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WO2018151313A1 - 焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法 - Google Patents

焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法 Download PDF

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Publication number
WO2018151313A1
WO2018151313A1 PCT/JP2018/005923 JP2018005923W WO2018151313A1 WO 2018151313 A1 WO2018151313 A1 WO 2018151313A1 JP 2018005923 W JP2018005923 W JP 2018005923W WO 2018151313 A1 WO2018151313 A1 WO 2018151313A1
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Prior art keywords
sintered material
base
sintered
particles
metal
Prior art date
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PCT/JP2018/005923
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English (en)
French (fr)
Inventor
博之 野本
昌男 笹平
Original Assignee
積水化学工業株式会社
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Publication date
Application filed by 積水化学工業株式会社 filed Critical 積水化学工業株式会社
Priority to EP18754224.6A priority Critical patent/EP3584333A4/en
Priority to CN201880012824.7A priority patent/CN110312810A/zh
Priority to JP2018511770A priority patent/JP7088828B2/ja
Priority to US16/485,558 priority patent/US11961815B2/en
Priority to KR1020197023424A priority patent/KR102616947B1/ko
Priority to CN202210825060.1A priority patent/CN115319082A/zh
Publication of WO2018151313A1 publication Critical patent/WO2018151313A1/ja
Priority to JP2022062421A priority patent/JP2022104982A/ja

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    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/05Mixtures of metal powder with non-metallic powder
    • C22C1/058Mixtures of metal powder with non-metallic powder by reaction sintering (i.e. gasless reaction starting from a mixture of solid metal compounds)
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Definitions

  • the present invention relates to a sintered material, a connection structure having the sintered material in a connection portion, composite particles, a bonding composition, and a method for producing the sintered material.
  • connection member is used to fix a semiconductor element in a non-insulated semiconductor device (connection structure) which is one of power semiconductor devices (power devices) used for an inverter or the like.
  • a connection member can be formed from, for example, a curable adhesive or a sinterable material, and can be one of the electrodes of the semiconductor device depending on the type of material of the adhesive member.
  • Patent Documents 1 and 2 disclose using a sintered material with adjusted porosity as a connection member for fixing a semiconductor element. By applying such a sintered material as a connection member of a semiconductor element, heat dissipation and bonding strength can be ensured.
  • the present invention has been made in view of the above, and manufactures a sintered material excellent in both the effect of relaxing thermal stress and the bonding strength, a connection structure including the sintered material, composite particles, and a sintered material.
  • An object of the present invention is to provide a bonding composition and a method for producing a sintered material.
  • the present inventors achieved the above object by controlling the distribution state of relaxation parts (holes, etc.) that exert a stress relaxation action in the sintered material.
  • the present inventors have found that this can be done and have completed the present invention.
  • the present invention includes, for example, the inventions described in the following sections.
  • Item 1 In sintered materials, A base, a buffer, and a filler;
  • the base is a sintered metal body,
  • the buffer part and the filling part are dispersed in the base part,
  • the buffer portion is formed of at least one of a hole and a material that is not the same as the sintered body,
  • the filling portion is formed of at least one of particles and fibers,
  • a base In sintered materials, A base, a buffer, and a filler;
  • the base is a sintered metal body,
  • the buffer part and the filling part are dispersed in the base part,
  • the buffer portion is formed of at least one of a hole and a material that is not the same as the sintered body,
  • the filling portion is formed of at least one of particles and fibers,
  • a sintered material having a value of A of 0.2 or more, where A is a kurtosis of the volume distribution of the base in the three-dimensional image of the sintered material.
  • Item 3. Item 2. The sintered material according to Item 1, wherein the AB value is 0.1 or more.
  • Item 4. Item 4.
  • Item 5. The sintered material according to any one of Items 1 to 4, wherein a closest distance between the filled portions is 1 ⁇ m or more and 10 ⁇ m or less.
  • Item 6. The sintered material according to any one of Items 1 to 5, wherein the base portion is distributed so as to have orientation in a one-dimensional direction.
  • Item 7. Item 7. A connection structure having the sintered material according to any one of Items 1 to 6 at a connection part.
  • Item 8 is used to form a filled portion of the sintered material according to any one of Items 1 to 7, and a structure in which a colloidal catalyst or a sintering accelerator is arranged on the base particle, or a metal on the base particle Composite particles having a structure in which parts are coated.
  • a bonding composition comprising a composite having a structure in which a colloidal catalyst or a sintering accelerator is disposed on a substrate, or a composite having a structure in which a metal part is coated on a substrate, and metal particles
  • the kurtosis of the volume distribution of the base in the three-dimensional image of the sintered material of the bonding composition is A
  • the kurtosis of the volume distribution of the base in the three-dimensional image of the sintered material of the bonding composition from which the composite is removed A bonding composition satisfying A> B when B is satisfied.
  • a bonding composition comprising a composite having a structure in which a colloidal catalyst or a sintering accelerator is disposed on a substrate, or a composite having a structure in which a metal part is coated on a substrate, and metal particles
  • a bonding composition having a value of A of 0.2 or more, where A is a kurtosis of a volume distribution of a base in a three-dimensional image of a sintered material of the bonding composition.
  • the sintered material according to the present invention is excellent in both thermal stress relaxation action and bonding strength. For this reason, the sintered material which concerns on this invention is suitable as a joining member for joining a semiconductor element, for example.
  • the composite particle according to the present invention can be suitably used as a raw material for obtaining the sintered material, and is particularly suitable as a raw material used for forming a filling portion of the sintered material.
  • FIG. 1 It is a schematic diagram which shows an example of embodiment of the sintered material of this invention, and shows the cross section.
  • (A) is a three-dimensional image obtained in Example 1
  • (b) is a diagram for explaining one of the 125 fractions of the sintered material.
  • FIG. 1 is a schematic view showing a cross section of the sintered material of the present invention.
  • the sintered material means a product formed by sintering.
  • the sintered material of the present embodiment includes a base 1, a buffer 2, and a filler 3. As shown in FIG. 1, the buffer portion 2 and the filling portion 3 are dispersed in the base portion 1. In addition, although it is only a cautionary note, you may express that the buffer part 2 and the filling part 3 are disperse
  • the base portion 1 is a sintered metal body and is a portion that becomes a base material of the sintered material.
  • the buffer portion 2 is formed of at least one of a hole and a material that is not the same as the sintered body.
  • the sintered material has pores, but the sintered material of the present invention may have pores, and some or all of the pores are not the same as the sintered body. In some cases, the material is filled.
  • the buffer portion 2 present in the sintered material can be formed only with pores. Or the buffer part 2 which exists in a sintered material may be formed only with the material which is not the same as the said sintered compact.
  • the sintered material can also have both the buffer part 2 formed with a void
  • the filling part 3 is formed of at least one of particles and fibers.
  • a plurality of filling portions 3 are formed in the sintered material. There may be an embodiment in which a part of the plurality of filling portions 3 is formed of particles and the rest are formed of fibers.
  • the plurality of filled portions 3 can be scattered in the sintered material independently without being agglomerated, or a part can be agglomerated. From the viewpoint that the buffer portion 2 is likely to be dispersed and present, it is preferable that the filling portion 3 is uniformly dispersed without being aggregated and present in the sintered material.
  • the filling portion 3 exists so that a part or the whole of the surface is in contact with the base portion 1 (sintered body).
  • the filling portion 3 and the sintered body of the base portion 1 can be brought into contact with each other by chemical bonding, for example.
  • the type of such chemical bond is not limited.
  • the chemical bond can be a metal bond.
  • the metal and the metal which comprises the base 1 may form the solid solution.
  • the sintered material of the present invention may have a structure as shown in FIG.
  • the sintered material of the present invention can be classified into the following two types of forms.
  • the two types of sintered materials are referred to as a first embodiment and a second embodiment, respectively.
  • the value of A is 0.2 or more.
  • a three-dimensional image of the sintered material can be obtained by observing a cross section of the sintered material with a scanning electron microscope (SEM) and analyzing it with commercially available three-dimensional image analysis software.
  • SEM scanning electron microscope
  • the sintered material is cut at a plurality of locations, and each cross section is observed with a scanning electron microscope (SEM).
  • SEM scanning electron microscope
  • This cutting is performed with a fine interval, and in detail, is appropriately set according to the size of the buffer portion 2 and the filling portion 3 of the sintered material. As the interval is smaller, an accurate three-dimensional image is obtained.
  • interval is 400 nm or less, More preferably, it is 200 nm or less.
  • the FIB-SEM method using “Helios 660” manufactured by FEI is used to photograph each cross section of the sintered material as described above, and the obtained SEM image is obtained as a three-dimensional image.
  • a three-dimensional image can be obtained by reconstructing the image with the above software. The reconstruction of the three-dimensional image can be performed using software such as “AVIZO” manufactured by FEI.
  • the kurtosis A of the volume distribution of the base 1 (hereinafter simply referred to as “kurtosis A”) can be measured by the following procedure.
  • a volume distribution is created based on the volume of the base 1 of each of the 125 fractions, and the kurtosis A is calculated from the volume distribution.
  • the volume distribution and the kurtosis A can be calculated using commercially available calculation software, for example, “Excel2013” manufactured by Microsoft Corporation.
  • the kurtosis (kurtosis A) of the volume distribution of the base 1 in the three-dimensional image of the sintered material can be measured.
  • the kurtosis is defined as “kurtosis” by a ratio of the fourth-order moment ⁇ 4 around the average value to the fourth power of the standard deviation ⁇ 4 / ⁇ 4 .
  • the kurtosis is an index representing the probability density function of the random variable and the sharpness of the frequency distribution. If the kurtosis is large, the distribution has a sharp peak and a long and thick tail compared to the normal distribution, and if the kurtosis is small, the distribution has a rounder peak and a short, narrow tail than the normal distribution.
  • the kurtosis B of the volume distribution of the base portion 1 (hereinafter simply abbreviated as “kurtosis B”) in the three-dimensional image of the sintered material from which the filling portion 3 is removed can also be measured based on the three-dimensional image. it can.
  • the “sintered material from which the filling portion 3 is removed” means a sintered material from which only the filling portion 3 is removed in the sintered material for measuring the kurtosis A. Therefore, the sintered material for measuring the kurtosis A and the sintered material for measuring the kurtosis B are the same except that the filling portion 3 does not exist.
  • the kurtosis B can also be measured by the same procedure as that for measuring the kurtosis A. That is, it is possible to acquire a three-dimensional image of the sintered material, fractionate the three-dimensional image into 125, and measure the kurtosis B of the base 1 from the volume distribution of the base 1 of each fraction.
  • the kurtosis A is greater than the kurtosis B.
  • the sintered material having the filling portion 3 has a more uniform volume distribution of the base 1 than the sintered material having no filling portion 3. That is, the sintered material including the filling portion 3 has a more uniform volume distribution of the base 1 than the sintered material not including the filling portion 3, and the size of the buffer portion 2 is monodispersed. be able to.
  • the present inventors have found that the base part and the filling part have a chemical bond, so that a relaxation action against thermal stress is likely to occur.
  • the bonding strength of the sintered material means the bonding strength between the sintered material and the bonding member when the sintered material is used for bonding a target member such as a semiconductor element. .
  • the filling portion 3 formed of a specific material and dispersed in the sintered body (base portion 1) disperses the buffer portion 2 with a uniform volume distribution. That is, it is considered that the filling unit 3 has an action capable of adjusting the distribution of the buffer unit 2.
  • the value of the kurtosis A is 0.2 or more, preferably 0.3 or more, more preferably 0.4 or more, and particularly preferably 0.5 or more. It is. In this case, both the thermal stress and the bonding strength of the sintered material are further improved.
  • the upper limit of the kurtosis A value is preferably as large as possible, but is usually 125.
  • the content of the filling portion 3 is preferably 0.01 wt% or more and 10 wt% or less with respect to the total weight of the sintered material. In this case, the kurtosis A is easily increased, and both the thermal stress relaxation action and the bonding strength of the sintered material are further improved.
  • the content of the filling part 3 is more preferably 5% by weight or less with respect to the total weight of the sintered material.
  • the closest distance between the filled portions 3 is preferably 1 ⁇ m or more and 10 ⁇ m or less.
  • the value of the kurtosis A can be increased, and both the thermal stress relaxation action and the bonding strength of the sintered material are further improved.
  • the closest distance between the filling portions 3 is determined by selecting 50 pairs of adjacent filling portions 3 from the three-dimensional image obtained by the same method as described above, and measuring the distance between the outermost layers, respectively. 10 sets are selected in order from the shortest distance, and the 10 sets of distances are averaged.
  • “AVIZO” manufactured by FEI can be used to measure the distance between the outermost layers of the pair of filling portions 3.
  • the base portions 1 are distributed so as to have orientation in a one-dimensional direction.
  • both the thermal stress relaxation action and the bonding strength of the sintered material are further improved, and the thermal stress relaxation action and the bonding strength in the direction orthogonal to the one-dimensional direction are easily improved.
  • the direction orthogonal to the one-dimensional direction refers to, for example, a direction orthogonal to one direction on the surface of the sintered material.
  • the type of the metal sintered body forming the base 1 is not particularly limited.
  • the metal which forms a sintered compact can be made to be the same as the well-known metal used in order to form a sintered compact.
  • the buffer portion 2 is more easily dispersed more uniformly.
  • the type of the material is not particularly limited.
  • examples of the material forming the buffer portion 2 include metals, resins, organic substances, inorganic substances, glasses, and ceramics.
  • the buffer part 2 is a metal, it means that it is a different kind of metal element from the metal constituting the sintered body.
  • resin, organic substance (except resin), inorganic substance, glass, ceramics, etc. are preferable.
  • the buffer portion 2 is preferably a hole from the viewpoint that the sintered material can be easily manufactured and the sintered material can be reduced in weight.
  • the type of particles is not particularly limited.
  • the particles include resin particles, inorganic particles excluding metal particles, organic-inorganic hybrid particles, and metal particles.
  • the filling portion 3 When the filling portion 3 is formed of the composite, the affinity between the filling portion 3 and the base portion 1 that is a sintered body is obtained due to the colloidal catalyst, the sintering accelerator, or the metal portion present on the surface of the composite. In particular, chemical bonding between the filling portion 3 and the base portion 1 that is a sintered body is likely to occur. Thereby, the filling part 3 tends to disperse
  • the composite is particularly preferably a composite particle.
  • the base material examples include resins, inorganic substances other than metals, and organic-inorganic hybrid resins.
  • the substrate is the substrate particle, examples thereof include resin particles, inorganic particles excluding metal particles, organic-inorganic hybrid particles, and metal particles.
  • the substrate particles are preferably resin particles, inorganic particles other than metal particles, or organic-inorganic hybrid particles.
  • the substrate or the substrate particle is a resin
  • various organic substances are suitably used.
  • examples of such materials include polyolefin resins such as polyethylene, polypropylene, polystyrene, silicone resin, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; acrylic resins such as polymethyl methacrylate and polymethyl acrylate; and polyalkylene terephthalate.
  • the substrate is resin particles
  • it can also be obtained by polymerizing one or more of various polymerizable monomers having an ethylenically unsaturated group.
  • the material of the resin particles is preferably a polymer obtained by polymerizing one or more polymerizable monomers having a plurality of ethylenically unsaturated groups.
  • the monomer having an ethylenically unsaturated group may be a non-crosslinkable monomer and / or a crosslinkable monomer.
  • (meth) acryl means one or both of “acryl” and “methacryl”
  • (meth) acrylate means one or both of “acrylate” and “methacrylate”. means.
  • non-crosslinkable monomer examples include, as vinyl compounds, styrene monomers such as styrene, ⁇ -methyl styrene, chlorostyrene; methyl vinyl ether, ethyl vinyl ether, propyl vinyl ether, 1,4-butanediol diester.
  • Vinyl ethers such as vinyl ether, cyclohexanedimethanol divinyl ether, diethylene glycol divinyl ether; acid vinyl esters such as vinyl acetate, vinyl butyrate, vinyl laurate, and vinyl stearate; halogen-containing monomers such as vinyl chloride and vinyl fluoride ; (Meth) acrylic compounds such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) ) Acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, alkyl (meth) acrylates such as isobornyl (meth) acrylate; 2-hydroxyethyl (meth) acrylate, glycerol (meth) acryl
  • crosslinkable monomer examples include vinyl monomers such as vinyl compounds such as divinylbenzene, 1,4-divinyloxybutane and divinylsulfone; (meth) acrylic compounds such as tetramethylolmethanetetra ( (Meth) acrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol Tri (meth) acrylate, glycerol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, (poly) tetramethyleneglycol Polyfunctional (meth) acrylates
  • crosslinkable and non-crosslinkable monomers are not limited to the monomers listed above, but may be other polymerizable monomers, for example, known polymerizable monomers.
  • the resin particles can be obtained by polymerizing the polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of this method include suspension polymerization in the presence of a radical polymerization initiator, and polymerization by swelling monomers together with a radical polymerization initiator using non-crosslinked seed particles (so-called seed weight). Legal).
  • the conditions for these polymerization methods are not particularly limited, and can be known conditions.
  • the substrate is an inorganic or organic-inorganic hybrid resin excluding metal particles
  • examples of the inorganic material that is a material of the substrate include silica and carbon black. This inorganic substance is preferably not a metal.
  • the silica is not particularly limited. For example, particles obtained by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups to form crosslinked polymer particles, and then firing as necessary. Is mentioned.
  • the organic-inorganic hybrid resin include organic-inorganic hybrid particles formed from a crosslinked alkoxysilyl polymer and an acrylic resin. When it is a base particle, it can be set as the inorganic particle or organic-inorganic hybrid resin particle except a metal particle.
  • the base material include a resin containing polyrotaxane.
  • the polyrotaxane refers to a structure in which a chain polymer is formed through an opening of a cyclic molecule.
  • the kind of polyrotaxane is not specifically limited, For example, a well-known polyrotaxane is mentioned. If it is a base particle, it can be set as the particle
  • the polyrotaxane is preferably a crosslinked product.
  • a structure in which a cyclic molecule in a polyrotaxane and a cyclic molecule in another polyrotaxane are crosslinked with a polymer chain is preferable.
  • the flexibility of the base material is increased, so that the stress relaxation effect is easily exhibited, and thus, when the sintered material is applied to the connection structure, cracks and warping of the connection structure are caused. It becomes easy to suppress the occurrence.
  • the kind is not specifically limited, For example, a well-known crosslinked polyrotaxane is mentioned.
  • the polyrotaxane can be produced by, for example, a known method.
  • a polyrotaxane having a crosslinked structure is produced by reacting a polyrotaxane having a cyclic molecule having a polymerizable functional group with a mixture of a polymerizable monomer. This reaction can be performed by, for example, a known method.
  • the type of polyrotaxane having a cyclic molecule having a polymerizable functional group is not particularly limited. Specific examples include “Celum (registered trademark) Superpolymer SM3405P”, “Celum (registered trademark) Key Mixture SM3400C”, and “Celum (registered trademark)” commercially available from Advanced Soft Materials, Inc.
  • the average particle diameter of the base particles can be set to 0.1 ⁇ m or more and 50 or less, for example, from the viewpoint of ensuring excellent dispersibility of the filling portion 3 in the sintered material.
  • the average particle diameter of the substrate particles is preferably 1 ⁇ m or more, more preferably 3 ⁇ m or more, and preferably 50 ⁇ m or less, more preferably 10 ⁇ m or less.
  • the above-mentioned average particle diameter of the base particles means the diameter when the shape is a true sphere, and means the average value of the maximum diameter and the minimum diameter when the shape is a shape other than the true sphere.
  • the average particle diameter of the substrate particles means an average value obtained by observing the substrate particles with a scanning electron microscope and measuring the particle diameters of 50 randomly selected substrate particles with calipers.
  • covered with another material as mentioned above also includes the coating layer.
  • the coefficient of variation (CV value) of the particle diameter of the substrate particles is, for example, 50% or less.
  • the coefficient of variation (CV value) is expressed by the following equation.
  • CV value (%) ( ⁇ / Dn) ⁇ 100 ⁇ : standard deviation of particle diameter of particle Dn: average value of particle diameter of particle.
  • the CV value of the base particles is preferably 40% or less, more preferably 30% or less, from the viewpoint that the buffer part 2 is easily monodispersed.
  • the lower limit of the CV value of the particle diameter of the substrate particles is not particularly limited.
  • the CV value may be 0% or more, 5% or more, 7% or more, or 10% or more.
  • the hardness of the substrate particles can be, for example, 10 N / mm 2 or more and 3000 N / mm 2 or less.
  • the 10% K value is preferably 100 N / mm 2 or more, more preferably 1000 N / mm 2 or more, preferably 2500 N / mm. 2 or less, particularly preferably 2000 N / mm 2 or less.
  • the 10% K value referred to here is a compression elastic modulus when the substrate particles are compressed by 10%. It can be measured as follows. First, using a micro-compression tester, base material particles are compressed under a condition that a smooth tester end face of a cylinder (diameter 50 ⁇ m, made of diamond) is loaded at 25 ° C. and a maximum test load 20 mN over 60 seconds. The load value (N) and compression displacement (mm) at this time are measured. From the measured value obtained, the compression elastic modulus can be obtained by the following formula.
  • Examples of the sintering accelerator or colloidal catalyst include fine metal particles and flux components.
  • the oxide film on the surface of the sintered body is removed during the sintering process by the flux component arranged on the base particle, and the sintering reaction is promoted on the surface of the base particle, so that the contact area between the base particle and the sintered body is increased. Becomes larger.
  • the type of base material is the same as that of the composite having a structure in which a colloidal catalyst or a sintering accelerator is arranged on the base material.
  • the substrate may be substrate particles.
  • the metal part is formed of a material containing metal.
  • the metal include gold, silver, tin, copper, copper, germanium, indium, palladium, tellurium, thallium, bismuth, zinc, arsenic, selenium, iron, lead, ruthenium, aluminum, cobalt, titanium, antimony, and cadmium. , Silicon, nickel, chromium, platinum, rhodium and the like.
  • the metal part may be any one of these metals, or may include two or more. Further, the metal part may be an alloy of two or more metals among the metals exemplified above.
  • the metal part may be formed in a layer shape so as to cover the base material, for example.
  • the metal part may be formed of one layer or may be formed of a plurality of layers.
  • the thickness of the metal part can be, for example, 0.5 nm or more, preferably 10 nm or more, and can be 10 ⁇ m or less, preferably 1 ⁇ m or less, more preferably 500 nm or less, and particularly preferably 300 nm or less.
  • the composite particles as the filling part 3 can be more uniformly dispersed in the base part 1 and the buffer part 2 can be more uniformly dispersed. .
  • the metal part may have a plurality of protrusions on the outer surface.
  • the protrusion can be formed by a known method, for example.
  • the shape and size of the protrusion are not particularly limited.
  • the cross-section of the protrusion may be spherical or elliptical, or may be formed in a needle shape that becomes sharper toward the protrusion tip.
  • the average height of the protrusions can be 1 nm or more and 1000 nm or less, preferably 5 nm or more, more preferably 50 nm or more, preferably 900 nm or less, more preferably 500 nm or less.
  • the composite for example, composite particles
  • the composite particles can easily come into contact with the base portion 1 that is a sintered body.
  • the average diameter of the bottom surface of the protrusion can be 3 nm or more and 5000 nm or less, preferably 50 nm or more, more preferably 80 nm or more, preferably 1000 nm or less, more preferably 500 nm or less.
  • the average diameter of the bottom surface of the protrusion here is the same as the measurement method of the average height of the protrusion described above, and each of the 20 composite particle protrusions randomly selected by FE-SEM observation using an embedded resin was used. Observe, measure the distance between both ends of each base, and say the value obtained by arithmetically averaging them.
  • the composite has a structure in which a colloidal catalyst or a sintering accelerator is arranged on a part or all of the surface of the substrate.
  • the composite has a structure in which a metal part is coated on a part or all of the surface of the substrate.
  • the composite is a composite particle, it has a structure in which a colloidal catalyst or a sintering accelerator is arranged on part or all of the surface of the base particle.
  • the composite particle has a structure in which a metal part is coated on a part or all of the surface of the base material.
  • a base particle having a recess and a colloid catalyst or a metal part disposed on the surface of the base particle may be provided.
  • the concave portion can be coated with a colloidal catalyst or a metal part.
  • the method for preparing the base particles having the recesses is not particularly limited.
  • the recesses can be formed in the base particles by post-processing the base particles.
  • the formation method of the recessed part by post-processing is not specifically limited, For example, a well-known method is employable. Specifically, a method of etching the surface of the substrate particles, a method of plasma treatment in an oxygen atmosphere, a method of ozone treatment and heat treatment, a method of humidification treatment, a method of heat treatment in vacuum, under pressure and humidification conditions Examples thereof include a heat treatment method, a wet treatment method using an oxidizing agent, and a physical treatment method using a ball mill.
  • the average depth of the recess is not particularly limited.
  • the average depth of the recesses can be 0.1% or more and 80% or less of the average radius of the base particles.
  • the depth of a recessed part here refers to the distance from the surface of the spherical base material particle to the point which becomes the bottom face of a recessed part on the assumption that the base material particle which has a recessed part is spherical.
  • the projections of 20 composite particles randomly selected by FE-SEM observation using an embedded resin were observed in the same procedure as the above-described method for measuring the average height of the projections, The value obtained by arithmetically averaging the depth of.
  • the composite particle When the composite particle has a recess, the composite particle easily follows deformation, and as a result, the thermal stress relaxation action and the bonding strength of the sintered material are further improved.
  • the shape of the particles for forming the filling portion 3 is not particularly limited.
  • Examples of the shape of the particles include a spherical shape, an elliptical shape, an indefinite shape, a needle shape, a rod shape, a plate shape, and a scale shape.
  • the shape of the particles is preferably spherical or elliptical.
  • the shape of the particles is preferably a needle shape, a rod shape, or a plate shape.
  • the average particle diameter of the particles forming the filling portion 3 can be set to 0.1 ⁇ m or more and 50 ⁇ m or less from the viewpoint of ensuring the dispersibility of the filling portion 3 in the base 1 which is a sintered body, for example.
  • the average particle diameter of the particles is preferably 1 ⁇ m or more, more preferably 3 ⁇ m or more, and preferably 10 ⁇ m or less.
  • the type of fiber is not particularly limited.
  • the fibers include natural fibers and synthetic fibers, glass fibers, carbon fibers, and rock fibers.
  • natural fibers include cellulose, silk, cotton, wool, and hemp.
  • the synthetic fiber include polyester such as polyethylene terephthalate, polyamide, polyimide, acrylic, polyolefin, polymethylpentene, polyarylate, polyacetal, polyphenylene oxide, polysulfone, polyether ether ketone, and polyphenylene sulfide.
  • the method for producing the sintered material having the above structure is not particularly limited. For example, it is possible to produce a sintered material by a known method.
  • a joining composition containing a metal for forming the base portion 1, a material for forming the buffer portion 2, particles and / or fibers for forming the filling portion 3 is used as a sintering raw material
  • a sintered material can be obtained by sintering the composition.
  • the composition for joining does not contain a 2nd raw material.
  • the metal for forming the base portion 1 is “first raw material”
  • the material for forming the buffer portion 2 is “second raw material”
  • the particles and / or fibers for forming the filling portion 3 are “ It is called “third raw material”.
  • the first raw material is not particularly limited as long as it is a metal raw material that can form the sintered body of the base 1.
  • the first raw material can be metal particles.
  • the metal particles may be single metal particles or metal compound particles.
  • a metal compound is a compound containing a metal atom and atoms other than the metal atom.
  • the metal compound examples include metal oxides, metal carbonates, metal carboxylates and metal complexes.
  • the metal compound is preferably a metal oxide.
  • the metal oxide is sintered after becoming metal particles by heating at the time of connection in the presence of a reducing agent.
  • the metal oxide is a precursor of metal particles.
  • the metal carboxylate particles include metal acetate particles.
  • the metal of the first raw material is gold, silver, tin, copper, germanium, indium, palladium, tellurium, thallium, bismuth, zinc, arsenic, selenium, and an alloy containing at least one of these metal elements
  • the average particle diameter can be 10 nm or more and 10 ⁇ m or less.
  • the first raw material may include two or more kinds having different average particle diameters, and in this case, the bonding strength of the sintered material can be improved.
  • the average particle diameter of metal particles having a small average particle diameter can be 10 nm or more and 100 nm or less, and the average particle diameter of metal particles having a large average particle diameter can be 1 ⁇ m or more and 10 ⁇ m or less.
  • the ratio of the blending amount of the first raw material with a larger average particle diameter to the first raw material with a smaller average particle diameter can be 1/9 or more and 9 or less.
  • the said average particle diameter is calculated
  • the first raw material may contain other components as necessary.
  • other components include thermoplastic resins and curable resins.
  • the curable resin include known photocurable resins and thermosetting resins.
  • the photocurable resin may include a photocurable resin and a photopolymerization initiator.
  • the thermosetting resin may include a known thermosetting resin and a thermosetting agent.
  • the first raw material may contain a dispersion medium.
  • the dispersion medium include known solvents.
  • a commercially available product may be used as the first raw material.
  • Specific examples include “CT2700” manufactured by Kyocera Chemical Co., “ASP295”, “ASP016”, “ASP043” manufactured by Heraeus, “LOCTITE ABLESTIK SSP2020” manufactured by Henkel, “H9890-6A” manufactured by NAMICS, and manufactured by Harima Chemicals. “NH-4000”, “NH-225D”, “NH-3000D”, “CM-3212”, “CR-3520” manufactured by Kaken Tech, “Arconano silver paste ANP-1” manufactured by Nippon Superior, etc. It is done.
  • the buffer 2 is not empty, use the second raw material.
  • the second raw material a material that is not the same as the first raw material can be used.
  • a 2nd raw material it is the same as that of the material for forming the buffer part 2 mentioned above.
  • the second raw material is a metal, it means that the metal element is a different type of metal element from the metal contained in the second raw material.
  • the sintering time can be, for example, 30 seconds or more and 7200 seconds or less. As will be described later, when sintering is performed under pressure, the sintering time is preferably 180 seconds or more and 600 seconds or less. When sintering is not performed under pressure, the sintering time is preferably 180 seconds or more and 5400 seconds or less. Note that the sintering time may be adjusted according to the sintering temperature. For example, if the sintering time is shortened by increasing the temperature, the production efficiency is excellent.
  • Sintering may be performed under pressure.
  • the pressure can be 0.1 to 20 MPa.
  • Sintering may be performed in an air atmosphere or an inert gas atmosphere such as nitrogen.
  • sinter in a state where the bonding composition is applied on a metal plate.
  • An example of the metal plate is a copper substrate.
  • the application method is, for example, a screen printing method.
  • sintering may be performed in a state where another metal plate is placed on the surface of the bonding composition applied with the screen and the bonding composition is sandwiched.
  • the presence of the third raw material that is, the raw material that becomes the filling portion 3) causes the buffer portion 2 (for example, empty Holes) are less likely to be unevenly distributed in the sintered body and easily dispersed uniformly.
  • the buffer portion 2 for example, empty Holes
  • a sintered material for measuring the kurtosis B that is, a sintered material from which the filling portion 3 has been removed (hereinafter sometimes referred to as “blank sintered material”) is manufactured, for example, as follows. Can do.
  • a blank sintered material can be obtained by removing the third raw material from the aforementioned bonding composition and then sintering.
  • the type and amount of the first raw material, the second raw material, and the sintering conditions are set to the same conditions as the method for obtaining the sintered material for measuring the kurtosis A.
  • the third raw material removal method include a method of taking a bonding composition, observing it with an optical microscope, removing it with a glass capillary, and removing it by centrifugation. .
  • a blank sintered material can be obtained by sintering using a bonding composition that does not include the third raw material.
  • the first raw material, the type and amount of the second raw material, and the sintering conditions are set to the same conditions as the method for obtaining the sintered material for measuring the kurtosis A.
  • the bonding composition of the present invention is a composite having a structure in which a colloidal catalyst or a sintering accelerator is disposed on the aforementioned base material, or a composite having a structure in which a metal part is coated on the base material, It is preferable that metal particles are included. That is, in the bonding composition, it is preferable that the first raw material contains the metal particles and the third raw material contains the composite. In this case, monodispersion of the buffer portion 2 is easily achieved, the volume distribution of the base portion 1 is easily adjusted to an appropriate range, and the kurtosis A of the sintered material is increased.
  • preferable aspects, such as a 1st raw material, a 3rd raw material, and its mixing ratio, are as above-mentioned.
  • the bonding composition of the present invention is sintered to form a sintered material
  • A> B can be satisfied.
  • the sintered material of such a bonding composition can have a value of A of 0.2 or more.
  • connection structure is not particularly limited. For example, various semiconductor devices (power devices) are mentioned.
  • the structure of the connection structure can also be the same as that known, for example.
  • the composite is suitable as an additive (buffer part distribution regulator) for forming the filled part of the sintered material. That is, the composite (for example, composite particles) is suitable for use for distributing the base portion 1 and the buffer portion 2, and is suitable for use for manufacturing a sintered material.
  • the composite for example, composite particles
  • an electroless copper plating solution a mixed solution containing 250 g / L of copper sulfate, 150 g / L of ethylenediaminetetraacetic acid, 100 g / L of sodium gluconate, and 50 g / L of formaldehyde is adjusted to pH 10.5 with ammonia.
  • a plating solution (C) was prepared.
  • a silver plating solution (D) prepared by adjusting a mixed solution containing silver nitrate 30 g / L, succinimide 100 g / L, and formaldehyde 20 g / L to pH 8.0 with aqueous ammonia is prepared. did.
  • the particle mixture liquid (E) was filtered to take out the particles and washed with water to obtain particles in which the copper metal part was disposed on the surface of the base particle A.
  • the particles were sufficiently washed with water, and then added to 500 parts by weight of distilled water and dispersed to obtain a particle mixture (F).
  • the silver plating solution (D) was gradually added dropwise to the dispersed particle mixture (F) adjusted to 60 ° C. to perform electroless silver plating.
  • the dropping rate of the silver plating solution (D) was 10 mL / min, the dropping time was 30 minutes, and electroless silver plating was performed.
  • the particles are taken out by filtration, washed with water, and dried to form a metal part (total thickness of metal part: 0.1 ⁇ m) in which copper and silver are laminated in this order on the surface of the base particle A.
  • a composite particle A provided was obtained.
  • the first raw material 0.98 g of silver paste (“Arconano silver paste ANP-1” manufactured by Nippon Superior Co., Ltd.) and 0.02 g of the composite particles A were kneaded with a spatula so as to be well dispersed and joined.
  • a composition was prepared.
  • the kneaded bonding composition was screen-coated on a 1 mm thick Cu substrate to a thickness of 100 ⁇ m, and the surface was sandwiched between 1 mm thick Cu substrates.
  • the sandwiched bonding composition was dried at 130 ° C. for 90 seconds in a nitrogen atmosphere, and then heated at 300 ° C. for 3 minutes while being pressurized at 5 MPa to obtain a sintered material.
  • the content of the composite particles was 2% by weight, and the closest distance between the composite particles was 3.52 ⁇ m.
  • the obtained sintered material was subjected to tomography by FIB-SEM method using “Helios 660” manufactured by FEI, and this image was reconstructed to obtain a three-dimensional image of the sintered material.
  • Observation conditions were an acceleration voltage of 2 kV, a reflected electron image, and a sample inclination of 52 °.
  • FIG. 2A shows the three-dimensional image obtained in Example 1, and shows the whole image and three tomographic images (cross-sectional images). Further, as shown in FIG. 2 (b), the three-dimensional image in FIG. 2 (a) is one of the 125 fractions of the sintered material.
  • the obtained sintered material showed three different contrasts, and it was confirmed that the base part 1, the buffer part 2 and the filling part 3 were formed.
  • the base 1 is a silver paste sintered body (silver sintered body), and the filler 3 is composite particles.
  • the buffer portion 2 is a hole.
  • the volume of each of the obtained 125 fractions was calculated using “AVIZO” manufactured by FEI to calculate the volume of the base 1, the buffer 2 and the filler 3, and the kurtosis A was calculated from the volume distribution. However, it was 0.97.
  • a bonding composition having a composition in which composite particles were removed from the bonding composition of Example 1 was prepared and used as a bonding composition for kurtosis B measurement.
  • the obtained composition for bonding kurtosis B was screen-coated on a 1 mm thick Cu substrate to a thickness of 100 ⁇ m, and the surface was sandwiched between 1 mm thick Cu substrates.
  • the sandwiched bonding composition was dried at 130 ° C. for 90 seconds in a nitrogen atmosphere, and then heated at 300 ° C. for 3 minutes while being pressurized at 5 MPa to obtain a sintered material.
  • the kurtosis B of this sintered material was measured by the same method as that for kurtosis A, it was 0.52.
  • FIG. 3 schematically shows a measuring apparatus for measuring the relaxation effect of thermal stress and the bonding strength.
  • cylindrical copper (10 mm diameter and 5 mm thickness) was used as the substrate 100.
  • One of the bonding compositions obtained in each of the examples and comparative examples was applied on the substrate 100 to form a paste layer (5 mm diameter and 50 ⁇ m thickness).
  • a copper disk chip 101 (5 mm diameter and 2 mm thickness) is placed on the paste layer and sintered at 300 ° C. for 3 minutes while being pressurized at 5 MPa, whereby the substrate 100 and the chip 101 are sintered. It joined by.
  • the work done and the bond strength were measured.
  • the work subjected to thermal stress can be measured by calculating the integrated value from the start of displacement to the breaking point in the stress-strain curve, and indicates the amount of energy absorbed before breaking.
  • the joint strength is a stress value at the breaking point in the stress-strain curve.
  • Example 2 A joining composition was prepared in the same manner as in Example 1 except that the silver paste as the first raw material was changed to 0.99 g and the composite particles A were changed to 0.01 g. The content of the composite particles was 1% by weight.
  • a sintered material was produced from the obtained bonding composition in the same manner as in Example 1, and the kurtosis A, kurtosis B, work subjected to thermal stress, elongation at break and bonding strength of the sintered material were determined. Each was measured by the same method as described above.
  • Example 3 A joining composition was prepared in the same manner as in Example 1, except that the silver paste as the first raw material was changed to 0.90 g and the composite particle A was changed to 0.10 g. The content of the composite particles was 10% by weight.
  • a sintered material was produced from the obtained bonding composition in the same manner as in Example 1, and the kurtosis A, kurtosis B, work subjected to thermal stress, elongation at break and bonding strength of the sintered material were determined. Each was measured by the same method as described above.
  • Example 4 A bonding composition was prepared in the same manner as in Example 1 except that the silver paste as the first raw material was changed to 0.98 g of resin-containing silver paste “CT2700” manufactured by Kyocera Chemical Co., Ltd. The content of the composite particles was 2% by weight.
  • the obtained bonding composition was screen-coated on a 1 mm thick Cu substrate to a thickness of 100 ⁇ m, and the surface was sandwiched between 1 mm thick Cu substrates. The sandwiched composition was heated at 200 ° C. for 90 minutes to obtain a sintered material. The sintered material was measured for kurtosis A, kurtosis B, thermal stressed work, elongation at break, and bonding strength by the same methods as described above.
  • Example 5 A joining composition was prepared in the same manner as in Example 1, except that 0.02 g of “L-MWNT-4060 (manufactured by NTP)” was used as the fiber instead of the composite particle A. The fiber content was 2% by weight.
  • a sintered material was produced from the obtained bonding composition in the same manner as in Example 1, and the kurtosis A, kurtosis B, work subjected to thermal stress, elongation at break and bonding strength of the sintered material were determined. Each was measured by the same method as described above.
  • Example 2 Only the silver paste (“CT2700” manufactured by Kyocera Chemical Co., Ltd.) as the first raw material was used as the bonding composition.
  • a sintered material was produced from the obtained bonding composition in the same manner as in Example 1, and the kurtosis A, kurtosis B, work subjected to thermal stress, elongation at break and bonding strength of the sintered material were determined. Each was measured by the same method as described above.
  • Table 1 shows the results of evaluation of the kurtosis A, kurtosis B, work subjected to thermal stress, elongation at break, and bonding strength of the sintered materials prepared using the bonding compositions obtained in the examples and comparative examples. It is a summary.
  • Base part 2 Buffer part 3: Filling part

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Abstract

熱応力及び接合強度の両方に優れる焼結材料、この焼結材料を備える接続構造体、焼結材料を製造することができる接合用組成物及び焼結材料の製造方法を提供する。 焼結材料において、基部1と、緩衝部2と、充填部3とを備える。緩衝部2及び充填部3は、基部1中に分散して存在している。基部1は、金属の焼結体であり、緩衝部2は空孔及び前記焼結体と同一でない材料の少なくともいずれか一方により形成され、充填部3は粒子及び繊維の少なくともいずれか一方により形成される。焼結材料の三次元画像における前記緩衝部の体積分布の尖度をA、充填部を除去した前記焼結材料の三次元画像における緩衝部の体積分布の尖度Bとしたときに、A>Bを満たす。

Description

焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法
 本発明は、焼結材料及び該焼結材料を接続部に有する接続構造体、複合粒子、接合用組成物、並びに焼結材料の製造方法に関する。
 従来、インバータ等に用いられるパワー半導体装置(パワーデバイス)の一つである非絶縁型半導体装置(接続構造体)において、半導体素子を固定するために、接続部材が使用されることが知られている。このような接続部材は、例えば、硬化性の接着剤又は焼結性材料等から形成することができ、接着部材の材料の種類によっては、半導体装置の電極の一つともなり得る。
 例えば、特許文献1,2は、半導体素子を固定するための接続部材として、空孔率を調整した焼結材料を利用することを開示している。このような焼結材料を半導体素子の接続部材として適用することで、放熱性及び接合強度が確保され得る。
特開2011-77225号公報 特開2014-96545号公報
 しかしながら、特許文献1,2等に開示される空孔を有する焼結材料を接続部材として利用する場合、空孔は熱応力を緩和する作用を有する半面、強度を低下させる要因になる。そのため、例えば、特許文献2に開示のように(段落[0012])、気孔率の低い緻密層を別に設ける必要があったため、接続部材を得る工程が複雑になり、また、気孔率の低い緻密層の存在により、熱応力を緩和する作用の低下が起こるという問題があった。このように、従来の接続部材としての焼結材料では、熱応力を緩和する作用及び接合強度を両立させることが困難であり、高出力特性が要求される半導体デバイスに使用するには、依然として改善の余地が残されていた。
 本発明は、上記に鑑みてなされたものであり、熱応力を緩和する作用及び接合強度の両方に優れる焼結材料、この焼結材料を備える接続構造体、複合粒子、焼結材料を製造するための接合用組成物及び焼結材料の製造方法を提供することを目的とする。
 本発明者らは、上記目的を達成すべく鋭意研究を重ねた結果、焼結材料中において応力緩和作用を発揮する緩和部(空孔等)の分布状態を制御することにより、上記目的を達成できることを見出し、本発明を完成するに至った。
 すなわち、本発明は、例えば、以下の項に記載の発明を包含する。
項1.焼結材料において、
 基部と、緩衝部と、充填部とを備え、
 前記基部は、金属の焼結体であり、
 前記緩衝部及び充填部は、前記基部中に分散して存在しており、
 前記緩衝部は、空孔、及び、前記焼結体と同一でない材料の少なくともいずれか一方により形成され、
 前記充填部は、粒子及び繊維の少なくともいずれか一方により形成され、
 前記焼結材料の三次元画像における前記基部の体積分布の尖度をA、前記充填部を除去した前記焼結材料の三次元画像における基部の体積分布の尖度Bとしたときに、A>Bを満たす、焼結材料。
項2.焼結材料において、
 基部と、緩衝部と、充填部とを備え、
 前記基部は、金属の焼結体であり、
 前記緩衝部及び充填部は、前記基部中に分散して存在しており、
 前記緩衝部は、空孔、及び、前記焼結体とは同一でない材料の少なくともいずれか一方により形成され、
 前記充填部は、粒子及び繊維の少なくともいずれか一方により形成され、
 前記焼結材料の三次元画像における前記基部の体積分布の尖度をAとしたときに、Aの値が0.2以上である、焼結材料。
項3.A-Bの値が0.1以上である、項1に記載の焼結材料。
項4.前記充填部の含有量が0.01重量%以上10重量%以下である、項1~3のいずれか1項に記載の焼結材料。
項5.前記充填部どうしの最近接距離が1μm以上10μm以下である、項1~4のいずれか1項に記載の焼結材料。
項6.前記基部は、一次元方向に配向性を有するように分布して存在している、項1~5のいずれか1項に記載の焼結材料。
項7.項1~6のいずれか1項に記載の焼結材料を接続部に有する接続構造体。
項8.項1~7のいずれか1項に記載の焼結材料の充填部を形成するために用いられ、 基材粒子にコロイド触媒又は焼結促進剤が配置された構造、若しくは、基材粒子に金属部が被覆された構造を有する、複合粒子。
項9.基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材に金属部が被覆された構造を有する複合体と、金属粒子とを含む接合用組成物において、
 前記接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度をA、前記複合体を除去した接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度Bとしたときに、A>Bを満たす、接合用組成物。
項10.基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材に金属部が被覆された構造を有する複合体と、金属粒子とを含む接合用組成物において、
 前記接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度をAとしたときに、Aの値が0.2以上である、接合用組成物。
項11.項9又は10に記載の接合用組成物を焼結する工程を含む、焼結材料の製造方法。
 本発明に係る焼結材料によれば、熱応力の緩和作用及び接合強度の両方に優れる。このため、本発明に係る焼結材料は、例えば、半導体素子を接合するための接合部材として好適である。
 本発明に係る複合粒子は、前記焼結材料を得るための原料として好適に使用でき、特に前記焼結材料の充填部を形成するために用いられる原料として好適である。
本発明の焼結材料の実施形態の一例を示し、その断面を示す模式図である。 (a)は、実施例1で得られた三次元画像、(b)は焼結材料を125分画したうちの一つの分画を説明する図である。 熱応力の緩和作用及び接合強度を測定するための測定装置の模式図である。
 以下、本発明の実施形態について詳細に説明する。
 図1は、本発明の焼結材料の断面を示す模式図である。なお、本発明では、焼結材料とは、焼結によって形成された生成物を意味する。
 本実施形態の焼結材料は、基部1と、緩衝部2と、充填部3とを備える。図1に示すように、緩衝部2及び充填部3は、基部1中に分散して存在している。なお、念のための注記に過ぎないが、緩衝部2及び充填部3は、焼結材料中に分散して存在していると表現してもよい。
 基部1は、金属の焼結体であり、焼結材料の母体となる部分である。
 緩衝部2は、空孔、及び、前記焼結体とは同一でない材料の少なくともいずれか一方により形成される。一般的に、焼結材料は、空孔を有するが、本発明の焼結材料は、空孔を有する場合もあれば、この空孔の一部または全部が、前記焼結体とは同一でない材料が充填される場合もある。焼結材料に存在する緩衝部2は、空孔のみで形成され得る。あるいは、焼結材料に存在する緩衝部2は、前記焼結体と同一でない材料のみで形成され得る。また、焼結材料は、空孔で形成される緩衝部2と、前記焼結体と同一でない材料で形成される緩衝部2との両方を有することもできる。
 緩衝部2は、焼結材料中に複数形成され、複数の緩衝部2はそれぞれ凝集せずに独立に存在することができる。あるいは、複数の緩衝部2の一部又は全部が焼結材料中で互いに連なって(連通して)存在することもできる。
 充填部3は、粒子及び繊維の少なくともいずれか一方により形成される。充填部3は、焼結材料中に複数形成されている。複数ある充填部3のうちの一部が粒子で形成され、残りは繊維で形成される態様もあり得る。
 複数の充填部3はそれぞれ凝集せずに独立して焼結材料中に点在することができるし、一部が凝集して存在することもできる。緩衝部2が分散して存在しやすいという観点から、充填部3は、凝集せずに均一に分散して焼結材料中に存在していることが好ましい。
 充填部3は、その表面の一部又は全体が基部1(焼結体)と接触するように存在している。充填部3と基部1の焼結体とは、例えば、化学結合をして接触し得る。このような化学結合の種類は限定的ではない。例えば、充填部3を形成する粒子及び/又は繊維が、後記するように充填部3の表面に金属を有している場合、前記化学結合は、金属結合となり得る。この場合、その金属と、基部1を構成する金属とが固溶体を形成していてもよい。これにより、充填部3が凝集せずに均一に分散して焼結材料中に存在しやすくなる。
 本発明の焼結材料は、図1に示すような構造を有し得る。特に、本発明の焼結材料は、後記2種類の形態に分類することができる。以下、2種類の形態の焼結材料をそれぞれ、第1の実施形態、第2の実施形態という。
 第1の実施形態の焼結材料は、当該焼結材料の三次元画像における前記基部1の体積分布の尖度をA、前記充填部3を除去した前記焼結材料の三次元画像における基部1の体積分布の尖度Bとしたときに、A>Bを満たす。
 第2の実施形態の焼結材料は、当該焼結材料の三次元画像における前記基部1の体積分布の尖度をAとしたときに、Aの値が0.2以上である。
 焼結材料の三次元画像は、焼結材料の断面を走査型電子顕微鏡(SEM)観察し、これを市販の三次元画像解析ソフトで解析することで得ることができる。焼結材料の断面観察にあたっては、焼結材料を複数箇所で切断して、各断面を走査型電子顕微鏡(SEM)で観察する。この切断は、微細な間隔とし、詳しくは焼結材料の緩衝部2や充填部3の大きさに応じて適宜設定される。前記間隔が小さいほど、正確な三次元画像が得られる。好ましい前記間隔は、400nm以下であり、さらに好ましくは200nm以下である。三次元画像を得る具体的方法としては、FEI製「Helios660」を用いたFIB-SEM法にて、上記のように焼結材料の各断面の撮影を行い、得られたSEM画像を、三次元画像を上記ソフトで再構築することで三次元画像を得ることができる。3次元画像の再構築は、例えば、FEI社製「AVIZO」等のソフトを用いて行うことができる。
 得られた三次元画像に基づいて、基部1の体積分布の尖度A(以下、単に「尖度A」と略記する)を次の手順で計測することができる。
 まず、上記のように得られた焼結材料の三次元画像をさらに125個に均等に分割(125分画)する。例えば、焼結材料が立方体であれば、この立方体をさらに125個の立方体に分画する(後記図2(b)を参照)。このように得た各分画のそれぞれにおいて、基部1、緩衝部2及び充填部3を観察して、それぞれの体積を計測する。この体積の計測は、例えば、FEI社製「AVIZO」を用いて行うことができる。
 前記125分画それぞれの基部1の体積に基づいて体積分布を作成し、この体積分布から尖度Aを算出する。体積分布及び尖度Aは、市販の計算ソフト、例えばMicrosoft社製「Excel2013」を用いて算出することができる。
 以上のようにして、焼結材料の三次元画像における基部1の体積分布の尖度(尖度A)を計測することができる。
 日本工業規格(JIS)では、尖度は「とがり(kurtosis)」として、平均値まわりの4次のモーメントμと標準偏差σの4乗の比μ/σで定義される。尖度は、確率変数の確率密度関数や頻度分布の鋭さを表す指標である。尖度が大きければ、正規分布と比べて鋭いピークと長く太い裾をもった分布となり、尖度が小さければ、正規分布と比べてより丸みがかったピークと短く細い尾をもった分布となる。
 基部1、緩衝部2及び充填部3はそれぞれ異なる成分で形成されていることから、焼結材料の三次元画像では、基部1、緩衝部2及び充填部3のそれぞれが異なるコントラストで映し出される。よって、あらかじめ、基部1、緩衝部2及び充填部3を構成する成分が三次元画像でどのようなコントラストとなるかを確認しておくことで、三次元画像における基部1、緩衝部2及び充填部3を容易に判別することができる。
 充填部3を除去した前記焼結材料の三次元画像における基部1の体積分布の尖度B(以下、単に「尖度B」と略記する)についても、三次元画像に基づいて計測することができる。
 ここで、「充填部3を除去した焼結材料」とは、尖度Aを計測するための焼結材料において、充填部3だけを取り除いた焼結材料を意味する。従って、充填部3が存在しないことを除いては、尖度Aを計測するための焼結材料と、尖度Bを計測するための焼結材料とは同一である。
 尖度Bについても、尖度Aを計測する場合と同様の手順で計測することができる。つまり、焼結材料の三次元画像を獲得し、この三次元画像を125分画し、各分画の基部1の体積分布から基部1の尖度Bを計測できる。
 本発明の焼結材料では、尖度Aが尖度Bより大きい。これは、充填部3を備える焼結材料の方が、充填部3を備えない焼結材料よりも基部1の体積分布がより均一であることを意味する。つまり、充填部3を備える焼結材料は、充填部3を備えない焼結材料よりも基部1の体積分布がより均一であり、しかも、緩衝部2の大きさが単分散化されているということができる。
 従来、焼結材料の特性を把握する上において、基部1である焼結体の体積分布、及び、空孔等の欠陥に代表される緩衝部2の分布については何ら着目されていなかった。しかし、本願発明者らはそれらの体積分布に着目し、これがより均一に形成されていれば、焼結材料の熱応力の緩和作用及び接合強度の両方が優れることを見出している。
 さらに、本発明者らは、基部と充填部は化学結合を有することで熱応力に対しての緩和作用が生じやすくなることを見出した。
 なお、本明細書において、焼結材料の接合強度とは、焼結材料を、半導体素子等の対象部材を接合させる目的で使用した場合に、焼結材料と接合部材との接着強度を意味する。
 本発明では、焼結体(基部1)中に分散して存在している、特定材料で形成された充填部3が、緩衝部2を均一な体積分布で分散化させていると考えられる。つまり、充填部3は、緩衝部2の分布を調節できる作用を有すると考えられる。
 第1の実施形態の焼結材料では、尖度Aと尖度Bとの差(A-Bの値)は、0.1以上であり、特に、0.2以上であることが好ましい。この場合、焼結材料の熱応力の緩和作用及び接合強度の両方がさらに優れる。
 第2の実施形態の焼結材料では、尖度Aの値は0.2以上であり、好ましくは0.3以上であり、より好ましくは0.4以上であり、特に好ましくは0.5以上である。この場合、焼結材料の熱応力及び接合強度の両方がさらに優れる。尖度Aの値の上限は、大きいほど好ましいが、通常、125である。
 本発明の焼結材料は、充填部3の含有量が、焼結材料の総重量に対して0.01重量%以上10重量%以下であることが好ましい。この場合、尖度Aを大きくしやすく、焼結材料の熱応力の緩和作用及び接合強度の両方がさらに優れる。充填部3の含有量は、焼結材料の総重量に対して5重量%以下であることがより好ましい。
 本発明の焼結材料において、充填部3どうしの最近接距離は、1μm以上10μm以下であることが好ましい。この場合、尖度Aの値をより大きくすることができ、焼結材料の熱応力の緩和作用及び接合強度の両方がさらに一層優れる。
 充填部3どうしの最近接距離は、前述と同様の方法で得た三次元画像から、50組の隣り合う一対の充填部3を選択して各々の最表層間の距離をそれぞれ測定し、それらのうち距離が短かった順に10組を選択し、この10組の距離を平均することで計測される。一対の充填部3の最表層どうしの距離の測定には、例えば、FEI製「AVIZO」を用いることができる。
 本発明の焼結材料において、基部1が一次元方向に配向性を有するように分布して存在していることが好ましい。この場合、焼結材料の熱応力の緩和作用及び接合強度の両方がさらに優れると共に、その一次元方向に対して直交する方向の熱応力の緩和作用及び接合強度も向上しやすいという利点を有する。一次元方向に対して直交する方向とは、例えば、焼結材料の面上の一方向に対して、その面上で直交する方向のことをいう。
 基部1を形成する金属の焼結体の種類は特に限定されない。焼結体を形成する金属は、焼結体を形成するために用いられている公知の金属と同様とすることができる。例えば、金属として、金、銀、錫、銅、ゲルマニウム、インジウム、パラジウム、テルル、タリウム、ビスマス、亜鉛、ヒ素、セレン及びこれらの金属元素のうちの少なくとも1種の金属元素を含む合金からなる群より選ばれる1種以上を挙げることができる。これらの中でも、金、銀及び銅からなる群より選ばれる1種以上を含むことが好ましく、この場合、緩衝部2がより均一に分散しやすい。
 緩衝部2が、焼結体とは同一でない材料で形成されている場合、その材料の種類は特に限定されない。例えば、緩衝部2を形成する材料は、金属、樹脂、有機物、無機物、ガラス、セラミックス等を挙げることができる。緩衝部2が金属である場合は、焼結体を構成する金属とは異なる種類の金属元素であることを意味する。緩衝部2としては、樹脂、有機物(樹脂を除く)、無機物、ガラス、セラミックス等が好ましい。
 緩衝部2は、焼結材料の製造が容易であり、かつ、焼結材料を軽量化できるという観点からは、空孔であることが好ましい。
 充填部3が粒子で形成されている場合、粒子の種類は特に限定されない。粒子としては、樹脂粒子、金属粒子を除く無機粒子、有機無機ハイブリッド粒子及び金属粒子等が挙げられる。
 特に、充填部3は、基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材に金属部が被覆された構造を有する複合体であることが好ましい。さらに、基材は粒子であることが好ましく、この場合、複合体は「複合粒子」ということができる。また、基材が粒子である場合を、「基材粒子」と記載する。
 充填部3が前記複合体で形成されている場合、複合体の表面に存在するコロイド触媒、焼結促進剤又は金属部により、充填部3と、焼結体である基部1との親和性が高まり、特に充填部3と、焼結体である基部1との化学結合が生じやすい。これにより、焼結材料中に充填部3がより均一に分散しやすい。その結果、緩衝部2も焼結材料中に均一に分散(単分散化)しやすくなり、尖度Aがより大きくなって、焼結材料の熱応力の緩和作用及び接合強度の両方を特に向上させることができる。また、充填部3と基部1との親和性が高まるため、充填部3の基部1との接触面積が大きくなる。その結果、充填部3と基部1の間にボイドが生じにくくなり、焼結材料の熱応力の緩和作用及び接合強度の両方を特に向上させることができる。複合体は、複合粒子であることが特に好ましい。
 基材は、樹脂、金属を除く無機物、有機無機ハイブリッド樹脂等を例示できる。基材が前記基材粒子である場合、例えば、樹脂粒子、金属粒子を除く無機粒子、有機無機ハイブリッド粒子及び金属粒子等が挙げられる。基材粒子は、樹脂粒子、金属粒子を除く無機粒子又は有機無機ハイブリッド粒子であることが好ましい。
 基材又は基材粒子が樹脂である場合、種々の有機物が好適に用いられる。そのような材料としては、例えば、ポリエチレン、ポリプロピレン、ポリスチレン、シリコーン樹脂、ポリ塩化ビニル、ポリ塩化ビニリデン、ポリイソブチレン、ポリブタジエン等のポリオレフィン樹脂;ポリメチルメタクリレート、ポリメチルアクリレート等のアクリル樹脂;ポリアルキレンテレフタレート、ポリスルホン、ポリカーボネート、ポリアミド、フェノールホルムアルデヒド樹脂、メラミンホルムアルデヒド樹脂、ベンゾグアナミンホルムアルデヒド樹脂、尿素ホルムアルデヒド樹脂、フェノール樹脂、メラミン樹脂、ベンゾグアナミン樹脂、エポキシ樹脂、飽和ポリエステル樹脂、不飽和ポリエステル樹脂、ポリフェニレンオキサイド、ポリアセタール、ポリイミド、ポリアミドイミド、ポリエーテルエーテルケトン、及び、ポリエーテルスルホン、尿素樹脂等が挙げられる。
 基材が樹脂粒子である場合、エチレン性不飽和基を有する種々の重合性単量体を1種もしくは2種以上重合させることにより得ることもできる。この場合、任意の物性を有する樹脂粒子を設計すること及び合成することが可能である。また、この場合、基材粒子の硬度を好適な範囲に容易に制御できる。このような観点から、上記樹脂粒子の材料は、エチレン性不飽和基を複数有する重合性単量体を1種又は2種以上重合させた重合体であることが好ましい。
 上記樹脂粒子を、エチレン性不飽和基を有する単量体を重合させて得る場合には、該エチレン性不飽和基を有する単量体としては、非架橋性の単量体及び/又は架橋性の単量体が挙げられる。なお、以下の説明において、「(メタ)アクリル」は「アクリル」と「メタクリル」との一方又は双方を意味し、「(メタ)アクリレート」は「アクリレート」と「メタクリレート」との一方又は双方を意味する。
 上記非架橋性の単量体としては、例えば、ビニル化合物として、スチレン、α-メチルスチレン、クロルスチレン等のスチレン系単量体;メチルビニルエーテル、エチルビニルエーテル、プロピルビニルエーテル、1,4-ブタンジオールジビニルエーテル、シクロヘキサンジメタノールジビニルエーテル、ジエチレングリコールジビニルエーテル等のビニルエーテル類;酢酸ビニル、酪酸ビニル、ラウリン酸ビニル、ステアリン酸ビニル等の酸ビニルエステル類;塩化ビニル、フッ化ビニル、等のハロゲン含有単量体;(メタ)アクリル化合物として、メチル(メタ)アクリレート、エチル(メタ)アクリレート、プロピル(メタ)アクリレート、ブチル(メタ)アクリレート、2-エチルヘキシル(メタ)アクリレート、ラウリル(メタ)アクリレート、セチル(メタ)アクリレート、ステアリル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、イソボルニル(メタ)アクリレート等のアルキル(メタ)アクリレート類;2-ヒドロキシエチル(メタ)アクリレート、グリセロール(メタ)アクリレート、ポリオキシエチレン(メタ)アクリレート、グリシジル(メタ)アクリレート等の酸素原子含有(メタ)アクリレート類;(メタ)アクリロニトリル等のニトリル含有単量体;トリフルオロメチル(メタ)アクリレート、ペンタフルオロエチル(メタ)アクリレート等のハロゲン含有(メタ)アクリレート類;α-オレフィン化合物として、ジイソブチレン、イソブチレン、リニアレン、エチレン、プロピレン等のオレフィン類;共役ジエン化合物として、イソプレン、ブタジエン等が挙げられる。
 上記架橋性の単量体としては、例えば、ビニル化合物として、ジビニルベンゼン、1,4-ジビニロキシブタン、ジビニルスルホン等のビニル系単量体;(メタ)アクリル化合物として、テトラメチロールメタンテトラ(メタ)アクリレート、テトラメチロールメタントリ(メタ)アクリレート、テトラメチロールメタンジ(メタ)アクリレート、トリメチロールプロパントリ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、ジペンタエリスリトールペンタ(メタ)アクリレート、グリセロールトリ(メタ)アクリレート、グリセロールジ(メタ)アクリレート、(ポリ)エチレングリコールジ(メタ)アクリレート、(ポリ)プロピレングリコールジ(メタ)アクリレート、(ポリ)テトラメチレングリコールジ(メタ)アクリレート、1,4-ブタンジオールジ(メタ)アクリレート等の多官能(メタ)アクリレート類;アリル化合物として、トリアリル(イソ)シアヌレート、トリアリルトリメリテート、ジアリルフタレート、ジアリルアクリルアミド、ジアリルエーテル;シリコーン化合物として、テトラメトキシシラン、テトラエトキシシラン、トリエチルシラン、t-ブチルジメチルシラン、メチルトリメトキシシラン、メチルトリエトキシシラン、エチルトリメトキシシラン、エチルトリエトキシシラン、イソプロピルトリメトキシシラン、イソブチルトリメトキシシラン、シクロヘキシルトリメトキシシラン、n-ヘキシルトリメトキシシラン、n-オクチルトリエトキシシラン、n-デシルトリメトキシシラン、フェニルトリメトキシシラン、ジメチルジメトキシシラン、ジメチルジエトキシシラン、ジイソプロピルジメトキシシラン、トリメトキシシリルスチレン、γ-(メタ)アクリロキシプロピルトリメトキシシラン、1,3-ジビニルテトラメチルジシロキサン、メチルフェニルジメトキシシラン、ジフェニルジメトキシシラン等のシランアルコキシド類;ビニルトリメトキシシラン、ビニルトリエトキシシラン、ジメトキメチルビニルシラン、ジメトキシエチルビニルシラン、ジエトキシメチルビニルシラン、ジエトキシエチルビニルシラン、エチルメチルジビニルシラン、メチルビニルジメトキシシラン、エチルビニルジメトキシシラン、メチルビニルジエトキシシラン、エチルビニルジエトキシシラン、p-スチリルトリメトキシシラン、3-メタクリロキシプロピルメチルジメトキシシラン、3-メタクリロキシプロピルトリメトキシシラン、3-メタクリロキシプロピルメチルジエトキシシラン、3-メタクリロキシプロピルトリエトキシシラン、3-アクリロキシプロピルトリメトキシシラン等の重合性二重結合含有シランアルコキシド;デカメチルシクロペンタシロキサン等の環状シロキサン;片末端変性シリコーンオイル、両末端シリコーンオイル、側鎖型シリコーンオイル等の変性(反応性)シリコーンオイル;(メタ)アクリル酸、マレイン酸、無水マレイン酸等のカルボキシル基含有単量体等が挙げられる。
 架橋性及び非架橋性単量体は、上記例示列挙した単量体に限定されず、その他の重合性単量体、例えば、公知の重合性単量体であってもよい。
 上記エチレン性不飽和基を有する重合性単量体を、公知の方法により重合させることで、上記樹脂粒子が得られる。この方法としては、例えば、ラジカル重合開始剤の存在下で懸濁重合する方法、及び非架橋の種粒子を用いてラジカル重合開始剤とともに単量体を膨潤させて重合する方法(いわゆる、シード重合法)等が挙げられる。これらの重合方法の条件は特に制限されず、公知の条件とすることができる。
 上記基材が金属粒子を除く無機又は有機無機ハイブリッド樹脂である場合には、基材の材料である無機物としては、シリカ及びカーボンブラック等が挙げられる。この無機物は金属ではないことが好ましい。上記シリカは特に限定されないが、例えば、加水分解性のアルコキシシリル基を2つ以上有するケイ素化合物を加水分解して架橋重合体粒子を形成した後に、必要に応じて焼成を行うことにより得られる粒子が挙げられる。上記有機無機ハイブリッド樹脂としては、例えば、架橋したアルコキシシリルポリマーとアクリル樹脂とにより形成された有機無機ハイブリッド粒子等が挙げられる。基材粒子である場合は、金属粒子を除く無機粒子又は有機無機ハイブリッド樹脂粒子とすることができる。
 上記基材の材料の他例として、ポリロタキサンを含む樹脂が挙げられる。ポリロタキサンは、鎖状高分子が環状分子の開口部を貫通して形成されている構造をいう。ポリロタキサンの種類は特に限定されず、例えば、公知のポリロタキサンが挙げられる。基材粒子であれば、ポリロタキサンを含む粒子とすることができる。
 基材を構成する材料がポリロタキサンを含む樹脂である場合、ポリロタキサンは架橋体であることが好ましい。具体的には、ポリロタキサンにおける環状分子と他のポリロタキサンにおける環状分子とが高分子鎖で架橋された構造であることが好ましい。このような架橋ポリロタキサンであれば、基材の柔軟性が高くなるので、応力緩和効果が発揮されやすく、これにより、焼結材料を接続構造体に適用した場合に接続構造体のクラック及び反りの発生を抑制しやすくなる。このような架橋体であるポリロタキサンにあっても、その種類は特に限定されず、例えば、公知の架橋ポリロタキサンが挙げられる。
 上記ポリロタキサンは、例えば、公知の方法で製造され得る。例えば、重合性の官能基を有する環状分子を備えるポリロタキサンと、重合性単量体との混合物とを反応させることで、架橋構造を有するポリロタキサンが製造される。この反応は、例えば、公知の方法で行うことができる。
 重合性の官能基を有する環状分子を備えるポリロタキサンの種類は特に制限がない。具体例を挙げるとすれば、アドバンスト・ソフトマテリアルズ株式会社から市販されている、「セルム(登録商標)スーパーポリマーSM3405P」、「セルム(登録商標)キー・ミクスチャーSM3400C」、「セルム(登録商標)スーパーポリマーSA3405P」、「セルム(登録商標)スーパーポリマーSA2405P」、「セルム(登録商標)キー・ミクスチャーSA3400C」、「セルム(登録商標)キー・ミクスチャーSA2400C」、「セルム(登録商標)スーパーポリマーSA3405P」、「セルム(登録商標)スーパーポリマーSA2405P」等である。
 基材粒子の平均粒子径は、例えば、焼結材料における充填部3の優れた分散性を確保する観点から、0.1μm以上、50以下とすることができる。基材粒子の平均粒子径は、好ましくは1μm以上、より好ましくは3μm以上であり、また、好ましくは50μm以下、より好ましくは10μm以下である。
 上記でいう基材粒子の平均粒子径とは、形状が真球状である場合には直径を意味し、真球状以外の形状である場合には、最大径と最小径の平均値を意味する。そして、基材粒子の平均粒子径は、基材粒子を走査型電子顕微鏡で観察し、無作為に選択した50個の基材粒子の粒径をノギスで測定した平均値を意味する。なお、基材粒子が前述のように他の材料で被覆されている場合の平均粒子径は、その被覆層も含める。
 基材粒子の粒子径の変動係数(CV値)は、例えば、50%以下である。上記変動係数(CV値)は下記式で表される。
CV値(%)=(ρ/Dn)×100
ρ:粒子の粒子径の標準偏差
Dn:粒子の粒子径の平均値である。
 基材粒子のCV値は、緩衝部2を単分散化させやすいという観点から、好ましくは40%以下、より好ましくは30%以下である。基材粒子の粒子径のCV値の下限は特に限定されない。CV値は0%以上であってもよく、5%以上であってもよく、7%以上であってもよく、10%以上であってもよい。
 基材粒子の硬さは、例えば、10N/mm以上、3000N/mm以下とすることができる。焼結材料の熱応力の緩和作用及び接合強度の両方が向上しやすい観点からは、10%K値は、好ましくは100N/mm以上、より好ましくは1000N/mm以上、好ましくは2500N/mm以下、特に好ましくは2000N/mm以下である。
 ここでいう10%K値は、基材粒子を10%圧縮したときの圧縮弾性率である。以下のようにして測定できる。まず、微小圧縮試験機を用いて、円柱(直径50μm、ダイヤモンド製)の平滑圧子端面で、25℃、最大試験荷重20mNを60秒かけて負荷する条件下で基材粒子を圧縮する。このときの荷重値(N)及び圧縮変位(mm)を測定する。得られた測定値から、上記圧縮弾性率を下記式により求めることができる。
10%K値(N/mm)=(3/21/2)・F・S-3/2・R-1/2
F:粒子が10%圧縮変形したときの荷重値(N)
S:粒子が10%圧縮変形したときの圧縮変位(mm)
R:粒子の半径(mm)
 微小圧縮試験機は、フィッシャー社製「フィッシャースコープH-100」等が用いられる。なお、30%K値を求める場合も、粒子を30%圧縮変形させたときの上記各パラメータを求めることで算出できる。
 前記焼結促進剤又はコロイド触媒としては、金属微粒子やフラックス成分が挙げられる。
 前記金属微粒子としては、金、銀、白金、パラジウム、錫、銅、ゲルマニウム、インジウム、パラジウム、亜鉛、インジウム、亜鉛、イリジウム、ロジウム、ルテニウム、オスミウム及びこれらの合金等が挙げられる。前記金属微粒子は1種のみであってもよいし、2種以上を含んでもよい。
 前記金属微粒子を基材粒子表面上に配置する方法としては、例えば、下記(1)~(3)を挙げることができる。
(1)基材粒子の分散液中に、金属微粒子を添加し、前記基材粒子の表面に前記金属微粒子をファンデルワールス力により集積させ、付着させる方法。
(2)基材粒子を入れた容器に、金属微粒子を添加し、容器の回転等による機械的な作用により前記基材粒子の表面に前記金属微粒子を付着させる方法。
(3)基材粒子の分散液中に、金属ナノコロイドを添加し、前記基材粒子の表面に前記金属ナノコロイドを化学結合により集積させた後、還元剤により金属ナノコロイドを還元して金属化させることにより基材粒子の表面に金属微粒子を付着させる方法。
中でも、付着させる金属微粒子の量を制御しやすいという観点から、前記(1)の方法が好ましい。なお、基材粒子以外の基材であっても前記(1)~(3)の方法を採用することができる。
 前記金属微粒子の平均粒子径は、好ましくは1nm以上、より好ましくは5nm以上であり、好ましくは1000nm以下、より好ましくは500nm以下、さらに好ましくは100nm以下である。なお、前記金属微粒子が前記(3)の方法における金属ナノコロイドを用いる場合は、好ましくは1nm以上、より好ましくは5nm以上であり、好ましくは50nm以下、より好ましくは40nm以下、さらに好ましくは35nm以下である。前記金属微粒子の粒子径が上記下限以上及び上記上限以下であると、粒子と焼結体との接触面積が大きくなる。前記金属ナノコロイドの径は、最大径を意味する。前記金属微粒子の平均径は、透過型電子顕微鏡等で観察し無作為で抽出した100個の金属微粒子の最大径を平均することにより求められる。
 前記フラックス成分としては、公知のフラックスを挙げることができ、例えば、樹脂系フラックス、有機系フラックス、無機系フラックス等が挙げられる。樹脂系フラックスとしては、アビエチン酸、パラストリン酸、デヒドロアビエチン酸、イソピマール酸、ネオアビエチン酸、ピマール酸を主成分とするロジンが挙げられる。有機系フラックスとしては、脂肪族カルボン酸、芳香族カルボンが挙げられる。無機系フラックスとしては、臭化アンモニウムや塩化アンモニウムなどのハロゲン化物が挙げられる。前記フラックス成分は1種のみであってもよいし、2種以上を含んでもよい。基材粒子に配置されたフラックス成分により、焼結過程において焼結体表面上の酸化被膜が除去され、基材粒子表面で焼結反応が促進し、基材粒子と焼結体との接触面積が大きくなる。
 複合体が、金属部が被覆された基材である場合、基材の種類としては、基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体の場合と同様である。この場合も基材は基材粒子であってもよい。
 前記金属部は、金属を含む材料で形成される。該金属としては、例えば、金、銀、錫、銅、銅、ゲルマニウム、インジウム、パラジウム、テルル、タリウム、ビスマス、亜鉛、ヒ素、セレン、鉄、鉛、ルテニウム、アルミニウム、コバルト、チタン、アンチモン、カドミウム、ケイ素、ニッケル、クロム、白金、ロジウム等が例示される。金属部は、これらの各々の金属のいずれか1種のみであってもよいし、あるいは、2種以上を含んでもよい。また、金属部は、上記例示列挙した各々の金属のうちの2種以上の金属の合金であってもよい。
 金属部は、例えば、前記基材を被覆するように層状に形成され得る。この場合、金属部は、1つの層により形成されていてもよいし、あるいは、複数の層により形成されていてもよい。
 金属部の厚みは、例えば、0.5nm以上、好ましくは10nm以上とすることができ、また、10μm以下、好ましくは1μm以下、更に好ましくは500nm以下、特に好ましくは300nm以下とすることができる。金属部の厚みが上記下限以上及び上記上限以下であると、充填部3としての複合粒子が、基部1中により均一に分散しやすくなり、緩衝部2をより均一に分散させることが可能となる。
 基材粒子の表面上に金属部を形成する方法は特に限定されない。金属部を形成する方法としては、例えば、無電解めっきによる方法、電気めっきによる方法、物理的蒸着による方法、並びに金属粉末もしくは金属粉末とバインダーとを含むペーストを基材粒子の表面にコーティングする方法等が挙げられる。金属部の形成が簡便であるという観点から、無電解めっきによる方法が好ましい。上記物理的蒸着による方法としては、真空蒸着、イオンプレーティング及びイオンスパッタリング等の方法が挙げられる。
 金属部が多層構造である場合も同様の方法で金属部を形成することができる。例えば、上記の金属部の形成方法を採用することによって基材表面に第1層目の金属部を形成し、この第1層目の表面にさらに次の層を順次形成することで、多層構造の金属部を形成することができる。
 前記金属部は、外表面に複数の突起を有していてもよい。突起は、例えば公知の方法で形成することができる。突起の形状及び大きさは特に限定的されない。例えば、突起の断面が球状又は楕円形状であってもよいし、突起先端に向かうほど尖っていくような針状に形成されていてもよい。
 突起の平均高さは、1nm以上、1000nm以下とすることができ、好ましくは5nm以上、より好ましくは50nm以上、好ましくは900nm以下、より好ましくは500nm以下である。上記突起の平均高さが上記下限以上及び上記上限以下であると、複合体(例えば、複合粒子)が焼結体である基部1と接触しやすくなる。
 突起の平均高さは、例えば以下のように測定することができる。複合体(例えば、複合粒子)の含有量が30重量%となるように、Kulzer社製「テクノビット4000」に添加し、分散させて、複合体検査用埋め込み樹脂を作製する。その検査用埋め込み樹脂中の分散した複合体の中心付近を通るようにイオンミリング装置(日立ハイテクノロジーズ社製「IM4000」)を用いて、複合体の断面を切り出す。そして、電界放射型走査型電子顕微鏡(FE-SEM)を用いて、画像倍率5万倍に設定し、20個の複合体を無作為に選択し、それぞれの複合体の突起50個を観察する。突起の底面から突起の頂部までの高さを突起の高さとし、算術平均して上記突起の平均高さとする。
 突起底面の平均径は、3nm以上、5000nm以下とすることができ、好ましくは50nm以上、より好ましくは80nm以上、好ましくは1000nm以下、より好ましくは500nm以下である。ここでいう突起底面の平均径は、上記の突起の平均高さの測定方法と同様の手順で、埋め込み樹脂を用いたFE-SEM観察によって無作為に選択した20個の複合粒子の突起をそれぞれ観察し、各基部の両端間距離を計測し、それらを算術平均して求めた値をいう。
 複合体は、前記基材の表面の一部または全部にコロイド触媒又は焼結促進剤が配置された構造を有する。あるいは、複合体は、前記基材の表面の一部または全部に金属部が被覆された構造を有する。複合体が複合粒子である場合は、基材粒子の表面の一部または全部にコロイド触媒又は焼結促進剤が配置された構造を有する。あるいは、複合粒子は、前記基材の表面の一部または全部に金属部が被覆された構造を有する。
 複合粒子の他の形態として、凹部を有する基材粒子と、基材粒子の表面上に配置されたコロイド触媒又は金属部とを備えてもよい。この形態の複合粒子では、凹部にもコロイド触媒又は金属部が被覆され得る。
 凹部を有する基材粒子を調製する方法は特に限定されない。例えば、基材粒子を後処理することで、基材粒子に凹部を形成することができる。後処理による凹部の形成方法は特に限定的ではなく、例えば、公知の方法を採用することができる。具体的には、基材粒子の表面をエッチング処理する方法、酸素雰囲気でプラズマ処理、オゾン処理及び加熱処理をする方法、加湿処理する方法、真空中で熱処理する方法、加圧及び加湿条件下で熱処理する方法、酸化剤で湿式処理する方法、ボールミル等で物理的に処理する方法等が挙げられる。
 凹部の平均深さは特に限定されない。例えば、凹部の平均深さは、基材粒子の平均半径の0.1%以上、80%以下とすることができる。なお、ここでいう凹部の深さとは、凹部を有する基材粒子を球状と見立てて、その球状の基材粒子の表面から凹部の最も底面となる点との距離を示す。具体的には、上記の突起の平均高さの測定方法と同様の手順で、埋め込み樹脂を用いたFE-SEM観察によって無作為に選択した20個の複合粒子の突起をそれぞれ観察し、各凹部の深を算術平均して求めた値をいう。
 複合粒子が凹部を有する場合は、複合粒子が変形に対して追従しやすくなり、その結果、焼結材料の熱応力の緩和作用及び接合強度がより向上する。
 充填部3を形成するための粒子の形状は、特に限定されない。粒子の形状としては、例えば、例えば、球状、楕円状、不定形状、針状、棒状、板状、鱗片状等が挙げられる。充填部3が基部1に均一に分散しやすいという点では、粒子の形状としては球状又は楕円状が好ましい。また、前述のように、基部1が特定の一次元方向に配向性を有するように分布して存在しやすいという観点では、粒子の形状は、針状、棒状、板状であることが好ましい。
 充填部3を形成する粒子の平均粒子径は、例えば、焼結体である基部1における充填部3の分散性を確保する観点から、0.1μm以上、50μm以下とすることができる。粒子の平均粒子径は、好ましくは1μm以上、より好ましくは3μm以上であり、また、好ましくは10μm以下である。
 充填部3が繊維で形成されている場合、繊維の種類は特に限定されない。繊維としては、例えば、天然繊維、合成繊維の他、ガラス繊維、炭素繊維、岩石繊維が挙げられる。天然繊維は、セルロース、絹、綿、羊毛、麻が例示される。合成繊維は、ポリエチレンテフタレート等のポリエステル、ポリアミド、ポリイミド、アクリル、ポリオレフィン、ポリメチルペンテン、ポリアリレート、ポリアセタール、ポリフェニレンオキサイド、ポリサルホン、ポリエーテルエーテルケトン、ポリフェニレンサルファイドが例示される。
 上記構造を有する焼結材料を製造する方法は、特に制限されない。例えば、公知の方法で焼結材料を製造することが可能である。
 例えば、基部1を形成するための金属、緩衝部2を形成するための材料、充填部3を形成するための粒子及び/又は繊維を含む接合用組成物を焼結用原料とし、当該接合用組成物を焼結することで、焼結材料を得ることができる。なお、緩衝部2が空孔だけで形成される焼結材料を得る場合、接合用組成物は第2の原料を含まない。以下、基部1を形成するための金属を「第1の原料」、緩衝部2を形成するための材料を「第2の原料」、充填部3を形成するための粒子及び/又は繊維を「第3の原料」という。
 第1の原料は、基部1の焼結体を形成できる金属原料である限り特に制限はない。例えば、第1の原料は、金属粒子とすることができる。金属粒子は、金属単体の粒子であってもよいし、あるいは、金属化合物の粒子であってもよい。金属化合物は、金属原子と、該金属原子以外の原子とを含む化合物である。
 金属化合物の具体例としては、金属酸化物、金属の炭酸塩、金属のカルボン酸塩及び金属の錯体等が挙げられる。金属化合物は、金属酸化物であることが好ましい。例えば、上記金属酸化物は、還元剤の存在下で接続時の加熱で金属粒子となった後に焼結する。上記金属酸化物は、金属粒子の前駆体である。金属のカルボン酸塩粒子としては、金属の酢酸塩粒子等が挙げられる。
 第1の原料の金属は、金、銀、錫、銅、ゲルマニウム、インジウム、パラジウム、テルル、タリウム、ビスマス、亜鉛、ヒ素、セレン及びこれらの金属元素のうちの少なくとも1種の金属元素を含む合金からなる群より選ばれる1種以上が例示される。
 第1の原料が粒子形状である場合、その平均粒子径は、10nm以上、10μm以下とすることができる。また、第1の原料は、平均粒子径の異なる2種以上を含んでもよく、この場合、焼結材料の接合強度を向上させることができる。例えば、平均粒子径の小さい金属粒子の平均粒子径は10nm以上、100nm以下とし、平均粒子径の大きい金属粒子の平均粒子径は1μm以上、10μm以下とすることができる。平均粒子径の小さい方の第1の原料に対する、平均粒子径の大きい方の第1の原料との配合量の比は、1/9以上、9以下とすることができる。なお、上記平均粒子径は、金属粒子を走査型電子顕微鏡で観察し、観察された画像における任意に選択した50個の各粒子の最大径を算術平均することにより求められる。
 第1の原料が金属酸化物の粒子である場合は、還元剤を併用してもよい。還元剤としては、公知の還元剤を使用することができる。還元剤の含有量は、第1の原料100重量部に対して、好ましくは1重量部以上、より好ましくは10重量部以上であり、好ましくは1000重量部以下、より好ましくは500重量部以下、更に好ましくは100重量部以下である。上記還元剤の含有量が上記下限以上であると、緻密な焼結体が得られやすい。
 第1の原料には、必要に応じて他の成分が含まれていてもよい。他の成分としては、例えば、熱可塑性樹脂又は硬化性樹脂が挙げられる。硬化性樹脂としては、例えば、公知の光硬化性樹脂及び熱硬化性樹脂が挙げられる。光硬化性樹脂は、光硬化性樹脂及び光重合開始剤を含んでもよい。熱硬化性樹脂は、公知の熱硬化性樹脂及び熱硬化剤を含んでもよい。
 第1の原料には、分散媒が含まれていてもよい。分散媒としては、例えば、公知の溶剤等が挙げられる。
 第1の原料は、市販されている製品を使用してもよい。具体例としては、京セラケミカル社製「CT2700」、Heraeus社製「ASP295」、「ASP016」、「ASP043」、ヘンケル社製「LOCTITE ABLESTIK SSP2020」、ナミックス社製「H9890-6A」、ハリマ化成社製「NH-4000」、「NH-225D」、「NH-3000D」、化研テック社製「CM-3212」、「CR-3520」、日本スペリア社製「アルコナノ銀ペーストANP-1」等が挙げられる。
 第1の原料は、400℃未満の加熱で焼結する性質を有していることが好ましく、より好ましくは350℃以下、好ましくは300℃以上である。第1の原料の焼結する温度が上記上限以下又は上記上限未満であると、焼結を効率的に行うことができ、更に焼結に必要なエネルギーを低減し、かつ環境負荷を小さくすることができる。
 第1の原料は、1種類のみを使用することができ、あるいは、2種以上を併用して使用することもできる。
 緩衝部2が空孔でない場合は第2の原料を使用する。第2の原料は、第1の原料と同一でない材料を使用することができる。第2の原料としては、前述した緩衝部2を形成するための材料と同様である。第2の原料が金属である場合は、第2の原料に含まれる金属とは異なる種類の金属元素であることを意味する。
 第3の原料は、前述した充填部3を形成するための粒子及び/又は繊維と同様である。
 第3の原料は、前述の複合体を含むことが好ましいこの場合、得られた焼結材料において、充填部3と、焼結体である基部1との親和性が高まるため、焼結材料中に充填部3がより均一に分散しやすい。その結果、緩衝部2も焼結材料中に均一に分散(単分散化)しやすくなり、尖度Aがより大きくなって、焼結材料の熱応力の緩和作用及び接合強度の両方を特に向上させることができる。複合体が複合粒子であればさらに好ましい。
 第3の原料は、1種類のみを使用することができ、あるおは、2種以上を併用して使用することもできる。
 接合用組成物(焼結用原料)において、第1の原料、第2の原料、第3の原料の混合割合は特に限定されない。例えば、接合用組成物を用いて焼結材料を形成した場合に、充填部の含有量が0.01重量%以上10重量%以下となるように、第1の原料、第2の原料、第3の原料の含有量を調節することが好ましい。なお、本発明の効果が阻害されない限り、接合用組成物は、その他の原料を含むことができる。接合用組成物は、第1の原料、第2の原料、第3の原料のみで構成することもできる。
 接合用組成物を焼結させる方法は、特に限定されない。焼結温度は、100℃以上400℃以下とすることができる。後述するように、加圧下で焼結を行う場合、焼結温度は、150℃以上、350℃以下であることが好ましい。また、加圧下で焼結を行わない場合、焼結温度は、200℃以上、350℃以下であることが好ましい。
 焼結時間は、例えば、30秒以上7200秒以下とすることができる。後述するように、加圧下で焼結を行う場合、焼結時間は、180秒以上600秒以下が好ましい。また、加圧下で焼結を行わない場合、焼結時間は、180秒以上5400秒以下が好ましい。なお、焼結時間は焼結温度に応じて調整すればよく、例えば、より高温にして焼結時間を短くすれば、生産効率に優れる。
 焼結は、加圧下で行ってもよい。この場合の圧力は、0.1~20MPaとすることができる。
 焼結は、空気雰囲気で行ってもよいし、窒素等の不活性ガス雰囲気で行ってもよい。
 前述の三次元画像を観察しやすいという観点から、金属板上に接合用組成物を塗布した状態で、焼結することが好ましい。金属板としては、例えば、銅基板が挙げられる。塗布の方法は、例えば、スクリーン印刷法である。焼結する際、スクリーン塗布した接合用組成物の表面に、さらに他の金属板を載せて接合用組成物を挟み込んだ状態で焼結を行ってもよい。
 接合用組成物が焼結されて焼結体(基部1)が形成される過程において、第3の原料(つまり、充填部3となる原料)が存在することで、緩衝部2(例えば、空孔)が焼結体中に偏在しにくく、均一に分散しやすくなる。これにより、緩衝部2の単分散化が達成され、基部1の体積分布も適切な範囲に調整され、焼結材料の尖度Aが大きくなる。
 以上のように、接合用組成物を焼結する工程を含む製造方法によって、焼結材料を得ることができる。このように製造される焼結材料を、前述した手順に従うことで焼結材料の尖度Aを計測できる。
 一方、尖度Bを計測するための焼結材料、すなわち、充填部3を除去した焼結材料(以下、「ブランク焼結材料」ということがある)は、例えば、以下のように製造することができる。
 前述の接合用組成物から第3の原料を除去してから焼結することで、ブランク焼結材料を得ることができる。この場合は、第1の原料、第2の原料の種類及び使用量、並びに、焼結条件を、尖度Aを計測するための焼結材料を得る方法と同一の条件にする。なお、第3の原料の除去方法としては、例えば、接合用組成物を取り、その中から、光学顕微鏡で観察し、ガラスキャピラリーで除去する方法や、遠心分離により除去する方法を挙げることができる。あるいは、前述の焼結材料の製造方法において、第3の原料を含まない接合用組成物を使用して、焼結することでブランク焼結材料を得ることができる。この場合も、第1の原料、第2の原料の種類及び使用量、並びに、焼結条件を、尖度Aを計測するための焼結材料を得る方法と同一の条件にする。
 本発明の接合用組成物は、特に、前述の基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材を金属部が被覆した構造を有する複合体と、金属粒子とを含むことが好ましい。つまり、接合用組成物において、第1の原料が前記金属粒子、第3の原料が前記複合体を含んでいることが好ましい。この場合、緩衝部2の単分散化が達成されやすく、基部1の体積分布も適切な範囲に調整されやすくなって、焼結材料の尖度Aが大きくなる。なお、第1の原料、第3の原料とその混合割合等の好ましい態様は前述の通りである。
 本発明の接合用組成物は、焼結させて焼結材料を形成すると、A>Bを満たし得る。あるいは、このような接合用組成物の焼結材料は、Aの値が0.2以上になり得る。その結果、焼結材料の熱応力の緩和作用及び接合強度の両方がより優れるものとなり、例えば、半導体素子を接合するための接合部材として好適である。
 接合用組成物の焼結材料がA>Bを満たし得ること、又は、A≧0.2を満たし得ることを確認するには、接合用組成物を下記の条件で焼結することが行われる。
 まず、接合用組成物を、厚さ1mmのCu基板上に100μmの厚さになるようスクリーン塗布し、その表面を、厚さ1mmのCu基板で挟む。この挟み込んだ接合用組成物を130℃で90秒間、窒素雰囲気下で乾燥し、次いで、5MPaで加圧しながら、300℃で3分間、加熱する。これにより焼結材料が得られるので、この焼結材料を用いてAを計測できる。また、接合用組成物から前述の方法で第3の原料(複合体)を除去してBを測定するための組成物を調製し、この組成物を用いてAの計測と同じ方法を行うことでBを計測できる。
 本発明の焼結材料は、熱応力の緩和作用及び接合強度の両方がより優れる。そのため、本発明の焼結用材料は、接続構造体の接続部に適用できる。本発明の焼結用材料を接続部に有する接続構造体は熱応力の緩和作用に優れるので、耐久性に優れる構造体となる。特に、接続部が本発明の焼結用材料で形成される接合部材を含むので、接合強度にも優れる。
 接続構造体の種類は特に限定されない。例えば、各種の半導体デバイス(パワーデバイス)が挙げられる。接続構造体の構造も、例えば、公知と同様とすることができる。
 また、前記複合体は、焼結材料を形成するための添加剤として、特に有効である。前記複合体を充填部3として備える焼結材料は、焼結材料中に分散しやすいので、緩衝部2の均一分散化(単分散化)に寄与しやすいからである。複合体が複合粒子であることがより好ましい。
 従って、前記複合体は、前記焼結材料の充填部を形成するための添加剤(緩衝部分布調節剤)として好適である。つまり、前記複合体(例えば、複合粒子)は、基部1及び緩衝部2を分布させるための使用に適し、焼結材料を製造するための使用に適している。
 また、前記第1の原料、第2の原料及び第3の原料を含む接合用組成物を用いて焼結材料を得ることは、焼結材料に形成される基部1及び緩衝部2の分布状態を調節する方法としても好適である。
 以下、実施例により本発明をより具体的に説明するが、本発明はこれら実施例の態様に限定されるものではない。
 (実施例1)
 基材粒子として、粒子径が3.0μmであるジビニルベンゼン共重合体樹脂粒子(積水化学工業社製「ミクロパールSP-203」)を用意した。
 パラジウム触媒液5重量%を含むアルカリ溶液100重量部に、基材粒子A10重量部を、超音波分散器を用いて分散させた後、溶液をろ過することにより、基材粒子Aを取り出した。次いで、基材粒子Aをジメチルアミンボラン1重量%溶液100重量部に添加し、基材粒子Aの表面を活性化させた。表面が活性化された基材粒子Aを十分に水洗した後、蒸留水500重量部に加え、分散させることにより、懸濁液(A)を得た。
 懸濁液(A)を、硫酸銅20g/L、及びエチレンジアミン四酢酸30g/Lを含む溶液中に入れ、粒子混合液(B)を得た。
 また、無電解銅めっき液として、硫酸銅250g/L、エチレンジアミン四酢酸150g/L、グルコン酸ナトリウム100g/L、及びホルムアルデヒド50g/Lを含む混合液を、アンモニアにてpH10.5に調整した銅めっき液(C)を用意した。
 また、無電解銀めっき液として、硝酸銀30g/L、コハク酸イミド100g/L、及びホルムアルデヒド20g/Lを含む混合液を、アンモニア水にてpH8.0に調整した銀めっき液(D)を用意した。
 55℃に調整した分散状態の粒子混合液(B)に上記銅めっき液(C)を徐々に滴下し、無電解銅めっきを行った。銅めっき液(C)の滴下速度は30mL/分、滴下時間は30分間で、無電解銅めっきを行った。このようにして、樹脂粒子の表面に第1の金属部として銅金属部を備える粒子を含む粒子混合液(E)を得た。
 その後、粒子混合液(E)をろ過することにより、粒子を取り出し、水洗することにより、上記基材粒子Aの表面上に銅金属部が配置されている粒子を得た。この粒子を十分に水洗した後、蒸留水500重量部に加え、分散させることにより、粒子混合液(F)を得た。
 次に、60℃に調整した分散状態の粒子混合液(F)に上記銀めっき液(D)を徐々に滴下し、無電解銀めっきを行った。銀めっき液(D)の滴下速度は10mL/分、滴下時間は30分間で、無電解銀めっきを行った。その後、ろ過することにより粒子を取り出し、水洗し、乾燥することにより、基材粒子Aの表面上に銅及び銀がこの順に積層されてなる金属部(金属部全体の厚み:0.1μm)を備える複合粒子Aを得た。
 第1の原料である銀ペースト(日本スペリア社製「アルコナノ銀ペーストANP-1」)0.98gと、前記複合粒子Aを0.02gとを、よく分散するようスパーテルにて混練して、接合用組成物を調製した。
 混練した接合用組成物を厚さ1mmのCu基板上に100μmの厚さになるようスクリーン塗布し、その表面を、厚さ1mmのCu基板で挟み込んだ。この挟み込んだ接合用組成物を130℃で90秒間、窒素雰囲気下で乾燥し、次いで、5MPaで加圧しながら、300℃で3分間、加熱することで焼結材料を得た。焼結材料中、複合粒子の含有量は2重量%、複合粒子間の最近接距離は3.52μmであった。
 得られた焼結材料は、FEI製「Helios660を」を用い、FIB-SEM法にて断層撮影を行い、この画像を再構築して焼結材料の3次元画像を得た。観察条件としては、加速電圧を2kVで、反射電子像とし、試料傾斜を52°とした。
 図2(a)は、実施例1で得られた三次元画像を示しており、全体像及び三つの断層撮影像(断面像)を示している。また、図2(b)に示すように、図2(a)の三次元画像は、焼結材料を125分画したうちの一つの分画である。
 図2(a)に示されるように、得られた焼結材料には3種類の異なるコントラストが示されており、基部1、緩衝部2及び充填部3が形成されていることを確認した。基部1は銀ペーストの焼結体(銀焼結体)であり、充填部3は複合粒子である。また、本実施例では緩衝部2は空孔である。
 得られた125分画それぞれの基部1、緩衝部2、充填部3の体積をFEI社製「AVIZO」を用いて算出して、体積分布を作成し、この体積分布から尖度Aを算出したところ、0.97であった。
 一方、前記実施例1の接合用組成物から複合粒子を除去した配合の接合用組成物を準備し、尖度B測定用の接合用組成物とした。
 得られた尖度Bを測定用の接合用組成物を、厚さ1mmのCu基板上に100μmの厚さになるようスクリーン塗布し、その表面を、厚さ1mmのCu基板で挟み込んだ。この挟み込んだ接合用組成物を130℃で90秒間、窒素雰囲気下で乾燥し、次いで、5MPaで加圧しながら、300℃で3分間、加熱することで焼結材料を得た。この焼結材料の尖度Bを尖度Aと同様の方法で計測したところ、0.52であった。
 (熱応力の緩和作用及び接合強度評価)
 熱応力の緩和作用及び接合強度は、JIS Z 3198-7:鉛フリーはんだ試験方法-第7部 チップ部品のはんだ継手せん断 試験方法」に記載の「はんだ継手せん断試験方法」に基づいて評価した。
 図3は、熱応力の緩和作用及び接合強度を測定するための測定装置を模式的に示している。この測定では、基板100として円筒状の銅(10mm径で厚み5mm)を使用した。基板100上に各実施例及び比較例で得たいずれかの接合用組成物を塗布してペースト層(5mm径で厚み50μm)を形成した。そして、このペースト層上に銅製の円盤チップ101(5mm径で厚み2mm)を配置し、5MPaで加圧しながら、300℃で3分間焼結することで、基板100とチップ101とを焼結材料により接合した。これをシェア強度試験機105にセットし、チップ101及び接合部に対し、シェア速度6mm/minで荷重をかけ、変位と荷重との関係をグラフ化して応力-ひずみ曲線を得て、熱応力にされた仕事及び接合強度を計測した。熱応力にされた仕事は、応力-ひずみ曲線において変位が始まってから破断点までの積分値を算出することで計測でき、破断するまでに吸収するエネルギー量を示すものである。接合強度は、応力-ひずみ曲線において破断点の応力値である。
 実施例1の接合用組成物を用いて熱応力の緩和作用及び接合強度の評価をしたころ、熱応力にされた仕事は0.988J、接合強度は85.04MPaであり、従来よりも優れた熱応力の緩和作用及び接合強度を付与できていることがわかった。
 (実施例2)
 第1の原料である銀ペーストを0.99gに、前記複合粒子Aを0.01gに変更したこと以外は実施例1と同様の方法で接合用組成物を調製した。複合粒子の含有量は1重量%であった。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
 (実施例3)
 第1の原料である銀ペーストを0.90gに、前記複合粒子Aを0.10gに変更したこと以外は実施例1と同様の方法で接合用組成物を調製した。複合粒子の含有量は10重量%であった。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
 (実施例4)
 第1の原料である銀ペーストを、京セラケミカル社製の樹脂入り銀ペースト「CT2700」0.98gに変更したこと以外は実施例1と同様の方法で接合用組成物を調製した。複合粒子の含有量は2重量%であった。得られた接合用組成物を、厚さ1mmのCu基板上に100μmの厚さになるようスクリーン塗布し、その表面を、厚さ1mmのCu基板で挟み込んだ。この挟み込んだ接合用組成物を200℃で90分間、加熱することで焼結材料を得た。この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
 (実施例5)
 複合粒子Aの代わりに、繊維として「L-MWNT-4060(NTP社製)」を0.02g使用したこと以外は実施例1と同様の方法で接合用組成物を調製した。繊維の含有量は2重量%であった。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
 (比較例1)
 第1の原料である銀ペースト(日本スペリア社製「アルコナノ銀ペーストANP-1」)のみを接合用組成物とした。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
 (比較例2)
 第1の原料である銀ペースト(京セラケミカル社製「CT2700」)のみを接合用組成物とした。得られた接合用組成物を、実施例1と同様の方法で焼結材料を作製し、この焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度を、それぞれ前述の方法と同じ方法で測定した。
 表1は、各実施例及び比較例で得た接合用組成物を用いて作製した焼結材料の尖度A、尖度B、熱応力にされた仕事、破断伸び及び接合強度の評価結果のまとめである。
Figure JPOXMLDOC01-appb-T000001
 表1から、実施例2~5の接合用組成物を用いた場合であっても、従来よりも優れた熱応力の緩和作用及び接合強度(いずれも45MPa以上)を付与できていることがわかった。
 いずれの実施例においても優れた熱応力の緩和作用及び接合強度を付与できるのは、A>Bを満たす上に、さらに、充填部3(複合粒子A又は繊維)と基部1(銀焼結体)とが化学結合(例えば、金属結合)を形成していることに起因するといえる。
  1:基部
  2:緩衝部
  3:充填部

Claims (11)

  1.  焼結材料において、
     基部と、緩衝部と、充填部とを備え、
     前記基部は、金属の焼結体であり、
     前記緩衝部及び充填部は、前記基部中に分散して存在しており、
     前記緩衝部は、空孔、及び、前記焼結体と同一でない材料の少なくともいずれか一方により形成され、
     前記充填部は、粒子及び繊維の少なくともいずれか一方により形成され、
     前記焼結材料の三次元画像における前記基部の体積分布の尖度をA、前記充填部を除去した前記焼結材料の三次元画像における基部の体積分布の尖度Bとしたときに、A>Bを満たす、焼結材料。
  2.  焼結材料において、
     基部と、緩衝部と、充填部とを備え、
     前記基部は、金属の焼結体であり、
     前記緩衝部及び充填部は、前記基部中に分散して存在しており、
     前記緩衝部は、空孔、及び、前記焼結体とは同一でない材料の少なくともいずれか一方により形成され、
     前記充填部は、粒子及び繊維の少なくともいずれか一方により形成され、
     前記焼結材料の三次元画像における前記基部の体積分布の尖度をAとしたときに、Aの値が0.2以上である、焼結材料。
  3.  A-Bの値が0.1以上である、請求項1に記載の焼結材料。
  4.  前記充填部の含有量が0.01重量%以上10重量%以下である、請求項1~3のいずれか1項に記載の焼結材料。
  5.  前記充填部どうしの最近接距離が1μm以上10μm以下である、請求項1~4のいずれか1項に記載の焼結材料。
  6.  前記基部は、一次元方向に配向性を有するように分布して存在している、請求項1~5のいずれか1項に記載の焼結材料。
  7.  請求項1~6のいずれか1項に記載の焼結材料を接続部に有する接続構造体。
  8.  請求項1~7のいずれか1項に記載の焼結材料の充填部を形成するために用いられ、 基材粒子にコロイド触媒又は焼結促進剤が配置された構造、若しくは、基材粒子に金属部が被覆された構造を有する、複合粒子。
  9.  基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材に金属部が被覆された構造を有する複合体と、金属粒子とを含む接合用組成物において、 前記接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度をA、前記複合体を除去した接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度Bとしたときに、A>Bを満たす、接合用組成物。
  10.  基材にコロイド触媒又は焼結促進剤が配置された構造を有する複合体、若しくは、基材に金属部が被覆された構造を有する複合体と、金属粒子とを含む接合用組成物において、 前記接合用組成物の焼結材料の三次元画像における基部の体積分布の尖度をAとしたときに、Aの値が0.2以上である、接合用組成物。
  11.  請求項9又は10に記載の接合用組成物を焼結する工程を含む、焼結材料の製造方法。
PCT/JP2018/005923 2017-02-20 2018-02-20 焼結材料、接続構造体、複合粒子、接合用組成物及び焼結材料の製造方法 WO2018151313A1 (ja)

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