WO2020001762A1

WO2020001762A1 - Deposition apparatus, deposition system, and method of depositing a seed layer

Info

Publication number: WO2020001762A1
Application number: PCT/EP2018/067269
Authority: WO
Inventors: Ralph Lindenberg
Original assignee: Applied Materials, Inc.
Priority date: 2018-06-27
Filing date: 2018-06-27
Publication date: 2020-01-02
Also published as: CN215163072U

Abstract

A deposition apparatus is described. The deposition apparatus includes a vacuum chamber sized to accommodate a rectangular large area substrate of generation GEN 2 or higher, and an array of deposition sources having at least a first deposition source, a second deposition source, and a third deposition source having a target pitch in a first direction, the array of deposition sources being configured to deposit a material in a processing area in the vacuum chamber in a stationary deposition process, wherein a ratio of a deposition source pitch to a deposition source dimension in the first direction is 1.8 or above.

Description

DEPOSITION APPARATUS, DEPOSITION SYSTEM, AND METHOD OF

DEPOSITING A SEED LAYER

TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate to layer deposition, particularly to layer deposition by physical vapor deposition, such as sputtering. Further, embodiments relate to deposition systems depositing layers of different thicknesses, such as a seed layer or adhesion promotion layer and a thick layer. Embodiments of the present disclosure particularly relate to a deposition apparatus, a deposition system and a method of depositing a layer stack.

BACKGROUND

[0002] Several methods are known for depositing a material on a substrate. For instance, substrates may be coated by a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a plasma enhanced chemical vapor deposition (PECVD) process etc. Typically, the process is performed in a process apparatus or process chamber, where the substrate to be coated is located. A deposition material is provided in the apparatus. In the case where a PVD process is performed, the deposition material may, e.g., be sputtered from a target. A plurality of materials may be used for deposition on a substrate. Among them, many different metals can be used but also oxides, nitrides or carbides. Typically, a PVD process is suitable for thin film coatings.

[0003] Coated materials may be used in several applications and in several technical fields. For instance, an application lies in the field of microelectronics, such as generating semiconductor devices. Also, substrates for displays are often coated by a PVD process, wherein large area substrates are processed.

[0004] For processing of large area substrates, for example, in the display industry, dynamic deposition processes may be used wherein the substrate is moved along one or more deposition sources. Yet, a plurality of substrate processing applications utilize a static deposition process. For a static deposition process, the substrate is moved in a deposition area adjacent to an array of deposition sources. The array of deposition sources may include three or more deposition sources spaced apart from each other. Typically, an area of deposition sources may have a pitch indicating the distance between neighboring deposition sources.

[0005] Substrate processing systems for large area substrates can be provided for manufacturing a stack of layers, wherein the first layer is deposited and a second layer is deposited over the first layer. For example, the first layer may be a seed layer or an adhesive layer that is thin as compared to the second layer. A first array of deposition sources may be provided for the first layer and a second area of deposition sources may be provided for the second layer. Each of the arrays of deposition sources include a plurality of deposition sources and, thus, a plurality of targets having the material to be deposited.

[0006] The number of deposition sources and/or the number of targets, which may include expensive materials, increase the material cost of system (MCOS). In light thereof, it is beneficial to provide an improved deposition apparatus, and improved deposition system and an improved method of manufacturing a layer stack, particularly for thin layers or layer stacks including thin layers.

SUMMARY

[0007] In light of the above, a deposition apparatus, a deposition system and method of manufacturing a layer stack are provided. Further aspects, advantages, and features of the present disclosure are apparent from the dependent claims, the description, and the accompanying drawings.

[0008] According to one embodiment or aspect, a deposition apparatus is provided. The deposition apparatus includes a vacuum chamber sized to accommodate a rectangular large area substrate of generation GEN 2 or higher, and an array of deposition sources having at least a first deposition source, a second deposition source, and a third deposition source having a target pitch in a first direction, the array of deposition sources being configured to deposit a material in a processing area in the vacuum chamber in a stationary deposition process, wherein a ratio of a deposition source pitch to a deposition source dimension in the first direction is 1.8 or above.

[0009] According to another embodiment or aspect, a deposition system is provided. The deposition system includes a first deposition apparatus configured to deposit a first layer of a layer stack, the first deposition apparatus having a first vacuum chamber sized to accommodate a rectangular large area substrate of generation GEN 2 or higher, a first number of deposition sources being provided in the first vacuum chamber, and a second deposition apparatus configured to deposit a second layer over the first layer of the layer stack, the second deposition apparatus having a second vacuum chamber sized to accommodate the substrate, a second number of deposition sources being provided in the second vacuum chamber, wherein the second number of deposition sources is at least 30% smaller as compared to the first number of deposition sources.

[0010] According to another embodiment or aspect, a method of depositing a layer stack on a rectangular large area substrate of generation GEN 2 or higher is provided. The method includes depositing a first layer having a first thickness with a first deposition apparatus having a first vacuum chamber, wherein the substrate is stationary, and depositing with a second deposition apparatus having a second vacuum chamber a second layer over the first layer, the second layer having a second thickness at least 10 times larger than the first thickness, wherein a second number of deposition sources in the second vacuum chamber is at least 30% smaller as compared to a first number of deposition sources in the first vacuum chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following: FIG. 1 shows the schematic view of a portion of the deposition apparatus that may be used in a deposition system according to embodiments of the present disclosure;

FIG. 2 shows a schematic view of a portion of a deposition apparatus according to embodiments described herein and having a reduced number of deposition sources;

FIG. 3 shows a further schematic view of a portion of a deposition apparatus, for example, a deposition apparatus as shown in FIG. 2;

FIG. 4 shows a flow chart illustrating methods of manufacturing layer stack according to embodiments of the present disclosure; and

FIG. 5 shows a schematic view of a deposition system according to embodiments described herein and having a first deposition apparatus with the first number of deposition sources and a second deposition apparatus with a different number of deposition sources.

DETAILED DESCRIPTION

[0012] Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, the same reference numbers refer to same components. Generally, only the differences with respect to individual embodiments are described. Each example is provided by way of explanation of the disclosure and is not meant as a limitation. Further, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the description includes such modifications and variations. [0013] FIG. 1 shows a schematic view of deposition apparatus 100. A substrate 120 is provided in a processing area. The substrate and the processing area, for example, a deposition area, are provided in front of an array 150 of deposition sources 152. A mask 130 can be provided between the substrate 120 and the array 150 of deposition sources. For example, the mask can be an edge exclusion mask covering an edge portion of the substrate 120. The edge portion covered by the edge exclusion mask is not deposited with material from the deposition sources, for example, target material of targets of the deposition sources.

[0014] According to some embodiments, which can be combined with other embodiments described herein, the deposition sources 152 of the array 150 of deposition sources may be provided on a curved line. FIG. 1 shows the distance 104, for example, the minimum distance, between the array 150 of deposition sources and the substrate 120 or the processing area, respectively. Further, the distance 155 between adjacent deposition sources 152, i.e. the pitch of the array 150 of deposition sources, is shown. As indicated by the distance 106, the array 150 of deposition sources extends beyond the edge of the substrate 120. The length of the array of deposition sources is larger as compared to the length of the substrate 120.

[0015] The number of deposition sources in an area of deposition sources is influenced by the size of the substrate, for example, the substrate generation of a large area substrate, by the deposition rate and/or by the layer uniformity. The distance 155 between adjacent deposition sources may result in non-uniformity, a ripple, for example, a sinusoidal layer thickness profile.

[0016] For thin layers to be deposited, such as seed layers or adhesion layers, which may for example promote deposition of a subsequent layer, the deposition rate may be well above a deposition rate to meet a tact time. The deposition of a thin layer may be provided in a very short time. Yet, for a substrate processing system having a given tact time this may result in waiting times of a substrate in the substrate processing system. Further, the number of deposition sources influences the material cost of system (MCOS) and/or the cost of ownership (CoO). Accordingly, there it is beneficial to reduce the number of deposition sources. Yet, in light of the above described ripple, i.e. a layer non-uniformity, which is influenced by the decision sources (see distance 155), a reduction of the number of deposition sources is not a simple task. [0017] According to embodiments of the present disclosure, a deposition apparatus is provided. The deposition apparatus includes a vacuum chamber sized to accommodate a rectangular large area substrate of generation GEN 2 or higher, such as GEN 5 or higher. An array of deposition sources having at least a first deposition source, a second deposition source, and a third deposition source is provided. The array has a target pitch in a first direction. The array of deposition sources is configured to deposit a material in a processing area in the vacuum chamber in a stationary deposition process, wherein a ratio of a deposition source pitch to a deposition source dimension in the first direction is 2.9 or above.

[0018] According to embodiments of the present disclosure, it is possible to reduce the number of deposition sources of an array, for example, by increasing the pitch while providing a predetermined layer uniformity i.e. a predetermined layer-ripple uniformity. The predetermined uniformity can be a uniformity meeting a specification or being below a specification for a manufacturing process. As described with respect to FIGS. 2 and 3 in more detail below, further dimensions are adapted to compensate the reduced number of deposition sources.

[0019] According to embodiments, which can be combined with other embodiments described herein, a deposition source may be configured for vacuum deposition. A deposition apparatus may be a vacuum deposition apparatus. A deposition source may be arranged in a vacuum processing chamber. According to embodiments, which can be combined with other embodiments described herein, a deposition source may be or include a cathode assembly, e.g. a sputter source. A deposition source may include a target, particularly a rotatable target. A rotatable target may be rotatable around a rotation axis of the deposition source, e.g. a rotation axis. A rotatable target may have a curved surface, for example a cylindrical surface. The rotatable target may be rotated around the rotation axis being the axis of a cylinder or a tube during sputtering. This may increase material utilization.

[0020] A deposition source may include a magnet assembly. A magnet assembly may be arranged in a rotatable target of the deposition source. A magnet assembly may be arranged so that the target material sputtered by the deposition source is sputtered towards a substrate. A magnet assembly may generate a magnetic field. The magnetic field may cause one or more plasma regions to be formed near the magnetic field during a sputter deposition process. The position of the magnet assembly within a rotatable target affects the direction in which target material is sputtered away from the cathode assembly during a sputter deposition process.

[0021] The plurality of options may be provided to increase the layer uniformity utilizing the magnet assembly in a sputter source. For example, the magnet assemblies or magnetrons may be rotated in a wobbling manner or may be set to various sputtering positions. Yet, these attempts may not be sufficient for a reduced number of deposition sources. Further changes to deposition apparatus are beneficial to further improve layer uniformity, particularly for large area substrates, such as substrates for display manufacturing.

[0022] The term“substrate” as used herein embraces both inflexible substrates, e.g., a glass substrate, a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate, and flexible substrates, such as a web or a foil. According to some embodiments, which can be combined with other embodiments described herein, embodiments described herein can be utilized for Display PVD, i.e. sputter deposition on large area substrates for the display market. According to some embodiments, large area substrates or respective carriers, wherein the carriers may carry one substrate or a plurality of substrates, may have a size of at least 0.67 m². The size may be from about 0.67m2 (0.73x0.92m - Gen 4.5) to about 8 m², more specifically from about 2 m² to about 9 m² or even up to 12 m². The substrates or carriers, for which the structures, apparatuses, such as cathode assemblies, and methods according to embodiments described herein are provided, can be large area substrates as described herein. For instance, a large area substrate or carrier can be GEN 4.5, which corresponds to about 0.67 m² substrates (0.73x0.92m), GEN 5, which corresponds to about 1.4 m² substrates (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m² substrates (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7m² substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m² substrates (2.94 m x 3.37 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.

[0023] FIG. 2 shows deposition apparatus 200. A substrate 120 and optionally a mask 130 are provided similar to FIG. 1. The array 250 of deposition sources 252 has a reduced number as compared to FIG. 1. Accordingly, the distance 255 between neighboring deposition sources is increased, i.e. the pitch of the array is increased. [0024] According to embodiments described herein, the ratio of the substrate dimension along the first direction and the number of deposition sources is 280 mm or larger. For example, considering a GEN 10 substrate, for example, for display manufacturing, as described above, the number of deposition sources can be reduced from 16 deposition sources to 12 or less deposition sources, for example, 8 deposition sources. For example, the deposition sources may be rotatable sputter cathodes. Similarly, for a GEN 8.5 substrate, the number of deposition sources can be reduced from 12 deposition sources to 8 or less deposition sources, for example, 6 deposition sources. FIG. 1, 2 and 3, show the deposition apparatus interrupted at the center. That is, the number of deposition sources may be larger as shown in the figures and may, for example, be derived by the above described ratio. For example, the number of deposition sources may be reduced by at least 30%, for example 50%, in a deposition apparatus for thin layer deposition (see FIG. 2) as compared to deposition apparatuses for thick layer deposition (see FIG. 1). Reduced by at least 30% is to be understood that 70% or less of the sources are provided.

[0025] As shown in FIG. 2, the distance between the substrate 120 or the processing area, respectively, and the array 250 of deposition sources 252 is increased. The area of deposition sources includes a first deposition source at a first side of the array, for example, the deposition source on the left hand side in FIG. 2, one or more second deposition sources in the middle and/or adjacent to the center of the array, and a third deposition source at a second, opposing side of the array, for example the deposition source on the right hand side in FIG. 2. The distance 204 between the processing area and the first deposition source and/or the third deposition source is smaller as compared to the distance 205 between the processing area and the second deposition source. According to embodiments of the present disclosure, a ratio of a first distance 205 between the deposition area and the second deposition source and of the deposition source dimension in the first direction is 1.7 or above, the second deposition source being adjacent to a center of the array of deposition sources or between at least two further deposition sources. Additionally or alternatively, a ratio of a second distance 204 between the deposition area and the first deposition source and of the deposition source dimension in the first direction is 1.3 or above, the first target being at a side of the array of deposition sources. [0026] According to yet further implementations, which can be combined with other embodiments described herein, the distance 206, i.e. the dimension at which the array 250 of deposition sources 252 extends beyond an edge of the substrate 120 is increased. The overlap of the array in the first direction, i.e. the direction of the pitch of the array, is reduced. For example, according to some embodiments, which can be combined with other embodiments described herein, the ratio of the overlap (in the horizontal direction) and the dimension of the deposition source (in the horizontal direction), for example, the diameter of the rotatable sputter source, can be 0.4 or below. For example, the dimension in the horizontal direction may also be a linear extension of a planar target in horizontal direction.

[0027] FIG. 2 shows, for example, a top view of a deposition apparatus and an array of deposition sources, respectively. The deposition apparatus or a deposition system may be utilized for vertical substrate orientation. Vertical substrate orientation may be particularly beneficial for large area substrates of high generations as the footprint of the apparatus may be reduced. According to embodiments of the present disclosure, a vertical substrate orientation may allow for a deviation of the substrate orientation parallel to direction gravity by, for example, 15° or less, for example 10° or less. A small deviation from being parallel to the direction of gravity can provide for an improved stability of a supported substrate, for example, for a substrate surface to be processed moving upwards. A small deviation from being parallel to the direction of gravity in the opposite angular direction can provide for a reduced particle adherence on the substrate surface to be processed.

[0028] FIG. 3 shows deposition apparatus 200 in a side view, for example, the deposition apparatus shown in FIG. 2. Considering a vertically oriented substrate, the dimension of the substrate corresponding to the height of the substrate is shown as dimension 305 in FIG. 3. According to some embodiments, which can be combined with other embodiments described herein, large area substrates may be processed in a landscape orientation. This may be beneficial to improve stability of the substrate when supported in the deposition apparatus. The length of the substrate, for example, in the horizontal direction, is shown as dimension 307 in FIG. 3. Accordingly, the area of the large area substrate is the product of dimension 305 and dimension 307. [0029] As shown in FIG. 3, deposition sources can be provided as line sources, such as, for example, rotatable sputter sources. The deposition sources have length direction, for example, the vertical direction in FIG. 3. The length of the deposition source exceeds the height of the substrate by dimension 304. According to embodiments of the present disclosure, the height of the deposition sources can be increased for a deposition apparatus according to embodiments described herein, for example a deposition apparatus with a reduced number of deposition sources. Accordingly, dimension 304 is increased. According to some embodiments, which can be combined with other embodiments described herein, a first deposition source extends in a length direction perpendicular to the first direction (the direction of the pitch, i.e. the horizontal direction in FIG. 3), and the deposition source is at least 700 mm longer in the length direction as compared to the substrate in the height direction of the deposition source. According to some embodiments, which can be combined with other embodiments described herein, the ratio of the dimension at which the deposition source extends in the length direction (at one side) over the substrate in height direction is 0.1 or above. The dimension of the extension of a deposition source, i.e. a target, in substrate height direction may also be referred to as target overlap.

[0030] By changing at least one of the distance of the deposition source, for example, a target, and the substrate or the deposition area, respectively, the overlap of the array of deposition sources in horizontal direction and the overlap of the array of deposition sources in vertical direction, a good uniformity, particularly with respect to the ripple of a layer thickness on the substrate, can be provided with a reduced number of deposition sources. Accordingly, structural changes to existing deposition apparatuses are minimal. For example, no additional process position for the deposition with the reduced number of deposition sources is needed. Further, no additional movement of the substrate relative to the deposition source is needed to achieve predetermined uniformities.

[0031] According to some embodiments, a thin layer, for example, for adhesion promotion of a copper layer, can be provided by titanium. As described below with respect to FIG. 5, a thin layer of titanium can be deposited and subsequently, thicker layers of copper can be deposited. Due to the reduced number of deposition sources, for example, rotatable sputter sources, a difference between the deposition times of the two layers is reduced. For example, tact time can be about 1 minute or below. A ripple uniformity of the thin layer, for example, the titanium layer, can be 10% or below, while having a reduced number of deposition sources. For example, a target- substrate distance of a first deposition source and a side of the array of deposition sources can be increased to be about 220 mm or above and/or the target- substrate distance of a second deposition source being adjacent to a center of the array of deposition sources can be increased to be about 280 mm or above.

[0032] According to embodiments of the present disclosure, the design of the array of deposition source, e.g. the design of the array of targets is modified to allow for a reduced number of targets or deposition sources, respectively. The ripple can be maintained within predetermined specifications. Further aspects of improving the ripple uniformity of a deposited layer can be a movement of a magnetron in a sputter source. For rotatable sputter sources, the movement can be a movement by an angle. For planar sputter sources, the movement can be a translation. For example, the movement can be a sweeping and/or wobble movement, wherein a magnetron is moved back and forth. For example, according to some embodiments, a movement can be by an angle within a range of +- 40°.

[0033] FIG. 4 shows a flow chart illustrating an exemplary embodiment of methods according to the present disclosure. A method of depositing a layer stack on a rectangular large area substrate of generation GEN 2 or higher, such as GEN 5 or higher, includes depositing a first layer having a first thickness with a first deposition apparatus having a first vacuum chamber, wherein the substrate is stationary (see box 402). The substrate may be moved from the first deposition apparatus, e.g. a first vacuum chamber, to a second position apparatus, e.g. a second vacuum chamber (see box 404). In the second vacuum chamber a second layer is deposited over the first layer, the second layer having a second thickness at least 10 times larger than the first thickness. A second number of deposition sources in the second vacuum chamber is at least 30% smaller as compared to a first number of deposition sources in the first vacuum chamber (see box 406).

[0034] According to yet further embodiments, a method of manufacturing a thin layer, for example a layer having a thickness, e.g. an average thickness, of 200 nm or below may be provided. For example, the thin layer can be an adhesion promotion layer, a seed layer, or another layer assisting a generation of subsequent layers. The method may include the use of deposition apparatus according to embodiments described herein. For example, the deposition apparatus may include a vacuum chamber sized to accommodate a rectangular large area substrate of generation GEN 2 or higher, such as GEN 5 or higher, and an array of deposition sources having at least a first deposition source, a second deposition source, and a third deposition source having a target pitch in a first direction, the array of deposition sources being configured to deposit a material in a processing area in the vacuum chamber in a stationary deposition process, wherein a ratio of a deposition source pitch to a deposition source dimension in the first direction is 2.9 or above. According to yet another example, which may additionally or alternatively be provided, the deposition apparatus may include a vacuum chamber sized to accommodate a rectangular large area substrate and an array of deposition sources having at least a first deposition source, a second deposition source, and a third deposition source having a target pitch in a first direction, wherein a ratio of the substrate dimension along the first direction and the number of deposition sources is 280 mm or larger. According to yet another example, which may additionally or alternatively be provided, the deposition apparatus may include a vacuum chamber sized to accommodate a rectangular large area substrate and an array of deposition sources having at least a first deposition source, a second deposition source, and a third deposition source having a target pitch in a first direction, wherein a ratio of a first distance between the deposition area and the second deposition source and of the deposition source dimension in the first direction is 1.7 or above, the second deposition source being adjacent to a center of the array of deposition sources.

[0035] According to yet further embodiments, which can be combined with other embodiments described herein, considering a target overlap TO in substrate height direction, a target pitch TP, a target-substrate-distance at the array side TSDs, and a target- substrate- distance at the array center TSDc, the following details features and aspects of a target array may be provided. A ratio TO/TSDc may be about 1.0 to 1.3, such as about 1.1. Additionally or alternatively, a ratio TO/TSDs may be about 1.2 to 1.8. Additionally or alternatively, a ratio TO/TSDs may be about 1.2 to 1.8. Additionally or alternatively, a ratio TP/TSDc may be about 1.2 or above and/or 1.6 or below. [0036] According to various implementations that may be combined independently or in combination with embodiments of the present disclosure a method may provide a ripple uniformity of the first layer or the thin layer, respectively, of 10% or below. A ratio of a substrate dimension along a first direction being a direction of a pitch of a deposition source array and the number of deposition sources is 280 mm or larger.

[0037] FIG. 5 shows deposition system 500. The deposition system 500 includes a loading module 502, a transfer chamber 524, a first deposition apparatus 526, and a second deposition apparatus 528. The loading module 502 can be a swing module moving a substrate, for example a substrate supported by a substrate carrier, at an angle. For example, for loading the substrate, the substrate orientation can be varied from a horizontal substrate orientation to a vertical substrate orientation, i.e. an essentially vertical substrate orientation as described above. According to embodiments, for loading the substrate, the substrate can be moved by an angle of at least 70°. The substrate can be moved from a non-vertical orientation to a non horizontal orientation. According to some embodiments, the loading module can be operated under atmospheric conditions. The loading module may also unload substrates after processing of the substrates.

[0038] From the loading module, the substrate can be transferred to the transfer chamber 524. For example, the transfer chamber can be a load lock chamber. The substrate can be loaded in the load lock chamber under atmospheric pressure, thereafter the load lock chamber is evacuated, and the substrate is transferred from the transfer chamber load lock chamber to subsequent vacuum chambers. According to some embodiments, further transfer chambers can be provided between the transfer chamber 524 and deposition apparatus, for example, deposition apparatus 526.

[0039] The deposition apparatus 526 can be configured to provide a first layer of the layer stack on a substrate. The substrate may be moved from the transfer chamber 524 to the deposition apparatus 526 on a first transportation track 514. After the substrate has been transferred into the vacuum chamber of the deposition apparatus 526, the substrate is stationary or essentially stationary in the deposition apparatus 526, for example, while the array 250 of deposition sources 252 deposit the first layer on the substrate. As described above, the first layer can be a thin layer. The thickness of the first layer can be 200 nm or below. For depositing a thin layer, the reduced number of deposition sources 252 can be provided. The geometry of the array 250 deposition sources 252 and/or the distance of the array from the substrate during deposition is adapted according to embodiments of the present disclosure to allow for deposition with the reduced number of deposition sources.

[0040] After deposition of the first layer on the substrate, the substrate can be moved to the second deposition apparatus 528. The substrate can be moved on the first transportation track 514. In the second deposition apparatus 528, an array 150 of deposition sources 152 deposits the thick layer over the first layer. The number of deposition sources 152 in the second deposition apparatus is higher as compared to the number of deposition sources 252 in the first deposition apparatus 526. After deposition of the second layer, the substrate may be moved to a second transportation track 512. The second transportation track 512 can be utilized to move the substrate, for example, a substrate supported by substrate carrier, from the second deposition apparatus 528 through the first deposition apparatus 526, into the transfer chamber 524.

[0041] According to embodiments of the present disclosure, a deposition system is provided. The deposition system includes a first deposition apparatus configured to deposit a first layer of a layer stack, the first deposition apparatus having a first vacuum chamber sized to accommodate a rectangular large area substrate of generation GEN 6 or higher, a first number of deposition sources being provided in the first vacuum chamber and a second deposition apparatus configured to deposit a second layer over the first layer of the layer stack, the second deposition apparatus having a second vacuum chamber sized to accommodate the substrate, a second number of deposition sources being provided in the second vacuum chamber, wherein the second number of deposition sources is at least 30% smaller as compared to the first number of deposition sources.

[0042] According to some embodiments, which can be combined with other embodiments described herein, a first deposition apparatus is configured to deposit a first material and a second depositions apparatus is configured to deposit a second material different from the first material. One or more deposition apparatuses in a deposition system, particularly a vacuum deposition system, can be provided according to embodiments described herein. [0043] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

1. A deposition apparatus, comprising: a vacuum chamber sized to accommodate a rectangular large area substrate of generation GEN 2 or higher; and an array of deposition sources having at least a first deposition source, a second deposition source, and a third deposition source having a target pitch in a first direction, the array of deposition sources being configured to deposit a material in a processing area in the vacuum chamber in a stationary deposition process, wherein a ratio of a deposition source pitch to a deposition source dimension in the first direction is 1.8 or above.

2. The deposition apparatus according to claim 1, wherein the ratio of the substrate dimension along the first direction and the number of deposition sources is 280 mm or larger.

3. The deposition apparatus according to any of claims 1 to 2, wherein a ratio of a first distance between the deposition area and the second deposition source and of the deposition source dimension in the first direction is 1.7 or above, the second deposition source being adjacent to a center of the array of deposition sources.

4. The deposition apparatus according to any of claims 1 to 3, wherein a ratio of a second distance between the deposition area and the first deposition source and of the deposition source dimension in the first direction is 1.3 or above, the first target being at a side of the array of deposition sources.

5. The deposition apparatus according to any of claims 1 to 4, wherein the first deposition source extends in a length direction perpendicular to the first direction, and wherein the first deposition source is at least 700 mm longer in the length direction as compared to the substrate in the height direction of the deposition source or wherein the ratio of the dimension at which the deposition source extends in the length direction over the substrate in height direction is 0.1 or above.

6. The deposition apparatus according to any of claims 1 to 5, wherein the second deposition source is a rotatable sputter source.

7. A deposition system, comprising: a first deposition apparatus configured to deposit a first layer of a layer stack, the first deposition apparatus having a first vacuum chamber sized to accommodate a rectangular large area substrate of generation GEN 2 or higher, a first number of deposition sources being provided in the first vacuum chamber; and a second deposition apparatus configured to deposit a second layer over the first layer of the layer stack, the second deposition apparatus having a second vacuum chamber sized to accommodate the substrate, a second number of deposition sources being provided in the second vacuum chamber, wherein the second number of deposition sources is at least 30% smaller as compared to the first number of deposition sources.

8. The deposition system according to claim 7, wherein the first deposition apparatus is configured to deposit a first material and the second deposition apparatus is configured to deposit a second materials different from the first material.

9. The deposition apparatus according to any of claims 7 to 8, wherein the first deposition apparatus is a deposition apparatus according to any of claims 1 to 5

10. A method of depositing a layer stack on a rectangular large area substrate of generation GEN 2 or higher, comprising: depositing a first layer having a first thickness with a first deposition apparatus having a first vacuum chamber, wherein the substrate is stationary; and depositing with a second deposition apparatus having a second vacuum chamber a second layer over the first layer, the second layer having a second thickness at least 10 times larger than the first thickness, wherein a second number of deposition sources in the second vacuum chamber is at least 30% smaller as compared to a first number of deposition sources in the first vacuum chamber.

11. The method of claim 10, wherein the ripple uniformity of the first layer is 10% or below and/or wherein the average thickness of the first layer is 200 nm or below.

12. The method according to any of claims 10 to 11, wherein the ratio of a substrate dimension along a first direction being a direction of a pitch of a deposition source array and the number of deposition sources is 280 mm or larger.

13. The method of any of claims 10 to 12, wherein the first deposition apparatus comprises: a vacuum chamber sized to accommodate a rectangular large area substrate of generation GEN 2 or higher; and an array of deposition sources having at least a first deposition source, a second deposition source, and a third deposition source having a target pitch in a first direction, the array of deposition sources being configured to deposit a material in a processing area in the vacuum chamber in a stationary deposition process, wherein a ratio of a deposition source pitch to a deposition source dimension in the first direction is 1.8 or above.

14. The method according to claim 13, wherein a ratio of a first distance between the deposition area and the second deposition source and the deposition source dimension in the first direction is 1.7 or above, the second deposition source being adjacent to a center of the array of deposition sources.

15. The method according to any of claims 13 to 14, wherein a ratio of a second distance between the deposition area and the first deposition source and the deposition source dimension in the first direction is 1.3 or above, the first target being at a side of the array of deposition sources.