WO2018150294A1 - Display panel, information processing device and method for producing display panel - Google Patents

Abstract

The present invention is able to provide a novel display panel which has excellent convenience or reliability. Alternatively, the present invention is able to provide a novel display device which has excellent convenience or reliability. A display panel according to the present invention comprises a first pixel and a second pixel; and each of the first pixel and the second pixel comprises a light emitting layer, a first conductive film, a second conductive film and a third conductive film. The first conductive film has light semi-transmissive properties and light semi-reflective properties; and the second conductive film has light reflective properties. The third conductive film has light transmissive properties. The first conductive film is formed so as to sandwich the third conductive film and the light emitting layer between itself and the second conductive film. The distance between the first conductive film and the second conductive film in the first pixel and the distance between the first conductive film and the second conductive film in the second pixel are equal to each other. The first pixel emits light having a spectrum that has an emission peak wavelength within the wavelength range of from 630 nm to 670 nm (inclusive); and the second pixel emits light having a spectrum that has an emission peak wavelength within the wavelength range of from 430 nm to 460 nm (inclusive).

Description

Display panel, information processing apparatus, and method for manufacturing display panel

One embodiment of the present invention relates to a display panel, an information processing device, or a method for manufacturing a display panel.

Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, a manufacture, or a composition (composition of matter). Therefore, the technical field of one embodiment of the present invention disclosed in this specification more specifically includes a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, a driving method thereof, or a manufacturing method thereof, Can be cited as an example.

With the development of display technology, the required performance is becoming more sophisticated every day. Standards indicating the color gamut that can be reproduced by a display include the sRGB standard and the NTSC standard, which have been widely used as indexes, but recently, BT. The 2020 standard has been proposed.

BT. That can represent almost all object colors. Although it is the 2020 standard, it is difficult to realize the present situation by using a broad emission spectrum emitted from an organic compound as it is, so an attempt has been made to realize the standard by increasing the color purity by using a cavity structure or the like.

There has been proposed a structure in which a display panel is provided with regions having different cavity lengths covering a wider color gamut (see, for example, Patent Document 1).

JP 2006-032327 A

A light-emitting element using a microcavity method is advantageous in realizing full color. In particular, in order to achieve wide color reproducibility, it is necessary to obtain an optimum emission spectrum peak wavelength and a sharp spectrum.

However, in the case of a full-color light emitting element using a microcavity method, it is necessary to adjust the distance between a pair of electrodes for each pixel having a different emission color. A decrease in purity is a problem. Furthermore, the increase in the number of masks and processes in adjusting the distance between the pair of electrodes is also a problem.

Therefore, in one embodiment of the present invention, in a light-emitting device using a microcavity method including a plurality of light-emitting elements that exhibit light having different wavelengths, an element structure in which only light having a desired wavelength is emitted from each light-emitting element is provided. An object of the present invention is to provide a light-emitting device and a lighting device including a light-emitting element with good color purity and high light extraction efficiency. Furthermore, it aims at reducing the number of processes and cost.

An object of one embodiment of the present invention is to provide a novel display panel that is highly convenient or reliable. Another object is to provide a novel display device that is highly convenient or reliable. Another object is to provide a novel input / output device that is highly convenient or reliable. Another object is to provide a novel information processing device that is highly convenient or reliable. Another object is to provide a novel display panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device.

Note that the description of these problems does not disturb the existence of other problems. Note that one embodiment of the present invention does not have to solve all of these problems. Issues other than these will be apparent from the description of the specification, drawings, claims, etc., and other issues can be extracted from the descriptions of the specification, drawings, claims, etc. It is.

The display panel of one embodiment of the present invention includes a first pixel and a second pixel. Each of the first pixel and the second pixel includes a light emitting layer, a first conductive film, a second conductive film, and a third conductive film. The first conductive film has semi-light transmittance and semi-light reflectivity, and the second conductive film has light reflectivity. Alternatively, the first conductive film has light reflectivity, and the second conductive film has semi-light transmittance and semi-light reflectivity.

The third conductive film is light transmissive, the first conductive film is formed so as to sandwich the third conductive film between the second conductive film, and the light emitting layer is formed of the second conductive film. The first pixel has a first distance between the first conductive film and the second conductive film, and is formed so as to be sandwiched between the film and the third conductive film. The pixel has a second distance between the first conductive film and the second conductive film, the second distance is equal to the first distance, and the first pixel has a light emission maximum wavelength. Light having a spectrum having a wavelength in a wavelength region of 630 nm to 670 nm is emitted, and the second pixel emits light having a spectrum having a maximum emission wavelength in a wavelength region of 430 nm to 460 nm.

The above structure further includes a third pixel. The third pixel includes a light emitting layer, a first conductive film, a second conductive film, and a third conductive film. Is provided with a third distance between the first conductive film and the second conductive film, the third distance is different from the first distance, and the third pixel emits green light. preferable.

Each of the above structures preferably further includes a fourth conductive film, and the fourth conductive film preferably has light transmittance. In the first pixel, the fourth conductive film is disposed so as to be sandwiched between the light emitting layer and the third conductive film. In the second pixel, the fourth conductive film is formed of the light emitting layer. And the third conductive film are preferably arranged so as to be sandwiched between them. In the first pixel, the third conductive film has a first film thickness, and in the second pixel, the third conductive film has a second film thickness. In the first pixel, The fourth conductive film has a third film thickness. In the second pixel, the fourth conductive film has a fourth film thickness, and the first film thickness is equal to the second film thickness. The third film thickness is preferably equal to the fourth film thickness.

In each of the above structures, it is preferable that the third conductive film has a lower etching rate in one etching atmosphere than the fourth conductive film. Alternatively, it is preferable that the third conductive film has a lower etching rate when one solution is used than the fourth conductive film.

An information processing device according to one embodiment of the present invention includes one or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a line-of-sight input device, and a posture detection device described above. A display panel.

A method for manufacturing a display panel of one embodiment of the present invention includes a step of forming a first conductive film, a step of forming a second conductive film over the first conductive film, and a region above the second conductive film. A mask having a step of forming a third conductive film, a first region above the third conductive film, and a second region having a thickness smaller than the thickness of the first region. A step of forming, a first step of removing a portion of the first conductive film, the second conductive film, and the third conductive film that do not overlap with the mask; and a mask after the first step. A second step of removing the mask of the second region by retreating, a third step of removing a portion overlapping the second region of the third conductive film after the second step, and a third step After the step, a step of removing the mask, a step of forming a light emitting layer over the second conductive film or the third conductive film, and light emission Over, characterized in that it comprises a step of forming a fourth conductive film.

In the drawings attached to the present specification, the components are classified by function, and the block diagram is shown as an independent block. However, it is difficult to completely separate the actual components for each function. May involve multiple functions.

In this specification, the terms “source” and “drain” of a transistor interchange with each other depending on the polarity of the transistor or the level of potential applied to each terminal. In general, in an n-channel transistor, a terminal to which a low potential is applied is called a source, and a terminal to which a high potential is applied is called a drain. In a p-channel transistor, a terminal to which a low potential is applied is called a drain, and a terminal to which a high potential is applied is called a source. In this specification, for the sake of convenience, the connection relationship between transistors may be described on the assumption that the source and the drain are fixed. However, the names of the source and the drain are actually switched according to the above-described potential relationship. .

In this specification, the source of a transistor means a source region that is part of a semiconductor film functioning as an active layer or a source electrode connected to the semiconductor film. Similarly, a drain of a transistor means a drain region that is part of the semiconductor film or a drain electrode connected to the semiconductor film. The gate means a gate electrode.

In this specification, the state where the transistors are connected in series means, for example, a state where only one of the source and the drain of the first transistor is connected to only one of the source and the drain of the second transistor. To do. In addition, the state where the transistors are connected in parallel means that one of the source and the drain of the first transistor is connected to one of the source and the drain of the second transistor, and the other of the source and the drain of the first transistor is connected. It means a state of being connected to the other of the source and the drain of the second transistor.

In this specification, the connection means an electrical connection, and corresponds to a state where current, voltage, or potential can be supplied or transmitted. Therefore, the connected state does not necessarily indicate a directly connected state, and a wiring, a resistor, a diode, a transistor, or the like is provided so that current, voltage, or potential can be supplied or transmitted. The state of being indirectly connected through a circuit element is also included in the category.

In this specification, even when independent components on the circuit diagram are connected to each other, in practice, for example, when a part of the wiring functions as an electrode, In some cases, it also has the functions of the components. In this specification, the term “connection” includes a case where one conductive film has functions of a plurality of components.

In this specification, one of a first electrode and a second electrode of a transistor refers to a source electrode, and the other refers to a drain electrode.

According to one embodiment of the present invention, a novel display panel that is highly convenient or reliable can be provided. Alternatively, a novel display device that is highly convenient or reliable can be provided. Alternatively, a novel input / output device that is highly convenient or reliable can be provided. Alternatively, a novel information processing device that is highly convenient or reliable can be provided. Alternatively, a novel display panel, a novel display device, a novel input / output device, a novel information processing device, or a novel semiconductor device can be provided.

Note that the description of these effects does not disturb the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. It should be noted that the effects other than these are naturally obvious from the description of the specification, drawings, claims, etc., and it is possible to extract the other effects from the descriptions of the specification, drawings, claims, etc. It is.

4A and 4B are a top view and cross-sectional views illustrating a pixel and a subpixel of a display panel according to Embodiment. 4A and 4B are a top view and cross-sectional views illustrating a pixel and a subpixel of a display panel according to Embodiment. 4A and 4B are a top view and a schematic view illustrating a structure of a display panel according to an embodiment. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. FIG. 10 is a top view illustrating a structure of a pixel of a display panel according to an embodiment. FIG. 6 is a circuit diagram illustrating a pixel circuit of a display panel according to an embodiment. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 8A and 8B are cross-sectional views illustrating a method for manufacturing a display panel according to Embodiment. 8A and 8B are cross-sectional views illustrating a method for manufacturing a display panel according to Embodiment. 4A and 4B illustrate a multi-tone mask according to an embodiment. 8A and 8B are cross-sectional views illustrating a method for manufacturing a display panel according to Embodiment. 4A and 4B are a top view and cross-sectional views illustrating a pixel and a subpixel of a display panel according to Embodiment. 4A and 4B are a schematic view and a cross-sectional view illustrating a structure of a display panel according to an embodiment. FIG. 9 is a block diagram illustrating a structure of a display device according to an embodiment. 4A and 4B are a block diagram illustrating a structure of a display panel according to Embodiment and an external view thereof; FIG. 3 is a block diagram illustrating a structure of an input / output device according to an embodiment. 4A and 4B are a top view and a projection view illustrating the structure of the input / output device according to the embodiment. FIG. 6 illustrates a structure of an input / output device according to an embodiment. FIG. 9 is a block diagram illustrating a structure of a display panel of a display device according to an embodiment. FIG. 9 is a block diagram illustrating a structure of a display panel of a display device according to an embodiment. FIG. 10 is a top view illustrating a structure of a pixel of a display panel according to an embodiment. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. 4 is a cross-sectional view illustrating a structure of a display panel according to Embodiment. FIG. FIG. 10 is a top view illustrating a structure of a pixel of a display panel according to an embodiment. FIG. 6 is a circuit diagram illustrating a pixel circuit of a display panel according to an embodiment. FIG. 6 is a schematic diagram illustrating the shape of a light reflection film of a display panel according to an embodiment. 2A and 2B are a block diagram and a schematic diagram illustrating a structure of an information processing device according to an embodiment. FIG. 6 is a flowchart illustrating a method for driving the information processing apparatus according to the embodiment. 6A and 6B are a flowchart and a timing chart illustrating a method for driving an information processing apparatus according to an embodiment. 2A and 2B illustrate a structure of an information processing device according to an embodiment. 2A and 2B illustrate a structure of an information processing device according to an embodiment. The figure explaining the refractive index which concerns on an Example. The figure explaining the sample which concerns on an Example, and light intensity.

The display panel of one embodiment of the present invention includes a plurality of pixels. The plurality of pixels include self-luminous display elements that display colors having different hues. The plurality of pixels include minute optical resonators (also referred to as microcavities).

Accordingly, it is possible to provide a light emitting device and a lighting device including a light emitting element with good color purity. Furthermore, the number of steps and the cost can be reduced by making a part of the manufacturing process of the microresonator structure of two pixels having different hues the same.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment, a structure of a display panel of one embodiment of the present invention is described.

1A and 1B are a top view and a cross-sectional view illustrating a pixel and a subpixel of a display panel of one embodiment of the present invention, respectively. FIG. 1A is a top view of a pixel of a display panel of one embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line Y3-Y4 in FIG.

2A and 2B are a top view and a cross-sectional view illustrating a pixel and a subpixel of a display panel of one embodiment of the present invention, respectively. 2A is a top view of a pixel of a display panel of one embodiment of the present invention, and FIG. 2B is a cross-sectional view taken along line Y3-Y4 in FIG.

FIG. 3 illustrates a structure of a display panel of one embodiment of the present invention. 3A is a top view of the display panel, and FIG. 3B is a top view illustrating part of the pixels of the display panel illustrated in FIG. 3A. FIG. 3C is a schematic diagram illustrating a cross-sectional structure of the display panel illustrated in FIG.

FIG. 6 is a top view illustrating a structure of a pixel of the display panel illustrated in FIG.

4 and 5 are cross-sectional views illustrating the structure of the display panel. 4A is a cross-sectional view taken along the cutting line X1-X2, the cutting line X3-X4, and the cutting line X5-X6 in FIG. 6, and FIG. 4B and FIG. Both are diagrams for explaining a part of FIG.

5 is a cross-sectional view taken along a cutting line X7-X8 in FIG. 6 and a cutting line X9-X10 in FIG.

FIG. 7 is a circuit diagram illustrating a structure of a pixel circuit included in the display panel of one embodiment of the present invention.

In the present specification, a variable having an integer value of 1 or more may be used for the sign. For example, (p) including a variable p that takes an integer value of 1 or more may be used as a part of a code that identifies any of the maximum p components. Further, for example, a variable m that takes an integer value of 1 or more and (m, n) including a variable n may be used as part of a code that identifies any of the maximum m × n components.

<Configuration Example 1 of Display Panel>
A display panel 700 described in this embodiment includes a plurality of pixels. The plurality of pixels have a function of displaying colors having different hues.

Using the plurality of pixels, hue colors that cannot be displayed by the pixels can be displayed by additive color mixing.

Note that in the case where a plurality of pixels that can display colors having different hues are used for color mixing, each pixel can be referred to as a sub-pixel. In addition, a plurality of sub-pixels can be referred to as a pixel.

For example, the pixel 702 (i, j), the pixel 702 (i, j + 1), and the pixel 702 (i, j + 2) are all regarded as subpixels, and these are regarded as a set and are rephrased as a pixel 703 (i, k). (See FIG. 1A).

Specifically, the pixel 702 (i, j) that displays red, the pixel 702 (i, j + 1) that displays green, and the pixel 702 (i, j + 2) that displays blue are regarded as sub-pixels, and are combined into one set. , And can be used for the pixel 703 (i, k).

Further, for example, a sub-pixel for displaying white can be used for the pixel in addition to the above set.

<Configuration Example 1 of Display Element>
The pixel 702 (i, j) includes the display element 550 (i, j) (see FIG. 1B). The display element 550 (i, j) has a function of emitting light. For example, an organic EL element can be used for the display element 550 (i, j). The display element 550 (i, j) includes a light-emitting layer 553, an electrode 551 (i, j), and an electrode 552. For example, the electrode 551 (i, j) is formed using a light-transmitting material, and the electrode 552 is formed using a light-reflecting material. The same applies to the pixel 702 (i, j + 1) and the pixel 702 (i, j + 2). The light-emitting layer 553 is a layer containing a light-emitting material.

As will be described later, the pixel 702 (i, j) includes a red colored film CF1 (R), the pixel 702 (i, j + 1) includes a green colored film CF1 (G), and the pixel 702 ( i, j + 2) includes a blue colored film CF1 (B).

In the display element 550 (i, j), a conductive film 551_0 (i, j) having semi-light transmittance and semi-light reflectivity and a conductive film 551_1 (i, j) having light transmittance are formed using an electrode 551 ( i, j). The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

The light-transmitting conductive film 551_1 (i, j) includes a region sandwiched between the light-transmitting layer 553 and the conductive film 551_0 (i, j) having semi-light transmitting and semi-light reflecting properties.

In this case, a stacked film of the light-emitting layer 553 and the light-transmitting conductive film 551_1 (i, j) can be regarded as a light-transmitting film. The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

The pixel 702 (i, j), the pixel 702 (i, j + 1), and the pixel 702 (i, j + 2) have a microresonator structure. A micro-optical resonator structure is a light-transmitting film in which a film having a predetermined optical distance in the thickness direction is sandwiched between a light-transmitting film and a light-reflecting film. Refers to a laminated structure. The light-transmitting conductive film 551_1 (i, j) may have a stacked structure of two or more different light transmittances.

FIG. 1B shows red light R01 and R02, green light G01 and G02, and blue light B01 and B02. Either light is emitted from the light emitting layer 553. D0 and d1 are also shown. Each of d0 and d1 is a distance along the film thickness direction of the conductive film 551_0 between the conductive film 551_0 (i, j) and the electrode 552.

The light R02, the light G02, and the light B02 are reflected at an interface between the conductive film 551_0 (i, j) having semi-light transmittance and semi-light reflectivity and the conductive film 551_1 (i, j) having light transmittance. . The light R02, the light G02, and the light B02 are reflected at the interface between the light-emitting layer 553 and the electrode 552 having light reflectivity.

In the pixel 702 (i, j), the light R01 and the light R02 interfere and strengthen each other. In the pixel 702 (i, j + 1), the light G01 and the light G02 interfere and strengthen each other. In the pixel 702 (i, j + 2), the light B01 and the light B02 interfere and strengthen each other.

In the display panel 700 of one embodiment of the present invention, the pixel 702 (i, j) and the pixel 702 (i, j + 2) have a distance d0. Further, the distance d0 at the pixel 702 (i, j) is different from the distance d1 at the pixel 702 (i, j + 1). In other words, the distance between the electrode 552 and the conductive film 551_0 (i, j) in the pixel 702 (i, j), and the distance between the electrode 552 and the conductive film 551_0 (i, j + 2) in the pixel 702 (i, j + 2). Are approximately equal. In addition, the distance between the electrode 552 and the conductive film 551_0 (i, j) in the pixel 702 (i, j) and the distance between the electrode 552 and the conductive film 551_0 (i, j + 1) in the pixel 702 (i, j + 1) , Different. In addition, in this specification etc., two distances being substantially equal means that the ratio of one of the two distances to the other is 0.8 or more and 1.2 or less.

If the refractive index of the light-transmitting conductive film 551_1 (i, j) is wavelength-dependent and the refractive indexes of the red light and the blue light are different from each other, the distance at the pixel 702 (i, j) The optical distance differs between d0 and the distance d0 at the pixel 702 (i, j + 2). In the display panel 700, an effective minute optical resonator structure is formed by determining the distance d0 in consideration of the refractive index.

Note that a film having semi-light transmissivity and semi-light reflectivity has a function of transmitting part of visible light and a function of reflecting another part. Specifically, a metal film that is thin enough to transmit light can be used as a film having semi-light-transmitting properties and semi-light-reflecting properties.

Accordingly, the minute optical resonator structure can be provided in the pixel 702 (i, j), the pixel 702 (i, j + 1), and the pixel 702 (i, j + 2). The pixel 702 (i, j) can increase the color purity of red and make the display vivid. In addition, the pixel 702 (i, j + 1) can increase the color purity of green and make the display vivid. The pixel 702 (i, j + 2) can increase the color purity of blue and make the display vivid.

Alternatively, light with a predetermined wavelength can be extracted more efficiently than other light. Alternatively, light with a narrow half-width of the spectrum can be extracted. Alternatively, brightly colored light can be extracted.

Alternatively, as in the display panel 700_1, a stacked structure in which the conductive film 551_2 (i, j) is provided in contact with the conductive film 551_1 (i, j) may be used (see FIG. 2B). Here, the conductive film 551_1 (i, j) and the conductive film 551_2 (i, j) are preferably different materials. Note that the conductive film 551_1 (i, j) and the conductive film 551_2 (i, j) may be formed of the same material. The same applies to the conductive film 551_1 (i, j + 2).

In the display element 550 (i, j), the conductive film 551_0 (i, j) having semi-light transmittance and semi-light reflectivity, the conductive film 551_1 (i, j) having light transmittance, The provided conductive film 551_2 (i, j) can be used for the electrode 551 (i, j). The same applies to the display element 550 (i, j + 2).

The light-transmitting conductive film 551_1 (i, j) includes a region sandwiched between the light-transmitting layer 553 and the conductive film 551_0 (i, j) having semi-light transmitting and semi-light reflecting properties. The light-transmitting conductive film 551_2 (i, j) includes a region sandwiched between the light-transmitting conductive film 551_1 (i, j) and the light-emitting layer 553. In this case, a stacked film of the light-emitting layer 553, the light-transmitting conductive film 551_1 (i, j), and the light-transmitting conductive film 551_2 (i, j) can be regarded as a light-transmitting film. . The same applies to the display element 550 (i, j + 2).

In the display element 550 (i, j + 1), a conductive film 551_0 (i, j + 1) having a semi-light transmitting property and a semi-light reflecting property and a conductive film 551_1 (i, j + 1) having a light transmitting property are connected to an electrode 551 ( i, j + 1).

The light-transmitting conductive film 551_1 (i, j + 1) includes a region sandwiched between the light-transmitting layer 553_0 (i, i + 1) and the light-emitting layer 553. In this case, the stacked film of the light-emitting layer 553 and the light-transmitting conductive film 551_1 (i, j + 1) can be regarded as a light-transmitting film.

As described in Embodiment 2, when the electrode 551 (i, j) has a stacked structure like the display panel 700_1, it is effective in simplifying the manufacturing process of the electrode 551 (i, j).

<Pixel Configuration Example 1>
For example, a light-emitting layer that emits white light can be used for the light-emitting layer 553 (see FIG. 2B).

The pixel 702 (i, j) includes a red colored film CF1 (R) and has a function of emitting red light (see FIG. 2B). The pixel 702 (i, j + 1) includes a green coloring film CF1 (G) and has a function of emitting green light. The pixel 702 (i, j + 2) includes a blue colored film CF1 (B) and has a function of emitting blue light. The sub-pixels are separated from each other by an insulating film 528. The light-emitting layer 553 includes a region disposed in the pixel 702 (i, j), a region disposed in the pixel 702 (i, j + 1), and a region disposed in the pixel 702 (i, j + 2).

In the pixel 702 (i, j), the light emitting layer 553 can have a thickness of, for example, 188 nm. As the conductive film 551_1 (i, j), for example, an oxide conductive film having a thickness of 50 nm and containing indium, tin, and silicon can be used. For the conductive film 551_2 (i, j), for example, an oxide conductive film having a thickness of 62 nm and containing indium and zinc can be used. The same applies to the pixel 702 (i, j + 2).

In the pixel 702 (i, j + 1), the light emitting layer 553 can have a thickness of, for example, 188 nm. For the conductive film 551_1 (i, j + 1), for example, an oxide conductive film having a thickness of 50 nm and containing indium, tin, and silicon can be used.

With the configuration of each sub-pixel based on the film thickness, the pixel 702 (i, j) has a higher red color purity, the pixel 702 (i, j + 1) has a higher green color purity, and the pixel 702 (i, j + 1) has a blue color purity. The color purity of the display can be increased and any display can be made vivid.

<Configuration Example 2 of Display Panel>
A display panel 700 described in this embodiment includes a pixel 702 (i, j) (see FIG. 3A or FIG. 17).

<Pixel Configuration Example 2>
The pixel 702 (i, j) includes a display element 550 (i, j) (see FIG. 3C). In addition, the pixel 702 (i, j) includes a pixel circuit 530 (i, j).

The pixel circuit 530 (i, j) includes a conductive film. The conductive film may include a region that transmits visible light. For example, a conductive film that transmits visible light can be used for the conductive films 512A, 512B, and 504 (see FIG. 4A).

Note that each of the conductive films 512A, 512B, and 504 has a function of an electrode of the transistor M. Alternatively, each of the conductive films 512A, 512B, and 504 has a wiring function of the pixel circuit 530 (i, j) (see FIG. 4A or FIG. 4B).

<Configuration Example 2 of Display Element>
The display element 550 (i, j) is electrically connected to the pixel circuit 530 (i, j) (see FIG. 3C). For example, the display element 550 (i, j) is electrically connected to the pixel circuit 530 (i, j) at the connection portion 522A. Specifically, the electrode 551 (i, j) of the display element 550 (i, j) is electrically connected to the conductive film 512A of the transistor M.

The display element 550 (i, j) has a function of emitting visible light toward the substrate 770 (see FIGS. 3C and 4A). At this time, the colored film CF1 (R) can be provided in the path through which the light L1 is emitted. The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

<Configuration Example 1 of Pixel Circuit>
The pixel circuit 530 (i, j) includes a transistor M. The transistor M includes a semiconductor film 508, a conductive film 512A, a conductive film 512B, and a conductive film 504 functioning as a gate electrode.

The semiconductor film 508 includes a region 508A electrically connected to the conductive film 512A and a region 508B electrically connected to the conductive film 512B (see FIG. 4B).

The semiconductor film 508 includes a region 508C that overlaps with the conductive film 504 functioning as a gate electrode between the region 508A and the region 508B.

The pixel circuit 530 (i, j) has a function of driving the display element 550 (i, j) (see FIG. 7).

A switch, a transistor, a diode, a resistor, an inductor, a capacitor, or the like can be used for the pixel circuit 530 (i, j).

For example, one or more transistors can be used for the switch. Alternatively, a plurality of transistors connected in parallel, a plurality of transistors connected in series, and a plurality of transistors connected in combination of series and parallel can be used for one switch.

For example, the pixel circuit 530 (i, j) is electrically connected to the signal line S2 (j), the scanning line G2 (i), and the conductive film ANO (see FIG. 7). Note that the conductive film 512B is electrically connected to the conductive film ANO at the connection portion 522B (see FIGS. 4A and 7).

The pixel circuit 530 (i, j) includes a switch SW2, a transistor M, and a capacitor C21 (see FIG. 7).

For example, a transistor including a gate electrode electrically connected to the scan line G2 (i) and a first electrode electrically connected to the signal line S2 (j) can be used for the switch SW2. .

The transistor M includes a gate electrode that is electrically connected to the second electrode of the transistor used for the switch SW2, and a first electrode that is electrically connected to the conductive film ANO.

Note that a transistor including a conductive film provided so that a semiconductor film is interposed between a gate electrode and the gate electrode can be used for the transistor M. For example, a conductive film that is electrically connected to a wiring that can supply the same potential as the gate electrode of the transistor M can be used for the conductive film.

The capacitor C21 includes a first electrode electrically connected to the second electrode of the transistor used for the switch SW2, and a second electrode electrically connected to the first electrode of the transistor M. .

In addition, the electrode 551 (i, j) of the display element 550 (i, j) is electrically connected to the second electrode of the transistor M, and the electrode 552 of the display element 550 (i, j) is electrically connected to the conductive film VCOM2. Connect. Thereby, the display element 550 (i, j) can be driven.

<Pixel Configuration Example 3>
The pixel 702 (i, j) includes an insulating film 573 (see FIG. 5). For example, a single film or a stacked film in which a plurality of films are stacked can be used for the insulating film 573. Specifically, a stacked film in which the insulating films 573A and 573B are stacked can be used for the insulating film 573.

The pixel 702 (i, j) includes an insulating film 518. Note that the insulating film 573 includes, for example, a region in contact with the insulating film 518 outside the display region 231.

The display element 550 (i, j) includes a region sandwiched between the insulating film 573 and the insulating film 518.

The display element 550 (i, j) includes an electrode 551 (i, j), a light emitting layer 553, and an electrode 552. The light-emitting layer 553 includes a region sandwiched between the electrode 551 (i, j) and the electrode 552. The light-emitting layer 553 includes an organic compound.

Thereby, diffusion of impurities to the display element can be suppressed. As a result, a novel display device that is highly convenient or reliable can be provided.

<Configuration Example 3 of Display Panel>
In addition, the display panel 700 described in this embodiment includes a display region 231 (see FIG. 17).

<Configuration example of display area>
The display region 231 is scanned with a group of a plurality of pixels 702 (i, 1) to 702 (i, n) and another group of a plurality of pixels 702 (1, j) to 702 (m, j). A line G2 (i) and a signal line S2 (j) are included (see FIG. 17). Further, the conductive film VCOM2 and the conductive film ANO are included. Note that i is an integer of 1 to m, j is an integer of 1 to n, and m and n are integers of 1 or more.

A group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes a pixel 702 (i, j), and a group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes Arranged in the row direction (direction indicated by arrow R1 in the figure).

The other group of the plurality of pixels 702 (1, j) to 702 (m, j) includes the pixel 702 (i, j), and the other group of the plurality of pixels 702 (1, j) to 702 (m , J) are arranged in a column direction (direction indicated by an arrow C1 in the drawing) intersecting the row direction.

The scan line G2 (i) is electrically connected to a group of the plurality of pixels 702 (i, 1) to 702 (i, n) arranged in the row direction.

The signal line S2 (j) is electrically connected to another group of the plurality of pixels 702 (1, j) to 702 (m, j) arranged in the column direction.

<Configuration Example 4 of Display Panel>
In addition, the display panel 700 described in this embodiment can include the driver circuit GD or the driver circuit SD (see FIGS. 3A and 17).

<Drive circuit GD>
The drive circuit GD has a function of supplying a selection signal based on the control information.

For example, a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or higher, preferably 60 Hz or higher is provided based on the control information. Thereby, a moving image can be displayed smoothly.

For example, it has a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute based on the control information. Thereby, a still image can be displayed in a state where flicker is suppressed.

In addition, the display panel can include a plurality of driver circuits. For example, the display panel 700B includes a driver circuit GDA and a driver circuit GDB (see FIG. 18).

For example, when a plurality of drive circuits are provided, the frequency with which the drive circuit GDA supplies the selection signal and the frequency with which the drive circuit GDB supplies the selection signal can be made different. Specifically, the selection signal can be supplied to another region displaying the moving image at a frequency higher than the frequency of supplying the selection signal to one region displaying the still image. Thereby, a still image can be displayed in a state where flicker is suppressed in one area, and a moving image can be displayed smoothly in another area.

<Drive circuit SD>
The drive circuit SD includes a drive circuit SD1 and a drive circuit SD2. The drive circuit SD1 has a function of supplying an image signal based on the information V11, and the drive circuit SD2 has a function of supplying an image signal based on the information V12 (see FIG. 22 or FIG. 23).

The drive circuit SD1 or the drive circuit SD2 has a function of generating an image signal and a function of supplying the image signal to a pixel circuit that is electrically connected to one display element. Specifically, it has a function of generating a signal whose polarity is inverted. Thereby, for example, a liquid crystal display element can be driven.

For example, various sequential circuits such as a shift register can be used for the drive circuit SD.

For example, an integrated circuit in which the drive circuit SD1 and the drive circuit SD2 are integrated can be used for the drive circuit SD. Specifically, an integrated circuit formed on a silicon substrate can be used for the drive circuit SD.

For example, an integrated circuit can be mounted on a terminal by using a COG (Chip on glass) method or a COF (Chip on Film) method. Specifically, an integrated circuit can be mounted on a terminal using an anisotropic conductive film.

<Configuration Example 5 of Display Panel>
In addition, the display panel 700 described in this embodiment includes a terminal 519B, a substrate 570, a substrate 770, a bonding layer 505, a functional film 770P, and the like (see FIG. 4A or FIG. 5).

<Terminal 519B>
The terminal 519B includes a conductive film 511B, for example. The terminal 519B can be electrically connected to the signal line S2 (j), for example.

<Substrate 570, Substrate 770>
The substrate 770 includes a region overlapping with the substrate 570. The substrate 770 includes a region that sandwiches the display element 550 (i, j) between the substrate 570 and the substrate 570.

In the region of the substrate 770 that overlaps with the display element 550 (i, j), for example, a material in which birefringence is suppressed can be used.

<Junction layer 505>
The bonding layer 505 has a function of bonding the substrate 770 and the substrate 570 together.

<Functional film 770P, etc.>
The functional film 770P includes a region overlapping with the display element 550 (i, j).

<Examples of components>
The display panel 700 includes the substrate 570, the substrate 770, or the bonding layer 505.

The display panel 700 includes the insulating film 521A, the insulating film 521B, the insulating film 528, the insulating film 516, the insulating film 503, or the insulating film 506.

In addition, the display panel 700 includes the signal line S2 (j), the scanning line G2 (i), or the conductive film ANO.

In addition, the display panel 700 includes a terminal 519B or a conductive film 511B.

The display panel 700 includes a pixel circuit 530 (i, j) or a transistor M.

The display panel 700 includes the display element 550 (i, j), the electrode 551 (i, j), the electrode 552, or the light-emitting layer 553 (j).

In addition, the display panel 700 includes an insulating film 573.

In addition, the display panel 700 includes a drive circuit GD or a drive circuit SD.

<Substrate 570>
A material having heat resistance high enough to withstand heat treatment in the manufacturing process can be used for the substrate 570.

For example, a material having a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 570. Specifically, a material polished or etched to a thickness of about 0.1 mm can be used.

For example, the areas of the sixth generation (1500 mm × 1850 mm), the seventh generation (1870 mm × 2200 mm), the eighth generation (2200 mm × 2400 mm), the ninth generation (2400 mm × 2800 mm), the tenth generation (2950 mm × 3400 mm), etc. A large glass substrate can be used for the substrate 570. Thus, a large display device can be manufactured.

An organic material, an inorganic material, a composite material of an organic material and an inorganic material, or the like can be used for the substrate 570. For example, an inorganic material such as glass, ceramics, or metal can be used for the substrate 570.

Specifically, alkali-free glass, soda-lime glass, potash glass, crystal glass, aluminosilicate glass, tempered glass, chemically tempered glass, quartz, sapphire, or the like can be used for the substrate 570. Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like can be used for the substrate 570. For example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like can be used for the substrate 570. Stainless steel, aluminum, or the like can be used for the substrate 570.

For example, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, or the like can be used for the substrate 570. Thus, a semiconductor element can be formed on the substrate 570.

For example, an organic material such as a resin, a resin film, or plastic can be used for the substrate 570. Specifically, a resin film or a resin plate such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or an acrylic resin can be used for the substrate 570.

For example, a composite material in which a film such as a metal plate, a thin glass plate, or an inorganic material is attached to a resin film or the like can be used for the substrate 570. For example, a composite material in which a fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin film can be used for the substrate 570. For example, a composite material in which a fibrous or particulate resin or an organic material is dispersed in an inorganic material can be used for the substrate 570.

Further, a single layer material or a material in which a plurality of layers is stacked can be used for the substrate 570. For example, a material in which a base material and an insulating film that prevents diffusion of impurities contained in the base material are stacked can be used for the substrate 570. Specifically, a material in which one or a plurality of films selected from a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or the like that prevents diffusion of impurities contained in glass is used for the substrate 570 is used. Can do. Alternatively, a material in which a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevents resin and diffusion of impurities that permeate the resin is stacked can be used for the substrate 570.

Specifically, a resin film such as polyester, polyolefin, polyamide, polyimide, polycarbonate, or an acrylic resin, a resin plate, a laminated material, or the like can be used for the substrate 570.

Specifically, a material containing a resin having a siloxane bond such as polyester, polyolefin, polyamide (nylon, aramid, or the like), polyimide, polycarbonate, polyurethane, acrylic resin, epoxy resin, or silicone can be used for the substrate 570.

Specifically, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), acrylic resin, or the like can be used for the substrate 570. Alternatively, a cycloolefin polymer (COP), a cycloolefin copolymer (COC), or the like can be used.

Further, paper, wood, or the like can be used for the substrate 570.

For example, a flexible substrate can be used for the substrate 570.

Note that a method of directly forming a transistor, a capacitor, or the like over a substrate can be used. Alternatively, for example, a method in which a transistor, a capacitor, or the like is formed over a substrate for a process that has heat resistance to heat applied during the manufacturing process, and the formed transistor, capacitor, or the like is transferred to the substrate 570 can be used. Thus, for example, a transistor or a capacitor can be formed over a flexible substrate.

<Substrate 770>
For example, a material that can be used for the substrate 570 can be used for the substrate 770. For example, a material having light transmittance selected from materials that can be used for the substrate 570 can be used for the substrate 770. Alternatively, a material in which an antireflection film of 1 μm or less, for example, is formed on one surface can be used for the substrate 770. Specifically, a stacked film in which three or more dielectric layers are stacked, preferably 5 layers or more, more preferably 15 layers or more can be used for the substrate 770. Thereby, a reflectance can be suppressed to 0.5% or less, preferably 0.08% or less.

For example, aluminosilicate glass, tempered glass, chemically tempered glass, sapphire, or the like can be suitably used for the substrate 770 disposed on the side closer to the user of the display panel. Thereby, it is possible to prevent the display panel from being damaged or damaged due to use.

For example, a resin film can be preferably used for the substrate 770. Thereby, a weight can be reduced. Or, for example, it is possible to reduce the frequency of occurrence of breakage due to dropping.

For example, a material having a thickness of 0.7 mm or less and a thickness of 0.1 mm or more can be used for the substrate 770. Specifically, a polished substrate can be used to reduce the thickness. Thereby, a weight can be reduced.

<Insulating Film 521A, Insulating Film 521B>
For example, an insulating inorganic material, an insulating organic material, or an insulating composite material including an inorganic material and an organic material can be used for the insulating film 521A or the insulating film 521B.

Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, or the like, or a stacked material in which a plurality selected from these films is stacked can be used for the insulating film 521A or the insulating film 521B.

For example, a film including a silicon oxide film, a silicon nitride film, a silicon oxynitride film, an aluminum oxide film, or the like, or a stacked material in which a plurality of layers selected from these are stacked can be used for the insulating film 521A or the insulating film 521B. Note that the silicon nitride film is a dense film and has an excellent function of suppressing impurity diffusion.

For example, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or the like, or a laminated material or a composite material of a plurality of resins selected from these can be used for the insulating film 521A or the insulating film 521B. Alternatively, a material having photosensitivity may be used. Accordingly, the insulating film 521A or the insulating film 521B can planarize steps resulting from various structures overlapping with the insulating film 521A or the insulating film 521B, for example.

Note that polyimide has characteristics superior to other organic materials in characteristics such as thermal stability, insulation, toughness, low dielectric constant, low thermal expansion coefficient, and chemical resistance. Thereby, polyimide can be suitably used for the insulating film 521A, the insulating film 521B, or the like.

For example, a film formed using a photosensitive material can be used for the insulating film 521A or the insulating film 521B. Specifically, a film formed using photosensitive polyimide, photosensitive acrylic resin, or the like can be used for the insulating film 521A or the insulating film 521B.

For example, a light-transmitting material can be used for the insulating film 521A or the insulating film 521B. Specifically, silicon nitride can be used for the insulating film 521A or the insulating film 521B.

<Insulating film 528>
For example, a material that can be used for the insulating film 521A or the insulating film 521B can be used for the insulating film 528. Specifically, a film containing polyimide can be used for the insulating film 528.

<Insulating film 518>
For example, a material that can be used for the insulating film 521A or the insulating film 521B can be used for the insulating film 518.

For example, a material having a function of suppressing diffusion of oxygen, hydrogen, water, alkali metal, alkaline earth metal, or the like can be used for the insulating film 518. Specifically, a nitride insulating film can be used for the insulating film 518. For example, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, or the like can be used for the insulating film 518. Thereby, diffusion of impurities into the semiconductor film of the transistor can be suppressed. For example, diffusion of oxygen from the oxide semiconductor film used for the semiconductor film of the transistor to the outside of the transistor can be suppressed. Alternatively, diffusion of hydrogen, water, or the like from the outside of the transistor to the oxide semiconductor film can be suppressed.

For example, a material having a function of supplying hydrogen or nitrogen can be used for the insulating film 518. Accordingly, hydrogen or nitrogen can be supplied to the film in contact with the insulating film 518. For example, the insulating film 518 can be formed in contact with the oxide semiconductor film, and hydrogen or nitrogen can be supplied to the oxide semiconductor film. Alternatively, conductivity can be imparted to the oxide semiconductor film. Alternatively, the oxide semiconductor film can be used for the second gate electrode.

<Insulating film 516>
For example, a material that can be used for the insulating film 521A or the insulating film 521B can be used for the insulating film 516. Specifically, a stacked film in which films with different manufacturing methods are stacked can be used for the insulating film 516.

For example, a first film containing silicon oxide or silicon oxynitride having a thickness of 5 nm to 150 nm, preferably 5 nm to 50 nm, and a silicon oxide having a thickness of 30 nm to 500 nm, preferably 50 nm to 400 nm Alternatively, a stacked film in which a second film containing silicon oxynitride or the like is stacked can be used for the insulating film 516.

Specifically, a film in which the spin density of a signal appearing at g = 2.001 derived from a dangling bond of silicon that can be observed by ESR measurement is 3 × 10 ¹⁷ spins / cm ³ or less is a first film. It is preferable to use it. Accordingly, for example, an oxide semiconductor film used for a semiconductor film of a transistor can be protected from damage caused by formation of the insulating film. Alternatively, oxygen captured by silicon defects can be reduced. Alternatively, permeation or movement of oxygen can be facilitated.

For example, the spin density of a signal appearing at g = 2.001 derived from a dangling bond of silicon that can be observed by ESR measurement is less than 1.5 × 10 ¹⁸ spins / cm ³ , and further 1 × 10 ^18. A material having a spins / cm ³ or less is preferably used for the second film.

<Insulating film 503>
For example, a material that can be used for the insulating film 521A or the insulating film 521B can be used for the insulating film 503. Specifically, silicon nitride, silicon nitride oxide, aluminum nitride, aluminum nitride oxide, silicon oxide, silicon oxynitride, or the like can be used for the insulating film 503. Thereby, for example, diffusion of impurities into the semiconductor film of the transistor can be suppressed.

<Insulating film 506>
For example, a material that can be used for the insulating film 521A or the insulating film 521B can be used for the insulating film 506. Specifically, a stacked film in which a first film having a function of suppressing oxygen permeation and a second film having a function of supplying oxygen can be used for the insulating film 506. Accordingly, for example, oxygen can be diffused into the oxide semiconductor film used for the semiconductor film of the transistor.

Specifically, silicon oxide film, silicon oxynitride film, silicon nitride oxide film, silicon nitride film, aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film, gallium oxide film, tantalum oxide film, magnesium oxide film A film including a lanthanum oxide film, a cerium oxide film, or a neodymium oxide film can be used for the insulating film 506.

For example, a film formed in an oxygen atmosphere can be used for the second film. Alternatively, a film into which oxygen is introduced after film formation can be used for the second film. Specifically, oxygen can be introduced after film formation by ion implantation, ion doping, plasma immersion ion implantation, plasma treatment, or the like.

<Insulating film 573>
For example, a material that can be used for the insulating film 521A or the insulating film 521B can be used for the insulating film 573. Specifically, a stacked film in which the insulating films 573A and 573B are stacked can be used for the insulating film 573.

For example, an oxide or a nitride can be used for the insulating film 573. Specifically, aluminum oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, silicon nitride, aluminum nitride, or the like can be used for the insulating film 573.

Specifically, it is less than 1 × 10 ⁻² g / (m ² · day), preferably 5 × 10 ⁻³ g / (m ² · day) or less, preferably 1 × 10 ⁻⁴ g / (m ² Day), preferably a film having a water vapor transmission rate of 1 × 10 ⁻⁵ g / (m ² · day) or less, preferably 1 × 10 ⁻⁶ g / (m ² · day) or less. Used for.

For example, a film that can be formed by a sputtering method can be used for the insulating film 573B. Further, a film that can be formed by an atomic layer deposition method (Atomic Layer Deposition method; ALD method) can be used for the insulating film 573A. Accordingly, for example, a low density region generated in an insulating film formed using a sputtering method can be covered with a dense insulating film formed using an atomic layer deposition method. Alternatively, a region where impurities generated in an insulating film formed by a sputtering method are easily diffused can be covered with a film which is difficult to diffuse impurities formed by an atomic layer deposition method. Alternatively, diffusion of impurities from the outside to the display element can be suppressed.

Specifically, a film containing aluminum oxide with a thickness of 50 nm to 1000 nm, preferably 100 nm to 300 nm can be used for the insulating film 573B. A film containing aluminum oxide with a thickness of 1 nm to 100 nm, preferably 5 nm to 50 nm can be used for the insulating film 573A.

<Wiring, terminal, conductive film>
A conductive material can be used for the wiring or the like. Specifically, a material having conductivity can be used for the signal line S2 (j), the scanning line G2 (i), the conductive film ANO, the terminal 519B, the conductive film 511B, or the like.

For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for the wiring.

Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese can be used for the wiring or the like. . Alternatively, an alloy containing the above metal element can be used for the wiring or the like. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or A two-layer structure in which a tungsten film is stacked on a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is stacked on the titanium film and a titanium film is further formed thereon can be used for wiring or the like. .

Specifically, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used for the wiring or the like.

Specifically, a film containing graphene or graphite can be used for the wiring or the like.

For example, by forming a film containing graphene oxide and reducing the film containing graphene oxide, the film containing graphene can be formed. Examples of the reduction method include a method of applying heat and a method of using a reducing agent.

For example, a film containing metal nanowires can be used for wiring or the like. Specifically, a nanowire containing silver can be used.

Specifically, a conductive polymer can be used for wiring or the like.

Note that, for example, the conductive material ACF1 can be used to electrically connect the terminal 519B and the flexible printed circuit board FPC1. Specifically, the terminal 519B and the flexible printed circuit board FPC1 can be electrically connected using the conductive material CP.

<Functional film 770P>
For example, an antireflection film, a polarizing film, a retardation film, or the like can be used for the functional film 770P.

Specifically, a circularly polarizing film can be used for the functional film 770P.

In addition, antistatic film that suppresses adhesion of dust, water-repellent film that makes it difficult to adhere dirt, antireflection film (anti-reflection film), non-glossy film (anti-glare film), and scratches caused by use A hard coat film or the like that suppresses the above can be used for the functional film 770P.

<Display element 550 (i, j)>
For example, a display element having a function of emitting light can be used for the display element 550 (i, j). Specifically, an organic electroluminescence element, an inorganic electroluminescence element, a light emitting diode, a QDLED (Quantum Dot LED), or the like can be used for the display element 550 (i, j).

For example, a light-emitting organic compound can be used for the light-emitting layer 553 (j).

For example, quantum dots can be used for the light-emitting layer 553 (j). Thereby, the half value width is narrow and it is possible to emit brightly colored light.

<Light emitting layer>
For example, a stacked material or the like stacked so as to emit white light can be used for the light-emitting layer 553 (j).

For example, a strip-shaped stacked material that is long in the column direction along the signal line S2 (j) can be used for the light-emitting layer 553 (j).

For example, a different light emitting layer may be formed for each subpixel. At this time, the laminated material laminated so as to emit red light is applied to the light emitting layer 553 (j), the laminated material laminated so as to emit green light is applied to the light emitting layer 553 (j + 1), and blue light is emitted. Or the like can be used for the light-emitting layer 553 (j + 2).

At this time, a strip-shaped stacked material that is long in the column direction along the signal line S2 (j) can be used for the light-emitting layer 553 (j), the light-emitting layer 553 (j + 1), and the light-emitting layer 553 (j + 2).

<Electrode 551 (i, j), Electrode 552>
For example, a material having a light-transmitting property with respect to visible light selected from materials that can be used for wirings or the like can be used for the electrode 551 (i, j).

Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like is used as the electrode 551 (i, j). Can be used. Alternatively, a metal film that is thin enough to transmit light can be used for the electrode 551 (i, j). Alternatively, a metal film that transmits part of light and reflects another part of light can be used for the electrode 551 (i, j). Thereby, the minute optical resonator structure can be provided in the display element 550 (i, j). As a result, light with a predetermined wavelength can be extracted more efficiently than other light.

For example, a material that can be used for wiring or the like can be used for the electrode 552. Specifically, a light-reflective material, in other words, a material that reflects visible light can be used for the electrode 552.

<Drive circuit GD>
Various sequential circuits such as a shift register can be used for the drive circuit GD. For example, a transistor MD, a capacitor, or the like can be used for the drive circuit GD. Specifically, a transistor that can be used for the switch SW2 or a transistor including a semiconductor film that can be formed in the same process as the transistor M can be used.

For example, the same structure as the transistor M can be used for the transistor MD.

For example, a different structure from the transistor that can be used for the transistor M can be used for the transistor MD. Specifically, a metal film can be used for the conductive films 512C, 512D, and 504E (see FIG. 4C). Thereby, the electrical resistance of the conductive film which also functions as a wiring can be reduced. Alternatively, external light traveling toward the region 508C can be blocked. Alternatively, abnormality in the electrical characteristics of the transistor due to external light can be prevented. Alternatively, the reliability of the transistor can be improved.

<Transistor>
For example, a semiconductor film that can be formed in the same process can be used for a transistor in a driver circuit and a pixel circuit.

For example, a bottom-gate transistor, a top-gate transistor, or the like can be used as a driver circuit transistor or a pixel circuit transistor.

By the way, for example, a bottom-gate transistor production line using amorphous silicon as a semiconductor can be easily modified to a bottom-gate transistor production line using an oxide semiconductor as a semiconductor. For example, a top gate type production line using polysilicon as a semiconductor can be easily modified to a top gate type transistor production line using an oxide semiconductor as a semiconductor. Both modifications can make effective use of existing production lines.

For example, a transistor in which an oxide semiconductor is used for a semiconductor film can be used. Specifically, an oxide semiconductor containing indium or an oxide semiconductor containing indium, gallium, and zinc can be used for the semiconductor film.

As an example, a transistor whose leakage current in an off state is smaller than that of a transistor using amorphous silicon as a semiconductor film can be used. Specifically, a transistor in which an oxide semiconductor is used for a semiconductor film can be used.

Accordingly, as compared with a pixel circuit using a transistor using amorphous silicon as a semiconductor film, the time during which the pixel circuit can hold an image signal can be lengthened. Specifically, the selection signal can be supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute while suppressing the occurrence of flicker. As a result, fatigue accumulated in the user of the information processing apparatus can be reduced. In addition, power consumption associated with driving can be reduced.

For example, a transistor including the semiconductor film 508, the conductive film 504, the conductive film 512A, and the conductive film 512B can be used for the transistor M (see FIG. 4B). Note that the insulating film 506 includes a region sandwiched between the semiconductor film 508 and the conductive film 504.

The conductive film 504 includes a region overlapping with the semiconductor film 508. The conductive film 504 has a function of a gate electrode. The insulating film 506 has a function of a gate insulating film.

The conductive films 512A and 512B are electrically connected to the semiconductor film 508. The conductive film 512A has one of the function of the source electrode and the function of the drain electrode, and the conductive film 512B has the other of the function of the source electrode and the function of the drain electrode.

A transistor including the conductive film 524 can be used for a transistor in a driver circuit or a pixel circuit (see FIG. 4B or FIG. 4C). The conductive film 524 includes a region in which the semiconductor film 508 is sandwiched between the conductive film 504 and the conductive film 504. Note that the insulating film 516 includes a region sandwiched between the conductive film 524 and the semiconductor film 508. For example, the conductive film 524 can be electrically connected to a wiring that supplies the same potential as the conductive film 504.

For example, a conductive film in which a 10-nm-thick film containing tantalum and nitrogen and a 300-nm-thick film containing copper are stacked can be used for the conductive film 504E of the transistor MD. Note that the film containing copper includes a region between which the film containing tantalum and nitrogen is sandwiched between the film containing copper.

For example, a stacked film in which a 400-nm-thick film containing silicon and nitrogen and a 200-nm-thick film containing silicon, oxygen, and nitrogen are stacked can be used for the insulating film 506. Note that the film containing silicon and nitrogen includes a region between the semiconductor film 508 and the film containing silicon, oxygen, and nitrogen.

For example, a 25-nm-thick film containing indium, gallium, and zinc can be used for the semiconductor film 508.

For example, a conductive film in which a 50-nm-thick film containing tungsten, a 400-nm-thick film containing aluminum, and a 100-nm-thick film containing titanium are stacked in this order, the conductive film 512C of the transistor MD or the conductive film It can be used for the film 512D. Note that the film containing tungsten includes a region in contact with the semiconductor film 508.

<Configuration Example 6 of Display Panel>
The structure of the display panel of one embodiment of the present invention is described with reference to FIGS.

8 and 9 are cross-sectional views illustrating the structure of the display panel. 8A is a cross-sectional view at a position corresponding to the cutting line X1-X2, the cutting line X3-X4, and the cutting line X5-X6 in FIG. 6, and FIG. 8B and FIG. (C) is a figure explaining a part of FIG. 8 (A).

9 is a cross-sectional view at a position corresponding to the cutting line X7-X8 in FIG. 6 and the cutting line X9-X10 in FIG.

The display panel described in this embodiment is different from the display panel described with reference to FIGS. 4 and 5 in that a top-gate transistor is provided.

<Configuration Example 7 of Display Panel>
The structure of the display panel of one embodiment of the present invention is described with reference to FIGS.

FIG. 10 illustrates a structure of a display panel of one embodiment of the present invention. 10A1 and 10A2 are schematic top views when the pixel 900 is viewed from the display surface side. FIG. 10B is a cross-sectional view taken along a cutting line AB in FIG.

<Pixel Configuration Example 4>
FIG. 10A1 is a schematic top view when the pixel 900 is viewed from the display surface side. A pixel 900 illustrated in FIG. 10A1 includes three subpixels. Each subpixel is provided with a light-emitting element 930EL (not illustrated in FIGS. 10A1 and 10A2), a transistor 910, and a transistor 912. In each subpixel illustrated in FIG. 10A1, a light-emitting region (light-emitting region 916R, light-emitting region 916G, or light-emitting region 916B) of the light-emitting element 930EL is illustrated. Note that the light-emitting element 930 </ b> EL is a so-called bottom emission light-emitting element that emits light to the transistor 910 and the transistor 912 side.

The pixel 900 includes a wiring 902, a wiring 904, a wiring 906, and the like. The wiring 902 functions as, for example, a scanning line. The wiring 904 functions as a signal line, for example. The wiring 906 functions as a power supply line for supplying a potential to the light emitting element, for example. In addition, the wiring 902 and the wiring 904 have portions that intersect each other. In addition, the wiring 902 and the wiring 906 have portions that cross each other. Note that although the structure in which the wiring 902 and the wiring 904 and the wiring 902 and the wiring 906 intersect with each other is illustrated here, the present invention is not limited to this, and a structure in which the wiring 904 and the wiring 906 intersect may be employed.

The transistor 910 functions as a selection transistor. A gate of the transistor 910 is electrically connected to the wiring 902. One of a source and a drain of the transistor 910 is electrically connected to the wiring 904.

The transistor 912 is a transistor that controls current flowing in the light-emitting element. A gate of the transistor 912 is electrically connected to the other of the source and the drain of the transistor 910. One of a source and a drain of the transistor 912 is electrically connected to the wiring 906, and the other is electrically connected to one of the pair of electrodes of the light-emitting element 930EL.

In FIG. 10A1, the light-emitting region 916R, the light-emitting region 916G, and the light-emitting region 916B each have a long strip shape in the vertical direction and are arranged in stripes in the horizontal direction.

Here, the wiring 902, the wiring 904, and the wiring 906 have a light shielding property. It is preferable to use a light-transmitting film for the other layers, that is, the transistors 910, 912, wirings connected to the transistors, contacts, capacitors, and the like. FIG. 10A2 illustrates an example in which the pixel 900 illustrated in FIG. 10A1 is divided into a transmission region 900t that transmits visible light and a light-blocking region 900s that blocks visible light. In this manner, by manufacturing a transistor using a light-transmitting film, a portion other than a portion where each wiring is provided can be a transmission region 900t. In addition, since the light-emitting region of the light-emitting element can be overlapped with a transistor, a wiring connected to the transistor, a contact, a capacitor, or the like, the aperture ratio of the pixel can be increased.

Note that the higher the ratio of the area of the transmissive region to the area of the pixel, the higher the light extraction efficiency of the light emitting element. For example, the ratio of the area of the transmissive region to the area of the pixel can be 1% to 95%, preferably 10% to 90%, more preferably 20% to 80%. In particular, it is preferably 40% or more or 50% or more, and more preferably 60% or more and 80% or less.

FIG. 10B is a cross-sectional view corresponding to a cross-sectional surface taken along dashed-dotted line AB in FIG. 10A2. Note that in FIG. 10B, cross sections of the light-emitting element 930EL, the capacitor 913, the driver circuit portion 901, and the like which are not illustrated in the top view are also illustrated. The driver circuit portion 901 can be used as a scanning line driver circuit portion or a signal line driver circuit portion. In addition, the driver circuit portion 901 includes a transistor 911.

As shown in FIG. 10B, light from the light-emitting element 930EL is emitted in the direction indicated by the dashed arrow. Light from the light-emitting element 930EL is extracted to the outside through the transistor 910, the transistor 912, the capacitor 913, and the like. Therefore, it is preferable that the film and the like included in the capacitor 913 have light transmittance. As the area of the light-transmitting region included in the capacitor 913 is larger, attenuation of light emitted from the light-emitting element 930EL can be suppressed.

Note that in the driver circuit portion 901, the transistor 911 may be light-blocking. By making the transistor 911 and the like of the driver circuit portion 901 light-shielding, the reliability and driving ability of the driver circuit portion can be improved. That is, it is preferable to use a light-shielding conductive film for the gate electrode, the source electrode, and the drain electrode included in the transistor 911. Similarly, it is preferable to use a light-shielding conductive film for the wiring connected thereto.

For the transistor, the wiring, the capacitor, and the like illustrated in FIG. 10, the following materials can be used.

The semiconductor film included in the transistor can be formed using a light-transmitting semiconductor material. As the light-transmitting semiconductor material, a metal oxide, an oxide semiconductor, or the like can be given. The oxide semiconductor preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind selected from the above or a plurality of kinds may be included.

The conductive film included in the transistor can be formed using a light-transmitting conductive material. The light-transmitting conductive material preferably contains one or more selected from indium, zinc, and tin. Specifically, In oxide, In—Sn oxide (also referred to as ITO: Indium Tin Oxide), In—Zn oxide, In—W oxide, In—W—Zn oxide, In—Ti oxide, In-Sn-Ti oxide, In-Sn-Si oxide, Zn oxide, Ga-Zn oxide, and the like can be given.

Alternatively, an oxide semiconductor whose resistance is reduced by adding an impurity element to the conductive film included in the transistor may be used. The low-resistance oxide semiconductor can be referred to as an oxide conductor (OC).

For example, in an oxide conductor, an oxygen vacancy is formed in an oxide semiconductor, and hydrogen is added to the oxygen vacancy, whereby a donor level is formed in the vicinity of the conduction band. When the donor level is formed in the oxide semiconductor, the oxide semiconductor has high conductivity and becomes a conductor.

Note that an oxide semiconductor has a large energy gap (e.g., an energy gap of 2.5 eV or more), and thus has an optical transparency with respect to visible light. As described above, the oxide conductor is an oxide semiconductor having a donor level in the vicinity of the conduction band. Therefore, the oxide conductor is less affected by the absorption due to the donor level and has a light transmittance comparable to that of the oxide semiconductor with respect to visible light.

In addition, the oxide conductor preferably includes one or more metal elements contained in a semiconductor film included in the transistor. By using an oxide semiconductor including the same metal element for two or more layers included in a transistor, a manufacturing apparatus (eg, a film formation apparatus or a processing apparatus) can be used in common for two or more steps. Since it becomes possible, manufacturing cost can be suppressed.

With the structure of the pixel included in the display device described in this embodiment, light emitted from the light-emitting element can be used efficiently. Therefore, an excellent display device in which power consumption is suppressed can be provided.

The display device of one embodiment of the present invention can reproduce color gamuts of various standards. For example, PAL (Phase Alternating Line) standard and NTSC (National Television System Committee) standard used in TV broadcasting, sRGB (standard RGB) widely used in electronic devices such as personal computers, digital cameras, and printers And ITU-R BT. Used in the Adobe RGB standard and HDTV (also known as High Definition Television). 709 (International Telecommunication Union Radiocommunication Sector Broadcasting Service (Television) 709) Standard, DCI-P3 (DigitalCineMitiTitiHit3P) RBT. A color gamut such as 2020 (REC. 2020 (Recommendation 2020)) standard can be reproduced.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 2)
<Example 1 of pixel manufacturing method>
In this embodiment, a method for manufacturing the display element 550 (i, j), the display element 550 (i, j + 1), and the display element 550 (i, j + 2) will be described. In particular, a manufacturing method using a multi-tone (high-tone) mask will be described.

FIG. 11 is a cross-sectional view illustrating a structure of the display panel 700_1.

A portion indicated by a pixel 702 (i, j) in FIG. 11 is a cross-sectional view taken along a cutting line X5-X5M of the pixel 702 (i, j) shown in FIG. Similarly to the pixel 702 (i, j) shown in FIG. 6, when the cutting line X5-X5M is provided in the pixel 702 (i, j + 1) and the pixel 702 (i, j + 2), their respective cross sections are shown in FIG. Shown side by side. However, the functional film 770P is not shown in FIG.

The display element 550 (i, j) includes a conductive film 551_0 (i, j), a conductive film 551_1 (i, j), and a conductive film 551_2 (i, j) as electrodes 551 (i, j). The display element 550 (i, j + 1) includes a conductive film 551_0 (i, j + 1) and a conductive film 551_1 (i, j + 1) as the electrode 551 (i, j + 1). The display element 550 (i, j + 2) includes a conductive film 551_0 (i, j + 2), a conductive film 551_1 (i, j + 2), and a conductive film 551_2 (i, j + 2) as electrodes 551 (i, j + 2).

12A, 12B, 14A, and 14B are cross-sectional views illustrating a method for manufacturing a display panel.

FIG. 12A illustrates a state in which a conductive film 551_0, a conductive film 551_1 above and a conductive film 551_2 are formed over the insulating film 521B. As each material, for example, the materials shown as the conductive film 551_0 (i, j), the conductive film 551_1 (i, j), and the conductive film 551_2 (i, j) in Embodiment 1 can be used.

The film thicknesses of the conductive film 551_1 and the conductive film 551_2 can be set, for example, in the same manner as in Embodiment 1 and the examples shown in the examples.

When the conductive film 551_1 and the conductive film 551_2 are etched with a predetermined solution used for wet etching under the same conditions, a material whose etching rate is lower than that of the conductive film 551_2 is preferably used. Alternatively, the conductive film 551_1 preferably has a lower etching rate when the same solution is used than the conductive film 551_2.

For example, the conductive film 551_1 is formed by sputtering using argon gas and oxygen gas using a target having 85% In ₂ O ₃ , 10% SnO ₂ , and 5% SiO ₂ in a weight ratio, for example. The film can be formed with a thickness of 50 nm. The conductive film 551_2 can be formed with a film thickness of 62 nm by a sputtering method using an argon gas and an oxygen gas with a target having a composition of 25% In ₂ O ₃ and 75% ZnO, for example. .

At this time, the etching rate in the case of using oxalic acid at room temperature (a mixed solution containing 5% by weight or less of oxalic acid and 95% by weight or more of water) is 227 nm / min in the conductive film 551_1, and the conductive film 551_2. Is larger than 400 nm / min.

Etching rate when using mixed acid aluminum liquid at room temperature (mixed solution containing less than 80% phosphoric acid, less than 10% acetic acid, less than 5% nitric acid and 5% by weight water) In the conductive film 551_1, it is 5 nm / min, and in the conductive film 551_2, it is higher than 350 nm / min.

The etching rate when 0.85% phosphoric acid at room temperature obtained by diluting 85% phosphoric acid to 1/100 with water is 1 nm / min for the conductive film 551_1 and 66.9 nm for the conductive film 551_2. / Min.

For example, the conductive film 551_1 is formed using a crystalline conductive film containing In ₂ O ₃ and SnO _2, and the conductive film 551_2 is an amorphous film containing In ₂ O ₃ , SnO ₂ , and SiO ₂ . You may form with a electrically conductive film.

For example, the conductive film 551_1 may be formed using a conductive film containing In ₂ O ₃ and ZnO, and the conductive film 551_2 may be formed using a conductive film containing In ₂ O ₃ and ZnO whose ZnO content is lower than that of the conductive film 551_1.

Note that the etching of the conductive film 551_1 and the conductive film 551_2 is not limited to wet etching and may be dry etching. However, when the conductive film 551_1 and the conductive film 551_2 are dry-etched under the same conditions, it is preferable to use a material whose etching rate is lower than that of the conductive film 551_2. Alternatively, the conductive film 551_1 preferably has a lower etching rate in one etching atmosphere than the conductive film 551_2.

As an etching gas used for dry etching, a gas containing chlorine (chlorine-based gas such as chlorine (Cl ₂ ), boron trichloride (BCl ₃ ), silicon tetrachloride (SiCl ₄ ), carbon tetrachloride (CCl ₄ ), or the like) Is preferred.

Other etching gases used for dry etching include fluorine-containing gases (fluorine-based gases such as carbon tetrafluoride (CF ₄ ), sulfur hexafluoride (SF ₆ ), nitrogen trifluoride (NF ₃ ), trifluoro Methane (CHF ₃ ), hydrogen bromide (HBr), oxygen (O ₂ ), a gas obtained by adding a rare gas such as helium (He) or argon (Ar) to these gases, or the like can be used.

Next, a resist mask 541 is formed over the conductive film 551_2 (see FIG. 12B).

The resist mask 541 includes a region where the thickness of the resist is small in a region overlapping with the pixel 702 (i, j + 1). A region overlapping with the pixel 702 (i, j + 1) can be said to be a concave portion. In this embodiment mode, exposure using a multi-tone (high-tone) mask is used for forming the resist mask 541. At this time, resist masks 541 having different resist thicknesses can be formed.

Exposure using a multi-tone (high-tone) mask will be described.

First, a resist is formed to form a resist mask. As the resist, a positive resist or a negative resist can be used. Here, a positive resist is used. The resist may be formed by a spin coating method or may be selectively formed by an ink jet method. When the resist is selectively formed by an ink-jet method, formation of the resist in unnecessary portions can be reduced, so that waste of materials can be reduced.

Next, using a multi-tone mask as an exposure mask, the resist is irradiated with light to expose the resist.

A multi-tone mask is a mask capable of performing three exposure levels on an exposed portion, an intermediate exposed portion, and an unexposed portion, and is an exposure mask in which transmitted light has a plurality of intensities. With a single exposure and development process, a resist mask having a plurality of thickness regions can be formed. Therefore, by using a multi-tone mask, the number of lithography processes can be reduced and the process can be simplified.

Typical examples of the multi-tone mask include a gray-tone mask 10a as shown in FIG. 13A and a half-tone mask 10b as shown in FIG.

As shown in FIG. 13A, the gray tone mask 10 a includes a light transmissive substrate 13 and a light shielding film 15 formed on the light transmissive substrate 13. Further, the gray tone mask 10a includes a light shielding part 17 provided with a light shielding film, a diffraction grating part 18 provided by a pattern of the light shielding film, and a transmission part 19 provided with no light shielding film.

The light transmissive substrate 13 can be a light transmissive substrate such as quartz. The light shielding film 15 can be formed using a light shielding material that absorbs light, such as chromium or chromium oxide.

FIG. 13B shows light transmittance TR when the gray-tone mask 10a is irradiated with exposure light. As shown in FIG. 13B, the light transmittance 21 of the light shielding portion 17 is 0%. In the transmission part 19, the light transmittance 21 is approximately 100%. In the diffraction grating portion 18, the light transmittance 21 can be adjusted in the range of 10% to 70%. In the diffraction grating portion 18, the interval between the light transmitting portions such as slits, dots, and meshes is set to be equal to or less than the resolution limit of light used for exposure. And the diffraction grating part 18 can control the transmittance | permeability of light by adjusting the space | interval and pitch of a slit, a dot, or a mesh. Note that the diffraction grating unit 18 can use either a periodic slit, a dot, or a mesh, or an aperiodic slit, dot, or mesh.

As shown in FIG. 13C, the halftone mask 10 b includes a light transmissive substrate 13 and a light shielding film 25 and a semi-light transmissive film 23 formed on the light transmissive substrate 13. The halftone mask 10b includes a light shielding portion 27 provided with the light shielding film 25 and the semi-light transmission film 23, a semi-light transmission portion 28 provided with the semi-light transmission film 23 without the light shielding film 25, and the light shielding. It has a transmission part 29 where the film 25 and the semi-light transmission film 23 are not provided.

FIG. 13D shows the light transmittance when the halftone mask 10b is irradiated with exposure light.
As shown in FIG. 13D, the light transmittance 31 is 0% in the light shielding portion 27, and the light transmittance 31 is substantially 100% in the transmissive portion 29. In the semi-light transmitting portion 28, the light transmittance 31 can be adjusted in the range of 10% to 70%. In the semi-light transmitting portion 28, the light transmittance can be controlled by the material of the semi-light transmitting film 23.

For the semi-light transmission film 23, MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like can be used. The light shielding film 25 can be made of a light shielding material that absorbs light, such as chromium or chromium oxide.

By developing after exposure using a multi-tone mask, a resist mask having regions with different thicknesses can be formed as shown in FIG.

Note that, as the multi-tone mask, two types of resist film thicknesses are shown, but the embodiment of the present invention is not limited to this. By using the diffraction grating portion 18 or the semi-light transmission film 23 having a plurality of light transmittances, a resist having three or more kinds of film thicknesses can be formed.

Next, part of the conductive film 551_0, the conductive film 551_1, and the conductive film 551_2 is removed using the resist mask 541 as a mask. In the pixel 702 (i, j), the conductive film 551_0 (i, j) The conductive film 551_1 (i, j) and the conductive film 551_2 (i, j) are formed. The same applies to the pixel 702 (i, j + 1) and the pixel 702 (i, j + 2). Note that a conductive film 551_2 (i, j + 1) is formed in the pixel 702 (i, j + 1), and the conductive film 551_2 (i, j + 1) is removed in the following steps.

Wet etching can be used for processing the conductive films 551_0, 551_1, and 551_2. However, the processing method is not limited to this, and dry etching may be used, for example.

Next, a part of the resist mask 541 is removed by retreating, and the area of the resist mask is reduced. Here, the term “retreat” means to reduce the film thickness. By the removal, a resist mask 542 is formed (see FIG. 14A).

An ashing apparatus can be used to remove part of the resist mask. Ashing may reduce the area of the resist mask and reduce the thickness of the resist mask.

For example, as the ashing, photoexcited ashing may be used in which a gas such as oxygen or ozone is irradiated with light such as ultraviolet rays, and the gas and the organic substance are chemically reacted to remove the organic substance. As ashing, plasma ashing may be used in which a gas such as oxygen or ozone is turned into plasma at a high frequency and the organic matter is removed using the plasma.

In the resist mask 541 where the resist mask is thin, the resist is removed by the ashing, and the resist mask is separated as shown in FIG. Accordingly, the resist mask in a region overlapping with the pixel 702 (i, j + 1) is removed, and the conductive film 551_2 (i, j + 1) of the pixel 702 (i, j + 1) is exposed.

Next, the conductive film 551_2 (i, j + 1) is etched using the resist mask 542 as a mask.

For the etching, for example, room temperature oxalic acid, room temperature mixed acid aluminum, or room temperature solution in which 85% phosphoric acid is diluted to 1% can be used. At this time, since the conductive film 551_2 (i, i + 1) has a higher etching rate than the conductive film 551_2 (i, j), the conductive film 551_2 (i, j) can be preferably processed without being lost.

Next, the resist mask 542 is removed (see FIG. 14B).

Next, the light-emitting layer 553 and the electrode 552 are formed. Further, the substrate 570 is bonded to the substrate 770 using the bonding layer 505. Further, a functional film 770P is formed. Through such a process, the display panel 700_1 can be manufactured.

(Embodiment 3)
In this embodiment, a display panel different from that in Embodiment 1 is described.

<Pixel Configuration Example 5>
In the display panel 700_2 of one embodiment of the present invention, the light-emitting layer 553 (j) includes a material stacked so as to emit red light, and the light-emitting layer 553 ( A material stacked to emit blue light at j + 1) can be used for the light-emitting layer 553 (j + 2) (see FIGS. 15A and 15B).

The pixel 702 (i, j) includes a light emitting layer 553 (j), the pixel 702 (i, j + 1) includes a light emitting layer 553 (j + 1), and the pixel 702 (i, j + 2) includes a light emitting layer 553 (j).

Accordingly, red display can be performed using the pixel 702 (i, j). Green display can be performed using the pixel 702 (i, j + 1). Blue display can be performed using the pixel 702 (i, j + 2).

At this time, the optical distances in the film thickness direction of the light-emitting layer 553 (j), the light-emitting layer 553 (j + 1), and the light-emitting layer 553 (j + 2) are made equal to those in the pixel configuration example 1.

As illustrated in FIG. 15B, the coloring film CF1 (R), the coloring film CF1 (G), and the coloring film CF1 (B) may not be provided. The other structure of the display element 550 is the same as that of the display panel 700.

With the configuration of each sub-pixel based on the film thickness, the pixel 702 (i, j) has a higher red color purity, the pixel 702 (i, j + 1) has a higher green color purity, and the pixel 702 (i, j + 1) has a blue color purity. The color purity of the display can be increased and any display can be made vivid.

<Pixel Configuration Example 6>
Further, as in the display panel 700_4 (see FIG. 16A), the light L2 from the display element 550 (i, j) is in a direction opposite to the direction in which the pixel circuit 530 (i, j) is provided. It is good also as a structure inject | emitted. At this time, the pixel circuit 530 (i, j) is provided so that the electrode 552 having light reflectivity is sandwiched between the electrode 551 (i, j). At this time, the colored film CF1 (R) can be provided in the path through which the light L2 is emitted. The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

At this time, it is preferable that the light-emitting layer 553 be provided between the conductive film 551_1 (i, j) and the conductive film 551_0 (i, j) in the display element 550 (i, j) (FIG. 16). (See (B)). The same applies to the display element 550 (i, j + 1) and the display element 550 (i, j + 2).

In the display panel 700_4, since the pixel circuit 530 (i, j) is disposed at a position where the emitted light is not blocked, the aperture ratio can be improved as compared with the display panel 700.

(Embodiment 4)
In this embodiment, a metal oxide that can be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention will be described. Note that in the case where a metal oxide is used for the semiconductor layer of the transistor, the metal oxide may be read as an oxide semiconductor.

An oxide semiconductor is classified into a single crystal oxide semiconductor and a non-single-crystal oxide semiconductor. As the non-single-crystal oxide semiconductor, a CAAC-OS (c-axis-aligned crystal oxide semiconductor), a polycrystalline oxide semiconductor, an nc-OS (nanocrystalline oxide semiconductor), a pseudo-amorphous oxide semiconductor (a-like oxide OS) : Amorphous-like oxide semiconductor) and amorphous oxide semiconductor.

Alternatively, a CAC-OS (Cloud-Aligned Composite) may be used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention.

Note that the above-described non-single-crystal oxide semiconductor or CAC-OS can be preferably used for the semiconductor layer of the transistor disclosed in one embodiment of the present invention. As the non-single-crystal oxide semiconductor, nc-OS or CAAC-OS can be preferably used.

Note that in one embodiment of the present invention, a CAC-OS is preferably used as the semiconductor layer of the transistor. With the use of the CAC-OS, high electrical characteristics or high reliability can be imparted to the transistor.

Details of the CAC-OS will be described below.

The CAC-OS or the CAC-metal oxide has a conductive function in part of the material and an insulating function in part of the material, and has a function as a semiconductor in the whole material. Note that in the case where a CAC-OS or a CAC-metal oxide is used for a channel formation region of a transistor, the conductive function is a function of flowing electrons (or holes) serving as carriers, and the insulating function is a carrier. This function prevents electrons from flowing. A function of switching (a function of turning on / off) can be imparted to CAC-OS or CAC-metal oxide by causing the conductive function and the insulating function to act complementarily. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.

In addition, the CAC-OS or the CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-described conductive function, and the insulating region has the above-described insulating function. In the material, the conductive region and the insulating region may be separated at the nanoparticle level. In addition, the conductive region and the insulating region may be unevenly distributed in the material, respectively. In addition, the conductive region may be observed with the periphery blurred and connected in a cloud shape.

In CAC-OS or CAC-metal oxide, the conductive region and the insulating region are dispersed in the material with a size of 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm, respectively. There is.

Further, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide includes a component having a wide gap caused by an insulating region and a component having a narrow gap caused by a conductive region. In the case of the configuration, when the carrier flows, the carrier mainly flows in the component having the narrow gap. In addition, the component having a narrow gap acts in a complementary manner to the component having a wide gap, and the carrier flows through the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the CAC-OS or the CAC-metal oxide is used for a channel formation region of a transistor, high current driving force, that is, high on-state current and high field-effect mobility can be obtained in the on-state of the transistor.

That is, CAC-OS or CAC-metal oxide can also be referred to as a matrix composite (metal matrix composite) or a metal matrix composite (metal matrix composite).

The CAC-OS is one structure of a material in which an element constituting a metal oxide is unevenly distributed with a size of 0.5 nm to 10 nm, preferably, 1 nm to 2 nm or near. In the following, in a metal oxide, one or more metal elements are unevenly distributed, and a region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm or near. The mixed state is also called mosaic or patch.

Note that the metal oxide preferably contains at least indium. In particular, it is preferable to contain indium and zinc. In addition, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. One kind or plural kinds selected from may be included.

For example, a CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OSs may be referred to as CAC-IGZO in particular) is an indium oxide (hereinafter referred to as InO). _X1 (X1 is greater real than 0) and.), or indium zinc oxide _{(hereinafter, in X2 Zn Y2 O Z2 (} X2, Y2, and Z2 is larger real than 0) and a.), gallium An oxide (hereinafter referred to as GaO _X3 (X3 is a real number greater than 0)) or a gallium zinc oxide (hereinafter referred to as Ga _X4 Zn _Y4 O _Z4 (where X4, Y4, and Z4 are greater than 0)) to.) and the like, the material becomes mosaic by separate into, mosaic _{InO X1} or _in X2 _Zn Y2 _{O Z2,} is a configuration in which uniformly distributed in the film (hereinafter, click Also called Udo-like.) A.

That, CAC-OS includes a region _{GaO X3} is the main _component, and In _{X2 Zn} Y2 _{O Z2,} or _{InO X1} is the main component region is a composite metal oxide having a structure that is mixed. Note that in this specification, for example, the first region indicates that the atomic ratio of In to the element M in the first region is larger than the atomic ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that in the second region.

Note that IGZO is a common name and sometimes refers to one compound of In, Ga, Zn, and O. As a typical example, InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (−1 ≦ x0 ≦ 1, m0 is an arbitrary number) A crystalline compound may be mentioned.

The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC (c-axis aligned crystal) structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented in the ab plane.

On the other hand, CAC-OS relates to a material structure of a metal oxide. CAC-OS refers to a region that is observed in the form of nanoparticles mainly composed of Ga in a material structure including In, Ga, Zn, and O, and nanoparticles that are partially composed mainly of In. The region observed in a shape is a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in the CAC-OS, the crystal structure is a secondary element.

Note that the CAC-OS does not include a stacked structure of two or more kinds of films having different compositions. For example, a structure composed of two layers of a film mainly containing In and a film mainly containing Ga is not included.

Incidentally, GaOX3 is a region which is a main _component, and In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component region, in some cases clear boundary can not be observed.

Instead of gallium, selected from aluminum, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. In the case where one or a plurality of types are included, the CAC-OS includes a region that is observed in a part of a nanoparticle mainly including the metal element and a nanoparticle mainly including In. The region observed in the form of particles refers to a configuration in which each region is randomly dispersed in a mosaic shape.

The CAC-OS can be formed by a sputtering method, for example, without heating the substrate. In the case where a CAC-OS is formed by a sputtering method, any one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as a deposition gas. Good. Further, the flow rate ratio of the oxygen gas to the total flow rate of the deposition gas during film formation is preferably as low as possible. .

The CAC-OS has a feature that a clear peak is not observed when measurement is performed using a θ / 2θ scan by an out-of-plane method, which is one of X-ray diffraction (XRD) measurement methods. Have. That is, it can be seen from X-ray diffraction that no orientation in the ab plane direction and c-axis direction of the measurement region is observed.

In addition, in the CAC-OS, an electron diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam) has a ring-like region having a high luminance and a plurality of bright regions in the ring region. A point is observed. Therefore, it can be seen from the electron beam diffraction pattern that the crystal structure of the CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in a CAC-OS in an In—Ga—Zn oxide, a region in which GaO _X3 is a main component is obtained by EDX mapping obtained by using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is unevenly distributed and mixed.

CAC-OS has a structure different from that of an IGZO compound in which metal elements are uniformly distributed, and has a property different from that of an IGZO compound. That is, in the CAC-OS, a region in which GaO _X3 or the like is a main component and a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component are phase-separated from each other, and a region in which each element is a main component. Has a mosaic structure.

Here, the region containing In _X2 Zn _Y2 O _Z2 or InO _X1 as a main component is a region having higher conductivity than a region containing GaO _X3 or the like as a main component. _That, In _{X2 Zn} Y2 _{O Z2} or _{InO X1,} is an area which is the main component, by carriers flow, expressed the conductivity of the oxide semiconductor. Accordingly, a region where In _X2 Zn _Y2 O _Z2 or InO _X1 is a main component is distributed in a cloud shape in the oxide semiconductor, whereby high field-effect mobility (μ) can be realized.

On the other hand, areas such GaOX3 is the main _component, as compared to the In _{X2 Zn} Y2 _{O Z2} or _{InO X1} is the main component area, it is highly regions insulating. That is, a region containing GaOX3 or the like as a main component is distributed in the oxide semiconductor, whereby leakage current can be suppressed and a favorable switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by GaO _{X3 and the} like and the conductivity caused by In _X2 Zn _Y2 O _Z2 or InO _X1 act in a complementary manner, resulting in high An on-current (Ion) and high field effect mobility (μ) can be realized.

In addition, a semiconductor element using a CAC-OS has high reliability. Therefore, the CAC-OS is optimal for various semiconductor devices including a display.

This embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 5)
In this embodiment, the structure of the display device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 17 is a block diagram illustrating a structure of a display device of one embodiment of the present invention.

FIG. 18A is a block diagram illustrating a structure different from the structure of the display panel illustrated in FIG. 18B-1 to 18B-3 illustrate the appearance of a display device of one embodiment of the present invention.

<Configuration example of display device>
The display device described in this embodiment includes a control portion 238 and a display panel 700 (see FIG. 17).

<Control unit 238>
The control unit 238 has a function to which the image information V1 and the control information SS are supplied.

The control unit 238 has a function of generating information V12 based on the image information V1. The control unit 238 has a function of supplying the information V12.

For example, the control unit 238 includes a decompression circuit 234 and an image processing circuit 235M.

<Display panel 700>
The display panel 700 has a function of being supplied with the information V12. The display panel 700 includes a pixel 702 (i, j).

The pixel 702 (i, j) includes a display element 550 (i, j).

The display element 550 (i, j) has a function of displaying based on the information V12, and the display element 550 (i, j) is a light emitting element.

For example, the display panel described in Embodiment 1 can be used for the display panel 700. Alternatively, the display panel 700B can be used. For example, a television receiver system (see FIG. 18B-1), a video monitor (see FIG. 18B-2), a notebook computer (see FIG. 18B-3), or the like can be provided. .

Thereby, image information can be displayed using a display element. As a result, a novel display device that is highly convenient or reliable can be provided.

<Extension circuit 234>
The expansion circuit 234 has a function of expanding the image information V1 supplied in a compressed state. The decompression circuit 234 includes a storage unit. The storage unit has a function of storing, for example, decompressed image information.

<Image processing circuit 235M>
The image processing circuit 235M includes a region, for example.

The area has a function of storing information included in the image information V1, for example.

The image processing circuit 235M includes, for example, a function of correcting the image information V1 based on a predetermined characteristic curve to generate the information V12 and a function of supplying the information V12. Specifically, a function for generating the information V12 is provided so that the display element 550 (i, j) displays a good image.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 6)
In this embodiment, the structure of the input / output device of one embodiment of the present invention is described with reference to FIGS.

FIG. 19 is a block diagram illustrating a structure of the input / output device of one embodiment of the present invention.

<Configuration example of input / output device>
The input / output device described in this embodiment includes an input unit 240 and a display unit 230 (see FIG. 19). For example, the display panel 700 described in Embodiment 1 can be used for the display portion 230.

The input unit 240 includes a detection area 241. The input unit 240 has a function of detecting an object close to the detection area 241.

The detection region 241 includes a region overlapping with the pixel 702 (i, j).

<Input unit 240>
The input unit 240 includes a detection area 241. The input unit 240 can include an oscillation circuit OSC and a detection circuit DC (see FIG. 19).

<Detection area 241>
The detection region 241 can include, for example, one or more detection elements.

The detection region 241 includes a group of detection elements 775 (g, 1) to detection elements 775 (g, q) and another group of detection elements 775 (1, h) to detection elements 775 (p, h). (See FIG. 19). Note that g is an integer of 1 to p, h is an integer of 1 to q, and p and q are integers of 1 or more.

The group of sensing elements 775 (g, 1) to 775 (g, q) includes the sensing elements 775 (g, h) and are arranged in the row direction (direction indicated by an arrow R2 in the drawing). Note that the direction indicated by the arrow R2 in FIG. 19 may be the same as or different from the direction indicated by the arrow R1 in FIG.

Further, another group of the detection elements 775 (1, h) to 775 (p, h) includes the detection elements 775 (g, h), and the column direction (in the drawing, indicated by an arrow C2) that intersects the row direction. (Direction shown).

<Sensing element>
The detection element has a function of detecting an adjacent pointer. For example, a finger or a stylus pen can be used as the pointer. For example, a metal piece or a coil can be used for the stylus pen.

Specifically, a capacitive proximity sensor, an electromagnetic induction proximity sensor, an optical proximity sensor, a resistive proximity sensor, or the like can be used as the detection element.

A plurality of types of sensing elements can also be used in combination. For example, a detection element that detects a finger and a detection element that detects a stylus pen can be used in combination. Thereby, the type of the pointer can be determined. Alternatively, different instructions can be associated with the detection information based on the determined type of pointer. Specifically, when it is determined that a finger is used as the pointer, the detection information can be associated with the gesture. Alternatively, when it is determined that the stylus pen is used as the pointer, the detection information can be associated with the drawing process.

Specifically, a finger can be detected by using a capacitive or optical proximity sensor. Alternatively, the stylus pen can be detected using an electromagnetic induction type or optical type proximity sensor.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 7)
In this embodiment, the structure of the input / output panel of one embodiment of the present invention is described with reference to FIGS.

FIG. 20 illustrates the structure of an input / output panel that can be used for the input / output device of one embodiment of the present invention. FIG. 20A is a top view of the input / output panel. 20B and 20C are projection views for explaining a part of FIG.

FIG. 21 illustrates a structure of an input / output panel that can be used in the input / output device of one embodiment of the present invention. FIG. 21A is a top view of adjacent portions of the control line and the detection signal line. FIG. 21B is a projection diagram schematically illustrating the electric field generated in the adjacent portion.

<Configuration example of input / output panel>
The input / output panel described in this embodiment is different from, for example, the display panel 700 described in Embodiment 1 in that a detection region 241 is provided. Here, different portions will be described in detail, and the above description will be applied to portions that can use the same configuration.

<Detection area 241>
The detection region 241 includes a control line CL (g), a detection signal line ML (h), and a conductive film. The conductive film includes a sensing element 775 (g, h) (see FIGS. 19 and 20A).

For example, a conductive film divided into a plurality of regions can be used for the detection region 241 (see FIG. 19 or FIG. 20). Thereby, different potentials can be supplied to each of the plurality of regions.

Specifically, a conductive film that is divided into a conductive film that can be used for the control line CL (g) and a conductive film that can be used for the detection signal line ML (h) is used for the detection region 241. it can. For example, a rectangular conductive film can be used for each of the conductive films divided into a plurality of regions (see FIGS. 21A, 21B, 4A, and 5). Thereby, the divided conductive film can be used as the electrode of the sensing element. Alternatively, a different potential can be supplied to the control line. Alternatively, an in-cell input / output panel can be provided. Or the member which comprises an input-output panel can be reduced.

For example, a conductive film that can be used for the control line CL (g), a conductive film that can be used for the detection signal line ML (h), and a conductive film that can be used for the detection signal line ML (h + 1). The divided conductive films are adjacent to each other in the adjacent portion X0 (see FIG. 20A, FIG. 20C, or FIG. 21).

The detection element 775 (g, h) is electrically connected to the control line CL (g) and the detection signal line ML (h) (see FIG. 20A).

Note that the control line CL (g) has a function of supplying a control signal, and the detection signal line ML (h) has a function of supplying a detection signal.

<Detection element 775 (g, h)>
The detection element 775 (g, h) has a function of supplying a detection signal that changes based on a control signal and a distance from an area close to the region overlapping with the pixel 702 (i, j). In addition, the detection element 775 (g, h) includes an electrode C (g) and an electrode M (h) (see FIG. 21B).

The electrode C (g) includes a light-transmitting region in a region overlapping with the pixel 702 (i, j), and the electrode C (g) is electrically connected to the control line CL (g). The electrode C (g) can be referred to as a control electrode. Further, the same conductive film as that used for the control line CL (g) can be used for the electrode C (g), so that the control line CL (g) and the electrode C (g) can be integrated.

The electrode M (h) includes a light-transmitting region in a region overlapping with the pixel 702 (i, j) (see FIGS. 4A and 5). The electrode M (h) is electrically connected to the detection signal line ML (h). In addition, the electrode M (h) is disposed so as to form an electric field between the electrode C (g) and a part of the electrode M (h) that is blocked by an element close to the region overlapping with the pixel 702 (i, j) (FIG. 21). (See (B)). The electrode M (h) can be referred to as a detection electrode. Further, the same conductive film as that used for the detection signal line ML (h) is used for the electrode M (h), so that the detection signal line ML (h) and the electrode M (h) can be integrated.

For example, when a control signal is supplied to the control line CL (g), an electric field is formed between the electrode C (g) and the electrode M (h) or between the electrode C (g) and the electrode M (h + 1) (FIG. 21 (B)). For example, a part of the electric field formed between the electrode C (g) and the electrode M (h) is blocked by a nearby finger or the like.

Accordingly, it is possible to detect an object that is close to a region overlapping with the display unit while displaying image information using the display unit. Alternatively, position information can be input using a finger or the like that is brought close to the display portion as a pointer. Alternatively, the position information can be associated with image information displayed on the display unit. As a result, a novel input / output device that is highly convenient or reliable can be provided.

<Oscillation circuit OSC>
The oscillation circuit OSC is electrically connected to the control line CL (g) and has a function of supplying a control signal. For example, a rectangular wave, a sawtooth wave, a triangular wave, or the like can be used as the control signal.

<Detection circuit DC>
The detection circuit DC is electrically connected to the detection signal line ML (h) and has a function of supplying a detection signal based on a change in potential of the detection signal line ML (h). The detection signal includes, for example, position information P1.

<Display unit 230>
For example, the display panel described in Embodiment 1 can be used for the display portion 230. Alternatively, the display device described in Embodiment 5 can be used for the display portion 230.

<Detection element 775 (g, h)>
The detection element 775 (g, h) includes an electrode C (g) and a detection signal line ML (h).

For example, a light-transmitting conductive film can be used for the electrode C (g) and the detection signal line ML (h). Alternatively, a conductive film including an opening in a region overlapping with the pixel 702 (i, j) can be used for the electrode C (g) and the detection signal line ML (h). Accordingly, it is possible to detect an object close to a region overlapping with the display panel without blocking the display on the display panel.

The detection region 241 includes a group of detection elements 775 (g, 1) to detection elements 775 (g, q) and another group of detection elements 775 (1, h) to detection elements 775 (p, h). (See FIG. 19). Note that g is an integer of 1 to p, h is an integer of 1 to q, and p and q are integers of 1 or more.

The group of sensing elements 775 (g, 1) to 775 (g, q) includes the sensing elements 775 (g, h) and are arranged in the row direction (direction indicated by an arrow R2 in the drawing). Note that the direction indicated by the arrow R2 in FIG. 19 may be the same as or different from the direction indicated by the arrow R1 in FIG.

Further, another group of the detection elements 775 (1, h) to 775 (p, h) includes the detection elements 775 (g, h), and the column direction (in the drawing, indicated by an arrow C2) that intersects the row direction. (Direction shown).

The group of sensing elements 775 (g, 1) to 775 (g, q) arranged in the row direction includes an electrode C (g) electrically connected to the control line CL (g) (FIG. 20 (B) or FIG. 20 (C)). For example, a conductive film that can be formed in the same step can be used for the control line CL (g) and the electrode C (g).

Another group of the detection elements 775 (1, h) to 775 (p, h) arranged in the column direction has electrodes M (h) electrically connected to the detection signal lines ML (h). Including. For example, a conductive film that can be formed in the same process can be used for the detection signal line ML (h) and the electrode M (h).

The detection signal line ML (h) includes a conductive film BR (g, h) (see FIG. 20B and FIG. 6). The conductive film BR (g, h) includes a region overlapping with the control line CL (g).

Note that the detection element 775 (g, h) includes an insulating film. The insulating film includes a region sandwiched between the detection signal line ML (h) and the conductive film BR (g, h). Thereby, short circuit of the detection signal line ML (h) and the conductive film BR (g, h) can be prevented.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 8)
The display panel of one embodiment of the present invention may have a structure different from those in Embodiments 1 to 7.

In this embodiment, a display panel having both a reflective display element 750 (i, j) using a layer containing a liquid crystal material and a display element 550 (i, j) having a function of emitting light. The structure of 700_3 will be described with reference to FIGS.

The display panel 700_3 has a function of acquiring information V11 and information V12 from an arithmetic device or the like. The arithmetic device can generate the information V11 and the information V12 so that the display panel 700_3 can display an image or the like by a desired display method. For example, moving image information is included in the information V11, still image information is included in the information V12, and the like.

The display panel 700_3 displays the display element 750 (i, j) based on the information V11, and displays the display element 550 (i, j) based on the information V12.

FIG. 22 is a block diagram illustrating a structure of a display device of one embodiment of the present invention. The display device has a display panel.

FIG. 23 is a block diagram illustrating a structure of a display panel of a display device of one embodiment of the present invention. FIG. 23 is a block diagram illustrating a configuration different from the configuration shown in FIG.

FIG. 24 illustrates a structure of a display panel that can be used for the display device of one embodiment of the present invention. FIG. 24A is a top view of the display panel, and FIG. 24B is a top view illustrating part of the pixels of the display panel illustrated in FIG. FIG. 24C is a schematic diagram illustrating the structure of the pixel illustrated in FIG.

25 and 26 are cross-sectional views illustrating the structure of the display panel. 25A is a cross-sectional view taken along cutting line X1-X2, cutting line X3-X4, and cutting line X5-X6 in FIG. 24A. FIG. 25B is a partial view of FIG. It is a figure explaining.

26A is a cross-sectional view taken along cutting lines X7-X8 and X9-X10 in FIG. 24A, and FIG. 26B is a diagram for explaining part of FIG.

27A is a bottom view illustrating part of the pixels of the display panel illustrated in FIG. 24B, and FIG. 27B is illustrated with a part of the structure illustrated in FIG. 27A omitted. FIG.

FIG. 28 is a circuit diagram illustrating a structure of a pixel circuit included in the display panel of one embodiment of the present invention.

FIG. 29 is a schematic diagram illustrating the shape of a light reflecting film that can be used for a pixel of a display panel.

In the present specification, a variable having an integer value of 1 or more may be used for the sign. For example, (p) including a variable p that takes an integer value of 1 or more may be used as a part of a code that identifies any of the maximum p components. Further, for example, a variable m that takes an integer value of 1 or more and (m, n) including a variable n may be used as part of a code that identifies any of the maximum m × n components.

<Configuration Example 8 of Display Panel>
A display panel 700_3 described in this embodiment includes a display region 231 (see FIG. 22). In addition, the display panel 700_3 can include the driver circuit GD or the driver circuit SD.

In addition, the display panel can include a plurality of driver circuits. For example, the display panel 700_3B includes a driver circuit GDA and a driver circuit GDB (see FIG. 23).

<Display area 231>
The display region 231 is scanned with a group of a plurality of pixels 702 (i, 1) to 702 (i, n) and another group of a plurality of pixels 702 (1, j) to 702 (m, j). Line G1 (i) (see FIG. 22, FIG. 27 or FIG. 28). In addition, the scanning line G2 (i), the wiring CSCOM, the third conductive film ANO, and the signal line S2 (j) are included. Note that i is an integer of 1 to m, j is an integer of 1 to n, and m and n are integers of 1 or more.

A group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes a pixel 702 (i, j), and a group of the plurality of pixels 702 (i, 1) to 702 (i, n) includes Arranged in the row direction (direction indicated by arrow R1 in the figure).

The other group of the plurality of pixels 702 (1, j) to 702 (m, j) includes the pixel 702 (i, j), and the other group of the plurality of pixels 702 (1, j) to 702 (m , J) are arranged in a column direction (direction indicated by an arrow C1 in the drawing) intersecting the row direction.

The scan line G1 (i) and the scan line G2 (i) are electrically connected to a group of the plurality of pixels 702 (i, 1) to 702 (i, n) arranged in the row direction.

Another group of the plurality of pixels 702 (1, j) to 702 (m, j) arranged in the column direction is electrically connected to the signal line S1 (j) and the signal line S2 (j). .

<Drive circuit GD>
The drive circuit GD has a function of supplying a selection signal based on the control information.

For example, a function of supplying a selection signal to one scanning line at a frequency of 30 Hz or higher, preferably 60 Hz or higher is provided based on the control information. Thereby, a moving image can be displayed smoothly.

For example, it has a function of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute based on the control information. Thereby, a still image can be displayed in a state where flicker is suppressed.

For example, when a plurality of drive circuits are provided, the frequency with which the drive circuit GDA supplies the selection signal and the frequency with which the drive circuit GDB supplies the selection signal can be different. Specifically, the selection signal can be supplied to the area where the moving image is smoothly displayed at a higher frequency than the area where the still image is displayed with the flicker suppressed.

<Drive circuit SD, drive circuit SD1, drive circuit SD2>
The drive circuit SD includes a drive circuit SD1 and a drive circuit SD2. The drive circuit SD1 has a function of supplying an image signal based on the information V11, and the drive circuit SD2 has a function of supplying an image signal based on the information V12 (see FIG. 22).

The drive circuit SD1 has a function of generating an image signal to be supplied to a pixel circuit that is electrically connected to one display element. Specifically, it has a function of generating a signal whose polarity is inverted. Thereby, for example, a liquid crystal display element can be driven.

The drive circuit SD2 has a function of generating an image signal to be supplied to a pixel circuit that is electrically connected to another display element that performs display using a method different from that of one display element. For example, an organic EL element can be driven.

For example, various sequential circuits such as a shift register can be used for the drive circuit SD.

For example, an integrated circuit in which the drive circuit SD1 and the drive circuit SD2 are integrated can be used for the drive circuit SD. Specifically, an integrated circuit formed on a silicon substrate can be used for the drive circuit SD.

For example, an integrated circuit can be implemented as a terminal using a COG (Chip on glass) method or a COF (Chip on Film) method. Specifically, an integrated circuit can be mounted on a terminal using an anisotropic conductive film.

<Pixel configuration example>
The pixel 702 (i, j) includes a display element 750 (i, j), a display element 550 (i, j), and a part of the functional layer 520 (FIGS. 24C, 25A, and 26). (See (A)).

<Functional layer>
The functional layer 520 includes a first conductive film, a second conductive film, an insulating film 501C, and a pixel circuit 530 (i, j) (see FIGS. 25A and 25B). . The functional layer 520 includes an insulating film 521, an insulating film 528, an insulating film 518, and an insulating film 516.

Note that the functional layer 520 includes a region sandwiched between the substrate 570 and the substrate 770.

<Insulating film 501C>
The insulating film 501C includes a region sandwiched between the first conductive film and the second conductive film, and the insulating film 501C includes an opening 591A (see FIG. 26A).

<First conductive film>
For example, the first electrode 751 (i, j) of the display element 750 (i, j) can be used for the first conductive film. The first conductive film is electrically connected to the first electrode 751 (i, j).

<Second conductive film>
For example, the conductive film 512B can be used for the second conductive film. The second conductive film includes a region overlapping with the first conductive film. The second conductive film is electrically connected to the first conductive film in the opening 591A. By the way, the first conductive film electrically connected to the second conductive film in the opening 591A provided in the insulating film 501C can be referred to as a through electrode.

The second conductive film is electrically connected to the pixel circuit 530 (i, j). For example, a conductive film functioning as a source electrode or a drain electrode of a transistor used for the switch SW1 of the pixel circuit 530 (i, j) can be used for the second conductive film.

<Pixel circuit>
The pixel circuit 530 (i, j) has a function of driving the display element 750 (i, j) and the display element 550 (i, j) (see FIG. 28).

A switch, a transistor, a diode, a resistor, an inductor, a capacitor, or the like can be used for the pixel circuit 530 (i, j).

For example, one or more transistors can be used for the switch. Alternatively, a plurality of transistors connected in parallel, a plurality of transistors connected in series, and a plurality of transistors connected in combination of series and parallel can be used for one switch.

For example, the pixel circuit 530 (i, j) includes the signal line S1 (j), the signal line S2 (j), the scanning line G1 (i), the scanning line G2 (i), the wiring CSCOM, and the third conductive film ANO. Electrically connected (see FIG. 28). Note that the conductive film 512A is electrically connected to the signal line S1 (j) (see FIGS. 26A and 28).

The pixel circuit 530 (i, j) includes a switch SW1 and a capacitor C11 (see FIG. 28).

Pixel circuit 530 (i, j) includes switch SW2, transistor M, and capacitor C12.

For example, a transistor including a gate electrode electrically connected to the scan line G1 (i) and a first electrode electrically connected to the signal line S1 (j) can be used for the switch SW1. .

The capacitor C11 includes a first electrode that is electrically connected to the second electrode of the transistor used for the switch SW1, and a second electrode that is electrically connected to the wiring CSCOM.

For example, a transistor including a gate electrode electrically connected to the scan line G2 (i) and a first electrode electrically connected to the signal line S2 (j) can be used for the switch SW2. .

The transistor M includes a gate electrode that is electrically connected to the second electrode of the transistor used for the switch SW2, and a first electrode that is electrically connected to the third conductive film ANO.

Note that a transistor including a conductive film provided so that a semiconductor film is interposed between a gate electrode and the gate electrode can be used for the transistor M. For example, a conductive film that is electrically connected to a wiring that can supply the same potential as the gate electrode of the transistor M can be used for the conductive film.

The capacitor C12 includes a first electrode that is electrically connected to the second electrode of the transistor used for the switch SW2, and a second electrode that is electrically connected to the first electrode of the transistor M. .

Note that the first electrode of the display element 750 (i, j) is electrically connected to the second electrode of the transistor used for the switch SW1. In addition, the second electrode of the display element 750 (i, j) is electrically connected to the wiring VCOM1. Accordingly, the display element 750 (i, j) can be driven.

In addition, the third electrode 551 (i, j) of the display element 550 (i, j) is electrically connected to the second electrode of the transistor M, and the fourth electrode 552 of the display element 550 (i, j). Is electrically connected to the fourth conductive film VCOM2. Thereby, the display element 550 (i, j) can be driven.

<Display element 750 (i, j)>
For example, a display element having a function of controlling reflection or transmission of light can be used for the display element 750 (i, j). Specifically, a reflective liquid crystal display element can be used for the display element 750 (i, j). Alternatively, a shutter-type MEMS display element or the like can be used. By using a reflective display element, power consumption of the display panel can be suppressed.

The display element 750 (i, j) includes a first electrode 751 (i, j), a second electrode 752, and a layer 753 containing a liquid crystal material. The second electrode 752 is disposed so that an electric field for controlling the alignment of the liquid crystal material is formed between the second electrode 752 and the first electrode 751 (i, j) (FIGS. 25A and 26A). reference).

Note that the display element 750 (i, j) includes an alignment film AF1 and an alignment film AF2. The alignment film AF2 includes a region in which a layer 753 containing a liquid crystal material is sandwiched between the alignment film AF1.

<Display element 550 (i, j)>
For example, a display element having a function of emitting light can be used for the display element 550 (i, j). Specifically, an organic EL element or the like can be used.

The display element 550 (i, j) has a function of emitting light toward the insulating film 501C (see FIG. 25A).

The display element 550 (i, j) is arranged so that the display using the display element 550 (i, j) can be visually recognized in a part of the range where the display using the display element 750 (i, j) can be visually recognized. Established. For example, the direction in which external light is incident and reflected on the display element 750 (i, j) that displays image information by controlling the intensity of reflecting external light is indicated by a dashed arrow in the figure (FIG. 26A). reference). In addition, the direction in which the display element 550 (i, j) emits light to a part of the range where the display using the display element 750 (i, j) can be visually recognized is indicated by a solid arrow in the drawing (FIG. 25 ( A)).

The display element 550 (i, j) includes a third electrode 551 (i, j), a fourth electrode 552, and a light-emitting layer 553 (j) (see FIG. 25A).

The fourth electrode 552 includes a region overlapping with the third electrode 551 (i, j).

The light-emitting layer 553 (j) includes a region sandwiched between the third electrode 551 (i, j) and the fourth electrode 552.

The third electrode 551 (i, j) is electrically connected to the pixel circuit 530 (i, j) at the connection portion 522. Note that the third electrode 551 (i, j) is electrically connected to the third conductive film ANO, and the fourth electrode 552 is electrically connected to the fourth conductive film VCOM2 (FIG. 28). reference).

<Intermediate film>
In addition, the display panel described in this embodiment includes an intermediate film 754A, an intermediate film 754B, and an intermediate film 754C.

The intermediate film 754A includes a region in which the first conductive film is sandwiched between the intermediate film 501C and the intermediate film 754A includes a region in contact with the first electrode 751 (i, j). The intermediate film 754B includes a region in contact with the conductive film 511B. The intermediate film 754C includes a region in contact with the conductive film 511C.

<Insulating film 501A>
In addition, the display panel described in this embodiment includes an insulating film 501A (see FIG. 25A).

The insulating film 501A includes a first opening 592A, a second opening 592B, and an opening 592C (see FIG. 25A or FIG. 26A).

The first opening 592A includes a region overlapping with the intermediate film 754A and the first electrode 751 (i, j) or a region overlapping with the intermediate film 754A and the insulating film 501C.

The second opening 592B includes a region overlapping with the intermediate film 754B and the conductive film 511B.

The opening 592C includes a region overlapping with the intermediate film 754C and the conductive film 511C.

The insulating film 501A includes a region in which the insulating film 501C is sandwiched between the insulating film 501B and the conductive film 511B. The insulating film 501A is in contact with the conductive film 511B in the opening 591B of the insulating film 501C. The insulating film 501A is in contact with the conductive film 511C in the opening 591C of the insulating film 501C.

The insulating film 501A includes a region sandwiched between the intermediate film 754A and the insulating film 501C along the peripheral edge of the first opening 592A, and the insulating film 501A extends along the peripheral edge of the second opening 592B. A region sandwiched between the intermediate film 754B and the conductive film 511B is provided.

<Insulating Film 521, Insulating Film 528, Insulating Film 518, Insulating Film 516, etc.>
The insulating film 521 includes a region sandwiched between the pixel circuit 530 (i, j) and the display element 550 (i, j).

The insulating film 528 is provided between the insulating film 521 and the substrate 570 and includes an opening in a region overlapping with the display element 550 (i, j).

An insulating film 528 formed along the periphery of the third electrode 551 (i, j) prevents a short circuit between the third electrode 551 (i, j) and the fourth electrode 552.

The insulating film 518 includes a region sandwiched between the insulating film 521 and the pixel circuit 530 (i, j).

The insulating film 516 includes a region sandwiched between the insulating film 518 and the pixel circuit 530 (i, j).

<Terminal etc.>
In addition, the display panel described in this embodiment includes a terminal 519B and a terminal 519C.

The terminal 519B includes a conductive film 511B and an intermediate film 754B, and the intermediate film 754B includes a region in contact with the conductive film 511B. The terminal 519B is electrically connected to the signal line S1 (j), for example.

The terminal 519C includes a conductive film 511C and an intermediate film 754C, and the intermediate film 754C includes a region in contact with the conductive film 511C. The conductive film 511C is electrically connected to, for example, the wiring VCOM1.

The conductive material CP is sandwiched between the terminal 519C and the second electrode 752, and has a function of electrically connecting the terminal 519C and the second electrode 752. For example, conductive particles can be used for the conductive material CP.

<Board etc.>
In addition, the display panel described in this embodiment includes a substrate 570 and a substrate 770.

The substrate 770 includes a region overlapping with the substrate 570. The substrate 770 includes a region that sandwiches the functional layer 520 with the substrate 570.

<Junction layer, sealing material, structure, etc.>
In addition, the display panel described in this embodiment includes a bonding layer 505, a sealing material 705, and a structure KB1.

The bonding layer 505 includes a region sandwiched between the functional layer 520 and the substrate 570 and has a function of bonding the functional layer 520 and the substrate 570 together.

The sealing material 705 includes a region sandwiched between the functional layer 520 and the substrate 770 and has a function of bonding the functional layer 520 and the substrate 770 together.

The structure KB1 has a function of providing a predetermined gap between the functional layer 520 and the substrate 770.

<Functional membranes, etc.>
In addition, the display panel described in this embodiment includes a light-blocking film BM, an insulating film 771, a functional film 770P, and a functional film 770D. Further, it has a colored film CF1 and a colored film CF2.

The light shielding film BM includes an opening in a region overlapping with the display element 750 (i, j). The coloring film CF2 is provided between the insulating film 501C and the display element 550 (i, j) and includes a region overlapping with the opening 751H (see FIG. 25A).

The insulating film 771 includes a region sandwiched between the colored film CF1 and the layer 753 containing a liquid crystal material or between the light shielding film BM and the layer 753 containing a liquid crystal material. Thereby, the unevenness | corrugation based on the thickness of colored film CF1 can be made flat. Alternatively, impurity diffusion from the light-blocking film BM, the coloring film CF1, or the like to the layer 753 containing a liquid crystal material can be suppressed.

The functional film 770P includes a region overlapping with the display element 750 (i, j).

The functional film 770D includes a region overlapping with the display element 750 (i, j). The functional film 770D is disposed so as to sandwich the substrate 770 with the display element 750 (i, j). Thereby, for example, the light reflected by the display element 750 (i, j) can be diffused.

<Examples of components>
The display panel 700_3 includes the substrate 570, the substrate 770, the structure KB1, the sealing material 705, or the bonding layer 505.

The display panel 700_3 includes the functional layer 520, the insulating film 521, or the insulating film 528.

The display panel 700_3 includes the signal line S1 (j), the signal line S2 (j), the scanning line G1 (i), the scanning line G2 (i), the wiring CSCOM, or the third conductive film ANO.

The display panel 700_3 includes a first conductive film or a second conductive film.

The display panel 700_3 includes the terminal 519B, the terminal 519C, the conductive film 511B, or the conductive film 511C.

In addition, the display panel 700_3 includes the pixel circuit 530 (i, j) or the switch SW1.

The display panel 700_3 includes the display element 750 (i, j), the first electrode 751 (i, j), the light reflecting film, the opening, the layer 753 containing a liquid crystal material, or the second electrode 752.

The display panel 700_3 includes the alignment film AF1, the alignment film AF2, the coloring film CF1, the coloring film CF2, the light-shielding film BM, the insulating film 771, the functional film 770P, and the functional film 770D.

The display panel 700_3 includes the display element 550 (i, j), the third electrode 551 (i, j), the fourth electrode 552, or the light-emitting layer 553 (j).

The display panel 700_3 includes the insulating film 501A and the insulating film 501C.

In addition, the display panel 700_3 includes the driver circuit GD or the driver circuit SD.

<Structure KB1>
For example, an organic material, an inorganic material, or a composite material of an organic material and an inorganic material can be used for the structure KB1 or the like. Thereby, a predetermined space | interval can be provided between the structures which pinch | interpose structure KB1 grade | etc.,.

Specifically, polyester, polyolefin, polyamide, polyimide, polycarbonate, polysiloxane, acrylic resin, or a composite material of a plurality of resins selected from these can be used for the structure KB1. Alternatively, a material having photosensitivity may be used.

<Sealing material 705>
An inorganic material, an organic material, a composite material of an inorganic material and an organic material, or the like can be used for the sealant 705 or the like.

For example, an organic material such as a heat-meltable resin or a curable resin can be used for the sealing material 705 or the like.

For example, an organic material such as a reactive curable adhesive, a photocurable adhesive, a thermosetting adhesive, and / or an anaerobic adhesive can be used for the sealing material 705 or the like.

Specifically, an adhesive including epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, and the like. Can be used for the sealing material 705 or the like.

<Junction layer 505>
For example, a material that can be used for the sealant 705 can be used for the bonding layer 505.

<Insulating film 521>
For example, a material used for the insulating films 521A and 521B can be used.

<Insulating film 528>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 528 or the like. Specifically, a film containing polyimide with a thickness of 1 μm can be used for the insulating film 528.

<Insulating film 501A>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 501A. For example, a material having a function of supplying hydrogen can be used for the insulating film 501A.

Specifically, a material in which a material containing silicon and oxygen and a material containing silicon and nitrogen are stacked can be used for the insulating film 501A. For example, a material having a function of releasing hydrogen by heating or the like and supplying the released hydrogen to another structure can be used for the insulating film 501A. Specifically, a material having a function of releasing hydrogen taken in during the manufacturing process by heating or the like and supplying the hydrogen to another structure can be used for the insulating film 501A.

For example, a film containing silicon and oxygen formed by a chemical vapor deposition method using silane or the like as a source gas can be used for the insulating film 501A.

Specifically, a material in which a material including silicon and oxygen having a thickness of 200 nm to 600 nm and a material including silicon and nitrogen and having a thickness of about 200 nm can be used for the insulating film 501A.

<Insulating film 501C>
For example, a material that can be used for the insulating film 521 can be used for the insulating film 501C. Specifically, a material containing silicon and oxygen can be used for the insulating film 501C. Thereby, diffusion of impurities into the pixel circuit or the display element 550 (i, j) can be suppressed.

For example, a 200-nm-thick film containing silicon, oxygen, and nitrogen can be used for the insulating film 501C.

<Intermediate film 754A, intermediate film 754B, intermediate film 754C>
For example, a film having a thickness of 10 nm to 500 nm, preferably 10 nm to 100 nm can be used for the intermediate film 754A, the intermediate film 754B, or the intermediate film 754C. Note that in this specification, the intermediate film 754A, the intermediate film 754B, or the intermediate film 754C is referred to as an intermediate film.

For example, a material having a function of permeating or supplying hydrogen can be used for the intermediate film.

For example, a material having conductivity can be used for the intermediate film.

For example, a material having optical transparency can be used for the intermediate film.

Specifically, a material containing indium and oxygen, a material containing indium, gallium, zinc and oxygen, a material containing indium, tin and oxygen, or the like can be used for the intermediate film. Note that these materials have a function of permeating hydrogen.

Specifically, a 50 nm-thick film or a 100 nm-thick film containing indium, gallium, zinc, and oxygen can be used as the intermediate film.

Note that a material in which a film functioning as an etching stopper is stacked can be used for the intermediate film. Specifically, a laminated material obtained by laminating a film having a thickness of 50 nm containing indium, gallium, zinc, and oxygen and a film having a thickness of 20 nm containing indium, tin, and oxygen in this order is used for the intermediate film. it can.

<Wiring, terminal, conductive film>
A conductive material can be used for the wiring or the like. Specifically, a material having conductivity is formed using a signal line S1 (j), a signal line S2 (j), a scanning line G1 (i), a scanning line G2 (i), a wiring CSCOM, a third conductive film ANO, It can be used for the terminal 519B, the terminal 519C, the conductive film 511B, the conductive film 511C, or the like.

For example, an inorganic conductive material, an organic conductive material, a metal, a conductive ceramic, or the like can be used for the wiring.

Specifically, a metal element selected from aluminum, gold, platinum, silver, copper, chromium, tantalum, titanium, molybdenum, tungsten, nickel, iron, cobalt, palladium, or manganese can be used for the wiring or the like. . Alternatively, an alloy containing the above metal element can be used for the wiring or the like. In particular, an alloy of copper and manganese is suitable for fine processing using a wet etching method.

Specifically, a two-layer structure in which a titanium film is laminated on an aluminum film, a two-layer structure in which a titanium film is laminated on a titanium nitride film, a two-layer structure in which a tungsten film is laminated on a titanium nitride film, a tantalum nitride film or A two-layer structure in which a tungsten film is stacked on a tungsten nitride film, a titanium film, and a three-layer structure in which an aluminum film is stacked on the titanium film and a titanium film is further formed thereon can be used for wiring or the like. .

Specifically, a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added can be used for the wiring or the like.

Specifically, a film containing graphene or graphite can be used for the wiring or the like.

For example, by forming a film containing graphene oxide and reducing the film containing graphene oxide, the film containing graphene can be formed. Examples of the reduction method include a method of applying heat and a method of using a reducing agent.

For example, a film containing metal nanowires can be used for wiring or the like. Specifically, a nanowire containing silver can be used.

Specifically, a conductive polymer can be used for wiring or the like.

Note that, for example, the conductive material ACF1 can be used to electrically connect the terminal 519B and the flexible printed circuit board FPC1.

<First conductive film, second conductive film>
For example, a material that can be used for a wiring or the like can be used for the first conductive film or the second conductive film.

In addition, the first electrode 751 (i, j), the wiring, or the like can be used for the first conductive film.

In addition, a conductive film 512B functioning as a source electrode or a drain electrode of a transistor that can be used for the switch SW1, a wiring, or the like can be used for the second conductive film.

<Display element 750 (i, j)>
For example, a display element having a function of controlling reflection or transmission of light can be used for the display element 750 (i, j). For example, a structure in which a liquid crystal element and a polarizing plate are combined or a shutter-type MEMS display element or the like can be used. Specifically, a reflective liquid crystal display element can be used for the display element 750 (i, j). By using a reflective display element, power consumption of the display panel can be suppressed.

For example, IPS (In-Plane-Switching) mode, TN (Twisted Nematic) mode, FFS (Fringe Field Switched) mode, ASM (Axially Symmetrically Applied Micro-cell) mode, OCB (OpticBridge) mode. A liquid crystal element that can be driven using a driving method such as a Crystal) mode or an AFLC (Antiferroelectric Liquid Crystal) mode can be used.

In addition, for example, vertical alignment (VA) mode, specifically, MVA (Multi-Domain Vertical Alignment) mode, PVA (Patterned Vertical Alignment) mode, ECB (Electrically Controlled Birefringence ACP mode, CPB mode) A liquid crystal element that can be driven by a driving method such as an (Advanced Super-View) mode can be used.

The display element 750 (i, j) includes a first electrode 751 (i, j), a second electrode 752, and a layer 753 containing a liquid crystal material. The layer 753 containing a liquid crystal material contains a liquid crystal material whose alignment can be controlled using a voltage between the first electrode 751 (i, j) and the second electrode 752. For example, an electric field in the thickness direction (also referred to as a vertical direction) of the layer 753 containing a liquid crystal material and a direction intersecting with the vertical direction (also referred to as a horizontal direction or an oblique direction) is used as an electric field for controlling the alignment of the liquid crystal material. it can.

<Layer 753 including liquid crystal material>
For example, a thermotropic liquid crystal, a low molecular liquid crystal, a polymer liquid crystal, a polymer dispersed liquid crystal, a ferroelectric liquid crystal, an antiferroelectric liquid crystal, or the like can be used for the layer containing a liquid crystal material. Alternatively, a liquid crystal material exhibiting a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, or the like can be used. Alternatively, a liquid crystal material exhibiting a blue phase can be used.

<First electrode 751 (i, j)>
For example, a material used for a wiring or the like can be used for the first electrode 751 (i, j). Specifically, a light reflecting film can be used for the first electrode 751 (i, j). For example, a material in which a conductive film having light transmittance and a light reflecting film having an opening are stacked can be used for the first electrode 751 (i, j).

<Light reflecting film>
For example, a material that reflects visible light can be used for the light reflecting film. Specifically, a material containing silver can be used for the light reflecting film. For example, a material containing silver and palladium or a material containing silver and copper can be used for the light reflecting film.

The light reflecting film reflects, for example, light transmitted through the layer 753 containing a liquid crystal material. Accordingly, the display element 750 (i, j) can be a reflective liquid crystal element. Further, for example, a material having irregularities on the surface can be used for the light reflecting film. Thereby, incident light can be reflected in various directions to display white.

For example, the first conductive film, the first electrode 751 (i, j), or the like can be used for the light reflecting film.

For example, a film including a region between the layer 753 containing a liquid crystal material and the first electrode 751 (i, j) can be used as the light reflecting film. Alternatively, a light reflective film can be used for a film including a region in which the first electrode 751 (i, j) having light transmittance is interposed between the layer 753 containing a liquid crystal material.

For example, the light reflecting film has a shape in which a region that does not block the light emitted from the display element 550 (i, j) is formed.

For example, a shape having one or a plurality of openings can be used for the light reflecting film.

A shape such as a polygon, a rectangle, an ellipse, a circle, or a cross can be used for the opening. In addition, an elongated stripe shape, a slit shape, or a checkered shape can be used for the opening 751H.

If the value of the ratio of the total area of the opening 751H to the total area of the non-opening is too large, the display using the display element 750 (i, j) becomes dark.

In addition, if the ratio of the total area of the opening 751H to the total area of the non-opening is too small, the display using the display element 550 (i, j) becomes dark. Alternatively, the reliability of the display element 550 (i, j) may be impaired.

For example, the opening 751H of the pixel 702 (i, j + 1) adjacent to the pixel 702 (i, j) passes through the opening 751H of the pixel 702 (i, j) (the direction indicated by the arrow R1 in the drawing). (See FIG. 29A). Alternatively, for example, the opening 751H of the pixel 702 (i + 1, j) adjacent to the pixel 702 (i, j) passes through the opening 751H of the pixel 702 (i, j) in the column direction (in FIG. They are not arranged on a straight line extending in the direction shown (see FIG. 29B).

For example, the opening 751H of the pixel 702 (i, j + 2) is disposed on a straight line extending in the row direction and passing through the opening 751H of the pixel 702 (i, j) (see FIG. 29A). In addition, the opening 751H of the pixel 702 (i, j + 1) is arranged on a straight line orthogonal to the straight line between the opening 751H of the pixel 702 (i, j) and the opening 751H of the pixel 702 (i, j + 2). Established.

Alternatively, for example, the opening 751H of the pixel 702 (i + 2, j) is arranged on a straight line passing through the opening 751H of the pixel 702 (i, j) and extending in the column direction (see FIG. 29B). . For example, the opening 751H of the pixel 702 (i + 1, j) is on a straight line orthogonal to the straight line between the opening 751H of the pixel 702 (i, j) and the opening 751H of the pixel 702 (i + 2, j). It is arranged.

Note that, for example, a material having a shape in which an end portion is cut off so that a region 751E that does not block light emitted from the display element 550 (i, j) is formed can be used for the light reflecting film. (See FIG. 29C). Specifically, the first electrode 751 (i, j) whose end is cut so that the column direction (the direction indicated by the arrow C1 in the drawing) is shortened can be used for the light reflecting film.

<Second electrode 752>
For example, a material having conductivity can be used for the second electrode 752. A material having a light-transmitting property with respect to visible light can be used for the second electrode 752.

For example, a conductive oxide, a metal film that is thin enough to transmit light, or a metal nanowire can be used for the second electrode 752.

Specifically, a conductive oxide containing indium can be used for the second electrode 752. Alternatively, a metal thin film with a thickness greater than or equal to 1 nm and less than or equal to 10 nm can be used for the second electrode 752. In addition, a metal nanowire containing silver can be used for the second electrode 752.

Specifically, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, zinc oxide to which aluminum is added, or the like can be used for the second electrode 752.

<Alignment film AF1 and alignment film AF2>
For example, a material containing polyimide or the like can be used for the alignment film AF1 or the alignment film AF2. Specifically, a material formed using a rubbing process or a photo-alignment technique so that the liquid crystal material is aligned in a predetermined direction can be used.

For example, a film containing soluble polyimide can be used for the alignment film AF1 or the alignment film AF2. Thereby, the temperature required for forming the alignment film AF1 or the alignment film AF2 can be lowered. As a result, damage to other components when forming the alignment film AF1 or the alignment film AF2 can be reduced.

<Colored film CF1, colored film CF2>
A material that transmits light of a predetermined color can be used for the colored film CF1 or the colored film CF2. Thereby, the colored film CF1 or the colored film CF2 can be used for a color filter, for example. For example, a material that transmits blue, green, or red light can be used for the colored film CF1 or the colored film CF2. Further, a material that transmits yellow light, white light, or the like can be used for the colored film CF1 or the colored film CF2.

Note that a material having a function of converting irradiated light into light of a predetermined color can be used for the colored film CF2. Specifically, quantum dots can be used for the colored film CF2. Thereby, display with high color purity can be performed.

<Light shielding film BM>
A material that prevents light transmission can be used for the light-shielding film BM. Thereby, the light shielding film BM can be used for, for example, a black matrix.

<Insulating film 771>
For example, polyimide, epoxy resin, acrylic resin, or the like can be used for the insulating film 771.

<Functional film 770P, Functional film 770D>
For example, an antireflection film, a polarizing film, a retardation film, a light diffusion film, a light collecting film, or the like can be used for the functional film 770P or the functional film 770D.

Specifically, a film containing a dichroic dye can be used for the functional film 770P or the functional film 770D. Alternatively, a material having a columnar structure including an axis along a direction intersecting the surface of the base material can be used for the functional film 770P or the functional film 770D. Thereby, light can be easily transmitted in a direction along the axis and can be easily scattered in other directions.

In addition, an antistatic film that suppresses adhesion of dust, a water-repellent film that makes it difficult to adhere dirt, a hard coat film that suppresses generation of scratches due to use, and the like can be used for the functional film 770P.

Specifically, a circularly polarizing film can be used for the functional film 770P. In addition, a light diffusion film can be used for the functional film 770D.

<Display element 550 (i, j)>
For example, a light-emitting element can be used for the display element 550 (i, j). Specifically, an organic electroluminescent element, an inorganic electroluminescent element, a light-emitting diode, or the like can be used for the display element 550 (i, j).

For example, a light-emitting organic compound can be used for the light-emitting layer 553 (j).

For example, quantum dots can be used for the light-emitting layer 553 (j). Thereby, the half value width is narrow and it is possible to emit brightly colored light.

For example, a light-emitting layer 553 (a laminated material laminated so as to emit blue light, a laminated material laminated so as to emit green light, or a laminated material laminated so as to emit red light) j).

For example, a strip-shaped stacked material that is long in the column direction along the signal line S2 (j) can be used for the light-emitting layer 553 (j).

For example, a stacked material stacked so as to emit white light can be used for the light-emitting layer 553 (j). Specifically, a light emitting layer containing a fluorescent material that emits blue light, a layer containing a material other than a fluorescent material that emits green and red light, or a layer containing a material other than a fluorescent material that emits yellow light Can be used for the light-emitting layer 553 (j).

For example, a material that can be used for a wiring or the like can be used for the third electrode 551 (i, j).

For example, a material that has a light-transmitting property with respect to visible light and is selected from materials that can be used for wirings or the like can be used for the third electrode 551 (i, j).

Specifically, a conductive oxide or a conductive oxide containing indium, indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like is used for the third electrode 551 (i , J). Alternatively, a metal film that is thin enough to transmit light can be used for the third electrode 551 (i, j). Alternatively, a metal film that transmits part of light and reflects the other part of light can be used for the third electrode 551 (i, j). Thereby, a microresonator structure can be provided in the display element 550 (i, j). As a result, light with a predetermined wavelength can be extracted more efficiently than other light.

For example, a material that can be used for a wiring or the like can be used for the fourth electrode 552. Specifically, a light-reflective material, in other words, a material that reflects visible light can be used for the fourth electrode 552.

<Drive circuit GD>
For example, a different structure from the transistor that can be used for the switch SW1 can be used for the transistor MD. Specifically, a transistor including the conductive film 524 can be used for the transistor MD (see FIG. 25B).

Note that the same structure as the transistor M can be used for the transistor MD.

The structure of the display panel 700_3 (see FIGS. 25A and 26A) includes the display element 750 (i, j) as compared to the structure of the display panel 700 (see FIGS. 4A and 5). Therefore, the number of masks required for the process increases. By having the structure as shown in Embodiment Modes 1 to 3 in the display panel, the number of steps is not increased even if the minute optical resonator is formed, which is effective in reducing the manufacturing cost.

(Embodiment 9)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS.

FIG. 30A is a block diagram illustrating a structure of an information processing device of one embodiment of the present invention. FIG. 30B and FIG. 30C are projection views for explaining an example of the appearance of the information processing apparatus 200.

FIG. 31 is a flowchart illustrating a program according to one embodiment of the present invention. FIG. 31A is a flowchart for describing main processing of the program of one embodiment of the present invention, and FIG. 31B is a flowchart for describing interrupt processing.

FIG. 32 is a diagram illustrating a program according to one embodiment of the present invention. FIG. 32A is a flowchart for describing interrupt processing of a program according to one embodiment of the present invention, and FIG. 32B is a timing chart illustrating operation of the information processing device according to one embodiment of the present invention.

<Configuration example 1 of information processing apparatus>
The information processing device 200 described in this embodiment includes an input / output device 220 and an arithmetic device 210 (see FIG. 30A). The input / output device is electrically connected to the arithmetic device 210. Further, the information processing device 200 can include a housing (see FIG. 30B or FIG. 30C).

The input / output device 220 includes a display portion 230 and an input portion 240 (see FIG. 30A). The input / output device 220 includes a detection unit 250. In addition, the input / output device 220 can include a communication unit 290.

The input / output device 220 has a function of supplying image information V1 or control information SS, and a function of supplying position information P1 or detection information SE1.

The arithmetic device 210 has a function to which the position information P1 or the detection information SE1 is supplied. The arithmetic device 210 has a function of supplying image information V1. The arithmetic device 210 has a function of operating based on, for example, the position information P1 or the detection information SE1.

Note that the housing has a function of housing the input / output device 220 or the arithmetic device 210. Alternatively, the housing has a function of supporting the display unit 230 or the arithmetic device 210.

The display unit 230 has a function of displaying an image based on the image information V1. The display unit 230 has a function of displaying an image based on the control information SS.

The input unit 240 has a function of supplying the position information P1.

The detection unit 250 has a function of supplying detection information SE1. For example, the detection unit 250 has a function of detecting the illuminance of an environment where the information processing apparatus 200 is used, and a function of supplying illuminance information.

Thereby, the information processing apparatus can operate by grasping the intensity of light received by the casing of the information processing apparatus in an environment where the information processing apparatus is used. Alternatively, the user of the information processing apparatus can select a display method. As a result, a novel information processing apparatus that is highly convenient or reliable can be provided.

Below, each element which comprises information processing apparatus is demonstrated. Note that these configurations cannot be clearly separated, and one configuration may serve as another configuration or may include a part of another configuration. For example, a touch panel in which a touch sensor is superimposed on a display panel is not only a display unit but also an input unit.

<Configuration example>
The information processing device 200 of one embodiment of the present invention includes a housing or the arithmetic device 210.

The computing device 210 includes a computing unit 211, a storage unit 212, a transmission path 214, and an input / output interface 215.

Further, the information processing device of one embodiment of the present invention includes the input / output device 220.

The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, and a communication unit 290.

<Information processing device>
The information processing device of one embodiment of the present invention includes the arithmetic device 210 or the input / output device 220.

<Calculation device 210>
The calculation device 210 includes a calculation unit 211 and a storage unit 212. A transmission path 214 and an input / output interface 215 are provided.

<Calculation unit 211>
The calculation unit 211 has a function of executing a program, for example.

<Storage unit 212>
The storage unit 212 has a function of storing, for example, a program executed by the calculation unit 211, initial information, setting information, or an image.

Specifically, a hard disk, a flash memory, a memory including a transistor including an oxide semiconductor, or the like can be used.

<I / O interface 215, transmission path 214>
The input / output interface 215 includes a terminal or a wiring, and has a function of supplying information and receiving information. For example, the transmission line 214 can be electrically connected. Further, the input / output device 220 can be electrically connected.

The transmission path 214 includes wiring, supplies information, and has a function of being supplied with information. For example, the input / output interface 215 can be electrically connected. In addition, the calculation unit 211 or the storage unit 212 can be electrically connected.

<Input / output device 220>
The input / output device 220 includes a display unit 230, an input unit 240, a detection unit 250, or a communication unit 290. For example, the input / output device described in Embodiment 6 can be used. Thereby, power consumption can be reduced.

<Display unit 230>
The display unit 230 includes a control unit 238, a drive circuit GD, a drive circuit SD, and a display panel 700 (see FIG. 17). For example, the display device described in Embodiment 5 can be used for the display portion 230.

<Input unit 240>
Various human interfaces or the like can be used for the input unit 240 (see FIG. 30).

For example, a keyboard, mouse, touch sensor, microphone, camera, or the like can be used for the input unit 240. Note that a touch sensor including a region overlapping with the display portion 230 can be used. An input / output device including a touch sensor including a display unit 230 and a region overlapping with the display unit 230 can be referred to as a touch panel or a touch screen.

For example, the user can make various gestures (tap, drag, swipe, pinch in, etc.) using a finger touching the touch panel as a pointer.

For example, the computing device 210 may analyze information such as the position or trajectory of a finger that touches the touch panel, and a specific gesture may be supplied when the analysis result satisfies a predetermined condition. Accordingly, the user can supply a predetermined operation command associated with the predetermined gesture in advance using the gesture.

For example, the user can supply a “scroll command” for changing the display position of the image information using a gesture for moving a finger that touches the touch panel along the touch panel.

<Detection unit 250>
The detection unit 250 has a function of detecting surrounding conditions and supplying detection information. Specifically, illuminance information, posture information, pressure information, position information, and the like can be supplied.

For example, a light detector, an attitude detector, an acceleration sensor, an orientation sensor, a GPS (Global positioning System) signal receiving circuit, a pressure sensor, a temperature sensor, a humidity sensor, a camera, or the like can be used for the detection unit 250.

<Communication unit 290>
The communication unit 290 has a function of supplying information to the network and acquiring information from the network.

<Program>
The program of one embodiment of the present invention includes the following steps (see FIG. 31A).

[First step]
In the first step, the settings are initialized (see FIGS. 31A and S1).

For example, predetermined image information to be displayed at startup, a predetermined mode for displaying the image information, and information for specifying a predetermined display method for displaying the image information are acquired from the storage unit 212. Specifically, one still image information or other moving image information can be used as predetermined image information. Further, the first mode or the second mode can be used as a predetermined mode.

[Second step]
In the second step, interrupt processing is permitted (see FIGS. 31A and S2). Note that an arithmetic unit that is permitted to perform interrupt processing can perform interrupt processing in parallel with main processing. The arithmetic unit that has returned to the main process from the interrupt process can reflect the result obtained by the interrupt process to the main process.

Note that when the counter value is an initial value, the arithmetic unit performs interrupt processing, and when returning from the interrupt processing, the counter may be set to a value other than the initial value. As a result, interrupt processing can always be performed after the program is started.

[Third step]
In the third step, the image information is displayed using the predetermined mode or the predetermined display method selected in the first step or the interruption process (see FIGS. 31A and 31). The predetermined mode specifies a mode for displaying image information, and the predetermined display method specifies a method for displaying image information. Further, for example, it can be used as information for displaying the image information V1 or the information V12.

For example, one method for displaying the image information V1 can be associated with the first mode. Alternatively, another method for displaying the image information V1 can be associated with the second mode. Thereby, a display method can be selected based on the selected mode.

<First mode>
Specifically, a method of supplying a selection signal to one scanning line at a frequency of 30 Hz or more, preferably 60 Hz or more, and displaying based on the selection signal can be associated with the first mode.

For example, when the selection signal is supplied at a frequency of 30 Hz or higher, preferably 60 Hz or higher, the motion of the moving image can be displayed smoothly.

For example, when an image is updated at a frequency of 30 Hz or higher, preferably 60 Hz or higher, an image that changes so as to smoothly follow the user's operation can be displayed on the information processing apparatus 200 being operated by the user.

<Second mode>
Specifically, a method of supplying a selection signal to one scanning line at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute, and performing display based on the selection signal is described in the second mode. Can be associated with

When the selection signal is supplied at a frequency of less than 30 Hz, preferably less than 1 Hz, more preferably less than once per minute, a display in which flicker or flicker is suppressed can be displayed. In addition, power consumption can be reduced.

For example, when the information processing apparatus 200 is used for a clock, the display can be updated at a frequency of once per second or a frequency of once per minute.

By the way, for example, when a light-emitting element is used as a display element, the light-emitting element can emit light in a pulse shape to display image information. Specifically, the organic EL element can emit light in a pulse shape, and the afterglow can be used for display. Since the organic EL element has excellent frequency characteristics, there are cases where the time for driving the light emitting element can be shortened and the power consumption can be reduced. Alternatively, heat generation is suppressed, so that deterioration of the light-emitting element can be reduced in some cases.

[Fourth step]
In the fourth step, if the end instruction is supplied, the process proceeds to the fifth step, and if the end instruction is not supplied, the process proceeds to the third step (see FIGS. 31A and S4). ).

For example, an end command supplied in the interrupt process may be used for determination.

[Fifth step]
In the fifth step, the process ends (see FIGS. 31A and S5).

<Interrupt processing>
The interrupt process includes the following sixth to eighth steps (see FIG. 31B).

[Sixth Step]
In the sixth step, for example, the detection unit 250 is used to detect the illuminance of the environment in which the information processing apparatus 200 is used (see FIGS. 31B and S6). Note that the color temperature or chromaticity of the ambient light may be detected instead of the illuminance of the environment.

[Seventh Step]
In the seventh step, a display method is determined based on the detected illuminance information (see FIGS. 31B and S7). For example, the display brightness is determined not to be too dark or too bright.

When the color temperature of ambient light or the chromaticity of ambient light is detected in the sixth step, the display color may be adjusted.

[Eighth step]
In the eighth step, the interrupt process is terminated (see FIGS. 31B and S8).

<Configuration Example 2 of Information Processing Device>
Another structure of the information processing device of one embodiment of the present invention is described with reference to FIG.

FIG. 32A is a flowchart illustrating a program of one embodiment of the present invention. FIG. 32A is a flowchart for explaining interrupt processing different from the interrupt processing shown in FIG.

The configuration example 3 of the information processing device is different from the interrupt processing described with reference to FIG. 31B in that the interrupt processing includes a step of changing the mode based on the supplied predetermined event. . Here, different portions will be described in detail, and the above description will be applied to portions that can use the same configuration.

<Interrupt processing>
The interrupt process includes the following sixth to eighth steps (see FIG. 32A).

[Sixth Step]
In the sixth step, if a predetermined event is supplied, the process proceeds to the seventh step. If a predetermined event is not supplied, the process proceeds to the eighth step (see FIGS. 32A and U6). ). For example, it can be used as a condition whether or not a predetermined event is supplied during a predetermined period. Specifically, the predetermined period can be a period of 5 seconds or less, 1 second or less, or 0.5 seconds or less, preferably 0.1 seconds or less and longer than 0 seconds.

[Seventh Step]
In the seventh step, the mode is changed (see FIGS. 32A and U7). Specifically, when the first mode is selected, the second mode is selected, and when the second mode is selected, the first mode is selected.

For example, the display mode can be changed for some areas of the display unit 230. Specifically, the display mode can be changed for a region where the drive circuit GDB of the display unit 230 including the drive circuit GDA, the drive circuit GDB, the drive circuit GDC, and the drive circuit GDD supplies a selection signal (FIG. 32 ( B)).

For example, when a predetermined event is supplied to the input unit 240 of an area where the drive circuit GDB supplies a selection signal, the display mode of the area can be changed. Specifically, the frequency of the selection signal supplied by the drive circuit GDB can be changed. Thereby, for example, the display of the region where the drive circuit GDB supplies the selection signal can be updated without operating the drive circuit GDA, the drive circuit GDC, and the drive circuit GDD. Alternatively, power consumed by the driver circuit can be suppressed.

[Eighth step]
In the eighth step, the interrupt process is terminated (see FIGS. 32A and U8). Note that interrupt processing may be repeatedly executed during a period in which main processing is being executed.

<Predetermined event>
For example, an event such as “click” or “drag” supplied using a pointing device such as a mouse, an event such as “tap”, “drag” or “swipe” supplied to a touch panel using a finger or the like as a pointer Can be used.

Further, for example, an argument of a command associated with a predetermined event can be given using the position of the slide bar pointed to by the pointer, the swipe speed, the drag speed, or the like.

For example, the information detected by the detection unit 250 can be compared with a preset threshold value, and the comparison result can be used as an event.

Specifically, a pressure-sensitive detector or the like that contacts a button or the like that can be pushed into the housing can be used for the detection unit 250.

<Instruction associated with a predetermined event>
For example, an end instruction can be associated with a particular event.

For example, a “page turning command” for switching display from one displayed image information to another image information can be associated with a predetermined event. Note that an argument that determines a page turning speed used when executing the “page turning instruction” can be given using a predetermined event.

For example, a “scroll command” for moving the display position of a part of one image information displayed to display another part continuous to the part can be associated with a predetermined event. It should be noted that an argument that determines the speed of moving the display position used when executing the “scroll command” can be given using a predetermined event.

For example, a command for setting a display method or a command for generating image information can be associated with a predetermined event. An argument that determines the brightness of the image to be generated can be associated with a predetermined event. Further, an argument for determining the brightness of the image to be generated may be determined based on the brightness of the environment detected by the detection unit 250.

For example, a command for acquiring information distributed using a push-type service using the communication unit 290 can be associated with a predetermined event.

In addition, you may determine the presence or absence of the qualification to acquire information using the positional information which the detection part 250 detects. Specifically, when a user is inside or in a specific classroom, school, conference room, company, building, etc., it may be determined that he / she is qualified to acquire information. Accordingly, for example, the teaching material distributed in a classroom such as a school or a university can be received and the information processing apparatus 200 can be used as a textbook (see FIG. 30C). Alternatively, a material distributed in a conference room of a company or the like can be received and used as a conference material.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 10)
In this embodiment, a structure of an information processing device of one embodiment of the present invention will be described with reference to FIGS.

33 and 34 illustrate a structure of the information processing device of one embodiment of the present invention. FIG. 33A is a block diagram of an information processing device, and FIGS. 33B to 33E are perspective views illustrating the configuration of the information processing device. FIGS. 34A to 34E are perspective views illustrating the configuration of the information processing apparatus.

<Information processing device>
An information processing device 5200B described in this embodiment includes an arithmetic device 5210 and an input / output device 5220 (see FIG. 33A).

The arithmetic device 5210 has a function of supplying operation information and a function of supplying image information based on the operation information.

The input / output device 5220 includes a display unit 5230, an input unit 5240, a detection unit 5250, a communication unit 5290, a function of supplying operation information, and a function of supplying image information. The input / output device 5220 has a function of supplying detection information, a function of supplying communication information, and a function of supplying communication information.

The input unit 5240 has a function of supplying operation information. For example, the input unit 5240 supplies operation information based on the operation of the user of the information processing apparatus 5200B.

Specifically, a keyboard, hardware buttons, a pointing device, a touch sensor, a voice input device, a line-of-sight input device, or the like can be used for the input unit 5240.

The display unit 5230 has a function of displaying a display panel and image information. For example, the display panel described in Embodiment 1 can be used for the display portion 5230.

The detection unit 5250 has a function of supplying detection information. For example, it has a function of detecting the surrounding environment where the information processing apparatus is used and supplying it as detection information.

Specifically, an illuminance sensor, an imaging device, a posture detection device, a pressure sensor, a human sensor, or the like can be used for the detection unit 5250.

The communication unit 5290 has a function for supplying communication information and a function for supplying communication information. For example, a function of connecting to another electronic device or a communication network by wireless communication or wired communication is provided. Specifically, it has functions such as wireless local area communication, telephone communication, and short-range wireless communication.

<Configuration example 1 of information processing apparatus>
For example, an outer shape along a cylindrical column or the like can be applied to the display portion 5230 (see FIG. 33B). In addition, it has a function of changing the display method according to the illuminance of the usage environment. It also has a function of detecting the presence of a person and changing the display content. Thereby, it can install in the pillar of a building, for example. Alternatively, an advertisement or a guide can be displayed. Alternatively, it can be used for digital signage and the like.

<Configuration Example 2 of Information Processing Device>
For example, a function of generating image information based on a locus of a pointer used by the user is provided (see FIG. 33C). Specifically, a display panel having a diagonal line length of 20 inches or more, preferably 40 inches or more, more preferably 55 inches or more can be used. Alternatively, a plurality of display panels can be arranged and used for one display area. Alternatively, a plurality of display panels can be arranged and used for a multi-screen. Thereby, it can use for an electronic blackboard, an electronic bulletin board, an electronic signboard, etc., for example.

<Configuration Example 3 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 33D). Thereby, for example, the power consumption of the smart watch can be reduced. Alternatively, for example, an image can be displayed on the smart watch so that the image can be suitably used even in an environment with strong outside light such as outdoors on a sunny day.

<Configuration Example 4 of Information Processing Device>
The display portion 5230 includes, for example, a curved surface that bends gently along the side surface of the housing (see FIG. 33E). Alternatively, the display unit 5230 includes a display panel, and the display panel has a function of displaying on the front surface, the side surface, and the upper surface, for example. Thereby, for example, image information can be displayed not only on the front surface of the mobile phone but also on the side surface and the upper surface.

<Configuration Example 5 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 34A). Thereby, the power consumption of a smart phone can be reduced. Alternatively, for example, an image can be displayed on a smartphone so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

<Configuration Example 6 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 34B). Thereby, an image can be displayed on the television system so that it can be suitably used even when it is exposed to strong external light that is inserted indoors on a sunny day.

<Configuration Example 7 of Information Processing Device>
For example, a function of changing a display method in accordance with the illuminance of the usage environment is provided (see FIG. 34C). Thereby, for example, an image can be displayed on a tablet computer so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

<Configuration Example 8 of Information Processing Device>
For example, a function of changing a display method according to the illuminance of the usage environment is provided (see FIG. 34D). Thereby, for example, the subject can be displayed on the digital camera so that it can be viewed properly even in an environment with strong external light such as outdoors on a sunny day.

<Configuration Example 9 of Information Processing Device>
For example, a function of changing a display method in accordance with the illuminance of the usage environment is provided (see FIG. 34E). Thereby, for example, an image can be displayed on a personal computer so that it can be suitably used even in an environment with strong external light such as outdoors on a sunny day.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

For example, in this specification and the like, when X and Y are explicitly described as being connected, X and Y are electrically connected, and X and Y are functional. And the case where X and Y are directly connected are disclosed in this specification and the like. Therefore, it is not limited to a predetermined connection relationship, for example, the connection relationship shown in the figure or text, and anything other than the connection relation shown in the figure or text is also described in the figure or text.

Here, X and Y are assumed to be objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

As an example of the case where X and Y are directly connected, an element that enables electrical connection between X and Y (for example, a switch, a transistor, a capacitor, an inductor, a resistor, a diode, a display, etc.) Element, light emitting element, load, etc.) are not connected between X and Y, and elements (for example, switches, transistors, capacitive elements, inductors) that enable electrical connection between X and Y X and Y are not connected via a resistor element, a diode, a display element, a light emitting element, a load, or the like.

As an example of the case where X and Y are electrically connected, an element (for example, a switch, a transistor, a capacitive element, an inductor, a resistance element, a diode, a display, etc.) that enables electrical connection between X and Y is shown. More than one element, light emitting element, load, etc.) can be connected between X and Y. Note that the switch has a function of controlling on / off. That is, the switch is in a conductive state (on state) or a non-conductive state (off state), and has a function of controlling whether or not to pass a current. Alternatively, the switch has a function of selecting and switching a path through which a current flows. Note that the case where X and Y are electrically connected includes the case where X and Y are directly connected.

As an example of the case where X and Y are functionally connected, a circuit (for example, a logic circuit (an inverter, a NAND circuit, a NOR circuit, etc.) that enables a functional connection between X and Y, signal conversion, etc. Circuit (CA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), level shifter circuit that changes signal potential level, etc.), voltage source, current source, switching Circuit, amplifier circuit (circuit that can increase signal amplitude or current amount, operational amplifier, differential amplifier circuit, source follower circuit, buffer circuit, etc.), signal generation circuit, memory circuit, control circuit, etc.) One or more can be connected between them. As an example, even if another circuit is interposed between X and Y, if the signal output from X is transmitted to Y, X and Y are functionally connected. To do. Note that the case where X and Y are functionally connected includes the case where X and Y are directly connected and the case where X and Y are electrically connected.

In addition, when it is explicitly described that X and Y are electrically connected, a case where X and Y are electrically connected (that is, there is a separate connection between X and Y). And X and Y are functionally connected (that is, they are functionally connected with another circuit between X and Y). And the case where X and Y are directly connected (that is, the case where another element or another circuit is not connected between X and Y). It shall be disclosed in the document. In other words, when it is explicitly described that it is electrically connected, the same contents as when it is explicitly described only that it is connected are disclosed in this specification and the like. It is assumed that

Note that for example, the source (or the first terminal) of the transistor is electrically connected to X through (or not through) Z1, and the drain (or the second terminal or the like) of the transistor is connected to Z2. Through (or without), Y is electrically connected, or the source (or the first terminal, etc.) of the transistor is directly connected to a part of Z1, and another part of Z1 Is directly connected to X, and the drain (or second terminal, etc.) of the transistor is directly connected to a part of Z2, and another part of Z2 is directly connected to Y. Then, it can be expressed as follows.

For example, “X and Y, and the source (or the first terminal or the like) and the drain (or the second terminal or the like) of the transistor are electrically connected to each other. The drain of the transistor (or the second terminal, etc.) and the Y are electrically connected in this order. ” Or “the source (or the first terminal or the like) of the transistor is electrically connected to X, the drain (or the second terminal or the like) of the transistor is electrically connected to Y, and X or the source ( Or the first terminal or the like, the drain of the transistor (or the second terminal, or the like) and Y are electrically connected in this order. Or “X is electrically connected to Y through the source (or the first terminal) and the drain (or the second terminal) of the transistor, and X is the source of the transistor (or the first terminal). Terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y are provided in this connection order. By using the same expression method as in these examples and defining the order of connection in the circuit configuration, the source (or the first terminal, etc.) and the drain (or the second terminal, etc.) of the transistor are separated. Apart from that, the technical scope can be determined.

Alternatively, as another expression method, for example, “a source (or a first terminal or the like of a transistor) is electrically connected to X through at least a first connection path, and the first connection path is The second connection path does not have a second connection path, and the second connection path includes a transistor source (or first terminal or the like) and a transistor drain (or second terminal or the like) through the transistor. The first connection path is a path through Z1, and the drain (or the second terminal, etc.) of the transistor is electrically connected to Y through at least the third connection path. The third connection path is connected and does not have the second connection path, and the third connection path is a path through Z2. " Or, “the source (or the first terminal or the like) of the transistor is electrically connected to X via Z1 by at least a first connection path, and the first connection path is a second connection path. The second connection path has a connection path through the transistor, and the drain (or the second terminal, etc.) of the transistor is at least connected to Z2 by the third connection path. , Y, and the third connection path does not have the second connection path. Or “the source of the transistor (or the first terminal or the like) is electrically connected to X through Z1 by at least a first electrical path, and the first electrical path is a second electrical path Does not have an electrical path, and the second electrical path is an electrical path from the source (or first terminal or the like) of the transistor to the drain (or second terminal or the like) of the transistor; The drain (or the second terminal or the like) of the transistor is electrically connected to Y through Z2 by at least a third electrical path, and the third electrical path is a fourth electrical path. The fourth electrical path is an electrical path from the drain (or second terminal or the like) of the transistor to the source (or first terminal or the like) of the transistor. can do. Using the same expression method as those examples, by defining the connection path in the circuit configuration, the source (or the first terminal or the like) of the transistor and the drain (or the second terminal or the like) are distinguished. The technical scope can be determined.

In addition, these expression methods are examples, and are not limited to these expression methods. Here, it is assumed that X, Y, Z1, and Z2 are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, and the like).

In addition, even when the components shown in the circuit diagram are electrically connected to each other, even when one component has the functions of a plurality of components. There is also. For example, in the case where a part of the wiring also functions as an electrode, one conductive film has both the functions of the constituent elements of the wiring function and the electrode function. Therefore, the term “electrically connected” in this specification includes in its category such a case where one conductive film has functions of a plurality of components.

In this embodiment, the display element 550 (i, j), the display element 550 (i, j + 1), and the display element 550 (i) included in the display panel 700_1 (see FIG. 2B) which is one embodiment of the present invention. , J + 2), the result of evaluating the effect of the micro-optical resonator structure.

As an element constituting the display element 550 (i, j), the display element 550 (i, j + 1), and the display element 550 (i, j + 2), an oxide having indium, tin, and silicon as the conductive film 551_1 (i, j) A physical conductive film was assumed. The conductive film 551_2 (i, j) is an oxide conductive film containing indium and zinc.

FIG. 35 shows a refractive index characteristic N1 calculated from the transmittance obtained by forming an oxide conductive film containing indium, tin, and silicon on a light-transmitting substrate with a thickness of 100 nm. In addition, an oxide conductive film containing indium and zinc is formed to a thickness of 100 nm on a light-transmitting substrate, and a refractive index characteristic N2 calculated from the obtained transmittance is shown. The horizontal axis of FIG. 35 is the wavelength (nm) of light, and the vertical axis is the refractive index. A quartz substrate was used as the light transmissive substrate.

An oxide conductive film having indium, tin, and silicon is formed by using a target having 85% In ₂ O ₃ , 10% SnO ₂ , and 5% SiO ₂ by weight ratio, and using argon gas and oxygen gas. It formed by the used sputtering method. An oxide conductive film containing indium and zinc was formed by a sputtering method using an argon gas and an oxygen gas by using a target having a composition of 25% In ₂ O ₃ and 75% ZnO.

As shown in FIG. 35, the refractive index characteristic N1 and the refractive index characteristic N2 have wavelength dispersion.

The structure of the micro optical resonator structure used in the calculation of this example and the effect of the micro optical resonator structure will be described by comparing the structure MS1 and the structure MS2.

The structure MS1 assumes a display element 550 (i, j) and a display element 550 (i, j + 2) (see FIG. 2B). A light-emitting layer 553 having a thickness of 188 nm and a conductive film 551_1 (i, j) And an oxide conductive film including indium, tin, and silicon with a thickness of 50 nm and an oxide conductive film including indium and zinc with a thickness of 62 nm as the conductive film 551_2 (i, j). (See FIG. 36A).

The structure MS2 assumes a display element 550 (i, j + 1) (see FIG. 2B), a light-emitting layer 553 having a thickness of 188 nm, and an indium having a thickness of 50 nm as the conductive film 551_1 (i, j). And an oxide conductive film containing tin and silicon are stacked (see FIG. 36B).

The electrode 552 was a film made of silver having a thickness of 200 nm. The conductive film 551_0 (i, j) was a film containing silver with a thickness of 25 nm. The refractive index is a physical property value of silver. A structure in which an oxide conductive film having a thickness of 70 nm and containing indium, tin, and silicon is stacked thereon is assumed as the conductive layer 554. The refractive index was as shown in FIG. Further, a structure in which a film having a refractive index of 1.5 is stacked as the insulating film 555 is assumed (see FIGS. 36A and 36B).

The film thickness is set assuming the refractive index of each material in each color as shown below.

Λ = 610 nm is usually evaluated as the wavelength λ representing red, but in order to realize the color gamut of the BT2020 standard, it is desirable to evaluate red at λ = 640 nm, which is the longer wavelength side. Similarly, λ = 460 nm is usually evaluated as the wavelength λ representing blue, but it is desirable to evaluate at λ = 450 nm on the short wavelength side.

As shown in FIG. 35, the refractive index of the oxide conductive film having indium, tin, and silicon is 1.95 in the light of λ = 640 nm which is approximately red, and the light of λ = 530 nm which is approximately green. The refractive index was 2.01, and the refractive index was 2.07 in the light of λ = 450 nm which is approximately blue.

As shown in FIG. 35, the refractive index of the oxide conductive film containing indium and zinc is approximately 2.04 for the light of λ = 640 nm that is red, and is refracted for the light of λ = 530 nm that is approximately green. The refractive index was 2.19 in the light of λ = 450 nm with a refractive index of 2.10 and approximately blue.

The light emitting layer has a refractive index of about 1.8 at any of the above wavelengths.

Even if there is an error of 0 nm or more and 5 nm or less in the film thicknesses of the conductive film 551_1 (i, j) and the conductive film 551_2 (i, j), a minute optical resonator structure is configured for the color of each subpixel. Is effective.

In the structures MS1 and MS2, the light intensity (light intensity) reaching the insulating film 555 was calculated. FIG. 36C shows the calculation result of the light intensity. In FIG. 36C, the horizontal axis represents the wavelength (nm) of light emitted from the light-emitting layer 553, and the vertical axis represents light intensity reaching the insulating film 555.

The light emitting layer 553 emits white light. In FIG. 36C, the light intensity changes depending on the spectrum of light emitted from the light-emitting layer 553. Therefore, the vertical axis in FIG. 36C means a qualitative value, and the exact position of the light emission maximum wavelength may vary depending on the spectrum of light. FIG. 36C shows the result of calculation using calculation software called SETOS manufactured by Cybernet Systems.

The calculation result of the emission spectrum peak shown in FIG. 36C includes the above error, but in the structure MS1, the intensity of the wavelength in the wavelength region of 430 nm to 460 nm showing red and the wavelength of 630 nm to 670 nm showing blue are shown. It can be seen that the intensity of the wavelength in the wavelength region is large. That is, the pixel having the structure MS1 can emit light having a spectrum having a light emission maximum wavelength in any of the wavelength regions.

When the film thicknesses of the conductive film 551_1 (i, j), the conductive film 551_2 (i, j), and the light-emitting layer 553 are set to be larger than the above values, wavelengths that are several times stronger in the visible light region can be formed. In other words, if the distance d0 or the distance d1 between the reflective electrode and the semi-transmissive electrode along the film thickness direction of the semi-transmissive electrode is increased, both blue and red can be increased in the emission intensity of the display element. In addition, light having a large emission intensity appears between blue and red.

Therefore, the setting of the materials and film thicknesses of the structures MS1 and MS2 is effective for the micro optical resonator structure to emit high-purity color.

The minute optical resonator structure has a predetermined value for the optical distance at each wavelength of light to be displayed between the reflective electrode and the semi-transmissive conductive film. R02 can resonate.

For example, in the structure MS1, the optical distance at a wavelength of 640 nm which is red is 556.18 nm. In structure MS2, the optical distance at a wavelength of 530 nm, which is green, was 438.9 nm. In structure MS1, the optical distance at a wavelength of 450 nm which is blue was 577.78 nm.

When the materials of the conductive film 551_1 (i, j), the conductive film 551_2 (i, j), and the light-emitting layer 553 are changed, the above-described normalized optical distance does not change for the refractive index and film thickness of each film. By setting to, the effect of the same minute optical resonator structure can be obtained.

The structure described in this example can be combined as appropriate with any of the structures described in the other embodiments.

ACF1 Conductive material AF1 Alignment film AF2 Alignment film ANO Conductive film B01 Light B02 Light BM Light shielding film BR Conductive film C Electrode C1 Arrow C2 Arrow C11 Capacitance element C12 Capacitance element C21 Capacitance element CF1 Colored film CF2 Colored film CP Conductive material CSCOM Wiring d0 Distance d1 distance flexible printed circuit board FPC1
G01 light G1 scanning line G02 light G2 scanning line GD drive circuit GDA drive circuit GDB drive circuit GDC drive circuit GDD drive circuit KB1 structure L1 light L2 light M transistor M (h) electrode MD transistor ML detection signal line MS1 structure MS2 structure N1 Refractive index characteristic N2 Refractive index characteristic P1 Position information R01 Light R1 Arrow R02 Light R2 Arrow S1 Signal line S2 Signal line SD Drive circuit SD1 Drive circuit SD2 Drive circuit SE1 Detection information SS Control information SW1 Switch SW2 Switch V1 Image information V11 Information V12 Information VCOM1 Wiring VCOM2 Conductive film X0 Adjacent part 10a Gray tone mask 10b Halftone mask 13 Light transmissive substrate 15 Light shielding film 17 Light shielding part 18 Diffraction grating part 19 Transmission part 23 Semi light transmission film 25 Light shielding film 27 Light shielding film 27 Light unit 28 Semi-light transmission unit 29 Transmission unit 200 Information processing device 210 Calculation device 211 Calculation unit 212 Storage unit 214 Transmission path 215 Input / output interface 220 Input / output device 230 Display unit 231 Display area 234 Expansion circuit 235M Image processing circuit 238 Control unit 240 Input unit 241 Detection region 250 Detection unit 290 Communication unit 501A Insulating film 501B Insulating film 501C Insulating film 503 Insulating film 504 Conductive film 504E Conductive film 505 Bonding layer 506 Insulating film 508 Semiconductor film 508A Region 508B Region 508C Region 511B Conductive film 511C Conductive Film 512A conductive film 512B conductive film 512C conductive film 512D conductive film 516 insulating film 518 insulating film 519B terminal 519C terminal 520 functional layer 521 insulating film 521A insulating film 521B insulating film 522 Connection part 522A Connection part 522B Connection part 524 Conductive film 528 Insulating film 530 Pixel circuit 541 Resist mask 542 Resist mask 550 Display element 551 Electrode 551_0 Conductive film 551_1 Conductive film 551_2 Conductive film 552 Electrode 553 Layer 553M Central part 554 Conductive layer 555 Insulating film 570 Substrate 573 Insulating film 573A Insulating film 573B Insulating film 591A Opening 591B Opening 591C Opening 592A Opening 592B Opening 592C Opening 700 Display panel 700_1 Display panel 700_2 Display panel 700_3 Display panel 700_3B Display panel 700_4 Display panel 700B Display panel 700B 702 Pixel 703 Pixel 705 Sealing material 719 Terminal 750 Display element 751 Electrode 751E Region 751H Opening 752 Electricity Pole 753 Layer 754A Intermediate film 754B Intermediate film 754C Intermediate film 770 Substrate 770D Functional film 770P Functional film 771 Insulating film 775 Sensing element 900 Pixel 900s Light-shielding area 900t Transmission area 901 Driving circuit 902 Wiring 904 Wiring 906 Wiring 910 Transistor 911 Transistor 912 Transistor 913 Capacitance element 916B Light emitting area 916G Light emitting area 916R Light emitting area 930EL Light emitting element 5200B Information processing device 5210 Arithmetic device 5220 Input / output device 5230 Display unit 5240 Input unit 5250 Detection unit 5290 Communication unit

Claims (8)

A first pixel and a second pixel;
Each of the first pixel and the second pixel includes a light emitting layer, a first conductive film, a second conductive film, and a third conductive film,
The first conductive film has light transmittance and light reflectivity,
The second conductive film has light reflectivity,
The third conductive film is light transmissive,
The first conductive film is formed so as to sandwich the third conductive film between the second conductive film,
The light emitting layer is formed so as to be sandwiched between the second conductive film and the third conductive film,
The first pixel includes a first distance between the first conductive film and the second conductive film,
The second pixel includes a second distance between the first conductive film and the second conductive film,
The second distance is equal to the first distance;
The first pixel emits light having a spectrum having a light emission maximum wavelength in a wavelength region of 630 nm to 670 nm.
The second pixel is a display panel that emits light having a spectrum having a light emission maximum wavelength in a wavelength region of 430 nm to 460 nm. A first pixel and a second pixel;
Each of the first pixel and the second pixel includes a light emitting layer, a first conductive film, a second conductive film, and a third conductive film,
The first conductive film has light reflectivity,
The second conductive film has light transmittance and light reflectivity,
The third conductive film is light transmissive,
The first conductive film is formed so as to sandwich the third conductive film between the second conductive film,
The light emitting layer is formed so as to be sandwiched between the second conductive film and the third conductive film,
The first pixel includes a first distance between the first conductive film and the second conductive film,
The second pixel includes a second distance between the first conductive film and the second conductive film,
The second distance is equal to the first distance;
The first pixel emits light having a spectrum having a light emission maximum wavelength in a wavelength region of 630 nm to 670 nm.
The second pixel is a display panel that emits light having a spectrum having a light emission maximum wavelength in a wavelength region of 430 nm to 460 nm. In claim 1 or claim 2,
A third pixel;
The third pixel includes the light emitting layer, the first conductive film, the second conductive film, and the third conductive film,
The third pixel includes a third distance between the first conductive film and the second conductive film,
The third distance is different from the first distance,
The third pixel is a display panel that emits green light. In claim 1 or claim 2,
A fourth conductive film;
The fourth conductive film has optical transparency.
In the first pixel, the fourth conductive film is disposed so as to be sandwiched between the light emitting layer and the third conductive film,
In the second pixel, the fourth conductive film is disposed so as to be sandwiched between the light emitting layer and the third conductive film,
In the first pixel, the third conductive film has a first film thickness,
In the second pixel, the third conductive film has a second film thickness,
In the first pixel, the fourth conductive film has a third film thickness,
In the second pixel, the fourth conductive film has a fourth film thickness,
The first film thickness is equal to the second film thickness,
A display panel in which the third film thickness is equal to the fourth film thickness. In claim 4,
The display panel of the third conductive film has a lower etching rate in one etching atmosphere than the fourth conductive film. In claim 4,
The third conductive film is a display panel having a lower etching rate when one solution is used than the fourth conductive film. One or more of a keyboard, a hardware button, a pointing device, a touch sensor, an illuminance sensor, an imaging device, a voice input device, a line-of-sight input device, and a posture detection device; and the display panel according to claim 1 or 2, Including an information processing apparatus. Forming a first conductive film;
Forming a second conductive film above the first conductive film;
Forming a third conductive film above the second conductive film;
Forming a mask having a first region and a second region having a thickness smaller than the thickness of the first region above the third conductive film;
A first step of removing a portion of the first conductive film, the second conductive film, and the third conductive film that does not overlap the mask;
After the first step, a second step of removing the mask in the second region by retracting the mask;
After the second step, a third step of removing a portion of the third conductive film overlapping the second region;
Removing the mask after the third step;
Forming a light emitting layer above the second conductive film or the third conductive film;
Forming a fourth conductive film over the light-emitting layer. A method for manufacturing a display panel, comprising:

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