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WO2018184330A1 - 一种显示面板和显示装置 - Google Patents

一种显示面板和显示装置 Download PDF

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Publication number
WO2018184330A1
WO2018184330A1 PCT/CN2017/096716 CN2017096716W WO2018184330A1 WO 2018184330 A1 WO2018184330 A1 WO 2018184330A1 CN 2017096716 W CN2017096716 W CN 2017096716W WO 2018184330 A1 WO2018184330 A1 WO 2018184330A1
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Prior art keywords
layer
disposed
substrate
source
drain
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Application number
PCT/CN2017/096716
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English (en)
French (fr)
Inventor
卓恩宗
Original Assignee
惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US16/500,543 priority Critical patent/US20200091266A1/en
Publication of WO2018184330A1 publication Critical patent/WO2018184330A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present application relates to the field of display technologies, and in particular, to a display panel and a display device.
  • AMOLED Active-matrix organic light emitting diode
  • the AMOLED display is mainly controlled by a specific TFT to adjust the switching and brightness of the OLED device, and the screen display is performed after adjusting the ratio of the three primary colors.
  • the control TFT often uses a metal oxide semiconductor, which not only has a high on-state current and a low off-state current, but also has a high uniformity and high stability.
  • the technical problem to be solved by the present application is to provide a display panel that prevents damage to an OLED device and improves display life and effects.
  • a display panel comprising:
  • Active switch disposed on the substrate
  • a color photoresist layer disposed on the substrate
  • a passivation layer is disposed on the substrate, and the passivation layer covers the active switch and the color photoresist layer.
  • the substrate is covered with a buffer layer, an interlayer dielectric layer is disposed between the buffer layer and the passivation layer, and the color photoresist is disposed on the interlayer dielectric layer, the colored light
  • the resist layer is spaced apart from the active switch.
  • the active switch can play a very good role in shading, effectively alleviating the uneven display or color mixing, so that the display panel has a better display effect, and the color photoresist layer and the active switch can be set very well.
  • the definition of the display panel's pixels allows for better control and adjustment of the display panel's display.
  • the passivation layer is provided with a flat layer and a light emitting layer
  • the flat layer is disposed between the passivation layer and the light emitting layer
  • the light emitting layer is provided with a white organic light emitting diode
  • the white An organic light emitting diode is disposed corresponding to the color photoresist layer.
  • the orthographic projection area of the white organic light emitting diode on the substrate is larger than the orthographic projection area of the color photoresist layer on the substrate, and the orthographic projection of the white organic light emitting diode on the substrate can completely cover the orthographic projection of the color photoresist layer on the substrate.
  • the light emitted by the white organic light emitting diode can pass through the color photoresist layer very well, so that the display effect of the display panel can be improved very well.
  • the active switch includes a semiconductor layer, a source, and a drain.
  • the source and the drain are respectively connected to two ends of the semiconductor layer, and the semiconductor layer is disposed on the buffer layer and the interlayer medium. Between the layers, one end of the source and the drain are disposed between the passivation layer and the interlayer dielectric layer, and the other ends of the source and the drain pass through the layer An intermediate dielectric layer is coupled to the semiconductor layer.
  • the active switch includes a gate, the gate is disposed in the interlayer dielectric layer, and a gate insulating layer is disposed between the gate and the semiconductor layer.
  • the semiconductor layer is an indium gallium zinc oxide thin film layer.
  • the power consumption of the display panel can be effectively reduced, thereby saving power and saving environmental protection, and the carrier mobility is 20 to 30 of amorphous silicon.
  • Double can greatly improve the charge and discharge rate of the active switch to the pixel electrode, improve the response speed of the pixel, achieve a faster refresh rate, and at the same time, the faster response also greatly improves the line scan rate of the pixel, so that the resolution can reach full HD Even the level of ultra high definition.
  • the light shielding layer is disposed on the substrate, and the light shielding layer is disposed on the buffer layer and the substrate
  • the source is connected to the light shielding layer through the buffer layer.
  • the light shielding layer is disposed between the source and the drain between the orthographic projections of the substrate, and the light shielding layer fills the source and the drain on the substrate in the substrate The gap between the orthographic projections.
  • the light of the light-emitting layer is irradiated onto the source and the drain, the source and the drain effectively block the light, and the light of the light-emitting layer is irradiated to the position between the source and the drain, and the gate can be excellent at first.
  • the light is blocked, and the opaque layer is not occluded to the light shielding layer, and the light shielding layer is spaced between the substrate filling source and the drain between the orthographic projection of the substrate, which can effectively block the light of the luminescent layer and effectively prevent
  • the light of the illuminating layer leaks light in the active switch, effectively alleviating uneven display or color mixing, so that the display panel has a better display effect, thereby further improving the display effect of the display panel.
  • the passivation layer is provided in two layers, the passivation layer is disposed between the flat layer and the interlayer dielectric layer, and the color photoresist layer is disposed between the two passivation layers.
  • the source and the drain are made of a metal material, and the sides of the source and the drain have metal burrs from the viewpoint of the microstructure.
  • the metal burr on the cover is very effective to prevent the metal burr from being exposed outside the protective layer, so that the protective layer can better protect the source and the drain, and effectively avoid the influence of the subsequent process on the source and the drain.
  • the yield of the display panel is very good, and the color photoresist layer is disposed between the two passivation layers, which can protect the color photoresist layer very well, effectively preventing the subsequent process from making the color photoresist layer.
  • the organic material releases some harmful impurity gas, thereby achieving effective protection of the display panel, increasing its efficiency and life.
  • the present application also discloses a display device including the display panel as described above.
  • the present application covers the active switch and the color photoresist layer by covering the passivation layer, the problem of gas overflow of the color photoresist layer in the subsequent process can be effectively prevented, so that the passivation layer can be It is often very good to protect the color photoresist layer, thus ensuring the life and efficiency of the display panel, without the need to increase the process steps, nor the need to change the current mask style, just change the process mask sequence, The effective protection of the display panel can be realized, so that the display panel has a better display effect, thereby further improving the display effect of the display panel.
  • FIG. 1 is a schematic cross-sectional view of a display panel designed by the inventor of the embodiment of the present application;
  • FIG. 2 is a cross-sectional view of a display panel according to another embodiment of the present application.
  • FIG. 3 is a schematic cross-sectional view of a display panel according to another embodiment of the present application.
  • FIG. 4 is a cross-sectional view of a display panel according to another embodiment of the present application.
  • FIG. 5 is a cross-sectional view of a display panel according to another embodiment of the present application.
  • FIG. 6 is a cross-sectional view of a display panel according to another embodiment of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • a plurality means two or more unless otherwise stated.
  • the term “comprising” and any variants thereof are intended to cover no His inclusion.
  • connection In the description of the present application, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise specifically defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • Connected, or integrally connected can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components.
  • the specific meanings of the above terms in the present application can be understood on a case-by-case basis.
  • the display panel includes a substrate 1, an active switch 2, and a color photoresist layer 17.
  • the substrate 1 is covered with a buffer layer 12 and a passivation layer 14 for buffering.
  • An interlayer dielectric layer 13 is disposed between the layer 12 and the passivation layer 14.
  • a light shielding layer 11 is disposed between the buffer layer 12 and the substrate 1.
  • the color photoresist layer 17 is disposed on the upper surface of the passivation layer 14, and the active switch 2 is disposed.
  • the color photoresist layer 17 is further covered with a flat layer 15 and a light-emitting layer 16, and the light-emitting layer 16 includes a white organic light-emitting diode 161 (WOLED);
  • WOLED white organic light-emitting diode
  • a display method of the color photoresist layer 17 and the white organic light emitting diode 161 is generally employed. Applying the passivation layer 14 after the active switch 2 process is completed by using the conventional COA technology, the active switch 2 is protected, and then the color photoresist layer 17 of the display panel is coated (ie, the RGB process).
  • the subsequent processes of the RGB process such as the coating of the flat layer 15 and the setting of the light-emitting layer 16, etc.
  • the subsequent process operations are very complicated, and it is very easy to damage the structure of the RGB process. And can not effectively protect the display panel.
  • the color photoresist layer 17 in the RGB process is mainly organic. After the completion of the RGB process, there are more complicated processes. The subsequent processes often cause the organic materials to continue to release some harmful impurity gases, which causes the display panel to be damaged, thereby affecting the display life and effects. Therefore, the applicant provides a new technical solution, which can effectively prevent the display panel from being damaged, and the display panel with improved display life and effect.
  • the display panel includes: a substrate 1, an active switch 2, and a color photoresist layer 17; a substrate 1 is covered with a passivation layer 14 covering the active switch 2 and the color photoresist layer 17 on.
  • the passivation layer 14 on the active switch 2 and the color photoresist layer 17 By covering the passivation layer 14 on the active switch 2 and the color photoresist layer 17, the problem of gas overflow of the color photoresist layer 17 in the subsequent process can be effectively prevented, so that the passivation layer 14 can be very good.
  • the color resist layer 17 is very well protected, thereby ensuring the life and efficiency of the display panel, without the need to increase the process steps, nor the need to change the current mask pattern, only need to change the process mask order, ie
  • the effective protection of the display panel can be realized, so that the display panel has a better display effect, thereby further improving the display effect of the display panel.
  • the substrate 1 is covered with a buffer layer 12, an interlayer dielectric layer 13 is disposed between the buffer layer 12 and the passivation layer 14, a color photoresist is disposed on the interlayer dielectric layer 13, and the color photoresist layer 17 is spaced apart from the active switch 2.
  • the active switch 2 can be very well-shielded, effectively alleviating display unevenness or color mixing, so that the display panel has a better display effect, and the color photoresist layer 17 is spaced from the active switch 2. It is very good to define the pixels of the display panel to better control and adjust the display of the display panel.
  • the passivation layer 14 is provided with a flat layer 15 and a light-emitting layer 16, and the flat layer 15 is disposed between the passivation layer 14 and the light-emitting layer 16.
  • the transparent surface of the light-emitting layer 16 is provided with a transparent anode 18, that is, transparent.
  • the anode 18 is disposed between the light-emitting layer 16 and the flat layer 15.
  • the transparent anode has a plurality of materials to be selected, for example, a transparent conductive material such as a graphene composite material or an indium tin oxide (ITO) can be used to emit light.
  • the upper surface of the layer 16 is provided with a metal cathode 19; the light-emitting layer 16 is provided with a white organic light-emitting diode 161, the white organic light-emitting diode 161 is disposed corresponding to the color photoresist layer 17, and the orthographic projection area of the white organic light-emitting diode 161 on the substrate 1 Greater than the orthographic area of the color resist layer 17 on the substrate 1, and white
  • the orthographic projection of the color organic light emitting diode 161 on the substrate 1 can completely cover the orthographic projection of the color photoresist layer 17 on the substrate 1, so that the light emitted by the white organic light emitting diode 161 can pass through the color photoresist layer 17 very well, thereby It can improve the display effect of the display panel very well.
  • the active switch 2 includes a semiconductor layer 24, a source 22, and a drain 23.
  • the source 22 and the drain 23 are respectively connected at two ends of the semiconductor layer 24.
  • the semiconductor layer 24 is disposed between the buffer layer 12 and the interlayer dielectric layer 13.
  • One end of the source 22 and the drain 23 are disposed between the passivation layer 14 and the interlayer dielectric layer 13, and the other ends of the source 22 and the drain 23 are connected to the semiconductor layer 24 through the interlayer dielectric layer 13;
  • the switch 2 further includes a gate 21, the gate 21 is disposed in the interlayer dielectric layer 13, a gate 21 insulating layer 25 is disposed between the gate 21 and the semiconductor layer 24, and the gate 21 is disposed at the source 22 and the drain 23 The position between them can also play a good shading effect.
  • the semiconductor layer 24 is an oxide thin film layer, and the oxide thin film layer may be made of ZnO, Zn-Sn-O, In-Zn-O, MgZnO, In-Ga-O, In2O3, etc., and these materials may be prepared by using magnetic materials. Controlled sputtering, pulsed laser deposition, electron beam evaporation and other methods are prepared. Compared with the conventional amorphous silicon, the carrier mobility is low and the photosensitivity is strong.
  • the oxide thin film layer has a high current carrying capacity.
  • active switch 2 with oxide film layer has higher switching current ratio and higher field
  • the effect mobility, fast response, large drive current, large-area display panel can be prepared, and the active switch 2 with oxide film layer can be prepared at room temperature, and the flexible substrate can be used at low preparation temperature.
  • the appearance of flexible display, flexible display technology is more portable, lighter, more resistant to falling, etc., and the use of oxide semiconductors is very suitable for flexible display semiconductor materials.
  • the oxide thin film layer adopts an indium gallium zinc oxide thin film layer, and the indium gallium zinc oxide thin film layer is disposed, which can effectively reduce the power consumption of the display panel, thereby saving power and saving environmental protection.
  • its carrier mobility is 20 to 30 times that of amorphous silicon, which can greatly improve the charge and discharge rate of the active switch 2 to the pixel electrode, improve the response speed of the pixel, achieve faster refresh rate, and faster response.
  • the pixel scanning rate is greatly improved, so that the resolution can reach full HD (Ultra HD) or even Ultra Definition level; in addition, due to the number of transistors minus Less and improve the light transmittance of each pixel, so that the display panel has a higher energy efficiency level, and the efficiency is higher; at the same time, the production of the amorphous silicon production line requires only a slight modification, so the cost is lower than the low temperature polysilicon. competitive.
  • the light shielding layer 11 is disposed on the substrate 1 , and the light shielding layer 11 is disposed to shield the light of the light emitting layer 16 very well, thereby effectively preventing the display panel from leaking light, so that the display panel has better display effect; the light shielding layer 11 is disposed at the source.
  • the 22 and the drain 23 are between the orthographic projections of the substrate 1, and the light shielding layer 11 fills the gap between the source 22 and the drain 23 at the orthographic projection of the substrate 1 in the substrate 1, and the light of the light-emitting layer 16 is irradiated to the source On the 22 and the drain 23, the source 22 and the drain 23 effectively block the light, and the light of the light-emitting layer 16 is irradiated to the position between the source 22 and the drain 23, firstly, the gate 21 can perfectly align the light. The occlusion is performed, and the opaque layer is irradiated to the light shielding layer 11.
  • the light shielding layer 11 fills the gap between the source 22 and the drain 23 in the orthographic projection of the substrate 1 in the substrate 1, and the light of the luminescent layer 16 can be very effectively performed.
  • the occlusion effectively prevents the light of the illuminating layer 16 from leaking light in the active switch 2, effectively alleviating uneven display or color mixing, so that the display panel has a better display effect, thereby further improving the display effect of the display panel.
  • the light shielding layer 11 may not be disposed at the orthographic projection of the gate electrode 21 on the substrate 1. This can effectively save consumables, can greatly reduce the production cost of the display panel, and can effectively reduce the quality of the display panel, so that the display The panel is more convenient to move.
  • the display panel disclosed in the embodiment shown in FIG. 4 includes: a substrate 1, an active switch 2, and a color photoresist layer 17; the substrate 1 is covered with a passivation layer 14 covering the active switch 2 and the colored light On the resist layer 17.
  • a passivation layer 14 covering the active switch 2 and the color photoresist layer 17
  • the problem of gas overflow of the color photoresist layer 17 in the subsequent process can be effectively prevented, so that the passivation layer 14 can be very good.
  • the color resist layer 17 is very well protected, thereby ensuring the life and efficiency of the display panel, without the need to increase the process steps, nor the need to change the current mask pattern, only need to change the process mask order, ie Effective protection of the display panel is achieved.
  • the substrate 1 is covered with a buffer layer 12, an interlayer dielectric layer 13 is disposed between the buffer layer 12 and the passivation layer 14, a color photoresist is disposed on the interlayer dielectric layer 13, and the color photoresist layer 17 is spaced apart from the active switch 2.
  • the active switch 2 can function as a good shading function, effectively alleviating display unevenness or color mixing, so that the display panel has a better display effect, and the color photoresist layer 17 and the active switch 2 can be set very apart.
  • a good definition of the pixels of the display panel so as to better control and adjust the display of the display panel.
  • the light shielding layer 11 is disposed on the substrate 1 , and the light shielding layer 11 is disposed to shield the light of the light emitting layer 16 very well, thereby effectively preventing the display panel from leaking light, so that the display panel has better display effect; the light shielding layer 11 is disposed on the buffer layer. Between the substrate 12 and the substrate 1 , the source 22 is connected to the light shielding layer 11 through the buffer layer 12 , which can effectively block the light of the light-emitting layer 16 , thereby effectively preventing the light of the light-emitting layer 16 from leaking light in the active switch 2 . , effectively alleviating the uneven display or color mixing phenomenon, so that the display panel has a better display effect, thereby further improving the display effect of the display panel.
  • the light shielding layer 11 is disposed between the source 22 and the drain 23 between the orthographic projections of the substrate 1 , and the light shielding layer 11 fills the space between the source 22 and the drain 23 of the substrate 1 between the orthographic projections of the substrate 1 , and the light emitting layer
  • the light of 16 is irradiated onto the source 22 and the drain 23, the source 22 and the drain 23 effectively block the light, and the light of the light-emitting layer 16 is irradiated to the position between the source 22 and the drain 23, first the gate 21 can block the light well, and the opaque layer is not occluded to the light shielding layer 11.
  • the light shielding layer 11 can be very effective in filling the gap between the source 22 and the drain 23 of the substrate 1 between the orthographic projections of the substrate 1.
  • the light of the illuminating layer 16 is shielded, which effectively prevents the light of the illuminating layer 16 from leaking light in the active switch 2, effectively alleviating uneven display or color mixing, so that the display panel has a better display effect, thereby further
  • the display effect of the display panel is improved; of course, the light shielding layer 11 may not be disposed at the orthographic projection of the gate electrode 21 on the substrate 1, which can effectively save consumables, can greatly reduce the production cost of the display panel, and can Effective Low quality of the display panel, so that the display panel is more easy to move.
  • the passivation layer 14 is provided with a flat layer 15 and a light-emitting layer 16.
  • the flat layer 15 is disposed between the passivation layer 14 and the light-emitting layer 16.
  • the lower surface of the light-emitting layer 16 is provided with a transparent anode 18, that is, transparent.
  • the anode 18 is disposed between the light-emitting layer 16 and the flat layer 15.
  • the upper surface of the light-emitting layer 16 is provided with a metal cathode 19; the light-emitting layer 16 is provided with a white organic light-emitting diode 161, and the white organic light-emitting diode 161 and the color photoresist layer 17 are disposed.
  • the orthographic projection area of the white organic light emitting diode 161 on the substrate 1 is larger than the orthographic projection area of the color photoresist layer 17 on the substrate 1, and the orthographic projection of the white organic light emitting diode 161 on the substrate 1 can completely cover the color photoresist.
  • the orthographic projection of the layer 17 on the substrate 1 allows the light emitted by the white organic light emitting diode 161 to pass through the color resist layer 17 very well, so that the display effect of the display panel can be improved very well.
  • the active switch 2 includes a semiconductor layer 24, a source 22, and a drain 23.
  • the source 22 and the drain 23 are respectively connected at two ends of the semiconductor layer 24.
  • the semiconductor layer 24 is disposed between the buffer layer 12 and the interlayer dielectric layer 13.
  • One end of the source 22 and the drain 23 are disposed between the passivation layer 14 and the interlayer dielectric layer 13, and the other ends of the source 22 and the drain 23 are connected to the semiconductor layer 24 through the interlayer dielectric layer 13;
  • the switch 2 further includes a gate electrode 21, the gate electrode 21 is disposed in the interlayer dielectric layer 13, a gate insulating layer 25 is disposed between the gate electrode 21 and the semiconductor layer 24, and the gate electrode 21 is disposed at the source electrode 22 and the drain electrode 23. The position between them can also play a good shading effect.
  • the semiconductor layer 24 is an oxide thin film layer, and the oxide thin film layer may be made of ZnO, Zn-Sn-O, In-Zn-O, MgZnO, In-Ga-O, In2O3, etc., and these materials may be prepared by using magnetic materials. Controlled sputtering, pulsed laser deposition, electron beam evaporation and other methods are prepared. Compared with the conventional amorphous silicon, the carrier mobility is low and the photosensitivity is strong.
  • the oxide thin film layer has a high current carrying capacity.
  • active switch 2 with oxide film layer has higher switching current ratio and higher field effect Mobility, fast response, large drive current, large-area display panel can be prepared; active switch 2 with oxide film layer can be prepared at room temperature, and flexible substrate can be used at low preparation temperature. This leads to the emergence of flexible displays, which are more portable, lighter, more resistant to falling, etc., while oxide semiconductors are the most suitable semiconductor materials for flexible displays.
  • the oxide thin film layer adopts an indium gallium zinc oxide thin film layer, and the indium gallium zinc oxide thin film layer is disposed, which can effectively reduce the power consumption of the display panel, thereby saving power and saving environmental protection.
  • its carrier mobility is 20 to 30 times that of amorphous silicon, which can greatly improve the charge and discharge rate of the active switch 2 to the pixel electrode, improve the response speed of the pixel, achieve faster refresh rate, and faster response.
  • the display panel has a higher energy efficiency level and higher efficiency; at the same time, using amorphous silicon production line production, only a little Adding changes, so it is more competitive in terms of cost than low temperature polysilicon.
  • the passivation layer 14 is modified. Two layers of the passivation layer 14 are provided. The passivation layer 14 is disposed between the planar layer 15 and the interlayer dielectric layer 13, and the color photoresist layer 17 is disposed. Between the two passivation layers 14, the source 22 and the drain 23 are made of a metal material, and the sides of the source 22 and the drain 23 have metal burrs from the microstructure, by providing two layers of passivation. The layer 14 can better cover the metal burrs on the source 22 and the drain 23, and is very effective for preventing the metal burrs from being exposed outside the protective layer, so that the protective layer can better perform the source 22 and the drain 23.
  • the protection effectively avoids the influence of the subsequent process on the source 22 and the drain 23, thereby greatly improving the yield of the display panel; and the color photoresist layer 17 is disposed between the two passivation layers 14, which can be very
  • the color resist layer 17 is well protected, and the subsequent process is effectively prevented to release some harmful impurity gases from the organic material of the color resist layer 17, thereby realizing effective protection of the display panel and increasing its efficiency and life.
  • the present application further discloses a display device, which includes the above display panel.
  • the specific structure and connection relationship of the display panel can be seen in FIG. 1 to FIG. Said.

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Abstract

提供一种显示面板，包括：基板（1）；主动开关（2），设置在基板上；彩色光阻层（17），设置在基板上；基板上覆盖设置有钝化层（14），钝化层覆盖于主动开关和彩色光阻层上。

Description

一种显示面板和显示装置 【技术领域】
本申请涉及显示技术领域，尤其涉及一种显示面板和显示装置。
【背景技术】
主动矩阵有机发光二极体(Active-matrix organic light emitting diode，AMOLED)显示屏具有高对比度、广色域、响应速度快等特点。由于AMOLED具自发光的特色，不需使用背光板，因此比AMLCD更能够做得更轻薄甚至柔性。AMOLED显示屏的主要通过特定的TFT进行控制调节OLED器件的开关和亮度，在调节三原色的比例之后进行画面显示。其中，控制TFT往往采用金属氧化物半导体，其不仅有较高的开态电流和较低的关态电流，还有均匀性和稳定性较高的特点。
在彩色光阻设置在阵列基板(Color Filter On Array，COA)的面板技术中，完成RGB制程后还有较为复杂的制程，后续的制程往往会对RGB有机材料造成影响，导致OLED器件受到破坏，进而影响显示寿命和效果。
【发明内容】
本申请所要解决的技术问题是提供一种防止OLED器件受到破坏，提高显示寿命和效果的显示面板。
本申请的目的是通过以下技术方案来实现的：
一种显示面板，所述显示面板包括：
基板；
主动开关，设置在基板上；
彩色光阻层，设置在基板上；
所述基板上覆盖设置有钝化层，所述钝化层覆盖于所述主动开关和所述彩色光阻层上。
其中，所述基板上覆盖设置有缓冲层，所述缓冲层与所述钝化层之间设有层间介质层，所述彩色光阻设在所述层间介质层上，所述彩色光阻层与所述主动开关间隔设置。这样，主动开关能够非常好的起到遮光的作用，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，而且将彩色光阻层与主动开关间隔设置能够非常好的定义显示面板的像素，从而更好的控制和调节显示面板的显示效果。
其中，所述钝化层上设有平坦层和发光层，所述平坦层设在所述钝化层与所述发光层之间，所述发光层上设有白色有机发光二极管，所述白色有机发光二极管与所述彩色光阻层相对应设置。这样，白色有机发光二极管在基板上的正投影面积大于彩色光阻层在基板上的正投影面积，而且白色有机发光二极管在基板上的正投影能够完全覆盖彩色光阻层在基板上的正投影，使得白色有机发光二极管发射的光线能够非常好的穿过彩色光阻层，从而可以非常好的提高显示面板的显示效果。
其中，所述主动开关包括半导体层、源极、漏极，所述源极和所述漏极分别连接在半导体层的两端，所述半导体层设在所述缓冲层与所述层间介质层之间，所述源极和所述漏极的一端均设在所述钝化层和所述层间介质层之间，所述源极和所述漏极的另一端穿过所述层间介质层与所述半导体层相连接。
其中，所述主动开关包括栅极，所述栅极设在所述层间介质层内，所述栅极和所述半导体层之间设有栅极绝缘层。
其中，所述半导体层为铟镓锌氧化物薄膜层。这样，通过铟镓锌氧化物薄膜层的设置，能够非常有效的降低显示面板的功耗，从而更好的节省电能，非常的节约环保；而且其载流子迁移率是非晶硅的20至30倍，可以大大提高主动开关对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率，同时更快的响应也大大提高了像素的行扫描速率，使得分辨率可以达到全高清乃至超高清级别程度。
其中，所述基板上设置有遮光层，所述遮光层设在所述缓冲层与所述基板 之间，所述源极穿过所述缓冲层与所述遮光层相连接。这样，能够非常有效的对发光层的光线进行遮挡，有效的防止了发光层的光线在主动开关出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果
其中，所述遮光层设在所述源极和所述漏极在所述基板的正投影之间，且所述遮光层在所述基板填充所述源极和所述漏极在所述基板的正投影之间的间隔空隙。这样，发光层的光线照射到源极和漏极上，源极和漏极对光线进行有效的遮挡，发光层的光线照射到源极和漏极之间的位置，首先栅极能够很好的对光线进行遮挡，没有被遮挡的照射到遮光层，遮光层在基板填充源极和漏极在基板的正投影之间的间隔空隙，能够非常有效的对发光层的光线进行遮挡，有效的防止了发光层的光线在主动开关出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果
其中，所述钝化层两层，所述钝化层设在所述平坦层和所述层间介质层之间，所述彩色光阻层设在两层所述钝化层之间。这样，源极和漏极为金属材料制成，源极和漏极的侧边从微结构来看都有金属毛刺的现象，通过设置两层钝化层，能够更好的对源极和漏极上的金属毛刺进行覆盖，非常有效的防止金属毛刺裸露在保护层外，使得保护层能够更好的对源极和漏极进行保护，有效的避免后续的制程对源极和漏极的影响，从而非常好的提高显示面板的良品率；而且将彩色光阻层设在两层钝化层之间，能够非常好的对彩色光阻层进行保护，有效的防止后续制程使彩色光阻层的有机材料释放出一些有害杂质气体，从而实现对显示面板的有效保护，增加其效率及寿命。
根据本申请的另一个方面，本申请还公开了一种显示装置，所述显示装置包括如上所述的显示面板。
本申请由于通过将钝化层覆盖于主动开关和彩色光阻层上，能有效防止彩色滤光片在后续制程中彩色光阻层的气体溢出问题的出现，使得钝化层能够非 常好的对彩色光阻层进行非常好的保护，从而保证了显示面板的寿命和效率，而且不需要增加制程的步骤，也不需要改变目前光罩的样式，仅需改变制程光罩顺序，即可实现对显示面板的有效保护，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果。
【附图说明】
图1是本申请实施例的发明人设计的显示面板的剖面示意图；
图2是本申请实施例的另一实施例方式显示面板的剖面示意图；
图3是本申请实施例的另一实施例方式显示面板的剖面示意图；
图4是本申请实施例的另一实施例方式显示面板的剖面示意图；
图5是本申请实施例的另一实施例方式显示面板的剖面示意图；
图6是本申请实施例的另一实施例方式显示面板的剖面示意图。
【具体实施方式】
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排 他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和较佳的实施例对本申请作进一步说明。
如图1所示，申请人设计了一款未公开的显示面板，显示面板包括基板1、主动开关2和彩色光阻层17，基板1上覆盖设置有缓冲层12和钝化层14，缓冲层12与钝化层14之间设有层间介质层13，缓冲层12与基板1之间设有遮光层11，彩色光阻层17设在钝化层14的上表面，主动开关2设在钝化层14的下表面，彩色光阻层17上还覆盖设置有平坦层15和发光层16，发光层16包括白色有机发光二极管161(White Organic Light-Emitting Diode，WOLED)；在蒸镀为主的AMOLED制程中，为了降低制程难度以及发光材料的色度和亮度的恶化不均，通常采用彩色光阻层17与白色有机发光二极管161的显示方法。采用传统的COA技术，在主动开关2制程完成之后进行钝化层14的涂布，用于对主动开关2进行保护，然后进行显示面板的彩色光阻层17的涂布(即RGB制程)，最后进行RGB制程的后续制程，如平坦层15的涂布和发光层16的设置等，在完成RGB制程后还有较为复杂的制程，后续的制程操作非常的复杂，非常容易破坏RGB制程的结构，而且不能很好的对显示面板的有效保护。
申请人进一步研究发现，由于RGB制程中的彩色光阻层17主要为有机材 料，在完成RGB制程后还有较为复杂的制程，后续的制程往往会使有机材料继续释放出一些有害杂质气体，导致显示面板受到破坏，进而影响显示寿命和效果。因此，申请人提供一种新的技术方案，可以有效的防止显示面板受到破坏，提高显示寿命和效果的显示面板。
下面参考附图描述本申请实施例的显示面板结构示意图。
如图2所示，该显示面板包括：基板1、主动开关2和彩色光阻层17；基板1上覆盖设置有钝化层14，钝化层14覆盖于主动开关2和彩色光阻层17上。
通过将钝化层14覆盖于主动开关2和彩色光阻层17上，能有效防止彩色滤光片在后续制程中彩色光阻层17的气体溢出问题的出现，使得钝化层14能够非常好的对彩色光阻层17进行非常好的保护，从而保证了显示面板的寿命和效率，而且不需要增加制程的步骤，也不需要改变目前光罩的样式，仅需改变制程光罩顺序，即可实现对显示面板的有效保护，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果。
基板1上覆盖设置有缓冲层12，缓冲层12与钝化层14之间设有层间介质层13，彩色光阻设在层间介质层13上，彩色光阻层17与主动开关2间隔设置，主动开关2能够非常好的起到遮光的作用，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，而且将彩色光阻层17与主动开关2间隔设置能够非常好的定义显示面板的像素，从而更好的控制和调节显示面板的显示效果。
如图3所示，钝化层14上设有平坦层15和发光层16，平坦层15设在钝化层14与发光层16之间，发光层16下表面设有透明阳极18，即透明阳极18设在发光层16与平坦层15之间，透明阳极有多种材料可供选择，例如可以采用石墨烯复合材料、铟锡氧化物(Indium tin oxide，ITO)等透明导电材料制作，发光层16上表面设有金属阴极19；发光层16上设有白色有机发光二极管161，白色有机发光二极管161与彩色光阻层17相对应设置，白色有机发光二极管161在基板1上的正投影面积大于彩色光阻层17在基板1上的正投影面积，而且白 色有机发光二极管161在基板1上的正投影能够完全覆盖彩色光阻层17在基板1上的正投影，使得白色有机发光二极管161发射的光线能够非常好的穿过彩色光阻层17，从而可以非常好的提高显示面板的显示效果。
主动开关2包括半导体层24、源极22、漏极23，源极22和漏极23分别连接在半导体层24的两端，半导体层24设在缓冲层12与层间介质层13之间，源极22和漏极23的一端均设在钝化层14和层间介质层13之间，源极22和漏极23的另一端穿过层间介质层13与半导体层24相连接；主动开关2还包括栅极21，栅极21设在层间介质层13内，栅极21和半导体层24之间设有栅极21绝缘层25，栅极21设在源极22和漏极23之间的位置，也能起到很好的遮光作用。
半导体层24为氧化物薄膜层，氧化物薄膜层可以采用的材料有ZnO，Zn-Sn-O,In-Zn-O,MgZnO,In-Ga-O,In2O3等，这些材料的制备可以采用磁控溅射，脉冲激光沉积，电子束蒸发等方法制备，相对于传统的非晶硅存在着载流子迁移率较低，光敏性强的问题，氧化物薄膜层薄膜层具有较高的载流子迁移率特性，而且在均匀性和稳定性等方面都具有明显的优势，显示出了巨大的应用前景；采用氧化物薄膜层的主动开关2具有较高的开关电流花比和较高的场效应迁移率，响应速度快，能够实现较大的驱动电流，可以制备大面积的显示面板；而且采用氧化物薄膜层的主动开关2可在室温下制备，低的制备温度就可以使用柔性衬底，从而导致柔性显示的出现，柔性显示技术具有更便携，更轻，更耐摔等，而采用氧化物半导体是非常的适合用于柔性显示的半导体材料。
可选的，氧化物薄膜层采用铟镓锌氧化物薄膜层，通过铟镓锌氧化物薄膜层的设置，能够非常有效的降低显示面板的功耗，从而更好的节省电能，非常的节约环保；而且其载流子迁移率是非晶硅的20至30倍，可以大大提高主动开关2对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率，同时更快的响应也大大提高了像素的行扫描速率，使得分辨率可以达到全高清(full HD)乃至超高清(Ultra Definition)级别程度；另外，由于晶体管数量减 少和提高了每个像素的透光率，使得显示面板具有更高的能效水平，而且效率更高；同时，利用非晶硅生产线生产，只需稍加改动，因此在成本方面比低温多晶硅更有竞争力。
基板1上设置有遮光层11，遮光层11的设置能够非常好的对发光层16的光线进行遮挡，有效的避免显示面板漏光，使得显示面板的显示效果更好；遮光层11设在源极22和漏极23在基板1的正投影之间，且遮光层11在基板1填充源极22和漏极23在基板1的正投影之间的间隔空隙，发光层16的光线照射到源极22和漏极23上，源极22和漏极23对光线进行有效的遮挡，发光层16的光线照射到源极22和漏极23之间的位置，首先栅极21能够很好的对光线进行遮挡，没有被遮挡的照射到遮光层11，遮光层11在基板1填充源极22和漏极23在基板1的正投影之间的间隔空隙，能够非常有效的对发光层16的光线进行遮挡，有效的防止了发光层16的光线在主动开关2出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果；当然也可以在栅极21在基板1上的正投影处不设置遮光层11，这样能够非常有效的节省耗材，能够非常好的降低显示面板的生产成本，而且能够有效的降低显示面板的质量，使得显示面板更加的方便移动。
如图4所示的实施方式公开的显示面板包括：基板1、主动开关2和彩色光阻层17；基板1上覆盖设置有钝化层14，钝化层14覆盖于主动开关2和彩色光阻层17上。通过将钝化层14覆盖于主动开关2和彩色光阻层17上，能有效防止彩色滤光片在后续制程中彩色光阻层17的气体溢出问题的出现，使得钝化层14能够非常好的对彩色光阻层17进行非常好的保护，从而保证了显示面板的寿命和效率，而且不需要增加制程的步骤，也不需要改变目前光罩的样式，仅需改变制程光罩顺序，即可实现对显示面板的有效保护。
基板1上覆盖设置有缓冲层12，缓冲层12与钝化层14之间设有层间介质层13，彩色光阻设在层间介质层13上，彩色光阻层17与主动开关2间隔设置， 主动开关2能够非常好的起到遮光的作用，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，而且将彩色光阻层17与主动开关2间隔设置能够非常好的定义显示面板的像素，从而更好的控制和调节显示面板的显示效果。
基板1上设置有遮光层11，遮光层11的设置能够非常好的对发光层16的光线进行遮挡，有效的避免显示面板漏光，使得显示面板的显示效果更好；遮光层11设在缓冲层12与基板1之间，源极22穿过缓冲层12与遮光层11相连接,能够非常有效的对发光层16的光线进行遮挡，有效的防止了发光层16的光线在主动开关2出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果。
遮光层11设在源极22和漏极23在基板1的正投影之间，且遮光层11在基板1填充源极22和漏极23在基板1的正投影之间的间隔空隙，发光层16的光线照射到源极22和漏极23上，源极22和漏极23对光线进行有效的遮挡，发光层16的光线照射到源极22和漏极23之间的位置，首先栅极21能够很好的对光线进行遮挡，没有被遮挡的照射到遮光层11，遮光层11在基板1填充源极22和漏极23在基板1的正投影之间的间隔空隙，能够非常有效的对发光层16的光线进行遮挡，有效的防止了发光层16的光线在主动开关2出现漏光，有效的缓解了显示不均或混色现象，使得显示面板的具有更好的显示效果，从而进一步的提高了显示面板的显示效果；当然也可以在栅极21在基板1上的正投影处不设置遮光层11，这样能够非常有效的节省耗材，能够非常好的降低显示面板的生产成本，而且能够有效的降低显示面板的质量，使得显示面板更加的方便移动。
如图5所示，钝化层14上设有平坦层15和发光层16，平坦层15设在钝化层14与发光层16之间，发光层16下表面设有透明阳极18，即透明阳极18设在发光层16与平坦层15之间，发光层16上表面设有金属阴极19；发光层16上设有白色有机发光二极管161，白色有机发光二极管161与彩色光阻层17相 对应设置，白色有机发光二极管161在基板1上的正投影面积大于彩色光阻层17在基板1上的正投影面积，而且白色有机发光二极管161在基板1上的正投影能够完全覆盖彩色光阻层17在基板1上的正投影，使得白色有机发光二极管161发射的光线能够非常好的穿过彩色光阻层17，从而可以非常好的提高显示面板的显示效果。
主动开关2包括半导体层24、源极22、漏极23，源极22和漏极23分别连接在半导体层24的两端，半导体层24设在缓冲层12与层间介质层13之间，源极22和漏极23的一端均设在钝化层14和层间介质层13之间，源极22和漏极23的另一端穿过层间介质层13与半导体层24相连接；主动开关2还包括栅极21，栅极21设在层间介质层13内，栅极21和半导体层24之间设有栅极绝缘层25，栅极21设在源极22和漏极23之间的位置，也能起到很好的遮光作用。
半导体层24为氧化物薄膜层，氧化物薄膜层可以采用的材料有ZnO，Zn-Sn-O,In-Zn-O,MgZnO,In-Ga-O,In2O3等，这些材料的制备可以采用磁控溅射，脉冲激光沉积，电子束蒸发等方法制备，相对于传统的非晶硅存在着载流子迁移率较低，光敏性强的问题，氧化物薄膜层薄膜层具有较高的载流子迁移率特性，而且在均匀性和稳定性等方面都具有明显的优势，显示出了巨大的应用前景；采用氧化物薄膜层的主动开关2具有较高的开关电流比和较高的场效应迁移率，响应速度快，能够实现较大的驱动电流，可以制备大面积的显示面板；而且采用氧化物薄膜层的主动开关2可在室温下制备，低的制备温度就可以使用柔性衬底，从而导致柔性显示的出现，柔性显示技术具有更便携，更轻，更耐摔等，而采用氧化物半导体是最适合用于柔性显示的半导体材料。
可选的，氧化物薄膜层采用铟镓锌氧化物薄膜层，通过铟镓锌氧化物薄膜层的设置，能够非常有效的降低显示面板的功耗，从而更好的节省电能，非常的节约环保；而且其载流子迁移率是非晶硅的20至30倍，可以大大提高主动开关2对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率，同时更快的响应也大大提高了像素的行扫描速率，使得分辨率可以达到全高清 乃至超高清级别程度；另外，由于晶体管数量减少和提高了每个像素的透光率，使得显示面板具有更高的能效水平，而且效率更高；同时，利用非晶硅生产线生产，只需稍加改动，因此在成本方面比低温多晶硅更有竞争力。
如图6所示，本实施例对钝化层14进行改进，将钝化层14两层，钝化层14设在平坦层15和层间介质层13之间，彩色光阻层17设在两层钝化层14之间，源极22和漏极23为金属材料制成，源极22和漏极23的侧边从微结构来看都有金属毛刺的现象，通过设置两层钝化层14，能够更好的对源极22和漏极23上的金属毛刺进行覆盖，非常有效的防止金属毛刺裸露在保护层外，使得保护层能够更好的对源极22和漏极23进行保护，有效的避免后续的制程对源极22和漏极23的影响，从而非常好的提高显示面板的良品率；而且将彩色光阻层17设在两层钝化层14之间，能够非常好的对彩色光阻层17进行保护，有效的防止后续制程使彩色光阻层17的有机材料释放出一些有害杂质气体，从而实现对显示面板的有效保护，增加其效率及寿命。
根据本申请的另一个方面，本申请还公开了一种显示装置，显示装置包括如上的显示面板，关于显示面板的具体结构和连接关系可参见图1至图6，在此不再一一详述。
以上内容是结合具体的优选实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，可以做出若干简单的推演或替换，都应当视为属于本申请的保护范围。

Claims (20)

  1. 一种显示面板，包括：
    基板；
    主动开关，设置在基板上；
    彩色光阻层，设置在基板上；
    所述基板上覆盖设置有钝化层，所述钝化层覆盖于所述主动开关和所述彩色光阻层上；所述基板上覆盖设置有缓冲层，所述缓冲层与所述钝化层之间设有层间介质层，所述彩色光阻设在所述层间介质层上，所述彩色光阻层与所述主动开关间隔设置；所述主动开关包括半导体层、源极、漏极，所述源极和所述漏极分别连接在半导体层的两端，所述半导体层设在所述缓冲层与所述层间介质层之间，所述源极和所述漏极的一端均设在所述钝化层和所述层间介质层之间，所述源极和所述漏极的另一端穿过所述层间介质层与所述半导体层相连接；所述基板上设置有遮光层，所述遮光层设在所述缓冲层与所述基板之间，所述源极穿过所述缓冲层与所述遮光层相连接；所述遮光层设在所述源极和所述漏极在所述基板的正投影之间，且所述遮光层在所述基板填充所述源极和所述漏极在所述基板的正投影之间的间隔空隙。
  2. 一种显示面板，包括：
    基板；
    主动开关，设置在基板上；
    彩色光阻层，设置在基板上；
    所述基板上覆盖设置有钝化层，所述钝化层覆盖于所述主动开关和所述彩色光阻层上。
  3. 如权利要求2所述的一种显示面板，其中，所述基板上覆盖设置有缓冲层，所述缓冲层与所述钝化层之间设有层间介质层，所述彩色光阻设在所述层间介质层上，所述彩色光阻层与所述主动开关间隔设置。
  4. 如权利要求3所述的一种显示面板，其中，所述钝化层上设有平坦层和发光层，所述平坦层设在所述钝化层与所述发光层之间，所述发光层上设有白色有机发光二极管，所述白色有机发光二极管与所述彩色光阻层相对应设置。
  5. 如权利要求3所述的一种显示面板，其中，所述主动开关包括半导体层、源极、漏极，所述源极和所述漏极分别连接在半导体层的两端，所述半导体层设在所述缓冲层与所述层间介质层之间，所述源极和所述漏极的一端均设在所述钝化层和所述层间介质层之间，所述源极和所述漏极的另一端穿过所述层间介质层与所述半导体层相连接。
  6. 如权利要求5所述的一种显示面板，其中，所述主动开关包括栅极，所述栅极设在所述层间介质层内，所述栅极和所述半导体层之间设有栅极绝缘层。
  7. 如权利要求5所述的一种显示面板，其中，所述半导体层为铟镓锌氧化物薄膜层。
  8. 如权利要求5所述的一种显示面板，其中，所述基板上设置有遮光层，所述遮光层设在所述缓冲层与所述基板之间，所述源极穿过所述缓冲层与所述遮光层相连接。
  9. 如权利要求8所述的一种显示面板，其中，所述遮光层设在所述源极和所述漏极在所述基板的正投影之间，且所述遮光层在所述基板填充所述源极和所述漏极在所述基板的正投影之间的间隔空隙。
  10. 如权利要求4所述的一种显示面板，其中，所述钝化层两层，所述钝化层设在所述平坦层和所述层间介质层之间，所述彩色光阻层设在两层所述钝化层之间。
  11. 一种显示装置，其中，所述显示装置包括显示面板，所述显示面板包括：
    基板；
    主动开关，设置在基板上；
    彩色光阻层，设置在基板上；
    所述基板上覆盖设置有钝化层，所述钝化层覆盖于所述主动开关和所述彩色光阻层上。
  12. 如权利要求11所述的一种显示装置，其中，所述基板上覆盖设置有缓冲层，所述缓冲层与所述钝化层之间设有层间介质层，所述彩色光阻设在所述层间介质层上，所述彩色光阻层与所述主动开关间隔设置。
  13. 如权利要求12所述的一种显示装置，其中，所述钝化层上设有平坦层和发光层，所述平坦层设在所述钝化层与所述发光层之间，所述发光层上设有白色有机发光二极管，所述白色有机发光二极管与所述彩色光阻层相对应设置。
  14. 如权利要求12所述的一种显示装置，其中，所述主动开关包括半导体层、源极、漏极，所述源极和所述漏极分别连接在半导体层的两端，所述半导体层设在所述缓冲层与所述层间介质层之间，所述源极和所述漏极的一端均设在所述钝化层和所述层间介质层之间，所述源极和所述漏极的另一端穿过所述层间介质层与所述半导体层相连接。
  15. 如权利要求14所述的一种显示装置，其中，所述主动开关包括栅极，所述栅极设在所述层间介质层内，所述栅极和所述半导体层之间设有栅极绝缘层。
  16. 如权利要求14所述的一种显示装置，其中，所述半导体层为氧化物薄膜层。
  17. 如权利要求16所述的一种显示装置，其中，所述氧化物薄膜层为铟镓锌氧化物薄膜层。
  18. 如权利要求14所述的一种显示装置，其中，所述基板上设置有遮光层，所述遮光层设在所述缓冲层与所述基板之间，所述源极穿过所述缓冲层与所述遮光层相连接。
  19. 如权利要求18所述的一种显示装置，其中，所述遮光层设在所述源极和所述漏极在所述基板的正投影之间，且所述遮光层在所述基板填充所述源极和所述漏极在所述基板的正投影之间的间隔空隙。
  20. 如权利要求13所述的一种显示装置，其中，所述钝化层两层，所述钝化层设在所述平坦层和所述层间介质层之间，所述彩色光阻层设在两层所述钝化层之间。
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