WO2019104958A1

WO2019104958A1 - Electronic device

Info

Publication number: WO2019104958A1
Application number: PCT/CN2018/087812
Authority: WO
Inventors: 黄建东
Original assignee: 上海耕岩智能科技有限公司
Priority date: 2017-11-28
Filing date: 2018-05-22
Publication date: 2019-06-06
Also published as: CN109842491A; TWI695291B; CN109842491B; TW201926103A

Abstract

The present invention provides an electronic device, the electronic device comprising a display unit, an optical detection device, a main circuit board, a processor and a storage medium; the display unit, the optical detection device and the main circuit board are arranged from top to bottom; a universal integrated circuit card (UICC) slot is provided on the main circuit board, and the UICC is provided in the UICC slot. In the present invention, as physiological characteristic information of a user is stored in a UICC, during an identification and authentication process, there is no need to perform verification by means of a cloud server; instead, preset identity identification information in the UICC is acquired by means of a processor, and compared with identity information to be authenticated, so as to achieve the identification and authentication of the identity. The identity information is acquired and authenticated in real time, ensuring that the verification operator of the device is exactly the legally registered user, effectively improving the security of authentication process.

Description

Electronic device

Technical field

The present invention relates to the field of security authentication, and in particular to an electronic device.

Background technique

A Universal Integrated Circuit Card (UICC) is a general term for smart cards with physical characteristics. If applied to a terminal device of a broadband mobile network, the UICC can serve as a removable smart card in the terminal for storing user information, an authentication key (including a public key and a key), and a payment method. The ISO/IEC Internationalization Standards Organization has developed a series of smart card security feature protocols to ensure secure access to UICC files by terminal devices of broadband mobile network users. UICC introduces the concept of a multi-application platform and implements a multi-channel mechanism in which multiple logical applications run simultaneously. The UICC can include multiple logic modules, such as a Subscriber Identity Module (SIM), a Universal Subscriber Identity Module (USIM), and an IP Multimedia Service Identity Module (ISIM). Other non-telecom application modules such as electronic signature authentication and electronic wallet. The logic modules in the UICC can exist alone or multiple at the same time.

Although the UICC has been applied to application modules related to user privacy such as electronic signature authentication, electronic wallet, etc. in the terminal device, and the security feature protocol of the ISO/IEC international standard organization guarantees secure access of the terminal device to the UICC file, More and more popular mobile terminal identification does not apply. For example, fingerprint recognition, face recognition, etc., the current method is still implemented by relying on the sensor components and application programs configured by the terminal. It is known that such identification functions are mainly for unlocking the terminal device, or relatively consider information security. The unlocking function is implemented on the application, and the application having the identification function or the hardware processor is only the identification image (such as fingerprint information) that the user presses the input, and the software or hardware configured by the terminal device is stored in the terminal. The image (pre-set fingerprint image) is compared and not bound with the encryption function of UICC.

However, in the application of financial payment and physiological health monitoring with high information security, more and more rigorous identity authentication and information encryption are the trend of the times. In particular, such applications requiring extreme information security are usually done by cloud servers. For the back-end computing processing platform. The cloud computing server generally performs security verification on the legitimacy of the terminal device in order to ensure that the terminal device that transmits the physiological feature information is a registered terminal device. For example, in an application for conducting a financial transaction, after the user sends an authentication request to the financial transaction cloud platform, the cloud platform usually sends a security verification code to the same terminal device or a different terminal device, prompting the user to input a verification code to improve the financial The security of the transaction. Even so, the cloud verification platform cannot improve the user who operates the terminal device. It is the person who legally registers the user, that is, although the verification of the legality of the terminal device is realized, it is impossible to identify whether the terminal device is used as the head of the household. I (that is, a legitimate user) still has a large security risk.

Summary of the invention

Therefore, it is necessary to provide an electronic device to solve the problem that the cloud server cannot authenticate the user who operates the terminal device, and the security problem exists in the information verification process.

To achieve the above object, the inventors provide an electronic device including a display unit, a photo detecting device, a main circuit board, a processor, and a storage medium; a display unit, a photo detecting device, and a main circuit board from above And the photo detecting device is connected to the processor, the display unit is provided with an identification area, the photo detecting device is disposed under the identification area; and the main circuit board is provided with universal integration a circuit card slot, wherein the universal integrated circuit card slot is provided with a universal integrated circuit card; the storage medium stores an executable computer program, and when the computer program is executed by the processor, the following steps are implemented:

Receiving preset identification information collected by the light detecting device, and writing the preset identification information to the universal integrated circuit card;

Receiving the identity authentication request and the identity information to be authenticated collected by the photodetecting device, obtaining preset identity identification information from the universal integrated circuit card, and comparing the identity information to be authenticated with the corresponding preset identity identification information, If the match is successful, the identity authentication succeeds, otherwise the authentication fails.

Further, the photodetecting device includes MxN pixel detecting regions, and each pixel detecting region is correspondingly provided with one or more thin film transistors to form a group of pixel driving circuits for scanning driving and transmitting data, and a light detecting device. a thin film; the photodetecting film comprises an array formed by a photodiode or a photoconductive transistor.

Further, the photodetecting film is an array formed by photodiodes, the array formed by the photodiodes includes a photodiode sensing region, the photodiode sensing region includes a photodiode layer, and the photodiode layer includes a p-type a semiconductor layer, an i-type semiconductor layer, an n-type semiconductor layer, a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer are stacked from top to bottom, and the i-type semiconductor layer is a microcrystalline silicon structure or an amorphous silicon germanium structure.

Further, the photodetecting film is an array formed by a photosensitive electroplating tube, the array formed by the photo transistor comprises a photosensitive electromagnet sensing region, and the photosensitive transistor is provided with a photosensitive thin film transistor The photosensitive thin film transistor includes a gate, a source, a drain, an insulating layer, and a light absorbing semiconductor layer; the photosensitive thin film transistor is an inverted coplanar structure, and the inverted coplanar structure includes: the gate, The insulating layer and the source are vertically disposed from the bottom to the top, and the drain is laterally coplanar with the source; the insulating layer encloses the gate such that the gate and the source, the gate and the drain are both No contact; a gap fit between the source and the drain, a photosensitive leakage current path formed between the source and the drain, and the light absorbing semiconductor layer is disposed in the photosensitive leakage current channel.

Further, the identity recognition area includes a plurality of identity recognition sub-regions, and a photodetection device is disposed under each of the identity recognition sub-regions; the electronic device further includes a photodetection device control circuit, and the photodetection The device control circuit is connected to the photodetecting device under each of the identification sub-regions;

The light detecting device control circuit is configured to control the light detecting device to be turned on when receiving a start signal of a light detecting device, or to control when a closing signal of a light detecting device is received The photodetecting device is turned off.

Further, when the computer program is executed by the processor, the following steps are also implemented:

The preset identification information is converted into a preset identity information summary by using a cryptographic hash function, and the preset identity identification information is stored in a general-purpose integrated circuit card in the form of a preset identity identification information summary.

Further, the computer program is executed by the processor to implement the following steps:

When the electronic device performs the collection of the default identification information, the array of pixels in the display unit is used to illuminate the body part of the pre-acquired identification information, and the light detecting device receives the reflected light signal to obtain the identification information. When the preset identification information is collected, the computer program may cooperatively encode the array pixel groups on the display unit, and collect the plurality of preset identification information encrypted by the encrypted combined light source to illuminate the body part. Information; or the computer program does not encode the array pixel group cooperative hash function on the display unit, and after the plurality of preset identification information collected by the light detecting device, the computer program uses the cryptographic hash function to set multiple preset identities. The identification information is converted into a preset identification information summary; the preset identification information includes face information, fingerprint information, iris information, and blood volume information.

The authentication key is stored in an integrated circuit card, and the authentication key includes a public key and a private key;

Acquiring the public key in the universal integrated circuit card, and using the RSA encryption algorithm to apply the public key to encrypt the preset identification information summary to obtain preset encryption information, where the preset encryption information includes the encrypted preset identification information summary;

After receiving the identity information to be authenticated, the cryptographic hash function is used to convert the identity information to be authenticated into a digest of the identity information to be authenticated; and the RSA encryption algorithm public key is used to encrypt the identity information to be authenticated, and the encrypted information to be authenticated is obtained. The authentication encrypted information includes an encrypted identity information to be authenticated;

Obtain a private key in the universal integrated circuit card, use the RSA encryption algorithm to apply the private key to decrypt the preset encrypted information, obtain a preset identity identification information summary, and compare the preset identity identification information summary with the identity information to be authenticated, if If the match is successful, the identity authentication succeeds, otherwise the authentication fails.

After receiving the preset identification information, randomly generating the first random digital string and the first random padding blank, where the first random padding blank is a character randomly generated and filled in the preset identity information digest; the preset encryption The information further includes the encrypted first random digital string and the first random filled blank;

After receiving the identity information to be authenticated, randomly generating a second random number string and a second random padding blank, where the second random padding blank is a character randomly generated and filled in the digest of the identity information to be authenticated;

Obtaining a private key in the universal integrated circuit card, and using the RSA encryption algorithm to apply the private key to decrypt the preset encrypted information to obtain the first random digital string and the first random padding blank;

Comparing whether the first random number string and the second random number string, the first random padding blank and the second random padding blank match successfully, if yes, the identity authentication succeeds, otherwise the authentication fails.

Receiving an encryption level setting instruction, setting an encryption level of the electronic device, where the encryption level includes a first encryption level, a second encryption level, and a third encryption level;

When the electronic device is in the first encryption level, the condition for determining the identity authentication success is a preset identity identification information digest and a to-be-authenticated identity information digest, a first random digit string and a second random digit string, a first random padding blank and The three random fill blanks are all successfully matched;

When the electronic device is in the second encryption level, the condition for determining that the identity authentication succeeds is that the preset identity information summary is successfully matched with the identity to be authenticated, and the first random number string and the second random number word, the first random padding Any one of the blank and the second random fill blank is successfully matched;

When the electronic device is in the third encryption level, the condition for determining the identity authentication success is that the preset identity information digest is successfully matched with the identity information to be authenticated.

Different from the prior art, the electronic device of the foregoing technical solution includes a display unit, a photo detecting device, a main circuit board, a processor, and a storage medium; the display unit, the photo detecting device, and the main circuit board are disposed from top to bottom; The photo detecting device is connected to the processor, the display unit is provided with an identification area, the photo detecting device is disposed under the identification area; and the main circuit board is provided with a universal integrated circuit card slot. The universal integrated circuit card slot is provided with a universal integrated circuit card; the storage medium stores an executable computer program, and when the computer program is executed by the processor, the following steps are implemented: receiving the pre-collected by the light detecting device Setting the identification information, and writing the preset identification information to the universal integrated circuit card; receiving the identity authentication request and the identity information to be authenticated collected by the photodetecting device, and obtaining the preset identity from the universal integrated circuit card Identifying the information, comparing the identity information to be authenticated with the corresponding preset identity information, and if the matching is successful, the identity authentication is successful. Otherwise the authentication fails. The present invention stores the user's physiological characteristic information in the UICC card, and does not need to perform verification by the cloud server in the identification and authentication process, but acquires the preset identification information in the UICC card through the processor and associates it with the identity to be authenticated. Information is compared to implement the identity authentication process. Since the identity information is collected in real time and authenticated in real time, it can ensure that the verification operator of the device is the legal registered user, which effectively improves the security of the authentication process.

DRAWINGS

1 is a schematic diagram of an electronic device according to an embodiment of the present invention;

2 is a circuit diagram of a pixel detection area according to an embodiment of the present invention;

3 is a schematic structural view of a photodetecting film according to an embodiment of the present invention;

4 is a schematic structural view of a photodetecting film according to another embodiment of the present invention;

FIG. 5 is a schematic diagram of a structure of a source and a drain according to an embodiment of the present invention; FIG.

6 is a schematic view showing a distribution mode of an optical device according to an embodiment of the present invention;

7 is a flow chart of a method of fabricating a photodetecting film according to an embodiment of the present invention;

FIG. 8 is a schematic diagram of a photodetecting film according to an embodiment of the present invention;

FIG. 9 is a schematic view showing a process of preparing a photodetecting film according to another embodiment of the present invention; FIG.

FIG. 10 is a schematic view showing a process of preparing a photodetecting film according to another embodiment of the present invention; FIG.

11 is a schematic view showing a process of preparing a photodetecting film according to another embodiment of the present invention;

Figure 12 is a flow chart showing the steps when a computer program is executed by a processor according to an embodiment of the present invention;

13 is a flow chart showing the steps when a computer program is executed by a processor according to another embodiment of the present invention;

Description of the reference signs:

1, the gate; 2, the source; 3, the drain; 4, the insulating layer; 5, the light absorbing semiconductor layer;

101, touch screen or cover glass; 102, display unit; 103, low refractive index adhesive; 104, light detecting device; 105, flexible circuit board; 106, main circuit board; 107, universal integrated circuit card slot; , universal integrated circuit card.

Detailed ways

The detailed description of the technical content, structural features, and the objects and effects of the technical solutions will be described in detail below with reference to the specific embodiments and the accompanying drawings.

1 is a schematic diagram of an electronic device according to an embodiment of the present invention; the electronic device is a device with a touch display screen, such as a smart mobile device such as a mobile phone, a tablet computer, a personal digital assistant, or a personal computer. Electronic equipment such as computers for industrial equipment. The electronic device includes a display unit 102, a light detecting device 104, a main circuit board 106, a processor and a storage medium; the display unit 102, the light detecting device 104, and the main circuit board 106 are disposed from top to bottom; The measuring device 104 is connected to the processor. The display unit 102 is provided with an identification area. The photo detecting device 104 is disposed under the identification area. The main circuit board 106 is provided with a universal integrated circuit card slot. 107. A universal integrated circuit card 108 is disposed in the universal integrated circuit card slot 107.

In some embodiments, the display unit 102 is a display screen that uses an active array thin film transistor as a scan to drive and transmit data. The display screen includes an AMOLED display or a micro LED display. The light transmittance of the display screen is greater than 3%, so that during the light detection function, the light flux of the light passing through the display screen is sufficiently large, and then received by the light detecting device disposed under the display screen, thereby realizing light detection. Features. In other embodiments, a touch screen or cover glass 101 is disposed above the display unit 102 to meet the requirements of different end products.

The lower end surface of the display unit 102 and the upper end surface of the photodetecting device 104 may be bonded by a low refractive index adhesive 103 having a refractive index of less than 1.4. On the one hand, the low refractive index adhesive can act as a bonding function, so that the light detecting film is fastened to the bottom surface of the display unit, and is not easy to be sent off; on the other hand, a low refractive index glue is used, and when the light is transmitted through the display unit, the light is detected. When measuring a film, due to the refraction of the low refractive index adhesive (the refractive index of the adhesive is lower than the refractive index of the portion of the photodetecting film that is in contact with it, the portion of the photodetecting film that is in contact with the low refractive index adhesive is usually The refractive index is 1.4 or more, so that the light can be incident on the photodetecting film in the vertical direction as much as possible after being refracted at the position of the low refractive index adhesive, which can effectively improve the photoelectric conversion rate. In the present embodiment, the low refractive index adhesive is an organic compound adhesive having a carbon-fluorine bond.

The processor is an electronic component having a data processing function, such as a central processing unit (CPU), a digital signal processor (DSP), or a system on chip (SoC). The storage medium is an electronic component having a data storage function, including but not limited to: RAM, ROM, magnetic disk, magnetic tape, optical disk, flash memory, USB flash drive, mobile hard disk, memory card, memory stick, and the like.

An executable computer program is stored in the storage medium, and when the computer program is executed by the processor, the following steps are performed: receiving preset identification information collected by the light detecting device, and writing the preset identification information a universal integrated circuit card; receiving the identity authentication request and the identity information to be authenticated collected by the photodetecting device, acquiring preset identification information from the universal integrated circuit card, and identifying the identity information to be authenticated and the corresponding preset identity The information is compared. If the matching is successful, the identity authentication succeeds, otherwise the authentication fails. In this embodiment, the preset identity identification information includes face information, fingerprint information, iris information, and blood volume information.

Since the preset identification information is pre-stored in the universal integrated circuit card (hereinafter referred to as the UICC card), the processor can acquire the preset identification information in the UICC card and compare it with the identity information to be authenticated. Identification and authentication process. Because the identity information is collected in real time and authenticated in real time, it can ensure that the verification operator of the device is the legally registered user. Compared with the method of authentication in the cloud server, the security of the authentication process is effectively improved.

Taking the preset identification information as blood volume information as an example, when light passes through the skin of the human body and enters other tissues of the human body below the body surface, some light will be absorbed, some light will be reflected, scattered, etc., and the change of the light path depends on The structure of the tissue below the skin. In general, human blood can absorb more light than the surrounding tissue, so when the light signal encounters more blood, the less light signal is reflected back. Therefore, by detecting the optical signal information reflected by the body part, the blood volume information corresponding to the user can be obtained, and according to the blood volume information corresponding to the user, other preset identification information of the user (such as blood pressure index and body fat content) can be obtained by conversion. , blood oxygen saturation, cardiopulmonary index, electrocardiogram, etc.).

In some embodiments, the photodetecting device 104 is connected to the main circuit board 106 via a flexible circuit board 105, which includes a chip having an image signal reading and recognition function. The chip for the identification function includes a fingerprint image reading chip, a fingerprint recognition algorithm chip, and the like, and the chip type is an ADAS1256 chip of Analog Devices. Flexible circuit boards are also called flexible circuit boards and flexible circuit boards. Referring to the soft board or FPC, the flexible circuit board has the advantages of high wiring density, light weight, thin thickness, less wiring space limitation, and high flexibility compared with ordinary hard resin circuit boards. The setting of the flexible circuit board can make the overall light detecting device thinner and lighter, and meet the market demand.

In order to enhance the security of the preset identification information in the UICC card and save the storage space of the preset identification information in the UICC card, in some embodiments, when the computer program is executed by the processor, the following steps are also implemented: When the electronic device performs the collection of the default identification information, the array of pixels in the display unit is used to illuminate the body part of the pre-acquired identification information, and the light detecting device receives the reflected light signal to obtain the identification information. When the preset identification information is collected, the computer program may cooperatively encode the array pixel groups on the display unit, and collect the plurality of preset identification information encrypted by the encrypted combined light source to illuminate the body part. Information; or the computer program does not encode the array pixel group cooperative hash function on the display unit, and after the plurality of preset identification information collected by the light detecting device, the computer program converts the preset identification information by using a cryptographic hash function. For prescribing the identification information summary, the preset identification information is stored in the general integrated circuit card in the form of a preset identification information summary. The cryptographic hash function, which is a Hash Function (also directly transliterated as "hash"), converts an input of arbitrary length (also called pre-map) into a fixed-length output through a hashing algorithm. Is the hash value. This conversion is a compression map, that is, the space of the hash value is usually much smaller than the input space, and different inputs may be hashed to the same output. In short, the cryptographic hash function is a function of compressing a message of any length into a fixed length message digest. The conversion can compress the storage space of the preset identification information to preset the identification information. Better storage.

FIG. 12 is a flow chart showing the steps when a computer program according to an embodiment of the present invention is executed by a processor. The computer program is also executed by the processor to implement the following steps:

First, the process proceeds to step S1201 to store the authentication key in the integrated circuit card, where the authentication key includes a public key and a private key;

Then, the method proceeds to step S1202 to obtain the public key in the universal integrated circuit card, and uses the RSA encryption algorithm to apply the public key to encrypt the preset identification information summary to obtain preset encrypted information, where the preset encrypted information includes the encrypted preset identity. Identification information summary;

Then, after receiving the identity information to be authenticated in step S1203, the identity information to be authenticated is converted into a summary of the identity information to be authenticated by using a cryptographic hash function; and the abstraction of the identity information to be authenticated is encrypted by using the RSA encryption algorithm public key to obtain the identity to be authenticated. Encrypting information, the encrypted information to be authenticated includes an encrypted identity information to be authenticated;

Then, proceeding to step S1204 to obtain a private key in the universal integrated circuit card, and using the RSA encryption algorithm to apply the private key to decrypt the preset encrypted information to obtain a preset identity identification information summary;

Then, the process proceeds to step S1205 to compare the preset identity information digest with the identity information to be authenticated. If the matching is successful, the process proceeds to step S1207, and the identity authentication succeeds. Otherwise, the process proceeds to step S1206. Through the above method, public key encryption and private key decryption are adopted. Since the public key and the private key are stored in the UICC card, the extraction security of extracting the preset identification information summary in the UICC card is greatly improved. In other embodiments, the algorithm for encrypting or decrypting the digest is not limited to the RSA algorithm, but may be other existing encryption and decryption algorithms.

As shown in FIG. 13, in order to further improve the security of information authentication, in some embodiments, when the computer program is executed by the processor, the following steps are also implemented:

First, after receiving the preset identification information in step S1301, the first random digit string and the first random padding blank are randomly generated. The first random padding blank is a character that is randomly generated and filled in the preset identity information digest; the preset encryption information further includes the encrypted first random digit string and the first random padding blank; and then proceeds to step S1302. After receiving the identity information to be authenticated, the second random padding string and the second random padding blank are randomly generated, and the second random padding blank is a character randomly generated and filled in the digest of the identity information to be authenticated; and then proceeds to step S1303 to obtain a universal The private key in the integrated circuit card uses the RSA encryption algorithm to decrypt the preset encrypted information by using the private key to obtain the first random digital string and the first random filled blank; then proceeds to step S1304 to compare the first random digital string with the first Whether the two random number string, the first random padding blank and the second random padding blank match successfully, if yes, the process proceeds to step S1306, the identity authentication is successful, otherwise the process proceeds to step S1305, and the authentication fails. In short, if the identity information to be authenticated is to be authenticated, in addition to matching the generated digest with the preset identification information digest in the UICC card, the first random digit string and the second random digit string are also required. The first random padding blank matches one or more of the second random padding blanks, thereby effectively improving the security of the identity information authentication.

In order to allow the user to set different application software or encryption level of the electronic device according to actual needs, in some embodiments, the computer program is executed by the processor to implement the following steps:

In short, the degree of encryption from high to low is the first encryption level, the second encryption level, and the third encryption level. For applications that require strong encryption, such as software involving financial transactions, trade secret data, and online payment passwords, users can set the encryption level of these applications to the first encryption level so that only the identity authentication process can be used. The preset identity identification information digest and the identity to be authenticated identity digest, the first random digit string and the second random digit string, the first random padding blank and the second random padding blank are all successfully matched. Corresponding unlocking operations or payment operations to improve the security of information data. For applications that do not require strong encryption, such as browsing of album images, the user can set the encryption level of the application to the second encryption level or the third encryption level according to their own needs.

In some embodiments, when the computer program is executed by the processor, the following steps are performed: receiving a plurality of preset identification information collected by the photo detecting device, and using the cryptographic hash function to set a plurality of preset identification information. Convert to a summary of the default identification information. The plurality of preset identification information may be of the same type or different types. For example, when the preset identification information is the fingerprint information of different fingers, when the user places multiple fingers on the identification area, the photo detecting device can synchronously collect the preset fingerprint information corresponding to the plurality of fingers of the user, and then adopt the encryption. The hash function converts the collected fingerprint information into a fingerprint digest. For example, the plurality of preset identification information includes fingerprint information of one finger and face information, and the face information and the fingerprint information are converted into corresponding fingerprint abstracts by using a cryptographic hash function. The preset identification information is multiple, which provides users with more choices on the one hand, and effectively improves the security and accuracy of identity information authentication on the other hand.

The photodetecting device is a TFT image sensing array film, which comprises MxN pixel detecting regions, and each pixel detecting region is correspondingly provided with one or more thin film transistors to form a group of pixel film circuits for scanning driving and transmitting data, And a light detecting film comprising a photodiode or a photosensitive ceramic tube. Taking the photodetecting film as a photodiode as an example, the basic circuit composition of each pixel detecting area is as shown in FIG. 2 . The photodiode is a main sensor device for forming a photodetecting film, and the gate scan line operates the thin film transistor (TFT) in an open mode at a fixed frame rate, and when the photo detecting device detects the optical signal, The thin film transistor is turned on to transfer the capacitor voltage data to the read chip. For details, please refer to the following two documents: [1] "MJPowell, IDFrench, JRHughes, NCBird, OSDavies, C.Glasse, and JECurran, [2] "Amorphous silicon image sensor arrays," in Mater.Res .Soc. Symp. Proc., 1992, vol. 258, pp. 1127 - 1137", "B. Razavi, "Design of Analog CMOS Integrated Circuits," McGraw-Hill, 2000".

The photodetecting device is a TFT image sensing array film, and the light detecting wavelength range includes a visible light band or an infrared light band. The TFT image sensing array film is composed of MXN photodetecting films, and each photo detecting film correspondingly detects one pixel. Therefore, the TFT image sensing array film can be used to detect MXN pixels to form a corresponding image. For each photodetecting film, there are several implementations:

Embodiment 1:

The TFT image sensing array film (ie, photodetecting device) is an array formed by photodiodes, and the array formed by the photodiodes includes a photodiode sensing region. Existing liquid crystal display (LCD) panels or organic light emitting diode (OLED) display panels are all driven by a TFT structure to scan a single pixel to realize the display function of the pixel array on the panel. The main structure for forming the TFT switching function is a semiconductor field effect transistor (FET), and the well-known semiconductor layer material mainly includes amorphous silicon, polycrystalline silicon, indium gallium zinc oxide (IGZO), or an organic compound mixed with carbon nano materials. . Since the structure of the light sensing diode can also be prepared by using such a semiconductor material, and the production equipment is also compatible with the production equipment of the TFT array, in recent years, the TFT photodetecting diode (ie, the photodiode) has been produced by the TFT array preparation method. For the specific structure of the existing photodiode, reference may be made to the description of the structure of the photodetecting device in US Pat. No. 6,943,070 B2 and the Patent No. CN204808361U of the People's Republic of China. The production process of the TFT image sensing array film is different from that of the display panel TFT in that the pixel opening area of the display panel is changed to the light sensing area in the production process. The TFT can be prepared by using a thin glass substrate or a high temperature resistant plastic material as described in US Pat. No. 6,943,070 B2.

The existing TFT image sensing array film is susceptible to reflection or refraction of visible light emitted by ambient light or display pixels, causing optical interference, which seriously affects the TFT image sensing array film embedded under the display panel. Signal-to-Noise Ratio (SNR), in order to improve the signal-to-noise ratio, as shown in FIG. 3, the photodetecting film of the present invention is further improved, so that the improved TFT image sensing array film can detect and reflect the body part of the user. Infrared signal. The specific structure is as follows:

The photodiode layer includes a p-type semiconductor layer, an i-type semiconductor layer, an n-type semiconductor layer, a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked from top to bottom, and the i-type semiconductor layer is micro A crystalline silicon structure or an amorphous silicon germanium structure. The microcrystalline silicon structure is a semiconductor layer formed by chemical vapor deposition of silane and hydrogen. The crystallinity of the microcrystalline silicon is greater than 40%, and the forbidden band width is less than 1.7 eV. The amorphous silicon germanium structure is an amorphous semiconductor layer formed by chemical vapor deposition of silane, hydrogen and germane, and has a forbidden band width of less than 1.7 eV.

Band gap refers to the width of a band gap (in electron volts (eV)). The energy of electrons in a solid cannot be continuously valued, but some discontinuous energy bands. The existence of free electrons, the energy band in which free electrons exist is called the conduction band (which can conduct electricity). If the bound electrons become free electrons, they must obtain enough energy to jump from the valence band to the conduction band. The minimum value of this energy is the forbidden band width. . The forbidden band width is an important characteristic parameter of the semiconductor, and its size is mainly determined by the band structure of the semiconductor, that is, the crystal structure and the bonding property of the atoms.

At room temperature (300K), the forbidden band width of ruthenium is about 0.66 ev. The silane contains yttrium element. When the yttrium element is doped, the forbidden band width of the i-type semiconductor layer is decreased. When less than 1.7 eV is satisfied, The i-type semiconductor layer can receive optical signals in the wavelength range of visible light to infrared light (or near-infrared light). By adjusting the concentration of GeH4 deposited by chemical weathering, the operating wavelength range of a photodiode containing an amorphous or microcrystalline silicided yttrium structure can be extended to a wavelength range of 600 nm to 2000 nm.

Embodiment 2:

On the basis of the first embodiment, in order to improve the quantum efficiency of photoelectric conversion, the amorphous silicon photodiode can also be formed by stacking a p-type/i-type/n-type structure with a double junction or more. The first junction p-type/i-type/n-type material of the photodiode is still an amorphous silicon structure, and the p-type/i-type/n-type material above the second junction layer may be a microcrystalline structure, a polycrystalline structure or a doped Compound materials that extend the range of photosensitive wavelengths. In short, a plurality of sets of p-type/i-type/n-type structures can be stacked on top of each other to realize a photodiode structure. For each p-type/i-type/n-type structure, the photodiode structure described in Embodiment 1 is used. .

Embodiment 3:

On the basis of Embodiment 1 or Embodiment 2, for each p-type/i-type/n-type structure, the p-type semiconductor layer included therein may be a multilayer structure of more than two layers. For example, the p-type semiconductor layer has a three-layer structure, and includes a first p-type semiconductor layer (p1 layer), a second p-type semiconductor layer (p2 layer), and a third p-type semiconductor layer (p3 layer) from top to bottom. Among them, the p1 layer can adopt an amorphous structure and is heavily doped with boron (the boron concentration is more than twice that of the standard process); p2 and p3 adopt a microcrystalline structure, and the normal doping boron (doped according to the standard process concentration) depends on The thinned p2 layer and p3 layer reduce the absorption of light, so that the light enters the i layer as much as possible and is absorbed by the i layer, thereby increasing the photoelectric conversion rate; on the other hand, the p2 layer and the p3 layer are doped with normal boron. It is possible to effectively avoid deterioration of the built-in potential due to heavy doping of the p1 layer. When the p-type semiconductor layer includes a multilayer structure which is other layers, it is similar here, and will not be described herein.

Similarly, the n-type semiconductor layer may also be a multilayer structure of more than two layers. For example, the n-type semiconductor layer has a three-layer structure, and includes a first n-type semiconductor layer (n1 layer), a second n-type semiconductor layer (n2 layer), and a third n-type semiconductor layer (n3 layer) from top to bottom. Among them, the n3 layer can adopt an amorphous structure and is heavily doped with phosphorus (the phosphorus content is more than twice that of the standard process); n1 and n2 adopt a microcrystalline structure, and the normal doped phosphorus (according to the standard production process) depends on the thickness reduction The n1 layer and the n2 layer reduce the absorption of light, so that the light enters the i layer as much as possible and is absorbed by the i layer, thereby improving the photoelectric conversion rate; on the other hand, the normal phosphorus doping of the n1 layer and the n2 layer can effectively avoid The built-in potential is degraded due to heavy doping of the n3 layer. When the n-type semiconductor layer includes a multilayer structure which is other layers, it is similar here, and will not be described again here.

Embodiment 4:

This embodiment is a further improvement of the first or second or third embodiment, as shown in FIG. 6( a ), specifically including: providing a first optical device on an upper end surface of the p-type semiconductor layer, the first An optical device is used to reduce the reflectance of light on the upper end surface of the p-type semiconductor layer or to reduce the angle of refraction of the light in the p-type semiconductor layer to increase the amount of light incident. Reducing the angle of refraction of the light in the p-type semiconductor layer allows the light to be incident into the p-type semiconductor layer as close as possible to the vertical direction, so that the light is absorbed as much as possible by the i-type semiconductor layer under the p-type semiconductor layer, thereby Further increase the photoelectric conversion rate of the photodiode. When the p-type semiconductor layer has a multilayer structure, the first optical device is disposed on the upper end surface of the uppermost p-type semiconductor layer.

The first optical device includes a photonic crystal structure or a microlens array structure in which the refractive index changes periodically, or a diffuse scattering structure in which the refractive index changes non-periodically. The refractive index of the first optical device is smaller than the refractive index of the p-type semiconductor layer, so that the incident angle of the light after the first optical device is refracted is smaller than the angle of refraction, that is, the light is incident into the p-type as close as possible to the vertical direction. Semiconductor layer.

Embodiment 5:

This embodiment is a further improvement for the first or second or third or fourth embodiment. As shown in (b) and (c) of FIG. 6, the lower end surface of the n-type semiconductor layer is further provided with a second optical device. The second optical device is for increasing the multiple reflectance of light at the lower end surface of the n-type semiconductor layer. The multiple reflectance means that the light enters the i-type semiconductor layer after being reflected by the second optical device, and is again absorbed by the i-type semiconductor layer, and the absorbed light is again reflected by the second optical device and enters the i-type semiconductor layer. This is repeated several times to increase the photoelectric conversion ratio of the i-type semiconductor layer. When the n-type semiconductor layer has a multilayer structure, the second optical device is disposed on the lower end surface of the lowermost one of the n-type semiconductor layers.

The second optical device includes a photonic crystal structure whose refractive index changes periodically, or a diffuse scattering structure whose refractive index changes non-periodically, and the refractive index of the second optical device is smaller than that of the n-type semiconductor layer . In this way, the light can be reflected as much as possible on the lower end surface of the n-type semiconductor layer, so that the reflected light is again absorbed by the i-type semiconductor layer, thereby appropriately amplifying the signal in the wavelength range of light absorbable by the i-type semiconductor layer. Increase the photoelectric flow rate in this wavelength range.

Example 6:

As shown in FIG. 4, the TFT image sensing array film (ie, the photodetecting device) is an array formed by a photosensitive electroplating tube, and the array formed by the photo transistor comprises a photosensitive electromagnet sensing region. The photosensitive transistor sensing region is provided with a photosensitive thin film transistor including a gate 1, a source 2, a drain 3, an insulating layer 4, and a light absorbing semiconductor layer 5; the photosensitive thin film transistor is an inverted coplanar The inverted coplanar structure includes: the gate 1, the insulating layer 4, and the source 2 are longitudinally disposed from the bottom to the top, and the drain 3 and the source 2 are laterally coplanar; the insulating layer 4 wrapping the gate 1 so that the gate 1 and the source 2 are not in contact with each other between the gate 1 and the drain 3; the gap between the source 2 and the drain 3 is matched, and the source 2 and the drain 3 are A photosensitive leakage current path is formed between the lateral directions, and the light absorbing semiconductor layer 5 is disposed in the photosensitive leakage current channel.

Generally, when the TFT is operated in the off state by the gate voltage, no current flows between the source and the drain; however, when the TFT is irradiated by the light source, the electron-hole pair is excited by the energy of the light in the semiconductor, and the TFT The field effect of the structure separates the electron-hole pairs, which in turn causes the TFT to generate a photosensitive leakage current. Such photosensitive leakage current characteristics allow the TFT array to be applied to the technology of light detection or light detection. Compared with a device for generally adopting a TFT leakage current as a photosensitive thin film transistor, the present invention arranges a light absorbing semiconductor layer on an uppermost light absorbing layer in an inverted coplanar field effect transistor structure, which greatly increases photoelectron excitation and improves photoelectric conversion efficiency. .

FIG. 7 is a flow chart showing a method of fabricating a photodetecting film according to an embodiment of the present invention. The method is used to prepare the photosensitive thin film transistor (ie, the photodetecting film) of the sixth embodiment, and specifically includes the following steps:

First, the process proceeds to step S801 to deposit a gate electrode by magnetron sputtering on the substrate of the pixel thin film transistor. The substrate of the pixel thin film transistor may be a hard plate or a flexible material such as polyimide;

Then proceeding to step S802, the insulating layer is coated by chemical vapor deposition or magnetron sputtering on the gate;

Then proceeding to step S803, the n-type doped semiconductor layer of the source and the drain is deposited by chemical vapor deposition over the insulating layer, and the metal layer of the source and the drain is plated by magnetron sputtering, and the yellow light is passed through the yellow light. The etching process defines a source and a drain of the predetermined structure, and the source and the drain are laterally coplanar, and the gap is matched, and a photosensitive leakage current path is formed between the source and the drain;

Then, proceeding to step S804, a light absorbing semiconductor layer is deposited by chemical vapor deposition in the photosensitive leakage current channel.

Example 7:

In the well-known field effect transistor structure, the TFT as the scan driving and data transfer switch does not need to be specially designed for the structure of collecting photocurrent between the source and the drain; however, the field effect transistor is applied to the detection of the photosensitive leakage current. On the measurement, if the electron-hole pairs excited by the light are separated by the field effect, the drift path driven by the electric field is too long, and it is very likely that the photoelectrons will re-enter the holes before they reach the electrode smoothly. Recombination, or the Dangling Bond defect of the light absorbing semiconductor layer itself, cannot effectively contribute to the photocurrent output for photodetection.

In order to improve the photosensitive leakage current, the length of the channel between the source and the drain is affected, so as to increase the absorption of the semiconductor area without deteriorating the photoelectric conversion efficiency, the source and the drain of the fourth embodiment are used in this embodiment. A new step was made to propose a new structure of source and drain.

As shown in FIG. 5, the source and the drain are both in plurality, the source and the source are connected in parallel with each other, and the drain and the drain are connected in parallel; the gap between the source and the drain is Cooperating, forming a photosensitive leakage current channel between the source and the drain lateral direction includes: forming a first gap between adjacent sources, one drain being disposed in the first gap, and forming a first gap between adjacent drains Two gaps, one source is placed in the second gap, and the source and the drain are staggered and gap-fitted. The distance between each source and the adjacent drain is less than the electron drift distance, which is the distance that the electron can survive under field effect. In this way, in each of the detected pixels, the plurality of sources belonging to the same pixel are connected in parallel, and the plurality of drains belonging to the same pixel are also connected in parallel, which can effectively reduce the probability of recombination of the photoexcited electrons and holes. The successful probability of collecting photoelectrons by the electrodes under the effect of field effect is improved, and the photosensitivity of the TFT leakage current photosensitive thin film transistor is maximized.

As shown in Figs. 8 to 11, the process for the stepwise preparation of the photosensitive thin film transistor (i.e., photodetecting film) of the seventh embodiment is similar to that of the photosensitive thin film transistor of the sixth embodiment. The difference is that, in preparing the source and the drain, in step S803, “the source and the drain of the predetermined structure are defined by a yellow etching process, and the source and the drain are laterally coplanar, and the gap is matched, and the source is made. Forming a photosensitive leakage current path between the pole and the drain lateral direction" includes: defining a source electrode group and a drain electrode group by a yellow etching process, each of the source electrode groups including a plurality of sources, a source and a source Parallel to each other; each of the drain electrode groups includes a plurality of drains, and the drain and the drain are connected in parallel with each other; a first gap is formed between adjacent sources, and a drain is disposed in the first gap, A second gap is formed between adjacent drains, one source is disposed in the second gap, and the source and the drain are staggered and gap-fitted.

In some embodiments, the photodetecting device is configured to receive a detection trigger signal, is in a light detecting state, and receives an optical signal reflected by a detecting portion (such as a fingerprint, an eyeball, an iris, etc.) to capture a user's detection. Measuring part information; and for receiving a light source trigger signal, in a state of emitting a light source (such as an infrared light source). Preferably, the light source trigger signal and the detection trigger signal are alternately switched and conform to a preset frequency. Taking an array formed by a photodetector as a photodiode as an example, in a practical application, a bias voltage (including a forward bias, or a zero bias or a negative bias) can be applied by a TFT for scanning driving. Between the type / i type / n type photodiode, the TFT image sensing array film emits infrared light.

Specifically, a forward bias, or a zero bias or a negative bias, may be alternately applied between the p-type/i-type/n-type infrared photodiodes to trigger the first trigger signal or the second trigger signal. Taking an array of infrared photodiodes with 10 columns of pixel arrays as an example, a forward bias is applied to the p-type/i-type/n-type infrared photodiodes in the first period, so that the 10 columns of pixel lattices are all emitting infrared rays. Light state; applying a zero bias or a negative bias to the p-type/i-type/n-type infrared photodiode in the second period, so that the 10-row pixel lattice is in the infrared light detection state, and is used for capturing the user's eyeball reflection back. Infrared light information, and generate corresponding infrared image output; in the third cycle, the p-type / i-type / n-type infrared photodiode is applied with a forward bias, so that the 10 columns of pixel lattice are in the state of emitting infrared light. Repeat alternately, and so on. Further, the light source trigger signal (ie, the first trigger signal) and the detection trigger signal (ie, the second trigger signal) are alternately switched, and the frequency of the switching conforms to a preset frequency. The time interval between adjacent periods may be set according to actual needs. Preferably, the time interval may be set to a time required for the TFT array to scan and scan each frame of the infrared photodiode array to receive at least one complete image signal. , that is, the preset frequency is switched once every time interval elapsed.

In some embodiments, the identification area includes a plurality of identification sub-areas, and a photo detecting device is disposed below each of the identification sub-areas. Taking fingerprint recognition as an example, when the computer program is executed by the processor, the following steps are implemented: receiving a startup instruction for the fingerprint identification sub-region (ie, the identification sub-region), and the detection control circuit turns on the fingerprint recognition sub-region (ie, The light detecting device below the identification sub-area; or receiving a close command to the fingerprint recognition sub-area, the detection control circuit turning on the photo detecting device below the fingerprint identifying sub-area.

Taking the number of fingerprint recognition sub-regions as two as an example, the two fingerprint recognition sub-regions may be evenly distributed on the screen one after another or one left and one right, or may be distributed in the screen in other arrangements. The following describes the application process of the terminal with two fingerprint identification sub-areas: in the process of using, the user triggers the activation signal, and the photodetection device under the two fingerprint recognition sub-areas (ie, the photodetection device) ) are set to the on state. In a preferred embodiment, the two fingerprint recognition sub-areas are covered by the entire display screen, so that the optical signals entering the display screen when the photodetecting devices under the two fingerprint recognition sub-areas are all set to the on state can be ensured. It can be absorbed by the TFT image sensing array film (ie, photodetection device) below, so as to capture the user's fingerprint information or body part information in time. Of course, the user can also set the photodetection device under one of the fingerprint recognition sub-regions to be turned on according to his preference, and the photodetection device under the other fingerprint recognition sub-region is turned off.

It should be noted that although the above embodiments have been described herein, the scope of the invention is not limited thereby. Therefore, based on the innovative concept of the present invention, the above technical solutions are directly or indirectly applied to the changes and modifications made to the embodiments described herein, or the equivalent structures or equivalent processes transformed by the contents of the specification and drawings of the present invention. All other related technical fields are included in the scope of patent protection of the present invention.

Claims

An electronic device, comprising: a display unit, a light detecting device, a main circuit board, a processor, and a storage medium; the display unit, the photo detecting device, and the main circuit board are disposed from top to bottom; The photo detecting device is connected to the processor, the display unit is provided with an identification area, and the photo detecting device is disposed under the identification area; the photo detecting device comprises MxN pixel detecting areas, each a pixel detection area correspondingly comprises one or more thin film electro-optic tubes formed by a group of pixel film circuits for scanning driving and transmitting data, and a light detecting film; the light detecting film comprises a photodiode or a photosensitive electro-optic tube Array

a universal integrated circuit card slot is disposed on the main circuit board, and a universal integrated circuit card is disposed in the universal integrated circuit card slot; an executable computer program is stored in the storage medium, and the computer program is processed by the processor The following steps are implemented during execution:

Receiving preset identification information collected by the light detecting device, and writing the preset identification information to the universal integrated circuit card;

Receiving the identity authentication request and the identity information to be authenticated collected by the photodetecting device, obtaining preset identity identification information from the universal integrated circuit card, and comparing the identity information to be authenticated with the corresponding preset identity identification information, If the match is successful, the identity authentication succeeds, otherwise the authentication fails.
The electronic device according to claim 1, wherein the photodetecting film is an array formed by photodiodes, and the array formed by the photodiodes comprises a photodiode sensing region, and the photodiode sensing region comprises photosensitive a diode layer including a p-type semiconductor layer, an i-type semiconductor layer, an n-type semiconductor layer, a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked from top to bottom, the i-type semiconductor The layer is a microcrystalline silicon structure or an amorphous silicon germanium structure.
The electronic device according to claim 1, wherein the photodetecting film is an array formed by a photosensitive electroplating tube, and the array formed by the photoconductive transistor comprises a photosensitive electromagnet sensing region, The photosensitive transistor sensing region is provided with a photosensitive thin film transistor including a gate, a source, a drain, an insulating layer, and a light absorbing semiconductor layer; the photosensitive thin film transistor is an inverted coplanar structure, and the inverted The coplanar structure includes: the gate, the insulating layer, and the source are vertically disposed from bottom to top, the drain is laterally coplanar with the source; the insulating layer wraps the gate to make the gate The source, the gate and the drain are not in contact; the gap between the source and the drain is matched, a photosensitive leakage current path is formed between the source and the drain, and the light absorbing semiconductor layer is disposed in the photosensitive leakage current channel. .
The electronic device according to claim 1, wherein the identification area comprises a plurality of identification sub-areas, and a photo detecting device is disposed under each of the identification sub-areas; the electronic device further comprises light Detecting a device control circuit, wherein the photodetection device control circuit is connected to the photodetecting device under each of the identification sub-regions;

The light detecting device control circuit is configured to control the light detecting device to be turned on when receiving a start signal of a light detecting device, or to control when a closing signal of a light detecting device is received The photodetecting device is turned off.
The electronic device according to any one of claims 1 to 4, wherein the computer program is further executed by the processor to:

The pixel array combination preset on the display unit is encoded, and the body part is irradiated with the encoded pixel array combination, and the optical signal reflected back by the body part is received to obtain preset identification information.
The electronic device according to any one of claims 1 to 4, wherein the computer program is further executed by the processor to:

The preset identification information is converted into a preset identity information summary by using a cryptographic hash function, and the preset identity identification information is stored in a general-purpose integrated circuit card in the form of a preset identity identification information summary.
The electronic device of claim 6 wherein said computer program is executed by a processor to implement the following steps:

Receiving a plurality of preset identification information collected by the light detecting device, and converting a plurality of preset identification information into a preset identification information summary by using a cryptographic hash function; the preset identification information including face information , fingerprint information, iris information, blood volume information.
The electronic device of claim 6 wherein said computer program is further executed by said processor to:

The authentication key is stored in an integrated circuit card, and the authentication key includes a public key and a private key;

Acquiring the public key in the universal integrated circuit card, and using the RSA encryption algorithm to apply the public key to encrypt the preset identification information summary to obtain preset encryption information, where the preset encryption information includes the encrypted preset identification information summary;

After receiving the identity information to be authenticated, the cryptographic hash function is used to convert the identity information to be authenticated into a digest of the identity information to be authenticated; and the RSA encryption algorithm public key is used to encrypt the identity information to be authenticated, and the encrypted information to be authenticated is obtained. The authentication encrypted information includes an encrypted identity information to be authenticated;

Obtain a private key in the universal integrated circuit card, use the RSA encryption algorithm to apply the private key to decrypt the preset encrypted information, obtain a preset identity identification information summary, and compare the preset identity identification information summary with the identity information to be authenticated, if If the match is successful, the identity authentication succeeds, otherwise the authentication fails.
The electronic device according to claim 8, wherein the computer program is further executed by the processor to: after receiving the preset identification information, randomly generating the first random digital string and the first random filling blank The first random padding blank is a character that is randomly generated and filled in a preset identity information digest; the preset encryption information further includes an encrypted first random digit string and a first random padding blank;

After receiving the identity information to be authenticated, randomly generating a second random number string and a second random padding blank, where the second random padding blank is a character randomly generated and filled in the digest of the identity information to be authenticated;

Obtaining a private key in the universal integrated circuit card, and using the RSA encryption algorithm to apply the private key to decrypt the preset encrypted information to obtain the first random digital string and the first random padding blank;

Comparing whether the first random number string and the second random number string, the first random padding blank and the second random padding blank match successfully, if yes, the identity authentication succeeds, otherwise the authentication fails.
The electronic device of claim 9, wherein the computer program is further executed by the processor to:

Receiving an encryption level setting instruction, setting an encryption level of the electronic device, where the encryption level includes a first encryption level, a second encryption level, and a third encryption level;

When the electronic device is in the first encryption level, the condition for determining the identity authentication success is a preset identity identification information digest and a to-be-authenticated identity information digest, a first random digit string and a second random digit string, a first random padding blank and The three random fill blanks are all successfully matched;

When the electronic device is in the second encryption level, the condition for determining that the identity authentication succeeds is that the preset identity information summary is successfully matched with the identity to be authenticated, and the first random number string and the second random number word, the first random padding Any one of the blank and the second random fill blank is successfully matched;

When the electronic device is in the third encryption level, the condition for determining the identity authentication success is that the preset identity information digest is successfully matched with the identity information to be authenticated.