WO2023243438A1

WO2023243438A1 - Substrate treatment device and substrate treatment method

Info

Publication number: WO2023243438A1
Application number: PCT/JP2023/020620
Authority: WO
Inventors: 洋丸本
Original assignee: 東京エレクトロン株式会社
Priority date: 2022-06-16
Filing date: 2023-06-02
Publication date: 2023-12-21
Also published as: TW202414636A

Abstract

A substrate treatment device according to an aspect of the present disclosure is provided with: a substrate holding part (31); an optical sensor (60); and a control unit (18). The substrate holding part (31) holds and rotates a substrate to be treated. The optical sensor (60) irradiates the substrate that is held and rotated by the substrate holding part (31) with light and receives reflection light. The control unit (18) controls each part. In addition, the control unit (18) has a generation unit (18a) and a determination unit (18c). The generation unit (18a) causes the optical sensor (60) to irradiate the substrate that is held and rotated by the substrate holding part (31) with light and acquires changes in intensity of the reflection light in a time period during which the substrate is rotating, thus generating periodic fluctuation data. The determination unit (18c) determines whether or not the holding state of the substrate that is held by the substrate holding part (31) is normal on the basis of the periodic fluctuation data.

Description

Substrate processing equipment and substrate processing method

The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.

Conventionally, single-wafer processing in which substrates such as semiconductor wafers (hereinafter also referred to as wafers) are processed one by one is performed while rotating the substrate while holding it in a substrate holder (see Patent Document 1).

Patent No. 5661022

The present disclosure provides a technique that can accurately detect the holding state of a substrate.

A substrate processing apparatus according to one aspect of the present disclosure includes a substrate holding section, an optical sensor, and a control section. The substrate holding section holds and rotates a substrate to be processed. The optical sensor irradiates the rotating substrate held by the substrate holder with light and receives reflected light. The control section controls each section. Further, the control section includes a creation section and a determination section. The creation unit irradiates light from the optical sensor to the rotating substrate held by the substrate holding unit, obtains changes in intensity of reflected light during a period when the substrate is rotating, and creates periodic fluctuation data. The determining unit determines whether or not the holding state of the substrate held by the substrate holding unit is normal based on the periodic fluctuation data.

According to the present disclosure, the holding state of the substrate can be detected with high accuracy.

FIG. 1 is a schematic diagram showing a schematic configuration of a substrate processing system according to an embodiment. FIG. 2 is a schematic diagram showing an example of a specific configuration of the processing unit according to the embodiment. FIG. 3 is a block diagram showing an example of the configuration of the control device according to the embodiment. FIG. 4 is a diagram illustrating an example of periodic fluctuation data according to the embodiment. FIG. 5 is a diagram for explaining the state of a wafer held by the substrate holding unit according to the embodiment. FIG. 6 is a diagram illustrating an example of difference data according to the embodiment. FIG. 7 is a flowchart illustrating an example of a control processing procedure executed by the substrate processing system according to the embodiment. FIG. 8 is a flowchart illustrating an example of the procedure of the holding abnormality detection process executed by the substrate processing system according to the embodiment. FIG. 9 is a flowchart illustrating an example of the procedure of the temporal change detection process executed by the substrate processing system according to the embodiment.

Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method disclosed in the present application will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited to the embodiments described below. Furthermore, it should be noted that the drawings are schematic, and the dimensional relationship of each element, the ratio of each element, etc. may differ from reality. Furthermore, drawings may include portions with different dimensional relationships and ratios.

Conventionally, single-wafer processing in which substrates such as semiconductor wafers (hereinafter also referred to as wafers) are processed one by one is performed while rotating the substrate while holding it in a substrate holder. Therefore, if the substrate is processed while the substrate is not being held sufficiently, there is a risk that the substrate may not be processed sufficiently or problems may occur, such as large amounts of processing liquid being splashed on the inner wall of the chamber or the like.

Factors that may cause such deterioration of the holding condition include, for example, defective parts or poor assembly of the holding clamp or pin, deterioration due to wear or thermal deformation of the holding clamp or pin, and incorrect centering adjustment of the transport arm position.

Therefore, a technique is known in which the held state of the substrate is detected by capturing an image of the held substrate using an imaging means and comparing the captured image with a reference image. On the other hand, this conventional technique leaves room for further improvement in terms of accurately detecting the holding state of the substrate.

Therefore, it is hoped that a technology that can overcome the above-mentioned problems and accurately detect the holding state of the substrate will be realized.

<Summary of substrate processing system>
First, a schematic configuration of a substrate processing system 1 according to an embodiment will be described with reference to FIG. FIG. 1 is a diagram showing a schematic configuration of a substrate processing system 1 according to an embodiment. The substrate processing system 1 is an example of a substrate processing apparatus. In the following, in order to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are perpendicular to each other are defined, and the positive direction of the Z-axis is defined as a vertically upward direction.

As shown in FIG. 1, the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are provided adjacent to each other.

The loading/unloading station 2 includes a hoop placement section 11 and a transport section 12. A plurality of hoops H that horizontally accommodate a plurality of substrates, in the embodiment semiconductor wafers W (hereinafter referred to as wafers W), are placed on the hoop mounting section 11 .

The transport section 12 is provided adjacent to the hoop mounting section 11 and includes a substrate transport device 13 and a transfer section 14 inside. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 is capable of horizontal and vertical movement and rotation about a vertical axis, and uses a wafer holding mechanism to transfer the wafer W between the hoop H and the transfer section 14. conduct.

The processing station 3 is provided adjacent to the transport section 12. The processing station 3 includes a transport section 15 and a plurality of processing units 16. The plurality of processing units 16 are arranged side by side on both sides of the transport section 15 .

The transport section 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 is capable of horizontal and vertical movement and rotation about a vertical axis, and is capable of transferring wafers W between the transfer section 14 and the processing unit 16 using a wafer holding mechanism. I do.

The processing unit 16 performs predetermined substrate processing on the wafer W transported by the substrate transport device 17.

The substrate processing system 1 also includes a control device 4. The control device 4 is, for example, a computer, and includes a control section 18 and a storage section 19. The storage unit 19 stores programs that control various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing a program stored in the storage unit 19 .

Note that such a program may be one that has been recorded on a computer-readable storage medium, and may be one that is installed in the storage unit 19 of the control device 4 from the storage medium. Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnetic optical disks (MO), and memory cards.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading/unloading station 2 takes out a wafer W from the hoop H placed on the hoop placement section 11, and receives the taken out wafer W. Place it on Watabe 14. The wafer W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transport device 17 of the processing station 3 and carried into the processing unit 16.

The wafer W carried into the processing unit 16 is processed by the processing unit 16, and then carried out from the processing unit 16 by the substrate transport device 17 and placed on the transfer section 14. Then, the processed wafer W placed on the transfer section 14 is returned to the hoop H of the hoop placement section 11 by the substrate transfer device 13.

<Processing unit configuration>
Next, the configuration of the processing unit 16 according to the embodiment will be described with reference to FIG. 2. FIG. 2 is a schematic diagram showing an example of a specific configuration of the processing unit 16. As shown in FIG. 2, the processing unit 16 includes a chamber 20, a substrate processing section 30, a liquid supply section 40, a collection cup 50, an optical sensor 60, and an imaging device 70.

The chamber 20 accommodates a substrate processing section 30, a liquid supply section 40, a collection cup 50, an optical sensor 60, and an imaging device 70. A fan filter unit (FFU) 21 is provided on the ceiling of the chamber 20 . FFU 21 forms a downflow within chamber 20 .

The substrate processing section 30 includes a substrate holding section 31, a support section 32, and a driving section 33, and performs a given substrate processing on the mounted wafer W. The substrate holding section 31 holds the wafer W horizontally. The support column 32 is a member extending in the vertical direction, has a base end rotatably supported by a drive unit 33, and a distal end horizontally supports the substrate holding unit 31. The drive section 33 rotates the support section 32 around a vertical axis.

The substrate processing unit 30 rotates the substrate holding unit 31 supported by the support unit 32 by rotating the support unit 32 using the drive unit 33, thereby rotating the wafer W held by the substrate holding unit 31. Rotate.

A holding member 31a that holds the wafer W from the side is provided on the upper surface of the substrate holding section 31 included in the substrate processing section 30. The wafer W is held horizontally by the holding member 31a while being slightly spaced apart from the upper surface of the substrate holding section 31. Note that the wafer W is held by the substrate holder 31 with the surface on which substrate processing is performed facing upward.

Note that the substrate holding unit 31 is not limited to holding the substrate by the holding member 31a, and may hold the wafer W horizontally by suctioning the lower surface of the wafer W, for example. Furthermore, the substrate holding section 31 may be an electrostatic chuck or the like.

The liquid supply unit 40 supplies processing fluid to the wafer W. The liquid supply section 40 includes

nozzles

41a and 41b, an arm 42 that horizontally supports the

nozzles

41a and 41b, and a turning and lifting mechanism 43 that turns and raises and lowers the arm 42.

The nozzle 41a is connected to a processing liquid supply source 46a via a valve 44a and a flow rate regulator 45a. The processing liquid supply source 46a is a tank that stores processing liquid. Such a treatment liquid is used, for example, for liquid treatment of the wafer W (eg, etching treatment, cleaning treatment, etc.).

The nozzle 41b is connected to a DIW supply source 46b via a valve 44b and a flow regulator 45b. The DIW supply source 46b is, for example, a tank that stores DIW (DeIonized Water). Such DIW is used for rinsing the wafer W, for example.

Although the example in FIG. 2 shows an example in which the liquid supply unit 40 supplies the processing liquid and the rinsing liquid (DIW) to the wafer W, the present disclosure is not limited to such an example, and other chemical liquids may be supplied to the wafer W. It may be configured to do so.

The collection cup 50 is arranged to surround the substrate holding part 31 and collects the processing liquid scattered from the wafer W by the rotation of the substrate holding part 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged to the outside of the processing unit 16 from the drain port 51. Furthermore, an exhaust port 52 is formed at the bottom of the collection cup 50 to discharge the gas supplied from the FFU 21 to the outside of the processing unit 16.

The optical sensor 60 irradiates light onto the rotating wafer W held by the substrate holder 31 and receives reflected light from the wafer W. The optical sensor 60 is arranged, for example, above the peripheral edge of the wafer W, and irradiates the peripheral edge of the wafer W with light vertically downward. The optical sensor 60 receives light reflected from the peripheral edge of the wafer W, and detects the intensity of this reflected light.

The imaging device 70 is disposed above the wafer W, for example, and images the state of the wafer W being processed by the processing fluid from the liquid supply unit 40 while being held by the substrate holding unit 31.

<Details of detection processing>
Next, details of the detection processing according to the embodiment will be explained with reference to FIGS. 3 to 6. FIG. 3 is a block diagram showing an example of the configuration of the control device 4 according to the embodiment. As shown in FIG. 3, the control device 4 includes a control section 18 and a storage section 19.

Furthermore, the above-described substrate processing section 30, liquid supply section 40, optical sensor 60, and imaging device 70 are connected to the control device 4. In addition to the functional units shown in FIG. 3, the control device 4 may include various functional units included in known computers, such as various input devices and audio output devices.

The storage unit 19 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk. The storage unit 19 includes a reference period variation data storage unit 19a, a captured image storage unit 19b, and a difference data storage unit 19c. Details of these storage units will be described later. Furthermore, the storage unit 19 stores information used for various processes in the control unit 18.

The control unit 18 is realized by, for example, a CPU, an MPU (Micro Processing Unit), a GPU (Graphics Processing Unit), etc., executing a program stored in the storage unit 19 using the RAM as a work area.

Furthermore, the control unit 18 may be realized by an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array).

The control unit 18 includes a creation unit 18a, a calculation unit 18b, a determination unit 18c, an abnormality handling unit 18d, and a prediction unit 18e, and realizes or executes the functions and actions of the control processing described below. Note that the internal configuration of the control unit 18 is not limited to the configuration shown in FIG. 3, and may be any other configuration as long as it performs the control processing described below.

The creation unit 18a irradiates light from the optical sensor 60 to the rotating wafer W held by the substrate holding unit 31, obtains changes in the intensity of reflected light during the period when the wafer W is rotating, and creates periodic fluctuation data. . Details of such periodic fluctuation data will be explained with reference to FIG. 4.

FIG. 4 is a diagram showing an example of periodic fluctuation data according to the embodiment. As shown in FIG. 4, the periodic fluctuation data according to the embodiment is a curve showing the transition of the intensity of reflected light over the entire circumference of the wafer W (that is, the rotation angle is in the range of 0 (deg) to 360 (deg)). It is expressed as

Further, in FIG. 4, actual values measured using a gauge, which is conventionally performed to confirm the holding state of the wafer W, are also shown. The actual value measured with such a gauge is obtained by applying the gauge to the peripheral edge of the wafer W held in the substrate holder 31 and measuring the position in the height direction at the peripheral edge. This is data that measures changes in position.

Conventionally, the quality of the holding state of the wafer W is determined based on the actual value measured with this gauge. For example, if the variation in the height position of the peripheral edge of the wafer W is not within a given range, it can be determined that the wafer W is held poorly.

On the other hand, with this method, it is necessary to open the processing unit 16 and work by applying a gauge to the wafer W inside, which is very time-consuming and requires measurement while the wafer W is being processed. I can't.

Therefore, in the embodiment, the optical sensor 60 installed inside the processing unit 16 is used to create periodic fluctuation data indicating changes in the intensity of reflected light over one circumference of the wafer W. As shown in FIG. 4, there is a high correlation between the actual values measured by the gauge in the conventional technology and the periodic fluctuation data of the present disclosure.

Furthermore, in the present disclosure, by using such periodic fluctuation data, minute deflections of the wafer W caused by deterioration of the holding state can be detected with high precision throughout one rotation of the wafer W. This is because, at a portion where the wafer W is bent and tilted, even if the amount of bending is small, the amount of light that is reflected vertically upward from the wafer W and enters the optical sensor 60 is reduced.

Note that, as shown in FIG. 4, there are three regions where the values are low in the periodic fluctuation data and the actual measured values with the gauge, but this is because the wafer W is supported by the three holding members 31a as shown in FIG. This is due to the three depressions Wa formed in the wafer W during the process. FIG. 5 is a diagram for explaining the state of the wafer W held by the substrate holding section 31 according to the embodiment.

In this way, in the embodiment, it is possible to create periodic variation data that includes information about the presence or absence of a bend in the wafer W (in this case, the depression Wa) and the state of the bend, including the position information of the bend.

In the embodiment, the creation unit 18a controls the substrate processing unit 30 and rotates the wafer W in a range of 1 (rpm) to 100 (rpm), while observing the change in the intensity of reflected light throughout one rotation of the wafer W. is preferably measured by the optical sensor 60. This makes it possible to reduce the influence of deflection of the wafer W caused by excessively increasing the number of rotations, and thus it is possible to create highly accurate periodic variation data.

Returning to the explanation of FIG. 3. The calculation unit 18b calculates the difference between the reference period fluctuation data stored in advance and the period fluctuation data created by the creation unit 18a. This reference period fluctuation data is, for example, period fluctuation data created by the creation section 18a immediately after returning the substrate holding section 31 to a normal state (for example, immediately after replacing the substrate holding section 31 with a new one).

That is, the difference between the reference periodic fluctuation data and the periodic fluctuation data calculated by the calculating section 18b is the difference in the holding state between the substrate holding section 31 in a normal state and the substrate holding section 31 at the time when the periodic fluctuation data was created. It shows. The reference period variation data is stored in the reference period variation data storage section 19a of the storage section 19, for example.

The determination unit 18c determines whether the holding state of the wafer W held by the substrate holding unit 31 is normal or not based on the periodic fluctuation data created by the creation unit 18a. For example, the determination unit 18c determines that the holding state of the wafer W is normal when the difference between the reference periodic variation data and the periodic variation data is within a given range.

On the other hand, if the difference between the reference cycle variation data and the cycle variation data is not within the given range, the determination unit 18c determines that the holding state of the wafer W is not normal.

As described so far, in the embodiment, the holding state of the wafer W can be detected with high accuracy by determining whether the holding state of the wafer W is good or bad based on the periodic fluctuation data.

Furthermore, in the embodiment, the difference in the holding state between the substrate holding section 31 in a normal state and the substrate holding section 31 at the time of measurement is evaluated by the difference between the reference periodic fluctuation data and the periodic fluctuation data, so that a plurality of processes can be performed. The difference between devices for each unit 16 can be included in the determination of whether the holding state is good or bad.

Therefore, according to the embodiment, the holding state of the wafer W can be detected with higher accuracy.

Further, in the embodiment, periodic fluctuation data created before substrate processing is performed on a certain wafer W is used as reference periodic fluctuation data when the calculation unit 18b performs calculation processing after substrate processing is performed on the same wafer W. It's okay.

As a result, deterioration in the holding state that occurs during a given substrate process (for example, a process involving a rapid temperature change) can be detected immediately after such process. Therefore, according to the embodiment, the holding state of the wafer W can be detected with higher accuracy.

Note that in this case, it is preferable that periodic variation data created for a certain wafer W before substrate processing is stored in the standard periodic variation data storage section 19a of the storage section 19 as reference periodic variation data for the wafer W.

The abnormality handling unit 18d executes various abnormality handling processes when the determining unit 18c determines that the holding state of the wafer W is not normal.

The abnormality handling process according to the embodiment is, for example, notifying the operator that the holding state of the wafer W in the processing unit 16 is not normal. This allows the operator to recognize the abnormal state of the substrate holding section 31.

Furthermore, the abnormality handling process according to the embodiment may include, for example, once returning the wafer W to the substrate transport device 17 (see FIG. 1) and holding it again in the substrate holding unit 31. Thereby, even if the abnormality in the holding state is temporary, the holding state of the target wafer W can be returned to normal.

Furthermore, when the determination unit 18c determines that the holding state of the wafer W after substrate processing is not normal, the abnormality handling unit 18d may save the captured image of the wafer W during processing. Such a captured image is, for example, a moving image, and is stored in the captured image storage section 19b of the storage section 19.

In this case, the determining unit 18c uses the periodic fluctuation data created before performing substrate processing on the target wafer W to be used as a reference period when the calculating unit 18b performs calculation processing after performing substrate processing on the same wafer W. It is good to use it as fluctuation data.

Further, the abnormality handling unit 18d may associate the captured image during substrate processing stored in the captured image storage unit 19b as described above with log information indicating that an abnormal state has been reported for the same wafer W.

In this way, by storing the captured image during processing in the storage unit 19 for the wafer W whose holding state is determined to be abnormal, the operator can check the details of the malfunction again at a later date using the stored captured image. Can be done. Furthermore, by associating captured images during substrate processing with log information indicating that an abnormal condition has been reported, the operator can easily check captured images during abnormal conditions.

In addition to the above calculation process, the calculation unit 18b calculates the difference between the reference period fluctuation data and the period fluctuation data for each of the plurality of wafers W successively carried into the processing unit 16, and calculates the maximum of the difference. Calculate the value as difference data.

In this case, the periodic fluctuation data created by the creation section 18a immediately after returning the substrate holding section 31 to a normal state (for example, immediately after replacing the board holding section 31 with a new one) is used as the reference periodic fluctuation data. It will be done. Then, this difference data is stored in the difference data storage section 19c of the storage section 19, and plotted as shown in FIG. 6, for example.

FIG. 6 is a diagram showing an example of difference data according to the embodiment. As shown in FIG. 6, in the difference data according to the embodiment, for example, the horizontal axis represents time (or the number of processed wafers W), and the vertical axis represents the maximum value of the difference between the reference periodic fluctuation data and the periodic fluctuation data. Data of a plurality of wafers W is plotted in a certain XY space.

The prediction unit 18e predicts the holding state of the substrate holding unit 31 based on the temporal change of the difference data as shown in FIG. The prediction unit 18e predicts the holding state of the substrate holding unit 31 by, for example, linear regression analysis.

For example, in the example of FIG. 6, in the period up to time T0, the time course of the maximum value of the difference regresses to a straight line where the maximum value of the difference=0. That is, in the example of FIG. 6, there is no noticeable change in the holding state of the substrate holding part 31 compared to immediately after returning the substrate holding part 31 to the normal state until time T0, and a good holding state is maintained. It is estimated that there are.

On the other hand, after time T0, the time course of the maximum value of the difference regresses to a straight line L having an inclination. Therefore, the prediction unit 18e predicts that the holding state becomes abnormal at time T2, which is the intersection of the straight line L and the upper limit (or lower limit) of the maximum value of the difference that is considered to maintain the holding state well. , is predicted at time T1.

In this way, in the embodiment, the holding state of the substrate holding section 31 can be predicted with high accuracy based on the temporal change of the difference data. Therefore, according to the embodiment, based on the obtained prediction, the operator can prepare parts such as the board holding part 31 in advance and plan maintenance.

Note that in the above embodiment, the difference between the reference periodic variation data and the periodic variation data is calculated for each of the plurality of wafers W successively carried into the processing unit 16, and the maximum value of the difference is calculated as the difference data. Although examples are shown, the present disclosure is not limited to such examples.

For example, in the present disclosure, the difference between the reference period fluctuation data and the period fluctuation data is calculated for each of the plurality of wafers W that are successively carried into the processing unit 16, and the average value of the differences is calculated as the difference data. good.

Then, the prediction unit 18e may predict the holding state of the substrate holding unit 31 based on the change in the difference data over time. This also makes it possible to accurately predict the holding state of the substrate holder 31.

Further, although the example of FIG. 6 shows an example in which the prediction unit 18e predicts the holding state of the substrate holding unit 31 by linear regression analysis, the present disclosure is not limited to such an example, and the prediction unit 18e predicts the holding state of the substrate holding unit 31 by using various analysis methods. The holding state of the holding section 31 may be predicted.

The substrate processing apparatus (substrate processing system 1) according to the embodiment includes a substrate holding section 31, an optical sensor 60, and a control section 18. The substrate holding unit 31 holds and rotates a substrate (wafer W) to be processed. The optical sensor 60 irradiates light onto a rotating substrate (wafer W) held by the substrate holder 31 and receives reflected light. The control section 18 controls each section. Further, the control unit 18 includes a creation unit 18a and a determination unit 18c. The creation unit 18a irradiates the rotating substrate (wafer W) held by the substrate holding unit 31 with light from the optical sensor 60, and obtains changes in the intensity of reflected light during the period when the substrate (wafer W) is rotating. Create periodic fluctuation data. The determining unit 18c determines whether the holding state of the substrate (wafer W) held by the substrate holding unit 31 is normal based on the periodic fluctuation data. Thereby, the holding state of the wafer W can be detected with high accuracy.

Further, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the control unit 18 includes a calculation unit 18b that calculates the difference between the reference period fluctuation data stored in advance and the period fluctuation data created by the creation unit 18a. , further has. Further, the determination unit 18c determines that the holding state of the substrate (wafer W) is normal when the difference is within a given range, and when the difference is not within the given range, the determination unit 18c determines that the holding state of the substrate (wafer W) is normal. It is determined that the holding state of the wafer W) is not normal. Thereby, the holding state of the wafer W can be detected with higher accuracy.

Further, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the reference period fluctuation data is set before the substrate (wafer W) held in the substrate holding part 31 is carried in. This is periodic fluctuation data created for another board. Thereby, reference period fluctuation data when the substrate holder 31 is normal can be obtained.

Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the creation unit 18a creates individual periodic fluctuation data each time a plurality of substrates (wafers W) are carried in one by one. Further, the calculation unit 18b calculates the maximum value of the difference among the plurality of substrates (wafers W) as difference data. Furthermore, the control unit 18 further includes a prediction unit 18e that predicts the holding state of the substrate holding unit 31 based on the change in the difference data over time. Thereby, the holding state of the substrate holding section 31 can be predicted with high accuracy.

Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the creation unit 18a creates individual periodic fluctuation data each time a plurality of substrates (wafers W) are carried in one by one. Further, the calculation unit 18b calculates the average value of the differences among the plurality of substrates (wafers W) as difference data. Furthermore, the control unit 18 further includes a prediction unit 18e that predicts the holding state of the substrate holding unit 31 based on the change in the difference data over time. Thereby, the holding state of the substrate holding section 31 can be predicted with high accuracy.

Further, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the control unit 18 executes an abnormality response process when the determination unit 18c determines that the holding state of the substrate (wafer W) is not normal. It further includes a corresponding portion 18d. This allows the operator to recognize the abnormal state of the substrate holding section 31.

Further, the substrate processing apparatus (substrate processing system 1) according to the embodiment further includes an imaging device 70 that images the substrate (wafer W) held by the substrate holding section 31. Further, the creation unit 18a creates periodic variation data of the substrate (wafer W) after processing. Furthermore, when the determination unit 18c determines that the holding state of the processed substrate (wafer W) is not normal, the abnormality handling unit 18d stores the captured image of the substrate during processing. This allows the operator to confirm the details of the malfunction again at a later date using the stored captured image.

<Control processing procedure>
Next, the procedure of the control processing according to the embodiment will be explained with reference to FIGS. 7 to 9. FIG. 7 is a flowchart illustrating an example of a control processing procedure executed by the substrate processing system 1 according to the embodiment.

In the control process according to the embodiment, first, the control section 18 holds the wafer W carried into the processing unit 16 with the substrate holding section 31 (step S101). Then, the control unit 18 performs a holding abnormality detection process to detect an abnormality in the holding state of the wafer W held by the substrate holding unit 31 (step S102). Details of this holding abnormality detection process will be described later.

Next, the control unit 18 performs a temporal change detection process to detect a temporal change in the holding state of the wafer W held by the substrate holding unit 31 (step S103). Details of this temporal change detection processing will be described later.

Next, the control unit 18 supplies a processing liquid and a rinsing liquid to the wafer W while rotating the wafer W held by the substrate holding unit 31, and performs a given process on the wafer W (step S104).

In the process of step S104, for example, the control unit 18 controls the substrate processing unit 30 and the like to rotate the wafer W at a given rotation speed, and controls the liquid supply unit 40 and the like to apply liquid onto the wafer W. Supply the processing liquid at a given supply rate.

Furthermore, the control unit 18 performs a DIW rinsing process on the wafer W that has been subjected to the liquid treatment using the treatment liquid. Further, the control unit 18 performs a drying process such as spin drying on the wafer W after the rinsing process.

Finally, the control unit 18 performs a holding abnormality detection process to detect an abnormality in the holding state of the wafer W held by the substrate holding unit 31 (step S105), and ends the series of control processes.

FIG. 8 is a flowchart illustrating an example of the procedure of the holding abnormality detection process executed by the substrate processing system 1 according to the embodiment.

In this holding abnormality detection process, first, the control unit 18 rotates the wafer W at a predetermined rotation speed (for example, in the range of 1 (rpm) to 100 (rpm)) and illuminates the peripheral portion of the wafer W. The sensor 60 measures it (step S201).

Next, the control unit 18 creates periodic fluctuation data of the wafer W based on the measurement results by the optical sensor 60 (step S202). Then, the control unit 18 calculates the difference between the reference cycle variation data stored in advance and the cycle variation data of the wafer W (step S203).

Next, the control unit 18 determines whether the calculated difference is within a given range (step S204). If the difference is within the given range (step S204, Yes), the control unit 18 considers that the holding state of the wafer W is normal, and ends the series of holding abnormality detection processing.

On the other hand, if the difference is not within the given range (step S204, No), the control unit 18 considers that the holding state of the wafer W is not normal, and executes various abnormality handling processes (step S205).

Next, the control unit 18 determines whether the wafer W whose holding state is considered to be abnormal has been subjected to a given substrate treatment (step S206). Then, if the target wafer W has undergone a given substrate processing (step S206, Yes), the control unit 18 stores the captured image of the substrate processing of the wafer W performed immediately before in the storage unit 19. It is saved (step S207), and the series of retention abnormality detection processing is ended.

On the other hand, if the target wafer W has not been subjected to the given substrate processing (step S206, No), the series of holding abnormality detection processing ends.

FIG. 9 is a flowchart illustrating an example of the procedure of the temporal change detection process executed by the substrate processing system 1 according to the embodiment.

In this temporal change detection process, first, the control unit 18 calculates the maximum value or the average value of the difference between the pre-stored reference periodic variation data and the periodic variation data created in the above-mentioned temporal change detection process, and converts it into difference data. (Step S301).

Next, the control unit 18 plots the maximum value or average value of the difference between the reference periodic fluctuation data and the periodic fluctuation data in the XY space as shown in FIG. 6 (step S302). Then, the control unit 18 performs a linear regression analysis of the temporal change in the difference data in the XY space in which the maximum value or average value of the differences among the plurality of wafers W is plotted (step S303).

Next, the control unit 18 determines whether there is a significant difference in the slopes of the straight lines created by linear regression analysis (step S304). If it is determined that there is a significant difference in the slope of the straight line created by the linear regression analysis (step S304, Yes), the control unit 18 predicts the timing at which the maximum value or average value of the difference deviates from the allowable range. (Step S305).

Further, the control unit 18 notifies the worker of the predicted departure timing (step S306), and ends the series of temporal change detection processing. On the other hand, if it is determined that there is no significant difference in the slope of the straight line created by the linear regression analysis (step S304, No), the series of temporal change detection processing is ended.

The substrate processing method according to the embodiment includes a holding step (step S101), a creating step (step S202), and a determining step (step S204). In the holding step (step S101), the substrate (wafer W) is held by the substrate holding section 31. In the step of creating (step S202), periodic variation data is created at least one of before and after processing the substrate (wafer W). Such periodic fluctuation data is based on the period during which a rotating substrate (wafer W) held by the substrate holder 31 is irradiated with light from the optical sensor 60 that irradiates light and receives reflected light, and the substrate (wafer W) is rotating. It is created by acquiring changes in the intensity of reflected light. In the determining step (step S204), it is determined whether the holding state of the substrate (wafer W) held by the substrate holding unit 31 is normal based on the periodic fluctuation data. Thereby, the holding state of the wafer W can be detected with high accuracy.

Furthermore, the substrate processing method according to the embodiment further includes a step of calculating (step S203). The calculating step (step S203) calculates the difference between the reference period fluctuation data stored in advance and the period fluctuation data created in the creating step (step S202). Further, in the determining step (step S204), if the difference is within a given range, it is determined that the holding state of the substrate (wafer W) is normal, and if the difference is not within the given range, it is determined that the holding state of the substrate (wafer W) is normal. It is determined that the holding state of the substrate (wafer W) is not normal. Thereby, the holding state of the wafer W can be detected with higher accuracy.

Further, in the substrate processing method according to the embodiment, the reference period fluctuation data is created for another substrate held in the substrate holding unit 31 before the substrate (wafer W) held in the substrate holding unit 31 is carried in. This is the periodic fluctuation data. Thereby, reference period fluctuation data when the substrate holder 31 is normal can be obtained.

Furthermore, in the substrate processing method according to the embodiment, the step of creating (step S202) creates individual periodic fluctuation data each time a plurality of substrates (wafers W) are carried in one by one. Further, in the calculating step (step S203), the average value of the differences among a plurality of substrates (wafers W) is calculated as difference data. Further, the substrate processing method according to the embodiment further includes a step of predicting the holding state of the substrate holding section 31 based on the temporal change of the difference data (step S305). Thereby, the holding state of the substrate holding section 31 can be predicted with high accuracy.

Further, the substrate processing method according to the embodiment further includes a step (step S205) of performing abnormality handling processing when the determining step (step S204) determines that the holding state of the substrate (wafer W) is not normal. include. This allows the operator to recognize the abnormal state of the substrate holding section 31.

Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments, and various changes can be made without departing from the spirit thereof. For example, in the above embodiment, an example is shown in which reference period fluctuation data, captured images, difference data, etc. are stored in the storage unit 19 provided in the control device 4 of the substrate processing system 1, but the present disclosure does not apply to such an example. Not limited. For example, in the present disclosure, reference period variation data, captured images, difference data, etc. may be stored in another storage device connected to the control device 4 via a network.

The embodiments disclosed this time should be considered to be illustrative in all respects and not restrictive. Indeed, the embodiments described above may be implemented in various forms. Moreover, the above-described embodiments may be omitted, replaced, or modified in various forms without departing from the scope and spirit of the appended claims.

W wafer (an example of a substrate)
1 Substrate processing system (an example of substrate processing equipment)
4 Control device 16 Processing unit 18 Control section 18a Creation section 18b Calculation section 18c Judgment section 18d Abnormality handling section 18e Prediction section 19 Storage section 19a Reference period variation data storage section 19b Captured image storage section 19c Difference data storage section 31 Substrate holding section 60 Optical sensor 70 Imaging device

Claims

a substrate holder that holds and rotates the substrate to be processed;
an optical sensor that irradiates the rotating substrate held by the substrate holder with light and receives reflected light;
A control unit that controls each part,
Equipped with
The control unit includes:
a creation unit that irradiates light from the optical sensor to the rotating substrate held by the substrate holding unit, obtains intensity changes of reflected light during a period when the substrate is rotating, and creates periodic fluctuation data;
a determination unit that determines whether the holding state of the substrate held by the substrate holding unit is normal based on the periodic fluctuation data;
A substrate processing apparatus having:
The control unit further includes a calculation unit that calculates a difference between reference period fluctuation data stored in advance and the period fluctuation data created by the creation unit,
The determination unit determines that the holding state of the substrate is normal when the difference is within a given range, and determines that the holding state of the substrate is normal when the difference is not within the given range. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is determined to be abnormal.
The reference period variation data is period variation data created for another substrate held by the substrate holder before the substrate held by the substrate holder is carried in. Substrate processing equipment.
The creation unit creates individual periodic fluctuation data each time a plurality of boards are brought in one by one,
The calculation unit calculates the maximum value of the difference among the plurality of substrates as difference data,
The control unit includes:
The substrate processing apparatus according to claim 2 , further comprising a prediction unit that predicts a holding state of the substrate holding unit based on a change in the difference data over time.
The creation unit creates individual periodic fluctuation data each time a plurality of boards are brought in one by one,
The calculation unit calculates an average value of the differences among the plurality of substrates as difference data,
The control unit includes:
The substrate processing apparatus according to claim 2 , further comprising a prediction unit that predicts a holding state of the substrate holding unit based on a change in the difference data over time.
The control unit includes:
The substrate processing apparatus according to any one of claims 1 to 3, further comprising an abnormality handling unit that executes abnormality handling processing when the determination unit determines that the holding state of the substrate is not normal.
further comprising an imaging device that images the substrate held by the substrate holder,
The creation unit creates the periodic fluctuation data of the substrate after processing,
The abnormality handling department is
The substrate processing apparatus according to claim 6, wherein when the determination unit determines that the holding state of the substrate after processing is not normal, a captured image of the substrate during processing is saved.
holding the substrate by the substrate holding section;
At least one of before and after processing the substrate, a light sensor that irradiates light and receives reflected light irradiates the rotating substrate held by the substrate holder, and the substrate rotates. a step of obtaining periodic fluctuation data by acquiring changes in the intensity of reflected light over a period of time;
determining whether or not the holding state of the substrate held by the substrate holding unit is normal based on the periodic fluctuation data;
Substrate processing methods including.
further comprising a step of calculating a difference between pre-stored reference period fluctuation data and the period fluctuation data created in the creating step,
In the determining step, if the difference is within a given range, it is determined that the holding state of the substrate is normal, and if the difference is not within the given range, the holding state of the substrate is determined to be normal. The substrate processing method according to claim 8, wherein the condition is determined to be abnormal.
The reference period variation data is period variation data created for another substrate held by the substrate holder before the substrate held by the substrate holder is carried in. Substrate processing method.
The creating step creates individual periodic variation data each time a plurality of boards are brought in one by one,
The step of calculating calculates an average value of the differences among the plurality of substrates as difference data,
The substrate processing method according to claim 9 or 10, further comprising the step of predicting a holding state of the substrate holder based on a change in the difference data over time.
11. The substrate processing method according to claim 9, further comprising the step of executing abnormality handling processing when the determining step determines that the holding state of the substrate is not normal.