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WO2018196835A1 - 一种磁电阻线性位置传感器 - Google Patents

一种磁电阻线性位置传感器 Download PDF

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Publication number
WO2018196835A1
WO2018196835A1 PCT/CN2018/084750 CN2018084750W WO2018196835A1 WO 2018196835 A1 WO2018196835 A1 WO 2018196835A1 CN 2018084750 W CN2018084750 W CN 2018084750W WO 2018196835 A1 WO2018196835 A1 WO 2018196835A1
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WO
WIPO (PCT)
Prior art keywords
magnetoresistive
chip
permanent magnet
sensor chip
linear position
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PCT/CN2018/084750
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English (en)
French (fr)
Inventor
刘明峰
薛松生
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江苏多维科技有限公司
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Publication of WO2018196835A1 publication Critical patent/WO2018196835A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/14—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/022—Measuring gradient
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Definitions

  • the invention belongs to the technical field of magnetic sensors, in particular to a magnetoresistive linear position sensor for detecting a linear position of a permanent magnet by a magnetoresistive sensing chip.
  • the position information to be measured is converted into a magnetic field that changes with the position by the permanent magnet, and the position information to be measured can be obtained by detecting the magnetic field by a Hall element or the like.
  • the magnetic field generated by the permanent magnet is very high and can be as high as several thousand Gauss. In this way, only a large number of Hall elements can be used.
  • AMR anisotropic magnetoresistance
  • GMR giant magnetoresistance
  • TMR Tunnel Magnetoresistance
  • the present invention provides a magnetoresistive linear position sensor.
  • a novel magnetoresistance linear position sensor comprising:
  • the magnetoresistive sensing chip comprising a magnetoresistive sensing element
  • one of the permanent magnet and the magnetoresistive sensor chip is fixedly disposed, and the other is movably disposed along a fixed motion path, the fixed motion path being a straight line;
  • the sensitive direction of the magnetoresistive sensor chip is a direction perpendicular to the fixed motion path
  • the magnetoresistive sensor chip is configured to sense a change of a magnetic field caused by a change in a relative position of the magnetoresistive sensor chip and the permanent magnet, and output a voltage signal that changes with a position, and convert the signal into a position by signal processing. information.
  • the magnetoresistive sensor chip is a TMR tunnel magnetoresistive sensor chip or a GMR giant magnetoresistive sensor chip.
  • the magnetization direction of the permanent magnet is a direction parallel to the z-axis
  • the sensitive direction of the magnetoresistive sensor chip is parallel to the x-axis or the y-axis in the xy plane.
  • the fixed motion path extends along the z-axis.
  • the magnetoresistive sensor chip is a gradient half-bridge magnetoresistive sensor chip, and the gradient half-bridge magnetoresistive sensor chip comprises two magnetoresistive sensing elements, and the two magnetoresistive sensing elements are symmetrically distributed in the Both sides of the magnetoresistive sensor chip.
  • the two magnetoresistive sensing elements are fabricated on a single chip by a semiconductor process, and the two magnetoresistive sensing elements are respectively movably disposed on the single chip to adjust the separation distance therebetween .
  • the magnetoresistive sensor chip is a gradient full-bridge magnetoresistive sensor chip, and the gradient full-bridge magnetoresistive sensor chip comprises four magnetoresistive sensing elements, and four magnetoresistive sensing elements are symmetrically distributed in the Both sides of the magnetoresistive sensor chip.
  • the four magnetoresistive sensing elements are fabricated on a single chip by a semiconductor process, and the magnetoresistive sensing elements are respectively movably disposed on the single chip to enable magnetoresistive sensing elements on both sides
  • the separation distance is adjustable.
  • the magnetoresistive linear position sensor further includes a fixing frame, one of the permanent magnet and the magnetoresistive sensing chip is fixedly disposed on the fixing frame, and the other can be fixed along the fixing frame
  • the moving path is movably disposed on the fixed frame.
  • the invention has the following beneficial effects:
  • the sensitive direction of the magnetoresistive sensing element is perpendicular to the direction of the fixed motion path such that it senses the magnetic field component of the magnetic field of the permanent magnet along a direction perpendicular to the fixed motion path, and the magnetic field component in a direction perpendicular to the fixed motion path Small, thus ensuring that the magnetoresistive sensor operates in an unsaturated zone, ensuring that it can work normally, overcoming space-limited close-range high-precision position measurement.
  • the magnetic field generated by the permanent magnet in the direction of the fixed motion path is too high and causes saturation. The problem.
  • the present invention has a magnetic field component of the X-axis and the Y-axis of the permanent magnet in the horizontal plane due to the in-plane X-axis and Y-axis directions of the sensitive axis, and the magnetic field components of the X-axis and the Y-axis in the horizontal plane are compared.
  • Small thus ensuring that the magnetoresistive sensor operates in an unsaturated region, ensuring that it can work normally, and overcoming the problem of saturation of the magnetic field Z component generated by the permanent magnet caused by the space-constrained close-range high-precision position measurement.
  • the invention adopts a gradient half bridge and a gradient full bridge design, has the ability to resist external magnetic field interference, and the work is more stable.
  • Figure 1 is a schematic view of a permanent magnet of a rectangular parallelepiped block structure
  • FIG. 2 is a magnetic line arrow diagram of a permanent magnet of a rectangular parallelepiped block structure on a XOZ cut surface
  • 3 is a graph showing the relationship between the z component Bz of the magnetic field generated on the four linear clusters at different X positions directly above the permanent magnet with the height z;
  • FIG. 4 is a graph showing the relationship between the magnetic field x component Bx and the height z of the four linear clusters of permanent magnets at different X positions directly above the permanent magnet;
  • Figure 5 is a schematic view of a magnetoresistive linear position sensor of the present invention.
  • Figure 6 (a) is a positional arrangement diagram of the gradient half-bridge magnetoresistive sensor chip
  • Figure 6 (b) is a schematic diagram of the electrical connection of the gradient half-bridge magnetoresistive sensor chip
  • Figure 7 (a) is a positional arrangement diagram of the gradient full bridge magnetoresistive sensor chip
  • Figure 7 (b) is a schematic diagram of electrical connections of a gradient full bridge magnetoresistive sensor chip.
  • the reference numerals are: 1- permanent magnet, 2-magnetoresistive sensor chip.
  • FIG. 1 is a schematic view of a permanent magnet of a rectangular parallelepiped block structure according to the present invention.
  • the magnetization direction of the permanent magnet is vertically downward.
  • the center point of the upper surface of the selected rectangular parallelepiped is the origin, as shown in FIG.
  • a spatial Cartesian coordinate system is created.
  • FIG. 2 is a magnetic line arrow diagram of a permanent magnet of a rectangular parallelepiped block structure on the XOZ cut surface.
  • the size of the permanent magnet is assumed to be 5 ⁇ 4 ⁇ 1 mm, and the material is the most commonly used N35 yttrium-iron rare earth permanent magnet material.
  • the magnetization direction of the permanent magnet is vertically downward.
  • the magnetic field lines are directed from the S pole of the upper surface to the N pole of the lower surface; outside the permanent magnet, the magnetic field lines are closed, and the N pole of the lower surface is outwardly bent and then returned to the upper surface.
  • the magnetic field line is vertically downwards directly above the permanent magnet; the magnetic lines on the left and right sides are symmetric about the YOZ plane of the center line of the permanent magnet; above the permanent magnet, the magnetic line on the left side is bent to the lower right back to the permanent magnet, right side The magnetic lines of force are deflected to the lower left to return to the permanent magnets.
  • the magnetic induction intensity z component Bz is symmetrically symmetrical around the permanent magnet
  • the magnetic induction intensity X component Bx is symmetrical, that is, equal in magnitude and opposite in direction.
  • the spatial symmetry of the permanent magnet the same property is present in the y-axis direction, so only the x-axis direction is analyzed below.
  • Fig. 3 is a graph showing the relationship between the z component Bz of the magnetic field generated by the permanent magnets on the four linear clusters at the different X positions directly above the permanent magnet as a function of the height z, as shown in Fig. 3, for different straight lines in the straight cluster, at X
  • the magnetic induction intensity z component Bz decreases with increasing height z, and reaches 800 Gs or more in the range of 0 to 1.5 mm, which far exceeds the current GMR/TMR magnetoresistive sensor.
  • the saturation field makes the GMR/TMR magnetoresistive sensor chip inoperable.
  • the Hall element having the z-axis sensitivity direction can be used to detect the z component of the magnetic field as a function of the height z, and the relative position of the permanent magnet with respect to the Hall element can be obtained by subsequent signal analysis processing. Since the noise level of the Hall element itself is relatively high, the resolution of the linear position detection is relatively low.
  • Fig. 4 is a graph showing the relationship between the magnetic field x component Bx and the height z of the four linear clusters of permanent magnets at different X positions directly above the permanent magnet, as shown in Fig. 4, where X is 0, 0.6, 1.2, 1.8.
  • the different straight lines in the straight line cluster at mm, the magnetic induction intensity x component Bx is always equal to zero for the straight line in the linear cluster, that is, for the vertical straight line passing through the positive center of the permanent magnet, the magnetic field lines generated by the permanent magnet are perpendicular to the upper surface of the permanent magnet Without the horizontal x component, the same y component is also zero.
  • the magnetoresistive sensing chip can be operated in the monotonically decreasing segment of Bx by the distance z between the magnetoresistive sensing chip and the permanent magnet and the distance x from the center of the permanent magnet.
  • FIG. 5 is a schematic diagram of a novel magnetoresistive linear position sensor including a permanent magnet 1, a magnetoresistive sensor chip 2, and a fixed frame necessary for practical application of the sensor (not shown). Out).
  • a relative motion occurs between the permanent magnet 1 and the magnetoresistive sensing chip 2, and the relative distance z changes.
  • the permanent magnet 1 can be fixedly disposed on the fixed frame according to different actual conditions, and the magnetoresistive sensor chip 2 can be disposed on the fixed frame by moving up and down;
  • the magnetoresistive sensor chip 2 is fixedly disposed on the fixed frame, and the permanent magnet 1 is disposed on the fixed frame by moving up and down.
  • one of the permanent magnet 1 and the magnetoresistive sensor chip 2 moves up and down along a fixed motion path which is a straight line extending along the z-axis, and the sensitive direction of the magnetoresistive sensor chip 2 is Vertical to the z-axis.
  • the permanent magnet 1 may have a different shape such as a rectangular parallelepiped, a cube, a thin cylinder or the like.
  • the magnetoresistive sensor chip may be a gradient half-bridge magnetoresistive sensor chip or a gradient full-bridge magnetoresistive sensor chip, and the gradient half-bridge magnetoresistive sensor chip and the gradient full-bridge magnetoresistive sensor chip are respectively taken as an example.
  • the magnetoresistive linear position sensor of the invention is described in detail.
  • the gradient half-bridge magnetoresistive sensor chip includes two magnetoresistive sensing elements fabricated on a single chip by a semiconductor process, and the sensing directions of the two magnetoresistive sensing elements are in the xy plane. In the horizontal x direction, the distance between the two magnetoresistive sensing elements is 1, symmetrically distributed on the left and right sides of the magnetoresistive sensor chip, and the two magnetoresistive sensing elements are also distributed in the y-axis direction near the x-axis.
  • the two magnetoresistive sensing elements are respectively movably disposed on the single chip to adjust the separation distance l therebetween.
  • the electrical connection of the two magnetoresistive sensing elements is shown in Figure 6(b).
  • the gradient half-bridge magnetoresistive chip is placed directly above the permanent magnet, as shown in Figure 5.
  • the two magnetoresistive sensing elements respectively sense the magnetic field Bx component of the permanent magnet generated in a direction opposite to the distance z, and output a voltage related to the distance z.
  • the two magnetoresistive sensing elements sense the same magnetic field and have no output.
  • the magnetic induction intensity x component Bx generated by the permanent magnet sensed by the magnetoresistive sensing chip can be changed by changing the distance l to adapt to different permanent magnet sizes.
  • the gradient full-bridge magnetoresistive sensor chip includes four magnetoresistive sensing elements fabricated on a single chip by a semiconductor process, and the sensing directions of the four magnetoresistive sensing elements are in the xy plane. In the horizontal x direction, the distance between the two magnetoresistive sensing elements on the left side and the two magnetoresistive sensing elements on the right side is l, symmetrically distributed on the left and right sides of the magnetoresistive sensing chip.
  • the two sensing elements are symmetrically distributed in the y-axis direction in the vicinity of the x-axis, and the magnetoresistive sensing elements are respectively movably disposed on the single chip to make the magnetoresistive sensing elements on both sides
  • the separation distance l is adjustable.
  • the electrical connection of the four magnetoresistive sensing elements is shown in Figure 7(b).
  • the gradient full-bridge magnetoresistive chip is placed directly above the permanent magnet, as shown in Figure 5.
  • the relative motion between the magnetoresistive sensing chip and the permanent magnet occurs, and the four magnetoresistive sensing elements R1/R3 and R2/R4 respectively sense the magnetic field Bx component of the direction of the permanent magnet generated by the distance z, and output The voltage associated with the distance z.
  • the magnetic fields induced by the four magnetoresistive sensing elements R1/R2/R3/R4 are the same, and there is no output.
  • the magnetic induction intensity x component Bx generated by the permanent magnet sensed by the magnetoresistive sensing chip can be changed by changing the distance l to adapt to different permanent magnet sizes.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

一种磁电阻线性位置传感器，包括永磁体(1)和磁阻传感芯片(2)；固定永磁体(1)或者磁阻传感芯片(2)的其中一个，永磁体(1)和磁阻传感芯片(2)沿固定运动路径进行相对运动；磁阻传感芯片(2)的敏感方向为沿垂直于固定运动路径的方向；磁阻传感芯片(2)感应到由于磁阻传感芯片(2)与永磁体(1)相对位置的变化而引起的磁场的变化，并输出随位置变化的电压信号，并通过信号处理转换为位置信息。

Description

一种磁电阻线性位置传感器 技术领域
本发明属于磁性传感器技术领域，具体地说是一种通过磁电阻传感芯片检测永磁体线性位置的磁电阻线性位置传感器。
背景技术
在实际的线性位置测量当中，通过永磁体将待测位置信息转换为随位置变化的磁场，再通过霍尔元件等检测该磁场就能够获得待测的位置信息。在实际的测试当中，对于受空间限制的近距离高精度位置测量场合，由于永磁体和磁敏元件的距离很近，永磁体产生的磁场大小非常高，可以高达数千高斯。这样，只能使用大量程的霍尔元件，由于霍尔元件本身的噪声水平比较高，使得线性位置检测的分辨率比较低；而各向异性磁阻(Anisotropic Magnetoresistance,AMR)、巨磁电阻(Giant Magnetoresistance,GMR)、隧道磁电阻(Tunnel Magnetorisistance,TMR)传感器由于其磁场动态范围相对比较小，AMR只能达到几个高斯到几十高斯，而GMR、TMR也只能达到几十到几百高斯，因而在实际工作中容易使磁阻传感芯片饱和而不能正常工作，限制了其在线性位置测量中的正常应用。
发明内容
针对以上问题，为了克服受空间限制的近距离高精度位置测量场合，永磁体产生的磁场过大使得磁阻传感芯片饱和而不能工作的问题，本发明提供了一种磁电阻线性位置传感器。
本发明是根据以下技术方案实现的：
一种新型磁电阻线性位置传感器，包括；
一永磁体；
一磁阻传感芯片，所述磁阻传感芯片包括磁阻传感元件；
其中所述永磁体和所述磁阻传感芯片二者中的其中一者固定设置，另一者可沿一固定运动路径移动地设置，所述固定运动路径是直线；
所述磁阻传感芯片的敏感方向为垂直于所述固定运动路径的方向；
所述磁阻传感芯片，用于感应由于所述磁阻传感芯片与所述永磁体相对位置的变化而引起的磁场的变化并输出随位置变化的电压信号，并通过信号处理转换为位置信息。
优选地，所述磁阻传感芯片是TMR隧道磁电阻传感芯片或者GMR巨磁电阻传感芯片。
优选地，所述永磁体的磁化方向为与z轴相平行的方向，所述磁阻传感芯片的敏感方向与xy平面内的x轴或y轴相平行的方向。
更优选地，所述固定运动路径沿z轴延伸。
优选地，所述磁阻传感芯片为梯度半桥磁阻传感芯片，所述梯度半桥磁阻传感芯片包括两个磁阻传感元件，两个磁阻传感元件对称分布于所述磁阻传感芯片的两侧。
优选地，所述两个磁阻传感元件通过半导体工艺制备在单一芯片上，所述两个磁阻传感元件分别可移动地设置在所述单一芯片上以使二者的间隔距离可调。
优选地，所述磁阻传感芯片为梯度全桥磁阻传感芯片，所述梯度全桥磁阻传感芯片包括四个磁阻传感元件，四个磁阻传感元件对称分布于所述磁阻 传感芯片的两侧。
优选地，所述四个磁阻传感元件通过半导体工艺制备在单一芯片上，所述磁阻传感元件分别可移动地设置在所述单一芯片上以使两侧的磁电阻传感元件的间隔距离可调。
优选地，该磁电阻线性位置传感器还包括一固定框架，所述永磁体和所述磁阻传感芯片二者中的其中一者固定设置于所述固定框架，另一者可沿所述固定运动路径移动地设置于所述固定框架。
本发明与现有技术相比，具有以下有益效果：
磁阻传感元件的敏感方向为垂直于固定运动路径的方向，使得其感受到永磁体的磁场沿垂直于固定运动路径的方向的磁场分量，而沿垂直于固定运动路径的方向的磁场分量较小，从而能够确保磁阻传感器工作在非饱和区，确保其能够正常工作，克服受空间限制的近距离高精度位置测量场合永磁体产生的磁场沿固定运动路径的方向的分量过高而导致饱和的问题。
具体地，本发明由于其敏感轴沿面内X轴和Y轴方向，使得其感受到永磁体的磁场沿水平面内X轴和Y轴的磁场分量，而水平面内X轴和Y轴的磁场分量较小，从而能够确保磁阻传感器工作在非饱和区，确保其能够正常工作，克服受空间限制的近距离高精度位置测量场合永磁体产生的磁场Z分量过高而导致饱和的问题。同时，本发明采用梯度半桥和梯度全桥设计，具有抗外磁场干扰能力，工作更加稳定。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描 述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它附图。
图1为长方体块状结构的永磁体示意图；
图2为长方体块状结构的永磁体在XOZ切面的磁力线箭头图；
图3为永磁体在永磁体的正上方不同X位置处四个直线簇上产生的磁场z分量Bz随高度z的变化关系曲线；
图4为永磁体在永磁体的正上方不同X位置处四个直线簇上产生的磁场x分量Bx随高度z的变化关系曲线；
图5为本发明的磁电阻线性位置传感器示意图；
图6(a)为梯度半桥磁阻传感芯片的位置布置图；
图6(b)为梯度半桥磁阻传感芯片的电气连接示意图；
图7(a)为梯度全桥磁阻传感芯片的位置布置图；
图7(b)为梯度全桥磁阻传感芯片的电气连接示意图。
其中，附图标记：1-永磁体，2-磁阻传感芯片。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。
图1为本发明的长方体块状结构的永磁体示意图，如图1所示，永磁体的磁化方向为垂直向下，为了描述方便，选定长方体的上表面中心点为原点，如图1中所示，建立空间直角坐标系。为了获得永磁体的空间磁场分布特征，我们通过有限元方法对永磁体进行静磁模型仿真分析。
图2为长方体块状结构的永磁体在XOZ切面的磁力线箭头图，如图2所示，假定永磁体的尺寸为5×4×1mm，材料为最常用的N35钕铁錋稀土永磁材料，永磁体的磁化方向为垂直向下。从图2中可以看出，在永磁体内部，磁力线由上表面的S极指向下表面的N极；在永磁体外部，磁力线闭合，由下表面的N极向外弯曲后回到上表面的S极；在永磁体正上方，磁力线垂直向下；左右两侧的磁力线关于永磁体的中心线的YOZ平面对称；在永磁体上方，左侧的磁力线向右下弯曲回到永磁体，右侧的磁力线向左下变曲回到永磁体。根据长方体块状结构永磁体磁力线的对称性，在永磁体上方，磁力线的磁感应强度z分量Bz左右偶对称，磁感应强度X分量Bx左右奇对称，即大小相等，方向相反。根据永磁体的空间对称性，在y轴方向，具有同样的性质,所以以下只对x轴方向进行分析。
图3为永磁体在永磁体的正上方不同X位置处四个直线簇上产生的磁场z分量Bz随高度z的变化关系曲线，如图3所示，对于直线簇中的不同直线，在X为0、0.6、1.2、1.8mm处，磁感应强度z分量Bz随高度z的增加而减小，并且在0～1.5mm范围内达到800Gs以上，这都远超过目前的GMR/TMR磁阻传感器的饱和场，使得GMR/TMR磁阻传感芯片不能工作。这时，可以采用具有z轴灵敏度方向的霍尔元件来检测随着高度z变化的磁场z分量，并通过后续的信号分析处理获得永磁体相对于霍尔元件的相对位置。由于霍尔元件本身的噪声水平比较高，使得线性位置检测的分辨率比较低。
图4为永磁体在永磁体的正上方不同X位置处四个直线簇上产生的磁场x分量Bx随高度z的变化关系曲线，如图4所示，在X为0、0.6、1.2、1.8mm处的直线簇中的不同直线，对于直线簇中x＝0的直线，磁感应强度x分量Bx 始终等于零，即对于过永磁体正中心的垂直直线，永磁体产生的磁力线垂直于永磁体上表面，而没有水平x分量，同理y分量也为零。对于直线簇中的其它直线，磁感应强度x分量Bx随高度z的增加先增大，然后持续减小。并且，对于x越大的直线，例如x＝1.2,1.8mm，其开始减小的距离z明显小于x＝0.6。同时从图中可以看出，对于x＝1.8mm的直线，磁感应强度x分量Bx的最大值为1000Gs；x＝1.2mm的直线最大值为450Gs；x＝0.6mm的直线最大值为200Gs，并且在峰值之后，随着距离的增大而持续减小。由于磁感应强度x分量Bx的值减小到500Gs以下，并且可以通过直线离永磁体中心的距离x进行调节，从而能够确保GMR/TMR磁阻传感芯片不会饱和。这样，就能够采用灵敏度方向沿面内方向的磁阻传感器对永磁体产生的磁场x分量进行检测，然后通过信号处理获得磁阻传感芯片与永磁体之间的距离。为了简化测量和数据处理的过程，可以通过对磁阻传感芯片与永磁体的距离z和直线距永磁体中心的距离x，使磁阻传感芯片工作在Bx的单调下降段。
如图5所示为本发明的新型磁电阻线性位置传感器示意图，该磁阻线性位置传感器包括一永磁体1、一磁阻传感芯片2、以及在传感器实际应用中必要的固定框架(未示出)。在磁阻传感器工作时，永磁体1和磁阻传感芯片2之间产生相对运动，其相对距离z发生变化。具体的，在该磁电阻线性位置传感器工作时，根据不同的实际情况，可以将永磁体1固定设置在固定框架上，磁阻传感芯片2可进行上下运动地设置在固定框架上；也可以将磁阻传感芯片2固定设置在固定框架上，永磁体1可进行上下运动地设置在固定框架上。换句话说，永磁体1和磁阻传感芯片2中的一个沿一固定运动路径相对另一个上下运动，该固定运动路径为沿z轴延伸的直线，磁阻传感芯片2 的敏感方向则垂直于z轴。所述永磁体1可以是长方体、立方体，薄圆柱体等不同的形状。所述磁阻传感芯片可以是梯度半桥磁阻传感芯片或梯度全桥磁阻传感芯片，下面分别以梯度半桥磁阻传感芯片和梯度全桥磁阻传感芯片为实例对本发明的磁电阻线性位置传感器作详细描述。
图6(a)和图6(b)分别为梯度半桥磁阻传感芯片的位置布置图和电气连接示意图。如图6(a)所示，梯度半桥磁阻传感芯片包括通过半导体工艺制备在单一芯片上的2个磁阻传感元件，两个磁阻传感元件的敏感方向为沿xy平面内的水平x方向，两个磁阻传感元件之间的距离为l，对称分布在磁阻传感芯片的左右两侧，同时两个磁阻传感元件在y轴方向也分布在靠近x轴的附近，所述两个磁阻传感元件分别可移动地设置在所述单一芯片上以使二者的间隔距离l可调。两个磁阻传感元件的电气连接如图6(b)所示。工作时，梯度半桥磁阻芯片正对放置于永磁体的正上方，如图5所示。工作时，磁阻传感芯片与永磁体之间发生相对运动，两个磁阻传感元件分别感受永磁体产生的方向相反随距离z变化的磁场Bx分量，并输出与距离z相关的电压。而对于外部沿水平x方向的共模干扰磁场，两个磁阻传感元件感应的磁场相同，没有输出。在实际的传感器设计中，可以通过改变距离l改变磁阻传感芯片感受到的永磁体所产生的磁感应强度x分量Bx，以适应不同的永磁体大小。
图7(a)和图7(b)为梯度全桥磁阻传感芯片的位置布置图和电气连接示意图。如图7(a)所示，梯度全桥磁阻传感芯片包括通过半导体工艺制备在单一芯片上的4个磁阻传感元件，四个磁阻传感元件的敏感方向为沿xy平面内水平x方向，左侧两个磁阻传感元件与右侧两个磁阻传感元件之间的距 离为l，对称分布在磁阻传感芯片的左右两侧。同时左右各两个传感元件在y轴方向对称分布在靠近x轴的附近，所述磁阻传感元件分别可移动地设置在所述单一芯片上以使两侧的磁电阻传感元件的间隔距离l可调。四个磁阻传感元件的电气连接如图7(b)所示。工作时，梯度全桥磁阻芯片正对放置于永磁体的正上方，如图5所示。工作时，磁阻传感芯片与永磁体之间发生相对运动，四个磁阻传感元件R1/R3与R2/R4分别感受永磁体产生的方向相反随距离z变化的磁场Bx分量，并输出与距离z相关的电压。而对于外部沿水平x方向的共模干扰磁场，四个磁阻传感元件R1/R2/R3/R4感应的磁场相同，没有输出。在实际的传感器设计中，可以通过改变距离l改变磁阻传感芯片感受到的永磁体所产生的磁感应强度x分量Bx，以适应不同的永磁体大小。
基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。尽管本发明就优选实施方式进行了示意和描述，但本领域的技术人员应当理解，只要不超出本发明的权利要求所限定的范围，可以对本发明进行各种变化和修改。

Claims (9)

  1. 一种磁电阻线性位置传感器，其特征在于，包括：
    一永磁体；
    一磁阻传感芯片，所述磁阻传感芯片包括磁阻传感元件；
    其中所述永磁体和所述磁阻传感芯片二者中的其中一者固定设置，另一者可沿一固定运动路径移动地设置，所述固定运动路径是直线；
    所述磁阻传感元件的敏感方向为垂直于所述固定运动路径的方向；
    所述磁阻传感芯片，用于感应由于所述磁阻传感芯片与所述永磁体相对位置的变化而引起的磁场的变化并输出随位置变化的电压信号，并通过信号处理转换为位置信息。
  2. 根据权利要求1所述的一种磁电阻线性位置传感器，其特征在于：所述磁阻传感芯片是TMR隧道磁电阻传感芯片或者GMR巨磁电阻传感芯片。
  3. 根据权利要求1所述的一种磁电阻线性位置传感器，其特征在于：所述永磁体的磁化方向为与z轴相平行的方向，所述磁阻传感芯片的敏感方向与xy平面内的x轴或y轴相平行的方向。
  4. 根据权利要求3所述的一种磁电阻线性位置传感器，其特征在于：所述固定运动路径沿z轴延伸。
  5. 根据权利要求1至3任一项所述的一种磁电阻线性位置传感器，其特征在于：所述磁阻传感芯片为梯度半桥磁阻传感芯片，所述梯度半桥磁阻传感芯片包括两个磁阻传感元件，两个磁阻传感元件对称分布于所述磁阻传感芯片的两侧。
  6. 根据权利要求5所述的一种磁电阻线性位置传感器，其特征在于：所述两个磁阻传感元件通过半导体工艺制备在单一芯片上，所述两个磁阻传感元件分别可移动地设置在所述单一芯片上以使二者的间隔距离可调。
  7. 根据权利要求1至3任一项所述的一种磁电阻线性位置传感器，其特征在于：所述磁阻传感芯片为梯度全桥磁阻传感芯片，所述梯度全桥磁阻传感芯片包括四个磁阻传感元件，四个磁阻传感元件对称分布于所述磁阻传感芯片的两侧。
  8. 根据权利要求7所述的一种磁电阻线性位置传感器，其特征在于：所述梯四个磁阻传感元件通过半导体工艺制备在单一芯片上，所述磁阻传感元件分别可移动地设置在所述单一芯片上以使两侧的磁电阻传感元件的间隔距离可调。
  9. 根据权利要求1所述的一种磁电阻线性位置传感器，其特征在于：该磁电阻线性位置传感器还包括一固定框架，所述永磁体和所述磁阻传感芯片二者中的其中一者固定设置于所述固定框架，另一者可沿所述固定运动路径移动地设置于所述固定框架。
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