WO2020022779A1 - Novel heterocyclic compound and organic light-emitting device using same - Google Patents
Novel heterocyclic compound and organic light-emitting device using same Download PDFInfo
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- WO2020022779A1 WO2020022779A1 PCT/KR2019/009192 KR2019009192W WO2020022779A1 WO 2020022779 A1 WO2020022779 A1 WO 2020022779A1 KR 2019009192 W KR2019009192 W KR 2019009192W WO 2020022779 A1 WO2020022779 A1 WO 2020022779A1
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- 150000002391 heterocyclic compounds Chemical class 0.000 title abstract description 4
- 150000001875 compounds Chemical class 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 38
- 239000011368 organic material Substances 0.000 claims description 33
- 125000003118 aryl group Chemical group 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- 125000003342 alkenyl group Chemical group 0.000 claims description 10
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 9
- 125000006819 (C2-60) heteroaryl group Chemical group 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000004104 aryloxy group Chemical group 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 125000000449 nitro group Chemical class [O-][N+](*)=O 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 2
- 125000004438 haloalkoxy group Chemical group 0.000 claims description 2
- 125000001188 haloalkyl group Chemical group 0.000 claims description 2
- 150000002825 nitriles Chemical class 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 125000004001 thioalkyl group Chemical group 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 133
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- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 42
- 238000002347 injection Methods 0.000 description 42
- 239000007924 injection Substances 0.000 description 42
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- 125000002877 alkyl aryl group Chemical group 0.000 description 3
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- 239000000956 alloy Substances 0.000 description 3
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- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 125000001769 aryl amino group Chemical group 0.000 description 3
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 3
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- ZXHUJRZYLRVVNP-UHFFFAOYSA-N dibenzofuran-4-ylboronic acid Chemical compound C12=CC=CC=C2OC2=C1C=CC=C2B(O)O ZXHUJRZYLRVVNP-UHFFFAOYSA-N 0.000 description 3
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- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D307/91—Dibenzofurans; Hydrogenated dibenzofurans
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/76—Dibenzothiophenes
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/14—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing three or more hetero rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
- C07D409/14—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing three or more hetero rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
Definitions
- the present invention relates to a novel heterocyclic compound and an organic light emitting device comprising the same.
- organic light emitting phenomenon refers to a phenomenon of converting electrical energy into light energy using an organic material.
- the organic light emitting device using the organic light emitting phenomenon has a wide viewing angle, excellent contrast, fast response time, excellent brightness, driving voltage and response speed characteristics, many studies have been conducted.
- the organic light emitting device generally has a structure including an anode and a cathode and an organic layer between the anode and the cathode.
- the organic layer is often formed of a multi-layered structure composed of different materials to increase the efficiency and stability of the organic light emitting device, for example, it may be made of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer.
- Patent Document 1 Korean Patent Publication No. 10-2000-0051826
- the present invention relates to a novel heterocyclic compound and an organic light emitting device comprising the same.
- the present invention provides a compound represented by the following formula (1).
- Each X is independently N or CH, at least two of X is N,
- Y 1 is N, O or S
- Y 2 and Y 3 are each independently O or S,
- Ar 1 and Ar 2 are each independently substituted or unsubstituted C 6-60 aryl; Or C 2-60 heteroaryl including any one or more hetero atoms selected from the group consisting of substituted or unsubstituted N, O, S and Si,
- R 1 to R 6 are each independently halogen; Hydroxy; Cyano; Nitrile; Nitro; Amino; Substituted or unsubstituted C 1-60 alkyl; Substituted or unsubstituted C 1-60 haloalkyl; Substituted or unsubstituted C 1-60 thioalkyl; Substituted or unsubstituted C 1-60 alkoxy; Substituted or unsubstituted C 1-60 haloalkoxy; Substituted or unsubstituted C 3-60 cycloalkyl; Substituted or unsubstituted C 1-60 alkenyl; Substituted or unsubstituted C 6-60 aryl; Substituted or unsubstituted C 6-60 aryloxy; Or C 2-60 heteroaryl containing one or more of substituted or unsubstituted O, N, Si, and S,
- a, b, c, d and e are each independently an integer of 0 to 3,
- f is an integer of 0-4.
- the present invention is a first electrode; A second electrode provided to face the first electrode; And at least one organic material layer provided between the first electrode and the second electrode, wherein at least one of the organic material layers comprises a compound represented by Chemical Formula 1. do.
- the compound represented by Chemical Formula 1 may be used as a material of the organic material layer of the organic light emitting diode, and may improve efficiency, low driving voltage, and / or lifetime characteristics in the organic light emitting diode.
- the compound represented by Chemical Formula 1 may be used as a hole injection, hole transport, hole injection and transport, light emission, electron transport, or electron injection material.
- FIG. 1 shows an example of an organic light emitting element composed of a substrate 1, an anode 2, a light emitting layer 3, and a cathode 4.
- FIG. 2 shows a substrate 1, an anode 2, a hole injection layer 5, a hole transport layer 6, an electron blocking layer 7, a light emitting layer 3, an electron transport layer 8, an electron injection layer 9.
- an organic light emitting element composed of a cathode 4.
- the present invention provides a compound represented by Chemical Formula 1.
- substituted or unsubstituted is deuterium; Halogen group; Nitrile group; Nitro group; Hydroxyl group; Carbonyl group; Ester group; Imide group; Amino group; Phosphine oxide groups; An alkoxy group; Aryloxy group; Alkyl thioxy group; Arylthioxy group; Alkyl sulfoxy groups; Aryl sulfoxy group; Silyl groups; Boron group; Alkyl groups; Cycloalkyl group; Alkenyl groups; Aryl group; Aralkyl group; Ar alkenyl group; Alkylaryl group; Alkylamine group; Aralkyl amine groups; Heteroarylamine group; Arylamine group; Aryl phosphine group; Or substituted or unsubstituted with one or more substituents selected from the group consisting of heterocyclic groups including one or more of N, O, and S atoms, or two or more substituents connected to the substituents
- a substituent to which two or more substituents are linked may be a biphenyl group. That is, the biphenyl group may be an aryl group, and can be interpreted as a substituent to which two phenyl groups are linked.
- carbon number of a carbonyl group in this specification is not specifically limited, It is preferable that it is C1-C40. Specifically, it may be a compound having a structure as follows, but is not limited thereto.
- the ester group may be substituted with oxygen of the ester group having 1 to 25 carbon atoms, a straight chain, branched chain or cyclic alkyl group or an aryl group having 6 to 25 carbon atoms.
- it may be a compound of the following structural formula, but is not limited thereto.
- carbon number of an imide group is not specifically limited, It is preferable that it is C1-C25. Specifically, it may be a compound having a structure as follows, but is not limited thereto.
- the silyl group includes trimethylsilyl group, triethylsilyl group, t-butyldimethylsilyl group, vinyldimethylsilyl group, propyldimethylsilyl group, triphenylsilyl group, diphenylsilyl group, phenylsilyl group, and the like.
- the present invention is not limited thereto.
- the boron group specifically includes, but is not limited to, trimethylboron group, triethylboron group, t-butyldimethylboron group, triphenylboron group, phenylboron group and the like.
- examples of the halogen group include fluorine, chlorine, bromine or iodine.
- the alkyl group may be linear or branched chain, carbon number is not particularly limited, but is preferably 1 to 40. According to an exemplary embodiment, the alkyl group has 1 to 20 carbon atoms. According to another exemplary embodiment, the alkyl group has 1 to 10 carbon atoms. According to another exemplary embodiment, the alkyl group has 1 to 6 carbon atoms.
- alkyl group examples include methyl, ethyl, propyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tert-butyl, sec-butyl, 1-methyl-butyl, 1-ethyl-butyl, pentyl, n -Pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4-methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethylbutyl, heptyl , n-heptyl, 1-methylhexyl, cyclopentylmethyl, cyclohexylmethyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, 2-ethylhexyl
- the alkenyl group may be linear or branched chain, carbon number is not particularly limited, but is preferably 2 to 40. According to an exemplary embodiment, the alkenyl group has 2 to 20 carbon atoms. According to another exemplary embodiment, the alkenyl group has 2 to 10 carbon atoms. According to another exemplary embodiment, the alkenyl group has 2 to 6 carbon atoms.
- Specific examples include vinyl, 1-propenyl, isopropenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 3-methyl-1- Butenyl, 1,3-butadienyl, allyl, 1-phenylvinyl-1-yl, 2-phenylvinyl-1-yl, 2,2-diphenylvinyl-1-yl, 2-phenyl-2- ( Naphthyl-1-yl) vinyl-1-yl, 2,2-bis (diphenyl-1-yl) vinyl-1-yl, stilbenyl group, styrenyl group and the like, but are not limited thereto.
- the cycloalkyl group is not particularly limited, but preferably has 3 to 60 carbon atoms, and according to one embodiment, the cycloalkyl group has 3 to 30 carbon atoms. According to another exemplary embodiment, the cycloalkyl group has 3 to 20 carbon atoms. According to another exemplary embodiment, the cycloalkyl group has 3 to 6 carbon atoms.
- the aryl group is not particularly limited, but preferably has 6 to 60 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. According to an exemplary embodiment, the aryl group has 6 to 30 carbon atoms. According to an exemplary embodiment, the aryl group has 6 to 20 carbon atoms.
- the aryl group may be a phenyl group, a biphenyl group, a terphenyl group, etc. as the monocyclic aryl group, but is not limited thereto.
- the polycyclic aryl group may be a naphthyl group, anthracenyl group, phenanthryl group, pyrenyl group, perylenyl group, chrysenyl group, fluorenyl group, and the like, but is not limited thereto.
- a fluorenyl group may be substituted, and two substituents may be bonded to each other to form a spiro structure.
- the fluorenyl group is substituted, And so on.
- the present invention is not limited thereto.
- the heterocyclic group is a heterocyclic group containing one or more of O, N, Si, and S as a dissimilar element, and the carbon number is not particularly limited, but is preferably 2 to 60 carbon atoms.
- the heterocyclic group include thiophene group, furan group, pyrrole group, imidazole group, thiazole group, oxazole group, oxadiazole group, triazole group, pyridyl group, bipyridyl group, pyrimidyl group, triazine group, acridil group , Pyridazine group, pyrazinyl group, quinolinyl group, quinazoline group, quinoxalinyl group, phthalazinyl group, pyrido pyrimidinyl group, pyrido pyrazinyl group, pyrazino pyrazinyl group, isoquinoline group, indole group , Carbazole group
- the aryl group in the aralkyl group, aralkenyl group, alkylaryl group, and arylamine group is the same as the example of the aryl group described above.
- the alkyl group among the aralkyl group, the alkylaryl group, and the alkylamine group is the same as the example of the alkyl group described above.
- the heteroaryl of the heteroarylamine may be applied to the description of the aforementioned heterocyclic group.
- the alkenyl group in the aralkenyl group is the same as the example of the alkenyl group described above.
- the description of the aryl group described above may be applied.
- the description of the aforementioned heterocyclic group may be applied except that the heteroarylene is a divalent group.
- the hydrocarbon ring is not a monovalent group, and the description of the aforementioned aryl group or cycloalkyl group may be applied except that two substituents are formed by bonding.
- the heterocyclic group is not a monovalent group, and the description of the aforementioned heterocyclic group may be applied except that two substituents are formed by bonding.
- X is all N.
- Ar 1 and Ar 2 are phenyl.
- Y 1 is O or S.
- a, b, c, d, e and f are zero.
- the compound represented by Formula 1 may be selected from the group consisting of the following compounds.
- the compound represented by Chemical Formula 1 may be prepared by the same method as in Scheme 1 below.
- the manufacturing method may be more specific in the production examples to be described later.
- reaction is a Suzuki coupling reaction, preferably performed in the presence of a palladium catalyst and a base, and the reactor for the Suzuki coupling reaction can be changed as known in the art.
- the manufacturing method may be more specific in the production examples to be described later.
- the present invention provides an organic light emitting device comprising a compound represented by the formula (1).
- the present invention is a first electrode; A second electrode provided to face the first electrode; And at least one organic material layer provided between the first electrode and the second electrode, wherein at least one of the organic material layers comprises a compound represented by Chemical Formula 1. do.
- the organic material layer of the organic light emitting device of the present invention may be formed of a single layer structure, but may be formed of a multilayer structure in which two or more organic material layers are stacked.
- the organic light emitting device of the present invention may have a structure including a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer as an organic material layer.
- the structure of the organic light emitting device is not limited thereto and may include a smaller number of organic layers.
- the organic layer may include a hole injection layer, a hole transport layer, an electron blocking layer, or a layer for simultaneously injecting and transporting the hole, and the hole injection layer, the hole transport layer, the electron blocking layer, or the hole injection and transport At the same time, the layer comprises a compound represented by the formula (1).
- the organic layer may include a light emitting layer, and the light emitting layer includes a compound represented by Chemical Formula 1.
- the organic layer may include an electron transport layer, an electron injection layer, or a layer for simultaneously transporting and transporting electrons
- the electron transport layer, the electron injection layer, or the layer for simultaneously transporting and transporting electrons is represented by Formula 1 above. It includes a compound represented by.
- the organic layer may include a light emitting layer and an electron transport layer
- the electron transport layer may include a compound represented by the formula (1).
- the organic light emitting device according to the present invention may be an organic light emitting device having a structure in which an anode, one or more organic material layers, and a cathode are sequentially stacked on a substrate.
- the organic light emitting diode according to the present invention may be an organic light emitting diode having an inverted type structure in which a cathode, one or more organic material layers, and an anode are sequentially stacked on a substrate.
- FIGS. 1 and 2 the structure of an organic light emitting device according to an embodiment of the present invention is illustrated in FIGS. 1 and 2.
- FIG. 1 shows an example of an organic light emitting element composed of a substrate 1, an anode 2, a light emitting layer 3, and a cathode 4.
- the compound represented by Formula 1 may be included in the light emitting layer.
- the compound represented by Formula 1 may be included in at least one layer of the hole injection layer, hole transport layer, electron blocking layer, light emitting layer, electron transport layer, electron injection layer.
- the organic material layer may include a light emitting layer, and the light emitting layer may include two or more host materials.
- the two or more host materials may include a compound represented by Chemical Formula 1.
- the organic light emitting device according to the present invention may be manufactured by materials and methods known in the art, except that at least one layer of the organic material layer includes the compound represented by Chemical Formula 1.
- the organic material layers may be formed of the same material or different materials.
- the organic light emitting device may be manufactured by sequentially stacking a first electrode, an organic material layer, and a second electrode on a substrate. At this time, by using a physical vapor deposition (PVD) method such as sputtering or e-beam evaporation, a metal or conductive metal oxide or an alloy thereof is deposited on the substrate to form an anode.
- PVD physical vapor deposition
- an organic material layer including a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer may be formed thereon, and then a material that may be used as a cathode may be deposited thereon.
- an organic light emitting device may be manufactured by sequentially depositing a cathode material, an organic material layer, and an anode material on a substrate.
- the compound represented by Chemical Formula 1 may be formed as an organic layer by a solution coating method as well as a vacuum deposition method in the manufacture of the organic light emitting device.
- the solution coating method means spin coating, dip coating, doctor blading, inkjet printing, screen printing, spray method, roll coating, etc., but is not limited thereto.
- an organic light emitting device may be manufactured by sequentially depositing an organic material layer and an anode material on a substrate from a cathode material (WO 2003/012890).
- the manufacturing method is not limited thereto.
- the first electrode is an anode
- the second electrode is a cathode
- the first electrode is a cathode
- the second electrode is an anode
- the anode material a material having a large work function is generally preferred to facilitate hole injection into the organic material layer.
- the positive electrode material include metals such as vanadium, chromium, copper, zinc and gold or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO); Combinations of oxides with metals such as ZnO: Al or SNO 2 : Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDOT), polypyrrole and polyaniline, and the like, but are not limited thereto.
- the cathode material is a material having a small work function to facilitate electron injection into the organic material layer.
- the negative electrode material include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, and lead or alloys thereof; Multilayer structure materials such as LiF / Al or LiO 2 / Al, and the like, but are not limited thereto.
- the hole injection material is a layer for injecting holes from an electrode, and the hole injection material has a capability of transporting holes.
- the hole injection material has a hole injection effect at an anode, and has an excellent hole injection effect for a light emitting layer or a light emitting material.
- the compound which prevents the movement of the excited excitons to the electron injection layer or the electron injection material, and is excellent in thin film formation ability is preferable.
- the highest occupied molecular orbital (HOMO) of the hole injection material is between the work function of the positive electrode material and the HOMO of the surrounding organic layer.
- hole injection material examples include metal porphyrin, oligothiophene, arylamine-based organic material, hexanitrile hexaazatriphenylene-based organic material, quinacridone-based organic material, and perylene-based Organic materials, anthraquinone and polyaniline and polythiophene-based conductive polymers, but are not limited thereto.
- the hole transport layer is a layer for receiving holes from the hole injection layer and transporting holes to the light emitting layer.
- a hole transporting material is a material capable of transporting holes from an anode or a hole injection layer and transferring them to the light emitting layer. This is suitable. Specific examples thereof include an arylamine-based organic material, a conductive polymer, and a block copolymer having a conjugated portion and a non-conjugated portion together, but are not limited thereto.
- the light emitting material is a material capable of emitting light in the visible region by transporting and combining holes and electrons from the hole transport layer and the electron transport layer, respectively, and a material having good quantum efficiency with respect to fluorescence or phosphorescence is preferable.
- Specific examples thereof include 8-hydroxyquinoline aluminum complex (Alq 3 ); Carbazole series compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzo quinoline-metal compound; Benzoxazole, benzthiazole and benzimidazole series compounds; Poly (p-phenylenevinylene) (PPV) -based polymers; Spiro compounds; Polyfluorene, rubrene and the like, but are not limited thereto.
- the light emitting layer may include a host material and a dopant material.
- the host material may be a condensed aromatic ring derivative or a hetero ring-containing compound.
- the condensed aromatic ring derivatives include anthracene derivatives, pyrene derivatives, naphthalene derivatives, pentacene derivatives, phenanthrene compounds, and fluoranthene compounds
- the heterocyclic containing compounds include carbazole derivatives, dibenzofuran derivatives and ladder types. Furan compounds, pyrimidine derivatives, and the like, but are not limited thereto.
- Dopant materials include aromatic amine derivatives, styrylamine compounds, boron complexes, fluoranthene compounds, metal complexes, and the like.
- the aromatic amine derivatives include condensed aromatic ring derivatives having a substituted or unsubstituted arylamino group, and include pyrene, anthracene, chrysene and periplanthene having an arylamino group, and a styrylamine compound may be substituted or unsubstituted.
- At least one arylvinyl group is substituted with the above-described arylamine, and one or two or more substituents selected from the group consisting of aryl group, silyl group, alkyl group, cycloalkyl group and arylamino group are substituted or unsubstituted.
- substituents selected from the group consisting of aryl group, silyl group, alkyl group, cycloalkyl group and arylamino group are substituted or unsubstituted.
- styrylamine, styryldiamine, styryltriamine, styryltetraamine and the like but is not limited thereto.
- the metal complex includes, but is not limited to, an iridium complex, a platinum complex, and the like.
- the electron transporting material is a layer that receives electrons from the electron injection layer and transports electrons to the light emitting layer.
- the electron transporting material is a material that can inject electrons well from the cathode and transfer them to the light emitting layer. This is suitable. Specific examples include Al complexes of 8-hydroxyquinoline; Complexes including Alq 3 ; Organic radical compounds; Hydroxyflavone-metal complexes and the like, but are not limited thereto.
- the electron transport layer can be used with any desired cathode material as used according to the prior art.
- suitable cathode materials are conventional materials having a low work function followed by an aluminum or silver layer. Specifically cesium, barium, calcium, ytterbium and samarium, followed by aluminum layers or silver layers in each case.
- the electron injection layer is a layer for injecting electrons from an electrode, has a capability of transporting electrons, has an electron injection effect from the cathode, excellent electron injection effect to the light emitting layer or the light emitting material, and hole injection of excitons generated in the light emitting layer
- the compound which prevents the movement to a layer and is excellent in thin film formation ability is preferable.
- fluorenone anthraquinodimethane, diphenoquinone, thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylenetetracarboxylic acid, preorenylidene methane, anthrone and the derivatives thereof, metal Complex compounds, nitrogen-containing five-membered ring derivatives, and the like, but are not limited thereto.
- Examples of the metal complex compound include 8-hydroxyquinolinato lithium, bis (8-hydroxyquinolinato) zinc, bis (8-hydroxyquinolinato) copper, bis (8-hydroxyquinolinato) manganese, Tris (8-hydroxyquinolinato) aluminum, tris (2-methyl-8-hydroxyquinolinato) aluminum, tris (8-hydroxyquinolinato) gallium, bis (10-hydroxybenzo [h] Quinolinato) beryllium, bis (10-hydroxybenzo [h] quinolinato) zinc, bis (2-methyl-8-quinolinato) chlorogallium, bis (2-methyl-8-quinolinato) ( o-cresolato) gallium, bis (2-methyl-8-quinolinato) (1-naphtholato) aluminum, bis (2-methyl-8-quinolinato) (2-naphtolato) gallium, etc. It is not limited to this.
- the organic light emitting device according to the present invention may be a top emission type, a bottom emission type or a double-sided emission type depending on the material used.
- the compound represented by Formula 1 may be included in an organic solar cell or an organic transistor in addition to the organic light emitting device.
- the glass substrate coated with ITO (indium tin oxide) having a thickness of 1,300 kPa was put in distilled water in which detergent was dissolved and ultrasonically cleaned.
- ITO indium tin oxide
- Fischer Co. was used as a detergent
- distilled water was filtered secondly as a filter of Millipore Co. as a distilled water.
- ultrasonic washing was performed twice with distilled water for 10 minutes.
- ultrasonic washing with a solvent of isopropyl alcohol, acetone, methanol dried and transported to a plasma cleaner.
- the substrate was cleaned for 5 minutes using an oxygen plasma, and then the substrate was transferred to a vacuum evaporator.
- the following HI-1 compound was thermally vacuum deposited to a thickness of 50 kPa to form a hole injection layer.
- a hole transport layer was formed by thermal vacuum deposition of the following HT-1 compound to a thickness of 250 kPa on the hole injection layer, and an electron blocking layer was formed by vacuum depositing the following HT-2 compound to a thickness of 50 kPa on the hole transport layer.
- Compound 1, the following YGH-1 compound, and phosphorescent dopant YGD-1 which were prepared in Example 1 as a light emitting layer on the electron blocking layer, were co-deposited at a weight ratio of 44:44:12 to form a light emitting layer having a thickness of 400 kHz.
- the following ET-1 compound was vacuum deposited to a thickness of 250 kPa on the light emitting layer to form an electron transport layer. Formed. Aluminum was deposited to a thickness of 1000 ⁇ on the electron injection layer to form a cathode.
- the deposition rate of the organic material was maintained at 0.4 ⁇ 0.7 ⁇ / sec
- the aluminum was maintained at the deposition rate of 2 ⁇ / sec
- the vacuum during deposition was maintained at 1 ⁇ 10 -7 ⁇ 5 ⁇ 10 -8 torr It was.
- An organic light emitting diode was manufactured according to the same method as Experimental Example 1 except for using the compound described in Table 1 below instead of compound 1 in Experimental Example 1.
- An organic light emitting diode was manufactured according to the same method as Experimental Example 1 except for using the compound described in Table 1 below instead of compound 1 in Experimental Example 1.
- the organic light emitting diodes were measured voltage and efficiency at a current density of 10 mA / cm 2 , and lifespan was measured at a current density of 50 mA / cm 2 , and the results are shown in Table 1 below.
- LT 95 refers to a time (hr) that becomes 95% of the initial luminance.
- substrate 2 anode
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Abstract
The present invention provides a novel heterocyclic compound and an organic light-emitting device using same.
Description
본 출원은 2018년 7월 24일자 한국 특허 출원 제10-2018-0086192호 및 2019년 7월 24일자 한국 특허 출원 제 10-2019-0089573 호에 기초한 우선권의 이익을 주장하며, 해당 한국 특허 출원들의 문헌에 개시된 모든 내용은 본 명세서의 일부로서 포함된다.This application claims the benefit of priority based on Korean Patent Application No. 10-2018-0086192 dated July 24, 2018 and Korean Patent Application No. 10-2019-0089573 dated July 24, 2019. All content disclosed in the literature is included as part of this specification.
본 발명은 신규한 헤테로 고리 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다.The present invention relates to a novel heterocyclic compound and an organic light emitting device comprising the same.
일반적으로 유기 발광 현상이란 유기 물질을 이용하여 전기에너지를 빛에너지로 전환시켜주는 현상을 말한다. 유기 발광 현상을 이용하는 유기 발광 소자는 넓은 시야각, 우수한 콘트라스트, 빠른 응답 시간을 가지며, 휘도, 구동 전압 및 응답 속도 특성이 우수하여 많은 연구가 진행되고 있다.In general, organic light emitting phenomenon refers to a phenomenon of converting electrical energy into light energy using an organic material. The organic light emitting device using the organic light emitting phenomenon has a wide viewing angle, excellent contrast, fast response time, excellent brightness, driving voltage and response speed characteristics, many studies have been conducted.
유기 발광 소자는 일반적으로 양극과 음극 및 상기 양극과 음극 사이에 유기물 층을 포함하는 구조를 가진다. 상기 유기물 층은 유기 발광 소자의 효율과 안정성을 높이기 위하여 각기 다른 물질로 구성된 다층의 구조로 이루어진 경우가 많으며, 예컨대 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등으로 이루어질 수 있다. 이러한 유기 발광 소자의 구조에서 두 전극 사이에 전압을 걸어주게 되면 양극에서는 정공이, 음극에서는 전자가 유기물층에 주입되게 되고, 주입된 정공과 전자가 만났을 때 엑시톤(exciton)이 형성되며, 이 엑시톤이 다시 바닥상태로 떨어질 때 빛이 나게 된다.The organic light emitting device generally has a structure including an anode and a cathode and an organic layer between the anode and the cathode. The organic layer is often formed of a multi-layered structure composed of different materials to increase the efficiency and stability of the organic light emitting device, for example, it may be made of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer. When the voltage is applied between the two electrodes in the structure of the organic light emitting device, holes are injected into the organic material layer at the anode, and electrons are injected into the organic material layer, and excitons are formed when the injected holes and the electrons meet each other. When it falls back to the ground, it glows.
상기와 같은 유기 발광 소자에 사용되는 유기물에 대하여 새로운 재료의 개발이 지속적으로 요구되고 있다.There is a continuous demand for the development of new materials for organic materials used in such organic light emitting devices.
[선행기술문헌][Preceding technical literature]
[특허문헌][Patent Documents]
(특허문헌 1) 한국특허 공개번호 제10-2000-0051826호(Patent Document 1) Korean Patent Publication No. 10-2000-0051826
본 발명은 신규한 헤테로 고리 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다.The present invention relates to a novel heterocyclic compound and an organic light emitting device comprising the same.
본 발명은 하기 화학식 1로 표시되는 화합물을 제공한다.The present invention provides a compound represented by the following formula (1).
[화학식 1][Formula 1]
상기 화학식 1에서,In Chemical Formula 1,
X는 각각 독립적으로 N 또는 CH이되, X 중 2개 이상이 N이고,Each X is independently N or CH, at least two of X is N,
Y1은 N, O 또는 S이고,Y 1 is N, O or S,
Y2 및 Y3은 각각 독립적으로 O 또는 S이고,Y 2 and Y 3 are each independently O or S,
Ar1 및 Ar2는 각각 독립적으로 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 N, O, S 및 Si로 구성되는 군으로부터 선택되는 어느 하나 이상의 헤테로 원자를 포함하는 C2-60 헤테로아릴이고,Ar 1 and Ar 2 are each independently substituted or unsubstituted C 6-60 aryl; Or C 2-60 heteroaryl including any one or more hetero atoms selected from the group consisting of substituted or unsubstituted N, O, S and Si,
R1 내지 R6은 각각 독립적으로 할로겐; 히드록시; 시아노; 니트릴; 니트로; 아미노; 치환 또는 비치환된 C1-60 알킬; 치환 또는 비치환된 C1-60 할로알킬; 치환 또는 비치환된 C1-60 티오알킬; 치환 또는 비치환된 C1-60 알콕시; 치환 또는 비치환된 C1-60 할로알콕시; 치환 또는 비치환된 C3-60 사이클로알킬; 치환 또는 비치환된 C1-60 알케닐; 치환 또는 비치환된 C6-60 아릴; 치환 또는 비치환된 C6-60 아릴옥시; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴이고,R 1 to R 6 are each independently halogen; Hydroxy; Cyano; Nitrile; Nitro; Amino; Substituted or unsubstituted C 1-60 alkyl; Substituted or unsubstituted C 1-60 haloalkyl; Substituted or unsubstituted C 1-60 thioalkyl; Substituted or unsubstituted C 1-60 alkoxy; Substituted or unsubstituted C 1-60 haloalkoxy; Substituted or unsubstituted C 3-60 cycloalkyl; Substituted or unsubstituted C 1-60 alkenyl; Substituted or unsubstituted C 6-60 aryl; Substituted or unsubstituted C 6-60 aryloxy; Or C 2-60 heteroaryl containing one or more of substituted or unsubstituted O, N, Si, and S,
a, b, c, d 및 e는 각각 독립적으로 0 내지 3의 정수이고,a, b, c, d and e are each independently an integer of 0 to 3,
f는 0 내지 4의 정수이다.f is an integer of 0-4.
또한, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물 층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자를 제공한다.In addition, the present invention is a first electrode; A second electrode provided to face the first electrode; And at least one organic material layer provided between the first electrode and the second electrode, wherein at least one of the organic material layers comprises a compound represented by Chemical Formula 1. do.
상술한 화학식 1로 표시되는 화합물은 유기 발광 소자의 유기물 층의 재료로서 사용될 수 있으며, 유기 발광 소자에서 효율의 향상, 낮은 구동전압 및/또는 수명 특성을 향상시킬 수 있다. 특히, 상술한 화학식 1로 표시되는 화합물은 정공주입, 정공수송, 정공주입 및 수송, 발광, 전자수송, 또는 전자주입 재료로 사용될 수 있다.The compound represented by Chemical Formula 1 may be used as a material of the organic material layer of the organic light emitting diode, and may improve efficiency, low driving voltage, and / or lifetime characteristics in the organic light emitting diode. In particular, the compound represented by Chemical Formula 1 may be used as a hole injection, hole transport, hole injection and transport, light emission, electron transport, or electron injection material.
도 1은 기판(1), 양극(2), 발광층(3), 음극(4)으로 이루어진 유기 발광 소자의 예를 도시한 것이다.FIG. 1 shows an example of an organic light emitting element composed of a substrate 1, an anode 2, a light emitting layer 3, and a cathode 4.
도 2는 기판 (1), 양극(2), 정공주입층(5), 정공수송층(6), 전자차단층(7), 발광층(3), 전자수송층(8), 전자주입층(9) 및 음극(4)로 이루어진 유기 발광 소자의 예를 도시한 것이다.2 shows a substrate 1, an anode 2, a hole injection layer 5, a hole transport layer 6, an electron blocking layer 7, a light emitting layer 3, an electron transport layer 8, an electron injection layer 9. And an example of an organic light emitting element composed of a cathode 4.
이하, 본 발명의 이해를 돕기 위하여 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail to help understand the present invention.
본 발명은 상기 화학식 1로 표시되는 화합물을 제공한다.The present invention provides a compound represented by Chemical Formula 1.
본 명세서에서, 및 는 다른 치환기에 연결되는 결합을 의미한다.In this specification, And Means a bond connected to another substituent.
본 명세서에서 "치환 또는 비치환된" 이라는 용어는 중수소; 할로겐기; 니트릴기; 니트로기; 히드록시기; 카보닐기; 에스테르기; 이미드기; 아미노기; 포스핀옥사이드기; 알콕시기; 아릴옥시기; 알킬티옥시기; 아릴티옥시기; 알킬술폭시기; 아릴술폭시기; 실릴기; 붕소기; 알킬기; 사이클로알킬기; 알케닐기; 아릴기; 아르알킬기; 아르알케닐기; 알킬아릴기; 알킬아민기; 아랄킬아민기; 헤테로아릴아민기; 아릴아민기; 아릴포스핀기; 또는 N, O 및 S 원자 중 1개 이상을 포함하는 헤테로고리기로 이루어진 군에서 선택된 1개 이상의 치환기로 치환 또는 비치환되거나, 상기 예시된 치환기 중 2 이상의 치환기가 연결된 치환 또는 비치환된 것을 의미한다. 예컨대, "2 이상의 치환기가 연결된 치환기"는 비페닐기일 수 있다. 즉, 비페닐기는 아릴기일 수도 있고, 2개의 페닐기가 연결된 치환기로 해석될 수 있다.As used herein, the term "substituted or unsubstituted" is deuterium; Halogen group; Nitrile group; Nitro group; Hydroxyl group; Carbonyl group; Ester group; Imide group; Amino group; Phosphine oxide groups; An alkoxy group; Aryloxy group; Alkyl thioxy group; Arylthioxy group; Alkyl sulfoxy groups; Aryl sulfoxy group; Silyl groups; Boron group; Alkyl groups; Cycloalkyl group; Alkenyl groups; Aryl group; Aralkyl group; Ar alkenyl group; Alkylaryl group; Alkylamine group; Aralkyl amine groups; Heteroarylamine group; Arylamine group; Aryl phosphine group; Or substituted or unsubstituted with one or more substituents selected from the group consisting of heterocyclic groups including one or more of N, O, and S atoms, or two or more substituents connected to the substituents exemplified above. . For example, "a substituent to which two or more substituents are linked" may be a biphenyl group. That is, the biphenyl group may be an aryl group, and can be interpreted as a substituent to which two phenyl groups are linked.
본 명세서에서 카보닐기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 40인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.Although carbon number of a carbonyl group in this specification is not specifically limited, It is preferable that it is C1-C40. Specifically, it may be a compound having a structure as follows, but is not limited thereto.
본 명세서에 있어서, 에스테르기는 에스테르기의 산소가 탄소수 1 내지 25의 직쇄, 분지쇄 또는 고리쇄 알킬기 또는 탄소수 6 내지 25의 아릴기로 치환될 수 있다. 구체적으로, 하기 구조식의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the ester group may be substituted with oxygen of the ester group having 1 to 25 carbon atoms, a straight chain, branched chain or cyclic alkyl group or an aryl group having 6 to 25 carbon atoms. Specifically, it may be a compound of the following structural formula, but is not limited thereto.
본 명세서에 있어서, 이미드기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 25인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In this specification, although carbon number of an imide group is not specifically limited, It is preferable that it is C1-C25. Specifically, it may be a compound having a structure as follows, but is not limited thereto.
본 명세서에 있어서, 실릴기는 구체적으로 트리메틸실릴기, 트리에틸실릴기, t-부틸디메틸실릴기, 비닐디메틸실릴기, 프로필디메틸실릴기, 트리페닐실릴기, 디페닐실릴기, 페닐실릴기 등이 있으나 이에 한정되지 않는다. In the present specification, specifically, the silyl group includes trimethylsilyl group, triethylsilyl group, t-butyldimethylsilyl group, vinyldimethylsilyl group, propyldimethylsilyl group, triphenylsilyl group, diphenylsilyl group, phenylsilyl group, and the like. However, the present invention is not limited thereto.
본 명세서에 있어서, 붕소기는 구체적으로 트리메틸붕소기, 트리에틸붕소기, t-부틸디메틸붕소기, 트리페닐붕소기, 페닐붕소기 등이 있으나 이에 한정되지 않는다.In the present specification, the boron group specifically includes, but is not limited to, trimethylboron group, triethylboron group, t-butyldimethylboron group, triphenylboron group, phenylboron group and the like.
본 명세서에 있어서, 할로겐기의 예로는 불소, 염소, 브롬 또는 요오드가 있다.In the present specification, examples of the halogen group include fluorine, chlorine, bromine or iodine.
본 명세서에 있어서, 상기 알킬기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나 1 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 6이다. 알킬기의 구체적인 예로는 메틸, 에틸, 프로필, n-프로필, 이소프로필, 부틸, n-부틸, 이소부틸, tert-부틸, sec-부틸, 1-메틸-부틸, 1-에틸-부틸, 펜틸, n-펜틸, 이소펜틸, 네오펜틸, tert-펜틸, 헥실, n-헥실, 1-메틸펜틸, 2-메틸펜틸, 4-메틸-2-펜틸, 3,3-디메틸부틸, 2-에틸부틸, 헵틸, n-헵틸, 1-메틸헥실, 사이클로펜틸메틸,사이클로헥틸메틸, 옥틸, n-옥틸, tert-옥틸, 1-메틸헵틸, 2-에틸헥실, 2-프로필펜틸, n-노닐, 2,2-디메틸헵틸, 1-에틸-프로필, 1,1-디메틸-프로필, 이소헥실, 2-메틸펜틸, 4-메틸헥실, 5-메틸헥실 등이 있으나, 이들에 한정되지 않는다.In the present specification, the alkyl group may be linear or branched chain, carbon number is not particularly limited, but is preferably 1 to 40. According to an exemplary embodiment, the alkyl group has 1 to 20 carbon atoms. According to another exemplary embodiment, the alkyl group has 1 to 10 carbon atoms. According to another exemplary embodiment, the alkyl group has 1 to 6 carbon atoms. Specific examples of the alkyl group include methyl, ethyl, propyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tert-butyl, sec-butyl, 1-methyl-butyl, 1-ethyl-butyl, pentyl, n -Pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4-methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethylbutyl, heptyl , n-heptyl, 1-methylhexyl, cyclopentylmethyl, cyclohexylmethyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, 2-ethylhexyl, 2-propylpentyl, n-nonyl, 2,2 -Dimethylheptyl, 1-ethyl-propyl, 1,1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl, 5-methylhexyl, and the like, but is not limited thereto.
본 명세서에 있어서, 상기 알케닐기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나, 2 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 6이다. 구체적인 예로는 비닐, 1-프로페닐, 이소프로페닐, 1-부테닐, 2-부테닐, 3-부테닐, 1-펜테닐, 2-펜테닐, 3-펜테닐, 3-메틸-1-부테닐, 1,3-부타디에닐, 알릴, 1-페닐비닐-1-일, 2-페닐비닐-1-일, 2,2-디페닐비닐-1-일, 2-페닐-2-(나프틸-1-일)비닐-1-일, 2,2-비스(디페닐-1-일)비닐-1-일, 스틸베닐기, 스티레닐기 등이 있으나 이들에 한정되지 않는다.In the present specification, the alkenyl group may be linear or branched chain, carbon number is not particularly limited, but is preferably 2 to 40. According to an exemplary embodiment, the alkenyl group has 2 to 20 carbon atoms. According to another exemplary embodiment, the alkenyl group has 2 to 10 carbon atoms. According to another exemplary embodiment, the alkenyl group has 2 to 6 carbon atoms. Specific examples include vinyl, 1-propenyl, isopropenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 3-methyl-1- Butenyl, 1,3-butadienyl, allyl, 1-phenylvinyl-1-yl, 2-phenylvinyl-1-yl, 2,2-diphenylvinyl-1-yl, 2-phenyl-2- ( Naphthyl-1-yl) vinyl-1-yl, 2,2-bis (diphenyl-1-yl) vinyl-1-yl, stilbenyl group, styrenyl group and the like, but are not limited thereto.
본 명세서에 있어서, 사이클로알킬기는 특별히 한정되지 않으나, 탄소수 3 내지 60인 것이 바람직하며, 일 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 30이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 20이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 6이다. 구체적으로 사이클로프로필, 사이클로부틸, 사이클로펜틸, 3-메틸사이클로펜틸, 2,3-디메틸사이클로펜틸, 사이클로헥실, 3-메틸사이클로헥실, 4-메틸사이클로헥실, 2,3-디메틸사이클로헥실, 3,4,5-트리메틸사이클로헥실, 4-tert-부틸사이클로헥실, 사이클로헵틸, 사이클로옥틸 등이 있으나, 이에 한정되지 않는다.In the present specification, the cycloalkyl group is not particularly limited, but preferably has 3 to 60 carbon atoms, and according to one embodiment, the cycloalkyl group has 3 to 30 carbon atoms. According to another exemplary embodiment, the cycloalkyl group has 3 to 20 carbon atoms. According to another exemplary embodiment, the cycloalkyl group has 3 to 6 carbon atoms. Specifically cyclopropyl, cyclobutyl, cyclopentyl, 3-methylcyclopentyl, 2,3-dimethylcyclopentyl, cyclohexyl, 3-methylcyclohexyl, 4-methylcyclohexyl, 2,3-dimethylcyclohexyl, 3, 4,5-trimethylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, cyclooctyl, and the like, but are not limited thereto.
본 명세서에 있어서, 아릴기는 특별히 한정되지 않으나 탄소수 6 내지 60인 것이 바람직하며, 단환식 아릴기 또는 다환식 아릴기일 수 있다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 30이다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 20이다. 상기 아릴기가 단환식 아릴기로는 페닐기, 바이페닐기, 터페닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다. 상기 다환식 아릴기로는 나프틸기, 안트라세닐기, 페난트릴기, 파이레닐기, 페릴레닐기, 크라이세닐기, 플루오레닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the aryl group is not particularly limited, but preferably has 6 to 60 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. According to an exemplary embodiment, the aryl group has 6 to 30 carbon atoms. According to an exemplary embodiment, the aryl group has 6 to 20 carbon atoms. The aryl group may be a phenyl group, a biphenyl group, a terphenyl group, etc. as the monocyclic aryl group, but is not limited thereto. The polycyclic aryl group may be a naphthyl group, anthracenyl group, phenanthryl group, pyrenyl group, perylenyl group, chrysenyl group, fluorenyl group, and the like, but is not limited thereto.
본 명세서에 있어서, 플루오레닐기는 치환될 수 있고, 치환기 2개가 서로 결합하여 스피로 구조를 형성할 수 있다. 상기 플루오레닐기가 치환되는 경우, 등이 될 수 있다. 다만, 이에 한정되는 것은 아니다.In the present specification, a fluorenyl group may be substituted, and two substituents may be bonded to each other to form a spiro structure. When the fluorenyl group is substituted, And so on. However, the present invention is not limited thereto.
본 명세서에 있어서, 헤테로고리기는 이종 원소로 O, N, Si 및 S 중 1개 이상을 포함하는 헤테로고리기로서, 탄소수는 특별히 한정되지 않으나, 탄소수 2 내지 60인 것이 바람직하다. 헤테로고리기의 예로는 티오펜기, 퓨란기, 피롤기, 이미다졸기, 티아졸기, 옥사졸기, 옥사디아졸기, 트리아졸기, 피리딜기, 비피리딜기, 피리미딜기, 트리아진기, 아크리딜기, 피리다진기, 피라지닐기, 퀴놀리닐기, 퀴나졸린기, 퀴녹살리닐기, 프탈라지닐기, 피리도 피리미디닐기, 피리도 피라지닐기, 피라지노 피라지닐기, 이소퀴놀린기, 인돌기, 카바졸기, 벤조옥사졸기, 벤조이미다졸기, 벤조티아졸기, 벤조카바졸기, 벤조티오펜기, 디벤조티오펜기, 벤조퓨라닐기, 페난쓰롤린기(phenanthroline), 이소옥사졸릴기, 티아디아졸릴기, 페노티아지닐기 및 디벤조퓨라닐기 등이 있으나, 이들에만 한정되는 것은 아니다.In the present specification, the heterocyclic group is a heterocyclic group containing one or more of O, N, Si, and S as a dissimilar element, and the carbon number is not particularly limited, but is preferably 2 to 60 carbon atoms. Examples of the heterocyclic group include thiophene group, furan group, pyrrole group, imidazole group, thiazole group, oxazole group, oxadiazole group, triazole group, pyridyl group, bipyridyl group, pyrimidyl group, triazine group, acridil group , Pyridazine group, pyrazinyl group, quinolinyl group, quinazoline group, quinoxalinyl group, phthalazinyl group, pyrido pyrimidinyl group, pyrido pyrazinyl group, pyrazino pyrazinyl group, isoquinoline group, indole group , Carbazole group, benzoxazole group, benzoimidazole group, benzothiazole group, benzocarbazole group, benzothiophene group, dibenzothiophene group, benzofuranyl group, phenanthroline group, isoxazolyl group, thiadia There may be a sleepy group, a phenothiazinyl group, a dibenzofuranyl group, and the like, but is not limited thereto.
본 명세서에 있어서, 아르알킬기, 아르알케닐기, 알킬아릴기, 아릴아민기 중의 아릴기는 전술한 아릴기의 예시와 같다. 본 명세서에 있어서, 아르알킬기, 알킬아릴기, 알킬아민기 중 알킬기는 전술한 알킬기의 예시와 같다. 본 명세서에 있어서, 헤테로아릴아민 중 헤테로아릴은 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 아르알케닐기 중 알케닐기는 전술한 알케닐기의 예시와 같다. 본 명세서에 있어서, 아릴렌은 2가기인 것을 제외하고는 전술한 아릴기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로아릴렌은 2가기인 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 탄화수소 고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 아릴기 또는 사이클로알킬기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다.In the present specification, the aryl group in the aralkyl group, aralkenyl group, alkylaryl group, and arylamine group is the same as the example of the aryl group described above. In the present specification, the alkyl group among the aralkyl group, the alkylaryl group, and the alkylamine group is the same as the example of the alkyl group described above. In the present specification, the heteroaryl of the heteroarylamine may be applied to the description of the aforementioned heterocyclic group. In the present specification, the alkenyl group in the aralkenyl group is the same as the example of the alkenyl group described above. In the present specification, except that the arylene is a divalent group, the description of the aryl group described above may be applied. In the present specification, the description of the aforementioned heterocyclic group may be applied except that the heteroarylene is a divalent group. In the present specification, the hydrocarbon ring is not a monovalent group, and the description of the aforementioned aryl group or cycloalkyl group may be applied except that two substituents are formed by bonding. In the present specification, the heterocyclic group is not a monovalent group, and the description of the aforementioned heterocyclic group may be applied except that two substituents are formed by bonding.
바람직하게는, X는 모두 N이다.Preferably, X is all N.
바람직하게는, Ar1 및 Ar2는 페닐이다.Preferably, Ar 1 and Ar 2 are phenyl.
바람직하게는, Y1은 O 또는 S이다.Preferably, Y 1 is O or S.
바람직하게는, a, b, c, d, e 및 f는 0이다.Preferably, a, b, c, d, e and f are zero.
바람직하게는, 상기 화학식 1로 표시되는 화합물은, 하기 화합물로 구성되는 군으로부터 선택될 수 있다.Preferably, the compound represented by Formula 1 may be selected from the group consisting of the following compounds.
상기 화학식 1로 표시되는 화합물은 하기 반응식 1과 같은 제조 방법으로 제조할 수 있다. 상기 제조 방법은 후술할 제조예에서 보다 구체화될 수 있다.The compound represented by Chemical Formula 1 may be prepared by the same method as in Scheme 1 below. The manufacturing method may be more specific in the production examples to be described later.
[반응식 1] Scheme 1
상기 반응식 1에서, X'를 제외한 나머지 정의는 앞서 정의한 바와 같으며, X'는 할로겐이고 보다 바람직하게는 브로모, 또는 클로로이다. 상기 반응은 스즈키 커플링 반응으로서, 팔라듐 촉매와 염기 존재 하에 수행하는 것이 바람직하며, 스즈키 커플링 반응을 위한 반응기는 당업계에 알려진 바에 따라 변경이 가능하다. 상기 제조 방법은 후술할 제조예에서 보다 구체화될 수 있다.In Scheme 1, the remaining definitions except for X 'are as defined above, and X' is halogen and more preferably bromo or chloro. The reaction is a Suzuki coupling reaction, preferably performed in the presence of a palladium catalyst and a base, and the reactor for the Suzuki coupling reaction can be changed as known in the art. The manufacturing method may be more specific in the production examples to be described later.
또한, 본 발명은 상기 화학식 1로 표시되는 화합물을 포함하는 유기 발광 소자를 제공한다. 일례로, 본 발명은 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물 층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자를 제공한다.In another aspect, the present invention provides an organic light emitting device comprising a compound represented by the formula (1). In one embodiment, the present invention is a first electrode; A second electrode provided to face the first electrode; And at least one organic material layer provided between the first electrode and the second electrode, wherein at least one of the organic material layers comprises a compound represented by Chemical Formula 1. do.
본 발명의 유기 발광 소자의 유기물 층은 단층 구조로 이루어질 수도 있으나, 2층 이상의 유기물층이 적층된 다층 구조로 이루어질 수 있다. 예컨대, 본 발명의 유기 발광 소자는 유기물 층으로서 정공주입층, 정공수송층, 전자차단층, 발광층, 전자수송층, 전자주입층 등을 포함하는 구조를 가질 수 있다. 그러나 유기 발광 소자의 구조는 이에 한정되지 않고 더 적은 수의 유기층을 포함할 수 있다.The organic material layer of the organic light emitting device of the present invention may be formed of a single layer structure, but may be formed of a multilayer structure in which two or more organic material layers are stacked. For example, the organic light emitting device of the present invention may have a structure including a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, an electron transport layer, an electron injection layer as an organic material layer. However, the structure of the organic light emitting device is not limited thereto and may include a smaller number of organic layers.
또한, 상기 유기물 층은 정공주입층, 정공수송층, 전자차단층, 또는 정공 주입과 수송을 동시에 하는 층을 포함할 수 있고, 상기 정공주입층, 정공수송층, 전자차단층, 또는 정공 주입과 수송을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다.In addition, the organic layer may include a hole injection layer, a hole transport layer, an electron blocking layer, or a layer for simultaneously injecting and transporting the hole, and the hole injection layer, the hole transport layer, the electron blocking layer, or the hole injection and transport At the same time, the layer comprises a compound represented by the formula (1).
또한, 상기 유기물 층은 발광층을 포함할 수 있고, 상기 발광층은 상기 화학식 1로 표시되는 화합물을 포함한다.In addition, the organic layer may include a light emitting layer, and the light emitting layer includes a compound represented by Chemical Formula 1.
또한, 상기 유기물 층은 전자수송층, 전자주입층, 또는 전자수송 및 전자주입을 동시에 하는 층을 포함할 수 있고, 상기 전자수송층, 전자주입층 또는 전자수송 및 전자주입을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다.In addition, the organic layer may include an electron transport layer, an electron injection layer, or a layer for simultaneously transporting and transporting electrons, and the electron transport layer, the electron injection layer, or the layer for simultaneously transporting and transporting electrons is represented by Formula 1 above. It includes a compound represented by.
또한, 상기 유기물 층은 발광층 및 전자수송층을 포함하고, 상기 전자수송층은 상기 화학식 1로 표시되는 화합물을 포함할 수 있다.In addition, the organic layer may include a light emitting layer and an electron transport layer, the electron transport layer may include a compound represented by the formula (1).
또한, 본 발명에 따른 유기 발광 소자는, 기판 상에 양극, 1층 이상의 유기물 층 및 음극이 순차적으로 적층된 구조(normal type)의 유기 발광 소자일 수 있다. 또한, 본 발명에 따른 유기 발광 소자는 기판 상에 음극, 1층 이상의 유기물 층 및 양극이 순차적으로 적층된 역방향 구조(inverted type)의 유기 발광 소자일 수 있다. 예컨대, 본 발명의 일실시예에 따른 유기 발광 소자의 구조는 도 1 및 2에 예시되어 있다.In addition, the organic light emitting device according to the present invention may be an organic light emitting device having a structure in which an anode, one or more organic material layers, and a cathode are sequentially stacked on a substrate. In addition, the organic light emitting diode according to the present invention may be an organic light emitting diode having an inverted type structure in which a cathode, one or more organic material layers, and an anode are sequentially stacked on a substrate. For example, the structure of an organic light emitting device according to an embodiment of the present invention is illustrated in FIGS. 1 and 2.
도 1은 기판(1), 양극(2), 발광층(3), 음극(4)으로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 발광층에 포함될 수 있다.FIG. 1 shows an example of an organic light emitting element composed of a substrate 1, an anode 2, a light emitting layer 3, and a cathode 4. In such a structure, the compound represented by Formula 1 may be included in the light emitting layer.
도 2는 기판 (1), 양극(2), 정공주입층(5), 정공수송층(6), 전자차단층(7), 발광층(3), 전자수송층(8), 전자주입층(9) 및 음극(4)로 이루어진 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 정공주입층, 정공수송층, 전자차단층, 발광층, 전자수송층, 전자주입층 중 1층 이상에 포함될 수 있다.2 shows a substrate 1, an anode 2, a hole injection layer 5, a hole transport layer 6, an electron blocking layer 7, a light emitting layer 3, an electron transport layer 8, an electron injection layer 9. And an example of an organic light emitting element composed of a cathode 4. In such a structure, the compound represented by Formula 1 may be included in at least one layer of the hole injection layer, hole transport layer, electron blocking layer, light emitting layer, electron transport layer, electron injection layer.
구체적으로, 상기 유기물층은 발광층을 포함할 수 있고, 상기 발광층은 2종 이상의 호스트 물질을 포함할 수 있다.Specifically, the organic material layer may include a light emitting layer, and the light emitting layer may include two or more host materials.
이때, 상기 2종 이상의 호스트 물질은 상기 화학식 1로 표시되는 화합물을 포함할 수 있다.In this case, the two or more host materials may include a compound represented by Chemical Formula 1.
본 발명에 따른 유기 발광 소자는, 상기 유기물 층 중 1층 이상이 상기 화학식 1로 표시되는 화합물을 포함하는 것을 제외하고는 당 기술분야에 알려져 있는 재료와 방법으로 제조될 수 있다. 또한, 상기 유기 발광 소자가 복수개의 유기물층을 포함하는 경우, 상기 유기물층은 동일한 물질 또는 다른 물질로 형성될 수 있다. The organic light emitting device according to the present invention may be manufactured by materials and methods known in the art, except that at least one layer of the organic material layer includes the compound represented by Chemical Formula 1. In addition, when the organic light emitting device includes a plurality of organic material layers, the organic material layers may be formed of the same material or different materials.
예컨대, 본 발명에 따른 유기 발광 소자는 기판 상에 제1 전극, 유기물층 및 제2 전극을 순차적으로 적층시켜 제조할 수 있다. 이때, 스퍼터링법(sputtering)이나 전자빔 증발법(e-beam evaporation)과 같은 PVD(physical Vapor Deposition)방법을 이용하여, 기판 상에 금속 또는 전도성을 가지는 금속 산화물 또는 이들의 합금을 증착시켜 양극을 형성하고, 그 위에 정공 주입층, 정공 수송층, 발광층 및 전자 수송층을 포함하는 유기물 층을 형성한 후, 그 위에 음극으로 사용할 수 있는 물질을 증착시켜 제조할 수 있다. 이와 같은 방법 외에도, 기판 상에 음극 물질부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 만들 수 있다.For example, the organic light emitting device according to the present invention may be manufactured by sequentially stacking a first electrode, an organic material layer, and a second electrode on a substrate. At this time, by using a physical vapor deposition (PVD) method such as sputtering or e-beam evaporation, a metal or conductive metal oxide or an alloy thereof is deposited on the substrate to form an anode. In addition, an organic material layer including a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer may be formed thereon, and then a material that may be used as a cathode may be deposited thereon. In addition to the above method, an organic light emitting device may be manufactured by sequentially depositing a cathode material, an organic material layer, and an anode material on a substrate.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자의 제조시 진공 증착법 뿐만 아니라 용액 도포법에 의하여 유기물 층으로 형성될 수 있다. 여기서, 용액 도포법이라 함은 스핀 코팅, 딥코팅, 닥터 블레이딩, 잉크젯 프린팅, 스크린 프린팅, 스프레이법, 롤 코팅 등을 의미하지만, 이들만으로 한정되는 것은 아니다.In addition, the compound represented by Chemical Formula 1 may be formed as an organic layer by a solution coating method as well as a vacuum deposition method in the manufacture of the organic light emitting device. Here, the solution coating method means spin coating, dip coating, doctor blading, inkjet printing, screen printing, spray method, roll coating, etc., but is not limited thereto.
이와 같은 방법 외에도, 기판 상에 음극 물질로부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 제조할 수 있다(WO 2003/012890). 다만, 제조 방법이 이에 한정되는 것은 아니다.In addition to the above method, an organic light emitting device may be manufactured by sequentially depositing an organic material layer and an anode material on a substrate from a cathode material (WO 2003/012890). However, the manufacturing method is not limited thereto.
일례로, 상기 제1 전극은 양극이고, 상기 제2 전극은 음극이거나, 또는 상기 제1 전극은 음극이고, 상기 제2 전극은 양극이다.In one example, the first electrode is an anode, the second electrode is a cathode, or the first electrode is a cathode, the second electrode is an anode.
상기 양극 물질로는 통상 유기물 층으로 정공 주입이 원활할 수 있도록 일함수가 큰 물질이 바람직하다. 상기 양극 물질의 구체적인 예로는 바나듐, 크롬, 구리, 아연, 금과 같은 금속 또는 이들의 합금; 아연 산화물, 인듐 산화물, 인듐주석 산화물(ITO), 인듐아연 산화물(IZO)과 같은 금속 산화물; ZnO:Al 또는 SNO2:Sb와 같은 금속과 산화물의 조합; 폴리(3-메틸티오펜), 폴리[3,4-(에틸렌-1,2-디옥시)티오펜](PEDOT), 폴리피롤 및 폴리아닐린과 같은 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다.As the anode material, a material having a large work function is generally preferred to facilitate hole injection into the organic material layer. Specific examples of the positive electrode material include metals such as vanadium, chromium, copper, zinc and gold or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO); Combinations of oxides with metals such as ZnO: Al or SNO 2 : Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDOT), polypyrrole and polyaniline, and the like, but are not limited thereto.
상기 음극 물질로는 통상 유기물층으로 전자 주입이 용이하도록 일함수가 작은 물질인 것이 바람직하다. 상기 음극 물질의 구체적인 예로는 마그네슘, 칼슘, 나트륨, 칼륨, 티타늄, 인듐, 이트륨, 리튬, 가돌리늄, 알루미늄, 은, 주석 및 납과 같은 금속 또는 이들의 합금; LiF/Al 또는 LiO2/Al과 같은 다층 구조 물질 등이 있으나, 이들에만 한정되는 것은 아니다.It is preferable that the cathode material is a material having a small work function to facilitate electron injection into the organic material layer. Specific examples of the negative electrode material include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, and lead or alloys thereof; Multilayer structure materials such as LiF / Al or LiO 2 / Al, and the like, but are not limited thereto.
상기 정공 주입 물질로는 전극으로부터 정공을 주입하는 층으로, 정공 주입 물질로는 정공을 수송하는 능력을 가져 양극에서의 정공 주입효과, 발광층 또는 발광재료에 대하여 우수한 정공 주입 효과를 갖고, 발광층에서 생성된 여기자의 전자주입층 또는 전자주입재료에의 이동을 방지하며, 또한, 박막 형성 능력이 우수한 화합물이 바람직하다. 정공 주입 물질의 HOMO(highest occupied molecular orbital)가 양극 물질의 일함수와 주변 유기물 층의 HOMO 사이인 것이 바람직하다. 정공 주입 물질의 구체적인 예로는 금속 포피린(porphyrin), 올리고티오펜, 아릴아민 계열의 유기물, 헥사니트릴헥사아자트리페닐렌 계열의 유기물, 퀴나크리돈(quinacridone)계열의 유기물, 페릴렌(perylene) 계열의 유기물, 안트라퀴논 및 폴리아닐린과 폴리티오펜 계열의 전도성 고분자 등이 있으나, 이들에만 한정 되는 것은 아니다.The hole injection material is a layer for injecting holes from an electrode, and the hole injection material has a capability of transporting holes. The hole injection material has a hole injection effect at an anode, and has an excellent hole injection effect for a light emitting layer or a light emitting material. The compound which prevents the movement of the excited excitons to the electron injection layer or the electron injection material, and is excellent in thin film formation ability is preferable. Preferably, the highest occupied molecular orbital (HOMO) of the hole injection material is between the work function of the positive electrode material and the HOMO of the surrounding organic layer. Specific examples of the hole injection material include metal porphyrin, oligothiophene, arylamine-based organic material, hexanitrile hexaazatriphenylene-based organic material, quinacridone-based organic material, and perylene-based Organic materials, anthraquinone and polyaniline and polythiophene-based conductive polymers, but are not limited thereto.
상기 정공수송층은 정공주입층으로부터 정공을 수취하여 발광층까지 정공을 수송하는 층으로, 정공 수송 물질로 양극이나 정공 주입층으로부터 정공을 수송받아 발광층으로 옮겨줄 수 있는 물질로 정공에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 아릴아민 계열의 유기물, 전도성 고분자, 및 공액 부분과 비공액 부분이 함께 있는 블록 공중합체 등이 있으나, 이들에만 한정되는 것은 아니다.The hole transport layer is a layer for receiving holes from the hole injection layer and transporting holes to the light emitting layer. A hole transporting material is a material capable of transporting holes from an anode or a hole injection layer and transferring them to the light emitting layer. This is suitable. Specific examples thereof include an arylamine-based organic material, a conductive polymer, and a block copolymer having a conjugated portion and a non-conjugated portion together, but are not limited thereto.
상기 발광 물질로는 정공 수송층과 전자 수송층으로부터 정공과 전자를 각각 수송받아 결합시킴으로써 가시광선 영역의 빛을 낼 수 있는 물질로서, 형광이나 인광에 대한 양자 효율이 좋은 물질이 바람직하다. 구체적인 예로 8-히드록시-퀴놀린 알루미늄 착물(Alq3); 카르바졸 계열 화합물; 이량체화 스티릴(dimerized styryl) 화합물; BAlq; 10-히드록시벤조 퀴놀린-금속 화합물; 벤족사졸, 벤즈티아졸 및 벤즈이미다졸 계열의 화합물; 폴리(p-페닐렌비닐렌)(PPV) 계열의 고분자; 스피로(spiro) 화합물; 폴리플루오렌, 루브렌 등이 있으나, 이들에만 한정되는 것은 아니다.The light emitting material is a material capable of emitting light in the visible region by transporting and combining holes and electrons from the hole transport layer and the electron transport layer, respectively, and a material having good quantum efficiency with respect to fluorescence or phosphorescence is preferable. Specific examples thereof include 8-hydroxyquinoline aluminum complex (Alq 3 ); Carbazole series compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzo quinoline-metal compound; Benzoxazole, benzthiazole and benzimidazole series compounds; Poly (p-phenylenevinylene) (PPV) -based polymers; Spiro compounds; Polyfluorene, rubrene and the like, but are not limited thereto.
상기 발광층은 호스트 재료 및 도펀트 재료를 포함할 수 있다. 호스트 재료는 축합 방향족환 유도체 또는 헤테로환 함유 화합물 등이 있다. 구체적으로 축합 방향족환 유도체로는 안트라센 유도체, 피렌 유도체, 나프탈렌 유도체, 펜타센 유도체, 페난트렌 화합물, 플루오란텐 화합물 등이 있고, 헤테로환 함유 화합물로는 카바졸 유도체, 디벤조퓨란 유도체, 래더형 퓨란 화합물, 피리미딘 유도체 등이 있으나, 이에 한정되지 않는다.The light emitting layer may include a host material and a dopant material. The host material may be a condensed aromatic ring derivative or a hetero ring-containing compound. Specifically, the condensed aromatic ring derivatives include anthracene derivatives, pyrene derivatives, naphthalene derivatives, pentacene derivatives, phenanthrene compounds, and fluoranthene compounds, and the heterocyclic containing compounds include carbazole derivatives, dibenzofuran derivatives and ladder types. Furan compounds, pyrimidine derivatives, and the like, but are not limited thereto.
도펀트 재료로는 방향족 아민 유도체, 스트릴아민 화합물, 붕소 착체, 플루오란텐 화합물, 금속 착체 등이 있다. 구체적으로 방향족 아민 유도체로는 치환 또는 비치환된 아릴아미노기를 갖는 축합 방향족환 유도체로서, 아릴아미노기를 갖는 피렌, 안트라센, 크리센, 페리플란텐 등이 있으며, 스티릴아민 화합물로는 치환 또는 비치환된 아릴아민에 적어도 1개의 아릴비닐기가 치환되어 있는 화합물로, 아릴기, 실릴기, 알킬기, 사이클로알킬기 및 아릴아미노기로 이루어진 군에서 1 또는 2 이상 선택되는 치환기가 치환 또는 비치환된다. 구체적으로 스티릴아민, 스티릴디아민, 스티릴트리아민, 스티릴테트라아민 등이 있으나, 이에 한정되지 않는다. 또한, 금속 착체로는 이리듐 착체, 백금 착체 등이 있으나, 이에 한정되지 않는다.Dopant materials include aromatic amine derivatives, styrylamine compounds, boron complexes, fluoranthene compounds, metal complexes, and the like. Specifically, the aromatic amine derivatives include condensed aromatic ring derivatives having a substituted or unsubstituted arylamino group, and include pyrene, anthracene, chrysene and periplanthene having an arylamino group, and a styrylamine compound may be substituted or unsubstituted. At least one arylvinyl group is substituted with the above-described arylamine, and one or two or more substituents selected from the group consisting of aryl group, silyl group, alkyl group, cycloalkyl group and arylamino group are substituted or unsubstituted. Specifically, styrylamine, styryldiamine, styryltriamine, styryltetraamine and the like, but is not limited thereto. In addition, the metal complex includes, but is not limited to, an iridium complex, a platinum complex, and the like.
상기 전자 수송 물질로는 전자주입층으로부터 전자를 수취하여 발광층까지 전자를 수송하는 층으로 전자 수송 물질로는 음극으로부터 전자를 잘 주입 받아 발광층으로 옮겨줄 수 있는 물질로서, 전자에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 8-히드록시퀴놀린의 Al 착물; Alq3를 포함한 착물; 유기 라디칼 화합물; 히드록시플라본-금속 착물 등이 있으나, 이들에만 한정되는 것은 아니다. 전자 수송층은 종래기술에 따라 사용된 바와 같이 임의의 원하는 캐소드 물질과 함께 사용할 수 있다. 특히, 적절한 캐소드 물질의 예는 낮은 일함수를 가지고 알루미늄층 또는 실버층이 뒤따르는 통상적인 물질이다. 구체적으로 세슘, 바륨, 칼슘, 이테르븀 및 사마륨이고, 각 경우 알루미늄 층 또는 실버층이 뒤따른다.The electron transporting material is a layer that receives electrons from the electron injection layer and transports electrons to the light emitting layer. The electron transporting material is a material that can inject electrons well from the cathode and transfer them to the light emitting layer. This is suitable. Specific examples include Al complexes of 8-hydroxyquinoline; Complexes including Alq 3 ; Organic radical compounds; Hydroxyflavone-metal complexes and the like, but are not limited thereto. The electron transport layer can be used with any desired cathode material as used according to the prior art. In particular, examples of suitable cathode materials are conventional materials having a low work function followed by an aluminum or silver layer. Specifically cesium, barium, calcium, ytterbium and samarium, followed by aluminum layers or silver layers in each case.
상기 전자주입층은 전극으로부터 전자를 주입하는 층으로, 전자를 수송하는 능력을 갖고, 음극으로부터의 전자 주입 효과, 발광층 또는 발광 재료에 대하여 우수한 전자주입 효과를 가지며, 발광층에서 생성된 여기자의 정공주입층에의 이동을 방지하고, 또한, 박막형성능력이 우수한 화합물이 바람직하다. 구체적으로는 플루오레논, 안트라퀴노다이메탄, 다이페노퀴논, 티오피란 다이옥사이드, 옥사졸, 옥사다이아졸, 트리아졸, 이미다졸, 페릴렌테트라카복실산, 프레오레닐리덴 메탄, 안트론 등과 그들의 유도체, 금속 착체 화합물 및 질소 함유 5원환 유도체 등이 있으나, 이에 한정되지 않는다.The electron injection layer is a layer for injecting electrons from an electrode, has a capability of transporting electrons, has an electron injection effect from the cathode, excellent electron injection effect to the light emitting layer or the light emitting material, and hole injection of excitons generated in the light emitting layer The compound which prevents the movement to a layer and is excellent in thin film formation ability is preferable. Specifically, fluorenone, anthraquinodimethane, diphenoquinone, thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylenetetracarboxylic acid, preorenylidene methane, anthrone and the derivatives thereof, metal Complex compounds, nitrogen-containing five-membered ring derivatives, and the like, but are not limited thereto.
상기 금속 착체 화합물로서는 8-하이드록시퀴놀리나토 리튬, 비스(8-하이드록시퀴놀리나토)아연, 비스(8-하이드록시퀴놀리나토)구리, 비스(8-하이드록시퀴놀리나토)망간, 트리스(8-하이드록시퀴놀리나토)알루미늄, 트리스(2-메틸-8-하이드록시퀴놀리나토)알루미늄, 트리스(8-하이드록시퀴놀리나토)갈륨, 비스(10-하이드록시벤조[h]퀴놀리나토)베릴륨, 비스(10-하이드록시벤조[h]퀴놀리나토)아연, 비스(2-메틸-8-퀴놀리나토)클로로갈륨, 비스(2-메틸-8-퀴놀리나토)(o-크레졸라토)갈륨, 비스(2-메틸-8-퀴놀리나토)(1-나프톨라토)알루미늄, 비스(2-메틸-8-퀴놀리나토)(2-나프톨라토)갈륨 등이 있으나, 이에 한정되지 않는다.Examples of the metal complex compound include 8-hydroxyquinolinato lithium, bis (8-hydroxyquinolinato) zinc, bis (8-hydroxyquinolinato) copper, bis (8-hydroxyquinolinato) manganese, Tris (8-hydroxyquinolinato) aluminum, tris (2-methyl-8-hydroxyquinolinato) aluminum, tris (8-hydroxyquinolinato) gallium, bis (10-hydroxybenzo [h] Quinolinato) beryllium, bis (10-hydroxybenzo [h] quinolinato) zinc, bis (2-methyl-8-quinolinato) chlorogallium, bis (2-methyl-8-quinolinato) ( o-cresolato) gallium, bis (2-methyl-8-quinolinato) (1-naphtholato) aluminum, bis (2-methyl-8-quinolinato) (2-naphtolato) gallium, etc. It is not limited to this.
본 발명에 따른 유기 발광 소자는 사용되는 재료에 따라 전면 발광형, 후면 발광형 또는 양면 발광형일 수 있다.The organic light emitting device according to the present invention may be a top emission type, a bottom emission type or a double-sided emission type depending on the material used.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자 외에도 유기 태양 전지 또는 유기 트랜지스터에 포함될 수 있다.In addition, the compound represented by Formula 1 may be included in an organic solar cell or an organic transistor in addition to the organic light emitting device.
상기 화학식 1로 표시되는 화합물 및 이를 포함하는 유기 발광 소자의 제조는 이하 실시예에서 구체적으로 설명한다. 그러나 하기 실시예는 본 발명을 예시하기 위한 것이며, 본 발명의 범위가 이들에 의하여 한정되는 것은 아니다.Preparation of the compound represented by Chemical Formula 1 and an organic light emitting device including the same will be described in detail in the following Examples. However, the following examples are only for illustrating the present invention, and the scope of the present invention is not limited thereto.
제조예 1: 중간체 A-2의 제조Preparation Example 1 Preparation of Intermediate A-2
a) 중간체 A-1의 제조a) Preparation of Intermediate A-1
4-브로모디벤조[b,d]퓨란 (50 g, 122.0 mmol), 디벤조[b,d]퓨란-4-일보론산 (25.9 g, 122.0 mmol)를 테트라하이드로퓨란(THF)500 ml에 녹였다. 여기에 탄산칼슘(K2CO3) 2 M 용액(183 mL), 테트라키스(트리페닐포스핀)팔라듐(0) [Pd(PPh3)4](4.2 g, 3 mol%)을 넣고 12 시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔층을 분리한 뒤 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하여 얻은 혼합물을 클로로폼, 에틸아세테이트를 이용해 1회 재결정 하여 중간체 A-1(27.3 g, 수율 67 %;MS:[M+H]+=335)을 얻었다.4-bromodibenzo [b, d] furan (50 g, 122.0 mmol) and dibenzo [b, d] furan-4-ylboronic acid (25.9 g, 122.0 mmol) were dissolved in 500 ml of tetrahydrofuran (THF). . Add calcium carbonate (K 2 CO 3 ) 2 M solution (183 mL), tetrakis (triphenylphosphine) palladium (0) [Pd (PPh 3 ) 4 ] (4.2 g, 3 mol%), and add 12 hours. It was refluxed. After the reaction was completed, the mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated, dried over magnesium sulfate, and the filtrate was filtered and distilled under reduced pressure. The mixture was recrystallized once with chloroform and ethyl acetate, to obtain Intermediate A-1 (27.3 g, Yield 67%; MS: [M + H] + = 335).
b) 중간체 A-2의 제조b) Preparation of Intermediate A-2
중간체 A-1(25.0 g, 74.8 mmol)을 테트라하이드로퓨란(250 ml)에 녹인 후, -78 ℃로 온도를 낮추고 2.5 M n-부틸리튬(t-BuLi)(35.9 ml, 89.8 mmol)을 천천히 가하였다. 동일 온도에서 한 시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(21.1 ml, 112.2 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(100 ml)을 가하고 1.5 시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조후 에틸에테르에 분산시켜 두 시간 동안 교반한 후 여과하고 건조하여 중간체 A-2(23.8 g, 수율 84 %; MS:[M+H]+=379)을 제조하였다.Dissolve Intermediate A-1 (25.0 g, 74.8 mmol) in tetrahydrofuran (250 ml), lower the temperature to -78 ° C and slowly add 2.5 M n-butyllithium (t-BuLi) (35.9 ml, 89.8 mmol). Added. After stirring at the same temperature for 1 hour, triisopropylborate (B (OiPr) 3 ) (21.1 ml, 112.2 mmol) was added thereto, and the mixture was stirred for 3 hours while gradually raising the temperature to room temperature. 2N aqueous hydrochloric acid solution (100 ml) was added to the reaction mixture, which was stirred for 1.5 hours at room temperature. The resulting precipitate was filtered off, washed sequentially with water and ethyl ether, and dried in vacuo. After drying, the mixture was dispersed in ethyl ether, stirred for 2 hours, filtered, and dried to prepare intermediate A-2 (23.8 g, yield 84%; MS: [M + H] + = 379).
제조예 2: 중간체 B-2의 제조 Preparation Example 2 Preparation of Intermediate B-2
a) 중간체 B-1의 제조a) Preparation of Intermediate B-1
4-브로모디벤조[b,d]퓨란 (50 g, 122.0 mmol), 디벤조[b,d]티오펜-4-일보론산 (27.8 g, 122.0 mmol)를 테트라하이드로퓨란(THF)500 ml에 녹였다. 여기에 탄산칼슘(K2CO3) 2 M 용액(183 mL), 테트라키스(트리페닐포스핀)팔라듐(0) [Pd(PPh3)4](4.2 g, 3 mol%)을 넣고 12 시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔층을 분리한 뒤 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하여 얻은 혼합물을 클로로폼, 에틸아세테이트를 이용해 1회 재결정 하여 중간체 B-1(34.1 g, 수율 71 %; MS:[M+H]+=352)을 얻었다.4-bromodibenzo [b, d] furan (50 g, 122.0 mmol) and dibenzo [b, d] thiophen-4-ylboronic acid (27.8 g, 122.0 mmol) were added to 500 ml of tetrahydrofuran (THF). Melted. Add calcium carbonate (K 2 CO 3 ) 2 M solution (183 mL), tetrakis (triphenylphosphine) palladium (0) [Pd (PPh 3 ) 4 ] (4.2 g, 3 mol%), and add 12 hours. It was refluxed. After the reaction was completed, the mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated, dried over magnesium sulfate, and the filtrate was filtered and distilled under reduced pressure. The mixture was recrystallized once with chloroform and ethyl acetate, to obtain Intermediate B-1 (34.1 g, Yield 71%; MS: [M + H] + = 352).
b) 중간체 B-2의 제조b) Preparation of Intermediate B-2
중간체 B-1(25.0 g, 74.8 mmol)을 테트라하이드로퓨란(250 ml)에 녹인 후, -78 ℃로 온도를 낮추고 2.5 M n-부틸리튬(t-BuLi)(35.9 ml, 89.8 mmol)을 천천히 가하였다. 동일 온도에서 한 시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(21.1 ml, 112.2 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(100 ml)을 가하고 1.5 시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조후 에틸에테르에 분산시켜 두 시간 동안 교반한 후 여과하고 건조하여 중간체 B-2(24.5 g, 수율 87 %; MS:[M+H]+=395)을 제조하였다.Dissolve Intermediate B-1 (25.0 g, 74.8 mmol) in tetrahydrofuran (250 ml), lower the temperature to -78 ° C and slowly add 2.5 M n-butyllithium (t-BuLi) (35.9 ml, 89.8 mmol). Added. After stirring at the same temperature for 1 hour, triisopropylborate (B (OiPr) 3 ) (21.1 ml, 112.2 mmol) was added thereto, and the mixture was stirred for 3 hours while gradually raising the temperature to room temperature. 2N aqueous hydrochloric acid solution (100 ml) was added to the reaction mixture, which was stirred for 1.5 hours at room temperature. The resulting precipitate was filtered off, washed sequentially with water and ethyl ether, and dried in vacuo. After drying, the mixture was dispersed in ethyl ether, stirred for 2 hours, filtered, and dried to prepare intermediate B-2 (24.5 g, yield 87%; MS: [M + H] + = 395).
제조예 3: 중간체 C-2의 제조 Preparation Example 3 Preparation of Intermediate C-2
1) 중간체 C-1의 제조1) Preparation of Intermediate C-1
4-브로모디벤조[b,d]티오펜 (50 g, 114.5 mmol), 디벤조[b,d]티오펜-4-일보론산 (26.1 g, 114.5 mmol)를 테트라하이드로퓨란(THF)500 ml에 녹였다. 여기에 탄산칼슘(K2CO3) 2 M 용액(172 mL), 테트라키스(트리페닐포스핀)팔라듐(0) [Pd(PPh3)4](4.0 g, 3 mol%)을 넣고 12 시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔층을 분리한 뒤 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하여 얻은 혼합물을 클로로폼, 에틸아세테이트를 이용해 1회 재결정 하여 중간체 C-1(28.9 g, 수율 69 %; MS:[M+H]+=367)을 얻었다.500 ml of tetrahydrofuran (THF) with 4-bromodibenzo [b, d] thiophene (50 g, 114.5 mmol) and dibenzo [b, d] thiophen-4-ylboronic acid (26.1 g, 114.5 mmol) Dissolved in. To this was added calcium carbonate (K 2 CO 3 ) 2 M solution (172 mL), tetrakis (triphenylphosphine) palladium (0) [Pd (PPh 3 ) 4 ] (4.0 g, 3 mol%) and 12 hours It was refluxed. After the reaction was completed, the mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated, dried over magnesium sulfate, and the filtrate was filtered and distilled under reduced pressure. The mixture was recrystallized once with chloroform and ethyl acetate to give intermediate C-1 (28.9 g, yield 69%; MS: [M + H] + = 367).
2) 중간체 C-2의 제조2) Preparation of Intermediate C-2
중간체 C-1(25.0 g, 68.3 mmol)을 테트라하이드로퓨란(250 ml)에 녹인 후, -78 ℃로 온도를 낮추고 2.5 M n-부틸리튬(t-BuLi)(32.8 ml, 82.0 mmol)을 천천히 가하였다. 동일 온도에서 한 시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(23.6 ml, 102.5 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(100 ml)을 가하고 1.5 시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조후 에틸에테르에 분산시켜 두 시간 동안 교반한 후 여과하고 건조하여 중간체 C-2(21.5 g, 수율 77 %; MS:[M+H]+=411)을 제조하였다.Dissolve Intermediate C-1 (25.0 g, 68.3 mmol) in tetrahydrofuran (250 ml), lower the temperature to -78 ° C and slowly add 2.5 M n-butyllithium (t-BuLi) (32.8 ml, 82.0 mmol). Added. After stirring for 1 hour at the same temperature, triisopropylborate (B (OiPr) 3 ) (23.6 ml, 102.5 mmol) was added, and the mixture was stirred for 3 hours while gradually raising the temperature to room temperature. 2N aqueous hydrochloric acid solution (100 ml) was added to the reaction mixture, which was stirred for 1.5 hours at room temperature. The resulting precipitate was filtered off, washed sequentially with water and ethyl ether, and dried in vacuo. After drying, the mixture was dispersed in ethyl ether, stirred for 2 hours, filtered, and dried to prepare intermediate C-2 (21.5 g, yield 77%; MS: [M + H] + = 411).
제조예 4: 중간체 D-2의 제조Preparation Example 4 Preparation of Intermediate D-2
1) 중간체 D-1의 제조1) Preparation of Intermediate D-1
4,6-디브로모디벤조[b,d]퓨란 (50 g, 154.4 mmol), 디벤조[b,d]퓨란-4-일보론산 (68.7 g, 324.4 mmol)를 테트라하이드로퓨란(THF)500 ml에 녹였다. 여기에 탄산칼슘(K2CO3) 2 M 용액(463 mL), 테트라키스(트리페닐포스핀)팔라듐(0) [Pd(PPh3)4](10.7 g, 3 mol%)을 넣고 12 시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔층을 분리한 뒤 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하여 얻은 혼합물을 클로로폼, 에틸아세테이트를 이용해 1회 재결정 하여 중간체 D-1(56.4 g, 수율 73 %; MS:[M+H]+=501)을 얻었다.4,6-dibromodibenzo [b, d] furan (50 g, 154.4 mmol), dibenzo [b, d] furan-4-ylboronic acid (68.7 g, 324.4 mmol) was added to tetrahydrofuran (THF) 500 dissolved in ml. Add calcium carbonate (K 2 CO 3 ) 2 M solution (463 mL), tetrakis (triphenylphosphine) palladium (0) [Pd (PPh 3 ) 4 ] (10.7 g, 3 mol%), and add 12 hours. It was refluxed. After the reaction was completed, the mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated, dried over magnesium sulfate, and the filtrate was filtered and distilled under reduced pressure. The mixture was recrystallized once with chloroform and ethyl acetate to give intermediate D-1 (56.4 g, yield 73%; MS: [M + H] + = 501).
2) 중간체 D-2의 제조2) Preparation of Intermediate D-2
중간체 D-1(25.0 g, 50.0 mmol)을 테트라하이드로퓨란(250 ml)에 녹인 후, -78 ℃로 온도를 낮추고 2.5 M n-부틸리튬(t-BuLi)(24.0 ml, 60.0 mmol)을 천천히 가하였다. 동일 온도에서 한 시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(17.3 ml, 75.0 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(100 ml)을 가하고 1.5 시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조후 에틸에테르에 분산시켜 두 시간 동안 교반한 후 여과하고 건조하여 중간체 D-2(16.6 g, 수율 61 %; MS:[M+H]+=545)을 제조하였다.Dissolve Intermediate D-1 (25.0 g, 50.0 mmol) in tetrahydrofuran (250 ml), lower the temperature to -78 ° C and slowly add 2.5 M n-butyllithium (t-BuLi) (24.0 ml, 60.0 mmol). Added. After stirring at the same temperature for 1 hour, triisopropylborate (B (OiPr) 3 ) (17.3 ml, 75.0 mmol) was added thereto, and the mixture was stirred for 3 hours while gradually raising the temperature to room temperature. 2N aqueous hydrochloric acid solution (100 ml) was added to the reaction mixture, which was stirred for 1.5 hours at room temperature. The resulting precipitate was filtered off, washed sequentially with water and ethyl ether, and dried in vacuo. After drying, the mixture was dispersed in ethyl ether, stirred for 2 hours, filtered, and dried to prepare intermediate D-2 (16.6 g, yield 61%; MS: [M + H] + = 545).
제조예 5: 중간체 E-2의 제조Preparation Example 5 Preparation of Intermediate E-2
1) 중간체 E-1의 제조1) Preparation of Intermediate E-1
4,6-디브로모벤조[b,d]티오펜 (50 g, 147.1 mmol), 디벤조[b,d]퓨란-4-일보론산 (65.5 g, 309.0 mmol)를 테트라하이드로퓨란(THF)500 ml에 녹였다. 여기에 탄산칼슘(K2CO3) 2 M 용액(441 mL), 테트라키스(트리페닐포스핀)팔라듐(0) [Pd(PPh3)4](10.2 g, 3 mol%)을 넣고 12 시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔층을 분리한 뒤 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하여 얻은 혼합물을 클로로폼, 에틸아세테이트를 이용해 1회 재결정 하여 중간체 E-1(46.3 g, 수율 61 %; MS:[M+H]+=517)을 얻었다.4,6-dibromobenzo [b, d] thiophene (50 g, 147.1 mmol), dibenzo [b, d] furan-4-ylboronic acid (65.5 g, 309.0 mmol) was added to tetrahydrofuran (THF). Dissolved in 500 ml. To this was added calcium carbonate (K 2 CO 3 ) 2 M solution (441 mL), tetrakis (triphenylphosphine) palladium (0) [Pd (PPh 3 ) 4 ] (10.2 g, 3 mol%) and 12 hours It was refluxed. After the reaction was completed, the mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated and dried over magnesium sulfate, and the filtrate was filtered and distilled under reduced pressure. The mixture was recrystallized once with chloroform and ethyl acetate to give Intermediate E-1 (46.3 g, 61% yield; MS: [M + H] + = 517).
2) 중간체 E-2의 제조2) Preparation of Intermediate E-2
중간체 E-1(25.0 g, 48.4 mmol)을 테트라하이드로퓨란(250 ml)에 녹인 후, -78 ℃로 온도를 낮추고 2.5 M n-부틸리튬(t-BuLi)(23.3 ml, 58.1 mmol)을 천천히 가하였다. 동일 온도에서 한 시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(16.8 ml, 72.7 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(100 ml)을 가하고 1.5 시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조후 에틸에테르에 분산시켜 두 시간 동안 교반한 후 여과하고 건조하여 중간체 E-2(18.7 g, 수율 69 %; MS:[M+H]+=561)을 제조하였다.Dissolve Intermediate E-1 (25.0 g, 48.4 mmol) in tetrahydrofuran (250 ml), lower the temperature to -78 ° C and slowly add 2.5 M n-butyllithium (t-BuLi) (23.3 ml, 58.1 mmol). Added. After stirring at the same temperature for 1 hour, triisopropylborate (B (OiPr) 3 ) (16.8 ml, 72.7 mmol) was added, and the mixture was stirred for 3 hours while gradually raising the temperature to room temperature. 2N aqueous hydrochloric acid solution (100 ml) was added to the reaction mixture, which was stirred for 1.5 hours at room temperature. The resulting precipitate was filtered off, washed sequentially with water and ethyl ether, and dried in vacuo. After drying, the mixture was dispersed in ethyl ether, stirred for 2 hours, filtered, and dried to prepare intermediate E-2 (18.7 g, yield 69%; MS: [M + H] + = 561).
제조예 6: 중간체 F-2의 제조Preparation Example 6 Preparation of Intermediate F-2
1) 중간체 F-1의 제조1) Preparation of Intermediate F-1
4,6-디브로모디벤조[b,d]퓨란 (50 g, 154.4 mmol), 디벤조[b,d]티오펜-4-일보론산 (73.9 g, 324.4 mmol)를 테트라하이드로퓨란(THF)500 ml에 녹였다. 여기에 탄산칼슘(K2CO3) 2 M 용액(463 mL), 테트라키스(트리페닐포스핀)팔라듐(0) [Pd(PPh3)4](10.7 g, 3 mol%)을 넣고 12 시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔층을 분리한 뒤 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하여 얻은 혼합물을 클로로폼, 에틸아세테이트를 이용해 1회 재결정 하여 중간체 F-1(44.4 g, 수율 50 %; MS:[M+H]+=577)을 얻었다.4,6-dibromodibenzo [b, d] furan (50 g, 154.4 mmol), dibenzo [b, d] thiophen-4-ylboronic acid (73.9 g, 324.4 mmol) was added to tetrahydrofuran (THF). Dissolved in 500 ml. Add calcium carbonate (K 2 CO 3 ) 2 M solution (463 mL), tetrakis (triphenylphosphine) palladium (0) [Pd (PPh 3 ) 4 ] (10.7 g, 3 mol%), and add 12 hours. It was refluxed. After the reaction was completed, the mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated and dried over magnesium sulfate, and the filtrate was filtered and distilled under reduced pressure. The mixture was recrystallized once with chloroform and ethyl acetate to give Intermediate F-1 (44.4 g, Yield 50%; MS: [M + H] + = 577).
2) 중간체 F-2의 제조2) Preparation of Intermediate F-2
중간체 F-1(25.0 g, 43.4 mmol)을 테트라하이드로퓨란(250 ml)에 녹인 후, -78 ℃로 온도를 낮추고 2.5 M n-부틸리튬(t-BuLi)(20.8 ml, 43.4 mmol)을 천천히 가하였다. 동일 온도에서 한 시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(15.0 ml, 65.1 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(100 ml)을 가하고 1.5 시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조후 에틸에테르에 분산시켜 두 시간 동안 교반한 후 여과하고 건조하여 중간체 F-2 (19.1 g, 수율 70 %; MS:[M+H]+=577)을 제조하였다.Dissolve Intermediate F-1 (25.0 g, 43.4 mmol) in tetrahydrofuran (250 ml), lower the temperature to -78 ° C and slowly add 2.5 M n-butyllithium (t-BuLi) (20.8 ml, 43.4 mmol). Added. After stirring for 1 hour at the same temperature, triisopropylborate (B (OiPr) 3 ) (15.0 ml, 65.1 mmol) was added, and the mixture was stirred for 3 hours while gradually raising the temperature to room temperature. 2N aqueous hydrochloric acid solution (100 ml) was added to the reaction mixture, which was stirred for 1.5 hours at room temperature. The resulting precipitate was filtered off, washed sequentially with water and ethyl ether, and dried in vacuo. After drying, the mixture was dispersed in ethyl ether, stirred for 2 hours, filtered, and dried to prepare intermediate F-2 (19.1 g, yield 70%; MS: [M + H] + = 577).
제조예 6: 중간체 G-2의 제조 Preparation Example 6 Preparation of Intermediate G-2
1) 중간체 G-1의 제조1) Preparation of Intermediate G-1
4,6-디브로모벤조[b,d]티오펜 (50 g, 48.4 mmol), 디벤조[b,d]티오펜-4-일보론산 (70.5 g, 309.0 mmol)를 테트라하이드로퓨란(THF)500 ml에 녹였다. 여기에 탄산칼슘(K2CO3) 2 M 용액(441 mL), 테트라키스(트리페닐포스핀)팔라듐(0) [Pd(PPh3)4](10.2 g, 3 mol%)을 넣고 12 시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔층을 분리한 뒤 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하여 얻은 혼합물을 클로로폼, 에틸아세테이트를 이용해 1회 재결정 하여 중간체 G-1(48.4 g, 수율 60 %; MS:[M+H]+=549)을 얻었다.4,6-dibromobenzo [b, d] thiophene (50 g, 48.4 mmol), dibenzo [b, d] thiophen-4-ylboronic acid (70.5 g, 309.0 mmol) was added to tetrahydrofuran (THF Dissolved in 500 ml. To this was added calcium carbonate (K 2 CO 3 ) 2 M solution (441 mL), tetrakis (triphenylphosphine) palladium (0) [Pd (PPh 3 ) 4 ] (10.2 g, 3 mol%) and 12 hours It was refluxed. After the reaction was completed, the mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated, dried over magnesium sulfate, and the filtrate was filtered and distilled under reduced pressure. The mixture was recrystallized once with chloroform and ethyl acetate, to obtain Intermediate G-1 (48.4 g, Yield 60%; MS: [M + H] + = 549).
2) 중간체 G-2의 제조2) Preparation of Intermediate G-2
중간체 G-1(25.0 g, 45.6 mmol)을 테트라하이드로퓨란(250 ml)에 녹인 후, -78℃로 온도를 낮추고 2.5 M n-부틸리튬(t-BuLi)(21.9 ml, 45.6 mmol)을 천천히 가하였다. 동일 온도에서 한 시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(15.8 ml, 68.4 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(100 ml)을 가하고 1.5 시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조후 에틸에테르에 분산시켜 두 시간 동안 교반한 후 여과하고 건조하여 중간체 G-2 (15.9 g, 수율 59 %; MS:[M+H]+=593)을 제조하였다.Intermediate G-1 (25.0 g, 45.6 mmol) was dissolved in tetrahydrofuran (250 ml), then the temperature was lowered to -78 ° C and 2.5 M n-butyllithium (t-BuLi) (21.9 ml, 45.6 mmol) was slowly added. Added. After stirring at the same temperature for 1 hour, triisopropylborate (B (OiPr) 3 ) (15.8 ml, 68.4 mmol) was added thereto, and the mixture was stirred for 3 hours while gradually raising the temperature to room temperature. 2N aqueous hydrochloric acid solution (100 ml) was added to the reaction mixture, which was stirred for 1.5 hours at room temperature. The resulting precipitate was filtered off, washed sequentially with water and ethyl ether, and dried in vacuo. After drying, the mixture was dispersed in ethyl ether, stirred for 2 hours, filtered, and dried to prepare intermediate G-2 (15.9 g, yield 59%; MS: [M + H] + = 593).
제조예 7: 중간체 P-5의 제조Preparation Example 7 Preparation of Intermediate P-5
a) 중간체 P-1의 제조a) Preparation of Intermediate P-1
브로모-3-플루오로-2-요오드벤젠(1-bromo-3-fluoro-2-iodobenzene)(100 g, 333.5 mmol), 5-클로로-2-메톡시페닐보론산((5-chloro-2-methoxyphenyl)boronic acid)(62.2 g, 333.5 mmol)를 테트라하이드로퓨란(THF)800 ml에 녹였다. 여기에 탄산나트륨(Na2CO3) 2 M 용액(500 mL), 테트라키스(트리페닐포스핀)팔라듐(0) [Pd(PPh3)4](7.7 g, 6.7 mmol)을 넣고 12 시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔층을 분리한 뒤 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하여 얻은 혼합물을 클로로폼, 에탄올을 이용해 3회 재결정하여 중간체 P-1(53.7 g, 수율 51 %;MS:[M+H]+=314)을 얻었다.1-bromo-3-fluoro-2-iodobenzene (100 g, 333.5 mmol), 5-chloro-2-methoxyphenylboronic acid ((5-chloro- 2-methoxyphenyl) boronic acid) (62.2 g, 333.5 mmol) was dissolved in 800 ml of tetrahydrofuran (THF). Sodium carbonate (Na 2 CO 3 ) 2 M solution (500 mL) and tetrakis (triphenylphosphine) palladium (0) [Pd (PPh 3 ) 4 ] (7.7 g, 6.7 mmol) were added and refluxed for 12 hours. . After the reaction was completed, the mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated, dried over magnesium sulfate, and the filtrate was filtered and distilled under reduced pressure. The mixture was recrystallized three times with chloroform and ethanol to give intermediate P-1 (53.7 g, yield 51%; MS: [ M + H] + = 314).
b) 중간체 P-2의 제조b) preparation of intermediate P-2
중간체 P-1(50.0 g, 158.5 mmol)을 디클로로메탄(Dichlorometahne)(600 ml)에 녹인 뒤 0 ℃ 로 냉각시킨다. 보론트리브로마이드(boron tribromide)(15.8 ml, 166.4 mmol)를 천천히 적가한 뒤 12시간동안 교반하였다. 반응이 종료된 후 물로 3회 세척하고, 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하고 컬럼크로마토크래피로 정제하여 중간체 P-2(47.4 g, 수율 99 %;MS:[M+H]+=300)을 얻었다.Intermediate P-1 (50.0 g, 158.5 mmol) was dissolved in Dichlorometahne (600 ml) and cooled to 0 ° C. Boron tribromide (15.8 ml, 166.4 mmol) was slowly added dropwise and stirred for 12 hours. After the reaction was completed, washed three times with water, dried over magnesium sulfate (magnesium sulfate) and the filtrate was filtered under reduced pressure and purified by column chromatography to give the intermediate P-2 (47.4 g, 99% yield; MS: [M + H] + = 300).
c) 중간체 P-3의 제조c) preparation of intermediate P-3
중간체 P-2(40.0 g, 132.7 mmol)을 증류된 다이메틸포름아마이드(DMF)(400ml)에 녹인다. 이를 0 ℃ 로 냉각시키고, 여기에 나트륨 하이드리드(sodium hydride)(3.5 g, 145.9 mmol) 를 천천히 적가하였다. 20분동안 교반한 뒤 100℃에서 1시간동안 교반하였다. 반응이 종료된 후 상온으로 냉각하고, 에탄올(Ethanol) 100 ml을 천천히 넣었다. 위 혼합물을 감압증류 하여 얻은 혼합물을 클로로포름, 에틸아세테이트로 재결정하여 중간체 P-3(30.3 g, 수율 81 %;MS:[M+H]+=280)을 얻었다.Intermediate P-2 (40.0 g, 132.7 mmol) is dissolved in distilled dimethylformamide (DMF) (400 ml). It was cooled to 0 ° C., and sodium hydride (3.5 g, 145.9 mmol) was slowly added dropwise thereto. After stirring for 20 minutes, the mixture was stirred at 100 ° C. for 1 hour. After the reaction was completed and cooled to room temperature, 100 ml of ethanol (Ethanol) was slowly added. The mixture obtained by distillation under reduced pressure was recrystallized with chloroform and ethyl acetate to obtain intermediate P-3 (30.3 g, yield 81%; MS: [M + H] + = 280).
d) 중간체 P-4의 제조d) preparation of intermediate P-4
중간체 P-3(30.0 g, 106.6 mmol)을 테트라하이드로퓨란(300 ml)에 녹인 후, -78 ℃로 온도를 낮추고 1.7 M 터셔리-부틸리튬(t-BuLi)(62.7 ml, 106.6 mmol)을 천천히 가하였다. 동일 온도에서 한 시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(28.3 ml, 213.1 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(200 ml)을 가하고 1.5 시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조후 에틸에테르에 분산시켜 두 시간 동안 교반한 후 여과하고 건조하여 중간체 P-4(24.4 g, 수율 93 %; MS:[M+H]+=247)을 제조하였다.Intermediate P-3 (30.0 g, 106.6 mmol) was dissolved in tetrahydrofuran (300 ml), then cooled to -78 ° C and 1.7 M tert-butyllithium (t-BuLi) (62.7 ml, 106.6 mmol) was added. Slowly added. After stirring for 1 hour at the same temperature, triisopropylborate (B (OiPr) 3 ) (28.3 ml, 213.1 mmol) was added, and the mixture was stirred for 3 hours while gradually raising the temperature to room temperature. 2N aqueous hydrochloric acid solution (200 ml) was added to the reaction mixture, which was stirred for 1.5 hours at room temperature. The resulting precipitate was filtered off, washed sequentially with water and ethyl ether, and dried in vacuo. After drying, the mixture was dispersed in ethyl ether, stirred for 2 hours, filtered, and dried to prepare intermediate P-4 (24.4 g, yield 93%; MS: [M + H] + = 247).
d) 중간체 P-5의 제조d) preparation of intermediate P-5
중간체 P-4 (20.0 g, 81.2 mmol)과 2-클로로-4,6-디페닐-1,3,5-트리아진 (21.8 g, 81.2 mmol)을 테트라하이드로퓨란(250 ml)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(33.6 ml, 243.5 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](1.9 g, 2 mol%)을 넣은 후 4시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 중간체 P-5(32.4 g, 수율 92 %; MS:[M+H]+=434)를 제조하였다.Intermediate P-4 (20.0 g, 81.2 mmol) and 2-chloro-4,6-diphenyl-1,3,5-triazine (21.8 g, 81.2 mmol) were dispersed in tetrahydrofuran (250 ml) , 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) (33.6 ml, 243.5 mmol) was added thereto, followed by tetrakistriphenylphosphinopalladium [Pd (PPh 3 ) 4 ] (1.9 g, 2 mol%), followed by 4 Stirring to reflux for hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and dried to prepare intermediate P-5 (32.4 g, yield 92%; MS: [M + H] + = 434).
제조예 8: 중간체 Q-5의 제조Preparation Example 8 Preparation of Intermediate Q-5
a) 중간체 Q-1의 제조a) Preparation of Intermediate Q-1
브로모-3-플루오로-4-요오드벤젠(1-bromo-3-fluoro-4-iodobenzene)(50 g, 166.6 mmol), 5-클로로-2-메톡시페닐보론산((5-chloro-2-methoxyphenyl)boronic acid)(31.1 g, 166.6 mmol)를 테트라하이드로퓨란(THF)800 ml에 녹였다. 여기에 탄산나트륨(Na2CO3) 2 M 용액(250 mL), 테트라키스(트리페닐포스핀)팔라듐(0) [Pd(PPh3)4](3.8 g, 3 mol%)을 넣고 12 시간 환류시켰다. 반응이 끝난 후 상온으로 냉각시키고, 생성된 혼합물을 물과 톨루엔으로 3회 추출하였다. 톨루엔층을 분리한 뒤 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하여 얻은 혼합물을 클로로폼, 에탄올을 이용해 3회 재결정 하여 중간체 Q-1(27.5 g, 수율 51 %; MS:[M+H]+=314)을 얻었다.1-bromo-3-fluoro-4-iodobenzene (50 g, 166.6 mmol), 5-chloro-2-methoxyphenylboronic acid ((5-chloro- 2-methoxyphenyl) boronic acid) (31.1 g, 166.6 mmol) was dissolved in 800 ml of tetrahydrofuran (THF). Add sodium carbonate (Na 2 CO 3 ) 2 M solution (250 mL), tetrakis (triphenylphosphine) palladium (0) [Pd (PPh 3 ) 4 ] (3.8 g, 3 mol%), and reflux for 12 hours. I was. After the reaction was completed, the mixture was cooled to room temperature, and the resulting mixture was extracted three times with water and toluene. The toluene layer was separated, dried over magnesium sulfate, and the filtrate was filtered and distilled under reduced pressure. The mixture was recrystallized three times with chloroform and ethanol to give an intermediate Q-1 (27.5 g, yield 51%; MS: [ M + H] + = 314).
b) 중간체 Q-2의 제조b) Preparation of Intermediate Q-2
중간체 Q-1(25.0 g, 150 mmol)을 디클로로메탄(Dichlorometahne)(300 ml)에 녹인 뒤 0 ℃ 로 냉각시킨다. 보론트리브로마이드(boron tribromide)(7.9 ml, 83.2 mmol)를 천천히 적가한 뒤 12시간동안 교반하였다. 반응이 종료된 후 물로 3회 세척하고, 황산마그네슘(magnesium sulfate)으로 건조하여 여과한 여액을 감압증류하고 컬럼크로마토크래피로 정제하여 중간체 Q-2(23.7 g, 수율 99 %; MS:[M+H]+=300)을 얻었다.Intermediate Q-1 (25.0 g, 150 mmol) is dissolved in Dichlorometahne (300 ml) and cooled to 0 ° C. Boron tribromide (7.9 ml, 83.2 mmol) was slowly added dropwise and stirred for 12 hours. After completion of the reaction, the mixture was washed three times with water, dried over magnesium sulfate (magnesium sulfate), and the filtrate was filtered under reduced pressure and purified by column chromatography to give an intermediate Q-2 (23.7 g, yield 99%; MS: [M + H] + = 300).
c) 중간체 Q-3의 제조c) preparation of intermediate Q-3
중간체 Q-2(20.0 g, 66.4 mmol)을 증류된 다이메틸포름아마이드(DMF)(200ml)에 녹인다. 이를 0 ℃ 로 냉각시키고, 여기에 나트륨 하이드리드(sodium hydride)(1.8 g, 72.9 mmol) 를 천천히 적가하였다. 20분동안 교반한 뒤 100℃에서 1시간동안 교반하였다. 반응이 종료된 후 상온으로 냉각하고, 에탄올(Ethanol) 100 ml을 천천히 넣었다. 위 혼합물을 감압증류 하여 얻은 혼합물을 클로로포름, 에틸아세테이트로 재결정하여 중간체 Q-3(15.2 g, 수율 81 %;MS:[M+H]+=280)을 얻었다.Intermediate Q-2 (20.0 g, 66.4 mmol) is dissolved in distilled dimethylformamide (DMF) (200 ml). It was cooled to 0 ° C. and sodium hydride (1.8 g, 72.9 mmol) was slowly added dropwise thereto. After stirring for 20 minutes, the mixture was stirred at 100 ° C. for 1 hour. After the reaction was completed and cooled to room temperature, 100 ml of ethanol (Ethanol) was slowly added. The mixture obtained by distillation under reduced pressure was recrystallized with chloroform and ethyl acetate to give an intermediate Q-3 (15.2 g, yield 81%; MS: [M + H] + = 280).
d) 중간체 Q-4의 제조d) Preparation of Intermediate Q-4
중간체 Q-3(15.0 g, 53.3 mmol)을 테트라하이드로퓨란(150 ml)에 녹인 후, -78 ℃로 온도를 낮추고 1.7 M 터셔리-부틸리튬(t-BuLi)(31.8 ml, 53.3 mmol)을 천천히 가하였다. 동일 온도에서 한 시간 동안 교반한 후 트리아이소프로필보레이트(B(OiPr)3)(14.2 ml, 107.0 mmol)을 가하고, 상온으로 온도를 서서히 올리면서 3시간동안 교반하였다. 반응 혼합물에 2 N 염산수용액(100 ml)을 가하고 1.5 시간 동안 상온에서 교반하였다. 생성된 침전물을 거르고 물과 에틸에테르(ethyl ether)로 차례로 씻은 후 진공 건조하였다. 건조후 에틸에테르에 분산시켜 두 시간 동안 교반한 후 여과하고 건조하여 중간체 Q-4(12.2 g, 수율 93 %; MS:[M+H]+=247)을 제조하였다.Intermediate Q-3 (15.0 g, 53.3 mmol) was dissolved in tetrahydrofuran (150 ml), then the temperature was lowered to -78 ° C and 1.7 M tert-butyllithium (t-BuLi) (31.8 ml, 53.3 mmol) was added. Slowly added. After stirring for 1 hour at the same temperature, triisopropylborate (B (OiPr) 3 ) (14.2 ml, 107.0 mmol) was added, and the mixture was stirred for 3 hours while gradually raising the temperature to room temperature. 2N aqueous hydrochloric acid solution (100 ml) was added to the reaction mixture, which was stirred for 1.5 hours at room temperature. The resulting precipitate was filtered off, washed sequentially with water and ethyl ether, and dried in vacuo. After drying, the mixture was dispersed in ethyl ether, stirred for 2 hours, filtered, and dried to prepare intermediate Q-4 (12.2 g, yield 93%; MS: [M + H] + = 247).
e) 중간체 Q-5의 제조e) Preparation of Intermediate Q-5
중간체 Q-4(10.0 g, 40.6 mmol)과 2-chloro-4,6-diphenyl-1,3,5-triazine(10.9 g, 40.6 mmol)을 테트라하이드로퓨란(150 ml)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(12 ml, 122 mmol)을 첨가하고 테트라키스트리페닐포스피노팔라듐[Pd(PPh3)4](1.0 g, 2 mol%)을 넣은 후 4시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 중간체 Q-5(16.2 g, 수율 92 %; MS:[M+H]+=434)를 제조하였다.Intermediate Q-4 (10.0 g, 40.6 mmol) and 2-chloro-4,6-diphenyl-1,3,5-triazine (10.9 g, 40.6 mmol) were dispersed in tetrahydrofuran (150 ml), followed by 2M. Aqueous potassium carbonate solution (aq. K 2 CO 3 ) (12 ml, 122 mmol) was added and tetrakistriphenylphosphinopalladium [Pd (PPh 3 ) 4 ] (1.0 g, 2 mol%) was added for 4 hours. Stirring to reflux. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized from tetrahydrofuran and ethyl acetate, filtered and dried to prepare intermediate Q-5 (16.2 g, yield 92%; MS: [M + H] + = 434).
실시예 1: 화합물 1의 제조Example 1 Preparation of Compound 1
중간체 P-5 (15.0 g, 34.6 mmol)과 중간체 A-2 (13.1 g, 34.6 mmol)을 테트라하이드로퓨란(150 ml)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(12 ml, 52 mmol)을 첨가하고 비스(트리 터셔리-부틸포스핀)팔라듐 [Pd(PPh3)4](0.5 g, 3 mol%)을 넣은 후 4시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 1(9.6 g, 수율 38 %; MS:[M+H]+=732)를 제조하였다.Intermediate P-5 (15.0 g, 34.6 mmol) and Intermediate A-2 (13.1 g, 34.6 mmol) were dispersed in tetrahydrofuran (150 ml), followed by 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) (12 ml, 52 mmol) was added and bis (tri tert-butylphosphine) palladium [Pd (PPh 3 ) 4 ] (0.5 g, 3 mol%) was added thereto, followed by stirring under reflux for 4 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized with tetrahydrofuran and ethyl acetate, filtered and dried to give compound 1 (9.6 g, yield 38%; MS: [M + H] + = 732).
실시예 2: 화합물 2의 제조Example 2: Preparation of Compound 2
중간체 A-2 대신 중간체 B-2(13.6 g, 34.6 mmol) 을 사용한 것 외에는 실시예 1의 화합물 1의 제조와 동일한 방법으로 화합물 2 (11.4 g, 수율 44 %; MS:[M+H]+=748) 을 제조하였다.Compound 2 (11.4 g, yield 44%; MS: [M + H] + in the same manner as in the preparation of compound 1 of Example 1, except that Intermediate B-2 (13.6 g, 34.6 mmol) was used instead of Intermediate A-2. = 748) was prepared.
실시예 3: 화합물 3의 제조Example 3: Preparation of Compound 3
중간체 A-2 대신 중간체 C-2(14.2 g, 34.6 mmol)을 사용한 것 외에는 실시예 1의 화합물 1의 제조와 동일한 방법으로 화합물 3 (10.6 g, 수율 40 %; MS:[M+H]+=764)을 제조하였다.Compound 3 (10.6 g, yield 40%; MS: [M + H] + in the same manner as in the preparation of compound 1 of Example 1, except that Intermediate C-2 (14.2 g, 34.6 mmol) was used instead of Intermediate A-2. = 764) was prepared.
실시예 4: 화합물 4의 제조Example 4: Preparation of Compound 4
중간체 Q-5 (15.0 g, 34.6 mmol)과 중간체 A-2 (13.1 g, 34.6 mmol)을 테트라하이드로퓨란(150 ml)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(12 ml, 52 mmol)을 첨가하고 비스(트리 터셔리-부틸포스핀)팔라듐 [Pd(PPh3)4](0.5 g, 3 mol%)을 넣은 후 4시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 4(11.1 g, 수율 44 %; MS:[M+H]+=732)를 제조하였다.Intermediate Q-5 (15.0 g, 34.6 mmol) and Intermediate A-2 (13.1 g, 34.6 mmol) were dispersed in tetrahydrofuran (150 ml), followed by 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) (12 ml, 52 mmol) was added and bis (tri tert-butylphosphine) palladium [Pd (PPh 3 ) 4 ] (0.5 g, 3 mol%) was added thereto, followed by stirring under reflux for 4 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized with tetrahydrofuran and ethyl acetate, filtered and dried to give compound 4 (11.1 g, yield 44%; MS: [M + H] + = 732).
실시예 5: 화합물 5의 제조Example 5: Preparation of Compound 5
중간체 A-2 대신 중간체 B-2(13.6 g, 34.6 mmol)을 사용한 것 외에는 실시예 4의 화합물 4의 제조와 동일한 방법으로 화합물 5 (13.2 g, 수율 51 %; MS:[M+H]+=748)을 제조하였다.Compound 5 (13.2 g, yield 51%; MS: [M + H] + in the same manner as in the preparation of compound 4 of Example 4, except that Intermediate B-2 (13.6 g, 34.6 mmol) was used instead of Intermediate A-2. = 748).
실시예 6: 화합물 6의 제조 Example 6: Preparation of Compound 6
중간체 A-2 대신 중간체 C-2(14.2 g, 34.6 mmol) 을 사용한 것 외에는 실시예 4의 화합물 4의 제조와 동일한 방법으로 화합물 6 (7.1 g, 수율 27 %; MS:[M+H]+=764)을 제조하였다.Compound 6 (7.1 g, yield 27%; MS: [M + H] + in the same manner as in the preparation of compound 4 of Example 4, except that Intermediate C-2 (14.2 g, 34.6 mmol) was used instead of Intermediate A-2. = 764) was prepared.
실시예 7: 화합물 7의 제조Example 7: Preparation of Compound 7
2-클로로-4,6-디페닐-1,3,5-트리아진 (10.0 g, 37.4 mmol)과 중간체 D-2 (20.4 g, 34.6 mmol)을 테트라하이드로퓨란(150 ml)에 분산시킨 후, 2M 탄산칼륨수용액(aq. K2CO3)(56 ml, 112 mmol)을 첨가하고 비스(트리 터셔리-부틸포스핀)팔라듐 [Pd(PPh3)4](0.6 g, 3 mol%)을 넣은 후 4시간 동안 교반 환류하였다. 상온으로 온도를 낮추고 생성된 고체를 여과하였다. 여과된 고체를 테트라하이드로퓨란과 에틸아세테이트로 재결정하고 여과한 뒤, 건조하여 화합물 7 (11.2 g, 수율 41 %; MS:[M+H]+=732)를 제조하였다.2-chloro-4,6-diphenyl-1,3,5-triazine (10.0 g, 37.4 mmol) and intermediate D-2 (20.4 g, 34.6 mmol) were dispersed in tetrahydrofuran (150 ml) , 2M aqueous potassium carbonate solution (aq. K 2 CO 3 ) (56 ml, 112 mmol) was added and bis (tri tertary-butylphosphine) palladium [Pd (PPh 3 ) 4 ] (0.6 g, 3 mol%) After stirring, the mixture was refluxed for 4 hours. The temperature was lowered to room temperature and the resulting solid was filtered. The filtered solid was recrystallized with tetrahydrofuran and ethyl acetate, filtered and dried to give compound 7 (11.2 g, yield 41%; MS: [M + H] + = 732).
실시예 8: 화합물 8의 제조Example 8: Preparation of Compound 8
중간체 D-2 대신 중간체 E-2(21.0 g, 37.4 mmol) 을 사용한 것 외에는 실시예 7의 화합물 7의 제조와 동일한 방법으로 화합물 8 (14.8 g, 수율 53 %; MS:[M+H]+=748) 을 제조하였다.Compound 8 (14.8 g, yield 53%; MS: [M + H] + in the same manner as in the preparation of compound 7 of Example 7, except that Intermediate E-2 (21.0 g, 37.4 mmol) was used instead of Intermediate D-2. = 748) was prepared.
실시예 9: 화합물 9의 제조Example 9: Preparation of Compound 9
실시예 D-2 대신 실시예 F-2(21.0 g, 37.4 mmol) 을 사용한 것 외에는 실시예 7의 화합물 7의 제조와 동일한 방법으로 화합물 9 (14.0 g, 수율 49 %; MS:[M+H]+=764) 을 제조하였다.Compound 9 (14.0 g, yield 49%; MS: [M + H] in the same manner as in the preparation of compound 7 of Example 7, except that Example F-2 (21.0 g, 37.4 mmol) was used instead of Example D-2. ] + = 764).
실시예 10: 화합물 10의 제조Example 10 Preparation of Compound 10
실시예 D-2 대신 실시예 G-2 (21.0 g, 37.4 mmol)을 사용한 것 외에는 실시예 7의 화합물 7의 제조와 동일한 방법으로 화합물 10 (12.8 g, 수율 44 %; MS:[M+H]+=780)을 제조하였다.Compound 10 (12.8 g, yield 44%; MS: [M + H] in the same manner as in the preparation of compound 7 of Example 7, except that Example G-2 (21.0 g, 37.4 mmol) was used instead of Example D-2. ] + = 780).
<실험예 1>Experimental Example 1
ITO(indium tin oxide)가 1,300Å의 두께로 박막 코팅된 유리 기판을 세제를 녹인 증류수에 넣고 초음파로 세척하였다. 이때, 세제로는 피셔사(Fischer Co.) 제품을 사용하였으며, 증류수로는 밀리포어사(Millipore Co.) 제품의 필터(Filter)로 2차로 걸러진 증류수를 사용하였다. ITO를 30분간 세척한 후 증류수로 2회 반복하여 초음파 세척을 10분간 진행하였다. 증류수 세척이 끝난 후, 이소프로필알콜, 아세톤, 메탄올의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 수송시켰다. 또한, 산소 플라즈마를 이용하여 상기 기판을 5분간 세정한 후 진공 증착기로 기판을 수송시켰다.The glass substrate coated with ITO (indium tin oxide) having a thickness of 1,300 kPa was put in distilled water in which detergent was dissolved and ultrasonically cleaned. In this case, Fischer Co. was used as a detergent, and distilled water was filtered secondly as a filter of Millipore Co. as a distilled water. After ITO was washed for 30 minutes, ultrasonic washing was performed twice with distilled water for 10 minutes. After washing the distilled water, ultrasonic washing with a solvent of isopropyl alcohol, acetone, methanol, dried and transported to a plasma cleaner. In addition, the substrate was cleaned for 5 minutes using an oxygen plasma, and then the substrate was transferred to a vacuum evaporator.
상기와 같이 준비된 ITO 투명 전극 위에 하기 HI-1 화합물을 50Å의 두께로 열 진공 증착하여 정공주입층을 형성하였다. 상기 정공주입층 위에 하기 HT-1 화합물을 250Å의 두께로 열 진공 증착하여 정공수송층을 형성하고, 상기 정공수송층 위에 하기 HT-2 화합물을 50Å 두께로 진공 증착하여 전자차단층을 형성하였다. 상기 전자차단층 위에 발광층으로서 앞서 실시예 1에서 제조한 화합물 1, 하기 YGH-1 화합물, 및 인광도펀트 YGD-1을 44:44:12의 중량비로 공증착하여 400Å 두께의 발광층을 형성하였다. 상기 발광층 위에 하기 ET-1 화합물을 250Å의 두께로 진공 증착하여 전자수송층을 형성하고, 상기 전자수송층 위에 하기 ET-2 화합물 및 Li를 98:2의 중량비로 진공 증착하여 100Å 두께의 전자주입층을 형성하였다. 상기 전자주입층 위에 1000Å 두께로 알루미늄을 증착하여 음극을 형성하였다.On the ITO transparent electrode prepared as above, the following HI-1 compound was thermally vacuum deposited to a thickness of 50 kPa to form a hole injection layer. A hole transport layer was formed by thermal vacuum deposition of the following HT-1 compound to a thickness of 250 kPa on the hole injection layer, and an electron blocking layer was formed by vacuum depositing the following HT-2 compound to a thickness of 50 kPa on the hole transport layer. Compound 1, the following YGH-1 compound, and phosphorescent dopant YGD-1, which were prepared in Example 1 as a light emitting layer on the electron blocking layer, were co-deposited at a weight ratio of 44:44:12 to form a light emitting layer having a thickness of 400 kHz. The following ET-1 compound was vacuum deposited to a thickness of 250 kPa on the light emitting layer to form an electron transport layer. Formed. Aluminum was deposited to a thickness of 1000 Å on the electron injection layer to form a cathode.
상기의 과정에서 유기물의 증착속도는 0.4 ~ 0.7 Å/sec를 유지하였고, 알루미늄은 2 Å/sec의 증착 속도를 유지하였으며, 증착시 진공도는 1 × 10-7 ~ 5 × 10-8 torr를 유지하였다.In the above process, the deposition rate of the organic material was maintained at 0.4 ~ 0.7 Å / sec, the aluminum was maintained at the deposition rate of 2 Å / sec, the vacuum during deposition was maintained at 1 × 10 -7 ~ 5 × 10 -8 torr It was.
<실험예 2 내지 10>Experimental Examples 2 to 10
상기 실험예 1에서 화합물 1 대신 하기 표 1에 기재된 화합물을 사용하는 것을 제외하고는, 상기 실험예 1과 동일한 방법으로 유기 발광 소자를 제조하였다.An organic light emitting diode was manufactured according to the same method as Experimental Example 1 except for using the compound described in Table 1 below instead of compound 1 in Experimental Example 1.
<비교실험예 1 내지 4><Comparative Experimental Examples 1 to 4>
상기 실험예 1에서 화합물 1 대신 하기 표 1에 기재된 화합물을 사용하는 것을 제외하고는, 상기 실험예 1과 동일한 방법으로 유기 발광 소자를 제조하였다.An organic light emitting diode was manufactured according to the same method as Experimental Example 1 except for using the compound described in Table 1 below instead of compound 1 in Experimental Example 1.
한편, 하기 표 1의 CE1 내지 CE4의 화합물은 하기와 같다.On the other hand, the compounds of CE1 to CE4 in Table 1 are as follows.
상기 실험예 및 비교실험예에서 유기 발광 소자를 10mA/cm2의 전류 밀도에서 전압과 효율을 측정하였고, 50mA/cm2의 전류 밀도에서 수명을 측정하여 그 결과를 하기 표 1에 나타내었다. 이때, LT95는 초기 휘도 대비 95%가 되는 시간(hr)을 의미한다In the above experimental examples and comparative examples, the organic light emitting diodes were measured voltage and efficiency at a current density of 10 mA / cm 2 , and lifespan was measured at a current density of 50 mA / cm 2 , and the results are shown in Table 1 below. In this case, LT 95 refers to a time (hr) that becomes 95% of the initial luminance.
상기 표 1에서 나타난 바와 같이, 본 발명의 화합물을 발광층 물질로 사용한 실험예의 경우, 비교실험예에 비하여 효율 및 수명이 우수한 특성을 나타내는 것을 확인했다. 이는 디벤조퓨란 혹은 디벤조싸이오펜기가 3개 치환됨에 따라 전기안정성이 증가한 것으로 예측된다.As shown in Table 1, in the case of the experimental example using the compound of the present invention as a light emitting layer material, it was confirmed that the efficiency and life is superior to the comparative example. This is expected to increase the electrical stability as the dibenzofuran or dibenzothiophene group is substituted three.
[부호의 설명][Description of the code]
1: 기판 2: 양극1: substrate 2: anode
3: 발광층 4: 음극3: light emitting layer 4: cathode
5: 정공주입층 6: 정공수송층5: hole injection layer 6: hole transport layer
7: 전자차단층 8: 전자수송층7: electron blocking layer 8: electron transport layer
9: 전자주입층9: electron injection layer
Claims (9)
- 하기 화학식 1로 표시되는 화합물:Compound represented by the following formula (1):[화학식 1][Formula 1]상기 화학식 1에서,In Chemical Formula 1,X는 각각 독립적으로 N 또는 CH이되, X 중 2개 이상이 N이고,Each X is independently N or CH, at least two of X is N,Y1은 N, O 또는 S이고,Y 1 is N, O or S,Y2 및 Y3은 각각 독립적으로 O 또는 S이고,Y 2 and Y 3 are each independently O or S,Ar1 및 Ar2는 각각 독립적으로 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 N, O, S 및 Si로 구성되는 군으로부터 선택되는 어느 하나 이상의 헤테로 원자를 포함하는 C2-60 헤테로아릴이고,Ar 1 and Ar 2 are each independently substituted or unsubstituted C 6-60 aryl; Or C 2-60 heteroaryl including any one or more hetero atoms selected from the group consisting of substituted or unsubstituted N, O, S and Si,R1 내지 R6은 각각 독립적으로 할로겐; 히드록시; 시아노; 니트릴; 니트로; 아미노; 치환 또는 비치환된 C1-60 알킬; 치환 또는 비치환된 C1-60 할로알킬; 치환 또는 비치환된 C1-60 티오알킬; 치환 또는 비치환된 C1-60 알콕시; 치환 또는 비치환된 C1-60 할로알콕시; 치환 또는 비치환된 C3-60 사이클로알킬; 치환 또는 비치환된 C1-60 알케닐; 치환 또는 비치환된 C6-60 아릴; 치환 또는 비치환된 C6-60 아릴옥시; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴이고,R 1 to R 6 are each independently halogen; Hydroxy; Cyano; Nitrile; Nitro; Amino; Substituted or unsubstituted C 1-60 alkyl; Substituted or unsubstituted C 1-60 haloalkyl; Substituted or unsubstituted C 1-60 thioalkyl; Substituted or unsubstituted C 1-60 alkoxy; Substituted or unsubstituted C 1-60 haloalkoxy; Substituted or unsubstituted C 3-60 cycloalkyl; Substituted or unsubstituted C 1-60 alkenyl; Substituted or unsubstituted C 6-60 aryl; Substituted or unsubstituted C 6-60 aryloxy; Or C 2-60 heteroaryl including one or more of substituted or unsubstituted O, N, Si, and S,a, b, c, d 및 e는 각각 독립적으로 0 내지 3의 정수이고,a, b, c, d and e are each independently an integer of 0 to 3,f는 0 내지 4의 정수이다.f is an integer of 0-4.
- 제1항에 있어서,The method of claim 1,X는 모두 N인, 화합물.X is all N.
- 제1항에 있어서,The method of claim 1,Ar1 및 Ar2는 페닐인, 화합물.Ar 1 and Ar 2 are phenyl.
- 제1항에 있어서,The method of claim 1,Y1은 O 또는 S인, 화합물.Y 1 is O or S.
- 제1항에 있어서,The method of claim 1,a, b, c, d, e 및 f는 0인, 화합물.wherein a, b, c, d, e and f are zero.
- 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물층을 포함하는 유기 발광 소자로서, 상기 유기물층 중 1층 이상은 제1항 내지 제6항 중 어느 하나의 항에 따른 화합물을 포함하는 것인, 유기 발광 소자.A first electrode; A second electrode provided to face the first electrode; And at least one organic material layer provided between the first electrode and the second electrode, wherein at least one of the organic material layers comprises a compound according to any one of claims 1 to 6. That is, an organic light emitting device.
- 제7항에 있어서,The method of claim 7, wherein상기 유기물층은 발광층을 포함할 수 있고, 상기 발광층은 2종 이상의 호스트 물질을 포함하는, 유기 발광 소자.The organic material layer may include a light emitting layer, and the light emitting layer includes two or more host materials.
- 제8항에 있어서,The method of claim 8,상기 2종 이상의 호스트 물질은 상기 화학식 1로 표시되는 화합물을 포함하는, 유기 발광 소자.The two or more host materials include a compound represented by Formula 1, an organic light emitting device.
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