WO2021038766A1 - Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element, and optical semiconductor device - Google Patents
Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element, and optical semiconductor device Download PDFInfo
- Publication number
- WO2021038766A1 WO2021038766A1 PCT/JP2019/033769 JP2019033769W WO2021038766A1 WO 2021038766 A1 WO2021038766 A1 WO 2021038766A1 JP 2019033769 W JP2019033769 W JP 2019033769W WO 2021038766 A1 WO2021038766 A1 WO 2021038766A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical semiconductor
- resin composition
- thermosetting resin
- semiconductor element
- substrate
- Prior art date
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- 239000011342 resin composition Substances 0.000 title claims abstract description 66
- 229920001187 thermosetting polymer Polymers 0.000 title claims abstract description 63
- 230000003287 optical effect Effects 0.000 title claims description 78
- 239000004065 semiconductor Substances 0.000 title claims description 77
- 239000000758 substrate Substances 0.000 title claims description 37
- 239000003822 epoxy resin Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 39
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 33
- 239000000344 soap Substances 0.000 claims abstract description 22
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 16
- 239000011701 zinc Substances 0.000 claims abstract description 16
- 239000012463 white pigment Substances 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011256 inorganic filler Substances 0.000 claims abstract description 12
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 12
- 239000002245 particle Substances 0.000 claims description 32
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 16
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 16
- 150000004668 long chain fatty acids Chemical class 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- 239000006082 mold release agent Substances 0.000 claims description 4
- 239000004848 polyfunctional curative Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 description 21
- 239000011347 resin Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- -1 silane compound Chemical class 0.000 description 14
- 238000000465 moulding Methods 0.000 description 13
- 238000004898 kneading Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 9
- 229920001568 phenolic resin Polymers 0.000 description 8
- 239000005011 phenolic resin Substances 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 7
- 238000001721 transfer moulding Methods 0.000 description 7
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 150000008065 acid anhydrides Chemical class 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000001579 optical reflectometry Methods 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 125000002723 alicyclic group Chemical group 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000012778 molding material Substances 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 3
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 3
- 229910000410 antimony oxide Inorganic materials 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000004780 naphthols Chemical class 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 150000002903 organophosphorus compounds Chemical class 0.000 description 3
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 2
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000007973 cyanuric acids Chemical class 0.000 description 2
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- UTOPWMOLSKOLTQ-UHFFFAOYSA-N octacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O UTOPWMOLSKOLTQ-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- SMQUZDBALVYZAC-UHFFFAOYSA-N salicylaldehyde Chemical compound OC1=CC=CC=C1C=O SMQUZDBALVYZAC-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000012321 sodium triacetoxyborohydride Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- PXGZQGDTEZPERC-UHFFFAOYSA-N 1,4-cyclohexanedicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)CC1 PXGZQGDTEZPERC-UHFFFAOYSA-N 0.000 description 1
- MODAACUAXYPNJH-UHFFFAOYSA-N 1-(methoxymethyl)-4-[4-(methoxymethyl)phenyl]benzene Chemical group C1=CC(COC)=CC=C1C1=CC=C(COC)C=C1 MODAACUAXYPNJH-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 1
- BLBVJHVRECUXKP-UHFFFAOYSA-N 2,3-dimethoxy-1,4-dimethylbenzene Chemical group COC1=C(C)C=CC(C)=C1OC BLBVJHVRECUXKP-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- ODGCZQFTJDEYNI-UHFFFAOYSA-N 2-methylcyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1(C)C=CCCC1C(O)=O ODGCZQFTJDEYNI-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- PAVNZLVXYJDFNR-UHFFFAOYSA-N 3,3-dimethyloxane-2,6-dione Chemical compound CC1(C)CCC(=O)OC1=O PAVNZLVXYJDFNR-UHFFFAOYSA-N 0.000 description 1
- UVYLEXYRTBDZNM-UHFFFAOYSA-N 4,4-diethyloxane-2,6-dione Chemical compound CCC1(CC)CC(=O)OC(=O)C1 UVYLEXYRTBDZNM-UHFFFAOYSA-N 0.000 description 1
- OECTYKWYRCHAKR-UHFFFAOYSA-N 4-vinylcyclohexene dioxide Chemical compound C1OC1C1CC2OC2CC1 OECTYKWYRCHAKR-UHFFFAOYSA-N 0.000 description 1
- YGYCECQIOXZODZ-UHFFFAOYSA-N 4415-87-6 Chemical compound O=C1OC(=O)C2C1C1C(=O)OC(=O)C12 YGYCECQIOXZODZ-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 1
- FMACFWAQBPYRFO-UHFFFAOYSA-N 5-[9-(1,3-dioxo-2-benzofuran-5-yl)fluoren-9-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C2(C3=CC=CC=C3C3=CC=CC=C32)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 FMACFWAQBPYRFO-UHFFFAOYSA-N 0.000 description 1
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- RBHIUNHSNSQJNG-UHFFFAOYSA-N 6-methyl-3-(2-methyloxiran-2-yl)-7-oxabicyclo[4.1.0]heptane Chemical compound C1CC2(C)OC2CC1C1(C)CO1 RBHIUNHSNSQJNG-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
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- 239000004925 Acrylic resin Substances 0.000 description 1
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- 229930185605 Bisphenol Natural products 0.000 description 1
- 241000202785 Calyptronoma Species 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000005639 Lauric acid Substances 0.000 description 1
- 235000021353 Lignoceric acid Nutrition 0.000 description 1
- CQXMAMUUWHYSIY-UHFFFAOYSA-N Lignoceric acid Natural products CCCCCCCCCCCCCCCCCCCCCCCC(=O)OCCC1=CC=C(O)C=C1 CQXMAMUUWHYSIY-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
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- 235000021314 Palmitic acid Nutrition 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- CEGOLXSVJUTHNZ-UHFFFAOYSA-K aluminium tristearate Chemical compound [Al+3].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CEGOLXSVJUTHNZ-UHFFFAOYSA-K 0.000 description 1
- 229940063655 aluminum stearate Drugs 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
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- 229940116226 behenic acid Drugs 0.000 description 1
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- NIDNOXCRFUCAKQ-UHFFFAOYSA-N bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1C2C=CC1C(C(=O)O)C2C(O)=O NIDNOXCRFUCAKQ-UHFFFAOYSA-N 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- DJUWPHRCMMMSCV-UHFFFAOYSA-N bis(7-oxabicyclo[4.1.0]heptan-4-ylmethyl) hexanedioate Chemical compound C1CC2OC2CC1COC(=O)CCCCC(=O)OCC1CC2OC2CC1 DJUWPHRCMMMSCV-UHFFFAOYSA-N 0.000 description 1
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
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- 229930003836 cresol Natural products 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- QYQADNCHXSEGJT-UHFFFAOYSA-N cyclohexane-1,1-dicarboxylate;hydron Chemical compound OC(=O)C1(C(O)=O)CCCCC1 QYQADNCHXSEGJT-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
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- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FARYTWBWLZAXNK-WAYWQWQTSA-N ethyl (z)-3-(methylamino)but-2-enoate Chemical compound CCOC(=O)\C=C(\C)NC FARYTWBWLZAXNK-WAYWQWQTSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
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- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
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- 238000007429 general method Methods 0.000 description 1
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- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- 150000004965 peroxy acids Chemical class 0.000 description 1
- 239000002530 phenolic antioxidant Substances 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
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- 229920001296 polysiloxane Polymers 0.000 description 1
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- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical class OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
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- 230000000630 rising effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- JIYNFFGKZCOPKN-UHFFFAOYSA-N sbb061129 Chemical compound O=C1OC(=O)C2C1C1C=C(C)C2C1 JIYNFFGKZCOPKN-UHFFFAOYSA-N 0.000 description 1
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- 239000011734 sodium Substances 0.000 description 1
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- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
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- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- 125000005590 trimellitic acid group Chemical class 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
- C08K5/098—Metal salts of carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/22—Expanded, porous or hollow particles
- C08K7/24—Expanded, porous or hollow particles inorganic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the present invention relates to a thermosetting resin composition for light reflection, a substrate for mounting an optical semiconductor element, and an optical semiconductor device.
- Optical semiconductor devices that combine optical semiconductor elements such as LEDs (Light Emitting Diodes) with phosphors have high energy efficiency and long life, so they are used for outdoor displays, portable liquid crystal backlights, in-vehicle applications, etc. It is used for various purposes and its demand is expanding. Along with this, the brightness of LED devices is increasing, and it is required to prevent the junction temperature from rising due to an increase in the amount of heat generated by the element or the deterioration of the optical semiconductor device due to a direct increase in light energy.
- LEDs Light Emitting Diodes
- Patent Document 1 discloses a substrate for mounting an optical semiconductor device using a thermosetting resin composition containing an acid anhydride as a curing agent as a material for a reflector.
- thermosetting resin composition is required to have excellent mold releasability from the molding die from the viewpoint of productivity.
- the cured product formed from the thermosetting resin composition is required to have heat resistance that not only enhances the light reflectance but also maintains the optical characteristics even when used for a long time at a high temperature.
- an object of the present invention is to provide a thermosetting resin composition for light reflection, which is excellent in releasability and heat resistance, a substrate for mounting an optical semiconductor element, and an optical semiconductor device using the same.
- the present invention contains a thermosetting resin composition for light reflection, which contains an epoxy resin, a curing agent, an inorganic filler, a white pigment and a mold release agent, and the mold release agent contains a zinc-based metal soap and an aluminum-based metal soap. Regarding things.
- the zinc-based metal soap may contain a metal salt of zinc and a long-chain fatty acid having 10 or more carbon atoms.
- the carbon number of the long chain fatty acid may be 20 or more.
- the curing agent may contain a tetracarboxylic dianhydride having a melting point of 180 to 400 ° C.
- the inorganic filler may contain inorganic hollow particles having a central particle size of 1 to 25 ⁇ m.
- the present invention relates to a substrate for mounting an optical semiconductor device, which comprises a cured product of the thermosetting resin composition for light reflection.
- the substrate for mounting an optical semiconductor element according to the present invention has a recess composed of a bottom surface and a wall surface, and the bottom surface of the recess may be a mounting portion for the optical semiconductor element.
- at least a part of the wall surface of the recess is a cured product of the thermosetting resin composition for light reflection.
- the substrate for mounting an optical semiconductor element according to the present invention includes a substrate, a first connection terminal and a second connection terminal provided on the substrate, and a first connection terminal and a second connection terminal. A cured product of the thermosetting resin composition for light reflection provided between them may be provided.
- the present invention relates to an optical semiconductor device having the above-mentioned optical semiconductor element mounting substrate and an optical semiconductor element mounted on the optical semiconductor element mounting substrate.
- thermosetting resin composition for light reflection which is excellent in releasability and heat resistance
- a substrate for mounting an optical semiconductor element and an optical semiconductor device using the same.
- the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
- the upper limit value or the lower limit value of the numerical range of one step may be replaced with the upper limit value or the lower limit value of the numerical range of another step.
- the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
- “A or B” may include either A or B, or both.
- the materials exemplified in the present specification may be used alone or in combination of two or more.
- (meth) acrylate means at least one of acrylate and the corresponding methacrylate.
- thermosetting resin composition for light reflection contains an epoxy resin, a curing agent, an inorganic filler and a white pigment, and the release agent contains a zinc-based metal soap and an aluminum-based metal soap. ..
- epoxy resin an epoxy resin generally used in an epoxy resin molding material for encapsulating electronic parts can be used. Since the thermosetting resin composition according to the present embodiment contains an epoxy resin, it is possible to form a cured product having high thermal hardness and bending strength and improved mechanical properties.
- the epoxy resin for example, an epoxy resin obtained by epoxidizing phenols such as phenol novolac type epoxy resin and orthocresol novolac type epoxy resin and novolak resin of aldehydes; bisphenol A, bisphenol F, bisphenol S, alkyl-substituted bisphenol and the like.
- Glysidyl ether Glysidyl ether
- Glysidylamine type epoxy resin obtained by reacting polyamines such as diaminodiphenylmethane and isocyanuric acid with epichlorohydrin
- Linear aliphatic epoxy resin obtained by oxidizing olefin bonds with a peracid such as peracetic acid
- alicyclic Group epoxy resin can be mentioned.
- the epoxy resin may be used alone or in combination of two or more.
- the epoxy resins are diglycidyl isocyanurate, triglycidyl isocyanurate, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, 1,2-cyclohexanedicarboxylic acid, 1,3-. It may contain a cyclohexanedicarboxylic acid or a dicarboxylic acid diglycidyl ester derived from a 1,4-cyclohexanedicarboxylic acid.
- the epoxy resin diglycidyl esters of dicarboxylic acids such as phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, nadic acid and methylnadic acid are also suitable. It may contain glycidyl esters such as nuclear hydrogenated trimellitic acid and nuclear hydrogenated pyromellitic acid having an alicyclic structure in which the aromatic ring is hydrogenated.
- the epoxy resin may contain a polyorganosiloxane having an epoxy group, which is produced by heating a silane compound in the presence of an organic solvent, an organic base and water, hydrolyzing and condensing the silane compound.
- a commercially available product may be used as the epoxy resin.
- 3,4-epoxycyclohexylmethyl-3', 4'-epoxycyclohexanecarboxylate for example, the product names of Daicel Co., Ltd. "Selokiside 2021", “Selokiside 2021A” and “Selokiside 2021P", products of Dow Chemical Japan Co., Ltd.
- the names "ERL4221”, “ERL4221D” and "ERL4221E” are available.
- the bis (3,4-epoxycyclohexylmethyl) adipate for example, the product name "ERL4299" of Dow Chemical Japan Co., Ltd.
- the curing agent a curing agent generally used in epoxy resin molding materials for encapsulating electronic components can be used.
- the curing agent is not particularly limited as long as it can react with an epoxy resin to obtain a cured product, but a curing agent with less coloring is preferable, and a colorless or pale yellow curing agent is more preferable.
- the curing agent include an acid anhydride-based curing agent, an isocyanuric acid derivative-based curing agent, and a phenol-based curing agent.
- the curing agent may be used alone or in combination of two or more.
- the curing agent according to the present embodiment contains a tetracarboxylic dianhydride having a melting point of 180 to 400 ° C. (hereinafter, may be simply referred to as "tetracarboxylic dianhydride”) as an acid anhydride-based curing agent. It's fine.
- tetracarboxylic dianhydride a tetracarboxylic dianhydride having a melting point of 180 to 400 ° C.
- the melting point of the tetracarboxylic dianhydride may be 200 to 380 ° C. or 210 to 350 ° C. from the viewpoint of uniformly dispersing the tetracarboxylic dianhydride in the resin composition.
- the tetracarboxylic dianhydride may have an aromatic ring or an alicyclic ring in order to further improve the heat resistance.
- the tetracarboxylic dianhydride having an aromatic ring may be at least one selected from the group consisting of a tetracarboxylic dianhydride having two or more benzene rings and a tetracarboxylic dianhydride having a naphthalene ring.
- the tetracarboxylic dianhydride having two or more benzene rings may be a compound represented by the following formula (1).
- R represents a single bond, an ether bond, an alkyl group, a carbonyl group, a sulfonyl group, a hexafluoroisopropylidene group, or a fluorene group.
- Examples of the tetracarboxylic dianhydride having an alicyclic ring include 1,2,3,4-cyclobutanetetracarboxylic dianhydride.
- Examples of the tetracarboxylic dianhydride having an aromatic ring include 4,4'-biphthalic anhydride, 4,4'-carbonyldiphthalic anhydride, 4,4'-sulfonyldiphthalic anhydride, and 4 , 4'-(hexafluoroisopropyridene) diphthalic anhydride, 4,4'-oxydiphthalic anhydride, 9,9-bis (3,4-dicarboxyphenyl) fluorene dianhydride, and 2,3,6 , 7-Naphthalenetetracarboxylic dianhydride.
- the curing agent according to the present embodiment may contain an acid anhydride-based curing agent having a melting point of less than 180 ° C.
- the acid anhydride-based curing agent having a melting point of less than 180 ° C. include phthalic anhydride, maleic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylnadic anhydride, nadic acid anhydride, and anhydrous.
- Examples thereof include glutaric acid, dimethylglutaric anhydride, diethylglutaric anhydride, succinic anhydride, phthalic anhydride, methyltetrahydrophthalic anhydride, and tetracarboxylic dianhydride represented by the following formula (2).
- Rx represents a divalent organic group
- n represents an integer of 1 to 10.
- the divalent organic group may be a divalent saturated hydrocarbon group having a saturated hydrocarbon ring, and examples of the saturated hydrocarbon include cyclobutane, cyclopentane, cyclohexane, cycloheptan, cyclooctane, norbornen, and di. Cyclopentadiene, adamantan, naphthalene hydride and biphenyl hydride can be mentioned.
- isocyanuric acid derivative examples include 1,3,5-tris (1-carboxymethyl) isocyanurate, 1,3,5-tris (2-carboxyethyl) isocyanurate, and 1,3,5-tris (3-). Carboxypropyl) isocyanurate and 1,3-bis (2-carboxyethyl) isocyanurate.
- phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene.
- phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol and / or naphthols such as ⁇ -naphthol, ⁇ -naphthol and dihydroxynaphthalene.
- Formaldehyde, benzaldehyde, salicylaldehyde and other aldehydes are condensed or co-condensed under an acidic catalyst to obtain a novolak-type phenolic resin; phenols and / or naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl.
- Cyclopentadiene-type phenolic resins triphenylmethane-type phenolic resins; terpen-modified phenolic resins; paraxylylene and / or metaxylylene-modified phenolic resins; melamine-modified phenolic resins; and phenolic resins obtained by copolymerizing two or more of these.
- the content of the curing agent is 10 to 150 parts by mass, 50 to 130 parts by mass, or 60 to 120 parts by mass with respect to 100 parts by mass of the epoxy resin. Good.
- the mixing ratio of the curing agent is 0.5 to 2.0 equivalents of the active group (acid anhydride group or hydroxyl group) in the curing agent capable of reacting with the epoxy group with respect to 1 equivalent of the epoxy group in the epoxy resin. It may be 0.6 to 1.5 equivalents or 0.7 to 1.2 equivalents.
- the active group is 0.5 equivalent or more, the glass transition temperature of the cured product formed from the thermosetting resin composition becomes high, and a sufficient elastic modulus can be easily obtained.
- the active group is 2.0 equivalents or less, the strength after curing is unlikely to decrease.
- the white pigment is used to impart a white color tone to the cured product (molded product) obtained from the thermosetting resin composition according to the present embodiment, and is particularly molded by making the color tone highly white.
- the light reflectance of the body can be improved.
- the white pigment examples include rare earth oxides such as yttrium oxide, titanium oxide, zinc oxide, aluminum oxide (alumina), magnesium oxide, antimony oxide, zinc sulfate, and zirconium oxide. These may be used individually by 1 type or in combination of 2 or more type.
- the white pigment preferably contains at least one selected from the group consisting of titanium oxide, zinc oxide, alumina, magnesium oxide, antimony oxide and zirconium oxide, and titanium oxide and antimony oxide. It is more preferable to contain at least one selected from the group consisting of and zirconium oxide.
- the central particle size of the white pigment may be 0.05 to 10 ⁇ m, 0.08 to 8 ⁇ m, or 0.1 to 5 ⁇ m.
- the central particle size of the white pigment is 0.05 ⁇ m or more, the dispersibility becomes better, and when it is less than 10 ⁇ m, the light reflection characteristic of the cured product becomes better.
- the central particle size can be determined as the mass average value D50 (or median diameter) in the particle size distribution measurement by the laser light diffraction method.
- thermosetting resin composition according to the present embodiment contains an inorganic filler from the viewpoint of improving moldability.
- the inorganic filler include quartz, fumed silica, precipitated silica, silicic anhydride, fused silica, crystalline silica, ultrafine atypical silica, barium sulfate, magnesium carbonate, barium carbonate, aluminum hydroxide, and hydroxide.
- examples include magnesium, potassium titanate, calcium silicate, and inorganic hollow particles.
- the inorganic filler may contain fused silica.
- the central particle size of the molten silica may be 1 to 100 ⁇ m, 1 to 50 ⁇ m, or 1 to 40 ⁇ m from the viewpoint of improving the packing property with the white pigment.
- the inorganic filler may contain inorganic hollow particles having a central particle size of 1 to 25 ⁇ m in order to further improve the grindability of the thermosetting resin composition.
- Inorganic hollow particles are particles having voids inside. Since the inorganic hollow particles refract and reflect incident light on the surface and inner wall, a cured product having further improved light reflectivity and mechanical properties can be formed by using it in combination with a white pigment.
- the inorganic hollow particles include sodium silicate glass, aluminum silicate glass, sodium borosilicate glass and shirasu (white sand).
- the outer shell of the inorganic hollow particles is at least one selected from the group consisting of soda glass silicate, glass aluminum silicate, soda borosilicate glass, silas, crosslinked styrene resin and crosslinked acrylic resin. It is preferably composed of seed materials, and more preferably composed of at least one material selected from the group consisting of soda glass silicate, glass aluminum silicate, soda borosilicate glass and silas.
- the central particle size of the inorganic hollow particles may be 1 ⁇ m or more, 5 ⁇ m or more, or 10 ⁇ m or more. Further, the central particle size of the inorganic hollow particles may be 25 ⁇ m or less or 22 ⁇ m or less because the light reflection characteristics of the formed cured product can be easily improved.
- the thickness of the outer shell of the inorganic hollow particles is 0.4 to 1.3 ⁇ m, 0.45 to 1.2 ⁇ m, 0.5 to 1.1 ⁇ m, in order to improve the mechanical properties of the thermosetting resin composition. Alternatively, it may be 0.55 to 1.0 ⁇ m.
- the bulk density of the inorganic hollow particles is 0.20 to 0.36 g / cm 3 , 0.25 to 0.35 g / cm 3 , or 0.26 to 0.34 g / cm 3. It may be.
- the bulk density is a density calculated by filling a container having a certain volume with inorganic hollow particles and using the internal volume as the volume.
- the true density of inorganic hollow particles is 0.40 to 0.75 g / cm 3 , 0.45 to 0.70 g / cm 3 , or 0.50 to 0.50. It may be 0.65 g / cm 3.
- the true density can be measured according to ASTM D2840.
- the pressure resistance strength of the inorganic hollow particles may be 100 MPa or more, 110 MPa or more, 125 MPa or more, or 150 MPa or more at 25 ° C. In order to improve the moldability of the thermosetting resin composition, the pressure resistance strength of the inorganic hollow particles may be 500 MPa or less, 300 MPa or less, or 200 MPa or less at 25 ° C.
- the pressure resistance can be measured according to ASTM D3102.
- the content of the inorganic hollow particles is preferably 60 to 200 parts by mass, more preferably 80 to 180 parts by mass with respect to 100 parts by mass of the epoxy resin. It is more preferably 100 to 170 parts by mass.
- the mold release agent according to the present embodiment includes a zinc-based metal soap and an aluminum-based metal soap.
- Zinc-based metal soap is a metal salt of zinc and long-chain fatty acids.
- Aluminum-based metal soap is a metal salt of aluminum and long chain fatty acids.
- the carbon number of the long chain fatty acid may be 10 or more, 14 or more, 18 or more, or 20 or more. From the viewpoint of uniformly dispersing in the resin composition, the carbon number of the long chain fatty acid may be 40 or less, 36 or less, 30 or less, or 26 or less.
- long chain fatty acids include lauric acid, myristic acid, palmitic acid, stearic acid, behenic acid, arachidic acid, lignoceric acid, cerotic acid and montanic acid.
- the zinc-based metal soap may contain a metal salt of zinc and a long-chain fatty acid having 10 or more carbon atoms.
- the carbon number of the long chain fatty acid constituting the zinc-based metal soap is preferably 14 or more, more preferably 18 or more, and further preferably 20 or more.
- Aluminum-based metal soap may contain aluminum and long-chain fatty acids having 10 or more carbon atoms.
- the carbon number of the long chain fatty acid constituting the aluminum-based metal soap is preferably 14 or more, more preferably 16 or more, and further preferably 18 or more.
- the content of the release agent (total amount of zinc-based metal soap and aluminum-based metal soap) in the thermosetting resin composition is 1 to 15 parts by mass and 2 to 10 parts by mass with respect to 100 parts by mass of the epoxy resin. Alternatively, it may be 3 to 8 parts by mass.
- the thermosetting resin composition according to the present embodiment may contain a curing accelerator in order to accelerate the curing reaction of the epoxy resin.
- a curing accelerator include amine compounds, imidazole compounds, organophosphorus compounds, alkali metal compounds, alkaline earth metal compounds and quaternary ammonium salts.
- amine compounds, imidazole compounds, organophosphorus compounds, alkali metal compounds, alkaline earth metal compounds and quaternary ammonium salts it is preferable to use an amine compound, an imidazole compound or an organic phosphorus compound.
- the curing accelerator may be used alone or in combination of two or more.
- Examples of the amine compound include 1,8-diazabicyclo [5.4.0] undecene-7, triethylenediamine and tri-2,4,6-dimethylaminomethylphenol.
- Examples of the imidazole compound include 2-ethyl-4-methylimidazole.
- Examples of the organophosphorus compound include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o-diethylphosphologithioate, tetra-n-butylphosphonium-tetrafluoroborate and tetra-n. -Butylphosphonium-tetraphenylborate can be mentioned.
- the content of the curing accelerator in the thermosetting resin composition is 0.01 to 8 parts by mass, 0.1 to 5 parts by mass, or 0.3 to 4 parts by mass with respect to 100 parts by mass of the epoxy resin. It may be there.
- the content of the curing accelerator is 0.01 parts by mass or more, a sufficient curing promoting effect can be easily obtained, and when it is 8 parts by mass or less, discoloration of the cured product can be easily suppressed.
- a coupling agent may be added to the thermosetting resin composition in order to improve the adhesion between the inorganic filler and the epoxy resin.
- the coupling agent is not particularly limited, and examples thereof include a silane coupling agent and a titanate-based coupling agent.
- examples of the silane coupling agent include epoxysilane compounds, aminosilane compounds, thionicsilane compounds, vinylsilane compounds, acrylicsilane compounds and mercaptosilane compounds.
- the content of the coupling agent may be 5% by mass or less based on the total amount of the thermosetting resin composition.
- Additives such as an antioxidant, an ion scavenger, and a wax dispersant may be added to the thermosetting resin composition according to the present embodiment, if necessary.
- thermosetting resin composition according to the present embodiment can be produced by uniformly dispersing and mixing the various components described above.
- the manufacturing means, conditions, etc. are not particularly limited.
- a general method for producing a thermosetting resin composition a method of kneading each component with a kneader, a roll, an extruder, a rake machine, or a planetary mixer that combines rotation and revolution can be mentioned. ..
- kneading each component it is preferable to knead each component in a molten state from the viewpoint of improving dispersibility.
- the kneading conditions may be appropriately determined depending on the type or blending amount of each component. For example, kneading at 15 to 100 ° C. for 5 to 40 minutes is preferable, and kneading at 20 to 100 ° C. for 10 to 30 minutes is more preferable. preferable.
- the kneading temperature is 15 ° C. or higher, each component can be easily kneaded and the dispersibility can be improved.
- the kneading temperature is 100 ° C. or lower, it is possible to prevent the epoxy resin from being cured due to the progress of high molecular weight of the epoxy resin during kneading.
- the kneading time is 5 minutes or more, a sufficient dispersion effect can be easily obtained.
- the kneading time is 40 minutes or less, it is possible to prevent the epoxy resin from being cured due to the progress of high molecular weight of the epoxy resin during kneading.
- thermosetting resin composition according to the present embodiment includes a substrate material for mounting an optical semiconductor device, an electrically insulating material, an optical semiconductor encapsulating material, an adhesive material, a coating material, and transfer molding, which require high light reflectivity and heat resistance. It is useful in various applications such as epoxy resin molding materials.
- thermosetting resin composition according to the present embodiment as an epoxy resin molding material for transfer molding will be described.
- the flow distance (spiral flow) when the thermosetting resin composition according to the present embodiment is transfer-molded under the conditions of a molding mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds is filled in the mold. From the viewpoint of ensuring the property, it may be 60 to 200 cm, 80 to 180 cm, or 100 to 160 cm.
- the initial light reflectance of the cured product of the thermosetting resin composition according to the present embodiment at a wavelength of 460 nm is preferably 93.0% or more, preferably 93.5%. The above is more preferable.
- the light reflectance at a wavelength of 460 nm after heat-treating the cured product at 150 ° C. for 168 hours is preferably 91.0% or more, preferably 91.2% or more. Is more preferable.
- the substrate for mounting an optical semiconductor element of the present embodiment has a recess formed by a bottom surface and a wall surface.
- the bottom surface of the recess is an optical semiconductor device mounting portion (optical semiconductor device mounting region), and at least a part of the wall surface of the recess, that is, the inner peripheral side surface of the recess is a cured product of the thermosetting resin composition for light reflection of the present embodiment. It consists of.
- FIG. 1 is a perspective view showing an embodiment of a substrate for mounting an optical semiconductor element.
- the substrate 110 for mounting an optical semiconductor element has a metal wiring 105 (first connection terminal and second connection terminal) formed with Ni / Ag plating 104 and a metal wiring 105 (first connection terminal and second connection).
- the metal wiring 105 provided with the insulating resin molded body 103'provided between the terminals) and the reflector 103, and formed with Ni / Ag plating 104, and the insulating resin molded body 103'and the reflector 103. It has an optical semiconductor element mounting region (recess) 200.
- the bottom surface of the recess 200 is composed of a metal wiring 105 on which Ni / Ag plating 104 is formed and an insulating resin molded body 103', and the wall surface of the recess 200 is composed of a reflector 103.
- the reflector 103 and the insulating resin molded body 103' are a molded body made of a cured product of the thermosetting resin composition for light reflection according to the above-described embodiment.
- FIG. 2 is a schematic view showing an embodiment of a process of manufacturing a substrate for mounting an optical semiconductor element.
- a step of forming a metal wiring 105 by a known method such as punching from a metal foil and etching, and applying Ni / Ag plating 104 by electroplating ((a) in FIG.
- the bottom surface of the recess 200 is made of a metal wiring 105 as a first connection terminal, a metal wiring 105 as a second connection terminal, and a cured product of a thermosetting resin composition for light reflection provided between them. It is composed of an insulating resin molded body 103'.
- the conditions for the transfer molding are a mold temperature of 170 to 200 ° C., more preferably 170 to 190 ° C., a molding pressure of 0.5 to 20 MPa, more preferably 2 to 8 MPa, and an aftercure temperature for 60 to 120 seconds. It is preferably 120 ° C. to 180 ° C. for 1 to 3 hours.
- the optical semiconductor device includes the optical semiconductor element mounting substrate and the optical semiconductor element mounted on the optical semiconductor element mounting substrate.
- the substrate for mounting the optical semiconductor element the optical semiconductor element provided in the recess of the substrate for mounting the optical semiconductor element, and the phosphor-containing seal that fills the recess and seals the optical semiconductor element.
- An optical semiconductor device including a stop resin portion can be mentioned.
- FIG. 3 is a perspective view showing an embodiment in which the optical semiconductor element 100 is mounted on the optical semiconductor element mounting substrate 110.
- the optical semiconductor element 100 is mounted at a predetermined position in the optical semiconductor element mounting region (recess) 200 of the optical semiconductor element mounting substrate 110, and is electrically connected to the metal wiring 105 by the bonding wire 102.
- To. 4 and 5 are schematic cross-sectional views showing an embodiment of an optical semiconductor device.
- the optical semiconductor device includes an optical semiconductor element mounting substrate 110, an optical semiconductor element 100 provided at a predetermined position in the recess 200 of the optical semiconductor element mounting substrate 110, and the recess 200.
- the metal wiring is provided with a sealing resin portion made of a transparent sealing resin 101 containing a phosphor 106 for sealing the optical semiconductor element, and the optical semiconductor element 100 and the Ni / Ag plating 104 are formed.
- the 105 is electrically connected to the bonding wire 102 or the solder bump 107.
- FIG. 6 is also a schematic cross-sectional view showing an embodiment of an optical semiconductor device.
- the LED element 300 is arranged at a predetermined position on the lead 304 on which the reflector 303 is formed via the die bonding material 306, and the LED element 300 and the lead 304 are electrically connected by the bonding wire 301.
- the LED element 300 is sealed by the transparent sealing resin 302 which is connected and contains the phosphor 305.
- thermosetting resin composition for light reflection The following components were prepared in order to prepare the thermosetting resin compositions of Examples and Comparative Examples.
- each component was compounded, sufficiently kneaded with a mixer, and then melt-kneaded at 40 ° C. for 15 minutes with a mixing roll to obtain a kneaded product.
- the thermosetting resin compositions of Examples and Comparative Examples were prepared by cooling and pulverizing the kneaded product.
- thermosetting resin composition is transferred under the conditions of a molding mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds. did.
- the flow distance (cm) of the thermosetting resin composition during transfer molding was measured.
- thermosetting resin composition is transfer-molded under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds, and then post-cured at 150 ° C. for 2 hours to test a thickness of 3.0 mm. Pieces were made.
- the light reflectance of the test piece at a wavelength of 460 nm was measured using an integrating sphere spectrophotometer V-750 (manufactured by JASCO Corporation).
- thermosetting resin composition was poured into a mold for measuring shear release force (see FIG. 7) and molded.
- the molding conditions were a molding mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds.
- the shear release force measuring die 400 is composed of an upper die 410 and a lower die 416, and the upper die 410 has a resin injection port 412 and a disk having a diameter of 20 mm and a thickness of 2 mm. It is provided with a recess 414 for molding a shaped molded product.
- a chrome-plated stainless steel plate 420 having a length of 50 mm, a width of 35 mm, and a thickness of 0.4 mm is inserted into a die 400 for measuring shear release force, and a thermosetting resin composition is formed on the stainless steel plate 420.
- the plate 420 was pulled out, and the maximum pulling force at that time was measured using a push-pull gauge (manufactured by Imada Seisakusho Co., Ltd., model name "SH").
- thermosetting resin composition was repeatedly molded using the same stainless steel plate, and the shear release force was measured.
- Tables 1 and 2 show the number of shots at which the shear release force was 0 MPa.
- thermosetting resin composition for light reflection of the examples is excellent in mold releasability and heat resistance.
- Optical semiconductor device 101 ... Encapsulating resin, 102 ... Bonding wire, 103 ... Reflector, 103'... Insulating resin molded body, 104 ... Ni / Ag plating, 105 ... Metal wiring, 106 ... Phosphor, 107 ... Solder Bump, 110 ... Optical semiconductor device mounting substrate, 150 ... Resin injection port, 151 ... Mold, 200 ... Optical semiconductor device mounting area, 300 ... LED element, 301 ... Bonding wire, 302 ... Encapsulating resin, 303 ... Reflector, 304 ... lead, 305 ... phosphor, 306 ... die bonding material, 400 ... shear release force measuring mold, 410 ... upper mold, 412 ... resin injection port, 414 ... recess, 416 ... lower mold, 420 ... stainless plate.
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Abstract
A thermosetting resin composition for light reflection according to the present disclosure comprises an epoxy resin, a curing agent, an inorganic filler, a white pigment, and a mold-releasing agent, wherein the mold-releasing agent includes a zinc-based metal soap and an aluminum-based metal soap.
Description
本発明は、光反射用熱硬化性樹脂組成物、光半導体素子搭載用基板及び光半導体装置に関する。
The present invention relates to a thermosetting resin composition for light reflection, a substrate for mounting an optical semiconductor element, and an optical semiconductor device.
ＬＥＤ（Ｌｉｇｈｔ Ｅｍｉｔｔｉｎｇ Ｄｉｏｄｅ：発光ダイオード）等の光半導体素子と蛍光体とを組み合わせた光半導体装置は、エネルギー効率が高く、寿命が長いことから、屋外用ディスプレイ、携帯液晶バックライト、車載用途等の様々な用途に使用され、その需要が拡大している。これに伴い、ＬＥＤデバイスの高輝度化が進んでおり、素子の発熱量増大によるジャンクション温度の上昇、又は、直接的な光エネルギーの増大による光半導体装置の劣化を防ぐことが求められている。
Optical semiconductor devices that combine optical semiconductor elements such as LEDs (Light Emitting Diodes) with phosphors have high energy efficiency and long life, so they are used for outdoor displays, portable liquid crystal backlights, in-vehicle applications, etc. It is used for various purposes and its demand is expanding. Along with this, the brightness of LED devices is increasing, and it is required to prevent the junction temperature from rising due to an increase in the amount of heat generated by the element or the deterioration of the optical semiconductor device due to a direct increase in light energy.
特許文献１には、硬化剤として酸無水物を含む熱硬化性樹脂組成物を、リフレクターの材料として用いた光半導体素子搭載用基板が開示されている。
Patent Document 1 discloses a substrate for mounting an optical semiconductor device using a thermosetting resin composition containing an acid anhydride as a curing agent as a material for a reflector.
一般に、熱硬化性樹脂組成物を用いてＬＥＤのリフレクターを形成する際には、トランスファーモールド成形が用いられている。熱硬化性樹脂組成物には、生産性の観点から成形金型からの離型性に優れることが求められる。そして、熱硬化性樹脂組成物から形成される硬化物には、光反射率をより高めるだけでなく、高温下で長時間使用された際にも光学特性を維持できる耐熱性が求められる。
Generally, transfer molding is used when forming an LED reflector using a thermosetting resin composition. The thermosetting resin composition is required to have excellent mold releasability from the molding die from the viewpoint of productivity. The cured product formed from the thermosetting resin composition is required to have heat resistance that not only enhances the light reflectance but also maintains the optical characteristics even when used for a long time at a high temperature.
そこで、本発明は、離型性及び耐熱性に優れる光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及び光半導体装置を提供することを目的とする。
Therefore, an object of the present invention is to provide a thermosetting resin composition for light reflection, which is excellent in releasability and heat resistance, a substrate for mounting an optical semiconductor element, and an optical semiconductor device using the same.
本発明は、エポキシ樹脂、硬化剤、無機充填剤、白色顔料及び離型剤を含有し、離型剤が、亜鉛系金属石鹸とアルミニウム系金属石鹸とを含む、光反射用熱硬化性樹脂組成物に関する。
The present invention contains a thermosetting resin composition for light reflection, which contains an epoxy resin, a curing agent, an inorganic filler, a white pigment and a mold release agent, and the mold release agent contains a zinc-based metal soap and an aluminum-based metal soap. Regarding things.
亜鉛系金属石鹸が、亜鉛と炭素数が１０以上の長鎖脂肪酸との金属塩を含んでよい。また、長鎖脂肪酸の炭素数は、２０以上であってよい。
The zinc-based metal soap may contain a metal salt of zinc and a long-chain fatty acid having 10 or more carbon atoms. The carbon number of the long chain fatty acid may be 20 or more.
硬化剤は、融点が１８０～４００℃のテトラカルボン酸二無水物を含んでよい。無機充填剤は、中心粒径が１～２５μｍの無機中空粒子を含んでよい。
The curing agent may contain a tetracarboxylic dianhydride having a melting point of 180 to 400 ° C. The inorganic filler may contain inorganic hollow particles having a central particle size of 1 to 25 μm.
別の側面において、本発明は、上記光反射用熱硬化性樹脂組成物の硬化物を備える光半導体素子搭載用基板に関する。本発明に係る光半導体素子搭載用基板は、底面及び壁面から構成される凹部を有し、当該凹部の底面が光半導体素子の搭載部であってよい。この場合、凹部の壁面の少なくとも一部が、上記光反射用熱硬化性樹脂組成物の硬化物である。また、本発明に係る光半導体素子搭載用基板は、基板と、当該基板上に設けられた第１の接続端子及び第２の接続端子と、第１の接続端子と第２の接続端子との間に設けられた、上記光反射用熱硬化性樹脂組成物の硬化物と、を備えてよい。
In another aspect, the present invention relates to a substrate for mounting an optical semiconductor device, which comprises a cured product of the thermosetting resin composition for light reflection. The substrate for mounting an optical semiconductor element according to the present invention has a recess composed of a bottom surface and a wall surface, and the bottom surface of the recess may be a mounting portion for the optical semiconductor element. In this case, at least a part of the wall surface of the recess is a cured product of the thermosetting resin composition for light reflection. Further, the substrate for mounting an optical semiconductor element according to the present invention includes a substrate, a first connection terminal and a second connection terminal provided on the substrate, and a first connection terminal and a second connection terminal. A cured product of the thermosetting resin composition for light reflection provided between them may be provided.
さらに別の側面において、本発明は、上記光半導体素子搭載用基板と、該光半導体素子搭載用基板に搭載された光半導体素子とを有する光半導体装置に関する。
In yet another aspect, the present invention relates to an optical semiconductor device having the above-mentioned optical semiconductor element mounting substrate and an optical semiconductor element mounted on the optical semiconductor element mounting substrate.
本発明によれば、離型性及び耐熱性に優れる光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及び光半導体装置を提供することができる。
According to the present invention, it is possible to provide a thermosetting resin composition for light reflection, which is excellent in releasability and heat resistance, a substrate for mounting an optical semiconductor element, and an optical semiconductor device using the same.
以下、必要に応じて図面を参照しつつ、本発明の好適な実施形態について詳細に説明する。ただし、本発明は以下の実施形態に限定されない。なお、図面中、同一要素には同一符号を付すこととし、重複する説明は省略する。また、上下左右等の位置関係は、特に断らない限り、図面に示す位置関係に基づくものとする。更に、図面の寸法比率は図示の比率に限られない。
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary. However, the present invention is not limited to the following embodiments. In the drawings, the same elements are designated by the same reference numerals, and duplicate description will be omitted. Further, unless otherwise specified, the positional relationship such as up, down, left, and right shall be based on the positional relationship shown in the drawings. Furthermore, the dimensional ratios in the drawings are not limited to the ratios shown.
本明細書において、「～」を用いて示された数値範囲は、「～」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。本明細書に段階的に記載されている数値範囲において、ある段階の数値範囲の上限値又は下限値は、他の段階の数値範囲の上限値又は下限値に置き換えてもよい。本明細書に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。「Ａ又はＢ」とは、Ａ及びＢのどちらか一方を含んでいればよく、両方とも含んでいてもよい。本明細書に例示する材料は、特に断らない限り、１種を単独で又は２種以上を組み合わせて用いることができる。また、本明細書において、（メタ）アクリレートとは、アクリレート及びそれに対応するメタクリレートの少なくとも一方を意味する。
In the present specification, the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively. In the numerical range described stepwise in the present specification, the upper limit value or the lower limit value of the numerical range of one step may be replaced with the upper limit value or the lower limit value of the numerical range of another step. In the numerical range described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples. “A or B” may include either A or B, or both. Unless otherwise specified, the materials exemplified in the present specification may be used alone or in combination of two or more. Further, in the present specification, (meth) acrylate means at least one of acrylate and the corresponding methacrylate.
［光反射用熱硬化性樹脂組成物］
本実施形態の光反射用熱硬化性樹脂組成物は、エポキシ樹脂、硬化剤、無機充填剤及び白色顔料を含有し、離型剤は、亜鉛系金属石鹸とアルミニウム系金属石鹸とを含んでいる。 [Thermosetting resin composition for light reflection]
The thermosetting resin composition for light reflection of the present embodiment contains an epoxy resin, a curing agent, an inorganic filler and a white pigment, and the release agent contains a zinc-based metal soap and an aluminum-based metal soap. ..
本実施形態の光反射用熱硬化性樹脂組成物は、エポキシ樹脂、硬化剤、無機充填剤及び白色顔料を含有し、離型剤は、亜鉛系金属石鹸とアルミニウム系金属石鹸とを含んでいる。 [Thermosetting resin composition for light reflection]
The thermosetting resin composition for light reflection of the present embodiment contains an epoxy resin, a curing agent, an inorganic filler and a white pigment, and the release agent contains a zinc-based metal soap and an aluminum-based metal soap. ..
（エポキシ樹脂）
エポキシ樹脂としては、電子部品封止用エポキシ樹脂成形材料で一般に使用されているエポキシ樹脂を用いることができる。本実施形態に係る熱硬化性樹脂組成物は、エポキシ樹脂を含有することで、熱時硬度及び曲げ強度が高く、機械的特性を向上した硬化物を形成することができる。エポキシ樹脂として、例えば、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂等のフェノール類とアルデヒド類のノボラック樹脂をエポキシ化したエポキシ樹脂；ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＳ、アルキル置換ビスフェノール等のジグリシジルエーテル；ジアミノジフェニルメタン、イソシアヌル酸等のポリアミンとエピクロルヒドリンとの反応により得られるグリシジルアミン型エポキシ樹脂；オレフィン結合を過酢酸等の過酸で酸化して得られる線状脂肪族エポキシ樹脂；及び脂環族エポキシ樹脂が挙げられる。エポキシ樹脂は、１種を単独で又は２種以上を組み合わせて用いてもよい。 (Epoxy resin)
As the epoxy resin, an epoxy resin generally used in an epoxy resin molding material for encapsulating electronic parts can be used. Since the thermosetting resin composition according to the present embodiment contains an epoxy resin, it is possible to form a cured product having high thermal hardness and bending strength and improved mechanical properties. As the epoxy resin, for example, an epoxy resin obtained by epoxidizing phenols such as phenol novolac type epoxy resin and orthocresol novolac type epoxy resin and novolak resin of aldehydes; bisphenol A, bisphenol F, bisphenol S, alkyl-substituted bisphenol and the like. Glysidyl ether; Glysidylamine type epoxy resin obtained by reacting polyamines such as diaminodiphenylmethane and isocyanuric acid with epichlorohydrin; Linear aliphatic epoxy resin obtained by oxidizing olefin bonds with a peracid such as peracetic acid; and alicyclic Group epoxy resin can be mentioned. The epoxy resin may be used alone or in combination of two or more.
エポキシ樹脂としては、電子部品封止用エポキシ樹脂成形材料で一般に使用されているエポキシ樹脂を用いることができる。本実施形態に係る熱硬化性樹脂組成物は、エポキシ樹脂を含有することで、熱時硬度及び曲げ強度が高く、機械的特性を向上した硬化物を形成することができる。エポキシ樹脂として、例えば、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂等のフェノール類とアルデヒド類のノボラック樹脂をエポキシ化したエポキシ樹脂；ビスフェノールＡ、ビスフェノールＦ、ビスフェノールＳ、アルキル置換ビスフェノール等のジグリシジルエーテル；ジアミノジフェニルメタン、イソシアヌル酸等のポリアミンとエピクロルヒドリンとの反応により得られるグリシジルアミン型エポキシ樹脂；オレフィン結合を過酢酸等の過酸で酸化して得られる線状脂肪族エポキシ樹脂；及び脂環族エポキシ樹脂が挙げられる。エポキシ樹脂は、１種を単独で又は２種以上を組み合わせて用いてもよい。 (Epoxy resin)
As the epoxy resin, an epoxy resin generally used in an epoxy resin molding material for encapsulating electronic parts can be used. Since the thermosetting resin composition according to the present embodiment contains an epoxy resin, it is possible to form a cured product having high thermal hardness and bending strength and improved mechanical properties. As the epoxy resin, for example, an epoxy resin obtained by epoxidizing phenols such as phenol novolac type epoxy resin and orthocresol novolac type epoxy resin and novolak resin of aldehydes; bisphenol A, bisphenol F, bisphenol S, alkyl-substituted bisphenol and the like. Glysidyl ether; Glysidylamine type epoxy resin obtained by reacting polyamines such as diaminodiphenylmethane and isocyanuric acid with epichlorohydrin; Linear aliphatic epoxy resin obtained by oxidizing olefin bonds with a peracid such as peracetic acid; and alicyclic Group epoxy resin can be mentioned. The epoxy resin may be used alone or in combination of two or more.
着色が少ないことから、エポキシ樹脂は、ジグリシジルイソシアヌレート、トリグリシジルイソシアヌレート、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、１，２－シクロヘキサンジカルボン酸、１，３－シクロヘキサンジカルボン酸又は１，４－シクロヘキサンジカルボン酸から誘導されるジカルボン酸ジグリシジルエステルを含んでよい。同様の理由から、エポキシ樹脂は、フタル酸、テトラヒドロフタル酸、ヘキサヒドロフタル酸、メチルテトラヒドロフタル酸、ナジック酸、メチルナジック酸等のジカルボン酸のジグリシジルエステルも好適である。芳香環が水素化された脂環式構造を有する核水素化トリメリット酸、核水素化ピロメリット酸等のグリシジルエステルを含んでよい。エポキシ樹脂は、シラン化合物を有機溶媒、有機塩基及び水の存在下に加熱して、加水分解して縮合させることにより製造される、エポキシ基を有するポリオルガノシロキサンを含んでもよい。
Since there is little coloring, the epoxy resins are diglycidyl isocyanurate, triglycidyl isocyanurate, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, 1,2-cyclohexanedicarboxylic acid, 1,3-. It may contain a cyclohexanedicarboxylic acid or a dicarboxylic acid diglycidyl ester derived from a 1,4-cyclohexanedicarboxylic acid. For the same reason, as the epoxy resin, diglycidyl esters of dicarboxylic acids such as phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid, methyltetrahydrophthalic acid, nadic acid and methylnadic acid are also suitable. It may contain glycidyl esters such as nuclear hydrogenated trimellitic acid and nuclear hydrogenated pyromellitic acid having an alicyclic structure in which the aromatic ring is hydrogenated. The epoxy resin may contain a polyorganosiloxane having an epoxy group, which is produced by heating a silane compound in the presence of an organic solvent, an organic base and water, hydrolyzing and condensing the silane compound.
エポキシ樹脂は、市販品を使用してもよい。３，４－エポキシシクロヘキシルメチル－３’，４’－エポキシシクロヘキサンカルボキシレートとして、例えば、株式会社ダイセルの製品名「セロキサイド２０２１」、「セロキサイド２０２１Ａ」及び「セロキサイド２０２１Ｐ」、ダウケミカル日本株式会社の製品名「ＥＲＬ４２２１」、「ＥＲＬ４２２１Ｄ」及び「ＥＲＬ４２２１Ｅ」を入手できる。ビス（３，４－エポキシシクロヘキシルメチル）アジペートとして、例えば、ダウケミカル日本株式会社の製品名「ＥＲＬ４２９９」、ＤＩＣ株式会社の製品名「ＥＸＡ－７０１５」を入手できる。１－エポキシエチル－３，４－エポキシシクロヘキサン又はリモネンジエポキシドとして、例えば、三菱ケミカル株式会社の製品名「ｊＥＲ ＹＸ８０００」、「ｊＥＲ ＹＸ８０３４」及び「ｊＥＲ ＹＬ７１７０」、株式会社ダイセルの製品名「セロキサイド２０８１」、「セロキサイド３０００」、「エポリードＧＴ３０１」、「エポリードＧＴ４０１」及び「ＥＨＰＥ３１５０」を入手できる。トリスグリシジルイソシアヌレートとしては、例えば、日産化学工業株式会社の製品名「ＴＥＰＩＣ－Ｓ」を入手できる。
A commercially available product may be used as the epoxy resin. As 3,4-epoxycyclohexylmethyl-3', 4'-epoxycyclohexanecarboxylate, for example, the product names of Daicel Co., Ltd. "Selokiside 2021", "Selokiside 2021A" and "Selokiside 2021P", products of Dow Chemical Japan Co., Ltd. The names "ERL4221", "ERL4221D" and "ERL4221E" are available. As the bis (3,4-epoxycyclohexylmethyl) adipate, for example, the product name "ERL4299" of Dow Chemical Japan Co., Ltd. and the product name "EXA-7015" of DIC Corporation can be obtained. As 1-epoxyethyl-3,4-epoxycyclohexane or limonene diepoxide, for example, the product names of Mitsubishi Chemical Co., Ltd. "jER YX8000", "jER YX8034" and "jER YL7170", and the product name of Daicel Co., Ltd. "Selokiside 2081" , "Selokiside 3000", "Epoxy GT301", "Epoxy GT401" and "EHPE3150" are available. As the trisglycidyl isocyanurate, for example, the product name "TEPIC-S" of Nissan Chemical Industries, Ltd. can be obtained.
（硬化剤）
硬化剤としては、電子部品封止用エポキシ樹脂成形材料で一般に使用されている硬化剤を用いることができる。硬化剤は、エポキシ樹脂と反応して硬化物が得られるものであれば、特に限定されないが、着色の少ない硬化剤が好ましく、無色又は淡黄色の硬化剤がより好ましい。硬化剤としては、例えば、酸無水物系硬化剤、イソシアヌル酸誘導体系硬化剤及びフェノール系硬化剤が挙げられる。硬化剤は、１種を単独で又は２種以上を組み合わせて用いてもよい。 (Hardener)
As the curing agent, a curing agent generally used in epoxy resin molding materials for encapsulating electronic components can be used. The curing agent is not particularly limited as long as it can react with an epoxy resin to obtain a cured product, but a curing agent with less coloring is preferable, and a colorless or pale yellow curing agent is more preferable. Examples of the curing agent include an acid anhydride-based curing agent, an isocyanuric acid derivative-based curing agent, and a phenol-based curing agent. The curing agent may be used alone or in combination of two or more.
硬化剤としては、電子部品封止用エポキシ樹脂成形材料で一般に使用されている硬化剤を用いることができる。硬化剤は、エポキシ樹脂と反応して硬化物が得られるものであれば、特に限定されないが、着色の少ない硬化剤が好ましく、無色又は淡黄色の硬化剤がより好ましい。硬化剤としては、例えば、酸無水物系硬化剤、イソシアヌル酸誘導体系硬化剤及びフェノール系硬化剤が挙げられる。硬化剤は、１種を単独で又は２種以上を組み合わせて用いてもよい。 (Hardener)
As the curing agent, a curing agent generally used in epoxy resin molding materials for encapsulating electronic components can be used. The curing agent is not particularly limited as long as it can react with an epoxy resin to obtain a cured product, but a curing agent with less coloring is preferable, and a colorless or pale yellow curing agent is more preferable. Examples of the curing agent include an acid anhydride-based curing agent, an isocyanuric acid derivative-based curing agent, and a phenol-based curing agent. The curing agent may be used alone or in combination of two or more.
本実施形態に係る硬化剤は、酸無水物系硬化剤として、融点が１８０～４００℃のテトラカルボン酸二無水物（以下、単に「テトラカルボン酸二無水物」という場合がある。）を含んでよい。このようなテトラカルボン酸二無水物を硬化剤として用いることで、熱硬化性樹脂組成物の耐熱性を更に向上することができる。樹脂組成物中に均一に分散させる点から、テトラカルボン酸二無水物の融点は、２００～３８０℃又は２１０～３５０℃であってもよい。
The curing agent according to the present embodiment contains a tetracarboxylic dianhydride having a melting point of 180 to 400 ° C. (hereinafter, may be simply referred to as "tetracarboxylic dianhydride") as an acid anhydride-based curing agent. It's fine. By using such a tetracarboxylic dianhydride as a curing agent, the heat resistance of the thermosetting resin composition can be further improved. The melting point of the tetracarboxylic dianhydride may be 200 to 380 ° C. or 210 to 350 ° C. from the viewpoint of uniformly dispersing the tetracarboxylic dianhydride in the resin composition.
耐熱性をより一層向上することから、テトラカルボン酸二無水物は、芳香環又は脂環を有してよい。芳香環を有するテトラカルボン酸二無水物は、ベンゼン環を２以上有するテトラカルボン酸二無水物及びナフタレン環を有するテトラカルボン酸二無水物からなる群より選ばれる少なくとも１種であってよい。
The tetracarboxylic dianhydride may have an aromatic ring or an alicyclic ring in order to further improve the heat resistance. The tetracarboxylic dianhydride having an aromatic ring may be at least one selected from the group consisting of a tetracarboxylic dianhydride having two or more benzene rings and a tetracarboxylic dianhydride having a naphthalene ring.
ベンゼン環を２以上有するテトラカルボン酸二無水物は、下記式（１）で表される化合物であってよい。
式（１）中、Ｒは、単結合、エーテル結合、アルキル基、カルボニル基、スルホニル基、ヘキサフルオロイソプロピリデン基、又はフルオレン基を示す。
The tetracarboxylic dianhydride having two or more benzene rings may be a compound represented by the following formula (1).
In formula (1), R represents a single bond, an ether bond, an alkyl group, a carbonyl group, a sulfonyl group, a hexafluoroisopropylidene group, or a fluorene group.
脂環を有するテトラカルボン酸二無水物としては、例えば、１，２，３，４－シクロブタンテトラカルボン酸二無水物が挙げられる。芳香環を有するテトラカルボン酸二無水物としては、例えば、４，４’－ビフタル酸無水物、４，４’－カルボニルジフタル酸無水物、４，４’－スルホニルジフタル酸無水物、４，４’－（ヘキサフルオロイソプロピリデン）ジフタル酸無水物、４，４’－オキシジフタル酸無水物、９，９－ビス（３，４－ジカルボキシフェニル）フルオレン二無水物、及び２，３，６，７－ナフタレンテトラカルボン酸二無水物が挙げられる。
Examples of the tetracarboxylic dianhydride having an alicyclic ring include 1,2,3,4-cyclobutanetetracarboxylic dianhydride. Examples of the tetracarboxylic dianhydride having an aromatic ring include 4,4'-biphthalic anhydride, 4,4'-carbonyldiphthalic anhydride, 4,4'-sulfonyldiphthalic anhydride, and 4 , 4'-(hexafluoroisopropyridene) diphthalic anhydride, 4,4'-oxydiphthalic anhydride, 9,9-bis (3,4-dicarboxyphenyl) fluorene dianhydride, and 2,3,6 , 7-Naphthalenetetracarboxylic dianhydride.
本実施形態に係る硬化剤は、融点が１８０℃未満の酸無水物系硬化剤を含んでよい。融点が１８０℃未満の酸無水物系硬化剤としては、例えば、無水フタル酸、無水マレイン酸、無水トリメリット酸、ヘキサヒドロ無水フタル酸、テトラヒドロ無水フタル酸、無水メチルナジック酸、無水ナジック酸、無水グルタル酸、無水ジメチルグルタル酸、無水ジエチルグルタル酸、無水コハク酸、メチルヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、及び下記式（２）で表されるテトラカルボン酸二無水物が挙げられる。
The curing agent according to the present embodiment may contain an acid anhydride-based curing agent having a melting point of less than 180 ° C. Examples of the acid anhydride-based curing agent having a melting point of less than 180 ° C. include phthalic anhydride, maleic anhydride, trimellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylnadic anhydride, nadic acid anhydride, and anhydrous. Examples thereof include glutaric acid, dimethylglutaric anhydride, diethylglutaric anhydride, succinic anhydride, phthalic anhydride, methyltetrahydrophthalic anhydride, and tetracarboxylic dianhydride represented by the following formula (2).
イソシアヌル酸誘導体としては、例えば、１，３，５－トリス（１－カルボキシメチル）イソシアヌレート、１，３，５－トリス（２－カルボキシエチル）イソシアヌレート、１，３，５－トリス（３－カルボキシプロピル）イソシアヌレート及び１，３－ビス（２－カルボキシエチル）イソシアヌレートが挙げられる。
Examples of the isocyanuric acid derivative include 1,3,5-tris (1-carboxymethyl) isocyanurate, 1,3,5-tris (2-carboxyethyl) isocyanurate, and 1,3,5-tris (3-). Carboxypropyl) isocyanurate and 1,3-bis (2-carboxyethyl) isocyanurate.
フェノール系硬化剤としては、例えば、フェノール、クレゾール、レゾルシン、カテコール、ビスフェノールＡ、ビスフェノールＦ、フェニルフェノール、アミノフェノール等のフェノール類及び／又はα－ナフトール、β－ナフトール、ジヒドロキシナフタレン等のナフトール類と、ホルムアルデヒド、ベンズアルデヒド、サリチルアルデヒド等のアルデヒド類とを酸性触媒下で縮合又は共縮合させて得られる、ノボラック型フェノール樹脂；フェノール類及び／又はナフトール類と、ジメトキシパラキシレン又はビス（メトキシメチル）ビフェニルとから合成されるフェノール・アラルキル樹脂；ビフェニレン型フェノール・アラルキル樹脂、ナフトール・アラルキル樹脂等のアラルキル型フェノール樹脂；フェノール類及び／又はナフトール類と、ジシクロペンタジエンとの共重合によって合成される、ジシクロペンタジエン型フェノール樹脂；トリフェニルメタン型フェノール樹脂；テルペン変性フェノール樹脂；パラキシリレン及び／又はメタキシリレン変性フェノール樹脂；メラミン変性フェノール樹脂；並びにこれら２種以上を共重合して得られるフェノール樹脂が挙げられる。
Examples of the phenolic curing agent include phenols such as phenol, cresol, resorcin, catechol, bisphenol A, bisphenol F, phenylphenol and aminophenol and / or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene. , Formaldehyde, benzaldehyde, salicylaldehyde and other aldehydes are condensed or co-condensed under an acidic catalyst to obtain a novolak-type phenolic resin; phenols and / or naphthols and dimethoxyparaxylene or bis (methoxymethyl) biphenyl. Phenol / aralkyl resin synthesized from; aralkyl-type phenolic resin such as biphenylene-type phenol / aralkyl resin, naphthol / aralkyl resin; dicyclopentadiene synthesized by copolymerization of phenols and / or naphthols with dicyclopentadiene. Cyclopentadiene-type phenolic resins; triphenylmethane-type phenolic resins; terpen-modified phenolic resins; paraxylylene and / or metaxylylene-modified phenolic resins; melamine-modified phenolic resins; and phenolic resins obtained by copolymerizing two or more of these.
本実施形態に係る熱硬化性樹脂組成物において、硬化剤の含有量は、エポキシ樹脂１００質量部に対して、１０～１５０質量部、５０～１３０質量部、又は６０～１２０質量部であってよい。
In the thermosetting resin composition according to the present embodiment, the content of the curing agent is 10 to 150 parts by mass, 50 to 130 parts by mass, or 60 to 120 parts by mass with respect to 100 parts by mass of the epoxy resin. Good.
硬化剤の配合割合は、エポキシ樹脂中のエポキシ基１当量に対して、当該エポキシ基と反応可能な硬化剤中の活性基（酸無水物基又は水酸基）が０．５～２．０当量、０．６～１．５当量、又は０．７～１．２当量であってよい。上記活性基が０．５当量以上であると、熱硬化性樹脂組成物から形成される硬化物のガラス転移温度が高くなり、充分な弾性率が得られ易くなる。一方、上記活性基が２．０当量以下であると、硬化後の強度が低下し難くなる。
The mixing ratio of the curing agent is 0.5 to 2.0 equivalents of the active group (acid anhydride group or hydroxyl group) in the curing agent capable of reacting with the epoxy group with respect to 1 equivalent of the epoxy group in the epoxy resin. It may be 0.6 to 1.5 equivalents or 0.7 to 1.2 equivalents. When the active group is 0.5 equivalent or more, the glass transition temperature of the cured product formed from the thermosetting resin composition becomes high, and a sufficient elastic modulus can be easily obtained. On the other hand, when the active group is 2.0 equivalents or less, the strength after curing is unlikely to decrease.
（白色顔料）
白色顔料は、本実施形態に係る熱硬化性樹脂組成物から得られる硬化物（成形体）に白色系の色調を付与するために用いられ、特にその色調を高度の白色とすることにより、成形体の光反射率を向上させることができる。 (White pigment)
The white pigment is used to impart a white color tone to the cured product (molded product) obtained from the thermosetting resin composition according to the present embodiment, and is particularly molded by making the color tone highly white. The light reflectance of the body can be improved.
白色顔料は、本実施形態に係る熱硬化性樹脂組成物から得られる硬化物（成形体）に白色系の色調を付与するために用いられ、特にその色調を高度の白色とすることにより、成形体の光反射率を向上させることができる。 (White pigment)
The white pigment is used to impart a white color tone to the cured product (molded product) obtained from the thermosetting resin composition according to the present embodiment, and is particularly molded by making the color tone highly white. The light reflectance of the body can be improved.
白色顔料としては、例えば、酸化イットリウム等の希土類酸化物、酸化チタン、酸化亜鉛、酸化アルミニウム（アルミナ）、酸化マグネシウム、酸化アンチモン、硫酸亜鉛、及び酸化ジルコニウムが挙げられる。これらは、１種を単独で又は２種以上を組み合わせて用いてもよい。光反射性をより向上することから、白色顔料は、酸化チタン、酸化亜鉛、アルミナ、酸化マグネシウム、酸化アンチモン及び酸化ジルコニウムからなる群より選ばれる少なくとも１種を含むことが好ましく、酸化チタン、酸化アンチモン及び酸化ジルコニウムからなる群より選ばれる少なくとも１種を含むことがより好ましい。
Examples of the white pigment include rare earth oxides such as yttrium oxide, titanium oxide, zinc oxide, aluminum oxide (alumina), magnesium oxide, antimony oxide, zinc sulfate, and zirconium oxide. These may be used individually by 1 type or in combination of 2 or more type. In order to further improve the light reflectivity, the white pigment preferably contains at least one selected from the group consisting of titanium oxide, zinc oxide, alumina, magnesium oxide, antimony oxide and zirconium oxide, and titanium oxide and antimony oxide. It is more preferable to contain at least one selected from the group consisting of and zirconium oxide.
白色顔料の中心粒径は、０．０５～１０μｍ、０．０８～８μｍ、又は０．１～５μｍであってよい。白色顔料の中心粒径が０．０５μｍ以上であると分散性がより良好になり、１０μｍ未満であると硬化物の光反射特性がより良好になる。本明細書において、中心粒径は、レーザー光回折法による粒度分布測定における質量平均値Ｄ５０（又はメジアン径）として求めることができる。
The central particle size of the white pigment may be 0.05 to 10 μm, 0.08 to 8 μm, or 0.1 to 5 μm. When the central particle size of the white pigment is 0.05 μm or more, the dispersibility becomes better, and when it is less than 10 μm, the light reflection characteristic of the cured product becomes better. In the present specification, the central particle size can be determined as the mass average value D50 (or median diameter) in the particle size distribution measurement by the laser light diffraction method.
（無機充填剤）
本実施形態に係る熱硬化性樹脂組成物は、成形性を向上する観点から、無機充填剤を含有する。無機充填剤としては、例えば、石英、ヒュームドシリカ、沈降性シリカ、無水ケイ酸、溶融シリカ、結晶性シリカ、超微粉無定型シリカ、硫酸バリウム、炭酸マグネシウム、炭酸バリウム、水酸化アルミニウム、水酸化マグネシウム、チタン酸カリウム、ケイ酸カルシウム、及び無機中空粒子が挙げられる。 (Inorganic filler)
The thermosetting resin composition according to the present embodiment contains an inorganic filler from the viewpoint of improving moldability. Examples of the inorganic filler include quartz, fumed silica, precipitated silica, silicic anhydride, fused silica, crystalline silica, ultrafine atypical silica, barium sulfate, magnesium carbonate, barium carbonate, aluminum hydroxide, and hydroxide. Examples include magnesium, potassium titanate, calcium silicate, and inorganic hollow particles.
本実施形態に係る熱硬化性樹脂組成物は、成形性を向上する観点から、無機充填剤を含有する。無機充填剤としては、例えば、石英、ヒュームドシリカ、沈降性シリカ、無水ケイ酸、溶融シリカ、結晶性シリカ、超微粉無定型シリカ、硫酸バリウム、炭酸マグネシウム、炭酸バリウム、水酸化アルミニウム、水酸化マグネシウム、チタン酸カリウム、ケイ酸カルシウム、及び無機中空粒子が挙げられる。 (Inorganic filler)
The thermosetting resin composition according to the present embodiment contains an inorganic filler from the viewpoint of improving moldability. Examples of the inorganic filler include quartz, fumed silica, precipitated silica, silicic anhydride, fused silica, crystalline silica, ultrafine atypical silica, barium sulfate, magnesium carbonate, barium carbonate, aluminum hydroxide, and hydroxide. Examples include magnesium, potassium titanate, calcium silicate, and inorganic hollow particles.
成形性の点から、無機充填剤は溶融シリカを含んでよい。溶融シリカの中心粒径は、白色顔料とのパッキング性を向上させる観点から、１～１００μｍ、１～５０μｍ、又は１～４０μｍであってよい。
From the viewpoint of moldability, the inorganic filler may contain fused silica. The central particle size of the molten silica may be 1 to 100 μm, 1 to 50 μm, or 1 to 40 μm from the viewpoint of improving the packing property with the white pigment.
熱硬化性樹脂組成物の粉砕性をより向上することから、無機充填剤は、中心粒径が１～２５μｍの無機中空粒子を含んでよい。無機中空粒子は、内部に空隙部を有する粒子である。無機中空粒子は、入射光を表面及び内壁で屈折及び反射するため、白色顔料と併用することで、光反射性及び機械的特性をより一層向上した硬化物を形成することができる。
The inorganic filler may contain inorganic hollow particles having a central particle size of 1 to 25 μm in order to further improve the grindability of the thermosetting resin composition. Inorganic hollow particles are particles having voids inside. Since the inorganic hollow particles refract and reflect incident light on the surface and inner wall, a cured product having further improved light reflectivity and mechanical properties can be formed by using it in combination with a white pigment.
無機中空粒子としては、例えば、珪酸ソーダガラス、アルミ珪酸ガラス、硼珪酸ソーダガラス及びシラス（白砂）が挙げられる。耐熱性及び耐圧強度の観点からは、無機中空粒子の外殻は、珪酸ソーダガラス、アルミ珪酸ガラス、硼珪酸ソーダガラス、シラス、架橋スチレン系樹脂及び架橋アクリル系樹脂からなる群より選ばれる少なくとも１種の材質から構成されることが好ましく、珪酸ソーダガラス、アルミ珪酸ガラス、硼珪酸ソーダガラス及びシラスからなる群より選ばれる少なくとも１種の材質から構成されることがより好ましい。
Examples of the inorganic hollow particles include sodium silicate glass, aluminum silicate glass, sodium borosilicate glass and shirasu (white sand). From the viewpoint of heat resistance and pressure resistance, the outer shell of the inorganic hollow particles is at least one selected from the group consisting of soda glass silicate, glass aluminum silicate, soda borosilicate glass, silas, crosslinked styrene resin and crosslinked acrylic resin. It is preferably composed of seed materials, and more preferably composed of at least one material selected from the group consisting of soda glass silicate, glass aluminum silicate, soda borosilicate glass and silas.
熱硬化性樹脂組成物を調製する際に無機中空粒子を均一に分散し易いことから、無機中空粒子の中心粒径は、１μｍ以上、５μｍ以上又は１０μｍ以上であってよい。また、形成される硬化物の光反射特性を向上し易いことから、無機中空粒子の中心粒径は、２５μｍ以下又は２２μｍ以下であってよい。
Since it is easy to uniformly disperse the inorganic hollow particles when preparing the thermosetting resin composition, the central particle size of the inorganic hollow particles may be 1 μm or more, 5 μm or more, or 10 μm or more. Further, the central particle size of the inorganic hollow particles may be 25 μm or less or 22 μm or less because the light reflection characteristics of the formed cured product can be easily improved.
熱硬化性樹脂組成物の機械的特性を向上することから、無機中空粒子の外殻の厚みは、０．４～１．３μｍ、０．４５～１．２μｍ、０．５～１．１μｍ、又は０．５５～１．０μｍであってよい。
The thickness of the outer shell of the inorganic hollow particles is 0.4 to 1.3 μm, 0.45 to 1.2 μm, 0.5 to 1.1 μm, in order to improve the mechanical properties of the thermosetting resin composition. Alternatively, it may be 0.55 to 1.0 μm.
光反射性を向上することから、無機中空粒子のかさ密度は、０．２０～０．３６ｇ／ｃｍ３、０．２５～０．３５ｇ／ｃｍ３、又は０．２６～０．３４ｇ／ｃｍ３であってよい。かさ密度は、ある容積の容器に無機中空粒子を充填し、その内容積を体積として算出した密度である。
In order to improve the light reflectivity, the bulk density of the inorganic hollow particles is 0.20 to 0.36 g / cm 3 , 0.25 to 0.35 g / cm 3 , or 0.26 to 0.34 g / cm 3. It may be. The bulk density is a density calculated by filling a container having a certain volume with inorganic hollow particles and using the internal volume as the volume.
光反射性と機械的特性とのバランスに優れることから、無機中空粒子の真密度は、０．４０～０．７５ｇ／ｃｍ３、０．４５～０．７０ｇ／ｃｍ３、又は０．５０～０．６５ｇ／ｃｍ３であってよい。真密度は、ＡＳＴＭ Ｄ２８４０に準拠して測定することができる。
Due to the excellent balance between light reflectivity and mechanical properties, the true density of inorganic hollow particles is 0.40 to 0.75 g / cm 3 , 0.45 to 0.70 g / cm 3 , or 0.50 to 0.50. It may be 0.65 g / cm 3. The true density can be measured according to ASTM D2840.
熱硬化性樹脂組成物の硬化物の強度を向上することから、無機中空粒子の耐圧強度は、２５℃で１００ＭＰａ以上、１１０ＭＰａ以上、１２５ＭＰａ以上、又は１５０ＭＰａ以上であってよい。熱硬化性樹脂組成物の成形性を向上することから、無機中空粒子の耐圧強度は、２５℃で５００ＭＰａ以下、３００ＭＰａ以下、又は２００ＭＰａ以下であってよい。耐圧強度は、ＡＳＴＭ Ｄ３１０２に準拠して測定することができる。
In order to improve the strength of the cured product of the thermosetting resin composition, the pressure resistance strength of the inorganic hollow particles may be 100 MPa or more, 110 MPa or more, 125 MPa or more, or 150 MPa or more at 25 ° C. In order to improve the moldability of the thermosetting resin composition, the pressure resistance strength of the inorganic hollow particles may be 500 MPa or less, 300 MPa or less, or 200 MPa or less at 25 ° C. The pressure resistance can be measured according to ASTM D3102.
光反射率をより向上させる点から、無機中空粒子の含有量は、エポキシ樹脂１００質量部に対して、６０～２００質量部であることが好ましく、８０～１８０質量部であることがより好ましく、１００～１７０質量部であることが更に好ましい。
From the viewpoint of further improving the light reflectance, the content of the inorganic hollow particles is preferably 60 to 200 parts by mass, more preferably 80 to 180 parts by mass with respect to 100 parts by mass of the epoxy resin. It is more preferably 100 to 170 parts by mass.
（離型剤）
本実施形態に係る離型剤は、亜鉛系金属石鹸とアルミニウム系金属石鹸とを含む。亜鉛系金属石鹸は、亜鉛と長鎖脂肪酸との金属塩である。亜鉛系金属石鹸を用いることで、本実施形態に係る熱硬化性樹脂組成物の成形金型からの離型性を向上することができる。アルミニウム系金属石鹸は、アルミニウムと長鎖脂肪酸との金属塩である。アルミニウム系金属石鹸を用いることで、本実施形態に係る熱硬化性樹脂組成物の耐熱性を高めることができる。 (Release agent)
The mold release agent according to the present embodiment includes a zinc-based metal soap and an aluminum-based metal soap. Zinc-based metal soap is a metal salt of zinc and long-chain fatty acids. By using the zinc-based metal soap, the releasability of the thermosetting resin composition according to the present embodiment from the molding die can be improved. Aluminum-based metal soap is a metal salt of aluminum and long chain fatty acids. By using an aluminum-based metal soap, the heat resistance of the thermosetting resin composition according to the present embodiment can be enhanced.
本実施形態に係る離型剤は、亜鉛系金属石鹸とアルミニウム系金属石鹸とを含む。亜鉛系金属石鹸は、亜鉛と長鎖脂肪酸との金属塩である。亜鉛系金属石鹸を用いることで、本実施形態に係る熱硬化性樹脂組成物の成形金型からの離型性を向上することができる。アルミニウム系金属石鹸は、アルミニウムと長鎖脂肪酸との金属塩である。アルミニウム系金属石鹸を用いることで、本実施形態に係る熱硬化性樹脂組成物の耐熱性を高めることができる。 (Release agent)
The mold release agent according to the present embodiment includes a zinc-based metal soap and an aluminum-based metal soap. Zinc-based metal soap is a metal salt of zinc and long-chain fatty acids. By using the zinc-based metal soap, the releasability of the thermosetting resin composition according to the present embodiment from the molding die can be improved. Aluminum-based metal soap is a metal salt of aluminum and long chain fatty acids. By using an aluminum-based metal soap, the heat resistance of the thermosetting resin composition according to the present embodiment can be enhanced.
離型性をより向上させる観点から、長鎖脂肪酸の炭素数は、１０以上、１４以上、１８以上、又は２０以上であってよい。樹脂組成物中に均一に分散させる観点から、長鎖脂肪酸の炭素数は、４０以下、３６以下、３０以下、又は２６以下であってよい。長鎖脂肪酸としては、例えば、ラウリン酸、ミリスチン酸、パルミチン酸、ステアリン酸、ベヘン酸、アラキジン酸、リグノセリン酸、セロチン酸及びモンタン酸が挙げられる。
From the viewpoint of further improving the releasability, the carbon number of the long chain fatty acid may be 10 or more, 14 or more, 18 or more, or 20 or more. From the viewpoint of uniformly dispersing in the resin composition, the carbon number of the long chain fatty acid may be 40 or less, 36 or less, 30 or less, or 26 or less. Examples of long chain fatty acids include lauric acid, myristic acid, palmitic acid, stearic acid, behenic acid, arachidic acid, lignoceric acid, cerotic acid and montanic acid.
亜鉛系金属石鹸は、亜鉛と炭素数１０以上長鎖脂肪酸との金属塩を含んでよい。亜鉛系金属石鹸を構成する長鎖脂肪酸の炭素数は、１４以上が好ましく、１８以上がより好ましく、２０以上が更に好ましい。
The zinc-based metal soap may contain a metal salt of zinc and a long-chain fatty acid having 10 or more carbon atoms. The carbon number of the long chain fatty acid constituting the zinc-based metal soap is preferably 14 or more, more preferably 18 or more, and further preferably 20 or more.
アルミニウム系金属石鹸は、アルミニウムと炭素数１０以上の長鎖脂肪酸とを含んでよい。アルミニウム系金属石鹸を構成する長鎖脂肪酸の炭素数は、１４以上が好ましく、１６以上がより好ましく、１８以上が更に好ましい。
Aluminum-based metal soap may contain aluminum and long-chain fatty acids having 10 or more carbon atoms. The carbon number of the long chain fatty acid constituting the aluminum-based metal soap is preferably 14 or more, more preferably 16 or more, and further preferably 18 or more.
熱硬化性樹脂組成物中の離型剤の含有量（亜鉛系金属石鹸及びアルミニウム系金属石鹸の総量）は、エポキシ樹脂１００質量部に対して、１～１５質量部、２～１０質量部、又は３～８質量部であってよい。
The content of the release agent (total amount of zinc-based metal soap and aluminum-based metal soap) in the thermosetting resin composition is 1 to 15 parts by mass and 2 to 10 parts by mass with respect to 100 parts by mass of the epoxy resin. Alternatively, it may be 3 to 8 parts by mass.
（硬化促進剤）
本実施形態に係る熱硬化性樹脂組成物は、エポキシ樹脂の硬化反応を促進するために、硬化促進剤を含有してよい。硬化促進剤としては、例えば、アミン化合物、イミダゾール化合物、有機リン化合物、アルカリ金属化合物、アルカリ土類金属化合物及び第４級アンモニウム塩が挙げられる。これらの硬化促進剤の中でも、アミン化合物、イミダゾール化合物又は有機リン化合物を用いることが好ましい。硬化促進剤は、１種を単独で又は２種以上を組み合わせて使用してもよい。 (Curing accelerator)
The thermosetting resin composition according to the present embodiment may contain a curing accelerator in order to accelerate the curing reaction of the epoxy resin. Examples of the curing accelerator include amine compounds, imidazole compounds, organophosphorus compounds, alkali metal compounds, alkaline earth metal compounds and quaternary ammonium salts. Among these curing accelerators, it is preferable to use an amine compound, an imidazole compound or an organic phosphorus compound. The curing accelerator may be used alone or in combination of two or more.
本実施形態に係る熱硬化性樹脂組成物は、エポキシ樹脂の硬化反応を促進するために、硬化促進剤を含有してよい。硬化促進剤としては、例えば、アミン化合物、イミダゾール化合物、有機リン化合物、アルカリ金属化合物、アルカリ土類金属化合物及び第４級アンモニウム塩が挙げられる。これらの硬化促進剤の中でも、アミン化合物、イミダゾール化合物又は有機リン化合物を用いることが好ましい。硬化促進剤は、１種を単独で又は２種以上を組み合わせて使用してもよい。 (Curing accelerator)
The thermosetting resin composition according to the present embodiment may contain a curing accelerator in order to accelerate the curing reaction of the epoxy resin. Examples of the curing accelerator include amine compounds, imidazole compounds, organophosphorus compounds, alkali metal compounds, alkaline earth metal compounds and quaternary ammonium salts. Among these curing accelerators, it is preferable to use an amine compound, an imidazole compound or an organic phosphorus compound. The curing accelerator may be used alone or in combination of two or more.
アミン化合物としては、例えば、１，８－ジアザ－ビシクロ［５．４．０］ウンデセン－７、トリエチレンジアミン及びトリ－２，４，６－ジメチルアミノメチルフェノールが挙げられる。イミダゾール化合物としては、例えば、２－エチル－４－メチルイミダゾールが挙げられる。有機リン化合物としては、例えば、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラ－ｎ－ブチルホスホニウム－ｏ，ｏ－ジエチルホスホロジチオエート、テトラ－ｎ－ブチルホスホニウム－テトラフルオロボレート及びテトラ－ｎ－ブチルホスホニウム－テトラフェニルボレートが挙げられる。
Examples of the amine compound include 1,8-diazabicyclo [5.4.0] undecene-7, triethylenediamine and tri-2,4,6-dimethylaminomethylphenol. Examples of the imidazole compound include 2-ethyl-4-methylimidazole. Examples of the organophosphorus compound include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetra-n-butylphosphonium-o, o-diethylphosphologithioate, tetra-n-butylphosphonium-tetrafluoroborate and tetra-n. -Butylphosphonium-tetraphenylborate can be mentioned.
熱硬化性樹脂組成物中の硬化促進剤の含有量は、エポキシ樹脂１００質量部に対して、０．０１～８質量部、０．１～５質量部、又は０．３～４質量部であってよい。硬化促進剤の含有量が、０．０１質量部以上であると、十分な硬化促進効果を得られ易く、８質量部以下であると、硬化物の変色を抑制し易くなる。
The content of the curing accelerator in the thermosetting resin composition is 0.01 to 8 parts by mass, 0.1 to 5 parts by mass, or 0.3 to 4 parts by mass with respect to 100 parts by mass of the epoxy resin. It may be there. When the content of the curing accelerator is 0.01 parts by mass or more, a sufficient curing promoting effect can be easily obtained, and when it is 8 parts by mass or less, discoloration of the cured product can be easily suppressed.
（カップリング剤）
熱硬化性樹脂組成物には、無機充填剤と、エポキシ樹脂との密着性を向上させるために、カップリング剤を添加してよい。カップリング剤としては、特に限定されないが、例えば、シランカップリング剤及びチタネート系カップリング剤が挙げられる。シランカップリング剤としては、例えば、エポキシシラン化合物、アミノシラン化合物、カチオニックシラン化合物、ビニルシラン化合物、アクリルシラン化合物及びメルカプトシラン化合物が挙げられる。カップリング剤の含有量は、熱硬化性樹脂組成物の全量を基準として、５質量％以下であってよい。 (Coupling agent)
A coupling agent may be added to the thermosetting resin composition in order to improve the adhesion between the inorganic filler and the epoxy resin. The coupling agent is not particularly limited, and examples thereof include a silane coupling agent and a titanate-based coupling agent. Examples of the silane coupling agent include epoxysilane compounds, aminosilane compounds, thionicsilane compounds, vinylsilane compounds, acrylicsilane compounds and mercaptosilane compounds. The content of the coupling agent may be 5% by mass or less based on the total amount of the thermosetting resin composition.
熱硬化性樹脂組成物には、無機充填剤と、エポキシ樹脂との密着性を向上させるために、カップリング剤を添加してよい。カップリング剤としては、特に限定されないが、例えば、シランカップリング剤及びチタネート系カップリング剤が挙げられる。シランカップリング剤としては、例えば、エポキシシラン化合物、アミノシラン化合物、カチオニックシラン化合物、ビニルシラン化合物、アクリルシラン化合物及びメルカプトシラン化合物が挙げられる。カップリング剤の含有量は、熱硬化性樹脂組成物の全量を基準として、５質量％以下であってよい。 (Coupling agent)
A coupling agent may be added to the thermosetting resin composition in order to improve the adhesion between the inorganic filler and the epoxy resin. The coupling agent is not particularly limited, and examples thereof include a silane coupling agent and a titanate-based coupling agent. Examples of the silane coupling agent include epoxysilane compounds, aminosilane compounds, thionicsilane compounds, vinylsilane compounds, acrylicsilane compounds and mercaptosilane compounds. The content of the coupling agent may be 5% by mass or less based on the total amount of the thermosetting resin composition.
本実施形態に係る熱硬化性樹脂組成物には、必要に応じて、酸化防止剤、イオン捕捉剤、ワックス分散剤等の添加剤を添加してよい。
Additives such as an antioxidant, an ion scavenger, and a wax dispersant may be added to the thermosetting resin composition according to the present embodiment, if necessary.
本実施形態に係る熱硬化性樹脂組成物は、上述した各種成分を均一に分散し混合することで作製することができる。作製手段、条件等は特に限定されない。熱硬化性樹脂組成物を作製する一般的な方法として、各成分をニーダー、ロール、エクストルーダー、らいかい機、又は、自転と公転を組み合わせた遊星式混合機によって混練する方法を挙げることができる。各成分を混練する際には、分散性を向上する観点から、溶融状態で行うことが好ましい。
The thermosetting resin composition according to the present embodiment can be produced by uniformly dispersing and mixing the various components described above. The manufacturing means, conditions, etc. are not particularly limited. As a general method for producing a thermosetting resin composition, a method of kneading each component with a kneader, a roll, an extruder, a rake machine, or a planetary mixer that combines rotation and revolution can be mentioned. .. When kneading each component, it is preferable to knead each component in a molten state from the viewpoint of improving dispersibility.
混練の条件は、各成分の種類又は配合量により適宜決定すればよく、例えば、１５～１００℃で５～４０分間混練することが好ましく、２０～１００℃で１０～３０分間混練することがより好ましい。混練温度が１５℃以上であると、各成分を混練させ易くなり、分散性を向上できる。混練温度が１００℃以下であると、混練時にエポキシ樹脂の高分子量化が進行して硬化することを抑制できる。混練時間が５分以上であると、十分な分散効果が得られ易くなる。混練時間が４０分以下であると、混練時にエポキシ樹脂の高分子量化が進行して硬化することを抑制できる。
The kneading conditions may be appropriately determined depending on the type or blending amount of each component. For example, kneading at 15 to 100 ° C. for 5 to 40 minutes is preferable, and kneading at 20 to 100 ° C. for 10 to 30 minutes is more preferable. preferable. When the kneading temperature is 15 ° C. or higher, each component can be easily kneaded and the dispersibility can be improved. When the kneading temperature is 100 ° C. or lower, it is possible to prevent the epoxy resin from being cured due to the progress of high molecular weight of the epoxy resin during kneading. When the kneading time is 5 minutes or more, a sufficient dispersion effect can be easily obtained. When the kneading time is 40 minutes or less, it is possible to prevent the epoxy resin from being cured due to the progress of high molecular weight of the epoxy resin during kneading.
本実施形態に係る熱硬化性樹脂組成物は、高い光反射性及び耐熱性を必要とする光半導体素子実装用基板材料、電気絶縁材料、光半導体封止材料、接着材料、塗料材料、トランスファー成形用エポキシ樹脂成形材料等の様々な用途において有用である。以下、本実施形態に係る熱硬化性樹脂組成物をトランスファー成形用エポキシ樹脂成形材料として使用する際の例を述べる。
The thermosetting resin composition according to the present embodiment includes a substrate material for mounting an optical semiconductor device, an electrically insulating material, an optical semiconductor encapsulating material, an adhesive material, a coating material, and transfer molding, which require high light reflectivity and heat resistance. It is useful in various applications such as epoxy resin molding materials. Hereinafter, an example of using the thermosetting resin composition according to the present embodiment as an epoxy resin molding material for transfer molding will be described.
本実施形態に係る熱硬化性樹脂組成物を成形金型温度１８０℃、成形圧力６．９ＭＰａ、硬化時間９０秒間の条件でトランスファー成形する際の流動距離（スパイラルフロー）は、金型への充填性を確保する観点から、６０～２００ｃｍ、８０～１８０ｃｍ、又は１００～１６０ｃｍであってよい。
The flow distance (spiral flow) when the thermosetting resin composition according to the present embodiment is transfer-molded under the conditions of a molding mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds is filled in the mold. From the viewpoint of ensuring the property, it may be 60 to 200 cm, 80 to 180 cm, or 100 to 160 cm.
光半導体装置の輝度を向上させる点から、本実施形態に係る熱硬化性樹脂組成物の硬化物の波長４６０ｎｍにおける初期光反射率は、９３．０％以上であることが好ましく、９３．５％以上であることがより好ましい。耐熱着色性を良好にする観点から、当該硬化物を１５０℃で１６８時間熱処理した後の波長４６０ｎｍにおける光反射率は、９１．０％以上であることが好ましく、９１．２％以上であることがより好ましい。
From the viewpoint of improving the brightness of the optical semiconductor device, the initial light reflectance of the cured product of the thermosetting resin composition according to the present embodiment at a wavelength of 460 nm is preferably 93.0% or more, preferably 93.5%. The above is more preferable. From the viewpoint of improving the heat-resistant coloring property, the light reflectance at a wavelength of 460 nm after heat-treating the cured product at 150 ° C. for 168 hours is preferably 91.0% or more, preferably 91.2% or more. Is more preferable.
［光半導体素子搭載用基板］
本実施形態の光半導体素子搭載用基板は、底面及び壁面から構成される凹部を有する。凹部の底面が光半導体素子搭載部（光半導体素子搭載領域）であり、凹部の壁面、すなわち凹部の内周側面の少なくとも一部が本実施形態の光反射用熱硬化性樹脂組成物の硬化物からなるものである。 [Substrate for mounting optical semiconductor devices]
The substrate for mounting an optical semiconductor element of the present embodiment has a recess formed by a bottom surface and a wall surface. The bottom surface of the recess is an optical semiconductor device mounting portion (optical semiconductor device mounting region), and at least a part of the wall surface of the recess, that is, the inner peripheral side surface of the recess is a cured product of the thermosetting resin composition for light reflection of the present embodiment. It consists of.
本実施形態の光半導体素子搭載用基板は、底面及び壁面から構成される凹部を有する。凹部の底面が光半導体素子搭載部（光半導体素子搭載領域）であり、凹部の壁面、すなわち凹部の内周側面の少なくとも一部が本実施形態の光反射用熱硬化性樹脂組成物の硬化物からなるものである。 [Substrate for mounting optical semiconductor devices]
The substrate for mounting an optical semiconductor element of the present embodiment has a recess formed by a bottom surface and a wall surface. The bottom surface of the recess is an optical semiconductor device mounting portion (optical semiconductor device mounting region), and at least a part of the wall surface of the recess, that is, the inner peripheral side surface of the recess is a cured product of the thermosetting resin composition for light reflection of the present embodiment. It consists of.
図１は、光半導体素子搭載用基板の一実施形態を示す斜視図である。光半導体素子搭載用基板１１０は、Ｎｉ／Ａｇめっき１０４が形成された金属配線１０５（第１の接続端子及び第２の接続端子）と、金属配線１０５（第１の接続端子及び第２の接続端子）間に設けられた絶縁性樹脂成形体１０３’と、リフレクター１０３とを備え、Ｎｉ／Ａｇめっき１０４が形成された金属配線１０５及び絶縁性樹脂成形体１０３’とリフレクター１０３とから形成された光半導体素子搭載領域（凹部）２００を有している。この凹部２００の底面は、Ｎｉ／Ａｇめっき１０４が形成された金属配線１０５及び絶縁性樹脂成形体１０３’から構成され、凹部２００の壁面はリフレクター１０３から構成される。リフレクター１０３及び絶縁性樹脂成形体１０３’が、上述の本実施形態に係る光反射用熱硬化性樹脂組成物の硬化物からなる成形体である。
FIG. 1 is a perspective view showing an embodiment of a substrate for mounting an optical semiconductor element. The substrate 110 for mounting an optical semiconductor element has a metal wiring 105 (first connection terminal and second connection terminal) formed with Ni / Ag plating 104 and a metal wiring 105 (first connection terminal and second connection). The metal wiring 105 provided with the insulating resin molded body 103'provided between the terminals) and the reflector 103, and formed with Ni / Ag plating 104, and the insulating resin molded body 103'and the reflector 103. It has an optical semiconductor element mounting region (recess) 200. The bottom surface of the recess 200 is composed of a metal wiring 105 on which Ni / Ag plating 104 is formed and an insulating resin molded body 103', and the wall surface of the recess 200 is composed of a reflector 103. The reflector 103 and the insulating resin molded body 103'are a molded body made of a cured product of the thermosetting resin composition for light reflection according to the above-described embodiment.
光半導体素子搭載用基板の製造方法は特に限定されないが、例えば、光反射用熱硬化性樹脂組成物を用いたトランスファー成形により製造することができる。図２は、光半導体素子搭載用基板を製造する工程の一実施形態を示す概略図である。光半導体素子搭載用基板は、例えば、金属箔から打ち抜き、エッチング等の公知の方法により金属配線１０５を形成し、電気めっきによりＮｉ／Ａｇめっき１０４を施す工程（図２の（ａ））、次いで、該金属配線１０５を所定形状の金型１５１に配置し、金型１５１の樹脂注入口１５０から光反射用熱硬化性樹脂組成物を注入し、所定の条件でトランスファー成形する工程（図２の（ｂ））、そして、金型１５１を外す工程（図２の（ｃ））を経て製造することができる。このようにして、光半導体素子搭載用基板には、光反射用熱硬化性樹脂組成物の硬化物からなるリフレクター１０３に周囲を囲まれてなる光半導体素子搭載領域（凹部）２００が形成される。また、凹部２００の底面は、第１の接続端子となる金属配線１０５及び第２の接続端子となる金属配線１０５と、これらの間に設けられ光反射用熱硬化性樹脂組成物の硬化物からなる絶縁性樹脂成形体１０３’とから構成される。なお、上記トランスファー成形の条件としては、金型温度１７０～２００℃、より好ましくは１７０～１９０℃、成形圧力０．５～２０ＭＰａ、より好ましくは２～８ＭＰａで、６０～１２０秒間、アフターキュア温度１２０℃～１８０℃で１～３時間が好ましい。
The method for manufacturing the substrate for mounting the optical semiconductor element is not particularly limited, but it can be manufactured, for example, by transfer molding using a thermosetting resin composition for light reflection. FIG. 2 is a schematic view showing an embodiment of a process of manufacturing a substrate for mounting an optical semiconductor element. In the substrate for mounting an optical semiconductor element, for example, a step of forming a metal wiring 105 by a known method such as punching from a metal foil and etching, and applying Ni / Ag plating 104 by electroplating ((a) in FIG. 2), and then A step of arranging the metal wiring 105 in a mold 151 having a predetermined shape, injecting a heat-curable resin composition for light reflection from a resin injection port 150 of the mold 151, and performing transfer molding under predetermined conditions (FIG. 2). It can be manufactured through the steps (b)) and the step of removing the mold 151 ((c) of FIG. 2). In this way, the optical semiconductor element mounting region (recess) 200 formed on the optical semiconductor element mounting substrate is surrounded by a reflector 103 made of a cured product of the thermosetting resin composition for light reflection. .. Further, the bottom surface of the recess 200 is made of a metal wiring 105 as a first connection terminal, a metal wiring 105 as a second connection terminal, and a cured product of a thermosetting resin composition for light reflection provided between them. It is composed of an insulating resin molded body 103'. The conditions for the transfer molding are a mold temperature of 170 to 200 ° C., more preferably 170 to 190 ° C., a molding pressure of 0.5 to 20 MPa, more preferably 2 to 8 MPa, and an aftercure temperature for 60 to 120 seconds. It is preferably 120 ° C. to 180 ° C. for 1 to 3 hours.
［光半導体装置］
本実施形態に係る光半導体装置は、上記光半導体素子搭載用基板と、当該光半導体素子搭載用基板に搭載された光半導体素子とを有する。より具体的な例として、上記光半導体素子搭載用基板と、光半導体素子搭載用基板の凹部内に設けられた光半導体素子と、凹部を充填して光半導体素子を封止する蛍光体含有封止樹脂部とを備える光半導体装置が挙げられる。 [Optical semiconductor device]
The optical semiconductor device according to the present embodiment includes the optical semiconductor element mounting substrate and the optical semiconductor element mounted on the optical semiconductor element mounting substrate. As a more specific example, the substrate for mounting the optical semiconductor element, the optical semiconductor element provided in the recess of the substrate for mounting the optical semiconductor element, and the phosphor-containing seal that fills the recess and seals the optical semiconductor element. An optical semiconductor device including a stop resin portion can be mentioned.
本実施形態に係る光半導体装置は、上記光半導体素子搭載用基板と、当該光半導体素子搭載用基板に搭載された光半導体素子とを有する。より具体的な例として、上記光半導体素子搭載用基板と、光半導体素子搭載用基板の凹部内に設けられた光半導体素子と、凹部を充填して光半導体素子を封止する蛍光体含有封止樹脂部とを備える光半導体装置が挙げられる。 [Optical semiconductor device]
The optical semiconductor device according to the present embodiment includes the optical semiconductor element mounting substrate and the optical semiconductor element mounted on the optical semiconductor element mounting substrate. As a more specific example, the substrate for mounting the optical semiconductor element, the optical semiconductor element provided in the recess of the substrate for mounting the optical semiconductor element, and the phosphor-containing seal that fills the recess and seals the optical semiconductor element. An optical semiconductor device including a stop resin portion can be mentioned.
図３は、光半導体素子搭載用基板１１０に光半導体素子１００を搭載した状態の一実施形態を示す斜視図である。図３に示すように、光半導体素子１００は、光半導体素子搭載用基板１１０の光半導体素子搭載領域（凹部）２００の所定位置に搭載され、金属配線１０５とボンディングワイヤ１０２により電気的に接続される。図４及び図５は、光半導体装置の一実施形態を示す模式断面図である。図４及び図５に示すように、光半導体装置は、光半導体素子搭載用基板１１０と、光半導体素子搭載用基板１１０の凹部２００内の所定位置に設けられた光半導体素子１００と、凹部２００を充填して光半導体素子を封止する蛍光体１０６を含む透明な封止樹脂１０１からなる封止樹脂部とを備えており、光半導体素子１００とＮｉ／Ａｇめっき１０４が形成された金属配線１０５とがボンディングワイヤ１０２又ははんだバンプ１０７により電気的に接続されている。
FIG. 3 is a perspective view showing an embodiment in which the optical semiconductor element 100 is mounted on the optical semiconductor element mounting substrate 110. As shown in FIG. 3, the optical semiconductor element 100 is mounted at a predetermined position in the optical semiconductor element mounting region (recess) 200 of the optical semiconductor element mounting substrate 110, and is electrically connected to the metal wiring 105 by the bonding wire 102. To. 4 and 5 are schematic cross-sectional views showing an embodiment of an optical semiconductor device. As shown in FIGS. 4 and 5, the optical semiconductor device includes an optical semiconductor element mounting substrate 110, an optical semiconductor element 100 provided at a predetermined position in the recess 200 of the optical semiconductor element mounting substrate 110, and the recess 200. The metal wiring is provided with a sealing resin portion made of a transparent sealing resin 101 containing a phosphor 106 for sealing the optical semiconductor element, and the optical semiconductor element 100 and the Ni / Ag plating 104 are formed. The 105 is electrically connected to the bonding wire 102 or the solder bump 107.
図６もまた、光半導体装置の一実施形態を示す模式断面図である。図６に示す光半導体装置では、リフレクター３０３が形成されたリード３０４上の所定位置にダイボンド材３０６を介してＬＥＤ素子３００が配置され、ＬＥＤ素子３００とリード３０４とがボンディングワイヤ３０１により電気的に接続され、蛍光体３０５を含む透明な封止樹脂３０２によりＬＥＤ素子３００が封止されている。
FIG. 6 is also a schematic cross-sectional view showing an embodiment of an optical semiconductor device. In the optical semiconductor device shown in FIG. 6, the LED element 300 is arranged at a predetermined position on the lead 304 on which the reflector 303 is formed via the die bonding material 306, and the LED element 300 and the lead 304 are electrically connected by the bonding wire 301. The LED element 300 is sealed by the transparent sealing resin 302 which is connected and contains the phosphor 305.
以上、本発明の好適な実施形態について説明したが、本発明はこれに制限されない。
Although the preferred embodiment of the present invention has been described above, the present invention is not limited thereto.
以下、本発明を実施例により詳述するが、本発明はこれらに限定されない。
Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited thereto.
［光反射用熱硬化性樹脂組成物の作製］
実施例及び比較例の熱硬化性樹脂組成物を作製するために、以下の成分を準備した。 [Preparation of thermosetting resin composition for light reflection]
The following components were prepared in order to prepare the thermosetting resin compositions of Examples and Comparative Examples.
実施例及び比較例の熱硬化性樹脂組成物を作製するために、以下の成分を準備した。 [Preparation of thermosetting resin composition for light reflection]
The following components were prepared in order to prepare the thermosetting resin compositions of Examples and Comparative Examples.
（エポキシ樹脂）
日産化学工業株式会社製の商品名「ＴＥＰＩＣ－Ｓ」（トリスグリシジルイソシアヌレート、エポキシ当量：１００）
（硬化剤）
式（２）のテトラカルボン酸二無水物(Ｒｘ：シクロヘキサン環、軟化点：４０℃）
新日本理化株式会社製の商品名「リカシッドＨＨ」（ヘキサヒドロ無水フタル酸、融点：３５℃）
マナック株式会社製の商品名「ＯＤＰＡ」（４，４’－オキシジフタル酸無水物、融点：２２９℃）
（硬化促進剤）
日本化学工業株式会社製の商品名「ＰＸ－４ＰＢ」（テトラブチルホスホニウムテトラフェニルボラート）
（カップリング剤）
エポキシシラン化合物（３－グリシドキシプロピルトリメトキシシラン） (Epoxy resin)
Product name "TEPIC-S" manufactured by Nissan Chemical Industries, Ltd. (Trisglycidyl isocyanurate, epoxy equivalent: 100)
(Hardener)
Tetracarboxylic dianhydride of formula (2) (Rx: cyclohexane ring, softening point: 40 ° C)
Product name "Ricacid HH" manufactured by New Japan Chemical Co., Ltd. (Hexahydrophthalic anhydride, melting point: 35 ° C)
Product name "ODPA" manufactured by Manac Inc. (4,4'-oxydiphthalic anhydride, melting point: 229 ° C)
(Curing accelerator)
Product name "PX-4PB" manufactured by Nippon Chemical Industrial Co., Ltd. (Tetrabutylphosphonium tetraphenylborate)
(Coupling agent)
Epoxysilane compound (3-glycidoxypropyltrimethoxysilane)
日産化学工業株式会社製の商品名「ＴＥＰＩＣ－Ｓ」（トリスグリシジルイソシアヌレート、エポキシ当量：１００）
（硬化剤）
式（２）のテトラカルボン酸二無水物(Ｒｘ：シクロヘキサン環、軟化点：４０℃）
新日本理化株式会社製の商品名「リカシッドＨＨ」（ヘキサヒドロ無水フタル酸、融点：３５℃）
マナック株式会社製の商品名「ＯＤＰＡ」（４，４’－オキシジフタル酸無水物、融点：２２９℃）
（硬化促進剤）
日本化学工業株式会社製の商品名「ＰＸ－４ＰＢ」（テトラブチルホスホニウムテトラフェニルボラート）
（カップリング剤）
エポキシシラン化合物（３－グリシドキシプロピルトリメトキシシラン） (Epoxy resin)
Product name "TEPIC-S" manufactured by Nissan Chemical Industries, Ltd. (Trisglycidyl isocyanurate, epoxy equivalent: 100)
(Hardener)
Tetracarboxylic dianhydride of formula (2) (Rx: cyclohexane ring, softening point: 40 ° C)
Product name "Ricacid HH" manufactured by New Japan Chemical Co., Ltd. (Hexahydrophthalic anhydride, melting point: 35 ° C)
Product name "ODPA" manufactured by Manac Inc. (4,4'-oxydiphthalic anhydride, melting point: 229 ° C)
(Curing accelerator)
Product name "PX-4PB" manufactured by Nippon Chemical Industrial Co., Ltd. (Tetrabutylphosphonium tetraphenylborate)
(Coupling agent)
Epoxysilane compound (3-glycidoxypropyltrimethoxysilane)
（離型剤）
日油株式会社製の商品名「ＺＮＳＴ」（ジンクステアレート）
株式会社サンエース製の商品名「ＳＣＩ－ＺＮＢ」（ジンクベヘネート）
日東化成工業株式会社製の商品名「Ａｌ－Ｓｔ（１０２）」（アルミニウムステアレート）
（添加剤）
株式会社ＡＤＥＫＡ製の商品名「アデカスタブ ＡＯ－６０」（ヒンダードフェノール系酸化防止剤）
株式会社ＡＤＥＫＡ製の商品名「アデカスタブ ＰＥＰ－３６Ａ」（ホスファイト系酸化防止剤）
Ｇｅｌｅｓｔ社製の商品名「ＤＢＬ－Ｃ３２」（シリコーン系ワックス分散剤） (Release agent)
Product name "ZNST" manufactured by NOF CORPORATION (Zinc stearate)
Product name "SCI-ZNB" (Zinkbehenate) manufactured by San Ace Co., Ltd.
Product name "Al-St (102)" (aluminum stearate) manufactured by Nitto Kasei Kogyo Co., Ltd.
(Additive)
Product name "ADEKA STAB AO-60" manufactured by ADEKA Corporation (Hindered phenolic antioxidant)
Product name "ADEKA STAB PEP-36A" manufactured by ADEKA Corporation (phosphite-based antioxidant)
Product name "DBL-C32" manufactured by Gelest (silicone wax dispersant)
日油株式会社製の商品名「ＺＮＳＴ」（ジンクステアレート）
株式会社サンエース製の商品名「ＳＣＩ－ＺＮＢ」（ジンクベヘネート）
日東化成工業株式会社製の商品名「Ａｌ－Ｓｔ（１０２）」（アルミニウムステアレート）
（添加剤）
株式会社ＡＤＥＫＡ製の商品名「アデカスタブ ＡＯ－６０」（ヒンダードフェノール系酸化防止剤）
株式会社ＡＤＥＫＡ製の商品名「アデカスタブ ＰＥＰ－３６Ａ」（ホスファイト系酸化防止剤）
Ｇｅｌｅｓｔ社製の商品名「ＤＢＬ－Ｃ３２」（シリコーン系ワックス分散剤） (Release agent)
Product name "ZNST" manufactured by NOF CORPORATION (Zinc stearate)
Product name "SCI-ZNB" (Zinkbehenate) manufactured by San Ace Co., Ltd.
Product name "Al-St (102)" (aluminum stearate) manufactured by Nitto Kasei Kogyo Co., Ltd.
(Additive)
Product name "ADEKA STAB AO-60" manufactured by ADEKA Corporation (Hindered phenolic antioxidant)
Product name "ADEKA STAB PEP-36A" manufactured by ADEKA Corporation (phosphite-based antioxidant)
Product name "DBL-C32" manufactured by Gelest (silicone wax dispersant)
（無機中空粒子）
スリーエムジャパン株式会社製の商品名「ｉＭ３０Ｋ」（中心粒径：１８μｍ、シェル層の厚み：０．６１μｍ、かさ密度：０．３３ｇ／ｃｍ３、耐圧強度：１８６ＭＰａ）
（シリカ）
デンカ株式会社製の商品名「ＦＰ－９５０」（溶融シリカ）
株式会社アドマテックス製、商品名「ＳＯ－２５Ｒ」（溶融シリカ）
富士シリシア化学株式会社製の商品名「サイロホービック７０２」（疎水性微粉末シリカ）
（白色顔料）
酸化チタン（中心粒径０．２μｍ） (Inorganic hollow particles)
Product name "iM30K" manufactured by 3M Japan Ltd. (center particle size: 18 μm, shell layer thickness: 0.61 μm, bulk density: 0.33 g / cm 3 , pressure resistance strength: 186 MPa)
(silica)
Product name "FP-950" (fused silica) manufactured by Denka Corporation
Made by Admatex Co., Ltd., Product name "SO-25R" (molten silica)
Product name "Silo Hobic 702" manufactured by Fuji Silysia Chemical Ltd. (hydrophobic fine powder silica)
(White pigment)
Titanium oxide (center particle size 0.2 μm)
スリーエムジャパン株式会社製の商品名「ｉＭ３０Ｋ」（中心粒径：１８μｍ、シェル層の厚み：０．６１μｍ、かさ密度：０．３３ｇ／ｃｍ３、耐圧強度：１８６ＭＰａ）
（シリカ）
デンカ株式会社製の商品名「ＦＰ－９５０」（溶融シリカ）
株式会社アドマテックス製、商品名「ＳＯ－２５Ｒ」（溶融シリカ）
富士シリシア化学株式会社製の商品名「サイロホービック７０２」（疎水性微粉末シリカ）
（白色顔料）
酸化チタン（中心粒径０．２μｍ） (Inorganic hollow particles)
Product name "iM30K" manufactured by 3M Japan Ltd. (center particle size: 18 μm, shell layer thickness: 0.61 μm, bulk density: 0.33 g / cm 3 , pressure resistance strength: 186 MPa)
(silica)
Product name "FP-950" (fused silica) manufactured by Denka Corporation
Made by Admatex Co., Ltd., Product name "SO-25R" (molten silica)
Product name "Silo Hobic 702" manufactured by Fuji Silysia Chemical Ltd. (hydrophobic fine powder silica)
(White pigment)
Titanium oxide (center particle size 0.2 μm)
表１又は表２に示す配合比（質量部）に従い、各成分を配合し、ミキサーによって十分混練した後、ミキシングロールにより４０℃で１５分間溶融混練して混練物を得た。混練物を冷却し、粉砕することによって、実施例及び比較例の熱硬化性樹脂組成物をそれぞれ作製した。
According to the compounding ratio (parts by mass) shown in Table 1 or Table 2, each component was compounded, sufficiently kneaded with a mixer, and then melt-kneaded at 40 ° C. for 15 minutes with a mixing roll to obtain a kneaded product. The thermosetting resin compositions of Examples and Comparative Examples were prepared by cooling and pulverizing the kneaded product.
［評価］
（スパイラルフロー）
ＥＭＭＩ－１－６６の規格に準じたスパイラルフロー測定用金型を用いて、熱硬化性樹脂組成物を成形金型温度１８０℃、成形圧力６．９ＭＰａ、硬化時間９０秒間の条件下でトランスファー成形した。トランスファー成形する際の熱硬化性樹脂組成物の流動距離（ｃｍ）を測定した。 [Evaluation]
(Spiral flow)
Using a spiral flow measurement mold conforming to the EMMI-1-66 standard, the thermosetting resin composition is transferred under the conditions of a molding mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds. did. The flow distance (cm) of the thermosetting resin composition during transfer molding was measured.
（スパイラルフロー）
ＥＭＭＩ－１－６６の規格に準じたスパイラルフロー測定用金型を用いて、熱硬化性樹脂組成物を成形金型温度１８０℃、成形圧力６．９ＭＰａ、硬化時間９０秒間の条件下でトランスファー成形した。トランスファー成形する際の熱硬化性樹脂組成物の流動距離（ｃｍ）を測定した。 [Evaluation]
(Spiral flow)
Using a spiral flow measurement mold conforming to the EMMI-1-66 standard, the thermosetting resin composition is transferred under the conditions of a molding mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds. did. The flow distance (cm) of the thermosetting resin composition during transfer molding was measured.
（光反射率）
熱硬化性樹脂組成物を、成形金型温度１８０℃、成形圧力６．９ＭＰａ、硬化時間９０秒間の条件でトランスファー成形した後、１５０℃で２時間ポストキュアすることによって、厚み３．０ｍｍの試験片を作製した。積分球型分光光度計Ｖ－７５０型（日本分光株式会社製）を用いて、波長４６０ｎｍにおける試験片の光反射率を測定した。 (Light reflectance)
The thermosetting resin composition is transfer-molded under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds, and then post-cured at 150 ° C. for 2 hours to test a thickness of 3.0 mm. Pieces were made. The light reflectance of the test piece at a wavelength of 460 nm was measured using an integrating sphere spectrophotometer V-750 (manufactured by JASCO Corporation).
熱硬化性樹脂組成物を、成形金型温度１８０℃、成形圧力６．９ＭＰａ、硬化時間９０秒間の条件でトランスファー成形した後、１５０℃で２時間ポストキュアすることによって、厚み３．０ｍｍの試験片を作製した。積分球型分光光度計Ｖ－７５０型（日本分光株式会社製）を用いて、波長４６０ｎｍにおける試験片の光反射率を測定した。 (Light reflectance)
The thermosetting resin composition is transfer-molded under the conditions of a molding die temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds, and then post-cured at 150 ° C. for 2 hours to test a thickness of 3.0 mm. Pieces were made. The light reflectance of the test piece at a wavelength of 460 nm was measured using an integrating sphere spectrophotometer V-750 (manufactured by JASCO Corporation).
（離型性）
熱硬化性樹脂組成物を、せん断離型力測定用金型（図７を参照）に流し込み、成形した。成形条件は、成形金型温度１８０℃、成形圧力６．９ＭＰａ、硬化時間９０秒間とした。図７に示すように、せん断離型力測定用金型４００は、上型４１０と下型４１６とから構成され、上型４１０は、樹脂注入口４１２と、直径２０ｍｍ、厚さ２ｍｍの円板状の成形品を成形するための凹部４１４とを備える。せん断離型力測定用金型４００に、縦５０ｍｍ×横３５ｍｍ×厚さ０．４ｍｍのクロムめっきステンレス板４２０を挿入し、ステンレス板４２０上に熱硬化性樹脂組成物を成形した後、直ちにステンレス板４２０を引き抜き、その際の最大引き抜き力をプッシュプルゲージ（株式会社今田製作所製、型名「ＳＨ」）を用いて測定した。 (Releasability)
The thermosetting resin composition was poured into a mold for measuring shear release force (see FIG. 7) and molded. The molding conditions were a molding mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds. As shown in FIG. 7, the shear release force measuring die 400 is composed of anupper die 410 and a lower die 416, and the upper die 410 has a resin injection port 412 and a disk having a diameter of 20 mm and a thickness of 2 mm. It is provided with a recess 414 for molding a shaped molded product. A chrome-plated stainless steel plate 420 having a length of 50 mm, a width of 35 mm, and a thickness of 0.4 mm is inserted into a die 400 for measuring shear release force, and a thermosetting resin composition is formed on the stainless steel plate 420. The plate 420 was pulled out, and the maximum pulling force at that time was measured using a push-pull gauge (manufactured by Imada Seisakusho Co., Ltd., model name "SH").
熱硬化性樹脂組成物を、せん断離型力測定用金型（図７を参照）に流し込み、成形した。成形条件は、成形金型温度１８０℃、成形圧力６．９ＭＰａ、硬化時間９０秒間とした。図７に示すように、せん断離型力測定用金型４００は、上型４１０と下型４１６とから構成され、上型４１０は、樹脂注入口４１２と、直径２０ｍｍ、厚さ２ｍｍの円板状の成形品を成形するための凹部４１４とを備える。せん断離型力測定用金型４００に、縦５０ｍｍ×横３５ｍｍ×厚さ０．４ｍｍのクロムめっきステンレス板４２０を挿入し、ステンレス板４２０上に熱硬化性樹脂組成物を成形した後、直ちにステンレス板４２０を引き抜き、その際の最大引き抜き力をプッシュプルゲージ（株式会社今田製作所製、型名「ＳＨ」）を用いて測定した。 (Releasability)
The thermosetting resin composition was poured into a mold for measuring shear release force (see FIG. 7) and molded. The molding conditions were a molding mold temperature of 180 ° C., a molding pressure of 6.9 MPa, and a curing time of 90 seconds. As shown in FIG. 7, the shear release force measuring die 400 is composed of an
上記最大引き抜き力を１ショット目のせん断離型力とし、同じステンレス板を用いて熱硬化性樹脂組成物の成形を繰り返し行い、せん断離型力を測定した。せん断離型力が０ＭＰａとなったショット数を表１及び２に示す。
The maximum pull-out force was used as the shear release force of the first shot, and the thermosetting resin composition was repeatedly molded using the same stainless steel plate, and the shear release force was measured. Tables 1 and 2 show the number of shots at which the shear release force was 0 MPa.
表１及び２より、実施例の光反射用熱硬化性樹脂組成物は、離型性及び耐熱性に優れることが確認できる。
From Tables 1 and 2, it can be confirmed that the thermosetting resin composition for light reflection of the examples is excellent in mold releasability and heat resistance.
１００…光半導体素子、１０１…封止樹脂、１０２…ボンディングワイヤ、１０３…リフレクター、１０３’…絶縁性樹脂成形体、１０４…Ｎｉ／Ａｇめっき、１０５…金属配線、１０６…蛍光体、１０７…はんだバンプ、１１０…光半導体素子搭載用基板、１５０…樹脂注入口、１５１…金型、２００…光半導体素子搭載領域、３００…ＬＥＤ素子、３０１…ボンディングワイヤ、３０２…封止樹脂、３０３…リフレクター、３０４…リード、３０５…蛍光体、３０６…ダイボンド材、４００…せん断離型力測定用金型、４１０…上型、４１２…樹脂注入口、４１４…凹部、４１６…下型、４２０…ステンレス板。
100 ... Optical semiconductor device, 101 ... Encapsulating resin, 102 ... Bonding wire, 103 ... Reflector, 103'... Insulating resin molded body, 104 ... Ni / Ag plating, 105 ... Metal wiring, 106 ... Phosphor, 107 ... Solder Bump, 110 ... Optical semiconductor device mounting substrate, 150 ... Resin injection port, 151 ... Mold, 200 ... Optical semiconductor device mounting area, 300 ... LED element, 301 ... Bonding wire, 302 ... Encapsulating resin, 303 ... Reflector, 304 ... lead, 305 ... phosphor, 306 ... die bonding material, 400 ... shear release force measuring mold, 410 ... upper mold, 412 ... resin injection port, 414 ... recess, 416 ... lower mold, 420 ... stainless plate.
Claims (9)
- エポキシ樹脂、硬化剤、無機充填剤、白色顔料及び離型剤を含有し、
前記離型剤が、亜鉛系金属石鹸とアルミニウム系金属石鹸とを含む、光反射用熱硬化性樹脂組成物。 Contains epoxy resin, hardener, inorganic filler, white pigment and mold release agent,
A thermosetting resin composition for light reflection, wherein the release agent contains a zinc-based metal soap and an aluminum-based metal soap. - 前記亜鉛系金属石鹸が、亜鉛と炭素数が１０以上の長鎖脂肪酸との金属塩を含む、請求項１に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to claim 1, wherein the zinc-based metal soap contains a metal salt of zinc and a long-chain fatty acid having 10 or more carbon atoms.
- 前記長鎖脂肪酸の炭素数が、２０以上である、請求項２に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to claim 2, wherein the long chain fatty acid has 20 or more carbon atoms.
- 前記硬化剤が、融点が１８０～４００℃のテトラカルボン酸二無水物を含む、請求項１～３のいずれか一項に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to any one of claims 1 to 3, wherein the curing agent contains a tetracarboxylic dianhydride having a melting point of 180 to 400 ° C.
- 前記無機充填剤が、中心粒径が１～２５μｍの無機中空粒子を含む、請求項１～４のいずれか一項に記載の熱硬化性樹脂組成物。 The thermosetting resin composition according to any one of claims 1 to 4, wherein the inorganic filler contains inorganic hollow particles having a central particle size of 1 to 25 μm.
- 請求項１～５のいずれか一項に記載の光反射用熱硬化性樹脂組成物の硬化物を備える、光半導体素子搭載用基板。 A substrate for mounting an optical semiconductor device, comprising a cured product of the thermosetting resin composition for light reflection according to any one of claims 1 to 5.
- 底面及び壁面から構成される凹部を有し、当該凹部の前記底面が光半導体素子の搭載部であり、
前記凹部の前記壁面の少なくとも一部が、請求項１～５のいずれか一項に記載の光反射用熱硬化性樹脂組成物の硬化物からなる、光半導体素子搭載用基板。 It has a recess composed of a bottom surface and a wall surface, and the bottom surface of the recess is a mounting portion for an optical semiconductor element.
A substrate for mounting an optical semiconductor device, wherein at least a part of the wall surface of the recess is a cured product of the thermosetting resin composition for light reflection according to any one of claims 1 to 5. - 基板と、当該基板上に設けられた第１の接続端子及び第２の接続端子とを備え、
前記第１の接続端子と前記第２の接続端子との間に、請求項１～５のいずれか一項に記載の光反射用熱硬化性樹脂組成物の硬化物を有する、光半導体素子搭載用基板。 A board and a first connection terminal and a second connection terminal provided on the board are provided.
An optical semiconductor device having a cured product of the thermosetting resin composition for light reflection according to any one of claims 1 to 5 between the first connection terminal and the second connection terminal. Board for. - 請求項６～８のいずれか一項に記載の光半導体素子搭載用基板と、当該光半導体素子搭載用基板に搭載された光半導体素子と、を有する、光半導体装置。 An optical semiconductor device comprising the substrate for mounting an optical semiconductor element according to any one of claims 6 to 8 and the optical semiconductor element mounted on the substrate for mounting the optical semiconductor element.
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| JP2021541878A JP7294429B2 (en) | 2019-08-28 | 2019-08-28 | Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element, and optical semiconductor device |
| KR1020227008236A KR20220055471A (en) | 2019-08-28 | 2019-08-28 | Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element, and optical semiconductor device |
| PCT/JP2019/033769 WO2021038766A1 (en) | 2019-08-28 | 2019-08-28 | Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element, and optical semiconductor device |
| CN201980098561.0A CN114127185A (en) | 2019-08-28 | 2019-08-28 | Thermosetting resin composition for light reflection, substrate for mounting optical semiconductor element, and optical semiconductor device |
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| JP2019026710A (en) * | 2017-07-28 | 2019-02-21 | 日立化成株式会社 | Thermosetting resin composition for light reflection, optical semiconductor element mounting substrate and method for producing the same, and optical semiconductor device |
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- 2019-08-28 JP JP2021541878A patent/JP7294429B2/en active Active
- 2019-08-28 KR KR1020227008236A patent/KR20220055471A/en not_active Application Discontinuation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009041472A1 (en) * | 2007-09-25 | 2009-04-02 | Hitachi Chemical Company, Ltd. | Thermosetting resin composition for light reflection, substrate made therefrom for photosemiconductor element mounting, process for producing the same, and photosemiconductor device |
| JP2015152643A (en) * | 2014-02-10 | 2015-08-24 | パナソニックＩｐマネジメント株式会社 | Thermosetting resin composition for light reflector, light reflector and light-emitting device |
| WO2017131152A1 (en) * | 2016-01-27 | 2017-08-03 | クラスターテクノロジー株式会社 | Curable epoxy resin composition for white reflectors, cured product thereof, substrate for mounting optical semiconductor element, and optical semiconductor device |
| JP2019026710A (en) * | 2017-07-28 | 2019-02-21 | 日立化成株式会社 | Thermosetting resin composition for light reflection, optical semiconductor element mounting substrate and method for producing the same, and optical semiconductor device |
Also Published As
| Publication number | Publication date |
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| JP7294429B2 (en) | 2023-06-20 |
| CN114127185A (en) | 2022-03-01 |
| JPWO2021038766A1 (en) | 2021-03-04 |
| KR20220055471A (en) | 2022-05-03 |
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