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WO2020222771A1 - Support pin apparatus for substrate processing chambers - Google Patents

Support pin apparatus for substrate processing chambers Download PDF

Info

Publication number
WO2020222771A1
WO2020222771A1 PCT/US2019/029734 US2019029734W WO2020222771A1 WO 2020222771 A1 WO2020222771 A1 WO 2020222771A1 US 2019029734 W US2019029734 W US 2019029734W WO 2020222771 A1 WO2020222771 A1 WO 2020222771A1
Authority
WO
WIPO (PCT)
Prior art keywords
pedestal
support
support pins
substrate processing
disposed
Prior art date
Application number
PCT/US2019/029734
Other languages
French (fr)
Inventor
Jun Li
Jrjyan Jerry Chen
Shouqian Shao
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/US2019/029734 priority Critical patent/WO2020222771A1/en
Publication of WO2020222771A1 publication Critical patent/WO2020222771A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Definitions

  • aspects of the present disclosure relate generally to apparatuses for substrate processing chambers, including support pins for substrate processing chambers.
  • Pedestals are used in substrate processing chambers to support substrates during processing operations.
  • the substrate processing chambers include gaps between support pins in the pedestal and the substrates being processed.
  • the gaps cause nonuniform deposition and associated mura to occur during and after processing, resulting in substrate defects.
  • the gaps also cause changes in capacitance, which result in arcing and non-uniformities in the deposited film.
  • CVD chemical vapor deposition
  • aspects of the present disclosure relate generally to apparatuses for substrate processing chambers, including support pins for substrate processing chambers.
  • a substrate processing chamber includes a chamber body and a pedestal disposed in the chamber body.
  • the pedestal includes a support surface to support a substrate thereon and one or more openings formed in the pedestal. Each of the one or more openings defines a shoulder.
  • the substrate processing chamber also includes one or more support pins disposed in the one or more openings of the pedestal. Each of the one or more support pins is disposed in one of the one or more openings of the pedestal and movable relative to the support surface of the pedestal.
  • the substrate processing chamber also includes one or more mechanical springs in contact with the one or more support pins to apply a biasing force to the one or more support pins to bias each one of the one or more support pins relative to the support surface of the pedestal and in a direction towards the support surface of the pedestal and away from the respective shoulder.
  • a substrate processing chamber includes a chamber body and a pedestal disposed in the chamber body.
  • the pedestal includes a support surface to support a substrate thereon and one or more openings formed in the pedestal.
  • Each of the one or more openings includes a first portion defining a first inner surface of the pedestal, a second portion below the first portion defining a second inner surface of the pedestal, and a shoulder between the first inner surface and the second inner surface.
  • the second portion is narrower than the first portion.
  • the substrate processing chamber also includes one or more support pins disposed in the one or more openings of the pedestal.
  • Each of the one or more support pins is disposed in one of the one or more openings of the pedestal and includes a head portion and a shaft portion.
  • the head portion has a diameter wider than the second portion of the respective one of the one or more openings.
  • the substrate processing chamber also includes one or more mechanical springs in contact with the one or more support pins. Each of the one or more mechanical springs is disposed between the head portion of the respective one of the one or more support pins and the respective shoulder of the pedestal.
  • a substrate processing chamber includes a chamber body having a bottom surface and a pedestal disposed in the chamber body.
  • the pedestal includes a support surface to support a substrate thereon and one or more openings formed in the pedestal.
  • Each of the one or more openings includes a first portion defining a first inner surface of the pedestal, a second portion below the first portion defining a second inner surface of the pedestal, and a shoulder between the first inner surface and the second inner surface.
  • the second portion is narrower than the first portion.
  • the substrate processing chamber also includes one or more support pins disposed in the one or more openings of the pedestal.
  • Each of the one or more support pins is disposed in one of the one or more openings of the pedestal and includes a head portion and a shaft portion.
  • the head portion has a diameter wider than the second portion of the respective one of the one or more openings.
  • the substrate processing chamber also includes one or more mechanical springs disposed adjacent to the bottom surface of the chamber body and in contact with the shaft portion of the respective one of the one or more support pins.
  • Figure 1A is a schematic cross-sectional view of a substrate processing chamber 100, according to one implementation.
  • Figure 1 B is a schematic cross-sectional view of the substrate processing chamber illustrated in Figure 1A, according to one implementation.
  • Figure 2A is an enlarged schematic view of the substrate processing chamber illustrated in Figures 1A and 1 B, according to one implementation.
  • Figure 2B is an enlarged schematic view of the substrate processing chamber illustrated in Figures 1A and 1 B, according to one implementation.
  • Figure 3 is a partial schematic cross-sectional view of a substrate processing chamber, according to one implementation.
  • aspects of the present disclosure relate generally to apparatuses for substrate processing chambers.
  • FIG. 1A is a schematic cross-sectional view of a substrate processing chamber 100, according to one implementation.
  • the substrate processing chamber 100 is configured to process flexible media, such as a substrate 101 , using plasma to form structures and devices on the substrate 101.
  • the substrate 101 is a large area substrate and the substrate processing chamber 100 is a CVD chamber.
  • the structures formed by the substrate processing chamber 100 may be adapted for use in the fabrication of liquid crystal displays (LCD’s), flat panel displays, organic light emitting diodes (OLED’s), or photovoltaic cells for solar cell arrays.
  • the substrate 101 may be a thin sheet of metal, plastic, organic material, silicon, glass, quartz, or polymer, among others suitable materials.
  • the substrate 101 may have a surface area greater than about 1 square meter, such as greater than about 2 square meters.
  • the structures formed on the substrate 101 include one or more junctions used to form part of a thin film photovoltaic device or solar cell.
  • the structures may be a part of a thin film transistor (TFT) used to form a LCD or TFT type device.
  • TFT thin film transistor
  • the substrate processing chamber 100 may be adapted to process substrates of other sizes and types, and may be used to fabricate other structures.
  • the substrate processing chamber 100 includes a chamber body 102 having a sidewall 117, a bottom surface 119, and a backing plate 108 defining a processing volume 111.
  • a lid 140 is disposed over the backing plate 108.
  • a substrate support or pedestal 104 is disposed in the processing volume 111 opposing a showerhead assembly 114 (sometimes referred to as a diffuser).
  • the pedestal 104 includes a support surface 107 on an upper side thereof that is adapted to support the substrate 101 during processing.
  • the substrate 101 includes a lower surface 110. At least a portion of the lower surface 110 of the substrate 101 contacts at least a portion of the support surface 107 of the pedestal 104 when the substrate 101 is supported by the pedestal 104.
  • the pedestal 104 is coupled to an actuator 138 via a hollow shaft 137.
  • the actuator 138 is configured to move the pedestal 104 at least vertically to facilitate transferring of the substrate 101 and/or adjust a distance between the substrate 101 and the showerhead assembly 114.
  • One or more support pins 130 (sometimes referred to as golf tees) extend through the pedestal 104.
  • Each of the support pins 130 is movably disposed within a corresponding opening 125 formed in the pedestal 104.
  • the support pins 130 are movable linearly upward and downward relative to the support surface 107 of the pedestal 104, the chamber body 102, the showerhead assembly 114, and/or the lower surface 110 of the substrate 101.
  • the support pins 130 can move in response to movement of the pedestal 104, and/or movement of the substrate 101.
  • An opening 123 is formed in the sidewall 117 that is used to transfer substrates (such as substrate 101) between the pedestal 104 and a transfer chamber or load lock chamber.
  • the pedestal 104 is shown in a processing position near the showerhead assembly 114.
  • the support pins 130 are adapted to be coplanar with or below the support surface 107 of the pedestal 104 to allow the substrate 101 to lie flat on the pedestal 104.
  • a processing gas source 122 is coupled by a conduit 134 to deliver process gases through the showerhead assembly 114 and into the processing volume 111.
  • the substrate processing chamber 100 also includes an exhaust system 118 configured to apply and/or maintain negative pressure to the processing volume 111.
  • a radio frequency (RF) power source 105 is coupled to the showerhead assembly 114 to facilitate formation of a plasma in a processing region 112.
  • the processing region 112 is generally defined between the showerhead assembly 114 and the support surface 107 of the pedestal 104.
  • the showerhead assembly 114, backing plate 108, and the conduit 134 are generally formed from electrically conductive materials and are in electrical communication with one another.
  • the chamber body 102 is also formed from an electrically conductive material.
  • the chamber body 102 is electrically insulated from the showerhead assembly 114.
  • the showerhead assembly 114 is mounted on the chamber body 102 by a bracket 135.
  • the pedestal 104 is also electrically conductive, and is adapted to function as a shunt electrode to facilitate a ground return path for RF energy.
  • a plurality of electrical return devices 109A, 109B may be coupled between the pedestal 104 and the sidewall 117 and/or the bottom surface 119 of the chamber body 102.
  • the substrate processing chamber 100 may be configured to deposit a variety of materials on the substrate 101 , including but not limited to dielectric materials (e.g., S1O2, SiO x N y , derivatives thereof or combinations thereof), semiconductive materials (e.g., Si and dopants thereof), and/or barrier materials (e.g., SiN x , SiO x N y or derivatives thereof).
  • dielectric materials e.g., S1O2, SiO x N y , derivatives thereof or combinations thereof
  • semiconductive materials e.g., Si and dopants thereof
  • barrier materials e.g., SiN x , SiO x N y or derivatives thereof.
  • dielectric materials and semiconductive materials that are formed or deposited by the substrate processing chamber 100 onto the substrate 101 may include epitaxial silicon, polycrystalline silicon, amorphous silicon, microcrystalline silicon, silicon germanium, germanium, silicon dioxide, silicon oxynitride, silicon nitride, dopants thereof (e.g., B, P, or As), derivatives thereof or combinations thereof.
  • the substrate processing chamber 100 is also configured to receive gases such as argon, hydrogen, nitrogen, helium, or combinations thereof, for use as a purge gas or a carrier gas (e.g., Ar, H2, N2, He, derivatives thereof, or combinations thereof).
  • deposition of silicon thin films on the substrate 101 using the substrate processing chamber 100 is accomplished by using silane as the precursor gas in a hydrogen carrier gas.
  • the showerhead assembly 114 is generally disposed opposing the support surface 107 of the pedestal 104 in a substantially parallel manner to facilitate plasma generation therebetween.
  • a temperature control device 106 is disposed within the pedestal 104 to control the temperature of the substrate 101 before, during, and/or after processing.
  • the temperature control device 106 comprises a heating element to preheat the substrate 101 prior to processing.
  • the temperature control device 106 can include one or more coolant channels to cool the substrate 101.
  • the temperature control device 106 may function to cool the substrate 101 after processing.
  • the temperature control device 106 includes coolant channels, a resistive heating element, or a combination thereof. Electrical leads for the temperature control device 106 may be routed to a power source and controller through the hollow shaft 137.
  • Figure 1 B is a schematic cross-sectional view of the substrate processing chamber 100 illustrated in Figure 1A, according to one implementation.
  • the view illustrated in Figure 1 B does not show the actuator 138 and the hollow shaft 137 illustrated in Figure 1A.
  • Figure 1 B illustrates at least one of the support pins 130 and at least one of the corresponding openings 125 disposed at a center 127 of the pedestal 104, such as a center of the support surface 107 of the pedestal 104.
  • FIG 2A is an enlarged schematic view of the substrate processing chamber 100 illustrated in Figures 1A and 1 B, according to one implementation.
  • the support pin 130 includes a head portion 128 and a shaft portion 129 extending from the head portion 128.
  • the shaft portion 129 extends through the opening 125 such that it protrudes past a lower surface 198 of the pedestal 104 that is on an opposing side from the support surface 107 of the pedestal 104.
  • the present disclosure contemplates that a lower end of the shaft portion 129 may be above the lower surface 198 of the pedestal 104.
  • the support pin 130 includes an optional sleeve 132 disposed around the shaft portion 129.
  • the sleeve 132 is a hollow tube that is made from a dielectric material, such as a ceramic material, for example S12O3 or AIN.
  • the support pin 130 is formed of an electrically conductive material, such as a metal, such as aluminum.
  • the support pin 130 may have an anodized surface.
  • One or more of the head portion 128, the shaft portion 129, and/or the optional sleeve 132 may be formed of a single body or two or more bodies.
  • the head portion 128 of the support pin 130 defines a first diameter Di.
  • the shaft portion 129 defines a second diameter D 2 that is narrower than the first diameter Di.
  • the head portion 128 includes an upper surface 195 and a lower surface 194.
  • the shaft portion 129 includes an outer surface 193.
  • the optional sleeve 132 includes an outer surface 192.
  • the opening 125 of the pedestal 104 includes a first portion 197 and a second portion 196 below the first portion 197 that is narrower than the first portion 197.
  • the first portion 197 is wider than the first diameter Di and the second diameter D 2 .
  • the second portion 196 is wider than the second diameter D 2 and narrower than the first diameter Di.
  • the first portion 197 defines a first inner surface 191 of the pedestal 104.
  • the second portion 196 defines a second inner surface 190 of the pedestal 104.
  • the pedestal 104 includes a shoulder 143 between the second inner surface 190 of the pedestal 104 and the first inner surface 191 of
  • the head portion 128 of the support pin 130 may include a variety of profiles and/or shapes.
  • an outer face 155 of the head portion 128 may include one or more fillets, chamfers, bevels, and/or tapers.
  • the substrate processing chamber 100 includes one or more springs 240 disposed in the first portion 197 of the opening 125 and around the shaft portion 129 of the support pin 130 (one is shown).
  • the one or more springs 240 include one or more mechanical spring(s).
  • the spring 240 includes an inner diameter that is larger than the second diameter D2 defined by the shaft portion 129 of the support pin 130.
  • the spring 240 is disposed between the lower surface 194 of the head portion 128 and the shoulder 143 of the pedestal 104.
  • the spring 240 is also disposed between the outer surface 193 of the shaft portion 129 and the first inner surface 191 of the pedestal 104.
  • the spring 240 is disposed between the sleeve 132 and the first inner surface 191 of the pedestal 104.
  • the spring 240 includes an upper end 241 in contact with the lower surface 194 of the head portion 128 of the support pin 130.
  • the spring 240 also includes a lower end 242 in contact with the shoulder 143 of the opening 125.
  • the spring 240 includes an outer face 244 that is in contact with the first inner surface 191 of the pedestal 104 and an inner face 245 that is in contact with the outer surface 192 of the sleeve 132.
  • the inner face 245 of the spring 240 may be in contact with the outer surface 193 of the shaft portion 129 of the support pin 130, for example, in implementations where the optional sleeve 132 is not disposed around the shaft portion 129 of the support pin 130.
  • the spring 240 may be connected to one or more components of the substrate processing chamber 100, such as the pedestal 104, support pin 130, and/or the chamber body 102.
  • the upper end 241 of the spring 240 may be connected to the head portion 104.
  • the spring 240 may be connected to one or more components of the substrate processing chamber 100 directly or indirectly using any connection device, such as pins, screws, or bolts.
  • the support pin 130 is movable upward and downward in the opening 125.
  • the spring 240 is disposed between the head portion 128 of the support pin 130 and the shoulder 143 of the pedestal 104 such that the spring 240 compresses when the support pin 130 moves downward.
  • the spring 240 is in contact with the lower surface 194 of the head portion 128 to apply a biasing force to the support pin 130 in an upward direction.
  • the biasing force applied by the spring 240 biases the support pin 130 relative to the support surface 107 of the pedestal 104 and in a direction towards the support surface 107 of the pedestal 104 and away from the respective shoulder 143.
  • the biasing force applied by the spring 240 biases the support pin 130 relative to the support surface 107 of the pedestal 104 and in an upward direction towards the support surface 107 of the pedestal 104. In one example, the biasing force applied by the spring 240 biases the support pin 130 towards a lower surface 110 of the substrate 101 disposed on the support surface 107 of the pedestal 104.
  • the spring 240 biases the support pin 130 such that the upper surface 195 of the head portion 128 is within a gap Gi from the support surface 107 of the pedestal 104.
  • the gap Gi is less than 5 Mil.
  • the spring 240 biases the support pin 130 such that the upper surface 195 of the head portion 128 is coplanar with the support surface 107 of the pedestal 104 (as illustrated in Figure 2B).
  • spring 240 biases the support pin 130 such that the upper surface 195 of the head portion 128 contacts the lower surface 110 of the substrate 101 (as illustrated in Figure 2B).
  • the gap Gi may be equal to about 0 Mil.
  • the spring 240 biases the support pin 130 such that the upper surface 195 of the head portion 128 is above the support surface 107 of the pedestal 104.
  • the upper surface 195 of the head portion 128 is initially coplanar with or above the support surface 107 of the pedestal 104.
  • a substrate 101 is placed on the support pin 130.
  • the support pin 130 lowers downwardly until the lower surface 110 of the substrate 101 contacts the support surface 107 of the pedestal 104.
  • the weight of the substrate 101 compresses the spring 240 and the spring 240 biases the support pin 130 such that upper surface 195 of the head portion 128 contacts the lower surface 110 of the substrate 101.
  • the upper surface 195 of the head portion 128 is coplanar with or above the lower surface 110 of the substrate 101.
  • the spring 240 biases the support pin 130 to reduce or eliminate a gap between the upper surface 195 of the head portion 128 and the substrate 101 while reducing or eliminating the probability of damage to the substrate 101. Should a damaging force occur between the lower surface 110 of the substrate 101 and the upper surface 195 of the head portion 128, the spring 240 absorbs at least part of the damaging force, thereby mitigating damage to the substrate 101.
  • the spring 240 also allows the support pin 130 to move downwards relative to the pedestal 104 in response to a force occurring on the upper surface 195 of the head portion 128. As an example, the substrate 101 might move the support pin 130 downwards when the substrate 101 is placed onto the support surface 107 of the pedestal 104.
  • the spring 240 allows the upper surface 195 of the head portion 128 to be placed at a gap of less than 5 Mil from the lower surface 110 of the substrate 101 while mitigating the risk of damage to the substrate 101 resulting from contact between the substrate 101 and the support pin 130.
  • Reducing or eliminating gaps between support pins and substrate 101 facilitates uniform deposition of materials onto the substrate 101 during substrate processing operations. Reducing or eliminating such gaps also facilitates reducing the development of mura on the substrate 101. Additionally, reducing or eliminating such gaps reduces or eliminates capacitance in the gaps, which facilitates uniform deposition and reduces or eliminates the probability of arcing between the substrate 101 and the support pin 130. These benefits can lead to increased throughput and lower operational costs.
  • the spring 240 is a mechanical spring and includes a wave spring washer, a die spring, a mechanical wire spring, a flat spring, any other mechanical spring, and/or any combination thereof.
  • the spring 240 has a spring constant.
  • the spring 240 has a free height when not compressed and a loaded height when fully compressed. In one example the free height, loaded height, and spring constant of spring 240 are chosen to bias upper surface 195 within the gap Gi while reducing or eliminating the probability of damage to the substrate 101. In one embodiment, which can be combined with other embodiments, the spring 240 has a spring constant of less than 200 N/m.
  • the present disclosure contemplates that one or more springs 240 may be included for each of the support pins 130 illustrated in Figures 1A and 1 B.
  • FIG. 2B is an enlarged schematic view of the substrate processing chamber 100 illustrated in Figures 1A and 1 B, according to one implementation.
  • a spring 260 is disposed between the pedestal 104 and the bottom surface 119 of the chamber body 102.
  • the spring 260 is a mechanical spring.
  • the spring 260 includes an inner diameter that is larger than the second diameter D2 defined by the shaft portion 129 of the support pin 130.
  • the spring 260 is disposed below the lower surface 198 of the pedestal 104 and adjacent to the bottom surface 119 of the chamber body 102.
  • the spring 260 is disposed between the shaft portion 129 of the support pin and a base structure 270 that is disposed on the bottom surface 119 of the chamber body 102.
  • the spring 260 is disposed within a recess 271 of the base structure 270.
  • the recess 271 defines an inner base surface 273 and an inner wall 272 of the base structure 270.
  • the spring 260 is disposed at least partially around the shaft portion 129 of the support pin 130, as illustrated in Figure 2B.
  • the spring 260 is disposed between the shaft portion 129 of the support pin 130 and the inner base surface 273 of the base structure 270.
  • An upper end 261 of the spring 260 is in contact with a lower portion 157 of the shaft portion 129, such as a lower end 156 of the shaft portion 129.
  • a lower end 262 of the spring 260 is in contact with the inner base surface 273.
  • An outer face 263 of the spring 260 is in contact with the inner wall 272 of the base structure 270.
  • the lower end 262 of the spring 260 may be in contact with the bottom surface 119 of the chamber body 102.
  • the spring 260 may be connected to one or more components of the substrate processing chamber 100.
  • the upper end 261 of the spring 260 may be connected to the shaft portion 129 of the support pin 130 and the lower end 262 may be connected to the base structure 270.
  • the spring 260 may be connected to one or more components of the substrate processing chamber 100 directly or indirectly using any connection device, such as pins, screws, or bolts.
  • the support pin 130 is movable upward and downward in the opening 125 and the base structure 270.
  • the spring 260 is disposed between the shaft portion 129 of the support pin 130 and the base structure 270 such that the spring 260 compresses when the support pin 130 moves downward.
  • the spring 260 is in contact with the shaft portion 129 to apply a biasing force to the support pin 130 in an upward direction.
  • the biasing force applied by the spring 260 biases the support pin 130 relative to the support surface 107 of the pedestal 104 and in a direction towards the support surface 107 of the pedestal 104 and away from the respective shoulder 143.
  • the biasing force applied by the spring 260 biases the support pin 130 relative to the support surface 107 of the pedestal 104 and in an upward direction towards the support surface 107 of the pedestal 104. In one example, the biasing force applied by the spring 240 biases the support pin 130 towards a lower surface 110 of the substrate 101 disposed on the support surface 107 of the pedestal 104.
  • the spring 260 biases the support pin 130 such that the upper surface 195 of the head portion 128 is within a gap Gi (illustrated in Figure 2A) from the support surface 107 of the pedestal 104.
  • the gap Gi is less than 5 Mil.
  • the spring 260 biases the support pin 130 such that the upper surface 195 of the head portion 128 is coplanar with the support surface 107 of the pedestal 104.
  • spring 260 biases the support pin 130 such that the upper surface 195 of the head portion 128 contacts the lower surface 110 of the substrate 101.
  • the gap Gi may be equal to about 0 Mil.
  • the spring 260 biases the support pin 130 such that the upper surface 195 of the head portion 128 is above the support surface 107 of the pedestal 104.
  • the upper surface 195 of the head portion 128 is initially coplanar with or above the support surface 107 of the pedestal 104.
  • a substrate 101 is placed on the support pin 130.
  • the support pin 130 lowers downwardly until the lower surface 110 of the substrate 101 contacts the support surface 107 of the pedestal 104.
  • the weight of the substrate 101 compresses the spring 260 and the spring 260 biases the support pin 130 such that upper surface 195 of the head portion 128 contacts the lower surface 110 of the substrate 101.
  • the upper surface 195 of the head portion 128 is coplanar with or above the lower surface 110 of the substrate 101.
  • the spring 260 is similar to the spring 240 illustrated in Figure 2A, and may include one or more aspects, properties, features, components, and/or elements thereof.
  • the present disclosure contemplates that one or more springs 260 and/or one or more base structures 270 may be included for each of the support pins 130 illustrated in Figures 1A and 1 B.
  • FIG 3 is a partial schematic cross-sectional view of a substrate processing chamber 300, according to one implementation.
  • the substrate processing chamber 300 does not include the spring 240 illustrated in Figure 2A or the spring 260 illustrated in Figure 2B.
  • a support pin 330 is disposed in an opening 325 of a pedestal 304.
  • a substrate 301 is disposed on a support surface 307 of the pedestal 304.
  • the support pin 330 is disposed such that a gap G2 is between the support pin 330 and a lower surface 310 of the substrate 301.
  • a head portion 328 of the support pin 330 rests on a shoulder 343 of the pedestal 304. Without a gap G2, the substrate 301 may contact the support pin 330.
  • Such contact can result in a damaging force being applied to the substrate 301 that results in damage to the substrate 301.
  • the risk of a damaging force can be heightened for a substrate 301 that is relatively large compared to other substrates.
  • the damaging force is absorbed by the substrate 301 because the support pin 330 rests on the shoulder 343 of the pedestal 304 and is not able to move relative to the pedestal 304 past the shoulder 343.
  • reducing the gap G2 illustrated in Figure 3 such as to a gap G2 less than 5 Mil, increases the risk that the substrate 301 will contact the support pin 330 in such a way that a damaging force is applied to the substrate 301.
  • Benefits of the present disclosure include reducing or eliminating gaps between support pins and substrates; reducing or eliminating gaps between support pins and a support surface of a pedestal; uniform deposition of materials onto substrates; reduced or eliminated probability of mura occurring on substrates; reducing or eliminating capacitance in gaps; reducing or eliminating arcing; reducing or eliminating the probability damage to substrates; increased throughput; and lower operational costs.
  • aspects of the present disclosure include one or more springs in contact with one or more support pins; one or more springs disposed between a head portion of one of one or more support pins and a shoulder of a pedestal; one or more springs disposed adjacent to a bottom surface of a chamber body and in contact with a shaft portion of one of one or more support pins; one or more springs having a spring constant of less than 200 N/m; and one or more springs that position one or more support pins within a gap of less than about 5 Mil from a support surface of a pedestal. It is contemplated that one or more of these aspects disclosed herein may be combined. Moreover, it is contemplated that one or more of these aspects may include some or all of the aforementioned benefits.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

Aspects of the present disclosure relate generally to apparatuses for substrate processing chambers, including support pins for substrate processing chambers. In one implementation, a substrate processing chamber includes a chamber body and a pedestal disposed in the chamber body. The pedestal includes a support surface to support a substrate thereon and one or more openings formed in the pedestal. Each of the one or more openings defines a shoulder. The substrate processing chamber also includes one or more support pins disposed in the one or more openings of the pedestal. Each of the one or more support pins is disposed in one of the one or more openings of the pedestal and movable relative to the support surface of the pedestal. The substrate processing chamber also includes one or more mechanical springs in contact with the one or more support pins.

Description

SUPPORT PIN APPARATUS FOR SUBSTRATE PROCESSING CHAMBERS
BACKGROUND
Field
[0001] Aspects of the present disclosure relate generally to apparatuses for substrate processing chambers, including support pins for substrate processing chambers.
Description of the Related Art
[0002] Pedestals are used in substrate processing chambers to support substrates during processing operations. The substrate processing chambers include gaps between support pins in the pedestal and the substrates being processed. The gaps cause nonuniform deposition and associated mura to occur during and after processing, resulting in substrate defects. The gaps also cause changes in capacitance, which result in arcing and non-uniformities in the deposited film. These problems have persisted for two or more decades, and can be magnified for large chemical vapor deposition (CVD) chambers that are used to process relatively large substrates. However, closing the gap between the substrates and support pins risks damaging the substrates. The risk of damaging substrates can be heightened for substrates that are relatively larger compared to other substrates.
[0003] Therefore, there is a need for an apparatus for substrate processing chambers that reduces or eliminates such gaps and reduces or eliminates damage to substrates during processing.
SUMMARY
[0004] Aspects of the present disclosure relate generally to apparatuses for substrate processing chambers, including support pins for substrate processing chambers.
[0005] In one implementation, a substrate processing chamber includes a chamber body and a pedestal disposed in the chamber body. The pedestal includes a support surface to support a substrate thereon and one or more openings formed in the pedestal. Each of the one or more openings defines a shoulder. The substrate processing chamber also includes one or more support pins disposed in the one or more openings of the pedestal. Each of the one or more support pins is disposed in one of the one or more openings of the pedestal and movable relative to the support surface of the pedestal. The substrate processing chamber also includes one or more mechanical springs in contact with the one or more support pins to apply a biasing force to the one or more support pins to bias each one of the one or more support pins relative to the support surface of the pedestal and in a direction towards the support surface of the pedestal and away from the respective shoulder.
[0006] In one implementation, a substrate processing chamber includes a chamber body and a pedestal disposed in the chamber body. The pedestal includes a support surface to support a substrate thereon and one or more openings formed in the pedestal. Each of the one or more openings includes a first portion defining a first inner surface of the pedestal, a second portion below the first portion defining a second inner surface of the pedestal, and a shoulder between the first inner surface and the second inner surface. The second portion is narrower than the first portion. The substrate processing chamber also includes one or more support pins disposed in the one or more openings of the pedestal. Each of the one or more support pins is disposed in one of the one or more openings of the pedestal and includes a head portion and a shaft portion. The head portion has a diameter wider than the second portion of the respective one of the one or more openings. The substrate processing chamber also includes one or more mechanical springs in contact with the one or more support pins. Each of the one or more mechanical springs is disposed between the head portion of the respective one of the one or more support pins and the respective shoulder of the pedestal.
[0007] In one implementation, a substrate processing chamber includes a chamber body having a bottom surface and a pedestal disposed in the chamber body. The pedestal includes a support surface to support a substrate thereon and one or more openings formed in the pedestal. Each of the one or more openings includes a first portion defining a first inner surface of the pedestal, a second portion below the first portion defining a second inner surface of the pedestal, and a shoulder between the first inner surface and the second inner surface. The second portion is narrower than the first portion. The substrate processing chamber also includes one or more support pins disposed in the one or more openings of the pedestal. Each of the one or more support pins is disposed in one of the one or more openings of the pedestal and includes a head portion and a shaft portion. The head portion has a diameter wider than the second portion of the respective one of the one or more openings. The substrate processing chamber also includes one or more mechanical springs disposed adjacent to the bottom surface of the chamber body and in contact with the shaft portion of the respective one of the one or more support pins.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] So that the manner in which the above recited features of the disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to implementations, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only common implementations of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective implementations.
[0009] Figure 1A is a schematic cross-sectional view of a substrate processing chamber 100, according to one implementation.
[0010] Figure 1 B is a schematic cross-sectional view of the substrate processing chamber illustrated in Figure 1A, according to one implementation.
[0011] Figure 2A is an enlarged schematic view of the substrate processing chamber illustrated in Figures 1A and 1 B, according to one implementation.
[0012] Figure 2B is an enlarged schematic view of the substrate processing chamber illustrated in Figures 1A and 1 B, according to one implementation.
[0013] Figure 3 is a partial schematic cross-sectional view of a substrate processing chamber, according to one implementation.
[0014] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one implementation may be beneficially utilized on other implementations without specific recitation.
DETAILED DESCRIPTION
[0015] Aspects of the present disclosure relate generally to apparatuses for substrate processing chambers.
[0016] Figure 1A is a schematic cross-sectional view of a substrate processing chamber 100, according to one implementation. In one example, the substrate processing chamber 100 is configured to process flexible media, such as a substrate 101 , using plasma to form structures and devices on the substrate 101. The substrate 101 is a large area substrate and the substrate processing chamber 100 is a CVD chamber. The structures formed by the substrate processing chamber 100 may be adapted for use in the fabrication of liquid crystal displays (LCD’s), flat panel displays, organic light emitting diodes (OLED’s), or photovoltaic cells for solar cell arrays. The substrate 101 may be a thin sheet of metal, plastic, organic material, silicon, glass, quartz, or polymer, among others suitable materials. The substrate 101 may have a surface area greater than about 1 square meter, such as greater than about 2 square meters. The structures formed on the substrate 101 include one or more junctions used to form part of a thin film photovoltaic device or solar cell. In one implementation, the structures may be a part of a thin film transistor (TFT) used to form a LCD or TFT type device. It is also contemplated that the substrate processing chamber 100 may be adapted to process substrates of other sizes and types, and may be used to fabricate other structures.
[0017] The substrate processing chamber 100 includes a chamber body 102 having a sidewall 117, a bottom surface 119, and a backing plate 108 defining a processing volume 111. A lid 140 is disposed over the backing plate 108. A substrate support or pedestal 104 is disposed in the processing volume 111 opposing a showerhead assembly 114 (sometimes referred to as a diffuser). The pedestal 104 includes a support surface 107 on an upper side thereof that is adapted to support the substrate 101 during processing. The substrate 101 includes a lower surface 110. At least a portion of the lower surface 110 of the substrate 101 contacts at least a portion of the support surface 107 of the pedestal 104 when the substrate 101 is supported by the pedestal 104.
[0018] The pedestal 104 is coupled to an actuator 138 via a hollow shaft 137. The actuator 138 is configured to move the pedestal 104 at least vertically to facilitate transferring of the substrate 101 and/or adjust a distance between the substrate 101 and the showerhead assembly 114. One or more support pins 130 (sometimes referred to as golf tees) extend through the pedestal 104. Each of the support pins 130 is movably disposed within a corresponding opening 125 formed in the pedestal 104. The support pins 130 are movable linearly upward and downward relative to the support surface 107 of the pedestal 104, the chamber body 102, the showerhead assembly 114, and/or the lower surface 110 of the substrate 101. As an example, the support pins 130 can move in response to movement of the pedestal 104, and/or movement of the substrate 101.
[0019] An opening 123 is formed in the sidewall 117 that is used to transfer substrates (such as substrate 101) between the pedestal 104 and a transfer chamber or load lock chamber.
[0020] In Figure 1A, the pedestal 104 is shown in a processing position near the showerhead assembly 114. In the processing position, the support pins 130 are adapted to be coplanar with or below the support surface 107 of the pedestal 104 to allow the substrate 101 to lie flat on the pedestal 104. A processing gas source 122 is coupled by a conduit 134 to deliver process gases through the showerhead assembly 114 and into the processing volume 111. The substrate processing chamber 100 also includes an exhaust system 118 configured to apply and/or maintain negative pressure to the processing volume 111. A radio frequency (RF) power source 105 is coupled to the showerhead assembly 114 to facilitate formation of a plasma in a processing region 112. The processing region 112 is generally defined between the showerhead assembly 114 and the support surface 107 of the pedestal 104.
[0021] The showerhead assembly 114, backing plate 108, and the conduit 134 are generally formed from electrically conductive materials and are in electrical communication with one another. The chamber body 102 is also formed from an electrically conductive material. The chamber body 102 is electrically insulated from the showerhead assembly 114. In one example, the showerhead assembly 114 is mounted on the chamber body 102 by a bracket 135. In one example, the pedestal 104 is also electrically conductive, and is adapted to function as a shunt electrode to facilitate a ground return path for RF energy. A plurality of electrical return devices 109A, 109B may be coupled between the pedestal 104 and the sidewall 117 and/or the bottom surface 119 of the chamber body 102.
[0022] Using a process gas from the processing gas source 122, the substrate processing chamber 100 may be configured to deposit a variety of materials on the substrate 101 , including but not limited to dielectric materials (e.g., S1O2, SiOxNy, derivatives thereof or combinations thereof), semiconductive materials (e.g., Si and dopants thereof), and/or barrier materials (e.g., SiNx, SiOxNy or derivatives thereof). Specific examples of dielectric materials and semiconductive materials that are formed or deposited by the substrate processing chamber 100 onto the substrate 101 may include epitaxial silicon, polycrystalline silicon, amorphous silicon, microcrystalline silicon, silicon germanium, germanium, silicon dioxide, silicon oxynitride, silicon nitride, dopants thereof (e.g., B, P, or As), derivatives thereof or combinations thereof. The substrate processing chamber 100 is also configured to receive gases such as argon, hydrogen, nitrogen, helium, or combinations thereof, for use as a purge gas or a carrier gas (e.g., Ar, H2, N2, He, derivatives thereof, or combinations thereof). In one example, deposition of silicon thin films on the substrate 101 using the substrate processing chamber 100 is accomplished by using silane as the precursor gas in a hydrogen carrier gas. The showerhead assembly 114 is generally disposed opposing the support surface 107 of the pedestal 104 in a substantially parallel manner to facilitate plasma generation therebetween.
[0023] A temperature control device 106 is disposed within the pedestal 104 to control the temperature of the substrate 101 before, during, and/or after processing. In one aspect, the temperature control device 106 comprises a heating element to preheat the substrate 101 prior to processing. The temperature control device 106 can include one or more coolant channels to cool the substrate 101. In one aspect, the temperature control device 106 may function to cool the substrate 101 after processing. Thus, the temperature control device 106 includes coolant channels, a resistive heating element, or a combination thereof. Electrical leads for the temperature control device 106 may be routed to a power source and controller through the hollow shaft 137.
[0024] Figure 1 B is a schematic cross-sectional view of the substrate processing chamber 100 illustrated in Figure 1A, according to one implementation. The view illustrated in Figure 1 B does not show the actuator 138 and the hollow shaft 137 illustrated in Figure 1A. Figure 1 B illustrates at least one of the support pins 130 and at least one of the corresponding openings 125 disposed at a center 127 of the pedestal 104, such as a center of the support surface 107 of the pedestal 104.
[0025] Figure 2A is an enlarged schematic view of the substrate processing chamber 100 illustrated in Figures 1A and 1 B, according to one implementation. The support pin 130 includes a head portion 128 and a shaft portion 129 extending from the head portion 128. The shaft portion 129 extends through the opening 125 such that it protrudes past a lower surface 198 of the pedestal 104 that is on an opposing side from the support surface 107 of the pedestal 104. The present disclosure contemplates that a lower end of the shaft portion 129 may be above the lower surface 198 of the pedestal 104. The support pin 130 includes an optional sleeve 132 disposed around the shaft portion 129. The sleeve 132 is a hollow tube that is made from a dielectric material, such as a ceramic material, for example S12O3 or AIN. The support pin 130 is formed of an electrically conductive material, such as a metal, such as aluminum. The support pin 130 may have an anodized surface. One or more of the head portion 128, the shaft portion 129, and/or the optional sleeve 132 may be formed of a single body or two or more bodies.
[0026] The head portion 128 of the support pin 130 defines a first diameter Di. The shaft portion 129 defines a second diameter D2 that is narrower than the first diameter Di. The head portion 128 includes an upper surface 195 and a lower surface 194. The shaft portion 129 includes an outer surface 193. The optional sleeve 132 includes an outer surface 192. The opening 125 of the pedestal 104 includes a first portion 197 and a second portion 196 below the first portion 197 that is narrower than the first portion 197. The first portion 197 is wider than the first diameter Di and the second diameter D2. The second portion 196 is wider than the second diameter D2 and narrower than the first diameter Di. The first portion 197 defines a first inner surface 191 of the pedestal 104. The second portion 196 defines a second inner surface 190 of the pedestal 104. The pedestal 104 includes a shoulder 143 between the second inner surface 190 of the pedestal 104 and the first inner surface 191 of the pedestal 104.
[0027] The present disclosure contemplates that the head portion 128 of the support pin 130 may include a variety of profiles and/or shapes. As an example, an outer face 155 of the head portion 128 may include one or more fillets, chamfers, bevels, and/or tapers.
[0028] The substrate processing chamber 100 includes one or more springs 240 disposed in the first portion 197 of the opening 125 and around the shaft portion 129 of the support pin 130 (one is shown). The one or more springs 240 include one or more mechanical spring(s). In one example, the spring 240 includes an inner diameter that is larger than the second diameter D2 defined by the shaft portion 129 of the support pin 130. The spring 240 is disposed between the lower surface 194 of the head portion 128 and the shoulder 143 of the pedestal 104. The spring 240 is also disposed between the outer surface 193 of the shaft portion 129 and the first inner surface 191 of the pedestal 104. In examples where the optional sleeve 132 is included, the spring 240 is disposed between the sleeve 132 and the first inner surface 191 of the pedestal 104. The spring 240 includes an upper end 241 in contact with the lower surface 194 of the head portion 128 of the support pin 130. The spring 240 also includes a lower end 242 in contact with the shoulder 143 of the opening 125. The spring 240 includes an outer face 244 that is in contact with the first inner surface 191 of the pedestal 104 and an inner face 245 that is in contact with the outer surface 192 of the sleeve 132. The inner face 245 of the spring 240 may be in contact with the outer surface 193 of the shaft portion 129 of the support pin 130, for example, in implementations where the optional sleeve 132 is not disposed around the shaft portion 129 of the support pin 130.
[0029] The present disclosure contemplates that the spring 240 may be connected to one or more components of the substrate processing chamber 100, such as the pedestal 104, support pin 130, and/or the chamber body 102. As an example, the upper end 241 of the spring 240 may be connected to the head portion 104. The spring 240 may be connected to one or more components of the substrate processing chamber 100 directly or indirectly using any connection device, such as pins, screws, or bolts.
[0030] The support pin 130 is movable upward and downward in the opening 125. The spring 240 is disposed between the head portion 128 of the support pin 130 and the shoulder 143 of the pedestal 104 such that the spring 240 compresses when the support pin 130 moves downward. The spring 240 is in contact with the lower surface 194 of the head portion 128 to apply a biasing force to the support pin 130 in an upward direction. The biasing force applied by the spring 240 biases the support pin 130 relative to the support surface 107 of the pedestal 104 and in a direction towards the support surface 107 of the pedestal 104 and away from the respective shoulder 143. In one example, the biasing force applied by the spring 240 biases the support pin 130 relative to the support surface 107 of the pedestal 104 and in an upward direction towards the support surface 107 of the pedestal 104. In one example, the biasing force applied by the spring 240 biases the support pin 130 towards a lower surface 110 of the substrate 101 disposed on the support surface 107 of the pedestal 104.
[0031] The spring 240 biases the support pin 130 such that the upper surface 195 of the head portion 128 is within a gap Gi from the support surface 107 of the pedestal 104. The gap Gi is less than 5 Mil. In one embodiment, which can be combined with other embodiments, the spring 240 biases the support pin 130 such that the upper surface 195 of the head portion 128 is coplanar with the support surface 107 of the pedestal 104 (as illustrated in Figure 2B). In one embodiment, which can be combined with other embodiments, spring 240 biases the support pin 130 such that the upper surface 195 of the head portion 128 contacts the lower surface 110 of the substrate 101 (as illustrated in Figure 2B). In such an embodiment, the gap Gi may be equal to about 0 Mil. In one embodiment, which can be combined with other embodiments, the spring 240 biases the support pin 130 such that the upper surface 195 of the head portion 128 is above the support surface 107 of the pedestal 104.
[0032] In one example, the upper surface 195 of the head portion 128 is initially coplanar with or above the support surface 107 of the pedestal 104. A substrate 101 is placed on the support pin 130. The support pin 130 lowers downwardly until the lower surface 110 of the substrate 101 contacts the support surface 107 of the pedestal 104. As the substrate 101 is supported by the support surface 107 of the pedestal 104, the weight of the substrate 101 compresses the spring 240 and the spring 240 biases the support pin 130 such that upper surface 195 of the head portion 128 contacts the lower surface 110 of the substrate 101. In one example, the upper surface 195 of the head portion 128 is coplanar with or above the lower surface 110 of the substrate 101.
[0033] The spring 240 biases the support pin 130 to reduce or eliminate a gap between the upper surface 195 of the head portion 128 and the substrate 101 while reducing or eliminating the probability of damage to the substrate 101. Should a damaging force occur between the lower surface 110 of the substrate 101 and the upper surface 195 of the head portion 128, the spring 240 absorbs at least part of the damaging force, thereby mitigating damage to the substrate 101. The spring 240 also allows the support pin 130 to move downwards relative to the pedestal 104 in response to a force occurring on the upper surface 195 of the head portion 128. As an example, the substrate 101 might move the support pin 130 downwards when the substrate 101 is placed onto the support surface 107 of the pedestal 104. Hence, the spring 240 allows the upper surface 195 of the head portion 128 to be placed at a gap of less than 5 Mil from the lower surface 110 of the substrate 101 while mitigating the risk of damage to the substrate 101 resulting from contact between the substrate 101 and the support pin 130.
[0034] Reducing or eliminating gaps between support pins and substrate 101 facilitates uniform deposition of materials onto the substrate 101 during substrate processing operations. Reducing or eliminating such gaps also facilitates reducing the development of mura on the substrate 101. Additionally, reducing or eliminating such gaps reduces or eliminates capacitance in the gaps, which facilitates uniform deposition and reduces or eliminates the probability of arcing between the substrate 101 and the support pin 130. These benefits can lead to increased throughput and lower operational costs.
[0035] The spring 240 is a mechanical spring and includes a wave spring washer, a die spring, a mechanical wire spring, a flat spring, any other mechanical spring, and/or any combination thereof. The spring 240 has a spring constant. The spring 240 has a free height when not compressed and a loaded height when fully compressed. In one example the free height, loaded height, and spring constant of spring 240 are chosen to bias upper surface 195 within the gap Gi while reducing or eliminating the probability of damage to the substrate 101. In one embodiment, which can be combined with other embodiments, the spring 240 has a spring constant of less than 200 N/m.
[0036] The present disclosure contemplates that one or more springs 240 may be included for each of the support pins 130 illustrated in Figures 1A and 1 B.
[0037] Figure 2B is an enlarged schematic view of the substrate processing chamber 100 illustrated in Figures 1A and 1 B, according to one implementation. A spring 260 is disposed between the pedestal 104 and the bottom surface 119 of the chamber body 102. The spring 260 is a mechanical spring. In one example, the spring 260 includes an inner diameter that is larger than the second diameter D2 defined by the shaft portion 129 of the support pin 130. The spring 260 is disposed below the lower surface 198 of the pedestal 104 and adjacent to the bottom surface 119 of the chamber body 102. The spring 260 is disposed between the shaft portion 129 of the support pin and a base structure 270 that is disposed on the bottom surface 119 of the chamber body 102. The spring 260 is disposed within a recess 271 of the base structure 270. The recess 271 defines an inner base surface 273 and an inner wall 272 of the base structure 270.
[0038] The spring 260 is disposed at least partially around the shaft portion 129 of the support pin 130, as illustrated in Figure 2B. The spring 260 is disposed between the shaft portion 129 of the support pin 130 and the inner base surface 273 of the base structure 270. An upper end 261 of the spring 260 is in contact with a lower portion 157 of the shaft portion 129, such as a lower end 156 of the shaft portion 129. A lower end 262 of the spring 260 is in contact with the inner base surface 273. An outer face 263 of the spring 260 is in contact with the inner wall 272 of the base structure 270. The lower end 262 of the spring 260 may be in contact with the bottom surface 119 of the chamber body 102. [0039] The present disclosure contemplates that the spring 260 may be connected to one or more components of the substrate processing chamber 100. As an example, the upper end 261 of the spring 260 may be connected to the shaft portion 129 of the support pin 130 and the lower end 262 may be connected to the base structure 270. The spring 260 may be connected to one or more components of the substrate processing chamber 100 directly or indirectly using any connection device, such as pins, screws, or bolts.
[0040] The support pin 130 is movable upward and downward in the opening 125 and the base structure 270. The spring 260 is disposed between the shaft portion 129 of the support pin 130 and the base structure 270 such that the spring 260 compresses when the support pin 130 moves downward. The spring 260 is in contact with the shaft portion 129 to apply a biasing force to the support pin 130 in an upward direction. The biasing force applied by the spring 260 biases the support pin 130 relative to the support surface 107 of the pedestal 104 and in a direction towards the support surface 107 of the pedestal 104 and away from the respective shoulder 143. In one example, the biasing force applied by the spring 260 biases the support pin 130 relative to the support surface 107 of the pedestal 104 and in an upward direction towards the support surface 107 of the pedestal 104. In one example, the biasing force applied by the spring 240 biases the support pin 130 towards a lower surface 110 of the substrate 101 disposed on the support surface 107 of the pedestal 104.
[0041] The spring 260 biases the support pin 130 such that the upper surface 195 of the head portion 128 is within a gap Gi (illustrated in Figure 2A) from the support surface 107 of the pedestal 104. The gap Gi is less than 5 Mil. In one embodiment, which can be combined with other embodiments, the spring 260 biases the support pin 130 such that the upper surface 195 of the head portion 128 is coplanar with the support surface 107 of the pedestal 104. In one embodiment, which can be combined with other embodiments, spring 260 biases the support pin 130 such that the upper surface 195 of the head portion 128 contacts the lower surface 110 of the substrate 101. In such an embodiment, the gap Gi may be equal to about 0 Mil. In one embodiment, which can be combined with other embodiments, the spring 260 biases the support pin 130 such that the upper surface 195 of the head portion 128 is above the support surface 107 of the pedestal 104.
[0042] In one example, the upper surface 195 of the head portion 128 is initially coplanar with or above the support surface 107 of the pedestal 104. A substrate 101 is placed on the support pin 130. The support pin 130 lowers downwardly until the lower surface 110 of the substrate 101 contacts the support surface 107 of the pedestal 104. As the substrate 101 is supported by the support surface 107 of the pedestal 104, the weight of the substrate 101 compresses the spring 260 and the spring 260 biases the support pin 130 such that upper surface 195 of the head portion 128 contacts the lower surface 110 of the substrate 101. In one example, the upper surface 195 of the head portion 128 is coplanar with or above the lower surface 110 of the substrate 101.
[0043] The spring 260 is similar to the spring 240 illustrated in Figure 2A, and may include one or more aspects, properties, features, components, and/or elements thereof.
[0044] The present disclosure contemplates that one or more springs 260 and/or one or more base structures 270 may be included for each of the support pins 130 illustrated in Figures 1A and 1 B.
[0045] Figure 3 is a partial schematic cross-sectional view of a substrate processing chamber 300, according to one implementation. The substrate processing chamber 300 does not include the spring 240 illustrated in Figure 2A or the spring 260 illustrated in Figure 2B. A support pin 330 is disposed in an opening 325 of a pedestal 304. A substrate 301 is disposed on a support surface 307 of the pedestal 304. The support pin 330 is disposed such that a gap G2 is between the support pin 330 and a lower surface 310 of the substrate 301. A head portion 328 of the support pin 330 rests on a shoulder 343 of the pedestal 304. Without a gap G2, the substrate 301 may contact the support pin 330. Such contact can result in a damaging force being applied to the substrate 301 that results in damage to the substrate 301. The risk of a damaging force can be heightened for a substrate 301 that is relatively large compared to other substrates. The damaging force is absorbed by the substrate 301 because the support pin 330 rests on the shoulder 343 of the pedestal 304 and is not able to move relative to the pedestal 304 past the shoulder 343. Hence reducing the gap G2 illustrated in Figure 3, such as to a gap G2 less than 5 Mil, increases the risk that the substrate 301 will contact the support pin 330 in such a way that a damaging force is applied to the substrate 301.
[0046] Benefits of the present disclosure include reducing or eliminating gaps between support pins and substrates; reducing or eliminating gaps between support pins and a support surface of a pedestal; uniform deposition of materials onto substrates; reduced or eliminated probability of mura occurring on substrates; reducing or eliminating capacitance in gaps; reducing or eliminating arcing; reducing or eliminating the probability damage to substrates; increased throughput; and lower operational costs.
[0047] Aspects of the present disclosure include one or more springs in contact with one or more support pins; one or more springs disposed between a head portion of one of one or more support pins and a shoulder of a pedestal; one or more springs disposed adjacent to a bottom surface of a chamber body and in contact with a shaft portion of one of one or more support pins; one or more springs having a spring constant of less than 200 N/m; and one or more springs that position one or more support pins within a gap of less than about 5 Mil from a support surface of a pedestal. It is contemplated that one or more of these aspects disclosed herein may be combined. Moreover, it is contemplated that one or more of these aspects may include some or all of the aforementioned benefits.
[0048] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof. The present disclosure also contemplates that one or more aspects of the embodiments described herein may be substituted in for one or more of the other aspects described. The scope of the disclosure is determined by the claims that follow.

Claims

What is claimed is:
1. A substrate processing chamber, comprising:
a chamber body;
a pedestal disposed in the chamber body, the pedestal comprising:
a support surface to support a substrate thereon; and
one or more openings formed in the pedestal, each of the one or more openings defining a shoulder;
one or more support pins disposed in the one or more openings of the pedestal, each of the one or more support pins being disposed in one of the one or more openings of the pedestal and movable relative to the support surface of the pedestal; and
one or more mechanical springs in contact with the one or more support pins to apply a biasing force to the one or more support pins to bias each one of the one or more support pins relative to the support surface of the pedestal and in a direction towards the support surface of the pedestal and away from the respective shoulder.
2. The substrate processing chamber of claim 1 , wherein at least one of the one or more mechanical springs has a spring constant of less than 200 N/m.
3. The substrate processing chamber of claim 1 , wherein at least one of the one or more openings and at least one of the one or more support pins disposed therein are disposed at a center of the pedestal.
4. The substrate processing chamber of claim 1 , wherein the one or more mechanical springs comprise one or more of a wave spring washer, a die spring, a mechanical wire spring, or a flat spring.
5. The substrate processing chamber of claim 1 , wherein the one or more mechanical springs are in contact with the one or more support pins to apply a biasing force to position the one or more support pins such that an upper surface of each of the one or more support pins is coplanar with or above the support surface of the pedestal.
6. The substrate processing chamber of claim 1 , wherein the one or more mechanical springs are in contact with the one or more support pins to apply a biasing force to position the one or more support pins within a gap of less than 5 Mil from the support surface of the pedestal.
7. A substrate processing chamber, comprising:
a chamber body;
a pedestal disposed in the chamber body, the pedestal comprising:
a support surface to support a substrate thereon; and
one or more openings formed in the pedestal, each of the one or more openings including a first portion defining a first inner surface of the pedestal, a second portion below the first portion defining a second inner surface of the pedestal, and a shoulder between the first inner surface and the second inner surface, the second portion being narrower than the first portion;
one or more support pins disposed in the one or more openings of the pedestal, each of the one or more support pins being disposed in one of the one or more openings of the pedestal and including a head portion and a shaft portion, the head portion having a diameter wider than the second portion of the respective one of the one or more openings; and
one or more mechanical springs in contact with the one or more support pins, each of the one or more mechanical springs being disposed between the head portion of the respective one of the one or more support pins and the respective shoulder of the pedestal.
8. The substrate processing chamber of claim 7, wherein an upper end of each of the one or more mechanical springs is in contact with a lower surface of the head portion of the respective one of the one or more support pins, and a lower end of each of the one or more springs is in contact with the respective shoulder of the pedestal.
9. The substrate processing chamber of claim 8, wherein at least one of the one or more mechanical springs has a spring constant of less than 200 N/m.
10. The substrate processing chamber of claim 8, wherein the one or more support pins are movable relative to the support surface of the pedestal, and each of the one or more mechanical springs are in contact with the head portion of the respective one of the one or more support pins to apply a biasing force to the head portion of the respective one of the one or more support pins to position an upper surface of the head portion to be coplanar with or above the support surface of the pedestal.
11. The substrate processing chamber of claim 10, wherein the one or more mechanical springs are in contact with the one or more support pins to apply a biasing force to position the one or more support pins within a gap of less than 5 Mil from the support surface of the pedestal.
12. A substrate processing chamber, comprising:
a chamber body having a bottom surface;
a pedestal disposed in the chamber body, the pedestal comprising:
a support surface to support a substrate thereon; and
one or more openings formed in the pedestal, each of the one or more openings including a first portion defining a first inner surface of the pedestal, a second portion below the first portion defining a second inner surface of the pedestal, and a shoulder between the first inner surface and the second inner surface, the second portion being narrower than the first portion;
one or more support pins disposed in the one or more openings of the pedestal, each of the one or more support pins being disposed in one of the one or more openings of the pedestal and including a head portion and a shaft portion, the head portion having a diameter wider than the second portion of the respective one of the one or more openings; and
one or more mechanical springs disposed adjacent to the bottom surface of the chamber body and in contact with the shaft portion of the respective one of the one or more support pins.
13. The substrate processing chamber of claim 12, wherein an upper end of each of the one or more mechanical springs is in contact with a lower portion of the shaft portion of the respective one of the one or more support pins, and a lower end of each of the one or more mechanical springs is in contact with a respective one of one or more base structures disposed on the bottom surface of the chamber body.
14. The substrate processing chamber of claim 13, wherein at least one of the one or more mechanical springs has a spring constant of less than 200 N/m.
15. The substrate processing chamber of claim 13, wherein the one or more support pins are movable relative to the support surface of the pedestal, and each of the one or more mechanical springs is in contact with the shaft portion of the respective one of the one or more support pins to apply a biasing force to the shaft portion of the respective one of the one or more support pins to bias each one of the one or more support pins relative to the support surface of the pedestal and in a direction towards the support surface of the pedestal and away from the respective shoulder.
PCT/US2019/029734 2019-04-29 2019-04-29 Support pin apparatus for substrate processing chambers WO2020222771A1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112813419A (en) * 2020-12-24 2021-05-18 北京北方华创微电子装备有限公司 Process chamber of semiconductor process equipment and semiconductor process equipment
CN113241312A (en) * 2021-04-30 2021-08-10 北京北方华创微电子装备有限公司 Process chamber of semiconductor process equipment and semiconductor process equipment
CN115206868A (en) * 2022-09-19 2022-10-18 拓荆科技(上海)有限公司 Wafer supporting assembly and wafer processing device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0913172A (en) * 1995-06-28 1997-01-14 Ulvac Japan Ltd Lifting mechanism for vacuum device
JP2000243816A (en) * 1999-02-22 2000-09-08 Hitachi Electronics Eng Co Ltd Substrate chucking device
KR20110045327A (en) * 2009-10-26 2011-05-04 주식회사 테스 Apparatus for processing a substrate
US20140216332A1 (en) * 2011-10-13 2014-08-07 Ulvac, Inc. Vacuum treatment device
US20190109036A1 (en) * 2014-10-03 2019-04-11 Applied Materials, Inc. Spring-Loaded Pins For Susceptor Assembly And Processing Methods Using Same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0913172A (en) * 1995-06-28 1997-01-14 Ulvac Japan Ltd Lifting mechanism for vacuum device
JP2000243816A (en) * 1999-02-22 2000-09-08 Hitachi Electronics Eng Co Ltd Substrate chucking device
KR20110045327A (en) * 2009-10-26 2011-05-04 주식회사 테스 Apparatus for processing a substrate
US20140216332A1 (en) * 2011-10-13 2014-08-07 Ulvac, Inc. Vacuum treatment device
US20190109036A1 (en) * 2014-10-03 2019-04-11 Applied Materials, Inc. Spring-Loaded Pins For Susceptor Assembly And Processing Methods Using Same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112813419A (en) * 2020-12-24 2021-05-18 北京北方华创微电子装备有限公司 Process chamber of semiconductor process equipment and semiconductor process equipment
CN113241312A (en) * 2021-04-30 2021-08-10 北京北方华创微电子装备有限公司 Process chamber of semiconductor process equipment and semiconductor process equipment
CN115206868A (en) * 2022-09-19 2022-10-18 拓荆科技(上海)有限公司 Wafer supporting assembly and wafer processing device

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