WO2019131856A1 - Semiconductor back surface adhering film - Google Patents
Semiconductor back surface adhering film Download PDFInfo
- Publication number
- WO2019131856A1 WO2019131856A1 PCT/JP2018/048089 JP2018048089W WO2019131856A1 WO 2019131856 A1 WO2019131856 A1 WO 2019131856A1 JP 2018048089 W JP2018048089 W JP 2018048089W WO 2019131856 A1 WO2019131856 A1 WO 2019131856A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- back contact
- contact film
- resin
- semiconductor
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Definitions
- the present invention relates to a semiconductor back contact film. More particularly, the present invention relates to a semiconductor back contact film that can be used in the process of manufacturing a semiconductor device.
- a flip chip type semiconductor device in which semiconductor elements such as semiconductor chips are mounted on a substrate by flip chip bonding is widely used.
- a semiconductor back contact film may be used as a film for forming a protective film on the back surface of the semiconductor element in order to prevent damage or the like of the semiconductor element (Patent Documents 1 and 2) reference).
- the conventional semiconductor back contact film usually contains a coloring agent so as to be able to give imprint information by laser marking, and thereby has a light shielding property.
- a coloring agent so as to be able to give imprint information by laser marking, and thereby has a light shielding property.
- thinning of the silicon layer is in progress. Along with this, thinning of the semiconductor back contact film is also required.
- the coloring agent having visible light absorption used for laser marking is in many cases not having absorption in the near infrared, and in addition to transmitting infrared light, along with thinning of the film. There is a problem that the light shielding property is reduced.
- the circuit surface of the semiconductor adversely affects noise and the like, or the circuit surface can be viewed by using an infrared microscope or the like. In some cases, confidentiality can not be maintained.
- the present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor back contact film excellent in laser marking properties and infrared shielding properties.
- the present inventors intensively studied to achieve the above object, and as a result, they contain a black pigment, and an A layer which becomes the outermost layer at the time of close contact with the back surface of the semiconductor and a black pigment and have an absorbance of 1300 nm It was also found that according to the semiconductor back contact film having the B layer which is high and which is the inner layer located between the outermost layer and the semiconductor element when the semiconductor back contact is in close contact, the laser marking property and the infrared shielding property are excellent. The present invention has been completed based on these findings.
- the present invention is a semiconductor back contact film used in close contact with the back surface of the semiconductor, which contains a black pigment and contains an A layer which becomes the outermost layer at the time of back contact with the semiconductor and a black pigment and at a wavelength of 1300 nm.
- the semiconductor back contact film having such a configuration can be used in the process of manufacturing a semiconductor device.
- the semiconductor back contact film of the present invention contains a black pigment, and in use, that is, a layer (A layer) which becomes the outermost layer when the semiconductor back contact film is in close contact with the semiconductor back, and a black pigment when used It has a layer (B layer) to be a layer (inner layer) positioned between the surface layer and the semiconductor element, and the absorbance of the B layer at a wavelength of 1300 nm is higher than the absorbance of the A layer at a wavelength of 1300 nm.
- the outermost layer is excellent in laser marking property when the semiconductor back contact is in close contact, and the inner layer can sufficiently absorb infrared rays, and is excellent in infrared ray shielding properties.
- the content ratio of the black pigment in the B layer is preferably higher than the content ratio of the black pigment in the A layer.
- the absorbance of the B layer at a wavelength of 1300 nm tends to be higher than the absorbance of the A layer at a wavelength of 1300 nm.
- the layer which becomes an inner layer at the time of semiconductor back surface adhesion of the semiconductor back adhesion film of this invention is a layer which contains a black pigment as a whole and whose absorbance in wavelength 1300nm is higher than A layer.
- the outermost layer is excellent in laser marking property when the semiconductor back contact is in contact, and the entire inner layer can absorb infrared rays more sufficiently. Excellent.
- the ratio [B layer / A layer] of the absorbance at a wavelength 1300 nm of the layer B to the absorbance at a wavelength 1300 nm of the layer A is preferably 1.2 to 15.
- the semiconductor back contact film of the present invention having such a constitution has a larger difference in contrast between the A layer and the B layer, and is further excellent in the laser marking property and the infrared ray shielding property of the semiconductor back contact film of the present invention.
- each of the layer A and the layer B preferably contains carbon black as the black pigment.
- the semiconductor back contact film of the present invention having such a configuration can easily adjust the absorbance of the A layer and the B layer by adjusting the content ratio of the black pigment, and the back contact film of the present invention can be easily obtained. Can.
- the content ratio of the black pigment in the layer A is preferably 0.05 to 5% by mass.
- the laser marking property is more excellent.
- sublimation of organic components such as a binder resin resulting from an increase in light-to-heat conversion due to excessive absorption of light can be suppressed, and character roughening can be suppressed.
- air bubbles are unlikely to be generated between the layers.
- the content ratio of the black pigment in the layer B is preferably 0.5 to 10% by mass.
- the semiconductor back contact film of the present invention is excellent in laser marking properties and infrared shielding properties. For this reason, by using the semiconductor back contact film of the present invention, even when the semiconductor wafer is thinned, laser marking can be performed clearly, and at the same time the semiconductor is irradiated with infrared rays. It is possible to suppress the adverse effect on the circuit surface or the visibility of the circuit surface.
- the semiconductor back contact film of the present invention (sometimes referred to simply as “back contact film”) is a film used in close contact with the back of a semiconductor, and is for forming a protective film on the back (so-called back) of a semiconductor chip.
- a film (semiconductor back surface protection film) is included.
- the back contact film of the present invention contains a black pigment, a layer which becomes the outermost layer at the time of close contact with the semiconductor, and a layer which contains the black pigment and whose absorbance at a wavelength of 1300 nm is higher than the layer which is the above outermost layer It has at least a layer to be an inner layer located between the outermost layer and the semiconductor element at the time of close contact with the back surface.
- a layer a layer which contains a black pigment and which is the outermost layer when the back contact film of the present invention is used (that is, the semiconductor back contact film is in close contact with the back of the semiconductor)
- B layer a layer that contains a black pigment and becomes the above inner layer at the time of use
- the "surface” of a semiconductor refers to the surface on which bumps for flip chip mounting of the work are formed
- the “back” is the opposite side of the surface, that is, the bumps are formed. It means the side that is not
- the “back contact film” is a film which is in close contact with the back of the work even after being mounted on the semiconductor device, and peeled off in the process of manufacturing semiconductor devices such as dicing tapes and separators described later. Layers are not included.
- the above-mentioned "uppermost layer” refers to the outermost layer in the back contact film, and may have a layer to be peeled off in the process of manufacturing a semiconductor device such as a dicing tape or a separator described later.
- FIG. 1 One embodiment of the back contact film of the present invention is shown in FIG.
- the back contact film 10 of the present invention is disposed on the separator 30.
- the back contact film 10 of the present invention has a multilayer structure including the adhesive layer 11 and the laser mark layer 12, and the laser mark layer 12 is in close contact with the separator 30 in a peelable manner.
- the laser mark layer 12 shown in FIG. 1 corresponds to the layer (layer A) which is the outermost surface when the workpiece 10 is in close contact with the film 10, and the adhesive layer 11 is the outermost layer when the workpiece 10 is in close contact with the film 10. It corresponds to a layer (B layer) to be an inner layer located between semiconductor elements.
- layer A which is the outermost surface when the workpiece 10 is in close contact with the film 10
- the adhesive layer 11 is the outermost layer when the workpiece 10 is in close contact with the film 10.
- a layer (B layer) to be an inner layer located between semiconductor elements.
- the adhesive layer 11 and the laser mark layer 12 may have the reverse positional relationship (that is, an aspect in which the adhesive layer 11 is in close contact with the separator 30 so as to be peelable).
- the back contact film 10 of the present invention can be used by being attached to the back of the work and heat cured.
- the positional relationship between the adhesive layer 11 and the laser mark layer 12 is opposite to that shown in FIG. 1, it can be preferably used to produce a dicing tape-integrated back contact film described later.
- the adhesive layer 11 is thermally cured by heat treatment at 120 ° C. for 2 hours, while the laser mark layer 12 is not substantially thermally cured, or 2 at 120 ° C. While the adhesive layer 11 is cured by radiation irradiation, while the adhesive layer 11 is cured by radiation, while the adhesive layer 11 is cured by radiation, while the adhesive layer 11 and the laser mark layer 12 are cured.
- the layer not thermally cured substantially by the heat treatment at 120 ° C. for 2 hours in the back contact film 10 includes a thermosetting layer that has already been cured.
- the absorbance of the B layer at a wavelength of 1300 nm is higher than the absorbance of the A layer at a wavelength of 1300 nm.
- the ratio [B layer / A layer] of the absorbance at wavelength 1300 nm of layer B to the absorbance at wavelength 1300 nm of layer A is not particularly limited, but is preferably 1.2 or more, more preferably 1.5 or more, and more preferably Preferably it is 1.8 or more.
- the difference of the contrast of A layer and B layer becomes larger as the said ratio is 1.2 or more, and it is further excellent by the laser marking property and infrared rays shielding property of the back contact film of this invention.
- the ratio is, for example, 15 or less, preferably 10 or less.
- the absorbance of each layer can be measured using a known spectrophotometer.
- the absorbance of the layer A at a wavelength of 1300 nm is not particularly limited, but is preferably 3 or less, more preferably 2.5 or less, and still more preferably 2 or less.
- a layer can be made into a layer more suitable for laser marking property as the said light absorbency is 3 or less, and it can be set as the structure which is further excellent by the laser marking property and infrared rays shielding property of the back contact film of this invention.
- the absorbance is, for example, 0.1 or more.
- the absorbance of the B layer at a wavelength of 1300 nm is not particularly limited, but is preferably 0.5 or more, more preferably 0.7 or more, and still more preferably 1 or more. It is excellent by infrared shielding property as the said light absorbency is 0.5 or more.
- the absorbance is, for example, 5 or less.
- the absorbance of the layer A at a wavelength of 550 nm is not particularly limited, but is preferably 0.2 to 4.5, more preferably 0.3 to 4, and still more preferably 0.4 to 3.5. It is excellent by laser marking property as the said light absorbency is 0.2 or more.
- the absorbance is 4.5 or less, sublimation of organic components such as a binder resin caused by an increase in light-to-heat conversion due to excessive absorption of light can be suppressed, and character roughening can be suppressed. Further, in the dicing tape-integrated back contact film, air bubbles are unlikely to be generated between the layers.
- a layer is a layer which becomes the outermost layer in a back contact film, when a back contact film is used in close contact with the back surface of a work.
- the layer A functions as a laser mark layer when the workpiece is in close contact with the back surface, and laser marking is performed in the process of manufacturing the semiconductor device.
- the A layer contains a black pigment. Thereby, high contrast can be ensured between the marking location by the laser marking of layer A and the other location, and good visibility can be realized for the marking information.
- the said black pigment may contain only 1 type, and may contain 2 or more types.
- black pigment examples include carbon black, carbon nanotubes, graphite (graphite), azo pigments such as copper oxide, manganese dioxide, azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite And magnetite, chromium oxide, iron oxide, molybdenum disulfide, complex oxide black pigment and the like.
- carbon black is preferable.
- carbon black examples include furnace black, channel black, acetylene black, thermal black, lamp black and the like.
- black colorants include pigment blacks 1 and 7 and the like.
- the content ratio of the black pigment is preferably 0.05 to 5% by mass, more preferably 0.1 to 2% by mass, and still more preferably 0.2 to 1.5% by mass with respect to the total mass of the layer A. It is.
- the light absorbency of A layer can be made high as the said content rate is 0.05 mass% or more, and it is excellent by laser marking property.
- the absorbance of the layer A can be appropriately suppressed, and sublimation of organic components such as a binder resin resulting from an increase in light-to-heat conversion due to excessive absorption of light is suppressed. Can be suppressed. Further, in the dicing tape-integrated back contact film, air bubbles are unlikely to be generated between the layers.
- the composition (resin composition) which forms A layer and A layer contains a thermoplastic resin.
- the layer A and the resin composition may contain a thermosetting resin and a thermoplastic resin. It may contain a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to form a bond.
- the resin composition does not need to contain a thermosetting resin (epoxy resin etc.).
- the thermoplastic resin in the layer A and the above-mentioned resin composition has, for example, a binder function.
- the thermoplastic resin include acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin , Polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as polyethylene terephthalate (PET) and polybutylene terephthalate (PBT), polyamideimide resins And fluorine resins.
- the thermoplastic resin may be used alone or in combination of two or more.
- an acrylic resin is preferable from the viewpoint of having few ionic impurities and high heat resistance.
- the said acrylic resin is a polymer containing the structural unit derived from an acryl-type monomer (The monomer component which has a (meth) acryloyl group in a molecule
- the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group is mentioned, for example.
- the hydrocarbon group-containing (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester.
- Examples of the above (meth) acrylic acid alkyl ester include methyl ester of (meth) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (lauryl ester), tridecyl ester, tetradecyl ester Hexadecyl ester, octadecyl ester, eicosyl ester and the like.
- Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid.
- Examples of the (meth) acrylic acid aryl ester include phenyl ester of (meth) acrylic acid and benzyl ester.
- hydrocarbon group-containing (meth) acrylic acid ester having an alkoxy group examples include those in which one or more hydrogen atoms in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth) acrylic acid ester are substituted with an alkoxy group, For example, 2-methoxymethyl ester of (meth) acrylic acid, 2-methoxyethyl ester, 2-methoxybutyl ester and the like can be mentioned.
- the hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more.
- the said acrylic resin is a structure derived from the other monomer component which can be copolymerized with the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group for the purpose of modification, such as cohesion force and heat resistance. It may contain units.
- functional group containing functional groups such as a carboxy group containing monomer, an acid anhydride monomer, a hydroxyl group containing monomer, a glycidyl group containing monomer, a sulfonic acid group containing monomer, a phosphoric acid group containing monomer, acrylamide, acrylonitrile etc. are mentioned, for example. Monomers etc. are mentioned.
- carboxy group-containing monomer examples include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid and the like.
- acid anhydride monomer examples include maleic anhydride, itaconic anhydride and the like.
- Examples of the above-mentioned hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate.
- Examples of the glycidyl group-containing monomers include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate.
- sulfonic acid group-containing monomer examples include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2-methylpropane sulfonic acid, (meth) acrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate, (meth Acryloyloxy naphthalene sulfonic acid etc. are mentioned.
- examples of the above-mentioned phosphoric acid group-containing monomer include 2-hydroxyethyl acryloyl phosphate and the like. The other monomer components may be used alone or in combination of two or more.
- the acrylic resin that may be contained in the layer A and the above resin composition is, from the viewpoint of achieving both the visibility of the imprinted information by laser marking and the good cleavability at the time of expanding, butyl acrylate, ethyl acrylate, acrylonitrile, and acrylic It is preferable that it is a copolymer of monomers appropriately selected from acids.
- thermosetting resin examples include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, A thermosetting polyimide resin etc. are mentioned.
- the said thermosetting resin may use only 1 type, and may use 2 or more types.
- An epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like which may cause corrosion of the semiconductor chip tends to be small.
- a hardening agent of an epoxy resin a phenol resin is preferable.
- the epoxy resin examples include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, hydrogenated bisphenol A epoxy resin, bisphenol AF epoxy resin, biphenyl resin Cresol novolac epoxy resin such as epoxy resin, naphthalene epoxy resin, fluorene epoxy resin, phenol novolac epoxy resin, ortho cresol novolac epoxy resin, trishydroxyphenylmethane epoxy resin, tetraphenylolethane epoxy resin etc A multifunctional epoxy resin is mentioned.
- the said epoxy resin may use only 1 type, and may use 2 or more types.
- a phenol novolac epoxy resin an ortho cresol novolac epoxy resin, a biphenyl epoxy resin, a trishydroxyphenylmethane epoxy resin, tetrapheny, since they are rich in reactivity with a phenol resin as a curing agent and excellent in heat resistance.
- Roll ethane type epoxy resin is preferred.
- phenol resin which can act as a curing agent for epoxy resin for example, novolac type phenol resins such as phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, nonylphenol novolac resin and the like can be mentioned.
- phenol resin polyoxystyrenes, such as a resol type phenol resin and polypara oxystyrene, are also mentioned.
- the said phenol resin may use only 1 type, and may use 2 or more types.
- the phenol resin has a hydroxyl group in the phenol resin per equivalent of epoxy group in the epoxy resin component. It is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.
- the content of the thermosetting resin is preferably 5 to 60% by mass, more preferably the total mass of the layer A or the resin composition. Is 10 to 50% by mass.
- thermosetting functional group containing acrylic resin can be used as said thermoplastic resin, for example.
- the acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth) acrylic acid ester as the largest structural unit in mass ratio.
- the hydrocarbon group containing (meth) acrylic acid ester the hydrocarbon illustrated as a hydrocarbon group containing (meth) acrylic acid ester which forms the acrylic resin as a thermoplastic resin which may be contained in the above-mentioned A layer, for example A group containing (meth) acrylic acid ester is mentioned.
- thermosetting functional group in a thermosetting functional group containing acrylic resin a glycidyl group, a carboxy group, a hydroxyl group, an isocyanate group etc. are mentioned, for example. Among them, glycidyl group and carboxy group are preferable. That is, as a thermosetting functional group containing acrylic resin, a glycidyl group containing acrylic resin and a carboxy group containing acrylic resin are especially preferable.
- thermosetting functional group-containing acrylic resin it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin, and as the curing agent, for example, it is exemplified as a crosslinking agent which can be included in a radiation curable adhesive for forming an adhesive layer described later.
- the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group
- thermosetting catalyst thermosetting accelerator
- the curing reaction of the resin component can be sufficiently advanced to cure the layer A, and the curing reaction rate can be increased.
- thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogenborane compounds.
- imidazole compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole and 2-phenyl- 4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazo Lilium trimellitate, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl- (1 ')]-Ethyl-s-triazine, 2,4-diamide -6-
- triphenyl phosphine compounds include triphenyl phosphine, tributyl phosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyl tolyl phosphine, tetraphenyl phosphonium bromide, methyl triphenyl phosphonium and methyl triphenyl Phosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride and the like can be mentioned.
- the triphenylphosphine-based compounds also include compounds having both a triphenylphosphine structure and a triphenylborane structure.
- thermosetting catalyst examples include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, triphenylphosphine triphenylborane and the like.
- amine compounds include monoethanolamine trifluoroborate, dicyandiamide and the like.
- trihalogen borane compounds include trichloroborane and the like.
- the said thermosetting catalyst may contain only 1 type, and may contain 2 or more types.
- the layer A and the resin composition may contain a filler.
- a filler By including the filler, it is easy to adjust the physical properties such as the modulus of elasticity of the layer A, the strength at yield point, and the elongation at break. Moreover, it becomes possible to provide marking information more clearly by laser marking.
- a filler an inorganic filler and an organic filler are mentioned.
- the inorganic filler for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitrided Silicon, boron nitride, crystalline silica, amorphous silica and the like can be mentioned.
- single metals such as aluminum, gold, silver, copper, nickel and the like, alloys, amorphous carbon, graphite and the like can also be mentioned.
- constituent material of the organic filler examples include poly (methyl methacrylate) (PMMA), polyimide, polyamide imide, polyether ether ketone, polyether imide, and polyester imide.
- PMMA poly (methyl methacrylate)
- the said filler may contain only 1 type, and may contain 2 or more types.
- the filler may have various shapes such as sphere, needle, and flake.
- the average particle diameter of the filler is preferably 10 ⁇ m or less, more preferably 8 ⁇ m or less, and still more preferably 7 ⁇ m or less.
- the average particle diameter is preferably 0.1 ⁇ m or more, and more preferably 0.2 ⁇ m or more.
- the average particle diameter is 10 ⁇ m or less, irregular reflection of a light beam irradiated at the time of laser marking can be suppressed, and the infrared shielding property is excellent, and imprint information can be more clearly provided by laser marking. Moreover, it is excellent by cutting property about the back contact film which will be fragmented.
- the average particle diameter of the filler can be determined, for example, using a light intensity type particle size distribution analyzer (trade name “LA-910”, manufactured by Horiba, Ltd.).
- the content ratio of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more based on the total mass of the layer A or the resin composition.
- the content ratio is preferably 60% by mass or less, more preferably 57% by mass or less, and still more preferably 55% by mass or less.
- the layer A and the above resin composition may contain other components as needed.
- flame retardants a silane coupling agent, an ion trap agent, coloring agents other than the said black pigment, etc.
- examples of the flame retardant include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complexed metal hydroxides, phosphazene compounds, antimony trioxide, Antimony oxide, brominated epoxy resin etc. are mentioned.
- silane coupling agent examples include ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, and ⁇ -glycidoxypropylmethyldiethoxysilane.
- Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (eg, “IXE-300” manufactured by Toagosei Co., Ltd.), and zirconium phosphate having a specific structure (eg, manufactured by Toagosei Co., Ltd.) “IXE-100”), magnesium silicate (eg “Kyoward 600” manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (eg “Kyoward 700 manufactured by Kyowa Chemical Industry Co., Ltd.”) and the like.
- Compounds capable of forming a complex with a metal ion can also be used as an ion trapping agent.
- triazole compounds examples include triazole compounds, tetrazole compounds and bipyridyl compounds.
- triazole compounds are preferable from the viewpoint of the stability of the complex formed with the metal ion.
- a triazole compound for example, 1,2,3-benzotriazole, 1- ⁇ N, N-bis (2-ethylhexyl) aminomethyl ⁇ benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-) 5-Methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-t-butyl-5-methylphenyl) ) 5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2 -Benzotriazoly
- hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds and polyphenol compounds can also be used as the ion trap agent.
- a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralpine, tannin, gallic acid, methyl gallate, pyrogallol and the like.
- colorants other than the black pigment include cyan colorants, magenta colorants, yellow colorants and the like. The other components may be used alone or in combination of two or more.
- the layer A is preferably a thermosetting layer (that is, a thermosetting layer or a thermosetting layer), and the thermosetting component is a thermosetting layer (thermosetting layer) that is thermosetting. More preferable.
- the thermosetting A layer is formed by curing a thermosetting resin composition layer formed from the resin composition forming the A layer.
- (B layer) B layer is a layer used as an inner layer (layer located between the outermost layer and work) in the back contact film when the back contact film is used in close contact with the back surface of the work.
- the layer B may be an adhesive layer having a bonding surface to the rear surface of the workpiece when in close contact with the rear surface of the workpiece, or may be an intermediate layer positioned between the adhesive layer and the outermost layer.
- the layer B to be the adhesive layer may have a thermosetting property so that it can be adhered and protected to the back surface of the work by heat curing after being attached to the back surface of the work.
- the adhesive layer is non-thermosetting and does not have thermosetting property, the adhesive layer is adhered to the back surface of the work by adhesion (wettability) at the interface due to pressure etc. It is possible.
- the B layer contains a black pigment. Thereby, the infrared ray blocking property of the B layer can be made excellent.
- the said black pigment may contain only 1 type, and may contain 2 or more types.
- black-based pigment examples include those exemplified as the black pigment contained in the above-mentioned A layer. Among them, carbon black is preferable.
- the black pigment contained in the B layer is preferably the same as the black pigment contained in the A layer. That is, when the black pigment in the A layer is carbon black, the black pigment in the B layer is preferably carbon black.
- the black pigment in the A layer and the black pigment in the B layer are the same type (especially, both are carbon black), the absorbance of the A layer and the B layer can be easily adjusted by adjusting the content ratio, and this is easily The back contact film of the invention can be obtained.
- the content of the black pigment in the layer B is preferably higher than the content of the black pigment in the layer A.
- the absorbance of the B layer tends to be higher than the absorbance of the A layer.
- the absorbance of layer B is higher than the absorbance of layer A.
- the content of the black pigment in the layer B is preferably 0.5 to 10% by mass, more preferably 0.8 to 8% by mass, and still more preferably 1 to 5% by mass with respect to the total mass of the layer B. is there.
- the light absorbency of B layer can be made high as the said content rate is 0.5 mass% or more, and it is excellent by infrared rays shielding property. It is excellent by the adhesiveness to the back surface of a workpiece
- the composition (resin composition) which forms B layer and B layer contains a thermoplastic resin.
- the resin composition forming the layer B and the layer B may contain a thermosetting resin and a thermoplastic resin, and may react with a curing agent to form a bond. You may contain the thermoplastic resin which has a thermosetting functional group.
- B layer contains the thermoplastic resin which has a thermosetting functional group, the said resin composition does not need to contain thermosetting resin (an epoxy resin etc.).
- the thermoplastic resin has, for example, a binder function in the B layer.
- a binder function in the B layer As said thermoplastic resin, what was illustrated as a thermoplastic resin which the above-mentioned A layer may contain is mentioned.
- the thermoplastic resin may be used alone or in combination of two or more.
- an acrylic resin is preferable from the viewpoint of having few ionic impurities and high heat resistance.
- the acrylic resin which may be contained in the resin composition for forming the layer B and the layer B is an acrylic acid from the viewpoint of achieving both the adhesiveness to the work and the good cleavability at the time of expansion when the layer B is an adhesive layer. It is preferable that it is a copolymer of monomers suitably selected from butyl, ethyl acrylate, acrylonitrile and acrylic acid.
- thermosetting resin for example, epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin And silicone resins and thermosetting polyimide resins.
- the said thermosetting resin may use only 1 type, and may use 2 or more types.
- An epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like which may cause corrosion of the semiconductor chip tends to be small.
- a hardening agent of an epoxy resin a phenol resin is preferable.
- the said epoxy resin may use only 1 type, and may use 2 or more types. Among them, a phenol novolac epoxy resin, an ortho cresol novolac epoxy resin, a biphenyl epoxy resin, a trishydroxyphenylmethane epoxy resin, tetrapheny, since they are rich in reactivity with a phenol resin as a curing agent and excellent in heat resistance. Roll ethane type epoxy resin is preferred.
- phenol resin which can act as a hardening agent of an epoxy resin
- phenol resin which above-mentioned A layer may contain is mentioned.
- the said phenol resin may use only 1 type, and may use 2 or more types.
- the phenol resin is the phenol resin per equivalent of epoxy group in the epoxy resin component.
- the hydroxyl group is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.
- the content ratio of the thermosetting resin is the resin for forming the layer B or layer B from the viewpoint of appropriately curing the layer B.
- the content is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, with respect to the total mass of the composition.
- thermosetting functional group content acrylic resin which the above-mentioned A layer may contain.
- thermosetting functional group content acrylic resin which the above-mentioned A layer may contain.
- glycidyl group-containing acrylic resin and carboxy group-containing acrylic resin are particularly preferable.
- a curing agent together with the thermosetting functional group-containing acrylic resin, and as the curing agent, for example, those exemplified as a crosslinking agent which may be included in a radiation-curable pressure-sensitive adhesive for pressure-sensitive adhesive layer formation described later Can be mentioned.
- the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group
- it is preferable to use a polyphenol compound as a curing agent and, for example, various phenol resins described above can be used.
- the resin composition which forms B layer and B layer may contain the thermosetting catalyst (thermosetting accelerator).
- thermosetting catalyst thermosetting accelerator
- the curing reaction of the resin component can be sufficiently advanced in curing of the resin composition, and the curing reaction rate can be increased.
- thermosetting catalyst what was illustrated as a thermosetting catalyst which the above-mentioned A layer may contain is mentioned.
- the said thermosetting catalyst may contain only 1 type, and may contain 2 or more types.
- the resin composition which forms B layer and B layer may contain the filler.
- the filler By including the filler, physical properties such as the modulus of elasticity of the B layer, the strength at yield, the elongation at break, etc. can be easily adjusted.
- a filler what was illustrated as a filler which the above-mentioned A layer may contain is mentioned.
- the said filler may contain only 1 type, and may contain 2 or more types.
- the filler may have various shapes such as sphere, needle, and flake.
- the average particle diameter of the filler is preferably 10 ⁇ m or less, more preferably 8 ⁇ m or less, and still more preferably 7 ⁇ m or less.
- the average particle diameter is preferably 0.1 ⁇ m or more, and more preferably 0.2 ⁇ m or more. When the average particle diameter is 10 ⁇ m or less, the back contact film which is to be fragmented is more excellent in cleavability.
- the content ratio of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more, based on the total mass of the B layer or the resin composition forming the B layer.
- the content ratio is preferably 60% by mass or less, more preferably 57% by mass or less, and still more preferably 55% by mass or less.
- the resin composition which forms B layer and B layer may contain the other component as needed.
- the flame retardant, the silane coupling agent, the ion trap agent, coloring agents other than a black pigment etc. which were illustrated as other components which the above-mentioned A layer may contain are mentioned.
- the other components may be used alone or in combination of two or more.
- the layer to be the inner layer may have a single layer structure or a multilayer structure.
- the layer to be the inner layer is a single layer B which is an adhesive layer.
- the layer to be the inner layer contains a black pigment as a whole (that is, assuming all the plurality of inner layers as one layer), and the absorbance at a wavelength of 1300 nm is A
- the layer is higher than the layer.
- the outermost layer is excellent in laser marking property when the workpiece is in close contact with the back surface, and the entire inner layer absorbs infrared rays more sufficiently. Can be done, and the infrared shielding property is even better.
- the thickness of the layer A is, for example, 2 to 180 ⁇ m, preferably 4 to 160 ⁇ m.
- the thickness (total thickness) of the layer to be the inner layer is, for example, 2 to 200 ⁇ m, preferably 4 to 160 ⁇ m, more preferably 6 to 100 ⁇ m, and still more preferably 8 to 80 ⁇ m.
- the ratio of the thickness of the layer A to the thickness of the layer to be the inner layer is preferably 1 or more, more preferably 1.5 or more, and still more preferably 2 or more.
- the ratio is, for example, 8 or less.
- the thickness of the back contact film of the present invention is, for example, 2 to 200 ⁇ m, preferably 4 to 160 ⁇ m, more preferably 6 to 100 ⁇ m, and still more preferably 10 to 80 ⁇ m.
- the thickness is 2 ⁇ m or more, the back surface of the workpiece can be protected more firmly. If the thickness is 200 ⁇ m or less, the workpiece after close contact can be made thinner.
- the back contact film of the present invention comprises a dicing tape having a laminated structure including a substrate and a pressure sensitive adhesive layer, and the back contact film of the present invention which is in close contact with the pressure sensitive adhesive layer of the dicing tape.
- it may be used as a dicing tape-integrated semiconductor back contact film (sometimes referred to as "dicing tape integrated back contact film").
- the said dicing tape integrated type back contact film may be called “the dicing tape integrated type back contact film of this invention.”
- the dicing tape-integrated back contact film 1 shown in FIG. 2 is disposed on the separator 30.
- the dicing tape-integrated back contact film 1 can be used in the process for obtaining a semiconductor chip with a film of a chip equivalent size for forming a back contact film of a semiconductor chip, and the back contact film 10 of the present invention and It has a laminated structure including the dicing tape 20.
- the substrate in the dicing tape is an element functioning as a support in the dicing tape and the dicing tape-integrated back contact film.
- a base material a plastic base material (especially plastic film) is mentioned, for example.
- the substrate may be a single layer, or a laminate of similar or different substrates.
- the resin constituting the plastic base examples include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene , Polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resins such as butene copolymer, ethylene-hexene copolymer; polyurethane; polyester such as polyethylene terephthalate (PET), polyethylene naphthalate, polybutylene terephthalate (PBT); polycarbonate; polyimide Riete ether ketone; polyetherimides; aramid, polyamide such as wholly aromatic polyamide; polyphenyl sulfide; fluorine
- the substrate contains ethylene-vinyl acetate copolymer or polyvinyl chloride as a main component.
- the main component of a base material it is set as the component which occupies the largest mass ratio in a structural component.
- the said resin may use only 1 type and may use 2 or more types.
- the substrate preferably has radiation transparency.
- the plastic film When the substrate is a plastic film, the plastic film may be non-oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film can be thermally shrunk in the at least one direction.
- the substrate In order for the substrate and the dicing tape to have isotropic heat shrinkability, the substrate is preferably a biaxially oriented film.
- the plastic film oriented in at least one direction can be obtained by stretching a non-stretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.).
- the base material and the dicing tape preferably have a thermal contraction rate of 1 to 30%, more preferably 2 to 25%, and further preferably 1 to 30% in a heat treatment test performed under conditions of a heating temperature of 100 ° C. and a heating time treatment of 60 seconds. It is preferably 3 to 20%, particularly preferably 5 to 20%.
- the heat shrinkage rate is preferably a heat shrinkage rate in at least one direction of the MD direction and the TD direction.
- the surface on the pressure-sensitive adhesive layer side of the substrate is, for example, corona discharge treatment, plasma treatment, sand mat processing, ozone exposure treatment, flame exposure treatment, high-piezoelectric shock treatment, for the purpose of enhancing adhesion and retention with the pressure-sensitive adhesive layer.
- Physical treatments such as exposure treatment and ionizing radiation treatment; chemical treatments such as chromic acid treatment; and surface treatments such as easy adhesion treatment with a coating agent (primer) may be applied.
- the thickness of the substrate is preferably 40 ⁇ m or more, more preferably 50 ⁇ m or more, and still more preferably from the viewpoint of securing strength for the substrate to function as a support in the dicing tape and dicing tape-integrated back contact film. Is 55 ⁇ m or more, particularly preferably 60 ⁇ m or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape and the dicing tape-integrated back contact film, the thickness of the substrate is preferably 200 ⁇ m or less, more preferably 180 ⁇ m or less, and still more preferably 150 ⁇ m or less. is there.
- the pressure-sensitive adhesive layer in the dicing tape is a pressure-sensitive adhesive layer (pressure-sensitive adhesive type pressure-sensitive adhesive layer) capable of intentionally reducing the adhesive force by the action from the outside in the use process of the dicing tape-integrated back contact film. It may be a pressure-sensitive adhesive layer (pressure-sensitive adhesive non-reducing pressure-sensitive adhesive layer) in which the adhesion is hardly or not reduced depending on the external action in the use process of the dicing tape-integrated back contact film. It can select suitably according to the method, conditions, etc. of singulation of the work separated into pieces using dicing tape integrated back contact film.
- the pressure-sensitive adhesive layer may have a single-layer structure or a multi-layer structure.
- the pressure-sensitive adhesive layer When the pressure-sensitive adhesive layer is a pressure-sensitive adhesive type pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer exhibits relatively high adhesion and relatively low adhesion in the manufacturing process and use process of the dicing tape-integrated back contact film. It becomes possible to use properly the state which shows power. For example, when attaching a back contact film to the adhesive layer of the dicing tape in the manufacturing process of the dicing tape integrated back contact film, or when the dicing tape integrated back contact film is used in the dicing step, the adhesive layer is relative While it becomes possible to suppress and prevent lifting of the back contact film from the pressure-sensitive adhesive layer by using a state that exhibits extremely high adhesive strength, thereafter, the semiconductor chip is obtained from the dicing tape with dicing tape integrated back contact film. In the pickup step for pickup, the pickup can be easily performed by reducing the adhesive force of the pressure-sensitive adhesive layer.
- Examples of the pressure-sensitive adhesive that can form such a pressure-sensitive adhesive type pressure-sensitive adhesive layer include a radiation-curable pressure-sensitive adhesive and a heat-foaming type pressure-sensitive adhesive.
- a radiation-curable pressure-sensitive adhesive As an adhesive which forms an adhesive force reduction type adhesive layer, 1 type of adhesive may be used and 2 or more types of adhesive may be used.
- a pressure-sensitive adhesive for example, a pressure-sensitive adhesive of a type which can be cured by irradiation of electron beam, ultraviolet light, ⁇ -ray, ⁇ -ray, ⁇ -ray or X-ray can be used.
- a pressure sensitive adhesive ultraviolet curable pressure sensitive adhesive
- the radiation-curable pressure-sensitive adhesive includes, for example, a base polymer such as an acrylic polymer, and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond.
- a base polymer such as an acrylic polymer
- a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond.
- the said acryl-type polymer is a polymer containing the structural unit derived from an acryl-type monomer (The monomer component which has a (meth) acryloyl group in a molecule
- the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group is mentioned, for example.
- a hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group a hydrocarbon which may have an alkoxy group exemplified as a constituent unit of an acrylic resin which the above-mentioned back contact film may contain A group containing (meth) acrylic acid ester is mentioned.
- the hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more.
- hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group
- 2-ethylhexyl acrylate and lauryl acrylate are preferable.
- all monomer components for forming an acrylic polymer 40 mass% or more is preferable, and, as for the ratio of hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group in these, 60 mass% or more is more preferable.
- the above acrylic polymer is derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylic acid ester which may have the above alkoxy group for the purpose of modifying cohesion and heat resistance etc. May be included.
- the other monomer component the other monomer illustrated as a structural unit of the acrylic resin which the above-mentioned back contact film may contain is mentioned.
- the other monomer components may be used alone or in combination of two or more.
- the above-mentioned acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with a monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton.
- the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, penta Erythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (eg, polyglycidyl (meth) acrylate), polyester The monomer etc.
- the polyfunctional monomers may be used alone or in combination of two or more.
- all monomer components for forming an acrylic polymer 40 mass% or less is preferable, and, as for the ratio of the said polyfunctional monomer in these, 30 mass% or less is more preferable.
- An acrylic polymer is obtained by subjecting one or more monomer components containing an acrylic monomer to polymerization.
- a polymerization method solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like can be mentioned.
- An acrylic polymer can be obtained by polymerizing a raw material monomer for forming it.
- the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.
- the mass average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000. When the mass average molecular weight is 100,000 or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and the contamination of the back contact film, the semiconductor wafer and the like can be further suppressed.
- the pressure-sensitive adhesive layer or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer may contain a crosslinking agent.
- a crosslinking agent for example, when using an acrylic polymer as the base polymer, the acrylic polymer can be crosslinked to further reduce low molecular weight substances in the pressure-sensitive adhesive layer. In addition, the mass average molecular weight of the acrylic polymer can be increased.
- a crosslinking agent a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example.
- the amount thereof used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, with respect to 100 parts by mass of the base polymer.
- Examples of the radiation polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta ( Examples include meta) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates.
- the radiation polymerizable oligomer component examples include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type and polybutadiene type, and those having a molecular weight of about 100 to 30000 are preferable.
- the content of the radiation polymerizable monomer component and the oligomer component in the radiation curable adhesive forming the adhesive layer is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass of the base polymer. It is about a mass part.
- the addition type radiation-curable pressure-sensitive adhesive for example, those disclosed in JP-A-60-196956 may be used.
- the radiation-curable pressure-sensitive adhesive may be an internal radiation-curable resin containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond or the like in the polymer side chain or in the polymer main chain at the polymer main chain terminal.
- a sex adhesive Use of such an internal-type radiation-curable pressure-sensitive adhesive tends to be able to suppress unintended changes in adhesion properties caused by the movement of low molecular weight components in the formed pressure-sensitive adhesive layer.
- An acrylic polymer is preferable as the base polymer contained in the intrinsic type radiation-curable pressure-sensitive adhesive.
- a method for introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer for example, an acrylic polymer was obtained by polymerizing (copolymerizing) a raw material monomer containing a monomer component having a first functional group. Thereafter, a compound having a second functional group capable of reacting with the first functional group and a radiation-polymerizable carbon-carbon double bond, while maintaining the radiation-polymerizable carbon-carbon double bond, is an acrylic polymer Methods for condensation reaction or addition reaction.
- Examples of combinations of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, An isocyanate group, a hydroxy group, etc. are mentioned.
- the combination of a hydroxy group and an isocyanate group and the combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easiness of reaction tracking.
- the first functional group is preferably from the viewpoint of the ease of preparation and availability of an acrylic polymer having a hydroxy group.
- the combination which is a hydroxyl group and whose said 2nd functional group is an isocyanate group is preferable.
- a compound having an isocyanate group and a radioactively polymerizable carbon-carbon double bond that is, as a radiation polymerizable unsaturated functional group-containing isocyanate compound, for example, methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate and the like can be mentioned.
- acrylic polymer having a hydroxy group one comprising a constitutional unit derived from the above-mentioned hydroxy group-containing monomer, or an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether Can be mentioned.
- the radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator.
- the photopolymerization initiator include ⁇ -ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, Examples include camphor quinone, halogenated ketones, acyl phosphinoxides, and acyl phosphonates.
- Examples of the above ⁇ -ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, ⁇ -hydroxy- ⁇ , ⁇ '-dimethylacetophenone, 2-methyl-2-hydroxy Propiophenone, 1-hydroxycyclohexyl phenyl ketone and the like can be mentioned.
- Examples of the above acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2 And -morpholinopropan-1-one and the like.
- benzoin ether compound examples include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether and the like.
- ketal compounds examples include benzyl dimethyl ketal and the like.
- aromatic sulfonyl chloride compounds examples include 2-naphthalene sulfonyl chloride and the like.
- photoactive oxime compounds include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime and the like.
- benzophenone series compounds include benzophenone, benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone and the like.
- thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxanthone, 2,4-diisopropyl Thioxanthone etc. are mentioned.
- the content of the photopolymerization initiator in the radiation curable pressure sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.
- the heat-foaming pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating.
- foaming agent include various inorganic foaming agents and organic foaming agents.
- the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, azides and the like.
- organic foaming agent examples include salt-fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide and barium azodicarboxylate; Hydrazine compounds such as sulfonylhydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide), allylbis (sulfonylhydrazide) and the like; p-toluylenesulfonyl semicarbazide, 4,4'- Semicarbazide compounds such as oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholine-1,2,3,4-thiatriazole; N, N'-dinitrosopentamethylenetetramine, N, N,
- thermally expandable microspheres examples include microspheres having a configuration in which a substance that is easily gasified and expanded by heating is enclosed in a shell.
- the substance which is easily gasified and expanded by the above heating examples include isobutane, propane, pentane and the like.
- Thermally expandable microspheres can be produced by encapsulating a substance which is easily gasified and expanded by heating into a shell-forming substance by a coacervation method, an interfacial polymerization method or the like.
- a substance exhibiting heat melting property or a substance which can be ruptured by the action of thermal expansion of the encapsulating substance can be used.
- Examples of such a substance include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.
- non-adhesive force-reducing pressure-sensitive adhesive layer examples include a pressure-sensitive pressure-sensitive adhesive layer.
- a pressure-sensitive pressure-sensitive adhesive layer a pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive described above in relation to the pressure-sensitive adhesive type pressure-sensitive adhesive layer is cured in advance by radiation irradiation.
- An adhesive layer is included.
- the pressure-sensitive adhesive forming the non-adhesive force-reducing type pressure-sensitive adhesive layer one kind of pressure-sensitive adhesive may be used, or two or more kinds of pressure-sensitive adhesives may be used.
- the whole of the pressure-sensitive adhesive layer may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or a part may be an adhesive force non-reducing type pressure-sensitive adhesive layer.
- the entire pressure-sensitive adhesive layer may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or a specific portion in the pressure-sensitive adhesive layer
- the region, which is the region outside the central region) is the non-adhesive force reducing type adhesive layer, and the other part (for example, the central region which is the divided object of the semiconductor wafer or the adhesion target region of the semiconductor wafer)
- the pressure-sensitive adhesive layer may be an adhesive force-reducible type adhesive layer.
- all the pressure-sensitive adhesive layers in the laminated structure may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or some of the pressure-sensitive adhesive layers in the laminated structure have non-adhesiveness. It may be a reduced pressure-sensitive adhesive layer.
- a pressure-sensitive adhesive layer in a form in which a pressure-sensitive adhesive layer (a non-irradiated radiation-curable pressure-sensitive adhesive layer) formed of a radiation-curable pressure-sensitive adhesive is previously cured by radiation Even if the adhesive force is reduced by the irradiation, the adhesive property due to the contained polymer component is exhibited, and it is possible to exhibit the minimum adhesive force necessary for the adhesive layer of the dicing tape in the dicing step or the like.
- the entire pressure-sensitive adhesive layer may be a radiation-cured radiation-curable pressure-sensitive adhesive layer in the surface spreading direction of the pressure-sensitive adhesive layer.
- the radiation-curable radiation-curable pressure-sensitive adhesive layer may be a radiation-cured pressure-sensitive adhesive layer other than the radiation-exposed radiation-curable pressure-sensitive adhesive layer.
- the "radiation-curable pressure-sensitive adhesive layer” refers to a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, and a radiation-curable non-radiation-curable radiation-curable pressure-sensitive adhesive layer and the adhesive
- the agent layer includes both of the radiation-curable radiation-curable pressure-sensitive adhesive layer after being cured by irradiation.
- a pressure-sensitive adhesive for forming the pressure-sensitive pressure-sensitive adhesive layer known pressure-sensitive pressure-sensitive adhesives can be used, and acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives containing acrylic polymers as base polymers Can.
- the pressure-sensitive adhesive layer contains an acrylic polymer as a pressure-sensitive adhesive
- the acrylic polymer is a polymer containing a constituent unit derived from (meth) acrylic acid ester as the largest constituent unit in mass ratio preferable.
- an acrylic polymer described as an acrylic polymer that can be included in the above-described addition type radiation curable adhesive can be employed.
- the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer or the pressure-sensitive adhesive layer may be any known or commonly used pressure-sensitive adhesive layer such as a crosslinking accelerator, tackifier, anti-aging agent, coloring agent (pigment, dye, etc.)
- the additive used for (1) may be mix
- coloring agent the compound colored by irradiation with radiation is mentioned, for example. When it contains a compound that is colored by irradiation, only the irradiated part can be colored.
- the compound to be colored by the irradiation with radiation is a compound which is colorless or pale before irradiation with radiation but turns to a color by irradiation with radiation, and examples thereof include leuco dyes and the like.
- the amount of the compound to be colored by the above radiation irradiation is not particularly limited and can be appropriately selected.
- the thickness of the pressure-sensitive adhesive layer is not particularly limited, but when the pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, adhesion of the pressure-sensitive adhesive layer to the back contact film before and after radiation curing From the viewpoint of balance, the thickness is preferably about 1 to 50 ⁇ m, more preferably 2 to 30 ⁇ m, and still more preferably 3 to 25 ⁇ m.
- each back contact film of the present invention or the dicing tape-integrated back contact film of the present invention may have a separator on the back contact film surface.
- each back contact film of the present invention or each dicing tape-integrated back contact film may be in the form of a sheet having a separator, or the separator may be elongated and a plurality thereof is provided thereon.
- the back contact film or the plurality of dicing tape-integrated back contact films may be disposed, and the separator may be wound into a roll.
- the separator is an element for covering and protecting the back contact film of the present invention, and is peeled from the sheet when using the back contact film of the present invention or the dicing tape-integrated back contact film of the present invention.
- separator examples include plastic films and papers surface-coated with a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a release agent such as a fluorine-based release agent or a long chain alkyl acrylate release agent.
- PET polyethylene terephthalate
- release agent such as a fluorine-based release agent or a long chain alkyl acrylate release agent.
- the thickness of the separator is, for example, 10 to 200 ⁇ m, preferably 15 to 150 ⁇ m, and more preferably 20 to 100 ⁇ m.
- the thickness is 10 ⁇ m or more, it is difficult to be broken due to cutting at the time of processing of the separator.
- the thickness is 200 ⁇ m or less, the dicing tape-integrated back contact film is more easily peeled off from the separator at the time of bonding to the substrate and the frame.
- the back contact film 10 which is one embodiment of the back contact film of the present invention is manufactured, for example, as follows.
- the adhesive layer (B layer) 11 and the laser mark layer (A layer) 12 are separately prepared.
- the adhesive layer 11 applies a resin composition (adhesive composition) for forming the adhesive layer 11 on a separator to form a resin composition layer, and then performs desolvation and curing by heating to form a resin composition. It can be produced by solidifying the product layer.
- the heating temperature is, for example, 90 to 150 ° C.
- the heating time is, for example, 1 to 2 minutes.
- a coating method of a resin composition roll coating, screen coating, gravure coating etc. are mentioned, for example.
- the laser mark layer 12 applies a resin composition for forming the laser mark layer 12 on the separator to form a resin composition layer, and then performs desolvation and curing by heating to solidify the resin composition layer. It can be produced by In the preparation of the laser mark layer 12, the heating temperature is, for example, 90 to 160 ° C., and the heating time is, for example, 2 to 4 minutes. As described above, the adhesive layer 11 and the laser mark layer 12 can be produced in a form in which each is accompanied by a separator.
- the dicing tape integrated back contact film 1 which is one embodiment of the dicing tape integrated back adhesion film of the present invention is manufactured, for example, as follows.
- the dicing tape 20 of the dicing tape-integrated back contact film 1 shown in FIG. 2 can be produced by providing the adhesive layer 22 on the prepared base 21.
- the base material 21 made of resin can be obtained by forming a film by a known or conventional film forming method.
- the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, a dry lamination method and the like.
- the substrate 21 is subjected to surface treatment as required.
- the composition is applied on a substrate 21 or a separator to form a pressure-sensitive adhesive composition layer.
- the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating.
- the solvent is removed as necessary by heating, and a crosslinking reaction is caused as necessary.
- the heating temperature is, for example, 80 to 150 ° C.
- the heating time is, for example, 0.5 to 5 minutes.
- the pressure-sensitive adhesive layer 22 When the pressure-sensitive adhesive layer 22 is formed on a separator, the pressure-sensitive adhesive layer 22 with the separator is attached to the substrate 21 and then the target plane projection shape (for example, the back contact film 10 has a similar shape Punching is performed so as to obtain a shape and a planar projected area, and then the separator is peeled off. Thereby, the dicing tape 20 which has a laminated structure of the base material 21 and the adhesive layer 22 is produced.
- the target plane projection shape for example, the back contact film 10 has a similar shape Punching is performed so as to obtain a shape and a planar projected area, and then the separator is peeled off.
- the laser mark layer 12 side of the back contact film 10 obtained above is bonded to the adhesive layer 22 side of the dicing tape 20.
- the bonding temperature is, for example, 10 to 50 ° C.
- the bonding pressure linear pressure
- the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet light before the bonding, or after the bonding
- the adhesive layer 22 may be irradiated with radiation such as ultraviolet light from the side.
- the adhesive layer 22 is cured in the process of using the dicing tape-integrated back contact film 1 Is possible).
- the ultraviolet irradiation dose for curing the pressure-sensitive adhesive layer 22 is, for example, 50 to 500 mJ / cm 2 .
- the area (irradiated area R) where the irradiation as the adhesive force reducing measure of the pressure-sensitive adhesive layer 22 is performed in the dicing tape-integrated back-adhesion film 1 is, for example, as shown in FIG. It is an area
- the back contact film 10 of the present invention shown in FIG. 1 and the dicing tape integrated back contact film 1 shown in FIG. 2 can be produced.
- the adhesive layer 11 is an inner layer
- the laser mark layer 12 is an outermost layer.
- a semiconductor device can be manufactured using the dicing tape-integrated back contact film of the present invention. Specifically, the step of sticking the back surface of the work to the back adhesion film side (especially the adhesive layer side) in the dicing tape-integrated back adhesion film of the present invention (sticking step) and cutting the object including at least the work
- the semiconductor device can be manufactured by the manufacturing method including the step of obtaining the singulated semiconductor chip (dicing step).
- 3 to 6 show steps in a method of manufacturing a semiconductor device using the dicing tape-integrated back contact film 1 shown in FIG.
- a semiconductor wafer and a plurality of semiconductor chips have their back surfaces and / or side surfaces made of resin. And the like. Then, for example, as shown in FIG. 3 (a), the semiconductor wafer 40 held by the wafer processing tape T1 is attached to the back contact film 10 (particularly the adhesive layer 11) of the dicing tape integrated back contact film 1 of the present invention. Stick to). Bumps (not shown) for flip chip mounting are provided on the surface of the semiconductor wafer 40. Thereafter, as shown in FIG. 3B, the wafer processing tape T1 is peeled off from the semiconductor wafer 40.
- thermosetting adhesive layer When the back contact film of the present invention has a thermosetting adhesive layer, it is preferable to have a step (heat curing step) of heat curing the adhesive layer in the back contact film after the sticking step.
- heat curing step heat treatment for heat curing the adhesive layer 11 is performed.
- the heating temperature is preferably 80 to 200 ° C., more preferably 100 to 150 ° C.
- the heating time is preferably 0.5 to 5 hours, more preferably 1 to 3 hours. Specifically, the heat treatment is performed, for example, at 120 ° C. for 2 hours.
- the adhesion between the back adhesion film 10 of the present invention and the semiconductor wafer 40 of the dicing tape integrated back adhesion film 1 is enhanced by the heat curing of the adhesive layer 11, and the dicing tape integrated back adhesion film 1 and The semiconductor wafer fixed holding power of the back contact film 10 of the present invention is enhanced.
- baking may be performed, for example, in the range of 50 to 100 ° C. for several hours, whereby the wettability of the adhesive layer interface is improved. And the semiconductor wafer fixed holding power is increased.
- the method for manufacturing a semiconductor device preferably includes a step (laser marking step) of laser marking by irradiating a laser from the substrate side of the dicing tape to the laser mark layer.
- a laser marking step of laser marking by irradiating a laser from the substrate side of the dicing tape to the laser mark layer.
- laser marking step it is preferable to perform a laser marking process after the said thermosetting process.
- laser marking step for example, laser marking is performed by irradiating a laser from the side of the base 21 of the dicing tape 20 to the laser mark layer 12.
- various information such as character information and graphic information can be imprinted on each semiconductor chip.
- a gas laser and a solid state laser are mentioned, for example.
- the gas laser include a carbon dioxide gas laser (CO 2 laser) and an excimer laser.
- CO 2 laser carbon dioxide gas laser
- excimer laser As a solid state laser, Nd: YAG laser is mentioned, for example.
- a frame (dicing frame) 51 for pressing and fixing the dicing tape is stuck on the adhesive layer 22 in the dicing tape integrated back contact film 1 and holding of the dicing apparatus After being held by the tool 52, cutting with a dicing blade provided in the dicing apparatus is performed.
- the cut portion is schematically represented by a thick line.
- the semiconductor wafer is singulated into semiconductor chips 41, and the back contact film 10 of the present invention of the dicing tape integrated back contact film 1 is cut into small pieces of film 10 '. Thereby, the semiconductor chip 41 with the film 10 ′, ie, the semiconductor chip 41 with the film 10 ′ is obtained.
- the method for manufacturing a semiconductor device may have a step of irradiating the pressure-sensitive adhesive layer from the substrate side with radiation (radiation irradiation step).
- the pressure-sensitive adhesive layer of the dicing tape is a layer formed of a radiation-curable pressure-sensitive adhesive
- the above-mentioned radiation irradiation in the production process of the dicing tape-integrated back contact film is replaced.
- the adhesive layer may be irradiated with radiation such as ultraviolet light from the side of the substrate.
- the irradiation dose is, for example, 50 to 500 mJ / cm 2 .
- the method of manufacturing a semiconductor device includes a step of picking up a semiconductor chip with a film (pickup step).
- the pick-up step is, for example, a cleaning step of cleaning the semiconductor chip 41 side of the dicing tape 20 with the semiconductor chip 41 with the film 10 ′ using a cleaning liquid such as water, or a separation distance between the semiconductor chips 41 with the film 10 ′.
- An expanding step for expanding may be performed after passing through if necessary. For example, as shown in FIG. 5, the semiconductor chip 41 with the film 10 ′ is picked up from the dicing tape 20.
- the push-up speed of the pin member 53 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 53 is, for example, 50 to 3000 ⁇ m.
- the method of manufacturing the semiconductor device preferably includes a step (flip chip step) of flip chip mounting the semiconductor chip 41 with a film after the pickup step.
- the semiconductor chip 41 with the film 10 ′ is flip-chip mounted on the mounting substrate 61.
- the mounting substrate 61 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring substrate.
- the semiconductor chip 41 is electrically connected to the mounting substrate 61 via the bumps 62 by flip chip mounting.
- a substrate (electrode pad) (not shown) that the semiconductor chip 41 has on the circuit formation side and a terminal portion (not shown) that the mounting substrate 61 has are electrically connected via the bumps 62.
- Ru The bumps 62 are, for example, solder bumps.
- a thermosetting underfill agent 63 is interposed between the chip 41 and the mounting substrate 61.
- a semiconductor device can be manufactured using the dicing tape-integrated back contact film of the present invention.
- Example 1 (Preparation of laser mark layer) 90 parts by mass of acrylic resin (trade name “Teisan Resin SG-P3" manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name “SO-25R", average particle diameter: 0.5 ⁇ m, manufactured by Admatex Co., Ltd.
- the resin composition was applied on a silicone release-treated surface of a PET separator (50 ⁇ m in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer.
- the composition layer was heated at 130 ° C. for 2 minutes to desolvate and thermally cure, and a 17 ⁇ m-thick laser mark layer (thermally cured layer) was produced on the PET separator.
- the resin composition was applied on a silicone release-treated surface of a PET separator (50 ⁇ m in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer.
- the composition layer was subjected to heating for 2 minutes at 130 ° C. to desolvate, and an adhesive layer having a thickness of 8 ⁇ m was produced on the PET separator.
- the laser mark layer on the PET separator produced as described above and the adhesive layer on the PET separator were bonded together using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, a back contact film of Example 1 was produced.
- the laser mark layer is a layer which is the outermost layer when the semiconductor is in close contact with the back surface
- the adhesive layer is a layer which is an inner layer.
- Comparative Example 1 A back contact film of Comparative Example 1 was produced in the same manner as in Example 1 except that the blending amount of the black pigment in the adhesive layer was changed as shown in Table 1.
- Comparative example 2 A back contact film of Comparative Example 2 was prepared in the same manner as Example 1, except that the blending amount of the black pigment in the laser mark layer and the blending amount of the black pigment in the adhesive layer were changed as shown in Table 1, respectively. did.
- Comparative example 3 90 parts by mass of acrylic resin (trade name “Teisan Resin SG-P3” manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name “SO-25R", average particle diameter: 0.5 ⁇ m, made by Admatex Co., Ltd.
- the resin composition was applied on a silicone release-treated surface of a PET separator (50 ⁇ m in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer.
- the composition layer was heated at 130 ° C. for 2 minutes to desolvate and thermally cure, and a back contact film (thermally cured) of Comparative Example 3 with a thickness of 25 ⁇ m was produced on the PET separator.
- Comparative example 4 90 parts by mass of acrylic resin (trade name “Teisan Resin SG-P3” manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name “SO-25R", average particle diameter: 0.5 ⁇ m, manufactured by Admatex Co., Ltd.
- the resin composition was applied on a silicone release-treated surface of a PET separator (50 ⁇ m in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer.
- the composition layer was heated at 130 ° C. for 2 minutes to desolvate and thermally cure, and a back contact film (thermally cured) of Comparative Example 4 with a thickness of 25 ⁇ m was produced on the PET separator.
- the back contact film obtained in the example and the comparative example is bonded to a dicing tape to prepare a dicing tape integrated back contact film, and the back contact film is formed by a green laser with a wavelength of 532 nm through the dicing tape. I printed it. Then, if the printed characters satisfy both criteria of easy visibility (contrast is clear) in dark field observation using a microscope and that no bubbles are generated, ⁇ , at least one of them The case where the criteria were not met was evaluated as x.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Dicing (AREA)
- Laminated Bodies (AREA)
Abstract
Provided is a semiconductor back surface adhering film which has excellent laser markability and excellent infrared shielding properties. A semiconductor back surface adhering film according to the present invention is closely adhered to the back surface of a semiconductor when in use, and comprises: a layer A which contains a black pigment and serves as the outermost layer when closely adhered to the back surface of the semiconductor; and a layer B which contains a black pigment and has a higher absorbance at the wavelength of 1,300 nm than the layer A, while serving as an inner layer that is positioned between the outermost layer and a semiconductor element when closely adhered to the back surface of the semiconductor.
Description
本発明は、半導体背面密着フィルムに関する。より詳細には、本発明は、半導体装置の製造過程で使用することができる半導体背面密着フィルムに関する。
The present invention relates to a semiconductor back contact film. More particularly, the present invention relates to a semiconductor back contact film that can be used in the process of manufacturing a semiconductor device.
近年、半導体チップ等の半導体素子が基板上にフリップチップボンディングにより実装されたフリップチップ型の半導体装置が広く利用されている。フリップチップ型の半導体装置では、半導体素子の損傷等を防止するために、半導体素子の裏面に保護膜を形成するためのフィルムとして、半導体背面密着フィルムが用いられることがある(特許文献1、2参照)。
In recent years, a flip chip type semiconductor device in which semiconductor elements such as semiconductor chips are mounted on a substrate by flip chip bonding is widely used. In a flip chip type semiconductor device, a semiconductor back contact film may be used as a film for forming a protective film on the back surface of the semiconductor element in order to prevent damage or the like of the semiconductor element (Patent Documents 1 and 2) reference).
従来の半導体背面密着フィルムは、通常、レーザーマーキングにより刻印情報を付与することが可能なように着色剤が配合されており、またこれにより遮光性を有する。ところで、近年、シリコン層の薄層化が進んでいる。これに伴い、半導体背面密着フィルムも薄膜化が求められている。しかしながら、シリコンは薄層化すると赤外線から可視光まで透過する光の波長が広がるという問題があった。また、半導体背面密着フィルムにおいては、レーザーマーキングのために使用する可視光吸収を有する着色剤が多くの場合は近赤外に吸収を有しないものも多く、赤外線を透過する他、薄膜化に伴い遮光性が低下するという問題があった。半導体背面密着フィルムの遮光性が劣ると、光が透過しやすくなるため、光が透過することにより半導体の回路面でノイズ等の悪影響を及ぼしたり、赤外線顕微鏡等を用いることにより回路面が見えてしまい秘密性が維持できなくなることがあった。
The conventional semiconductor back contact film usually contains a coloring agent so as to be able to give imprint information by laser marking, and thereby has a light shielding property. By the way, in recent years, thinning of the silicon layer is in progress. Along with this, thinning of the semiconductor back contact film is also required. However, when silicon is thinned, there is a problem that the wavelength of light transmitted from infrared to visible light is expanded. In addition, in the case of a semiconductor back contact film, in many cases, the coloring agent having visible light absorption used for laser marking is in many cases not having absorption in the near infrared, and in addition to transmitting infrared light, along with thinning of the film. There is a problem that the light shielding property is reduced. When the light shielding property of the back contact film on the semiconductor is inferior, light is easily transmitted. Therefore, when light is transmitted, the circuit surface of the semiconductor adversely affects noise and the like, or the circuit surface can be viewed by using an infrared microscope or the like. In some cases, confidentiality can not be maintained.
本発明は上記の問題に鑑みてなされたものであり、その目的は、レーザーマーキング性及び赤外線遮蔽性に優れる半導体背面密着フィルムを提供することにある。
The present invention has been made in view of the above problems, and an object thereof is to provide a semiconductor back contact film excellent in laser marking properties and infrared shielding properties.
本発明者らは、上記目的を達成するため鋭意検討した結果、黒色顔料を含有し、半導体背面密着時において最表層となるA層と、黒色顔料を含有し且つ波長1300nmにおける吸光度がA層よりも高く、半導体背面密着時において最表層と半導体素子の間に位置する内層となるB層と、を有する半導体背面密着フィルムによれば、レーザーマーキング性及び赤外線遮蔽性に優れることを見出した。本発明は、これらの知見に基づいて完成されたものである。
The present inventors intensively studied to achieve the above object, and as a result, they contain a black pigment, and an A layer which becomes the outermost layer at the time of close contact with the back surface of the semiconductor and a black pigment and have an absorbance of 1300 nm It was also found that according to the semiconductor back contact film having the B layer which is high and which is the inner layer located between the outermost layer and the semiconductor element when the semiconductor back contact is in close contact, the laser marking property and the infrared shielding property are excellent. The present invention has been completed based on these findings.
すなわち、本発明は、半導体の背面に密着して用いる半導体背面密着フィルムであって、黒色顔料を含有し、半導体背面密着時において最表層となるA層と、黒色顔料を含有し且つ波長1300nmにおける吸光度がA層よりも高く、半導体背面密着時において最表層と半導体素子の間に位置する内層となるB層と、を有する半導体背面密着フィルムを提供する。このような構成の半導体背面密着フィルムは、半導体装置の製造過程で使用することができる。
That is, the present invention is a semiconductor back contact film used in close contact with the back surface of the semiconductor, which contains a black pigment and contains an A layer which becomes the outermost layer at the time of back contact with the semiconductor and a black pigment and at a wavelength of 1300 nm. Provided is a semiconductor back contact film having an absorbance higher than that of the A layer, and a B layer serving as an inner layer located between the outermost layer and the semiconductor element when in close contact with the semiconductor back surface. The semiconductor back contact film having such a configuration can be used in the process of manufacturing a semiconductor device.
本発明の半導体背面密着フィルムは、黒色顔料を含有し、使用時、すなわち半導体背面密着フィルムが半導体背面に密着した状態で最表層となる層(A層)と、黒色顔料を含有し使用時に最表層と半導体素子との間に位置する層(内層)となる層(B層)とを有し、B層の波長1300nmにおける吸光度がA層の波長1300nmにおける吸光度よりも高い。このような構成を有する本発明の半導体背面密着フィルムは、半導体背面密着時において最表層がレーザーマーキング性に優れ、且つ、内層が赤外線を充分に吸収することができ、赤外線遮蔽性に優れる。
The semiconductor back contact film of the present invention contains a black pigment, and in use, that is, a layer (A layer) which becomes the outermost layer when the semiconductor back contact film is in close contact with the semiconductor back, and a black pigment when used It has a layer (B layer) to be a layer (inner layer) positioned between the surface layer and the semiconductor element, and the absorbance of the B layer at a wavelength of 1300 nm is higher than the absorbance of the A layer at a wavelength of 1300 nm. In the semiconductor back contact film of the present invention having such a configuration, the outermost layer is excellent in laser marking property when the semiconductor back contact is in close contact, and the inner layer can sufficiently absorb infrared rays, and is excellent in infrared ray shielding properties.
本発明の半導体背面密着フィルムにおいて、B層中の黒色顔料の含有割合は、A層中の黒色顔料の含有割合よりも高いことが好ましい。このような構成を有する本発明の半導体背面密着フィルムは、B層の波長1300nmにおける吸光度がA層の波長1300nmにおける吸光度よりも高くなりやすい。
In the semiconductor back contact film of the present invention, the content ratio of the black pigment in the B layer is preferably higher than the content ratio of the black pigment in the A layer. In the semiconductor back contact film of the present invention having such a configuration, the absorbance of the B layer at a wavelength of 1300 nm tends to be higher than the absorbance of the A layer at a wavelength of 1300 nm.
本発明の半導体背面密着フィルムは、半導体背面密着時において内層となる層が、全体として、黒色顔料を含有し且つ波長1300nmにおける吸光度がA層よりも高い層であることが好ましい。このような構成を有する本発明の半導体背面密着フィルムは、半導体背面密着時において最表層がレーザーマーキング性に優れ、且つ、内層全体で赤外線をより充分に吸収することができ、赤外線遮蔽性によりいっそう優れる。
It is preferable that the layer which becomes an inner layer at the time of semiconductor back surface adhesion of the semiconductor back adhesion film of this invention is a layer which contains a black pigment as a whole and whose absorbance in wavelength 1300nm is higher than A layer. In the semiconductor back contact film of the present invention having such a configuration, the outermost layer is excellent in laser marking property when the semiconductor back contact is in contact, and the entire inner layer can absorb infrared rays more sufficiently. Excellent.
本発明の半導体背面密着フィルムにおいて、A層の波長1300nmにおける吸光度に対するB層の波長1300nmにおける吸光度の比[B層/A層]は1.2~15であることが好ましい。このような構成を有する本発明の半導体背面密着フィルムは、A層とB層のコントラストの差がより大きくなり、本発明の半導体背面密着フィルムのレーザーマーキング性と赤外線遮蔽性によりいっそう優れる。
In the semiconductor back contact film of the present invention, the ratio [B layer / A layer] of the absorbance at a wavelength 1300 nm of the layer B to the absorbance at a wavelength 1300 nm of the layer A is preferably 1.2 to 15. The semiconductor back contact film of the present invention having such a constitution has a larger difference in contrast between the A layer and the B layer, and is further excellent in the laser marking property and the infrared ray shielding property of the semiconductor back contact film of the present invention.
本発明の半導体背面密着フィルムにおいて、A層及びB層それぞれが上記黒色顔料としてカーボンブラックを含むことが好ましい。このような構成を有する本発明の半導体背面密着フィルムは、黒色顔料の含有割合の調整によりA層とB層の吸光度を容易に調整することができ、容易に本発明の背面密着フィルムを得ることができる。
In the semiconductor back contact film of the present invention, each of the layer A and the layer B preferably contains carbon black as the black pigment. The semiconductor back contact film of the present invention having such a configuration can easily adjust the absorbance of the A layer and the B layer by adjusting the content ratio of the black pigment, and the back contact film of the present invention can be easily obtained. Can.
本発明の半導体背面密着フィルムにおいて、A層中の黒色顔料の含有割合は0.05~5質量%であることが好ましい。このような構成を有することにより、レーザーマーキング性により優れる。また、光の過度吸収による光熱変換の上昇に起因するバインダー樹脂など有機成分の昇華を抑制し、文字の荒れを抑制することができる。また、ダイシングテープ一体型背面密着フィルムにおいては層間で気泡が発生しにくい。
In the semiconductor back contact film of the present invention, the content ratio of the black pigment in the layer A is preferably 0.05 to 5% by mass. By having such a configuration, the laser marking property is more excellent. In addition, sublimation of organic components such as a binder resin resulting from an increase in light-to-heat conversion due to excessive absorption of light can be suppressed, and character roughening can be suppressed. Further, in the dicing tape-integrated back contact film, air bubbles are unlikely to be generated between the layers.
本発明の半導体背面密着フィルムにおいて、B層中の黒色顔料の含有割合は0.5~10質量%であることが好ましい。このような構成を有することにより、B層の吸光度を高いものとすることができ、赤外線遮蔽性により優れ、ワーク背面への密着性により優れる。
In the semiconductor back contact film of the present invention, the content ratio of the black pigment in the layer B is preferably 0.5 to 10% by mass. By having such a configuration, the absorbance of the B layer can be made high, and the infrared ray shielding property is excellent, and the adhesion to the back surface of the work is excellent.
本発明の半導体背面密着フィルムは、レーザーマーキング性及び赤外線遮蔽性に優れる。このため、本発明の半導体背面密着フィルムを用いることにより、半導体ウエハが薄層化された場合であっても、レーザーマーキングを鮮明に行うことができ、なおかつ、赤外線を照射された際に半導体の回路面に悪影響を及ぼしたり、回路面が見えてしまうことを抑制することができる。
The semiconductor back contact film of the present invention is excellent in laser marking properties and infrared shielding properties. For this reason, by using the semiconductor back contact film of the present invention, even when the semiconductor wafer is thinned, laser marking can be performed clearly, and at the same time the semiconductor is irradiated with infrared rays. It is possible to suppress the adverse effect on the circuit surface or the visibility of the circuit surface.
[半導体背面密着フィルム]
本発明の半導体背面密着フィルム(単に「背面密着フィルム」と称する場合がある)は、半導体の背面に密着して用いるフィルムであり、半導体チップの背面(いわゆる裏面)に保護膜を形成するためのフィルム(半導体裏面保護フィルム)を含む。そして、本発明の背面密着フィルムは、黒色顔料を含有し、半導体背面密着時において最表層となる層と、黒色顔料を含有し且つ波長1300nmにおける吸光度が上記最表層となる層よりも高く、半導体背面密着時において最表層と半導体素子の間に位置する内層となる層と、を少なくとも有する。なお、本明細書において、黒色顔料を含有し、本発明の背面密着フィルムの使用時(すなわち半導体背面密着フィルムが半導体背面に密着した状態)において上記最表層となる層を「A層」と称する場合があり、黒色顔料を含有し、使用時において上記内層となる層を「B層」と称する場合がある。 [Semiconductor back contact film]
The semiconductor back contact film of the present invention (sometimes referred to simply as "back contact film") is a film used in close contact with the back of a semiconductor, and is for forming a protective film on the back (so-called back) of a semiconductor chip. A film (semiconductor back surface protection film) is included. The back contact film of the present invention contains a black pigment, a layer which becomes the outermost layer at the time of close contact with the semiconductor, and a layer which contains the black pigment and whose absorbance at a wavelength of 1300 nm is higher than the layer which is the above outermost layer It has at least a layer to be an inner layer located between the outermost layer and the semiconductor element at the time of close contact with the back surface. In the present specification, a layer which contains a black pigment and which is the outermost layer when the back contact film of the present invention is used (that is, the semiconductor back contact film is in close contact with the back of the semiconductor) is referred to as "A layer". In some cases, a layer that contains a black pigment and becomes the above inner layer at the time of use may be referred to as "B layer".
本発明の半導体背面密着フィルム(単に「背面密着フィルム」と称する場合がある)は、半導体の背面に密着して用いるフィルムであり、半導体チップの背面(いわゆる裏面)に保護膜を形成するためのフィルム(半導体裏面保護フィルム)を含む。そして、本発明の背面密着フィルムは、黒色顔料を含有し、半導体背面密着時において最表層となる層と、黒色顔料を含有し且つ波長1300nmにおける吸光度が上記最表層となる層よりも高く、半導体背面密着時において最表層と半導体素子の間に位置する内層となる層と、を少なくとも有する。なお、本明細書において、黒色顔料を含有し、本発明の背面密着フィルムの使用時(すなわち半導体背面密着フィルムが半導体背面に密着した状態)において上記最表層となる層を「A層」と称する場合があり、黒色顔料を含有し、使用時において上記内層となる層を「B層」と称する場合がある。 [Semiconductor back contact film]
The semiconductor back contact film of the present invention (sometimes referred to simply as "back contact film") is a film used in close contact with the back of a semiconductor, and is for forming a protective film on the back (so-called back) of a semiconductor chip. A film (semiconductor back surface protection film) is included. The back contact film of the present invention contains a black pigment, a layer which becomes the outermost layer at the time of close contact with the semiconductor, and a layer which contains the black pigment and whose absorbance at a wavelength of 1300 nm is higher than the layer which is the above outermost layer It has at least a layer to be an inner layer located between the outermost layer and the semiconductor element at the time of close contact with the back surface. In the present specification, a layer which contains a black pigment and which is the outermost layer when the back contact film of the present invention is used (that is, the semiconductor back contact film is in close contact with the back of the semiconductor) is referred to as "A layer". In some cases, a layer that contains a black pigment and becomes the above inner layer at the time of use may be referred to as "B layer".
なお、本明細書において、半導体(ワーク)の「表面」とはワークのフリップチップ実装するためのバンプが形成されている面をいい、「背面」とは表面の反対側、すなわちバンプが形成されていない面をいうものとする。また、本明細書において、「背面密着フィルム」とは、半導体装置に実装された後もワークの背面に密着しているフィルムであり、後述のダイシングテープやセパレータ等の半導体装置の製造過程で剥離される層は含まれない。このため、上記「最表層」とは、背面密着フィルムにおける最表層をいい、後述のダイシングテープやセパレータ等の半導体装置の製造過程で剥離される層を最表層上に有していてもよい。
In the present specification, the "surface" of a semiconductor (work) refers to the surface on which bumps for flip chip mounting of the work are formed, and the "back" is the opposite side of the surface, that is, the bumps are formed. It means the side that is not Moreover, in the present specification, the “back contact film” is a film which is in close contact with the back of the work even after being mounted on the semiconductor device, and peeled off in the process of manufacturing semiconductor devices such as dicing tapes and separators described later. Layers are not included. Therefore, the above-mentioned "uppermost layer" refers to the outermost layer in the back contact film, and may have a layer to be peeled off in the process of manufacturing a semiconductor device such as a dicing tape or a separator described later.
本発明の背面密着フィルムの一実施形態を図1に示す。図1に示すように、本発明の背面密着フィルム10は、セパレータ30上に配置されている。本発明の背面密着フィルム10は、接着剤層11とレーザーマーク層12を含む多層構造を有し、レーザーマーク層12がセパレータ30に剥離可能に密着している。なお、図1に示すレーザーマーク層12は、フィルム10のワーク背面密着時において最表面となる層(A層)に相当し、接着剤層11は、フィルム10のワーク背面密着時において最表層と半導体素子の間に位置する内層となる層(B層)に相当する。なお、図1において、接着剤層11とレーザーマーク層12は、逆の位置関係(すなわち、接着剤層11がセパレータ30に剥離可能に密着している態様)であってもよい。接着剤層11とレーザーマーク層12が図1に示す位置関係である場合、本発明の背面密着フィルム10をワーク背面に貼着し熱硬化させて使用することができる。一方、接着剤層11とレーザーマーク層12の位置関係が図1に示すものとは逆である場合、後述のダイシングテープ一体型背面密着フィルムを作製するために好ましく使用することができる。
One embodiment of the back contact film of the present invention is shown in FIG. As shown in FIG. 1, the back contact film 10 of the present invention is disposed on the separator 30. The back contact film 10 of the present invention has a multilayer structure including the adhesive layer 11 and the laser mark layer 12, and the laser mark layer 12 is in close contact with the separator 30 in a peelable manner. The laser mark layer 12 shown in FIG. 1 corresponds to the layer (layer A) which is the outermost surface when the workpiece 10 is in close contact with the film 10, and the adhesive layer 11 is the outermost layer when the workpiece 10 is in close contact with the film 10. It corresponds to a layer (B layer) to be an inner layer located between semiconductor elements. In FIG. 1, the adhesive layer 11 and the laser mark layer 12 may have the reverse positional relationship (that is, an aspect in which the adhesive layer 11 is in close contact with the separator 30 so as to be peelable). When the adhesive layer 11 and the laser mark layer 12 have the positional relationship shown in FIG. 1, the back contact film 10 of the present invention can be used by being attached to the back of the work and heat cured. On the other hand, when the positional relationship between the adhesive layer 11 and the laser mark layer 12 is opposite to that shown in FIG. 1, it can be preferably used to produce a dicing tape-integrated back contact film described later.
背面密着フィルム10は、例えば、120℃で2時間の加熱処理によって、接着剤層11は熱硬化する一方で、レーザーマーク層12は実質的には熱硬化しないという積層構造や、120℃で2時間の加熱処理によって、接着剤層11及びレーザーマーク層12の両方が実質的には熱硬化しないという熱硬化レスの積層構造、接着剤層11が放射線照射によって硬化する一方で、レーザーマーク層12は実質的には熱硬化しないという熱硬化レスの積層構造等をとることができる。なお、背面密着フィルム10において120℃で2時間の加熱処理によって実質的には熱硬化しない層には、既に硬化した熱硬化型層が含まれる。
In the back contact film 10, for example, the adhesive layer 11 is thermally cured by heat treatment at 120 ° C. for 2 hours, while the laser mark layer 12 is not substantially thermally cured, or 2 at 120 ° C. While the adhesive layer 11 is cured by radiation irradiation, while the adhesive layer 11 is cured by radiation, while the adhesive layer 11 is cured by radiation, while the adhesive layer 11 and the laser mark layer 12 are cured. Can be, for example, a thermosetting-less laminated structure in which the thermosetting does not substantially cure. The layer not thermally cured substantially by the heat treatment at 120 ° C. for 2 hours in the back contact film 10 includes a thermosetting layer that has already been cured.
本発明の背面密着フィルムでは、B層の波長1300nmにおける吸光度がA層の波長1300nmにおける吸光度よりも高い。A層の波長1300nmにおける吸光度に対するB層の波長1300nmにおける吸光度の比[B層/A層]は、特に限定されないが、1.2以上であることが好ましく、より好ましくは1.5以上、さらに好ましくは1.8以上である。上記比が1.2以上であると、A層とB層のコントラストの差がより大きくなり、本発明の背面密着フィルムのレーザーマーキング性と赤外線遮蔽性によりいっそう優れる。上記比は、例えば15以下、好ましくは10以下である。なお、本明細書において、各層の吸光度は、公知の分光光度計を用いて測定することができる。
In the back contact film of the present invention, the absorbance of the B layer at a wavelength of 1300 nm is higher than the absorbance of the A layer at a wavelength of 1300 nm. The ratio [B layer / A layer] of the absorbance at wavelength 1300 nm of layer B to the absorbance at wavelength 1300 nm of layer A is not particularly limited, but is preferably 1.2 or more, more preferably 1.5 or more, and more preferably Preferably it is 1.8 or more. The difference of the contrast of A layer and B layer becomes larger as the said ratio is 1.2 or more, and it is further excellent by the laser marking property and infrared rays shielding property of the back contact film of this invention. The ratio is, for example, 15 or less, preferably 10 or less. In the present specification, the absorbance of each layer can be measured using a known spectrophotometer.
A層の波長1300nmにおける吸光度は、特に限定されないが、3以下であることが好ましく、より好ましくは2.5以下、さらに好ましくは2以下である。上記吸光度が3以下であると、A層をよりレーザーマーキング性に適した層とすることができ、本発明の背面密着フィルムのレーザーマーキング性と赤外線遮蔽性によりいっそう優れる構成とすることができる。上記吸光度は、例えば0.1以上である。
The absorbance of the layer A at a wavelength of 1300 nm is not particularly limited, but is preferably 3 or less, more preferably 2.5 or less, and still more preferably 2 or less. A layer can be made into a layer more suitable for laser marking property as the said light absorbency is 3 or less, and it can be set as the structure which is further excellent by the laser marking property and infrared rays shielding property of the back contact film of this invention. The absorbance is, for example, 0.1 or more.
B層の波長1300nmにおける吸光度は、特に限定されないが、0.5以上であることが好ましく、より好ましくは0.7以上、さらに好ましくは1以上である。上記吸光度が0.5以上であると、赤外線遮蔽性により優れる。上記吸光度は、例えば5以下である。
The absorbance of the B layer at a wavelength of 1300 nm is not particularly limited, but is preferably 0.5 or more, more preferably 0.7 or more, and still more preferably 1 or more. It is excellent by infrared shielding property as the said light absorbency is 0.5 or more. The absorbance is, for example, 5 or less.
A層の波長550nmにおける吸光度は、特に限定されないが、0.2~4.5であることが好ましく、より好ましくは0.3~4、さらに好ましくは0.4~3.5である。上記吸光度が0.2以上であると、レーザーマーキング性により優れる。上記吸光度が4.5以下であると、光の過度吸収による光熱変換の上昇に起因するバインダー樹脂など有機成分の昇華を抑制し、文字の荒れを抑制することができる。また、ダイシングテープ一体型背面密着フィルムにおいては層間で気泡が発生しにくい。
The absorbance of the layer A at a wavelength of 550 nm is not particularly limited, but is preferably 0.2 to 4.5, more preferably 0.3 to 4, and still more preferably 0.4 to 3.5. It is excellent by laser marking property as the said light absorbency is 0.2 or more. When the absorbance is 4.5 or less, sublimation of organic components such as a binder resin caused by an increase in light-to-heat conversion due to excessive absorption of light can be suppressed, and character roughening can be suppressed. Further, in the dicing tape-integrated back contact film, air bubbles are unlikely to be generated between the layers.
(A層)
A層は、背面密着フィルムがワークの背面に密着して使用される際において、背面密着フィルム内において最表層となる層である。A層は、ワーク背面密着時においてレーザーマーク層として機能し、半導体装置の製造過程においてレーザーマーキングが施されることとなる。 (A layer)
A layer is a layer which becomes the outermost layer in a back contact film, when a back contact film is used in close contact with the back surface of a work. The layer A functions as a laser mark layer when the workpiece is in close contact with the back surface, and laser marking is performed in the process of manufacturing the semiconductor device.
A層は、背面密着フィルムがワークの背面に密着して使用される際において、背面密着フィルム内において最表層となる層である。A層は、ワーク背面密着時においてレーザーマーク層として機能し、半導体装置の製造過程においてレーザーマーキングが施されることとなる。 (A layer)
A layer is a layer which becomes the outermost layer in a back contact film, when a back contact film is used in close contact with the back surface of a work. The layer A functions as a laser mark layer when the workpiece is in close contact with the back surface, and laser marking is performed in the process of manufacturing the semiconductor device.
A層は、黒色顔料を含有する。これにより、A層のレーザーマーキングによる刻印箇所とそれ以外の箇所との間で高いコントラストを確保して当該刻印情報について良好な視認性を実現することができる。上記黒色顔料は、一種のみを含有していてもよいし、二種以上を含有していてもよい。
The A layer contains a black pigment. Thereby, high contrast can be ensured between the marking location by the laser marking of layer A and the other location, and good visibility can be realized for the marking information. The said black pigment may contain only 1 type, and may contain 2 or more types.
上記黒系顔料としては、例えば、カーボンブラック、カーボンナノチューブ、グラファイト(黒鉛)、酸化銅、二酸化マンガン、アゾメチンアゾブラック等のアゾ系顔料、アニリンブラック、ペリレンブラック、チタンブラック、シアニンブラック、活性炭、フェライト、マグネタイト、酸化クロム、酸化鉄、二硫化モリブデン、複合酸化物系黒色色素等が挙げられる。中でも、カーボンブラックが好ましい。カーボンブラックとしては、例えば、ファーネスブラック、チャンネルブラック、アセチレンブラック、サーマルブラック、ランプブラック等が挙げられる。黒系着色剤としては、ピグメントブラック1、同7等も挙げられる。
Examples of the black pigment include carbon black, carbon nanotubes, graphite (graphite), azo pigments such as copper oxide, manganese dioxide, azomethine azo black, aniline black, perylene black, titanium black, cyanine black, activated carbon, ferrite And magnetite, chromium oxide, iron oxide, molybdenum disulfide, complex oxide black pigment and the like. Among them, carbon black is preferable. Examples of carbon black include furnace black, channel black, acetylene black, thermal black, lamp black and the like. Examples of black colorants include pigment blacks 1 and 7 and the like.
上記黒色顔料の含有割合は、A層の総質量に対して、0.05~5質量%が好ましく、より好ましくは0.1~2質量%、さらに好ましくは0.2~1.5質量%である。上記含有割合が0.05質量%以上であると、A層の吸光度を高いものとすることができ、レーザーマーキング性により優れる。上記含有割合が5質量%以下であると、A層の吸光度を適度に抑えることができ、光の過度吸収による光熱変換の上昇に起因するバインダー樹脂など有機成分の昇華を抑制し、文字の荒れを抑制することができる。また、ダイシングテープ一体型背面密着フィルムにおいては層間で気泡が発生しにくい。
The content ratio of the black pigment is preferably 0.05 to 5% by mass, more preferably 0.1 to 2% by mass, and still more preferably 0.2 to 1.5% by mass with respect to the total mass of the layer A. It is. The light absorbency of A layer can be made high as the said content rate is 0.05 mass% or more, and it is excellent by laser marking property. When the content is 5% by mass or less, the absorbance of the layer A can be appropriately suppressed, and sublimation of organic components such as a binder resin resulting from an increase in light-to-heat conversion due to excessive absorption of light is suppressed. Can be suppressed. Further, in the dicing tape-integrated back contact film, air bubbles are unlikely to be generated between the layers.
A層及びA層を形成する組成物(樹脂組成物)は、熱可塑性樹脂を含むことが好ましい。A層が熱硬化型層(すなわち、熱硬化性層又は熱硬化済み層)である場合、A層及び上記樹脂組成物は、熱硬化性樹脂と熱可塑性樹脂とを含んでいてもよいし、硬化剤と反応して結合を生じ得る熱硬化性官能基を有する熱可塑性樹脂を含んでいてもよい。A層及び上記樹脂組成物が熱硬化性官能基を有する熱可塑性樹脂を含む場合、上記樹脂組成物は熱硬化性樹脂(エポキシ樹脂等)を含む必要はない。
It is preferable that the composition (resin composition) which forms A layer and A layer contains a thermoplastic resin. When the layer A is a thermosetting layer (that is, a thermosetting layer or a thermosetting layer), the layer A and the resin composition may contain a thermosetting resin and a thermoplastic resin. It may contain a thermoplastic resin having a thermosetting functional group capable of reacting with a curing agent to form a bond. When the layer A and the resin composition contain a thermoplastic resin having a thermosetting functional group, the resin composition does not need to contain a thermosetting resin (epoxy resin etc.).
A層及び上記樹脂組成物中の熱可塑性樹脂は例えばバインダー機能を担うものである。上記熱可塑性樹脂としては、例えば、アクリル樹脂、天然ゴム、ブチルゴム、イソプレンゴム、クロロプレンゴム、エチレン-酢酸ビニル共重合体、エチレン-アクリル酸共重合体、エチレン-アクリル酸エステル共重合体、ポリブタジエン樹脂、ポリカーボネート樹脂、熱可塑性ポリイミド樹脂、6-ナイロンや6,6-ナイロン等のポリアミド樹脂、フェノキシ樹脂、アクリル樹脂、ポリエチレンテレフタレート(PET)やポリブチレンテレフタレート(PBT)等の飽和ポリエステル樹脂、ポリアミドイミド樹脂、フッ素樹脂等が挙げられる。上記熱可塑性樹脂は、一種のみを用いてもよいし、二種以上を用いてもよい。上記熱可塑性樹脂としては、イオン性不純物が少なく且つ耐熱性が高いという観点から、アクリル樹脂が好ましい。
The thermoplastic resin in the layer A and the above-mentioned resin composition has, for example, a binder function. Examples of the thermoplastic resin include acrylic resin, natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin , Polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as polyethylene terephthalate (PET) and polybutylene terephthalate (PBT), polyamideimide resins And fluorine resins. The thermoplastic resin may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint of having few ionic impurities and high heat resistance.
上記アクリル樹脂は、ポリマーの構成単位として、アクリル系モノマー(分子中に(メタ)アクリロイル基を有するモノマー成分)に由来する構成単位を含むポリマーである。上記アクリル樹脂は、(メタ)アクリル酸エステルに由来する構成単位を質量割合で最も多く含むポリマーであることが好ましい。なお、アクリル樹脂は、一種のみを使用してもよいし、二種以上を使用してもよい。また、本明細書において、「(メタ)アクリル」とは、「アクリル」及び/又は「メタクリル」(「アクリル」及び「メタクリル」のうち、いずれか一方又は両方)を表し、他も同様である。
The said acrylic resin is a polymer containing the structural unit derived from an acryl-type monomer (The monomer component which has a (meth) acryloyl group in a molecule | numerator) as a structural unit of a polymer. It is preferable that the said acrylic resin is a polymer which contains the structural unit originating in a (meth) acrylic acid ester most by mass ratio. In addition, an acrylic resin may use only 1 type and may use 2 or more types. Further, in the present specification, “(meth) acrylic” represents “acrylic” and / or “methacrylic” (any one or both of “acrylic” and “methacrylic”), and the same applies to others. .
上記(メタ)アクリル酸エステルとしては、例えば、アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルが挙げられる。炭化水素基含有(メタ)アクリル酸エステルとしては、(メタ)アクリル酸アルキルエステル、(メタ)アクリル酸シクロアルキルエステル、(メタ)アクリル酸アリールエステル等が挙げられる。上記(メタ)アクリル酸アルキルエステルとしては、例えば、(メタ)アクリル酸のメチルエステル、エチルエステル、プロピルエステル、イソプロピルエステル、ブチルエステル、イソブチルエステル、s-ブチルエステル、t-ブチルエステル、ペンチルエステル、イソペンチルエステル、ヘキシルエステル、ヘプチルエステル、オクチルエステル、2-エチルヘキシルエステル、イソオクチルエステル、ノニルエステル、デシルエステル、イソデシルエステル、ウンデシルエステル、ドデシルエステル(ラウリルエステル)、トリデシルエステル、テトラデシルエステル、ヘキサデシルエステル、オクタデシルエステル、エイコシルエステル等が挙げられる。上記(メタ)アクリル酸シクロアルキルエステルとしては、例えば、(メタ)アクリル酸のシクロペンチルエステル、シクロヘキシルエステル等が挙げられる。上記(メタ)アクリル酸アリールエステルとしては、例えば、(メタ)アクリル酸のフェニルエステル、ベンジルエステルが挙げられる。アルコキシ基を有する炭化水素基含有(メタ)アクリル酸エステルとしては、上記炭化水素基含有(メタ)アクリル酸エステルにおける炭化水素基中の1以上の水素原子をアルコキシ基に置換したものが挙げられ、例えば、(メタ)アクリル酸の2-メトキシメチルエステル、2-メトキシエチルエステル、2-メトキシブチルエステル等が挙げられる。上記アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルは、一種のみを使用してもよいし、二種以上を使用してもよい。
As said (meth) acrylic acid ester, the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group is mentioned, for example. Examples of the hydrocarbon group-containing (meth) acrylic acid ester include (meth) acrylic acid alkyl ester, (meth) acrylic acid cycloalkyl ester, and (meth) acrylic acid aryl ester. Examples of the above (meth) acrylic acid alkyl ester include methyl ester of (meth) acrylic acid, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester (lauryl ester), tridecyl ester, tetradecyl ester Hexadecyl ester, octadecyl ester, eicosyl ester and the like. Examples of the (meth) acrylic acid cycloalkyl ester include cyclopentyl ester and cyclohexyl ester of (meth) acrylic acid. Examples of the (meth) acrylic acid aryl ester include phenyl ester of (meth) acrylic acid and benzyl ester. Examples of the hydrocarbon group-containing (meth) acrylic acid ester having an alkoxy group include those in which one or more hydrogen atoms in the hydrocarbon group in the above-mentioned hydrocarbon group-containing (meth) acrylic acid ester are substituted with an alkoxy group, For example, 2-methoxymethyl ester of (meth) acrylic acid, 2-methoxyethyl ester, 2-methoxybutyl ester and the like can be mentioned. The hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more.
上記アクリル樹脂は、凝集力、耐熱性等の改質を目的として、アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルと共重合可能な他のモノマー成分に由来する構成単位を含んでいてもよい。上記他のモノマー成分としては、例えば、カルボキシ基含有モノマー、酸無水物モノマー、ヒドロキシ基含有モノマー、グリシジル基含有モノマー、スルホン酸基含有モノマー、リン酸基含有モノマー、アクリルアミド、アクリロニトリル等の官能基含有モノマー等が挙げられる。上記カルボキシ基含有モノマーとしては、例えば、アクリル酸、メタクリル酸、カルボキシエチル(メタ)アクリレート、カルボキシペンチル(メタ)アクリレート、イタコン酸、マレイン酸、フマル酸、クロトン酸等が挙げられる。上記酸無水物モノマーとしては、例えば、無水マレイン酸、無水イタコン酸等が挙げられる。上記ヒドロキシ基含有モノマーとしては、例えば、(メタ)アクリル酸2-ヒドロキシエチル、(メタ)アクリル酸2-ヒドロキシプロピル、(メタ)アクリル酸4-ヒドロキシブチル、(メタ)アクリル酸6-ヒドロキシヘキシル、(メタ)アクリル酸8-ヒドロキシオクチル、(メタ)アクリル酸10-ヒドロキシデシル、(メタ)アクリル酸12-ヒドロキシラウリル、(4-ヒドロキシメチルシクロヘキシル)メチル(メタ)アクリレート等が挙げられる。上記グリシジル基含有モノマーとしては、例えば、(メタ)アクリル酸グリシジル、(メタ)アクリル酸メチルグリシジル等が挙げられる。上記スルホン酸基含有モノマーとしては、例えば、スチレンスルホン酸、アリルスルホン酸、2-(メタ)アクリルアミド-2-メチルプロパンスルホン酸、(メタ)アクリルアミドプロパンスルホン酸、スルホプロピル(メタ)アクリレート、(メタ)アクリロイルオキシナフタレンスルホン酸等が挙げられる。上記リン酸基含有モノマーとしては、例えば、2-ヒドロキシエチルアクリロイルホスフェート等が挙げられる。上記他のモノマー成分は、一種のみを使用してもよいし、二種以上を使用してもよい。
The said acrylic resin is a structure derived from the other monomer component which can be copolymerized with the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group for the purpose of modification, such as cohesion force and heat resistance. It may contain units. As said other monomer component, functional group containing functional groups, such as a carboxy group containing monomer, an acid anhydride monomer, a hydroxyl group containing monomer, a glycidyl group containing monomer, a sulfonic acid group containing monomer, a phosphoric acid group containing monomer, acrylamide, acrylonitrile etc. are mentioned, for example. Monomers etc. are mentioned. Examples of the carboxy group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, crotonic acid and the like. Examples of the acid anhydride monomer include maleic anhydride, itaconic anhydride and the like. Examples of the above-mentioned hydroxy group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, Examples thereof include 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate. Examples of the glycidyl group-containing monomers include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrene sulfonic acid, allyl sulfonic acid, 2- (meth) acrylamido-2-methylpropane sulfonic acid, (meth) acrylamidopropane sulfonic acid, sulfopropyl (meth) acrylate, (meth Acryloyloxy naphthalene sulfonic acid etc. are mentioned. Examples of the above-mentioned phosphoric acid group-containing monomer include 2-hydroxyethyl acryloyl phosphate and the like. The other monomer components may be used alone or in combination of two or more.
A層及び上記樹脂組成物に含まれ得るアクリル樹脂は、レーザーマーキングによる刻印情報の視認性とエキスパンド時の良好な割断性とを両立する観点から、アクリル酸ブチル、アクリル酸エチル、アクリロニトリル、及びアクリル酸から適宜に選択されるモノマーの共重合体であることが好ましい。
The acrylic resin that may be contained in the layer A and the above resin composition is, from the viewpoint of achieving both the visibility of the imprinted information by laser marking and the good cleavability at the time of expanding, butyl acrylate, ethyl acrylate, acrylonitrile, and acrylic It is preferable that it is a copolymer of monomers appropriately selected from acids.
A層及び上記樹脂組成物が熱硬化性樹脂を熱可塑性樹脂とともに含む場合、当該熱硬化性樹脂としては、例えば、エポキシ樹脂、フェノール樹脂、アミノ樹脂、不飽和ポリエステル樹脂、ポリウレタン樹脂、シリコーン樹脂、熱硬化性ポリイミド樹脂等が挙げられる。上記熱硬化性樹脂は、一種のみを用いてもよいし、二種以上を用いてもよい。半導体チップの腐食原因となり得るイオン性不純物等の含有量の少ない傾向にあるという理由から、上記熱硬化性樹脂としてはエポキシ樹脂が好ましい。また、エポキシ樹脂の硬化剤としてはフェノール樹脂が好ましい。
When the layer A and the resin composition contain a thermosetting resin together with a thermoplastic resin, examples of the thermosetting resin include epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin, silicone resin, A thermosetting polyimide resin etc. are mentioned. The said thermosetting resin may use only 1 type, and may use 2 or more types. An epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like which may cause corrosion of the semiconductor chip tends to be small. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.
上記エポキシ樹脂としては、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、臭素化ビスフェノールA型エポキシ樹脂、水添ビスフェノールA型エポキシ樹脂、ビスフェノールAF型エポキシ樹脂、ビフェニル型エポキシ樹脂、ナフタレン型エポキシ樹脂、フルオレン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂等のクレゾールノボラック型エポキシ樹脂、トリスヒドロキシフェニルメタン型エポキシ樹脂、テトラフェニロールエタン型エポキシ樹脂等の多官能エポキシ樹脂が挙げられる。上記エポキシ樹脂は、一種のみを用いてもよいし、二種以上を用いてもよい。
Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, hydrogenated bisphenol A epoxy resin, bisphenol AF epoxy resin, biphenyl resin Cresol novolac epoxy resin such as epoxy resin, naphthalene epoxy resin, fluorene epoxy resin, phenol novolac epoxy resin, ortho cresol novolac epoxy resin, trishydroxyphenylmethane epoxy resin, tetraphenylolethane epoxy resin etc A multifunctional epoxy resin is mentioned. The said epoxy resin may use only 1 type, and may use 2 or more types.
中でも、硬化剤としてのフェノール樹脂との反応性に富み且つ耐熱性に優れることから、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、トリスヒドロキシフェニルメタン型エポキシ樹脂、テトラフェニロールエタン型エポキシ樹脂が好ましい。
Among them, a phenol novolac epoxy resin, an ortho cresol novolac epoxy resin, a biphenyl epoxy resin, a trishydroxyphenylmethane epoxy resin, tetrapheny, since they are rich in reactivity with a phenol resin as a curing agent and excellent in heat resistance. Roll ethane type epoxy resin is preferred.
エポキシ樹脂の硬化剤として作用し得るフェノール樹脂としては、例えば、フェノールノボラック樹脂、フェノールアラルキル樹脂、クレゾールノボラック樹脂、tert-ブチルフェノールノボラック樹脂、ノニルフェノールノボラック樹脂等のノボラック型フェノール樹脂が挙げられる。また、当該フェノール樹脂としては、レゾール型フェノール樹脂、ポリパラオキシスチレン等のポリオキシスチレンも挙げられる。上記フェノール樹脂は、一種のみを用いてもよいし、二種以上を用いてもよい。
As a phenol resin which can act as a curing agent for epoxy resin, for example, novolac type phenol resins such as phenol novolac resin, phenol aralkyl resin, cresol novolac resin, tert-butylphenol novolac resin, nonylphenol novolac resin and the like can be mentioned. Moreover, as said phenol resin, polyoxystyrenes, such as a resol type phenol resin and polypara oxystyrene, are also mentioned. The said phenol resin may use only 1 type, and may use 2 or more types.
A層及び上記樹脂組成物において、エポキシ樹脂とフェノール樹脂との硬化反応を充分に進行させるという観点からは、フェノール樹脂は、エポキシ樹脂成分中のエポキシ基1当量当たり、当該フェノール樹脂中の水酸基が好ましくは0.5~2.0当量、より好ましくは0.8~1.2当量となる量で含まれる。
In the layer A and the above resin composition, from the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin, the phenol resin has a hydroxyl group in the phenol resin per equivalent of epoxy group in the epoxy resin component. It is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.
A層及び上記樹脂組成物が熱硬化性樹脂を含む場合、上記熱硬化性樹脂の含有割合は、A層又は上記樹脂組成物の総質量に対して、5~60質量%が好ましく、より好ましくは10~50質量%である。
When the layer A and the resin composition contain a thermosetting resin, the content of the thermosetting resin is preferably 5 to 60% by mass, more preferably the total mass of the layer A or the resin composition. Is 10 to 50% by mass.
A層及び上記樹脂組成物が熱硬化性官能基を有する熱可塑性樹脂を含む場合、当該熱可塑性樹脂としては、例えば、熱硬化性官能基含有アクリル樹脂を用いることができる。この熱硬化性官能基含有アクリル樹脂におけるアクリル樹脂は、好ましくは、炭化水素基含有(メタ)アクリル酸エステルに由来する構成単位を質量割合で最も多い構成単位として含む。当該炭化水素基含有(メタ)アクリル酸エステルとしては、例えば、上述のA層に含まれ得る熱可塑性樹脂としてのアクリル樹脂を形成する炭化水素基含有(メタ)アクリル酸エステルとして例示された炭化水素基含有(メタ)アクリル酸エステルが挙げられる。一方、熱硬化性官能基含有アクリル樹脂における熱硬化性官能基としては、例えば、グリシジル基、カルボキシ基、ヒドロキシ基、イソシアネート基等が挙げられる。中でも、グリシジル基、カルボキシ基が好ましい。すなわち、熱硬化性官能基含有アクリル樹脂としては、グリシジル基含有アクリル樹脂、カルボキシ基含有アクリル樹脂が特に好ましい。また、熱硬化性官能基含有アクリル樹脂とともに硬化剤を含むことが好ましく、当該硬化剤としては、例えば、後述の粘着剤層形成用の放射線硬化性粘着剤に含まれ得る架橋剤として例示されたものが挙げられる。熱硬化性官能基含有アクリル樹脂における熱硬化性官能基がグリシジル基である場合には、硬化剤として、ポリフェノール系化合物を用いることが好ましく、例えば上述の各種フェノール樹脂を用いることができる。
When A layer and the said resin composition contain the thermoplastic resin which has a thermosetting functional group, a thermosetting functional group containing acrylic resin can be used as said thermoplastic resin, for example. The acrylic resin in the thermosetting functional group-containing acrylic resin preferably contains a structural unit derived from a hydrocarbon group-containing (meth) acrylic acid ester as the largest structural unit in mass ratio. As the said hydrocarbon group containing (meth) acrylic acid ester, the hydrocarbon illustrated as a hydrocarbon group containing (meth) acrylic acid ester which forms the acrylic resin as a thermoplastic resin which may be contained in the above-mentioned A layer, for example A group containing (meth) acrylic acid ester is mentioned. On the other hand, as a thermosetting functional group in a thermosetting functional group containing acrylic resin, a glycidyl group, a carboxy group, a hydroxyl group, an isocyanate group etc. are mentioned, for example. Among them, glycidyl group and carboxy group are preferable. That is, as a thermosetting functional group containing acrylic resin, a glycidyl group containing acrylic resin and a carboxy group containing acrylic resin are especially preferable. Moreover, it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin, and as the curing agent, for example, it is exemplified as a crosslinking agent which can be included in a radiation curable adhesive for forming an adhesive layer described later. The thing is mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, and, for example, various phenol resins described above can be used.
A層及び上記樹脂組成物が熱硬化性樹脂を含む場合、熱硬化触媒(熱硬化促進剤)を含有することが好ましい。熱硬化触媒を含むと、A層の硬化にあたって樹脂成分の硬化反応を充分に進行させたり、硬化反応速度を高めることができる。上記熱硬化触媒としては、例えば、イミダゾール系化合物、トリフェニルホスフィン系化合物、アミン系化合物、トリハロゲンボラン系化合物等が挙げられる。イミダゾール系化合物としては、例えば、2-メチルイミダゾール、2-ウンデシルイミダゾール、2-ヘプタデシルイミダゾール、1,2-ジメチルイミダゾール、2-エチル-4-メチルイミダゾール、2-フェニルイミダゾール、2-フェニル-4-メチルイミダゾール、1-ベンジル-2-メチルイミダゾール、1-ベンジル-2-フェニルイミダゾール、1-シアノエチル-2-メチルイミダゾール、1-シアノエチル-2-ウンデシルイミダゾール、1-シアノエチル-2-フェニルイミダゾリウムトリメリテイト、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-ウンデシルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-エチル-4’-メチルイミダゾリル-(1’)]-エチル-s-トリアジン、2,4-ジアミノ-6-[2’-メチルイミダゾリル-(1’)]-エチル-s-トリアジンイソシアヌル酸付加物、2-フェニル-4,5-ジヒドロキシメチルイミダゾール、2-フェニル-4-メチル-5-ヒドロキシメチルイミダゾール等が挙げられる。トリフェニルホスフィン系化合物としては、例えば、トリフェニルホスフィン、トリブチルホスフィン、トリ(p-メチルフェニル)ホスフィン、トリ(ノニルフェニル)ホスフィン、ジフェニルトリルホスフィン、テトラフェニルホスホニウムブロマイド、メチルトリフェニルホスホニウム、メチルトリフェニルホスホニウムクロライド、メトキシメチルトリフェニルホスホニウム、ベンジルトリフェニルホスホニウムクロライド等が挙げられる。トリフェニルホスフィン系化合物には、トリフェニルホスフィン構造とトリフェニルボラン構造とを併有する化合物も含まれるものとする。そのような化合物としては、例えば、テトラフェニルホスホニウムテトラフェニルボレート、テトラフェニルホスホニウムテトラ-p-トリボレート、ベンジルトリフェニルホスホニウムテトラフェニルボレート、トリフェニルホスフィントリフェニルボラン等が挙げられる。アミン系化合物としては、例えば、モノエタノールアミントリフルオロボレート、ジシアンジアミド等が挙げられる。トリハロゲンボラン系化合物としては、例えばトリクロロボラン等が挙げられる。上記熱硬化触媒は、一種のみを含有していてもよいし、二種以上を含有していてもよい。
When A layer and the said resin composition contain a thermosetting resin, it is preferable to contain a thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is contained, the curing reaction of the resin component can be sufficiently advanced to cure the layer A, and the curing reaction rate can be increased. Examples of the thermosetting catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihalogenborane compounds. Examples of imidazole compounds include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole and 2-phenyl- 4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazo Lilium trimellitate, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-undecylimidazolyl- (1 ')]-Ethyl-s-triazine, 2,4-diamide -6- [2′-ethyl-4′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl- Examples thereof include s-triazine isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole and the like. Examples of triphenyl phosphine compounds include triphenyl phosphine, tributyl phosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, diphenyl tolyl phosphine, tetraphenyl phosphonium bromide, methyl triphenyl phosphonium and methyl triphenyl Phosphonium chloride, methoxymethyltriphenylphosphonium, benzyltriphenylphosphonium chloride and the like can be mentioned. The triphenylphosphine-based compounds also include compounds having both a triphenylphosphine structure and a triphenylborane structure. Examples of such a compound include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-triborate, benzyltriphenylphosphonium tetraphenylborate, triphenylphosphine triphenylborane and the like. Examples of amine compounds include monoethanolamine trifluoroborate, dicyandiamide and the like. Examples of trihalogen borane compounds include trichloroborane and the like. The said thermosetting catalyst may contain only 1 type, and may contain 2 or more types.
A層及び上記樹脂組成物は、フィラーを含んでいてもよい。フィラーを含むことにより、A層の弾性率や、降伏点強度、破断伸度等の物性を調整しやすい。また、レーザーマーキングにより刻印情報をより明確に付与することが可能となる。フィラーとしては、無機フィラー、有機フィラーが挙げられる。無機フィラーの構成材料としては、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ホウ酸アルミニウムウィスカ、窒化ケイ素、窒化ホウ素、結晶質シリカ、非晶質シリカ等が挙げられる。また、無機フィラーの構成材料としては、アルミニウム、金、銀、銅、ニッケル等の単体金属や、合金、アモルファスカーボン、グラファイト等も挙げられる。有機フィラーの構成材料としては、例えば、ポリメタクリル酸メチル(PMMA)、ポリイミド、ポリアミドイミド、ポリエーテルエーテルケトン、ポリエーテルイミド、ポリエステルイミドが挙げられる。上記フィラーは、一種のみを含有していてもよいし、二種以上を含有していてもよい。
The layer A and the resin composition may contain a filler. By including the filler, it is easy to adjust the physical properties such as the modulus of elasticity of the layer A, the strength at yield point, and the elongation at break. Moreover, it becomes possible to provide marking information more clearly by laser marking. As a filler, an inorganic filler and an organic filler are mentioned. As a constituent material of the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitrided Silicon, boron nitride, crystalline silica, amorphous silica and the like can be mentioned. Moreover, as a constituent material of the inorganic filler, single metals such as aluminum, gold, silver, copper, nickel and the like, alloys, amorphous carbon, graphite and the like can also be mentioned. Examples of the constituent material of the organic filler include poly (methyl methacrylate) (PMMA), polyimide, polyamide imide, polyether ether ketone, polyether imide, and polyester imide. The said filler may contain only 1 type, and may contain 2 or more types.
上記フィラーは、球状、針状、フレーク状等各種形状を有していてもよい。上記フィラーの平均粒径は、10μm以下が好ましく、より好ましくは8μm以下、さらに好ましくは7μm以下である。上記平均粒径は、0.1μm以上が好ましく、より好ましくは0.2μm以上である。上記平均粒径が10μm以下であると、レーザーマーキング時に照射する光線の乱反射を抑制し、赤外線遮蔽性に優れると共に、レーザーマーキングにより刻印情報をより明確に付与することが可能となる。また、小片化されることとなる背面密着フィルムについて割断性により優れる。本明細書において、フィラーの平均粒径は、例えば、光度式の粒度分布計(商品名「LA-910」、株式会社堀場製作所製)を使用して求めることができる。
The filler may have various shapes such as sphere, needle, and flake. The average particle diameter of the filler is preferably 10 μm or less, more preferably 8 μm or less, and still more preferably 7 μm or less. The average particle diameter is preferably 0.1 μm or more, and more preferably 0.2 μm or more. When the average particle diameter is 10 μm or less, irregular reflection of a light beam irradiated at the time of laser marking can be suppressed, and the infrared shielding property is excellent, and imprint information can be more clearly provided by laser marking. Moreover, it is excellent by cutting property about the back contact film which will be fragmented. In the present specification, the average particle diameter of the filler can be determined, for example, using a light intensity type particle size distribution analyzer (trade name “LA-910”, manufactured by Horiba, Ltd.).
上記フィラーの含有割合は、A層又は上記樹脂組成物の総質量に対して、10質量%以上が好ましく、より好ましくは15質量%以上、より好ましくは20質量%以上である。上記含有割合は、60質量%以下が好ましく、より好ましくは57質量%以下、さらに好ましくは55質量%以下である。
The content ratio of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more based on the total mass of the layer A or the resin composition. The content ratio is preferably 60% by mass or less, more preferably 57% by mass or less, and still more preferably 55% by mass or less.
A層及び上記樹脂組成物は、必要に応じて他の成分を含んでいてもよい。上記他の成分としては、例えば、難燃剤、シランカップリング剤、イオントラップ剤、上記黒色顔料以外の着色剤等が挙げられる。上記難燃剤としては、例えば、水酸化アルミニウム、水酸化マグネシウム、水酸化鉄、水酸化カルシウム、水酸化スズ、複合化金属水酸化物等の金属水酸化物、ホスファゼン系化合物、三酸化アンチモン、五酸化アンチモン、臭素化エポキシ樹脂等が挙げられる。上記シランカップリング剤としては、例えば、β-(3、4-エポキシシクロヘキシル)エチルトリメトキシシラン、γ-グリシドキシプロピルトリメトキシシラン、γ-グリシドキシプロピルメチルジエトキシシラン等が挙げられる。上記イオントラップ剤としては、例えば、ハイドロタルサイト類、水酸化ビスマス、含水酸化アンチモン(例えば東亜合成株式会社製の「IXE-300」)、特定構造のリン酸ジルコニウム(例えば東亜合成株式会社製の「IXE-100」)、ケイ酸マグネシウム(例えば協和化学工業株式会社製の「キョーワード600」)、ケイ酸アルミニウム(例えば協和化学工業株式会社製の「キョーワード700」)等が挙げられる。金属イオンとの間で錯体を形成し得る化合物もイオントラップ剤として使用することができる。そのような化合物としては、例えば、トリアゾール系化合物、テトラゾール系化合物、ビピリジル系化合物が挙げられる。これらのうち、金属イオンとの間で形成される錯体の安定性の観点からはトリアゾール系化合物が好ましい。そのようなトリアゾール系化合物としては、例えば、1,2,3-ベンゾトリアゾール、1-{N,N-ビス(2-エチルヘキシル)アミノメチル}ベンゾトリアゾール、カルボキシベンゾトリアゾール、2-(2-ヒドロキシ-5-メチルフェニル)ベンゾトリアゾール、2-(2-ヒドロキシ-3,5-ジ-t-ブチルフェニル)-5-クロロベンゾトリアゾール、2-(2-ヒドロキシ-3-t-ブチル-5-メチルフェニル)-5-クロロベンゾトリアゾール、2-(2-ヒドロキシ-3,5-ジ-t-アミルフェニル)ベンゾトリアゾール、2-(2-ヒドロキシ-5-t-オクチルフェニル)ベンゾトリアゾール、6-(2-ベンゾトリアゾリル)-4-t-オクチル-6’-t-ブチル-4’-メチル-2,2’-メチレンビスフェノール、1-(2’,3’-ヒドロキシプロピル)ベンゾトリアゾール、1-(1,2-ジカルボキシジエチル)ベンゾトリアゾール、1-(2-エチルヘキシルアミノメチル)ベンゾトリアゾール、2,4-ジ-t-ペンチル-6-{(H-ベンゾトリアゾール-1-イル)メチル}フェノール、2-(2-ヒドロキシ-5-t-ブチルフェニル)-2H-ベンゾトリアゾール、3-(2H-ベンゾトリアゾール-2-イル)-5-(1,1-ジメチルエチル)-4-ヒドロキシ、オクチル-3-[3-t-ブチル-4-ヒドロキシ-5-(5-クロロ-2H-ベンゾトリアゾール-2-イル)フェニル]プロピオネート、2-エチルヘキシル-3-[3-t-ブチル-4-ヒドロキシ-5-(5-クロロ-2H-ベンゾトリアゾール-2-イル)フェニル]プロピオネート、2-(2H-ベンゾトリアゾール-2-イル)-6-(1-メチル-1-フェニルエチル)-4-(1,1,3,3-テトラメチルブチル)フェノール、2-(2H-ベンゾトリアゾール-2-イル)-4-t-ブチルフェノール、2-(2-ヒドロキシ-5-メチルフェニル)ベンゾトリアゾール、2-(2-ヒドロキシ-5-t-オクチルフェニル)-ベンゾトリアゾール、2-(3-t-ブチル-2-ヒドロキシ-5-メチルフェニル)-5-クロロベンゾトリアゾール、2-(2-ヒドロキシ-3,5-ジ-t-アミルフェニル)ベンゾトリアゾール、2-(2-ヒドロキシ-3,5-ジ-t-ブチルフェニル)-5-クロロ-ベンゾトリアゾール、2-[2-ヒドロキシ-3,5-ジ(1,1-ジメチルベンジル)フェニル]-2H-ベンゾトリアゾール、2,2’-メチレンビス[6-(2H-ベンゾトリアゾール-2-イル)-4-(1,1,3,3-テトラメチルブチル)フェノール]、2-[2-ヒドロキシ-3,5-ビス(α,α-ジメチルベンジル)フェニル]-2H-ベンゾトリアゾール、メチル-3-[3-(2H-ベンゾトリアゾール-2-イル)-5-t-ブチル-4-ヒドロキシフェニル]プロピオネート等が挙げられる。また、キノール化合物や、ヒドロキシアントラキノン化合物、ポリフェノール化合物等の特定の水酸基含有化合物も、イオントラップ剤として使用することができる。そのような水酸基含有化合物としては、具体的には、1,2-ベンゼンジオール、アリザリン、アントラルフィン、タンニン、没食子酸、没食子酸メチル、ピロガロール等が挙げられる。上記黒色顔料以外の着色剤としては、シアン系着色剤、マゼンダ系着色剤、イエロー系着色剤等が挙げられる。上記他の成分は、一種のみを使用してもよいし、二種以上を使用してもよい。
The layer A and the above resin composition may contain other components as needed. As said other component, flame retardants, a silane coupling agent, an ion trap agent, coloring agents other than the said black pigment, etc. are mentioned, for example. Examples of the flame retardant include metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, complexed metal hydroxides, phosphazene compounds, antimony trioxide, Antimony oxide, brominated epoxy resin etc. are mentioned. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. Examples of the ion trap agent include hydrotalcites, bismuth hydroxide, hydrous antimony oxide (eg, “IXE-300” manufactured by Toagosei Co., Ltd.), and zirconium phosphate having a specific structure (eg, manufactured by Toagosei Co., Ltd.) “IXE-100”), magnesium silicate (eg “Kyoward 600” manufactured by Kyowa Chemical Industry Co., Ltd.), aluminum silicate (eg “Kyoward 700 manufactured by Kyowa Chemical Industry Co., Ltd.”) and the like. Compounds capable of forming a complex with a metal ion can also be used as an ion trapping agent. Examples of such a compound include triazole compounds, tetrazole compounds and bipyridyl compounds. Among these, triazole compounds are preferable from the viewpoint of the stability of the complex formed with the metal ion. As such a triazole compound, for example, 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, carboxybenzotriazole, 2- (2-hydroxy-) 5-Methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3-t-butyl-5-methylphenyl) ) 5-Chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-5-t-octylphenyl) benzotriazole, 6- (2 -Benzotriazolyl) -4-t-octyl-6'-t-butyl-4'-methyl-2,2'-methylenebi Phenol, 1- (2 ', 3'-hydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-di-t -Pentyl-6-{(H-benzotriazol-1-yl) methyl} phenol, 2- (2-hydroxy-5-tert-butylphenyl) -2H-benzotriazole, 3- (2H-benzotriazole-2-) Yl) -5- (1,1-dimethylethyl) -4-hydroxy, octyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazol-2-yl) phenyl ] Propionate, 2-Ethylhexyl-3- [3-t-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole) -2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1,1,3,3-tetramethylbutyl) Phenol, 2- (2H-benzotriazol-2-yl) -4-tert-butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-tert-octylphenyl) -Benzotriazole, 2- (3-t-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-t-amylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-t-butylphenyl) -5-chloro-benzotriazole, 2- [2-hydroxy-3,5-di (1 , 1-Dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl) -4- (1,1,3,3-tetramethylbutyl) phenol ], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H-benzotriazole, methyl-3- [3- (2H-benzotriazol-2-yl) -5-] t-Butyl-4-hydroxyphenyl] propionate and the like. In addition, specific hydroxyl group-containing compounds such as quinol compounds, hydroxyanthraquinone compounds and polyphenol compounds can also be used as the ion trap agent. Specific examples of such a hydroxyl group-containing compound include 1,2-benzenediol, alizarin, anthralpine, tannin, gallic acid, methyl gallate, pyrogallol and the like. Examples of colorants other than the black pigment include cyan colorants, magenta colorants, yellow colorants and the like. The other components may be used alone or in combination of two or more.
A層は、熱硬化型層(すなわち、熱硬化性層又は熱硬化済み層)であることが好ましく、熱硬化性成分が熱硬化された熱硬化型層(熱硬化済み層)であることがより好ましい。熱硬化済みのA層は、A層を形成する樹脂組成物から形成された熱硬化性の樹脂組成物層を硬化させることにより形成される。
The layer A is preferably a thermosetting layer (that is, a thermosetting layer or a thermosetting layer), and the thermosetting component is a thermosetting layer (thermosetting layer) that is thermosetting. More preferable. The thermosetting A layer is formed by curing a thermosetting resin composition layer formed from the resin composition forming the A layer.
(B層)
B層は、背面密着フィルムがワークの背面に密着して使用される際において、背面密着フィルム内において内層(最表層とワークの間に位置する層)となる層である。B層は、ワーク背面密着時において、ワーク背面への貼着面を有する接着剤層であってもよく、接着剤層と最表層の間に位置する中間層であってもよい。接着剤層となるB層は、ワーク背面に貼着された後、熱硬化によりワーク背面に接着して保護することが可能となるように、熱硬化性を有していてもよい。なお、接着剤層が熱硬化性を有しない非熱硬化性である場合、接着剤層は、感圧等による界面での密着性(濡れ性)や化学結合によりワーク背面に接着して保護することが可能である。 (B layer)
B layer is a layer used as an inner layer (layer located between the outermost layer and work) in the back contact film when the back contact film is used in close contact with the back surface of the work. The layer B may be an adhesive layer having a bonding surface to the rear surface of the workpiece when in close contact with the rear surface of the workpiece, or may be an intermediate layer positioned between the adhesive layer and the outermost layer. The layer B to be the adhesive layer may have a thermosetting property so that it can be adhered and protected to the back surface of the work by heat curing after being attached to the back surface of the work. When the adhesive layer is non-thermosetting and does not have thermosetting property, the adhesive layer is adhered to the back surface of the work by adhesion (wettability) at the interface due to pressure etc. It is possible.
B層は、背面密着フィルムがワークの背面に密着して使用される際において、背面密着フィルム内において内層(最表層とワークの間に位置する層)となる層である。B層は、ワーク背面密着時において、ワーク背面への貼着面を有する接着剤層であってもよく、接着剤層と最表層の間に位置する中間層であってもよい。接着剤層となるB層は、ワーク背面に貼着された後、熱硬化によりワーク背面に接着して保護することが可能となるように、熱硬化性を有していてもよい。なお、接着剤層が熱硬化性を有しない非熱硬化性である場合、接着剤層は、感圧等による界面での密着性(濡れ性)や化学結合によりワーク背面に接着して保護することが可能である。 (B layer)
B layer is a layer used as an inner layer (layer located between the outermost layer and work) in the back contact film when the back contact film is used in close contact with the back surface of the work. The layer B may be an adhesive layer having a bonding surface to the rear surface of the workpiece when in close contact with the rear surface of the workpiece, or may be an intermediate layer positioned between the adhesive layer and the outermost layer. The layer B to be the adhesive layer may have a thermosetting property so that it can be adhered and protected to the back surface of the work by heat curing after being attached to the back surface of the work. When the adhesive layer is non-thermosetting and does not have thermosetting property, the adhesive layer is adhered to the back surface of the work by adhesion (wettability) at the interface due to pressure etc. It is possible.
B層は、黒色顔料を含有する。これにより、B層の赤外線遮光性を優れるものとすることができる。上記黒色顔料は、一種のみを含有していてもよいし、二種以上を含有していてもよい。
The B layer contains a black pigment. Thereby, the infrared ray blocking property of the B layer can be made excellent. The said black pigment may contain only 1 type, and may contain 2 or more types.
上記黒系顔料としては、上述のA層に含まれる黒色顔料として例示されたものが挙げられる。中でも、カーボンブラックが好ましい。なお、B層中に含まれる黒色顔料は、A層中に含まれる黒色顔料と同種のものであることが好ましい。すなわち、A層中の黒色顔料がカーボンブラックである場合、B層中の黒色顔料はカーボンブラックであることが好ましい。A層中の黒色顔料とB層中の黒色顔料が同種(特に、共にカーボンブラック)である場合、含有割合の調整によりA層とB層の吸光度を容易に調整することができ、容易に本発明の背面密着フィルムを得ることができる。
Examples of the black-based pigment include those exemplified as the black pigment contained in the above-mentioned A layer. Among them, carbon black is preferable. The black pigment contained in the B layer is preferably the same as the black pigment contained in the A layer. That is, when the black pigment in the A layer is carbon black, the black pigment in the B layer is preferably carbon black. When the black pigment in the A layer and the black pigment in the B layer are the same type (especially, both are carbon black), the absorbance of the A layer and the B layer can be easily adjusted by adjusting the content ratio, and this is easily The back contact film of the invention can be obtained.
B層中の黒色顔料の含有割合は、A層中の黒色顔料の含有割合よりも高いことが好ましい。この場合、B層の吸光度がA層の吸光度よりも高くなる傾向がある。特に、A層とB層とで同種の黒色顔料を用いた場合、B層の吸光度がA層の吸光度よりも高くなる。
The content of the black pigment in the layer B is preferably higher than the content of the black pigment in the layer A. In this case, the absorbance of the B layer tends to be higher than the absorbance of the A layer. In particular, when black pigments of the same type are used in layer A and layer B, the absorbance of layer B is higher than the absorbance of layer A.
B層中の黒色顔料の含有割合は、B層の総質量に対して、0.5~10質量%が好ましく、より好ましくは0.8~8質量%、さらに好ましくは1~5質量%である。上記含有割合が0.5質量%以上であると、B層の吸光度を高いものとすることができ、赤外線遮蔽性により優れる。上記含有割合が10質量%以下であると、ワーク背面への密着性により優れる。
The content of the black pigment in the layer B is preferably 0.5 to 10% by mass, more preferably 0.8 to 8% by mass, and still more preferably 1 to 5% by mass with respect to the total mass of the layer B. is there. The light absorbency of B layer can be made high as the said content rate is 0.5 mass% or more, and it is excellent by infrared rays shielding property. It is excellent by the adhesiveness to the back surface of a workpiece | work that the said content rate is 10 mass% or less.
B層及びB層を形成する組成物(樹脂組成物)は、熱可塑性樹脂を含むことが好ましい。B層が熱硬化性を有する場合、B層及びB層を形成する樹脂組成物は、熱硬化性樹脂と熱可塑性樹脂とを含んでいてもよいし、硬化剤と反応して結合を生じ得る熱硬化性官能基を有する熱可塑性樹脂を含んでいてもよい。B層が、熱硬化性官能基を有する熱可塑性樹脂を含む場合、当該樹脂組成物は熱硬化性樹脂(エポキシ樹脂等)を含む必要はない。
It is preferable that the composition (resin composition) which forms B layer and B layer contains a thermoplastic resin. When the layer B has a thermosetting property, the resin composition forming the layer B and the layer B may contain a thermosetting resin and a thermoplastic resin, and may react with a curing agent to form a bond. You may contain the thermoplastic resin which has a thermosetting functional group. When B layer contains the thermoplastic resin which has a thermosetting functional group, the said resin composition does not need to contain thermosetting resin (an epoxy resin etc.).
上記熱可塑性樹脂は例えばB層においてバインダー機能を担うものである。上記熱可塑性樹脂としては、上述のA層が含み得る熱可塑性樹脂として例示されたものが挙げられる。上記熱可塑性樹脂は、一種のみを用いてもよいし、二種以上を用いてもよい。上記熱可塑性樹脂としては、イオン性不純物が少なく且つ耐熱性が高いという観点から、アクリル樹脂が好ましい。
The thermoplastic resin has, for example, a binder function in the B layer. As said thermoplastic resin, what was illustrated as a thermoplastic resin which the above-mentioned A layer may contain is mentioned. The thermoplastic resin may be used alone or in combination of two or more. As the thermoplastic resin, an acrylic resin is preferable from the viewpoint of having few ionic impurities and high heat resistance.
B層及びB層を形成する樹脂組成物に含まれ得るアクリル樹脂は、B層が接着剤層である場合にワークに対する接着性とエキスパンド時における良好な割断性とを両立する観点から、アクリル酸ブチル、アクリル酸エチル、アクリロニトリル、及びアクリル酸から適宜に選択されるモノマーの共重合体であることが好ましい。
The acrylic resin which may be contained in the resin composition for forming the layer B and the layer B is an acrylic acid from the viewpoint of achieving both the adhesiveness to the work and the good cleavability at the time of expansion when the layer B is an adhesive layer. It is preferable that it is a copolymer of monomers suitably selected from butyl, ethyl acrylate, acrylonitrile and acrylic acid.
B層及びB層を形成する樹脂組成物が熱硬化性樹脂を熱可塑性樹脂とともに含む場合、当該熱硬化性樹脂としては、例えば、エポキシ樹脂、フェノール樹脂、アミノ樹脂、不飽和ポリエステル樹脂、ポリウレタン樹脂、シリコーン樹脂、熱硬化性ポリイミド樹脂等が挙げられる。上記熱硬化性樹脂は、一種のみを用いてもよいし、二種以上を用いてもよい。半導体チップの腐食原因となり得るイオン性不純物等の含有量の少ない傾向にあるという理由から、上記熱硬化性樹脂としてはエポキシ樹脂が好ましい。また、エポキシ樹脂の硬化剤としてはフェノール樹脂が好ましい。
When the resin composition which forms B layer and B layer includes a thermosetting resin together with a thermoplastic resin, as the thermosetting resin, for example, epoxy resin, phenol resin, amino resin, unsaturated polyester resin, polyurethane resin And silicone resins and thermosetting polyimide resins. The said thermosetting resin may use only 1 type, and may use 2 or more types. An epoxy resin is preferable as the thermosetting resin because the content of ionic impurities and the like which may cause corrosion of the semiconductor chip tends to be small. Moreover, as a hardening agent of an epoxy resin, a phenol resin is preferable.
上記エポキシ樹脂としては、上述のA層が含み得るエポキシ樹脂として例示されたものが挙げられる。上記エポキシ樹脂は、一種のみを用いてもよいし、二種以上を用いてもよい。中でも、硬化剤としてのフェノール樹脂との反応性に富み且つ耐熱性に優れることから、フェノールノボラック型エポキシ樹脂、オルソクレゾールノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、トリスヒドロキシフェニルメタン型エポキシ樹脂、テトラフェニロールエタン型エポキシ樹脂が好ましい。
As said epoxy resin, what was illustrated as an epoxy resin which the above-mentioned A layer may contain is mentioned. The said epoxy resin may use only 1 type, and may use 2 or more types. Among them, a phenol novolac epoxy resin, an ortho cresol novolac epoxy resin, a biphenyl epoxy resin, a trishydroxyphenylmethane epoxy resin, tetrapheny, since they are rich in reactivity with a phenol resin as a curing agent and excellent in heat resistance. Roll ethane type epoxy resin is preferred.
エポキシ樹脂の硬化剤として作用し得るフェノール樹脂としては、上述のA層が含み得るフェノール樹脂として例示されたものが挙げられる。上記フェノール樹脂は、一種のみを用いてもよいし、二種以上を用いてもよい。
As a phenol resin which can act as a hardening agent of an epoxy resin, what was illustrated as a phenol resin which above-mentioned A layer may contain is mentioned. The said phenol resin may use only 1 type, and may use 2 or more types.
B層及びB層を形成する樹脂組成物において、エポキシ樹脂とフェノール樹脂との硬化反応を充分に進行させるという観点からは、フェノール樹脂は、エポキシ樹脂成分中のエポキシ基1当量当たり、当該フェノール樹脂中の水酸基が好ましくは0.5~2.0当量、より好ましくは0.8~1.2当量となる量で含まれる。
In the resin composition for forming the layer B and the layer B, from the viewpoint of sufficiently advancing the curing reaction between the epoxy resin and the phenol resin, the phenol resin is the phenol resin per equivalent of epoxy group in the epoxy resin component. The hydroxyl group is preferably contained in an amount of 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents.
B層及びB層を形成する樹脂組成物が熱硬化性樹脂を含む場合、上記熱硬化性樹脂の含有割合は、B層を適切に硬化させるという観点から、B層又はB層を形成する樹脂組成物の総質量に対して、5~60質量%が好ましく、より好ましくは10~50質量%である。
When the resin composition for forming the layer B and the layer B includes a thermosetting resin, the content ratio of the thermosetting resin is the resin for forming the layer B or layer B from the viewpoint of appropriately curing the layer B. The content is preferably 5 to 60% by mass, more preferably 10 to 50% by mass, with respect to the total mass of the composition.
B層及びB層を形成する樹脂組成物が熱硬化性官能基を有する熱可塑性樹脂を含む場合、当該熱可塑性樹脂としては、上述のA層が含み得る熱硬化性官能基含有アクリル樹脂として例示されたものが挙げられる。中でも、グリシジル基含有アクリル樹脂、カルボキシ基含有アクリル樹脂が特に好ましい。また、熱硬化性官能基含有アクリル樹脂とともに硬化剤を含むことが好ましく、当該硬化剤としては、例えば、後述の粘着剤層形成用の放射線硬化性粘着剤が含み得る架橋剤として例示されたものが挙げられる。熱硬化性官能基含有アクリル樹脂における熱硬化性官能基がグリシジル基である場合には、硬化剤としてポリフェノール系化合物を用いることが好ましく、例えば上述の各種フェノール樹脂を用いることができる。
When the resin composition which forms B layer and B layer contains the thermoplastic resin which has a thermosetting functional group, as the thermoplastic resin concerned, it is illustrated as a thermosetting functional group content acrylic resin which the above-mentioned A layer may contain. Are listed. Among them, glycidyl group-containing acrylic resin and carboxy group-containing acrylic resin are particularly preferable. Moreover, it is preferable to include a curing agent together with the thermosetting functional group-containing acrylic resin, and as the curing agent, for example, those exemplified as a crosslinking agent which may be included in a radiation-curable pressure-sensitive adhesive for pressure-sensitive adhesive layer formation described later Can be mentioned. When the thermosetting functional group in the thermosetting functional group-containing acrylic resin is a glycidyl group, it is preferable to use a polyphenol compound as a curing agent, and, for example, various phenol resins described above can be used.
B層及びB層を形成する樹脂組成物は、熱硬化触媒(熱硬化促進剤)を含有していてもよい。熱硬化触媒を含むと、上記樹脂組成物の硬化にあたって樹脂成分の硬化反応を充分に進行させたり、硬化反応速度を高めることができる。上記熱硬化触媒としては、上述のA層が含み得る熱硬化触媒として例示されたものが挙げられる。上記熱硬化触媒は、一種のみを含有していてもよいし、二種以上を含有していてもよい。
The resin composition which forms B layer and B layer may contain the thermosetting catalyst (thermosetting accelerator). When the thermosetting catalyst is contained, the curing reaction of the resin component can be sufficiently advanced in curing of the resin composition, and the curing reaction rate can be increased. As said thermosetting catalyst, what was illustrated as a thermosetting catalyst which the above-mentioned A layer may contain is mentioned. The said thermosetting catalyst may contain only 1 type, and may contain 2 or more types.
B層及びB層を形成する樹脂組成物は、フィラーを含有していてもよい。フィラーを含むことにより、B層の弾性率や、降伏点強度、破断伸度等の物性を調整しやすい。フィラーとしては、上述のA層が含み得るフィラーとして例示されたものが挙げられる。上記フィラーは、一種のみを含有していてもよいし、二種以上を含有していてもよい。
The resin composition which forms B layer and B layer may contain the filler. By including the filler, physical properties such as the modulus of elasticity of the B layer, the strength at yield, the elongation at break, etc. can be easily adjusted. As a filler, what was illustrated as a filler which the above-mentioned A layer may contain is mentioned. The said filler may contain only 1 type, and may contain 2 or more types.
上記フィラーは、球状、針状、フレーク状等各種形状を有していてもよい。上記フィラーの平均粒径は、10μm以下が好ましく、より好ましくは8μm以下、さらに好ましくは7μm以下である。上記平均粒径は、0.1μm以上が好ましく、より好ましくは0.2μm以上である。上記平均粒径が10μm以下であると、小片化されることとなる背面密着フィルムについて割断性により優れる。
The filler may have various shapes such as sphere, needle, and flake. The average particle diameter of the filler is preferably 10 μm or less, more preferably 8 μm or less, and still more preferably 7 μm or less. The average particle diameter is preferably 0.1 μm or more, and more preferably 0.2 μm or more. When the average particle diameter is 10 μm or less, the back contact film which is to be fragmented is more excellent in cleavability.
上記フィラーの含有割合は、B層又はB層を形成する樹脂組成物の総質量に対して、10質量%以上が好ましく、より好ましくは15質量%以上、より好ましくは20質量%以上である。上記含有割合は、60質量%以下が好ましく、より好ましくは57質量%以下、さらに好ましくは55質量%以下である。
The content ratio of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and more preferably 20% by mass or more, based on the total mass of the B layer or the resin composition forming the B layer. The content ratio is preferably 60% by mass or less, more preferably 57% by mass or less, and still more preferably 55% by mass or less.
B層及びB層を形成する樹脂組成物は、必要に応じて他の成分を含んでいてもよい。上記他の成分としては、上述のA層が含み得る他の成分として例示された、難燃剤、シランカップリング剤、イオントラップ剤、黒色顔料以外の着色剤等が挙げられる。上記他の成分は、一種のみを使用してもよいし、二種以上を使用してもよい。
The resin composition which forms B layer and B layer may contain the other component as needed. As said other components, the flame retardant, the silane coupling agent, the ion trap agent, coloring agents other than a black pigment etc. which were illustrated as other components which the above-mentioned A layer may contain are mentioned. The other components may be used alone or in combination of two or more.
本発明の背面密着フィルムにおいて、内層となる層(A層以外の層)は、単層構造であってもよいし、多層構造であってもよい。上記内層となる層が単層構造である場合、上記内層となる層は接着剤層であるB層単層からなる。内層となる層が複層構造である場合、内層となる層が、全体として(すなわち、全ての複数の内層を1つの層と仮定して)、黒色顔料を含有し且つ波長1300nmにおける吸光度がA層よりも高い層であることが好ましい。内層となる層がこのような複層構造を有する場合、本発明の背面密着フィルムは、ワーク背面密着時において最表層がレーザーマーキング性に優れ、且つ、内層全体で赤外線をより充分に吸収することができ、赤外線遮蔽性によりいっそう優れる。
In the back contact film of the present invention, the layer to be the inner layer (layers other than the layer A) may have a single layer structure or a multilayer structure. When the layer to be the inner layer has a single-layer structure, the layer to be the inner layer is a single layer B which is an adhesive layer. When the layer to be the inner layer has a multilayer structure, the layer to be the inner layer contains a black pigment as a whole (that is, assuming all the plurality of inner layers as one layer), and the absorbance at a wavelength of 1300 nm is A Preferably, the layer is higher than the layer. When the layer to be the inner layer has such a multilayer structure, in the back contact film of the present invention, the outermost layer is excellent in laser marking property when the workpiece is in close contact with the back surface, and the entire inner layer absorbs infrared rays more sufficiently. Can be done, and the infrared shielding property is even better.
A層の厚さは、例えば2~180μm、好ましくは4~160μmである。
The thickness of the layer A is, for example, 2 to 180 μm, preferably 4 to 160 μm.
内層となる層の厚さ(合計の厚さ)は、例えば2~200μm、好ましくは4~160μm、より好ましくは6~100μm、さらに好ましくは8~80μmである。
The thickness (total thickness) of the layer to be the inner layer is, for example, 2 to 200 μm, preferably 4 to 160 μm, more preferably 6 to 100 μm, and still more preferably 8 to 80 μm.
内層となる層の厚さ(合計の厚さ)に対するA層の厚さの比は、1以上が好ましく、より好ましくは1.5以上、さらに好ましくは2以上である。上記比は、例えば8以下である。
The ratio of the thickness of the layer A to the thickness of the layer to be the inner layer (total thickness) is preferably 1 or more, more preferably 1.5 or more, and still more preferably 2 or more. The ratio is, for example, 8 or less.
本発明の背面密着フィルムの厚さは、例えば2~200μm、好ましくは4~160μm、より好ましくは6~100μm、さらに好ましくは10~80μmである。上記厚さが2μm以上であると、ワーク背面をより強固に保護できる。上記厚さが200μm以下であると、背面密着後のワークをより薄型とすることができる。
The thickness of the back contact film of the present invention is, for example, 2 to 200 μm, preferably 4 to 160 μm, more preferably 6 to 100 μm, and still more preferably 10 to 80 μm. When the thickness is 2 μm or more, the back surface of the workpiece can be protected more firmly. If the thickness is 200 μm or less, the workpiece after close contact can be made thinner.
[ダイシングテープ一体型半導体背面密着フィルム]
本発明の背面密着フィルムは、基材と粘着剤層とを含む積層構造を有するダイシングテープと、上記ダイシングテープにおける上記粘着剤層に剥離可能に密着している本発明の背面密着フィルムとを備えた形態、すなわち、ダイシングテープ一体型半導体背面密着フィルム(「ダイシングテープ一体型背面密着フィルム」と称する場合がある)として用いられてもよい。なお、上記ダイシングテープ一体型背面密着フィルムを「本発明のダイシングテープ一体型背面密着フィルム」と称する場合がある。本発明の背面密着フィルムをダイシングテープ一体型背面密着フィルムとして用いた場合、基板に貼付する際にシワをより生じにくくすることができる。 [Dicing tape integrated semiconductor back contact film]
The back contact film of the present invention comprises a dicing tape having a laminated structure including a substrate and a pressure sensitive adhesive layer, and the back contact film of the present invention which is in close contact with the pressure sensitive adhesive layer of the dicing tape. Alternatively, it may be used as a dicing tape-integrated semiconductor back contact film (sometimes referred to as "dicing tape integrated back contact film"). In addition, the said dicing tape integrated type back contact film may be called "the dicing tape integrated type back contact film of this invention." When the back contact film of the present invention is used as a dicing tape-integrated back contact film, it is possible to make wrinkles less likely to occur when sticking to a substrate.
本発明の背面密着フィルムは、基材と粘着剤層とを含む積層構造を有するダイシングテープと、上記ダイシングテープにおける上記粘着剤層に剥離可能に密着している本発明の背面密着フィルムとを備えた形態、すなわち、ダイシングテープ一体型半導体背面密着フィルム(「ダイシングテープ一体型背面密着フィルム」と称する場合がある)として用いられてもよい。なお、上記ダイシングテープ一体型背面密着フィルムを「本発明のダイシングテープ一体型背面密着フィルム」と称する場合がある。本発明の背面密着フィルムをダイシングテープ一体型背面密着フィルムとして用いた場合、基板に貼付する際にシワをより生じにくくすることができる。 [Dicing tape integrated semiconductor back contact film]
The back contact film of the present invention comprises a dicing tape having a laminated structure including a substrate and a pressure sensitive adhesive layer, and the back contact film of the present invention which is in close contact with the pressure sensitive adhesive layer of the dicing tape. Alternatively, it may be used as a dicing tape-integrated semiconductor back contact film (sometimes referred to as "dicing tape integrated back contact film"). In addition, the said dicing tape integrated type back contact film may be called "the dicing tape integrated type back contact film of this invention." When the back contact film of the present invention is used as a dicing tape-integrated back contact film, it is possible to make wrinkles less likely to occur when sticking to a substrate.
本発明のダイシングテープ一体型背面密着フィルムの一実施形態について、図2を用いて説明する。図2に示すダイシングテープ一体型背面密着フィルム1は、セパレータ30上に配置されている。ダイシングテープ一体型背面密着フィルム1は、半導体チップ背面密着膜形成用のチップ相当サイズのフィルムを伴う半導体チップを得るための過程で使用することのできるものであり、本発明の背面密着フィルム10とダイシングテープ20とを含む積層構造を有する。
One embodiment of the dicing tape-integrated back contact film of the present invention will be described with reference to FIG. The dicing tape-integrated back contact film 1 shown in FIG. 2 is disposed on the separator 30. The dicing tape-integrated back contact film 1 can be used in the process for obtaining a semiconductor chip with a film of a chip equivalent size for forming a back contact film of a semiconductor chip, and the back contact film 10 of the present invention and It has a laminated structure including the dicing tape 20.
(基材)
ダイシングテープにおける基材は、ダイシングテープやダイシングテープ一体型背面密着フィルムにおいて支持体として機能する要素である。基材としては、例えば、プラスチック基材(特にプラスチックフィルム)が挙げられる。上記基材は、単層であってもよいし、同種又は異種の基材の積層体であってもよい。 (Base material)
The substrate in the dicing tape is an element functioning as a support in the dicing tape and the dicing tape-integrated back contact film. As a base material, a plastic base material (especially plastic film) is mentioned, for example. The substrate may be a single layer, or a laminate of similar or different substrates.
ダイシングテープにおける基材は、ダイシングテープやダイシングテープ一体型背面密着フィルムにおいて支持体として機能する要素である。基材としては、例えば、プラスチック基材(特にプラスチックフィルム)が挙げられる。上記基材は、単層であってもよいし、同種又は異種の基材の積層体であってもよい。 (Base material)
The substrate in the dicing tape is an element functioning as a support in the dicing tape and the dicing tape-integrated back contact film. As a base material, a plastic base material (especially plastic film) is mentioned, for example. The substrate may be a single layer, or a laminate of similar or different substrates.
上記プラスチック基材を構成する樹脂としては、例えば、低密度ポリエチレン、直鎖状低密度ポリエチレン、中密度ポリエチレン、高密度ポリエチレン、超低密度ポリエチレン、ランダム共重合ポリプロピレン、ブロック共重合ポリプロピレン、ホモポリプロレン、ポリブテン、ポリメチルペンテン、エチレン-酢酸ビニル共重合体(EVA)、アイオノマー、エチレン-(メタ)アクリル酸共重合体、エチレン-(メタ)アクリル酸エステル(ランダム、交互)共重合体、エチレン-ブテン共重合体、エチレン-ヘキセン共重合体等のポリオレフィン樹脂;ポリウレタン;ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート、ポリブチレンテレフタレート(PBT)等のポリエステル;ポリカーボネート;ポリイミド;ポリエーテルエーテルケトン;ポリエーテルイミド;アラミド、全芳香族ポリアミド等のポリアミド;ポリフェニルスルフィド;フッ素樹脂;ポリ塩化ビニル;ポリ塩化ビニリデン;セルロース樹脂;シリコーン樹脂等が挙げられる。基材において良好な熱収縮性を確保して、ダイシング後の半導体チップ同士の離隔距離を広げるためのエキスパンド工程においてチップ離間距離をダイシングテープ又は基材の部分的熱収縮を利用して維持しやすい観点から、基材は、エチレン-酢酸ビニル共重合体又はポリ塩化ビニルを主成分として含むことが好ましい。なお、基材の主成分とは、構成成分中で最も大きな質量割合を占める成分とする。上記樹脂は、一種のみを使用してもよいし、二種以上を使用してもよい。粘着剤層が後述のように放射線硬化型粘着剤層である場合、基材は放射線透過性を有することが好ましい。
Examples of the resin constituting the plastic base include low density polyethylene, linear low density polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene , Polybutene, polymethylpentene, ethylene-vinyl acetate copolymer (EVA), ionomer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene- Polyolefin resins such as butene copolymer, ethylene-hexene copolymer; polyurethane; polyester such as polyethylene terephthalate (PET), polyethylene naphthalate, polybutylene terephthalate (PBT); polycarbonate; polyimide Riete ether ketone; polyetherimides; aramid, polyamide such as wholly aromatic polyamide; polyphenyl sulfide; fluorine resin, polyvinyl chloride, polyvinylidene chloride, cellulose resin, silicone resin, and the like. It is easy to maintain chip separation distance using partial heat contraction of dicing tape or base material in expanding process for securing good heat shrinkability in base material and widening separation distance between semiconductor chips after dicing. From the viewpoint, it is preferable that the substrate contains ethylene-vinyl acetate copolymer or polyvinyl chloride as a main component. In addition, with the main component of a base material, it is set as the component which occupies the largest mass ratio in a structural component. The said resin may use only 1 type and may use 2 or more types. When the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer as described later, the substrate preferably has radiation transparency.
基材がプラスチックフィルムである場合、上記プラスチックフィルムは、無配向であってもよく、少なくとも一方向(一軸方向、二軸方向等)に配向していてもよい。少なくとも一方向に配向している場合、プラスチックフィルムは当該少なくとも一方向に熱収縮可能となる。基材及びダイシングテープが等方的な熱収縮性を有するためには、基材は二軸配向フィルムであることが好ましい。なお、上記少なくとも一方向に配向したプラスチックフィルムは、無延伸のプラスチックフィルムを当該少なくとも一方向に延伸(一軸延伸、二軸延伸等)することにより得ることができる。基材及びダイシングテープは、加熱温度100℃及び加熱時間処理60秒の条件で行われる加熱処理試験における熱収縮率が、1~30%であることが好ましく、より好ましくは2~25%、さらに好ましくは3~20%、特に好ましくは5~20%である。上記熱収縮率は、MD方向及びTD方向の少なくとも一方向の熱収縮率であることが好ましい。
When the substrate is a plastic film, the plastic film may be non-oriented or may be oriented in at least one direction (uniaxial direction, biaxial direction, etc.). When oriented in at least one direction, the plastic film can be thermally shrunk in the at least one direction. In order for the substrate and the dicing tape to have isotropic heat shrinkability, the substrate is preferably a biaxially oriented film. The plastic film oriented in at least one direction can be obtained by stretching a non-stretched plastic film in at least one direction (uniaxial stretching, biaxial stretching, etc.). The base material and the dicing tape preferably have a thermal contraction rate of 1 to 30%, more preferably 2 to 25%, and further preferably 1 to 30% in a heat treatment test performed under conditions of a heating temperature of 100 ° C. and a heating time treatment of 60 seconds. It is preferably 3 to 20%, particularly preferably 5 to 20%. The heat shrinkage rate is preferably a heat shrinkage rate in at least one direction of the MD direction and the TD direction.
基材の粘着剤層側表面は、粘着剤層との密着性、保持性等を高める目的で、例えば、コロナ放電処理、プラズマ処理、サンドマット加工処理、オゾン暴露処理、火炎暴露処理、高圧電撃暴露処理、イオン化放射線処理等の物理的処理;クロム酸処理等の化学的処理;コーティング剤(下塗り剤)による易接着処理等の表面処理が施されていてもよい。また、帯電防止能を付与するため、金属、合金、これらの酸化物等を含む導電性の蒸着層を基材表面に設けてもよい。密着性を高めるための表面処理は、基材における粘着剤層側の表面全体に施されていることが好ましい。
The surface on the pressure-sensitive adhesive layer side of the substrate is, for example, corona discharge treatment, plasma treatment, sand mat processing, ozone exposure treatment, flame exposure treatment, high-piezoelectric shock treatment, for the purpose of enhancing adhesion and retention with the pressure-sensitive adhesive layer. Physical treatments such as exposure treatment and ionizing radiation treatment; chemical treatments such as chromic acid treatment; and surface treatments such as easy adhesion treatment with a coating agent (primer) may be applied. Moreover, in order to provide antistatic ability, you may provide the conductive vapor deposition layer containing a metal, an alloy, these oxides, etc. on the base-material surface. It is preferable that the surface treatment for improving adhesiveness is given to the whole surface by the side of the adhesive layer in a base material.
基材の厚さは、ダイシングテープ及びダイシングテープ一体型背面密着フィルムにおける支持体として基材が機能するための強度を確保するという観点からは、40μm以上が好ましく、より好ましくは50μm以上、さらに好ましくは55μm以上、特に好ましくは60μm以上である。また、ダイシングテープ及びダイシングテープ一体型背面密着フィルムにおいて適度な可撓性を実現するという観点からは、基材の厚さは、200μm以下が好ましく、より好ましくは180μm以下、さらに好ましくは150μm以下である。
The thickness of the substrate is preferably 40 μm or more, more preferably 50 μm or more, and still more preferably from the viewpoint of securing strength for the substrate to function as a support in the dicing tape and dicing tape-integrated back contact film. Is 55 μm or more, particularly preferably 60 μm or more. Further, from the viewpoint of realizing appropriate flexibility in the dicing tape and the dicing tape-integrated back contact film, the thickness of the substrate is preferably 200 μm or less, more preferably 180 μm or less, and still more preferably 150 μm or less. is there.
(粘着剤層)
ダイシングテープにおける粘着剤層は、ダイシングテープ一体型背面密着フィルムの使用過程において外部からの作用によって意図的に粘着力を低減させることが可能な粘着剤層(粘着力低減可能型粘着剤層)であってもよいし、ダイシングテープ一体型背面密着フィルムの使用過程において外部からの作用によっては粘着力がほとんど又は全く低減しない粘着剤層(粘着力非低減型粘着剤層)であってもよく、ダイシングテープ一体型背面密着フィルムを使用して個片化されるワークの個片化の手法や条件等に応じて適宜に選択することができる。粘着剤層は、単層構造を有していてもよいし、多層構造を有していてもよい。 (Pressure-sensitive adhesive layer)
The pressure-sensitive adhesive layer in the dicing tape is a pressure-sensitive adhesive layer (pressure-sensitive adhesive type pressure-sensitive adhesive layer) capable of intentionally reducing the adhesive force by the action from the outside in the use process of the dicing tape-integrated back contact film. It may be a pressure-sensitive adhesive layer (pressure-sensitive adhesive non-reducing pressure-sensitive adhesive layer) in which the adhesion is hardly or not reduced depending on the external action in the use process of the dicing tape-integrated back contact film. It can select suitably according to the method, conditions, etc. of singulation of the work separated into pieces using dicing tape integrated back contact film. The pressure-sensitive adhesive layer may have a single-layer structure or a multi-layer structure.
ダイシングテープにおける粘着剤層は、ダイシングテープ一体型背面密着フィルムの使用過程において外部からの作用によって意図的に粘着力を低減させることが可能な粘着剤層(粘着力低減可能型粘着剤層)であってもよいし、ダイシングテープ一体型背面密着フィルムの使用過程において外部からの作用によっては粘着力がほとんど又は全く低減しない粘着剤層(粘着力非低減型粘着剤層)であってもよく、ダイシングテープ一体型背面密着フィルムを使用して個片化されるワークの個片化の手法や条件等に応じて適宜に選択することができる。粘着剤層は、単層構造を有していてもよいし、多層構造を有していてもよい。 (Pressure-sensitive adhesive layer)
The pressure-sensitive adhesive layer in the dicing tape is a pressure-sensitive adhesive layer (pressure-sensitive adhesive type pressure-sensitive adhesive layer) capable of intentionally reducing the adhesive force by the action from the outside in the use process of the dicing tape-integrated back contact film. It may be a pressure-sensitive adhesive layer (pressure-sensitive adhesive non-reducing pressure-sensitive adhesive layer) in which the adhesion is hardly or not reduced depending on the external action in the use process of the dicing tape-integrated back contact film. It can select suitably according to the method, conditions, etc. of singulation of the work separated into pieces using dicing tape integrated back contact film. The pressure-sensitive adhesive layer may have a single-layer structure or a multi-layer structure.
粘着剤層が粘着力低減可能型粘着剤層である場合、ダイシングテープ一体型背面密着フィルムの製造過程や使用過程において、粘着剤層が相対的に高い粘着力を示す状態と相対的に低い粘着力を示す状態とを使い分けることが可能となる。例えば、ダイシングテープ一体型背面密着フィルムの製造過程でダイシングテープの粘着剤層に背面密着フィルムを貼り合わせる時や、ダイシングテープ一体型背面密着フィルムがダイシング工程に使用される時には、粘着剤層が相対的に高い粘着力を示す状態を利用して粘着剤層から背面密着フィルムの浮きを抑制・防止することが可能となる一方で、その後、ダイシングテープ一体型背面密着フィルムのダイシングテープから半導体チップをピックアップするためのピックアップ工程では、粘着剤層の粘着力を低減させることで、ピックアップを容易に行うことができる。
When the pressure-sensitive adhesive layer is a pressure-sensitive adhesive type pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer exhibits relatively high adhesion and relatively low adhesion in the manufacturing process and use process of the dicing tape-integrated back contact film. It becomes possible to use properly the state which shows power. For example, when attaching a back contact film to the adhesive layer of the dicing tape in the manufacturing process of the dicing tape integrated back contact film, or when the dicing tape integrated back contact film is used in the dicing step, the adhesive layer is relative While it becomes possible to suppress and prevent lifting of the back contact film from the pressure-sensitive adhesive layer by using a state that exhibits extremely high adhesive strength, thereafter, the semiconductor chip is obtained from the dicing tape with dicing tape integrated back contact film. In the pickup step for pickup, the pickup can be easily performed by reducing the adhesive force of the pressure-sensitive adhesive layer.
このような粘着力低減可能型粘着剤層を形成する粘着剤としては、例えば、放射線硬化性粘着剤、加熱発泡型粘着剤等が挙げられる。粘着力低減可能型粘着剤層を形成する粘着剤としては、一種の粘着剤を使用してもよいし、二種以上の粘着剤を使用してもよい。
Examples of the pressure-sensitive adhesive that can form such a pressure-sensitive adhesive type pressure-sensitive adhesive layer include a radiation-curable pressure-sensitive adhesive and a heat-foaming type pressure-sensitive adhesive. As an adhesive which forms an adhesive force reduction type adhesive layer, 1 type of adhesive may be used and 2 or more types of adhesive may be used.
上記放射線硬化性粘着剤としては、例えば、電子線、紫外線、α線、β線、γ線、又はX線の照射により硬化するタイプの粘着剤を用いることができ、紫外線照射によって硬化するタイプの粘着剤(紫外線硬化性粘着剤)を特に好ましく用いることができる。
As the radiation-curable pressure-sensitive adhesive, for example, a pressure-sensitive adhesive of a type which can be cured by irradiation of electron beam, ultraviolet light, α-ray, β-ray, γ-ray or X-ray can be used. A pressure sensitive adhesive (ultraviolet curable pressure sensitive adhesive) can be particularly preferably used.
上記放射線硬化性粘着剤としては、例えば、アクリル系ポリマー等のベースポリマーと、放射線重合性の炭素-炭素二重結合等の官能基を有する放射線重合性のモノマー成分やオリゴマー成分とを含有する添加型の放射線硬化性粘着剤が挙げられる。
The radiation-curable pressure-sensitive adhesive includes, for example, a base polymer such as an acrylic polymer, and a radiation-polymerizable monomer component or oligomer component having a functional group such as a radiation-polymerizable carbon-carbon double bond. Types of radiation curable adhesives.
上記アクリル系ポリマーは、ポリマーの構成単位として、アクリル系モノマー(分子中に(メタ)アクリロイル基を有するモノマー成分)に由来する構成単位を含むポリマーである。上記アクリル系ポリマーは、(メタ)アクリル酸エステルに由来する構成単位を質量割合で最も多く含むポリマーであることが好ましい。なお、アクリル系ポリマーは、一種のみを使用してもよいし、二種以上を使用してもよい。
The said acryl-type polymer is a polymer containing the structural unit derived from an acryl-type monomer (The monomer component which has a (meth) acryloyl group in a molecule | numerator) as a structural unit of a polymer. It is preferable that the said acryl-type polymer is a polymer which contains the structural unit originating in a (meth) acrylic acid ester most by mass ratio. In addition, an acryl-type polymer may use only 1 type, and may use 2 or more types.
上記(メタ)アクリル酸エステルとしては、例えば、アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルが挙げられる。アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルとしては、上述の背面密着フィルムが含み得るアクリル樹脂の構成単位として例示されたアルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルが挙げられる。上記アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルは、一種のみを使用してもよいし、二種以上を使用してもよい。上記アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルとしては、アクリル酸2-エチルヘキシル、アクリル酸ラウリルが好ましい。アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルによる粘着性等の基本特性を粘着剤層において適切に発現させるためには、アクリル系ポリマーを形成するための全モノマー成分における、アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルの割合は、40質量%以上が好ましく、より好ましくは60質量%以上である。
As said (meth) acrylic acid ester, the hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group is mentioned, for example. As a hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group, a hydrocarbon which may have an alkoxy group exemplified as a constituent unit of an acrylic resin which the above-mentioned back contact film may contain A group containing (meth) acrylic acid ester is mentioned. The hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group may be used alone or in combination of two or more. As the above-mentioned hydrocarbon group-containing (meth) acrylic acid ester which may have an alkoxy group, 2-ethylhexyl acrylate and lauryl acrylate are preferable. In order to properly express in the pressure-sensitive adhesive layer basic characteristics such as tackiness by the hydrocarbon group-containing (meth) acrylate which may have an alkoxy group, all monomer components for forming an acrylic polymer 40 mass% or more is preferable, and, as for the ratio of hydrocarbon group containing (meth) acrylic acid ester which may have an alkoxy group in these, 60 mass% or more is more preferable.
上記アクリル系ポリマーは、凝集力、耐熱性等の改質を目的として、上記アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルと共重合可能な他のモノマー成分に由来する構成単位を含んでいてもよい。上記他のモノマー成分としては、上述の背面密着フィルムが含み得るアクリル樹脂の構成単位として例示された他のモノマーが挙げられる。上記他のモノマー成分は、一種のみを使用してもよいし、二種以上を使用してもよい。アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルによる粘着性等の基本特性を粘着剤層において適切に発現させるためには、アクリル系ポリマーを形成するための全モノマー成分における、上記他のモノマー成分の合計割合は、60質量%以下が好ましく、より好ましくは40質量%以下である。
The above acrylic polymer is derived from another monomer component copolymerizable with the hydrocarbon group-containing (meth) acrylic acid ester which may have the above alkoxy group for the purpose of modifying cohesion and heat resistance etc. May be included. As said other monomer component, the other monomer illustrated as a structural unit of the acrylic resin which the above-mentioned back contact film may contain is mentioned. The other monomer components may be used alone or in combination of two or more. In order to properly express in the pressure-sensitive adhesive layer basic characteristics such as tackiness by the hydrocarbon group-containing (meth) acrylate which may have an alkoxy group, all monomer components for forming an acrylic polymer 60 mass% or less is preferable, and, as for the total ratio of the said other monomer component in ,, it is 40 mass% or less more preferably.
上記アクリル系ポリマーは、そのポリマー骨格中に架橋構造を形成するために、アクリル系ポリマーを形成するモノマー成分と共重合可能な多官能性モノマーに由来する構成単位を含んでいてもよい。上記多官能性モノマーとしては、例えば、ヘキサンジオールジ(メタ)アクリレート、(ポリ)エチレングリコールジ(メタ)アクリレート、(ポリ)プロピレングリコールジ(メタ)アクリレート、ネオペンチルグリコールジ(メタ)アクリレート、ペンタエリスリトールジ(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、エポキシ(メタ)アクリレート(例えば、ポリグリシジル(メタ)アクリレート)、ポリエステル(メタ)アクリレート、ウレタン(メタ)アクリレート等の分子内に(メタ)アクリロイル基と他の反応性官能基を有する単量体等が挙げられる。上記多官能性モノマーは、一種のみを使用してもよいし、二種以上を使用してもよい。アルコキシ基を有していてもよい炭化水素基含有(メタ)アクリル酸エステルによる粘着性等の基本特性を粘着剤層において適切に発現させるためには、アクリル系ポリマーを形成するための全モノマー成分における上記多官能性モノマーの割合は、40質量%以下が好ましく、より好ましくは30質量%以下である。
The above-mentioned acrylic polymer may contain a structural unit derived from a polyfunctional monomer copolymerizable with a monomer component forming the acrylic polymer in order to form a crosslinked structure in the polymer skeleton. Examples of the polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, penta Erythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate (eg, polyglycidyl (meth) acrylate), polyester The monomer etc. which have a (meth) acryloyl group and other reactive functional groups in the molecule | numerator of (meth) acrylate, urethane (meth) acrylate, etc. are mentioned. The polyfunctional monomers may be used alone or in combination of two or more. In order to properly express in the pressure-sensitive adhesive layer basic characteristics such as tackiness by the hydrocarbon group-containing (meth) acrylate which may have an alkoxy group, all monomer components for forming an acrylic polymer 40 mass% or less is preferable, and, as for the ratio of the said polyfunctional monomer in these, 30 mass% or less is more preferable.
アクリル系ポリマーは、アクリル系モノマーを含む一種以上のモノマー成分を重合に付すことにより得られる。重合方法としては、溶液重合、乳化重合、塊状重合、懸濁重合等が挙げられる。
An acrylic polymer is obtained by subjecting one or more monomer components containing an acrylic monomer to polymerization. As a polymerization method, solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like can be mentioned.
アクリル系ポリマーは、それを形成するための原料モノマーを重合して得ることができる。重合手法としては、例えば、溶液重合、乳化重合、塊状重合、懸濁重合等が挙げられる。アクリル系ポリマーの質量平均分子量は、10万以上が好ましく、より好ましくは20万~300万である。質量平均分子量が10万以上であると、粘着剤層中の低分子量物質が少ない傾向にあり、背面密着フィルムや半導体ウエハ等への汚染をより抑制することができる。
An acrylic polymer can be obtained by polymerizing a raw material monomer for forming it. Examples of the polymerization method include solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. The mass average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3,000,000. When the mass average molecular weight is 100,000 or more, the amount of low molecular weight substances in the pressure-sensitive adhesive layer tends to be small, and the contamination of the back contact film, the semiconductor wafer and the like can be further suppressed.
粘着剤層あるいは粘着剤層を形成する粘着剤は、架橋剤を含有していてもよい。例えば、ベースポリマーとしてアクリル系ポリマーを用いる場合、アクリル系ポリマーを架橋させ、粘着剤層中の低分子量物質をより低減させることができる。また、アクリル系ポリマーの質量平均分子量を高めることができる。上記架橋剤としては、例えば、ポリイソシアネート化合物、エポキシ化合物、ポリオール化合物(ポリフェノール系化合物等)、アジリジン化合物、メラミン化合物等が挙げられる。架橋剤を使用する場合、その使用量は、ベースポリマー100質量部に対して、5質量部程度以下が好ましく、より好ましくは0.1~5質量部である。
The pressure-sensitive adhesive layer or the pressure-sensitive adhesive forming the pressure-sensitive adhesive layer may contain a crosslinking agent. For example, when using an acrylic polymer as the base polymer, the acrylic polymer can be crosslinked to further reduce low molecular weight substances in the pressure-sensitive adhesive layer. In addition, the mass average molecular weight of the acrylic polymer can be increased. As said crosslinking agent, a polyisocyanate compound, an epoxy compound, a polyol compound (polyphenol type compound etc.), an aziridine compound, a melamine compound etc. are mentioned, for example. When a crosslinking agent is used, the amount thereof used is preferably about 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, with respect to 100 parts by mass of the base polymer.
上記放射線重合性のモノマー成分としては、例えば、ウレタン(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、ペンタエリスリトールトリ(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールモノヒドロキシペンタ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、1,4-ブタンジオールジ(メタ)アクリレート等挙げられる。上記放射線重合性のオリゴマー成分としては、例えば、ウレタン系、ポリエーテル系、ポリエステル系、ポリカーボネート系、ポリブタジエン系等の種々のオリゴマーが挙げられ、分子量が100~30000程度のものが好ましい。粘着剤層を形成する放射線硬化性粘着剤中の上記放射線重合性のモノマー成分及びオリゴマー成分の含有量は、上記ベースポリマー100質量部に対して、例えば5~500質量部、好ましくは40~150質量部程度である。また、添加型の放射線硬化性粘着剤としては、例えば特開昭60-196956号公報に開示のものを用いてもよい。
Examples of the radiation polymerizable monomer component include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxy penta ( Examples include meta) acrylates, dipentaerythritol hexa (meth) acrylates, and 1,4-butanediol di (meth) acrylates. Examples of the radiation polymerizable oligomer component include various oligomers such as urethane type, polyether type, polyester type, polycarbonate type and polybutadiene type, and those having a molecular weight of about 100 to 30000 are preferable. The content of the radiation polymerizable monomer component and the oligomer component in the radiation curable adhesive forming the adhesive layer is, for example, 5 to 500 parts by mass, preferably 40 to 150 parts by mass with respect to 100 parts by mass of the base polymer. It is about a mass part. Further, as the addition type radiation-curable pressure-sensitive adhesive, for example, those disclosed in JP-A-60-196956 may be used.
上記放射線硬化性粘着剤としては、放射線重合性の炭素-炭素二重結合等の官能基をポリマー側鎖や、ポリマー主鎖中、ポリマー主鎖末端に有するベースポリマーを含有する内在型の放射線硬化性粘着剤も挙げられる。このような内在型の放射線硬化性粘着剤を用いると、形成された粘着剤層内での低分子量成分の移動に起因する粘着特性の意図しない経時的変化を抑制することができる傾向がある。
The radiation-curable pressure-sensitive adhesive may be an internal radiation-curable resin containing a base polymer having a functional group such as a radiation-polymerizable carbon-carbon double bond or the like in the polymer side chain or in the polymer main chain at the polymer main chain terminal. There is also a sex adhesive. Use of such an internal-type radiation-curable pressure-sensitive adhesive tends to be able to suppress unintended changes in adhesion properties caused by the movement of low molecular weight components in the formed pressure-sensitive adhesive layer.
上記内在型の放射線硬化性粘着剤に含有されるベースポリマーとしては、アクリル系ポリマーが好ましい。アクリル系ポリマーへの放射線重合性の炭素-炭素二重結合の導入方法としては、例えば、第1の官能基を有するモノマー成分を含む原料モノマーを重合(共重合)させてアクリル系ポリマーを得た後、上記第1の官能基と反応し得る第2の官能基及び放射線重合性の炭素-炭素二重結合を有する化合物を、炭素-炭素二重結合の放射線重合性を維持したままアクリル系ポリマーに対して縮合反応又は付加反応させる方法が挙げられる。
An acrylic polymer is preferable as the base polymer contained in the intrinsic type radiation-curable pressure-sensitive adhesive. As a method for introducing a radiation polymerizable carbon-carbon double bond into an acrylic polymer, for example, an acrylic polymer was obtained by polymerizing (copolymerizing) a raw material monomer containing a monomer component having a first functional group. Thereafter, a compound having a second functional group capable of reacting with the first functional group and a radiation-polymerizable carbon-carbon double bond, while maintaining the radiation-polymerizable carbon-carbon double bond, is an acrylic polymer Methods for condensation reaction or addition reaction.
上記第1の官能基と上記第2の官能基の組み合わせとしては、例えば、カルボキシ基とエポキシ基、エポキシ基とカルボキシ基、カルボキシ基とアジリジル基、アジリジル基とカルボキシ基、ヒドロキシ基とイソシアネート基、イソシアネート基とヒドロキシ基等が挙げられる。これらの中でも、反応追跡の容易さの観点から、ヒドロキシ基とイソシアネート基の組み合わせ、イソシアネート基とヒドロキシ基の組み合わせが好ましい。中でも、反応性の高いイソシアネート基を有するポリマーを作製することは技術的難易度が高く、一方でヒドロキシ基を有するアクリル系ポリマーの作製及び入手の容易性の観点から、上記第1の官能基がヒドロキシ基であり、上記第2の官能基がイソシアネート基である組み合わせが好ましい。イソシアネート基及び放射性重合性の炭素-炭素二重結合を有する化合物、すなわち、放射線重合性の不飽和官能基含有イソシアネート化合物としては、例えば、メタクリロイルイソシアネート、2-メタクリロイルオキシエチルイソシアネート、m-イソプロペニル-α,α-ジメチルベンジルイソシアネート等が挙げられる。また、ヒドロキシ基を有するアクリル系ポリマーとしては、上述のヒドロキシ基含有モノマーや、2-ヒドロキシエチルビニルエーテル、4-ヒドロキシブチルビニルエーテル、ジエチレングルコールモノビニルエーテル等のエーテル系化合物に由来する構成単位を含むものが挙げられる。
Examples of combinations of the first functional group and the second functional group include a carboxy group and an epoxy group, an epoxy group and a carboxy group, a carboxy group and an aziridyl group, an aziridyl group and a carboxy group, a hydroxy group and an isocyanate group, An isocyanate group, a hydroxy group, etc. are mentioned. Among these, the combination of a hydroxy group and an isocyanate group and the combination of an isocyanate group and a hydroxy group are preferable from the viewpoint of easiness of reaction tracking. Among them, it is technically difficult to produce a polymer having a highly reactive isocyanate group, while the first functional group is preferably from the viewpoint of the ease of preparation and availability of an acrylic polymer having a hydroxy group. The combination which is a hydroxyl group and whose said 2nd functional group is an isocyanate group is preferable. As a compound having an isocyanate group and a radioactively polymerizable carbon-carbon double bond, that is, as a radiation polymerizable unsaturated functional group-containing isocyanate compound, for example, methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α, α-dimethylbenzyl isocyanate and the like can be mentioned. Moreover, as an acrylic polymer having a hydroxy group, one comprising a constitutional unit derived from the above-mentioned hydroxy group-containing monomer, or an ether compound such as 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether or diethylene glycol monovinyl ether Can be mentioned.
上記放射線硬化性粘着剤は、光重合開始剤を含有することが好ましい。上記光重合開始剤としては、例えば、α-ケトール系化合物、アセトフェノン系化合物、ベンゾインエーテル系化合物、ケタール系化合物、芳香族スルホニルクロリド系化合物、光活性オキシム系化合物、ベンゾフェノン系化合物、チオキサントン系化合物、カンファーキノン、ハロゲン化ケトン、アシルホスフィノキシド、アシルホスフォナート等が挙げられる。上記α-ケトール系化合物としては、例えば、4-(2-ヒドロキシエトキシ)フェニル(2-ヒドロキシ-2-プロピル)ケトン、α-ヒドロキシ-α,α’-ジメチルアセトフェノン、2-メチル-2-ヒドロキシプロピオフェノン、1-ヒドロキシシクロヘキシルフェニルケトン等が挙げられる。上記アセトフェノン系化合物としては、例えば、メトキシアセトフェノン、2,2-ジメトキシ-2-フェニルアセトフエノン、2,2-ジエトキシアセトフェノン、2-メチル-1-[4-(メチルチオ)-フェニル]-2-モルホリノプロパン-1-オン等が挙げられる。上記ベンゾインエーテル系化合物としては、例えば、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、アニソインメチルエーテル等が挙げられる。上記ケタール系化合物としては、例えば、ベンジルジメチルケタール等が挙げられる。上記芳香族スルホニルクロリド系化合物としては、例えば、2-ナフタレンスルホニルクロリド等が挙げられる。上記光活性オキシム系化合物としては、例えば、1-フェニル-1,2-プロパンジオン-2-(O-エトキシカルボニル)オキシム等が挙げられる。上記ベンゾフェノン系化合物としては、例えば、ベンゾフェノン、ベンゾイル安息香酸、3,3’-ジメチル-4-メトキシベンゾフェノン等が挙げられる。上記チオキサントン系化合物としては、例えば、チオキサントン、2-クロロチオキサントン、2-メチルチオキサントン、2,4-ジメチルチオキサントン、イソプロピルチオキサントン、2,4-ジクロロチオキサントン、2,4-ジエチルチオキサントン、2,4-ジイソプロピルチオキサントン等が挙げられる。放射線硬化性粘着剤中の光重合開始剤の含有量は、ベースポリマー100質量部に対して、例えば0.05~20質量部である。
The radiation-curable pressure-sensitive adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, Examples include camphor quinone, halogenated ketones, acyl phosphinoxides, and acyl phosphonates. Examples of the above α-ketol compounds include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylacetophenone, 2-methyl-2-hydroxy Propiophenone, 1-hydroxycyclohexyl phenyl ketone and the like can be mentioned. Examples of the above acetophenone compounds include methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- (methylthio) -phenyl] -2 And -morpholinopropan-1-one and the like. Examples of the above-mentioned benzoin ether compound include benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether and the like. Examples of the ketal compounds include benzyl dimethyl ketal and the like. Examples of the aromatic sulfonyl chloride compounds include 2-naphthalene sulfonyl chloride and the like. Examples of the photoactive oxime compounds include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime and the like. Examples of the benzophenone series compounds include benzophenone, benzoylbenzoic acid, 3,3'-dimethyl-4-methoxybenzophenone and the like. Examples of the above thioxanthone compounds include thioxanthone, 2-chlorothioxanthone, 2-methyl thioxanthone, 2,4-dimethyl thioxanthone, isopropyl thioxanthone, 2,4-dichloro thioxanthone, 2,4-diethyl thioxanthone, 2,4-diisopropyl Thioxanthone etc. are mentioned. The content of the photopolymerization initiator in the radiation curable pressure sensitive adhesive is, for example, 0.05 to 20 parts by mass with respect to 100 parts by mass of the base polymer.
上記加熱発泡型粘着剤は、加熱によって発泡や膨張をする成分(発泡剤、熱膨張性微小球等)を含有する粘着剤である。上記発泡剤としては、種々の無機系発泡剤や有機系発泡剤が挙げられる。上記無機系発泡剤としては、例えば、炭酸アンモニウム、炭酸水素アンモニウム、炭酸水素ナトリウム、亜硝酸アンモニウム、水素化ホウ素ナトリウム、アジド類等が挙げられる。上記有機系発泡剤としては、例えば、トリクロロモノフルオロメタン、ジクロロモノフルオロメタン等の塩フッ化アルカン;アゾビスイソブチロニトリル、アゾジカルボンアミド、バリウムアゾジカルボキシレート等のアゾ系化合物;パラトルエンスルホニルヒドラジド、ジフェニルスルホン-3,3’-ジスルホニルヒドラジド、4,4’-オキシビス(ベンゼンスルホニルヒドラジド)、アリルビス(スルホニルヒドラジド)等のヒドラジン系化合物;p-トルイレンスルホニルセミカルバジド、4,4’-オキシビス(ベンゼンスルホニルセミカルバジド)等のセミカルバジド系化合物;5-モルホリル-1,2,3,4-チアトリアゾール等のトリアゾール系化合物;N,N’-ジニトロソペンタメチレンテトラミン、N,N’-ジメチル-N,N’-ジニトロソテレフタルアミド等のN-ニトロソ系化合物等が挙げられる。上記熱膨張性微小球としては、例えば、加熱によって容易にガス化して膨張する物質が殻内に封入された構成の微小球が挙げられる。上記加熱によって容易にガス化して膨張する物質としては、例えば、イソブタン、プロパン、ペンタン等が挙げられる。加熱によって容易にガス化して膨張する物質をコアセルべーション法や界面重合法等によって殻形成物質内に封入することによって、熱膨張性微小球を作製することができる。上記殻形成物質としては、熱溶融性を示す物質や、封入物質の熱膨張の作用によって破裂し得る物質を用いることができる。そのような物質としては、例えば、塩化ビニリデン・アクリロニトリル共重合体、ポリビニルアルコール、ポリビニルブチラール、ポリメチルメタクリレート、ポリアクリロニトリル、ポリ塩化ビニリデン、ポリスルホン等が挙げられる。
The heat-foaming pressure-sensitive adhesive is a pressure-sensitive adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that foams or expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the inorganic foaming agent include ammonium carbonate, ammonium hydrogencarbonate, sodium hydrogencarbonate, ammonium nitrite, sodium borohydride, azides and the like. Examples of the organic foaming agent include salt-fluorinated alkanes such as trichloromonofluoromethane and dichloromonofluoromethane; azo compounds such as azobisisobutyronitrile, azodicarbonamide and barium azodicarboxylate; Hydrazine compounds such as sulfonylhydrazide, diphenylsulfone-3,3'-disulfonylhydrazide, 4,4'-oxybis (benzenesulfonylhydrazide), allylbis (sulfonylhydrazide) and the like; p-toluylenesulfonyl semicarbazide, 4,4'- Semicarbazide compounds such as oxybis (benzenesulfonyl semicarbazide); triazole compounds such as 5-morpholine-1,2,3,4-thiatriazole; N, N'-dinitrosopentamethylenetetramine, N, N'-di Chill -N, N-nitroso compounds such as N'- dinitrosoterephthalamide, and the like. Examples of the thermally expandable microspheres include microspheres having a configuration in which a substance that is easily gasified and expanded by heating is enclosed in a shell. Examples of the substance which is easily gasified and expanded by the above heating include isobutane, propane, pentane and the like. Thermally expandable microspheres can be produced by encapsulating a substance which is easily gasified and expanded by heating into a shell-forming substance by a coacervation method, an interfacial polymerization method or the like. As the above-mentioned shell-forming substance, a substance exhibiting heat melting property or a substance which can be ruptured by the action of thermal expansion of the encapsulating substance can be used. Examples of such a substance include vinylidene chloride / acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, polysulfone and the like.
上記粘着力非低減型粘着剤層としては、例えば、感圧型粘着剤層が挙げられる。なお、感圧型粘着剤層には、粘着力低減可能型粘着剤層に関して上述した放射線硬化性粘着剤から形成された粘着剤層を予め放射線照射によって硬化させつつも一定の粘着力を有する形態の粘着剤層が含まれる。粘着力非低減型粘着剤層を形成する粘着剤としては、一種の粘着剤を使用してもよいし、二種以上の粘着剤を使用してもよい。また、粘着剤層の全体が粘着力非低減型粘着剤層であってもよいし、一部が粘着力非低減型粘着剤層であってもよい。例えば、粘着剤層が単層構造を有する場合、粘着剤層の全体が粘着力非低減型粘着剤層であってもよいし、粘着剤層における特定の部位(例えば、ダイシングフレームの貼着対象領域であって、中央領域の外側にある領域)が粘着力非低減型粘着剤層であり、他の部位(例えば、半導体ウエハの分割体あるいは半導体ウエハの貼着対象領域である中央領域)が粘着力低減可能型粘着剤層であってもよい。また、粘着剤層が積層構造を有する場合、積層構造における全ての粘着剤層が粘着力非低減型粘着剤層であってもよいし、積層構造中の一部の粘着剤層が粘着力非低減型粘着剤層であってもよい。
Examples of the non-adhesive force-reducing pressure-sensitive adhesive layer include a pressure-sensitive pressure-sensitive adhesive layer. In the pressure-sensitive pressure-sensitive adhesive layer, a pressure-sensitive adhesive layer formed of the radiation-curable pressure-sensitive adhesive described above in relation to the pressure-sensitive adhesive type pressure-sensitive adhesive layer is cured in advance by radiation irradiation. An adhesive layer is included. As the pressure-sensitive adhesive forming the non-adhesive force-reducing type pressure-sensitive adhesive layer, one kind of pressure-sensitive adhesive may be used, or two or more kinds of pressure-sensitive adhesives may be used. Further, the whole of the pressure-sensitive adhesive layer may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or a part may be an adhesive force non-reducing type pressure-sensitive adhesive layer. For example, when the pressure-sensitive adhesive layer has a single-layer structure, the entire pressure-sensitive adhesive layer may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or a specific portion in the pressure-sensitive adhesive layer The region, which is the region outside the central region) is the non-adhesive force reducing type adhesive layer, and the other part (for example, the central region which is the divided object of the semiconductor wafer or the adhesion target region of the semiconductor wafer) The pressure-sensitive adhesive layer may be an adhesive force-reducible type adhesive layer. In addition, when the pressure-sensitive adhesive layer has a laminated structure, all the pressure-sensitive adhesive layers in the laminated structure may be a non-adhesive force reducing type pressure-sensitive adhesive layer, or some of the pressure-sensitive adhesive layers in the laminated structure have non-adhesiveness. It may be a reduced pressure-sensitive adhesive layer.
放射線硬化性粘着剤から形成された粘着剤層(放射線未照射放射線硬化型粘着剤層)を予め放射線照射によって硬化させた形態の粘着剤層(放射線照射済放射線硬化型粘着剤層)は、放射線照射によって粘着力が低減されているとしても、含有するポリマー成分に起因する粘着性を示し、ダイシング工程等においてダイシングテープの粘着剤層に最低限必要な粘着力を発揮することが可能である。放射線照射済放射線硬化型粘着剤層を用いる場合、粘着剤層の面広がり方向において、粘着剤層の全体が放射線照射済放射線硬化型粘着剤層であってもよく、粘着剤層の一部が放射線照射済放射線硬化型粘着剤層であり且つ他の部分が放射線未照射の放射線硬化型粘着剤層であってもよい。なお、本明細書において、「放射線硬化型粘着剤層」とは、放射線硬化性粘着剤から形成された粘着剤層をいい、放射線硬化性を有する放射線未照射放射線硬化型粘着剤層及び当該粘着剤層が放射線照射により硬化した後の放射線硬化済放射線硬化型粘着剤層の両方を含む。
A pressure-sensitive adhesive layer (irradiated radiation-curable pressure-sensitive adhesive layer) in a form in which a pressure-sensitive adhesive layer (a non-irradiated radiation-curable pressure-sensitive adhesive layer) formed of a radiation-curable pressure-sensitive adhesive is previously cured by radiation Even if the adhesive force is reduced by the irradiation, the adhesive property due to the contained polymer component is exhibited, and it is possible to exhibit the minimum adhesive force necessary for the adhesive layer of the dicing tape in the dicing step or the like. When the radiation-cured radiation-curable pressure-sensitive adhesive layer is used, the entire pressure-sensitive adhesive layer may be a radiation-cured radiation-curable pressure-sensitive adhesive layer in the surface spreading direction of the pressure-sensitive adhesive layer. The radiation-curable radiation-curable pressure-sensitive adhesive layer may be a radiation-cured pressure-sensitive adhesive layer other than the radiation-exposed radiation-curable pressure-sensitive adhesive layer. In the present specification, the "radiation-curable pressure-sensitive adhesive layer" refers to a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, and a radiation-curable non-radiation-curable radiation-curable pressure-sensitive adhesive layer and the adhesive The agent layer includes both of the radiation-curable radiation-curable pressure-sensitive adhesive layer after being cured by irradiation.
上記感圧型粘着剤層を形成する粘着剤としては、公知乃至慣用の感圧型の粘着剤を用いることができ、アクリル系ポリマーをベースポリマーとするアクリル系粘着剤やゴム系粘着剤を好ましく用いることができる。粘着剤層が感圧型の粘着剤としてアクリル系ポリマーを含有する場合、当該アクリル系ポリマーは、(メタ)アクリル酸エステルに由来する構成単位を質量割合で最も多い構成単位として含むポリマーであることが好ましい。上記アクリル系ポリマーとしては、例えば、上述の添加型の放射線硬化性粘着剤に含まれ得るアクリル系ポリマーとして説明されたアクリル系ポリマーを採用することができる。
As a pressure-sensitive adhesive for forming the pressure-sensitive pressure-sensitive adhesive layer, known pressure-sensitive pressure-sensitive adhesives can be used, and acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives containing acrylic polymers as base polymers Can. When the pressure-sensitive adhesive layer contains an acrylic polymer as a pressure-sensitive adhesive, the acrylic polymer is a polymer containing a constituent unit derived from (meth) acrylic acid ester as the largest constituent unit in mass ratio preferable. As the acrylic polymer, for example, an acrylic polymer described as an acrylic polymer that can be included in the above-described addition type radiation curable adhesive can be employed.
粘着剤層又は粘着剤層を形成する粘着剤は、上述の各成分以外に、架橋促進剤、粘着付与剤、老化防止剤、着色剤(顔料、染料等)等の公知乃至慣用の粘着剤層に用いられる添加剤が配合されていてもよい。上記着色剤としては、例えば、放射線照射により着色する化合物が挙げられる。放射線照射により着色する化合物を含有する場合、放射線照射された部分のみを着色することができる。上記放射線照射により着色する化合物は、放射線照射前には無色又は淡色であるが、放射線照射により有色となる化合物であり、例えば、ロイコ染料等が挙げられる。上記放射線照射により着色する化合物の使用量は特に限定されず適宜選択することができる。
The pressure-sensitive adhesive forming the pressure-sensitive adhesive layer or the pressure-sensitive adhesive layer may be any known or commonly used pressure-sensitive adhesive layer such as a crosslinking accelerator, tackifier, anti-aging agent, coloring agent (pigment, dye, etc.) The additive used for (1) may be mix | blended. As said coloring agent, the compound colored by irradiation with radiation is mentioned, for example. When it contains a compound that is colored by irradiation, only the irradiated part can be colored. The compound to be colored by the irradiation with radiation is a compound which is colorless or pale before irradiation with radiation but turns to a color by irradiation with radiation, and examples thereof include leuco dyes and the like. The amount of the compound to be colored by the above radiation irradiation is not particularly limited and can be appropriately selected.
粘着剤層の厚さは、特に限定されないが、粘着剤層が放射線硬化性粘着剤から形成された粘着剤層である場合に当該粘着剤層の放射線硬化の前後における背面密着フィルムに対する接着力のバランスをとる観点から、1~50μm程度が好ましく、より好ましくは2~30μm、さらに好ましくは3~25μmである。
The thickness of the pressure-sensitive adhesive layer is not particularly limited, but when the pressure-sensitive adhesive layer is a pressure-sensitive adhesive layer formed of a radiation-curable pressure-sensitive adhesive, adhesion of the pressure-sensitive adhesive layer to the back contact film before and after radiation curing From the viewpoint of balance, the thickness is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and still more preferably 3 to 25 μm.
本発明の背面密着フィルム及び本発明のダイシングテープ一体型背面密着フィルムは、背面密着フィルム表面にセパレータを有していてもよい。具体的には、本発明の背面密着フィルムごと、またはダイシングテープ一体型背面密着フィルムごとに、セパレータを有するシート状の形態であってもよいし、セパレータが長尺状であってその上に複数の背面密着フィルムまたは複数のダイシングテープ一体型背面密着フィルムが配され、且つ当該セパレータが巻き回されてロールの形態とされていてもよい。セパレータは、本発明の背面密着フィルムを被覆して保護するための要素であり、本発明の背面密着フィルム又は本発明のダイシングテープ一体型背面密着フィルムを使用する際には当該シートから剥がされる。セパレータとしては、例えば、ポリエチレンテレフタレート(PET)フィルム、ポリエチレンフィルム、ポリプロピレンフィルム、フッ素系剥離剤や長鎖アルキルアクリレート系剥離剤等の剥離剤により表面コートされたプラスチックフィルムや紙類等が挙げられる。
The back contact film of the present invention and the dicing tape-integrated back contact film of the present invention may have a separator on the back contact film surface. Specifically, each back contact film of the present invention or each dicing tape-integrated back contact film may be in the form of a sheet having a separator, or the separator may be elongated and a plurality thereof is provided thereon. The back contact film or the plurality of dicing tape-integrated back contact films may be disposed, and the separator may be wound into a roll. The separator is an element for covering and protecting the back contact film of the present invention, and is peeled from the sheet when using the back contact film of the present invention or the dicing tape-integrated back contact film of the present invention. Examples of the separator include plastic films and papers surface-coated with a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a release agent such as a fluorine-based release agent or a long chain alkyl acrylate release agent.
セパレータの厚さは、例えば10~200μm、好ましくは15~150μm、より好ましくは20~100μmである。上記厚さが10μm以上であると、セパレータの加工時に切り込みにより破断しにくい。上記厚さが200μm以下であると、基板及びフレームへの貼り合わせ時に、セパレータからダイシングテープ一体型背面密着フィルムをより剥離しやすい。
The thickness of the separator is, for example, 10 to 200 μm, preferably 15 to 150 μm, and more preferably 20 to 100 μm. When the thickness is 10 μm or more, it is difficult to be broken due to cutting at the time of processing of the separator. When the thickness is 200 μm or less, the dicing tape-integrated back contact film is more easily peeled off from the separator at the time of bonding to the substrate and the frame.
[背面密着フィルムの製造方法]
本発明の背面密着フィルムの一実施形態である背面密着フィルム10は、例えば、次の通りにして製造される。 [Method for producing back contact film]
Theback contact film 10 which is one embodiment of the back contact film of the present invention is manufactured, for example, as follows.
本発明の背面密着フィルムの一実施形態である背面密着フィルム10は、例えば、次の通りにして製造される。 [Method for producing back contact film]
The
図1に示す背面密着フィルム10の作製においては、まず、接着剤層(B層)11とレーザーマーク層(A層)12とを個別に作製する。接着剤層11は、接着剤層11形成用の樹脂組成物(接着剤組成物)をセパレータ上に塗布して樹脂組成物層を形成した後、加熱により脱溶媒や硬化を行い、該樹脂組成物層を固化させることによって作製することができる。接着剤層11の作製において、加熱温度は例えば90~150℃であり、加熱時間は例えば1~2分間である。樹脂組成物の塗布手法としては、例えば、ロール塗工、スクリーン塗工、グラビア塗工等が挙げられる。一方、レーザーマーク層12は、レーザーマーク層12形成用の樹脂組成物をセパレータ上に塗布して樹脂組成物層を形成した後、加熱により脱溶媒や硬化を行い、該樹脂組成物層を固化させることによって作製することができる。レーザーマーク層12の作製において、加熱温度は例えば90~160℃であり、加熱時間は例えば2~4分間である。以上のようにして、それぞれがセパレータを伴う形態で接着剤層11及びレーザーマーク層12を作製することができる。そして、これら接着剤層11及びレーザーマーク層12の露出面同士を貼り合わせ、次いで目的とする平面投影形状及び平面投影面積となるように打ち抜き加工を行い、接着剤層11とレーザーマーク層12との積層構造を有する背面密着フィルム10が作製される。
In the preparation of the back contact film 10 shown in FIG. 1, first, the adhesive layer (B layer) 11 and the laser mark layer (A layer) 12 are separately prepared. The adhesive layer 11 applies a resin composition (adhesive composition) for forming the adhesive layer 11 on a separator to form a resin composition layer, and then performs desolvation and curing by heating to form a resin composition. It can be produced by solidifying the product layer. In the preparation of the adhesive layer 11, the heating temperature is, for example, 90 to 150 ° C., and the heating time is, for example, 1 to 2 minutes. As a coating method of a resin composition, roll coating, screen coating, gravure coating etc. are mentioned, for example. On the other hand, the laser mark layer 12 applies a resin composition for forming the laser mark layer 12 on the separator to form a resin composition layer, and then performs desolvation and curing by heating to solidify the resin composition layer. It can be produced by In the preparation of the laser mark layer 12, the heating temperature is, for example, 90 to 160 ° C., and the heating time is, for example, 2 to 4 minutes. As described above, the adhesive layer 11 and the laser mark layer 12 can be produced in a form in which each is accompanied by a separator. Then, the exposed surfaces of the adhesive layer 11 and the laser mark layer 12 are attached to each other, and then punching processing is performed so as to obtain a target plane projection shape and a plane projection area, and the adhesive layer 11 and the laser mark layer 12 The back contact film 10 having a laminated structure of
[ダイシングテープ一体型背面密着フィルムの製造方法]
本発明のダイシングテープ一体型背面密着フィルムの一実施形態であるダイシングテープ一体型背面密着フィルム1は、例えば、次の通りにして製造される。 [Manufacturing method of dicing tape integrated type back contact film]
The dicing tape integrated back contact film 1 which is one embodiment of the dicing tape integrated back adhesion film of the present invention is manufactured, for example, as follows.
本発明のダイシングテープ一体型背面密着フィルムの一実施形態であるダイシングテープ一体型背面密着フィルム1は、例えば、次の通りにして製造される。 [Manufacturing method of dicing tape integrated type back contact film]
The dicing tape integrated back contact film 1 which is one embodiment of the dicing tape integrated back adhesion film of the present invention is manufactured, for example, as follows.
図2に示すダイシングテープ一体型背面密着フィルム1のダイシングテープ20については、用意した基材21上に粘着剤層22を設けることによって作製することができる。例えば樹脂製の基材21は、公知乃至慣用の製膜方法により製膜して得ることができる。上記製膜方法としては、例えば、カレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が挙げられる。基材21には、必要に応じて表面処理が施される。粘着剤層22の形成においては、例えば、粘着剤層形成用の粘着剤組成物を調製した後、まず、当該組成物を基材21上またはセパレータ上に塗布して粘着剤組成物層を形成する。粘着剤組成物の塗布手法としては、例えば、ロール塗工、スクリーン塗工、グラビア塗工等が挙げられる。次に、この粘着剤組成物層において、加熱によって、必要に応じて脱溶媒させ、また、必要に応じて架橋反応を生じさせる。加熱温度は例えば80~150℃であり、加熱時間は例えば0.5~5分間である。粘着剤層22がセパレータ上に形成される場合には、当該セパレータを伴う粘着剤層22を基材21に貼り合わせ、次いで目的とする平面投影形状(例えば、背面密着フィルム10と相似形状となる形状)及び平面投影面積となるように打ち抜き加工を行い、その後、セパレータが剥離される。これにより、基材21と粘着剤層22との積層構造を有するダイシングテープ20が作製される。
The dicing tape 20 of the dicing tape-integrated back contact film 1 shown in FIG. 2 can be produced by providing the adhesive layer 22 on the prepared base 21. For example, the base material 21 made of resin can be obtained by forming a film by a known or conventional film forming method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, a dry lamination method and the like. The substrate 21 is subjected to surface treatment as required. In the formation of the pressure-sensitive adhesive layer 22, for example, after preparing a pressure-sensitive adhesive composition for forming a pressure-sensitive adhesive layer, first, the composition is applied on a substrate 21 or a separator to form a pressure-sensitive adhesive composition layer. Do. Examples of the method for applying the pressure-sensitive adhesive composition include roll coating, screen coating, and gravure coating. Next, in the pressure-sensitive adhesive composition layer, the solvent is removed as necessary by heating, and a crosslinking reaction is caused as necessary. The heating temperature is, for example, 80 to 150 ° C., and the heating time is, for example, 0.5 to 5 minutes. When the pressure-sensitive adhesive layer 22 is formed on a separator, the pressure-sensitive adhesive layer 22 with the separator is attached to the substrate 21 and then the target plane projection shape (for example, the back contact film 10 has a similar shape Punching is performed so as to obtain a shape and a planar projected area, and then the separator is peeled off. Thereby, the dicing tape 20 which has a laminated structure of the base material 21 and the adhesive layer 22 is produced.
次に、ダイシングテープ20の粘着剤層22側に、上記で得られた背面密着フィルム10のレーザーマーク層12側を貼り合わせる。貼り合わせ温度は例えば10~50℃であり、貼り合わせ圧力(線圧)は例えば0.1~20kgf/cmである。粘着剤層22が上記放射線硬化性粘着剤層である場合、当該貼り合わせの前に粘着剤層22に対して紫外線等の放射線を照射してもよいし、当該貼り合わせの後に基材21の側から粘着剤層22に対して紫外線等の放射線を照射してもよい。或いは、ダイシングテープ一体型背面密着フィルム1の製造過程では、そのような放射線照射を行わなくてもよい(この場合、ダイシングテープ一体型背面密着フィルム1の使用過程で粘着剤層22を放射線硬化させることが可能である)。粘着剤層22が紫外線硬化型である場合、粘着剤層22を硬化させるための紫外線照射量は、例えば50~500mJ/cm2である。ダイシングテープ一体型背面密着フィルム1において粘着剤層22の粘着力低減措置としての照射が行われる領域(照射領域R)は、例えば図2に示すように、粘着剤層22における背面密着フィルム19貼り合わせ領域内のその周縁部を除く領域である。
Next, the laser mark layer 12 side of the back contact film 10 obtained above is bonded to the adhesive layer 22 side of the dicing tape 20. The bonding temperature is, for example, 10 to 50 ° C., and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm. When the pressure-sensitive adhesive layer 22 is the above-mentioned radiation-curable pressure-sensitive adhesive layer, the pressure-sensitive adhesive layer 22 may be irradiated with radiation such as ultraviolet light before the bonding, or after the bonding The adhesive layer 22 may be irradiated with radiation such as ultraviolet light from the side. Alternatively, in the process of manufacturing the dicing tape-integrated back contact film 1, such radiation may not be performed (in this case, the adhesive layer 22 is cured in the process of using the dicing tape-integrated back contact film 1) Is possible). In the case where the pressure-sensitive adhesive layer 22 is of an ultraviolet-curable type, the ultraviolet irradiation dose for curing the pressure-sensitive adhesive layer 22 is, for example, 50 to 500 mJ / cm 2 . The area (irradiated area R) where the irradiation as the adhesive force reducing measure of the pressure-sensitive adhesive layer 22 is performed in the dicing tape-integrated back-adhesion film 1 is, for example, as shown in FIG. It is an area | region except the peripheral part in the alignment area | region.
以上のようにして、例えば図1に示す本発明の背面密着フィルム10及び図2に示すダイシングテープ一体型背面密着フィルム1を作製することができる。なお、図2に示す本発明の背面密着フィルム10において、接着剤層11が内層であり、レーザーマーク層12が最表層である。
As described above, for example, the back contact film 10 of the present invention shown in FIG. 1 and the dicing tape integrated back contact film 1 shown in FIG. 2 can be produced. In the back contact film 10 of the present invention shown in FIG. 2, the adhesive layer 11 is an inner layer, and the laser mark layer 12 is an outermost layer.
[半導体装置の製造方法]
本発明のダイシングテープ一体型背面密着フィルムを用いて、半導体装置を製造することができる。具体的には、本発明のダイシングテープ一体型背面密着フィルムにおける背面密着フィルム側(特に接着剤層側)にワーク背面を貼り付ける工程(貼付工程)と、少なくともワークを含む対象を切削することにより個片化された半導体チップを得る工程(ダイシング工程)とを含む製造方法により、半導体装置を製造することができる。なお、図3~6は、図2に示すダイシングテープ一体型背面密着フィルム1を用いた半導体装置の製造方法における工程を表す。 [Method of Manufacturing Semiconductor Device]
A semiconductor device can be manufactured using the dicing tape-integrated back contact film of the present invention. Specifically, the step of sticking the back surface of the work to the back adhesion film side (especially the adhesive layer side) in the dicing tape-integrated back adhesion film of the present invention (sticking step) and cutting the object including at least the work The semiconductor device can be manufactured by the manufacturing method including the step of obtaining the singulated semiconductor chip (dicing step). 3 to 6 show steps in a method of manufacturing a semiconductor device using the dicing tape-integrated back contact film 1 shown in FIG.
本発明のダイシングテープ一体型背面密着フィルムを用いて、半導体装置を製造することができる。具体的には、本発明のダイシングテープ一体型背面密着フィルムにおける背面密着フィルム側(特に接着剤層側)にワーク背面を貼り付ける工程(貼付工程)と、少なくともワークを含む対象を切削することにより個片化された半導体チップを得る工程(ダイシング工程)とを含む製造方法により、半導体装置を製造することができる。なお、図3~6は、図2に示すダイシングテープ一体型背面密着フィルム1を用いた半導体装置の製造方法における工程を表す。 [Method of Manufacturing Semiconductor Device]
A semiconductor device can be manufactured using the dicing tape-integrated back contact film of the present invention. Specifically, the step of sticking the back surface of the work to the back adhesion film side (especially the adhesive layer side) in the dicing tape-integrated back adhesion film of the present invention (sticking step) and cutting the object including at least the work The semiconductor device can be manufactured by the manufacturing method including the step of obtaining the singulated semiconductor chip (dicing step). 3 to 6 show steps in a method of manufacturing a semiconductor device using the dicing tape-integrated back contact film 1 shown in FIG.
(貼付工程)
上記貼付工程において本発明のダイシングテープ一体型背面密着フィルムにおける背面密着フィルム側(特に接着剤層側)に貼り付けるワークとしては、半導体ウエハや、複数の半導体チップがそれぞれ背面及び/又は側面が樹脂により封止された封止体等が挙げられる。そして、例えば図3(a)に示すように、ウエハ加工用テープT1に保持された半導体ウエハ40を、ダイシングテープ一体型背面密着フィルム1の本発明の背面密着フィルム10(特に、接着剤層11)に対して貼り合わせる。半導体ウエハ40の表面には、フリップチップ実装するためのバンプ(図示略)が備えられている。この後、図3(b)に示すように、半導体ウエハ40からウエハ加工用テープT1を剥がす。 (Pasting process)
As a work to be attached to the back contact film side (particularly the adhesive layer side) of the dicing tape-integrated back contact film of the present invention in the pasting step, a semiconductor wafer and a plurality of semiconductor chips have their back surfaces and / or side surfaces made of resin. And the like. Then, for example, as shown in FIG. 3 (a), thesemiconductor wafer 40 held by the wafer processing tape T1 is attached to the back contact film 10 (particularly the adhesive layer 11) of the dicing tape integrated back contact film 1 of the present invention. Stick to). Bumps (not shown) for flip chip mounting are provided on the surface of the semiconductor wafer 40. Thereafter, as shown in FIG. 3B, the wafer processing tape T1 is peeled off from the semiconductor wafer 40.
上記貼付工程において本発明のダイシングテープ一体型背面密着フィルムにおける背面密着フィルム側(特に接着剤層側)に貼り付けるワークとしては、半導体ウエハや、複数の半導体チップがそれぞれ背面及び/又は側面が樹脂により封止された封止体等が挙げられる。そして、例えば図3(a)に示すように、ウエハ加工用テープT1に保持された半導体ウエハ40を、ダイシングテープ一体型背面密着フィルム1の本発明の背面密着フィルム10(特に、接着剤層11)に対して貼り合わせる。半導体ウエハ40の表面には、フリップチップ実装するためのバンプ(図示略)が備えられている。この後、図3(b)に示すように、半導体ウエハ40からウエハ加工用テープT1を剥がす。 (Pasting process)
As a work to be attached to the back contact film side (particularly the adhesive layer side) of the dicing tape-integrated back contact film of the present invention in the pasting step, a semiconductor wafer and a plurality of semiconductor chips have their back surfaces and / or side surfaces made of resin. And the like. Then, for example, as shown in FIG. 3 (a), the
(熱硬化工程)
本発明の背面密着フィルムが熱硬化性の接着剤層を有する場合、上記貼付工程の後に、背面密着フィルムにおける接着剤層を熱硬化させる工程(熱硬化工程)を有することが好ましい。例えば、上記熱硬化工程では、接着剤層11を熱硬化させるための加熱処理を行う。加熱温度は、80~200℃が好ましく、より好ましくは100~150℃である。加熱時間は、0.5~5時間が好ましく、より好ましくは1~3時間である。加熱処理は、具体的には例えば120℃で2時間行う。熱硬化工程では、接着剤層11の熱硬化により、ダイシングテープ一体型背面密着フィルム1の本発明の背面密着フィルム10と半導体ウエハ40との密着力が高まり、ダイシングテープ一体型背面密着フィルム1及び本発明の背面密着フィルム10の対半導体ウエハ固定保持力が高まる。また、本発明の背面密着フィルムが熱硬化性の接着剤層を有しない場合、例えば50~100℃の範囲で数時間ベーキング処理してもよく、これにより、接着剤層界面の濡れ性が向上し、対半導体ウエハ固定保持力が高まる。 (Thermal curing process)
When the back contact film of the present invention has a thermosetting adhesive layer, it is preferable to have a step (heat curing step) of heat curing the adhesive layer in the back contact film after the sticking step. For example, in the heat curing step, heat treatment for heat curing theadhesive layer 11 is performed. The heating temperature is preferably 80 to 200 ° C., more preferably 100 to 150 ° C. The heating time is preferably 0.5 to 5 hours, more preferably 1 to 3 hours. Specifically, the heat treatment is performed, for example, at 120 ° C. for 2 hours. In the heat curing step, the adhesion between the back adhesion film 10 of the present invention and the semiconductor wafer 40 of the dicing tape integrated back adhesion film 1 is enhanced by the heat curing of the adhesive layer 11, and the dicing tape integrated back adhesion film 1 and The semiconductor wafer fixed holding power of the back contact film 10 of the present invention is enhanced. In addition, when the back contact film of the present invention does not have a thermosetting adhesive layer, baking may be performed, for example, in the range of 50 to 100 ° C. for several hours, whereby the wettability of the adhesive layer interface is improved. And the semiconductor wafer fixed holding power is increased.
本発明の背面密着フィルムが熱硬化性の接着剤層を有する場合、上記貼付工程の後に、背面密着フィルムにおける接着剤層を熱硬化させる工程(熱硬化工程)を有することが好ましい。例えば、上記熱硬化工程では、接着剤層11を熱硬化させるための加熱処理を行う。加熱温度は、80~200℃が好ましく、より好ましくは100~150℃である。加熱時間は、0.5~5時間が好ましく、より好ましくは1~3時間である。加熱処理は、具体的には例えば120℃で2時間行う。熱硬化工程では、接着剤層11の熱硬化により、ダイシングテープ一体型背面密着フィルム1の本発明の背面密着フィルム10と半導体ウエハ40との密着力が高まり、ダイシングテープ一体型背面密着フィルム1及び本発明の背面密着フィルム10の対半導体ウエハ固定保持力が高まる。また、本発明の背面密着フィルムが熱硬化性の接着剤層を有しない場合、例えば50~100℃の範囲で数時間ベーキング処理してもよく、これにより、接着剤層界面の濡れ性が向上し、対半導体ウエハ固定保持力が高まる。 (Thermal curing process)
When the back contact film of the present invention has a thermosetting adhesive layer, it is preferable to have a step (heat curing step) of heat curing the adhesive layer in the back contact film after the sticking step. For example, in the heat curing step, heat treatment for heat curing the
(レーザーマーキング工程)
上記半導体装置の製造方法は、レーザーマーク層に対し、ダイシングテープの基材側からレーザーを照射してレーザーマーキングを行う工程(レーザーマーキング工程)を有することが好ましい。上記熱硬化工程を行う場合、レーザーマーキング工程は、上記熱硬化工程の後に行うことが好ましい。具体的には、レーザーマーキング工程では、例えばレーザーマーク層12に対し、ダイシングテープ20の基材21の側からレーザーを照射してレーザーマーキングを行う。このレーザーマーキング工程によって、半導体チップごとに、文字情報や図形情報等の各種情報を刻印することができる。レーザーマーキング工程では、一のレーザーマーキングプロセスにおいて、複数の半導体チップに対して一括的に効率よくレーザーマーキングを行うことが可能である。レーザーマーキング工程で用いられるレーザーとしては、例えば、気体レーザー、固体レーザーが挙げられる。気体レーザーとしては、例えば、炭酸ガスレーザー(CO2レーザー)、エキシマレーザーが挙げられる。固体レーザーとしては、例えばNd:YAGレーザーが挙げられる。 (Laser marking process)
The method for manufacturing a semiconductor device preferably includes a step (laser marking step) of laser marking by irradiating a laser from the substrate side of the dicing tape to the laser mark layer. When performing the said thermosetting process, it is preferable to perform a laser marking process after the said thermosetting process. Specifically, in the laser marking step, for example, laser marking is performed by irradiating a laser from the side of thebase 21 of the dicing tape 20 to the laser mark layer 12. By the laser marking process, various information such as character information and graphic information can be imprinted on each semiconductor chip. In the laser marking process, it is possible to perform laser marking efficiently on a plurality of semiconductor chips collectively in one laser marking process. As a laser used at a laser marking process, a gas laser and a solid state laser are mentioned, for example. Examples of the gas laser include a carbon dioxide gas laser (CO 2 laser) and an excimer laser. As a solid state laser, Nd: YAG laser is mentioned, for example.
上記半導体装置の製造方法は、レーザーマーク層に対し、ダイシングテープの基材側からレーザーを照射してレーザーマーキングを行う工程(レーザーマーキング工程)を有することが好ましい。上記熱硬化工程を行う場合、レーザーマーキング工程は、上記熱硬化工程の後に行うことが好ましい。具体的には、レーザーマーキング工程では、例えばレーザーマーク層12に対し、ダイシングテープ20の基材21の側からレーザーを照射してレーザーマーキングを行う。このレーザーマーキング工程によって、半導体チップごとに、文字情報や図形情報等の各種情報を刻印することができる。レーザーマーキング工程では、一のレーザーマーキングプロセスにおいて、複数の半導体チップに対して一括的に効率よくレーザーマーキングを行うことが可能である。レーザーマーキング工程で用いられるレーザーとしては、例えば、気体レーザー、固体レーザーが挙げられる。気体レーザーとしては、例えば、炭酸ガスレーザー(CO2レーザー)、エキシマレーザーが挙げられる。固体レーザーとしては、例えばNd:YAGレーザーが挙げられる。 (Laser marking process)
The method for manufacturing a semiconductor device preferably includes a step (laser marking step) of laser marking by irradiating a laser from the substrate side of the dicing tape to the laser mark layer. When performing the said thermosetting process, it is preferable to perform a laser marking process after the said thermosetting process. Specifically, in the laser marking step, for example, laser marking is performed by irradiating a laser from the side of the
(ダイシング工程)
上記ダイシング工程では、例えば図4に示すように、ダイシングテープ一体型背面密着フィルム1における粘着剤層22上にダイシングテープを押さえつけ固定するためのフレーム(ダイシングフレーム)51を貼り付けてダイシング装置の保持具52に保持させた後、上記ダイシング装置の備えるダイシングブレードによる切削加工を行う。図4では、切削箇所を模式的に太線で表す。ダイシング工程では、半導体ウエハが半導体チップ41に個片化され、これとともに、ダイシングテープ一体型背面密着フィルム1の本発明の背面密着フィルム10が小片のフィルム10’に切断される。これにより、フィルム10’を伴う半導体チップ41、即ちフィルム10’付き半導体チップ41が得られる。 (Dicing process)
In the dicing step, for example, as shown in FIG. 4, a frame (dicing frame) 51 for pressing and fixing the dicing tape is stuck on theadhesive layer 22 in the dicing tape integrated back contact film 1 and holding of the dicing apparatus After being held by the tool 52, cutting with a dicing blade provided in the dicing apparatus is performed. In FIG. 4, the cut portion is schematically represented by a thick line. In the dicing step, the semiconductor wafer is singulated into semiconductor chips 41, and the back contact film 10 of the present invention of the dicing tape integrated back contact film 1 is cut into small pieces of film 10 '. Thereby, the semiconductor chip 41 with the film 10 ′, ie, the semiconductor chip 41 with the film 10 ′ is obtained.
上記ダイシング工程では、例えば図4に示すように、ダイシングテープ一体型背面密着フィルム1における粘着剤層22上にダイシングテープを押さえつけ固定するためのフレーム(ダイシングフレーム)51を貼り付けてダイシング装置の保持具52に保持させた後、上記ダイシング装置の備えるダイシングブレードによる切削加工を行う。図4では、切削箇所を模式的に太線で表す。ダイシング工程では、半導体ウエハが半導体チップ41に個片化され、これとともに、ダイシングテープ一体型背面密着フィルム1の本発明の背面密着フィルム10が小片のフィルム10’に切断される。これにより、フィルム10’を伴う半導体チップ41、即ちフィルム10’付き半導体チップ41が得られる。 (Dicing process)
In the dicing step, for example, as shown in FIG. 4, a frame (dicing frame) 51 for pressing and fixing the dicing tape is stuck on the
(放射線照射工程)
上記半導体装置の製造方法は、基材側から粘着剤層に対して放射線を照射する工程(放射線照射工程)を有していてもよい。ダイシングテープの粘着剤層が放射線硬化性粘着剤により形成された層である場合には、ダイシングテープ一体型背面密着フィルムの製造過程での上述の放射線照射に代えて、上述のダイシング工程の後に、基材の側から粘着剤層に対して紫外線等の放射線を照射してもよい。照射量は、例えば50~500mJ/cm2である。ダイシングテープ一体型背面密着フィルムにおいて粘着剤層の粘着力低減措置としての照射が行われる領域(図2に示す照射領域R)は、例えば、粘着剤層における背面密着フィルム貼り合わせ領域内のその周縁部を除く領域である。 (Irradiation process)
The method for manufacturing a semiconductor device may have a step of irradiating the pressure-sensitive adhesive layer from the substrate side with radiation (radiation irradiation step). When the pressure-sensitive adhesive layer of the dicing tape is a layer formed of a radiation-curable pressure-sensitive adhesive, after the above-mentioned dicing process, the above-mentioned radiation irradiation in the production process of the dicing tape-integrated back contact film is replaced. The adhesive layer may be irradiated with radiation such as ultraviolet light from the side of the substrate. The irradiation dose is, for example, 50 to 500 mJ / cm 2 . The area (irradiated area R shown in FIG. 2) where the irradiation as the adhesive force reduction measure of the pressure-sensitive adhesive layer is performed in the dicing tape-integrated back-adhesion film is, for example, the peripheral edge thereof in the back-adhesion film bonding area of the pressure-sensitive adhesive layer. This is an area excluding parts.
上記半導体装置の製造方法は、基材側から粘着剤層に対して放射線を照射する工程(放射線照射工程)を有していてもよい。ダイシングテープの粘着剤層が放射線硬化性粘着剤により形成された層である場合には、ダイシングテープ一体型背面密着フィルムの製造過程での上述の放射線照射に代えて、上述のダイシング工程の後に、基材の側から粘着剤層に対して紫外線等の放射線を照射してもよい。照射量は、例えば50~500mJ/cm2である。ダイシングテープ一体型背面密着フィルムにおいて粘着剤層の粘着力低減措置としての照射が行われる領域(図2に示す照射領域R)は、例えば、粘着剤層における背面密着フィルム貼り合わせ領域内のその周縁部を除く領域である。 (Irradiation process)
The method for manufacturing a semiconductor device may have a step of irradiating the pressure-sensitive adhesive layer from the substrate side with radiation (radiation irradiation step). When the pressure-sensitive adhesive layer of the dicing tape is a layer formed of a radiation-curable pressure-sensitive adhesive, after the above-mentioned dicing process, the above-mentioned radiation irradiation in the production process of the dicing tape-integrated back contact film is replaced. The adhesive layer may be irradiated with radiation such as ultraviolet light from the side of the substrate. The irradiation dose is, for example, 50 to 500 mJ / cm 2 . The area (irradiated area R shown in FIG. 2) where the irradiation as the adhesive force reduction measure of the pressure-sensitive adhesive layer is performed in the dicing tape-integrated back-adhesion film is, for example, the peripheral edge thereof in the back-adhesion film bonding area of the pressure-sensitive adhesive layer. This is an area excluding parts.
(ピックアップ工程)
上記半導体装置の製造方法は、フィルム付き半導体チップをピックアップする工程(ピックアップ工程)を有することが好ましい。上記ピックアップ工程は、例えばフィルム10’付き半導体チップ41を伴うダイシングテープ20における半導体チップ41側を水等の洗浄液を使用して洗浄するクリーニング工程や、フィルム10’付き半導体チップ41間の離隔距離を広げるためのエキスパンド工程を、必要に応じて経た後に行ってもよい。例えば、図5に示すように、フィルム10’付き半導体チップ41をダイシングテープ20からピックアップする。例えば、ダイシングフレーム51付きのダイシングテープ20を装置の保持具52に保持させた状態で、ピックアップ対象のフィルム10’付き半導体チップ41について、ダイシングテープ20の図中下側においてピックアップ機構のピン部材53を上昇させてダイシングテープ20を介して突き上げた後、吸着治具54によって吸着保持する。ピックアップ工程において、ピン部材53の突き上げ速度は例えば1~100mm/秒であり、ピン部材53の突き上げ量は例えば50~3000μmである。 (Pickup process)
Preferably, the method of manufacturing a semiconductor device includes a step of picking up a semiconductor chip with a film (pickup step). The pick-up step is, for example, a cleaning step of cleaning thesemiconductor chip 41 side of the dicing tape 20 with the semiconductor chip 41 with the film 10 ′ using a cleaning liquid such as water, or a separation distance between the semiconductor chips 41 with the film 10 ′. An expanding step for expanding may be performed after passing through if necessary. For example, as shown in FIG. 5, the semiconductor chip 41 with the film 10 ′ is picked up from the dicing tape 20. For example, with the dicing tape 20 with the dicing frame 51 held by the holder 52 of the apparatus, the pin member 53 of the pickup mechanism on the lower side of the dicing tape 20 in the figure of the semiconductor chip 41 with film 10 'to be picked up. Is raised and pushed up through the dicing tape 20, and then held by suction by the suction jig 54. In the pickup step, the push-up speed of the pin member 53 is, for example, 1 to 100 mm / sec, and the push-up amount of the pin member 53 is, for example, 50 to 3000 μm.
上記半導体装置の製造方法は、フィルム付き半導体チップをピックアップする工程(ピックアップ工程)を有することが好ましい。上記ピックアップ工程は、例えばフィルム10’付き半導体チップ41を伴うダイシングテープ20における半導体チップ41側を水等の洗浄液を使用して洗浄するクリーニング工程や、フィルム10’付き半導体チップ41間の離隔距離を広げるためのエキスパンド工程を、必要に応じて経た後に行ってもよい。例えば、図5に示すように、フィルム10’付き半導体チップ41をダイシングテープ20からピックアップする。例えば、ダイシングフレーム51付きのダイシングテープ20を装置の保持具52に保持させた状態で、ピックアップ対象のフィルム10’付き半導体チップ41について、ダイシングテープ20の図中下側においてピックアップ機構のピン部材53を上昇させてダイシングテープ20を介して突き上げた後、吸着治具54によって吸着保持する。ピックアップ工程において、ピン部材53の突き上げ速度は例えば1~100mm/秒であり、ピン部材53の突き上げ量は例えば50~3000μmである。 (Pickup process)
Preferably, the method of manufacturing a semiconductor device includes a step of picking up a semiconductor chip with a film (pickup step). The pick-up step is, for example, a cleaning step of cleaning the
(フリップチップ実装工程)
上記半導体装置の製造方法は、ピックアップ工程を経た後、フィルム付き半導体チップ41をフリップチップ実装する工程(フリップチップ工程)を有することが好ましい。例えば、図6に示すようにフィルム10’付き半導体チップ41が実装基板61に対してフリップチップ実装される。実装基板61としては、例えば、リードフレーム、TAB(Tape Automated Bonding)フィルム、配線基板が挙げられる。フリップチップ実装により、半導体チップ41は、実装基板61に対してバンプ62を介して電気的に接続される。具体的には、半導体チップ41がその回路形成面側に有する基板(電極パッド)(図示略)と実装基板61の有する端子部(図示略)とが、バンプ62を介して電気的に接続される。バンプ62は、例えばハンダバンプである。また、チップ41と実装基板61との間には、熱硬化性のアンダーフィル剤63が介在している。 (Flip chip mounting process)
The method of manufacturing the semiconductor device preferably includes a step (flip chip step) of flip chip mounting thesemiconductor chip 41 with a film after the pickup step. For example, as shown in FIG. 6, the semiconductor chip 41 with the film 10 ′ is flip-chip mounted on the mounting substrate 61. Examples of the mounting substrate 61 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring substrate. The semiconductor chip 41 is electrically connected to the mounting substrate 61 via the bumps 62 by flip chip mounting. Specifically, a substrate (electrode pad) (not shown) that the semiconductor chip 41 has on the circuit formation side and a terminal portion (not shown) that the mounting substrate 61 has are electrically connected via the bumps 62. Ru. The bumps 62 are, for example, solder bumps. In addition, a thermosetting underfill agent 63 is interposed between the chip 41 and the mounting substrate 61.
上記半導体装置の製造方法は、ピックアップ工程を経た後、フィルム付き半導体チップ41をフリップチップ実装する工程(フリップチップ工程)を有することが好ましい。例えば、図6に示すようにフィルム10’付き半導体チップ41が実装基板61に対してフリップチップ実装される。実装基板61としては、例えば、リードフレーム、TAB(Tape Automated Bonding)フィルム、配線基板が挙げられる。フリップチップ実装により、半導体チップ41は、実装基板61に対してバンプ62を介して電気的に接続される。具体的には、半導体チップ41がその回路形成面側に有する基板(電極パッド)(図示略)と実装基板61の有する端子部(図示略)とが、バンプ62を介して電気的に接続される。バンプ62は、例えばハンダバンプである。また、チップ41と実装基板61との間には、熱硬化性のアンダーフィル剤63が介在している。 (Flip chip mounting process)
The method of manufacturing the semiconductor device preferably includes a step (flip chip step) of flip chip mounting the
以上のようにして、本発明のダイシングテープ一体型背面密着フィルムを使用して半導体装置を製造することができる。
As described above, a semiconductor device can be manufactured using the dicing tape-integrated back contact film of the present invention.
以下に実施例を挙げて本発明をより詳細に説明するが、本発明はこれらの実施例により何ら限定されるものではない。
EXAMPLES The present invention will be described in more detail by way of examples, but the present invention is not limited to these examples.
実施例1
(レーザーマーク層の作製)
アクリル樹脂(商品名「テイサンレジン SG-P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI-3000-4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851-SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO-25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、黒色顔料(商品名「#20」、カーボンブラック、三菱ケミカル株式会社製)3質量部と、熱硬化触媒(商品名「キュアゾール 2PHZ」、四国化成工業株式会社製)10質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒及び熱硬化させ、PETセパレータ上に厚さ17μmのレーザーマーク層(熱硬化済み層)を作製した。 Example 1
(Preparation of laser mark layer)
90 parts by mass of acrylic resin (trade name "Teisan Resin SG-P3" manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatex Co., Ltd. 220 parts by mass, and black pigment (trade name "# 20", carbon black, manufactured by Mitsubishi Chemical Corporation) 3 parts bymass 10 parts by mass of a thermosetting catalyst (trade name "Quazole 2PHZ", manufactured by Shikoku Kasei Kogyo Co., Ltd.) is added to methyl ethyl ketone and mixed, and the solid concentration is It was obtained 8% by weight of the resin composition. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to desolvate and thermally cure, and a 17 μm-thick laser mark layer (thermally cured layer) was produced on the PET separator.
(レーザーマーク層の作製)
アクリル樹脂(商品名「テイサンレジン SG-P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI-3000-4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851-SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO-25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、黒色顔料(商品名「#20」、カーボンブラック、三菱ケミカル株式会社製)3質量部と、熱硬化触媒(商品名「キュアゾール 2PHZ」、四国化成工業株式会社製)10質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒及び熱硬化させ、PETセパレータ上に厚さ17μmのレーザーマーク層(熱硬化済み層)を作製した。 Example 1
(Preparation of laser mark layer)
90 parts by mass of acrylic resin (trade name "Teisan Resin SG-P3" manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatex Co., Ltd. 220 parts by mass, and black pigment (trade name "# 20", carbon black, manufactured by Mitsubishi Chemical Corporation) 3 parts by
(接着剤層の作製)
アクリル樹脂(商品名「テイサンレジン SG-P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI-3000-4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851-SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO-25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、黒色顔料(商品名「#20」、カーボンブラック、三菱ケミカル株式会社製)20質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒させ、PETセパレータ上に厚さ8μmの接着剤層を作製した。 (Preparation of adhesive layer)
90 parts by mass of acrylic resin (trade name "Teisan Resin SG-P3" manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name "SO-25R", average particle diameter: 0.5 μm, made by Admatex Co., Ltd. 220 parts by mass, and black pigment (trade name "# 20", carbon black, made by Mitsubishi Chemical Corporation) 20 parts by mass The mixture was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was subjected to heating for 2 minutes at 130 ° C. to desolvate, and an adhesive layer having a thickness of 8 μm was produced on the PET separator.
アクリル樹脂(商品名「テイサンレジン SG-P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI-3000-4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851-SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO-25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、黒色顔料(商品名「#20」、カーボンブラック、三菱ケミカル株式会社製)20質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒させ、PETセパレータ上に厚さ8μmの接着剤層を作製した。 (Preparation of adhesive layer)
90 parts by mass of acrylic resin (trade name "Teisan Resin SG-P3" manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name "SO-25R", average particle diameter: 0.5 μm, made by Admatex Co., Ltd. 220 parts by mass, and black pigment (trade name "# 20", carbon black, made by Mitsubishi Chemical Corporation) 20 parts by mass The mixture was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 28% by mass. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was subjected to heating for 2 minutes at 130 ° C. to desolvate, and an adhesive layer having a thickness of 8 μm was produced on the PET separator.
上記のようにして作製したPETセパレータ上のレーザーマーク層とPETセパレータ上の接着剤層とをラミネーターを使用して貼り合わせた。具体的には、温度100℃及び圧力0.6MPaの条件で、レーザーマーク層及び接着剤層の露出面同士を貼り合わせた。以上のようにして、実施例1の背面密着フィルムを作製した。なお、レーザーマーク層は半導体背面密着時において最表層となる層であり、接着剤層は内層となる層である。
The laser mark layer on the PET separator produced as described above and the adhesive layer on the PET separator were bonded together using a laminator. Specifically, the exposed surfaces of the laser mark layer and the adhesive layer were bonded to each other under conditions of a temperature of 100 ° C. and a pressure of 0.6 MPa. As described above, a back contact film of Example 1 was produced. The laser mark layer is a layer which is the outermost layer when the semiconductor is in close contact with the back surface, and the adhesive layer is a layer which is an inner layer.
比較例1
接着剤層中の黒色顔料の配合量を表1に示すように変更したこと以外は実施例1と同様にして比較例1の背面密着フィルムを作製した。 Comparative Example 1
A back contact film of Comparative Example 1 was produced in the same manner as in Example 1 except that the blending amount of the black pigment in the adhesive layer was changed as shown in Table 1.
接着剤層中の黒色顔料の配合量を表1に示すように変更したこと以外は実施例1と同様にして比較例1の背面密着フィルムを作製した。 Comparative Example 1
A back contact film of Comparative Example 1 was produced in the same manner as in Example 1 except that the blending amount of the black pigment in the adhesive layer was changed as shown in Table 1.
比較例2
レーザーマーク層中の黒色顔料の配合量及び接着剤層中の黒色顔料の配合量をそれぞれ表1に示すように変更したこと以外は実施例1と同様にして比較例2の背面密着フィルムを作製した。 Comparative example 2
A back contact film of Comparative Example 2 was prepared in the same manner as Example 1, except that the blending amount of the black pigment in the laser mark layer and the blending amount of the black pigment in the adhesive layer were changed as shown in Table 1, respectively. did.
レーザーマーク層中の黒色顔料の配合量及び接着剤層中の黒色顔料の配合量をそれぞれ表1に示すように変更したこと以外は実施例1と同様にして比較例2の背面密着フィルムを作製した。 Comparative example 2
A back contact film of Comparative Example 2 was prepared in the same manner as Example 1, except that the blending amount of the black pigment in the laser mark layer and the blending amount of the black pigment in the adhesive layer were changed as shown in Table 1, respectively. did.
比較例3
アクリル樹脂(商品名「テイサンレジン SG-P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI-3000-4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851-SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO-25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、黒色顔料(商品名「#20」、カーボンブラック、三菱ケミカル株式会社製)20質量部と、熱硬化触媒(商品名「キュアゾール 2PHZ」、四国化成工業株式会社製)10質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒及び熱硬化させ、PETセパレータ上に厚さ25μmの比較例3の背面密着フィルム(熱硬化済み)を作製した。 Comparative example 3
90 parts by mass of acrylic resin (trade name "Teisan Resin SG-P3" manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name "SO-25R", average particle diameter: 0.5 μm, made by Admatex Co., Ltd. 220 parts by mass, and black pigment (trade name "# 20", carbon black, made by Mitsubishi Chemical Corporation) 20 parts bymass 10 parts by mass of a thermosetting catalyst (trade name "Quazole 2PHZ", manufactured by Shikoku Kasei Kogyo Co., Ltd.) is added to methyl ethyl ketone and mixed, and solid content concentration is achieved It was obtained 28% by weight of the resin composition. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to desolvate and thermally cure, and a back contact film (thermally cured) of Comparative Example 3 with a thickness of 25 μm was produced on the PET separator.
アクリル樹脂(商品名「テイサンレジン SG-P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI-3000-4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851-SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO-25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、黒色顔料(商品名「#20」、カーボンブラック、三菱ケミカル株式会社製)20質量部と、熱硬化触媒(商品名「キュアゾール 2PHZ」、四国化成工業株式会社製)10質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒及び熱硬化させ、PETセパレータ上に厚さ25μmの比較例3の背面密着フィルム(熱硬化済み)を作製した。 Comparative example 3
90 parts by mass of acrylic resin (trade name "Teisan Resin SG-P3" manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name "SO-25R", average particle diameter: 0.5 μm, made by Admatex Co., Ltd. 220 parts by mass, and black pigment (trade name "# 20", carbon black, made by Mitsubishi Chemical Corporation) 20 parts by
比較例4
アクリル樹脂(商品名「テイサンレジン SG-P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI-3000-4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851-SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO-25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、黒色顔料(商品名「#20」、カーボンブラック、三菱ケミカル株式会社製)3質量部と、熱硬化触媒(商品名「キュアゾール 2PHZ」、四国化成工業株式会社製)10質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒及び熱硬化させ、PETセパレータ上に厚さ25μmの比較例4の背面密着フィルム(熱硬化済み)を作製した。 Comparative example 4
90 parts by mass of acrylic resin (trade name "Teisan Resin SG-P3" manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatex Co., Ltd. 220 parts by mass, and black pigment (trade name "# 20", carbon black, manufactured by Mitsubishi Chemical Corporation) 3 parts bymass 10 parts by mass of a thermosetting catalyst (trade name "Quazole 2PHZ", manufactured by Shikoku Kasei Kogyo Co., Ltd.) is added to methyl ethyl ketone and mixed, and the solid concentration is It was obtained 8% by weight of the resin composition. Next, the resin composition was applied on a silicone release-treated surface of a PET separator (50 μm in thickness) having a silicone release-treated surface using an applicator to form a resin composition layer. Next, the composition layer was heated at 130 ° C. for 2 minutes to desolvate and thermally cure, and a back contact film (thermally cured) of Comparative Example 4 with a thickness of 25 μm was produced on the PET separator.
アクリル樹脂(商品名「テイサンレジン SG-P3」、ナガセケムテックス株式会社製)90質量部と、エポキシ樹脂E1(商品名「KI-3000-4」、新日鉄住金化学株式会社製)40質量部と、エポキシ樹脂E2(商品名「JER YL980」、三菱ケミカル株式会社製)60質量部と、フェノール樹脂(商品名「MEH7851-SS」、明和化成株式会社製)100質量部と、シリカフィラー(商品名「SO-25R」、平均粒径:0.5μm、株式会社アドマテックス製)220質量部と、黒色顔料(商品名「#20」、カーボンブラック、三菱ケミカル株式会社製)3質量部と、熱硬化触媒(商品名「キュアゾール 2PHZ」、四国化成工業株式会社製)10質量部とを、メチルエチルケトンに加えて混合し、固形分濃度28質量%の樹脂組成物を得た。次に、シリコーン離型処理の施された面を有するPETセパレータ(厚さ50μm)のシリコーン離型処理面上にアプリケーターを使用して当該樹脂組成物を塗布して樹脂組成物層を形成した。次に、この組成物層について130℃で2分間の加熱を行って脱溶媒及び熱硬化させ、PETセパレータ上に厚さ25μmの比較例4の背面密着フィルム(熱硬化済み)を作製した。 Comparative example 4
90 parts by mass of acrylic resin (trade name "Teisan Resin SG-P3" manufactured by Nagase ChemteX Co., Ltd.) and 40 parts by mass epoxy resin E 1 (trade name "KI-3000-4" manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.) 60 parts by mass of epoxy resin E 2 (trade name “JER YL 980”, manufactured by Mitsubishi Chemical Corporation), 100 parts by mass of phenol resin (trade name “MEH 7851-SS”, manufactured by Meiwa Kasei Co., Ltd.), silica filler ( Trade name "SO-25R", average particle diameter: 0.5 μm, manufactured by Admatex Co., Ltd. 220 parts by mass, and black pigment (trade name "# 20", carbon black, manufactured by Mitsubishi Chemical Corporation) 3 parts by
<評価>
実施例及び比較例で得られた背面密着フィルムあるいは背面密着フィルムを構成する各層に関し、以下の評価を行った。結果を表1に示す。 <Evaluation>
The following evaluation was performed regarding each layer which comprises the back contact film or back contact film obtained by the Example and the comparative example. The results are shown in Table 1.
実施例及び比較例で得られた背面密着フィルムあるいは背面密着フィルムを構成する各層に関し、以下の評価を行った。結果を表1に示す。 <Evaluation>
The following evaluation was performed regarding each layer which comprises the back contact film or back contact film obtained by the Example and the comparative example. The results are shown in Table 1.
(1)吸光度
実施例及び比較例で得られた背面密着フィルムにおける各層について、紫外可視近赤外分光光度計(商品名「V-670」、日本分光株式会社製)の積分球ユニットを用いて透過率(吸光度)スペクトルを測定し、波長1300nmにおける吸光度を算出した。 (1) Absorbance About each layer in a back contact film obtained by an example and a comparative example, using an integrating sphere unit of an ultraviolet visible near infrared spectrophotometer (brand name "V-670", JASCO Corporation make) The transmittance (absorbance) spectrum was measured, and the absorbance at a wavelength of 1300 nm was calculated.
実施例及び比較例で得られた背面密着フィルムにおける各層について、紫外可視近赤外分光光度計(商品名「V-670」、日本分光株式会社製)の積分球ユニットを用いて透過率(吸光度)スペクトルを測定し、波長1300nmにおける吸光度を算出した。 (1) Absorbance About each layer in a back contact film obtained by an example and a comparative example, using an integrating sphere unit of an ultraviolet visible near infrared spectrophotometer (brand name "V-670", JASCO Corporation make) The transmittance (absorbance) spectrum was measured, and the absorbance at a wavelength of 1300 nm was calculated.
(2)波長1300nmにおける透過率及び遮光性
実施例及び比較例で得られた背面密着フィルムについて、紫外可視近赤外分光光度計(商品名「V-670」、日本分光株式会社製)に積分球ユニットを用いて透過率スペクトルを測定した。そして、遮光性について、波長1300nmにおける透過率が20%未満である場合を○、20%以上である場合を×として評価した。 (2) Transmittance and light blocking property at a wavelength of 1300 nm The back contact films obtained in Examples and Comparative Examples are integrated into an ultraviolet visible near infrared spectrophotometer (trade name "V-670", manufactured by JASCO Corporation) The transmittance spectrum was measured using a sphere unit. With regard to the light shielding property, the case where the transmittance at a wavelength of 1300 nm was less than 20% was evaluated as ○, and the case where it was 20% or more as x.
実施例及び比較例で得られた背面密着フィルムについて、紫外可視近赤外分光光度計(商品名「V-670」、日本分光株式会社製)に積分球ユニットを用いて透過率スペクトルを測定した。そして、遮光性について、波長1300nmにおける透過率が20%未満である場合を○、20%以上である場合を×として評価した。 (2) Transmittance and light blocking property at a wavelength of 1300 nm The back contact films obtained in Examples and Comparative Examples are integrated into an ultraviolet visible near infrared spectrophotometer (trade name "V-670", manufactured by JASCO Corporation) The transmittance spectrum was measured using a sphere unit. With regard to the light shielding property, the case where the transmittance at a wavelength of 1300 nm was less than 20% was evaluated as ○, and the case where it was 20% or more as x.
(3)レーザーマーキング性
実施例及び比較例で得られた背面密着フィルムをダイシングテープに貼り合わせてダイシングテープ一体型背面密着フィルムを作製し、ダイシングテープ越しに波長532nmのグリーンレーザーで背面密着フィルムに印字した。そして、印字された文字を、マイクロスコープを用いた暗視野観察において視認可能が容易(コントラストが明瞭)であること、及び気泡が発生しないことの両方の基準を満たす場合を○、少なくともどちらかの基準を満たさない場合を×として評価した。 (3) Laser marking property The back contact film obtained in the example and the comparative example is bonded to a dicing tape to prepare a dicing tape integrated back contact film, and the back contact film is formed by a green laser with a wavelength of 532 nm through the dicing tape. I printed it. Then, if the printed characters satisfy both criteria of easy visibility (contrast is clear) in dark field observation using a microscope and that no bubbles are generated, ○, at least one of them The case where the criteria were not met was evaluated as x.
実施例及び比較例で得られた背面密着フィルムをダイシングテープに貼り合わせてダイシングテープ一体型背面密着フィルムを作製し、ダイシングテープ越しに波長532nmのグリーンレーザーで背面密着フィルムに印字した。そして、印字された文字を、マイクロスコープを用いた暗視野観察において視認可能が容易(コントラストが明瞭)であること、及び気泡が発生しないことの両方の基準を満たす場合を○、少なくともどちらかの基準を満たさない場合を×として評価した。 (3) Laser marking property The back contact film obtained in the example and the comparative example is bonded to a dicing tape to prepare a dicing tape integrated back contact film, and the back contact film is formed by a green laser with a wavelength of 532 nm through the dicing tape. I printed it. Then, if the printed characters satisfy both criteria of easy visibility (contrast is clear) in dark field observation using a microscope and that no bubbles are generated, ○, at least one of them The case where the criteria were not met was evaluated as x.
1 ダイシングテープ一体型背面密着フィルム
10 本発明の背面密着フィルム
11 接着剤層(B層)
12 レーザーマーク層(A層)
20 ダイシングテープ
21 基材
22 粘着剤層
30 セパレータ
40 半導体ウエハ
41 半導体チップ 1 Dicing tape-integratedback contact film 10 back contact film 11 of the present invention adhesive layer (B layer)
12 Laser mark layer (A layer)
20dicing tape 21 substrate 22 adhesive layer 30 separator 40 semiconductor wafer 41 semiconductor chip
10 本発明の背面密着フィルム
11 接着剤層(B層)
12 レーザーマーク層(A層)
20 ダイシングテープ
21 基材
22 粘着剤層
30 セパレータ
40 半導体ウエハ
41 半導体チップ 1 Dicing tape-integrated
12 Laser mark layer (A layer)
20
Claims (7)
- 半導体の背面に密着して用いる半導体背面密着フィルムであって、
黒色顔料を含有し、半導体背面密着時において最表層となるA層と、
黒色顔料を含有し且つ波長1300nmにおける吸光度がA層よりも高く、半導体背面密着時において最表層と半導体素子の間に位置する内層となるB層と、を有する半導体背面密着フィルム。 A semiconductor back contact film used in close contact with the back of the semiconductor,
A layer which contains a black pigment and which becomes the outermost layer at the time of close contact with the back surface of the semiconductor,
A semiconductor back contact film comprising a black pigment and having a higher absorbance at a wavelength of 1300 nm than the A layer, and a B layer serving as an inner layer positioned between the outermost layer and the semiconductor element when in close contact with the semiconductor back surface. - B層中の黒色顔料の含有割合がA層中の黒色顔料の含有割合よりも高い請求項1に記載の半導体背面密着フィルム。 The semiconductor back contact film according to claim 1, wherein the content ratio of the black pigment in the layer B is higher than the content ratio of the black pigment in the layer A.
- 半導体背面密着時において内層となる層が、全体として、黒色顔料を含有し且つ波長1300nmにおける吸光度がA層よりも高い層である、請求項1又は2に記載の半導体背面密着フィルム。 The semiconductor back contact film according to claim 1 or 2, wherein the layer to be the inner layer at the time of close contact with the back of the semiconductor is a layer containing a black pigment as a whole and having a higher absorbance at a wavelength of 1300 nm than the A layer.
- A層の波長1300nmにおける吸光度に対するB層の波長1300nmにおける吸光度の比[B層/A層]が1.2~15である請求項1~3のいずれか1項に記載の半導体背面密着フィルム。 The semiconductor back contact film according to any one of claims 1 to 3, wherein the ratio [B layer / A layer] of the absorbance at a wavelength 1300 nm of the layer B to the absorbance at a wavelength 1300 nm of the layer A is 1.2 to 15.
- A層及びB層それぞれが前記黒色顔料としてカーボンブラックを含む請求項1~4のいずれか1項に記載の半導体背面密着フィルム。 The semiconductor back contact film according to any one of claims 1 to 4, wherein each of the layer A and the layer B contains carbon black as the black pigment.
- A層中の黒色顔料の含有割合が0.05~5質量%である請求項1~5のいずれか1項に記載の半導体背面密着フィルム。 The semiconductor back contact film according to any one of claims 1 to 5, wherein the content ratio of the black pigment in the layer A is 0.05 to 5% by mass.
- B層中の黒色顔料の含有割合が0.5~10質量%である請求項1~6のいずれか1項に記載の半導体背面密着フィルム。
The semiconductor back contact film according to any one of claims 1 to 6, wherein the content ratio of the black pigment in the layer B is 0.5 to 10% by mass.
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017254617 | 2017-12-28 | ||
JP2017-254617 | 2017-12-28 | ||
JP2018102373A JP7169093B2 (en) | 2017-12-28 | 2018-05-29 | Semiconductor back adhesion film |
JP2018-102373 | 2018-05-29 | ||
JP2018240227A JP2020101708A (en) | 2018-12-21 | 2018-12-21 | Semiconductor reverse surface adhesive film |
JP2018-240225 | 2018-12-21 | ||
JP2018240224A JP7211803B2 (en) | 2018-12-21 | 2018-12-21 | Semiconductor back adhesion film |
JP2018-240226 | 2018-12-21 | ||
JP2018240226A JP2020102553A (en) | 2018-12-21 | 2018-12-21 | Semiconductor backside adhesion film |
JP2018-240227 | 2018-12-21 | ||
JP2018-240224 | 2018-12-21 | ||
JP2018240225A JP7211804B2 (en) | 2018-12-21 | 2018-12-21 | Semiconductor back adhesion film |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019131856A1 true WO2019131856A1 (en) | 2019-07-04 |
Family
ID=67063734
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/048086 WO2019131854A1 (en) | 2017-12-28 | 2018-12-27 | Semiconductor back surface adhering film |
PCT/JP2018/048076 WO2019131850A1 (en) | 2017-12-28 | 2018-12-27 | Semiconductor back surface adhering film |
PCT/JP2018/048089 WO2019131856A1 (en) | 2017-12-28 | 2018-12-27 | Semiconductor back surface adhering film |
PCT/JP2018/048094 WO2019131857A1 (en) | 2017-12-28 | 2018-12-27 | Semiconductor back surface adhering film |
PCT/JP2018/048083 WO2019131852A1 (en) | 2017-12-28 | 2018-12-27 | Semiconductor back surface adhering film |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/048086 WO2019131854A1 (en) | 2017-12-28 | 2018-12-27 | Semiconductor back surface adhering film |
PCT/JP2018/048076 WO2019131850A1 (en) | 2017-12-28 | 2018-12-27 | Semiconductor back surface adhering film |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/048094 WO2019131857A1 (en) | 2017-12-28 | 2018-12-27 | Semiconductor back surface adhering film |
PCT/JP2018/048083 WO2019131852A1 (en) | 2017-12-28 | 2018-12-27 | Semiconductor back surface adhering film |
Country Status (1)
Country | Link |
---|---|
WO (5) | WO2019131854A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023243487A1 (en) * | 2022-06-13 | 2023-12-21 | 日東電工株式会社 | Adhesive sheet for provisional fixation of electronic component |
WO2023243488A1 (en) * | 2022-06-13 | 2023-12-21 | 日東電工株式会社 | Adhesive sheet for provisional fixation of electronic component |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7326100B2 (en) * | 2019-10-07 | 2023-08-15 | リンテック株式会社 | Protective film forming film and protective film forming composite sheet |
JP7326103B2 (en) * | 2019-10-07 | 2023-08-15 | リンテック株式会社 | Protective film forming film and protective film forming composite sheet |
JP7326101B2 (en) * | 2019-10-07 | 2023-08-15 | リンテック株式会社 | Protective film forming film and protective film forming composite sheet |
JP7326102B2 (en) * | 2019-10-07 | 2023-08-15 | リンテック株式会社 | Protective film forming film and protective film forming composite sheet |
JP7520497B2 (en) | 2019-11-08 | 2024-07-23 | リンテック株式会社 | Adhesive films and composite adhesive sheets |
JPWO2021153361A1 (en) * | 2020-01-27 | 2021-08-05 | ||
JP7534944B2 (en) | 2020-12-10 | 2024-08-15 | リンテック株式会社 | Manufacturing method of workpiece with protective film and manufacturing method of workpiece with protective film forming film |
JP2023000824A (en) * | 2021-06-18 | 2023-01-04 | 日東電工株式会社 | Adhesive sheet, display device, laminate, and adhesive composition |
JP2023000825A (en) * | 2021-06-18 | 2023-01-04 | 日東電工株式会社 | Adhesive sheet, display device, and laminate |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0823005A (en) * | 1993-09-14 | 1996-01-23 | Toshiba Corp | Resin sealed semiconductor device and its manufacturing method, and sealing resin sheet |
JP2007266420A (en) * | 2006-03-29 | 2007-10-11 | Sanyo Electric Co Ltd | Manufacturing method of semiconductor device |
JP2011151360A (en) * | 2009-12-24 | 2011-08-04 | Nitto Denko Corp | Film for flip chip type semiconductor back surface |
WO2014148642A1 (en) * | 2013-03-22 | 2014-09-25 | リンテック株式会社 | Protective film-forming film and protective film-forming composite sheet |
WO2014148496A1 (en) * | 2013-03-19 | 2014-09-25 | リンテック株式会社 | Film for forming protection film |
WO2017188229A1 (en) * | 2016-04-28 | 2017-11-02 | リンテック株式会社 | Film for forming protective coating, composite sheet for forming protective coating, and method for manufacturing semiconductor chip |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63179921A (en) * | 1987-01-21 | 1988-07-23 | Toshiba Corp | Sealing resin composition and resin-sealed type semiconductor device using said composition |
JPH0940756A (en) * | 1995-07-25 | 1997-02-10 | Toshiba Chem Corp | Epoxy resin composition and sealed semiconductor device |
JP6405556B2 (en) * | 2013-07-31 | 2018-10-17 | リンテック株式会社 | Protective film forming film, protective film forming sheet and inspection method |
-
2018
- 2018-12-27 WO PCT/JP2018/048086 patent/WO2019131854A1/en active Application Filing
- 2018-12-27 WO PCT/JP2018/048076 patent/WO2019131850A1/en active Application Filing
- 2018-12-27 WO PCT/JP2018/048089 patent/WO2019131856A1/en active Application Filing
- 2018-12-27 WO PCT/JP2018/048094 patent/WO2019131857A1/en active Application Filing
- 2018-12-27 WO PCT/JP2018/048083 patent/WO2019131852A1/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0823005A (en) * | 1993-09-14 | 1996-01-23 | Toshiba Corp | Resin sealed semiconductor device and its manufacturing method, and sealing resin sheet |
JP2007266420A (en) * | 2006-03-29 | 2007-10-11 | Sanyo Electric Co Ltd | Manufacturing method of semiconductor device |
JP2011151360A (en) * | 2009-12-24 | 2011-08-04 | Nitto Denko Corp | Film for flip chip type semiconductor back surface |
WO2014148496A1 (en) * | 2013-03-19 | 2014-09-25 | リンテック株式会社 | Film for forming protection film |
WO2014148642A1 (en) * | 2013-03-22 | 2014-09-25 | リンテック株式会社 | Protective film-forming film and protective film-forming composite sheet |
WO2017188229A1 (en) * | 2016-04-28 | 2017-11-02 | リンテック株式会社 | Film for forming protective coating, composite sheet for forming protective coating, and method for manufacturing semiconductor chip |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023243487A1 (en) * | 2022-06-13 | 2023-12-21 | 日東電工株式会社 | Adhesive sheet for provisional fixation of electronic component |
WO2023243488A1 (en) * | 2022-06-13 | 2023-12-21 | 日東電工株式会社 | Adhesive sheet for provisional fixation of electronic component |
Also Published As
Publication number | Publication date |
---|---|
WO2019131857A1 (en) | 2019-07-04 |
WO2019131850A1 (en) | 2019-07-04 |
WO2019131852A1 (en) | 2019-07-04 |
WO2019131854A1 (en) | 2019-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2019131856A1 (en) | Semiconductor back surface adhering film | |
JP6876540B2 (en) | Adhesive sheet with integrated dicing tape | |
WO2019150956A1 (en) | Semiconductor back surface contact film and dicing tape-integrated semiconductor back surface contact film | |
JP6921644B2 (en) | Backside protective film with integrated dicing tape | |
JP6890050B2 (en) | Adhesive sheet with integrated dicing tape | |
JP7064184B2 (en) | Manufacturing method of dicing tape integrated sealing sheet and semiconductor device | |
JP7211803B2 (en) | Semiconductor back adhesion film | |
JP7169093B2 (en) | Semiconductor back adhesion film | |
TWI796391B (en) | Dicing Tape Integrated Semiconductor Backside Adhesive Film | |
JP2019091845A (en) | Semiconductor process sheet and method of manufacturing semiconductor package | |
JP7211804B2 (en) | Semiconductor back adhesion film | |
JP7451150B2 (en) | Dicing tape integrated semiconductor back adhesive film | |
JP7344779B2 (en) | Semiconductor back adhesive film | |
JP7333257B2 (en) | Semiconductor back adhesion film | |
TWI795504B (en) | Semiconductor Back Adhesive Film | |
JP7109918B2 (en) | Dicing tape integrated semiconductor back adhesion film | |
JP2020102553A (en) | Semiconductor backside adhesion film | |
JP2020101708A (en) | Semiconductor reverse surface adhesive film |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18893571 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18893571 Country of ref document: EP Kind code of ref document: A1 |