WO2022205647A1 - Inductor and tunable filter - Google Patents
Inductor and tunable filter Download PDFInfo
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- WO2022205647A1 WO2022205647A1 PCT/CN2021/103437 CN2021103437W WO2022205647A1 WO 2022205647 A1 WO2022205647 A1 WO 2022205647A1 CN 2021103437 W CN2021103437 W CN 2021103437W WO 2022205647 A1 WO2022205647 A1 WO 2022205647A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
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- the present application relates to the field of wireless communication technologies, for example, to an inductor and a tunable filter.
- High-performance micro-filters can play important roles in multi-band wireless communication systems and wireless transceivers, such as channel selection, dual-power and image-removing spurious filtering.
- the single-frequency filter used in the multi-band receiver cannot meet the needs of selecting multiple frequency bands at the same time, multiple single-frequency filters are usually added in the multi-band receiver to sort different frequency bands, thus increasing the multi-band frequency. Design dimensions of filter circuits in wireless communication systems for receivers.
- tunable filters based on Micro-Electro-Mechanical System (MEMS) technology have gradually attracted widespread attention.
- the filter is composed of a variable reactance element, and the variable reactance element adopts a MEMS varistor as a tuning element, and the tunable range is 10%-15%.
- capacitive MEMS switches are often employed to achieve higher tuning ranges.
- another filter that achieves wide-range discrete frequency tuning is the use of quasi-fractal structure and MEMS contact switch. Since the inductive element of the filter adopts a distributed circuit design, the stop-band suppression of the filter is further improved. functionality is affected.
- the design principle of the filter is to move up or down the frequency response of the filter by adjusting the values of the inductor L and the capacitor C. Therefore, the ideal tunable filter design requires not only variable capacitors, but also variable inductors. However, due to the non-planarity of the transition of the variable capacitor, the variable capacitor cannot be integrated with other circuits and cannot meet the requirements of the millimeter-wave filter for a small-sized planar structure.
- the present application provides an inductor and a tunable filter, which are used to solve the defect of large circuit size when the inductor and capacitor form a filter, so that the filter can meet the requirements of the millimeter wave filter for the inductor of a small-sized planar structure.
- an inductor comprising a MEMS multi-contact switch and a coplanar waveguide transmission structure
- the coplanar waveguide transmission structure includes a central signal line and a plurality of support arms arranged on both sides of the central signal line; along the extending direction of the central signal line, at least a pair of support arms are arranged on at least two straight lines; when the MEMS multi-contact switch is closed , the center signal line and the arms in a pair are connected through a MEMS multi-contact switch.
- a tunable filter including an inductor and a MEMS capacitive switch implementing any of the above;
- FIG. 1 is a schematic structural diagram of an inductor provided by an embodiment of the present application.
- FIG. 2 is a schematic structural diagram of a MEMS multi-contact switch provided by an embodiment of the present application.
- FIG. 3 is a schematic structural diagram of another inductor provided by an embodiment of the present application.
- FIG. 4 is a schematic structural diagram of a tunable filter provided by an embodiment of the present application.
- FIG. 5 is a schematic structural diagram of another tunable filter provided by an embodiment of the present application.
- FIG. 6 is a schematic structural diagram of another tunable filter provided by an embodiment of the present application.
- FIG. 7 is a schematic structural diagram of an equivalent circuit of a tunable filter provided by an embodiment of the present application.
- FIG. 1 is a structural schematic diagram of an inductor provided by an embodiment of the present application.
- the inductor includes a MEMS multi-contact switch 110 and a coplanar waveguide transmission structure 120 ;
- the coplanar waveguide transmission structure 120 includes a central signal line 121 and a plurality of arms 122 disposed on both sides of the central signal line 121 ;
- the central signal line 121 and a plurality of arms 122 are arranged on both sides of the central signal line 121 ;
- the central signal line 121 and a pair of support arms 122 pass through the MEMS multi-contact Switch 110 is connected.
- the MEMS multi-contact switch 110 has the characteristics of being easy to use, small in size and low in loss, and can stably transmit signals from 0 to several hundreds of GHz.
- the coplanar waveguide transmission structure 120 has the characteristics of small size, light weight, and easy integration with other circuits.
- the coplanar waveguide transmission structure 120 is composed of a central signal line 121 and a plurality of arms 122 disposed on both sides of the central signal line 121, and in the direction X1 extending along the central signal line 121, at least two straight lines are formed. At least one pair of support arms 122 are provided on the upper.
- one side of the central signal line 121 is provided with a first support arm 123 and a second support arm 124, and the other side of the central signal line 121 is provided with a third support arm 125 and a fourth support arm 126;
- the extension direction X1 of the line 121, the first support arm 123 and the second support arm 124 are located on a straight line, the third support arm 125 and the fourth support arm 126 are located on a straight line;
- the first support arm 123 is away from the second support arm 124
- One end of the second arm 124 is connected to the center signal line 121, one end of the second arm 124 away from the first arm 123 is connected to the center signal line 121, one end of the third arm 125 away from the fourth arm 126 is connected to the center signal line 121,
- One end of the four arms 126 away from the third arm 125 is connected to the central signal line 121 .
- the coplanar waveguide transmission structure 120 further includes a ground wire 127 .
- the MEMS multi-contact switch 110 when the MEMS multi-contact switch 110 is closed, the MEMS multi-contact switch 110 will bend downward to contact the center signal line 121 and a pair of supporting arms 122 , connecting the central signal line 121 with the supporting arms 122 in the pair, thereby changing the line connection of the coplanar waveguide transmission structure 120 , changing the inductance value of the coplanar waveguide transmission structure 120 , and realizing the independent change of the inductance value.
- the MEMS multi-contact switch 110 when the MEMS multi-contact switch 110 is closed, the MEMS multi-contact switch 110 is used to replace the switches between the arms 122 of the coplanar waveguide transmission structure 120, which reduces the total number of connected switches between the arms 122 and effectively reduces the
- the insertion loss reduces the overall size of the inductor and forms a small-sized planar structure inductor that meets the needs of millimeter-wave filters.
- FIG. 2 is a schematic structural diagram of a MEMS multi-contact switch provided by an embodiment of the application.
- the MEMS multi-contact switch 110 includes a contact sheet 111 , a first driving board 112 and a second driving board 113; the contact piece 111, the first driving board 112 and the second driving board 113 are all provided with holes arranged in an array; along the first direction X2, the contact piece 111 includes a first end and a second end, and the first driving board 112 and the second driving plate 113 are respectively disposed on both sides of the contact piece 111 and are connected with the first end and the second end respectively; the first driving plate 112 and the second driving plate 113 can move toward the contact piece 111 along the first direction X2 ; wherein, the first direction X2 is the row direction of the holes arranged in an array on the contact sheet 111 .
- the MEMS multi-contact switch 110 includes a contact piece 111 , a first driving board 112 and a second driving board 113 .
- the first direction X2 is set as the row direction of the holes arranged in the array on the contact piece 111 .
- the two ends of the contact piece 111 are the first end and the second end respectively, and in this direction, the first drive plate 112 is located at the first end side of the contact piece 111, and the second drive plate 113 is located at the first end side of the contact piece 111.
- the second end side of the contact piece 111 , and the first drive plate 112 is connected to the first end of the contact piece 111
- the second drive plate 113 is connected to the second end of the contact piece 111 .
- the first driving board 112 and the second driving board 113 can move toward the contact piece 111 along the first direction X2.
- the contact piece 111 will be subjected to the pressing force given by the first driving board 112 connected to the first end and the second driving board 113 connected to the second end at the same time, and then the contact piece 111, the first driving board 112 and the second driving board 113 At this moment, different degrees of mechanical deformation will occur.
- the contact piece 111 , the first driving board 112 and the second driving board 113 are all provided with holes arranged in an array, the flexibility of the contact piece 111 , the first driving board 112 and the second driving board 113 can be increased, preventing the contact piece 111 , the first driving plate 112 and the second driving plate 113 are damaged due to mechanical deformation during the pressing movement.
- the MEMS multi-contact switch 110 is closed, the first driving board 112 and the second driving board 113 approach the contact piece 111 along the first direction X2 at the same time, and the first driving board 112 and the contact piece 111 are connected at the first end.
- the contact piece 111 When the second driving board 113 connected to the second end is squeezed at the same time, it will bend in the direction close to the coplanar waveguide transmission structure 120, so that the contact piece 111 contacts the center signal line 121 and the pair of supporting arms 122, and then the center signal The wire 121 and the arms 122 in a pair are connected through the contact piece 111 . Since the contact piece 111 has holes arranged in an array, a plurality of switches can be formed, thereby increasing the number of connection paths for the contact piece 111 to connect the central signal line 121 and the support arms 122 in a pair, that is, the contact piece 111 replaces many switches. The switches between the arms 122 can effectively reduce the insertion loss of the device, so that the overall size of the inductor can be reduced.
- the MEMS multi-contact switch 110 further includes a first support beam 114 and a second support beam 115; along the second direction Y, the contact piece 111 includes a third end and a fourth end, the first support The beam 114 and the second support beam 115 are respectively disposed on both sides of the contact piece 111 ; the first end of the first support beam 114 and the first end of the second support beam 115 are respectively connected with the first drive plate 112 , and the first support beam The second end of 114 and the second end of the second support beam 115 are respectively connected to the second driving board 113 ; wherein, the second direction Y is the column direction of the holes arranged in an array on the contact sheet 111 .
- the MEMS multi-contact switch 110 further includes a first support beam 114 and a second support beam 115 .
- the second direction Y is set as the column direction of the holes arranged in the array on the contact sheet 111, and the two ends of the contact sheet 111 in the second direction Y are the third end and the fourth end respectively, and in the second direction Y
- the first support beam 114 is located on the third end side of the contact piece 111
- the second support beam 115 is located on the fourth end side of the contact piece 111
- the first end of the first support beam 114 and the second support beam 115 The first end of the first support beam 114 and the second end of the second support beam 115 are respectively connected with the second drive plate 113, and then the first support beam 114 and the second
- the support beam 115 can better provide support for the first driving board 112 and the second driving board 113, preventing the first driving board 112 and the second driving board 113 from moving too far along the first direction X2 to the contact piece 111 at the
- FIG. 3 is a schematic structural diagram of another inductor provided by an embodiment of the present application.
- the inductor further includes a substrate 130 ; the coplanar waveguide transmission structure 120 is disposed on the substrate 130 , and the MEMS multi-contact switch 110 is disposed On the side of the coplanar waveguide transmission structure 120 away from the substrate 130 ; along the thickness direction of the substrate 130 , the orthographic projection 140 of the contact piece 111 partially overlaps the central signal line 121 and the arm 122 of the coplanar waveguide transmission structure 120 .
- the substrate 130 may be quartz with a thickness of 520 microns
- the coplanar waveguide transmission structure 120 may be a metal layer with a thickness of 3 microns
- the coplanar waveguide transmission structure 120 is disposed on the substrate 130
- the MEMS multi-contact switch 110 is disposed in a common A side of the surface waveguide transmission structure 120 away from the substrate 130 .
- the orthographic projection 140 of the contact piece 111 of the MEMS multi-contact switch 110 partially overlaps with the central signal line 121 and the support arm 122 of the coplanar waveguide transmission structure 120 , it can be seen that the area of the contact piece 111 is larger than If the first driving plate 112 and the second driving plate 113 approach the contact piece 111 along the first direction X2 at the same time, the contact piece 111 will be squeezed to the side close to the substrate 130 to form a convex shape.
- the protruding part of the contact piece 111 can be in contact with the central signal line 121 and the pair of support arms 122, and the connection relationship of the coplanar waveguide transmission structure 120 is reconstructed, thereby changing the inductance value of the inductance.
- the distance between the supporting arms 122 in the pair is smaller than the length of the contact piece 111 along the first direction X2 .
- the distance between the arms 122 in a pair of the coplanar waveguide transmission structure 120 is smaller than the length of the contact piece 111 along the first direction X2, the distance between the arms 122 in the pair is 20 microns, and the contact piece 111 The length along the first direction X2 is 100 microns.
- the contact piece 111 will be affected by the first driving board 112 connected at the first end and the second driving board connected at the second end The contact piece 111 will protrude toward the direction close to the substrate 130 , so that the contact piece 111 communicates with the pair of support arms 122 . It can be seen that the distance between the support arms 122 in a pair is smaller than the length of the contact piece 111 along the first direction X2, so that the contact piece 111 can be connected to the pair of support arms 122 after the convex deformation.
- the following table shows the dimensions of the coplanar waveguide transmission structure 120 in FIG. 3 .
- FIG. 4 is a schematic structural diagram of a tunable filter provided by an embodiment of the present application.
- the tunable filter includes an inductor 100 and a MEMS capacitive switch 200 that implement any one of the foregoing embodiments;
- the inductor 100 is connected to the MEMS capacitive switch 200 .
- the inductor 100 includes the inductor 100 provided in any embodiment of the present application, and thus has the effect of the inductor 100 provided by the embodiment of the present application, and details are not described herein again.
- the inductor 100 is connected to the MEMS capacitive switch 200.
- the inductance value of the inductor 100 and the capacitive value of the MEMS capacitive switch 200 can be independently changed, thereby making the passband characteristic of the tunable filter.
- the ideal Chebyshev prototype response characteristics are maintained.
- FIG. 5 is a schematic structural diagram of another tunable filter provided by an embodiment of the present application.
- the tunable filter further includes a capacitor 300; the first end of the capacitor 300 is connected to the MEMS capacitive switch 200, and the capacitor 300 The second terminal is grounded.
- the capacitor 300 has the characteristics of storing electricity, discharging and blocking direct traffic.
- the first end of the capacitor 300 is connected to the MEMS capacitive switch 200 , and a bias voltage can be provided to the MEMS capacitive switch 200 .
- the first end of the capacitor 300 is connected to the MEMS capacitive switch 200, and the second end of the capacitor 300 is grounded, which can replace the bias decoupling circuit to introduce the noise generated in the filter circuit into the negative Extreme or ground terminal, and then realize the removal of noise generated in the filter circuit.
- FIG. 6 is a schematic structural diagram of another tunable filter provided by an embodiment of the present application.
- the tunable filter includes an input end A, an output end B, two inductors 100 and three MEMS capacitive switches 200 ; Two inductors 100 are connected in series between the input terminal A and the output terminal B, and the three MEMS capacitive switches 200 are respectively connected to the input terminal A, the output terminal B and the connection point of the two inductors 100 .
- FIG. 7 is a schematic structural diagram of an equivalent circuit of a tunable filter provided by an embodiment of the present application.
- two inductors L are connected in series between the input end A and the output end B, and the MEMS capacitor is connected in series.
- the switch C 1 is connected to the input terminal A
- the MEMS capacitive switch C 2 is connected to the connection point of the two inductors L
- the MEMS capacitive switch C 1 is connected to the output terminal B.
- the tunable filter when the two inductors L are in the "down” state (that is, the closed state), and the MEMS capacitive switch C 1 and the MEMS capacitive switch C 2 are in the “up” state (that is, the open state), the tunable filter is in a "broadband” state. “state, the bandwidth is 57GHz at the moment.
- the tunable filter is in the "narrow band” state , the bandwidth is 19GHz at the moment.
- the inductor When the inductor is in the "down" state (ie, the closed state): the first driving board 112 and the second driving board 113 approach the contact piece 111 along the first direction X2 at the same time, and the contact piece 111 is connected at the first end of the first drive
- the board 112 and the second driving board 113 connected to the second end are squeezed at the same time, the board 112 will bend in the direction close to the coplanar waveguide transmission structure 120, so that the contact piece 111 contacts the center signal line 121 and the pair of supporting arms 122. Furthermore, the central signal line 121 and the pair of supporting arms 122 are connected through the contact piece 111 .
- the following table shows the estimated values of the inductance L, MEMS capacitive switch C 1 and MEMS capacitive switch C 2 in each state of the tunable filter, and the filtering bandwidth of the tunable filter in each state. It can be seen from the table that there is a deviation between the estimated values of the inductance L, MEMS capacitive switch C 1 and MEMS capacitive switch C 2 in the design and testing, which is caused by the slight downward deflection of the bridge of the MEMS, which makes the extracted inductance value within It has a parasitic series resistance of 2.3 ohms in the "broadband” state and 3 ohms in the "narrowband” state.
- the tunable filter may further include a radio frequency choke coil, the first end of the radio frequency choke coil is connected to the input end A of the tunable filter, and the second end of the radio frequency choke coil is grounded.
- the radio frequency choke coil is used to eliminate the coupling component in the input signal provided by the input terminal A.
- the MEMS switch capacitor includes an adjustable membrane bridge capacitor.
- a gap will be formed between the insulating layer of the adjustable membrane bridge capacitor and the metal membrane bridge.
- the insulating layer can not only prevent DC short circuit, but also can be used as a dielectric layer to form a metal injection molding (MIM) capacitor with the upper and lower metal plates.
- MIM metal injection molding
- the adjustable membrane bridge capacitor can change the capacitance value of the adjustable membrane bridge capacitor through the up and down movement of the metal membrane bridge, thereby realizing the independent change of the adjustable filter capacitance value.
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Abstract
Disclosed in the present application are an inductor and a tunable filter. The inductor comprises: a micro-electro-mechanical system (MEMS) multi-contact switch and a coplanar waveguide transmission structure. The coplanar waveguide transmission structure comprises a central signal line, and a plurality of support arms which are arranged on two sides of the central signal line; in a direction extending along the central signal line, at least one pair of support arms are arranged on at least two straight lines; and when the MEMS multi-contact switch is turned on, the central signal line is connected to a pair of support arms via the MEMS multi-contact switch.
Description
本申请要求在2021年03月29日提交中国专利局、申请号为202110335564.0的中国专利申请的优先权,该申请的全部内容通过引用结合在本申请中。This application claims the priority of the Chinese patent application with application number 202110335564.0 filed with the China Patent Office on March 29, 2021, the entire contents of which are incorporated herein by reference.
本申请涉及无线通信技术领域,例如涉及一种电感与可调滤波器。The present application relates to the field of wireless communication technologies, for example, to an inductor and a tunable filter.
高性能微型滤波器可以在多频段的无线通信系统和无线收发器中起到信道选择、双功及镜像消除寄生滤波等重要作用。但是由于多频带接收机中采用的单频滤波器不能同时满足多个频段选择的需求,进而多频带接收机里通常增设多个单频滤波器以分选不同频段,由此加大了多频带接收机的无线通信系统中滤波器电路的设计尺寸。High-performance micro-filters can play important roles in multi-band wireless communication systems and wireless transceivers, such as channel selection, dual-power and image-removing spurious filtering. However, since the single-frequency filter used in the multi-band receiver cannot meet the needs of selecting multiple frequency bands at the same time, multiple single-frequency filters are usually added in the multi-band receiver to sort different frequency bands, thus increasing the multi-band frequency. Design dimensions of filter circuits in wireless communication systems for receivers.
近年来随着微波、毫米波波段的多频无线通信系统的发展,基于微机电系统(Micro-Electro-Mechanical System,MEMS)技术的可调谐滤波器逐渐引起了人们的广泛关注。滤波器采用可变电抗元件构成,可变电抗元件采用MEMS变阻器作为调谐元件,可调谐范围为10%-15%。然而,对于调谐范围较宽的离散频率,通常采用电容式MEMS开关来获得更高的可调谐范围。除此之外,另一种实现宽范围的离散频率调谐的滤波器是采用准分形结构和MEMS触点开关,由于该滤波器的电感元件采用分布式线路设计,进而该滤波器的阻带抑制功能受到影响。In recent years, with the development of multi-frequency wireless communication systems in microwave and millimeter wave bands, tunable filters based on Micro-Electro-Mechanical System (MEMS) technology have gradually attracted widespread attention. The filter is composed of a variable reactance element, and the variable reactance element adopts a MEMS varistor as a tuning element, and the tunable range is 10%-15%. However, for discrete frequencies with wider tuning ranges, capacitive MEMS switches are often employed to achieve higher tuning ranges. In addition, another filter that achieves wide-range discrete frequency tuning is the use of quasi-fractal structure and MEMS contact switch. Since the inductive element of the filter adopts a distributed circuit design, the stop-band suppression of the filter is further improved. functionality is affected.
滤波器的设计原理是通过调整电感L和电容C的值来实现滤波器频率响应的上移或下移,因此,理想的可调谐滤波器设计不仅需要可变电容,还需要可变电感。然而,由于可变电容过渡的非平面性,使可变电容不能与其他电路集成,无法满足毫米波滤波器对小尺寸平面结构的需求。The design principle of the filter is to move up or down the frequency response of the filter by adjusting the values of the inductor L and the capacitor C. Therefore, the ideal tunable filter design requires not only variable capacitors, but also variable inductors. However, due to the non-planarity of the transition of the variable capacitor, the variable capacitor cannot be integrated with other circuits and cannot meet the requirements of the millimeter-wave filter for a small-sized planar structure.
发明内容SUMMARY OF THE INVENTION
本申请提供一种电感与可调滤波器,用以解决电感和电容组成滤波器时电路尺寸大的缺陷,使滤波器可以满足毫米波滤波器对小尺寸平面结构的电感的需求。The present application provides an inductor and a tunable filter, which are used to solve the defect of large circuit size when the inductor and capacitor form a filter, so that the filter can meet the requirements of the millimeter wave filter for the inductor of a small-sized planar structure.
提供了一种电感,包括MEMS多触点开关和共面波导传输结构;Provided is an inductor comprising a MEMS multi-contact switch and a coplanar waveguide transmission structure;
共面波导传输结构包括中心信号线以及设置于中心信号线两侧的多个支 臂;沿中心信号线延伸的方向,至少两条直线上设置至少一对支臂;在MEMS多触点开关闭合时,中心信号线和一对中的支臂通过MEMS多触点开关连接。The coplanar waveguide transmission structure includes a central signal line and a plurality of support arms arranged on both sides of the central signal line; along the extending direction of the central signal line, at least a pair of support arms are arranged on at least two straight lines; when the MEMS multi-contact switch is closed , the center signal line and the arms in a pair are connected through a MEMS multi-contact switch.
还提供了一种可调滤波器,包括实现上述任一项的电感和MEMS电容开关;A tunable filter is also provided, including an inductor and a MEMS capacitive switch implementing any of the above;
电感和MEMS电容开关连接。Inductive and MEMS capacitive switch connections.
图1为本申请实施例提供的一种电感的结构示意图;FIG. 1 is a schematic structural diagram of an inductor provided by an embodiment of the present application;
图2为本申请实施例提供的一种MEMS多触点开关的结构示意图;2 is a schematic structural diagram of a MEMS multi-contact switch provided by an embodiment of the present application;
图3为本申请实施例提供的另一种电感的结构示意图;3 is a schematic structural diagram of another inductor provided by an embodiment of the present application;
图4为本申请实施例提供的一种可调滤波器的结构示意图;4 is a schematic structural diagram of a tunable filter provided by an embodiment of the present application;
图5为本申请实施例提供的另一种可调滤波器的结构示意图;5 is a schematic structural diagram of another tunable filter provided by an embodiment of the present application;
图6为本申请实施例提供的另一种可调滤波器的结构示意图;6 is a schematic structural diagram of another tunable filter provided by an embodiment of the present application;
图7为本申请实施例提供的一种可调滤波器等效电路的结构示意图。FIG. 7 is a schematic structural diagram of an equivalent circuit of a tunable filter provided by an embodiment of the present application.
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行描述,所描述的实施例是本申请一部分实施例,而不是全部的实施例。The technical solutions in the embodiments of the present application will be described below with reference to the accompanying drawings in the embodiments of the present application. The described embodiments are part of the embodiments of the present application, but not all of the embodiments.
本申请实施例提供了一种电感的结构示意图,图1为本申请实施例提供的一种电感的结构示意图。如图1所示,该电感包括MEMS多触点开关110和共面波导传输结构120;共面波导传输结构120包括中心信号线121以及设置于中心信号线121两侧的多个支臂122;沿中心信号线121延伸的方向X1,至少两条直线上设置至少一对支臂122;在MEMS多触点开关110闭合时,中心信号线121和一对中的支臂122通过MEMS多触点开关110连接。An embodiment of the present application provides a schematic structural diagram of an inductor, and FIG. 1 is a structural schematic diagram of an inductor provided by an embodiment of the present application. As shown in FIG. 1 , the inductor includes a MEMS multi-contact switch 110 and a coplanar waveguide transmission structure 120 ; the coplanar waveguide transmission structure 120 includes a central signal line 121 and a plurality of arms 122 disposed on both sides of the central signal line 121 ; Along the extending direction X1 of the central signal line 121, at least a pair of support arms 122 are arranged on at least two straight lines; when the MEMS multi-contact switch 110 is closed, the central signal line 121 and a pair of support arms 122 pass through the MEMS multi-contact Switch 110 is connected.
其中,MEMS多触点开关110具有易于使用、尺寸小、损耗低的特点,可以稳定地传输0至数百GHz的信号。共面波导传输结构120具有体积小、重量轻、便于与其他电路集成的特点。在一实施例中,共面波导传输结构120由中心信号线121以及设置于中心信号线121两侧的多个支臂122组成,并且在沿中心信号线121延伸的方向X1,至少两条直线上设置至少一对支臂122。示例性的,中心信号线121的一侧设置有第一支臂123和第二支臂124,中心信号线121的另一侧设置有第三支臂125和第四支臂126;沿中心信号线121的延伸方 向X1,第一支臂123和第二支臂124位于一条直线上,第三支臂125和第四支臂126位于一条直线上;第一支臂123远离第二支臂124的一端与中心信号线121连接,第二支臂124远离第一支臂123的一端与中心信号线121连接,第三支臂125远离第四支臂126的一端与中心信号线121连接,第四支臂126远离第三支臂125的一端与中心信号线121连接。此外,共面波导传输结构120还包括地线127。本申请通过将MEMS多触点开关110与共面波导传输结构120集成,在MEMS多触点开关110闭合时,MEMS多触点开关110会向下弯曲接触中心信号线121和一对中的支臂122,使中心信号线121和一对中的支臂122连通,从而改变了共面波导传输结构120的线路连接,使共面波导传输结构120的电感值改变,实现电感值的独立变化。由此在MEMS多触点开关110闭合时,采用MEMS多触点开关110代替共面波导传输结构120的支臂122间的开关,减少了支臂122间总的连通开关数目,有效地降低了插入损耗,使得电感的整体尺寸得以减小,构成满足毫米波滤波器需求的小尺寸平面结构电感。Among them, the MEMS multi-contact switch 110 has the characteristics of being easy to use, small in size and low in loss, and can stably transmit signals from 0 to several hundreds of GHz. The coplanar waveguide transmission structure 120 has the characteristics of small size, light weight, and easy integration with other circuits. In one embodiment, the coplanar waveguide transmission structure 120 is composed of a central signal line 121 and a plurality of arms 122 disposed on both sides of the central signal line 121, and in the direction X1 extending along the central signal line 121, at least two straight lines are formed. At least one pair of support arms 122 are provided on the upper. Exemplarily, one side of the central signal line 121 is provided with a first support arm 123 and a second support arm 124, and the other side of the central signal line 121 is provided with a third support arm 125 and a fourth support arm 126; The extension direction X1 of the line 121, the first support arm 123 and the second support arm 124 are located on a straight line, the third support arm 125 and the fourth support arm 126 are located on a straight line; the first support arm 123 is away from the second support arm 124 One end of the second arm 124 is connected to the center signal line 121, one end of the second arm 124 away from the first arm 123 is connected to the center signal line 121, one end of the third arm 125 away from the fourth arm 126 is connected to the center signal line 121, One end of the four arms 126 away from the third arm 125 is connected to the central signal line 121 . In addition, the coplanar waveguide transmission structure 120 further includes a ground wire 127 . In the present application, by integrating the MEMS multi-contact switch 110 with the coplanar waveguide transmission structure 120 , when the MEMS multi-contact switch 110 is closed, the MEMS multi-contact switch 110 will bend downward to contact the center signal line 121 and a pair of supporting arms 122 , connecting the central signal line 121 with the supporting arms 122 in the pair, thereby changing the line connection of the coplanar waveguide transmission structure 120 , changing the inductance value of the coplanar waveguide transmission structure 120 , and realizing the independent change of the inductance value. Therefore, when the MEMS multi-contact switch 110 is closed, the MEMS multi-contact switch 110 is used to replace the switches between the arms 122 of the coplanar waveguide transmission structure 120, which reduces the total number of connected switches between the arms 122 and effectively reduces the The insertion loss reduces the overall size of the inductor and forms a small-sized planar structure inductor that meets the needs of millimeter-wave filters.
图2为本申请实施例提供的一种MEMS多触点开关的结构示意图,如图2所示,可选的,MEMS多触点开关110包括接触片111、第一驱动板112和第二驱动板113;接触片111、第一驱动板112和第二驱动板113均设置有阵列排布的孔;沿第一方向X2,接触片111包括第一端和第二端,第一驱动板112和第二驱动板113分别设置于接触片111的两侧,并分别与第一端和第二端连接;第一驱动板112和第二驱动板113能够沿第一方向X2向接触片111运动;其中,第一方向X2为接触片111上阵列排布的孔的行方向。FIG. 2 is a schematic structural diagram of a MEMS multi-contact switch provided by an embodiment of the application. As shown in FIG. 2 , optionally, the MEMS multi-contact switch 110 includes a contact sheet 111 , a first driving board 112 and a second driving board 113; the contact piece 111, the first driving board 112 and the second driving board 113 are all provided with holes arranged in an array; along the first direction X2, the contact piece 111 includes a first end and a second end, and the first driving board 112 and the second driving plate 113 are respectively disposed on both sides of the contact piece 111 and are connected with the first end and the second end respectively; the first driving plate 112 and the second driving plate 113 can move toward the contact piece 111 along the first direction X2 ; wherein, the first direction X2 is the row direction of the holes arranged in an array on the contact sheet 111 .
其中,MEMS多触点开关110包括接触片111、第一驱动板112和第二驱动板113,在一实施例中,设定第一方向X2为接触片111上阵列排布的孔的行方向,在第一方向X2上接触片111的两端分别为第一端和第二端,并且在该方向上设置第一驱动板112位于接触片111的第一端侧,第二驱动板113位于接触片111的第二端侧,并且第一驱动板112与接触片111的第一端连接,第二驱动板113与接触片111的第二端连接。第一驱动板112和第二驱动板113能够沿第一方向X2向接触片111运动,当第一驱动板112和第二驱动板113同时沿第一方向X2向接触片111靠近时,接触片111会受到第一端连接的第一驱动板112和第二端连接的第二驱动板113的同时给与的挤压力,进而接触片111、第一驱动板112和第二驱动板113在此刻均会发生不同程度的机械形变。由于接触片111、第一驱动板112和第二驱动板113上均设置有阵列排布的孔,可以增加接触片111、第一驱动板112和第二驱动板113的柔韧度,防止接触片111、第一驱动板112和第二驱动板113在挤压运动的过程中由于机械形变受损。此外,当MEMS多触点开关110闭合时,第一驱动板112和第二驱动板113同时沿第一方向X2向接触片111靠近,接触片111在第一端连接的第一驱动板112 和第二端连接的第二驱动板113的同时挤压下,会向靠近共面波导传输结构120的方向弯曲,使接触片111接触中心信号线121和一对中的支臂122,进而中心信号线121和一对中的支臂122通过接触片111实现连接。由于接触片111上具有阵列排布的孔,可以形成多个开关,进而可以增加接触片111连接中心信号线121和一对中的支臂122的连接通路数目,也就是接触片111替代了多个支臂122间的开关,可以有效地降低器件的插入损耗,使电感的整体尺寸得以减小。The MEMS multi-contact switch 110 includes a contact piece 111 , a first driving board 112 and a second driving board 113 . In one embodiment, the first direction X2 is set as the row direction of the holes arranged in the array on the contact piece 111 . , in the first direction X2, the two ends of the contact piece 111 are the first end and the second end respectively, and in this direction, the first drive plate 112 is located at the first end side of the contact piece 111, and the second drive plate 113 is located at the first end side of the contact piece 111. The second end side of the contact piece 111 , and the first drive plate 112 is connected to the first end of the contact piece 111 , and the second drive plate 113 is connected to the second end of the contact piece 111 . The first driving board 112 and the second driving board 113 can move toward the contact piece 111 along the first direction X2. When the first driving board 112 and the second driving board 113 approach the contact piece 111 along the first direction X2 at the same time, the contact piece 111 will be subjected to the pressing force given by the first driving board 112 connected to the first end and the second driving board 113 connected to the second end at the same time, and then the contact piece 111, the first driving board 112 and the second driving board 113 At this moment, different degrees of mechanical deformation will occur. Since the contact piece 111 , the first driving board 112 and the second driving board 113 are all provided with holes arranged in an array, the flexibility of the contact piece 111 , the first driving board 112 and the second driving board 113 can be increased, preventing the contact piece 111 , the first driving plate 112 and the second driving plate 113 are damaged due to mechanical deformation during the pressing movement. In addition, when the MEMS multi-contact switch 110 is closed, the first driving board 112 and the second driving board 113 approach the contact piece 111 along the first direction X2 at the same time, and the first driving board 112 and the contact piece 111 are connected at the first end. When the second driving board 113 connected to the second end is squeezed at the same time, it will bend in the direction close to the coplanar waveguide transmission structure 120, so that the contact piece 111 contacts the center signal line 121 and the pair of supporting arms 122, and then the center signal The wire 121 and the arms 122 in a pair are connected through the contact piece 111 . Since the contact piece 111 has holes arranged in an array, a plurality of switches can be formed, thereby increasing the number of connection paths for the contact piece 111 to connect the central signal line 121 and the support arms 122 in a pair, that is, the contact piece 111 replaces many switches. The switches between the arms 122 can effectively reduce the insertion loss of the device, so that the overall size of the inductor can be reduced.
示例性地,继续参考图2,MEMS多触点开关110还包括第一支撑梁114和第二支撑梁115;沿第二方向Y,接触片111包括第三端和第四端,第一支撑梁114和第二支撑梁115分别设置于接触片111的两侧;第一支撑梁114的第一端和第二支撑梁115的第一端分别与第一驱动板112连接,第一支撑梁114的第二端和第二支撑梁115的第二端分别与第二驱动板113连接;其中,第二方向Y为接触片111上阵列排布的孔的列方向。2, the MEMS multi-contact switch 110 further includes a first support beam 114 and a second support beam 115; along the second direction Y, the contact piece 111 includes a third end and a fourth end, the first support The beam 114 and the second support beam 115 are respectively disposed on both sides of the contact piece 111 ; the first end of the first support beam 114 and the first end of the second support beam 115 are respectively connected with the first drive plate 112 , and the first support beam The second end of 114 and the second end of the second support beam 115 are respectively connected to the second driving board 113 ; wherein, the second direction Y is the column direction of the holes arranged in an array on the contact sheet 111 .
其中,MEMS多触点开关110还包括第一支撑梁114和第二支撑梁115。在一实施例中,设定第二方向Y为接触片111上阵列排布的孔的列方向,在第二方向Y上接触片111的两端分别为第三端和第四端,并且在该方向上设置第一支撑梁114位于接触片111的第三端侧,第二支撑梁115位于接触片111的第四端侧,并且第一支撑梁114的第一端和第二支撑梁115的第一端分别与第一驱动板112连接,第一支撑梁114的第二端和第二支撑梁115的第二端分别与第二驱动板113连接,进而第一支撑梁114和第二支撑梁115可以更好地给第一驱动板112和第二驱动板113提供支撑作用,防止第一驱动板112和第二驱动板113同时沿第一方向X2向接触片111运动的距离过大,导致接触片111、第一驱动板112和第二驱动板113在挤压运动的过程中形变过大而断裂。The MEMS multi-contact switch 110 further includes a first support beam 114 and a second support beam 115 . In one embodiment, the second direction Y is set as the column direction of the holes arranged in the array on the contact sheet 111, and the two ends of the contact sheet 111 in the second direction Y are the third end and the fourth end respectively, and in the second direction Y In this direction, the first support beam 114 is located on the third end side of the contact piece 111 , the second support beam 115 is located on the fourth end side of the contact piece 111 , and the first end of the first support beam 114 and the second support beam 115 The first end of the first support beam 114 and the second end of the second support beam 115 are respectively connected with the second drive plate 113, and then the first support beam 114 and the second The support beam 115 can better provide support for the first driving board 112 and the second driving board 113, preventing the first driving board 112 and the second driving board 113 from moving too far along the first direction X2 to the contact piece 111 at the same time. , causing the contact piece 111 , the first driving plate 112 and the second driving plate 113 to deform too much and break during the extrusion movement.
图3为本申请实施例提供的另一种电感的结构示意图,如图3所示,电感还包括衬底130;共面波导传输结构120设置于衬底130上,MEMS多触点开关110设置于共面波导传输结构120远离衬底130的一侧;沿衬底130的厚度方向,接触片111的正投影140与共面波导传输结构120的中心信号线121及支臂122部分交叠。FIG. 3 is a schematic structural diagram of another inductor provided by an embodiment of the present application. As shown in FIG. 3 , the inductor further includes a substrate 130 ; the coplanar waveguide transmission structure 120 is disposed on the substrate 130 , and the MEMS multi-contact switch 110 is disposed On the side of the coplanar waveguide transmission structure 120 away from the substrate 130 ; along the thickness direction of the substrate 130 , the orthographic projection 140 of the contact piece 111 partially overlaps the central signal line 121 and the arm 122 of the coplanar waveguide transmission structure 120 .
其中,衬底130可以为520微米厚的石英,共面波导传输结构120可以为3微米厚的金属层,共面波导传输结构120设置于衬底130上,MEMS多触点开关110设置于共面波导传输结构120远离衬底130的一侧。沿衬底130的厚度方向,MEMS多触点开关110的接触片111的正投影140与共面波导传输结构120的中心信号线121及支臂122部分交叠,由此可知接触片111的面积大于多对支臂的间隙面积,若第一驱动板112和第二驱动板113同时沿第一方向X2向 接触片111靠近,使接触片111受到挤压向靠近衬底130的一侧发生凸形形变,进而接触片111突出部分可以与中心信号线121及一对支臂122接触,重构共面波导传输结构120的连接关系,进而改变电感的电感值。The substrate 130 may be quartz with a thickness of 520 microns, the coplanar waveguide transmission structure 120 may be a metal layer with a thickness of 3 microns, the coplanar waveguide transmission structure 120 is disposed on the substrate 130, and the MEMS multi-contact switch 110 is disposed in a common A side of the surface waveguide transmission structure 120 away from the substrate 130 . Along the thickness direction of the substrate 130 , the orthographic projection 140 of the contact piece 111 of the MEMS multi-contact switch 110 partially overlaps with the central signal line 121 and the support arm 122 of the coplanar waveguide transmission structure 120 , it can be seen that the area of the contact piece 111 is larger than If the first driving plate 112 and the second driving plate 113 approach the contact piece 111 along the first direction X2 at the same time, the contact piece 111 will be squeezed to the side close to the substrate 130 to form a convex shape. Then, the protruding part of the contact piece 111 can be in contact with the central signal line 121 and the pair of support arms 122, and the connection relationship of the coplanar waveguide transmission structure 120 is reconstructed, thereby changing the inductance value of the inductance.
在一实施例中,继续参考图3一对中的支臂122间的间距小于接触片111沿第一方向X2上的长度。In one embodiment, continuing to refer to FIG. 3 , the distance between the supporting arms 122 in the pair is smaller than the length of the contact piece 111 along the first direction X2 .
示例性地,共面波导传输结构120一对中的支臂122间的间距小于接触片111沿第一方向X2上的长度,一对中的支臂122间的间距为20微米,接触片111沿第一方向X2上的长度为100微米。当第一驱动板112和第二驱动板113同时沿第一方向X2向接触片111靠近时,接触片111会受到第一端连接的第一驱动板112和第二端连接的第二驱动板113的同时给与的挤压力,进而接触片111会向靠近衬底130的方向凸起,使接触片111连通一对支臂122。由此可知,一对中的支臂122间的间距要小于接触片111沿第一方向X2上的长度,便于接触片111发生凸起形变后能够连通一对支臂122而导通。Exemplarily, the distance between the arms 122 in a pair of the coplanar waveguide transmission structure 120 is smaller than the length of the contact piece 111 along the first direction X2, the distance between the arms 122 in the pair is 20 microns, and the contact piece 111 The length along the first direction X2 is 100 microns. When the first driving board 112 and the second driving board 113 approach the contact piece 111 along the first direction X2 at the same time, the contact piece 111 will be affected by the first driving board 112 connected at the first end and the second driving board connected at the second end The contact piece 111 will protrude toward the direction close to the substrate 130 , so that the contact piece 111 communicates with the pair of support arms 122 . It can be seen that the distance between the support arms 122 in a pair is smaller than the length of the contact piece 111 along the first direction X2, so that the contact piece 111 can be connected to the pair of support arms 122 after the convex deformation.
另外,下表为图3中共面波导传输结构120的尺寸。In addition, the following table shows the dimensions of the coplanar waveguide transmission structure 120 in FIG. 3 .
参数parameter | W1W1 | W2W2 | GG | SS | L1L1 | L2L2 | L3L3 |
尺寸umsizeum | 2020 | 3030 | 2020 | 4040 | 2020 | 220220 | 2020 |
图4为本申请实施例提供的一种可调滤波器的结构示意图,如图4所示,该可调滤波器包括实现上述实施例中任一项所述的电感100和MEMS电容开关200;电感100和MEMS电容开关200连接。FIG. 4 is a schematic structural diagram of a tunable filter provided by an embodiment of the present application. As shown in FIG. 4 , the tunable filter includes an inductor 100 and a MEMS capacitive switch 200 that implement any one of the foregoing embodiments; The inductor 100 is connected to the MEMS capacitive switch 200 .
其中,电感100包括本申请任意实施例提供的电感100,因此具有本申请实施例提供的电感100的效果,此处不再赘述。此外,电感100和MEMS电容开关200连接,本申请通过操作电感100和MEMS电容开关200,可以独立改变电感100的电感值和MEMS电容开关200的电容值,进而使可调滤波器的通带特性保持了理想的切比雪夫原型响应特性。The inductor 100 includes the inductor 100 provided in any embodiment of the present application, and thus has the effect of the inductor 100 provided by the embodiment of the present application, and details are not described herein again. In addition, the inductor 100 is connected to the MEMS capacitive switch 200. In the present application, by operating the inductor 100 and the MEMS capacitive switch 200, the inductance value of the inductor 100 and the capacitive value of the MEMS capacitive switch 200 can be independently changed, thereby making the passband characteristic of the tunable filter. The ideal Chebyshev prototype response characteristics are maintained.
图5为本申请实施例提供的另一种可调滤波器的结构示意图,如图5所示,可调滤波器还包括电容器300;电容器300的第一端与MEMS电容开关200连接,电容器300的第二端接地。FIG. 5 is a schematic structural diagram of another tunable filter provided by an embodiment of the present application. As shown in FIG. 5 , the tunable filter further includes a capacitor 300; the first end of the capacitor 300 is connected to the MEMS capacitive switch 200, and the capacitor 300 The second terminal is grounded.
其中,电容器300具有储电、放电以及隔直通交的特性。通过利用电容器300的储电特性,将电容器300的第一端与MEMS电容开关200连接,可以向MEMS电容开关200提供偏置电压。此外,通过利用电容器300隔直通交的特性,将电容器300的第一端与MEMS电容开关200连接,电容器300的第二端接地,可以替代偏置去耦电路将滤波电路中产生的噪声导入负极端或接地端, 进而实现去除滤波电路中产生的噪声。Among them, the capacitor 300 has the characteristics of storing electricity, discharging and blocking direct traffic. By utilizing the power storage characteristic of the capacitor 300 , the first end of the capacitor 300 is connected to the MEMS capacitive switch 200 , and a bias voltage can be provided to the MEMS capacitive switch 200 . In addition, by using the characteristic of the capacitor 300 to block direct traffic, the first end of the capacitor 300 is connected to the MEMS capacitive switch 200, and the second end of the capacitor 300 is grounded, which can replace the bias decoupling circuit to introduce the noise generated in the filter circuit into the negative Extreme or ground terminal, and then realize the removal of noise generated in the filter circuit.
图6为本申请实施例提供的另一种可调滤波器的结构示意图,如图6所示,可调滤波器包括输入端A、输出端B、两个电感100和三个MEMS电容开关200;两个电感100串联在输入端A和输出端B之间,三个MEMS电容开关200分别与输入端A、输出端B和两个电感100的连接点连接。FIG. 6 is a schematic structural diagram of another tunable filter provided by an embodiment of the present application. As shown in FIG. 6 , the tunable filter includes an input end A, an output end B, two inductors 100 and three MEMS capacitive switches 200 ; Two inductors 100 are connected in series between the input terminal A and the output terminal B, and the three MEMS capacitive switches 200 are respectively connected to the input terminal A, the output terminal B and the connection point of the two inductors 100 .
示例性的,图7为本申请实施例提供的一种可调滤波器等效电路的结构示意图,如图7所示,两个电感L串联在输入端A和输出端B之间,MEMS电容开关C
1与输入端A连接、MEMS电容开关C
2与两个电感L的连接点连接,MEMS电容开关C
1与输出端B连接。其中,当两个电感L处于“向下”状态(即闭合状态),MEMS电容开关C
1和MEMS电容开关C
2处于“向上”状态(即打开状态)时,可调滤波器处于“宽频带”状态,此刻宽带为57GHz。当两个电感L处于“向上”状态(即打开状态),MEMS电容开关C
1和MEMS电容开关C
2处于“向下”状态(即闭合状态)时,可调滤波器处于“窄频带”状态,此刻宽带为19GHz。
Exemplarily, FIG. 7 is a schematic structural diagram of an equivalent circuit of a tunable filter provided by an embodiment of the present application. As shown in FIG. 7 , two inductors L are connected in series between the input end A and the output end B, and the MEMS capacitor is connected in series. The switch C 1 is connected to the input terminal A, the MEMS capacitive switch C 2 is connected to the connection point of the two inductors L, and the MEMS capacitive switch C 1 is connected to the output terminal B. Among them, when the two inductors L are in the "down" state (that is, the closed state), and the MEMS capacitive switch C 1 and the MEMS capacitive switch C 2 are in the "up" state (that is, the open state), the tunable filter is in a "broadband" state. "state, the bandwidth is 57GHz at the moment. When the two inductors L are in the "up" state (ie, the open state), and the MEMS capacitive switch C 1 and MEMS capacitive switch C 2 are in the "down" state (ie, the closed state), the tunable filter is in the "narrow band" state , the bandwidth is 19GHz at the moment.
电感在处于“向下”状态(即闭合状态)时:第一驱动板112和第二驱动板113同时沿第一方向X2向接触片111靠近,接触片111在第一端连接的第一驱动板112和第二端连接的第二驱动板113的同时挤压下,会向靠近共面波导传输结构120的方向弯曲,使接触片111接触中心信号线121和一对中的支臂122,进而中心信号线121和一对中的支臂122通过接触片111实现连接。When the inductor is in the "down" state (ie, the closed state): the first driving board 112 and the second driving board 113 approach the contact piece 111 along the first direction X2 at the same time, and the contact piece 111 is connected at the first end of the first drive When the board 112 and the second driving board 113 connected to the second end are squeezed at the same time, the board 112 will bend in the direction close to the coplanar waveguide transmission structure 120, so that the contact piece 111 contacts the center signal line 121 and the pair of supporting arms 122. Furthermore, the central signal line 121 and the pair of supporting arms 122 are connected through the contact piece 111 .
下表为可调滤波器每种状态下的电感L、MEMS电容开关C
1和MEMS电容开关C
2的估计值,可调滤波器在每种状态下的滤波频宽。由表可知,设计中与测试中电感L、MEMS电容开关C
1和MEMS电容开关C
2的估计值有偏差,这是由于微机电系统的桥梁轻微向下偏转造成的,使提取的电感值在“宽频带”状态下具有2.3欧姆的寄生串联电阻,在“窄频带”状态下具有3欧姆的寄生串联电阻。
The following table shows the estimated values of the inductance L, MEMS capacitive switch C 1 and MEMS capacitive switch C 2 in each state of the tunable filter, and the filtering bandwidth of the tunable filter in each state. It can be seen from the table that there is a deviation between the estimated values of the inductance L, MEMS capacitive switch C 1 and MEMS capacitive switch C 2 in the design and testing, which is caused by the slight downward deflection of the bridge of the MEMS, which makes the extracted inductance value within It has a parasitic series resistance of 2.3 ohms in the "broadband" state and 3 ohms in the "narrowband" state.
可调滤波器还可以包括射频扼流圈,射频扼流圈的第一端与可调滤波器的输入端A连接,射频扼流圈的第二端接地。其中,射频扼流圈用于消除所述输入端A提供的输入信号中的耦合分量。The tunable filter may further include a radio frequency choke coil, the first end of the radio frequency choke coil is connected to the input end A of the tunable filter, and the second end of the radio frequency choke coil is grounded. Wherein, the radio frequency choke coil is used to eliminate the coupling component in the input signal provided by the input terminal A.
可选的,MEMS开关电容包括可调膜桥电容。Optionally, the MEMS switch capacitor includes an adjustable membrane bridge capacitor.
可调膜桥电容的绝缘层与金属膜桥之间会形成空隙,当加上电压后,由于金属电桥和中心导线存在异种电荷,从而产生静电引力,使金属膜桥向下移动,与绝缘层贴紧。绝缘层既可防止直流短路,又可以作为介质层,与上下金属板组成金属注射成形(Metal injection Molding,MIM)结构的电容。当外加电压撤去后,金属膜桥恢复原状。可调膜桥电容通过金属膜桥的上下移动,可使可调膜桥电容的电容值发生变化,从而实现可调滤波器电容值的独立改变。A gap will be formed between the insulating layer of the adjustable membrane bridge capacitor and the metal membrane bridge. When the voltage is applied, due to the existence of different charges in the metal bridge and the center wire, electrostatic attraction is generated, which makes the metal membrane bridge move downward, and the insulation Layers fit snugly. The insulating layer can not only prevent DC short circuit, but also can be used as a dielectric layer to form a metal injection molding (MIM) capacitor with the upper and lower metal plates. When the applied voltage is removed, the metal film bridge returns to its original state. The adjustable membrane bridge capacitor can change the capacitance value of the adjustable membrane bridge capacitor through the up and down movement of the metal membrane bridge, thereby realizing the independent change of the adjustable filter capacitance value.
Claims (10)
- 一种电感,包括:微机电系统MEMS多触点开关和共面波导传输结构;An inductor, comprising: a microelectromechanical system MEMS multi-contact switch and a coplanar waveguide transmission structure;所述共面波导传输结构包括中心信号线以及设置于所述中心信号线两侧的多个支臂;沿所述中心信号线延伸的方向,至少两条直线上设置至少一对支臂;在所述MEMS多触点开关闭合的情况下,所述中心信号线和一对中的所述支臂通过所述MEMS多触点开关连接。The coplanar waveguide transmission structure includes a center signal line and a plurality of support arms arranged on both sides of the center signal line; along the extending direction of the center signal line, at least one pair of support arms are arranged on at least two straight lines; When the MEMS multi-contact switch is closed, the central signal line and the support arms in a pair are connected through the MEMS multi-contact switch.
- 根据权利要求1所述的电感,其中,所述MEMS多触点开关包括:接触片、第一驱动板和第二驱动板;The inductor according to claim 1, wherein the MEMS multi-contact switch comprises: a contact piece, a first driving board and a second driving board;所述接触片、所述第一驱动板和所述第二驱动板均设置有阵列排布的孔;沿第一方向,所述接触片包括第一端和第二端,所述第一驱动板和所述第二驱动板分别设置于所述接触片的两侧,并分别与所述第一端和所述第二端连接;所述第一驱动板和所述第二驱动板能够沿所述第一方向向所述接触片运动;The contact piece, the first driving board and the second driving board are all provided with holes arranged in an array; along the first direction, the contact piece includes a first end and a second end, the first driving The board and the second driving board are respectively arranged on both sides of the contact piece, and are respectively connected with the first end and the second end; the first driving board and the second driving board can be along the the first direction moves toward the contact piece;其中,所述第一方向为所述接触片上阵列排布的孔的行方向。Wherein, the first direction is the row direction of the holes arranged in the array on the contact sheet.
- 根据权利要求2所述的电感,其中,所述MEMS多触点开关还包括:第一支撑梁和第二支撑梁;The inductor of claim 2, wherein the MEMS multi-contact switch further comprises: a first support beam and a second support beam;沿第二方向,所述接触片还包括第三端和第四端,所述第一支撑梁和所述第二支撑梁分别设置于所述接触片的两侧;所述第一支撑梁的第一端和所述第二支撑梁的第一端分别与所述第一驱动板连接,所述第一支撑梁的第二端和所述第二支撑梁的第二端分别与所述第二驱动板连接;其中,所述第二方向为所述接触片上阵列排布的孔的列方向。Along the second direction, the contact piece further includes a third end and a fourth end, the first support beam and the second support beam are respectively arranged on both sides of the contact piece; The first end and the first end of the second support beam are respectively connected with the first driving plate, and the second end of the first support beam and the second end of the second support beam are respectively connected with the first drive plate. The two driving boards are connected; wherein, the second direction is the column direction of the holes arranged in the array on the contact sheet.
- 根据权利要求1所述的电感,其中,所述中心信号线的一侧设置有第一支臂和第二支臂,所述中心信号线的另一侧设置有第三支臂和第四支臂;The inductor according to claim 1, wherein one side of the central signal line is provided with a first arm and a second arm, and the other side of the central signal line is provided with a third arm and a fourth arm arm;沿所述中心信号线的延伸方向,所述第一支臂和所述第二支臂位于一条直线上,所述第三支臂和所述第四支臂位于一条直线上;所述第一支臂远离所述第二支臂的一端与所述中心信号线连接,所述第二支臂远离所述第一支臂的一端与所述中心信号线连接,所述第三支臂远离所述第四支臂的一端与所述中心信号线连接,所述第四支臂远离所述第三支臂的一端与所述中心信号线连接。Along the extension direction of the central signal line, the first support arm and the second support arm are located on a straight line, and the third support arm and the fourth support arm are located on a straight line; the first support arm and the fourth support arm are located on a straight line; One end of the arm away from the second arm is connected to the central signal line, one end of the second arm away from the first arm is connected to the central signal line, and the third arm is away from the center signal line. One end of the fourth support arm is connected to the center signal line, and one end of the fourth support arm away from the third support arm is connected to the center signal line.
- 根据权利要求2所述的电感,还包括:衬底;The inductor of claim 2, further comprising: a substrate;所述共面波导传输结构设置于所述衬底上,所述MEMS多触点开关设置于所述共面波导传输结构远离所述衬底的一侧;沿所述衬底的厚度方向,所述接触片的正投影与所述共面波导传输结构的所述中心信号线及所述支臂部分交叠。The coplanar waveguide transmission structure is arranged on the substrate, and the MEMS multi-contact switch is arranged on the side of the coplanar waveguide transmission structure away from the substrate; along the thickness direction of the substrate, the The orthographic projection of the contact piece overlaps with the central signal line and the arm portion of the coplanar waveguide transmission structure.
- 根据权利要求2所述的电感,其中,所述一对中的所述支臂间的间距小 于所述接触片沿所述第一方向上的长度。The inductor of claim 2, wherein the spacing between the arms of the pair is less than the length of the contact piece in the first direction.
- 一种可调滤波器,包括:权利要求1-6中任一项所述的电感和微机电系统MEMS电容开关;A tunable filter, comprising: the inductance and MEMS capacitive switch of any one of claims 1-6;所述电感和所述MEMS电容开关连接。The inductor is connected to the MEMS capacitive switch.
- 根据权利要求7所述的可调滤波器,还包括:电容器;The tunable filter of claim 7, further comprising: a capacitor;所述电容器的第一端与所述MEMS电容开关连接,所述电容器的第二端接地。A first end of the capacitor is connected to the MEMS capacitive switch, and a second end of the capacitor is grounded.
- 根据权利要求7-8中任一项所述的可调滤波器,所述可调滤波器包括:输入端、输出端、两个电感和三个MEMS电容开关;The tunable filter according to any one of claims 7-8, the tunable filter comprising: an input end, an output end, two inductors and three MEMS capacitive switches;两个所述电感串联在所述输入端和所述输出端之间,所述三个MEMS电容开关分别与所述输入端、所述输出端和所述两个电感之间的连接点连接。The two inductors are connected in series between the input terminal and the output terminal, and the three MEMS capacitive switches are respectively connected to the input terminal, the output terminal and the connection point between the two inductors.
- 根据权利要求7所述的可调滤波器,其中,所述MEMS开关电容包括:可调膜桥电容。8. The tunable filter of claim 7, wherein the MEMS switched capacitor comprises a tunable membrane bridge capacitor.
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US20140253260A1 (en) * | 2013-03-08 | 2014-09-11 | Omron Corporation | High-frequency switch |
CN106817103A (en) * | 2016-12-19 | 2017-06-09 | 北京航天微电科技有限公司 | A kind of micromechanics tunable filter |
CN110768643A (en) * | 2019-10-11 | 2020-02-07 | 成都挚信电子技术有限责任公司 | Electronic control impedance allocation chip based on radio frequency micro-electromechanical structure and microwave system |
CN113014221A (en) * | 2021-03-29 | 2021-06-22 | 广东大普通信技术有限公司 | Inductor and tunable filter |
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US20140253260A1 (en) * | 2013-03-08 | 2014-09-11 | Omron Corporation | High-frequency switch |
CN106817103A (en) * | 2016-12-19 | 2017-06-09 | 北京航天微电科技有限公司 | A kind of micromechanics tunable filter |
CN110768643A (en) * | 2019-10-11 | 2020-02-07 | 成都挚信电子技术有限责任公司 | Electronic control impedance allocation chip based on radio frequency micro-electromechanical structure and microwave system |
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