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WO2020062474A1 - 显示面板及显示终端 - Google Patents

显示面板及显示终端 Download PDF

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Publication number
WO2020062474A1
WO2020062474A1 PCT/CN2018/115293 CN2018115293W WO2020062474A1 WO 2020062474 A1 WO2020062474 A1 WO 2020062474A1 CN 2018115293 W CN2018115293 W CN 2018115293W WO 2020062474 A1 WO2020062474 A1 WO 2020062474A1
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WO
WIPO (PCT)
Prior art keywords
substrate
layer
display panel
support
display area
Prior art date
Application number
PCT/CN2018/115293
Other languages
English (en)
French (fr)
Inventor
宋振莉
Original Assignee
重庆惠科金渝光电科技有限公司
惠科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 重庆惠科金渝光电科技有限公司, 惠科股份有限公司 filed Critical 重庆惠科金渝光电科技有限公司
Priority to US17/044,211 priority Critical patent/US11237434B2/en
Publication of WO2020062474A1 publication Critical patent/WO2020062474A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • the present application relates to the technical field of display panels, and in particular, to a display panel and a display terminal.
  • the display panel is generally formed by two upper and lower substrates, namely an array substrate (array substrate) and a CF plate (color filter substrate), on the box.
  • the upper and lower substrates are adhered to each other with a frame adhesive to prevent liquid crystal overflow and moisture intrusion , And maintain the thickness of the peripheral box of the LCD cell.
  • the thickness uniformity of the peripheral box of the conventional display panel is poor, which affects the display effect of the panel.
  • a display panel and a display terminal are provided.
  • a display panel includes a display area and a non-display area surrounding the display area; the display panel includes:
  • the second substrate is disposed at a distance from the first substrate
  • a frame adhesive disposed between the first substrate and the second substrate and located in the non-display area
  • a multifunctional layer is disposed on the first substrate and is located in the non-display area; the multifunctional layer includes a support portion; the support portion is embedded in the frame adhesive and is in surface contact with the second substrate
  • the multifunctional layer is a light blocking layer.
  • the multifunctional layer includes a support layer and a conductive layer; the support layer is formed on the first substrate; the support layer includes the support portion; and the support layer is provided with a first A via; the first via is located above a common electrode of the first substrate;
  • the conductive layer is formed on the support layer; a region of the conductive layer on the support portion is electrically connected to the second substrate; the conductive layer is further connected to the first substrate through the first via hole. A substrate is electrically connected.
  • a pore diameter of the first via hole is 5 ⁇ m to 30 ⁇ m.
  • the first substrate includes:
  • a first passivation layer formed on the thin film transistor layer and away from the substrate.
  • the conductive layer is connected to a common electrode of the first substrate through the first via hole; the pixel electrode and the common electrode have the same thickness.
  • the first substrate further includes a support formed on the gate of the thin film transistor layer; the support and the support have the same structure and are prepared in the same process. ; The support and the support layer are each formed of a light-shielding material.
  • the support and the support layer are both black matrices.
  • the first passivation layer is a PV insulating material.
  • the conductive layer and the pixel electrode are both indium tin oxide.
  • a total area of the support portion in contact with the second substrate is 1% to 5% of an area of the non-display area.
  • the supporting portion includes a first supporting portion and a second supporting portion; the first supporting portion is formed in a first region; the first region is located above a common electrode of the first substrate; The second support portion is located in a second region of the first substrate.
  • the support portions are regularly arranged in the non-display area.
  • the shape of the cross section of the support portion is a symmetrical figure.
  • a shape of a cross section of the supporting portion is circular, oval, or rectangular.
  • the display panel further includes a liquid crystal layer; the liquid crystal layer is formed between the first substrate and the second substrate.
  • the display panel is a liquid crystal display panel, an organic light emitting diode display panel, or a quantum dot light emitting diode display panel.
  • a display panel includes a display area and a non-display area surrounding the display area; the display panel includes:
  • the second substrate is disposed at a distance from the first substrate
  • a liquid crystal layer disposed between the first substrate and the second substrate;
  • a sealant disposed between the first substrate and the second substrate and located in the non-display area; the sealant surrounding the liquid crystal layer;
  • a multifunctional layer is disposed on the first substrate and is located in the non-display area; the multifunctional layer includes a support portion; the support portion is embedded in the frame adhesive and is in surface contact with the second substrate To achieve electrical connection between the first substrate and the second substrate;
  • the multifunctional layer includes a supporting layer and a conductive layer; the supporting layer is formed on the first substrate; the supporting layer includes the supporting portion; the supporting layer is provided with a first via hole; the first Vias are located above the common electrode of the first substrate; the conductive layer is formed on the support layer; a region of the conductive layer on the support portion is electrically connected to the second substrate; the conductive The layer is also electrically connected to the first substrate through the first via;
  • the support layer is a light-shielding layer; a total area of the support portion in contact with the second substrate is 1% to 5% of an area of the non-display area.
  • the first substrate includes:
  • a first passivation layer formed on the thin film transistor layer and away from the substrate.
  • the conductive layer is connected to a common electrode of the first substrate through the first via; the pixel electrode and the common electrode have the same thickness;
  • the first substrate further includes a support formed on the gate of the thin film transistor layer; the support and the support have the same structure and are prepared in the same process; the support and the Each of the supporting layers is formed of a light-shielding material.
  • a display terminal includes a terminal body and a display panel; the display panel is disposed on the terminal body; the display panel includes a display area and a non-display area surrounding the display area; and the display panel includes:
  • the second substrate is disposed at a distance from the first substrate
  • a frame adhesive disposed between the first substrate and the second substrate and located in the non-display area
  • a multifunctional layer is disposed on the first substrate and is located in the non-display area; the multifunctional layer includes a support portion; the support portion is embedded in the frame adhesive and is in surface contact with the second substrate
  • the multifunctional layer is a light blocking layer.
  • 1 is a schematic structural diagram of a conventional display panel
  • FIG. 2 is a top view of a display panel in an embodiment
  • FIG. 3 is a schematic structural diagram of a display panel of the embodiment shown in FIG. 2.
  • Liquid crystal display (Liquid Crystal Display, LCD) has many advantages such as thin body, power saving, no radiation, etc., and has been widely used.
  • display panels are increasingly used in display terminals such as mobile phones, personal digital assistants (PADs), digital cameras, computer screens, or laptop screens.
  • a conventional display panel is generally formed by a pair of boxes, namely a first substrate (Array) 110 and a second substrate (CF substrate) 120, as shown in FIG. 1.
  • the upper and lower substrates on the back of the cell are bonded with the frame adhesive 130 to prevent liquid crystal overflow and water vapor intrusion, and maintain the thickness of the peripheral cell of the liquid crystal cell.
  • a certain proportion of silicon balls 140 and gold balls 150 are generally mixed in the area of the peripheral frame sealant 130.
  • the silicon ball 140 plays a role of supporting the thickness of the peripheral box in the peripheral structure of the panel, and the gold ball 150 is used to conduct the upper and lower substrates.
  • the spherical silicon balls 140 and gold balls 150 are independent of the TFT first substrate 110 and the second substrate 120, and are doped in a frame adhesive for bonding the first substrate 110 and the second substrate 120.
  • the contact area with the upper and lower substrates is very small and extremely unstable, and it is difficult to control the thickness of the peripheral box, resulting in uneven thickness of the periphery of the display panel, thereby affecting the display effect of the panel.
  • the display panel may be an LCD display panel (Liquid Crystal Display), an OLED (Organic Light-Emitting Diode) display panel, a QLED (Quantum Dot Light Emitting Diode) display panel, and the like.
  • the display panel 10 may be a flat display panel or a curved display panel. It can be understood that the type of the display panel 10 includes, but is not limited to, the above examples.
  • the display panel 10 is an LCD display panel, it may be an LCD display such as VA (Vertical Alignment Liquid Crystal), TN (Twisted Nematic, Twisted Nematic), or IPS (In-Plane Switching). panel.
  • VA Vertical Alignment Liquid Crystal
  • TN Transmission Nematic
  • Twisted Nematic Twisted Nematic
  • IPS In-Plane Switching
  • a display panel includes a display area 20 and a non-display area 22, as shown in FIG. 2.
  • the non-display area 22 surrounds the display area 20.
  • the non-display area 22 is used as a frame area for displaying circuits and components such as a camera and a logo without performing display.
  • the non-display area 22 may be around the display area 20, or may be disposed on only one side or three sides of the display area 20, so as to realize people's demand for full-screen display.
  • FIG. 3 is a schematic structural diagram of a display panel shown in FIG. 2.
  • the display panel includes a first substrate 210, a second substrate 220, a liquid crystal layer 230, a sealant 240, and a multifunctional layer 250.
  • the second substrate 220 and the first substrate 210 are relatively spaced apart from each other, and may generally be referred to as upper and lower substrates, that is, the first substrate 210 is a lower substrate and the second substrate 220 is an upper substrate.
  • the liquid crystal layer 230 is disposed between the first substrate 210 and the second substrate 220.
  • the frame adhesive 240 is disposed between the first substrate 210 and the second substrate 220 and is located in the non-display area 22.
  • the frame glue 240 surrounds the liquid crystal layer 230.
  • the frame adhesive 240 is used to realize the bonding between the first substrate 210 and the second substrate 220, prevent liquid crystal overflow and water vapor intrusion in the liquid crystal layer 230, and maintain a thickness around the display panel.
  • the multifunctional layer 250 is disposed on the first substrate 210 and is located in the non-display area 22.
  • the multifunctional layer 250 includes a support portion 252.
  • the support portion 252 is embedded in the frame adhesive 240 and is in surface contact with the second substrate 220, so as to finally realize the electrical connection between the first substrate 210 and the second substrate 220.
  • the electrical connection between the first substrate 210 and the second substrate 220 in this case means that the common electrode 212 of the first substrate 210 and the common electrode 226 of the second substrate 220 are connected.
  • the multifunctional layer 250 is a light-blocking layer, that is, it includes at least one layer of light-shielding material.
  • a multifunctional layer 250 is formed on the first substrate 210.
  • the multifunctional layer 250 is located in the non-display area 22.
  • the multifunctional layer 250 includes a supporting portion 252.
  • the supporting portion 252 is embedded in the frame adhesive 240 and is in surface contact with the second substrate 220 to realize the electrical connection between the first substrate 210 and the second substrate 220. Because the support portion 252 and the multifunctional layer 250 are an integrated structure, and the multifunctional layer 250 is directly formed on the first substrate 210, that is, the support portion 252 is not opposed to the first substrate 210 and the second substrate 220 like a traditional gold ball. It is independent, so its stability is affected by the first substrate 210 and the second substrate 220, and the stability is better.
  • the multifunctional layer 250 is formed on the first substrate 210, the support portion 252 is in surface contact with the first substrate 220, has a large contact area, has good stability, and easily realizes the For the box, it is easy to control the thickness of the periphery of the display panel, which does not cause the problem of uneven thickness of the periphery of the display panel, so as not to affect the display effect of the panel.
  • the multifunctional layer 250 is a light-blocking layer, so there is no need to provide a light-shielding layer for the non-display area, which is beneficial to the lightness and thinness of the display panel.
  • the first substrate 210 includes a substrate 202, a thin film transistor layer, a first passivation layer 204, and a pixel electrode 218.
  • a first passivation layer 204 is formed on the thin film transistor layer.
  • the first passivation layer 204 is used as a protection layer to protect the thin film transistor layer, so as to convert the metal surface in the thin film transistor layer into a state that is not easily oxidized, and delay the corrosion rate of the metal.
  • the thin film transistor layer includes a gate 206, a gate insulating layer 208, a semiconductor layer (not shown), a source / drain (not shown), and a common electrode 212.
  • the gate 206 is formed on the substrate 202.
  • the common electrode 212 is also formed on the substrate 202.
  • the gate 206 and the common electrode 212 can be prepared in the same preparation process, that is, the materials of the gate 206 and the common electrode 212 are the same, and both are conductive materials, such as metal.
  • the gate insulating layer 208 is formed on the substrate 202 and covers a part of the gate electrode 206 and the common electrode 212, and a part of the common electrode 212 is exposed to facilitate the electrical connection of the common electrode 212 with other components.
  • the semiconductor layer is formed on a side of the gate insulating layer 208 away from the gate layer 206.
  • the source and drain are formed on the gate insulating layer 208 and are connected to both ends of the semiconductor layer, respectively.
  • the thin film transistor layer further includes a plurality of data lines (not shown).
  • the data line is one of conductive traces, which is formed on the same horizontal plane as the source and drain.
  • the data line is connected to the source to output an external data signal to the source of the corresponding thin film transistor.
  • the thin film transistor layer 210 is further provided with scan lines and power lines. The scan line is connected to the gate 206 of the thin film transistor layer.
  • the data lines are connected to the source and drain, so the scan lines are made in the same process as the gate and on the same horizontal plane; the data lines and source and drain are made in the same process and on the same horizontal plane.
  • the scanning lines and data lines intersect to form an array of pixel regions.
  • the substrate 202 may be made of materials known in the art, such as glass or plastic.
  • the material of the gate 206 may be one or more of metal conductive materials such as aluminum and copper. In other embodiments, the gate 206 may also use other conductive materials.
  • the material of the gate insulating layer 208 may be silicon nitride or silicon oxide.
  • the material of the gate insulating layer 208 may be a combination of silicon oxide and silicon nitride. It can be understood that the gate insulating layer 208 may also be made of other materials known to those skilled in the art.
  • the semiconductor layer includes an amorphous silicon layer and an N + -type doped amorphous silicon layer (not shown).
  • Amorphous silicon layer and an N + -type doped amorphous silicon layer are sequentially stacked on the gate insulating layer 208.
  • Amorphous silicon also called amorphous silicon, is a form of elemental silicon. Amorphous silicon does not have a complete diamond cell, and its purity is not high, but its melting point, density, and hardness are significantly lower than crystalline silicon.
  • An amorphous silicon layer (a-Si layer) is used as an active layer, and it can be formed by continuous deposition using Plasma Enhanced Chemical Vapor Deposition (PECVD).
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • An N + type doped amorphous silicon layer is formed over the amorphous silicon layer.
  • a plasma enhanced vapor chemical deposition method (Plasma Enhanced Chemical Deposition, PECVD) is used for continuous deposition to form an N + -type doped amorphous silicon layer.
  • the source and drain are prepared by the same metal layer.
  • the source and drain electrodes can be made of conductive materials such as aluminum, copper, and molybdenum.
  • the first passivation layer 204 is used as a protection layer to protect the thin film transistor layer, so as to convert the metal surface in the thin film transistor layer into a state that is not easily oxidized, and delay the corrosion rate of the metal.
  • the first passivation layer 204 may be a PV insulating material.
  • the pixel electrode 218 is formed on the first passivation layer 204.
  • the thin film transistor layer 110 may adopt a thin film transistor layer structure commonly used in the art, and those skilled in the art know that the pixel electrode 218 is connected to the drain in the thin film transistor layer 110.
  • the multifunctional layer 250 includes a support layer 250a and a conductive layer 250b.
  • the support layer 250 a is formed above the first passivation layer 204 in the first substrate 210 and is located in the non-display area 22.
  • the support layer 250 a includes a support portion 252.
  • a first via hole 254 is formed in the support layer 250a.
  • the first via hole 254 is located above the common electrode 212 of the first substrate 210.
  • a conductive layer 250b is formed on the support layer 250a.
  • the conductive layer 250 b is electrically connected to the common electrode 212 in the first substrate 210 through the first via hole 254.
  • a region of the conductive layer 250 a located on the support portion 252 is connected to the second substrate 220, so as to achieve electrical connection between the first substrate 210 and the second substrate 220.
  • the size of the first via 254 is generally defined according to the thickness of the layer to be bored, and is generally 5 ⁇ m to 30 ⁇ m.
  • the plurality of support portions 252 include a first support portion 252a and a second support portion 252b.
  • the first support portion 252a is formed in the first region.
  • the first region is located above the common electrode 212 of the first substrate 210.
  • the second support portion 252b is formed in the second region.
  • the second area may be an area other than the first area in the non-display area or the area covered by the sealant 240.
  • first via holes 254 are formed on both sides of the first support portion 252a.
  • the conductive layer 250b is electrically connected to the common electrode 212 of the first substrate 210 through the first via hole 254, and is connected to the second substrate 220 on the end surfaces of the first support portion 252a and the second support portion 251b that are close to the second substrate 220.
  • the end surfaces of each support portion 252 near the second substrate 220 are all located on the first plane.
  • the first plane is parallel to the surface of the second substrate 220, so as to ensure that the support portion 252 and the second substrate 220 are in surface contact instead of traditional point contact, which can play a better supporting role.
  • the total area of each support portion 252 in contact with the second substrate 220 is 1% to 5% of the area of the non-display area 22. At this time, the entire multifunctional layer 250 has a better supporting effect.
  • the support layer 250a covers the entire non-display area 22, and the support layer 250a is a light-shielding layer.
  • the support layer 250a may be a film layer formed of a black organic glue such as a black matrix.
  • the first substrate 210 further includes a support (not shown) formed on the gate of the thin film transistor layer.
  • the support and the support portion 252 have the same structure, that is, their sizes and shapes are the same.
  • the support and the support portion 252 can be prepared in the same process, which can save one process and help reduce the difficulty of product preparation.
  • the support provides a supporting effect, but does not provide an electrical connection effect like the supporting portion 252.
  • the material of the support and the support layer 250 a are both light-shielding materials, such as a black matrix, so as to form the light-shielding layer of the first substrate 210.
  • the light-shielding layer (BM layer) is not provided on the second substrate 220.
  • the second substrate 220 includes a substrate 222, a color filter layer 224 formed on the substrate 222, and a common electrode 226 formed on the color filter layer 224 and the substrate 222.
  • the color filter layer 224 may be a color block. The type of the color block can be determined according to the pixel design.
  • the color block includes a red color block, a blue color block And green color block.
  • R sub-pixel red sub-pixel
  • B sub-pixel blue sub-pixel
  • G sub-pixel green sub-pixel
  • the type of the color block will change accordingly, and it is not limited to a specific composition.
  • the multi-functional layer 250 also functions as a light-shielding layer while supporting and conducting connection, so that when the box of the first substrate 210 and the second substrate 220 is aligned, the peripheral thickness can be controlled more accurately.
  • the conductive layer 250b in the multifunctional layer 250, the pixel electrode 212 of the first substrate 210, and the common electrode 226 of the second substrate 220 are made of the same conductive material, such as ITO (indium tin oxide).
  • the conductive layer 250b and the pixel electrode 212 in the first substrate 210 are prepared in the same process step. That is, at this time, after the first passivation layer 204 is formed on the first substrate 210, the support layer 250a is prepared, and then a conductive material such as ITO is deposited on the entire surface of the first substrate 210 after the 250a is prepared Then, the pixel electrode 212 and the conductive layer 250b of the multifunctional layer 250 are respectively formed by etching or the like.
  • the conductive layer 250b makes an electrical connection between the common electrode 226 of the second substrate 220 and the common electrode 218 of the first substrate 210.
  • the structure of the supporting portion 252 can be set as required, as long as the supporting function is achieved and the second substrate 220 is in surface contact.
  • the shape of the cross section of the support portion 252 may be circular, oval, rectangular, or other shapes.
  • the cross section refers to a plane parallel to the surface of the second substrate 220.
  • the cross section of the supporting portion 252 is a symmetrical figure, and the supporting portions are regularly arranged in the non-display area 22 to better control the uniformity of the peripheral thickness.
  • the shape of the supporting portion 252 can satisfy the supporting effect and ensure the electrical connection between the conductive layer 250b and the first substrate 210 and the second substrate 220.
  • a side in contact with the second substrate 220 in the longitudinal section of the supporting portion 252 is referred to as an upper bottom, and a side in contact with the first substrate 210 is referred to as a lower bottom.
  • the width of the upper base can be 10 ⁇ m to 20 ⁇ m, and the width of the lower base can be 20 ⁇ m to 30 ⁇ m.
  • the width of the upper and lower soles need not be strictly limited, but can be adjusted according to the actual product size.
  • the thickness of the region where the supporting portion 252 is not formed is the same as that of the conventional light-shielding layer, which is 1 ⁇ m to 1.5 ⁇ m.
  • the supporting portion 252 may be a solid structure, so as to have a better supporting effect.
  • An embodiment of the present application further provides a display terminal.
  • the display terminal includes a terminal body, and further includes a display panel as described in any of the foregoing embodiments.
  • the display terminal may be, for example, a mobile phone, a personal digital assistant (PAD), a digital camera, a computer screen, or a laptop screen.
  • PDA personal digital assistant

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

一种显示面板，包括显示区和围绕显示区的非显示区；显示面板包括：第一基板；第二基板，与第一基板相对间隔设置；框胶(240)，设置于第一基板(210)和第二基板(220)之间且位于非显示区(22)；以及多功能层(250)，设置于第一基板(210)上且位于非显示区(22)；多功能层(250)包括支撑部(252)；支撑部(252)内嵌于框胶(240)中且与第二基板(220)面接触，以实现第一基板(210)和第二基板(220)的电连接。

Description

显示面板及显示终端 技术领域
本申请涉及显示面板技术领域，特别是涉及一种显示面板及显示终端。
背景技术
显示面板一般由上下两个基板即array基板(阵列基板)和CF板(Color Filter，色滤光基板)对盒形成，对盒后上下基板的四周用边框胶进行贴合防止液晶溢出和水汽侵入，并维持液晶盒周边盒厚。传统的显示面板的周边盒厚的均匀性较差，从而影响面板的显示效果。
发明内容
根据本申请的各种实施例，提供一种显示面板及显示终端。
一种显示面板，包括显示区和围绕所述显示区的非显示区；所述显示面板包括：
第一基板；
第二基板，与所述第一基板相对间隔设置；
框胶，设置于所述第一基板和所述第二基板之间且位于所述非显示区；以及
多功能层，设置于所述第一基板上且位于所述非显示区；所述多功能层包括支撑部；所述支撑部内嵌于所述框胶中且与所述第二基板面接触，所述多功能层为阻光层。
在其中一个实施例中，所述多功能层包括支撑层和导电层；所述支撑层形成于所述第一基板上；所述支撑层包括所述支撑部；所述支撑层开设有第一过孔；所述第一过孔位于所述第一基板的公共电极上方；
所述导电层形成于所述支撑层上；所述导电层中位于所述支撑部上的区域与所述第二基板电连接；所述导电层还通过所述第一过孔与所述第一基板 电连接。
在其中一个实施例中，所述第一过孔的孔径为5微米～30微米。
在其中一个实施例中，所述第一基板包括：
衬底；
薄膜晶体管层，形成在所述衬底上，包括公共电极；
第一钝化层，形成在所述薄膜晶体管层上且远离所述衬底；以及
像素电极，形成于所述第一钝化层上且位于所述显示区；
其中，所述导电层通过所述第一过孔与所述第一基板的公共电极连接；所述像素电极和所述公共电极的厚度相同。
在其中一个实施例中，所述第一基板还包括形成于所述薄膜晶体管层的栅极上的支撑物；所述支撑部和所述支撑物具有相同的结构且在同一道工序中制备得到；所述支撑物和所述支撑层均由遮光材料形成。
在其中一个实施例中，所述支撑物和所述支撑层均为黑矩阵。
在其中一个实施例中，所述第一钝化层为PV绝缘材料。
在其中一个实施例中，所述导电层和所述像素电极均为氧化铟锡。
在其中一个实施例中，所述支撑部为多个；多个所述支撑部相互间隔排布在所述非显示区；各支撑部上靠近所述第二基板的一端均位于第一平面；所述第一平面平行于所述第二基板的表面。
在其中一个实施例中，所述支撑部与所述第二基板接触的总面积为所述非显示区面积的1％～5％。
在其中一个实施例中，所述支撑部包括第一支撑部和第二支撑部；所述第一支撑部形成于第一区域；所述第一区域位于所述第一基板的公共电极上方；所述第二支撑部位于第一基板的第二区域。
在其中一个实施例中，所述支撑部规则地排布于所述非显示区。
在其中一个实施例中，所述支撑部的横截面的形状为对称图形。
在其中一个实施例中，所述支撑部的横截面的形状为圆形、椭圆形或者矩形。
在其中一个实施例中，所述显示面板还包括液晶层；所述液晶层形成于所述第一基板和所述第二基板之间。
在其中一个实施例中，所述显示面板为液晶显示面板、有机发光二极管显示面板或者量子点发光二极管显示面板。
一种显示面板，包括显示区和围绕所述显示区的非显示区；所述显示面板包括：
第一基板；
第二基板，与所述第一基板相对间隔设置；
液晶层，设置于所述第一基板和所述第二基板之间；
框胶，设置于所述第一基板和所述第二基板之间且位于所述非显示区；所述框胶包围所述液晶层；以及
多功能层，设置于所述第一基板上且位于所述非显示区；所述多功能层包括支撑部；所述支撑部内嵌于所述框胶中且与所述第二基板面接触，以实现所述第一基板和所述第二基板的电连接；
所述多功能层包括支撑层和导电层；所述支撑层形成于所述第一基板上；所述支撑层包括所述支撑部；所述支撑层开设有第一过孔；所述第一过孔位于所述第一基板的公共电极上方；所述导电层形成于所述支撑层上；所述导电层中位于所述支撑部上的区域与所述第二基板电连接；所述导电层还通过所述第一过孔与所述第一基板电连接；
所述支撑层为遮光层；所述支撑部与所述第二基板接触的总面积为所述非显示区面积的1％～5％。
在其中一个实施例中，所述第一基板包括：
衬底；
薄膜晶体管层，形成在所述衬底上，包括公共电极；
第一钝化层，形成在所述薄膜晶体管层上且远离所述衬底；以及
像素电极，形成于所述第一钝化层上且位于所述显示区；
其中，所述导电层通过所述第一过孔与所述第一基板的公共电极连接； 所述像素电极和所述公共电极的厚度相同；
所述第一基板还包括形成于所述薄膜晶体管层的栅极上的支撑物；所述支撑部和所述支撑物具有相同的结构且在同一道工序中制备得到；所述支撑物和所述支撑层均由遮光材料形成。
一种显示终端，包括终端本体和显示面板；所述显示面板设置于所述终端本体上；所述显示面板包括显示区和围绕所述显示区的非显示区；所述显示面板包括：
第一基板；
第二基板，与所述第一基板相对间隔设置；
框胶，设置于所述第一基板和所述第二基板之间且位于所述非显示区；以及
多功能层，设置于所述第一基板上且位于所述非显示区；所述多功能层包括支撑部；所述支撑部内嵌于所述框胶中且与所述第二基板面接触，所述多功能层为阻光层。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其他特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他实施例的附图。
图1为传统的显示面板的结构示意图；
图2为一实施例中的显示面板的俯视图；
图3为图2所示实施例的显示面板的结构示意图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”以及“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，需要说明的是，当元件被称为“形成在另一元件上”时，它可以直接连接到另一元件上或者可能同时存在居中元件。当一个元件被认为是“连接”另一个元件，它可以直接连接到另一元件或者同时存在居中元件。相反，当元件被称作“直接在”另一元件“上”时，不存在中间元件。
液晶显示面板(Liquid Crystal Display,LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。例如，显示面板越来越多的应用在如移动电话、个人数字助理(PAD)、数字相机、计算机屏幕或笔记本电脑屏幕等显示终端上。传统的显示面板一般由上下两个基板即第一基板(Array)110与第二基板(CF基板)120对盒形成，如图1所示。对盒后上下基板的四周用边框胶130进行贴合防止液晶溢出和水汽侵入，并维持液晶盒周边盒厚。为了使贴合后的上下基板形成的显示面板盒厚均匀，并使上下基板的公共电极电性导通，一般在外围封框胶130的区域掺入一定比例的硅球140和金球150。硅球140在面板周边结构中起支撑周边盒厚的作用，金球150用于导通上下基板。经发明人发现，由于球形的硅球140和金球150是独立于TFT第一基板110和第二基板120，并掺杂在用于粘合第一基板110和第二基板120的框胶内，与上下的两个基板的接触面积很小，极不稳定，很难控制周边盒厚，导致显示面板的周边厚度不均匀，从而影响面板显示效果。
为解决上述问题，本申请一实施例提供了一种显示面板。显示面板可以为LCD显示面板(Liquid Crystal Display，液晶显示面板)、OLED(Organic  Light-Emitting Diode，有机发光二极管)显示面板、QLED(Quantum Dot light Emitting Diode，量子点发光二极管)显示面板等。同时，显示面板10可以为平面显示面板或曲面显示面板。可以理解，显示面板10的类型包括但并不限于上述示例。当显示面板10为LCD显示面板时，可以为VA(Vertical Alignment liquid crystal，垂直排列液晶型)、TN(Twisted Nematic，扭曲向列型)或者IPS(In-Plane Switching，平面转换型)等LCD显示面板。在本实施例中，以液晶显示面板为例进行说明。
一种显示面板包括显示区20和非显示区22，如图2所示。非显示区22围绕显示区20。非显示区22不进行显示而作为边框区域以放置电路以及如摄像头、LOGO等元器件。非显示区22可以围绕在显示区20的四周，也可以仅仅设置在显示区20的一侧，或者三侧，以实现人们对全屏显示的需求。
图3为图2所示的显示面板的结构示意图。参见图3，该显示面板包括第一基板210、第二基板220、液晶层230、框胶240以及多功能层250。在本实施例中，第二基板220与第一基板210相对间隔设置，通常也可以称之为上下基板，也即第一基板210为下基板，而第二基板220为上基板。液晶层230设置在第一基板210和第二基板220之间。框胶240设置在第一基板210和第二基板220之间，并位于非显示区22。框胶240包围液晶层230。框胶240用于实现第一基板210和第二基板220之间的贴合，并防止液晶层230中的液晶溢出和水汽侵入，并维持显示面板周边厚度。多功能层250设置在第一基板210上且位于非显示区22。多功能层250包括支撑部252。支撑部252内嵌于框胶240中，且与第二基板220面接触，最终实现第一基板210和第二基板220之间的电连接。可以理解，本案中第一基板210和第二基板220之间的电连接，是指第一基板210的公共电极212与第二基板220的公共电极226连接。多功能层250为阻光层，也即其至少包含一层遮光材料。
上述显示面板，在第一基板210上形成有多功能层250。该多功能层250位于非显示区22。该多功能层250包括支撑部252。支撑部252内嵌于框胶 240中且与第二基板220面接触，实现第一基板210与第二基板220的电连接。由于支撑部252和多功能层250为一体结构，而多功能层250直接形成在第一基板210上，也即支撑部252并非如传统的金球一样相对于第一基板210和第二基板220是独立的，故其稳定性会受到第一基板210以及第二基板220的影响，稳定性较好。并且，多功能层250形成于第一基板210上，支撑部252与第一基板220为面接触，具有较大的接触面积，稳定性较好，容易实现第一基板210和第二基板220的对盒，且容易对显示面板的周边厚度进行控制，不会带来显示面板的周边厚度不均匀的问题，从而不会影响面板显示效果。并且多功能层250为阻光层，从而无需再为非显示区设置遮光层，有利于实现显示面板的轻薄化。
在一实施例中，第一基板210包括衬底202、薄膜晶体管层、第一钝化层204以及像素电极218。第一钝化层204形成在薄膜晶体管层上。第一钝化层204作为保护层，用于对薄膜晶体管层进行保护，以将薄膜晶体管层中的金属表面转化为不易被氧化的状态,而延缓金属的腐蚀速度。
薄膜晶体管层包括栅极206、栅极绝缘层208、半导体层(图中未示)、源漏极(图中未示)以及公共电极212。其中，栅极206形成在衬底202上。公共电极212同样形成在衬底202上。栅极206和公共电极212可以在同一制备工序中制备得到，也即栅极206和公共电极212的材质相同，均为导电材料，如金属等。栅极绝缘层208形成在衬底202上且覆盖栅极206和公共电极212的部分区域，并裸露公共电极212的部分区域，以方便公共电极212与其他元器件电连接。半导体层形成在栅极绝缘层208上远离栅极层206的一侧。源漏极形成在栅极绝缘层208上，并分别与半导体层的两端连接。在一实施例中，薄膜晶体管层中还包括数条数据线(图中未示)。数据线为导电走线中的一种，其与源漏极形成在同一水平面上。数据线与源极连接，以将外部的数据信号输出至对应的薄膜晶体管的源极。可以理解，薄膜晶体管层210上还设置有扫描线和功率线。扫描线则与薄膜晶体管层的栅极206连接。数据线与源极漏极连接，故扫描线是与栅极同一工艺制作，在同一水平面上； 数据线与源极漏极在同一工艺制作，在同一水平面上。扫描线和数据线相交形成阵列排布的像素区域。
在一实施例中，衬底202可以采用玻璃或者塑料等本领域习知的材料。栅极206的材料可以为铝、铜等金属导电材料中的一种或者多种。在其他的实施例中，栅极206也可以采用其他导电材料。栅极绝缘层208的材料可以为氮化硅或者氧化硅。栅极绝缘层208的材料也可以为氧化硅和氮化硅的组合。可以理解，栅极绝缘层208还可以采用其他本领域技术人员习知的材料。在一实施例中，半导体层包括非晶硅层和N+型掺杂非晶硅层(图中未示)。非晶硅层和N+型掺杂非晶硅层依次层叠设置于栅极绝缘层208上。非晶硅(amorphous silicon，a-Si)又称无定形硅，是单质硅的一种形态。非晶硅不具有完整的金刚石晶胞，纯度不高，但是其熔点、密度和硬度明显低于晶体硅。非晶硅层(a-Si层)作为有源层，其可以采用等离子增强气相化学沉积法(Plasma Enhanced Chemical Vapor Deposition，PECVD)连续沉积形成。N+型掺杂非晶硅层形成在非晶硅层上方。在本实施例中，采用等离子增强气相化学沉积法(Plasma Enhanced Chemical Vapor Deposition，PECVD)连续沉积形成N+型掺杂非晶硅层。源漏极通过同一金属层制备而成。源漏极可以采用铝、铜、钼等导电材料制备而成。第一钝化层204作为保护层，用于对薄膜晶体管层进行保护，以将薄膜晶体管层中的金属表面转化为不易被氧化的状态,而延缓金属的腐蚀速度。第一钝化层204可以采用PV绝缘材料。
像素电极218形成在第一钝化层204上。薄膜晶体管层110可以采用本领域常用的薄膜晶体管层结构来，且本领域技术人员均知晓像素电极218与薄膜晶体管层110中的漏极连接。
在一实施例中，多功能层250包括支撑层250a和导电层250b。支撑层250a形成在第一基板210中的第一钝化层204的上方，且位于非显示区22。支撑层250a包括支撑部252。支撑层250a上形成有第一过孔254。第一过孔254位于第一基板210的公共电极212上方。导电层250b形成在支撑层250a上。导电层250b通过第一过孔254与第一基板210中的公共电极212电连接。 导电层250a中位于支撑部252上的区域与第二基板220连接，从而实现第一基板210与第二基板220之间的电连接。其中，第一过孔254的大小一般根据所需要挖孔的层的厚度来定义，一般为5微米～30微米。
在一实施例中，多功能层250中的支撑部252为多个。多个支撑部252包括第一支撑部252a和第二支撑部252b。其中，第一支撑部252a形成于第一区域。第一区域位于第一基板210的公共电极212上方。第二支撑部252b则形成在第二区域。第二区域可以为非显示区中或者框胶240所覆盖的区域中除了第一区域以外的区域。此时，第一过孔254形成在第一支撑部252a的两侧。导电层250b通过该第一过孔254与第一基板210的公共电极212电连接，并在第一支撑部252a和第二支撑部251b上靠近第二基板220的端面与第二基板220连接。在一实施例中，各支撑部252上靠近第二基板220的端面均位于第一平面。该第一平面平行于第二基板220的表面，从而确保支撑部252与第二基板220之间为面接触而不是传统的点接触，可以起到较好的支撑作用。在一实施例中，各支撑部252与第二基板220接触的总面积为非显示区22的面积的1％～5％，此时整个多功能层250具有较好的支撑作用。
在一实施例中，支撑层250a覆盖整个非显示区22，且支撑层250a为遮光层。支撑层250a可以为黑矩阵等由黑色有机胶形成的膜层。在一实施例中，第一基板210还包括形成在薄膜晶体管层的栅极上的支撑物(图中未示)。支撑物和支撑部252具有相同的结构，也即其大小、形状均相同。支撑物和支撑部252可以在同一道工序中制备得到，从而可以节省一道工序，有利于降低产品制备难度。支撑物提供支撑作用，但是并不和支撑部252一样能够提供电连接作用。在一实施例中，支撑物和支撑层250a的材料均为遮光材料，如黑矩阵，从而形成第一基板210的遮光层。此时，第二基板220上不设置遮光层(BM层)。参见图3，第二基板220包括衬底222、形成在衬底222上的彩色滤光层224以及形成在彩色滤光层224和衬底222上的公共电极226。在本实施例中，彩色滤光层224可以为色阻块。色阻块的种类可以根据像素设计确定。例如，当采用包含红色子像素(R子像素)、蓝色子像素(B子像 素)和绿色子像素(G子像素)的像素结构时，色阻块包括红色色阻块、蓝色色阻块以及绿色色阻块。当采用其他的像素结构时，色阻块的种类会随之变化，而并不限于某一特定的组成。多功能层250在实现支撑以及导电连接作用的同时还作为遮光层，从而在进行第一基板210与第二基板220的对盒时，可以更加精确的控制周边厚度。
在一实施例中，多功能层250中的导电层250b、第一基板210的像素电极212以及第二基板220的公共电极226均有相同的导电材料制备，如ITO(氧化铟锡)等。在一实施例中，导电层250b与第一基板210中的像素电极212在同一工艺步骤中制备得到。也即此时，第一基板210在形成第一钝化层204后，进行支撑层250a的制备，然后在制备得到250a后在整个第一基板210的表面沉积一层厚度均匀的导电材料如ITO，然后通过刻蚀等分别形成像素电极212和多功能层250的导电层250b。导电层250b实现第二基板220的公共电极226和第一基板210的公共电极218之间的电连接。
在一实施例中，支撑部252的结构可以根据需要进行设置，只要能够实现支撑作用且与第二基板220为面接触即可。具体地，支撑部252的横截面的形状可以为圆形、椭圆形、矩形或者其他形状。本申请中，横截面均指平行于第二基板220的表面的平面。进一步地，支撑部252的横截面为对称图形，且支撑部规则排布在非显示区22中，以更好地控制周边厚度的均匀性。支撑部252的形状能够满足支撑作用以及确保导电层250b与第一基板210和第二基板220之间的电连接即可。在一实施例中，将支撑部252的纵截面中与第二基板220接触的边称为上底，而与第一基板210接触的边称为下底。上底的宽度可以为10微米～20微米，而下底的宽度可以为20微米～30微米。上底和下底的宽度并不需要严格限定，而是可以根据实际产品尺寸来进行调节。在一实施例中，当支撑层250a同时作为遮光层时，未形成有支撑部252的区域的厚度与传统的遮光层的厚度相同，为1微米～1.5微米。进一步地，支撑部252可以为实心结构，从而具有较好的支撑作用。
本申请一实施例还提供一种显示终端，该显示终端包括终端本体，还包 括如前述任一实施例中所述的显示面板。显示终端可以如移动电话、个人数字助理(PAD)、数字相机、计算机屏幕或笔记本电脑屏幕等。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (19)

  1. 一种显示面板，包括显示区和围绕所述显示区的非显示区；所述显示面板包括：
    第一基板；
    第二基板，与所述第一基板相对间隔设置；
    框胶，设置于所述第一基板和所述第二基板之间且位于所述非显示区；以及
    多功能层，设置于所述第一基板上且位于所述非显示区；所述多功能层包括支撑部；所述支撑部内嵌于所述框胶中且与所述第二基板面接触，所述多功能层为阻光层。
  2. 根据权利要求1所述的显示面板，其中，所述多功能层包括支撑层和导电层；所述支撑层形成于所述第一基板上；所述支撑层包括所述支撑部；所述支撑层开设有第一过孔；所述第一过孔位于所述第一基板的公共电极上方；
    所述导电层形成于所述支撑层上；所述导电层中位于所述支撑部上的区域与所述第二基板电连接；所述导电层还通过所述第一过孔与所述第一基板电连接。
  3. 根据权利要求2所述的显示面板，其中，所述第一过孔的孔径为5微米～30微米。
  4. 根据权利要求2所述的显示面板，其中，所述第一基板包括：
    衬底；
    薄膜晶体管层，形成在所述衬底上，包括公共电极；
    第一钝化层，形成在所述薄膜晶体管层上且远离所述衬底；以及
    像素电极，形成于所述第一钝化层上且位于所述显示区；
    其中，所述导电层通过所述第一过孔与所述第一基板的公共电极连接；所述像素电极和所述公共电极的厚度相同。
  5. 根据权利要求4所述的显示面板，其中，所述第一基板还包括形成于 所述薄膜晶体管层的栅极上的支撑物；所述支撑部和所述支撑物具有相同的结构且在同一道工序中制备得到；所述支撑物和所述支撑层均由遮光材料形成。
  6. 根据权利要求5所述的显示面板，其中，所述支撑物和所述支撑层均为黑矩阵。
  7. 根据权利要求4所述的显示面板，其中，所述第一钝化层为PV绝缘材料。
  8. 根据权利要求4所述的显示面板，其中，所述导电层和所述像素电极均为氧化铟锡。
  9. 根据权利要求2所述的显示面板，其中，所述支撑部为多个；多个所述支撑部相互间隔排布在所述非显示区；各支撑部上靠近所述第二基板的一端均位于第一平面；所述第一平面平行于所述第二基板的表面。
  10. 根据权利要求2所述的显示面板，其中，所述支撑部与所述第二基板接触的总面积为所述非显示区面积的1％～5％。
  11. 根据权利要求2所述的显示面板，其中，所述支撑部包括第一支撑部和第二支撑部；所述第一支撑部形成于第一区域；所述第一区域位于所述第一基板的公共电极上方；所述第二支撑部位于第一基板的第二区域。
  12. 根据权利要求1所述的显示面板，其中，所述支撑部规则地排布于所述非显示区。
  13. 根据权利要求1所述的显示面板，其中，所述支撑部的横截面的形状为对称图形。
  14. 根据权利要求13所述的显示面板，其中，所述支撑部的横截面的形状为圆形、椭圆形或者矩形。
  15. 根据权利要求1所述的显示面板，其中，所述显示面板还包括液晶层；所述液晶层形成于所述第一基板和所述第二基板之间。
  16. 根据权利要求1所述的显示面板，其中，所述显示面板为液晶显示面板、有机发光二极管显示面板或者量子点发光二极管显示面板。
  17. 一种显示面板，包括显示区和围绕所述显示区的非显示区；所述显示面板包括：
    第一基板；
    第二基板，与所述第一基板相对间隔设置；
    液晶层，设置于所述第一基板和所述第二基板之间；
    框胶，设置于所述第一基板和所述第二基板之间且位于所述非显示区；所述框胶包围所述液晶层；以及
    多功能层，设置于所述第一基板上且位于所述非显示区；所述多功能层包括支撑部；所述支撑部内嵌于所述框胶中且与所述第二基板面接触，以实现所述第一基板和所述第二基板的电连接；
    所述多功能层包括支撑层和导电层；所述支撑层形成于所述第一基板上；所述支撑层包括所述支撑部；所述支撑层开设有第一过孔；所述第一过孔位于所述第一基板的公共电极上方；所述导电层形成于所述支撑层上；所述导电层中位于所述支撑部上的区域与所述第二基板电连接；所述导电层还通过所述第一过孔与所述第一基板电连接；所述支撑层为遮光层；所述支撑部与所述第二基板接触的总面积为所述非显示区面积的1％～5％。
  18. 根据权利要求17所述的显示面板，其中，所述第一基板包括：
    衬底；
    薄膜晶体管层，形成在所述衬底上，包括公共电极；
    第一钝化层，形成在所述薄膜晶体管层上且远离所述衬底；以及
    像素电极，形成于所述第一钝化层上且位于所述显示区；
    其中，所述导电层通过所述第一过孔与所述第一基板的公共电极连接；所述像素电极和所述公共电极的厚度相同；
    所述第一基板还包括形成于所述薄膜晶体管层的栅极上的支撑物；所述支撑部和所述支撑物具有相同的结构且在同一道工序中制备得到；所述支撑物和所述支撑层均由遮光材料形成。
  19. 一种显示终端，包括终端本体和显示面板；所述显示面板设置于所 述终端本体上；所述显示面板包括显示区和围绕所述显示区的非显示区；所述显示面板包括：
    第一基板；
    第二基板，与所述第一基板相对间隔设置；
    框胶，设置于所述第一基板和所述第二基板之间且位于所述非显示区；以及
    多功能层，设置于所述第一基板上且位于所述非显示区；所述多功能层包括支撑部；所述支撑部内嵌于所述框胶中且与所述第二基板面接触，所述多功能层为阻光层。
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