WO2022149556A1

WO2022149556A1 - Imaging device and electronic apparatus

Info

Publication number: WO2022149556A1
Application number: PCT/JP2021/048905
Authority: WO
Inventors: 裕一山口; 祐哉北林; 奈津子大谷
Original assignee: ソニーセミコンダクタソリューションズ株式会社
Priority date: 2021-01-08
Filing date: 2021-12-28
Publication date: 2022-07-14
Also published as: JP2022107201A

Abstract

[Problem] To provide an imaging device capable of suppressing the decline in quantum efficiency, and an electronic apparatus using the imaging device. [Solution] An imaging device according to the present disclosure comprises: a pixel array unit in which pixel groups, each serving as a unit, are disposed in a matrix, each of the pixel groups including a first pixel for photoelectrically converting light in a first waveband, a second pixel for photoelectrically converting light in a second waveband, and a third pixel for photoelectrically converting light in a third waveband; and pixel transistors provided in correspondence with the pixel groups and each disposed in a region that includes at least one pixel excluding the first pixel in a corresponding one of the pixel groups.

Description

Imaging equipment and electronic equipment

The embodiments of the present disclosure relate to an image pickup apparatus and an electronic device.

An image pickup device in which each pixel is separated by a deep trench (Full Trench Isolation) in order to prevent color mixing due to long wavelength light such as red light is known. This image pickup apparatus is provided with a photoelectric conversion unit, a floating diffusion (FD), a transfer gate (TG), and a pixel transistor in each pixel (see Patent Document 1).

WO2017 / 130723

In the image pickup apparatus described in Patent Document 1, since long-wavelength light such as red light has a low absorption rate of silicon (Si), the quantum efficiency (quantum efficiency) is higher than that of pixels that photoelectrically convert light in other wavelength bands. That is, there is a problem that the ratio of the number of photoelectrons or holes taken out as a photocurrent to the number of incident photons) is low.

The present disclosure provides an image pickup device capable of suppressing a decrease in quantum efficiency and an electronic device using this image pickup device.

The image pickup apparatus according to the first aspect of the present disclosure captures the first pixel that photoelectrically converts the light of the first wavelength band, the second pixel that photoelectrically converts the light of the second wavelength band, and the light of the third wavelength band. A pixel array unit arranged in a matrix with a pixel group including a third pixel to be photoelectrically converted as a unit, and at least one pixel provided corresponding to the pixel group and excluding the first pixel of the corresponding pixel group. It includes a pixel transistor arranged in a region including the pixel transistor.

In the image pickup apparatus according to the first aspect, the first to third wavelength bands are wavelength bands corresponding to red, green, and blue light, respectively, and the first to third pixels are red pixels and green pixels, respectively. It may be a blue pixel.

In the image pickup apparatus according to the first aspect, the pixel transistor may include a reset transistor, an amplification transistor, and a selection transistor.

In the image pickup apparatus according to the first aspect, the pixel transistor may be arranged in the region of the third pixel excluding the first pixel and the second pixel of the corresponding pixel group.

In the image pickup apparatus according to the first aspect, the pixel group may include a floating diffusion shared by a plurality of pixels included in the pixel group.

In the image pickup apparatus according to the first aspect, the pixel transistor may be arranged in the region of the blue pixel and the region of the green pixel.

In the image pickup apparatus according to the first aspect, the pixel transistor may be arranged between the region of the blue pixel and the region of the green pixel.

The image pickup apparatus according to the first aspect may include a pixel separation portion extending in the depth direction of the pixels along the pixel boundary to separate the pixels included in the pixel group.

In the image pickup apparatus according to the first aspect, the pixel group includes two pixels adjacent to each other in the first direction and two pixels adjacent to each other in the second direction intersecting the first direction, and these four pixels are included. The red pixel, the green pixel, and the blue pixel may be included.

In the image pickup apparatus according to the first aspect, the four pixels may include two green pixels.

In the image pickup apparatus according to the first aspect, one pixel transistor is shared by two pixel groups arranged adjacent to the first direction or the second direction, and the first portion of the one pixel transistor is shared. May be arranged in one of the two pixel groups, and the second portion of the one pixel transistor may be arranged in the other of the two pixel groups.

In the image pickup apparatus according to the first aspect, the first portion is arranged in the region of the blue pixel of one of the two pixel groups, and the second portion is the blue color of the other of the two pixel groups. It may be arranged in the area of the pixel.

In the image pickup apparatus according to the first aspect, the two pixel groups are arranged adjacent to the second direction, and the first portion extends between the two pixel groups and in the first direction. The second portion may be arranged along the region at the other end of the two pixel groups in the second direction and along the region extending in the first direction.

In the image pickup apparatus according to the first aspect, the two pixel groups are arranged adjacent to each other in the second direction, and the first portion is an end portion of one of the two pixel groups in the first direction. And is arranged along the region extending in the second direction, the second portion is at the other end of the two pixel groups in the first direction and along the region extending in the second direction. May be arranged.

In the image pickup apparatus according to the first aspect, the pixel transistor includes a reset transistor, an amplification transistor, and a selection transistor, and the amplification transistor and the selection transistor include the blue pixel of one of the two pixel groups. The reset transistor may be arranged in a region, and the reset transistor may be arranged in a region including the blue pixel of the other of the two pixel groups.

In the image pickup apparatus according to the first aspect, the pixel transistor includes a reset transistor, an amplification transistor, and a selection transistor, and the amplification transistor may be arranged in both the first portion and the second portion. ..

In the image pickup apparatus according to the first aspect, the pixel transistor includes a conversion efficiency switching transistor that switches the conversion efficiency of photoelectric conversion, and the conversion efficiency switching transistor is a region of the blue pixel of one or the other of the two pixel groups. It may be arranged in.

In the image pickup apparatus according to the first aspect, the first floating diffusion shared by a plurality of pixels included in one of the two pixel groups and the second floating diffusion shared by a plurality of pixels included in the other of the two pixel groups. It may be equipped with floating diffusion.

Even if the image pickup apparatus according to the first aspect includes a pixel separation unit extending in the depth direction of the pixels along the pixel boundary, the image pickup device according to the first aspect separates a plurality of pixels included in the first pixel group and the second pixel. good.

The electronic device according to the second aspect includes an image pickup device and a signal processing unit that performs signal processing based on the pixel signal captured by the image pickup device, and the image pickup device photoelectrically emits light in the first wavelength band. Pixels arranged in a matrix in units of a pixel group including a first pixel to be converted, a second pixel for photoelectric conversion of light in the second wavelength band, and a third pixel for photoelectric conversion of light in the third wavelength band. Array part and
A pixel transistor provided corresponding to the pixel group and arranged in a region including at least one pixel excluding the first pixel of the corresponding pixel group.
It is equipped with.

The circuit diagram which shows the whole structure of the image pickup apparatus by 1st Embodiment. The plan view which shows the structure of the pixel group in 1st Embodiment. 3A is a cross-sectional view taken along the cutting line AA shown in FIG. 2, and FIG. 3B is a cross-sectional view taken along the cutting line BB shown in FIG. The circuit diagram of the pixel group in 1st Embodiment. The plan view which shows the structure of the pixel group in the image pickup apparatus by 2nd Embodiment. The circuit diagram of the pixel group in the 2nd Embodiment. The plan view which shows the structure of the pixel group in the 1st modification of 2nd Embodiment. The circuit diagram of the pixel group in the 1st modification. The plan view which shows the structure of the pixel group in the 2nd modification of 2nd Embodiment. The circuit diagram of the pixel group in the 2nd modification. The circuit diagram of the pixel group in the 3rd modification of the 2nd Embodiment. The plan view which shows the pixel group in the image pickup apparatus according to 3rd Embodiment. The plan view shows the pixel group in the image pickup apparatus according to 1st modification of 3rd Embodiment. The plan view which shows the pixel group in the image pickup apparatus according to 4th Embodiment. FIG. 4 is a cross-sectional view of a pixel group cut along the cutting line XX shown in FIG. The plan view which shows the pixel group in the image pickup apparatus according to 5th Embodiment. FIG. 15 is a cross-sectional view of a pixel group cut along the cutting line YY shown in FIG. FIG. 18 is a plan view of the pixel group of the image pickup apparatus of the sixth embodiment as viewed from the front side. 19A is a cross-sectional view taken along the cutting line AA shown in FIG. 18, and FIG. 19B is a cross-sectional view taken along the cutting line BB shown in FIG. FIG. 20 is a circuit diagram showing a pixel group of the sixth embodiment. The block diagram which shows an example of the schematic structure of a vehicle control system. Explanatory drawing which shows an example of the installation position of the outside information detection unit and the image pickup unit.

The embodiments of the present disclosure will be described with reference to the drawings. In the following embodiments, the components and functions of the image pickup device and the electronic device will be mainly described, but the image pickup device and the electronic device may have components and functions not shown or described. The following description does not exclude components or functions not shown or described.

Further, the drawings referred to in the following description are drawings for explaining the embodiments of the present disclosure and promoting their understanding, and for the sake of clarity, the shapes, dimensions, ratios, etc. shown in the drawings are actually shown. May differ from.

(First Embodiment)
FIG. 1 shows the overall configuration of the image pickup apparatus according to the first embodiment. The image pickup device 250 of this embodiment is, for example, a back-illuminated image sensor 250, which includes a pixel area 251, a pixel drive line 252, a vertical signal line 253, a vertical drive unit 254, and a column processing unit 255. It includes a horizontal drive unit 256, a system control unit 257, a signal processing unit 258, and a memory unit 259. These are formed on a semiconductor substrate (chip) such as a silicon substrate (not shown). The pixel region 251 is formed on a sensor chip made of a first semiconductor substrate, and the pixel drive line 252, the vertical signal line 253, the vertical drive unit 254, the column processing unit 255, the horizontal drive unit 256, the system control unit 257, and the signal processing. A unit 258 and a memory unit 259 may be formed on a circuit chip made of a second semiconductor substrate, and these chips may be bonded together.

The pixel area 251 is a pixel array in which pixels are two-dimensionally arranged, and an optical signal is converted into an electric signal for imaging. In this pixel area 251, a pixel drive line 252 is provided for every two rows of a pixel, and a vertical signal line 253 is provided for every two columns. In this embodiment, the configuration of the pixels constituting the pixel region 251 will be described in detail later.

The vertical drive unit 254 is configured by a shift register, an address decoder, or the like, and pixel signals corresponding to the charges stored in each image sensor in the pixel area 251 are read out in order from the top in the order of odd-numbered columns and even-numbered columns. As described above, the drive signal is supplied to the pixel drive line 252.

The column processing unit 255 has a signal processing circuit for each of the two rows of pixels in the pixel area 251. Each signal processing circuit of the column processing unit 255 performs A / D conversion processing and correlated double sampling (CDS (Correlated Double Sampling)) for the pixel signal read from the corresponding pixel and supplied through the vertical signal line 253. ) Perform signal processing such as processing. The column processing unit 255 temporarily holds the pixel signal after signal processing.

The horizontal drive unit 256 is composed of a shift register, an address decoder, etc., and sequentially selects the signal processing circuit of the column processing unit 255. As a result, the pixel signals signal-processed by each signal processing circuit of the column processing unit 255 are sequentially output to the signal processing unit 258.

The system control unit 257 is composed of a timing generator or the like that generates various timing signals, and controls the vertical drive unit 254, the column processing unit 255, and the horizontal drive unit 256 based on the various timing signals generated by the timing generator. do.
The signal processing unit 258 performs various signal processing on the pixel signal output from the column processing unit. At this time, the signal processing unit 258 stores the intermediate result of signal processing and the like in the memory unit 259 as necessary, and refers to the signal processing unit 258 at a necessary timing. The signal processing unit 258 outputs the pixel signal after signal processing.

The memory unit 259 is composed of a DRAM (Dynamic Random Access Memory), a SRAM (Static Random Access Memory), or the like.

In the pixel area 251 of the image pickup apparatus of the present embodiment, a plurality of pixels arranged two-dimensionally are divided into a pixel group having color pixels arranged in two rows and two columns. This pixel group is shown in FIG. FIG. 2 is a plan view seen from the front surface side (opposite side to the back surface side) of the image pickup apparatus. The pixel group 10 includes a red pixel 10R that converts light in the wavelength band corresponding to red (first wavelength band) into charge, and a green pixel that converts light in the wavelength band corresponding to green (second wavelength band) into charge. It includes 10G1 and 10G2, and a blue pixel 10B that converts light in a wavelength band corresponding to blue (third wavelength band) into a charge. The red pixel 10R, the green pixel 10G1, 10G2, and the blue pixel 10B correspond to the first pixel, the second pixel, and the third pixel, respectively. For example, in FIG. 2, the red pixel 10R is arranged in the first row and the first column, the green pixel 10G1 is arranged in the first row and the second column, the green pixel 10G2 is arranged in the second row and the first column, and the second row. The blue pixel 10B is arranged in the second column of the row. The sequence shown in FIG. 2 is called a Bayer sequence. It should be noted that each pixel may be a pixel corresponding to a color in a wavelength band other than red, green, and blue.

Deep trenches are provided between the red pixels 10R, the green pixels 10G1, 10G2, and the blue pixels 10B, and the elements are separated by the insulating

films

20a, 20b, 20c, 20d, 20e, and 20f provided in these trenches. There is. That is, these trenches and the insulating film serve as pixel separation portions. In this first embodiment, the trench is provided as an FTI (Full Trench Isolation) penetrating the semiconductor substrate. The insulating film 20a is arranged in the left column direction of the red pixel 10R and the green pixel 10G2. The insulating film 20b is arranged in the row direction between the red pixel 10R and the green pixel 10G1 and between the green pixel 10G2 and the blue pixel 10B. The insulating film 20c is arranged in the right column direction of the green pixel 10G1 and the blue pixel 10B. The insulating film 20d is arranged in the row direction on the upper side of the red pixel 10R and the green pixel 10G1. The insulating film 20e is arranged in the row direction between the red pixel 10R and the green pixel 10G2 and between the green pixel 10G1 and the blue pixel 10B. The insulating film 20f is arranged in the lower row direction of the green pixel 10G2 and the blue pixel 10B.

Further, in the green pixel 10G1, for example, a P-type impurity region 25G1 having a triangular planar shape is arranged so as to connect to the insulating film 20e and the insulating film 20c. This P-type impurity region 25G1 is used to connect the pixel region 251 on which the green pixel 10G1 is formed to the GND potential.

In the red pixel 10R, for example, a P-type impurity region 25R having a triangular planar shape is arranged so as to connect to the insulating film 20e and the insulating film 20a. This P-type impurity region 25R is used to connect the pixel region 251 on which the red pixel 10R is formed to the GND potential.

In the green pixel 10G2, for example, a P-type impurity region 25G2 having a triangular planar shape is arranged so as to connect to the insulating film 20e and the insulating film 20a. The P-type impurity region 25G2 is used to connect the pixel region 251 on which the green pixel 10G2 is formed to the GND potential.

In the blue pixel 10B, for example, a P-type impurity region 25B having a triangular planar shape is arranged so as to connect to the insulating film 20e and the insulating film 20c. The P-type impurity region 25B is used to connect the pixel region 251 on which the blue pixel 10B is formed to the GND potential.

The red pixel 10R, the green pixel 10G1, 10G2, and the blue pixel 10B each include a photoelectric conversion element (photodiode) PD, a transfer transistor TG, and a floating diffusion FD, respectively. A pixel transistor is arranged in a pixel region other than the red pixel 10R. In this specification, the selection transistor SEL, the reset transistor RST, and the amplification transistor AMP are collectively referred to as a pixel transistor. For example, the reset transistor RST is arranged in the area of the green pixel 10G1, the selection transistor SEL is arranged in the area of the green pixel 10G1, and the amplification transistor AMP is arranged in the area of the blue pixel 10B. However, in the present embodiment, the pixel transistor is not arranged in the region of the red pixel 10R.

FIG. 3A shows a cross section of the pixel group cut along the cutting line AA shown in FIG. 2, and FIG. 3B shows a cross section cut along the cutting line BB shown in FIG. The red pixel 10R, the green pixels 10G1, 10G2, and the blue pixel 10B each have a photoelectric conversion element PD formed in the semiconductor region 12. The red pixel 10R is provided with a red filter 14R on the photoelectric conversion element PD, and a microlens 18 is provided above the red filter 14R. The green pixel 10G2 is provided with a green filter 14G on the photoelectric conversion element PD, and a microlens 18 is provided above the green filter 14G (FIG. 3A). The green pixel 10G1 is provided with a green filter 14G on the photoelectric conversion element PD, and a microlens 18 is provided above the green filter 14G. The blue pixel 10B is provided with a blue filter 14B on the photoelectric conversion element PD, and a microlens 18 is provided above the blue filter 14B (FIG. 3B). A set transistor SEL is provided below the photoelectric conversion element PD of the green pixel 10G2 via an insulating film 21 (FIG. 3A). A reset transistor RST is provided below the photoelectric conversion element PD of the green pixel 10G1 via an insulating film 21, and an amplification transistor AMP is provided below the photoelectric conversion element PD of the blue pixel 10B via an insulating film 21. (Fig. 3B).

As described above, according to the present embodiment, since the pixel transistor is not provided in the region of the red pixel 10R, the signal charge photoelectrically converted at the deep position of the photoelectric conversion element PD is not absorbed by the pixel transistor, and the pixel. It is possible to suppress the decrease in quantum efficiency in the group. Further, since the pixel transistors SEL, RST, and AMP are respectively arranged below the photoelectric conversion element PD of the green pixels 10G1 and 10G2 and the blue pixel 10B via the insulating film 21, the size of the pixel transistor can be increased.

The circuit diagram of the pixel group shown in FIG. 2 is shown in FIG. The wiring for each element shown in this circuit diagram is shown by a thick solid line in FIG. These wirings are mainly arranged on the insulating film 20b (FIG. 2). As can be seen from FIG. 4, in the color pixels 10R, 10G1, 10G2, and 10B, each photoelectric conversion element FD is connected to the floating diffusion FD via the transfer transistor TG. This floating diffusion FD is connected to the power supply VDD via the reset transistor RST and is also connected to the gate of the amplification transistor AMP. In this amplification transistor AMP, the drain is connected to the power supply VDD and the drain is connected to the source of the selection transistor SEL. That is, the amplification transistor AMP becomes a source follower amplifier.

The reading operation for the pixels configured in this way is as follows. At the stage when the exposure is completed, the signal charge is accumulated in the photoelectric conversion element PD, and the floating diffusion FD has the noise charge accumulated during the exposure period. At this time, by applying a reset pulse to the gate of the reset transistor RST of the pixel in the selected row, the noise charge is discharged from the floating diffusion FD and the floating diffusion FD is reset to the potential VDD. Further, when a row selection pulse is applied to the gate of the selection transistor SEL, the source follower amplifier AMP becomes conductive, and the reset floating diffusion FD potential is output from the source follower amplifier AMP. Subsequently, a read pulse is applied from the vertical drive unit 254 (FIG. 1) to the transfer transistor of the pixel of the selected row, the signal charge of the photoelectric conversion element PD is transferred to the floating diffusion FD, and the potential of the floating diffusion FD decreases. .. Subsequently, the potential of the floating diffusion FD in which the signal charge is accumulated is output from the source follower amplifier AMP. Then, in the step, the difference between the reset output and the output due to the signal charge is obtained, for example, by correlated double sampling. In the final step, the signal charge in the floating diffusion FD is reset to complete the read operation.

As described above, according to the present embodiment, since the pixel transistors are provided in the regions of the color pixels 10G1, 10G2, and 10B other than the red pixel 10R, the decrease in quantum efficiency can be suppressed. .. In addition, the size of the pixel transistor in the pixel group can be increased.

(Second Embodiment)
The image pickup apparatus according to the second embodiment will be described with reference to FIG. FIG. 5 is a plan view of the pixel arrangement of the image pickup apparatus of the second embodiment and the wiring of the selection transistor as viewed from the front side.

The image pickup device of the second embodiment has the same arrangement of color pixels in the pixel group as the image pickup device of the first embodiment shown in FIG. 2, but the arrangement and wiring of the pixel transistors are different. Have. That is, the image pickup apparatus of the second embodiment has a configuration in which a pixel transistor is shared with respect to _two

pixel groups

10 ₁ and 102 arranged in the column direction. Each color pixel of the two

pixel groups

10 ₁ and 10 ₂ is separated by the insulating film 20.

The amplification transistor AMP and the selection transistor SEL are arranged in the region of the blue pixel 10B of the _first -stage pixel group 101, and the reset transistor RST and the dummy transistor DMY are arranged in the region of the blue pixel 10B of the _second -stage pixel group 102. It has an arranged configuration. The dummy transistor DMY has the same structure as the selection transistor SEL, the amplification transistor AMP, and the reset transistor RST, but is not wired and does not function as a transistor. The circuit diagram of the

pixel groups

101 and 102 arranged in this way is shown in FIG. The wiring for each element in this circuit diagram is shown by a thick solid line in FIG. These wirings are mainly arranged on the insulating film between the red pixel 10R and the green pixel 10G1 and the insulating film between the green pixel 10G2 and the blue pixel 10B.

According to the second embodiment configured in this way, since the pixel transistor is not arranged in the region of the red pixel 10R, it is possible to suppress the decrease in quantum efficiency.

(First modification)
The image pickup apparatus according to the first modification will be described with reference to FIGS. 7 and 8. FIG. 7 is a plan view of the pixel arrangement of the image pickup apparatus of the first modification and the wiring of the selection transistor as viewed from the front side, and FIG. 8 is a circuit diagram of the pixel group of the first modification.

The image pickup apparatus of this first modification has a configuration in which the dummy transistor DMY arranged in the region of the blue pixel 10B of the pixel group 102 is replaced with the amplification transistor AMP2 in the image pickup apparatus of the _second embodiment shown in FIG. ing. The amplification transistor AMP arranged in the region of the blue pixel 10B of the pixel group 101 shown in FIG. ₅ becomes the amplification transistor AMP1, and the amplification transistor AMP1 and the amplification transistor AMP2 have a common gate and are connected in parallel (FIG. 7). , FIG. 8). With such a configuration, the transconductance Gm of the amplification transistor can be increased.

According to this first modification, since the pixel transistor is not arranged in the region of the red pixel 10R as in the second embodiment, the decrease in quantum efficiency can be suppressed.

(Second modification)
The image pickup apparatus according to the second modification will be described with reference to FIGS. 9 and 10. FIG. 9 is a plan view of the pixel arrangement of the image pickup apparatus of the second modification and the wiring of the selection transistor as viewed from the front side, and FIG. 10 is a circuit diagram of the pixel group of the second modification.

In the image pickup device of the second embodiment shown in FIG. 5, the image pickup device of this _second modification replaces the dummy transistor DMY arranged in the region of the blue pixel 10B of the pixel group 102 with the conversion efficiency changeover switch FDG (FIG. 5). 9). Although not shown in FIG. 9, the sub-floating diffusion Sub-FD is also referred to as a capacitance addition section. The conversion efficiency selector switch FDG is arranged in series between the reset transistor RST and the floating diffusion FD. The sub-floating diffusion Sub-FD is arranged between the connection node of the reset transistor RST and the conversion efficiency selector switch FDG and the ground node (FIG. 10). With this configuration, the conversion efficiency of photoelectric conversion can be switched. The conversion efficiency selector switch FDG is used when the conversion efficiency of the pixels is in the low mode. When this conversion efficiency selector switch FDG is on, a parasitic capacitance including the reset transistor RST is added to the sub-floating diffusion Sub-FD, so that the conversion efficiency is significantly improved as compared with the case of parallel connection shown in FIG. 11 described later. Can be lowered.

According to this second modification, since the pixel transistor is not arranged in the region of the red pixel 10R as in the second embodiment, the decrease in quantum efficiency can be suppressed.

(Third modification example)
The image pickup apparatus according to the third modification will be described with reference to FIG. FIG. 11 is a circuit diagram of the pixel group of the image pickup apparatus of the third modification. This third modification has the same configuration in the image pickup apparatus of the second modification except that the connection of the conversion efficiency selector switch FDG and the sub-floating diffusion Sub-FD is different.

In this third modification, the conversion efficiency selector switch FDG and the sub-floating diffusion Sub-FD are connected in parallel with the floating diffusion FD. With this configuration, it has a conversion efficiency switching function.

According to this third modification, since the pixel transistor is not arranged in the region of the red pixel 10R as in the second embodiment, the decrease in quantum efficiency can be suppressed.

(Third Embodiment)
The image pickup apparatus according to the third embodiment will be described with reference to FIG. FIG. 12 is a plan view of the pixel group of the image pickup apparatus of the third embodiment as viewed from the front side. The image pickup apparatus of the _third embodiment is the image pickup apparatus of the second embodiment shown in FIG. Is physically shared. Here, physically sharing means that it may be directly connected to the floating diffusion FD or may be connected via wiring. The shared floating diffusion FD is arranged in a region including a semiconductor region 12 in which the red pixel 10R, the green pixels 10G1, 10G2, and the blue pixel 10B of the pixel group 10 ₁ are in common contact (for example, a fourth described later). 14 and 15 of the embodiments). The floating diffusion FD is connected to each transfer gate TG of the red pixel 10R, the green pixel 10G1, 10G2, and the blue pixel 10B. In this third embodiment, the trench is provided so as not to penetrate the semiconductor region.

Further, the floating diffusion FD of the red pixel 10R, the green pixels 10G1, 10G2, and the blue pixel 10B of the _second -stage pixel group 102 is shared. The shared floating diffusion FD is arranged in a region including a semiconductor portion to which the red pixel 10R, the green pixels _10G1 , 10G2, and the blue pixel 10B of the pixel group 102 are commonly connected (for example, a fourth described later). 14 and 15 of the embodiments). The floating diffusion FD is connected to each transfer gate TG of the red pixel 10R, the green pixel 10G1, 10G2, and the blue pixel 10B.

Then, in the third embodiment, unlike the second embodiment shown in FIG. 5, the amplification transistor AMP and the selection transistor SEL have the blue pixel 10B of the _first -stage pixel group 101 and the _second -stage pixel group 102. It is arranged on the insulating film 20A between the green pixel 10G1 and the green pixel 10G1. The insulating film 20A is included in the region including the blue pixel 10B of the _first -stage pixel group 101 and is included in the region including the green pixel 10G1 of the _second -stage pixel group 102. That is, the amplification transistor AMP and the selection transistor SEL are arranged in the region including the blue pixel 10B of the _first -stage pixel group 101 and the region including the green pixel 10G1 of the _second -stage pixel group 102. Further, unlike the second embodiment shown in FIG. 5, the reset transistor RST and the dummy transistor DMY have a blue pixel 10B of the _second -stage pixel group 101 and a green pixel of the third-stage pixel group not shown in the figure. It is arranged on the insulating film 20B between them. That is, among the insulating films of the blue pixels 10B arranged in the row direction, they are arranged on the insulating film 20B at a position far from the green pixels _10G1 of the pixel group 101. Since the insulating film 20B is included in the region including the blue pixel 10B of the _second -stage pixel group 101, the reset transistor RST and the dummy transistor DMY are included in the region including the blue pixel 10B of the _second -stage pixel group 101. Be placed.

The shared floating diffusion FDs of the first-stage pixel group 10 ₁ and the second-stage pixel group 10 ₂ are wired to the gate of the amplification transistor AMP and the drain of the reset transistor RST, respectively (indicated by a thick solid line in FIG. 12). Be connected.

According to the third embodiment configured as described above, since the pixel transistor is not arranged in the region of the red pixel 10R as in the second embodiment, the decrease in quantum efficiency can be suppressed.

(First modification)
The image pickup apparatus according to the first modification of the third embodiment will be described with reference to FIG. FIG. 13 is a plan view of the pixel group of the image pickup apparatus of the first modification as viewed from the front side. Unlike the third embodiment shown in FIG. 12, the image pickup apparatus of this first modification has the amplification transistor AMP, the selection transistor SEL, the reset transistor RST, and the dummy transistor DMY on the insulating film in the column direction (longitudinal direction). Be placed.

As shown in FIG. 13, the amplification transistor AMP and the selection transistor SEL are the insulating film on the side far from the green pixel _10G2 of the pixel group 101 _among the insulating films in the column direction (vertical direction) of the blue pixel 10B of the pixel group 101. It is placed on 20C. That is, the amplification transistor AMP and the selection transistor SEL are arranged in the region including the blue pixel 10B of the pixel group ₁₀₁ . Further, the reset transistor RST and the dummy transistor DMY are arranged on the insulating film 20D on the _side far from the green pixel _10G2 of the pixel group 102 among the insulating films in the column direction (vertical direction) of the blue pixel 10B of the pixel group 102. To. That is, the reset transistor RST and the dummy transistor DMY _are arranged in the region including the blue pixel 10B of the pixel group 102.

Also in this first modification, the shared floating diffusion FDs of the first-stage pixel group 10 ₁ and the _second -stage pixel group 102 are wired to the gate of the amplification transistor AMP and the drain of the reset transistor RST, respectively (FIG. 13 is connected by a thick solid line).

According to the first modification configured as described above, since the pixel transistor is not arranged in the region of the red pixel 10R as in the third embodiment, the decrease in quantum efficiency can be suppressed.

(Fourth Embodiment)
The image pickup apparatus according to the fourth embodiment will be described with reference to FIGS. 14 and 15. FIG. 14 is a plan view of the pixel group 10 of the image pickup apparatus of the fourth embodiment as viewed from the front side. FIG. 15 is a cross-sectional view taken along the cutting line XX shown in FIG. Unlike the first embodiment, the floating diffusion FD of the red pixel 10R, the green pixel 10G1, the green pixel 10G2, and the blue pixel 10B constituting the pixel group 10 is shared. That is, the floating diffusion FD is arranged in a region including a semiconductor region 12 to which the red pixels 10R, the green pixels 10G1, 10G2, and the blue pixels 10B of the pixel group 10 are commonly connected. The red pixel 10R, the green pixels 10G1, 10G2, and the blue pixel 10B of the pixel group 10 are covered with the insulating film 20.

Further, in the present embodiment, the amplification transistor, the reset transistor RSL, and the selection transistor SEL, which are the pixel transistors of the pixel group 10, are the same row as the blue pixel 10B and adjacent to each other in the lower pixel group (not shown). It is placed on an insulating film between the green pixels of the. That is, the amplification transistor, the reset transistor RSL, and the selection transistor SEL are arranged in the region including the blue pixel 10B.

It is connected to the gate of the shared floating diffusion FD amplification transistor and the drain of the reset transistor RST by wiring (indicated by a thick solid line in FIG. 14).

Similar to the first embodiment, the green pixel 10G1 is provided with, for example, a P-type impurity region 25G1 having a triangular planar shape so as to be connected to the insulating film 20e and the insulating film 20c. In the red pixel 10R, for example, a P-type impurity region 25R having a triangular planar shape is arranged so as to connect to the insulating film 20e and the insulating film 20a. In the green pixel 10G2, for example, a P-type impurity region 25G2 having a triangular planar shape is arranged so as to connect to the insulating film 20e and the insulating film 20a. In the blue pixel 10B, for example, a P-type impurity region 25B having a triangular planar shape is arranged so as to connect to the insulating film 20e and the insulating film 20c.

As shown in FIG. 15, a red filter 14R is arranged above the photoelectric conversion element PD of the red pixel 10R of the pixel group 10, and a microlens 18 is arranged above the red filter 14R. Further, a blue filter 14B is arranged above the photoelectric conversion element PD of the blue pixel 10B, and a microlens 18 is arranged above the blue filter 14B. Although not shown in No. 15, a green filter is arranged above the photoelectric conversion element PD of the green pixels 10G1 and 10G2, and a microlens is arranged above the green filter.

The circuit diagram of the pixel group 10 in the fourth embodiment is the same as the circuit diagram of the first embodiment shown in FIG.

According to the fourth embodiment configured in this way, since the pixel transistor is not arranged in the region of the red pixel 10R as in the first embodiment, the decrease in quantum efficiency can be suppressed.

(Fifth Embodiment)
The image pickup apparatus according to the fifth embodiment will be described with reference to FIGS. 16 and 17. FIG. 16 is a plan view of the pixel group of the image pickup apparatus of the fifth embodiment as viewed from the front side. FIG. 17 is a cross-sectional view taken along the cutting line YY shown in FIG. The image pickup apparatus of the fifth embodiment is different from the image pickup apparatus of the fourth embodiment shown in FIG. 14, and is a floating diffusion FD in each semiconductor region 12 of the red pixel 10R, the green pixel 10G1, the green pixel 10G2, and the blue pixel 10B. Is provided. That is, in the present embodiment, unlike the fourth embodiment shown in FIG. 16, the floating diffusion FD is not displayed in the cross-sectional view shown in FIG.

Further, in the present embodiment, the reset transistor RST, the amplification transistor 10AMP, and the selection transistor SEL are provided in the region of the blue pixel 10B. These transistors are arranged along the lateral direction (row direction) as shown in FIG. When the reset transistor RST, the amplification transistor 10AMP, and the selection transistor SEL are arranged in the vertical direction (column direction), as shown in FIG. 13, the insulating film arranged in the column direction far from the green pixel 10G2 of the blue pixel 10B. Just place it on top. The floating diffusion FDs of the red pixel 10R, the green pixel 10G1, the green pixel 10G2, and the blue pixel 10B are connected to the gate of the amplification transistor AMP and connected to the source of the reset transistor RST. The circuit diagram of the pixel group in the fifth embodiment is the same as the circuit diagram shown in FIG.

According to the fifth embodiment configured in this way, the pixel transistors AMP, RST, and SEL are arranged in the region of the blue pixel, and the pixel transistor is not arranged in the region of the red pixel 10R as in the first embodiment. It is possible to suppress a decrease in quantum efficiency.

(Sixth Embodiment)
The image pickup apparatus according to the sixth embodiment will be described with reference to FIGS. 18 to 20. FIG. 18 is a plan view of the pixel group 10 of the image pickup apparatus of the sixth embodiment as viewed from the front side. 19A is a cross-sectional view taken along the cutting line AA shown in FIG. 18, and FIG. 19B is a cross-sectional view taken along the cutting line BB shown in FIG. FIG. 20 is a circuit diagram showing a pixel group of the sixth embodiment.

The pixel group 10 in the sixth embodiment has the same arrangement as the pixel group 10 in the first embodiment shown in FIG. The trench between the green pixel 10G and the blue pixel 10B does not penetrate the semiconductor region. However, other than that, the red pixels 10R, the green pixels 10G1, 10G2, and the blue pixels 10B are each separated from the back surface side to the front surface side by the insulating film 20. Therefore, the photoelectric conversion element PD of each pixel can use the entire semiconductor region 12 of the pixel, the effective area of the pixel can be increased, and the characteristics can be improved. The green pixel 10G2 may be replaced with an IR pixel, that is, a pixel in which red and green are mixed.

The reset transistor RST of the pixel group 10 is arranged on the insulating film 20 that separates the green pixel 10G1 and the blue pixel 10B. Further, the amplification transistor AMP and the selection transistor SEL of the pixel group 10 are arranged on the insulating film 20 located far from the green pixel 10G1 among the insulating films 20 arranged in the row direction (horizontal direction) of the blue pixel 10B. ..

As shown in FIG. 20, in the pixel group 10 in the sixth embodiment, the source of the reset transistor RST is connected to the floating diffusion FD, and the drain is connected to the potential VDD. Further, the amplification transistor AMP and the selection transistor SEL are connected in series, and the gate of the amplification transistor AMP is connected to the floating diffusion FD. The circuit diagram of the pixel group 10 in the sixth embodiment is the same as the circuit diagram of the first embodiment shown in FIG. 4, except that the floating diffusion FD is not shared. Similar to the first embodiment, in this sixth embodiment, since the pixel transistor is not arranged in the region of the red pixel, the decrease in quantum efficiency can be suppressed.

(Application example)
The technique according to the present disclosure can be applied to various products. For example, the technology according to the present disclosure is any kind of movement such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, a robot, a construction machine, and an agricultural machine (tractor). It may be realized as a device mounted on the body.

FIG. 21 is a block diagram showing a schematic configuration example of a vehicle control system 7000, which is an example of a mobile control system to which the technique according to the present disclosure can be applied. The vehicle control system 7000 includes a plurality of electronic control units connected via a communication network 7010. In the example shown in FIG. 21, the vehicle control system 7000 includes a drive system control unit 7100, a body system control unit 7200, a battery control unit 7300, an outside information detection unit 7400, an in-vehicle information detection unit 7500, and an integrated control unit 7600. .. The communication network 7010 connecting these multiple control units conforms to any standard such as CAN (Controller Area Network), LIN (Local Interconnect Network), LAN (Local Area Network) or FlexRay (registered trademark). It may be an in-vehicle communication network.

Each control unit includes a microcomputer that performs arithmetic processing according to various programs, a storage unit that stores programs executed by the microcomputer or parameters used for various arithmetic, and a drive circuit that drives various controlled devices. To prepare for. Each control unit is provided with a network I / F for communicating with other control units via the communication network 7010, and is connected to devices or sensors inside and outside the vehicle by wired communication or wireless communication. A communication I / F for performing communication is provided. In FIG. 21, the functional configuration of the integrated control unit 7600 includes a microcomputer 7610, a general-purpose communication I / F7620, a dedicated communication I / F7630, a positioning unit 7640, a beacon receiving unit 7650, an in-vehicle device I / F7660, and an audio image output unit 7670. The vehicle-mounted network I / F 7680 and the storage unit 7690 are illustrated. Other control units also include a microcomputer, a communication I / F, a storage unit, and the like.

The drive system control unit 7100 controls the operation of the device related to the drive system of the vehicle according to various programs. For example, the drive system control unit 7100 has a driving force generator for generating a driving force of a vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating braking force of the vehicle. The drive system control unit 7100 may have a function as a control device such as ABS (Antilock Brake System) or ESC (Electronic Stability Control).

The vehicle state detection unit 7110 is connected to the drive system control unit 7100. The vehicle state detection unit 7110 may include, for example, a gyro sensor that detects the angular speed of the axial rotation motion of the vehicle body, an acceleration sensor that detects the acceleration of the vehicle, an accelerator pedal operation amount, a brake pedal operation amount, or steering wheel steering. It includes at least one of sensors for detecting angles, engine speeds, wheel speeds, and the like. The drive system control unit 7100 performs arithmetic processing using a signal input from the vehicle state detection unit 7110, and controls an internal combustion engine, a drive motor, an electric power steering device, a brake device, and the like.

The body system control unit 7200 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 7200 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, turn signals or fog lamps. In this case, a radio wave transmitted from a portable device that substitutes for a key or signals of various switches may be input to the body system control unit 7200. The body system control unit 7200 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.

The battery control unit 7300 controls the secondary battery 7310, which is the power supply source of the drive motor, according to various programs. For example, information such as the battery temperature, the battery output voltage, or the remaining capacity of the battery is input to the battery control unit 7300 from the battery device including the secondary battery 7310. The battery control unit 7300 performs arithmetic processing using these signals, and controls the temperature control of the secondary battery 7310 or the cooling device provided in the battery device.

The outside information detection unit 7400 detects information outside the vehicle equipped with the vehicle control system 7000. For example, at least one of the image pickup unit 7410 and the vehicle exterior information detection unit 7420 is connected to the vehicle exterior information detection unit 7400. The image pickup unit 7410 includes at least one of a ToF (Time Of Flight) camera, a stereo camera, a monocular camera, an infrared camera, and other cameras. The vehicle outside information detection unit 7420 is used, for example, to detect the current weather or an environment sensor for detecting the weather, or other vehicles, obstacles, pedestrians, etc. around the vehicle equipped with the vehicle control system 7000. At least one of the ambient information detection sensors is included.

The environment sensor may be, for example, at least one of a raindrop sensor that detects rainy weather, a fog sensor that detects fog, a sunshine sensor that detects the degree of sunshine, and a snow sensor that detects snowfall. The ambient information detection sensor may be at least one of an ultrasonic sensor, a radar device, and a LIDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging) device. The image pickup unit 7410 and the vehicle exterior information detection unit 7420 may be provided as independent sensors or devices, or may be provided as a device in which a plurality of sensors or devices are integrated.

Here, FIG. 22 shows an example of the installation position of the image pickup unit 7410 and the vehicle exterior information detection unit 7420. The

image pickup unit

7910, 7912, 7914, 7916, 7918 are provided, for example, at at least one of the front nose, side mirror, rear bumper, back door, and upper part of the windshield of the vehicle interior of the vehicle 7900. The image pickup unit 7910 provided in the front nose and the image pickup section 7918 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 7900. The

image pickup units

7912 and 7914 provided in the side mirrors mainly acquire images of the side of the vehicle 7900. The image pickup unit 7916 provided in the rear bumper or the back door mainly acquires an image of the rear of the vehicle 7900. The image pickup unit 7918 provided on the upper part of the windshield in the vehicle interior is mainly used for detecting a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

Note that FIG. 22 shows an example of the shooting range of each of the

imaging units

7910, 7912, 7914, 7916. The imaging range a indicates the imaging range of the imaging unit 7910 provided on the front nose, the imaging ranges b and c indicate the imaging range of the

imaging units

7912 and 7914 provided on the side mirrors, respectively, and the imaging range d indicates the imaging range d. The imaging range of the imaging unit 7916 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the

image pickup units

7910, 7912, 7914, 7916, a bird's-eye view image of the vehicle 7900 as viewed from above can be obtained.

The vehicle exterior

information detection unit

7920, 7922, 7924, 7926, 7928, 7930 provided on the front, rear, side, corner and the upper part of the windshield in the vehicle interior of the vehicle 7900 may be, for example, an ultrasonic sensor or a radar device. The vehicle exterior

information detection units

7920, 7926, 7930 provided on the front nose, rear bumper, back door, and upper part of the windshield in the vehicle interior of the vehicle 7900 may be, for example, a lidar device. These out-of-vehicle information detection units 7920 to 7930 are mainly used for detecting a preceding vehicle, a pedestrian, an obstacle, or the like.

Return to FIG. 21 and continue the explanation. The vehicle outside information detection unit 7400 causes the image pickup unit 7410 to capture an image of the outside of the vehicle and receives the captured image data. Further, the vehicle outside information detection unit 7400 receives the detection information from the connected vehicle outside information detection unit 7420. When the vehicle exterior information detection unit 7420 is an ultrasonic sensor, a radar device, or a lidar device, the vehicle exterior information detection unit 7400 transmits ultrasonic waves, electromagnetic waves, or the like, and receives received reflected wave information. The out-of-vehicle information detection unit 7400 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received information. The out-of-vehicle information detection unit 7400 may perform an environment recognition process for recognizing rainfall, fog, road surface conditions, etc. based on the received information. The out-of-vehicle information detection unit 7400 may calculate the distance to an object outside the vehicle based on the received information.

Further, the vehicle outside information detection unit 7400 may perform image recognition processing or distance detection processing for recognizing a person, a vehicle, an obstacle, a sign, a character on the road surface, or the like based on the received image data. The vehicle outside information detection unit 7400 performs processing such as distortion correction or alignment on the received image data, and synthesizes the image data captured by different image pickup units 7410 to generate a bird's-eye view image or a panoramic image. May be good. The vehicle exterior information detection unit 7400 may perform the viewpoint conversion process using the image data captured by different image pickup units 7410.

The in-vehicle information detection unit 7500 detects the in-vehicle information. For example, a driver state detection unit 7510 that detects a driver's state is connected to the in-vehicle information detection unit 7500. The driver state detection unit 7510 may include a camera that captures the driver, a biosensor that detects the driver's biological information, a microphone that collects sound in the vehicle interior, and the like. The biosensor is provided on, for example, on the seat surface or the steering wheel, and detects the biometric information of the passenger sitting on the seat or the driver holding the steering wheel. The in-vehicle information detection unit 7500 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 7510, and may determine whether the driver is asleep. You may. The in-vehicle information detection unit 7500 may perform processing such as noise canceling processing on the collected voice signal.

The integrated control unit 7600 controls the overall operation in the vehicle control system 7000 according to various programs. An input unit 7800 is connected to the integrated control unit 7600. The input unit 7800 is realized by a device that can be input-operated by the occupant, such as a touch panel, a button, a microphone, a switch, or a lever. Data obtained by recognizing the voice input by the microphone may be input to the integrated control unit 7600. The input unit 7800 may be, for example, a remote control device using infrared rays or other radio waves, or an external connection device such as a mobile phone or a PDA (Personal Digital Assistant) corresponding to the operation of the vehicle control system 7000. You may. The input unit 7800 may be, for example, a camera, in which case the passenger can input information by gesture. Alternatively, data obtained by detecting the movement of the wearable device worn by the passenger may be input. Further, the input unit 7800 may include, for example, an input control circuit that generates an input signal based on the information input by the passenger or the like using the input unit 7800 and outputs the input signal to the integrated control unit 7600. By operating the input unit 7800, the passenger or the like inputs various data to the vehicle control system 7000 and instructs the processing operation.

The storage unit 7690 may include a ROM (Read Only Memory) for storing various programs executed by the microcomputer, and a RAM (Random Access Memory) for storing various parameters, calculation results, sensor values, and the like. Further, the storage unit 7690 may be realized by a magnetic storage device such as an HDD (Hard Disc Drive), a semiconductor storage device, an optical storage device, an optical magnetic storage device, or the like.

The general-purpose communication I / F 7620 is a general-purpose communication I / F that mediates communication with various devices existing in the external environment 7750. General-purpose communication I / F7620 is a cellular communication protocol such as GSM (registered trademark) (Global System of Mobile communications), WiMAX (registered trademark), LTE (registered trademark) (Long Term Evolution) or LTE-A (LTE-Advanced). , Or other wireless communication protocols such as wireless LAN (also referred to as Wi-Fi®), Bluetooth® may be implemented. The general-purpose communication I / F7620 connects to a device (for example, an application server or a control server) existing on an external network (for example, the Internet, a cloud network, or a business-specific network) via a base station or an access point, for example. You may. Further, the general-purpose communication I / F7620 uses, for example, P2P (Peer To Peer) technology, and is a terminal existing in the vicinity of the vehicle (for example, a driver, a pedestrian or a store terminal, or an MTC (Machine Type Communication) terminal). May be connected with.

The dedicated communication I / F 7630 is a communication I / F that supports a communication protocol formulated for use in a vehicle. The dedicated communication I / F7630 uses a standard protocol such as WAVE (Wireless Access in Vehicle Environment), DSRC (Dedicated Short Range Communications), which is a combination of the lower layer IEEE802.11p and the upper layer IEEE1609, or a cellular communication protocol. May be implemented. Dedicated communication I / F7630 is typically vehicle-to-vehicle (Vehicle to Vehicle) communication, road-to-vehicle (Vehicle to Infrastructure) communication, vehicle-to-house (Vehicle to Home) communication, and pedestrian-to-vehicle (Vehicle to Pedestrian) communication. ) Carry out V2X communication, a concept that includes one or more of the communications.

The positioning unit 7640 receives, for example, a GNSS signal from a GNSS (Global Navigation Satellite System) satellite (for example, a GPS signal from a GPS (Global Positioning System) satellite), executes positioning, and executes positioning, and the latitude, longitude, and altitude of the vehicle. Generate location information including. The positioning unit 7640 may specify the current position by exchanging signals with the wireless access point, or may acquire position information from a terminal such as a mobile phone, PHS, or smartphone having a positioning function.

The beacon receiving unit 7650 receives radio waves or electromagnetic waves transmitted from a radio station or the like installed on the road, and acquires information such as the current position, traffic jam, road closure, or required time. The function of the beacon receiving unit 7650 may be included in the above-mentioned dedicated communication I / F 7630.

The in-vehicle device I / F 7660 is a communication interface that mediates the connection between the microcomputer 7610 and various in-vehicle devices 7760 existing in the vehicle. The in-vehicle device I / F7660 may establish a wireless connection using a wireless communication protocol such as wireless LAN, Bluetooth (registered trademark), NFC (Near Field Communication) or WUSB (Wireless USB). In addition, the in-vehicle device I / F7660 is via a connection terminal (and a cable if necessary) (not shown), USB (Universal Serial Bus), HDMI (registered trademark) (High-Definition Multimedia Interface, or MHL (Mobile High)). -Definition Link) and other wired connections may be established. The in-vehicle device 7760 includes, for example, at least one of a passenger's mobile device or wearable device, or an information device carried in or attached to the vehicle. Further, the in-vehicle device 7760 may include a navigation device for searching a route to an arbitrary destination. The in-vehicle device I / F 7660 may be a control signal to and from these in-vehicle devices 7760. Or exchange the data signal.

The in-vehicle network I / F7680 is an interface that mediates communication between the microcomputer 7610 and the communication network 7010. The vehicle-mounted network I / F7680 transmits / receives signals and the like according to a predetermined protocol supported by the communication network 7010.

The microcomputer 7610 of the integrated control unit 7600 is via at least one of general-purpose communication I / F7620, dedicated communication I / F7630, positioning unit 7640, beacon receiving unit 7650, in-vehicle device I / F7660, and in-vehicle network I / F7680. The vehicle control system 7000 is controlled according to various programs based on the information acquired. For example, the microcomputer 7610 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the acquired information inside and outside the vehicle, and outputs a control command to the drive system control unit 7100. May be good. For example, the microcomputer 7610 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. Cooperative control may be performed for the purpose of. In addition, the microcomputer 7610 automatically travels autonomously without relying on the driver's operation by controlling the driving force generator, steering mechanism, braking device, etc. based on the acquired information on the surroundings of the vehicle. Coordinated control may be performed for the purpose of driving or the like.

The microcomputer 7610 has information acquired via at least one of general-purpose communication I / F7620, dedicated communication I / F7630, positioning unit 7640, beacon receiving unit 7650, in-vehicle device I / F7660, and in-vehicle network I / F7680. Based on the above, three-dimensional distance information between the vehicle and an object such as a surrounding structure or a person may be generated, and local map information including the peripheral information of the current position of the vehicle may be created. Further, the microcomputer 7610 may predict the danger of a vehicle collision, a pedestrian or the like approaching or entering a closed road, and generate a warning signal based on the acquired information. The warning signal may be, for example, a signal for generating a warning sound or lighting a warning lamp.

The audio image output unit 7670 transmits an output signal of at least one of audio and image to an output device capable of visually or audibly notifying information to the passenger or the outside of the vehicle. In the example of FIG. 21, an audio speaker 7710, a display unit 7720, and an instrument panel 7730 are exemplified as output devices. The display unit 7720 may include, for example, at least one of an onboard display and a head-up display. The display unit 7720 may have an AR (Augmented Reality) display function. The output device may be other devices such as headphones, wearable devices such as eyeglass-type displays worn by passengers, projectors or lamps other than these devices. When the output device is a display device, the display device displays the results obtained by various processes performed by the microcomputer 7610 or the information received from other control units in various formats such as texts, images, tables, and graphs. Display visually. When the output device is an audio output device, the audio output device converts an audio signal composed of reproduced audio data, acoustic data, or the like into an analog signal and outputs the audio signal audibly.

In the example shown in FIG. 21, at least two control units connected via the communication network 7010 may be integrated as one control unit. Alternatively, each control unit may be composed of a plurality of control units. Further, the vehicle control system 7000 may include another control unit (not shown). Further, in the above description, the other control unit may have a part or all of the functions carried out by any of the control units. That is, as long as information is transmitted and received via the communication network 7010, predetermined arithmetic processing may be performed by any of the control units. Similarly, a sensor or device connected to any control unit may be connected to another control unit, and a plurality of control units may send and receive detection information to and from each other via the communication network 7010. ..

The image pickup apparatus of the first to sixth embodiments can be used as the image pickup unit 7410 shown in FIG. 21 or the image pickup units 7910 to 7916 shown in FIG. 22.

Although the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the technical scope of the present disclosure is not limited to such examples. It is clear that a person having ordinary knowledge in the technical field of the present disclosure can come up with various modifications or modifications within the scope of the technical ideas described in the claims. These are, of course, understood to belong to the technical scope of the present disclosure.

Further, the effects described in the present specification are merely explanatory or exemplary and are not limited. That is, the techniques according to the present disclosure may exert other effects apparent to those skilled in the art from the description herein, in addition to or in place of the above effects.

The following configurations also belong to the technical scope of the present disclosure.
(1) Includes a first pixel that photoelectrically converts light in the first wavelength band, a second pixel that photoelectrically converts light in the second wavelength band, and a third pixel that photoelectrically converts light in the third wavelength band. A pixel array unit arranged in a matrix with a pixel group as a unit, and a pixel provided corresponding to the pixel group and arranged in a region including at least one pixel excluding the first pixel of the corresponding pixel group. An image pickup device equipped with a transistor.
(2) The first to third wavelength bands are wavelength bands corresponding to red, green, and blue light, respectively, and the first to third pixels are red pixels, green pixels, and blue pixels, respectively (). The image pickup apparatus according to 1).
(3) The image pickup apparatus according to (1), wherein the pixel transistor includes a reset transistor, an amplification transistor, and a selection transistor.
(4) The image pickup apparatus according to any one of (1) to (3), wherein the pixel transistor is arranged in the region of the third pixel excluding the first pixel and the second pixel of the corresponding pixel group. ..
(5) The image pickup apparatus according to any one of (1) to (4), wherein the pixel group includes a floating diffusion shared by a plurality of pixels included in the pixel group.
(6) The image pickup apparatus according to (2), wherein the pixel transistor is arranged in the region of the blue pixel and the region of the green pixel.
(7) The image pickup apparatus according to (2), wherein the pixel transistor is arranged between the blue pixel region and the green pixel region.
(8) The image pickup apparatus according to (1) to (7), comprising a pixel separating portion extending in the depth direction of the pixels along a pixel boundary for separating the pixels included in the pixel group.
(9) The pixel group includes two pixels adjacent to each other in the first direction and two pixels adjacent to each other in the second direction intersecting the first direction, and these four pixels are the red pixel, the said. The image pickup apparatus according to (2), which includes a green pixel and the blue pixel.
(10) The image pickup apparatus according to (9), wherein the four pixels include two green pixels.
(11) One pixel transistor is shared by the two pixel groups arranged adjacent to the first direction or the second direction, and the first portion of the one pixel transistor is the two. The image pickup apparatus according to (9), wherein the second portion of the one pixel transistor is arranged on one of the pixel groups and is arranged on the other of the two pixel groups.
(12) The first portion is arranged in the region of the blue pixel of one of the two pixel groups, and the second portion is arranged in the region of the blue pixel of the other of the two pixel groups. The imaging apparatus according to (11), which is arranged.
(13) The two pixel groups are arranged adjacent to the second direction, and the first portion is arranged between the two pixel groups and along the region extending in the first direction. The image pickup apparatus according to (12), wherein the second portion is arranged at the end of the other of the two pixel groups in the second direction and along a region extending in the first direction.
(14) The two pixel groups are arranged adjacent to each other in the second direction, and the first portion is an end portion of one of the two pixel groups in the first direction and the first portion. Arranged along a region extending in two directions, the second portion was arranged at the other end of the two pixel groups in the first direction and along the region extending in the second direction (). 12) The imaging device according to the above.
(15) The pixel transistor includes a reset transistor, an amplification transistor, and a selection transistor, and the amplification transistor and the selection transistor are arranged in a region including the blue pixel of one of the two pixel groups. The image pickup apparatus according to (11), wherein the reset transistor is arranged in a region of the two pixel groups including the other blue pixel.
(16) The image pickup apparatus according to (11), wherein the pixel transistor includes a reset transistor, an amplification transistor, and a selection transistor, and the amplification transistor is arranged in both the first portion and the second portion.
(17) The pixel transistor includes a conversion efficiency switching transistor that switches the conversion efficiency of photoelectric conversion, and the conversion efficiency switching transistor is arranged in the region of the blue pixel of one or the other of the two pixel groups (17). 15) The imaging device according to the above.
(18) A first floating diffusion shared by a plurality of pixels included in one of the two pixel groups and a second floating diffusion shared by a plurality of pixels included in the other of the two pixel groups. The image pickup apparatus according to (11).
(19) A pixel separation portion extending in the depth direction of the pixels along the pixel boundary is provided to separate the first pixel group included in the two pixel groups and the plurality of pixels included in the second pixel group (19). 11) The imaging device according to the above. (20) A first pixel that includes an image pickup device and a signal processing unit that performs signal processing based on the pixel signal captured by the image pickup device, and the image pickup device photoelectrically converts light in the first wavelength band. , A pixel array unit arranged in a matrix with a pixel group including a second pixel for photoelectric conversion of light in the second wavelength band and a third pixel for photoelectric conversion of light in the third wavelength band as a unit.
An electronic device including a pixel transistor provided corresponding to the pixel group and arranged in a region including at least one pixel excluding the first pixel of the corresponding pixel group.

10, 10 ₁ , 10 ₂ ... Pixel group, 10R ... Red pixel, 10G1 ... Green pixel, 10G2 ... Green pixel, 10B ... Blue pixel, 12 ... Semiconductor area, 14R ... -Red filter, 14B ... Blue filter, 14G ... Green filter, 18 ... Microlens, 20, 20a to 20f ... Insulation film, 25R, 25G1, 25G2, 25B ... P-type impurity region , FD ... Floating diffusion, PD ... Photoelectric conversion element (photo diode), TG ... Transfer gate, AMP, AMP1, AMP2 ... Amplification transistor, RST ... Reset transistor, SEL ... Selective transistor, DMY ... Dummy transistor, FDG ... Conversion efficiency selector switch, Sub-FD ... Sub-floating diffusion, 250 ... Image pickup device, 251 ... Pixel area, 252 ... Pixel drive line , 253 ... Vertical signal line, 254 ... Vertical drive unit, 255 ... Column processing unit, 256 ... Horizontal drive unit, 257 ... System control unit, 258 ... Signal processing unit, 259 ... Memory unit, 7000 ... Vehicle control system, 7010 ... Communication network, 7100 ... Drive system control unit, 7110 ... Vehicle state detection unit, 7200 ... Body system control unit, 7300 ...・・ Battery control unit, 7310 ・・・ Secondary battery, 7400 ・・・ Vehicle outside information detection unit, 7410 ・・・ Imaging unit, 7420 ・・・ Vehicle interior information detection unit, 7500 ・・・ Vehicle interior information detection unit, 7510 ・・・ Driver status detection unit, 7600 ・・・ Integrated control unit, 7610 ・・・ Microcomputer, 7620 ・・・ General-purpose communication I / F, 7630 ・・・ Dedicated communication I / F, 7640 ・・・ Positioning unit, 7650 ... Beacon receiver, 7660 ... In-vehicle device I / F, 7670 ... Audio image output unit, 7680 ... In-vehicle network I / F, 7690 ... Storage unit, 7710 ... Audio speaker , 7720 ... Display unit, 7730 ... Instrument panel, 7750 ... External environment, 7760 ... Vehicle interior equipment, 7800 ... Input unit, 7900 ... Vehicle, 7910-7916 ... Imaging Department, 7920-7930 ... External information detection unit

Claims

A pixel group including a first pixel that photoelectrically converts light in the first wavelength band, a second pixel that photoelectrically converts light in the second wavelength band, and a third pixel that photoelectrically converts light in the third wavelength band. Pixel array unit arranged in a matrix as a unit,
A pixel transistor provided corresponding to the pixel group and arranged in a region including at least one pixel excluding the first pixel of the corresponding pixel group.
An image pickup device equipped with.
The first to third wavelength bands correspond to red, green, and blue light, respectively, and the first to third pixels are red pixels, green pixels, and blue pixels, respectively, according to claim 1. The imaging device described.
The image pickup apparatus according to claim 1, wherein the pixel transistor includes a reset transistor, an amplification transistor, and a selection transistor.
The image pickup apparatus according to claim 1, wherein the pixel transistor is arranged in a region of the third pixel excluding the first pixel and the second pixel of the corresponding pixel group.
The image pickup apparatus according to claim 1, wherein the pixel group includes a floating diffusion shared by a plurality of pixels included in the pixel group.
The image pickup apparatus according to claim 2, wherein the pixel transistor is arranged in the area of the blue pixel and the area of the green pixel.
The image pickup apparatus according to claim 2, wherein the pixel transistor is arranged between the blue pixel region and the green pixel region.
The image pickup apparatus according to claim 1, further comprising a pixel separation portion extending in the depth direction of the pixels along the pixel boundary to separate the pixels included in the pixel group.
The pixel group includes two pixels adjacent to each other in the first direction and two pixels adjacent to each other in the second direction intersecting the first direction, and these four pixels are the red pixel, the green pixel, and the like. The image pickup apparatus according to claim 2, further comprising the blue pixel.
The imaging device according to claim 9, wherein the four pixels include the two green pixels.
One pixel transistor is shared by two pixel groups arranged adjacent to each other in the first direction or the second direction.
The first portion of the one pixel transistor is arranged in one of the two pixel groups.
The image pickup apparatus according to claim 9, wherein the second portion of the one pixel transistor is arranged on the other side of the two pixel groups.
The first portion is arranged in the area of the blue pixel of one of the two pixel groups.
The imaging device according to claim 11, wherein the second portion is arranged in the region of the blue pixel of the other of the two pixel groups.
The two pixel groups are arranged adjacent to each other in the second direction.
The first portion is arranged between the two pixel groups and along the region extending in the first direction.
12. The image pickup apparatus according to claim 12, wherein the second portion is arranged at the end of the other of the two pixel groups in the second direction and along a region extending in the first direction.
The two pixel groups are arranged adjacent to each other in the second direction.
The first portion is arranged at the end of one of the two pixel groups in the first direction and along the region extending in the second direction.
12. The image pickup apparatus according to claim 12, wherein the second portion is arranged at the end of the other of the two pixel groups in the first direction and along a region extending in the second direction.
The pixel transistor includes a reset transistor, an amplification transistor, and a selection transistor.
The amplification transistor and the selection transistor are arranged in a region including the blue pixel of one of the two pixel groups.
The imaging device according to claim 11, wherein the reset transistor is arranged in a region including the blue pixel of the other of the two pixel groups.
The pixel transistor includes a reset transistor, an amplification transistor, and a selection transistor.
The image pickup apparatus according to claim 11, wherein the amplification transistor is arranged in both the first portion and the second portion.
The pixel transistor includes a conversion efficiency switching transistor that switches the conversion efficiency of photoelectric conversion.
The image pickup apparatus according to claim 15, wherein the conversion efficiency switching transistor is arranged in the region of the blue pixel of one or the other of the two pixel groups.
A first floating diffusion shared by a plurality of pixels included in one of the two pixel groups,
11. The imaging apparatus according to claim 11, further comprising a second floating diffusion shared by a plurality of pixels included in the other of the two pixel groups.
11. The 11. Imaging device.
Imaging device and
A signal processing unit that performs signal processing based on a pixel signal captured by the image pickup device is provided.
The image pickup device
A pixel group including a first pixel that photoelectrically converts light in the first wavelength band, a second pixel that photoelectrically converts light in the second wavelength band, and a third pixel that photoelectrically converts light in the third wavelength band. Pixel array unit arranged in a matrix as a unit,
A pixel transistor provided corresponding to the pixel group and arranged in a region including at least one pixel excluding the first pixel of the corresponding pixel group.
Electronic equipment equipped with.