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WO2020134418A1 - 一种基于GaAs pHEMT工艺的中频放大器 - Google Patents

一种基于GaAs pHEMT工艺的中频放大器 Download PDF

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Publication number
WO2020134418A1
WO2020134418A1 PCT/CN2019/112625 CN2019112625W WO2020134418A1 WO 2020134418 A1 WO2020134418 A1 WO 2020134418A1 CN 2019112625 W CN2019112625 W CN 2019112625W WO 2020134418 A1 WO2020134418 A1 WO 2020134418A1
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WIPO (PCT)
Prior art keywords
resistor
capacitor
amplifier
matching unit
gate
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PCT/CN2019/112625
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English (en)
French (fr)
Inventor
蒋一帆
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南京米乐为微电子科技有限公司
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Publication of WO2020134418A1 publication Critical patent/WO2020134418A1/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G2201/00—Indexing scheme relating to subclass H03G
    • H03G2201/10—Gain control characterised by the type of controlled element
    • H03G2201/103—Gain control characterised by the type of controlled element being an amplifying element

Definitions

  • the invention relates to the technical field of amplifiers, in particular to an intermediate frequency amplifier based on GaAs pHEMT process.
  • the intermediate frequency amplifier is an indispensable part of the receiver system. After receiving the signal, the receiver system will generate an intermediate frequency signal through the low noise amplifier and the mixer.
  • the intermediate frequency signal output by the mixer is low in frequency and the signal strength is very weak, so The intermediate frequency amplifier needs to amplify the signal greatly to meet the needs of the signal processing system behind the receiver, so the gain of the intermediate frequency amplifier is its core indicator.
  • IF amplifiers are generally based on Si-based CMOS processes, and the design of such IF amplifiers is relatively mature.
  • the common components in transceiver systems such as low-noise amplifiers, driver amplifiers and power amplifiers based on Si-based CMOS processes are inferior to similar products based on GaAs pHEMT processes in terms of noise, power and linearity, especially Today, the system receiving chip presents a single-chip trend.
  • the technical problem to be solved by the present invention is to provide an intermediate frequency amplifier based on the GaAs pHEMT process, which can be integrated in the RF front-end receiving system also based on the GaAs pHEMT process to form a monolithic receiving system, which can greatly reduce the size of the system and be easy to use And improve long-term reliability.
  • the present invention provides an intermediate frequency amplifier based on the GaAs pHEMT process, which includes: an input matching unit, a cascode amplifier unit, an output matching unit and a feedback unit; an input matching unit, a cascode amplifier unit and The output matching units are connected in sequence, and the feedback unit is provided between the input matching unit and the output matching unit.
  • the lumped approach prevents the possibility of resonance far beyond the working band.
  • the input matching unit includes a first inductor L1, a first resistor R1, a second resistor R2, a third resistor R3, a first capacitor C1, a gate supply voltage Vg and a second capacitor C2; the first inductor L1 and the first The resistor R1, the first capacitor C1, and the grid power supply voltage Vg are connected in sequence and then grounded.
  • the second resistor R2 is connected in parallel between the first resistor R1 and the first capacitor C1, and one end of the third resistor R3 is connected between the first capacitor C1 and Between the gate power supply voltage Vg, the other end is connected to the second capacitor C2 and then grounded.
  • the cascode amplifying unit includes a first cascode amplifying transistor PHEMT1, a second cascode amplifying transistor PHEMT2, a second inductance L2, a fourth resistor R4 and a third capacitor C3; the first cascode amplifying transistor
  • the source of PHEMT1 is directly grounded, the drain of the first common source amplifier PHEMT1 is connected to the second inductor L2 and then connected to the drain of the second common gate amplifier PHEMT2, the fourth resistor R4 is connected to the third capacitor C3, one end It is connected between the second inductor L2 and the drain of the second common-gate amplifying transistor PHEMT2, and the other end is directly grounded.
  • the output matching unit includes a fifth resistor R5, a sixth resistor R6, a fourth capacitor C4 and a fifth capacitor C5; the fifth resistor R5 and the fourth capacitor C4 are connected, and one end is connected to the second common-gate amplifier transistor PHEMT2 The other end of the gate is directly grounded; the sixth resistor R6 is connected to the fifth capacitor C5, one end is connected between the source of the second common-gate amplifier transistor PHEMT2 and the signal output, and the other end is directly grounded.
  • the feedback unit includes a ninth resistor R9, a sixth capacitor C6 and a third inductor L3; the ninth resistor R9, the sixth capacitor C6 and the third inductor L3 are sequentially connected, and one end is connected to the first inductor L1 and the first common source Between the gate of the stage amplifier transistor PHEMT1, the other end is connected between the source of the second common-gate amplifier transistor PHEMT2 and the sixth resistor R6.
  • a voltage dividing unit including a seventh resistor R7 and an eighth resistor R8; the seventh resistor R7 and the eighth resistor R8 are connected in series, one end is directly grounded, and the other end is connected to the source of the second common-gate amplifier transistor PHEMT2 Very connected.
  • the intermediate frequency amplifier of the present invention can achieve a high gain of >24dB in the frequency band of 30MHz-200MHz; it achieves absolute stability in the entire microwave radio frequency band without the need to add additional off-chip stability circuits, which simplifies the layout; in the 30MHz-200MHz
  • the noise figure of ⁇ 1.5dB is realized in the frequency band; the size is only 1000um*800um, which is very convenient to be integrated in the system or cascaded with the same unit.
  • FIG. 1 is a schematic structural view of the present invention.
  • FIG. 2 is a schematic diagram of gain characteristics of the intermediate frequency amplifier of the present invention.
  • FIG. 3 is a schematic diagram of noise characteristics of the intermediate frequency amplifier of the present invention.
  • an intermediate frequency amplifier based on the GaAs pHEMT process includes: an input matching unit, a cascode amplifier unit, an output matching unit and a feedback unit; an input matching unit, a cascode amplifier unit and an output matching unit Connected in turn, the feedback unit is set between the input matching unit and the output matching unit.
  • the input matching unit includes a first inductor L1, a first resistor R1, a second resistor R2, a third resistor R3, a first capacitor C1, a gate supply voltage Vg, and a second capacitor C2; the first inductor L1 and the first resistor R1
  • the first capacitor C1 and the grid power supply voltage Vg are sequentially connected to the ground, the second resistor R2 is connected in parallel between the first resistor R1 and the first capacitor C1, and the third resistor R3 is connected between the first capacitor C1 and the grid power supply Between the voltage Vg, the other end is connected to the second capacitor C2 and then grounded.
  • the input matching unit can filter out high frequency clutter and ensure that the amplifier is in an absolutely stable state in the entire frequency band.
  • the cascode amplifier unit includes a first cascode amplifier transistor PHEMT1, a second cascode amplifier transistor PHEMT2, a second inductor L2, a fourth resistor R4 and a third capacitor C3; the source of the first cascode amplifier transistor PHEMT1 The pole is directly grounded, the drain of the first common source amplifier transistor PHEMT1 is connected to the second inductor L2 and then connected to the drain of the second common gate amplifier transistor PHEMT2, the fourth resistor R4 is connected to the third capacitor C3, and one end is connected to the Between the second inductor L2 and the drain of the second common-gate amplifier transistor PHEMT2, the other end is directly grounded.
  • the main function of the second inductor L2 is to match the output impedance of the first common source amplifier transistor PHEMT1 and the input impedance of the second common gate amplifier transistor PHEMT2, and the function of the fourth resistor R4 and the third capacitor C3 is to remove high frequency noise To ensure the stability of the amplifier.
  • the output matching unit includes a fifth resistor R5, a sixth resistor R6, a fourth capacitor C4, and a fifth capacitor C5; the fifth resistor R5 and the fourth capacitor C4 are connected, and one end is connected to the gate of the second common-gate amplifier transistor PHEMT2, The other end is directly grounded; the sixth resistor R6 is connected to the fifth capacitor C5, one end is connected between the source of the second common-gate amplifier transistor PHEMT2 and the signal output, and the other end is directly grounded.
  • the output matching unit suppresses out-of-band clutter as much as possible to ensure signal integrity.
  • the feedback unit includes a ninth resistor R9, a sixth capacitor C6, and a third inductor L3; a ninth resistor R9, a sixth capacitor C6, and a third inductor L3 are connected in sequence, and one end is connected to the first inductor L1 and the first common source amplifier transistor Between the gate of PHEMT1, the other end is connected between the source of the second common-gate amplifier transistor PHEMT2 and the sixth resistor R6.
  • the feedback unit guarantees in-band gain while achieving low noise at low frequencies to ensure the purity of the signal.
  • a voltage dividing unit is also provided, including a seventh resistor R7 and an eighth resistor R8; the seventh resistor R7 and the eighth resistor R8 are connected in series, one end is directly grounded, and the other end is connected to the source of the second common-gate amplifier transistor PHEMT2.
  • the voltage dividing unit is used to provide a bias voltage to PHEMT2.
  • the IF amplifier works in the low frequency range of 30MHz-200MHz, so the DC blocking capacitor and choke inductor need to be placed off-chip.
  • FIG. 2 it is a schematic diagram of the gain characteristics of the intermediate frequency amplifier.
  • the abscissa is the frequency and the unit is MHz; the ordinate is the gain and the unit is dB. It can be seen that in the frequency range of 30MHz-200MHz, the gain of the intermediate frequency amplifier is >24dB.
  • FIG. 3 it is a schematic diagram of the noise characteristics of the intermediate frequency amplifier.
  • the abscissa is the frequency and the unit is MHz; the ordinate is the noise and the unit is dB. It can be seen that in the frequency range of 30MHz-200MHz, the noise of the intermediate frequency amplifier is ⁇ 1.5dB.
  • the left side of the circuit is the signal input port, and the signal enters the amplifier through the external DC blocking capacitor.
  • the first common source amplifier transistor PHEMT1 is the input matching part before, the main function is to optimize the standing wave while ensuring the absolute stability of the amplifier;
  • the first common source amplifying transistor PHEMT1 and the second common gate amplifying transistor PHEMT2 form a common source cascode amplifying core, which provides the gain of the amplifier; and a series is formed by a series connection of a ninth resistor R9, a sixth capacitor C6 and a third inductor L3
  • the right side of the second cascode amplifier PHEMT2 is the output matching circuit and the sub
  • the voltage circuit and the intermediate frequency amplifier have two power supplies, namely VD and VG, which are used to provide the DC bias points of the two tubes PHEMT1 and PHEMT

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

本发明公开了一种基于GaAs pHEMT工艺的中频放大器，包括：输入匹配单元、共源共栅放大单元、输出匹配单元和反馈单元；输入匹配单元、共源共栅放大单元和输出匹配单元依次相连，反馈单元设置在输入匹配单元和输出匹配单元之间，利用集总的方式防止了远超工作带外的谐振可能性。本发明的中频放大器可以在30MHz-200MHz的频段内实现>24dB的高增益；在整个微波射频频段内实现绝对稳定，而不需要添加额外片外稳定电路，简化了布版；在30MHz-200MHz的频段内实现<1.5dB的噪声系数；尺寸仅为1000um*800um，非常方便集成在系统中或者相同单元级联使用。

Description

一种基于GaAs pHEMT工艺的中频放大器 技术领域
本发明涉及放大器技术领域，尤其是一种基于GaAs pHEMT工艺的中频放大器。
 背景技术
中频放大器是接收机系统中不可或缺的一部分，接收机系统收到信号后经过低噪声放大器和混频器会产生中频信号，混频器输出的中频信号频率较低并且信号强度很弱，因此需要中频放大器对信号进行大幅度的放大，以满足接收机后面信号处理系统的需求，因此中频放大器的增益是其核心指标。
传统的中频放大器一般基于Si基CMOS工艺制作，这类中频放大器的设计也比较成熟。但是基于Si基CMOS工艺制作的低噪声放大器、驱动放大器和功率放大器等收发系统中的常用组件在噪声、功率和线性度等指标性能上比基于GaAs pHEMT工艺的同类产品要逊色不少，尤其是在系统接收芯片呈现单片化趋势的今天。我们需要在GaAs pHEMT工艺上实现单片接收机系统，因此基于GaAs pHEMT工艺的中频放大器的设计是很有必要的。
 技术问题
本发明所要解决的技术问题在于，提供一种基于GaAs pHEMT工艺的中频放大器，能够集成在同样基于GaAs pHEMT工艺的射频前端接收系统中，形成单片接收系统，可以大大减小系统体积，便于使用且提高长期可靠性能。
 技术解决方案
为解决上述技术问题，本发明提供一种基于GaAs pHEMT工艺的中频放大器，包括：输入匹配单元、共源共栅放大单元、输出匹配单元和反馈单元；输入匹配单元、共源共栅放大单元和输出匹配单元依次相连，反馈单元设置在输入匹配单元和输出匹配单元之间，利用集总的方式防止了远超工作带外的谐振可能性。
优选的，输入匹配单元包括第一电感L1、第一电阻R1、第二电阻R2、第三电阻R3、第一电容C1、栅级供电电压Vg和第二电容C2；第一电感L1与第一电阻R1、第一电容C1、栅级供电电压Vg依次相连后接地，第二电阻R2并联在第一电阻R1和第一电容C1的两端，第三电阻R3的一端连接在第一电容C1与栅级供电电压Vg之间，另一端连接第二电容C2后接地。
优选的，共源共栅放大单元包括第一共源级放大晶体管PHEMT1、第二共栅级放大晶体管PHEMT2、第二电感L2、第四电阻R4和第三电容C3；第一共源级放大晶体管PHEMT1的源极直接接地，第一共源级放大晶体管PHEMT1的漏极连接第二电感L2后连接到第二共栅级放大晶体管PHEMT2的漏极，第四电阻R4与第三电容C3相连，一端连接在第二电感L2与第二共栅级放大晶体管PHEMT2的漏极的之间，另一端直接接地。
优选的，输出匹配单元包括第五电阻R5、第六电阻R6、第四电容C4和第五电容C5；第五电阻R5和第四电容C4相连，一端连接到第二共栅级放大晶体管PHEMT2的栅极，另一端直接接地；第六电阻R6和第五电容C5相连，一端连接到第二共栅级放大晶体管PHEMT2的源极与信号输出之间，另一端直接接地。
优选的，反馈单元包括第九电阻R9、第六电容C6和第三电感L3；第九电阻R9、第六电容C6和第三电感L3依次相连，一端连接在第一电感L1与第一共源级放大晶体管PHEMT1的栅极之间，另一端连接在第二共栅级放大晶体管PHEMT2的源极与第六电阻R6之间。
优选的，还设置有分压单元，包括第七电阻R7和第八电阻R8；第七电阻R7和第八电阻R8相串联，一端直接接地，另一端与第二共栅级放大晶体管PHEMT2的源极相连。
有益效果
本发明的中频放大器可以在30MHz-200MHz的频段内实现>24dB的高增益；在整个微波射频频段内实现绝对稳定，而不需要添加额外片外稳定电路，简化了布版；在30MHz-200MHz的频段内实现<1.5dB的噪声系数；尺寸仅为1000um*800um，非常方便集成在系统中或者相同单元级联使用。
 附图说明
[0006] 图1为本发明的结构示意图。
图2为本发明的中频放大器的增益特性示意图。
图3为本发明的中频放大器的噪声特性示意图。
 本发明的实施方式
如图1所示，一种基于GaAs pHEMT工艺的中频放大器，包括：输入匹配单元、共源共栅放大单元、输出匹配单元和反馈单元；输入匹配单元、共源共栅放大单元和输出匹配单元依次相连，反馈单元设置在输入匹配单元和输出匹配单元之间。
输入匹配单元包括第一电感L1、第一电阻R1、第二电阻R2、第三电阻R3、第一电容C1、栅级供电电压Vg和第二电容C2；第一电感L1与第一电阻R1、第一电容C1、栅级供电电压Vg依次相连后接地，第二电阻R2并联在第一电阻R1和第一电容C1的两端，第三电阻R3的一端连接在第一电容C1与栅级供电电压Vg之间，另一端连接第二电容C2后接地。输入匹配单元可以滤除高频杂波并保证全频带内放大器处于绝对稳定状态。
共源共栅放大单元包括第一共源级放大晶体管PHEMT1、第二共栅级放大晶体管PHEMT2、第二电感L2、第四电阻R4和第三电容C3；第一共源级放大晶体管PHEMT1的源极直接接地，第一共源级放大晶体管PHEMT1的漏极连接第二电感L2后连接到第二共栅级放大晶体管PHEMT2的漏极，第四电阻R4与第三电容C3相连，一端连接在第二电感L2与第二共栅级放大晶体管PHEMT2的漏极的之间，另一端直接接地。第二电感L2的主要作用是匹配第一共源级放大晶体管PHEMT1的输出阻抗和第二共栅级放大晶体管PHEMT2的输入阻抗，第四电阻R4和第三电容C3的作用是去除高频杂波，保证放大器稳定。
输出匹配单元包括第五电阻R5、第六电阻R6、第四电容C4和第五电容C5；第五电阻R5和第四电容C4相连，一端连接到第二共栅级放大晶体管PHEMT2的栅极，另一端直接接地；第六电阻R6和第五电容C5相连，一端连接到第二共栅级放大晶体管PHEMT2的源极与信号输出之间，另一端直接接地。在保证工作频段的性能前提下，输出匹配单元尽量压制带外杂波，保证信号的完整性。
反馈单元包括第九电阻R9、第六电容C6和第三电感L3；第九电阻R9、第六电容C6和第三电感L3依次相连，一端连接在第一电感L1与第一共源级放大晶体管PHEMT1的栅极之间，另一端连接在第二共栅级放大晶体管PHEMT2的源极与第六电阻R6之间。反馈单元保证带内增益的同时在低频实现较低的噪声，以保证信号的纯净度。
还设置有分压单元，包括第七电阻R7和第八电阻R8；第七电阻R7和第八电阻R8相串联，一端直接接地，另一端与第二共栅级放大晶体管PHEMT2的源极相连。分压单元用于给PHEMT2提供偏置电压。
中频放大器工作在30MHz-200MHz的低频区域，因此隔直电容和扼流电感需要在片外放置。
如图2所示，为中频放大器的增益特性示意图。其中，横坐标为频率，单位是MHz；纵坐标为增益，单位是dB，可见在30MHz-200MHz的频率范围内，中频放大器的增益>24dB。
如图3所示，为中频放大器的噪声特性示意图。其中，横坐标为频率，单位是MHz；纵坐标为噪声，单位是dB，可见在30MHz-200MHz的频率范围内，中频放大器的噪声<1.5dB。
本发明中，电路的左侧为信号输入端口，信号经过外部隔直电容进入放大器内部，第一共源级放大晶体管PHEMT1之前为输入匹配部分，主要作用是优化驻波的同时保证放大器绝对稳定；第一共源级放大晶体管PHEMT1与第二共栅级放大晶体管PHEMT2组成共源共栅放大核心，提供放大器的增益；并且通过第九电阻R9、第六电容C6和第三电感L3串联来组成第二共栅级放大晶体管PHEMT2到第一共源级放大晶体管PHEMT1的信号负反馈链路，来保证增益的平坦度和低频噪声特性；第二共栅级放大晶体管PHEMT2右侧为输出匹配电路及分压电路，中频放大器有两个供电，分别是VD和VG，用于提供两个管子PHEMT1和PHEMT2的直流偏置点。同样的，输出端需要外部扼流电感和输出外部隔直来保证直流信号馈入电路的同时保证信号正常输出。

Claims (6)

  1. 一种基于GaAs pHEMT工艺的中频放大器，其特征在于，包括：输入匹配单元、共源共栅放大单元、输出匹配单元和反馈单元；输入匹配单元、共源共栅放大单元和输出匹配单元依次相连，反馈单元设置在输入匹配单元和输出匹配单元之间。
  2. 如权利要求1所述的基于GaAs pHEMT工艺的中频放大器，其特征在于，输入匹配单元包括第一电感L1、第一电阻R1、第二电阻R2、第三电阻R3、第一电容C1、栅级供电电压Vg和第二电容C2；第一电感L1与第一电阻R1、第一电容C1、栅级供电电压Vg依次相连后接地，第二电阻R2并联在第一电阻R1和第一电容C1的两端，第三电阻R3的一端连接在第一电容C1与栅级供电电压Vg之间，另一端连接第二电容C2后接地。
  3. 如权利要求1所述的基于GaAs pHEMT工艺的中频放大器，其特征在于，共源共栅放大单元包括第一共源级放大晶体管PHEMT1、第二共栅级放大晶体管PHEMT2、第二电感L2、第四电阻R4和第三电容C3；第一共源级放大晶体管PHEMT1的源极直接接地，第一共源级放大晶体管PHEMT1的漏极连接第二电感L2后连接到第二共栅级放大晶体管PHEMT2的漏极，第四电阻R4与第三电容C3相连，一端连接在第二电感L2与第二共栅级放大晶体管PHEMT2的漏极的之间，另一端直接接地。
  4. 如权利要求1所述的基于GaAs pHEMT工艺的中频放大器，其特征在于，输出匹配单元包括第五电阻R5、第六电阻R6、第四电容C4和第五电容C5；第五电阻R5和第四电容C4相连，一端连接到第二共栅级放大晶体管PHEMT2的栅极，另一端直接接地；第六电阻R6和第五电容C5相连，一端连接到第二共栅级放大晶体管PHEMT2的源极与信号输出之间，另一端直接接地。
  5. 如权利要求1所述的基于GaAs pHEMT工艺的中频放大器，其特征在于，反馈单元包括第九电阻R9、第六电容C6和第三电感L3；第九电阻R9、第六电容C6和第三电感L3依次相连，一端连接在第一电感L1与第一共源级放大晶体管PHEMT1的栅极之间，另一端连接在第二共栅级放大晶体管PHEMT2的源极与第六电阻R6之间。
  6. 如权利要求1所述的基于GaAs pHEMT工艺的中频放大器，其特征在于，还设置有分压单元，包括第七电阻R7和第八电阻R8；第七电阻R7和第八电阻R8相串联，一端直接接地，另一端与第二共栅级放大晶体管PHEMT2的源极相连。
PCT/CN2019/112625 2018-11-30 2019-10-22 一种基于GaAs pHEMT工艺的中频放大器 WO2020134418A1 (zh)

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