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WO2023047957A1 - High frequency module and communication device - Google Patents

High frequency module and communication device Download PDF

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Publication number
WO2023047957A1
WO2023047957A1 PCT/JP2022/033549 JP2022033549W WO2023047957A1 WO 2023047957 A1 WO2023047957 A1 WO 2023047957A1 JP 2022033549 W JP2022033549 W JP 2022033549W WO 2023047957 A1 WO2023047957 A1 WO 2023047957A1
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WO
WIPO (PCT)
Prior art keywords
electronic component
main surface
mounting board
frequency module
mounting
Prior art date
Application number
PCT/JP2022/033549
Other languages
French (fr)
Japanese (ja)
Inventor
穣 岩永
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2023047957A1 publication Critical patent/WO2023047957A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving

Definitions

  • An object of the present invention is to provide a high-frequency module and a communication device that can be miniaturized.
  • the high frequency module 1 includes, for example, a first mounting board 2, a second mounting board 3, a first electronic component 4, a second electronic component, as shown in FIGS. A component 5 , a third electronic component 6 and a fourth electronic component 7 are provided.
  • the first mounting board 2 has a first main surface 21 and a second main surface 22 facing each other.
  • the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2 .
  • the second mounting board 3 has a third main surface 31 and a fourth main surface 32 facing each other.
  • the second main surface 22 of the first mounting board 2 and the third main surface 31 of the second mounting board 3 face each other.
  • the length of the first electronic component 4 is the length of the second electronic component 5, It is longer than both the length of the third electronic component 6 and the length of the fourth electronic component 7 . Therefore, in the high-frequency module 1 according to Embodiment 1, in plan view from the first direction D1, the area of the first electronic component 4 is the area of the second electronic component 5, the area of the third electronic component 6, and the area of the third electronic component 6. 4 larger than the area of the electronic component 7 . In other words, the first electronic component 4 has the largest main surface area among the components of the high-frequency module 1 in a plan view from the first direction D1.
  • the fourth electronic component 7 overlaps with any of the second mounting substrate 3, the second electronic component 5, and the third electronic component 6 in a plan view from the first direction D1. not. Further, in the first direction D1, the distance from the second main surface 22 of the first mounting board 2 to the main surface of the fourth electronic component 7 opposite to the first mounting board 2 side is is greater than the distance from the second main surface 22 of the second mounting board 3 to the fourth main surface 32 of the second mounting board 3 .
  • FDD Frequency Division Duplex
  • TDD Time Division Duplex
  • the high-frequency module 1 includes a first switch 11, a plurality of (three in the illustrated example) matching circuits 121 to 123, a plurality of (three in the illustrated example) reception filters 131 to 133, and a second A switch 15 and a low noise amplifier 161 are provided.
  • Two inductors 162 are connected to the input side of the low noise amplifier 161 (only one is shown in FIG. 3).
  • each of the two inductors 162 constitutes the above-described fourth electronic component 7 (see FIG. 2).
  • each of the matching circuits 121 to 123 constitutes the second electronic component 5 described above
  • each of the plurality of reception filters 131 to 133 constitutes the third electronic component 6 described above. (See Figures 1 and 2).
  • the first electronic component 4 is an IC chip including the first switch 11 , the low noise amplifier 161 and the second switch 15 .
  • Each of the reception filters 131 to 133 has, for example, a configuration including a plurality of elastic wave filters.
  • the low noise amplifier 161 shown in FIG. 3 is an amplifier that amplifies a received signal with low noise.
  • the low-noise amplifier 161 is provided between the plurality of reception filters 131 to 133 and the signal output terminal 102 in the reception path R1.
  • the low noise amplifier 161 has an input terminal (not shown) and an output terminal (not shown).
  • An input terminal of the low-noise amplifier 161 is connected to an inductor 162, which is a matching circuit, and is connected to the reception filters 131 to 133 via the inductor 162 and a second switch 15, which will be described later.
  • An output terminal of the low noise amplifier 161 is connected to an external circuit (for example, the signal processing circuit 93) via the signal output terminal 102.
  • the matching circuits 121 to 123 are configured to include inductors, for example.
  • the inductors of the matching circuits 121 to 123 are provided, for example, on the output sides of power amplifiers 191 and 192, which will be described later, in the transmission path T1, and on the input sides of the reception filters 131 to 133 in the reception path R1.
  • the matching circuits 121 to 123 are not limited to configurations including two inductors, and may include, for example, one or three or more inductors, or may include one or more capacitors. .
  • the first switch 11 shown in FIG. 3 switches the reception filter connected to the antenna terminal 101 among the plurality of reception filters 131-133. Also, the first switch 11 switches the transmission filter connected to the antenna terminal 101 among the plurality of transmission filters 141 to 143 . That is, the first switch 11 is a switch for switching the route to be connected to the antenna 91 .
  • the first switch 11 has a common terminal 111 and a plurality of (three in the illustrated example) selection terminals 112 to 114 . Common terminal 111 is connected to antenna terminal 101 .
  • the selection terminal 112 among the plurality of selection terminals 112 to 114 is connected to the reception filter 131 and the transmission filter 141 via the matching circuit 121 .
  • the second switch 15 shown in FIG. 3 switches the reception filter connected to the low noise amplifier 161 among the plurality of reception filters 131 to 133 . That is, the third switch is a switch for switching the path to be connected to the low noise amplifier 161 .
  • the second switch 15 has a common terminal 154 and a plurality of (three in the illustrated example) selection terminals 151 to 153 . Common terminal 154 is connected to low noise amplifier 161 via inductor 162 .
  • the selection terminal 151 among the plurality of selection terminals 151 to 153 is connected to the reception filter 131 .
  • a selection terminal 152 among the plurality of selection terminals 151 to 153 is connected to the reception filter 132 .
  • a selection terminal 153 among the plurality of selection terminals 151 to 153 is connected to the reception filter 133 .
  • the plurality of external connection terminals 10 are terminals for electrical connection with an external circuit (for example, the signal processing circuit 93).
  • the multiple external connection terminals 10 include an antenna terminal 101 (see FIG. 3), a signal output terminal 102 (see FIG. 3), and multiple ground terminals (not shown).
  • the high-frequency module 1 includes a first mounting board 2, a second mounting board 3, and a plurality of (nine in the illustrated example) electronic components.
  • the nine electronic components are a first electronic component 4, matching circuits 121 to 123 (second electronic component 5), reception filters 131 to 133 (third electronic component 6), and an inductor 162 (fourth electronic component 7 ) and
  • the first electronic component 4 is an IC chip (IC component) including the first switch 11 , the second switch 15 and the low noise amplifier 161 .
  • the high-frequency module 1 includes a plurality of external connection terminals 10, a plurality of internal connection terminals 20, a first resin layer 81, a second resin layer 82, a metal electrode layer 9, Prepare.
  • the first mounting board 2 has a first main surface 21 and a second main surface 22, as shown in FIG.
  • the first main surface 21 and the second main surface 22 face each other in the first direction D1.
  • the second main surface 22 faces the main surface of the external substrate on the side of the first mounting substrate 2 when the high-frequency module 1 is provided on the external substrate (not shown).
  • the first mounting board 2 is a double-sided mounting board in which the first electronic component 4 is mounted on the first principal surface 21 and the fourth electronic component 7 is mounted on the second principal surface 22 .
  • the first mounting board 2 has a predetermined thickness W1 in the first direction D1.
  • the first mounting board 2 is a multi-layer board in which a plurality of dielectric layers are laminated.
  • the first mounting board 2 has a plurality of conductive layers and a plurality of via conductors (including through electrodes).
  • the plurality of conductive layers includes a ground layer.
  • the plurality of via conductors are provided between the elements (the first electronic component 4 and the fourth electronic component 7 described above) mounted on each of the first main surface 21 and the second main surface 22 and the conductive layer of the first mounting board 2 . used for electrical connection.
  • the plurality of via conductors provide electrical connection between the elements mounted on the first main surface 21 and the elements mounted on the second main surface 22, and external connection with the conductive layer of the first mounting substrate 2. It is used for electrical connection with the terminal 10 and the internal connection terminal 20 .
  • a first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2 .
  • a fourth electronic component 7 , a plurality of external connection terminals 10 , and a plurality of internal connection terminals 20 are arranged on the second main surface 22 of the first mounting board 2 .
  • the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2, as shown in FIG. As described above, the first electronic component 4 is an electronic component having the largest area among the electronic components included in the high-frequency module 1 when viewed in plan from the first direction D1.
  • the first electronic component 4 is an IC chip including a first switch 11 (see FIG. 3), a second switch 15, and a low noise amplifier 161.
  • FIG. The first electronic component 4 is a Si-based IC chip. The outer edge of the first electronic component 4 is rectangular in plan view from the first direction D1.
  • the first electronic component 4 is flip-chip mounted on the first main surface 21 of the first mounting substrate 2, for example.
  • the first electronic component 4 is connected to the first mounting board 2 by a plurality of conductive bumps.
  • the material of the conductive bumps is eg solder, gold or copper.
  • the conductive bumps are not a component of the first electronic component 4 but may be a component of the first electronic component 4 .
  • the thickness of the high-frequency module 1 in the first direction D1 can be reduced even when compared with the case where the fourth electronic component 7 is arranged on the second mounting board 3 .
  • the fourth electronic component 7 is, for example, an inductor 162 connected to the input terminal of the low noise amplifier 161 .
  • the second mounting board 3 has a third main surface 31 and a fourth main surface 32, as shown in FIGS.
  • the third main surface 31 and the fourth main surface 32 face each other in the first direction D1.
  • the third main surface 31 faces the second main surface 22 of the first mounting board 2 . That is, the second mounting board 3 is positioned on the second main surface 22 .
  • the second mounting board 3 has the second electronic component 5 and the internal connection terminals 20 mounted on the third main surface 31 and the third electronic component 6 mounted on the fourth main surface 32 . That is, electronic components are mounted on both sides of the second mounting board 3 .
  • the second mounting board 3 has a predetermined thickness W2 in the first direction D1. As will be described later, the thickness W2 of the second mounting board 3 is thinner than the thickness W1 of the first mounting board 2 .
  • the third electronic component 6 is arranged on the fourth main surface 32 of the second mounting board 3, as shown in FIGS.
  • the third electronic component 6 is, for example, reception filters 131-133.
  • Each of the reception filters 131 to 133 is, for example, an elastic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators.
  • the acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves.
  • the third electronic component 6 has a fifth main surface 61 on the side opposite to the second mounting board 3 side.
  • the fifth main surface 61 of the third electronic component 6 is on the same plane as the end surface of the high-frequency module 1 on the side of the external substrate in the first direction D1.
  • the plurality of external connection terminals 10 are arranged on the second main surface 22 of the first mounting board 2, as shown in FIGS. "The external connection terminals 10 are arranged on the second main surface 22 of the first mounting board 2" means that the external connection terminals 10 are mechanically connected to the second main surface 22 of the first mounting board 2. and that the external connection terminal 10 is electrically connected to (a suitable conductor portion of) the first mounting board 2 .
  • the material of the plurality of external connection terminals 10 is, for example, metal (eg, copper, copper alloy, etc.).
  • Each of the plurality of external connection terminals 10 is a columnar electrode.
  • the columnar electrodes are, for example, joined to the conductor portion of the first mounting substrate 2 by soldering, for example, but not limited to this, for example, joining using a conductive adhesive (for example, conductive paste). It may be connected directly.
  • a conductive adhesive for example, conductive paste. It may be connected directly.
  • Each of the plurality of external connection terminals 10 has a circular shape in plan view from the first direction D1.
  • the external connection terminals 10 do not overlap the second mounting substrate 3 and the second electronic component 5 in plan view from the first direction D1.
  • the external connection terminals 10 may be located closer to the outer peripheral surface 23 of the first mounting board 2 than the second electronic component 5 when viewed in plan from the first direction D ⁇ b>1 . Since at least one external connection terminal 10 exists at a position closer to the outer peripheral surface 23 of the first mounting board 2 than the second electronic component 5, the external connection terminal 10 functions as an electromagnetic shield for the second electronic component 5.
  • the length of the external connection terminal 10 in the first direction D1 is preferably ⁇ /4 or less with respect to the wavelength ⁇ of the electromagnetic wave to be shielded.
  • the multiple external connection terminals 10 include an antenna terminal 101, a signal output terminal 102, and multiple external ground terminals.
  • the internal connection terminals 20 do not overlap the third electronic component 6 in plan view from the first direction D1. Further, the internal connection terminals 20 may be located closer to the outer peripheral surface of the second mounting board 3 than the third electronic component 6 when viewed from the first direction D ⁇ b>1 . Since at least one internal connection terminal 20 exists at a position closer to the outer peripheral surface of the second mounting board 3 than the third electronic component 6 , the internal connection terminal 20 functions as an electromagnetic shield for the third electronic component 6 . In this case, the length of the internal connection terminal 20 in the first direction D1 is preferably ⁇ /4 or less with respect to the wavelength ⁇ of the electromagnetic wave to be shielded. Further, the internal connection terminal 20 may exist between the third electronic component 6 and the second electronic component 5 in plan view from the first direction D1.
  • the second resin layer 82 is arranged on the second main surface 22 of the first mounting board 2 as shown in FIG.
  • the second resin layer 82 covers the outer peripheral surface of the fourth electronic component 7 mounted on the second main surface 22 of the first mounting board 2 .
  • the second resin layer 82 is formed on the main surface of the second electronic component 5 mounted on the third main surface 31 of the second mounting substrate 3 on the side of the first mounting substrate 2 and the outer peripheral surface of the second electronic component 5 . and covers. Furthermore, the second resin layer 82 covers the outer peripheral surface of the third electronic component 6 mounted on the fourth main surface 32 of the second mounting board 3 .
  • the metal electrode layer 9 covers the first resin layer 81 and the second resin layer 82 .
  • the metal electrode layer 9 is a shield layer provided for the purpose of electromagnetic shielding inside and outside the high frequency module 1 .
  • the metal electrode layer 9 has a multi-layered structure in which a plurality of metal layers are laminated, it is not limited to a multi-layered structure and may be one metal layer.
  • One metal layer contains one or more kinds of metals.
  • the metal electrode layer 9 includes a main surface 811 of the first resin layer 81 opposite to the first mounting substrate 2 side, an outer peripheral surface 812 of the first resin layer 81, an outer peripheral surface 23 of the first mounting substrate 2, It covers part of the outer peripheral surface 822 of the second resin layer 82 . Moreover, the metal electrode layer 9 covers the main surface 41 of the first electronic component 4 on the side opposite to the first mounting substrate 2 side.
  • the fifth main surface 61 of the third electronic component 6 is not in contact with the metal electrode layer 9 . In other words, the fifth main surface 61 of the third electronic component 6 is separated from the metal electrode layer 9 in the first direction D1.
  • the metal electrode layer 9 is in contact with at least part of the outer peripheral surface of the ground layer of the first mounting substrate 2, as shown in FIG. Thereby, the potential of the metal electrode layer 9 can be made the same as the potential of the ground layer.
  • the first mounting board 2 shown in FIGS. 1 and 2 is, for example, a multilayer board including a plurality of dielectric layers and a plurality of conductive layers. is.
  • the plurality of dielectric layers and the plurality of conductive layers are laminated in the first direction D1.
  • a plurality of conductive layers are formed in a predetermined pattern defined for each layer.
  • Each of the multiple conductive layers includes one or multiple conductor portions within one plane orthogonal to the first direction D1.
  • the material of each conductive layer is copper, for example.
  • the plurality of conductive layers includes a ground layer.
  • the first mounting board 2 is, for example, an LTCC (Low Temperature Co-fired Ceramics) board.
  • the first mounting board 2 is not limited to the LTCC board, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) board, or a resin multilayer board.
  • the first surface of the two surfaces facing each other in the thickness direction of the multilayer structure is the first principal surface 21 of the first mounting substrate 2
  • the second surface is the first main surface 21 of the first mounting substrate 2
  • the wiring structure may be, for example, an interposer.
  • the interposer may be an interposer using a silicon substrate, or may be a multi-layered substrate.
  • the first main surface 21 and the second main surface 22 of the first mounting board 2 are separated in the first direction D1 and intersect the first direction D1.
  • the first main surface 21 of the first mounting board 2 is, for example, orthogonal to the first direction D1, but may include, for example, side surfaces of conductors as surfaces that are not orthogonal to the first direction D1.
  • the second main surface 22 of the first mounting substrate 2 is, for example, orthogonal to the first direction D1. good.
  • the first main surface 21 and the second main surface 22 of the first mounting substrate 2 may have fine unevenness, concave portions, or convex portions.
  • the second mounting substrate 3 shown in FIGS. 1 and 2 is, for example, a substrate including one dielectric layer and two conductive layers.
  • One dielectric layer and two conductive layers are laminated in the thickness direction of the second mounting board 3 .
  • the number of laminated dielectric layers and conductive layers on the second mounting board 3 is smaller than the number of laminated dielectric layers and conductive layers on the first mounting board 2 . Therefore, the thickness W2 of the second mounting board 3 is thinner than the thickness W1 of the first mounting board 2 . In other words, the thickness W1 of the first mounting board 2 is thicker than the thickness W2 of the second mounting board 3 .
  • the two conductive layers are formed in a predetermined pattern defined for each layer.
  • Each of the two conductive layers includes one or more conductors in one plane perpendicular to the thickness direction of the second mounting board 3 .
  • the material of each conductive layer is copper, for example.
  • the second mounting board 3 is, for example, an LTCC (Low Temperature Co-fired Ceramics) board.
  • the second mounting board 3 is not limited to the LTCC board, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) board, or a resin multilayer board.
  • the second mounting board 3 is not limited to the LTCC board, and may be, for example, a wiring structure.
  • the wiring structure is, for example, a multilayer structure. In the wiring structure, of the two surfaces facing each other in the thickness direction of the multilayer structure, the first surface facing the second main surface 22 of the first mounting substrate 2 is the third main surface of the second mounting substrate 3. 31 , and the second surface is the fourth main surface 32 of the second mounting board 3 .
  • the wiring structure may be, for example, an interposer.
  • the interposer may be an interposer using a silicon substrate, or may be a multi-layered substrate.
  • the filter configured as the third electronic component 6 is a bare-chip elastic wave filter.
  • the third electronic component 6 has a substrate, a circuit section, a plurality of pad electrodes, a piezoelectric layer, and a low sound velocity film.
  • the substrate has a sixth main surface and a seventh main surface facing each other in the thickness direction of the substrate.
  • the seventh main surface of the substrate constitutes the fifth main surface 61 of the third electronic component 6 .
  • the circuit section includes a plurality of IDT (Interdigital Transducer) electrodes.
  • a plurality of pad electrodes are formed on the sixth main surface of the substrate and connected to the circuit section.
  • a plurality of pad electrodes are connected to the second mounting board 3 via a plurality of bumps.
  • the low acoustic velocity film is provided on the sixth main surface of the substrate.
  • the piezoelectric layer is provided on the low sound velocity film.
  • a plurality of IDT electrodes are provided on the piezoelectric layer. Further, the plurality of IDT electrodes are arranged in the space formed between the substrate and the second mounting substrate 3 by the plurality of pad electrodes, the plurality of bumps, the substrate, the second mounting substrate 3 and the second resin layer 82. are placed.
  • the third electronic component 6 has a rectangular shape in plan view from the thickness direction of the substrate, but may have a square shape, for example.
  • the low acoustic velocity film is located away from the outer periphery of the substrate in plan view from the thickness direction of the substrate.
  • the third electronic component 6 further has an insulating layer.
  • the insulating layer covers a region of the sixth main surface of the substrate that is not covered with the low-temperature film.
  • the insulating layer has electrical insulation.
  • the insulating layer is formed along the outer periphery of the substrate on the sixth main surface of the substrate.
  • An insulating layer surrounds the plurality of IDT electrodes.
  • the insulating layer has a frame shape (for example, a rectangular frame shape).
  • a portion of the insulating layer overlaps the outer peripheral portion of the piezoelectric layer in the thickness direction of the third electronic component 6 .
  • the outer peripheral surface of the piezoelectric layer and the outer peripheral surface of the low sound velocity film are covered with an insulating layer.
  • the material of the insulating layer is epoxy resin, polyimide, or the like.
  • the material of the piezoelectric layer is, for example, lithium niobate or lithium tantalate.
  • the material of the low sound velocity film is, for example, silicon oxide.
  • the acoustic velocity of the bulk wave propagating through the low acoustic velocity film is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric layer.
  • the material of the low sound velocity film is not limited to silicon oxide, and includes, for example, silicon oxide, glass, silicon oxynitride, tantalum oxide, a compound obtained by adding fluorine, carbon, or boron to silicon oxide, or any of the above materials as a main component. It may be a material that
  • the third electronic component 6 that constitutes the filter may include, for example, an adhesion layer interposed between the low sound velocity film and the piezoelectric layer.
  • the adhesion layer is made of resin (epoxy resin, polyimide resin), for example.
  • the third electronic component 6 constituting the filter may have a dielectric film between the low-speed film and the piezoelectric layer, on the piezoelectric layer, or under the low-speed film.
  • the power amplifiers 191 and 192 shown in FIG. 3 are amplifiers that amplify transmission signals.
  • the power amplifiers 191 and 192 are provided between the fourth switches 201 and 202 and the plurality of transmission filters 141 to 143 in the transmission path T1 connecting the antenna terminal 101 and the fourth switches 201 and 202 .
  • the power amplifiers 191 and 192 have input terminals (not shown) and output terminals (not shown). Input terminals of the power amplifiers 191 and 192 are connected to the signal processing circuit 93 via fourth switches 201 and 202 . Output terminals of the power amplifiers 191 and 192 are connected to a plurality of transmission filters 141-143.
  • the power amplifiers 191 and 192 are controlled by the controller 210, for example.
  • the power amplifiers 191 and 192 may be directly or indirectly connected to the plurality of transmission filters 141-143.
  • power amplifiers 191 and 192 are connected to a plurality of transmission filters 141-143 via output matching circuits 181 and 182 and third switch 17.
  • FIG. 1
  • the transmission filters 141 to 143 shown in FIG. 3 are filters that pass transmission signals of different communication bands.
  • a plurality of transmission filters 141 to 143 are provided in a transmission path T1, which is a signal path through which transmission signals pass. More specifically, the plurality of transmission filters 141-143 are provided between the power amplifiers 191, 192 and the matching circuits 121-123 in the transmission path T1.
  • Each of the plurality of transmission filters 141 to 143 passes transmission signals in the transmission band of the corresponding communication band among the high frequency signals amplified by the power amplifiers 191 and 192 .
  • Output matching circuits 181 and 182 are provided between power amplifiers 191 and 192 and a plurality of transmission filters 141 to 143 in transmission path T1, as shown in FIG. there is
  • the output matching circuits 181 and 182 are circuits for impedance matching between the power amplifiers 191 and 192 and the plurality of transmission filters 141-143.
  • the third switch 17 shown in FIG. 3 switches the transmission filters connected to the power amplifiers 191 and 192 among the multiple transmission filters 141 to 143 .
  • the third switch 17 is a switch for switching paths to be connected to the power amplifiers 191 and 192 .
  • the third switch 17 has a first common terminal 174, a second common terminal 175, and a plurality of (three in the illustrated example) selection terminals 171-173.
  • the first common terminal 174 is connected to the power amplifier 191 .
  • the second common terminal 175 is connected to the power amplifier 192 .
  • the selection terminal 171 among the plurality of selection terminals 171 to 173 is connected to the transmission filter 141 .
  • a selection terminal 172 among the plurality of selection terminals 171 to 173 is connected to the transmission filter 142 .
  • a selection terminal 173 among the plurality of selection terminals 171 to 173 is connected to the transmission filter 143 .
  • a fourth switch 201 switches the connection state of a common terminal 203 and a plurality of selection terminals 204 and 205 .
  • the fourth switch 202 switches connection states between the common terminal 206 and the plurality of selection terminals 207 and 208 .
  • the fourth switch 201 electrically connects the common terminal 203 and any one of the plurality of selection terminals 204 and 205 according to the control signal from the RF signal processing circuit 931 of the signal processing circuit 93 .
  • the fourth switch 202 electrically connects the common terminal 206 and any one of the plurality of selection terminals 207 and 208 according to the control signal from the RF signal processing circuit 931 of the signal processing circuit 93 .
  • Controller The controller 210 controls the power amplifiers 191 and 192 according to control signals from the signal processing circuit 93, for example. Controller 210 is connected to power amplifiers 191 and 192 . Also, the controller 210 is connected to the signal processing circuit 93 via a plurality of (for example, four) control terminals. A plurality of control terminals are terminals for inputting control signals from an external circuit (for example, the signal processing circuit 93 ) to the controller 210 . The controller 210 controls the power amplifiers 191 and 192 based on control signals obtained from a plurality of control terminals. The control signals acquired by the controller 210 from the plurality of control terminals are digital signals.
  • the antenna matching circuit 92 is provided between the antenna 91 and the antenna terminal 101 of the high frequency module 1, as shown in FIG.
  • the antenna matching circuit 92 is a circuit for impedance matching between the antenna 91 and the high frequency module 1 .
  • the antenna matching circuit 92 is configured to include an inductor.
  • the RF signal processing circuit 931 is, for example, an RFIC (Radio Frequency Integrated Circuit).
  • the RF signal processing circuit 931 performs signal processing on high frequency signals.
  • the RF signal processing circuit 931 performs signal processing such as up-conversion on the high frequency signal output from the baseband signal processing circuit 932, and passes the processed high frequency signal through the fourth switches 201 and 202. Output to power amplifiers 191 and 192 .
  • the RF signal processing circuit 931 performs processing such as down-conversion on the high frequency signal output from the high frequency module 1 and outputs the processed high frequency signal to the baseband signal processing circuit 932 .
  • the baseband signal processing circuit 932 is, for example, a BBIC (Baseband Integrated Circuit).
  • the baseband signal processing circuit 932 performs predetermined signal processing on a transmission signal from outside the signal processing circuit 93 .
  • the received signal processed by the baseband signal processing circuit 932 is used, for example, as an image signal for displaying an image, or as an audio signal for calling.
  • the RF signal processing circuit 931 controls the third switch 17, the fourth switches 201 and 202, and the first switch 11 and the second switch included in the high frequency module based on transmission and reception of high frequency signals (transmission signal, reception signal). It also has a function as a control section that controls each connection of 15. Specifically, the RF signal processing circuit 931 controls the third switch 17, the fourth switches 201 and 202, and the first switch 11 and the second switch 15 of the high-frequency module in accordance with a control signal (not shown). connection. Note that the control unit may be provided outside the RF signal processing circuit 931, and may be provided in the high frequency module 1 or the baseband signal processing circuit 932, for example.
  • the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2 , and the second main surface 22 of the first mounting board 2 is provided with the first electronic component 4 .
  • 4 electronic components 7 are arranged.
  • the second mounting board 3 is positioned on the second main surface 22 of the first mounting board 2 .
  • the second electronic component 5 is arranged on the third main surface 31 of the second mounting board 3
  • the third electronic component 6 is arranged on the fourth main surface 32 of the second mounting board 3 . That is, the second electronic component 5 and the third electronic component 6 are arranged on the second main surface 22 of the first mounting board 2 . That is, the first electronic component 4, the second electronic component 5, and the third electronic component 6 overlap each other in plan view from the first direction D1. Therefore, the degree of integration of the high frequency module 1 can be improved and the size of the high frequency module 1 can be reduced.
  • An electronic component 4 is present. Therefore, in each of the second electronic component 5 , the third electronic component 6 , and the fourth electronic component 7 , at least part of the electromagnetic waves from the first mounting board 2 side is shielded by the first electronic component 4 . That is, in the high-frequency module 1, the deterioration of the signal quality of each of the second electronic component 5, the third electronic component 6, and the fourth electronic component 7 can be suppressed, and the electrical characteristics can be improved.
  • the area of the first electronic component 4 is the area of the second electronic component 5
  • the area of the third electronic component 6 is Both the area and the area of the fourth electronic component 7 are large.
  • the first electronic component 4 is arranged on the first main surface 21 side of the first mounting board 2 .
  • the second electronic component 5 , the third electronic component 6 , the fourth electronic component 7 , the second mounting board 3 , the internal connection terminals 20 , and the external connection terminals 10 are all connected to the first mounting board 2 . It is arranged on the second main surface 22 side.
  • the first electronic component can be placed in a position overlapping with 4. That is, compared to the case where the first electronic component 4 is arranged on the second main surface 22 side of the first mounting board 2, the high-frequency module 1 can be highly integrated and miniaturized.
  • the high-frequency module 1 according to Embodiment 1, only the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2 . Therefore, other electronic components are mounted as either the second electronic component 5 , the third electronic component 6 or the fourth electronic component 7 . Therefore, an increase in the area of the first mounting substrate 2 can be suppressed, and the high-frequency module 1 can be highly integrated and miniaturized.
  • the high-frequency module 1 by not arranging electronic components other than the first electronic component 4 on the first main surface 21 of the first mounting substrate 2 , a plurality of electronic components arranged on the first main surface 21 of the first mounting substrate 2 are In addition, there is no need to provide wiring via the first mounting board 2 . Therefore, in the high-frequency module 1 according to the first embodiment, it is possible to suppress the degradation of signal quality and improve the electrical characteristics of the high-frequency module 1 by reducing wiring between electronic components.
  • the first electronic component 4 is an IC component
  • each of the second electronic component 5, the third electronic component 6, and the fourth electronic component 7 is an electronic component other than the IC component. is. Since the first electronic component 4 is an IC component, the wiring between components of each circuit included in the first electronic component 4 can be stored inside the first electronic component 4, and the wiring path can be shortened. can. Further, since none of the second electronic component 5, the third electronic component 6, and the fourth electronic component 7 are IC components, it is not necessary to wire between the IC components. Therefore, it is possible to reduce the number of wirings in the first mounting board 2 , suppress degradation of signal quality, and improve the electrical characteristics of the high-frequency module 1 .
  • the distance from the second main surface 22 of the first mounting board 2 to the main surface of the fourth electronic component 7 opposite to the first mounting board 2 side is It is smaller than the distance from the second main surface 22 to the fifth main surface 61 of the third electronic component 6 on the side opposite to the second mounting substrate 3 side. Therefore, the height of the fourth electronic component 7 does not affect the height of the high frequency module 1 . That is, in the high-frequency module 1 according to the first embodiment, both miniaturization of the high-frequency module 1 and improvement of the electrical characteristics of the high-frequency module 1 by using a tall component as the fourth electronic component 7 can be achieved. .
  • the wiring from the matching circuits 121 to 123 to the reception filters 131 to 133 can be realized without going through the internal connection terminal 20 and the first mounting board 2 . That is, in the high-frequency module 1 according to the first embodiment, the deterioration of signal quality can be suppressed by shortening the wiring between electronic components. Therefore, the electrical characteristics of the high frequency module 1 can be improved.
  • the high-frequency module 1 since the high-frequency module 1 according to the first embodiment includes the reception filters 131 to 133 as the third electronic component 6, the height of the high-frequency module 1 can be easily reduced.
  • the reception filters 131 to 133 as the third electronic component 6 are elastic wave filters
  • the fifth main surface 61 of the third electronic component 6 opposite to the second mounting substrate 3 is made of silicon. It is the seventh main surface of the substrate opposite to the second mounting substrate 3 side. Therefore, when the entire outer peripheral surface of the third electronic component 6 is covered with the second resin layer 82 , the height of the high-frequency module 1 can be reduced by polishing the second resin layer 82 .
  • the fifth main surface 61 of the third electronic component 6 is exposed from the second resin layer 82, and the fifth main surface 61 of the third electronic component 6 and the second resin layer
  • the main surface 821 on the side opposite to the first mounting board 2 side of 82 can be coplanar. Therefore, the distance between the external board and the second mounting board 3 can be shortened, and the height of the high frequency module 1 can be reduced.
  • the main surface 41 of the first electronic component 4 and at least a portion of the external connection terminals 10 are covered with the first resin layer 81 and the second resin layer 82 . Therefore, it is possible to protect the high frequency module 1 from physical damage, improve heat dissipation, and improve the reliability of the high frequency module 1 .
  • the high-frequency module 1 according to the first embodiment, at least part of the main surface 41 of the first electronic component 4 and at least part of the outer peripheral surface 23 of the first mounting board 2 are covered with the metal electrode layer 9. there is Therefore, electromagnetic coupling between the high-frequency module 1 and the outside of the high-frequency module 1 can be suppressed, and shielding performance can be improved.
  • the metal electrode layer 9 is in contact with the main surface 41 and the outer peripheral surface 42 of the first electronic component 4. 1 (see FIG. 2).
  • the metal electrode layer 9 is formed on the main surface 41 of the first electronic component 4 opposite to the first mounting board 2 side, the outer peripheral surface 23 of the first mounting board 2, and a part of the outer peripheral surface 82a of the resin layer 8a. covering the
  • the metal electrode layer 9 is in direct contact with the main surface 41 of the first electronic component 4 . Therefore, the high-frequency module 1a can be further miniaturized, particularly reduced in height. Moreover, the thermal conductivity from the first electronic component 4 to the metal electrode layer 9 is improved, and the reliability of the high frequency module 1a can be improved.
  • Embodiment 3 A high-frequency module 1b according to Embodiment 3 will be described with reference to FIG. Regarding the high-frequency module 1b according to the third embodiment, the same reference numerals are given to the same configurations as those of the high-frequency module 1 according to the first embodiment, and the description thereof is omitted.
  • reception filters 131 to 133 are arranged on the third main surface 31 of the second mounting board 3 as the second electronic components 5a.
  • Components of matching circuits 121 to 123 are arranged on the fourth main surface 32 of the second mounting board 3 as the third electronic component 6a. Therefore, as in the first embodiment, the wiring from the matching circuits 121 to 123 to the reception filters 131 to 133 is connected to the conductive layer of the second mounting board 3, the conductive layer of the second mounting board 3, and the matching circuits 121 to 133. 123, and conductive portions (bumps, etc.) connecting the conductive layer of the second mounting board 3 and the reception filters 131 to 133.
  • the wiring from the matching circuits 121 to 123 to the reception filters 131 to 133 can be realized without going through the internal connection terminal 20 and the first mounting board 2 . That is, in the third embodiment as well, it is possible to suppress deterioration of the signal quality of the signal between the second electronic component 5a and the third electronic component 6a and improve the electrical characteristics of the high frequency module 1b.
  • the second resin layer 82 may cover the main surface of the third electronic component 6a on the side opposite to the second mounting substrate 3 side.
  • the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2, and the first mounting board 2
  • the fourth electronic component 7 is arranged on the second main surface 22 of the .
  • the second mounting board 3 is positioned on the second main surface 22 of the first mounting board 2 .
  • a second electronic component 5 a is arranged on the third main surface 31 of the second mounting board 3
  • a third electronic component 6 a is arranged on the fourth main surface 32 of the second mounting board 3 .
  • the first electronic component 4, the second electronic component 5a, and the third electronic component 6a overlap in plan view from the first direction D1. Therefore, the degree of integration of the high frequency module 1 can be improved and the size of the high frequency module 1a can be reduced.
  • Embodiment 4 A high-frequency module 1c according to Embodiment 4 will be described with reference to FIG. Regarding the high-frequency module 1c according to the fourth embodiment, the same components as those of the high-frequency module 1 according to the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the high-frequency module 1c according to the fourth embodiment differs from the high-frequency module 1 according to the first embodiment (see FIG. 2) in that external connection terminals include a first external connection terminal 10 and a second external connection terminal 10a. do.
  • the second external connection terminal 10a is arranged between the second mounting board 3 and the fourth electronic component 7 in plan view from the first direction D1.
  • the external connection terminals are arranged between the first external connection terminals 10, the second mounting substrate 3, and the fourth electronic component 7 in plan view from the first direction D1. and a second external connection terminal 10a. That is, the high-frequency module 1 c has the first external connection terminals 10 and the second external connection terminals 10 a arranged on the second main surface 22 of the first mounting board 2 . Both the first external connection terminal 10 and the second external connection terminal 10a are terminals for electrically connecting to an external circuit (for example, the signal processing circuit 93). The second external connection terminals 10 a are arranged between the second mounting substrate 3 and the fourth electronic component 7 .
  • the length of the second external connection terminal 10a in the first direction D1 is the length of the electromagnetic wave associated with the magnetic coupling between the fourth electronic component 7, the second mounting board 3, the second electronic component 5, and the third electronic component 6. It is preferably ⁇ /4 or less with respect to the wavelength ⁇ .
  • the second external connection terminals 10a arranged between the second mounting substrate 3 and the fourth electronic component 7 are arranged in a plan view from the first direction D1. 1 or more. Therefore, magnetic coupling between the fourth electronic component 7 and the second mounting substrate 3, the second electronic component 5, and the third electronic component 6 can be suppressed, and the electrical characteristics of the high frequency module 1c can be improved.
  • each of the plurality of reception filters 131 to 133 according to Embodiments 1 to 4 is not limited to ladder filters, and may be, for example, longitudinally coupled resonator surface acoustic wave filters.
  • acoustic wave filter is an acoustic wave filter that utilizes surface acoustic waves or bulk acoustic waves, it is not limited to this, and may be an acoustic wave filter that utilizes boundary acoustic waves, plate waves, or the like, for example. good.
  • the communication device 90 according to Embodiments 1 to 4 may include any one of the high-frequency modules 1a, 1b, and 1c instead of the high-frequency module 1.
  • the high-frequency modules 1, 1a, 1b, and 1c according to Embodiments 1 to 4 may be transmission/reception modules further including transmission filters 141 to 143, power amplifiers 191 and 192, and the like.
  • the high-frequency modules 1, 1a, and 1b may include second external connection terminals 10a.
  • the high-frequency modules 1, 1a, 1b, and 1c may not include the metal electrode layer 9. Further, the high-frequency modules 1, 1b, and 1c may not include the second resin layer 82, and similarly, the high-frequency module 1a may not include the resin layer 8a.
  • the number of second electronic components 5 and third electronic components 6 is not limited to three, and may be any number.
  • the element is disposed on the second major surface of the substrate means not only when the element is mounted directly on the second major surface of the substrate, but also when the element is mounted on the first major surface separated by the substrate. Of the space on the side of the main surface and the space on the side of the second main surface, the case where the element is arranged in the space on the side of the second main surface is included. In other words, “the element is arranged on the second main surface of the substrate” includes the case where the element is mounted on the second main surface of the substrate via other circuit elements, electrodes, or the like.
  • the elements are, for example, the second electronic component 5 , the third electronic component 6 and the fourth electronic component 7 , but are not limited to the second electronic component 5 , the third electronic component 6 and the fourth electronic component 7 .
  • the board is, for example, the first mounting board 2 .
  • the substrate is the first mounting substrate 2
  • the first major surface is the first major surface 21
  • the second major surface is the second major surface 22 .
  • the element is arranged on the fourth major surface of the substrate means not only when the element is mounted directly on the fourth major surface of the substrate, but also when the element is mounted directly on the fourth major surface of the substrate. Of the space on the side of the main surface and the space on the side of the fourth main surface, the case where the element is arranged in the space on the side of the fourth main surface is included. In other words, “the element is arranged on the fourth main surface of the substrate” includes the case where the element is mounted on the fourth main surface of the substrate via other circuit elements, electrodes, or the like.
  • the element is, for example, the third electronic component 6 , but is not limited to the third electronic component 6 .
  • the board is, for example, the second mounting board 3 . When the substrate is the second mounting substrate 3 , the third main surface is the third main surface 31 and the fourth main surface is the fourth main surface 32 .
  • the element is located on the second major surface of the substrate means not only when the element is mounted directly on the second major surface of the substrate, but also when the element is mounted on the second major surface of the substrate. This includes the case where the element is located in the space on the side of the second principal surface, out of the space on the side of the first principal surface and the space on the side of the second principal surface.
  • the element is located on the second main surface of the substrate means that the element is located separated from the second main surface of the substrate via another circuit element, resin, or the like.
  • the element is, for example, the second mounting board 3 , but is not limited to the second mounting board 3 .
  • the board is, for example, the first mounting board 2 .
  • the element is arranged on the second major surface of the substrate means not only when the element is mounted directly on the second major surface of the substrate, but also when the element is mounted on the second major surface of the substrate. This includes the case where the element is arranged in the space on the side of the second principal surface, out of the space on the side of the first principal surface and the space on the side of the second principal surface.
  • the element is arranged on the second main surface of the substrate means that the element is separated from the second main surface of the substrate via another circuit element, resin, or the like.
  • Elements are, for example, the second electronic component 5 and the third electronic component 6 , but are not limited to the second electronic component 5 and the third electronic component 6 .
  • the board is, for example, the first mounting board 2 . When the substrate is the first mounting substrate 2 , the first major surface is the first major surface 21 and the second major surface is the second major surface 22 .
  • a high-frequency module (1; 1a; 1b; 1c) includes a first mounting board (2), a first electronic component (4), a second electronic component (5; 5a) and a third electronic component. It comprises components (6:6a), external connection terminals (10), and a second mounting board (3).
  • the first mounting board (2) has a first main surface (21) and a second main surface (22) facing each other.
  • the first electronic component (4) is arranged on the first main surface (21) of the first mounting board (2).
  • the second electronic component (5; 5a) and the third electronic component (6; 6a) are arranged on the second main surface (22) of the first mounting board (2).
  • the external connection terminals (10) are arranged on the second main surface (22) of the first mounting board (2).
  • the second mounting board (3) is located on the second main surface (22) of the first mounting board (2).
  • the second mounting board (3) has a third main surface (31) and a fourth main surface (32).
  • the third main surface (31) faces the second main surface (22) of the first mounting board (2).
  • the fourth main surface (32) faces the third main surface (31).
  • the second electronic component (5; 5a) is arranged on the third main surface (31) of the second mounting board (3).
  • the third electronic component (6; 6a) is arranged on the fourth main surface (32) of the second mounting board (3).
  • the electronic components are arranged on both main surfaces of the first mounting board (2) and the second mounting board (3), the size of the high frequency module (1; 1a; 1b; 1c) is reduced. can be improved.
  • the second mounting board (3) has a third main surface (31) and a fourth main surface (32). It has a conductive part that penetrates between and connects the second electronic component (5; 5a) and the third electronic component (6; 6a).
  • the wiring distance between the second electronic component (5; 5a) and the third electronic component (6; 6a) can be shortened, and the electrical characteristics of the high-frequency module (1; 1a; 1b; 1c) can be improved. can be improved.
  • the first The area of the electronic component (4) is larger than both the area of the second electronic component (5; 5a) and the area of the third electronic component (6; 6a).
  • a high-frequency module (1; 1a; 1b; 1c) according to a fourth aspect further includes a fourth electronic component (7) in any one of the first to third aspects.
  • the fourth electronic component (7) is arranged on the second main surface (22) of the first mounting board (2).
  • the distance to the opposite principal surface is greater than the distance from the second principal surface (22) of the first mounting substrate (2) to the fourth principal surface (32) of the second mounting substrate (3), and It is smaller than the distance from the second main surface (22) of the first mounting board (2) to the main surface (61) of the third electronic component (6) opposite to the second mounting board (3) side.
  • a high-frequency module (1c) in the fourth aspect, further comprises a second external connection terminal (10a) different from the first external connection terminal (10) which is the external connection terminal (10). .
  • the second external connection terminal (10a) is arranged on the second main surface (22) of the first mounting board (2) and between the fourth electronic component (7) and the second mounting board (3). To position.
  • the second electronic component (5), the third electronic component (6), and the fourth electronic component (7) arranged on the second mounting board (3) and the second mounting board (3) can be suppressed by the second external connection terminal (10a). Therefore, signal deterioration in the high frequency module (1c) can be suppressed.
  • the first electronic component (4) is an IC component
  • the second electronic component (5; 5a) and the third electronic component (6; 6a) are both components other than IC components.
  • a plurality of electrical functions can be accommodated in the first electronic component (4). Moreover, since the wiring distance can be shortened compared to a high frequency module having a plurality of IC parts, the characteristics of the high frequency module (1; 1a; 1b; 1c) can be improved.
  • the first main surface (21) of the first mounting substrate (2) has , only the first electronic component (4) is arranged.
  • the electronic components other than the first electronic component (4) are arranged on the surface other than the first main surface (21) of the first mounting board (2), the thickness of the first mounting board (2) It is possible to reduce the area of the first mounting board (2) in plan view from the vertical direction (D1). Therefore, further miniaturization of the high-frequency module (1; 1a; 1b; 1c) can be achieved.
  • the high-frequency module (1; 1a; 1b; 1c) according to the tenth aspect further comprises a metal electrode layer (9) in any one of the first to ninth aspects.
  • the metal electrode layer (9) is formed on at least a part of the main surface (41) of the first electronic component (4) opposite to the first mounting board (2) and the outer peripheral surface of the first mounting board (2). (23) at least partially.
  • the shielding properties of the high-frequency module (1; 1a; 1b; 1c) can be improved.
  • the third electronic component (6; 6a) includes the second mounting board (3 ) and has a fifth main surface (61) which is the opposite main surface. The fifth main surface (61) of the third electronic component (6; 6a) is exposed.
  • the first mounting substrate (2) is a multilayer substrate.
  • the thickness (W2) of the second mounting board (3) is thinner than the thickness (W1) of the first mounting board (2).
  • the board area can be reduced, and the second mounting board (3) with fewer connection wirings than the first mounting board (2) can be used.
  • the number of laminations and thinning it is possible to reduce the overall height of the high frequency module (1; 1a; 1b; 1c).
  • the filters (131-133) and the matching circuits (121-123) can be connected via the second mounting board (3). Therefore, the wiring length between the filters (131-133) and the matching circuits (121-123) can be shortened, and the electrical characteristics of the high frequency module (1b) can be improved.
  • the third electronic component (6) is a filter (131-133).
  • the second electronic component (5) is a component of a matching circuit (121-123) connected to the third electronic component (6).
  • the third electronic component (6) is an elastic wave filter.
  • the electronic components are arranged on both main surfaces of the first mounting board (2) and the second mounting board (3). Miniaturization of the module (1; 1a; 1b; 1c) can be achieved.

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Abstract

Provided are a high frequency module having a reduced size, and a communication device. A high frequency module (1) comprises: a first mounting substrate (2); a first electronic component (4), a second electronic component (5), and a third electronic component (6); an external connection terminal (10); and a second mounting substrate (3). The first mounting substrate (2) has a first major surface (21) and a second major surface (22) opposing each other. The first electronic component (4) is disposed on the first major surface (21) and the external connection terminal (10) is disposed on the second major surface (22) of the first mounting substrate (2). The second mounting substrate (3) is positioned on the second major surface (22) of the first mounting substrate (2). The second mounting substrate (3) has a third major surface (31) and a fourth major surface (32) opposing each other. The third major surface (31) is opposite the second major surface (22) of the first mounting substrate (2). The second electronic component (5) is disposed on the third major surface (31) and the third electronic component (6) is disposed on the fourth major surface (32) of the second mounting substrate (3).

Description

高周波モジュール、及び、通信装置High frequency module and communication device
　本発明は、一般に高周波モジュール及び通信装置に関し、より詳細には、実装基板を備える高周波モジュール、及び、通信装置に関する。 The present invention generally relates to high-frequency modules and communication devices, and more particularly to high-frequency modules and communication devices including mounting substrates.
　特許文献１には、実装基板と、電力増幅器（パワーアンプ）と、整合回路と、フィルタと、アンテナスイッチとを備える高周波モジュールが記載されている。実装基板は、互いに対向する第１主面及び第２主面を有する。実装基板の第１主面には、電力増幅器（パワーアンプ）と、整合回路と、フィルタと、アンテナスイッチとのうち１以上を含む部品が実装されている。実装基板の第２主面には、電力増幅器（パワーアンプ）と、整合回路と、フィルタと、アンテナスイッチとのうち１以上を含む下側部品が実装されている。 Patent Document 1 describes a high-frequency module that includes a mounting board, a power amplifier, a matching circuit, a filter, and an antenna switch. The mounting substrate has a first main surface and a second main surface facing each other. Components including one or more of a power amplifier (power amplifier), a matching circuit, a filter, and an antenna switch are mounted on the first main surface of the mounting substrate. Lower components including one or more of a power amplifier, a matching circuit, a filter, and an antenna switch are mounted on the second main surface of the mounting substrate.
特開２０１７－２００１８３号公報JP 2017-200183 A
　しかしながら、近年、高周波モジュールの更なる小型化が要求されている。 However, in recent years, there has been a demand for further miniaturization of high-frequency modules.
　本発明は、小型化を行うことができる高周波モジュール、及び、通信装置を提供することを目的とする。 An object of the present invention is to provide a high-frequency module and a communication device that can be miniaturized.
　本発明の一態様に係る高周波モジュールは、第１実装基板と、第１電子部品と、第２電子部品及び第３電子部品と、外部接続端子と、第２実装基板と、を備える。前記第１実装基板は、互いに対向する第１主面及び第２主面を有する。前記第１電子部品は、前記第１実装基板の前記第１主面に配置されている。前記第２電子部品及び前記第３電子部品は、前記第１実装基板の前記第２主面上に配置されている。前記外部接続端子は、前記第１実装基板の前記第２主面に配置されている。前記第２実装基板は、前記第１実装基板の前記第２主面上に位置している。前記第２実装基板は、第３主面と、第４主面と、を有する。前記第３主面は、前記第１実装基板の前記第２主面に対向する。前記第４主面は、前記第３主面に対向する。前記第２電子部品は、前記第２実装基板の前記第３主面に配置されている。前記第３電子部品は、前記第２実装基板の前記第４主面に配置されている。 A high-frequency module according to one aspect of the present invention includes a first mounting board, a first electronic component, second and third electronic components, external connection terminals, and a second mounting board. The first mounting substrate has a first main surface and a second main surface facing each other. The first electronic component is arranged on the first main surface of the first mounting board. The second electronic component and the third electronic component are arranged on the second main surface of the first mounting substrate. The external connection terminals are arranged on the second main surface of the first mounting board. The second mounting board is located on the second main surface of the first mounting board. The second mounting board has a third principal surface and a fourth principal surface. The third main surface faces the second main surface of the first mounting substrate. The fourth main surface faces the third main surface. The second electronic component is arranged on the third main surface of the second mounting substrate. The third electronic component is arranged on the fourth main surface of the second mounting substrate.
　本発明の一態様に係る通信装置は、前記高周波モジュールと、信号処理回路と、を備える。前記信号処理回路は、前記高周波モジュールに接続されている。 A communication device according to an aspect of the present invention includes the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high frequency module.
　本発明の一態様に係る高周波モジュール及び通信装置によれば、高周波モジュールの小型化を図ることができる。 According to the high-frequency module and the communication device according to one aspect of the present invention, it is possible to reduce the size of the high-frequency module.
図１は、実施形態１に係る高周波モジュールのうち第１実装基板より第２実装基板側を示す概略図である。FIG. 1 is a schematic diagram showing a second mounting board side from a first mounting board in a high-frequency module according to Embodiment 1. FIG. 図２は、同上の高周波モジュールを示し、図１のＸ－Ｘ線断面図である。FIG. 2 is a cross-sectional view taken along the line XX of FIG. 1, showing the same high-frequency module. 図３は、同上の高周波モジュールを備える通信装置の回路構成図である。FIG. 3 is a circuit configuration diagram of a communication device provided with the same high-frequency module. 図４は、実施形態２に係る高周波モジュールの断面図である。FIG. 4 is a cross-sectional view of a high-frequency module according to Embodiment 2. FIG. 図５は、実施形態３に係る高周波モジュールの断面図である。FIG. 5 is a cross-sectional view of a high-frequency module according to Embodiment 3. FIG. 図６は、実施形態４に係る高周波モジュールの断面図である。FIG. 6 is a cross-sectional view of a high-frequency module according to Embodiment 4. FIG.
　以下、実施形態１～４に係る高周波モジュール及び通信装置について、図面を参照して説明する。以下の実施形態等において参照する図１、図２、図４～６は、いずれも模式的な図であり、図中の構成要素の大きさや厚さそれぞれの比が、必ずしも実際の寸法比を反映しているとは限らない。 The high-frequency modules and communication devices according to Embodiments 1 to 4 will be described below with reference to the drawings. 1, 2, and 4 to 6, which are referred to in the following embodiments, etc., are all schematic diagrams, and the ratios of the sizes and thicknesses of the constituent elements in the diagrams do not necessarily correspond to the actual dimensional ratios. It doesn't necessarily reflect that.
　（実施形態１）
　（１）高周波モジュール
　実施形態１に係る高周波モジュール１は、例えば、図１及び２に示すように、第１実装基板２と、第２実装基板３と、第１電子部品４と、第２電子部品５と、第３電子部品６と、第４電子部品７と、を備える。第１実装基板２は、互いに対向する第１主面２１及び第２主面２２を有する。第１電子部品４は、第１実装基板２の第１主面２１に配置されている。第２実装基板３は、互いに対向する第３主面３１及び第４主面３２を有する。第１実装基板２の第２主面２２と、第２実装基板３の第３主面３１とは、互いに対向する。第２電子部品５は、第２実装基板３の第３主面３１に配置されている。第３電子部品６は、第２実装基板３の第４主面３２に配置されている。第４電子部品７は、第１実装基板２の第２主面２２に配置されている。 (Embodiment 1)
(1) High Frequency Module The high frequency module 1 according to the first embodiment includes, for example, a first mounting board 2, a second mounting board 3, a first electronic component 4, a second electronic component, as shown in FIGS. A component 5 , a third electronic component 6 and a fourth electronic component 7 are provided. The first mounting board 2 has a first main surface 21 and a second main surface 22 facing each other. The first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2 . The second mounting board 3 has a third main surface 31 and a fourth main surface 32 facing each other. The second main surface 22 of the first mounting board 2 and the third main surface 31 of the second mounting board 3 face each other. The second electronic component 5 is arranged on the third main surface 31 of the second mounting board 3 . The third electronic component 6 is arranged on the fourth main surface 32 of the second mounting board 3 . The fourth electronic component 7 is arranged on the second main surface 22 of the first mounting board 2 .
　図１は、第１電子部品４と第１実装基板２とを省略し、高周波モジュール１の第１実装基板２より第２主面２２側を透視した概略図である。図２は、第１実装基板２の厚さ方向に沿った高周波モジュール１の断面図であり、図１のＸ－Ｘ断面に対応する。本実施形態では、第１実装基板２の厚さ方向を第１方向Ｄ１という。図２に示すように、第１方向Ｄ１に直交する第２方向Ｄ２において、第１電子部品４の長さは、第２電子部品５の長さ、第３電子部品６の長さ、第４電子部品７の長さのいずれよりも大きい。また、図１には示されていないが、第１方向Ｄ１と第２方向Ｄ２とに直交する第３方向Ｄ３において、第１電子部品４の長さは、第２電子部品５の長さ、第３電子部品６の長さ、第４電子部品７の長さのいずれよりも大きい。したがって、実施形態１に係る高周波モジュール１では、第１方向Ｄ１からの平面視において、第１電子部品４の面積は、第２電子部品５の面積と、第３電子部品６の面積と、第４電子部品７の面積とのいずれよりも大きい。言い換えると、第１方向Ｄ１からの平面視において、第１電子部品４は、高周波モジュール１の部品の中で最も主面の面積が大きい。 FIG. 1 is a schematic view of the high-frequency module 1, omitting the first electronic component 4 and the first mounting board 2, looking through the second main surface 22 side of the first mounting board 2. FIG. FIG. 2 is a cross-sectional view of the high-frequency module 1 along the thickness direction of the first mounting board 2, corresponding to the XX cross section of FIG. In this embodiment, the thickness direction of the first mounting board 2 is referred to as a first direction D1. As shown in FIG. 2, in a second direction D2 orthogonal to the first direction D1, the length of the first electronic component 4 is the length of the second electronic component 5, the length of the third electronic component 6, and the length of the fourth electronic component 6. greater than any of the lengths of the electronic component 7. Although not shown in FIG. 1, in a third direction D3 perpendicular to the first direction D1 and the second direction D2, the length of the first electronic component 4 is the length of the second electronic component 5, It is longer than both the length of the third electronic component 6 and the length of the fourth electronic component 7 . Therefore, in the high-frequency module 1 according to Embodiment 1, in plan view from the first direction D1, the area of the first electronic component 4 is the area of the second electronic component 5, the area of the third electronic component 6, and the area of the third electronic component 6. 4 larger than the area of the electronic component 7 . In other words, the first electronic component 4 has the largest main surface area among the components of the high-frequency module 1 in a plan view from the first direction D1.
　また、実施形態１に係る高周波モジュール１では、第１方向Ｄ１からの平面視において、第４電子部品７は、第２実装基板３、第２電子部品５、第３電子部品６のいずれとも重ならない。また、第１方向Ｄ１において、第１実装基板２の第２主面２２から、第４電子部品７の第１実装基板２側とは反対側の主面までの距離は、第１実装基板２の第２主面２２から第２実装基板３の第４主面３２までの距離よりも大きい。また、第１方向Ｄ１において、第１実装基板２の第２主面２２から、第４電子部品７の第１実装基板２側とは反対側の主面までの距離は、第１実装基板２の第２主面２２から、第３電子部品６の第２実装基板３側とは反対側の主面６１までの距離よりも小さい。 Further, in the high-frequency module 1 according to the first embodiment, the fourth electronic component 7 overlaps with any of the second mounting substrate 3, the second electronic component 5, and the third electronic component 6 in a plan view from the first direction D1. not. Further, in the first direction D1, the distance from the second main surface 22 of the first mounting board 2 to the main surface of the fourth electronic component 7 opposite to the first mounting board 2 side is is greater than the distance from the second main surface 22 of the second mounting board 3 to the fourth main surface 32 of the second mounting board 3 . Further, in the first direction D1, the distance from the second main surface 22 of the first mounting board 2 to the main surface of the fourth electronic component 7 opposite to the first mounting board 2 side is from the second main surface 22 of the third electronic component 6 to the main surface 61 of the third electronic component 6 opposite to the second mounting board 3 side.
　また、実施形態１に係る高周波モジュール１では、第１実装基板２の第２主面２２と、第２実装基板３の第３主面３１とは、互いに対向する。言い換えると、第２実装基板３は、第１実装基板２の第２主面２２上に位置している。「第２実装基板３は、第１実装基板２の第２主面２２上に位置している」とは、第１方向Ｄ１において、第２実装基板３が、第１実装基板２の第２主面２２に接している場合と、第１実装基板２の第２主面２２から離れている場合と、を含む。実施形態１に係る高周波モジュール１では、第１方向Ｄ１において第２実装基板３は第１実装基板２の第２主面２２から離れており、かつ、第１方向Ｄ１からの平面視において、第２実装基板３は第１実装基板２と重なる。 Also, in the high-frequency module 1 according to Embodiment 1, the second main surface 22 of the first mounting board 2 and the third main surface 31 of the second mounting board 3 face each other. In other words, the second mounting board 3 is positioned on the second major surface 22 of the first mounting board 2 . "The second mounting board 3 is located on the second main surface 22 of the first mounting board 2" means that the second mounting board 3 is located on the second main surface 22 of the first mounting board 2 in the first direction D1. It includes the case where it is in contact with the main surface 22 and the case where it is separated from the second main surface 22 of the first mounting board 2 . In the high-frequency module 1 according to Embodiment 1, the second mounting board 3 is separated from the second main surface 22 of the first mounting board 2 in the first direction D1, and in plan view from the first direction D1, The second mounting board 3 overlaps the first mounting board 2 .
　また、実施形態１に係る高周波モジュール１では、第２電子部品５は第１実装基板２の第２主面２２上に配置されている。「第２電子部品５は第１実装基板２の第２主面２２上に配置されている」とは、第１方向Ｄ１において、第２電子部品５が、第１実装基板２の第２主面２２に接している場合と、第１実装基板２の第２主面２２から離れている場合と、を含む。実施形態１に係る高周波モジュール１では、第１方向Ｄ１において第２電子部品５は第１実装基板２の第２主面２２から離れており、かつ、第１方向Ｄ１からの平面視において、第２電子部品５は第１実装基板２と重なる。同様に、第３電子部品６は第１実装基板２の第２主面２２上に配置されている。 Also, in the high-frequency module 1 according to the first embodiment, the second electronic component 5 is arranged on the second main surface 22 of the first mounting substrate 2 . "The second electronic component 5 is arranged on the second main surface 22 of the first mounting board 2" means that the second electronic component 5 is located on the second main surface 22 of the first mounting board 2 in the first direction D1. It includes the case where it is in contact with the surface 22 and the case where it is separated from the second main surface 22 of the first mounting board 2 . In the high-frequency module 1 according to Embodiment 1, the second electronic component 5 is separated from the second main surface 22 of the first mounting board 2 in the first direction D1, and in plan view from the first direction D1, 2 The electronic component 5 overlaps the first mounting substrate 2 . Similarly, the third electronic component 6 is arranged on the second main surface 22 of the first mounting board 2 .
　高周波モジュール１は、図３に示すように、例えば、通信装置９０に用いられる。通信装置９０は、例えば、スマートフォンのような携帯電話である。なお、通信装置９０は、携帯電話であることに限定されず、例えば、スマートウォッチのようなウェアラブル端末等であってもよい。高周波モジュール１は、例えば、４Ｇ（第４世代移動通信）規格、５Ｇ（第５世代移動通信）規格等に対応可能なモジュールである。４Ｇ規格は、例えば、３ＧＰＰ（登録商標、Third Generation Partnership Project）　ＬＴＥ（登録商標、Long Term Evolution）規格である。５Ｇ規格は、例えば、５Ｇ　ＮＲ（New Radio）である。高周波モジュール１は、例えば、キャリアアグリケーション及びデュアルコネクティビティに対応可能なモジュールである。 The high-frequency module 1 is used, for example, in a communication device 90, as shown in FIG. The communication device 90 is, for example, a mobile phone such as a smart phone. Note that the communication device 90 is not limited to being a mobile phone, and may be, for example, a wearable terminal such as a smartwatch. The high-frequency module 1 is a module compatible with, for example, the 4G (fourth generation mobile communication) standard, the 5G (fifth generation mobile communication) standard, and the like. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The radio frequency module 1 is, for example, a module capable of supporting carrier aggregation and dual connectivity.
　通信装置９０は、複数の通信バンドの通信を行う。より詳細には、通信装置９０は、複数の通信バンドの送信信号の送信、及び、複数の通信バンドの受信信号の受信を行う。 The communication device 90 performs communication in a plurality of communication bands. More specifically, the communication device 90 transmits transmission signals in a plurality of communication bands and receives reception signals in a plurality of communication bands.
　複数の通信バンドの送信信号及び受信信号の一部は、ＦＤＤ（Frequency Division Duplex）の信号である。なお、複数の通信バンドの送信信号及び受信信号は、ＦＤＤの信号に限定されず、ＴＤＤ（Time Division Duplex）の信号であってもよい。ＦＤＤは、無線通信における送信と受信とに異なる周波数帯域を割り当てて、送信及び受信を行う無線通信技術である。ＴＤＤは、無線通信における送信と受信とに同一の周波数帯域を割り当てて、送信と受信とを時間ごとに切り替えて行う無線通信技術である。 Some of the transmission signals and reception signals of multiple communication bands are FDD (Frequency Division Duplex) signals. Note that the transmission signals and reception signals of a plurality of communication bands are not limited to FDD signals, and may be TDD (Time Division Duplex) signals. FDD is a wireless communication technology that allocates different frequency bands for transmission and reception in wireless communication and performs transmission and reception. TDD is a wireless communication technology that allocates the same frequency band to transmission and reception in wireless communication and switches between transmission and reception every time.
　（２）高周波モジュールの回路構成
　以下、実施形態１に係る高周波モジュール１の回路構成について、図３を参照して説明する。 (2) Circuit Configuration of High-Frequency Module Hereinafter, the circuit configuration of the high-frequency module 1 according to the first embodiment will be described with reference to FIG.
　高周波モジュール１は、例えば、アンテナ９１から入力された受信信号を増幅して信号処理回路９３に出力できるように構成されている。信号処理回路９３は、高周波モジュール１の構成要素ではなく、高周波モジュール１を備える通信装置９０の構成要素である。高周波モジュール１は、例えば、通信装置９０の備える信号処理回路９３によって制御される。 The high-frequency module 1 is configured, for example, to amplify the received signal input from the antenna 91 and output it to the signal processing circuit 93 . The signal processing circuit 93 is not a component of the high frequency module 1 but a component of the communication device 90 including the high frequency module 1 . The high frequency module 1 is controlled by, for example, a signal processing circuit 93 provided in the communication device 90 .
　実施形態１に係る高周波モジュール１は、第１スイッチ１１と、複数（図示例では３つ）の整合回路１２１～１２３と、複数（図示例では３つ）の受信フィルタ１３１～１３３と、第２スイッチ１５と、ローノイズアンプ１６１と、を備える。また、ローノイズアンプ１６１の入力側には、２つのインダクタ１６２が接続される（図３では１つのみを図示）。高周波モジュール１では、２つのインダクタ１６２の各々が、上述の第４電子部品７を構成している（図２参照）。また、高周波モジュール１では、整合回路１２１～１２３の各々が、上述の第２電子部品５を構成し、複数の受信フィルタ１３１～１３３の各々が、上述の第３電子部品６を構成している（図１及び図２参照）。第１電子部品４は、第１スイッチ１１と、ローノイズアンプ１６１と、第２スイッチ１５と、を含むＩＣチップである。 The high-frequency module 1 according to the first embodiment includes a first switch 11, a plurality of (three in the illustrated example) matching circuits 121 to 123, a plurality of (three in the illustrated example) reception filters 131 to 133, and a second A switch 15 and a low noise amplifier 161 are provided. Two inductors 162 are connected to the input side of the low noise amplifier 161 (only one is shown in FIG. 3). In the high-frequency module 1, each of the two inductors 162 constitutes the above-described fourth electronic component 7 (see FIG. 2). Further, in the high frequency module 1, each of the matching circuits 121 to 123 constitutes the second electronic component 5 described above, and each of the plurality of reception filters 131 to 133 constitutes the third electronic component 6 described above. (See Figures 1 and 2). The first electronic component 4 is an IC chip including the first switch 11 , the low noise amplifier 161 and the second switch 15 .
　（２．１）受信フィルタ
　図３に示す複数の受信フィルタ１３１～１３３は、互いに異なる通信バンドの受信信号を通過させるフィルタである。受信フィルタ１３１～１３３は、受信信号が通る信号経路である受信経路Ｒ１に設けられている。より詳細には、複数の受信フィルタ１３１～１３３は、整合回路１２１～１２３とローノイズアンプ１６１との間に設けられている。複数の受信フィルタ１３１～１３３の各々は、整合回路１２１～１２３から入力された高周波信号のうち、対応する受信バンドの受信帯域の受信信号を通過させる。 (2.1) Receive Filters The plurality of receive filters 131 to 133 shown in FIG. 3 are filters that pass received signals of communication bands different from each other. The reception filters 131 to 133 are provided in a reception path R1, which is a signal path through which reception signals pass. More specifically, a plurality of receive filters 131 - 133 are provided between matching circuits 121 - 123 and low noise amplifier 161 . Each of the plurality of reception filters 131-133 passes the reception signal in the reception band of the corresponding reception band among the high-frequency signals input from the matching circuits 121-123.
　受信フィルタ１３１～１３３のそれぞれは、例えば、複数の弾性波フィルタを含む構成である。 Each of the reception filters 131 to 133 has, for example, a configuration including a plurality of elastic wave filters.
　（２．２）ローノイズアンプ
　図３に示すローノイズアンプ１６１は、受信信号を低雑音で増幅する増幅器である。ローノイズアンプ１６１は、受信経路Ｒ１のうち複数の受信フィルタ１３１～１３３と信号出力端子１０２との間に設けられている。ローノイズアンプ１６１は、入力端子（図示せず）及び出力端子（図示せず）を有する。ローノイズアンプ１６１の入力端子は、整合回路であるインダクタ１６２に接続され、インダクタ１６２と後述の第２スイッチ１５とを介して受信フィルタ１３１～１３３に接続されている。ローノイズアンプ１６１の出力端子は、信号出力端子１０２を介して外部回路（例えば、信号処理回路９３）に接続される。 (2.2) Low Noise Amplifier The low noise amplifier 161 shown in FIG. 3 is an amplifier that amplifies a received signal with low noise. The low-noise amplifier 161 is provided between the plurality of reception filters 131 to 133 and the signal output terminal 102 in the reception path R1. The low noise amplifier 161 has an input terminal (not shown) and an output terminal (not shown). An input terminal of the low-noise amplifier 161 is connected to an inductor 162, which is a matching circuit, and is connected to the reception filters 131 to 133 via the inductor 162 and a second switch 15, which will be described later. An output terminal of the low noise amplifier 161 is connected to an external circuit (for example, the signal processing circuit 93) via the signal output terminal 102. FIG.
　（２．３）整合回路
　図３に示す複数の整合回路１２１～１２３は、整合回路１２１～１２３を介して接続されている回路のインピーダンス整合を取るための回路である。整合回路１２１～１２３は通信バンドごとに、受信フィルタ１３１～１３３及び送信フィルタ１４１～１４３と、第１スイッチ１１との間に設けられている。送信フィルタ１４１～１４３は、後述するように、高周波モジュール１の構成要素ではなく、高周波モジュール１を備える通信装置９０の構成要素である。整合回路１２１～１２３は、受信フィルタ１３１～１３３及び送信フィルタ１４１～１４３と第１スイッチ１１とのインピーダンス整合を取るための回路である。 (2.3) Matching Circuits A plurality of matching circuits 121 to 123 shown in FIG. 3 are circuits for impedance matching of circuits connected via the matching circuits 121 to 123 . The matching circuits 121 to 123 are provided between the reception filters 131 to 133 and the transmission filters 141 to 143 and the first switch 11 for each communication band. The transmission filters 141 to 143 are not components of the high-frequency module 1, but components of the communication device 90 including the high-frequency module 1, as will be described later. The matching circuits 121 to 123 are circuits for impedance matching between the reception filters 131 to 133 and the transmission filters 141 to 143 and the first switch 11 .
　整合回路１２１～１２３は、例えば、インダクタを含む構成である。整合回路１２１～１２３のインダクタは、例えば、送信経路Ｔ１における、後述するパワーアンプ１９１及び１９２の出力側、及び、受信経路Ｒ１における、受信フィルタ１３１～１３３の入力側、のそれぞれに設けられている。なお、整合回路１２１～１２３は、２つのインダクタを含む構成に限定されず、例えば、１または３以上のインダクタを含む構成であってもよいし、１以上のキャパシタを含む構成であってもよい。 The matching circuits 121 to 123 are configured to include inductors, for example. The inductors of the matching circuits 121 to 123 are provided, for example, on the output sides of power amplifiers 191 and 192, which will be described later, in the transmission path T1, and on the input sides of the reception filters 131 to 133 in the reception path R1. . Note that the matching circuits 121 to 123 are not limited to configurations including two inductors, and may include, for example, one or three or more inductors, or may include one or more capacitors. .
　（２．４）第１スイッチ
　図３に示す第１スイッチ１１は、複数の受信フィルタ１３１～１３３の中からアンテナ端子１０１に接続される受信フィルタを切り替える。また、第１スイッチ１１は、複数の送信フィルタ１４１～１４３の中からアンテナ端子１０１に接続される送信フィルタを切り替える。つまり、第１スイッチ１１は、アンテナ９１に接続させる経路を切り替えるためのスイッチである。第１スイッチ１１は、共通端子１１１と、複数（図示例では３つ）の選択端子１１２～１１４と、を有する。共通端子１１１は、アンテナ端子１０１に接続されている。複数の選択端子１１２～１１４のうち選択端子１１２は、整合回路１２１を介して、受信フィルタ１３１と送信フィルタ１４１とに接続されている。また、複数の選択端子１１２～１１４のうち選択端子１１３は、整合回路１２２を介して、受信フィルタ１３２と送信フィルタ１４２とに接続されている。複数の選択端子１１２～１１４のうち選択端子１１４は、整合回路１２３を介して、受信フィルタ１３３と送信フィルタ１４３とに接続されている。 (2.4) First Switch The first switch 11 shown in FIG. 3 switches the reception filter connected to the antenna terminal 101 among the plurality of reception filters 131-133. Also, the first switch 11 switches the transmission filter connected to the antenna terminal 101 among the plurality of transmission filters 141 to 143 . That is, the first switch 11 is a switch for switching the route to be connected to the antenna 91 . The first switch 11 has a common terminal 111 and a plurality of (three in the illustrated example) selection terminals 112 to 114 . Common terminal 111 is connected to antenna terminal 101 . The selection terminal 112 among the plurality of selection terminals 112 to 114 is connected to the reception filter 131 and the transmission filter 141 via the matching circuit 121 . Among the plurality of selection terminals 112 to 114 , selection terminal 113 is connected to reception filter 132 and transmission filter 142 via matching circuit 122 . Selection terminal 114 among the plurality of selection terminals 112 to 114 is connected to reception filter 133 and transmission filter 143 via matching circuit 123 .
　第１スイッチ１１は、共通端子１１１と複数の選択端子１１２～１１４との接続状態を切り替える。第１スイッチ１１は、例えば、信号処理回路９３によって制御される。第１スイッチ１１は、信号処理回路９３のＲＦ信号処理回路９３１からの制御信号に従って、共通端子１１１と複数の選択端子１１２～１１４の少なくとも１つとを電気的に接続させる。 The first switch 11 switches the connection state between the common terminal 111 and the plurality of selection terminals 112-114. The first switch 11 is controlled by the signal processing circuit 93, for example. The first switch 11 electrically connects the common terminal 111 and at least one of the plurality of selection terminals 112 to 114 according to the control signal from the RF signal processing circuit 931 of the signal processing circuit 93 .
　（２．５）第２スイッチ
　図３に示す第２スイッチ１５は、複数の受信フィルタ１３１～１３３の中からローノイズアンプ１６１に接続される受信フィルタを切り替える。つまり、第３スイッチは、ローノイズアンプ１６１に接続させる経路を切り替えるためのスイッチである。第２スイッチ１５は、共通端子１５４と、複数（図示例では３つ）の選択端子１５１～１５３と、を有する。共通端子１５４は、インダクタ１６２を介してローノイズアンプ１６１に接続されている。複数の選択端子１５１～１５３のうち選択端子１５１は、受信フィルタ１３１に接続されている。また、複数の選択端子１５１～１５３のうち選択端子１５２は、受信フィルタ１３２に接続されている。また、複数の選択端子１５１～１５３のうち選択端子１５３は、受信フィルタ１３３に接続されている。 (2.5) Second Switch The second switch 15 shown in FIG. 3 switches the reception filter connected to the low noise amplifier 161 among the plurality of reception filters 131 to 133 . That is, the third switch is a switch for switching the path to be connected to the low noise amplifier 161 . The second switch 15 has a common terminal 154 and a plurality of (three in the illustrated example) selection terminals 151 to 153 . Common terminal 154 is connected to low noise amplifier 161 via inductor 162 . The selection terminal 151 among the plurality of selection terminals 151 to 153 is connected to the reception filter 131 . A selection terminal 152 among the plurality of selection terminals 151 to 153 is connected to the reception filter 132 . A selection terminal 153 among the plurality of selection terminals 151 to 153 is connected to the reception filter 133 .
　第２スイッチ１５は、共通端子１５４と複数の選択端子１５１～１５３との接続状態を切り替える。第２スイッチ１５は、例えば、信号処理回路９３によって制御される。第２スイッチ１５は、信号処理回路９３のＲＦ信号処理回路９３１からの制御信号に従って、共通端子１５４と複数の選択端子１５１～１５３の少なくとも１つとを電気的に接続させる。 The second switch 15 switches the connection state between the common terminal 154 and the plurality of selection terminals 151-153. The second switch 15 is controlled by the signal processing circuit 93, for example. The second switch 15 electrically connects the common terminal 154 and at least one of the plurality of selection terminals 151 to 153 according to the control signal from the RF signal processing circuit 931 of the signal processing circuit 93 .
　（２．６）外部接続端子
　複数の外部接続端子１０は、図２に示すように、外部回路（例えば、信号処理回路９３）と電気的に接続させるための端子である。複数の外部接続端子１０は、アンテナ端子１０１（図３参照）と、信号出力端子１０２（図３参照）と、複数のグランド端子（図示せず）と、を含む。 (2.6) External Connection Terminals As shown in FIG. 2, the plurality of external connection terminals 10 are terminals for electrical connection with an external circuit (for example, the signal processing circuit 93). The multiple external connection terminals 10 include an antenna terminal 101 (see FIG. 3), a signal output terminal 102 (see FIG. 3), and multiple ground terminals (not shown).
　アンテナ端子１０１は、アンテナ整合回路９２を介して、アンテナ９１に接続される。高周波モジュール１内において、アンテナ端子１０１は、第１スイッチ１１に接続されている。また、アンテナ端子１０１は、第１スイッチ１１と複数の整合回路１２１～１２３とを介して、複数の受信フィルタ１３１～１３３及び複数の送信フィルタ１４１～１４３に接続されている。 Antenna terminal 101 is connected to antenna 91 via antenna matching circuit 92 . Inside the high frequency module 1 , the antenna terminal 101 is connected to the first switch 11 . Also, the antenna terminal 101 is connected to a plurality of reception filters 131-133 and a plurality of transmission filters 141-143 via the first switch 11 and a plurality of matching circuits 121-123.
　信号出力端子１０２は、ローノイズアンプ１６１からの受信信号を外部回路（例えば、信号処理回路９３）へ出力するための端子である。信号出力端子１０２は、外部回路（例えば、信号処理回路９３）に接続される。高周波モジュール１内において、信号出力端子１０２は、ローノイズアンプ１６１に接続されている。 The signal output terminal 102 is a terminal for outputting the received signal from the low noise amplifier 161 to an external circuit (for example, the signal processing circuit 93). The signal output terminal 102 is connected to an external circuit (for example, the signal processing circuit 93). In the high frequency module 1 , the signal output terminal 102 is connected to the low noise amplifier 161 .
　複数のグランド端子は、通信装置９０が備える外部基板（図示せず）のグランド電極と電気的に接続されてグランド電位が与えられる端子である。 The plurality of ground terminals are terminals that are electrically connected to a ground electrode of an external substrate (not shown) included in the communication device 90 and are supplied with a ground potential.
　（３）高周波モジュールの構造
　以下、実施形態１に係る高周波モジュール１の構造について、図面を参照して説明する。 (3) Structure of High-Frequency Module Hereinafter, the structure of the high-frequency module 1 according to Embodiment 1 will be described with reference to the drawings.
　高周波モジュール１は、図１～３に示すように、第１実装基板２と、第２実装基板３と、複数（図示例では９個）の電子部品と、を備える。９個の電子部品は、第１電子部品４と、整合回路１２１～１２３（第２電子部品５）と、受信フィルタ１３１～１３３（第３電子部品６）と、インダクタ１６２（第４電子部品７）とを含む。第１電子部品４は、第１スイッチ１１と、第２スイッチ１５と、ローノイズアンプ１６１と、を含むＩＣチップ（ＩＣ部品）である。また、高周波モジュール１は、図２に示すように、複数の外部接続端子１０と、複数の内部接続端子２０と、第１樹脂層８１と、第２樹脂層８２と、金属電極層９と、を備える。 The high-frequency module 1, as shown in FIGS. 1 to 3, includes a first mounting board 2, a second mounting board 3, and a plurality of (nine in the illustrated example) electronic components. The nine electronic components are a first electronic component 4, matching circuits 121 to 123 (second electronic component 5), reception filters 131 to 133 (third electronic component 6), and an inductor 162 (fourth electronic component 7 ) and The first electronic component 4 is an IC chip (IC component) including the first switch 11 , the second switch 15 and the low noise amplifier 161 . 2, the high-frequency module 1 includes a plurality of external connection terminals 10, a plurality of internal connection terminals 20, a first resin layer 81, a second resin layer 82, a metal electrode layer 9, Prepare.
　（３．１）第１実装基板
　第１実装基板２は、図２に示すように、第１主面２１及び第２主面２２を有する。第１主面２１及び第２主面２２は、第１方向Ｄ１において互いに対向する。第２主面２２は、高周波モジュール１が外部基板（図示せず）に設けられたときに、外部基板における第１実装基板２側の主面と対向する。第１実装基板２は、第１主面２１に第１電子部品４が実装され、第２主面２２に第４電子部品７が実装されている両面実装基板である。第１実装基板２は、第１方向Ｄ１において所定の厚さＷ１を有する。 (3.1) First Mounting Board The first mounting board 2 has a first main surface 21 and a second main surface 22, as shown in FIG. The first main surface 21 and the second main surface 22 face each other in the first direction D1. The second main surface 22 faces the main surface of the external substrate on the side of the first mounting substrate 2 when the high-frequency module 1 is provided on the external substrate (not shown). The first mounting board 2 is a double-sided mounting board in which the first electronic component 4 is mounted on the first principal surface 21 and the fourth electronic component 7 is mounted on the second principal surface 22 . The first mounting board 2 has a predetermined thickness W1 in the first direction D1.
　第１実装基板２は、複数の誘電体層が積層された多層基板である。第１実装基板２は、複数の導電層と、複数のビア導体（貫通電極を含む）と、を有する。複数の導電層は、グランド層を含む。複数のビア導体は、第１主面２１及び第２主面２２のそれぞれに実装されている素子（上述の第１電子部品４、第４電子部品７）と第１実装基板２の導電層との電気的接続に用いられる。また、複数のビア導体は、第１主面２１に実装されている素子と第２主面２２に実装されている素子との電気的接続、及び、第１実装基板２の導電層と外部接続端子１０及び内部接続端子２０との電気的接続に用いられる。 The first mounting board 2 is a multi-layer board in which a plurality of dielectric layers are laminated. The first mounting board 2 has a plurality of conductive layers and a plurality of via conductors (including through electrodes). The plurality of conductive layers includes a ground layer. The plurality of via conductors are provided between the elements (the first electronic component 4 and the fourth electronic component 7 described above) mounted on each of the first main surface 21 and the second main surface 22 and the conductive layer of the first mounting board 2 . used for electrical connection. In addition, the plurality of via conductors provide electrical connection between the elements mounted on the first main surface 21 and the elements mounted on the second main surface 22, and external connection with the conductive layer of the first mounting substrate 2. It is used for electrical connection with the terminal 10 and the internal connection terminal 20 .
　第１実装基板２の第１主面２１には、第１電子部品４が配置されている。第１実装基板２の第２主面２２には、第４電子部品７、複数の外部接続端子１０、及び複数の内部接続端子２０が配置されている。 A first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2 . A fourth electronic component 7 , a plurality of external connection terminals 10 , and a plurality of internal connection terminals 20 are arranged on the second main surface 22 of the first mounting board 2 .
　（３．２）第１電子部品
　第１電子部品４は、図２に示すように、第１実装基板２の第１主面２１に配置されている。上述したように、第１電子部品４は、第１方向Ｄ１から平面視したときの面積が、高周波モジュール１に含まれる電子部品のうち最も大きい電子部品である。第１電子部品４は、第１スイッチ１１（図３参照）と、第２スイッチ１５と、ローノイズアンプ１６１と、を含むＩＣチップである。第１電子部品４は、Ｓｉ系ＩＣチップである。第１方向Ｄ１からの平面視で、第１電子部品４の外縁は、四角形状である。 (3.2) First Electronic Component The first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2, as shown in FIG. As described above, the first electronic component 4 is an electronic component having the largest area among the electronic components included in the high-frequency module 1 when viewed in plan from the first direction D1. The first electronic component 4 is an IC chip including a first switch 11 (see FIG. 3), a second switch 15, and a low noise amplifier 161. FIG. The first electronic component 4 is a Si-based IC chip. The outer edge of the first electronic component 4 is rectangular in plan view from the first direction D1.
　第１電子部品４は、例えば、第１実装基板２の第１主面２１にフリップチップ実装されている。高周波モジュール１では、第１電子部品４が複数の導電性バンプにより第１実装基板２に接続されている。導電性バンプの材料は、例えば、はんだ、金、又は、銅である。導電性バンプは、第１電子部品４の構成要素ではないが、第１電子部品４の構成要素であってもよい。 The first electronic component 4 is flip-chip mounted on the first main surface 21 of the first mounting substrate 2, for example. In the high frequency module 1, the first electronic component 4 is connected to the first mounting board 2 by a plurality of conductive bumps. The material of the conductive bumps is eg solder, gold or copper. The conductive bumps are not a component of the first electronic component 4 but may be a component of the first electronic component 4 .
　（３．３）第４電子部品
　第４電子部品７は、図１及び２に示すように、第１実装基板２の第２主面２２に配置されている。第４電子部品７は、第１方向Ｄ１から平面視したときに、第２実装基板３と重複しない位置に実装されている。なお、第４電子部品７の高さは、第２電子部品５の高さより大きくてもよい。ここで、第４電子部品７の高さとは、第１方向Ｄ１における、第１実装基板２の第２主面２２と、第４電子部品７の第１実装基板２側とは反対側の主面との距離を指す。同様に、第２電子部品５の高さとは、第１方向Ｄ１における、第２実装基板３の第３主面３１と、第２電子部品５の第２実装基板３側とは反対側の主面との距離を指す。例えば、第１実装基板２の第２主面２２と、第２電子部品５の第１実装基板２側とは反対側の主面との距離は、第１実装基板２の第２主面２２と第２実装基板３の第４主面３２との距離よりも大きい。このような構成により、第１方向Ｄ１から平面視したときに第４電子部品７と第２実装基板３とが重複する位置に配置した場合と比較して、高周波モジュール１の第１方向Ｄ１における厚さを小さくすることができる。また、このような構成により、第４電子部品７を第２実装基板３に配置した場合と比較しても、高周波モジュール１の第１方向Ｄ１における厚さを小さくすることができる。第４電子部品７は、例えば、ローノイズアンプ１６１の入力端子に接続されるインダクタ１６２である。 (3.3) Fourth Electronic Component The fourth electronic component 7 is arranged on the second main surface 22 of the first mounting board 2, as shown in FIGS. The fourth electronic component 7 is mounted at a position that does not overlap with the second mounting substrate 3 when viewed in plan from the first direction D1. Note that the height of the fourth electronic component 7 may be greater than the height of the second electronic component 5 . Here, the height of the fourth electronic component 7 refers to the height of the second main surface 22 of the first mounting board 2 and the height of the fourth electronic component 7 opposite to the first mounting board 2 side in the first direction D1. Refers to the distance to the surface. Similarly, the height of the second electronic component 5 means the height of the third main surface 31 of the second mounting board 3 and the height of the second electronic component 5 on the side opposite to the second mounting board 3 side in the first direction D1. Refers to the distance to the surface. For example, the distance between the second main surface 22 of the first mounting board 2 and the main surface of the second electronic component 5 opposite to the first mounting board 2 side is the second main surface 22 of the first mounting board 2 and the fourth main surface 32 of the second mounting board 3 . With such a configuration, compared to the case where the fourth electronic component 7 and the second mounting board 3 are arranged at overlapping positions when viewed in plan from the first direction D1, the Thickness can be reduced. Moreover, with such a configuration, the thickness of the high-frequency module 1 in the first direction D1 can be reduced even when compared with the case where the fourth electronic component 7 is arranged on the second mounting board 3 . The fourth electronic component 7 is, for example, an inductor 162 connected to the input terminal of the low noise amplifier 161 .
　（３．４）第２実装基板
　第２実装基板３は、図１及び２に示すように、第３主面３１及び第４主面３２を有する。第３主面３１及び第４主面３２は、第１方向Ｄ１において互いに対向する。また、第３主面３１は、第１実装基板２の第２主面２２と互いに対向する。すなわち、第２実装基板３は、第２主面２２上に位置している。第２実装基板３は、第３主面３１に第２電子部品５と内部接続端子２０とが実装され、第４主面３２に第３電子部品６が実装される。すなわち、第２実装基板３は、両面に電子部品が実装される。第２実装基板３は第１方向Ｄ１において、所定の厚さＷ２を有する。後述するように、第２実装基板３の厚さＷ２は、第１実装基板２の厚さＷ１より薄い。 (3.4) Second Mounting Board The second mounting board 3 has a third main surface 31 and a fourth main surface 32, as shown in FIGS. The third main surface 31 and the fourth main surface 32 face each other in the first direction D1. Also, the third main surface 31 faces the second main surface 22 of the first mounting board 2 . That is, the second mounting board 3 is positioned on the second main surface 22 . The second mounting board 3 has the second electronic component 5 and the internal connection terminals 20 mounted on the third main surface 31 and the third electronic component 6 mounted on the fourth main surface 32 . That is, electronic components are mounted on both sides of the second mounting board 3 . The second mounting board 3 has a predetermined thickness W2 in the first direction D1. As will be described later, the thickness W2 of the second mounting board 3 is thinner than the thickness W1 of the first mounting board 2 .
　第２実装基板３は、例えば、１つの誘電体層と２つの導電層とを有する両面実装基板である。誘電体層の２つの主面のそれぞれに導電層が設けられている。第２実装基板３は、複数のビア導体を有する。複数のビア導体は、第２実装基板３の第３主面３１及び第４主面３２に実装されている素子（第２電子部品５、第３電子部品６、及び内部接続端子２０）同士の電気的接続に用いられる。 The second mounting board 3 is, for example, a double-sided mounting board having one dielectric layer and two conductive layers. A conductive layer is provided on each of the two main surfaces of the dielectric layer. The second mounting board 3 has a plurality of via conductors. A plurality of via conductors are provided between elements (the second electronic component 5, the third electronic component 6, and the internal connection terminals 20) mounted on the third main surface 31 and the fourth main surface 32 of the second mounting board 3. Used for electrical connections.
　（３．５）第２電子部品
　第２電子部品５は、図１及び２に示すように、第２実装基板３の第３主面３１に配置されている。第２電子部品５は、例えば、整合回路１２１～１２３のそれぞれを構成する電子部品であり、例えば、１以上のインダクタ、又は、１以上のキャパシタを含む。なお、第２電子部品５は、１以上のインダクタと１以上のキャパシタとを含んでもよい。 (3.5) Second Electronic Component The second electronic component 5 is arranged on the third main surface 31 of the second mounting board 3, as shown in FIGS. The second electronic component 5 is, for example, an electronic component forming each of the matching circuits 121 to 123, and includes, for example, one or more inductors or one or more capacitors. Second electronic component 5 may include one or more inductors and one or more capacitors.
　（３．６）第３電子部品
　第３電子部品６は、図１及び２に示すように、第２実装基板３の第４主面３２に配置されている。第３電子部品６は、例えば、受信フィルタ１３１～１３３である。受信フィルタ１３１～１３３のそれぞれは、例えば、複数の直列腕共振子及び複数の並列腕共振子を含む弾性波フィルタである。弾性波フィルタは、例えば、弾性表面波を利用するＳＡＷ(Surface Acoustic Wave)フィルタである。第３電子部品６は、第２実装基板３側とは反対側に第５主面６１を有する。第３電子部品６の第５主面６１は、高周波モジュール１の第１方向Ｄ１における外部基板側の端面と同一平面上に存在する。 (3.6) Third Electronic Component The third electronic component 6 is arranged on the fourth main surface 32 of the second mounting board 3, as shown in FIGS. The third electronic component 6 is, for example, reception filters 131-133. Each of the reception filters 131 to 133 is, for example, an elastic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators. The acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that utilizes surface acoustic waves. The third electronic component 6 has a fifth main surface 61 on the side opposite to the second mounting board 3 side. The fifth main surface 61 of the third electronic component 6 is on the same plane as the end surface of the high-frequency module 1 on the side of the external substrate in the first direction D1.
　（３．７）外部接続端子
　複数の外部接続端子１０は、第１実装基板２と外部基板とを電気的に接続するための端子である。 (3.7) External Connection Terminals The plurality of external connection terminals 10 are terminals for electrically connecting the first mounting board 2 and an external board.
　複数の外部接続端子１０は、図１及び２に示すように、第１実装基板２の第２主面２２に配置されている。「外部接続端子１０が第１実装基板２の第２主面２２に配置されている」とは、外部接続端子１０が第１実装基板２の第２主面２２に機械的に接続されていることと、外部接続端子１０が第１実装基板２（の適宜の導体部）と電気的に接続されていることと、を含む。複数の外部接続端子１０の材料は、例えば、金属（例えば、銅、銅合金等）である。複数の外部接続端子１０の各々は、柱状電極である。柱状電極は、例えば、第１実装基板２の導体部に対して、例えば、はんだにより接合されているが、これに限らず、例えば、導電性接着剤（例えば、導電性ペースト）を用いて接合されていてもよいし、直接接合されていてもよい。第１方向Ｄ１からの平面視で、複数の外部接続端子１０の各々は、円形状である。 The plurality of external connection terminals 10 are arranged on the second main surface 22 of the first mounting board 2, as shown in FIGS. "The external connection terminals 10 are arranged on the second main surface 22 of the first mounting board 2" means that the external connection terminals 10 are mechanically connected to the second main surface 22 of the first mounting board 2. and that the external connection terminal 10 is electrically connected to (a suitable conductor portion of) the first mounting board 2 . The material of the plurality of external connection terminals 10 is, for example, metal (eg, copper, copper alloy, etc.). Each of the plurality of external connection terminals 10 is a columnar electrode. The columnar electrodes are, for example, joined to the conductor portion of the first mounting substrate 2 by soldering, for example, but not limited to this, for example, joining using a conductive adhesive (for example, conductive paste). It may be connected directly. Each of the plurality of external connection terminals 10 has a circular shape in plan view from the first direction D1.
　なお、第１方向Ｄ１からの平面視で、外部接続端子１０は、第２実装基板３及び第２電子部品５と重ならない。また、第１方向Ｄ１からの平面視で、外部接続端子１０は、第２電子部品５よりも第１実装基板２の外周面２３に近い位置に存在してもよい。第２電子部品５よりも第１実装基板２の外周面２３に近い位置に少なくとも１つの外部接続端子１０が存在することで、その外部接続端子１０が第２電子部品５の電磁シールドとして機能する。この場合、遮蔽の対象となる電磁波の波長λに対し、第１方向Ｄ１における外部接続端子１０の長さは、λ／４以下であることが好ましい。 Note that the external connection terminals 10 do not overlap the second mounting substrate 3 and the second electronic component 5 in plan view from the first direction D1. In addition, the external connection terminals 10 may be located closer to the outer peripheral surface 23 of the first mounting board 2 than the second electronic component 5 when viewed in plan from the first direction D<b>1 . Since at least one external connection terminal 10 exists at a position closer to the outer peripheral surface 23 of the first mounting board 2 than the second electronic component 5, the external connection terminal 10 functions as an electromagnetic shield for the second electronic component 5. . In this case, the length of the external connection terminal 10 in the first direction D1 is preferably λ/4 or less with respect to the wavelength λ of the electromagnetic wave to be shielded.
　複数の外部接続端子１０は、アンテナ端子１０１と、信号出力端子１０２と、複数の外部グランド端子と、を含んでいる。 The multiple external connection terminals 10 include an antenna terminal 101, a signal output terminal 102, and multiple external ground terminals.
　（３．８）内部接続端子
　複数の内部接続端子２０は、第１実装基板２と第２実装基板３とを電気的に接続するための端子である。 (3.8) Internal Connection Terminals The plurality of internal connection terminals 20 are terminals for electrically connecting the first mounting board 2 and the second mounting board 3 .
　複数の内部接続端子２０は、図１及び２に示すように、第１実装基板２側の端部が第１実装基板２の第２主面２２に配置されている。また、複数の内部接続端子２０は、図１及び２に示すように、第２実装基板３側の端部が第２実装基板３の第３主面３１に配置されている。複数の内部接続端子２０の材料は、例えば、金属（例えば、銅、銅合金等）である。複数の内部接続端子２０の各々は、柱状電極である。柱状電極は、例えば、第１実装基板２の導体部に対して、例えば、はんだにより接合されているが、これに限らず、例えば、導電性接着剤（例えば、導電性ペースト）を用いて接合されていてもよいし、直接接合されていてもよい。第１方向Ｄ１からの平面視で、複数の内部接続端子２０の各々は、円形状である。 As shown in FIGS. 1 and 2, the plurality of internal connection terminals 20 are arranged on the second main surface 22 of the first mounting board 2 at their ends on the side of the first mounting board 2 . 1 and 2, the plurality of internal connection terminals 20 are arranged on the third main surface 31 of the second mounting board 3 at their ends on the second mounting board 3 side. The material of the plurality of internal connection terminals 20 is, for example, metal (eg, copper, copper alloy, etc.). Each of the plurality of internal connection terminals 20 is a columnar electrode. The columnar electrodes are, for example, joined to the conductor portion of the first mounting substrate 2 by soldering, for example, but not limited to this, for example, joining using a conductive adhesive (for example, conductive paste). It may be connected directly. Each of the plurality of internal connection terminals 20 has a circular shape in plan view from the first direction D1.
　なお、第１方向Ｄ１からの平面視で、内部接続端子２０は、第３電子部品６と重ならない。また、第１方向Ｄ１からの平面視で、内部接続端子２０は、第３電子部品６よりも第２実装基板３の外周面に近い位置に存在してもよい。第３電子部品６よりも第２実装基板３の外周面に近い位置に少なくとも１つの内部接続端子２０が存在することで、その内部接続端子２０が第３電子部品６の電磁シールドとして機能する。この場合、遮蔽の対象となる電磁波の波長λに対し、第１方向Ｄ１における内部接続端子２０の長さは、λ／４以下であることが好ましい。また、第１方向Ｄ１からの平面視で、内部接続端子２０は、第３電子部品６と第２電子部品５との間に存在してもよい。 Note that the internal connection terminals 20 do not overlap the third electronic component 6 in plan view from the first direction D1. Further, the internal connection terminals 20 may be located closer to the outer peripheral surface of the second mounting board 3 than the third electronic component 6 when viewed from the first direction D<b>1 . Since at least one internal connection terminal 20 exists at a position closer to the outer peripheral surface of the second mounting board 3 than the third electronic component 6 , the internal connection terminal 20 functions as an electromagnetic shield for the third electronic component 6 . In this case, the length of the internal connection terminal 20 in the first direction D1 is preferably λ/4 or less with respect to the wavelength λ of the electromagnetic wave to be shielded. Further, the internal connection terminal 20 may exist between the third electronic component 6 and the second electronic component 5 in plan view from the first direction D1.
　（３．９）第１樹脂層
　第１樹脂層８１は、図２に示すように、第１実装基板２の第１主面２１に配置されている。第１樹脂層８１は、第１電子部品４を覆っている。ここで、第１樹脂層８１は、第１電子部品４の第１実装基板２側とは反対側の主面４１と、第１電子部品４の外周面４２とを覆っている。第１樹脂層８１は、樹脂（例えば、エポキシ樹脂）を含む。第１樹脂層８１は、樹脂のほかにフィラーを含んでいてもよい。 (3.9) First Resin Layer The first resin layer 81 is arranged on the first major surface 21 of the first mounting board 2 as shown in FIG. The first resin layer 81 covers the first electronic component 4 . Here, the first resin layer 81 covers the main surface 41 of the first electronic component 4 opposite to the first mounting substrate 2 side and the outer peripheral surface 42 of the first electronic component 4 . The first resin layer 81 contains resin (for example, epoxy resin). The first resin layer 81 may contain filler in addition to resin.
　（３．１０）第２樹脂層
　第２樹脂層８２は、図２に示すように、第１実装基板２の第２主面２２に配置されている。第２樹脂層８２は、第１実装基板２の第２主面２２に実装されている第４電子部品７の外周面を覆っている。また、第２樹脂層８２は、第２実装基板３の第３主面３１に実装されている第２電子部品５の第１実装基板２側の主面と、第２電子部品５の外周面と、を覆っている。さらに、第２樹脂層８２は、第２実装基板３の第４主面３２に実装されている第３電子部品６の外周面を覆っている。また、第２樹脂層８２は、複数の内部接続端子２０の外周面と、複数の外部接続端子１０の外周面、とを覆っている。なお、第２樹脂層８２は、第３電子部品６の第２実装基板３側とは反対側の第５主面６１を覆っていない。また、第２樹脂層８２の第１実装基板２側とは反対側の主面８２１と、第３電子部品６の第５主面６１とは、同一平面上に存在してもよい。また、第２樹脂層８２は、第４電子部品７の第１実装基板２側とは反対側の主面を覆っていなくてもよい。第２樹脂層８２は、樹脂（例えば、エポキシ樹脂）を含む。第２樹脂層８２は、樹脂のほかにフィラーを含んでいてもよい。第２樹脂層８２の材料は、第１樹脂層８１の材料と同じ材料であってもよいし、異なる材料であってもよい。 (3.10) Second Resin Layer The second resin layer 82 is arranged on the second main surface 22 of the first mounting board 2 as shown in FIG. The second resin layer 82 covers the outer peripheral surface of the fourth electronic component 7 mounted on the second main surface 22 of the first mounting board 2 . The second resin layer 82 is formed on the main surface of the second electronic component 5 mounted on the third main surface 31 of the second mounting substrate 3 on the side of the first mounting substrate 2 and the outer peripheral surface of the second electronic component 5 . and covers. Furthermore, the second resin layer 82 covers the outer peripheral surface of the third electronic component 6 mounted on the fourth main surface 32 of the second mounting board 3 . The second resin layer 82 also covers the outer peripheral surfaces of the plurality of internal connection terminals 20 and the outer peripheral surfaces of the plurality of external connection terminals 10 . The second resin layer 82 does not cover the fifth main surface 61 of the third electronic component 6 opposite to the second mounting board 3 side. Further, the main surface 821 of the second resin layer 82 opposite to the first mounting substrate 2 side and the fifth main surface 61 of the third electronic component 6 may be on the same plane. In addition, the second resin layer 82 does not have to cover the main surface of the fourth electronic component 7 opposite to the first mounting substrate 2 side. The second resin layer 82 contains resin (for example, epoxy resin). The second resin layer 82 may contain filler in addition to resin. The material of the second resin layer 82 may be the same material as the material of the first resin layer 81, or may be a different material.
　（３．１１）金属電極層
　図２に示すように、金属電極層９は、第１樹脂層８１及び第２樹脂層８２を覆っている。高周波モジュール１では、金属電極層９は、高周波モジュール１の内外の電磁シールドを目的として設けられているシールド層である。金属電極層９は、複数の金属層を積層した多層構造を有しているが、多層構造に限らず、１つの金属層であってもよい。１つの金属層は、１又は複数種の金属を含む。金属電極層９は、第１樹脂層８１における第１実装基板２側とは反対側の主面８１１と、第１樹脂層８１の外周面８１２と、第１実装基板２の外周面２３と、第２樹脂層８２の外周面８２２の一部とを覆っている。また、金属電極層９は、第１電子部品４における第１実装基板２側とは反対側の主面４１を覆っている。なお、本実施形態では、第３電子部品６における第５主面６１は、金属電極層９に接していない。言い換えると、第３電子部品６における第５主面６１は、第１方向Ｄ１において金属電極層９から離れている。金属電極層９は、図２に示すように、第１実装基板２のグランド層の外周面の少なくとも一部と接触している。これにより、金属電極層９の電位をグランド層の電位と同じにすることができる。 (3.11) Metal Electrode Layer As shown in FIG. 2 , the metal electrode layer 9 covers the first resin layer 81 and the second resin layer 82 . In the high frequency module 1 , the metal electrode layer 9 is a shield layer provided for the purpose of electromagnetic shielding inside and outside the high frequency module 1 . Although the metal electrode layer 9 has a multi-layered structure in which a plurality of metal layers are laminated, it is not limited to a multi-layered structure and may be one metal layer. One metal layer contains one or more kinds of metals. The metal electrode layer 9 includes a main surface 811 of the first resin layer 81 opposite to the first mounting substrate 2 side, an outer peripheral surface 812 of the first resin layer 81, an outer peripheral surface 23 of the first mounting substrate 2, It covers part of the outer peripheral surface 822 of the second resin layer 82 . Moreover, the metal electrode layer 9 covers the main surface 41 of the first electronic component 4 on the side opposite to the first mounting substrate 2 side. In addition, in the present embodiment, the fifth main surface 61 of the third electronic component 6 is not in contact with the metal electrode layer 9 . In other words, the fifth main surface 61 of the third electronic component 6 is separated from the metal electrode layer 9 in the first direction D1. The metal electrode layer 9 is in contact with at least part of the outer peripheral surface of the ground layer of the first mounting substrate 2, as shown in FIG. Thereby, the potential of the metal electrode layer 9 can be made the same as the potential of the ground layer.
　（４）高周波モジュールの各構成要素の詳細構造
　（４．１）第１実装基板
　図１及び２に示す第１実装基板２は、例えば、複数の誘電体層及び複数の導電層を含む多層基板である。複数の誘電体層及び複数の導電層は、第１方向Ｄ１において積層されている。複数の導電層は、層ごとに定められた所定パターンに形成されている。複数の導電層の各々は、第１方向Ｄ１に直交する一平面内において１つ又は複数の導体部を含む。各導電層の材料は、例えば、銅である。複数の導電層は、グランド層を含む。高周波モジュール１では、複数のグランド端子とグランド層とが、第１実装基板２のビア導体等を介して電気的に接続されている。第１実装基板２は、例えば、ＬＴＣＣ（Low Temperature Co-fired Ceramics）基板である。第１実装基板２は、ＬＴＣＣ基板に限らず、例えば、プリント配線板、ＨＴＣＣ（High Temperature Co-fired Ceramics）基板、樹脂多層基板であってもよい。 (4) Detailed structure of each component of the high frequency module (4.1) First mounting board The first mounting board 2 shown in FIGS. 1 and 2 is, for example, a multilayer board including a plurality of dielectric layers and a plurality of conductive layers. is. The plurality of dielectric layers and the plurality of conductive layers are laminated in the first direction D1. A plurality of conductive layers are formed in a predetermined pattern defined for each layer. Each of the multiple conductive layers includes one or multiple conductor portions within one plane orthogonal to the first direction D1. The material of each conductive layer is copper, for example. The plurality of conductive layers includes a ground layer. In the high-frequency module 1 , a plurality of ground terminals and a ground layer are electrically connected through via conductors and the like of the first mounting board 2 . The first mounting board 2 is, for example, an LTCC (Low Temperature Co-fired Ceramics) board. The first mounting board 2 is not limited to the LTCC board, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) board, or a resin multilayer board.
　また、第１実装基板２は、ＬＴＣＣ基板に限らず、例えば、配線構造体であってもよい。配線構造体は、例えば、多層構造体である。多層構造体は、少なくとも１つの絶縁層と、少なくとも１つの導電層とを含む。絶縁層は、所定パターンに形成されている。絶縁層が複数の場合は、複数の絶縁層は、層ごとに定められた所定パターンに形成されている。導電層は、絶縁層の所定パターンとは異なる所定パターンに形成されている。導電層が複数の場合は、複数の導電層は、層ごとに定められた所定パターンに形成されている。導電層は、１つ又は複数の再配線部を含んでもよい。配線構造体では、多層構造体の厚さ方向において互いに対向する２つの面のうち第１面が第１実装基板２の第１主面２１であり、第２面が第１実装基板２の第２主面２２である。配線構造体は、例えば、インタポーザであってもよい。インタポーザは、シリコン基板を用いたインタポーザであってもよいし、多層で構成された基板であってもよい。 Also, the first mounting board 2 is not limited to the LTCC board, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may include one or more redistribution portions. In the wiring structure, the first surface of the two surfaces facing each other in the thickness direction of the multilayer structure is the first principal surface 21 of the first mounting substrate 2 , and the second surface is the first main surface 21 of the first mounting substrate 2 . There are two main surfaces 22 . The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate, or may be a multi-layered substrate.
　第１実装基板２の第１主面２１及び第２主面２２は、第１方向Ｄ１において離れており、第１方向Ｄ１に交差する。第１実装基板２における第１主面２１は、例えば、第１方向Ｄ１に直交しているが、例えば、第１方向Ｄ１に直交しない面として導体部の側面等を含んでいてもよい。また、第１実装基板２における第２主面２２は、例えば、第１方向Ｄ１に直交しているが、例えば、第１方向Ｄ１に直交しない面として、導体部の側面等を含んでいてもよい。また、第１実装基板２の第１主面２１及び第２主面２２は、微細な凹凸又は凹部又は凸部が形成されていてもよい。 The first main surface 21 and the second main surface 22 of the first mounting board 2 are separated in the first direction D1 and intersect the first direction D1. The first main surface 21 of the first mounting board 2 is, for example, orthogonal to the first direction D1, but may include, for example, side surfaces of conductors as surfaces that are not orthogonal to the first direction D1. Further, the second main surface 22 of the first mounting substrate 2 is, for example, orthogonal to the first direction D1. good. Further, the first main surface 21 and the second main surface 22 of the first mounting substrate 2 may have fine unevenness, concave portions, or convex portions.
　（４．２）第２実装基板
　図１及び２に示す第２実装基板３は、例えば、１つの誘電体層及び２つの導電層を含む基板である。１つの誘電体層及び２つの導電層は、第２実装基板３の厚さ方向において積層されている。第２実装基板３における誘電体層及び導電層の積層数は、第１実装基板２における複数の誘電体層及び複数の導電層の積層数よりも少ない。したがって、第２実装基板３の厚さＷ２は、第１実装基板２の厚さＷ１よりも薄い。言い換えると、第１実装基板２の厚さＷ１は、第２実装基板３の厚さＷ２よりも厚い。２つの導電層は、層ごとに定められた所定パターンに形成されている。２つの導電層の各々は、第２実装基板３の厚さ方向に直交する一平面内において１つ又は複数の導体部を含む。各導電層の材料は、例えば、銅である。第２実装基板３は、例えば、ＬＴＣＣ（Low Temperature Co-fired Ceramics）基板である。第２実装基板３は、ＬＴＣＣ基板に限らず、例えば、プリント配線板、ＨＴＣＣ（High Temperature Co-fired Ceramics）基板、樹脂多層基板であってもよい。 (4.2) Second Mounting Substrate The second mounting substrate 3 shown in FIGS. 1 and 2 is, for example, a substrate including one dielectric layer and two conductive layers. One dielectric layer and two conductive layers are laminated in the thickness direction of the second mounting board 3 . The number of laminated dielectric layers and conductive layers on the second mounting board 3 is smaller than the number of laminated dielectric layers and conductive layers on the first mounting board 2 . Therefore, the thickness W2 of the second mounting board 3 is thinner than the thickness W1 of the first mounting board 2 . In other words, the thickness W1 of the first mounting board 2 is thicker than the thickness W2 of the second mounting board 3 . The two conductive layers are formed in a predetermined pattern defined for each layer. Each of the two conductive layers includes one or more conductors in one plane perpendicular to the thickness direction of the second mounting board 3 . The material of each conductive layer is copper, for example. The second mounting board 3 is, for example, an LTCC (Low Temperature Co-fired Ceramics) board. The second mounting board 3 is not limited to the LTCC board, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) board, or a resin multilayer board.
　また、第２実装基板３は、ＬＴＣＣ基板に限らず、例えば、配線構造体であってもよい。配線構造体は、例えば、多層構造体である。配線構造体では、多層構造体の厚さ方向において互いに対向する２つの面のうち、第１実装基板２の第２主面２２に対向する第１面が第２実装基板３の第３主面３１であり、第２面が第２実装基板３の第４主面３２である。配線構造体は、例えば、インタポーザであってもよい。インタポーザは、シリコン基板を用いたインタポーザであってもよいし、多層で構成された基板であってもよい。 Also, the second mounting board 3 is not limited to the LTCC board, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. In the wiring structure, of the two surfaces facing each other in the thickness direction of the multilayer structure, the first surface facing the second main surface 22 of the first mounting substrate 2 is the third main surface of the second mounting substrate 3. 31 , and the second surface is the fourth main surface 32 of the second mounting board 3 . The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate, or may be a multi-layered substrate.
　（４．３）フィルタ
　複数の受信フィルタ１３１～１３３の詳細な構造について説明する。 (4.3) Filters Detailed structures of the plurality of receive filters 131 to 133 will be described.
　第３電子部品６として構成されるフィルタは、ベアチップの弾性波フィルタである。第３電子部品６は、基板と、回路部と、複数のパッド電極と、圧電体層と、低音速膜と、を有する。基板は、基板の厚さ方向において互いに対向する第６主面及び第７主面を有する。基板の第７主面は、第３電子部品６の第５主面６１を構成する。回路部は、複数のＩＤＴ（Interdigital Transducer）電極を含む。複数のパッド電極は、基板の第６主面上に形成され、回路部に接続されている。複数のパッド電極は、複数のバンプを介して第２実装基板３に接続されている。低音速膜は、基板の第６主面上に設けられている。圧電体層は、低音速膜上に設けられている。複数のＩＤＴ電極は、圧電体層上に設けられている。また、複数のＩＤＴ電極は、複数のパッド電極と複数のバンプと基板と第２実装基板３と第２樹脂層８２とによって、基板と第２実装基板３との間に形成される空間内に配置されている。第３電子部品６は、基板の厚さ方向からの平面視において、長方形状であるが、例えば、正方形状であってもよい。 The filter configured as the third electronic component 6 is a bare-chip elastic wave filter. The third electronic component 6 has a substrate, a circuit section, a plurality of pad electrodes, a piezoelectric layer, and a low sound velocity film. The substrate has a sixth main surface and a seventh main surface facing each other in the thickness direction of the substrate. The seventh main surface of the substrate constitutes the fifth main surface 61 of the third electronic component 6 . The circuit section includes a plurality of IDT (Interdigital Transducer) electrodes. A plurality of pad electrodes are formed on the sixth main surface of the substrate and connected to the circuit section. A plurality of pad electrodes are connected to the second mounting board 3 via a plurality of bumps. The low acoustic velocity film is provided on the sixth main surface of the substrate. The piezoelectric layer is provided on the low sound velocity film. A plurality of IDT electrodes are provided on the piezoelectric layer. Further, the plurality of IDT electrodes are arranged in the space formed between the substrate and the second mounting substrate 3 by the plurality of pad electrodes, the plurality of bumps, the substrate, the second mounting substrate 3 and the second resin layer 82. are placed. The third electronic component 6 has a rectangular shape in plan view from the thickness direction of the substrate, but may have a square shape, for example.
　低音速膜は、基板の厚さ方向からの平面視において、基板の外周から離れて位置している。第３電子部品６は、絶縁層を更に有する。絶縁層は、基板の第６主面のうち低音速膜に覆われていない領域を覆っている。絶縁層は、電気絶縁性を有する。絶縁層は、基板の第６主面上において基板の外周に沿って形成されている。絶縁層は、複数のＩＤＴ電極を囲んでいる。第３電子部品６の厚さ方向からの平面視において、絶縁層は、枠形状（例えば、矩形枠状）である。絶縁層の一部は、第３電子部品６の厚さ方向において圧電体層の外周部に重なっている。圧電体層の外周面及び低音速膜の外周面は、絶縁層により覆われている。絶縁層の材料は、エポキシ樹脂、ポリイミド等である。 The low acoustic velocity film is located away from the outer periphery of the substrate in plan view from the thickness direction of the substrate. The third electronic component 6 further has an insulating layer. The insulating layer covers a region of the sixth main surface of the substrate that is not covered with the low-temperature film. The insulating layer has electrical insulation. The insulating layer is formed along the outer periphery of the substrate on the sixth main surface of the substrate. An insulating layer surrounds the plurality of IDT electrodes. In a plan view from the thickness direction of the third electronic component 6, the insulating layer has a frame shape (for example, a rectangular frame shape). A portion of the insulating layer overlaps the outer peripheral portion of the piezoelectric layer in the thickness direction of the third electronic component 6 . The outer peripheral surface of the piezoelectric layer and the outer peripheral surface of the low sound velocity film are covered with an insulating layer. The material of the insulating layer is epoxy resin, polyimide, or the like.
　複数のパッド電極は、絶縁層を介して基板の第６主面上に設けられている。 A plurality of pad electrodes are provided on the sixth main surface of the substrate via an insulating layer.
　圧電体層の材料は、例えば、リチウムニオベイト又はリチウムタンタレートである。低音速膜の材料は、例えば、酸化ケイ素である。低音速膜では、圧電体層を伝搬するバルク波の音速よりも、低音速膜を伝搬するバルク波の音速が低速である。低音速膜の材料は、酸化ケイ素に限定されず、例えば、酸化ケイ素、ガラス、酸窒化ケイ素、酸化タンタル、酸化ケイ素にフッ素、炭素、若しくはホウ素を加えた化合物、又は、上記各材料を主成分とする材料であってもよい。 The material of the piezoelectric layer is, for example, lithium niobate or lithium tantalate. The material of the low sound velocity film is, for example, silicon oxide. In the low acoustic velocity film, the acoustic velocity of the bulk wave propagating through the low acoustic velocity film is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric layer. The material of the low sound velocity film is not limited to silicon oxide, and includes, for example, silicon oxide, glass, silicon oxynitride, tantalum oxide, a compound obtained by adding fluorine, carbon, or boron to silicon oxide, or any of the above materials as a main component. It may be a material that
　基板は、例えば、シリコン基板である。すなわち、第３電子部品６の基板の材料は、シリコンである。基板では、圧電体層を伝搬する弾性波の音速よりも、基板を伝搬するバルク波の音速が高速である。ここにおいて、基板を伝搬するバルク波は、基板を伝搬する複数のバルク波のうち最も低音速なバルク波である。本実施形態では、基板と、基板上に設けられている低音速膜と、で高音速部材が構成されている。また、本実施形態では、基板が、シリコン基板からなる支持基板である。なお、基板の材料は、シリコンに限らず、例えば、ガリウム砒素、ヒ化アルミニウム、ヒ化インジウム、リン化インジウム、リン化ガリウム、アンチモン化インジウム、窒化ガリウム、窒化インジウム、窒化アルミニウム、シリコン、ゲルマニウム、炭化シリコン及び酸化ガリウム（III）のいずれかを主成分として含む材料、又はこれらの材料のうち２以上の材料からなる多元系混晶材料を主成分として含む材料であってもよい。 The substrate is, for example, a silicon substrate. That is, the material of the substrate of the third electronic component 6 is silicon. In the substrate, the acoustic velocity of the bulk wave propagating through the substrate is higher than the acoustic velocity of the acoustic wave propagating through the piezoelectric layer. Here, the bulk wave propagating through the substrate is the bulk wave having the lowest velocity among the plurality of bulk waves propagating through the substrate. In this embodiment, the substrate and the low acoustic velocity film provided on the substrate constitute the high acoustic velocity member. Moreover, in this embodiment, the substrate is a supporting substrate made of a silicon substrate. In addition, the material of the substrate is not limited to silicon. A material containing either silicon carbide or gallium (III) oxide as a main component, or a material containing a multi-component mixed crystal material composed of two or more of these materials as a main component may be used.
　フィルタを構成する第３電子部品６は、基板と低音速膜との間に設けられている高音速膜を更に有していてもよい。高音速膜では、圧電体層を伝搬する弾性波の音速よりも、高音速膜を伝搬するバルク波の音速が高速である。高音速膜の材料は、例えば、窒化ケイ素であるが、窒化ケイ素に限らず、例えば、ダイヤモンドライクカーボン、窒化アルミニウム、酸化アルミニウム、炭化ケイ素、窒化ケイ素、シリコン、サファイア、タンタル酸リチウム、ニオブ酸リチウム、水晶、ジルコニア、コージライト、ムライト、ステアタイト、フォルステライト、マグネシア、及びダイヤモンドからなる群から選択される少なくとも１種の材料からなっていてもよい。 The third electronic component 6 constituting the filter may further have a high acoustic velocity film provided between the substrate and the low acoustic velocity film. In the high acoustic velocity film, the acoustic velocity of the bulk wave propagating through the high acoustic velocity film is higher than the acoustic velocity of the acoustic wave propagating through the piezoelectric layer. The material of the high-speed film is, for example, silicon nitride, but is not limited to silicon nitride. Examples include diamond-like carbon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, lithium tantalate, and lithium niobate. , quartz, zirconia, cordierite, mullite, steatite, forsterite, magnesia, and diamond.
　また、フィルタを構成する第３電子部品６は、例えば、低音速膜と圧電体層との間に介在する密着層を含んでいてもよい。密着層は、例えば、樹脂（エポキシ樹脂、ポリイミド樹脂）からなる。また、フィルタを構成する第３電子部品６は、低音速膜と圧電体層との間、圧電体層上、又は低音速膜下のいずれかに誘電体膜を備えていてもよい。 Further, the third electronic component 6 that constitutes the filter may include, for example, an adhesion layer interposed between the low sound velocity film and the piezoelectric layer. The adhesion layer is made of resin (epoxy resin, polyimide resin), for example. Further, the third electronic component 6 constituting the filter may have a dielectric film between the low-speed film and the piezoelectric layer, on the piezoelectric layer, or under the low-speed film.
　（４．４）第２電子部品
　複数の第２電子部品５の各々は、整合回路１２１～１２３のインダクタもしくはキャパシタを構成するチップ部品である。複数の第２電子部品５の各々は、ＳＭＤ（Surface Mount Device）である。複数の第２電子部品５の各々は、直方体状である。第１方向Ｄ１からの平面視において、複数の第２電子部品５の各々の外縁は、四角形状である。 (4.4) Second Electronic Component Each of the plurality of second electronic components 5 is a chip component forming an inductor or a capacitor of matching circuits 121-123. Each of the plurality of second electronic components 5 is an SMD (Surface Mount Device). Each of the plurality of second electronic components 5 has a rectangular parallelepiped shape. In plan view from the first direction D1, the outer edge of each of the plurality of second electronic components 5 has a quadrangular shape.
　（５）通信装置
　通信装置９０は、図３に示すように、高周波モジュール１と、送信フィルタ１４１～１４３と、第３スイッチ１７と、出力整合回路１８１、１８２と、パワーアンプ１９１、１９２と、第４スイッチ２０１、２０２と、アンテナ整合回路９２と、アンテナ９１と、信号処理回路９３と、コントローラ２１０と、を備える。高周波モジュール１と、送信フィルタ１４１～１４３と、第３スイッチ１７と、出力整合回路１８１、１８２と、パワーアンプ１９１、１９２と、第４スイッチ２０１、２０２とは、送受信モジュールとして機能する。 (5) Communication Device The communication device 90 includes, as shown in FIG. It includes fourth switches 201 and 202 , an antenna matching circuit 92 , an antenna 91 , a signal processing circuit 93 and a controller 210 . The high frequency module 1, transmission filters 141 to 143, third switch 17, output matching circuits 181 and 182, power amplifiers 191 and 192, and fourth switches 201 and 202 function as transmission/reception modules.
　（５．１）送受信モジュール
　（５．１．１）パワーアンプ
　図３に示すパワーアンプ１９１、１９２は、送信信号を増幅する増幅器である。パワーアンプ１９１、１９２は、アンテナ端子１０１と第４スイッチ２０１、２０２とを結ぶ送信経路Ｔ１のうち第４スイッチ２０１、２０２と複数の送信フィルタ１４１～１４３との間に設けられている。パワーアンプ１９１、１９２は、入力端子（図示せず）及び出力端子（図示せず）を有する。パワーアンプ１９１、１９２の入力端子は、第４スイッチ２０１、２０２を介して信号処理回路９３に接続される。パワーアンプ１９１、１９２の出力端子は、複数の送信フィルタ１４１～１４３に接続されている。パワーアンプ１９１、１９２は、例えば、コントローラ２１０によって制御される。なお、パワーアンプ１９１、１９２は、直接又は間接的に、複数の送信フィルタ１４１～１４３に接続されていればよい。図３の例では、パワーアンプ１９１、１９２は、出力整合回路１８１、１８２と第３スイッチ１７とを介して複数の送信フィルタ１４１～１４３に接続されている。 (5.1) Transmission/Reception Module (5.1.1) Power Amplifiers The power amplifiers 191 and 192 shown in FIG. 3 are amplifiers that amplify transmission signals. The power amplifiers 191 and 192 are provided between the fourth switches 201 and 202 and the plurality of transmission filters 141 to 143 in the transmission path T1 connecting the antenna terminal 101 and the fourth switches 201 and 202 . The power amplifiers 191 and 192 have input terminals (not shown) and output terminals (not shown). Input terminals of the power amplifiers 191 and 192 are connected to the signal processing circuit 93 via fourth switches 201 and 202 . Output terminals of the power amplifiers 191 and 192 are connected to a plurality of transmission filters 141-143. The power amplifiers 191 and 192 are controlled by the controller 210, for example. The power amplifiers 191 and 192 may be directly or indirectly connected to the plurality of transmission filters 141-143. In the example of FIG. 3, power amplifiers 191 and 192 are connected to a plurality of transmission filters 141-143 via output matching circuits 181 and 182 and third switch 17. FIG.
　（５．１．２）送信フィルタ
　図３に示す送信フィルタ１４１～１４３は、互いに異なる通信バンドの送信信号を通過させるフィルタである。複数の送信フィルタ１４１～１４３は、送信信号が通る信号経路である送信経路Ｔ１に設けられている。より詳細には、複数の送信フィルタ１４１～１４３は、送信経路Ｔ１のうちパワーアンプ１９１、１９２と整合回路１２１～１２３との間に設けられている。複数の送信フィルタ１４１～１４３の各々は、パワーアンプ１９１、１９２で増幅された高周波信号のうち、対応する通信バンドの送信帯域の送信信号を通過させる。 (5.1.2) Transmission Filter The transmission filters 141 to 143 shown in FIG. 3 are filters that pass transmission signals of different communication bands. A plurality of transmission filters 141 to 143 are provided in a transmission path T1, which is a signal path through which transmission signals pass. More specifically, the plurality of transmission filters 141-143 are provided between the power amplifiers 191, 192 and the matching circuits 121-123 in the transmission path T1. Each of the plurality of transmission filters 141 to 143 passes transmission signals in the transmission band of the corresponding communication band among the high frequency signals amplified by the power amplifiers 191 and 192 .
　（５．１．３）出力整合回路
　出力整合回路１８１、１８２は、図３に示すように、送信経路Ｔ１のうちパワーアンプ１９１、１９２と複数の送信フィルタ１４１～１４３との間に設けられている。出力整合回路１８１、１８２は、パワーアンプ１９１、１９２と複数の送信フィルタ１４１～１４３とのインピーダンス整合を取るための回路である。 (5.1.3) Output matching circuits Output matching circuits 181 and 182 are provided between power amplifiers 191 and 192 and a plurality of transmission filters 141 to 143 in transmission path T1, as shown in FIG. there is The output matching circuits 181 and 182 are circuits for impedance matching between the power amplifiers 191 and 192 and the plurality of transmission filters 141-143.
　出力整合回路１８１、１８２のそれぞれは、例えば、インダクタを含む構成である。出力整合回路１８１、１８２のインダクタは、送信経路Ｔ１において、パワーアンプ１９１、１９２の出力側に設けられている。なお、出力整合回路１８１、１８２のそれぞれは、１つのインダクタを含む構成であることに限定されず、例えば、複数のインダクタを含む構成であってもよいし、複数のインダクタ及び複数のキャパシタを含む構成であってもよい。要するに、出力整合回路１８１、１８２のそれぞれは、少なくとも１つのインダクタを含む。 Each of the output matching circuits 181 and 182 has a configuration including an inductor, for example. The inductors of the output matching circuits 181 and 182 are provided on the output sides of the power amplifiers 191 and 192 in the transmission path T1. Note that each of the output matching circuits 181 and 182 is not limited to a configuration including one inductor. For example, it may include a plurality of inductors, or may include a plurality of inductors and a plurality of capacitors It may be a configuration. In short, each of the output matching circuits 181, 182 includes at least one inductor.
　（５．１．４）第３スイッチ
　図３に示す第３スイッチ１７は、複数の送信フィルタ１４１～１４３の中からパワーアンプ１９１、１９２に接続される送信フィルタを切り替える。つまり、第３スイッチ１７は、パワーアンプ１９１、１９２に接続させる経路を切り替えるためのスイッチである。第３スイッチ１７は、第１共通端子１７４と、第２共通端子１７５と、複数（図示例では３つ）の選択端子１７１～１７３と、を有する。第１共通端子１７４は、パワーアンプ１９１に接続されている。第２共通端子１７５は、パワーアンプ１９２に接続されている。また、複数の選択端子１７１～１７３のうち選択端子１７１は、送信フィルタ１４１に接続されている。また、複数の選択端子１７１～１７３のうち選択端子１７２は、送信フィルタ１４２に接続されている。複数の選択端子１７１～１７３のうち選択端子１７３は、送信フィルタ１４３に接続されている。 (5.1.4) Third Switch The third switch 17 shown in FIG. 3 switches the transmission filters connected to the power amplifiers 191 and 192 among the multiple transmission filters 141 to 143 . In other words, the third switch 17 is a switch for switching paths to be connected to the power amplifiers 191 and 192 . The third switch 17 has a first common terminal 174, a second common terminal 175, and a plurality of (three in the illustrated example) selection terminals 171-173. The first common terminal 174 is connected to the power amplifier 191 . The second common terminal 175 is connected to the power amplifier 192 . Also, the selection terminal 171 among the plurality of selection terminals 171 to 173 is connected to the transmission filter 141 . A selection terminal 172 among the plurality of selection terminals 171 to 173 is connected to the transmission filter 142 . A selection terminal 173 among the plurality of selection terminals 171 to 173 is connected to the transmission filter 143 .
　第３スイッチ１７は、第１共通端子１７４と第２共通端子１７５とのそれぞれと、複数の選択端子１７１～１７３との接続状態を切り替える。第３スイッチ１７は、例えば、信号処理回路９３によって制御される。第３スイッチ１７は、信号処理回路９３のＲＦ信号処理回路９３１からの制御信号に従って、第１共通端子１７４と第２共通端子１７５との少なくとも１つと、複数の選択端子１７１～１７３の少なくとも１つとを電気的に接続させる。 The third switch 17 switches the connection state between each of the first common terminal 174 and the second common terminal 175 and the plurality of selection terminals 171-173. The third switch 17 is controlled by the signal processing circuit 93, for example. The third switch 17 connects at least one of the first common terminal 174 and the second common terminal 175 and at least one of the plurality of selection terminals 171 to 173 according to the control signal from the RF signal processing circuit 931 of the signal processing circuit 93. are electrically connected.
　（５．１．５）第４スイッチ
　図３に示す第４スイッチ２０１、２０２は、信号処理回路９３と接続される複数の信号入力端子の中からパワーアンプ１９１、１９２に接続される信号入力端子を切り替える。つまり、第４スイッチ２０１、２０２のそれぞれは、パワーアンプ１９１、１９２に接続させる経路を切り替えるためのスイッチである。第４スイッチ２０１は、共通端子２０３と、複数（図示例では２つ）の選択端子２０４、２０５と、を有する。共通端子２０３は、パワーアンプ１９１に接続されている。また、複数の選択端子２０４、２０５のそれぞれは、信号処理回路９３に接続されている。第４スイッチ２０２は、共通端子２０６と、複数（図示例では２つ）の選択端子２０７、２０８と、を有する。共通端子２０６は、パワーアンプ１９２に接続されている。また、複数の選択端子２０７、２０８のそれぞれは、信号処理回路９３に接続されている。 (5.1.5) Fourth Switch Fourth switches 201 and 202 shown in FIG. switch. In other words, each of the fourth switches 201 and 202 is a switch for switching paths to be connected to the power amplifiers 191 and 192 . The fourth switch 201 has a common terminal 203 and a plurality of (two in the illustrated example) selection terminals 204 and 205 . Common terminal 203 is connected to power amplifier 191 . Also, each of the plurality of selection terminals 204 and 205 is connected to the signal processing circuit 93 . The fourth switch 202 has a common terminal 206 and a plurality of (two in the illustrated example) selection terminals 207 and 208 . Common terminal 206 is connected to power amplifier 192 . Also, each of the plurality of selection terminals 207 and 208 is connected to the signal processing circuit 93 .
　第４スイッチ２０１は、共通端子２０３と、複数の選択端子２０４、２０５の接続状態を切り替える。第４スイッチ２０２は、共通端子２０６と、複数の選択端子２０７、２０８の接続状態を切り替える。第４スイッチ２０１は、信号処理回路９３のＲＦ信号処理回路９３１からの制御信号に従って、共通端子２０３と複数の選択端子２０４、２０５のいずれか１つと電気的に接続させる。第４スイッチ２０２は、信号処理回路９３のＲＦ信号処理回路９３１からの制御信号に従って、共通端子２０６と複数の選択端子２０７、２０８のいずれか１つとを電気的に接続させる。 A fourth switch 201 switches the connection state of a common terminal 203 and a plurality of selection terminals 204 and 205 . The fourth switch 202 switches connection states between the common terminal 206 and the plurality of selection terminals 207 and 208 . The fourth switch 201 electrically connects the common terminal 203 and any one of the plurality of selection terminals 204 and 205 according to the control signal from the RF signal processing circuit 931 of the signal processing circuit 93 . The fourth switch 202 electrically connects the common terminal 206 and any one of the plurality of selection terminals 207 and 208 according to the control signal from the RF signal processing circuit 931 of the signal processing circuit 93 .
　（５．１．６）コントローラ
　コントローラ２１０は、例えば、信号処理回路９３からの制御信号に従ってパワーアンプ１９１、１９２を制御する。コントローラ２１０は、パワーアンプ１９１、１９２に接続されている。また、コントローラ２１０は、複数（例えば、４つ）の制御端子を介して信号処理回路９３に接続されている。複数の制御端子は、外部回路（例えば、信号処理回路９３）からの制御信号をコントローラ２１０に入力するための端子である。コントローラ２１０は、複数の制御端子から取得した制御信号に基づいてパワーアンプ１９１、１９２を制御する。複数の制御端子からコントローラ２１０が取得する制御信号は、デジタル信号である。 (5.1.6) Controller The controller 210 controls the power amplifiers 191 and 192 according to control signals from the signal processing circuit 93, for example. Controller 210 is connected to power amplifiers 191 and 192 . Also, the controller 210 is connected to the signal processing circuit 93 via a plurality of (for example, four) control terminals. A plurality of control terminals are terminals for inputting control signals from an external circuit (for example, the signal processing circuit 93 ) to the controller 210 . The controller 210 controls the power amplifiers 191 and 192 based on control signals obtained from a plurality of control terminals. The control signals acquired by the controller 210 from the plurality of control terminals are digital signals.
　（５．２）アンテナ
　アンテナ９１は、高周波モジュール１のアンテナ端子１０１に接続されている。アンテナ９１は、高周波モジュール１から出力された送信信号を電波にて放射する送信機能と、受信信号を電波として外部から受信して高周波モジュール１へ出力する受信機能、とを有する。 (5.2) Antenna The antenna 91 is connected to the antenna terminal 101 of the high frequency module 1 . The antenna 91 has a transmission function of radiating a transmission signal output from the high-frequency module 1 as a radio wave and a reception function of receiving a reception signal as a radio wave from the outside and outputting it to the high-frequency module 1 .
　（５．３）アンテナ整合回路
　アンテナ整合回路９２は、図３に示すように、アンテナ９１と高周波モジュール１のアンテナ端子１０１との間に設けられている。アンテナ整合回路９２は、アンテナ９１と高周波モジュール１とのインピーダンス整合を取るための回路である。 (5.3) Antenna Matching Circuit The antenna matching circuit 92 is provided between the antenna 91 and the antenna terminal 101 of the high frequency module 1, as shown in FIG. The antenna matching circuit 92 is a circuit for impedance matching between the antenna 91 and the high frequency module 1 .
　アンテナ整合回路９２は、インダクタを含む構成である。 The antenna matching circuit 92 is configured to include an inductor.
　（５．４）信号処理回路
　信号処理回路９３は、ＲＦ信号処理回路９３１と、ベースバンド信号処理回路９３２と、を含む。信号処理回路９３は、高周波モジュール１を通る信号を処理する。より詳細には、信号処理回路９３は、送信信号及び受信信号を処理する。 (5.4) Signal Processing Circuit The signal processing circuit 93 includes an RF signal processing circuit 931 and a baseband signal processing circuit 932 . The signal processing circuit 93 processes signals passing through the high frequency module 1 . More specifically, the signal processing circuit 93 processes transmission and reception signals.
　ＲＦ信号処理回路９３１は、例えば、ＲＦＩＣ（Radio Frequency Integrated Circuit）である。ＲＦ信号処理回路９３１は、高周波信号に対する信号処理を行う。 The RF signal processing circuit 931 is, for example, an RFIC (Radio Frequency Integrated Circuit). The RF signal processing circuit 931 performs signal processing on high frequency signals.
　ＲＦ信号処理回路９３１は、ベースバンド信号処理回路９３２から出力された高周波信号に対してアップコンバート等の信号処理を行い、信号処理が行われた高周波信号を、第４スイッチ２０１、２０２を介してパワーアンプ１９１、１９２に出力する。 The RF signal processing circuit 931 performs signal processing such as up-conversion on the high frequency signal output from the baseband signal processing circuit 932, and passes the processed high frequency signal through the fourth switches 201 and 202. Output to power amplifiers 191 and 192 .
　ＲＦ信号処理回路９３１は、高周波モジュール１から出力された高周波信号に対してダウンコンバート等の処理を行い、信号処理が行われた高周波信号をベースバンド信号処理回路９３２に出力する。 The RF signal processing circuit 931 performs processing such as down-conversion on the high frequency signal output from the high frequency module 1 and outputs the processed high frequency signal to the baseband signal processing circuit 932 .
　ベースバンド信号処理回路９３２は、例えば、ＢＢＩＣ（Baseband Integrated Circuit）である。ベースバンド信号処理回路９３２は、信号処理回路９３の外部からの送信信号に対する所定の信号処理を行う。ベースバンド信号処理回路９３２で処理された受信信号は、例えば、画像信号として画像表示のための画像信号として使用され、又は、通話のための音声信号として使用される。 The baseband signal processing circuit 932 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 932 performs predetermined signal processing on a transmission signal from outside the signal processing circuit 93 . The received signal processed by the baseband signal processing circuit 932 is used, for example, as an image signal for displaying an image, or as an audio signal for calling.
　また、ＲＦ信号処理回路９３１は、高周波信号（送信信号、受信信号）の送受に基づいて、第３スイッチ１７、第４スイッチ２０１、２０２、及び、高周波モジュールが有する第１スイッチ１１、第２スイッチ１５の各々の接続を制御する制御部としての機能も有する。具体的には、ＲＦ信号処理回路９３１は、制御信号（図示せず）によって、第３スイッチ１７、第４スイッチ２０１、２０２、及び、高周波モジュールが有する第１スイッチ１１、第２スイッチ１５の各々の接続を切り替える。なお、制御部は、ＲＦ信号処理回路９３１の外部に設けられてもよく、例えば、高周波モジュール１又はベースバンド信号処理回路９３２に設けられていてもよい。 Further, the RF signal processing circuit 931 controls the third switch 17, the fourth switches 201 and 202, and the first switch 11 and the second switch included in the high frequency module based on transmission and reception of high frequency signals (transmission signal, reception signal). It also has a function as a control section that controls each connection of 15. Specifically, the RF signal processing circuit 931 controls the third switch 17, the fourth switches 201 and 202, and the first switch 11 and the second switch 15 of the high-frequency module in accordance with a control signal (not shown). connection. Note that the control unit may be provided outside the RF signal processing circuit 931, and may be provided in the high frequency module 1 or the baseband signal processing circuit 932, for example.
　（６）効果
　実施形態１に係る高周波モジュール１では、第１実装基板２の第１主面２１に第１電子部品４が配置されており、第１実装基板２の第２主面２２に第４電子部品７が配置されている。また、第２実装基板３が第１実装基板２の第２主面２２上に位置している。そして、第２実装基板３の第３主面３１に第２電子部品５が配置されており、第２実装基板３の第４主面３２に第３電子部品６が配置されている。すなわち、第２電子部品５と第３電子部品６とが、第１実装基板２の第２主面２２上に配置されている。つまり、第１方向Ｄ１からの平面視において、第１電子部品４と、第２電子部品５と、第３電子部品６とが重なる。したがって、高周波モジュール１の集積度を向上させ、高周波モジュール１を小型化することができる。 (6) Effect In the high-frequency module 1 according to the first embodiment, the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2 , and the second main surface 22 of the first mounting board 2 is provided with the first electronic component 4 . 4 electronic components 7 are arranged. Also, the second mounting board 3 is positioned on the second main surface 22 of the first mounting board 2 . The second electronic component 5 is arranged on the third main surface 31 of the second mounting board 3 , and the third electronic component 6 is arranged on the fourth main surface 32 of the second mounting board 3 . That is, the second electronic component 5 and the third electronic component 6 are arranged on the second main surface 22 of the first mounting board 2 . That is, the first electronic component 4, the second electronic component 5, and the third electronic component 6 overlap each other in plan view from the first direction D1. Therefore, the degree of integration of the high frequency module 1 can be improved and the size of the high frequency module 1 can be reduced.
　また、実施形態１に係る高周波モジュール１では、第１方向Ｄ１において、第２電子部品５と、第３電子部品６と、第４電子部品７とのそれぞれの第１実装基板２側に第１電子部品４が存在する。したがって、第２電子部品５と、第３電子部品６と、第４電子部品７とのそれぞれにおいて、第１実装基板２側からの電磁波の少なくとも一部が第１電子部品４によって遮蔽される。すなわち、高周波モジュール１において、第２電子部品５と、第３電子部品６と、第４電子部品７とのそれぞれの信号品質の劣化を抑止し、電気特性を向上することができる。 Further, in the high-frequency module 1 according to the first embodiment, the first mounting substrate 2 side of each of the second electronic component 5, the third electronic component 6, and the fourth electronic component 7 in the first direction D1. An electronic component 4 is present. Therefore, in each of the second electronic component 5 , the third electronic component 6 , and the fourth electronic component 7 , at least part of the electromagnetic waves from the first mounting board 2 side is shielded by the first electronic component 4 . That is, in the high-frequency module 1, the deterioration of the signal quality of each of the second electronic component 5, the third electronic component 6, and the fourth electronic component 7 can be suppressed, and the electrical characteristics can be improved.
　また、実施形態１に係る高周波モジュール１では、上述したように、第１方向Ｄ１から平面視したときに、第１電子部品４の面積が第２電子部品５の面積、第３電子部品６の面積、第４電子部品７の面積のいずれに対しても大きい。実施形態１に係る高周波モジュールでは、第１電子部品４は第１実装基板２の第１主面２１側に配置されている。また、第２電子部品５と、第３電子部品６と、第４電子部品７と、第２実装基板３と、内部接続端子２０と、外部接続端子１０との全ては第１実装基板２の第２主面２２側に配置されている。したがって、第２電子部品５、第３電子部品６、第４電子部品７、内部接続端子２０、及び、外部接続端子１０のいずれも、第１方向Ｄ１から平面視したときに、第１電子部品４と重なる位置に配置することができる。つまり、第１電子部品４を第１実装基板２の第２主面２２側に配置する場合と比較して、高周波モジュール１を高集積化、小型化することができる。 Further, in the high-frequency module 1 according to the first embodiment, as described above, when viewed from the first direction D1, the area of the first electronic component 4 is the area of the second electronic component 5, and the area of the third electronic component 6 is Both the area and the area of the fourth electronic component 7 are large. In the high frequency module according to the first embodiment, the first electronic component 4 is arranged on the first main surface 21 side of the first mounting board 2 . Further, the second electronic component 5 , the third electronic component 6 , the fourth electronic component 7 , the second mounting board 3 , the internal connection terminals 20 , and the external connection terminals 10 are all connected to the first mounting board 2 . It is arranged on the second main surface 22 side. Therefore, when the second electronic component 5, the third electronic component 6, the fourth electronic component 7, the internal connection terminals 20, and the external connection terminals 10 are all viewed in plan from the first direction D1, the first electronic component It can be placed in a position overlapping with 4. That is, compared to the case where the first electronic component 4 is arranged on the second main surface 22 side of the first mounting board 2, the high-frequency module 1 can be highly integrated and miniaturized.
　また、実施形態１に係る高周波モジュール１では、第１実装基板２の第１主面２１には第１電子部品４のみが配置されている。したがって、他の電子部品は第２電子部品５、第３電子部品６、第４電子部品７のいずれかとして実装される。したがって、第１実装基板２の面積増大を抑止することができ、高周波モジュール１を高集積化、小型化することができる。また、第１実装基板２の第１主面２１に第１電子部品４以外の電子部品を配置しないことにより、第１実装基板２の第１主面２１に配置されている複数の電子部品間に、第１実装基板２を介した配線を設ける必要がない。したがって、実施形態１に係る高周波モジュール１では、電子部品間の配線の削減により信号品質の劣化を抑止し、高周波モジュール１の電気特性を向上することができる。 Also, in the high-frequency module 1 according to Embodiment 1, only the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2 . Therefore, other electronic components are mounted as either the second electronic component 5 , the third electronic component 6 or the fourth electronic component 7 . Therefore, an increase in the area of the first mounting substrate 2 can be suppressed, and the high-frequency module 1 can be highly integrated and miniaturized. In addition, by not arranging electronic components other than the first electronic component 4 on the first main surface 21 of the first mounting substrate 2 , a plurality of electronic components arranged on the first main surface 21 of the first mounting substrate 2 are In addition, there is no need to provide wiring via the first mounting board 2 . Therefore, in the high-frequency module 1 according to the first embodiment, it is possible to suppress the degradation of signal quality and improve the electrical characteristics of the high-frequency module 1 by reducing wiring between electronic components.
　また、実施形態１に係る高周波モジュール１では、第１電子部品４がＩＣ部品であり、第２電子部品５、第３電子部品６、第４電子部品７のそれぞれは、ＩＣ部品以外の電子部品である。第１電子部品４がＩＣ部品であることにより、第１電子部品４に含まれる各回路の構成部品間の配線を第１電子部品４内部に格納することができ、配線経路を短くすることができる。また、第２電子部品５、第３電子部品６、第４電子部品７のいずれもＩＣ部品ではないため、ＩＣ部品とＩＣ部品との間の配線を行う必要がない。したがって、第１実装基板２内の配線数を削減することができ、信号品質の劣化を抑止して高周波モジュール１の電気特性を向上することができる。 Further, in the high-frequency module 1 according to the first embodiment, the first electronic component 4 is an IC component, and each of the second electronic component 5, the third electronic component 6, and the fourth electronic component 7 is an electronic component other than the IC component. is. Since the first electronic component 4 is an IC component, the wiring between components of each circuit included in the first electronic component 4 can be stored inside the first electronic component 4, and the wiring path can be shortened. can. Further, since none of the second electronic component 5, the third electronic component 6, and the fourth electronic component 7 are IC components, it is not necessary to wire between the IC components. Therefore, it is possible to reduce the number of wirings in the first mounting board 2 , suppress degradation of signal quality, and improve the electrical characteristics of the high-frequency module 1 .
　また、実施形態１に係る高周波モジュール１では第１方向Ｄ１において、第１実装基板２の第２主面２２から、第４電子部品７の第１実装基板２側と反対側の主面までの距離は、第１実装基板２の第２主面２２から第２実装基板３の第４主面３２までの距離よりも大きい。したがって、第４電子部品７の高さが第２電子部品５の高さよりも高い場合でも、第４電子部品７の高さが高周波モジュール１の高さに影響を与えない。したがって、高周波モジュール１の集積度を低下させることなく第４電子部品７としてインダクタ等の高背部品を使用することができる。また、第１方向Ｄ１において、第１実装基板２の第２主面２２から、第４電子部品７の第１実装基板２側と反対側の主面までの距離は、第１実装基板２の第２主面２２から、第３電子部品６の第２実装基板３側と反対側の第５主面６１までの距離よりも小さい。したがって、第４電子部品７の高さが高周波モジュール１の高さに影響を与えない。つまり、実施形態１に係る高周波モジュール１では、高周波モジュール１の小型化と、第４電子部品７として高背部品を使用することによる高周波モジュール１の電気特性の向上と、を両立することができる。 Further, in the high-frequency module 1 according to the first embodiment, in the first direction D1, from the second main surface 22 of the first mounting board 2 to the main surface of the fourth electronic component 7 opposite to the first mounting board 2 side, The distance is greater than the distance from the second main surface 22 of the first mounting board 2 to the fourth main surface 32 of the second mounting board 3 . Therefore, even if the height of the fourth electronic component 7 is higher than the height of the second electronic component 5 , the height of the fourth electronic component 7 does not affect the height of the high frequency module 1 . Therefore, a tall component such as an inductor can be used as the fourth electronic component 7 without lowering the degree of integration of the high frequency module 1 . In the first direction D1, the distance from the second main surface 22 of the first mounting board 2 to the main surface of the fourth electronic component 7 opposite to the first mounting board 2 side is It is smaller than the distance from the second main surface 22 to the fifth main surface 61 of the third electronic component 6 on the side opposite to the second mounting substrate 3 side. Therefore, the height of the fourth electronic component 7 does not affect the height of the high frequency module 1 . That is, in the high-frequency module 1 according to the first embodiment, both miniaturization of the high-frequency module 1 and improvement of the electrical characteristics of the high-frequency module 1 by using a tall component as the fourth electronic component 7 can be achieved. .
　また、実施形態１に係る高周波モジュール１では、第２電子部品５として整合回路１２１～１２３を備え、第３電子部品６として受信フィルタ１３１～１３３を備える。したがって、互いに接続される電子部品が、第２実装基板３を挟んで第３主面３１と第４主面３２とのそれぞれの面に配置されている。そのため、整合回路１２１～１２３から受信フィルタ１３１～１３３までの配線を、第２実装基板３の導電層と、第２実装基板３の導電層と整合回路１２１～１２３とを繋ぐ導電部（バンプ等）と、第２実装基板３の導電層と受信フィルタ１３１～１３３とを繋ぐ導電部（バンプ等）とで実現できる。すなわち、整合回路１２１～１２３から受信フィルタ１３１～１３３までの配線を、内部接続端子２０と第１実装基板２とを経由せずに実現できる。つまり、実施形態１に係る高周波モジュール１では、電子部品間の配線を短くすることで、信号品質の劣化を抑止することができる。したがって、高周波モジュール１の電気特性を向上することができる。 Further, the high-frequency module 1 according to the first embodiment includes matching circuits 121 to 123 as the second electronic component 5 and reception filters 131 to 133 as the third electronic component 6 . Therefore, the electronic components to be connected to each other are arranged on the respective surfaces of the third main surface 31 and the fourth main surface 32 with the second mounting board 3 interposed therebetween. Therefore, the wiring from the matching circuits 121 to 123 to the reception filters 131 to 133 is replaced with a conductive layer of the second mounting substrate 3 and a conductive portion (such as a bump) that connects the conductive layer of the second mounting substrate 3 and the matching circuits 121 to 123. ) and a conductive portion (bump or the like) connecting the conductive layer of the second mounting board 3 and the reception filters 131 to 133 . That is, the wiring from the matching circuits 121 to 123 to the reception filters 131 to 133 can be realized without going through the internal connection terminal 20 and the first mounting board 2 . That is, in the high-frequency module 1 according to the first embodiment, the deterioration of signal quality can be suppressed by shortening the wiring between electronic components. Therefore, the electrical characteristics of the high frequency module 1 can be improved.
　また、実施形態１に係る高周波モジュール１では、第３電子部品６として受信フィルタ１３１～１３３を備えることにより、高周波モジュール１の低背化が容易である。具体的には、第３電子部品６として受信フィルタ１３１～１３３が弾性波フィルタである場合、第３電子部品６の第２実装基板３側とは反対側の第５主面６１は、シリコンの基板の第２実装基板３側とは反対側の第７主面である。したがって、第３電子部品６の外周面の全体を第２樹脂層８２で覆う場合、第２樹脂層８２を研磨することで、高周波モジュール１の低背化を図ることができる。すなわち、第２樹脂層８２の研磨により、第３電子部品６の第５主面６１を第２樹脂層８２から露出させるとともに、第３電子部品６の第５主面６１と、第２樹脂層８２の第１実装基板２側とは反対側の主面８２１とを同一平面とすることができる。したがって、外部基板と第２実装基板３との距離を近づけることができ、高周波モジュール１の低背化を実現することができる。 In addition, since the high-frequency module 1 according to the first embodiment includes the reception filters 131 to 133 as the third electronic component 6, the height of the high-frequency module 1 can be easily reduced. Specifically, when the reception filters 131 to 133 as the third electronic component 6 are elastic wave filters, the fifth main surface 61 of the third electronic component 6 opposite to the second mounting substrate 3 is made of silicon. It is the seventh main surface of the substrate opposite to the second mounting substrate 3 side. Therefore, when the entire outer peripheral surface of the third electronic component 6 is covered with the second resin layer 82 , the height of the high-frequency module 1 can be reduced by polishing the second resin layer 82 . That is, by polishing the second resin layer 82, the fifth main surface 61 of the third electronic component 6 is exposed from the second resin layer 82, and the fifth main surface 61 of the third electronic component 6 and the second resin layer The main surface 821 on the side opposite to the first mounting board 2 side of 82 can be coplanar. Therefore, the distance between the external board and the second mounting board 3 can be shortened, and the height of the high frequency module 1 can be reduced.
　また、実施形態１に係る高周波モジュール１では、第１電子部品４の主面４１と外部接続端子１０の少なくとも一部を、第１樹脂層８１及び第２樹脂層８２で覆っている。したがって、高周波モジュール１を物理的破損から保護するとともに排熱性を向上し、高周波モジュール１の信頼性を向上することができる。 Further, in the high-frequency module 1 according to Embodiment 1, the main surface 41 of the first electronic component 4 and at least a portion of the external connection terminals 10 are covered with the first resin layer 81 and the second resin layer 82 . Therefore, it is possible to protect the high frequency module 1 from physical damage, improve heat dissipation, and improve the reliability of the high frequency module 1 .
　また、実施形態１に係る高周波モジュール１では、第１電子部品４の主面４１の少なくとも一部と、第１実装基板２の外周面２３の少なくとも一部とを、金属電極層９で覆っている。したがって、高周波モジュール１と高周波モジュール１の外部との間の電磁結合を抑制し、シールド性を向上することができる。 Further, in the high-frequency module 1 according to the first embodiment, at least part of the main surface 41 of the first electronic component 4 and at least part of the outer peripheral surface 23 of the first mounting board 2 are covered with the metal electrode layer 9. there is Therefore, electromagnetic coupling between the high-frequency module 1 and the outside of the high-frequency module 1 can be suppressed, and shielding performance can be improved.
　また、実施形態１に係る高周波モジュール１では、内部接続端子２０の少なくとも１つが第２電子部品５と第３電子部品６との間に存在する。したがって、内部接続端子２０が、第２電子部品５と第３電子部品６との電磁結合を抑止する電磁シールドとして機能する。そのため、高周波モジュール１の電気特性を向上することができる。 Also, in the high-frequency module 1 according to Embodiment 1, at least one of the internal connection terminals 20 exists between the second electronic component 5 and the third electronic component 6 . Therefore, the internal connection terminal 20 functions as an electromagnetic shield that suppresses electromagnetic coupling between the second electronic component 5 and the third electronic component 6 . Therefore, the electrical characteristics of the high frequency module 1 can be improved.
　（実施形態２）
　実施形態２に係る高周波モジュール１ａについて、図４を参照して説明する。実施形態２に係る高周波モジュール１ａに関し、実施形態１に係る高周波モジュール１と同様の構成については、同一の符号を付して説明を省略する。 (Embodiment 2)
A high-frequency module 1a according to Embodiment 2 will be described with reference to FIG. Regarding the high-frequency module 1a according to the second embodiment, the same components as those of the high-frequency module 1 according to the first embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.
　実施形態２に係る高周波モジュール１ａでは、図４に示すように、金属電極層９が第１電子部品４の主面４１と外周面４２とに接している点で、実施形態１に係る高周波モジュール１（図２参照）と相違する。 In the high frequency module 1a according to the second embodiment, as shown in FIG. 4, the metal electrode layer 9 is in contact with the main surface 41 and the outer peripheral surface 42 of the first electronic component 4. 1 (see FIG. 2).
　実施形態２に係る高周波モジュール１ａは、図４に示すように、第１実装基板２の第１主面２１側に樹脂層が存在せず、金属電極層９が第１電子部品４の主面４１と外周面４２とに接している。樹脂層８ａは、実施形態１に係る第２樹脂層８２と同様、第１実装基板２の第２主面２２に配置されている。樹脂層８ａは、第１実装基板２の第２主面２２に実装されている第４電子部品７の外周面を覆っている。また、樹脂層８ａは、第２実装基板３の第３主面３１に実装されている第２電子部品５の第１実装基板２側の主面と、第２電子部品５の外周面と、を覆っている。さらに、第２樹脂層８２は、第２実装基板３の第４主面３２に実装されている第３電子部品６の外周面を覆っている。また、樹脂層８ａは、複数の内部接続端子２０の外周面と、複数の外部接続端子１０の外周面、とを覆っている。なお、樹脂層８ａは、第３電子部品６の第２実装基板３側とは反対側の第５主面６１を覆っていない。また、樹脂層８ａの第１実装基板２側とは反対側の主面８１ａと、第３電子部品６の第５主面６１とは、同一平面上に存在してもよい。また、樹脂層８ａは、第４電子部品７の第１実装基板２側とは反対側の主面を覆っていなくてもよい。樹脂層８ａは、樹脂（例えば、エポキシ樹脂）を含む。第２樹脂層８２は、樹脂のほかにフィラーを含んでいてもよい。 In the high-frequency module 1a according to the second embodiment, as shown in FIG. 41 and the outer peripheral surface 42 . The resin layer 8a is arranged on the second main surface 22 of the first mounting board 2, like the second resin layer 82 according to the first embodiment. The resin layer 8 a covers the outer peripheral surface of the fourth electronic component 7 mounted on the second main surface 22 of the first mounting board 2 . Further, the resin layer 8a is formed by the main surface of the second electronic component 5 mounted on the third main surface 31 of the second mounting substrate 3 on the side of the first mounting substrate 2, the outer peripheral surface of the second electronic component 5, covering the Furthermore, the second resin layer 82 covers the outer peripheral surface of the third electronic component 6 mounted on the fourth main surface 32 of the second mounting board 3 . Further, the resin layer 8 a covers the outer peripheral surfaces of the plurality of internal connection terminals 20 and the outer peripheral surfaces of the plurality of external connection terminals 10 . The resin layer 8a does not cover the fifth main surface 61 of the third electronic component 6 on the side opposite to the second mounting substrate 3 side. Further, the main surface 81a of the resin layer 8a opposite to the first mounting board 2 side and the fifth main surface 61 of the third electronic component 6 may be on the same plane. Moreover, the resin layer 8 a does not have to cover the main surface of the fourth electronic component 7 on the side opposite to the first mounting substrate 2 side. The resin layer 8a contains resin (for example, epoxy resin). The second resin layer 82 may contain filler in addition to resin.
　金属電極層９は、第１電子部品４における第１実装基板２側とは反対側の主面４１と、第１実装基板２の外周面２３と、樹脂層８ａの外周面８２ａの一部とを覆っている。 The metal electrode layer 9 is formed on the main surface 41 of the first electronic component 4 opposite to the first mounting board 2 side, the outer peripheral surface 23 of the first mounting board 2, and a part of the outer peripheral surface 82a of the resin layer 8a. covering the
　実施形態２に係る高周波モジュール１ａにおいても、実施形態１に係る高周波モジュール１と同様、第１実装基板２の第１主面２１に第１電子部品４が配置されており、第１実装基板２の第２主面２２に第４電子部品７が配置されている。また、第２実装基板３は、第１実装基板２の第２主面２２上に位置している。そして、第２実装基板３の第３主面３１に第２電子部品５が配置されており、第２実装基板３の第４主面３２に第３電子部品６が配置されている。つまり、第１方向Ｄ１からの平面視において、第１電子部品４と、第２電子部品５と、第３電子部品６とが重なる。したがって、高周波モジュール１ａの集積度を向上させ、高周波モジュール１ａを小型化することができる。 Also in the high-frequency module 1a according to the second embodiment, the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2, similarly to the high-frequency module 1 according to the first embodiment. The fourth electronic component 7 is arranged on the second main surface 22 of the . Also, the second mounting board 3 is positioned on the second main surface 22 of the first mounting board 2 . The second electronic component 5 is arranged on the third main surface 31 of the second mounting board 3 , and the third electronic component 6 is arranged on the fourth main surface 32 of the second mounting board 3 . That is, the first electronic component 4, the second electronic component 5, and the third electronic component 6 overlap each other in plan view from the first direction D1. Therefore, the degree of integration of the high frequency module 1a can be improved and the size of the high frequency module 1a can be reduced.
　また、実施形態２に係る高周波モジュール１ａによれば、金属電極層９が第１電子部品４の主面４１に直接接触している。したがって、高周波モジュール１ａをさらに小型化、特に低背化することができる。また、第１電子部品４から金属電極層９への熱伝導率が向上し、高周波モジュール１ａの信頼性を向上させることができる。 Also, according to the high-frequency module 1 a according to the second embodiment, the metal electrode layer 9 is in direct contact with the main surface 41 of the first electronic component 4 . Therefore, the high-frequency module 1a can be further miniaturized, particularly reduced in height. Moreover, the thermal conductivity from the first electronic component 4 to the metal electrode layer 9 is improved, and the reliability of the high frequency module 1a can be improved.
　（実施形態３）
　実施形態３に係る高周波モジュール１ｂについて、図５を参照して説明する。実施形態３に係る高周波モジュール１ｂに関し、実施形態１に係る高周波モジュール１と同様の構成については、同一の符号を付して説明を省略する。 (Embodiment 3)
A high-frequency module 1b according to Embodiment 3 will be described with reference to FIG. Regarding the high-frequency module 1b according to the third embodiment, the same reference numerals are given to the same configurations as those of the high-frequency module 1 according to the first embodiment, and the description thereof is omitted.
　実施形態３に係る高周波モジュール１ｂでは、図５に示すように、第２電子部品５ａとして受信フィルタ１３１～１３３が配置されており、第３電子部品６ａとして整合回路１２１～１２３の構成部品が配置されている点で、実施形態１に係る高周波モジュール１（図２参照）と相違する。 In the high-frequency module 1b according to the third embodiment, as shown in FIG. 5, reception filters 131 to 133 are arranged as the second electronic component 5a, and components of matching circuits 121 to 123 are arranged as the third electronic component 6a. is different from the high-frequency module 1 (see FIG. 2) according to the first embodiment.
　実施形態３に係る高周波モジュール１ｂでは、第２実装基板３の第３主面３１に第２電子部品５ａとして受信フィルタ１３１～１３３が配置されている。また、第２実装基板３の第４主面３２に第３電子部品６ａとして整合回路１２１～１２３の構成部品が配置されている。したがって、実施形態１と同様に、そのため、整合回路１２１～１２３から受信フィルタ１３１～１３３までの配線を、第２実装基板３の導電層と、第２実装基板３の導電層と整合回路１２１～１２３とを繋ぐ導電部（バンプ等）と、第２実装基板３の導電層と受信フィルタ１３１～１３３とを繋ぐ導電部（バンプ等）とで実現できる。すなわち、整合回路１２１～１２３から受信フィルタ１３１～１３３までの配線を、内部接続端子２０と第１実装基板２とを経由せずに実現できる。つまり、実施形態３においても、第２電子部品５ａと第３電子部品６ａとの間の信号について信号品質の劣化を抑止し、高周波モジュール１ｂの電気特性を向上することができる。 In the high frequency module 1b according to the third embodiment, reception filters 131 to 133 are arranged on the third main surface 31 of the second mounting board 3 as the second electronic components 5a. Components of matching circuits 121 to 123 are arranged on the fourth main surface 32 of the second mounting board 3 as the third electronic component 6a. Therefore, as in the first embodiment, the wiring from the matching circuits 121 to 123 to the reception filters 131 to 133 is connected to the conductive layer of the second mounting board 3, the conductive layer of the second mounting board 3, and the matching circuits 121 to 133. 123, and conductive portions (bumps, etc.) connecting the conductive layer of the second mounting board 3 and the reception filters 131 to 133. FIG. That is, the wiring from the matching circuits 121 to 123 to the reception filters 131 to 133 can be realized without going through the internal connection terminal 20 and the first mounting board 2 . That is, in the third embodiment as well, it is possible to suppress deterioration of the signal quality of the signal between the second electronic component 5a and the third electronic component 6a and improve the electrical characteristics of the high frequency module 1b.
　なお、実施形態３に係る高周波モジュール１ｂでは、第２樹脂層８２は、第３電子部品６ａの第２実装基板３側とは反対側の主面を覆ってもよい。 In addition, in the high-frequency module 1b according to the third embodiment, the second resin layer 82 may cover the main surface of the third electronic component 6a on the side opposite to the second mounting substrate 3 side.
　実施形態３に係る高周波モジュール１ｂにおいても、実施形態１に係る高周波モジュール１と同様、第１実装基板２の第１主面２１に第１電子部品４が配置されており、第１実装基板２の第２主面２２に第４電子部品７が配置されている。また、第２実装基板３は、第１実装基板２の第２主面２２上に位置している。そして、第２実装基板３の第３主面３１に第２電子部品５ａが配置されており、第２実装基板３の第４主面３２に第３電子部品６ａが配置されている。つまり、第１方向Ｄ１からの平面視において、第１電子部品４と、第２電子部品５ａと、第３電子部品６ａとが重なる。したがって、高周波モジュール１の集積度を向上させ、高周波モジュール１ａを小型化することができる。 Also in the high frequency module 1b according to the third embodiment, as in the high frequency module 1 according to the first embodiment, the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2, and the first mounting board 2 The fourth electronic component 7 is arranged on the second main surface 22 of the . Also, the second mounting board 3 is positioned on the second main surface 22 of the first mounting board 2 . A second electronic component 5 a is arranged on the third main surface 31 of the second mounting board 3 , and a third electronic component 6 a is arranged on the fourth main surface 32 of the second mounting board 3 . In other words, the first electronic component 4, the second electronic component 5a, and the third electronic component 6a overlap in plan view from the first direction D1. Therefore, the degree of integration of the high frequency module 1 can be improved and the size of the high frequency module 1a can be reduced.
　（実施形態４）
　実施形態４に係る高周波モジュール１ｃについて、図６を参照して説明する。実施形態４に係る高周波モジュール１ｃに関し、実施形態１に係る高周波モジュール１と同様の構成については、同一の符号を付して説明を省略する。 (Embodiment 4)
A high-frequency module 1c according to Embodiment 4 will be described with reference to FIG. Regarding the high-frequency module 1c according to the fourth embodiment, the same components as those of the high-frequency module 1 according to the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
　実施形態４に係る高周波モジュール１ｃでは、外部接続端子が、第１外部接続端子１０と、第２外部接続端子１０ａとを含む点で、実施形態１に係る高周波モジュール１（図２参照）と相違する。第２外部接続端子１０ａは、第１方向Ｄ１からの平面視において、第２実装基板３と第４電子部品７との間に配置されている。 The high-frequency module 1c according to the fourth embodiment differs from the high-frequency module 1 according to the first embodiment (see FIG. 2) in that external connection terminals include a first external connection terminal 10 and a second external connection terminal 10a. do. The second external connection terminal 10a is arranged between the second mounting board 3 and the fourth electronic component 7 in plan view from the first direction D1.
　実施形態４に係る高周波モジュール１ｃでは、外部接続端子は、第１方向Ｄ１からの平面視において、第１外部接続端子１０と、第２実装基板３と第４電子部品７との間に配置されている第２外部接続端子１０ａとを含む。すなわち、高周波モジュール１ｃは、第１実装基板２の第２主面２２に、第１外部接続端子１０と、第２外部接続端子１０ａとが配置されている。第１外部接続端子１０と、第２外部接続端子１０ａとは、いずれも、外部回路（例えば、信号処理回路９３）と電気的に接続させるための端子である。第２外部接続端子１０ａは、第２実装基板３と第４電子部品７との間に配置されている。したがって、第４電子部品７と、第２実装基板３及び第２電子部品５、第３電子部品６との磁気結合が、第２外部接続端子１０ａによって抑止される。なお、第２外部接続端子１０ａの第１方向Ｄ１における長さは、第４電子部品７と、第２実装基板３及び第２電子部品５、第３電子部品６との磁気結合に係る電磁波の波長λに対し、λ／４以下であることが好ましい。 In the high-frequency module 1c according to the fourth embodiment, the external connection terminals are arranged between the first external connection terminals 10, the second mounting substrate 3, and the fourth electronic component 7 in plan view from the first direction D1. and a second external connection terminal 10a. That is, the high-frequency module 1 c has the first external connection terminals 10 and the second external connection terminals 10 a arranged on the second main surface 22 of the first mounting board 2 . Both the first external connection terminal 10 and the second external connection terminal 10a are terminals for electrically connecting to an external circuit (for example, the signal processing circuit 93). The second external connection terminals 10 a are arranged between the second mounting substrate 3 and the fourth electronic component 7 . Therefore, the magnetic coupling between the fourth electronic component 7 and the second mounting board 3, the second electronic component 5, and the third electronic component 6 is suppressed by the second external connection terminals 10a. The length of the second external connection terminal 10a in the first direction D1 is the length of the electromagnetic wave associated with the magnetic coupling between the fourth electronic component 7, the second mounting board 3, the second electronic component 5, and the third electronic component 6. It is preferably λ/4 or less with respect to the wavelength λ.
　実施形態４に係る高周波モジュール１ｃにおいても、実施形態１に係る高周波モジュール１と同様、第１実装基板２の第１主面２１に第１電子部品４が配置されており、第１実装基板２の第２主面２２に第４電子部品７が配置されている。また、第２実装基板３は、第１実装基板２の第２主面２２上に位置している。そして、第２実装基板３の第３主面３１に第２電子部品５が配置されており、第２実装基板３の第４主面３２に第３電子部品６が配置されている。つまり、第１方向Ｄ１からの平面視において、第１電子部品４と、第２電子部品５と、第３電子部品６とが重なる。したがって、高周波モジュール１ａの集積度を向上させ、高周波モジュール１ｃを小型化することができる。 Also in the high-frequency module 1c according to the fourth embodiment, as in the high-frequency module 1 according to the first embodiment, the first electronic component 4 is arranged on the first main surface 21 of the first mounting board 2, and the first mounting board 2 The fourth electronic component 7 is arranged on the second main surface 22 of the . Also, the second mounting board 3 is positioned on the second main surface 22 of the first mounting board 2 . The second electronic component 5 is arranged on the third main surface 31 of the second mounting board 3 , and the third electronic component 6 is arranged on the fourth main surface 32 of the second mounting board 3 . That is, the first electronic component 4, the second electronic component 5, and the third electronic component 6 overlap each other in plan view from the first direction D1. Therefore, the degree of integration of the high frequency module 1a can be improved, and the size of the high frequency module 1c can be reduced.
　また、実施形態４に係る高周波モジュール１ｃによれば、第１方向Ｄ１からの平面視において、第２実装基板３と第４電子部品７との間に配置されている第２外部接続端子１０ａを１以上含む。したがって、第４電子部品７と、第２実装基板３及び第２電子部品５、第３電子部品６との磁気結合を抑止することができ、高周波モジュール１ｃの電気特性を向上することができる。 Further, according to the high-frequency module 1c according to the fourth embodiment, the second external connection terminals 10a arranged between the second mounting substrate 3 and the fourth electronic component 7 are arranged in a plan view from the first direction D1. 1 or more. Therefore, magnetic coupling between the fourth electronic component 7 and the second mounting substrate 3, the second electronic component 5, and the third electronic component 6 can be suppressed, and the electrical characteristics of the high frequency module 1c can be improved.
　（変形例）
　実施形態１～４の変形例について説明する。 (Modification)
Modifications of Embodiments 1 to 4 will be described.
　実施形態１～４に係る複数の受信フィルタ１３１～１３３の各々は、表面弾性波フィルタに限らず、例えば、ＢＡＷ（Bulk Acoustic Wave）フィルタであってもよい。ＢＡＷフィルタにおける共振子は、例えば、ＦＢＡＲ（Film Bulk Acoustic Resonator）又はＳＭＲ（Solidly Mounted Resonator）である。ＢＡＷフィルタは、基板を有している。基板は、例えば、シリコン基板である。 Each of the plurality of reception filters 131 to 133 according to Embodiments 1 to 4 is not limited to surface acoustic wave filters, and may be BAW (Bulk Acoustic Wave) filters, for example. Resonators in BAW filters are, for example, FBARs (Film Bulk Acoustic Resonators) or SMRs (Solidly Mounted Resonators). A BAW filter has a substrate. The substrate is, for example, a silicon substrate.
　また、実施形態１～４に係る複数の受信フィルタ１３１～１３３の各々は、ラダー型フィルタに限らず、例えば、縦結合共振子型弾性表面波フィルタでもよい。 Further, each of the plurality of reception filters 131 to 133 according to Embodiments 1 to 4 is not limited to ladder filters, and may be, for example, longitudinally coupled resonator surface acoustic wave filters.
　また、上述の弾性波フィルタは、表面弾性波又はバルク弾性波を利用する弾性波フィルタであるが、これに限らず、例えば、弾性境界波、板波等を利用する弾性波フィルタであってもよい。 In addition, although the above-described acoustic wave filter is an acoustic wave filter that utilizes surface acoustic waves or bulk acoustic waves, it is not limited to this, and may be an acoustic wave filter that utilizes boundary acoustic waves, plate waves, or the like, for example. good.
　また、実施形態１～４に係る通信装置９０は、高周波モジュール１の代わりに、高周波モジュール１ａ、１ｂ、１ｃのいずれかを備えてもよい。 Further, the communication device 90 according to Embodiments 1 to 4 may include any one of the high- frequency modules 1a, 1b, and 1c instead of the high-frequency module 1.
　また、実施形態１～４に係る高周波モジュール１、１ａ、１ｂ、１ｃは、送信フィルタ１４１～１４３やパワーアンプ１９１、１９２等を更に備える送受信モジュールであってもよい。 Further, the high- frequency modules 1, 1a, 1b, and 1c according to Embodiments 1 to 4 may be transmission/reception modules further including transmission filters 141 to 143, power amplifiers 191 and 192, and the like.
　また、高周波モジュール１、１ａ、１ｂは、第２外部接続端子１０ａを備えてもよい。 Also, the high- frequency modules 1, 1a, and 1b may include second external connection terminals 10a.
　また、高周波モジュール１、１ａ、１ｂ、１ｃは、金属電極層９を備えないとしてもよい。また、高周波モジュール１、１ｂ、１ｃは、第２樹脂層８２を備えないとしてもよく、同様に、高周波モジュール１ａは、樹脂層８ａを備えないとしてもよい。 Also, the high- frequency modules 1, 1a, 1b, and 1c may not include the metal electrode layer 9. Further, the high- frequency modules 1, 1b, and 1c may not include the second resin layer 82, and similarly, the high-frequency module 1a may not include the resin layer 8a.
　また、実施形態１～４において、第２実装基板３は、２つの導電層と１つの誘電体層とを備える基板に限らず、複数の導電層と複数の誘電体層とを備える多層基板であってもよい。なお、第２実装基板３が多層基板である場合にも、第２実装基板３の第１方向Ｄ１における厚さＷ２は、第１実装基板２の第１方向Ｄ１における厚さＷ１より小さいことが好ましい。具体的には、多層基板である第２実装基板３の複数の導電層と複数の誘電体層との積層数は、第１実装基板２の複数の導電層と複数の誘電体層との積層数よりも少ない。 Further, in Embodiments 1 to 4, the second mounting board 3 is not limited to a board comprising two conductive layers and one dielectric layer, but may be a multilayer board comprising a plurality of conductive layers and a plurality of dielectric layers. There may be. Note that even when the second mounting board 3 is a multilayer board, the thickness W2 of the second mounting board 3 in the first direction D1 may be smaller than the thickness W1 of the first mounting board 2 in the first direction D1. preferable. Specifically, the number of layers of the plurality of conductive layers and the plurality of dielectric layers of the second mounting board 3, which is a multilayer board, is equal to the number of layers of the plurality of conductive layers and the plurality of dielectric layers of the first mounting board 2. less than a number.
　また、実施形態１～４において、第２電子部品５及び第３電子部品６の数は３に限らず、任意の数であってよい。 Further, in Embodiments 1 to 4, the number of second electronic components 5 and third electronic components 6 is not limited to three, and may be any number.
　また、実施形態１～４において、第４電子部品７の数は２に限らず、任意の数であってもよい。または、高周波モジュール１、１ａ、１ｂ、１ｃは、第４電子部品７を備えないとしてもよい。 Further, in Embodiments 1 to 4, the number of fourth electronic components 7 is not limited to two, and may be any number. Alternatively, the high- frequency modules 1, 1a, 1b, and 1c may not include the fourth electronic component 7.
　また、実施形態１～４において、第１電子部品４が、第１方向Ｄ１に交差する向きに延伸する金属層を備えてもよい。このような構成により、第１電子部品４が備える金属層より第１実装基板２側が、高周波モジュール１の外部の電磁場より遮蔽される。また、第１実装基板２、第２実装基板３、第２電子部品５、第３電子部品６、第４電子部品７、内部接続端子２０、外部接続端子１０のそれぞれが、高周波モジュール１の外部の電磁場より遮蔽される。したがって、高周波モジュール１の電気特性を向上することができる。 Further, in Embodiments 1 to 4, the first electronic component 4 may include a metal layer extending in a direction intersecting the first direction D1. With such a configuration, the first mounting substrate 2 side of the metal layer of the first electronic component 4 is shielded from the electromagnetic field outside the high frequency module 1 . Also, the first mounting board 2 , the second mounting board 3 , the second electronic component 5 , the third electronic component 6 , the fourth electronic component 7 , the internal connection terminals 20 , and the external connection terminals 10 are connected to the outside of the high-frequency module 1 . is shielded from the electromagnetic field of Therefore, the electrical characteristics of the high frequency module 1 can be improved.
　本明細書において、「要素は、基板の第１主面に配置されている」は、要素が基板の第１主面上に直接実装されている場合だけでなく、基板で隔された第１主面側の空間及び第２主面側の空間のうち、第１主面側の空間に要素が配置されている場合を含む。つまり、「要素は、基板の第１主面に配置されている」は、要素が基板の第１主面上に、他の回路素子又は電極等を介して実装されている場合を含む。要素は、例えば、第１電子部品４であるが、第１電子部品４に限定されない。基板は、例えば、第１実装基板２である。基板が第１実装基板２である場合、第１主面は第１主面２１であり、第２主面は第２主面２２である。 In this specification, "the element is arranged on the first major surface of the substrate" means not only when the element is mounted directly on the first major surface of the substrate, but also when the element is mounted on the first major surface separated by the substrate. This includes the case where the element is arranged in the space on the first main surface side, out of the space on the main surface side and the space on the second main surface side. In other words, "the element is arranged on the first main surface of the substrate" includes the case where the element is mounted on the first main surface of the substrate via other circuit elements, electrodes, or the like. The element is, for example, the first electronic component 4 , but is not limited to the first electronic component 4 . The board is, for example, the first mounting board 2 . When the substrate is the first mounting substrate 2 , the first major surface is the first major surface 21 and the second major surface is the second major surface 22 .
　本明細書において、「要素は、基板の第２主面に配置されている」は、要素が基板の第２主面上に直接実装されている場合だけでなく、基板で隔された第１主面側の空間及び第２主面側の空間のうち、第２主面側の空間に要素が配置されている場合を含む。つまり、「要素は、基板の第２主面に配置されている」は、要素が基板の第２主面上に、他の回路素子又は電極等を介して実装されている場合を含む。要素は、例えば、第２電子部品５、第３電子部品６、第４電子部品７であるが、第２電子部品５、第３電子部品６、第４電子部品７に限定されない。基板は、例えば、第１実装基板２である。基板が第１実装基板２である場合、第１主面は第１主面２１であり、第２主面は第２主面２２である。 As used herein, "the element is disposed on the second major surface of the substrate" means not only when the element is mounted directly on the second major surface of the substrate, but also when the element is mounted on the first major surface separated by the substrate. Of the space on the side of the main surface and the space on the side of the second main surface, the case where the element is arranged in the space on the side of the second main surface is included. In other words, "the element is arranged on the second main surface of the substrate" includes the case where the element is mounted on the second main surface of the substrate via other circuit elements, electrodes, or the like. The elements are, for example, the second electronic component 5 , the third electronic component 6 and the fourth electronic component 7 , but are not limited to the second electronic component 5 , the third electronic component 6 and the fourth electronic component 7 . The board is, for example, the first mounting board 2 . When the substrate is the first mounting substrate 2 , the first major surface is the first major surface 21 and the second major surface is the second major surface 22 .
　本明細書において、「要素は、基板の第３主面に配置されている」は、要素が基板の第３主面上に直接実装されている場合だけでなく、基板で隔された第３主面側の空間及び第４主面側の空間のうち、第３主面側の空間に要素が配置されている場合を含む。つまり、「要素は、基板の第３主面に配置されている」は、要素が基板の第３主面上に、他の回路素子又は電極等を介して実装されている場合を含む。要素は、例えば、第２電子部品５であるが、第２電子部品５に限定されない。基板は、例えば、第２実装基板３である。基板が第２実装基板３である場合、第３主面は第３主面３１であり、第４主面は第４主面３２である。 As used herein, "the element is disposed on the third major surface of the substrate" means not only when the element is mounted directly on the third major surface of the substrate, but also when the element is mounted directly on the third major surface of the substrate. This includes the case where the element is arranged in the space on the side of the third principal surface, out of the space on the side of the principal surface and the space on the side of the fourth principal surface. In other words, "the element is arranged on the third main surface of the substrate" includes the case where the element is mounted on the third main surface of the substrate via other circuit elements, electrodes, or the like. The element is, for example, the second electronic component 5 , but is not limited to the second electronic component 5 . The board is, for example, the second mounting board 3 . When the substrate is the second mounting substrate 3 , the third main surface is the third main surface 31 and the fourth main surface is the fourth main surface 32 .
　本明細書において、「要素は、基板の第４主面に配置されている」は、要素が基板の第４主面上に直接実装されている場合だけでなく、基板で隔された第３主面側の空間及び第４主面側の空間のうち、第４主面側の空間に要素が配置されている場合を含む。つまり、「要素は、基板の第４主面に配置されている」は、要素が基板の第４主面上に、他の回路素子又は電極等を介して実装されている場合を含む。要素は、例えば、第３電子部品６であるが、第３電子部品６に限定されない。基板は、例えば、第２実装基板３である。基板が第２実装基板３である場合、第３主面は第３主面３１であり、第４主面は第４主面３２である。 In this specification, "the element is arranged on the fourth major surface of the substrate" means not only when the element is mounted directly on the fourth major surface of the substrate, but also when the element is mounted directly on the fourth major surface of the substrate. Of the space on the side of the main surface and the space on the side of the fourth main surface, the case where the element is arranged in the space on the side of the fourth main surface is included. In other words, "the element is arranged on the fourth main surface of the substrate" includes the case where the element is mounted on the fourth main surface of the substrate via other circuit elements, electrodes, or the like. The element is, for example, the third electronic component 6 , but is not limited to the third electronic component 6 . The board is, for example, the second mounting board 3 . When the substrate is the second mounting substrate 3 , the third main surface is the third main surface 31 and the fourth main surface is the fourth main surface 32 .
　本明細書において、「要素は、基板の第２主面上に位置している」は、要素が基板の第２主面上に直接実装されている場合だけでなく、基板で隔された第１主面側の空間及び第２主面側の空間のうち、第２主面側の空間に要素が位置している場合を含む。つまり、「要素は、基板の第２主面上に位置している」は、要素が基板の第２主面から、他の回路素子又は樹脂等を介して隔てられて位置している場合を含む。要素は、例えば、第２実装基板３であるが、第２実装基板３に限定されない。基板は、例えば、第１実装基板２である。基板が第１実装基板２である場合、第１主面は第１主面２１であり、第２主面は第２主面２２である。 In this specification, "the element is located on the second major surface of the substrate" means not only when the element is mounted directly on the second major surface of the substrate, but also when the element is mounted on the second major surface of the substrate. This includes the case where the element is located in the space on the side of the second principal surface, out of the space on the side of the first principal surface and the space on the side of the second principal surface. In other words, "the element is located on the second main surface of the substrate" means that the element is located separated from the second main surface of the substrate via another circuit element, resin, or the like. include. The element is, for example, the second mounting board 3 , but is not limited to the second mounting board 3 . The board is, for example, the first mounting board 2 . When the substrate is the first mounting substrate 2 , the first major surface is the first major surface 21 and the second major surface is the second major surface 22 .
　本明細書において、「要素は、基板の第２主面上に配置されている」は、要素が基板の第２主面上に直接実装されている場合だけでなく、基板で隔された第１主面側の空間及び第２主面側の空間のうち、第２主面側の空間に要素が配置されている場合を含む。つまり、「要素は、基板の第２主面上に配置されている」は、要素が基板の第２主面から、他の回路素子又は樹脂等を介して隔てられて配置されている場合を含む。要素は、例えば、第２電子部品５、第３電子部品６であるが、第２電子部品５、第３電子部品６に限定されない。基板は、例えば、第１実装基板２である。基板が第１実装基板２である場合、第１主面は第１主面２１であり、第２主面は第２主面２２である。 In this specification, "the element is arranged on the second major surface of the substrate" means not only when the element is mounted directly on the second major surface of the substrate, but also when the element is mounted on the second major surface of the substrate. This includes the case where the element is arranged in the space on the side of the second principal surface, out of the space on the side of the first principal surface and the space on the side of the second principal surface. In other words, "the element is arranged on the second main surface of the substrate" means that the element is separated from the second main surface of the substrate via another circuit element, resin, or the like. include. Elements are, for example, the second electronic component 5 and the third electronic component 6 , but are not limited to the second electronic component 5 and the third electronic component 6 . The board is, for example, the first mounting board 2 . When the substrate is the first mounting substrate 2 , the first major surface is the first major surface 21 and the second major surface is the second major surface 22 .
　（態様）
　本明細書には、以下の態様が開示されている。 (mode)
The following aspects are disclosed in this specification.
　第１の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）は、第１実装基板（２）と、第１電子部品（４）と、第２電子部品（５；５ａ）及び第３電子部品（６：６ａ）と、外部接続端子（１０）と、第２実装基板（３）と、を備える。第１実装基板（２）は、互いに対向する第１主面（２１）及び第２主面（２２）を有する。第１電子部品（４）は、第１実装基板（２）の第１主面（２１）に配置されている。第２電子部品（５；５ａ）及び第３電子部品（６；６ａ）は、第１実装基板（２）の第２主面（２２）上に配置されている。外部接続端子（１０）は、第１実装基板（２）の第２主面（２２）に配置されている。第２実装基板（３）は、第１実装基板（２）の第２主面（２２）上に位置している。第２実装基板（３）は、第３主面（３１）と、第４主面（３２）と、を有する。第３主面（３１）は、第１実装基板（２）の第２主面（２２）に対向する。第４主面（３２）は、第３主面（３１）に対向する。第２電子部品（５；５ａ）は、第２実装基板（３）の第３主面（３１）に配置されている。第３電子部品（６；６ａ）は、第２実装基板（３）の第４主面（３２）に配置されている。 A high-frequency module (1; 1a; 1b; 1c) according to a first aspect includes a first mounting board (2), a first electronic component (4), a second electronic component (5; 5a) and a third electronic component. It comprises components (6:6a), external connection terminals (10), and a second mounting board (3). The first mounting board (2) has a first main surface (21) and a second main surface (22) facing each other. The first electronic component (4) is arranged on the first main surface (21) of the first mounting board (2). The second electronic component (5; 5a) and the third electronic component (6; 6a) are arranged on the second main surface (22) of the first mounting board (2). The external connection terminals (10) are arranged on the second main surface (22) of the first mounting board (2). The second mounting board (3) is located on the second main surface (22) of the first mounting board (2). The second mounting board (3) has a third main surface (31) and a fourth main surface (32). The third main surface (31) faces the second main surface (22) of the first mounting board (2). The fourth main surface (32) faces the third main surface (31). The second electronic component (5; 5a) is arranged on the third main surface (31) of the second mounting board (3). The third electronic component (6; 6a) is arranged on the fourth main surface (32) of the second mounting board (3).
　この態様によれば、第１実装基板（２）と第２実装基板（３）のそれぞれの両主面に電子部品が配置されているため、高周波モジュール（１；１ａ；１ｂ；１ｃ）の小型化を図ることができる。 According to this aspect, since the electronic components are arranged on both main surfaces of the first mounting board (2) and the second mounting board (3), the size of the high frequency module (1; 1a; 1b; 1c) is reduced. can be improved.
　第２の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）では、第１の態様において、第２実装基板（３）は、第３主面（３１）と第４主面（３２）との間を貫通し第２電子部品（５；５ａ）と第３電子部品（６；６ａ）とを接続する導電部を有する。 In the high-frequency module (1; 1a; 1b; 1c) according to the second aspect, in the first aspect, the second mounting board (3) has a third main surface (31) and a fourth main surface (32). It has a conductive part that penetrates between and connects the second electronic component (5; 5a) and the third electronic component (6; 6a).
　この態様によれば、第２電子部品（５；５ａ）と第３電子部品（６；６ａ）との間の配線距離を短くでき、高周波モジュール（１；１ａ；１ｂ；１ｃ）の電気特性を改善することができる。 According to this aspect, the wiring distance between the second electronic component (5; 5a) and the third electronic component (6; 6a) can be shortened, and the electrical characteristics of the high-frequency module (1; 1a; 1b; 1c) can be improved. can be improved.
　第３の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）では、第１又は第２の態様において、第１実装基板（２）の厚さ方向（Ｄ１）からの平面視において、第１電子部品（４）の面積は、第２電子部品（５；５ａ）の面積と、第３電子部品（６；６ａ）の面積とのいずれよりも大きい。 In the high-frequency module (1; 1a; 1b; 1c) according to the third aspect, in the first or second aspect, in a plan view from the thickness direction (D1) of the first mounting board (2), the first The area of the electronic component (4) is larger than both the area of the second electronic component (5; 5a) and the area of the third electronic component (6; 6a).
　この態様によれば、第１実装基板（２）の厚さ方向（Ｄ１）からの平面視において、第１電子部品（４）は、第２電子部品（５；５ａ）と、第３電子部品（６；６ａ）と、外部接続端子（１０）とのいずれか１以上と重複する配置とすることができる。したがって、第１電子部品（４）を第１実装基板（２）の第２主面（２２）に配置する場合よりも、第１実装基板（２）の厚さ方向（Ｄ１）からの平面視における高周波モジュール（１；１ａ；１ｂ；１ｃ）の面積を小さくすることができる。つまり、高周波モジュール（１；１ａ；１ｂ；１ｃ）の更なる小型化を図ることができる。 According to this aspect, in plan view from the thickness direction (D1) of the first mounting board (2), the first electronic component (4) includes the second electronic component (5; 5a) and the third electronic component. (6; 6a) and any one or more of the external connection terminals (10) may overlap. Therefore, the plane view from the thickness direction (D1) of the first mounting board (2) is more than the case where the first electronic component (4) is arranged on the second main surface (22) of the first mounting board (2). can reduce the area of the high frequency module (1; 1a; 1b; 1c). That is, it is possible to further reduce the size of the high frequency module (1; 1a; 1b; 1c).
　第４の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）は、第１～第３の態様のいずれか１つにおいて、第４電子部品（７）、を更に備える。第４電子部品（７）は、第１実装基板（２）の第２主面（２２）に配置されている。第１実装基板（２）の厚さ方向（Ｄ１）において、第１実装基板（２）の第２主面（２２）から第４電子部品（７）における第１実装基板（２）側とは反対側の主面までの距離は、第１実装基板（２）の第２主面（２２）から第２実装基板（３）の第４主面（３２）までの距離より大きく、かつ、第１実装基板（２）の第２主面（２２）から第３電子部品（６）における第２実装基板（３）側とは反対側の主面（６１）までの距離より小さい。 A high-frequency module (1; 1a; 1b; 1c) according to a fourth aspect further includes a fourth electronic component (7) in any one of the first to third aspects. The fourth electronic component (7) is arranged on the second main surface (22) of the first mounting board (2). In the thickness direction (D1) of the first mounting board (2), from the second main surface (22) of the first mounting board (2) to the first mounting board (2) side of the fourth electronic component (7) The distance to the opposite principal surface is greater than the distance from the second principal surface (22) of the first mounting substrate (2) to the fourth principal surface (32) of the second mounting substrate (3), and It is smaller than the distance from the second main surface (22) of the first mounting board (2) to the main surface (61) of the third electronic component (6) opposite to the second mounting board (3) side.
　この態様によれば、第４電子部品（７）として高背部品を使用しても高周波モジュール（１；１ａ；１ｂ；１ｃ）の高さの上昇を抑止することができる。したがって、第４電子部品（７）として高背部品を使用したとしても、高周波モジュール（１；１ａ；１ｂ；１ｃ）の小型化を図ることができる。 According to this aspect, even if a tall component is used as the fourth electronic component (7), an increase in height of the high frequency module (1; 1a; 1b; 1c) can be suppressed. Therefore, even if a tall component is used as the fourth electronic component (7), the miniaturization of the high-frequency module (1; 1a; 1b; 1c) can be achieved.
　第５の態様に係る高周波モジュール（１ｃ）では、第４の態様において、外部接続端子（１０）である第１外部接続端子（１０）とは異なる第２外部接続端子（１０ａ）、を更に備える。第２外部接続端子（１０ａ）は、第１実装基板（２）の第２主面（２２）に配置されており、第４電子部品（７）と第２実装基板（３）との間に位置する。 A high-frequency module (1c) according to a fifth aspect, in the fourth aspect, further comprises a second external connection terminal (10a) different from the first external connection terminal (10) which is the external connection terminal (10). . The second external connection terminal (10a) is arranged on the second main surface (22) of the first mounting board (2) and between the fourth electronic component (7) and the second mounting board (3). To position.
　この態様によれば、第２実装基板（３）及び第２実装基板（３）に配置されている第２電子部品（５）、第３電子部品（６）と、第４電子部品（７）との磁気結合を第２外部接続端子（１０ａ）によって抑止することができる。したがって、高周波モジュール（１ｃ）における信号劣化を抑止することができる。 According to this aspect, the second electronic component (5), the third electronic component (6), and the fourth electronic component (7) arranged on the second mounting board (3) and the second mounting board (3) can be suppressed by the second external connection terminal (10a). Therefore, signal deterioration in the high frequency module (1c) can be suppressed.
　第６の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）では、第４又は第５の態様において、第１実装基板（２）の第２主面（２２）と第２実装基板（３）との間に配置されている内部接続端子（２０）を更に備える。 In the high-frequency module (1; 1a; 1b; 1c) according to the sixth aspect, in the fourth or fifth aspect, the second main surface (22) of the first mounting board (2) and the second mounting board (3 ) and an internal connection terminal (20) disposed between the .
　この態様によれば、第１実装基板（２）と第２実装基板（３）との間の電気的な接続を容易に行うことができる。 According to this aspect, electrical connection between the first mounting board (2) and the second mounting board (3) can be easily made.
　第７の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）では、第１～第６の態様のいずれか１つにおいて、第１電子部品（４）はＩＣ部品であり、第２電子部品（５；５ａ）と、第３電子部品（６；６ａ）とは、いずれもＩＣ部品以外の部品である。 In the high-frequency module (1; 1a; 1b; 1c) according to the seventh aspect, in any one of the first to sixth aspects, the first electronic component (4) is an IC component, and the second electronic component (5; 5a) and the third electronic component (6; 6a) are both components other than IC components.
　この態様によれば、第１電子部品（４）に複数の電気的機能を収納できる。また、複数のＩＣ部品を有する高周波モジュールに比べて、配線距離を短くできるため、高周波モジュール（１；１ａ；１ｂ；１ｃ）の特性を向上させることができる。 According to this aspect, a plurality of electrical functions can be accommodated in the first electronic component (4). Moreover, since the wiring distance can be shortened compared to a high frequency module having a plurality of IC parts, the characteristics of the high frequency module (1; 1a; 1b; 1c) can be improved.
　第８の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）では、第１～第７の態様のいずれか１つにおいて、第１実装基板（２）の第１主面（２１）には、第１電子部品（４）のみが配置されている。 In the high-frequency module (1; 1a; 1b; 1c) according to the eighth aspect, in any one of the first to seventh aspects, the first main surface (21) of the first mounting substrate (2) has , only the first electronic component (4) is arranged.
　この態様によれば、第１電子部品（４）以外の電子部品が第１実装基板（２）の第１主面（２１）以外に配置されているため、第１実装基板（２）の厚さ方向（Ｄ１）からの平面視における第１実装基板（２）の面積を小さくすることができる。したがって、高周波モジュール（１；１ａ；１ｂ；１ｃ）の更なる小型化を図ることができる。 According to this aspect, since the electronic components other than the first electronic component (4) are arranged on the surface other than the first main surface (21) of the first mounting board (2), the thickness of the first mounting board (2) It is possible to reduce the area of the first mounting board (2) in plan view from the vertical direction (D1). Therefore, further miniaturization of the high-frequency module (1; 1a; 1b; 1c) can be achieved.
　第９の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）は、第１～第８の態様のいずれか１つにおいて、第２電子部品（５；５ａ）と第３電子部品（６；６ａ）と外部接続端子（１０）との少なくとも一部を覆う樹脂層（８１，８２；８ａ）を更に備える。 A high-frequency module (1; 1a; 1b; 1c) according to a ninth aspect is the second electronic component (5; 5a) and the third electronic component (6; 6a) and a resin layer (81, 82; 8a) covering at least a part of the external connection terminal (10).
　この態様によれば、高周波モジュール（１；１ａ；１ｂ；１ｃ）の信頼性を向上することができる。 According to this aspect, the reliability of the high frequency module (1; 1a; 1b; 1c) can be improved.
　第１０の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）は、第１～第９の態様のいずれか１つにおいて、金属電極層（９）を更に備える。金属電極層（９）は、第１電子部品（４）における第１実装基板（２）側とは反対側の主面（４１）の少なくとも一部と、第１実装基板（２）の外周面（２３）の少なくとも一部とを覆う。 The high-frequency module (1; 1a; 1b; 1c) according to the tenth aspect further comprises a metal electrode layer (9) in any one of the first to ninth aspects. The metal electrode layer (9) is formed on at least a part of the main surface (41) of the first electronic component (4) opposite to the first mounting board (2) and the outer peripheral surface of the first mounting board (2). (23) at least partially.
　この態様によれば、高周波モジュール（１；１ａ；１ｂ；１ｃ）のシールド性を向上することができる。 According to this aspect, the shielding properties of the high-frequency module (1; 1a; 1b; 1c) can be improved.
　第１１の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）では、第１～第１０の態様のいずれか１つにおいて、第３電子部品（６；６ａ）は、第２実装基板（３）とは反対側の主面である第５主面（６１）を有する。第３電子部品（６；６ａ）の第５主面（６１）は、露出している。 In the high-frequency module (1; 1a; 1b; 1c) according to the eleventh aspect, in any one of the first to tenth aspects, the third electronic component (6; 6a) includes the second mounting board (3 ) and has a fifth main surface (61) which is the opposite main surface. The fifth main surface (61) of the third electronic component (6; 6a) is exposed.
　この態様によれば、第１実装基板（２）の厚さ方向（Ｄ１）における高周波モジュール（１；１ａ；１ｂ；１ｃ）の第１実装基板（２）の第２主面（２２）側の端部と第２実装基板（３）との距離を小さくすることができ、高周波モジュール（１；１ａ；１ｂ；１ｃ）を低背化することができる。 According to this aspect, the second main surface (22) side of the first mounting board (2) of the high frequency module (1; 1a; 1b; 1c) in the thickness direction (D1) of the first mounting board (2) The distance between the end portion and the second mounting board (3) can be reduced, and the height of the high frequency module (1; 1a; 1b; 1c) can be reduced.
　第１２の態様に係る高周波モジュール（１；１ａ；１ｂ；１ｃ）では、第１～１１の態様のいずれか１つにおいて、第１実装基板（２）は多層基板である。第２実装基板（３）の厚さ（Ｗ２）は、第１実装基板（２）の厚さ（Ｗ１）より薄い。 In the high-frequency module (1; 1a; 1b; 1c) according to the twelfth aspect, in any one of the first to eleventh aspects, the first mounting substrate (2) is a multilayer substrate. The thickness (W2) of the second mounting board (3) is thinner than the thickness (W1) of the first mounting board (2).
　この態様によれば、配線の多い第１実装基板（２）を多層基板とすることで基板面積を小さくするとともに、第１実装基板（２）より接続配線が少ない第２実装基板（３）の積層数を削減して薄膜化することにより、高周波モジュール（１；１ａ；１ｂ；１ｃ）全体を低背化することができる。 According to this aspect, by making the first mounting board (2) with many wirings a multilayer board, the board area can be reduced, and the second mounting board (3) with fewer connection wirings than the first mounting board (2) can be used. By reducing the number of laminations and thinning, it is possible to reduce the overall height of the high frequency module (1; 1a; 1b; 1c).
　第１３の態様に係る高周波モジュール（１ｂ）では、第１～第１２の態様のいずれか１つにおいて、第２電子部品（５ａ）はフィルタ（１３１～１３３）である。第３電子部品（６ａ）は、第２電子部品（５ａ）に接続されている整合回路（１２１～１２３）の構成部品である。 In the high-frequency module (1b) according to the thirteenth aspect, in any one of the first to twelfth aspects, the second electronic component (5a) is a filter (131-133). The third electronic component (6a) is a component of the matching circuit (121-123) connected to the second electronic component (5a).
　この態様によれば、フィルタ（１３１～１３３）と整合回路（１２１～１２３）とを第２実装基板（３）を介して接続できる。したがって、フィルタ（１３１～１３３）と整合回路（１２１～１２３）との間の配線長を短くでき、高周波モジュール（１ｂ）の電気特性を向上することができる。 According to this aspect, the filters (131-133) and the matching circuits (121-123) can be connected via the second mounting board (3). Therefore, the wiring length between the filters (131-133) and the matching circuits (121-123) can be shortened, and the electrical characteristics of the high frequency module (1b) can be improved.
　第１４の態様に係る高周波モジュール（１；１ａ；１ｃ）では、第１～第１２の態様のいずれか１つにおいて、第３電子部品（６）はフィルタ（１３１～１３３）である。第２電子部品（５）は、第３電子部品（６）に接続されている整合回路（１２１～１２３）の構成部品である。 In the high-frequency module (1; 1a; 1c) according to the fourteenth aspect, in any one of the first to twelfth aspects, the third electronic component (6) is a filter (131-133). The second electronic component (5) is a component of a matching circuit (121-123) connected to the third electronic component (6).
　この態様によれば、フィルタ（１３１～１３３）と整合回路（１２１～１２３）とを第２実装基板（３）を介して接続できる。したがって、フィルタ（１３１～１３３）と整合回路（１２１～１２３）との間の配線長を短くでき、高周波モジュール（１；１ａ；１ｃ）の電気特性を向上することができる。 According to this aspect, the filters (131-133) and the matching circuits (121-123) can be connected via the second mounting board (3). Therefore, the wiring length between the filters (131-133) and the matching circuits (121-123) can be shortened, and the electrical characteristics of the high frequency modules (1; 1a; 1c) can be improved.
　第１５の態様に係る高周波モジュール（１；１ａ；１ｃ）では、第１４の態様において、第３電子部品（６）は、弾性波フィルタである。 In the high-frequency module (1; 1a; 1c) according to the fifteenth aspect, in the fourteenth aspect, the third electronic component (6) is an elastic wave filter.
　この態様によれば、弾性波フィルタの基板として例えばシリコンのような削りやすい材料を用いることによって、第３電子部品（６）の低背化が容易であるため、高周波モジュール（１；１ａ；１ｃ）の低背化が容易となる。 According to this aspect, since the third electronic component (6) can be easily reduced in height by using an easy-to-cut material such as silicon as the substrate of the acoustic wave filter, the high-frequency module (1; 1a; 1c) ) can be easily reduced in height.
　第１６の態様に係る通信装置（９０）は、第１～第１５の態様のいずれか１つの高周波モジュール（１；１ａ；１ｂ；１ｃ）と、信号処理回路（９３）と、を備える。信号処理回路（９３）は、高周波モジュール（１；１ａ；１ｂ；１ｃ）に接続されている。 A communication device (90) according to a sixteenth aspect comprises a high-frequency module (1; 1a; 1b; 1c) according to any one of the first to fifteenth aspects and a signal processing circuit (93). A signal processing circuit (93) is connected to the high frequency modules (1; 1a; 1b; 1c).
　この態様によれば、高周波モジュール（１；１ａ；１ｂ；１ｃ）において第１実装基板（２）と第２実装基板（３）のそれぞれの両主面に電子部品が配置されているため、高周波モジュール（１；１ａ；１ｂ；１ｃ）の小型化を図ることができる。 According to this aspect, in the high-frequency module (1; 1a; 1b; 1c), the electronic components are arranged on both main surfaces of the first mounting board (2) and the second mounting board (3). Miniaturization of the module (1; 1a; 1b; 1c) can be achieved.
　１，１ａ，１ｂ，１ｃ　高周波モジュール
　２　第１実装基板
　２１　第１主面
　２２　第２主面
　２３　外周面
　３　第２実装基板
　３１　第３主面
　３２　第４主面
　４　第１電子部品
　４１　主面
　４２　外周面
　５，５ａ　第２電子部品
　６，６ａ　第３電子部品
　６１　第５主面
　７　第４電子部品
　８１　第１樹脂層
　８１１　主面
　８１２　外周面
　８２　第２樹脂層
　８２１　主面
　８２２　外周面
　８ａ　樹脂層
　８１ａ　主面
　８２ａ　外周面
　９　金属電極層
　１０　外部接続端子（第１外部接続端子）
　１０ａ　第２外部接続端子
　１０１　アンテナ端子
　１０２　信号出力端子
　２０　内部接続端子
　１１　第１スイッチ
　１１１　共通端子
　１１２，１１３，１１４　選択端子
　１２１，１２２，１２３　整合回路
　１３１，１３２，１３３　フィルタ（受信フィルタ）
　１４１，１４２，１４３　送信フィルタ
　１５　第２スイッチ
　１５１，１５２，１５３　選択端子
　１５４　共通端子
　１６１　ローノイズアンプ
　１６２　インダクタ
　１７　第３スイッチ
　１７１，１７２，１７３　選択端子
　１７４　第１共通端子
　１７５　第２共通端子
　１８１，１８２　出力整合回路
　１９１，１９２　パワーアンプ
　２０１，２０２　第４スイッチ
　２０３，２０６　共通端子
　２０４，２０５，２０７，２０８　選択端子
　２１０　コントローラ
　９１　アンテナ
　９２　アンテナ整合回路
　９３　信号処理回路
　９３１　ＲＦ信号処理回路
　９３２　ベースバンド信号処理回路
　９０　通信装置
　Ｄ１　第１方向（厚さ方向）
　Ｄ２　第２方向
　Ｄ３　第３方向 Reference Signs List 1, 1a, 1b, 1c high frequency module 2 first mounting substrate 21 first main surface 22 second main surface 23 outer peripheral surface 3 second mounting substrate 31 third main surface 32 fourth main surface 4 first electronic component 41 main surface 42 outer peripheral surface 5, 5a second electronic component 6, 6a third electronic component 61 fifth main surface 7 fourth electronic component 81 first resin layer 811 main surface 812 outer peripheral surface 82 second resin layer 821 main surface 822 outer peripheral surface 8a Resin layer 81a main surface 82a outer peripheral surface 9 metal electrode layer 10 external connection terminal (first external connection terminal)
10a second external connection terminal 101 antenna terminal 102 signal output terminal 20 internal connection terminal 11 first switch 111 common terminal 112, 113, 114 selection terminal 121, 122, 123 matching circuit 131, 132, 133 filter (receiving filter)
141, 142, 143 transmission filter 15 second switch 151, 152, 153 selection terminal 154 common terminal 161 low noise amplifier 162 inductor 17 third switch 171, 172, 173 selection terminal 174 first common terminal 175 second common terminal 181, 182 Output matching circuit 191, 192 power amplifier 201, 202 fourth switch 203, 206 common terminal 204, 205, 207, 208 selection terminal 210 controller 91 antenna 92 antenna matching circuit 93 signal processing circuit 931 RF signal processing circuit 932 baseband signal processing Circuit 90 Communication device D1 First direction (thickness direction)
D2 Second direction D3 Third direction

Claims (16)

  1. 　互いに対向する第１主面及び第２主面を有する第１実装基板と、
    　前記第１実装基板の前記第１主面に配置されている第１電子部品と、
    　前記第１実装基板の前記第２主面上に配置されている第２電子部品及び第３電子部品と、
    　前記第１実装基板の前記第２主面に配置されている外部接続端子と、
    　前記第１実装基板の前記第２主面上に位置している第２実装基板と、を備え、
    　前記第２実装基板は、
    　　前記第１実装基板の前記第２主面に対向する第３主面と、
    　　前記第３主面に対向する第４主面と、を有し、
    　前記第２電子部品は、前記第２実装基板の前記第３主面に配置されており、
    　前記第３電子部品は、前記第２実装基板の前記第４主面に配置されている、
    　高周波モジュール。     a first mounting substrate having a first main surface and a second main surface facing each other;
    a first electronic component arranged on the first main surface of the first mounting substrate;
    a second electronic component and a third electronic component arranged on the second main surface of the first mounting substrate;
    external connection terminals arranged on the second main surface of the first mounting substrate;
    a second mounting board positioned on the second main surface of the first mounting board;
    The second mounting board,
    a third main surface facing the second main surface of the first mounting substrate;
    and a fourth main surface facing the third main surface,
    The second electronic component is arranged on the third main surface of the second mounting board,
    The third electronic component is arranged on the fourth main surface of the second mounting substrate,
    high frequency module.
  2. 　前記第２実装基板は、前記第３主面と前記第４主面との間を貫通し前記第２電子部品と前記第３電子部品とを接続する導電部を有する、
    　請求項１に記載の高周波モジュール。     The second mounting board has a conductive part that penetrates between the third main surface and the fourth main surface and connects the second electronic component and the third electronic component,
    The high frequency module according to claim 1.
  3. 　前記第１実装基板の厚さ方向からの平面視において、前記第１電子部品の面積は、前記第２電子部品の面積と、前記第３電子部品の面積と、のいずれよりも大きい、
    　請求項１又は２に記載の高周波モジュール。     In plan view from the thickness direction of the first mounting board, the area of the first electronic component is larger than the area of the second electronic component and the area of the third electronic component,
    The high frequency module according to claim 1 or 2.
  4. 　前記第１実装基板の前記第２主面に配置されている第４電子部品、を更に備え、
    　前記第１実装基板の厚さ方向において、前記第１実装基板の前記第２主面から前記第４電子部品における前記第１実装基板側とは反対側の主面までの距離は、前記第１実装基板の前記第２主面から前記第２実装基板の前記第４主面までの距離より大きく、かつ、前記第１実装基板の前記第２主面から前記第３電子部品における前記第２実装基板側とは反対側の主面までの距離より小さい、
    　請求項１から３のいずれか１項に記載の高周波モジュール。     further comprising a fourth electronic component arranged on the second main surface of the first mounting substrate;
    In the thickness direction of the first mounting board, the distance from the second main surface of the first mounting board to the main surface of the fourth electronic component opposite to the first mounting board is the first The second mounting on the third electronic component is larger than the distance from the second main surface of the mounting board to the fourth main surface of the second mounting board, and the second mounting is from the second main surface of the first mounting board to the fourth main surface of the second mounting board. less than the distance to the main surface on the side opposite to the substrate side,
    The high frequency module according to any one of claims 1 to 3.
  5. 　前記外部接続端子である第１外部接続端子とは異なる第２外部接続端子、を更に備え、
    　前記第２外部接続端子は、
    　　前記第１実装基板の前記第２主面に配置されており、
    　　前記第４電子部品と前記第２実装基板との間に位置する、
    　請求項４に記載の高周波モジュール。     further comprising a second external connection terminal different from the first external connection terminal, which is the external connection terminal;
    The second external connection terminal is
    arranged on the second main surface of the first mounting substrate,
    Located between the fourth electronic component and the second mounting substrate,
    The high frequency module according to claim 4.
  6. 　前記第１実装基板の前記第２主面と前記第２実装基板との間に配置されている内部接続端子を更に備える、
    　請求項４又は５に記載の高周波モジュール。     further comprising an internal connection terminal disposed between the second main surface of the first mounting board and the second mounting board;
    The high frequency module according to claim 4 or 5.
  7. 　前記第１電子部品はＩＣ部品であり、
    　前記第２電子部品と、前記第３電子部品とは、いずれもＩＣ部品以外の部品である、
    　請求項１から６のいずれか１項に記載の高周波モジュール。     the first electronic component is an IC component,
    Both the second electronic component and the third electronic component are components other than IC components,
    The high frequency module according to any one of claims 1 to 6.
  8. 　前記第１実装基板の前記第１主面には、前記第１電子部品のみが配置されている、
    　請求項１から７のいずれか１項に記載の高周波モジュール。     Only the first electronic component is arranged on the first main surface of the first mounting substrate,
    The high frequency module according to any one of claims 1 to 7.
  9. 　前記第２電子部品と前記第３電子部品と前記外部接続端子との少なくとも一部を覆う樹脂層を更に備える、
    　請求項１から８のいずれか１項に記載の高周波モジュール。     Further comprising a resin layer covering at least part of the second electronic component, the third electronic component, and the external connection terminal,
    The high frequency module according to any one of claims 1 to 8.
  10. 　前記第１電子部品における前記第１実装基板側とは反対側の主面の少なくとも一部と、前記第１実装基板の外周面の少なくとも一部とを覆う金属電極層を更に備える、
    　請求項１から９のいずれか１項に記載の高周波モジュール。     further comprising a metal electrode layer covering at least a portion of a main surface of the first electronic component opposite to the first mounting substrate and at least a portion of an outer peripheral surface of the first mounting substrate;
    The high frequency module according to any one of claims 1 to 9.
  11. 　前記第３電子部品は、前記第２実装基板とは反対側の主面である第５主面を有し、
    　前記第３電子部品の前記第５主面は、露出している、
    　請求項１から１０のいずれか１項に記載の高周波モジュール。     The third electronic component has a fifth main surface opposite to the second mounting substrate,
    the fifth main surface of the third electronic component is exposed;
    The high frequency module according to any one of claims 1 to 10.
  12. 　前記第１実装基板は多層基板であり、
    　前記第２実装基板の厚さは、前記第１実装基板の厚さより薄い、
    　請求項１から１１のいずれか１項に記載の高周波モジュール。     The first mounting board is a multilayer board,
    The thickness of the second mounting board is thinner than the thickness of the first mounting board,
    The radio frequency module according to any one of claims 1 to 11.
  13. 　前記第２電子部品はフィルタであり、
    　前記第３電子部品は、前記第２電子部品に接続されている整合回路の構成部品である、
    　請求項１から１２のいずれか１項に記載の高周波モジュール。     the second electronic component is a filter;
    The third electronic component is a component of a matching circuit connected to the second electronic component,
    The radio frequency module according to any one of claims 1 to 12.
  14. 　前記第３電子部品はフィルタであり、
    　前記第２電子部品は、前記第３電子部品に接続されている整合回路の構成部品である、
    　請求項１から１２のいずれか１項に記載の高周波モジュール。     the third electronic component is a filter;
    The second electronic component is a component of a matching circuit connected to the third electronic component,
    The radio frequency module according to any one of claims 1 to 12.
  15. 　前記第３電子部品は、弾性波フィルタである、
    　請求項１４に記載の高周波モジュール。     The third electronic component is an acoustic wave filter,
    The high frequency module according to claim 14.
  16. 　請求項１から１５のいずれか１項に記載の高周波モジュールと、
    　前記高周波モジュールに接続されている信号処理回路と、を備える、
    　通信装置。     a high-frequency module according to any one of claims 1 to 15;
    a signal processing circuit connected to the high frequency module;
    Communication device.
PCT/JP2022/033549 2021-09-27 2022-09-07 High frequency module and communication device WO2023047957A1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200083172A1 (en) * 2018-09-07 2020-03-12 Advanced Semiconductor Engineering, Inc. Semiconductor device package
WO2020066380A1 (en) * 2018-09-28 2020-04-02 株式会社村田製作所 Circuit module and communication device
WO2020100849A1 (en) * 2018-11-12 2020-05-22 株式会社村田製作所 Mountable electronic component and electronic circuit module
JP2020102693A (en) * 2018-12-20 2020-07-02 株式会社村田製作所 High frequency module and communication device
JP2020140996A (en) * 2019-02-27 2020-09-03 日産自動車株式会社 Semiconductor device
WO2021124806A1 (en) * 2019-12-20 2021-06-24 株式会社村田製作所 Electronic component module and method for manufacturing electronic component module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200083172A1 (en) * 2018-09-07 2020-03-12 Advanced Semiconductor Engineering, Inc. Semiconductor device package
WO2020066380A1 (en) * 2018-09-28 2020-04-02 株式会社村田製作所 Circuit module and communication device
WO2020100849A1 (en) * 2018-11-12 2020-05-22 株式会社村田製作所 Mountable electronic component and electronic circuit module
JP2020102693A (en) * 2018-12-20 2020-07-02 株式会社村田製作所 High frequency module and communication device
JP2020140996A (en) * 2019-02-27 2020-09-03 日産自動車株式会社 Semiconductor device
WO2021124806A1 (en) * 2019-12-20 2021-06-24 株式会社村田製作所 Electronic component module and method for manufacturing electronic component module

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