WO2020224063A1 - Display panel, manufacturing method therefor, and display device - Google Patents

Abstract

A display panel, a manufacturing method therefor and a display device. The display panel and the display device comprise: a substrate (201), and an anode layer (202), a light-shielding layer (203) and a thin-film transistor layer (204), which are successively arranged on the substrate (201), wherein the anode layer (202) and the light-shielding layer (203) are made of a photomask; and the thin-film transistor layer (204) comprises an active layer (2041), a gate insulating layer (2042), a gate layer (2043), and a source and drain layer (2045), and the gate layer (2043) and the gate insulating layer (2042) are made of a photomask.

Description

Display panel, manufacturing method thereof, and display device Technical field

The present invention relates to the field of display technology, in particular to the manufacture of display devices, and in particular to a display panel, a manufacturing method thereof, and a display device.

Background technique

Currently, OLED (Organic Compared with LCD (Liquid Crystal Display), Light-Emitting Diode (Organic Light-Emitting Diode) display technology has the advantages of self-luminescence, wide viewing angle, almost infinitely high contrast, lower power consumption, and extremely high response speed.

However, the OLED manufacturing process is complicated and the film layers are many. As shown in FIG. 1, a common OLED panel 100 needs to form a light shielding layer 102, a buffer layer 103, an active layer 104, a gate insulating layer 105, and a gate layer on the substrate 101. 106, inter-insulating layer 107, source and drain layer 108, passivation layer 109, planarization layer 1010, anode layer 1011, pixel definition layer 1012, light-emitting layer 1013, and cathode layer 1014, each of which needs to undergo a yellow light The manufacturing process requires a photomask. Therefore, the patterning of these films requires multiple photomasks and multiple yellowing processes, which results in higher manufacturing costs and lower manufacturing efficiency.

Therefore, it is necessary to provide a display panel, a manufacturing method thereof, and a display device that can reduce OLED manufacturing costs and improve manufacturing efficiency.

technical problem

The purpose of the present invention is to provide a display panel, a manufacturing method thereof, and a display device. By optimizing the film structure of the display panel, the manufacturing cost caused by the need for multiple photomasks and multiple yellow light manufacturing processes in the prior art is solved. Higher and lower production efficiency.

Technical solutions

To solve the above problems, the technical solution provided by the present invention is as follows:

An embodiment of the present invention provides a display panel, which includes:

Substrate

An anode layer, the anode layer is provided on the substrate;

A light-shielding layer, the light-shielding layer is provided on the anode layer;

The thin film transistor layer is provided on the light shielding layer.

In an embodiment, the thin film transistor layer includes:

Active layer

A gate insulating layer, the gate insulating layer being disposed on the active layer;

A gate layer, the gate layer is provided on the gate insulating layer;

An inter-insulating layer, the inter-insulating layer is provided on the gate layer and the active layer;

A source-drain layer, the source-drain layer is disposed on the inter-insulating layer, the source-drain layer is electrically connected to the active layer, and the source-drain layer is electrically connected to the light shielding layer , So that the active layer and the anode layer are electrically connected.

In an embodiment, the display panel further includes a first through hole, the first through hole is provided on the inter-insulating layer, and the first through hole is used to electrically connect the active layer and the The source and drain layer.

In an embodiment, the display panel further includes:

A buffer layer, the buffer layer is provided between the light shielding layer and the thin film transistor layer, and the inter-insulating layer is also provided on the buffer layer;

A second through hole, the second through hole is provided on the inter-insulating layer and the buffer layer, and the second through hole is used to electrically connect the source drain layer and the light shielding layer.

In one embodiment, the gate insulating layer and the gate layer have the same width.

In an embodiment, the display panel further includes a pixel definition layer, and the pixel definition layer is disposed on the inter-insulating layer and the source-drain layer.

In an embodiment, the display panel further includes a light-emitting layer, and the light-emitting layer is disposed in an opening area of the pixel definition layer.

In one embodiment, the constituent material of the light shielding layer is an opaque conductive material.

An embodiment of the present invention also provides a display device, the display device includes any display panel as described above, and the display panel includes:

Substrate

An anode layer, the anode layer is provided on the substrate;

A light-shielding layer, the light-shielding layer is provided on the anode layer;

The thin film transistor layer is provided on the light shielding layer.

In an embodiment, the thin film transistor layer includes:

Active layer

A gate insulating layer, the gate insulating layer being disposed on the active layer;

A gate layer, the gate layer is provided on the gate insulating layer;

An inter-insulating layer, the inter-insulating layer is provided on the gate layer and the active layer;

A source-drain layer, the source-drain layer is disposed on the inter-insulating layer, the source-drain layer is electrically connected to the active layer, and the source-drain layer is electrically connected to the light shielding layer , So that the active layer and the anode layer are electrically connected.

In an embodiment, the display panel further includes a first through hole, the first through hole is provided on the inter-insulating layer, and the first through hole is used to electrically connect the active layer and the The source and drain layer.

In an embodiment, the display panel further includes:

A buffer layer, the buffer layer is provided between the light shielding layer and the thin film transistor layer, and the inter-insulating layer is also provided on the buffer layer;

A second through hole, the second through hole is provided on the inter-insulating layer and the buffer layer, and the second through hole is used to electrically connect the source drain layer and the light shielding layer.

In one embodiment, the gate insulating layer and the gate layer have the same width.

In an embodiment, the display panel further includes a pixel definition layer, and the pixel definition layer is disposed on the inter-insulating layer and the source-drain layer.

In an embodiment, the display panel further includes a light-emitting layer, and the light-emitting layer is disposed in an opening area of the pixel definition layer.

In one embodiment, the constituent material of the light shielding layer is an opaque conductive material.

The embodiment of the present invention also provides a manufacturing method of a display panel, which includes:

Provide a substrate;

Forming an anode film on the substrate;

Forming a light shielding film on the anode film;

Forming a photoresist layer on the light shielding film;

Using the photoresist layer as a protective layer to etch the light shielding film and the anode film to form an anode layer and a light shielding layer;

Peeling off the photoresist layer;

A thin film transistor layer is formed on the light shielding layer.

In an embodiment, forming a thin film transistor layer on the light shielding layer includes:

Forming an active layer on the light shielding layer;

Forming a gate insulating film on the active layer;

Forming a gate film on the gate insulating film;

Forming a photoresist layer on the gate film;

Using the photoresist layer as a protective layer to etch the gate film to form a gate layer;

Using the photoresist layer and the gate layer as protective layers to etch the gate insulating film to form a gate insulating layer;

Peeling off the photoresist layer;

Forming an inter-insulating layer on the gate layer;

A source and drain layer is formed on the insulating layer to obtain the thin film transistor layer.

Beneficial effect

The present invention provides a display panel and a manufacturing method thereof and a display device. Compared with the prior art, the anode layer and the light shielding layer are made by only one photomask, and the gate layer and the gate insulating layer are made by only one The photomask is made, and the process of passivation layer and flat layer is also avoided through design improvement. The solution reduces the manufacturing cost of the display panel by optimizing the film structure of the display panel, and improves the manufacturing efficiency and yield of the display panel.

Description of the drawings

The present invention will be further described with the accompanying drawings. It should be noted that the drawings in the following description are only used to explain some embodiments of the present invention. For those skilled in the art, without creative work, other drawings can be obtained based on these drawings. Attached.

FIG. 1 is a schematic cross-sectional view of a display panel in the prior art.

FIG. 2 is a schematic cross-sectional view of a display panel provided by an embodiment of the present invention.

FIG. 3 is another schematic cross-sectional view of a display panel provided by an embodiment of the present invention.

FIG. 4 is a flowchart of a manufacturing method of a display panel provided by an embodiment of the present invention.

FIG. 5 is a flowchart of another manufacturing method of a display panel provided by an embodiment of the present invention.

FIG. 6 is a schematic diagram of a scene of a manufacturing method of a display panel provided by an embodiment of the present invention.

FIG. 7 is a schematic diagram of another scene of a manufacturing method of a display panel provided by an embodiment of the present invention.

FIG. 8 is a schematic diagram of another scene of the manufacturing method of the display panel provided by the embodiment of the present invention.

Embodiments of the invention

The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work shall fall within the protection scope of the present invention.

In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "surface", etc. are based on the orientation or positional relationship shown in the drawings, where "upper" is only the surface Above an object, specifically refers to directly above, obliquely above, or upper surface, as long as it is above the level of the object, while "surface" refers to two objects in direct contact with each other. The upper position or positional relationship is only for It is convenient to describe the present invention and simplify the description, instead of indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention.

It should be noted that the term "thickness" is a neutral word, and does not mean that it is biased towards thick or thin. It just means that there is a preset value, and the value is uncertain and will be determined according to the actual situation.

In addition, it should be noted that the drawings provide only the structures and steps closely related to the present invention, and omit some details that have little to do with the invention. The purpose is to simplify the drawings so that the invention is clear at a glance, rather than showing The actual device and method are exactly the same as the drawings, and are not limited to the actual device and method.

The present invention provides a display device, which includes a display panel as shown in FIGS. 2 and 3.

As shown in FIG. 2, the display panel 200 includes a substrate 201, an anode layer 202 disposed on the substrate 201, a light shielding layer 203 disposed on the anode layer 202, and a thin film transistor layer disposed on the light shielding layer 203. 204.

Wherein, the thin film transistor layer 204 includes an active layer 2041, a gate insulating layer 2042 disposed on the active layer 2041, a gate layer 2043 disposed on the gate insulating layer 2042, and a gate insulating layer 2043 disposed on the gate insulating layer 2042. The gate layer 2043 and the inter-insulating layer 2044 on the active layer 2041 and the source-drain layer 2045 provided on the inter-insulating layer 2044.

In an embodiment, the gate insulating layer 2042 and the gate layer 2043 can be prepared to have the same width, so that the gate insulating layer 2042 and the gate layer 2043 can be made through the same photomask. The production efficiency of the display panel can be improved.

In an embodiment, the constituent material of the gate insulating layer 2042 may be a substance not limited to silicon oxide, and the constituent material of the gate layer 2043 may be a conductive material not limited to Cu, Al, Mo, and Ti.

As shown in FIG. 2, the source-drain layer 2045 includes a source electrode and a drain electrode. During the operation of the display panel 200, the functions of the source electrode and the drain electrode are in an alternating state. And the drain are collectively referred to as the source and drain layer 2045, the source and drain layer 2045 is electrically connected to the active layer 2041, and the source and drain layer 2045 is electrically connected to the light shielding layer 203, so that the The active layer 2041 is electrically connected to the anode layer 202.

It should be understood that the active layer 2041 is a semiconductor layer, for example, it can be a substance that is not limited to amorphous silicon or oxide semiconductor. The active layer 2041 is in a semiconductor state in the channel region. Conduction treatment is required in the source and drain regions. After the conductorization treatment, the active layer 2041 and the source and drain overlap The region is in a conductive state with good conductivity, and electrical signals can be conducted only after the source-drain layer 2045 is overlapped with the region with good conductivity.

In particular, the constituent material of the light shielding layer 203 is an opaque conductive material, such as any opaque metal such as Cu and Mo or other non-metallic opaque materials; the source and drain layer 2045 is a conductive film layer, such as: The material may not be limited to Cu, Al, Mo, Ti. In this way, since the area where the active layer 2041 and the source and drain overlap, the source and drain layer 2045, and the light shielding layer 203 all have conductivity, the source and drain layer 2045 In this way, the active layer 2041 and the anode layer 202 can be electrically connected.

In an embodiment, the display panel 200 further includes a first through hole 205, and the first through hole 205

Is provided on the inter-insulating layer 2044, the first through hole 205 is used to electrically connect the active layer 2041 and the source/drain layer 2045; the display panel 200 further includes a buffer layer 207, a second Through hole 206, the buffer layer 207 is provided between the light shielding layer 203 and the thin film transistor layer 204, the inter-insulating layer 2044 is also provided on the buffer layer 207, and the second through hole 206 is provided On the inter-insulating layer 2044 and the buffer layer 207, the second through hole 206 is used to electrically connect the source drain layer 2045 and the light shielding layer 203.

In an embodiment, the display panel 200 further includes a pixel definition layer 208, and the pixel definition layer 208 is disposed on the inter-insulating layer 2044 and the source-drain layer 2045. As shown in FIG. 2, the pixel defining layer 208 includes two pixel defining portions, and the two pixel defining portions and the anode layer 202 constitute an opening area 2011. Wherein, the constituent material of the pixel defining layer 208 may be a positive or negative photosensitive resin material with hydrophobicity.

In an embodiment, the display panel 200 further includes a light-emitting layer 209 disposed in the opening area 2011 of the pixel definition layer 208. It can be understood that the pixel definition layer 208 of the entire display panel 200 includes a plurality of pixel definition portions, and the pixel definition layer 208 is used to define the distribution of the light-emitting layer 209. Therefore, specifically The light-emitting layer 209 in the display panel 200 also includes a plurality of light-emitting portions, and the multiple light-emitting portions are respectively disposed in the opening area 2011. Wherein, the light-emitting layer 209 can be produced by an inkjet printing process.

In an embodiment, the display panel 200 further includes a cathode layer 2010, and the cathode layer 2010 is disposed on the light-emitting layer 209. It can be understood that, since the cathode layer 2010 is generally a whole film layer, the cathode layer 2010 may be provided on the pixel defining layer 208 in addition to being provided on the light emitting layer 209.

When the display panel 200 is of the bottom emission type, the anode layer 202 can be made into a transparent anode. For example, the constituent material of the anode layer 202 can be any form of transparent not limited to indium tin oxide and indium zinc oxide. Conductive material. At the same time, the cathode layer 2010 can be made into a cathode with high reflectivity. For example, the constituent material of the cathode layer 2010 can be a metal material not limited to Al and Ag.

When the display panel 200 is a top emission type, it can be understood that

The anode layer 202 needs to have good electrical conductivity, high reflectivity, and the work function of the anode layer 202 material must be similar to the work function of the hole injection layer of the display panel 200 to ensure that the two There will not be too much potential barrier to affect device efficiency. Therefore, similar to the above, the anode layer 202 can be made into a transparent anode. For example, the constituent material of the anode layer 202 can be any form of transparent conductive material that is not limited to indium tin oxide and indium zinc oxide. It should be noted that, as shown in FIG. 3, the display panel 200 further includes a reflective layer 2012, the reflective layer 2012 is disposed between the substrate 201 and the light shielding layer 202, and the reflective layer 2012 may have reflectivity. For a high film layer, for example, the constituent material of the reflective layer 2012 may be a metal material not limited to Al, Ag, and Cu. Correspondingly, the cathode layer 2010 can be made into a transparent cathode to achieve a light transmission effect.

Above, the present invention provides a display panel and a display device. The display panel and the display device include: a substrate, an anode layer, a light shielding layer, and a thin film transistor layer sequentially arranged on the substrate; wherein the anode layer and the light shielding layer are made of a photomask ; The thin film transistor layer includes an active layer, a gate insulating layer, a gate layer and a source drain layer; wherein the gate layer and the gate insulating layer are made by a photomask. The solution reduces the manufacturing cost of the display panel by optimizing the film structure of the display panel, and improves the manufacturing efficiency and yield of the display panel.

The present invention also provides a method for manufacturing a display panel. Referring to FIGS. 4 and 6, the method includes the following steps:

S101: Provide a substrate 301.

Wherein, the substrate 301 may be a glass substrate, and the composition material of the glass substrate includes: quartz powder, strontium carbonate, barium carbonate, boric acid, boric anhydride, alumina, calcium carbonate, barium nitrate, magnesium oxide, tin oxide, oxide At least one of zinc.

S102: forming an anode film 3021 on the substrate 301.

Wherein, when the display panel is of the bottom emission type, the anode film 3021 may be a transparent anode material. For example, the anode film 3021 may be made of any form not limited to indium tin oxide and indium zinc oxide. Transparent conductive material; when the display panel is of the top emission type, the anode film 3021 may be a transparent anode material, for example: the anode film may be made of any form not limited to indium tin oxide and indium zinc oxide At the same time, before forming the anode film 3021, a reflective layer should also be formed on the surface of the substrate. The reflective layer may be a film with high reflectivity. For example, the constituent material of the reflective layer may be It is not limited to metal materials of Al, Ag, and Cu.

S103: forming a light shielding film 3031 on the anode film 3021.

Wherein, the constituent material of the light-shielding film 3031 is an opaque conductive material, such as any opaque metal such as Cu, Mo, or other non-metal opaque materials.

S104: forming a photoresist layer 304 on the light shielding film 3031.

Specifically, as shown in FIG. 6, the upper surface of the light shielding film 3031

Coat a layer of photoresist film 3041; then use a gradient mask to expose the photoresist film 3041. The gradient mask includes a fully transparent area A1, a partially transparent area A2, and an opaque area A3, corresponding to , The degree of reaction of the photoresist in the A1, A2, and A3 areas is successively reduced; then, the photoresist film 3041 is developed, and the photoresist that has reacted is washed away with a developer, that is, the entire photoresist is washed away. All the photoresist corresponding to the light-transmitting area A1 and the part of the photoresist corresponding to the partially light-transmitting area A2 are obtained to obtain the photoresist film 3042; then, the anode film 3021 corresponding to the area not covered by the photoresist film 3042 is etched away And the light-shielding film 3031 to obtain the anode film 3022 and the light-shielding film 3032; finally, dry etching is used to reduce the thickness of the photoresist film 3042 as a whole until the thickness of the photoresist film 3042 corresponding to the A2 area is reduced to zero. Photoresist layer 304.

S105: Using the photoresist layer 304 as a protective layer, etching the light shielding film 3032 and the anode film 3022 to form an anode layer 302 and a light shielding layer 303.

It is understandable that since the light-shielding film 3032 is located on the upper surface of the anode film 3022, etching refers to the use of the photoresist layer 304 to etch the light-shielding film 3032 to obtain the light-shielding layer 303. The underlying unetched anode film 3022 becomes the anode layer 302.

S106: Peel off the photoresist layer 304.

S107: forming a thin film transistor layer on the light shielding layer 303.

In one embodiment, referring to FIGS. 5 and 7, the light shielding layer is formed

The thin film transistor layer includes the following steps:

S1071: An active layer 306 is formed on the light shielding layer 303.

Wherein, the active layer 306 is a semiconductor layer, for example, it may be a substance that is not limited to amorphous silicon or oxide semiconductor.

S1072: forming a gate insulating film 3071 on the active layer 306.

Wherein, the constituent material of the gate insulating film 3071 may be a substance not limited to silicon oxide.

S1073: forming a gate film 3081 on the gate insulating film 3071.

Wherein, the constituent material of the gate film 3081 may be a conductive material not limited to Cu, Al, Mo, and Ti.

S1074: forming a photoresist layer 309 on the gate film 3081.

Specifically, as shown in FIG. 7, a photoresist film 3091 is first coated on the upper surface of the gate film 3081; then a photomask is used to expose the photoresist film 3091, and the photomask includes light-transmitting Then, the photoresist film 3091 is developed, and the photoresist that has reacted is washed away with a developing solution, that is, all the photoresist corresponding to the light-transmitting area is washed away to obtain the photoresist layer 309 .

S1075: Use the photoresist layer 309 as a protective layer to etch the gate film 3081 to form a gate layer 308.

It can be understood that the etching refers to etching the gate film 3081 using the photoresist layer 309 to obtain the gate layer 308.

S1076: Use the photoresist layer 309 and the gate layer 308 as protective layers,

The gate insulating film 3071 is etched to form a gate insulating layer 307.

It is understandable that the patterns of the gate insulating layer 307 and the gate layer 308 can be basically the same, so the photoresist layer 309 and the gate layer 308 can be used as protective layers to protect the gate insulating film. 3071 is etched to form a gate insulating layer 307.

S1077: Peel off the photoresist layer 309.

S1078: forming an inter-insulating layer 3010 on the gate layer 308.

Specifically, as shown in FIG. 8, an interlayer insulating film 30101 and a photoresist film 30111 are sequentially coated on the upper surface of the gate layer 308; then a gradient mask is used to expose the photoresist film 30111. The gradient mask includes a fully transparent area B1, a partially transparent area B2, and an opaque area B3. Correspondingly, the degree of reaction of the photoresist in the B1, B2, and B3 areas is sequentially reduced; The photoresist film 30111 is developed, and the photoresist that has reacted is washed away with the developer, that is, all the photoresist corresponding to the fully transparent area B1 and the part of the photoresist corresponding to the partially transparent area B2 are washed to obtain light Then, the inter-insulating film 30101 corresponding to the area not covered by the photo-resist film 30112 is etched away to obtain the inter-insulating film 30102; further, the thickness of the photo-resist film 30112 is reduced as a whole by dry etching Until the thickness of the photoresist film 30112 corresponding to the B2 area is reduced to zero, and the photoresist layer 3011 is obtained; continuing, using the photoresist layer 3011 as a protective layer, the inter-insulating film 30102 is etched to form Inter-insulating layer 3010; Finally, the photoresist layer 3011 is stripped.

Wherein, before forming the thin film transistor layer, a buffer layer 3012 may be formed on the upper surface of the light shielding layer 303, and the buffer layer 3012 is disposed between the light shielding layer 303 and the active layer 306. It can be understood that the inter-insulating layer 3010 includes a first area that is in direct contact with the buffer layer 3012. As shown in FIG. 8, the inter-insulating layer 3010 includes a plurality of shallow holes 3013. The shallow holes 3013 in the first area continue to be etched and become deep holes 3014.

S1079: forming a source and drain layer 3015 on the inter-insulating layer 3010 to obtain the thin film transistor layer.

Wherein, the source and drain layer 3015 can be formed by a complete yellow light process. It can be understood that the source and drain layer 3015 is a conductive film layer, for example, the material may not be limited to Cu, Al, Mo, Ti.

In particular, the source and drain layer 3015 can be electrically connected to the active layer 306 through the shallow hole 3013 and electrically connected to the light shielding layer 303 through the shallow hole 3013 and the deep hole 3014, so that The active layer 306 is electrically connected to the anode layer 302.

In an embodiment, the display panel may further include a pixel definition layer. Compared with FIG. 1, in the present invention, after the thin film transistor layer is formed, the insulating layer and the source/drain layer The pixel definition layer is directly formed on the upper surface, which reduces the preparation of the passivation layer and the flat layer, can reduce the production cost of the display panel, and improve the production efficiency. The component material of the pixel definition layer can be a hydrophobic positive or negative type. Photosensitive resin material; forming a light-emitting layer in the opening area of the pixel defining layer, the light-emitting layer can be produced by an inkjet printing process; forming a cathode layer on the light-emitting layer.

Wherein, when the display panel is of the bottom emission type, the cathode layer can be made into a cathode with high reflectivity. For example, the constituent material of the cathode layer can be a metal material that is not limited to Al and Ag; When the panel is of a top emission type, the cathode layer can be made into a transparent cathode to achieve a light transmission effect.

The beneficial effects of the present invention are: the present invention provides a display panel, a manufacturing method thereof, and a display device. The display panel and the display device are compared with the prior art: the anode layer and the light shielding layer are made by only one photomask, the gate layer and The gate insulating layer is made by only one photomask, and the process of passivation layer and flat layer is also avoided through design improvements. The solution reduces the manufacturing cost of the display panel by optimizing the film structure of the display panel, and improves the manufacturing efficiency and yield of the display panel.

The structure of the display panel and the display device including the display panel provided by the embodiments of the present invention and the method of manufacturing the display panel are described in detail above. Specific examples are used in this article to illustrate the principles and implementations of the present invention. The descriptions of the above embodiments are only used to help understand the technical solutions and core ideas of the present invention; those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or modify some of the technologies. The features are equivalently replaced; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims (18)

A display panel, which includes: Substrate An anode layer, the anode layer is provided on the substrate; A light-shielding layer, the light-shielding layer is provided on the anode layer; The thin film transistor layer is provided on the light shielding layer. 7. The display panel of claim 1, wherein the thin film transistor layer comprises: Active layer A gate insulating layer, the gate insulating layer being disposed on the active layer; A gate layer, the gate layer is provided on the gate insulating layer; An inter-insulating layer, the inter-insulating layer is provided on the gate layer and the active layer; A source-drain layer, the source-drain layer is disposed on the inter-insulating layer, the source-drain layer is electrically connected to the active layer, and the source-drain layer is electrically connected to the light shielding layer , So that the active layer and the anode layer are electrically connected. The display panel of claim 2, wherein the display panel further comprises a first through hole, the first through hole is provided on the inter-insulating layer, and the first through hole is used to electrically connect The active layer and the source drain layer. The display panel of claim 3, wherein the display panel further comprises: A buffer layer, the buffer layer is provided between the light shielding layer and the thin film transistor layer, and the inter-insulating layer is also provided on the buffer layer; A second through hole, the second through hole is provided on the inter-insulating layer and the buffer layer, and the second through hole is used to electrically connect the source drain layer and the light shielding layer. 3. The display panel of claim 2, wherein the gate insulating layer and the gate layer have the same width. 3. The display panel of claim 1, wherein the display panel further comprises a pixel definition layer, and the pixel definition layer is provided on the inter-insulating layer and the source/drain layer. 7. The display panel of claim 6, wherein the display panel further comprises a light-emitting layer, and the light-emitting layer is disposed in an opening area of the pixel definition layer. The display panel of claim 1, wherein the constituent material of the light shielding layer is an opaque conductive material. A display device, wherein the display device includes a display panel, and the display panel includes: Substrate An anode layer, the anode layer is provided on the substrate; A light-shielding layer, the light-shielding layer is provided on the anode layer; The thin film transistor layer is provided on the light shielding layer. 9. The display device of claim 9, wherein the thin film transistor layer comprises: Active layer A gate insulating layer, the gate insulating layer being disposed on the active layer; A gate layer, the gate layer is provided on the gate insulating layer; An inter-insulating layer, the inter-insulating layer is provided on the gate layer and the active layer; A source-drain layer, the source-drain layer is disposed on the inter-insulating layer, the source-drain layer is electrically connected to the active layer, and the source-drain layer is electrically connected to the light shielding layer , So that the active layer and the anode layer are electrically connected. 10. The display device of claim 10, wherein the display panel further comprises a first through hole, the first through hole is provided on the inter-insulating layer, and the first through hole is used to electrically connect the The active layer and the source drain layer. 11. The display device of claim 11, wherein the display panel further comprises: A buffer layer, the buffer layer is provided between the light shielding layer and the thin film transistor layer, and the inter-insulating layer is also provided on the buffer layer; A second through hole, the second through hole is provided on the inter-insulating layer and the buffer layer, and the second through hole is used to electrically connect the source drain layer and the light shielding layer. 10. The display panel of claim 10, wherein the gate insulating layer and the gate layer have the same width. 9. The display panel of claim 9, wherein the display panel further comprises a pixel definition layer, and the pixel definition layer is provided on the inter-insulating layer and the source and drain layers. 14. The display panel of claim 14, wherein the display panel further comprises a light-emitting layer, and the light-emitting layer is disposed in an opening area of the pixel definition layer. 9. The display panel of claim 9, wherein the constituent material of the light shielding layer is an opaque conductive material. A method for manufacturing a display panel, including: Provide a substrate; Forming an anode film on the substrate; Forming a light shielding film on the anode film; Forming a photoresist layer on the light shielding film; Using the photoresist layer as a protective layer to etch the light shielding film and the anode film to form an anode layer and a light shielding layer; Peeling off the photoresist layer; A thin film transistor layer is formed on the light shielding layer. 17. The manufacturing method of claim 17, wherein forming a thin film transistor layer on the light shielding layer comprises: Forming an active layer on the light shielding layer; Forming a gate insulating film on the active layer; Forming a gate film on the gate insulating film; Forming a photoresist layer on the gate film; Using the photoresist layer as a protective layer to etch the gate film to form a gate layer; Using the photoresist layer and the gate layer as protective layers to etch the gate insulating film to form a gate insulating layer; Peeling off the photoresist layer; Forming an inter-insulating layer on the gate layer; A source and drain layer is formed on the insulating layer to obtain the thin film transistor layer.