WO2021017716A1 - Perovskite material-based x-ray digital image detector - Google Patents
Perovskite material-based x-ray digital image detector Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/191—Photoconductor image sensors
- H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8033—Photosensitive area
Definitions
- This application relates to the field of photodetectors, for example, to an X-ray digital image detector based on perovskite materials.
- the X-ray detector is a key component of X-ray machine, and the commonly used X-ray detector is indirect flat panel detector (FPD).
- the X-ray detector includes a substrate, a plurality of detection units arranged on the substrate, and a scintillation layer arranged on the detection unit.
- Each detection unit is composed of a thin film transistor (TFT) and a photosensitive layer.
- TFT thin film transistor
- the principle of the X-ray detector is that after the scintillation layer is irradiated by X-rays, the X-ray photons are converted into visible light, and then the visible light is converted into image electrical signals by the photosensitive layer, and then the electrical signals are collected by the thin film transistor (TFT) with gate control function. , And get digital images.
- CsI cesium iodide
- GOS gadolinium oxysulfide
- This application provides an X-ray digital image detector based on perovskite materials, which aims to solve the problem that the scintillator in the X-ray detector is prone to moisture absorption and deliquescence and light expansion, which causes the image resolution of the X-ray detector to decrease. problem.
- the present application provides an X-ray digital image detector based on a perovskite material, which includes a silicon-based substrate, a detection unit provided on the silicon-based substrate, and a scintillation layer provided on the detection unit, wherein the scintillation
- the material of the layer is an inorganic perovskite material containing lead Pb or gold Au.
- This application provides a method for preparing an X-ray digital image detector based on perovskite materials, including: preparing a detection unit on a silicon-based substrate;
- a scintillation layer is prepared on the detection unit, wherein the material of the scintillation layer is an inorganic perovskite material containing lead Pb or gold Au.
- This application provides a method for preparing an X-ray digital image detector based on perovskite material, which includes the following steps:
- a detection unit is prepared on a silicon-based substrate.
- the detection unit includes a thin film transistor and a photosensitive structure electrically connected to the thin film transistor, and a protective layer is arranged above the thin film transistor and the photosensitive structure, and the protective layer is an oxide layer.
- a scintillation layer is prepared on the surface of the protective layer, and the material of the scintillation layer is an inorganic perovskite material containing lead Pb or gold Au;
- a protective cover plate is arranged on the surface of the waterproof layer to make the X-ray digital image detector based on the perovskite material.
- FIG. 1 is a schematic structural diagram of an X-ray digital image detector based on perovskite material provided by an embodiment of the present invention
- FIG. 2 is a schematic structural diagram of another X-ray digital image detector based on perovskite material provided by an embodiment of the present invention
- Fig. 3 is a flow chart of a method for manufacturing an X-ray digital image detector based on perovskite materials according to an embodiment of the present invention.
- This application provides an X-ray digital image detector based on perovskite materials and a preparation method thereof. The application is described below.
- an embodiment of the present invention provides an X-ray digital image detector based on a perovskite material.
- the X-ray digital detector includes a silicon-based substrate 11, The detection unit 10 on the silicon-based substrate 11 and the scintillation layer 14 provided on the detection unit 10, wherein the material of the scintillation layer 14 is an inorganic perovskite material containing lead Pb or gold Au.
- the materials used for the scintillation layer in traditional X-ray digital image detectors are CsI and GOS.
- the CsI material is a hygroscopic material that will absorb moisture in the air and deliquescence, while the GOS material is a granular material, and the light expansion phenomenon of the GOS material More serious, both will greatly reduce the image resolution, and the X-ray scintillation layer packaging method is less efficient and complicated to operate.
- the CsI material that is easy to absorb moisture and deliquesce in the scintillation layer 14 or the GOS material that is easy to form a light expansion phenomenon is replaced with an inorganic perovskite material containing Pb or Au.
- the inorganic perovskite material can be used in a lower temperature environment
- the medium is processed from liquid, which makes the production process of scintillator materials simpler, lower production cost, lower environmental and equipment requirements, and uses a better waterproof composite film as a waterproof layer, making X-ray digital image detection
- the image quality is not affected by the moisture in the air; and the Pb or Au-containing inorganic perovskite material has a strong absorption of X-rays, which improves the conversion efficiency of X-rays, thereby improving the luminous efficiency of the scintillation structure, And then improve the image quality.
- the material of the scintillation layer 14 is cesium lead bromide CsPbBr 3 , cesium gold bromide CsAuBr 3 , cesium lead chloride CsPbCl 3 , cesium gold chloride CsAuCl 3 , and cesium lead iodide
- CsPbI 3 and cesium gold iodide CsAuI 3 are examples of CsPbI 3 and cesium gold iodide CsAuI 3 , but not limited thereto.
- the inorganic perovskite nanocrystal scintillator containing cesium and lead atoms or cesium and gold atoms exhibits strong X-ray absorption and strong radioluminescence characteristics.
- inorganic perovskite materials can be processed from liquids in a lower temperature environment, and the luminescence spectrum of inorganic perovskite materials can be adjusted by changing the anion composition in the colloid.
- the Pb or Au-containing inorganic perovskite material has a strong absorption of X-rays, which improves the conversion efficiency of X-rays, thereby improving the luminous efficiency of the scintillator.
- the X-ray digital image detector based on the perovskite material further includes: a waterproof layer 15 arranged on the scintillation layer 14, and a waterproof layer 15 arranged on the waterproof layer 15 ⁇ 16 ⁇ On the protective cover 16.
- a waterproof layer 15 arranged on the scintillation layer 14
- a waterproof layer 15 arranged on the waterproof layer 15 ⁇ 16 ⁇ On the protective cover 16.
- the waterproof layer material is a transparent material.
- the waterproof layer is a composite film
- the material of the composite film is polyethylene (PE), polypropylene (PP), polystyrene, polyvinyl chloride (PVC), poly Two or more of polyester (polyethylene terephthalate, PET) and metal foil.
- the protective cover plate is a carbon fiber board or a plastic board.
- a protective layer 29 is further provided between the detection unit 10 and the scintillation layer 14, and the protective layer 29 is indium tin oxide (ITO). film.
- the protective layer is arranged to protect the capacitance in the photoelectric conversion device and the metal lead in the circuit.
- the detection unit 10 includes a thin film transistor 12 and a photosensitive structure 13 electrically connected to the thin film transistor 12.
- the thin film transistor 12 includes a gate 21, an insulating layer 25 disposed above the gate 21, an active layer 22 disposed above the insulating layer 25, and a first electrode disposed above the active layer 22 24 and a second electrode 23; wherein, the first electrode 24 is a source or a drain, the second electrode 23 is connected to an external data line, and the gate 21 is configured to control the turn-on of the thin film transistor 12 Or turned off; the amount of charge transferred from the thin film transistors 12 of different detection units 10 through the second electrode 23 is proportional to the dose of X-rays at different positions, so that X-ray digital image signals can be obtained.
- the insulating layer 25 is a Passivation (PVX) film; the active layer 22 is a hydrogenated amorphous silicon a-Si:H film.
- PVX Passivation
- the active layer 22 is a hydrogenated amorphous silicon a-Si:H film.
- the photosensitive structure 13 includes a sensing electrode 26, a photodiode 27, and a driving electrode 28, wherein the sensing electrode 26 and the source or drain of the thin film transistor 12 Electric connection.
- the material of the driving electrode 28 and the sensing electrode 26 is indium tin oxide or metallic molybdenum or aluminum, which are prepared by magnetron sputtering method and solution method.
- the driving electrode 28 is used to apply a voltage to the photodiode 27, and charge is formed in the photodiode 27, and the charge moves and is received by the sensing electrode 26.
- the scintillation layer When the scintillation layer is irradiated by X-rays, it converts X-ray photons into visible light, and then the visible light is converted into image electrical signals by photodiodes, and then the electrical signals are collected by thin film transistors (TFT) with gate control and digital images are obtained image.
- TFT thin film transistors
- the embodiment of the present invention also provides a method for preparing an X-ray digital image detector based on perovskite material, including:
- a scintillation layer is prepared on the detection unit, wherein the material of the scintillation layer is an inorganic perovskite material containing lead Pb or gold Au.
- the detection unit includes a thin film transistor and a photosensitive structure electrically connected to the thin film transistor;
- the method further includes: arranging an indium tin oxide ITO film as a protective layer above the thin film transistor and the photosensitive structure.
- the method further includes:
- a protective cover plate is arranged on the surface of the waterproof layer to make the X-ray digital image detector based on the perovskite material.
- the embodiment of the present invention also provides a method for preparing an X-ray digital image detector based on a perovskite material, as shown in FIG. 3, including the following steps:
- a detection unit is prepared on a silicon-based substrate.
- the detection unit includes a thin film transistor and a photosensitive structure electrically connected to the thin film transistor, and a protective layer is provided on the thin film transistor and the photosensitive structure.
- the protective layer is an indium tin oxide ITO film.
- a scintillation layer is prepared on the surface of the protective layer, and the material of the scintillation layer is an inorganic perovskite material containing Pb or Au.
- a protective cover is provided on the surface of the waterproof layer to manufacture the X-ray digital image detector based on the perovskite material.
- the gate 21, the driving electrode 28 and the sensing electrode 26 are formed on a silicon-based substrate by magnetron sputtering.
- the target material of magnetron sputtering is molybdenum Mo or aluminum Al. 21.
- a dielectric film is formed on the silicon-based substrate of the driving electrode 28 and the sensing electrode 26, the dielectric film includes a-Si:H film and PVX film, the a-Si:H film is the core film of the active layer 22 , Is the conductive channel between the source and drain electrodes 24; the function of the PVX film is to act as an insulating layer 25 between the gate 21 and the active layer 22, and as a protection between the metal of the source and drain electrodes 24 and the active layer 22 Layer;
- Use magnetron sputtering process to prepare source and drain electrodes on the silicon base substrate that generates the dielectric film, add photodiodes as the photosensitive layer on the silicon base substrate that forms the dielectric film; add protection to the formed dielectric film silicon base substrate Layer 29
- the X-ray digital image detector based on perovskite materials replaces the CsI material that is easily hygroscopic and deliquescent and the GOS material with serious light diffusion in the scintillation layer into inorganic materials containing Pb or Au.
- the perovskite material makes the production process simpler, lower cost, lower requirements for equipment and environment, and uses a better waterproof composite film as a waterproof layer, so that the X-ray digital image detector will not be affected by the air Moisture affects the image resolution; and the Pb or Au-containing inorganic perovskite material has a strong absorption of X-rays, which improves the conversion efficiency of X-rays, thereby improving the luminous efficiency of the scintillation structure, thereby improving image quality.
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- Measurement Of Radiation (AREA)
Abstract
Description
本申请要求在2019年07月30日提交中国专利局、申请号为201910696275.6的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。This application claims the priority of a Chinese patent application filed with the Chinese Patent Office with an application number of 201910696275.6 on July 30, 2019. The entire content of the application is incorporated into this application by reference.
本申请涉及光电探测器领域，例如涉及一种基于钙钛矿材料的X射线数字图像探测器。This application relates to the field of photodetectors, for example, to an X-ray digital image detector based on perovskite materials.
自从
X射线探测器是X射线机的关键部件，常用的X射线探测器是间接平板探测器(Flat Panel Detector，FPD)。X射线探测器包括基底，设置在基底上的多个探测单元，以及设置在探测单元上的闪烁层，每个探测单元由薄膜晶体管(Thin Film Transistor，TFT)和感光层组成。X射线探测器原理为闪烁层经过X射线照射后，会把X射线光子转变成可见光，然后由感光层将可见光变成图像电信号，再由具有门控作用的薄膜晶体管(TFT)收集电信号，并获得数字图像。X-ray detector is a key component of X-ray machine, and the commonly used X-ray detector is indirect flat panel detector (FPD). The X-ray detector includes a substrate, a plurality of detection units arranged on the substrate, and a scintillation layer arranged on the detection unit. Each detection unit is composed of a thin film transistor (TFT) and a photosensitive layer. The principle of the X-ray detector is that after the scintillation layer is irradiated by X-rays, the X-ray photons are converted into visible light, and then the visible light is converted into image electrical signals by the photosensitive layer, and then the electrical signals are collected by the thin film transistor (TFT) with gate control function. , And get digital images.
常用的闪烁层材料有碘化铯(CsI)和硫氧化钆(GOS)。CsI材料通过高温结晶方法做成晶柱屏来提高分辨率，但由于CsI材料为吸湿性材料，会吸收空气中的水分而潮解，使图像分辨率大大降低，并且X射线闪烁屏封装方法效率较低，操作复杂，而且效果不佳。GOS材料成本低，转换效率高，但由于GOS呈颗粒状，使得光拓展较严重，且GOS制作的闪烁层太薄，不然会降低分辨率。Commonly used scintillation layer materials are cesium iodide (CsI) and gadolinium oxysulfide (GOS). The CsI material is made into a pillar screen by high temperature crystallization to improve the resolution. However, because the CsI material is a hygroscopic material, it will absorb moisture in the air and deliquesce, which greatly reduces the image resolution, and the X-ray scintillation screen packaging method is more efficient Low, complex operation, and poor effect. GOS material has low cost and high conversion efficiency, but because GOS is granular, light expansion is serious, and the scintillation layer made by GOS is too thin, otherwise the resolution will be reduced.
因此，相关技术还有待于改进和发展。Therefore, related technologies need to be improved and developed.
发明内容Summary of the invention
本申请提供一种基于钙钛矿材料的X射线数字图像探测器，旨在解决X射线探测器中的闪烁体易吸湿潮解、易发生光拓展现象，导致X射线探测器的图像分辨率降低的问题。This application provides an X-ray digital image detector based on perovskite materials, which aims to solve the problem that the scintillator in the X-ray detector is prone to moisture absorption and deliquescence and light expansion, which causes the image resolution of the X-ray detector to decrease. problem.
本申请提供一种基于钙钛矿材料的X射线数字图像探测器，包括硅基基底、设置在硅基基底上的探测单元，以及设置在所述探测单元上的闪烁层，其中，所述闪烁层的材料为含铅Pb或金Au的无机钙钛矿材料。The present application provides an X-ray digital image detector based on a perovskite material, which includes a silicon-based substrate, a detection unit provided on the silicon-based substrate, and a scintillation layer provided on the detection unit, wherein the scintillation The material of the layer is an inorganic perovskite material containing lead Pb or gold Au.
本申请提供一种基于钙钛矿材料的X射线数字图像探测器的制备方法，包 括：在硅基基底上制备探测单元；This application provides a method for preparing an X-ray digital image detector based on perovskite materials, including: preparing a detection unit on a silicon-based substrate;
在所述探测单元上制备闪烁层，其中，所述闪烁层的材料为含铅Pb或金Au的无机钙钛矿材料。A scintillation layer is prepared on the detection unit, wherein the material of the scintillation layer is an inorganic perovskite material containing lead Pb or gold Au.
本申请提供一种基于钙钛矿材料的X射线数字图像探测器的制备方法，包括以下步骤：This application provides a method for preparing an X-ray digital image detector based on perovskite material, which includes the following steps:
在硅基基底上制备探测单元，所述探测单元包括薄膜晶体管以及与所述薄膜晶体管电连接的感光结构，以及在所述薄膜晶体管和感光结构上方设置保护层，所述保护层是一层氧化铟锡ITO薄膜；A detection unit is prepared on a silicon-based substrate. The detection unit includes a thin film transistor and a photosensitive structure electrically connected to the thin film transistor, and a protective layer is arranged above the thin film transistor and the photosensitive structure, and the protective layer is an oxide layer. Indium tin ITO film;
在所述保护层表面制备一层闪烁层，所述闪烁层的材料为含铅Pb或金Au的无机钙钛矿材料；A scintillation layer is prepared on the surface of the protective layer, and the material of the scintillation layer is an inorganic perovskite material containing lead Pb or gold Au;
在所述闪烁层表面制备一层防水层；Preparing a waterproof layer on the surface of the scintillation layer;
在所述防水层表面设置一层保护盖板，制得所述基于钙钛矿材料的X射线数字图像探测器。A protective cover plate is arranged on the surface of the waterproof layer to make the X-ray digital image detector based on the perovskite material.
图1为本发明实施例提供的一种基于钙钛矿材料的X射线数字图像探测器的结构示意图；FIG. 1 is a schematic structural diagram of an X-ray digital image detector based on perovskite material provided by an embodiment of the present invention;
图2为本发明实施例提供的另一种基于钙钛矿材料的X射线数字图像探测器的结构示意图；2 is a schematic structural diagram of another X-ray digital image detector based on perovskite material provided by an embodiment of the present invention;
图3为本发明实施例提供的一种基于钙钛矿材料的X射线数字图像探测器的制备方法的流程图。Fig. 3 is a flow chart of a method for manufacturing an X-ray digital image detector based on perovskite materials according to an embodiment of the present invention.
本申请提供了一种基于钙钛矿材料的X射线数字图像探测器及其制备方法，以下对本申请进行说明。This application provides an X-ray digital image detector based on perovskite materials and a preparation method thereof. The application is described below.
请参阅图1和图2，本发明实施例提供了一种基于钙钛矿材料的X射线数字图像探测器，如图1所示，所述X射线数字探测器包括硅基基底11、设置在硅基基底11上的探测单元10，以及设置在所述探测单元10上的闪烁层14，其 中，所述闪烁层14的材料为含铅Pb或金Au的无机钙钛矿材料。1 and 2, an embodiment of the present invention provides an X-ray digital image detector based on a perovskite material. As shown in FIG. 1, the X-ray digital detector includes a silicon-based
传统X射线数字图像探测器中的闪烁层所采用的材料为CsI和GOS，CsI材料为吸湿性材料，会吸收空气中的水分而潮解，而GOS材料为颗粒状材料，GOS材料的光拓展现象比较严重，两者都会使图像分辨率大大降低，而且X射线闪烁层封装方法效率较低，操作复杂。本实施例通过将闪烁层14中易吸湿潮解的CsI材料或易形成光拓展现象的GOS材料换成含Pb或Au的无机钙钛矿材料，由于所述无机钙钛矿材料可以在较低温环境中由液体中加工而成，使得闪烁体材料的生产工艺更加简单，生产成本更加低廉，对环境、设备要求更低，且使用防水性更好的复合薄膜作为防水层，使得X射线数字图像探测器不会因为空气中的水分而影响图像质量；并且所述含Pb或Au的无机钙钛矿材料对X射线有强烈的吸收，提高了X射线的转换效率，从而提高闪烁结构的发光效率，进而提高图像质量。The materials used for the scintillation layer in traditional X-ray digital image detectors are CsI and GOS. The CsI material is a hygroscopic material that will absorb moisture in the air and deliquescence, while the GOS material is a granular material, and the light expansion phenomenon of the GOS material More serious, both will greatly reduce the image resolution, and the X-ray scintillation layer packaging method is less efficient and complicated to operate. In this embodiment, the CsI material that is easy to absorb moisture and deliquesce in the
在一种可选的实施方式中，所述闪烁层14的材料为溴化铅铯CsPbBr
3、溴化金铯CsAuBr
3、氯化铅铯CsPbCl
3、氯化金铯CsAuCl
3、碘化铅铯CsPbI
3和碘化金铯CsAuI
3中的一种或多种，但不限于此。所述包含铯和铅原子或者铯和金原子的无机钙钛矿纳米晶体闪烁体表现出很强的X射线吸收和强烈的辐射发光特性。与以前的闪烁体材料不同，无机钙钛矿材料可以在较低温环境中由液体加工而成，而且可以通过改变胶体中阴离子成分调节无机钙钛矿材料的发光光谱。在一实施例中，所述含Pb或Au的无机钙钛矿材料对X射线有强烈的吸收，提高了X射线的转换效率，从而提高闪烁体的发光效率。这些特性说明可以运用无机钙钛矿纳米晶体材料制造出灵活且高灵敏度的X射线数字图像探测器。
In an optional embodiment, the material of the
在一种可选的实施方式中，如图2所示，基于钙钛矿材料的X射线数字图像探测器还包括：设置在闪烁层14上的防水层15，以及设置在所述防水层15上的保护盖板16。通过在所述闪烁层上制备一层防水层，可防止空气中的水影响闪烁层的性质，进而影响图像分辨率。可选的，所述防水层材料为透明材料。可选的，所述防水层为复合薄膜，所述复合薄膜的材料为聚乙烯(polyethylene，PE)、聚丙烯(polypropylene，PP)、聚苯乙烯、聚氯乙烯(Polyvinyl chloride，PVC)、聚酯(Polyethylene terephthalate，PET)、金属箔中的两种或多种。通过在所述防水层上设置一层保护盖板，可保护闪烁结构内部膜层不受损伤。可选的，所述保护盖板为碳纤维板或塑料板。In an alternative embodiment, as shown in FIG. 2, the X-ray digital image detector based on the perovskite material further includes: a
在一种可选的实施方式中，如图2所示，所述探测单元10和闪烁层14之间还设置有保护层29，所述保护层29为氧化铟锡(Indium tin oxide，ITO)薄膜。所述保护层设置为保护光电转换器件内的电容和电路中的金属引线。In an optional embodiment, as shown in FIG. 2, a
在一种可选的实施方式中，如图1和2所述，所述探测单元10包括薄膜晶 体管12以及与所述薄膜晶体管12电连接的感光结构13。所述薄膜晶体管12包括栅极21、设置在所述栅极21上方的绝缘层25、设置在所述绝缘层25上方的有源层22、设置在所述有源层22上方的第一电极24和第二电极23；其中，所述第一电极24为源极或漏极，所述第二电极23与外部数据线相连，所述栅极21设置为控制所述薄膜晶体管12的接通或关断；不同探测单元10的薄膜晶体管12通过第二电极23向外传输的电荷量与不同位置的X射线的剂量成正比，这样就能获取X射线的数字图像信号。In an alternative embodiment, as shown in FIGS. 1 and 2, the
可选的，所述绝缘层25为钝化层(Passivation，PVX)薄膜；所述有源层22为氢化非晶硅a-Si:H薄膜。Optionally, the
可选的，如图2所示，所述感光结构13包括感测电极26、光电二极管27以及驱动电极28，其中，所述感测电极26与所述薄膜晶体管12中的源极或漏极电连接。可选的，所述驱动电极28和感测电极26的材料为氧化铟锡或者金属钼或者铝，通过磁控溅射法和溶液法制备而成。所述驱动电极28用于向光电二极管27中施加电压，在所述光电二极管27中形成电荷，电荷移动并被感测电极26接收。当闪烁层经过X射线照射后，会把X射线光子转变成可见光，然后由光电二极管将可见光变成图像电信号，再由具有门控作用的薄膜晶体管(TFT)收集电信号，并获得数字图像图像。Optionally, as shown in FIG. 2, the
在一实施例中，本发明实施例还提供一种基于钙钛矿材料的X射线数字图像探测器的制备方法，包括：In an embodiment, the embodiment of the present invention also provides a method for preparing an X-ray digital image detector based on perovskite material, including:
在硅基基底上制备探测单元；Prepare the detection unit on the silicon-based substrate;
在所述探测单元上制备闪烁层，其中，所述闪烁层的材料为含铅Pb或金Au的无机钙钛矿材料。A scintillation layer is prepared on the detection unit, wherein the material of the scintillation layer is an inorganic perovskite material containing lead Pb or gold Au.
在一实施例中，所述探测单元包括薄膜晶体管以及与所述薄膜晶体管电连接的感光结构；In an embodiment, the detection unit includes a thin film transistor and a photosensitive structure electrically connected to the thin film transistor;
在所述探测单元上制备闪烁层之前，还包括：在所述薄膜晶体管和所述感光结构上方设置一层氧化铟锡ITO薄膜作为保护层。Before preparing the scintillation layer on the detection unit, the method further includes: arranging an indium tin oxide ITO film as a protective layer above the thin film transistor and the photosensitive structure.
在一实施例中，在所述探测单元上制备闪烁层之后，还包括：In an embodiment, after preparing the scintillation layer on the detection unit, the method further includes:
在所述闪烁层表面制备一层防水层；Preparing a waterproof layer on the surface of the scintillation layer;
在所述防水层的表面设置一层保护盖板，制得所述基于钙钛矿材料的X射线数字图像探测器。A protective cover plate is arranged on the surface of the waterproof layer to make the X-ray digital image detector based on the perovskite material.
本发明实施例还提供一种基于钙钛矿材料的X射线数字图像探测器的制备方法，如图3所示，包括以下步骤：The embodiment of the present invention also provides a method for preparing an X-ray digital image detector based on a perovskite material, as shown in FIG. 3, including the following steps:
S10、在硅基基底上制备探测单元，所述探测单元包括薄膜晶体管以及与所述薄膜晶体管电连接的感光结构，以及在所述薄膜晶体管和感光结构上方设置保护层。其中，所述保护层是一层氧化铟锡ITO薄膜。S10. A detection unit is prepared on a silicon-based substrate. The detection unit includes a thin film transistor and a photosensitive structure electrically connected to the thin film transistor, and a protective layer is provided on the thin film transistor and the photosensitive structure. Wherein, the protective layer is an indium tin oxide ITO film.
S20、在所述保护层表面制备一层闪烁层，所述闪烁层的材料为含Pb或Au的无机钙钛矿材料。S20. A scintillation layer is prepared on the surface of the protective layer, and the material of the scintillation layer is an inorganic perovskite material containing Pb or Au.
S30、在所述闪烁层表面制备一层防水层。S30, preparing a waterproof layer on the surface of the scintillation layer.
S40、在所述防水层表面设置一层保护盖板，制得所述基于钙钛矿材料的X射线数字图像探测器。S40. A protective cover is provided on the surface of the waterproof layer to manufacture the X-ray digital image detector based on the perovskite material.
在一实施例中，在硅基基板上用磁控溅射的方法形成栅极21、驱动电极28和感测电极26，磁控溅射的靶材为钼Mo或铝Al，在形成栅极21、驱动电极28和感测电极26的硅基基板上形成介质薄膜，所述介质薄膜包括a-Si:H薄膜以及PVX薄膜，所述a-Si:H薄膜是有源层22的核心薄膜，是源漏电极24间的导电沟道；所述PVX薄膜的作用是作为栅极21与有源层22间的绝缘层25，以及作为源漏电极24的金属与有源层22间的保护层；在生成介质薄膜的硅基基板上用磁控溅射工艺制备源、漏电极，在形成介质薄膜的硅基基板上添加光电二极管作为感光层；在形成的介质薄膜硅基基板上添加保护层29；在保护层29上通过匀胶工艺旋涂含Pb或Au的无机钙钛矿材料作为闪烁层；在所述闪烁层上溅射一层复合薄膜作为防水层；在所述防水层上加上一层保护盖板，即制得本发明实施例所述基于钙钛材料的X射线数字图像探测器。In one embodiment, the
综上所述，本发明实施例提供的基于钙钛矿材料的X射线数字图像探测器，通过将闪烁层中易吸湿潮解的CsI材料和光扩散较严重的GOS材料换成含Pb或Au的无机钙钛矿材料，使得生产工艺更加简单，成本更加低廉，对设备和环境的要求更低，且使用防水性更好的复合薄膜作为防水层，使得X射线数字图像探测器不会因为空气中的水分而影响图像分辨率；并且所述含Pb或Au的无机钙钛矿材料对X射线有强烈的吸收，提高了X射线的转换效率，从而提高闪烁结构的发光效率，进而提高图像质量。In summary, the X-ray digital image detector based on perovskite materials provided by the embodiments of the present invention replaces the CsI material that is easily hygroscopic and deliquescent and the GOS material with serious light diffusion in the scintillation layer into inorganic materials containing Pb or Au. The perovskite material makes the production process simpler, lower cost, lower requirements for equipment and environment, and uses a better waterproof composite film as a waterproof layer, so that the X-ray digital image detector will not be affected by the air Moisture affects the image resolution; and the Pb or Au-containing inorganic perovskite material has a strong absorption of X-rays, which improves the conversion efficiency of X-rays, thereby improving the luminous efficiency of the scintillation structure, thereby improving image quality.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106847956A (en) * | 2017-03-08 | 2017-06-13 | 中国工程物理研究院材料研究所 | A kind of radiation detector based on full-inorganic perovskite monocrystalline and preparation method thereof |
| CN107076864A (en) * | 2014-12-11 | 2017-08-18 | 西门子保健有限责任公司 | Detecting layer comprising perovskite crystal |
| CN109851510A (en) * | 2018-12-21 | 2019-06-07 | 东南大学 | A kind of perovskite crystal/quantum dot composite scintillator and its preparation method and application |
| CN110400813A (en) * | 2019-07-30 | 2019-11-01 | 深圳大学 | An X-ray digital image detector based on perovskite material |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| KR20090072254A (en) * | 2007-12-28 | 2009-07-02 | 주식회사 동부하이텍 | CMOS image sensor and its manufacturing method |
| JP4764469B2 (en) * | 2008-10-31 | 2011-09-07 | 三菱重工業株式会社 | Photoelectric conversion device and method of manufacturing photoelectric conversion device |
| EP3091060B1 (en) * | 2011-09-22 | 2019-08-28 | Saint-Gobain Cristaux et Détecteurs | Apparatus comprising a scintillator |
| CN103337595B (en) * | 2013-07-04 | 2016-04-06 | 上海和辉光电有限公司 | The OLED encapsulation method of flexible package substrate and manufacture method and this substrate of use |
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-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107076864A (en) * | 2014-12-11 | 2017-08-18 | 西门子保健有限责任公司 | Detecting layer comprising perovskite crystal |
| CN106847956A (en) * | 2017-03-08 | 2017-06-13 | 中国工程物理研究院材料研究所 | A kind of radiation detector based on full-inorganic perovskite monocrystalline and preparation method thereof |
| CN109851510A (en) * | 2018-12-21 | 2019-06-07 | 东南大学 | A kind of perovskite crystal/quantum dot composite scintillator and its preparation method and application |
| CN110400813A (en) * | 2019-07-30 | 2019-11-01 | 深圳大学 | An X-ray digital image detector based on perovskite material |
Non-Patent Citations (1)
| Title |
|---|
| CHEN, QIUSHUI ET AL.: "All-inorganic perovskite nanocrystal scintillators", NATURE, vol. 561, no. 7721, 27 August 2018 (2018-08-27), pages 88 - 93, XP036582720, ISSN: 1476-4687 * |
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