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WO2023010680A1 - 共口径双频双极化天线阵列及通信设备 - Google Patents

共口径双频双极化天线阵列及通信设备 Download PDF

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Publication number
WO2023010680A1
WO2023010680A1 PCT/CN2021/122987 CN2021122987W WO2023010680A1 WO 2023010680 A1 WO2023010680 A1 WO 2023010680A1 CN 2021122987 W CN2021122987 W CN 2021122987W WO 2023010680 A1 WO2023010680 A1 WO 2023010680A1
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Prior art keywords
frequency
dielectric substrate
dual
low
antenna unit
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PCT/CN2021/122987
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English (en)
French (fr)
Inventor
曹云飞
章秀银
薛泉
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华南理工大学
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Publication of WO2023010680A1 publication Critical patent/WO2023010680A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/246—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for base stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/30—Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/48—Earthing means; Earth screens; Counterpoises
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
    • H01Q1/523—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas between antennas of an array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10—Resonant slot antennas
    • H01Q13/103—Resonant slot antennas with variable reactance for tuning the antenna
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10—Resonant slot antennas
    • H01Q13/16—Folded slot antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0053—Selective devices used as spatial filter or angular sidelobe filter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/24—Polarising devices; Polarisation filters 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/065—Patch antenna array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/24—Combinations of antenna units polarised in different directions for transmitting or receiving circularly and elliptically polarised waves or waves linearly polarised in any direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/28—Combinations of substantially independent non-interacting antenna units or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/378—Combination of fed elements with parasitic elements
    • H01Q5/392—Combination of fed elements with parasitic elements the parasitic elements having dual-band or multi-band characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/40—Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements
    • H01Q5/42—Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements using two or more imbricated arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/40—Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements
    • H01Q5/45—Imbricated or interleaved structures; Combined or electromagnetically coupled arrangements, e.g. comprising two or more non-connected fed radiating elements using two or more feeds in association with a common reflecting, diffracting or refracting device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/0414—Substantially flat resonant element parallel to ground plane, e.g. patch antenna in a stacked or folded configuration

Definitions

  • the invention relates to a common-aperture dual-frequency dual-polarization antenna array and communication equipment, belonging to the research field of multi-frequency base station antennas in wireless mobile communication.
  • the fifth generation mobile communication (5G) system needs to coexist with 2G/3G/4G systems. Since the 2G/3G/4G base station antenna arrays have been installed, the space left for 5G antennas is very limited.
  • the co-aperture multi-frequency array can solve this problem, which integrates the 5G antenna unit and the 2G/3G/4G antenna unit in the same radiation aperture.
  • the inter-frequency mutual coupling between different frequency units in the public aperture is serious.
  • the interfrequency scattering caused by the induced current on the elements in one frequency band will cause the distortion of the radiation pattern of the elements in the other frequency band.
  • the radiator multiplexing and stacking scheme can integrate multiple components of different frequency bands into the same area of a radiator, so a more compact size can be obtained.
  • the entire structure of the 12 ⁇ 12 substrate-integrated waveguide (SIW) slot array is reused as a 3.5GHz patch radiators to form a common-aperture dual-frequency array.
  • This antenna effectively utilizes the radiation aperture and has high inter-frequency isolation, but this method is not suitable for arrays with a small ratio between high operating frequency and low operating frequency.
  • a common-aperture dual-frequency dual-polarization antenna array is provided, which is more compact than the existing solutions. , maintaining high inter-frequency isolation and stable radiation patterns in dual bands.
  • Another object of the present invention is to provide a communication device.
  • a common-aperture dual-frequency dual-polarization antenna array including a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate and a fifth dielectric substrate arranged in sequence from top to bottom, the first dielectric substrate
  • the substrate, the second dielectric substrate and the third dielectric substrate constitute a dielectric substrate group, and a low-frequency antenna unit and four high-frequency antenna units are arranged on the dielectric substrate group, and a filter structure is loaded on the low-frequency antenna unit, and the low-frequency antenna unit and the high-frequency antenna unit are both fed by a coaxial line, and the fourth dielectric substrate and the fifth dielectric substrate form a dual-function metasurface, and when the dual-function metasurface is used as an artificial magnetic conductor reflector, it enhances the low frequency in the low profile
  • the radiation of the antenna unit is used as a frequency selective surface to suppress the electromagnetic scattering of the low frequency antenna unit in the high frequency band.
  • the low-frequency antenna unit includes a low-frequency full-wavelength radiation slot and two low-frequency step impedance feeders
  • the low-frequency full-wavelength radiation slot is arranged on the first floor on the upper surface of the third dielectric substrate, and the low-frequency full-wavelength radiation slot and the first floor are bent downward, and four pairs of open-circuit coupled microstrip lines are arranged in the low-frequency full-wavelength radiation gap, and the four pairs of open-circuit coupled microstrip lines are respectively connected to the first floor, and two low-frequency step impedance feeders are arranged crosswise
  • the low-frequency full-wavelength radiation slots are fed through two low-frequency step impedance feeders to achieve low-frequency ⁇ 45° dual-polarized radiation; each low-frequency step impedance feeder is provided with A quarter-wavelength start microstrip stub, the open-circuit coupled microstrip line and the quarter-wavelength start microstrip stub form a filtering structure.
  • each low-frequency step impedance feeder is connected to the first floor through a metallized via hole, and the other end is connected to the first feed pad on the first floor through a metallized via hole.
  • the disk is connected to the first coaxial inner conductor pin of the low-frequency antenna unit, and the first coaxial outer conductor is connected to the first ground pad on the lower surface of the third dielectric substrate and the second ground pad on the lower surface of the fifth dielectric substrate.
  • the first ground pad is connected to the first floor through a metallized via hole.
  • the low-frequency full-wavelength radiation slot is a cross-shaped radiation slot, the four sides of the cross-shaped radiation slot and the four sides of the first floor are bent downwards, and the vertical part of the cross-shaped radiation slot forms an arrow shape, two of which A pair of open-circuit coupled microstrip lines is arranged symmetrically at the front and rear horizontal parts of the cross-shaped radiation slot, and the other two pairs of coupled microstrip lines are symmetrically arranged at the front and rear horizontal parts of the cross-shaped radiation slot.
  • Each low-frequency step impedance feeder is a bent feeder electric wire.
  • each high-frequency antenna unit includes a laminated patch, an excitation patch and a pair of high-frequency feeders, four laminated patches of four high-frequency antenna units, four excitation patches and four pairs of high-frequency
  • the feeding lines have a one-to-one correspondence relationship.
  • Each laminated patch is set on the upper surface of the first dielectric substrate
  • each excitation patch is set on the upper surface of the second dielectric substrate
  • each pair of high-frequency feeding lines is set on the second dielectric substrate.
  • the lower surface of the dielectric substrate feeds the corresponding excitation patch through each pair of high-frequency feed lines to achieve ⁇ 45° dual-polarized radiation in the high-frequency band.
  • each excitation patch is provided with four mutually symmetrical square slits.
  • each pair of high-frequency feed lines includes two intersecting H-shaped microstrip lines, and the corresponding excitation patches are fed through the two H-shaped microstrip lines to achieve ⁇ 45° dual-polarized radiation in the high-frequency band ;
  • Each H-shaped microstrip line is connected to the second feed pad on the upper surface of the second dielectric substrate through a metal via hole, and the second feed pad is connected to the conductor pin in the second coaxial line of the high-frequency antenna unit
  • the outer conductor of the second coaxial line is connected to the second grounding pad on the lower surface of the third dielectric substrate and the second floor on the lower surface of the fifth dielectric substrate, and the second grounding pad is connected through a metallization process.
  • the holes are connected to the first floor on the upper surface of the third dielectric substrate.
  • the upper surface of the fourth dielectric substrate is provided with N ⁇ N periodic patch units, and each periodic patch unit is provided with four first square annular grooves that are symmetrical to each other.
  • the second floor on the lower surface of the five-dielectric substrate is provided with a second square annular groove at the corresponding position of the first square annular groove, where N ⁇ 2 and is a natural number.
  • a communication device includes the above-mentioned common-aperture dual-frequency dual-polarization antenna array.
  • the present invention has the following beneficial effects:
  • the present invention sets a low-frequency antenna unit operating at 0.69-0.96GHz and four high-frequency antenna units operating at 3.4-3.7GHz, and by loading a filter structure on the low-frequency antenna unit, the low-frequency antenna unit is reduced in the high-frequency band.
  • the dual-functional metasurface can be used as an artificial magnetic conductor reflector in a low profile to enhance the radiation of a low-frequency slot antenna, It has band-pass transmission performance as a frequency selective surface in the high frequency band, and suppresses the electromagnetic scattering of the low frequency antenna unit in the high frequency band, thereby reducing the negative impact of the low frequency antenna unit on the radiation pattern of the high frequency antenna unit, making the high frequency antenna unit Radiation pattern distortion reduced.
  • each low-frequency step impedance feeder is provided with a microstrip stub at the beginning of a quarter wavelength.
  • the coupled microstrip line and the quarter-wavelength microstrip stub constitute a filtering structure to realize the filtering function of the low-frequency antenna unit and effectively suppress its out-of-band radiation in the high-frequency band 3.2-3.8GHz, thereby reducing inter-frequency coupling .
  • the low-frequency full-wavelength radiation slot of the low-frequency antenna unit of the present invention and the first floor on the upper surface of the third dielectric substrate are bent downward, because the first floor is transformed from a two-dimensional (2D) plane to a three-dimensional (3D) bent shape , the overall size of the antenna array was reduced for miniaturization, and the overall size was reduced by 57.4%.
  • FIG. 1 is an exploded view of a common-aperture dual-frequency dual-polarization antenna array provided by an embodiment of the present invention.
  • FIG. 2 is a side view of a common-aperture dual-frequency dual-polarization antenna array provided by an embodiment of the present invention.
  • Fig. 3 is a three-dimensional structural view of the low-frequency antenna unit provided by the embodiment of the present invention (the vertical substrate is transparent).
  • Fig. 4 is a schematic diagram of the geometry of the feeding network of the low-frequency antenna unit on the lower surface of the third-layer dielectric substrate provided by the embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a laminated patch of a high-frequency antenna unit on the upper surface of a first-layer dielectric substrate provided by an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of an excitation patch of a high-frequency antenna unit on the upper surface of a second-layer dielectric substrate provided by an embodiment of the present invention.
  • Fig. 7 is a schematic diagram of a high-frequency feeding line of a high-frequency antenna unit on the lower surface of a second-layer dielectric substrate provided by an embodiment of the present invention.
  • Fig. 8 is a schematic diagram of a dual-functional metasurface provided by an embodiment of the present invention.
  • Fig. 9 is a comparison diagram of the peak gain curves in the high frequency band between the common-aperture dual-frequency dual-polarized antenna array provided by the embodiment of the present invention and the common antenna without filter structure.
  • Fig. 10 is a comparison diagram of the isolation curves of different frequency ports in the high frequency band between the common-aperture dual-frequency dual-polarization antenna array provided by the embodiment of the present invention and the common antenna without filter structure.
  • Fig. 11 is a low-frequency and high-frequency reflection and transmission coefficient curve diagram of the dual-functional metasurface provided by the embodiment of the present invention.
  • Fig. 12 is a reflection phase curve diagram of the low-frequency band of the dual-functional metasurface provided by the embodiment of the present invention.
  • FIG. 13 is a two-dimensional gain comparison diagram at 3.7 GHz between the co-aperture dual-frequency dual-polarization antenna array provided by the embodiment of the present invention and the antenna using a flat metal reflector and a traditional AMC surface.
  • Fig. 14 is a comparison diagram of the peak gain of the common-aperture dual-frequency dual-polarized antenna array provided by the embodiment of the present invention and the antenna using a flat metal reflector and a traditional AMC surface.
  • Fig. 15 is a comparison diagram of different-frequency port isolation curves between the common-aperture dual-frequency dual-polarized antenna array provided by the embodiment of the present invention and the antenna using a flat metal reflector and a traditional AMC surface.
  • FIG. 16 is a test result diagram of reflection coefficients of all ports of the co-aperture dual-frequency dual-polarized antenna array provided by the embodiment of the present invention.
  • FIG. 17 is a test result diagram of the polarization coupling degree of each unit of the co-aperture dual-frequency dual-polarized antenna array provided by the embodiment of the present invention.
  • Fig. 18 is a test result diagram of the in-band coupling degree of the high-frequency antenna unit of the antenna array provided by the embodiment of the present invention.
  • FIG. 19 is a test result diagram of the degree of inter-frequency coupling of the antenna array provided by the embodiment of the present invention.
  • Fig. 20 is a two-dimensional radiation pattern at 0.69 GHz through the ninth excitation port of the low-frequency antenna unit provided by the embodiment of the present invention.
  • Fig. 21 is a two-dimensional radiation pattern at 0.96 GHz of the low-frequency antenna unit provided by the embodiment of the present invention through the ninth excitation port.
  • Fig. 22 is a two-dimensional radiation pattern at 3.4 GHz of the high-frequency antenna unit provided by the embodiment of the present invention through the first excitation port.
  • Fig. 23 is a two-dimensional radiation pattern at 3.7 GHz of the high-frequency antenna unit provided by the embodiment of the present invention through the first excitation port.
  • Fig. 24 is a test result diagram of the peak gain obtained through the first excitation port, the second excitation port, the ninth excitation port and the tenth excitation port of the co-aperture dual-frequency dual-polarization antenna array provided by the embodiment of the present invention.
  • the following and the accompanying drawings will take the co-aperture dual-frequency dual-polarization antenna array based on the filter slot antenna and the dual-function metasurface as an example to illustrate the co-aperture dual-frequency dual-polarization antenna array provided by the embodiment of the present invention. It should be understood that the embodiment of the present invention is not limited to the common-aperture dual-frequency dual-polarized antenna array based on the filter slot antenna and dual-function metasurface, but should include all common-aperture dual-frequency dipole antenna arrays with the characteristics of the present invention Antenna arrays.
  • the common-aperture dual-frequency dual-polarization antenna array of this embodiment includes five layers of dielectric substrates, and the five layers of dielectric substrates are respectively the first dielectric substrate 1, the second dielectric substrate 2, and the third dielectric substrate 3.
  • the fourth dielectric substrate 4 and the fifth dielectric substrate 5, the first dielectric substrate 1, the second dielectric substrate 2, the third dielectric substrate 3, the fourth dielectric substrate 4 and the fifth dielectric substrate 5 are arranged sequentially from top to bottom,
  • the first dielectric substrate 1, the second dielectric substrate 2, and the third dielectric substrate 3 constitute a dielectric substrate group, and a low-frequency antenna unit and four high-frequency antenna units are arranged on the dielectric substrate group, and the low-frequency antenna unit operates at 0.69-0.96GHz, Each high-frequency antenna unit works at 3.4-3.7GHz.
  • the low-frequency antenna unit is loaded with a filter structure, which can reduce the out-of-band radiation of the low-frequency antenna unit in the high-frequency band and reduce cross-frequency coupling.
  • the low-frequency antenna unit and the high-frequency antenna unit are both Coaxial cable (also known as coaxial cable) is used for feeding.
  • the coaxial cable of the low-frequency antenna unit is the first coaxial cable, and both the first coaxial cable and the second coaxial cable pass through the third dielectric substrate 3 and the fourth dielectric substrate. 4 and the fifth dielectric substrate 5, the coaxial line of the high-frequency antenna unit is the second coaxial line, and the fourth dielectric substrate 4 and the fifth dielectric substrate 5 form a dual-function metasurface.
  • the first dielectric substrate 1, the second dielectric substrate 2, and the third dielectric substrate 3 use Rogers 4003 dielectric substrates with a thickness of 1.524 mm or 0.813 mm
  • the fourth dielectric substrate 4 and fifth dielectric substrate 5 use Rogers 4003 dielectric substrates.
  • the thickness can be 1.524mm
  • the distance between the first layer of dielectric substrate 1 and the second layer of dielectric substrate 2 is 5mm
  • the distance between the second layer of dielectric substrate 2 and the third layer of dielectric substrate 3 is 1mm.
  • the air gap there is an air gap with a thickness of 12 mm between the fourth dielectric substrate 4 and the fifth dielectric substrate 5, and the distance between adjacent high-frequency antenna units is 20 mm (about 0.24 ⁇ c ).
  • the low-frequency antenna unit, the high-frequency antenna unit and the dual-function metasurface are described in detail below in conjunction with FIGS. 1 to 8 .
  • a low-frequency full-wavelength radiation slit 33 is etched on the first floor 34 on the upper surface (top surface) of the third dielectric substrate 3, and a first feed pad 32 is arranged on the first floor 34, and the low-frequency The full-wavelength radiation slit 33 and the first floor 34 are bent downwards.
  • the third dielectric substrate 3 Two low-frequency step impedance feeders 38 are printed on the lower surface (bottom surface), and the lower surface of the third dielectric substrate 3 is provided with a first ground pad 36 and a second ground pad 37, and the first ground pad 36 is a low-frequency
  • the grounding pad, the second grounding pad 37 is a high-frequency grounding pad, two low-frequency step impedance feeders 38 cross each other, and each low-frequency step impedance feeder 38 is a bent-shaped feeder, which can reduce the size, and the low-frequency
  • the full-wavelength radiation slot 33 and the two low-frequency step impedance feeders 38 constitute the main part of the low-frequency antenna unit, and the low-frequency full-wavelength radiation slot 33 is fed through the two low-frequency step impedance feeder lines 38 to realize low-frequency ⁇
  • the 45° dual-polarized radiation adopts the low-frequency full-wave
  • Each low-frequency step impedance feeder 38 is provided with a quarter-wavelength starting microstrip stub 35, that is, there are two quarter-wavelength starting microstrip stubs 35, forming a pair of quarter-wavelength Open-ended microstrip stub 35, quarter-wavelength open-ended microstrip stub 35 extends from low-frequency step impedance feed line 38 to suppress high-frequency resonance, open-circuit coupled microstrip line 31 and quarter-wavelength open-ended microstrip
  • the stub 35 constitutes a filter structure to realize the filter function and effectively suppress its out-of-band radiation in the high frequency band 3.2-3.8 GHz, thereby reducing inter-frequency coupling.
  • the low-frequency full-wavelength radiation slot 33 is a cross-shaped radiation slot, and the four sides of the cross-shaped radiation slot and the four sides of the first floor 34 are bent downward, so that the cross-shaped radiation slot is divided into horizontal parts (a total of four left, right, front, and rear) horizontal part) and vertical part (four vertical parts in total around the front and back), the vertical part of the cross-shaped radiation slot forms an arrow shape to further reduce the size, and two pairs of open-circuit coupled microstrip lines 31 are symmetrically arranged on the cross-shaped radiation slot In the front and back horizontal parts, the other two pairs of coupled microstrip lines 31 are symmetrically arranged in the front and back horizontal parts of the cross-shaped radiation slot.
  • each low-frequency step impedance feeder 38 is connected to the first floor 34 through a metallized via hole, and the other end is connected to the first feed pad 32 on the first floor 34 through a metallized via hole.
  • the feed pad 32 is connected to the pin of the inner conductor of the first coaxial line
  • the outer conductor of the first coaxial line is connected to the first grounding pad 36 on the lower surface of the third dielectric substrate 3
  • the second ground pad on the lower surface of the fifth dielectric substrate 5 . 6 are connected by soldering
  • the first ground pad 36 is connected to the first floor 34 through a metallized via hole.
  • each pair of high-frequency The feeder line includes two high-frequency feeder lines, that is, there are eight high-frequency feeder lines in total, and the eight high-frequency feeder lines are respectively the first high-frequency feeder line 261, the second high-frequency feeder line 262, the third high-frequency feeder line 263, the third high-frequency feeder line Four high-frequency feeder lines 264, the fifth high-frequency feeder line 265, the sixth high-frequency feeder line 266, the seventh high
  • the eight high-frequency feed lines are all H-shaped microstrip lines, the first high-frequency feed line 261 and the second high-frequency feed line 262 cross each other, the third high-frequency feed line 263 and the fourth high-frequency feed line 264 intersect each other.
  • the fifth high-frequency feeder line 265 and the sixth high-frequency feeder line 266 cross each other, and the seventh high-frequency feeder line 267 and the eighth high-frequency feeder line 268 cross each other.
  • each high-frequency feeder is connected to the second feeder pad on the upper surface of the second dielectric substrate 2 through a metal via hole, the second feeder pad is connected to the conductor pin in the second coaxial line, and the second coaxial line
  • the outer conductor of the axis is connected to the second grounding pad 37 on the lower surface of the third dielectric substrate 3 and the second floor 6 on the lower surface of the fifth dielectric substrate 4 by welding, and the second grounding pad 37 is connected through a metallization process.
  • the hole is connected to the first floor 34 on the upper surface of the third dielectric substrate 3 .
  • first port 251, the third port 253, the fifth port 255 and the seventh port 257 excite -45° polarized radiation in the high frequency band
  • second port 252, the fourth port 254, the sixth port 256 and the eighth port 258 excites 45° polarized radiation in the high frequency band
  • the ninth port 321 and the tenth port 322 respectively excite ⁇ 45° and 45° polarized radiation in the low frequency band.
  • this embodiment designs a dual-function metasurface composed of a fourth-layer dielectric substrate 4 and a fifth-layer dielectric substrate 5.
  • Two functions 1) as an artificial magnetic conductor (Artificial Magnetic Conductor, referred to as AMC) reflector, reflecting low-frequency electromagnetic waves when the low-frequency antenna unit achieves a low profile, that is, to enhance the radiation of the low-frequency antenna unit in the low profile; 2) as a band Frequency Selective Surface (FSS) realizes the bandpass transmission of electromagnetic waves in the high frequency band, suppresses the electromagnetic scattering of the low frequency antenna unit in the high frequency band, thereby reducing the negative effect of the low frequency antenna unit on the radiation pattern of the high frequency antenna unit Influence.
  • AMC artificial Magnetic Conductor
  • FSS band Frequency Selective Surface
  • the upper surface (top surface) of the fourth dielectric substrate 4 is provided with 5 ⁇ 5 periodic patch units 7, and four first square annular grooves 71 symmetrical to each other are etched on each periodic patch unit.
  • four first square annular grooves 71 are periodically arranged on the upper surface of the fourth dielectric substrate 4
  • the second floor 6 on the lower surface (bottom surface) of the fifth dielectric substrate 5 is a supersurface floor
  • the second floor 6 is on the
  • the second square annular groove 61 is etched on the corresponding position of the first square annular groove.
  • the position and size of the second square annular groove 61 and the first square annular groove 71 are exactly the same, and they are also periodically arranged.
  • FIGS 9 to 10 they are the comparison charts of peak gain curves in the high frequency band and the comparison charts of different frequency port isolation curves between the common-aperture dual-frequency dual-polarization antenna array provided by this embodiment and the common antenna without filter structure , wherein the filterless structure antenna is completed by removing two quarter-wavelength start-end microstrip stubs 35 and four pairs of open-circuit coupled microstrip lines 31 from the low-frequency antenna unit provided by the embodiment; it can be clearly seen that , the peak gain achieved by the antenna array proposed in this embodiment is greatly reduced in the 3.4-3.55GHz frequency band; and the amplitude of the inter-frequency port coupling is less than -35dB, which is much lower than that of the non-filtering structure; therefore, the pass band The external suppression performance greatly improves the isolation of different frequency ports.
  • FIGs 11 to 12 they are respectively low-frequency and high-frequency reflection and transmission coefficient curves and low-frequency reflection phase curves of the dual-function metasurface provided in this embodiment.
  • the magnitude of the reflection coefficient in the 0.69-0.96GHz frequency band is higher than -0.5dB, and the reflection phase in Fig. 12 ranges from 43.7° to -69.6°, which means that the metasurface can be used as an artificial magnetic conductor reflector and used in low profile
  • the antenna realizes a unidirectional radiation pattern; the transmission coefficient amplitude of the 3.4-3.7GHz frequency band in Figure 12 is about -0.3dB, which indicates that the metasurface can play the role of a frequency selective surface, allowing high-frequency radiated electromagnetic waves to pass through.
  • FIGS 13 to 15 are the two-dimensional gain comparison diagrams and peak gain ratios at 3.7GHz of the co-aperture dual-frequency dual-polarized antenna array provided in this embodiment and the antenna using a flat metal reflector and a traditional AMC surface. Comparison chart and comparison chart of inter-frequency port isolation curves.
  • the antenna array proposed in this embodiment has a The peak gain is reduced by about 5.5dB, and the inter-frequency coupling degree is reduced by less than 6.59dB; compared with the traditional AMC antenna, the peak gain achieved by the antenna array proposed in this embodiment is reduced by about 10.2dB at 3.65GHz, Inter-frequency port coupling is reduced by about 11dB.
  • FIG 16 it is a test result diagram of the reflection coefficients of all ports of the co-aperture dual-frequency dual-polarized antenna array provided by the embodiment. It can be seen that when the low-frequency antenna unit works in the 0.653-0.971GHz frequency band, the reflection coefficient is lower than -10dB; when the high-frequency antenna unit works in the 3.32-3.62GHz frequency band, the reflection coefficient is lower than -10dB.
  • the test result diagram of the polarization coupling degree of each unit of the co-aperture dual-frequency dual-polarized antenna array provided in this embodiment shows that the polarization of the low-frequency antenna unit in the 0.69-0.96GHz frequency band The isolation is higher than 25dB; the polarization isolation of the high-frequency antenna unit in the 3.4-3.7GHz frequency band is higher than 30dB.
  • the test result diagram of the high-frequency antenna unit in-band coupling degree of the antenna array provided by this embodiment shows that in the 3.4-3.7GHz frequency band, the in-band isolation between the high-frequency antenna units higher than 20dB.
  • the test result diagram of the inter-frequency coupling degree of the antenna array provided in this embodiment shows that the inter-frequency port isolation between the low-frequency antenna unit and the high-frequency antenna unit is as high as 0.69-0.96 GHz At 34dB and above 32dB in 3.4-3.7GHz.
  • the two-dimensional radiation pattern at 0.69GHz and the two-dimensional radiation pattern at 0.96GHz through the ninth excitation port of the low-frequency antenna unit provided in this embodiment are respectively, and the ninth excitation port
  • the low-frequency radiation patterns of 321 and the tenth excitation port 322 are similar. Therefore, only the radiation pattern of the ninth excitation port 321 in the low-frequency range is selected. It can be seen that the low-frequency antenna unit has a stable side-firing radiation pattern, and there will be no radiation pattern in the working frequency band. Distortion of the pattern is generated, while the 3dB beam range corresponding to the ninth excitation port 321 is 73° to 79°, and the cross polarization level is less than -15dB.
  • the high-frequency antenna unit has a stable side-firing radiation pattern, which is within the working frequency band. No pattern distortion will be generated, the 3dB beam range of the first port 251 is 76° to 84°, and the cross polarization level of high frequency is less than -15dB.
  • the test results of the peak gain obtained through the first excitation port, the second excitation port, the ninth excitation port and the tenth excitation port of the co-aperture dual-frequency dual-polarization antenna array provided by the embodiment of the present invention
  • the gain of the first excitation port 251 and the second excitation port 252 are selected to represent the -45° and 45° polarization radiation of the high frequency antenna unit
  • the measured peak gain of the low frequency antenna unit is 7.0 to 7.7 in the range of 0.69-0.96GHz dBi
  • the high-frequency antenna unit is 6.3 to 7.9dBi in the range of 3.4-3.7GH
  • the peak gain corresponding to each port fluctuates less in their respective working frequency bands.
  • This embodiment also provides a communication device, which is a transmitting and receiving device of a wireless communication system, and includes the above-mentioned common-aperture dual-frequency dual-polarization antenna array.
  • the present invention sets a low-frequency antenna unit operating at 0.69-0.96GHz and four high-frequency antenna units operating at 3.4-3.7GHz, and by loading a filter structure on the low-frequency antenna unit, the low-frequency antenna unit is reduced.
  • Out-of-band radiation in the high-frequency band reduces inter-frequency coupling;
  • the dual-functional metasurface can be used as an artificial magnetic conductor reflector in a low profile to enhance a low-frequency slot antenna It has band-pass transmission performance as a frequency selective surface in the high frequency band, and suppresses the electromagnetic scattering of the low frequency antenna unit in the high frequency band, thereby reducing the negative impact of the low frequency antenna unit on the radiation pattern of the high frequency antenna unit, making the high frequency Distortion of the radiation pattern of the antenna element is reduced.

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Abstract

本发明公开了一种共口径双频双极化天线阵列及通信设备，该天线阵列包括自上而下依次设置的第一介质基板、第二介质基板、第三介质基板、第四介质基板和第五介质基板，所述第一介质基板、第二介质基板和第三介质基板构成介质基板组，所述介质基板组上设置有一个低频天线单元和四个高频天线单元，所述低频天线单元上加载有滤波结构，低频天线单元和高频天线单元均采用同轴线馈电，所述第四介质基板和第五介质基板构成一个双功能超表面，所述双功能超表面作为人工磁导体反射器时在低剖面内增强低频天线单元的辐射，作为频率选择表面时抑制低频天线单元在高频段的电磁散射。本发明相比于现有的方案更紧凑，在双波段内保持高异频隔离和稳定的辐射模式。

Description

共口径双频双极化天线阵列及通信设备 技术领域
本发明涉及一种共口径双频双极化天线阵列及通信设备，属于无线移动通信方面的多频基站天线研究领域。
背景技术
为了满足用户多样化需求，第五代移动通信(5G)系统需要与2G/3G/4G系统共存。由于2G/3G/4G基站天线阵列已经安装完毕，留给5G天线的空间非常有限。共口径多频阵列可以解决这个问题，它将5G天线单元与2G/3G/4G天线单元集成在相同的辐射口径中。然而，它正面临着巨大的设计挑战。公共口径内不同频率单元之间的异频互耦严重。一个频段的单元上由感应电流引起的异频散射会导致另一个频段单元辐射方向图的畸变。
考虑到共口径多频阵列的重要性，许多研究人员基于多种方案对其进行了研究，包括并行分离排布式、嵌套式、交错排布式、辐射体复用式、层叠式。文献《L.Zhao,K.W.Qian,and K.L.Wu,“A cascaded coupled resonator decoupling network for mitigating interference between two radios in adjacent frequency bands,”IEEE Trans.Microw.Theory Tech.,vol.62,no.11,pp.2680-2688,Nov.2014.》中使用并行分离排布式方案，工作在不同频段的两个天线单元彼此靠近放置，以覆盖双频段。但是，并行分离排布式方案仍然需要很大的空间。例如为了减少异频互耦，该文献中设计的解耦网络就增加了结构复杂度，不易扩展到海量的天线阵列中。文献《R.Wu and Q.Chu,“A compact,dual-polarized multiband array for 2G/3G/4G base stations,”IEEE Trans.Antennas Propag.,vol.67,no.4,pp.2298-2304,Apr.2019.》使用嵌入式方案，高频偶极子放置在低频碗形偶极子内部，以在一个公共口径中覆盖双频段。然而，其天线单元间距太大了，约为0.95λ c(λ c是中心工作频率处的自由空间波长)。在文献《H.Sun,C.Ding,H.Zhu,B.Jones,and Y.J.Guo,“Suppression of cross-band scattering in multiband antenna arrays,”IEEE Trans.Antennas Propag.,vol.67,no.4,pp.2379-2389,Apr.2019.》使用的交错方案中，低频偶极子天线交错在高频偶极子的中间，并且射频(RF)扼流圈放置在低频单元的辐射器上，以抑制感应的高频散射电流，从而减少辐射模式失真。
与上述三种方案相比，辐射器复用和堆叠方案可以将不同频段的多个原件集成到一个辐射器的同一个区域中，因此可以获得更紧凑的尺寸。文献《J.F.Zhang,Y.J.Cheng,Y.R.Ding,and C.X.Bai,“A dual-band shared-aperture antenna with large frequency ratio,high aperture reuse efficiency,and high channel isolation,”IEEE Trans.Antennas Propag., vol.67,no.2,pp.853-860,Feb.2019.》使用辐射器复用方案，在60GHz下，12×12衬底集成波导(SIW)缝隙阵列的整个结构被重复利用，作为3.5GHz的贴片辐射器，以形成一个共口径双频阵列。这种天线有效地利用了辐射口径，具有高异频隔离度，但这种方法不适用于高工作频率与低工作频率之比较小的阵列。文献《Y.Zhu,Y.Chen,and S.Yang,“Decoupling and low-profile design of dual-band dual-polarized base station antennas using frequency-selective surface,”IEEE Trans.Antennas Propag.,vol.67,no.8,pp.5272-5281,Aug.2019》使用堆叠方案，在其设计的双频段阵列中，低频和高频天线单元之间插入了一个频率选择表面(FSS)以减少异频互耦。然而，由于多个组件的集成，整个天线阵列的体积很大。
发明内容
本发明的目的是为了克服上述现有技术的缺点与不足，在5G基站的应用背景下，提供了一种共口径双频双极化天线阵列，该天线阵列相比于现有的方案更紧凑，在双波段内保持高异频隔离和稳定的辐射模式。
本发明的另一目的在于提供一种通信设备。
本发明的目的可以通过采取如下技术方案达到：
一种共口径双频双极化天线阵列，包括自上而下依次设置的第一介质基板、第二介质基板、第三介质基板、第四介质基板和第五介质基板，所述第一介质基板、第二介质基板和第三介质基板构成介质基板组，所述介质基板组上设置有一个低频天线单元和四个高频天线单元，所述低频天线单元上加载有滤波结构，低频天线单元和高频天线单元均采用同轴线馈电，所述第四介质基板和第五介质基板构成一个双功能超表面，所述双功能超表面作为人工磁导体反射器时在低剖面内增强低频天线单元的辐射，作为频率选择表面时抑制低频天线单元在高频段的电磁散射。
进一步的，所述低频天线单元包括低频全波长辐射缝隙和两条低频阶跃阻抗馈电线，所述低频全波长辐射缝隙设置在第三介质基板上表面的第一地板上，低频全波长辐射缝隙和第一地板向下弯折，且低频全波长辐射缝隙内设置有四对开路耦合微带线，四对开路耦合微带线分别与第一地板相连，两条低频阶跃阻抗馈电线交叉设置在第三介质基板的下表面，通过两条低频阶跃阻抗馈电线对低频全波长辐射缝隙进行馈电，以实现低频段±45°双极化辐射；每条低频阶跃阻抗馈电线设置有一条四分之一波长开端微带短截线，所述开路耦合微带线和四分之一波长开端微带短截线构成滤波结构。
进一步的，每条低频阶跃阻抗馈电线的一端通过金属化过孔与第一地板相连，另一端通过金属化过孔与第一地板上的第一馈电焊盘相连，所述第一馈电焊盘与低频天线单元的第一同轴线内导体引脚相连，所述第一同轴线外导体与第三介质基板下表面上的第一接地焊盘、第五介质基板下表面上的第二地板相连，所述第一接地焊盘通过 金属化过孔与第一地板相连。
进一步的，所述低频全波长辐射缝隙为十字形辐射缝隙，所述十字形辐射缝隙的四侧和第一地板的四侧向下弯折，十字形辐射缝隙的垂直部分形成箭头形状，其中两对开路耦合微带线对称设置在十字形辐射缝隙的前后水平部分，另外两对耦合微带线对称设置在十字形辐射缝隙的前后水平部分，每条低频阶跃阻抗馈电线为弯折形馈电线。
进一步的，每个高频天线单元包括一个层叠贴片、一个激励贴片和一对高频馈电线，四个高频天线单元的四个层叠贴片、四个激励贴片和四对高频馈电线为位置一一对应的关系，每个层叠贴片设置在第一介质基板的上表面，每个激励贴片设置在第二介质基板的上表面，每对高频馈电线设置在第二介质基板的下表面，通过每对高频馈电线对相应的激励贴片进行馈电，以实现高频段±45°双极化辐射。
进一步的，每个层叠贴片的四周放置有四个对称的全波长环形微带线。
进一步的，每个激励贴片上设置有四个相互中心对称的方形缝隙。
进一步的，每对高频馈电线包括两条相互交叉的H形微带线，通过两条H形微带线对相应的激励贴片进行馈电，以实现高频段±45°双极化辐射；每条H形微带线通过金属过孔与第二介质基板上表面上的第二馈电焊盘相连，所述第二馈电焊盘与高频天线单元的第二同轴线内导体引脚相连，所述第二同轴线外导体与第三介质基板下表面上的第二接地焊盘、第五介质基板下表面上的第二地板相连，所述第二接地焊盘通过金属化过孔与第三介质基板上表面上的第一地板相连。
进一步的，所述第四介质基板的上表面设置有N×N个周期性贴片单元，每个周期性贴片单元上设置有四个相互中心对称的第一方形环形槽，所述第五介质基板下表面上的第二地板在第一方形环形槽的相应位置上设置有第二方形环形槽，其中N≥2，且为自然数。
本发明的另一目的可以通过采取如下技术方案达到：
一种通信设备，包括上述的共口径双频双极化天线阵列。
本发明相对于现有技术具有如下的有益效果：
1、本发明设置了一个工作在0.69-0.96GHz的低频天线单元以及四个工作在3.4-3.7GHz的高频天线单元，并且通过在低频天线单元上加载滤波结构，降低低频天线单元在高频段的带外辐射，减少异频耦合；此外，使用双功能超表面抑制异频互耦合和散射的方法，双功能超表面可以在低剖面内作为人工磁导体反射器增强低频段缝隙天线的辐射，它在高频段作为频率选择表面具有带通传输性能，并抑制低频天线单元在高频段的电磁散射，从而减小低频天线单元对高频天线单元辐射方向图的负面影响，使 得高频天线单元的辐射方向图失真减少。
2、本发明的低频天线单元中，低频全波长辐射缝隙内设置有四对开路耦合微带线，每条低频阶跃阻抗馈电线设置有一条四分之一波长开端微带短截线，开路耦合微带线和四分之一波长开端微带短截线构成滤波结构，以实现低频天线单元的滤波功能，有效抑制其在高频段3.2-3.8GHz的带外辐射，从而减小异频耦合。
3、本发明的低频天线单元的低频全波长辐射缝隙和第三介质基板上表面的第一地板向下弯折，由于第一地板从二维(2D)平面变换为三维(3D)弯折形状，减小了天线阵列的整体尺寸，以实现小型化，整体尺寸减小了57.4％。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的共口径双频双极化天线阵列的分解图。
图2为本发明实施例提供的共口径双频双极化天线阵列的侧视图。
图3为本发明实施例提供的低频天线单元的三维结构视图(垂直基板是透明的)。
图4为本发明实施例提供的第三层介质基板下表面上低频天线单元的馈电网络的几何形状示意图。
图5为本发明实施例提供的第一层介质基板上表面上高频天线单元的层叠贴片示意图。
图6为本发明实施例提供的第二层介质基板上表面上高频天线单元的激励贴片示意图。
图7为本发明实施例提供的第二层介质基板下表面上高频天线单元的高频馈电线示意图。
图8为本发明实施例提供的双功能超表面示意图。
图9为本发明实施例提供的共口径双频双极化天线阵列与普通无滤波结构的天线在高频段的峰值增益曲线对比图。
图10为本发明实施例提供的共口径双频双极化天线阵列与普通无滤波结构的天线在高频段的异频端口隔离度曲线对比图。
图11为本发明实施例提供的双功能超表面的低频和高频的反射和传输系数曲线 图。
图12为本发明实施例提供的双功能超表面的低频段的反射相位曲线图。
图13为本发明实施例提供的共口径双频双极化天线阵列与使用平面金属反射板、传统AMC表面的天线在3.7GHz下的二维增益对比图。
图14为本发明实施例提供的共口径双频双极化天线阵列与使用平面金属反射板、传统AMC表面的天线的峰值增益对比图。
图15为本发明实施例提供的共口径双频双极化天线阵列与使用平面金属反射板、传统AMC表面的天线的异频端口隔离度曲线对比图。
图16为本发明实施例提供的共口径双频双极化天线阵列的所有端口反射系数的测试结果图。
图17为本发明实施例提供的共口径双频双极化天线阵列的每个单元极化耦合度的测试结果图。
图18为本发明实施例提供的天线阵列的高频天线单元带内耦合度的测试结果图。
图19为本发明实施例提供的天线阵列的异频耦合度的测试结果图。
图20为本发明实施例提供的低频天线单元通过第九激励端口在0.69GHz处的二维辐射方向图。
图21为本发明实施例提供的低频天线单元通过第九激励端口在0.96GHz处的二维辐射方向图。
图22为本发明实施例提供的高频天线单元通过第一激励端口在3.4GHz处的二维辐射方向图。
图23为本发明实施例提供的高频天线单元通过第一激励端口在3.7GHz处的二维辐射方向图。
图24为本发明实施例提供的共口径双频双极化天线阵列通过第一激励端口、第二激励端口、第九激励端口和第十激励端口得到的峰值增益的测试结果图。
其中，1-第一介质基板，11-第一层叠贴片，12-第二层叠贴片，13-第三层叠贴片，14-第四层叠贴片，15-全波长环形微带线，2-第二介质基板，21-第一激励贴片，22-第二激励贴片，23-第三激励贴片，24-第四激励贴片，251-第一端口，252-第二端口，253-第三端口，254-第四端口，255-第五端口，256-第六端口，257-第七端口，258-第八端口，261-第一高频馈电线，262-第二高频馈电线，263-第三高频馈电线，264-第四高频馈电线，265-第五高频馈电线，266-第六高频馈电线，267-第七高频馈电线，268-第八 高频馈电线，3-第三介质基板，31-开路耦合微带线，32-第一馈电焊盘，321-第九端口，322-第十端口，33-低频全波长辐射缝隙，34-第一地板，35-四分之一波长开端微带短截线，36-第一接地焊盘，37-第二接地焊盘，4-第四介质基板，5-第五介质基板，6-第二地板，61-第二方形环形槽，7-周期性贴片单元，71-第一方形环形槽。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
为了便于描述，下文和附图都将以基于滤波缝隙天线和双功能超表面的共口径双频双极化天线阵列为例来说明本发明实施例提供的共口径双频双极化天线阵列的结构，应当理解的是，本发明实施例并不限于基于滤波缝隙天线和双功能超表面的共口径双频双极化天线阵列，而应包含所有具备本发明特征的所有共口径双频双极化天线阵列。
如图1和图2所示，本实施例的共口径双频双极化天线阵列包括五层介质基板，五层介质基板分别为第一介质基板1、第二介质基板2、第三介质基板3、第四介质基板4和第五介质基板5，第一介质基板1、第二介质基板2、第三介质基板3、第四介质基板4和第五介质基板5自上而下依次设置，第一介质基板1、第二介质基板2和第三介质基板3构成介质基板组，介质基板组上设置有一个低频天线单元和四个高频天线单元，低频天线单元工作在0.69-0.96GHz，每个高频天线单元工作在3.4-3.7GHz，低频天线单元上加载有滤波结构，可以降低低频天线单元在高频段的带外辐射，减小异频耦合，低频天线单元和高频天线单元均采用同轴线(又称同轴电缆)馈电，低频天线单元的同轴线为第一同轴线，第一同轴线和第二同轴线均穿过第三介质基板3、第四介质基板4和第五介质基板5，高频天线单元的同轴线为第二同轴线，第四介质基板4和第五介质基板5构成一个双功能超表面。
本实施例中，第一介质基板1、第二介质基板2、第三介质基板3采用Rogers 4003介质基板，厚度可以为1.524mm或0.813mm，第四介质基板4和第五介质基板5采用Rogers 4350介质基板，厚度可以为1.524mm，第一层介质基板1和第二层介质基板2之间的距离为5mm，第二层介质基板2和第三层介质基板3之间存在厚度为1mm的空气间隙，第四层介质基板4和第五层介质基板5之间存在厚度为12mm的空气间隙，相邻高频天线单元之间的距离为20mm(约0.24λ c)。
下面结合图1～图8分别详细描述低频天线单元、高频天线单元和双功能超表面。
如图1～图4所示，第三介质基板3上表面(顶面)的第一地板34上蚀刻出低频全 波长辐射缝隙33，第一地板34上设置有第一馈电焊盘32，低频全波长辐射缝隙33和第一地板34向下弯折，由于第一地板34从二维平面变换为三维弯折形状，减小了天线阵列的整体尺寸，以实现小型化；第三介质基板3的下表面(底面)印刷了两条低频阶跃阻抗馈电线38，第三介质基板3的下表面设置有第一接地焊盘36和第二接地焊盘37，第一接地焊盘36为低频接地焊盘，第二接地焊盘37为高频接地焊盘，两条低频阶跃阻抗馈电线38存在交叉，每条低频阶跃阻抗馈电线38为弯折形馈电线，可以减少尺寸，低频全波长辐射缝隙33和两条低频阶跃阻抗馈电线38构成了低频天线单元的主要部分，通过两条低频阶跃阻抗馈电线38对低频全波长辐射缝隙33进行馈电，以实现低频段±45°双极化辐射，采用低频全波长辐射缝隙33作为辐射体，能够实现宽带效果。
低频全波长辐射缝隙33内设置有四对开路耦合微带线31，四对开路耦合微带线31分别与第一地板34相连，用于抑制低频全波长辐射缝隙33在3.5GHz左右的辐射；每条低频阶跃阻抗馈电线38设置有一条四分之一波长开端微带短截线35，即共有两条四分之一波长开端微带短截线35，构成一对四分之一波长开端微带短截线35，四分之一波长开端微带短截线35从低频阶跃阻抗馈电线38延伸以抑制高频谐振，开路耦合微带线31和四分之一波长开端微带短截线35构成滤波结构，以实现滤波功能，有效抑制其在高频段3.2-3.8GHz的带外辐射，从而减小异频耦合。
进一步地，低频全波长辐射缝隙33为十字形辐射缝隙，十字形辐射缝隙的四侧和第一地板34的四侧向下弯折，使十字形辐射缝隙分为水平部分(左右前后共四个水平部分)和垂直部分(左右前后共四个垂直部分)，十字形辐射缝隙的垂直部分形成箭头形状，以进一步减小尺寸，其中两对开路耦合微带线31对称设置在十字形辐射缝隙的前后水平部分，另外两对耦合微带线31对称设置在十字形辐射缝隙的前后水平部分。
进一步地，每条低频阶跃阻抗馈电线38的一端通过金属化过孔与第一地板34相连，另一端通过金属化过孔与第一地板34上的第一馈电焊盘32相连，第一馈电焊盘32与第一同轴线内导体引脚相连，第一同轴线外导体与第三介质基板3下表面上的第一接地焊盘36、第五介质基板5下表面上的第二地板6以焊接的方式相连，第一接地焊盘36通过金属化过孔与第一地板34相连。
如图1～图7所示，第一介质基板1的上表面(顶面)印刷了四个层叠贴片，四个层叠贴片分别为第一层叠贴片11、第二层叠贴片12、第三层叠贴片13和第四层叠贴片14，第二介质基板2的上表面(顶面)印刷了四个激励贴片(又称驱动贴片)，四个激励贴片分别为第一激励贴片21、第二激励贴片22、第三激励贴片23和第四激励贴片24，第二介质基板2的下表面(底面)印刷有四对高频馈电线，每对高频馈电线包括两条高频馈电线，即共有八条高频馈电线，八条高频馈电线分别为第一高频馈电线261、第二高频馈电线262、第三高频馈电线263、第四高频馈电线264、第五高频馈电 线265、第六高频馈电线266、第七高频馈电线267和第八高频馈电线268，第一层叠贴片11、第一激励贴片21、第一高频馈电线261和第二高频馈电线262的位置对应，通过第一高频馈电线261和第二高频馈电线262对第一激励贴片21进行馈电，以实现高频段±45°双极化辐射；第二层叠贴片12、第二激励贴片22、第三高频馈电线263和第四高频馈电线264的位置对应，通过第三高频馈电线263和第四高频馈电线264对第二激励贴片22进行馈电，以实现高频段±45°双极化辐射；第三层叠贴片13、第三激励贴片23、第五高频馈电线265和第六高频馈电线266的位置对应，通过第五高频馈电线265和第六高频馈电线266对第三激励贴片23进行馈电，以实现高频段±45°双极化辐射；第四层叠贴片14、第四激励贴片24、第七高频馈电线267和第八高频馈电线268的位置对应，通过第七高频馈电线267和第八高频馈电线268对第四激励贴片24进行馈电，以实现高频段±45°双极化辐射；四个层叠贴片、四个激励贴片和四对高频馈电线构成了四个高频天线单元，四个高频天线单元和低频天线单元共享第一地板34，且四个高频天线单元关于低频天线单元的低频全波长辐射缝隙33对称。
进一步地，八条高频馈电线均为H形微带线，第一高频馈电线261和第二高频馈电线262相互交叉，第三高频馈电线263和第四高频馈电线264相互交叉，第五高频馈电线265和第六高频馈电线266相互交叉，第七高频馈电线267和第八高频馈电线268相互交叉。
进一步地，以图5的x轴正方向作为后边，x轴负方向作为前边，y轴正方向作为右边，y轴负方向作为左边，第一层叠贴片11的左边和后边、第二层叠贴片12的右边和后边、第三层叠贴片13的左边和前边、第四层叠贴片14的右边和前边、第一层叠贴片11与第二层叠贴片12之间、第一层叠贴片11与第三层叠贴片13之间、第二层叠贴片12与第四层叠贴片14之间、第三层叠贴片13与第四层叠贴片14之间均放置有全波长环形微带线15，即共有十二条全波长环形微带线15，每个层叠贴片都被四个对称的全波长环形微带线15包围，以减小高频天线单元的同频耦合；每个激励贴片上蚀刻四个相互中心对称的方形缝隙，使每个高频天线单元紧凑。
进一步地，每条高频馈电线通过金属过孔与第二介质基板2上表面上的第二馈电焊盘相连，第二馈电焊盘与第二同轴线内导体引脚相连，第二同轴线外导体与第三介质基板3下表面上的第二接地焊盘37、第五介质基板4下表面上的第二地板6以焊接的方式相连，第二接地焊盘37通过金属化过孔与第三介质基板3上表面上的第一地板34相连。
此外，第一端口251、第三端口253、第五端口255和第七端口257在高频段激励-45°极化辐射，第二端口252、第四端口254、第六端口256和第八端口258在高频段激励45°极化辐射，第九端口321和第十端口322在低频段分别激励-45°和45°极化辐射。
如图1～图8所示，为了减少高频天线单元的散射，本实施例设计了通过第四层介质基板4和第五层介质基板5构成的双功能超表面，双功能超表面的两个功能：1)作为人工磁导体(Artificial Magnetic Conductor，简称AMC)反射器，在低频天线单元实现低剖面的情况下反射低频电磁波，即在低剖面内增强低频天线单元的辐射；2)作为带通频率选择表面(Frequency Selective Surface，简称FSS)，在高频段实现电磁波的带通传输，抑制低频天线单元在高频段的电磁散射，从而减小低频天线单元对高频天线单元辐射方向图的负面影响。
进一步地，第四介质基板4的上表面(顶面)设置有5×5个周期性贴片单元7，每个周期性贴片单元上蚀刻四个相互中心对称的第一方形环形槽71，四个第一方形环形槽71周期性排布在第四介质基板4的上表面，第五介质基板5下表面(底面)上的第二地板6为超表面地板，第二地板6在第一方形环形槽的相应位置上蚀刻第二方形环形槽61，第二方形环形槽61与第一方形环形槽71的位置、尺寸完全相同，也呈周期性排布。
如图9～图10所示，分别为本实施例提供的共口径双频双极化天线阵列与普通无滤波结构的天线在高频段的峰值增益曲线对比图以及异频端口隔离度曲线对比图，其中的无滤波结构天线是通过从实施例提供的低频天线单元中去除两条四分之一波长开端微带短截线35和四对开路耦合微带线31而完成的；明显可以看出，本实施例所提出的天线阵列在3.4-3.55GHz频段内实现的峰值增益大幅降低；而异频端口耦合度的幅度小于-35dB，与无滤波结构相比要低得多；因此，通过带外抑制性能大大提高了异频端口隔离度。
如图11～图12所示，分别为本实施例提供的双功能超表面的低频和高频的反射和传输系数曲线图，以及低频段的反射相位曲线图，从图11中可以看出，0.69-0.96GHz频段内反射系数的幅度高于-0.5dB，图12中的反射相位范围从43.7°到-69.6°，这意味着超表面可以作为人工磁导体反射器，并用于在低剖面内使天线实现单向辐射模式；图12中的3.4-3.7GHz频段的传输系数幅度约为-0.3dB，这表明超表面可以起到频率选择表面的作用，使高频的辐射电磁波通过。
如图13～图15所示，分别为本实施例提供的共口径双频双极化天线阵列与使用平面金属反射板、传统AMC表面的天线在3.7GHz下的二维增益对比图、峰值增益对比图和异频端口隔离度曲线对比图，从图13可以看出反射板和传统AMC天线的高频天线单元在3.7GHz时辐射方向图存在严重畸变；在phi＝45°的二维平面中，反射板和传统AMC天线分别在theta＝25°和20°方向上具有辐射零点；从图14和图15可以看出，与反射板天线相比，本实施例提出的天线阵列在3.65GHz的峰值增益减小了约5.5dB，并且异频耦合度减小了不到6.59dB；与传统AMC天线相比，本实施例提出的天线阵列在3.65GHz处实现的峰值增益降低了约10.2dB，异频端口耦合度降低了约11dB。
如图16所示，为实施例提供的共口径双频双极化天线阵列的所有端口反射系数的测试结果图，可以看出低频天线单元工作在0.653-0.971GHz频段内时，反射系数低于-10dB；高频天线单元工作在3.32-3.62GHz频段内时，反射系数低于-10dB。
如图17所示，为本实施例提供的共口径双频双极化天线阵列的每个单元极化耦合度的测试结果图，可以看出低频天线单元在0.69-0.96GHz频段中的极化隔离度高于25dB；高频天线单元在3.4-3.7GHz频段的极化隔离度高于30dB。
如图18所示，为本实施例提供的天线阵列的高频天线单元带内耦合度的测试结果图，可以看出在3.4-3.7GHz频段中，高频天线单元之间的带内隔离度高于20dB。
如图19所示，为本实施例提供的天线阵列的异频耦合度的测试结果图，可以看出低频天线单元和高频天线单元之间的异频端口隔离度在0.69-0.96GHz内高于34dB和在3.4-3.7GHz内高于32dB。
如图20～图21所示，分别为本实施例提供的低频天线单元通过第九激励端口在0.69GHz处的二维辐射方向图以及在0.96GHz处的二维辐射方向图，第九激励端口321和第十激励端口322的低频辐射方向图相似，因此，仅选择第九激励端口321低频段的辐射方向图，可以看出低频天线单元有稳定的边射辐射模式，在工作频段内不会产生方向图畸变，而第九激励端口321对应的3dB波束范围为73°至79°，交叉极化水平小于-15dB。
如图22～图23所示，分别为本实施例提供的高频天线单元通过第一激励端口在3.4GHz处的二维辐射方向图以及在3.7GHz处的二维辐射方向图，第一端口251至第八端口258的高频辐射方向图也相似，因此，仅选择第一端口251显示高频段的辐射方向图，可以看出高频天线单元有稳定的边射辐射模式，在工作频段内不会产生方向图畸变，第一端口251的3dB波束范围为76°至84°，高频的交叉极化水平小于-15dB。
如图24所示，为本发明实施例提供的共口径双频双极化天线阵列通过第一激励端口、第二激励端口、第九激励端口和第十激励端口得到的峰值增益的测试结果图，选择第一激励端口251和第二激励端口252的增益表示高频天线单元的-45°和45°极化辐射，测得的低频天线单元峰值增益在0.69-0.96GHz范围内为7.0至7.7dBi，高频天线单元在3.4-3.7GH范围内为6.3至7.9dBi，各端口对应的峰值增益在各自的工作频段内波动较小。
本实施例还提供了一种通信设备，该通信设备为无线通信系统的发射和接收设备，包括上述的共口径双频双极化天线阵列。
综上所述，本发明设置了一个工作在0.69-0.96GHz的低频天线单元以及四个工作在3.4-3.7GHz的高频天线单元，并且通过在低频天线单元上加载滤波结构，降低低频天线单元在高频段的带外辐射，减少异频耦合；此外，使用双功能超表面抑制异频互 耦合和散射的方法，双功能超表面可以在低剖面内作为人工磁导体反射器增强低频段缝隙天线的辐射，它在高频段作为频率选择表面具有带通传输性能，并抑制低频天线单元在高频段的电磁散射，从而减小低频天线单元对高频天线单元辐射方向图的负面影响，使得高频天线单元的辐射方向图失真减少。
以上所述，仅为本发明专利较佳的实施例，但本发明专利的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明专利所公开的范围内，根据本发明专利的技术方案及其发明构思加以等同替换或改变，都属于本发明专利的保护范围。

Claims (10)

  1. 一种共口径双频双极化天线阵列，其特征在于，包括自上而下依次设置的第一介质基板、第二介质基板、第三介质基板、第四介质基板和第五介质基板，所述第一介质基板、第二介质基板和第三介质基板构成介质基板组，所述介质基板组上设置有一个低频天线单元和四个高频天线单元，所述低频天线单元上加载有滤波结构，低频天线单元和高频天线单元均采用同轴线馈电，所述第四介质基板和第五介质基板构成一个双功能超表面，所述双功能超表面作为人工磁导体反射器时在低剖面内增强低频天线单元的辐射，作为频率选择表面时抑制低频天线单元在高频段的电磁散射。
  2. 根据权利要求1所述的共口径双频双极化天线阵列，其特征在于，所述低频天线单元包括低频全波长辐射缝隙和两条低频阶跃阻抗馈电线，所述低频全波长辐射缝隙设置在第三介质基板上表面的第一地板上，低频全波长辐射缝隙和第一地板向下弯折，且低频全波长辐射缝隙内设置有四对开路耦合微带线，四对开路耦合微带线分别与第一地板相连，两条低频阶跃阻抗馈电线交叉设置在第三介质基板的下表面，通过两条低频阶跃阻抗馈电线对低频全波长辐射缝隙进行馈电，以实现低频段±45°双极化辐射；每条低频阶跃阻抗馈电线设置有一条四分之一波长开端微带短截线，所述开路耦合微带线和四分之一波长开端微带短截线构成滤波结构。
  3. 根据权利要求2所述的共口径双频双极化天线阵列，其特征在于，每条低频阶跃阻抗馈电线的一端通过金属化过孔与第一地板相连，另一端通过金属化过孔与第一地板上的第一馈电焊盘相连，所述第一馈电焊盘与低频天线单元的第一同轴线内导体引脚相连，所述第一同轴线外导体与第三介质基板下表面上的第一接地焊盘、第五介质基板下表面上的第二地板相连，所述第一接地焊盘通过金属化过孔与第一地板相连。
  4. 根据权利要求2-3任一项所述的共口径双频双极化天线阵列，其特征在于，所述低频全波长辐射缝隙为十字形辐射缝隙，所述十字形辐射缝隙的四侧和第一地板的四侧向下弯折，十字形辐射缝隙的垂直部分形成箭头形状，其中两对开路耦合微带线对称设置在十字形辐射缝隙的前后水平部分，另外两对耦合微带线对称设置在十字形辐射缝隙的前后水平部分，每条低频阶跃阻抗馈电线为弯折形馈电线。
  5. 根据权利要求1-3任一项所述的共口径双频双极化天线阵列，其特征在于，每个高频天线单元包括一个层叠贴片、一个激励贴片和一对高频馈电线，四个高频天线单元的四个层叠贴片、四个激励贴片和四对高频馈电线为位置一一对应的关系，每个层叠贴片设置在第一介质基板的上表面，每个激励贴片设置在第二介质基板的上表面，每对高频馈电线设置在第二介质基板的下表面，通过每对高频馈电线对相应的激励贴片进行馈电，以实现高频段±45°双极化辐射。
  6. 根据权利要求5所述的共口径双频双极化天线阵列，其特征在于，每个层叠贴 片的四周放置有四个对称的全波长环形微带线。
  7. 根据权利要求5所述的共口径双频双极化天线阵列，其特征在于，每个激励贴片上设置有四个相互中心对称的方形缝隙。
  8. 根据权利要求1-3任一项所述的共口径双频双极化天线阵列，其特征在于，每对高频馈电线包括两条相互交叉的H形微带线，通过两条H形微带线对相应的激励贴片进行馈电，以实现高频段±45°双极化辐射；每条H形微带线通过金属过孔与第二介质基板上表面上的第二馈电焊盘相连，所述第二馈电焊盘与高频天线单元的第二同轴线内导体引脚相连，所述第二同轴线外导体与第三介质基板下表面上的第二接地焊盘、第五介质基板下表面上的第二地板相连，所述第二接地焊盘通过金属化过孔与第三介质基板上表面上的第一地板相连。
  9. 根据权利要求1-3任一项所述的共口径双频双极化天线阵列，其特征在于，所述第四介质基板的上表面设置有N×N个周期性贴片单元，每个周期性贴片单元上设置有四个相互中心对称的第一方形环形槽，所述第五介质基板下表面上的第二地板在第一方形环形槽的相应位置上设置有第二方形环形槽，其中N≥2，且为自然数。
  10. 一种通信设备，其特征在于，包括权利要求1-9任一项所述的共口径双频双极化天线阵列。
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