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WO2023032191A1 - Plating method and plating apparatus - Google Patents

Plating method and plating apparatus Download PDF

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Publication number
WO2023032191A1
WO2023032191A1 PCT/JP2021/032624 JP2021032624W WO2023032191A1 WO 2023032191 A1 WO2023032191 A1 WO 2023032191A1 JP 2021032624 W JP2021032624 W JP 2021032624W WO 2023032191 A1 WO2023032191 A1 WO 2023032191A1
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WO
WIPO (PCT)
Prior art keywords
plating
substrate holder
substrate
plating solution
height
Prior art date
Application number
PCT/JP2021/032624
Other languages
French (fr)
Japanese (ja)
Inventor
一仁 辻
Original Assignee
株式会社荏原製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社荏原製作所 filed Critical 株式会社荏原製作所
Priority to JP2021568812A priority Critical patent/JPWO2023032191A1/ja
Priority to PCT/JP2021/032624 priority patent/WO2023032191A1/en
Publication of WO2023032191A1 publication Critical patent/WO2023032191A1/en

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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06Suspending or supporting devices for articles to be coated
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors

Definitions

  • This application relates to a plating method and a plating apparatus.
  • a cup-type electroplating device is known as an example of a plating device.
  • a cup-type electroplating apparatus immerses a substrate (for example, a semiconductor wafer) held in a substrate holder with the surface to be plated facing downward in a plating solution, and applies a voltage between the substrate and the anode to A conductive film is deposited on the surface of the After plating, the substrate holder holding the substrate is pulled up from the plating solution and transferred to a subsequent processing module such as a cleaning module.
  • One of the purposes of the present invention is to reduce the amount of plating solution carried out from the plating bath while reducing the time required to pull up the substrate holder.
  • a method of plating a substrate comprising: plating the substrate held by a substrate holder in a plating solution in a plating bath; a step of tilting the substrate holder so that the substrate holder is tilted at a predetermined angle from the horizontal; and with the substrate holder being tilted, at least part of the substrate holder is exposed from the liquid surface of the plating solution in the plating bath.
  • FIG. 1 is a perspective view showing the overall configuration of a plating apparatus of this embodiment;
  • FIG. 1 is a plan view showing the overall configuration of a plating apparatus of this embodiment;
  • FIG. 1 is a longitudinal sectional view schematically showing the configuration of a plating module of this embodiment;
  • FIG. 10 is a vertical cross-sectional view of the plating module showing a process of spraying pure water onto the substrate holder after being pulled up; It is an example of a flow chart of a plating method including a process of pulling up a substrate holder.
  • FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of this embodiment.
  • FIG. 2 is a plan view showing the overall configuration of the plating apparatus of this embodiment.
  • the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, and a transfer device. 700 and a control module 800 .
  • the load port 100 is a module for loading substrates stored in cassettes such as FOUPs (not shown) into the plating apparatus 1000 and for unloading substrates from the plating apparatus 1000 to cassettes. Although four load ports 100 are arranged horizontally in this embodiment, the number and arrangement of the load ports 100 are arbitrary.
  • the transport robot 110 is a robot for transporting substrates, and is configured to transfer substrates among the load port 100 , the aligner 120 and the transport device 700 . When transferring substrates between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer the substrates via a temporary placement table (not shown).
  • the aligner 120 is a module for aligning the positions of orientation flats, notches, etc. of the substrate in a predetermined direction. Although two aligners 120 are arranged horizontally in this embodiment, the number and arrangement of the aligners 120 are arbitrary.
  • the pre-wet module 200 replaces the air inside the pattern formed on the substrate surface with the treatment liquid by wetting the surface to be plated of the substrate before the plating treatment with a treatment liquid such as pure water or degassed water.
  • the pre-wet module 200 is configured to perform a pre-wet process that facilitates the supply of the plating solution to the inside of the pattern by replacing the treatment solution inside the pattern with the plating solution during plating. Although two pre-wet modules 200 are arranged vertically in this embodiment, the number and arrangement of the pre-wet modules 200 are arbitrary.
  • the presoak module 300 for example, an oxide film having a large electric resistance existing on the surface of a seed layer formed on the surface to be plated of the substrate before plating is etched away with a processing liquid such as sulfuric acid or hydrochloric acid, and the surface of the plating substrate is cleaned.
  • a processing liquid such as sulfuric acid or hydrochloric acid
  • it is configured to perform a pre-soak process for activation.
  • two presoak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the presoak modules 300 are arbitrary.
  • the plating module 400 applies plating to the substrate.
  • the cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove the plating solution and the like remaining on the substrate after the plating process.
  • the spin rinse dryer 600 is a module for drying the substrate after cleaning by rotating it at high speed. Although two spin rinse dryers are arranged vertically in this embodiment, the number and arrangement of the spin rinse dryers are arbitrary.
  • the transport device 700 is a device for transporting substrates between a plurality of modules within the plating apparatus 1000 .
  • Control module 800 is configured to control a plurality of modules of plating apparatus 1000 and may comprise, for example, a general purpose or dedicated computer with input/output interfaces to an operator.
  • a substrate stored in a cassette is loaded into the load port 100 .
  • the transport robot 110 takes out the substrate from the cassette of the load port 100 and transports the substrate to the aligner 120 .
  • the aligner 120 aligns orientation flats, notches, etc. of the substrate in a predetermined direction.
  • the transport robot 110 transfers the substrate aligned by the aligner 120 to the transport device 700 .
  • the transport device 700 transports the substrate received from the transport robot 110 to the pre-wet module 200 .
  • the pre-wet module 200 pre-wets the substrate.
  • the transport device 700 transports the pre-wet processed substrate to the pre-soak module 300 .
  • the presoak module 300 applies a presoak treatment to the substrate.
  • the transport device 700 transports the presoaked substrate to the plating module 400 .
  • the plating module 400 applies plating to the substrate.
  • the transport device 700 transports the plated substrate to the cleaning module 500 .
  • the cleaning module 500 performs a cleaning process on the substrate.
  • the transport device 700 transports the cleaned substrate to the spin rinse dryer 600 .
  • a spin rinse dryer 600 performs a drying process on the substrate.
  • the transport device 700 delivers the dried substrate to the transport robot 110 .
  • the transport robot 110 transports the substrate received from the transport device 700 to the cassette of the load port 100 . Finally, the cassette containing the substrates is unloaded from the load port 100 .
  • FIG. 3 is a longitudinal sectional view schematically showing the configuration of the plating module 400 of this embodiment.
  • the plating module 400 includes a plating bath 410 for containing a plating solution and an overflow bath 412 arranged around the plating bath 410 .
  • the overflow bath 412 collects the plating solution overflowing from the plating bath 410 .
  • the plating solution recovered in the overflow bath 412 is returned to the plating bath 410 through a circulation path (not shown) and reused.
  • the plating module 400 includes a membrane 420 that vertically separates the interior of the plating bath 410 .
  • the interior of the plating bath 410 is partitioned into a cathode area 422 and an anode area 424 by a membrane 420 .
  • Cathode region 422 and anode region 424 are each filled with a plating solution.
  • An anode 430 is provided on the bottom surface of the plating bath 410 in the anode area 424 .
  • a resistor 450 is disposed in the cathode region 422 so as to face the membrane 420 .
  • the resistor 450 is a member for uniformizing the plating process on the surface to be plated of the substrate Wf, and is composed of a plate-like member having a large number of holes.
  • the plating module 400 also includes a substrate holder 440 for holding the substrate Wf with the surface to be plated facing downward.
  • the substrate holder 440 includes power contacts for powering the substrate Wf from a power source (not shown).
  • the plating module 400 includes an elevating mechanism 442 for elevating the substrate holder 440 .
  • the lifting mechanism 442 can be implemented by a known mechanism such as a motor.
  • the plating module 400 lowers the substrate holder 440 using the elevating mechanism 442 to immerse the substrate Wf in the plating solution in the cathode region 422, and applies a voltage between the anode 430 and the substrate Wf to lift the substrate Wf. It is configured to apply plating to the surface to be plated.
  • the plating module 400 also includes a tilting mechanism 444 for tilting the substrate holder 440 .
  • the tilting mechanism 444 can be implemented by a known mechanism such as a mechanism called a tilting mechanism.
  • the plating module 400 includes a rotation mechanism 446 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual rotation axis extending vertically through the center of the surface to be plated.
  • the rotating mechanism 446 can be implemented by a known mechanism such as a motor.
  • the elevating mechanism 442 is operated in a state in which the surface to be plated of the substrate Wf held by the substrate holder 440 by the tilting mechanism 444 is tilted several degrees (for example, 5°) with respect to the horizontal plane (liquid surface of the plating solution). It is configured to raise the substrate holder 440 to lift the substrate Wf out of the plating solution. Further, the elevating mechanism 442 lowers the substrate holder 440 in a state in which the surface to be plated of the substrate Wf held by the substrate holder 440 is tilted several degrees with respect to the surface of the plating solution by the tilting mechanism 444, and the substrate Wf is immersed.
  • a horizontal plane is a plane parallel to the ground and can be defined as a plane defined by the surface or liquid level of the plating solution in the plating bath (when the surface/liquid level is in a flat state).
  • the first height H1 is the height when the substrate holder 440 rises and the entire surface of the substrate holder 440 is just exposed from the plating solution ("height when the entire surface of the substrate holder 440 is exposed from the plating solution. ”).
  • the second height H2 is an arbitrary height above the first height H1, for example, the height for loading/unloading the substrate Wf to/from the substrate holder 440 and/or the rinsing liquid for the substrate Wf. may be at a height for cleaning the substrate Wf by spraying.
  • H0 in FIG. 3 indicates the height of the substrate holder 440 (referred to as plating height) when the substrate Wf is plated in the plating solution.
  • the height of the substrate holder 440 is defined as the height of the center position of the substrate Wf, as shown in FIG. Note that the height of the substrate holder 440 may be the height of another portion of the substrate holder.
  • FIG. 4 shows experimental results of measuring the relationship between the substrate holder lifting time and the amount of dragout. This experimental result was obtained when a copper sulfate plating solution was used as the plating solution.
  • the horizontal axis indicates the lifting time (s, seconds) required for lifting to the second height H2
  • the vertical axis indicates the dragout amount (mL), which is the amount of the plating solution taken out.
  • a curve CA is a measurement result when the substrate holder 440 is lifted at a constant lifting speed.
  • a numerical value attached to each point on the curve CA indicates a constant pulling speed.
  • the point 50 mm/s is the measurement result when the substrate holder 440 is pulled up at a constant pulling speed of 50 mm/s, indicating that the pulling up time is about 2 s and the dragout amount is about 17.5 mL.
  • a point of 1 mm/s is a measurement result when the substrate holder 440 is pulled up at a constant pulling speed of 1 mm/s, and indicates that the pulling up time is about 108 s and the dragout amount is about 1.8 mL.
  • the substrate holder 440 is lifted at a constant lifting speed, if the lifting speed is increased, the amount of dragout cannot be sufficiently reduced. However, it can be seen that the pulling time is greatly increased.
  • Curve CB is measured when the substrate holder 440 is lifted to a first height H1 at a first speed V1 and then lifted to a second height at a second speed V2 (50 mm/s in this measurement). This is the result.
  • a numerical value attached to each point on the curve CB indicates the value of the first speed V1.
  • the point 10 mm/s is the measurement result when the first speed V1 is pulled up to the first height H1 at 10 mm/s and then the second speed V2 is pulled up to the second height H2 at 50 mm/s. , indicating that the pull-up time is about 4 s and the dragout volume is about 9.5 mL.
  • the time is approximately 35 s and the dragout volume is approximately 1.8 mL. That is, the substrate holder 440 is lifted up at the first speed V1 to the height H1 when the entire substrate holder 440 is exposed from the liquid surface, and then lifted up to the second height H2 at the second speed V2 (>V1). It can be seen that the pull-up time can be shortened while reducing the
  • the substrate holder 440 is pulled up at a low first speed V1 to a first height H1 when the entire surface of the substrate holder 440 is exposed from the surface of the plating solution (at the time of exposure). is accelerated to the second speed V2, it is possible to shorten the pull-up time while reducing the drag-out amount.
  • the first speed V1 is 10 mm/s or less. This is because if the first speed V1 is higher than 10 mm/s, the dragout amount cannot be sufficiently reduced, and the original pull-up time is short, so there is little need to further shorten the pull-up time. More preferably, the first speed V1 is 5 mm/s or less.
  • the first speed V1 is preferably 1 mm/s or more.
  • FIG. 5 shows experimental results of measuring the relationship between the substrate holder pull-up time and the amount of drag-out when the substrate holder is not rotated and when it is rotated. This experimental result was obtained when a copper sulfate plating solution was used as the plating solution.
  • the horizontal axis indicates the lifting time (s, seconds) required for lifting to the second height H2
  • the vertical axis indicates the dragout amount (mL), which is the amount of the plating solution taken out.
  • the curve C0 is obtained by lifting the substrate holder 440 at a first speed V1 (numerical values attached to each point on the curve C0) and a second speed V2 (50 mm/s) without rotating the substrate holder 440 (rotational speed 0 rpm).
  • V1 number of values attached to each point on the curve C0
  • V2 50 mm/s
  • Curve C5 is obtained when the substrate holder 440 is pulled up at the first speed V1 (numerical value attached to each point on the curve C5) and the second speed V2 (50 mm/s) while rotating the substrate holder 440 at a rotation speed of 5 rpm. shows the measurement results of From this experimental result, the amount of dragout is slightly larger when the substrate Wf is rotated.
  • the substrate holder 440 rotates and the plating solution is swirled up and adheres to the substrate Wf and/or the substrate holder 440 . Therefore, when pulling up the substrate holder 440 , it is preferable not to rotate the substrate Wf and the substrate holder 440 while the substrate holder 440 is in contact with the plating solution in the plating tank 410 .
  • the rotation of the substrate holder 440 causes the plating solution to be swirled up and attached to the substrate holder 440 . Therefore, it is preferable to rotate the substrate holder 440 to facilitate dropping the plating solution adhering to the substrate Wf and/or the substrate holder 440 into the plating bath 410 .
  • FIG. 6 is a vertical cross-sectional view of the plating module showing the process of spraying pure water onto the substrate holder after being pulled up.
  • a sprayer 460 is provided in the plating module 400, and after the substrate holder 440 is raised to the second height H2 (see FIG. 3), the pure water 452 is sprayed onto the substrate Wf and/or the substrate holder 440, and the pure water 452 after spraying is applied. may be returned to the plating bath 410 in part or in whole. Since the pure water 452 after spraying contains the plating solution remaining on the substrate Wf and/or the substrate holder 440, by collecting this in the plating tank 410, the amount of dragout can be further reduced.
  • the amount of the pure water 452 mixed is preferably less than the amount of water evaporated from the plating solution during operation of the apparatus.
  • the portion that is not returned to the plating bath 410 may be drained to a drainage area (not shown) outside the plating bath 410 by rotating the substrate holder 440.
  • a movable tray (not shown) for receiving the sprayed pure water 452 may be prepared.
  • a liquid other than pure water and/or an inert gas such as nitrogen may be sprayed from the injector 460 onto the substrate Wf and/or the substrate holder 440 as a cleaning medium.
  • the sprayed cleaning medium may or may not be mixed into the plating bath 410 .
  • FIG. 7 is an example of a flow chart of the plating method including the process of pulling up the substrate holder according to this embodiment. This process is executed by a program stored in a non-volatile memory (not shown) included in control device 800 . Note that the control device 800 may cooperate with another control device or sequencer to perform this process.
  • step S ⁇ b>11 the substrate holder 440 holding the substrate Wf is immersed in the plating solution of the plating tank 410 by the elevating mechanism 442 .
  • step S12 the substrate Wf is plated.
  • step S13 after the plating process, the tilting mechanism 444 tilts the substrate Wf in the plating solution of the plating bath 410 such that the surface to be plated of the substrate Wf is tilted several degrees (for example, 5°) with respect to the liquid surface (horizontal) of the plating solution. Tilt the holder 440 .
  • step S14 the elevating mechanism 442 raises the substrate holder 440 at a relatively low first speed V1 to the first height H1 when the entire surface of the substrate holder 440 is exposed from the liquid surface of the plating solution. At this time, the substrate holder 440 is not rotated.
  • step S15 the elevating mechanism 442 elevates the substrate holder 440 to the second height H2 at a relatively high second speed V2. At this time, the substrate holder 440 may be rotated.
  • step S16 the injector 460 sprays pure water onto the substrate Wf and/or the substrate holder 440 to clean the substrate Wf and/or the substrate holder 440. Note that the cleaning process in step S16 may be omitted.
  • step S17 the substrate Wf is removed from the substrate holder 440.
  • the evaluation as to whether or not the dragout amount, which is the amount of the plating solution carried out by the substrate Wf, has been reduced can be performed, for example, as follows.
  • the surfaces of the substrate holder 440 and the substrate Wf pulled up from the plating solution are washed with a certain amount of pure water (for example, 1 L), and the electrical conductivity of the recovered washing solution (pure water) is measured.
  • a bat for recovery is arranged below the substrate holder 440 and the cleaning liquid is recovered by the bat.
  • a calibration curve can be created from the relationship between the amount of plating solution mixed and the electrical conductivity. .
  • the amount of dragout of the plating solution can be calculated from the electrical conductivity obtained by the measurement.
  • the first height H1 at the end point of pulling up at the first speed V1 is the height when the entire surface of the substrate holder 440 is exposed from the plating solution. may be lower than the height when the entire surface of the substrate holder 440 is exposed from the plating solution, as long as at least a portion of the substrate holder 440 is exposed from the plating solution. That is, the pulling-up at the first speed may be finished while a part of the substrate holder 440 is in contact with the liquid surface of the plating solution.
  • the first height H1 may be higher than the height when the entire surface of the substrate holder 440 is exposed from the plating solution, as long as the length of the lifting time is within the allowable range.
  • the recovery of the plating solution due to surface tension can be fully utilized.
  • the substrate holder 440 is pulled up at the first speed V1 ( ⁇ V2) to a height where the entire surface of the substrate holder 440 is exposed from the plating solution, and the surfaces of the substrate holder 440 and the substrate Wf are lifted.
  • a method of plating a substrate comprising: plating the substrate held by a substrate holder in a plating solution in a plating bath; at least a portion of the substrate holder is exposed from the surface of the plating solution in the plating bath while the substrate holder is tilted at a predetermined angle from the horizontal.
  • Horizontal is a direction parallel to the ground and can be defined as the direction along which a plane defined by the surface or liquid level (when the surface/liquid level is in a flat state) of the plating solution in the plating bath extends.
  • This plating method can be applied to, for example, a cup-type plating apparatus in which a substrate held by a substrate holder with the surface to be plated facing downward (substantially horizontal) is immersed in a plating solution and plated. .
  • the substrate holder and/or the substrate are adhered to by raising the substrate holder at a relatively slow first speed to a first height where at least a portion of the substrate holder is exposed from the plating solution. It is possible to ensure a long time for the plating solution to be absorbed by the surface of the plating solution due to the surface tension, and to collect a large amount of the plating solution in the plating tank. Note that this embodiment also includes a case where a part of the substrate holder is exposed from the liquid surface of the plating solution at the end of plating, and the substrate holder is raised from that position to a higher first height at the first speed. .
  • the first height is the height when the entire surface of the substrate holder is exposed from the plating solution.
  • the substrate holder can be raised at a relatively slow first speed until the entire surface of the substrate holder is exposed from the plating solution, maximizing the amount of plating solution recovered by surface tension. At the same time, it is possible to maximize the section to be pulled up at the second speed, which is relatively high, and to shorten the pulling up time.
  • the first height is lower than the height when the entire surface of the substrate holder is exposed from the plating solution.
  • the pull-up speed can be set to the relatively high second speed at an earlier stage, and the pull-up time can be further shortened.
  • the first height is higher than the height when the entire surface of the substrate holder is exposed from the plating solution.
  • the substrate holder by pulling up the substrate holder at the first speed to a position higher than the height at which the entire surface of the substrate holder is exposed from the plating solution, recovery of the plating solution due to surface tension is fully utilized. be able to. Also, depending on the first height, the substrate holder is raised at a relatively slow first rate to a height where the entire surface of the substrate holder is exposed from the plating solution, thereby maximizing recovery of the plating solution due to surface tension, and The plating solution remaining on the substrate and/or substrate holder is dropped by continuing to rise at a relatively slow first speed for a certain time/height after the entire surface of the substrate holder is exposed from the plating solution. It can be expected that the time for the plating solution is secured and the recovery of the plating solution is further improved.
  • the step of raising the substrate holder at one or more speeds different from the first and second speeds is further included.
  • Raising at one or more velocities includes at least one of a period of raising the substrate holder at a constant rate, a period of raising with acceleration, and a period of raising with deceleration.
  • a further step added between the recovering step and the step of raising at the second speed adjusts the balance between reducing the amount of plating solution taken out and shortening the lifting period. can do.
  • the substrate holder is not rotated in the recovering step.
  • the plating solution is swirled up in the plating tank by the rotation of the substrate holder, and the plating solution is applied to the substrate holder and/or the substrate. Adhesion can be suppressed.
  • the substrate holder in the step of raising the substrate holder at the second speed, the substrate holder is rotated.
  • the substrate holder is rotated so that the plating bath is moved by the rotation of the substrate holder.
  • the plating solution remaining on the substrate and/or the substrate holder can be efficiently dropped into the plating tank while suppressing or preventing the plating solution from being swirled up.
  • the method further includes the step of spraying pure water onto the surface of the substrate and/or the substrate holder, and allowing part or all of the sprayed pure water to drop into the plating bath.
  • pure water is sprayed onto the substrate and/or the substrate holder to remove the plating solution remaining on the substrate and/or the substrate holder. can be further collected in the plating tank together with the
  • the first speed is 10 mm/s or less.
  • the first speed is 5 mm/s or less.
  • the plating solution is a copper sulfate plating solution.
  • a plating apparatus for plating a substrate is configured to include a substrate holder for holding a substrate, a plating solution and an anode during plating of the substrate, the A plating bath for plating the substrate held by the substrate holder in a plating solution, an elevating mechanism for elevating the substrate holder, a tilting mechanism for tilting the substrate holder, and at least the elevating mechanism and the tilting mechanism are controlled.
  • control device controls the tilting mechanism to tilt the substrate holder so that the surface of the substrate is tilted at a predetermined angle from the horizontal in the plating solution of the plating bath;
  • the elevating mechanism is controlled to elevate the substrate holder at a first speed to a first height where at least part of the substrate holder is exposed from the liquid surface of the plating solution in the plating bath while the substrate holder is tilted. and thereafter raising the substrate holder at a second speed that is higher than the first speed to a second height that is higher than the first height.
  • This embodiment also includes a case where a part of the substrate holder is exposed from the liquid surface of the plating solution at the end of plating, and the substrate holder is raised from that position to a higher first height at the first speed.
  • the plating apparatus is, for example, a cup-type plating apparatus that performs plating by immersing a substrate held in a substrate holder with the surface to be plated facing downward (substantially horizontal) in a plating solution. According to this embodiment, at least some of the effects described in the above embodiment are achieved.
  • plating module 410 plating bath 412 overflow bath 420 membrane 422 cathode region 424 anode region 430 anode 440 substrate holder 442 lifting mechanism 444 tilting mechanism 446 rotating mechanism 450 resistor 460 injector Wf substrate

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
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Abstract

One purpose of the present invention is to reduce the time during which a substrate holder is lifted while also reducing the amount of excess plating solution which is taken from a plating tank. A method for plating a substrate, said method including: a step for plating a substrate held by a substrate holder in a plating solution inside a plating tank; a step for angling the substrate holder in a manner such that the surface of the substrate is tilted at a prescribed angle from horizontal in the plating solution in the plating tank; a step for collecting the plating solution in the plating tank by raising the substrate holder at a first speed to a first height at which at least some of the substrate holder is exposed from the liquid surface of the plating solution in the plating tank while in a state in which the substrate holder is angled, and causing the plating solution adhered to the substrate holder and/or to the substrate to be absorbed by the liquid surface as a result of surface tension; and a step for increasing the substrate holder to a second height which is higher than the first height at a second speed which is faster than is the first speed.

Description

めっき方法及びめっき装置Plating method and plating equipment
 本願は、めっき方法及びめっき装置に関する。 This application relates to a plating method and a plating apparatus.
 めっき装置の一例としてカップ式の電解めっき装置が知られている。カップ式の電解めっき装置は、被めっき面を下方に向けて基板ホルダに保持された基板(例えば半導体ウェハ)をめっき液に浸漬させ、基板とアノードとの間に電圧を印加することによって、基板の表面に導電膜を析出させる。めっき後は、基板を保持した基板ホルダをめっき液から引き上げ、洗浄モジュール等の後続の処理モジュールに搬送する。 A cup-type electroplating device is known as an example of a plating device. A cup-type electroplating apparatus immerses a substrate (for example, a semiconductor wafer) held in a substrate holder with the surface to be plated facing downward in a plating solution, and applies a voltage between the substrate and the anode to A conductive film is deposited on the surface of the After plating, the substrate holder holding the substrate is pulled up from the plating solution and transferred to a subsequent processing module such as a cleaning module.
 めっき後に基板ホルダを引き上げる際に、基板ホルダを水平の姿勢で引き上げると、基板および基板ホルダに付着した多量のめっき液がめっき槽又はめっきモジュールから持ち出される(ドラッグアウトと称す)。一方、基板ホルダを傾斜させて引き上げる方法が知られている。基板ホルダを傾斜させた状態で引き上げることで、重力により傾斜させた基板および基板ホルダの表面をつたってめっき液が落下しやすくなる。これにより、基板ホルダを水平の状態で引き上げたときに比較して、めっき液の持ち出し量(ドラッグアウト量)を低減させることができる。特許第4719631号明細書(特許文献1)に記載のめっき装置では、めっき処理カップの上方で傾斜させたウェハに向かって噴射ノズルから洗浄用媒体を噴射して、ウェハに付着している液をカップ内に回収している。 When pulling up the substrate holder after plating, if the substrate holder is pulled up in a horizontal position, a large amount of plating solution adhering to the substrate and the substrate holder is carried out from the plating bath or plating module (called drag-out). On the other hand, a method of tilting and pulling up the substrate holder is known. By pulling up the substrate holder in an inclined state, the plating solution can easily drop along the surfaces of the substrate and the substrate holder which are inclined by gravity. This makes it possible to reduce the amount of plating solution carried out (drag-out amount) compared to when the substrate holder is pulled up in a horizontal state. In the plating apparatus described in Japanese Patent No. 4719631 (Patent Document 1), a cleaning medium is jetted from a jet nozzle toward a wafer tilted above a plating processing cup to remove the liquid adhering to the wafer. collected in a cup.
特許第4719631号明細書Patent No. 4719631 specification
 基板ホルダを引き上げる速度を遅くするほど、ドラッグアウト量は少なくなる。この理由の一つは、引き上げ処理の時間が長くなるほど、基板ホルダからめっき槽へ落下するめっき液の量が増えるためである。しかしながら、基板ホルダの引き上げ速度を遅くすると、引き上げに時間がかかり、スループットに悪影響を与え得る。そのため、ドラッグアウト量を低減しつつ、引き上げ時間を短くすることが望ましい。 The slower the speed of pulling up the substrate holder, the smaller the dragout amount. One of the reasons for this is that the longer the pulling-up time is, the more the plating solution drops from the substrate holder into the plating bath. However, slowing down the lift speed of the substrate holder can take a long time and adversely affect throughput. Therefore, it is desirable to shorten the pull-up time while reducing the drag-out amount.
 本発明の目的の1つは、めっき槽からのめっき液の持ち出し量を低減しつつ、基板ホルダの引き上げ時間を低減することにある。 One of the purposes of the present invention is to reduce the amount of plating solution carried out from the plating bath while reducing the time required to pull up the substrate holder.
 一実施形態によれば、基板をめっきする方法であって、 基板ホルダに保持された前記基板をめっき槽内のめっき液中でめっきする工程と、 前記めっき槽のめっき液中で前記基板の面が水平から所定の角度で傾くように、前記基板ホルダを傾斜させる工程と、 前記基板ホルダを傾斜させた状態で、前記基板ホルダの少なくとも一部が前記めっき槽のめっき液の液面から露出する第1高さまで前記基板ホルダを第1速度で上昇させ、前記基板ホルダ及び/又は前記基板に付着しているめっき液を表面張力により前記液面に吸収させ前記めっき槽にめっき液を回収する工程と、 前記基板ホルダを前記第1速度より速い第2速度で、前記第1高さより高い第2高さまで上昇させる工程と、を含むめっき方法が開示される。 According to one embodiment, there is provided a method of plating a substrate, comprising: plating the substrate held by a substrate holder in a plating solution in a plating bath; a step of tilting the substrate holder so that the substrate holder is tilted at a predetermined angle from the horizontal; and with the substrate holder being tilted, at least part of the substrate holder is exposed from the liquid surface of the plating solution in the plating bath. a step of raising the substrate holder to a first height at a first speed, absorbing the plating solution adhering to the substrate holder and/or the substrate by surface tension to the liquid surface, and collecting the plating solution in the plating bath; and raising the substrate holder to a second height higher than the first height at a second speed higher than the first speed.
本実施形態のめっき装置の全体構成を示す斜視図である。1 is a perspective view showing the overall configuration of a plating apparatus of this embodiment; FIG. 本実施形態のめっき装置の全体構成を示す平面図である。1 is a plan view showing the overall configuration of a plating apparatus of this embodiment; FIG. 本実施形態のめっきモジュールの構成を概略的に示す縦断面図である。1 is a longitudinal sectional view schematically showing the configuration of a plating module of this embodiment; FIG. 基板ホルダの引き上げ時間とドラッグアウト量の関係を測定した実験結果である。It is an experimental result of measuring the relationship between the pulling-up time of the substrate holder and the amount of dragout. 基板ホルダを回転させない場合と回転させた場合とで、基板ホルダの引き上げ時間とドラッグアウト量の関係を測定した実験結果である。It is an experimental result of measuring the relationship between the pulling-up time of the substrate holder and the drag-out amount when the substrate holder is not rotated and when the substrate holder is rotated. 引き上げ後の基板ホルダに純水を吹き付ける処理を示すめっきモジュールの縦断面図である。FIG. 10 is a vertical cross-sectional view of the plating module showing a process of spraying pure water onto the substrate holder after being pulled up; 基板ホルダの引き上げ処理を含むめっき方法のフローチャートの例である。It is an example of a flow chart of a plating method including a process of pulling up a substrate holder.
 以下、本発明の実施形態について図面を参照して説明する。以下で説明する図面において、同一または相当する構成要素には、同一の符号を付して重複した説明を省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings described below, the same or corresponding components are denoted by the same reference numerals, and redundant descriptions are omitted.
<めっき装置の全体構成>
 図1は、本実施形態のめっき装置の全体構成を示す斜視図である。図2は、本実施形態のめっき装置の全体構成を示す平面図である。図1、2に示すように、めっき装置1000は、ロードポート100、搬送ロボット110、アライナ120、プリウェットモジュール200、プリソークモジュール300、めっきモジュール400、洗浄モジュール500、スピンリンスドライヤ600、搬送装置700、および、制御モジュール800を備える。
<Overall Configuration of Plating Equipment>
FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of this embodiment. FIG. 2 is a plan view showing the overall configuration of the plating apparatus of this embodiment. As shown in FIGS. 1 and 2, the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, and a transfer device. 700 and a control module 800 .
 ロードポート100は、めっき装置1000に図示していないFOUPなどのカセットに収納された基板を搬入したり、めっき装置1000からカセットに基板を搬出するためのモジュールである。本実施形態では4台のロードポート100が水平方向に並べて配置されているが、ロードポート100の数および配置は任意である。搬送ロボット110は、基板を搬送するためのロボットであり、ロードポート100、アライナ120、および搬送装置700の間で基板を受け渡すように構成される。搬送ロボット110および搬送装置700は、搬送ロボット110と搬送装置700との間で基板を受け渡す際には、図示していない仮置き台を介して基板の受け渡しを行うことができる。 The load port 100 is a module for loading substrates stored in cassettes such as FOUPs (not shown) into the plating apparatus 1000 and for unloading substrates from the plating apparatus 1000 to cassettes. Although four load ports 100 are arranged horizontally in this embodiment, the number and arrangement of the load ports 100 are arbitrary. The transport robot 110 is a robot for transporting substrates, and is configured to transfer substrates among the load port 100 , the aligner 120 and the transport device 700 . When transferring substrates between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer the substrates via a temporary placement table (not shown).
 アライナ120は、基板のオリエンテーションフラットやノッチなどの位置を所定の方向に合わせるためのモジュールである。本実施形態では2台のアライナ120が水平方向に並べて配置されているが、アライナ120の数および配置は任意である。プリウェットモジュール200は、めっき処理前の基板の被めっき面を純水または脱気水などの処理液で濡らすことで、基板表面に形成されたパターン内部の空気を処理液に置換する。プリウェットモジュール200は、めっき時にパターン内部の処理液をめっき液に置換することでパターン内部にめっき液を供給しやすくするプリウェット処理を施すように構成される。本実施形態では2台のプリウェットモジュール200が上下方向に並べて配置されているが、プリウェットモジュール200の数および配置は任意である。 The aligner 120 is a module for aligning the positions of orientation flats, notches, etc. of the substrate in a predetermined direction. Although two aligners 120 are arranged horizontally in this embodiment, the number and arrangement of the aligners 120 are arbitrary. The pre-wet module 200 replaces the air inside the pattern formed on the substrate surface with the treatment liquid by wetting the surface to be plated of the substrate before the plating treatment with a treatment liquid such as pure water or degassed water. The pre-wet module 200 is configured to perform a pre-wet process that facilitates the supply of the plating solution to the inside of the pattern by replacing the treatment solution inside the pattern with the plating solution during plating. Although two pre-wet modules 200 are arranged vertically in this embodiment, the number and arrangement of the pre-wet modules 200 are arbitrary.
 プリソークモジュール300は、例えばめっき処理前の基板の被めっき面に形成したシード層表面等に存在する電気抵抗の大きい酸化膜を硫酸や塩酸などの処理液でエッチング除去してめっき下地表面を洗浄または活性化するプリソーク処理を施すように構成される。本実施形態では2台のプリソークモジュール300が上下方向に並べて配置されているが、プリソークモジュール300の数および配置は任意である。めっきモジュール400は、基板にめっき処理を施す。本実施形態では、上下方向に3台かつ水平方向に4台並べて配置された12台のめっきモジュール400のセットが2つあり、合計24台のめっきモジュール400が設けられているが、めっきモジュール400の数および配置は任意である。 In the presoak module 300, for example, an oxide film having a large electric resistance existing on the surface of a seed layer formed on the surface to be plated of the substrate before plating is etched away with a processing liquid such as sulfuric acid or hydrochloric acid, and the surface of the plating substrate is cleaned. Alternatively, it is configured to perform a pre-soak process for activation. In this embodiment, two presoak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the presoak modules 300 are arbitrary. The plating module 400 applies plating to the substrate. In this embodiment, there are two sets of 12 plating modules 400 arranged vertically and four horizontally, and a total of 24 plating modules 400 are provided. The number and arrangement of are arbitrary.
 洗浄モジュール500は、めっき処理後の基板に残るめっき液等を除去するために基板に洗浄処理を施すように構成される。本実施形態では2台の洗浄モジュール500が上下方向に並べて配置されているが、洗浄モジュール500の数および配置は任意である。スピンリンスドライヤ600は、洗浄処理後の基板を高速回転させて乾燥させるためのモジュールである。本実施形態では2台のスピンリンスドライヤが上下方向に並べて配置されているが、スピンリンスドライヤの数および配置は任意である。搬送装置700は、めっき装置1000内の複数のモジュール間で基板を搬送するための装置である。制御モジュール800は、めっき装置1000の複数のモジュールを制御するように構成され、例えばオペレータとの間の入出力インターフェースを備える一般的なコンピュータまたは専用コンピュータから構成することができる。 The cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove the plating solution and the like remaining on the substrate after the plating process. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary. The spin rinse dryer 600 is a module for drying the substrate after cleaning by rotating it at high speed. Although two spin rinse dryers are arranged vertically in this embodiment, the number and arrangement of the spin rinse dryers are arbitrary. The transport device 700 is a device for transporting substrates between a plurality of modules within the plating apparatus 1000 . Control module 800 is configured to control a plurality of modules of plating apparatus 1000 and may comprise, for example, a general purpose or dedicated computer with input/output interfaces to an operator.
 めっき装置1000による一連のめっき処理の一例を説明する。まず、ロードポート100にカセットに収納された基板が搬入される。続いて、搬送ロボット110は、ロードポート100のカセットから基板を取り出し、アライナ120に基板を搬送する。アライナ120は、基板のオリエンテーションフラットやノッチなどの位置を所定の方向に合わせる。搬送ロボット110は、アライナ120で方向を合わせた基板を搬送装置700へ受け渡す。 An example of a series of plating processes by the plating apparatus 1000 will be explained. First, a substrate stored in a cassette is loaded into the load port 100 . Subsequently, the transport robot 110 takes out the substrate from the cassette of the load port 100 and transports the substrate to the aligner 120 . The aligner 120 aligns orientation flats, notches, etc. of the substrate in a predetermined direction. The transport robot 110 transfers the substrate aligned by the aligner 120 to the transport device 700 .
 搬送装置700は、搬送ロボット110から受け取った基板をプリウェットモジュール200へ搬送する。プリウェットモジュール200は、基板にプリウェット処理を施す。搬送装置700は、プリウェット処理が施された基板をプリソークモジュール300へ搬送する。プリソークモジュール300は、基板にプリソーク処理を施す。搬送装置700は、プリソーク処理が施された基板をめっきモジュール400へ搬送する。めっきモジュール400は、基板にめっき処理を施す。 The transport device 700 transports the substrate received from the transport robot 110 to the pre-wet module 200 . The pre-wet module 200 pre-wets the substrate. The transport device 700 transports the pre-wet processed substrate to the pre-soak module 300 . The presoak module 300 applies a presoak treatment to the substrate. The transport device 700 transports the presoaked substrate to the plating module 400 . The plating module 400 applies plating to the substrate.
 搬送装置700は、めっき処理が施された基板を洗浄モジュール500へ搬送する。洗浄モジュール500は、基板に洗浄処理を施す。搬送装置700は、洗浄処理が施された基板をスピンリンスドライヤ600へ搬送する。スピンリンスドライヤ600は、基板に乾燥処理を施す。搬送装置700は、乾燥処理が施された基板を搬送ロボット110へ受け渡す。搬送ロボット110は、搬送装置700から受け取った基板をロードポート100のカセットへ搬送する。最後に、ロードポート100から基板を収納したカセットが搬出される。 The transport device 700 transports the plated substrate to the cleaning module 500 . The cleaning module 500 performs a cleaning process on the substrate. The transport device 700 transports the cleaned substrate to the spin rinse dryer 600 . A spin rinse dryer 600 performs a drying process on the substrate. The transport device 700 delivers the dried substrate to the transport robot 110 . The transport robot 110 transports the substrate received from the transport device 700 to the cassette of the load port 100 . Finally, the cassette containing the substrates is unloaded from the load port 100 .
 <めっきモジュールの構成>
 次に、めっきモジュール400の構成を説明する。本実施形態における24台のめっきモジュール400は同一の構成であるので、1台のめっきモジュール400のみを説明する。図3は、本実施形態のめっきモジュール400の構成を概略的に示す縦断面図である。図3に示すように、めっきモジュール400は、めっき液を収容するためのめっき槽410と、めっき槽410の周りに配置されたオーバフロー槽412とを備える。オーバフロー槽412は、めっき槽410から溢れためっき液を回収する。オーバフロー槽412で回収されためっき液は、図示しない循環経路を介してめっき槽410に戻され、再利用される。めっきモジュール400は、めっき槽410の内部を上下方向に隔てるメンブレン420を備える。めっき槽410の内部はメンブレン420によってカソード領域422とアノード領域424に仕切られる。カソード領域422とアノード領域424にはそれぞれめっき液が充填される。アノード領域424のめっき槽410の底面にはアノード430が設けられる。カソード領域422にはメンブレン420に対向して抵抗体450が配置される。抵抗体450は、基板Wfの被めっき面におけるめっき処理の均一化を図るための部材であり、多数の孔が形成された板状部材によって構成される。
<Configuration of plating module>
Next, the configuration of the plating module 400 will be described. Since the 24 plating modules 400 in this embodiment have the same configuration, only one plating module 400 will be described. FIG. 3 is a longitudinal sectional view schematically showing the configuration of the plating module 400 of this embodiment. As shown in FIG. 3, the plating module 400 includes a plating bath 410 for containing a plating solution and an overflow bath 412 arranged around the plating bath 410 . The overflow bath 412 collects the plating solution overflowing from the plating bath 410 . The plating solution recovered in the overflow bath 412 is returned to the plating bath 410 through a circulation path (not shown) and reused. The plating module 400 includes a membrane 420 that vertically separates the interior of the plating bath 410 . The interior of the plating bath 410 is partitioned into a cathode area 422 and an anode area 424 by a membrane 420 . Cathode region 422 and anode region 424 are each filled with a plating solution. An anode 430 is provided on the bottom surface of the plating bath 410 in the anode area 424 . A resistor 450 is disposed in the cathode region 422 so as to face the membrane 420 . The resistor 450 is a member for uniformizing the plating process on the surface to be plated of the substrate Wf, and is composed of a plate-like member having a large number of holes.
 また、めっきモジュール400は、被めっき面を下方に向けた状態で基板Wfを保持するための基板ホルダ440を備える。基板ホルダ440は、図示していない電源から基板Wfに給電するための給電接点を備える。めっきモジュール400は、基板ホルダ440を昇降させるための昇降機構442を備える。昇降機構442は、例えばモータなどの公知の機構によって実現することができる。めっきモジュール400は、昇降機構442を用いて基板ホルダ440を下降させて基板Wfをカソード領域422のめっき液に浸漬し、アノード430と基板Wfとの間に電圧を印加することによって、基板Wfの被めっき面にめっき処理を施すように構成される。 The plating module 400 also includes a substrate holder 440 for holding the substrate Wf with the surface to be plated facing downward. The substrate holder 440 includes power contacts for powering the substrate Wf from a power source (not shown). The plating module 400 includes an elevating mechanism 442 for elevating the substrate holder 440 . The lifting mechanism 442 can be implemented by a known mechanism such as a motor. The plating module 400 lowers the substrate holder 440 using the elevating mechanism 442 to immerse the substrate Wf in the plating solution in the cathode region 422, and applies a voltage between the anode 430 and the substrate Wf to lift the substrate Wf. It is configured to apply plating to the surface to be plated.
 また、めっきモジュール400は、基板ホルダ440を傾斜させるための傾斜機構444を備える。傾斜機構444は、例えばチルト機構と称される機構などの公知の機構によって実現することができる。さらに、めっきモジュール400は、被めっき面の中央を垂直に伸びる仮想的な回転軸周りに基板Wfが回転するように基板ホルダ440を回転させるための回転機構446を備える。回転機構446は、例えばモータなどの公知の機構によって実現することができる。 The plating module 400 also includes a tilting mechanism 444 for tilting the substrate holder 440 . The tilting mechanism 444 can be implemented by a known mechanism such as a mechanism called a tilting mechanism. Furthermore, the plating module 400 includes a rotation mechanism 446 for rotating the substrate holder 440 so that the substrate Wf rotates around a virtual rotation axis extending vertically through the center of the surface to be plated. The rotating mechanism 446 can be implemented by a known mechanism such as a motor.
 本実施形態において昇降機構442は、傾斜機構444によって基板ホルダ440に保持された基板Wfの被めっき面が水平面(めっき液の液面)に対して数度(例えば、5°)傾斜した状態で基板ホルダ440を上昇させて基板Wfをめっき液から引き上げるように構成される。また、昇降機構442は、傾斜機構444によって基板ホルダ440に保持された基板Wfの被めっき面がめっき液の液面に対して数度傾斜した状態で基板ホルダ440を下降させて基板Wfを浸漬させるように構成されてもよい。水平面とは、地面に対して平行な平面であり、めっき槽内のめっき液の表面又は液面(表面/液面が平坦な状態のとき)によって定義される平面として定義できる。 In this embodiment, the elevating mechanism 442 is operated in a state in which the surface to be plated of the substrate Wf held by the substrate holder 440 by the tilting mechanism 444 is tilted several degrees (for example, 5°) with respect to the horizontal plane (liquid surface of the plating solution). It is configured to raise the substrate holder 440 to lift the substrate Wf out of the plating solution. Further, the elevating mechanism 442 lowers the substrate holder 440 in a state in which the surface to be plated of the substrate Wf held by the substrate holder 440 is tilted several degrees with respect to the surface of the plating solution by the tilting mechanism 444, and the substrate Wf is immersed. may be configured to allow A horizontal plane is a plane parallel to the ground and can be defined as a plane defined by the surface or liquid level of the plating solution in the plating bath (when the surface/liquid level is in a flat state).
 <引き上げ速度の制御>
 実験により、基板ホルダ440をめっき液面から引き上げている途中(基板ホルダ440の一部が液面から露出し、一部が液中にある状態)の速度を低速にすると、めっき液の持ち出し量(ドラッグアウト量)の低減に効果があることが分かった。これは、引き上げと同時に基板ホルダ440および基板Wfの表面のめっき液が表面張力によりめっき槽410内のめっき液に吸収されるためである。そこで、本実施形態では、図3に示すように、基板ホルダ440を傾けた状態で引き上げる際に、基板ホルダ440を第1速度V1でめっき液から引き上げ、基板ホルダ440の全面がめっき液から露出するときの高さ(第1高さH1)から、より速い第2速度V2(>V1)で第2高さH2まで上昇させる構成を採用する。これにより、ドラッグアウト量を低減しながら、基板表面の乾燥を抑制しつつ、引き上げ時間を短縮する構成を採用する。
<Control of lifting speed>
Experiments have shown that when the speed during lifting the substrate holder 440 from the surface of the plating solution (a state in which part of the substrate holder 440 is exposed from the surface of the solution and part of which is in the solution) is reduced, the amount of the plating solution taken out increases. (drag-out amount) was found to be effective. This is because the plating solution on the surfaces of the substrate holder 440 and the substrate Wf is absorbed by the plating solution in the plating bath 410 due to surface tension simultaneously with the lifting. Therefore, in the present embodiment, as shown in FIG. 3, when the substrate holder 440 is pulled up in an inclined state, the substrate holder 440 is pulled up from the plating solution at the first speed V1 so that the entire surface of the substrate holder 440 is exposed from the plating solution. A configuration is adopted in which the height (first height H1) at the time of the movement is raised to the second height H2 at a faster second speed V2 (>V1). As a result, a configuration is adopted in which the pulling-up time is shortened while suppressing the drying of the substrate surface while reducing the amount of dragout.
 ここで、第1高さH1は、基板ホルダ440が上昇して基板ホルダ440の全面がめっき液から丁度露出するときの高さ(「基板ホルダ440の全面がめっき液から露出するときの高さ」と称す)を示す。第2高さH2は、第1高さH1より上方にある任意の高さであり、例えば、基板Wfを基板ホルダ440に搬入/搬出するための高さ、及び/又は、基板Wfにリンス液を吹き付けて基板Wfを洗浄するための高さであってもよい。図3中のH0は、基板Wfをめっき液中でめっきする際の基板ホルダ440の高さ(めっき高さと称す)を示す。本実施形態では、めっき高さH0を基板ホルダ440の高さの基準としてH0=0とする。また、基板ホルダ440の高さは、図3に示すように、基板Wfの中心の位置の高さとして定義する。なお、基板ホルダ440の高さは、基板ホルダの他の箇所の高さとしてもよい。 Here, the first height H1 is the height when the substrate holder 440 rises and the entire surface of the substrate holder 440 is just exposed from the plating solution ("height when the entire surface of the substrate holder 440 is exposed from the plating solution. ”). The second height H2 is an arbitrary height above the first height H1, for example, the height for loading/unloading the substrate Wf to/from the substrate holder 440 and/or the rinsing liquid for the substrate Wf. may be at a height for cleaning the substrate Wf by spraying. H0 in FIG. 3 indicates the height of the substrate holder 440 (referred to as plating height) when the substrate Wf is plated in the plating solution. In the present embodiment, the plating height H0 is set to H0=0 as a reference for the height of the substrate holder 440 . Also, the height of the substrate holder 440 is defined as the height of the center position of the substrate Wf, as shown in FIG. Note that the height of the substrate holder 440 may be the height of another portion of the substrate holder.
 図4は、基板ホルダの引き上げ時間とドラッグアウト量の関係を測定した実験結果である。この実験結果は、めっき液として硫酸銅めっき液を使用した場合のものである。同図のグラフにおいて、横軸は第2高さH2までの引き上げに要する引き上げ時間(s、秒)を示し、縦軸はめっき液の持ち出し量であるドラッグアウト量(mL)を示す。 FIG. 4 shows experimental results of measuring the relationship between the substrate holder lifting time and the amount of dragout. This experimental result was obtained when a copper sulfate plating solution was used as the plating solution. In the graph of FIG. 4, the horizontal axis indicates the lifting time (s, seconds) required for lifting to the second height H2, and the vertical axis indicates the dragout amount (mL), which is the amount of the plating solution taken out.
 曲線CAは、引き上げ速度一定で基板ホルダ440を引き上げた場合の測定結果である。曲線CA上の各点に付した数値は、一定の引き上げ速度を示す。例えば、点50mm/sは、引き上げ速度を一定速度50mm/sとして基板ホルダ440を引き上げた場合の測定結果であり、引き上げ時間は約2s、ドラッグアウト量は約17.5mLであることを示す。点1mm/sは、引き上げ速度を一定速度1mm/sとして基板ホルダ440を引き上げた場合の測定結果であり、引き上げ時間は約108s、ドラッグアウト量は約1.8mLであることを示す。即ち、引き上げ速度一定で基板ホルダ440を引き上げた場合には、引き上げ速度を大きくすると、ドラッグアウト量の十分な低減が得られず、一方、引き上げ速度を小さくすると、ドラッグアウト量の低減は得られるが、引き上げ時間が大幅に増加することが分かる。 A curve CA is a measurement result when the substrate holder 440 is lifted at a constant lifting speed. A numerical value attached to each point on the curve CA indicates a constant pulling speed. For example, the point 50 mm/s is the measurement result when the substrate holder 440 is pulled up at a constant pulling speed of 50 mm/s, indicating that the pulling up time is about 2 s and the dragout amount is about 17.5 mL. A point of 1 mm/s is a measurement result when the substrate holder 440 is pulled up at a constant pulling speed of 1 mm/s, and indicates that the pulling up time is about 108 s and the dragout amount is about 1.8 mL. In other words, when the substrate holder 440 is lifted at a constant lifting speed, if the lifting speed is increased, the amount of dragout cannot be sufficiently reduced. However, it can be seen that the pulling time is greatly increased.
 曲線CBは、第1速度V1で第1高さH1まで基板ホルダ440を引き上げた後、第2速度V2(この測定では50mm/s)で第2の高さまで基板ホルダ440を引き上げた場合の測定結果である。曲線CB上の各点に付した数値は、第1速度V1の値を示す。例えば、点10mm/sは、第1速度V1=10mm/sで第1高さH1まで引き上げた後、第2速度V2=50mm/sで第2高さH2まで引き上げた場合の測定結果であり、引き上げ時間は約4s、ドラッグアウト量は約9.5mLであることを示す。点1mm/sは、第1速度V1=1mm/sで第1高さH1まで引き上げた後、第2速度V2=50mm/sで第2高さH2まで引き上げた場合の測定結果であり、引き上げ時間は約35s、ドラッグアウト量は約1.8mLであることを示す。即ち、基板ホルダ440の全体が液面から露出するときの高さH1まで第1速度V1で引き上げ、その後、第2高さH2まで第2速度V2(>V1)で引き上げることにより、ドラッグアウト量を低減しつつ、引き上げ時間を短縮できることが分かる。 Curve CB is measured when the substrate holder 440 is lifted to a first height H1 at a first speed V1 and then lifted to a second height at a second speed V2 (50 mm/s in this measurement). This is the result. A numerical value attached to each point on the curve CB indicates the value of the first speed V1. For example, the point 10 mm/s is the measurement result when the first speed V1 is pulled up to the first height H1 at 10 mm/s and then the second speed V2 is pulled up to the second height H2 at 50 mm/s. , indicating that the pull-up time is about 4 s and the dragout volume is about 9.5 mL. The point 1 mm/s is the measurement result when pulled up to the first height H1 at the first speed V1 = 1 mm/s and then pulled up to the second height H2 at the second speed V2 = 50 mm/s. The time is approximately 35 s and the dragout volume is approximately 1.8 mL. That is, the substrate holder 440 is lifted up at the first speed V1 to the height H1 when the entire substrate holder 440 is exposed from the liquid surface, and then lifted up to the second height H2 at the second speed V2 (>V1). It can be seen that the pull-up time can be shortened while reducing the
 図4の曲線CBに示すように、基板ホルダ440の全面がめっき液の液面から露出するとき(露出する時点)の第1高さH1まで低速の第1速度V1で引き上げ、その後、引き上げ速度を第2速度V2に加速することで、ドラッグアウト量を低減しながら、引き上げ時間を短縮することができる。特に、第1速度V1が10mm/s以下の場合に効果がある。これは、第1速度V1が10mm/sより速い場合、ドラッグアウト量を十分に低減できず、元々の引き上げ時間も短いため、引き上げ時間を更に短縮する必要性が低いからである。より好ましくは、第1速度V1は5mm/s以下であることが好ましい。第1速度V1=5mm/s以下で引き上げた場合、第2速度V2(50mm/s)で引き上げている間に基板ホルダ440からのめっき液の液だれは見られなかった。すなわち、第1速度V1=5mm/s以下で基板ホルダ440を引き上げている間に、基板Wfおよび基板ホルダ440の表面のめっき液が表面張力により十分取り除かれており、第2速度V2を変更したとしてもドラッグアウト量は変わらないと予想される。また、スループットを考慮すると、第1速度V1は、1mm/s以上であることが好ましい。 As indicated by curve CB in FIG. 4, the substrate holder 440 is pulled up at a low first speed V1 to a first height H1 when the entire surface of the substrate holder 440 is exposed from the surface of the plating solution (at the time of exposure). is accelerated to the second speed V2, it is possible to shorten the pull-up time while reducing the drag-out amount. In particular, it is effective when the first speed V1 is 10 mm/s or less. This is because if the first speed V1 is higher than 10 mm/s, the dragout amount cannot be sufficiently reduced, and the original pull-up time is short, so there is little need to further shorten the pull-up time. More preferably, the first speed V1 is 5 mm/s or less. When the substrate was pulled up at the first velocity V1=5 mm/s or less, no dripping of the plating solution from the substrate holder 440 was observed during the pulling up at the second velocity V2 (50 mm/s). That is, while the substrate holder 440 was pulled up at the first speed V1=5 mm/s or less, the plating solution on the surfaces of the substrate Wf and the substrate holder 440 was sufficiently removed by surface tension, and the second speed V2 was changed. However, it is expected that the amount of dragout will not change. Also, considering the throughput, the first speed V1 is preferably 1 mm/s or more.
 図5は、基板ホルダを回転させない場合と回転させた場合とで、基板ホルダの引き上げ時間とドラッグアウト量の関係を測定した実験結果である。この実験結果は、めっき液として硫酸銅めっき液を使用した場合のものである。同図のグラフにおいて、横軸は第2高さH2までの引き上げに要する引き上げ時間(s、秒)を示し、縦軸はめっき液の持ち出し量であるドラッグアウト量(mL)を示す。 FIG. 5 shows experimental results of measuring the relationship between the substrate holder pull-up time and the amount of drag-out when the substrate holder is not rotated and when it is rotated. This experimental result was obtained when a copper sulfate plating solution was used as the plating solution. In the graph of FIG. 4, the horizontal axis indicates the lifting time (s, seconds) required for lifting to the second height H2, and the vertical axis indicates the dragout amount (mL), which is the amount of the plating solution taken out.
 曲線C0は、基板ホルダ440を回転させないで(回転速度0rpm)、第1速度V1(曲線C0上の各点に付した数値)及び第2速度V2(50mm/s)で基板ホルダ440を引き上げた場合の測定結果を示す。曲線C5は、基板ホルダ440を回転速度5rpmで回転させながら、第1速度V1(曲線C5上の各点に付した数値)及び第2速度V2(50mm/s)で基板ホルダ440を引き上げた場合の測定結果を示す。この実験結果より、基板Wfを回転させた場合の方が、ドラッグアウト量はやや多くなっている。これは、基板Wfおよび基板ホルダ440をめっき液面から引き上げる際、基板ホルダ440の回転によりめっき液を巻き上げて基板Wf及び/又は基板ホルダ440にめっき液が付着するためである。そのため、基板ホルダ440を引き上げる際は、基板ホルダ440がめっき槽410のめっき液に接触している間は、基板Wfおよび基板ホルダ440を回転させないほうが好ましい。 The curve C0 is obtained by lifting the substrate holder 440 at a first speed V1 (numerical values attached to each point on the curve C0) and a second speed V2 (50 mm/s) without rotating the substrate holder 440 (rotational speed 0 rpm). The measurement results for the case are shown. Curve C5 is obtained when the substrate holder 440 is pulled up at the first speed V1 (numerical value attached to each point on the curve C5) and the second speed V2 (50 mm/s) while rotating the substrate holder 440 at a rotation speed of 5 rpm. shows the measurement results of From this experimental result, the amount of dragout is slightly larger when the substrate Wf is rotated. This is because when the substrate Wf and the substrate holder 440 are pulled up from the surface of the plating solution, the substrate holder 440 rotates and the plating solution is swirled up and adheres to the substrate Wf and/or the substrate holder 440 . Therefore, when pulling up the substrate holder 440 , it is preferable not to rotate the substrate Wf and the substrate holder 440 while the substrate holder 440 is in contact with the plating solution in the plating tank 410 .
 なお、基板ホルダ440の全面がめっき液から露出し、基板ホルダ440の全面がめっき液の液面から離れた状態では、基板ホルダ440の回転によりめっき液を巻き上げて基板ホルダ440に付着することがないので、基板ホルダ440を回転させて、基板Wf及び/又は基板ホルダ440に付着しためっき液をめっき槽410に落とすことを促進することが好ましい。 In a state where the entire surface of the substrate holder 440 is exposed from the plating solution and the entire surface of the substrate holder 440 is separated from the liquid surface of the plating solution, the rotation of the substrate holder 440 causes the plating solution to be swirled up and attached to the substrate holder 440 . Therefore, it is preferable to rotate the substrate holder 440 to facilitate dropping the plating solution adhering to the substrate Wf and/or the substrate holder 440 into the plating bath 410 .
 図6は、引き上げ後の基板ホルダに純水を吹き付ける処理を示すめっきモジュールの縦断面図である。めっきモジュール400に噴射器460を設け、基板ホルダ440を第2高さH2(図3参照)まで引き上げた後、基板Wf及び/又は基板ホルダ440に純水452を吹き付け、吹き付け後の純水452の一部または全部をめっき槽410に戻してもよい。吹き付け後の純水452には、基板Wf及び/又は基板ホルダ440に残っているめっき液が含まれるので、これをめっき槽410に回収することにより、ドラッグアウト量をさらに低減させることができる。一方で、めっき槽410に純水452が混入することでめっき液が薄まってしまうため、純水452の混入量は、装置運転時のめっき液からの水分蒸発量以下にすることが好ましい。基板Wf及び/又は基板ホルダ440に吹き付けた純水452のうち、めっき槽410に戻さない分は、基板ホルダ440を回転させることでめっき槽410外の図示しない排水エリアに排水してもよいし、吹き付けた純水452を受けるための図示しない可動式のトレーを用意してもよい。 FIG. 6 is a vertical cross-sectional view of the plating module showing the process of spraying pure water onto the substrate holder after being pulled up. A sprayer 460 is provided in the plating module 400, and after the substrate holder 440 is raised to the second height H2 (see FIG. 3), the pure water 452 is sprayed onto the substrate Wf and/or the substrate holder 440, and the pure water 452 after spraying is applied. may be returned to the plating bath 410 in part or in whole. Since the pure water 452 after spraying contains the plating solution remaining on the substrate Wf and/or the substrate holder 440, by collecting this in the plating tank 410, the amount of dragout can be further reduced. On the other hand, since the pure water 452 mixed into the plating tank 410 dilutes the plating solution, the amount of the pure water 452 mixed is preferably less than the amount of water evaporated from the plating solution during operation of the apparatus. Of the pure water 452 sprayed onto the substrate Wf and/or the substrate holder 440, the portion that is not returned to the plating bath 410 may be drained to a drainage area (not shown) outside the plating bath 410 by rotating the substrate holder 440. , a movable tray (not shown) for receiving the sprayed pure water 452 may be prepared.
 なお、噴射器460から純水以外の液体、及び/又は窒素等の不活性ガスを洗浄媒体として基板Wf及び/又は基板ホルダ440に吹き付けるようにしてもよい。洗浄媒体の種類に応じて、吹き付け後の洗浄媒体は、めっき槽410に混入させても混入させなくてもよい。 A liquid other than pure water and/or an inert gas such as nitrogen may be sprayed from the injector 460 onto the substrate Wf and/or the substrate holder 440 as a cleaning medium. Depending on the type of cleaning medium, the sprayed cleaning medium may or may not be mixed into the plating bath 410 .
 図7は、本実施形態に係る基板ホルダの引き上げ処理を含むめっき方法のフローチャートの例である。この処理は、制御装置800に含まれる図示しない不揮発性メモリに保存されたプログラムにより実行される。なお、制御装置800と、その他の制御装置又はシーケンサとが協働して、この処理を実施するようにしてもよい。 FIG. 7 is an example of a flow chart of the plating method including the process of pulling up the substrate holder according to this embodiment. This process is executed by a program stored in a non-volatile memory (not shown) included in control device 800 . Note that the control device 800 may cooperate with another control device or sequencer to perform this process.
 ステップS11では、昇降機構442により、基板Wfを保持する基板ホルダ440をめっき槽410のめっき液に浸漬させる。ステップS12では、基板Wfにめっき処理を実施する。 In step S<b>11 , the substrate holder 440 holding the substrate Wf is immersed in the plating solution of the plating tank 410 by the elevating mechanism 442 . In step S12, the substrate Wf is plated.
 ステップS13では、めっき処理後に、傾斜機構444により、めっき槽410のめっき液中で基板Wfの被めっき面がめっき液の液面(水平)に対して数度(例えば5°)傾くように基板ホルダ440を傾斜させる。 In step S13, after the plating process, the tilting mechanism 444 tilts the substrate Wf in the plating solution of the plating bath 410 such that the surface to be plated of the substrate Wf is tilted several degrees (for example, 5°) with respect to the liquid surface (horizontal) of the plating solution. Tilt the holder 440 .
 ステップS14では、昇降機構442により、基板ホルダ440を、相対的に低速の第1速度V1で、基板ホルダ440の全面がめっき液の液面から露出するときの第1高さH1まで上昇させる。このとき、基板ホルダ440は回転させない。 In step S14, the elevating mechanism 442 raises the substrate holder 440 at a relatively low first speed V1 to the first height H1 when the entire surface of the substrate holder 440 is exposed from the liquid surface of the plating solution. At this time, the substrate holder 440 is not rotated.
 ステップS15では、昇降機構442により、基板ホルダ440を、相対的に高速の第2速度V2で、第2高さH2まで上昇させる。このとき、基板ホルダ440を回転させてもよい。 In step S15, the elevating mechanism 442 elevates the substrate holder 440 to the second height H2 at a relatively high second speed V2. At this time, the substrate holder 440 may be rotated.
 ステップS16では、噴射器460により、基板Wf及び/又は基板ホルダ440に純水を吹き付けて、基板Wf及び/又は基板ホルダ440を洗浄する。なお、ステップS16の洗浄処理は、省略してもよい。 In step S16, the injector 460 sprays pure water onto the substrate Wf and/or the substrate holder 440 to clean the substrate Wf and/or the substrate holder 440. Note that the cleaning process in step S16 may be omitted.
 ステップS17では、基板ホルダ440から基板Wfを取り外す。 In step S17, the substrate Wf is removed from the substrate holder 440.
 (ドラッグアウト量の評価)
 基板Wfによるめっき液の持ち出し量であるドラッグアウト量を低減できたか否かの評価は、例えば、以下のように行うことができる。めっき液から引き上げた基板ホルダ440及び基板Wfの表面をある一定量の純水(例えば、1L)で洗浄し、回収した洗浄液(純水)の電気伝導度を測定する。例えば、基板ホルダ440の下方に回収用のバットを配置して、バットにより洗浄液を回収する。一方、一定量の純水に所定のめっき液を混入させたときの電気伝導度をあらかじめ測定しておくことで、めっき液の混入量と電気伝導度との関係から検量線を作成しておく。この検量線を用いて、測定で得られた電気伝導度から、めっき液のドラッグアウト量を算出することができる。なお、基板Wfの引き上げ後にめっきモジュール400内で洗浄処理する場合(図7のステップS16)には、S16の洗浄後の基板Wfの表面を、更にある一定量の純水(例えば、1L)で洗浄し、更なる洗浄において回収した洗浄液(純水)の電気伝導度を測定する。この方法によれば、ドラッグアウト量を低減できたか否かの評価を十分な精度で簡易に行うことができる。
(Evaluation of drag-out amount)
The evaluation as to whether or not the dragout amount, which is the amount of the plating solution carried out by the substrate Wf, has been reduced can be performed, for example, as follows. The surfaces of the substrate holder 440 and the substrate Wf pulled up from the plating solution are washed with a certain amount of pure water (for example, 1 L), and the electrical conductivity of the recovered washing solution (pure water) is measured. For example, a bat for recovery is arranged below the substrate holder 440 and the cleaning liquid is recovered by the bat. On the other hand, by measuring the electrical conductivity in advance when a given plating solution is mixed into a certain amount of pure water, a calibration curve can be created from the relationship between the amount of plating solution mixed and the electrical conductivity. . Using this calibration curve, the amount of dragout of the plating solution can be calculated from the electrical conductivity obtained by the measurement. When the substrate Wf is washed in the plating module 400 after being pulled up (step S16 in FIG. 7), the surface of the substrate Wf after washing in S16 is further washed with a certain amount of pure water (for example, 1 L). After washing, the electric conductivity of the washing liquid (pure water) collected in further washing is measured. According to this method, it is possible to easily evaluate whether or not the amount of dragout has been reduced with sufficient accuracy.
 (他の実施形態)
 (1)上記実施形態では、第1速度V1(<V2)で引き上げる終点の第1高さH1が、基板ホルダ440の全面がめっき液から露出するときの高さとしたが、第1高さH1は、基板ホルダ440の少なくとも一部がめっき液から露出する高さであれば、基板ホルダ440の全面がめっき液から露出するときの高さよりも低くてもよい。即ち、基板ホルダ440の一部がめっき液の液面に接触している状態で第1速度での引き上げを終了してもよい。この場合も、基板ホルダ440の一部がめっき液液面から露出し、一部がめっき液中にある状態での引き上げ中の引き上げ速度を第1速度V1とすることにより、基板ホルダ440及び/又は基板Wfの表面のめっき液が表面張力によりめっき槽410内のめっき液に吸収され、ドラッグアウト量を低減することができる。
 (2)また、第1高さH1は、引き上げ時間の長さが許容範囲にある限り、基板ホルダ440の全面がめっき液から露出するときの高さより高くてもよい。この場合、基板ホルダ440の全面がめっき液から露出するときの高さより高い位置まで第1速度で基板ホルダ440を引き上げることにより、表面張力によるめっき液の回収を最大限、確実に利用することができる。また、第1の高さH1によっては、基板ホルダ440の全面がめっき液から露出するときの高さまで基板ホルダ440を第1速度V1(<V2)で引き上げて、基板ホルダ440および基板Wfの表面のめっき液が表面張力によりめっき槽410内のめっき液に吸収されると共に、その後、第1速度V1で引き上げる間に基板ホルダ440及び/又は基板Wfからめっき液をより多くめっき槽410に落とすことも期待し得る。
 (3)上記実施形態では、第1速度V1で基板ホルダ440を引き上げる期間の後、引き続き、第2速度V2で基板ホルダ440を引き上げる例を説明したが、第1速度V1で引き上げる期間と、第2速度V2で引き上げる期間との間に、第1速度V1及び第2速度V2と異なる1又は複数の速度で基板ホルダ440を引き上げる期間を設けてもよい。このような期間を第1速度V1で引き上げる期間と第2速度V2で引き上げる期間との間に更に設けることで、めっき液の持ち出し量の低減と、引き上げ期間の短縮とのバランスを調整することができる。
(Other embodiments)
(1) In the above embodiment, the first height H1 at the end point of pulling up at the first speed V1 (<V2) is the height when the entire surface of the substrate holder 440 is exposed from the plating solution. may be lower than the height when the entire surface of the substrate holder 440 is exposed from the plating solution, as long as at least a portion of the substrate holder 440 is exposed from the plating solution. That is, the pulling-up at the first speed may be finished while a part of the substrate holder 440 is in contact with the liquid surface of the plating solution. In this case also, the substrate holder 440 and/or substrate holder 440 and/or substrate holder 440 and/or substrate holder 440 and/or Alternatively, the plating solution on the surface of the substrate Wf is absorbed by the plating solution in the plating tank 410 due to surface tension, and the amount of dragout can be reduced.
(2) Also, the first height H1 may be higher than the height when the entire surface of the substrate holder 440 is exposed from the plating solution, as long as the length of the lifting time is within the allowable range. In this case, by pulling up the substrate holder 440 at the first speed to a position higher than the height at which the entire surface of the substrate holder 440 is exposed from the plating solution, the recovery of the plating solution due to surface tension can be fully utilized. can. Further, depending on the first height H1, the substrate holder 440 is pulled up at the first speed V1 (<V2) to a height where the entire surface of the substrate holder 440 is exposed from the plating solution, and the surfaces of the substrate holder 440 and the substrate Wf are lifted. of the plating solution is absorbed by the plating solution in the plating bath 410 due to surface tension, and then, while the substrate is being pulled up at the first speed V1, more of the plating solution is dropped from the substrate holder 440 and/or the substrate Wf into the plating bath 410. can also be expected.
(3) In the above embodiment, an example was described in which the substrate holder 440 was lifted at the second speed V2 after the period during which the substrate holder 440 was lifted at the first speed V1. A period during which the substrate holder 440 is pulled up at one or a plurality of speeds different from the first speed V1 and the second speed V2 may be provided between the period during which the substrate holder 440 is lifted at the two speeds V2. By further providing such a period between the period of pulling up at the first speed V1 and the period of pulling up at the second speed V2, it is possible to adjust the balance between the reduction of the amount of the plating solution taken out and the shortening of the pulling period. can.
 上記実施形態から少なくとも以下の実施形態が把握される。
 一実施形態によれば、基板をめっきする方法であって、 基板ホルダに保持された前記基板をめっき槽内のめっき液中でめっきする工程と、 前記めっき槽のめっき液中で前記基板の面が水平から所定の角度で傾くように、前記基板ホルダを傾斜させる工程と、 前記基板ホルダを傾斜させた状態で、前記基板ホルダの少なくとも一部が前記めっき槽のめっき液の液面から露出する第1高さまで前記基板ホルダを第1速度で上昇させ、前記基板ホルダ及び/又は前記基板に付着しているめっき液を表面張力により前記液面に吸収させ前記めっき槽にめっき液を回収する工程と、 前記基板ホルダを前記第1速度より速い第2速度で、前記第1高さより高い第2高さまで上昇させる工程と、を含むめっき方法が提供される。水平とは、地面に対して平行な方向であり、めっき槽内のめっき液の表面又は液面(表面/液面が平坦な状態のとき)によって定義される平面が延びる方向として定義できる。このめっき方法は、例えば、被めっき面を下方に向けて(基板面を概ね水平にして)基板ホルダに保持された基板をめっき液に浸漬させ、めっきするカップ式のめっき装置に適用可能である。
At least the following embodiments can be grasped from the above embodiments.
According to one embodiment, there is provided a method of plating a substrate, comprising: plating the substrate held by a substrate holder in a plating solution in a plating bath; at least a portion of the substrate holder is exposed from the surface of the plating solution in the plating bath while the substrate holder is tilted at a predetermined angle from the horizontal. a step of raising the substrate holder to a first height at a first speed, absorbing the plating solution adhering to the substrate holder and/or the substrate by surface tension to the liquid surface, and collecting the plating solution in the plating bath; and elevating the substrate holder at a second speed that is greater than the first speed to a second height that is greater than the first height. Horizontal is a direction parallel to the ground and can be defined as the direction along which a plane defined by the surface or liquid level (when the surface/liquid level is in a flat state) of the plating solution in the plating bath extends. This plating method can be applied to, for example, a cup-type plating apparatus in which a substrate held by a substrate holder with the surface to be plated facing downward (substantially horizontal) is immersed in a plating solution and plated. .
 この実施形態によれば、基板ホルダの少なくとも一部がめっき液から露出する第1高さまで基板ホルダを相対的に低速の第1速度で上昇させることにより、基板ホルダ及び/又は基板に付着しているめっき液を表面張力によりめっき液の液面に吸収させる時間を長く確保することができ、めっき槽により多くのめっき液を回収することができる。なお、この実施形態は、めっき終了時に基板ホルダの一部がめっき液の液面から露出しており、その位置から、さらに高い第1高さまで第1速度で基板ホルダを上昇させる場合も含むものとする。また、第1高さまで上昇させた後に相対的に高速の第2速度で上昇させることで、基板ホルダの引き上げ全体に要する引き上げ時間が増加することを抑制することができる。この結果、めっき液の持ち出し量を低減しつつ、基板ホルダの引き上げ時間を短縮することができる。即ち、めっき液の使用量、コストを低減し、かつ、スループットへの影響を抑制できる。また、基板ホルダの引き上げ時間の増加を抑制することにより、基板表面の乾燥を抑制することもできる。 According to this embodiment, the substrate holder and/or the substrate are adhered to by raising the substrate holder at a relatively slow first speed to a first height where at least a portion of the substrate holder is exposed from the plating solution. It is possible to ensure a long time for the plating solution to be absorbed by the surface of the plating solution due to the surface tension, and to collect a large amount of the plating solution in the plating tank. Note that this embodiment also includes a case where a part of the substrate holder is exposed from the liquid surface of the plating solution at the end of plating, and the substrate holder is raised from that position to a higher first height at the first speed. . Further, by raising the substrate holder at a relatively high second speed after raising it to the first height, it is possible to suppress an increase in the raising time required for the entire raising of the substrate holder. As a result, it is possible to shorten the time required to pull up the substrate holder while reducing the amount of plating solution carried out. That is, it is possible to reduce the amount of plating solution used and the cost, and suppress the influence on the throughput. In addition, drying of the substrate surface can be suppressed by suppressing an increase in the time required to pull up the substrate holder.
 一実施形態によれば、 前記第1高さは、前記基板ホルダの全面がめっき液から露出するときの高さである。 According to one embodiment, the first height is the height when the entire surface of the substrate holder is exposed from the plating solution.
 この実施形態によれば、基板ホルダの全面がめっき液から露出するときまで、相対的に低速の第1速度で基板ホルダを上昇させることができ、表面張力によるめっき液の回収量を最大化することができると共に、相対的に高速の第2速度で引き上げる区間を最大化することができ、引き上げ時間の短縮を図ることができる。 According to this embodiment, the substrate holder can be raised at a relatively slow first speed until the entire surface of the substrate holder is exposed from the plating solution, maximizing the amount of plating solution recovered by surface tension. At the same time, it is possible to maximize the section to be pulled up at the second speed, which is relatively high, and to shorten the pulling up time.
 一実施形態によれば、 前記第1高さは、前記基板ホルダの全面がめっき液から露出するときの高さより低い。 According to one embodiment, the first height is lower than the height when the entire surface of the substrate holder is exposed from the plating solution.
 この実施形態によれば、基板ホルダの全面がめっき液から露出するときの高さより低い高さまで相対的に低速の第1速度で基板ホルダを上昇させることで十分にめっき液を回収できる場合に、より早い段階で引き上げ速度を相対的に高速の第2速度にすることができ、引き上げ時間の短縮を更に図ることができる。 According to this embodiment, when the plating solution can be recovered sufficiently by raising the substrate holder at a relatively low first speed to a height lower than the height at which the entire surface of the substrate holder is exposed from the plating solution, The pull-up speed can be set to the relatively high second speed at an earlier stage, and the pull-up time can be further shortened.
 一実施形態によれば、 前記第1高さは、前記基板ホルダの全面がめっき液から露出するときの高さより高い。 According to one embodiment, the first height is higher than the height when the entire surface of the substrate holder is exposed from the plating solution.
 この実施形態によれば、前記基板ホルダの全面がめっき液から露出するときの高さより高い位置まで第1速度で基板ホルダを引き上げることにより、表面張力によるめっき液の回収を最大限確実に利用することができる。また、第1の高さによっては、基板ホルダの全面がめっき液から露出するときの高さまで、相対的に低速の第1速度での上昇により表面張力によるめっき液の回収を最大化すると共に、基板ホルダの全面がめっき液から露出した後の一定時間/高さの間、相対的に低速の第1速度での上昇を続けることにより、基板及び/又は基板ホルダに残っているめっき液を落下させる時間を確保し、めっき液の回収を更に向上させることも期待できる。 According to this embodiment, by pulling up the substrate holder at the first speed to a position higher than the height at which the entire surface of the substrate holder is exposed from the plating solution, recovery of the plating solution due to surface tension is fully utilized. be able to. Also, depending on the first height, the substrate holder is raised at a relatively slow first rate to a height where the entire surface of the substrate holder is exposed from the plating solution, thereby maximizing recovery of the plating solution due to surface tension, and The plating solution remaining on the substrate and/or substrate holder is dropped by continuing to rise at a relatively slow first speed for a certain time/height after the entire surface of the substrate holder is exposed from the plating solution. It can be expected that the time for the plating solution is secured and the recovery of the plating solution is further improved.
 一実施形態によれば、 前記回収する工程と前記第2速度で上昇させる処理との間に、前記基板ホルダを前記第1及び第2速度と異なる1又は複数の速度で上昇させる工程を更に含む。1又は複数の速度で上昇させる工程は、基板ホルダを一定速度で上昇させる期間、加速させながら上昇させる期間、及び、減速させながら上昇させる期間の少なくとも1つを含む。 According to one embodiment, between the recovering step and the step of raising at the second speed, the step of raising the substrate holder at one or more speeds different from the first and second speeds is further included. . Raising at one or more velocities includes at least one of a period of raising the substrate holder at a constant rate, a period of raising with acceleration, and a period of raising with deceleration.
 この実施形態によれば、前記回収する工程と前記第2速度で上昇させる処理との間に追加される更なる工程により、めっき液の持ち出し量の低減と、引き上げ期間の短縮とのバランスを調整することができる。 According to this embodiment, a further step added between the recovering step and the step of raising at the second speed adjusts the balance between reducing the amount of plating solution taken out and shortening the lifting period. can do.
 一実施形態によれば、 前記回収する工程において前記基板ホルダを回転させない。 According to one embodiment, the substrate holder is not rotated in the recovering step.
 この実施形態によれば、基板ホルダがめっき液に接触している間は基板ホルダを回転させないことにより、基板ホルダの回転によるめっき槽のめっき液の巻き上げにより基板ホルダ及び/又は基板にめっき液が付着することを抑制することができる。 According to this embodiment, by not rotating the substrate holder while the substrate holder is in contact with the plating solution, the plating solution is swirled up in the plating tank by the rotation of the substrate holder, and the plating solution is applied to the substrate holder and/or the substrate. Adhesion can be suppressed.
 一実施形態によれば、 前記第2速度で前記基板ホルダを上昇させる工程において、前記基板ホルダを回転させる。 According to one embodiment, in the step of raising the substrate holder at the second speed, the substrate holder is rotated.
 この実施形態によれば、基板ホルダの全面がめっき液から露出した後、つまり基板ホルダがめっき液の液面から離れた状態で、基板ホルダを回転させることにより、基板ホルダの回転によるめっき槽のめっき液の巻き上げを抑制ないし防止しつつ、基板及び/又は基板ホルダに残っているめっき液を効率よくめっき槽に落とすことができる。 According to this embodiment, after the entire surface of the substrate holder is exposed from the plating solution, that is, in a state in which the substrate holder is separated from the liquid surface of the plating solution, the substrate holder is rotated so that the plating bath is moved by the rotation of the substrate holder. The plating solution remaining on the substrate and/or the substrate holder can be efficiently dropped into the plating tank while suppressing or preventing the plating solution from being swirled up.
 一実施形態によれば、 前記基板および/又は前記基板ホルダの表面に純水を吹き付け、吹き付け後の純水の一部または全部をめっき槽内に落下させる工程を更に含む。 According to one embodiment, the method further includes the step of spraying pure water onto the surface of the substrate and/or the substrate holder, and allowing part or all of the sprayed pure water to drop into the plating bath.
 この実施形態によれば、基板ホルダをめっき液の上方の高さまで引き上げた後に、基板及び/又は基板ホルダに純水を吹き付けることにより、基板及び/又は基板ホルダに残っているめっき液を純水と共にめっき槽に更に回収することができる。 According to this embodiment, after the substrate holder is lifted to a height above the plating solution, pure water is sprayed onto the substrate and/or the substrate holder to remove the plating solution remaining on the substrate and/or the substrate holder. can be further collected in the plating tank together with the
 一実施形態によれば、 前記第1速度は10mm/s以下である。 According to one embodiment, the first speed is 10 mm/s or less.
 一実施形態によれば、 前記第1速度は5mm/s以下である。 According to one embodiment, the first speed is 5 mm/s or less.
 一実施形態によれば、 前記めっき液は硫酸銅めっき液である。 According to one embodiment, the plating solution is a copper sulfate plating solution.
 一実施形態によれば、 基板をめっきするためのめっき装置であって、 基板を保持するための基板ホルダと、 前記基板をめっきしている間、めっき液とアノードを含むように構成され、前記基板ホルダに保持された前記基板をめっき液中でめっきするめっき槽と、 前記基板ホルダを昇降させる昇降機構と、 前記基板ホルダを傾斜させる傾斜機構と、 少なくとも前記昇降機構及び前記傾斜機構を制御する制御装置と、を備え、 前記制御装置は、前記傾斜機構を制御して、前記めっき槽のめっき液中で前記基板の面が水平から所定の角度で傾くように、前記基板ホルダを傾斜させ、前記昇降機構を制御して、前記基板ホルダを傾斜させた状態で前記基板ホルダの少なくとも一部が前記めっき槽のめっき液の液面から露出する第1高さまで前記基板ホルダを第1速度で上昇させ、その後、前記基板ホルダを前記第1速度より速い第2速度で、前記第1高さより高い第2高さまで上昇させる、めっき装置が提供される。この実施形態は、めっき終了時に基板ホルダの一部がめっき液の液面から露出しており、その位置から、さらに高い第1高さまで第1速度で基板ホルダを上昇させる場合も含むものとする。めっき装置は、例えば、被めっき面を下方に向けて(基板面を概ね水平にして)基板ホルダに保持された基板をめっき液に浸漬させ、めっきするカップ式のめっき装置である。この実施形態によれば、上記実施形態で述べた作用効果のうち少なくとも一部の作用効果を奏する。 According to one embodiment, a plating apparatus for plating a substrate is configured to include a substrate holder for holding a substrate, a plating solution and an anode during plating of the substrate, the A plating bath for plating the substrate held by the substrate holder in a plating solution, an elevating mechanism for elevating the substrate holder, a tilting mechanism for tilting the substrate holder, and at least the elevating mechanism and the tilting mechanism are controlled. a control device, wherein the control device controls the tilting mechanism to tilt the substrate holder so that the surface of the substrate is tilted at a predetermined angle from the horizontal in the plating solution of the plating bath; The elevating mechanism is controlled to elevate the substrate holder at a first speed to a first height where at least part of the substrate holder is exposed from the liquid surface of the plating solution in the plating bath while the substrate holder is tilted. and thereafter raising the substrate holder at a second speed that is higher than the first speed to a second height that is higher than the first height. This embodiment also includes a case where a part of the substrate holder is exposed from the liquid surface of the plating solution at the end of plating, and the substrate holder is raised from that position to a higher first height at the first speed. The plating apparatus is, for example, a cup-type plating apparatus that performs plating by immersing a substrate held in a substrate holder with the surface to be plated facing downward (substantially horizontal) in a plating solution. According to this embodiment, at least some of the effects described in the above embodiment are achieved.
 以上、いくつかの本発明の実施形態について説明してきたが、上記した発明の実施形態は、本発明の理解を容易にするためのものであり、本発明を限定するものではない。本発明は、その趣旨を逸脱することなく、変更、改良され得るとともに、本発明にはその等価物が含まれることは勿論である。また、上述した課題の少なくとも一部を解決できる範囲、または、効果の少なくとも一部を奏する範囲において、特許請求の範囲および明細書に記載された各構成要素の任意の組み合わせ、または、省略が可能である。特許第4719631号明細書(特許文献1)の明細書、特許請求の範囲、図面及び要約書を含む全ての開示は、参照により全体として本願に組み込まれる。 Although several embodiments of the present invention have been described above, the above-described embodiments of the present invention are intended to facilitate understanding of the present invention, and do not limit the present invention. The present invention may be modified and improved without departing from its spirit, and the present invention includes equivalents thereof. In addition, any combination or omission of each component described in the claims and the specification is possible within the range that at least part of the above problems can be solved or at least part of the effect is achieved. is. The entire disclosure, including the specification, claims, drawings and abstract of US Pat. No. 4,719,631 (Patent Document 1) is incorporated herein by reference in its entirety.
400 めっきモジュール
410 めっき槽
412 オーバフロー槽
420 メンブレン
422 カソード領域
424 アノード領域
430 アノード
440 基板ホルダ
442 昇降機構
444 傾斜機構
446 回転機構
450 抵抗体
460 噴射器
Wf 基板
400 plating module 410 plating bath 412 overflow bath 420 membrane 422 cathode region 424 anode region 430 anode 440 substrate holder 442 lifting mechanism 444 tilting mechanism 446 rotating mechanism 450 resistor 460 injector Wf substrate

Claims (12)

  1.  基板をめっきする方法であって、
     基板ホルダに保持された前記基板をめっき槽内のめっき液中でめっきする工程と、
     前記めっき槽のめっき液中で前記基板の面が水平から所定の角度で傾くように、前記基板ホルダを傾斜させる工程と、
     前記基板ホルダを傾斜させた状態で、前記基板ホルダの少なくとも一部が前記めっき槽のめっき液の液面から露出する第1高さまで前記基板ホルダを第1速度で上昇させ、前記基板ホルダ及び/又は前記基板に付着しているめっき液を表面張力により前記液面に吸収させ前記めっき槽にめっき液を回収する工程と、
     前記基板ホルダを前記第1速度より速い第2速度で、前記第1高さより高い第2高さまで上昇させる工程と、
    を含むめっき方法。
    A method of plating a substrate, comprising:
    plating the substrate held by the substrate holder in a plating solution in a plating tank;
    tilting the substrate holder so that the surface of the substrate is tilted at a predetermined angle from the horizontal in the plating solution in the plating tank;
    With the substrate holder being inclined, the substrate holder is raised at a first speed to a first height at which at least part of the substrate holder is exposed from the surface of the plating solution in the plating tank, and the substrate holder and/or Alternatively, a step of absorbing the plating solution adhering to the substrate into the liquid surface by surface tension and recovering the plating solution in the plating tank;
    raising the substrate holder at a second speed that is higher than the first speed to a second height that is higher than the first height;
    plating methods including;
  2.  請求項1に記載のめっき方法において、
     前記第1高さは、前記基板ホルダの全面がめっき液から露出するときの高さである、めっき方法。
    In the plating method according to claim 1,
    The plating method, wherein the first height is a height when the entire surface of the substrate holder is exposed from the plating solution.
  3.  請求項1に記載のめっき方法において、
     前記第1高さは、前記基板ホルダの全面がめっき液から露出するときの高さより低い、めっき方法。
    In the plating method according to claim 1,
    The plating method, wherein the first height is lower than the height when the entire surface of the substrate holder is exposed from the plating solution.
  4.  請求項1に記載のめっき方法において、
     前記第1高さは、前記基板ホルダの全面がめっき液から露出するときの高さより高い、めっき方法。
    In the plating method according to claim 1,
    The plating method, wherein the first height is higher than the height when the entire surface of the substrate holder is exposed from the plating solution.
  5.  請求項1から4の何れかに記載のめっき方法において、
     前記回収する工程と前記第2速度で上昇させる処理との間に、前記基板ホルダを前記第1及び第2速度と異なる1又は複数の速度で上昇させる工程を更に含む、めっき方法。
    In the plating method according to any one of claims 1 to 4,
    The plating method further comprising, between the recovering step and the step of raising at the second speed, raising the substrate holder at one or more speeds different from the first and second speeds.
  6.  請求項1から5の何れかに記載のめっき方法において、
     前記回収する工程において前記基板ホルダを回転させない、めっき方法。
    In the plating method according to any one of claims 1 to 5,
    A plating method, wherein the substrate holder is not rotated in the recovering step.
  7.  請求項1から6の何れかに記載のめっき方法において、
     前記第2速度で前記基板ホルダを上昇させる工程において、前記基板ホルダを回転させる、めっき方法。
    In the plating method according to any one of claims 1 to 6,
    The plating method, wherein in the step of raising the substrate holder at the second speed, the substrate holder is rotated.
  8.  請求項1から7の何れかに記載のめっき方法において、
     前記基板および/又は前記基板ホルダの表面に純水を吹き付け、吹き付け後の純水の一部または全部をめっき槽内に落下させる工程を更に含む、めっき方法。
    In the plating method according to any one of claims 1 to 7,
    The plating method further includes the step of spraying pure water onto the surface of the substrate and/or the substrate holder, and allowing part or all of the sprayed pure water to drop into a plating tank.
  9.  請求項1から8の何れかに記載のめっき方法において、
     前記第1速度は10mm/s以下である、めっき方法。
    In the plating method according to any one of claims 1 to 8,
    The plating method, wherein the first speed is 10 mm/s or less.
  10.  請求項9に記載のめっき方法において、
     前記第1速度は5mm/s以下である、めっき方法。
    In the plating method according to claim 9,
    The plating method, wherein the first speed is 5 mm/s or less.
  11.  請求項1から10の何れかに記載のめっき方法において、
     前記めっき液は硫酸銅めっき液である、めっき方法。
    In the plating method according to any one of claims 1 to 10,
    The plating method, wherein the plating solution is a copper sulfate plating solution.
  12.  基板をめっきするためのめっき装置であって、
     基板を保持するための基板ホルダと、
     前記基板をめっきしている間、めっき液とアノードを含むように構成され、前記基板ホルダに保持された前記基板をめっき液中でめっきするめっき槽と、
     前記基板ホルダを昇降させる昇降機構と、
     前記基板ホルダを傾斜させる傾斜機構と、
     少なくとも前記昇降機構及び前記傾斜機構を制御する制御装置と、
    を備え、
     前記制御装置は、前記傾斜機構を制御して、前記めっき槽のめっき液中で前記基板の面が水平から所定の角度で傾くように、前記基板ホルダを傾斜させ、前記昇降機構を制御して、前記基板ホルダを傾斜させた状態で前記基板ホルダの少なくとも一部が前記めっき槽のめっき液の液面から露出する第1高さまで前記基板ホルダを第1速度で上昇させ、その後、前記基板ホルダを前記第1速度より速い第2速度で、前記第1高さより高い第2高さまで上昇させる、
    めっき装置。
    A plating apparatus for plating a substrate,
    a substrate holder for holding the substrate;
    a plating bath configured to contain a plating solution and an anode for plating the substrate held by the substrate holder in the plating solution during plating of the substrate;
    an elevating mechanism for elevating the substrate holder;
    a tilting mechanism for tilting the substrate holder;
    a control device that controls at least the lifting mechanism and the tilting mechanism;
    with
    The control device controls the tilting mechanism to tilt the substrate holder so that the surface of the substrate is tilted at a predetermined angle from the horizontal in the plating solution in the plating tank, and controls the lifting mechanism. and raising the substrate holder at a first speed to a first height where at least part of the substrate holder is exposed from the surface of the plating solution in the plating bath while the substrate holder is tilted, and then the substrate holder is at a second speed higher than the first speed to a second height higher than the first height;
    Plating equipment.
PCT/JP2021/032624 2021-09-06 2021-09-06 Plating method and plating apparatus WO2023032191A1 (en)

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