WO2021092757A1 - 背板、显示基板和显示装置 - Google Patents
背板、显示基板和显示装置 Download PDFInfo
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- WO2021092757A1 WO2021092757A1 PCT/CN2019/117510 CN2019117510W WO2021092757A1 WO 2021092757 A1 WO2021092757 A1 WO 2021092757A1 CN 2019117510 W CN2019117510 W CN 2019117510W WO 2021092757 A1 WO2021092757 A1 WO 2021092757A1
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- light
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- transparent substrate
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- emitting device
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/88—Terminals, e.g. bond pads
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
Definitions
- the present disclosure relates to the field of display, in particular to a backplane, a display substrate and a display device.
- Micro-display light-emitting devices such as Micro-LED or Mini-LED
- the preparation process of the existing micro-light-emitting diode display substrate is too complicated, which affects its further promotion.
- the present disclosure proposes a backplane, a display substrate and a display device.
- the present disclosure provides a backplane, including: a transparent substrate; an electrode layer disposed on one side of the transparent substrate and including a plurality of signal transmission lines; a plurality of micro-display light emitting devices disposed on the back of the electrode layer To one side of the transparent substrate, the micro-display light-emitting device is electrically connected to the signal transmission line, and the micro-display light-emitting device can emit light toward the side of the transparent substrate; a protective layer is disposed on the micro-display light-emitting device The side facing away from the transparent substrate; the driving module is arranged on the side of the protective layer facing away from the transparent substrate, and is electrically connected to the signal transmission line.
- an opening is formed in a region of the electrode layer facing the micro display light emitting device.
- the backplane is divided into an effective area and an edge area surrounding the effective area; a part of the protective layer located in the edge area is formed with a via hole connected to the signal transmission line, and the over A connecting electrode is arranged in the hole, and the connecting electrode extends to the side of the protective layer facing away from the transparent substrate, and the driving module is connected to the signal transmission line through the connecting electrode.
- a hole-filling glue is provided in the via hole and located on the side of the connection electrode away from the transparent substrate.
- the backplane is divided into an effective area and an edge area surrounding the effective area; the part of the protective layer located in the edge area covers a side of the edge area close to the effective area,
- the signal transmission line is located in the edge area and is not covered by the protective layer and is connected to the driving module.
- the protective layer is located in a portion of the edge area, and the side of the protective layer facing away from the effective area of the display area is a sloped surface.
- the electrode layer further includes a binding electrode connected to the signal transmission line, the binding electrode includes a first sub-electrode and a second sub-electrode, the micro-display light-emitting device includes a cathode and an anode, The first sub-electrode is connected to one of the cathode and the anode, and the second sub-electrode is connected to the other of the cathode and the anode.
- the signal transmission line includes a first sub-signal line and a second sub-signal line, the first sub-signal line is connected to one of the cathode and the anode, and the second sub-signal line is connected to the The other of the cathode and anode is connected.
- all the micro-display light-emitting devices constitute a plurality of pixels, and each pixel includes at least three micro-display light-emitting devices.
- the pixel includes: a first micro-display light-emitting device configured to emit red light; a second micro-display light-emitting device configured to emit green light; and a third micro-display light-emitting device configured to emit blue light.
- the pixel includes: a first micro-display light-emitting device configured to emit light of a preset color, and a first micro-display light-emitting device is formed in the opening between the first micro-display light-emitting device and the transparent substrate.
- a second micro-display light-emitting device configured to emit light of a preset color
- a second light conversion material is formed in the opening between the second micro-display light-emitting device and the transparent substrate
- a third micro The display light emitting device is configured to emit light of a preset color
- the first light conversion material is configured to convert the preset color light into a first color light
- the second light conversion material is configured to convert the preset color light The light is converted to the second color light.
- the preset color light is blue light
- the first color light is red light
- the second color light is green light
- the first light conversion material includes red fluorescent glue; the second light conversion material includes green fluorescent glue.
- the microdisplay light emitting device includes: MiniLED and microLED.
- a quantum dot film layer is provided on the side of the transparent substrate facing away from the electrode layer.
- a reflective layer is provided between the transparent substrate and the quantum dot film layer, and the side of the reflective layer facing away from the transparent substrate is a reflective surface.
- the orthographic projection of the reflective layer of the reflective film on the transparent substrate and the orthographic projection of the micro-display light emitting device on the transparent substrate do not overlap.
- the driving module includes: a driving chip and a flexible circuit board, the flexible circuit board includes a plurality of conductive circuits, one end of the conductive circuit is connected to the driving chip, and the other of the conductive circuit One end is electrically connected to the signal transmission line.
- the present disclosure provides a display substrate, including: the backplane of the first aspect of the present disclosure.
- the present disclosure provides a display device including: the display substrate of the first aspect of the present disclosure.
- FIG. 1 is a schematic diagram of the structure of a micro light emitting diode display device in the related art
- Fig. 2a is a front view of the back plate of the embodiment of the disclosure.
- Figure 2b is a cross-sectional view of the back plate shown in Figure 2 along line AA in some embodiments;
- Fig. 3 is a schematic structural diagram of the back plate shown in Fig. 2b in the first stage of preparation;
- FIG. 4 is a schematic structural diagram of the backplane shown in FIG. 2b in the second stage of preparation
- Figure 5 is a front view of the back plate of some embodiments of the present disclosure.
- Figure 6 is a cross-sectional view of the back plate shown in Figure 5 along line BB;
- Figure 7 is a cross-sectional view of the back plate of Figure 2a along line AA in some embodiments;
- Fig. 8 is a cross-sectional view of the back plate of Fig. 2a along line AA in some embodiments.
- the reference signs are: 1', hard substrate; 1. transparent substrate; 1A, effective area; 1B, edge area; 2. first insulating layer; 3. electrode layer; 31, first sub-signal line; 32, first Two sub signal lines; 3a, connecting electrode; 4. second insulating layer; 5a, first micro-display light-emitting device; 5b, second micro-display light-emitting device; 5c, third micro-display light-emitting device; 51, cathode; 52, Anode; 6. Protective layer; 7. Flexible circuit board; 8. Rigid circuit board; 9. Driver chip; 10. Hole filling glue; 11a, first light conversion material; 11b, second light conversion material; 12. reflection Layer; 13, quantum dot film layer; H, via.
- the "patterning process” used in the present disclosure refers to the step of forming a structure with a specific pattern, which can be a photolithography process.
- the photolithography process includes forming a material layer, coating photoresist, exposing, developing, etching, and photolithography.
- One or more of the steps such as resist stripping; of course, the “patterning process” can also be other processes such as imprinting process and inkjet printing process.
- the electrical connection of the two structures mentioned in this disclosure means that the two structures can transmit current between them.
- the connection of two structures mentioned in this disclosure means that the two structures are in contact and can transmit current between them.
- the micro-light-emitting diode display device consists of a hard substrate 1'(material such as glass), an electrode layer 3 arranged on the hard substrate 1', and an electrode layer 3 bound to the hard substrate.
- a plurality of micro light emitting diodes (labeled as the first micro display light emitting device 5a, the second micro display light emitting device 5b, and the third micro display light emitting device 5c) on one side of 1', the protective glue 6 covering each micro light emitting diode, and the flexible circuit Board 7.
- the flexible circuit board 7 may also be provided with a structure such as a driving chip (not shown).
- the micro light emitting diode is arranged on the first side of the plane where the hard substrate 1'is located, and the flexible circuit board 7 is arranged on the second side of the plane where the hard substrate 1'is located, and the first side and the second side are opposite sides.
- the flexible circuit board 7 In order to realize the electrical connection between the flexible circuit board 7 and each micro light-emitting diode, it is necessary to wire on the side of the hard substrate 1'. The process of side wiring is difficult, and the required equipment is more complicated and expensive.
- the embodiment of the present disclosure provides a backplane, including: a transparent substrate 1; an electrode layer 3, arranged on one side of the transparent substrate 1, including a plurality of signal transmission lines; a plurality of micro-display light emitting devices, It is arranged on the side of the electrode layer 3 facing away from the transparent substrate 1.
- the micro-display light-emitting device is electrically connected to the signal transmission line, and the micro-display light-emitting device can emit light toward the side of the transparent substrate 1;
- the protective layer 6 is arranged on the back of the micro-display light-emitting device to be transparent One side of the substrate 1; the drive module is arranged on the side of the protective layer 6 facing away from the transparent substrate 1, and is electrically connected to the signal transmission line.
- the transparent substrate 1 is, for example, a glass substrate.
- the micro-display light-emitting device refers to a small-sized light-emitting device, such as a Micro-LED (the overall size is usually below 100 um) or a Mini-LED (the overall size is usually between 100 um and 200 um).
- the protective layer 6 performs electrical and mechanical protection for the microdisplay light emitting device.
- the material of the protective layer 6 is, for example, silica gel, epoxy glue, etc., which can be formed by a dispensing process or an injection molding process.
- the driving module is composed of, for example, a driving chip 9, a hard circuit board 8, and a flexible circuit board 7.
- the driving chip 9 is bound on the hard circuit board 8 to transmit driving signals to the hard circuit board 8; the flexible circuit board 7 It is also bound to the hard circuit board 8 to transmit the drive signal from the hard circuit board 8 to the flexible circuit board 7; and the electrical connection between the flexible circuit board 7 and the electrode layer 3, so as to transmit the drive signal from the flexible circuit board 7 To the electrode layer 3; finally the electrode layer 3 drives the micro-display light-emitting device to emit light.
- the driving module may also include: a driving chip 9 and a flexible circuit board 7.
- the flexible circuit board 7 includes a number of conductive circuits (not shown), one end of the conductive circuit is connected to the driving chip 9, and the conductive circuit The other end of is electrically connected to the signal transmission line (that is, electrically connected to the electrode layer 3).
- the driving chip 9 is directly bound on the flexible circuit board 7, instead of realizing the electrical connection between the driving chip 9 and the flexible circuit board 7 via the hard circuit board 8. That is, the above-mentioned hard circuit board 8 is an optional component in the drive module.
- the micro-display light-emitting device and the driving module are arranged on the same side of the plane where the transparent substrate 1 is located, and the structure for forming an electrical connection between the micro-display light-emitting device and the driving module is also corresponding.
- the ground is set on the same side of the plane where the transparent substrate 1 is located, so there is no need for wiring on the side of the transparent substrate 1, so that the manufacturing process of the backplane is simple and the cost is reduced.
- a first insulating layer 2 may also be provided between the transparent substrate 1 and the electrode layer 3, such as a polyimide (PI) layer or a transparent thermoplastic polyimide (TPI) layer.
- PI polyimide
- TPI transparent thermoplastic polyimide
- the electrode layer 3 can be provided with a single-layer signal transmission line or multiple layers, as shown in Figure 2b, where two layers of signal transmission lines are provided in the electrode layer 3, and the two layers of signal transmission lines are separated by a second insulating layer 4.
- the material of 4 is, for example, a polyimide (PI) layer or a transparent thermoplastic polyimide (TPI) layer.
- the electrode layer 3 in the direction perpendicular to the transparent substrate 1, the electrode layer 3 is formed with an opening in the area facing the microdisplay light emitting device. Since the micro-display light emitting device emits light toward the transparent substrate 1, the opening formed in the electrode layer 3 is beneficial to increase the transmittance of the backplane.
- the first layer of signal transmission line patterns can be formed on the first insulating layer 2 through a patterning process, and the first layer of signal transmission line material in the region corresponding to the opening to be formed is removed.
- the pattern of the second insulating layer 4 is then formed on the signal transmission line of the first layer by a patterning process, while the material of the second insulating layer 4 in the region corresponding to the opening to be formed is retained (removed in the subsequent process), and the first to be removed There is a gap between the material of the second insulating layer 4 and the second insulating layer 4 in the final product.
- the conductive material used to form the second layer of signal transmission line the conductive material will fill the above gap, and use the process of exposure, development, and etching to form the pattern of the second layer of signal line. At this time, the area in the area where the opening is to be formed The conductive material is removed.
- the backplane is divided into an effective area 1A and an edge area 1B surrounding the effective area 1A; the part of the protective layer 6 located in the edge area 1B is formed with a via H connected to the signal transmission line, A connecting electrode 3a is arranged in the via hole H, and the connecting electrode 3a extends to the side of the protective layer 6 facing away from the transparent substrate 1, and the driving module is connected to the signal transmission line through the connecting electrode 3a.
- a number of micro-display light-emitting devices are arranged in the active area 1A (Active Area, also called AA area), for example, distributed in an array; the connecting electrode 3a serves as an interface for the electrode layer 3 to communicate with the outside; the flexible circuit board 7 in the driving module The connection with the connection electrode 3a is realized on the surface of the protective layer 6 facing away from the transparent substrate 1.
- Active Area also called AA area
- a conductive layer is formed on the transparent substrate 1 (specifically on the first insulating layer 2).
- sputtering, photolithography, or electroplating can be used to form the signal transmission line in the electrode layer 3, wherein, at the edge A connecting electrode 3a is formed in the region 1B; then the microdisplay light-emitting device is bound on the conductive layer; and then a protective layer 6 is formed, wherein the protective layer 6 covers the connecting electrode 3a.
- the micro-display light-emitting device can be bound on the conductive layer by means such as welding and eutectic.
- a via hole H is formed in the protective layer 6 to expose the connection electrode 3a; then the connection electrode 3a at the bottom of the via hole H is extended to the outside of the via hole H by a patterning process.
- the flexible circuit board 7 and the connecting electrode 3a are bound together.
- a hole-filling glue 10 is provided in the via hole H and on the side of the connection electrode 3a facing away from the transparent substrate 1.
- the material of the filling glue 10 is, for example, silica gel, epoxy resin, ultraviolet curing glue, acrylic, etc., so as to protect the circuit in the via hole H.
- the backplane is divided into an effective area 1A and an edge area 1B surrounding the effective area 1A; the part of the protective layer 6 located in the edge area 1B covers an edge area 1B close to the effective area 1A.
- the signal transmission line is located in the edge area 1B and is not covered by the protective layer 6 and is connected to the driving module.
- the outer part of the edge region 1B of the backplane exposes a whole area of the electrode layer 3 so as to facilitate the position where the electrode layer 3 is exposed. Connect (or bind) the flexible circuit board 7 at the locations.
- the protective layer 6 is located at the edge area 1B, and the side of the protective layer 6 facing away from the effective area of the display area is a sloped surface.
- the material of the entire protective layer 6 can be formed on the transparent substrate 1 first, and then a patterning process such as photolithography can be used to remove the material of the entire protective layer 6 located in the edge region 1B near its peripheral boundary, and by controlling the etching The parameters of the process realize that the protective layer 6 forms a relatively gentle slope in the middle of the edge region 1B.
- the flexible circuit board 7 when the flexible circuit board 7 is bound, the flexible circuit board 7 will not be bent to a large extent, which is convenient to improve the yield of the product and reduce the difficulty in binding.
- the signal transmission line includes a first sub-signal line 31 and a second sub-signal line 32, and the first sub-signal line 31 is connected to one of the cathode 51 and the anode 52, The second sub signal line 32 is connected to the other of the cathode 51 and the anode 52.
- the micro-display light-emitting device can be bound to the signal transmission line.
- the electrode layer 3 further includes a binding electrode (not shown) connected to the signal transmission line, the binding electrode includes a first sub-electrode and a second sub-electrode, and the micro-display light-emitting device includes a cathode 51 and an anode 52, The first sub-electrode is connected to one of the cathode 51 and the anode 52, and the second sub-electrode is connected to the other of the cathode 51 and the anode 52.
- the micro-display light-emitting device can also be bound on the binding electrode, and the binding electrode is formed of a section of conductive material connected to the signal transmission line.
- all the micro-display light-emitting devices constitute a plurality of pixels, and each pixel includes at least three micro-display light-emitting devices.
- the backplane can be used as a part of the display substrate.
- the pixel includes: a first micro-display light-emitting device 5a configured to emit red light; a second micro-display light-emitting device 5b configured to emit green light; and a third micro-display light-emitting device 5c, configured to emit blue light.
- each micro-display light-emitting device corresponds to a sub-pixel of one color.
- the pixel includes: a first micro-display light-emitting device 5a configured to emit light of a preset color, and a first light is formed in the opening between the first micro-display light-emitting device 5a and the transparent substrate 1.
- the second micro-display light-emitting device 5b configured to emit light of a preset color
- a second light conversion material 11b is formed in the opening between the second micro-display light-emitting device 5b and the transparent substrate 1
- the third micro-display light-emitting The device 5c is configured to emit light of a preset color
- the first light conversion material 11a is configured to convert the preset color light into a first color light
- the second light conversion material 11b is configured to convert a preset color light into a second color light .
- the micro-display light-emitting devices all adopt micro-display light-emitting devices that emit the same color, that is, the electrical characteristics of the micro-display light-emitting devices in the sub-pixels of different colors are the same, so that the design of the driving module of the micro-display light-emitting device can be improved. It's simpler.
- Both the first light conversion material 11a and the second light conversion material 11b can be selected as down-conversion material luminescent materials.
- Down-conversion materials Luminescent materials refer to materials that can emit two or more low-energy photons after absorbing the ultraviolet light of one high-energy photon. The luminous efficiency of the down-conversion material luminescent material is higher.
- the preset color light is blue light
- the first color light is red light
- the second color light is green light
- the first light conversion material 11a converts blue light into red light
- the second light conversion material 11b converts blue light into green light
- the first light conversion material 11a includes red fluorescent glue; the second light conversion material 11b includes green fluorescent glue.
- Fluorescent glue is a glue material containing fluorescent powder.
- red fluorescent glue can convert blue light into red light
- green fluorescent glue can convert blue light into green light.
- the opening sizes of the first light conversion material 11a and the second light conversion material 11b are relatively small, and the fluorescent glue can fill only these openings well.
- a quantum dot film 13 layer is provided on the side of the transparent substrate 1 facing away from the electrode layer 3.
- Quantum dots are distributed in the quantum dot film 13.
- the quantum dots are, for example, a semiconductor material with a crystalline structure with three dimensions on the order of nanometers, which is composed of zinc, cadmium, selenium, and sulfur atoms.
- the energy level changes according to the size of the quantum dot, so the band gap can be controlled by changing the size of the quantum dot, thereby controlling the emission spectrum of the quantum dot. That is, quantum dots can convert light of one color into light of another color.
- the quantum dot film 13 has crystal structures of different sizes distributed, and can emit light of composite colors, for example, can convert blue light into white light.
- the quantum dot film 13 can be made into a larger-sized film layer, so it can be used to convert a large area of light.
- the backplane is used as a surface light source.
- it can be used as a backlight in a liquid crystal display.
- the backlight source mostly adopts the structure of setting Mini-LED on the rigid circuit board.
- the above-mentioned lamp board used as the backlight source can be made thinner in line width and the partition can be made more. Many, the control of the backlight can be made more precise.
- a reflective layer 12 is provided between the transparent substrate 1 and the quantum dot film 13 layer, and the side of the reflective layer 12 facing away from the transparent substrate 1 is a reflective surface.
- the reflective layer 12 allows the light emitted by the quantum dot film 13 in different directions to be emitted in a direction away from the transparent substrate 1, thereby improving the utilization rate of light.
- the orthographic projection of the reflective layer 12 on the transparent substrate 1 and the orthographic projection of the micro-display light emitting device on the transparent substrate 1 do not overlap.
- the path of the light emitted by the micro display device to the quantum dot film 13 is not degraded by the reflective layer. It is also to further improve the utilization rate of light.
- the embodiments of the present disclosure also provide a display substrate, including the backplane provided in the foregoing embodiments.
- An embodiment of the present disclosure also provides a display device, including the display substrate provided in the foregoing embodiment.
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Abstract
Description
Claims (20)
- 一种背板,其中,包括:透明基底;电极层,设置在所述透明基底的一侧,包括多条信号传输线;多个微显示发光器件,设置在所述电极层背向所述透明基底的一侧,所述微显示发光器件与所述信号传输线电连接,所述微显示发光器件能够朝向所述透明基底一侧发光;保护层,设置在所述微显示发光器件背向所述透明基底的一侧;驱动模块,设置在所述保护层背向所述透明基底的一侧,与所述信号传输线电连接。
- 根据权利要求1所述的背板,其中,在垂直于所述透明基底的方向上,所述电极层正对所述微显示发光器件的区域形成有开口。
- 根据权利要求1所述的背板,其中,所述背板划分为有效区域和围绕所述有效区域的边缘区域;所述保护层位于所述边缘区域的部分形成有连通至所述信号传输线的过孔,所述过孔内设置有连接电极,且所述连接电极延伸至所述保护层背向所述透明基底的一侧,所述驱动模块通过所述连接电极与所述信号传输线连接。
- 根据权利要求3所述的背板,其中,在所述过孔内且位于所述连 接电极背向所述透明基底的一侧设置有填孔胶。
- 根据权利要求1所述的背板,其中,所述背板划分为有效区域和围绕所述有效区域的边缘区域;所述保护层位于所述边缘区域的部分覆盖于所述边缘区域靠近所述有效区域的一侧,所述信号传输线位于所述边缘区域且未被所述保护层覆盖部分与所述驱动模块连接。
- 根据权利要求5所述的背板,其中,所述保护层位于所述边缘区域的部分,其背向所述显示区域有效区域的侧面为斜坡面。
- 根据权利要求1所述的背板,其中,所述电极层还包括与所述信号传输线相连的绑定电极,所述绑定电极包括第一子电极和第二子电极,所述微显示发光器件包括阴极和阳极,所述第一子电极与所述阴极和阳极中的一个连接,所述第二子电极与所述阴极和阳极中的另一个连接。
- 根据权利要求7所述的背板,其中,所述信号传输线包括第一子信号线和第二子信号线,所述第一子信号线与所述阴极和阳极中的一个连接,所述第二子信号线与所述阴极和阳极中的另一个连接。
- 根据权利要求2所述的背板,其中,全部所述微显示发光器件构成多个像素,每个像素包括至少三个微显示发光器件。
- 根据权利要求9所述的背板,其中,所述像素包括:第一微显示发光器件,配置为发出红光;第二微显示发光器件,配置为发出绿光;第三微显示发光器件,配置为发出蓝光。
- 根据权利要求9所述的背板,其中,所述像素包括:第一微显示发光器件,配置为发出预设颜色光,所述第一微显示发光器件与所述透明基底之间的所述开口内形成有第一光转换材料;第二微显示发光器件,配置为发出预设颜色光,所述第二微显示发光器件与所述透明基底之间的所述开口内形成有第二光转换材料;第三微显示发光器件,配置为发出预设颜色光;所述第一光转换材料配置为将所述预设颜色光转换为第一颜色光,所述第二光转换材料配置为将所述预设颜色光转换为第二颜色光。
- 根据权利要求11所述的背板,其中,所述预设颜色光为蓝光,所述第一颜色光为红光,所述第二颜色光为绿光。
- 根据权利要求12所述的背板,其中,所述第一光转换材料包括红光荧光胶;所述第二光转换材料包括绿光荧光胶。
- 根据权利要求1-13任一所述的背板,其中,所述微显示发光器 件包括:Mini-LED和Micro-LED。
- 据权利要求14述的背板,其中,所述透明基底背向所述电极层的一侧设置有量子点膜层。
- 据权利要求15述的背板,其中,所述透明基底与所述量子点膜层之间设置有反射层,所述反射层背向所述透明基底的一侧为反光面。
- 根据权利要求16所述的背板,其中,所述反射层在所述透明基底上的正投影与所述微显示发光器件在所述透明基底上的正投影不交叠。
- 根据权利要求1-17任一所述的背板,其中,所述驱动模块包括:驱动芯片和与柔性电路板,所述柔性电路板包括若干条导电线路,所述导电线路的一端与所述驱动芯片连接,所述导电线路的另一端与所述信号传输线电连接。
- 一种显示基板,其中,包括:根据权利要求1-18任一所述的背板。
- 一种显示装置,其中,包括:根据权利要求19所述的显示基板。
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PCT/CN2019/117510 WO2021092757A1 (zh) | 2019-11-12 | 2019-11-12 | 背板、显示基板和显示装置 |
CN201980002397.9A CN113424249B (zh) | 2019-11-12 | 2019-11-12 | 背板、显示基板和显示装置 |
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