WO2021220851A1 - Active light ray-sensitive or radiation-sensitive resin composition, active light ray-sensitive or radiation-sensitive film, mask blank, method for forming pattern, and method for producing electronic device - Google Patents
Active light ray-sensitive or radiation-sensitive resin composition, active light ray-sensitive or radiation-sensitive film, mask blank, method for forming pattern, and method for producing electronic device Download PDFInfo
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- WO2021220851A1 WO2021220851A1 PCT/JP2021/015782 JP2021015782W WO2021220851A1 WO 2021220851 A1 WO2021220851 A1 WO 2021220851A1 JP 2021015782 W JP2021015782 W JP 2021015782W WO 2021220851 A1 WO2021220851 A1 WO 2021220851A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Definitions
- the present invention relates to a sensitive light-sensitive or radiation-sensitive resin composition, a sensitive light-sensitive or radiation-sensitive film, mask blanks, a pattern forming method, and a method for manufacturing an electronic device.
- lithography method include a method of forming a resist film with a photosensitive composition, exposing the obtained film, and then developing the film.
- EB Electro Beam
- EUV Extreme ultraviolet
- Patent Document 1 describes a sensitive light-sensitive or radiation-sensitive resin composition containing a resin containing a repeating unit having a specific group and a compound that generates an acid by irradiation with active light or radiation.
- Patent Document 2 describes a positive radiation-sensitive resin composition containing a polymer having a specific structural unit and a structural unit containing a cyclic ether structure or a cyclic carbonate structure, and an acid generator.
- Patent Document 1 describes an actinic light-sensitive or radiation-sensitive resin composition capable of suppressing pattern collapse in pattern formation having a pitch of 90 nm, but in forming an ultrafine pattern having a finer pitch of 50 nm or less.
- Patent Document 2 describes a positive radiation-sensitive resin composition, but does not specifically describe ultrafineness of a pattern formed by using EB and EUV, and the pattern collapses and roughness. There is no description about performance.
- the present invention is a sensitive ray-sensitive or radiation-sensitive resin composition capable of forming a pattern capable of suppressing pattern collapse and having excellent roughness performance in an ultrafine pattern (for example, a pattern having a pitch of 50 nm or less).
- a sensitive light-sensitive or radiation-sensitive resin film formed of the radiation-sensitive resin composition, a mask blank having the above-mentioned sensitive light-sensitive or radiation-sensitive resin film, the above-mentioned sensitive light-sensitive or radiation-sensitive resin composition is to provide a pattern forming method using an object and a method for manufacturing an electronic device.
- R 1 represents a group having a cyclic structure containing a carbonic acid ester group or a group having a cyclic structure containing SO 2 groups. However, neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom.
- R 2 represents a hydrogen atom, a halogen atom, a hydroxyl group or an organic group.
- R 3 represents a hydrogen atom, a halogen atom or an alkyl group.
- L 1 represents a single bond or a divalent linking group.
- L 2 represents a single bond or a divalent linking group.
- X is -COO -, - O -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
- R 1 in the above general formula (1) is a group having a cyclic structure containing a carbonic acid ester group, or a cyclic containing SO 2 groups in which two bonds of a sulfur atom are both bonded to a carbon atom or a nitrogen atom.
- R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1).
- X ' is -COO -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
- the plurality of R 1, R 2, X' R 1, R 2, X and L 1 may be different from one another respectively the same.
- R 411 , R 412 , R 413 , R 414 and R 415 each independently represent a hydrogen atom or an alkyl group.
- p 41 and p 42 each independently represent an integer of 0 to 2. However, p 41 + p 42 ⁇ 2 is satisfied. If R 411, R 412, R 414 and R 415 there are a plurality, a plurality of R 411, R 412, R 414 and R 415 may be different from one another respectively the same.
- R 421 , R 422 , R 423 , R 424 and R 425 each independently represent a hydrogen atom or an alkyl group.
- p 43 and p 44 each independently represent an integer of 0 to 2.
- R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1). If R 1, R 2 and L 1 there are a plurality, the plurality of R 1, R 2 and L 1 may be different from one another respectively the same.
- R 1 in the general formula (5) is represented by the following general formula (6-1) or (6-2).
- R 611 , R 612 , R 613 , R 614 and R 615 each independently represent a hydrogen atom or an alkyl group.
- p 61 and p 62 each independently represent an integer of 0 to 2. However, p 61 + p 62 ⁇ 2 is satisfied. If R 611, R 612, R 614 and R 615 there are a plurality, a plurality of R 611, R 612, R 614 and R 615 may be different from one another respectively the same.
- R 621 , R 622 , R 623 , R 624 and R 625 each independently represent a hydrogen atom or an alkyl group.
- p 63 and p 64 each independently represent an integer of 0 to 2. However, p 63 + p 64 ⁇ 2 is satisfied. If R 621, R 622, R 624 and R 625 there are a plurality, a plurality of R 621, R 622, R 624 and R 625 may be different from one another respectively the same. In the general formulas (6-1) and (6-2), * represents the bonding position. [11] The actinic or radiation-sensitive resin composition according to [10], wherein R 1 in the general formula (5) is represented by the general formula (6-1).
- HA a -L a -B represented by a H compound M a1 + and M a2 + is substituted with a hydrogen atom each of the compounds represented by the represented by HA a pKa groups is less than the pKa of the groups represented by B a H.
- M b1 + and M b2 + each independently represent an organic cation
- L b represents a (nb + 1) -valent organic group
- Ab ⁇ and B b ⁇ each independently represent an anion. It represents a sex functional group
- nb represents an integer of 2 or more.
- the plurality of M b1 + and Ab ⁇ may be the same or different from each other.
- M b1 + and M b2 + of the compound represented by is substituted with hydrogen atoms, respectively (HA b) a compound represented by nb -L b -B b H, in HA b
- the pKa of the group represented is smaller than the pKa of the group represented by B b H.
- Mc + represents an organic cation
- Ac ⁇ represents an anionic functional group
- L c represents a nonionic organic moiety capable of neutralizing an acid
- nc represents 2 or more. Represents an integer.
- the plurality of Mc + and Ac ⁇ may be the same or different from each other.
- a sensitive ray-sensitive or radiation-sensitive resin composition capable of suppressing pattern collapse and forming a pattern having excellent roughness performance
- the above-mentioned sensitivity Sensitive ray-sensitive or radiation-sensitive resin film formed of a light-sensitive or radiation-sensitive resin composition
- mask blanks provided with the above-mentioned sensitive light-sensitive or radiation-sensitive resin film
- the above-mentioned sensitive light-sensitive or radiation-sensitive resin film A pattern forming method using a resin composition and a method for producing an electronic device can be provided.
- the numerical range represented by using "-" in the present specification means a range including the numerical values before and after "-" as the lower limit value and the upper limit value.
- examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
- the bonding direction of the divalent group described in the present specification is not limited unless otherwise specified.
- Y when Y is -COO- in the compound represented by the general formula "XYZ", Y may be -CO-O-, and is -O-CO-. You may. Moreover, the said compound may be "X-CO-O-Z" or "X-O-CO-Z".
- (meth) acrylic is a general term including acrylic and methacryl, and means “at least one of acrylic and methacrylic”.
- (meth) acrylic acid means “at least one of acrylic acid and methacrylic acid”.
- the term “active light” or “radiation” refers to, for example, the emission line spectrum of a mercury lamp, far ultraviolet rays typified by an excimer laser, extreme ultraviolet rays (EUV: Extreme Ultraviolet), X-rays, and electron beams (EB:). It means Electron Beam) and the like.
- the term “light” means active light or radiation.
- exposure refers to not only exposure to the emission line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays, X-rays, EUV, etc., but also electron beams and ions. It also includes drawing with particle beams such as beams.
- the weight average molecular weight (Mw), number average molecular weight (Mn), and dispersity (also referred to as molecular weight distribution) (Mw / Mn) of the resin are GPC (Gel Permeation Chromatography) apparatus (HLC manufactured by Toso Co., Ltd.).
- 1 ⁇ is 1 x 10-10 m.
- the acid dissociation constant (pKa) represents pKa in an aqueous solution, and specifically, using the following software package 1, the value based on the Hammett substituent constant and the database of publicly known literature values is used. , It is a value obtained by calculation.
- the values of pKa described in the present specification are all values obtained by calculation using software package 1 except for the cases described later.
- pKa can also be obtained by the molecular orbital calculation method.
- a specific method for this there is a method of calculating H + dissociation free energy in a solvent based on a thermodynamic cycle.
- water is usually used as the solvent, and DMSO (dimethyl sulfoxide) is used when pKa cannot be obtained with water.
- the calculation method of H + dissociation free energy can be calculated by, for example, DFT (density functional theory), but various other methods have been reported in the literature and are not limited thereto.
- DFT density functional theory
- There are a plurality of software capable of performing DFT and examples thereof include Gaussian16.
- pKa in the present specification refers to a value obtained by calculating a value based on a database of Hammett's substituent constants and known literature values using software package 1, and pKa is calculated by this method. If it cannot be calculated, the value obtained by Gaussian 16 based on DFT (Density Functional Theory) shall be adopted.
- DFT Density Functional Theory
- the notation that does not describe substitution or non-substitution includes a group having a substituent as well as a group having no substituent.
- the "alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
- the "organic group” in the present specification means a group containing at least one carbon atom.
- the type of the substituent, the position of the substituent, and the number of the substituents when "may have a substituent” are not particularly limited.
- the number of substituents may be, for example, one, two, three, or more.
- the substituent include a monovalent non-metal atomic group excluding a hydrogen atom, and for example, the following substituent T can be selected.
- substituent T examples include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom; alkoxy group such as methoxy group, ethoxy group and tert-butoxy group; aryloxy group such as phenoxy group and p-tolyloxy group; Alkoxycarbonyl groups such as methoxycarbonyl group, butoxycarbonyl group and phenoxycarbonyl group; acyloxy groups such as acetoxy group, propionyloxy group and benzoyloxy group; acetyl group, benzoyl group, isobutyryl group, acryloyl group, methacryloyl group and metoxalyl group and the like.
- halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom
- alkoxy group such as methoxy group, ethoxy group and tert-butoxy group
- aryloxy group such as
- the actinic or radiation-sensitive resin composition of the present invention (hereinafter, also referred to as “composition of the present invention”) will be described.
- the composition of the present invention is typically a resist composition, which may be a positive resist composition or a negative resist composition. Further, it may be a resist composition for alkaline development or a resist composition for organic solvent development.
- the composition of the present invention is preferably a chemically amplified resist composition.
- the composition of the present invention comprises a resin (A) containing a repeating unit (1a) represented by the general formula (1) and a repeating unit (1b) having an acid-degradable group, and an acid by irradiation with active light or radiation. Is contained with the compound (B) that generates the above.
- the compound (B) that generates the above.
- the "falling front width” means a line width that can be formed (resolved) without the line portion falling.
- the composition of the present invention contains a resin (A) containing a repeating unit (1a) represented by the general formula (1).
- Repeating unit (1a) is represented by R 1, polar moderately high, and has a group having a cyclic structure containing a carbonate group, or a group having a cyclic structure containing an SO 2 group.
- a compound also referred to as a "photoacid generator” that generates an acid by irradiation with active light or radiation contained in a sensitive light-sensitive or radiation-sensitive resin composition has a polar group or has a polar group. Since it is an ionic compound, it tends to agglomerate between photoacid generators.
- the highly polar R 1 of the resin (A) interacts with the compound (B) to suppress the aggregation of the compound (B). Therefore, in the sensitive light-sensitive or radiation-sensitive film (typically a resist film) formed by the composition of the present invention, it is considered that the photoacid generator can be uniformly present and the roughness performance is improved. Be done.
- the R 1 of the resin (A) has a polarity sufficient to suppress the aggregation of the photoacid generator as described above, but the polarity is not too high, so that development failure is unlikely to occur, and the resin (A) Compatibility with the non-polar unit in A) (for example, the acid-degradable group in the repeating unit (1b) having an acid-degradable group) can also be maintained. Therefore, it is considered that the roughness performance is further improved. In this way, it is presumed that the excellent roughness performance makes the distance between adjacent patterns in the obtained pattern more uniform, so that the capillary force applied between the adjacent patterns is made uniform and pattern collapse can be suppressed. NS.
- the repeating unit (1a) contained in the resin (A) has one benzene ring in its structure.
- the glass transition point (Tg) of the obtained sensitive light-sensitive or radiation-sensitive film is lowered, and the acid generated from the photoacid generator is easily diffused, so that the roughness performance is improved. It gets worse. Further, it is considered that the insufficient strength of the obtained pattern causes the etching resistance to deteriorate and the pattern to collapse easily.
- composition of the present invention contains a resin (A) containing a repeating unit (1a) represented by the following general formula (1) and a repeating unit (1b) having an acid-degradable group.
- R 1 represents a group having a cyclic structure containing a carbonic acid ester group or a group having a cyclic structure containing SO 2 groups. However, neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom.
- R 2 represents a hydrogen atom, a halogen atom, a hydroxyl group or an organic group.
- R 3 represents a hydrogen atom, a halogen atom or an alkyl group.
- L 1 represents a single bond or a divalent linking group.
- L 2 represents a single bond or a divalent linking group.
- X is -COO -, - O -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
- R 1 is a group having a cyclic structure containing a carbonic acid ester group (a group represented by the following formula (G1)) or two SO groups (a group represented by the following formula (G2)). Represents a group having a cyclic structure containing.
- * 1 to * 4 represent the coupling position.
- neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom. That is, neither * 3 nor * 4 in the formula (G2) represents the bond position with the oxygen atom.
- both of the two bonds of the sulfur atom in the SO 2 group are bonded to the carbon atom or the nitrogen atom. That is, it is preferable that * 3 and * 4 in the formula (G2) independently represent the bond positions with the carbon atom or the nitrogen atom, respectively.
- R 1 in the general formula (1) is a group having a cyclic structure containing a carbonic acid ester group, or a cyclic structure containing SO 2 groups in which two bonds of a sulfur atom are both bonded to a carbon atom or a nitrogen atom. It is preferable to represent a group having.
- the number of atoms (number of ring member atoms) that contribute to ring formation is preferably 4 to 15, more preferably 4 to 10, and even more preferably 4 to 8.
- Type of atoms contributing to ring formation than 2 group carbonic acid ester group and SO is not particularly limited, (it may be a carbonyl carbon) of carbon atoms, oxygen atom, sulfur atom, nitrogen atom and the like, carbon atoms Is preferable.
- the cyclic structure of R 1 may be monocyclic or polycyclic, but is preferably monocyclic.
- the cyclic structure of R 1 is preferably composed of a carbonic acid ester group or SO 2 group and a hydrocarbon group.
- Ring structure of R 1 is preferably a structure in which a portion of the hydrocarbon group in the cycloalkyl or cycloalkenyl group or a monocyclic or polycyclic is replaced by carbonate group or a SO 2 group.
- Cyclic structure R 1 is, part of the hydrocarbon group carbonate group in monocyclic cycloalkyl group, or a structure substituted with a SO 2 group, examples of the cycloalkyl group, having 4 to 15 carbon atoms
- examples of the cycloalkyl group having 4 to 15 carbon atoms
- examples thereof include a cycloalkyl group, preferably a cycloalkyl group having 4 to 10 carbon atoms, more preferably a cycloalkyl group having 4 to 8 carbon atoms, and specifically, a cyclobutyl group, a cyclopentyl group, or a cyclohexyl group.
- Cyclic structure R 1 is, in part in polycyclic cycloalkyl group hydrocarbon group carbonate group, or a structure substituted with a SO 2 group, examples of the cycloalkyl group, having 4 to 15 carbon atoms Cycloalkyl groups are mentioned, and cycloalkyl groups having 4 to 10 carbon atoms are preferable.
- the cycloalkyl group preferably has a 5- or 6-membered ring structure.
- Examples of the polycyclic cycloalkyl group having a 5- or 6-membered ring structure include a tricyclodecanyl group and a bicyclo [4,3,0] nonyl group.
- the cyclic structure of R 1 may further have a substituent.
- the further substituent is not particularly limited, and examples thereof include the above-mentioned substituent T.
- R 2 represents a hydrogen atom, a halogen atom, a hydroxyl group or an organic group.
- halogen atom when R 2 represents a halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
- R 2 represents an organic group
- the organic group is not particularly limited, and specific examples thereof include an alkyl group and a cycloalkyl group.
- the alkyl group may be linear or branched, preferably having 1 to 20 carbon atoms, more preferably 1 to 15 carbon atoms, further preferably 1 to 10 carbon atoms, and methyl. Groups are particularly preferred.
- the cycloalkyl group may be monocyclic or polycyclic, and preferably has 3 to 20 carbon atoms, and more preferably 5 to 15 carbon atoms.
- the organic group may further have a substituent.
- the further substituent is not particularly limited, but the above-mentioned Substituent T is preferable, a halogen atom is more preferable, and a fluorine atom is further preferable.
- R 2 represents an organic group
- the organic group is preferably an alkyl group, more preferably a fluorine-substituted or unsubstituted alkyl group having 1 to 3 carbon atoms, and a methyl group or a trifluoromethyl group. Is even more preferable.
- R 2 is preferably a hydrogen atom, a fluorine atom, a hydroxyl group, a methyl group or a trifluoromethyl group, and more preferably a hydrogen atom.
- R 3 represents a hydrogen atom, a halogen atom or an alkyl group.
- halogen atom when R 3 represents a halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
- R 3 represents an alkyl group
- examples of the alkyl group include a linear or branched alkyl group having 1 to 12 carbon atoms, and a methyl group or an ethyl group is preferable, and a methyl group is more preferable.
- the alkyl group has a substituent, the substituent includes the above-mentioned Substituent T, which is preferably a halogen atom and more preferably a fluorine atom.
- R 3 is preferably a hydrogen atom, a fluorine-substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, or a fluorine atom, and more preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a fluorine atom. , Hydrogen atom or methyl group is more preferable.
- L 1 represents a single bond or a divalent linking group.
- Examples of the alkylene group in which L 1 represents an alkylene group include a chain or branched alkylene group having 1 to 18 carbon atoms, and specifically, a methylene group, an ethylene group, an n-propylene group, and i-. Examples thereof include a propylene group, an n-butylene group, an n-hexylene group and an n-octylene group.
- the alkylene group is preferably an alkylene group having 1 to 3 carbon atoms, more preferably a methylene group or an ethylene group, and even more preferably a methylene group.
- the alkylene group may have a substituent, and examples of the substituent when the alkylene group has a substituent include the above-mentioned Substituent T.
- L 2 represents a single bond or a divalent linking group.
- Examples of the alkylene group when L 2 represents an alkylene group include the alkylene group mentioned as L 1 , and the same applies to preferred examples.
- the alkylene group may have a substituent, and examples of the substituent when the alkylene group has a substituent include the above-mentioned Substituent T.
- L 2 is a single bond, it is preferable because it is possible to prevent a decrease in Tg by maintaining the rigidity in the vicinity of the main chain of the resin (A).
- X is O -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 is hydrogen Represents an atom or an alkyl group.
- R 4 represents an alkyl group
- the alkyl group may be linear or branched, preferably having 1 to 20 carbon atoms, and more preferably 1 to 10 carbon atoms.
- R 4 is preferably a hydrogen atom.
- X more preferably represents -COO-, -O- or -SO 3-, and particularly preferably -COO- or -O-.
- m 1 preferably represents 1 or 2, and more preferably 1. That is, n 1 preferably represents 4 or 3, and more preferably 4.
- the repeating unit (1a) represented by the general formula (1) is preferably a repeating unit represented by the following general formula (2).
- R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1), respectively.
- X ' is -COO -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
- the plurality of R 1, R 2, X' R 1, R 2, X and L 1 may be different from one another respectively the same.
- R 2, R 3, L 1, m 1 and n 1 are respectively synonymous with R 2, R 3, L 1 , m 1 and n 1 in the general formula (1) The same applies to preferred examples.
- R 1 in the general formula (2) is synonymous with R 1 in the general formula (1).
- R 1 is preferably represented by the following general formula (4-1) or (4-2).
- R 411 , R 412 , R 413 , R 414 and R 415 each independently represent a hydrogen atom or an alkyl group.
- p 41 and p 42 each independently represent an integer of 0 to 2. However, p 41 + p 42 ⁇ 2 is satisfied. If R 411, R 412, R 414 and R 415 there are a plurality, a plurality of R 411, R 412, R 414 and R 415 may be different from one another respectively the same.
- R 421 , R 422 , R 423 , R 424 and R 425 each independently represent a hydrogen atom or an alkyl group.
- p 43 and p 44 each independently represent an integer of 0 to 2.
- R 421, R 422, R 424 and R 425 there are a plurality a plurality of R 421, R 422, R 424 and R 425 may be different from one another respectively the same.
- * represents the bonding position.
- R 411 , R 412 , R 413 , R 414 and R 415 in the general formula (4-1) represent an alkyl group
- the alkyl group has a linear or branched carbon number of 1 to 12.
- Alkyl groups are mentioned, and a methyl group or an ethyl group is preferable, and a methyl group is more preferable.
- the alkyl group has a substituent
- the substituent includes the above-mentioned Substituent T, which is preferably a halogen atom and more preferably a fluorine atom.
- R 411 , R 412 , R 413 , R 414 and R 415 are preferably hydrogen atoms.
- p 41 and p 42 preferably represent 0 or 1, respectively, and one represents 0 and the other represents 1, or both represent 1. It is preferable that one represents 0 and the other represents 1.
- R 421 , R 422 , R 423 , R 424 and R 425 in the general formula (4-2) represent an alkyl group
- the alkyl group in the above general formula (4-1) is R 411 , R 412. , R 413 , R 414 and R 415 are described as alkyl groups when they represent alkyl groups, and preferred examples thereof are also the same.
- R 421 , R 422 , R 423 , R 424 and R 425 are preferably hydrogen atoms.
- p 43 and p 44 preferably represent 0 or 1, respectively, and one represents 0 and the other represents 1, or both represent 1. It is preferable that one represents 0 and the other represents 1.
- R 1 is a group represented by the above general formula (4-1).
- X ' is -COO -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 -, or -C (CF 3) 2 O- and represents, R 4 is a hydrogen atom or Represents an alkyl group.
- R 4 has the same meaning as the R 4 described in the general formula (1), and the same applies to preferred examples.
- X' is preferably -COO- or -SO 3- , and more preferably -COO-.
- repeating unit (1a) represented by the above general formula (1) is a repeating unit represented by the following general formula (5).
- R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1), respectively. If R 1, R 2 and L 1 there are a plurality, the plurality of R 1, R 2 and L 1 may be different from one another respectively the same.
- R 2, R 3, L 1, m 1 and n 1 are respectively synonymous with R 2, R 3, L 1 , m 1 and n 1 in the general formula (1) The same applies to preferred examples.
- R 1 in the general formula (5) is synonymous with R 1 in the general formula (1).
- R 1 is preferably a group represented by the following general formula (6-1) or (6-2).
- R 611 , R 612 , R 613 , R 614 and R 615 each independently represent a hydrogen atom or an alkyl group.
- p 61 and p 62 each independently represent an integer of 0 to 2. However, p 61 + p 62 ⁇ 2 is satisfied. If R 611, R 612, R 614 and R 615 there are a plurality, a plurality of R 611, R 612, R 614 and R 615 may be different from one another respectively the same.
- R 621 , R 622 , R 623 , R 624 and R 625 each independently represent a hydrogen atom or an alkyl group.
- p 63 and p 64 each independently represent an integer of 0 to 2. However, p 63 + p 64 ⁇ 2 is satisfied. If R 621, R 622, R 624 and R 625 there are a plurality, a plurality of R 621, R 622, R 624 and R 625 may be different from one another respectively the same. In the general formulas (6-1) and (6-2), * represents the bonding position.
- R 611 , R 612 , R 613 , R 614 , R 615 , p 61 and p 62 in the general formula (6-1) are R 411 , R 412 and R 413 in the general formula (4-1), respectively. , R 414 , R 415 , p 41 and p 42, and so are the preferred examples.
- R 621 , R 622 , R 623 , R 624 , R 625 , p 63 and p 64 in the general formula (6-2) are R 421 , R 422 and R 423 in the general formula (4-2), respectively. , R 424 , R 425 , p 43 and p 44, and so are the preferred examples.
- R 1 is a group represented by the general formula (6-1).
- the resin (A) is further selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group, which will be described later. It is particularly preferable to include a repeating unit (1c) having.
- repeating unit (1a) represented by the general formula (1) Specific examples of the repeating unit (1a) represented by the general formula (1) are shown below, but the present invention is not limited thereto.
- the repeating unit (1a) may be used alone or in combination of two or more.
- the content of the repeating unit (1a) in the resin (A) is preferably 5 to 75% by mass, more preferably 5 to 70% by mass, based on all the repeating units of the resin (A). It is more preferably 10 to 60% by mass.
- the resin (A) contains a repeating unit (1b) having an acid-degradable group.
- the acid-degradable group preferably has a structure in which the polar group is protected by a group (leaving group) that is eliminated by the action of an acid.
- the polar group include a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonylimide group, a (alkylsulfonyl) (alkylcarbonyl) methylene group, and (alkylsulfonyl) (alkylcarbonyl).
- Imid group bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, and tris (alkylsulfonyl)
- acidic groups such as methylene groups (typically, groups dissociating in a 2.38 mass% tetramethylammonium hydroxide aqueous solution), alcoholic hydroxyl groups and the like.
- the alcoholic hydroxyl group is a hydroxyl group bonded to a hydrocarbon group and refers to a hydroxyl group other than the hydroxyl group directly bonded on the aromatic ring (phenolic hydroxyl group), and the ⁇ -position of the hydroxyl group is electron attraction such as a fluorine atom. Excludes aliphatic alcohols substituted with sex groups (eg, hexafluoroisopropanol groups).
- the alcoholic hydroxyl group is preferably a hydroxyl group having a pKa (acid dissociation constant) of 12 or more and 20 or less.
- a carboxyl group a phenolic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), or a sulfonic acid group is preferable.
- Examples of the group desorbed by the action of an acid include groups represented by the formulas (Y1) to (Y4).
- Equation (Y1): -C (Rx 1 ) (Rx 2 ) (Rx 3 ) Equation (Y2): -C ( O) OC (Rx 1 ) (Rx 2 ) (Rx 3 ) Equation (Y3): -C (R 36 ) (R 37 ) (OR 38 )
- Rx 1 to Rx 3 are independently alkyl groups (linear or branched chain), cycloalkyl groups (monocyclic or polycyclic), or aryl groups (monocyclic or polycyclic), respectively. Represents monocyclic or polycyclic). Among them, Rx 1 to Rx 3 preferably independently represent a linear or branched alkyl group, and Rx 1 to Rx 3 each independently represent a linear alkyl group. Is more preferable. Two of Rx 1 to Rx 3 may be combined to form a monocyclic or polycyclic ring.
- the alkyl group of Rx 1 to Rx 3 is not particularly limited, and examples thereof include an alkyl group having 1 to 20 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, and an isobutyl group. Further, an alkyl group having 1 to 4 carbon atoms such as a t-butyl group is preferable.
- the cycloalkyl group of Rx 1 to Rx 3 is not particularly limited, and examples thereof include a cycloalkyl group having 3 to 20 carbon atoms, a cyclopentyl group, a monocyclic cycloalkyl group such as a cyclohexyl group, and a norbornyl group. , Tetracyclodecanyl group, tetracyclododecanyl group, and polycyclic cycloalkyl group such as adamantyl group are preferable.
- the aryl group of Rx 1 to Rx 3 is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group.
- the alkyl group, cycloalkyl group, and aryl group may have a substituent.
- Examples of the cycloalkyl group formed by combining two of Rx 1 to Rx 3 include a cyclopentyl group, a monocyclic cycloalkyl group such as a cyclohexyl group, and a norbornyl group, a tetracyclodecanyl group, and a tetracyclododeca.
- a polycyclic cycloalkyl group such as an nyl group and an adamantyl group is preferable, and a monocyclic cycloalkyl group having 5 to 6 carbon atoms is more preferable.
- the cycloalkyl group formed by combining two of Rx 1 to Rx 3 is, for example, a group in which one of the methylene groups constituting the ring has a hetero atom such as an oxygen atom or a hetero atom such as a carbonyl group. It may be replaced.
- the cycloalkyl group formed by bonding two of Rx 1 to Rx 3 may have a substituent.
- R 36 to R 38 each independently represent a hydrogen atom or a monovalent organic group.
- R 37 and R 38 may be combined with each other to form a ring.
- the monovalent organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkenyl group and the like. It is also preferable that R 36 is a hydrogen atom.
- LY3 and LY4 independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a group in which these are combined (for example, a group in which an alkyl group and an aryl group are combined).
- .. M represents a single bond or a divalent linking group.
- Q is an alkyl group that may contain a hetero atom, a cycloalkyl group that may contain a hetero atom, an aryl group that may contain a hetero atom, an amino group, an ammonium group, a mercapto group, a cyano group, and an aldehyde.
- the alkyl group and the cycloalkyl group for example, one of the methylene groups may be replaced with a heteroatom such as an oxygen atom or a group having a heteroatom such as a carbonyl group.
- one of LY3 and LY4 is a hydrogen atom and the other is an alkyl group, a cycloalkyl group, an aryl group, or a group in which an alkylene group and an aryl group are combined.
- LY4 is preferably a secondary or tertiary alkyl group, and more preferably a tertiary alkyl group.
- the secondary alkyl group include an isopropyl group, a cyclohexyl group and a norbornyl group
- examples of the tertiary alkyl group include a tert-butyl group and an adamantan group.
- Tg glass transition temperature
- activation energy are high, so that in addition to ensuring the film strength, fog can be suppressed.
- Ar represents an aromatic ring group.
- Rn represents an alkyl group, a cycloalkyl group or an aryl group.
- Rn and Ar may be combined with each other to form a non-aromatic ring.
- Ar is more preferably an aryl group.
- the repeating unit (1b) having an acid-decomposable group is preferably a repeating unit represented by the following general formula (A).
- L 1A represents a divalent linking group
- R 1A to R 3A independently represent a hydrogen atom or a monovalent substituent
- R 4A is decomposed and eliminated by the action of an acid.
- L 1A represents a divalent linking group.
- the divalent linking group include -CO- , -O-, -S-, -SO-, -SO 2- , a hydrocarbon group (for example, an alkylene group, a cycloalkylene group, an alkaneylene group, an arylene group, etc.).
- a linking group in which a plurality of these are linked can be mentioned.
- L 1A -CO- and an arylene group are preferable as L 1A.
- a phenylene group is preferable.
- the alkylene group may be linear or branched. The number of carbon atoms of the alkylene group is not particularly limited, but 1 to 10 is preferable, and 1 to 3 is more preferable.
- R 1A to R 3A independently represent a hydrogen atom or a monovalent substituent.
- the monovalent substituent include an alkyl group, a cycloalkyl group, and a halogen atom.
- the alkyl group may be linear or branched.
- the number of carbon atoms of the alkyl group is not particularly limited, but 1 to 10 is preferable, and 1 to 3 is more preferable.
- the cycloalkyl group may be monocyclic or polycyclic.
- the number of carbon atoms of this cycloalkyl group is preferably 3 to 8.
- the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
- R 4A represents a group (leaving group) that is eliminated by the action of an acid.
- examples of the leaving group include groups represented by the above formulas (Y1) to (Y4), and groups represented by the above formula (Y3) are preferable.
- the substituents include, for example, an alkyl group (1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group. (2 to 6 carbon atoms) and the like.
- the number of carbon atoms in the substituent is preferably 8 or less.
- repeating unit (1b) having an acid-decomposable group is a repeating unit represented by the following general formula (3).
- X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
- Z represents a group having a group that is eliminated by the action of an acid.
- X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
- the alkyl group includes a linear or branched alkyl group having 1 to 12 carbon atoms, and a methyl group, an ethyl group, an n-propyl group, or an i-propyl group.
- a methyl group or an ethyl group is more preferable, and a methyl group is further preferable.
- substituents when the alkyl group has a substituent include the substituent described in the Substituent T, which is preferably a halogen atom and more preferably a fluorine atom.
- halogen atom when X 3 represents a halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
- X 3 is preferably a hydrogen atom, a fluorine-substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, or a fluorine atom, a methyl group, and more preferably a trifluoromethyl group or a fluorine atom.
- Z represents a group having a group eliminated by the action of an acid.
- the polar group in the structure (acid-degradable group) in which the polar group is protected by the leaving group desorbed by the action of an acid is a carboxylic acid group.
- Z may be the leaving group itself. That is, in this case, a structure (acid-degradable group) in which the polar group (carboxylic acid group) is protected by the leaving group (Z) is formed, and -COO-Z in the general formula (3) is an acid-degradable group as a whole. Consists of. Further, a part of Z in the general formula (3) may contain an acid-degradable group whose polar group is a carboxylic acid group, or Z as a whole is an acid-degradable group whose polar group is a carboxylic acid group. May be configured. Examples of the leaving group that are eliminated by the action of an acid include groups represented by the above formulas (Y1) to (Y4).
- the non-aromatic ring in the non-aromatic ring in the non-aromatic ring, from the viewpoint of excellent acid decomposition property of the repeating unit, it is also preferable that the ring member atom adjacent to the ring member atom directly bonded to the polar group (or its residue) does not have a halogen atom such as a fluorine atom as a substituent.
- Other leaving groups that are eliminated by the action of an acid include a 2-cyclopentenyl group having a substituent (alkyl group, etc.) such as a 3-methyl-2-cyclopentenyl group, and 1,1,4.
- a cyclohexyl group having a substituent (alkyl group, etc.) such as 4-tetramethylcyclohexyl group may be used.
- the repeating unit (1b) is a repeating unit in which Z in the general formula (3) is represented by the above formula (Y1), that is, a repeating unit (1b-1) represented by the following general formula (3-1). It is preferable to have.
- X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
- R Z1 to R Z3 independently represent an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group. Any two of R Z1 to R Z3 may be bonded to form a ring structure.
- X 3 in the general formula (3-1) has the same meaning as X 3 in the general formula (3), and the same applies to preferred examples.
- R Z1 to R Z3 in the general formula (3-1) are synonymous with Rx 1 to Rx 3 in the above formula (Y-1), and preferred examples are also the same.
- the repeating unit (1b) is more preferably a repeating unit (1b-2) represented by the following general formula (3-2).
- X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
- R 3b represents an alkyl group, a cycloalkyl group, or an aryl group.
- m 3 represents an integer of 1 or more.
- X 3 in the general formula (3-2) has the same meaning as X 3 in the general formula (3), and the same applies to preferred examples.
- R 3b represents an alkyl group, a cycloalkyl group, or an aryl group.
- the alkyl group, cycloalkyl group, and aryl group may have a substituent.
- R 3b represents an alkyl group
- the alkyl group and the substituent that the alkyl group may have include an alkyl group as Rx 1 to Rx 3 in the above formula (Y-1) and an alkyl group.
- Substituents may be mentioned, and preferred examples are the same.
- Examples of the cycloalkyl group when R 3b represents a cycloalkyl group include cycloalkyl groups as Rx 1 to Rx 3 in the above formula (Y-1), and preferred examples thereof are also the same.
- Examples of the aryl group when R 3b represents an aryl group include aryl groups as Rx 1 to Rx 3 in the above formula (Y-1), and a phenyl group or a naphthyl group is preferable.
- R 3b is preferably a linear or branched alkyl group, more preferably a methyl group, an ethyl group, an i-propyl group, an n-butyl group, a t-butyl group, or a cyclohexyl group. More preferably, it is a methyl group, an ethyl group, an i-propyl group, or a t-butyl group.
- m 3 represents an integer of 1 or more. m 3 is preferably 1 to 10, more preferably 1 to 6, and even more preferably 3 or 4.
- the repeating unit (1b) having an acid-decomposable group is illustrated below, but the present invention is not limited thereto.
- the repeating unit (1b) may be used alone or in combination of two or more.
- the content of the repeating unit (1b) is preferably 20 to 80% by mass, more preferably 25 to 70% by mass, and 30 to 70% by mass with respect to all the repeating units of the resin (A). Is more preferable.
- the resin (A) further preferably contains a repeating unit (1c) having at least one selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group.
- the repeating unit (1c) is a repeating unit different from the repeating unit (1a) and the repeating unit (1b).
- the repeating unit (1a) includes the highly polar R 1 , but the repeating unit (1b) is typically less polar. Therefore, by including the repeating unit (1c) having a polarity between the repeating unit (1a) and the repeating unit (1b), each repeating unit of the resin (A) is contained in the film formed from the composition of the present invention. It is considered that the state of existence becomes more uniform, the uniformity of the distribution of the compound (B) increases, and the effect of suppressing the aggregation of the compound (B) becomes more remarkable.
- the lactone structure may have a lactone ring, and a lactone structure having a 5- to 7-membered lactone ring is preferable.
- a lactone structure in which a 5- to 7-membered ring lactone ring is fused with another ring to form a bicyclo structure or a spiro structure is also preferable.
- a sultone structure in which another ring is condensed into a 5- to 7-membered sultone ring in the form of forming a bicyclo structure or a spiro structure is also preferable.
- the resin (A) preferably contains a repeating unit having a lactone structure represented by any of the following general formulas (LC1-1) to (LC1-22). Further, the lactone structure may be directly bonded to the main chain. Among them, the general formula (LC1-1), the general formula (LC1-4), the general formula (LC1-5), the general formula (LC1-8), the general formula (LC1-16), and the general formula (LC1-21). Alternatively, a lactone structure represented by the general formula (LC1-22) is preferable.
- the lactone structure may or may not have a substituent (Rb 2).
- substituent (Rb 2 ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 2 to 8 carbon atoms, and a carboxy group.
- a halogen atom, a hydroxyl group, a cyano group or the like is preferable, and an alkyl group having 1 to 4 carbon atoms or a cyano group is more preferable.
- n 2 represents an integer from 0 to 4. When n 2 is 2 or more, the plurality of substituents (Rb 2 ) may be the same or different. Further, a plurality of existing substituents (Rb 2 ) may be bonded to each other to form a ring.
- a repeating unit having a lactone structure a repeating unit represented by the following general formula (LS1) is preferable.
- a LS represents an ester bond (-COO- group represented by) or an amide bond (a group represented by -CONH-).
- t is the number of repetitions of the structure represented by ⁇ R LS2 ⁇ R LS3 ⁇ , represents an integer of 0 to 5, is preferably 0 or 1, and more preferably 0.
- (-R LS2- R LS3- ) t is a single bond.
- R LS2 represents an alkylene group, a cycloalkylene group, or a combination thereof. When a plurality of R LS2s are present, the plurality of R LS2s may be the same or different from each other.
- the alkylene group or cycloalkylene group of RLS2 may have a substituent.
- RLS3 represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond, or a urea bond.
- the plurality of R LS3s may be the same or different from each other.
- R LS3 is preferably an ether bond or an ester bond, and more preferably an ester bond.
- RLS4 represents a monovalent organic group having a lactone structure.
- one hydrogen atom is removed from one carbon atom constituting the lactone structure. It is preferably a group consisting of It is preferable that the carbon atom from which one hydrogen atom is removed is not a carbon atom constituting a substituent (Rb 2).
- RLS1 represents a hydrogen atom, a halogen atom, or a monovalent organic group (preferably a methyl group).
- the repeating unit having a lactone structure As a specific example of the repeating unit having a lactone structure, the description in paragraph [0088] of International Publication No. 2018/193954 can be taken into consideration, and these contents are incorporated in the present specification. Further, the resin (A) of the present invention may have a repeating unit having a lactone structure other than the above.
- hydroxyl group examples include an alcoholic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), and a phenolic hydroxyl group.
- the repeating unit having an alcoholic hydroxyl group is preferably a repeating unit represented by the general formula (A5).
- X Q5 represents a hydrogen atom, a halogen atom, or a monovalent organic group (preferably a methyl group).
- RQ5 represents an alkylene group (linear or branched chain, preferably 1 to 5 carbon atoms) or a non-aromatic ring group.
- Examples of the non-aromatic ring group include a monocyclic hydrocarbon ring group and a polycyclic hydrocarbon ring group.
- Examples of the monocyclic hydrocarbon ring group include a cycloalkane ring group having 3 to 12 carbon atoms (preferably 3 to 7 carbon atoms) and a cycloalkene ring group having 3 to 12 carbon atoms.
- Examples of the polycyclic hydrocarbon ring group include a ring-assembled hydrocarbon ring group and a crosslinked ring-type hydrocarbon ring group.
- Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, a tetracyclic hydrocarbon ring and the like.
- the crosslinked cyclic hydrocarbon ring may be a condensed ring in which a plurality of 5- to 8-membered cycloalkane rings are condensed.
- the crosslinked cyclic hydrocarbon ring group is preferably a norbornane ring group, an adamantane ring group, a bicyclooctane ring group, or a tricyclo [5, 2, 1, 02, 6] decane ring group.
- alkylene group and the non-aromatic ring group do not have a substituent other than ⁇ (OH) q5.
- q5 represents an integer of 1 to 5.
- the repeating unit having a fluorinated alcohol group is preferably a repeating unit represented by the general formula (A6).
- X Q6 represents a hydrogen atom, a halogen atom, or a monovalent organic group (preferably a methyl group).
- RQ6 represents an alkylene group (linear or branched chain, preferably 1 to 5 carbon atoms), a non-aromatic ring group, an aromatic ring group, or a group composed of a combination of two or more of these. ..
- Examples of the non-aromatic ring group include a monocyclic hydrocarbon ring group and a polycyclic hydrocarbon ring group.
- Examples of the monocyclic hydrocarbon ring group include a cycloalkane ring group having 3 to 12 carbon atoms (preferably 3 to 7 carbon atoms) and a cycloalkene ring group having 3 to 12 carbon atoms.
- Examples of the polycyclic hydrocarbon ring group include a ring-assembled hydrocarbon ring group and a crosslinked ring-type hydrocarbon ring group.
- Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, a tetracyclic hydrocarbon ring and the like.
- the crosslinked cyclic hydrocarbon ring may be a condensed ring in which a plurality of 5- to 8-membered cycloalkane rings are condensed.
- the crosslinked cyclic hydrocarbon ring group is preferably a norbornane ring group, an adamantane ring group, a bicyclooctane ring group, or a tricyclo [5, 2, 1, 02, 6] decane ring group.
- the aromatic ring group preferably has an aromatic ring group having 6 to 18 carbon atoms, and more preferably a benzene ring group, a naphthalene ring group, an anthracene ring group, or a biphenylene ring group.
- alkylene group, the non-aromatic ring group, and the aromatic ring group do not have a substituent other than ⁇ ( ⁇ C (CF 3 ) 2 OH) q6.
- q6 represents an integer from 1 to 5.
- the content thereof is preferably 1 to 60 mol%, more preferably 5 to 50 mol%, and 7 to 7 to all the repeating units of the resin (A). 45 mol% is more preferred.
- the repeating unit having a hydroxyl group may be used alone or in combination of two or more.
- the repeating unit having a phenolic hydroxyl group is preferably a repeating unit having a phenolic hydroxyl group represented by the following general formula (B2).
- X represents a hydrogen atom, an alkyl group, or a halogen atom.
- the alkyl group may be linear or branched.
- the alkyl group preferably has 1 to 10 carbon atoms.
- the substituent of the alkyl group is preferably a hydroxyl group or a halogen atom.
- the alkyl group has a substituent, it is preferable that the alkyl group has only a hydroxyl group and / or a halogen atom as the substituent.
- the alkyl group is preferably -CH 3.
- X 4 represents a single bond, -COO-, or -CONR 64-
- R 64 is a hydrogen atom or an alkyl group (which may be linear or branched, preferably having a number of carbon atoms). Represents 1 to 5).
- the carbonyl carbon in -COO- is preferably directly attached to the main chain of the repeating unit.
- L 4 represents a single bond or an alkylene group (which may be linear or branched, preferably having 1 to 20 carbon atoms).
- Ar 4 represents an (n + 1) -valent aromatic ring group.
- the aromatic ring group is an arylene group having 6 to 18 carbon atoms such as a benzene ring group, a naphthalene ring group, and an anthracene ring group, or a thiophene ring group, a furan ring group, a pyrrole ring group, a benzothiophene ring group, and a benzofuran.
- Aromatic ring groups containing heterocycles such as a ring group, a benzopyrol ring group, a triazine ring group, an imidazole ring group, a benzoimidazole ring group, a triazole ring group, a thiadiazol ring group, and a thiazole ring group are preferable, and a benzene ring group is preferable. More preferred.
- n represents an integer from 1 to 5.
- the (n + 1) -valent aromatic ring group may further have a substituent.
- Examples of the substituent that the above-mentioned alkyl group of R 64 , alkylene group of L 4 and Ar 4 (n + 1) -valent aromatic ring group can have include a halogen atom (preferably a fluorine atom) and a methoxy group. Examples thereof include an alkoxy group such as an ethoxy group, a hydroxyethoxy group, a propoxy group, a hydroxypropoxy group, and a butoxy group; an aryl group such as a phenyl group; and the like. Further , examples of the substituent that the (n + 1) -valent aromatic ring group of Ar 4 can have include an alkyl group (which may be linear or branched, preferably having 1 to 20 carbon atoms).
- the resin (A) of the present invention may have a repeating unit having a hydroxyl group other than the above.
- Specific examples of the repeating unit having a hydroxyl group other than the above are shown below, but the present invention is not limited thereto. However, the following specific examples show the structure as a raw material monomer.
- repeating unit (1c) is the repeating unit described in paragraphs [0370] to [0433] of the US Patent Application Publication No. 2016/0070167A1.
- the type of the repeating unit (1c) contained in the resin (A) may be one or more.
- the content of the repeating unit (1c) contained in the resin (A) (if there are a plurality of repeating units (1c), the total content thereof) is the resin. It is preferably 5 to 50% by mass, more preferably 10 to 45% by mass, and even more preferably 10 to 40% by mass with respect to all the repeating units in (A).
- the resin (A) may further contain other repeating units.
- the description in paragraphs [0122] to [0133] of International Publication No. 2018/193954 can be referred to, and these contents are incorporated in the present specification.
- the resin (A) may contain a repeating unit other than the above as the other repeating unit as long as the effect of the present invention is not impaired.
- the resin (A) may have a repeating unit having a photoacid generating group. good.
- the repeating unit having a photoacid generating group the description in paragraphs [0090] to [0106] of JP-A-2014-413327 can be referred to, and these contents are incorporated in the present specification.
- the resin (A) may further contain a repeating unit having a sultone structure.
- the sultone structure may have a sultone ring, and a sultone structure having a 5- to 7-membered sultone ring is preferable.
- a sultone structure in which another ring is condensed into a 5- to 7-membered sultone ring in the form of forming a bicyclo structure or a spiro structure is also preferable.
- the sultone structure may or may not have a substituent (Rb 2).
- substituent (Rb 2 ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 2 to 8 carbon atoms, and a carboxy group.
- a halogen atom, a hydroxyl group, a cyano group or the like is preferable, and an alkyl group having 1 to 4 carbon atoms or a cyano group is more preferable.
- n 2 represents an integer from 0 to 4. When n 2 is 2 or more, the plurality of substituents (Rb 2 ) may be the same or different. Further, a plurality of existing substituents (Rb 2 ) may be bonded to each other to form a ring.
- the content thereof is preferably 1 to 50% by mass, more preferably 3 to 40% by mass, based on all the repeating units of the resin (A). It is more preferably to 30% by mass.
- the resin (A) may further have other repeating units other than the above.
- the resin (A) can be synthesized according to a conventional method (for example, radical polymerization).
- the weight average molecular weight of the resin (A) is preferably 1,000 to 200,000, more preferably 3,000 to 20,000, and even more preferably 4,500 to 15,000.
- the weight average molecular weight of the resin (A) is set to 1,000 to 200,000, deterioration of heat resistance and dry etching resistance can be prevented, and further, deterioration of developability and high viscosity can be prevented. It is possible to prevent the film property from deteriorating.
- the dispersity (molecular weight distribution) of the resin (A) is usually 1 to 5, preferably 1 to 3, more preferably 1.2 to 3.0, and even more preferably 1.2 to 2.0.
- the content of the resin (A) in the composition of the present invention is preferably 50 to 99.9% by mass, preferably 60 to 99.0% by mass, based on the total solid content in the composition of the present invention. More preferably. Further, the resin (A) may be used alone or in combination of two or more.
- the solid content means a component other than the solvent.
- the composition of the present invention contains a compound (B) (also referred to as a photoacid generator) that generates an acid upon irradiation with active light or radiation.
- the photoacid generator is a compound that generates an acid by exposure (preferably exposure to electron beam (EB) or EUV).
- EB electron beam
- EUV electron beam
- the photoacid generator may be in the form of a small molecule compound or may be incorporated in a part of the polymer. Further, the form of the small molecule compound and the form incorporated in a part of the polymer may be used in combination.
- the photoacid generator is in the form of a small molecule compound
- the molecular weight is preferably 3000 or less, more preferably 2000 or less, still more preferably 1000 or less.
- the photoacid generator is in the form of being incorporated in a part of the polymer, it may be incorporated in a part of the resin (A) or may be incorporated in a resin different from the resin (A).
- the photoacid generator is preferably in the form of a small molecule compound.
- the photoacid generator is not particularly limited, and among them, a compound that generates an organic acid by irradiation with electron beam (EB) or EUV is preferable, and a photoacid generator having a fluorine atom or an iodine atom in the molecule is more preferable.
- the organic acid include sulfonic acid (aliphatic sulfonic acid, aromatic sulfonic acid, camphor sulfonic acid, etc.), carboxylic acid (aliphatic carboxylic acid, aromatic carboxylic acid, aralkylcarboxylic acid, etc.), and carbonyl. Examples thereof include sulfonylimide acid, bis (alkylsulfonyl) imide acid, and tris (alkylsulfonyl) methidoic acid.
- the photoacid generator is preferably an ionic compound containing an anion and a cation because the effect of the present invention is more excellent.
- the photoacid generator may be an ionic compound having an anionic molecule and a cationic molecule, respectively, or may be a betaine compound having a structure in which an anionic portion and a cationic portion are covalently linked.
- the photoacid generator is more preferably an ionic compound having an anionic molecule and a cationic molecule, respectively, and is composed of one or more anionic molecules and one or more cationic molecules, and is composed of the above-mentioned cationic molecule. It is more preferable that at least one of them contains a fluorine atom.
- the photoacid generator is particularly preferably represented by any of the following general formulas (a) to (c). Details of the general formulas (a) to (c) will be described later.
- M a1 + and M a2 + each independently represent an organic cation
- L a represents a divalent organic group
- a a - and B a - are each independently an anionic functional Represents a group.
- HA a -L a -B represented by a H compound M a1 + and M a2 + is substituted with a hydrogen atom each of the compounds represented by the represented by HA a pKa groups is less than the pKa of the groups represented by B a H.
- M b1 + and M b2 + each independently represent an organic cation
- L b represents a (nb + 1) -valent organic group
- Ab ⁇ and B b ⁇ each independently represent an anion. It represents a sex functional group
- nb represents an integer of 2 or more.
- the plurality of M b1 + and Ab ⁇ may be the same or different from each other.
- M b1 + and M b2 + of the compound represented by is substituted with hydrogen atoms, respectively (HA b) a compound represented by nb -L b -B b H, in HA b
- the pKa of the group represented is smaller than the pKa of the group represented by B b H.
- Mc + represents an organic cation
- Ac ⁇ represents an anionic functional group
- L c represents a nonionic organic moiety capable of neutralizing an acid
- nc represents 2 or more. Represents an integer.
- the plurality of Mc + and Ac ⁇ may be the same or different from each other.
- the photoacid generator is preferably a compound represented by the following general formula (PA-1).
- a 1 and A 2 are each independently, -SO 2 -R P, or represents -CO-R P.
- R P represents an organic group.
- R P present two in the general formula (PA-1) may be the same or different.
- R P is a group represented by the general formula (RF) is preferred.
- LRF represents a single bond or a divalent linking group.
- the divalent linking group include -COO-, -CONH-, -CO-, -O-, -S-, -SO-, -SO 2- , and an alkylene group (linear or branched chain). It may be preferably 1 to 6 carbon atoms), a cycloalkylene group (preferably 3 to 15 carbon atoms), an alkaneylene group (linear or branched chain, preferably 2 to 6 carbon atoms), and these.
- a divalent linking group obtained by combining a plurality of the above can be mentioned.
- the alkylene group (including an alkylene group that can be contained in a divalent linking group in which a plurality of them are combined) is a perfluoroalkylene group.
- the divalent linking group is preferably -alkylene group-COO- or -alkylene group-SO 2- .
- the alkylene group is preferably present on the N- side.
- R RF represents a cycloalkyl group or an alkyl group.
- the cycloalkyl group may be monocyclic or polycyclic.
- the cycloalkyl group preferably has 3 to 15 carbon atoms, and more preferably 5 to 10 carbon atoms. Examples of the cycloalkyl group include a norbornyl group, a decalynyl group, and an adamantyl group.
- the substituent that the cycloalkyl group may have is preferably an alkyl group (linear or branched chain, preferably 1 to 5 carbon atoms).
- the cycloalkyl group does not have any other substituent.
- One or more of the carbon atoms which are ring member atoms of the cycloalkyl group may be replaced with carbonyl carbon atoms and / or heteroatoms.
- the carbon atom (-CH ⁇ ) bonded to L RF in the cycloalkyl group may be replaced by the nitrogen atom (-N ⁇ ).
- R RF is an alkyl group
- the alkyl group may be linear or branched.
- the alkyl group preferably has 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms.
- the substituent that the alkyl group may have is preferably a cycloalkyl group, a fluorine atom, or a cyano group. It is also preferable that the above alkyl group has no substituent other than these.
- Examples of the cycloalkyl group as the substituent include, for example, the cycloalkyl group described in the case where R RF is a cycloalkyl group.
- the alkyl group may or may not be a perfluoroalkyl group.
- the alkyl group has a fluorine atom as the substituent, it is also preferable that a part or all of the alkyl group is a perfluoromethyl group.
- M + represents a cation.
- the M + cation is preferably an organic cation.
- the organic cations are preferably cations represented by the general formula (ZaI) (cations (ZaI)) or cations represented by the general formula (ZaII) (cations (ZaII)) independently.
- R 201 , R 202 , and R 203 each independently represent an organic group.
- the carbon number of the organic group as R 201 , R 202 , and R 203 is usually 1 to 30, preferably 1 to 20.
- two of R 201 to R 203 may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester group, an amide group, or a carbonyl group.
- the two of the group formed by bonding of the R 201 ⁇ R 203 for example, an alkylene group (e.g., butylene, pentylene), and, -CH 2 -CH 2 -O-CH 2 -CH 2 - Can be mentioned.
- Examples of the cation in the general formula (ZaI) include a cation (ZaI-1), a cation (ZaI-2), and a cation represented by the general formula (ZaI-3b) (cation (ZaI-3b)), which will be described later.
- a cation represented by the general formula (ZaI-4b) (cation (ZaI-4b)) can be mentioned.
- the cation (ZaI-1) is an aryl sulfonium cation in which at least one of R 201 to R 203 of the above general formula (ZaI) is an aryl group.
- the aryl sulfonium cation all of R 201 to R 203 may be an aryl group, or a part of R 201 to R 203 may be an aryl group and the rest may be an alkyl group or a cycloalkyl group.
- R 201 to R 203 may be an aryl group, and the remaining two of R 201 to R 203 may be bonded to form a ring structure, and an oxygen atom, a sulfur atom, and the like may be formed in the ring. It may contain an ester group, an amide group, or a carbonyl group.
- a group formed by bonding two of R 201 to R 203 for example, one or more methylene groups are substituted with an oxygen atom, a sulfur atom, an ester group, an amide group, and / or a carbonyl group.
- alkylene group e.g., butylene group, pentylene group, or -CH 2 -CH 2 -O-CH 2 -CH 2 -
- aryl sulfonium cation examples include a triaryl sulfonium cation, a diallyl alkyl sulfonium cation, an aryl dialkyl sulfonium cation, a diallyl cycloalkyl sulfonium cation, and an aryl dicycloalkyl sulfonium cation.
- the aryl group contained in the arylsulfonium cation is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group.
- the aryl group may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the heterocyclic structure include pyrrole residues, furan residues, thiophene residues, indole residues, benzofuran residues, benzothiophene residues and the like.
- the aryl sulfonium cation has two or more aryl groups, the two or more aryl groups may be the same or different.
- the alkyl group or cycloalkyl group that the arylsulfonium cation has as needed is a linear alkyl group having 1 to 15 carbon atoms, a branched alkyl group having 3 to 15 carbon atoms, or a branched alkyl group having 3 to 15 carbon atoms.
- a cycloalkyl group of 15 is preferable, and examples thereof include a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a t-butyl group, a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.
- the aryl group, alkyl group, and substituent that the cycloalkyl group of R 201 to R 203 may have are independently an alkyl group (for example, 1 to 15 carbon atoms) and a cycloalkyl group (for example, carbon number of carbon atoms). 3 to 15), aryl group (for example, 6 to 14 carbon atoms), alkoxy group (for example, 1 to 15 carbon atoms), cycloalkyl alkoxy group (for example, 1 to 15 carbon atoms), halogen atom, hydroxyl group, or phenylthio group. preferable.
- the substituent may further have a substituent if possible.
- the alkyl group may have a halogen atom as a substituent and may be an alkyl halide group such as a trifluoromethyl group. good.
- the cation (ZaI-2) is a cation in which R 201 to R 203 in the formula (ZaI) independently represent an organic group having no aromatic ring.
- the aromatic ring also includes an aromatic ring containing a hetero atom.
- the organic group having no aromatic ring as R 201 to R 203 generally has 1 to 30 carbon atoms, and preferably 1 to 20 carbon atoms.
- R 201 to R 203 are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group, and are linear or branched 2-oxoalkyl groups, 2-oxocycloalkyl groups, or An alkoxycarbonylmethyl group is more preferred, and a linear or branched 2-oxoalkyl group is even more preferred.
- Examples of the alkyl group and cycloalkyl group of R 201 to R 203 include a linear alkyl group having 1 to 10 carbon atoms or a branched chain alkyl group having 3 to 10 carbon atoms (for example, a methyl group, an ethyl group, and a propyl group). Groups, butyl groups, and pentyl groups), and cycloalkyl groups having 3 to 10 carbon atoms (for example, cyclopentyl groups, cyclohexyl groups, and norbornyl groups) can be mentioned.
- R 201 to R 203 may be further substituted with a halogen atom, an alkoxy group (for example, 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group.
- the cation (ZaI-3b) is a cation represented by the following general formula (ZaI-3b).
- R 1c to R 5c are independently hydrogen atom, alkyl group, cycloalkyl group, aryl group, alkoxy group, aryloxy group, alkoxycarbonyl group, alkylcarbonyloxy group, cycloalkylcarbonyloxy group, halogen atom and hydroxyl group. , Nitro group, alkylthio group, or arylthio group.
- R 6c and R 7c independently represent a hydrogen atom, an alkyl group (t-butyl group, etc.), a cycloalkyl group, a halogen atom, a cyano group, or an aryl group.
- R x and R y independently represent an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group, respectively.
- R 1c to R 5c , R 5c and R 6c , R 6c and R 7c , R 5c and R x , and R x and R y may be combined to form a ring, respectively.
- This ring may independently contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond.
- the ring include an aromatic or non-aromatic hydrocarbon ring, an aromatic or non-aromatic heterocycle, and a polycyclic condensed ring formed by combining two or more of these rings.
- the ring include a 3- to 10-membered ring, preferably a 4- to 8-membered ring, and more preferably a 5- or 6-membered ring.
- Examples of the group formed by combining any two or more of R 1c to R 5c , R 6c and R 7c , and R x and R y include an alkylene group such as a butylene group and a pentylene group. ..
- the methylene group in the alkylene group may be substituted with a hetero atom such as an oxygen atom.
- the group formed by bonding R 5c and R 6c , and R 5c and R x is preferably a single bond or an alkylene group.
- Examples of the alkylene group include a methylene group and an ethylene group.
- the cation (ZaI-4b) is a cation represented by the following general formula (ZaI-4b).
- R 13 is a group having a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, an alkoxy group, an alkoxycarbonyl group, or a cycloalkyl group (the cycloalkyl group itself may be used, or a group containing a cycloalkyl group as a part). May be). These groups may have substituents.
- R 14 is a hydroxyl group, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or a group having a cycloalkyl group (the cycloalkyl group itself may be a cycloalkyl group). It may be a group containing a group as a part). These groups may have substituents. When a plurality of R 14 are present, each independently represents the above group such as a hydroxyl group.
- R 15 independently represents an alkyl group, a cycloalkyl group, or a naphthyl group. These groups may have substituents.
- Bonded to two R 15 each other may form a ring.
- an oxygen atom or may contain a hetero atom such as nitrogen atom.
- two R 15 is an alkylene group, it is preferable to form a ring structure.
- the alkyl groups of R 13 , R 14 and R 15 are linear or branched chain.
- the alkyl group preferably has 1 to 10 carbon atoms.
- the alkyl group is more preferably a methyl group, an ethyl group, an n-butyl group, a t-butyl group or the like.
- R 204 and R 205 each independently represent an aryl group, an alkyl group, or a cycloalkyl group.
- the aryl group of R 204 and R 205 is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group.
- the aryl group of R 204 and R 205 may be an aryl group having a heterocycle having an oxygen atom, a nitrogen atom, a sulfur atom or the like.
- Examples of the skeleton of the aryl group having a heterocycle include pyrrole, furan, thiophene, indole, benzofuran, and benzothiophene.
- the alkyl groups and cycloalkyl groups of R 204 and R 205 are linear alkyl groups having 1 to 10 carbon atoms or branched chain alkyl groups having 3 to 10 carbon atoms (for example, methyl group, ethyl group, propyl group, butyl group).
- a group or a pentyl group) or a cycloalkyl group having 3 to 10 carbon atoms is preferable.
- the aryl group, alkyl group, and cycloalkyl group of R 204 and R 205 may each independently have a substituent.
- substituents that the aryl group, alkyl group, and cycloalkyl group of R 204 and R 205 may have include an alkyl group (for example, 1 to 15 carbon atoms) and a cycloalkyl group (for example, 3 carbon atoms). ⁇ 15), an aryl group (for example, 6 to 15 carbon atoms), an alkoxy group (for example, 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, a phenylthio group and the like.
- photoacid generators In the composition of the present invention, other photoacid generators other than those described above may be used.
- Other photoacid generators for example, "M + Z - (M + represents a cation and Z - represents an anion)” include compounds represented by (onium salt).
- M + Z - in a compound represented by, M + represents a cation, include the same cations as the cation in formula (PA-1).
- Z - "M + Z" - represents an anion
- the ability of causing a nucleophilic reaction is extremely low anion preferred.
- the anion include sulfonic acid anions (aliphatic sulfonic acid anions such as fluoroalkyl sulfonic acid anions, aromatic sulfonic acid anions, camphor sulfonic acid anions, etc.) and carboxylic acid anions (aliphatic carboxylic acid anions, aromatics, etc.).
- the aliphatic moiety in the aliphatic sulfonic acid anion and the aliphatic carboxylic acid anion may be an alkyl group or a cycloalkyl group, and may be a linear or branched alkyl group having 1 to 30 carbon atoms. , A cycloalkyl group having 3 to 30 carbon atoms is preferable.
- the aromatic ring group in the aromatic sulfonic acid anion and the aromatic carboxylic acid anion is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a tolyl group, and a naphthyl group.
- Examples of the substituents that the alkyl group, cycloalkyl group, and aryl group mentioned above can have include a halogen atom such as a nitro group and a fluorine atom, a carboxylic acid group, a hydroxyl group, an amino group, a cyano group, and an alkoxy group.
- cycloalkyl group preferably 3 to 15 carbon atoms
- aryl group preferably 6 to 14 carbon atoms
- aryloxy group preferably 6 to 14 carbon atoms
- alkoxycarbonyl Group preferably 2 to 7 carbon atoms
- acyl group preferably 2 to 12 carbon atoms
- alkoxycarbonyloxy group preferably 2 to 7 carbon atoms
- alkylthio group preferably 1 to 15 carbon atoms
- alkyl A sulfonyl group preferably 1 to 15 carbon atoms
- an alkyliminosulfonyl group preferably 1 to 15 carbon atoms
- an aryloxysulfonyl group preferably 6 to 20 carbon atoms
- an alkylaryloxysulfonyl group preferably carbon number 1 to 15
- cycloalkylaryloxysulfonyl group preferably 10 to 20 carbon atoms
- alkyloxyalkyloxy group preferably 5 to 20 carbon atoms
- cycloalkylalkyloxyalkyloxy group preferably carbon number of carbons
- the aralkyl group in the aralkyl carboxylic acid anion is preferably an aralkyl group having 7 to 12 carbon atoms, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylbutyl group.
- the alkyl group in the tris (alkylsulfonyl) methideanion is preferably an alkyl group having 1 to 5 carbon atoms.
- substituent of these alkyl groups include a halogen atom, an alkyl group substituted with a halogen atom, an alkoxy group, an alkylthio group, an alkyloxysulfonyl group, an aryloxysulfonyl group, and a cycloalkylaryloxysulfonyl group.
- a fluorine atom or an alkyl group substituted with a fluorine atom is preferable.
- non-nucleophilic anions e.g., fluorinated phosphorus (e.g., PF 6 -), fluorinated boron (e.g., BF 4 -), and fluorinated antimony (e.g., SbF 6 -) and the like.
- fluorinated phosphorus e.g., PF 6 -
- fluorinated boron e.g., BF 4 -
- fluorinated antimony e.g., SbF 6 -
- the non-nucleophilic anion is an aliphatic sulfonic acid anion in which at least the ⁇ position of the sulfonic acid is substituted with a fluorine atom, an aromatic sulfonic acid anion in which a fluorine atom or a group having a fluorine atom is substituted, or an alkyl group in which fluorine is used.
- Atomically substituted tris (alkylsulfonyl) methideanions are preferred.
- a perfluoroaliphatic sulfonic acid anion preferably 4 to 8 carbon atoms
- a benzenesulfonic acid anion having a fluorine atom is more preferable
- a nonafluorobutane sulfonic acid anion, a perfluorooctane sulfonic acid anion, and a pentafluorobenzene sulfone are used.
- Acid anions or 3,5-bis (trifluoromethyl) benzenesulfonic acid anions are more preferred.
- the pKa of the generated acid is -1 or less in order to improve the sensitivity.
- an anion represented by the following general formula (AN1) is also preferable.
- Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.
- R 1 and R 2 independently represent a hydrogen atom, a fluorine atom, or an alkyl group, and when a plurality of them are present, R 1 and R 2 may be the same or different, respectively.
- L represents a divalent linking group, and when there are a plurality of L, L may be the same or different.
- A represents a cyclic organic group.
- x represents an integer of 1 to 20
- y represents an integer of 0 to 10
- z represents an integer of 0 to 10.
- the general formula (AN1) will be described in more detail.
- the number of carbon atoms of the alkyl group in the alkyl group substituted with the fluorine atom of Xf is preferably 1 to 10, and more preferably 1 to 4.
- the alkyl group substituted with the fluorine atom of Xf is preferably a perfluoroalkyl group.
- Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms.
- Xf is, for example, fluorine atom, CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C.
- fluorine atom or CF. 3 is preferable.
- both Xfs are fluorine atoms.
- the alkyl groups of R 1 and R 2 may have a substituent (preferably a fluorine atom), and the number of carbon atoms in the substituent is preferably 1 to 4.
- the substituent is preferably a perfluoroalkyl group having 1 to 4 carbon atoms.
- Alkyl groups having substituents for R 1 and R 2 include, for example, CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , C 5 F 11 , C 6 F 13 , C 7 F 15 , C.
- R 1 and R 2 are preferably a fluorine atom or CF 3.
- x is preferably an integer of 1 to 10, and more preferably 1 to 5.
- y is preferably an integer of 0 to 4, more preferably 0.
- z is preferably an integer of 0 to 5, more preferably an integer of 0 to 3.
- the divalent linking group of L include -COO-, -CO- , -O-, -S-, -SO-, -SO 2- , alkylene group, cycloalkylene group, alkaneylene group, and these.
- Examples thereof include a linking group in which a plurality of the above groups are linked, and a linking group having a total carbon number of 12 or less is preferable. Among them, -COO-, -CO-, or -O- is preferable, and -COO- is more preferable.
- the cyclic organic group of A is not particularly limited as long as it has a cyclic structure, and has an alicyclic group, an aromatic ring group, and a heterocyclic group (not only those having aromaticity but also aromaticity). (Including those that do not), etc.
- the alicyclic group may be monocyclic or polycyclic, and a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group is preferable, and in addition, a norbornyl group, a tricyclodecanyl group, and a tetracyclo Polycyclic cycloalkyl groups such as a decanyl group, a tetracyclododecanyl group, and an adamantyl group are preferable.
- a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group is preferable, and in addition, a norbornyl group, a tricyclodecanyl group, and a tetracyclo Polycyclic cycloalkyl groups such as a decanyl group,
- alicyclic groups having a bulky structure having 7 or more carbon atoms such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group, are used in the post-exposure heating step. It is preferable from the viewpoint of suppressing the diffusibility in the membrane and improving the MEEF (Mask Error Enhancement Factor).
- the aromatic ring group include a benzene ring, a naphthalene ring, a phenanthrene ring, an anthracene ring and the like.
- heterocyclic group examples include groups derived from a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, a pyridine ring and the like. Of these, a group derived from a furan ring, a thiophene ring, or a pyridine ring is preferable.
- examples of the cyclic organic group include a group having a lactone structure, and specific examples thereof include lactone structures represented by the above-mentioned general formulas (LC1-1) to (LC1-22).
- the cyclic organic group may have a substituent.
- the substituent may be an alkyl group (linear or branched chain, and may contain a cyclic structure, preferably having 1 to 12 carbon atoms) or a cycloalkyl group (monocyclic or polycyclic). It may be a spiro ring in the case of a polycycle, preferably having a carbon number of 3 to 20), an aryl group (preferably having a carbon number of 6 to 14), a hydroxyl group, an alkoxy group, an ester group, and an amide.
- Examples thereof include a group, a urethane group, a ureido group, a thioether group, a sulfonamide group, and a sulfonic acid ester group.
- the carbon constituting the cyclic organic group may be carbonyl carbon.
- Examples of the photoacid generator include paragraphs [0368] to [0377] of Japanese Patent Application Laid-Open No. 2014-41328 and paragraphs [0240] to [0262] of Japanese Patent Application Laid-Open No. 2013-228681 (corresponding US Patent Application Publication No. [0339]) of the specification of 2015/004533 can be incorporated, and these contents are incorporated in the specification of the present application.
- the following compound is mentioned as a preferable specific example. In the following compounds, anions and cations can be optionally exchanged, if possible.
- composition of the present invention preferably contains, as a photoacid generator, a compound (P) having two or more (preferably two or three) cation sites and the same number of anion sites as the above cation sites.
- a compound (P) having two or more (preferably two or three) cation sites and the same number of anion sites as the above cation sites.
- the cation moiety is a structural moiety containing a positively charged atom or atomic group.
- the organic cation may be used as the cation moiety.
- the organic cation mentioned in the description of M + in the above general formula (PA-1) can be used in the same manner.
- At least one (preferably all) of the two or more cation sites (preferably organic cations) of compound (P) preferably has a group represented by the general formula (I). * -Ar x- (RI) ni (I)
- * represents the bonding position.
- * I is preferably a bond position with respect to a cationized atom (S + or I +, etc.). That is, it is preferable that Ar x in the general formula (I) is directly bonded to a cationized atom (S +, I +, etc.).
- Ar x represents an aromatic hydrocarbon ring group.
- the aromatic hydrocarbon ring group has no substituent other than ⁇ (RI) ni.
- the aromatic hydrocarbon ring group may be monocyclic or polycyclic, and a monocyclic ring is preferable.
- Examples of the aromatic hydrocarbon ring group include a benzene ring group, a naphthalene ring group, and an anthracene ring group.
- the aromatic hydrocarbon ring group is preferably a benzene ring group or a naphthalene ring group, and more preferably a benzene ring group.
- ni represents an integer of 1 or more. ni is preferably an integer of 1 to 5.
- RI represents a substituent having no cationic functional group.
- RI which is a substituent, has a cationic functional group (a cationized atom such as> S + -, -I + -,> C + -, or> N + ⁇ and a group containing the above-mentioned atom).
- a halogen atom an alkyl group (which may be linear or branched. The number of carbon atoms is, for example, 1 to 6), and a cycloalkyl group (which may be monocyclic or polycyclic. The number of carbon atoms is, for example, 5).
- RI may have additional substituents where possible, with the additional substituents preferably a halogen atom (preferably a fluorine atom). It is also preferred that these substituents have no additional substituents other than the halogen atom (eg, fluorine atom).
- RI may be a perhalogenated alkyl group (preferably a perfluoroalkyl group) in which an alkyl group is further substituted with a halogen atom.
- the RI may also be, for example, a cycloalkylalkoxy group.
- the total carbon number of one RI (in the case of having a substituent, the number of carbon atoms including the number of carbon atoms contained in the substituent) is preferably 1 to 20.
- ni is 2 or more, a plurality of RIs may be bonded to each other to form a non-aromatic ring.
- the organic cation having a group represented by the general formula (I) is also referred to as a specific organic cation.
- the specific organic cation is preferably an organic cation represented by the general formula (II), an organic cation represented by the general formula (III), or an organic cation represented by the general formula (IV). That is, the compound (P) is selected from the group consisting of an organic cation represented by the general formula (II), an organic cation represented by the general formula (III), and an organic cation represented by the general formula (IV).
- organic cations represented by the general formulas (II) to (IV) have a specific substituent and structure to make the entire compound (P) hydrophobic. Therefore, the compatibility with the acid-degradable resin is further improved, the compound (P) is easily dispersed uniformly even in the film formed by using the composition of the present invention, and the LWR performance is more excellent. Further, since the compatibility between the compound (P) and the acid-decomposable resin is good, the dispersibility of the compound (P) in the composition of the present invention is excellent, and the compound (P) is less likely to aggregate, which is excellent. The LWR performance is easily exhibited, and the effect of the present invention is more excellent.
- Ar 1 , Ar 2 and Ar 3 each independently represent an aromatic hydrocarbon ring group. At least one of Ar 1 , Ar 2 and Ar 3 represents an aromatic hydrocarbon ring group having a substituent having -CF 3. However, none of the aromatic hydrocarbon ring groups represented by Ar 1 , Ar 2 and Ar 3 has a substituent having a cationic functional group.
- the aromatic hydrocarbon ring group examples include a benzene ring group, a naphthalene ring group, and an anthracene ring group, and a benzene ring group is preferable.
- the substituent that the aromatic hydrocarbon ring group may have is preferably a halogen atom, an alkyl group, a cycloalkyl group, or an alkoxy group.
- the substituent may be one kind alone or two or more kinds.
- the alkyl group may be linear or branched.
- the alkyl group has, for example, 1 to 6 carbon atoms.
- the cycloalkyl group may be monocyclic or polycyclic.
- the cycloalkyl group has, for example, 5 to 20 carbon atoms.
- the alkoxy group may be linear or branched.
- the alkyl group has, for example, 1 to 6 carbon atoms.
- the alkyl group, the cycloalkyl group, and the alkoxy group may each independently have an additional substituent.
- the further substituent is preferably a halogen atom (preferably a fluorine atom). It is also preferred that these substituents have no additional substituents other than the halogen atom (eg, fluorine atom).
- the alkyl group may be a perhalogenated alkyl group (preferably a perfluoroalkyl group).
- the number of the substituents of the aromatic hydrocarbon ring group is preferably 1 to 5 independently.
- At least one is an aromatic hydrocarbon ring group having a substituent, and at least two (two or three) are substituents. It is preferably an aromatic hydrocarbon ring group having.
- At least one (1 to 3) represents an aromatic hydrocarbon ring group having a substituent having ⁇ CF 3.
- Substituents having the -CF 3 is substituent itself may be a -CF 3, may have a -CF 3 as part of the overall substituent.
- Aromatic hydrocarbon ring group having a substituent having a -CF 3 preferably have one to 5 substituent having -CF 3.
- Aromatic hydrocarbon ring group having a substituent having a -CF 3 may further have a substituent having no -CF 3.
- one or two may be aromatic hydrocarbon ring groups having -CF 3 and having no substituent.
- the organic cation represented by the general formula (II) preferably has 1 to 8 ⁇ CF 3 existing in a form of being directly bonded to the ring member atom of the aromatic hydrocarbon ring group.
- the substituent having a cationic functional group the substituent itself may be a cationic functional group, or the substituent may have a cationic functional group as a part of the whole substituent.
- the organic cation represented by the general formula (II) is preferably different from the organic cation represented by the general formula (III) described later.
- the organic cation represented by the general formula (II) has a fluorine atom in a form directly connected to the ring member atom of the above aromatic hydrocarbon ring group represented by Ar 1 , Ar 2 , and Ar 3. It is also preferable that there is no such thing.
- Ar 4 , Ar 5 and Ar 6 each independently represent an aromatic hydrocarbon ring group. At least two of Ar 4 , Ar 5 and Ar 6 represent aromatic hydrocarbon ring groups having substituents. At least one of Ar 4 , Ar 5 and Ar 6 represents an aromatic hydrocarbon ring group having a fluorine atom as a substituent. At least two of Ar 4 , Ar 5, and Ar 6 represent groups of different structures. However, none of the aromatic hydrocarbon ring groups represented by Ar 4 , Ar 5 and Ar 6 has a substituent having a cationic functional group.
- the substituent that the aromatic hydrocarbon ring group may have is preferably a halogen atom (preferably a fluorine atom), an alkyl group, a cycloalkyl group, or an alkoxy group.
- the substituent may be one kind alone or two or more kinds.
- the alkyl group may be linear or branched.
- the alkyl group has, for example, 1 to 6 carbon atoms.
- the cycloalkyl group may be monocyclic or polycyclic.
- the cycloalkyl group has, for example, 5 to 20 carbon atoms.
- the alkoxy group may be linear or branched.
- the alkyl group has, for example, 1 to 6 carbon atoms.
- the alkyl group, the cycloalkyl group, and the alkoxy group may each independently have an additional substituent.
- the number of the substituents of the aromatic hydrocarbon ring group is preferably 1 to 5 independently.
- Ar 4 , Ar 5 , and Ar 6 in the general formula (III) at least two (two or three) are aromatic hydrocarbon ring groups having substituents.
- At least one (preferably 1 to 3) of Ar 4 , Ar 5 , and Ar 6 in the general formula (III) is an aromatic hydrocarbon ring group having a fluorine atom as a substituent. ..
- Ar 4 , Ar 5 , and Ar 6 in the general formula (III) at least two (two or three) "aromatic hydrocarbon ring groups having substituents" are present.
- One (1 to 2 of 2 or 1 to 3 of 3) is an "aromatic hydrocarbon ring group having a fluorine atom as a substituent".
- aromatic hydrocarbon ring group having a fluorine atom as a substituent means at least one fluorine atom (fluorine atom which is the substituent itself) directly bonded to a ring member atom in the aromatic hydrocarbon ring group (preferably). Means an aromatic hydrocarbon ring group having 1 to 5).
- aromatic hydrocarbon ring group having a fluorine atom as a substituent may have a substituent other than the substituent which is a fluorine atom.
- Ar 4 , Ar 5 , and Ar 6 in the general formula (III) at least two represent groups having different structures.
- Ar 4 , Ar 5 , and Ar 6 are not all based on the same structure.
- Ar 4 , Ar 5 , and Ar 6 are all groups having the same structure.
- the aromatic hydrocarbon ring groups of Ar 4 , Ar 5 , and Ar 6 are all benzene ring groups.
- the types and arrangements (bonding positions) of the groups of the benzene ring groups of Ar 4 , Ar 5 , and Ar 6 are also the same.
- the aromatic hydrocarbon ring groups which may have a substituent represented by Ar 4 , Ar 5 , and Ar 6 in the general formula (III) all have a substituent having a cationic functional group. Do not.
- the organic cation represented by the general formula (III) has no cationic functional group other than S + that directly binds to Ar 4 , Ar 5 , and Ar 6.
- the organic cation represented by the general formula (III) is preferably different from the organic cation represented by the general formula (II).
- none of the aromatic hydrocarbon ring groups which may have a substituent represented by Ar 4 , Ar 5 , and Ar 6 preferably has a substituent having ⁇ CF 3.
- Ar 7 , Ar 8 and Ar 9 each independently represent an aromatic hydrocarbon ring group. At least one of Ar 7 , Ar 8 and Ar 9 is an aromatic hydrocarbon ring group having one or more specific hydrocarbon groups selected from the group consisting of an alkyl group and a polycyclic cycloalkyl group as substituents. Represents. However, none of the aromatic hydrocarbon ring groups represented by Ar 7 , Ar 8 and Ar 9 has a substituent having a cationic functional group. None of the aromatic hydrocarbon ring groups represented by Ar 7 , Ar 8 and Ar 9 has a substituent having a fluorine atom.
- Examples of the substituent that the aromatic hydrocarbon ring group may have include a halogen atom other than the fluorine atom, an alkyl group, a cycloalkyl group, and an alkoxy group.
- the substituent may be one kind alone or two or more kinds.
- the alkyl group may be linear or branched.
- the alkyl group has, for example, 1 to 6 carbon atoms.
- the cycloalkyl group may be monocyclic or polycyclic.
- the cycloalkyl group has, for example, 5 to 20 carbon atoms.
- the alkoxy group may be linear or branched.
- the alkyl group has, for example, 1 to 6 carbon atoms.
- the alkyl group, the cycloalkyl group, and the alkoxy group may each independently have an additional substituent.
- the number of the substituents of the aromatic hydrocarbon ring group is preferably 1 to 5 independently.
- At least one (1 to 3) consists of a group consisting of an alkyl group and a polycyclic cycloalkyl group as substituents. It is an aromatic hydrocarbon ring group having one or more specific hydrocarbon groups selected.
- the alkyl group in the specific hydrocarbon group may be linear or branched.
- the alkyl group has, for example, 1 to 6 carbon atoms.
- the polycyclic cycloalkyl group in the specific hydrocarbon group is not particularly limited as long as it is a polycyclic ring, and may be a polycyclic ring of a crosslinked ring system, a polycyclic ring of a fused ring system, or a polycyclic ring of a spiro ring system. It may be a polycyclic compound having a plurality of modes of these systems.
- the number of ring-membered atoms of the polycyclic cycloalkyl group is preferably 8 to 20.
- the cycloalkyl groups of the polycyclic for example, a norbornyl group, an adamantyl group, a bicyclooctanyl group, and, include tricyclo [5,2,1,0 2,6] decanyl, among others adamantyl group.
- the specific hydrocarbon group may or may not have an additional substituent. However, the above-mentioned additional substituents are other than the fluorine atom and the group having a fluorine atom as a part.
- the specific hydrocarbon group directly bonds to the ring member atom of the aromatic hydrocarbon ring group. When the aromatic hydrocarbon ring group has a specific hydrocarbon group, the number thereof is preferably 1 to 5 independently. Further, the aromatic hydrocarbon ring group having a specific hydrocarbon group may or may not have a substituent other than the specific hydrocarbon group.
- None of the aromatic hydrocarbon ring groups having a substituent represented by Ar 7 , Ar 8 and Ar 9 in the general formula (IV) has a substituent having a fluorine atom. ..
- the organic cation represented by the general formula (IV) does not have a fluorine atom. That is, in the general formula (IV), the fluorine atom and the group having a fluorine atom as a part are excluded from the substituents that the aromatic hydrocarbon ring groups of Ar 7 , Ar 8 and Ar 9 can have.
- NS
- the specific organic cation may be another specific organic cation other than the organic cations represented by the general formulas (II) to (IV) described above.
- the following specific organic cations can be mentioned.
- -In the cation represented by the general formula (ZaII) mentioned in the description of M + in the above general formula (PA-1) at least one of R 204 and R 205 is a substitution having a cationic functional group.
- -In the cation represented by the general formula (ZaI-3b) mentioned in the description of M + in the above general formula (PA-1) at least one (1 to 5 ) of R 1c to R 5c.
- One) represents a group other than a hydrogen atom, and the group other than the hydrogen atom is a cation having a cationic functional group and not a substituent.
- the group other than the hydrogen atom is a cation having a cationic functional group and not a substituent.
- -In the cation represented by the general formula (ZaI-4b) mentioned in the explanation of M + in the above general formula (PA-1) "R 13 is a group other than a hydrogen atom” and " A cation that meets at least one of the requirements of "r represents an integer of 1-8". It should be noted that each group of R 13 and R 14 is not a substituent having a cationic functional group.
- the two or more cation sites (preferably organic cations, more preferably specific organic cations) of compound (P) may be the same or different.
- the anion moiety is a structural moiety containing a negatively charged atom or atomic group, and for example, an anionic functional group that may be present in the compound (P) may be used as the anion moiety.
- the compound (P) preferably has an organic anion having the same number of anionic functional groups as the cation site (preferably an organic cation) of the compound (P).
- compound (P) has two or more (preferably two or three) cation sites and the same number of anion sites as the above cation sites. That is, compound (P) has two or more (preferably two or three) anionic moieties (preferably anionic functional groups).
- anionic functional group for example, -SO 3 - group having as part, -COO - -, and -SO 3 and -COO - groups having as part, -N - - group having as part, and, carbanions (-C - ⁇ ) include groups having as part.
- anion moiety groups represented by the general formulas (B-1) to (B-13) are preferable.
- * represents the bonding position. It is also preferable that * in the general formula (B-12) is a bond position with respect to a group that is neither -CO- nor -SO 2-.
- RX1 represents an organic group.
- RX1 includes an alkyl group (which may be linear or branched, preferably having 1 to 15 carbon atoms), a cycloalkyl group (which may be monocyclic or polycyclic, preferably having 3 to 20 carbon atoms). Alternatively, an aryl group (either monocyclic or polycyclic, preferably 6 to 20 carbon atoms) is preferable.
- RX1 in formula (B-5) in R X1, N - directly attached to atoms and carbon atoms in -CO-, and, -SO 2 - is also preferred not one of sulfur atoms in the.
- the cycloalkyl group in R X1 may be monocyclic or polycyclic.
- Substituents which may have a cycloalkyl group at R X1 represents an alkyl group (a straight-chain or branched-chain. Preferably 1-5 1 carbon atoms) preferably.
- One or more of the carbon atoms are ring member atoms of the cycloalkyl group in R X1 may be replaced by carbonyl carbon atom.
- the number of carbon atoms in the alkyl group in R X1 is preferably 1 to 10, 1 to 5 and more preferable.
- Substituent which may be possessed by the alkyl group in R X1 is a cycloalkyl group, a fluorine atom, or a cyano group.
- the cycloalkyl group as the substituent include the cycloalkyl group described in the case where RX1 is a cycloalkyl group.
- Alkyl group in R X1 is, if they have a fluorine atom as the substituent, the alkyl group may be a perfluoroalkyl group.
- the alkyl group in R X1 is one or more -CH 2 - may be substituted with a carbonyl group.
- Aryl group in R X1 is a benzene ring group.
- Substituent which may be possessed by the aryl group in R X1 is an alkyl group, a fluorine atom, or a cyano group.
- alkyl group as the substituent include the alkyl groups described in the case where RX1 is a cycloalkyl group, and a perfluoroalkyl group is preferable, and a perfluoromethyl group is more preferable.
- RX2 represents a hydrogen atom or a substituent other than a fluorine atom and a perfluoroalkyl group.
- Substituent other than fluorine atom and a perfluoroalkyl group represented by R X2 is an alkyl group other than a perfluoroalkyl group, or a cycloalkyl group are preferable.
- the alkyl groups include alkyl groups other than the perfluoroalkyl group from the alkyl group for R X1. Further, it is preferable that the alkyl group does not have a fluorine atom.
- Examples of the cycloalkyl groups include cycloalkyl groups in R X1. Further, it is preferable that the cycloalkyl group does not have a fluorine atom.
- RXF1 represents a hydrogen atom, a fluorine atom, or a perfluoroalkyl group. However, at least one of the plurality of RXF1 represents a fluorine atom or a perfluoroalkyl group.
- the perfluoroalkyl group represented by RXF1 preferably has 1 to 15 carbon atoms, more preferably 1 to 10 carbon atoms, and even more preferably 1 to 6 carbon atoms.
- RXF2 represents a fluorine atom or a perfluoroalkyl group.
- the perfluoroalkyl group represented by RXF2 preferably has 1 to 15 carbon atoms, more preferably 1 to 10 carbon atoms, and even more preferably 1 to 6 carbon atoms.
- n represents an integer of 0 to 4.
- Compound (P) preferably has at least two anionic functional groups (preferably two selected from the general formulas (B-1) to (B-13)).
- the combination of the anionic functional groups of the compound (P) is not particularly limited.
- the compound (P) has a group represented by the general formula (B-8) or (B-10)
- the general formulas (B-1) to (B-7), (B-9) are further added.
- Or may have a group represented by (B-11) to (B-13).
- the compound (P) is a group represented by the general formula (B-7), it may further have a group represented by the general formula (B-6).
- These compounds (P) may have further different anionic functional groups.
- the compound (P) is anionic part, anionic sites A B - preferably has a - (anionic functional group A B).
- Anionic part A B - (anionic functional groups A B -) is a group represented by any one of formulas (BX-1) ⁇ (BX -4).
- R B represents an organic group.
- Examples of the organic group for R B has the general formula (B-1) ⁇ (B -5), and examples of the organic group R X1 can be mentioned as well in (B-12).
- anionic site A B in addition to further anionic sites A A - (anionic functional group A B) - (anionic functional group A A -) to have Is preferable.
- Anionic part A A - (anionic functional group A A -) is a group represented by any one of formulas (AX-1) ⁇ (AX -2).
- RA represents an organic group.
- RA is preferably an alkyl group.
- the alkyl group may be linear or branched.
- the alkyl group preferably has 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms.
- the substituent that the alkyl group may have is preferably a fluorine atom.
- the alkyl group having a fluorine atom as a substituent may or may not be a perfluoroalkyl group.
- the compound (P) is preferably a compound represented by the general formula (AD0).
- AD0 general formula (A 0 -) nk (M 0 +) nk formula (AD0)
- nk represents an integer of 2 or more.
- the nk is preferably 2 to 10, more preferably 2 to 3.
- the two nks existing in the general formula (AD0) have the same value.
- L 0 represents a nk-valent linking group.
- L 0 represents a single bond or a divalent linking group.
- the divalent organic group include -COO-, -CONH-, -CO-, -O-, an alkylene group (preferably 1 to 6 carbon atoms, which may be linear or branched), and cyclo. Examples thereof include an alkylene group (preferably 3 to 15 carbon atoms), an alkenylene group (preferably 2 to 6 carbon atoms), and a divalent linking group obtained by combining a plurality of these groups.
- One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a carbonyl carbon and / or a hetero atom (oxygen atom or the like).
- These divalent linking groups may further, -S -, - SO -, - SO 2 -, and, -NR N - has the (R N represents a hydrogen atom or a substituent) group is selected from the group consisting of Is also preferable.
- the nk-valent linking group include a single bond and / or each group that the divalent linking group can take, and -CR nk ⁇ , -N ⁇ ,> C ⁇ , a trivalent or higher valent hydrocarbon ring group.
- R nk represents a hydrogen atom or a substituent.
- L 0 is other than a single bond
- the total number of atoms other than hydrogen atoms constituting L 0 is preferably 1 to 100, more preferably 1 to 50.
- a 0 - represents an anionic functional group.
- the anionic functional groups are as described above. More existing A 0 - may each be the same or different.
- a plurality of A 0 - are, for example, "a group represented by the general formula (B-8) or (B-10) and the general formulas (B-1) to (B-7), (B-9). Or, it may have at least a group represented by (B-11) to (B-13), and a group represented by the general formula (B-7) and a group represented by the general formula (B-6). It may have at least a group represented by, and a group represented by any of the general formulas (BX-1) to (BX-4) and the general formulas (AX-1) to (AX-). It may have at least a group represented by any of 2).
- M 0 + is an organic cation (specific organic cation, or an organic cation other than the specific organic cation) represents a.
- the specific organic cation is as described above. The same applies to organic cations other than the specific organic cations.
- a plurality of M 0 + may be the same or different from each other.
- the compound (P) is preferably compound (I), compound (II), or compound (III).
- compounds (I) to (III) will be described.
- Compound (I) is the following compound.
- Compound (I) A compound having one of the following structural sites X and one of the following structural sites Y, and the following first acidic site and the following structure derived from the following structural site X by irradiation with active light or radiation.
- Structural part X Structural part consisting of anionic part A 1 ⁇ and cation part M 1 + , and forming the first acidic part represented by HA 1 by irradiation with active light or radiation
- Structural part Y Anion part a 2 - consists of a cationic sites M 2 + and, and, by irradiation with actinic rays or radiation, the represented by HA 2 having a structure different from that of the first acidic site formed by the above structural moiety
- condition I In the compound (I), the compound PI obtained by replacing the cation site M 1 + in the structural site X and the cation site M 2 + in the structural site Y with H + is contained in the structural site X.
- the acid dissociation constant a1 derived from the acidic site represented by HA 1 which is obtained by replacing the above-mentioned cation site M 1 + with H + , and the above-mentioned cation site M 2 + in the above-mentioned structural part Y are replaced with H +.
- the acid dissociation constant a1 and the acid dissociation constant a2 are obtained by the above-mentioned method. More specifically, the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI refer to the compound PI (the compound PI is a compound having HA 1 and HA 2) when the acid dissociation constant of the compound PI is obtained. .
- the compound PI corresponds to an acid generated by irradiating compound (I) with active light or radiation.
- the difference between the acid dissociation constant a1 and the acid dissociation constant a2 is preferably 0.10 to 20.00, more preferably 0.50 to 17.00, in that the effect of the present invention is more excellent. ..
- the acid dissociation constant a2 is preferably -4.00 to 15.00, more preferably -2.00 to 12.00, in that the effect of the present invention is more excellent.
- the acid dissociation constant a1 is preferably -12.00 to 1.00, more preferably -7.00 to 0.50, in that the effect of the present invention is more excellent.
- the compound (I) is not particularly limited, and examples thereof include a compound represented by the following general formula (Ia).
- M 11 + and M 12 + each independently, an organic cation (specific organic cation, or an organic cation other than the specific organic cation) represents a.
- M 11 + and M 12 + is at least one (preferably both) is preferably a specific organic cation.
- the specific organic cation is as described above.
- the organic cations other than the specific organic cations are as described above.
- a 11 - and A 12 - independently represents an anionic functional group.
- a 12 ⁇ represents a structure different from the anionic functional group represented by A 11 ⁇ .
- the anionic functional groups are as described above.
- a 11 - and A 12 - anionic functional group are each independently the general formula (B-1) a group represented by ⁇ (B-13) are preferred.
- a 11 - and A 12 - The combination of the anionic functional group represented by is not particularly limited, for example, A 11 - is a group represented by the general formula (B-8) or (B-10) If, A 12 - Table the anionic functional group represented by the general formula (B-1) ⁇ (B -7), (B-9), or (B-11) ⁇ (B -13) include groups, a 11 - when is a group represented by the general formula (B-7), a 12 - as the anionic functional group represented by the table in the general formula (B-6) The groups to be used are mentioned.
- L 1 represents a divalent linking group.
- the divalent linking group represented by L 1 is not particularly limited, and is an -CO-, -NR-, -CO-, -O-, alkylene group (preferably having 1 to 1 to carbon atoms). 6.
- a 5- to 10-membered ring having an N atom, an O atom, an S atom, or a Se atom in the ring structure is preferable, a 5- to 7-membered ring is more preferable, and a 5- to 6-membered ring is further preferable), and a plurality of these. Examples thereof include a divalent linking group in which the above are combined.
- the above R may be a hydrogen atom or a monovalent substituent.
- the monovalent substituent is not particularly limited, but for example, an alkyl group (preferably 1 to 6 carbon atoms) is preferable.
- These divalent linking groups may further include a group selected from the group consisting of -S-, -SO-, and -SO 2-.
- the alkylene group, the cycloalkylene group, the alkaneylene group, and the divalent aliphatic heterocyclic group may be substituted with a substituent.
- the substituent include a halogen atom (preferably a fluorine atom).
- Ma1 + and Ma2 + independently represent organic cations (specific organic cations or organic cations other than specific organic cations). It is preferable that at least one (preferably all) of Ma 1+ and Ma 2+ represents a specific organic cation.
- the specific organic cation is as described above. The same applies to organic cations other than the specific organic cations.
- L a represents a divalent organic group.
- the divalent organic group include -COO-, -CONH-, -CO-, -O-, an alkylene group (preferably 1 to 6 carbon atoms, which may be linear or branched), and a cycloalkylene group.
- the number of carbon atoms is 3 to 15
- an alkenylene group preferably, the number of carbon atoms is 2 to 6
- a divalent linking group in which a plurality of these are combined can be mentioned.
- One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a carbonyl carbon and / or a hetero atom (oxygen atom or the like).
- These divalent linking groups also preferably have a group selected from the group consisting of -S-, -SO-, and -SO 2-.
- L a is preferably a group represented by the following general formula (L). * A-LA-LB-LC-LD-LE- * B (L)
- * A represents the connection position with A a ⁇ in the general formula (a).
- * B is, B a in the general formula (a) - shows the point of attachment with.
- LA represents ⁇ (C (R LA1 ) (R LA2 )) XA ⁇ .
- the XA represents an integer of 1 or more, preferably 1 to 10, and more preferably 1 to 3.
- R LA1 and R LA2 independently represent a hydrogen atom or a substituent.
- R LA1 and R LA2 represent a substituent, a fluorine atom or a fluoroalkyl group is preferable, a fluorine atom or a perfluoroalkyl group is more preferable, and a fluorine atom or a perfluoromethyl group is further preferable.
- the number of XA is 2 or more, the R LA1s having XA may be the same or different.
- the R LA2 having XA may be the same or different.
- -(C (R LA1 ) (R LA2 ))- is preferably -CH 2- , -CHF-, -CH (CF 3 )-or -CF 2- .
- formula (a) in the A a - and a direct bond to - (C (R LA1) ( R LA2)) - is, -CH 2 -, - CHF - , - CH (CF 3) - or -CF It is preferably 2-.
- Formula (a) in the A a - and a direct bond to - (C (R LA1) ( R LA2)) - other than the - (C (R LA1) ( R LA2)) - are each independently, -CH 2 -, - CHF- or -CF 2 - is preferably.
- LB represents a single bond, an ester group (-COO-), or a sulfonyl group (-SO 2- ).
- LC represents a single bond, an alkylene group, a cycloalkylene group, or a group composed of a combination thereof (such as "-alkylene group-cycloalkylene group-").
- the alkylene group may be linear or branched.
- the alkylene group preferably has 1 to 5 carbon atoms, more preferably 1 to 2 carbon atoms, and even more preferably 1.
- the cycloalkylene group preferably has 3 to 15 carbon atoms, and more preferably 5 to 10 carbon atoms.
- the cycloalkylene group may be monocyclic or polycyclic. Examples of the cycloalkylene group include a norbornanediyl group and an adamantandiyl group.
- the substituent that the cycloalkylene group may have, an alkyl group (which may be linear or branched, preferably 1 to 5 carbon atoms) is preferable.
- One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a carbonyl carbon and / or a hetero atom (oxygen atom or the like).
- the alkylene group portion is preferably present on the LB side.
- the LC is preferably a single bond or a cycloalkylene group.
- LD represents a single bond, an ether group (-O-), a carbonyl group (-CO-), or an ester group (-COO-).
- LE is a single bond or - (C (R LE1) ( R LE2)) XE - represents a.
- XE in- (C (R LE1) (R LE2 )) XE- represents an integer of 1 or more, preferably 1 to 10, and more preferably 1 to 3.
- R LE1 and R LE2 independently represent a hydrogen atom or a substituent. When the number of XEs is 2 or more, the R LE1s having XEs may be the same or different. When the number of XEs is 2 or more, the R LE2s having XEs may be the same or different. Above all,-(C (R LE1 ) (R LE2 ))-is preferably -CH 2- or -CF 2-.
- LB, LC, and LD are single bonds, it is preferable that LE is also a single bond.
- a a - and B a - each independently represent an anionic functional group.
- the anionic functional groups are as described above.
- a a ⁇ is preferably a group represented by any of the general formulas (AX-1) to (AX-2).
- B a - preferably represents a general formula (BX-1) ⁇ a group represented by any one of (BX-4).
- a a - and B a - is preferably respectively different structures.
- a a - is a group represented by the general formula (AX-1), and B a - Do a group represented by any one of formulas (BX-1) ⁇ (BX -4) or, a a - is a group represented by the general formula (AX-2), and B a - general formula (BX-1), (BX -3), with either (BX-4) It is preferably the group represented.
- HA a -L a -B a in the case of seeking the acid dissociation constant for the compound represented by H, "HA a -L a -B a H” is "A a - -L a - the pKa at which the B a H "as" pKa of the group represented by HA a "further” a a - -L a -B a H "is” a a - -L a -B a - " Let pKa at the time of becoming "pKa of the group represented by B a H".
- PKa of the group represented by HA a and “pKa of the group represented by B a H” are determined by using “Software Package 1” or “Gaussian 16”, respectively.
- the pKa of the group represented by HA a corresponds to the acid dissociation constant a1 described above, and the preferred range is also the same.
- the pKa of the group represented by B a H corresponds to the acid dissociation constant a2 described above, and the preferable range is also the same.
- Compound (II) is the following compound.
- Compound (II) A compound having two or more structural sites X and the structural site Y, and having two first acidic sites derived from the structural site X by irradiation with active light or radiation.
- compound (II) satisfies the following condition II.
- Condition II In the compound (II), the compound PII obtained by replacing the cation site M 1 + in the structural site X and the cation site M 2 + in the structural site Y with H + is contained in the structural site X.
- the acid dissociation constant a1 derived from the acidic site represented by HA 1 in which the cation site M 1 + is replaced with H + , and the HA obtained by replacing the cation site M 2 + in the structural site Y with H +. It has an acid dissociation constant a2 derived from the acidic moiety represented by 2, and the acid dissociation constant a2 is larger than the acid dissociation constant a1.
- the acid dissociation constant a1 and the acid dissociation constant a2 are obtained by the above-mentioned method.
- the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PII will be described more specifically.
- compound (II) is, for example, a compound that generates an acid having two first acidic sites derived from the structural site X and one second acidic site derived from the structural site Y.
- Compound PII corresponds to "a compound having two HA 1 and HA 2". If asked for the acid dissociation constant of the compound PII, compound PII is - a pKa of acid dissociation constant a1 when the "one of A 1 and one HA 1 and HA 2 with a compound of", "two a 1 - and HA 2 compound having the "is” two a 1 - and a 2 - pKa when a compound "having a is an acid dissociation constant a2.
- the compound PII has a plurality of acid dissociation constants derived from the acidic site represented by HA 1 formed by replacing the cation site M 1 + in the structural site X with H +, the smallest value is acid. It is regarded as the dissociation constant a1.
- the compound PII corresponds to an acid generated by irradiating compound (II) with active light rays or radiation.
- the compound (II) may have a plurality of the structural sites Y.
- the difference between the acid dissociation constant a1 and the acid dissociation constant a2 is preferably 2.00 or more, and more preferably 3.00 or more, in that the effect of the present invention is more excellent.
- the upper limit of the difference between the acid dissociation constant a1 and the acid dissociation constant a2 is not particularly limited, but is, for example, 15.00 or less.
- the acid dissociation constant a2 is preferably 2.00 or less, more preferably 1.00 or less, in that the effect of the present invention is more excellent.
- the lower limit of the acid dissociation constant a2 is preferably ⁇ 2.00 or higher.
- the acid dissociation constant a1 is preferably 2.00 or less, more preferably 0.50 or less, still more preferably ⁇ 0.10 or less, in that the effect of the present invention is more excellent.
- the lower limit of the acid dissociation constant a1 is preferably -15.00 or higher.
- the compound (II) is not particularly limited, and examples thereof include a compound represented by the following general formula (IIa).
- + M 21 + and M 22 each independently represents an organic cation.
- a 21 - and A 22 - independently represents an anionic functional group.
- a 22 ⁇ represents a structure different from the anionic functional group represented by A 21 ⁇ .
- L 2 represents a (n1 + n2) valent organic group.
- n1 represents an integer of 2 or more.
- n2 represents an integer of 1 or more.
- the following general formula (IIa) corresponds to the compound represented by Compound PIIa comprising replacing organic cation represented by M 21 + and M 22 + to H + (the general formula (IIa-1) ),
- the acid dissociation constant a2 derived from the acidic moiety represented by A 22 H is larger than the acid dissociation constant a1 derived from the acidic moiety represented by HA 21.
- the preferable values of the acid dissociation constant a1 and the acid dissociation constant a2 are as described above.
- M 21 +, M 22 +, A 21 -, and, A 22 - is in each above-mentioned general formula (Ia) M 11 +, M 12 +, A 11 -, ⁇ fine a 12 - in the above formula, preferred embodiments are also the same.
- n1 pieces of M 21 + each other, n1 pieces of A 21 + each other, represent each mutually identical groups.
- T 1 represents a trivalent hydrocarbon ring group or a trivalent heterocyclic group
- T 2 is a carbon atom, a tetravalent hydrocarbon ring group, or a tetravalent. Represents the heterocyclic group of.
- the hydrocarbon ring group may be an aromatic hydrocarbon ring group or an aliphatic hydrocarbon ring group.
- the number of carbon atoms contained in the hydrocarbon ring group is preferably 6 to 18, and more preferably 6 to 14.
- the heterocyclic group may be an aromatic heterocyclic group or an aliphatic heterocyclic group.
- the heterocycle is preferably a 5- to 10-membered ring having at least one N atom, an O atom, an S atom, or a Se atom in the ring structure, more preferably a 5- to 7-membered ring, and a 5- to 6-membered ring. Rings are more preferred.
- L 21 and L 22 independently represent a single bond or a divalent linking group, respectively.
- the divalent linking group represented by L 21 and L 22 has the same meaning as the divalent linking group represented by L 1 in the general formula (Ia), and the preferred embodiment is also the same.
- n1 represents an integer of 2 or more.
- the upper limit is not particularly limited, but is, for example, 6 or less, preferably 4 or less, and more preferably 3 or less.
- n2 represents an integer of 1 or more.
- the upper limit is not particularly limited, but is, for example, 3 or less, preferably 2 or less.
- M b1 + and M b2 + independently represent organic cations (specific organic cations or organic cations other than specific organic cations).
- M b1 + and M b2 + has the same meaning as each M a1 + and M in general formula (a) a2 +, it is also the same preferred embodiment.
- L b represents an organic group having a (nb + 1) valence.
- Examples of the (nb + 1) -valent organic group include the groups represented by the above (A1) and the above (A2).
- at least nb number of * is A b - represents a bonding site to the, at least one of * B b - represents a bonding site to the.
- the divalent linking group represented by L 21 and L 22 similar to the divalent linking group represented by L a in the general formula (a) It is preferably a divalent linking group of.
- a b - and B b - each independently represent an anionic functional group.
- a b - and B b - each A a in general formula (a) - and B a - has the same meaning as, and their preferred embodiments are also the same.
- nb represents an integer of 2 or more.
- the plurality of M b1 + and Ab ⁇ may be the same or different from each other.
- the upper limit of nb is not particularly limited, but is, for example, 6 or less, preferably 4 or less, and more preferably 3 or less.
- M b1 + and M b2 + of the compound represented by is substituted with hydrogen atoms, respectively (HA b) a compound represented by nb -L b -B b H, in HA b
- the pKa of the group represented is smaller than the pKa of the group represented by B b H.
- Compound (III) A compound having two or more of the structural site X and the following structural site Z, wherein the first acidic site derived from the structural site X is 2 by irradiation with active light or radiation.
- Structural site Z Nonionic organic site capable of neutralizing the acid
- the nonionic organic moiety capable of neutralizing the acid in the structural moiety Z is not particularly limited, and is, for example, an organic moiety containing a functional group having a group or an electron capable of electrostatically interacting with a proton. Is preferable.
- a functional group having a group or an electron capable of electrostatically interacting with a proton a functional group having a macrocyclic structure such as a cyclic polyether or a nitrogen atom having an unshared electron pair that does not contribute to ⁇ conjugation is used. Examples thereof include functional groups having.
- the nitrogen atom having an unshared electron pair that does not contribute to ⁇ conjugation is, for example, a nitrogen atom having a partial structure shown in the following formula.
- Substructures of functional groups having groups or electrons that can electrostatically interact with protons include, for example, crown ether structure, aza-crown ether structure, 1-3 amine structure, pyridine structure, imidazole structure, and pyrazine structure. Etc., and among them, the 1st to 3rd grade amine structure is preferable.
- the acid dissociation constant a1 derived from the acidic moiety represented by is preferably 2.0 or less, more preferably 0.5 or less, still more preferably ⁇ 0.1 or less, in that the effect of the present invention is more excellent.
- the lower limit of the acid dissociation constant a1 is preferably -15.0 or higher.
- compound PIII has a plurality of acid dissociation constants derived from the acidic site represented by HA 1 in which the cation site M 1 + in the structural site X is replaced with H +, the smallest value is acid. It is regarded as the dissociation constant a1. That is, when compound (III) is, for example, a compound that generates an acid having two first acidic sites derived from the structural site X and the structural site Z, the compound PIII is "two HA 1". It corresponds to "a compound having.” If asked for the acid dissociation constant of the compound PIII, compound PIII is - pKa when the "one of A 1 and a compound having one HA 1" is an acid dissociation constant a1.
- compound PIII when compound PIII has a plurality of acid dissociation constants derived from the acidic site represented by HA 1 in which the cation site M 1 + in the structural site X is replaced with H +, the smallest value is acid. It is regarded as the dissociation constant a1.
- the compound PIII in which the cation site M 1 + in the structural site X is replaced with H + is, for example, a compound in which the compound (III) is represented by the compound (IIIa) described later. If, HA 31- L 3- N (R 2X ) -L 4- A 31 H corresponds.
- the compound (III) is not particularly limited, and examples thereof include a compound represented by the following general formula (IIIa).
- M 31 + A 31 - corresponds to the structural moiety X.
- Compound (IIIa) produces an acid represented by HA 31- L 3- N (R 2X ) -L 4- A 31 H by irradiation with active light or radiation. That is, "M 31 + A 31 -” forms a first acidic moiety represented by HA 31.
- M 31 + represents an organic cation.
- a 31 - represents an anionic functional group.
- L 3 and L 4 each independently represent a divalent linking group.
- R 2X represents a monovalent organic group.
- M 31 +, and A 31 - each M 11 + in general formula (Ia), and A 11 - in the above formula preferred embodiments are also the same.
- L 3 and L 4 are synonymous with L 1 in the general formula (Ia) described above, and the preferred embodiments are also the same.
- two M 31 + each other, and two A 31 - each other represent each mutually identical groups.
- the monovalent organic group represented by R 2X is not particularly limited, and for example, -CH 2- is -CO-, -NH-, -O-, -S-,-. SO-, and -SO 2 - may be substituted with one or more combinations selected from the group consisting of an alkyl group (preferably may be 1-10 either linear or branched carbon atoms. ), Cycloalkyl group (preferably 3 to 15 carbon atoms), alkenyl group (preferably 2 to 6 carbon atoms) and the like. Moreover, the said alkylene group, the said cycloalkylene group, and the said alkaneylene group may be substituted with a substituent.
- Mc + represents an organic cation (organic cation other than the specific organic cation or the specific organic cation).
- M c + has the same meaning as M a1 + in general formula (a), and their preferred embodiments are also the same.
- Ac ⁇ represents an anionic functional group.
- Ac ⁇ has the same meaning as A a ⁇ in the general formula (a) described above, and the preferred embodiment is also the same.
- nc represents an integer of 2 or more.
- the plurality of Mc + and Ac ⁇ may be the same or different from each other.
- the upper limit of nc is not particularly limited, but is, for example, 6 or less, preferably 4 or less, and more preferably 3 or less.
- L c represents a nonionic organic moiety capable of neutralizing the acid.
- a preferred embodiment of L c is the same as that of the structural part Z described above.
- the molecular weight of compound (P) is preferably 300 to 3000, more preferably 500 to 2000, and even more preferably 700 to 1500.
- the compound (P) is illustrated below.
- the combination of the organic cation and the organic anion in the following compound (P) may be replaced as appropriate.
- the numerical value attached to the organic anion of the compound (P) indicates the acid dissociation constant derived from each acidic site formed when each anionic functional group in the organic anion is bonded to H + instead of the organic cation.
- the content of the photoacid generator in the composition of the present invention is not particularly limited, but is preferably 5% by mass or more based on the total solid content of the composition of the present invention in that the effect of the present invention is more excellent. 9% by mass or more is more preferable, and 15% by mass or more is further preferable. The content is preferably 45% by mass or less, more preferably 40% by mass or less, and further preferably 35% by mass or less.
- the photoacid generator may be used alone or in combination of two or more.
- the composition of the present invention may further contain an acid diffusion control agent.
- the acid diffusion control agent acts as a quencher for trapping the acid generated from the photoacid generator, and plays a role of controlling the acid diffusion phenomenon in the resist film.
- the acid diffusion control agent may be, for example, a basic compound.
- the basic compound is preferably a compound having a structure represented by the following general formulas (A) to (E).
- R 200 , R 201 and R 202 may be the same or different, and may be the same or different, and may be a hydrogen atom, an alkyl group (preferably 1 to 20 carbon atoms), or a cycloalkyl group (preferably 1 to 20 carbon atoms). Represents an aryl group (preferably 6 to 20 carbon atoms), and R 201 and R 202 may be bonded to each other to form a ring.
- the alkyl group having a substituent is preferably an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms.
- R 203 , R 204 , R 205 and R 206 may be the same or different and represent an alkyl group having 1 to 20 carbon atoms. It is more preferable that the alkyl groups in the general formula (A) and the general formula (E) are unsubstituted.
- the acid diffusion control agent has a proton-accepting functional group and is decomposed by irradiation with active light or radiation to reduce or eliminate the proton accepting property, or generate a compound in which the proton accepting property is changed to acidic. It may be a compound (PA). Regarding the above compound (PA), the description in paragraphs [0198] to [0203] of International Publication No. 2018/193954 can be referred to, and these contents are incorporated in the present specification.
- Small molecule compounds having a nitrogen atom and having a group desorbed by the action of an acid can also be used as an acid diffusion control agent.
- the small molecule compound is preferably an amine derivative having a group on the nitrogen atom that is eliminated by the action of an acid.
- the group eliminated by the action of the acid is preferably an acetal group, a carbonate group, a carbamate group, a tertiary ester group, a tertiary hydroxyl group, or a hemiaminol ether group, and a carbamate group or a hemiaminol ether group is more preferable.
- the molecular weight of the small molecule compound is preferably 100 to 1000, more preferably 100 to 700, and even more preferably 100 to 500.
- the small molecule compound may have a carbamate group having a protecting group on the nitrogen atom.
- composition of the present invention may contain an acid diffusion control agent other than the above.
- the content of the acid diffusion control agent is preferably 0.001 to 15% by mass, preferably 0.01 to 15% by mass, based on the total solid content of the composition of the present invention. 8% by mass is more preferable.
- the acid diffusion control agent may be used alone or in combination of two or more.
- the molar ratio is preferably 2.5 or more from the viewpoint of sensitivity and resolution, and the molar ratio is preferably 300 or less from the viewpoint of suppressing a decrease in resolution due to the thickening of the resist pattern over time from exposure to heat treatment.
- the photoacid generator / acid diffusion control agent (molar ratio) is more preferably 5.0 to 200, and even more preferably 7.0 to 150.
- Examples of the acid diffusion control agent include the compounds described in paragraphs [0140] to [0144] of JP2013-11833A (amine compounds, amide group-containing compounds, urea compounds, nitrogen-containing heterocyclic compounds, etc.). Can also be mentioned.
- composition of the present invention may contain a hydrophobic resin different from the resin (A) in addition to the resin (A).
- Hydrophobic resin from the viewpoint of uneven distribution in the film surface layer, "fluorine atom”, “silicon atom”, and has any one or more "CH 3 partial structure contained in the side chain portion of the resin" It is preferable, and it is more preferable to have two or more kinds. Further, the hydrophobic resin preferably has a hydrocarbon group having 5 or more carbon atoms. These groups may be contained in the main chain of the resin or may be substituted in the side chain.
- the resins described in JP2011-24801A, JP2010-175859, and JP2012-032544 can also be preferably used.
- the content of the hydrophobic resin is preferably 0.01 to 20% by mass, preferably 0.1 to 15% by mass, based on the total solid content of the composition of the present invention. % Is more preferable.
- the composition of the present invention may contain a solvent.
- the solvent is not particularly limited, but (M1) propylene glycol monoalkyl ether carboxylate, and (M2) propylene glycol monoalkyl ether, lactic acid ester, acetate ester, alkoxypropionic acid ester, chain ketone, cyclic ketone, lactone, and , At least one selected from the group consisting of alkylene carbonates.
- the solvent may further contain components other than the components (M1) and (M2).
- the description in paragraphs [0187] to [0197] of International Publication No. 2019/08890 can be referred to, and these contents are incorporated in the present specification.
- the content of the solvent in the composition of the present invention is preferably set so that the solid content concentration is 0.5 to 30% by mass, and more preferably 1 to 20% by mass. In this way, the coatability of the composition of the present invention can be further improved.
- the solid content concentration is the mass percentage of the mass of other components excluding the solvent with respect to the total mass of the composition of the present invention.
- the composition of the present invention may contain a surfactant.
- a surfactant When a surfactant is included, a pattern having better adhesion and fewer development defects can be formed.
- the surfactant is preferably a fluorine-based and / or silicon-based surfactant.
- the descriptions in paragraphs [0183] to [0184] of International Publication No. 2019/088900 can be referred to, and these contents are incorporated in the present specification.
- the content of the surfactant is preferably 0.0001 to 2% by mass, more preferably 0.0005 to 1% by mass, based on the total solid content of the composition. preferable.
- the composition of the present invention comprises a dissolution inhibitory compound, a dye, a plasticizer, a photosensitizer, a light absorber, and / or a compound that promotes solubility in a developing solution (for example, a phenol compound having a molecular weight of 1000 or less, or a carboxylic acid). It may further contain an alicyclic or aliphatic compound containing an acid group).
- composition of the present invention may further contain a dissolution inhibitory compound.
- a dissolution inhibitory compound is a compound having a molecular weight of 3000 or less, which is decomposed by the action of an acid to reduce its solubility in an organic developer.
- the composition of the present invention relates to a sensitive light-sensitive or radiation-sensitive resin composition whose properties change in response to irradiation with active light or radiation. More specifically, the composition of the present invention comprises a semiconductor manufacturing process such as an IC (Integrated Circuit), a circuit substrate manufacturing such as a liquid crystal or a thermal head, a molding structure for imprinting, another photofabrication step, or a photofabrication step.
- the present invention relates to a lithographic printing plate or a radiation-sensitive or radiation-sensitive resin composition used for producing an acid-curable composition.
- the pattern formed in the present invention can be used in an etching step, an ion implantation step, a bump electrode forming step, a rewiring forming step, a MEMS (Micro Electro Mechanical Systems), and the like.
- the present invention also relates to a sensitive light or radiation sensitive film formed by the sensitive light or radiation composition of the present invention.
- a sensitive light or radiation sensitive film formed by the sensitive light or radiation composition of the present invention.
- Such a film is formed, for example, by applying the composition of the present invention onto a support such as a substrate.
- the thickness of this film is preferably 0.02 to 0.1 ⁇ m.
- As a method of coating on the substrate it is applied on the substrate by an appropriate coating method such as spin coating, roll coating, flow coating, dip coating, spray coating, doctor coating, etc., but spin coating is preferable, and the number of rotations thereof is high. 1000-3000 rpm (rotations per minute) is preferable.
- the coating film is prebaked at 60 to 150 ° C.
- the material forming the substrate to be processed and its outermost layer for example, in the case of a semiconductor wafer, a silicon wafer can be used, and examples of the material to be the outermost layer include Si, SiO 2 , SiN, SiON, TiN, and the like.
- WSi, BPSG, SOG, organic antireflection film and the like can be mentioned.
- the present invention also relates to a mask blank provided with an actinic cheilitis or radiation-sensitive film coated with the actinic cheilitis or radiation-sensitive resin composition obtained as described above.
- mask blanks the descriptions in paragraphs [0265] to [0271] of JP-A-2018-10299 can be referred to, and these contents are incorporated in the present specification.
- Step 1 A step of forming a resist film on a substrate using the composition of the present invention
- Step 2 A step of exposing the resist film (preferably with an electron beam (EB) or EUV)
- Step 3 Using a developing solution Steps for developing the exposed resist film and forming a pattern
- Step 1 is a step of forming a resist film on a substrate using the composition of the present invention.
- the composition of the present invention is as described above.
- Examples of the method of forming a resist film on a substrate using the composition of the present invention include a method of applying the composition of the present invention on a substrate. It is preferable that the composition of the present invention is filtered by a filter as necessary before coating.
- the pore size of the filter is preferably 0.1 ⁇ m or less, more preferably 0.05 ⁇ m or less, and even more preferably 0.03 ⁇ m or less.
- the filter is preferably made of polytetrafluoroethylene, polyethylene, or nylon.
- the film thickness of the resist film is not particularly limited, but 10 to 65 nm is preferable, and 15 to 50 nm is more preferable, from the viewpoint of being able to form a fine pattern with higher accuracy.
- Step 2 is a step of exposing the resist film (preferably with an electron beam (EB) or EUV).
- the exposure method include a method of irradiating the formed resist film with an electron beam (EB) or EUV through a predetermined mask.
- the heating temperature is preferably 80 to 150 ° C, more preferably 80 to 140 ° C, and even more preferably 80 to 130 ° C.
- the heating time is preferably 10 to 1000 seconds, more preferably 10 to 180 seconds, and even more preferably 30 to 120 seconds.
- the heating can be carried out by means provided in a normal exposure machine and / or a developing machine, and may be carried out by using a hot plate or the like. This process is also called post-exposure baking.
- Step 3 is a step of developing the exposed resist film using a developing solution to form a pattern.
- the developer may be an alkaline developer or a developer containing an organic solvent (hereinafter, also referred to as an organic developer).
- Examples of the developing method include a method of immersing the substrate in a tank filled with a developing solution for a certain period of time (dip method), and a method of raising the developing solution on the surface of the substrate by surface tension and allowing it to stand still for a certain period of time (paddle method). ), A method of spraying the developer on the surface of the substrate (spray method), and a method of continuing to discharge the developer while scanning the developer discharge nozzle at a constant speed on the substrate rotating at a constant speed (dynamic discharge method). ). Further, after the step of performing the development, a step of stopping the development may be carried out while substituting with another solvent.
- the development time is not particularly limited as long as the resin in the unexposed portion is sufficiently dissolved, and is preferably 10 to 300 seconds, more preferably 20 to 120 seconds.
- the temperature of the developing solution is preferably 0 to 50 ° C, more preferably 15 to 35 ° C.
- the alkaline developer it is preferable to use an alkaline aqueous solution containing an alkali.
- the alkali concentration of the alkaline developer is usually 0.1 to 20% by mass.
- the pH of the alkaline developer is usually 10.0 to 15.0.
- the description in paragraph [0304] of JP-A-2019-174549 can be referred to, and these contents are incorporated in the present specification.
- the organic developer is a developer containing at least one organic solvent selected from the group consisting of a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent, an ether solvent, and a hydrocarbon solvent. It is preferable to have.
- JP-A-2019-174549 the description in paragraph [0306] of JP-A-2019-174549 can be referred to, and these contents are incorporated in the present specification.
- the alcohol solvent for example, the solvents disclosed in paragraphs [0715] to [0718] of US Patent Application Publication No. 2016/0070167A1 can be used. ..
- a plurality of the above solvents may be mixed, or may be mixed with a solvent other than the above or water.
- the water content of the developer as a whole is preferably less than 50% by mass, more preferably less than 20% by mass, further preferably less than 10% by mass, and particularly preferably substantially free of water.
- the content of the organic solvent in the organic developer is preferably 50% by mass or more and 100% by mass or less, more preferably 80% by mass or more and 100% by mass or less, and 90% by mass or more and 100% by mass or less, based on the total amount of the developing solution. The following is more preferable, and 95% by mass or more and 100% by mass or less is particularly preferable.
- the pattern forming method preferably includes a step of washing with a rinsing liquid (rinsing step) after the step 3.
- rinsing step the descriptions in paragraphs [0316] to [0320] of JP-A-2019-174549 can be referred to, and these contents are incorporated in the present specification.
- the pattern forming method of the present invention may include a heating step (Post Bake) after the rinsing step. In this step, the developing solution and the rinsing solution remaining between the patterns and inside the patterns are removed by baking. In addition, this step has the effect of smoothing the resist pattern and improving the surface roughness of the pattern.
- the heating step after the rinsing step is usually performed at 40 to 250 ° C. (preferably 90 to 200 ° C.) for 10 seconds to 3 minutes (preferably 30 seconds to 120 seconds).
- the substrate may be etched using the formed pattern as a mask. That is, the pattern formed in step 3 may be used as a mask to process the substrate (or the underlayer film and the substrate) to form the pattern on the substrate.
- the description in paragraph [0238] of International Publication No. 2018/193954 can be taken into consideration, and these contents are incorporated in the present specification.
- composition of the present invention and various materials used in the pattern forming method of the present invention are made of metal. It is preferable that it does not contain impurities such as.
- the content of impurities contained in these materials is preferably 1 mass ppm or less, more preferably 10 mass ppt or less, further preferably 100 mass ppt or less, particularly preferably 10 mass ppt or less, and most preferably 1 mass ppt or less.
- examples of the metal impurities include Na, K, Ca, Fe, Cu, Mg, Al, Li, Cr, Ni, Sn, Ag, As, Au, Ba, Cd, Co, Pb, Ti, V, etc. W, Zn and the like can be mentioned.
- the present invention also relates to a method for manufacturing an electronic device including the above-mentioned pattern forming method, and an electronic device manufactured by this manufacturing method.
- the electronic device of the present invention is suitably mounted on an electric electronic device (home appliance, OA (Office Automation), media-related device, optical device, communication device, etc.).
- the weight average molecular weight by GPC was 9000, and the dispersity (Mw / Mn) was 1.77. 13
- the composition ratio of the resin A-1 calculated by C-NMR measurement was 20/60/20 (a1 / b1 / c4) in terms of mass ratio.
- the weight average molecular weight by GPC was 9000, and the dispersity (Mw / Mn) was 1.67. 13
- the composition ratio of the resin A-21 calculated by C-NMR measurement was 20/60/20 (a14 / b1 / c4) in terms of mass ratio.
- the resin (A) shown in Tables 1 to 3 was synthesized by the same method as in the synthesis example of the resin A-1 except that the monomer used was changed.
- the composition ratio of the resin was calculated by 1 H-NMR (nuclear magnetic resonance) or 13 C-NMR measurement.
- the weight average molecular weight (Mw: polystyrene conversion) and the dispersity (Mw / Mn) of the resin were calculated by GPC (solvent: THF) measurement.
- the content of each repeating unit mass ratio of each repeating unit to all repeating units of the resin (A) (unit: mass%)
- Mw weight average molecular weight
- Mw weight average molecular weight
- each repeating unit is shown below.
- Photoacid generator B The photoacid generator used is shown below.
- Acid diffusion control agent D The acid diffusion control agent used is shown below.
- the weight average molecular weight (Mw) and dispersity (Mw / Mn) of E-1 to E-4 were measured by GPC (carrier: tetrahydrofuran (THF)) (in terms of polystyrene).
- the composition ratio (molar ratio) of the resin was measured by 13 C-NMR.
- H-1 Megafuck F176 (manufactured by DIC Corporation, fluorine-based surfactant)
- H-2 Megafuck R08 (manufactured by DIC Corporation, fluorine and silicon-based surfactant)
- the underlayer film forming composition AL412 (manufactured by Brewer Science) was applied onto a silicon wafer and baked at 205 ° C. for 60 seconds to form a base film having a film thickness of 20 nm.
- the resin composition shown in Table 7 was applied thereto and baked at 100 ° C. for 60 seconds to form a resist film having a film thickness of 30 nm.
- an EUV exposure apparatus Micro Exposure Tool, NA0.3, Quadrupole, outer sigma 0.68, inner sigma 0.36, manufactured by Exitech
- pattern irradiation was performed on the silicon wafer having the obtained resist film. rice field.
- the resist film after exposure was baked at 90 ° C. for 60 seconds, developed with n-butyl acetate for 30 seconds, and spin-dried to obtain a negative pattern.
- the resist film after exposure was baked at 90 ° C. for 60 seconds, developed with an aqueous solution of tetramethylammonium hydroxide (2.38% by mass) for 30 seconds, and then rinsed with pure water for 30 seconds. Then, this was spin-dried to obtain a positive pattern.
- the LWR performance and the collapse front width were evaluated by the same method as described above.
- the mixture was heated on a hot plate at 110 ° C. for 60 seconds. Further, it was developed at 23 ° C. for 60 seconds using an aqueous solution of tetramethylammonium hydroxide having a concentration of 2.38% by mass, rinsed with pure water for 30 seconds, and then spin-dried to obtain a positive pattern.
- the fall front width was evaluated by the same method as described above.
- a sensitive ray-sensitive or radiation-sensitive resin composition capable of suppressing pattern collapse and forming a pattern having excellent roughness performance
- the above-mentioned sensitivity Sensitive ray-sensitive or radiation-sensitive resin film formed of a light-sensitive or radiation-sensitive resin composition
- mask blanks provided with the above-mentioned sensitive light-sensitive or radiation-sensitive resin film
- the above-mentioned sensitive light-sensitive or radiation-sensitive resin film A pattern forming method using a resin composition and a method for producing an electronic device can be provided.
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Abstract
According to the present invention, provided is an active light ray-sensitive or radiation-sensitive resin composition which contains: a resin that has a specific repeating unit having a group having a cyclic structure containing a carbonic acid ester group or a group having a cyclic structure containing a SO2 group, and that has a repeating unit having an acid-dissociable group; and a compound that generates an acid upon irradiation with active light rays or radiation. Also provided are: an active light ray-sensitive or radiation-sensitive resin film formed from the composition; a mask blank provided with the film; a method for forming a pattern using the composition; and a method for producing an electronic device.
Description
本発明は、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、マスクブランクス、パターン形成方法及び電子デバイスの製造方法に関する。
The present invention relates to a sensitive light-sensitive or radiation-sensitive resin composition, a sensitive light-sensitive or radiation-sensitive film, mask blanks, a pattern forming method, and a method for manufacturing an electronic device.
IC(Integrated Circuit、集積回路)及びLSI(Large Scale Integrated circuit、大規模集積回路)等の半導体デバイスの製造プロセスにおいては、感光性組成物を用いたリソグラフィーによる微細加工が行われている。
リソグラフィーの方法として、感光性組成物によりレジスト膜を形成した後、得られた膜を露光して、その後、現像する方法が挙げられる。特に、近年、露光の際にEB(Electron Beam)、EUV(Extreme ultraviolet)を用いる検討がなされている。 In the manufacturing process of semiconductor devices such as ICs (Integrated Circuits, integrated circuits) and LSIs (Large Scale Integrated Circuits, large-scale integrated circuits), microfabrication by lithography using a photosensitive composition is performed.
Examples of the lithography method include a method of forming a resist film with a photosensitive composition, exposing the obtained film, and then developing the film. In particular, in recent years, studies have been made on the use of EB (Electron Beam) and EUV (Extreme ultraviolet) during exposure.
リソグラフィーの方法として、感光性組成物によりレジスト膜を形成した後、得られた膜を露光して、その後、現像する方法が挙げられる。特に、近年、露光の際にEB(Electron Beam)、EUV(Extreme ultraviolet)を用いる検討がなされている。 In the manufacturing process of semiconductor devices such as ICs (Integrated Circuits, integrated circuits) and LSIs (Large Scale Integrated Circuits, large-scale integrated circuits), microfabrication by lithography using a photosensitive composition is performed.
Examples of the lithography method include a method of forming a resist film with a photosensitive composition, exposing the obtained film, and then developing the film. In particular, in recent years, studies have been made on the use of EB (Electron Beam) and EUV (Extreme ultraviolet) during exposure.
特許文献1には、特定の基を有する繰り返し単位を含む樹脂と、活性光線又は放射線の照射により酸を発生する化合物とを含有する感活性光線性又は感放射線性樹脂組成物が記載されている。
特許文献2には、特定の構造単位と環状エーテル構造又は環状カーボネート構造を含む構造単位とを有する重合体、及び酸発生体を含有するポジ型感放射線性樹脂組成物が記載されている。 Patent Document 1 describes a sensitive light-sensitive or radiation-sensitive resin composition containing a resin containing a repeating unit having a specific group and a compound that generates an acid by irradiation with active light or radiation. ..
Patent Document 2 describes a positive radiation-sensitive resin composition containing a polymer having a specific structural unit and a structural unit containing a cyclic ether structure or a cyclic carbonate structure, and an acid generator.
特許文献2には、特定の構造単位と環状エーテル構造又は環状カーボネート構造を含む構造単位とを有する重合体、及び酸発生体を含有するポジ型感放射線性樹脂組成物が記載されている。 Patent Document 1 describes a sensitive light-sensitive or radiation-sensitive resin composition containing a resin containing a repeating unit having a specific group and a compound that generates an acid by irradiation with active light or radiation. ..
Patent Document 2 describes a positive radiation-sensitive resin composition containing a polymer having a specific structural unit and a structural unit containing a cyclic ether structure or a cyclic carbonate structure, and an acid generator.
近年、EB、EUVを用いて形成されるパターンの超微細化が求められており、例えば、ピッチ50nm以下の超微細パターンの形成において、得られるパターンのラフネス性能を確保しつつ、パターン倒れを抑制できる感活性光線性又は感放射線性樹脂組成物が求められている。
上記特許文献1には、ピッチ90nmのパターン形成において、パターン倒れを抑制できる感活性光線性又は感放射線性樹脂組成物が記載されているが、より微細なピッチ50nm以下の超微細パターンの形成において、パターン倒れを抑制できる具体的な組成物は開示されていなかった。また、ラフネス性能についての記載はなく、検討の余地が残されていた。
上記特許文献2にはポジ型感放射線性樹脂組成物が記載されているが、EB、EUVを用いて形成されるパターンの超微細化については具体的に記載されておらず、パターン倒れ、ラフネス性能についての記載もない。 In recent years, ultra-miniaturization of patterns formed using EB and EUV has been required. For example, in the formation of ultra-fine patterns having a pitch of 50 nm or less, pattern collapse is suppressed while ensuring the roughness performance of the obtained pattern. There is a demand for a sensitive light-sensitive or radiation-sensitive resin composition that can be produced.
The above-mentioned Patent Document 1 describes an actinic light-sensitive or radiation-sensitive resin composition capable of suppressing pattern collapse in pattern formation having a pitch of 90 nm, but in forming an ultrafine pattern having a finer pitch of 50 nm or less. , A specific composition capable of suppressing pattern collapse has not been disclosed. In addition, there was no description about roughness performance, leaving room for consideration.
The above-mentioned Patent Document 2 describes a positive radiation-sensitive resin composition, but does not specifically describe ultrafineness of a pattern formed by using EB and EUV, and the pattern collapses and roughness. There is no description about performance.
上記特許文献1には、ピッチ90nmのパターン形成において、パターン倒れを抑制できる感活性光線性又は感放射線性樹脂組成物が記載されているが、より微細なピッチ50nm以下の超微細パターンの形成において、パターン倒れを抑制できる具体的な組成物は開示されていなかった。また、ラフネス性能についての記載はなく、検討の余地が残されていた。
上記特許文献2にはポジ型感放射線性樹脂組成物が記載されているが、EB、EUVを用いて形成されるパターンの超微細化については具体的に記載されておらず、パターン倒れ、ラフネス性能についての記載もない。 In recent years, ultra-miniaturization of patterns formed using EB and EUV has been required. For example, in the formation of ultra-fine patterns having a pitch of 50 nm or less, pattern collapse is suppressed while ensuring the roughness performance of the obtained pattern. There is a demand for a sensitive light-sensitive or radiation-sensitive resin composition that can be produced.
The above-mentioned Patent Document 1 describes an actinic light-sensitive or radiation-sensitive resin composition capable of suppressing pattern collapse in pattern formation having a pitch of 90 nm, but in forming an ultrafine pattern having a finer pitch of 50 nm or less. , A specific composition capable of suppressing pattern collapse has not been disclosed. In addition, there was no description about roughness performance, leaving room for consideration.
The above-mentioned Patent Document 2 describes a positive radiation-sensitive resin composition, but does not specifically describe ultrafineness of a pattern formed by using EB and EUV, and the pattern collapses and roughness. There is no description about performance.
本発明は、超微細パターン(例えば、ピッチ50nm以下のパターン)において、パターン倒れが抑制でき、かつラフネス性能に優れるパターンを形成できる感活性光線性又は感放射線性樹脂組成物、上記感活性光線性又は感放射線性樹脂組成物により形成された感活性光線性又は感放射線性樹脂膜、上記感活性光線性又は感放射線性樹脂膜を備えたマスクブランクス、上記感活性光線性又は感放射線性樹脂組成物を用いるパターン形成方法及び電子デバイスの製造方法を提供することを課題とする。
The present invention is a sensitive ray-sensitive or radiation-sensitive resin composition capable of forming a pattern capable of suppressing pattern collapse and having excellent roughness performance in an ultrafine pattern (for example, a pattern having a pitch of 50 nm or less). Alternatively, a sensitive light-sensitive or radiation-sensitive resin film formed of the radiation-sensitive resin composition, a mask blank having the above-mentioned sensitive light-sensitive or radiation-sensitive resin film, the above-mentioned sensitive light-sensitive or radiation-sensitive resin composition. An object of the present invention is to provide a pattern forming method using an object and a method for manufacturing an electronic device.
本発明者らは鋭意検討し、下記手段により上記課題が解決できることを見出した。
The present inventors have studied diligently and found that the above problems can be solved by the following means.
[1]
下記一般式(1)で表される繰り返し単位(1a)及び酸分解性基を有する繰り返し単位(1b)を含む樹脂(A)と、
活性光線又は放射線の照射により酸を発生する化合物(B)と、
を含有する感活性光線性又は感放射線性樹脂組成物。 [1]
A resin (A) containing a repeating unit (1a) represented by the following general formula (1) and a repeating unit (1b) having an acid-degradable group,
Compound (B) that generates acid by irradiation with active light or radiation, and
A sensitive light-sensitive or radiation-sensitive resin composition containing.
下記一般式(1)で表される繰り返し単位(1a)及び酸分解性基を有する繰り返し単位(1b)を含む樹脂(A)と、
活性光線又は放射線の照射により酸を発生する化合物(B)と、
を含有する感活性光線性又は感放射線性樹脂組成物。 [1]
A resin (A) containing a repeating unit (1a) represented by the following general formula (1) and a repeating unit (1b) having an acid-degradable group,
Compound (B) that generates acid by irradiation with active light or radiation, and
A sensitive light-sensitive or radiation-sensitive resin composition containing.
一般式(1)中、
R1は炭酸エステル基を含む環状構造を有する基、又はSO2基を含む環状構造を有する基を表す。ただし、上記SO2基中の硫黄原子の2つの結合手はいずれも酸素原子と結合することはない。
R2は水素原子、ハロゲン原子、水酸基又は有機基を表す。
R3は水素原子、ハロゲン原子又はアルキル基を表す。
L1は単結合又は2価の連結基を表す。
L2は単結合又は2価の連結基を表す。
Xは-COO-、-O-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
m1及びn1は各々1~4の整数を表す。ただし、m1+n1=5を満たす。
R1、R2、X及びL1が複数存在する場合、複数のR1、R2、X及びL1は、それぞれ同じであっても異なっていてもよい。
[2]
上記一般式(1)中のL2が単結合を表す、[1]に記載の感活性光線性又は感放射線性樹脂組成物。
[3]
上記一般式(1)中のR1が、炭酸エステル基を含む環状構造を有する基、又は硫黄原子の2つの結合手がいずれも炭素原子又は窒素原子と結合しているSO2基を含む環状構造を有する基を表す、[1]又は[2]に記載の感活性光線性又は感放射線性樹脂組成物。
[4]
上記繰り返し単位(1a)が下記一般式(2)で表される、[1]~[3]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。 In general formula (1),
R 1 represents a group having a cyclic structure containing a carbonic acid ester group or a group having a cyclic structure containing SO 2 groups. However, neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom.
R 2 represents a hydrogen atom, a halogen atom, a hydroxyl group or an organic group.
R 3 represents a hydrogen atom, a halogen atom or an alkyl group.
L 1 represents a single bond or a divalent linking group.
L 2 represents a single bond or a divalent linking group.
X is -COO -, - O -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
m 1 and n 1 each represent an integer of 1 to 4. However, m 1 + n 1 = 5 is satisfied.
If R 1, R 2, X and L 1 there are a plurality, the plurality of R 1, R 2, X and L 1 may be different from one another respectively the same.
[2]
The actinic or radiation-sensitive resin composition according to [1], wherein L 2 in the general formula (1) represents a single bond.
[3]
R 1 in the above general formula (1) is a group having a cyclic structure containing a carbonic acid ester group, or a cyclic containing SO 2 groups in which two bonds of a sulfur atom are both bonded to a carbon atom or a nitrogen atom. The sensitive light-sensitive or radiation-sensitive resin composition according to [1] or [2], which represents a group having a structure.
[4]
The actinic light-sensitive or radiation-sensitive resin composition according to any one of [1] to [3], wherein the repeating unit (1a) is represented by the following general formula (2).
R1は炭酸エステル基を含む環状構造を有する基、又はSO2基を含む環状構造を有する基を表す。ただし、上記SO2基中の硫黄原子の2つの結合手はいずれも酸素原子と結合することはない。
R2は水素原子、ハロゲン原子、水酸基又は有機基を表す。
R3は水素原子、ハロゲン原子又はアルキル基を表す。
L1は単結合又は2価の連結基を表す。
L2は単結合又は2価の連結基を表す。
Xは-COO-、-O-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
m1及びn1は各々1~4の整数を表す。ただし、m1+n1=5を満たす。
R1、R2、X及びL1が複数存在する場合、複数のR1、R2、X及びL1は、それぞれ同じであっても異なっていてもよい。
[2]
上記一般式(1)中のL2が単結合を表す、[1]に記載の感活性光線性又は感放射線性樹脂組成物。
[3]
上記一般式(1)中のR1が、炭酸エステル基を含む環状構造を有する基、又は硫黄原子の2つの結合手がいずれも炭素原子又は窒素原子と結合しているSO2基を含む環状構造を有する基を表す、[1]又は[2]に記載の感活性光線性又は感放射線性樹脂組成物。
[4]
上記繰り返し単位(1a)が下記一般式(2)で表される、[1]~[3]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。 In general formula (1),
R 1 represents a group having a cyclic structure containing a carbonic acid ester group or a group having a cyclic structure containing SO 2 groups. However, neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom.
R 2 represents a hydrogen atom, a halogen atom, a hydroxyl group or an organic group.
R 3 represents a hydrogen atom, a halogen atom or an alkyl group.
L 1 represents a single bond or a divalent linking group.
L 2 represents a single bond or a divalent linking group.
X is -COO -, - O -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
m 1 and n 1 each represent an integer of 1 to 4. However, m 1 + n 1 = 5 is satisfied.
If R 1, R 2, X and L 1 there are a plurality, the plurality of R 1, R 2, X and L 1 may be different from one another respectively the same.
[2]
The actinic or radiation-sensitive resin composition according to [1], wherein L 2 in the general formula (1) represents a single bond.
[3]
R 1 in the above general formula (1) is a group having a cyclic structure containing a carbonic acid ester group, or a cyclic containing SO 2 groups in which two bonds of a sulfur atom are both bonded to a carbon atom or a nitrogen atom. The sensitive light-sensitive or radiation-sensitive resin composition according to [1] or [2], which represents a group having a structure.
[4]
The actinic light-sensitive or radiation-sensitive resin composition according to any one of [1] to [3], wherein the repeating unit (1a) is represented by the following general formula (2).
一般式(2)中、R1、R2、R3、L1、m1及びn1は、それぞれ上記一般式(1)におけるものと同じ意味を表す。
X’は-COO-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
R1、R2、X’及びL1が複数存在する場合、複数のR1、R2、X’及びL1は、それぞれ同じであっても異なっていてもよい。
[5]
上記樹脂(A)が、更に、ラクトン構造、カルボキシル基、水酸基及びスルホンアミド基からなる群より選ばれる少なくとも1つを有する繰り返し単位(1c)を含む、[4]に記載の感活性光線性又は感放射線性樹脂組成物。
[6]
上記一般式(2)中のX’が-COO-を表す、[4]又は[5]に記載の感活性光線性又は感放射線性樹脂組成物。
[7]
上記一般式(2)中のR1が下記一般式(4-1)又は(4-2)で表される、[4]~[6]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。 In the general formula (2), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1).
X 'is -COO -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
'If and L 1 there are a plurality, the plurality of R 1, R 2, X' R 1, R 2, X and L 1 may be different from one another respectively the same.
[5]
The active photosensitivity or photosensitivity according to [4], wherein the resin (A) further contains a repeating unit (1c) having at least one selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group. Radiation sensitive resin composition.
[6]
The actinic or radiation-sensitive resin composition according to [4] or [5], wherein X'in the general formula (2) represents -COO-.
[7]
The actinic cheilitis according to any one of [4] to [6], wherein R 1 in the general formula (2) is represented by the following general formula (4-1) or (4-2). Radiation-sensitive resin composition.
X’は-COO-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
R1、R2、X’及びL1が複数存在する場合、複数のR1、R2、X’及びL1は、それぞれ同じであっても異なっていてもよい。
[5]
上記樹脂(A)が、更に、ラクトン構造、カルボキシル基、水酸基及びスルホンアミド基からなる群より選ばれる少なくとも1つを有する繰り返し単位(1c)を含む、[4]に記載の感活性光線性又は感放射線性樹脂組成物。
[6]
上記一般式(2)中のX’が-COO-を表す、[4]又は[5]に記載の感活性光線性又は感放射線性樹脂組成物。
[7]
上記一般式(2)中のR1が下記一般式(4-1)又は(4-2)で表される、[4]~[6]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。 In the general formula (2), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1).
X 'is -COO -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
'If and L 1 there are a plurality, the plurality of R 1, R 2, X' R 1, R 2, X and L 1 may be different from one another respectively the same.
[5]
The active photosensitivity or photosensitivity according to [4], wherein the resin (A) further contains a repeating unit (1c) having at least one selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group. Radiation sensitive resin composition.
[6]
The actinic or radiation-sensitive resin composition according to [4] or [5], wherein X'in the general formula (2) represents -COO-.
[7]
The actinic cheilitis according to any one of [4] to [6], wherein R 1 in the general formula (2) is represented by the following general formula (4-1) or (4-2). Radiation-sensitive resin composition.
一般式(4-1)中、
R411、R412、R413、R414及びR415は、それぞれ独立に水素原子又はアルキル基を表す。
p41及びp42は、それぞれ独立に0~2の整数を表す。ただし、p41+p42≦2を満たす。R411、R412、R414及びR415が複数存在する場合、複数のR411、R412、R414及びR415は、それぞれ同じであっても異なっていてもよい。
一般式(4-2)中、
R421、R422、R423、R424及びR425は、それぞれ独立に水素原子又はアルキル基を表す。
p43及びp44は、それぞれ独立に0~2の整数を表す。ただし、p43+p44≦2を満たす。R421、R422、R424及びR425が複数存在する場合、複数のR421、R422、R424及びR425は、それぞれ同じであっても異なっていてもよい。
一般式(4-1)及び(4-2)中、*は結合位置を表す。
[8]
上記一般式(2)中のR1が上記一般式(4-1)で表される、[7]に記載の感活性光線性又は感放射線性樹脂組成物。
[9]
上記繰り返し単位(1a)が下記一般式(5)で表され、かつ上記樹脂(A)が、更に、ラクトン構造、カルボキシル基、水酸基及びスルホンアミド基からなる群より選ばれる少なくとも1つを有する繰り返し単位(1c)を含む、[1]~[3]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。 In general formula (4-1),
R 411 , R 412 , R 413 , R 414 and R 415 each independently represent a hydrogen atom or an alkyl group.
p 41 and p 42 each independently represent an integer of 0 to 2. However, p 41 + p 42 ≤ 2 is satisfied. If R 411, R 412, R 414 and R 415 there are a plurality, a plurality of R 411, R 412, R 414 and R 415 may be different from one another respectively the same.
In general formula (4-2),
R 421 , R 422 , R 423 , R 424 and R 425 each independently represent a hydrogen atom or an alkyl group.
p 43 and p 44 each independently represent an integer of 0 to 2. However, p 43 + p 44 ≤ 2 is satisfied. If R 421, R 422, R 424 and R 425 there are a plurality, a plurality of R 421, R 422, R 424 and R 425 may be different from one another respectively the same.
In the general formulas (4-1) and (4-2), * represents the bonding position.
[8]
The actinic or radiation-sensitive resin composition according to [7], wherein R 1 in the general formula (2) is represented by the general formula (4-1).
[9]
The repeating unit (1a) is represented by the following general formula (5), and the resin (A) further has at least one selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group. The sensitive light-sensitive or radiation-sensitive resin composition according to any one of [1] to [3], which comprises the unit (1c).
R411、R412、R413、R414及びR415は、それぞれ独立に水素原子又はアルキル基を表す。
p41及びp42は、それぞれ独立に0~2の整数を表す。ただし、p41+p42≦2を満たす。R411、R412、R414及びR415が複数存在する場合、複数のR411、R412、R414及びR415は、それぞれ同じであっても異なっていてもよい。
一般式(4-2)中、
R421、R422、R423、R424及びR425は、それぞれ独立に水素原子又はアルキル基を表す。
p43及びp44は、それぞれ独立に0~2の整数を表す。ただし、p43+p44≦2を満たす。R421、R422、R424及びR425が複数存在する場合、複数のR421、R422、R424及びR425は、それぞれ同じであっても異なっていてもよい。
一般式(4-1)及び(4-2)中、*は結合位置を表す。
[8]
上記一般式(2)中のR1が上記一般式(4-1)で表される、[7]に記載の感活性光線性又は感放射線性樹脂組成物。
[9]
上記繰り返し単位(1a)が下記一般式(5)で表され、かつ上記樹脂(A)が、更に、ラクトン構造、カルボキシル基、水酸基及びスルホンアミド基からなる群より選ばれる少なくとも1つを有する繰り返し単位(1c)を含む、[1]~[3]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。 In general formula (4-1),
R 411 , R 412 , R 413 , R 414 and R 415 each independently represent a hydrogen atom or an alkyl group.
p 41 and p 42 each independently represent an integer of 0 to 2. However, p 41 + p 42 ≤ 2 is satisfied. If R 411, R 412, R 414 and R 415 there are a plurality, a plurality of R 411, R 412, R 414 and R 415 may be different from one another respectively the same.
In general formula (4-2),
R 421 , R 422 , R 423 , R 424 and R 425 each independently represent a hydrogen atom or an alkyl group.
p 43 and p 44 each independently represent an integer of 0 to 2. However, p 43 + p 44 ≤ 2 is satisfied. If R 421, R 422, R 424 and R 425 there are a plurality, a plurality of R 421, R 422, R 424 and R 425 may be different from one another respectively the same.
In the general formulas (4-1) and (4-2), * represents the bonding position.
[8]
The actinic or radiation-sensitive resin composition according to [7], wherein R 1 in the general formula (2) is represented by the general formula (4-1).
[9]
The repeating unit (1a) is represented by the following general formula (5), and the resin (A) further has at least one selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group. The sensitive light-sensitive or radiation-sensitive resin composition according to any one of [1] to [3], which comprises the unit (1c).
一般式(5)中、R1、R2、R3、L1、m1及びn1は、それぞれ上記一般式(1)におけるものと同じ意味を表す。
R1、R2及びL1が複数存在する場合、複数のR1、R2及びL1は、それぞれ同じであっても異なっていてもよい。
[10]
上記一般式(5)中のR1が下記一般式(6-1)又は(6-2)で表される、[9]に記載の感活性光線性又は感放射線性樹脂組成物。 In the general formula (5), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1).
If R 1, R 2 and L 1 there are a plurality, the plurality of R 1, R 2 and L 1 may be different from one another respectively the same.
[10]
The actinic or radiation-sensitive resin composition according to [9], wherein R 1 in the general formula (5) is represented by the following general formula (6-1) or (6-2).
R1、R2及びL1が複数存在する場合、複数のR1、R2及びL1は、それぞれ同じであっても異なっていてもよい。
[10]
上記一般式(5)中のR1が下記一般式(6-1)又は(6-2)で表される、[9]に記載の感活性光線性又は感放射線性樹脂組成物。 In the general formula (5), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1).
If R 1, R 2 and L 1 there are a plurality, the plurality of R 1, R 2 and L 1 may be different from one another respectively the same.
[10]
The actinic or radiation-sensitive resin composition according to [9], wherein R 1 in the general formula (5) is represented by the following general formula (6-1) or (6-2).
一般式(6-1)中、
R611、R612、R613、R614及びR615は、それぞれ独立に水素原子又はアルキル基を表す。
p61及びp62は、それぞれ独立に0~2の整数を表す。ただし、p61+p62≦2を満たす。R611、R612、R614及びR615が複数存在する場合、複数のR611、R612、R614及びR615は、それぞれ同じであっても異なっていてもよい。
一般式(6-2)中、
R621、R622、R623、R624及びR625は、それぞれ独立に水素原子又はアルキル基を表す。
p63及びp64は、それぞれ独立に0~2の整数を表す。ただし、p63+p64≦2を満たす。R621、R622、R624及びR625が複数存在する場合、複数のR621、R622、R624及びR625は、それぞれ同じであっても異なっていてもよい。
一般式(6-1)及び(6-2)中、*は結合位置を表す。
[11]
上記一般式(5)中のR1が上記一般式(6-1)で表される、[10]に記載の感活性光線性又は感放射線性樹脂組成物。
[12]
上記繰り返し単位(1a)の含有量が上記樹脂(A)の全繰り返し単位に対して10~60質量%である、[1]~[11]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
[13]
上記化合物(B)がアニオンとカチオンとを含むイオン性化合物である、[1]~[12]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
[14]
上記化合物(B)が1つ以上のアニオン性分子と1つ以上のカチオン性分子とで構成され、上記カチオン性分子のうち少なくとも1つがフッ素原子を含む、[1]~[13]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
[15]
上記化合物(B)が下記一般式(a)~(c)のいずれかで表される、[1]~[13]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
Ma1 +Aa --La-Ba -Ma2 + (a)
(Mb1 +Ab -)nb-Lb-Bb -Mb2 + (b)
(Mc +Ac -)nc-Lc (c)
一般式(a)中、Ma1 +及びMa2 +は、それぞれ独立に有機カチオンを表し、Laは2価の有機基を表し、Aa -及びBa -は、それぞれ独立にアニオン性官能基を表す。
ただし、一般式(a)で表される化合物のMa1 +及びMa2 +がそれぞれ水素原子で置換されたHAa-La-BaHで表される化合物において、HAaで表される基のpKaはBaHで表される基のpKaよりも小さい。
一般式(b)中、Mb1 +及びMb2 +は、それぞれ独立に有機カチオンを表し、Lbは(nb+1)価の有機基を表し、Ab -及びBb -は、それぞれ独立にアニオン性官能基を表し、nbは2以上の整数を表す。複数のMb1 +及びAb -は、それぞれ同じであっても異なっていてもよい。
ただし、一般式(b)で表される化合物のMb1 +及びMb2 +がそれぞれ水素原子で置換された(HAb)nb-Lb-BbHで表される化合物において、HAbで表される基のpKaはBbHで表される基のpKaよりも小さい。
一般式(c)中、Mc +は有機カチオンを表し、Ac -はアニオン性官能基を表し、Lcは酸を中和可能な非イオン性の有機部位を表し、ncは2以上の整数を表す。複数のMc +及びAc -は、それぞれ同じであっても異なっていてもよい。
[16]
[1]~[15]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物により形成された感活性光線性又は感放射線性膜。
[17]
[16]に記載の感活性光線性又は感放射線性膜を備えたマスクブランクス。
[18]
[1]~[15]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物を用いて基板上にレジスト膜を形成する工程と、
上記レジスト膜を露光する工程と、
現像液を用いて上記露光されたレジスト膜を現像し、パターンを形成する工程と、
を含むパターン形成方法。
[19]
[18]に記載のパターン形成方法を含む電子デバイスの製造方法。 In general formula (6-1),
R 611 , R 612 , R 613 , R 614 and R 615 each independently represent a hydrogen atom or an alkyl group.
p 61 and p 62 each independently represent an integer of 0 to 2. However, p 61 + p 62 ≤ 2 is satisfied. If R 611, R 612, R 614 and R 615 there are a plurality, a plurality of R 611, R 612, R 614 and R 615 may be different from one another respectively the same.
In general formula (6-2),
R 621 , R 622 , R 623 , R 624 and R 625 each independently represent a hydrogen atom or an alkyl group.
p 63 and p 64 each independently represent an integer of 0 to 2. However, p 63 + p 64 ≤ 2 is satisfied. If R 621, R 622, R 624 and R 625 there are a plurality, a plurality of R 621, R 622, R 624 and R 625 may be different from one another respectively the same.
In the general formulas (6-1) and (6-2), * represents the bonding position.
[11]
The actinic or radiation-sensitive resin composition according to [10], wherein R 1 in the general formula (5) is represented by the general formula (6-1).
[12]
The actinic cheilitis according to any one of [1] to [11], wherein the content of the repeating unit (1a) is 10 to 60% by mass with respect to all the repeating units of the resin (A). Radiation-sensitive resin composition.
[13]
The actinic or radiation-sensitive resin composition according to any one of [1] to [12], wherein the compound (B) is an ionic compound containing an anion and a cation.
[14]
Any of [1] to [13], wherein the compound (B) is composed of one or more anionic molecules and one or more cationic molecules, and at least one of the cationic molecules contains a fluorine atom. The sensitive light-sensitive or radiation-sensitive resin composition according to item 1.
[15]
The actinic light-sensitive or radiation-sensitive resin composition according to any one of [1] to [13], wherein the compound (B) is represented by any of the following general formulas (a) to (c). ..
M a1 + A a - -L a -B a - M a2 + (a)
(M b1 + A b -) nb -L b -B b - M b2 + (b)
(M c + A c -) nc -L c (c)
In the general formula (a), M a1 + and M a2 + each independently represent an organic cation, L a represents a divalent organic group, A a - and B a - are each independently an anionic functional Represents a group.
However, in the general formula (a) HA a -L a -B represented by a H compound M a1 + and M a2 + is substituted with a hydrogen atom each of the compounds represented by the represented by HA a pKa groups is less than the pKa of the groups represented by B a H.
In the general formula (b), M b1 + and M b2 + each independently represent an organic cation, L b represents a (nb + 1) -valent organic group, and Ab − and B b − each independently represent an anion. It represents a sex functional group, and nb represents an integer of 2 or more. The plurality of M b1 + and Ab − may be the same or different from each other.
However, in the general formula (b) M b1 + and M b2 + of the compound represented by is substituted with hydrogen atoms, respectively (HA b) a compound represented by nb -L b -B b H, in HA b The pKa of the group represented is smaller than the pKa of the group represented by B b H.
In the general formula (c), Mc + represents an organic cation, Ac − represents an anionic functional group, L c represents a nonionic organic moiety capable of neutralizing an acid, and nc represents 2 or more. Represents an integer. The plurality of Mc + and Ac − may be the same or different from each other.
[16]
A sensitive light-sensitive or radiation-sensitive film formed by the sensitive light-sensitive or radiation-sensitive resin composition according to any one of [1] to [15].
[17]
[16] A mask blank having the sensitive light-sensitive or radiation-sensitive film according to [16].
[18]
A step of forming a resist film on a substrate using the actinic cheilitis or radiation-sensitive resin composition according to any one of [1] to [15].
The process of exposing the resist film and
The step of developing the exposed resist film with a developing solution to form a pattern, and
Pattern forming method including.
[19]
A method for manufacturing an electronic device, which comprises the pattern forming method according to [18].
R611、R612、R613、R614及びR615は、それぞれ独立に水素原子又はアルキル基を表す。
p61及びp62は、それぞれ独立に0~2の整数を表す。ただし、p61+p62≦2を満たす。R611、R612、R614及びR615が複数存在する場合、複数のR611、R612、R614及びR615は、それぞれ同じであっても異なっていてもよい。
一般式(6-2)中、
R621、R622、R623、R624及びR625は、それぞれ独立に水素原子又はアルキル基を表す。
p63及びp64は、それぞれ独立に0~2の整数を表す。ただし、p63+p64≦2を満たす。R621、R622、R624及びR625が複数存在する場合、複数のR621、R622、R624及びR625は、それぞれ同じであっても異なっていてもよい。
一般式(6-1)及び(6-2)中、*は結合位置を表す。
[11]
上記一般式(5)中のR1が上記一般式(6-1)で表される、[10]に記載の感活性光線性又は感放射線性樹脂組成物。
[12]
上記繰り返し単位(1a)の含有量が上記樹脂(A)の全繰り返し単位に対して10~60質量%である、[1]~[11]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
[13]
上記化合物(B)がアニオンとカチオンとを含むイオン性化合物である、[1]~[12]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
[14]
上記化合物(B)が1つ以上のアニオン性分子と1つ以上のカチオン性分子とで構成され、上記カチオン性分子のうち少なくとも1つがフッ素原子を含む、[1]~[13]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
[15]
上記化合物(B)が下記一般式(a)~(c)のいずれかで表される、[1]~[13]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
Ma1 +Aa --La-Ba -Ma2 + (a)
(Mb1 +Ab -)nb-Lb-Bb -Mb2 + (b)
(Mc +Ac -)nc-Lc (c)
一般式(a)中、Ma1 +及びMa2 +は、それぞれ独立に有機カチオンを表し、Laは2価の有機基を表し、Aa -及びBa -は、それぞれ独立にアニオン性官能基を表す。
ただし、一般式(a)で表される化合物のMa1 +及びMa2 +がそれぞれ水素原子で置換されたHAa-La-BaHで表される化合物において、HAaで表される基のpKaはBaHで表される基のpKaよりも小さい。
一般式(b)中、Mb1 +及びMb2 +は、それぞれ独立に有機カチオンを表し、Lbは(nb+1)価の有機基を表し、Ab -及びBb -は、それぞれ独立にアニオン性官能基を表し、nbは2以上の整数を表す。複数のMb1 +及びAb -は、それぞれ同じであっても異なっていてもよい。
ただし、一般式(b)で表される化合物のMb1 +及びMb2 +がそれぞれ水素原子で置換された(HAb)nb-Lb-BbHで表される化合物において、HAbで表される基のpKaはBbHで表される基のpKaよりも小さい。
一般式(c)中、Mc +は有機カチオンを表し、Ac -はアニオン性官能基を表し、Lcは酸を中和可能な非イオン性の有機部位を表し、ncは2以上の整数を表す。複数のMc +及びAc -は、それぞれ同じであっても異なっていてもよい。
[16]
[1]~[15]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物により形成された感活性光線性又は感放射線性膜。
[17]
[16]に記載の感活性光線性又は感放射線性膜を備えたマスクブランクス。
[18]
[1]~[15]のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物を用いて基板上にレジスト膜を形成する工程と、
上記レジスト膜を露光する工程と、
現像液を用いて上記露光されたレジスト膜を現像し、パターンを形成する工程と、
を含むパターン形成方法。
[19]
[18]に記載のパターン形成方法を含む電子デバイスの製造方法。 In general formula (6-1),
R 611 , R 612 , R 613 , R 614 and R 615 each independently represent a hydrogen atom or an alkyl group.
p 61 and p 62 each independently represent an integer of 0 to 2. However, p 61 + p 62 ≤ 2 is satisfied. If R 611, R 612, R 614 and R 615 there are a plurality, a plurality of R 611, R 612, R 614 and R 615 may be different from one another respectively the same.
In general formula (6-2),
R 621 , R 622 , R 623 , R 624 and R 625 each independently represent a hydrogen atom or an alkyl group.
p 63 and p 64 each independently represent an integer of 0 to 2. However, p 63 + p 64 ≤ 2 is satisfied. If R 621, R 622, R 624 and R 625 there are a plurality, a plurality of R 621, R 622, R 624 and R 625 may be different from one another respectively the same.
In the general formulas (6-1) and (6-2), * represents the bonding position.
[11]
The actinic or radiation-sensitive resin composition according to [10], wherein R 1 in the general formula (5) is represented by the general formula (6-1).
[12]
The actinic cheilitis according to any one of [1] to [11], wherein the content of the repeating unit (1a) is 10 to 60% by mass with respect to all the repeating units of the resin (A). Radiation-sensitive resin composition.
[13]
The actinic or radiation-sensitive resin composition according to any one of [1] to [12], wherein the compound (B) is an ionic compound containing an anion and a cation.
[14]
Any of [1] to [13], wherein the compound (B) is composed of one or more anionic molecules and one or more cationic molecules, and at least one of the cationic molecules contains a fluorine atom. The sensitive light-sensitive or radiation-sensitive resin composition according to item 1.
[15]
The actinic light-sensitive or radiation-sensitive resin composition according to any one of [1] to [13], wherein the compound (B) is represented by any of the following general formulas (a) to (c). ..
M a1 + A a - -L a -B a - M a2 + (a)
(M b1 + A b -) nb -L b -B b - M b2 + (b)
(M c + A c -) nc -L c (c)
In the general formula (a), M a1 + and M a2 + each independently represent an organic cation, L a represents a divalent organic group, A a - and B a - are each independently an anionic functional Represents a group.
However, in the general formula (a) HA a -L a -B represented by a H compound M a1 + and M a2 + is substituted with a hydrogen atom each of the compounds represented by the represented by HA a pKa groups is less than the pKa of the groups represented by B a H.
In the general formula (b), M b1 + and M b2 + each independently represent an organic cation, L b represents a (nb + 1) -valent organic group, and Ab − and B b − each independently represent an anion. It represents a sex functional group, and nb represents an integer of 2 or more. The plurality of M b1 + and Ab − may be the same or different from each other.
However, in the general formula (b) M b1 + and M b2 + of the compound represented by is substituted with hydrogen atoms, respectively (HA b) a compound represented by nb -L b -B b H, in HA b The pKa of the group represented is smaller than the pKa of the group represented by B b H.
In the general formula (c), Mc + represents an organic cation, Ac − represents an anionic functional group, L c represents a nonionic organic moiety capable of neutralizing an acid, and nc represents 2 or more. Represents an integer. The plurality of Mc + and Ac − may be the same or different from each other.
[16]
A sensitive light-sensitive or radiation-sensitive film formed by the sensitive light-sensitive or radiation-sensitive resin composition according to any one of [1] to [15].
[17]
[16] A mask blank having the sensitive light-sensitive or radiation-sensitive film according to [16].
[18]
A step of forming a resist film on a substrate using the actinic cheilitis or radiation-sensitive resin composition according to any one of [1] to [15].
The process of exposing the resist film and
The step of developing the exposed resist film with a developing solution to form a pattern, and
Pattern forming method including.
[19]
A method for manufacturing an electronic device, which comprises the pattern forming method according to [18].
本発明によれば、超微細パターン(例えば、ピッチ50nm以下のパターン)において、パターン倒れが抑制でき、かつラフネス性能に優れるパターンを形成できる感活性光線性又は感放射線性樹脂組成物、上記感活性光線性又は感放射線性樹脂組成物により形成された感活性光線性又は感放射線性樹脂膜、上記感活性光線性又は感放射線性樹脂膜を備えたマスクブランクス、上記感活性光線性又は感放射線性樹脂組成物を用いるパターン形成方法及び電子デバイスの製造方法を提供することができる。
According to the present invention, in an ultrafine pattern (for example, a pattern having a pitch of 50 nm or less), a sensitive ray-sensitive or radiation-sensitive resin composition capable of suppressing pattern collapse and forming a pattern having excellent roughness performance, the above-mentioned sensitivity Sensitive ray-sensitive or radiation-sensitive resin film formed of a light-sensitive or radiation-sensitive resin composition, mask blanks provided with the above-mentioned sensitive light-sensitive or radiation-sensitive resin film, the above-mentioned sensitive light-sensitive or radiation-sensitive resin film. A pattern forming method using a resin composition and a method for producing an electronic device can be provided.
以下に、本発明を実施するための形態の一例を説明する。
なお、本明細書において「~」を用いて表される数値範囲は、「~」の前後に記載される数値を下限値及び上限値として含む範囲を意味する。 Hereinafter, an example of a mode for carrying out the present invention will be described.
The numerical range represented by using "-" in the present specification means a range including the numerical values before and after "-" as the lower limit value and the upper limit value.
なお、本明細書において「~」を用いて表される数値範囲は、「~」の前後に記載される数値を下限値及び上限値として含む範囲を意味する。 Hereinafter, an example of a mode for carrying out the present invention will be described.
The numerical range represented by using "-" in the present specification means a range including the numerical values before and after "-" as the lower limit value and the upper limit value.
本明細書において、ハロゲン原子としては、例えば、フッ素原子、塩素原子、臭素原子、及び、ヨウ素原子が挙げられる。
In the present specification, examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
本明細書において表記される2価の基の結合方向は、特に断らない限り制限されない。例えば、「X-Y-Z」なる一般式で表される化合物中の、Yが-COO-である場合、Yは、-CO-O-であってもよく、-O-CO-であってもよい。また、上記化合物は「X-CO-O-Z」であってもよく「X-O-CO-Z」であってもよい。
The bonding direction of the divalent group described in the present specification is not limited unless otherwise specified. For example, when Y is -COO- in the compound represented by the general formula "XYZ", Y may be -CO-O-, and is -O-CO-. You may. Moreover, the said compound may be "X-CO-O-Z" or "X-O-CO-Z".
本明細書における、「(メタ)アクリル」とは、アクリル及びメタクリルを含む総称であり、「アクリル及びメタクリルの少なくとも1種」を意味する。同様に「(メタ)アクリル酸」とは、「アクリル酸及びメタクリル酸の少なくとも1種」を意味する。
In the present specification, "(meth) acrylic" is a general term including acrylic and methacryl, and means "at least one of acrylic and methacrylic". Similarly, "(meth) acrylic acid" means "at least one of acrylic acid and methacrylic acid".
本明細書中における「活性光線」又は「放射線」とは、例えば、水銀灯の輝線スペクトル、エキシマレーザーに代表される遠紫外線、極紫外線(EUV:Extreme Ultraviolet)、X線、及び電子線(EB:Electron Beam)等を意味する。本明細書中における「光」とは、活性光線又は放射線を意味する。
本明細書中における「露光」とは、特に断らない限り、水銀灯の輝線スペクトル、エキシマレーザーに代表される遠紫外線、極紫外線、X線、及びEUV等による露光のみならず、電子線、及びイオンビーム等の粒子線による描画も含む。 As used herein, the term "active light" or "radiation" refers to, for example, the emission line spectrum of a mercury lamp, far ultraviolet rays typified by an excimer laser, extreme ultraviolet rays (EUV: Extreme Ultraviolet), X-rays, and electron beams (EB:). It means Electron Beam) and the like. As used herein, the term "light" means active light or radiation.
Unless otherwise specified, the term "exposure" as used herein refers to not only exposure to the emission line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays, X-rays, EUV, etc., but also electron beams and ions. It also includes drawing with particle beams such as beams.
本明細書中における「露光」とは、特に断らない限り、水銀灯の輝線スペクトル、エキシマレーザーに代表される遠紫外線、極紫外線、X線、及びEUV等による露光のみならず、電子線、及びイオンビーム等の粒子線による描画も含む。 As used herein, the term "active light" or "radiation" refers to, for example, the emission line spectrum of a mercury lamp, far ultraviolet rays typified by an excimer laser, extreme ultraviolet rays (EUV: Extreme Ultraviolet), X-rays, and electron beams (EB:). It means Electron Beam) and the like. As used herein, the term "light" means active light or radiation.
Unless otherwise specified, the term "exposure" as used herein refers to not only exposure to the emission line spectrum of a mercury lamp, far ultraviolet rays typified by excimer lasers, extreme ultraviolet rays, X-rays, EUV, etc., but also electron beams and ions. It also includes drawing with particle beams such as beams.
本明細書において、樹脂の重量平均分子量(Mw)、数平均分子量(Mn)、及び分散度(分子量分布ともいう)(Mw/Mn)は、GPC(Gel Permeation Chromatography)装置(東ソー株式会社製HLC-8120GPC)によるGPC測定(溶媒:テトラヒドロフラン、流量(サンプル注入量):10μL、カラム:東ソー株式会社製TSK gel Multipore HXL-M、カラム温度:40℃、流速:1.0mL/分、検出器:示差屈折率検出器(Refractive Index Detector))によるポリスチレン換算値として定義される。
In the present specification, the weight average molecular weight (Mw), number average molecular weight (Mn), and dispersity (also referred to as molecular weight distribution) (Mw / Mn) of the resin are GPC (Gel Permeation Chromatography) apparatus (HLC manufactured by Toso Co., Ltd.). GPC measurement by (-8120 GPC) (solvent: tetrahydrofuran, flow rate (sample injection amount): 10 μL, column: TSK gel Multipore HXL-M manufactured by Toso Co., Ltd., column temperature: 40 ° C., flow velocity: 1.0 mL / min, detector: It is defined as a polystyrene-equivalent value by a differential refractometer (Refractive Index Detector).
1Åは1×10-10mである。
1 Å is 1 x 10-10 m.
本明細書において酸解離定数(pKa)とは、水溶液中でのpKaを表し、具体的には、下記ソフトウェアパッケージ1を用いて、ハメットの置換基定数及び公知文献値のデータベースに基づいた値を、計算により求められる値である。本明細書中に記載したpKaの値は、後述する場合を除き、全てソフトウェアパッケージ1を用いて計算により求めた値を示す。
In the present specification, the acid dissociation constant (pKa) represents pKa in an aqueous solution, and specifically, using the following software package 1, the value based on the Hammett substituent constant and the database of publicly known literature values is used. , It is a value obtained by calculation. The values of pKa described in the present specification are all values obtained by calculation using software package 1 except for the cases described later.
ソフトウェアパッケージ1:Advanced Chemistry Development (ACD/Labs) Software V8.14 for Solaris(1994-2007 ACD/Labs)。
Software Package 1: Advanced Chemistry Development (ACD / Labs) Software V8.14 for Solaris (1994-2007 ACD / Labs).
一方で、pKaは、分子軌道計算法によっても求められる。この具体的な方法としては、熱力学サイクルに基づいて、溶媒中におけるH+解離自由エネルギーを計算して算出する手法が挙げられる。なお、本明細書において、上記溶媒としては、通常は水を使用し、水ではpKaを求められない場合にはDMSO(ジメチルスルホキシド)を使用する。
H+解離自由エネルギーの計算方法については、例えばDFT(密度汎関数法)により計算できるが、他にも様々な手法が文献等で報告されており、これに制限されるものではない。なお、DFTを実施できるソフトウェアは複数存在するが、例えば、Gaussian16が挙げられる。 On the other hand, pKa can also be obtained by the molecular orbital calculation method. As a specific method for this, there is a method of calculating H + dissociation free energy in a solvent based on a thermodynamic cycle. In the present specification, water is usually used as the solvent, and DMSO (dimethyl sulfoxide) is used when pKa cannot be obtained with water.
The calculation method of H + dissociation free energy can be calculated by, for example, DFT (density functional theory), but various other methods have been reported in the literature and are not limited thereto. There are a plurality of software capable of performing DFT, and examples thereof include Gaussian16.
H+解離自由エネルギーの計算方法については、例えばDFT(密度汎関数法)により計算できるが、他にも様々な手法が文献等で報告されており、これに制限されるものではない。なお、DFTを実施できるソフトウェアは複数存在するが、例えば、Gaussian16が挙げられる。 On the other hand, pKa can also be obtained by the molecular orbital calculation method. As a specific method for this, there is a method of calculating H + dissociation free energy in a solvent based on a thermodynamic cycle. In the present specification, water is usually used as the solvent, and DMSO (dimethyl sulfoxide) is used when pKa cannot be obtained with water.
The calculation method of H + dissociation free energy can be calculated by, for example, DFT (density functional theory), but various other methods have been reported in the literature and are not limited thereto. There are a plurality of software capable of performing DFT, and examples thereof include Gaussian16.
本明細書中のpKaとは、上述した通り、ソフトウェアパッケージ1を用いて、ハメットの置換基定数及び公知文献値のデータベースに基づいた値を計算により求められる値を指すが、この手法によりpKaが算出できない場合には、DFT(密度汎関数法)に基づいてGaussian16により得られる値を採用するものとする。
As described above, pKa in the present specification refers to a value obtained by calculating a value based on a database of Hammett's substituent constants and known literature values using software package 1, and pKa is calculated by this method. If it cannot be calculated, the value obtained by Gaussian 16 based on DFT (Density Functional Theory) shall be adopted.
本明細書中における基(原子団)の表記について、置換及び無置換を記していない表記は、置換基を有さない基と共に置換基を有する基をも包含する。例えば、「アルキル基」とは、置換基を有さないアルキル基(無置換アルキル基)のみならず、置換基を有するアルキル基(置換アルキル基)をも包含する。また、本明細書中における「有機基」とは、少なくとも1個の炭素原子を含む基をいう。
Regarding the notation of a group (atomic group) in the present specification, the notation that does not describe substitution or non-substitution includes a group having a substituent as well as a group having no substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). Further, the "organic group" in the present specification means a group containing at least one carbon atom.
また、本明細書において、「置換基を有していてもよい」というときの置換基の種類、置換基の位置、及び、置換基の数は特に限定されない。置換基の数は例えば、1つ、2つ、3つ、又はそれ以上であってもよい。置換基の例としては水素原子を除く1価の非金属原子団を挙げることができ、例えば、以下の置換基Tから選択することができる。
Further, in the present specification, the type of the substituent, the position of the substituent, and the number of the substituents when "may have a substituent" are not particularly limited. The number of substituents may be, for example, one, two, three, or more. Examples of the substituent include a monovalent non-metal atomic group excluding a hydrogen atom, and for example, the following substituent T can be selected.
(置換基T)
置換基Tとしては、フッ素原子、塩素原子、臭素原子及びヨウ素原子等のハロゲン原子;メトキシ基、エトキシ基及びtert-ブトキシ基等のアルコキシ基;フェノキシ基及びp-トリルオキシ基等のアリールオキシ基;メトキシカルボニル基、ブトキシカルボニル基及びフェノキシカルボニル基等のアルコキシカルボニル基;アセトキシ基、プロピオニルオキシ基及びベンゾイルオキシ基等のアシルオキシ基;アセチル基、ベンゾイル基、イソブチリル基、アクリロイル基、メタクリロイル基及びメトキサリル基等のアシル基;メチルスルファニル基及びtert-ブチルスルファニル基等のアルキルスルファニル基;フェニルスルファニル基及びp-トリルスルファニル基等のアリールスルファニル基;アルキル基;シクロアルキル基;アリール基;ヘテロアリール基;水酸基;カルボキシ基;ホルミル基;スルホ基;シアノ基;アルキルアミノカルボニル基;アリールアミノカルボニル基;スルホンアミド基;シリル基;アミノ基;モノアルキルアミノ基;ジアルキルアミノ基;アリールアミノ基、ニトロ基;ホルミル基;並びにこれらの組み合わせが挙げられる。 (Substituent T)
Examples of the substituent T include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom; alkoxy group such as methoxy group, ethoxy group and tert-butoxy group; aryloxy group such as phenoxy group and p-tolyloxy group; Alkoxycarbonyl groups such as methoxycarbonyl group, butoxycarbonyl group and phenoxycarbonyl group; acyloxy groups such as acetoxy group, propionyloxy group and benzoyloxy group; acetyl group, benzoyl group, isobutyryl group, acryloyl group, methacryloyl group and metoxalyl group and the like. Acrylic groups of: alkylsulfanyl groups such as methylsulfanyl group and tert-butylsulfanyl group; arylsulfanyl groups such as phenylsulfanyl group and p-tolylsulfanyl group; alkyl groups; cycloalkyl groups; aryl groups; heteroaryl groups; hydroxyl groups; Carboxy group; formyl group; sulfo group; cyano group; alkylaminocarbonyl group; arylaminocarbonyl group; sulfonamide group; silyl group; amino group; monoalkylamino group; dialkylamino group; arylamino group, nitro group; formyl group ; And combinations of these.
置換基Tとしては、フッ素原子、塩素原子、臭素原子及びヨウ素原子等のハロゲン原子;メトキシ基、エトキシ基及びtert-ブトキシ基等のアルコキシ基;フェノキシ基及びp-トリルオキシ基等のアリールオキシ基;メトキシカルボニル基、ブトキシカルボニル基及びフェノキシカルボニル基等のアルコキシカルボニル基;アセトキシ基、プロピオニルオキシ基及びベンゾイルオキシ基等のアシルオキシ基;アセチル基、ベンゾイル基、イソブチリル基、アクリロイル基、メタクリロイル基及びメトキサリル基等のアシル基;メチルスルファニル基及びtert-ブチルスルファニル基等のアルキルスルファニル基;フェニルスルファニル基及びp-トリルスルファニル基等のアリールスルファニル基;アルキル基;シクロアルキル基;アリール基;ヘテロアリール基;水酸基;カルボキシ基;ホルミル基;スルホ基;シアノ基;アルキルアミノカルボニル基;アリールアミノカルボニル基;スルホンアミド基;シリル基;アミノ基;モノアルキルアミノ基;ジアルキルアミノ基;アリールアミノ基、ニトロ基;ホルミル基;並びにこれらの組み合わせが挙げられる。 (Substituent T)
Examples of the substituent T include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom; alkoxy group such as methoxy group, ethoxy group and tert-butoxy group; aryloxy group such as phenoxy group and p-tolyloxy group; Alkoxycarbonyl groups such as methoxycarbonyl group, butoxycarbonyl group and phenoxycarbonyl group; acyloxy groups such as acetoxy group, propionyloxy group and benzoyloxy group; acetyl group, benzoyl group, isobutyryl group, acryloyl group, methacryloyl group and metoxalyl group and the like. Acrylic groups of: alkylsulfanyl groups such as methylsulfanyl group and tert-butylsulfanyl group; arylsulfanyl groups such as phenylsulfanyl group and p-tolylsulfanyl group; alkyl groups; cycloalkyl groups; aryl groups; heteroaryl groups; hydroxyl groups; Carboxy group; formyl group; sulfo group; cyano group; alkylaminocarbonyl group; arylaminocarbonyl group; sulfonamide group; silyl group; amino group; monoalkylamino group; dialkylamino group; arylamino group, nitro group; formyl group ; And combinations of these.
[感活性光線性又は感放射線性樹脂組成物]
本発明の感活性光線性又は感放射線性樹脂組成物(以下、「本発明の組成物」とも言う)について説明する。
本発明の組成物は、典型的にはレジスト組成物であり、ポジ型のレジスト組成物であっても、ネガ型のレジスト組成物であってもよい。また、アルカリ現像用のレジスト組成物であっても、有機溶剤現像用のレジスト組成物であってもよい。
本発明の組成物は化学増幅型のレジスト組成物であることが好ましい。 [Actinic cheilitis or radiation-sensitive resin composition]
The actinic or radiation-sensitive resin composition of the present invention (hereinafter, also referred to as “composition of the present invention”) will be described.
The composition of the present invention is typically a resist composition, which may be a positive resist composition or a negative resist composition. Further, it may be a resist composition for alkaline development or a resist composition for organic solvent development.
The composition of the present invention is preferably a chemically amplified resist composition.
本発明の感活性光線性又は感放射線性樹脂組成物(以下、「本発明の組成物」とも言う)について説明する。
本発明の組成物は、典型的にはレジスト組成物であり、ポジ型のレジスト組成物であっても、ネガ型のレジスト組成物であってもよい。また、アルカリ現像用のレジスト組成物であっても、有機溶剤現像用のレジスト組成物であってもよい。
本発明の組成物は化学増幅型のレジスト組成物であることが好ましい。 [Actinic cheilitis or radiation-sensitive resin composition]
The actinic or radiation-sensitive resin composition of the present invention (hereinafter, also referred to as “composition of the present invention”) will be described.
The composition of the present invention is typically a resist composition, which may be a positive resist composition or a negative resist composition. Further, it may be a resist composition for alkaline development or a resist composition for organic solvent development.
The composition of the present invention is preferably a chemically amplified resist composition.
本発明の組成物は、一般式(1)で表される繰り返し単位(1a)、及び酸分解性基を有する繰り返し単位(1b)を含む樹脂(A)と、活性光線又は放射線の照射により酸を発生する化合物(B)と含有する。
このような構成によれば、例えばピッチ50nm以下の超微細パターンにおいて、パターン倒れ(倒れ前線幅)を低減でき、更にラフネス性能に優れるパターンを形成できる。
ここで、「倒れ前線幅」とは、ライン部が倒れることなく形成(解像)できる線幅を意味する。
本発明が上記効果を発現できるメカニズムは必ずしも明らかではないが、本発明者らは以下のように考えている。 The composition of the present invention comprises a resin (A) containing a repeating unit (1a) represented by the general formula (1) and a repeating unit (1b) having an acid-degradable group, and an acid by irradiation with active light or radiation. Is contained with the compound (B) that generates the above.
According to such a configuration, for example, in an ultrafine pattern having a pitch of 50 nm or less, pattern collapse (falling front width) can be reduced, and a pattern having excellent roughness performance can be formed.
Here, the "falling front width" means a line width that can be formed (resolved) without the line portion falling.
The mechanism by which the present invention can exert the above effects is not always clear, but the present inventors consider it as follows.
このような構成によれば、例えばピッチ50nm以下の超微細パターンにおいて、パターン倒れ(倒れ前線幅)を低減でき、更にラフネス性能に優れるパターンを形成できる。
ここで、「倒れ前線幅」とは、ライン部が倒れることなく形成(解像)できる線幅を意味する。
本発明が上記効果を発現できるメカニズムは必ずしも明らかではないが、本発明者らは以下のように考えている。 The composition of the present invention comprises a resin (A) containing a repeating unit (1a) represented by the general formula (1) and a repeating unit (1b) having an acid-degradable group, and an acid by irradiation with active light or radiation. Is contained with the compound (B) that generates the above.
According to such a configuration, for example, in an ultrafine pattern having a pitch of 50 nm or less, pattern collapse (falling front width) can be reduced, and a pattern having excellent roughness performance can be formed.
Here, the "falling front width" means a line width that can be formed (resolved) without the line portion falling.
The mechanism by which the present invention can exert the above effects is not always clear, but the present inventors consider it as follows.
本発明の組成物は、一般式(1)で表される繰り返し単位(1a)を含む樹脂(A)を含有する。繰り返し単位(1a)はR1で表される、極性が適度に高い、炭酸エステル基を含む環状構造を有する基、又はSO2基を含む環状構造を有する基を有している。
一般的に、感活性光線性又は感放射線性樹脂組成物に含まれる活性光線又は放射線の照射により酸を発生する化合物(「光酸発生剤」とも言う)は、極性基を有していたり、イオン性化合物であったりするため、光酸発生剤同士で凝集しやすい傾向にある。
しかしながら、本発明では、樹脂(A)が有する高極性のR1が化合物(B)と相互作用することにより、化合物(B)の凝集を抑制できる。そのため、本発明の組成物により形成した感活性光線性又は感放射線性膜(典型的にはレジスト膜)では、光酸発生剤を均一に存在させることができ、ラフネス性能が向上したものと考えられる。
ここで、樹脂(A)が有するR1は、上述のように光酸発生剤の凝集を抑制できる程度の極性を有するものの、極性が高すぎないため、現像不良になりにくく、また、樹脂(A)中の非極性ユニット(例えば、酸分解性基を有する繰り返し単位(1b)における酸分解性基)との相溶性も維持できる。そのため、更にラフネス性能が向上したものと考えられる。
このように、ラフネス性能に優れることによって、得られるパターンにおける隣接するパターン間の距離がより均一になるため、隣接するパターン間にかかるキャピラリー力が均一化され、パターン倒れが抑制できるものと推察される。 The composition of the present invention contains a resin (A) containing a repeating unit (1a) represented by the general formula (1). Repeating unit (1a) is represented by R 1, polar moderately high, and has a group having a cyclic structure containing a carbonate group, or a group having a cyclic structure containing an SO 2 group.
In general, a compound (also referred to as a "photoacid generator") that generates an acid by irradiation with active light or radiation contained in a sensitive light-sensitive or radiation-sensitive resin composition has a polar group or has a polar group. Since it is an ionic compound, it tends to agglomerate between photoacid generators.
However, in the present invention, the highly polar R 1 of the resin (A) interacts with the compound (B) to suppress the aggregation of the compound (B). Therefore, in the sensitive light-sensitive or radiation-sensitive film (typically a resist film) formed by the composition of the present invention, it is considered that the photoacid generator can be uniformly present and the roughness performance is improved. Be done.
Here, the R 1 of the resin (A) has a polarity sufficient to suppress the aggregation of the photoacid generator as described above, but the polarity is not too high, so that development failure is unlikely to occur, and the resin (A) Compatibility with the non-polar unit in A) (for example, the acid-degradable group in the repeating unit (1b) having an acid-degradable group) can also be maintained. Therefore, it is considered that the roughness performance is further improved.
In this way, it is presumed that the excellent roughness performance makes the distance between adjacent patterns in the obtained pattern more uniform, so that the capillary force applied between the adjacent patterns is made uniform and pattern collapse can be suppressed. NS.
一般的に、感活性光線性又は感放射線性樹脂組成物に含まれる活性光線又は放射線の照射により酸を発生する化合物(「光酸発生剤」とも言う)は、極性基を有していたり、イオン性化合物であったりするため、光酸発生剤同士で凝集しやすい傾向にある。
しかしながら、本発明では、樹脂(A)が有する高極性のR1が化合物(B)と相互作用することにより、化合物(B)の凝集を抑制できる。そのため、本発明の組成物により形成した感活性光線性又は感放射線性膜(典型的にはレジスト膜)では、光酸発生剤を均一に存在させることができ、ラフネス性能が向上したものと考えられる。
ここで、樹脂(A)が有するR1は、上述のように光酸発生剤の凝集を抑制できる程度の極性を有するものの、極性が高すぎないため、現像不良になりにくく、また、樹脂(A)中の非極性ユニット(例えば、酸分解性基を有する繰り返し単位(1b)における酸分解性基)との相溶性も維持できる。そのため、更にラフネス性能が向上したものと考えられる。
このように、ラフネス性能に優れることによって、得られるパターンにおける隣接するパターン間の距離がより均一になるため、隣接するパターン間にかかるキャピラリー力が均一化され、パターン倒れが抑制できるものと推察される。 The composition of the present invention contains a resin (A) containing a repeating unit (1a) represented by the general formula (1). Repeating unit (1a) is represented by R 1, polar moderately high, and has a group having a cyclic structure containing a carbonate group, or a group having a cyclic structure containing an SO 2 group.
In general, a compound (also referred to as a "photoacid generator") that generates an acid by irradiation with active light or radiation contained in a sensitive light-sensitive or radiation-sensitive resin composition has a polar group or has a polar group. Since it is an ionic compound, it tends to agglomerate between photoacid generators.
However, in the present invention, the highly polar R 1 of the resin (A) interacts with the compound (B) to suppress the aggregation of the compound (B). Therefore, in the sensitive light-sensitive or radiation-sensitive film (typically a resist film) formed by the composition of the present invention, it is considered that the photoacid generator can be uniformly present and the roughness performance is improved. Be done.
Here, the R 1 of the resin (A) has a polarity sufficient to suppress the aggregation of the photoacid generator as described above, but the polarity is not too high, so that development failure is unlikely to occur, and the resin (A) Compatibility with the non-polar unit in A) (for example, the acid-degradable group in the repeating unit (1b) having an acid-degradable group) can also be maintained. Therefore, it is considered that the roughness performance is further improved.
In this way, it is presumed that the excellent roughness performance makes the distance between adjacent patterns in the obtained pattern more uniform, so that the capillary force applied between the adjacent patterns is made uniform and pattern collapse can be suppressed. NS.
さらに、樹脂(A)に含まれる繰り返し単位(1a)は、その構造中にベンゼン環を1つ有している。
ベンゼン環を有さない樹脂の場合、得られる感活性光線性又は感放射線性膜のガラス転移点(Tg)が低くなり、光酸発生剤から発生する酸が拡散しやすくなるため、ラフネス性能が悪化してしまう。また、得られるパターンの強度不足により、エッチング耐性が悪化する他、パターン倒れが起きやすくなると考えられる。
一方、ナフタレン環のような多環の芳香族環を有する樹脂の場合、疎水性が高いため、R1の極性の効果が得られにくく、光酸発生剤の凝集を引き起こしやすくなり、本発明のようなラフネス性能は得られないと考えられる。 Further, the repeating unit (1a) contained in the resin (A) has one benzene ring in its structure.
In the case of a resin having no benzene ring, the glass transition point (Tg) of the obtained sensitive light-sensitive or radiation-sensitive film is lowered, and the acid generated from the photoacid generator is easily diffused, so that the roughness performance is improved. It gets worse. Further, it is considered that the insufficient strength of the obtained pattern causes the etching resistance to deteriorate and the pattern to collapse easily.
On the other hand, in the case of a resin having a polycyclic aromatic ring such as a naphthalene ring, since the hydrophobicity is high, it is difficult to obtain the effect of the polarity of R 1 , and it is easy to cause aggregation of the photoacid generator. It is considered that such roughness performance cannot be obtained.
ベンゼン環を有さない樹脂の場合、得られる感活性光線性又は感放射線性膜のガラス転移点(Tg)が低くなり、光酸発生剤から発生する酸が拡散しやすくなるため、ラフネス性能が悪化してしまう。また、得られるパターンの強度不足により、エッチング耐性が悪化する他、パターン倒れが起きやすくなると考えられる。
一方、ナフタレン環のような多環の芳香族環を有する樹脂の場合、疎水性が高いため、R1の極性の効果が得られにくく、光酸発生剤の凝集を引き起こしやすくなり、本発明のようなラフネス性能は得られないと考えられる。 Further, the repeating unit (1a) contained in the resin (A) has one benzene ring in its structure.
In the case of a resin having no benzene ring, the glass transition point (Tg) of the obtained sensitive light-sensitive or radiation-sensitive film is lowered, and the acid generated from the photoacid generator is easily diffused, so that the roughness performance is improved. It gets worse. Further, it is considered that the insufficient strength of the obtained pattern causes the etching resistance to deteriorate and the pattern to collapse easily.
On the other hand, in the case of a resin having a polycyclic aromatic ring such as a naphthalene ring, since the hydrophobicity is high, it is difficult to obtain the effect of the polarity of R 1 , and it is easy to cause aggregation of the photoacid generator. It is considered that such roughness performance cannot be obtained.
以下、本発明の組成物が含み得る成分について詳述する。
Hereinafter, the components that can be contained in the composition of the present invention will be described in detail.
〔樹脂(A)〕
本発明の組成物は、下記一般式(1)で表される繰り返し単位(1a)及び酸分解性基を有する繰り返し単位(1b)を含む樹脂(A)を含有する。 [Resin (A)]
The composition of the present invention contains a resin (A) containing a repeating unit (1a) represented by the following general formula (1) and a repeating unit (1b) having an acid-degradable group.
本発明の組成物は、下記一般式(1)で表される繰り返し単位(1a)及び酸分解性基を有する繰り返し単位(1b)を含む樹脂(A)を含有する。 [Resin (A)]
The composition of the present invention contains a resin (A) containing a repeating unit (1a) represented by the following general formula (1) and a repeating unit (1b) having an acid-degradable group.
一般式(1)中、
R1は炭酸エステル基を含む環状構造を有する基、又はSO2基を含む環状構造を有する基を表す。ただし、上記SO2基中の硫黄原子の2つの結合手はいずれも酸素原子と結合することはない。
R2は水素原子、ハロゲン原子、水酸基又は有機基を表す。
R3は水素原子、ハロゲン原子又はアルキル基を表す。
L1は単結合又は2価の連結基を表す。
L2は単結合又は2価の連結基を表す。
Xは-COO-、-O-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
m1及びn1は各々1~4の整数を表す。ただし、m1+n1=5を満たす。
R1、R2、X及びL1が複数存在する場合、複数のR1、R2、X及びL1は、それぞれ同じであっても異なっていてもよい。 In general formula (1),
R 1 represents a group having a cyclic structure containing a carbonic acid ester group or a group having a cyclic structure containing SO 2 groups. However, neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom.
R 2 represents a hydrogen atom, a halogen atom, a hydroxyl group or an organic group.
R 3 represents a hydrogen atom, a halogen atom or an alkyl group.
L 1 represents a single bond or a divalent linking group.
L 2 represents a single bond or a divalent linking group.
X is -COO -, - O -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
m 1 and n 1 each represent an integer of 1 to 4. However, m 1 + n 1 = 5 is satisfied.
If R 1, R 2, X and L 1 there are a plurality, the plurality of R 1, R 2, X and L 1 may be different from one another respectively the same.
R1は炭酸エステル基を含む環状構造を有する基、又はSO2基を含む環状構造を有する基を表す。ただし、上記SO2基中の硫黄原子の2つの結合手はいずれも酸素原子と結合することはない。
R2は水素原子、ハロゲン原子、水酸基又は有機基を表す。
R3は水素原子、ハロゲン原子又はアルキル基を表す。
L1は単結合又は2価の連結基を表す。
L2は単結合又は2価の連結基を表す。
Xは-COO-、-O-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
m1及びn1は各々1~4の整数を表す。ただし、m1+n1=5を満たす。
R1、R2、X及びL1が複数存在する場合、複数のR1、R2、X及びL1は、それぞれ同じであっても異なっていてもよい。 In general formula (1),
R 1 represents a group having a cyclic structure containing a carbonic acid ester group or a group having a cyclic structure containing SO 2 groups. However, neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom.
R 2 represents a hydrogen atom, a halogen atom, a hydroxyl group or an organic group.
R 3 represents a hydrogen atom, a halogen atom or an alkyl group.
L 1 represents a single bond or a divalent linking group.
L 2 represents a single bond or a divalent linking group.
X is -COO -, - O -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
m 1 and n 1 each represent an integer of 1 to 4. However, m 1 + n 1 = 5 is satisfied.
If R 1, R 2, X and L 1 there are a plurality, the plurality of R 1, R 2, X and L 1 may be different from one another respectively the same.
一般式(1)中、R1は炭酸エステル基(下記式(G1)で表される基)を含む環状構造を有する基、又はSO2基(下記式(G2)で表される基)を含む環状構造を有する基を表す。
In the general formula (1), R 1 is a group having a cyclic structure containing a carbonic acid ester group (a group represented by the following formula (G1)) or two SO groups (a group represented by the following formula (G2)). Represents a group having a cyclic structure containing.
式(G1)及び式(G2)中、*1~*4は結合位置を表す。ただし、SO2基中の硫黄原子の2つの結合手はいずれも酸素原子と結合することはない。すなわち、式(G2)中の*3及び*4はいずれも酸素原子との結合位置を表す場合はない。
SO2基中の硫黄原子の2つの結合手はいずれも炭素原子又は窒素原子と結合していることが好ましい。すなわち、式(G2)中の*3及び*4はそれぞれ独立に炭素原子又は窒素原子との結合位置を表すことが好ましい。 In the formula (G1) and the formula (G2), * 1 to * 4 represent the coupling position. However, neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom. That is, neither * 3 nor * 4 in the formula (G2) represents the bond position with the oxygen atom.
It is preferable that both of the two bonds of the sulfur atom in the SO 2 group are bonded to the carbon atom or the nitrogen atom. That is, it is preferable that * 3 and * 4 in the formula (G2) independently represent the bond positions with the carbon atom or the nitrogen atom, respectively.
SO2基中の硫黄原子の2つの結合手はいずれも炭素原子又は窒素原子と結合していることが好ましい。すなわち、式(G2)中の*3及び*4はそれぞれ独立に炭素原子又は窒素原子との結合位置を表すことが好ましい。 In the formula (G1) and the formula (G2), * 1 to * 4 represent the coupling position. However, neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom. That is, neither * 3 nor * 4 in the formula (G2) represents the bond position with the oxygen atom.
It is preferable that both of the two bonds of the sulfur atom in the SO 2 group are bonded to the carbon atom or the nitrogen atom. That is, it is preferable that * 3 and * 4 in the formula (G2) independently represent the bond positions with the carbon atom or the nitrogen atom, respectively.
一般式(1)中のR1が、炭酸エステル基を含む環状構造を有する基、又は硫黄原子の2つの結合手がいずれも炭素原子又は窒素原子と結合しているSO2基を含む環状構造を有する基を表すことが好ましい。
R 1 in the general formula (1) is a group having a cyclic structure containing a carbonic acid ester group, or a cyclic structure containing SO 2 groups in which two bonds of a sulfur atom are both bonded to a carbon atom or a nitrogen atom. It is preferable to represent a group having.
R1の環状構造において環形成に寄与する原子の原子数(環員の原子数)は4~15が好ましく、4~10がより好ましく、4~8が更に好ましい。炭酸エステル基及びSO2基以外の環形成に寄与する原子の種類は特に限定されないが、炭素原子(カルボニル炭素であってもよい)、酸素原子、硫黄原子、窒素原子等が挙げられ、炭素原子であることが好ましい。
In the cyclic structure of R 1, the number of atoms (number of ring member atoms) that contribute to ring formation is preferably 4 to 15, more preferably 4 to 10, and even more preferably 4 to 8. Type of atoms contributing to ring formation than 2 group carbonic acid ester group and SO is not particularly limited, (it may be a carbonyl carbon) of carbon atoms, oxygen atom, sulfur atom, nitrogen atom and the like, carbon atoms Is preferable.
R1の環状構造は単環でも多環でもよいが、単環であることが好ましい。
The cyclic structure of R 1 may be monocyclic or polycyclic, but is preferably monocyclic.
R1の環状構造は炭酸エステル基又はSO2基と、炭化水素基とによって構成されることが好ましい。
R1の環状構造は単環又は多環のシクロアルキル基若しくはシクロアルケニル基における一部の炭化水素基が炭酸エステル基又はSO2基で置き換わった構造であることが好ましい。
ここで、シクロアルキル基又はシクロアルケニル基における一部の炭化水素基を炭酸エステル基又はSO2基で置き換えるとは、シクロアルキル基若しくはシクロアルケニル基における-(CH2)3-基を炭酸エステル基で置き換える、又は-(CH2)-基をSO2基で置き換えることを表す。 The cyclic structure of R 1 is preferably composed of a carbonic acid ester group or SO 2 group and a hydrocarbon group.
Ring structure of R 1 is preferably a structure in which a portion of the hydrocarbon group in the cycloalkyl or cycloalkenyl group or a monocyclic or polycyclic is replaced by carbonate group or a SO 2 group.
Here, the replacing part of the hydrocarbon group in the cycloalkyl group or cycloalkenyl group carbonate group or a SO 2 group, in the cycloalkyl or cycloalkenyl group - (CH 2) 3 - group and carbonate group It means to replace with, or to replace the-(CH 2 ) -group with 2 SO groups.
R1の環状構造は単環又は多環のシクロアルキル基若しくはシクロアルケニル基における一部の炭化水素基が炭酸エステル基又はSO2基で置き換わった構造であることが好ましい。
ここで、シクロアルキル基又はシクロアルケニル基における一部の炭化水素基を炭酸エステル基又はSO2基で置き換えるとは、シクロアルキル基若しくはシクロアルケニル基における-(CH2)3-基を炭酸エステル基で置き換える、又は-(CH2)-基をSO2基で置き換えることを表す。 The cyclic structure of R 1 is preferably composed of a carbonic acid ester group or SO 2 group and a hydrocarbon group.
Ring structure of R 1 is preferably a structure in which a portion of the hydrocarbon group in the cycloalkyl or cycloalkenyl group or a monocyclic or polycyclic is replaced by carbonate group or a SO 2 group.
Here, the replacing part of the hydrocarbon group in the cycloalkyl group or cycloalkenyl group carbonate group or a SO 2 group, in the cycloalkyl or cycloalkenyl group - (CH 2) 3 - group and carbonate group It means to replace with, or to replace the-(CH 2 ) -group with 2 SO groups.
R1の環状構造が、単環のシクロアルキル基における一部の炭化水素基が炭酸エステル基、又はSO2基で置き換わった構造である場合、上記シクロアルキル基としては、炭素数4~15のシクロアルキル基が挙げられ、炭素数4~10のシクロアルキル基が好ましく、炭素数4~8のシクロアルキル基がより好ましく、具体的にはシクロブチル基、シクロペンチル基、又はシクロヘキシル基が好ましい。
Cyclic structure R 1 is, part of the hydrocarbon group carbonate group in monocyclic cycloalkyl group, or a structure substituted with a SO 2 group, examples of the cycloalkyl group, having 4 to 15 carbon atoms Examples thereof include a cycloalkyl group, preferably a cycloalkyl group having 4 to 10 carbon atoms, more preferably a cycloalkyl group having 4 to 8 carbon atoms, and specifically, a cyclobutyl group, a cyclopentyl group, or a cyclohexyl group.
R1の環状構造が、多環のシクロアルキル基における一部の炭化水素基が炭酸エステル基、又はSO2基で置き換わった構造である場合、上記シクロアルキル基としては、炭素数4~15のシクロアルキル基が挙げられ、炭素数4~10のシクロアルキル基が好ましい。上記シクロアルキル基は5又は6員の環構造を有するものが好ましい。5又は6員環の環構造を有する多環シクロアルキル基としては、トリシクロデカニル基、ビシクロ[4,3,0]ノニル基等が挙げられる。
Cyclic structure R 1 is, in part in polycyclic cycloalkyl group hydrocarbon group carbonate group, or a structure substituted with a SO 2 group, examples of the cycloalkyl group, having 4 to 15 carbon atoms Cycloalkyl groups are mentioned, and cycloalkyl groups having 4 to 10 carbon atoms are preferable. The cycloalkyl group preferably has a 5- or 6-membered ring structure. Examples of the polycyclic cycloalkyl group having a 5- or 6-membered ring structure include a tricyclodecanyl group and a bicyclo [4,3,0] nonyl group.
R1の環状構造は更に置換基を有していてもよい。更なる置換基は特に限定されないが、例えば上記置換基Tが挙げられる。
The cyclic structure of R 1 may further have a substituent. The further substituent is not particularly limited, and examples thereof include the above-mentioned substituent T.
一般式(1)中、R2は水素原子、ハロゲン原子、水酸基又は有機基を表す。
In the general formula (1), R 2 represents a hydrogen atom, a halogen atom, a hydroxyl group or an organic group.
R2がハロゲン原子を表す場合のハロゲン原子としては、フッ素原子、塩素原子、臭素原子、又はヨウ素原子が挙げられ、フッ素原子であることが好ましい。
Examples of the halogen atom when R 2 represents a halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
R2が有機基を表す場合の有機基としては特に限定されないが、具体的にはアルキル基、シクロアルキル基等が挙げられる。
上記アルキル基は直鎖状でも分岐鎖状でもよく、炭素数1~20であることが好ましく、炭素数1~15であることがより好ましく、炭素数1~10であることが更に好ましく、メチル基が特に好ましい。
上記シクロアルキル基は単環でも多環でもよく、炭素数3~20であることが好ましく、炭素数5~15であることがより好ましい。 When R 2 represents an organic group, the organic group is not particularly limited, and specific examples thereof include an alkyl group and a cycloalkyl group.
The alkyl group may be linear or branched, preferably having 1 to 20 carbon atoms, more preferably 1 to 15 carbon atoms, further preferably 1 to 10 carbon atoms, and methyl. Groups are particularly preferred.
The cycloalkyl group may be monocyclic or polycyclic, and preferably has 3 to 20 carbon atoms, and more preferably 5 to 15 carbon atoms.
上記アルキル基は直鎖状でも分岐鎖状でもよく、炭素数1~20であることが好ましく、炭素数1~15であることがより好ましく、炭素数1~10であることが更に好ましく、メチル基が特に好ましい。
上記シクロアルキル基は単環でも多環でもよく、炭素数3~20であることが好ましく、炭素数5~15であることがより好ましい。 When R 2 represents an organic group, the organic group is not particularly limited, and specific examples thereof include an alkyl group and a cycloalkyl group.
The alkyl group may be linear or branched, preferably having 1 to 20 carbon atoms, more preferably 1 to 15 carbon atoms, further preferably 1 to 10 carbon atoms, and methyl. Groups are particularly preferred.
The cycloalkyl group may be monocyclic or polycyclic, and preferably has 3 to 20 carbon atoms, and more preferably 5 to 15 carbon atoms.
上記有機基は更に置換基を有していてもよい。更なる置換基は特に限定されないが、上記置換基Tが好ましく、ハロゲン原子がより好ましく、フッ素原子がさらに好ましい。
The organic group may further have a substituent. The further substituent is not particularly limited, but the above-mentioned Substituent T is preferable, a halogen atom is more preferable, and a fluorine atom is further preferable.
R2が有機基を表す場合の有機基としては、アルキル基であることが好ましく、フッ素置換若しくは無置換の炭素数1~3のアルキル基であることがより好ましく、メチル基又はトリフルオロメチル基がさらに好ましい。
When R 2 represents an organic group, the organic group is preferably an alkyl group, more preferably a fluorine-substituted or unsubstituted alkyl group having 1 to 3 carbon atoms, and a methyl group or a trifluoromethyl group. Is even more preferable.
R2は水素原子、フッ素原子、水酸基、メチル基又はトリフルオロメチル基であることが好ましく、水素原子であることがより好ましい。
R 2 is preferably a hydrogen atom, a fluorine atom, a hydroxyl group, a methyl group or a trifluoromethyl group, and more preferably a hydrogen atom.
一般式(1)中、R3は水素原子、ハロゲン原子又はアルキル基を表す。
In the general formula (1), R 3 represents a hydrogen atom, a halogen atom or an alkyl group.
R3がハロゲン原子を表す場合のハロゲン原子としては、フッ素原子、塩素原子、臭素原子、又はヨウ素原子が挙げられ、フッ素原子であることが好ましい。
Examples of the halogen atom when R 3 represents a halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
R3がアルキル基を表す場合のアルキル基としては、直鎖状又は分岐鎖状の炭素数1~12のアルキル基が挙げられ、メチル基又はエチル基が好ましく、メチル基がより好ましい。
上記アルキル基が置換基を有する場合の置換基としては、上記置換基Tが挙げられ、ハロゲン原子であることが好ましく、フッ素原子であることがより好ましい。 When R 3 represents an alkyl group, examples of the alkyl group include a linear or branched alkyl group having 1 to 12 carbon atoms, and a methyl group or an ethyl group is preferable, and a methyl group is more preferable.
When the alkyl group has a substituent, the substituent includes the above-mentioned Substituent T, which is preferably a halogen atom and more preferably a fluorine atom.
上記アルキル基が置換基を有する場合の置換基としては、上記置換基Tが挙げられ、ハロゲン原子であることが好ましく、フッ素原子であることがより好ましい。 When R 3 represents an alkyl group, examples of the alkyl group include a linear or branched alkyl group having 1 to 12 carbon atoms, and a methyl group or an ethyl group is preferable, and a methyl group is more preferable.
When the alkyl group has a substituent, the substituent includes the above-mentioned Substituent T, which is preferably a halogen atom and more preferably a fluorine atom.
R3は、水素原子、フッ素置換若しくは無置換の炭素数1~12のアルキル基、又はフッ素原子であることが好ましく、水素原子、メチル基、トリフルオロメチル基又はフッ素原子であることがより好ましく、水素原子又はメチル基であることが更に好ましい。
R 3 is preferably a hydrogen atom, a fluorine-substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, or a fluorine atom, and more preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a fluorine atom. , Hydrogen atom or methyl group is more preferable.
一般式(1)中、L1は単結合又は2価の連結基を表す。
In the general formula (1), L 1 represents a single bond or a divalent linking group.
L1が2価の連結基を表す場合の2価の連結基としては、アルキレン基、-O-、-C(=O)-、又はこれらを組み合わせてなる2価の基が挙げられる。
Examples of the divalent linking group when L 1 represents a divalent linking group include an alkylene group, -O-, -C (= O)-, or a divalent group formed by combining these.
L1がアルキレン基を表す場合のアルキレン基としては、炭素数1~18の鎖状若しくは分岐状のアルキレン基が挙げられ、具体的には、メチレン基、エチレン基、n-プロピレン基、i-プロピレン基、n-ブチレン基、n-ヘキシレン基、n-オクチレン基等が挙げられる。
アルキレン基は、炭素数1~3のアルキレン基であることが好ましく、メチレン基、又はエチレン基であることがより好ましく、メチレン基であることがさらに好ましい。
アルキレン基は、置換基を有していてもよく、アルキレン基が置換基を有する場合の置換基としては、上記置換基Tが挙げられる。 Examples of the alkylene group in which L 1 represents an alkylene group include a chain or branched alkylene group having 1 to 18 carbon atoms, and specifically, a methylene group, an ethylene group, an n-propylene group, and i-. Examples thereof include a propylene group, an n-butylene group, an n-hexylene group and an n-octylene group.
The alkylene group is preferably an alkylene group having 1 to 3 carbon atoms, more preferably a methylene group or an ethylene group, and even more preferably a methylene group.
The alkylene group may have a substituent, and examples of the substituent when the alkylene group has a substituent include the above-mentioned Substituent T.
アルキレン基は、炭素数1~3のアルキレン基であることが好ましく、メチレン基、又はエチレン基であることがより好ましく、メチレン基であることがさらに好ましい。
アルキレン基は、置換基を有していてもよく、アルキレン基が置換基を有する場合の置換基としては、上記置換基Tが挙げられる。 Examples of the alkylene group in which L 1 represents an alkylene group include a chain or branched alkylene group having 1 to 18 carbon atoms, and specifically, a methylene group, an ethylene group, an n-propylene group, and i-. Examples thereof include a propylene group, an n-butylene group, an n-hexylene group and an n-octylene group.
The alkylene group is preferably an alkylene group having 1 to 3 carbon atoms, more preferably a methylene group or an ethylene group, and even more preferably a methylene group.
The alkylene group may have a substituent, and examples of the substituent when the alkylene group has a substituent include the above-mentioned Substituent T.
L1は、単結合、メチレン基、エチレン基、-O-、-C(=O)-、又はこれらを組み合わせてなる2価の基が好ましい。
L 1 is preferably a single bond, a methylene group, an ethylene group, -O-, -C (= O)-, or a divalent group formed by combining these.
一般式(1)中、L2は単結合又は2価の連結基を表す。
In the general formula (1), L 2 represents a single bond or a divalent linking group.
L2が2価の連結基を表す場合の2価の連結基としては、アルキレン基、-O-、-C(=O)-、又はこれらを組み合わせてなる2価の基が挙げられる。
Examples of the divalent linking group when L 2 represents a divalent linking group include an alkylene group, —O—, —C (= O) −, or a divalent group formed by combining these groups.
L2がアルキレン基を表す場合のアルキレン基としては、上記L1として挙げたアルキレン基が挙げられ、好ましい例も同様である。
アルキレン基は、置換基を有していてもよく、アルキレン基が置換基を有する場合の置換基としては、上記置換基Tが挙げられる。 Examples of the alkylene group when L 2 represents an alkylene group include the alkylene group mentioned as L 1 , and the same applies to preferred examples.
The alkylene group may have a substituent, and examples of the substituent when the alkylene group has a substituent include the above-mentioned Substituent T.
アルキレン基は、置換基を有していてもよく、アルキレン基が置換基を有する場合の置換基としては、上記置換基Tが挙げられる。 Examples of the alkylene group when L 2 represents an alkylene group include the alkylene group mentioned as L 1 , and the same applies to preferred examples.
The alkylene group may have a substituent, and examples of the substituent when the alkylene group has a substituent include the above-mentioned Substituent T.
L2は、単結合又は-C(=O)O-であることが好ましく、単結合であることがより好ましい。L2が単結合であると、樹脂(A)の主鎖近傍の剛直性を維持することでTgの低下を防ぐことができるため好ましい。
L 2 is preferably a single bond or —C (= O) O—, and more preferably a single bond. When L 2 is a single bond, it is preferable because it is possible to prevent a decrease in Tg by maintaining the rigidity in the vicinity of the main chain of the resin (A).
一般式(1)中、Xは-COO-、-O-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
, - - -COO In the general formula (1), X is O -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 is hydrogen Represents an atom or an alkyl group.
R4がアルキル基を表す場合のアルキル基としては、直鎖状でも分岐鎖状でもよく、炭素数1~20であることが好ましく、炭素数1~10であることがより好ましい。
R4は水素原子であることが好ましい。 When R 4 represents an alkyl group, the alkyl group may be linear or branched, preferably having 1 to 20 carbon atoms, and more preferably 1 to 10 carbon atoms.
R 4 is preferably a hydrogen atom.
R4は水素原子であることが好ましい。 When R 4 represents an alkyl group, the alkyl group may be linear or branched, preferably having 1 to 20 carbon atoms, and more preferably 1 to 10 carbon atoms.
R 4 is preferably a hydrogen atom.
Xは-COO-、-O-又は-SO3-を表すことがより好ましく、-COO-又は-O-を表すことが特に好ましい。
X more preferably represents -COO-, -O- or -SO 3-, and particularly preferably -COO- or -O-.
一般式(1)中、m1及びn1は各々1~4の整数を表す。ただし、m1+n1=5を満たす。
m1は1又は2を表すことが好ましく、1を表すことがより好ましい。すなわち、n1は4又は3を表すことが好ましく、4を表すことがより好ましい。 In the general formula (1), m 1 and n 1 each represent an integer of 1 to 4. However, m 1 + n 1 = 5 is satisfied.
m 1 preferably represents 1 or 2, and more preferably 1. That is, n 1 preferably represents 4 or 3, and more preferably 4.
m1は1又は2を表すことが好ましく、1を表すことがより好ましい。すなわち、n1は4又は3を表すことが好ましく、4を表すことがより好ましい。 In the general formula (1), m 1 and n 1 each represent an integer of 1 to 4. However, m 1 + n 1 = 5 is satisfied.
m 1 preferably represents 1 or 2, and more preferably 1. That is, n 1 preferably represents 4 or 3, and more preferably 4.
上記一般式(1)で表される繰り返し単位(1a)は、下記一般式(2)で表される繰り返し単位であることが好ましい。
The repeating unit (1a) represented by the general formula (1) is preferably a repeating unit represented by the following general formula (2).
(一般式(2)で表される繰り返し単位)
(Repeating unit represented by general formula (2))
一般式(2)中、R1、R2、R3、L1、m1及びn1は、それぞれ一般式(1)におけるものと同じ意味を表す。
X’は-COO-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
R1、R2、X’及びL1が複数存在する場合、複数のR1、R2、X’及びL1は、それぞれ同じであっても異なっていてもよい。 In the general formula (2), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1), respectively.
X 'is -COO -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
'If and L 1 there are a plurality, the plurality of R 1, R 2, X' R 1, R 2, X and L 1 may be different from one another respectively the same.
X’は-COO-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
R1、R2、X’及びL1が複数存在する場合、複数のR1、R2、X’及びL1は、それぞれ同じであっても異なっていてもよい。 In the general formula (2), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1), respectively.
X 'is -COO -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
'If and L 1 there are a plurality, the plurality of R 1, R 2, X' R 1, R 2, X and L 1 may be different from one another respectively the same.
一般式(2)中、R2、R3、L1、m1及びn1は、それぞれ上記一般式(1)中のR2、R3、L1、m1及びn1と同義であり、好ましい例も同様である。
In the general formula (2), R 2, R 3, L 1, m 1 and n 1 are respectively synonymous with R 2, R 3, L 1 , m 1 and n 1 in the general formula (1) The same applies to preferred examples.
一般式(2)中のR1は、上記一般式(1)中のR1と同義である。
R1は下記一般式(4-1)又は(4-2)で表されることが好ましい。 R 1 in the general formula (2) is synonymous with R 1 in the general formula (1).
R 1 is preferably represented by the following general formula (4-1) or (4-2).
R1は下記一般式(4-1)又は(4-2)で表されることが好ましい。 R 1 in the general formula (2) is synonymous with R 1 in the general formula (1).
R 1 is preferably represented by the following general formula (4-1) or (4-2).
一般式(4-1)中、
R411、R412、R413、R414及びR415は、それぞれ独立に水素原子又はアルキル基を表す。
p41及びp42は、それぞれ独立に0~2の整数を表す。ただし、p41+p42≦2を満たす。R411、R412、R414及びR415が複数存在する場合、複数のR411、R412、R414及びR415は、それぞれ同じであっても異なっていてもよい。
一般式(4-2)中、
R421、R422、R423、R424及びR425は、それぞれ独立に水素原子又はアルキル基を表す。
p43及びp44は、それぞれ独立に0~2の整数を表す。ただし、p43+p44≦2を満たす。R421、R422、R424及びR425が複数存在する場合、複数のR421、R422、R424及びR425は、それぞれ同じであっても異なっていてもよい。
一般式(4-1)及び(4-2)中、*は結合位置を表す。 In general formula (4-1),
R 411 , R 412 , R 413 , R 414 and R 415 each independently represent a hydrogen atom or an alkyl group.
p 41 and p 42 each independently represent an integer of 0 to 2. However, p 41 + p 42 ≤ 2 is satisfied. If R 411, R 412, R 414 and R 415 there are a plurality, a plurality of R 411, R 412, R 414 and R 415 may be different from one another respectively the same.
In general formula (4-2),
R 421 , R 422 , R 423 , R 424 and R 425 each independently represent a hydrogen atom or an alkyl group.
p 43 and p 44 each independently represent an integer of 0 to 2. However, p 43 + p 44 ≤ 2 is satisfied. If R 421, R 422, R 424 and R 425 there are a plurality, a plurality of R 421, R 422, R 424 and R 425 may be different from one another respectively the same.
In the general formulas (4-1) and (4-2), * represents the bonding position.
R411、R412、R413、R414及びR415は、それぞれ独立に水素原子又はアルキル基を表す。
p41及びp42は、それぞれ独立に0~2の整数を表す。ただし、p41+p42≦2を満たす。R411、R412、R414及びR415が複数存在する場合、複数のR411、R412、R414及びR415は、それぞれ同じであっても異なっていてもよい。
一般式(4-2)中、
R421、R422、R423、R424及びR425は、それぞれ独立に水素原子又はアルキル基を表す。
p43及びp44は、それぞれ独立に0~2の整数を表す。ただし、p43+p44≦2を満たす。R421、R422、R424及びR425が複数存在する場合、複数のR421、R422、R424及びR425は、それぞれ同じであっても異なっていてもよい。
一般式(4-1)及び(4-2)中、*は結合位置を表す。 In general formula (4-1),
R 411 , R 412 , R 413 , R 414 and R 415 each independently represent a hydrogen atom or an alkyl group.
p 41 and p 42 each independently represent an integer of 0 to 2. However, p 41 + p 42 ≤ 2 is satisfied. If R 411, R 412, R 414 and R 415 there are a plurality, a plurality of R 411, R 412, R 414 and R 415 may be different from one another respectively the same.
In general formula (4-2),
R 421 , R 422 , R 423 , R 424 and R 425 each independently represent a hydrogen atom or an alkyl group.
p 43 and p 44 each independently represent an integer of 0 to 2. However, p 43 + p 44 ≤ 2 is satisfied. If R 421, R 422, R 424 and R 425 there are a plurality, a plurality of R 421, R 422, R 424 and R 425 may be different from one another respectively the same.
In the general formulas (4-1) and (4-2), * represents the bonding position.
一般式(4-1)中のR411、R412、R413、R414及びR415が、アルキル基を表す場合のアルキル基としては、直鎖状又は分岐鎖状の炭素数1~12のアルキル基が挙げられ、メチル基、又はエチル基が好ましく、メチル基がより好ましい。
上記アルキル基が置換基を有する場合の置換基としては、上記置換基Tが挙げられ、ハロゲン原子であることが好ましく、フッ素原子であることがより好ましい。 When R 411 , R 412 , R 413 , R 414 and R 415 in the general formula (4-1) represent an alkyl group, the alkyl group has a linear or branched carbon number of 1 to 12. Alkyl groups are mentioned, and a methyl group or an ethyl group is preferable, and a methyl group is more preferable.
When the alkyl group has a substituent, the substituent includes the above-mentioned Substituent T, which is preferably a halogen atom and more preferably a fluorine atom.
上記アルキル基が置換基を有する場合の置換基としては、上記置換基Tが挙げられ、ハロゲン原子であることが好ましく、フッ素原子であることがより好ましい。 When R 411 , R 412 , R 413 , R 414 and R 415 in the general formula (4-1) represent an alkyl group, the alkyl group has a linear or branched carbon number of 1 to 12. Alkyl groups are mentioned, and a methyl group or an ethyl group is preferable, and a methyl group is more preferable.
When the alkyl group has a substituent, the substituent includes the above-mentioned Substituent T, which is preferably a halogen atom and more preferably a fluorine atom.
R411、R412、R413、R414及びR415は水素原子であることが好ましい。
R 411 , R 412 , R 413 , R 414 and R 415 are preferably hydrogen atoms.
一般式(4-1)中、p41及びp42は、それぞれ独立に0又は1を表すことが好ましく、一方が0を表し、他方が1を表す、又はいずれもが1を表すことがより好ましく、一方が0を表し、他方が1を表すことが更に好ましい。
In the general formula (4-1), p 41 and p 42 preferably represent 0 or 1, respectively, and one represents 0 and the other represents 1, or both represent 1. It is preferable that one represents 0 and the other represents 1.
一般式(4-2)中のR421、R422、R423、R424及びR425がアルキル基を表す場合のアルキル基としては、上記一般式(4-1)中のR411、R412、R413、R414及びR415がアルキル基を表す場合のアルキル基として記載したものが挙げられ、好ましい例も同様である。
When R 421 , R 422 , R 423 , R 424 and R 425 in the general formula (4-2) represent an alkyl group, the alkyl group in the above general formula (4-1) is R 411 , R 412. , R 413 , R 414 and R 415 are described as alkyl groups when they represent alkyl groups, and preferred examples thereof are also the same.
R421、R422、R423、R424及びR425は水素原子であることが好ましい。
R 421 , R 422 , R 423 , R 424 and R 425 are preferably hydrogen atoms.
一般式(4-2)中、p43及びp44は、それぞれ独立に0又は1を表すことが好ましく、一方が0を表し、他方が1を表す、又はいずれもが1を表すことがより好ましく、一方が0を表し、他方が1を表すことが更に好ましい。
In the general formula (4-2), p 43 and p 44 preferably represent 0 or 1, respectively, and one represents 0 and the other represents 1, or both represent 1. It is preferable that one represents 0 and the other represents 1.
R1は上記一般式(4-1)で表される基であることが特に好ましい。
It is particularly preferable that R 1 is a group represented by the above general formula (4-1).
一般式(2)中、X’は-COO-、-CONR4-、-SO3-、-SO2NR4-、又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
In the general formula (2), X 'is -COO -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 -, or -C (CF 3) 2 O- and represents, R 4 is a hydrogen atom or Represents an alkyl group.
上記R4は、一般式(1)において説明したR4と同義であり、好ましい例も同様である。
The above R 4 has the same meaning as the R 4 described in the general formula (1), and the same applies to preferred examples.
X’は-COO-又は-SO3-であることが好ましく、-COO-であることがより好ましい。
X'is preferably -COO- or -SO 3- , and more preferably -COO-.
上記一般式(1)で表される繰り返し単位(1a)は、下記一般式(5)で表される繰り返し単位であることも好ましい。
It is also preferable that the repeating unit (1a) represented by the above general formula (1) is a repeating unit represented by the following general formula (5).
(一般式(5)で表される繰り返し単位)
(Repeating unit represented by the general formula (5))
一般式(5)中、R1、R2、R3、L1、m1及びn1は、それぞれ一般式(1)におけるものと同じ意味を表す。
R1、R2及びL1が複数存在する場合、複数のR1、R2及びL1は、それぞれ同じであっても異なっていてもよい。 In the general formula (5), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1), respectively.
If R 1, R 2 and L 1 there are a plurality, the plurality of R 1, R 2 and L 1 may be different from one another respectively the same.
R1、R2及びL1が複数存在する場合、複数のR1、R2及びL1は、それぞれ同じであっても異なっていてもよい。 In the general formula (5), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1), respectively.
If R 1, R 2 and L 1 there are a plurality, the plurality of R 1, R 2 and L 1 may be different from one another respectively the same.
一般式(5)中、R2、R3、L1、m1及びn1は、それぞれ上記一般式(1)中のR2、R3、L1、m1及びn1と同義であり、好ましい例も同様である。
In the general formula (5), R 2, R 3, L 1, m 1 and n 1 are respectively synonymous with R 2, R 3, L 1 , m 1 and n 1 in the general formula (1) The same applies to preferred examples.
一般式(5)中のR1は上記一般式(1)中のR1と同義である。
R1は下記一般式(6-1)又は(6-2)で表される基であることが好ましい。 R 1 in the general formula (5) is synonymous with R 1 in the general formula (1).
R 1 is preferably a group represented by the following general formula (6-1) or (6-2).
R1は下記一般式(6-1)又は(6-2)で表される基であることが好ましい。 R 1 in the general formula (5) is synonymous with R 1 in the general formula (1).
R 1 is preferably a group represented by the following general formula (6-1) or (6-2).
一般式(6-1)中、
R611、R612、R613、R614及びR615は、それぞれ独立に水素原子又はアルキル基を表す。
p61及びp62は、それぞれ独立に0~2の整数を表す。ただし、p61+p62≦2を満たす。R611、R612、R614及びR615が複数存在する場合、複数のR611、R612、R614及びR615は、それぞれ同じであっても異なっていてもよい。
一般式(6-2)中、
R621、R622、R623、R624及びR625は、それぞれ独立に水素原子又はアルキル基を表す。
p63及びp64は、それぞれ独立に0~2の整数を表す。ただし、p63+p64≦2を満たす。R621、R622、R624及びR625が複数存在する場合、複数のR621、R622、R624及びR625は、それぞれ同じであっても異なっていてもよい。
一般式(6-1)及び(6-2)中、*は結合位置を表す。 In general formula (6-1),
R 611 , R 612 , R 613 , R 614 and R 615 each independently represent a hydrogen atom or an alkyl group.
p 61 and p 62 each independently represent an integer of 0 to 2. However, p 61 + p 62 ≤ 2 is satisfied. If R 611, R 612, R 614 and R 615 there are a plurality, a plurality of R 611, R 612, R 614 and R 615 may be different from one another respectively the same.
In general formula (6-2),
R 621 , R 622 , R 623 , R 624 and R 625 each independently represent a hydrogen atom or an alkyl group.
p 63 and p 64 each independently represent an integer of 0 to 2. However, p 63 + p 64 ≤ 2 is satisfied. If R 621, R 622, R 624 and R 625 there are a plurality, a plurality of R 621, R 622, R 624 and R 625 may be different from one another respectively the same.
In the general formulas (6-1) and (6-2), * represents the bonding position.
R611、R612、R613、R614及びR615は、それぞれ独立に水素原子又はアルキル基を表す。
p61及びp62は、それぞれ独立に0~2の整数を表す。ただし、p61+p62≦2を満たす。R611、R612、R614及びR615が複数存在する場合、複数のR611、R612、R614及びR615は、それぞれ同じであっても異なっていてもよい。
一般式(6-2)中、
R621、R622、R623、R624及びR625は、それぞれ独立に水素原子又はアルキル基を表す。
p63及びp64は、それぞれ独立に0~2の整数を表す。ただし、p63+p64≦2を満たす。R621、R622、R624及びR625が複数存在する場合、複数のR621、R622、R624及びR625は、それぞれ同じであっても異なっていてもよい。
一般式(6-1)及び(6-2)中、*は結合位置を表す。 In general formula (6-1),
R 611 , R 612 , R 613 , R 614 and R 615 each independently represent a hydrogen atom or an alkyl group.
p 61 and p 62 each independently represent an integer of 0 to 2. However, p 61 + p 62 ≤ 2 is satisfied. If R 611, R 612, R 614 and R 615 there are a plurality, a plurality of R 611, R 612, R 614 and R 615 may be different from one another respectively the same.
In general formula (6-2),
R 621 , R 622 , R 623 , R 624 and R 625 each independently represent a hydrogen atom or an alkyl group.
p 63 and p 64 each independently represent an integer of 0 to 2. However, p 63 + p 64 ≤ 2 is satisfied. If R 621, R 622, R 624 and R 625 there are a plurality, a plurality of R 621, R 622, R 624 and R 625 may be different from one another respectively the same.
In the general formulas (6-1) and (6-2), * represents the bonding position.
一般式(6-1)中のR611、R612、R613、R614、R615、p61及びp62は、それぞれ上記一般式(4-1)中のR411、R412、R413、R414、R415、p41及びp42と同義であり、好ましい例も同様である。
R 611 , R 612 , R 613 , R 614 , R 615 , p 61 and p 62 in the general formula (6-1) are R 411 , R 412 and R 413 in the general formula (4-1), respectively. , R 414 , R 415 , p 41 and p 42, and so are the preferred examples.
一般式(6-2)中のR621、R622、R623、R624、R625、p63及びp64は、それぞれ上記一般式(4-2)中のR421、R422、R423、R424、R425、p43及びp44と同義であり、好ましい例も同様である。
R 621 , R 622 , R 623 , R 624 , R 625 , p 63 and p 64 in the general formula (6-2) are R 421 , R 422 and R 423 in the general formula (4-2), respectively. , R 424 , R 425 , p 43 and p 44, and so are the preferred examples.
R1は一般式(6-1)で表される基であることが特に好ましい。
It is particularly preferable that R 1 is a group represented by the general formula (6-1).
繰り返し単位(1a)が一般式(5)で表される繰り返し単位である場合、樹脂(A)は更に、後述するラクトン構造、カルボキシル基、水酸基及びスルホンアミド基からなる群より選ばれる少なくとも1つを有する繰り返し単位(1c)を含むことが特に好ましい。
When the repeating unit (1a) is a repeating unit represented by the general formula (5), the resin (A) is further selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group, which will be described later. It is particularly preferable to include a repeating unit (1c) having.
一般式(1)で表される繰り返し単位(1a)の具体例を以下に示すが、本発明はこれらに限定されるものではない。
Specific examples of the repeating unit (1a) represented by the general formula (1) are shown below, but the present invention is not limited thereto.
樹脂(A)において、繰り返し単位(1a)は1種単独で使用してもよく、2種以上を使用してもよい。
In the resin (A), the repeating unit (1a) may be used alone or in combination of two or more.
樹脂(A)における繰り返し単位(1a)の含有量は、樹脂(A)の全繰り返し単位に対して、5~75質量%であることが好ましく、5~70質量%であることがより好ましく、10~60質量%であることが更に好ましい。
The content of the repeating unit (1a) in the resin (A) is preferably 5 to 75% by mass, more preferably 5 to 70% by mass, based on all the repeating units of the resin (A). It is more preferably 10 to 60% by mass.
<酸分解性基を有する繰り返し単位(1b)>
樹脂(A)は、酸分解性基を有する繰り返し単位(1b)を含む。 <Repeating unit having an acid-degradable group (1b)>
The resin (A) contains a repeating unit (1b) having an acid-degradable group.
樹脂(A)は、酸分解性基を有する繰り返し単位(1b)を含む。 <Repeating unit having an acid-degradable group (1b)>
The resin (A) contains a repeating unit (1b) having an acid-degradable group.
酸分解性基は、極性基が酸の作用により脱離する基(脱離基)で保護された構造を有することが好ましい。
極性基としては、例えば、カルボキシル基、フェノール性水酸基、フッ素化アルコール基、スルホン酸基、スルホンアミド基、スルホニルイミド基、(アルキルスルホニル)(アルキルカルボニル)メチレン基、(アルキルスルホニル)(アルキルカルボニル)イミド基、ビス(アルキルカルボニル)メチレン基、ビス(アルキルカルボニル)イミド基、ビス(アルキルスルホニル)メチレン基、ビス(アルキルスルホニル)イミド基、トリス(アルキルカルボニル)メチレン基、及び、トリス(アルキルスルホニル)メチレン基等の酸性基(典型的には、2.38質量%テトラメチルアンモニウムヒドロキシド水溶液中で解離する基)、並びに、アルコール性水酸基等が挙げられる。 The acid-degradable group preferably has a structure in which the polar group is protected by a group (leaving group) that is eliminated by the action of an acid.
Examples of the polar group include a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonylimide group, a (alkylsulfonyl) (alkylcarbonyl) methylene group, and (alkylsulfonyl) (alkylcarbonyl). Imid group, bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, and tris (alkylsulfonyl) Examples thereof include acidic groups such as methylene groups (typically, groups dissociating in a 2.38 mass% tetramethylammonium hydroxide aqueous solution), alcoholic hydroxyl groups and the like.
極性基としては、例えば、カルボキシル基、フェノール性水酸基、フッ素化アルコール基、スルホン酸基、スルホンアミド基、スルホニルイミド基、(アルキルスルホニル)(アルキルカルボニル)メチレン基、(アルキルスルホニル)(アルキルカルボニル)イミド基、ビス(アルキルカルボニル)メチレン基、ビス(アルキルカルボニル)イミド基、ビス(アルキルスルホニル)メチレン基、ビス(アルキルスルホニル)イミド基、トリス(アルキルカルボニル)メチレン基、及び、トリス(アルキルスルホニル)メチレン基等の酸性基(典型的には、2.38質量%テトラメチルアンモニウムヒドロキシド水溶液中で解離する基)、並びに、アルコール性水酸基等が挙げられる。 The acid-degradable group preferably has a structure in which the polar group is protected by a group (leaving group) that is eliminated by the action of an acid.
Examples of the polar group include a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonylimide group, a (alkylsulfonyl) (alkylcarbonyl) methylene group, and (alkylsulfonyl) (alkylcarbonyl). Imid group, bis (alkylcarbonyl) methylene group, bis (alkylcarbonyl) imide group, bis (alkylsulfonyl) methylene group, bis (alkylsulfonyl) imide group, tris (alkylcarbonyl) methylene group, and tris (alkylsulfonyl) Examples thereof include acidic groups such as methylene groups (typically, groups dissociating in a 2.38 mass% tetramethylammonium hydroxide aqueous solution), alcoholic hydroxyl groups and the like.
なお、アルコール性水酸基とは、炭化水素基に結合した水酸基であって、芳香環上に直接結合した水酸基(フェノール性水酸基)以外の水酸基をいい、水酸基としてα位がフッ素原子などの電子求引性基で置換された脂肪族アルコール(例えば、ヘキサフルオロイソプロパノール基など)は除く。アルコール性水酸基としては、pKa(酸解離定数)が12以上20以下の水酸基であることが好ましい。
The alcoholic hydroxyl group is a hydroxyl group bonded to a hydrocarbon group and refers to a hydroxyl group other than the hydroxyl group directly bonded on the aromatic ring (phenolic hydroxyl group), and the α-position of the hydroxyl group is electron attraction such as a fluorine atom. Excludes aliphatic alcohols substituted with sex groups (eg, hexafluoroisopropanol groups). The alcoholic hydroxyl group is preferably a hydroxyl group having a pKa (acid dissociation constant) of 12 or more and 20 or less.
中でも、極性基としては、カルボキシル基、フェノール性水酸基、フッ素化アルコール基(好ましくはヘキサフルオロイソプロパノール基)、又は、スルホン酸基が好ましい。
Among them, as the polar group, a carboxyl group, a phenolic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), or a sulfonic acid group is preferable.
酸の作用により脱離する基(脱離基)としては、例えば、式(Y1)~(Y4)で表される基が挙げられる。
式(Y1):-C(Rx1)(Rx2)(Rx3)
式(Y2):-C(=O)OC(Rx1)(Rx2)(Rx3)
式(Y3):-C(R36)(R37)(OR38)
式(Y4):-C(Rn)(H)(Ar) Examples of the group desorbed by the action of an acid (leaving group) include groups represented by the formulas (Y1) to (Y4).
Equation (Y1): -C (Rx 1 ) (Rx 2 ) (Rx 3 )
Equation (Y2): -C (= O) OC (Rx 1 ) (Rx 2 ) (Rx 3 )
Equation (Y3): -C (R 36 ) (R 37 ) (OR 38 )
Formula (Y4): -C (Rn) (H) (Ar)
式(Y1):-C(Rx1)(Rx2)(Rx3)
式(Y2):-C(=O)OC(Rx1)(Rx2)(Rx3)
式(Y3):-C(R36)(R37)(OR38)
式(Y4):-C(Rn)(H)(Ar) Examples of the group desorbed by the action of an acid (leaving group) include groups represented by the formulas (Y1) to (Y4).
Equation (Y1): -C (Rx 1 ) (Rx 2 ) (Rx 3 )
Equation (Y2): -C (= O) OC (Rx 1 ) (Rx 2 ) (Rx 3 )
Equation (Y3): -C (R 36 ) (R 37 ) (OR 38 )
Formula (Y4): -C (Rn) (H) (Ar)
式(Y1)及び式(Y2)中、Rx1~Rx3は、それぞれ独立に、アルキル基(直鎖状若しくは分岐鎖状)又はシクロアルキル基(単環若しくは多環)、又は、アリール基(単環若しくは多環)を表す。
なかでも、Rx1~Rx3は、それぞれ独立に、直鎖状又は分岐鎖状のアルキル基を表すことが好ましく、Rx1~Rx3は、それぞれ独立に、直鎖状のアルキル基を表すことがより好ましい。
Rx1~Rx3の2つが結合して、単環又は多環を形成してもよい。
Rx1~Rx3のアルキル基としては、特に限定されないが、炭素数1~20のアルキル基が挙げられ、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、及び、t-ブチル基等の炭素数1~4のアルキル基が好ましい。
Rx1~Rx3のシクロアルキル基としては、特に限定されないが、炭素数3~20のシクロアルキル基が挙げられ、シクロペンチル基、及び、シクロヘキシル基等の単環のシクロアルキル基、並びに、ノルボルニル基、テトラシクロデカニル基、テトラシクロドデカニル基、及び、アダマンチル基等の多環のシクロアルキル基が好ましい。
Rx1~Rx3のアリール基は、炭素数6~14のアリール基が好ましく、例えば、フェニル基、ナフチル基、及びアントリル基等が挙げられる。
アルキル基、シクロアルキル基、アリール基は、置換基を有していてもよい。 In formulas (Y1) and (Y2), Rx 1 to Rx 3 are independently alkyl groups (linear or branched chain), cycloalkyl groups (monocyclic or polycyclic), or aryl groups (monocyclic or polycyclic), respectively. Represents monocyclic or polycyclic).
Among them, Rx 1 to Rx 3 preferably independently represent a linear or branched alkyl group, and Rx 1 to Rx 3 each independently represent a linear alkyl group. Is more preferable.
Two of Rx 1 to Rx 3 may be combined to form a monocyclic or polycyclic ring.
The alkyl group of Rx 1 to Rx 3 is not particularly limited, and examples thereof include an alkyl group having 1 to 20 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, and an isobutyl group. Further, an alkyl group having 1 to 4 carbon atoms such as a t-butyl group is preferable.
The cycloalkyl group of Rx 1 to Rx 3 is not particularly limited, and examples thereof include a cycloalkyl group having 3 to 20 carbon atoms, a cyclopentyl group, a monocyclic cycloalkyl group such as a cyclohexyl group, and a norbornyl group. , Tetracyclodecanyl group, tetracyclododecanyl group, and polycyclic cycloalkyl group such as adamantyl group are preferable.
The aryl group of Rx 1 to Rx 3 is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group.
The alkyl group, cycloalkyl group, and aryl group may have a substituent.
なかでも、Rx1~Rx3は、それぞれ独立に、直鎖状又は分岐鎖状のアルキル基を表すことが好ましく、Rx1~Rx3は、それぞれ独立に、直鎖状のアルキル基を表すことがより好ましい。
Rx1~Rx3の2つが結合して、単環又は多環を形成してもよい。
Rx1~Rx3のアルキル基としては、特に限定されないが、炭素数1~20のアルキル基が挙げられ、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、及び、t-ブチル基等の炭素数1~4のアルキル基が好ましい。
Rx1~Rx3のシクロアルキル基としては、特に限定されないが、炭素数3~20のシクロアルキル基が挙げられ、シクロペンチル基、及び、シクロヘキシル基等の単環のシクロアルキル基、並びに、ノルボルニル基、テトラシクロデカニル基、テトラシクロドデカニル基、及び、アダマンチル基等の多環のシクロアルキル基が好ましい。
Rx1~Rx3のアリール基は、炭素数6~14のアリール基が好ましく、例えば、フェニル基、ナフチル基、及びアントリル基等が挙げられる。
アルキル基、シクロアルキル基、アリール基は、置換基を有していてもよい。 In formulas (Y1) and (Y2), Rx 1 to Rx 3 are independently alkyl groups (linear or branched chain), cycloalkyl groups (monocyclic or polycyclic), or aryl groups (monocyclic or polycyclic), respectively. Represents monocyclic or polycyclic).
Among them, Rx 1 to Rx 3 preferably independently represent a linear or branched alkyl group, and Rx 1 to Rx 3 each independently represent a linear alkyl group. Is more preferable.
Two of Rx 1 to Rx 3 may be combined to form a monocyclic or polycyclic ring.
The alkyl group of Rx 1 to Rx 3 is not particularly limited, and examples thereof include an alkyl group having 1 to 20 carbon atoms, such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, and an isobutyl group. Further, an alkyl group having 1 to 4 carbon atoms such as a t-butyl group is preferable.
The cycloalkyl group of Rx 1 to Rx 3 is not particularly limited, and examples thereof include a cycloalkyl group having 3 to 20 carbon atoms, a cyclopentyl group, a monocyclic cycloalkyl group such as a cyclohexyl group, and a norbornyl group. , Tetracyclodecanyl group, tetracyclododecanyl group, and polycyclic cycloalkyl group such as adamantyl group are preferable.
The aryl group of Rx 1 to Rx 3 is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group.
The alkyl group, cycloalkyl group, and aryl group may have a substituent.
Rx1~Rx3の2つが結合して形成されるシクロアルキル基としては、シクロペンチル基、及び、シクロヘキシル基等の単環のシクロアルキル基、並びに、ノルボルニル基、テトラシクロデカニル基、テトラシクロドデカニル基、及び、アダマンチル基等の多環のシクロアルキル基が好ましく、炭素数5~6の単環のシクロアルキル基がより好ましい。
Rx1~Rx3の2つが結合して形成されるシクロアルキル基は、例えば、環を構成するメチレン基の1つが、酸素原子等のヘテロ原子、又は、カルボニル基等のヘテロ原子を有する基で置き換わっていてもよい。
Rx1~Rx3の2つが結合して形成されるシクロアルキル基は、置換基を有していてもよい。 Examples of the cycloalkyl group formed by combining two of Rx 1 to Rx 3 include a cyclopentyl group, a monocyclic cycloalkyl group such as a cyclohexyl group, and a norbornyl group, a tetracyclodecanyl group, and a tetracyclododeca. A polycyclic cycloalkyl group such as an nyl group and an adamantyl group is preferable, and a monocyclic cycloalkyl group having 5 to 6 carbon atoms is more preferable.
The cycloalkyl group formed by combining two of Rx 1 to Rx 3 is, for example, a group in which one of the methylene groups constituting the ring has a hetero atom such as an oxygen atom or a hetero atom such as a carbonyl group. It may be replaced.
The cycloalkyl group formed by bonding two of Rx 1 to Rx 3 may have a substituent.
Rx1~Rx3の2つが結合して形成されるシクロアルキル基は、例えば、環を構成するメチレン基の1つが、酸素原子等のヘテロ原子、又は、カルボニル基等のヘテロ原子を有する基で置き換わっていてもよい。
Rx1~Rx3の2つが結合して形成されるシクロアルキル基は、置換基を有していてもよい。 Examples of the cycloalkyl group formed by combining two of Rx 1 to Rx 3 include a cyclopentyl group, a monocyclic cycloalkyl group such as a cyclohexyl group, and a norbornyl group, a tetracyclodecanyl group, and a tetracyclododeca. A polycyclic cycloalkyl group such as an nyl group and an adamantyl group is preferable, and a monocyclic cycloalkyl group having 5 to 6 carbon atoms is more preferable.
The cycloalkyl group formed by combining two of Rx 1 to Rx 3 is, for example, a group in which one of the methylene groups constituting the ring has a hetero atom such as an oxygen atom or a hetero atom such as a carbonyl group. It may be replaced.
The cycloalkyl group formed by bonding two of Rx 1 to Rx 3 may have a substituent.
式(Y3)中、R36~R38は、それぞれ独立に、水素原子又は1価の有機基を表す。R37とR38とは、互いに結合して環を形成してもよい。1価の有機基としては、アルキル基、シクロアルキル基、アリール基、アラルキル基、及び、アルケニル基等が挙げられる。R36は水素原子であることも好ましい。
In formula (Y3), R 36 to R 38 each independently represent a hydrogen atom or a monovalent organic group. R 37 and R 38 may be combined with each other to form a ring. Examples of the monovalent organic group include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkenyl group and the like. It is also preferable that R 36 is a hydrogen atom.
式(Y3)としては、下記式(Y3-1)で表される基が好ましい。
As the formula (Y3), a group represented by the following formula (Y3-1) is preferable.
ここで、LY3及びLY4は、それぞれ独立に、水素原子、アルキル基、シクロアルキル基、アリール基、又は、これらを組み合わせた基(例えば、アルキル基とアリール基とを組み合わせた基)を表す。
Mは、単結合又は2価の連結基を表す。
Qは、ヘテロ原子を含んでいてもよいアルキル基、ヘテロ原子を含んでいてもよいシクロアルキル基、ヘテロ原子を含んでいてもよいアリール基、アミノ基、アンモニウム基、メルカプト基、シアノ基、アルデヒド基、又は、これらを組み合わせた基(例えば、アルキル基とシクロアルキル基とを組み合わせた基)を表す。
アルキル基及びシクロアルキル基は、例えば、メチレン基の1つが、酸素原子等のヘテロ原子、又は、カルボニル基等のヘテロ原子を有する基で置き換わっていてもよい。
なお、LY3及びLY4のうち一方は水素原子であり、他方はアルキル基、シクロアルキル基、アリール基、又は、アルキレン基とアリール基とを組み合わせた基であることが好ましい。
Q、M及びLY3の少なくとも2つが結合して環(好ましくは、5員若しくは6員環)を形成してもよい。
パターンの微細化の点では、LY4が2級又は3級アルキル基であることが好ましく、3級アルキル基であることがより好ましい。2級アルキル基としては、イソプロピル基、シクロヘキシル基又はノルボルニル基が挙げられ、3級アルキル基としては、tert-ブチル基又はアダマンタン基を挙げることができる。これらの態様では、Tg(ガラス転移温度)や活性化エネルギーが高くなるため、膜強度の担保に加え、かぶりの抑制ができる。 Here, LY3 and LY4 independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a group in which these are combined (for example, a group in which an alkyl group and an aryl group are combined). ..
M represents a single bond or a divalent linking group.
Q is an alkyl group that may contain a hetero atom, a cycloalkyl group that may contain a hetero atom, an aryl group that may contain a hetero atom, an amino group, an ammonium group, a mercapto group, a cyano group, and an aldehyde. Represents a group or a group in which these are combined (for example, a group in which an alkyl group and a cycloalkyl group are combined).
As for the alkyl group and the cycloalkyl group, for example, one of the methylene groups may be replaced with a heteroatom such as an oxygen atom or a group having a heteroatom such as a carbonyl group.
It is preferable that one of LY3 and LY4 is a hydrogen atom and the other is an alkyl group, a cycloalkyl group, an aryl group, or a group in which an alkylene group and an aryl group are combined.
At least two of Q, M and LY3 may be combined to form a ring (preferably a 5- or 6-membered ring).
From the viewpoint of pattern miniaturization, LY4 is preferably a secondary or tertiary alkyl group, and more preferably a tertiary alkyl group. Examples of the secondary alkyl group include an isopropyl group, a cyclohexyl group and a norbornyl group, and examples of the tertiary alkyl group include a tert-butyl group and an adamantan group. In these aspects, Tg (glass transition temperature) and activation energy are high, so that in addition to ensuring the film strength, fog can be suppressed.
Mは、単結合又は2価の連結基を表す。
Qは、ヘテロ原子を含んでいてもよいアルキル基、ヘテロ原子を含んでいてもよいシクロアルキル基、ヘテロ原子を含んでいてもよいアリール基、アミノ基、アンモニウム基、メルカプト基、シアノ基、アルデヒド基、又は、これらを組み合わせた基(例えば、アルキル基とシクロアルキル基とを組み合わせた基)を表す。
アルキル基及びシクロアルキル基は、例えば、メチレン基の1つが、酸素原子等のヘテロ原子、又は、カルボニル基等のヘテロ原子を有する基で置き換わっていてもよい。
なお、LY3及びLY4のうち一方は水素原子であり、他方はアルキル基、シクロアルキル基、アリール基、又は、アルキレン基とアリール基とを組み合わせた基であることが好ましい。
Q、M及びLY3の少なくとも2つが結合して環(好ましくは、5員若しくは6員環)を形成してもよい。
パターンの微細化の点では、LY4が2級又は3級アルキル基であることが好ましく、3級アルキル基であることがより好ましい。2級アルキル基としては、イソプロピル基、シクロヘキシル基又はノルボルニル基が挙げられ、3級アルキル基としては、tert-ブチル基又はアダマンタン基を挙げることができる。これらの態様では、Tg(ガラス転移温度)や活性化エネルギーが高くなるため、膜強度の担保に加え、かぶりの抑制ができる。 Here, LY3 and LY4 independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or a group in which these are combined (for example, a group in which an alkyl group and an aryl group are combined). ..
M represents a single bond or a divalent linking group.
Q is an alkyl group that may contain a hetero atom, a cycloalkyl group that may contain a hetero atom, an aryl group that may contain a hetero atom, an amino group, an ammonium group, a mercapto group, a cyano group, and an aldehyde. Represents a group or a group in which these are combined (for example, a group in which an alkyl group and a cycloalkyl group are combined).
As for the alkyl group and the cycloalkyl group, for example, one of the methylene groups may be replaced with a heteroatom such as an oxygen atom or a group having a heteroatom such as a carbonyl group.
It is preferable that one of LY3 and LY4 is a hydrogen atom and the other is an alkyl group, a cycloalkyl group, an aryl group, or a group in which an alkylene group and an aryl group are combined.
At least two of Q, M and LY3 may be combined to form a ring (preferably a 5- or 6-membered ring).
From the viewpoint of pattern miniaturization, LY4 is preferably a secondary or tertiary alkyl group, and more preferably a tertiary alkyl group. Examples of the secondary alkyl group include an isopropyl group, a cyclohexyl group and a norbornyl group, and examples of the tertiary alkyl group include a tert-butyl group and an adamantan group. In these aspects, Tg (glass transition temperature) and activation energy are high, so that in addition to ensuring the film strength, fog can be suppressed.
式(Y4)中、Arは、芳香環基を表す。Rnは、アルキル基、シクロアルキル基又はアリール基を表す。RnとArとは互いに結合して非芳香族環を形成してもよい。Arはより好ましくはアリール基である。
In the formula (Y4), Ar represents an aromatic ring group. Rn represents an alkyl group, a cycloalkyl group or an aryl group. Rn and Ar may be combined with each other to form a non-aromatic ring. Ar is more preferably an aryl group.
酸分解性基を有する繰り返し単位(1b)は、下記一般式(A)で表される繰り返し単位であることが好ましい。
The repeating unit (1b) having an acid-decomposable group is preferably a repeating unit represented by the following general formula (A).
一般式(A)中、L1Aは2価の連結基を表し、R1A~R3Aはそれぞれ独立に水素原子又は1価の置換基を表し、R4Aは酸の作用によって分解し脱離する基を表す。
L1Aは、2価の連結基を表す。2価の連結基としては、-CO-、-O-、-S―、-SO-、―SO2-、炭化水素基(例えば、アルキレン基、シクロアルキレン基、アルケニレン基、アリーレン基等)、及び、これらの複数が連結した連結基等が挙げられる。中でも、L1Aとしては、-CO-、アリーレン基が好ましい。
アリーレン基としては、フェニレン基が好ましい。
アルキレン基は、直鎖状であっても、分岐鎖状であってもよい。アルキレン基の炭素数は特に制限されないが、1~10が好ましく、1~3がより好ましい。 In the general formula (A), L 1A represents a divalent linking group, R 1A to R 3A independently represent a hydrogen atom or a monovalent substituent, and R 4A is decomposed and eliminated by the action of an acid. Represents a group.
L 1A represents a divalent linking group. Examples of the divalent linking group include -CO- , -O-, -S-, -SO-, -SO 2- , a hydrocarbon group (for example, an alkylene group, a cycloalkylene group, an alkaneylene group, an arylene group, etc.). In addition, a linking group in which a plurality of these are linked can be mentioned. Of these, -CO- and an arylene group are preferable as L 1A.
As the arylene group, a phenylene group is preferable.
The alkylene group may be linear or branched. The number of carbon atoms of the alkylene group is not particularly limited, but 1 to 10 is preferable, and 1 to 3 is more preferable.
L1Aは、2価の連結基を表す。2価の連結基としては、-CO-、-O-、-S―、-SO-、―SO2-、炭化水素基(例えば、アルキレン基、シクロアルキレン基、アルケニレン基、アリーレン基等)、及び、これらの複数が連結した連結基等が挙げられる。中でも、L1Aとしては、-CO-、アリーレン基が好ましい。
アリーレン基としては、フェニレン基が好ましい。
アルキレン基は、直鎖状であっても、分岐鎖状であってもよい。アルキレン基の炭素数は特に制限されないが、1~10が好ましく、1~3がより好ましい。 In the general formula (A), L 1A represents a divalent linking group, R 1A to R 3A independently represent a hydrogen atom or a monovalent substituent, and R 4A is decomposed and eliminated by the action of an acid. Represents a group.
L 1A represents a divalent linking group. Examples of the divalent linking group include -CO- , -O-, -S-, -SO-, -SO 2- , a hydrocarbon group (for example, an alkylene group, a cycloalkylene group, an alkaneylene group, an arylene group, etc.). In addition, a linking group in which a plurality of these are linked can be mentioned. Of these, -CO- and an arylene group are preferable as L 1A.
As the arylene group, a phenylene group is preferable.
The alkylene group may be linear or branched. The number of carbon atoms of the alkylene group is not particularly limited, but 1 to 10 is preferable, and 1 to 3 is more preferable.
R1A~R3Aは、それぞれ独立に、水素原子又は1価の置換基を表す。1価の置換基としては、例えば、アルキル基、シクロアルキル基、又はハロゲン原子が挙げられる。
アルキル基は、直鎖状であっても、分岐鎖状であってもよい。アルキル基の炭素数は特に制限されないが、1~10が好ましく、1~3がより好ましい。
シクロアルキル基は、単環型であってもよく、多環型であってもよい。このシクロアルキル基の炭素数は、好ましくは3~8とする。
ハロゲン原子としては、例えば、フッ素原子、塩素原子、臭素原子、及びヨウ素原子が挙げられる。 R 1A to R 3A independently represent a hydrogen atom or a monovalent substituent. Examples of the monovalent substituent include an alkyl group, a cycloalkyl group, and a halogen atom.
The alkyl group may be linear or branched. The number of carbon atoms of the alkyl group is not particularly limited, but 1 to 10 is preferable, and 1 to 3 is more preferable.
The cycloalkyl group may be monocyclic or polycyclic. The number of carbon atoms of this cycloalkyl group is preferably 3 to 8.
Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
アルキル基は、直鎖状であっても、分岐鎖状であってもよい。アルキル基の炭素数は特に制限されないが、1~10が好ましく、1~3がより好ましい。
シクロアルキル基は、単環型であってもよく、多環型であってもよい。このシクロアルキル基の炭素数は、好ましくは3~8とする。
ハロゲン原子としては、例えば、フッ素原子、塩素原子、臭素原子、及びヨウ素原子が挙げられる。 R 1A to R 3A independently represent a hydrogen atom or a monovalent substituent. Examples of the monovalent substituent include an alkyl group, a cycloalkyl group, and a halogen atom.
The alkyl group may be linear or branched. The number of carbon atoms of the alkyl group is not particularly limited, but 1 to 10 is preferable, and 1 to 3 is more preferable.
The cycloalkyl group may be monocyclic or polycyclic. The number of carbon atoms of this cycloalkyl group is preferably 3 to 8.
Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
R4Aは、酸の作用によって脱離する基(脱離基)を表す。
中でも、脱離基としては、上記式(Y1)~(Y4)で表される基が挙げられ、上記式(Y3)で表される基が好ましい。 R 4A represents a group (leaving group) that is eliminated by the action of an acid.
Among them, examples of the leaving group include groups represented by the above formulas (Y1) to (Y4), and groups represented by the above formula (Y3) are preferable.
中でも、脱離基としては、上記式(Y1)~(Y4)で表される基が挙げられ、上記式(Y3)で表される基が好ましい。 R 4A represents a group (leaving group) that is eliminated by the action of an acid.
Among them, examples of the leaving group include groups represented by the above formulas (Y1) to (Y4), and groups represented by the above formula (Y3) are preferable.
上記各基が置換基を有する場合、置換基としては、例えば、アルキル基(炭素数1~4)、ハロゲン原子、水酸基、アルコキシ基(炭素数1~4)、カルボキシル基、及び、アルコキシカルボニル基(炭素数2~6)等が挙げられる。置換基中の炭素数は、8以下が好ましい。
When each of the above groups has a substituent, the substituents include, for example, an alkyl group (1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group. (2 to 6 carbon atoms) and the like. The number of carbon atoms in the substituent is preferably 8 or less.
酸分解性基を有する繰り返し単位(1b)は、下記一般式(3)で表される繰り返し単位であることも好ましい。
It is also preferable that the repeating unit (1b) having an acid-decomposable group is a repeating unit represented by the following general formula (3).
一般式(3)中、
X3は水素原子、アルキル基、又はハロゲン原子を表す。
Zは酸の作用により脱離する基を有する基を表す。 In general formula (3),
X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
Z represents a group having a group that is eliminated by the action of an acid.
X3は水素原子、アルキル基、又はハロゲン原子を表す。
Zは酸の作用により脱離する基を有する基を表す。 In general formula (3),
X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
Z represents a group having a group that is eliminated by the action of an acid.
一般式(3)中、X3は、水素原子、アルキル基、又はハロゲン原子を表す。
In the general formula (3), X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
X3がアルキル基を表す場合のアルキル基は、直鎖状又は分岐鎖状の炭素数1~12のアルキル基が挙げられ、メチル基、エチル基、n-プロピル基、又はi―プロピル基が好ましく、メチル基、又はエチル基がより好ましく、メチル基がさらに好ましい。
上記アルキル基が置換基を有する場合の置換基としては、上記置換基Tに記載の置換基が挙げられ、ハロゲン原子であることが好ましく、フッ素原子であることがより好ましい。 When X 3 represents an alkyl group, the alkyl group includes a linear or branched alkyl group having 1 to 12 carbon atoms, and a methyl group, an ethyl group, an n-propyl group, or an i-propyl group. Preferably, a methyl group or an ethyl group is more preferable, and a methyl group is further preferable.
Examples of the substituent when the alkyl group has a substituent include the substituent described in the Substituent T, which is preferably a halogen atom and more preferably a fluorine atom.
上記アルキル基が置換基を有する場合の置換基としては、上記置換基Tに記載の置換基が挙げられ、ハロゲン原子であることが好ましく、フッ素原子であることがより好ましい。 When X 3 represents an alkyl group, the alkyl group includes a linear or branched alkyl group having 1 to 12 carbon atoms, and a methyl group, an ethyl group, an n-propyl group, or an i-propyl group. Preferably, a methyl group or an ethyl group is more preferable, and a methyl group is further preferable.
Examples of the substituent when the alkyl group has a substituent include the substituent described in the Substituent T, which is preferably a halogen atom and more preferably a fluorine atom.
X3がハロゲン原子を表す場合のハロゲン原子としては、フッ素原子、塩素原子、臭素原子、又はヨウ素原子が挙げられ、フッ素原子であることが好ましい。
Examples of the halogen atom when X 3 represents a halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
X3は、水素原子、フッ素置換若しくは無置換の炭素数1~12のアルキル基、又はフッ素原子であることが好ましく、メチル基、トリフルオロメチル基、又はフッ素原子であることがより好ましい。
X 3 is preferably a hydrogen atom, a fluorine-substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, or a fluorine atom, a methyl group, and more preferably a trifluoromethyl group or a fluorine atom.
一般式(3)中、Zは酸の作用により脱離する基を有する基を表す。
In the general formula (3), Z represents a group having a group eliminated by the action of an acid.
一般式(3)中、酸の作用により脱離する脱離基で極性基が保護された構造(酸分解性基)における極性基はカルボン酸基である。極性基をカルボン酸基とすることにより、脱離基の脱離前後での溶解コントラスト変化を大きくできるためLWR性能を向上させることができる。
In the general formula (3), the polar group in the structure (acid-degradable group) in which the polar group is protected by the leaving group desorbed by the action of an acid is a carboxylic acid group. By using a carboxylic acid group as the polar group, the change in dissolution contrast before and after the elimination of the leaving group can be increased, so that the LWR performance can be improved.
一般式(3)において、Zが脱離基そのものであってもよい。つまりこの場合、脱離基(Z)で極性基(カルボン酸基)が保護された構造(酸分解性基)が形成され、一般式(3)における-COO-Zが全体として酸分解性基を構成している。また、一般式(3)におけるZの一部に極性基がカルボン酸基である酸分解性基が含まれていてもよいし、Zが全体として極性基がカルボン酸基である酸分解性基を構成していてもよい。
酸の作用により脱離する脱離基としては、上記式(Y1)~(Y4)で表される基が挙げられる。 In the general formula (3), Z may be the leaving group itself. That is, in this case, a structure (acid-degradable group) in which the polar group (carboxylic acid group) is protected by the leaving group (Z) is formed, and -COO-Z in the general formula (3) is an acid-degradable group as a whole. Consists of. Further, a part of Z in the general formula (3) may contain an acid-degradable group whose polar group is a carboxylic acid group, or Z as a whole is an acid-degradable group whose polar group is a carboxylic acid group. May be configured.
Examples of the leaving group that are eliminated by the action of an acid include groups represented by the above formulas (Y1) to (Y4).
酸の作用により脱離する脱離基としては、上記式(Y1)~(Y4)で表される基が挙げられる。 In the general formula (3), Z may be the leaving group itself. That is, in this case, a structure (acid-degradable group) in which the polar group (carboxylic acid group) is protected by the leaving group (Z) is formed, and -COO-Z in the general formula (3) is an acid-degradable group as a whole. Consists of. Further, a part of Z in the general formula (3) may contain an acid-degradable group whose polar group is a carboxylic acid group, or Z as a whole is an acid-degradable group whose polar group is a carboxylic acid group. May be configured.
Examples of the leaving group that are eliminated by the action of an acid include groups represented by the above formulas (Y1) to (Y4).
繰り返し単位の酸分解性が優れる点から、極性基を保護する脱離基において、極性基(又はその残基)に非芳香族環が直接結合している場合、上記非芳香族環中の、上記極性基(又はその残基)と直接結合している環員原子に隣接する環員原子は、置換基としてフッ素原子等のハロゲン原子を有さないのも好ましい。
In the desorbing group that protects the polar group, when the non-aromatic ring is directly bonded to the polar group (or its residue), the non-aromatic ring in the non-aromatic ring, from the viewpoint of excellent acid decomposition property of the repeating unit, It is also preferable that the ring member atom adjacent to the ring member atom directly bonded to the polar group (or its residue) does not have a halogen atom such as a fluorine atom as a substituent.
酸の作用により脱離する脱離基は、他にも、3-メチル-2-シクロペンテニル基のような置換基(アルキル基等)を有する2-シクロペンテニル基、及び、1,1,4,4-テトラメチルシクロヘキシル基のような置換基(アルキル基等)を有するシクロヘキシル基でもよい。
Other leaving groups that are eliminated by the action of an acid include a 2-cyclopentenyl group having a substituent (alkyl group, etc.) such as a 3-methyl-2-cyclopentenyl group, and 1,1,4. , A cyclohexyl group having a substituent (alkyl group, etc.) such as 4-tetramethylcyclohexyl group may be used.
・繰り返し単位(1b-1)
繰り返し単位(1b)は、上記一般式(3)におけるZが上記式(Y1)で表される繰り返し単位、すなわち、下記一般式(3-1)で表される繰り返し単位(1b-1)であることが好ましい。 -Repeating unit (1b-1)
The repeating unit (1b) is a repeating unit in which Z in the general formula (3) is represented by the above formula (Y1), that is, a repeating unit (1b-1) represented by the following general formula (3-1). It is preferable to have.
繰り返し単位(1b)は、上記一般式(3)におけるZが上記式(Y1)で表される繰り返し単位、すなわち、下記一般式(3-1)で表される繰り返し単位(1b-1)であることが好ましい。 -Repeating unit (1b-1)
The repeating unit (1b) is a repeating unit in which Z in the general formula (3) is represented by the above formula (Y1), that is, a repeating unit (1b-1) represented by the following general formula (3-1). It is preferable to have.
一般式(3-1)中、
X3は水素原子、アルキル基、又はハロゲン原子を表す。
RZ1~RZ3は、それぞれ独立に、アルキル基、シクロアルキル基、アルケニル基、又はアリール基を表す。RZ1~RZ3のいずれか2つが結合して環構造を形成していてもよい。 In general formula (3-1),
X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
R Z1 to R Z3 independently represent an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group. Any two of R Z1 to R Z3 may be bonded to form a ring structure.
X3は水素原子、アルキル基、又はハロゲン原子を表す。
RZ1~RZ3は、それぞれ独立に、アルキル基、シクロアルキル基、アルケニル基、又はアリール基を表す。RZ1~RZ3のいずれか2つが結合して環構造を形成していてもよい。 In general formula (3-1),
X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
R Z1 to R Z3 independently represent an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group. Any two of R Z1 to R Z3 may be bonded to form a ring structure.
一般式(3-1)中のX3は、上記一般式(3)におけるX3と同義であり、好ましい例も同様である。
X 3 in the general formula (3-1) has the same meaning as X 3 in the general formula (3), and the same applies to preferred examples.
一般式(3-1)中のRZ1~RZ3は、上記式(Y-1)中のRx1~Rx3と同義であり、好ましい例も同様である。
R Z1 to R Z3 in the general formula (3-1) are synonymous with Rx 1 to Rx 3 in the above formula (Y-1), and preferred examples are also the same.
・繰り返し単位(1b-2)
繰り返し単位(1b)は、下記一般式(3-2)で表される繰り返し単位(1b-2)であることがより好ましい。 ・ Repeat unit (1b-2)
The repeating unit (1b) is more preferably a repeating unit (1b-2) represented by the following general formula (3-2).
繰り返し単位(1b)は、下記一般式(3-2)で表される繰り返し単位(1b-2)であることがより好ましい。 ・ Repeat unit (1b-2)
The repeating unit (1b) is more preferably a repeating unit (1b-2) represented by the following general formula (3-2).
一般式(3-2)中、
X3は水素原子、アルキル基、又はハロゲン原子を表す。
R3bはアルキル基、シクロアルキル基、又はアリール基を表す。
m3は1以上の整数を表す。 In general formula (3-2),
X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
R 3b represents an alkyl group, a cycloalkyl group, or an aryl group.
m 3 represents an integer of 1 or more.
X3は水素原子、アルキル基、又はハロゲン原子を表す。
R3bはアルキル基、シクロアルキル基、又はアリール基を表す。
m3は1以上の整数を表す。 In general formula (3-2),
X 3 represents a hydrogen atom, an alkyl group, or a halogen atom.
R 3b represents an alkyl group, a cycloalkyl group, or an aryl group.
m 3 represents an integer of 1 or more.
一般式(3-2)中のX3は、上記一般式(3)におけるX3と同義であり、好ましい例も同様である。
X 3 in the general formula (3-2) has the same meaning as X 3 in the general formula (3), and the same applies to preferred examples.
一般式(3-2)中、R3bは、アルキル基、シクロアルキル基、又はアリール基を表す。アルキル基、シクロアルキル基、及びアリール基は、置換基を有していてもよい。
In the general formula (3-2), R 3b represents an alkyl group, a cycloalkyl group, or an aryl group. The alkyl group, cycloalkyl group, and aryl group may have a substituent.
R3bがアルキル基を表す場合のアルキル基、及びアルキル基が有してもよい置換基としては、上記式(Y-1)中のRx1~Rx3としてのアルキル基、及びアルキル基が有してもよい置換基が挙げられ、好ましい例も同様である。
When R 3b represents an alkyl group, the alkyl group and the substituent that the alkyl group may have include an alkyl group as Rx 1 to Rx 3 in the above formula (Y-1) and an alkyl group. Substituents may be mentioned, and preferred examples are the same.
R3bがシクロアルキル基を表す場合のシクロアルキル基としては、上記式(Y-1)中のRx1~Rx3としてのシクロアルキル基が挙げられ、好ましい例も同様である。
Examples of the cycloalkyl group when R 3b represents a cycloalkyl group include cycloalkyl groups as Rx 1 to Rx 3 in the above formula (Y-1), and preferred examples thereof are also the same.
R3bがアリール基を表す場合のアリール基としては、上記式(Y-1)中のRx1~Rx3としてのアリール基が挙げられ、フェニル基又はナフチル基であることが好ましい。
Examples of the aryl group when R 3b represents an aryl group include aryl groups as Rx 1 to Rx 3 in the above formula (Y-1), and a phenyl group or a naphthyl group is preferable.
R3bは、直鎖状若しくは分岐状のアルキル基であることが好ましく、メチル基、エチル基、i-プロピル基、n-ブチル基、t-ブチル基、又はシクロヘキシル基であることがより好ましく、メチル基、エチル基、i―プロピル基、又はt-ブチル基であることがさらに好ましい。
R 3b is preferably a linear or branched alkyl group, more preferably a methyl group, an ethyl group, an i-propyl group, an n-butyl group, a t-butyl group, or a cyclohexyl group. More preferably, it is a methyl group, an ethyl group, an i-propyl group, or a t-butyl group.
一般式(3-2)中、m3は1以上の整数を表す。m3は1~10であることが好ましく、1~6がより好ましく、3又は4がさらに好ましい。
In the general formula (3-2), m 3 represents an integer of 1 or more. m 3 is preferably 1 to 10, more preferably 1 to 6, and even more preferably 3 or 4.
以下に、酸分解性基を有する繰り返し単位(1b)を例示するが、本発明はこれらに限定されるものではない。
The repeating unit (1b) having an acid-decomposable group is illustrated below, but the present invention is not limited thereto.
樹脂(A)において、繰り返し単位(1b)は1種単独で使用してもよく、2種以上を使用してもよい。
In the resin (A), the repeating unit (1b) may be used alone or in combination of two or more.
繰り返し単位(1b)の含有量は、樹脂(A)の全繰り返し単位に対して、20~80質量%であることが好ましく、25~70質量%であることがより好ましく、30~70質量%であることが更に好ましい。
The content of the repeating unit (1b) is preferably 20 to 80% by mass, more preferably 25 to 70% by mass, and 30 to 70% by mass with respect to all the repeating units of the resin (A). Is more preferable.
<繰り返し単位(1c)>
樹脂(A)は、更に、ラクトン構造、カルボキシル基、水酸基及びスルホンアミド基からなる群より選ばれる少なくとも1つを有する繰り返し単位(1c)を含むことが好ましい。繰り返し単位(1c)は、上記繰り返し単位(1a)及び繰り返し単位(1b)とは異なる繰り返し単位である。
前述のように、繰り返し単位(1a)は高極性のR1を含むが、繰り返し単位(1b)は典型的には極性が低い。そこで、繰り返し単位(1a)と繰り返し単位(1b)の間の極性を有する繰り返し単位(1c)を含むことにより、本発明の組成物から形成された膜中で樹脂(A)の各繰り返し単位がより均一に存在する状態となり、化合物(B)の分布の均一性が増加し、化合物(B)の凝集抑制の効果がより顕著になると考えられる。 <Repeating unit (1c)>
The resin (A) further preferably contains a repeating unit (1c) having at least one selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group. The repeating unit (1c) is a repeating unit different from the repeating unit (1a) and the repeating unit (1b).
As mentioned above, the repeating unit (1a) includes the highly polar R 1 , but the repeating unit (1b) is typically less polar. Therefore, by including the repeating unit (1c) having a polarity between the repeating unit (1a) and the repeating unit (1b), each repeating unit of the resin (A) is contained in the film formed from the composition of the present invention. It is considered that the state of existence becomes more uniform, the uniformity of the distribution of the compound (B) increases, and the effect of suppressing the aggregation of the compound (B) becomes more remarkable.
樹脂(A)は、更に、ラクトン構造、カルボキシル基、水酸基及びスルホンアミド基からなる群より選ばれる少なくとも1つを有する繰り返し単位(1c)を含むことが好ましい。繰り返し単位(1c)は、上記繰り返し単位(1a)及び繰り返し単位(1b)とは異なる繰り返し単位である。
前述のように、繰り返し単位(1a)は高極性のR1を含むが、繰り返し単位(1b)は典型的には極性が低い。そこで、繰り返し単位(1a)と繰り返し単位(1b)の間の極性を有する繰り返し単位(1c)を含むことにより、本発明の組成物から形成された膜中で樹脂(A)の各繰り返し単位がより均一に存在する状態となり、化合物(B)の分布の均一性が増加し、化合物(B)の凝集抑制の効果がより顕著になると考えられる。 <Repeating unit (1c)>
The resin (A) further preferably contains a repeating unit (1c) having at least one selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group. The repeating unit (1c) is a repeating unit different from the repeating unit (1a) and the repeating unit (1b).
As mentioned above, the repeating unit (1a) includes the highly polar R 1 , but the repeating unit (1b) is typically less polar. Therefore, by including the repeating unit (1c) having a polarity between the repeating unit (1a) and the repeating unit (1b), each repeating unit of the resin (A) is contained in the film formed from the composition of the present invention. It is considered that the state of existence becomes more uniform, the uniformity of the distribution of the compound (B) increases, and the effect of suppressing the aggregation of the compound (B) becomes more remarkable.
・ラクトン構造を有する繰り返し単位
ラクトン構造としては、ラクトン環を有していればよく、5~7員環のラクトン環を有するラクトン構造が好ましい。
ビシクロ構造又はスピロ構造を形成する形で5~7員環ラクトン環に他の環が縮環しているラクトン構造も好ましい。ビシクロ構造又はスピロ構造を形成する形で5~7員環スルトン環に他の環が縮環しているスルトン構造も好ましい。 -Repeating unit having a lactone structure The lactone structure may have a lactone ring, and a lactone structure having a 5- to 7-membered lactone ring is preferable.
A lactone structure in which a 5- to 7-membered ring lactone ring is fused with another ring to form a bicyclo structure or a spiro structure is also preferable. A sultone structure in which another ring is condensed into a 5- to 7-membered sultone ring in the form of forming a bicyclo structure or a spiro structure is also preferable.
ラクトン構造としては、ラクトン環を有していればよく、5~7員環のラクトン環を有するラクトン構造が好ましい。
ビシクロ構造又はスピロ構造を形成する形で5~7員環ラクトン環に他の環が縮環しているラクトン構造も好ましい。ビシクロ構造又はスピロ構造を形成する形で5~7員環スルトン環に他の環が縮環しているスルトン構造も好ましい。 -Repeating unit having a lactone structure The lactone structure may have a lactone ring, and a lactone structure having a 5- to 7-membered lactone ring is preferable.
A lactone structure in which a 5- to 7-membered ring lactone ring is fused with another ring to form a bicyclo structure or a spiro structure is also preferable. A sultone structure in which another ring is condensed into a 5- to 7-membered sultone ring in the form of forming a bicyclo structure or a spiro structure is also preferable.
なかでも、樹脂(A)は、下記一般式(LC1-1)~(LC1-22)のいずれかで表されるラクトン構造を有する繰り返し単位を含むことが好ましい。また、ラクトン構造が主鎖に直接結合していてもよい。
なかでも、一般式(LC1-1)、一般式(LC1-4)、一般式(LC1-5)、一般式(LC1-8)、一般式(LC1-16)、一般式(LC1-21)又は一般式(LC1-22)で表されるラクトン構造が好ましい。 Among them, the resin (A) preferably contains a repeating unit having a lactone structure represented by any of the following general formulas (LC1-1) to (LC1-22). Further, the lactone structure may be directly bonded to the main chain.
Among them, the general formula (LC1-1), the general formula (LC1-4), the general formula (LC1-5), the general formula (LC1-8), the general formula (LC1-16), and the general formula (LC1-21). Alternatively, a lactone structure represented by the general formula (LC1-22) is preferable.
なかでも、一般式(LC1-1)、一般式(LC1-4)、一般式(LC1-5)、一般式(LC1-8)、一般式(LC1-16)、一般式(LC1-21)又は一般式(LC1-22)で表されるラクトン構造が好ましい。 Among them, the resin (A) preferably contains a repeating unit having a lactone structure represented by any of the following general formulas (LC1-1) to (LC1-22). Further, the lactone structure may be directly bonded to the main chain.
Among them, the general formula (LC1-1), the general formula (LC1-4), the general formula (LC1-5), the general formula (LC1-8), the general formula (LC1-16), and the general formula (LC1-21). Alternatively, a lactone structure represented by the general formula (LC1-22) is preferable.
ラクトン構造は置換基(Rb2)を有していても、有していなくてもよい。置換基(Rb2)としては、炭素数1~8のアルキル基、炭素数4~7のシクロアルキル基、炭素数1~8のアルコキシ基、炭素数2~8のアルコキシカルボニル基、カルボキシ基、ハロゲン原子、水酸基、又はシアノ基等が好ましく、炭素数1~4のアルキル基、又はシアノ基がより好ましい。n2は、0~4の整数を表す。n2が2以上の場合、複数存在する置換基(Rb2)は、同一でも異なっていてもよい。また、複数存在する置換基(Rb2)同士が結合して環を形成してもよい。
The lactone structure may or may not have a substituent (Rb 2). Examples of the substituent (Rb 2 ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 2 to 8 carbon atoms, and a carboxy group. A halogen atom, a hydroxyl group, a cyano group or the like is preferable, and an alkyl group having 1 to 4 carbon atoms or a cyano group is more preferable. n 2 represents an integer from 0 to 4. When n 2 is 2 or more, the plurality of substituents (Rb 2 ) may be the same or different. Further, a plurality of existing substituents (Rb 2 ) may be bonded to each other to form a ring.
ラクトン構造を有する繰り返し単位としては、下記一般式(LS1)で表される繰り返し単位が好ましい。
As the repeating unit having a lactone structure, a repeating unit represented by the following general formula (LS1) is preferable.
上記一般式(LS1)中、
ALSは、エステル結合(-COO-で表される基)又はアミド結合(-CONH-で表される基)を表す。 In the above general formula (LS1),
A LS represents an ester bond (-COO- group represented by) or an amide bond (a group represented by -CONH-).
ALSは、エステル結合(-COO-で表される基)又はアミド結合(-CONH-で表される基)を表す。 In the above general formula (LS1),
A LS represents an ester bond (-COO- group represented by) or an amide bond (a group represented by -CONH-).
tは、-RLS2-RLS3-で表される構造の繰り返し数であり、0~5の整数を表し、0又は1であることが好ましく、0であることがより好ましい。tが0である場合、(-RLS2-RLS3-)tは、単結合となる。
t is the number of repetitions of the structure represented by −R LS2 −R LS3− , represents an integer of 0 to 5, is preferably 0 or 1, and more preferably 0. When t is 0, (-R LS2- R LS3- ) t is a single bond.
RLS2は、アルキレン基、シクロアルキレン基、又はその組み合わせを表す。RLS2が複数存在する場合、複数存在するRLS2は、それぞれ同一でも異なっていてもよい。
RLS2のアルキレン基又はシクロアルキレン基は置換基を有してもよい。 R LS2 represents an alkylene group, a cycloalkylene group, or a combination thereof. When a plurality of R LS2s are present, the plurality of R LS2s may be the same or different from each other.
The alkylene group or cycloalkylene group of RLS2 may have a substituent.
RLS2のアルキレン基又はシクロアルキレン基は置換基を有してもよい。 R LS2 represents an alkylene group, a cycloalkylene group, or a combination thereof. When a plurality of R LS2s are present, the plurality of R LS2s may be the same or different from each other.
The alkylene group or cycloalkylene group of RLS2 may have a substituent.
RLS3は、単結合、エーテル結合、エステル結合、アミド結合、ウレタン結合、又はウレア結合を表す。RLS3が複数存在する場合、複数存在するRLS3は、それぞれ同一でも異なっていてもよい。
中でもRLS3は、エーテル結合又はエステル結合が好ましく、エステル結合がより好ましい。 RLS3 represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond, or a urea bond. When a plurality of R LS3s are present, the plurality of R LS3s may be the same or different from each other.
Among them, R LS3 is preferably an ether bond or an ester bond, and more preferably an ester bond.
中でもRLS3は、エーテル結合又はエステル結合が好ましく、エステル結合がより好ましい。 RLS3 represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond, or a urea bond. When a plurality of R LS3s are present, the plurality of R LS3s may be the same or different from each other.
Among them, R LS3 is preferably an ether bond or an ester bond, and more preferably an ester bond.
RLS4は、ラクトン構造を有する1価の有機基を表す。
なかでも、前述の一般式(LC1-1)~(LC1-22)で表される構造で表される構造のいずれかにおいて、ラクトン構造を構成する炭素原子1つから、水素原子を1つ除いてなる基であることが好ましい。なお、上記水素原子を1つ除かれる炭素原子は、置換基(Rb2)を構成する炭素原子ではないことが好ましい。 RLS4 represents a monovalent organic group having a lactone structure.
Among them, in any of the structures represented by the above-mentioned general formulas (LC1-1) to (LC1-22), one hydrogen atom is removed from one carbon atom constituting the lactone structure. It is preferably a group consisting of It is preferable that the carbon atom from which one hydrogen atom is removed is not a carbon atom constituting a substituent (Rb 2).
なかでも、前述の一般式(LC1-1)~(LC1-22)で表される構造で表される構造のいずれかにおいて、ラクトン構造を構成する炭素原子1つから、水素原子を1つ除いてなる基であることが好ましい。なお、上記水素原子を1つ除かれる炭素原子は、置換基(Rb2)を構成する炭素原子ではないことが好ましい。 RLS4 represents a monovalent organic group having a lactone structure.
Among them, in any of the structures represented by the above-mentioned general formulas (LC1-1) to (LC1-22), one hydrogen atom is removed from one carbon atom constituting the lactone structure. It is preferably a group consisting of It is preferable that the carbon atom from which one hydrogen atom is removed is not a carbon atom constituting a substituent (Rb 2).
RLS1は、水素原子、ハロゲン原子、又は1価の有機基(好ましくはメチル基)を表す。
RLS1 represents a hydrogen atom, a halogen atom, or a monovalent organic group (preferably a methyl group).
ラクトン構造を有する繰り返し単位の具体例として、国際公開第2018/193954号の段落[0088]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。また、本発明の樹脂(A)は上記以外のラクトン構造を有する繰り返し単位を有していてもよい。
As a specific example of the repeating unit having a lactone structure, the description in paragraph [0088] of International Publication No. 2018/193954 can be taken into consideration, and these contents are incorporated in the present specification. Further, the resin (A) of the present invention may have a repeating unit having a lactone structure other than the above.
・水酸基を有する繰り返し単位
水酸基としては、アルコール性水酸基、フッ素化アルコール基(好ましくはヘキサフルオロイソプロパノール基)、又はフェノール性水酸基が挙げられる。 -Repeat unit having a hydroxyl group Examples of the hydroxyl group include an alcoholic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), and a phenolic hydroxyl group.
水酸基としては、アルコール性水酸基、フッ素化アルコール基(好ましくはヘキサフルオロイソプロパノール基)、又はフェノール性水酸基が挙げられる。 -Repeat unit having a hydroxyl group Examples of the hydroxyl group include an alcoholic hydroxyl group, a fluorinated alcohol group (preferably a hexafluoroisopropanol group), and a phenolic hydroxyl group.
アルコール性水酸基を有する繰り返し単位としては、一般式(A5)で表される繰り返し単位であることが好ましい。
The repeating unit having an alcoholic hydroxyl group is preferably a repeating unit represented by the general formula (A5).
一般式(A5)中、
XQ5は、水素原子、ハロゲン原子、又は1価の有機基(好ましくはメチル基)を表す。
RQ5は、アルキレン基(直鎖状若しくは分岐鎖状。好ましくは炭素数1~5)、又は、非芳香族性環基を表す。 In the general formula (A5),
X Q5 represents a hydrogen atom, a halogen atom, or a monovalent organic group (preferably a methyl group).
RQ5 represents an alkylene group (linear or branched chain, preferably 1 to 5 carbon atoms) or a non-aromatic ring group.
XQ5は、水素原子、ハロゲン原子、又は1価の有機基(好ましくはメチル基)を表す。
RQ5は、アルキレン基(直鎖状若しくは分岐鎖状。好ましくは炭素数1~5)、又は、非芳香族性環基を表す。 In the general formula (A5),
X Q5 represents a hydrogen atom, a halogen atom, or a monovalent organic group (preferably a methyl group).
RQ5 represents an alkylene group (linear or branched chain, preferably 1 to 5 carbon atoms) or a non-aromatic ring group.
上記非芳香族性環基としては、例えば、単環式炭化水素環基及び多環式炭化水素環基が挙げられる。単環式炭化水素環基としては、例えば、炭素数3~12(好ましくは炭素数3~7)のシクロアルカン環基、及び、炭素数3~12のシクロアルケン環基が挙げられる。
多環式炭化水素環基としては、例えば、環集合炭化水素環基及び架橋環式炭化水素環基が挙げられる。
架橋環式炭化水素環としては、例えば、2環式炭化水素環、3環式炭化水素環、及び、4環式炭化水素環等が挙げられる。また、架橋環式炭化水素環は、5~8員シクロアルカン環が複数個縮合した縮合環でもよい。
架橋環式炭化水素環基は、ノルボルナン環基、アダマンタン環基、ビシクロオクタン環基、又は、トリシクロ[5、2、1、02,6]デカン環基が好ましい。 Examples of the non-aromatic ring group include a monocyclic hydrocarbon ring group and a polycyclic hydrocarbon ring group. Examples of the monocyclic hydrocarbon ring group include a cycloalkane ring group having 3 to 12 carbon atoms (preferably 3 to 7 carbon atoms) and a cycloalkene ring group having 3 to 12 carbon atoms.
Examples of the polycyclic hydrocarbon ring group include a ring-assembled hydrocarbon ring group and a crosslinked ring-type hydrocarbon ring group.
Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, a tetracyclic hydrocarbon ring and the like. Further, the crosslinked cyclic hydrocarbon ring may be a condensed ring in which a plurality of 5- to 8-membered cycloalkane rings are condensed.
The crosslinked cyclic hydrocarbon ring group is preferably a norbornane ring group, an adamantane ring group, a bicyclooctane ring group, or a tricyclo [5, 2, 1, 02, 6] decane ring group.
多環式炭化水素環基としては、例えば、環集合炭化水素環基及び架橋環式炭化水素環基が挙げられる。
架橋環式炭化水素環としては、例えば、2環式炭化水素環、3環式炭化水素環、及び、4環式炭化水素環等が挙げられる。また、架橋環式炭化水素環は、5~8員シクロアルカン環が複数個縮合した縮合環でもよい。
架橋環式炭化水素環基は、ノルボルナン環基、アダマンタン環基、ビシクロオクタン環基、又は、トリシクロ[5、2、1、02,6]デカン環基が好ましい。 Examples of the non-aromatic ring group include a monocyclic hydrocarbon ring group and a polycyclic hydrocarbon ring group. Examples of the monocyclic hydrocarbon ring group include a cycloalkane ring group having 3 to 12 carbon atoms (preferably 3 to 7 carbon atoms) and a cycloalkene ring group having 3 to 12 carbon atoms.
Examples of the polycyclic hydrocarbon ring group include a ring-assembled hydrocarbon ring group and a crosslinked ring-type hydrocarbon ring group.
Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, a tetracyclic hydrocarbon ring and the like. Further, the crosslinked cyclic hydrocarbon ring may be a condensed ring in which a plurality of 5- to 8-membered cycloalkane rings are condensed.
The crosslinked cyclic hydrocarbon ring group is preferably a norbornane ring group, an adamantane ring group, a bicyclooctane ring group, or a tricyclo [5, 2, 1, 02, 6] decane ring group.
上記アルキレン基及び上記非芳香族性環基は、-(OH)q5以外の置換基を有さないのも好ましい。
It is also preferable that the alkylene group and the non-aromatic ring group do not have a substituent other than − (OH) q5.
一般式(A5)中、q5は、1~5の整数を表す。
フッ素化アルコール基を有する繰り返し単位としては、一般式(A6)で表される繰り返し単位であることが好ましい。 In the general formula (A5), q5 represents an integer of 1 to 5.
The repeating unit having a fluorinated alcohol group is preferably a repeating unit represented by the general formula (A6).
フッ素化アルコール基を有する繰り返し単位としては、一般式(A6)で表される繰り返し単位であることが好ましい。 In the general formula (A5), q5 represents an integer of 1 to 5.
The repeating unit having a fluorinated alcohol group is preferably a repeating unit represented by the general formula (A6).
一般式(A6)中、
XQ6は、水素原子、ハロゲン原子、又は1価の有機基(好ましくはメチル基)を表す。
RQ6は、アルキレン基(直鎖状若しくは分岐鎖状。好ましくは炭素数1~5)、非芳香族性環基、又は、芳香環基、又はこれらの2つ以上を組み合わせてなる基を表す。 In the general formula (A6),
X Q6 represents a hydrogen atom, a halogen atom, or a monovalent organic group (preferably a methyl group).
RQ6 represents an alkylene group (linear or branched chain, preferably 1 to 5 carbon atoms), a non-aromatic ring group, an aromatic ring group, or a group composed of a combination of two or more of these. ..
XQ6は、水素原子、ハロゲン原子、又は1価の有機基(好ましくはメチル基)を表す。
RQ6は、アルキレン基(直鎖状若しくは分岐鎖状。好ましくは炭素数1~5)、非芳香族性環基、又は、芳香環基、又はこれらの2つ以上を組み合わせてなる基を表す。 In the general formula (A6),
X Q6 represents a hydrogen atom, a halogen atom, or a monovalent organic group (preferably a methyl group).
RQ6 represents an alkylene group (linear or branched chain, preferably 1 to 5 carbon atoms), a non-aromatic ring group, an aromatic ring group, or a group composed of a combination of two or more of these. ..
上記非芳香族性環基としては、例えば、単環式炭化水素環基及び多環式炭化水素環基が挙げられる。
単環式炭化水素環基としては、例えば、炭素数3~12(好ましくは炭素数3~7)のシクロアルカン環基、及び、炭素数3~12のシクロアルケン環基が挙げられる。
多環式炭化水素環基としては、例えば、環集合炭化水素環基及び架橋環式炭化水素環基が挙げられる。
架橋環式炭化水素環としては、例えば、2環式炭化水素環、3環式炭化水素環、及び、4環式炭化水素環等が挙げられる。また、架橋環式炭化水素環は、5~8員シクロアルカン環が複数個縮合した縮合環でもよい。
架橋環式炭化水素環基は、ノルボルナン環基、アダマンタン環基、ビシクロオクタン環基、又は、トリシクロ[5、2、1、02,6]デカン環基が好ましい。 Examples of the non-aromatic ring group include a monocyclic hydrocarbon ring group and a polycyclic hydrocarbon ring group.
Examples of the monocyclic hydrocarbon ring group include a cycloalkane ring group having 3 to 12 carbon atoms (preferably 3 to 7 carbon atoms) and a cycloalkene ring group having 3 to 12 carbon atoms.
Examples of the polycyclic hydrocarbon ring group include a ring-assembled hydrocarbon ring group and a crosslinked ring-type hydrocarbon ring group.
Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, a tetracyclic hydrocarbon ring and the like. Further, the crosslinked cyclic hydrocarbon ring may be a condensed ring in which a plurality of 5- to 8-membered cycloalkane rings are condensed.
The crosslinked cyclic hydrocarbon ring group is preferably a norbornane ring group, an adamantane ring group, a bicyclooctane ring group, or a tricyclo [5, 2, 1, 02, 6] decane ring group.
単環式炭化水素環基としては、例えば、炭素数3~12(好ましくは炭素数3~7)のシクロアルカン環基、及び、炭素数3~12のシクロアルケン環基が挙げられる。
多環式炭化水素環基としては、例えば、環集合炭化水素環基及び架橋環式炭化水素環基が挙げられる。
架橋環式炭化水素環としては、例えば、2環式炭化水素環、3環式炭化水素環、及び、4環式炭化水素環等が挙げられる。また、架橋環式炭化水素環は、5~8員シクロアルカン環が複数個縮合した縮合環でもよい。
架橋環式炭化水素環基は、ノルボルナン環基、アダマンタン環基、ビシクロオクタン環基、又は、トリシクロ[5、2、1、02,6]デカン環基が好ましい。 Examples of the non-aromatic ring group include a monocyclic hydrocarbon ring group and a polycyclic hydrocarbon ring group.
Examples of the monocyclic hydrocarbon ring group include a cycloalkane ring group having 3 to 12 carbon atoms (preferably 3 to 7 carbon atoms) and a cycloalkene ring group having 3 to 12 carbon atoms.
Examples of the polycyclic hydrocarbon ring group include a ring-assembled hydrocarbon ring group and a crosslinked ring-type hydrocarbon ring group.
Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring, a tricyclic hydrocarbon ring, a tetracyclic hydrocarbon ring and the like. Further, the crosslinked cyclic hydrocarbon ring may be a condensed ring in which a plurality of 5- to 8-membered cycloalkane rings are condensed.
The crosslinked cyclic hydrocarbon ring group is preferably a norbornane ring group, an adamantane ring group, a bicyclooctane ring group, or a tricyclo [5, 2, 1, 02, 6] decane ring group.
上記芳香環基は、炭素数6~18の芳香環基が好ましく、ベンゼン環基、ナフタレン環基、アントラセン環基、又は、ビフェニレン環基がより好ましい。
The aromatic ring group preferably has an aromatic ring group having 6 to 18 carbon atoms, and more preferably a benzene ring group, a naphthalene ring group, an anthracene ring group, or a biphenylene ring group.
上記アルキレン基、上記非芳香族性環基、及び、上記芳香環基は、-(-C(CF3)2OH)q6以外の置換基を有さないのも好ましい
It is also preferable that the alkylene group, the non-aromatic ring group, and the aromatic ring group do not have a substituent other than − (−C (CF 3 ) 2 OH) q6.
一般式(A6)中、q6は、1~5の整数を表す。
In the general formula (A6), q6 represents an integer from 1 to 5.
樹脂(A)が水酸基を有する繰り返し単位を有する場合、その含有量は、樹脂(A)の全繰り返し単位に対して、1~60モル%が好ましく、5~50モル%がより好ましく、7~45モル%が更に好ましい。
水酸基を有する繰り返し単位は1種単独で使用してもよく、2種以上を使用してもよい。 When the resin (A) has a repeating unit having a hydroxyl group, the content thereof is preferably 1 to 60 mol%, more preferably 5 to 50 mol%, and 7 to 7 to all the repeating units of the resin (A). 45 mol% is more preferred.
The repeating unit having a hydroxyl group may be used alone or in combination of two or more.
水酸基を有する繰り返し単位は1種単独で使用してもよく、2種以上を使用してもよい。 When the resin (A) has a repeating unit having a hydroxyl group, the content thereof is preferably 1 to 60 mol%, more preferably 5 to 50 mol%, and 7 to 7 to all the repeating units of the resin (A). 45 mol% is more preferred.
The repeating unit having a hydroxyl group may be used alone or in combination of two or more.
フェノール性水酸基を有する繰り返し単位としては、下記の一般式(B2)で表されるフェノール性水酸基を有する繰り返し単位であることが好ましい。
The repeating unit having a phenolic hydroxyl group is preferably a repeating unit having a phenolic hydroxyl group represented by the following general formula (B2).
一般式(B2)中、Xは、水素原子、アルキル基、又はハロゲン原子を表す。
上記アルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は1~10が好ましい。
上記アルキル基の置換基は水酸基又はハロゲン原子が好ましい。上記アルキル基が置換基を有する場合、置換基として水酸基及び/又はハロゲン原子のみを有することが好ましい。上記アルキル基は-CH3が好ましい。 In the general formula (B2), X represents a hydrogen atom, an alkyl group, or a halogen atom.
The alkyl group may be linear or branched. The alkyl group preferably has 1 to 10 carbon atoms.
The substituent of the alkyl group is preferably a hydroxyl group or a halogen atom. When the alkyl group has a substituent, it is preferable that the alkyl group has only a hydroxyl group and / or a halogen atom as the substituent. The alkyl group is preferably -CH 3.
上記アルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は1~10が好ましい。
上記アルキル基の置換基は水酸基又はハロゲン原子が好ましい。上記アルキル基が置換基を有する場合、置換基として水酸基及び/又はハロゲン原子のみを有することが好ましい。上記アルキル基は-CH3が好ましい。 In the general formula (B2), X represents a hydrogen atom, an alkyl group, or a halogen atom.
The alkyl group may be linear or branched. The alkyl group preferably has 1 to 10 carbon atoms.
The substituent of the alkyl group is preferably a hydroxyl group or a halogen atom. When the alkyl group has a substituent, it is preferable that the alkyl group has only a hydroxyl group and / or a halogen atom as the substituent. The alkyl group is preferably -CH 3.
一般式(B2)中、X4は、単結合、-COO-、又は-CONR64-を表し、R64は、水素原子又はアルキル基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~5)を表す。-COO-におけるカルボニル炭素は、繰り返し単位の主鎖に直接結合していることが好ましい。
In the general formula (B2), X 4 represents a single bond, -COO-, or -CONR 64- , and R 64 is a hydrogen atom or an alkyl group (which may be linear or branched, preferably having a number of carbon atoms). Represents 1 to 5). The carbonyl carbon in -COO- is preferably directly attached to the main chain of the repeating unit.
一般式(B2)中、L4は、単結合又はアルキレン基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~20)を表す。
In the general formula (B2), L 4 represents a single bond or an alkylene group (which may be linear or branched, preferably having 1 to 20 carbon atoms).
一般式(B2)中、Ar4は、(n+1)価の芳香環基を表す。上記芳香環基は、ベンゼン環基、ナフタレン環基、及び、アントラセン環基等の炭素数6~18のアリーレン基、又は、チオフェン環基、フラン環基、ピロール環基、ベンゾチオフェン環基、ベンゾフラン環基、ベンゾピロール環基、トリアジン環基、イミダゾール環基、ベンゾイミダゾール環基、トリアゾール環基、チアジアゾール環基、及び、チアゾール環基等のヘテロ環を含む芳香環基が好ましく、ベンゼン環基がより好ましい。
In the general formula (B2), Ar 4 represents an (n + 1) -valent aromatic ring group. The aromatic ring group is an arylene group having 6 to 18 carbon atoms such as a benzene ring group, a naphthalene ring group, and an anthracene ring group, or a thiophene ring group, a furan ring group, a pyrrole ring group, a benzothiophene ring group, and a benzofuran. Aromatic ring groups containing heterocycles such as a ring group, a benzopyrol ring group, a triazine ring group, an imidazole ring group, a benzoimidazole ring group, a triazole ring group, a thiadiazol ring group, and a thiazole ring group are preferable, and a benzene ring group is preferable. More preferred.
一般式(B2)中、nは、1~5の整数を表す。(n+1)価の芳香環基は、更に置換基を有していてもよい。
In the general formula (B2), n represents an integer from 1 to 5. The (n + 1) -valent aromatic ring group may further have a substituent.
上述したR64のアルキル基、L4のアルキレン基、及び、Ar4の(n+1)価の芳香環基が有し得る置換基としては、例えば、ハロゲン原子(好ましくはフッ素原子)、メトキシ基、エトキシ基、ヒドロキシエトキシ基、プロポキシ基、ヒドロキシプロポキシ基、及び、ブトキシ基等のアルコキシ基;フェニル基等のアリール基;等が挙げられる。また、Ar4の(n+1)価の芳香環基が有し得る置換基としては、例えば、アルキル基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~20)も挙げられる。
Examples of the substituent that the above-mentioned alkyl group of R 64 , alkylene group of L 4 and Ar 4 (n + 1) -valent aromatic ring group can have include a halogen atom (preferably a fluorine atom) and a methoxy group. Examples thereof include an alkoxy group such as an ethoxy group, a hydroxyethoxy group, a propoxy group, a hydroxypropoxy group, and a butoxy group; an aryl group such as a phenyl group; and the like. Further , examples of the substituent that the (n + 1) -valent aromatic ring group of Ar 4 can have include an alkyl group (which may be linear or branched, preferably having 1 to 20 carbon atoms).
水酸基を有する繰り返し単位の具体例として、国際公開第2018/193954号の段落[0068]~[0072]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。また、本発明の樹脂(A)は上記以外の水酸基を有する繰り返し単位を有していてもよい。上記以外の水酸基を有する繰り返し単位の具体例を以下に示すが、本発明はこれらに限定されるものではない。ただし、以下の具体例は、原料モノマーとしての構造を示したものである。
As a specific example of the repeating unit having a hydroxyl group, the description in paragraphs [0068] to [0072] of International Publication No. 2018/193954 can be taken into consideration, and these contents are incorporated in the present specification. Further, the resin (A) of the present invention may have a repeating unit having a hydroxyl group other than the above. Specific examples of the repeating unit having a hydroxyl group other than the above are shown below, but the present invention is not limited thereto. However, the following specific examples show the structure as a raw material monomer.
繰り返し単位(1c)は、米国特許出願公開2016/0070167A1号明細書の段落[0370]~[0433]に記載の繰り返し単位であることも好ましい。
It is also preferable that the repeating unit (1c) is the repeating unit described in paragraphs [0370] to [0433] of the US Patent Application Publication No. 2016/0070167A1.
樹脂(A)が繰り返し単位(1c)を含む場合、樹脂(A)に含まれる繰り返し単位(1c)の種類は1種でも2種以上でもよい。
When the resin (A) contains a repeating unit (1c), the type of the repeating unit (1c) contained in the resin (A) may be one or more.
樹脂(A)が繰り返し単位(1c)を含む場合、樹脂(A)に含まれる繰り返し単位(1c)の含有量(繰り返し単位(1c)が複数存在する場合はその合計の含有量)は、樹脂(A)中の全繰り返し単位に対して、5~50質量%であることが好ましく、10~45質量%であることがより好ましく、10~40質量%であることが更に好ましい。
When the resin (A) contains the repeating unit (1c), the content of the repeating unit (1c) contained in the resin (A) (if there are a plurality of repeating units (1c), the total content thereof) is the resin. It is preferably 5 to 50% by mass, more preferably 10 to 45% by mass, and even more preferably 10 to 40% by mass with respect to all the repeating units in (A).
<その他の繰り返し単位>
その他、樹脂(A)は、その他の繰り返し単位を更に含んでいてもよい。
その他の繰り返し単位としては、国際公開第2018/193954号の段落[0122]~[0133]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 <Other repeating units>
In addition, the resin (A) may further contain other repeating units.
As other repeating units, the description in paragraphs [0122] to [0133] of International Publication No. 2018/193954 can be referred to, and these contents are incorporated in the present specification.
その他、樹脂(A)は、その他の繰り返し単位を更に含んでいてもよい。
その他の繰り返し単位としては、国際公開第2018/193954号の段落[0122]~[0133]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 <Other repeating units>
In addition, the resin (A) may further contain other repeating units.
As other repeating units, the description in paragraphs [0122] to [0133] of International Publication No. 2018/193954 can be referred to, and these contents are incorporated in the present specification.
樹脂(A)は、本発明の効果を阻害しない範囲において、その他の繰り返し単位として、上記以外の繰り返し単位を含んでいてもよく、例えば、光酸発生基を有する繰り返し単位を有していてもよい。
光酸発生基を有する繰り返し単位としては、特開2014-41327号公報の段落[0090]~[0106]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 The resin (A) may contain a repeating unit other than the above as the other repeating unit as long as the effect of the present invention is not impaired. For example, the resin (A) may have a repeating unit having a photoacid generating group. good.
As the repeating unit having a photoacid generating group, the description in paragraphs [0090] to [0106] of JP-A-2014-413327 can be referred to, and these contents are incorporated in the present specification.
光酸発生基を有する繰り返し単位としては、特開2014-41327号公報の段落[0090]~[0106]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 The resin (A) may contain a repeating unit other than the above as the other repeating unit as long as the effect of the present invention is not impaired. For example, the resin (A) may have a repeating unit having a photoacid generating group. good.
As the repeating unit having a photoacid generating group, the description in paragraphs [0090] to [0106] of JP-A-2014-413327 can be referred to, and these contents are incorporated in the present specification.
樹脂(A)は、スルトン構造を有する繰り返し単位を更に含んでいてもよい。
The resin (A) may further contain a repeating unit having a sultone structure.
スルトン構造はスルトン環を有していればよく、5~7員環のスルトン環を有するスルトン構造が好ましい。
ビシクロ構造又はスピロ構造を形成する形で5~7員環スルトン環に他の環が縮環しているスルトン構造も好ましい。 The sultone structure may have a sultone ring, and a sultone structure having a 5- to 7-membered sultone ring is preferable.
A sultone structure in which another ring is condensed into a 5- to 7-membered sultone ring in the form of forming a bicyclo structure or a spiro structure is also preferable.
ビシクロ構造又はスピロ構造を形成する形で5~7員環スルトン環に他の環が縮環しているスルトン構造も好ましい。 The sultone structure may have a sultone ring, and a sultone structure having a 5- to 7-membered sultone ring is preferable.
A sultone structure in which another ring is condensed into a 5- to 7-membered sultone ring in the form of forming a bicyclo structure or a spiro structure is also preferable.
なかでも、下記一般式(SL1-1)~(SL1-3)のいずれかで表されるスルトン構造を有する繰り返し単位を含むことが好ましい。また、スルトン構造が主鎖に直接結合していてもよい。
なかでも、一般式(SL1-1)で表されるスルトン構造が好ましい。 Among them, it is preferable to include a repeating unit having a sultone structure represented by any of the following general formulas (SL1-1) to (SL1-3). Further, the sultone structure may be directly bonded to the main chain.
Of these, the sultone structure represented by the general formula (SL1-1) is preferable.
なかでも、一般式(SL1-1)で表されるスルトン構造が好ましい。 Among them, it is preferable to include a repeating unit having a sultone structure represented by any of the following general formulas (SL1-1) to (SL1-3). Further, the sultone structure may be directly bonded to the main chain.
Of these, the sultone structure represented by the general formula (SL1-1) is preferable.
スルトン構造は、置換基(Rb2)を有していても、有していなくてもよい。置換基(Rb2)としては、炭素数1~8のアルキル基、炭素数4~7のシクロアルキル基、炭素数1~8のアルコキシ基、炭素数2~8のアルコキシカルボニル基、カルボキシ基、ハロゲン原子、水酸基、又はシアノ基等が好ましく、炭素数1~4のアルキル基、又はシアノ基がより好ましい。n2は、0~4の整数を表す。n2が2以上の場合、複数存在する置換基(Rb2)は、同一でも異なっていてもよい。また、複数存在する置換基(Rb2)同士が結合して環を形成してもよい。
The sultone structure may or may not have a substituent (Rb 2). Examples of the substituent (Rb 2 ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 2 to 8 carbon atoms, and a carboxy group. A halogen atom, a hydroxyl group, a cyano group or the like is preferable, and an alkyl group having 1 to 4 carbon atoms or a cyano group is more preferable. n 2 represents an integer from 0 to 4. When n 2 is 2 or more, the plurality of substituents (Rb 2 ) may be the same or different. Further, a plurality of existing substituents (Rb 2 ) may be bonded to each other to form a ring.
樹脂(A)がスルトン構造を有する繰り返し単位を含む場合、その含有量は、樹脂(A)の全繰り返し単位に対して、1~50質量%が好ましく、3~40質量%がより好ましく、5~30質量%が更に好ましい。
When the resin (A) contains a repeating unit having a sultone structure, the content thereof is preferably 1 to 50% by mass, more preferably 3 to 40% by mass, based on all the repeating units of the resin (A). It is more preferably to 30% by mass.
樹脂(A)は、更に上記以外のその他の繰り返し単位を有していてもよい。
The resin (A) may further have other repeating units other than the above.
樹脂(A)は、常法に従って(例えばラジカル重合)合成できる。
GPC法によりポリスチレン換算値として、樹脂(A)の重量平均分子量は、1,000~200,000が好ましく、3,000~20,000がより好ましく、4,500~15,000が更に好ましい。樹脂(A)の重量平均分子量を、1,000~200,000とすれば、耐熱性及びドライエッチング耐性の劣化を防ぐことができ、更に、現像性の劣化、及び、粘度が高くなって製膜性が劣化することを防げる。
樹脂(A)の分散度(分子量分布)は、通常1~5であり、1~3が好ましく、1.2~3.0がより好ましく、1.2~2.0が更に好ましい。分散度が小さいものほど、解像度、及び、レジスト形状が優れ、更に、レジストパターンの側壁がスムーズであり、ラフネス性に優れる。 The resin (A) can be synthesized according to a conventional method (for example, radical polymerization).
As a polystyrene conversion value by the GPC method, the weight average molecular weight of the resin (A) is preferably 1,000 to 200,000, more preferably 3,000 to 20,000, and even more preferably 4,500 to 15,000. When the weight average molecular weight of the resin (A) is set to 1,000 to 200,000, deterioration of heat resistance and dry etching resistance can be prevented, and further, deterioration of developability and high viscosity can be prevented. It is possible to prevent the film property from deteriorating.
The dispersity (molecular weight distribution) of the resin (A) is usually 1 to 5, preferably 1 to 3, more preferably 1.2 to 3.0, and even more preferably 1.2 to 2.0. The smaller the degree of dispersion, the better the resolution and the resist shape, the smoother the side wall of the resist pattern, and the better the roughness.
GPC法によりポリスチレン換算値として、樹脂(A)の重量平均分子量は、1,000~200,000が好ましく、3,000~20,000がより好ましく、4,500~15,000が更に好ましい。樹脂(A)の重量平均分子量を、1,000~200,000とすれば、耐熱性及びドライエッチング耐性の劣化を防ぐことができ、更に、現像性の劣化、及び、粘度が高くなって製膜性が劣化することを防げる。
樹脂(A)の分散度(分子量分布)は、通常1~5であり、1~3が好ましく、1.2~3.0がより好ましく、1.2~2.0が更に好ましい。分散度が小さいものほど、解像度、及び、レジスト形状が優れ、更に、レジストパターンの側壁がスムーズであり、ラフネス性に優れる。 The resin (A) can be synthesized according to a conventional method (for example, radical polymerization).
As a polystyrene conversion value by the GPC method, the weight average molecular weight of the resin (A) is preferably 1,000 to 200,000, more preferably 3,000 to 20,000, and even more preferably 4,500 to 15,000. When the weight average molecular weight of the resin (A) is set to 1,000 to 200,000, deterioration of heat resistance and dry etching resistance can be prevented, and further, deterioration of developability and high viscosity can be prevented. It is possible to prevent the film property from deteriorating.
The dispersity (molecular weight distribution) of the resin (A) is usually 1 to 5, preferably 1 to 3, more preferably 1.2 to 3.0, and even more preferably 1.2 to 2.0. The smaller the degree of dispersion, the better the resolution and the resist shape, the smoother the side wall of the resist pattern, and the better the roughness.
本発明の組成物における樹脂(A)の含有量は、本発明の組成物中の全固形分に対して、50~99.9質量%であることが好ましく、60~99.0質量%であることがより好ましい。また、樹脂(A)は、1種で使用してもよいし、2種以上使用してもよい。なお、固形分とは、溶剤以外の成分を意味する。
The content of the resin (A) in the composition of the present invention is preferably 50 to 99.9% by mass, preferably 60 to 99.0% by mass, based on the total solid content in the composition of the present invention. More preferably. Further, the resin (A) may be used alone or in combination of two or more. The solid content means a component other than the solvent.
〔活性光線又は放射線の照射により酸を発生する化合物(B)〕
本発明の組成物は、活性光線又は放射線の照射により酸を発生する化合物(B)(光酸発生剤ともいう)を含む。光酸発生剤は、露光(好ましくは、電子線(EB)、EUVの露光)により酸を発生する化合物である。
光酸発生剤は、低分子化合物の形態であってもよく、重合体の一部に組み込まれた形態であってもよい。また、低分子化合物の形態と重合体の一部に組み込まれた形態を併用してもよい。
光酸発生剤が、低分子化合物の形態である場合、分子量は3000以下が好ましく、2000以下がより好ましく、1000以下が更に好ましい。
光酸発生剤が、重合体の一部に組み込まれた形態である場合、樹脂(A)の一部に組み込まれてもよく、樹脂(A)とは異なる樹脂に組み込まれてもよい。
本発明において、光酸発生剤が、低分子化合物の形態であることが好ましい。
光酸発生剤は特に限定されず、中でも、電子線(EB)、EUVの照射により、有機酸を発生する化合物が好ましく、分子中にフッ素原子又はヨウ素原子を有する光酸発生剤がより好ましい。
上記有機酸として、例えば、スルホン酸(脂肪族スルホン酸、芳香族スルホン酸、及び、カンファースルホン酸等)、カルボン酸(脂肪族カルボン酸、芳香族カルボン酸、及び、アラルキルカルボン酸等)、カルボニルスルホニルイミド酸、ビス(アルキルスルホニル)イミド酸、及び、トリス(アルキルスルホニル)メチド酸等が挙げられる。 [Compound (B) that generates acid by irradiation with active light or radiation]
The composition of the present invention contains a compound (B) (also referred to as a photoacid generator) that generates an acid upon irradiation with active light or radiation. The photoacid generator is a compound that generates an acid by exposure (preferably exposure to electron beam (EB) or EUV).
The photoacid generator may be in the form of a small molecule compound or may be incorporated in a part of the polymer. Further, the form of the small molecule compound and the form incorporated in a part of the polymer may be used in combination.
When the photoacid generator is in the form of a small molecule compound, the molecular weight is preferably 3000 or less, more preferably 2000 or less, still more preferably 1000 or less.
When the photoacid generator is in the form of being incorporated in a part of the polymer, it may be incorporated in a part of the resin (A) or may be incorporated in a resin different from the resin (A).
In the present invention, the photoacid generator is preferably in the form of a small molecule compound.
The photoacid generator is not particularly limited, and among them, a compound that generates an organic acid by irradiation with electron beam (EB) or EUV is preferable, and a photoacid generator having a fluorine atom or an iodine atom in the molecule is more preferable.
Examples of the organic acid include sulfonic acid (aliphatic sulfonic acid, aromatic sulfonic acid, camphor sulfonic acid, etc.), carboxylic acid (aliphatic carboxylic acid, aromatic carboxylic acid, aralkylcarboxylic acid, etc.), and carbonyl. Examples thereof include sulfonylimide acid, bis (alkylsulfonyl) imide acid, and tris (alkylsulfonyl) methidoic acid.
本発明の組成物は、活性光線又は放射線の照射により酸を発生する化合物(B)(光酸発生剤ともいう)を含む。光酸発生剤は、露光(好ましくは、電子線(EB)、EUVの露光)により酸を発生する化合物である。
光酸発生剤は、低分子化合物の形態であってもよく、重合体の一部に組み込まれた形態であってもよい。また、低分子化合物の形態と重合体の一部に組み込まれた形態を併用してもよい。
光酸発生剤が、低分子化合物の形態である場合、分子量は3000以下が好ましく、2000以下がより好ましく、1000以下が更に好ましい。
光酸発生剤が、重合体の一部に組み込まれた形態である場合、樹脂(A)の一部に組み込まれてもよく、樹脂(A)とは異なる樹脂に組み込まれてもよい。
本発明において、光酸発生剤が、低分子化合物の形態であることが好ましい。
光酸発生剤は特に限定されず、中でも、電子線(EB)、EUVの照射により、有機酸を発生する化合物が好ましく、分子中にフッ素原子又はヨウ素原子を有する光酸発生剤がより好ましい。
上記有機酸として、例えば、スルホン酸(脂肪族スルホン酸、芳香族スルホン酸、及び、カンファースルホン酸等)、カルボン酸(脂肪族カルボン酸、芳香族カルボン酸、及び、アラルキルカルボン酸等)、カルボニルスルホニルイミド酸、ビス(アルキルスルホニル)イミド酸、及び、トリス(アルキルスルホニル)メチド酸等が挙げられる。 [Compound (B) that generates acid by irradiation with active light or radiation]
The composition of the present invention contains a compound (B) (also referred to as a photoacid generator) that generates an acid upon irradiation with active light or radiation. The photoacid generator is a compound that generates an acid by exposure (preferably exposure to electron beam (EB) or EUV).
The photoacid generator may be in the form of a small molecule compound or may be incorporated in a part of the polymer. Further, the form of the small molecule compound and the form incorporated in a part of the polymer may be used in combination.
When the photoacid generator is in the form of a small molecule compound, the molecular weight is preferably 3000 or less, more preferably 2000 or less, still more preferably 1000 or less.
When the photoacid generator is in the form of being incorporated in a part of the polymer, it may be incorporated in a part of the resin (A) or may be incorporated in a resin different from the resin (A).
In the present invention, the photoacid generator is preferably in the form of a small molecule compound.
The photoacid generator is not particularly limited, and among them, a compound that generates an organic acid by irradiation with electron beam (EB) or EUV is preferable, and a photoacid generator having a fluorine atom or an iodine atom in the molecule is more preferable.
Examples of the organic acid include sulfonic acid (aliphatic sulfonic acid, aromatic sulfonic acid, camphor sulfonic acid, etc.), carboxylic acid (aliphatic carboxylic acid, aromatic carboxylic acid, aralkylcarboxylic acid, etc.), and carbonyl. Examples thereof include sulfonylimide acid, bis (alkylsulfonyl) imide acid, and tris (alkylsulfonyl) methidoic acid.
光酸発生剤より発生する酸に関して、国際公開第2018/193954号の段落[0136]~[0141]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
Regarding the acid generated from the photoacid generator, the description in paragraphs [0136] to [0141] of International Publication No. 2018/193954 can be taken into consideration, and these contents are incorporated in the present specification.
本発明の効果がより優れる点で、光酸発生剤はアニオンとカチオンとを含むイオン性化合物であることが好ましい。
光酸発生剤は、アニオン性分子とカチオン性分子をそれぞれ有するイオン性化合物であってもよく、アニオン部とカチオン部が共有結合で連結した構造のベタイン化合物であってもよい。
光酸発生剤は、アニオン性分子とカチオン性分子をそれぞれ有するイオン性化合物であることがより好ましく、1つ以上のアニオン性分子と1つ以上のカチオン性分子とで構成され、上記カチオン性分子のうち少なくとも1つがフッ素原子を含むことが更に好ましい。
光酸発生剤は、下記一般式(a)~(c)のいずれかで表されることが特に好ましい。一般式(a)~(c)の詳細については後述する。
Ma1 +Aa --La-Ba -Ma2 + (a)
(Mb1 +Ab -)nb-Lb-Bb -Mb2 + (b)
(Mc +Ac -)nc-Lc (c)
一般式(a)中、Ma1 +及びMa2 +は、それぞれ独立に有機カチオンを表し、Laは2価の有機基を表し、Aa -及びBa -は、それぞれ独立にアニオン性官能基を表す。
ただし、一般式(a)で表される化合物のMa1 +及びMa2 +がそれぞれ水素原子で置換されたHAa-La-BaHで表される化合物において、HAaで表される基のpKaはBaHで表される基のpKaよりも小さい。
一般式(b)中、Mb1 +及びMb2 +は、それぞれ独立に有機カチオンを表し、Lbは(nb+1)価の有機基を表し、Ab -及びBb -は、それぞれ独立にアニオン性官能基を表し、nbは2以上の整数を表す。複数のMb1 +及びAb -は、それぞれ同じであっても異なっていてもよい。
ただし、一般式(b)で表される化合物のMb1 +及びMb2 +がそれぞれ水素原子で置換された(HAb)nb-Lb-BbHで表される化合物において、HAbで表される基のpKaはBbHで表される基のpKaよりも小さい。
一般式(c)中、Mc +は有機カチオンを表し、Ac -はアニオン性官能基を表し、Lcは酸を中和可能な非イオン性の有機部位を表し、ncは2以上の整数を表す。複数のMc +及びAc -は、それぞれ同じであっても異なっていてもよい。 The photoacid generator is preferably an ionic compound containing an anion and a cation because the effect of the present invention is more excellent.
The photoacid generator may be an ionic compound having an anionic molecule and a cationic molecule, respectively, or may be a betaine compound having a structure in which an anionic portion and a cationic portion are covalently linked.
The photoacid generator is more preferably an ionic compound having an anionic molecule and a cationic molecule, respectively, and is composed of one or more anionic molecules and one or more cationic molecules, and is composed of the above-mentioned cationic molecule. It is more preferable that at least one of them contains a fluorine atom.
The photoacid generator is particularly preferably represented by any of the following general formulas (a) to (c). Details of the general formulas (a) to (c) will be described later.
M a1 + A a - -L a -B a - M a2 + (a)
(M b1 + A b -) nb -L b -B b - M b2 + (b)
(M c + A c -) nc -L c (c)
In the general formula (a), M a1 + and M a2 + each independently represent an organic cation, L a represents a divalent organic group, A a - and B a - are each independently an anionic functional Represents a group.
However, in the general formula (a) HA a -L a -B represented by a H compound M a1 + and M a2 + is substituted with a hydrogen atom each of the compounds represented by the represented by HA a pKa groups is less than the pKa of the groups represented by B a H.
In the general formula (b), M b1 + and M b2 + each independently represent an organic cation, L b represents a (nb + 1) -valent organic group, and Ab − and B b − each independently represent an anion. It represents a sex functional group, and nb represents an integer of 2 or more. The plurality of M b1 + and Ab − may be the same or different from each other.
However, in the general formula (b) M b1 + and M b2 + of the compound represented by is substituted with hydrogen atoms, respectively (HA b) a compound represented by nb -L b -B b H, in HA b The pKa of the group represented is smaller than the pKa of the group represented by B b H.
In the general formula (c), Mc + represents an organic cation, Ac − represents an anionic functional group, L c represents a nonionic organic moiety capable of neutralizing an acid, and nc represents 2 or more. Represents an integer. The plurality of Mc + and Ac − may be the same or different from each other.
光酸発生剤は、アニオン性分子とカチオン性分子をそれぞれ有するイオン性化合物であってもよく、アニオン部とカチオン部が共有結合で連結した構造のベタイン化合物であってもよい。
光酸発生剤は、アニオン性分子とカチオン性分子をそれぞれ有するイオン性化合物であることがより好ましく、1つ以上のアニオン性分子と1つ以上のカチオン性分子とで構成され、上記カチオン性分子のうち少なくとも1つがフッ素原子を含むことが更に好ましい。
光酸発生剤は、下記一般式(a)~(c)のいずれかで表されることが特に好ましい。一般式(a)~(c)の詳細については後述する。
Ma1 +Aa --La-Ba -Ma2 + (a)
(Mb1 +Ab -)nb-Lb-Bb -Mb2 + (b)
(Mc +Ac -)nc-Lc (c)
一般式(a)中、Ma1 +及びMa2 +は、それぞれ独立に有機カチオンを表し、Laは2価の有機基を表し、Aa -及びBa -は、それぞれ独立にアニオン性官能基を表す。
ただし、一般式(a)で表される化合物のMa1 +及びMa2 +がそれぞれ水素原子で置換されたHAa-La-BaHで表される化合物において、HAaで表される基のpKaはBaHで表される基のpKaよりも小さい。
一般式(b)中、Mb1 +及びMb2 +は、それぞれ独立に有機カチオンを表し、Lbは(nb+1)価の有機基を表し、Ab -及びBb -は、それぞれ独立にアニオン性官能基を表し、nbは2以上の整数を表す。複数のMb1 +及びAb -は、それぞれ同じであっても異なっていてもよい。
ただし、一般式(b)で表される化合物のMb1 +及びMb2 +がそれぞれ水素原子で置換された(HAb)nb-Lb-BbHで表される化合物において、HAbで表される基のpKaはBbHで表される基のpKaよりも小さい。
一般式(c)中、Mc +は有機カチオンを表し、Ac -はアニオン性官能基を表し、Lcは酸を中和可能な非イオン性の有機部位を表し、ncは2以上の整数を表す。複数のMc +及びAc -は、それぞれ同じであっても異なっていてもよい。 The photoacid generator is preferably an ionic compound containing an anion and a cation because the effect of the present invention is more excellent.
The photoacid generator may be an ionic compound having an anionic molecule and a cationic molecule, respectively, or may be a betaine compound having a structure in which an anionic portion and a cationic portion are covalently linked.
The photoacid generator is more preferably an ionic compound having an anionic molecule and a cationic molecule, respectively, and is composed of one or more anionic molecules and one or more cationic molecules, and is composed of the above-mentioned cationic molecule. It is more preferable that at least one of them contains a fluorine atom.
The photoacid generator is particularly preferably represented by any of the following general formulas (a) to (c). Details of the general formulas (a) to (c) will be described later.
M a1 + A a - -L a -B a - M a2 + (a)
(M b1 + A b -) nb -L b -B b - M b2 + (b)
(M c + A c -) nc -L c (c)
In the general formula (a), M a1 + and M a2 + each independently represent an organic cation, L a represents a divalent organic group, A a - and B a - are each independently an anionic functional Represents a group.
However, in the general formula (a) HA a -L a -B represented by a H compound M a1 + and M a2 + is substituted with a hydrogen atom each of the compounds represented by the represented by HA a pKa groups is less than the pKa of the groups represented by B a H.
In the general formula (b), M b1 + and M b2 + each independently represent an organic cation, L b represents a (nb + 1) -valent organic group, and Ab − and B b − each independently represent an anion. It represents a sex functional group, and nb represents an integer of 2 or more. The plurality of M b1 + and Ab − may be the same or different from each other.
However, in the general formula (b) M b1 + and M b2 + of the compound represented by is substituted with hydrogen atoms, respectively (HA b) a compound represented by nb -L b -B b H, in HA b The pKa of the group represented is smaller than the pKa of the group represented by B b H.
In the general formula (c), Mc + represents an organic cation, Ac − represents an anionic functional group, L c represents a nonionic organic moiety capable of neutralizing an acid, and nc represents 2 or more. Represents an integer. The plurality of Mc + and Ac − may be the same or different from each other.
<一般式(PA-1)で表される化合物>
光酸発生剤は下記一般式(PA-1)で表される化合物であることが好ましい。 <Compound represented by the general formula (PA-1)>
The photoacid generator is preferably a compound represented by the following general formula (PA-1).
光酸発生剤は下記一般式(PA-1)で表される化合物であることが好ましい。 <Compound represented by the general formula (PA-1)>
The photoacid generator is preferably a compound represented by the following general formula (PA-1).
一般式(PA-1)中、A1及びA2は、それぞれ独立に、-SO2-RP、又は、-CO-RPを表す。RPは、有機基を表す。
一般式(PA-1)中に2つ存在するRPは同一でも異なっていてもよい。
一般式(PA-1)中に2つ存在するRPの炭素数は、それぞれ独立に、1~25が好ましく、1~15がより好ましい。
一般式(PA-1)中に2つ存在するRPの水素原子を除く原子の数は、それぞれ独立に、2~30が好ましく、4~20がより好ましい。
RPは、一般式(RF)で表される基が好ましい。
-LRF-RRF (RF) In formula (PA-1), A 1 and A 2 are each independently, -SO 2 -R P, or represents -CO-R P. R P represents an organic group.
R P present two in the general formula (PA-1) may be the same or different.
Formula number of carbon atoms in R P present two to (PA-1) in each independently, preferably 1 to 25, more preferably from 1 to 15.
The number of the general formula (PA-1) atoms excluding two hydrogen atoms of the present R P during each independently 2 to 30, and more preferably from 4 to 20.
R P is a group represented by the general formula (RF) is preferred.
-L RF- R RF (RF)
一般式(PA-1)中に2つ存在するRPは同一でも異なっていてもよい。
一般式(PA-1)中に2つ存在するRPの炭素数は、それぞれ独立に、1~25が好ましく、1~15がより好ましい。
一般式(PA-1)中に2つ存在するRPの水素原子を除く原子の数は、それぞれ独立に、2~30が好ましく、4~20がより好ましい。
RPは、一般式(RF)で表される基が好ましい。
-LRF-RRF (RF) In formula (PA-1), A 1 and A 2 are each independently, -SO 2 -R P, or represents -CO-R P. R P represents an organic group.
R P present two in the general formula (PA-1) may be the same or different.
Formula number of carbon atoms in R P present two to (PA-1) in each independently, preferably 1 to 25, more preferably from 1 to 15.
The number of the general formula (PA-1) atoms excluding two hydrogen atoms of the present R P during each independently 2 to 30, and more preferably from 4 to 20.
R P is a group represented by the general formula (RF) is preferred.
-L RF- R RF (RF)
一般式(RF)中、LRFは、単結合又は2価の連結基を表す。
上記2価の連結基としては、例えば、-COO-、-CONH-、-CO-、-O-、-S-、-SO-、-SO2-、アルキレン基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~6)、シクロアルキレン基(好ましくは炭素数3~15)、アルケニレン基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数2~6)、及び、これらの複数を組み合わせた2価の連結基等が挙げられる。
またこれらの2価の連結基が可能な場合に有し得る置換基は、ハロゲン原子が好ましく、フッ素原子がより好ましい。例えば、上記アルキレン基(複数を組み合わせた2価の連結基に含まれ得るアルキレン基も含む)がパーフルオロアルキレン基になっているのも好ましい。
上記2価の連結基は、-アルキレン基-COO-又は-アルキレン基-SO2-が好ましい。-アルキレン基-COO-及び-アルキレン基-SO2-は、アルキレン基がN-側に存在することが好ましい。 In the general formula (RF), LRF represents a single bond or a divalent linking group.
Examples of the divalent linking group include -COO-, -CONH-, -CO-, -O-, -S-, -SO-, -SO 2- , and an alkylene group (linear or branched chain). It may be preferably 1 to 6 carbon atoms), a cycloalkylene group (preferably 3 to 15 carbon atoms), an alkaneylene group (linear or branched chain, preferably 2 to 6 carbon atoms), and these. A divalent linking group obtained by combining a plurality of the above can be mentioned.
Further, as the substituent that can be possessed when these divalent linking groups are possible, a halogen atom is preferable, and a fluorine atom is more preferable. For example, it is also preferable that the alkylene group (including an alkylene group that can be contained in a divalent linking group in which a plurality of them are combined) is a perfluoroalkylene group.
The divalent linking group is preferably -alkylene group-COO- or -alkylene group-SO 2- . For the -alkylene group-COO- and the -alkylene group-SO 2- , the alkylene group is preferably present on the N- side.
上記2価の連結基としては、例えば、-COO-、-CONH-、-CO-、-O-、-S-、-SO-、-SO2-、アルキレン基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~6)、シクロアルキレン基(好ましくは炭素数3~15)、アルケニレン基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数2~6)、及び、これらの複数を組み合わせた2価の連結基等が挙げられる。
またこれらの2価の連結基が可能な場合に有し得る置換基は、ハロゲン原子が好ましく、フッ素原子がより好ましい。例えば、上記アルキレン基(複数を組み合わせた2価の連結基に含まれ得るアルキレン基も含む)がパーフルオロアルキレン基になっているのも好ましい。
上記2価の連結基は、-アルキレン基-COO-又は-アルキレン基-SO2-が好ましい。-アルキレン基-COO-及び-アルキレン基-SO2-は、アルキレン基がN-側に存在することが好ましい。 In the general formula (RF), LRF represents a single bond or a divalent linking group.
Examples of the divalent linking group include -COO-, -CONH-, -CO-, -O-, -S-, -SO-, -SO 2- , and an alkylene group (linear or branched chain). It may be preferably 1 to 6 carbon atoms), a cycloalkylene group (preferably 3 to 15 carbon atoms), an alkaneylene group (linear or branched chain, preferably 2 to 6 carbon atoms), and these. A divalent linking group obtained by combining a plurality of the above can be mentioned.
Further, as the substituent that can be possessed when these divalent linking groups are possible, a halogen atom is preferable, and a fluorine atom is more preferable. For example, it is also preferable that the alkylene group (including an alkylene group that can be contained in a divalent linking group in which a plurality of them are combined) is a perfluoroalkylene group.
The divalent linking group is preferably -alkylene group-COO- or -alkylene group-SO 2- . For the -alkylene group-COO- and the -alkylene group-SO 2- , the alkylene group is preferably present on the N- side.
一般式(RF)中、RRFは、シクロアルキル基又はアルキル基を表す。
RRFがシクロアルキル基である場合、上記シクロアルキル基は単環でも多環でもよい。
上記シクロアルキル基の炭素数は、3~15が好ましく、5~10がより好ましい。
上記シクロアルキル基としては、例えば、ノルボルニル基、及び、デカリニル基、アダマンチル基が挙げられる。
上記シクロアルキル基が有してもよい置換基は、アルキル基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~5)が好ましい。上記シクロアルキル基はこれ以外の置換基を有さないのも好ましい。
上記シクロアルキル基の環員原子である炭素原子のうちの1個以上が、カルボニル炭素原子及び/又はヘテロ原子で置き換わっていてもよい。例えば、シクロアルキル基中の、LRFと結合する炭素原子(-CH<)が窒素原子(-N<)で置き換わってもよい。
RRFがアルキル基である場合、上記アルキル基は、直鎖状でも分岐鎖状でもよい。
上記アルキル基の炭素数は1~10が好ましく、1~5がより好ましい。
上記アルキル基が有してもよい置換基は、シクロアルキル基、フッ素原子、又はシアノ基が好ましい。上記アルキル基はこれら以外の置換基を有さないのも好ましい。
上記置換基としてのシクロアルキル基の例としては、例えば、RRFがシクロアルキル基である場合において説明したシクロアルキル基が同様に挙げられる。
上記アルキル基が、上記置換基としてのフッ素原子を有する場合、上記アルキル基は、パーフルオロアルキル基となっていてもよいし、ならなくてもよい。上記アルキル基が、上記置換基としてのフッ素原子を有する場合、上記アルキル基の一部又は全部がパーフルオロメチル基であるのも好ましい。 In the general formula (RF), R RF represents a cycloalkyl group or an alkyl group.
When R RF is a cycloalkyl group, the cycloalkyl group may be monocyclic or polycyclic.
The cycloalkyl group preferably has 3 to 15 carbon atoms, and more preferably 5 to 10 carbon atoms.
Examples of the cycloalkyl group include a norbornyl group, a decalynyl group, and an adamantyl group.
The substituent that the cycloalkyl group may have is preferably an alkyl group (linear or branched chain, preferably 1 to 5 carbon atoms). It is also preferable that the cycloalkyl group does not have any other substituent.
One or more of the carbon atoms which are ring member atoms of the cycloalkyl group may be replaced with carbonyl carbon atoms and / or heteroatoms. For example, the carbon atom (-CH <) bonded to L RF in the cycloalkyl group may be replaced by the nitrogen atom (-N <).
When R RF is an alkyl group, the alkyl group may be linear or branched.
The alkyl group preferably has 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms.
The substituent that the alkyl group may have is preferably a cycloalkyl group, a fluorine atom, or a cyano group. It is also preferable that the above alkyl group has no substituent other than these.
Examples of the cycloalkyl group as the substituent include, for example, the cycloalkyl group described in the case where R RF is a cycloalkyl group.
When the alkyl group has a fluorine atom as the substituent, the alkyl group may or may not be a perfluoroalkyl group. When the alkyl group has a fluorine atom as the substituent, it is also preferable that a part or all of the alkyl group is a perfluoromethyl group.
RRFがシクロアルキル基である場合、上記シクロアルキル基は単環でも多環でもよい。
上記シクロアルキル基の炭素数は、3~15が好ましく、5~10がより好ましい。
上記シクロアルキル基としては、例えば、ノルボルニル基、及び、デカリニル基、アダマンチル基が挙げられる。
上記シクロアルキル基が有してもよい置換基は、アルキル基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~5)が好ましい。上記シクロアルキル基はこれ以外の置換基を有さないのも好ましい。
上記シクロアルキル基の環員原子である炭素原子のうちの1個以上が、カルボニル炭素原子及び/又はヘテロ原子で置き換わっていてもよい。例えば、シクロアルキル基中の、LRFと結合する炭素原子(-CH<)が窒素原子(-N<)で置き換わってもよい。
RRFがアルキル基である場合、上記アルキル基は、直鎖状でも分岐鎖状でもよい。
上記アルキル基の炭素数は1~10が好ましく、1~5がより好ましい。
上記アルキル基が有してもよい置換基は、シクロアルキル基、フッ素原子、又はシアノ基が好ましい。上記アルキル基はこれら以外の置換基を有さないのも好ましい。
上記置換基としてのシクロアルキル基の例としては、例えば、RRFがシクロアルキル基である場合において説明したシクロアルキル基が同様に挙げられる。
上記アルキル基が、上記置換基としてのフッ素原子を有する場合、上記アルキル基は、パーフルオロアルキル基となっていてもよいし、ならなくてもよい。上記アルキル基が、上記置換基としてのフッ素原子を有する場合、上記アルキル基の一部又は全部がパーフルオロメチル基であるのも好ましい。 In the general formula (RF), R RF represents a cycloalkyl group or an alkyl group.
When R RF is a cycloalkyl group, the cycloalkyl group may be monocyclic or polycyclic.
The cycloalkyl group preferably has 3 to 15 carbon atoms, and more preferably 5 to 10 carbon atoms.
Examples of the cycloalkyl group include a norbornyl group, a decalynyl group, and an adamantyl group.
The substituent that the cycloalkyl group may have is preferably an alkyl group (linear or branched chain, preferably 1 to 5 carbon atoms). It is also preferable that the cycloalkyl group does not have any other substituent.
One or more of the carbon atoms which are ring member atoms of the cycloalkyl group may be replaced with carbonyl carbon atoms and / or heteroatoms. For example, the carbon atom (-CH <) bonded to L RF in the cycloalkyl group may be replaced by the nitrogen atom (-N <).
When R RF is an alkyl group, the alkyl group may be linear or branched.
The alkyl group preferably has 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms.
The substituent that the alkyl group may have is preferably a cycloalkyl group, a fluorine atom, or a cyano group. It is also preferable that the above alkyl group has no substituent other than these.
Examples of the cycloalkyl group as the substituent include, for example, the cycloalkyl group described in the case where R RF is a cycloalkyl group.
When the alkyl group has a fluorine atom as the substituent, the alkyl group may or may not be a perfluoroalkyl group. When the alkyl group has a fluorine atom as the substituent, it is also preferable that a part or all of the alkyl group is a perfluoromethyl group.
一般式(PA-1)中、「A1-N--A2」に含まれる二つのRPが互いに結合して環を形成してもよい。
In formula (PA-1), - two R P included in "A 1 -N -A 2 'are bonded to each other may form a ring.
一般式(PA-1)中、M+は、カチオンを表す。
M+のカチオンは、有機カチオンが好ましい。
上記有機カチオンは、それぞれ独立に、一般式(ZaI)で表されるカチオン(カチオン(ZaI))又は一般式(ZaII)で表されるカチオン(カチオン(ZaII))が好ましい。 In the general formula (PA-1), M + represents a cation.
The M + cation is preferably an organic cation.
The organic cations are preferably cations represented by the general formula (ZaI) (cations (ZaI)) or cations represented by the general formula (ZaII) (cations (ZaII)) independently.
M+のカチオンは、有機カチオンが好ましい。
上記有機カチオンは、それぞれ独立に、一般式(ZaI)で表されるカチオン(カチオン(ZaI))又は一般式(ZaII)で表されるカチオン(カチオン(ZaII))が好ましい。 In the general formula (PA-1), M + represents a cation.
The M + cation is preferably an organic cation.
The organic cations are preferably cations represented by the general formula (ZaI) (cations (ZaI)) or cations represented by the general formula (ZaII) (cations (ZaII)) independently.
上記一般式(ZaI)において、
R201、R202、及びR203は、それぞれ独立に、有機基を表す。
R201、R202、及びR203としての有機基の炭素数は、通常1~30であり、1~20が好ましい。また、R201~R203のうち2つが結合して環構造を形成してもよく、環内に酸素原子、硫黄原子、エステル基、アミド基、又は、カルボニル基を含んでいてもよい。R201~R203の内の2つが結合して形成する基としては、例えば、アルキレン基(例えば、ブチレン基、ペンチレン基)、及び、-CH2-CH2-O-CH2-CH2-が挙げられる。 In the above general formula (ZaI)
R 201 , R 202 , and R 203 each independently represent an organic group.
The carbon number of the organic group as R 201 , R 202 , and R 203 is usually 1 to 30, preferably 1 to 20. Further, two of R 201 to R 203 may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester group, an amide group, or a carbonyl group. The two of the group formed by bonding of the R 201 ~ R 203, for example, an alkylene group (e.g., butylene, pentylene), and, -CH 2 -CH 2 -O-CH 2 -CH 2 - Can be mentioned.
R201、R202、及びR203は、それぞれ独立に、有機基を表す。
R201、R202、及びR203としての有機基の炭素数は、通常1~30であり、1~20が好ましい。また、R201~R203のうち2つが結合して環構造を形成してもよく、環内に酸素原子、硫黄原子、エステル基、アミド基、又は、カルボニル基を含んでいてもよい。R201~R203の内の2つが結合して形成する基としては、例えば、アルキレン基(例えば、ブチレン基、ペンチレン基)、及び、-CH2-CH2-O-CH2-CH2-が挙げられる。 In the above general formula (ZaI)
R 201 , R 202 , and R 203 each independently represent an organic group.
The carbon number of the organic group as R 201 , R 202 , and R 203 is usually 1 to 30, preferably 1 to 20. Further, two of R 201 to R 203 may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester group, an amide group, or a carbonyl group. The two of the group formed by bonding of the R 201 ~ R 203, for example, an alkylene group (e.g., butylene, pentylene), and, -CH 2 -CH 2 -O-CH 2 -CH 2 - Can be mentioned.
一般式(ZaI)におけるカチオンとしては、例えば、後述する、カチオン(ZaI-1)、カチオン(ZaI-2)、一般式(ZaI-3b)で表されるカチオン(カチオン(ZaI-3b))、及び、一般式(ZaI-4b)で表されるカチオン(カチオン(ZaI-4b))が挙げられる。
Examples of the cation in the general formula (ZaI) include a cation (ZaI-1), a cation (ZaI-2), and a cation represented by the general formula (ZaI-3b) (cation (ZaI-3b)), which will be described later. In addition, a cation represented by the general formula (ZaI-4b) (cation (ZaI-4b)) can be mentioned.
まず、カチオン(ZaI-1)について説明する。
カチオン(ZaI-1)は、上記一般式(ZaI)のR201~R203の少なくとも1つがアリール基である、アリールスルホニウムカチオンである。
アリールスルホニウムカチオンは、R201~R203の全てがアリール基でもよいし、R201~R203の一部がアリール基であり、残りがアルキル基又はシクロアルキル基であってもよい。
また、R201~R203のうちの1つがアリール基であり、R201~R203のうちの残りの2つが結合して環構造を形成してもよく、環内に酸素原子、硫黄原子、エステル基、アミド基、又は、カルボニル基を含んでいてもよい。R201~R203のうちの2つが結合して形成する基としては、例えば、1つ以上のメチレン基が酸素原子、硫黄原子、エステル基、アミド基、及び/又はカルボニル基で置換されていてもよいアルキレン基(例えば、ブチレン基、ペンチレン基、又は-CH2-CH2-O-CH2-CH2-)が挙げられる。
アリールスルホニウムカチオンとしては、例えば、トリアリールスルホニウムカチオン、ジアリールアルキルスルホニウムカチオン、アリールジアルキルスルホニウムカチオン、ジアリールシクロアルキルスルホニウムカチオン、及び、アリールジシクロアルキルスルホニウムカチオンが挙げられる。 First, the cation (ZaI-1) will be described.
The cation (ZaI-1) is an aryl sulfonium cation in which at least one of R 201 to R 203 of the above general formula (ZaI) is an aryl group.
As the aryl sulfonium cation, all of R 201 to R 203 may be an aryl group, or a part of R 201 to R 203 may be an aryl group and the rest may be an alkyl group or a cycloalkyl group.
Further, one of R 201 to R 203 may be an aryl group, and the remaining two of R 201 to R 203 may be bonded to form a ring structure, and an oxygen atom, a sulfur atom, and the like may be formed in the ring. It may contain an ester group, an amide group, or a carbonyl group. As a group formed by bonding two of R 201 to R 203 , for example, one or more methylene groups are substituted with an oxygen atom, a sulfur atom, an ester group, an amide group, and / or a carbonyl group. also an alkylene group (e.g., butylene group, pentylene group, or -CH 2 -CH 2 -O-CH 2 -CH 2 -) and the like.
Examples of the aryl sulfonium cation include a triaryl sulfonium cation, a diallyl alkyl sulfonium cation, an aryl dialkyl sulfonium cation, a diallyl cycloalkyl sulfonium cation, and an aryl dicycloalkyl sulfonium cation.
カチオン(ZaI-1)は、上記一般式(ZaI)のR201~R203の少なくとも1つがアリール基である、アリールスルホニウムカチオンである。
アリールスルホニウムカチオンは、R201~R203の全てがアリール基でもよいし、R201~R203の一部がアリール基であり、残りがアルキル基又はシクロアルキル基であってもよい。
また、R201~R203のうちの1つがアリール基であり、R201~R203のうちの残りの2つが結合して環構造を形成してもよく、環内に酸素原子、硫黄原子、エステル基、アミド基、又は、カルボニル基を含んでいてもよい。R201~R203のうちの2つが結合して形成する基としては、例えば、1つ以上のメチレン基が酸素原子、硫黄原子、エステル基、アミド基、及び/又はカルボニル基で置換されていてもよいアルキレン基(例えば、ブチレン基、ペンチレン基、又は-CH2-CH2-O-CH2-CH2-)が挙げられる。
アリールスルホニウムカチオンとしては、例えば、トリアリールスルホニウムカチオン、ジアリールアルキルスルホニウムカチオン、アリールジアルキルスルホニウムカチオン、ジアリールシクロアルキルスルホニウムカチオン、及び、アリールジシクロアルキルスルホニウムカチオンが挙げられる。 First, the cation (ZaI-1) will be described.
The cation (ZaI-1) is an aryl sulfonium cation in which at least one of R 201 to R 203 of the above general formula (ZaI) is an aryl group.
As the aryl sulfonium cation, all of R 201 to R 203 may be an aryl group, or a part of R 201 to R 203 may be an aryl group and the rest may be an alkyl group or a cycloalkyl group.
Further, one of R 201 to R 203 may be an aryl group, and the remaining two of R 201 to R 203 may be bonded to form a ring structure, and an oxygen atom, a sulfur atom, and the like may be formed in the ring. It may contain an ester group, an amide group, or a carbonyl group. As a group formed by bonding two of R 201 to R 203 , for example, one or more methylene groups are substituted with an oxygen atom, a sulfur atom, an ester group, an amide group, and / or a carbonyl group. also an alkylene group (e.g., butylene group, pentylene group, or -CH 2 -CH 2 -O-CH 2 -CH 2 -) and the like.
Examples of the aryl sulfonium cation include a triaryl sulfonium cation, a diallyl alkyl sulfonium cation, an aryl dialkyl sulfonium cation, a diallyl cycloalkyl sulfonium cation, and an aryl dicycloalkyl sulfonium cation.
アリールスルホニウムカチオンに含まれるアリール基は、フェニル基又はナフチル基が好ましく、フェニル基がより好ましい。アリール基は、酸素原子、窒素原子、又は硫黄原子等を有するヘテロ環構造を有するアリール基であってもよい。ヘテロ環構造としては、例えば、ピロール残基、フラン残基、チオフェン残基、インドール残基、ベンゾフラン残基、及び、ベンゾチオフェン残基等が挙げられる。アリールスルホニウムカチオンが2つ以上のアリール基を有する場合に、2つ以上あるアリール基は同一であっても異なっていてもよい。
アリールスルホニウムカチオンが必要に応じて有しているアルキル基又はシクロアルキル基は、炭素数1~15の直鎖状アルキル基、炭素数3~15の分岐鎖状アルキル基、又は、炭素数3~15のシクロアルキル基が好ましく、例えば、メチル基、エチル基、プロピル基、n-ブチル基、sec-ブチル基、t-ブチル基、シクロプロピル基、シクロブチル基、及び、シクロヘキシル基等が挙げられる。 The aryl group contained in the arylsulfonium cation is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the heterocyclic structure include pyrrole residues, furan residues, thiophene residues, indole residues, benzofuran residues, benzothiophene residues and the like. When the aryl sulfonium cation has two or more aryl groups, the two or more aryl groups may be the same or different.
The alkyl group or cycloalkyl group that the arylsulfonium cation has as needed is a linear alkyl group having 1 to 15 carbon atoms, a branched alkyl group having 3 to 15 carbon atoms, or a branched alkyl group having 3 to 15 carbon atoms. A cycloalkyl group of 15 is preferable, and examples thereof include a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a t-butyl group, a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.
アリールスルホニウムカチオンが必要に応じて有しているアルキル基又はシクロアルキル基は、炭素数1~15の直鎖状アルキル基、炭素数3~15の分岐鎖状アルキル基、又は、炭素数3~15のシクロアルキル基が好ましく、例えば、メチル基、エチル基、プロピル基、n-ブチル基、sec-ブチル基、t-ブチル基、シクロプロピル基、シクロブチル基、及び、シクロヘキシル基等が挙げられる。 The aryl group contained in the arylsulfonium cation is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the heterocyclic structure include pyrrole residues, furan residues, thiophene residues, indole residues, benzofuran residues, benzothiophene residues and the like. When the aryl sulfonium cation has two or more aryl groups, the two or more aryl groups may be the same or different.
The alkyl group or cycloalkyl group that the arylsulfonium cation has as needed is a linear alkyl group having 1 to 15 carbon atoms, a branched alkyl group having 3 to 15 carbon atoms, or a branched alkyl group having 3 to 15 carbon atoms. A cycloalkyl group of 15 is preferable, and examples thereof include a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a t-butyl group, a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.
R201~R203のアリール基、アルキル基、及び、シクロアルキル基が有していてもよい置換基は、それぞれ独立に、アルキル基(例えば炭素数1~15)、シクロアルキル基(例えば炭素数3~15)、アリール基(例えば炭素数6~14)、アルコキシ基(例えば炭素数1~15)、シクロアルキルアルコキシ基(例えば炭素数1~15)、ハロゲン原子、水酸基、又は、フェニルチオ基が好ましい。
上記置換基は可能な場合は更に置換基を有していてもよく、例えば、上記アルキル基が置換基としてハロゲン原子を有して、トリフルオロメチル基等のハロゲン化アルキル基となっていてもよい。 The aryl group, alkyl group, and substituent that the cycloalkyl group of R 201 to R 203 may have are independently an alkyl group (for example, 1 to 15 carbon atoms) and a cycloalkyl group (for example, carbon number of carbon atoms). 3 to 15), aryl group (for example, 6 to 14 carbon atoms), alkoxy group (for example, 1 to 15 carbon atoms), cycloalkyl alkoxy group (for example, 1 to 15 carbon atoms), halogen atom, hydroxyl group, or phenylthio group. preferable.
The substituent may further have a substituent if possible. For example, the alkyl group may have a halogen atom as a substituent and may be an alkyl halide group such as a trifluoromethyl group. good.
上記置換基は可能な場合は更に置換基を有していてもよく、例えば、上記アルキル基が置換基としてハロゲン原子を有して、トリフルオロメチル基等のハロゲン化アルキル基となっていてもよい。 The aryl group, alkyl group, and substituent that the cycloalkyl group of R 201 to R 203 may have are independently an alkyl group (for example, 1 to 15 carbon atoms) and a cycloalkyl group (for example, carbon number of carbon atoms). 3 to 15), aryl group (for example, 6 to 14 carbon atoms), alkoxy group (for example, 1 to 15 carbon atoms), cycloalkyl alkoxy group (for example, 1 to 15 carbon atoms), halogen atom, hydroxyl group, or phenylthio group. preferable.
The substituent may further have a substituent if possible. For example, the alkyl group may have a halogen atom as a substituent and may be an alkyl halide group such as a trifluoromethyl group. good.
次に、カチオン(ZaI-2)について説明する。
カチオン(ZaI-2)は、式(ZaI)におけるR201~R203が、それぞれ独立に、芳香環を有さない有機基を表すカチオンである。ここで芳香環とは、ヘテロ原子を含む芳香族環も包含する。
R201~R203としての芳香環を有さない有機基は、一般的に炭素数1~30であり、炭素数1~20が好ましい。
R201~R203は、それぞれ独立に、アルキル基、シクロアルキル基、アリル基、又はビニル基が好ましく、直鎖状又は分岐鎖状の2-オキソアルキル基、2-オキソシクロアルキル基、又は、アルコキシカルボニルメチル基がより好ましく、直鎖状又は分岐鎖状の2-オキソアルキル基が更に好ましい。 Next, the cation (ZaI-2) will be described.
The cation (ZaI-2) is a cation in which R 201 to R 203 in the formula (ZaI) independently represent an organic group having no aromatic ring. Here, the aromatic ring also includes an aromatic ring containing a hetero atom.
The organic group having no aromatic ring as R 201 to R 203 generally has 1 to 30 carbon atoms, and preferably 1 to 20 carbon atoms.
R 201 to R 203 are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group, and are linear or branched 2-oxoalkyl groups, 2-oxocycloalkyl groups, or An alkoxycarbonylmethyl group is more preferred, and a linear or branched 2-oxoalkyl group is even more preferred.
カチオン(ZaI-2)は、式(ZaI)におけるR201~R203が、それぞれ独立に、芳香環を有さない有機基を表すカチオンである。ここで芳香環とは、ヘテロ原子を含む芳香族環も包含する。
R201~R203としての芳香環を有さない有機基は、一般的に炭素数1~30であり、炭素数1~20が好ましい。
R201~R203は、それぞれ独立に、アルキル基、シクロアルキル基、アリル基、又はビニル基が好ましく、直鎖状又は分岐鎖状の2-オキソアルキル基、2-オキソシクロアルキル基、又は、アルコキシカルボニルメチル基がより好ましく、直鎖状又は分岐鎖状の2-オキソアルキル基が更に好ましい。 Next, the cation (ZaI-2) will be described.
The cation (ZaI-2) is a cation in which R 201 to R 203 in the formula (ZaI) independently represent an organic group having no aromatic ring. Here, the aromatic ring also includes an aromatic ring containing a hetero atom.
The organic group having no aromatic ring as R 201 to R 203 generally has 1 to 30 carbon atoms, and preferably 1 to 20 carbon atoms.
R 201 to R 203 are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group, and are linear or branched 2-oxoalkyl groups, 2-oxocycloalkyl groups, or An alkoxycarbonylmethyl group is more preferred, and a linear or branched 2-oxoalkyl group is even more preferred.
R201~R203のアルキル基及びシクロアルキル基としては、例えば、炭素数1~10の直鎖状アルキル基又は炭素数3~10の分岐鎖状アルキル基(例えば、メチル基、エチル基、プロピル基、ブチル基、及び、ペンチル基)、並びに、炭素数3~10のシクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基、及び、ノルボルニル基)が挙げられる。
R201~R203は、ハロゲン原子、アルコキシ基(例えば炭素数1~5)、水酸基、シアノ基、又は、ニトロ基によって更に置換されていてもよい。 Examples of the alkyl group and cycloalkyl group of R 201 to R 203 include a linear alkyl group having 1 to 10 carbon atoms or a branched chain alkyl group having 3 to 10 carbon atoms (for example, a methyl group, an ethyl group, and a propyl group). Groups, butyl groups, and pentyl groups), and cycloalkyl groups having 3 to 10 carbon atoms (for example, cyclopentyl groups, cyclohexyl groups, and norbornyl groups) can be mentioned.
R 201 to R 203 may be further substituted with a halogen atom, an alkoxy group (for example, 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group.
R201~R203は、ハロゲン原子、アルコキシ基(例えば炭素数1~5)、水酸基、シアノ基、又は、ニトロ基によって更に置換されていてもよい。 Examples of the alkyl group and cycloalkyl group of R 201 to R 203 include a linear alkyl group having 1 to 10 carbon atoms or a branched chain alkyl group having 3 to 10 carbon atoms (for example, a methyl group, an ethyl group, and a propyl group). Groups, butyl groups, and pentyl groups), and cycloalkyl groups having 3 to 10 carbon atoms (for example, cyclopentyl groups, cyclohexyl groups, and norbornyl groups) can be mentioned.
R 201 to R 203 may be further substituted with a halogen atom, an alkoxy group (for example, 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group.
次に、カチオン(ZaI-3b)について説明する。
カチオン(ZaI-3b)は、下記一般式(ZaI-3b)で表されるカチオンである。 Next, the cation (ZaI-3b) will be described.
The cation (ZaI-3b) is a cation represented by the following general formula (ZaI-3b).
カチオン(ZaI-3b)は、下記一般式(ZaI-3b)で表されるカチオンである。 Next, the cation (ZaI-3b) will be described.
The cation (ZaI-3b) is a cation represented by the following general formula (ZaI-3b).
一般式(ZaI-3b)中、
R1c~R5cは、それぞれ独立に、水素原子、アルキル基、シクロアルキル基、アリール基、アルコキシ基、アリールオキシ基、アルコキシカルボニル基、アルキルカルボニルオキシ基、シクロアルキルカルボニルオキシ基、ハロゲン原子、水酸基、ニトロ基、アルキルチオ基、又は、アリールチオ基を表す。
R6c及びR7cは、それぞれ独立に、水素原子、アルキル基(t-ブチル基等)、シクロアルキル基、ハロゲン原子、シアノ基、又は、アリール基を表す。
Rx及びRyは、それぞれ独立に、アルキル基、シクロアルキル基、2-オキソアルキル基、2-オキソシクロアルキル基、アルコキシカルボニルアルキル基、アリル基、又は、ビニル基を表す。 In the general formula (ZaI-3b),
R 1c to R 5c are independently hydrogen atom, alkyl group, cycloalkyl group, aryl group, alkoxy group, aryloxy group, alkoxycarbonyl group, alkylcarbonyloxy group, cycloalkylcarbonyloxy group, halogen atom and hydroxyl group. , Nitro group, alkylthio group, or arylthio group.
R 6c and R 7c independently represent a hydrogen atom, an alkyl group (t-butyl group, etc.), a cycloalkyl group, a halogen atom, a cyano group, or an aryl group.
R x and R y independently represent an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group, respectively.
R1c~R5cは、それぞれ独立に、水素原子、アルキル基、シクロアルキル基、アリール基、アルコキシ基、アリールオキシ基、アルコキシカルボニル基、アルキルカルボニルオキシ基、シクロアルキルカルボニルオキシ基、ハロゲン原子、水酸基、ニトロ基、アルキルチオ基、又は、アリールチオ基を表す。
R6c及びR7cは、それぞれ独立に、水素原子、アルキル基(t-ブチル基等)、シクロアルキル基、ハロゲン原子、シアノ基、又は、アリール基を表す。
Rx及びRyは、それぞれ独立に、アルキル基、シクロアルキル基、2-オキソアルキル基、2-オキソシクロアルキル基、アルコキシカルボニルアルキル基、アリル基、又は、ビニル基を表す。 In the general formula (ZaI-3b),
R 1c to R 5c are independently hydrogen atom, alkyl group, cycloalkyl group, aryl group, alkoxy group, aryloxy group, alkoxycarbonyl group, alkylcarbonyloxy group, cycloalkylcarbonyloxy group, halogen atom and hydroxyl group. , Nitro group, alkylthio group, or arylthio group.
R 6c and R 7c independently represent a hydrogen atom, an alkyl group (t-butyl group, etc.), a cycloalkyl group, a halogen atom, a cyano group, or an aryl group.
R x and R y independently represent an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group, respectively.
R1c~R5c中のいずれか2つ以上、R5cとR6c、R6cとR7c、R5cとRx、及びRxとRyは、それぞれ結合して環を形成してもよく、この環は、それぞれ独立に酸素原子、硫黄原子、ケトン基、エステル結合、又は、アミド結合を含んでいてもよい。
上記環としては、例えば、芳香族又は非芳香族の炭化水素環、芳香族又は非芳香族のヘテロ環、及びこれらの環が2つ以上組み合わされてなる多環縮合環が挙げられる。環は、3~10員環が挙げられ、4~8員環が好ましく、5又は6員環がより好ましい。 Any two or more of R 1c to R 5c , R 5c and R 6c , R 6c and R 7c , R 5c and R x , and R x and R y may be combined to form a ring, respectively. , This ring may independently contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond.
Examples of the ring include an aromatic or non-aromatic hydrocarbon ring, an aromatic or non-aromatic heterocycle, and a polycyclic condensed ring formed by combining two or more of these rings. Examples of the ring include a 3- to 10-membered ring, preferably a 4- to 8-membered ring, and more preferably a 5- or 6-membered ring.
上記環としては、例えば、芳香族又は非芳香族の炭化水素環、芳香族又は非芳香族のヘテロ環、及びこれらの環が2つ以上組み合わされてなる多環縮合環が挙げられる。環は、3~10員環が挙げられ、4~8員環が好ましく、5又は6員環がより好ましい。 Any two or more of R 1c to R 5c , R 5c and R 6c , R 6c and R 7c , R 5c and R x , and R x and R y may be combined to form a ring, respectively. , This ring may independently contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond.
Examples of the ring include an aromatic or non-aromatic hydrocarbon ring, an aromatic or non-aromatic heterocycle, and a polycyclic condensed ring formed by combining two or more of these rings. Examples of the ring include a 3- to 10-membered ring, preferably a 4- to 8-membered ring, and more preferably a 5- or 6-membered ring.
R1c~R5c中のいずれか2つ以上、R6cとR7c、及び、RxとRyが結合して形成する基としては、例えば、ブチレン基及びペンチレン基等のアルキレン基が挙げられる。このアルキレン基中のメチレン基が酸素原子等のヘテロ原子で置換されていてもよい。
R5cとR6c、及び、R5cとRxが結合して形成する基は、単結合又はアルキレン基が好ましい。アルキレン基としては、例えば、メチレン基及びエチレン基等が挙げられる。 Examples of the group formed by combining any two or more of R 1c to R 5c , R 6c and R 7c , and R x and R y include an alkylene group such as a butylene group and a pentylene group. .. The methylene group in the alkylene group may be substituted with a hetero atom such as an oxygen atom.
The group formed by bonding R 5c and R 6c , and R 5c and R x is preferably a single bond or an alkylene group. Examples of the alkylene group include a methylene group and an ethylene group.
R5cとR6c、及び、R5cとRxが結合して形成する基は、単結合又はアルキレン基が好ましい。アルキレン基としては、例えば、メチレン基及びエチレン基等が挙げられる。 Examples of the group formed by combining any two or more of R 1c to R 5c , R 6c and R 7c , and R x and R y include an alkylene group such as a butylene group and a pentylene group. .. The methylene group in the alkylene group may be substituted with a hetero atom such as an oxygen atom.
The group formed by bonding R 5c and R 6c , and R 5c and R x is preferably a single bond or an alkylene group. Examples of the alkylene group include a methylene group and an ethylene group.
次に、カチオン(ZaI-4b)について説明する。カチオン(ZaI-4b)は、下記一般式(ZaI-4b)で表されるカチオンである。
Next, the cation (ZaI-4b) will be described. The cation (ZaI-4b) is a cation represented by the following general formula (ZaI-4b).
一般式(ZaI-4b)中、
lは0~2の整数を表す。
rは0~8の整数を表す。
R13は、水素原子、フッ素原子、水酸基、アルキル基、アルコキシ基、アルコキシカルボニル基、又は、シクロアルキル基を有する基(シクロアルキル基そのものであってもよく、シクロアルキル基を一部に含む基であってもよい)を表す。これらの基は置換基を有していてもよい。
R14は、水酸基、アルキル基、アルコキシ基、アルコキシカルボニル基、アルキルカルボニル基、アルキルスルホニル基、シクロアルキルスルホニル基、又は、シクロアルキル基を有する基(シクロアルキル基そのものであってもよく、シクロアルキル基を一部に含む基であってもよい)を表す。これらの基は置換基を有していてもよい。R14は、複数存在する場合はそれぞれ独立して、水酸基等の上記基を表す。
R15は、それぞれ独立して、アルキル基、シクロアルキル基、又は、ナフチル基を表す。これらの基は置換基を有していてもよい。2つのR15が互いに結合して環を形成してもよい。2つのR15が互いに結合して環を形成するとき、環骨格内に、酸素原子、又は、窒素原子等のヘテロ原子を含んでもよい。一態様において、2つのR15がアルキレン基であり、互いに結合して環構造を形成することが好ましい。 In the general formula (ZaI-4b),
l represents an integer of 0 to 2.
r represents an integer from 0 to 8.
R 13 is a group having a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, an alkoxy group, an alkoxycarbonyl group, or a cycloalkyl group (the cycloalkyl group itself may be used, or a group containing a cycloalkyl group as a part). May be). These groups may have substituents.
R 14 is a hydroxyl group, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or a group having a cycloalkyl group (the cycloalkyl group itself may be a cycloalkyl group). It may be a group containing a group as a part). These groups may have substituents. When a plurality of R 14 are present, each independently represents the above group such as a hydroxyl group.
R 15 independently represents an alkyl group, a cycloalkyl group, or a naphthyl group. These groups may have substituents. Bonded to two R 15 each other may form a ring. When two R 15 are combined to form a ring together, in the ring skeleton, an oxygen atom, or may contain a hetero atom such as nitrogen atom. In one embodiment, two R 15 is an alkylene group, it is preferable to form a ring structure.
lは0~2の整数を表す。
rは0~8の整数を表す。
R13は、水素原子、フッ素原子、水酸基、アルキル基、アルコキシ基、アルコキシカルボニル基、又は、シクロアルキル基を有する基(シクロアルキル基そのものであってもよく、シクロアルキル基を一部に含む基であってもよい)を表す。これらの基は置換基を有していてもよい。
R14は、水酸基、アルキル基、アルコキシ基、アルコキシカルボニル基、アルキルカルボニル基、アルキルスルホニル基、シクロアルキルスルホニル基、又は、シクロアルキル基を有する基(シクロアルキル基そのものであってもよく、シクロアルキル基を一部に含む基であってもよい)を表す。これらの基は置換基を有していてもよい。R14は、複数存在する場合はそれぞれ独立して、水酸基等の上記基を表す。
R15は、それぞれ独立して、アルキル基、シクロアルキル基、又は、ナフチル基を表す。これらの基は置換基を有していてもよい。2つのR15が互いに結合して環を形成してもよい。2つのR15が互いに結合して環を形成するとき、環骨格内に、酸素原子、又は、窒素原子等のヘテロ原子を含んでもよい。一態様において、2つのR15がアルキレン基であり、互いに結合して環構造を形成することが好ましい。 In the general formula (ZaI-4b),
l represents an integer of 0 to 2.
r represents an integer from 0 to 8.
R 13 is a group having a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, an alkoxy group, an alkoxycarbonyl group, or a cycloalkyl group (the cycloalkyl group itself may be used, or a group containing a cycloalkyl group as a part). May be). These groups may have substituents.
R 14 is a hydroxyl group, an alkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or a group having a cycloalkyl group (the cycloalkyl group itself may be a cycloalkyl group). It may be a group containing a group as a part). These groups may have substituents. When a plurality of R 14 are present, each independently represents the above group such as a hydroxyl group.
R 15 independently represents an alkyl group, a cycloalkyl group, or a naphthyl group. These groups may have substituents. Bonded to two R 15 each other may form a ring. When two R 15 are combined to form a ring together, in the ring skeleton, an oxygen atom, or may contain a hetero atom such as nitrogen atom. In one embodiment, two R 15 is an alkylene group, it is preferable to form a ring structure.
一般式(ZaI-4b)において、R13、R14、及び、R15のアルキル基は、直鎖状又は分岐鎖状である。アルキル基の炭素数は、1~10が好ましい。アルキル基は、メチル基、エチル基、n-ブチル基、又は、t-ブチル基等がより好ましい。
In the general formula (ZaI-4b), the alkyl groups of R 13 , R 14 and R 15 are linear or branched chain. The alkyl group preferably has 1 to 10 carbon atoms. The alkyl group is more preferably a methyl group, an ethyl group, an n-butyl group, a t-butyl group or the like.
次に、一般式(ZaII)について説明する。一般式(ZaII)中、R204及びR205は、それぞれ独立に、アリール基、アルキル基、又は、シクロアルキル基を表す。
R204及びR205のアリール基は、フェニル基、又は、ナフチル基が好ましく、フェニル基がより好ましい。R204及びR205のアリール基は、酸素原子、窒素原子、又は、硫黄原子等を有するヘテロ環を有するアリール基であってもよい。ヘテロ環を有するアリール基の骨格としては、例えば、ピロール、フラン、チオフェン、インドール、ベンゾフラン、及び、ベンゾチオフェン等が挙げられる。
R204及びR205のアルキル基及びシクロアルキル基は、炭素数1~10の直鎖状アルキル基又は炭素数3~10の分岐鎖状アルキル基(例えば、メチル基、エチル基、プロピル基、ブチル基、又はペンチル基)、又は、炭素数3~10のシクロアルキル基(例えばシクロペンチル基、シクロヘキシル基、又はノルボルニル基)が好ましい。 Next, the general formula (ZaII) will be described. In the general formula (ZaII), R 204 and R 205 each independently represent an aryl group, an alkyl group, or a cycloalkyl group.
The aryl group of R 204 and R 205 is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group of R 204 and R 205 may be an aryl group having a heterocycle having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the skeleton of the aryl group having a heterocycle include pyrrole, furan, thiophene, indole, benzofuran, and benzothiophene.
The alkyl groups and cycloalkyl groups of R 204 and R 205 are linear alkyl groups having 1 to 10 carbon atoms or branched chain alkyl groups having 3 to 10 carbon atoms (for example, methyl group, ethyl group, propyl group, butyl group). A group or a pentyl group) or a cycloalkyl group having 3 to 10 carbon atoms (for example, a cyclopentyl group, a cyclohexyl group, or a norbornyl group) is preferable.
R204及びR205のアリール基は、フェニル基、又は、ナフチル基が好ましく、フェニル基がより好ましい。R204及びR205のアリール基は、酸素原子、窒素原子、又は、硫黄原子等を有するヘテロ環を有するアリール基であってもよい。ヘテロ環を有するアリール基の骨格としては、例えば、ピロール、フラン、チオフェン、インドール、ベンゾフラン、及び、ベンゾチオフェン等が挙げられる。
R204及びR205のアルキル基及びシクロアルキル基は、炭素数1~10の直鎖状アルキル基又は炭素数3~10の分岐鎖状アルキル基(例えば、メチル基、エチル基、プロピル基、ブチル基、又はペンチル基)、又は、炭素数3~10のシクロアルキル基(例えばシクロペンチル基、シクロヘキシル基、又はノルボルニル基)が好ましい。 Next, the general formula (ZaII) will be described. In the general formula (ZaII), R 204 and R 205 each independently represent an aryl group, an alkyl group, or a cycloalkyl group.
The aryl group of R 204 and R 205 is preferably a phenyl group or a naphthyl group, and more preferably a phenyl group. The aryl group of R 204 and R 205 may be an aryl group having a heterocycle having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the skeleton of the aryl group having a heterocycle include pyrrole, furan, thiophene, indole, benzofuran, and benzothiophene.
The alkyl groups and cycloalkyl groups of R 204 and R 205 are linear alkyl groups having 1 to 10 carbon atoms or branched chain alkyl groups having 3 to 10 carbon atoms (for example, methyl group, ethyl group, propyl group, butyl group). A group or a pentyl group) or a cycloalkyl group having 3 to 10 carbon atoms (for example, a cyclopentyl group, a cyclohexyl group, or a norbornyl group) is preferable.
R204及びR205のアリール基、アルキル基、及び、シクロアルキル基は、それぞれ独立に、置換基を有していてもよい。R204及びR205のアリール基、アルキル基、及び、シクロアルキル基が有していてもよい置換基としては、例えば、アルキル基(例えば炭素数1~15)、シクロアルキル基(例えば炭素数3~15)、アリール基(例えば炭素数6~15)、アルコキシ基(例えば炭素数1~15)、ハロゲン原子、水酸基、及び、フェニルチオ基等が挙げられる。
The aryl group, alkyl group, and cycloalkyl group of R 204 and R 205 may each independently have a substituent. Examples of the substituents that the aryl group, alkyl group, and cycloalkyl group of R 204 and R 205 may have include an alkyl group (for example, 1 to 15 carbon atoms) and a cycloalkyl group (for example, 3 carbon atoms). ~ 15), an aryl group (for example, 6 to 15 carbon atoms), an alkoxy group (for example, 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, a phenylthio group and the like.
<その他の光酸発生剤>
本発明の組成物は、上述した以外のその他の光酸発生剤を使用してもよい。
その他の光酸発生剤としては、例えば、「M+Z-(M+はカチオンを表しZ-はアニオンを表す)」で表される化合物(オニウム塩)が挙げられる。 <Other photoacid generators>
In the composition of the present invention, other photoacid generators other than those described above may be used.
Other photoacid generators, for example, "M + Z - (M + represents a cation and Z - represents an anion)" include compounds represented by (onium salt).
本発明の組成物は、上述した以外のその他の光酸発生剤を使用してもよい。
その他の光酸発生剤としては、例えば、「M+Z-(M+はカチオンを表しZ-はアニオンを表す)」で表される化合物(オニウム塩)が挙げられる。 <Other photoacid generators>
In the composition of the present invention, other photoacid generators other than those described above may be used.
Other photoacid generators, for example, "M + Z - (M + represents a cation and Z - represents an anion)" include compounds represented by (onium salt).
「M+ Z-」で表される化合物において、M+は、カチオンを表し、一般式(PA-1)におけるカチオンと同様のカチオンが挙げられる。
「M+ Z-」で表される化合物において、Z-は、アニオンを表し、求核反応を起こす能力が著しく低いアニオンが好ましい。
上記アニオンとしては、例えば、スルホン酸アニオン(フルオロアルキルスルホン酸アニオン等の脂肪族スルホン酸アニオン、芳香族スルホン酸アニオン、及び、カンファースルホン酸アニオン等)、カルボン酸アニオン(脂肪族カルボン酸アニオン、芳香族カルボン酸アニオン、及び、アラルキルカルボン酸アニオン等)、及び、トリス(アルキルスルホニル)メチドアニオンが挙げられる。 "M + Z -" in a compound represented by, M + represents a cation, include the same cations as the cation in formula (PA-1).
In the compounds represented by, Z - "M + Z" - represents an anion, the ability of causing a nucleophilic reaction is extremely low anion preferred.
Examples of the anion include sulfonic acid anions (aliphatic sulfonic acid anions such as fluoroalkyl sulfonic acid anions, aromatic sulfonic acid anions, camphor sulfonic acid anions, etc.) and carboxylic acid anions (aliphatic carboxylic acid anions, aromatics, etc.). Group carboxylic acid anions, aralkyl carboxylic acid anions, etc.), and tris (alkylsulfonyl) methide anions.
「M+ Z-」で表される化合物において、Z-は、アニオンを表し、求核反応を起こす能力が著しく低いアニオンが好ましい。
上記アニオンとしては、例えば、スルホン酸アニオン(フルオロアルキルスルホン酸アニオン等の脂肪族スルホン酸アニオン、芳香族スルホン酸アニオン、及び、カンファースルホン酸アニオン等)、カルボン酸アニオン(脂肪族カルボン酸アニオン、芳香族カルボン酸アニオン、及び、アラルキルカルボン酸アニオン等)、及び、トリス(アルキルスルホニル)メチドアニオンが挙げられる。 "M + Z -" in a compound represented by, M + represents a cation, include the same cations as the cation in formula (PA-1).
In the compounds represented by, Z - "M + Z" - represents an anion, the ability of causing a nucleophilic reaction is extremely low anion preferred.
Examples of the anion include sulfonic acid anions (aliphatic sulfonic acid anions such as fluoroalkyl sulfonic acid anions, aromatic sulfonic acid anions, camphor sulfonic acid anions, etc.) and carboxylic acid anions (aliphatic carboxylic acid anions, aromatics, etc.). Group carboxylic acid anions, aralkyl carboxylic acid anions, etc.), and tris (alkylsulfonyl) methide anions.
脂肪族スルホン酸アニオン及び脂肪族カルボン酸アニオンにおける脂肪族部位は、アルキル基であってもシクロアルキル基であってもよく、炭素数1~30の直鎖状又は分岐鎖状のアルキル基、及び、炭素数3~30のシクロアルキル基が好ましい。
The aliphatic moiety in the aliphatic sulfonic acid anion and the aliphatic carboxylic acid anion may be an alkyl group or a cycloalkyl group, and may be a linear or branched alkyl group having 1 to 30 carbon atoms. , A cycloalkyl group having 3 to 30 carbon atoms is preferable.
芳香族スルホン酸アニオン及び芳香族カルボン酸アニオンにおける芳香環基は、炭素数6~14のアリール基が好ましく、例えば、フェニル基、トリル基、及び、ナフチル基が挙げられる。
The aromatic ring group in the aromatic sulfonic acid anion and the aromatic carboxylic acid anion is preferably an aryl group having 6 to 14 carbon atoms, and examples thereof include a phenyl group, a tolyl group, and a naphthyl group.
上記で挙げたアルキル基、シクロアルキル基、及び、アリール基が有し得る置換基としては、例えば、ニトロ基、フッ素原子等のハロゲン原子、カルボン酸基、水酸基、アミノ基、シアノ基、アルコキシ基(好ましくは炭素数1~15)、シクロアルキル基(好ましくは炭素数3~15)、アリール基(好ましくは炭素数6~14)、アリールオキシ基(好ましくは炭素数6~14)、アルコキシカルボニル基(好ましくは炭素数2~7)、アシル基(好ましくは炭素数2~12)、アルコキシカルボニルオキシ基(好ましくは炭素数2~7)、アルキルチオ基(好ましくは炭素数1~15)、アルキルスルホニル基(好ましくは炭素数1~15)、アルキルイミノスルホニル基(好ましくは炭素数1~15)、アリールオキシスルホニル基(好ましくは炭素数6~20)、アルキルアリールオキシスルホニル基(好ましくは炭素数7~20)、シクロアルキルアリールオキシスルホニル基(好ましくは炭素数10~20)、アルキルオキシアルキルオキシ基(好ましくは炭素数5~20)、及び、シクロアルキルアルキルオキシアルキルオキシ基(好ましくは炭素数8~20)が挙げられる。
Examples of the substituents that the alkyl group, cycloalkyl group, and aryl group mentioned above can have include a halogen atom such as a nitro group and a fluorine atom, a carboxylic acid group, a hydroxyl group, an amino group, a cyano group, and an alkoxy group. (Preferably 1 to 15 carbon atoms), cycloalkyl group (preferably 3 to 15 carbon atoms), aryl group (preferably 6 to 14 carbon atoms), aryloxy group (preferably 6 to 14 carbon atoms), alkoxycarbonyl Group (preferably 2 to 7 carbon atoms), acyl group (preferably 2 to 12 carbon atoms), alkoxycarbonyloxy group (preferably 2 to 7 carbon atoms), alkylthio group (preferably 1 to 15 carbon atoms), alkyl A sulfonyl group (preferably 1 to 15 carbon atoms), an alkyliminosulfonyl group (preferably 1 to 15 carbon atoms), an aryloxysulfonyl group (preferably 6 to 20 carbon atoms), an alkylaryloxysulfonyl group (preferably carbon number 1 to 15). 7 to 20), cycloalkylaryloxysulfonyl group (preferably 10 to 20 carbon atoms), alkyloxyalkyloxy group (preferably 5 to 20 carbon atoms), and cycloalkylalkyloxyalkyloxy group (preferably carbon number of carbons). 8 to 20) can be mentioned.
アラルキルカルボン酸アニオンにおけるアラルキル基は、炭素数7~12のアラルキル基が好ましく、例えば、ベンジル基、フェネチル基、ナフチルメチル基、ナフチルエチル基、及び、ナフチルブチル基が挙げられる。
The aralkyl group in the aralkyl carboxylic acid anion is preferably an aralkyl group having 7 to 12 carbon atoms, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylbutyl group.
トリス(アルキルスルホニル)メチドアニオンにおけるアルキル基は、炭素数1~5のアルキル基が好ましい。これらのアルキル基の置換基としては、例えば、ハロゲン原子、ハロゲン原子で置換されたアルキル基、アルコキシ基、アルキルチオ基、アルキルオキシスルホニル基、アリールオキシスルホニル基、及び、シクロアルキルアリールオキシスルホニル基が挙げられ、フッ素原子又はフッ素原子で置換されたアルキル基が好ましい。
The alkyl group in the tris (alkylsulfonyl) methideanion is preferably an alkyl group having 1 to 5 carbon atoms. Examples of the substituent of these alkyl groups include a halogen atom, an alkyl group substituted with a halogen atom, an alkoxy group, an alkylthio group, an alkyloxysulfonyl group, an aryloxysulfonyl group, and a cycloalkylaryloxysulfonyl group. A fluorine atom or an alkyl group substituted with a fluorine atom is preferable.
その他の非求核性アニオンとしては、例えば、フッ素化燐(例えば、PF6
-)、フッ素化ホウ素(例えば、BF4
-)、及び、フッ素化アンチモン(例えば、SbF6
-)が挙げられる。
As other non-nucleophilic anions, e.g., fluorinated phosphorus (e.g., PF 6 -), fluorinated boron (e.g., BF 4 -), and fluorinated antimony (e.g., SbF 6 -) and the like.
非求核性アニオンは、スルホン酸の少なくともα位がフッ素原子で置換された脂肪族スルホン酸アニオン、フッ素原子若しくはフッ素原子を有する基で置換された芳香族スルホン酸アニオン、又は、アルキル基がフッ素原子で置換されたトリス(アルキルスルホニル)メチドアニオンが好ましい。中でも、パーフロロ脂肪族スルホン酸アニオン(好ましくは炭素数4~8)、又は、フッ素原子を有するベンゼンスルホン酸アニオンがより好ましく、ノナフロロブタンスルホン酸アニオン、パーフロロオクタンスルホン酸アニオン、ペンタフロロベンゼンスルホン酸アニオン、又は、3,5-ビス(トリフロロメチル)ベンゼンスルホン酸アニオンが更に好ましい。
The non-nucleophilic anion is an aliphatic sulfonic acid anion in which at least the α position of the sulfonic acid is substituted with a fluorine atom, an aromatic sulfonic acid anion in which a fluorine atom or a group having a fluorine atom is substituted, or an alkyl group in which fluorine is used. Atomically substituted tris (alkylsulfonyl) methideanions are preferred. Among them, a perfluoroaliphatic sulfonic acid anion (preferably 4 to 8 carbon atoms) or a benzenesulfonic acid anion having a fluorine atom is more preferable, and a nonafluorobutane sulfonic acid anion, a perfluorooctane sulfonic acid anion, and a pentafluorobenzene sulfone are used. Acid anions or 3,5-bis (trifluoromethyl) benzenesulfonic acid anions are more preferred.
酸強度の点からは、発生酸のpKaが-1以下であるのが、感度向上のために好ましい。
From the viewpoint of acid strength, it is preferable that the pKa of the generated acid is -1 or less in order to improve the sensitivity.
また、非求核性アニオンは、以下の一般式(AN1)で表されるアニオンも好ましい。
Further, as the non-nucleophilic anion, an anion represented by the following general formula (AN1) is also preferable.
式中、Xfは、それぞれ独立に、フッ素原子、又は、少なくとも1つのフッ素原子で置換されたアルキル基を表す。
R1及びR2は、それぞれ独立に、水素原子、フッ素原子、又は、アルキル基を表し、複数存在する場合のR1及びR2は、それぞれ同一でも異なっていてもよい。
Lは、2価の連結基を表し、複数存在する場合のLは同一でも異なっていてもよい。
Aは、環状の有機基を表す。
xは1~20の整数を表し、yは0~10の整数を表し、zは0~10の整数を表す。 In the formula, Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.
R 1 and R 2 independently represent a hydrogen atom, a fluorine atom, or an alkyl group, and when a plurality of them are present, R 1 and R 2 may be the same or different, respectively.
L represents a divalent linking group, and when there are a plurality of L, L may be the same or different.
A represents a cyclic organic group.
x represents an integer of 1 to 20, y represents an integer of 0 to 10, and z represents an integer of 0 to 10.
R1及びR2は、それぞれ独立に、水素原子、フッ素原子、又は、アルキル基を表し、複数存在する場合のR1及びR2は、それぞれ同一でも異なっていてもよい。
Lは、2価の連結基を表し、複数存在する場合のLは同一でも異なっていてもよい。
Aは、環状の有機基を表す。
xは1~20の整数を表し、yは0~10の整数を表し、zは0~10の整数を表す。 In the formula, Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.
R 1 and R 2 independently represent a hydrogen atom, a fluorine atom, or an alkyl group, and when a plurality of them are present, R 1 and R 2 may be the same or different, respectively.
L represents a divalent linking group, and when there are a plurality of L, L may be the same or different.
A represents a cyclic organic group.
x represents an integer of 1 to 20, y represents an integer of 0 to 10, and z represents an integer of 0 to 10.
一般式(AN1)について、更に詳細に説明する。
Xfのフッ素原子で置換されたアルキル基におけるアルキル基の炭素数は、1~10が好ましく、1~4がより好ましい。また、Xfのフッ素原子で置換されたアルキル基は、パーフルオロアルキル基が好ましい。
Xfは、フッ素原子又は炭素数1~4のパーフルオロアルキル基が好ましい。Xfは、例えば、フッ素原子、CF3、C2F5、C3F7、C4F9、CH2CF3、CH2CH2CF3、CH2C2F5、CH2CH2C2F5、CH2C3F7、CH2CH2C3F7、CH2C4F9、及び、CH2CH2C4F9等が挙げられ、中でも、フッ素原子、又は、CF3が好ましい。特に、双方のXfがフッ素原子であることが好ましい。 The general formula (AN1) will be described in more detail.
The number of carbon atoms of the alkyl group in the alkyl group substituted with the fluorine atom of Xf is preferably 1 to 10, and more preferably 1 to 4. The alkyl group substituted with the fluorine atom of Xf is preferably a perfluoroalkyl group.
Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms. Xf is, for example, fluorine atom, CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C. 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 , and CH 2 CH 2 C 4 F 9 , among others, fluorine atom or CF. 3 is preferable. In particular, it is preferable that both Xfs are fluorine atoms.
Xfのフッ素原子で置換されたアルキル基におけるアルキル基の炭素数は、1~10が好ましく、1~4がより好ましい。また、Xfのフッ素原子で置換されたアルキル基は、パーフルオロアルキル基が好ましい。
Xfは、フッ素原子又は炭素数1~4のパーフルオロアルキル基が好ましい。Xfは、例えば、フッ素原子、CF3、C2F5、C3F7、C4F9、CH2CF3、CH2CH2CF3、CH2C2F5、CH2CH2C2F5、CH2C3F7、CH2CH2C3F7、CH2C4F9、及び、CH2CH2C4F9等が挙げられ、中でも、フッ素原子、又は、CF3が好ましい。特に、双方のXfがフッ素原子であることが好ましい。 The general formula (AN1) will be described in more detail.
The number of carbon atoms of the alkyl group in the alkyl group substituted with the fluorine atom of Xf is preferably 1 to 10, and more preferably 1 to 4. The alkyl group substituted with the fluorine atom of Xf is preferably a perfluoroalkyl group.
Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms. Xf is, for example, fluorine atom, CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C. 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 , and CH 2 CH 2 C 4 F 9 , among others, fluorine atom or CF. 3 is preferable. In particular, it is preferable that both Xfs are fluorine atoms.
R1及びR2のアルキル基は、置換基(好ましくはフッ素原子)を有していてもよく、置換基中の炭素数は1~4が好ましい。置換基は、炭素数1~4のパーフルオロアルキル基が好ましい。R1及びR2の置換基を有するアルキル基は、例えば、CF3、C2F5、C3F7、C4F9、C5F11、C6F13、C7F15、C8F17、CH2CF3、CH2CH2CF3、CH2C2F5、CH2CH2C2F5、CH2C3F7、CH2CH2C3F7、CH2C4F9、及び、CH2CH2C4F9等が挙げられ、中でも、CF3が好ましい。
R1及びR2は、フッ素原子又はCF3が好ましい。 The alkyl groups of R 1 and R 2 may have a substituent (preferably a fluorine atom), and the number of carbon atoms in the substituent is preferably 1 to 4. The substituent is preferably a perfluoroalkyl group having 1 to 4 carbon atoms. Alkyl groups having substituents for R 1 and R 2 include, for example, CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , C 5 F 11 , C 6 F 13 , C 7 F 15 , C. 8 F 17 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 and CH 2 CH 2 C 4 F 9 and the like can be mentioned, and among them, CF 3 is preferable.
R 1 and R 2 are preferably a fluorine atom or CF 3.
R1及びR2は、フッ素原子又はCF3が好ましい。 The alkyl groups of R 1 and R 2 may have a substituent (preferably a fluorine atom), and the number of carbon atoms in the substituent is preferably 1 to 4. The substituent is preferably a perfluoroalkyl group having 1 to 4 carbon atoms. Alkyl groups having substituents for R 1 and R 2 include, for example, CF 3 , C 2 F 5 , C 3 F 7 , C 4 F 9 , C 5 F 11 , C 6 F 13 , C 7 F 15 , C. 8 F 17 , CH 2 CF 3 , CH 2 CH 2 CF 3 , CH 2 C 2 F 5 , CH 2 CH 2 C 2 F 5 , CH 2 C 3 F 7 , CH 2 CH 2 C 3 F 7 , CH 2 C 4 F 9 and CH 2 CH 2 C 4 F 9 and the like can be mentioned, and among them, CF 3 is preferable.
R 1 and R 2 are preferably a fluorine atom or CF 3.
xは1~10の整数が好ましく、1~5がより好ましい。
yは0~4の整数が好ましく、0がより好ましい。
zは0~5の整数が好ましく、0~3の整数がより好ましい。
Lの2価の連結基としては、例えば、-COO-、-CO-、-O-、-S-、-SO-、-SO2-、アルキレン基、シクロアルキレン基、アルケニレン基、及び、これらの複数が連結した連結基等が挙げられ、総炭素数12以下の連結基が好ましい。中でも、-COO-、-CO-、又は、-O-が好ましく、-COO-がより好ましい。 x is preferably an integer of 1 to 10, and more preferably 1 to 5.
y is preferably an integer of 0 to 4, more preferably 0.
z is preferably an integer of 0 to 5, more preferably an integer of 0 to 3.
Examples of the divalent linking group of L include -COO-, -CO- , -O-, -S-, -SO-, -SO 2- , alkylene group, cycloalkylene group, alkaneylene group, and these. Examples thereof include a linking group in which a plurality of the above groups are linked, and a linking group having a total carbon number of 12 or less is preferable. Among them, -COO-, -CO-, or -O- is preferable, and -COO- is more preferable.
yは0~4の整数が好ましく、0がより好ましい。
zは0~5の整数が好ましく、0~3の整数がより好ましい。
Lの2価の連結基としては、例えば、-COO-、-CO-、-O-、-S-、-SO-、-SO2-、アルキレン基、シクロアルキレン基、アルケニレン基、及び、これらの複数が連結した連結基等が挙げられ、総炭素数12以下の連結基が好ましい。中でも、-COO-、-CO-、又は、-O-が好ましく、-COO-がより好ましい。 x is preferably an integer of 1 to 10, and more preferably 1 to 5.
y is preferably an integer of 0 to 4, more preferably 0.
z is preferably an integer of 0 to 5, more preferably an integer of 0 to 3.
Examples of the divalent linking group of L include -COO-, -CO- , -O-, -S-, -SO-, -SO 2- , alkylene group, cycloalkylene group, alkaneylene group, and these. Examples thereof include a linking group in which a plurality of the above groups are linked, and a linking group having a total carbon number of 12 or less is preferable. Among them, -COO-, -CO-, or -O- is preferable, and -COO- is more preferable.
Aの環状の有機基は、環状構造を有するものであれば特に限定されず、脂環基、芳香環基、及び、複素環基(芳香族性を有するものだけでなく、芳香族性を有さないものも含む)等が挙げられる。
脂環基は、単環でも多環でもよく、シクロペンチル基、シクロヘキシル基、及び、シクロオクチル基等の単環のシクロアルキル基が好ましく、その他にも、ノルボルニル基、トリシクロデカニル基、テトラシクロデカニル基、テトラシクロドデカニル基、及び、アダマンチル基等の多環のシクロアルキル基が好ましい。中でも、ノルボルニル基、トリシクロデカニル基、テトラシクロデカニル基、テトラシクロドデカニル基、及び、アダマンチル基等の炭素数7以上のかさ高い構造を有する脂環基が、露光後加熱工程での膜中拡散性を抑制でき、MEEF(Mask Error Enhancement Factor)向上の点から好ましい。
芳香環基としては、例えば、ベンゼン環、ナフタレン環、フェナンスレン環、及び、アントラセン環等が挙げられる。
複素環基としては、例えば、フラン環、チオフェン環、ベンゾフラン環、ベンゾチオフェン環、ジベンゾフラン環、ジベンゾチオフェン環、及び、ピリジン環等由来の基が挙げられる。中でも、フラン環、チオフェン環、又は、ピリジン環由来の基が好ましい。 The cyclic organic group of A is not particularly limited as long as it has a cyclic structure, and has an alicyclic group, an aromatic ring group, and a heterocyclic group (not only those having aromaticity but also aromaticity). (Including those that do not), etc.
The alicyclic group may be monocyclic or polycyclic, and a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group is preferable, and in addition, a norbornyl group, a tricyclodecanyl group, and a tetracyclo Polycyclic cycloalkyl groups such as a decanyl group, a tetracyclododecanyl group, and an adamantyl group are preferable. Among them, alicyclic groups having a bulky structure having 7 or more carbon atoms, such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group, are used in the post-exposure heating step. It is preferable from the viewpoint of suppressing the diffusibility in the membrane and improving the MEEF (Mask Error Enhancement Factor).
Examples of the aromatic ring group include a benzene ring, a naphthalene ring, a phenanthrene ring, an anthracene ring and the like.
Examples of the heterocyclic group include groups derived from a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, a pyridine ring and the like. Of these, a group derived from a furan ring, a thiophene ring, or a pyridine ring is preferable.
脂環基は、単環でも多環でもよく、シクロペンチル基、シクロヘキシル基、及び、シクロオクチル基等の単環のシクロアルキル基が好ましく、その他にも、ノルボルニル基、トリシクロデカニル基、テトラシクロデカニル基、テトラシクロドデカニル基、及び、アダマンチル基等の多環のシクロアルキル基が好ましい。中でも、ノルボルニル基、トリシクロデカニル基、テトラシクロデカニル基、テトラシクロドデカニル基、及び、アダマンチル基等の炭素数7以上のかさ高い構造を有する脂環基が、露光後加熱工程での膜中拡散性を抑制でき、MEEF(Mask Error Enhancement Factor)向上の点から好ましい。
芳香環基としては、例えば、ベンゼン環、ナフタレン環、フェナンスレン環、及び、アントラセン環等が挙げられる。
複素環基としては、例えば、フラン環、チオフェン環、ベンゾフラン環、ベンゾチオフェン環、ジベンゾフラン環、ジベンゾチオフェン環、及び、ピリジン環等由来の基が挙げられる。中でも、フラン環、チオフェン環、又は、ピリジン環由来の基が好ましい。 The cyclic organic group of A is not particularly limited as long as it has a cyclic structure, and has an alicyclic group, an aromatic ring group, and a heterocyclic group (not only those having aromaticity but also aromaticity). (Including those that do not), etc.
The alicyclic group may be monocyclic or polycyclic, and a monocyclic cycloalkyl group such as a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group is preferable, and in addition, a norbornyl group, a tricyclodecanyl group, and a tetracyclo Polycyclic cycloalkyl groups such as a decanyl group, a tetracyclododecanyl group, and an adamantyl group are preferable. Among them, alicyclic groups having a bulky structure having 7 or more carbon atoms, such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group, are used in the post-exposure heating step. It is preferable from the viewpoint of suppressing the diffusibility in the membrane and improving the MEEF (Mask Error Enhancement Factor).
Examples of the aromatic ring group include a benzene ring, a naphthalene ring, a phenanthrene ring, an anthracene ring and the like.
Examples of the heterocyclic group include groups derived from a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, a pyridine ring and the like. Of these, a group derived from a furan ring, a thiophene ring, or a pyridine ring is preferable.
また、環状の有機基としては、ラクトン構造を有する基も挙げられ、具体例としては、前述の一般式(LC1-1)~(LC1-22)で表されるラクトン構造が挙げられる。
Further, examples of the cyclic organic group include a group having a lactone structure, and specific examples thereof include lactone structures represented by the above-mentioned general formulas (LC1-1) to (LC1-22).
上記環状の有機基は、置換基を有していてもよい。上記置換基は、アルキル基(直鎖状でも、分岐鎖状でもよく、環状構造を含んでいてもよい。好ましくは炭素数1~12)、シクロアルキル基(単環、及び、多環のいずれであってもよく、多環である場合スピロ環であってもよい。好ましくは炭素数は3~20)、アリール基(好ましくは炭素数6~14)、水酸基、アルコキシ基、エステル基、アミド基、ウレタン基、ウレイド基、チオエーテル基、スルホンアミド基、及び、スルホン酸エステル基等が挙げられる。なお、環状の有機基を構成する炭素(環形成に寄与する炭素)はカルボニル炭素であってもよい。
The cyclic organic group may have a substituent. The substituent may be an alkyl group (linear or branched chain, and may contain a cyclic structure, preferably having 1 to 12 carbon atoms) or a cycloalkyl group (monocyclic or polycyclic). It may be a spiro ring in the case of a polycycle, preferably having a carbon number of 3 to 20), an aryl group (preferably having a carbon number of 6 to 14), a hydroxyl group, an alkoxy group, an ester group, and an amide. Examples thereof include a group, a urethane group, a ureido group, a thioether group, a sulfonamide group, and a sulfonic acid ester group. The carbon constituting the cyclic organic group (carbon that contributes to ring formation) may be carbonyl carbon.
光酸発生剤としては、特開2014-41328号公報の段落[0368]~[0377]、及び、特開2013-228681号公報の段落[0240]~[0262](対応する米国特許出願公開第2015/004533号明細書の[0339])が援用でき、これらの内容は本願明細書に組み込まれる。
また、好ましい具体例として以下の化合物が挙げられる。下記化合物において、可能な場合、アニオンとカチオンとは任意に交換できる。 Examples of the photoacid generator include paragraphs [0368] to [0377] of Japanese Patent Application Laid-Open No. 2014-41328 and paragraphs [0240] to [0262] of Japanese Patent Application Laid-Open No. 2013-228681 (corresponding US Patent Application Publication No. [0339]) of the specification of 2015/004533 can be incorporated, and these contents are incorporated in the specification of the present application.
Moreover, the following compound is mentioned as a preferable specific example. In the following compounds, anions and cations can be optionally exchanged, if possible.
また、好ましい具体例として以下の化合物が挙げられる。下記化合物において、可能な場合、アニオンとカチオンとは任意に交換できる。 Examples of the photoacid generator include paragraphs [0368] to [0377] of Japanese Patent Application Laid-Open No. 2014-41328 and paragraphs [0240] to [0262] of Japanese Patent Application Laid-Open No. 2013-228681 (corresponding US Patent Application Publication No. [0339]) of the specification of 2015/004533 can be incorporated, and these contents are incorporated in the specification of the present application.
Moreover, the following compound is mentioned as a preferable specific example. In the following compounds, anions and cations can be optionally exchanged, if possible.
<化合物(P)>
本発明の組成物は、光酸発生剤として、2つ以上(好ましくは2つ又は3つ)のカチオン部位、及び上記カチオン部位と同数のアニオン部位を有する化合物(P)を含むことが好ましい。
以下、カチオン部位及びアニオン部位の具体的な構成についてそれぞれ説明した後に、化合物(P)がとり得る具体的な構成について説明する。 <Compound (P)>
The composition of the present invention preferably contains, as a photoacid generator, a compound (P) having two or more (preferably two or three) cation sites and the same number of anion sites as the above cation sites.
Hereinafter, the specific configurations of the cation moiety and the anion moiety will be described, and then the specific configurations that the compound (P) can take will be described.
本発明の組成物は、光酸発生剤として、2つ以上(好ましくは2つ又は3つ)のカチオン部位、及び上記カチオン部位と同数のアニオン部位を有する化合物(P)を含むことが好ましい。
以下、カチオン部位及びアニオン部位の具体的な構成についてそれぞれ説明した後に、化合物(P)がとり得る具体的な構成について説明する。 <Compound (P)>
The composition of the present invention preferably contains, as a photoacid generator, a compound (P) having two or more (preferably two or three) cation sites and the same number of anion sites as the above cation sites.
Hereinafter, the specific configurations of the cation moiety and the anion moiety will be described, and then the specific configurations that the compound (P) can take will be described.
(カチオン部位)
カチオン部位とは、正電荷を帯びた原子又は原子団を含む構造部位であり、例えば、化合物(P)が有機カチオンを有する場合において、上記有機カチオンを、カチオン部位としてもよい。 (Cation site)
The cation moiety is a structural moiety containing a positively charged atom or atomic group. For example, when the compound (P) has an organic cation, the organic cation may be used as the cation moiety.
カチオン部位とは、正電荷を帯びた原子又は原子団を含む構造部位であり、例えば、化合物(P)が有機カチオンを有する場合において、上記有機カチオンを、カチオン部位としてもよい。 (Cation site)
The cation moiety is a structural moiety containing a positively charged atom or atomic group. For example, when the compound (P) has an organic cation, the organic cation may be used as the cation moiety.
有機カチオンとしては、上記一般式(PA-1)中のM+についての説明の中で挙げた有機カチオンが同様に使用できる。
As the organic cation, the organic cation mentioned in the description of M + in the above general formula (PA-1) can be used in the same manner.
・一般式(I)
化合物(P)が有する2つ以上のカチオン部位(好ましくは有機カチオン)の少なくとも1つ(好ましくは全部)は、一般式(I)で表される基を有することが好ましい。
*-Arx-(RI)ni (I) ・ General formula (I)
At least one (preferably all) of the two or more cation sites (preferably organic cations) of compound (P) preferably has a group represented by the general formula (I).
* -Ar x- (RI) ni (I)
化合物(P)が有する2つ以上のカチオン部位(好ましくは有機カチオン)の少なくとも1つ(好ましくは全部)は、一般式(I)で表される基を有することが好ましい。
*-Arx-(RI)ni (I) ・ General formula (I)
At least one (preferably all) of the two or more cation sites (preferably organic cations) of compound (P) preferably has a group represented by the general formula (I).
* -Ar x- (RI) ni (I)
一般式(I)中、*は結合位置を表す。*は、カチオン化した原子(S+又はI+等)に対する結合位置であることが好ましい。つまり、一般式(I)におけるArxは、カチオン化した原子(S+又はI+等)と直接結合することが好ましい。
In the general formula (I), * represents the bonding position. * Is preferably a bond position with respect to a cationized atom (S + or I +, etc.). That is, it is preferable that Ar x in the general formula (I) is directly bonded to a cationized atom (S +, I +, etc.).
一般式(I)中、Arxは、芳香族炭化水素環基を表す。
上記芳香族炭化水素環基は、-(RI)ni以外の置換基を有さない。
上記芳香族炭化水素環基は、単環でも多環でもよく、単環が好ましい。
上記芳香族炭化水素環基としては、例えば、ベンゼン環基、ナフタレン環基、及び、アントラセン環基が挙げられる。中でも、上記芳香族炭化水素環基は、ベンゼン環基又はナフタレン環基が好ましく、ベンゼン環基がより好ましい。 In the general formula (I), Ar x represents an aromatic hydrocarbon ring group.
The aromatic hydrocarbon ring group has no substituent other than − (RI) ni.
The aromatic hydrocarbon ring group may be monocyclic or polycyclic, and a monocyclic ring is preferable.
Examples of the aromatic hydrocarbon ring group include a benzene ring group, a naphthalene ring group, and an anthracene ring group. Among them, the aromatic hydrocarbon ring group is preferably a benzene ring group or a naphthalene ring group, and more preferably a benzene ring group.
上記芳香族炭化水素環基は、-(RI)ni以外の置換基を有さない。
上記芳香族炭化水素環基は、単環でも多環でもよく、単環が好ましい。
上記芳香族炭化水素環基としては、例えば、ベンゼン環基、ナフタレン環基、及び、アントラセン環基が挙げられる。中でも、上記芳香族炭化水素環基は、ベンゼン環基又はナフタレン環基が好ましく、ベンゼン環基がより好ましい。 In the general formula (I), Ar x represents an aromatic hydrocarbon ring group.
The aromatic hydrocarbon ring group has no substituent other than − (RI) ni.
The aromatic hydrocarbon ring group may be monocyclic or polycyclic, and a monocyclic ring is preferable.
Examples of the aromatic hydrocarbon ring group include a benzene ring group, a naphthalene ring group, and an anthracene ring group. Among them, the aromatic hydrocarbon ring group is preferably a benzene ring group or a naphthalene ring group, and more preferably a benzene ring group.
一般式(I)中、niは1以上の整数を表す。
niは1~5の整数が好ましい。 In the general formula (I), ni represents an integer of 1 or more.
ni is preferably an integer of 1 to 5.
niは1~5の整数が好ましい。 In the general formula (I), ni represents an integer of 1 or more.
ni is preferably an integer of 1 to 5.
一般式(I)中、RIはカチオン性官能基を有さない置換基を表す。
置換基であるRIは、カチオン性官能基(>S+-、-I+-、>C+-、又は、>N+<等のカチオン化している原子及び上記原子を含む基)を有さなければ制限はなく、例えば、ハロゲン原子、アルキル基(直鎖状でも分岐鎖状でもよい。炭素数は例えば1~6)、シクロアルキル基(単環でも多環でもよい。炭素数は例えば5~20)、又は、アルコキシ基(直鎖状でも分岐鎖状でもよい。炭素数は例えば1~6)が好ましい。RIは、可能な場合、更なる置換基を有していてもよく、更なる置換基はハロゲン原子(好ましくはフッ素原子)が好ましい。これらの置換基は、ハロゲン原子(例えばフッ素原子)以外の更なる置換基を有さないのも好ましい。例えば、RIは、アルキル基に、更にハロゲン原子が置換した、パーハロゲン化アルキル基(好ましくはパーフルオロアルキル基)でもよい。また、RIは、例えば、シクロアルキルアルコキシ基でもよい。1つのRIの全炭素数(置換基を有する場合は置換基に含まれる炭素原子の数も計上した炭素数)は、1~20が好ましい。
niが2以上の場合、複数存在するRIは互いに結合して非芳香環を形成していてもよい。 In general formula (I), RI represents a substituent having no cationic functional group.
RI, which is a substituent, has a cationic functional group (a cationized atom such as> S + -, -I + -,> C + -, or> N + <and a group containing the above-mentioned atom). If not, there is no limitation, for example, a halogen atom, an alkyl group (which may be linear or branched. The number of carbon atoms is, for example, 1 to 6), and a cycloalkyl group (which may be monocyclic or polycyclic. The number of carbon atoms is, for example, 5). ~ 20) or an alkoxy group (which may be linear or branched; the number of carbon atoms is, for example, 1 to 6) is preferable. The RI may have additional substituents where possible, with the additional substituents preferably a halogen atom (preferably a fluorine atom). It is also preferred that these substituents have no additional substituents other than the halogen atom (eg, fluorine atom). For example, RI may be a perhalogenated alkyl group (preferably a perfluoroalkyl group) in which an alkyl group is further substituted with a halogen atom. The RI may also be, for example, a cycloalkylalkoxy group. The total carbon number of one RI (in the case of having a substituent, the number of carbon atoms including the number of carbon atoms contained in the substituent) is preferably 1 to 20.
When ni is 2 or more, a plurality of RIs may be bonded to each other to form a non-aromatic ring.
置換基であるRIは、カチオン性官能基(>S+-、-I+-、>C+-、又は、>N+<等のカチオン化している原子及び上記原子を含む基)を有さなければ制限はなく、例えば、ハロゲン原子、アルキル基(直鎖状でも分岐鎖状でもよい。炭素数は例えば1~6)、シクロアルキル基(単環でも多環でもよい。炭素数は例えば5~20)、又は、アルコキシ基(直鎖状でも分岐鎖状でもよい。炭素数は例えば1~6)が好ましい。RIは、可能な場合、更なる置換基を有していてもよく、更なる置換基はハロゲン原子(好ましくはフッ素原子)が好ましい。これらの置換基は、ハロゲン原子(例えばフッ素原子)以外の更なる置換基を有さないのも好ましい。例えば、RIは、アルキル基に、更にハロゲン原子が置換した、パーハロゲン化アルキル基(好ましくはパーフルオロアルキル基)でもよい。また、RIは、例えば、シクロアルキルアルコキシ基でもよい。1つのRIの全炭素数(置換基を有する場合は置換基に含まれる炭素原子の数も計上した炭素数)は、1~20が好ましい。
niが2以上の場合、複数存在するRIは互いに結合して非芳香環を形成していてもよい。 In general formula (I), RI represents a substituent having no cationic functional group.
RI, which is a substituent, has a cationic functional group (a cationized atom such as> S + -, -I + -,> C + -, or> N + <and a group containing the above-mentioned atom). If not, there is no limitation, for example, a halogen atom, an alkyl group (which may be linear or branched. The number of carbon atoms is, for example, 1 to 6), and a cycloalkyl group (which may be monocyclic or polycyclic. The number of carbon atoms is, for example, 5). ~ 20) or an alkoxy group (which may be linear or branched; the number of carbon atoms is, for example, 1 to 6) is preferable. The RI may have additional substituents where possible, with the additional substituents preferably a halogen atom (preferably a fluorine atom). It is also preferred that these substituents have no additional substituents other than the halogen atom (eg, fluorine atom). For example, RI may be a perhalogenated alkyl group (preferably a perfluoroalkyl group) in which an alkyl group is further substituted with a halogen atom. The RI may also be, for example, a cycloalkylalkoxy group. The total carbon number of one RI (in the case of having a substituent, the number of carbon atoms including the number of carbon atoms contained in the substituent) is preferably 1 to 20.
When ni is 2 or more, a plurality of RIs may be bonded to each other to form a non-aromatic ring.
化合物(P)が有する2つ以上のカチオン部位は、少なくとも1つ(好ましくは全部)が、一般式(I)で表される基を有する有機カチオンであることが好ましい。以下、一般式(I)で表される基を有する有機カチオンを特定有機カチオンともいう。
特定有機カチオンは、一般式(II)で表される有機カチオン、一般式(III)で表される有機カチオン、又は、一般式(IV)で表される有機カチオンであることが好ましい。
つまり、化合物(P)が、一般式(II)で表される有機カチオン、一般式(III)で表される有機カチオン、及び、一般式(IV)で表される有機カチオンからなる群から選択される1種以上の有機カチオンを有することが好ましい。
一般式(II)~(IV)で表される有機カチオンは、特定の置換基及び構造を有することによって、化合物(P)全体を疎水化している。そのため、酸分解性樹脂との相溶性がより改善されており、本発明の組成物を用いて形成される膜中においても化合物(P)が均一に分散されやすく、LWR性能がより優れる。また、化合物(P)と酸分解性樹脂との相溶性が良好なため、本発明の組成物中での化合物(P)の分散性により優れ、化合物(P)の凝集が生じにくく、優れたLWR性能を発揮しやすく、本発明の効果がより優れる。 It is preferable that at least one (preferably all) of the two or more cation sites of the compound (P) is an organic cation having a group represented by the general formula (I). Hereinafter, the organic cation having a group represented by the general formula (I) is also referred to as a specific organic cation.
The specific organic cation is preferably an organic cation represented by the general formula (II), an organic cation represented by the general formula (III), or an organic cation represented by the general formula (IV).
That is, the compound (P) is selected from the group consisting of an organic cation represented by the general formula (II), an organic cation represented by the general formula (III), and an organic cation represented by the general formula (IV). It is preferable to have one or more kinds of organic cations.
The organic cations represented by the general formulas (II) to (IV) have a specific substituent and structure to make the entire compound (P) hydrophobic. Therefore, the compatibility with the acid-degradable resin is further improved, the compound (P) is easily dispersed uniformly even in the film formed by using the composition of the present invention, and the LWR performance is more excellent. Further, since the compatibility between the compound (P) and the acid-decomposable resin is good, the dispersibility of the compound (P) in the composition of the present invention is excellent, and the compound (P) is less likely to aggregate, which is excellent. The LWR performance is easily exhibited, and the effect of the present invention is more excellent.
特定有機カチオンは、一般式(II)で表される有機カチオン、一般式(III)で表される有機カチオン、又は、一般式(IV)で表される有機カチオンであることが好ましい。
つまり、化合物(P)が、一般式(II)で表される有機カチオン、一般式(III)で表される有機カチオン、及び、一般式(IV)で表される有機カチオンからなる群から選択される1種以上の有機カチオンを有することが好ましい。
一般式(II)~(IV)で表される有機カチオンは、特定の置換基及び構造を有することによって、化合物(P)全体を疎水化している。そのため、酸分解性樹脂との相溶性がより改善されており、本発明の組成物を用いて形成される膜中においても化合物(P)が均一に分散されやすく、LWR性能がより優れる。また、化合物(P)と酸分解性樹脂との相溶性が良好なため、本発明の組成物中での化合物(P)の分散性により優れ、化合物(P)の凝集が生じにくく、優れたLWR性能を発揮しやすく、本発明の効果がより優れる。 It is preferable that at least one (preferably all) of the two or more cation sites of the compound (P) is an organic cation having a group represented by the general formula (I). Hereinafter, the organic cation having a group represented by the general formula (I) is also referred to as a specific organic cation.
The specific organic cation is preferably an organic cation represented by the general formula (II), an organic cation represented by the general formula (III), or an organic cation represented by the general formula (IV).
That is, the compound (P) is selected from the group consisting of an organic cation represented by the general formula (II), an organic cation represented by the general formula (III), and an organic cation represented by the general formula (IV). It is preferable to have one or more kinds of organic cations.
The organic cations represented by the general formulas (II) to (IV) have a specific substituent and structure to make the entire compound (P) hydrophobic. Therefore, the compatibility with the acid-degradable resin is further improved, the compound (P) is easily dispersed uniformly even in the film formed by using the composition of the present invention, and the LWR performance is more excellent. Further, since the compatibility between the compound (P) and the acid-decomposable resin is good, the dispersibility of the compound (P) in the composition of the present invention is excellent, and the compound (P) is less likely to aggregate, which is excellent. The LWR performance is easily exhibited, and the effect of the present invention is more excellent.
・一般式(II)
一般式(II)で表される有機カチオンを以下に示す。 ・ General formula (II)
The organic cation represented by the general formula (II) is shown below.
一般式(II)で表される有機カチオンを以下に示す。 ・ General formula (II)
The organic cation represented by the general formula (II) is shown below.
一般式(II)中、Ar1、Ar2及びAr3は、それぞれ独立に芳香族炭化水素環基を表す。
Ar1、Ar2及びAr3のうち少なくとも1つは-CF3を有する置換基を有する芳香族炭化水素環基を表す。
ただし、Ar1、Ar2及びAr3で表される芳香族炭化水素環基は、いずれも、カチオン性官能基を有する置換基を有さない。 In the general formula (II), Ar 1 , Ar 2 and Ar 3 each independently represent an aromatic hydrocarbon ring group.
At least one of Ar 1 , Ar 2 and Ar 3 represents an aromatic hydrocarbon ring group having a substituent having -CF 3.
However, none of the aromatic hydrocarbon ring groups represented by Ar 1 , Ar 2 and Ar 3 has a substituent having a cationic functional group.
Ar1、Ar2及びAr3のうち少なくとも1つは-CF3を有する置換基を有する芳香族炭化水素環基を表す。
ただし、Ar1、Ar2及びAr3で表される芳香族炭化水素環基は、いずれも、カチオン性官能基を有する置換基を有さない。 In the general formula (II), Ar 1 , Ar 2 and Ar 3 each independently represent an aromatic hydrocarbon ring group.
At least one of Ar 1 , Ar 2 and Ar 3 represents an aromatic hydrocarbon ring group having a substituent having -CF 3.
However, none of the aromatic hydrocarbon ring groups represented by Ar 1 , Ar 2 and Ar 3 has a substituent having a cationic functional group.
上記芳香族炭化水素環基としては、例えば、ベンゼン環基、ナフタレン環基、及び、アントラセン環基が挙げられ、ベンゼン環基が好ましい。
上記芳香族炭化水素環基が有してもよい置換基は、ハロゲン原子、アルキル基、シクロアルキル基、又は、アルコキシ基が好ましい。置換基は1種単独でもよく、2種以上でもよい。
上記アルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記シクロアルキル基は単環でも多環でもよい。上記シクロアルキル基の炭素数は、例えば、5~20である。
上記アルコキシ基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記アルキル基、上記シクロアルキル基、及び、上記アルコキシ基は、それぞれ独立に、更なる置換基を有していてもよい。更なる置換基はハロゲン原子(好ましくはフッ素原子)が好ましい。これらの置換基は、ハロゲン原子(例えばフッ素原子)以外の更なる置換基を有さないのも好ましい。上記アルキル基はパーハロゲン化アルキル基(好ましくはパーフルオロアルキル基)となっていてもよい。
上記芳香族炭化水素環基が置換基を有する場合、上記芳香族炭化水素環基が有する置換基の数は、それぞれ独立に、1~5が好ましい。
一般式(II)中のAr1、Ar2、及び、Ar3のうち、少なくとも1つは置換基を有する芳香族炭化水素環基であり、少なくとも2つ(2つ又は3つ)が置換基を有する芳香族炭化水素環基であることが好ましい。 Examples of the aromatic hydrocarbon ring group include a benzene ring group, a naphthalene ring group, and an anthracene ring group, and a benzene ring group is preferable.
The substituent that the aromatic hydrocarbon ring group may have is preferably a halogen atom, an alkyl group, a cycloalkyl group, or an alkoxy group. The substituent may be one kind alone or two or more kinds.
The alkyl group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The cycloalkyl group may be monocyclic or polycyclic. The cycloalkyl group has, for example, 5 to 20 carbon atoms.
The alkoxy group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The alkyl group, the cycloalkyl group, and the alkoxy group may each independently have an additional substituent. The further substituent is preferably a halogen atom (preferably a fluorine atom). It is also preferred that these substituents have no additional substituents other than the halogen atom (eg, fluorine atom). The alkyl group may be a perhalogenated alkyl group (preferably a perfluoroalkyl group).
When the aromatic hydrocarbon ring group has a substituent, the number of the substituents of the aromatic hydrocarbon ring group is preferably 1 to 5 independently.
Of Ar 1 , Ar 2 , and Ar 3 in the general formula (II), at least one is an aromatic hydrocarbon ring group having a substituent, and at least two (two or three) are substituents. It is preferably an aromatic hydrocarbon ring group having.
上記芳香族炭化水素環基が有してもよい置換基は、ハロゲン原子、アルキル基、シクロアルキル基、又は、アルコキシ基が好ましい。置換基は1種単独でもよく、2種以上でもよい。
上記アルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記シクロアルキル基は単環でも多環でもよい。上記シクロアルキル基の炭素数は、例えば、5~20である。
上記アルコキシ基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記アルキル基、上記シクロアルキル基、及び、上記アルコキシ基は、それぞれ独立に、更なる置換基を有していてもよい。更なる置換基はハロゲン原子(好ましくはフッ素原子)が好ましい。これらの置換基は、ハロゲン原子(例えばフッ素原子)以外の更なる置換基を有さないのも好ましい。上記アルキル基はパーハロゲン化アルキル基(好ましくはパーフルオロアルキル基)となっていてもよい。
上記芳香族炭化水素環基が置換基を有する場合、上記芳香族炭化水素環基が有する置換基の数は、それぞれ独立に、1~5が好ましい。
一般式(II)中のAr1、Ar2、及び、Ar3のうち、少なくとも1つは置換基を有する芳香族炭化水素環基であり、少なくとも2つ(2つ又は3つ)が置換基を有する芳香族炭化水素環基であることが好ましい。 Examples of the aromatic hydrocarbon ring group include a benzene ring group, a naphthalene ring group, and an anthracene ring group, and a benzene ring group is preferable.
The substituent that the aromatic hydrocarbon ring group may have is preferably a halogen atom, an alkyl group, a cycloalkyl group, or an alkoxy group. The substituent may be one kind alone or two or more kinds.
The alkyl group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The cycloalkyl group may be monocyclic or polycyclic. The cycloalkyl group has, for example, 5 to 20 carbon atoms.
The alkoxy group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The alkyl group, the cycloalkyl group, and the alkoxy group may each independently have an additional substituent. The further substituent is preferably a halogen atom (preferably a fluorine atom). It is also preferred that these substituents have no additional substituents other than the halogen atom (eg, fluorine atom). The alkyl group may be a perhalogenated alkyl group (preferably a perfluoroalkyl group).
When the aromatic hydrocarbon ring group has a substituent, the number of the substituents of the aromatic hydrocarbon ring group is preferably 1 to 5 independently.
Of Ar 1 , Ar 2 , and Ar 3 in the general formula (II), at least one is an aromatic hydrocarbon ring group having a substituent, and at least two (two or three) are substituents. It is preferably an aromatic hydrocarbon ring group having.
一般式(II)中のAr1、Ar2、及び、Ar3のうち、少なくとも1つ(1~3つ)は、-CF3を有する置換基を有する芳香族炭化水素環基を表す。
上記-CF3を有する置換基は、置換基そのものが-CF3であってもよいし、置換基全体の中の一部分として-CF3を有していてもよい。
-CF3を有する置換基を有する芳香族炭化水素環基は、-CF3を有する置換基を1~5つ有することが好ましい。
-CF3を有する置換基を有する芳香族炭化水素環基は、-CF3を有さない置換基を更に有していてもよい。
Ar1、Ar2、及び、Ar3のうち、1~2つは-CF3を有する置換基を有さない芳香族炭化水素環基であってもよい。
一般式(II)で表される有機カチオンは、上記芳香族炭化水素環基の環員原子に直接結合する形態で存在する-CF3を1~8つ有することが好ましい。 Of Ar 1 , Ar 2 , and Ar 3 in the general formula (II), at least one (1 to 3) represents an aromatic hydrocarbon ring group having a substituent having −CF 3.
Substituents having the -CF 3 is substituent itself may be a -CF 3, may have a -CF 3 as part of the overall substituent.
Aromatic hydrocarbon ring group having a substituent having a -CF 3 preferably have one to 5 substituent having -CF 3.
Aromatic hydrocarbon ring group having a substituent having a -CF 3 may further have a substituent having no -CF 3.
Of Ar 1 , Ar 2 , and Ar 3 , one or two may be aromatic hydrocarbon ring groups having -CF 3 and having no substituent.
The organic cation represented by the general formula (II) preferably has 1 to 8 −CF 3 existing in a form of being directly bonded to the ring member atom of the aromatic hydrocarbon ring group.
上記-CF3を有する置換基は、置換基そのものが-CF3であってもよいし、置換基全体の中の一部分として-CF3を有していてもよい。
-CF3を有する置換基を有する芳香族炭化水素環基は、-CF3を有する置換基を1~5つ有することが好ましい。
-CF3を有する置換基を有する芳香族炭化水素環基は、-CF3を有さない置換基を更に有していてもよい。
Ar1、Ar2、及び、Ar3のうち、1~2つは-CF3を有する置換基を有さない芳香族炭化水素環基であってもよい。
一般式(II)で表される有機カチオンは、上記芳香族炭化水素環基の環員原子に直接結合する形態で存在する-CF3を1~8つ有することが好ましい。 Of Ar 1 , Ar 2 , and Ar 3 in the general formula (II), at least one (1 to 3) represents an aromatic hydrocarbon ring group having a substituent having −CF 3.
Substituents having the -CF 3 is substituent itself may be a -CF 3, may have a -CF 3 as part of the overall substituent.
Aromatic hydrocarbon ring group having a substituent having a -CF 3 preferably have one to 5 substituent having -CF 3.
Aromatic hydrocarbon ring group having a substituent having a -CF 3 may further have a substituent having no -CF 3.
Of Ar 1 , Ar 2 , and Ar 3 , one or two may be aromatic hydrocarbon ring groups having -CF 3 and having no substituent.
The organic cation represented by the general formula (II) preferably has 1 to 8 −CF 3 existing in a form of being directly bonded to the ring member atom of the aromatic hydrocarbon ring group.
一般式(II)中のAr1、Ar2、及び、Ar3で表される置換基を有してもよい芳香族炭化水素環基は、いずれも、カチオン性官能基を有する置換基を有さない。言い換えると、一般式(II)で表される有機カチオンは、Ar1、Ar2、及び、Ar3と直接結合するS+以外のカチオン性官能基を有さない。
なお、カチオン性官能基を有する置換基は、置換基そのものがカチオン性官能基であってもよいし、置換基全体の中の一部分としてカチオン性官能基を有していてもよい。 The aromatic hydrocarbon ring groups which may have the substituents represented by Ar 1 , Ar 2 , and Ar 3 in the general formula (II) all have a substituent having a cationic functional group. Do not. In other words, the organic cation represented by the general formula (II) has no cationic functional group other than S + that directly binds to Ar 1 , Ar 2 , and Ar 3.
As for the substituent having a cationic functional group, the substituent itself may be a cationic functional group, or the substituent may have a cationic functional group as a part of the whole substituent.
なお、カチオン性官能基を有する置換基は、置換基そのものがカチオン性官能基であってもよいし、置換基全体の中の一部分としてカチオン性官能基を有していてもよい。 The aromatic hydrocarbon ring groups which may have the substituents represented by Ar 1 , Ar 2 , and Ar 3 in the general formula (II) all have a substituent having a cationic functional group. Do not. In other words, the organic cation represented by the general formula (II) has no cationic functional group other than S + that directly binds to Ar 1 , Ar 2 , and Ar 3.
As for the substituent having a cationic functional group, the substituent itself may be a cationic functional group, or the substituent may have a cationic functional group as a part of the whole substituent.
一般式(II)で表される有機カチオンは、後述する一般式(III)で表される有機カチオンとは異なることが好ましい。例えば、一般式(II)で表される有機カチオンは、Ar1、Ar2、及び、Ar3で表される上記芳香族炭化水素環基の環員原子に直接する形態のフッ素原子は有さないのも好ましい。
The organic cation represented by the general formula (II) is preferably different from the organic cation represented by the general formula (III) described later. For example, the organic cation represented by the general formula (II) has a fluorine atom in a form directly connected to the ring member atom of the above aromatic hydrocarbon ring group represented by Ar 1 , Ar 2 , and Ar 3. It is also preferable that there is no such thing.
・一般式(III)
一般式(III)で表される有機カチオンを以下に示す。 ・ General formula (III)
The organic cation represented by the general formula (III) is shown below.
一般式(III)で表される有機カチオンを以下に示す。 ・ General formula (III)
The organic cation represented by the general formula (III) is shown below.
一般式(II)中、Ar4、Ar5及びAr6は、それぞれ独立に芳香族炭化水素環基を表す。
Ar4、Ar5及びAr6のうち少なくとも2つは置換基を有する芳香族炭化水素環基を表す。
Ar4、Ar5及びAr6のうち少なくとも1つは置換基としてフッ素原子を有する芳香族炭化水素環基を表す。
Ar4、Ar5及びAr6のうち少なくとも2つは異なる構造の基を表す。
ただし、Ar4、Ar5及びAr6で表される芳香族炭化水素環基は、いずれも、カチオン性官能基を有する置換基を有さない。 In the general formula (II), Ar 4 , Ar 5 and Ar 6 each independently represent an aromatic hydrocarbon ring group.
At least two of Ar 4 , Ar 5 and Ar 6 represent aromatic hydrocarbon ring groups having substituents.
At least one of Ar 4 , Ar 5 and Ar 6 represents an aromatic hydrocarbon ring group having a fluorine atom as a substituent.
At least two of Ar 4 , Ar 5, and Ar 6 represent groups of different structures.
However, none of the aromatic hydrocarbon ring groups represented by Ar 4 , Ar 5 and Ar 6 has a substituent having a cationic functional group.
Ar4、Ar5及びAr6のうち少なくとも2つは置換基を有する芳香族炭化水素環基を表す。
Ar4、Ar5及びAr6のうち少なくとも1つは置換基としてフッ素原子を有する芳香族炭化水素環基を表す。
Ar4、Ar5及びAr6のうち少なくとも2つは異なる構造の基を表す。
ただし、Ar4、Ar5及びAr6で表される芳香族炭化水素環基は、いずれも、カチオン性官能基を有する置換基を有さない。 In the general formula (II), Ar 4 , Ar 5 and Ar 6 each independently represent an aromatic hydrocarbon ring group.
At least two of Ar 4 , Ar 5 and Ar 6 represent aromatic hydrocarbon ring groups having substituents.
At least one of Ar 4 , Ar 5 and Ar 6 represents an aromatic hydrocarbon ring group having a fluorine atom as a substituent.
At least two of Ar 4 , Ar 5, and Ar 6 represent groups of different structures.
However, none of the aromatic hydrocarbon ring groups represented by Ar 4 , Ar 5 and Ar 6 has a substituent having a cationic functional group.
上記芳香族炭化水素環基が有してもよい置換基は、ハロゲン原子(好ましくはフッ素原子)、アルキル基、シクロアルキル基、又は、アルコキシ基が好ましい。置換基は1種単独でもよく、2種以上でもよい。
上記アルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記シクロアルキル基は単環でも多環でもよい。上記シクロアルキル基の炭素数は、例えば、5~20である。
上記アルコキシ基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記アルキル基、上記シクロアルキル基、及び、上記アルコキシ基は、それぞれ独立に、更なる置換基を有していてもよい。
上記芳香族炭化水素環基が置換基を有する場合、上記芳香族炭化水素環基が有する置換基の数は、それぞれ独立に、1~5が好ましい。
一般式(III)中のAr4、Ar5、及び、Ar6のうち、少なくとも2つ(2つ又は3つ)は置換基を有する芳香族炭化水素環基である。 The substituent that the aromatic hydrocarbon ring group may have is preferably a halogen atom (preferably a fluorine atom), an alkyl group, a cycloalkyl group, or an alkoxy group. The substituent may be one kind alone or two or more kinds.
The alkyl group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The cycloalkyl group may be monocyclic or polycyclic. The cycloalkyl group has, for example, 5 to 20 carbon atoms.
The alkoxy group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The alkyl group, the cycloalkyl group, and the alkoxy group may each independently have an additional substituent.
When the aromatic hydrocarbon ring group has a substituent, the number of the substituents of the aromatic hydrocarbon ring group is preferably 1 to 5 independently.
Of Ar 4 , Ar 5 , and Ar 6 in the general formula (III), at least two (two or three) are aromatic hydrocarbon ring groups having substituents.
上記アルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記シクロアルキル基は単環でも多環でもよい。上記シクロアルキル基の炭素数は、例えば、5~20である。
上記アルコキシ基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記アルキル基、上記シクロアルキル基、及び、上記アルコキシ基は、それぞれ独立に、更なる置換基を有していてもよい。
上記芳香族炭化水素環基が置換基を有する場合、上記芳香族炭化水素環基が有する置換基の数は、それぞれ独立に、1~5が好ましい。
一般式(III)中のAr4、Ar5、及び、Ar6のうち、少なくとも2つ(2つ又は3つ)は置換基を有する芳香族炭化水素環基である。 The substituent that the aromatic hydrocarbon ring group may have is preferably a halogen atom (preferably a fluorine atom), an alkyl group, a cycloalkyl group, or an alkoxy group. The substituent may be one kind alone or two or more kinds.
The alkyl group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The cycloalkyl group may be monocyclic or polycyclic. The cycloalkyl group has, for example, 5 to 20 carbon atoms.
The alkoxy group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The alkyl group, the cycloalkyl group, and the alkoxy group may each independently have an additional substituent.
When the aromatic hydrocarbon ring group has a substituent, the number of the substituents of the aromatic hydrocarbon ring group is preferably 1 to 5 independently.
Of Ar 4 , Ar 5 , and Ar 6 in the general formula (III), at least two (two or three) are aromatic hydrocarbon ring groups having substituents.
また、一般式(III)中のAr4、Ar5、及び、Ar6のうち、少なくとも1つ(好ましくは1~3つ)は、置換基としてフッ素原子を有する芳香族炭化水素環基である。
言い換えると、一般式(III)中のAr4、Ar5、及び、Ar6において、少なくとも2つ(2つ又は3つ)存在する「置換基を有する芳香族炭化水素環基」のうち、少なくとも1つ(2つのうちの1~2つ、又は、3つのうちの1~3つ)は、「置換基としてフッ素原子を有する芳香族炭化水素環基」である。
上記「置換基としてフッ素原子を有する芳香族炭化水素環基」とは、芳香族炭化水素環基における環員原子と直接結合するフッ素原子(置換基そのものであるフッ素原子)を少なくとも1つ(好ましくは1~5つ)有する芳香族炭化水素環基を意味する。
「置換基としてフッ素原子を有する芳香族炭化水素環基」は、フッ素原子である置換基以外の置換基を有していてもよい。 Further, at least one (preferably 1 to 3) of Ar 4 , Ar 5 , and Ar 6 in the general formula (III) is an aromatic hydrocarbon ring group having a fluorine atom as a substituent. ..
In other words, in Ar 4 , Ar 5 , and Ar 6 in the general formula (III), at least two (two or three) "aromatic hydrocarbon ring groups having substituents" are present. One (1 to 2 of 2 or 1 to 3 of 3) is an "aromatic hydrocarbon ring group having a fluorine atom as a substituent".
The above-mentioned "aromatic hydrocarbon ring group having a fluorine atom as a substituent" means at least one fluorine atom (fluorine atom which is the substituent itself) directly bonded to a ring member atom in the aromatic hydrocarbon ring group (preferably). Means an aromatic hydrocarbon ring group having 1 to 5).
The "aromatic hydrocarbon ring group having a fluorine atom as a substituent" may have a substituent other than the substituent which is a fluorine atom.
言い換えると、一般式(III)中のAr4、Ar5、及び、Ar6において、少なくとも2つ(2つ又は3つ)存在する「置換基を有する芳香族炭化水素環基」のうち、少なくとも1つ(2つのうちの1~2つ、又は、3つのうちの1~3つ)は、「置換基としてフッ素原子を有する芳香族炭化水素環基」である。
上記「置換基としてフッ素原子を有する芳香族炭化水素環基」とは、芳香族炭化水素環基における環員原子と直接結合するフッ素原子(置換基そのものであるフッ素原子)を少なくとも1つ(好ましくは1~5つ)有する芳香族炭化水素環基を意味する。
「置換基としてフッ素原子を有する芳香族炭化水素環基」は、フッ素原子である置換基以外の置換基を有していてもよい。 Further, at least one (preferably 1 to 3) of Ar 4 , Ar 5 , and Ar 6 in the general formula (III) is an aromatic hydrocarbon ring group having a fluorine atom as a substituent. ..
In other words, in Ar 4 , Ar 5 , and Ar 6 in the general formula (III), at least two (two or three) "aromatic hydrocarbon ring groups having substituents" are present. One (1 to 2 of 2 or 1 to 3 of 3) is an "aromatic hydrocarbon ring group having a fluorine atom as a substituent".
The above-mentioned "aromatic hydrocarbon ring group having a fluorine atom as a substituent" means at least one fluorine atom (fluorine atom which is the substituent itself) directly bonded to a ring member atom in the aromatic hydrocarbon ring group (preferably). Means an aromatic hydrocarbon ring group having 1 to 5).
The "aromatic hydrocarbon ring group having a fluorine atom as a substituent" may have a substituent other than the substituent which is a fluorine atom.
一般式(III)中のAr4、Ar5、及び、Ar6うち、少なくとも2つは異なる構造の基を表す。言い換えると、Ar4、Ar5、及び、Ar6の全てが、同じ構造の基であることはない。
なお、Ar4、Ar5、及び、Ar6の全てが、同じ構造の基であるとは、例えば、Ar4、Ar5、及び、Ar6の芳香族炭化水素環基がいずれもベンゼン環基であり、かつ、Ar4、Ar5、及び、Ar6のベンゼン環基が有する基の種類及び配置(結合位置)もそれぞれ一致している状態が挙げられる。言い換えると、Ar4、Ar5、及び、Ar6のベンゼン環基が有する基の種類の組み合わせが全て同一であっても、それらの基の配置の全てが同一ではないのであれば、Ar4、Ar5、及び、Ar6の全てが、同じ構造の基とは言わない。 Of Ar 4 , Ar 5 , and Ar 6 in the general formula (III), at least two represent groups having different structures. In other words, Ar 4 , Ar 5 , and Ar 6 are not all based on the same structure.
It should be noted that Ar 4 , Ar 5 , and Ar 6 are all groups having the same structure. For example, the aromatic hydrocarbon ring groups of Ar 4 , Ar 5 , and Ar 6 are all benzene ring groups. In addition, the types and arrangements (bonding positions) of the groups of the benzene ring groups of Ar 4 , Ar 5 , and Ar 6 are also the same. In other words, if all the combinations of group types of the benzene ring groups of Ar 4 , Ar 5 , and Ar 6 are the same, but not all of the arrangements of those groups are the same, then Ar 4 , Not all Ar 5 and Ar 6 are the basis of the same structure.
なお、Ar4、Ar5、及び、Ar6の全てが、同じ構造の基であるとは、例えば、Ar4、Ar5、及び、Ar6の芳香族炭化水素環基がいずれもベンゼン環基であり、かつ、Ar4、Ar5、及び、Ar6のベンゼン環基が有する基の種類及び配置(結合位置)もそれぞれ一致している状態が挙げられる。言い換えると、Ar4、Ar5、及び、Ar6のベンゼン環基が有する基の種類の組み合わせが全て同一であっても、それらの基の配置の全てが同一ではないのであれば、Ar4、Ar5、及び、Ar6の全てが、同じ構造の基とは言わない。 Of Ar 4 , Ar 5 , and Ar 6 in the general formula (III), at least two represent groups having different structures. In other words, Ar 4 , Ar 5 , and Ar 6 are not all based on the same structure.
It should be noted that Ar 4 , Ar 5 , and Ar 6 are all groups having the same structure. For example, the aromatic hydrocarbon ring groups of Ar 4 , Ar 5 , and Ar 6 are all benzene ring groups. In addition, the types and arrangements (bonding positions) of the groups of the benzene ring groups of Ar 4 , Ar 5 , and Ar 6 are also the same. In other words, if all the combinations of group types of the benzene ring groups of Ar 4 , Ar 5 , and Ar 6 are the same, but not all of the arrangements of those groups are the same, then Ar 4 , Not all Ar 5 and Ar 6 are the basis of the same structure.
一般式(III)中のAr4、Ar5、及び、Ar6で表される置換基を有してもよい芳香族炭化水素環基は、いずれも、カチオン性官能基を有する置換基を有さない。言い換えると、一般式(III)で表される有機カチオンは、Ar4、Ar5、及び、Ar6と直接結合するS+以外のカチオン性官能基を有さない。
The aromatic hydrocarbon ring groups which may have a substituent represented by Ar 4 , Ar 5 , and Ar 6 in the general formula (III) all have a substituent having a cationic functional group. Do not. In other words, the organic cation represented by the general formula (III) has no cationic functional group other than S + that directly binds to Ar 4 , Ar 5 , and Ar 6.
一般式(III)で表される有機カチオンは、一般式(II)で表される有機カチオンとは異なることが好ましい。例えば、Ar4、Ar5、及び、Ar6で表される置換基を有してもよい芳香族炭化水素環基は、いずれも、-CF3を有する置換基を有さないのも好ましい。
The organic cation represented by the general formula (III) is preferably different from the organic cation represented by the general formula (II). For example, none of the aromatic hydrocarbon ring groups which may have a substituent represented by Ar 4 , Ar 5 , and Ar 6 preferably has a substituent having −CF 3.
・一般式(IV)
一般式(IV)で表される有機カチオンを以下に示す。 ・ General formula (IV)
The organic cation represented by the general formula (IV) is shown below.
一般式(IV)で表される有機カチオンを以下に示す。 ・ General formula (IV)
The organic cation represented by the general formula (IV) is shown below.
一般式(IV)中、Ar7、Ar8及びAr9は、それぞれ独立に芳香族炭化水素環基を表す。
Ar7、Ar8及びAr9のうち少なくとも1つは、置換基としてアルキル基及び多環のシクロアルキル基からなる群から選択される1種以上の特定炭化水素基を有する芳香族炭化水素環基を表す。
ただし、Ar7、Ar8及びAr9で表される芳香族炭化水素環基は、いずれも、カチオン性官能基を有する置換基を有さない。
Ar7、Ar8及びAr9で表される芳香族炭化水素環基は、いずれも、フッ素原子を有する置換基を有さない。 In the general formula (IV), Ar 7 , Ar 8 and Ar 9 each independently represent an aromatic hydrocarbon ring group.
At least one of Ar 7 , Ar 8 and Ar 9 is an aromatic hydrocarbon ring group having one or more specific hydrocarbon groups selected from the group consisting of an alkyl group and a polycyclic cycloalkyl group as substituents. Represents.
However, none of the aromatic hydrocarbon ring groups represented by Ar 7 , Ar 8 and Ar 9 has a substituent having a cationic functional group.
None of the aromatic hydrocarbon ring groups represented by Ar 7 , Ar 8 and Ar 9 has a substituent having a fluorine atom.
Ar7、Ar8及びAr9のうち少なくとも1つは、置換基としてアルキル基及び多環のシクロアルキル基からなる群から選択される1種以上の特定炭化水素基を有する芳香族炭化水素環基を表す。
ただし、Ar7、Ar8及びAr9で表される芳香族炭化水素環基は、いずれも、カチオン性官能基を有する置換基を有さない。
Ar7、Ar8及びAr9で表される芳香族炭化水素環基は、いずれも、フッ素原子を有する置換基を有さない。 In the general formula (IV), Ar 7 , Ar 8 and Ar 9 each independently represent an aromatic hydrocarbon ring group.
At least one of Ar 7 , Ar 8 and Ar 9 is an aromatic hydrocarbon ring group having one or more specific hydrocarbon groups selected from the group consisting of an alkyl group and a polycyclic cycloalkyl group as substituents. Represents.
However, none of the aromatic hydrocarbon ring groups represented by Ar 7 , Ar 8 and Ar 9 has a substituent having a cationic functional group.
None of the aromatic hydrocarbon ring groups represented by Ar 7 , Ar 8 and Ar 9 has a substituent having a fluorine atom.
上記芳香族炭化水素環基が有してもよい置換基は、フッ素原子以外のハロゲン原子、アルキル基、シクロアルキル基、及び、アルコキシ基が挙げられる。置換基は1種単独でもよく、2種以上でもよい。
上記アルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記シクロアルキル基は単環でも多環でもよい。上記シクロアルキル基の炭素数は、例えば、5~20である。
上記アルコキシ基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記アルキル基、上記シクロアルキル基、及び、上記アルコキシ基は、それぞれ独立に、更なる置換基を有していてもよい。
上記芳香族炭化水素環基が置換基を有する場合、上記芳香族炭化水素環基が有する置換基の数は、それぞれ独立に、1~5が好ましい。 Examples of the substituent that the aromatic hydrocarbon ring group may have include a halogen atom other than the fluorine atom, an alkyl group, a cycloalkyl group, and an alkoxy group. The substituent may be one kind alone or two or more kinds.
The alkyl group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The cycloalkyl group may be monocyclic or polycyclic. The cycloalkyl group has, for example, 5 to 20 carbon atoms.
The alkoxy group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The alkyl group, the cycloalkyl group, and the alkoxy group may each independently have an additional substituent.
When the aromatic hydrocarbon ring group has a substituent, the number of the substituents of the aromatic hydrocarbon ring group is preferably 1 to 5 independently.
上記アルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記シクロアルキル基は単環でも多環でもよい。上記シクロアルキル基の炭素数は、例えば、5~20である。
上記アルコキシ基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
上記アルキル基、上記シクロアルキル基、及び、上記アルコキシ基は、それぞれ独立に、更なる置換基を有していてもよい。
上記芳香族炭化水素環基が置換基を有する場合、上記芳香族炭化水素環基が有する置換基の数は、それぞれ独立に、1~5が好ましい。 Examples of the substituent that the aromatic hydrocarbon ring group may have include a halogen atom other than the fluorine atom, an alkyl group, a cycloalkyl group, and an alkoxy group. The substituent may be one kind alone or two or more kinds.
The alkyl group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The cycloalkyl group may be monocyclic or polycyclic. The cycloalkyl group has, for example, 5 to 20 carbon atoms.
The alkoxy group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The alkyl group, the cycloalkyl group, and the alkoxy group may each independently have an additional substituent.
When the aromatic hydrocarbon ring group has a substituent, the number of the substituents of the aromatic hydrocarbon ring group is preferably 1 to 5 independently.
一般式(IV)中のAr7、Ar8、及び、Ar9のうち、少なくとも1つ(1~3つ)は、置換基として、アルキル基、及び、多環のシクロアルキル基からなる群から選択される1種以上の特定炭化水素基を有する芳香族炭化水素環基である。
特定炭化水素基におけるアルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
特定炭化水素基における多環のシクロアルキル基は、多環であれば特に制限はなく、架橋環系の多環でもよく、縮合環系の多環でもよく、スピロ環系の多環でもよく、これらの系のうちの複数の様式を併せ持つ多環であってもよい。上記多環のシクロアルキル基の環員原子数は8~20が好ましい。上記多環のシクロアルキル基としては、例えば、ノルボルニル基、アダマンチル基、ビシクロオクタニル基、及び、トリシクロ[5、2、1、02,6]デカニルが挙げられ、中でもアダマンチル基が好ましい。
特定炭化水素基は、更なる置換基を有していてもよいし、有していなくてもよい。ただし、上記更なる置換基は、フッ素原子及びフッ素原子を一部に有する基以外である。
特定炭化水素基は、芳香族炭化水素環基の環員原子に直接結合する。
芳香族炭化水素環基が特定炭化水素基を有する場合、その数は、それぞれ独立に、1~5が好ましい。
また、特定炭化水素基を有する芳香族炭化水素環基は、特定炭化水素基以外の置換基を有していてもよいし、有していなくてもよい。 Of Ar 7 , Ar 8 and Ar 9 in the general formula (IV), at least one (1 to 3) consists of a group consisting of an alkyl group and a polycyclic cycloalkyl group as substituents. It is an aromatic hydrocarbon ring group having one or more specific hydrocarbon groups selected.
The alkyl group in the specific hydrocarbon group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The polycyclic cycloalkyl group in the specific hydrocarbon group is not particularly limited as long as it is a polycyclic ring, and may be a polycyclic ring of a crosslinked ring system, a polycyclic ring of a fused ring system, or a polycyclic ring of a spiro ring system. It may be a polycyclic compound having a plurality of modes of these systems. The number of ring-membered atoms of the polycyclic cycloalkyl group is preferably 8 to 20. The cycloalkyl groups of the polycyclic, for example, a norbornyl group, an adamantyl group, a bicyclooctanyl group, and, include tricyclo [5,2,1,0 2,6] decanyl, among others adamantyl group.
The specific hydrocarbon group may or may not have an additional substituent. However, the above-mentioned additional substituents are other than the fluorine atom and the group having a fluorine atom as a part.
The specific hydrocarbon group directly bonds to the ring member atom of the aromatic hydrocarbon ring group.
When the aromatic hydrocarbon ring group has a specific hydrocarbon group, the number thereof is preferably 1 to 5 independently.
Further, the aromatic hydrocarbon ring group having a specific hydrocarbon group may or may not have a substituent other than the specific hydrocarbon group.
特定炭化水素基におけるアルキル基は、直鎖状でも分岐鎖状でもよい。上記アルキル基の炭素数は、例えば、1~6である。
特定炭化水素基における多環のシクロアルキル基は、多環であれば特に制限はなく、架橋環系の多環でもよく、縮合環系の多環でもよく、スピロ環系の多環でもよく、これらの系のうちの複数の様式を併せ持つ多環であってもよい。上記多環のシクロアルキル基の環員原子数は8~20が好ましい。上記多環のシクロアルキル基としては、例えば、ノルボルニル基、アダマンチル基、ビシクロオクタニル基、及び、トリシクロ[5、2、1、02,6]デカニルが挙げられ、中でもアダマンチル基が好ましい。
特定炭化水素基は、更なる置換基を有していてもよいし、有していなくてもよい。ただし、上記更なる置換基は、フッ素原子及びフッ素原子を一部に有する基以外である。
特定炭化水素基は、芳香族炭化水素環基の環員原子に直接結合する。
芳香族炭化水素環基が特定炭化水素基を有する場合、その数は、それぞれ独立に、1~5が好ましい。
また、特定炭化水素基を有する芳香族炭化水素環基は、特定炭化水素基以外の置換基を有していてもよいし、有していなくてもよい。 Of Ar 7 , Ar 8 and Ar 9 in the general formula (IV), at least one (1 to 3) consists of a group consisting of an alkyl group and a polycyclic cycloalkyl group as substituents. It is an aromatic hydrocarbon ring group having one or more specific hydrocarbon groups selected.
The alkyl group in the specific hydrocarbon group may be linear or branched. The alkyl group has, for example, 1 to 6 carbon atoms.
The polycyclic cycloalkyl group in the specific hydrocarbon group is not particularly limited as long as it is a polycyclic ring, and may be a polycyclic ring of a crosslinked ring system, a polycyclic ring of a fused ring system, or a polycyclic ring of a spiro ring system. It may be a polycyclic compound having a plurality of modes of these systems. The number of ring-membered atoms of the polycyclic cycloalkyl group is preferably 8 to 20. The cycloalkyl groups of the polycyclic, for example, a norbornyl group, an adamantyl group, a bicyclooctanyl group, and, include tricyclo [5,2,1,0 2,6] decanyl, among others adamantyl group.
The specific hydrocarbon group may or may not have an additional substituent. However, the above-mentioned additional substituents are other than the fluorine atom and the group having a fluorine atom as a part.
The specific hydrocarbon group directly bonds to the ring member atom of the aromatic hydrocarbon ring group.
When the aromatic hydrocarbon ring group has a specific hydrocarbon group, the number thereof is preferably 1 to 5 independently.
Further, the aromatic hydrocarbon ring group having a specific hydrocarbon group may or may not have a substituent other than the specific hydrocarbon group.
一般式(IV)中のAr7、Ar8、及び、Ar9で表される置換基を有してもよい芳香族炭化水素環基は、いずれも、カチオン性官能基を有する置換基を有さない。言い換えると、一般式(IV)で表される有機カチオンは、Ar7、Ar8、及び、Ar9と直接結合するS+以外のカチオン性官能基を有さない。
The aromatic hydrocarbon ring groups which may have the substituents represented by Ar 7 , Ar 8 and Ar 9 in the general formula (IV) all have a substituent having a cationic functional group. Do not. In other words, the organic cation represented by the general formula (IV) has no cationic functional group other than S + that directly binds to Ar 7 , Ar 8 , and Ar 9.
一般式(IV)中のAr7、Ar8、及び、Ar9で表される置換基を有してもよい芳香族炭化水素環基は、いずれも、フッ素原子を有する置換基を有さない。言い換えると、一般式(IV)で表される有機カチオンは、フッ素原子を有さない。
つまり、一般式(IV)中、のAr7、Ar8、及び、Ar9の芳香族炭化水素環基が有し得る置換基からは、フッ素原子及びフッ素原子を一部に有する基は除外される。 None of the aromatic hydrocarbon ring groups having a substituent represented by Ar 7 , Ar 8 and Ar 9 in the general formula (IV) has a substituent having a fluorine atom. .. In other words, the organic cation represented by the general formula (IV) does not have a fluorine atom.
That is, in the general formula (IV), the fluorine atom and the group having a fluorine atom as a part are excluded from the substituents that the aromatic hydrocarbon ring groups of Ar 7 , Ar 8 and Ar 9 can have. NS.
つまり、一般式(IV)中、のAr7、Ar8、及び、Ar9の芳香族炭化水素環基が有し得る置換基からは、フッ素原子及びフッ素原子を一部に有する基は除外される。 None of the aromatic hydrocarbon ring groups having a substituent represented by Ar 7 , Ar 8 and Ar 9 in the general formula (IV) has a substituent having a fluorine atom. .. In other words, the organic cation represented by the general formula (IV) does not have a fluorine atom.
That is, in the general formula (IV), the fluorine atom and the group having a fluorine atom as a part are excluded from the substituents that the aromatic hydrocarbon ring groups of Ar 7 , Ar 8 and Ar 9 can have. NS.
特定有機カチオンは、上述した一般式(II)~(IV)で表される有機カチオン以外の、その他の特定有機カチオンであってもよい。
例えば、以下の特定有機カチオンが挙げられる。
・上記一般式(PA-1)中のM+についての説明の中で挙げた一般式(ZaII)で表されるカチオンにおいて、R204及びR205の少なくとも一方は、カチオン性官能基を有する置換基を有さず、かつ、ヘテロ原子を有さないアリール基であるカチオン。
・上記一般式(PA-1)中のM+についての説明の中で挙げた一般式(ZaI-3b)で表されるカチオンにおいて、R1c~R5cのうち、少なくとも1つ(1~5つ)は、水素原子以外の基を表し、上記水素原子以外の基はカチオン性官能基を有する置換基でもないカチオン。
・上記一般式(PA-1)中のM+についての説明の中で挙げた一般式(ZaI-4b)で表されるカチオンにおいて、「R13が水素原子以外の基であること」及び「rが1~8の整数を表すこと」の少なくとも一方の要件を満たすカチオン。なお、R13及びR14の各基はカチオン性官能基を有する置換基でもない。 The specific organic cation may be another specific organic cation other than the organic cations represented by the general formulas (II) to (IV) described above.
For example, the following specific organic cations can be mentioned.
-In the cation represented by the general formula (ZaII) mentioned in the description of M + in the above general formula (PA-1) , at least one of R 204 and R 205 is a substitution having a cationic functional group. A cation that is an aryl group that has no group and no heteroatom.
-In the cation represented by the general formula (ZaI-3b) mentioned in the description of M + in the above general formula (PA-1), at least one (1 to 5 ) of R 1c to R 5c. One) represents a group other than a hydrogen atom, and the group other than the hydrogen atom is a cation having a cationic functional group and not a substituent.
-In the cation represented by the general formula (ZaI-4b) mentioned in the explanation of M + in the above general formula (PA-1) , "R 13 is a group other than a hydrogen atom" and " A cation that meets at least one of the requirements of "r represents an integer of 1-8". It should be noted that each group of R 13 and R 14 is not a substituent having a cationic functional group.
例えば、以下の特定有機カチオンが挙げられる。
・上記一般式(PA-1)中のM+についての説明の中で挙げた一般式(ZaII)で表されるカチオンにおいて、R204及びR205の少なくとも一方は、カチオン性官能基を有する置換基を有さず、かつ、ヘテロ原子を有さないアリール基であるカチオン。
・上記一般式(PA-1)中のM+についての説明の中で挙げた一般式(ZaI-3b)で表されるカチオンにおいて、R1c~R5cのうち、少なくとも1つ(1~5つ)は、水素原子以外の基を表し、上記水素原子以外の基はカチオン性官能基を有する置換基でもないカチオン。
・上記一般式(PA-1)中のM+についての説明の中で挙げた一般式(ZaI-4b)で表されるカチオンにおいて、「R13が水素原子以外の基であること」及び「rが1~8の整数を表すこと」の少なくとも一方の要件を満たすカチオン。なお、R13及びR14の各基はカチオン性官能基を有する置換基でもない。 The specific organic cation may be another specific organic cation other than the organic cations represented by the general formulas (II) to (IV) described above.
For example, the following specific organic cations can be mentioned.
-In the cation represented by the general formula (ZaII) mentioned in the description of M + in the above general formula (PA-1) , at least one of R 204 and R 205 is a substitution having a cationic functional group. A cation that is an aryl group that has no group and no heteroatom.
-In the cation represented by the general formula (ZaI-3b) mentioned in the description of M + in the above general formula (PA-1), at least one (1 to 5 ) of R 1c to R 5c. One) represents a group other than a hydrogen atom, and the group other than the hydrogen atom is a cation having a cationic functional group and not a substituent.
-In the cation represented by the general formula (ZaI-4b) mentioned in the explanation of M + in the above general formula (PA-1) , "R 13 is a group other than a hydrogen atom" and " A cation that meets at least one of the requirements of "r represents an integer of 1-8". It should be noted that each group of R 13 and R 14 is not a substituent having a cationic functional group.
化合物(P)が有する2つ以上のカチオン部位(好ましくは有機カチオン、より好ましくは特定有機カチオン)はそれぞれ同一でも異なっていてもよい。
The two or more cation sites (preferably organic cations, more preferably specific organic cations) of compound (P) may be the same or different.
(アニオン部位)
アニオン部位とは、負電荷を帯びた原子又は原子団を含む構造部位であり、例えば、化合物(P)中に存在し得るアニオン性官能基をアニオン部位としてもよい。
化合物(P)は、化合物(P)が有するカチオン部位(好ましくは有機カチオン)と同数のアニオン性官能基を有する有機アニオンを有することが好ましい。
上述の通り、化合物(P)は、2つ以上(好ましくは2つ又は3つ)のカチオン部位、及び、上記カチオン部位と同数のアニオン部位を有する。
つまり、化合物(P)は、2つ以上(好ましくは2つ又は3つ)のアニオン部位(好ましくはアニオン性官能基)を有する。 (Anion site)
The anion moiety is a structural moiety containing a negatively charged atom or atomic group, and for example, an anionic functional group that may be present in the compound (P) may be used as the anion moiety.
The compound (P) preferably has an organic anion having the same number of anionic functional groups as the cation site (preferably an organic cation) of the compound (P).
As described above, compound (P) has two or more (preferably two or three) cation sites and the same number of anion sites as the above cation sites.
That is, compound (P) has two or more (preferably two or three) anionic moieties (preferably anionic functional groups).
アニオン部位とは、負電荷を帯びた原子又は原子団を含む構造部位であり、例えば、化合物(P)中に存在し得るアニオン性官能基をアニオン部位としてもよい。
化合物(P)は、化合物(P)が有するカチオン部位(好ましくは有機カチオン)と同数のアニオン性官能基を有する有機アニオンを有することが好ましい。
上述の通り、化合物(P)は、2つ以上(好ましくは2つ又は3つ)のカチオン部位、及び、上記カチオン部位と同数のアニオン部位を有する。
つまり、化合物(P)は、2つ以上(好ましくは2つ又は3つ)のアニオン部位(好ましくはアニオン性官能基)を有する。 (Anion site)
The anion moiety is a structural moiety containing a negatively charged atom or atomic group, and for example, an anionic functional group that may be present in the compound (P) may be used as the anion moiety.
The compound (P) preferably has an organic anion having the same number of anionic functional groups as the cation site (preferably an organic cation) of the compound (P).
As described above, compound (P) has two or more (preferably two or three) cation sites and the same number of anion sites as the above cation sites.
That is, compound (P) has two or more (preferably two or three) anionic moieties (preferably anionic functional groups).
上記アニオン性官能基としては、例えば、-SO3
-及び-SO3
-を一部分として有する基、-COO-及び-COO-を一部分として有する基、-N--を一部分として有する基、並びに、カルボアニオン(-C-<)を一部分として有する基が挙げられる。
中でも、アニオン部位としては、一般式(B-1)~(B-13)で表される基が好ましい。 Examples of the anionic functional group, for example, -SO 3 - group having as part, -COO - -, and -SO 3 and -COO - groups having as part, -N - - group having as part, and, carbanions (-C - <) include groups having as part.
Among them, as the anion moiety, groups represented by the general formulas (B-1) to (B-13) are preferable.
中でも、アニオン部位としては、一般式(B-1)~(B-13)で表される基が好ましい。 Examples of the anionic functional group, for example, -SO 3 - group having as part, -COO - -, and -SO 3 and -COO - groups having as part, -N - - group having as part, and, carbanions (-C - <) include groups having as part.
Among them, as the anion moiety, groups represented by the general formulas (B-1) to (B-13) are preferable.
一般式(B-1)~(B-13)中、*は結合位置を表す。
なお、一般式(B-12)における*は、-CO-及び-SO2-のいずれでもない基に対する結合位置であるのも好ましい。 In the general formulas (B-1) to (B-13), * represents the bonding position.
It is also preferable that * in the general formula (B-12) is a bond position with respect to a group that is neither -CO- nor -SO 2-.
なお、一般式(B-12)における*は、-CO-及び-SO2-のいずれでもない基に対する結合位置であるのも好ましい。 In the general formulas (B-1) to (B-13), * represents the bonding position.
It is also preferable that * in the general formula (B-12) is a bond position with respect to a group that is neither -CO- nor -SO 2-.
一般式(B-1)~(B-5)、及び(B-12)中、RX1は、有機基を表す。
RX1としては、アルキル基(直鎖状でも分岐鎖状でもよい。炭素数は1~15が好ましい)、シクロアルキル基(単環でも多環でもよい。炭素数は3~20が好ましい)、又は、アリール基(単環でも多環でもよい。炭素数は6~20が好ましい)が好ましい。
なお、一般式(B-5)においてRX1中の、N-と直接結合する原子は、-CO-における炭素原子、及び、-SO2-における硫黄原子のいずれでもないのも好ましい。 In the general formulas (B-1) to (B-5) and (B-12), RX1 represents an organic group.
RX1 includes an alkyl group (which may be linear or branched, preferably having 1 to 15 carbon atoms), a cycloalkyl group (which may be monocyclic or polycyclic, preferably having 3 to 20 carbon atoms). Alternatively, an aryl group (either monocyclic or polycyclic, preferably 6 to 20 carbon atoms) is preferable.
Incidentally, in formula (B-5) in R X1, N - directly attached to atoms and carbon atoms in -CO-, and, -SO 2 - is also preferred not one of sulfur atoms in the.
RX1としては、アルキル基(直鎖状でも分岐鎖状でもよい。炭素数は1~15が好ましい)、シクロアルキル基(単環でも多環でもよい。炭素数は3~20が好ましい)、又は、アリール基(単環でも多環でもよい。炭素数は6~20が好ましい)が好ましい。
なお、一般式(B-5)においてRX1中の、N-と直接結合する原子は、-CO-における炭素原子、及び、-SO2-における硫黄原子のいずれでもないのも好ましい。 In the general formulas (B-1) to (B-5) and (B-12), RX1 represents an organic group.
RX1 includes an alkyl group (which may be linear or branched, preferably having 1 to 15 carbon atoms), a cycloalkyl group (which may be monocyclic or polycyclic, preferably having 3 to 20 carbon atoms). Alternatively, an aryl group (either monocyclic or polycyclic, preferably 6 to 20 carbon atoms) is preferable.
Incidentally, in formula (B-5) in R X1, N - directly attached to atoms and carbon atoms in -CO-, and, -SO 2 - is also preferred not one of sulfur atoms in the.
RX1におけるシクロアルキル基は単環でも多環でもよい。
RX1におけるシクロアルキル基としては、例えば、ノルボルニル基、及び、アダマンチル基が挙げられる。
RX1におけるシクロアルキル基が有してもよい置換基は、アルキル基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~5)が好ましい。
RX1におけるシクロアルキル基の環員原子である炭素原子のうちの1個以上が、カルボニル炭素原子で置き換わっていてもよい。
RX1におけるアルキル基の炭素数は1~10が好ましく、1~5がより好ましい。
RX1におけるアルキル基が有してもよい置換基は、シクロアルキル基、フッ素原子、又は、シアノ基が好ましい。
上記置換基としてのシクロアルキル基の例としては、RX1がシクロアルキル基である場合において説明したシクロアルキル基が同様に挙げられる。
RX1におけるアルキル基が、上記置換基としてのフッ素原子を有する場合、上記アルキル基は、パーフルオロアルキル基となっていてもよい。
また、RX1におけるアルキル基は、1つ以上の-CH2-がカルボニル基で置換されていてもよい。
RX1におけるアリール基はベンゼン環基が好ましい。
RX1におけるアリール基が有してもよい置換基は、アルキル基、フッ素原子、又は、シアノ基が好ましい。上記置換基としてのアルキル基の例としては、RX1がシクロアルキル基である場合において説明したアルキル基が同様に挙げられ、パーフルオロアルキル基が好ましく、パーフルオロメチル基がより好ましい。 The cycloalkyl group in R X1 may be monocyclic or polycyclic.
The cycloalkyl group in R X1, for example, a norbornyl group, and, adamantyl group.
Substituents which may have a cycloalkyl group at R X1 represents an alkyl group (a straight-chain or branched-chain. Preferably 1-5 1 carbon atoms) preferably.
One or more of the carbon atoms are ring member atoms of the cycloalkyl group in R X1 may be replaced by carbonyl carbon atom.
The number of carbon atoms in the alkyl group in R X1 is preferably 1 to 10, 1 to 5 and more preferable.
Substituent which may be possessed by the alkyl group in R X1 is a cycloalkyl group, a fluorine atom, or a cyano group.
Examples of the cycloalkyl group as the substituent include the cycloalkyl group described in the case where RX1 is a cycloalkyl group.
Alkyl group in R X1 is, if they have a fluorine atom as the substituent, the alkyl group may be a perfluoroalkyl group.
The alkyl group in R X1 is one or more -CH 2 - may be substituted with a carbonyl group.
Aryl group in R X1 is a benzene ring group.
Substituent which may be possessed by the aryl group in R X1 is an alkyl group, a fluorine atom, or a cyano group. Examples of the alkyl group as the substituent include the alkyl groups described in the case where RX1 is a cycloalkyl group, and a perfluoroalkyl group is preferable, and a perfluoromethyl group is more preferable.
RX1におけるシクロアルキル基としては、例えば、ノルボルニル基、及び、アダマンチル基が挙げられる。
RX1におけるシクロアルキル基が有してもよい置換基は、アルキル基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~5)が好ましい。
RX1におけるシクロアルキル基の環員原子である炭素原子のうちの1個以上が、カルボニル炭素原子で置き換わっていてもよい。
RX1におけるアルキル基の炭素数は1~10が好ましく、1~5がより好ましい。
RX1におけるアルキル基が有してもよい置換基は、シクロアルキル基、フッ素原子、又は、シアノ基が好ましい。
上記置換基としてのシクロアルキル基の例としては、RX1がシクロアルキル基である場合において説明したシクロアルキル基が同様に挙げられる。
RX1におけるアルキル基が、上記置換基としてのフッ素原子を有する場合、上記アルキル基は、パーフルオロアルキル基となっていてもよい。
また、RX1におけるアルキル基は、1つ以上の-CH2-がカルボニル基で置換されていてもよい。
RX1におけるアリール基はベンゼン環基が好ましい。
RX1におけるアリール基が有してもよい置換基は、アルキル基、フッ素原子、又は、シアノ基が好ましい。上記置換基としてのアルキル基の例としては、RX1がシクロアルキル基である場合において説明したアルキル基が同様に挙げられ、パーフルオロアルキル基が好ましく、パーフルオロメチル基がより好ましい。 The cycloalkyl group in R X1 may be monocyclic or polycyclic.
The cycloalkyl group in R X1, for example, a norbornyl group, and, adamantyl group.
Substituents which may have a cycloalkyl group at R X1 represents an alkyl group (a straight-chain or branched-chain. Preferably 1-5 1 carbon atoms) preferably.
One or more of the carbon atoms are ring member atoms of the cycloalkyl group in R X1 may be replaced by carbonyl carbon atom.
The number of carbon atoms in the alkyl group in R X1 is preferably 1 to 10, 1 to 5 and more preferable.
Substituent which may be possessed by the alkyl group in R X1 is a cycloalkyl group, a fluorine atom, or a cyano group.
Examples of the cycloalkyl group as the substituent include the cycloalkyl group described in the case where RX1 is a cycloalkyl group.
Alkyl group in R X1 is, if they have a fluorine atom as the substituent, the alkyl group may be a perfluoroalkyl group.
The alkyl group in R X1 is one or more -CH 2 - may be substituted with a carbonyl group.
Aryl group in R X1 is a benzene ring group.
Substituent which may be possessed by the aryl group in R X1 is an alkyl group, a fluorine atom, or a cyano group. Examples of the alkyl group as the substituent include the alkyl groups described in the case where RX1 is a cycloalkyl group, and a perfluoroalkyl group is preferable, and a perfluoromethyl group is more preferable.
一般式(B-7)及び(B-11)中、RX2は、水素原子、又は、フッ素原子及びパーフルオロアルキル基以外の置換基を表す。
RX2で表されるフッ素原子及びパーフルオロアルキル基以外の置換基は、パーフルオロアルキル基以外のアルキル基、又は、シクロアルキル基が好ましい。
上記アルキル基の例としては、RX1におけるアルキル基からパーフルオロアルキル基を除いたアルキル基が挙げられる。また、上記アルキル基はフッ素原子を有さないことが好ましい。
上記シクロアルキル基の例としては、RX1におけるシクロアルキル基が挙げられる。
また、上記シクロアルキル基はフッ素原子を有さないことが好ましい。 In the general formulas (B-7) and (B-11), RX2 represents a hydrogen atom or a substituent other than a fluorine atom and a perfluoroalkyl group.
Substituent other than fluorine atom and a perfluoroalkyl group represented by R X2 is an alkyl group other than a perfluoroalkyl group, or a cycloalkyl group are preferable.
Examples of the alkyl groups include alkyl groups other than the perfluoroalkyl group from the alkyl group for R X1. Further, it is preferable that the alkyl group does not have a fluorine atom.
Examples of the cycloalkyl groups include cycloalkyl groups in R X1.
Further, it is preferable that the cycloalkyl group does not have a fluorine atom.
RX2で表されるフッ素原子及びパーフルオロアルキル基以外の置換基は、パーフルオロアルキル基以外のアルキル基、又は、シクロアルキル基が好ましい。
上記アルキル基の例としては、RX1におけるアルキル基からパーフルオロアルキル基を除いたアルキル基が挙げられる。また、上記アルキル基はフッ素原子を有さないことが好ましい。
上記シクロアルキル基の例としては、RX1におけるシクロアルキル基が挙げられる。
また、上記シクロアルキル基はフッ素原子を有さないことが好ましい。 In the general formulas (B-7) and (B-11), RX2 represents a hydrogen atom or a substituent other than a fluorine atom and a perfluoroalkyl group.
Substituent other than fluorine atom and a perfluoroalkyl group represented by R X2 is an alkyl group other than a perfluoroalkyl group, or a cycloalkyl group are preferable.
Examples of the alkyl groups include alkyl groups other than the perfluoroalkyl group from the alkyl group for R X1. Further, it is preferable that the alkyl group does not have a fluorine atom.
Examples of the cycloalkyl groups include cycloalkyl groups in R X1.
Further, it is preferable that the cycloalkyl group does not have a fluorine atom.
一般式(B-8)中、RXF1は、水素原子、フッ素原子、又は、パーフルオロアルキル基を表す。ただし、複数のRXF1のうち、少なくとも1つはフッ素原子又はパーフルオロアルキル基を表す。
RXF1で表されるパーフルオロアルキル基の炭素数は1~15が好ましく、1~10がより好ましく、1~6が更に好ましい。 In the general formula (B-8), RXF1 represents a hydrogen atom, a fluorine atom, or a perfluoroalkyl group. However, at least one of the plurality of RXF1 represents a fluorine atom or a perfluoroalkyl group.
The perfluoroalkyl group represented by RXF1 preferably has 1 to 15 carbon atoms, more preferably 1 to 10 carbon atoms, and even more preferably 1 to 6 carbon atoms.
RXF1で表されるパーフルオロアルキル基の炭素数は1~15が好ましく、1~10がより好ましく、1~6が更に好ましい。 In the general formula (B-8), RXF1 represents a hydrogen atom, a fluorine atom, or a perfluoroalkyl group. However, at least one of the plurality of RXF1 represents a fluorine atom or a perfluoroalkyl group.
The perfluoroalkyl group represented by RXF1 preferably has 1 to 15 carbon atoms, more preferably 1 to 10 carbon atoms, and even more preferably 1 to 6 carbon atoms.
一般式(B-10)中、RXF2は、フッ素原子又はパーフルオロアルキル基を表す。
RXF2で表されるパーフルオロアルキル基の炭素数は1~15が好ましく、1~10がより好ましく、1~6が更に好ましい。 In the general formula (B-10), RXF2 represents a fluorine atom or a perfluoroalkyl group.
The perfluoroalkyl group represented by RXF2 preferably has 1 to 15 carbon atoms, more preferably 1 to 10 carbon atoms, and even more preferably 1 to 6 carbon atoms.
RXF2で表されるパーフルオロアルキル基の炭素数は1~15が好ましく、1~10がより好ましく、1~6が更に好ましい。 In the general formula (B-10), RXF2 represents a fluorine atom or a perfluoroalkyl group.
The perfluoroalkyl group represented by RXF2 preferably has 1 to 15 carbon atoms, more preferably 1 to 10 carbon atoms, and even more preferably 1 to 6 carbon atoms.
一般式(B-9)中、nは、0~4の整数を表す。
In the general formula (B-9), n represents an integer of 0 to 4.
化合物(P)は、少なくとも2種(好ましくは一般式(B-1)~(B-13)から選択される2種)のアニオン性官能基を有することが好ましい。この場合、化合物(P)が有するアニオン性官能基の組み合わせとしては特に制限されない。
例えば、化合物(P)が一般式(B-8)又は(B-10)で表される基を有する場合に、更に、一般式(B-1)~(B-7)、(B-9)、又は(B-11)~(B-13)で表される基を有してもよい。また、化合物(P)が一般式(B-7)で表される基である場合に、更に、一般式(B-6)で表される基を有してもよい。これらの化合物(P)が、更に異なるアニオン性官能基を有していてもよい。 Compound (P) preferably has at least two anionic functional groups (preferably two selected from the general formulas (B-1) to (B-13)). In this case, the combination of the anionic functional groups of the compound (P) is not particularly limited.
For example, when the compound (P) has a group represented by the general formula (B-8) or (B-10), the general formulas (B-1) to (B-7), (B-9) are further added. ) Or may have a group represented by (B-11) to (B-13). Further, when the compound (P) is a group represented by the general formula (B-7), it may further have a group represented by the general formula (B-6). These compounds (P) may have further different anionic functional groups.
例えば、化合物(P)が一般式(B-8)又は(B-10)で表される基を有する場合に、更に、一般式(B-1)~(B-7)、(B-9)、又は(B-11)~(B-13)で表される基を有してもよい。また、化合物(P)が一般式(B-7)で表される基である場合に、更に、一般式(B-6)で表される基を有してもよい。これらの化合物(P)が、更に異なるアニオン性官能基を有していてもよい。 Compound (P) preferably has at least two anionic functional groups (preferably two selected from the general formulas (B-1) to (B-13)). In this case, the combination of the anionic functional groups of the compound (P) is not particularly limited.
For example, when the compound (P) has a group represented by the general formula (B-8) or (B-10), the general formulas (B-1) to (B-7), (B-9) are further added. ) Or may have a group represented by (B-11) to (B-13). Further, when the compound (P) is a group represented by the general formula (B-7), it may further have a group represented by the general formula (B-6). These compounds (P) may have further different anionic functional groups.
中でも、化合物(P)がアニオン部位として、アニオン部位AB
-(アニオン性官能基AB
-)を有することが好ましい。
アニオン部位AB -(アニオン性官能基AB -)は、一般式(BX-1)~(BX-4)のいずれかで表される基である。 Among them, the compound (P) is anionic part, anionic sites A B - preferably has a - (anionic functional group A B).
Anionic part A B - (anionic functional groups A B -) is a group represented by any one of formulas (BX-1) ~ (BX -4).
アニオン部位AB -(アニオン性官能基AB -)は、一般式(BX-1)~(BX-4)のいずれかで表される基である。 Among them, the compound (P) is anionic part, anionic sites A B - preferably has a - (anionic functional group A B).
Anionic part A B - (anionic functional groups A B -) is a group represented by any one of formulas (BX-1) ~ (BX -4).
一般式(BX-1)~(BX-4)中、*は、結合位置を表す。
一般式(BX-1)~(BX-4)中、RBは、有機基を表す。
RBにおける有機基の例としては、一般式(B-1)~(B-5)、及び(B-12)におけるRX1の有機基の例が同様に挙げられる。 In the general formulas (BX-1) to (BX-4), * represents a bonding position.
In the general formula (BX-1) ~ (BX -4), R B represents an organic group.
Examples of the organic group for R B has the general formula (B-1) ~ (B -5), and examples of the organic group R X1 can be mentioned as well in (B-12).
一般式(BX-1)~(BX-4)中、RBは、有機基を表す。
RBにおける有機基の例としては、一般式(B-1)~(B-5)、及び(B-12)におけるRX1の有機基の例が同様に挙げられる。 In the general formulas (BX-1) to (BX-4), * represents a bonding position.
In the general formula (BX-1) ~ (BX -4), R B represents an organic group.
Examples of the organic group for R B has the general formula (B-1) ~ (B -5), and examples of the organic group R X1 can be mentioned as well in (B-12).
また、化合物(P)は、アニオン部位として、上記アニオン部位AB
-(アニオン性官能基AB
-)に加えて、更に、アニオン部位AA
-(アニオン性官能基AA
-)を有することが好ましい。
アニオン部位AA -(アニオン性官能基AA -)は、一般式(AX-1)~(AX-2)のいずれかで表される基である。 Further, compound (P) as an anion site, the anionic sites A B - in addition to further anionic sites A A - (anionic functional group A B) - (anionic functional group A A -) to have Is preferable.
Anionic part A A - (anionic functional group A A -) is a group represented by any one of formulas (AX-1) ~ (AX -2).
アニオン部位AA -(アニオン性官能基AA -)は、一般式(AX-1)~(AX-2)のいずれかで表される基である。 Further, compound (P) as an anion site, the anionic sites A B - in addition to further anionic sites A A - (anionic functional group A B) - (anionic functional group A A -) to have Is preferable.
Anionic part A A - (anionic functional group A A -) is a group represented by any one of formulas (AX-1) ~ (AX -2).
一般式(AX-1)~(AX-2)中、*は、結合位置を表す。
一般式(AX-2)中、RAは、有機基を表す。
RAは、アルキル基が好ましい。
上記アルキル基は、直鎖状でも分岐鎖状でもよい。
上記アルキル基の炭素数は1~10が好ましく、1~5がより好ましい。
上記アルキル基が有してもよい置換基は、フッ素原子が好ましい。
置換基としてフッ素原子を有する上記アルキル基は、パーフルオロアルキル基となっていてもよいし、ならなくてもよい。
In the general formulas (AX-1) to (AX-2), * represents a bonding position.
In the general formula (AX-2), RA represents an organic group.
RA is preferably an alkyl group.
The alkyl group may be linear or branched.
The alkyl group preferably has 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms.
The substituent that the alkyl group may have is preferably a fluorine atom.
The alkyl group having a fluorine atom as a substituent may or may not be a perfluoroalkyl group.
化合物(P)は、アニオン部位として、上記アニオン部位AB
-(アニオン性官能基AB
-)、及び、上記アニオン部位AA
-(アニオン性官能基AA
-)に加えて、更なるアニオン部位(好ましくは更なるアニオン性官能基)を有していてもよいし、有していなくてもよい。
Compound (P) as anionic sites, the anionic sites A B - (anionic functional groups A B -), and, the anionic part A A - (anionic functional group A A -) in addition to a further anion It may or may not have a site (preferably an additional anionic functional group).
(化合物(P)の構成)
化合物(P)は、一般式(AD0)で表される化合物が好ましい。
L0-(A0 -)nk (M0 +)nk 一般式(AD0) (Structure of compound (P))
The compound (P) is preferably a compound represented by the general formula (AD0).
L 0 - (A 0 -) nk (M 0 +) nk formula (AD0)
化合物(P)は、一般式(AD0)で表される化合物が好ましい。
L0-(A0 -)nk (M0 +)nk 一般式(AD0) (Structure of compound (P))
The compound (P) is preferably a compound represented by the general formula (AD0).
L 0 - (A 0 -) nk (M 0 +) nk formula (AD0)
一般式(AD0)中、nkは、2以上の整数を表す。
nkは、2~10が好ましく、2~3がより好ましい。
一般式(AD0)中に2つ存在するnkは、それぞれ同一の値である。 In the general formula (AD0), nk represents an integer of 2 or more.
The nk is preferably 2 to 10, more preferably 2 to 3.
The two nks existing in the general formula (AD0) have the same value.
nkは、2~10が好ましく、2~3がより好ましい。
一般式(AD0)中に2つ存在するnkは、それぞれ同一の値である。 In the general formula (AD0), nk represents an integer of 2 or more.
The nk is preferably 2 to 10, more preferably 2 to 3.
The two nks existing in the general formula (AD0) have the same value.
一般式(AD0)中、L0は、nk価の連結基を表す。
ただし、nkが2の場合、L0は、単結合又は2価の連結基を表す。
上記2価の有機基としては、例えば、-COO-、-CONH-、-CO-、-O-、アルキレン基(好ましくは炭素数1~6。直鎖状でも分岐鎖状でもよい)、シクロアルキレン基(好ましくは炭素数3~15)、アルケニレン基(好ましくは炭素数2~6)、及びこれらの複数を組み合わせた2価の連結基等が挙げられる。
上記シクロアルキレン基のシクロアルカン環を構成するメチレン基の1個以上が、カルボニル炭素及び/又はヘテロ原子(酸素原子等)で置き換わっていてもよい。
これらの2価の連結基は、更に、-S-、-SO-、-SO2-、及び、-NRN-(RNは水素原子又は置換基)からなる群から選択される基を有するのも好ましい。
nk価の連結基としては、例えば、単結合及び/又は上記2価の連結基がとり得る各基と、-CRnk<、-N<、>C<、3価以上の炭化水素環基、及び/又は、3価以上の複素環基とが組み合わせられた基が挙げられる。Rnkは水素原子又は置換基を表す。
L0が単結合以外の場合、L0を構成する水素原子以外の原子の合計数は1~100が好ましく、1~50がより好ましい。 In the general formula (AD0), L 0 represents a nk-valent linking group.
However, when nk is 2, L 0 represents a single bond or a divalent linking group.
Examples of the divalent organic group include -COO-, -CONH-, -CO-, -O-, an alkylene group (preferably 1 to 6 carbon atoms, which may be linear or branched), and cyclo. Examples thereof include an alkylene group (preferably 3 to 15 carbon atoms), an alkenylene group (preferably 2 to 6 carbon atoms), and a divalent linking group obtained by combining a plurality of these groups.
One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a carbonyl carbon and / or a hetero atom (oxygen atom or the like).
These divalent linking groups may further, -S -, - SO -, - SO 2 -, and, -NR N - has the (R N represents a hydrogen atom or a substituent) group is selected from the group consisting of Is also preferable.
Examples of the nk-valent linking group include a single bond and / or each group that the divalent linking group can take, and -CR nk <, -N <,> C <, a trivalent or higher valent hydrocarbon ring group. And / or a group in which a trivalent or higher valent heterocyclic group is combined can be mentioned. R nk represents a hydrogen atom or a substituent.
When L 0 is other than a single bond, the total number of atoms other than hydrogen atoms constituting L 0 is preferably 1 to 100, more preferably 1 to 50.
ただし、nkが2の場合、L0は、単結合又は2価の連結基を表す。
上記2価の有機基としては、例えば、-COO-、-CONH-、-CO-、-O-、アルキレン基(好ましくは炭素数1~6。直鎖状でも分岐鎖状でもよい)、シクロアルキレン基(好ましくは炭素数3~15)、アルケニレン基(好ましくは炭素数2~6)、及びこれらの複数を組み合わせた2価の連結基等が挙げられる。
上記シクロアルキレン基のシクロアルカン環を構成するメチレン基の1個以上が、カルボニル炭素及び/又はヘテロ原子(酸素原子等)で置き換わっていてもよい。
これらの2価の連結基は、更に、-S-、-SO-、-SO2-、及び、-NRN-(RNは水素原子又は置換基)からなる群から選択される基を有するのも好ましい。
nk価の連結基としては、例えば、単結合及び/又は上記2価の連結基がとり得る各基と、-CRnk<、-N<、>C<、3価以上の炭化水素環基、及び/又は、3価以上の複素環基とが組み合わせられた基が挙げられる。Rnkは水素原子又は置換基を表す。
L0が単結合以外の場合、L0を構成する水素原子以外の原子の合計数は1~100が好ましく、1~50がより好ましい。 In the general formula (AD0), L 0 represents a nk-valent linking group.
However, when nk is 2, L 0 represents a single bond or a divalent linking group.
Examples of the divalent organic group include -COO-, -CONH-, -CO-, -O-, an alkylene group (preferably 1 to 6 carbon atoms, which may be linear or branched), and cyclo. Examples thereof include an alkylene group (preferably 3 to 15 carbon atoms), an alkenylene group (preferably 2 to 6 carbon atoms), and a divalent linking group obtained by combining a plurality of these groups.
One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a carbonyl carbon and / or a hetero atom (oxygen atom or the like).
These divalent linking groups may further, -S -, - SO -, - SO 2 -, and, -NR N - has the (R N represents a hydrogen atom or a substituent) group is selected from the group consisting of Is also preferable.
Examples of the nk-valent linking group include a single bond and / or each group that the divalent linking group can take, and -CR nk <, -N <,> C <, a trivalent or higher valent hydrocarbon ring group. And / or a group in which a trivalent or higher valent heterocyclic group is combined can be mentioned. R nk represents a hydrogen atom or a substituent.
When L 0 is other than a single bond, the total number of atoms other than hydrogen atoms constituting L 0 is preferably 1 to 100, more preferably 1 to 50.
一般式(AD0)中、A0
-は、アニオン性官能基を表す。アニオン性官能基については上述の通りである。複数存在するA0
-は、それぞれ同一でも異なっていてもよい。
複数存在するA0 -は、例えば、「一般式(B-8)又は(B-10)で表される基と、一般式(B-1)~(B-7)、(B-9)、又は(B-11)~(B-13)で表される基」を少なくとも有していてもよく、「一般式(B-7)で表される基と、一般式(B-6)で表される基」を少なくとも有していてもよく、「一般式(BX-1)~(BX-4)のいずれかで表される基と、一般式(AX-1)~(AX-2)のいずれかで表される基」を少なくとも有していてもよい。 In the general formula (AD0), A 0 - represents an anionic functional group. The anionic functional groups are as described above. More existing A 0 - may each be the same or different.
A plurality of A 0 - are, for example, "a group represented by the general formula (B-8) or (B-10) and the general formulas (B-1) to (B-7), (B-9). Or, it may have at least a group represented by (B-11) to (B-13), and a group represented by the general formula (B-7) and a group represented by the general formula (B-6). It may have at least a group represented by, and a group represented by any of the general formulas (BX-1) to (BX-4) and the general formulas (AX-1) to (AX-). It may have at least a group represented by any of 2).
複数存在するA0 -は、例えば、「一般式(B-8)又は(B-10)で表される基と、一般式(B-1)~(B-7)、(B-9)、又は(B-11)~(B-13)で表される基」を少なくとも有していてもよく、「一般式(B-7)で表される基と、一般式(B-6)で表される基」を少なくとも有していてもよく、「一般式(BX-1)~(BX-4)のいずれかで表される基と、一般式(AX-1)~(AX-2)のいずれかで表される基」を少なくとも有していてもよい。 In the general formula (AD0), A 0 - represents an anionic functional group. The anionic functional groups are as described above. More existing A 0 - may each be the same or different.
A plurality of A 0 - are, for example, "a group represented by the general formula (B-8) or (B-10) and the general formulas (B-1) to (B-7), (B-9). Or, it may have at least a group represented by (B-11) to (B-13), and a group represented by the general formula (B-7) and a group represented by the general formula (B-6). It may have at least a group represented by, and a group represented by any of the general formulas (BX-1) to (BX-4) and the general formulas (AX-1) to (AX-). It may have at least a group represented by any of 2).
一般式(AD0)中、M0
+は、有機カチオン(特定有機カチオン、又は、特定有機カチオン以外の有機カチオン)を表す。
nk個のM0 +のうち少なくとも1個(好ましくは全部)は特定有機カチオンを表すことが好ましい。
特定有機カチオンについては上述の通りである。
特定有機カチオン以外の有機カチオンについても上述の通りである。
複数存在するM0 +は、それぞれ同一でも異なっていてもよい。 In the general formula (AD0), M 0 + is an organic cation (specific organic cation, or an organic cation other than the specific organic cation) represents a.
nk number of M 0 + at least one of the (preferably all) preferably represents a specific organic cation.
The specific organic cation is as described above.
The same applies to organic cations other than the specific organic cations.
A plurality of M 0 + may be the same or different from each other.
nk個のM0 +のうち少なくとも1個(好ましくは全部)は特定有機カチオンを表すことが好ましい。
特定有機カチオンについては上述の通りである。
特定有機カチオン以外の有機カチオンについても上述の通りである。
複数存在するM0 +は、それぞれ同一でも異なっていてもよい。 In the general formula (AD0), M 0 + is an organic cation (specific organic cation, or an organic cation other than the specific organic cation) represents a.
nk number of M 0 + at least one of the (preferably all) preferably represents a specific organic cation.
The specific organic cation is as described above.
The same applies to organic cations other than the specific organic cations.
A plurality of M 0 + may be the same or different from each other.
また、化合物(P)は、化合物(I)、化合物(II)、又は、化合物(III)であることが好ましい。
以下、化合物(I)~(III)について説明する。 Further, the compound (P) is preferably compound (I), compound (II), or compound (III).
Hereinafter, compounds (I) to (III) will be described.
以下、化合物(I)~(III)について説明する。 Further, the compound (P) is preferably compound (I), compound (II), or compound (III).
Hereinafter, compounds (I) to (III) will be described.
・化合物(I)
化合物(I)について説明する。
化合物(I)は下記化合物である。
化合物(I):下記構造部位Xと下記構造部位Yとを各々1つずつ有する化合物であって、活性光線又は放射線の照射によって、下記構造部位Xに由来する下記第1の酸性部位と下記構造部位Yに由来する下記第2の酸性部位とを含む酸を発生する化合物 -Compound (I)
Compound (I) will be described.
Compound (I) is the following compound.
Compound (I): A compound having one of the following structural sites X and one of the following structural sites Y, and the following first acidic site and the following structure derived from the following structural site X by irradiation with active light or radiation. A compound that generates an acid containing the following second acidic moiety derived from the moiety Y
化合物(I)について説明する。
化合物(I)は下記化合物である。
化合物(I):下記構造部位Xと下記構造部位Yとを各々1つずつ有する化合物であって、活性光線又は放射線の照射によって、下記構造部位Xに由来する下記第1の酸性部位と下記構造部位Yに由来する下記第2の酸性部位とを含む酸を発生する化合物 -Compound (I)
Compound (I) will be described.
Compound (I) is the following compound.
Compound (I): A compound having one of the following structural sites X and one of the following structural sites Y, and the following first acidic site and the following structure derived from the following structural site X by irradiation with active light or radiation. A compound that generates an acid containing the following second acidic moiety derived from the moiety Y
構造部位X:アニオン部位A1
-とカチオン部位M1
+とからなり、かつ、活性光線又は放射線の照射によってHA1で表される第1の酸性部位を形成する構造部位
構造部位Y:アニオン部位A2 -とカチオン部位M2 +とからなり、かつ、活性光線又は放射線の照射によって、上記構造部位Xにて形成される上記第1の酸性部位とは異なる構造のHA2で表される第2の酸性部位を形成する構造部位 Structural part X: Structural part consisting of anionic part A 1 − and cation part M 1 + , and forming the first acidic part represented by HA 1 by irradiation with active light or radiation Structural part Y: Anion part a 2 - consists of a cationic sites M 2 + and, and, by irradiation with actinic rays or radiation, the represented by HA 2 having a structure different from that of the first acidic site formed by the above structural moiety X Structural part forming the acidic part of 2
構造部位Y:アニオン部位A2 -とカチオン部位M2 +とからなり、かつ、活性光線又は放射線の照射によって、上記構造部位Xにて形成される上記第1の酸性部位とは異なる構造のHA2で表される第2の酸性部位を形成する構造部位 Structural part X: Structural part consisting of anionic part A 1 − and cation part M 1 + , and forming the first acidic part represented by HA 1 by irradiation with active light or radiation Structural part Y: Anion part a 2 - consists of a cationic sites M 2 + and, and, by irradiation with actinic rays or radiation, the represented by HA 2 having a structure different from that of the first acidic site formed by the above structural moiety X Structural part forming the acidic part of 2
ただし、化合物(I)は、下記条件Iを満たす。
条件I:上記化合物(I)において上記構造部位X中の上記カチオン部位M1 +及び上記構造部位Y中の上記カチオン部位M2 +をH+に置き換えてなる化合物PIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数a1と、上記構造部位Y中の上記カチオン部位M2 +をH+に置き換えてなるHA2で表される酸性部位に由来する酸解離定数a2を有し、かつ、上記酸解離定数a1よりも上記酸解離定数a2の方が大きい。
なお、酸解離定数a1及び酸解離定数a2は、上述した方法により求められる。化合物PIの酸解離定数a1及び酸解離定数a2とは、より具体的に説明すると、化合物PIの酸解離定数を求めた場合において、化合物PI(化合物PIは、「HA1とHA2を有する化合物」に該当する。)が「A1 -とHA2を有する化合物」となる際のpKaが酸解離定数a1であり、上記「A1 -とHA2を有する化合物」が「A1 -とA2 -を有する化合物」となる際のpKaが酸解離定数a2である。
また、上記化合物PIとは、化合物(I)に活性光線又は放射線を照射することにより発生する酸に該当する。 However, compound (I) satisfies the following condition I.
Condition I: In the compound (I), the compound PI obtained by replacing the cation site M 1 + in the structural site X and the cation site M 2 + in the structural site Y with H + is contained in the structural site X. The acid dissociation constant a1 derived from the acidic site represented by HA 1 , which is obtained by replacing the above-mentioned cation site M 1 + with H + , and the above-mentioned cation site M 2 + in the above-mentioned structural part Y are replaced with H +. It has an acid dissociation constant a2 derived from an acidic moiety represented by HA 2 , and the acid dissociation constant a2 is larger than the acid dissociation constant a1.
The acid dissociation constant a1 and the acid dissociation constant a2 are obtained by the above-mentioned method. More specifically, the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI refer to the compound PI (the compound PI is a compound having HA 1 and HA 2) when the acid dissociation constant of the compound PI is obtained. . corresponding to ") is" a 1 - and pKa when a compound "having a HA 2 is the acid dissociation constant a1, the" a 1 - a compound having an HA 2 "is" a 1 - and a 2 - pKa when a compound "having a is an acid dissociation constant a2.
Further, the compound PI corresponds to an acid generated by irradiating compound (I) with active light or radiation.
条件I:上記化合物(I)において上記構造部位X中の上記カチオン部位M1 +及び上記構造部位Y中の上記カチオン部位M2 +をH+に置き換えてなる化合物PIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数a1と、上記構造部位Y中の上記カチオン部位M2 +をH+に置き換えてなるHA2で表される酸性部位に由来する酸解離定数a2を有し、かつ、上記酸解離定数a1よりも上記酸解離定数a2の方が大きい。
なお、酸解離定数a1及び酸解離定数a2は、上述した方法により求められる。化合物PIの酸解離定数a1及び酸解離定数a2とは、より具体的に説明すると、化合物PIの酸解離定数を求めた場合において、化合物PI(化合物PIは、「HA1とHA2を有する化合物」に該当する。)が「A1 -とHA2を有する化合物」となる際のpKaが酸解離定数a1であり、上記「A1 -とHA2を有する化合物」が「A1 -とA2 -を有する化合物」となる際のpKaが酸解離定数a2である。
また、上記化合物PIとは、化合物(I)に活性光線又は放射線を照射することにより発生する酸に該当する。 However, compound (I) satisfies the following condition I.
Condition I: In the compound (I), the compound PI obtained by replacing the cation site M 1 + in the structural site X and the cation site M 2 + in the structural site Y with H + is contained in the structural site X. The acid dissociation constant a1 derived from the acidic site represented by HA 1 , which is obtained by replacing the above-mentioned cation site M 1 + with H + , and the above-mentioned cation site M 2 + in the above-mentioned structural part Y are replaced with H +. It has an acid dissociation constant a2 derived from an acidic moiety represented by HA 2 , and the acid dissociation constant a2 is larger than the acid dissociation constant a1.
The acid dissociation constant a1 and the acid dissociation constant a2 are obtained by the above-mentioned method. More specifically, the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PI refer to the compound PI (the compound PI is a compound having HA 1 and HA 2) when the acid dissociation constant of the compound PI is obtained. . corresponding to ") is" a 1 - and pKa when a compound "having a HA 2 is the acid dissociation constant a1, the" a 1 - a compound having an HA 2 "is" a 1 - and a 2 - pKa when a compound "having a is an acid dissociation constant a2.
Further, the compound PI corresponds to an acid generated by irradiating compound (I) with active light or radiation.
本発明の効果がより優れる点で、上記化合物PIにおいて、酸解離定数a1と上記酸解離定数a2との差は、0.10~20.00が好ましく、0.50~17.00がより好ましい。
In the compound PI, the difference between the acid dissociation constant a1 and the acid dissociation constant a2 is preferably 0.10 to 20.00, more preferably 0.50 to 17.00, in that the effect of the present invention is more excellent. ..
また、本発明の効果がより優れる点で、上記化合物PIにおいて、酸解離定数a2は、-4.00~15.00が好ましく、-2.00~12.00がより好ましい。
Further, in the above-mentioned compound PI, the acid dissociation constant a2 is preferably -4.00 to 15.00, more preferably -2.00 to 12.00, in that the effect of the present invention is more excellent.
また、本発明の効果がより優れる点で、上記化合物PIにおいて、酸解離定数a1は、-12.00~1.00が好ましく、-7.00~0.50がより好ましい。
Further, in the above-mentioned compound PI, the acid dissociation constant a1 is preferably -12.00 to 1.00, more preferably -7.00 to 0.50, in that the effect of the present invention is more excellent.
・一般式(Ia)
化合物(I)としては特に制限されないが、例えば、下記一般式(Ia)で表される化合物が挙げられる。
M11 + A11 --L1-A12 - M12 + (Ia) ・ General formula (Ia)
The compound (I) is not particularly limited, and examples thereof include a compound represented by the following general formula (Ia).
M 11 + A 11 - - L 1 - A 12 - M 12 + (Ia)
化合物(I)としては特に制限されないが、例えば、下記一般式(Ia)で表される化合物が挙げられる。
M11 + A11 --L1-A12 - M12 + (Ia) ・ General formula (Ia)
The compound (I) is not particularly limited, and examples thereof include a compound represented by the following general formula (Ia).
M 11 + A 11 - - L 1 - A 12 - M 12 + (Ia)
一般式(Ia)中、「M11
+A11
-」及び「A12
-M12
+」は、各々、構造部位X及び構造部位Yに該当する。化合物(Ia)は、活性光線又は放射線の照射によって、HA11-L1-A12Hで表される酸を発生する。つまり、「M11
+A11
-」は、HA11で表される第1の酸性部位を形成し、「A12
-M12
+」は、上記第1の酸性部位とは異なる構造のHA12で表される第2の酸性部位を形成する。
ただし、上記一般式(Ia)において、M11 +及びM12 +で表される有機カチオンをH+に置き換えてなる化合物PIa(HA11-L1-A12H)において、A12Hで表される酸性部位に由来する酸解離定数a2は、HA11で表される酸性部位に由来する酸解離定数a1よりも大きい。なお、酸解離定数a1と酸解離定数a2の好適値については、上述した通りである。 In the general formula (Ia), "M 11 + A 11 -" and "A 12 - M 12 +" each correspond to structural moiety X and the structural moiety Y. Compound (Ia) produces an acid represented by HA 11- L 1- A 12 H by irradiation with active light or radiation. That is, "M 11 + A 11 -" forms a first acidic moiety represented by HA 11, "A 12 - M 12 +" is HA 12 having a structure different from that of the aforementioned first acid sites It forms a second acidic moiety represented by.
However, Table above general formula (Ia), in M 11 + and M 12 + organic cation represented by made by replacing the H + compound PIa (HA 11 -L 1 -A 12 H), at A 12 H The acid dissociation constant a2 derived from the acidic moiety is larger than the acid dissociation constant a1 derived from the acidic moiety represented by HA 11. The preferable values of the acid dissociation constant a1 and the acid dissociation constant a2 are as described above.
ただし、上記一般式(Ia)において、M11 +及びM12 +で表される有機カチオンをH+に置き換えてなる化合物PIa(HA11-L1-A12H)において、A12Hで表される酸性部位に由来する酸解離定数a2は、HA11で表される酸性部位に由来する酸解離定数a1よりも大きい。なお、酸解離定数a1と酸解離定数a2の好適値については、上述した通りである。 In the general formula (Ia), "M 11 + A 11 -" and "A 12 - M 12 +" each correspond to structural moiety X and the structural moiety Y. Compound (Ia) produces an acid represented by HA 11- L 1- A 12 H by irradiation with active light or radiation. That is, "M 11 + A 11 -" forms a first acidic moiety represented by HA 11, "A 12 - M 12 +" is HA 12 having a structure different from that of the aforementioned first acid sites It forms a second acidic moiety represented by.
However, Table above general formula (Ia), in M 11 + and M 12 + organic cation represented by made by replacing the H + compound PIa (HA 11 -L 1 -A 12 H), at A 12 H The acid dissociation constant a2 derived from the acidic moiety is larger than the acid dissociation constant a1 derived from the acidic moiety represented by HA 11. The preferable values of the acid dissociation constant a1 and the acid dissociation constant a2 are as described above.
一般式(Ia)中、M11
+及びM12
+は、それぞれ独立に、有機カチオン(特定有機カチオン、又は、特定有機カチオン以外の有機カチオン)を表す。
M11 +及びM12 +は、少なくとも一方(好ましくは両方)が、特定有機カチオンであることが好ましい。
特定有機カチオンについては上述の通りである。
特定有機カチオン以外の有機カチオンについては上述の通りである。 In the general formula (Ia), M 11 + and M 12 + each independently, an organic cation (specific organic cation, or an organic cation other than the specific organic cation) represents a.
M 11 + and M 12 + is at least one (preferably both) is preferably a specific organic cation.
The specific organic cation is as described above.
The organic cations other than the specific organic cations are as described above.
M11 +及びM12 +は、少なくとも一方(好ましくは両方)が、特定有機カチオンであることが好ましい。
特定有機カチオンについては上述の通りである。
特定有機カチオン以外の有機カチオンについては上述の通りである。 In the general formula (Ia), M 11 + and M 12 + each independently, an organic cation (specific organic cation, or an organic cation other than the specific organic cation) represents a.
M 11 + and M 12 + is at least one (preferably both) is preferably a specific organic cation.
The specific organic cation is as described above.
The organic cations other than the specific organic cations are as described above.
一般式(Ia)中、A11
-及びA12
-は、それぞれ独立に、アニオン性官能基を表す。ただし、A12
-は、A11
-で表されるアニオン性官能基とは異なる構造を表す。
アニオン性官能基については上述の通りである。
A11 -及びA12 -のアニオン性官能基は、それぞれ独立に、一般式(B-1)~(B-13)で表される基が好ましい。
A11 -及びA12 -で表されるアニオン性官能基の組み合わせとしては特に制限されないが、例えば、A11 -が一般式(B-8)又は(B-10)で表される基である場合、A12 -で表されるアニオン性官能基としては、一般式(B-1)~(B-7)、(B-9)、又は(B-11)~(B-13)で表される基が挙げられ、A11 -が一般式(B-7)で表される基である場合、A12 -で表されるアニオン性官能基としては、一般式(B-6)で表される基が挙げられる。 In the general formula (Ia), A 11 - and A 12 - independently represents an anionic functional group. However, A 12 − represents a structure different from the anionic functional group represented by A 11 −.
The anionic functional groups are as described above.
A 11 - and A 12 - anionic functional group are each independently the general formula (B-1) a group represented by ~ (B-13) are preferred.
A 11 - and A 12 - The combination of the anionic functional group represented by is not particularly limited, for example, A 11 - is a group represented by the general formula (B-8) or (B-10) If, A 12 - Table the anionic functional group represented by the general formula (B-1) ~ (B -7), (B-9), or (B-11) ~ (B -13) include groups, a 11 - when is a group represented by the general formula (B-7), a 12 - as the anionic functional group represented by the table in the general formula (B-6) The groups to be used are mentioned.
アニオン性官能基については上述の通りである。
A11 -及びA12 -のアニオン性官能基は、それぞれ独立に、一般式(B-1)~(B-13)で表される基が好ましい。
A11 -及びA12 -で表されるアニオン性官能基の組み合わせとしては特に制限されないが、例えば、A11 -が一般式(B-8)又は(B-10)で表される基である場合、A12 -で表されるアニオン性官能基としては、一般式(B-1)~(B-7)、(B-9)、又は(B-11)~(B-13)で表される基が挙げられ、A11 -が一般式(B-7)で表される基である場合、A12 -で表されるアニオン性官能基としては、一般式(B-6)で表される基が挙げられる。 In the general formula (Ia), A 11 - and A 12 - independently represents an anionic functional group. However, A 12 − represents a structure different from the anionic functional group represented by A 11 −.
The anionic functional groups are as described above.
A 11 - and A 12 - anionic functional group are each independently the general formula (B-1) a group represented by ~ (B-13) are preferred.
A 11 - and A 12 - The combination of the anionic functional group represented by is not particularly limited, for example, A 11 - is a group represented by the general formula (B-8) or (B-10) If, A 12 - Table the anionic functional group represented by the general formula (B-1) ~ (B -7), (B-9), or (B-11) ~ (B -13) include groups, a 11 - when is a group represented by the general formula (B-7), a 12 - as the anionic functional group represented by the table in the general formula (B-6) The groups to be used are mentioned.
一般式(Ia)中、L1は、2価の連結基を表す。
一般式(I)中、L1で表される2価の連結基としては特に制限されず、-CO-、-NR-、-CO-、-O-、アルキレン基(好ましくは炭素数1~6。直鎖状でも分岐鎖状でもよい)、シクロアルキレン基(好ましくは炭素数3~15)、アルケニレン基(好ましくは炭素数2~6)、2価の脂肪族複素環基(少なくとも1つのN原子、O原子、S原子、又はSe原子を環構造内に有する5~10員環が好ましく、5~7員環がより好ましく、5~6員環が更に好ましい。)、及びこれらの複数を組み合わせた2価の連結基等が挙げられる。上記Rは、水素原子又は1価の置換基が挙げられる。1価の置換基としては特に制限されないが、例えば、アルキル基(好ましくは炭素数1~6)が好ましい。
これらの2価の連結基は、更に、-S-、-SO-、及び-SO2-からなる群から選択される基を含んでいてもよい。
また、上記アルキレン基、上記シクロアルキレン基、上記アルケニレン基、及び上記2価の脂肪族複素環基は、置換基で置換されていてもよい。置換基としては、例えば、ハロゲン原子(好ましくはフッ素原子)が挙げられる。 In the general formula (Ia), L 1 represents a divalent linking group.
In the general formula (I), the divalent linking group represented by L 1 is not particularly limited, and is an -CO-, -NR-, -CO-, -O-, alkylene group (preferably having 1 to 1 to carbon atoms). 6. Linear or branched chain), cycloalkylene group (preferably 3 to 15 carbon atoms), alkenylene group (preferably 2 to 6 carbon atoms), divalent aliphatic heterocyclic group (at least one) A 5- to 10-membered ring having an N atom, an O atom, an S atom, or a Se atom in the ring structure is preferable, a 5- to 7-membered ring is more preferable, and a 5- to 6-membered ring is further preferable), and a plurality of these. Examples thereof include a divalent linking group in which the above are combined. The above R may be a hydrogen atom or a monovalent substituent. The monovalent substituent is not particularly limited, but for example, an alkyl group (preferably 1 to 6 carbon atoms) is preferable.
These divalent linking groups may further include a group selected from the group consisting of -S-, -SO-, and -SO 2-.
Further, the alkylene group, the cycloalkylene group, the alkaneylene group, and the divalent aliphatic heterocyclic group may be substituted with a substituent. Examples of the substituent include a halogen atom (preferably a fluorine atom).
一般式(I)中、L1で表される2価の連結基としては特に制限されず、-CO-、-NR-、-CO-、-O-、アルキレン基(好ましくは炭素数1~6。直鎖状でも分岐鎖状でもよい)、シクロアルキレン基(好ましくは炭素数3~15)、アルケニレン基(好ましくは炭素数2~6)、2価の脂肪族複素環基(少なくとも1つのN原子、O原子、S原子、又はSe原子を環構造内に有する5~10員環が好ましく、5~7員環がより好ましく、5~6員環が更に好ましい。)、及びこれらの複数を組み合わせた2価の連結基等が挙げられる。上記Rは、水素原子又は1価の置換基が挙げられる。1価の置換基としては特に制限されないが、例えば、アルキル基(好ましくは炭素数1~6)が好ましい。
これらの2価の連結基は、更に、-S-、-SO-、及び-SO2-からなる群から選択される基を含んでいてもよい。
また、上記アルキレン基、上記シクロアルキレン基、上記アルケニレン基、及び上記2価の脂肪族複素環基は、置換基で置換されていてもよい。置換基としては、例えば、ハロゲン原子(好ましくはフッ素原子)が挙げられる。 In the general formula (Ia), L 1 represents a divalent linking group.
In the general formula (I), the divalent linking group represented by L 1 is not particularly limited, and is an -CO-, -NR-, -CO-, -O-, alkylene group (preferably having 1 to 1 to carbon atoms). 6. Linear or branched chain), cycloalkylene group (preferably 3 to 15 carbon atoms), alkenylene group (preferably 2 to 6 carbon atoms), divalent aliphatic heterocyclic group (at least one) A 5- to 10-membered ring having an N atom, an O atom, an S atom, or a Se atom in the ring structure is preferable, a 5- to 7-membered ring is more preferable, and a 5- to 6-membered ring is further preferable), and a plurality of these. Examples thereof include a divalent linking group in which the above are combined. The above R may be a hydrogen atom or a monovalent substituent. The monovalent substituent is not particularly limited, but for example, an alkyl group (preferably 1 to 6 carbon atoms) is preferable.
These divalent linking groups may further include a group selected from the group consisting of -S-, -SO-, and -SO 2-.
Further, the alkylene group, the cycloalkylene group, the alkaneylene group, and the divalent aliphatic heterocyclic group may be substituted with a substituent. Examples of the substituent include a halogen atom (preferably a fluorine atom).
・一般式(a)
中でも、化合物(I)としては一般式(a)で表される化合物が好ましい。
Ma1 +Aa --La-Ba -Ma2 + (a) ・ General formula (a)
Among them, as the compound (I), the compound represented by the general formula (a) is preferable.
M a1 + A a - -L a -B a - M a2 + (a)
中でも、化合物(I)としては一般式(a)で表される化合物が好ましい。
Ma1 +Aa --La-Ba -Ma2 + (a) ・ General formula (a)
Among them, as the compound (I), the compound represented by the general formula (a) is preferable.
M a1 + A a - -L a -B a - M a2 + (a)
一般式(a)中、Ma1
+及びMa2
+は、それぞれ独立に、有機カチオン(特定有機カチオン又は特定有機カチオン以外の有機カチオン)を表す。
Ma1 +及びMa2 +のうち少なくとも1個(好ましくは全部)は特定有機カチオンを表すことが好ましい。
特定有機カチオンについては上述の通りである。
特定有機カチオン以外の有機カチオンについても上述の通りである。 In the general formula (a), Ma1 + and Ma2 + independently represent organic cations (specific organic cations or organic cations other than specific organic cations).
It is preferable that at least one (preferably all) of Ma 1+ and Ma 2+ represents a specific organic cation.
The specific organic cation is as described above.
The same applies to organic cations other than the specific organic cations.
Ma1 +及びMa2 +のうち少なくとも1個(好ましくは全部)は特定有機カチオンを表すことが好ましい。
特定有機カチオンについては上述の通りである。
特定有機カチオン以外の有機カチオンについても上述の通りである。 In the general formula (a), Ma1 + and Ma2 + independently represent organic cations (specific organic cations or organic cations other than specific organic cations).
It is preferable that at least one (preferably all) of Ma 1+ and Ma 2+ represents a specific organic cation.
The specific organic cation is as described above.
The same applies to organic cations other than the specific organic cations.
一般式(a)中、Laは、2価の有機基を表す。
上記2価の有機基としては、-COO-、-CONH-、-CO-、-O-、アルキレン基(好ましくは炭素数1~6。直鎖状でも分岐鎖状でもよい)、シクロアルキレン基(好ましくは炭素数3~15)、アルケニレン基(好ましくは炭素数2~6)、及びこれらの複数を組み合わせた2価の連結基等が挙げられる。
上記シクロアルキレン基のシクロアルカン環を構成するメチレン基の1個以上が、カルボニル炭素及び/又はヘテロ原子(酸素原子等)で置き換わっていてもよい。
これらの2価の連結基は、更に、-S-、-SO-、及び-SO2-からなる群から選択される基を有するのも好ましい。 In the general formula (a), L a represents a divalent organic group.
Examples of the divalent organic group include -COO-, -CONH-, -CO-, -O-, an alkylene group (preferably 1 to 6 carbon atoms, which may be linear or branched), and a cycloalkylene group. (Preferably, the number of carbon atoms is 3 to 15), an alkenylene group (preferably, the number of carbon atoms is 2 to 6), and a divalent linking group in which a plurality of these are combined can be mentioned.
One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a carbonyl carbon and / or a hetero atom (oxygen atom or the like).
These divalent linking groups also preferably have a group selected from the group consisting of -S-, -SO-, and -SO 2-.
上記2価の有機基としては、-COO-、-CONH-、-CO-、-O-、アルキレン基(好ましくは炭素数1~6。直鎖状でも分岐鎖状でもよい)、シクロアルキレン基(好ましくは炭素数3~15)、アルケニレン基(好ましくは炭素数2~6)、及びこれらの複数を組み合わせた2価の連結基等が挙げられる。
上記シクロアルキレン基のシクロアルカン環を構成するメチレン基の1個以上が、カルボニル炭素及び/又はヘテロ原子(酸素原子等)で置き換わっていてもよい。
これらの2価の連結基は、更に、-S-、-SO-、及び-SO2-からなる群から選択される基を有するのも好ましい。 In the general formula (a), L a represents a divalent organic group.
Examples of the divalent organic group include -COO-, -CONH-, -CO-, -O-, an alkylene group (preferably 1 to 6 carbon atoms, which may be linear or branched), and a cycloalkylene group. (Preferably, the number of carbon atoms is 3 to 15), an alkenylene group (preferably, the number of carbon atoms is 2 to 6), and a divalent linking group in which a plurality of these are combined can be mentioned.
One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a carbonyl carbon and / or a hetero atom (oxygen atom or the like).
These divalent linking groups also preferably have a group selected from the group consisting of -S-, -SO-, and -SO 2-.
中でも、Laは、下記一般式(L)で表される基であることが好ましい。
*A-LA-LB-LC-LD-LE-*B (L) Among them, L a is preferably a group represented by the following general formula (L).
* A-LA-LB-LC-LD-LE- * B (L)
*A-LA-LB-LC-LD-LE-*B (L) Among them, L a is preferably a group represented by the following general formula (L).
* A-LA-LB-LC-LD-LE- * B (L)
一般式(L)中、*Aは、一般式(a)におけるAa
-との結合位置を表す。
一般式(L)中、*Bは、一般式(a)におけるBa -との結合位置を表す。 In the general formula (L), * A represents the connection position with A a − in the general formula (a).
In the general formula (L), * B is, B a in the general formula (a) - shows the point of attachment with.
一般式(L)中、*Bは、一般式(a)におけるBa -との結合位置を表す。 In the general formula (L), * A represents the connection position with A a − in the general formula (a).
In the general formula (L), * B is, B a in the general formula (a) - shows the point of attachment with.
一般式(L)中、LAは、-(C(RLA1)(RLA2))XA-を表す。
上記XAは、1以上の整数を表し、1~10が好ましく、1~3がより好ましい。
RLA1及びRLA2は、それぞれ独立に、水素原子又は置換基を表す。
RLA1及びRLA2が置換基を表す場合の置換基としては、フッ素原子又はフルオロアルキル基が好ましく、フッ素原子又はパーフルオロアルキル基がより好ましく、フッ素原子又はパーフルオロメチル基が更に好ましい。
XAが2以上の場合、XA個存在するRLA1は、それぞれ同一でも異なっていてもよい。
XAが2以上の場合、XA個存在するRLA2は、それぞれ同一でも異なっていてもよい。
-(C(RLA1)(RLA2))-は、-CH2-、-CHF-、-CH(CF3)-又は-CF2-であることが好ましい。
中でも、一般式(a)中のAa -と直接結合する-(C(RLA1)(RLA2))-は、-CH2-、-CHF-、-CH(CF3)-又は-CF2-であることが好ましい。
一般式(a)中のAa -と直接結合する-(C(RLA1)(RLA2))-以外の-(C(RLA1)(RLA2))-は、それぞれ独立に、-CH2-、-CHF-又は-CF2-であることが好ましい。 In the general formula (L), LA represents − (C (R LA1 ) (R LA2 )) XA −.
The XA represents an integer of 1 or more, preferably 1 to 10, and more preferably 1 to 3.
R LA1 and R LA2 independently represent a hydrogen atom or a substituent.
When R LA1 and R LA2 represent a substituent, a fluorine atom or a fluoroalkyl group is preferable, a fluorine atom or a perfluoroalkyl group is more preferable, and a fluorine atom or a perfluoromethyl group is further preferable.
When the number of XA is 2 or more, the R LA1s having XA may be the same or different.
When the number of XA is 2 or more, the R LA2 having XA may be the same or different.
-(C (R LA1 ) (R LA2 ))-is preferably -CH 2- , -CHF-, -CH (CF 3 )-or -CF 2- .
Above all, formula (a) in the A a - and a direct bond to - (C (R LA1) ( R LA2)) - is, -CH 2 -, - CHF - , - CH (CF 3) - or -CF It is preferably 2-.
Formula (a) in the A a - and a direct bond to - (C (R LA1) ( R LA2)) - other than the - (C (R LA1) ( R LA2)) - are each independently, -CH 2 -, - CHF- or -CF 2 - is preferably.
上記XAは、1以上の整数を表し、1~10が好ましく、1~3がより好ましい。
RLA1及びRLA2は、それぞれ独立に、水素原子又は置換基を表す。
RLA1及びRLA2が置換基を表す場合の置換基としては、フッ素原子又はフルオロアルキル基が好ましく、フッ素原子又はパーフルオロアルキル基がより好ましく、フッ素原子又はパーフルオロメチル基が更に好ましい。
XAが2以上の場合、XA個存在するRLA1は、それぞれ同一でも異なっていてもよい。
XAが2以上の場合、XA個存在するRLA2は、それぞれ同一でも異なっていてもよい。
-(C(RLA1)(RLA2))-は、-CH2-、-CHF-、-CH(CF3)-又は-CF2-であることが好ましい。
中でも、一般式(a)中のAa -と直接結合する-(C(RLA1)(RLA2))-は、-CH2-、-CHF-、-CH(CF3)-又は-CF2-であることが好ましい。
一般式(a)中のAa -と直接結合する-(C(RLA1)(RLA2))-以外の-(C(RLA1)(RLA2))-は、それぞれ独立に、-CH2-、-CHF-又は-CF2-であることが好ましい。 In the general formula (L), LA represents − (C (R LA1 ) (R LA2 )) XA −.
The XA represents an integer of 1 or more, preferably 1 to 10, and more preferably 1 to 3.
R LA1 and R LA2 independently represent a hydrogen atom or a substituent.
When R LA1 and R LA2 represent a substituent, a fluorine atom or a fluoroalkyl group is preferable, a fluorine atom or a perfluoroalkyl group is more preferable, and a fluorine atom or a perfluoromethyl group is further preferable.
When the number of XA is 2 or more, the R LA1s having XA may be the same or different.
When the number of XA is 2 or more, the R LA2 having XA may be the same or different.
-(C (R LA1 ) (R LA2 ))-is preferably -CH 2- , -CHF-, -CH (CF 3 )-or -CF 2- .
Above all, formula (a) in the A a - and a direct bond to - (C (R LA1) ( R LA2)) - is, -CH 2 -, - CHF - , - CH (CF 3) - or -CF It is preferably 2-.
Formula (a) in the A a - and a direct bond to - (C (R LA1) ( R LA2)) - other than the - (C (R LA1) ( R LA2)) - are each independently, -CH 2 -, - CHF- or -CF 2 - is preferably.
一般式(L)中、LBは、単結合、エステル基(-COO-)、又はスルホニル基(-SO2-)を表す。
In the general formula (L), LB represents a single bond, an ester group (-COO-), or a sulfonyl group (-SO 2- ).
一般式(L)中、LCは、単結合、アルキレン基、シクロアルキレン基、又はこれらを組み合わせてなる基(「-アルキレン基-シクロアルキレン基-」等)を表す。
上記アルキレン基は、直鎖状でも分岐鎖状でもよい。
上記アルキレン基の炭素数は、1~5が好ましく、1~2がより好ましく、1が更に好ましい。
上記シクロアルキレン基の炭素数は、3~15が好ましく、5~10がより好ましい。
上記シクロアルキレン基は単環でも多環でもよい。
上記シクロアルキレン基としては、例えば、ノルボルナンジイル基、及びアダマンタンジイル基が挙げられる。
上記シクロアルキレン基が有してもよい置換基としては、アルキル基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~5)が好ましい。
上記シクロアルキレン基のシクロアルカン環を構成するメチレン基の1個以上が、カルボニル炭素及び/又はヘテロ原子(酸素原子等)で置き換わっていてもよい。
LCが、「-アルキレン基-シクロアルキレン基-」の場合、アルキレン基部分は、LB側に存在することが好ましい。
LBが単結合の場合、LCは、単結合又はシクロアルキレン基が好ましい。 In the general formula (L), LC represents a single bond, an alkylene group, a cycloalkylene group, or a group composed of a combination thereof (such as "-alkylene group-cycloalkylene group-").
The alkylene group may be linear or branched.
The alkylene group preferably has 1 to 5 carbon atoms, more preferably 1 to 2 carbon atoms, and even more preferably 1.
The cycloalkylene group preferably has 3 to 15 carbon atoms, and more preferably 5 to 10 carbon atoms.
The cycloalkylene group may be monocyclic or polycyclic.
Examples of the cycloalkylene group include a norbornanediyl group and an adamantandiyl group.
As the substituent that the cycloalkylene group may have, an alkyl group (which may be linear or branched, preferably 1 to 5 carbon atoms) is preferable.
One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a carbonyl carbon and / or a hetero atom (oxygen atom or the like).
When the LC is "-alkylene group-cycloalkylene group-", the alkylene group portion is preferably present on the LB side.
When the LB is a single bond, the LC is preferably a single bond or a cycloalkylene group.
上記アルキレン基は、直鎖状でも分岐鎖状でもよい。
上記アルキレン基の炭素数は、1~5が好ましく、1~2がより好ましく、1が更に好ましい。
上記シクロアルキレン基の炭素数は、3~15が好ましく、5~10がより好ましい。
上記シクロアルキレン基は単環でも多環でもよい。
上記シクロアルキレン基としては、例えば、ノルボルナンジイル基、及びアダマンタンジイル基が挙げられる。
上記シクロアルキレン基が有してもよい置換基としては、アルキル基(直鎖状でも分岐鎖状でもよい。好ましくは炭素数1~5)が好ましい。
上記シクロアルキレン基のシクロアルカン環を構成するメチレン基の1個以上が、カルボニル炭素及び/又はヘテロ原子(酸素原子等)で置き換わっていてもよい。
LCが、「-アルキレン基-シクロアルキレン基-」の場合、アルキレン基部分は、LB側に存在することが好ましい。
LBが単結合の場合、LCは、単結合又はシクロアルキレン基が好ましい。 In the general formula (L), LC represents a single bond, an alkylene group, a cycloalkylene group, or a group composed of a combination thereof (such as "-alkylene group-cycloalkylene group-").
The alkylene group may be linear or branched.
The alkylene group preferably has 1 to 5 carbon atoms, more preferably 1 to 2 carbon atoms, and even more preferably 1.
The cycloalkylene group preferably has 3 to 15 carbon atoms, and more preferably 5 to 10 carbon atoms.
The cycloalkylene group may be monocyclic or polycyclic.
Examples of the cycloalkylene group include a norbornanediyl group and an adamantandiyl group.
As the substituent that the cycloalkylene group may have, an alkyl group (which may be linear or branched, preferably 1 to 5 carbon atoms) is preferable.
One or more of the methylene groups constituting the cycloalkane ring of the cycloalkylene group may be replaced with a carbonyl carbon and / or a hetero atom (oxygen atom or the like).
When the LC is "-alkylene group-cycloalkylene group-", the alkylene group portion is preferably present on the LB side.
When the LB is a single bond, the LC is preferably a single bond or a cycloalkylene group.
一般式(L)中、LDは、単結合、エーテル基(-O-)、カルボニル基(-CO-)、又はエステル基(-COO-)を表す。
In the general formula (L), LD represents a single bond, an ether group (-O-), a carbonyl group (-CO-), or an ester group (-COO-).
一般式(L)中、LEは、単結合又は-(C(RLE1)(RLE2))XE-を表す。
上記-(C(RLE1)(RLE2))XE-におけるXEは、1以上の整数を表し、1~10が好ましく、1~3がより好ましい。
RLE1及びRLE2は、それぞれ独立に、水素原子又は置換基を表す。
XEが2以上の場合、XE個存在するRLE1は、それぞれ同一でも異なっていてもよい。
XEが2以上の場合、XE個存在するRLE2は、それぞれ同一でも異なっていてもよい。
中でも、-(C(RLE1)(RLE2))-は、-CH2-又は-CF2-であることが好ましい。
一般式(L)中、LB、LC、及びLDが単結合の場合、LEも単結合であることが好ましい。 In the general formula (L), LE is a single bond or - (C (R LE1) ( R LE2)) XE - represents a.
XE in- (C (R LE1) (R LE2 )) XE- represents an integer of 1 or more, preferably 1 to 10, and more preferably 1 to 3.
R LE1 and R LE2 independently represent a hydrogen atom or a substituent.
When the number of XEs is 2 or more, the R LE1s having XEs may be the same or different.
When the number of XEs is 2 or more, the R LE2s having XEs may be the same or different.
Above all,-(C (R LE1 ) (R LE2 ))-is preferably -CH 2- or -CF 2-.
In the general formula (L), when LB, LC, and LD are single bonds, it is preferable that LE is also a single bond.
上記-(C(RLE1)(RLE2))XE-におけるXEは、1以上の整数を表し、1~10が好ましく、1~3がより好ましい。
RLE1及びRLE2は、それぞれ独立に、水素原子又は置換基を表す。
XEが2以上の場合、XE個存在するRLE1は、それぞれ同一でも異なっていてもよい。
XEが2以上の場合、XE個存在するRLE2は、それぞれ同一でも異なっていてもよい。
中でも、-(C(RLE1)(RLE2))-は、-CH2-又は-CF2-であることが好ましい。
一般式(L)中、LB、LC、及びLDが単結合の場合、LEも単結合であることが好ましい。 In the general formula (L), LE is a single bond or - (C (R LE1) ( R LE2)) XE - represents a.
XE in- (C (R LE1) (R LE2 )) XE- represents an integer of 1 or more, preferably 1 to 10, and more preferably 1 to 3.
R LE1 and R LE2 independently represent a hydrogen atom or a substituent.
When the number of XEs is 2 or more, the R LE1s having XEs may be the same or different.
When the number of XEs is 2 or more, the R LE2s having XEs may be the same or different.
Above all,-(C (R LE1 ) (R LE2 ))-is preferably -CH 2- or -CF 2-.
In the general formula (L), when LB, LC, and LD are single bonds, it is preferable that LE is also a single bond.
一般式(a)中、Aa
-及びBa
-は、それぞれ独立に、アニオン性官能基を表す。
アニオン性官能基については上述の通りである。
中でも、Aa -は、一般式(AX-1)~(AX-2)のいずれかで表される基であることが好ましい。
Ba -は、一般式(BX-1)~(BX-4)のいずれかで表される基を表すことが好ましい。
Aa -及びBa -は、それぞれ異なる構造であることが好ましい。
中でも、Aa -が一般式(AX-1)で表される基であり、かつBa -が一般式(BX-1)~(BX-4)のいずれかで表される基であるか、又は、Aa -が一般式(AX-2)で表される基であり、かつBa -が一般式(BX-1)、(BX-3)、(BX-4)のいずれかで表される基であることが好ましい。 In the general formula (a), A a - and B a - each independently represent an anionic functional group.
The anionic functional groups are as described above.
Among them, A a − is preferably a group represented by any of the general formulas (AX-1) to (AX-2).
B a - preferably represents a general formula (BX-1) ~ a group represented by any one of (BX-4).
A a - and B a - is preferably respectively different structures.
Among them, A a - is a group represented by the general formula (AX-1), and B a - Do a group represented by any one of formulas (BX-1) ~ (BX -4) or, a a - is a group represented by the general formula (AX-2), and B a - general formula (BX-1), (BX -3), with either (BX-4) It is preferably the group represented.
アニオン性官能基については上述の通りである。
中でも、Aa -は、一般式(AX-1)~(AX-2)のいずれかで表される基であることが好ましい。
Ba -は、一般式(BX-1)~(BX-4)のいずれかで表される基を表すことが好ましい。
Aa -及びBa -は、それぞれ異なる構造であることが好ましい。
中でも、Aa -が一般式(AX-1)で表される基であり、かつBa -が一般式(BX-1)~(BX-4)のいずれかで表される基であるか、又は、Aa -が一般式(AX-2)で表される基であり、かつBa -が一般式(BX-1)、(BX-3)、(BX-4)のいずれかで表される基であることが好ましい。 In the general formula (a), A a - and B a - each independently represent an anionic functional group.
The anionic functional groups are as described above.
Among them, A a − is preferably a group represented by any of the general formulas (AX-1) to (AX-2).
B a - preferably represents a general formula (BX-1) ~ a group represented by any one of (BX-4).
A a - and B a - is preferably respectively different structures.
Among them, A a - is a group represented by the general formula (AX-1), and B a - Do a group represented by any one of formulas (BX-1) ~ (BX -4) or, a a - is a group represented by the general formula (AX-2), and B a - general formula (BX-1), (BX -3), with either (BX-4) It is preferably the group represented.
ただし、一般式(a)で表される化合物のMa1
+及びMa2
+がそれぞれ水素原子で置換されたHAa-La-BaHで表される化合物において、HAaで表される基のpKaはBaHで表される基のpKaよりも小さい。
より具体的には、HAa-La-BaHで表される化合物について酸解離定数を求めた場合において、「HAa-La-BaH」が「Aa --La-BaH」となる際のpKaを「HAaで表される基のpKa」とし、更に、「Aa --La-BaH」が「Aa --La-Ba -」となる際のpKaを「BaHで表される基のpKa」とする。
「HAaで表される基のpKa」及び「BaHで表される基のpKa」は、それぞれ、「ソフトウェアパッケージ1」又は「Gaussian16」を用いて求める。
例えば、HAaで表される基のpKaは、上述の酸解離定数a1に相当し、好ましい範囲も同様である。
BaHで表される基のpKaは、上述の酸解離定数a2に相当し、好ましい範囲も同様である。
HBaで表される基のpKaとHAaで表される基のpKaとの差(「HBaで表される基のpKa」-「HAaで表される基のpKa」)は、上述の酸解離定数a1と上記酸解離定数a2との差に相当し、好ましい範囲も同様である。 However, in the general formula (a) HA a -L a -B represented by a H compound M a1 + and M a2 + is substituted with a hydrogen atom each of the compounds represented by the represented by HA a pKa groups is less than the pKa of the groups represented by B a H.
More specifically, HA a -L a -B a in the case of seeking the acid dissociation constant for the compound represented by H, "HA a -L a -B a H" is "A a - -L a - the pKa at which the B a H "as" pKa of the group represented by HA a "further" a a - -L a -B a H "is" a a - -L a -B a - " Let pKa at the time of becoming "pKa of the group represented by B a H".
“PKa of the group represented by HA a ” and “pKa of the group represented by B a H” are determined by using “Software Package 1” or “Gaussian 16”, respectively.
For example, the pKa of the group represented by HA a corresponds to the acid dissociation constant a1 described above, and the preferred range is also the same.
The pKa of the group represented by B a H corresponds to the acid dissociation constant a2 described above, and the preferable range is also the same.
The difference between the pKa of the groups represented by pKa and HA a group represented by HB a ( "pKa of the group represented by HB a" - "pKa of the group represented by HA a") is above Corresponds to the difference between the acid dissociation constant a1 and the acid dissociation constant a2, and the preferred range is also the same.
より具体的には、HAa-La-BaHで表される化合物について酸解離定数を求めた場合において、「HAa-La-BaH」が「Aa --La-BaH」となる際のpKaを「HAaで表される基のpKa」とし、更に、「Aa --La-BaH」が「Aa --La-Ba -」となる際のpKaを「BaHで表される基のpKa」とする。
「HAaで表される基のpKa」及び「BaHで表される基のpKa」は、それぞれ、「ソフトウェアパッケージ1」又は「Gaussian16」を用いて求める。
例えば、HAaで表される基のpKaは、上述の酸解離定数a1に相当し、好ましい範囲も同様である。
BaHで表される基のpKaは、上述の酸解離定数a2に相当し、好ましい範囲も同様である。
HBaで表される基のpKaとHAaで表される基のpKaとの差(「HBaで表される基のpKa」-「HAaで表される基のpKa」)は、上述の酸解離定数a1と上記酸解離定数a2との差に相当し、好ましい範囲も同様である。 However, in the general formula (a) HA a -L a -B represented by a H compound M a1 + and M a2 + is substituted with a hydrogen atom each of the compounds represented by the represented by HA a pKa groups is less than the pKa of the groups represented by B a H.
More specifically, HA a -L a -B a in the case of seeking the acid dissociation constant for the compound represented by H, "HA a -L a -B a H" is "A a - -L a - the pKa at which the B a H "as" pKa of the group represented by HA a "further" a a - -L a -B a H "is" a a - -L a -B a - " Let pKa at the time of becoming "pKa of the group represented by B a H".
“PKa of the group represented by HA a ” and “pKa of the group represented by B a H” are determined by using “Software Package 1” or “Gaussian 16”, respectively.
For example, the pKa of the group represented by HA a corresponds to the acid dissociation constant a1 described above, and the preferred range is also the same.
The pKa of the group represented by B a H corresponds to the acid dissociation constant a2 described above, and the preferable range is also the same.
The difference between the pKa of the groups represented by pKa and HA a group represented by HB a ( "pKa of the group represented by HB a" - "pKa of the group represented by HA a") is above Corresponds to the difference between the acid dissociation constant a1 and the acid dissociation constant a2, and the preferred range is also the same.
・化合物(II)
次に、化合物(II)について説明する。
化合物(II)は下記化合物である。
化合物(II):上記構造部位Xを2つ以上と上記構造部位Yとを有する化合物であって、活性光線又は放射線の照射によって、上記構造部位Xに由来する上記第1の酸性部位を2つ以上と上記構造部位Yに由来する上記第2の酸性部位とを含む酸を発生する化合物。ただし、化合物(II)は、下記条件IIを満たす。
条件II:上記化合物(II)において上記構造部位X中の上記カチオン部位M1 +及び上記構造部位Y中のカチオン部位M2 +をH+に置き換えてなる化合物PIIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数a1と、上記構造部位Y中の上記カチオン部位M2 +をH+に置き換えてなるHA2で表される酸性部位に由来する酸解離定数a2を有し、かつ、上記酸解離定数a1よりも上記酸解離定数a2の方が大きい。
酸解離定数a1及び酸解離定数a2は、上述した方法により求められる。
ここで、化合物PIIの酸解離定数a1及び酸解離定数a2について、より具体的に説明する。化合物(II)が、例えば、上記構造部位Xに由来する上記第1の酸性部位を2つと、上記構造部位Yに由来する上記第2の酸性部位を1つ有する酸を発生する化合物である場合、化合物PIIは「2つのHA1とHA2を有する化合物」に該当する。この化合物PIIの酸解離定数を求めた場合、化合物PIIが「1つのA1 -と1つのHA1とHA2とを有する化合物」となる際のpKaが酸解離定数a1であり、「2つのA1 -とHA2とを有する化合物」が「2つのA1 -とA2 -を有する化合物」となる際のpKaが酸解離定数a2である。つまり、化合物PIIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数を複数有する場合、その最も小さい値を酸解離定数a1とみなす。 -Compound (II)
Next, compound (II) will be described.
Compound (II) is the following compound.
Compound (II): A compound having two or more structural sites X and the structural site Y, and having two first acidic sites derived from the structural site X by irradiation with active light or radiation. A compound that generates an acid containing the above and the second acidic moiety derived from the structural moiety Y. However, compound (II) satisfies the following condition II.
Condition II: In the compound (II), the compound PII obtained by replacing the cation site M 1 + in the structural site X and the cation site M 2 + in the structural site Y with H + is contained in the structural site X. The acid dissociation constant a1 derived from the acidic site represented by HA 1 in which the cation site M 1 + is replaced with H + , and the HA obtained by replacing the cation site M 2 + in the structural site Y with H +. It has an acid dissociation constant a2 derived from the acidic moiety represented by 2, and the acid dissociation constant a2 is larger than the acid dissociation constant a1.
The acid dissociation constant a1 and the acid dissociation constant a2 are obtained by the above-mentioned method.
Here, the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PII will be described more specifically. When compound (II) is, for example, a compound that generates an acid having two first acidic sites derived from the structural site X and one second acidic site derived from the structural site Y. , Compound PII corresponds to "a compound having two HA 1 and HA 2". If asked for the acid dissociation constant of the compound PII, compound PII is - a pKa of acid dissociation constant a1 when the "one of A 1 and one HA 1 and HA 2 with a compound of", "two a 1 - and HA 2 compound having the "is" two a 1 - and a 2 - pKa when a compound "having a is an acid dissociation constant a2. That is, when the compound PII has a plurality of acid dissociation constants derived from the acidic site represented by HA 1 formed by replacing the cation site M 1 + in the structural site X with H +, the smallest value is acid. It is regarded as the dissociation constant a1.
次に、化合物(II)について説明する。
化合物(II)は下記化合物である。
化合物(II):上記構造部位Xを2つ以上と上記構造部位Yとを有する化合物であって、活性光線又は放射線の照射によって、上記構造部位Xに由来する上記第1の酸性部位を2つ以上と上記構造部位Yに由来する上記第2の酸性部位とを含む酸を発生する化合物。ただし、化合物(II)は、下記条件IIを満たす。
条件II:上記化合物(II)において上記構造部位X中の上記カチオン部位M1 +及び上記構造部位Y中のカチオン部位M2 +をH+に置き換えてなる化合物PIIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数a1と、上記構造部位Y中の上記カチオン部位M2 +をH+に置き換えてなるHA2で表される酸性部位に由来する酸解離定数a2を有し、かつ、上記酸解離定数a1よりも上記酸解離定数a2の方が大きい。
酸解離定数a1及び酸解離定数a2は、上述した方法により求められる。
ここで、化合物PIIの酸解離定数a1及び酸解離定数a2について、より具体的に説明する。化合物(II)が、例えば、上記構造部位Xに由来する上記第1の酸性部位を2つと、上記構造部位Yに由来する上記第2の酸性部位を1つ有する酸を発生する化合物である場合、化合物PIIは「2つのHA1とHA2を有する化合物」に該当する。この化合物PIIの酸解離定数を求めた場合、化合物PIIが「1つのA1 -と1つのHA1とHA2とを有する化合物」となる際のpKaが酸解離定数a1であり、「2つのA1 -とHA2とを有する化合物」が「2つのA1 -とA2 -を有する化合物」となる際のpKaが酸解離定数a2である。つまり、化合物PIIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数を複数有する場合、その最も小さい値を酸解離定数a1とみなす。 -Compound (II)
Next, compound (II) will be described.
Compound (II) is the following compound.
Compound (II): A compound having two or more structural sites X and the structural site Y, and having two first acidic sites derived from the structural site X by irradiation with active light or radiation. A compound that generates an acid containing the above and the second acidic moiety derived from the structural moiety Y. However, compound (II) satisfies the following condition II.
Condition II: In the compound (II), the compound PII obtained by replacing the cation site M 1 + in the structural site X and the cation site M 2 + in the structural site Y with H + is contained in the structural site X. The acid dissociation constant a1 derived from the acidic site represented by HA 1 in which the cation site M 1 + is replaced with H + , and the HA obtained by replacing the cation site M 2 + in the structural site Y with H +. It has an acid dissociation constant a2 derived from the acidic moiety represented by 2, and the acid dissociation constant a2 is larger than the acid dissociation constant a1.
The acid dissociation constant a1 and the acid dissociation constant a2 are obtained by the above-mentioned method.
Here, the acid dissociation constant a1 and the acid dissociation constant a2 of the compound PII will be described more specifically. When compound (II) is, for example, a compound that generates an acid having two first acidic sites derived from the structural site X and one second acidic site derived from the structural site Y. , Compound PII corresponds to "a compound having two HA 1 and HA 2". If asked for the acid dissociation constant of the compound PII, compound PII is - a pKa of acid dissociation constant a1 when the "one of A 1 and one HA 1 and HA 2 with a compound of", "two a 1 - and HA 2 compound having the "is" two a 1 - and a 2 - pKa when a compound "having a is an acid dissociation constant a2. That is, when the compound PII has a plurality of acid dissociation constants derived from the acidic site represented by HA 1 formed by replacing the cation site M 1 + in the structural site X with H +, the smallest value is acid. It is regarded as the dissociation constant a1.
また、上記化合物PIIとは、化合物(II)に活性光線又は放射線を照射することにより発生する酸に該当する。
なお、化合物(II)は、上記構造部位Yを複数有していてもよい。 Further, the compound PII corresponds to an acid generated by irradiating compound (II) with active light rays or radiation.
The compound (II) may have a plurality of the structural sites Y.
なお、化合物(II)は、上記構造部位Yを複数有していてもよい。 Further, the compound PII corresponds to an acid generated by irradiating compound (II) with active light rays or radiation.
The compound (II) may have a plurality of the structural sites Y.
本発明の効果がより優れる点で、上記化合物PIIにおいて、酸解離定数a1と上記酸解離定数a2との差は、2.00以上が好ましく、3.00以上がより好ましい。なお、酸解離定数a1と上記酸解離定数a2との差の上限値は特に制限されないが、例えば、15.00以下である。
In the compound PII, the difference between the acid dissociation constant a1 and the acid dissociation constant a2 is preferably 2.00 or more, and more preferably 3.00 or more, in that the effect of the present invention is more excellent. The upper limit of the difference between the acid dissociation constant a1 and the acid dissociation constant a2 is not particularly limited, but is, for example, 15.00 or less.
また、本発明の効果がより優れる点で、上記化合物PIIにおいて、酸解離定数a2は、2.00以下が好ましく、1.00以下がより好ましい。なお、酸解離定数a2の下限値としては、-2.00以上が好ましい。
Further, in the above-mentioned compound PII, the acid dissociation constant a2 is preferably 2.00 or less, more preferably 1.00 or less, in that the effect of the present invention is more excellent. The lower limit of the acid dissociation constant a2 is preferably −2.00 or higher.
また、本発明の効果がより優れる点で、上記化合物PIIにおいて、酸解離定数a1は、2.00以下が好ましく、0.50以下がより好ましく、-0.10以下が更に好ましい。なお、酸解離定数a1の下限値としては、-15.00以上が好ましい。
Further, in the above-mentioned compound PII, the acid dissociation constant a1 is preferably 2.00 or less, more preferably 0.50 or less, still more preferably −0.10 or less, in that the effect of the present invention is more excellent. The lower limit of the acid dissociation constant a1 is preferably -15.00 or higher.
化合物(II)としては特に制限されず、例えば、下記一般式(IIa)で表される化合物が挙げられる。
The compound (II) is not particularly limited, and examples thereof include a compound represented by the following general formula (IIa).
一般式(IIa)中、「M21
+A21
-」及び「A22
-M22
+」は、各々、構造部位X及び構造部位Yに該当する。化合物(IIa)は、活性光線又は放射線の照射によって、下記一般式(IIa-1)で表される酸を発生する。つまり、「M21
+A21
-」は、HA21で表される第1の酸性部位を形成し、「A22
-M22
+」は、上記第1の酸性部位とは異なる構造のHA22で表される第2の酸性部位を形成する。
In the general formula (IIa), "M 21 + A 21 -" and "A 22 - + M 22" each correspond to structural moiety X and the structural moiety Y. Compound (IIa) generates an acid represented by the following general formula (IIa-1) by irradiation with active light or radiation. That is, "M 21 + A 21 -" forms a first acidic moiety represented by HA 21, "A 22 - M 22 +" is a structure different from that of the first acid sites HA 22 It forms a second acidic moiety represented by.
一般式(IIa)中、M21
+及びM22
+は、それぞれ独立に、有機カチオンを表す。
A21 -及びA22 -は、それぞれ独立に、アニオン性官能基を表す。ただし、A22 -は、A21 -で表されるアニオン性官能基とは異なる構造を表す。
L2は、(n1+n2)価の有機基を表す。
n1は、2以上の整数を表す。
n2は、1以上の整数を表す。
ただし、上記下記一般式(IIa)において、M21 +及びM22 +で表される有機カチオンをH+に置き換えてなる化合物PIIa(上記一般式(IIa-1)で表される化合物に該当する。)において、A22Hで表される酸性部位に由来する酸解離定数a2は、HA21で表される酸性部位に由来する酸解離定数a1よりも大きい。なお、酸解離定数a1と酸解離定数a2の好適値については、上述した通りである。 In the general formula (IIa), + M 21 + and M 22 each independently represents an organic cation.
A 21 - and A 22 - independently represents an anionic functional group. However, A 22 − represents a structure different from the anionic functional group represented by A 21 −.
L 2 represents a (n1 + n2) valent organic group.
n1 represents an integer of 2 or more.
n2 represents an integer of 1 or more.
However, the following general formula (IIa), corresponds to the compound represented by Compound PIIa comprising replacing organic cation represented by M 21 + and M 22 + to H + (the general formula (IIa-1) ), The acid dissociation constant a2 derived from the acidic moiety represented by A 22 H is larger than the acid dissociation constant a1 derived from the acidic moiety represented by HA 21. The preferable values of the acid dissociation constant a1 and the acid dissociation constant a2 are as described above.
A21 -及びA22 -は、それぞれ独立に、アニオン性官能基を表す。ただし、A22 -は、A21 -で表されるアニオン性官能基とは異なる構造を表す。
L2は、(n1+n2)価の有機基を表す。
n1は、2以上の整数を表す。
n2は、1以上の整数を表す。
ただし、上記下記一般式(IIa)において、M21 +及びM22 +で表される有機カチオンをH+に置き換えてなる化合物PIIa(上記一般式(IIa-1)で表される化合物に該当する。)において、A22Hで表される酸性部位に由来する酸解離定数a2は、HA21で表される酸性部位に由来する酸解離定数a1よりも大きい。なお、酸解離定数a1と酸解離定数a2の好適値については、上述した通りである。 In the general formula (IIa), + M 21 + and M 22 each independently represents an organic cation.
A 21 - and A 22 - independently represents an anionic functional group. However, A 22 − represents a structure different from the anionic functional group represented by A 21 −.
L 2 represents a (n1 + n2) valent organic group.
n1 represents an integer of 2 or more.
n2 represents an integer of 1 or more.
However, the following general formula (IIa), corresponds to the compound represented by Compound PIIa comprising replacing organic cation represented by M 21 + and M 22 + to H + (the general formula (IIa-1) ), The acid dissociation constant a2 derived from the acidic moiety represented by A 22 H is larger than the acid dissociation constant a1 derived from the acidic moiety represented by HA 21. The preferable values of the acid dissociation constant a1 and the acid dissociation constant a2 are as described above.
上記一般式(IIa)中、M21
+、M22
+、A21
-、及び、A22
-は、各々上述した一般式(Ia)中のM11
+、M12
+、A11
-、及、びA12
-と同義であり、好適態様も同じである。
上記一般式(IIa)中、n1個のM21 +同士、n1個のA21 +同士は、各々互いに同一の基を表す。 In the general formula (IIa), M 21 +, M 22 +, A 21 -, and, A 22 - is in each above-mentioned general formula (Ia) M 11 +, M 12 +, A 11 -,及fine a 12 - in the above formula, preferred embodiments are also the same.
In the general formula (IIa), n1 pieces of M 21 + each other, n1 pieces of A 21 + each other, represent each mutually identical groups.
上記一般式(IIa)中、n1個のM21 +同士、n1個のA21 +同士は、各々互いに同一の基を表す。 In the general formula (IIa), M 21 +, M 22 +, A 21 -, and, A 22 - is in each above-mentioned general formula (Ia) M 11 +, M 12 +, A 11 -,及fine a 12 - in the above formula, preferred embodiments are also the same.
In the general formula (IIa), n1 pieces of M 21 + each other, n1 pieces of A 21 + each other, represent each mutually identical groups.
上記一般式(IIa)中、L2で表される(n1+n2)価の有機基としては特に制限されないが、例えば、下記(A1)及び下記(A2)で表される基等が挙げられる。なお、下記(A1)及び(A2)中、*のうち少なくとも2個はA21
-との結合位置を表し、*のうち少なくとも1個はA22
-との結合位置を表す。
In the general formula (IIa), is not particularly limited as expressed by (n1 + n2) valent organic group in L 2, for example, include groups represented by the following (A1) and the following (A2). Incidentally, in the following (A1) and (A2), at least two of * A 21 - represents a bonding position to at least one of * the A 22 - represents a bonding site to the.
上記(A1)及び(A2)中、T1は、3価の炭化水素環基、又は3価の複素環基を表し、T2は、炭素原子、4価の炭化水素環基、又は4価の複素環基を表す。
In the above (A1) and (A2), T 1 represents a trivalent hydrocarbon ring group or a trivalent heterocyclic group, and T 2 is a carbon atom, a tetravalent hydrocarbon ring group, or a tetravalent. Represents the heterocyclic group of.
上記炭化水素環基は、芳香族炭化水素環基であっても、脂肪族炭化水素環基であってもよい。上記炭化水素環基に含まれる炭素数は、6~18が好ましく、6~14がより好ましい。
上記複素環基は、芳香族複素環基であっても、脂肪族複素環基であってもよい。上記複素環は、少なくとも1つのN原子、O原子、S原子、又はSe原子を環構造内に有する5~10員環であることが好ましく、5~7員環がより好ましく、5~6員環が更に好ましい。 The hydrocarbon ring group may be an aromatic hydrocarbon ring group or an aliphatic hydrocarbon ring group. The number of carbon atoms contained in the hydrocarbon ring group is preferably 6 to 18, and more preferably 6 to 14.
The heterocyclic group may be an aromatic heterocyclic group or an aliphatic heterocyclic group. The heterocycle is preferably a 5- to 10-membered ring having at least one N atom, an O atom, an S atom, or a Se atom in the ring structure, more preferably a 5- to 7-membered ring, and a 5- to 6-membered ring. Rings are more preferred.
上記複素環基は、芳香族複素環基であっても、脂肪族複素環基であってもよい。上記複素環は、少なくとも1つのN原子、O原子、S原子、又はSe原子を環構造内に有する5~10員環であることが好ましく、5~7員環がより好ましく、5~6員環が更に好ましい。 The hydrocarbon ring group may be an aromatic hydrocarbon ring group or an aliphatic hydrocarbon ring group. The number of carbon atoms contained in the hydrocarbon ring group is preferably 6 to 18, and more preferably 6 to 14.
The heterocyclic group may be an aromatic heterocyclic group or an aliphatic heterocyclic group. The heterocycle is preferably a 5- to 10-membered ring having at least one N atom, an O atom, an S atom, or a Se atom in the ring structure, more preferably a 5- to 7-membered ring, and a 5- to 6-membered ring. Rings are more preferred.
また、上記(A1)及び(A2)中、L21及びL22は、それぞれ独立に、単結合又は2価の連結基を表す。
L21及びL22で表される2価の連結基としては、上記一般式(Ia)中のL1で表される2価の連結基と同義であり、好適態様も同じである。
n1は、2以上の整数を表す。上限は特に制限されないが、例えば、6以下であり、4以下が好ましく、3以下がより好ましい。
n2は、1以上の整数を表す。上限は特に制限されないが、例えば、3以下であり、2以下が好ましい。 Further, in the above (A1) and (A2), L 21 and L 22 independently represent a single bond or a divalent linking group, respectively.
The divalent linking group represented by L 21 and L 22 has the same meaning as the divalent linking group represented by L 1 in the general formula (Ia), and the preferred embodiment is also the same.
n1 represents an integer of 2 or more. The upper limit is not particularly limited, but is, for example, 6 or less, preferably 4 or less, and more preferably 3 or less.
n2 represents an integer of 1 or more. The upper limit is not particularly limited, but is, for example, 3 or less, preferably 2 or less.
L21及びL22で表される2価の連結基としては、上記一般式(Ia)中のL1で表される2価の連結基と同義であり、好適態様も同じである。
n1は、2以上の整数を表す。上限は特に制限されないが、例えば、6以下であり、4以下が好ましく、3以下がより好ましい。
n2は、1以上の整数を表す。上限は特に制限されないが、例えば、3以下であり、2以下が好ましい。 Further, in the above (A1) and (A2), L 21 and L 22 independently represent a single bond or a divalent linking group, respectively.
The divalent linking group represented by L 21 and L 22 has the same meaning as the divalent linking group represented by L 1 in the general formula (Ia), and the preferred embodiment is also the same.
n1 represents an integer of 2 or more. The upper limit is not particularly limited, but is, for example, 6 or less, preferably 4 or less, and more preferably 3 or less.
n2 represents an integer of 1 or more. The upper limit is not particularly limited, but is, for example, 3 or less, preferably 2 or less.
・一般式(b)
中でも、化合物(II)としては一般式(b)で表される化合物が好ましい。
(Mb1 +Ab -)nb-Lb-Bb -Mb2 + (b) ・ General formula (b)
Among them, the compound represented by the general formula (b) is preferable as the compound (II).
(M b1 + A b -) nb -L b -B b - M b2 + (b)
中でも、化合物(II)としては一般式(b)で表される化合物が好ましい。
(Mb1 +Ab -)nb-Lb-Bb -Mb2 + (b) ・ General formula (b)
Among them, the compound represented by the general formula (b) is preferable as the compound (II).
(M b1 + A b -) nb -L b -B b - M b2 + (b)
一般式(b)中、Mb1
+及びMb2
+は、それぞれ独立に、有機カチオン(特定有機カチオン又は特定有機カチオン以外の有機カチオン)を表す。
一般式(b)中、Mb1 +及びMb2 +は、各々上述した一般式(a)中のMa1 +及びMa2 +と同義であり、好ましい態様も同じである。 In the general formula (b), M b1 + and M b2 + independently represent organic cations (specific organic cations or organic cations other than specific organic cations).
In the general formula (b), M b1 + and M b2 + has the same meaning as each M a1 + and M in general formula (a) a2 +, it is also the same preferred embodiment.
一般式(b)中、Mb1 +及びMb2 +は、各々上述した一般式(a)中のMa1 +及びMa2 +と同義であり、好ましい態様も同じである。 In the general formula (b), M b1 + and M b2 + independently represent organic cations (specific organic cations or organic cations other than specific organic cations).
In the general formula (b), M b1 + and M b2 + has the same meaning as each M a1 + and M in general formula (a) a2 +, it is also the same preferred embodiment.
一般式(b)中、Lbは、(nb+1)価の有機基を表す。
上記(nb+1)価の有機基としては、例えば、上記(A1)及び上記(A2)で表される基等が挙げられる。なお、上記(A1)及び(A2)中、*のうち少なくともnb個はAb -との結合位置を表し、*のうち少なくとも1個はBb -との結合位置を表す。
また、上記(A1)及び(A2)中、L21及びL22で表される2価の連結基としては、上記一般式(a)中のLaで表される2価の連結基と同様の2価の連結基であることが好ましい。 In the general formula (b), L b represents an organic group having a (nb + 1) valence.
Examples of the (nb + 1) -valent organic group include the groups represented by the above (A1) and the above (A2). Incidentally, in the above (A1) and (A2), at least nb number of * is A b - represents a bonding site to the, at least one of * B b - represents a bonding site to the.
Further, in the above (A1) and (A2), the divalent linking group represented by L 21 and L 22, similar to the divalent linking group represented by L a in the general formula (a) It is preferably a divalent linking group of.
上記(nb+1)価の有機基としては、例えば、上記(A1)及び上記(A2)で表される基等が挙げられる。なお、上記(A1)及び(A2)中、*のうち少なくともnb個はAb -との結合位置を表し、*のうち少なくとも1個はBb -との結合位置を表す。
また、上記(A1)及び(A2)中、L21及びL22で表される2価の連結基としては、上記一般式(a)中のLaで表される2価の連結基と同様の2価の連結基であることが好ましい。 In the general formula (b), L b represents an organic group having a (nb + 1) valence.
Examples of the (nb + 1) -valent organic group include the groups represented by the above (A1) and the above (A2). Incidentally, in the above (A1) and (A2), at least nb number of * is A b - represents a bonding site to the, at least one of * B b - represents a bonding site to the.
Further, in the above (A1) and (A2), the divalent linking group represented by L 21 and L 22, similar to the divalent linking group represented by L a in the general formula (a) It is preferably a divalent linking group of.
一般式(b)中、Ab
-及びBb
-は、それぞれ独立に、アニオン性官能基を表す。
一般式(b)中、Ab -及びBb -は、各々上述した一般式(a)中のAa -及びBa -と同義であり、好ましい態様も同じである。 In the general formula (b), A b - and B b - each independently represent an anionic functional group.
In the general formula (b), A b - and B b -, each A a in general formula (a) - and B a - has the same meaning as, and their preferred embodiments are also the same.
一般式(b)中、Ab -及びBb -は、各々上述した一般式(a)中のAa -及びBa -と同義であり、好ましい態様も同じである。 In the general formula (b), A b - and B b - each independently represent an anionic functional group.
In the general formula (b), A b - and B b -, each A a in general formula (a) - and B a - has the same meaning as, and their preferred embodiments are also the same.
一般式(b)中、nbは2以上の整数を表す。複数のMb1
+及びAb
-は、それぞれ同じであっても異なっていてもよい。
nbの上限は特に制限されないが、例えば、6以下であり、4以下が好ましく、3以下がより好ましい。 In the general formula (b), nb represents an integer of 2 or more. The plurality of M b1 + and Ab − may be the same or different from each other.
The upper limit of nb is not particularly limited, but is, for example, 6 or less, preferably 4 or less, and more preferably 3 or less.
nbの上限は特に制限されないが、例えば、6以下であり、4以下が好ましく、3以下がより好ましい。 In the general formula (b), nb represents an integer of 2 or more. The plurality of M b1 + and Ab − may be the same or different from each other.
The upper limit of nb is not particularly limited, but is, for example, 6 or less, preferably 4 or less, and more preferably 3 or less.
ただし、一般式(b)で表される化合物のMb1
+及びMb2
+がそれぞれ水素原子で置換された(HAb)nb-Lb-BbHで表される化合物において、HAbで表される基のpKaはBbHで表される基のpKaよりも小さい。
However, in the general formula (b) M b1 + and M b2 + of the compound represented by is substituted with hydrogen atoms, respectively (HA b) a compound represented by nb -L b -B b H, in HA b The pKa of the group represented is smaller than the pKa of the group represented by B b H.
・化合物(III)
次に、化合物(III)について説明する。
化合物(III):上記構造部位Xを2つ以上と、下記構造部位Zとを有する化合物であって、活性光線又は放射線の照射によって、上記構造部位Xに由来する上記第1の酸性部位を2つ以上と上記構造部位Zとを含む酸を発生する化合物
構造部位Z:酸を中和可能な非イオン性の有機部位 -Compound (III)
Next, compound (III) will be described.
Compound (III): A compound having two or more of the structural site X and the following structural site Z, wherein the first acidic site derived from the structural site X is 2 by irradiation with active light or radiation. A compound that generates an acid containing one or more of the above structural site Z Structural site Z: Nonionic organic site capable of neutralizing the acid
次に、化合物(III)について説明する。
化合物(III):上記構造部位Xを2つ以上と、下記構造部位Zとを有する化合物であって、活性光線又は放射線の照射によって、上記構造部位Xに由来する上記第1の酸性部位を2つ以上と上記構造部位Zとを含む酸を発生する化合物
構造部位Z:酸を中和可能な非イオン性の有機部位 -Compound (III)
Next, compound (III) will be described.
Compound (III): A compound having two or more of the structural site X and the following structural site Z, wherein the first acidic site derived from the structural site X is 2 by irradiation with active light or radiation. A compound that generates an acid containing one or more of the above structural site Z Structural site Z: Nonionic organic site capable of neutralizing the acid
構造部位Z中の酸を中和可能な非イオン性の有機部位としては特に制限されず、例えば、プロトンと静電的に相互作用し得る基又は電子を有する官能基を含む有機部位であることが好ましい。
プロトンと静電的に相互作用し得る基又は電子を有する官能基としては、環状ポリエーテル等のマクロサイクリック構造を有する官能基、又はπ共役に寄与しない非共有電子対をもった窒素原子を有する官能基等が挙げられる。π共役に寄与しない非共有電子対を有する窒素原子とは、例えば、下記式に示す部分構造を有する窒素原子である。 The nonionic organic moiety capable of neutralizing the acid in the structural moiety Z is not particularly limited, and is, for example, an organic moiety containing a functional group having a group or an electron capable of electrostatically interacting with a proton. Is preferable.
As a functional group having a group or an electron capable of electrostatically interacting with a proton, a functional group having a macrocyclic structure such as a cyclic polyether or a nitrogen atom having an unshared electron pair that does not contribute to π conjugation is used. Examples thereof include functional groups having. The nitrogen atom having an unshared electron pair that does not contribute to π conjugation is, for example, a nitrogen atom having a partial structure shown in the following formula.
プロトンと静電的に相互作用し得る基又は電子を有する官能基としては、環状ポリエーテル等のマクロサイクリック構造を有する官能基、又はπ共役に寄与しない非共有電子対をもった窒素原子を有する官能基等が挙げられる。π共役に寄与しない非共有電子対を有する窒素原子とは、例えば、下記式に示す部分構造を有する窒素原子である。 The nonionic organic moiety capable of neutralizing the acid in the structural moiety Z is not particularly limited, and is, for example, an organic moiety containing a functional group having a group or an electron capable of electrostatically interacting with a proton. Is preferable.
As a functional group having a group or an electron capable of electrostatically interacting with a proton, a functional group having a macrocyclic structure such as a cyclic polyether or a nitrogen atom having an unshared electron pair that does not contribute to π conjugation is used. Examples thereof include functional groups having. The nitrogen atom having an unshared electron pair that does not contribute to π conjugation is, for example, a nitrogen atom having a partial structure shown in the following formula.
プロトンと静電的に相互作用し得る基又は電子を有する官能基の部分構造としては、例えば、クラウンエーテル構造、アザクラウンエーテル構造、1~3級アミン構造、ピリジン構造、イミダゾール構造、及びピラジン構造等が挙げられ、なかでも、1~3級アミン構造が好ましい。
Substructures of functional groups having groups or electrons that can electrostatically interact with protons include, for example, crown ether structure, aza-crown ether structure, 1-3 amine structure, pyridine structure, imidazole structure, and pyrazine structure. Etc., and among them, the 1st to 3rd grade amine structure is preferable.
上記化合物(III)において上記構造部位X中の上記カチオン部位M1
+をH+に置き換えてなる化合物PIIIにおいて、上記構造部位X中の上記カチオン部位M1
+をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数a1は、本発明の効果がより優れる点で、2.0以下が好ましく、0.5以下がより好ましく、-0.1以下が更に好ましい。なお、酸解離定数a1の下限値としては、-15.0以上が好ましい。
なお、化合物PIIIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数を複数有する場合、その最も小さい値を酸解離定数a1とみなす。
つまり、化合物(III)が、例えば、上記構造部位Xに由来する上記第1の酸性部位を2つと上記構造部位Zとを有する酸を発生する化合物である場合、化合物PIIIは「2つのHA1を有する化合物」に該当する。この化合物PIIIの酸解離定数を求めた場合、化合物PIIIが「1つのA1 -と1つのHA1とを有する化合物」となる際のpKaが酸解離定数a1である。つまり、化合物PIIIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数を複数有する場合、その最も小さい値を酸解離定数a1とみなす。
なお、上記化合物(III)において上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなる化合物PIIIとは、例えば、化合物(III)が後述する化合物(IIIa)で表される化合物である場合、HA31-L3-N(R2X)-L4-A31Hが該当する。 In the compounds PIII which the compound in (III) formed by replacing the cationic sites M 1 + in the structural moiety X to H +, HA 1 comprising substituting the cationic sites M 1 + in the structural moiety X to H + The acid dissociation constant a1 derived from the acidic moiety represented by is preferably 2.0 or less, more preferably 0.5 or less, still more preferably −0.1 or less, in that the effect of the present invention is more excellent. The lower limit of the acid dissociation constant a1 is preferably -15.0 or higher.
When compound PIII has a plurality of acid dissociation constants derived from the acidic site represented by HA 1 in which the cation site M 1 + in the structural site X is replaced with H +, the smallest value is acid. It is regarded as the dissociation constant a1.
That is, when compound (III) is, for example, a compound that generates an acid having two first acidic sites derived from the structural site X and the structural site Z, the compound PIII is "two HA 1". It corresponds to "a compound having." If asked for the acid dissociation constant of the compound PIII, compound PIII is - pKa when the "one of A 1 and a compound having one HA 1" is an acid dissociation constant a1. That is, when compound PIII has a plurality of acid dissociation constants derived from the acidic site represented by HA 1 in which the cation site M 1 + in the structural site X is replaced with H +, the smallest value is acid. It is regarded as the dissociation constant a1.
In the compound (III), the compound PIII in which the cation site M 1 + in the structural site X is replaced with H + is, for example, a compound in which the compound (III) is represented by the compound (IIIa) described later. If, HA 31- L 3- N (R 2X ) -L 4- A 31 H corresponds.
なお、化合物PIIIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数を複数有する場合、その最も小さい値を酸解離定数a1とみなす。
つまり、化合物(III)が、例えば、上記構造部位Xに由来する上記第1の酸性部位を2つと上記構造部位Zとを有する酸を発生する化合物である場合、化合物PIIIは「2つのHA1を有する化合物」に該当する。この化合物PIIIの酸解離定数を求めた場合、化合物PIIIが「1つのA1 -と1つのHA1とを有する化合物」となる際のpKaが酸解離定数a1である。つまり、化合物PIIIが、上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなるHA1で表される酸性部位に由来する酸解離定数を複数有する場合、その最も小さい値を酸解離定数a1とみなす。
なお、上記化合物(III)において上記構造部位X中の上記カチオン部位M1 +をH+に置き換えてなる化合物PIIIとは、例えば、化合物(III)が後述する化合物(IIIa)で表される化合物である場合、HA31-L3-N(R2X)-L4-A31Hが該当する。 In the compounds PIII which the compound in (III) formed by replacing the cationic sites M 1 + in the structural moiety X to H +, HA 1 comprising substituting the cationic sites M 1 + in the structural moiety X to H + The acid dissociation constant a1 derived from the acidic moiety represented by is preferably 2.0 or less, more preferably 0.5 or less, still more preferably −0.1 or less, in that the effect of the present invention is more excellent. The lower limit of the acid dissociation constant a1 is preferably -15.0 or higher.
When compound PIII has a plurality of acid dissociation constants derived from the acidic site represented by HA 1 in which the cation site M 1 + in the structural site X is replaced with H +, the smallest value is acid. It is regarded as the dissociation constant a1.
That is, when compound (III) is, for example, a compound that generates an acid having two first acidic sites derived from the structural site X and the structural site Z, the compound PIII is "two HA 1". It corresponds to "a compound having." If asked for the acid dissociation constant of the compound PIII, compound PIII is - pKa when the "one of A 1 and a compound having one HA 1" is an acid dissociation constant a1. That is, when compound PIII has a plurality of acid dissociation constants derived from the acidic site represented by HA 1 in which the cation site M 1 + in the structural site X is replaced with H +, the smallest value is acid. It is regarded as the dissociation constant a1.
In the compound (III), the compound PIII in which the cation site M 1 + in the structural site X is replaced with H + is, for example, a compound in which the compound (III) is represented by the compound (IIIa) described later. If, HA 31- L 3- N (R 2X ) -L 4- A 31 H corresponds.
化合物(III)としては特に制限されないが、例えば、下記一般式(IIIa)で表される化合物が挙げられる。
The compound (III) is not particularly limited, and examples thereof include a compound represented by the following general formula (IIIa).
一般式(IIIa)中、「M31
+A31
-」は、構造部位Xに該当する。化合物(IIIa)は、活性光線又は放射線の照射によって、HA31-L3-N(R2X)-L4-A31Hで表される酸を発生する。つまり、「M31
+A31
-」は、HA31で表される第1の酸性部位を形成する。
In the general formula (IIIa), "M 31 + A 31 -" corresponds to the structural moiety X. Compound (IIIa) produces an acid represented by HA 31- L 3- N (R 2X ) -L 4- A 31 H by irradiation with active light or radiation. That is, "M 31 + A 31 -" forms a first acidic moiety represented by HA 31.
一般式(IIIa)中、M31
+は、有機カチオンを表す。
A31 -は、アニオン性官能基を表す。
L3及びL4は、それぞれ独立に、2価の連結基を表す。
R2Xは、1価の有機基を表す。 In the general formula (IIIa), M 31 + represents an organic cation.
A 31 - represents an anionic functional group.
L 3 and L 4 each independently represent a divalent linking group.
R 2X represents a monovalent organic group.
A31 -は、アニオン性官能基を表す。
L3及びL4は、それぞれ独立に、2価の連結基を表す。
R2Xは、1価の有機基を表す。 In the general formula (IIIa), M 31 + represents an organic cation.
A 31 - represents an anionic functional group.
L 3 and L 4 each independently represent a divalent linking group.
R 2X represents a monovalent organic group.
上記一般式(IIIa)中、M31
+、及びA31
-は、各々上述した一般式(Ia)中のM11
+、及びA11
-と同義であり、好適態様も同じである。
上記一般式(IIIa)中、L3及びL4は、各々上述した一般式(Ia)中のL1と同義であり、好適態様も同じである。
上記一般式(IIIa)中、2個のM31 +同士、及び2個のA31 -同士は、各々互いに同一の基を表す。 In the general formula (IIIa), M 31 +, and A 31 - each M 11 + in general formula (Ia), and A 11 - in the above formula, preferred embodiments are also the same.
In the general formula (IIIa), L 3 and L 4 are synonymous with L 1 in the general formula (Ia) described above, and the preferred embodiments are also the same.
In the general formula (IIIa), two M 31 + each other, and two A 31 - each other, represent each mutually identical groups.
上記一般式(IIIa)中、L3及びL4は、各々上述した一般式(Ia)中のL1と同義であり、好適態様も同じである。
上記一般式(IIIa)中、2個のM31 +同士、及び2個のA31 -同士は、各々互いに同一の基を表す。 In the general formula (IIIa), M 31 +, and A 31 - each M 11 + in general formula (Ia), and A 11 - in the above formula, preferred embodiments are also the same.
In the general formula (IIIa), L 3 and L 4 are synonymous with L 1 in the general formula (Ia) described above, and the preferred embodiments are also the same.
In the general formula (IIIa), two M 31 + each other, and two A 31 - each other, represent each mutually identical groups.
一般式(IIIa)中、R2Xで表される1価の有機基としては特に制限されず、例えば、-CH2-が、-CO-、-NH-、-O-、-S-、-SO-、及び-SO2-よりなる群より選ばれる1種又は2種以上の組み合わせで置換されていてもよい、アルキル基(好ましくは炭素数1~10。直鎖状でも分岐鎖状でもよい)、シクロアルキル基(好ましくは炭素数3~15)、又はアルケニル基(好ましくは炭素数2~6)等が挙げられる。
また、上記アルキレン基、上記シクロアルキレン基、及び上記アルケニレン基は、置換基で置換されていてもよい。 In the general formula (IIIa), the monovalent organic group represented by R 2X is not particularly limited, and for example, -CH 2- is -CO-, -NH-, -O-, -S-,-. SO-, and -SO 2 - may be substituted with one or more combinations selected from the group consisting of an alkyl group (preferably may be 1-10 either linear or branched carbon atoms. ), Cycloalkyl group (preferably 3 to 15 carbon atoms), alkenyl group (preferably 2 to 6 carbon atoms) and the like.
Moreover, the said alkylene group, the said cycloalkylene group, and the said alkaneylene group may be substituted with a substituent.
また、上記アルキレン基、上記シクロアルキレン基、及び上記アルケニレン基は、置換基で置換されていてもよい。 In the general formula (IIIa), the monovalent organic group represented by R 2X is not particularly limited, and for example, -CH 2- is -CO-, -NH-, -O-, -S-,-. SO-, and -SO 2 - may be substituted with one or more combinations selected from the group consisting of an alkyl group (preferably may be 1-10 either linear or branched carbon atoms. ), Cycloalkyl group (preferably 3 to 15 carbon atoms), alkenyl group (preferably 2 to 6 carbon atoms) and the like.
Moreover, the said alkylene group, the said cycloalkylene group, and the said alkaneylene group may be substituted with a substituent.
化合物(III)としては、下記一般式(c)で表される化合物が好ましい。
(Mc +Ac -)nc-Lc (c) As the compound (III), a compound represented by the following general formula (c) is preferable.
(M c + A c -) nc -L c (c)
(Mc +Ac -)nc-Lc (c) As the compound (III), a compound represented by the following general formula (c) is preferable.
(M c + A c -) nc -L c (c)
一般式(c)中、Mc
+は、有機カチオン(特定有機カチオン又は特定有機カチオン以外の有機カチオン)を表す。
一般式(c)中、Mc +は、上述した一般式(a)中のMa1 +と同義であり、好ましい態様も同じである。 In the general formula (c), Mc + represents an organic cation (organic cation other than the specific organic cation or the specific organic cation).
In the general formula (c), M c + has the same meaning as M a1 + in general formula (a), and their preferred embodiments are also the same.
一般式(c)中、Mc +は、上述した一般式(a)中のMa1 +と同義であり、好ましい態様も同じである。 In the general formula (c), Mc + represents an organic cation (organic cation other than the specific organic cation or the specific organic cation).
In the general formula (c), M c + has the same meaning as M a1 + in general formula (a), and their preferred embodiments are also the same.
一般式(c)中、Ac
-はアニオン性官能基を表す。
一般式(c)中、Ac -は、上述した一般式(a)中のAa -と同義であり、好ましい態様も同じである。 In the general formula (c), Ac − represents an anionic functional group.
In the general formula (c), Ac − has the same meaning as A a − in the general formula (a) described above, and the preferred embodiment is also the same.
一般式(c)中、Ac -は、上述した一般式(a)中のAa -と同義であり、好ましい態様も同じである。 In the general formula (c), Ac − represents an anionic functional group.
In the general formula (c), Ac − has the same meaning as A a − in the general formula (a) described above, and the preferred embodiment is also the same.
一般式(c)中、ncは2以上の整数を表す。複数のMc
+及びAc
-は、それぞれ同じであっても異なっていてもよい。
ncの上限は特に制限されないが、例えば、6以下であり、4以下が好ましく、3以下がより好ましい。 In the general formula (c), nc represents an integer of 2 or more. The plurality of Mc + and Ac − may be the same or different from each other.
The upper limit of nc is not particularly limited, but is, for example, 6 or less, preferably 4 or less, and more preferably 3 or less.
ncの上限は特に制限されないが、例えば、6以下であり、4以下が好ましく、3以下がより好ましい。 In the general formula (c), nc represents an integer of 2 or more. The plurality of Mc + and Ac − may be the same or different from each other.
The upper limit of nc is not particularly limited, but is, for example, 6 or less, preferably 4 or less, and more preferably 3 or less.
Lcは、酸を中和可能な非イオン性の有機部位を表す。
Lcの好ましい態様としては、上述の構造部位Zと同様である。 L c represents a nonionic organic moiety capable of neutralizing the acid.
A preferred embodiment of L c is the same as that of the structural part Z described above.
Lcの好ましい態様としては、上述の構造部位Zと同様である。 L c represents a nonionic organic moiety capable of neutralizing the acid.
A preferred embodiment of L c is the same as that of the structural part Z described above.
化合物(P)の分子量は300~3000が好ましく、500~2000がより好ましく、700~1500が更に好ましい。
The molecular weight of compound (P) is preferably 300 to 3000, more preferably 500 to 2000, and even more preferably 700 to 1500.
以下に化合物(P)を例示する。
以下の化合物(P)中の有機カチオンと有機アニオンとの組み合わせは適宜入れ替えてもよい。
化合物(P)の有機アニオンに付された数値は、有機アニオンにおける各アニオン性官能基が有機カチオンに代えてH+と結合した場合に形成される各酸性部位に由来する酸解離定数を示す。 The compound (P) is illustrated below.
The combination of the organic cation and the organic anion in the following compound (P) may be replaced as appropriate.
The numerical value attached to the organic anion of the compound (P) indicates the acid dissociation constant derived from each acidic site formed when each anionic functional group in the organic anion is bonded to H + instead of the organic cation.
以下の化合物(P)中の有機カチオンと有機アニオンとの組み合わせは適宜入れ替えてもよい。
化合物(P)の有機アニオンに付された数値は、有機アニオンにおける各アニオン性官能基が有機カチオンに代えてH+と結合した場合に形成される各酸性部位に由来する酸解離定数を示す。 The compound (P) is illustrated below.
The combination of the organic cation and the organic anion in the following compound (P) may be replaced as appropriate.
The numerical value attached to the organic anion of the compound (P) indicates the acid dissociation constant derived from each acidic site formed when each anionic functional group in the organic anion is bonded to H + instead of the organic cation.
本発明の組成物中の光酸発生剤の含有量は特に制限されないが、本発明の効果がより優れる点で、本発明の組成物の全固形分に対して、5質量%以上が好ましく、9質量%以上がより好ましく、15質量%以上が更に好ましい。また、上記含有量は、45質量%以下が好ましく、40質量%以下がより好ましく、35質量%以下が更に好ましい。
光酸発生剤は、1種単独で使用してもよく、2種以上を使用してもよい。 The content of the photoacid generator in the composition of the present invention is not particularly limited, but is preferably 5% by mass or more based on the total solid content of the composition of the present invention in that the effect of the present invention is more excellent. 9% by mass or more is more preferable, and 15% by mass or more is further preferable. The content is preferably 45% by mass or less, more preferably 40% by mass or less, and further preferably 35% by mass or less.
The photoacid generator may be used alone or in combination of two or more.
光酸発生剤は、1種単独で使用してもよく、2種以上を使用してもよい。 The content of the photoacid generator in the composition of the present invention is not particularly limited, but is preferably 5% by mass or more based on the total solid content of the composition of the present invention in that the effect of the present invention is more excellent. 9% by mass or more is more preferable, and 15% by mass or more is further preferable. The content is preferably 45% by mass or less, more preferably 40% by mass or less, and further preferably 35% by mass or less.
The photoacid generator may be used alone or in combination of two or more.
〔(D)酸拡散制御剤〕
本発明の組成物は、酸拡散制御剤を更に含んでいてもよい。酸拡散制御剤は、光酸発生剤から生じた酸をトラップするクエンチャーとして作用し、レジスト膜中における酸の拡散現象を制御する役割を果たす。
酸拡散制御剤は、例えば、塩基性化合物であってもよい。
塩基性化合物は、下記一般式(A)~一般式(E)で示される構造を有する化合物が好ましい。 [(D) Acid diffusion control agent]
The composition of the present invention may further contain an acid diffusion control agent. The acid diffusion control agent acts as a quencher for trapping the acid generated from the photoacid generator, and plays a role of controlling the acid diffusion phenomenon in the resist film.
The acid diffusion control agent may be, for example, a basic compound.
The basic compound is preferably a compound having a structure represented by the following general formulas (A) to (E).
本発明の組成物は、酸拡散制御剤を更に含んでいてもよい。酸拡散制御剤は、光酸発生剤から生じた酸をトラップするクエンチャーとして作用し、レジスト膜中における酸の拡散現象を制御する役割を果たす。
酸拡散制御剤は、例えば、塩基性化合物であってもよい。
塩基性化合物は、下記一般式(A)~一般式(E)で示される構造を有する化合物が好ましい。 [(D) Acid diffusion control agent]
The composition of the present invention may further contain an acid diffusion control agent. The acid diffusion control agent acts as a quencher for trapping the acid generated from the photoacid generator, and plays a role of controlling the acid diffusion phenomenon in the resist film.
The acid diffusion control agent may be, for example, a basic compound.
The basic compound is preferably a compound having a structure represented by the following general formulas (A) to (E).
一般式(A)及び一般式(E)中、R200、R201及びR202は、同一でも異なってもよく、水素原子、アルキル基(好ましくは炭素数1~20)、シクロアルキル基(好ましくは炭素数3~20)又は、アリール基(好ましくは炭素数6~20)を表し、ここで、R201とR202は、互いに結合して環を形成してもよい。
In the general formula (A) and the general formula (E), R 200 , R 201 and R 202 may be the same or different, and may be the same or different, and may be a hydrogen atom, an alkyl group (preferably 1 to 20 carbon atoms), or a cycloalkyl group (preferably 1 to 20 carbon atoms). Represents an aryl group (preferably 6 to 20 carbon atoms), and R 201 and R 202 may be bonded to each other to form a ring.
上記アルキル基について、置換基を有するアルキル基は、炭素数1~20のアミノアルキル基、炭素数1~20のヒドロキシアルキル基、又は、炭素数1~20のシアノアルキル基が好ましい。
R203、R204、R205及びR206は、同一でも異なってもよく、炭素数1~20のアルキル基を表す。
これら一般式(A)及び一般式(E)中のアルキル基は、無置換であることがより好ましい。 Regarding the above alkyl group, the alkyl group having a substituent is preferably an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms.
R 203 , R 204 , R 205 and R 206 may be the same or different and represent an alkyl group having 1 to 20 carbon atoms.
It is more preferable that the alkyl groups in the general formula (A) and the general formula (E) are unsubstituted.
R203、R204、R205及びR206は、同一でも異なってもよく、炭素数1~20のアルキル基を表す。
これら一般式(A)及び一般式(E)中のアルキル基は、無置換であることがより好ましい。 Regarding the above alkyl group, the alkyl group having a substituent is preferably an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms.
R 203 , R 204 , R 205 and R 206 may be the same or different and represent an alkyl group having 1 to 20 carbon atoms.
It is more preferable that the alkyl groups in the general formula (A) and the general formula (E) are unsubstituted.
塩基性化合物に関しては、国際公開第2018/193954号の段落[0190]~[0197]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
Regarding basic compounds, the descriptions in paragraphs [0190] to [0197] of International Publication No. 2018/193954 can be referred to, and these contents are incorporated in the present specification.
酸拡散制御剤は、プロトンアクセプター性官能基を有し、かつ、活性光線又は放射線の照射により分解してプロトンアクセプター性が低下、消失、又はプロトンアクセプター性から酸性に変化した化合物を発生する化合物(PA)であってもよい。
上記化合物(PA)に関しては、国際公開第2018/193954号の段落[0198]~[0203]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 The acid diffusion control agent has a proton-accepting functional group and is decomposed by irradiation with active light or radiation to reduce or eliminate the proton accepting property, or generate a compound in which the proton accepting property is changed to acidic. It may be a compound (PA).
Regarding the above compound (PA), the description in paragraphs [0198] to [0203] of International Publication No. 2018/193954 can be referred to, and these contents are incorporated in the present specification.
上記化合物(PA)に関しては、国際公開第2018/193954号の段落[0198]~[0203]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 The acid diffusion control agent has a proton-accepting functional group and is decomposed by irradiation with active light or radiation to reduce or eliminate the proton accepting property, or generate a compound in which the proton accepting property is changed to acidic. It may be a compound (PA).
Regarding the above compound (PA), the description in paragraphs [0198] to [0203] of International Publication No. 2018/193954 can be referred to, and these contents are incorporated in the present specification.
化合物(PA)としては、例えば、特開2014-41328号公報の段落[0421]~[0428]、特開2014-134686号公報の段落[0108]~[0116]に記載されたものを援用でき、これらの内容は本明細書に組み込まれる。
As the compound (PA), for example, those described in paragraphs [0421] to [0428] of JP-A-2014-413328 and paragraphs [0108]-[0116] of JP-A-2014-134686 can be incorporated. , These contents are incorporated herein by reference.
窒素原子を有し、酸の作用により脱離する基を有する低分子化合物も酸拡散制御剤として使用できる。上記低分子化合物は、酸の作用により脱離する基を窒素原子上に有するアミン誘導体が好ましい。
酸の作用により脱離する基は、アセタール基、カルボネート基、カルバメート基、3級エステル基、3級水酸基、又は、ヘミアミナールエーテル基が好ましく、カルバメート基、又は、ヘミアミナールエーテル基がより好ましい。
低分子化合物の分子量は、100~1000が好ましく、100~700がより好ましく、100~500が更に好ましい。
低分子化合物は、窒素原子上に保護基を有するカルバメート基を有してもよい。 Small molecule compounds having a nitrogen atom and having a group desorbed by the action of an acid can also be used as an acid diffusion control agent. The small molecule compound is preferably an amine derivative having a group on the nitrogen atom that is eliminated by the action of an acid.
The group eliminated by the action of the acid is preferably an acetal group, a carbonate group, a carbamate group, a tertiary ester group, a tertiary hydroxyl group, or a hemiaminol ether group, and a carbamate group or a hemiaminol ether group is more preferable. preferable.
The molecular weight of the small molecule compound is preferably 100 to 1000, more preferably 100 to 700, and even more preferably 100 to 500.
The small molecule compound may have a carbamate group having a protecting group on the nitrogen atom.
酸の作用により脱離する基は、アセタール基、カルボネート基、カルバメート基、3級エステル基、3級水酸基、又は、ヘミアミナールエーテル基が好ましく、カルバメート基、又は、ヘミアミナールエーテル基がより好ましい。
低分子化合物の分子量は、100~1000が好ましく、100~700がより好ましく、100~500が更に好ましい。
低分子化合物は、窒素原子上に保護基を有するカルバメート基を有してもよい。 Small molecule compounds having a nitrogen atom and having a group desorbed by the action of an acid can also be used as an acid diffusion control agent. The small molecule compound is preferably an amine derivative having a group on the nitrogen atom that is eliminated by the action of an acid.
The group eliminated by the action of the acid is preferably an acetal group, a carbonate group, a carbamate group, a tertiary ester group, a tertiary hydroxyl group, or a hemiaminol ether group, and a carbamate group or a hemiaminol ether group is more preferable. preferable.
The molecular weight of the small molecule compound is preferably 100 to 1000, more preferably 100 to 700, and even more preferably 100 to 500.
The small molecule compound may have a carbamate group having a protecting group on the nitrogen atom.
酸拡散制御剤の具体例として、国際公開第2018/193954号の段落[0204]~[0206]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。また、本発明の組成物は上記以外の酸拡散制御剤を含有していてもよい。
As a specific example of the acid diffusion control agent, the description in paragraphs [0204] to [0206] of International Publication No. 2018/193954 can be taken into consideration, and these contents are incorporated in the present specification. Further, the composition of the present invention may contain an acid diffusion control agent other than the above.
本発明の組成物が酸拡散制御剤を含む場合、酸拡散制御剤の含有量は、本発明の組成物の全固形分に対して、0.001~15質量%が好ましく、0.01~8質量%がより好ましい。
酸拡散制御剤は、1種単独で使用してもよいし、2種以上を使用してもよい。 When the composition of the present invention contains an acid diffusion control agent, the content of the acid diffusion control agent is preferably 0.001 to 15% by mass, preferably 0.01 to 15% by mass, based on the total solid content of the composition of the present invention. 8% by mass is more preferable.
The acid diffusion control agent may be used alone or in combination of two or more.
酸拡散制御剤は、1種単独で使用してもよいし、2種以上を使用してもよい。 When the composition of the present invention contains an acid diffusion control agent, the content of the acid diffusion control agent is preferably 0.001 to 15% by mass, preferably 0.01 to 15% by mass, based on the total solid content of the composition of the present invention. 8% by mass is more preferable.
The acid diffusion control agent may be used alone or in combination of two or more.
光酸発生剤と酸拡散制御剤との本発明の組成物中の使用割合は、光酸発生剤/酸拡散制御剤(モル比)=2.5~300であることが好ましい。感度及び解像度の点からモル比は2.5以上が好ましく、露光後加熱処理までの経時でのレジストパターンの太りによる解像度の低下抑制の点からモル比は300以下が好ましい。光酸発生剤/酸拡散制御剤(モル比)は、5.0~200がより好ましく、7.0~150が更に好ましい。
The ratio of the photoacid generator and the acid diffusion control agent in the composition of the present invention is preferably photoacid generator / acid diffusion control agent (molar ratio) = 2.5 to 300. The molar ratio is preferably 2.5 or more from the viewpoint of sensitivity and resolution, and the molar ratio is preferably 300 or less from the viewpoint of suppressing a decrease in resolution due to the thickening of the resist pattern over time from exposure to heat treatment. The photoacid generator / acid diffusion control agent (molar ratio) is more preferably 5.0 to 200, and even more preferably 7.0 to 150.
酸拡散制御剤としては、例えば、特開2013-11833号公報の段落[0140]~[0144]に記載の化合物(アミン化合物、アミド基含有化合物、ウレア化合物、及び、含窒素複素環化合物等)も挙げられる。
Examples of the acid diffusion control agent include the compounds described in paragraphs [0140] to [0144] of JP2013-11833A (amine compounds, amide group-containing compounds, urea compounds, nitrogen-containing heterocyclic compounds, etc.). Can also be mentioned.
〔(E)疎水性樹脂〕
本発明の組成物は、上記樹脂(A)とは別に、樹脂(A)とは異なる疎水性樹脂を含んでいてもよい。 [(E) Hydrophobic resin]
The composition of the present invention may contain a hydrophobic resin different from the resin (A) in addition to the resin (A).
本発明の組成物は、上記樹脂(A)とは別に、樹脂(A)とは異なる疎水性樹脂を含んでいてもよい。 [(E) Hydrophobic resin]
The composition of the present invention may contain a hydrophobic resin different from the resin (A) in addition to the resin (A).
疎水性樹脂は、膜表層への偏在化の点から、“フッ素原子”、“珪素原子”、及び、“樹脂の側鎖部分に含まれたCH3部分構造”のいずれか1種以上を有することが好ましく、2種以上を有することがより好ましい。また、上記疎水性樹脂は、炭素数5以上の炭化水素基を有することが好ましい。これらの基は樹脂の主鎖中に有していても、側鎖に置換していてもよい。
Hydrophobic resin from the viewpoint of uneven distribution in the film surface layer, "fluorine atom", "silicon atom", and has any one or more "CH 3 partial structure contained in the side chain portion of the resin" It is preferable, and it is more preferable to have two or more kinds. Further, the hydrophobic resin preferably has a hydrocarbon group having 5 or more carbon atoms. These groups may be contained in the main chain of the resin or may be substituted in the side chain.
疎水性樹脂に関しては、特開2014-010245号公報の段落[0315]~[0415]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
Regarding the hydrophobic resin, the descriptions in paragraphs [0315] to [0415] of JP2014-010245A can be referred to, and these contents are incorporated in the present specification.
なお、疎水性樹脂はこの他にも特開2011-248019号公報、特開2010-175859号公報、特開2012-032544号公報記載の樹脂も好ましく使用できる。
As the hydrophobic resin, the resins described in JP2011-24801A, JP2010-175859, and JP2012-032544 can also be preferably used.
本発明の組成物が疎水性樹脂を含む場合、疎水性樹脂の含有量は、本発明の組成物の全固形分に対して、0.01~20質量%が好ましく、0.1~15質量%がより好ましい。
When the composition of the present invention contains a hydrophobic resin, the content of the hydrophobic resin is preferably 0.01 to 20% by mass, preferably 0.1 to 15% by mass, based on the total solid content of the composition of the present invention. % Is more preferable.
〔(F)溶剤〕
本発明の組成物は、溶剤を含んでいてもよい。
溶剤は特に限定されないが、(M1)プロピレングリコールモノアルキルエーテルカルボキシレート、並びに、(M2)プロピレングリコールモノアルキルエーテル、乳酸エステル、酢酸エステル、アルコキシプロピオン酸エステル、鎖状ケトン、環状ケトン、ラクトン、及び、アルキレンカーボネートからなる群より選択される少なくとも1つの少なくとも一方を含んでいることが好ましい。なお、この溶剤は成分(M1)及び(M2)以外の成分を更に含んでいてもよい。
溶剤に関しては、国際公開第2019/058890号の段落[0187]~[0197]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 [(F) Solvent]
The composition of the present invention may contain a solvent.
The solvent is not particularly limited, but (M1) propylene glycol monoalkyl ether carboxylate, and (M2) propylene glycol monoalkyl ether, lactic acid ester, acetate ester, alkoxypropionic acid ester, chain ketone, cyclic ketone, lactone, and , At least one selected from the group consisting of alkylene carbonates. The solvent may further contain components other than the components (M1) and (M2).
Regarding the solvent, the description in paragraphs [0187] to [0197] of International Publication No. 2019/08890 can be referred to, and these contents are incorporated in the present specification.
本発明の組成物は、溶剤を含んでいてもよい。
溶剤は特に限定されないが、(M1)プロピレングリコールモノアルキルエーテルカルボキシレート、並びに、(M2)プロピレングリコールモノアルキルエーテル、乳酸エステル、酢酸エステル、アルコキシプロピオン酸エステル、鎖状ケトン、環状ケトン、ラクトン、及び、アルキレンカーボネートからなる群より選択される少なくとも1つの少なくとも一方を含んでいることが好ましい。なお、この溶剤は成分(M1)及び(M2)以外の成分を更に含んでいてもよい。
溶剤に関しては、国際公開第2019/058890号の段落[0187]~[0197]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 [(F) Solvent]
The composition of the present invention may contain a solvent.
The solvent is not particularly limited, but (M1) propylene glycol monoalkyl ether carboxylate, and (M2) propylene glycol monoalkyl ether, lactic acid ester, acetate ester, alkoxypropionic acid ester, chain ketone, cyclic ketone, lactone, and , At least one selected from the group consisting of alkylene carbonates. The solvent may further contain components other than the components (M1) and (M2).
Regarding the solvent, the description in paragraphs [0187] to [0197] of International Publication No. 2019/08890 can be referred to, and these contents are incorporated in the present specification.
本発明の組成物中の溶剤の含有量は、固形分濃度が0.5~30質量%となるように定めることが好ましく、1~20質量%となるように定めることがより好ましい。こうすると、本発明の組成物の塗布性を更に向上させられる。
固形分濃度とは、本発明の組成物の総質量に対する、溶剤を除く他の成分の質量の質量百分率である。 The content of the solvent in the composition of the present invention is preferably set so that the solid content concentration is 0.5 to 30% by mass, and more preferably 1 to 20% by mass. In this way, the coatability of the composition of the present invention can be further improved.
The solid content concentration is the mass percentage of the mass of other components excluding the solvent with respect to the total mass of the composition of the present invention.
固形分濃度とは、本発明の組成物の総質量に対する、溶剤を除く他の成分の質量の質量百分率である。 The content of the solvent in the composition of the present invention is preferably set so that the solid content concentration is 0.5 to 30% by mass, and more preferably 1 to 20% by mass. In this way, the coatability of the composition of the present invention can be further improved.
The solid content concentration is the mass percentage of the mass of other components excluding the solvent with respect to the total mass of the composition of the present invention.
〔(H)界面活性剤〕
本発明の組成物は、界面活性剤を含んでいてもよい。界面活性剤を含むと、密着性により優れ、現像欠陥のより少ないパターンを形成できる。
界面活性剤は、フッ素系及び/又はシリコン系界面活性剤が好ましい。
界面活性剤に関しては、国際公開第2019/058890号の段落[0183]~[0184]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 [(H) Surfactant]
The composition of the present invention may contain a surfactant. When a surfactant is included, a pattern having better adhesion and fewer development defects can be formed.
The surfactant is preferably a fluorine-based and / or silicon-based surfactant.
Regarding surfactants, the descriptions in paragraphs [0183] to [0184] of International Publication No. 2019/088900 can be referred to, and these contents are incorporated in the present specification.
本発明の組成物は、界面活性剤を含んでいてもよい。界面活性剤を含むと、密着性により優れ、現像欠陥のより少ないパターンを形成できる。
界面活性剤は、フッ素系及び/又はシリコン系界面活性剤が好ましい。
界面活性剤に関しては、国際公開第2019/058890号の段落[0183]~[0184]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 [(H) Surfactant]
The composition of the present invention may contain a surfactant. When a surfactant is included, a pattern having better adhesion and fewer development defects can be formed.
The surfactant is preferably a fluorine-based and / or silicon-based surfactant.
Regarding surfactants, the descriptions in paragraphs [0183] to [0184] of International Publication No. 2019/088900 can be referred to, and these contents are incorporated in the present specification.
本発明の組成物が界面活性剤を含む場合、界面活性剤の含有量は、組成物の全固形分に対して、0.0001~2質量%が好ましく、0.0005~1質量%がより好ましい。
When the composition of the present invention contains a surfactant, the content of the surfactant is preferably 0.0001 to 2% by mass, more preferably 0.0005 to 1% by mass, based on the total solid content of the composition. preferable.
〔(G)その他の添加剤〕
本発明の組成物は、溶解阻止化合物、染料、可塑剤、光増感剤、光吸収剤、及び/又は、現像液に対する溶解性を促進させる化合物(例えば、分子量1000以下のフェノール化合物、又はカルボン酸基を含んだ脂環族若しくは脂肪族化合物)を更に含んでいてもよい。 [(G) Other additives]
The composition of the present invention comprises a dissolution inhibitory compound, a dye, a plasticizer, a photosensitizer, a light absorber, and / or a compound that promotes solubility in a developing solution (for example, a phenol compound having a molecular weight of 1000 or less, or a carboxylic acid). It may further contain an alicyclic or aliphatic compound containing an acid group).
本発明の組成物は、溶解阻止化合物、染料、可塑剤、光増感剤、光吸収剤、及び/又は、現像液に対する溶解性を促進させる化合物(例えば、分子量1000以下のフェノール化合物、又はカルボン酸基を含んだ脂環族若しくは脂肪族化合物)を更に含んでいてもよい。 [(G) Other additives]
The composition of the present invention comprises a dissolution inhibitory compound, a dye, a plasticizer, a photosensitizer, a light absorber, and / or a compound that promotes solubility in a developing solution (for example, a phenol compound having a molecular weight of 1000 or less, or a carboxylic acid). It may further contain an alicyclic or aliphatic compound containing an acid group).
本発明の組成物は、溶解阻止化合物を更に含んでいてもよい。ここで「溶解阻止化合物」とは、酸の作用により分解して有機系現像液中での溶解度が減少する、分子量3000以下の化合物である。
The composition of the present invention may further contain a dissolution inhibitory compound. Here, the "dissolution-inhibiting compound" is a compound having a molecular weight of 3000 or less, which is decomposed by the action of an acid to reduce its solubility in an organic developer.
[用途]
本発明の組成物は、活性光線又は放射線の照射により反応して性質が変化する感活性光線性又は感放射線性樹脂組成物に関する。更に詳しくは、本発明の組成物は、IC(Integrated Circuit)等の半導体製造工程、液晶若しくはサーマルヘッド等の回路基板の製造、インプリント用モールド構造体の作製、その他のフォトファブリケーション工程、又は平版印刷版、若しくは酸硬化性組成物の製造に使用される感活性光線性又は感放射線性樹脂組成物に関する。本発明において形成されるパターンは、エッチング工程、イオンインプランテーション工程、バンプ電極形成工程、再配線形成工程、及びMEMS(Micro Electro Mechanical Systems)等において使用できる。 [Use]
The composition of the present invention relates to a sensitive light-sensitive or radiation-sensitive resin composition whose properties change in response to irradiation with active light or radiation. More specifically, the composition of the present invention comprises a semiconductor manufacturing process such as an IC (Integrated Circuit), a circuit substrate manufacturing such as a liquid crystal or a thermal head, a molding structure for imprinting, another photofabrication step, or a photofabrication step. The present invention relates to a lithographic printing plate or a radiation-sensitive or radiation-sensitive resin composition used for producing an acid-curable composition. The pattern formed in the present invention can be used in an etching step, an ion implantation step, a bump electrode forming step, a rewiring forming step, a MEMS (Micro Electro Mechanical Systems), and the like.
本発明の組成物は、活性光線又は放射線の照射により反応して性質が変化する感活性光線性又は感放射線性樹脂組成物に関する。更に詳しくは、本発明の組成物は、IC(Integrated Circuit)等の半導体製造工程、液晶若しくはサーマルヘッド等の回路基板の製造、インプリント用モールド構造体の作製、その他のフォトファブリケーション工程、又は平版印刷版、若しくは酸硬化性組成物の製造に使用される感活性光線性又は感放射線性樹脂組成物に関する。本発明において形成されるパターンは、エッチング工程、イオンインプランテーション工程、バンプ電極形成工程、再配線形成工程、及びMEMS(Micro Electro Mechanical Systems)等において使用できる。 [Use]
The composition of the present invention relates to a sensitive light-sensitive or radiation-sensitive resin composition whose properties change in response to irradiation with active light or radiation. More specifically, the composition of the present invention comprises a semiconductor manufacturing process such as an IC (Integrated Circuit), a circuit substrate manufacturing such as a liquid crystal or a thermal head, a molding structure for imprinting, another photofabrication step, or a photofabrication step. The present invention relates to a lithographic printing plate or a radiation-sensitive or radiation-sensitive resin composition used for producing an acid-curable composition. The pattern formed in the present invention can be used in an etching step, an ion implantation step, a bump electrode forming step, a rewiring forming step, a MEMS (Micro Electro Mechanical Systems), and the like.
[感活性光線性又は感放射線性膜]
本発明は、本発明の感活性光線又は感放射線性組成物により形成された感活性光線性又は感放射線性膜にも関する。このような膜は、例えば、本発明の組成物が基板等の支持体上に塗布されることにより形成される。この膜の厚みは、0.02~0.1μmが好ましい。
基板上に塗布する方法としては、スピンコート、ロールコート、フローコート、ディップコート、スプレーコート、ドクターコート等の適当な塗布方法により基板上に塗布されるが、スピン塗布が好ましく、その回転数は1000~3000rpm(rotations per minute)が好ましい。塗布膜は60~150℃で1~20分間、好ましくは80~120℃で1~10分間プリベークして薄膜を形成する。
被加工基板及びその最表層を構成する材料は、例えば、半導体用ウエハの場合、シリコンウエハを用いることができ、最表層となる材料の例としては、Si、SiO2、SiN、SiON、TiN、WSi、BPSG、SOG、有機反射防止膜等が挙げられる。 [Actinic cheilitis or radiation-sensitive film]
The present invention also relates to a sensitive light or radiation sensitive film formed by the sensitive light or radiation composition of the present invention. Such a film is formed, for example, by applying the composition of the present invention onto a support such as a substrate. The thickness of this film is preferably 0.02 to 0.1 μm.
As a method of coating on the substrate, it is applied on the substrate by an appropriate coating method such as spin coating, roll coating, flow coating, dip coating, spray coating, doctor coating, etc., but spin coating is preferable, and the number of rotations thereof is high. 1000-3000 rpm (rotations per minute) is preferable. The coating film is prebaked at 60 to 150 ° C. for 1 to 20 minutes, preferably 80 to 120 ° C. for 1 to 10 minutes to form a thin film.
As the material forming the substrate to be processed and its outermost layer, for example, in the case of a semiconductor wafer, a silicon wafer can be used, and examples of the material to be the outermost layer include Si, SiO 2 , SiN, SiON, TiN, and the like. WSi, BPSG, SOG, organic antireflection film and the like can be mentioned.
本発明は、本発明の感活性光線又は感放射線性組成物により形成された感活性光線性又は感放射線性膜にも関する。このような膜は、例えば、本発明の組成物が基板等の支持体上に塗布されることにより形成される。この膜の厚みは、0.02~0.1μmが好ましい。
基板上に塗布する方法としては、スピンコート、ロールコート、フローコート、ディップコート、スプレーコート、ドクターコート等の適当な塗布方法により基板上に塗布されるが、スピン塗布が好ましく、その回転数は1000~3000rpm(rotations per minute)が好ましい。塗布膜は60~150℃で1~20分間、好ましくは80~120℃で1~10分間プリベークして薄膜を形成する。
被加工基板及びその最表層を構成する材料は、例えば、半導体用ウエハの場合、シリコンウエハを用いることができ、最表層となる材料の例としては、Si、SiO2、SiN、SiON、TiN、WSi、BPSG、SOG、有機反射防止膜等が挙げられる。 [Actinic cheilitis or radiation-sensitive film]
The present invention also relates to a sensitive light or radiation sensitive film formed by the sensitive light or radiation composition of the present invention. Such a film is formed, for example, by applying the composition of the present invention onto a support such as a substrate. The thickness of this film is preferably 0.02 to 0.1 μm.
As a method of coating on the substrate, it is applied on the substrate by an appropriate coating method such as spin coating, roll coating, flow coating, dip coating, spray coating, doctor coating, etc., but spin coating is preferable, and the number of rotations thereof is high. 1000-3000 rpm (rotations per minute) is preferable. The coating film is prebaked at 60 to 150 ° C. for 1 to 20 minutes, preferably 80 to 120 ° C. for 1 to 10 minutes to form a thin film.
As the material forming the substrate to be processed and its outermost layer, for example, in the case of a semiconductor wafer, a silicon wafer can be used, and examples of the material to be the outermost layer include Si, SiO 2 , SiN, SiON, TiN, and the like. WSi, BPSG, SOG, organic antireflection film and the like can be mentioned.
[マスクブランクス]
また、本発明は、上記のようにして得られる感活性光線性又は感放射線性樹脂組成物を塗布した、感活性光線性又は感放射線性膜を具備したマスクブランクスにも関する。
マスクブランクスに関しては、特開2018-10299号公報の段落[0265]~[0271]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 [Mask blanks]
The present invention also relates to a mask blank provided with an actinic cheilitis or radiation-sensitive film coated with the actinic cheilitis or radiation-sensitive resin composition obtained as described above.
Regarding mask blanks, the descriptions in paragraphs [0265] to [0271] of JP-A-2018-10299 can be referred to, and these contents are incorporated in the present specification.
また、本発明は、上記のようにして得られる感活性光線性又は感放射線性樹脂組成物を塗布した、感活性光線性又は感放射線性膜を具備したマスクブランクスにも関する。
マスクブランクスに関しては、特開2018-10299号公報の段落[0265]~[0271]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 [Mask blanks]
The present invention also relates to a mask blank provided with an actinic cheilitis or radiation-sensitive film coated with the actinic cheilitis or radiation-sensitive resin composition obtained as described above.
Regarding mask blanks, the descriptions in paragraphs [0265] to [0271] of JP-A-2018-10299 can be referred to, and these contents are incorporated in the present specification.
[パターン形成方法]
本発明の組成物を用いたパターン形成方法の手順は特に制限されないが、以下の工程を有することが好ましい。
工程1:本発明の組成物を用いて、基板上にレジスト膜を形成する工程
工程2:レジスト膜を(好ましくは、電子線(EB)、EUVで)露光する工程
工程3:現像液を用いて、露光されたレジスト膜を現像し、パターンを形成する工程
以下、上記それぞれの工程の手順について詳述する。 [Pattern formation method]
The procedure of the pattern forming method using the composition of the present invention is not particularly limited, but it is preferable to have the following steps.
Step 1: A step of forming a resist film on a substrate using the composition of the present invention Step 2: A step of exposing the resist film (preferably with an electron beam (EB) or EUV) Step 3: Using a developing solution Steps for developing the exposed resist film and forming a pattern Hereinafter, the procedures for each of the above steps will be described in detail.
本発明の組成物を用いたパターン形成方法の手順は特に制限されないが、以下の工程を有することが好ましい。
工程1:本発明の組成物を用いて、基板上にレジスト膜を形成する工程
工程2:レジスト膜を(好ましくは、電子線(EB)、EUVで)露光する工程
工程3:現像液を用いて、露光されたレジスト膜を現像し、パターンを形成する工程
以下、上記それぞれの工程の手順について詳述する。 [Pattern formation method]
The procedure of the pattern forming method using the composition of the present invention is not particularly limited, but it is preferable to have the following steps.
Step 1: A step of forming a resist film on a substrate using the composition of the present invention Step 2: A step of exposing the resist film (preferably with an electron beam (EB) or EUV) Step 3: Using a developing solution Steps for developing the exposed resist film and forming a pattern Hereinafter, the procedures for each of the above steps will be described in detail.
<工程1:レジスト膜形成工程>
工程1は、本発明の組成物を用いて、基板上にレジスト膜を形成する工程である。本発明の組成物は上述の通りである。 <Step 1: Resist film forming step>
Step 1 is a step of forming a resist film on a substrate using the composition of the present invention. The composition of the present invention is as described above.
工程1は、本発明の組成物を用いて、基板上にレジスト膜を形成する工程である。本発明の組成物は上述の通りである。 <Step 1: Resist film forming step>
Step 1 is a step of forming a resist film on a substrate using the composition of the present invention. The composition of the present invention is as described above.
本発明の組成物を用いて基板上にレジスト膜を形成する方法としては、例えば、本発明の組成物を基板上に塗布する方法が挙げられる。
なお、塗布前に本発明の組成物を必要に応じてフィルター濾過することが好ましい。フィルターのポアサイズは、0.1μm以下が好ましく、0.05μm以下がより好ましく、0.03μm以下が更に好ましい。また、フィルターは、ポリテトラフロロエチレン製、ポリエチレン製、又は、ナイロン製が好ましい。 Examples of the method of forming a resist film on a substrate using the composition of the present invention include a method of applying the composition of the present invention on a substrate.
It is preferable that the composition of the present invention is filtered by a filter as necessary before coating. The pore size of the filter is preferably 0.1 μm or less, more preferably 0.05 μm or less, and even more preferably 0.03 μm or less. The filter is preferably made of polytetrafluoroethylene, polyethylene, or nylon.
なお、塗布前に本発明の組成物を必要に応じてフィルター濾過することが好ましい。フィルターのポアサイズは、0.1μm以下が好ましく、0.05μm以下がより好ましく、0.03μm以下が更に好ましい。また、フィルターは、ポリテトラフロロエチレン製、ポリエチレン製、又は、ナイロン製が好ましい。 Examples of the method of forming a resist film on a substrate using the composition of the present invention include a method of applying the composition of the present invention on a substrate.
It is preferable that the composition of the present invention is filtered by a filter as necessary before coating. The pore size of the filter is preferably 0.1 μm or less, more preferably 0.05 μm or less, and even more preferably 0.03 μm or less. The filter is preferably made of polytetrafluoroethylene, polyethylene, or nylon.
レジスト膜の膜厚は特に制限されないが、より高精度な微細パターンを形成できる点から、10~65nmが好ましく、15~50nmがより好ましい。
The film thickness of the resist film is not particularly limited, but 10 to 65 nm is preferable, and 15 to 50 nm is more preferable, from the viewpoint of being able to form a fine pattern with higher accuracy.
レジスト膜形成工程に関しては、国際公開第2018/193954号の段落[0227]~[0230]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
Regarding the resist film forming step, the description in paragraphs [0227] to [0230] of International Publication No. 2018/193954 can be taken into consideration, and these contents are incorporated in the present specification.
<工程2:露光工程>
工程2は、レジスト膜を(好ましくは、電子線(EB)、EUVで)露光する工程である。
露光の方法としては、例えば、形成したレジスト膜に所定のマスクを通して電子線(EB)又はEUVを照射する方法が挙げられる。 <Process 2: Exposure process>
Step 2 is a step of exposing the resist film (preferably with an electron beam (EB) or EUV).
Examples of the exposure method include a method of irradiating the formed resist film with an electron beam (EB) or EUV through a predetermined mask.
工程2は、レジスト膜を(好ましくは、電子線(EB)、EUVで)露光する工程である。
露光の方法としては、例えば、形成したレジスト膜に所定のマスクを通して電子線(EB)又はEUVを照射する方法が挙げられる。 <Process 2: Exposure process>
Step 2 is a step of exposing the resist film (preferably with an electron beam (EB) or EUV).
Examples of the exposure method include a method of irradiating the formed resist film with an electron beam (EB) or EUV through a predetermined mask.
露光後、現像を行う前にベーク(加熱)を行うことが好ましい。ベークにより露光部の反応が促進され、感度及びパターン形状がより良好となる。
加熱温度は80~150℃が好ましく、80~140℃がより好ましく、80~130℃が更に好ましい。
加熱時間は10~1000秒が好ましく、10~180秒がより好ましく、30~120秒が更に好ましい。
加熱は通常の露光機及び/又は現像機に備わっている手段で実施でき、ホットプレート等を用いて行ってもよい。
この工程は露光後ベークともいう。 It is preferable to bake (heat) after exposure and before developing. Baking accelerates the reaction of the exposed area, resulting in better sensitivity and pattern shape.
The heating temperature is preferably 80 to 150 ° C, more preferably 80 to 140 ° C, and even more preferably 80 to 130 ° C.
The heating time is preferably 10 to 1000 seconds, more preferably 10 to 180 seconds, and even more preferably 30 to 120 seconds.
The heating can be carried out by means provided in a normal exposure machine and / or a developing machine, and may be carried out by using a hot plate or the like.
This process is also called post-exposure baking.
加熱温度は80~150℃が好ましく、80~140℃がより好ましく、80~130℃が更に好ましい。
加熱時間は10~1000秒が好ましく、10~180秒がより好ましく、30~120秒が更に好ましい。
加熱は通常の露光機及び/又は現像機に備わっている手段で実施でき、ホットプレート等を用いて行ってもよい。
この工程は露光後ベークともいう。 It is preferable to bake (heat) after exposure and before developing. Baking accelerates the reaction of the exposed area, resulting in better sensitivity and pattern shape.
The heating temperature is preferably 80 to 150 ° C, more preferably 80 to 140 ° C, and even more preferably 80 to 130 ° C.
The heating time is preferably 10 to 1000 seconds, more preferably 10 to 180 seconds, and even more preferably 30 to 120 seconds.
The heating can be carried out by means provided in a normal exposure machine and / or a developing machine, and may be carried out by using a hot plate or the like.
This process is also called post-exposure baking.
<工程3:現像工程>
工程3は、現像液を用いて、露光されたレジスト膜を現像し、パターンを形成する工程である。
現像液は、アルカリ現像液であっても、有機溶剤を含有する現像液(以下、有機系現像液ともいう)であってもよい。 <Process 3: Development process>
Step 3 is a step of developing the exposed resist film using a developing solution to form a pattern.
The developer may be an alkaline developer or a developer containing an organic solvent (hereinafter, also referred to as an organic developer).
工程3は、現像液を用いて、露光されたレジスト膜を現像し、パターンを形成する工程である。
現像液は、アルカリ現像液であっても、有機溶剤を含有する現像液(以下、有機系現像液ともいう)であってもよい。 <Process 3: Development process>
Step 3 is a step of developing the exposed resist film using a developing solution to form a pattern.
The developer may be an alkaline developer or a developer containing an organic solvent (hereinafter, also referred to as an organic developer).
現像方法としては、例えば、現像液が満たされた槽中に基板を一定時間浸漬する方法(ディップ法)、基板表面に現像液を表面張力によって盛り上げて一定時間静止して現像する方法(パドル法)、基板表面に現像液を噴霧する方法(スプレー法)、及び、一定速度で回転している基板上に一定速度で現像液吐出ノズルをスキャンしながら現像液を吐出しつづける方法(ダイナミックディスペンス法)が挙げられる。
また、現像を行う工程の後に、他の溶剤に置換しながら、現像を停止する工程を実施してもよい。
現像時間は未露光部の樹脂が十分に溶解する時間であれば特に制限はなく、10~300秒が好ましく、20~120秒がより好ましい。
現像液の温度は0~50℃が好ましく、15~35℃がより好ましい。 Examples of the developing method include a method of immersing the substrate in a tank filled with a developing solution for a certain period of time (dip method), and a method of raising the developing solution on the surface of the substrate by surface tension and allowing it to stand still for a certain period of time (paddle method). ), A method of spraying the developer on the surface of the substrate (spray method), and a method of continuing to discharge the developer while scanning the developer discharge nozzle at a constant speed on the substrate rotating at a constant speed (dynamic discharge method). ).
Further, after the step of performing the development, a step of stopping the development may be carried out while substituting with another solvent.
The development time is not particularly limited as long as the resin in the unexposed portion is sufficiently dissolved, and is preferably 10 to 300 seconds, more preferably 20 to 120 seconds.
The temperature of the developing solution is preferably 0 to 50 ° C, more preferably 15 to 35 ° C.
また、現像を行う工程の後に、他の溶剤に置換しながら、現像を停止する工程を実施してもよい。
現像時間は未露光部の樹脂が十分に溶解する時間であれば特に制限はなく、10~300秒が好ましく、20~120秒がより好ましい。
現像液の温度は0~50℃が好ましく、15~35℃がより好ましい。 Examples of the developing method include a method of immersing the substrate in a tank filled with a developing solution for a certain period of time (dip method), and a method of raising the developing solution on the surface of the substrate by surface tension and allowing it to stand still for a certain period of time (paddle method). ), A method of spraying the developer on the surface of the substrate (spray method), and a method of continuing to discharge the developer while scanning the developer discharge nozzle at a constant speed on the substrate rotating at a constant speed (dynamic discharge method). ).
Further, after the step of performing the development, a step of stopping the development may be carried out while substituting with another solvent.
The development time is not particularly limited as long as the resin in the unexposed portion is sufficiently dissolved, and is preferably 10 to 300 seconds, more preferably 20 to 120 seconds.
The temperature of the developing solution is preferably 0 to 50 ° C, more preferably 15 to 35 ° C.
アルカリ現像液は、アルカリを含むアルカリ水溶液を用いることが好ましい。アルカリ現像液のアルカリ濃度は、通常、0.1~20質量%である。また、アルカリ現像液のpHは、通常、10.0~15.0である。
アルカリ現像液に関しては、特開2019-174549号公報の段落[0304]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 As the alkaline developer, it is preferable to use an alkaline aqueous solution containing an alkali. The alkali concentration of the alkaline developer is usually 0.1 to 20% by mass. The pH of the alkaline developer is usually 10.0 to 15.0.
Regarding the alkaline developer, the description in paragraph [0304] of JP-A-2019-174549 can be referred to, and these contents are incorporated in the present specification.
アルカリ現像液に関しては、特開2019-174549号公報の段落[0304]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。 As the alkaline developer, it is preferable to use an alkaline aqueous solution containing an alkali. The alkali concentration of the alkaline developer is usually 0.1 to 20% by mass. The pH of the alkaline developer is usually 10.0 to 15.0.
Regarding the alkaline developer, the description in paragraph [0304] of JP-A-2019-174549 can be referred to, and these contents are incorporated in the present specification.
有機系現像液は、ケトン系溶剤、エステル系溶剤、アルコール系溶剤、アミド系溶剤、エーテル系溶剤、及び炭化水素系溶剤からなる群より選択される少なくとも1種の有機溶剤を含有する現像液であることが好ましい。
The organic developer is a developer containing at least one organic solvent selected from the group consisting of a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent, an ether solvent, and a hydrocarbon solvent. It is preferable to have.
ケトン系溶剤に関しては、特開2019-174549号公報の段落[0306]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
Regarding the ketone solvent, the description in paragraph [0306] of JP-A-2019-174549 can be referred to, and these contents are incorporated in the present specification.
エステル系溶剤に関しては、特開2019-174549号公報の段落[0307]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
Regarding the ester solvent, the description in paragraph [0307] of JP-A-2019-174549 can be referred to, and these contents are incorporated in the present specification.
アルコール系溶剤、アミド系溶剤、エーテル系溶剤、及び、炭化水素系溶剤としては、例えば、米国特許出願公開2016/0070167A1号明細書の段落[0715]~[0718]に開示された溶剤を使用できる。
As the alcohol solvent, the amide solvent, the ether solvent, and the hydrocarbon solvent, for example, the solvents disclosed in paragraphs [0715] to [0718] of US Patent Application Publication No. 2016/0070167A1 can be used. ..
上記の溶剤は、複数混合してもよいし、上記以外の溶剤又は水と混合してもよい。現像液全体としての含水率は、50質量%未満が好ましく、20質量%未満がより好ましく、10質量%未満が更に好ましく、実質的に水分を含有しないのが特に好ましい。
有機系現像液に対する有機溶剤の含有量は、現像液の全量に対して、50質量%以上100質量%以下が好ましく、80質量%以上100質量%以下がより好ましく、90質量%以上100質量%以下が更に好ましく、95質量%以上100質量%以下が特に好ましい。 A plurality of the above solvents may be mixed, or may be mixed with a solvent other than the above or water. The water content of the developer as a whole is preferably less than 50% by mass, more preferably less than 20% by mass, further preferably less than 10% by mass, and particularly preferably substantially free of water.
The content of the organic solvent in the organic developer is preferably 50% by mass or more and 100% by mass or less, more preferably 80% by mass or more and 100% by mass or less, and 90% by mass or more and 100% by mass or less, based on the total amount of the developing solution. The following is more preferable, and 95% by mass or more and 100% by mass or less is particularly preferable.
有機系現像液に対する有機溶剤の含有量は、現像液の全量に対して、50質量%以上100質量%以下が好ましく、80質量%以上100質量%以下がより好ましく、90質量%以上100質量%以下が更に好ましく、95質量%以上100質量%以下が特に好ましい。 A plurality of the above solvents may be mixed, or may be mixed with a solvent other than the above or water. The water content of the developer as a whole is preferably less than 50% by mass, more preferably less than 20% by mass, further preferably less than 10% by mass, and particularly preferably substantially free of water.
The content of the organic solvent in the organic developer is preferably 50% by mass or more and 100% by mass or less, more preferably 80% by mass or more and 100% by mass or less, and 90% by mass or more and 100% by mass or less, based on the total amount of the developing solution. The following is more preferable, and 95% by mass or more and 100% by mass or less is particularly preferable.
<他の工程>
上記パターン形成方法は、工程3の後に、リンス液を用いて洗浄する工程(リンス工程)を含むことが好ましい。
リンス工程に関しては、特開2019-174549号公報の段落[0316]~[0320]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
また、本発明のパターン形成方法は、リンス工程の後に加熱工程(Post Bake)を含んでいてもよい。本工程により、ベークによりパターン間及びパターン内部に残留した現像液及びリンス液が除去される。また、本工程により、レジストパターンがなまされ、パターンの表面荒れが改善される効果もある。リンス工程の後の加熱工程は、通常40~250℃(好ましくは90~200℃)で、通常10秒間~3分間(好ましくは30秒間~120秒間)行う。 <Other processes>
The pattern forming method preferably includes a step of washing with a rinsing liquid (rinsing step) after the step 3.
Regarding the rinsing step, the descriptions in paragraphs [0316] to [0320] of JP-A-2019-174549 can be referred to, and these contents are incorporated in the present specification.
Further, the pattern forming method of the present invention may include a heating step (Post Bake) after the rinsing step. In this step, the developing solution and the rinsing solution remaining between the patterns and inside the patterns are removed by baking. In addition, this step has the effect of smoothing the resist pattern and improving the surface roughness of the pattern. The heating step after the rinsing step is usually performed at 40 to 250 ° C. (preferably 90 to 200 ° C.) for 10 seconds to 3 minutes (preferably 30 seconds to 120 seconds).
上記パターン形成方法は、工程3の後に、リンス液を用いて洗浄する工程(リンス工程)を含むことが好ましい。
リンス工程に関しては、特開2019-174549号公報の段落[0316]~[0320]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
また、本発明のパターン形成方法は、リンス工程の後に加熱工程(Post Bake)を含んでいてもよい。本工程により、ベークによりパターン間及びパターン内部に残留した現像液及びリンス液が除去される。また、本工程により、レジストパターンがなまされ、パターンの表面荒れが改善される効果もある。リンス工程の後の加熱工程は、通常40~250℃(好ましくは90~200℃)で、通常10秒間~3分間(好ましくは30秒間~120秒間)行う。 <Other processes>
The pattern forming method preferably includes a step of washing with a rinsing liquid (rinsing step) after the step 3.
Regarding the rinsing step, the descriptions in paragraphs [0316] to [0320] of JP-A-2019-174549 can be referred to, and these contents are incorporated in the present specification.
Further, the pattern forming method of the present invention may include a heating step (Post Bake) after the rinsing step. In this step, the developing solution and the rinsing solution remaining between the patterns and inside the patterns are removed by baking. In addition, this step has the effect of smoothing the resist pattern and improving the surface roughness of the pattern. The heating step after the rinsing step is usually performed at 40 to 250 ° C. (preferably 90 to 200 ° C.) for 10 seconds to 3 minutes (preferably 30 seconds to 120 seconds).
また、形成されたパターンをマスクとして、基板のエッチング処理を実施してもよい。つまり、工程3にて形成されたパターンをマスクとして、基板(または、下層膜及び基板)を加工して、基板にパターンを形成してもよい。この工程に関しては、国際公開第2018/193954号の段落[0238]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
Alternatively, the substrate may be etched using the formed pattern as a mask. That is, the pattern formed in step 3 may be used as a mask to process the substrate (or the underlayer film and the substrate) to form the pattern on the substrate. Regarding this process, the description in paragraph [0238] of International Publication No. 2018/193954 can be taken into consideration, and these contents are incorporated in the present specification.
本発明の組成物、及び、本発明のパターン形成方法において使用される各種材料(例えば、溶剤、現像液、リンス液、反射防止膜形成用組成物、トップコート形成用組成物等)は、金属等の不純物を含まないことが好ましい。これら材料に含まれる不純物の含有量は、1質量ppm以下が好ましく、10質量ppb以下がより好ましく、100質量ppt以下が更に好ましく、10質量ppt以下が特に好ましく、1質量ppt以下が最も好ましい。ここで、金属不純物としては、例えば、Na、K、Ca、Fe、Cu、Mg、Al、Li、Cr、Ni、Sn、Ag、As、Au、Ba、Cd、Co、Pb、Ti、V、W、及び、Zn等が挙げられる。
The composition of the present invention and various materials used in the pattern forming method of the present invention (for example, solvent, developing solution, rinsing solution, antireflection film forming composition, top coat forming composition, etc.) are made of metal. It is preferable that it does not contain impurities such as. The content of impurities contained in these materials is preferably 1 mass ppm or less, more preferably 10 mass ppt or less, further preferably 100 mass ppt or less, particularly preferably 10 mass ppt or less, and most preferably 1 mass ppt or less. Here, examples of the metal impurities include Na, K, Ca, Fe, Cu, Mg, Al, Li, Cr, Ni, Sn, Ag, As, Au, Ba, Cd, Co, Pb, Ti, V, etc. W, Zn and the like can be mentioned.
各種材料から金属等の不純物を除去する方法に関しては、国際公開第2018/193954号の段落[0240]~[0242]の記載を参酌でき、これらの内容は本願明細書に組み込まれる。
Regarding the method for removing impurities such as metals from various materials, the description in paragraphs [0240] to [0242] of International Publication No. 2018/193954 can be referred to, and these contents are incorporated in the present specification.
また、本発明では、国際公開第2018/193954号の段落[0243]~[0247]に記載された事項を援用することができ、これらの内容は本願明細書に組み込まれる。
Further, in the present invention, the matters described in paragraphs [0243] to [0247] of International Publication No. 2018/193954 can be incorporated, and these contents are incorporated in the present specification.
また、本発明は、上記したパターン形成方法を含む、電子デバイスの製造方法、及び、この製造方法により製造された電子デバイスにも関する。
本発明の電子デバイスは、電気電子機器(家電、OA(Office Automation)、メディア関連機器、光学用機器及び通信機器等)に、好適に、搭載されるものである。 The present invention also relates to a method for manufacturing an electronic device including the above-mentioned pattern forming method, and an electronic device manufactured by this manufacturing method.
The electronic device of the present invention is suitably mounted on an electric electronic device (home appliance, OA (Office Automation), media-related device, optical device, communication device, etc.).
本発明の電子デバイスは、電気電子機器(家電、OA(Office Automation)、メディア関連機器、光学用機器及び通信機器等)に、好適に、搭載されるものである。 The present invention also relates to a method for manufacturing an electronic device including the above-mentioned pattern forming method, and an electronic device manufactured by this manufacturing method.
The electronic device of the present invention is suitably mounted on an electric electronic device (home appliance, OA (Office Automation), media-related device, optical device, communication device, etc.).
以下に実施例に基づいて本発明をさらに詳細に説明する。以下の実施例に示す材料、使用量、割合、処理内容、及び処理手順等は、本発明の趣旨を逸脱しない限り適宜変更することができる。したがって、本発明の範囲は以下に示す実施例により限定的に解釈されるべきものではない。なお、特に断りのない限り、「部」及び「%」は質量基準を意図する。
The present invention will be described in more detail below based on examples. The materials, amounts used, ratios, treatment contents, treatment procedures, etc. shown in the following examples can be appropriately changed as long as they do not deviate from the gist of the present invention. Therefore, the scope of the present invention should not be construed as limiting by the examples shown below. Unless otherwise specified, "parts" and "%" are intended to be based on mass.
<モノマーa1の合成>
<Synthesis of monomer a1>
グリセロール1,2-カルボナート18gと塩化メチレン108gを混合し、-10℃で撹拌しながらN-メチルモルホリン(NMM)15.9gを加え、さらにトリフルオロメタンスルホン酸無水物(Tf2O)43.8gと塩化メチレン42gの混合溶液を、過度に発熱しないよう注意深く滴下し、0℃で2時間撹拌した。反応液を20℃に戻した後でアセトン300gを加え、減圧濃縮し、中間体Aのアセトン溶液120gを得た。4-ヒドロキシスチレン15.3gとアセトン126gを混合し、氷冷下、炭酸セシウム99gを加え、さらに上記中間体Aのアセトン溶液120gを滴下した。20℃でさらに2時間撹拌した後、ろ過した。ろ液を減圧濃縮して溶媒を留去した後、2-プロパノールで再結晶を行い、30gのモノマーa1を得た(収率62%)。
1H-NMR(Acetone-d6:ppm)δ:7.43(d)、6.98(d)、6.70(dd)、5.68(d)、5.23(m)、5.12(d)、4.73(dd)、4.54(dd)、4.42-4.26(dddd) 18 g of glycerol 1,2-carbonate and 108 g of methylene chloride are mixed, 15.9 g of N-methylmorpholine (NMM) is added with stirring at -10 ° C, and 43.8 g of trifluoromethanesulfonic anhydride (Tf 2 O) is added. A mixed solution of 42 g of methylene chloride and 42 g of methylene chloride was carefully added dropwise so as not to generate excessive heat, and the mixture was stirred at 0 ° C. for 2 hours. After returning the reaction solution to 20 ° C., 300 g of acetone was added and concentrated under reduced pressure to obtain 120 g of an acetone solution of Intermediate A. 15.3 g of 4-hydroxystyrene and 126 g of acetone were mixed, 99 g of cesium carbonate was added under ice-cooling, and 120 g of an acetone solution of the above intermediate A was added dropwise. After stirring at 20 ° C. for another 2 hours, the mixture was filtered. The filtrate was concentrated under reduced pressure to distill off the solvent, and then recrystallized from 2-propanol to obtain 30 g of monomer a1 (yield 62%).
1 1 H-NMR (Acetone-d6: ppm) δ: 7.43 (d), 6.98 (d), 6.70 (dd), 5.68 (d), 5.23 (m), 5. 12 (d), 4.73 (dd), 4.54 (dd), 4.42-4.26 (dddd)
1H-NMR(Acetone-d6:ppm)δ:7.43(d)、6.98(d)、6.70(dd)、5.68(d)、5.23(m)、5.12(d)、4.73(dd)、4.54(dd)、4.42-4.26(dddd) 18 g of glycerol 1,2-carbonate and 108 g of methylene chloride are mixed, 15.9 g of N-methylmorpholine (NMM) is added with stirring at -10 ° C, and 43.8 g of trifluoromethanesulfonic anhydride (Tf 2 O) is added. A mixed solution of 42 g of methylene chloride and 42 g of methylene chloride was carefully added dropwise so as not to generate excessive heat, and the mixture was stirred at 0 ° C. for 2 hours. After returning the reaction solution to 20 ° C., 300 g of acetone was added and concentrated under reduced pressure to obtain 120 g of an acetone solution of Intermediate A. 15.3 g of 4-hydroxystyrene and 126 g of acetone were mixed, 99 g of cesium carbonate was added under ice-cooling, and 120 g of an acetone solution of the above intermediate A was added dropwise. After stirring at 20 ° C. for another 2 hours, the mixture was filtered. The filtrate was concentrated under reduced pressure to distill off the solvent, and then recrystallized from 2-propanol to obtain 30 g of monomer a1 (yield 62%).
1 1 H-NMR (Acetone-d6: ppm) δ: 7.43 (d), 6.98 (d), 6.70 (dd), 5.68 (d), 5.23 (m), 5. 12 (d), 4.73 (dd), 4.54 (dd), 4.42-4.26 (dddd)
<モノマーa14の合成>
<Synthesis of monomer a14>
4-ビニル安息香酸25.2g、グリセロール1,2-カルボナート20g、4-ジメチルアミノピリジン2.1gとテトラヒドロフラン(THF)315gを混合し、氷冷下、1-エチル-3-(3-ジメチルアミノプロピル)カルボジイミド塩酸塩(EDC)36gを加え、20℃で6時間撹拌した。ろ過して不溶物を除去した後、ろ液を減圧濃縮した。残留物に酢酸エチル560gと水500gを加えて分液操作を行い、有機層を水500gで3回洗浄した。硫酸ナトリウムで脱水した後ろ過し、ろ液を減圧濃縮した。残留物を酢酸エチル75gに溶解し氷冷下撹拌しながら、n-ヘキサン120gを滴下すると白色結晶が析出した。これをろ過して、29gのモノマーa14を得た(収率69%)。
1H-NMR(Acetone-d6:ppm)δ:8.00(d)、10.22(s)、7.63(d)、7.86(d)、6.85(dd)、6.01(d)、5.43(d)、5.28(m)、4.77(dd)、4.69-4.54(m) 25.2 g of 4-vinylbenzoic acid, 20 g of glycerol 1,2-carbonate, 2.1 g of 4-dimethylaminopyridine and 315 g of tetrahydrofuran (THF) are mixed, and 1-ethyl-3- (3-dimethylamino) is cooled under ice. 36 g of propyl) carbodiimide hydrochloride (EDC) was added, and the mixture was stirred at 20 ° C. for 6 hours. After removing the insoluble matter by filtration, the filtrate was concentrated under reduced pressure. 560 g of ethyl acetate and 500 g of water were added to the residue to carry out a liquid separation operation, and the organic layer was washed 3 times with 500 g of water. After dehydration with sodium sulfate, the mixture was filtered, and the filtrate was concentrated under reduced pressure. The residue was dissolved in 75 g of ethyl acetate, and 120 g of n-hexane was added dropwise while stirring under ice-cooling to precipitate white crystals. This was filtered to obtain 29 g of monomer a14 (yield 69%).
1 1 H-NMR (Acetone-d6: ppm) δ: 8.00 (d), 10.22 (s), 7.63 (d), 7.86 (d), 6.85 (dd), 6. 01 (d), 5.43 (d), 5.28 (m), 4.77 (dd), 4.69-4.54 (m)
1H-NMR(Acetone-d6:ppm)δ:8.00(d)、10.22(s)、7.63(d)、7.86(d)、6.85(dd)、6.01(d)、5.43(d)、5.28(m)、4.77(dd)、4.69-4.54(m) 25.2 g of 4-vinylbenzoic acid, 20 g of glycerol 1,2-carbonate, 2.1 g of 4-dimethylaminopyridine and 315 g of tetrahydrofuran (THF) are mixed, and 1-ethyl-3- (3-dimethylamino) is cooled under ice. 36 g of propyl) carbodiimide hydrochloride (EDC) was added, and the mixture was stirred at 20 ° C. for 6 hours. After removing the insoluble matter by filtration, the filtrate was concentrated under reduced pressure. 560 g of ethyl acetate and 500 g of water were added to the residue to carry out a liquid separation operation, and the organic layer was washed 3 times with 500 g of water. After dehydration with sodium sulfate, the mixture was filtered, and the filtrate was concentrated under reduced pressure. The residue was dissolved in 75 g of ethyl acetate, and 120 g of n-hexane was added dropwise while stirring under ice-cooling to precipitate white crystals. This was filtered to obtain 29 g of monomer a14 (yield 69%).
1 1 H-NMR (Acetone-d6: ppm) δ: 8.00 (d), 10.22 (s), 7.63 (d), 7.86 (d), 6.85 (dd), 6. 01 (d), 5.43 (d), 5.28 (m), 4.77 (dd), 4.69-4.54 (m)
<合成例1:樹脂A-1の合成>
14gのモノマー(a1)と、42gのモノマー(b1)と、14gのモノマー(c4)と、4.3gの重合開始剤V-601(和光純薬工業(株)製)とを、155gのシクロヘキサノンに溶解させた。反応容器中に41gのプロピレングリコールモノメチルエーテルアセテート(PGMEA)を入れ、窒素ガス雰囲気下、85℃の系中に4時間かけて滴下した。反応溶液を2時間に亘って加熱撹拌した後、これを20℃まで放冷した。上記反応溶液に70gのPGMEAを加えた後、2450gの酢酸エチルとn-ヘプタンの混合溶媒(酢酸エチル/n-ヘプタン=10/90(質量比))に滴下しポリマーを沈殿させ、上澄みの溶媒を除去した。残ったポリマーに1050gの酢酸エチルとn-ヘプタンの混合溶媒(上記と同様の質量比)を加え、30分間撹拌した後にろ過した。得られた粉体を減圧乾燥に供して、51gの樹脂(A-1)を得た。GPCによる重量平均分子量は9000、分散度(Mw/Mn)は1.77であった。13C-NMR測定により算出した樹脂A-1の組成比は質量比で20/60/20(a1/b1/c4)であった。 <Synthesis Example 1: Synthesis of Resin A-1>
14 g of monomer (a1), 42 g of monomer (b1), 14 g of monomer (c4), 4.3 g of polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.), and 155 g of cyclohexanone. Was dissolved in. 41 g of propylene glycol monomethyl ether acetate (PGMEA) was placed in a reaction vessel, and the mixture was added dropwise to a system at 85 ° C. over 4 hours under a nitrogen gas atmosphere. The reaction solution was heated and stirred for 2 hours and then allowed to cool to 20 ° C. After adding 70 g of PGMEA to the above reaction solution, the mixture was added dropwise to 2450 g of a mixed solvent of ethyl acetate and n-heptane (ethyl acetate / n-heptane = 10/90 (mass ratio)) to precipitate the polymer, and the supernatant solvent was added. Was removed. To the remaining polymer, 1050 g of a mixed solvent of ethyl acetate and n-heptane (mass ratio similar to the above) was added, and the mixture was stirred for 30 minutes and then filtered. The obtained powder was dried under reduced pressure to obtain 51 g of a resin (A-1). The weight average molecular weight by GPC was 9000, and the dispersity (Mw / Mn) was 1.77. 13 The composition ratio of the resin A-1 calculated by C-NMR measurement was 20/60/20 (a1 / b1 / c4) in terms of mass ratio.
14gのモノマー(a1)と、42gのモノマー(b1)と、14gのモノマー(c4)と、4.3gの重合開始剤V-601(和光純薬工業(株)製)とを、155gのシクロヘキサノンに溶解させた。反応容器中に41gのプロピレングリコールモノメチルエーテルアセテート(PGMEA)を入れ、窒素ガス雰囲気下、85℃の系中に4時間かけて滴下した。反応溶液を2時間に亘って加熱撹拌した後、これを20℃まで放冷した。上記反応溶液に70gのPGMEAを加えた後、2450gの酢酸エチルとn-ヘプタンの混合溶媒(酢酸エチル/n-ヘプタン=10/90(質量比))に滴下しポリマーを沈殿させ、上澄みの溶媒を除去した。残ったポリマーに1050gの酢酸エチルとn-ヘプタンの混合溶媒(上記と同様の質量比)を加え、30分間撹拌した後にろ過した。得られた粉体を減圧乾燥に供して、51gの樹脂(A-1)を得た。GPCによる重量平均分子量は9000、分散度(Mw/Mn)は1.77であった。13C-NMR測定により算出した樹脂A-1の組成比は質量比で20/60/20(a1/b1/c4)であった。 <Synthesis Example 1: Synthesis of Resin A-1>
14 g of monomer (a1), 42 g of monomer (b1), 14 g of monomer (c4), 4.3 g of polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.), and 155 g of cyclohexanone. Was dissolved in. 41 g of propylene glycol monomethyl ether acetate (PGMEA) was placed in a reaction vessel, and the mixture was added dropwise to a system at 85 ° C. over 4 hours under a nitrogen gas atmosphere. The reaction solution was heated and stirred for 2 hours and then allowed to cool to 20 ° C. After adding 70 g of PGMEA to the above reaction solution, the mixture was added dropwise to 2450 g of a mixed solvent of ethyl acetate and n-heptane (ethyl acetate / n-heptane = 10/90 (mass ratio)) to precipitate the polymer, and the supernatant solvent was added. Was removed. To the remaining polymer, 1050 g of a mixed solvent of ethyl acetate and n-heptane (mass ratio similar to the above) was added, and the mixture was stirred for 30 minutes and then filtered. The obtained powder was dried under reduced pressure to obtain 51 g of a resin (A-1). The weight average molecular weight by GPC was 9000, and the dispersity (Mw / Mn) was 1.77. 13 The composition ratio of the resin A-1 calculated by C-NMR measurement was 20/60/20 (a1 / b1 / c4) in terms of mass ratio.
1H-NMR(DMSO-d6:ppm)δ:9.06、7.07-6.22、5.13、4.63、4.47-3.99、2.15-0.12
1 1 H-NMR (DMSO-d6: ppm) δ: 9.06, 7.07-6.22, 5.13, 4.63, 4.47-3.99, 2.15-0.12.
<合成例2:樹脂A-21の合成>
14gのモノマー(a14)と、42gのモノマー(b1)と、14gのモノマー(c4)と、5.1gの重合開始剤V-601(和光純薬工業(株)製)とを、155gのシクロヘキサノンに溶解させた。反応容器中に41gのPGMEAを入れ、窒素ガス雰囲気下、85℃の系中に4時間かけて滴下した。反応溶液を2時間に亘って加熱撹拌した後、これを20℃まで放冷した。上記反応溶液に70gのPGMEAを加えた後、2450gの酢酸エチルとn-ヘプタンの混合溶媒(酢酸エチル/n-ヘプタン=10/90(質量比))に滴下しポリマーを沈殿させ、上澄みの溶媒を除去した。残ったポリマーに1050gの酢酸エチルとn-ヘプタンの混合溶媒(上記と同様の質量比)を加え、30分間撹拌した後にろ過した。得られた粉体を減圧乾燥に供して、55gの樹脂(A-21)を得た。GPCによる重量平均分子量は9000、分散度(Mw/Mn)は1.67であった。13C-NMR測定により算出した樹脂A-21の組成比は質量比で20/60/20(a14/b1/c4)であった。 <Synthesis Example 2: Synthesis of Resin A-21>
14 g of monomer (a14), 42 g of monomer (b1), 14 g of monomer (c4), 5.1 g of polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.), and 155 g of cyclohexanone. Was dissolved in. 41 g of PGMEA was placed in a reaction vessel, and the mixture was added dropwise to a system at 85 ° C. over 4 hours under a nitrogen gas atmosphere. The reaction solution was heated and stirred for 2 hours and then allowed to cool to 20 ° C. After adding 70 g of PGMEA to the above reaction solution, the mixture was added dropwise to 2450 g of a mixed solvent of ethyl acetate and n-heptane (ethyl acetate / n-heptane = 10/90 (mass ratio)) to precipitate the polymer, and the supernatant solvent was added. Was removed. To the remaining polymer, 1050 g of a mixed solvent of ethyl acetate and n-heptane (mass ratio similar to the above) was added, and the mixture was stirred for 30 minutes and then filtered. The obtained powder was dried under reduced pressure to obtain 55 g of a resin (A-21). The weight average molecular weight by GPC was 9000, and the dispersity (Mw / Mn) was 1.67. 13 The composition ratio of the resin A-21 calculated by C-NMR measurement was 20/60/20 (a14 / b1 / c4) in terms of mass ratio.
14gのモノマー(a14)と、42gのモノマー(b1)と、14gのモノマー(c4)と、5.1gの重合開始剤V-601(和光純薬工業(株)製)とを、155gのシクロヘキサノンに溶解させた。反応容器中に41gのPGMEAを入れ、窒素ガス雰囲気下、85℃の系中に4時間かけて滴下した。反応溶液を2時間に亘って加熱撹拌した後、これを20℃まで放冷した。上記反応溶液に70gのPGMEAを加えた後、2450gの酢酸エチルとn-ヘプタンの混合溶媒(酢酸エチル/n-ヘプタン=10/90(質量比))に滴下しポリマーを沈殿させ、上澄みの溶媒を除去した。残ったポリマーに1050gの酢酸エチルとn-ヘプタンの混合溶媒(上記と同様の質量比)を加え、30分間撹拌した後にろ過した。得られた粉体を減圧乾燥に供して、55gの樹脂(A-21)を得た。GPCによる重量平均分子量は9000、分散度(Mw/Mn)は1.67であった。13C-NMR測定により算出した樹脂A-21の組成比は質量比で20/60/20(a14/b1/c4)であった。 <Synthesis Example 2: Synthesis of Resin A-21>
14 g of monomer (a14), 42 g of monomer (b1), 14 g of monomer (c4), 5.1 g of polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.), and 155 g of cyclohexanone. Was dissolved in. 41 g of PGMEA was placed in a reaction vessel, and the mixture was added dropwise to a system at 85 ° C. over 4 hours under a nitrogen gas atmosphere. The reaction solution was heated and stirred for 2 hours and then allowed to cool to 20 ° C. After adding 70 g of PGMEA to the above reaction solution, the mixture was added dropwise to 2450 g of a mixed solvent of ethyl acetate and n-heptane (ethyl acetate / n-heptane = 10/90 (mass ratio)) to precipitate the polymer, and the supernatant solvent was added. Was removed. To the remaining polymer, 1050 g of a mixed solvent of ethyl acetate and n-heptane (mass ratio similar to the above) was added, and the mixture was stirred for 30 minutes and then filtered. The obtained powder was dried under reduced pressure to obtain 55 g of a resin (A-21). The weight average molecular weight by GPC was 9000, and the dispersity (Mw / Mn) was 1.67. 13 The composition ratio of the resin A-21 calculated by C-NMR measurement was 20/60/20 (a14 / b1 / c4) in terms of mass ratio.
1H-NMR(DMSO-d6:ppm)δ:9.08、7.80、7.40-6.32、5.18、4.78-4.22、2.12-0.22
1 1 H-NMR (DMSO-d6: ppm) δ: 9.08, 7.80, 7.40-6.32, 5.18, 4.78-4.22, 2.12-0.22
用いるモノマーを変更した以外は、上記樹脂A-1の合成例と同様の方法で、表1~3に示す樹脂(A)を合成した。
樹脂の組成比は、1H-NMR(nuclear magnetic resonance)又は13C-NMR測定により算出した。樹脂の重量平均分子量(Mw:ポリスチレン換算)、及び分散度(Mw/Mn)はGPC(溶媒:THF)測定により算出した。なお、表1~3には、各樹脂について、各繰り返し単位の含有量(樹脂(A)の全繰り返し単位に対する各繰り返し単位の質量比率(単位:質量%))、Mw(重量平均分子量)、及び分散度を示した。
樹脂(RA-1)~(RA-8)は本発明の樹脂(A)ではないが、便宜上表3に記載した。
表1~3において、各繰り返し単位の含有量は各繰り返し単位の「種類」の欄の右の「含有量(質量%)」の欄に記載した。 The resin (A) shown in Tables 1 to 3 was synthesized by the same method as in the synthesis example of the resin A-1 except that the monomer used was changed.
The composition ratio of the resin was calculated by 1 H-NMR (nuclear magnetic resonance) or 13 C-NMR measurement. The weight average molecular weight (Mw: polystyrene conversion) and the dispersity (Mw / Mn) of the resin were calculated by GPC (solvent: THF) measurement. In Tables 1 to 3, for each resin, the content of each repeating unit (mass ratio of each repeating unit to all repeating units of the resin (A) (unit: mass%)), Mw (weight average molecular weight), and Mw (weight average molecular weight). And the degree of dispersion are shown.
Although the resins (RA-1) to (RA-8) are not the resins (A) of the present invention, they are listed in Table 3 for convenience.
In Tables 1 to 3, the content of each repeating unit is described in the "content (% by mass)" column to the right of the "type" column of each repeating unit.
樹脂の組成比は、1H-NMR(nuclear magnetic resonance)又は13C-NMR測定により算出した。樹脂の重量平均分子量(Mw:ポリスチレン換算)、及び分散度(Mw/Mn)はGPC(溶媒:THF)測定により算出した。なお、表1~3には、各樹脂について、各繰り返し単位の含有量(樹脂(A)の全繰り返し単位に対する各繰り返し単位の質量比率(単位:質量%))、Mw(重量平均分子量)、及び分散度を示した。
樹脂(RA-1)~(RA-8)は本発明の樹脂(A)ではないが、便宜上表3に記載した。
表1~3において、各繰り返し単位の含有量は各繰り返し単位の「種類」の欄の右の「含有量(質量%)」の欄に記載した。 The resin (A) shown in Tables 1 to 3 was synthesized by the same method as in the synthesis example of the resin A-1 except that the monomer used was changed.
The composition ratio of the resin was calculated by 1 H-NMR (nuclear magnetic resonance) or 13 C-NMR measurement. The weight average molecular weight (Mw: polystyrene conversion) and the dispersity (Mw / Mn) of the resin were calculated by GPC (solvent: THF) measurement. In Tables 1 to 3, for each resin, the content of each repeating unit (mass ratio of each repeating unit to all repeating units of the resin (A) (unit: mass%)), Mw (weight average molecular weight), and Mw (weight average molecular weight). And the degree of dispersion are shown.
Although the resins (RA-1) to (RA-8) are not the resins (A) of the present invention, they are listed in Table 3 for convenience.
In Tables 1 to 3, the content of each repeating unit is described in the "content (% by mass)" column to the right of the "type" column of each repeating unit.
以下に各繰り返し単位の構造を示す。
The structure of each repeating unit is shown below.
〔光酸発生剤B〕
使用した光酸発生剤を以下に示す。 [Photoacid generator B]
The photoacid generator used is shown below.
使用した光酸発生剤を以下に示す。 [Photoacid generator B]
The photoacid generator used is shown below.
〔酸拡散制御剤D〕
使用した酸拡散制御剤を以下に示す。 [Acid diffusion control agent D]
The acid diffusion control agent used is shown below.
使用した酸拡散制御剤を以下に示す。 [Acid diffusion control agent D]
The acid diffusion control agent used is shown below.
〔疎水性樹脂E〕
使用した疎水性樹脂を以下に示す。 [Hydrophobic resin E]
The hydrophobic resin used is shown below.
使用した疎水性樹脂を以下に示す。 [Hydrophobic resin E]
The hydrophobic resin used is shown below.
E-1~E-4の重量平均分子量(Mw)及び分散度(Mw/Mn)はGPC(キャリア:テトラヒドロフラン(THF))により測定した(ポリスチレン換算量である)。また、樹脂の組成比(モル比)は、13C-NMRにより測定した。
The weight average molecular weight (Mw) and dispersity (Mw / Mn) of E-1 to E-4 were measured by GPC (carrier: tetrahydrofuran (THF)) (in terms of polystyrene). The composition ratio (molar ratio) of the resin was measured by 13 C-NMR.
〔界面活性剤〕
以下に示す界面活性剤を使用した。
H-1:メガファックF176(DIC(株)製、フッ素系界面活性剤)
H-2:メガファックR08(DIC(株)製、フッ素及びシリコン系界面活性剤) [Surfactant]
The surfactants shown below were used.
H-1: Megafuck F176 (manufactured by DIC Corporation, fluorine-based surfactant)
H-2: Megafuck R08 (manufactured by DIC Corporation, fluorine and silicon-based surfactant)
以下に示す界面活性剤を使用した。
H-1:メガファックF176(DIC(株)製、フッ素系界面活性剤)
H-2:メガファックR08(DIC(株)製、フッ素及びシリコン系界面活性剤) [Surfactant]
The surfactants shown below were used.
H-1: Megafuck F176 (manufactured by DIC Corporation, fluorine-based surfactant)
H-2: Megafuck R08 (manufactured by DIC Corporation, fluorine and silicon-based surfactant)
〔溶剤〕
以下に示す溶剤を使用した。
F1:プロピレングリコールモノメチルエーテルアセテート(PGMEA)
F2:プロピレングリコールモノメチルエーテル(PGME)
F3:プロピレングリコールモノエチルエーテル(PGEE)
F4:シクロヘキサノン
F5:シクロペンタノン
F6:2-ヘプタノン
F7:乳酸エチル
F8:γ-ブチロラクトン
F9:プロピレンカーボネート 〔solvent〕
The following solvents were used.
F1: Propylene glycol monomethyl ether acetate (PGMEA)
F2: Propylene glycol monomethyl ether (PGME)
F3: Propylene glycol monoethyl ether (PGEE)
F4: Cyclohexanone F5: Cyclopentanone F6: 2-Heptanone F7: Ethyl lactate F8: γ-Butyrolactone F9: Propylene carbonate
以下に示す溶剤を使用した。
F1:プロピレングリコールモノメチルエーテルアセテート(PGMEA)
F2:プロピレングリコールモノメチルエーテル(PGME)
F3:プロピレングリコールモノエチルエーテル(PGEE)
F4:シクロヘキサノン
F5:シクロペンタノン
F6:2-ヘプタノン
F7:乳酸エチル
F8:γ-ブチロラクトン
F9:プロピレンカーボネート 〔solvent〕
The following solvents were used.
F1: Propylene glycol monomethyl ether acetate (PGMEA)
F2: Propylene glycol monomethyl ether (PGME)
F3: Propylene glycol monoethyl ether (PGEE)
F4: Cyclohexanone F5: Cyclopentanone F6: 2-Heptanone F7: Ethyl lactate F8: γ-Butyrolactone F9: Propylene carbonate
〔感活性光線性又は感放射線性樹脂組成物の調製〕
表4~6に示す各成分を固形分濃度が2.0質量%となるように混合した。次いで、得られた混合液を、最初に孔径50nmのポリエチレン製フィルター、次に孔径10nmのナイロン製フィルター、最後に孔径5nmのポリエチレン製フィルターの順番で濾過することにより、感活性光線性又は感放射線性樹脂組成物(以下、樹脂組成物ともいう)を調製した。なお、樹脂組成物において、固形分とは溶剤以外の全ての成分を意味する。得られた樹脂組成物を実施例及び比較例で使用した。
以下の「樹脂(A)」欄、「光酸発生剤(B)」欄、「酸拡散制御剤(D)」欄、「疎水性樹脂(E)」欄、及び「界面活性剤」欄に記載の各成分の添加量は全固形分に対する各成分の割合(質量%)を表す。各成分の添加量は各成分の「種類」の欄の右の「添加量(%)」の欄に記載した。 [Preparation of Actinic Cheilitis or Radiation Sensitive Resin Composition]
Each component shown in Tables 4 to 6 was mixed so that the solid content concentration was 2.0% by mass. Then, the obtained mixed solution is first filtered through a polyethylene filter having a pore size of 50 nm, then a nylon filter having a pore diameter of 10 nm, and finally a polyethylene filter having a pore diameter of 5 nm, thereby causing sensitive light or radiation. A sex resin composition (hereinafter, also referred to as a resin composition) was prepared. In the resin composition, the solid content means all components other than the solvent. The obtained resin composition was used in Examples and Comparative Examples.
In the following "resin (A)" column, "photoacid generator (B)" column, "acid diffusion control agent (D)" column, "hydrophobic resin (E)" column, and "surfactant" column The addition amount of each component described represents the ratio (mass%) of each component to the total solid content. The addition amount of each component is described in the "addition amount (%)" column on the right side of the "type" column of each component.
表4~6に示す各成分を固形分濃度が2.0質量%となるように混合した。次いで、得られた混合液を、最初に孔径50nmのポリエチレン製フィルター、次に孔径10nmのナイロン製フィルター、最後に孔径5nmのポリエチレン製フィルターの順番で濾過することにより、感活性光線性又は感放射線性樹脂組成物(以下、樹脂組成物ともいう)を調製した。なお、樹脂組成物において、固形分とは溶剤以外の全ての成分を意味する。得られた樹脂組成物を実施例及び比較例で使用した。
以下の「樹脂(A)」欄、「光酸発生剤(B)」欄、「酸拡散制御剤(D)」欄、「疎水性樹脂(E)」欄、及び「界面活性剤」欄に記載の各成分の添加量は全固形分に対する各成分の割合(質量%)を表す。各成分の添加量は各成分の「種類」の欄の右の「添加量(%)」の欄に記載した。 [Preparation of Actinic Cheilitis or Radiation Sensitive Resin Composition]
Each component shown in Tables 4 to 6 was mixed so that the solid content concentration was 2.0% by mass. Then, the obtained mixed solution is first filtered through a polyethylene filter having a pore size of 50 nm, then a nylon filter having a pore diameter of 10 nm, and finally a polyethylene filter having a pore diameter of 5 nm, thereby causing sensitive light or radiation. A sex resin composition (hereinafter, also referred to as a resin composition) was prepared. In the resin composition, the solid content means all components other than the solvent. The obtained resin composition was used in Examples and Comparative Examples.
In the following "resin (A)" column, "photoacid generator (B)" column, "acid diffusion control agent (D)" column, "hydrophobic resin (E)" column, and "surfactant" column The addition amount of each component described represents the ratio (mass%) of each component to the total solid content. The addition amount of each component is described in the "addition amount (%)" column on the right side of the "type" column of each component.
〔パターン形成(1):EUV露光、有機溶剤現像〕
シリコンウエハ上に下層膜形成用組成物AL412(Brewer Science社製)を塗布し、205℃で60秒間ベークして、膜厚20nmの下地膜を形成した。その上に、表7に示す樹脂組成物を塗布し、100℃で60秒間ベークして、膜厚30nmのレジスト膜を形成した。
EUV露光装置(Exitech社製、Micro Exposure Tool、NA0.3、Quadrupol、アウターシグマ0.68、インナーシグマ0.36)を用いて、得られたレジスト膜を有するシリコンウエハに対してパターン照射を行った。なお、レクチルとしては、ラインサイズ=20nmであり、且つ、ライン:スペース=1:1であるマスクを用いた。
露光後のレジスト膜を90℃で60秒間ベークした後、酢酸n-ブチルで30秒間現像し、これをスピン乾燥してネガ型のパターンを得た。 [Pattern formation (1): EUV exposure, organic solvent development]
The underlayer film forming composition AL412 (manufactured by Brewer Science) was applied onto a silicon wafer and baked at 205 ° C. for 60 seconds to form a base film having a film thickness of 20 nm. The resin composition shown in Table 7 was applied thereto and baked at 100 ° C. for 60 seconds to form a resist film having a film thickness of 30 nm.
Using an EUV exposure apparatus (Micro Exposure Tool, NA0.3, Quadrupole, outer sigma 0.68, inner sigma 0.36, manufactured by Exitech), pattern irradiation was performed on the silicon wafer having the obtained resist film. rice field. As the lectil, a mask having a line size of 20 nm and a line: space = 1: 1 was used.
The resist film after exposure was baked at 90 ° C. for 60 seconds, developed with n-butyl acetate for 30 seconds, and spin-dried to obtain a negative pattern.
シリコンウエハ上に下層膜形成用組成物AL412(Brewer Science社製)を塗布し、205℃で60秒間ベークして、膜厚20nmの下地膜を形成した。その上に、表7に示す樹脂組成物を塗布し、100℃で60秒間ベークして、膜厚30nmのレジスト膜を形成した。
EUV露光装置(Exitech社製、Micro Exposure Tool、NA0.3、Quadrupol、アウターシグマ0.68、インナーシグマ0.36)を用いて、得られたレジスト膜を有するシリコンウエハに対してパターン照射を行った。なお、レクチルとしては、ラインサイズ=20nmであり、且つ、ライン:スペース=1:1であるマスクを用いた。
露光後のレジスト膜を90℃で60秒間ベークした後、酢酸n-ブチルで30秒間現像し、これをスピン乾燥してネガ型のパターンを得た。 [Pattern formation (1): EUV exposure, organic solvent development]
The underlayer film forming composition AL412 (manufactured by Brewer Science) was applied onto a silicon wafer and baked at 205 ° C. for 60 seconds to form a base film having a film thickness of 20 nm. The resin composition shown in Table 7 was applied thereto and baked at 100 ° C. for 60 seconds to form a resist film having a film thickness of 30 nm.
Using an EUV exposure apparatus (Micro Exposure Tool, NA0.3, Quadrupole, outer sigma 0.68, inner sigma 0.36, manufactured by Exitech), pattern irradiation was performed on the silicon wafer having the obtained resist film. rice field. As the lectil, a mask having a line size of 20 nm and a line: space = 1: 1 was used.
The resist film after exposure was baked at 90 ° C. for 60 seconds, developed with n-butyl acetate for 30 seconds, and spin-dried to obtain a negative pattern.
〔評価〕
[ラフネス性能](LWR(line width roughness)性能)
ライン幅が平均20nmのラインパターンを解像する時の最適露光量にて解像した20nm(1:1)のラインアンドスペースのパターンに対して、測長走査型電子顕微鏡(SEM((株)日立製作所S-9380II))を使用してパターン上部から観察する際、線幅を50箇所で観測し、その測定ばらつきを3σで評価し、LWR(nm)とした。値が小さいほど良好な性能であることを示す。 〔evaluation〕
[Roughness performance] (LWR (line width noise) performance)
A length-measuring scanning electron microscope (SEM Co., Ltd.) was used for a 20 nm (1: 1) line-and-space pattern resolved at the optimum exposure amount when resolving a line pattern with an average line width of 20 nm. When observing from the upper part of the pattern using Hitachi, Ltd. S-9380II)), the line width was observed at 50 points, and the measurement variation was evaluated by 3σ and used as LWR (nm). The smaller the value, the better the performance.
[ラフネス性能](LWR(line width roughness)性能)
ライン幅が平均20nmのラインパターンを解像する時の最適露光量にて解像した20nm(1:1)のラインアンドスペースのパターンに対して、測長走査型電子顕微鏡(SEM((株)日立製作所S-9380II))を使用してパターン上部から観察する際、線幅を50箇所で観測し、その測定ばらつきを3σで評価し、LWR(nm)とした。値が小さいほど良好な性能であることを示す。 〔evaluation〕
[Roughness performance] (LWR (line width noise) performance)
A length-measuring scanning electron microscope (SEM Co., Ltd.) was used for a 20 nm (1: 1) line-and-space pattern resolved at the optimum exposure amount when resolving a line pattern with an average line width of 20 nm. When observing from the upper part of the pattern using Hitachi, Ltd. S-9380II)), the line width was observed at 50 points, and the measurement variation was evaluated by 3σ and used as LWR (nm). The smaller the value, the better the performance.
[倒れ前線幅]
露光量を変化させながら、ラインアンドスペースパターンのライン幅を測定した。この際、10μm四方にわたりパターンが倒れることなく解像している最小のライン幅の平均値を、倒れ前線幅とした。この値が小さいほど、パターン倒れのマージンが広く、性能良好であることを示す。 [Fall front width]
The line width of the line-and-space pattern was measured while changing the exposure amount. At this time, the average value of the minimum line widths at which the pattern was resolved without collapsing over 10 μm square was defined as the collapse front width. The smaller this value is, the wider the margin of pattern collapse is, and the better the performance is.
露光量を変化させながら、ラインアンドスペースパターンのライン幅を測定した。この際、10μm四方にわたりパターンが倒れることなく解像している最小のライン幅の平均値を、倒れ前線幅とした。この値が小さいほど、パターン倒れのマージンが広く、性能良好であることを示す。 [Fall front width]
The line width of the line-and-space pattern was measured while changing the exposure amount. At this time, the average value of the minimum line widths at which the pattern was resolved without collapsing over 10 μm square was defined as the collapse front width. The smaller this value is, the wider the margin of pattern collapse is, and the better the performance is.
評価結果を下記表7に示す。
The evaluation results are shown in Table 7 below.
〔パターン形成(2):EUV露光、アルカリ水溶液現像〕
シリコンウエハ上に下層膜形成用組成物AL412(Brewer Science社製)を塗布し、205℃で60秒間ベークして、膜厚20nmの下地膜を形成した。その上に、表8に示す樹脂組成物を塗布し、100℃で60秒間ベークして、膜厚30nmのレジスト膜を形成した。
EUV露光装置(Exitech社製、Micro Exposure Tool、NA0.3、Quadrupol、アウターシグマ0.68、インナーシグマ0.36)を用いて、得られたレジスト膜を有するシリコンウエハに対してパターン照射を行った。なお、レクチルとしては、ラインサイズ=20nmであり、且つ、ライン:スペース=1:1であるマスクを用いた。
露光後のレジスト膜を90℃で60秒間ベークした後、テトラメチルアンモニウムハイドロオキサイド水溶液(2.38質量%)で30秒間現像し、次いで純水で30秒間リンスした。その後、これをスピン乾燥してポジ型のパターンを得た。
前述と同様の方法でLWR性能と倒れ前線幅を評価した。 [Pattern formation (2): EUV exposure, alkaline aqueous solution development]
The underlayer film forming composition AL412 (manufactured by Brewer Science) was applied onto a silicon wafer and baked at 205 ° C. for 60 seconds to form a base film having a film thickness of 20 nm. The resin composition shown in Table 8 was applied thereto and baked at 100 ° C. for 60 seconds to form a resist film having a film thickness of 30 nm.
Using an EUV exposure apparatus (Micro Exposure Tool, NA0.3, Quadrupole, outer sigma 0.68, inner sigma 0.36, manufactured by Exitech), pattern irradiation was performed on the silicon wafer having the obtained resist film. rice field. As the lectil, a mask having a line size of 20 nm and a line: space = 1: 1 was used.
The resist film after exposure was baked at 90 ° C. for 60 seconds, developed with an aqueous solution of tetramethylammonium hydroxide (2.38% by mass) for 30 seconds, and then rinsed with pure water for 30 seconds. Then, this was spin-dried to obtain a positive pattern.
The LWR performance and the collapse front width were evaluated by the same method as described above.
シリコンウエハ上に下層膜形成用組成物AL412(Brewer Science社製)を塗布し、205℃で60秒間ベークして、膜厚20nmの下地膜を形成した。その上に、表8に示す樹脂組成物を塗布し、100℃で60秒間ベークして、膜厚30nmのレジスト膜を形成した。
EUV露光装置(Exitech社製、Micro Exposure Tool、NA0.3、Quadrupol、アウターシグマ0.68、インナーシグマ0.36)を用いて、得られたレジスト膜を有するシリコンウエハに対してパターン照射を行った。なお、レクチルとしては、ラインサイズ=20nmであり、且つ、ライン:スペース=1:1であるマスクを用いた。
露光後のレジスト膜を90℃で60秒間ベークした後、テトラメチルアンモニウムハイドロオキサイド水溶液(2.38質量%)で30秒間現像し、次いで純水で30秒間リンスした。その後、これをスピン乾燥してポジ型のパターンを得た。
前述と同様の方法でLWR性能と倒れ前線幅を評価した。 [Pattern formation (2): EUV exposure, alkaline aqueous solution development]
The underlayer film forming composition AL412 (manufactured by Brewer Science) was applied onto a silicon wafer and baked at 205 ° C. for 60 seconds to form a base film having a film thickness of 20 nm. The resin composition shown in Table 8 was applied thereto and baked at 100 ° C. for 60 seconds to form a resist film having a film thickness of 30 nm.
Using an EUV exposure apparatus (Micro Exposure Tool, NA0.3, Quadrupole, outer sigma 0.68, inner sigma 0.36, manufactured by Exitech), pattern irradiation was performed on the silicon wafer having the obtained resist film. rice field. As the lectil, a mask having a line size of 20 nm and a line: space = 1: 1 was used.
The resist film after exposure was baked at 90 ° C. for 60 seconds, developed with an aqueous solution of tetramethylammonium hydroxide (2.38% by mass) for 30 seconds, and then rinsed with pure water for 30 seconds. Then, this was spin-dried to obtain a positive pattern.
The LWR performance and the collapse front width were evaluated by the same method as described above.
評価結果を下記表8に示す。
The evaluation results are shown in Table 8 below.
〔パターン形成(3):EB(電子線)露光、アルカリ水溶液現像〕
表9に示す樹脂組成物を、スピンコーターを用いて、ヘキサメチルジシラザン処理を施したシリコン基板上に均一に塗布した。次いで、ホットプレート上で120℃、90秒間加熱乾燥を行い、膜厚35nmのレジスト膜を形成した。
電子線照射装置((株)日立製作所製HL750、加速電圧50keV)を用い、得られたレジスト膜に対して線幅24nmの1:1ラインアンドスペースパターンの6%ハーフトーンマスクを通して電子線照射を行った。照射後、直ぐにホットプレート上で110℃、60秒間加熱した。更に、濃度2.38質量%のテトラメチルアンモニウムヒドロキシド水溶液を用いて23℃で60秒間現像し、30秒間純水にてリンスした後、スピン乾燥してポジ型パターンを得た。 [Pattern formation (3): EB (electron beam) exposure, alkaline aqueous solution development]
The resin composition shown in Table 9 was uniformly applied onto a silicon substrate treated with hexamethyldisilazane using a spin coater. Next, heat drying was performed on a hot plate at 120 ° C. for 90 seconds to form a resist film having a film thickness of 35 nm.
Using an electron beam irradiation device (HL750 manufactured by Hitachi, Ltd., acceleration voltage 50 keV), electron beam irradiation is performed on the obtained resist film through a 6% halftone mask with a line width of 24 nm and a 1: 1 line and space pattern. went. Immediately after the irradiation, the mixture was heated on a hot plate at 110 ° C. for 60 seconds. Further, it was developed at 23 ° C. for 60 seconds using an aqueous solution of tetramethylammonium hydroxide having a concentration of 2.38% by mass, rinsed with pure water for 30 seconds, and then spin-dried to obtain a positive pattern.
表9に示す樹脂組成物を、スピンコーターを用いて、ヘキサメチルジシラザン処理を施したシリコン基板上に均一に塗布した。次いで、ホットプレート上で120℃、90秒間加熱乾燥を行い、膜厚35nmのレジスト膜を形成した。
電子線照射装置((株)日立製作所製HL750、加速電圧50keV)を用い、得られたレジスト膜に対して線幅24nmの1:1ラインアンドスペースパターンの6%ハーフトーンマスクを通して電子線照射を行った。照射後、直ぐにホットプレート上で110℃、60秒間加熱した。更に、濃度2.38質量%のテトラメチルアンモニウムヒドロキシド水溶液を用いて23℃で60秒間現像し、30秒間純水にてリンスした後、スピン乾燥してポジ型パターンを得た。 [Pattern formation (3): EB (electron beam) exposure, alkaline aqueous solution development]
The resin composition shown in Table 9 was uniformly applied onto a silicon substrate treated with hexamethyldisilazane using a spin coater. Next, heat drying was performed on a hot plate at 120 ° C. for 90 seconds to form a resist film having a film thickness of 35 nm.
Using an electron beam irradiation device (HL750 manufactured by Hitachi, Ltd., acceleration voltage 50 keV), electron beam irradiation is performed on the obtained resist film through a 6% halftone mask with a line width of 24 nm and a 1: 1 line and space pattern. went. Immediately after the irradiation, the mixture was heated on a hot plate at 110 ° C. for 60 seconds. Further, it was developed at 23 ° C. for 60 seconds using an aqueous solution of tetramethylammonium hydroxide having a concentration of 2.38% by mass, rinsed with pure water for 30 seconds, and then spin-dried to obtain a positive pattern.
〔評価〕
[ラフネス性能](LWR(line width roughness)性能)
ライン幅が平均24nmのラインパターンを解像する時の最適露光量にて解像した20nm(1:1)のラインアンドスペースのパターンに対して、測長走査型電子顕微鏡(SEM((株)日立製作所S-9380II))を使用してパターン上部から観察する際、線幅を50箇所で観測し、その測定ばらつきを3σで評価し、LWR(nm)とした。値が小さいほど良好な性能であることを示す。 〔evaluation〕
[Roughness performance] (LWR (line width noise) performance)
A length-measuring scanning electron microscope (SEM Co., Ltd.) was used for a 20 nm (1: 1) line-and-space pattern resolved at the optimum exposure amount when resolving a line pattern with an average line width of 24 nm. When observing from the upper part of the pattern using Hitachi, Ltd. S-9380II)), the line width was observed at 50 points, and the measurement variation was evaluated by 3σ and used as LWR (nm). The smaller the value, the better the performance.
[ラフネス性能](LWR(line width roughness)性能)
ライン幅が平均24nmのラインパターンを解像する時の最適露光量にて解像した20nm(1:1)のラインアンドスペースのパターンに対して、測長走査型電子顕微鏡(SEM((株)日立製作所S-9380II))を使用してパターン上部から観察する際、線幅を50箇所で観測し、その測定ばらつきを3σで評価し、LWR(nm)とした。値が小さいほど良好な性能であることを示す。 〔evaluation〕
[Roughness performance] (LWR (line width noise) performance)
A length-measuring scanning electron microscope (SEM Co., Ltd.) was used for a 20 nm (1: 1) line-and-space pattern resolved at the optimum exposure amount when resolving a line pattern with an average line width of 24 nm. When observing from the upper part of the pattern using Hitachi, Ltd. S-9380II)), the line width was observed at 50 points, and the measurement variation was evaluated by 3σ and used as LWR (nm). The smaller the value, the better the performance.
前述と同様の方法で倒れ前線幅の評価を行った。
The fall front width was evaluated by the same method as described above.
評価結果を下記表9に示す。
The evaluation results are shown in Table 9 below.
本発明によれば、超微細パターン(例えば、ピッチ50nm以下のパターン)において、パターン倒れが抑制でき、かつラフネス性能に優れるパターンを形成できる感活性光線性又は感放射線性樹脂組成物、上記感活性光線性又は感放射線性樹脂組成物により形成された感活性光線性又は感放射線性樹脂膜、上記感活性光線性又は感放射線性樹脂膜を備えたマスクブランクス、上記感活性光線性又は感放射線性樹脂組成物を用いるパターン形成方法及び電子デバイスの製造方法を提供することができる。
According to the present invention, in an ultrafine pattern (for example, a pattern having a pitch of 50 nm or less), a sensitive ray-sensitive or radiation-sensitive resin composition capable of suppressing pattern collapse and forming a pattern having excellent roughness performance, the above-mentioned sensitivity Sensitive ray-sensitive or radiation-sensitive resin film formed of a light-sensitive or radiation-sensitive resin composition, mask blanks provided with the above-mentioned sensitive light-sensitive or radiation-sensitive resin film, the above-mentioned sensitive light-sensitive or radiation-sensitive resin film. A pattern forming method using a resin composition and a method for producing an electronic device can be provided.
本発明を詳細にまた特定の実施態様を参照して説明したが、本発明の精神と範囲を逸脱することなく様々な変更や修正を加えることができることは当業者にとって明らかである。
本出願は、2020年4月28日出願の日本特許出願(特願2020-079747)に基づくものであり、その内容はここに参照として取り込まれる。
Although the present invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.
This application is based on a Japanese patent application filed on April 28, 2020 (Japanese Patent Application No. 2020-0797747), the contents of which are incorporated herein by reference.
本出願は、2020年4月28日出願の日本特許出願(特願2020-079747)に基づくものであり、その内容はここに参照として取り込まれる。
Although the present invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.
This application is based on a Japanese patent application filed on April 28, 2020 (Japanese Patent Application No. 2020-0797747), the contents of which are incorporated herein by reference.
Claims (19)
- 下記一般式(1)で表される繰り返し単位(1a)及び酸分解性基を有する繰り返し単位(1b)を含む樹脂(A)と、
活性光線又は放射線の照射により酸を発生する化合物(B)と、
を含有する感活性光線性又は感放射線性樹脂組成物。
一般式(1)中、
R1は炭酸エステル基を含む環状構造を有する基、又はSO2基を含む環状構造を有する基を表す。ただし、前記SO2基中の硫黄原子の2つの結合手はいずれも酸素原子と結合することはない。
R2は水素原子、ハロゲン原子、水酸基又は有機基を表す。
R3は水素原子、ハロゲン原子又はアルキル基を表す。
L1は単結合又は2価の連結基を表す。
L2は単結合又は2価の連結基を表す。
Xは-COO-、-O-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
m1及びn1は各々1~4の整数を表す。ただし、m1+n1=5を満たす。
R1、R2、X及びL1が複数存在する場合、複数のR1、R2、X及びL1は、それぞれ同じであっても異なっていてもよい。 A resin (A) containing a repeating unit (1a) represented by the following general formula (1) and a repeating unit (1b) having an acid-degradable group,
Compound (B) that generates acid by irradiation with active light or radiation, and
A sensitive light-sensitive or radiation-sensitive resin composition containing.
In general formula (1),
R 1 represents a group having a cyclic structure containing a carbonic acid ester group or a group having a cyclic structure containing SO 2 groups. However, neither of the two bonds of the sulfur atom in the SO 2 group is bonded to the oxygen atom.
R 2 represents a hydrogen atom, a halogen atom, a hydroxyl group or an organic group.
R 3 represents a hydrogen atom, a halogen atom or an alkyl group.
L 1 represents a single bond or a divalent linking group.
L 2 represents a single bond or a divalent linking group.
X is -COO -, - O -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
m 1 and n 1 each represent an integer of 1 to 4. However, m 1 + n 1 = 5 is satisfied.
If R 1, R 2, X and L 1 there are a plurality, the plurality of R 1, R 2, X and L 1 may be different from one another respectively the same. - 前記一般式(1)中のL2が単結合を表す、請求項1に記載の感活性光線性又は感放射線性樹脂組成物。 The actinic or radiation-sensitive resin composition according to claim 1, wherein L 2 in the general formula (1) represents a single bond.
- 前記一般式(1)中のR1が、炭酸エステル基を含む環状構造を有する基、又は硫黄原子の2つの結合手がいずれも炭素原子又は窒素原子と結合しているSO2基を含む環状構造を有する基を表す、請求項1又は2に記載の感活性光線性又は感放射線性樹脂組成物。 R 1 in the general formula (1) is a group having a cyclic structure containing a carbonic acid ester group, or a cyclic containing SO 2 groups in which two bonds of a sulfur atom are both bonded to a carbon atom or a nitrogen atom. The sensitive light-sensitive or radiation-sensitive resin composition according to claim 1 or 2, which represents a group having a structure.
- 前記繰り返し単位(1a)が下記一般式(2)で表される、請求項1~3のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
一般式(2)中、R1、R2、R3、L1、m1及びn1は、それぞれ前記一般式(1)におけるものと同じ意味を表す。
X’は-COO-、-CONR4-、-SO3-、-SO2NR4-又は-C(CF3)2O-を表し、R4は水素原子又はアルキル基を表す。
R1、R2、X’及びL1が複数存在する場合、複数のR1、R2、X’及びL1は、それぞれ同じであっても異なっていてもよい。 The actinic or radiation-sensitive resin composition according to any one of claims 1 to 3, wherein the repeating unit (1a) is represented by the following general formula (2).
In the general formula (2), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1), respectively.
X 'is -COO -, - CONR 4 -, - SO 3 -, - SO 2 NR 4 - or -C (CF 3) 2 O- and represents, R 4 represents a hydrogen atom or an alkyl group.
'If and L 1 there are a plurality, the plurality of R 1, R 2, X' R 1, R 2, X and L 1 may be different from one another respectively the same. - 前記樹脂(A)が、更に、ラクトン構造、カルボキシル基、水酸基及びスルホンアミド基からなる群より選ばれる少なくとも1つを有する繰り返し単位(1c)を含む、請求項4に記載の感活性光線性又は感放射線性樹脂組成物。 The active photosensitivity or photosensitivity according to claim 4, wherein the resin (A) further contains a repeating unit (1c) having at least one selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group. Radiation sensitive resin composition.
- 前記一般式(2)中のX’が-COO-を表す、請求項4又は5に記載の感活性光線性又は感放射線性樹脂組成物。 The actinic or radiation-sensitive resin composition according to claim 4 or 5, wherein X'in the general formula (2) represents -COO-.
- 前記一般式(2)中のR1が下記一般式(4-1)又は(4-2)で表される、請求項4~6のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
一般式(4-1)中、
R411、R412、R413、R414及びR415は、それぞれ独立に水素原子又はアルキル基を表す。
p41及びp42は、それぞれ独立に0~2の整数を表す。ただし、p41+p42≦2を満たす。R411、R412、R414及びR415が複数存在する場合、複数のR411、R412、R414及びR415は、それぞれ同じであっても異なっていてもよい。
一般式(4-2)中、
R421、R422、R423、R424及びR425は、それぞれ独立に水素原子又はアルキル基を表す。
p43及びp44は、それぞれ独立に0~2の整数を表す。ただし、p43+p44≦2を満たす。R421、R422、R424及びR425が複数存在する場合、複数のR421、R422、R424及びR425は、それぞれ同じであっても異なっていてもよい。
一般式(4-1)及び(4-2)中、*は結合位置を表す。 The actinic cheilitis or radiation-sensitive radiation according to any one of claims 4 to 6, wherein R 1 in the general formula (2) is represented by the following general formula (4-1) or (4-2). Sex resin composition.
In general formula (4-1),
R 411 , R 412 , R 413 , R 414 and R 415 each independently represent a hydrogen atom or an alkyl group.
p 41 and p 42 each independently represent an integer of 0 to 2. However, p 41 + p 42 ≤ 2 is satisfied. If R 411, R 412, R 414 and R 415 there are a plurality, a plurality of R 411, R 412, R 414 and R 415 may be different from one another respectively the same.
In general formula (4-2),
R 421 , R 422 , R 423 , R 424 and R 425 each independently represent a hydrogen atom or an alkyl group.
p 43 and p 44 each independently represent an integer of 0 to 2. However, p 43 + p 44 ≤ 2 is satisfied. If R 421, R 422, R 424 and R 425 there are a plurality, a plurality of R 421, R 422, R 424 and R 425 may be different from one another respectively the same.
In the general formulas (4-1) and (4-2), * represents the bonding position. - 前記一般式(2)中のR1が前記一般式(4-1)で表される、請求項7に記載の感活性光線性又は感放射線性樹脂組成物。 The actinic or radiation-sensitive resin composition according to claim 7, wherein R 1 in the general formula (2) is represented by the general formula (4-1).
- 前記繰り返し単位(1a)が下記一般式(5)で表され、かつ前記樹脂(A)が、更に、ラクトン構造、カルボキシル基、水酸基及びスルホンアミド基からなる群より選ばれる少なくとも1つを有する繰り返し単位(1c)を含む、請求項1~3のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
一般式(5)中、R1、R2、R3、L1、m1及びn1は、それぞれ前記一般式(1)におけるものと同じ意味を表す。
R1、R2及びL1が複数存在する場合、複数のR1、R2及びL1は、それぞれ同じであっても異なっていてもよい。 The repeating unit (1a) is represented by the following general formula (5), and the resin (A) further has at least one selected from the group consisting of a lactone structure, a carboxyl group, a hydroxyl group and a sulfonamide group. The sensitive light-sensitive or radiation-sensitive resin composition according to any one of claims 1 to 3, which comprises a unit (1c).
In the general formula (5), R 1 , R 2 , R 3 , L 1 , m 1 and n 1 have the same meanings as those in the general formula (1), respectively.
If R 1, R 2 and L 1 there are a plurality, the plurality of R 1, R 2 and L 1 may be different from one another respectively the same. - 前記一般式(5)中のR1が下記一般式(6-1)又は(6-2)で表される、請求項9に記載の感活性光線性又は感放射線性樹脂組成物。
一般式(6-1)中、
R611、R612、R613、R614及びR615は、それぞれ独立に水素原子又はアルキル基を表す。
p61及びp62は、それぞれ独立に0~2の整数を表す。ただし、p61+p62≦2を満たす。R611、R612、R614及びR615が複数存在する場合、複数のR611、R612、R614及びR615は、それぞれ同じであっても異なっていてもよい。
一般式(6-2)中、
R621、R622、R623、R624及びR625は、それぞれ独立に水素原子又はアルキル基を表す。
p63及びp64は、それぞれ独立に0~2の整数を表す。ただし、p63+p64≦2を満たす。R621、R622、R624及びR625が複数存在する場合、複数のR621、R622、R624及びR625は、それぞれ同じであっても異なっていてもよい。
一般式(6-1)及び(6-2)中、*は結合位置を表す。 The actinic or radiation-sensitive resin composition according to claim 9, wherein R 1 in the general formula (5) is represented by the following general formula (6-1) or (6-2).
In general formula (6-1),
R 611 , R 612 , R 613 , R 614 and R 615 each independently represent a hydrogen atom or an alkyl group.
p 61 and p 62 each independently represent an integer of 0 to 2. However, p 61 + p 62 ≤ 2 is satisfied. If R 611, R 612, R 614 and R 615 there are a plurality, a plurality of R 611, R 612, R 614 and R 615 may be different from one another respectively the same.
In general formula (6-2),
R 621 , R 622 , R 623 , R 624 and R 625 each independently represent a hydrogen atom or an alkyl group.
p 63 and p 64 each independently represent an integer of 0 to 2. However, p 63 + p 64 ≤ 2 is satisfied. If R 621, R 622, R 624 and R 625 there are a plurality, a plurality of R 621, R 622, R 624 and R 625 may be different from one another respectively the same.
In the general formulas (6-1) and (6-2), * represents the bonding position. - 前記一般式(5)中のR1が前記一般式(6-1)で表される、請求項10に記載の感活性光線性又は感放射線性樹脂組成物。 The actinic or radiation-sensitive resin composition according to claim 10, wherein R 1 in the general formula (5) is represented by the general formula (6-1).
- 前記繰り返し単位(1a)の含有量が前記樹脂(A)の全繰り返し単位に対して10~60質量%である、請求項1~11のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。 The actinic cheilitis or radiation-sensitive radiation according to any one of claims 1 to 11, wherein the content of the repeating unit (1a) is 10 to 60% by mass with respect to all the repeating units of the resin (A). Sex resin composition.
- 前記化合物(B)がアニオンとカチオンとを含むイオン性化合物である、請求項1~12のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。 The actinic or radiation-sensitive resin composition according to any one of claims 1 to 12, wherein the compound (B) is an ionic compound containing an anion and a cation.
- 前記化合物(B)が1つ以上のアニオン性分子と1つ以上のカチオン性分子とで構成され、前記カチオン性分子のうち少なくとも1つがフッ素原子を含む、請求項1~13のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。 Any one of claims 1 to 13, wherein the compound (B) is composed of one or more anionic molecules and one or more cationic molecules, and at least one of the cationic molecules contains a fluorine atom. The sensitive light-sensitive or radiation-sensitive resin composition according to.
- 前記化合物(B)が下記一般式(a)~(c)のいずれかで表される、請求項1~13のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物。
Ma1 +Aa --La-Ba -Ma2 + (a)
(Mb1 +Ab -)nb-Lb-Bb -Mb2 + (b)
(Mc +Ac -)nc-Lc (c)
一般式(a)中、Ma1 +及びMa2 +は、それぞれ独立に有機カチオンを表し、Laは2価の有機基を表し、Aa -及びBa -は、それぞれ独立にアニオン性官能基を表す。
ただし、一般式(a)で表される化合物のMa1 +及びMa2 +がそれぞれ水素原子で置換されたHAa-La-BaHで表される化合物において、HAaで表される基のpKaはBaHで表される基のpKaよりも小さい。
一般式(b)中、Mb1 +及びMb2 +は、それぞれ独立に有機カチオンを表し、Lbは(nb+1)価の有機基を表し、Ab -及びBb -は、それぞれ独立にアニオン性官能基を表し、nbは2以上の整数を表す。複数のMb1 +及びAb -は、それぞれ同じであっても異なっていてもよい。
ただし、一般式(b)で表される化合物のMb1 +及びMb2 +がそれぞれ水素原子で置換された(HAb)nb-Lb-BbHで表される化合物において、HAbで表される基のpKaはBbHで表される基のpKaよりも小さい。
一般式(c)中、Mc +は有機カチオンを表し、Ac -はアニオン性官能基を表し、Lcは酸を中和可能な非イオン性の有機部位を表し、ncは2以上の整数を表す。複数のMc +及びAc -は、それぞれ同じであっても異なっていてもよい。 The actinic or radiation-sensitive resin composition according to any one of claims 1 to 13, wherein the compound (B) is represented by any of the following general formulas (a) to (c).
M a1 + A a - -L a -B a - M a2 + (a)
(M b1 + A b -) nb -L b -B b - M b2 + (b)
(M c + A c -) nc -L c (c)
In the general formula (a), M a1 + and M a2 + each independently represent an organic cation, L a represents a divalent organic group, A a - and B a - are each independently an anionic functional Represents a group.
However, in the general formula (a) HA a -L a -B represented by a H compound M a1 + and M a2 + is substituted with a hydrogen atom each of the compounds represented by the represented by HA a pKa groups is less than the pKa of the groups represented by B a H.
In the general formula (b), M b1 + and M b2 + each independently represent an organic cation, L b represents a (nb + 1) -valent organic group, and Ab − and B b − each independently represent an anion. It represents a sex functional group, and nb represents an integer of 2 or more. The plurality of M b1 + and Ab − may be the same or different from each other.
However, in the general formula (b) M b1 + and M b2 + of the compound represented by is substituted with hydrogen atoms, respectively (HA b) a compound represented by nb -L b -B b H, in HA b The pKa of the group represented is smaller than the pKa of the group represented by B b H.
In the general formula (c), Mc + represents an organic cation, Ac − represents an anionic functional group, L c represents a nonionic organic moiety capable of neutralizing an acid, and nc represents 2 or more. Represents an integer. The plurality of Mc + and Ac − may be the same or different from each other. - 請求項1~15のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物により形成された感活性光線性又は感放射線性膜。 A sensitive light-sensitive or radiation-sensitive film formed by the sensitive light-sensitive or radiation-sensitive resin composition according to any one of claims 1 to 15.
- 請求項16に記載の感活性光線性又は感放射線性膜を備えたマスクブランクス。 A mask blank having the sensitive light-sensitive or radiation-sensitive film according to claim 16.
- 請求項1~15のいずれか1項に記載の感活性光線性又は感放射線性樹脂組成物を用いて基板上にレジスト膜を形成する工程と、
前記レジスト膜を露光する工程と、
現像液を用いて前記露光されたレジスト膜を現像し、パターンを形成する工程と、
を含むパターン形成方法。 A step of forming a resist film on a substrate using the actinic cheilitis or radiation-sensitive resin composition according to any one of claims 1 to 15.
The step of exposing the resist film and
A step of developing the exposed resist film with a developing solution to form a pattern, and
Pattern forming method including. - 請求項18に記載のパターン形成方法を含む電子デバイスの製造方法。
A method for manufacturing an electronic device, which comprises the pattern forming method according to claim 18.
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WO2024084970A1 (en) * | 2022-10-21 | 2024-04-25 | 富士フイルム株式会社 | Active-ray-sensitive or radiation-sensitive resin composition, active-ray-sensitive or radiation-sensitive film, pattern formation method, and electronic device manufacturing method |
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JP2014137454A (en) * | 2013-01-16 | 2014-07-28 | Jsr Corp | Positive-type radiation-sensitive resin composition, cured film, method for producing the same, semiconductor element, and display device |
JP2015024989A (en) * | 2013-06-17 | 2015-02-05 | 住友化学株式会社 | Salt, acid generator, resist composition, and method for producing resist pattern |
WO2017169626A1 (en) * | 2016-03-30 | 2017-10-05 | 富士フイルム株式会社 | Active light sensitive or radiation sensitive resin composition, pattern forming method and method for manufacturing electronic device |
JP2019003173A (en) * | 2017-06-13 | 2019-01-10 | 住友化学株式会社 | Resist composition and method for producing resist pattern |
JP2019045864A (en) * | 2017-09-04 | 2019-03-22 | 富士フイルム株式会社 | Reversal pattern formation method, and manufacturing method of electronic device |
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JP2014137454A (en) * | 2013-01-16 | 2014-07-28 | Jsr Corp | Positive-type radiation-sensitive resin composition, cured film, method for producing the same, semiconductor element, and display device |
JP2015024989A (en) * | 2013-06-17 | 2015-02-05 | 住友化学株式会社 | Salt, acid generator, resist composition, and method for producing resist pattern |
WO2017169626A1 (en) * | 2016-03-30 | 2017-10-05 | 富士フイルム株式会社 | Active light sensitive or radiation sensitive resin composition, pattern forming method and method for manufacturing electronic device |
JP2019003173A (en) * | 2017-06-13 | 2019-01-10 | 住友化学株式会社 | Resist composition and method for producing resist pattern |
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