WO2019049453A1

WO2019049453A1 - Deposition mask, method for manufacturing deposition mask, and method for manufacturing display device

Info

Publication number: WO2019049453A1
Application number: PCT/JP2018/022525
Authority: WO
Inventors: 康克觀田; 木村　泰一; 健太平賀; 松浦　由紀
Original assignee: 株式会社ジャパンディスプレイ
Priority date: 2017-09-07
Filing date: 2018-06-13
Publication date: 2019-03-14
Also published as: JP2019044253A

Abstract

The present invention provides a deposition mask. The deposition mask has a metal plate that has: an upper surface; a lower surface, which is positioned below the upper surface, and which is disposed further than the upper surface from a substrate to be subjected to deposition; and an opening penetrating from the upper surface to the lower surface. The side wall of the opening has a first surface, and a second surface positioned below the first surface. A first angle formed between the first surface and the upper surface is larger than a second angle formed between the second surface and the upper surface. The first angle and the second angle are larger than 0° but smaller than 90°.

Description

Vapor deposition mask, method of manufacturing vapor deposition mask, and method of manufacturing display device

One of the embodiments of the present invention relates to a deposition mask, a method for manufacturing a deposition mask, or a method for manufacturing a display device using a deposition mask.

Examples of the flat panel display device include a liquid crystal display device and an organic EL (Electroluminescence) display device. These display devices are structures in which thin films containing various materials such as insulators, semiconductors, and conductors are laminated on a substrate, and these thin films are appropriately patterned and connected to exhibit the function as a display device. Be done.

Methods of forming a thin film are roughly classified into a gas phase method, a liquid phase method, and a solid phase method. Vapor phase methods are classified into physical vapor phase methods and chemical vapor phase methods, and vapor deposition methods are known as representative examples of the former. Among the vapor deposition methods, the simplest method is vacuum deposition, and heating the material in a high vacuum to sublime or evaporate the material to generate a vapor of the material (hereinafter collectively referred to as vaporization), A thin film of the material can be obtained by solidifying and depositing the vapor in a target area (hereinafter, a deposition area). At this time, a mask (vapor deposition mask) is used in order to selectively form a thin film in the vapor deposition region and not deposit material in the other regions (hereinafter, non-vapor deposition region) (see Patent Documents 1 to 3) .

JP 2005-154879 A Japanese Patent Application Laid-Open No. 2003-45658 Unexamined-Japanese-Patent No. 2006-152396

One of the embodiments of the present invention is a deposition mask. The deposition mask has a metal plate having a top surface, a bottom surface located below the top surface, a bottom surface located farther than the top surface with respect to the substrate to be provided for deposition, and an opening penetrating from the top surface to the bottom surface. The sidewall of the opening has a first surface and a second surface located below the first surface. A first angle formed by the first surface and the upper surface is larger than a second angle formed by the second surface and the upper surface. The first angle and the second angle are greater than 0 ° and less than 90 °.

One of the embodiments of the present invention is a method for manufacturing a deposition mask. In this manufacturing method, a photoresist is coated on a substrate, a photoresist is exposed using a photomask having a plurality of light transmitting regions, and a light shielding region surrounding the plurality of light transmitting regions, and the photoresist is not exposed. Removing the portion to form a resist mask having a plurality of openings, forming a plating pattern in the plurality of openings using electrolytic plating, and removing the substrate from the plating pattern.

One of the embodiments of the present invention is a method of manufacturing a display device. The manufacturing method includes forming a plurality of pixel electrodes on a substrate, and placing the substrate on a deposition source configured to be filled with a material such that the pixel electrode is located between the substrate and the deposition source. And disposing a deposition mask between the deposition source and the substrate, vaporizing the material, and forming a film of the material covering the pixel electrode. The deposition mask has a metal plate, and the metal plate has an upper surface, a lower surface located below the upper surface and disposed farther than the upper surface with respect to the substrate, and an opening penetrating from the upper surface to the lower surface. The sidewall of the opening has a first surface and a second surface located below the first surface. A first angle formed by the first surface and the upper surface is larger than a second angle formed by the second surface and the upper surface. The first angle and the second angle are greater than 0 ° and less than 90 °.

One of the embodiments of the present invention is a deposition mask. The deposition mask has a metal plate having an upper surface, a lower surface located below the upper surface and located farther than the upper surface with respect to the substrate to be provided for evaporation, and a plurality of openings penetrating from the upper surface to the lower surface. . The side surface of the metal plate in the region between two adjacent openings of the plurality of openings has a first surface and a second surface located below the first surface. A first angle formed by the first surface and the upper surface is larger than a second angle formed by the second surface and the upper surface. The first angle and the second angle are greater than 0 ° and less than 90 °.

One of the embodiments of the present invention is a deposition mask. The deposition mask has a metal plate having an upper surface, a lower surface located below the upper surface and located farther than the upper surface with respect to the substrate to be provided for evaporation, and a plurality of openings penetrating from the upper surface to the lower surface. . In a cross section passing through two adjacent openings of the plurality of openings, the metal plates have a first straight line and a second straight line connected to each other and sandwiched between the upper surface and the lower surface. A first angle formed by the first straight line and the upper surface is larger than a second angle formed by the second straight line and the upper surface. The first angle and the second angle are greater than 0 ° and less than 90 °.

One of the embodiments of the present invention is a method of manufacturing a display device. The manufacturing method includes forming a plurality of pixel electrodes on a substrate, and placing the substrate on a deposition source configured to be filled with a material such that the pixel electrode is located between the substrate and the deposition source. And disposing a deposition mask between the deposition source and the substrate, vaporizing the material, and forming a film of the material covering the pixel electrode. The deposition mask has a metal plate having an upper surface, a lower surface located below the upper surface, disposed lower than the upper surface with respect to the substrate, and a plurality of openings penetrating from the upper surface to the lower surface. The side surface of the metal plate in the region between two adjacent openings of the plurality of openings has a first surface and a second surface located below the first surface. A first angle formed by the first surface and the upper surface is larger than a second angle formed by the second surface and the upper surface. The first angle and the second angle are greater than 0 ° and less than 90 °.

One of the embodiments of the present invention is a method of manufacturing a display device. The manufacturing method includes forming a plurality of pixel electrodes on a substrate, and placing the substrate on a deposition source configured to be filled with a material such that the pixel electrode is located between the substrate and the deposition source. And disposing a deposition mask between the deposition source and the substrate, vaporizing the material, and forming a film of the material covering the pixel electrode. The deposition mask has a metal plate having an upper surface, a lower surface located below the upper surface, disposed lower than the upper surface with respect to the substrate, and a plurality of openings penetrating from the upper surface to the lower surface. In a cross section passing through two adjacent openings of the plurality of openings, the metal plates have a first straight line and a second straight line connected to each other and sandwiched between the upper surface and the lower surface. A first angle formed by the first straight line and the upper surface is larger than a second angle formed by the second straight line and the upper surface. The first angle and the second angle are greater than 0 ° and less than 90 °.

Typical top view and side view of a vapor deposition apparatus. Typical top view and side view of a vapor deposition apparatus. Typical sectional drawing of a vapor deposition source. The upper surface schematic diagram of a vapor deposition mask. The upper surface schematic diagram of a vapor deposition mask. The cross-sectional schematic diagram of a vapor deposition mask. The cross-sectional schematic diagram of a vapor deposition mask. The cross-sectional schematic diagram of a vapor deposition mask. The cross-sectional schematic diagram of a vapor deposition mask. The cross-sectional schematic diagram of a vapor deposition mask. Typical sectional drawing which shows the aspect of the vapor deposition method. Typical sectional drawing which shows the aspect of the vapor deposition method. Typical sectional drawing which shows the aspect of the vapor deposition method. Typical sectional drawing which shows the aspect of the vapor deposition method. Typical sectional drawing which shows the aspect of the vapor deposition method. Typical sectional drawing which shows the aspect of the vapor deposition method. Typical sectional drawing which shows the preparation methods of a vapor deposition mask. Typical sectional drawing which shows the preparation methods of a vapor deposition mask. Typical sectional drawing which shows the preparation methods of a vapor deposition mask. Typical sectional drawing which shows the preparation methods of a vapor deposition mask. Typical sectional drawing which shows the preparation methods of a vapor deposition mask. Typical sectional drawing which shows the preparation methods of a vapor deposition mask. Typical sectional drawing which shows the preparation methods of a vapor deposition mask. The upper surface schematic diagram of a display apparatus. FIG. 2 is a schematic cross-sectional view of a display device. FIG. 7 is a schematic cross-sectional view showing a method for manufacturing a display device. Typical sectional drawing which shows the preparation methods of a vapor deposition mask. FIG. 7 is a schematic cross-sectional view showing a method for manufacturing a display device. FIG. 7 is a schematic cross-sectional view showing a method for manufacturing a display device. Typical sectional drawing which shows the preparation methods of a vapor deposition mask. FIG. 7 is a schematic cross-sectional view showing a method for manufacturing a display device. Typical sectional drawing which shows the preparation methods of a vapor deposition mask.

Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. However, the present invention can be implemented in various modes without departing from the scope of the present invention, and the present invention is not interpreted as being limited to the description of the embodiments exemplified below.

Although the drawings may be schematically represented with respect to the width, thickness, shape, etc. of each part in comparison with the actual embodiment in order to clarify the explanation, the drawings are merely an example, and the interpretation of the present invention is limited. It is not something to do. In the present specification and the drawings, elements having the same functions as those described with reference to the drawings in the drawings may be denoted by the same reference numerals, and overlapping descriptions may be omitted.

In the present invention, when a plurality of films are formed by performing etching or light irradiation on a certain film, the plurality of films may have different functions and roles. However, the plurality of films are derived from the film formed as the same layer in the same step, and have the same layer structure and the same material. Therefore, these multiple films are defined as existing in the same layer.

In the present specification and claims, when expressing an aspect in which another structure is disposed on a certain structure, in the case where it is simply referred to as “above”, in a certain structure, unless otherwise specified. It includes both the case where another structure is arranged immediately above and the case where another structure is arranged above another structure via another structure so as to be in contact with each other.

First Embodiment
The vapor deposition mask which concerns on one of this embodiment of this invention, the vapor deposition apparatus using the same, and the formation method of a thin film are demonstrated.

[1. Deposition apparatus]
The deposition apparatus is composed of a plurality of chambers having various functions, and FIGS. 1A and 1B are a schematic top view and a side view of the deposition chamber 100 which is a part of the deposition apparatus. The deposition chamber 100 is separated from the adjacent chamber by the load lock door 102, and is configured to maintain the inside in a high vacuum reduced pressure state or a state filled with an inert gas such as nitrogen or argon. Therefore, a decompression device (not shown) and a gas suction and discharge mechanism are connected to the deposition chamber 100.

The deposition chamber 100 has a shape that can accommodate an object to be deposited. Hereinafter, an example in which a plate-like substrate 104 is used as the object will be described. In the example shown in FIGS. 1A and 1B, the deposition source 112 is disposed below the substrate 104. The deposition source 112 is filled with a material to be deposited. The material is heated and vaporized in the deposition source 112, and the vapor of the material cools and solidifies when it reaches the surface of the substrate 104, and the material is deposited and deposited on the substrate 104 (on the lower surface of the substrate 104 in FIG. 1B) Give a thin film of material. In the example shown in FIG. 1A, the deposition source 112 (also referred to as a linear source) having a generally rectangular shape and disposed along one side of the substrate 104 is provided, but the deposition source 112 may have any shape. The deposition source 112 may be a so-called point source which selectively overlaps the center of gravity of the substrate 104 and its vicinity. In the case of a point source, the relative positions of the substrate 104 and the deposition source 112 may be fixed, and a mechanism for rotating the substrate 104 may be provided.

When the linear source type deposition source 112 is used, the deposition chamber 100 is configured to move the substrate 104 and the deposition source 112 relative to each other. FIG. 1A shows an example in which the deposition source 112 is fixed and the substrate 104 is moved thereon. As shown in FIG. 1B, the deposition chamber 100 further includes a holder 108 for holding the substrate 104 and the deposition mask 106, a moving mechanism 110 for moving the holder 108, a shutter 114, and the like. The holder 108 maintains the positional relationship between the substrate 104 and the deposition mask 106, and the moving mechanism 110 allows the substrate 104 and the deposition mask 106 to move on the deposition source 112. The shutter 114 is provided on the deposition source 112 in order to shield the vapor of the material or allow the substrate 104 to reach, and the opening and closing is controlled by a control device (not shown).

The cross-sectional schematic diagram of the surface perpendicular | vertical to the longitudinal direction of the vapor deposition source 112 is shown in FIG. The vapor deposition source 112 has a heating unit 122 capable of holding the storage container 120 such as a crucible inside. As an optional configuration, the deposition source 112 may further include a deposition holder 124 for holding the heating unit 122.

The storage container 120 holds the material to be deposited, and can be removed from the heating unit 122 or from the deposition holder 124. The storage container 120 can include, for example, a metal such as tungsten, tantalum, molybdenum, titanium, nickel, or an alloy thereof. Alternatively, an inorganic insulator such as alumina, boron nitride, or zirconium oxide can be included. Similarly to the storage container 120, the heating unit 122 and the vapor deposition holder 124 can include the above-described metal, an alloy thereof, or an inorganic insulator.

The heating unit 122 is configured to heat the storage container 120 by a resistance heating method. Specifically, the heater 126 is mounted on the heating unit 122, and when the heater 126 is energized, the heating unit 122 is heated, the material in the storage container 120 is heated and vaporized, and the vapor of the material from the opening 130 is It is injected. As an optional configuration, a mesh-like metal plate 128 may be attached to the top of the storage container 120 so as to cover the opening 130 to prevent bumping of the material.

A guide portion provided with a pair of guide plates 132 may be provided on the top of the deposition source 112. At least a part of the guide plate 132 is inclined from the side surface of the storage container 120 or from the vertical direction, thereby controlling the spread angle of the material vapor (hereinafter referred to as injection angle) and having directivity in the vapor flight direction. You can The injection angle is determined by the angle θ _e (in degrees) between the two guide plates 132, and is appropriately adjusted depending on the size of the substrate 104 and the distance between the deposition source 112 and the substrate 104, for example, 40 ° or more and 80 ° or less, 50 ° More than 70 °, typically 60 °. The surfaces formed by the inclined surfaces of the guide plate 132 are the

critical surfaces

160a and 160b, and the vapor of the material flies in the space sandwiched by the

critical surfaces

160a and 160b. Although not shown, when the deposition source 112 is a point source, the guide plate 132 may have a shape that constitutes a part of the surface of a cone.

The material to be deposited can be selected from various materials, and any of organic compounds and inorganic compounds may be used. As the organic compound, for example, a light-emitting material or a carrier-transporting organic compound can be used. As the inorganic compound, metals, alloys thereof, metal oxides and the like can be used. A plurality of materials may be filled in one storage container 120 for film formation. Although not illustrated, the deposition chamber 100 may be configured to simultaneously heat different materials using a plurality of deposition sources.

[2. Deposition mask]
A schematic top view of the deposition mask 106 is shown in FIG. 3A. The deposition mask 106 includes a metal plate 140, and the metal plate 140 includes a plurality of openings 146 penetrating the metal plate 140. The area other than the opening 146 of the metal plate 140 is called a non-opening. The non-opening surrounds the opening 146. The deposition mask 106 further has a frame 142 surrounding the opening 146, and a connection 144 that surrounds the opening 146, contacts the frame 142 and the metal plate 140, and connects them to each other. During deposition, the deposition mask 106 and the substrate 104 are disposed such that the deposition area and the opening 146 overlap, and the non-deposition area and the non-opening overlap, and the vapor of the material passes through the opening 146 and the material is deposited on the deposition area . For example, as shown in the enlarged view (FIG. 3B) of the region surrounded by the dotted line in FIG. 3A, when the deposition regions are arranged in a stripe, the openings 146 are also provided in a stripe shape. The arrangement of the openings 146 is not necessarily limited to the stripe arrangement shown in FIGS. 3A and 3B, and may be formed in an arbitrary shape and arrangement so as to coincide with the deposition regions and not to overlap the openings 146.

The metal plate 140 and the connection portion 144 contain a zero-valent metal such as nickel, copper, titanium, chromium or the like, and preferably contain nickel. The compositions of the materials of the metal plate 140 and the connection portion 144 may be identical to each other. The frame 142 also contains a zero-valent metal, and the metal is selected from nickel, iron, cobalt, chromium, manganese and the like. For example, the frame 142 may contain an alloy containing iron and chromium, an alloy of iron, nickel and manganese, and the alloy may contain carbon.

A schematic cross-sectional view taken along the dashed-dotted line AA 'in FIG. 3B is shown in FIG. 4A. In FIG. 4A, the deposition mask 106 is disposed below the substrate 104. In this case, the deposition mask 106 is disposed between the substrate 104 and the deposition source 112 (not shown). Here, among the main surfaces (upper surface and lower surface) of the deposition mask 106 facing each other, the main surface located closer to the substrate 104 at the time of deposition is arranged farther from the upper surface (or first surface) 148 and the substrate 104 The main surface is defined as the lower surface (or second surface) 150. In the connection portion 144, among the main surfaces facing each other, the main surface located closer to the substrate 104 during deposition is defined as the upper surface (or the first surface), and the main surface located farther from the substrate 104 is defined as the lower surface. . The upper surface 148 of the deposition mask 106 and the upper surface of the connection portion 144 are located in the same plane.

Focusing on one opening 146, the opening 146 is a through hole penetrating from the upper surface 148 to the lower surface 150, and the shape and the area thereof are defined by the side wall 152 of the non-opening. The side wall 152 includes a first surface 152a and a second surface 152b located below the first surface 152a (ie, farther from the substrate 104) (FIG. 4B). The first surface 152a and the second surface 152b are both flat or substantially flat. The first surface 152 a and the second surface 152 b can touch each other at the boundary 154. In addition, as shown in the enlarged view (FIG. 4C) of the region 155 of FIG. 4B, the area between the first surface 152a and the second surface 152b does not affect the overall shape of the side wall 152. There may be a curved surface 152 d having That is, the first surface 152a and the second surface 152b may be connected via the curved surface 152d.

As shown in FIGS. 4A and 4B, the first surface 152a and the second surface 152b are both inclined from the direction (vertical direction) perpendicular to the upper surface 148. That is, both the first surface 152 a and the second surface 152 b are inclined from the upper surface 148 or the lower surface 150, and in the non-opening portion between the adjacent openings 146, the metal plate 140 is in the direction from the upper surface 148 toward the lower surface 150 It has a tapered shape that becomes gradually thinner. In other words, the angle θ ₁ (in degrees) between the first surface 152 a and the upper surface 148 and the angle θ ₂ (in degrees) between the second surface 152 b and the upper surface 148 are all greater than 0 ° and more than 90 °. And the angle θ ₁ is larger than the angle θ ₂ . The difference (θ ₁ -θ ₂ ) between the angle θ ₁ and the angle θ ₂ is preferably 8% to 15% of the angle θ ₁ and is, for example, 10% or 14%. More specifically, the angle theta ₁ is 80 ° 60 ° or more, alternatively at 65 ° or more 75 ° or less, typically 70 °. On the other hand, the angle theta ₂ is 50 ° to 70 ° or less, alternatively 55 ° or more 65 ° or less, typically 60 °. Angle theta ₁ is preferably ± 10% of the angle theta _e in the same or the angle theta _e,. Thus, the width D ₁ of the opening 146 at the upper surface 148 is smaller than the width D _{2 at the} lower surface 150 (FIG. 4A). The width D ₁ can be arbitrarily determined in accordance with the deposition area. When forming the light-emitting element of the organic EL display device using the evaporation mask 106, the width D ₁ is, for example, 5μm or 100μm or less, 10 [mu] m or more 50μm or less, alternatively at 10 [mu] m or more 30μm or less, typically 20 [mu] m.

The heights of the first surface 152a and the second surface 152b can be arbitrarily adjusted. That is, in the vertical direction, the distance T ₁ of the from upper surface 148 to the boundary 154 and the distance T ₂ of the from the boundary 154 to the lower surface 150 may be identical to one another or may be different. In the latter case, the distance T ₁ may be smaller or larger than the distance T _2. The distances T ₁ and T ₂ are 1 μm or more and 10 μm or less, 2.5 μm or more and 7.5 μm or less, and typically 5 μm or 10 μm, respectively.

Here, focusing on the non-opening between two adjacent openings 146, the side wall 152 is a side surface of the metal plate 140 facing the opening 146, and the side surface is a first surface 152a and a second surface 152b. It can be said that In addition, in a cross section parallel to the vertical direction (hereinafter simply referred to as a cut surface) passing through two adjacent openings 146, the metal plates 140 are connected to each other and sandwiched between the upper surface 148 and the lower surface 150. And a second straight line. In this case, the first straight line corresponds to the first surface 152a, and the second straight line corresponds to the second surface 152b. Similarly, the first angle theta ₁ is an angle which the first straight line and the upper surface 148 forms in the cut surface, the second angle theta ₂ is the angle formed by the second straight line and the top surface 148. Also, the boundary 154 corresponds to the intersection of the first straight line and the second straight line in the cutting plane. Although not shown, in the cut surface, a curve having a length that does not significantly affect the shape of the side wall 152 may exist between the first straight line and the second straight line. That is, the first straight line and the second straight line may be connected via this curve.

The shape of the non-opening portion between the openings 146 is not limited to the above-described shape. For example, as shown in FIG. 5A, the sidewall 152 may further include a third surface 152c between the first surface 152a and the second surface 152b. The third surface 152c is connected to the first surface 152a and the second surface 152b. In other words, in the non-opening between the two adjacent openings 146, the side surface of the metal plate 140 has the third surface 152c connected thereto between the first surface 152a and the second surface 152b. Can be Alternatively, in the cutting plane, the metal plate 140 can have a third straight line connected to the first straight line and the second straight line. In this case, the angle theta ₁ and the angle theta ₂ are the same, or substantially may be the same.

The third surface 152c (or third straight line) may be parallel to the top surface 148, as shown in FIG. 5A, or may be tilted from the top surface 148, as shown in FIG. 5B. In the latter case, the angle theta ₃ to the third surface 152c (or the third straight line) and the upper surface 148 forms a first angle theta ₁ and smaller than the second angle theta _2. Although not shown, the area between the first surface 152a and the third surface 152c and between the second surface 152b and the third surface 152c does not significantly affect the shape of the side wall 152. There may be a curved surface having That is, the first surface 152a and the third surface 152c, and the second surface 152b and the third surface 152c may be connected via these curved surfaces, respectively. Similarly, in the cutting plane, between the first straight line and the third straight line, and between the second straight line and the third straight line, the length does not affect the overall shape of the side wall 152. There may be a curve having That is, the first straight line and the third straight line, and the second straight line and the third straight line may be connected via these curves.

The material stored in the storage container 120 is heated and vaporized by the heater 126, and the obtained vapor passes through the opening 146 of the deposition mask 106, reaches the substrate 104, and solidifies and deposits. Thus, a thin film of material can be selectively formed in the deposition region.

[3. Deposition uniformity and process efficiency]
The positional relationship between the opening 146 and the deposition source 112 at the time of deposition will be described using schematic cross-sectional views shown in FIGS. 6A and 6B. Here, an aspect in which the deposition source 112 moves from left to right with respect to the substrate 104 and the deposition mask 106 is shown. In these figures, the top-bottom relation of the deposition source 112, the substrate 104, and the deposition mask 106 is opposite to that in FIGS. 4A to 5B in order to facilitate understanding. 6A shows an embodiment using a conventional deposition mask in which the side wall 152 is perpendicular to the upper surface 148, and FIG. 6B shows an embodiment using the deposition mask 106 according to the present embodiment. In these figures, one of the two intersections top 148 and side walls 152 make a P _1, the other one facing the P ₁ and P ₂ across the opening 146.

As described above, the evaporation source 112 is provided with a pair of guide plates 132, it determines the exit angle of the material by the angle theta _e of the guide plate 132, the spread of vapors is restricted. Specifically, most of the material vapors are two critical planes that are set at an angle of -θ _e / 2 ° to + θ _e / 2 ° from the normal through the center of the opening 130 (see FIG. 2) It injects in the range between 160a and 160b. Therefore, as shown in FIG. 6A, focusing on the deposition area overlapping the opening 146, the material vapor first reaches the deposition area when the critical surface 160a is at the top vertex of the upper side wall 152 of the metal plate 140 (ie, a time in contact with the side) of the lower surface 150 of the side wall 152 (time t = T _1), is the intersection of the critical surface 160a and the substrate 104, and a point is a point between points P ₁ and point P ₂ P The deposition of material is started from _three . Thereafter, (in the figure, rightward) traveling direction of the deposition source 112 to the point P ₃ as a starting point (in the figure, left) and its reverse deposition of the material begins in the region of.

Here, the vapor of the material reaches a point P _1, the opening 130 and the point P1 of the deposition source 112 is time T _2, which overlap in the vertical direction, which is later than time T _1. Therefore, in the period from time T ₁ of the T _2, the periphery of the already point P ₃ is deposited materials. Further, the deposition of the material at the point P _1, when the critical surface 160b passes through the point P _1, that is, ends at time T _3. However the time T ₃ after the critical surface 160b is deposited at the point P ₃ in the material until the time T ₄ which passes through the point P ₃ is continued. Therefore, region 156 (hereinafter, the shadow area hereinafter) of the point P ₃ from the point P ₁ the thickness of the film of the material is not uniform, also the thickness of the as the film approaches from the point P ₃ to the point P ₁ Decrease. Such a shadow region 156 also occurs on the point P ₂ side, and from the intersection point P ₄ of the critical surface 160 b and the substrate 104 to the point P ₂ at the time when the critical surface 160 b contacts the side on the lower surface 150 of the side wall 152 (time T ₅ ) Is the shadow area 156. Compared to the area from the point P ₃ to the point P _4, the thickness of the film in the shadow region 156 is uneven, and smaller. Therefore, the thickness of the film becomes uneven in the deposition region.

Such shadowed areas 156 can be reduced by thinning the metal plate 140. However, when the thickness of the metal plate 140 is reduced, the mechanical strength is reduced, and the deposition mask 106 is easily deformed, so that the deformation of the opening 146 or the deviation of the deposition region from the opening 146 is likely to occur.

Similarly, in the present embodiment, as shown in FIG. 6B, the vapor of the material first reaches the deposition region when the critical surface 160a is at the top of the second surface 152b of the metal plate 140 (ie, the second a time in contact with the side) of the lower surface 150 of the face 152b of the (time t = _T'1), the deposition of the material is started from the point P ₃ is the intersection of the critical surface 160a and the substrate 104. However, as described above, the metal plate 140 of the vapor deposition mask 106 of the present embodiment has a tapered shape that gradually narrows in the direction from the upper surface 148 toward the lower surface 150, and the second surface 152 b is angled θ ₂ from the upper surface 148. Lean. Therefore, time _T'1 is before the time T _1, as a result, the point P ₃ becomes closer to a point P _1, the shadow area 156 is narrow.

Further, as described above, the first surface 152a is an angle theta ₁ tilts from the top 148. Therefore, the deposition of the material is started at the point P1, not the time T _2, the deposition source 112 passes over the point P _1, from faster time _T'2 (opening 130 of the deposition source 112 it Time to pass the tangent of the first surface 152a). Therefore, a small difference in time that deposition of the material begins at the point P ₁ from the time at point P ₃ material deposition begins. Similarly, the point P _1, since the point P ₃ of Oite material deposition is smaller interval time _T'3 and _T'4 to end, the difference in thickness of the film at the point P ₁ and the point P ₃ is significantly smaller Become. The tendency described above is the same on the point P ₂ side, and the point P ₄ is closer to the point P ₂ , and the difference in film thickness between the point P ₂ and the point P ₄ is small.

Thus, by applying the present embodiment, it is possible to narrow the shadow area 156 and to reduce the difference in film thickness between the shadow area 156 and other areas. Moreover, in the vapor deposition mask 106 of this embodiment, it is not necessary to make the thickness of the metal plate 140 small. For this reason, the nonuniformity of the film thickness in a vapor deposition area | region can be reduced, maintaining the mechanical strength of the vapor deposition mask 106, and a more precise thin film formation becomes possible.

Material is gradually deposited on the deposition mask 106 by repeating the deposition. Specifically, as shown in FIG. 7A, a deposition film 158 of the material is formed on the deposition mask 106. When the deposition film 158 is formed, the apparent thickness of the deposition mask 106 is increased, so that the material vapor first reaches the deposition region at a critical plane at the intersection line where the top surface and the side surface of the deposition film 158 intersect. It will be when 160a contacts (FIG. 7A). Therefore, it is between _P'4 and the point P ₁ point close to the point P ₁ than the shadow area 156 between _P'3 and the point P ₁ point close to the point P ₂ than the point P _3, and the point P _4, It expands as the deposited film 158 is formed.

Even when the deposition mask 106 of the present embodiment is used, as shown in FIG. 7B, the shadow region 156 is between the point P ′ ₃ and the point P ₁ and the point P ′ ₄ and the point as the deposited film 158 is formed. It is between P _1, to expand. However, since the shadow area 156 in the absence of the deposited film 158 is very small, the enlarged shadow area 156 has less influence on the entire deposition area. For this reason, since it is possible to form the deposition film 158 having a larger thickness as compared with the conventional deposition mask, it becomes possible to lower the frequency of mask replacement, and the efficiency of the deposition process is improved to thereby reduce the deposition cost. It can be reduced. In addition, since the frequency of mask replacement is reduced, the number of deposition masks 106 required can be reduced, and the cost and place for storing the deposition masks 106 can also be reduced.

In addition, when the deposited film 158 is formed, if the sidewall 152 is perpendicular to the upper surface 148 as in a conventional deposition mask, the deposited film 158 has a bend having a large angle. (See dashed arrow in FIG. 8A). Therefore, when internal stress is accumulated in the deposited film 158, the deposited film 158 is broken from the bent portion and the vicinity thereof, which causes the generation of foreign matter. On the other hand, in the vapor deposition mask 106 of the present embodiment, the angle of the bent portion of the deposited film 158 is relatively small (see the broken arrow in FIG. 8B). Therefore, since the deposited film 158 can be relatively stably present, the generation of foreign matter due to the destruction of the deposited film 158 can be largely suppressed.

Second Embodiment
In this embodiment, a method of manufacturing the deposition mask 106 described in the first embodiment will be described with reference to FIGS. 9A to 12. 9A to 11B are schematic cross-sectional views corresponding to FIG. 4A, which are upside down from FIG. 4A. The contents described in the first embodiment may be omitted.

As described below, the deposition mask 106 can be formed by electroforming. Specifically, first, a resist 172 is applied on a substrate 170 which is a base material (FIG. 9A). The surface of the substrate 170 has conductivity. Therefore, the substrate 170 contains copper, metal such as aluminum, titanium, iron, nickel, cobalt, chromium, molybdenum, manganese, or an alloy of these. In the case of an alloy, for example, an alloy containing iron and chromium, an alloy of iron, nickel, and manganese may be used, and the alloy may contain carbon. Alternatively, a substrate in which a film of the above-described metal or alloy is formed on an insulating base material containing glass, quartz, or plastic may be used.

The resist 172 is a photosensitive resin, and a known material can be used. As a photosensitive resin, negative resin is preferable.

Next, as shown in FIG. 9B, a photomask 174 is disposed on the resist 172. The photomask 174 may be provided in contact with the resist 172 or may be provided so as to be separated from the resist 172. The photomask 174 is a halftone mask. Specifically, the photomask 174 has a substrate 175 containing glass or quartz, and includes a light transmitting portion 174a, a light shielding portion 174b, and a halftone portion 174c formed on the substrate 175. In the region where the opening 146 is provided, one light transmitting portion 174a is surrounded by the halftone portion 174c, and the halftone portion 174c is surrounded by the light shielding portion 174b. The light transmitting portion 174a preferably has a high transmittance to light (hereinafter, irradiation light) used for exposing the resist 172, and the transmittance is, for example, 75% to 100%, or 80% to 100%. The light shielding portion 174b is a region that blocks the irradiation light, and preferably has a small transmittance to the irradiation light. The transmittance is, for example, 0% or more and 5% or less, 0% or more and 2% or less, or 0% or more and 1% or less, and may be substantially 0%. The halftone unit 174c partially transmits the irradiation light and blocks a part. Therefore, the transmittance to the irradiation light is 20% or more and 60% or less, 30% or more and 50% or less, and typically about 40% or 40%. The width of the halftone portion 174c is 1 μm to 10 μm, 2 μm to 8 μm, 2 μm to 6 μm, and typically 6 μm.

Thereafter, the resist 172 is exposed using an exposure machine to cure the exposed area. Thereafter, development is performed to obtain a patterned resist mask 176 on the substrate 170 (FIG. 10A). At this time, the resist mask 176 located in the region corresponding to the opening 146 has a shape such that the width is wider as the distance from the substrate 170 is increased (see the enlarged view). This shape corresponds to the non-opening portion of the metal plate 140 to be formed later. Specifically, the sidewall of the resist mask 176 in this region has two faces, and the angle θ ′ ₁ between the face closer to the substrate 170 and the face in which the resist mask 176 and the substrate 170 are in contact with each other is 180 It becomes -θ ₁ (unit °). On the other hand, the far side of the surface from the substrate 170, the angle [theta] & apos ₂ the boundary surface of the two surfaces forms becomes 180-theta ₂ (Unit °). The reason why such a shape is formed will be described later.

Next, a plating pattern is formed in a region not covered by the resist mask 176 using electrolytic plating to form a metal plate 140 (FIG. 10B). The formation of the plating pattern may be performed in one step or may be divided into several steps. In the case of multiple steps, electrolytic plating may be performed such that different metals are formed in different steps. Alternatively, electrolytic plating may be performed such that the upper surface of the plating pattern is higher than the upper surface of the resist mask 176, and then the upper surface of the plating pattern may be planarized by polishing the surface. The shape of the plating pattern is determined by the shape of the resist mask 176. Therefore, a tapered shape as shown in FIG. 4B can be applied to the non-opening portion of the metal plate 140.

Thereafter, the resist mask 176 is removed by etching and / or ashing, and the frame 142 is bonded onto the metal plate 140 (FIG. 11A). Bonding may be performed using an adhesive containing a resin, or may be performed via a metal adhesive layer. In the latter case, for example, a metal adhesion layer containing a metal having a relatively low melting point such as zinc or tin or an alloy thereof and a few% (eg 3 to 10%, or 5 to 8%) phosphorus is used. Bonding can be performed by applying pressure between the frame 142 and the metal plate 140 through the metal adhesive layer while heating.

Thereafter, a resist mask 178 is formed in the area other than the region where the connection portion 144 is to be formed, and electrolytic plating is performed to form the connection portion 144 (FIG. 11B). The resist mask 178 can be manufactured by using a known method, and either a negative resist or a positive resist may be used. Thereby, the connection part 144 contacts the frame 142 and the metal plate 140 which is a plating pattern, and connects them mutually. Finally, the resist mask 178 is removed, and the substrate 170 is removed, whereby the deposition mask 106 is obtained.

As one of the reasons why the shape of the resist mask 176 described above can be obtained, the following reasons can be considered. In the case where the resist 172 is a negative type, polymerization and crosslinking progress by absorbing the irradiation light, and the resin 172 is cured. In the halftone portion 174c, as a result of interference between the irradiation light passing through the halftone portion 174c and the irradiation light passing through the light transmitting portion 174a, the depth at which the resist 172 covered by the halftone portion 174c can absorb the irradiation light is The distance from the halftone portion 174c) depends on the distance from the light transmitting portion 174a. For this reason, as shown in FIG. 12, in the inside of the resist 172, a region 182 mainly contributing the curing of the resist 172 to the irradiation light which has mainly passed through the halftone portion 174c with the dashed line 180 as a boundary Regions 184 in which the irradiation light transmitted through the portion 174 a contributes to the hardening of the resist 172 are created. As a result, a photosensitive region and a non-photosensitive region separated by two

straight lines

186 and 188 are generated inside the resist 172. Due to the generation of the photosensitive region and the non-photosensitive region, a resist mask 176 having the above-described shape is formed.

As described above, the resist mask 176 is formed from the resist 172 using the photomask 174 which is a halftone mask, and the subsequent deposition using the electroforming plating method facilitates deposition of the embodiment having a specific shape. It is possible to form a mask 106.

Third Embodiment
In this embodiment, a method of manufacturing the display device 200 to which a thin film formation method using the deposition mask 106 is applied will be described. Here, a method of manufacturing an organic EL display device in which a plurality of pixels each having an organic light emitting element (hereinafter, light emitting element) is formed on the substrate 202 as the display device 200 will be described. The contents described in the first and second embodiments may be omitted.

[1. Array substrate]
The upper surface schematic diagram of the display apparatus 200 is shown in FIG. The display device 200 includes a substrate 202, and a driver circuit 206 (a gate driver circuit 206a and a source driver circuit 206b) for driving the plurality of pixels 204 and the pixels 204 is formed thereon. The plurality of pixels 204 are periodically arranged to define a display area 205. As described later, each pixel 204 is provided with a light emitting element 260.

The drive circuit 206 is disposed outside the display area 205 (peripheral area). From the display area 205 and the drive circuit 206, various wirings (not shown) formed of a patterned conductive film extend to one side of the substrate 202, and are exposed near the end portion of the substrate 202 to form a terminal 207. The terminals 207 are electrically connected to a flexible printed circuit (FPC) (not shown), and various signals for driving the display device 200 are input to the driving circuit 206 and the pixels 204 through the terminals 207. Although not shown, a drive IC having an integrated circuit may be further mounted together with the drive circuit 206 or in place of a part thereof.

FIG. 14 is a schematic cross-sectional view across two adjacent pixels 204. A pixel circuit is formed in each pixel 204. The configuration of the pixel circuit is arbitrary, and FIG. 14 shows the drive transistor 210, the storage capacitor 230, the additional capacitor 250, and the light emitting element 260.

Each element included in the pixel circuit is provided on the substrate 202 via the undercoat 208. The driving transistor 210 includes a semiconductor film 212, a gate insulating film 214, a gate electrode 216, a drain electrode 220, and a source electrode 222. The gate electrode 216 is arranged to intersect at least a part of the semiconductor film 212 with the gate insulating film 214 interposed therebetween, and a channel 212 c is formed in a region where the semiconductor film 212 and the gate electrode 216 overlap. The semiconductor film 212 further includes a source region 212 a and a drain region 212 b which sandwich the channel 212 c.

A capacitor electrode 232 present in the same layer as the gate electrode 216 is provided to overlap with the source region 212 a through the gate insulating film 214. An interlayer insulating film 218 is provided over the gate electrode 216 and the capacitor electrode 232. In the interlayer insulating film 218 and the gate insulating film 214, an opening reaching the drain region 212b and the source region 212a is formed, and the drain electrode 220 and the source electrode 222 are disposed so as to cover the opening. A part of the source electrode 222 overlaps with a part of the source region 212a and the capacitor electrode 232 via the interlayer insulating film 218, and a part of the source region 212a, the gate insulating film 214, the capacitor electrode 232, the interlayer insulating film 218, and A part of the source electrode 222 forms a storage capacitor 230.

A planarization film 240 is further provided on the drive transistor 210 and the storage capacitor 230. The planarization film 240 has an opening reaching the source electrode 222, and a connection electrode 242 covering the opening and a part of the top surface of the planarization film 240 is provided in contact with the source electrode 222. An additional capacitance electrode 252 is further provided on the planarizing film 240, and a capacitance insulating film 254 is further formed to cover the connection electrode 242 and the additional capacitance electrode 252. The capacitive insulating film 254 does not cover a part of the connection electrode 242 at the opening of the planarization film 240, and exposes the upper surface of the connection electrode 242. Accordingly, electrical connection between the first electrode (hereinafter, pixel electrode) 262 and the source electrode 222 of the light emitting element 260 provided thereon can be enabled through the connection electrode 242. The capacitor insulating film 254 may be provided with an opening 256 for permitting contact between the partition wall 258 provided thereover and the planarization film 240. Impurities in the planarization layer 240 can be removed through the openings 256, which can improve the reliability of the light emitting device 260. Note that the formation of the connection electrode 242 and the opening 256 is optional.

A pixel electrode 262 is provided on the capacitive insulating film 254 so as to cover the connection electrode 242 and the additional capacitance electrode 252. The capacitive insulating film 254 is sandwiched between the additional capacitance electrode 252 and the pixel electrode 262, and an additional capacitance 250 is constructed by this structure. The pixel electrode 262 is shared by the additional capacitance 250 and the light emitting element 260. Over the pixel electrode 262, a partition wall 258 covering an end of the pixel electrode 262 is provided. The substrate 202 and the structure from the undercoat 208 to the barrier rib 258 are also collectively referred to as an array substrate. The array substrate can be manufactured by applying known materials and methods, and thus the description thereof is omitted.

[2. Light emitting element and method for forming the same]
An EL layer 264 and a second electrode (hereinafter referred to as an opposing electrode) 272 are provided so as to cover the pixel electrode 262 and the partition 258. As structures and materials of the pixel electrode 262, the counter electrode 272, and the EL layer 264, known materials can be applied. For example, the EL layer 264 is formed by appropriately combining various functional layers such as a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, a hole block layer, an electron block layer, and an exciton block layer. . In the example shown in FIG. 14, a hole injecting / transporting layer 266, a light emitting layer 268 (

light emitting layers

268a, 268b), and an electron injecting / transporting layer 270 are shown as representative layers constituting the EL layer 264.

The structure of the EL layer 264 may be the same between all the pixels 204, and the EL layer 264 may be formed so that a part of the structure is different between the adjacent pixels 204. For example, the pixels 204 may be configured such that the structure or material of the light emitting layer 268 differs between adjacent pixels 204, and the other layers have the same structure. In the example shown in FIG. 14, the hole injection / transport layer 266 and the electron injection / transport layer 270 are provided commonly to all the pixels 204 and shared by all the pixels 204. On the other hand, the light emitting layer 268 differs in structure between adjacent pixels 204. The counter electrode 272 covers the plurality of pixels 204 and is shared by the plurality of pixels 204. The pixel electrode 262, the EL layer 264, and the counter electrode 272 construct a light emitting element 260.

The EL layer 264 and the counter electrode 272 can be formed using the evaporation mask 106 according to the embodiment of the present invention. The formation of the EL layer 264 and the counter electrode 272 will be described below with reference to FIGS. 15A to 18B. Note that although the EL layer 264 and the counter electrode 272 are illustrated as being formed over the partition wall 258 and the pixel electrode 262 in these drawings, the evaporation source 112 is disposed under the substrate 202 at the time of evaporation. The array substrate is disposed so as to face the deposition source 112, that is, the partition wall 258 and the pixel electrode 262 are closer to the deposition source 112 than the substrate 202.

First, as shown in FIGS. 15A and 15B, the hole injecting / transporting layer 266 is formed on the array substrate using a vapor deposition method. Since the hole injection / transport layer 266 is provided so as to be shared by all the pixels 204, the deposition mask 106 used has one opening 146 overlapping the entire display area 205. Although details are omitted, the deposition mask 106 is disposed between the array substrate and the deposition source 112 so that the opening 146 overlaps the display region 205, and the material contained in the hole injection / transport layer 266 is vaporized in the deposition source 112 Thus, the hole injection / transport layer 266 is formed.

Subsequently, the light emitting layer 268 is formed. When full-color display is performed, a plurality of pixels 204 that emit red light, pixels 204 that emit blue light, and pixels 204 that emit green light are arranged in the display region 205, respectively. In the case where the pixels 204 are arranged in a stripe, normally, the pixels 204 having different emission colors are periodically arranged in order, and the light emitting layer 268 is formed at different stages for each emission color. Therefore, when three types of pixels 204 emitting red, blue and green are arranged in stripes, as shown schematically in FIG. 16, the opening 146 overlaps the pixel 204a and the non-opening portion overlaps the

pixels

204b and 204c. A deposition mask 106 is formed. In this case, the width W of the non-opening portion of the metal plate 140 is twice the pitch of the pixels 204.

Thus, the deposition mask 106 provided with the opening 146 is such that the opening 146 overlaps the pixel 204 a, the non-opening portion overlaps the

other pixels

204 b and 204 c, and the upper surface 148 is closer to the substrate 202 than the lower surface 150. (FIG. 17A), and the material of the light emitting layer 268a of the pixel 204a is deposited. Thus, the light emitting layer 268a is selectively formed on the pixel electrode 262 of the pixel 204a (FIG. 17B). In FIG. 17A, the deposition mask 106 is disposed in contact with the hole injection / transport layer 266 during deposition, but the deposition mask 106 may be disposed in contact with the partition wall 258, or the partition 258 or the hole implantation It may be arranged to be separated from the transport layer 266.

After this, the light emitting layer 268 b is formed in the same manner as the formation of the light emitting layer 268 a. That is, the deposition mask 106 is disposed such that the opening 146 overlaps the pixel 204b, the non-opening overlaps the

other pixels

204a and 204c, and the upper surface 148 is closer to the substrate 202 than the lower surface 150 (FIG. 18A). , The material of the light emitting layer 268 b of the pixel 204 b is deposited. Thus, the light emitting layer 268 b is selectively formed on the pixel electrode 262 of the pixel 204 b (FIG. 18B). The same applies to the formation of the light emitting layer 268c on the pixel 204c.

Subsequently, the electron injection / transport layer 270 and the counter electrode 272 are formed. Since these are also provided on all the pixels 204 and shared by all the pixels 204, they can be formed using a deposition mask 106 similar to the hole injection / transport layer 266. Thereby, the state shown in FIG. 14 can be obtained. Although not illustrated, an optical adjustment layer or a polarizing plate for preparing light from the light emitting layer 268, a protective film for protecting the light emitting element 260, or an opposite substrate may be provided on the opposite electrode 272.

As described in the first embodiment, by using the deposition mask 106 according to the embodiment of the present invention, the generation of the shadow region 156 is significantly suppressed in each pixel 204, and the thickness of the obtained film is made uniform. can do. Therefore, uniform light emission can be obtained in each pixel 204, and it is possible to prevent the reduction of the light emitting region in each pixel 204 and reduce the distribution of luminance.

The embodiments described above as the embodiments of the present invention can be implemented in combination as appropriate as long as they do not contradict each other. In addition, those in which a person skilled in the art appropriately adds, deletes or changes the design of components based on the display device of each embodiment or those in which steps are added, omitted or conditions changed are also included in the present invention. As long as it comprises the gist, it is included in the scope of the present invention.

In the present specification, although the case of an EL display device is mainly illustrated as a disclosed example, an electronic paper type display having another self-light emitting display device, a liquid crystal display device, or an electrophoretic element as another application example Devices include any flat panel type display device. Moreover, it is applicable without particular limitation from medium size to large size.

Even if other effects or effects different from the effects brought about by the aspects of the above-described embodiments are apparent from the description of the present specification or those which can be easily predicted by those skilled in the art, it is natural. It is understood that the present invention provides.

100: deposition chamber, 102: load lock door, 104: substrate, 106: deposition mask, 108: holder, 110: moving mechanism, 112: deposition source, 114: shutter, 120: storage container, 122: heating unit, 124: Deposition holder, 126: heater, 128: metal plate, 130: opening, 132: guide plate, 140: metal plate, 142: frame, 144: connection, 146: opening, 148: upper surface, 150: lower surface, 152: Side wall, 152a: first surface, 152b: second surface, 152c: third surface, 152d: curved surface, 154: boundary, region 155, 156: shadow region, 158: deposited film, 160a: critical surface, 160b : Critical plane, 170: Substrate, 172: Resist, 174: Photo mask, 174 a: Translucent part, 174 b: Shading part, 174 c Halftone portion 176: resist mask 178: resist mask 180: chain line 182: area 184: area 186: straight line 188: straight line 200: display device 202: substrate 204: pixel 204a: pixel , 204b: pixel, 204c: pixel, 205: display region, 206: drive circuit, 206a: gate side drive circuit, 206b: source side drive circuit, 207: terminal, 208: undercoat, 210: drive transistor, 212: semiconductor Film 212a: source region 212b: drain region 212c: channel 214: gate insulating film 216: gate electrode 218: interlayer insulating film 220: drain electrode 222: source electrode 230: storage capacity 232: Capacitance electrode, 240: flattening film, 242: connection electrode, 250: additional capacitance, 2 2: Storage capacitor electrode 254: Capacitive insulating film 256: Opening 258: Partition wall 260: Light emitting element 262: Pixel electrode 264: EL layer 266: Hole injection / transport layer 268: Light emitting layer 268a: Light emitting layer, 268b: light emitting layer, 268c: light emitting layer, 270: electron injection / transporting layer, 272: counter electrode

Claims

Top surface,
A lower surface located below the upper surface and located farther than the upper surface with respect to a substrate to be subjected to deposition;
And a metal plate having an opening penetrating from the upper surface to the lower surface,
The side wall of the opening has a first surface and a second surface located below the first surface,
A first angle formed by the first surface and the upper surface is larger than a second angle formed by the second surface and the upper surface,
An evaporation mask, wherein the first angle and the second angle are larger than 0 ° and smaller than 90 °.
The first angle is 60 degrees or more and 80 degrees or less,
The deposition mask according to claim 1, wherein the second angle is 50 ° or more and 70 ° or less.
The deposition mask according to claim 1, wherein a distance from the upper surface to the boundary between the first surface and the second surface is smaller than a distance from the boundary to the lower surface in a direction perpendicular to the upper surface.
The side wall further has a third surface between the first surface and the second surface,
The deposition mask according to claim 1, wherein a third angle formed by the third surface and the upper surface is smaller than the first angle and the second angle.
The deposition mask according to claim 4, wherein the third surface is parallel to the upper surface.
A frame surrounding the opening;
The deposition mask according to claim 1, further comprising a connection portion in contact with the metal plate and the frame.
Apply a photoresist on the substrate,
Exposing the photoresist using a photomask having a plurality of light transmitting regions and a light shielding region surrounding the plurality of light transmitting regions;
Forming a resist mask having a plurality of openings by removing the unexposed portion of the photoresist;
Forming a plating pattern in the plurality of openings using electrolytic plating;
A method for producing a deposition mask, comprising removing the substrate from the plating pattern.
The light transmitting region is
The first area,
The method according to claim 7, further comprising: a second area surrounding the first area and having a light transmittance lower than that of the first area.
The method according to claim 8, wherein the light transmittance of the second region is 20% or more and 60% or less.
The method according to claim 8, wherein the width of the second region is 2 μm to 6 μm.
The method according to claim 7, further comprising forming a frame surrounding the plurality of openings on the plating pattern.
The method according to claim 11, further comprising connecting the side surface of the frame to the plating pattern using an electrolytic plating method.
Forming a plurality of pixel electrodes on the substrate;
Placing the substrate on a deposition source configured to be filled with a material such that the pixel electrode is located between the substrate and the deposition source;
Placing a deposition mask between the deposition source and the substrate;
Evaporating the material to form a film of the material covering the pixel electrode;
The deposition mask is
Top surface,
A lower surface located below the upper surface and located farther than the upper surface with respect to the substrate;
And a metal plate having an opening penetrating from the upper surface to the lower surface,
The side wall of the opening has a first surface and a second surface located below the first surface,
A first angle formed by the first surface and the upper surface is larger than a second angle formed by the second surface and the upper surface,
A method of manufacturing a display device, wherein the first angle and the second angle are larger than 0 ° and smaller than 90 °.
The first angle is 60 degrees or more and 80 degrees or less,
The method according to claim 13, wherein the second angle is 50 degrees or more and 70 degrees or less.
The deposition source is
A container configured to be filled with said material and having an opening through which said material vapor passes;
It has a guide part located on the container and provided with a pair of guide plates,
The method according to claim 13, wherein the second angle is the same as the angle between the guide plates.
The method according to claim 13, wherein the distance from the upper surface to the boundary between the first surface and the second surface in the direction perpendicular to the upper surface is the same as the distance from the boundary to the lower surface. .
The side wall further has a third surface between the first surface and the second surface,
The method according to claim 13, wherein a third angle formed by the third surface and the upper surface is smaller than the first angle and the second angle.
The method of claim 17, wherein the third surface is parallel to the top surface.
The deposition mask is
A frame surrounding the opening;
The manufacturing method according to claim 13, further comprising a connection portion in contact with the metal plate and the frame.