WO2020038408A1

WO2020038408A1 - Optical sensor, optical sensing system and manufacturing method of optical sensor

Info

Publication number: WO2020038408A1
Application number: PCT/CN2019/101805
Authority: WO
Inventors: 范成至; 黄振昌; 傅同龙; 黄郁湘
Original assignee: 神盾股份有限公司
Priority date: 2018-08-21
Filing date: 2019-08-21
Publication date: 2020-02-27
Also published as: CN110473887A; CN210349840U; CN211045441U

Abstract

An optical sensor (1-200, 2-200, 2-200'), an optical sensing system (1-600, 2-100) and a manufacturing method of the optical sensor. The optical sensor (1-200, 2-200, 2-200') comprises: a substrate (1-201) having multiple sensing pixels (1-203, 1-203', 1-203M, 2-203, 2-203A, 2-203B, 2-203C) arranged in an array; a first transparent dielectric layer (1-207, 2-206) positioned above the substrate (1-201); and multiple micro-lenses (1-210, 2-210, 2-210A, 2-210B, 2-210C) arranged in an array and positioned at or above the first transparent dielectric layer (1-207, 2-206). The micro-lenses (1-210, 2-210, 2-210A, 2-210B, 2-210C) respectively cause multiple parallel normal incident light rays, which enter the micro-lenses (1-210, 2-210, 2-210A, 2-210B, 2-210C) from an external environment, to pass through the first transparent dielectric layer (1-207, 2-206) and enter the interior of all or part of the sensing pixels (1-203, 1-203', 1-203M, 2-203, 2-203A, 2-203B, 2-203C), and further cause multiple parallel obliquely incident light rays, which enter the micro-lenses (1-210, 2-210, 2-210A, 2-210B, 2-210C) from the external environment, to be incident at the exterior of all or part of the sensing pixels (1-203, 1-203', 1-203M, 2-203, 2-203A, 2-203B, 2-203C), so as to obtain an image of a target object (1-F, 2-F). The target object (1-F, 2-F) generates parallel normal incident light rays and parallel obliquely incident light rays. The normal incident light rays are parallel to multiple optical axes of the micro-lenses. The respective obliquely incident light rays and the respective optical axes form angles therebetween. Also provided are an optical sensing system (1-600, 2-100) using the optical sensor (1-200, 2-200, 2-200') and a manufacturing method of the optical sensor (1-200, 2-200, 2-200').

Description

Optical sensor, optical sensing system and manufacturing method thereof

Technical field

The invention relates to an optical sensor (sensor), an optical sensing system and a manufacturing method thereof, in particular to an optical sensor with a controllable angle collimation structure (Angle Controllable Collimator), and an optical device using the optical sensor. Sensing system and manufacturing method thereof.

Background technique

Today's mobile electronic devices (such as mobile phones, tablets, laptops, etc.) are often equipped with user biometric systems, including different technologies such as fingerprints, face shapes, irises, etc., to protect personal data, such as those used in mobile phones Portable devices, such as smart watches, also have the function of mobile payment, which has become a standard function for users' biometrics, and the development of portable devices such as mobile phones is toward the full screen (or ultra-narrow bezel). ) Trend, making traditional capacitive fingerprint keys (such as the keys from iPhone 5 to iPhone 8) can no longer be used, and then evolved new miniaturized optical imaging devices (very similar to traditional camera modules, with complementary metal oxides) Semiconductor (Complementary Metal-Oxide Semiconductor (CMOS) Image Sensor (CIS) sensor element and optical lens module). The miniaturized optical imaging device is set under the screen (may be called under the screen), and through the part of the screen to transmit light (especially the Organic Light Emitting Diode (OLED) screen), you can capture the object pressed on the screen Images, especially fingerprint images, can be referred to as Fingerprint On Display (FOD).

This known miniaturized optical imaging device is designed as a module with a thickness greater than 3mm, and in order to match the user's habit of pressing the position, the position of the module will overlap with the area of some cell phone batteries, so the battery must be reduced The size is set to allow the space to set the miniaturized optical imaging device. For this reason, the mobile phone battery cannot have a long use time. And because the new 5G mobile phones will consume more power in the future, they will care about the use of batteries.

Therefore, how to provide an ultra-thin optical imaging device, especially without sacrificing the space of the battery, and can be arranged in an ultra-narrow area (<0.5 mm) between the battery and the screen, is the focus of the present invention.

Summary of the Invention

An object of the present invention is to provide an optical sensor with a controllable angle collimation structure, and an optical sensing system using the optical sensor and a manufacturing method thereof, so as to eliminate unnecessary stray light and effectively reduce the optical sensor's The thickness makes it easy to apply to optical sensing systems.

In order to achieve the above object, an embodiment of the present invention provides an optical sensor including: a substrate having a plurality of sensing pixels arranged in an array; a first transparent dielectric layer located above the substrate; and a plurality of microlenses, Arranged in an array and located on or above the first transparent medium layer, where the microlenses respectively enter a plurality of parallel forward incident light entering the microlenses from the outside into the sensors through the first transparent medium layer Part or all of the total number of pixels is inside, and a plurality of parallel oblique incident light entering the microlenses from the outside are incident on part or all of the total number of these sensing pixels, thereby sensing a target object. image. The target generates the parallel normal incident light and the parallel oblique incident light. The normal incident light is parallel to the multiple optical axes of the microlenses. Each oblique incident light and each optical axis are sandwiched by one. angle.

An embodiment of the present invention further provides an optical sensor, including: a substrate having a plurality of sensing pixels arranged in an array; a first transparent dielectric layer located above the substrate; and a plurality of offset microlenses arranged in an array An array and located on or above the first transparent dielectric layer. These offset microlenses respectively enter a plurality of parallel forward incident light entering the offset microlenses from the outside through a first transparent medium layer and incident on part or all of the total number of these sensing pixels, and A plurality of parallel obliquely incident light entering the offset microlenses from the outside is incident on part or all of the total number of these sensing pixels, thereby sensing an image of a target, and the target generates these The parallel forward incident light and the parallel oblique incident light are parallel to the optical axes of the offset microlenses, and each oblique incident light forms an angle with each optical axis.

An embodiment of the present invention further provides an optical sensing system including: a base; a battery disposed on the base; a frame disposed above the battery; an optical sensor for sensing an image of a target object A display for displaying information, wherein an optical sensor is mounted on the frame or attached to the lower surface of the display, the target is located on or above the display, the optical sensor senses the image of the target through the display, and the battery powers the optical sensor and monitor.

An embodiment of the present invention further provides a method for manufacturing an optical sensor, including the following steps: providing a substrate having a plurality of sensing pixels arranged in an array; forming a first transparent dielectric layer on the substrate; and A plurality of microlenses are formed on or above the transparent medium layer and arranged in an array. These micro-lenses respectively enter a plurality of parallel forward incident light entering the micro-lenses from the outside through a first transparent medium layer and enter a part or all of the total number of these sensing pixels, and will enter these micro-lenses from the outside. Multiple parallel oblique incident lights of the lens are incident on part or all of the total number of these sensing pixels, thereby sensing an image of a target, and the target generates these parallel normal incident light and these The parallel obliquely incident light is parallel to the multiple optical axes of the microlenses, and each obliquely incident light forms an angle with each optical axis.

An embodiment of the present invention further provides a method for manufacturing an optical sensor, including the following steps: providing a substrate having a plurality of sensing pixels arranged in an array; forming a first transparent dielectric layer on the substrate; and A plurality of offset microlenses are formed on or above the transparent medium layer and arranged in an array. These offset microlenses respectively enter a plurality of parallel forward incident light entering the offset microlenses from the outside through a first transparent medium layer and incident on part or all of the total number of these sensing pixels, and A plurality of parallel obliquely incident light entering the offset microlenses from the outside is incident on part or all of the total number of these sensing pixels, thereby sensing an image of a target, and the target generates these The parallel forward incident light and the parallel oblique incident light are parallel to the optical axes of the offset microlenses, and each oblique incident light forms an angle with each optical axis.

Some embodiments of the present invention provide an optical sensor including: a substrate, a first light-shielding layer, a microlens layer, and a first transparent dielectric layer. This substrate contains an array of sensing pixels. The first light-shielding layer is located above the sensing pixel array and has a plurality of first openings, wherein the first openings expose a plurality of sensing pixels of the sensing pixel array. The microlens layer is located above the first light-shielding layer and includes a plurality of microlenses. The first transparent medium layer is located above the sensing pixel array and between the micro lens layer and the sensing pixel array, wherein the first transparent medium layer has a first thickness. The microlens layer is used to guide incident light through the first transparent medium layer to the sensing pixels under the first openings.

Some embodiments of the present invention provide an optical sensor including: a substrate, a first transparent dielectric layer, and a microlens layer. The substrate includes a sensing pixel array, wherein the sensing pixel array includes a plurality of sensing pixels, and each of the sensing pixels has a pixel size. The first transparent medium layer is located above the sensing pixel array. The microlens layer is located above the first transparent medium layer and includes a plurality of microlenses, each of which has a diameter, wherein the microlenses are used to guide incident light through the first transparent medium layer to the transmission Sense pixels. The pixel size is in the range of 3 to 10 microns, and the diameter is in the range of 10 to 50 microns.

According to the above embodiments, by designing the light-shielding layer, microlenses, and sensing pixels of the optical sensor, the sensing pixels can be made to receive light from a specific incident angle range, eliminating unnecessary stray light, and effectively reducing the optical sensor The thickness of the optical sensor can easily be placed between the battery of the electronic device such as a mobile phone and the display, and the light source of the display can be used to realize the optical sensing under the screen.

In order to make the above content of the present invention more comprehensible, preferred embodiments are described below in detail with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale and are for illustration purposes only. In fact, it is possible to arbitrarily enlarge or reduce the size of the element to clearly show the characteristics of the embodiment of the present invention.

FIG. 1 is a schematic cross-sectional view of an optical sensing system according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of an optical sensor according to a first embodiment of the present invention.

FIG. 3 is a characteristic diagram of an optical sensor according to a first embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view of an optical sensing system according to a second embodiment of the present invention.

FIG. 5 is a schematic diagram showing an operating state of the optical sensor according to the first embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of an optical sensor according to a third embodiment of the present invention.

FIG. 7 shows a characteristic curve of an optical sensor according to a third embodiment of the present invention.

FIG. 8 is a schematic diagram showing another working state of the optical sensor according to the first embodiment of the present invention.

FIG. 9 is a schematic cross-sectional view of an optical sensor according to a fourth embodiment of the present invention.

FIG. 10 shows a characteristic curve of the optical sensor of FIG. 8.

FIG. 11 shows a characteristic graph of the optical sensor of FIG. 9.

FIG. 12 is a schematic partial cross-sectional view illustrating an operating principle of an optical sensor according to a fourth embodiment of the present invention.

13 is a schematic cross-sectional view of an optical sensor according to a fifth embodiment of the present invention.

FIG. 14 is a schematic partial cross-sectional view of an optical sensor according to a sixth embodiment of the present invention.

FIG. 15 shows a characteristic curve of the optical sensor of FIG. 14.

16A and 16B are schematic partial cross-sectional views showing two examples of an optical sensor according to a seventh embodiment of the present invention.

17A to 17E are schematic cross-sectional views showing the steps of a method for manufacturing an optical sensor according to an eighth embodiment of the present invention.

18A to 18F are schematic cross-sectional views showing the steps of a method for manufacturing an optical sensor according to a ninth embodiment of the present invention.

19A to 19F are schematic cross-sectional views showing the steps of a method for manufacturing an optical sensor according to a tenth embodiment of the present invention.

FIG. 20 is a schematic cross-sectional view showing a structure of an optical sensor according to a modification of the eighth embodiment of the present invention.

FIG. 21 is a schematic cross-sectional view showing a structure of an optical sensor according to a modified example of the tenth embodiment of the present invention.

FIG. 22 is a schematic diagram illustrating sensing an object by an optical sensing system according to some embodiments of the present invention.

FIG. 23 is a schematic diagram illustrating an exemplary structure of an optical sensing system sensing a target object according to some embodiments of the present invention.

24 to 26B are schematic cross-sectional views illustrating optical sensors at various stages of a process according to some embodiments of the present invention.

27A to 27F are schematic cross-sectional views illustrating an optical sensor according to some embodiments of the present invention.

28A to 28C are schematic cross-sectional views illustrating an optical sensor according to another embodiment of the present invention.

29 to 32 are schematic cross-sectional views illustrating an optical sensor including an additional structure according to some other embodiments of the present invention.

33 is a schematic cross-sectional view of an optical sensing system including an exemplary structure of a display according to some embodiments of the present invention.

34 to 35 are schematic cross-sectional views illustrating optical sensing systems including different packaging structures according to some other embodiments of the present invention.

FIG. 36 is a schematic diagram illustrating an optical sensing system receiving incident light according to some embodiments of the present invention.

37 to 38 are schematic cross-sectional views illustrating optical sensors at various stages of a process according to other embodiments of the present invention.

39A to 39B are schematic cross-sectional views illustrating a configuration of a microlens according to other embodiments of the present invention.

FIG. 40 is a partially enlarged schematic diagram illustrating a cross section of a configuration of a microlens and a sensing pixel according to other embodiments of the present invention.

The reference signs are explained as follows:

1-ANG ～ angle

1-ANG2 ～ second angle

1-CR ～ Area to be measured

1-CV1 ～ Curve

1-CV2 ～ Curve

1-d, H, h ～ distance

1-F ～ Target

1-G ～ clearance

1-L1 ～ forward incident light

1-L1 '～ forward incident light

1-L2 ～ inclined incident light

1-L3 ～ second oblique incident light

1-L4 ～ third oblique incident light

1-L5 ～ fourth oblique incident light

1-OA ～ optical axis

1-OAA ～ optical axis

1-OAM ～ target optical axis

1-SR ～ area

1-203, 1-203 ', 1-203M-sensing pixels

1-200 ～ optical sensor

1-201 ～ Board

1-202 ～ Dielectric layer group

1-204 ～ first light-shielding layer

1-204A ～ first light hole

1-205 ～ Protective layer

1-206 ～ Optical filter layer

1-207 ～ first transparent dielectric layer

1-208 ～ Second light-shielding layer

1-208A ～ second light hole

1-209 ～ second transparent dielectric layer

1-210 ～ Micro lens

1-210A ～ Offset micro lens

1-210B ～ bottom surface

1-210M ～ target micro lens

1-211 ～ Lens shading layer

1-300 ～ display

1-300B ～ lower surface

1-400 ～ frame

1-410 ～ receiving slot

1-420 ～ Accommodation bottom

1-500 ～ battery

1-600 ～ optical sensing system

1-610 ～ base

1-900 ～ optical filter board

1-1300 ～ Optical sensor module

1-1301 ～ carrying hard version

1-1302 ～ Flexible circuit board

1-1303 ～ Welding wire

1-1305 ～ frame

1-1306 ～ sealing layer

A1, A2 ～ Aperture

X ～ Pitch

2-100 ～ optical sensing system

2-101 ～ cover layer

2-200, 2-200 ’～ optical sensor

2-300 ～ display

2-201 ～ Base

2-202 ～ sensor pixel array

2-203, 2-203A, 2-203B, 2-203C ～ sensor pixels

2-204 ～ First light-shielding layer

2-205, 2-205A, 2-205B, 2-205C ～ first opening

2-206 ～ First transparent dielectric layer

2-206A, 2-206B ～ first transparent medium sublayer

2-207 ～ Second light-shielding layer

2-208 ～ Second opening

2-209 ～ Micro lens layer

2-210, 2-210A, 2-210B, 2-210C ～ microlenses

2-800 ～ protective layer

2-900 ～ filter layer

2-1001 ～ second transparent dielectric layer

2-1002 ～ third light shielding layer

2-1003 ～ the third opening

2-1201 ～ First light transmitting material

2-1202 ～ Thin film transistor layer

2-1203 ～ cathode layer

2-1204 ～ Light emitting layer

2-1205 ～ Anode layer

2-1206 ～ Second transparent material

2-1207 ～ polarizing plate

2-1208 ～ Adhesive layer

2-1209 ～ Transparent cover

2-1210 ～ aperture

2-1301 ～ Conductive pad

2-1302 ～ Wire

2-1303 ～ Circuit board

2-1304 ～ Reinforcing board

2-1305, 2-1401 ～ frame

2-1402 ～ Adhesive material

2-1403 ～ Adhesive layer

2-1601 ～ Circuit structure

2-C, 2-C1, 2-C2, 2-C3, 2-C1A, 2-C2A, 2-C1C, 2-C2C to center line

2-CR ～ target contact area

2-F ～ target

2-F1 ～ Protrusion

2-F2 ～ concave

2-L1, 2-L2, 2-L3 ～ light

2-S, 2-S1, 2-S2 ～ lateral shift distance

2-SR ～ Optical sensing area

2-T _A , 2-T _B ～ thickness

A1 ’～ first aperture

A2 ’～ Second Aperture

D ～ diameter

f ～ focal length

L ～ incident light

n ～ refractive index

P ～ Width

R ～ curvature radius

T ～ thickness θ, θ ’～ main angle

θ1, θ2 ～ tolerance

θ _i ～ incident angle

θ _r ～ refraction angle

detailed description

The following disclosure provides many embodiments or examples, and specific examples of each element and its configuration are described below to simplify the description of the embodiments of the present invention. Of course, these are merely examples and are not intended to limit the embodiments of the present invention. For example, if the description mentions that the first element is formed on the second element, it may include an embodiment where the first and second elements are in direct contact, or it may include an additional element formed between the first and second elements. So that they are not in direct contact with the embodiment. In addition, embodiments of the present invention may repeat reference numbers and / or letters in different examples. This repetition is for brevity and clarity and is not intended to represent the relationship between the different embodiments discussed.

In addition, space-relative terms such as "below", "below", "lower", "above", "higher" and similar terms may be used. It is convenient to describe the relationship between one or more elements or features in the illustration and other elements or features. These spatial relative terms include different orientations of the device in use or operation, as well as the description in the drawings. Direction. When the device is turned to different orientations (rotated 90 degrees or other orientations), the spatially relative adjectives used in it will also be interpreted according to the orientation after turning.

Here, the terms "about", "approximately", and "mostly" generally indicate within a given value or range within 20%, preferably within 10%, and preferably within 5%, or 3% Within, or within 2%, or within 1%, or within 0.5%. It should be noted that the quantity provided in the description is an approximate quantity, that is, without “about”, “approximately”, or “mostly” specified, “about”, “about”, “about” "Maybe".

Although the steps in some of the embodiments described are performed in a particular order, these steps may also be performed in other logical orders. In different embodiments, some of the steps described may be replaced or omitted, and some other operations may be performed before, during, and / or after the steps described in the embodiments of the present invention. The optical sensor and the optical sensing system in the embodiments of the present invention may add other features. In different embodiments, some features may be replaced or omitted.

[First group of embodiments]

FIG. 1 is a schematic cross-sectional view of an optical sensing system according to a first embodiment of the present invention. FIG. 2 is a schematic cross-sectional view of an optical sensor according to a first embodiment of the present invention. As shown in FIGS. 1 and 2, an optical sensing system 1-600 in this embodiment, such as an electronic device of a mobile phone or a tablet computer, includes a base 1-610, a battery 1-500, and a frame 1-400. An optical sensor 1-200 and a display 1-300.

The base 1-610 is a part of the casing of the electronic device, and the battery 1-500 is disposed on the base 1-610. The frame 1-400 is disposed above the battery 1-500 and has a receiving slot 1-410 (this receiving slot may be omitted depending on the design). The optical sensor 1-200 is installed on a receiving bottom 1-420 of the receiving slot 1-410, and is used for sensing an image of a target 1-F. When the accommodation groove is omitted, the optical sensor 1-200 is mounted on the frame 1-400. The display 1-300 is disposed above the optical sensor 1-200 for displaying information. The target 1-F is located on or above the display 1-300. The optical sensor 1-200 senses the image of the target 1-F through the display 1-300, and the battery 1-500 powers the optical sensor 1-200 and the display 1-300 to maintain the operation of the electronic device. The shortest distance 1-d between the receiving bottom 1-420 of the frame 1-400 for mounting the optical sensor 1-200 and the display 1-300 is between 0.1 mm and 0.5 mm; between 0.2 and 0.5 mm; 0.3 to 0.5 mm; or 0.4 to 0.5 mm.

The optical sensor 1-200 includes a substrate 1-201, a first transparent dielectric layer 1-207, and a plurality of microlenses 1-210. The substrate 1-201 has a plurality of sensor pixels 203 arranged in an array. The first transparent dielectric layer 1-207 is located above the substrate 1-201. These microlenses 1-210 are arranged in an array and are located on or above the first transparent dielectric layer 1-207 (FIG. 1) (such as FIG. 9 described later). These microlenses 1-210 respectively enter a plurality of parallel normal incident light (or direct incident light) 1-L1 entering the microlenses 1-210 from the outside through a first transparent medium layer 1-207 and incident on Part of the total number of these sensing pixels 1-203 (Figures 16A and 16B described below refer to some sensing pixels 1-203) or all (Figure 1) inside (representing the corresponding sensing pixels 1-203 Light is received), and a plurality of parallel oblique incident light L2 entering the microlenses 1-210 from the outside are incident on a part of the total number of these sensing pixels 1-203 (referred to in FIGS. 16A and 16B described later, It is some sensing pixels 1-203) or all (Fig. 1) outside (indicating that the corresponding sensing pixels 1-203 cannot receive light), thereby sensing an image of the target 1-F. The meaning of a part of the total number of sensing pixels 1-203 is explained below. For example, the total number of (M + N) sensing pixels 1-203, where M and N are natural numbers, and the M sensing pixels 1-203 are a part of the total number of sensing pixels 1-203. The full meaning of the total number of sensing pixels 1-203 is explained below. For example, the total number of (M + N) sensing pixels 1-203, (M + N) sensing pixels 1-203 is the total number of sensing pixels 1-203. The target 1-F can reflect the ambient light, the light provided by the display 1-300, or a mixture of the two to generate the parallel normal incident light 1-L1 and the parallel oblique incident light 1-L2. The normal incident lights 1-L1 are parallel to the multiple optical axes 1-OA of the microlenses 1-210. Each oblique incident light 1-L2 forms an angle 1-ANG with each optical axis 1-OA. Since the normal incident light 1-L1 plotted in FIG. 2 travels in the vertical direction, it is parallel to the optical axis 1-OA. However, this embodiment does not limit the normal incident light 1-L1 to be parallel to the optical axis 1-OA. In an embodiment, the included angle between the normal incident light 1-L1 and the optical axis 1-OA that can be received by the sensing pixel 1-203 through the micro lens 1-210 is between -3.5 degrees and 3.5 degrees. ; -4 degrees to +4 degrees; or -5 degrees to +5 degrees, that is, the angle 1-ANG is between 3.5 degrees and 90 degrees; 4 degrees to 90 degrees; or 5 degrees to Between 90 degrees. That is, the oblique incident light 1-L2 with an angle of more than 3.5 degrees or 5 degrees with the optical axis 1-OA cannot enter the sensing pixels 1-203.

The detailed structure of the first embodiment is explained below. The optical sensor 1-200 also includes a dielectric layer group 1-202, a first light-shielding layer 1-204, a protective layer 1-205, and an optical filter layer 1-206 (the protective layer 1-205 can also be considered as Is part of the optical filter layer 1-206). The dielectric layer group 1-202 is located on the substrate 1-201 and covers the sensing pixels 1-203. The first light-shielding layer 1-204 is located on the dielectric layer group 1-202 and has a plurality of first apertures 1-204A. The normal incident light 1-L1 passes through the first light holes 1-204A, and the oblique incident light 1-L2 does not pass through the first light holes 1-204A. The protective layer 1-205 is located on the first light-shielding layer 1-204 and can be filled in the first light-shielding layer 1-204. The optical filter layer 1-206 is located on the protective layer 1-205, and performs a wavelength filtering action on the forward incident light 1-L1 and the oblique incident light 1-L2. The first transparent medium layer 1-207 They are located on the optical filter layer 1-206, and the microlenses 1-210 are located on the first transparent medium layer 1-207.

Therefore, the present invention provides an optical sensor, an optical sensing system using the optical sensor and a manufacturing method thereof, and particularly, an optical biometric sensor applied under a screen and an optical sensing system using the optical sensor. As shown in FIG. 1, the optical sensor 1-200 provided in the embodiment of the present invention has a controllable angular collimation structure (Angle Controllable Collimator), and the controllable angle collimation structure includes a first exposure sensor pixel 1-203 The light-shielding layer 1-204 and the first light hole 1-204A formed by removing a part of the first light-shielding layer 1-204, and the optical filter layer 1 formed on the first light-shielding layer 1-204 and the first light-hole 1-204A 206, the first transparent dielectric layer 1-207, and the microlenses 1-210 formed on the first transparent dielectric layer 1-207.

This controllable angle collimation structure uses the relative position design (such as optical axis alignment or offset) of the microlens 1-210 and the first optical aperture 1-204A (including the sensing pixel 1-203) to control the specific Only the angle of the incident light (normal incidence or oblique incidence) can be sensed by the sensing pixels 1-203, so the quality of the optical sensor can be effectively improved. The formation method of the controllable angle collimation structure of the optical sensor provided by the present invention has the advantages of simplified cost and simplified manufacturing process compared with the traditional process. Most importantly, using this optical sensor has a high degree of module design. Or the thickness can also be less than 0.5mm, and the optical sensor module can be arranged between the screen and the battery without affecting the configuration of the battery, which completely solves the problems of the known technology. It is worth mentioning that the application of the sensor and optical sensor module of the present invention is not limited to fingerprint applications as described in the background art, and it can also be applied to include finger veins, blood flow rate, and blood oxygen detection. Furthermore, it can be used for non-contact image shooting, such as an under-camera camera, for example, shooting faces or eyes, or general camera functions, such as face recognition or iris recognition, etc.

When the optical sensor 1-200 of FIG. 1 is applied to, for example, an optical sensing system 1-600 of a mobile phone system, since the mobile phone system is a known technology, not all the detailed structures are shown here, but only for the cooperation with the present invention. The optical sensor 1-200 must be described by integrating several key components considered together. The optical sensing system 1-600 includes a display 1-300 and an optical sensor 1-200 below the display 1-300. The display 1-300 may be an organic light-emitting diode (OLED) display or a micro-light emitting device. Diode (Micro LED) displays, or other displays that may develop in the future. In some embodiments, the display 1-300 in the optical sensing system 1-600 can be used as a light source, and the light emitted by the display 1-300 will irradiate the target 1-F that is in contact or non-contact with the upper surface of the display 1-300. The object 1-F then reflects this light to the optical sensor 1-200 disposed under the display 1-300 to sense and recognize the contour features of the target object 1-F (such as the fingerprint fingerprint characteristics). It is worth noting that the optical sensors 1-200 in the optical sensing system 1-600 can also be used with light sources of other shapes and wavelengths (such as infrared light sources), so the embodiments of the present invention are not limited to this. It can also be a passive camera, that is, there is no need to project a light source onto the target (object) 1-F to be measured. In addition, it is worth noting that for the sake of simplicity, the structure of the optical sensor 1-200 does not show all the detailed structural layers. For example, the CMOS manufacturing process is divided into the front section (Front End Of Line, FEOL) and the back section ( Back End Of Line (BEOL), the front section includes a metal oxide semiconductor (MOS) structure, or the back section includes multiple metal connection layers and inter-metal dielectric layers (IMD). Here Most of them are omitted, and only focus on the innovative spirit of the present invention, and this part will be described in detail later in the manufacturing process.

In FIG. 1, the optical sensor 1-200 is configured to be included in an optical sensor module 1-1300. The optical sensor module 1-1300 includes a hard board 1-1301, a flexible circuit board 1-1302, and an optical sensor. 1-200 is a bond wire 1-1303 which is electrically connected to the flexible circuit board 1-1302. The bond wire 1-1303 is protected by the sealing layer 1-1306. The top surface of the sealant layer 1-1306 may be flush with the top surface of the first transparent dielectric layer 1-207, but is not limited thereto. In some embodiments, the bonding wires 1-1303 may be formed of aluminum, copper, gold, other suitable conductive materials, the alloys described above, or a combination thereof.

The optical sensor module 1-1300 (including the optical sensor 1-200) is disposed on a frame 1-400 (commonly referred to as a middle frame) used for internal assembly and support of a mobile phone. The frame 1-400 is usually made of a metal material. As mentioned in the introduction of the present invention, in order to set the optical sensor module 1-1300 of the present invention within a narrow distance 1-d of less than 0.5 mm (defined in the present invention as the bottom of the optical sensor module 1-1300 to the display 1-300 Distance of the bottom of the frame), of course, the frame 1-400 can also be manufactured in advance to form a recess (as shown in the figure, of course, it is not limited to this, the recess is not required, or the middle frame can form a perforation, so The module is disposed in the perforation. At this time, the optical sensor 1-200 is installed in the frame 1-400), so that the optical sensor module 1-1300 can be installed to increase the flexibility in the overall thickness design. In addition, a battery 1-500 is provided under the frame 1-400, which is used to explain the main point of the present invention is to propose an ultra-thin optical sensor module 1-1300 (including an optical sensor) without the need to allow part of the battery space. 1-200), set between the frame 1-400 (battery 1-500) and the display 1-300. Of course, in order to facilitate production and maintenance, it can also be fixed by glue, screws or other methods.

According to some embodiments of the present invention, the optical sensor 1-200 shown in FIG. 1 includes a substrate 1-201 having a sensing pixel (such as a photodiode) 1-203 arranged in an array, and a dielectric layer. Set (may include one or more dielectric layers and one or more metal wire layers) 1-202, a first light-shielding layer 1-204 having a plurality of first light holes 1-204A, a protective layer 1-205, optical The filter layer 1-206 (for filtering infrared light in sunlight, of course, is not limited to this), the first transparent layer 1-207, and the microlens 1-210. In some embodiments, the first light hole 1-204A and the sensing pixels 1-203 may be a one-to-one, one-to-many, or many-to-one design; the microlens 1-210 and the sensing pixels 1-203 may also be It is a one-to-one, one-to-many, or many-to-one design.

The operation principle of the optical sensor 1-200 of the present invention will be explained with reference to FIG. 2 below. The forward incident light 1-L1 and the oblique incident light 1-L2 are incident on the optical sensor 1-200 at different angles, respectively. If the microlens 1-210 and the first optical hole 1-204A are aligned on the same optical axis, the forward incident light 1-L1 will be focused on the sensing pixel 1-203 and obliquely incident due to the focusing effect of the lens. Light 1-L2 is also focused off the optical axis due to the lens effect, and is therefore blocked by the first light-shielding layer 1-204. Therefore, it has the function of a controllable angle collimation structure. FIG. 3 is a characteristic diagram of an optical sensor according to a first embodiment of the present invention. FIG. 3 clearly shows that using the data measured by the present invention, it is possible to easily control the divergence angle of only about 3.5 degrees at half maximum width, which proves the particularity and superiority of the controllable angle collimation structure of the present invention.

FIG. 4 is a schematic cross-sectional view of an optical sensing system according to a second embodiment of the present invention. As shown in FIG. 4, this embodiment is similar to the first embodiment, except that the optical filter layer 1-206 formed by integrated wafer manufacturing (wafer thin film manufacturing process) is an optical filter plate 1-900 Instead, the optical filter board 1-900 is an independent optical filter board assembled by a rear module, and a dam structure or a frame 1-1305 provided on a flexible circuit board 1-1302 is used for The rest of the optical filter plate 1-900 is the same as the description of each component in FIG. 1, so it will not be repeated here. Therefore, the protective layer 1-205 is located on the first light-shielding layer 1-204, and these microlenses 1-210 are located on the first transparent dielectric layer 1-207. The optical filter plate 1-900 is located above these microlenses 1-210, and performs a wavelength filtering action on the forward incident light 1-L1 and the oblique incident light 1-L2. For example, the optical filter plate 1-900 is disposed above the microlens 1-210 through the optical sensor module 1-1300.

It is worth noting that although the optical sensor module 1-1300 of the optical sensing system 1-600 of the present invention is disposed above or in the middle of the frame 1-400, other embodiments may be attached to the display 1-300. Lower surface 1-300B.

FIG. 5 is a schematic diagram showing an operating state of the optical sensor according to the first embodiment of the present invention. As shown in FIG. 5, because the microlenses 1-210 of the formed array leave blank areas (such as the areas indicated by the gaps 1-G) during manufacturing, such as the flat areas shown in the figure. This is mainly because the microlens 1-210 has a circular structure, and the array of sensing pixels 1-203 below the microlens 1-210 cannot completely match the geometric dimensions of the microlens 1-210 due to the mask layout. Therefore, if light enters from the blank area between the microlenses 1-210, such as the second oblique incident light (or adjacent stray light) L3 shown in the figure, it enters the first light hole 1-204A. The exposed sensing pixels 1-203 will cause stray light interference and reduce image quality.

FIG. 6 is a schematic cross-sectional view of an optical sensor according to a third embodiment of the present invention. As shown in FIG. 6, this embodiment is similar to the first embodiment, except that a lens light-shielding layer 1-21 is provided in a space between adjacent microlenses 1-210, and only the microlens 1-210 is exposed. Curved area, which can effectively solve the problem of interference of stray light in adjacent gaps caused by the second oblique incident light 1-L3.

Therefore, the optical sensor 1-200 may further include a lens light-shielding layer 1-211 located on the first transparent medium layer 1-207 and a plurality of gaps 1-G between the microlenses 1-210 to shield from the outside. The plurality of parallel second oblique incident lights 1-L3 entering these gaps 1-G are prevented from entering the first transparent medium layer 1-207 and the sensing pixels 1-203. The characteristics of the oblique incident light 1-L2 in FIG. 2 are also applicable to this embodiment, so reference may also be made to the related description in FIG. 2.

FIG. 7 shows a characteristic curve of an optical sensor according to a third embodiment of the present invention. Figure 7 shows the actual measurement results. The stray light in the adjacent gap between the microlenses 1-210 can be effectively suppressed. For example, curve 1-CV1 is the result of not having the lens light-shielding layer 1-211, and curve 1-CV2 is the result of having the lens-shielding layer 1-211.

FIG. 8 is a schematic diagram showing another working state of the optical sensor according to the first embodiment of the present invention. As shown in FIG. 8, similar to the stray light interference of adjacent gaps in FIG. 5, when adjacent microlenses (not limited to the first adjacent microlenses) have crosstalk problems, that is, The third oblique incident light (or stray light from adjacent lenses) 1-L4 of the adjacent microlens 1-210N next to the target microlens 1-210M will be coupled into the normal incident light 1-210M of the target micro-lens 1 -L1, incident on a target sensing pixel 1-203M exposed from the first light hole 1-204A together, will cause interference and reduce image quality. The method of solving the above problems will be described below.

FIG. 9 is a schematic cross-sectional view of an optical sensor according to a fourth embodiment of the present invention. As shown in FIG. 9, the optical sensor 1-200 further includes a second light-shielding layer 1-208 and a second transparent dielectric layer 1-209. The second light-shielding layer 1-208 is located on the first transparent dielectric layer 1-207 and has a plurality of second light holes 1-208A. The optical axes 1-OA pass through the second light holes 1-208A. The second transparent dielectric layer 1-209 is located on the second light-shielding layer 1-208. These microlenses 1-210 are located on the second transparent medium layer 1-209. To simplify the description, one of these microlenses 1-210 is defined as a target microlens 1-210M, and the optical axis 1-OA of the target micro-lens 1-210M is defined as a target optical axis 1-OAM and a target optical axis 1 -The sensing pixels 1-203 passed by the OAM are defined as target sensing pixels 1-203M, and these microlenses 1-210 adjacent to the target micro-lens 1-210M are defined as adjacent micro-lenses 1-210N. In this state, the second light-shielding layer 1-208 shields a plurality of parallel third oblique incident lights 1-L4 entering the adjacent microlenses 1-210N from the outside from entering the first transparent medium layer 1-207. And the target sensing pixel is 1-203M. The characteristics of the oblique incident light 1-L2 in FIG. 2 are also applicable to this embodiment, so reference may also be made to the related description in FIG. 2.

Therefore, by setting the second light-shielding layer 1-208 and the second light hole 1-208A between the microlens 1-210 and the first light-shielding layer 1-204 and the first light hole 1-204A, the light from Light interference caused by crosstalk between adjacent lenses.

FIG. 10 shows a characteristic curve of the optical sensor of FIG. 8. FIG. 11 shows a characteristic graph of the optical sensor of FIG. 9. As shown in FIG. 10, when the second light-shielding layer 1-208 is not provided, the sensing pixel receives forward incident light 1-L1 (through the target microlens 1-210M) and third oblique incident light 1-L4 (through the Adjacent microlenses (1-210N), causing image ghosting. As shown in FIG. 11, when the second light-shielding layer 1-208 is provided, the sensing pixel only receives the forward incident light 1-L1, and does not receive the third oblique incident light, which does not cause an image ghost phenomenon. Therefore, the second light-shielding layer 1-208 can effectively solve the problem of crosstalk, enhance signal quality, and improve image clarity. At the same time, by providing the second light-shielding layer 1-208, not only the crosstalk problem can be effectively solved, but also the stray light interference in the blank area between the microlenses described in FIG. 5 can be suppressed at the same time, which is very effective. Approach.

FIG. 12 is a schematic partial cross-sectional view illustrating an operating principle of an optical sensor according to a fourth embodiment of the present invention. Through the superior characteristics of the structure of FIG. 9, FIG. 12 can explain in more detail how to combine the geometric design of the microlens 1-210, the first optical aperture 1-204A and the second optical aperture 1-208A and the first transparent dielectric layer 1 -207 and the second transparent medium layer 1-209 are controlled, and optical sensors of different resolutions are designed to facilitate application in different systems and applications. When designing any kind of sensor array element, there is a figure of merit that is to maximize the effective fill factor (effective sensor area / single pixel area) of a single sensor element. Applying this concept to the optical sensor of the present invention is to increase the fill factor of each microlens 1-210 (including the corresponding sensing pixels 1-203). In Figure 6, the best fill factor is the adjacent micro-lens. There is almost no space left between the lenses 1-210. In FIG. 12, A1 is the diameter (aperture) of the first light hole 1-204A, and A2 is the diameter (aperture) of the second light hole 1-208A, and h is the first light-shielding layer 1-204 and the second light-shielding layer The thickness is between 1-208, and H is the thickness between the first light-shielding layer 1-204 and the bottom surface 1-210B of the microlens 1-210. Through the geometric triangle relationship (similar triangles), a resolution design formula can be obtained, that is, X (the pitch or pitch between the two microlenses 1-210) is expressed as follows:

That is

When used as a fingerprint sensor, a preferred embodiment may be designed such that H is approximately equal to 43 μm, h is equal to approximately 15 μm, A1 is equal to approximately 4.5 μm, and A2 is equal to approximately 9 μm. According to the above formula, X is approximately equal to 20 μm. Therefore, this formula can be used as a design criterion for designing optical sensors with different resolutions. Of course, because the manufacturing process cannot be perfect, this formula does not use a complete "=" sign, but an "≈" approximation number. The error can be tolerated within 20 μm.

Therefore, in the optical sensor 1-200, the first light-shielding layer 1-204 is located above the substrate 1-201 and has a plurality of first light holes 1-204A; the second light-shielding layer 1-208 is located at the first light-shielding layer 1 -204, and has a plurality of second light holes 1-208A. The microlenses 1-210 are respectively located above the second light holes 1-208A, and the optical axes 1-OA pass through the second light holes 1-208A and the first light holes 1-204A, respectively. The pitch X of these microlenses 1-210 is expressed by the following formula:

X = A1 + (H / h) * (A2-A1) ± 20μm

Where A1 represents the aperture of the first optical aperture 1-204A, A2 represents the aperture of the second optical aperture 1-208A, and H represents the distance between the bottom surface 1-210B of the microlens 1-210 and the first light-shielding layer 1-204, h represents the distance between the second light-shielding layer 1-208 and the first light-shielding layer 1-204.

13 is a schematic cross-sectional view of an optical sensor according to a fifth embodiment of the present invention. As shown in FIG. 13, this embodiment is similar to the first embodiment, except that the lateral dimensions of the sensing pixels 1-203 ′ (the horizontal dimensions in FIG. 13) are designed to receive such normal incident light 1. -L1, but does not receive these oblique incident light 1-L2, and the optical sensor 1-200 does not have any light shielding layer between the first transparent medium layer 1-207 and these sensing pixels 1-203 '. This oblique incident light 1-L2 is shielded.

In detail, in the optical sensor 1-200, a dielectric layer group 1-202 is located on the substrate 1-201 and covers these sensing pixels 1-203 ′, and a protective layer 1-205 is located in the dielectric layer group 1- On 202, the optical filter layer 1-206 is located on the protective layer 1-205, and performs a wavelength filtering action on the forward incident light 1-L1 and the oblique incident light 1-L2. The first transparent medium layer 1-207 is located on the optical filter layer 1-206, and the microlenses 1-210 are located on the first transparent medium layer 1-207. Therefore, in this embodiment, the design of the first light-shielding layer 1-204 and the first light hole 1-204A of FIG. 2 is not implemented, but the geometric dimensions of the sensing pixels 1-203 ′ (approximately equivalent to The size of a light hole 1-204A) to avoid the interference caused by the oblique incident light 1-L2 in FIG. 2, which can effectively simplify the manufacturing process steps and costs.

FIG. 14 is a schematic partial cross-sectional view of an optical sensor according to a sixth embodiment of the present invention. FIG. 15 shows a characteristic curve of the optical sensor of FIG. 14. 16A and 16B are schematic partial cross-sectional views showing two examples of an optical sensor according to a seventh embodiment of the present invention. As shown in FIGS. 14 to 16, in order to avoid confusion, only the section lines of the light shielding layer are drawn. This embodiment is similar to the first embodiment, except that the optical sensor 1-200 further includes: a plurality of offset microlenses 1 -210A, arranged in an array, and located on or above the first transparent dielectric layer 1-207; and a lens light-shielding layer 1-211 similar to FIG. 6, located on the first transparent dielectric layer 1-207, and these offsets In the gap 1-G between the microlenses 1-210A. In FIG. 16A, the offset microlenses 1-210A are arranged on the periphery of the microlenses 1-210. These microlenses 1-210 respectively enter the parallel normal incident light 1-L1 into a part of the total number of these sensing pixels 1-203, and the parallel oblique incident light 1-L2 (see FIG. 2) is incident on the outside of a part of the total number of these sensing pixels 1-203. These offset microlenses 1-210A respectively enter a plurality of parallel second forward incident light 1-L1 'from the outside into these offset microlenses 1-210A through the first transparent medium layer 1-207 and are incident. Outside of the rest of the total number of these sensing pixels 1-203, a plurality of parallel fourth oblique incident lights 1-L5 entering the offset microlenses 1-210A from the outside are incident on these sensors. Inside the rest of the total number of pixels 1-203. The target 1-F generates the parallel second forward incident lights 1-L1 'and the parallel fourth oblique incident lights 1-L5. These second normal incident lights 1-L1 'are parallel to the plurality of optical axes 1-OAA of these offset microlenses 1-210A. Each fourth oblique incident light 1-L5 and each optical axis 1-OAA form a second angle 1-ANG2 (see FIG. 14). As shown in the angular response results of FIG. 15, this embodiment can control the fourth oblique incident light 1-L5 of about 35 ° ± 3.5 ° to enter the sensing pixels 1-203, which is the second angle 1 of this embodiment. -ANG2 is between 31.5 degrees and 38.5 degrees. Of course, this second angle 1-ANG2 can be selected by design. In the present invention, any angle between 3.5 or 5 degrees and 60 degrees The oblique incident light may be incident on the inside of the sensing pixel 1-203. Therefore, the second angle 1-ANG2 can be selectively changed. FIG. 16B is similar to FIG. 16A except that the second light-shielding layer 1-208 and the second transparent dielectric layer 1-209 are incorporated. For related features, refer to the related description of FIG. 9, and details are not described herein again.

Therefore, in FIG. 14, the design of the collimator that only allows the forward incident light 1-L1 in the foregoing embodiments is changed to all or part of the pixels allowing only the fourth oblique incident light 1-L5 to enter therein. Either allow incident light at several oblique angles, or enter the incident light with a progressive change of oblique angle. Since there are many ways that can be implemented, in order to simplify the description, FIG. 14 only describes a design that allows a specific oblique angle of incidence. As shown in the figure, there is no need to add new materials or structures (compared to FIG. 2), but the optical axis of the microlens 1-210 is designed to be offset so that it does not correspond to the corresponding first light hole 1 -204A is aligned, so the light including the normal incident light will be blocked by the first light-shielding layer 1-204 (such as the second normal incident light 1-L1 'in FIG. 14). From the actual measurement data shown in FIG. 14, it can be seen that even with incident light at an angle of about 35 degrees, a quality of about 3.5 degrees FWHM can still be obtained (compared to the data of normal incidence of FIG. 3).

Applying the inventive concept of FIG. 14, FIG. 16A and FIG. 16B combine FIG. 2 and FIG. 14. In an array of sensing pixels 1-203, the optical axis of the microlens 1-210 corresponding to the center from the periphery to The offset of the optical aperture, from 0 degrees to a predetermined oblique angle (for example, 35 degrees), which can allow several oblique angles (offset of several optical axes), or it can be progressive Change the oblique angle of incidence (continuous optical axis offset) in this way, so that the area 1-SR of the array of smaller sensing pixels 1-203 can be used to sense a larger area 1-CR of the object to be measured (for example, Fingerprint contact area), which not only increases the accuracy of the sensing (which increases as the area increases), but also effectively reduces the cost (which decreases as the sensor area decreases). Those skilled in the art can use the description of several embodiments of the present invention to combine different designs without departing from the scope of this embodiment and the invention.

It is worth noting that according to the structure shown in FIG. 14, this embodiment also provides an optical sensor 1-200, which includes a substrate 1-201, a first transparent dielectric layer 1-207, and a plurality of offset microlenses 1 -210A. The substrate 1-201 has a plurality of sensing pixels 1-203 arranged in an array. The first transparent dielectric layer 1-207 is located above the substrate 1-201. These offset microlenses 1-210A are arranged in an array and are located on or above the first transparent dielectric layer 1-207. These offset microlenses 1-210A respectively enter a plurality of parallel normal incident light 1-L1 'from the outside into these offset microlenses 1-210A, and enter here through the first transparent medium layer 1-207. A part or all of the total number of these sensing pixels 1-203 are external, and a plurality of parallel fourth oblique incident light 1-L5 entering these offset microlenses 1-210A from the outside are incident on these sensing pixels 1-203 total or part of the total, thereby sensing an image of a target 1-F, the target 1-F generates these parallel normal incident light 1-L1 'and these parallel fourth The oblique incident light 1-L5, these forward incident light 1-L1 'are parallel to the multiple optical axes 1-OAA of these offset microlenses 1-210A, each fourth oblique incident light 1-L5 and each The optical axis 1-OAA clips out the second angle 1-ANG2.

In the optical sensor 1-200, a dielectric layer group 1-202 is located on the substrate 1-201 and covers these sensing pixels 1-203; a first light-shielding layer 1-204 is located on the dielectric layer group 1-202, and There are a plurality of first light holes 1-204A. The forward incident light 1-L1 'does not pass through the first light holes 1-204A, and the fourth oblique incident light 1-L5 passes through the first light holes 1-204A. The protective layer 1-205 is located on the first light-shielding layer 1-204. The optical filter layer 1-206 is located on the protective layer 1-205, and performs a wavelength filtering action on the forward incident light 1-L1 'and the fourth oblique incident light 1-L5. The first transparent medium layer 1-207 is located on the optical filter layer 1-206, and these offset microlenses 1-210A are located on the first transparent medium layer 1-207. The optical sensor 1-200 of FIG. 14 can also be applied to the optical sensing system 1-600 of FIG. 1, and those skilled in the art can easily consider the setting method of applying it to the optical sensing system 1-600 of FIG. 1, so here No more details.

17A to 17E are schematic cross-sectional views showing the steps of a method for manufacturing an optical sensor according to an eighth embodiment of the present invention. The structure of this embodiment is similar to that of the first embodiment shown in FIG. 2, except that it further includes a lens light shielding layer 1-21. First, as shown in FIG. 17A, a substrate 1-201 is provided with a plurality of sensing pixels 1-203 arranged in an array. 17B to 17D, a first transparent dielectric layer 1-207 is formed over the substrate 1-201. In detail, as shown in FIG. 17B, a dielectric layer group 1-202 is formed on the substrate 1-201, and a first light-shielding layer 1-204 is formed on the dielectric layer group 1-202 (that is, on the substrate 1- A first light-shielding layer 1-204) and a first light hole 1-204A are formed between 201 and the first transparent dielectric layer 1-207. Then, as shown in FIG. 17C, a protective layer 1-205 is formed on the first light-shielding layer 1-204 and the first optical hole 1-204A, and an optical filter layer 1-206 is further formed on the protective layer 1-205. Next, as shown in FIG. 17D, a first transparent dielectric layer 1-207 is formed on the optical filter layers 1-206. Then, a plurality of microlenses 1-210 are formed on or above the first transparent medium layer 1-207 and arranged in an array, so that the optical sensor 1-200 of FIG. 2 is formed.

Next, as shown in FIG. 17E, a lens light-shielding layer 1-211 is formed on the first transparent medium layer 1-207 and the microlenses 1-210. That is, a lens light-shielding layer 1-211 is formed in a plurality of gaps 1-G between the microlenses 1-210.

It is worth noting that the above manufacturing method can also be applied to the offset microlens 1-210A of FIG. 14 to manufacture the optical sensor 1-200 having the offset microlens 1-210A. Those skilled in the art can easily consider the manufacturing method of the optical sensor 1-200, so it will not be described in detail here.

18A to 18F are schematic cross-sectional views showing the steps of a method for manufacturing an optical sensor according to a ninth embodiment of the present invention. The structure of this embodiment is similar to that of the fourth embodiment of FIG. 9, except that it further has a lens light shielding layer 1-21. 19A to 19F are schematic cross-sectional views showing the steps of a method for manufacturing an optical sensor according to a tenth embodiment of the present invention. The structure of this embodiment is similar to that of the fifth embodiment of FIG. 13 except that it has a second light-shielding layer 1-208, a second transparent dielectric layer 1-209, and a lens light-shielding layer 1-211.

17A to 17E, FIGS. 18A to 18F, and FIGS. 19A to 19F will be comprehensively described through the structural diagrams of the steps of the manufacturing method.

In FIGS. 17A / 18A / 19A, the substrate 1-201 may be a semiconductor substrate, such as a silicon substrate. In addition, in some embodiments, the semiconductor substrate may be an elemental semiconductor, including: Germanium; a compound semiconductor, including: Gallium Nitride, Silicon Carbide ), Gallium Arsenide, Gallium Phosphide, Indium Phosphide, Indium Arsenide, and / or Indium Antimonide; Alloy Semiconductor , Including: SiGe, SiAs, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, And / or GaAsAs, or a combination of these materials. In other embodiments, the substrate 1-201 may be a semiconductor-on-insulator substrate. The semiconductor substrate-on-insulator substrate may include a base plate, a buried oxide layer provided on the base plate, and a buried oxide layer. A semiconductor layer on a layer. In addition, the substrate 1-201 may be an N-type or a P-type conductive type.

In some embodiments, the substrate 1-201 may include various isolation components (not shown) for defining an active region and electrically isolating active region elements in / on the substrate 1-201. In some embodiments, the isolation component includes a Shallow Trench Isolation (STI) component, a local oxidation of silicon (LOCOS) component, other suitable isolation components, or a combination thereof.

In some embodiments, the substrate 1-201 may include various P-type doped regions and / or N-type doped regions (not shown) formed by, for example, ion implantation and / or diffusion processes. In some embodiments, the doped region may form a transistor, a photodiode, or the like. In addition, the substrate 1-201 can also include various active components, passive components, and various conductive components (such as conductive pads, wires, or vias).

An array of sensing pixels 1-203 / 1-203 'is formed in the substrate 1-201, and the sensing pixels 1-203 / 1-203' can be connected to a Signal Processing Circuit (not shown). In some embodiments, the number of sensing pixels 1-203 / 1-203 'depends on the size of the area 1-SR of the optical sensing (sensing) region. Each sensing pixel 1-203 / 1-203 'may include one or more Photodectors. In some embodiments, the photodetector may include a photodiode, where the photodiode may include a P-type semiconductor layer, an intrinsic layer, and a three-layer structure of a photovoltaic material (Photoelectric Material). The light is absorbed to generate excitons, and the excitons are divided into electrons and holes at the interface between the P-type semiconductor layer and the N-type semiconductor layer, thereby generating a current signal. In some embodiments, the light detector may be a CMOS image sensor, such as a Front-Side Illumination (FSI) CMOS image sensor or a Back-Side Illumination (BSI) CMOS image sensor. In some other embodiments, the light detector may also include a charge coupled device (CCD) sensor, an active sensor, a passive sensor, other suitable sensors, or a combination thereof. In some embodiments, the sensing pixels 1-203 / 1-203 'can convert the received light signals into electronic signals through a photodetector, and process the electronic signals through a signal processing circuit.

In some embodiments, the sensing pixels 1-203 / 1-203 'are arranged in an array to form a sensing pixel array. However, the cross-sectional view shown in FIG. 2 shows only one column of the array of the sensing pixels 1-203 / 1-203 ', and is located below the upper surface of the substrate 1-201. It should be noted that the number and arrangement of the sensing pixels 1-203 / 1-203 'shown in the drawings of all the embodiments are only exemplary, and the embodiments of the present invention are not limited thereto. The sensing pixels 1-203 / 1-203 'may be an array of any number of rows and columns or other arrangements.

In FIG. 17B / FIG. 18B / FIG. 19B, a dielectric layer group 1-202 is formed over the substrate 1-201 and the sensing pixels 1-203 / 1-203 ', and the dielectric layer group 1-202 is mainly made of integrated circuits. The combination of the BEOL metal connection line and the intermetal dielectric layer in the latter part of the process is not described here because it is a known technology. In particular, pay attention to the fact that during the design, there should be no metal on the path of incident light. Shelter. Next, a first light-shielding layer 1-204 is formed on the dielectric layer group 1-202. The first light-shielding layer 1-204 may include a light-shielding material, which has a light transmittance of less than 1% for light having a wavelength range below 1200 nanometers, but it is of course not limited to this.

In some embodiments, the first light-shielding layer 1-204 may include a metal material (in this embodiment, the last metal of the integrated circuit manufacturing process), such as tungsten (W), chromium (Cr), aluminum (Al), or titanium (Ti) and so on. In this embodiment, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD) (for example, vacuum evaporation process, sputtering process) ), Pulsed Laser Deposition (PLD), Atomic Layer Deposition (ALD), other suitable deposition processes, or a combination thereof to blanketly form the first light-shielding layer 1-204. In some embodiments, the first light-shielding layer 1-204 may include a polymer material having light-shielding properties, such as epoxy resin, polyimide, and the like. In this embodiment, the first light-shielding layer 1-204 can be formed in the dielectric layer group by, for example, spin-coating, chemical vapor deposition (CVD), other suitable methods, or a combination thereof. 1-202. The thickness of the first light-shielding layer 1-204 formed by the above method ranges from about 0.3 micrometers (micrometers) to about 5 micrometers, for example, it can be 2 micrometers. In some embodiments, the selected thickness of the first light-shielding layer 1-204 depends on the light-shielding ability of the material of the first light-shielding layer 1-204. For example, the light-shielding ability of the light-shielding material included in the first light-shielding layer 1-204 is different from its thickness. Negative correlation.

A patterning process is then performed on the first light-shielding layer 1-204 to form a plurality of first light holes 1-204A having a first aperture A1. The aforementioned patterning process may include a photolithography process and an etching process. The photolithography process may include, for example, photoresist coating (e.g., spin coating), soft baking, exposure patterns, post-exposure baking, photoresist development, cleaning and drying (e.g., hard baking), other suitable processes, or A combination of the above. The etching process may include, for example, a wet etching process, a dry etching process (such as Reactive Ion Etching (RIE), plasma etching, ion milling), other suitable processes, or a combination thereof. . The first pore size A1 formed by the above method is in a range of about 0.3 micrometers to about 50 micrometers, for example, about 4 micrometers to about 5 micrometers.

It is worth noting that the first light holes 1-204A and the sensing pixels 1-203 shown in FIG. 5 are arranged in a one-to-one correspondence, however, in the other embodiments of the present invention, the first The light holes 1-204A and the sensing pixels 1-203 can also be correspondingly set in a one-to-many or many-to-one manner. For example, one first light hole 1-204A may expose more than two sensing pixels 1-203 (not shown), or one sensing pixel 1-203 may be from more than two first light holes 1- 204A is exposed (not shown). FIG. 5 only illustrates an exemplary setting manner, and the present invention is not limited thereto. According to some embodiments of the present invention, by controlling the first aperture A1 of the patterned first light-shielding layer 1-204, the range of the field angle of the incident light can be adjusted.

In FIGS. 17C / 18C / 19C, a protective layer 1-205 and an optical filter layer 1-206 are formed over the first light-shielding layer 1-204 and the first light hole 1-204A. In this embodiment, the protective layer 1-205 is a protective layer of an integrated circuit, which may be a silicon oxide or a silicon nitride material or a combination of the two. Of course, this protective layer 1-205 may be selectively omitted (see FIGS. 20 and 21), for example, when the material of the first light-shielding layer 1-204 is a polymer material with light-shielding properties. The optical filter layers 1-206 may be infrared filter layers (ICF). Visible light has a high transmittance to the infrared filter layer, and infrared light has a high reflectivity to it, which can reduce the interference of infrared rays from sunlight, for example.

In FIGS. 17D / 19D, a first transparent dielectric layer 1-207 is formed on the optical filter layer 1-206. The first transparent dielectric layer 1-207 may include a UV-Curable Material, a heat-curable material ( Thermosetting (Material), or a combination of the above. For example, the first transparent dielectric layer 1-207 may include, for example, Poly (Methyl Methacrylate, PMMA), Polyethylene Terephthalate (PET), and Polynaphthalate Polyethylene glycol (Naphthalate, PEN), Polycarbonate (PC), Perfluorocyclobutyl (PFCB) polymer, Polyimide (PI), Acrylic resin, Epoxy resin ), Polypropylene (PP), Polyethylene (PE), Polystyrene (PS), Polyvinyl Chloride (PVC), other suitable materials, or a combination thereof. In some embodiments, Spin-Coating, Dry Film, Casting, Bar Coating, Blade Coating, and Roll Coating (Coating) can be used. Roller Coating, Wire Bar Coating, Dip Coating, Chemical Vapor Deposition (CVD), and other suitable methods. In some embodiments, the thickness of the first transparent dielectric layer 1-207 formed by the above method ranges from about 1 micrometer to about 100 micrometers, for example, it can be 10 to 50 micrometers. According to some embodiments of the present invention, the first transparent dielectric layer 1-207 formed by the foregoing process method has high yield and good quality. In addition, by controlling the thickness of the first transparent medium layer 1-207, the offset distance of the light after passing through the microlens 1-210 can be increased or decreased, thereby improving the accuracy of the angle of incident light that the array of sensing pixels 1-203 can receive. degree.

The microlens 1-210 is formed over the first transparent dielectric layer 1-207. The two can be a homogeneous material or a heterogeneous material (here, homogeneous). The formation method is usually a high-temperature reflow (Reflow) The thick film polymer material forms a hemispherical structure by means of cohesive force. Of course, the first transparent dielectric layer 1-207 and the micro-lens 1-210 may also be dielectric materials, such as glass, which can also improve light transmission. In these embodiments, the step of drying (for example, hard baking) in the photolithography process can utilize the effect of surface tension to form a hemispherical microlens 1-210, and the required micro-lens can be adjusted by controlling the heating temperature. The radius of curvature of the lens 1-210. In some embodiments, the thickness of the formed microlenses 1-210 ranges from about 1 micrometer to about 50 micrometers. It is worth noting that the contour of the microlens 1-210 is not limited to a hemispherical shape. In the embodiment of the present invention, the contour of the microlens 1-210 can also be adjusted according to the required angle of incident light. aspheric).

In FIG. 18D / FIG. 19D, the structure of adding a second light-shielding layer 1-208 has the same material characteristics as the first light-shielding layer 1-204 in this embodiment, and details are not described herein. In addition, the second light hole 1-208A is formed in the second light-shielding layer 1-208 through the photolithography technology, which is the same as the method for forming the first light hole 1-204A, and details are not described herein.

In FIG. 18E / FIG. 19E, a second transparent dielectric layer 1-209 is formed over the second light-shielding layer 1-208 and the second light hole 1-208A. The material and forming method of the second transparent dielectric layer 1-209 and the first A transparent dielectric layer 1-207 is the same, and will not be repeated here. In summary, a second light-shielding layer 1-208 and a second transparent dielectric layer 1-209 are formed between the microlens 1-210 and the first transparent dielectric layer 1-207. Finally, a microlens 1-210 is formed over the second transparent dielectric layer 1-209. The formation method and materials have been described previously, and are omitted here.

In FIG. 17E / FIG. 18F / FIG. 19F, a gap between the lens light-shielding layer 1-211 and the micro-lens 1-210 may be further formed according to requirements. The material of the lens light-shielding layer 1-211 may be the same as the first light-shielding layer. The material of the layer 1-204 / the second light-shielding layer 1-208 is not repeated here.

FIG. 20 is a schematic cross-sectional view showing a structure of an optical sensor according to a modification of the eighth embodiment of the present invention. This modification is a structure in which the protective layers 1-205 of FIG. 17E are omitted, and the same points are not described again. In this variation, the optical filter layer 1-206 is located on the first light-shielding layer 1-204, and may be filled in the first light hole 1-204A. This can reduce the number of manufacturing steps, reduce manufacturing costs, and reduce the thickness of the optical sensor.

FIG. 21 is a schematic cross-sectional view showing a structure of an optical sensor according to a modified example of the tenth embodiment of the present invention. This modification is a structure in which the protective layers 1-205 in FIG. 19F are omitted, and the same points are not described again. In this variation, the optical filter layers 1-206 are located on the dielectric layer group 1-202. This can reduce the number of manufacturing steps, reduce manufacturing costs, and reduce the thickness of the optical sensor.

In summary, the optical sensing system provided by the embodiment of the present invention includes a design using a display (such as a screen panel of a mobile device) as a light source. Furthermore, in the optical sensing system, the configuration and / or other parameters of the first opening of the micro lens and the first light-shielding layer included in the optical sensor with different lateral offset distances and other parameters (such as the aperture of the first opening, The configuration of the thickness of the first transparent medium layer and / or the curvature radius of the microlens) enables the sensing pixel to receive light from different ranges of incident angles. Accordingly, light rays incident from a specific range of field angles can be incident on the sensing pixels. In addition, since the optical sensing system provided by the present invention can receive light incident at an oblique angle, the area of the optical sensing area can be smaller than the area of the object to be measured, and the technical effect of reducing the area of the optical sensor and obtaining good image quality is achieved. .

In summary, the embodiment of the present invention can realize the configuration that the sensing pixel can receive without the additional light-shielding layer through the configuration of the micro-lens that complies with the above-mentioned relationship and the sensing pixel with a smaller size. Incident light from a specific range of field angles can reduce the thickness of the optical sensor. By arranging the circuit design between sensing pixels with a smaller size, the integration density of the optical sensor can be effectively improved. The optical sensor provided by the embodiment of the present invention may use a display (such as a screen panel of a mobile device) as a light source design. Furthermore, the configuration of the microlens layer and the sensing pixel with different lateral offset distances included in the optical sensor and / or other parameters (such as the size of the sensing pixel, the refractive index of the first transparent medium layer, the first transparent medium The thickness of the layer, the focal length of the microlens, and the diameter of the microlens) can be configured so that the sensing pixels receive light from different ranges of incident angles. Accordingly, light rays incident from a specific range of field angles can be incident on the sensing pixels.

[Second group of embodiments]

The invention provides an optical sensor, an optical sensing system and a method for forming the same, particularly an optical sensor and an optical sensing system applied to an optical fingerprint recognition system under a screen. The optical sensor provided by the embodiment of the present invention has a virtual collimator structure. The virtual collimator structure includes a first light-shielding layer that exposes a sensor pixel, is formed on the first light-shielding layer, and covers the transmission. A first transparent medium layer of the sensing pixel, and a microlens formed on the first transparent medium layer. The virtual collimation structure uses a microlens to guide incident light through the first transparent medium layer to the sensing pixels exposed from the first light-shielding layer. The method for forming the virtual collimation structure of the optical sensor provided by the present invention has the advantages of lower cost and difficulty compared with the traditional process. In addition, the thickness of the optical sensor including the virtual collimation structure provided by the present invention can be less than 500 micrometers (um), which is thinner and lighter than the conventional optical sensor, and therefore it is easier to integrate into thin and light mobile electronic devices.

FIG. 22 is a simplified schematic diagram illustrating that the optical sensing system 2-100 senses a target 2-F (eg, a fingerprint of a finger) according to some embodiments of the present invention. The optical sensing system 2-100 includes a cover layer 2-101 and an optical sensor 2-200 under the cover layer 2-101. When the target object 2-F contacts the upper surface of the cover layer 2-101, the target object 2-F reflects light emitted from a light source (not shown) to the optical sensor 2-200 to receive an optical signal. The target object 2-F has various contour features, such as convex portions 2-F1 and concave portions 2-F2. Therefore, when the target object 2-F contacts the upper surface of the cover layer 2-101, the convex portion 2-F1 of the target object 2-F contacts the upper surface of the cover layer 2-101, and the concave portion of the target object 2-F 2-F2 does not contact the upper surface of the cover layer 2-101, that is, there is a gap between the recessed portion 2-F2 and the upper surface of the cover layer 2-101. Therefore, the intensity of the light (such as light 2-L1 and light 2-L2) received by the sensing pixels under the convex portion 2-F1 and the concave portion 2-F2 of the target 2-F will be different, so that Sensing and identifying the contour features (for example, fingerprint pattern features) of the target 2-F.

FIG. 23 is a schematic diagram illustrating an exemplary structure of an optical sensing system 2-100 sensing a target 2-F according to some embodiments of the present invention. The optical sensing system 2-100 includes a display 2-300 and an optical sensor 2-200 under the display 2-300. The display 2-300 may be an organic light-emitting diode (OLED) display or a micro-light emitting device. Diode (Micro LED) display. In some embodiments, the display 2-300 in the optical sensing system 2-100 can be used as a light source, and the light emitted by the display 2-300 illuminates the target 2-F, the target 2- F then reflects this light to the optical sensor 2-200 disposed under the display 2-300 to sense and recognize the contour features of the target 2-F (for example, the fingerprint fingerprint characteristics). It is worth noting that the optical sensor 2-200 in the optical sensing system 2-100 can also be used with other light sources, so the embodiments of the present invention are not limited thereto.

According to some embodiments of the present invention, the optical sensor 2-200 shown in FIG. 23 includes a substrate 2-201 having a sensing pixel array 2-202, and a first light shielding having a plurality of first openings 2-205. Layer 2-204, first transparent dielectric layer 2-206, and microlens layer 2-209. In some embodiments, the plurality of first openings 2-205 of the first light-shielding layer 2-204 disposed on the substrate 2-201 exposes the plurality of sensing pixels 2-203 of the sensing pixel array 2-202. The first transparent dielectric layer 2-206 disposed on the first light-shielding layer 2-204 covers the sensing pixels 2-203 exposed from the plurality of first openings 2-205. The plurality of microlenses 2-210 included in the microlens layer 2-209 are correspondingly disposed on the first transparent medium layer 2-206. In some embodiments, the microlenses 2-210 can be used to guide light reflected from the target 2-F and incident on the optical sensor 2-200 to pass through the first transparent medium layer 2-206 to the sensing pixel 2-203.

As shown in FIG. 23, light rays 2-L1, light rays 2-L2, and light rays 2-L3 are incident on the optical sensor 2-200 at different angles, among which light rays 2-L1 and light rays 2-L3 are incident light at an oblique angle. The light 2-L2 is light that is normally incident. In one embodiment, the light 2-L1 enters one of the microlenses 2-210A of the microlens layer 2-209 and is guided to the one exposed from one of the first openings 2-205A of the first light-shielding layer 2-204. The sensing pixel 2-203A, wherein the center line 2-C1A of the microlens 2-210A and the center line 2-C2A of the first opening 2-205A have a first lateral offset distance 2-S1. In another embodiment, the light 2-L2 enters the other microlens 2-210B of the microlens layer 2-209 and is guided to the other first opening hole 2- from the first light-shielding layer 2-204. The sensing pixel 2-203B exposed by 205B, wherein the center line of the microlens 2-210B overlaps with the center line of the first opening 2-205B. In yet another embodiment, the light 2-L3 is incident on the other micro-lens 2-210C of the micro-lens layer 2-209 and is guided from the other of the first light-shielding layer 2-204 to the first opening. The sensing pixel 2-203C exposed by the hole 2-205C, wherein the center line 2-C1C of the microlens 2-210C and the center line 2-C2C of the first opening 2-205C have a second lateral offset distance 2- S2.

According to some embodiments of the present invention, the lateral offset distance between the center line 2-C1 of the microlens 2-210 and the center line 2-C2 of the first opening 2-205 can be adjusted so that the sensing pixel 2-203 receives Light from different angles. In addition, the aperture A1 ′ of the first opening 2-205, the thickness T of the first transparent dielectric layer 2-206, and / or the radius of curvature R of the microlens 2-210 may be adjusted together, so that the sensing pixel 2 -203 receives light from different field of view angles to achieve high light collection efficiency. Furthermore, in the optical sensor 2-200 provided by the present invention, the configuration and / or other parameters of the microlens 2-210 and the first opening 2-205 with different lateral offset distances can be integrated (for example, the first opening The arrangement of the aperture A1 'of the hole 2-205, the thickness T of the first transparent medium layer 2-206, and / or the radius of curvature R of the microlens 2-210. Through the configuration of the virtual collimation structure in the optical sensor 2-200 provided by the present invention, the areas of the optical sensing area 2-SR and the target contact area 2-CR need not be configured in a one-to-one manner (for example, optical The area of the sensing area 2-SR may be smaller than the area of the target contact area 2-CR), and the technical effect of reducing the sensing area of the optical sensor 2-200 and obtaining good image quality is achieved.

24, 25, 26A, and 26B are schematic cross-sectional views illustrating the optical sensor 2-200 at various stages of the process according to some embodiments of the present invention. As shown in FIG. 24, in some embodiments, a substrate 2-201 including a sensing pixel array 2-202 is provided, and a first light-shielding layer 2-204 is formed on the substrate 2-201. The substrate may be a semiconductor substrate, such as a silicon substrate. In addition, in some embodiments, the semiconductor substrate may also be an elemental semiconductor, including: germanium; a compound semiconductor, including: gallium nitride, silicon carbide ), Gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide; alloy semiconductors , Including: SiGe, SiAs, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, And / or GaAsAs, or a combination of these materials. In other embodiments, the substrate 2-201 may also be a semiconductor-on-insulator substrate. The semiconductor-on-insulator substrate may include a base plate, a buried oxide layer provided on the base plate, and a buried oxide layer. A semiconductor layer on a layer. In addition, the substrate 2-201 may be an N-type or a P-type conductive type.

In some embodiments, the substrate 2-201 may include various isolation components (not shown) for defining an active region and electrically isolating active region elements in / on the substrate 2-201. In some embodiments, the isolation component includes a shallow trench isolation (STI) component, a local oxidation of silicon (LOCOS) component, other suitable isolation components, or a combination thereof.

In some embodiments, the substrate 2-201 may include various P-type doped regions and / or N-type doped regions (not shown) formed by, for example, ion implantation and / or diffusion processes. In some embodiments, the doped region may form a transistor, a photodiode, or the like. In addition, the substrate 2-201 may also include various active components, passive components, and various conductive components (such as conductive pads, wires, or vias).

Referring to FIG. 24, in some embodiments, the sensing pixel array 2-202 included in the substrate 2-201 has a plurality of sensing pixels 2-203, and the sensing pixels 2-203 may be coupled to a signal processing circuit. ) (Not shown). In some embodiments, the number of sensing pixels 2-203 in the sensing pixel array 2-202 depends on the area of the optical sensing area 2-SR. Each sensing pixel 2-203 may include one or more photodectors. In some embodiments, the photodetector may include a photodiode, wherein the photodiode may include a three-layered photovoltaic material, a p-type semiconductor layer, an intrinsic layer, and an N-type semiconductor layer. The light is absorbed to generate excitons, and the excitons are divided into electrons and holes at the interface between the P-type semiconductor layer and the N-type semiconductor layer, thereby generating a current signal. In some embodiments, the photodetector may be a complementary metal-oxide-semiconductor (CMOS) image sensor, such as a front-side illumination (FSI) CMOS image sensor or a back-illuminated (FSI) back-side illumination (BSI) CMOS image sensor. In some other embodiments, the photodetector may also include a charged coupled device (CCD) sensor, an active sensor, a passive sensor, other suitable sensors, or a combination thereof. In some embodiments, the sensing pixel 2-203 can convert the received light signal into an electronic signal through a light detector, and process the electronic signal through a signal processing circuit.

In some embodiments, the sensing pixels 2-203 are arranged in an array to form a sensing pixel array 2-202. However, the cross-sectional view shown in FIG. 24 shows only one column of the sensing pixel array 2-202 and is located below the upper surface of the substrate 2-201. It should be noted that the number and arrangement of the sensing pixels 2-203 included in the sensing pixel array 2-202 shown in FIG. 24 are merely exemplary, and the embodiment of the present invention is not limited thereto. The sensing pixels 2-203 may be an array of any number of rows and columns or other arrangements.

In some embodiments, as shown in FIG. 24, a first light-shielding layer 2-204 is formed on a substrate 2-201. The first light-shielding layer 2-204 may include a light-shielding material, which has a light transmittance of less than 1% for a light below a wavelength range of 1200 nm.

In some embodiments, the first light-shielding layer 2-204 may include a metal material, such as tungsten (W), chromium (Cr), aluminum (Al), titanium (Ti), or the like. In this embodiment, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD) (eg, vacuum evaporation process, sputtering process) ), Pulsed laser deposition (PLD)), atomic layer deposition (ALD), other suitable deposition processes, or a combination thereof to blanketly form the first light-shielding layer 2-204 on the substrate 2-201. In some embodiments, the first light-shielding layer 2-204 may include a polymer material having light-shielding properties, such as epoxy resin, polyimide, and the like. In this embodiment, the first light-shielding layer 2-204 may be formed on the substrate 2-201 by, for example, spin-coating, chemical vapor deposition (CVD), other suitable methods, or a combination thereof. on. The thickness of the first light-shielding layer 2-204 formed by the above method ranges from about 0.3 micrometers (micrometers) to about 5 micrometers, and may be, for example, 2 micrometers. In some embodiments, the selected thickness of the first light-shielding layer 2-204 depends on the light-shielding ability of the material of the first light-shielding layer 2-204. For example, the light-shielding ability of the light-shielding material included in the first light-shielding layer 2-204 is different from its thickness. Negative correlation.

Referring to FIG. 25, according to some embodiments of the present invention, a patterning process may be performed on the first light-shielding layer 2-204 formed on the substrate 2-201. The patterned first light-shielding layer 2-204 has a plurality of first openings 2-205, and the first openings 2-205 have a first aperture A1 '. In some embodiments, the plurality of first openings 2-205 of the first light-shielding layer 2-204 formed on the substrate 2-201 exposes the plurality of sensing pixels 2-203 of the sensing pixel array 2-202. In some embodiments, the aforementioned patterning process may include a photolithography process and an etching process. The photolithography process may include, for example, photoresist coating (e.g., spin coating), soft baking, exposure patterns, post-exposure baking, photoresist development, cleaning and drying (e.g., hard baking), other suitable processes, or A combination of the above. The etching process may include, for example, a wet etching process, a dry etching process (such as reactive ion etching (RIE), plasma etching, ion milling), other suitable processes, or a combination thereof. The first pore size A1 'formed by the above method is in a range of about 0.3 micrometers to about 50 micrometers, for example, about 4 micrometers to about 5 micrometers.

It is worth noting that the first openings 2-205 and the sensing pixels 2-203 shown in FIG. 25 are correspondingly arranged in a one-to-one manner. However, in the other embodiments of the present invention, the first The openings 2-205 and the sensing pixels 2-203 can also be correspondingly set in a one-to-many or many-to-one manner. For example, one first opening 2-205 may expose more than two sensing pixels 2-203, or one sensing pixel 2-203 may be exposed from more than two first openings 2-205 (not shown) Out). FIG. 25 only illustrates an exemplary setting manner, and the present invention is not limited thereto. According to some embodiments of the present invention, by controlling the first aperture A1 'of the patterned first light-shielding layer 2-204, the range of the field angle of the incident light can be adjusted. In addition, by forming the first light-shielding layer 2-204 on the substrate 2-201, the sensor pixel array 2-202 can be prevented from receiving unnecessary light, and the light generated by the light incident on the optical sensor 2-200 can be prevented. Crosstalk, which improves the performance of the optical sensor 2-200.

Referring to FIG. 26A, according to some embodiments of the present invention, a first transparent dielectric layer 2-206 may be formed on the first light-shielding layer 2-204 and covered and exposed from the first openings 2-205 of the first light-shielding layer 2-204. Of the sensing pixel array 2-202. The first transparent medium layer 2-206 may include a UV-curable material, a thermosetting material, or a combination thereof. For example, the first transparent medium layer 2-206 may include, for example, poly (methyl methacrylate (PMMA), polyethylene terephthalate (PET), polyethylene naphthalate Glycolate (polyethylene naphthalate, PEN), polycarbonate (PC), perfluorocyclobutyl (PFCB) polymer, polyimide (PI), acrylic resin, epoxy resin (Epoxy resins) , Polypropylene (PP), Polyethylene (PE), Polystyrene (PS), Polyvinyl chloride (PVC), other suitable materials, or a combination thereof. In some embodiments In the process, spin-coating, dry film process, casting, bar coating, blade coating, roller coating, Wire bar coating, dip coating, chemical vapor deposition (CVD), other suitable methods, or a combination of the above on the first light-shielding layer 2-204 and its exposed sensing pixels Array 2-202 is formed A transparent dielectric layer 2-206. In some embodiments, the thickness T of the first transparent dielectric layer 2-206 formed by the above method is in a range of about 1 micrometer to about 100 micrometers, such as 50 micrometers. In some embodiments of the invention, the first transparent dielectric layer 2-206 formed by the above-mentioned process method has high yield and good quality. Moreover, by controlling the thickness T of the first transparent dielectric layer 2-206, the light passing process can be increased or decreased. The offset distance of the microlens 2-210 further improves the accuracy of the incident light angle that the sensing pixel array 2-202 can receive.

On the other hand, referring to FIG. 26B, according to other embodiments of the present invention, a first transparent dielectric sub-layer 2-206A may be formed on the sensing pixel array 2-202, and then a first light-shielding layer 2-204 may be formed on On the first transparent medium sublayer 2-206A, the first transparent medium sublayer 2-206A located on the sensing pixel array 2-202 is partially exposed from the first opening hole 2-205 of the first light shielding layer 2-204. Next, after the first light-shielding layer 2-204 is formed, a first transparent dielectric sub-layer 2-206B is formed on the first light-shielding layer 2-204. By controlling the thicknesses 2-T _A and 2-T _{B of the} first transparent medium sub-layers 2-206A and 206B, the distance of light shifting after passing through the microlens 2-210 can be increased or decreased (for example, by increasing the thickness 2-T _A , 2 -T _B can increase the distance that the light shifts after passing through the micro lens 2-210), thereby improving the accuracy of the incident light angle that the sensing pixel array 2-202 can receive.

27A to 27F are schematic cross-sectional views illustrating an optical sensor 2-200 according to some embodiments of the present invention. Specifically, FIGS. 27A to 27F illustrate a cross section of an optical sensor 2-200 in which the center line 2-C1 of at least one microlens 2-210 overlaps with the center line 2-C2 of the corresponding first opening 2-205. schematic diagram. As shown in FIG. 27A, in some embodiments, a patterned second light-shielding layer 2-207 is formed on the first transparent dielectric layer 2-206, wherein a plurality of first The two openings 2-208 correspond to the plurality of sensing pixels 2-203 exposed from the first light-shielding layer 2-204. It is worth noting that the second openings 2-208 and the sensing pixels 2-203 shown in FIG. 27A are correspondingly arranged in a one-to-one manner. However, the second openings 2-208 in other embodiments of the present invention The openings 2-208 and the sensing pixels 2-203 may also be correspondingly set in a one-to-many or many-to-one manner. For example, light entering a second opening 2-208 may be incident on more than two sensing pixels 2-203, or light entering more than two second openings 2-208 may be incident on the same pass Sensing pixels 2-203 (not shown). FIG. 27A only illustrates an exemplary setting manner, and the present invention is not limited thereto.

In addition, the material, forming method, thickness, and aperture of the patterned second light-shielding layer 2-207 are substantially the same as those of the first light-shielding layer 2-204, so details are not described herein. According to some embodiments of the present invention, by forming the second light-shielding layer 2-207 on the first transparent medium layer 2-206, the sensor pixel array 2-202 can be prevented from receiving unnecessary light, and can be prevented from incident into the optical system. The crosstalk generated by the light of the sensor 2-200 further improves the signal-to-noise ratio (S / N).

Referring to FIG. 27B, in some embodiments, the plurality of microlenses 2-210 included in the microlens layer 2-209 are correspondingly disposed in the plurality of second openings 2-208 of the second light-shielding layer 2-207, where These microlenses 2-210 are used to guide incident light through the first transparent medium layer 2-206 to the sensing pixels 2-203 exposed from the first openings 2-205. In some embodiments, the material of the micro-lens layer 2-209 may include a transparent photo-curable material or a thermo-curable material, and the formation method thereof is substantially the same as the formation method of the first transparent medium layer 2-206, so it will not be repeated here. In these embodiments, the formed microlens layer 2-209 may be subjected to a patterning process to control the radius of curvature R of the microlens 2-210. In other embodiments, the material of the microlens layer 2-209 may be a photoresist material. In this case, it may be achieved by including, for example, photoresist coating (for example, spin coating), soft baking, exposure pattern, post-exposure baking, photoresist development, cleaning and drying (for example, hard baking), other suitable Process, or a combination of the photolithography processes described above, to form the microlens layer 2-209. In these embodiments, the step of drying (for example, hard baking) in the photolithography process can use the effect of surface tension to form a hemispherical microlens 2-210, and the required microlens can be adjusted by controlling the heating temperature. The radius of curvature R of the lens 2-210. In some embodiments, the thickness of the formed microlenses 2-210 ranges from about 1 micrometer to about 50 micrometers. It is worth noting that the contour of the microlens 2-210 is not limited to a hemispherical shape. In the embodiment of the present invention, the contour of the microlens 2-210 can also be adjusted according to the required angle of incident light, for example, it can be aspheric ( aspheric).

Referring to FIG. 27C, in other embodiments, a plurality of microlenses 2-210 included in the microlens layer 2-209 may also be directly disposed on the first transparent medium layer 2-206 (that is, no microlens 2-210 is provided). Between the light-shielding layers), wherein the microlenses 2-210 are used to guide incident light through the first transparent medium layer 2-206 to the sensing pixels 2-203 exposed from the first openings 2-205. In some embodiments, the material and forming method of the microlens layer 2-209 are substantially the same as the material and forming method of the microlens layer 2-209 shown in FIG. 27B, and therefore will not be repeated here.

Referring to FIG. 27D, the structure shown is similar to the structure shown in FIG. 27C, and the difference is that the formation of the microlens layer 2-209 shown in FIG. 27D is a structure subsequent to that shown in FIG. 26B. In these embodiments, the material and forming method of the microlens layer 2-209 are substantially the same as the material and forming method of the microlens layer 2-209 shown in FIGS. 27B and 27C, and therefore will not be described again here. In addition, in other embodiments, a second light-shielding layer may be added between the microlenses 2-210 in the structure of FIG. 27D (such as the second light-shielding layer 2-207 in FIG. 27B).

Referring to FIG. 27E, the structure shown is similar to that shown in FIG. 27C, and the difference is that the microlenses 2-210 and the sensing pixels 2-203 can be correspondingly arranged in a many-to-one manner. As shown in FIG. 27E, the two or more microlenses 2-210 may correspond to a single sensing pixel 2-203 that can be exposed from the two first openings 2-205. It is worth noting that the quantity configuration provided in the embodiment of the present invention is only exemplary, and the corresponding manner of the micro lens 2-210 and the sensing pixel 2-203 can be adjusted according to the product design, and the present invention is not limited thereto. .

Referring to FIG. 27F, it is a partially enlarged view of FIG. 27B. According to some embodiments of the present invention, FIG. 27F illustrates the use of controlling the lateral offset distance (that is, the center line 2-C1 of a micro lens 2-210 and the corresponding center line 2-C2 of the first opening 2-205. Lateral offset distance), the radius of curvature R of the microlens 2-210, the thickness T of the first transparent dielectric layer 2-206, and the aperture A1 'of the first opening 2-205 of the first light-shielding layer 2-204, and adjust Permissible range of incident angle of light. In some embodiments, as shown in FIG. 27F, by controlling the lateral offset distance to be equal to zero (that is, the center line 2-C1 of the micro lens 2-210 overlaps with the center line 2-C2 of the corresponding first opening 2-205 ) And controlling the thickness T of the first transparent medium layer 2-206 and the aperture A1 ′ of the first opening hole 2-205, so that the sensing pixel 2-203 can receive incident light from an angle range of θ ± θ1. It can be understood that although the partial enlarged views of FIGS. 27C, 27D, and 27E are not shown here, the embodiment shown in FIGS. 27C, 27D, and 27E (that is, without the light shielding layer between the microlenses 2-210) is used for The mechanism for adjusting the incident angle range of the allowable light is almost the same as the embodiment shown in FIG. 27B (that is, the light shielding layer between the microlenses 2-210), so it will not be repeated here.

According to some embodiments of the present invention, the main angle θ is an angle between the incident light and the upper surface of the sensing pixel 2-203, and the tolerance ± θ1 is an angle shifted clockwise and counterclockwise from the main angle θ θ1. For example, when the lateral offset distance is equal to zero, the main angle θ may be 90 degrees, and other parameters such as the thickness T of the first transparent dielectric layer 2-206 and the first opening of the first light-shielding layer 2-204 may be controlled. The aperture A1 ′) of 2-205 allows the tolerance ± θ1 to be ± 5 degrees. Therefore, the sensing pixels 2-203 in this example can receive light incident from an angular range of 85 degrees to 95 degrees. In some embodiments, the main angle θ mainly depends on the lateral offset distance, the tolerance ± θ1 mainly depends on the aperture of the first opening, and the thickness T of the first transparent medium layer 2-206 can mainly adjust the sensing pixel 2 -203 Accuracy of receivable incident angle.

28A to 28C are schematic cross-sectional views illustrating an optical sensor 2-200 according to other embodiments of the present invention. Specifically, FIGS. 28A to 28C show that the center line 2-C1 including at least one micro lens 2-210 and the corresponding center line 2-C2 of the first opening 2-205 have a lateral offset distance 2- A schematic cross-sectional view of S's optical sensor 2-200. As shown in FIG. 28A, in some embodiments, a patterned second light-shielding layer 2-207 is formed on the first transparent dielectric layer 2-206, wherein a plurality of first The two openings 2-208 correspond to the plurality of sensing pixels 2-203 exposed from the first light-shielding layer 2-204. It is worth noting that the embodiment shown in FIG. 28A is different from the embodiment shown in FIG. 27A in that the second opening hole 2-208 and the sensing pixel 2-203 in FIG. 28A are in a one-to-one manner. Set diagonally. In other words, the center line 2-C1 of one of the microlenses 2-210 of the microlens layer 2-209 has a lateral offset distance 2-S from the center line 2-C2 of the corresponding first opening 2-205. (See Figure 28B for collocation). However, in other embodiments of the present invention, the second openings 2-208 and the sensing pixels 2-203 can also be arranged obliquely in a one-to-many or many-to-one manner (not shown). FIG. 28A only illustrates an exemplary setting manner, and the present invention is not limited thereto.

Referring to FIG. 28B, in some embodiments, a plurality of microlenses 2-210 included in the microlens layer 2-209 are disposed in a plurality of second openings 2-208 of the second light-shielding layer 2-207 to be inclined. The direction corresponds to the sensing pixel 2-203. The microlenses 2-210 are used to guide oblique incident light to penetrate the first transparent medium layer 2-206 and to be incident on the sensing pixels 2-203 exposed from the first openings 2-205. In some embodiments, the material, forming method, and outline of the microlens layer 2-209 shown in FIG. 28B are substantially the same as those of the microlens layer 2-209 shown in FIG. 27B, so they are not repeated here. In other embodiments, a plurality of microlenses 2-210 included in the microlens layer 2-209 can also be directly disposed on the first transparent medium layer 2-206 (that is, there is no light shielding between the microlenses 2-210. Layer) (not shown) corresponding to the sensing pixels 2-203 in an oblique direction. The microlenses 2-210 are used to guide oblique incident light to pass through the first transparent medium layer 2-206 and enter the sensing pixels 2-203 under the first opening hole 2-205. In these embodiments, the material and forming method of the microlens layer 2-209 are substantially the same as the material and forming method of the microlens layer 2-209 shown in FIG. 27C, so they are not repeated here.

Referring to FIG. 28C, it is a partially enlarged view of FIG. 28B. According to some embodiments of the present invention, FIG. 28C illustrates the use of controlled lateral offset distance 2-S, the radius of curvature R of the microlens 2-210, the thickness T of the first transparent medium layer 2-206, and the first light-shielding layer 2 The aperture A1 'of the first opening 2-205 of -204 adjusts the range of incident angle of the allowable light. In some embodiments, as shown in FIG. 28C, by controlling the lateral offset distance 2-S (that is, the center line 2-C1 of at least one of the microlenses 2-210 of the microlens layer 2-209 and the corresponding first Lateral offset distance of the center line 2-C2 of the opening 2-205) and controlling the thickness T of the first transparent dielectric layer 2-206 and the aperture A1 'of the first opening 2-205, so that the sensing pixel 2-203 It can receive incident light from an angle range of θ '± θ2.

According to some embodiments of the present invention, the main angle θ ′ is an angle between the incident light and the upper surface of the sensing pixel 2-203, and the tolerance ± θ2 is shifted clockwise and counterclockwise from the main angle θ ′. Angle θ2. For example, the lateral offset distance can be controlled so that the main angle θ ′ can be 45 degrees, and other parameters such as the thickness T of the first transparent dielectric layer 2-206 and the first opening of the first light-shielding layer 2-204 can be controlled. The hole diameter A1 ′) of the hole 2-205 is such that the tolerance ± θ2 is ± 5 degrees. Therefore, the sensing pixels 2-203 in this example can receive light incident from an angular range of 40 degrees to 50 degrees. In some embodiments, the main angle θ ′ is mainly determined by the lateral offset distance 2-S, the tolerance ± θ2 is mainly determined by the aperture A1 ′ of the first opening, and the thickness T of the first transparent dielectric layer 2-206 is mainly determined by The accuracy of the incident angle that the sensing pixel 2-203 can receive can be adjusted. It is worth noting that the angular range provided by the embodiments of the present invention is merely exemplary, and the present invention is not limited thereto. The embodiment of the present invention may control the structure to adjust the above-mentioned parameters according to requirements.

According to the embodiments shown in FIG. 27A to FIG. 27F and FIG. 28A to FIG. 28C, in the optical sensor 2-200 provided by the present invention, microlenses 2-210 with different lateral offset distances can be integrated with the first lens Configuration of the holes 2-205 and / or other parameters (such as the aperture A1 'of the first opening 2-205, the thickness T of the first transparent dielectric layer 2-206, and / or the radius of curvature R of the microlens 2-210) For example, the structure shown in FIG. 27B and FIG. 28B can be integrated into the optical sensor 2-200. Through the configuration of the structure in the optical sensor 2-200 provided by the present invention, the areas of the optical sensing area 2-SR and the target contact area 2-CR need not be configured in a one-to-one manner (for example, the optical sensing area The area of the 2-SR may be smaller than the area of the target contact area 2-CR) (as shown in FIG. 23), and the technical effect of reducing the area of the optical sensor 2-200 and obtaining good image quality is achieved. It can be understood that the plurality of microlenses 2-210 may have the same or different radii of curvature R, and the first openings 2-205 may also have the same or different apertures A1 '.

FIGS. 29 to 32 are some other embodiments according to the present invention. For example, based on the structures shown in FIG. 27B, FIG. 27C, FIG. 27D, FIG. 27E, and FIG. 28B, an optical sensor 2-200 including additional structures is shown. Schematic cross-section. Referring to FIG. 29, according to some other embodiments of the present invention, a protective layer 2-800 covering the microlens layer 2-209 and the second light-shielding layer 2-207 compliantly is shown. It can be understood that the protective layer 2-800 can also be formed on the structure as shown in FIG. 27C, FIG. 27D, and FIG. 27E. The micro-lens 2-210 does not have a light-shielding layer, so the protective layer 2-800 A first transparent dielectric layer 2-206 (not shown) directly under the microlens layer 2-209. In some embodiments, the protective layer 2-800 may be formed of silicon dioxide and may be plasma-enhanced CVD (PECVD), remote plasma-enhanced CVD (RPECVD), other similar methods, or a combination thereof to deposit silicon dioxide on the microlens layer 2-209 and the second light-shielding layer 2-207. The protective layer 2-800 formed of silicon dioxide does not affect the ability of the microlens layer 2-209 to guide light. Furthermore, the protective layer 2-800 can effectively protect the microlens layer 2-209, so as to prevent the microlens layer 2-209 from being damaged during the subsequent packaging process.

Referring to FIG. 30, according to some other embodiments of the present invention, a filter layer 900 is shown between the first transparent dielectric layer 2-206 and the second light-shielding layer 2-207 and / or the microlens 2-210. In some embodiments, a part of the structure of the optical sensor 2-200 formed in FIG. 26A may be continued to form the structure shown in FIG. 30. In other embodiments, a part of the structure of the optical sensor 2-200 formed in FIG. 26B may be continued to form the filter layer 2-900 (not shown) shown in FIG. 30. After forming the first transparent medium layer 2-206 (or the first transparent medium sublayer 2-206A), a filter layer 2-900 may be formed on the first transparent medium layer 2-206, and a filter layer is formed After 2-900, a second light-shielding layer 2-207 and a microlens layer 2-209 are formed. As mentioned above, in other embodiments, the second light-shielding layer 2-207 may not be provided.

In addition, in some embodiments, the filter layer 2-900 may be an infrared filter (IRC). Visible light has a high transmittance to the infrared filter layer, and infrared light has a low transmittance to it. In some embodiments, a filter layer 2-900 (such as an infrared filter layer) may be provided between the first transparent medium layer 2-206 and the second light-shielding layer 2-207 and / or the microlens 2-210. Correct the color shift phenomenon of the optical sensor 2-200 and reduce the interference of infrared rays.

Referring to FIG. 31A, according to some other embodiments of the present invention, a second transparent dielectric layer 2-001 disposed between the first transparent dielectric layer 2-206 and the second light-shielding layer 2-207 is shown, and A patterned third light-shielding layer 2-002 between a transparent dielectric layer 2-206 and the second transparent dielectric layer 2-001. In some embodiments, a part of the structure of the optical sensor 2-200 formed in FIG. 26A may be continued to form the structure shown in FIG. 31A. On the other hand, referring to FIG. 31B, the structure shown is similar to the structure shown in FIG. 31A. The difference shown in FIG. 31B is that a plurality of microlenses 2-210 included in the microlens layer 2-209 are directly disposed on the structure. On the first transparent medium layer 2-206 (that is, without the light-shielding layer between the microlenses 2-210).

After the first transparent dielectric layer 2-206 is formed, a patterned third light shielding layer 2-002 may be formed on the first transparent dielectric layer 2-206. In some embodiments, the material, forming method, thickness, and aperture of the patterned third light-shielding layer 2-002 are substantially the same as the patterned first light-shielded layer 2-204 and the patterned second light-shielded layer 2-207, So I won't repeat them here. In some embodiments, the material and forming method of the second transparent dielectric layer 2-001 are substantially the same as those of the first transparent dielectric layer 2-206 described above, so they will not be repeated here. The thickness T of the second transparent dielectric layer 2-001 is in a range of about 1 micrometer to about 100 micrometers, and may be, for example, 30 micrometers.

According to some embodiments of the present invention, by forming a third light-shielding layer 2-002 on the first transparent dielectric layer 2-206, the sensing pixel array 2-202 can be prevented from receiving unnecessary light, and can be prevented from incident into the optical system. The crosstalk produced by the light of the sensor 2-200 further improves the signal-to-noise ratio (S / N). For example, as shown in FIGS. 31A and 31B, the center line 2-C2 of the at least one first opening 2-205 and the center line 2 of the corresponding third opening 2-003 in the third light-shielding layer 2-002. -C3 and the center line 2-C1 of the corresponding microlens 2-210 overlap. In FIGS. 31A and 31B, the light 2-L1 is the incident light that can be received by the sensing pixel 2-203, and the light 2-L2 is outside the range of the incident angle that is allowed to enter the sensing pixel 2-203. Light. Therefore, the light 2-L2 will be absorbed or blocked by the third light-shielding layer 2-002 and cannot be incident on the sensing pixel 2-203.

Referring to FIG. 32, the structure shown in FIG. 32 is similar to the structure shown in FIG. 31A. The difference between FIG. 32 and FIG. 31A is that at least one center line 2-C2 of the first opening 2-205, one of the third light-shielding layer 2-002 corresponds to the center line 2-C3 of the third opening 2-1003, And the center lines 2-C1 of the corresponding microlenses 2-210 do not overlap. In FIG. 32, the light ray 2-L1 is incident light that can be received by the sensing pixel 2-203, and the light ray 2-L2 is light from outside the incident angle range that is allowed to be incident on the sensing pixel 2-203. Therefore, the light 2-L2 will be absorbed or blocked by the third light-shielding layer 2-002 and cannot be incident on the sensing pixel 2-203. According to some embodiments of the present invention, the structure shown in FIG. 32 may facilitate the sensing pixel 2-203 to receive light incident at an oblique angle. Furthermore, by forming a third light-shielding layer 2-002 on the first transparent dielectric layer 2-206, it is possible to prevent the sensing pixel array 2-202 from receiving unnecessary light, and prevent incident light on the optical sensor 2-200. Crosstalk caused by light, which in turn improves the signal-to-noise ratio (S / N).

It is worth noting that although various additional structures included in the optical sensor 2-200 shown in FIGS. 29 to 32 are described in different embodiments, these additional structures can be matched with each other and integrated as needed For a single optical sensor 2-200.

FIG. 33 is a schematic cross-sectional view of an optical sensing system 2-100 showing an exemplary structure of a display 2-300 according to some embodiments of the present invention. In some embodiments, the display 2-300 may include an organic light emitting diode display or a micro light emitting diode display. It is worth noting that in order to concisely describe the embodiment of the present invention and highlight its features, the packaging structure of the optical sensor 2-200 and the display 2-300 shown in FIG. 33 will be implemented as shown in FIGS. 34 and 35. Detailed description in the example. As shown in FIG. 33, the display 2-300 includes a first light-transmitting material 2-1201, a thin-film transistor (TFT) layer 2-1202 on the first light-transmitting material 2-1201, and a thin-film transistor layer. The cathode layer 2-1203 on the 2-1202, the light emitting layer 2-1204 on the cathode layer 2-1203, the anode layer 2-1205 on the light emitting layer 2-1204, and the second transparent layer on the anode layer 2-1205 Light material 2-1206, polarizing plate 2-1207 on second light-transmitting material 2-1206, adhesive layer 2-1208 on polarizing plate 2-1207, and light-transmitting cover plate on adhesive layer 2-1208 2-1209. In some embodiments, the display 2-300 further includes an aperture 2-1210, which is disposed in the cathode layer 2-1203 and is located above the thin film transistor layer 2-1202. Through the setting of the aperture 2-1210, the light emitted from the light-emitting layer 2-1204 can be reflected by the target 2-F and then incident on the optical sensor 2-200 without being blocked by the cathode layer 2-1203. On the other hand, the cathode layer 2-1203 formed of a transparent electrode material can also be used directly, so that the light reflected by the target 2-F enters the optical sensor 2-200 without being shielded. Of course, the structure of the OLED display described above, for example, may increase or decrease or change the material layer as the technology evolves. It should be noted that the concept of the present invention does not change accordingly.

In some embodiments, the first transparent material 2-1201, the second transparent material 2-1206, and the transparent cover plate 2-1209 may include, for example, glass, quartz, sapphire, or transparent polymer. Objects, etc., which allow light to pass through. In some embodiments, the cathode layer 2-1203 and the anode layer 2-1205 may be transparent electrode materials (such as indium tin oxide), so that the light incident on the optical sensor 2-200 after being reflected by the target 2-F is not reflected. Will be covered. In some embodiments, depending on the type of the display 2-300, the light emitting layer 2-1204 may include an organic light emitting layer or a micro light emitting diode layer. In the optical sensing system 2-100 provided by the present invention, the light emitting layer 2-1204 in the display 2-300 can be used as a light source, and the light emitted by it will illuminate a target that is in contact with the upper surface of the transparent cover 2-1209. Object 2-F. After the light is reflected by the target 2-F, the light passes through the display 2-300 and enters the optical sensor 2-200.

FIG. 34 to FIG. 35 are schematic cross-sectional views illustrating optical sensing systems 2-100 including different packaging structures according to some other embodiments of the present invention. However, in order to briefly describe the embodiment of the present invention and highlight its features, the specific structure of the display 2-300 is not shown in FIGS. 34 to 35. In some embodiments, the optical sensing system 2-100 provided by the present invention may be formed by a chip-on-board (COB) process. Specifically, referring to FIG. 34, in some embodiments, the optical sensor 2-200 is bonded to the circuit board 2-1303, and the conductive pad 2 in the substrate 2-201 of the optical sensor 2-200 is bonded to the optical sensor 2-200 through the wire 2-1302. -1301 is connected to the circuit board 2-1303. Next, a frame 2-1305 is formed by applying an adhesive material on the circuit board 2-1303 and surrounding the optical sensor 2-200 by a dispensing process, and the optical sensor 2-200 and the circuit board 2 below it are formed by the frame 2-1305. -1303 is adhered to the lower surface of the display 2-300 (eg, the first light-transmitting material 2-1201 of the display 2-300) together. In some embodiments, the wires 2-1302 may be formed of aluminum, copper, gold, other suitable conductive materials, the alloys described above, or a combination thereof. In some embodiments, the adhesive material forming the frame may be a photo-curable material, a heat-curable material, or other similar materials. In some embodiments, the circuit board 2-1303 may be a flexible printed circuit (FPC), and the flexible circuit board 2-1303 may be disposed on the reinforcement board 2-1304 (for example, a metal reinforcement board). Above.

In other embodiments, as shown in FIG. 35, an embodiment of the present invention also provides another packaging structure. In some embodiments, after the optical sensor 2-200 is bonded to the circuit board 2-1303, a frame 2-1401 (such as a plastic frame) is disposed on the circuit board 2-1303 and surrounds the optical sensor 2-200, and is coated and adhered. The material 2-1402 is inside the frame 2-1401 and surrounds the optical sensor 2-200, and the optical sensor 2-200 and the circuit board 2-1303 below it are adhered to the display 2-300 (for example, display 2) through an adhesive layer 2-1403. -300 of the first light-transmitting material 2-1201).

In the exemplary package structure shown in FIGS. 34 and 35, the display 2-300 may include an organic light emitting diode display or a micro light emitting diode display. Through the configuration in which the optical sensor 2-200 is disposed under the display 2-300 included in some embodiments of the present invention, the display 2-300 can be used as a light source, and the light emitted by the display 2-300 will be in contact with the upper surface of the display 2-300. The target 2-F, the light will be reflected by the target 2-F and incident on the optical sensor 2-200. It is worth noting that the optical sensor 2-200 in the optical sensing system 2-100 can also be used with other light sources, so the embodiments of the present invention are not limited thereto. Furthermore, the optical sensing system 2-100 provided by some embodiments of the present invention can effectively improve the reliability through the aforementioned packaging structure.

FIG. 36 is a schematic diagram illustrating that the optical sensing system 2-100 receives incident light 2-L1, 2-L2, 2-L3 at different angles according to some embodiments of the present invention. In some embodiments, as shown in FIG. 36, when the target object 2-F (such as a fingerprint) contacts the transparent cover 2-1209 of the display 2-300, the light emitted by the light-emitting layer 2-1204 will be targeted by the target. The object 2-F reflects and is incident at different angles (for example, light rays 2-L1, 2-L2, 2-L3) to the optical sensor 2-200 disposed below the display 2-300. The light rays 2-L1 and 2-L3 are light incident at an oblique angle, and the light rays 2-L2 are light incident at a normal angle. In the optical sensing system 2-100 provided by the present invention, the configuration and / or other parameters of the microlens 2-210 and the first opening 2-205 with different lateral offset distances can be integrated (such as the first opening The arrangement of the aperture A1 'of 2-205, the thickness T of the first transparent medium layer 2-206, and / or the radius of curvature R of the microlens 2-210. Through the configuration of the structure in the optical sensor 2-200 provided by the present invention, the areas of the optical sensing area 2-SR and the target contact area 2-CR need not be configured in a one-to-one manner (for example, the optical sensing area The area of the 2-SR can be smaller than the area of the target contact area 2-CR), and the technical effect of reducing the area of the optical sensor 2-200 and obtaining good image quality is achieved. Moreover, the display 2-300 included in the optical sensing system 2-100 can provide the required light source, so no additional independent light source is needed.

In summary, the optical sensing system provided by the embodiment of the present invention includes a design using a display (such as a screen panel of a mobile device) as a light source. Furthermore, in the optical sensing system, the configuration and / or other parameters of the first openings of the microlens layer and the first light-shielding layer included in the optical sensor with different lateral offset distances (such as the aperture of the first opening) , The thickness of the first transparent medium layer, and / or the radius of curvature of the microlenses), so that the sensing pixels can receive light from different incident angle ranges. Accordingly, light rays incident from a specific range of field angles can be incident on the sensing pixels. In addition, since the optical sensing system provided by the present invention can receive light incident at an oblique angle, the area of the optical sensing area 2-SR can be smaller than the area of the target contact area 2-CR, thereby reducing the area of the optical sensor and Achieve technical effects of good image quality.

37 and 38 are schematic cross-sectional views illustrating the optical sensor 2-200 'at various stages of the process according to other embodiments of the present invention. 39A and 39B are schematic cross-sectional views illustrating an optical sensor 2-200 'according to other embodiments of the present invention. FIG. 40 is a partially enlarged schematic diagram illustrating a cross section of a configuration of a microlens and a sensing pixel according to other embodiments of the present invention. The optical sensor 2-200 'may be similar to the optical sensor of the above embodiment (for example, the optical sensor 2-200), and the difference between the optical sensor 2-200' and the optical sensor of the above embodiment will be discussed in the following paragraphs.

Referring to FIG. 37, in some embodiments, the sensing pixel array 2-202 included in the substrate 2-201 has a plurality of sensing pixels 2-203, and two adjacent sensing pixels 2-203 may be disposed between There are circuit structures 2-1601, such as: memory devices or signal processing circuits. In some embodiments, the number of sensing pixels 2-203 in the sensing pixel array 2-202 depends on the area of the optical sensing area 2-SR. The width P of the sensing pixels 2-203 depends on the design requirements of the optical sensing system and can be designed in the range of 3 to 10 microns.

It is worth noting that the number and arrangement of the sensing pixels 2-203 included in the sensing pixel array 2-202 shown in FIG. 37 are substantially the same as those shown in FIG. 24, so they are not included here. More details.

Referring next to FIG. 38, according to other embodiments of the present invention, a first transparent dielectric layer 2-206 may be directly formed on a substrate 2-201 and cover the sensing pixel array 2-202. In this embodiment, the sensing pixel array 2-202 is not covered by the light shielding layer. The material and the formation method of the first transparent dielectric layer 2-206 are substantially the same as those of the first transparent dielectric layer 2-206 shown in FIG. 26A, so they are not repeated here. According to other embodiments of the present invention, the selection of the material of the first transparent dielectric layer 2-206 may be determined according to the required refractive index. In some embodiments, the thickness T of the first transparent dielectric layer 2-206 formed by the above method is in a range of about 1 micrometer to about 100 micrometers, and may be, for example, 50 micrometers. By controlling the thickness T of the first transparent medium layer 2-206, the offset distance of the light after passing through the microlens 2-210 can be increased or decreased, thereby improving the accuracy of the incident light angle that the sensing pixel array 2-202 can receive.

39A, a schematic cross-sectional view of an optical sensor 2-200 'including a centerline 2-C1 of at least one microlens 2-210 and a corresponding centerline 2-C2 of a corresponding sensing pixel 2-203 is shown. In these embodiments, a plurality of microlenses 2-210 included in the microlens layer 2-209 are correspondingly disposed in a plurality of openings of the second light-shielding layer 2-207, and these microlenses 2-210 are used to guide The incident light penetrates the first transparent medium layer 2-206 to the sensing pixels 2-203. In these embodiments, the formed microlens layer 2-209 may be subjected to a patterning process to control the focal length f of the microlens 2-210. In this embodiment, the diameter D of the microlens 2-210 can be adjusted in the range of 10 micrometers to 50 micrometers, for example, 30 micrometers, according to the image capturing resolution. According to some embodiments of the present invention, the ratio of the width P of the sensing pixel 2-203 to the diameter D of the microlens 2-210 can be adjusted in the range of 0.06 to 1, so as to effectively improve the image capturing resolution. In some embodiments, the material and formation method of the microlens layer 2-209 are substantially the same as those of the microlens layer 2-209 shown in FIG. 27B, and therefore will not be repeated here. Further, in some embodiments, the optical sensor 2-200 'may not have the second light-shielding layer 2-207. That is, there is no light shielding layer between the microlenses 2-210.

39B, the difference between the embodiment shown in FIG. 39A and the embodiment shown in FIG. 39A lies in that the micro lens 2-210 and the sensing pixel 2-203 in FIG. 39B correspond obliquely in a one-to-one manner. Settings. In other words, the center line 2-C1 of one of the microlenses 2-210 of the microlens layer 2-209 has a lateral offset distance 2-S from the center line 2-C2 of the corresponding sensing pixel 2-203. However, in other embodiments of the present invention, the microlenses 2-210 and the sensing pixels 2-203 can also be arranged obliquely in a one-to-many or many-to-one manner (not shown). FIG. 39B only illustrates an exemplary setting manner, and the present invention is not limited thereto.

According to the embodiment shown in FIGS. 39A to 39B, the optical sensor 2-200 'includes a substrate 2-201, and the sensing pixel array 2-202 is disposed on the substrate 2-201, where the sensing pixel array 2-202 includes It has a plurality of sensing pixels 203. The first transparent dielectric layer 2-206 is located above the sensing pixel array 2-202. The microlens layer 2-209 is located above the first transparent medium layer 2-206 and includes a plurality of microlenses 2-210. The microlens 2-210 guides the incident light through the first transparent medium layer 2-206 to the sensing pixel 2-203. In some embodiments, the width P of the sensing pixel 203 is between micrometers and 10 micrometers, and the diameter D of the microlens 2-210 is between 10 micrometers and 50 micrometers. In addition, the second light-shielding layer 2-207 is disposed above the first transparent medium layer 2-206, and the plurality of microlenses 2-210 of the micro-lens layer 2-209 are correspondingly disposed on the second light-shielding layer 2-207. Multiple openings. As mentioned before, in other embodiments, the optical sensor 2-200 'may not have the second light-shielding layer 2-207. That is, there is no light shielding layer between the microlenses 2-210.

In the optical sensor 2-200 'provided by the present invention, the configuration and / or other parameters of the microlens 2-210 and the sensing pixel 2-203 with different lateral offset distances can be integrated (for example, the sensing pixel 2-203 (For example, the width P), the thickness T of the first transparent medium layer 2-206, and / or the focal length f of the microlens 2-210, for example, the structures shown in FIGS. 39A and 39B can be integrated into optical Sensor 2-200 '. Through the configuration of the structure in the optical sensor 2-200 'provided by the present invention, the area of the optical sensing area 2-SR and the target contact area 2-CR need not be configured in a one-to-one manner (for example, optical sensing The area of the area 2-SR may be smaller than the area of the target contact area 2-CR), and the technical effect of reducing the area of the optical sensor 2-200 and obtaining good image quality is achieved.

Referring next to FIG. 40, it is a partially enlarged view of FIG. 39A. According to some embodiments of the present invention, FIG. 40 shows a lateral offset distance 2-S of the center line 2-C1 of the control microlens 2-210 and the center line 2-C2 of the corresponding sensing pixel 2-203, The width P of the sensing pixel 2-203, the refractive index n of the first transparent medium layer 2-206, the thickness T of the first transparent medium layer 2-206, the focal length f of the microlens 2-210, The diameter D adjusts the range of incident angles of the allowed light (for example, light incident at an oblique angle). Specifically, if the parameters mentioned, the incident angle θ _i of the incident light L and the refraction angle θ _{r of the} incident light L conform to the following relationship:

sinθ _i = n * sinθ _r (Equation 1)

f = ((D / 2) ² + T ² ) ^1/2 (Equation 2)

P / 2 = f * tanθ _r (Equation 3),

Then, the microlens 2-210 can be used to guide the incident light L through the first transparent medium layer 2-206 and then directly incident on the sensing pixel 2-203 having a width P that conforms to the above relationship, so as to achieve no additional light shielding In the case of a layer, the sensing pixels 2-203 can receive light incident from a specific range of field angles. Furthermore, the above configuration can effectively reduce the thickness of the optical sensor 2-200 '.

It is worth noting that various additional structures (such as the protective layer 800 and the filter layer 900) included in the optical sensor 2-200 shown in FIGS. 29 and 30 can also be applied to the optical sensor 2-200 '. (Not shown), and these additional structures can be matched with each other and integrated into a single optical sensor 2-200 'as needed. In addition, the optical sensor 2-200 'can also be combined with the display 2-300 shown in FIG. 33 and the package structure (not shown) shown in FIGS. 34 and 35, which will not be repeated here. By arranging the optical sensor 2-200 ′ included in the above embodiment of the present invention under the display, the display can be used as a light source, and the light emitted by it will illuminate a target that is close to or in contact with the upper surface of the display. It will be reflected by the target and incident on the optical sensor 2-200 '. It is worth noting that the optical sensor 2-200 'can also be used with other light sources, for example, an independent light source (for example, an LED light source) disposed on the side or obliquely above the optical sensor 2-200'. Therefore, the embodiments of the present invention are not Not limited to this. Furthermore, the combination of the optical sensor 2-200 'and the display provided by some embodiments of the present invention can effectively improve the reliability through the aforementioned packaging structure.

In summary, according to the embodiment of the present invention, the configuration of the microlens and the sensing pixel with a smaller size according to the above-mentioned relationship can realize that the sensing pixel can receive Incidence of light in a specific range of field of view and can reduce the thickness of the optical sensor. By arranging the circuit structure between sensing pixels having a smaller size, the integration density of the optical sensor can be effectively improved. The optical sensor provided by the embodiment of the present invention may use a display (such as a screen panel of a mobile device) as a light source design. Furthermore, the configuration and / or other parameters of the microlens layer and the sensing pixel included in the optical sensor with different lateral offset distances (such as the size of the sensing pixel, the refractive index of the first transparent medium layer, and the first transparent medium) The thickness of the layer, the focal length of the microlens, and the diameter of the microlens) can be configured so that the sensing pixels receive light from different ranges of incident angles. Accordingly, light rays incident from a specific range of field angles can be incident on the sensing pixels. Since the optical sensing system provided by the present invention can receive light incident at an oblique angle, the area of the optical sensing area 2-SR can be smaller than the area of the target contact area 2-CR, so that the area of the optical sensor can be reduced and good Technical effects of image quality.

It is worth noting that although the exemplary embodiments disclosed in the examples discussed herein (such as the first embodiment and the second embodiment) relate to a fingerprint sensing system applied to a mobile device, the technology provided by the present invention may also It can be applied to other types of sensors, not just sensor devices that detect fingerprints. For example, it can also be used to detect epidermis / dermis fingerprint images, subcutaneous veins images, and measure other biometric images or information (such as blood oxygen level, heartbeat) ), Etc.) is not limited to the scope disclosed in the above embodiments.

The foregoing summarizes several embodiments, so that those skilled in the art to which the present invention pertains can better understand the viewpoints of the embodiments of the present invention. Those skilled in the art to which the present invention pertains should understand that they can design or modify other processes and structures based on the embodiments of the present invention to achieve the same purpose and / or advantages as the embodiments described herein. Those skilled in the technical field to which the present invention belongs should also understand that such equivalent processes and structures do not depart from the concept and scope of the present invention, and they can make various modifications without departing from the concept and scope of the present invention. Various changes, substitutions and replacements.

Claims

An optical sensor, characterized in that the optical sensor includes:

A substrate with multiple sensing pixels arranged in an array;

A first transparent dielectric layer located above the substrate; and

A plurality of microlenses arranged in an array and located on or above the first transparent medium layer, wherein the plurality of microlenses respectively enter a plurality of parallel forward incident light from the outside into the plurality of microlenses, Is incident on a part or all of the total number of the sensing pixels through the first transparent medium layer, and a plurality of parallel oblique incident light entering the microlenses from the outside is incident on the A part or all of the total number of the sensing pixels are external, thereby sensing an image of a target, the target generating the plurality of parallel forward incident light and the plurality of parallel oblique incident light The plurality of parallel forward incident light is parallel to the plurality of optical axes of the plurality of microlenses, and each of the parallel oblique incident light forms an angle with each of the optical axes.
The optical sensor of claim 1, wherein the angle is between 5 and 90 degrees.
The optical sensor according to claim 1, wherein the optical sensor further comprises:

A dielectric layer group located on the substrate and covering the plurality of sensing pixels;

A first light-shielding layer is located on the dielectric layer group and has a plurality of first light holes. The plurality of parallel forward incident light passes through the plurality of first light holes. Obliquely incident light does not pass through the plurality of first light holes; and

An optical filter layer is located on the first light-shielding layer, and performs a wavelength filtering action on the plurality of parallel forwardly incident light and the plurality of parallel obliquely incident light, wherein the first transparent medium A layer is located on the optical filter layer, and the plurality of microlenses are located on the first transparent medium layer.
The optical sensor according to claim 1, wherein the optical sensor further comprises:

A dielectric layer group located on the substrate and covering the plurality of sensing pixels;

A first light-shielding layer is located on the dielectric layer group and has a plurality of first light holes. The plurality of parallel forward incident light passes through the plurality of first light holes. Obliquely incident light does not pass through the plurality of first light holes; and

An optical filter plate is located above the plurality of microlenses, and performs a wavelength filtering action on the plurality of parallel forward incident lights and the plurality of parallel oblique incident lights. The plurality of microlenses Located on the first transparent medium layer.
The optical sensor according to claim 1, wherein the optical sensor further comprises:

A lens light-shielding layer is located on the first transparent medium layer and in a plurality of gaps between the plurality of microlenses to shield a plurality of parallel second oblique directions from the outside into the plurality of gaps. The incident light is prevented from entering the first transparent medium layer and the plurality of sensing pixels.
The optical sensor according to claim 1, wherein the optical sensor further comprises:

A dielectric layer group located on the substrate and covering the plurality of sensing pixels;

A first light-shielding layer is located on the dielectric layer group and has a plurality of first light holes. The plurality of parallel forward incident light passes through the plurality of first light holes. Obliquely incident light does not pass through the plurality of first light holes;

An optical filter layer is located on the first light-shielding layer, and performs a wavelength filtering action on the plurality of parallel forwardly incident light and the plurality of parallel obliquely incident light, wherein the first transparent medium A layer is located on the optical filter layer, and the plurality of microlenses are located on the first transparent medium layer; and

A lens light-shielding layer is located on the first transparent medium layer and in a plurality of gaps between the plurality of microlenses to shield a plurality of parallel second oblique directions from the outside into the plurality of gaps. The incident light is prevented from entering the first transparent medium layer and the plurality of sensing pixels.
The optical sensor according to claim 1, wherein the optical sensor further comprises:

A second light-shielding layer, which is located on the first transparent medium layer and has a plurality of second light holes, and the plurality of optical axes respectively pass through the plurality of second light holes; and

A second transparent medium layer is located on the second light shielding layer, and the plurality of microlenses are located on the second transparent medium layer. One of the plurality of microlenses is defined as a target microlens, so The optical axis of the target microlens is defined as a target optical axis, and the sensing pixel through which the target optical axis passes is defined as a target sensing pixel. A plurality of microlenses are defined as adjacent microlenses, and the second light-shielding layer shields a plurality of parallel third oblique incident light entering the adjacent microlenses from the outside from entering the first transparent medium layer and all The target sensing pixel.
The optical sensor according to claim 1, wherein the optical sensor further comprises:

A dielectric layer group located on the substrate and covering the plurality of sensing pixels;

A first light-shielding layer is located on the dielectric layer group and has a plurality of first light holes. The plurality of parallel forward incident light passes through the plurality of first light holes. Obliquely incident light does not pass through the plurality of first light holes;

An optical filter layer is located on the first light-shielding layer, and performs a wavelength filtering action on the plurality of parallel forwardly incident light and the plurality of parallel obliquely incident light, wherein the first transparent medium A layer is located on the optical filter layer;

A second light-shielding layer, which is located on the first transparent medium layer and has a plurality of second light holes, and the plurality of optical axes respectively pass through the plurality of second light holes; and

A second transparent medium layer is located on the second light shielding layer, and the plurality of microlenses are located on the second transparent medium layer. One of the plurality of microlenses is defined as a target microlens, so The optical axis of the target microlens is defined as a target optical axis, and the sensing pixel through which the target optical axis passes is defined as a target sensing pixel. A plurality of microlenses are defined as adjacent microlenses, and the second light-shielding layer shields a plurality of parallel third oblique incident light entering the adjacent microlenses from the outside from entering the first transparent medium layer and all The target sensing pixel.
The optical sensor according to claim 1, wherein the optical sensor further comprises:

A first light-shielding layer, which is located above the substrate and has a plurality of first light holes; and

A second light-shielding layer is located above the first light-shielding layer and has a plurality of second light holes, wherein the plurality of microlenses are respectively located above the plurality of second light holes, and the plurality of An optical axis passes through the plurality of second light holes and the plurality of first light holes, respectively, wherein a pitch X of the plurality of microlenses is represented by the following formula:

X = A1 + (H / h) * (A2-A1) ± 20μm

Wherein A1 represents an aperture of the first light hole, A2 represents an aperture of the second light hole, H represents a distance between a bottom surface of the micro lens and the first light-shielding layer, and h represents the The distance between the second light-shielding layer and the first light-shielding layer.
The optical sensor of claim 1, wherein a lateral dimension of the plurality of sensing pixels is designed to receive the plurality of parallel forward incident light, but not to receive the plurality of parallel forward incident light. The light is incident obliquely, and the optical sensor does not have any light shielding layer between the first transparent medium layer and the plurality of sensing pixels to shield the plurality of parallel obliquely incident light.
The optical sensor according to claim 1, wherein the optical sensor further comprises:

A dielectric layer set on the substrate and covering the plurality of sensing pixels; and

An optical filter layer is located on the dielectric layer group, and performs a light wavelength filtering action on the plurality of parallel forward incident light and the plurality of parallel oblique incident light, wherein the first transparent medium A layer is located on the optical filter layer, the plurality of microlenses are located on the first transparent medium layer, and a lateral dimension of the plurality of sensing pixels is designed to receive the plurality of parallel normal incidences Light, but does not receive the plurality of parallel obliquely incident light, and the optical sensor does not have any light shielding layer between the first transparent medium layer and the plurality of sensing pixels to shield the plurality of Parallel obliquely incident light.
The optical sensor according to claim 1, wherein the optical sensor further comprises:

A plurality of offset microlenses are arranged in an array and located on or above the first transparent medium layer, wherein:

The plurality of microlenses respectively enter the plurality of parallel forward incident lights into a part of the total number of the plurality of sensing pixels, and the plurality of parallel oblique incident lights enter the plurality of Part of the total number of sensing pixels;

The plurality of offset microlenses respectively enter a plurality of parallel second, incident light from the outside into the plurality of offset microlenses through the first transparent medium layer and enter the plurality of sensing elements. The remaining portion of the total number of pixels is external, and a plurality of parallel fourth oblique incident lights entering the plurality of offset microlenses from the outside are incident on the inside of the remaining portion of the total number of sensing pixels. The target generates the plurality of parallel second normal incident lights and the plurality of parallel fourth oblique incident lights, and the plurality of parallel second normal incident lights are parallel to the plurality of offset Each of the plurality of optical axes of the lens forms a second angle with each of the fourth obliquely incident light and each of the optical axes.
The optical sensor according to claim 12, wherein the plurality of offset microlenses are arranged at the periphery of the plurality of microlenses.
The optical sensor according to claim 12, wherein the second angle is between 0 degrees and 60 degrees.
An optical sensor, characterized in that the optical sensor includes:

A substrate with multiple sensing pixels arranged in an array;

A first transparent dielectric layer located above the substrate; and

A plurality of offset microlenses are arranged in an array and located on or above the first transparent medium layer, wherein:

The plurality of offset microlenses respectively enter a plurality of parallel forward incident light entering the plurality of offset microlenses from the outside into the total number of sensing pixels through the first transparent medium layer. Part or all of the plurality of sensing pixels, and a plurality of parallel oblique incident light entering the plurality of offset microlenses from the outside are incident on a part or all of the total number of the plurality of sensing pixels, thereby sensing An image of a target that generates the plurality of parallel forward incident light and the plurality of parallel oblique incident light, the plurality of parallel forward incident light being parallel to the plurality of A plurality of optical axes of the microlens are shifted, and each of the parallel obliquely incident light forms an angle with each of the optical axes.
The optical sensor according to claim 15, wherein the optical sensor further comprises:

A dielectric layer group located on the substrate and covering the plurality of sensing pixels;

A first light-shielding layer is located on the dielectric layer group and has a plurality of first light holes. The plurality of parallel forward incident lights do not pass through the plurality of first light holes. Obliquely incident light passes through the plurality of first light holes; and

An optical filter layer is located on the first light-shielding layer, and performs a wavelength filtering action on the plurality of parallel forwardly incident light and the plurality of parallel obliquely incident light, wherein the first transparent medium A layer is located on the optical filter layer, and the plurality of offset microlenses are located on the first transparent medium layer.
The optical sensor according to claim 15, wherein the optical sensor further comprises:

A lens light-shielding layer is located on the first transparent medium layer and in a plurality of gaps between the plurality of offset microlenses to shield a plurality of parallel second ones from the outside from entering the plurality of gaps. The oblique incident light is prevented from entering the first transparent medium layer and the plurality of sensing pixels.
The optical sensor according to claim 15, wherein the optical sensor further comprises:

A dielectric layer group located on the substrate and covering the plurality of sensing pixels;

A first light-shielding layer is located on the dielectric layer group and has a plurality of first light holes. The plurality of parallel forward incident light passes through the plurality of first light holes. Obliquely incident light does not pass through the plurality of first light holes;

An optical filter layer is located on the first light-shielding layer, and performs a wavelength filtering action on the plurality of parallel forwardly incident light and the plurality of parallel obliquely incident light, wherein the first transparent medium A layer is located on the optical filter layer, and the plurality of offset microlenses are located on the first transparent medium layer; and

A lens light-shielding layer is located on the first transparent medium layer and in a plurality of gaps between the plurality of offset microlenses to shield a plurality of parallel second ones from the outside from entering the plurality of gaps. The oblique incident light is prevented from entering the first transparent medium layer and the plurality of sensing pixels.
The optical sensor according to claim 15, wherein the optical sensor further comprises:

A second light-shielding layer on the first transparent medium layer and having a plurality of second light holes; and

A second transparent medium layer is located on the second light-shielding layer, and the plurality of offset microlenses are located on the second transparent medium layer, wherein one of the plurality of offset microlenses is defined as a target. Microlens, the optical axis of the target microlens is defined as a target optical axis, and the sensing pixel through which the target optical axis passes is defined as a target sensing pixel, which is the same as the target microlens The adjacent offset microlenses are defined as adjacent microlenses, and the second light-shielding layer shields a plurality of parallel third obliquely incident light entering the adjacent microlenses from the outside from entering the first A transparent medium layer and the target sensing pixel.
The optical sensor according to claim 15, wherein the optical sensor further comprises:

A dielectric layer group located on the substrate and covering the plurality of sensing pixels;

A first light-shielding layer is located on the dielectric layer group and has a plurality of first light holes. The plurality of parallel forward incident lights do not pass through the plurality of first light holes. Obliquely incident light passes through the plurality of first light holes;

An optical filter layer is located on the first light-shielding layer, and performs a wavelength filtering action on the plurality of parallel forwardly incident light and the plurality of parallel obliquely incident light, wherein the first transparent medium A layer is located on the optical filter layer;

A second light-shielding layer on the first transparent medium layer and having a plurality of second light holes; and

A second transparent medium layer is located on the second light-shielding layer, and the plurality of offset microlenses are located on the second transparent medium layer, wherein one of the plurality of offset microlenses is defined as a target. Microlens, the optical axis of the target microlens is defined as a target optical axis, and the sensing pixel through which the target optical axis passes is defined as a target sensing pixel, which is the same as the target microlens The adjacent offset microlenses are defined as adjacent microlenses, and the second light-shielding layer shields a plurality of parallel third obliquely incident light entering the adjacent microlenses from the outside from entering the first A transparent medium layer and the target sensing pixel.
An optical sensing system, characterized in that the optical sensing system includes:

A base

A battery disposed on the base;

A frame disposed above the battery;

An optical sensor for sensing an image of a target;

A display for displaying information, wherein the optical sensor is mounted on the frame or is attached to a lower surface of the display, the target is located on or above the display, and the optical sensor passes through the display The image of the target is sensed, and the battery powers the optical sensor and the display.
The optical sensing system according to claim 21, wherein a shortest distance between a receiving bottom of the frame for mounting the optical sensor and the display is between 0.1 mm and 0.5 mm .
The optical sensing system according to claim 21, wherein the optical sensor comprises:

A substrate with multiple sensing pixels arranged in an array;

A first transparent dielectric layer located above the substrate; and

A plurality of microlenses arranged in an array and located on or above the first transparent medium layer, wherein the plurality of microlenses respectively enter a plurality of parallel forward incident light from the outside into the plurality of microlenses, Is incident on a part or all of the total number of the sensing pixels through the first transparent medium layer, and a plurality of parallel oblique incident light entering the microlenses from the outside is incident on the Some or all of the total number of sensing pixels are external, thereby sensing an image of the target, the target generating the plurality of parallel forward incident light and the plurality of parallel oblique incidence Light, the plurality of parallel normal incident lights are parallel to a plurality of optical axes of the plurality of microlenses, and each of the parallel oblique incident lights forms an angle with each of the optical axes.
The optical sensing system according to claim 21, wherein the optical sensor comprises:

A substrate with multiple sensing pixels arranged in an array;

A first transparent dielectric layer located above the substrate; and

A plurality of offset microlenses are arranged in an array and located on or above the first transparent medium layer, wherein:

The plurality of offset microlenses respectively enter a plurality of parallel forward incident light entering the plurality of offset microlenses from the outside into the total number of sensing pixels through the first transparent medium layer. Part or all of the plurality of sensing pixels, and a plurality of parallel oblique incident light entering the plurality of offset microlenses from the outside are incident on a part or all of the total number of the plurality of sensing pixels, thereby sensing The image of the target, the target generating the plurality of parallel forward incident light and the plurality of parallel oblique incidence light, the plurality of parallel forward incident light being parallel to the A plurality of optical axes of the plurality of offset microlenses, each of the parallel oblique incident light forms an angle with each of the optical axes.
A method for manufacturing an optical sensor, wherein the method for manufacturing the optical sensor includes the following steps:

Providing a substrate with a plurality of sensing pixels arranged in an array;

Forming a first transparent dielectric layer over the substrate; and

Forming a plurality of microlenses on or above the first transparent medium layer and arranging them in an array, wherein the plurality of microlenses respectively enter a plurality of parallel forward incident light entering the microlenses from the outside through The first transparent medium layer is incident on part or all of the total number of the plurality of sensing pixels, and a plurality of parallel obliquely incident light entering the plurality of microlenses from the outside is incident on the plurality of Part or all of the total number of sensing pixels, thereby sensing an image of a target that generates the plurality of parallel forward incident light and the plurality of parallel oblique incident light, The plurality of parallel normal incident lights are parallel to a plurality of optical axes of the plurality of microlenses, and each of the parallel oblique incident lights forms an angle with each of the optical axes.
The manufacturing method according to claim 25, wherein the manufacturing method of the optical sensor further comprises the following steps:

A first light-shielding layer is formed between the substrate and the first transparent medium layer, the first light-shielding layer has a plurality of first light holes, and the plurality of parallel forward incident light passes through the plurality of A first light hole, and the plurality of parallel obliquely incident lights do not pass through the plurality of first light holes.
The manufacturing method according to claim 25, wherein the manufacturing method of the optical sensor further comprises the following steps:

Forming a second light-shielding layer and a second transparent medium layer between the plurality of microlenses and the first transparent medium layer, the second light-shielding layer having a plurality of second light holes, and the second transparent A dielectric layer is located on the second light-shielding layer, the plurality of micro lenses are located on the second transparent medium layer, and the second light-shielding layer shields stray light of adjacent lenses from entering the plurality of sensing pixels. .
The manufacturing method according to claim 25, wherein the manufacturing method of the optical sensor further comprises the following steps:

A lens light shielding layer is formed in a plurality of gaps between the plurality of microlenses to shield stray light from adjacent gaps from entering the plurality of sensing pixels.
A method for manufacturing an optical sensor, wherein the method for manufacturing the optical sensor includes the following steps:

Providing a substrate with a plurality of sensing pixels arranged in an array;

Forming a first transparent dielectric layer over the substrate; and

A plurality of offset microlenses are formed on or above the first transparent medium layer and arranged in an array, wherein the plurality of offset microlenses enter a plurality of parallel microlenses from the outside into the plurality of offset microlenses, respectively. The forward incident light passes through the first transparent medium layer and enters part or all of the total number of the plurality of sensing pixels, and will enter the plurality of parallel oblique microlenses from the outside. The incident light is incident inside a part or all of the total number of the plurality of sensing pixels, thereby sensing an image of a target, the target generating the plurality of parallel forward incident light and the plurality of Parallel obliquely incident light, the plurality of parallel forwardly incident light is parallel to a plurality of optical axes of the plurality of offset microlenses, each of the parallel obliquely incident light is sandwiched with each of the optical axes Out of an angle.
The manufacturing method according to claim 29, wherein the manufacturing method of the optical sensor further comprises the following steps:

A first light-shielding layer is formed between the substrate and the first transparent medium layer, the first light-shielding layer has a plurality of first light holes, and the plurality of parallel forward incident lights do not pass through the plurality of First light holes, the plurality of parallel obliquely incident light passes through the plurality of first light holes.
The manufacturing method according to claim 29, wherein the manufacturing method of the optical sensor further comprises the following steps:

A second light-shielding layer and a second transparent medium layer are formed between the plurality of offset microlenses and the first transparent medium layer. The second light-shielding layer has a plurality of second light holes. Two transparent medium layers are located on the second light-shielding layer, the plurality of offset microlenses are located on the second transparent medium layer, and the second light-shielding layer shields stray light of adjacent lenses from entering the plurality of Sensing pixels.
The manufacturing method according to claim 29, wherein the manufacturing method of the optical sensor further comprises the following steps:

A lens light shielding layer is formed in a plurality of gaps between the plurality of offset microlenses to shield stray light from adjacent gaps from entering the plurality of sensing pixels.
An optical sensor includes:

A substrate including a sensing pixel array;

A first light-shielding layer located above the sensing pixel array and having a plurality of first openings, wherein the first openings expose a plurality of sensing pixels of the sensing pixel array;

A microlens layer located above the first light-shielding layer and including a plurality of microlenses; and

A first transparent medium layer located above the sensing pixel array and interposed between the microlens layer and the sensing pixel array, wherein the first transparent medium layer has a first thickness;

The microlens layer is used to guide an incident light through the first transparent medium layer to the sensing pixels under the first openings.
The optical sensor of claim 33, further comprising:

A protective layer conformably covers the microlens layer.
The optical sensor of claim 33, wherein a centerline of the at least one microlens has an offset distance from a centerline of the corresponding at least one first opening.
The optical sensor of claim 35, wherein the offset distance, the radius of curvature of the microlenses, the first thickness, and the apertures of the first openings are configured to enable the sensing pixels to receive an oblique Angular incident light.
The optical sensor of claim 33, wherein a centerline of the at least one microlens overlaps with a centerline of the corresponding at least one first opening.
The optical sensor of claim 33, wherein the first openings and the sensing pixels correspond to each other in a one-to-one, one-to-many, or many-to-one relationship.
The optical sensor of claim 33, wherein the micro lenses and the sensing pixels correspond to each other in a one-to-one, one-to-many, or many-to-one relationship.
The optical sensor of claim 33, wherein a thickness of the first light-shielding layer is in a range of about 0.3 micrometers to about 5 micrometers, and a diameter of the first openings is in a range of 0.3 micrometers to 50 micrometers.
The optical sensor of claim 33, wherein the first thickness of the first transparent dielectric layer is in a range of 1 micrometer to 50 micrometers.
The optical sensor of claim 33, further comprising:

A second transparent dielectric layer is located between the first light-shielding layer and the microlens layer.
The optical sensor of claim 33, further comprising:

A filter layer is located between the first transparent medium layer and the microlens layer.
The optical sensor of claim 33, further comprising:

A second light-shielding layer is located on the first transparent medium layer and has a plurality of second openings.
The optical sensor of claim 44, wherein a thickness of the second light-shielding layer is in a range of about 0.3 μm to about 5 μm, and a diameter of the second openings is in a range of about 0.3 μm to about 50 μm.
The optical sensor of claim 33, further comprising:

A second transparent medium layer between the first transparent medium layer and the microlens layer; and

A third light shielding layer is located between the first transparent medium layer and the second transparent medium layer.
An optical sensor includes:

A substrate including a sensing pixel array, wherein the sensing pixel array includes a plurality of sensing pixels, and each of the sensing pixels has a pixel size;

A first transparent dielectric layer located above the sensing pixel array; and

A microlens layer is located above the first transparent medium layer and includes a plurality of microlenses, and each of the microlenses has a diameter, wherein the microlenses are used to guide an incident light through the first transparent medium layer to The sensing pixels,

The pixel size is in the range of 3 to 10 microns, and the diameter is in the range of 10 to 50 microns.
The optical sensor according to claim 47, wherein the first transparent medium layer has a refractive index n, the first transparent medium layer has a thickness T, the micro lenses have a focal length f and a diameter D, and the incident light Has an incident angle θ i and a refraction angle θ r ;

The pixel size P, the refractive index n, the thickness T, the focal length f, the diameter D, the incident angle θ i , and the refraction angle θ r conform to the following relationship:

sinθ i = n * sinθ r ,

f = ((D / 2) 2 + T 2 ) 1/2 ,

P / 2 = f * tanθ r .
The optical sensor of claim 47, wherein the substrate further comprises a circuit structure located between two adjacent ones of the sensing pixels.
The optical sensor according to claim 48, wherein a center line of the at least one microlens has an offset distance from a center line of the corresponding sensing pixel.
The optical sensor of claim 50, wherein the offset distance, the pixel size, the refractive index, the thickness, the focal length, and the diameter are configured to enable the sensing pixels to receive light incident at an oblique angle. .
The optical sensor of claim 47, wherein a center line of at least one micro lens overlaps a center line of a corresponding sensing pixel.
The optical sensor of claim 47, wherein the micro lenses and the sensing pixels correspond to each other in a one-to-one, one-to-many, or many-to-one relationship.
The optical sensor of claim 47, wherein a first thickness of the first transparent dielectric layer is in a range of 1 micrometer to 50 micrometers.
The optical sensor of claim 47, wherein a ratio of the pixel size to the diameter is in a range of 0.06 to 1.
The optical sensor of claim 47, wherein the micro lens layer on the first transparent medium layer further has a plurality of micro lenses with a second focal length to guide another incident light to penetrate the first transparent medium layer. To the sensing pixels.
The optical sensor of claim 47, further comprising:

A second light-shielding layer is located on the first transparent medium layer and has a plurality of second openings, wherein the microlenses are correspondingly disposed in the second openings.