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WO2020138209A1 - Wiring base, electronic component housing package, and electronic device - Google Patents

Wiring base, electronic component housing package, and electronic device Download PDF

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Publication number
WO2020138209A1
WO2020138209A1 PCT/JP2019/050927 JP2019050927W WO2020138209A1 WO 2020138209 A1 WO2020138209 A1 WO 2020138209A1 JP 2019050927 W JP2019050927 W JP 2019050927W WO 2020138209 A1 WO2020138209 A1 WO 2020138209A1
Authority
WO
WIPO (PCT)
Prior art keywords
recess
wiring substrate
conductor
base
terminal
Prior art date
Application number
PCT/JP2019/050927
Other languages
French (fr)
Japanese (ja)
Inventor
茂典 高谷
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to JP2020563366A priority Critical patent/JP7027578B2/en
Priority to KR1020217003182A priority patent/KR102463392B1/en
Priority to CN201980055421.5A priority patent/CN112585743B/en
Publication of WO2020138209A1 publication Critical patent/WO2020138209A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/13Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for
    • H05K1/0216Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane

Definitions

  • the present disclosure relates to a wiring substrate, a package for storing electronic components, and an electronic device.
  • Patent Document 1 describes that an electronic device is composed of a wiring substrate and electronic components such as an LD (Laser Diode) or a PD (Photo Diode).
  • LD Laser Diode
  • PD Photo Diode
  • a wiring substrate includes a substrate and at least one terminal.
  • the base body has a first concave portion that is open on the upper surface.
  • At least one terminal extends from the first end toward the second end and is located in the first recess.
  • the terminal has a first end located inside the first recess and a second end located outside the first recess, and has a diameter-expanded portion inside the first recess.
  • An electronic component storage package includes a wiring base and a frame.
  • the frame portion is located on the lower surface opposite to the upper surface of the base body.
  • An electronic device includes an electronic component and an external board.
  • the electronic component is mounted on the lower surface of the base.
  • the external substrate has a through hole corresponding to the terminal.
  • FIG. 3 is a top perspective view of a wiring substrate according to an embodiment of the present disclosure.
  • FIG. 3 is a top perspective view of a wiring substrate according to an embodiment of the present disclosure.
  • FIG. 3 is a top perspective view of an electronic component storage package according to an embodiment of the present disclosure.
  • FIG. 3 is a top perspective view of an electronic component storage package according to an embodiment of the present disclosure.
  • FIG. 3 is a bottom perspective view of an electronic component storage package according to an embodiment of the present disclosure.
  • FIG. 3 is a side view of the electronic component storage package according to the embodiment of the present disclosure.
  • FIG. 3 is a top perspective view in which a wiring base and an external substrate according to an embodiment of the present disclosure are connected.
  • FIG. 3 is a top perspective view in which an electronic component storing package and an external substrate according to an embodiment of the present disclosure are connected.
  • FIG. 6 is a top perspective view of an external substrate connected to the electronic component storage package according to the embodiment of the present disclosure.
  • the wiring substrate 1 according to an embodiment of the present disclosure will be described below with reference to the drawings.
  • the electronic device 100 includes an electronic component storage package 10.
  • the electronic component storage package 10 includes a wiring substrate 1.
  • the wiring base 1 includes a base 2 and terminals 4.
  • the wiring base 1 is configured by arranging the first recess 21, the first signal conductor 3, the terminal 4, and the like on the upper surface of the base 2.
  • the base body 2 may have, for example, a circular shape when viewed from above.
  • the radius may be 0.5 mm to 5 mm and the height may be 1 mm to 10 mm.
  • the circular shape may include a shape in which a part of a circle is cut off when viewed from above.
  • the base body 2 may have a rectangular shape when viewed from above.
  • the size may be 1 mm ⁇ 1 mm to 10 mm ⁇ 10 mm.
  • the base body 2 may be made of a dielectric material. Also.
  • the base 2 may be formed by stacking dielectric materials. In addition, in this specification, a laminate of dielectric materials may be referred to as an insulating layer.
  • the dielectric material includes, for example, a ceramic material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body or a silicon nitride sintered body, or a glass ceramic material. Etc. can be used.
  • the first recess 21 is located on the upper surface of the base 2.
  • the first recess 21 is open on the upper surface.
  • the first recess 21 may be formed by forming a recess from the upper surface of the base body 2 toward the lower surface opposite to the upper surface by cutting a molded body or drilling a fired body. Further, when the base body 2 is formed by stacking the dielectric material, even if the first concave portion 21 is formed by cutting out a part of a plurality of dielectrics at the place where the first concave portion 21 is located and stacking them. Good.
  • the shape of the first recess 21 may be, for example, circular when viewed from above.
  • the size of the radius may be 0.1 mm to 1 mm.
  • the first recess 21 may have a rectangular shape or an elliptical shape in which the corners of the rectangular shape are curved when viewed from above.
  • the size may be 0.2 mm ⁇ 1 mm to 2 mm ⁇ 10 mm.
  • the radius of curvature of the curved portion may be 0.1 mm to 1 mm.
  • the first recess 21 may have, for example, a rectangular shape when viewed in a cross section in the direction from the upper surface to the lower surface.
  • the depth of the first recess 21 in the direction from the upper surface to the lower surface may be 0.1 mm to 3 mm.
  • the first recess 21 may have a taper shape, an inverse taper shape, or a step shape when viewed in a cross section in a direction from the upper surface to the lower surface.
  • the terminal 4 has a first end 41 and a second end 42.
  • the terminal 4 extends from the first end 41 toward the second end 42.
  • the terminal 4 may be rod-shaped.
  • the terminal 4 may be located so as to extend in the direction perpendicular to the upper surface of the base 2. Note that the term "vertical" in this specification includes not only the vertical direction but also a case where the vertical direction is slightly inclined due to manufacturing errors. The error may be in the range of -0.1° to +0.1°.
  • the terminal 4 has a first end 41 located inside the first recess 21 and a second end 42 located outside the first recess 21, as shown in FIG. 11 or 12.
  • the terminal 4 has an enlarged diameter portion 43 in the first recess 21.
  • a joining material such as a brazing material applied to the enlarged diameter portion 43 when the terminal 4 is joined in the first concave portion 21. Since the contact area with the wiring substrate 1 increases, the bonding strength between the external substrate 8 such as FPC (Flexible Printed Circuits) and the wiring substrate 1 increases.
  • the external substrate 8 and the wiring substrate 1 are connected, since the enlarged diameter portion 43 does not protrude from the opening of the first recess 21, the external substrate 8 does not float (float) from the wiring substrate 1. Excellent connection reliability.
  • the first recess 21 may be a brazing material reservoir of the brazing material not used for joining. Therefore, it becomes difficult for the brazing material to protrude onto the upper surface of the wiring substrate 1. As a result, it is possible to reduce the floating of the external substrate 8 from the wiring substrate 1 due to the brazing filler metal that has overflowed.
  • the diameter of a portion of the first recess 21 above the opening and close to the opening is used as a reference, and a portion having a diameter larger than that portion is defined as the enlarged diameter portion 43.
  • the expanded diameter portion 43 may extend from the first end 41 toward the opening of the first recess 21.
  • the expanded diameter portion 43 may include the first end 41.
  • the area of the diameter of the expanded diameter portion 43 may be the same as the area of the diameter of the first end 41.
  • the area of the diameter of the expanded diameter portion 43 is the area of the cross section orthogonal to the axis of the terminal 4.
  • the area of the diameter of the first end 41 is the surface area of the first end 41. Since the area of the diameter of the enlarged diameter portion 43 is the same as the area of the diameter of the first end 41, the joint strength with the connecting conductor 5 can be increased.
  • the diameter area of the expanded diameter portion 43 is S1
  • the diameter area of the first end 41 is S2.
  • the expanded diameter portion 43 may extend from between the first end 41 and the second portion 42 toward the opening of the first recess 21.
  • the expanded diameter portion 43 may not include the first end 41.
  • the area of the diameter of the expanded diameter portion 43 may be larger than the area of the diameter of the first end 41.
  • the length of the terminal 4 may be 1 mm to 10 mm.
  • the radius of the expanded diameter portion 43 may be 0.1 mm to 0.8 mm, and the radius other than the expanded diameter portion 43 is 0.05 mm to 0.5 mm. May be
  • the terminal 4 may be a metal including iron, for example.
  • the terminal 4 is electrically connected to an external power source and supplies electricity to the mounted electronic component 101.
  • a plurality of terminals 4 may be provided depending on the design of the wiring substrate 1. When there are a plurality of terminals 4, some terminals 4 may be electrically connected to each other, or each terminal 4 may not be electrically connected to each other.
  • the expanded diameter portion 43 may have a stepped shape when viewed in cross section including the axis of the terminal.
  • the step is located below the opening of the first recess 21 or in the lower surface direction than the opening. In other words, the expanded diameter portion 43 does not project upward from the opening. Since the expanded diameter portion 43 is step-shaped, it becomes easy to connect the external substrate 8 and the expanded diameter portion 43 of the first recess 21 with a brazing material or the like. As a result, the connection between the terminal 4 and the base 2 becomes more stable.
  • a plurality of terminals 4 are located in the first recess 21.
  • a plurality of first recesses 21 may be located on the upper surface of the base body 2, and a plurality of terminals 4 may be located in each of the plurality of first recesses 21.
  • the connecting conductor 5 is located in the first recess 21 and is connected to the first end 41.
  • the connection conductors 5 are located in the first recess 21 by the number of the plurality of terminals 4, and electrically correspond to each of the plurality of terminals 4 in a one-to-one correspondence.
  • An insulating layer may be located in a region where the terminal 4 and the connecting conductor 5 are not located.
  • the connection conductor 5 may be used, for example, to connect the base 2 and the terminal 4 with a bonding material such as a brazing material.
  • the connection conductor 5 may be located so as to surround the outer circumference of the expanded diameter portion 43 when viewed from above.
  • the terminal 4 can be easily joined to the connecting conductor 5, and at the time of joining the terminal 4 and the external substrate 8 with a brazing material, Since the brazing material that has flowed into the recess 21 can be received, it is possible to reduce the occurrence of a short circuit between the terminals 4.
  • the shape of the connecting conductor 5 may be, for example, rectangular or circular when viewed from above.
  • the size may be 0.2 mm ⁇ 0.2 mm to 2 mm ⁇ 2 mm.
  • the size of the radius may be 0.1 mm to 1 mm.
  • the connecting conductor 5 is made of, for example, a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese, and is co-fired in the form of a metallized layer or a plated layer on the surface of the uppermost insulating layer, or a metal. It may be plated.
  • one terminal 4 is located in the first recess 21.
  • the shape of the connection conductor 5 may correspond to the shape of the first recess 21. Since the shape of the connection conductor 5 corresponds to the shape of the first recess 21, the connection region between the base 2 and the terminal 4 can be widened, and as a result, the bonding strength between the terminal 4 and the connection conductor 5 can be increased. Can be raised.
  • the first signal conductor 3 is located on the upper surface of the base 2 and extends in the first direction.
  • the first signal conductor 3 is separated from the first recess 21 when viewed from above.
  • the shape of the first signal conductor 3 may be, for example, a rectangular shape when viewed from above. When the shape of the first signal conductor 3 in a top view is rectangular, the width may be 0.05 mm to 1 mm and the length may be 0.5 mm to 5 mm.
  • the first signal conductor 3 may include a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese.
  • the first signal conductor 3 may be co-fired or metal-plated on the upper surface of the substrate 2 in the form of a metallized layer, a plated layer, or the like. Further, the first signal conductor 3 may be located so as to extend in a substantially vertical direction with respect to the upper surface of the base 2. The first signal conductor 3 can be used to transmit a high frequency signal belonging to, for example, the 10 to 60 GHz band.
  • the first signal conductors 3 are a pair of first signal conductors 3 and may be positioned in parallel with each other. Since the pair of first signal conductors 3 are positioned in parallel, it is possible to reduce transmission loss when transmitting a high frequency signal.
  • a pair of first ground conductors 6 extending in the first direction and sandwiching at least a part of the first signal conductor 3 may be further provided.
  • the arrangement of the first signal conductor 3 and the first ground conductor 6 becomes a coplanar structure. Since the first signal conductor 3 and the first ground conductor 6 are arranged in a coplanar structure, a high frequency signal can be smoothly transmitted.
  • the first ground conductor 6 is made of, for example, a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese, and is co-fired on the surface of the uppermost insulating layer in the form of a metallized layer or a plated layer. Alternatively, it may be metal-plated.
  • the second ground conductor 61 may be located closer to the center of the upper surface than the first signal conductor 3 in a top view.
  • the second ground conductor 61 is connected to the pair of first ground conductors 6.
  • the second ground conductor 61 widens the area of the wiring substrate 1 that functions as a ground. As a result, the transmission of the high frequency signal becomes more stable.
  • the second ground conductor 61 is made of a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese, and is co-fired on the surface of the uppermost insulating layer in the form of a metallized layer or a plated layer. It may be metal-plated.
  • the first ground conductor 6 does not have to be located on the outer periphery of the base body 2 and beyond the first signal conductor 3 in a top view. Since the first ground conductor 6 is not located on the outer periphery of the base 2 and beyond the first signal conductor 3, the second signal conductor 82 and the first ground are connected when the external substrate 8 and the wiring base 1 are connected. Occurrence of a short circuit due to contact with the conductor 6 can be reduced.
  • the tip of the first signal conductor 3 and the outer periphery of the substrate 2 refer to the area A in FIGS. 1 to 4 of the drawings.
  • the first ground conductor 6 may be electrically connected to the ground conductor located inside the base 2 by the via 22. Since the first ground conductor 6 is connected to the ground conductor located inside the base 2 through the via 22, the region functioning as the ground can be widened.
  • the second ground conductor 61 may be electrically connected to the ground conductor located inside the base 2 by the via 22. By connecting the second ground conductor 61 to the ground conductor located inside the base 2 through the via 22, it is possible to widen the region functioning as the ground.
  • the base 2 may further have a second recess 7 located on the outer periphery of the base and beyond the first ground conductor.
  • the second concave portion 7 is formed from the upper surface to the side surface, and may be continuously opened on the upper surface and the side surface.
  • the base 2 may have a plurality of second recesses 7.
  • the second recess 7 may be formed by cutting the base 2 from the upper surface to the side surface by cutting or the like.
  • the second recess 7 is formed by cutting a part of a plurality of dielectrics at a position where the second recess 7 is located and stacking the dielectrics. It may be formed.
  • the second recess 7 may have, for example, a circular shape, a rectangular shape, or an elliptical shape when viewed from above.
  • the size of the radius may be 0.1 mm to 1 mm.
  • the size may be 0.2 mm ⁇ 0.2 mm to 2 mm ⁇ 10 mm.
  • the third ground conductor 71 may be located on the inner surface of the second recess 7.
  • the third ground conductor 71 may be electrically connected to a ground conductor located inside the base 2, for example. Since the third ground conductor 71 is electrically connected to the ground conductor located inside the base body 2, it is possible to widen the region functioning as the ground. As a result, the ground of the high frequency signal transmitted by the first signal conductor 3 is strengthened, and the high frequency characteristics can be improved.
  • the third ground conductor 71 is made of a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese, and is co-fired on the surface of the uppermost insulating layer in the form of a metallized layer or a plated layer. Alternatively, it may be metal-plated.
  • the third ground conductor 71 may be electrically connected to the first ground conductor 6 while being connected to the first ground conductor 6. As a result, the region functioning as the ground can be further widened.
  • the base body 2 has, for example, a plurality of insulating layers containing an aluminum oxide sintered body, it is manufactured as follows. First, a slurry is prepared by adding and mixing an appropriate organic binder, a solvent and the like to raw material powders such as aluminum oxide and silicon oxide. Next, the formed slurry is subjected to a forming method such as a doctor blade method and formed into a sheet shape to form a plurality of ceramic green sheets.
  • notches serving as the first recess 21 and the second recess 7 may be provided at predetermined positions of the ceramic green sheet. Then, a plurality of ceramic green sheets are laminated and pressure-bonded. Finally, the laminated ceramic green sheets are fired in a reducing atmosphere at a temperature of about 1600° C., and are cut or punched to have an appropriate shape to produce the base 2 having a desired shape.
  • the first signal conductor 3, the connection conductor 5, the first ground conductor 6, the second ground conductor 61, and the third ground conductor 71 are formed of, for example, a metallized layer containing a high melting point metal such as tungsten, molybdenum, or manganese.
  • a metal paste is prepared by kneading a high melting point metal powder together with an organic solvent and a binder. The metal paste is printed on a predetermined portion of the ceramic green sheet by a method such as screen printing.
  • the ceramic green sheets printed with the metal paste are stacked, pressure-bonded, and fired.
  • the metallized layer is deposited on the base body 2 as the first signal conductor 3, the connection conductor 5, the first ground conductor 6, the second ground conductor 61, and the third ground conductor 71.
  • the surfaces of the first signal conductor 3, the connection conductor 5, the first ground conductor 6, the second ground conductor 61, and the third ground conductor 71 may be nickel-plated or gold-plated.
  • the wettability of a bonding material such as a brazing material on the surface of the metal layer can be improved.
  • the bondability of the external substrate 8 connected to the metal layer can be improved, and the corrosion resistance or weather resistance can be improved.
  • through holes are provided at predetermined positions of a plurality of ceramic green sheets, and the metal paste is filled in the through holes. Then, the ceramic green sheets are laminated, pressed, and fired.
  • the through holes may be provided by, for example, mechanical punching using a metal pin or drilling such as laser light.
  • a means such as vacuum suction may be used together to facilitate the filling of the metal paste.
  • the wiring substrate 1 can be manufactured by passing through the above steps.
  • An electronic component storage package 10 includes a wiring base 1 and a frame 11.
  • the frame 11 may be located on the lower surface of the base 2.
  • the frame portion 11 may surround the mounting area of the electronic component 101 on the lower surface of the base body 2.
  • the shape of the frame portion 11 may be, for example, a circular shape, a rectangular shape, or an elliptical shape when viewed from the bottom. Further, the frame portion 11 may match the shape of the wiring substrate 1 in a top view.
  • the size of the radius may be 1 mm ⁇ 1 mm to 10 mm ⁇ 10 mm.
  • the size When the shape of the frame portion 11 in a bottom view is rectangular, the size may be 1 mm ⁇ 1 mm to 10 mm ⁇ 10 mm.
  • the height of the frame portion 11 may be 0.5 mm to 5 mm.
  • a metal such as iron, copper, nickel, chromium, cobalt, molybdenum, or tungsten can be used.
  • the frame portion 11 can be made of an alloy of the above-mentioned metals, for example, a copper-tungsten alloy, a copper-molybdenum alloy, an iron-nickel-cobalt alloy or the like.
  • An electronic device 100 includes an electronic component storage package 10, an electronic component 101, and an external board 8.
  • the electronic component 101 is mounted in the mounting area on the lower surface of the base 2.
  • the electronic component 101 may be, for example, an LD or PD.
  • the electronic component 101 may be connected to the first pad 23 and the second pad 24 located on the lower surface of the base 2 by wire bonding or the like.
  • the first pad 23 may be electrically connected to the terminal 4.
  • the second pad 24 may be electrically connected to the first signal conductor 3.
  • the first pad 23 may have, for example, a circular shape when viewed from below.
  • the size of the radius may be 0.1 mm to 0.5 mm.
  • the number of the first pads 23 may correspond to the number of the terminals 4.
  • the second pad 24 may have, for example, a rectangular shape when viewed from above. When the second pad 24 has a rectangular shape in a bottom view, the size thereof may be 0.1 ⁇ 0.1 mm to 1 ⁇ 1 mm.
  • the number of second pads 24 may correspond to the number of first signal conductors 3.
  • the first pad 23 and the second pad 24 may include a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese.
  • the first pad 23 and the second pad 24 may be co-fired or metal-plated on the surface of the insulating layer in the form of a metallized layer or a plated layer.
  • the external substrate 8 has through holes 81 that correspond to the terminals 4 in a one-to-one correspondence, and when the external substrate 8 is connected to the wiring substrate 1, the terminals 4 are inserted into the through holes 81 of the external substrate 8. Is inserted.
  • the external board 8 may have an upper surface and a lower surface.
  • the through hole 81 may penetrate from the upper surface to the lower surface of the external substrate 8.
  • the area of the through hole 81 may be smaller than that of the enlarged diameter portion 43 and may be slightly larger than the size of the cross-sectional area of the second end 42. Since the area of the through hole 81 is smaller than that of the expanded diameter portion 43 and larger than the cross-sectional area of the second end 42, the wiring base 1 and the external substrate 8 can be easily aligned when the terminal 4 is inserted. Therefore, it is possible to reduce the positional deviation of the external substrate 8. As a result, high-frequency signal transmission between the electronic component 101 arranged on the wiring substrate 1 and the external substrate 8 connected to the electronic component 101 can be stably controlled. Further, since the brazing material applied to the expanded diameter portion 43 and the external substrate 8 can be bonded, the bonding strength can be increased.
  • the second signal conductor 82 may be located on the lower surface of the external substrate 8.
  • the second signal conductor 82 may be in a position in contact with the first signal conductor 3 when connected to the wiring substrate 1. This facilitates electrical connection between the second signal conductor 82 and the first signal conductor 3 and enables efficient signal transmission.
  • the external board 8 may be, for example, an FPC.
  • a conductive metal such as a copper foil is attached to the upper and lower surfaces of a thin and soft base film having insulation such as polyimide. Then, by etching the conductive metal into a predetermined shape, the external substrate 8 provided with the second signal conductor 82 having a desired shape can be manufactured.
  • connection between the external substrate 8 and the wiring substrate 1 is performed by inserting the terminal 4 into the through hole 81 of the external substrate 8 and connecting the expanded diameter portion 43 of the terminal 4 and the lower surface of the external substrate 8 via a bonding material such as a brazing material. And the upper surface of the wiring substrate 1 and the lower surface of the external substrate 8 are closely contacted and connected. At this time, the upper surface of the wiring substrate 1 and the lower surface of the external substrate 8 are connected via a brazing material or the like.
  • connection between the external substrate 8 and the wiring substrate 1 may be made by joining not only the lower surface of the external substrate 8 and the expanded diameter portion 43 but also the upper surface of the external substrate 8 and the terminal 4 via a brazing material or the like. As a result, the bonding strength between the wiring substrate 1 and the external substrate 8 can be increased.
  • the second signal conductor 82 and the wiring base 1 may be electrically connected via a brazing material or the like.
  • the lid may be joined to the frame 11.
  • the lid When viewed from the bottom, the lid may have, for example, a circular shape, a rectangular shape, or an elliptical shape. Further, the lid body may match the shape of the base body 2 when viewed from below.
  • the lid may be made of a metal containing iron, copper, nickel, chromium, cobalt, molybdenum, or tungsten, for example.
  • the lid may use an alloy of the above-mentioned metals, for example, a copper-tungsten alloy, a copper-molybdenum alloy, an iron-nickel-cobalt alloy, or the like.
  • the lid can be produced by subjecting an ingot of a metal material to a metal working method such as a rolling working method or a punching working method.
  • wiring base 10 electronic component storage package 11: frame 100: electronic device 101: electronic component 2: base 21: first recess 22: via 23: first pad 24: second pad 3: first signal conductor 4: terminal 41: first end 42: second end 43: expanded portion 5: connection conductor 6: first ground conductor 61: second ground conductor 7: second recess 71: third ground conductor 8: external substrate 81 : Through hole 82: Second signal conductor

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Structure Of Printed Boards (AREA)
  • Semiconductor Lasers (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

A wiring base according to an embodiment of the present invention is provided with a base and at least one terminal. The base has a recess opened in the upper surface. At least one terminal is positioned in the recess and extends from a first end toward a second end. The terminal has the first end positioned inside the recess and the second end positioned outside the recess, and has a diameter expansion part inside the recess.

Description

配線基体、電子部品収納用パッケージおよび電子装置Wiring substrate, electronic component storage package, and electronic device
 本開示は、配線基体、電子部品収納用パッケージおよび電子装置に関する。 The present disclosure relates to a wiring substrate, a package for storing electronic components, and an electronic device.
 情報技術の発達に伴い、高速かつ長距離の信号伝送を可能とする光通信の利用が進められている。光信号を伝送する電子装置等には、動作を安定化するとともに伝送効率を向上させることが要求されている。電子装置は、配線基体と、LD(Laser Diode:レーザダイオード)またはPD(Photo Diode:フォトダイオ-ド)等の電子部品と、から構成されることが特許文献1に記載されている。 With the development of information technology, the use of optical communication that enables high-speed and long-distance signal transmission is being promoted. Electronic devices that transmit optical signals are required to have stable operation and improved transmission efficiency. Patent Document 1 describes that an electronic device is composed of a wiring substrate and electronic components such as an LD (Laser Diode) or a PD (Photo Diode).
特開2012-256692号公報JP 2012-256692 A
 本開示の一実施形態に係る配線基体は、基体と、少なくとも1つの端子と、を備えている。基体は、上面に開口する第1凹部を有する。端子は、第1端から第2端に向かって延びており、第1凹部に少なくとも1つ以上位置する。端子は、第1端が第1凹部内、第2端が第1凹部外に位置しているとともに、第1凹部内に拡径部を有する。 A wiring substrate according to an embodiment of the present disclosure includes a substrate and at least one terminal. The base body has a first concave portion that is open on the upper surface. At least one terminal extends from the first end toward the second end and is located in the first recess. The terminal has a first end located inside the first recess and a second end located outside the first recess, and has a diameter-expanded portion inside the first recess.
 本開示の一実施形態に係る電子部品収納用パッケージは、配線基体と、枠部とを備える。枠部は、基体の上面の反対の下面に位置する。 An electronic component storage package according to an embodiment of the present disclosure includes a wiring base and a frame. The frame portion is located on the lower surface opposite to the upper surface of the base body.
 本開示の一実施形態に係る電子装置は、電子部品と、外部基板と、を備える。電子部品は、基体における下面に実装される。外部基板は、端子と対応する貫通孔を有する。 An electronic device according to an embodiment of the present disclosure includes an electronic component and an external board. The electronic component is mounted on the lower surface of the base. The external substrate has a through hole corresponding to the terminal.
本開示の一実施形態に係る配線基体の上面斜視図である。FIG. 3 is a top perspective view of a wiring substrate according to an embodiment of the present disclosure. 本開示の一実施形態に係る配線基体の上面斜視図である。FIG. 3 is a top perspective view of a wiring substrate according to an embodiment of the present disclosure. 本開示の一実施形態に係る電子部品収納用パッケージの上面斜視図である。FIG. 3 is a top perspective view of an electronic component storage package according to an embodiment of the present disclosure. 本開示の一実施形態に係る電子部品収納用パッケージの上面斜視図である。FIG. 3 is a top perspective view of an electronic component storage package according to an embodiment of the present disclosure. 本開示の一実施形態に係る電子部品収納用パッケージの下面斜視図である。FIG. 3 is a bottom perspective view of an electronic component storage package according to an embodiment of the present disclosure. 本開示の一実施形態に係る電子部品収納用パッケージの側面図である。FIG. 3 is a side view of the electronic component storage package according to the embodiment of the present disclosure. 本開示の一実施形態に係る配線基体と外部基板とが接続した上面斜視図である。FIG. 3 is a top perspective view in which a wiring base and an external substrate according to an embodiment of the present disclosure are connected. 本開示の一実施形態に係る電子部品収納用パッケージと外部基板とが接続した上面斜視図である。FIG. 3 is a top perspective view in which an electronic component storing package and an external substrate according to an embodiment of the present disclosure are connected. 本開示の一実施形態に係る電子部品収納用パッケージと接続する外部基板の上面斜視図である。FIG. 6 is a top perspective view of an external substrate connected to the electronic component storage package according to the embodiment of the present disclosure. 本開示の一実施形態に係る電子部品収納用パッケージと接続する外部基板の下面斜視図である。FIG. 4 is a bottom perspective view of an external substrate connected to an electronic component storage package according to an embodiment of the present disclosure. 図1の配線基体を拡大した上面斜視図である。It is a top perspective view which expanded the wiring base body of FIG. 図1の配線基体のXII-XIIでの断面視である。2 is a sectional view of the wiring substrate of FIG. 1 taken along line XII-XII. 図1の配線基体のXIV-XIVでの断面視である。2 is a sectional view of the wiring substrate of FIG. 1 taken along line XIV-XIV. 図2の配線基体のXIII-XIIIでの断面視である。3 is a cross-sectional view of the wiring substrate of FIG. 2 taken along line XIII-XIII.
 以下に、本開示の一実施形態に係る配線基体1について、図面を参照しながら説明する。 The wiring substrate 1 according to an embodiment of the present disclosure will be described below with reference to the drawings.
  <配線基体1の構成>
 電子装置100は、電子部品収納用パッケージ10を備える。電子部品収納用パッケージ10は、配線基体1を備える。そして、配線基体1は、基体2、および端子4を備えている。なお、配線基体1は、基体2の上面に、第1凹部21、第1信号導体3、および端子4等が位置することで構成される。
<Structure of wiring base 1>
The electronic device 100 includes an electronic component storage package 10. The electronic component storage package 10 includes a wiring substrate 1. The wiring base 1 includes a base 2 and terminals 4. The wiring base 1 is configured by arranging the first recess 21, the first signal conductor 3, the terminal 4, and the like on the upper surface of the base 2.
 基体2は、上面視をした場合、例えば円形状であってもよい。基体2が上面視で円形状である場合、半径の大きさは0.5mm~5mmで、高さは1mm~10mmであってもよい。円形状とは、上面視をした場合、円の一部分が切り取られた形状を含んでいてもよい。また、基体2は、上面視をした場合、矩形状であってもよい。基体2が上面視で矩形状である場合、大きさは1mm×1mm~10mm×10mmであってもよい。基体2は誘電体材料からなっていてもよい。また。基体2は、誘電体材料の積層によって形成されていてもよい。なお、本明細書では、誘電体材料が積層されたものを絶縁層と表現する場合がある。誘電体材料には、例えば酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体または窒化珪素質焼結体のようなセラミック材料、またはガラスセラミック材料等を用いることができる。 The base body 2 may have, for example, a circular shape when viewed from above. When the base 2 is circular in a top view, the radius may be 0.5 mm to 5 mm and the height may be 1 mm to 10 mm. The circular shape may include a shape in which a part of a circle is cut off when viewed from above. Further, the base body 2 may have a rectangular shape when viewed from above. When the base 2 has a rectangular shape in a top view, the size may be 1 mm×1 mm to 10 mm×10 mm. The base body 2 may be made of a dielectric material. Also. The base 2 may be formed by stacking dielectric materials. In addition, in this specification, a laminate of dielectric materials may be referred to as an insulating layer. The dielectric material includes, for example, a ceramic material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body or a silicon nitride sintered body, or a glass ceramic material. Etc. can be used.
 基体2の上面には、第1凹部21が位置している。第1凹部21は上面に開口している。第1凹部21は、基体2の上面から上面と反対の下面に向かう凹みを、成形体への切削加工、または、焼成体へのドリル加工等で形成されてもよい。また、基体2が、誘電体材料の積層によって形成される場合は、第1凹部21が位置する場所について、複数の誘電体を一部切り取り、重ね合わせることで第1凹部21を形成してもよい。第1凹部21の形状は、上面視をした場合、例えば円形状であってもよい。第1凹部21の形状が上面視で円形状である場合、半径の大きさは0.1mm~1mmであってもよい。また、第1凹部21は、上面視をした場合、矩形状あるいは矩形状の角部が曲線となる長円形であってもよい。第1凹部21が上面視で矩形状である場合、大きさが0.2mm×1mm~2mm×10mmであってもよい。第1凹部21が上面視で長円形である場合、曲線部分の曲率半径の大きさは、0.1mm~1mmであってもよい。第1凹部21が上面視で円形状あるいは長円形である場合、上面視での形状が矩形状であるときのような角部への応力集中によるクラックが生じない。また、第1凹部21は、上面から下面に向かう方向の断面視をした場合、例えば矩形状であってもよい。上面から下面に向かう方向での第1凹部21の深さは0.1mm~3mmであってもよい。また、第1凹部21は、上面から下面に向かう方向の断面視をした場合、テーパ状、逆テーパ状あるいは段状であってもよい。 The first recess 21 is located on the upper surface of the base 2. The first recess 21 is open on the upper surface. The first recess 21 may be formed by forming a recess from the upper surface of the base body 2 toward the lower surface opposite to the upper surface by cutting a molded body or drilling a fired body. Further, when the base body 2 is formed by stacking the dielectric material, even if the first concave portion 21 is formed by cutting out a part of a plurality of dielectrics at the place where the first concave portion 21 is located and stacking them. Good. The shape of the first recess 21 may be, for example, circular when viewed from above. When the shape of the first recess 21 is circular in a top view, the size of the radius may be 0.1 mm to 1 mm. In addition, the first recess 21 may have a rectangular shape or an elliptical shape in which the corners of the rectangular shape are curved when viewed from above. When the first recess 21 has a rectangular shape in a top view, the size may be 0.2 mm×1 mm to 2 mm×10 mm. When the first recess 21 is oval in a top view, the radius of curvature of the curved portion may be 0.1 mm to 1 mm. When the first recess 21 has a circular shape or an elliptical shape in a top view, cracks due to stress concentration on corners unlike the case where the shape of the first recess 21 is a rectangular shape in a top view do not occur. The first recess 21 may have, for example, a rectangular shape when viewed in a cross section in the direction from the upper surface to the lower surface. The depth of the first recess 21 in the direction from the upper surface to the lower surface may be 0.1 mm to 3 mm. Further, the first recess 21 may have a taper shape, an inverse taper shape, or a step shape when viewed in a cross section in a direction from the upper surface to the lower surface.
 端子4は、第1端41と、第2端42とを有している。端子4は、第1端41から第2端42に向かって延びている。端子4の形状は棒状であってもよい。端子4は基体2の上面に対して垂直方向に延びて位置していてもよい。なお、本明細書における垂直とは、垂直方向に加え、製造の誤差により垂直方向に対しやや傾いている場合も含む。誤差は、-0.1°~+0.1°の範囲であってもよい。 The terminal 4 has a first end 41 and a second end 42. The terminal 4 extends from the first end 41 toward the second end 42. The terminal 4 may be rod-shaped. The terminal 4 may be located so as to extend in the direction perpendicular to the upper surface of the base 2. Note that the term "vertical" in this specification includes not only the vertical direction but also a case where the vertical direction is slightly inclined due to manufacturing errors. The error may be in the range of -0.1° to +0.1°.
 端子4は、図11または図12に示すように、第1端41が第1凹部21内に位置しており、第2端42が第1凹部21の外に位置している。端子4は、第1凹部21内に拡径部43を有している。第1凹部21内に、このような拡径部43を有していることにより、第1凹部21内における端子4の接合の際に、拡径部43と塗布されるろう材等の接合材との接触面積が増えるため、例えば、FPC(Flexible Printed Circuits)等の外部基板8と配線基体1との接合強度が上がる。また、外部基板8と配線基体1とを接続する際に、拡径部43が第1凹部21の開口から突出していないため、配線基体1から外部基板8が浮いた状態(浮き)にならず、接続信頼性に優れる。また、例えば、外部基板8と第1凹部21の拡径部43とを、ろう材を用いて接続する際、第1凹部21は、接合に用いられなかったろう材のろう材溜まりとすることができるため、配線基体1の上面にろう材がはみだしにくくなる。その結果、はみだしたろう材による、配線基体1からの外部基板8の浮きを低減することができる。なお、本明細書では、第1凹部21の開口より上であり開口に近い部分の径を基準とし、その部分より径が大きい部分を拡径部43とする。 The terminal 4 has a first end 41 located inside the first recess 21 and a second end 42 located outside the first recess 21, as shown in FIG. 11 or 12. The terminal 4 has an enlarged diameter portion 43 in the first recess 21. By having such an enlarged diameter portion 43 in the first concave portion 21, a joining material such as a brazing material applied to the enlarged diameter portion 43 when the terminal 4 is joined in the first concave portion 21. Since the contact area with the wiring substrate 1 increases, the bonding strength between the external substrate 8 such as FPC (Flexible Printed Circuits) and the wiring substrate 1 increases. Further, when the external substrate 8 and the wiring substrate 1 are connected, since the enlarged diameter portion 43 does not protrude from the opening of the first recess 21, the external substrate 8 does not float (float) from the wiring substrate 1. Excellent connection reliability. Further, for example, when the external substrate 8 and the expanded diameter portion 43 of the first recess 21 are connected using a brazing material, the first recess 21 may be a brazing material reservoir of the brazing material not used for joining. Therefore, it becomes difficult for the brazing material to protrude onto the upper surface of the wiring substrate 1. As a result, it is possible to reduce the floating of the external substrate 8 from the wiring substrate 1 due to the brazing filler metal that has overflowed. In the present specification, the diameter of a portion of the first recess 21 above the opening and close to the opening is used as a reference, and a portion having a diameter larger than that portion is defined as the enlarged diameter portion 43.
 図12あるいは図14に示すように。拡径部43は、第1端41から第1凹部21の開口に向かって延びていてもよい。言い換えると、拡径部43が第1端41を含んでいてもよい。更に言い換えると、拡径部43の径の面積は、第1端41の径の面積と同じであってもよい。本明細書において、拡径部43の径の面積は、端子4の軸に直交する断面の面積である。第1端41の径の面積は、第1端41の表面積である。拡径部43の径の面積が第1端41の径の面積と同じであることによって、接続導体5との接合強度を高めることができる。なお、本明細書では、拡径部43の径の面積をS1とし、第1端41の径の面積をS2とする。 As shown in Figure 12 or Figure 14. The expanded diameter portion 43 may extend from the first end 41 toward the opening of the first recess 21. In other words, the expanded diameter portion 43 may include the first end 41. Furthermore, in other words, the area of the diameter of the expanded diameter portion 43 may be the same as the area of the diameter of the first end 41. In this specification, the area of the diameter of the expanded diameter portion 43 is the area of the cross section orthogonal to the axis of the terminal 4. The area of the diameter of the first end 41 is the surface area of the first end 41. Since the area of the diameter of the enlarged diameter portion 43 is the same as the area of the diameter of the first end 41, the joint strength with the connecting conductor 5 can be increased. In this specification, the diameter area of the expanded diameter portion 43 is S1, and the diameter area of the first end 41 is S2.
 また、図13に示すように、拡径部43は、第1端41と第2部42の間から第1凹部21の開口に向かって延びていてもよい。言い換えると、拡径部43が、第1端41を含んでいなくてもよい。更に言い換えると、拡径部43の径の面積は、第1端41の径の面積よりも大きくてもよい。これによって、拡径部43が第1端41を含まないことによって、例えば、第1凹部21が、第1端41と嵌合する窪みをさらに備えている場合に、端子4と基体2との接続を更に安定させることができる。 Further, as shown in FIG. 13, the expanded diameter portion 43 may extend from between the first end 41 and the second portion 42 toward the opening of the first recess 21. In other words, the expanded diameter portion 43 may not include the first end 41. Furthermore, in other words, the area of the diameter of the expanded diameter portion 43 may be larger than the area of the diameter of the first end 41. As a result, since the expanded diameter portion 43 does not include the first end 41, for example, when the first recess 21 further includes a recess that fits in the first end 41, the terminal 4 and the base body 2 are separated from each other. The connection can be made more stable.
 端子4の長さは1mm~10mmであってもよい。端子4が軸方向に交わる断面視で円形である場合、拡径部43の半径は0.1mm~0.8mmであってもよく、拡径部43以外の半径は0.05mm~0.5mmであってもよい。端子4は、例えば鉄等を含む金属であってもよい。端子4は、外部電源と電気的に接続し、搭載される電子部品101に電気を供給する。配線基体1の設計に応じて、端子4を複数設けてもよい。端子4が複数あるとき、それぞれの端子4同士が電気的に接続しているものがあってもよいし、それぞれの端子4同士が電気的に接続していなくてもよい。 The length of the terminal 4 may be 1 mm to 10 mm. When the terminal 4 is circular in a cross-sectional view intersecting in the axial direction, the radius of the expanded diameter portion 43 may be 0.1 mm to 0.8 mm, and the radius other than the expanded diameter portion 43 is 0.05 mm to 0.5 mm. May be The terminal 4 may be a metal including iron, for example. The terminal 4 is electrically connected to an external power source and supplies electricity to the mounted electronic component 101. A plurality of terminals 4 may be provided depending on the design of the wiring substrate 1. When there are a plurality of terminals 4, some terminals 4 may be electrically connected to each other, or each terminal 4 may not be electrically connected to each other.
 拡径部43は、端子の軸を含む断面視をした場合、段状であってもよい。拡径部43が段状であるとき、段は、第1凹部21の開口以下、もしくは開口よりも下面方向に位置している。言い換えると、拡径部43は、開口から上部方向に拡径部43が出っ張らない。拡径部43が段状であることによって、外部基板8と第1凹部21の拡径部43とを、ろう材等を用いて接続しやすくなる。その結果、端子4と基体2との接続が一層安定する。 The expanded diameter portion 43 may have a stepped shape when viewed in cross section including the axis of the terminal. When the expanded diameter portion 43 has a step shape, the step is located below the opening of the first recess 21 or in the lower surface direction than the opening. In other words, the expanded diameter portion 43 does not project upward from the opening. Since the expanded diameter portion 43 is step-shaped, it becomes easy to connect the external substrate 8 and the expanded diameter portion 43 of the first recess 21 with a brazing material or the like. As a result, the connection between the terminal 4 and the base 2 becomes more stable.
 図1に示す本開示の一実施形態は、第1凹部21には端子4が複数位置している。また、基体2の上面には、第1凹部21が複数位置していてもよく、複数の第1凹部21のそれぞれに複数の端子4が位置していてもよい。 In the embodiment of the present disclosure shown in FIG. 1, a plurality of terminals 4 are located in the first recess 21. A plurality of first recesses 21 may be located on the upper surface of the base body 2, and a plurality of terminals 4 may be located in each of the plurality of first recesses 21.
 接続導体5は、第1凹部21に位置し、第1端41に繋がる。図1に示す本開示の一実施形態では、接続導体5は、複数の端子4の数だけ第1凹部21内に位置しており、複数の端子4のそれぞれと一対一対応して電気的に接続している。なお、端子4および接続導体5が位置していない領域には、絶縁層が位置していてもよい。接続導体5は、例えば基体2と端子4とをろう材等の接合材で接続するために用いてもよい。接続導体5は、上面視をした場合、拡径部43の外周を囲んで位置していてもよい。接続導体5が拡径部43の外周を囲んで位置していることによって、端子4を接続導体5に接合しやすくなるとともに、端子4と外部基板8とをろう材によって接合する際、第1凹部21内に流れ込んだろう材を受け止めることができるので、端子4同士の短絡の発生を低減することができる。 The connecting conductor 5 is located in the first recess 21 and is connected to the first end 41. In the embodiment of the present disclosure illustrated in FIG. 1, the connection conductors 5 are located in the first recess 21 by the number of the plurality of terminals 4, and electrically correspond to each of the plurality of terminals 4 in a one-to-one correspondence. Connected. An insulating layer may be located in a region where the terminal 4 and the connecting conductor 5 are not located. The connection conductor 5 may be used, for example, to connect the base 2 and the terminal 4 with a bonding material such as a brazing material. The connection conductor 5 may be located so as to surround the outer circumference of the expanded diameter portion 43 when viewed from above. Since the connecting conductor 5 is positioned so as to surround the outer circumference of the expanded diameter portion 43, the terminal 4 can be easily joined to the connecting conductor 5, and at the time of joining the terminal 4 and the external substrate 8 with a brazing material, Since the brazing material that has flowed into the recess 21 can be received, it is possible to reduce the occurrence of a short circuit between the terminals 4.
 接続導体5の形状は、上面視をした場合、例えば矩形状あるいは円形状であってもよい。接続導体5が上面視をしたときに矩形状である場合、大きさは0.2mm×0.2mm~2mm×2mmであってもよい。接続導体5が上面視をしたときに円形状である場合、半径の大きさは0.1mm~1mmであってもよい。接続導体5は、例えば、金、銀、銅、ニッケル、タングステン、モリブデンまたはマンガンなどの金属材料からなり、最上層の絶縁層の表面にメタライズ層あるいはめっき層等の形態で同時焼成されたり、金属めっきされたりするものでもよい。 The shape of the connecting conductor 5 may be, for example, rectangular or circular when viewed from above. When the connecting conductor 5 has a rectangular shape when viewed from above, the size may be 0.2 mm×0.2 mm to 2 mm×2 mm. When the connecting conductor 5 has a circular shape when viewed from above, the size of the radius may be 0.1 mm to 1 mm. The connecting conductor 5 is made of, for example, a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese, and is co-fired in the form of a metallized layer or a plated layer on the surface of the uppermost insulating layer, or a metal. It may be plated.
 図2に示す本開示の一実施形態は、第1凹部21に端子4が1つ位置している。また、第1凹部21は複数あってもよく、第1凹部21のそれぞれに端子4が1つ位置していてもよい。第1凹部21に端子4が1つ位置していることによって、図1の実施形態に比べて、外部基板8がたわみにくくなる。その結果、第1凹部21内に外部基板8がたわむことによる、第1凹部21の開口と基体2の上面との境界での外部基板8の浮きを低減できる。 In one embodiment of the present disclosure shown in FIG. 2, one terminal 4 is located in the first recess 21. There may be a plurality of first recesses 21, and one terminal 4 may be located in each of the first recesses 21. Since one terminal 4 is located in the first recess 21, the external substrate 8 is less likely to bend as compared with the embodiment of FIG. As a result, it is possible to reduce the floating of the external substrate 8 at the boundary between the opening of the first recess 21 and the upper surface of the substrate 2 due to the bending of the external substrate 8 in the first recess 21.
 また、図2に示す本開示の一実施形態では、接続導体5の形状が、第1凹部21の形状と対応していてもよい。接続導体5の形状が、第1凹部21の形状と対応していることで、基体2と端子4との接続領域を広くすることができ、その結果、端子4と接続導体5との接合強度を上げることができる。 Further, in the embodiment of the present disclosure shown in FIG. 2, the shape of the connection conductor 5 may correspond to the shape of the first recess 21. Since the shape of the connection conductor 5 corresponds to the shape of the first recess 21, the connection region between the base 2 and the terminal 4 can be widened, and as a result, the bonding strength between the terminal 4 and the connection conductor 5 can be increased. Can be raised.
 第1信号導体3は、基体2の上面に位置するとともに第1方向に延びている。第1信号導体3は、上面視をした場合、第1凹部21と離れている。第1信号導体3の形状は、上面視をした場合、例えば矩形状であってもよい。第1信号導体3の上面視での形状が矩形状である場合、幅が0.05mm~1mm、長さが0.5mm~5mmであってもよい。第1信号導体3は、例えば金、銀、銅、ニッケル、タングステン、モリブデンまたはマンガンなどの金属材料を含んでいてもよい。第1信号導体3は、基体2の上面にメタライズ層あるいはめっき層等の形態で同時焼成されたり、金属めっきされたりするものでもよい。また、第1信号導体3は、基体2の上面に対して、略垂直方向に延びて位置していてもよい。第1信号導体3は、例えば10~60GHz帯に属する高周波信号を伝送するために用いることができる。 The first signal conductor 3 is located on the upper surface of the base 2 and extends in the first direction. The first signal conductor 3 is separated from the first recess 21 when viewed from above. The shape of the first signal conductor 3 may be, for example, a rectangular shape when viewed from above. When the shape of the first signal conductor 3 in a top view is rectangular, the width may be 0.05 mm to 1 mm and the length may be 0.5 mm to 5 mm. The first signal conductor 3 may include a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese. The first signal conductor 3 may be co-fired or metal-plated on the upper surface of the substrate 2 in the form of a metallized layer, a plated layer, or the like. Further, the first signal conductor 3 may be located so as to extend in a substantially vertical direction with respect to the upper surface of the base 2. The first signal conductor 3 can be used to transmit a high frequency signal belonging to, for example, the 10 to 60 GHz band.
 第1信号導体3は、一対の第1信号導体3であって、互いに並行に位置していてもよい。一対の第1信号導体3が平行に位置していることで、高周波信号を伝送する際の伝送損失を低減することができる。 The first signal conductors 3 are a pair of first signal conductors 3 and may be positioned in parallel with each other. Since the pair of first signal conductors 3 are positioned in parallel, it is possible to reduce transmission loss when transmitting a high frequency signal.
 第1方向に延び、第1信号導体3の少なくとも一部を挟む一対の第1接地導体6をさらに備えていてもよい。第1接地導体6を備えることで、第1信号導体3が一対の第1信号導体3である場合、第1信号導体3と第1接地導体6の配置がコプレーナ構造となる。第1信号導体3と第1接地導体6の配置がコプレーナ構造となることで、高周波の信号を円滑に伝送することができる。第1接地導体6は、例えば、金、銀、銅、ニッケル、タングステン、モリブデンまたはマンガンなどの金属材料からなり、最上層の絶縁層の表面にメタライズ層あるいはめっき層等の形態で同時焼成されたり、金属めっきされたりするものでもよい。 A pair of first ground conductors 6 extending in the first direction and sandwiching at least a part of the first signal conductor 3 may be further provided. By providing the first ground conductor 6, when the first signal conductor 3 is a pair of first signal conductors 3, the arrangement of the first signal conductor 3 and the first ground conductor 6 becomes a coplanar structure. Since the first signal conductor 3 and the first ground conductor 6 are arranged in a coplanar structure, a high frequency signal can be smoothly transmitted. The first ground conductor 6 is made of, for example, a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese, and is co-fired on the surface of the uppermost insulating layer in the form of a metallized layer or a plated layer. Alternatively, it may be metal-plated.
 また、上面視で第1信号導体3よりも上面の中心の近くに位置する第2接地導体61を有していてもよい。第2接地導体61は、一対の第1接地導体6と繋がる。第2接地導体61によって、配線基体1はグランドとして機能する領域が広くなる。その結果、高周波信号の伝送が一層安定する。第2接地導体61は、例えば金、銀、銅、ニッケル、タングステン、モリブデンまたはマンガンなどの金属材料からなり、最上層の絶縁層の表面にメタライズ層あるいはめっき層等の形態で同時焼成されたり、金属めっきされたりするものでもよい。 Further, the second ground conductor 61 may be located closer to the center of the upper surface than the first signal conductor 3 in a top view. The second ground conductor 61 is connected to the pair of first ground conductors 6. The second ground conductor 61 widens the area of the wiring substrate 1 that functions as a ground. As a result, the transmission of the high frequency signal becomes more stable. The second ground conductor 61 is made of a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese, and is co-fired on the surface of the uppermost insulating layer in the form of a metallized layer or a plated layer. It may be metal-plated.
 また、第1接地導体6は、上面視で基体2の外周、かつ、第1信号導体3の先に位置させなくてもよい。第1接地導体6を、基体2の外周、かつ、第1信号導体3の先に位置させないことにより、外部基板8と配線基体1とを接続する際に、第2信号導体82と第1接地導体6とが接することによる短絡の発生を低減することができる。なお、第1信号導体3の先、かつ、基体2の外周とは、図面の図1~図4のAの領域を指す。 Further, the first ground conductor 6 does not have to be located on the outer periphery of the base body 2 and beyond the first signal conductor 3 in a top view. Since the first ground conductor 6 is not located on the outer periphery of the base 2 and beyond the first signal conductor 3, the second signal conductor 82 and the first ground are connected when the external substrate 8 and the wiring base 1 are connected. Occurrence of a short circuit due to contact with the conductor 6 can be reduced. The tip of the first signal conductor 3 and the outer periphery of the substrate 2 refer to the area A in FIGS. 1 to 4 of the drawings.
 第1接地導体6は、ビア22で、基体2の内部に位置する接地導体と電気的に接続していてもよい。第1接地導体6がビア22を介して基体2の内部に位置する接地導体と接続されることで、グランドとして機能する領域を広くすることができる。 The first ground conductor 6 may be electrically connected to the ground conductor located inside the base 2 by the via 22. Since the first ground conductor 6 is connected to the ground conductor located inside the base 2 through the via 22, the region functioning as the ground can be widened.
 第2接地導体61は、ビア22で、基体2の内部に位置する接地導体と電気的に接続していてもよい。第2接地導体61がビア22を介して基体2の内部に位置する接地導体と接続されることで、グランドとして機能する領域を広くすることができる。 The second ground conductor 61 may be electrically connected to the ground conductor located inside the base 2 by the via 22. By connecting the second ground conductor 61 to the ground conductor located inside the base 2 through the via 22, it is possible to widen the region functioning as the ground.
 基体2は、基体の外周、かつ、第1接地導体の先に位置する第2凹部7をさらに有していてもよい。第2凹部7は、上面から側面にかけて形成されており、上面および側面に連続して開口していてもよい。また、基体2は、第2凹部7を複数有していてもよい。第2凹部7は、上面から側面にかけて切削等で基体2を切欠いて形成されてもよい。また、第2凹部7は、基体2が誘電体材料の積層で形成される場合、第2凹部7が位置する場所について、複数の誘電体を一部切り取り、重ね合わせることで第2凹部7を形成してもよい。第2凹部7は上面視をした場合、例えば円形状、矩形状あるいは楕円形状であってもよい。第2凹部7が上面視で円形状である場合、半径の大きさは0.1mm~1mmであってもよい。第2凹部7が上面視で矩形状である場合、大きさが0.2mm×0.2mm~2mm×10mmであってもよい。第2凹部7が上面視で円形あるいは楕円形である場合、角部に加わる応力を緩和できるため、その結果、配線基体1はクラックが少ないものとなる。 The base 2 may further have a second recess 7 located on the outer periphery of the base and beyond the first ground conductor. The second concave portion 7 is formed from the upper surface to the side surface, and may be continuously opened on the upper surface and the side surface. The base 2 may have a plurality of second recesses 7. The second recess 7 may be formed by cutting the base 2 from the upper surface to the side surface by cutting or the like. In addition, when the base 2 is formed of a stack of dielectric materials, the second recess 7 is formed by cutting a part of a plurality of dielectrics at a position where the second recess 7 is located and stacking the dielectrics. It may be formed. The second recess 7 may have, for example, a circular shape, a rectangular shape, or an elliptical shape when viewed from above. When the second recess 7 has a circular shape in a top view, the size of the radius may be 0.1 mm to 1 mm. When the second recess 7 has a rectangular shape in a top view, the size may be 0.2 mm×0.2 mm to 2 mm×10 mm. When the second recess 7 is circular or elliptical in a top view, the stress applied to the corners can be relaxed, and as a result, the wiring substrate 1 has few cracks.
 第2凹部7の内面には、第3接地導体71が位置していてもよい。第3接地導体71は、例えば基体2の内部に位置する接地導体と電気的に接続していてもよい。第3接地導体71が基体2の内部に位置する接地導体と電気的に接続していることで、グランドとして機能する領域を広くすることができる。その結果、第1信号導体3で伝送される高周波信号のグランド強化につながり、高周波特性を向上させることができる。第3接地導体71は、例えば、金、銀、銅、ニッケル、タングステン、モリブデンまたはマンガンなどの金属材料からなり、最上層の絶縁層の表面にメタライズ層あるいはめっき層等の形態で同時焼成されたり、金属めっきされたりするものでもよい。 The third ground conductor 71 may be located on the inner surface of the second recess 7. The third ground conductor 71 may be electrically connected to a ground conductor located inside the base 2, for example. Since the third ground conductor 71 is electrically connected to the ground conductor located inside the base body 2, it is possible to widen the region functioning as the ground. As a result, the ground of the high frequency signal transmitted by the first signal conductor 3 is strengthened, and the high frequency characteristics can be improved. The third ground conductor 71 is made of a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese, and is co-fired on the surface of the uppermost insulating layer in the form of a metallized layer or a plated layer. Alternatively, it may be metal-plated.
 また、第3接地導体71は、第1接地導体6と繋がるとともに、電気的に接続していてもよい。これによって、グランドとして機能する領域をさらに広くすることができる。 The third ground conductor 71 may be electrically connected to the first ground conductor 6 while being connected to the first ground conductor 6. As a result, the region functioning as the ground can be further widened.
  <配線基体1の製造方法>
 以下に、配線基体1の製造方法の一例について説明する。まず、配線基体1を構成する基体2の製造方法の一例について説明する。基体2が、例えば複数の絶縁層が酸化アルミニウム質焼結体を含む場合であれば、次のようにして作製する。まず、スラリーを、酸化アルミニウムおよび酸化ケイ素等の原料粉末に適当な有機バインダおよび溶剤等を添加混合することで作製する。次に、作製したスラリーにドクターブレード法等の成形法を施し、シート状に成形して複数枚のセラミックグリーンシートを作製する。このとき、セラミックグリーンシートの所定の位置に第1凹部21、および、第2凹部7となる切欠きを設けてもよい。その後、複数枚のセラミックグリーンシートを積層し、圧着する。最後に、この積層されたセラミックグリーンシートを還元雰囲気中で約1600℃の温度で焼成するとともに、切断加工あるいは打ち抜き加工により適当な形状とし、所望の形状の基体2を作製する。
<Method for manufacturing wiring base 1>
Hereinafter, an example of a method of manufacturing the wiring base 1 will be described. First, an example of a method of manufacturing the substrate 2 that constitutes the wiring substrate 1 will be described. If the base body 2 has, for example, a plurality of insulating layers containing an aluminum oxide sintered body, it is manufactured as follows. First, a slurry is prepared by adding and mixing an appropriate organic binder, a solvent and the like to raw material powders such as aluminum oxide and silicon oxide. Next, the formed slurry is subjected to a forming method such as a doctor blade method and formed into a sheet shape to form a plurality of ceramic green sheets. At this time, notches serving as the first recess 21 and the second recess 7 may be provided at predetermined positions of the ceramic green sheet. Then, a plurality of ceramic green sheets are laminated and pressure-bonded. Finally, the laminated ceramic green sheets are fired in a reducing atmosphere at a temperature of about 1600° C., and are cut or punched to have an appropriate shape to produce the base 2 having a desired shape.
 次に、基体2に第1信号導体3、接続導体5、第1接地導体6、第2接地導体61および第3接地導体71を形成する過程を説明する。第1信号導体3、接続導体5、第1接地導体6、第2接地導体61および第3接地導体71が、例えば、タングステン、モリブデンあるいはマンガン等の高融点の金属を含むメタライズ層で形成される場合、次のようにして形成する。まず、金属ペーストを、高融点の金属の粉末を有機溶剤およびバインダとともによく混ざるように練って作製する。金属ペーストを、セラミックグリーンシートの所定部位にスクリーン印刷等の方法で印刷する。その後、金属ペーストが印刷されたセラミックグリーンシートを積層して圧着し、焼成する。以上の工程によって、基体2にメタライズ層が第1信号導体3、接続導体5、第1接地導体6、第2接地導体61および第3接地導体71として被着される。また、第1信号導体3、接続導体5、第1接地導体6、第2接地導体61および第3接地導体71は、表面にニッケルめっきあるいは金めっきを設けてもよい。表面にニッケルめっき、あるいは、金めっきを設けることにより、金属層の表面における、ろう材等の接合材の濡れ性を向上することができる。その結果、金属層と接続される外部基板8の接合性を向上することができるとともに、耐腐食性あるいは耐候性を向上することができる。 Next, a process of forming the first signal conductor 3, the connection conductor 5, the first ground conductor 6, the second ground conductor 61, and the third ground conductor 71 on the base 2 will be described. The first signal conductor 3, the connection conductor 5, the first ground conductor 6, the second ground conductor 61, and the third ground conductor 71 are formed of, for example, a metallized layer containing a high melting point metal such as tungsten, molybdenum, or manganese. In this case, it is formed as follows. First, a metal paste is prepared by kneading a high melting point metal powder together with an organic solvent and a binder. The metal paste is printed on a predetermined portion of the ceramic green sheet by a method such as screen printing. Then, the ceramic green sheets printed with the metal paste are stacked, pressure-bonded, and fired. Through the above steps, the metallized layer is deposited on the base body 2 as the first signal conductor 3, the connection conductor 5, the first ground conductor 6, the second ground conductor 61, and the third ground conductor 71. The surfaces of the first signal conductor 3, the connection conductor 5, the first ground conductor 6, the second ground conductor 61, and the third ground conductor 71 may be nickel-plated or gold-plated. By providing nickel plating or gold plating on the surface, the wettability of a bonding material such as a brazing material on the surface of the metal layer can be improved. As a result, the bondability of the external substrate 8 connected to the metal layer can be improved, and the corrosion resistance or weather resistance can be improved.
 基体2にビア22を形成する場合は、例えば複数のセラミックグリーンシートの所定の位置に貫通孔を設け、貫通孔内に金属ペーストを充填する。そして、セラミックグリーンシートを積層するとともに圧着し、焼成することによって設ける。貫通孔は、例えば金属ピンを用いた機械的な打ち抜き加工、またはレーザ光を用いた加工等の孔あけ加工によって設けてもよい。金属ペーストを貫通孔に充填する際は、真空吸引等の手段を併用して金属ペーストの充填を容易なものとしてもよい。 When forming the vias 22 in the base body 2, for example, through holes are provided at predetermined positions of a plurality of ceramic green sheets, and the metal paste is filled in the through holes. Then, the ceramic green sheets are laminated, pressed, and fired. The through holes may be provided by, for example, mechanical punching using a metal pin or drilling such as laser light. When the through hole is filled with the metal paste, a means such as vacuum suction may be used together to facilitate the filling of the metal paste.
 上述の工程を経ることによって、配線基体1を作製することができる。 The wiring substrate 1 can be manufactured by passing through the above steps.
  <電子部品収納用パッケージ10の構成>
 本開示の一実施形態に係る電子部品収納用パッケージ10は、配線基体1と、枠部11と、を備えている。
<Structure of electronic component storage package 10>
An electronic component storage package 10 according to an embodiment of the present disclosure includes a wiring base 1 and a frame 11.
 枠部11は、基体2の下面に位置していてもよい。枠部11は、基体2の下面のうち電子部品101の実装領域を囲っていてもよい。枠部11の形状は、下面視をした場合、例えば円形状、矩形状あるいは楕円形状であってもよい。また、枠部11は、配線基体1の上面視における形状と一致していてもよい。枠部11の下面視での形状が円形状である場合、半径の大きさは1mm×1mm~10mm×10mmであってもよい。枠部11の下面視での形状が矩形状である場合、大きさは1mm×1mm~10mm×10mmであってもよい。また、枠部11の高さは0.5mm~5mmであってもよい。枠部11は、例えば、鉄、銅、ニッケル、クロム、コバルト、モリブデンまたはタングステンのような金属を用いることができる。また、枠部11は、上述の金属の合金、例えば、銅-タングステン合金、銅-モリブデン合金、鉄-ニッケル-コバルト合金などを用いることができる。 The frame 11 may be located on the lower surface of the base 2. The frame portion 11 may surround the mounting area of the electronic component 101 on the lower surface of the base body 2. The shape of the frame portion 11 may be, for example, a circular shape, a rectangular shape, or an elliptical shape when viewed from the bottom. Further, the frame portion 11 may match the shape of the wiring substrate 1 in a top view. When the shape of the frame portion 11 in a bottom view is circular, the size of the radius may be 1 mm×1 mm to 10 mm×10 mm. When the shape of the frame portion 11 in a bottom view is rectangular, the size may be 1 mm×1 mm to 10 mm×10 mm. Further, the height of the frame portion 11 may be 0.5 mm to 5 mm. For the frame portion 11, for example, a metal such as iron, copper, nickel, chromium, cobalt, molybdenum, or tungsten can be used. The frame portion 11 can be made of an alloy of the above-mentioned metals, for example, a copper-tungsten alloy, a copper-molybdenum alloy, an iron-nickel-cobalt alloy or the like.
  <電子装置100の構成>
 本開示の一実施形態に係る電子装置100は、電子部品収納用パッケージ10と、電子部品101と、外部基板8と、を備えている。
<Configuration of electronic device 100>
An electronic device 100 according to an embodiment of the present disclosure includes an electronic component storage package 10, an electronic component 101, and an external board 8.
 電子部品101は、基体2の下面の実装領域に実装される。電子部品101は、例えば、LDあるいはPD等であってもよい。電子部品101は、基体2の下面に位置する第1パッド23および第2パッド24とワイヤボンディング等で接続してもよい。 The electronic component 101 is mounted in the mounting area on the lower surface of the base 2. The electronic component 101 may be, for example, an LD or PD. The electronic component 101 may be connected to the first pad 23 and the second pad 24 located on the lower surface of the base 2 by wire bonding or the like.
 第1パッド23は、端子4と電気的に接続していてもよい。第2パッド24は、第1信号導体3と電気的に接続していてもよい。第1パッド23は、下面視をした場合、例えば円形状であってもよい。第1パッド23が下面視で円形状である場合、半径の大きさは0.1mm~0.5mmであってもよい。 The first pad 23 may be electrically connected to the terminal 4. The second pad 24 may be electrically connected to the first signal conductor 3. The first pad 23 may have, for example, a circular shape when viewed from below. When the first pad 23 has a circular shape when viewed from below, the size of the radius may be 0.1 mm to 0.5 mm.
 端子4が複数あり、かつ、それぞれの端子4同士が電気的に接続していない場合、第1パッド23の数は端子4の数に対応していてもよい。第2パッド24は、上面視をした場合、例えば矩形状であってもよい。第2パッド24が下面視で矩形状である場合、その大きさは0.1×0.1mm~1×1mmであってもよい。第2パッド24の数は第1信号導体3の数に対応していてもよい。第1パッド23および第2パッド24は、例えば金、銀、銅、ニッケル、タングステン、モリブデンまたはマンガンなどの金属材料を含んでいてもよい。第1パッド23および第2パッド24は、絶縁層の表面にメタライズ層あるいはめっき層等の形態で同時焼成されたり、金属めっきされたりするものでもよい。 When there are a plurality of terminals 4 and the terminals 4 are not electrically connected to each other, the number of the first pads 23 may correspond to the number of the terminals 4. The second pad 24 may have, for example, a rectangular shape when viewed from above. When the second pad 24 has a rectangular shape in a bottom view, the size thereof may be 0.1×0.1 mm to 1×1 mm. The number of second pads 24 may correspond to the number of first signal conductors 3. The first pad 23 and the second pad 24 may include a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, or manganese. The first pad 23 and the second pad 24 may be co-fired or metal-plated on the surface of the insulating layer in the form of a metallized layer or a plated layer.
 図9に示すように、外部基板8は、端子4と一対一で対応している貫通孔81を有し、配線基体1と接続する際に、外部基板8が有する貫通孔81に端子4が挿入される。 As shown in FIG. 9, the external substrate 8 has through holes 81 that correspond to the terminals 4 in a one-to-one correspondence, and when the external substrate 8 is connected to the wiring substrate 1, the terminals 4 are inserted into the through holes 81 of the external substrate 8. Is inserted.
 外部基板8は上面および下面を有していてもよい。貫通孔81は、外部基板8の上面から下面を貫通していてもよい。貫通孔81の面積は、拡径部43よりも小さく、第2端42の断面積の大きさよりわずかに大きくてもよい。貫通孔81の面積が、拡径部43よりも小さく、第2端42の断面積の大きさより大きくことによって、端子4を挿入した際に、配線基体1と外部基板8との位置合わせが容易となり、外部基板8の位置ずれを低減することができる。その結果、配線基体1に配置される電子部品101と電子部品101と接続される外部基板8との高周波信号伝送を、安定して制御することができる。また、拡径部43に塗布したろう材と外部基板8とを接合することができるので、接合強度を高めることができる。 The external board 8 may have an upper surface and a lower surface. The through hole 81 may penetrate from the upper surface to the lower surface of the external substrate 8. The area of the through hole 81 may be smaller than that of the enlarged diameter portion 43 and may be slightly larger than the size of the cross-sectional area of the second end 42. Since the area of the through hole 81 is smaller than that of the expanded diameter portion 43 and larger than the cross-sectional area of the second end 42, the wiring base 1 and the external substrate 8 can be easily aligned when the terminal 4 is inserted. Therefore, it is possible to reduce the positional deviation of the external substrate 8. As a result, high-frequency signal transmission between the electronic component 101 arranged on the wiring substrate 1 and the external substrate 8 connected to the electronic component 101 can be stably controlled. Further, since the brazing material applied to the expanded diameter portion 43 and the external substrate 8 can be bonded, the bonding strength can be increased.
 図10に示すように、外部基板8の下面には、第2信号導体82が位置していてもよい。第2信号導体82は、配線基体1と接続した際に第1信号導体3と接する位置にあってもよい。これによって、第2信号導体82と第1信号導体3とが電気的に接続することが容易となり、効率よく信号を伝送することができる。 As shown in FIG. 10, the second signal conductor 82 may be located on the lower surface of the external substrate 8. The second signal conductor 82 may be in a position in contact with the first signal conductor 3 when connected to the wiring substrate 1. This facilitates electrical connection between the second signal conductor 82 and the first signal conductor 3 and enables efficient signal transmission.
 外部基板8は、例えばFPCであってもよい。外部基板8がFPCである場合、ポリイミド等を含む絶縁性を持った、薄く柔らかいベースフィルムの上下面に銅箔等の導電性金属を貼り合わせる。そして、導電性金属を所定の形状にエッチング加工することにより、所望の形状の第2信号導体82が設けられた外部基板8を作製できる。 The external board 8 may be, for example, an FPC. When the external substrate 8 is an FPC, a conductive metal such as a copper foil is attached to the upper and lower surfaces of a thin and soft base film having insulation such as polyimide. Then, by etching the conductive metal into a predetermined shape, the external substrate 8 provided with the second signal conductor 82 having a desired shape can be manufactured.
 外部基板8と配線基体1との接続は、外部基板8の貫通孔81に端子4を挿入し、ろう材等の接合材を介して、端子4の拡径部43と外部基板8の下面とを接続し、配線基体1の上面と外部基板8の下面とを密着させて接続する。このとき、配線基体1の上面と外部基板8の下面とがろう材等を介して接続されている。 The connection between the external substrate 8 and the wiring substrate 1 is performed by inserting the terminal 4 into the through hole 81 of the external substrate 8 and connecting the expanded diameter portion 43 of the terminal 4 and the lower surface of the external substrate 8 via a bonding material such as a brazing material. And the upper surface of the wiring substrate 1 and the lower surface of the external substrate 8 are closely contacted and connected. At this time, the upper surface of the wiring substrate 1 and the lower surface of the external substrate 8 are connected via a brazing material or the like.
 外部基板8と配線基体1との接続は、外部基板8の下面と拡径部43だけでなく、外部基板8の上面と端子4とがろう材等を介し接合されていてもよい。これによって、配線基体1と外部基板8との接合強度が上げることができる。 The connection between the external substrate 8 and the wiring substrate 1 may be made by joining not only the lower surface of the external substrate 8 and the expanded diameter portion 43 but also the upper surface of the external substrate 8 and the terminal 4 via a brazing material or the like. As a result, the bonding strength between the wiring substrate 1 and the external substrate 8 can be increased.
 外部基板8が第2信号導体82を備えている場合、第2信号導体82と、配線基体1と、をろう材等を介して電気的に接続してもよい。 When the external substrate 8 includes the second signal conductor 82, the second signal conductor 82 and the wiring base 1 may be electrically connected via a brazing material or the like.
 蓋体は、枠部11と接合されてもよい。蓋体は、下面視をした場合、例えば円形状、矩形状あるいは楕円形状であってもよい。また、蓋体は、下面視をした場合、基体2の形状と一致していてもよい。蓋体は、例えば鉄、銅、ニッケル、クロム、コバルト、モリブデンまたはタングステンを含む金属を用いてもよい。あるいは蓋体は、上述の金属の合金、例えば銅-タングステン合金、銅-モリブデン合金、鉄-ニッケル-コバルト合金等を用いてもよい。蓋体は、金属材料のインゴットに圧延加工法、打ち抜き加工法のような金属加工法を施すことによって作製できる。 The lid may be joined to the frame 11. When viewed from the bottom, the lid may have, for example, a circular shape, a rectangular shape, or an elliptical shape. Further, the lid body may match the shape of the base body 2 when viewed from below. The lid may be made of a metal containing iron, copper, nickel, chromium, cobalt, molybdenum, or tungsten, for example. Alternatively, the lid may use an alloy of the above-mentioned metals, for example, a copper-tungsten alloy, a copper-molybdenum alloy, an iron-nickel-cobalt alloy, or the like. The lid can be produced by subjecting an ingot of a metal material to a metal working method such as a rolling working method or a punching working method.
 以上、本開示は上述の実施形態に限定されるものではなく、本開示の要旨を逸脱しない範囲で種々の変更等が可能である。さらに、特許請求の範囲に属する変更等は全て本開示の範囲内のものである。 As described above, the present disclosure is not limited to the above-described embodiment, and various modifications and the like can be made without departing from the gist of the present disclosure. Furthermore, all changes and the like belonging to the claims are within the scope of the present disclosure.
1:配線基体
10:電子部品収納用パッケージ
11:枠部
100:電子装置
101:電子部品
2:基体
21:第1凹部
22:ビア
23:第1パッド
24:第2パッド
3:第1信号導体
4:端子
41:第1端
42:第2端
43:拡径部
5:接続導体
6:第1接地導体
61:第2接地導体
7:第2凹部
71:第3接地導体
8:外部基板
81:貫通孔
82:第2信号導体
1: wiring base 10: electronic component storage package 11: frame 100: electronic device 101: electronic component 2: base 21: first recess 22: via 23: first pad 24: second pad 3: first signal conductor 4: terminal 41: first end 42: second end 43: expanded portion 5: connection conductor 6: first ground conductor 61: second ground conductor 7: second recess 71: third ground conductor 8: external substrate 81 : Through hole 82: Second signal conductor

Claims (13)

  1. 上面に開口する第1凹部を有する基体と、前記上面で第1方向に延びる第1信号導体と、第1端から第2端に向かって延びる少なくとも1つの端子と、
    前記第1凹部に位置し、前記第1端に繋がる接続導体と、を備え、
    前記端子は、
    前記第1端が前記第1凹部内、前記第2端が前記第1凹部外に位置しているとともに、前記第1凹部内に拡径部を有する、配線基体。
    A base body having a first recess opening in the upper surface, a first signal conductor extending in the first direction on the upper surface, and at least one terminal extending from the first end toward the second end,
    A connection conductor located in the first recess and connected to the first end;
    The terminals are
    A wiring substrate, wherein the first end is located inside the first recess, the second end is located outside the first recess, and a diameter-expanded portion is located inside the first recess.
  2. 前記拡径部は、
    前記端子の軸を含む断面視をした場合、段状である、請求項1に記載の配線基体。
    The expanded portion is
    The wiring substrate according to claim 1, wherein the wiring substrate has a step shape when viewed in a cross-section including the axis of the terminal.
  3. 前記拡径部は、
    前記第1端から前記開口に向かって延びている、請求項1または請求項2に記載の配線基体。
    The expanded portion is
    The wiring substrate according to claim 1, which extends from the first end toward the opening.
  4. 前記拡径部の径の面積S1は、前記第1端の径の面積S2よりも大きい、請求項1または請求項2に記載の配線基体。 The wiring substrate according to claim 1 or 2, wherein a diameter area S1 of the expanded diameter portion is larger than a diameter area S2 of the first end.
  5. 前記第1凹部に、複数の前記端子が位置する、請求項1~請求項4のいずれか1つに記載の配線基体。 The wiring substrate according to any one of claims 1 to 4, wherein a plurality of the terminals are located in the first recess.
  6. 前記第1凹部を複数有し、複数の前記第1凹部のそれぞれに、前記端子が1つ位置する、請求項1~請求項4のいずれか1つに記載の配線基体。 The wiring substrate according to any one of claims 1 to 4, wherein a plurality of the first recesses are provided, and one terminal is located in each of the plurality of first recesses.
  7. 前記接続導体は、
    上面視をした場合、前記拡径部の外周を囲んで位置する、請求項1~請求項6のいずれか1つに記載の配線基体。
    The connection conductor is
    The wiring substrate according to any one of claims 1 to 6, which is located so as to surround the outer circumference of the expanded diameter portion when viewed from above.
  8. 前記第1方向に延び、前記第1信号導体を挟む一対の第1接地導体を有する、請求項1~請求項7のいずれか1つに記載の配線基体。 8. The wiring substrate according to claim 1, further comprising a pair of first ground conductors extending in the first direction and sandwiching the first signal conductor.
  9. 前記第1信号導体よりも前記上面の中心の近くに第2接地導体を有し、
    前記第2接地導体は、前記一対の第1接地導体に繋がっている、請求項8に記載の配線基体。
    A second ground conductor closer to the center of the upper surface than the first signal conductor,
    The wiring base according to claim 8, wherein the second ground conductor is connected to the pair of first ground conductors.
  10. 前記基体は、
    前記基体の外周、かつ、前記第1接地導体の先に位置する第2凹部を有する、請求項8または請求項9に記載の配線基体。
    The base is
    The wiring base according to claim 8 or 9, further comprising a second recess located on the outer periphery of the base and beyond the first ground conductor.
  11. 前記第2凹部に位置する第3接地導体を有し、
    前記第3接地導体は、
    前記第1接地導体に繋がっている、請求項10に記載の配線基体。
    A third ground conductor located in the second recess,
    The third ground conductor is
    The wiring substrate according to claim 10, which is connected to the first ground conductor.
  12. 請求項1~請求項11のいずれか1つに記載の配線基体と、
    前記上面の反対の下面に位置する枠部と、を備える電子部品収納用パッケージ。
    A wiring substrate according to any one of claims 1 to 11,
    An electronic component storage package, comprising: a frame portion located on a lower surface opposite to the upper surface.
  13. 請求項12に記載の電子部品収納用パッケージと、
    前記下面に実装された電子部品と、
    前記端子と対応する貫通孔を有する外部基板と、を備え、
    前記端子は、
    前記貫通孔に挿入されて位置する、電子装置。
    An electronic component storage package according to claim 12,
    An electronic component mounted on the lower surface,
    An external substrate having a through hole corresponding to the terminal,
    The terminals are
    An electronic device inserted into the through hole and positioned.
PCT/JP2019/050927 2018-12-26 2019-12-25 Wiring base, electronic component housing package, and electronic device WO2020138209A1 (en)

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