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WO2021006156A1 - Elastic wave device - Google Patents

Elastic wave device Download PDF

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Publication number
WO2021006156A1
WO2021006156A1 PCT/JP2020/025871 JP2020025871W WO2021006156A1 WO 2021006156 A1 WO2021006156 A1 WO 2021006156A1 JP 2020025871 W JP2020025871 W JP 2020025871W WO 2021006156 A1 WO2021006156 A1 WO 2021006156A1
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WO
WIPO (PCT)
Prior art keywords
support member
piezoelectric substrate
cover member
end surface
elastic wave
Prior art date
Application number
PCT/JP2020/025871
Other languages
French (fr)
Japanese (ja)
Inventor
井上　和則
慎太郎 大塚
幸一郎 川崎
正宏 福島
雅和 新
中西　秀文
巌雄 藤田
福田　大輔
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2021006156A1 publication Critical patent/WO2021006156A1/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Definitions

  • the present invention relates to an elastic wave device.
  • Patent Document 1 discloses an example of an elastic wave device.
  • This elastic wave device has an excitation electrode provided on the element substrate.
  • a frame portion is provided on the element substrate so as to surround the excitation electrode.
  • a lid is provided on the frame so as to close the frame.
  • the lid When manufacturing or using an elastic wave device, the lid may expand or contract depending on the ambient temperature. When the lid is contracted, stress is applied between the lid and the frame and between the frame and the element substrate. As a result, the lid portion may be peeled off from the frame portion, or the frame portion may be peeled off from the element substrate.
  • An object of the present invention is to provide an elastic wave device capable of suppressing peeling of a cover member from a support member and suppressing peeling of a support member from a piezoelectric substrate.
  • the elastic wave device is provided on the piezoelectric substrate, the excitation electrode provided on the piezoelectric substrate, and the piezoelectric substrate so as to surround the excitation electrode, and has an opening.
  • a support member having a side surface and a cover member provided on the second end surface so as to cover the opening of the support member are provided in a direction parallel to the main surface of the piezoelectric substrate.
  • the support member has a narrow portion located between the first end surface and the second end surface.
  • the inner surface of the support member is inclined so that the width of the support member becomes narrower toward the second end surface, and the cover member has an inclined portion that reaches the second end surface. From the second end surface of the support member to the inclined portion of the inner surface surface.
  • the peeling of the cover member from the support member can be suppressed, and the peeling of the support member from the piezoelectric substrate can be suppressed.
  • FIG. 1 is a schematic front sectional view of an elastic wave device according to a first embodiment of the present invention.
  • FIG. 2 is a schematic plan view showing an electrode structure on a piezoelectric substrate according to the first embodiment of the present invention.
  • FIG. 3 is a schematic plan view showing the electrode structure of the IDT electrode according to the first embodiment of the present invention.
  • FIG. 4 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member according to the first embodiment of the present invention.
  • FIG. 5 is a schematic plan view showing an electrode structure on a cover member according to the first embodiment of the present invention.
  • FIG. 6 is a schematic plan view of the elastic wave device according to the first embodiment of the present invention.
  • FIG. 7 is a schematic front sectional view for explaining the stress applied between the cover member and the support member and between the support member and the piezoelectric substrate in the first embodiment of the present invention.
  • FIG. 8 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member in the first modification of the first embodiment of the present invention.
  • FIG. 9 is a schematic front sectional view showing a part of a support member in a second modification of the first embodiment of the present invention.
  • FIG. 10 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member according to the second embodiment of the present invention.
  • FIG. 11 is a schematic front sectional view of an elastic wave device according to a third embodiment of the present invention.
  • FIG. 12 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member according to the third embodiment of the present invention.
  • FIG. 13 is a schematic plan view showing a cover member according to a third embodiment of the present invention.
  • FIG. 14 is a schematic front sectional view for explaining the stress applied between the cover member and the support member and between the support member and the piezoelectric substrate in the third embodiment of the present invention.
  • FIG. 15 is a schematic front sectional view of an elastic wave device according to a modified example of the third embodiment of the present invention.
  • FIG. 16 is a schematic front sectional view of an elastic wave device according to a fourth embodiment of the present invention.
  • FIG. 1 is a schematic front sectional view of an elastic wave device according to a first embodiment of the present invention.
  • the elastic wave device 1 has a piezoelectric substrate 2.
  • the piezoelectric substrate 2 has a main surface 2a.
  • the piezoelectric substrate 2 is a piezoelectric substrate composed of only a piezoelectric layer.
  • the material of the piezoelectric layer for example, lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, quartz, PZT or the like can be used.
  • the piezoelectric substrate 2 may be a laminated substrate having a layer other than the piezoelectric layer.
  • the piezoelectric substrate 2 of this embodiment has a rectangular shape in a plan view.
  • the shape of the piezoelectric substrate 2 is not limited to the above.
  • the plan view means a direction viewed from above as shown in FIG.
  • FIG. 2 is a schematic plan view showing the electrode structure on the piezoelectric substrate in the first embodiment.
  • the IDT electrode and the reflector which will be described later, are shown by a schematic diagram in which two diagonal lines are added to a rectangle.
  • FIG. 1 is a view of a portion corresponding to a cross section along the line II in FIG. 2 as viewed from a direction parallel to one side of the piezoelectric substrate 2.
  • FIG. 3 is a schematic plan view showing the electrode structure of the IDT electrode in the first embodiment.
  • the wiring electrode and the like connected to the IDT electrode are omitted.
  • the IDT electrode 3 has a first bus bar 16 and a second bus bar 17 facing each other, and a plurality of first electrode fingers 18 and a plurality of second electrode fingers 19. One end of each of the plurality of first electrode fingers 18 is connected to the first bus bar 16. One end of each of the plurality of second electrode fingers 19 is connected to the second bus bar 17. The plurality of first electrode fingers 18 and the plurality of second electrode fingers 19 are interleaved with each other. The plurality of first electrode fingers 18 and the plurality of second electrode fingers 19 of the IDT electrode 3 extend in the depth direction of FIG.
  • the IDT electrode 3, the reflector 14, and the reflector 15 may be made of a laminated metal film in which a plurality of metal layers are laminated, or may be made of a single-layer metal film.
  • the surface acoustic wave device 1 of the present embodiment is a SAW (Surface Acoustic Wave) element.
  • the elastic wave device according to the present invention may be a BAW (Bulk Acoustic Wave) element.
  • the elastic wave device according to the present invention may be a ladder type filter or a multiplexer having a plurality of elastic wave resonators utilizing SAW or BAW.
  • a frame-shaped support member 4 having an opening 4k is provided on the main surface 2a of the piezoelectric substrate 2.
  • the support member 4 is provided so as to surround the IDT electrode 3 by the opening 4k.
  • the support member 4 has a first end face 4a and a second end face 4b facing each other.
  • the first end face 4a is an end face located on the piezoelectric substrate 2 side.
  • the support member 4 has an outer surface 4c and an inner surface 4d.
  • the outer side surface 4c and the inner side surface 4d are surfaces that connect the first end surface 4a and the second end surface 4b.
  • the support member 4 is made of a photosensitive resin.
  • the material of the support member 4 is not limited to the above.
  • a cover member 5 is provided on the second end surface 4b of the support member 4 so as to cover the opening 4k.
  • the cover member 5 is made of a photosensitive resin.
  • the material of the cover member 5 is not limited to the above.
  • FIG. 4 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member in the first embodiment.
  • parts other than the piezoelectric substrate, the support member, and the cover member are omitted.
  • parts other than the piezoelectric substrate, the support member, and the cover member may be omitted.
  • the distance between the outer surface 4c and the inner surface 4d in the direction parallel to the main surface 2a of the piezoelectric substrate 2 is defined as the width of the support member 4.
  • the inner side surface 4d of the support member 4 is inclined so that the width of the support member 4 becomes narrower toward the second end surface 4b, and has a first inclined portion 4h that reaches the second end surface 4b.
  • the outer surface 4c of the support member 4 is also inclined so that the width of the support member 4 becomes narrower toward the second end surface 4b, and the first inclined portion 4e reaching the second end surface 4b is formed.
  • the cover member 5 reaches from the second end surface 4b of the support member 4 to the first inclined portion 4h of the inner side surface 4d.
  • the support member 4 has a narrow portion 4X located between the first end surface 4a and the second end surface 4b. More specifically, the second inclined portion 4i in which the inner side surface 4d is inclined so that the width of the support member 4 becomes narrower from the second end surface 4b side toward the first end surface 4a side. It has a third inclined portion 4j that is inclined so that the width of the support member 4 becomes narrower toward the second end surface 4b side from the first end surface 4a side.
  • the outer surface 4c also has the second inclined portion 4f, which is inclined so that the width of the support member 4 becomes narrower toward the first end surface 4a side from the second end surface 4b side, and the first It has a third inclined portion 4g that is inclined so that the width of the support member 4 becomes narrower toward the second end surface 4b side from the end surface 4a side.
  • the narrow portion 4X is composed of the second inclined portion 4f and the third inclined portion 4g of the outer side surface 4c, and the second inclined portion 4i and the third inclined portion 4j of the inner side surface 4d.
  • the configuration of the narrow width portion 4X is not limited to the above, and the width of the narrow width portion 4X may be narrower than that of other portions. However, the narrow portion 4X does not have to be the narrowest portion in the support member 4.
  • first inclined portion, the second inclined portion, and the third inclined portion are inclined linearly in the cross-sectional view shown in FIG. 4, but may be inclined in a curved shape. ..
  • a first wiring electrode 6A electrically connected to the IDT electrode 3 is provided on the main surface 2a of the piezoelectric substrate 2.
  • the support member 4 is provided so as to cover a part of the first wiring electrode 6A.
  • a plurality of openings 12 are provided so as to penetrate the support member 4 and the cover member 5.
  • a via electrode 7 is provided in each opening 12.
  • FIG. 5 is a schematic plan view showing the electrode structure on the cover member in the first embodiment.
  • FIG. 6 is a schematic plan view of the elastic wave device according to the first embodiment. In FIG. 5, the cover member and the like are omitted.
  • a second wiring electrode 6B is provided on the cover member 5 so as to be connected to one end of the via electrode 7.
  • the other end of the via electrode 7 is connected to the first wiring electrode 6A.
  • a sealing resin layer 13 is provided on the main surface 2a of the piezoelectric substrate 2 so as to cover the support member 4, the cover member 5, and the second wiring electrode 6B.
  • the underbump metal layer 8 is provided so as to penetrate the sealing resin layer 13 and connect one end to the second wiring electrode 6B.
  • the bump 9 is provided so as to be joined to the other end of the under bump metal layer 8.
  • the bump 9 is made of, for example, solder.
  • the IDT electrode 3 is arranged in a hollow space surrounded by a piezoelectric substrate 2, a support member 4, and a cover member 5.
  • the IDT electrode 3 is electrically connected to the outside via a first wiring electrode 6A, a via electrode 7, a second wiring electrode 6B, an under bump metal layer 8 and a bump 9.
  • the elastic wave device 1 has a WLP (Wafer Level Package) structure.
  • the feature of this embodiment is that the support member 4 has a narrow portion 4X located between the first end surface 4a and the second end surface 4b, and the inner side surface 4d of the support member 4 is the first inclined portion 4h.
  • the cover member 5 extends from the second end surface 4b of the support member 4 to the first inclined portion 4h.
  • the width of the support member 4 becomes narrower toward the second end surface 4b. As a result, the support member 4 easily sticks into the cover member 5.
  • the cover member 5 and the first inclined portion 4h can be suitably joined. As a result, the joining area between the cover member 5 and the support member 4 can be increased, and the joining force between the cover member 5 and the support member 4 can be increased. Therefore, the cover member 5 is difficult to peel off from the support member 4.
  • FIG. 7 is a schematic front sectional view for explaining the stress applied between the cover member and the support member and between the support member and the piezoelectric substrate in the first embodiment.
  • a stress A is applied between the cover member 5 and the support member 4 as shown in FIG.
  • the component A1 of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress A is a component in the direction of peeling the cover member 5 from the support member 4.
  • the stress A is particularly large when the joint area between the cover member 5 and the support member 4 is large. Due to the contraction of the cover member 5, stress is further applied between the support member 4 and the piezoelectric substrate 2.
  • the component B1 of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress is also a component in the direction of peeling the cover member 5 from the piezoelectric substrate 2.
  • the support member 4 has a narrow portion 4X.
  • the stress can be concentrated on the narrow portion 4X, and the stress applied between the support member 4 and the piezoelectric substrate 2 can be relaxed. Therefore, as described above, in addition to the cover member 5 being difficult to peel off from the support member 4, the support member 4 is hard to peel off from the piezoelectric substrate 2.
  • the cover member 5 When the cover member 5 is made of a photosensitive resin, the cover member 5 shrinks when the cover member 5 is cured. Therefore, the stress applied between the support member 4 and the piezoelectric substrate 2 becomes particularly large. In the present invention, since the stress applied between the support member 4 and the piezoelectric substrate 2 can be relaxed, the present invention is particularly suitable when the cover member 5 is made of a photosensitive resin.
  • the narrow portion 4X of the support member 4 is composed of a second inclined portion and a third inclined portion on both the outer surface 4c and the inner surface 4d.
  • the configuration of the narrow width portion 4X is not limited to the above.
  • a first modification and a second modification of the first embodiment in which only the configuration of the narrow portion is different from the first embodiment, will be shown.
  • the cover member 5 is difficult to peel off from the support member, and the support member is hard to peel off from the piezoelectric substrate 2.
  • the support member 24A is thin because the first inclined portion 4h, the second inclined portion 4i, and the third inclined portion 4j are provided only on the inner side surface 4d.
  • a width portion 24X is configured.
  • the inner side surface 24d has a first step portion 24i and a second step portion 24j.
  • the first step portion 24i is located on the first end surface 4a side.
  • the second step portion 24j is located on the second end surface 4b side. Between the first step portion 24i and the second step portion 24j, the first step portion 24i and the second step portion 24j are provided so that the width of the support member 24B becomes narrower.
  • the outer surface 24c has a first step portion 24f and a second step portion 24g.
  • the first step portion 24f is located on the first end surface 4a side.
  • the second step portion 24g is located on the second end surface 4b side.
  • the narrow portion 24Y is configured by providing each of the above-mentioned step portions. More specifically, each of the above-mentioned step portions is configured as a single step. In addition, each step portion may have a step-like shape having a plurality of steps. One of the outer side surface 24c and the inner side surface 24d may have a first step portion and a second step portion.
  • the position of the narrowest portion of the support member 4 in the narrow portion 4X is closer to the first end surface 4a than to the second end surface 4b.
  • the stress can be further concentrated on the narrow width portion 4X, and the stress applied between the support member 4 and the piezoelectric substrate 2 can be further relaxed. Therefore, the support member 4 is more difficult to peel off from the piezoelectric substrate 2.
  • FIG. 10 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member in the second embodiment.
  • the configurations of the outer surface 34c and the inner surface 34d of the support member 34 are different from those of the first embodiment. Except for the above points, the elastic wave device of the present embodiment has the same configuration as the elastic wave device 1 of the first embodiment.
  • the first end face 4a has a first inner peripheral edge 34l
  • the second end face 4b has a second inner peripheral edge 34m.
  • the alternate long and short dash line C in FIG. 10 indicates the position of the first inner peripheral edge 34l
  • the alternate long and short dash line D indicates the position of the second inner peripheral edge 34m.
  • the first inner peripheral edge 34l is located outside the second inner peripheral edge 34m when viewed from the central portion of the cover member 5.
  • the first inner peripheral edge 34l and the second inner peripheral edge 34m may overlap, or the first inner peripheral edge 34l may be located inside the second inner peripheral edge 34m.
  • the plan view means a direction viewed from above such as FIG. 10 and FIG.
  • the support member 34 since the support member 34 has the narrow portion 4X, it is difficult for the support member 34 to peel off from the piezoelectric substrate 2 as in the first embodiment.
  • FIG. 11 is a schematic front sectional view of the elastic wave device according to the third embodiment.
  • the configuration of the cover member 45 is different from that of the first embodiment.
  • the elastic wave device of the present embodiment has the same configuration as the elastic wave device 1 of the first embodiment.
  • the cover member 45 has a joint portion 45c that is joined to the support member 4.
  • the joint portion 45c is a portion joined to the second end surface 4b and the first inclined portion 4h of the support member 4.
  • the joint portion 45c is located on the outer peripheral portion of the cover member 45.
  • the second end surface 4b of the support member 4 has a portion that is not joined to the cover member 45.
  • the cover member 45 may cover the opening 4k and may be joined to at least a part of the second end surface 4b. Further, the cover member 45 has a central portion 45a.
  • FIG. 12 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member in the third embodiment.
  • the distance between the central portion 45a of the cover member 45 and the piezoelectric substrate 2 in the height direction is Z1, and the distance between the lower end of the joint portion 45c and the piezoelectric substrate 2 in the height direction is Z2.
  • the distance Z2 is the distance in the height direction between the lower end of the portion of the joint portion 45c that reaches the first inclined portion 4h of the support member 4 and the piezoelectric substrate 2.
  • the cover member 45 has a hanging portion 45b.
  • the hanging portion 45b is located between the central portion 45a and the joint portion 45c.
  • the distance between the hanging portion 45b and the piezoelectric substrate 2 is shorter than the distance Z1 and the distance Z2.
  • FIG. 13 is a schematic plan view showing the cover member according to the third embodiment.
  • the joint portion 45c is continuously provided along the circumferential direction when the central portion 45a of the cover member 45 is used as an axis.
  • a drooping portion 45b is provided at all portions in the circumferential direction between the joint portion 45c and the central portion 45a.
  • the drooping portion 45b is located in both of them.
  • the distance between the cover member 45 and the piezoelectric substrate 2 is the distance Z2 between the portion of the joint portion 45c that reaches the first inclined portion 4h and the hanging portion 45b. And has a portion longer than the distance Z3.
  • the distance between the cover member 45 and the piezoelectric substrate 2 becomes shorter toward the hanging portion 45b side from the portion.
  • the distance between the cover member 45 and the piezoelectric substrate 2 becomes longer from the hanging portion 45b toward the central portion 45a.
  • the distance Z1 is the longest among the distances between each portion of the cover member 45 and the piezoelectric substrate 2. Not limited to this, for example, Z1 ⁇ Z2 may be used.
  • the cover member 45 may be formed by molding, for example, using a molding die or the like so as to have a portion to be a joint portion 45c, a hanging portion 45b, and a central portion 45a. In this way, after the cover member 45 is separately formed, the cover member 45 may be joined to the support member 4. At this time, for example, the cover member 45 and the support member 4 may be joined with an adhesive.
  • the method of forming the cover member 45 and the method of joining the cover member 45 and the support member 4 are not limited to the above.
  • FIG. 14 is a schematic front sectional view for explaining the stress applied between the cover member and the support member and between the support member and the piezoelectric substrate in the third embodiment.
  • the cover member 45 has a hanging portion 45b located between the central portion 45a and the joint portion 45c.
  • stress E is applied between the cover member 45 and the support member 4, as shown in FIG.
  • the component E1 of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress E is a component in the direction in which the cover member 45 is brought into close contact with the support member 4. Therefore, the cover member 45 is difficult to peel off from the support member 4.
  • the component F1 of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress applied between the support member 4 and the piezoelectric substrate 2 is also in the direction in which the cover member 45 is brought into close contact with the piezoelectric substrate 2. It is an ingredient. Therefore, the support member 4 is more difficult to peel off from the piezoelectric substrate 2.
  • the distance between the hanging portion 45b and the piezoelectric substrate 2 may be the shortest.
  • the distance between the cover member 45 and the piezoelectric substrate 2 becomes longer from the hanging portion 45b toward the central portion 45a. Thereby, the stress applied to the cover member 45 can be relaxed.
  • a force for pressing the cover member 45 toward the IDT electrode 3 side is applied from the outside, it is difficult for the cover member 45 to come into contact with the IDT electrode 3. Therefore, the elastic wave device is not easily damaged.
  • the hanging portion 45b is provided at a position closer to the joint portion 45c than the central portion 45a.
  • the component of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress applied between the cover member 45 and the support member 4 can be effectively increased. More specifically, the component of the force in the direction of bringing the cover member 45 into close contact with the support member 4 under the stress can be effectively increased, and the force in the direction of bringing the support member 4 into close contact with the piezoelectric substrate 2 can be effectively increased.
  • the ingredients can be effectively increased. Therefore, the peeling of the cover member 45 from the support member 4 can be effectively suppressed, and the peeling of the support member 4 from the piezoelectric substrate 2 can be effectively suppressed.
  • FIG. 16 is a schematic front sectional view of the elastic wave device according to the fourth embodiment.
  • the elastic wave device 61 of this embodiment is a BAW element.
  • the piezoelectric substrate 62 is a laminated substrate having a support substrate 63 and a piezoelectric layer 64.
  • the support substrate 63 has a recess 63a and a support portion 63b surrounding the recess 63a in a plan view.
  • the piezoelectric layer 64 is provided on the support portion 63b of the support substrate 63.
  • the piezoelectric layer 64 has a first main surface 64a and a second main surface 64b facing each other.
  • the second main surface 64b is located on the support substrate 63 side.
  • a first flat plate electrode 65A is provided on the first main surface 64a of the piezoelectric layer 64
  • a second flat plate electrode 65B is provided on the second main surface 64b. More specifically, the first flat plate electrode 65A and the second flat plate electrode 65B are provided in the portion of the piezoelectric layer 64 that overlaps the recess 63a of the support substrate 63 in a plan view.
  • the first flat plate electrode 65A and the second flat plate electrode 65B face each other.
  • the excitation electrodes in this embodiment are a first flat plate electrode 65A and a second flat plate electrode 65B.
  • a first wiring electrode 66A electrically connected to the first flat plate electrode 65A is provided on the first main surface 64a of the piezoelectric layer 64.
  • a first wiring electrode 66B electrically connected to the second flat plate electrode 65B is provided on the second main surface 64b.
  • the same support as in the first embodiment is provided so as to surround the first flat plate electrode 65A and to cover a part of the first wiring electrode 66A.
  • the member 4 is provided.
  • a cover member 5 similar to that of the first embodiment is provided on the second end surface 4b of the support member 4.
  • a via electrode 67A is provided so as to penetrate the support member 4 and the cover member 5.
  • One end of the via electrode 67A is connected to the first wiring electrode 66A.
  • a second wiring electrode 6B is provided on the cover member 5 so as to be joined to the other end of the via electrode 67A.
  • the via electrode 67B is provided so as to penetrate the piezoelectric layer 64, the support member 4, and the cover member 5.
  • One end of the via electrode 67B is connected to the first wiring electrode 66B.
  • a second wiring electrode 6B different from the above is provided on the cover member 5 so as to be connected to the other end of the via electrode 67B.
  • a sealing resin layer 13 is provided on the first main surface 64a of the piezoelectric layer 64 so as to cover the support member 4, the cover member 5, and each of the second wiring electrodes 6B.
  • the underbump metal layer 8 is provided so as to penetrate the sealing resin layer 13 and connect one end to each of the second wiring electrodes 6B.
  • the bump 9 is provided so as to be joined to the other end of the under bump metal layer 8.
  • the support member 4 and the cover member 5 are configured as in the first embodiment. Therefore, the bonding force between the cover member 5 and the support member 4 can be increased. Further, when the cover member 5 contracts, the stress applied between the support member 4 and the piezoelectric substrate 2 can be relaxed. Therefore, the cover member 5 is difficult to peel off from the support member 4, and the support member 4 is hard to peel off from the piezoelectric substrate 2.
  • Elastic wave device 2 Piezoelectric substrate 2a ... Main surface 3 ... IDT electrode 4 ... Support members 4a, 4b ... First and second end faces 4c ... Outer surface 4d ... Inner side surfaces 4e to 4g ... First to third 4h to 4j ... 1st to 3rd inclined portions 4k ... Opening 4X ... Narrow portion 5 ... Cover members 6A, 6B ... 1st and 2nd wiring electrodes 7 ... Via electrodes 8 ... Under bump metal layer 9 ... Bump 12 ... Opening 13 ... Sealing resin layers 14, 15 ... Reflector 16 ... First bus bar 17 ... Second bus bar 18 ... First electrode finger 19 ... Second electrode finger 24A, 24B ... Support Member 24c ...

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  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Provided is an elastic wave device which can suppress separation of a cover member from support members, and which can suppress separation of the support members from a piezoelectric substrate.　This elastic wave device 1 is provided with: a piezoelectric substrate 2; an IDT electrode 3 (a vibration electrode); support members 4 which are provided on the piezoelectric substrate 2 so as to surround the IDT electrode 3, each having first and second end surfaces 4a, 4b opposing each other, an outer side surface 4c, and an inner side surface 4d; and a cover member 5 which is provided on the second end surfaces 4b. When the distance between the outer side surface 4c and the inner side surface 4d along a direction parallel to a main surface 2a of the piezoelectric substrate 2 is set as the width of the support members 4, said support members 4 each have a narrow width section 4X which is positioned between a first end surface 4a and a second end surface 4b thereof. The inner side surfaces 4d are inclined such that the width of the support members 4 narrows approaching the second end surfaces 4b, and have a first inclined section 4h which reaches the respective second end surfaces 4b. The cover member 5 reaches from the second end surface 4b to the first inclined section 4h of the inner side surface 4d of each of the support members 4.

Description

弾性波装置Elastic wave device
　本発明は、弾性波装置に関する。 The present invention relates to an elastic wave device.
　従来、弾性波装置は携帯電話機のフィルタなどに広く用いられている。下記の特許文献１には、弾性波装置の一例が開示されている。この弾性波装置は、素子基板上に設けられた励振電極を有する。励振電極を囲むように、素子基板上に枠部が設けられている。枠部を塞ぐように、枠部上に蓋部が設けられている。 Conventionally, elastic wave devices have been widely used as filters for mobile phones. The following Patent Document 1 discloses an example of an elastic wave device. This elastic wave device has an excitation electrode provided on the element substrate. A frame portion is provided on the element substrate so as to surround the excitation electrode. A lid is provided on the frame so as to close the frame.
特開２０１４－００７７２７号公報Japanese Unexamined Patent Publication No. 2014-007727
　弾性波装置の製造時や使用時においては、周囲温度によって蓋部が膨張または収縮する場合がある。蓋部が収縮したときには、蓋部と枠部との間及び枠部と素子基板との間に応力が加わる。これにより、枠部から蓋部が剥離するおそれや、素子基板から枠部が剥離するおそれがある。 When manufacturing or using an elastic wave device, the lid may expand or contract depending on the ambient temperature. When the lid is contracted, stress is applied between the lid and the frame and between the frame and the element substrate. As a result, the lid portion may be peeled off from the frame portion, or the frame portion may be peeled off from the element substrate.
　本発明の目的は、支持部材からのカバー部材の剥離を抑制することができ、かつ圧電性基板からの支持部材の剥離を抑制することができる、弾性波装置を提供することにある。 An object of the present invention is to provide an elastic wave device capable of suppressing peeling of a cover member from a support member and suppressing peeling of a support member from a piezoelectric substrate.
　本発明に係る弾性波装置は、圧電性基板と、前記圧電性基板上に設けられている励振電極と、前記励振電極を囲むように前記圧電性基板上に設けられており、開口部と、前記圧電性基板側に位置する第１の端面と、前記第１の端面に対向している第２の端面と、前記第１の端面及び前記第２の端面に接続されている外側面及び内側面とを有する、支持部材と、前記支持部材の前記開口部を覆うように、前記第２の端面上に設けられているカバー部材とを備え、前記圧電性基板の主面と平行な方向における前記外側面と前記内側面との距離を前記支持部材の幅としたときに、前記支持部材が、前記第１の端面と前記第２の端面との間に位置する細幅部を有し、前記支持部材の前記内側面が、前記第２の端面に向かうほど前記支持部材の幅が細くなるように傾斜しており、前記第２の端面に至っている傾斜部を有し、前記カバー部材が、前記支持部材の前記第２の端面から前記内側面の前記傾斜部に至っている。 The elastic wave device according to the present invention is provided on the piezoelectric substrate, the excitation electrode provided on the piezoelectric substrate, and the piezoelectric substrate so as to surround the excitation electrode, and has an opening. A first end face located on the piezoelectric substrate side, a second end face facing the first end face, and an outer surface and an inner surface connected to the first end face and the second end face. A support member having a side surface and a cover member provided on the second end surface so as to cover the opening of the support member are provided in a direction parallel to the main surface of the piezoelectric substrate. When the distance between the outer surface and the inner surface is defined as the width of the support member, the support member has a narrow portion located between the first end surface and the second end surface. The inner surface of the support member is inclined so that the width of the support member becomes narrower toward the second end surface, and the cover member has an inclined portion that reaches the second end surface. From the second end surface of the support member to the inclined portion of the inner surface surface.
　本発明に係る弾性波装置によれば、支持部材からのカバー部材の剥離を抑制することができ、かつ圧電性基板からの支持部材の剥離を抑制することができる。 According to the elastic wave device according to the present invention, the peeling of the cover member from the support member can be suppressed, and the peeling of the support member from the piezoelectric substrate can be suppressed.
図１は、本発明の第１の実施形態に係る弾性波装置の模式的正面断面図である。FIG. 1 is a schematic front sectional view of an elastic wave device according to a first embodiment of the present invention. 図２は、本発明の第１の実施形態における圧電性基板上の電極構造を示す略図的平面図である。FIG. 2 is a schematic plan view showing an electrode structure on a piezoelectric substrate according to the first embodiment of the present invention. 図３は、本発明の第１の実施形態におけるＩＤＴ電極の電極構造を示す模式的平面図である。FIG. 3 is a schematic plan view showing the electrode structure of the IDT electrode according to the first embodiment of the present invention. 図４は、本発明の第１の実施形態における圧電性基板、支持部材及びカバー部材の一部を示す模式的正面断面図である。FIG. 4 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member according to the first embodiment of the present invention. 図５は、本発明の第１の実施形態におけるカバー部材上の電極構造を示す略図的平面図である。FIG. 5 is a schematic plan view showing an electrode structure on a cover member according to the first embodiment of the present invention. 図６は、本発明の第１の実施形態に係る弾性波装置の略図的平面図である。FIG. 6 is a schematic plan view of the elastic wave device according to the first embodiment of the present invention. 図７は、本発明の第１の実施形態において、カバー部材と支持部材との間及び支持部材と圧電性基板との間に加わる応力を説明するための模式的正面断面図である。FIG. 7 is a schematic front sectional view for explaining the stress applied between the cover member and the support member and between the support member and the piezoelectric substrate in the first embodiment of the present invention. 図８は、本発明の第１の実施形態の第１の変形例における圧電性基板、支持部材及びカバー部材の一部を示す模式的正面断面図である。FIG. 8 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member in the first modification of the first embodiment of the present invention. 図９は、本発明の第１の実施形態の第２の変形例における支持部材の一部を示す模式的正面断面図である。FIG. 9 is a schematic front sectional view showing a part of a support member in a second modification of the first embodiment of the present invention. 図１０は、本発明の第２の実施形態における圧電性基板、支持部材及びカバー部材の一部を示す模式的正面断面図である。FIG. 10 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member according to the second embodiment of the present invention. 図１１は、本発明の第３の実施形態に係る弾性波装置の模式的正面断面図である。FIG. 11 is a schematic front sectional view of an elastic wave device according to a third embodiment of the present invention. 図１２は、本発明の第３の実施形態における圧電性基板、支持部材及びカバー部材の一部を示す模式的正面断面図である。FIG. 12 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member according to the third embodiment of the present invention. 図１３は、本発明の第３の実施形態におけるカバー部材を示す略図的平面図である。FIG. 13 is a schematic plan view showing a cover member according to a third embodiment of the present invention. 図１４は、本発明の第３の実施形態において、カバー部材と支持部材との間及び支持部材と圧電性基板との間に加わる応力を説明するための模式的正面断面図である。FIG. 14 is a schematic front sectional view for explaining the stress applied between the cover member and the support member and between the support member and the piezoelectric substrate in the third embodiment of the present invention. 図１５は、本発明の第３の実施形態の変形例に係る弾性波装置の模式的正面断面図である。FIG. 15 is a schematic front sectional view of an elastic wave device according to a modified example of the third embodiment of the present invention. 図１６は、本発明の第４の実施形態に係る弾性波装置の模式的正面断面図である。FIG. 16 is a schematic front sectional view of an elastic wave device according to a fourth embodiment of the present invention.
　以下、図面を参照しつつ、本発明の具体的な実施形態を説明することにより、本発明を明らかにする。 Hereinafter, the present invention will be clarified by explaining a specific embodiment of the present invention with reference to the drawings.
　なお、本明細書に記載の各実施形態は、例示的なものであり、異なる実施形態間において、構成の部分的な置換または組み合わせが可能であることを指摘しておく。 It should be noted that each of the embodiments described herein is exemplary and that partial replacement or combination of configurations is possible between different embodiments.
　図１は、本発明の第１の実施形態に係る弾性波装置の模式的正面断面図である。 FIG. 1 is a schematic front sectional view of an elastic wave device according to a first embodiment of the present invention.
　弾性波装置１は圧電性基板２を有する。圧電性基板２は主面２ａを有する。本実施形態では、圧電性基板２は圧電体層のみからなる圧電基板である。圧電体層の材料としては、例えば、タンタル酸リチウム、ニオブ酸リチウム、酸化亜鉛、窒化アルミニウム、水晶、またはＰＺＴなどを用いることができる。なお、圧電性基板２は、圧電体層以外の層を有する積層基板であってもよい。 The elastic wave device 1 has a piezoelectric substrate 2. The piezoelectric substrate 2 has a main surface 2a. In the present embodiment, the piezoelectric substrate 2 is a piezoelectric substrate composed of only a piezoelectric layer. As the material of the piezoelectric layer, for example, lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, quartz, PZT or the like can be used. The piezoelectric substrate 2 may be a laminated substrate having a layer other than the piezoelectric layer.
　本実施形態の圧電性基板２は、平面視において、矩形の形状を有する。なお、圧電性基板２の形状は上記に限定されない。本明細書において平面視とは、図１などの上方から見る方向をいう。 The piezoelectric substrate 2 of this embodiment has a rectangular shape in a plan view. The shape of the piezoelectric substrate 2 is not limited to the above. In the present specification, the plan view means a direction viewed from above as shown in FIG.
　図２は、第１の実施形態における圧電性基板上の電極構造を示す略図的平面図である。図２においては、後述するＩＤＴ電極や反射器を、矩形に２本の対角線を加えた略図により示す。 FIG. 2 is a schematic plan view showing the electrode structure on the piezoelectric substrate in the first embodiment. In FIG. 2, the IDT electrode and the reflector, which will be described later, are shown by a schematic diagram in which two diagonal lines are added to a rectangle.
　圧電性基板２の主面２ａ上には複数の励振電極が設けられている。より具体的には、励振電極は、本実施形態ではＩＤＴ電極３である。なお、励振電極は、少なくとも１つ設けられていればよい。図１は、図２中のＩ－Ｉ線に沿う断面に相当する部分を、圧電性基板２の一辺に平行な方向から見た図である。 A plurality of excitation electrodes are provided on the main surface 2a of the piezoelectric substrate 2. More specifically, the excitation electrode is the IDT electrode 3 in this embodiment. It is sufficient that at least one excitation electrode is provided. FIG. 1 is a view of a portion corresponding to a cross section along the line II in FIG. 2 as viewed from a direction parallel to one side of the piezoelectric substrate 2.
　図３は、第１の実施形態におけるＩＤＴ電極の電極構造を示す模式的平面図である。なお、図３においては、ＩＤＴ電極に接続されている配線電極などを省略している。 FIG. 3 is a schematic plan view showing the electrode structure of the IDT electrode in the first embodiment. In FIG. 3, the wiring electrode and the like connected to the IDT electrode are omitted.
　ＩＤＴ電極３は、対向し合う第１のバスバー１６及び第２のバスバー１７と、複数の第１の電極指１８及び複数の第２の電極指１９とを有する。複数の第１の電極指１８のそれぞれの一端は、第１のバスバー１６に接続されている。複数の第２の電極指１９のそれぞれの一端は、第２のバスバー１７に接続されている。複数の第１の電極指１８と複数の第２の電極指１９とは互いに間挿し合っている。ＩＤＴ電極３の複数の第１の電極指１８及び複数の第２の電極指１９は、図１の奥行方向に延びる。 The IDT electrode 3 has a first bus bar 16 and a second bus bar 17 facing each other, and a plurality of first electrode fingers 18 and a plurality of second electrode fingers 19. One end of each of the plurality of first electrode fingers 18 is connected to the first bus bar 16. One end of each of the plurality of second electrode fingers 19 is connected to the second bus bar 17. The plurality of first electrode fingers 18 and the plurality of second electrode fingers 19 are interleaved with each other. The plurality of first electrode fingers 18 and the plurality of second electrode fingers 19 of the IDT electrode 3 extend in the depth direction of FIG.
　ＩＤＴ電極３に信号電力を印加することにより、弾性表面波が励振される。圧電性基板２上における、ＩＤＴ電極３の弾性波伝搬方向両側には、一対の反射器１４及び反射器１５が設けられている。ＩＤＴ電極３、反射器１４及び反射器１５は、複数の金属層が積層された積層金属膜からなっていてもよく、単層の金属膜からなっていてもよい。 Surface acoustic waves are excited by applying signal power to the IDT electrode 3. A pair of reflectors 14 and reflectors 15 are provided on both sides of the IDT electrode 3 in the elastic wave propagation direction on the piezoelectric substrate 2. The IDT electrode 3, the reflector 14, and the reflector 15 may be made of a laminated metal film in which a plurality of metal layers are laminated, or may be made of a single-layer metal film.
　このように、本実施形態の弾性波装置１はＳＡＷ（Ｓｕｒｆａｃｅ　Ａｃｏｕｓｔｉｃ　Ｗａｖｅ）素子である。もっとも、本発明に係る弾性波装置は、ＢＡＷ（Ｂｕｌｋ　Ａｃｏｕｓｔｉｃ　Ｗａｖｅ）素子であってもよい。あるいは、本発明に係る弾性波装置は、ＳＡＷまたはＢＡＷを利用する複数の弾性波共振子を有するラダー型フィルタやマルチプレクサなどであってもよい。 As described above, the surface acoustic wave device 1 of the present embodiment is a SAW (Surface Acoustic Wave) element. However, the elastic wave device according to the present invention may be a BAW (Bulk Acoustic Wave) element. Alternatively, the elastic wave device according to the present invention may be a ladder type filter or a multiplexer having a plurality of elastic wave resonators utilizing SAW or BAW.
　図１に戻り、圧電性基板２の主面２ａ上には、開口部４ｋを有する枠状の支持部材４が設けられている。支持部材４は、開口部４ｋによりＩＤＴ電極３を囲むように設けられている。支持部材４は、対向し合う第１の端面４ａ及び第２の端面４ｂを有する。第１の端面４ａが圧電性基板２側に位置する端面である。支持部材４は外側面４ｃ及び内側面４ｄを有する。外側面４ｃ及び内側面４ｄは、第１の端面４ａと第２の端面４ｂとを接続する面である。本実施形態では、支持部材４は感光性樹脂からなる。なお、支持部材４の材料は上記に限定されない。 Returning to FIG. 1, a frame-shaped support member 4 having an opening 4k is provided on the main surface 2a of the piezoelectric substrate 2. The support member 4 is provided so as to surround the IDT electrode 3 by the opening 4k. The support member 4 has a first end face 4a and a second end face 4b facing each other. The first end face 4a is an end face located on the piezoelectric substrate 2 side. The support member 4 has an outer surface 4c and an inner surface 4d. The outer side surface 4c and the inner side surface 4d are surfaces that connect the first end surface 4a and the second end surface 4b. In the present embodiment, the support member 4 is made of a photosensitive resin. The material of the support member 4 is not limited to the above.
　支持部材４の第２の端面４ｂ上には、開口部４ｋを覆うように、カバー部材５が設けられている。本実施形態では、カバー部材５は感光性樹脂からなる。なお、カバー部材５の材料は上記に限定されない。 A cover member 5 is provided on the second end surface 4b of the support member 4 so as to cover the opening 4k. In the present embodiment, the cover member 5 is made of a photosensitive resin. The material of the cover member 5 is not limited to the above.
　図４は、第１の実施形態における圧電性基板、支持部材及びカバー部材の一部を示す模式的正面断面図である。図４においては、圧電性基板、支持部材及びカバー部材以外を省略している。図４以外の模式的正面断面図においても、圧電性基板、支持部材及びカバー部材以外を省略することがある。 FIG. 4 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member in the first embodiment. In FIG. 4, parts other than the piezoelectric substrate, the support member, and the cover member are omitted. Also in the schematic front sectional view other than FIG. 4, parts other than the piezoelectric substrate, the support member, and the cover member may be omitted.
　図４に示す断面視において、圧電性基板２の主面２ａに対して平行な方向における、外側面４ｃと内側面４ｄとの距離を、支持部材４の幅とする。支持部材４の内側面４ｄは、第２の端面４ｂに向かうほど支持部材４の幅が細くなるように傾斜しており、第２の端面４ｂに至っている第１の傾斜部４ｈを有する。同様に、支持部材４の外側面４ｃも、第２の端面４ｂに向かうほど支持部材４の幅が細くなるように傾斜しており、第２の端面４ｂに至っている第１の傾斜部４ｅを有する。なお、少なくとも内側面４ｄが第１の傾斜部４ｈを有していればよい。カバー部材５は、支持部材４の第２の端面４ｂから内側面４ｄの第１の傾斜部４ｈに至っている。 In the cross-sectional view shown in FIG. 4, the distance between the outer surface 4c and the inner surface 4d in the direction parallel to the main surface 2a of the piezoelectric substrate 2 is defined as the width of the support member 4. The inner side surface 4d of the support member 4 is inclined so that the width of the support member 4 becomes narrower toward the second end surface 4b, and has a first inclined portion 4h that reaches the second end surface 4b. Similarly, the outer surface 4c of the support member 4 is also inclined so that the width of the support member 4 becomes narrower toward the second end surface 4b, and the first inclined portion 4e reaching the second end surface 4b is formed. Have. It is sufficient that at least the inner side surface 4d has the first inclined portion 4h. The cover member 5 reaches from the second end surface 4b of the support member 4 to the first inclined portion 4h of the inner side surface 4d.
　支持部材４は、第１の端面４ａと第２の端面４ｂとの間に位置する細幅部４Ｘを有する。より具体的には、内側面４ｄが、第２の端面４ｂ側から第１の端面４ａ側に向かうほど、支持部材４の幅が細くなるように傾斜している第２の傾斜部４ｉと、第１の端面４ａ側から第２の端面４ｂ側に向かうほど、支持部材４の幅が細くなるように傾斜している第３の傾斜部４ｊとを有する。同様に、外側面４ｃも、第２の端面４ｂ側から第１の端面４ａ側に向かうほど、支持部材４の幅が細くなるように傾斜している第２の傾斜部４ｆと、第１の端面４ａ側から第２の端面４ｂ側に向かうほど、支持部材４の幅が細くなるように傾斜している第３の傾斜部４ｇとを有する。外側面４ｃの第２の傾斜部４ｆ及び第３の傾斜部４ｇ並びに内側面４ｄの第２の傾斜部４ｉ及び第３の傾斜部４ｊにより、細幅部４Ｘが構成されている。なお、細幅部４Ｘの構成は上記に限定されず、細幅部４Ｘの幅が他の部分よりも細ければよい。もっとも、細幅部４Ｘは、支持部材４において最も幅が細い部分ではなくともよい。 The support member 4 has a narrow portion 4X located between the first end surface 4a and the second end surface 4b. More specifically, the second inclined portion 4i in which the inner side surface 4d is inclined so that the width of the support member 4 becomes narrower from the second end surface 4b side toward the first end surface 4a side. It has a third inclined portion 4j that is inclined so that the width of the support member 4 becomes narrower toward the second end surface 4b side from the first end surface 4a side. Similarly, the outer surface 4c also has the second inclined portion 4f, which is inclined so that the width of the support member 4 becomes narrower toward the first end surface 4a side from the second end surface 4b side, and the first It has a third inclined portion 4g that is inclined so that the width of the support member 4 becomes narrower toward the second end surface 4b side from the end surface 4a side. The narrow portion 4X is composed of the second inclined portion 4f and the third inclined portion 4g of the outer side surface 4c, and the second inclined portion 4i and the third inclined portion 4j of the inner side surface 4d. The configuration of the narrow width portion 4X is not limited to the above, and the width of the narrow width portion 4X may be narrower than that of other portions. However, the narrow portion 4X does not have to be the narrowest portion in the support member 4.
　本実施形態においては、第１の傾斜部、第２の傾斜部及び第３の傾斜部は、図４に示す断面視において直線状に傾斜しているが、曲線状に傾斜していてもよい。 In the present embodiment, the first inclined portion, the second inclined portion, and the third inclined portion are inclined linearly in the cross-sectional view shown in FIG. 4, but may be inclined in a curved shape. ..
　図１に戻り、圧電性基板２の主面２ａ上には、ＩＤＴ電極３に電気的に接続されている第１の配線電極６Ａが設けられている。支持部材４は、第１の配線電極６Ａの一部を覆うように設けられている。支持部材４及びカバー部材５を貫通するように、複数の開口部１２が設けられている。各開口部１２内にビア電極７が設けられている。 Returning to FIG. 1, a first wiring electrode 6A electrically connected to the IDT electrode 3 is provided on the main surface 2a of the piezoelectric substrate 2. The support member 4 is provided so as to cover a part of the first wiring electrode 6A. A plurality of openings 12 are provided so as to penetrate the support member 4 and the cover member 5. A via electrode 7 is provided in each opening 12.
　図５は、第１の実施形態におけるカバー部材上の電極構造を示す略図的平面図である。図６は、第１の実施形態に係る弾性波装置の略図的平面図である。なお、図５においては、カバー部材などを省略している。 FIG. 5 is a schematic plan view showing the electrode structure on the cover member in the first embodiment. FIG. 6 is a schematic plan view of the elastic wave device according to the first embodiment. In FIG. 5, the cover member and the like are omitted.
　図１及び図５に示すように、カバー部材５上に、ビア電極７の一端に接続されるように、第２の配線電極６Ｂが設けられている。なお、ビア電極７の他端は第１の配線電極６Ａに接続されている。図１及び図６に示すように、圧電性基板２の主面２ａ上には、支持部材４、カバー部材５及び第２の配線電極６Ｂを覆うように、封止樹脂層１３が設けられている。封止樹脂層１３を貫通し、一端が第２の配線電極６Ｂに接続されるように、アンダーバンプメタル層８が設けられている。アンダーバンプメタル層８の他端に接合されるように、バンプ９が設けられている。バンプ９は、例えば、半田からなる。 As shown in FIGS. 1 and 5, a second wiring electrode 6B is provided on the cover member 5 so as to be connected to one end of the via electrode 7. The other end of the via electrode 7 is connected to the first wiring electrode 6A. As shown in FIGS. 1 and 6, a sealing resin layer 13 is provided on the main surface 2a of the piezoelectric substrate 2 so as to cover the support member 4, the cover member 5, and the second wiring electrode 6B. There is. The underbump metal layer 8 is provided so as to penetrate the sealing resin layer 13 and connect one end to the second wiring electrode 6B. The bump 9 is provided so as to be joined to the other end of the under bump metal layer 8. The bump 9 is made of, for example, solder.
　図１に示すように、上記ＩＤＴ電極３は、圧電性基板２、支持部材４及びカバー部材５により囲まれた中空空間内に配置されている。ＩＤＴ電極３は、第１の配線電極６Ａ、ビア電極７、第２の配線電極６Ｂ、アンダーバンプメタル層８及びバンプ９を介して外部に電気的に接続される。このように、弾性波装置１はＷＬＰ（Ｗａｆｅｒ　Ｌｅｖｅｌ　Ｐａｃｋａｇｅ）構造である。 As shown in FIG. 1, the IDT electrode 3 is arranged in a hollow space surrounded by a piezoelectric substrate 2, a support member 4, and a cover member 5. The IDT electrode 3 is electrically connected to the outside via a first wiring electrode 6A, a via electrode 7, a second wiring electrode 6B, an under bump metal layer 8 and a bump 9. As described above, the elastic wave device 1 has a WLP (Wafer Level Package) structure.
　本実施形態の特徴は、支持部材４が第１の端面４ａと第２の端面４ｂとの間に位置する細幅部４Ｘを有し、支持部材４の内側面４ｄが第１の傾斜部４ｈを有し、カバー部材５が、支持部材４の第２の端面４ｂから第１の傾斜部４ｈに至っていることにある。それによって、支持部材４からのカバー部材５の剥離を抑制することができ、かつ圧電性基板２からの支持部材４の剥離を抑制することができる。これを以下において説明する。 The feature of this embodiment is that the support member 4 has a narrow portion 4X located between the first end surface 4a and the second end surface 4b, and the inner side surface 4d of the support member 4 is the first inclined portion 4h. The cover member 5 extends from the second end surface 4b of the support member 4 to the first inclined portion 4h. As a result, the peeling of the cover member 5 from the support member 4 can be suppressed, and the peeling of the support member 4 from the piezoelectric substrate 2 can be suppressed. This will be described below.
　支持部材４の内側面４ｄが第１の傾斜部４ｈを有するため、支持部材４の幅は第２の端面４ｂに向かうほど細くなっている。それによって、支持部材４がカバー部材５に刺さり込み易い。加えて、第１の傾斜部４ｈにおける面が、カバー部材５側に位置しているため、カバー部材５と第１の傾斜部４ｈとを好適に接合させることができる。これにより、カバー部材５と支持部材４との接合面積を大きくすることができ、カバー部材５と支持部材４との接合力を高めることができる。よって、カバー部材５が支持部材４から剥離し難い。 Since the inner side surface 4d of the support member 4 has the first inclined portion 4h, the width of the support member 4 becomes narrower toward the second end surface 4b. As a result, the support member 4 easily sticks into the cover member 5. In addition, since the surface of the first inclined portion 4h is located on the cover member 5 side, the cover member 5 and the first inclined portion 4h can be suitably joined. As a result, the joining area between the cover member 5 and the support member 4 can be increased, and the joining force between the cover member 5 and the support member 4 can be increased. Therefore, the cover member 5 is difficult to peel off from the support member 4.
　図７は、第１の実施形態において、カバー部材と支持部材との間及び支持部材と圧電性基板との間に加わる応力を説明するための模式的正面断面図である。 FIG. 7 is a schematic front sectional view for explaining the stress applied between the cover member and the support member and between the support member and the piezoelectric substrate in the first embodiment.
　例えば、カバー部材５が温度変化などにより収縮した場合においては、カバー部材５と支持部材４との間において、図７に示すように応力Ａが加わる。応力Ａにおける、圧電性基板２の主面２ａに垂直な方向の力の成分Ａ１は、支持部材４からカバー部材５を剥離する方向の成分となっている。カバー部材５と支持部材４との接合面積が大きい場合には特に応力Ａは大きくなる。カバー部材５の収縮により、さらに、支持部材４と圧電性基板２との間にも応力が加わることとなる。該応力における、圧電性基板２の主面２ａに垂直な方向の力の成分Ｂ１も、圧電性基板２からカバー部材５を剥離する方向の成分となっている。 For example, when the cover member 5 contracts due to a temperature change or the like, a stress A is applied between the cover member 5 and the support member 4 as shown in FIG. The component A1 of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress A is a component in the direction of peeling the cover member 5 from the support member 4. The stress A is particularly large when the joint area between the cover member 5 and the support member 4 is large. Due to the contraction of the cover member 5, stress is further applied between the support member 4 and the piezoelectric substrate 2. The component B1 of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress is also a component in the direction of peeling the cover member 5 from the piezoelectric substrate 2.
　ここで、本実施形態においては、支持部材４は細幅部４Ｘを有する。それによって、応力を細幅部４Ｘに集中させることができ、支持部材４と圧電性基板２との間に加わる応力を緩和することができる。従って、上記のように、カバー部材５が支持部材４から剥離し難いことに加えて、支持部材４が圧電性基板２から剥離し難い。 Here, in the present embodiment, the support member 4 has a narrow portion 4X. As a result, the stress can be concentrated on the narrow portion 4X, and the stress applied between the support member 4 and the piezoelectric substrate 2 can be relaxed. Therefore, as described above, in addition to the cover member 5 being difficult to peel off from the support member 4, the support member 4 is hard to peel off from the piezoelectric substrate 2.
　カバー部材５が感光性樹脂からなる場合には、カバー部材５を硬化させるに際し、カバー部材５が収縮する。そのため、支持部材４と圧電性基板２との間に加わる応力が特に大きくなる。本発明においては、支持部材４と圧電性基板２との間に加わる応力を緩和することができるため、本発明はカバー部材５が感光性樹脂からなる場合には特に好適である。 When the cover member 5 is made of a photosensitive resin, the cover member 5 shrinks when the cover member 5 is cured. Therefore, the stress applied between the support member 4 and the piezoelectric substrate 2 becomes particularly large. In the present invention, since the stress applied between the support member 4 and the piezoelectric substrate 2 can be relaxed, the present invention is particularly suitable when the cover member 5 is made of a photosensitive resin.
　本実施形態においては、支持部材４の細幅部４Ｘは、外側面４ｃ及び内側面４ｄの両方における第２の傾斜部及び第３の傾斜部により構成されている。なお、細幅部４Ｘの構成は上記に限定されない。以下において、細幅部の構成のみが第１の実施形態と異なる、第１の実施形態の第１の変形例及び第２の変形例を示す。第１の変形例及び第２の変形例においても、第１の実施形態と同様に、カバー部材５が支持部材から剥離し難く、かつ支持部材が圧電性基板２から剥離し難い。 In the present embodiment, the narrow portion 4X of the support member 4 is composed of a second inclined portion and a third inclined portion on both the outer surface 4c and the inner surface 4d. The configuration of the narrow width portion 4X is not limited to the above. In the following, a first modification and a second modification of the first embodiment, in which only the configuration of the narrow portion is different from the first embodiment, will be shown. In the first modification and the second modification, as in the first embodiment, the cover member 5 is difficult to peel off from the support member, and the support member is hard to peel off from the piezoelectric substrate 2.
　図８に示す第１の変形例においては、支持部材２４Ａの第１の傾斜部４ｈ、第２の傾斜部４ｉ及び第３の傾斜部４ｊが内側面４ｄにのみ設けられていることにより、細幅部２４Ｘが構成されている。 In the first modification shown in FIG. 8, the support member 24A is thin because the first inclined portion 4h, the second inclined portion 4i, and the third inclined portion 4j are provided only on the inner side surface 4d. A width portion 24X is configured.
　図９に示す第２の変形例の支持部材２４Ｂにおいては、内側面２４ｄが第１の段差部２４ｉと、第２の段差部２４ｊとを有する。第１の段差部２４ｉは第１の端面４ａ側に位置する。第２の段差部２４ｊは第２の端面４ｂ側に位置する。第１の段差部２４ｉ及び第２の段差部２４ｊの間において、支持部材２４Ｂの幅が細くなるように、第１の段差部２４ｉ及び第２の段差部２４ｊが設けられている。同様に、外側面２４ｃは第１の段差部２４ｆと、第２の段差部２４ｇとを有する。第１の段差部２４ｆは第１の端面４ａ側に位置する。第２の段差部２４ｇは第２の端面４ｂ側に位置する。第１の段差部２４ｆ及び第２の段差部２４ｇの間において、支持部材２４Ｂの幅が細くなるように、第１の段差部２４ｆ及び第２の段差部２４ｇが設けられている。上記各段差部が設けられていることにより細幅部２４Ｙが構成されている。より具体的には、上記各段差部は一段の段差として構成されている。なお、各段差部は複数の段差を有する階段状の形状を有していてもよい。外側面２４ｃ及び内側面２４ｄのうち一方が第１の段差部及び第２の段差部を有していてもよい。 In the support member 24B of the second modified example shown in FIG. 9, the inner side surface 24d has a first step portion 24i and a second step portion 24j. The first step portion 24i is located on the first end surface 4a side. The second step portion 24j is located on the second end surface 4b side. Between the first step portion 24i and the second step portion 24j, the first step portion 24i and the second step portion 24j are provided so that the width of the support member 24B becomes narrower. Similarly, the outer surface 24c has a first step portion 24f and a second step portion 24g. The first step portion 24f is located on the first end surface 4a side. The second step portion 24g is located on the second end surface 4b side. Between the first step portion 24f and the second step portion 24g, the first step portion 24f and the second step portion 24g are provided so that the width of the support member 24B becomes narrower. The narrow portion 24Y is configured by providing each of the above-mentioned step portions. More specifically, each of the above-mentioned step portions is configured as a single step. In addition, each step portion may have a step-like shape having a plurality of steps. One of the outer side surface 24c and the inner side surface 24d may have a first step portion and a second step portion.
　図４に示す本実施形態のように、支持部材４の細幅部４Ｘにおける最も幅が細い部分の位置が、第２の端面４ｂよりも第１の端面４ａに近いことが好ましい。それによって、細幅部４Ｘに応力をより一層集中させることができ、支持部材４と圧電性基板２との間に加わる応力をより一層緩和することができる。従って、支持部材４が圧電性基板２からより一層剥離し難い。 As in the present embodiment shown in FIG. 4, it is preferable that the position of the narrowest portion of the support member 4 in the narrow portion 4X is closer to the first end surface 4a than to the second end surface 4b. As a result, the stress can be further concentrated on the narrow width portion 4X, and the stress applied between the support member 4 and the piezoelectric substrate 2 can be further relaxed. Therefore, the support member 4 is more difficult to peel off from the piezoelectric substrate 2.
　図１０は、第２の実施形態における圧電性基板、支持部材及びカバー部材の一部を示す模式的正面断面図である。 FIG. 10 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member in the second embodiment.
　本実施形態は、支持部材３４における外側面３４ｃ及び内側面３４ｄの構成が第１の実施形態と異なる。上記の点以外においては、本実施形態の弾性波装置は第１の実施形態の弾性波装置１と同様の構成を有する。 In this embodiment, the configurations of the outer surface 34c and the inner surface 34d of the support member 34 are different from those of the first embodiment. Except for the above points, the elastic wave device of the present embodiment has the same configuration as the elastic wave device 1 of the first embodiment.
　より具体的には、第１の端面４ａは第１の内周縁３４ｌを有し、第２の端面４ｂは第２の内周縁３４ｍを有する。図１０中の一点鎖線Ｃは第１の内周縁３４ｌの位置を示し、一点鎖線Ｄは第２の内周縁３４ｍの位置を示す。平面視において、カバー部材５の中央部から見て、第１の内周縁３４ｌが第２の内周縁３４ｍの外側に位置する。それによって、圧電性基板２、支持部材３４及びカバー部材５により囲まれた中空空間内における、圧電性基板２の面積を大きくすることができる。従って、弾性波装置の小型化を進めることができる。なお、平面視において、第１の内周縁３４ｌと第２の内周縁３４ｍとは重なっていてもよく、あるいは、第１の内周縁３４ｌが第２の内周縁３４ｍの内側に位置していてもよい。本明細書において平面視とは、図１０や図１などの上方から見る方向をいう。 More specifically, the first end face 4a has a first inner peripheral edge 34l, and the second end face 4b has a second inner peripheral edge 34m. The alternate long and short dash line C in FIG. 10 indicates the position of the first inner peripheral edge 34l, and the alternate long and short dash line D indicates the position of the second inner peripheral edge 34m. In a plan view, the first inner peripheral edge 34l is located outside the second inner peripheral edge 34m when viewed from the central portion of the cover member 5. Thereby, the area of the piezoelectric substrate 2 in the hollow space surrounded by the piezoelectric substrate 2, the support member 34, and the cover member 5 can be increased. Therefore, the size of the elastic wave device can be reduced. In a plan view, the first inner peripheral edge 34l and the second inner peripheral edge 34m may overlap, or the first inner peripheral edge 34l may be located inside the second inner peripheral edge 34m. Good. In the present specification, the plan view means a direction viewed from above such as FIG. 10 and FIG.
　加えて、本実施形態においても、支持部材３４は細幅部４Ｘを有するため、第１の実施形態と同様に、圧電性基板２から支持部材３４が剥離し難い。 In addition, also in this embodiment, since the support member 34 has the narrow portion 4X, it is difficult for the support member 34 to peel off from the piezoelectric substrate 2 as in the first embodiment.
　図１１は、第３の実施形態に係る弾性波装置の模式的正面断面図である。 FIG. 11 is a schematic front sectional view of the elastic wave device according to the third embodiment.
　本実施形態は、カバー部材４５の構成が第１の実施形態と異なる。上記以外の点においては、本実施形態の弾性波装置は第１の実施形態の弾性波装置１と同様の構成を有する。 In this embodiment, the configuration of the cover member 45 is different from that of the first embodiment. In points other than the above, the elastic wave device of the present embodiment has the same configuration as the elastic wave device 1 of the first embodiment.
　より具体的には、カバー部材４５は、支持部材４に接合されている接合部４５ｃを有する。接合部４５ｃは、支持部材４の第２の端面４ｂ及び第１の傾斜部４ｈに接合されている部分である。本実施形態では、接合部４５ｃはカバー部材４５の外周部に位置する。 More specifically, the cover member 45 has a joint portion 45c that is joined to the support member 4. The joint portion 45c is a portion joined to the second end surface 4b and the first inclined portion 4h of the support member 4. In the present embodiment, the joint portion 45c is located on the outer peripheral portion of the cover member 45.
　支持部材４の第２の端面４ｂは、カバー部材４５に接合されていない部分を有する。このように、カバー部材４５は、開口部４ｋを覆っていればよく、第２の端面４ｂの少なくとも一部に接合されていればよい。さらに、カバー部材４５は中央部４５ａを有する。 The second end surface 4b of the support member 4 has a portion that is not joined to the cover member 45. As described above, the cover member 45 may cover the opening 4k and may be joined to at least a part of the second end surface 4b. Further, the cover member 45 has a central portion 45a.
　図１２は、第３の実施形態における圧電性基板、支持部材及びカバー部材の一部を示す模式的正面断面図である。 FIG. 12 is a schematic front sectional view showing a part of the piezoelectric substrate, the support member, and the cover member in the third embodiment.
　カバー部材４５における中央部４５ａと、圧電性基板２との高さ方向の距離をＺ１とし、接合部４５ｃの下端と、圧電性基板２との高さ方向の距離をＺ２とする。なお、本実施形態では、距離Ｚ２は、接合部４５ｃにおける支持部材４の第１の傾斜部４ｈに至っている部分の下端と、圧電性基板２との高さ方向の距離である。ここで、カバー部材４５は下垂部４５ｂを有する。下垂部４５ｂは、中央部４５ａと接合部４５ｃとの間に位置する。下垂部４５ｂと圧電性基板２との距離は、距離Ｚ１及び距離Ｚ２よりも短い。下垂部４５ｂと圧電性基板２との高さ方向の距離をＺ３としたとき、Ｚ３＜Ｚ１であり、かつＺ３＜Ｚ２である。 The distance between the central portion 45a of the cover member 45 and the piezoelectric substrate 2 in the height direction is Z1, and the distance between the lower end of the joint portion 45c and the piezoelectric substrate 2 in the height direction is Z2. In the present embodiment, the distance Z2 is the distance in the height direction between the lower end of the portion of the joint portion 45c that reaches the first inclined portion 4h of the support member 4 and the piezoelectric substrate 2. Here, the cover member 45 has a hanging portion 45b. The hanging portion 45b is located between the central portion 45a and the joint portion 45c. The distance between the hanging portion 45b and the piezoelectric substrate 2 is shorter than the distance Z1 and the distance Z2. When the distance between the hanging portion 45b and the piezoelectric substrate 2 in the height direction is Z3, Z3 <Z1 and Z3 <Z2.
　図１３は、第３の実施形態におけるカバー部材を示す略図的平面図である。 FIG. 13 is a schematic plan view showing the cover member according to the third embodiment.
　平面視において、カバー部材４５の中央部４５ａを軸としたときの周回方向に沿って、接合部４５ｃが連続的に設けられている。接合部４５ｃと中央部４５ａとの間の周回方向における全ての部分において、下垂部４５ｂが設けられている。圧電性基板２の主面２ａに垂直な方向に沿う断面においては、カバー部材４５の一方端側の接合部４５ｃと中央部４５ａとの間及び他方端側の接合部４５ｃと中央部４５ａとの間の両方に、下垂部４５ｂが位置する。 In a plan view, the joint portion 45c is continuously provided along the circumferential direction when the central portion 45a of the cover member 45 is used as an axis. A drooping portion 45b is provided at all portions in the circumferential direction between the joint portion 45c and the central portion 45a. In the cross section along the direction perpendicular to the main surface 2a of the piezoelectric substrate 2, between the joint portion 45c on one end side and the central portion 45a of the cover member 45 and between the joint portion 45c and the central portion 45a on the other end side. The drooping portion 45b is located in both of them.
　図１２に示すように、カバー部材４５は、接合部４５ｃにおける第１の傾斜部４ｈに至っている部分と下垂部４５ｂとの間において、カバー部材４５と圧電性基板２との距離が、距離Ｚ２及び距離Ｚ３よりも長い部分を有する。該部分から下垂部４５ｂ側に向かうほど、カバー部材４５と圧電性基板２との距離は短くなっている。他方、カバー部材４５と圧電性基板２との距離は、下垂部４５ｂから中央部４５ａ側に向かうほど長くなっている。本実施形態では、カバー部材４５の各部分と圧電性基板２との距離のうち、距離Ｚ１が最も長い。なお、これに限られず、例えば、Ｚ１＜Ｚ２であってもよい。 As shown in FIG. 12, in the cover member 45, the distance between the cover member 45 and the piezoelectric substrate 2 is the distance Z2 between the portion of the joint portion 45c that reaches the first inclined portion 4h and the hanging portion 45b. And has a portion longer than the distance Z3. The distance between the cover member 45 and the piezoelectric substrate 2 becomes shorter toward the hanging portion 45b side from the portion. On the other hand, the distance between the cover member 45 and the piezoelectric substrate 2 becomes longer from the hanging portion 45b toward the central portion 45a. In the present embodiment, the distance Z1 is the longest among the distances between each portion of the cover member 45 and the piezoelectric substrate 2. Not limited to this, for example, Z1 <Z2 may be used.
　カバー部材４５は、例えば、成形型などを用いて、接合部４５ｃとなる部分、下垂部４５ｂ及び中央部４５ａを有するように成形することにより形成してもよい。このように、カバー部材４５を別途形成した後、カバー部材４５を支持部材４に接合してもよい。このとき、例えば、接着剤によりカバー部材４５と支持部材４とを接合してもよい。なお、カバー部材４５の形成の方法やカバー部材４５と支持部材４との接合の方法は上記に限定されない。 The cover member 45 may be formed by molding, for example, using a molding die or the like so as to have a portion to be a joint portion 45c, a hanging portion 45b, and a central portion 45a. In this way, after the cover member 45 is separately formed, the cover member 45 may be joined to the support member 4. At this time, for example, the cover member 45 and the support member 4 may be joined with an adhesive. The method of forming the cover member 45 and the method of joining the cover member 45 and the support member 4 are not limited to the above.
　図１４は、第３の実施形態において、カバー部材と支持部材との間及び支持部材と圧電性基板との間に加わる応力を説明するための模式的正面断面図である。 FIG. 14 is a schematic front sectional view for explaining the stress applied between the cover member and the support member and between the support member and the piezoelectric substrate in the third embodiment.
　上述したように、カバー部材４５は、中央部４５ａと接合部４５ｃとの間に位置する下垂部４５ｂを有する。これにより、カバー部材４５が収縮した場合においては、カバー部材４５と支持部材４との間において、図１４に示すように、応力Ｅが加わる。応力Ｅにおける、圧電性基板２の主面２ａに垂直な方向の力の成分Ｅ１は、支持部材４にカバー部材４５を密着させる方向の成分となっている。従って、支持部材４からカバー部材４５が剥離し難い。 As described above, the cover member 45 has a hanging portion 45b located between the central portion 45a and the joint portion 45c. As a result, when the cover member 45 contracts, stress E is applied between the cover member 45 and the support member 4, as shown in FIG. The component E1 of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress E is a component in the direction in which the cover member 45 is brought into close contact with the support member 4. Therefore, the cover member 45 is difficult to peel off from the support member 4.
　さらに、支持部材４と圧電性基板２との間に加わる応力における、圧電性基板２の主面２ａに垂直な方向の力の成分Ｆ１も、圧電性基板２にカバー部材４５を密着させる方向の成分となっている。従って、圧電性基板２から支持部材４がより一層剥離し難い。 Further, the component F1 of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress applied between the support member 4 and the piezoelectric substrate 2 is also in the direction in which the cover member 45 is brought into close contact with the piezoelectric substrate 2. It is an ingredient. Therefore, the support member 4 is more difficult to peel off from the piezoelectric substrate 2.
　カバー部材４５における各部分と圧電性基板２との距離のうち、下垂部４５ｂと圧電性基板２との距離が最も短ければよい。例えば、図１５に示す第３の実施形態の変形例においては、下垂部４５ｂから中央部４５ａまでの部分において、カバー部材５５と圧電性基板２との距離が一定であり、Ｚ１＝Ｚ３である。 Of the distances between each part of the cover member 45 and the piezoelectric substrate 2, the distance between the hanging portion 45b and the piezoelectric substrate 2 may be the shortest. For example, in the modified example of the third embodiment shown in FIG. 15, the distance between the cover member 55 and the piezoelectric substrate 2 is constant in the portion from the hanging portion 45b to the central portion 45a, and Z1 = Z3. ..
　もっとも、図１４に示す第３の実施形態のように、カバー部材４５と圧電性基板２との距離は、下垂部４５ｂから中央部４５ａ側に向かうほど長くなっていることが好ましい。それによって、カバー部材４５に加わる応力を緩和することができる。加えて、外部からカバー部材４５をＩＤＴ電極３側に押圧する力が加わった場合において、カバー部材４５がＩＤＴ電極３に接触し難い。よって、弾性波装置が破損し難い。 However, as in the third embodiment shown in FIG. 14, it is preferable that the distance between the cover member 45 and the piezoelectric substrate 2 becomes longer from the hanging portion 45b toward the central portion 45a. Thereby, the stress applied to the cover member 45 can be relaxed. In addition, when a force for pressing the cover member 45 toward the IDT electrode 3 side is applied from the outside, it is difficult for the cover member 45 to come into contact with the IDT electrode 3. Therefore, the elastic wave device is not easily damaged.
　カバー部材４５において、下垂部４５ｂは中央部４５ａよりも接合部４５ｃに近い位置に設けられていることが好ましい。それによって、カバー部材４５と支持部材４との間に加わる応力における、圧電性基板２の主面２ａに垂直な方向の力の成分を効果的に大きくすることができる。より具体的には、該応力における支持部材４にカバー部材４５を密着させる方向の力の成分を効果的に大きくすることができ、かつ圧電性基板２に支持部材４を密着させる方向の力の成分を効果的に大きくすることができる。よって、支持部材４からのカバー部材４５の剥離を効果的に抑制することができ、かつ圧電性基板２からの支持部材４の剥離を効果的に抑制することができる。 In the cover member 45, it is preferable that the hanging portion 45b is provided at a position closer to the joint portion 45c than the central portion 45a. Thereby, the component of the force in the direction perpendicular to the main surface 2a of the piezoelectric substrate 2 in the stress applied between the cover member 45 and the support member 4 can be effectively increased. More specifically, the component of the force in the direction of bringing the cover member 45 into close contact with the support member 4 under the stress can be effectively increased, and the force in the direction of bringing the support member 4 into close contact with the piezoelectric substrate 2 can be effectively increased. The ingredients can be effectively increased. Therefore, the peeling of the cover member 45 from the support member 4 can be effectively suppressed, and the peeling of the support member 4 from the piezoelectric substrate 2 can be effectively suppressed.
　図１６は、第４の実施形態に係る弾性波装置の模式的正面断面図である。 FIG. 16 is a schematic front sectional view of the elastic wave device according to the fourth embodiment.
　本実施形態の弾性波装置６１はＢＡＷ素子である。圧電性基板６２は、支持基板６３と、圧電体層６４とを有する積層基板である。支持基板６３は、凹部６３ａと、平面視において凹部６３ａを囲んでいる支持部６３ｂとを有する。圧電体層６４は、支持基板６３の支持部６３ｂ上に設けられている。 The elastic wave device 61 of this embodiment is a BAW element. The piezoelectric substrate 62 is a laminated substrate having a support substrate 63 and a piezoelectric layer 64. The support substrate 63 has a recess 63a and a support portion 63b surrounding the recess 63a in a plan view. The piezoelectric layer 64 is provided on the support portion 63b of the support substrate 63.
　圧電体層６４は、対向し合う第１の主面６４ａ及び第２の主面６４ｂを有する。第２の主面６４ｂが支持基板６３側に位置する。圧電体層６４の第１の主面６４ａ上には第１の平板電極６５Ａが設けられており、第２の主面６４ｂ上には第２の平板電極６５Ｂが設けられている。より具体的には、圧電体層６４における、平面視において支持基板６３の凹部６３ａと重なっている部分に、第１の平板電極６５Ａ及び第２の平板電極６５Ｂが設けられている。第１の平板電極６５Ａと第２の平板電極６５Ｂとは対向し合っている。本実施形態における励振電極は、第１の平板電極６５Ａ及び第２の平板電極６５Ｂである。 The piezoelectric layer 64 has a first main surface 64a and a second main surface 64b facing each other. The second main surface 64b is located on the support substrate 63 side. A first flat plate electrode 65A is provided on the first main surface 64a of the piezoelectric layer 64, and a second flat plate electrode 65B is provided on the second main surface 64b. More specifically, the first flat plate electrode 65A and the second flat plate electrode 65B are provided in the portion of the piezoelectric layer 64 that overlaps the recess 63a of the support substrate 63 in a plan view. The first flat plate electrode 65A and the second flat plate electrode 65B face each other. The excitation electrodes in this embodiment are a first flat plate electrode 65A and a second flat plate electrode 65B.
　圧電体層６４の第１の主面６４ａ上には、第１の平板電極６５Ａに電気的に接続されている第１の配線電極６６Ａが設けられている。第２の主面６４ｂ上には、第２の平板電極６５Ｂに電気的に接続されている第１の配線電極６６Ｂが設けられている。 On the first main surface 64a of the piezoelectric layer 64, a first wiring electrode 66A electrically connected to the first flat plate electrode 65A is provided. On the second main surface 64b, a first wiring electrode 66B electrically connected to the second flat plate electrode 65B is provided.
　圧電体層６４の第１の主面６４ａ上には、第１の平板電極６５Ａを囲むように、かつ第１の配線電極６６Ａの一部を覆うように、第１の実施形態と同様の支持部材４が設けられている。支持部材４の第２の端面４ｂ上には、第１の実施形態と同様のカバー部材５が設けられている。支持部材４及びカバー部材５を貫通するように、ビア電極６７Ａが設けられている。ビア電極６７Ａの一端は第１の配線電極６６Ａに接続されている。カバー部材５上に、ビア電極６７Ａの他端に接合されるように、第２の配線電極６Ｂが設けられている。他方、圧電体層６４、支持部材４及びカバー部材５を貫通するように、ビア電極６７Ｂが設けられている。ビア電極６７Ｂの一端は第１の配線電極６６Ｂに接続されている。カバー部材５上に、ビア電極６７Ｂの他端に接続されるように、上記とは別の第２の配線電極６Ｂが設けられている。 On the first main surface 64a of the piezoelectric layer 64, the same support as in the first embodiment is provided so as to surround the first flat plate electrode 65A and to cover a part of the first wiring electrode 66A. The member 4 is provided. A cover member 5 similar to that of the first embodiment is provided on the second end surface 4b of the support member 4. A via electrode 67A is provided so as to penetrate the support member 4 and the cover member 5. One end of the via electrode 67A is connected to the first wiring electrode 66A. A second wiring electrode 6B is provided on the cover member 5 so as to be joined to the other end of the via electrode 67A. On the other hand, the via electrode 67B is provided so as to penetrate the piezoelectric layer 64, the support member 4, and the cover member 5. One end of the via electrode 67B is connected to the first wiring electrode 66B. A second wiring electrode 6B different from the above is provided on the cover member 5 so as to be connected to the other end of the via electrode 67B.
　圧電体層６４の第１の主面６４ａ上には、支持部材４、カバー部材５及び各第２の配線電極６Ｂを覆うように、封止樹脂層１３が設けられている。封止樹脂層１３を貫通し、一端が各第２の配線電極６Ｂに接続されるように、アンダーバンプメタル層８がそれぞれ設けられている。アンダーバンプメタル層８の他端に接合されるように、バンプ９が設けられている。 A sealing resin layer 13 is provided on the first main surface 64a of the piezoelectric layer 64 so as to cover the support member 4, the cover member 5, and each of the second wiring electrodes 6B. The underbump metal layer 8 is provided so as to penetrate the sealing resin layer 13 and connect one end to each of the second wiring electrodes 6B. The bump 9 is provided so as to be joined to the other end of the under bump metal layer 8.
　本実施形態の弾性波装置６１においては、第１の実施形態と同様に支持部材４及びカバー部材５が構成されている。よって、カバー部材５と支持部材４との接合力を高めることができる。さらに、カバー部材５が収縮した場合において、支持部材４と圧電性基板２との間に加わる応力を緩和することができる。従って、支持部材４からカバー部材５が剥離し難く、圧電性基板２から支持部材４が剥離し難い。 In the elastic wave device 61 of the present embodiment, the support member 4 and the cover member 5 are configured as in the first embodiment. Therefore, the bonding force between the cover member 5 and the support member 4 can be increased. Further, when the cover member 5 contracts, the stress applied between the support member 4 and the piezoelectric substrate 2 can be relaxed. Therefore, the cover member 5 is difficult to peel off from the support member 4, and the support member 4 is hard to peel off from the piezoelectric substrate 2.
１…弾性波装置
２…圧電性基板
２ａ…主面
３…ＩＤＴ電極
４…支持部材
４ａ，４ｂ…第１，第２の端面
４ｃ…外側面
４ｄ…内側面
４ｅ～４ｇ…第１～第３の傾斜部
４ｈ～４ｊ…第１～第３の傾斜部
４ｋ…開口部
４Ｘ…細幅部
５…カバー部材
６Ａ，６Ｂ…第１，第２の配線電極
７…ビア電極
８…アンダーバンプメタル層
９…バンプ
１２…開口部
１３…封止樹脂層
１４，１５…反射器
１６…第１のバスバー
１７…第２のバスバー
１８…第１の電極指
１９…第２の電極指
２４Ａ，２４Ｂ…支持部材
２４ｃ…外側面
２４ｄ…内側面
２４ｆ，２４ｇ…第１，第２の段差部
２４ｉ，２４ｊ…第１，第２の段差部
２４Ｘ，２４Ｙ…細幅部
３４…支持部材
３４ｃ…外側面
３４ｄ…内側面
３４ｌ，３４ｍ…第１，第２の内周縁
４５…カバー部材
４５ａ…中央部
４５ｂ…下垂部
４５ｃ…接合部
５５…カバー部材
６１…弾性波装置
６２…圧電性基板
６３…支持基板
６３ａ…凹部
６３ｂ…支持部
６４…圧電体層
６４ａ，６４ｂ…第１，第２の主面
６５Ａ，６５Ｂ…第１，第２の平板電極
６６Ａ，６６Ｂ…第１の配線電極
６７Ａ，６７Ｂ…ビア電極
Ａ，Ｅ…応力
Ａ１，Ｂ１，Ｅ１，Ｆ１…力の成分 1 ... Elastic wave device 2 ... Piezoelectric substrate 2a ... Main surface 3 ... IDT electrode 4 ... Support members 4a, 4b ... First and second end faces 4c ... Outer surface 4d ... Inner side surfaces 4e to 4g ... First to third 4h to 4j ... 1st to 3rd inclined portions 4k ... Opening 4X ... Narrow portion 5 ... Cover members 6A, 6B ... 1st and 2nd wiring electrodes 7 ... Via electrodes 8 ... Under bump metal layer 9 ... Bump 12 ... Opening 13 ... Sealing resin layers 14, 15 ... Reflector 16 ... First bus bar 17 ... Second bus bar 18 ... First electrode finger 19 ... Second electrode finger 24A, 24B ... Support Member 24c ... Outer surface 24d ... Inner surface surface 24f, 24g ... First and second stepped portions 24i, 24j ... First and second stepped portions 24X, 24Y ... Narrow width portion 34 ... Support member 34c ... Outer surface 34d ... Inner side surfaces 34l, 34m ... First and second inner peripheral edges 45 ... Cover member 45a ... Central portion 45b ... Drooping portion 45c ... Joint portion 55 ... Cover member 61 ... Elastic wave device 62 ... Piezoelectric substrate 63 ... Support substrate 63a ... Recessed portion 63b ... Support portion 64 ... Piezoelectric layer 64a, 64b ... First and second main surfaces 65A, 65B ... First and second flat plate electrodes 66A, 66B ... First wiring electrode 67A, 67B ... Via electrode A , E ... Stress A1, B1, E1, F1 ... Force component

Claims (7)

  1. 　圧電性基板と、
    　前記圧電性基板上に設けられている励振電極と、
    　前記励振電極を囲むように前記圧電性基板上に設けられており、開口部と、前記圧電性基板側に位置する第１の端面と、前記第１の端面に対向している第２の端面と、前記第１の端面及び前記第２の端面に接続されている外側面及び内側面と、を有する、支持部材と、
    　前記支持部材の前記開口部を覆うように、前記第２の端面上に設けられているカバー部材と、
    を備え、
    　前記圧電性基板の主面と平行な方向における前記外側面と前記内側面との距離を前記支持部材の幅としたときに、前記支持部材が、前記第１の端面と前記第２の端面との間に位置する細幅部を有し、
    　前記支持部材の前記内側面が、前記第２の端面に向かうほど前記支持部材の幅が細くなるように傾斜しており、前記第２の端面に至っている傾斜部を有し、
    　前記カバー部材が、前記支持部材の前記第２の端面から前記内側面の前記傾斜部に至っている、弾性波装置。     Piezoelectric substrate and
    Excitation electrodes provided on the piezoelectric substrate and
    A second end surface that is provided on the piezoelectric substrate so as to surround the excitation electrode, has an opening, a first end surface located on the piezoelectric substrate side, and faces the first end surface. And a support member having the first end surface and the outer surface and the inner surface connected to the second end surface.
    A cover member provided on the second end surface so as to cover the opening of the support member, and a cover member.
    With
    When the distance between the outer surface and the inner surface in the direction parallel to the main surface of the piezoelectric substrate is defined as the width of the support member, the support member is formed by the first end surface and the second end surface. Has a narrow portion located between
    The inner side surface of the support member is inclined so that the width of the support member becomes narrower toward the second end surface, and has an inclined portion that reaches the second end surface.
    An elastic wave device in which the cover member reaches the inclined portion of the inner surface surface from the second end surface of the support member.
  2. 　前記支持部材の前記細幅部における最も幅が細い部分の位置が、前記第２の端面よりも前記第１の端面に近い、請求項１に記載の弾性波装置。 The elastic wave device according to claim 1, wherein the position of the narrowest portion of the support member in the narrow portion is closer to the first end face than to the second end face.
  3. 　前記支持部材の前記内側面における前記第２の端面に至っている前記傾斜部が第１の傾斜部であり、
    　前記外側面及び前記内側面のうち少なくとも一方が、前記第２の端面側から前記第１の端面側に向かうほど前記支持部材の幅が細くなるように傾斜している第２の傾斜部と、前記第１の端面側から前記第２の端面側に向かうほど前記支持部材の幅が細くなるように傾斜している第３の傾斜部と、を有し、前記第２の傾斜部及び前記第３の傾斜部により前記細幅部が構成されている、請求項１または２に記載の弾性波装置。     The inclined portion reaching the second end surface on the inner surface of the support member is the first inclined portion.
    A second inclined portion in which at least one of the outer surface and the inner surface is inclined so that the width of the support member becomes narrower from the second end surface side toward the first end surface side. It has a third inclined portion that is inclined so that the width of the support member becomes narrower from the first end face side toward the second end face side, and the second inclined portion and the first inclined portion. The elastic wave device according to claim 1 or 2, wherein the narrow portion is formed by the inclined portion of 3.
  4. 　前記外側面及び前記内側面の両方が、前記第２の傾斜部と、前記第３の傾斜部と、を有する、請求項３に記載の弾性波装置。 The elastic wave device according to claim 3, wherein both the outer surface and the inner surface have the second inclined portion and the third inclined portion.
  5. 　前記第１の端面が第１の内周縁を有し、前記第２の端面が第２の内周縁を有し、
    　平面視において、前記第１の内周縁が前記第２の内周縁の外側に位置する、請求項１～４のいずれか１項に記載の弾性波装置。     The first end face has a first inner peripheral edge, and the second end face has a second inner peripheral edge.
    The elastic wave device according to any one of claims 1 to 4, wherein the first inner peripheral edge is located outside the second inner peripheral edge in a plan view.
  6. 　前記カバー部材が感光性樹脂からなる、請求項１～５のいずれか１項に記載の弾性波装置。 The elastic wave device according to any one of claims 1 to 5, wherein the cover member is made of a photosensitive resin.
  7. 　前記励振電極がＩＤＴ電極である、請求項１～６のいずれか１項に記載の弾性波装置。 The elastic wave device according to any one of claims 1 to 6, wherein the excitation electrode is an IDT electrode.
PCT/JP2020/025871 2019-07-10 2020-07-01 Elastic wave device WO2021006156A1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074411A (en) * 2011-09-27 2013-04-22 Kyocera Corp Acoustic wave device, electronic component and acoustic wave device manufacturing method
WO2018110057A1 (en) * 2016-12-16 2018-06-21 株式会社村田製作所 Acoustic wave device, high-frequency front-end circuit, and communication device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013074411A (en) * 2011-09-27 2013-04-22 Kyocera Corp Acoustic wave device, electronic component and acoustic wave device manufacturing method
WO2018110057A1 (en) * 2016-12-16 2018-06-21 株式会社村田製作所 Acoustic wave device, high-frequency front-end circuit, and communication device

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