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WO2020252020A1 - Sealant coating for plasma processing chamber components - Google Patents

Sealant coating for plasma processing chamber components Download PDF

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Publication number
WO2020252020A1
WO2020252020A1 PCT/US2020/036995 US2020036995W WO2020252020A1 WO 2020252020 A1 WO2020252020 A1 WO 2020252020A1 US 2020036995 W US2020036995 W US 2020036995W WO 2020252020 A1 WO2020252020 A1 WO 2020252020A1
Authority
WO
WIPO (PCT)
Prior art keywords
sealant
recited
coating
metal containing
plasma processing
Prior art date
Application number
PCT/US2020/036995
Other languages
French (fr)
Inventor
Benjamin Philip HEINE
Darrell EHRLICH
Robin Koshy
Slobodan Mitrovic
John Daugherty
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to CN202080043397.6A priority Critical patent/CN113966544A/en
Priority to JP2021573368A priority patent/JP7645819B2/en
Priority to US17/617,271 priority patent/US20220246404A1/en
Priority to KR1020227000873A priority patent/KR20220018053A/en
Publication of WO2020252020A1 publication Critical patent/WO2020252020A1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/142—Pretreatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/14—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to metal, e.g. car bodies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2504/00—Epoxy polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2506/00—Halogenated polymers
    • B05D2506/10—Fluorinated polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2518/00—Other type of polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms

Definitions

  • the present disclosure relates to the manufacturing of semiconductor devices. More specifically, the disclosure relates to plasma chamber components used in manufacturing semiconductor devices.
  • plasma processing chambers are used to process semiconductor devices. Components of plasma processing chambers are subjected to plasmas, which may degrade the component.
  • a component for use in a plasma processing chamber is provided.
  • a metal containing component body is provided.
  • a sealant coating is over a surface of the metal containing component body, wherein the sealant coating comprises at least one of a silicone sealant, an organic sealant, or epoxy sealant, wherein the sealant coating is not covered and directly exposed to plasma in the plasma processing chamber.
  • a method for forming a component of a plasma processing chamber is provided.
  • a metal containing component body is provided.
  • a sealant is applied over a surface of the metal containing component body.
  • FIG. 1 is a high level flow chart of an embodiment.
  • FIGS. 2A-C are schematic views of part of a component processed according to an embodiment.
  • FIG. 3 is a schematic view of an plasma reactor that may be used in an embodiment.
  • Materials that provide resistance to arcing are typically a metal oxide.
  • Metal oxide is typically brittle, subject to cracking, and has relatively low coefficients of thermal expansion (CTE). Any crack induced through cycling across a wide range of temperatures will lead to electrical breakdown, causing the part to fail.
  • CTE coefficients of thermal expansion
  • FIG. 1 is a high level flow chart of a process used in an embodiment.
  • a metal containing component body is provided (step 104).
  • FIG. 2A is a schematic cross-sectional view of part of a metal containing component body 204 of a component 200.
  • the component 200 is an electrostatic chuck (ESC).
  • the metal containing component body 204 is aluminum.
  • the component body 204 has a surface 206.
  • the surface 206 is a plasma facing surface, or a surface exposed to radicals formed by a plasma, or a surface exposed to electrostatic charges during plasma processing.
  • FIG. 2B is a schematic cross-sectional view of the metal containing component body 204 after a ceramic coating 208 has been deposited on the surface 206 of the metal containing component body 204.
  • the ceramic coating 208 is alumina deposited by plasma spraying.
  • the plasma spraying causes the ceramic coating 208 to have pores 210.
  • Plasma spraying is a type of thermal spraying in which a torch is formed by applying an electrical potential between two electrodes, leading to ionization of an accelerated gas (a plasma). Torches of this type can readily reach temperatures of thousands of degrees Celsius, liquefying high melting point materials such as ceramics. Particles of the desired material are injected into the jet, melted, and then accelerated towards the substrate so that the molten or plasticized material coats the surface of the component and cool, forming a solid, conformal coating.
  • a plasma accelerated gas
  • the thickness of the ceramic coating 208 is between 30 mht to 750 mht. In other embodiments, the ceramic coating 208 has a thickness of between 300 mht to 600 mht. In other embodiments, the ceramic coating 208 is a plasma electrolytic oxidation ceramic coating that has a thickness of between 30 mht to 200 mht.
  • An example of a recipe for plasma spraying the ceramic coating 208 is as follows. A carrier gas is pushed through an arc cavity and out through a nozzle.
  • a cathode and anode comprise parts of the arc cavity.
  • the cathode and anode are maintained at a large DC bias voltage, until the carrier gas begins to ionize, forming the plasma.
  • the hot, ionized gas is then pushed out through the nozzle forming the torch.
  • Into the chamber near the nozzle is injected fluidized ceramic particles, tens of micrometers in size. These particles are heated by the hot, ionized gas in the plasma torch such that they exceed the melting temperature of the ceramic.
  • the jet of plasma and melted ceramic is then aimed at a substrate. The particles impact the substrate, flattening and cooling to form a ceramic coating.
  • a sealant coating is formed on the ceramic coating 208 (step 112).
  • the sealant is Loctite® PC 7319TM also known as Loctite® Nordbak® Chemical Resistant CoatingTM manufactured by Henkel Corporation of Westlake Ohio.
  • Loctite PC 7319 is an epoxy. It has been found that Loctite PC 7319 provides a breakdown voltage of greater than 2000 volts.
  • the sealant is an organic sealant comprising at least one of a fluorinated polymer, perfluorinated polymer, silicone, epoxy sealant, or Parylene.
  • the sealant may be applied by brush painting, spray painting, or dipping. In this embodiment, the sealant is applied by impregnation.
  • the sealant is poured, soaked, or rubbed on the ceramic coating 208 to allow the sealant to soak into pores 210 of the ceramic coating 208.
  • the sealant is then hardened (step 116).
  • the hardening of the sealant may be accomplished by drying, heating, or polymerizing the sealant to form the sealant coating.
  • FIG. 2C is a schematic cross-sectional view of the metal containing component body 204 after the sealant coating 212 is formed on the ceramic coating 208 over a surface of the metal containing component body 204.
  • the sealant fills the pores but does not form a continuous surface over the ceramic coating 208.
  • a top surface layer with a thickness of less than 50 microns is formed.
  • the component is mounted in a plasma processing chamber (step 120).
  • the plasma processing chamber is used to process a substrate (step 124), where a plasma is created within the chamber to process the substrate, such as etching the substrate, and the unprotected sealant coating 212 is exposed to the plasma.
  • FIG. 3 is a schematic view of a plasma processing chamber 300 in which the component has been mounted.
  • the plasma processing chamber 300 comprises confinement rings 302, an upper electrode 304, a lower electrode 308 in the form of an electrostatic chuck (ESC), a gas source 310, a liner 362, and an exhaust pump 320.
  • the component is the ESC.
  • a wafer 366 is positioned upon the lower electrode 308.
  • the lower electrode 308 incorporates a suitable substrate chucking mechanism (e.g., electrostatic, mechanical clamping, or the like) for holding the wafer 366.
  • the reactor top 328 incorporates the upper electrode 304 disposed immediately opposite the lower electrode 308.
  • the upper electrode 304, lower electrode 308, and confinement rings 302 define the confined plasma volume 340.
  • Gas is supplied to the confined plasma volume 340 through a gas inlet
  • the exhaust pump 320 helps to regulate pressure.
  • a radio frequency (RF) source 348 is electrically connected to the lower electrode 308.
  • Chamber walls 352 surround the liner 362, confinement rings 302, the upper electrode 304, and the lower electrode 308.
  • the liner 362 helps prevent gas or plasma that passes through the confinement rings 302 from contacting the chamber walls 352.
  • Different combinations of connecting RF power to the electrode are possible.
  • the 27 MHz, 60 MHz, and 2 MHz power sources make up the RF source 348 connected to the lower electrode 308, and the upper electrode 304 is grounded.
  • a controller 335 is controllably connected to the RF source 348, exhaust pump 320, and the gas source 310.
  • the plasma processing chamber 300 may be a CCP (capacitively coupled plasma) reactor or an ICP
  • inductively coupled plasma reactor may use other sources like surface wave, microwave, or electron cyclotron resonance (ECR) may be used.
  • ECR electron cyclotron resonance
  • the resulting coating is resistant to chemical degradation and arcing.
  • plasma processing chambers with such components will have fewer defects, while decreasing failure rates of such systems and increasing the time between the replacements of various parts.
  • the sealant may be an organic coating comprising at least one of a fluorinated polymer, perfluorinated polymer, silicone, epoxy, or Parylene.
  • the sealant is Xylan® 1620 manufactured by Micro Surface Corporation of Morris, Illinois. Xylan 1620 provides a fluoropolymer coating with a coefficient of friction as low as 0.02.
  • the sealant is a PCT S-Sealer previously manufactured by Protective Coating Technology of Haifa Bay Israel.
  • PCT S-Sealer is an organo-ceramic self-planarized sealer.
  • PCT S-Sealer has a coefficient of friction of 0.12.
  • the sealant is dichtol WF 49 manufactured by Diamant of Germany. It has been found that dichtol WF 49 provides a breakdown voltage of greater than 2000 volts.
  • the sealant is Parylene. Parylene is formed from a poly(p- xylylene) polymer. The Parylene is deposited using a thermal process, where the gas is decomposed and then condensed on the ceramic coating 208. In various embodiments, the sealant may be used in a temperature range between about -60° C to 300° C.
  • the component may be other parts of a plasma processing chamber, such as confinement rings, edge rings, ground rings, chamber liners, door liners, or other components.
  • the plasma processing chamber may be a dielectric processing chamber or conductor processing chamber.
  • one or more, but not all surfaces are coated.
  • the plasma processing chamber may be used for etching, deposition, or other substrate processes.
  • a substrate support was provided by an ESC, in other embodiments the coating may be used on other substrate supports such as a pedistal or a substrate support without electrostatic chucking.
  • the sealant coating 212 is deposited directly on the metal containing component body 204 without a ceramic coating 208.
  • the metal containing component body 204 may be aluminum or an aluminium matrix with silicon carbide particles (AlSiC).
  • the aluminum component body 204 includes aluminum based alloys such as Aluminum 6061.
  • the metal containing component body 204 may further comprise fillers, such as fillers of boron carbide or boron nitride.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

A component for use in a plasma processing chamber is provided. A metal containing component body is provided. A sealant coating is over a surface of the metal containing component body, wherein the sealant coating comprises at least one of a silicone sealant, an organic sealant, or epoxy sealant, wherein the sealant coating is not covered and directly exposed to plasma in the plasma processing chamber.

Description

SEALANT COATING FOR PLASMA PROCESSING CHAMBER
COMPONENTS
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the benefit of priority of U.S. Application No.
62/860,540, filed June 12, 2019, which is incorporated herein by reference for all purposes.
BACKGROUND
[0002] The present disclosure relates to the manufacturing of semiconductor devices. More specifically, the disclosure relates to plasma chamber components used in manufacturing semiconductor devices.
[0003] During semiconductor wafer processing, plasma processing chambers are used to process semiconductor devices. Components of plasma processing chambers are subjected to plasmas, which may degrade the component.
SUMMARY
[0004] To achieve the foregoing and in accordance with the purpose of the present disclosure, a component for use in a plasma processing chamber is provided.
A metal containing component body is provided. A sealant coating is over a surface of the metal containing component body, wherein the sealant coating comprises at least one of a silicone sealant, an organic sealant, or epoxy sealant, wherein the sealant coating is not covered and directly exposed to plasma in the plasma processing chamber.
[0005] In another manifestation, a method for forming a component of a plasma processing chamber is provided. A metal containing component body is provided. A sealant is applied over a surface of the metal containing component body.
[0006] These and other features of the present disclosure will be described in more detail below in the detailed description of the disclosure and in conjunction with the following figures.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which:
[0008] FIG. 1 is a high level flow chart of an embodiment. [0009] FIGS. 2A-C are schematic views of part of a component processed according to an embodiment.
[0010] FIG. 3 is a schematic view of an plasma reactor that may be used in an embodiment.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0011] The present disclosure will now be described in detail with reference to a few preferred embodiments thereof as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. It will be apparent, however, to one skilled in the art, that the present disclosure may be practiced without some or all of these specific details. In other instances, well-known process steps and/or structures have not been described in detail in order to not unnecessarily obscure the present disclosure.
[0012] Materials that provide resistance to arcing are typically a metal oxide.
Metal oxide is typically brittle, subject to cracking, and has relatively low coefficients of thermal expansion (CTE). Any crack induced through cycling across a wide range of temperatures will lead to electrical breakdown, causing the part to fail.
[0013] Current protective coatings on electrostatic chuck (ESC) baseplates include anodization, ceramic spray coat, or a spray coat on top of anodization. An aluminum nitride coating grown directly on the surface of aluminum baseplates is used in some products. Data show that anodization breaks down at approximately 2 kilovolts (kV) on a 0.002 inch thick coating when on a flat surface of aluminum, and at 600 volts (V) on corner radii. Spray coating, if applied normal to the surface, will withstand up to 10 kV on flat surfaces, but only about 4-5 kV on comer radii. Existing technology reaches its limits at these values since attempts to further improve the breakdown by making thicker coatings lead to cracking in response to thermal cycling, due to a mismatch between the CTE of the substrate and the CTE of coating materials.
[0014] The metal parts of an ESC can be subjected to large voltages as compared to the chamber body. Hence, it would be desirable to protect the metal parts of ESCs from chemical degradation and electrical discharge. [0015] To facilitate understanding, FIG. 1 is a high level flow chart of a process used in an embodiment. A metal containing component body is provided (step 104). FIG. 2A is a schematic cross-sectional view of part of a metal containing component body 204 of a component 200. In this example, the component 200 is an electrostatic chuck (ESC). In this embodiment, the metal containing component body 204 is aluminum. The component body 204 has a surface 206. In this embodiment, the surface 206 is a plasma facing surface, or a surface exposed to radicals formed by a plasma, or a surface exposed to electrostatic charges during plasma processing.
[0016] A ceramic coating is deposited on the surface 206 of the metal containing component body 204 (step 108). FIG. 2B is a schematic cross-sectional view of the metal containing component body 204 after a ceramic coating 208 has been deposited on the surface 206 of the metal containing component body 204. In this embodiment, the ceramic coating 208 is alumina deposited by plasma spraying. In this embodiment, the plasma spraying causes the ceramic coating 208 to have pores 210.
[0017] Plasma spraying is a type of thermal spraying in which a torch is formed by applying an electrical potential between two electrodes, leading to ionization of an accelerated gas (a plasma). Torches of this type can readily reach temperatures of thousands of degrees Celsius, liquefying high melting point materials such as ceramics. Particles of the desired material are injected into the jet, melted, and then accelerated towards the substrate so that the molten or plasticized material coats the surface of the component and cool, forming a solid, conformal coating.
Preferably, plasma spraying is used to deposit the ceramic coating 208. These processes are distinct from vapor deposition processes, which use vaporized material instead of molten material. In this embodiment, the thickness of the ceramic coating 208 is between 30 mht to 750 mht. In other embodiments, the ceramic coating 208 has a thickness of between 300 mht to 600 mht. In other embodiments, the ceramic coating 208 is a plasma electrolytic oxidation ceramic coating that has a thickness of between 30 mht to 200 mht. An example of a recipe for plasma spraying the ceramic coating 208 is as follows. A carrier gas is pushed through an arc cavity and out through a nozzle. In the cavity, a cathode and anode comprise parts of the arc cavity. The cathode and anode are maintained at a large DC bias voltage, until the carrier gas begins to ionize, forming the plasma. The hot, ionized gas is then pushed out through the nozzle forming the torch. Into the chamber near the nozzle is injected fluidized ceramic particles, tens of micrometers in size. These particles are heated by the hot, ionized gas in the plasma torch such that they exceed the melting temperature of the ceramic. The jet of plasma and melted ceramic is then aimed at a substrate. The particles impact the substrate, flattening and cooling to form a ceramic coating.
[0018] A sealant coating is formed on the ceramic coating 208 (step 112). In this example, the sealant is Loctite® PC 7319™ also known as Loctite® Nordbak® Chemical Resistant Coating™ manufactured by Henkel Corporation of Westlake Ohio. Loctite PC 7319 is an epoxy. It has been found that Loctite PC 7319 provides a breakdown voltage of greater than 2000 volts. Generally, the sealant is an organic sealant comprising at least one of a fluorinated polymer, perfluorinated polymer, silicone, epoxy sealant, or Parylene. The sealant may be applied by brush painting, spray painting, or dipping. In this embodiment, the sealant is applied by impregnation. The sealant is poured, soaked, or rubbed on the ceramic coating 208 to allow the sealant to soak into pores 210 of the ceramic coating 208. The sealant is then hardened (step 116). The hardening of the sealant may be accomplished by drying, heating, or polymerizing the sealant to form the sealant coating.
[0019] FIG. 2C is a schematic cross-sectional view of the metal containing component body 204 after the sealant coating 212 is formed on the ceramic coating 208 over a surface of the metal containing component body 204. In this embodiment, the sealant fills the pores but does not form a continuous surface over the ceramic coating 208. In some embodiments, a top surface layer with a thickness of less than 50 microns is formed.
[0020] The component is mounted in a plasma processing chamber (step 120).
The plasma processing chamber is used to process a substrate (step 124), where a plasma is created within the chamber to process the substrate, such as etching the substrate, and the unprotected sealant coating 212 is exposed to the plasma.
[0021] FIG. 3 is a schematic view of a plasma processing chamber 300 in which the component has been mounted. The plasma processing chamber 300 comprises confinement rings 302, an upper electrode 304, a lower electrode 308 in the form of an electrostatic chuck (ESC), a gas source 310, a liner 362, and an exhaust pump 320. In this example, the component is the ESC. Within plasma processing chamber 300, a wafer 366 is positioned upon the lower electrode 308. The lower electrode 308 incorporates a suitable substrate chucking mechanism (e.g., electrostatic, mechanical clamping, or the like) for holding the wafer 366. The reactor top 328 incorporates the upper electrode 304 disposed immediately opposite the lower electrode 308. The upper electrode 304, lower electrode 308, and confinement rings 302 define the confined plasma volume 340.
[0022] Gas is supplied to the confined plasma volume 340 through a gas inlet
343 by the gas source 310 and is exhausted from the confined plasma volume 340 through the confinement rings 302 and an exhaust port by the exhaust pump 320. Besides helping to exhaust the gas, the exhaust pump 320 helps to regulate pressure.
A radio frequency (RF) source 348 is electrically connected to the lower electrode 308.
[0023] Chamber walls 352 surround the liner 362, confinement rings 302, the upper electrode 304, and the lower electrode 308. The liner 362 helps prevent gas or plasma that passes through the confinement rings 302 from contacting the chamber walls 352. Different combinations of connecting RF power to the electrode are possible. In a preferred embodiment, the 27 MHz, 60 MHz, and 2 MHz power sources make up the RF source 348 connected to the lower electrode 308, and the upper electrode 304 is grounded. A controller 335 is controllably connected to the RF source 348, exhaust pump 320, and the gas source 310. The plasma processing chamber 300 may be a CCP (capacitively coupled plasma) reactor or an ICP
(inductively coupled plasma) reactor, or may use other sources like surface wave, microwave, or electron cyclotron resonance (ECR) may be used.
[0024] The resulting coating is resistant to chemical degradation and arcing.
As a result, plasma processing chambers with such components will have fewer defects, while decreasing failure rates of such systems and increasing the time between the replacements of various parts.
[0025] In other embodiments, the sealant may be an organic coating comprising at least one of a fluorinated polymer, perfluorinated polymer, silicone, epoxy, or Parylene. In an embodiment, the sealant is Xylan® 1620 manufactured by Micro Surface Corporation of Morris, Illinois. Xylan 1620 provides a fluoropolymer coating with a coefficient of friction as low as 0.02. In another embodiment, the sealant is a PCT S-Sealer previously manufactured by Protective Coating Technology of Haifa Bay Israel. PCT S-Sealer is an organo-ceramic self-planarized sealer. PCT S-Sealer has a coefficient of friction of 0.12. It has been found that PCT S-Sealer provides a breakdown voltage of greater than 5000 volts. In another embodiment, the sealant is dichtol WF 49 manufactured by Diamant of Germany. It has been found that dichtol WF 49 provides a breakdown voltage of greater than 2000 volts. In another embodiment, the sealant is Parylene. Parylene is formed from a poly(p- xylylene) polymer. The Parylene is deposited using a thermal process, where the gas is decomposed and then condensed on the ceramic coating 208. In various embodiments, the sealant may be used in a temperature range between about -60° C to 300° C.
[0026] In various embodiments, the component may be other parts of a plasma processing chamber, such as confinement rings, edge rings, ground rings, chamber liners, door liners, or other components. The plasma processing chamber may be a dielectric processing chamber or conductor processing chamber. In some
embodiments one or more, but not all surfaces are coated. The plasma processing chamber may be used for etching, deposition, or other substrate processes. Although in the above embodiment, a substrate support was provided by an ESC, in other embodiments the coating may be used on other substrate supports such as a pedistal or a substrate support without electrostatic chucking.
[0027] In other embodiments, the sealant coating 212 is deposited directly on the metal containing component body 204 without a ceramic coating 208. In various embodiments, the metal containing component body 204 may be aluminum or an aluminium matrix with silicon carbide particles (AlSiC). The aluminum component body 204 includes aluminum based alloys such as Aluminum 6061. The metal containing component body 204 may further comprise fillers, such as fillers of boron carbide or boron nitride.
[0028] While this disclosure has been described in terms of several preferred embodiments, there are alterations, permutations, modifications, and various substitute equivalents, which fall within the scope of this disclosure. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present disclosure. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations, and various substitute equivalents as fall within the true spirit and scope of the present disclosure.

Claims

CLAIMS What is claimed is:
1. A component for use in a plasma processing chamber, comprising:
a metal containing component body; and
a sealant coating over a surface of the metal containing component body, wherein the sealant coating comprises at least one of a silicone based sealant, an organic sealant, or epoxy sealant, wherein the sealant coating is not covered and directly exposed to plasma in the plasma processing chamber.
2. The component, as recited in claim 1, wherein the sealant coating is an organic coating of at least one of a fluorinated polymer, perfluorinated polymer, silicone, epoxy, or poly(p-xylylene) polymer.
3. The component, as recited in claim 1, wherein the sealant coating is at least one of Parylene, PCT S-Sealer, Loctite PC 7319, Xylan 2630, and dichtol WF 49.
4. The component, as recited in claim 1, wherein the metal containing component body forms substrate support.
5. The component, as recited in claim 1, further comprising a ceramic coating on a surface of the metal containing component body, wherein the sealant coating is impregnated into the ceramic coating.
6. The component, as recited in claim 5, wherein the sealant coating is an organic coating of at least one of a fluorinated polymer, perfluorinated polymer, or poly(p- xylylene) polymer.
7. The component, as recited in claim 5, wherein the sealant coating is at least one of Parylene, PCT S-Sealer, Loctite PC 7319, Xylan 2630, and dichtol WF 49.
8. The component, as recited in claim 5, wherein the metal containing component body forms a substrate support.
9. A method for forming a component of a plasma processing chamber, comprising:
providing a metal containing component body; and
applying a sealant over a surface of the metal containing component body.
10. The method, as recited in claim 9, wherein the sealant is at least one of Parylene, PCT S-Sealer, Loctite PC 7319, Xylan 2630, and dichtol WF 49.
11. The method, as recited in claim 9, wherein the sealant is Parylene, wherein the applying the Parylene comprises:
vaporizing the Parylene; and
condensing the Parylene on the metal containing component body.
12. The method, as recited in claim 9, wherein the sealant is an organic sealant of at least one of a fluorinated polymer, perfluorinated polymer, silicone, epoxy, or poly(p-xylylene) polymer.
13. The method, as recited in claim 9, further comprising:
placing the metal containing component body in a plasma processing chamber; and
plasma processing a substrate in the plasma processing chamber, wherein the sealant is exposed to a plasma durint the plasma processing.
14. The method, as recited in claim 9, wherein the metal containing component body forms a substrate support.
15. The method, as recited in claim 9, further comprising a depositing a ceramic coating on a surface of the metal containing component body, wherein the sealant is impregnated into the ceramic coating.
16. The method, as recited in claim 15, wherein the sealant is at least one of a fluorinated polymer, perfluorinated polymer, or poly(p-xylylene) polymer.
17. The method, as recited in claim 15, wherein the sealant is at least one of Parylene, PCT S-Sealer, Loctite PC 7319, Xylan 2630, and dichtol WF 49.
18. The method, as recited in claim 15, wherein the metal containing component body forms a substrate support.
19. The method, as recited in claim 9, further comprising hardening the sealant.
PCT/US2020/036995 2019-06-12 2020-06-10 Sealant coating for plasma processing chamber components WO2020252020A1 (en)

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CN202080043397.6A CN113966544A (en) 2019-06-12 2020-06-10 Sealant coating for plasma processing chamber components
JP2021573368A JP7645819B2 (en) 2019-06-12 2020-06-10 Sealant coating for plasma processing chamber components - Patents.com
US17/617,271 US20220246404A1 (en) 2019-06-12 2020-06-10 Sealant coating for plasma processing chamber components
KR1020227000873A KR20220018053A (en) 2019-06-12 2020-06-10 Sealant Coatings for Plasma Processing Chamber Components

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US201962860540P 2019-06-12 2019-06-12
US62/860,540 2019-06-12

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US20220246404A1 (en) 2022-08-04

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