WO2022095511A1

WO2022095511A1 - Crystalline silicon solar cell, assembly, and manufacturing method for crystalline silicon solar cell

Info

Publication number: WO2022095511A1
Application number: PCT/CN2021/108154
Authority: WO
Inventors: 崔艳峰; 黄强; 任明冲; 周学谦; 谷士斌; 蔡涔
Original assignee: 东方日升（常州）新能源有限公司
Priority date: 2020-11-04
Filing date: 2021-07-23
Publication date: 2022-05-12
Also published as: CN112331741A

Abstract

A crystalline silicon solar cell, an assembly, and a manufacturing method for the crystalline silicon solar cell, relating to the field of solar cells. The manufacturing method for the crystalline silicon solar cell comprises: a step of providing a battery unit, the battery unit being provided with a transparent conductive film located on the surface; a step of performing a slicing operation on the battery unit to form sliced battery units; and a step of manufacturing a dielectric film on the transparent conductive film on the surface of each sliced battery unit. Manufacturing a crystalline silicon solar cell by means of the method can increase the conversion efficiency of the battery, and effectively avoid efficiency loss caused by a slicing operation.

Description

A crystalline silicon solar cell, component and manufacturing method thereof

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the priority of the Chinese Patent Application No. 202011218983.8 and entitled "A Crystalline Silicon Solar Cell, Module and Method for Making the Same" filed with the China Patent Office on November 04, 2020, the entire contents of which are incorporated by reference in this application.

technical field

The present application relates to the field of solar cells, and in particular, to a crystalline silicon solar cell, a component, and a manufacturing method thereof.

Background technique

Heterojunction solar cells are recognized as the commanding heights of future photovoltaic power generation technology due to their excellent properties such as high efficiency, low decay rate, simple process, and good structural ductility. But its high cost has limited its large-scale development.

Compared with PERC cells (Passivated Emitterand Rear Contact Solar Cells), due to the excellent passivation performance of amorphous silicon, the open circuit voltage of heterojunction cells is as high as 740mV, but the current density is low. How to further improve the current density becomes the key to further improve the efficiency of heterojunction cells.

At present, the photovoltaic industry usually prepares sliced components by laser slicing to reduce power loss. However, cells formed by laser dicing operations suffer from a loss in efficiency compared to the cells before dicing, and this problem is particularly acute in heterojunction cells. The efficiency loss of the heterojunction cell is above 0.3% after laser slicing.

How to restore or reduce this part of the efficiency lost due to laser slicing has become an urgent problem to be solved.

SUMMARY OF THE INVENTION

Based on the above deficiencies, the present application provides a crystalline silicon solar cell, a module and a manufacturing method thereof, so as to partially or fully improve or solve the problems of damage and efficiency loss after the cell is cut.

This application is implemented like this:

In a first aspect, embodiments of the present application provide a method for fabricating a crystalline silicon solar cell.

The production method includes:

providing a battery having a transparent conductive film on the surface;

slicing batteries to form sliced batteries; and

A dielectric film is made on the transparent conductive film on the surface of the split cell.

Optionally, the battery is formed into two or more sliced batteries through a slicing operation; the slicing operation is realized by laser slicing.

Optionally, the battery is cut in half to form two sliced batteries, the transparent conductive film is ITO, and the dielectric film is SiN.

Optionally, the battery includes a heterojunction battery.

Optionally, heterojunction cells include:

respectively forming a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer, a first transparent conductive film and a first electrode on the front surface of the substrate;

respectively fabricating a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer, a second transparent conductive film and a second electrode on the backside of the substrate;

A dielectric film is formed on both the first transparent conductive film and the second transparent conductive film.

Optionally, the heterojunction cell includes one or more of the following limitations:

The first definition, the front side and the back side of the substrate are respectively fabricated to form a light trapping structure;

The second defined, intrinsic amorphous silicon layer and the doped amorphous silicon layer are fabricated by plasma enhanced chemical vapor deposition; the growth temperature of the intrinsic amorphous silicon layer and the doped amorphous silicon layer is 100°C to 300°C ;

The third limitation is that the transparent conductive film is produced by magnetron sputtering, reactive plasma deposition or electron beam evaporation; the growth temperature of the transparent conductive film is 25°C to 300°C;

The fourth definition, the first electrode and the second electrode are made by screen printing and curing respectively; the material of the electrode is low temperature silver paste;

The fifth definition, the dielectric thin film is produced by plasma enhanced chemical vapor deposition method or atomic layer deposition method; the growth temperature of the dielectric thin film is 25°C to 300°C.

In a second aspect, an embodiment of the present application provides a method for fabricating a crystalline silicon solar cell, including:

the step of providing a battery cell having a transparent conductive film on a surface;

the step of slicing the battery cells to form slicing battery cells; and

The step of making a dielectric film on the transparent conductive film on the surface of the segmented battery unit.

Optionally, the transparent conductive film is ITO, and the dielectric film is SiN.

Optionally, the step of providing the battery unit includes:

In the step of manufacturing the intrinsic amorphous silicon layer, a first intrinsic amorphous silicon layer and a second intrinsic amorphous silicon layer are respectively fabricated on the front and back surfaces of the substrate forming the battery unit;

The fabrication step of the doped amorphous silicon layer is to fabricate a first doped amorphous silicon layer on the first intrinsic amorphous silicon layer, and fabricate a second doped amorphous silicon layer on the second intrinsic amorphous silicon layer silicon layer;

The transparent conductive film fabrication step is to fabricate a first transparent conductive film as the transparent conductive film on the first doped amorphous silicon layer, and fabricate as the transparent conductive film on the second doped amorphous silicon layer a second transparent conductive film of the film; and

In the electrode fabrication step, a first electrode is fabricated in a part of the first transparent conductive film, and a second electrode is fabricated in a part of the second transparent conductive film.

Optionally, the light trapping structure is formed by texturing the front side and the back side of the substrate respectively.

Optionally, the step of fabricating the intrinsic amorphous silicon layer and the step of fabricating the doped amorphous silicon layer are performed by a plasma-enhanced chemical vapor deposition method, the first intrinsic amorphous silicon layer, the second The growth temperature of the two intrinsic amorphous silicon layers, the first doped amorphous silicon layer and the second doped amorphous silicon layer is 100°C to 300°C.

Optionally, in the transparent conductive film production step, the transparent conductive film is produced by a magnetron sputtering method, a reactive plasma deposition method or an electron beam evaporation method, and the growth temperature of the transparent conductive film is 25° C. to 300°C.

Optionally, in the electrode fabrication step, the first electrode and the second electrode are fabricated by screen printing and curing, respectively, and the material of the first electrode and the second electrode is a low-temperature silver paste .

Optionally, the dielectric film is fabricated by plasma-enhanced chemical vapor deposition or atomic layer deposition, and the growth temperature of the dielectric film is 25°C to 300°C.

Optionally, the battery unit is a heterojunction battery.

In a third aspect, an embodiment of the present application provides a method for fabricating a crystalline silicon solar cell module, the method comprising:

Implement the above-mentioned manufacturing method of a crystalline silicon solar cell to obtain a sliced cell coated after slicing;

Test and sort crystalline silicon solar cells, select crystalline silicon solar cells with the same efficiency, and directly carry out string welding, typesetting, lamination, gluing, framing and power testing.

In a fourth aspect, an embodiment of the present application provides a method for fabricating a crystalline silicon solar cell assembly, including:

The production step of crystalline silicon solar cell, using the above-mentioned production method of crystalline silicon solar cell to obtain the crystalline silicon solar cell;

The crystalline silicon solar cells are tested and sorted, and crystalline silicon solar cells with the same efficiency are selected for string welding, typesetting, lamination, gluing, framing and power testing.

In a fifth aspect, embodiments of the present application provide a crystalline silicon solar cell, which includes a split cell and a dielectric film. The sliced battery is formed by slicing the battery, and the surface of the sliced battery has a conductive transparent conductive film. The dielectric film is formed on the transparent conductive film on the surface of the split cell, and becomes an anti-reflection layer that traps light.

Optionally, the battery is a heterojunction battery.

In a sixth aspect, an embodiment of the present application provides a crystalline silicon solar cell, comprising:

A sliced battery unit is formed by slicing the battery unit, and the surface of the battery unit has a conductive transparent conductive film; and

The dielectric film is formed on the surface of the split battery unit and becomes an anti-reflection layer that traps light.

Description of drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art.

Fig. 1 is the structural representation of the existing slice battery;

FIG. 2 shows a schematic structural diagram of a crystalline silicon solar cell provided by an embodiment of the present application;

FIG. 3 shows a flow chart of the fabrication of the crystalline silicon solar cell module in the embodiment of the present application.

Detailed ways

The present application will be described in detail below with reference to the embodiments, but those skilled in the art will understand that the following embodiments are only used to illustrate the present application and should not be regarded as limiting the scope of the present application. If the specific conditions are not indicated in the examples, it is carried out according to the conventional conditions or the conditions suggested by the manufacturer. The reagents or instruments used without the manufacturer's indication are conventional products that can be purchased from the market.

In order to study the problems existing in sliced batteries and their components, the inventors fabricated an existing heterojunction battery and components based thereon.

The manufacturing method of the existing heterojunction battery is briefly described as follows:

Using N-type silicon wafer (represented by N-Si), cleaning and texturing;

Intrinsic amorphous silicon films (represented by α-Si(i)) are deposited on both sides (front and back) of the silicon wafer, respectively, and then doped p-type amorphous silicon films are deposited on the surfaces of the two intrinsic amorphous silicon films. (represented by α-Si(p)) and doped n-type amorphous silicon film (represented by α-Si(n));

Then deposit a transparent conductive film (eg, ITO, indium tin oxide) on both sides;

Then screen-printed low-temperature silver paste (represented by metal electrodes), dried and cured, and finally tested and sorted.

The structure of the heterojunction cell is shown in Figure 1.

A battery module based on the heterojunction battery of FIG. 1 can be produced by the following method.

For the preparation method of the heterojunction cell module, after the heterojunction cell shown in Figure 1 is tested and sorted, the sorted cells are subjected to laser slicing, string welding, typesetting, lamination, gluing, framing, and power testing.

After research, the inventor found that the above-mentioned heterojunction cell and its components have the following defects.

(1) The amount of transparent conductive film (ITO) is large. Due to the use of rare metal elements (In, indium) in ITO, the price of the target material for making ITO will increase, thereby increasing the cost of the heterojunction cell.

(2) The transparent conductive film (such as ITO) should not only play the role of carrier transport, but also play the role of light trapping as an anti-reflection film layer. However, due to the nature of ITO itself, its electrical conductivity and optical properties are trade-offs. In other words, the improvement of the electrical conductivity of ITO is at the expense of the optical transmittance, and the increase of the light transmittance leads to the decrease of the electrical conductivity. Therefore, it is difficult to balance the two.

(3) Laser slicing the heterojunction cell into sliced cells, and then making components. However, laser dicing can cause damage to heterojunction cells. For example, the efficiency of sliced cells obtained after slicing will vary. Therefore, if the cells are directly fabricated into modules after slicing, the efficiency mismatch between them will be severe, thereby reducing the overall power of the modules. If after slicing, test sorting, and then make components. Although this can avoid the mismatch of cell efficiency after slicing, such test sorting will lead to an increase in production cost.

Based on the above insight, the inventor proposes a crystalline silicon solar cell, a module and a manufacturing method thereof of the present application, which solves the efficiency damage existing after the slicing operation or caused by slicing, and the efficiency loss between the sliced cells in the module. distribution issues and component power drop issues due to efficiency mismatches.

In general, the present application relates to the modification of the structures of batteries and assemblies, and correspondingly proposes the fabrication methods of these new structures, so that those skilled in the art can more easily implement the present application.

Among them, the structure of the crystalline silicon solar cell of the present application has an antireflection layer. As mentioned above, the transparent conductive film generally uses a transparent conductive oxide thin film (eg, ITO, indium selenide oxide). In the present application, the dielectric thin film is selected to be formed on the transparent conductive film, and the dielectric thin film is selected to be formed after dicing. Therefore, in such a case, the structure of the crystalline silicon solar cell and its components in the present application has a laminated anti-reflection structure, for example, a laminated anti-reflection structure composed of ITO and SiN together.

In the present application, the laminated anti-reflection structure is fabricated after slicing, so the following advantages can be obtained.

1. The laminated anti-reflection structure can reduce the reflectivity of the crystalline silicon solar cell (correspondingly increase the incident light), thereby obtaining a crystalline silicon solar cell with an increased current density, thereby improving the efficiency of the crystalline silicon solar cell.

2. The design of the laminated anti-reflection structure can reduce the use of ITO. For example, for the pure ITO reflective layer and the laminated anti-reflection structure with the same thickness, obviously, the amount of ITO used in the laminated anti-reflection structure is less. Since the cost of SiN is lower than that of ITO, the cost of crystalline silicon solar cells and their components can be reduced.

3. In the laminated anti-reflection structure, ITO can be biased towards electrical conductivity, and optical trapping (anti-reflection or reduced reflection) can be achieved by SiN. Therefore, ITO and SiN can be adjusted correspondingly, such as microstructure or physical properties, according to their aforementioned main functions, so as to further optimize their efficacy, so that both electrical conductivity and optical properties can be taken into account. For example, by changing the refractive index and thickness of SiN, colored crystalline silicon solar cells and modules can be modulated, so as to obtain products other than single blue and blue-black, which can then be used in BIPV (Building Integrated Solar Cells) such as rooftop photovoltaics. Photovoltaic, that is, photovoltaic building integration) applications, and does not affect the efficiency of the cell.

4. After slicing, a dielectric film (such as SiN) is made. The passivation of SiN, especially the winding SiN deposited at the edge, can repair the damage caused by the slicing operation.

As far as the inventors know, the general manufacturing method of the existing heterojunction cell assembly is as follows: using an N-type silicon wafer, cleaning and texturing, depositing an intrinsic amorphous silicon film on both sides of the silicon wafer and doping p-type and n-type silicon wafers respectively. Type amorphous silicon film, then deposit transparent conductive film ITO on both sides, then screen-print low-temperature silver paste, dry and solidify, and finally test and sort. The tested and sorted cells are subjected to laser slicing, string welding, typesetting, lamination, gluing, framing, and power testing.

The manufacturing method of the crystalline silicon solar cell module of the present application: using an N-type silicon wafer, cleaning and texturing, depositing an intrinsic amorphous silicon film and a doped p-type and n-type amorphous silicon film on both sides of the N-type silicon wafer respectively, Next, the transparent conductive film ITO is deposited on both sides, then the low temperature silver paste is screen printed, dried and cured, laser sliced, deposited SiN film, and finally tested and sorted. The test sorted batteries (also called battery cells) are subjected to string welding, typesetting, lamination, gluing, framing, and power testing.

In other words, in the existing solution, a whole battery is firstly fabricated, tested and sorted, then sliced to form a segmented battery, and then a segmented battery assembly is fabricated. In the present application, a slicing operation is introduced in the battery manufacturing process, slicing is performed before the battery is finished, and then a laminated anti-reflection structure is fabricated to complete the battery preparation, and then tested and sorted, and then a segmented battery assembly is fabricated.

When the cells after the slicing operation have conditions such as efficiency loss, fluctuation, etc., the yield of the cell components obtained by the above-mentioned existing methods will be relatively lower. In the present application, the damage of the slicing is repaired by first slicing, and then the laminated anti-reflection structure is fabricated, and then the slicing is screened, thereby improving the yield of fabricated components.

A crystalline silicon solar cell, a component and a manufacturing method thereof according to the embodiments of the present application will be specifically described below:

The manufacturing method of the sliced battery proposed in the embodiments of the present application includes the following steps.

Step S101 , providing a battery (also called a battery unit), the battery unit having a transparent conductive film on the surface.

As long as the battery cell has a transparent conductive film on the surface, it can be various types of battery cells, such as a heterojunction battery cell, and those skilled in the art can select different types of battery cells as required.

The transparent conductive film can be made of various materials. Optionally, the transparent conductive film can be made of a conductive oxide as a corresponding thin film. For example, ITO thin film, IWO thin film, AZO thin film, FTO thin film, In ₂ O ₃ :ZnO thin film or SnO ₂ thin film, etc.

Step S102 , slicing the battery unit to form a slicing battery (also referred to as a slicing battery unit).

Generally, the dicing operation of battery cells is achieved by laser dicing. Slicing may be cutting the battery cell in half, or it may be cutting the battery cell into three, four, or even more pieces. The specific number of slices can be controlled according to the size before slicing and the required size after slicing, which is not specifically limited in this application.

In the embodiment of the present application, the battery unit is selected as a heterojunction battery (optionally, it can also be a PERC battery, or other types of batteries), which has the following structure.

Intrinsic amorphous silicon layers, doped amorphous silicon layers, transparent conductive films and electrodes are respectively fabricated on the front and back surfaces of the substrate.

The substrate may be N-type silicon or P-type silicon. In addition, for different types of silicon substrates, the intrinsic amorphous silicon, doped amorphous silicon, etc. can be properly adjusted (eg, thickness, conductivity type, etc.).

In the embodiments of the present application, the substrate is an N-type silicon substrate. The thickness of the intrinsic amorphous silicon layer is 1 nanometer to 10 nanometers, the thickness of the doped amorphous silicon layer is 1 nanometer to 30 nanometers, and the thickness of the transparent conductive film is 10 nanometers to 100 nanometers.

Wherein, the surface of the substrate (which may be the front side, the back side or both) has a light trapping structure. The light trapping structure can reduce the reflection of light, thereby improving the utilization rate of incident light. Generally, the light trapping structure can be obtained by means of texturing. Optionally, texturing is performed by treating the silicon substrate with an alkaline chemical solution.

Wherein, the intrinsic amorphous silicon layer and the doped amorphous silicon layer can be fabricated by a plasma-enhanced chemical vapor deposition method at a growth temperature of 100°C to 300°C. The transparent conductive film can be fabricated by using a magnetron sputtering method, a reactive plasma deposition method or an electron beam evaporation method at a growth temperature of 25°C to 300°C.

Wherein, the electrodes can be made by screen-printing and curing the low-temperature silver paste.

Step S103 , forming a dielectric film on the transparent conductive film on the surface of the segmented battery unit.

Through the above steps, sliced battery cells can be directly obtained after the dielectric films and electrodes are fabricated, without further operations such as heat treatment (eg, annealing) being performed on them.

Dielectric thin films can be fabricated by plasma-enhanced chemical vapor deposition or atomic layer deposition at a growth temperature of 25°C to 300°C. The dielectric film can be made of various suitable materials. In the embodiments of the present application, the dielectric film is a silicon nitride (SiN) film. Optionally, the material for making the dielectric film can also be selected from SiO _x , AlO ₂ , MgF ₂ and TiO ₂ .

According to the specific material, thickness, etc. of the dielectric film, its specific process parameters are different. Structurally, in the embodiment of the present application, the thickness of the electrode is much larger than the thickness of the dielectric film (for example, the thickness of the dielectric film is 1 nm to 70 nm), so that the electrode can protrude to the dielectric film layer. outside.

In the embodiment of the present application, the structure of the crystalline silicon solar cell is shown in FIG. 2 , and the flow of the crystalline silicon solar cell module fabricated based thereon is shown in FIG. 3 .

In the present application, subsequent operations (making a dielectric film) are performed after slicing to obtain sliced battery cells. The step of making the dielectric film after dicing can repair damage caused by the dicing operation.

Using the crystalline silicon solar cells produced in the embodiments of the present application, a crystalline silicon solar cell stack can be obtained by connecting a plurality of crystalline silicon solar cells (electrically in series or in parallel or in series and parallel).

In addition, optionally, before assembling the fabricated sliced batteries to make a sliced battery assembly, the sliced battery cells also need to be tested. Then, the sliced battery cells after the test are sorted, and the sliced battery cells that meet the requirements are electrically connected in series or in parallel or in series and parallel. Where "requirements" can be the electrical properties of the sliced cells, such as the same efficiency. After the sliced battery cells are serially welded, typesetting, lamination, gluing and framing are performed in sequence.

A crystalline silicon solar cell, a component and a manufacturing method thereof of the present application will be further described in detail below with reference to the embodiments.

Test Example 1

Referring to FIG. 2, a crystalline silicon solar cell has the following structure: a front electrode (represented by a metal electrode), a front silicon nitride layer (represented by SiN), a front transparent conductive oxide film layer (represented by ITO), an N-type amorphous layer Silicon (represented by α-Si(n)), front intrinsic amorphous silicon (represented by α-Si(i)), substrate layer (represented by N-Si), back intrinsic amorphous silicon (represented by α-Si) (i)), P-type amorphous silicon (represented by α-Si(p)), backside transparent conductive oxide film (represented by ITO), backside silicon nitride layer (represented by SiN), backside electrode (represented by metal electrode representation). The front electrode is in contact with the transparent conductive oxide film through the silicon nitride layer; the back electrode is in contact with the back transparent conductive oxide film through the back silicon nitride layer.

The manufacturing method of the crystalline silicon solar cell mainly includes:

S11, texturing, performing texturing treatment on the substrate silicon wafer, and using alkaline chemical solution for texturing;

S12, growing a first intrinsic amorphous silicon layer and an N-type doped amorphous silicon layer on one side of the textured substrate, and then growing a second intrinsic amorphous silicon layer and a P-type doped amorphous silicon layer on the other side of the substrate crystalline silicon layer;

S13, then deposit a first ITO thin film layer and a second ITO thin film layer on both sides of the N-type amorphous silicon layer and the P-type doped amorphous silicon layer respectively;

S14, by screen printing the low-temperature silver paste, drying and curing, forming metal grid lines as metal electrodes, thereby forming battery cells;

S15. Using a laser to cut the battery cell in half: and

S16, depositing a SiN thin film (to obtain a front silicon nitride layer and a back silicon nitride layer) to form an ITO/SiN stacked anti-reflection structure.

Comparative Example 1

The structure of the sliced battery cell of this comparative example is shown in FIG. 2 , that is, its structure is the same as that of the battery cell in Test Example 1, and the difference is only in the manufacturing method (different slicing steps). Specifically, its production method is as follows.

The production method mainly includes the following steps:

Texturing, texturing on the substrate silicon wafer, using alkaline chemical solution for texturing;

A first intrinsic amorphous silicon layer and an N-type doped amorphous silicon layer are grown on one side of the textured substrate, and then a second intrinsic amorphous silicon layer and a P-type doped amorphous silicon layer are grown on the other side of the substrate layer;

then depositing a first ITO thin film layer and a second ITO thin film layer on both sides of the N-type and P-type amorphous silicon layers respectively;

By screen printing low temperature silver paste, drying and curing, metal grid lines as metal electrodes are formed;

depositing a SiN thin film to form an ITO/SiN stacked anti-reflection structure, thereby forming a first battery cell; and

The first battery cell is cut in half using a laser.

Comparative Example 2

The battery cell structure of Comparative Example 2 is shown in FIG. 1 . 1 and 2 , the difference in structure between the sliced battery cell in Comparative Example 2 and the battery cell in Test Example 1 is that the battery cell in Comparative Example 2 does not have the front-side silicon nitride layer and the back-side nitrogen layer in Test Example 1. Silicon layer. Accordingly, the manufacturing method differs from Test Example 1 only in that S16 is not implemented. Specifically, its production method is as follows.

The production method mainly includes the following steps:

Low-temperature silver paste is screen-printed, dried and cured to form metal grid lines as metal electrodes, thereby forming a second battery unit; and

The second battery cell is cut in half using a laser.

The battery cells in Test Example 1, Comparative Example 1, and Comparative Example 2 were tested under the same conditions, and the test results are shown in Table 1.

Table 1

Among them, Isc represents the short-circuit current; Voc represents the open-circuit voltage; FF represents the fill factor; Eff represents the conversion efficiency.

In the field of photovoltaic power generation, it is very difficult to increase the conversion efficiency by 0.01%. It can be seen from Table 1 that in terms of conversion efficiency, Test Example 1 is increased by 0.12% compared to Comparative Example 1, and by 0.39% compared with Comparative Example 2, that is, the conversion efficiency of Test Example 1 is significantly improved.

The present application provides a method for manufacturing a crystalline silicon solar cell, comprising: the steps of providing a battery unit, the battery unit having a transparent conductive film on the surface; the step of slicing the battery unit to form a sliced battery unit; and the step of making a dielectric thin film on the transparent conductive film on the surface of the segmented battery unit.

In view of the situation that efficiency damage occurs after dicing operation (such as laser dicing), and the cell efficiency after dicing is different from the cell efficiency of the galvanic cell (before dicing), in this application, the dielectric film is fabricated after dicing , which can repair the damage and make up for the loss of efficiency.

The above are only preferred embodiments of the present application, and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included within the protection scope of this application.

Industrial Applicability

The present application can be applied to the field of solar cells, and provides a crystalline silicon solar cell, a component and a manufacturing method thereof, which can improve or solve problems such as damage and efficiency loss after cell cutting.

Claims

A method for manufacturing a crystalline silicon solar cell, comprising:

providing a battery having a transparent conductive film on a surface;

performing a slicing operation on the battery to form a slicing battery; and

A dielectric film is formed on the transparent conductive film on the surface of the segmented battery.
The method for manufacturing a crystalline silicon solar cell according to claim 1, wherein the cell is formed into two or more sliced cells through a slicing operation;

The slicing operation is achieved by laser slicing.
The method for fabricating a crystalline silicon solar cell according to claim 1 or 2, wherein the cell is formed by slicing into two sliced cells, the transparent conductive film is ITO, and the dielectric film is SiN.
The method for fabricating a crystalline silicon solar cell according to claim 3, wherein the cell comprises a heterojunction cell.
The method for fabricating a crystalline silicon solar cell according to claim 4, wherein the heterojunction cell comprises:

respectively forming a first intrinsic amorphous silicon layer, a first doped amorphous silicon layer, a first transparent conductive film and a first electrode on the front surface of the substrate;

respectively fabricating a second intrinsic amorphous silicon layer, a second doped amorphous silicon layer, a second transparent conductive film and a second electrode on the backside of the substrate;

A dielectric film is formed on both the first transparent conductive film and the second transparent conductive film.
The method for fabricating a crystalline silicon solar cell according to claim 5, wherein the heterojunction cell comprises one or more of the following definitions:

The first definition is that the front side and the back side of the substrate are respectively fabricated to form a light trapping structure;

The second definition, the intrinsic amorphous silicon layer and the doped amorphous silicon layer are fabricated by plasma enhanced chemical vapor deposition method; the growth temperature of the intrinsic amorphous silicon layer and the doped amorphous silicon layer is 100 °C to 300 °C;

The third limitation is that the transparent conductive film is produced by a magnetron sputtering method, a reactive plasma deposition method or an electron beam evaporation method; the growth temperature of the transparent conductive film is 25°C to 300°C;

The fourth definition, the first electrode and the second electrode are respectively produced by screen printing and curing; the material of the electrodes is low temperature silver paste;

Fifth limitation, the dielectric thin film is fabricated by plasma enhanced chemical vapor deposition method or atomic layer deposition method; the growth temperature of the dielectric thin film is 25°C to 300°C.
A method for manufacturing a crystalline silicon solar cell, comprising:

the step of providing a battery cell having a transparent conductive film on a surface;

the step of slicing the battery cells to form slicing battery cells; and

The step of making a dielectric film on the transparent conductive film on the surface of the segmented battery unit.
The method for manufacturing a crystalline silicon solar cell according to claim 7, wherein the transparent conductive film is ITO, and the dielectric film is SiN.
The method for manufacturing a crystalline silicon solar cell according to claim 7 or 8, wherein,

The step of providing battery cells includes:

In the step of manufacturing the intrinsic amorphous silicon layer, a first intrinsic amorphous silicon layer and a second intrinsic amorphous silicon layer are respectively fabricated on the front and back surfaces of the substrate forming the battery unit;

The fabrication step of the doped amorphous silicon layer is to fabricate a first doped amorphous silicon layer on the first intrinsic amorphous silicon layer, and fabricate a second doped amorphous silicon layer on the second intrinsic amorphous silicon layer silicon layer;

The transparent conductive film fabrication step is to fabricate a first transparent conductive film as the transparent conductive film on the first doped amorphous silicon layer, and fabricate as the transparent conductive film on the second doped amorphous silicon layer a second transparent conductive film of the film; and

In the electrode fabrication step, a first electrode is fabricated in a part of the first transparent conductive film, and a second electrode is fabricated in a part of the second transparent conductive film.
The method for manufacturing a crystalline silicon solar cell according to claim 9, wherein,

The light trapping structure is formed by texturing the front side and the back side of the substrate respectively.
The method for manufacturing a crystalline silicon solar cell according to claim 9 or 10, wherein,

The manufacturing step of the intrinsic amorphous silicon layer and the manufacturing step of the doped amorphous silicon layer are performed by plasma enhanced chemical vapor deposition method, the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are The growth temperature of the crystalline silicon layer, the first doped amorphous silicon layer and the second doped amorphous silicon layer is 100°C to 300°C.
The method for manufacturing a crystalline silicon solar cell according to any one of claims 9 to 11, wherein,

In the manufacturing step of the transparent conductive film, the transparent conductive film is manufactured by a magnetron sputtering method, a reactive plasma deposition method or an electron beam evaporation method, and the growth temperature of the transparent conductive film is 25°C to 300°C.
The method for manufacturing a crystalline silicon solar cell according to any one of claims 9 to 12, wherein,

In the electrode fabrication step, the first electrode and the second electrode are respectively fabricated by screen printing and curing, and the materials of the first electrode and the second electrode are low-temperature silver paste.
The method for manufacturing a crystalline silicon solar cell according to any one of claims 7 to 13, wherein,

The dielectric film is fabricated by plasma enhanced chemical vapor deposition method or atomic layer deposition method, and the growth temperature of the dielectric film is 25°C to 300°C.
The method for manufacturing a crystalline silicon solar cell according to any one of claims 7 to 14, wherein,

The battery unit is a heterojunction battery.
A method for manufacturing a crystalline silicon solar cell module, comprising:

Implement the method for manufacturing a crystalline silicon solar cell according to any one of claims 1 to 6, to obtain a sliced cell coated after slicing;

Test and sort the sliced cells coated after slicing, select crystalline silicon solar cells with the same efficiency, and directly carry out string welding, typesetting, lamination, gluing, framing and power testing.
A method for manufacturing a crystalline silicon solar cell module, comprising:

The step of manufacturing a crystalline silicon solar cell, using the method for manufacturing a crystalline silicon solar cell according to any one of claims 7 to 15 to obtain the crystalline silicon solar cell; and

The crystalline silicon solar cells are tested and sorted, and crystalline silicon solar cells with the same efficiency are selected for string welding, typesetting, lamination, gluing, framing, and power testing.
A crystalline silicon solar cell, comprising:

A segmented battery formed by slicing the battery, the surface of the segmented battery has a conductive transparent conductive film;

The dielectric thin film is formed on the transparent conductive film on the surface of the split cell, and becomes an anti-reflection layer for trapping light.
The crystalline silicon solar cell of claim 18, which is a heterojunction cell.
A crystalline silicon solar cell, comprising:

A sliced battery unit is formed by slicing the battery unit, and the surface of the battery unit has a conductive transparent conductive film; and

The dielectric film is formed on the surface of the split battery unit and becomes an anti-reflection layer that traps light.