detector is positively correlated with the solid angle of a single crystal to the position of the radioactive source. As the distance between the crystal and the imaging field of view (FOV) increases, the detection efficiency is seriously lost. Therefore, the detector should be as close to the imaging field of view FOV as possible.
- the gamma imaging device of the disclosed embodiment can have a more flexible sampling scheme when imaging radioactive sources. Specifically, the sampling step size can be adaptively adjusted according to the detector count, and the number of sampling times and sampling time can be reduced without reducing the imaging accuracy.
- the detector further includes a first photoelectric device 402 .
- the first optoelectronic device 402 is coupled to a far end of the single crystal bar 401 away from the imaging field of view, and is used to read out the gamma photon deposition data in the single crystal bar 401 .
- the radiation source imaging device is composed of only a single thin and long crystal bar 401 and a photoelectric device 402.
- the distribution of the radiation source in the imaging field of view FOV can be imaged by translation and rotation sampling.
- the translation can be a translation along a straight line or curve in space
- the rotation can be a self-rotation or rotation around a fixed point or a moving point in space as the center of the circle.
- the detector has a single crystal bar 401 and a photoelectric device 402 arranged at the far end of the single crystal bar 401, wherein the detector can be rotated in a spatial plane with the center of the single crystal bar 401 in the length direction as the center of the circle, so as to realize The detection effect in the range of 0-180° relative to the imaging field of view FOV is shown.
- the first photoelectric device 402 may be a silicon photomultiplier (SiPM), and coupling the photoelectric device 402 to the end face of the single crystal bar 401 far from the imaging field of view FOV can realize single-end readout of photon deposition data.
- SiPM silicon photomultiplier
- the front end face of the single crystal bar 401 close to the imaging field of view FOV can be covered with a thin layer of plastic tooling to achieve mobile protection, so as to achieve the purpose of detection close to the imaging field of view FOV.
- the surface roughness of at least one side surface of a single crystal bar is less than or equal to 0.01 micrometer.
- the single crystal bar of the embodiment of the present disclosure can be a scintillation crystal bar for detection, which can meet the internal transmission requirements of scintillation photons, and the single crystal bar can be a cylinder, a rectangular parallelepiped or other long columnar structure, as long as the aspect ratio of its side view projection is greater than or equal to 10:1.
- the side surface of the column of the single crystal bar can also be processed (such as polishing) to make it have better smoothness, reduce the surface roughness of the side surface of the column, so that the roughness can be less than or equal to 0.01 microns, and specifically, it can be polished with 2000-mesh sandpaper, so that the transmission efficiency of the scintillation photons in the single crystal bar can be further improved by means of the mirror reflection ability of its smooth surface, thereby effectively solving the problem of long transmission distance and serious light loss of scintillation photons in the slender crystal bar, and can significantly improve the photon transmission efficiency, obtain a better detection energy spectrum, thereby improving the detection efficiency and directional positioning accuracy.
- polishing such as polishing
- the transmission matrix of the imaging device needs to be calibrated.
- the specific steps are to divide the imaging field of view FOV into grid points with the pixel size as the step size, place a point source at each grid point, and measure the projection data with a single crystal bar of the detector, and combine the projection data of the point source at each position to obtain the transmission matrix.
- the detector is composed of only a single crystal bar, there is no mechanical collimator and complex mutual occlusion between crystals, and its SRF value has a strong symmetry (as shown in Figure 3), so the calibration steps of the transmission matrix can be greatly simplified.
- the detector further includes a second photoelectric device (not shown).
- the second photoelectric device is coupled to the front end of the single crystal bar close to the imaging field of view, and is used to cooperate with the first photoelectric device to read out the gamma photon deposition data, so as to obtain the energy spectrum in different gamma photon deposition depth directions.
- another second optoelectronic device can be further coupled to the front end of the single crystal bar of the detector, so that the photon deposition data can be read out from the front end, so that the readout data of the first optoelectronic device can be more effectively combined to more accurately calculate the photon position in the single crystal bar of the detector.
- the second optoelectronic device can also be a silicon photomultiplier (SiPM).
- the position of the gamma photon deposition depth direction and other data can be calculated more accurately, so that in the subsequent data processing for imaging, the energy spectrum obtained by statistics at different depths can be segmented and calibrated.
- a single crystal bar of 1 ⁇ 1 ⁇ 20mm3 it can be divided into 10 2mm depth segments, and the statistical photon energy spectrum of each segment is calibrated separately to improve the overall energy resolution, wherein the specific calibration steps include: firstly, flood-field irradiation of the single crystal bar, and then energy calibration of the depth direction position of the photon using the scintillation photon energies Ea and Eb detected by the two optoelectronic devices coupled at its two ends:
- P(z) is the action position in the depth direction
- k and t are fitting coefficients, which can be obtained through experimental calibration fitting.
- the energy of each incident photon event is corrected with the corresponding coefficient according to the depth segment where it falls.
- the problem of poor energy spectrum measurement caused by serious light loss due to the long transmission distance of scintillation photons in the slender crystal strip can be solved through the double-end coupled optoelectronic device, which significantly improves the detection efficiency.
- the detector further includes at least one third photoelectric device.
- At least one third optoelectronic device is coupled to at least one side surface of the single crystal strip.
- the number of coupled optoelectronic devices can be increased on the side surface of the column of the detector of a single crystal strip to achieve side readout, so that The light-emitting surface is significantly enlarged, the transmission light loss of photons in a single crystal strip is reduced, and the double-end readout design of the first photoelectric device and the second photoelectric device can further improve the poor energy spectrum and significantly improve the photon detection efficiency.
- the third photoelectric device can also be a silicon photomultiplier (SiPM).
- a single crystal bar includes a plurality of first crystal blocks and a plurality of second crystal blocks.
- the plurality of second crystal blocks and the plurality of first crystal blocks are arranged alternately to form a crystal strip structure.
- a single crystal bar 601 used as a detector in the embodiment of the present disclosure may be a whole long cylindrical scintillator crystal bar.
- the scintillator crystal bar may be made of a scintillator material having an emission spectrum and an absorption spectrum that at least partially overlap, such as cerium-doped Gadolinium Aluminum Gallium Garnet (GAGG (Ce) or GAGG for short), thereby further increasing the difference in detection response capabilities for incident photons from different directions, and indirectly improving the angular resolution of positioning imaging of gamma photons.
- GGG cerium-doped Gadolinium Aluminum Gallium Garnet
- the single crystal bar can also be a long columnar structure composed of at least two scintillating crystal material blocks with different characteristics.
- the single crystal bar 602 is a crystal bar structure composed of a plurality of first crystal blocks 621 and a plurality of second crystal blocks 622 overlapped and spliced with each other. Among them, there are certain differences in the photon transmission characteristics between the first crystal block 621 and the second crystal block 622.
- the single crystal bar of the long straight column can be directly physically divided into a plurality of detection units, so that it is possible to know in which unit the photon is specifically deposited, and the amount of information that can be used for photon direction estimation is further increased without significantly increasing the complexity of the structure, thereby improving the detection accuracy and detection efficiency.
- the above-mentioned single crystal bars for detection are all required to have a size ratio design with the above-mentioned aspect ratio greater than or equal to 10:1, and by using optoelectronic devices coupled at its far end and/or front end, when gamma photons incident from different directions are deposited on the single slender crystal, obvious response differences will be formed and read out on its coupled end face as the irradiation angles change, thereby significantly improving the directional sensitivity of the detection efficiency.
- the first crystal block and the second crystal block are scintillator materials; or the first crystal block is scintillator material and the second crystal block is optical waveguide material; wherein the scintillator material
- the emission spectrum and absorption spectrum of the material partially overlap, and the refractive index of the optical guide material is greater than or equal to 1.5.
- the first crystal block 621 and the second crystal block 622 can both be scintillator materials, and the first crystal block 621 can be a 200ns GAGG material block, while the second crystal block 622 can be a 90ns GAGG material block. As mentioned above, this can significantly improve the directional sensitivity of the detection efficiency.
- first crystal block 621 and the second crystal block 622 can also be two completely different materials, such as the first crystal block 621 can also be a scintillating crystal, and the second crystal block 622 can also be a light-conducting material, such as K9 optical glass (refractive index 1.51, similar to the refractive index of the coupling agent and SiPM element) or HZF-62 optical glass (refractive index 1.92, close to the refractive index of the GAGG crystal).
- K9 optical glass reffractive index 1.51, similar to the refractive index of the coupling agent and SiPM element
- HZF-62 optical glass reffractive index 1.92, close to the refractive index of the GAGG crystal.
- the first crystal block 621 and the second crystal block 622 are staggered with each other, which can also significantly improve the directional sensitivity of the detection efficiency.
- a single crystal bar may include a column structure with a side view of a quadrilateral, a rhombus, a triangle, a heart shape, or a V shape.
- a single crystal bar 701a-701g as a detector in an embodiment of the present disclosure may be various types of long column structures, such as columns 701a and 701g with side view projection figures of slender rectangles, a rhombus column 701b, a triangular column 701c, a parallelogram column 701d, a heart-shaped column 701e, and a V-shaped column 701f, etc.
- a single crystal bar 701g as shown in FIG7G it can also be composed of an overlapping combination of two materials with different properties, such as the overlap between the aforementioned photoconductive material and the scintillation crystal, so as to further improve its response difference, more accurately realize the detection of photon deposition data, obtain higher detection efficiency, and ensure the accuracy of imaging detection data.
- the detector further includes a refractive layer and/or an absorption layer.
- the refractive layer covers the front end face of the single crystal bar close to the imaging field of view, and the refractive index of the refractive layer is greater than the refractive index of the scintillator material of the single crystal bar, and is used to refract the incident gamma photons to increase the loss of gamma photons on the front end face;
- the absorption layer is covered on the front end face of a single crystal bar close to the imaging field of view, or on the refractive layer, and is used to absorb incident gamma photons and increase the loss of gamma photons on the front end face.
- a high refractive index material can be coated on the front end face close to the imaging field of view FOV (far away from the first optoelectronic device) to form a refractive layer (not shown), wherein the refractive index of the high refractive index material can be greater than or equal to the high refractive index material of a single crystal bar (such as the refractive index of GAGG material is 1.91), and such high refractive index material can be titanium dioxide, Teflon, barium sulfate, etc., so as to increase the loss of scintillation photons generated by gamma photons on the end face, thereby achieving the effect of improving the response difference of photons incident from different directions.
- a visible photon absorbing material can also be coated on the front end face as an absorption layer.
- the visible photon absorbing material can be black tape or other black substances, so as to increase the loss of scintillation photons generated by gamma photons on the end face, thereby achieving the effect of increasing the response difference of incident photons in different directions.
- the first crystal block and the second crystal block of the single crystal bar have different doping ion concentrations and/or dopant materials, and the doping ion concentration is 0.01% to 0.6%.
- a single crystal bar can be a staggered arrangement of scintillation crystal blocks with different dopants or staggered arrangement of scintillation crystal blocks with the same dopant but different doping concentrations.
- the selected crystal dopant can be Ce, Mg, Ti plasma, etc., which can significantly change the luminous efficiency and luminous decay time of the crystal, and its corresponding dopant concentration range is optional from 0.01% to 0.6%, so that the incident light The difference in photon detection efficiency at different depths of the crystal strip increases.
- the dopant materials of the first crystal block and the second crystal block can be different.
- the crystal dopant of the first crystal block can be Ce
- the crystal dopant of the second crystal block can be Mg.
- the staggered arrangement of the two can form the above-mentioned single crystal strip.
- the staggering of scintillation crystals with different dopants or the staggering of scintillation crystals with the same dopant but different doping concentrations can be formed in the length direction, thereby significantly increasing the photon detection efficiency at different depths, and facilitating the realization of the above-mentioned corresponding effects such as segmented calibration and transmission matrix calibration.
- the first crystal block and the second crystal block can be the same dopant material with different single doping ion concentrations, for example, the crystal dopant of the first crystal block and the second crystal block can both be Ce, and the doping ion concentration of Ce in the first crystal block can be 0.01%, and the doping ion concentration of Ce in the second crystal block can be 0.26%, and the staggered arrangement of the two can constitute the above-mentioned single crystal bar.
- a single crystal strip can be staggered along its length with different crystal dopants or with the same dopant but at different doping concentrations.
- the detector further includes a blocking layer.
- the blocking layer is coupled to the end face of the single crystal bar near the front end of the imaging field of view to block the gamma photons incident normally toward the end face of the front end.
- a thin layer of high-density material can be covered on the front end face of a single crystal bar near the imaging field of view FOV as a blocking layer, which can significantly block the normally incident gamma photons and reduce the detection efficiency of normally incident gamma photons, thereby increasing the directional response difference.
- the high-density material can be at least one of heavy metal materials with strong photon blocking ability such as tungsten and lead.
- the single crystal strip shown in Figures 1 to 7G above enables the corresponding gamma imaging device to collimate photons using the shape characteristics and properties of the single slender crystal itself, without the need for an external metal collimator or other crystal detector units.
- the positioning and imaging of the radiation source can be achieved with only a slender scintillation crystal and a coupled optoelectronic device.
- the design of the system detector structure is greatly simplified, the number of electronic readout channels is reduced, the weight and volume of the equipment are reduced, and portable imaging can be achieved at a low cost.
- the The detection efficiency of the device itself is improved, and the radiation source positioning device composed of a single slender crystal can realize the dual functions of counting and positioning, with simple composition and convenient positioning.
- a gamma imaging device for a radiation source plane in which the front end face of a single crystal bar 901 serving as a detector faces the imaging field of view FOV plane, and two-dimensional dot matrix translation sampling is performed on a plane A corresponding to the imaging field of view FOV in a direction parallel to the imaging field of view FOV.
- Plane A may have a two-dimensional dot matrix composed of multiple sampling points A1, and a radiation source distribution map of the imaging field of view FOV plane may be reconstructed.
- a gamma imaging device which includes a crystal bar array consisting of at least one single crystal bar and a first circuit board.
- a crystal bar array composed of at least one single crystal bar is used to move relative to an imaging field of view to detect incident gamma photons in the imaging field of view, and to collimate the incident gamma photons to achieve gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10:1;
- the first circuit board is coupled to the far end of the crystal bar array away from the imaging field of view, and is used to output detection data of the crystal bar array to the imaging field of view.
- a plurality of single crystal bars can be combined in space along the plane where the front end face of each single crystal bar is located close to the imaging field of view FOV (the size meets 200 ⁇ 200 ⁇ 200 mm 3 ) to form crystal bar arrays 801 and 802.
- FOV imaging field of view
- a layer of circuit board 803 and 804 are coupled to the distal end faces of the crystal bar arrays 801 and 802 as single-layer detectors, they are respectively used as the first circuit board.
- the first circuit boards 803 and 804 can be arranged with a plurality of the first optoelectronic devices coupled to the distal end faces of the crystal bar arrays 801 and 802, so as to achieve high integration and simple structure gamma imaging with only a single-layer detector + circuit board.
- the gamma imaging device further includes a second circuit board, which is coupled to the front end of the crystal bar array away from the imaging field of view, and is used to cooperate with the first circuit board to output detection data of the crystal bar array on the imaging field of view.
- a layer of electric current is coupled to each of the distal end faces of the crystal bar arrays 801 and 802.
- a layer of circuit boards 805 and 806 are coupled to the front end faces of the crystal bar arrays 801 and 802, respectively, as the second circuit board.
- the second circuit boards 803 and 804 can be arranged with a plurality of the second optoelectronic devices coupled to the front end faces of the crystal bar arrays 801 and 802. Therefore, with the cooperation of the second circuit board, the design of a gamma imaging device with a single-layer detector + front and rear two-layer circuit boards can be realized, so as to further improve its imaging accuracy without significantly increasing the structural complexity.
- the crystal bar arrays 801 and 802 shown in Figures 8A and 8B can be composed of a single thin scintillation crystal to form a detector module. Multiple thin single crystals are arranged at intervals to form the detector array, and sampling at different angles is obtained through translation and rotation detection, so as to obtain better gamma images.
- the gamma imaging device further includes a scintillation crystal layer, which is located between the first circuit board and the distal end surface of the crystal bar array to receive the remaining scintillation photons passing through the crystal bar array.
- a complete scintillation crystal layer 807 can be coupled at the far end of the crystal module.
- the scintillation crystal layer 807 can be located between the first circuit board 803 and the source end face of the crystal bar array 801 to receive the remaining penetrating photons, thereby forming a "comb-tooth-type" detector array, thereby further improving the imaging quality.
- the single crystal bar unit in the above-mentioned crystal bar arrays 801 and 802 can be the single crystal bar shown in the above-mentioned Figures 1-7G, so that the corresponding gamma imaging device can utilize the shape characteristics and properties of the single slender crystal itself to achieve collimation of photons, without the need for an additional metal collimator or the use of other crystal detector units. It can only be composed of a series of slender scintillation crystals arranged with each other to form an array, so as to further realize the positioning and imaging of the radiation source during the mobile detection process of the array, which greatly simplifies the design of the system, reduces the weight and volume of the equipment, and can achieve portable imaging with low cost.
- the above-mentioned gamma imaging device of the embodiment of the present disclosure can be designed as a brain SPECT imaging device, which uses multiple crystal array detector modules to form a single-layer detector to form a helmet that surrounds the human brain. It is light, flexible and wearable, and has extremely high commercial value and scientific research value.
- Another aspect of the present disclosure provides an imaging device applied to the above-mentioned gamma imaging device. method.
- the gamma imaging device of the embodiment of the present disclosure may be composed of only one slender strip scintillation crystal and one optoelectronic device.
- the distribution of the radiation source within the imaging field of view FOV is imaged by translational and rotational sampling.
- an adaptive sampling algorithm is designed to reduce the sampling step length ⁇ x at low counts and increase the sampling step length ⁇ x at high counts, thereby minimizing the number of sampling times and reducing the sampling time while ensuring the imaging accuracy.
- the SRF of the detector composed of a single crystal strip is in a downward-thrusting shape (as shown in FIG3 ).
- Siddon algorithm when Siddon algorithm is used for filtering and back-projection analytical reconstruction, the bright areas of the reconstructed image represent low activity of the radiation source, and the dark areas represent high activity of the radiation source.
- the image needs to be transformed in value to obtain a forward image representing the distribution of the radiation source:
- y′ i represents the forward distribution map obtained after transformation
- max ⁇ y ⁇ represents the maximum value in the original reverse map
- max ⁇ y ⁇ represents the minimum value in the original reverse map.
- a single crystal detector prototype device was built as an actual prototype to test its imaging performance.
- a single GAGG (Ce) scintillating crystal strip of 1 ⁇ 1 ⁇ 20 mm 3 was selected as the detector, two SiPM elements were coupled at both ends, and a translation and rotation platform was used to realize the scanning trajectory and the imaging of simulated point sources at different positions.
- the reconstruction results show the reconstructed image effects of single point sources, two point sources and four point sources with a spacing of 6 mm.
- the average detection efficiency can reach 1.8 ⁇ 10 -5 , and two point sources 6 mm apart can be clearly distinguished, and the distribution of multiple point sources also shows excellent resolution.
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Abstract
A gamma imaging device and an imaging method. The gamma imaging device comprises a detector; the detector comprises a single crystal strip (101); the single crystal strip (101) is used for moving relative to an imaging field of view to detect incident gamma photons of the imaging field of view, and realize collimation of the incident gamma photons, so as to realize gamma imaging, wherein the aspect ratio of the single crystal strip is greater than 10:1. A front end face (110) is an end face of the end of the single crystal strip (101) close to a radioactive source, a distal end face (120) is an end face of the end of the single crystal strip (101) farther away from the radioactive source than the front end face (110), and a front end and a distal end respectively form the two ends of the single crystal strip (101).
Description
本公开涉及辐射成像技术领域,尤其涉及一种伽马成像装置及其成像方法。The present disclosure relates to the field of radiation imaging technology, and in particular to a gamma imaging device and an imaging method thereof.
伽马成像需要探测器单元对来自不同方向的光子有明显的响应差异性,即当光子入射方向变化时,在某一探测器单元内的光子计数(探测效率)也有较大的变化。其中,传统上通常采用机械准直器来实现不同方向的响应差异,但由于机械准直器阻挡了很大一部分光子进入探测器,会导致整体探测效率严重下降,且机械准直器体积和重量大,使整体探测器笨重不轻便,使用场景也较为受限;而现有采用多层探测器单元前后遮挡“自准直”的方式会造成响应差异性,虽避免了效率下降,但是探测器结构复杂,电子学读出通道数多,往往导致成像装置体积较大或成本较高。Gamma imaging requires that the detector unit has obvious response differences to photons from different directions, that is, when the incident direction of the photons changes, the photon count (detection efficiency) in a certain detector unit also changes greatly. Among them, mechanical collimators are usually used traditionally to achieve response differences in different directions, but because the mechanical collimator blocks a large part of the photons from entering the detector, the overall detection efficiency will be seriously reduced, and the mechanical collimator is large in size and weight, making the overall detector bulky and not light, and the use scenario is also relatively limited; the existing method of using multi-layer detector units to block the front and back "self-collimation" will cause response differences. Although it avoids the decline in efficiency, the detector structure is complex and the number of electronic readout channels is large, which often leads to a large imaging device or high cost.
发明内容Summary of the invention
为解决现有伽马成像技术中确保光子明显响应差异性所存在的上述技术问题至少之一,本公开提供了一种伽马成像装置及其成像方法。In order to solve at least one of the above-mentioned technical problems existing in the existing gamma imaging technology of ensuring obvious photon response differences, the present disclosure provides a gamma imaging device and an imaging method thereof.
本公开的一个方面提供了一种伽马成像装置,其中,包括探测器,该探测器包括单根晶体条,单根晶体条用于相对于成像视野的移动以探测成像视野的入射伽马光子,实现对入射伽马光子的准直,以用于实现伽马成像,其中,单根晶体条的长宽比大于10∶1。One aspect of the present disclosure provides a gamma imaging device, which includes a detector, the detector including a single crystal bar, the single crystal bar is used to move relative to the imaging field of view to detect incident gamma photons in the imaging field of view, and to collimate the incident gamma photons for gamma imaging, wherein the length-to-width ratio of the single crystal bar is greater than 10:1.
优选地,单根晶体条靠近成像视野的前端正入射的伽马光子的探测效率小于远离成像视野的其他部分斜入射的伽马光子的探测效率;其中,
单根晶体条靠近成像视野的前端端面与成像视野之间的间距小于等于100mm。Preferably, the detection efficiency of gamma photons incident normally on the front end of a single crystal bar close to the imaging field of view is lower than the detection efficiency of gamma photons incident obliquely on other parts far from the imaging field of view; wherein, The distance between the front end face of a single crystal bar close to the imaging field of view and the imaging field of view is less than or equal to 100 mm.
优选地,探测器还包括第一光电器件。第一光电器件耦合在单根晶体条的远离成像视野的远端,用于读出单根晶体条中的伽马光子沉积数据。Preferably, the detector further comprises a first photoelectric device. The first photoelectric device is coupled to a far end of the single crystal bar away from the imaging field of view and is used to read out the gamma photon deposition data in the single crystal bar.
优选地,单根晶体条的至少一侧表面的表面粗糙度小于等于0.01微米。Preferably, the surface roughness of at least one side surface of a single crystal bar is less than or equal to 0.01 micrometer.
优选地,探测器还包括第二光电器件。第二光电器件耦合在单根晶体条的靠近成像视野的前端,用于配合第一光电器件,读出伽马光子沉积数据,用于获取不同伽马光子沉积深度方向上的能谱。Preferably, the detector further comprises a second photoelectric device, which is coupled to the front end of the single crystal bar near the imaging field of view and is used to cooperate with the first photoelectric device to read out the gamma photon deposition data and obtain the energy spectrum in different gamma photon deposition depth directions.
根据本公开的实施例,探测器还包括至少一个第三光电器件。至少一个第三光电器件耦合在单根晶体条的至少一侧表面上。According to an embodiment of the present disclosure, the detector further comprises at least one third optoelectronic device. The at least one third optoelectronic device is coupled to at least one side surface of the single crystal bar.
优选地,所单根晶体条包括多个第一晶体块和多个第二晶体块。多个第二晶体块与多个第一晶体块彼此交错排列构成一晶体条结构。Preferably, the single crystal bar comprises a plurality of first crystal blocks and a plurality of second crystal blocks. The plurality of second crystal blocks and the plurality of first crystal blocks are arranged alternately to form a crystal bar structure.
优选地,第一晶体块和第二晶体块为闪烁体材料;或者第一晶体块为闪烁体材料,第二晶体块为光导材料;其中,闪烁体材料的发射光谱和吸收光谱部分重叠,光导材料的折射率大于等于1.5。Preferably, the first crystal block and the second crystal block are scintillator materials; or the first crystal block is scintillator material and the second crystal block is photoconductive material; wherein the emission spectrum and absorption spectrum of the scintillator material partially overlap, and the refractive index of the photoconductive material is greater than or equal to 1.5.
优选地,单根晶体条可以包括侧视图为四边形、菱形、三角形、心形、V形的柱体结构。Preferably, a single crystal bar may include a columnar structure having a quadrilateral, rhombus, triangle, heart or V shape in a side view.
优选地,探测器还包括折射层和/或吸收层。折射层覆盖在单根晶体条靠近成像视野的前端端面上,折射层的折射率大于单根晶体条的闪烁体材料的折射率,用于对入射伽马光子产生的闪烁光子进行折射,增大闪烁光子在前端端面上的损失;吸收层覆盖在单根晶体条靠近成像视野的前端端面上,或者覆盖在折射层上,用于对入射伽马光子产生的闪烁光子进行吸收,增大闪烁光子在前端端面上的损失。Preferably, the detector further comprises a refractive layer and/or an absorption layer. The refractive layer is covered on the front end face of the single crystal bar close to the imaging field of view, and the refractive index of the refractive layer is greater than the refractive index of the scintillator material of the single crystal bar, and is used to refract the scintillation photons generated by the incident gamma photons, thereby increasing the loss of the scintillation photons on the front end face; the absorption layer is covered on the front end face of the single crystal bar close to the imaging field of view, or is covered on the refractive layer, and is used to absorb the scintillation photons generated by the incident gamma photons, thereby increasing the loss of the scintillation photons on the front end face.
优选地,单根晶体条的第一晶体块和第二晶体块的掺杂离子浓度和/或掺杂剂材料不同,掺杂离子浓度为0.01%~0.6%。Preferably, the first crystal block and the second crystal block of a single crystal bar have different doping ion concentrations and/or dopant materials, and the doping ion concentration is 0.01% to 0.6%.
优选地,探测器还包括阻挡层。阻挡层耦合在单根晶体条靠近成像视野的前端端面上,以阻挡朝向前端端面正入射的伽马光子。
Preferably, the detector further comprises a blocking layer, which is coupled to the front end face of the single crystal bar close to the imaging field of view to block gamma photons incident normally toward the front end face.
本公开的另一方面提供了一种伽马成像装置,其中,包括至少一个单根晶体条构成的晶体条阵列和第一电路板。至少一个单根晶体条构成的晶体条阵列用于相对于成像视野的移动以探测成像视野的入射伽马光子,实现对入射伽马光子的准直,以用于实现伽马成像,其中,单根晶体条的长宽比大于10∶1;第一电路板与晶体条阵列远离成像视野的远端相耦合,用于输出晶体条阵列对成像视野的探测数据。Another aspect of the present disclosure provides a gamma imaging device, which includes a crystal bar array composed of at least one single crystal bar and a first circuit board. The crystal bar array composed of at least one single crystal bar is used to move relative to the imaging field of view to detect incident gamma photons in the imaging field of view, and to collimate the incident gamma photons to achieve gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10:1; the first circuit board is coupled to the far end of the crystal bar array away from the imaging field of view, and is used to output detection data of the crystal bar array on the imaging field of view.
优选地,伽马成像装置还包括第二电路板,第二电路板与晶体条阵列远离成像视野的前端相耦合,用于配合第一电路板,输出晶体条阵列对成像视野的探测数据。Preferably, the gamma imaging device further comprises a second circuit board, which is coupled to the front end of the crystal bar array away from the imaging field of view and is used to cooperate with the first circuit board to output detection data of the crystal bar array on the imaging field of view.
优选地,伽马成像装置还包括闪烁晶体层,闪烁晶体层位于所述第一电路板和所述晶体条阵列的远端端面之间,以接收通过所述晶体条阵列的剩余闪烁光子。Preferably, the gamma imaging device further comprises a scintillation crystal layer, which is located between the first circuit board and the distal end surface of the crystal bar array to receive the remaining scintillation photons passing through the crystal bar array.
本公开的又一方面提供了一种上述的伽马成像装置的成像方法。Another aspect of the present disclosure provides an imaging method of the above-mentioned gamma imaging device.
本公开提供了一种伽马成像装置及其成像方法,其中,该伽马成像装置包括探测器,该探测器包括单根晶体条,单根晶体条用于相对于成像视野的移动以探测成像视野的入射伽马光子,实现对入射伽马光子的准直,以用于实现伽马成像,其中,单根晶体条的长宽比大于10∶1。因此,基于上述伽马成像装置,建立了一种全新的探测器模式,完全摒弃了现有探测效率低且笨重庞大的外部机械准直器,极大程度上简化了传统的复杂探测器结构和多个电子学结构的限制,且可以同时兼具高灵敏度的极简设计的伽马成像探测装置。The present disclosure provides a gamma imaging device and an imaging method thereof, wherein the gamma imaging device includes a detector, the detector includes a single crystal bar, the single crystal bar is used to move relative to the imaging field of view to detect incident gamma photons in the imaging field of view, realize collimation of the incident gamma photons, and realize gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10: 1. Therefore, based on the above-mentioned gamma imaging device, a new detector mode is established, which completely abandons the existing low-efficiency and bulky external mechanical collimator, greatly simplifies the limitations of the traditional complex detector structure and multiple electronic structures, and can also have a highly sensitive minimalist gamma imaging detection device.
图1示意性示出了根据本公开实施例的伽马成像装置的作为探测器的单根晶体条101和成像视野FOV的组成图;FIG1 schematically shows a composition diagram of a single crystal bar 101 as a detector and an imaging field of view FOV of a gamma imaging device according to an embodiment of the present disclosure;
图2示意性示出了现有伽马成像装置的传统机械准直器201和探测器202相对放射源位置的成像探测原理图及其对应SRF曲线图;
FIG2 schematically shows an imaging detection principle diagram of a conventional mechanical collimator 201 and a detector 202 of an existing gamma imaging device relative to the radiation source position and a corresponding SRF curve diagram;
图3示意性示出了根据本公开实施例的伽马成像装置的作为探测器的单根晶体条301相对放射源位置的成像探测原理图及其对应SRF曲线图;FIG3 schematically shows an imaging detection principle diagram of a single crystal bar 301 as a detector relative to a radiation source position of a gamma imaging device according to an embodiment of the present disclosure and a corresponding SRF curve diagram;
图4示意性示出了根据本公开实施例的单根晶体条401的旋转探测图;FIG4 schematically shows a rotation detection diagram of a single crystal bar 401 according to an embodiment of the present disclosure;
图5示意性示出了根据本公开实施例的单根晶体条501作为探测器相对成像视野FOV的移动探测原理俯视图;FIG5 schematically shows a top view of a single crystal bar 501 as a detector for movement detection relative to an imaging field of view FOV according to an embodiment of the present disclosure;
图6A示意性示出了根据本公开实施例的单根晶体条601的结构立体图;FIG6A schematically shows a structural perspective view of a single crystal bar 601 according to an embodiment of the present disclosure;
图6B示意性示出了根据本公开实施例的单根晶体条602的结构立体图;FIG6B schematically shows a perspective view of the structure of a single crystal bar 602 according to an embodiment of the present disclosure;
图7A-图7G示意性示出了根据本公开实施例的单根晶体条701a-701g的结构侧视图;7A-7G schematically show side views of the structures of single crystal bars 701a-701g according to an embodiment of the present disclosure;
图8A示意性示出了根据本公开另一实施例的伽马成像装置的晶体条阵列801相对成像视野FOV的成像组成图;FIG8A schematically shows an imaging composition diagram of a crystal bar array 801 of a gamma imaging device relative to an imaging field of view FOV according to another embodiment of the present disclosure;
图8B示意性示出了根据本公开另一实施例的伽马成像装置的晶体条阵列802相对成像视野FOV的成像组成图;FIG8B schematically shows an imaging composition diagram of a crystal bar array 802 of a gamma imaging device relative to an imaging field of view FOV according to another embodiment of the present disclosure;
图9示意性示出了根据本公开实施例的伽马成像方法中单根晶体条901沿平行于FOV的方向进行二维点阵平移采样的原理图;FIG9 schematically shows a principle diagram of performing two-dimensional lattice translation sampling of a single crystal bar 901 along a direction parallel to the FOV in a gamma imaging method according to an embodiment of the present disclosure;
图10A示出了根据本公开实施例的伽马成像装置的成像视野FOV满足40mm直径且探测器与FOV距离满足45mm的热圆柱重建图像;FIG10A shows a thermal cylindrical reconstructed image in which the imaging field of view FOV of a gamma imaging device according to an embodiment of the present disclosure meets a diameter of 40 mm and the distance between the detector and the FOV meets a diameter of 45 mm;
图10B示出了根据本公开实施例的伽马成像装置的成像视野FOV满足100mm直径且探测器与FOV距离满足45mm的热圆柱重建图像;FIG10B shows a thermal cylindrical reconstructed image in which the imaging field of view FOV of the gamma imaging device according to an embodiment of the present disclosure satisfies a diameter of 100 mm and the distance between the detector and the FOV satisfies a distance of 45 mm;
图11示出了根据本公开实施例的伽马成像装置的实际样机装置对6mm间距的单点源、两点源和四点源的重建图像效果图。FIG. 11 shows a diagram of the reconstructed image effect of a single point source, two point sources, and four point sources with a spacing of 6 mm according to an actual prototype device of a gamma imaging device according to an embodiment of the present disclosure.
为使本公开的目的、技术方案和优点更加清楚明白,以下结合具体
实施例,并参照附图,对本公开进一步详细说明。In order to make the purpose, technical solutions and advantages of the present disclosure more clear, the following is a detailed description of the present invention. The present disclosure will be further described in detail with reference to the accompanying drawings and embodiments.
需要说明的是,在附图或说明书正文中,未绘示或描述的实现方式,均为所属技术领域中普通技术人员所知的形式,并未进行详细说明。此外,上述对各元件和方法的定义并不仅限于实施例中提到的各种具体结构、形状或方式,本领域普通技术人员可对其进行简单地更改或替换。It should be noted that the implementation methods not shown or described in the drawings or the text of the specification are all forms known to ordinary technicians in the relevant technical field and are not described in detail. In addition, the above definitions of various elements and methods are not limited to the various specific structures, shapes or methods mentioned in the embodiments, and ordinary technicians in the field can simply change or replace them.
还需要说明的是,实施例中提到的方向用语,例如“上”、“下”、“前”、“后”、“左”、“右”等,仅是参考附图的方向,并非用来限制本公开的保护范围。贯穿附图,相同的元素由相同或相近的附图标记来表示。在可能导致对本公开的理解造成混淆时,将省略常规结构或构造。It should also be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "back", "left", "right", etc., are only reference directions of the drawings and are not intended to limit the scope of protection of the present disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or configurations will be omitted when they may cause confusion in the understanding of the present disclosure.
并且图中各部件的形状和尺寸不反映真实大小和比例,而仅示意本公开实施例的内容。另外,在权利要求中,不应将位于括号之间的任何参考符号构造成对权利要求的限制。Moreover, the shapes and sizes of the components in the figures do not reflect the real size and proportion, but only illustrate the contents of the embodiments of the present disclosure. In addition, in the claims, any reference symbols between brackets shall not be constructed as limiting the claims.
再者,单词“包含”不排除存在未列在权利要求中的元件或步骤。位于元件之前的单词“一”或“一个”不排除存在多个这样的元件。Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
说明书与权利要求中所使用的序数例如“第一”、“第二”、“第三”等的用词,以修饰相应的元件,其本身并不意味着该元件有任何的序数,也不代表某一元件与另一元件的顺序或是制造方法上的顺序,这些序数的使用仅用来使具有某命名的一元件得以和另一具有相同命名的元件能做出清楚区分。The ordinal numbers used in the specification and claims, such as "first", "second", "third", etc., to modify the corresponding elements, do not themselves mean that the elements have any ordinal numbers, nor do they represent the order of one element and another element or the order of manufacturing methods. The use of these ordinal numbers is only used to clearly distinguish a component with a certain name from another component with the same name.
本领域那些技术人员可以理解,可以对实施例中的设备中的模块进行自适应性地改变并且把他们设置在与该实施例不同的一个或多个设备中。可以把实施例中的模块或单元或组件组合成一个模块或单元或组件,以及此外可以把他们分成多个子模块或子单元或子组件。除了这样的特征和/或过程或者单元中的至少一些是相互排斥之外,可以采用任何组合对本说明书(包括伴随的权利要求、摘要和附图)中公开的所有特征以及如此公开的任何方法或者设备的所有过程或单元进行组合。除非另外明确陈述,本说明书(包括伴随的权利要求、摘要和附图)中公开的每个特征可以由提供相同、等同或相似目的的代替特征来代替。并且,在列举了若干装置的单元权利要求中,这些装置中的若干个可以是通过
同一个硬件项来具体体现。Those skilled in the art will appreciate that the modules in the devices in the embodiments may be adaptively changed and placed in one or more devices different from the embodiments. The modules or units or components in the embodiments may be combined into one module or unit or component, and further they may be divided into a plurality of sub-modules or sub-units or sub-components. All features disclosed in this specification (including the accompanying claims, abstract and drawings) and all processes or units of any method or device so disclosed may be combined in any combination, except that at least some of such features and/or processes or units are mutually exclusive. Unless expressly stated otherwise, each feature disclosed in this specification (including the accompanying claims, abstract and drawings) may be replaced by an alternative feature that provides the same, equivalent or similar purpose. Furthermore, in a unit claim that lists several devices, several of these devices may be replaced by The same hardware item is used to embody this.
类似地,应当理解,为了精简本公开并帮助理解各个公开方面的一个或多个,在上面对本公开的示例性实施例的描述中,本公开的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而,并不应将该公开的方法解释成反映如下意图:即所要求保护的本公开要求比在每个权利要求中所明确记载的特征更多的特征。更确切地说,如下面的权利要求书所反映的那样,公开方面在于少于前面公开的单个实施例的所有特征。因此,遵循具体实施方式的权利要求书由此明确地并入该具体实施方式,其中每个权利要求本身都作为本公开的单独实施例。Similarly, it should be understood that in order to streamline the present disclosure and aid in understanding one or more of the various disclosed aspects, in the above description of the exemplary embodiments of the present disclosure, the various features of the present disclosure are sometimes grouped together into a single embodiment, figure, or description thereof. However, this disclosed method should not be interpreted as reflecting the following intention: the claimed disclosure requires more features than the features explicitly recited in each claim. More specifically, as reflected in the claims below, the disclosed aspects lie in less than all the features of the single embodiment disclosed above. Therefore, the claims that follow the specific embodiment are hereby expressly incorporated into the specific embodiment, with each claim itself serving as a separate embodiment of the present disclosure.
为解决现有伽马成像技术中确保光子明显响应差异性所存在的上述技术问题至少之一,本公开提供了一种伽马成像装置及其成像方法。In order to solve at least one of the above-mentioned technical problems existing in the existing gamma imaging technology of ensuring obvious photon response differences, the present disclosure provides a gamma imaging device and an imaging method thereof.
如图1所示,本公开的一个方面提供了一种伽马成像装置,其中,包括探测器,该探测器包括单根晶体条,单根晶体条用于相对于成像视野的移动以探测成像视野的入射伽马光子,实现对入射伽马光子的准直,以用于实现伽马成像,其中,单根晶体条的长宽比大于10∶1。As shown in FIG1 , one aspect of the present disclosure provides a gamma imaging device, which includes a detector including a single crystal bar, the single crystal bar being used to move relative to an imaging field of view to detect incident gamma photons in the imaging field of view, and to collimate the incident gamma photons for gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10:1.
对于伽马成像装置而言,探测器作为成像器和成像视野之间实现伽马光子探测的部分,属于该装置中最为关键的组成内容,能够对伽马光子的探测效率产生明显影响。For gamma imaging devices, the detector, as the part between the imager and the imaging field of view that realizes gamma photon detection, is the most critical component of the device and can have a significant impact on the detection efficiency of gamma photons.
普通的探测器一般需要采用机械准直器对进入探测器之前的光子进行准直,实现不同方向上伽马光子在探测器的响应差异。在本公开实施例的伽马成像装置中,则直接摒弃了传统的准直器设计,仅在伽马成像视野(Field of View,简称FOV)和成像器(未示出)之间设置单根晶体条101作为探测器,利用对该单根晶体条相对于成像视野FOV的移动实现对不同伽马光子的差异性响应,从而在保证探测效率的情况下,极大地简化了伽马成像装置的组成结构。其中,单根晶体条的数量可以只有一根。其中,成像视野FOV一般可以为待成像物所处的探测器可探测范围,可以理解为放射源的位置。Ordinary detectors generally need to use mechanical collimators to collimate photons before entering the detector, so as to achieve differences in the responses of gamma photons in different directions in the detector. In the gamma imaging device of the present embodiment, the traditional collimator design is directly abandoned, and only a single crystal bar 101 is set as a detector between the gamma imaging field of view (FOV) and the imager (not shown), and the differential response to different gamma photons is achieved by moving the single crystal bar relative to the imaging field of view FOV, thereby greatly simplifying the composition structure of the gamma imaging device while ensuring the detection efficiency. Among them, the number of single crystal bars can be only one. Among them, the imaging field of view FOV can generally be the detectable range of the detector where the object to be imaged is located, which can be understood as the position of the radiation source.
在本公开实施例中,可以作为探测器的单根晶体条101的探测效率与它相对放射源(可以理解为成像视野FOV)位置的立体角有关。相对
于对伽马光子入射方向变化不够敏感的常规的方形的探测器单元,本公开实施例的单根晶体条101在显著增大其长宽比后,伽马光子正入射于该单根晶体条的前端端面110时所构成的成像立体角最小,此时光子探测效率最低;当光子的入射方向由正入射于该前端端面向该单根晶体条的远端端面120偏转时,光子探测效率会有一个比较明显和快速的提升,从而能够带来比较好的方向定位效果。其中,在同一时刻下,前端端面110为该单根晶体条距离放射源位置较近的一端(即前端)的端面,远端端面120相对于前端端面110为该单根晶体条距离放射源位置较远的一端(即远端)的端面,前端和远端分别构成该单根晶体条的两端。In the embodiment of the present disclosure, the detection efficiency of a single crystal bar 101 that can be used as a detector is related to its solid angle relative to the radiation source (which can be understood as the imaging field of view FOV). Compared with conventional square detector units that are not sensitive enough to changes in the incident direction of gamma photons, after significantly increasing the aspect ratio of the single crystal bar 101 of the disclosed embodiment, the imaging solid angle formed when the gamma photon is incident on the front end face 110 of the single crystal bar is the smallest, and the photon detection efficiency is the lowest at this time; when the incident direction of the photon is deflected from being incident on the front end face to the distal end face 120 of the single crystal bar, the photon detection efficiency will be significantly and rapidly improved, thereby being able to bring about a better direction positioning effect. Among them, at the same time, the front end face 110 is the end face of the end (i.e., the front end) of the single crystal bar that is closer to the radiation source position, and the distal end face 120 is the end face of the end (i.e., the distal end) of the single crystal bar that is farther from the radiation source position relative to the front end face 110, and the front end and the distal end respectively constitute the two ends of the single crystal bar.
因此,为确保该单根晶体条能够在探测过程中更具有更为稳定的探测效果,同时兼顾较高的探测效率,在具体的探测过程中,需要对该单根晶体条101设置的探测器进行移动,该移动可以是包括沿空间直线或曲线方向的平移、在空间中以某个固定点或移动点作为圆心的自转动或者围绕转动中的至少之一种。如图5所示,对单根晶体条501在一空间平面内,围绕直径尺寸为D(Diameter of FOV)的成像视野FOV进行单位采样步长Δx(Translation Step)平移,并且结合单位采样角度(Rotation Step)进行旋转,最终完成旋转角度(Projection Angle)为的旋转范围的移动探测,其中满足因此,借助于上述单根晶体条101的移动,可以改变其相对于放射源(成像视野FOV)的位置或者角度,从而能够给入射光子的探测,产生更为多样化、差异化的探测立体角,借以显著提高其探测效率,具有更为精准的方向定位效果。Therefore, in order to ensure that the single crystal bar can have a more stable detection effect during the detection process, while taking into account a higher detection efficiency, in the specific detection process, it is necessary to move the detector set for the single crystal bar 101, and the movement can include at least one of translation along a straight line or curve in space, self-rotation or rotation around a fixed point or moving point in space as the center of a circle. As shown in FIG5 , a single crystal bar 501 is translated by a unit sampling step Δx (Translation Step) around an imaging field of view FOV with a diameter size D (Diameter of FOV) in a spatial plane, and combined with a unit sampling angle (Rotation Step) to rotate, and the final rotation angle (Projection Angle) is The rotation range of the mobile detection, where satisfy Therefore, by means of the movement of the above-mentioned single crystal bar 101, its position or angle relative to the radiation source (imaging field of view FOV) can be changed, so that the detection of incident photons can produce more diversified and differentiated detection solid angles, thereby significantly improving its detection efficiency and achieving a more accurate directional positioning effect.
进一步地,在本公开实施例中,单根晶体条101的结构细长,且其在长度方向上的结构侧视图形(理解为侧视角度的投影图形)中,该图形长度的尺寸L和最大的宽度尺寸W/G(比如,W>G,则确定L∶W,反之,则确定L∶G)的比值要大于等于10∶1,即单根晶体条的长宽比大于10∶1。借此,能够保证在该单根晶体条101后续移动探测过程中,该单根晶体条101能够具有更好的成像立体角,光子探测效率差异性增大,带来更好的方向定位效果。换言之,单根晶体条的长宽比越大,晶体对
正入射和斜入射的伽马光子的探测效率差别越大,对伽马光子的入射方向更敏感,从而带来更好的方向定位效果。因此,可以使得以该长宽比数值的单根晶体条在单独作为探测器时,可提供同时兼具高灵敏度和极简结构设计的用于伽马成像探测的装置。Furthermore, in the disclosed embodiment, the structure of a single crystal bar 101 is slender, and in the side view of the structure in the length direction (understood as a projection figure at a side view angle), the ratio of the length dimension L of the figure and the maximum width dimension W/G (for example, if W>G, then L:W is determined, otherwise, then L:G is determined) is greater than or equal to 10:1, that is, the length-to-width ratio of the single crystal bar is greater than 10:1. Thereby, it can be ensured that during the subsequent movement detection process of the single crystal bar 101, the single crystal bar 101 can have a better imaging solid angle, the difference in photon detection efficiency is increased, and a better directional positioning effect is brought about. In other words, the larger the length-to-width ratio of the single crystal bar, the better the crystal is at detecting the direction. The greater the difference in detection efficiency between normal incident and oblique incident gamma photons, the more sensitive the incident direction of the gamma photons is, thus bringing about a better directional positioning effect. Therefore, a single crystal bar with this aspect ratio value can provide a device for gamma imaging detection with both high sensitivity and a minimalist structural design when used alone as a detector.
因此,基于上述伽马成像装置,建立了一种全新的探测器模式,可以仅采用单根晶体条101作为探测器对入射光子进行准直探测,而完全摒弃了现有探测效率低且笨重庞大不便携的外部机械准直器,极大程度上简化了传统的复杂探测器结构,破除多个电子学结构的传统限制,且可以同时兼具高灵敏度的极简设计的伽马成像探测装置,结构设计极为简单,轻量便携,适合需要移动式便携应用的各类成像场景。Therefore, based on the above-mentioned gamma imaging device, a new detector mode is established, which can use only a single crystal bar 101 as a detector to collimate and detect incident photons, and completely abandons the existing external mechanical collimator with low detection efficiency, bulky and non-portable. It greatly simplifies the traditional complex detector structure, breaks the traditional limitations of multiple electronic structures, and can also have a minimalist design of high sensitivity. The gamma imaging detection device has an extremely simple structural design, is lightweight and portable, and is suitable for various imaging scenarios that require mobile and portable applications.
如图2和图3所示,根据本公开的实施例,单根晶体条301靠近成像视野FOV的前端正入射的伽马光子的探测效率小于远离成像视野FOV的其他部分斜入射的伽马光子的探测效率;其中,单根晶体条靠近成像视野的前端端面与成像视野之间的间距小于等于100mm。As shown in Figures 2 and 3, according to an embodiment of the present disclosure, the detection efficiency of gamma photons incident normally on the front end of a single crystal bar 301 close to the imaging field of view FOV is lower than the detection efficiency of gamma photons incident obliquely on other parts far away from the imaging field of view FOV; wherein, the distance between the front end face of the single crystal bar close to the imaging field of view and the imaging field of view is less than or equal to 100 mm.
由于采用上述单根晶体条301或101单独作为探测器,而直接省去了机械准直器,使得本公开实施例的探测器的晶体响应函数(Scintillator response function,简称SRF,代表了对成像视野FOV不同位置处的伽马光子的探测效率)与常规探测器具有显著性差异。如图2所示,在具有金属机械准直器201配合多个晶体单元所构成的探测器202的常规设计中,在正对探测器202的方向上,光子探测效率最高,其他方向由于屏蔽几乎无探测效率,对应的其放射源位置处于正中位置时,SRF最高。反之,如图3所示,在本公开实施例中不具有金属机械准直器而仅采用单根晶体条301作为探测器的方案中,由于单根细长晶体条301准直在正对前端端面时探测效率最低,SRF最低,其他方向探测效率反而较高且能够维持较高较稳定的水平,即单根晶体条对正入射于近端端面的伽马光子的探测效率小于斜入射于近端端面和其他表面的伽马光子的探测效率。可见,本公开实施例的上述伽马成像装置对除正对前端端面位置之外的其他几乎所有入射光子方向都有很好的响应,且对不同角度入射粒子的探测效率不完全相同,可以通过探测器在不同位置处响应的相
对大小判断出不同入射方向的放射源活度分布高低,从而兼顾了所有的位置而非只把灵敏位置限制在准直器开口的一个小角度范围内,这就使得其所具有探测效率和放射源位置的关系与常规设计完全相反。Since the above-mentioned single crystal bar 301 or 101 is used as a detector alone, and the mechanical collimator is directly omitted, the crystal response function (Scintillator response function, referred to as SRF, which represents the detection efficiency of gamma photons at different positions of the imaging field of view FOV) of the detector of the embodiment of the present disclosure is significantly different from that of a conventional detector. As shown in FIG2 , in the conventional design of a detector 202 composed of a metal mechanical collimator 201 and a plurality of crystal units, the photon detection efficiency is the highest in the direction facing the detector 202, and there is almost no detection efficiency in other directions due to shielding, and the corresponding SRF is the highest when the radiation source is in the middle position. On the contrary, as shown in FIG3 , in the solution in which there is no metal mechanical collimator and only a single crystal bar 301 is used as a detector in the embodiment of the present disclosure, since the detection efficiency of the single slender crystal bar 301 is the lowest when it is collimated directly facing the front end face, the SRF is the lowest, while the detection efficiency in other directions is relatively high and can maintain a relatively high and stable level, that is, the detection efficiency of the single crystal bar for gamma photons incident directly on the proximal end face is lower than the detection efficiency of gamma photons obliquely incident on the proximal end face and other surfaces. It can be seen that the above-mentioned gamma imaging device of the embodiment of the present disclosure has a good response to almost all incident photon directions except the position directly facing the front end face, and the detection efficiency for particles incident at different angles is not exactly the same, which can be determined by the relative response of the detector at different positions. The size of the radiation source activity distribution in different incident directions is judged, thus taking all positions into account instead of limiting the sensitive position to a small angle range of the collimator opening. This makes the relationship between detection efficiency and radiation source position completely opposite to that of conventional designs.
因此,基于上述探测原理,即可以设计极简放射源计数和定位装置,其中仅由一根细长条形晶体条构成探测器。且该探测器可在4-pi空间内移动探测,其计数最低的位置朝向放射源所在方向。其中,以该探测器的探测效率与单根晶体对放射源位置的立体角正相关,随着晶体与成像视野Field of view(FOV)距离的增加,探测效率损失严重。因此探测器要尽可能靠近成像视野FOV,具体地,探测器的单根晶体条与成像视野FOV之间的间距d(Distance between FOV and Crystal)可以小于等于100mm(如图5所示d=40mm),同时面对成像视野FOV端面的元件和工装设置要进行简化。Therefore, based on the above detection principle, a minimalist radioactive source counting and positioning device can be designed, in which the detector is composed of only a thin and long crystal strip. And the detector can move and detect in the 4-pi space, and the position with the lowest count is facing the direction of the radioactive source. Among them, the detection efficiency of the detector is positively correlated with the solid angle of a single crystal to the position of the radioactive source. As the distance between the crystal and the imaging field of view (FOV) increases, the detection efficiency is seriously lost. Therefore, the detector should be as close to the imaging field of view FOV as possible. Specifically, the distance d (Distance between FOV and Crystal) between the single crystal strip of the detector and the imaging field of view FOV can be less than or equal to 100 mm (as shown in Figure 5, d = 40 mm), and the components and tooling settings facing the end face of the imaging field of view FOV should be simplified.
与金属准直器探测器和自准直探测器只对某几个方向入射的光子有响应的特征不同,单根细长晶体条在对目标位置响应低的同时兼顾了其他位置,灵敏范围大,只需要少数位置的信息组合就能重建出完整的图像,可以大幅减少采样的位置。因此,本公开实施例的伽马成像装置能够在进行放射源成像时具有更为灵活的采样方案,具体可根据探测器计数高低自适应调整采样步长,在不降低成像精度的前提下减少采样次数,降低采样时间。Unlike metal collimator detectors and self-collimation detectors that only respond to photons incident from certain directions, a single slender crystal strip has a low response to the target position while taking into account other positions, with a large sensitivity range. Only a few positions of information combination are needed to reconstruct a complete image, which can greatly reduce the sampling positions. Therefore, the gamma imaging device of the disclosed embodiment can have a more flexible sampling scheme when imaging radioactive sources. Specifically, the sampling step size can be adaptively adjusted according to the detector count, and the number of sampling times and sampling time can be reduced without reducing the imaging accuracy.
根据本公开的实施例,探测器还包括第一光电器件402。According to an embodiment of the present disclosure, the detector further includes a first photoelectric device 402 .
第一光电器件402耦合在单根晶体条401的远离成像视野的远端,用于读出单根晶体条401中的伽马光子沉积数据。The first optoelectronic device 402 is coupled to a far end of the single crystal bar 401 away from the imaging field of view, and is used to read out the gamma photon deposition data in the single crystal bar 401 .
对于放射源成像装置,仅由一根细长条形单根晶体条401和一个光电器件402组成。其中,可以通过平移和旋转采样,对成像视野FOV内的放射源分布进行成像。该平移可以是沿空间直线或曲线方向的平移,该旋转可以是在空间中以某个固定点或移动点作为圆心的自转动或者围绕转动,如图4所示,该探测器具有单根晶体条401以及设置在单根晶体条401的远端的光电器件402,其中,以该单根晶体条401长度方向上的中心为圆心,可以在一空间平面内对该探测器执行旋转探测,实
现相对于成像视野FOV的0-180°范围的探测效果。The radiation source imaging device is composed of only a single thin and long crystal bar 401 and a photoelectric device 402. The distribution of the radiation source in the imaging field of view FOV can be imaged by translation and rotation sampling. The translation can be a translation along a straight line or curve in space, and the rotation can be a self-rotation or rotation around a fixed point or a moving point in space as the center of the circle. As shown in FIG4 , the detector has a single crystal bar 401 and a photoelectric device 402 arranged at the far end of the single crystal bar 401, wherein the detector can be rotated in a spatial plane with the center of the single crystal bar 401 in the length direction as the center of the circle, so as to realize The detection effect in the range of 0-180° relative to the imaging field of view FOV is shown.
其中,第一光电器件402可以是硅光电倍增管(SiPM),将该光电器件402耦合在单根晶体条401远离成像视野FOV的远端端面上可以实现单端读出光子沉积数据。此外,该单根晶体条401的靠近成像视野FOV的前端端面可以采用一层较薄的塑料工装进行包覆实现对其的移动保护,以达到紧贴成像视野FOV进行探测的目的。The first photoelectric device 402 may be a silicon photomultiplier (SiPM), and coupling the photoelectric device 402 to the end face of the single crystal bar 401 far from the imaging field of view FOV can realize single-end readout of photon deposition data. In addition, the front end face of the single crystal bar 401 close to the imaging field of view FOV can be covered with a thin layer of plastic tooling to achieve mobile protection, so as to achieve the purpose of detection close to the imaging field of view FOV.
根据本公开的实施例,单根晶体条的至少一侧表面的表面粗糙度小于等于0.01微米。According to an embodiment of the present disclosure, the surface roughness of at least one side surface of a single crystal bar is less than or equal to 0.01 micrometer.
对于本公开实施例的单根晶体条而言,其可以为探测用闪烁晶体条,其可以满足闪烁光子在内部的传输要求,且该单根晶体条可以为圆柱体、长方体或者其他形制的长柱体结构,只需要满足其侧视投影图的长宽比大于等于10∶1即可。For the single crystal bar of the embodiment of the present disclosure, it can be a scintillation crystal bar for detection, which can meet the internal transmission requirements of scintillation photons, and the single crystal bar can be a cylinder, a rectangular parallelepiped or other long columnar structure, as long as the aspect ratio of its side view projection is greater than or equal to 10:1.
此外,在上述基础上,还可以对该单根晶体条的柱体的侧表面进行处理(如抛光),使得其具有较好光滑度,减小其柱体侧表面的表面粗糙度,使得粗糙度能够小于等于0.01微米,具体可以采用2000目的砂纸进行打磨,从而可以借助于其光滑表面所具有的镜面反射能力,进一步提高闪烁光子在该单根晶体条中的传输效率,从而有效解决闪烁光子在细长晶体条内的传输距离长,光损失严重的问题,能够显著提升光子传输效率,获取更好的探测能谱,从而提高探测效率和方向定位精准度。In addition, on the basis of the above, the side surface of the column of the single crystal bar can also be processed (such as polishing) to make it have better smoothness, reduce the surface roughness of the side surface of the column, so that the roughness can be less than or equal to 0.01 microns, and specifically, it can be polished with 2000-mesh sandpaper, so that the transmission efficiency of the scintillation photons in the single crystal bar can be further improved by means of the mirror reflection ability of its smooth surface, thereby effectively solving the problem of long transmission distance and serious light loss of scintillation photons in the slender crystal bar, and can significantly improve the photon transmission efficiency, obtain a better detection energy spectrum, thereby improving the detection efficiency and directional positioning accuracy.
基于上述内容,在具体的成像应用中需对成像装置标定传输矩阵,具体步骤为以像素尺寸为步长将成像视野FOV划分出网格点,分别在每个网格点放置点源并用探测器的单根晶体条测量投影数据,将每个位置点源的投影数据组合得到传输矩阵。在这个标定过程中,由于该探测器只由一根单根晶体条组成,没有机械准直器以及晶体间复杂的互相遮挡,其SRF值具有极强的对称性(如图3所示),因此传输矩阵的标定步骤可以大大简化。具体地,只需要测量作为探测器的单根晶体条在中间位置的投影,再利用对SRF的平移和旋转延展到其他位置,即可以得到完整的传输矩阵,进而使得每个放射源位置所需的测量时间更短,以大大缩短传输矩阵标定时间,加快数据处理速度,提高成像效率。
Based on the above, in specific imaging applications, the transmission matrix of the imaging device needs to be calibrated. The specific steps are to divide the imaging field of view FOV into grid points with the pixel size as the step size, place a point source at each grid point, and measure the projection data with a single crystal bar of the detector, and combine the projection data of the point source at each position to obtain the transmission matrix. In this calibration process, since the detector is composed of only a single crystal bar, there is no mechanical collimator and complex mutual occlusion between crystals, and its SRF value has a strong symmetry (as shown in Figure 3), so the calibration steps of the transmission matrix can be greatly simplified. Specifically, it is only necessary to measure the projection of a single crystal bar as a detector at the middle position, and then use the translation and rotation of the SRF to extend to other positions, so as to obtain a complete transmission matrix, thereby shortening the measurement time required for each radiation source position, greatly shortening the calibration time of the transmission matrix, speeding up data processing, and improving imaging efficiency.
根据本公开的实施例,探测器还包括第二光电器件(未示出)。According to an embodiment of the present disclosure, the detector further includes a second photoelectric device (not shown).
第二光电器件耦合在单根晶体条的靠近成像视野的前端,用于配合第一光电器件,读出伽马光子沉积数据,用于获取不同伽马光子沉积深度方向上的能谱。The second photoelectric device is coupled to the front end of the single crystal bar close to the imaging field of view, and is used to cooperate with the first photoelectric device to read out the gamma photon deposition data, so as to obtain the energy spectrum in different gamma photon deposition depth directions.
此外,在上述探测器的单根晶体条的远端耦合第一光电器件的同时,还可以进一步在探测器的单根晶体条的前端耦合另外一个第二光电器件,以能够从前端对光子沉积数据进行读出,从而能够更为有效地结合第一光电器件的读出数据,更为精准地计算出该探测器的单根晶体条内的光子位置。其中,第二光电器件也可以是硅光电倍增管(SiPM)。In addition, while coupling the first optoelectronic device to the far end of the single crystal bar of the detector, another second optoelectronic device can be further coupled to the front end of the single crystal bar of the detector, so that the photon deposition data can be read out from the front end, so that the readout data of the first optoelectronic device can be more effectively combined to more accurately calculate the photon position in the single crystal bar of the detector. The second optoelectronic device can also be a silicon photomultiplier (SiPM).
进一步地,通过在单根晶体条两端分别耦合一个SiPM光电元件作为光电器件,可以更为准确地计算得到伽马光子沉积深度方向上的位置等数据,从而可以在后续针对成像的数据处理过程中,实现对不同深度处统计得到能谱进行分段标定。例如,对于1×1×20mm3的单根晶体条,可以分成10个2mm的深度段,对每一个区段的统计的光子能谱进行单独标定,以提高总体的能量分辨率,其中具体标定步骤包括:先对单根晶体条进行泛场照射,再利用分别耦合在其两端的两个光电器件上探测到的闪烁光子能量Ea和Eb对光子的深度方向位置进行能量标定:
Furthermore, by coupling a SiPM optoelectronic element at both ends of a single crystal bar as an optoelectronic device, the position of the gamma photon deposition depth direction and other data can be calculated more accurately, so that in the subsequent data processing for imaging, the energy spectrum obtained by statistics at different depths can be segmented and calibrated. For example, for a single crystal bar of 1×1× 20mm3 , it can be divided into 10 2mm depth segments, and the statistical photon energy spectrum of each segment is calibrated separately to improve the overall energy resolution, wherein the specific calibration steps include: firstly, flood-field irradiation of the single crystal bar, and then energy calibration of the depth direction position of the photon using the scintillation photon energies Ea and Eb detected by the two optoelectronic devices coupled at its two ends:
Furthermore, by coupling a SiPM optoelectronic element at both ends of a single crystal bar as an optoelectronic device, the position of the gamma photon deposition depth direction and other data can be calculated more accurately, so that in the subsequent data processing for imaging, the energy spectrum obtained by statistics at different depths can be segmented and calibrated. For example, for a single crystal bar of 1×1× 20mm3 , it can be divided into 10 2mm depth segments, and the statistical photon energy spectrum of each segment is calibrated separately to improve the overall energy resolution, wherein the specific calibration steps include: firstly, flood-field irradiation of the single crystal bar, and then energy calibration of the depth direction position of the photon using the scintillation photon energies Ea and Eb detected by the two optoelectronic devices coupled at its two ends:
其中,P(z)是在深度方向上的作用位置,k和t为拟合系数,可以通过实验标定拟合得到。Among them, P(z) is the action position in the depth direction, k and t are fitting coefficients, which can be obtained through experimental calibration fitting.
之后,依次对每个入射的光子事件根据其落在深度段位置对其进行对应系数的能量校正。如此,便可以通过双端耦合光电器件,很好地解决因闪烁光子在细长晶体条内因传输距离长导致光损失严重,造成测得能谱较差的问题,显著提高探测效率。Afterwards, the energy of each incident photon event is corrected with the corresponding coefficient according to the depth segment where it falls. In this way, the problem of poor energy spectrum measurement caused by serious light loss due to the long transmission distance of scintillation photons in the slender crystal strip can be solved through the double-end coupled optoelectronic device, which significantly improves the detection efficiency.
根据本公开的实施例,探测器还包括至少一个第三光电器件。According to an embodiment of the present disclosure, the detector further includes at least one third photoelectric device.
至少一个第三光电器件耦合在单根晶体条的至少一侧表面上。At least one third optoelectronic device is coupled to at least one side surface of the single crystal strip.
为进一步地避免闪烁光子在细长晶体条内的传输距离长而造成光损失严重以及测得的能谱较差的问题,可以在单根晶体条的探测器的柱体的侧表面上进行耦合光电器件数量的增加,实现侧面读出,从而能够
显著增大出光面,减少光子在单根晶体条中的传输光损失,结合上述第一光电器件和第二光电器件的双端读出设计,能够更进一步地改善能谱较差的情况,显著提高光子探测效率。其中,第三光电器件也可以是硅光电倍增管(SiPM)。In order to further avoid the problem of serious light loss and poor measured energy spectrum caused by the long transmission distance of scintillation photons in the slender crystal strip, the number of coupled optoelectronic devices can be increased on the side surface of the column of the detector of a single crystal strip to achieve side readout, so that The light-emitting surface is significantly enlarged, the transmission light loss of photons in a single crystal strip is reduced, and the double-end readout design of the first photoelectric device and the second photoelectric device can further improve the poor energy spectrum and significantly improve the photon detection efficiency. The third photoelectric device can also be a silicon photomultiplier (SiPM).
如图6A-6B所示,根据本公开的实施例,单根晶体条包括多个第一晶体块和多个第二晶体块。As shown in FIGS. 6A-6B , according to an embodiment of the present disclosure, a single crystal bar includes a plurality of first crystal blocks and a plurality of second crystal blocks.
多个第二晶体块与多个第一晶体块彼此交错排列构成一晶体条结构。The plurality of second crystal blocks and the plurality of first crystal blocks are arranged alternately to form a crystal strip structure.
如图6A所示,本公开实施例中作为探测器的单根晶体条601可以是整根长柱体的闪烁晶体条,该闪烁晶体条可以选用发射光谱与吸收光谱至少有部分重叠的闪烁体材料,比如掺铈钆铝镓石榴石(Cerium-doped Gadolinium Aluminum Gallium Garnet,简称GAGG(Ce)或GAGG),从而可以进一步增大不同方向入射光子的探测响应能力上的差异,间接提高了伽马光子的定位成像的角度分辨率。As shown in FIG6A , a single crystal bar 601 used as a detector in the embodiment of the present disclosure may be a whole long cylindrical scintillator crystal bar. The scintillator crystal bar may be made of a scintillator material having an emission spectrum and an absorption spectrum that at least partially overlap, such as cerium-doped Gadolinium Aluminum Gallium Garnet (GAGG (Ce) or GAGG for short), thereby further increasing the difference in detection response capabilities for incident photons from different directions, and indirectly improving the angular resolution of positioning imaging of gamma photons.
另一方面,该单根晶体条还可以是至少两种不同特性的闪烁晶体材料块拼接构成的长柱体结构,如图6B所示,该单根晶体条602由多个第一晶体块621和多个第二晶体块622彼此交叠拼接构成的一晶体条结构。其中,第一晶体块621和第二晶体块622之间在光子传输特性上具有一定差异。如此,便可以直接物理性将长直柱体的单根晶体条划分为多个探测单元,从而能够获知光子具体沉积在哪个单元内,在不显著增加结构复杂性的前提下进一步增加可用于光子方向估计的信息量,提高探测准确率和探测效率。On the other hand, the single crystal bar can also be a long columnar structure composed of at least two scintillating crystal material blocks with different characteristics. As shown in FIG6B , the single crystal bar 602 is a crystal bar structure composed of a plurality of first crystal blocks 621 and a plurality of second crystal blocks 622 overlapped and spliced with each other. Among them, there are certain differences in the photon transmission characteristics between the first crystal block 621 and the second crystal block 622. In this way, the single crystal bar of the long straight column can be directly physically divided into a plurality of detection units, so that it is possible to know in which unit the photon is specifically deposited, and the amount of information that can be used for photon direction estimation is further increased without significantly increasing the complexity of the structure, thereby improving the detection accuracy and detection efficiency.
其中,上述探测用单根晶体条均需要具有上述长宽比大于等于10∶1的尺寸比例设计,利用在其远端和/或前端耦合的光电器件,使得不同方向入射的伽马光子沉积在该单根细长的晶体时,在其耦合端面上会随着照射角度的不同形成明显的响应差异并读出,从而能够显著起到提高探测效率对方向敏感性的作用。Among them, the above-mentioned single crystal bars for detection are all required to have a size ratio design with the above-mentioned aspect ratio greater than or equal to 10:1, and by using optoelectronic devices coupled at its far end and/or front end, when gamma photons incident from different directions are deposited on the single slender crystal, obvious response differences will be formed and read out on its coupled end face as the irradiation angles change, thereby significantly improving the directional sensitivity of the detection efficiency.
根据本公开的实施例,第一晶体块和第二晶体块为闪烁体材料;或者第一晶体块为闪烁体材料,第二晶体块为光导材料;其中,闪烁体材
料的发射光谱和吸收光谱部分重叠,光导材料的折射率大于等于1.5。According to an embodiment of the present disclosure, the first crystal block and the second crystal block are scintillator materials; or the first crystal block is scintillator material and the second crystal block is optical waveguide material; wherein the scintillator material The emission spectrum and absorption spectrum of the material partially overlap, and the refractive index of the optical guide material is greater than or equal to 1.5.
如图6B所示,第一晶体块621和第二晶体块622均可以为闪烁体材料,且第一晶体块621可以是200ns的GAGG材料块,同时第二晶体块622可以是90ns的GAGG材料块,如前述所言,可以能够显著起到提高探测效率对方向敏感性的作用。As shown in FIG6B , the first crystal block 621 and the second crystal block 622 can both be scintillator materials, and the first crystal block 621 can be a 200ns GAGG material block, while the second crystal block 622 can be a 90ns GAGG material block. As mentioned above, this can significantly improve the directional sensitivity of the detection efficiency.
另一方面,该第一晶体块621和第二晶体块622也可以是完全不同的两种材料,如第一晶体块621也可是闪烁晶体,而第二晶体块622也可以是光导材料,具体如K9光学玻璃(折射率1.51,与耦合剂和SiPM元件的折射率近似)或者HZF-62光学玻璃(折射率1.92,与GAGG晶体的折射率接近)。第一晶体块621和第二晶体块622彼此交错排列,也能够显著起到提高探测效率对方向敏感性的作用。On the other hand, the first crystal block 621 and the second crystal block 622 can also be two completely different materials, such as the first crystal block 621 can also be a scintillating crystal, and the second crystal block 622 can also be a light-conducting material, such as K9 optical glass (refractive index 1.51, similar to the refractive index of the coupling agent and SiPM element) or HZF-62 optical glass (refractive index 1.92, close to the refractive index of the GAGG crystal). The first crystal block 621 and the second crystal block 622 are staggered with each other, which can also significantly improve the directional sensitivity of the detection efficiency.
如图7A-图7G所示,根据本公开的实施例,单根晶体条可以包括侧视图为四边形、菱形、三角形、心形、V形的柱体结构。如图7A-图7G所示,本公开实施例作为探测器的单根晶体条701a-701g可以是各类长柱体结构,如侧视投影图形为细长的长方形的柱体701a和701g、菱形的柱体701b、三角形的柱体701c、平行四边形的柱体701d、心形的柱体701e以及V形的柱体701f等,由于其形状的不规则性,也能够起到提高探测效率对方向性敏感性的作用,只需要满足相应的长宽比大于等于10∶1的设计即可。同时,也为该单根晶体条的多样化提供了更多的变化形式,显著提高单根晶体条的探测应用范围,使得其适用场景更为多样化。As shown in FIG. 7A to FIG. 7G, according to an embodiment of the present disclosure, a single crystal bar may include a column structure with a side view of a quadrilateral, a rhombus, a triangle, a heart shape, or a V shape. As shown in FIG. 7A to FIG. 7G, a single crystal bar 701a-701g as a detector in an embodiment of the present disclosure may be various types of long column structures, such as columns 701a and 701g with side view projection figures of slender rectangles, a rhombus column 701b, a triangular column 701c, a parallelogram column 701d, a heart-shaped column 701e, and a V-shaped column 701f, etc. Due to the irregularity of their shapes, they can also play a role in improving the directional sensitivity of the detection efficiency, and only need to meet the corresponding design of a length-to-width ratio greater than or equal to 10:1. At the same time, more variations are provided for the diversification of the single crystal bar, which significantly improves the detection application range of the single crystal bar and makes its applicable scenarios more diverse.
其中,对于如图7G所示的单根晶体条701g而言,其也可以是两种不同特性材料的交叠组合构成,如前述的光导材料和闪烁晶体之间的交叠,从而进一步提高其响应差异性,更为精确地实现对光子沉积数据的探测,获得更高探测效率的同时,确保成像探测数据准确性。Among them, for a single crystal bar 701g as shown in FIG7G , it can also be composed of an overlapping combination of two materials with different properties, such as the overlap between the aforementioned photoconductive material and the scintillation crystal, so as to further improve its response difference, more accurately realize the detection of photon deposition data, obtain higher detection efficiency, and ensure the accuracy of imaging detection data.
根据本公开的实施例,优选的,探测器还包括折射层和/或吸收层。According to an embodiment of the present disclosure, preferably, the detector further includes a refractive layer and/or an absorption layer.
折射层覆盖在单根晶体条靠近成像视野的前端端面上,折射层的折射率大于单根晶体条的闪烁体材料的折射率,用于对入射伽马光子进行折射,增大伽马光子在前端端面上的损失;
The refractive layer covers the front end face of the single crystal bar close to the imaging field of view, and the refractive index of the refractive layer is greater than the refractive index of the scintillator material of the single crystal bar, and is used to refract the incident gamma photons to increase the loss of gamma photons on the front end face;
吸收层覆盖在单根晶体条靠近成像视野的前端端面上,或者覆盖在折射层上,用于对入射伽马光子进行吸收,增大伽马光子在前端端面上的损失。The absorption layer is covered on the front end face of a single crystal bar close to the imaging field of view, or on the refractive layer, and is used to absorb incident gamma photons and increase the loss of gamma photons on the front end face.
对于在远离成像视野FOV的远端端面耦合光电器件的情况,在正对单根晶体条的前端端面入射的伽马光子更多沉积在其远端,产生的闪烁光子需要经过更长的光程才能到达光电器件,由于闪烁晶体的自吸收,会损失部分信号,导致探测效率相对降低,从而使得与其他方向入射光子的探测效率的差异性增大。In the case of coupling optoelectronic devices at the far end face far away from the imaging field of view FOV, gamma photons incident on the front end face of a single crystal bar are more likely to be deposited at its far end, and the generated scintillation photons need to travel a longer optical path to reach the optoelectronic device. Due to the self-absorption of the scintillation crystal, part of the signal will be lost, resulting in a relatively lower detection efficiency, thereby increasing the difference in detection efficiency with photons incident from other directions.
为了进一步增大正入射于前端端面的伽马光子和斜入射于前端端面的伽马光子的探测效率的差别,可以在靠近成像视野FOV的(远离第一光电器件)的前端端面涂上高折射率材料构成折射层(未示出),其中,该高折射率材料的折射率可以大于等于单根晶体条(如GAGG材料折射率为1.91)的高折射率材料,这种高折射率材料可以为二氧化钛、特氟龙、硫酸钡等,借以增大伽马光子产生的闪烁光子在该端面的损失,达到提高不同方向入射光子响应差异的效果。其中,正入射于闪烁体前端端面的伽马光子大多沉积于前端端面并在前端端面产生闪烁光子,让前端端面的闪烁光子损失可以减小对正入射于闪烁体前端端面的伽马光子的探测效率,从而增大它于其他方向入射的伽马光子的探测效率的差异。In order to further increase the difference in detection efficiency between gamma photons incident directly on the front end face and gamma photons incident obliquely on the front end face, a high refractive index material can be coated on the front end face close to the imaging field of view FOV (far away from the first optoelectronic device) to form a refractive layer (not shown), wherein the refractive index of the high refractive index material can be greater than or equal to the high refractive index material of a single crystal bar (such as the refractive index of GAGG material is 1.91), and such high refractive index material can be titanium dioxide, Teflon, barium sulfate, etc., so as to increase the loss of scintillation photons generated by gamma photons on the end face, thereby achieving the effect of improving the response difference of photons incident from different directions. Among them, most of the gamma photons incident directly on the front end face of the scintillator are deposited on the front end face and generate scintillation photons on the front end face, so that the loss of scintillation photons on the front end face can reduce the detection efficiency of gamma photons incident directly on the front end face of the scintillator, thereby increasing the difference in detection efficiency between it and gamma photons incident from other directions.
另外,在上述折射层设计基础上或者直接替换上述折射层设计,还可以在该前端端面上涂覆可见光子吸收材料作为吸收层,该可见光子吸收材料可以为黑胶带或其他黑色物质等,借以增大伽马光子所产生的闪烁光子在该端面的损失,达到提高不同方向入射光子响应差异的效果。In addition, based on the above-mentioned refractive layer design or directly replacing the above-mentioned refractive layer design, a visible photon absorbing material can also be coated on the front end face as an absorption layer. The visible photon absorbing material can be black tape or other black substances, so as to increase the loss of scintillation photons generated by gamma photons on the end face, thereby achieving the effect of increasing the response difference of incident photons in different directions.
根据本公开的实施例,所述单根晶体条的第一晶体块和第二晶体块的掺杂离子浓度和/或掺杂剂材料不同,掺杂离子浓度为0.01%~0.6%。According to an embodiment of the present disclosure, the first crystal block and the second crystal block of the single crystal bar have different doping ion concentrations and/or dopant materials, and the doping ion concentration is 0.01% to 0.6%.
其中,单根晶体条可以为不同掺杂剂的闪烁晶体块交错排列或同一掺杂剂但不同掺杂浓度的闪烁晶体块交错排列。其中,所选择的晶体掺杂剂可以为Ce、Mg、Ti等离子,能够显著改变晶体的发光效率和发光衰变时间,且其相应的掺杂剂浓度范围从0.01%~0.6%可选,使得入射光
子沉积在晶体条不同深度位置处的光子探测效率差异增大。其中,第一晶体块和第二晶体块的掺杂剂材料可以不同,例如第一晶体块的晶体掺杂剂可以是Ce,而第二晶体块的晶体掺杂剂可以是Mg,二者交错排列可以构成上述单根晶体条。Among them, a single crystal bar can be a staggered arrangement of scintillation crystal blocks with different dopants or staggered arrangement of scintillation crystal blocks with the same dopant but different doping concentrations. Among them, the selected crystal dopant can be Ce, Mg, Ti plasma, etc., which can significantly change the luminous efficiency and luminous decay time of the crystal, and its corresponding dopant concentration range is optional from 0.01% to 0.6%, so that the incident light The difference in photon detection efficiency at different depths of the crystal strip increases. The dopant materials of the first crystal block and the second crystal block can be different. For example, the crystal dopant of the first crystal block can be Ce, and the crystal dopant of the second crystal block can be Mg. The staggered arrangement of the two can form the above-mentioned single crystal strip.
其中,若在单根晶体条长度方向上按照一定间距间隔进行晶体掺杂剂的离子掺杂操作或者不同浓度的离子掺杂操作,可以在长度方向上形成不同掺杂剂的闪烁晶体的交错或者形成同一掺杂剂但不同掺杂浓度的闪烁晶体的交错,从而也可以显著增大不同深度的光子探测效率,便于实现上述如分段标定以及传输矩阵标定的相应效果。其中,第一晶体块和第二晶体块可以是同一掺杂剂材料单掺杂离子浓度可以不同,例如第一晶体块和第二晶体块的晶体掺杂剂均可以是Ce,而第一晶体块的Ce的掺杂离子浓度可以是0.01%,而第二晶体块的掺杂离子浓度可以是0.26%,二者交错排列可以构成上述单根晶体条。Wherein, if the ion doping operation of the crystal dopant or the ion doping operation of different concentrations is performed at a certain interval in the length direction of a single crystal bar, the staggering of scintillation crystals with different dopants or the staggering of scintillation crystals with the same dopant but different doping concentrations can be formed in the length direction, thereby significantly increasing the photon detection efficiency at different depths, and facilitating the realization of the above-mentioned corresponding effects such as segmented calibration and transmission matrix calibration. Wherein, the first crystal block and the second crystal block can be the same dopant material with different single doping ion concentrations, for example, the crystal dopant of the first crystal block and the second crystal block can both be Ce, and the doping ion concentration of Ce in the first crystal block can be 0.01%, and the doping ion concentration of Ce in the second crystal block can be 0.26%, and the staggered arrangement of the two can constitute the above-mentioned single crystal bar.
因此,单根晶体条可沿其长度方向形成不同晶体掺杂剂的交错或者同一掺杂剂但不同掺杂浓度的交错。Therefore, a single crystal strip can be staggered along its length with different crystal dopants or with the same dopant but at different doping concentrations.
根据本公开的实施例,探测器还包括阻挡层。According to an embodiment of the present disclosure, the detector further includes a blocking layer.
阻挡层耦合在单根晶体条靠近成像视野的前端的端面上,以阻挡朝向前端的端面正入射的伽马光子。The blocking layer is coupled to the end face of the single crystal bar near the front end of the imaging field of view to block the gamma photons incident normally toward the end face of the front end.
可在靠近成像视野FOV的单根晶体条的前端端面覆盖高密度材料形成的薄片层作为阻挡层,能够显著阻挡正入射的伽马光子,降低正入射伽马光子的探测效率,从而增大方向响应差异。其中,该高密度材料的选择可以是钨、铅等对光子阻挡本领强的重金属材料中至少之一。A thin layer of high-density material can be covered on the front end face of a single crystal bar near the imaging field of view FOV as a blocking layer, which can significantly block the normally incident gamma photons and reduce the detection efficiency of normally incident gamma photons, thereby increasing the directional response difference. The high-density material can be at least one of heavy metal materials with strong photon blocking ability such as tungsten and lead.
上述图1-图7G所示的单根晶体条使得其对应的伽马成像装置能够利用单根细长晶体自身的形状特点和性质实现对光子的准直,不需要借助外加的金属准直器或者是利用其他的晶体探测器单元,可仅由一根细长闪烁晶体和一个耦合的光电器件实现对放射源的定位和成像,与自准直探测器的多层探测器单元设计相比,极大简化了系统探测器结构的设计,减少了电子学读出通道数,减轻了设备的重量和体积,能实现便携式成像,且成本低廉。而且,没有了金属准直器对光子的阻挡,大大提
升了装置自身的探测效率,且由单根细长晶体组成的放射源定位装置能实现计数和定位的双功能,组成简单,定位方便。The single crystal strip shown in Figures 1 to 7G above enables the corresponding gamma imaging device to collimate photons using the shape characteristics and properties of the single slender crystal itself, without the need for an external metal collimator or other crystal detector units. The positioning and imaging of the radiation source can be achieved with only a slender scintillation crystal and a coupled optoelectronic device. Compared with the multi-layer detector unit design of the self-collimating detector, the design of the system detector structure is greatly simplified, the number of electronic readout channels is reduced, the weight and volume of the equipment are reduced, and portable imaging can be achieved at a low cost. Moreover, without the blocking of photons by the metal collimator, the The detection efficiency of the device itself is improved, and the radiation source positioning device composed of a single slender crystal can realize the dual functions of counting and positioning, with simple composition and convenient positioning.
需要说明的是,上述所提及的针对本公开实施例的单根晶体条的相关设计,均或多或少地能够显著起到提高探测效率对方向敏感性的作用,具体不再赘述。It should be noted that the above-mentioned related designs for the single crystal bar of the embodiment of the present disclosure can more or less significantly play a role in improving the directional sensitivity of the detection efficiency, and the details will not be repeated here.
此外,如图9所示,设计放射源平面的伽马成像装置,其作为探测器的单根晶体条901的前端端面正对成像视野FOV平面,并沿平行于成像视野FOV的方向在成像视野FOV对应的平面A上进行二维点阵平移采样,平面A上可以具有多个采样点A1构成的二维点阵,可重建得到成像视野FOV平面的放射源分布图。In addition, as shown in FIG9 , a gamma imaging device for a radiation source plane is designed, in which the front end face of a single crystal bar 901 serving as a detector faces the imaging field of view FOV plane, and two-dimensional dot matrix translation sampling is performed on a plane A corresponding to the imaging field of view FOV in a direction parallel to the imaging field of view FOV. Plane A may have a two-dimensional dot matrix composed of multiple sampling points A1, and a radiation source distribution map of the imaging field of view FOV plane may be reconstructed.
如图8A和图8B所示,本公开的另一方面提供了一种伽马成像装置,其中,包括至少一个单根晶体条构成的晶体条阵列和第一电路板。As shown in FIG. 8A and FIG. 8B , another aspect of the present disclosure provides a gamma imaging device, which includes a crystal bar array consisting of at least one single crystal bar and a first circuit board.
至少一个单根晶体条构成的晶体条阵列用于相对于成像视野的移动以探测成像视野的入射伽马光子,实现对入射伽马光子的准直,以用于实现伽马成像,其中,单根晶体条的长宽比大于10∶1;A crystal bar array composed of at least one single crystal bar is used to move relative to an imaging field of view to detect incident gamma photons in the imaging field of view, and to collimate the incident gamma photons to achieve gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10:1;
第一电路板与晶体条阵列远离成像视野的远端相耦合,用于输出晶体条阵列对成像视野的探测数据。The first circuit board is coupled to the far end of the crystal bar array away from the imaging field of view, and is used to output detection data of the crystal bar array to the imaging field of view.
如图8A和图8B所示,可以沿每个单根晶体条靠近成像视野FOV(尺寸满足200×200×200mm3)的前端端面所处平面在空间中组合多个单根晶体条形成晶体条阵列801、802。当在作为单层探测器的晶体条阵列801、802的远端端面各自耦合一层电路板803、804,以作为第一电路板。其中,该第一电路板803、804上可以布置对应多个与上述晶体条阵列801、802的远端端面相耦合的上述第一光电器件,从而仅用单层探测器+电路板实现高集成度、简单结构的伽马成像。As shown in FIG8A and FIG8B , a plurality of single crystal bars can be combined in space along the plane where the front end face of each single crystal bar is located close to the imaging field of view FOV (the size meets 200×200×200 mm 3 ) to form crystal bar arrays 801 and 802. When a layer of circuit board 803 and 804 are coupled to the distal end faces of the crystal bar arrays 801 and 802 as single-layer detectors, they are respectively used as the first circuit board. The first circuit boards 803 and 804 can be arranged with a plurality of the first optoelectronic devices coupled to the distal end faces of the crystal bar arrays 801 and 802, so as to achieve high integration and simple structure gamma imaging with only a single-layer detector + circuit board.
如图8B所示,根据本公开实施例,上述伽马成像装置还包括第二电路板,第二电路板与所述晶体条阵列远离成像视野的前端相耦合,用于配合所述第一电路板,输出所述晶体条阵列对所述成像视野的探测数据。As shown in FIG8B , according to an embodiment of the present disclosure, the gamma imaging device further includes a second circuit board, which is coupled to the front end of the crystal bar array away from the imaging field of view, and is used to cooperate with the first circuit board to output detection data of the crystal bar array on the imaging field of view.
如图8B所示,在晶体条阵列801、802的远端端面各自耦合一层电
路板803、804基础上,在该晶体条阵列801、802的前端端面各自耦合一层电路板805、806,作为第二电路板。其中,该第二电路板803、804上可以布置对应多个与上述晶体条阵列801、802的前端端面相耦合的上述第二光电器件。因此,借助于上述第二电路板的配合,可实现单层探测器+前后两层电路板的伽马成像装置设计,以进一步提升其成像精度而不显著增加结构复杂性。As shown in FIG8B , a layer of electric current is coupled to each of the distal end faces of the crystal bar arrays 801 and 802. On the basis of the circuit boards 803 and 804, a layer of circuit boards 805 and 806 are coupled to the front end faces of the crystal bar arrays 801 and 802, respectively, as the second circuit board. The second circuit boards 803 and 804 can be arranged with a plurality of the second optoelectronic devices coupled to the front end faces of the crystal bar arrays 801 and 802. Therefore, with the cooperation of the second circuit board, the design of a gamma imaging device with a single-layer detector + front and rear two-layer circuit boards can be realized, so as to further improve its imaging accuracy without significantly increasing the structural complexity.
其中,上述图8A和图8B所示晶体条阵列801、802可以由细长单根闪烁晶体组成探测器模块。多根细长单晶体间隔排列,形成该探测器阵列,通过平移旋转等移动探测获得不同角度的采样,从而能够得到更好的伽马图像。The crystal bar arrays 801 and 802 shown in Figures 8A and 8B can be composed of a single thin scintillation crystal to form a detector module. Multiple thin single crystals are arranged at intervals to form the detector array, and sampling at different angles is obtained through translation and rotation detection, so as to obtain better gamma images.
如图8B所示,根据本公开的实施例,伽马成像装置还包括闪烁晶体层,闪烁晶体层位于所述第一电路板和所述晶体条阵列的远端端面之间,以接收通过所述晶体条阵列的剩余闪烁光子。As shown in FIG8B , according to an embodiment of the present disclosure, the gamma imaging device further includes a scintillation crystal layer, which is located between the first circuit board and the distal end surface of the crystal bar array to receive the remaining scintillation photons passing through the crystal bar array.
如图8B所示,在上述多根晶体条形成的阵列探测器模块基础上,可以在晶体模块的远端再耦合一个完整的闪烁晶体层807,该闪烁晶体层807可以位于第一电路板803和晶体条阵列801的源端端面之间,以接收剩余穿透光子,能够形成“梳齿型”探测器阵列,从而可以进一步提高成像质量。As shown in FIG8B , based on the array detector module formed by the above-mentioned multiple crystal bars, a complete scintillation crystal layer 807 can be coupled at the far end of the crystal module. The scintillation crystal layer 807 can be located between the first circuit board 803 and the source end face of the crystal bar array 801 to receive the remaining penetrating photons, thereby forming a "comb-tooth-type" detector array, thereby further improving the imaging quality.
其中,上述晶体条阵列801、802中的单根晶体条单元可以是上述图1-图7G所示的单根晶体条,使得其对应的伽马成像装置能够利用单根细长晶体自身的形状特点和性质实现对光子的准直,不需要借助外加的金属准直器或者是利用其他的晶体探测器单元,可仅由一根根细长闪烁晶体彼此排布构成阵列,以在该阵列的移动探测过程中进一步实现对放射源的定位和成像,极大简化了系统的设计,减轻了设备的重量和体积,能实现便携式成像,且成本低廉。Among them, the single crystal bar unit in the above-mentioned crystal bar arrays 801 and 802 can be the single crystal bar shown in the above-mentioned Figures 1-7G, so that the corresponding gamma imaging device can utilize the shape characteristics and properties of the single slender crystal itself to achieve collimation of photons, without the need for an additional metal collimator or the use of other crystal detector units. It can only be composed of a series of slender scintillation crystals arranged with each other to form an array, so as to further realize the positioning and imaging of the radiation source during the mobile detection process of the array, which greatly simplifies the design of the system, reduces the weight and volume of the equipment, and can achieve portable imaging with low cost.
可见,本公开实施例的上述伽马成像装置能够设计为脑SPECT成像装置,使用多根晶体阵列探测器模块组成单层探测器组成环绕人脑的头盔,轻便灵活可佩戴,具有极高的商业价值和科学研究价值。It can be seen that the above-mentioned gamma imaging device of the embodiment of the present disclosure can be designed as a brain SPECT imaging device, which uses multiple crystal array detector modules to form a single-layer detector to form a helmet that surrounds the human brain. It is light, flexible and wearable, and has extremely high commercial value and scientific research value.
本公开的又一方面提供了一种应用于上述的伽马成像装置的成像
方法。Another aspect of the present disclosure provides an imaging device applied to the above-mentioned gamma imaging device. method.
如图5所示,本公开实施例的上述伽马成像装置,可以仅由一根细长条形闪烁晶体和一个光电器件组成。通过平移和旋转采样,对成像视野FOV内的放射源分布进行成像。同时设计自适应采样算法,在计数低处减小采样步长Δx,而在计数高处增加采样步长Δx,从而在保证成像精度的同时尽可能减少采样次数,降低采样时间。As shown in FIG5 , the gamma imaging device of the embodiment of the present disclosure may be composed of only one slender strip scintillation crystal and one optoelectronic device. The distribution of the radiation source within the imaging field of view FOV is imaged by translational and rotational sampling. At the same time, an adaptive sampling algorithm is designed to reduce the sampling step length Δx at low counts and increase the sampling step length Δx at high counts, thereby minimizing the number of sampling times and reducing the sampling time while ensuring the imaging accuracy.
对于图像重建,该单根晶体条构成的探测器的SRF是下冲的形状(如图3所示),与常规的金属准直器探测器相反,用Siddon算法进行滤波,并反投影解析重建时,得到的重建图像亮处代表放射源活度低,暗处代表放射源活度高,需要再对图像做值的大小变换处理才能得到代表放射源分布的正向图像:
For image reconstruction, the SRF of the detector composed of a single crystal strip is in a downward-thrusting shape (as shown in FIG3 ). In contrast to conventional metal collimator detectors, when Siddon algorithm is used for filtering and back-projection analytical reconstruction, the bright areas of the reconstructed image represent low activity of the radiation source, and the dark areas represent high activity of the radiation source. The image needs to be transformed in value to obtain a forward image representing the distribution of the radiation source:
For image reconstruction, the SRF of the detector composed of a single crystal strip is in a downward-thrusting shape (as shown in FIG3 ). In contrast to conventional metal collimator detectors, when Siddon algorithm is used for filtering and back-projection analytical reconstruction, the bright areas of the reconstructed image represent low activity of the radiation source, and the dark areas represent high activity of the radiation source. The image needs to be transformed in value to obtain a forward image representing the distribution of the radiation source:
其中,y′i代表变换后得到的正向分布图,max{y}代表原反向图中的最大值,max{y}代表原反向图中的最小值。其中,若采用ML-EM迭代图像重建算法,则得到的图像是正向图,无需再做大小变换处理。Among them, y′ i represents the forward distribution map obtained after transformation, max{y} represents the maximum value in the original reverse map, and max{y} represents the minimum value in the original reverse map. Among them, if the ML-EM iterative image reconstruction algorithm is used, the image obtained is a forward map, and no size transformation is required.
如图10A和图10B所示,在蒙特卡洛模拟验证中,当FOV直径D为40mm,探测器与FOV之间的距离d为45mm时,达到4.3×10-5的平均探测效率,能分辨直径为3mm,圆心距离为6mm的热圆柱;当FOV直径D为100mm,探测器与FOV距离d为45mm时,达到3.0×10-5的平均探测效率,能分辨直径为3mm,圆心距离为6mm的热圆柱。As shown in FIG10A and FIG10B , in the Monte Carlo simulation verification, when the FOV diameter D is 40 mm and the distance d between the detector and the FOV is 45 mm, the average detection efficiency is 4.3×10 -5 , and the thermal cylinder with a diameter of 3 mm and a center distance of 6 mm can be distinguished; when the FOV diameter D is 100 mm and the distance d between the detector and the FOV is 45 mm, the average detection efficiency is 3.0×10 -5 , and the thermal cylinder with a diameter of 3 mm and a center distance of 6 mm can be distinguished.
相应地,在实际实验验证中,通过搭建单晶体探测器原型装置作为实际样机,来测试其成像性能,选取1×1×20mm3的单根GAGG(Ce)闪烁晶体条作为探测器,双端耦合两个SiPM元件,并使用平移和旋转平台来实现扫描轨迹和模拟点源在不同位置的成像。如图11所示,从重建结果上可见对6mm间距的单点源、两点源和四点源的重建图像效果,当FOV直径为20mm,探测器与FOV距离d为45mm时,能达到1.8×10-5的平均探测效率,且可以清晰分辨两个相距6mm的点源,且对多点源的分布也展示出了极好的分辨能力。Accordingly, in the actual experimental verification, a single crystal detector prototype device was built as an actual prototype to test its imaging performance. A single GAGG (Ce) scintillating crystal strip of 1×1×20 mm 3 was selected as the detector, two SiPM elements were coupled at both ends, and a translation and rotation platform was used to realize the scanning trajectory and the imaging of simulated point sources at different positions. As shown in Figure 11, the reconstruction results show the reconstructed image effects of single point sources, two point sources and four point sources with a spacing of 6 mm. When the FOV diameter is 20 mm and the distance d between the detector and the FOV is 45 mm, the average detection efficiency can reach 1.8×10 -5 , and two point sources 6 mm apart can be clearly distinguished, and the distribution of multiple point sources also shows excellent resolution.
至此,已经结合附图对本公开实施例进行了详细描述。
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings.
以上所述的具体实施例,对本公开的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本公开的具体实施例而已,并不用于限制本公开,凡在本公开的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本公开的保护范围之内。
The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present disclosure. It should be understood that the above description is only a specific embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.
Claims (16)
- 一种伽马成像装置,其中,包括探测器,该探测器包括:A gamma imaging device, comprising a detector, the detector comprising:单根晶体条,用于相对于成像视野的移动以探测成像视野的入射伽马光子,实现对所述入射伽马光子的准直,以用于实现伽马成像,其中,所述单根晶体条的长宽比大于10∶1。A single crystal bar is used to move relative to an imaging field of view to detect incident gamma photons in the imaging field of view and to collimate the incident gamma photons for gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10:1.
- 根据权利要求1所述的伽马成像装置,其中,所述单根晶体条靠近所述成像视野的前端正入射的伽马光子的探测效率小于远离所述成像视野的其他部分斜入射的伽马光子的探测效率;其中,所述单根晶体条靠近所述成像视野的前端端面与所述成像视野之间的间距小于等于100mm。The gamma imaging device according to claim 1, wherein the detection efficiency of gamma photons incident normally on the front end of the single crystal bar close to the imaging field of view is less than the detection efficiency of gamma photons incident obliquely on other parts away from the imaging field of view; wherein the distance between the front end face of the single crystal bar close to the imaging field of view and the imaging field of view is less than or equal to 100 mm.
- 根据权利要求1所述的伽马成像装置,其中,所述探测器还包括:The gamma imaging device according to claim 1, wherein the detector further comprises:第一光电器件,耦合在所述单根晶体条的远离所述成像视野的远端,用于读出所述单根晶体条中的伽马光子沉积数据。A first optoelectronic device is coupled to a far end of the single crystal bar away from the imaging field of view and is used to read out gamma photon deposition data in the single crystal bar.
- 根据权利要求1所述的伽马成像装置,其中,所述单根晶体条的至少一侧表面的表面粗糙度小于等于0.01微米。The gamma imaging device according to claim 1, wherein the surface roughness of at least one side surface of the single crystal bar is less than or equal to 0.01 micrometer.
- 根据权利要求3所述的伽马成像装置,其中,所述探测器还包括:The gamma imaging device according to claim 3, wherein the detector further comprises:第二光电器件,耦合在所述单根晶体条的靠近所述成像视野的前端,用于配合所述第一光电器件,读出所述伽马光子沉积数据,用于获取不同伽马光子沉积深度方向上的能谱。A second photoelectric device is coupled to the front end of the single crystal bar close to the imaging field of view, and is used to cooperate with the first photoelectric device to read out the gamma photon deposition data to obtain energy spectra in different gamma photon deposition depth directions.
- 根据权利要求3或5所述的伽马成像装置,其中,所述探测器还包括:The gamma imaging device according to claim 3 or 5, wherein the detector further comprises:至少一个第三光电器件,耦合在所述单根晶体条的至少一侧表面上。At least one third optoelectronic device is coupled to at least one side surface of the single crystal strip.
- 根据权利要求1所述的伽马成像装置,其中,所单根晶体条包括:The gamma imaging device according to claim 1, wherein the single crystal bar comprises:多个第一晶体块,a plurality of first crystal blocks,多个第二晶体块,与所述多个第一晶体块彼此交错排列构成一晶体 条结构。A plurality of second crystal blocks are arranged alternately with the plurality of first crystal blocks to form a crystal Strip structure.
- 根据权利要求7所述的伽马成像装置,其中,The gamma imaging device according to claim 7, wherein:所述第一晶体块和第二晶体块为闪烁体材料;或者The first crystal block and the second crystal block are scintillator materials; or所述第一晶体块为闪烁体材料,所述第二晶体块为光导材料;The first crystal block is a scintillator material, and the second crystal block is a light-conducting material;其中,所述闪烁体材料的发射光谱和吸收光谱部分重叠,所述光导材料的折射率大于等于1.5。The emission spectrum and absorption spectrum of the scintillator material partially overlap, and the refractive index of the optical waveguide material is greater than or equal to 1.5.
- 根据权利要求1所述的伽马成像装置,其中,所述单根晶体条可以包括侧视图为四边形、菱形、三角形、心形、V形的柱体结构。The gamma imaging device according to claim 1, wherein the single crystal bar may include a columnar structure having a quadrilateral, a diamond, a triangle, a heart, or a V shape in a side view.
- 根据权利要求2所述的伽马成像装置,其中,所述探测器还包括:The gamma imaging device according to claim 2, wherein the detector further comprises:折射层,覆盖在所述单根晶体条靠近所述成像视野的前端端面上,所述折射层的折射率大于所述单根晶体条的闪烁体材料的折射率,用于对所述入射伽马光子产生的闪烁光子进行折射,增大闪烁光子在所述前端端面上的损失;和/或a refractive layer covering the front end face of the single crystal bar close to the imaging field of view, the refractive layer having a refractive index greater than the refractive index of the scintillator material of the single crystal bar, and being used for refracting scintillation photons generated by the incident gamma photons to increase the loss of scintillation photons on the front end face; and/or吸收层,覆盖在所述单根晶体条靠近所述成像视野的前端端面上,或者覆盖在所述折射层上,用于对所述入射伽马光子产生的闪烁光子进行吸收,增大闪烁光子在所述前端的端面上的损失。The absorption layer is covered on the front end face of the single crystal bar close to the imaging field of view, or on the refractive layer, and is used to absorb the scintillation photons generated by the incident gamma photons to increase the loss of the scintillation photons on the front end face.
- 根据权利要求7所述的伽马成像装置,其中,所述单根晶体条的第一晶体块和第二晶体块的掺杂离子浓度和/或掺杂剂材料不同,所述掺杂离子浓度为0.01%~0.6%。The gamma imaging device according to claim 7, wherein the doping ion concentration and/or dopant material of the first crystal block and the second crystal block of the single crystal bar are different, and the doping ion concentration is 0.01% to 0.6%.
- 根据权利要求3所述的伽马成像装置,其中,所述探测器还包括:The gamma imaging device according to claim 3, wherein the detector further comprises:阻挡层,耦合在所述单根晶体条靠近所述成像视野的前端端面上,以阻挡朝向所述前端端面正入射的伽马光子。A blocking layer is coupled to the front end face of the single crystal bar close to the imaging field of view to block gamma photons incident normally toward the front end face.
- 一种伽马成像装置,其中,包括:A gamma imaging device, comprising:至少一个单根晶体条构成的晶体条阵列,用于相对于成像视野的移动以探测成像视野的入射伽马光子,实现对所述入射伽马光子的准直,以用于实现伽马成像,其中,所述单根晶体条的长宽比大于10∶1;A crystal bar array consisting of at least one single crystal bar, used to move relative to an imaging field of view to detect incident gamma photons in the imaging field of view, and to collimate the incident gamma photons to achieve gamma imaging, wherein the aspect ratio of the single crystal bar is greater than 10:1;第一电路板,与所述晶体条阵列远离成像视野的远端相耦合,用于 输出所述晶体条阵列对所述成像视野的探测数据。A first circuit board is coupled to the far end of the crystal bar array away from the imaging field of view, and is used to Output detection data of the crystal strip array to the imaging field of view.
- 根据权利要求13所述的伽马成像装置,其中,还包括:The gamma imaging device according to claim 13, further comprising:第二电路板,与所述晶体条阵列远离成像视野的前端相耦合,用于配合所述第一电路板,输出所述晶体条阵列对所述成像视野的探测数据。The second circuit board is coupled to the front end of the crystal bar array away from the imaging field of view, and is used to cooperate with the first circuit board to output detection data of the crystal bar array on the imaging field of view.
- 根据权利要求13所述的伽马成像装置,其中,还包括:The gamma imaging device according to claim 13, further comprising:闪烁晶体层,位于所述第一电路板和所述晶体条阵列的远端端面之间,以接收通过所述晶体条阵列的剩余闪烁光子。The scintillation crystal layer is located between the first circuit board and the distal end surface of the crystal bar array to receive the remaining scintillation photons passing through the crystal bar array.
- 一种权利要求1-15中任一项所述的伽马成像装置的成像方法。 An imaging method for a gamma imaging device according to any one of claims 1 to 15.
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CN107260194A (en) * | 2016-04-08 | 2017-10-20 | 山西锦地裕成医疗设备有限公司 | Method and image rebuilding method and system for positron emission tomography imaging |
CN109765603A (en) * | 2017-11-09 | 2019-05-17 | 苏州瑞派宁科技有限公司 | A light guide and nuclear detector |
CN115685305A (en) * | 2022-10-31 | 2023-02-03 | 清华大学 | Gamma imaging device and imaging method thereof |
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