WO2022167111A1 - Method for producing high-current capacitors by laser technology - Google Patents
Method for producing high-current capacitors by laser technology Download PDFInfo
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- WO2022167111A1 WO2022167111A1 PCT/EP2021/080425 EP2021080425W WO2022167111A1 WO 2022167111 A1 WO2022167111 A1 WO 2022167111A1 EP 2021080425 W EP2021080425 W EP 2021080425W WO 2022167111 A1 WO2022167111 A1 WO 2022167111A1
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- Prior art keywords
- layer
- current capacitor
- dielectric
- capacitor according
- electron storage
- Prior art date
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- 239000003990 capacitor Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000005516 engineering process Methods 0.000 title description 3
- 238000003860 storage Methods 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 14
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000725 suspension Substances 0.000 claims abstract description 9
- 238000003466 welding Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 8
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002052 molecular layer Substances 0.000 abstract description 4
- 239000004408 titanium dioxide Substances 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 238000004146 energy storage Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910021389 graphene Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000002041 carbon nanotube Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000011133 lead Substances 0.000 description 5
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 229910001416 lithium ion Inorganic materials 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/46—Metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
Definitions
- the invention relates to a high-current capacitor, also referred to here as a supercapacitor, which is preferably designed on an electronic basis and is suitable for ultra-rapid charging.
- the storage capacity for electrical energy is preferably higher than that of a lithium battery which is comparable in terms of volume.
- capacitors based on electronics usually consist of a first conductive coating, preferably Al, Au, Cu, Ag, or Pb; a dielectric, preferably paper, TiO2, or BaTiO3; and a second conductive coating, preferably configured like the first conductive coating.
- first conductive coating preferably Al, Au, Cu, Ag, or Pb
- dielectric preferably paper, TiO2, or BaTiO3
- second conductive coating preferably configured like the first conductive coating.
- Frequencies i.e. around 10 Hz to 10 GHz, and at relatively low currents, i.e. 10 mA to 100 A, resulting in a small capacitance of 1 pF to 1000 ⁇ F.
- Storage capacity describes the storage of electrical energy, measured in kWh. Alternatively, the term energy storage capability is also used.
- the electrical energy results from: where U is the charging voltage measured in volts, V, and C is the capacitance measured in ampere-seconds per volt, As/V.
- Q C*U
- the charging currents for an electrically powered car with a battery are between about 10 A when charging at a household socket and about 1000 A to about 2000 A when charging at a powerful charging station.
- the energy storage capacity is designed to be 30 to 100 kWh.
- the currents mentioned above are sufficient, for example, to absorb the energy generated when the car brakes quickly and to use it for a subsequent acceleration process.
- the battery voltages are between 12 and 800 V. 48V is normal for mid-range cars.
- the energy storage capacity is one tenth of the energy storage capacity of a modern battery.
- the voltage for the individual cell is 3 to 5 volts and is based on the movement of lithium ions between two electrodes, which are separated by a diaphragm. Due to the mass of the ions, the frequency limit is around 10 Hz.
- the advantage of high-current capacitors compared to batteries, especially lithium batteries, is the longer service life and freedom from wear.
- Prior art high current capacitors discharge at about 5% per month.
- the surface of the starting materials is usually smooth, ie roughness N4 to N11.
- the design voltage for a single cell is between 2 and 12 V per single cell.
- Conventional capacitors can be designed for any voltage, with the voltage dependency being determined by the density of the dielectric and the dielectric strength of the material.
- Conventional capacitors can be designed for any frequency due to the mobility of the electrons. The frequency dependency is due to the high ion mass of the lithium ions compared to the electron mass. The electron mass is about 1836 times larger than the proton mass.
- US 9312076 B1 relates to a very high energy density ultracapacitor device comprising a plurality of carbon electrodes having an outer surface and an inner surface. A conductive metallic surface is connected to the outer surface. A ceramic is bonded to the inner surface of at least one of the plurality of carbon electrodes. A separator and an electrolyte are provided between the plurality of carbon electrodes.
- WO 2016057983 A2 relates to an electrode.
- the electrode comprises a current collector made of aluminum with an aluminum carbide layer on at least one of the surfaces on which at least one layer of carbon nanotubes (CNTs) is arranged.
- the electrode may include vertically aligned, horizontally aligned, or unaligned (e.g., tangled or clustered) CNTs.
- the electrode may include compressed CNTs.
- the electrode can comprise single-wall, double-wall, or multi-wall CNTs.
- the electrode can include multiple layers of CNTs.
- the object of the invention is to combine the advantages (frequency, voltage, no discharge, no energy loss) of conventional electronic capacitors and today's supercapacitors (capacity, power-to-weight ratio) and to avoid their disadvantages.
- the aim is to use modern manufacturing processes based on laser technology to create storage media that correspond to the power-to-weight ratio and energy storage capacity of modern batteries.
- These high-current capacitors can be implemented as solid-state or film capacitors.
- the management process takes place on a purely electronic basis.
- the solid-state capacitor consists of at least one individual cell, which has the following structure: a first metal plate for dissipating electrons, a first electron storage layer, a dielectric, a second electron storage layer and a second metal plate.
- a stacked capacitor is created by stacking the individual cells on top of each other.
- a film capacitor consists of: a first metal foil, a first electron storage layer, a layer dielectric, a second electron storage layer, and a second metal foil.
- the structure of an individual cell in a preferred embodiment of the invention is described below:
- First step: A first plate is made of conductive material and has a size of preferably about 5 cm by 5 cm. The material is preferably a metal for current dissipation. More preferably, the first plate is made of AL for low cost construction and for currents between 10A and 1000A. More preferably, the first plate is made of Cu in order to achieve even faster discharge and high currents. The magnitude of the currents is determined by the cable cross-section.
- the first plate is made of Au and/or Pb for special applications that require a high storage capacity.
- the first plate is made of Ti and/or WC (tungsten carbide) for special applications that require high temperature resistance.
- the surface of the first plate is provided with a corrugated structure, preferably with a laser, preferably with a height of 1 ⁇ m to 20 ⁇ m, particularly preferably up to 2 ⁇ m. This is referred to as microstructured.
- the microstructure of the first plate is then provided with a nanostructure, preferably in the range from 60 nm to 600 nm.
- Nanographite preferably 600m2/g, 0.6g/cm3, is applied as a second conductive layer using a special laser application process, preferably laser-assisted suspension spraying, preferably with a layer height of 20 nm to 200 ⁇ m. This layer stores the electrons. As in the first step, this layer is micro- and/or nano-structured using a laser. Further preferred materials are, each alone or in combination with nanographite: Carbo nanotubes, graphene, graphene nanogel, graphene oxide, graphene acid, WC or Cu in suspension nanoform.
- Preferred materials are characterized by a high surface area, preferably 600 m2/g to 800 m2/g, and high conductivity.
- Third step Barium titanate is applied, preferably in suspension form, particularly preferably in nanometer form, using a special laser application method, preferably the one mentioned above. A high-density, amorphous layer with high breakdown field strength and high dielectric constant is formed. The layer height is preferably 20 nm to 200 ⁇ m. Both cannot be achieved simultaneously with previous methods. In a preferred embodiment, this layer is post-structured by means of a laser, as in the first step. A contact surface for the next layer is formed.
- Fourth step introduction of a second electron storage layer, preferably nanographite, preferably with post-structuring analogous to the second step.
- Fifth step introduction of the second metal layer, preferably by means of a laser method, particularly preferably with the same laser application method as described above.
- the laser method for producing carbon hard material layers which produce a droplet-free layer, can be used. These layers have high dielectric strength and high conductivity.
- a voltage-resistant layer made of diamond-like carbon can be introduced into the dielectric.
- the dielectric preferably the barium titanate dielectric, can also be produced by laser-supported suspension spraying by using the starting materials BaO and TiO 2 either as a mixture or individually first BaO and then TiO 2 or vice versa.
- the structure created with steps 1 to 5 has the following advantages: High areal density of the storage medium, when using nanographite 20 m2/cm2 with a layer height of 20 ⁇ m. High breakdown field strength due to the high density and the amorphous state of the dielectric and the laser deposition process used and/or the dielectric used (approx. 20kV/mm). Unlike a crystalline state, there are no dislocations that can cause premature voltage breakdown. High dielectric constant of 100000 instead of 1000 to 10000 in the crystalline state, also due to the high density and the amorphous state of the layer.
- a capacitor as described above can be designed for 200V, while a conventional supercapacitor is only designed for 5V. That alone leads to a ratio of in quantity via the relationship of energy storage capability and for a design voltage of 200V of storable energy.
- the charge is released by electrons, which is why large amounts of energy can be absorbed or released in a short time.
- the rapid current dissipation is further generated by the large contact surfaces of the materials used.
- the capacitor has a low temperature dependency due to the amorphous dielectric, which is caused by less movement of impurities and dislocations compared to the crystalline state.
- Charging at charging stations with 100 kW to 1000 kW is possible in seconds to minutes.
- a capacitor in the charging station can be charged when there is no vehicle in the charging station. This can then be quickly transferred from the capacitor in the charging station to the capacitor in the car.
- the capacitor is almost wear-free because only electrons are moved. Furthermore, leakage currents can be prevented.
- FIG. 1 shows a side view of an embodiment of a capacitor according to the invention.
- the capacitor has an upper metal plate 1a and a lower metal plate 1b.
- the metal plate is preferably made of one of the materials CU, silver, AL, Pb or stainless steel, which means that the charge can be discharged quickly. Copper is particularly advantageous.
- the height is approximately 3 ⁇ m to 30 ⁇ m, preferably approximately 5 ⁇ m.
- the structure is preferably produced with a laser, preferably with the method according to Lasagni, et al. as described in DE 102018200036 B3.
- Lasagni's method can achieve the required structures simultaneously by rearranging the surface. No nanoparticles are released in the process. Alternatively, corresponding structures can be produced abrasively, preferably with a laser.
- the capacitor has an upper nanolayer 3 and a lower nanolayer 3 between the upper and lower metal plates.
- the nanolayers 3 have a height in the range from 5 to 300 ⁇ m, preferably 15 ⁇ m. This increases the contact area.
- the capacitor has a further layer as a dielectric, preferably barium titanate.
- TiO 2 or diamond-like non-conductive carbon layers can be used in combination with barium titanate.
- the layer height of the further layer is preferably between 5 ⁇ m and 30 ⁇ m, preferably 15 ⁇ m.
- the layer height is selected in accordance with the intended voltage and the breakdown field strength.
- At least one of the metal plates 1a, 1b can alternatively be designed as a foil and/or produced by suspension deposition welding, preferably laser-assisted.
- a first metal foil is used and a laser deposition method is used for the second draining electrode.
- the microstructure and nanostructure 2 is simultaneously or sequentially deposited by rearranging the surface material using conventional lasers according to the method of Lasagni, et al. generated as described in DE 102018200036 B3.
- the electron storage layer 3, also referred to as a nanolayer, consists of at least one of: nanographite, graphene or nanotubes.
- the layer 3 consists of highly conductive metals applied in nanometer form by laser-supported suspension build-up welding according to Barbosa, et al. as described in DE102017218592 A1.
- the dielectric 4 is preferably barium nitrate, more preferably in nanometer form.
- the application takes place as for the electron blocking layer 3, preferably as in DE 10 2017218 592 A1. This results in an amorphous structure with high density and high dielectric strength and a high dielectric constant.
- the capacity is determined by the volume of the electron storage layer and the size of the inner surface, by the height of the dielectric 4 and the dielectric strength of the dielectric layer 4. The way the layers are created improves density, dielectric strength and dielectric constant.
- the capacitor can be designed for any voltage from 1V to 10000V.
- the capacitor can be designed as a film or stacked capacitor.
- a single cell of a preferred embodiment of the invention is considered below.
- the single cell is approximately square in shape with a first side length of 0.05 m and a second side length of 0.05 m. This results in an area of 0.0025m 2 , ie 25 cm2.
- the single cell has the following preferred layer structure: ⁇ a first layer of metal, preferably aluminum or copper, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m; ⁇ a second layer, which is an electron storage layer and is preferably made of nanographite or graphene, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m; ⁇ a third layer, which is a dielectric and is preferably made of barium titanate, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m; ⁇ a fourth layer, which is an electron storage layer and is preferably made of nanographite or graphene, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m; and ⁇ a fifth layer of metal, preferably aluminum or copper, with a height of 20 ⁇ m, ie 20 ⁇ 10 -6 m.
- the volume of the electron storage layer is 0.05 cm3.
- 10 individual cells can be stacked on top of each other in a multicell with a height of 1mm.
- 10 multicells can be stacked in a block cell with a height of 1 cm.
- 5 block cells can be stacked. This results in 500 individual cells with a total of 2500 layers in a block.
- a battery block can have 8 blocks, ie 4000 individual cells.
- a block cell has a volume of 125 cm3.
- a block has a volume of 1000cm3 or 1 liter, L.
- Electrical energy The following estimate refers to the following maximum values: ⁇ The density of the graph of 1g/cm3; at lower density, this layer is increased in proportion to the lower density. ⁇ The breakdown voltage is assumed to be 20kV/mm. ⁇ The dielectric constant is assumed to be 100000.
- the deposition process used produces a compact layer with high density and high dislocation density, resulting in high dielectric strength and high dielectric constant.
- the stored electrical energy of the capacitor is given by: For U equal to 230V, the above battery block results in: So a specific energy of 390kWh per L. On the other hand, only 39kWh/dm3 can be achieved without a structural effect. In comparison, strontium-doped BaTiO 3 without a structure is around 8 kWh/dm3. A missing or reduced texture effect can be compensated by increasing the voltage and/or increasing the electron storage volume.
- the quasi-amorphous layers reduce the temperature dependence of the storage capacity.
- Weight The weight is determined as follows: The block consists of 2/5 aluminum, 2/5 graphite and 1/5 barium titanate.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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DE112021006991.8T DE112021006991A5 (en) | 2021-02-05 | 2021-11-02 | High current capacitor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102021201088.1 | 2021-02-05 | ||
DE102021201088 | 2021-02-05 |
Publications (1)
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WO2022167111A1 true WO2022167111A1 (en) | 2022-08-11 |
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PCT/EP2021/080425 WO2022167111A1 (en) | 2021-02-05 | 2021-11-02 | Method for producing high-current capacitors by laser technology |
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DE (1) | DE112021006991A5 (en) |
WO (1) | WO2022167111A1 (en) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3442790A1 (en) * | 1984-11-23 | 1986-06-05 | Dieter Prof. Dr. Linz Bäuerle | METHOD FOR PRODUCING THICK FILM CAPACITORS |
US20060120020A1 (en) * | 2004-12-03 | 2006-06-08 | Dowgiallo Edward J Jr | High performance capacitor with high dielectric constant material |
US20070001258A1 (en) * | 2005-07-01 | 2007-01-04 | Masami Aihara | Capacitor |
KR20090105704A (en) * | 2008-04-03 | 2009-10-07 | 삼성전기주식회사 | Printed circuit board having embedded capacitors and method of manufacturing the same |
EP2763150A1 (en) * | 2011-08-18 | 2014-08-06 | Kanji Shimizu | Thin-film capacitor device |
US9312076B1 (en) | 2009-12-30 | 2016-04-12 | University Of West Florida | Very high energy-density ultracapacitor apparatus and method |
WO2016057983A2 (en) | 2014-10-09 | 2016-04-14 | Fascap Systems Corporation | Nanostructured electrode for energy storage device |
DE102018200036B3 (en) | 2018-01-03 | 2019-01-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optical arrangement for direct laser interference structuring |
DE102017218592A1 (en) | 2017-10-18 | 2019-04-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for producing a sliding bearing and a plain bearing produced by the method |
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2021
- 2021-11-02 DE DE112021006991.8T patent/DE112021006991A5/en active Pending
- 2021-11-02 WO PCT/EP2021/080425 patent/WO2022167111A1/en active Application Filing
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3442790A1 (en) * | 1984-11-23 | 1986-06-05 | Dieter Prof. Dr. Linz Bäuerle | METHOD FOR PRODUCING THICK FILM CAPACITORS |
US20060120020A1 (en) * | 2004-12-03 | 2006-06-08 | Dowgiallo Edward J Jr | High performance capacitor with high dielectric constant material |
US20070001258A1 (en) * | 2005-07-01 | 2007-01-04 | Masami Aihara | Capacitor |
KR20090105704A (en) * | 2008-04-03 | 2009-10-07 | 삼성전기주식회사 | Printed circuit board having embedded capacitors and method of manufacturing the same |
US9312076B1 (en) | 2009-12-30 | 2016-04-12 | University Of West Florida | Very high energy-density ultracapacitor apparatus and method |
EP2763150A1 (en) * | 2011-08-18 | 2014-08-06 | Kanji Shimizu | Thin-film capacitor device |
WO2016057983A2 (en) | 2014-10-09 | 2016-04-14 | Fascap Systems Corporation | Nanostructured electrode for energy storage device |
DE102017218592A1 (en) | 2017-10-18 | 2019-04-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for producing a sliding bearing and a plain bearing produced by the method |
DE102018200036B3 (en) | 2018-01-03 | 2019-01-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Optical arrangement for direct laser interference structuring |
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