WO2022205150A1

WO2022205150A1 - Quartz resonator having reinforcing structure and formation method therefor, and electronic device

Info

Publication number: WO2022205150A1
Application number: PCT/CN2021/084623
Authority: WO
Inventors: 张孟伦; 庞慰; 孙晨
Original assignee: 天津大学
Priority date: 2021-03-29
Filing date: 2021-03-31
Publication date: 2022-10-06
Also published as: CN113300689B; CN113300689A

Abstract

Disclosed are a quartz resonator having a reinforcing structure and a fabrication method therefor, and an electronic device. The quartz resonator having a reinforcing structure of the present invention comprises: a substrate; a boss structure, the boss structure being located on the substrate; a contact layer, the contact layer being located on the boss structure; a lower electrode metal layer, the lower electrode metal layer being located on the contact layer and comprising a lower electrode, a lower electrode wire, and a lower pin; a quartz wafer, the quartz wafer being located on the lower electrode metal layer; an upper electrode metal layer, the upper electrode metal layer being located on the quartz wafer and comprising an upper electrode, an upper electrode lead, and an upper pin; and a reinforcing structure, the reinforcing structure being located above or below the quartz wafer.

Description

Quartz resonator with reinforced structure, method of forming the same, and electronic device

technical field

The present invention relates to the technical field of resonators, in particular to a quartz resonator with a reinforced structure, a method for forming the same, and an electronic device.

Background technique

Quartz Crystal Resonator (Quartz Crystal Resonator) is a kind of electronic components that use the piezoelectric effect of quartz crystals. It is a key component in electronic devices such as oscillators and filters. It has outstanding performance in frequency stabilization, frequency selection and precision timing. advantages and wide application. The current development trend requires quartz resonators to have higher resonant frequencies (such as greater than 40MHz) and better mechanical shock resistance and reliability; due to the high frequency, it is difficult to form thinner resonators by etching the quartz substrate by traditional methods. The quartz resonant region has reached a higher target frequency, and the use of MEMS technology to make a quartz film is more conducive to making high-frequency quartz resonators. On the other hand, when the quartz film is thinner, the external stress (such as the stress from the substrate) is more easily transmitted to the resonance region of the quartz film and thus affects the frequency stability of the resonator; at the same time, when the quartz film is thinner, the resonator is easier to Affected by mechanical shock and environmental vibration, its reliability is further deteriorated compared to low frequency quartz resonators. There is an urgent need to find a structural design and fabrication method, which can meet the requirements of high resonance frequency of quartz resonators on the one hand, and can meet the requirements of external stress, mechanical shock resistance stability and reliability at the same time.

SUMMARY OF THE INVENTION

In view of this, the present invention proposes a quartz crystal resonator and its manufacturing method which can not only meet the requirements of high resonant frequency of the quartz resonator, but also meet the requirements of resistance to external stress, mechanical shock resistance, stability and reliability, and a method for manufacturing the same. Electronic devices with quartz crystal resonators. The technical scheme of the present invention is as follows:

A quartz resonator with reinforcement structure, comprising: a base; a boss structure, the boss structure is located on the base; a contact layer, the contact layer is located on the boss structure; a lower electrode a metal layer, the lower electrode metal layer is located on the contact layer, including a lower electrode, a lower electrode wire and a lower pin; a quartz wafer, the quartz wafer is located on the lower electrode metal layer; the upper electrode metal layer layer, the upper electrode metal layer is located on the quartz wafer, including an upper electrode, an upper electrode lead and an upper pin; a reinforcement structure, the reinforcement structure is located above or below the quartz wafer, and the reinforcement structure has window.

Optionally, the reinforcing structure covers at least the areas occupied by the lower pins and the upper pins in plan view, and does not invade the areas occupied by the lower electrodes and the upper electrodes.

Optionally, the reinforcement structure is a single-layer structure.

Optionally, the reinforcement structure is a double-layer structure, including a flat bonding layer adjacent to the quartz wafer and a reinforcement support layer away from the quartz wafer, and the material of the flat bonding layer is silicon dioxide, metal oxide material or polycrystalline silicon, and the material of the reinforcing support layer is quartz or monocrystalline silicon.

Optionally, the number of the boss structures is two, and the two boss structures are located on two sides or the same side of the center of gravity of the quartz wafer.

Optionally, it further includes: a packaging cover, the packaging cover is bonded with the base.

Optionally, both the packaging cover and the substrate are made of silicon material.

A method for forming a quartz resonator with a reinforced structure, comprising: respectively forming a patterned first electrode metal layer and a second electrode metal layer on the upper and lower sides of a quartz crystal, wherein the first electrode metal layer includes a first electrode metal layer. An electrode, a first electrode lead and a first lead, the second electrode metal layer includes a second electrode, a second electrode lead and a second lead; then a reinforcing material is deposited on the current semiconductor structure and then etched to form a window with a window. Reinforcing the structure to obtain a reinforced resonant structure; forming a boss structure on a substrate, and then forming a contact layer on the boss structure; upright or inverting the reinforced resonant structure, and then bonding to the contacts above the layer.

Optionally, the reinforcement structure is a single-layer structure.

Optionally, after the step of upright or inversion of the reinforced resonant structure and then bonding to the contact layer, the method further includes: bonding a package cover to the substrate.

An electronic device includes the quartz resonator with a reinforced structure according to the present invention.

According to the technical solution of the present invention, the high-frequency quartz crystal resonator manufactured by the MEMS process is insensitive to external stress, mechanical shock and environmental vibration, and has higher reliability and frequency stability. Through grinding, chemical mechanical polishing, dry etching and other MEMS processes to thin the quartz wafer as a whole, so that the quartz resonant area has reached the target thickness (that is, the target frequency), and at the same time in the non-resonant area (especially the connection bond with the substrate) close position) is equipped with a structure with stronger mechanical stability. The patented quartz thin-film bulk acoustic wave resonator completely adopts the MEMS process and the large-scale wafer-level packaging (such as 12-inch wafer) process, which can realize large-scale and low-cost production, and the produced devices have high precision and consistency. it is good.

Description of drawings

For purposes of illustration and not limitation, the present invention will now be described in accordance with preferred embodiments thereof, particularly with reference to the accompanying drawings, wherein:

1A is an external view of a quartz resonator with a reinforcement structure according to an embodiment of the present invention, wherein the reinforcement structure 140 is a core structure;

FIG. 1B is an expanded view of FIG. 1A along the Z-axis;

1C is a top view of the structure of FIG. 1A;

FIG. 1D is a cross-sectional view taken along line A1-A2 of FIG. 1C;

1E is a schematic diagram of a double boss structure according to an embodiment of the present invention;

1F is a schematic diagram of one location of a reinforcement structure according to an embodiment of the present invention;

2A to 2H are schematic top views of the coverage area of the reinforcement structure in the quartz resonator with the reinforcement structure according to different embodiments of the present invention;

3A to 3M are schematic process diagrams of a method for forming a quartz resonator with a reinforced structure according to an embodiment of the present invention.

Detailed ways

FIG. 1A is an external view of a quartz resonator having a reinforcement structure according to an embodiment of the present invention, wherein the reinforcement structure 140 is a core structure. FIG. 1B is an expanded view of FIG. 1A along the Z-axis. in:

The material of the substrate 100 is usually single crystal silicon.

The boss structure 101 is located on the surface of the substrate 100 and is usually formed by using the material of the substrate itself, and is used to elevate the quartz wafer so that the core working part is suspended.

The contact layer 102 is located on the boss structure 101 . In fact, there are also metallized vias buried inside the substrate 100 and the boss structures 101 below the contact layer 102 , and these structures are not shown in FIG. 1B .

The lower electrode metal layer 110 is located on the lower surface of the quartz wafer 120, and the material of which is usually selected from gold, silver, titanium, tungsten, chromium, aluminum, molybdenum, and the like. Further, the lower electrode metal layer 110 may include a lower electrode 110a, a lower electrode wire 110b and a lower pin 110c. The electrode metal layer 110 may further include a lower contact 110d, and the lower contact 110d may function as an electrical connection to lead out electrical signals of the lower electrode.

The quartz wafer 120 is made by cutting artificial quartz according to a certain crystal direction, and can be divided into a quartz wafer main body 120a and a through hole 120b. The through hole 120b can realize electrical connection between the upper and lower surface contacts of the quartz wafer main body 120a through metallization. After steps such as thinning, the final thickness of the quartz wafer 120 ranges from 0.1 micrometers to 50 micrometers.

The upper electrode metal layer 130 is located on the upper surface of the quartz wafer 120, and the material of which is usually selected from gold, silver, titanium, tungsten, chromium, aluminum, molybdenum, and the like. Further, the upper electrode metal layer 130 may include an upper electrode 130a, an upper electrode wire 130b and an upper pin 130c.

The reinforcement structure 140 covers the surface of the wafer 120 and part of the metal layer 130 , and may be a single-layer structure or a double-layer structure, which will be described in detail in the subsequent views.

1C is a top view of the structure of FIG. 1A , and FIG. 1D is a cross-sectional view taken along line A1 - A2 of FIG. 1C . Also shown in FIG. 1D is the package lid structure 200 , as well as the bonding layers 104 and 210 used to bond the package lid 200 and the substrate 100 . The material of the package cover 200 is usually monocrystalline silicon, and the material of the bonding layer can be selected from gold, indium, tin, copper, germanium, aluminum, and the like.

The cavity structure formed by the substrate 100 and the package cover 200 and the area not covered by the reinforcement structure 140 (ie the window inside the reinforcement structure 140 ) are communicated, which is beneficial to air pressure balance and the structural reliability of the device is higher.

In FIG. 1D , from bottom to top, a bottom contact layer 105 is provided on the lower surface of the substrate 100 , and the bottom contact layer 105 is connected to the vias 103 located in the substrate 100 and the boss structures 101 through metallization The contact layer 102 on the upper surface of the mesa structure 101 is attached to the lower contact 110d on the lower surface of the quartz wafer 120 through a bonding process. The reason why the lower contact 110d is connected to the contact layer 102 here instead of having the lower contact 110d directly connected to the metal in the via 103 is that the lower contact 110d is bonded to the contact layer 102 with a higher connection reliability.

Further, a part of the contact layer 102 is deposited and attached to the sidewall of the through hole 120b located in the quartz wafer 120 and connected to the upper pin 130c located on the upper surface of the quartz wafer 120 at the opening of the through hole 120b, and the upper pin 130c is connected to the upper electrode 130a through the upper electrode wire 130b, thus forming an electrical connection from the bottom contact layer 105 to the upper electrode 130a. The connection between the lower electrode 110a and the bottom contact layer 105 on the lower surface of the substrate 100 is similar to that described above, except that the electrical connection does not need to pass through the through hole 120b, but is connected from the lower electrode 110a in FIG. 1B through the lower electrode wire 110b. The lower pin 110c is then connected to the metal and bottom contact layer 105 in the other through hole 103 in FIG. 1D through the contact layer 102 located at the lower part of the lower pin 110c. Optionally, the through hole 103 in FIG. 1D can also be disposed inside the package ring of the package cover 200, and the bottom contact layer 105 is transferred to the upper surface of the package cover 200, so that the lower part of the through hole 103 can be connected to the key The bonding layer 210 is connected to the upper part, and the upper part is connected to 105. At the same time, additional connecting wires or metal layers connect the contact layer 102 and the bonding layer 104, and the electrical connection between the external contacts and the upper and lower electrodes of the quartz wafer can also be realized.

Since the total thickness of the piezoelectric film and electrodes of the quartz material in the resonance region of the quartz resonator is generally less than 50um, only and usually only supports at the contacts at the ends of the wires, and most of the regions are in a floating state. Therefore, without the reinforcement structure 140, the stress accumulated in the substrate 100 is easily conducted to the quartz wafer body 120a via the boss structure 101 and the contact layer 102, the lower pins 110c and the lower contacts 110d. Since the vibrational frequency of the quartz material is stress-strain sensitive, it can cause the quartz vibrational frequency to drift, which affects the resonator performance. In addition, when subjected to external mechanical shock and vibration, the quartz wafer 120 may also be cracked or even broken, thereby causing device damage. The reinforcement structure 140 can effectively improve the rigidity of the quartz wafer 120, thereby effectively blocking the conduction of strain to the quartz wafer 120, or reducing the deformation caused by the stress conducted to the quartz wafer 120, thereby enhancing the frequency stability of the resonator, and also can The possibility of damage of the quartz wafer 120 under the impact of external force is significantly reduced, thereby improving the reliability of the device. It is worth noting here that the reinforcement structure 140 does not cover the upper and lower electrode regions of the resonator, so it hardly affects the working state of the effective region of the resonator. The reinforcement structure 140 may have a single-layer structure or a double-layer structure. In the embodiments herein, the reinforcement structure 140 adopts a double-layer structure, but this is not intended to limit the number of layers that can actually be used, but is only for illustration. In FIG. 1D and the following, the reinforcement structure 140 in which the double-layer structure is designed includes a flat bonding layer 140 a adjacent to the quartz wafer 120 and a reinforcement support layer 140 b away from the quartz wafer 120 . The material of the flat bonding layer 140a may be a dielectric layer such as silicon dioxide or metal oxide or polycrystalline silicon, and the material of the reinforcing support layer 140b may be quartz or single crystal silicon.

In order to enhance the reliability of the device structure, the double boss structure support design shown in FIG. 1E can also be used. In the structure shown in FIG. 1E , two boss structures 101 are arranged on the left and right sides of the center of gravity of the quartz wafer 120 (this is different from the case where the boss structure 101 shown in FIG. 1D is provided on one side of the center of gravity of the quartz wafer 120 ) ), such a structure has better stability.

As shown in FIG. 1F , the reinforcement structure 140 can also be placed on the lower surface of the quartz wafer 120, so that the quartz wafer 120 can be kept away from the boss structure 101, and the reinforcement structure 140 can be blocked between the quartz wafer 120 and the boss structure 101, Thereby, the influence of strain on the quartz wafer 120 is further reduced.

In the quartz resonator with the reinforcement structure according to the embodiment of the present invention, the reinforcement structure 140 covers at least the area occupied by the lower lead 110c and the upper lead 130c in plan view, and does not invade the area occupied by the lower electrode 110a and the upper electrode 130a. Based on this design principle, the embodiments shown in FIGS. 2A-2H are given, which are only used for illustration and are not intended to limit the possibility of specific implementations.

In the coverage area embodiment shown in FIG. 2A , the left upper and lower outer boundaries of the reinforcement structure 140 are substantially coincident with the edge of the quartz wafer 120 , and the right outer boundary of the reinforcement structure 140 is aligned with the lower contact 110 c and the upper contact The right borders of point 130c substantially coincide. The boundary of the inner window of the reinforcement structure 140 is substantially coincident with the lower electrode 110a and the upper electrode 130a. Obviously, the position of the outer boundary on the right side of the reinforcement structure 140 in FIG. 2A can also be changed, for example, the above outer boundary can be continuously translated to the right, so that the reinforcement structure 140 covers more area of the quartz wafer 120 , one of the special cases is The right outer boundary of the reinforcement structure 140 substantially coincides with the right outer boundary of the quartz wafer 120 . Similarly, the remaining three boundaries of the reinforcement structure 140 can also be continuously indented inwardly, so that a gap is formed between the boundary of the reinforcement structure 140 and the boundary of the quartz wafer 120 .

FIG. 2B shows the coverage of the reinforcement structure 140 on the top view corresponding to FIG. 1E . The upper and lower boundaries of the reinforcement structure 140 are coincident with the boundaries of the quartz wafer 120, and the left and right boundaries of the reinforcement structure 140 are respectively coincident with the left boundary of the lower contact 110c and the right boundary of the upper contact 130c. Obviously, the above boundary can also be changed according to the description of the embodiment of FIG. 1A . For example, the left/right boundary of the reinforcement structure 140 may be continuously moved left/right until the left and right edges of the quartz wafer, and the like.

In the coverage area embodiment shown in FIG. 2C , the boundary of the window 141 of the reinforcement structure 140 no longer coincides with the edge of the upper electrode 130a, and the size of the window 141 is larger than that of the electrode, so that a gap is formed between the boundary of the window 141 and the edge of the electrode.

In the footprint embodiment shown in FIG. 2D, the right edge of the window 141 inside the reinforcement structure 140 is moved to coincide with the left edge of the lower contact 110c and the upper contact 130c.

In the footprint embodiment shown in Figure 2E, the reinforcement material to the left of window 141 has been removed.

In the footprint embodiment shown in Figure 2F, the reinforcement material between the lower contact 110c and the upper contact 130c is further removed.

In the coverage area embodiment shown in FIG. 2G, the reinforcement material above and below the window 141 may be further removed, but the reinforcement material between the lower contact 110c and the upper contact 130c is retained.

In the coverage area embodiment shown in FIG. 2H, the reinforcement structure 140 only covers the lower contact 110c and the upper contact 130c.

The method for forming a quartz resonator with a reinforced structure according to an embodiment of the present invention includes: respectively forming a patterned first electrode metal layer and a second electrode metal layer on the upper and lower sides of the quartz crystal, wherein the first electrode metal layer includes a first electrode metal layer. an electrode, a first electrode lead and a first lead, the second electrode metal layer includes a second electrode, a second electrode lead and a second lead; then a reinforcing material is deposited on the current semiconductor structure and then etched to form a reinforcing material with a window structure to obtain a reinforced resonance structure; a boss structure is formed on the substrate, and then a contact layer is formed on the boss structure; the reinforced resonance structure is upright or inverted, and then bonded on the contact layer. It should be noted that, in the case of upright bonding, the reinforcement structure is located above the quartz crystal; in the case of upside-down bonding, the reinforcement structure is located below the quartz crystal.

In the method for forming a quartz resonator with a reinforced structure according to the embodiment of the present invention, the core step is to first grind and polish the whole quartz wafer to uniformly thin it, and then reinforced the target area, so as to ensure the film thickness in the resonance area. It can improve the design flexibility of the reinforcement layer, such as the thickness and material of the reinforcement layer, so as to maximize the isolation of external stress and mechanical impact.

For better understanding by those skilled in the art, based on the structure of FIG. 1D and in conjunction with FIG. 3A to FIG. 3M , only the main steps are listed below because the process flow is a common process in the industry.

Step 1: As shown in FIG. 3A , first, the upper electrode metal layer 130 is deposited on the quartz wafer 120 and patterned.

Step 2: As shown in FIG. 3B , the flat bonding layer 140a is covered on the metal layer 130 and the quartz wafer 120 and bonded with the reinforcing support layer 140b. Wherein, the material of the flat bonding layer 140a can be selected from a dielectric layer such as silicon dioxide, metal oxide or polysilicon, and the material of the reinforcement support layer 140b can be selected from quartz or single crystal silicon.

Step 3: As shown in FIG. 3C, the second layered solid structure 140b is thinned by grinding and polishing.

Step 4: As shown in FIG. 3C, the structure shown in FIG. 3C is turned over, and the quartz wafer 120 is thinned by grinding, polishing, etching and other processes.

Step 5: As shown in FIG. 3E, the quartz wafer 120 is partially patterned to obtain the quartz wafer main body 120a and the through hole 120b, and the lower electrode metal layer 110 is deposited on the quartz wafer main body 120a and patterned. During this process, The sidewalls and openings of the through holes 120b are also covered by the lower electrode metal layer 110, thereby realizing metallization of the through holes; at the same time, the reinforcement support layer 140b and the reinforcement support layer 140a can also play a role in the quartz wafer body 120a and the upper electrode metal layer 130. Protective effects.

Step 6: As shown in FIG. 3F , the lower electrode metal layer 110 and the quartz wafer body 120a are covered with the bonding layer 125a and bonded with the protective substrate 125b. The material of the bonding layer 125a can be selected from paraffin, silicon dioxide, metal oxide, polymer, polysilicon, etc., and the protective substrate 125b can be selected from single crystal silicon.

Step 7: As shown in FIG. 3G, the structure shown in FIG. 3F is turned over, and the reinforcing support layer 140b and the flat bonding layer 140a are patterned through an etching process, and the window 141 formed by the patterning is required to expose at least the entire upper electrode 130a .

Step 8: As shown in FIG. 3H, the protective substrate 125b and the bonding layer 125a are removed. At the same time, optionally, a dicing process is performed to cut the array structure on one wafer into a plurality of discrete structures.

Step 9: As shown in FIG. 3I, the boss structure 101 is formed on the substrate 100, the through hole 103 is formed and metallized, and the metal on the surface of the substrate 100 and the boss structure 101 is patterned to form the contact layer 102 and the bonding layer 104 and bonding layer 105.

Step 10: As shown in FIG. 3J, the structures in FIG. 3H and FIG. 3I are bonded together to make the contact layer 102 and the lower contact 110c fit together. The bonding process here can use wafer-level bonding; alternatively, the 3H structure after dicing and separation can also be individually bonded to the 3I structure, and this is repeated many times to bond multiple 3H structures to the whole piece. 3I wafer.

Step 11 : As shown in FIG. 3K , a bonding layer 210 is deposited on the substrate 200 of the package cover material and patterned.

Step 12 : as shown in FIG. 3L , using the patterned bonding layer 210 as a mask, a groove structure is etched in the base 200 of the package cover material to obtain the package cover 200 .

Step 13 : As shown in FIG. 3M , the package cover 200 in FIG. 3L is turned over and bonded to the structure in FIG. 3J at wafer level, so that the bonding layer 210 and the bonding layer 104 are adhered to form the final structure.

The electronic device of the embodiment of the present invention includes any quartz resonator with a reinforced structure disclosed in the present invention.

According to the technical solution of the embodiment of the present invention, the high-frequency quartz crystal resonator manufactured by the MEMS process is insensitive to external stress, mechanical shock and environmental vibration, and has higher reliability and frequency stability. Through grinding, chemical mechanical polishing, dry etching and other MEMS processes to thin the quartz wafer as a whole, so that the quartz resonant area has reached the target thickness (that is, the target frequency), and at the same time in the non-resonant area (especially the connection bond with the substrate) close position) is equipped with a structure with stronger mechanical stability. The patented quartz thin-film bulk acoustic wave resonator completely adopts the MEMS process and the large-scale wafer-level packaging (such as 12-inch wafer) process, which can realize large-scale and low-cost production, and the produced devices have high precision and consistency. it is good.

The above-mentioned specific embodiments do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions may occur depending on design requirements and other factors. Any modifications, equivalent replacements and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

A quartz resonator with a reinforced structure, characterized in that it includes:

base;

a boss structure, the boss structure is located on the base;

a contact layer, the contact layer is located on the boss structure;

a lower electrode metal layer, the lower electrode metal layer is located on the contact layer, and includes a lower electrode, a lower electrode wire and a lower pin;

a quartz wafer, the quartz wafer is located on the lower electrode metal layer;

an upper electrode metal layer, the upper electrode metal layer is located on the quartz wafer, and includes an upper electrode, an upper electrode lead and an upper pin;

A reinforcement structure, the reinforcement structure being located above or below the quartz wafer, the reinforcement structure having a window.
The quartz resonator with reinforcement structure according to claim 1, wherein the reinforcement structure covers at least the area occupied by the lower pin and the upper pin in plan view, and does not invade the lower electrode and the area occupied by the upper electrode.
The quartz resonator with reinforcement structure according to claim 1 or 2, wherein the reinforcement structure is a single-layer structure.
The quartz resonator with reinforcement structure according to claim 1 or 2, wherein the reinforcement structure is a double-layer structure, comprising a flat bonding layer adjacent to the quartz wafer and a reinforcement support away from the quartz wafer layer, the material of the flat bonding layer is silicon dioxide, metal oxide or polysilicon, and the material of the reinforcement support layer is quartz or monocrystalline silicon.
The quartz resonator with reinforcement structure according to claim 1 or 2, wherein the number of the boss structures is two, and the two boss structures are located on two sides or the same side of the center of gravity of the quartz wafer .
The quartz resonator with a reinforced structure according to claim 1 or 2, further comprising: a packaging cover, the packaging cover is bonded to the base.
The quartz resonator with a reinforced structure according to claim 6, wherein the package cover and the base are both made of silicon material.
A method for forming a quartz resonator with a reinforced structure, comprising:

A patterned first electrode metal layer and a second electrode metal layer are respectively formed on the upper and lower sides of the quartz crystal, wherein the first electrode metal layer includes a first electrode, a first electrode wire and a first pin, and the first electrode metal layer includes a first electrode, a first electrode wire and a first lead. The two-electrode metal layer includes a second electrode, a second electrode lead and a second pin;

then depositing a reinforcement material on the current semiconductor structure and then etching to form a reinforcement structure with a window, thereby obtaining a reinforcement resonance structure;

forming a boss structure on the substrate, and then forming a contact layer on the boss structure;

The reinforced resonant structure is upside down or inverted and then bonded onto the contact layer.
The method for forming a quartz resonator with a reinforcing structure according to claim 8, wherein the reinforcing structure covers at least the area occupied by the lower pin and the upper pin in a plan view, and does not invade all the the area occupied by the lower electrode and the upper electrode.
The method for forming a quartz resonator with a reinforcement structure according to claim 8 or 9, wherein the reinforcement structure is a single-layer structure.
The method for forming a quartz resonator with a reinforcement structure according to claim 8 or 9, wherein the reinforcement structure is a double-layer structure, comprising a flat bonding layer adjacent to the quartz wafer and a flat bonding layer away from the quartz wafer The material of the flat bonding layer is silicon dioxide, metal oxide or polycrystalline silicon, and the material of the reinforcement support layer is quartz or monocrystalline silicon.
The method for forming a quartz resonator with a reinforced structure according to claim 8 or 9, wherein the number of the boss structures is two, and the two boss structures are located on both sides of the center of gravity of the quartz wafer or the same side.
The method for forming a quartz resonator with a reinforced structure according to claim 8 or 9, characterized in that, in the step of upright or inversion of the reinforced resonant structure, and then bonding to the contact layer Afterwards, the method further includes: bonding the package cover to the substrate.
The method for forming a quartz resonator with a reinforced structure according to claim 13, wherein the package cover and the substrate are both made of silicon material.
An electronic device, characterized by comprising the quartz resonator with a reinforced structure according to any one of claims 1 to 7.