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WO2018037801A1 - High-frequency heating device - Google Patents

High-frequency heating device Download PDF

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Publication number
WO2018037801A1
WO2018037801A1 PCT/JP2017/026619 JP2017026619W WO2018037801A1 WO 2018037801 A1 WO2018037801 A1 WO 2018037801A1 JP 2017026619 W JP2017026619 W JP 2017026619W WO 2018037801 A1 WO2018037801 A1 WO 2018037801A1
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WO
WIPO (PCT)
Prior art keywords
surface wave
unit
heating device
microwave
frequency heating
Prior art date
Application number
PCT/JP2017/026619
Other languages
French (fr)
Japanese (ja)
Inventor
岡島　利幸
大森　義治
吉野　浩二
貴紀 廣部
上島　博幸
Original Assignee
パナソニックＩｐマネジメント株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パナソニックＩｐマネジメント株式会社 filed Critical パナソニックＩｐマネジメント株式会社
Priority to JP2018535537A priority Critical patent/JPWO2018037801A1/en
Publication of WO2018037801A1 publication Critical patent/WO2018037801A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/707—Feed lines using waveguides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/705—Feed lines using microwave tuning

Definitions

  • This disclosure relates to a high-frequency heating device such as a microwave oven.
  • Patent Document 1 discloses a high-frequency heating device that thaws frozen sushi placed on a surface wave transmission line by supplying microwaves directly to the surface wave transmission line.
  • Patent Document 1 has a problem that the heating region cannot be controlled.
  • An object of this indication is to provide the high frequency heating apparatus which contributes to the solution of the said subject.
  • the high-frequency heating device includes a generation unit, a surface wave exciter, a plurality of coupling units, and a phase variable unit.
  • the generation unit generates a microwave.
  • the surface wave exciter has a periodic structure and heats the object to be heated by propagating microwaves in the surface wave mode.
  • the plurality of coupling portions are provided at the end of the surface wave exciter and supply microwaves to the surface wave exciter.
  • the phase varying unit changes the phase difference between the plurality of microwaves to be supplied to the surface wave exciter through the plurality of coupling units.
  • the position of the heating region and the degree of heating in the heating region can be controlled by changing the direction of the electric field distribution formed on the surface wave exciter.
  • FIG. 1 is a longitudinal sectional view schematically showing the configuration of the high-frequency heating device according to Embodiment 1.
  • FIG. FIG. 2 is a block diagram schematically showing the configuration of the high-frequency heating device according to the first embodiment.
  • FIG. 3 is a diagram showing the interval between the coupling portions arranged in the surface wave exciter.
  • FIG. 4A is a diagram illustrating an example of the electric field distribution of the surface wave exciter when the phase difference of the microwave is changed.
  • FIG. 4B is a diagram illustrating an example of the electric field distribution of the surface wave exciter when the phase difference of the microwave is changed.
  • FIG. 4C is a diagram illustrating an example of the electric field distribution of the surface wave exciter when the phase difference of the microwave is changed.
  • FIG. 4A is a diagram illustrating an example of the electric field distribution of the surface wave exciter when the phase difference of the microwave is changed.
  • FIG. 4B is a diagram illustrating an example of the electric field distribution of the surface wave exc
  • FIG. 5A is a perspective view showing an example of a pin-type stub structure.
  • FIG. 5B is a perspective view illustrating an example of a pin-type stub structure.
  • FIG. 6 is a diagram illustrating an example of an arrangement position of the coupling portion provided in the surface wave exciter.
  • FIG. 7 is a block diagram schematically showing the configuration of the high-frequency heating device according to the first modification of the first embodiment.
  • FIG. 8 is a block diagram schematically showing the configuration of the high-frequency heating device according to the second modification of the first embodiment.
  • FIG. 9 is a block diagram schematically showing the configuration of the high-frequency heating device according to the third modification of the first embodiment.
  • FIG. 10 is a block diagram schematically showing the configuration of the high-frequency heating device according to the fourth modification of the first embodiment.
  • FIG. 11A is a diagram illustrating an example of a method of distributing microwaves.
  • FIG. 11B is a diagram illustrating an example of a method of distributing microwaves.
  • FIG. 12 is a block diagram schematically showing the configuration of the high-frequency heating device according to the second embodiment.
  • FIG. 13 is a block diagram schematically showing the configuration of the high-frequency heating device according to the third embodiment.
  • the high-frequency heating device includes a generation unit, a surface wave exciter, a plurality of coupling units, and a phase variable unit.
  • the generation unit generates a microwave.
  • the surface wave exciter has a periodic structure and heats the object to be heated by propagating microwaves in the surface wave mode.
  • the plurality of coupling portions are provided at the end of the surface wave exciter and supply microwaves to the surface wave exciter.
  • the phase varying unit changes the phase difference between the plurality of microwaves to be supplied to the surface wave exciter through the plurality of coupling units.
  • the plurality of microwaves are directed to the surface wave exciter in the same direction via at least two of the plurality of coupling parts. Supplied.
  • the plurality of coupling units are arranged at intervals of 1/4 or more of the wavelength of the microwave generated by the generation unit.
  • the high frequency heating device of the fourth aspect of the present disclosure in the second aspect, at least two coupling parts, and at least two coupling parts different from the at least two coupling parts among the plurality of coupling parts; Through these, a plurality of microwaves are supplied to the surface wave exciter in different directions.
  • the high-frequency heating device further includes a distribution unit configured to distribute the microwave generated by the generation unit, in addition to the first aspect.
  • the phase variable unit is provided between the distribution unit and the generation unit.
  • the generation unit has a phase variable function.
  • the generation unit includes a first generation unit and a second generation unit.
  • the second generation unit generates a microwave having a frequency different from that of the microwave generated by the first generation unit.
  • the plurality of microwaves generated by the first generation unit and the second generation unit are supplied to the surface wave exciter through at least two coupling units among the plurality of coupling units.
  • the high-frequency heating device synthesizes the microwave generated by the first generation unit and the microwave generated by the second generation unit.
  • the apparatus further includes a synthesis unit that supplies the microwave to the coupling unit.
  • the high-frequency heating device of the present disclosure is specifically a microwave oven.
  • the high-frequency heating device of the present disclosure is not limited to this, and includes a heating device using dielectric heating, a garbage disposal machine, a semiconductor manufacturing device, and the like.
  • FIG. 1 is a vertical cross-sectional view schematically showing a configuration of a high-frequency heating device 1A according to Embodiment 1 of the present disclosure.
  • FIG. 2 is a block diagram schematically showing the configuration of the high-frequency heating device 1A.
  • the high-frequency heating device 1A includes a heating chamber 2, a mounting table 4, a surface wave exciter 10, coupling portions 12a and 12b, and a power feeding block 30A.
  • the high-frequency heating device 1 ⁇ / b> A is a microwave oven that heats the heating object 6 placed on the placing table 4.
  • the power supply block 30 ⁇ / b> A includes a generation unit 8, a phase variable unit 14, a control unit 15, and a distribution unit 16.
  • the power feeding block 30A generates a microwave and supplies the microwave to the surface wave exciter 10 through the coupling portions 12a and 12b.
  • the generation unit 8 includes a magnetron and an inverter, and is configured to generate a microwave in response to an instruction from the control unit 15.
  • the generation unit 8 may be configured by a solid state oscillator and a power amplifier.
  • the surface wave exciter 10 is provided below the mounting table 4.
  • the surface wave exciter 10 propagates microwaves in a surface wave mode.
  • the heating object 6 mounted on the mounting table 4 is heated by the microwave propagating through the surface wave exciter 10 in the surface wave mode.
  • the surface wave exciter 10 is a stub type surface wave exciter that is a metal periodic structure.
  • the surface wave exciter 10 includes a plurality of metal plates 11 arranged on the metal plate 13 at predetermined intervals.
  • the surface wave exciter 10 may be an interdigital surface wave exciter obtained by punching a metal plate into a crossed finger shape instead of the stub surface wave exciter.
  • the surface wave exciter 10 may be made of a dielectric plate such as an alumina plate or a bakelite plate instead of the metal periodic structure.
  • the excitation frequency of the surface wave exciter 10 depends on the material and dimensions. In the case of a stub type surface wave exciter, the excitation frequency can be set to a desired value by appropriately selecting the height, interval, etc. of the metal plate 11. Generally, the excitation frequency of the surface wave exciter 10 is higher as the height of the metal plate 11 is lower and is higher as the interval between the metal plates 11 is narrower.
  • the metal plates 11 are arranged in parallel to each other.
  • the surface wave exciter 10 propagates a surface wave in a direction perpendicular to the metal plate 11, that is, in the arrangement direction of the metal plates 11.
  • the propagation direction of the microwave propagating in the surface wave mode on the surface wave exciter 10 coincides with the arrangement direction of the metal plates 11.
  • the coupling units 12 a and 12 b supply the microwave generated by the generation unit 8 to the surface wave exciter 10. In this embodiment, it is necessary to provide at least two coupling portions.
  • Microwaves are supplied to the surface wave exciter 10 in the same direction via the coupling parts 12a and 12b.
  • “Same direction” means that the supply directions of the main components of the plurality of microwaves are substantially the same.
  • the “same direction” includes directions within the allowable range from the completely same direction.
  • the allowable range is, for example, a range of less than 45 °, and preferably a range of less than 10 °.
  • the surface wave exciter 10 has a rectangular shape when viewed from above.
  • the coupling portions 12 a and 12 b are provided in contact with the same side of the surface wave exciter 10.
  • microwaves having the same frequency and different phases are supplied to the surface wave exciter 10 through the coupling portions 12a and 12b.
  • FIG. 3 is a diagram showing the interval between two adjacent coupling portions (coupling portions 12a and 12b) provided in the surface wave exciter 10. As shown in FIG. As shown in FIG. 3, the coupling portions 12 a and 12 b are arranged with a gap Wa. The interval Wa is 1 ⁇ 4 or more of the wavelength of the microwave generated by the generation unit 8. With this configuration, microwave interference between the coupling portions 12a and 12b is suppressed.
  • the control unit 15 controls the generation unit 8 so as to generate a microwave or stop the microwave.
  • the control unit 15 instructs the phase variable unit 14 on the amount of microwave phase shift.
  • the distribution unit 16 distributes the microwave input from the generation unit 8 in two.
  • the distributor 16 can be a Wilkinson type distributor, a hybrid coupler, or a resistance distributor.
  • the phase variable unit 14 is provided between the distribution unit 16 and the coupling unit 12a.
  • the phase variable unit 14 changes the phase of the microwave from the distribution unit 16 in accordance with an instruction from the control unit 15.
  • a bit step variable phase shifter (Bit step variable phase shifter) or a continuously variable phase shifter (Continuously variable phase shifter) can be applied to the phase variable unit 14.
  • the generation unit 8 generates a microwave.
  • the distribution unit 16 distributes the microwave generated by the generation unit 8 and supplies the microwave to the coupling unit 12 b and the phase variable unit 14.
  • the phase variable unit 14 changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12a. There is a phase difference between the two microwaves supplied to the coupling parts 12a and 12b.
  • the two microwaves are respectively supplied to the surface wave exciter 10 through the coupling portions 12a and 12b.
  • the surface wave exciter 10 propagates two microwaves in the surface wave mode on the surface thereof.
  • an electric field distribution 20 having directivity is formed on the surface wave exciter 10.
  • 4A to 4C show examples of the electric field distribution on the surface wave exciter 10 when the phase difference of the microwave is changed.
  • the electric field distribution 20 is formed to be inclined toward the coupling portion 12b.
  • the electric field distribution 20 is uniformly formed on both sides of the coupling portions 12a and 12b.
  • the electric field distribution 20 is formed to be inclined toward the coupling portion 12a.
  • the directivity of the electric field distribution 20 formed on the surface wave exciter 10 can be controlled by changing the phase difference between the two microwaves. Thereby, the position of the heating region formed on the mounting table 4 can be controlled.
  • control part 15 When heating the heating object 6 uniformly, the control part 15 recognizes the part in which the temperature in the heating object 6 is comparatively low based on the temperature information detected by the temperature sensor (not shown). The control unit 15 controls the phase variable unit 14 so as to intensively heat a portion having a relatively low temperature. Thereby, the heating target object 6 can be heated uniformly.
  • a plurality of microwaves are supplied to the surface wave exciter 10 via the coupling portions 12a and 12b.
  • a plurality of microwaves propagate on the surface of the surface wave exciter 10 in the surface wave mode, a plurality of microwave vectors are combined to form an electric field distribution 20 having directivity.
  • the directivity of the electric field distribution 20 changes by changing the phase difference between the plurality of microwaves to be supplied to the surface wave exciter 10. Thereby, the position of the heating area
  • two coupling parts are provided. Increasing the number of coupling portions improves the accuracy of directivity control of the electric field distribution 20.
  • the generation unit 8 may be a variable frequency type high frequency oscillator. By applying a variable frequency type high frequency oscillator to the generation unit 8, the heating region can be changed into various patterns.
  • the surface wave exciter 10 is composed of a metal periodic structure or a dielectric plate.
  • the surface acoustic wave excitation body 10 may have a pin type stub structure.
  • the pin-type stub structure is a periodic structure having a plurality of columnar pins arranged periodically in the horizontal direction.
  • FIG. 5A and 5B are perspective views showing an example of a pin-type stub structure.
  • a surface acoustic wave exciter 10a shown in FIG. 5A has a quadrangular prism pin.
  • the surface wave exciter 10b shown in FIG. 5B has a cylindrical pin.
  • the surface wave can propagate along the arrangement direction of the pins, that is, in any direction parallel to the horizontal plane where the pins are arranged.
  • the coupling portions 12 a and 12 b are provided in contact with the same side of the surface wave exciter 10.
  • the plurality of coupling portions may be provided on different sides of the surface wave excitation body 10 as long as they are arranged around the surface wave excitation body 10.
  • FIG. 6 shows an example of the arrangement positions of the four coupling portions (coupling portions 12a to 12d) provided in the surface wave exciter 10.
  • a coupling portion group 13 a including coupling portions 12 a and 12 b is provided on one side of the surface wave excitation body 10
  • a coupling portion group 13 b including coupling portions 12 c and 12 d is provided on the other side of the surface wave excitation body 10.
  • the coupling unit groups 13a and 13b correspond to a first coupling unit group and a second coupling unit group, respectively.
  • the degree of heating in the heating region can be controlled by changing the directions of the plurality of electric field distributions formed on the surface wave exciter. For example, when two electric field distributions are overlapped, the degree of heating increases.
  • the coupling portion groups 13a and 13b include two coupling portions, respectively.
  • the coupling part groups 13a and 13b may include three or more coupling parts.
  • the surface wave exciter 10 has a rectangular shape when viewed from above. However, if microwaves are supplied from a plurality of directions, the surface wave exciter 10 may have another shape such as a circle, an ellipse, or a polygon.
  • the coupling portion groups 13 a and 13 b may be provided over three or more sides of the surface wave excitation body 10 as long as the coupling portion groups 13 a and 13 b are arranged around the surface wave excitation body 10.
  • the distribution unit 16 distributes the microwave generated by the generation unit 8.
  • a plurality of generation units may be provided and the distribution unit 16 may be omitted.
  • FIG. 7 is a block diagram schematically showing the configuration of the high-frequency heating device 1B.
  • the high-frequency heating device 1B includes a power feeding block 30B instead of the power feeding block 30A.
  • the power supply block 30 ⁇ / b> B includes a generation unit 8, phase variable units 14 a and 14 b, a control unit 15, and a distribution unit 16.
  • the phase variable unit 14a is provided between the distribution unit 16 and the coupling unit 12a.
  • the phase variable unit 14b is provided between the distribution unit 16 and the coupling unit 12b.
  • the phase variable units 14a and 14b change the phase of the microwave from the distribution unit 16 in accordance with an instruction from the control unit 15, and supply the microwaves with the changed phase to the coupling units 12a and 12b, respectively.
  • the high-frequency heating device 1B of this modification controls the phase difference between the two microwaves using the phase variable sections 14a and 14b, and has the same effect as the high-frequency heating device 1A.
  • FIG. 8 is a block diagram schematically showing the configuration of the high-frequency heating device 1C.
  • the high-frequency heating device 1C includes a power supply block 30C instead of the power supply block 30A.
  • the power supply block 30 ⁇ / b> C includes generation units 8 a and 8 b and a control unit 15.
  • the generation units 8a and 8b have a phase variable function by including a phase variable unit.
  • the generation units 8a and 8b generate a microwave having a phase changed according to an instruction from the control unit 15.
  • the microwave whose phase has changed is supplied from the generator 8a to the coupler 12a, and the microwave whose phase has changed is supplied from the generator 8b to the coupler 12b.
  • the high-frequency heating device 1C has the same effect as the high-frequency heating device 1A.
  • the basic configuration of the high-frequency heating device 1D according to the third modification of the present embodiment is substantially the same as the high-frequency heating device 1A shown in FIG.
  • FIG. 9 is a block diagram schematically showing the configuration of the high-frequency heating device 1D.
  • the high-frequency heating device 1D includes a power supply block 30D instead of the power supply block 30A, and further includes a coupling portion 12c.
  • the power supply block 30 ⁇ / b> D includes a generation unit 8, phase variable units 14 a and 14 b, a control unit 15, and a distribution unit 26.
  • the phase variable unit 14a is provided between the distribution unit 26 and the coupling unit 12a.
  • the phase variable unit 14b is provided between the distribution unit 26 and the coupling unit 12b.
  • the distribution unit 26 distributes the microwave generated by the generation unit 8 into three and supplies the microwave to the coupling unit 12c and the phase variable units 14a and 14b.
  • the phase variable unit 14a changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12a.
  • the phase variable unit 14b changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12b.
  • the directivity of the electric field distribution formed on the surface wave exciter 10 can be improved by increasing the number of coupling portions as compared with the high-frequency heating device 1A.
  • FIG. 10 is a block diagram schematically showing the configuration of the high-frequency heating device 1E.
  • the high-frequency heating device 1E includes a power feeding block 30E instead of the power feeding block 30A, and further includes a coupling portion 12c.
  • the power supply block 30 ⁇ / b> E includes a generation unit 8, phase variable units 14 a, 14 b, 14 c, a control unit 15, and a distribution unit 26.
  • the phase variable unit 14a is provided between the distribution unit 26 and the coupling unit 12a.
  • the phase variable unit 14b is provided between the distribution unit 26 and the coupling unit 12b.
  • the phase varying unit 14c is provided between the distributing unit 26 and the coupling unit 12c.
  • the distribution unit 26 distributes the microwave generated by the generation unit 8 into three and supplies the microwaves to the phase variable units 14a to 14c.
  • the phase variable unit 14a changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12a.
  • the phase variable unit 14b changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12b.
  • the phase variable unit 14c changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12c.
  • the directivity of the electric field distribution formed on the surface wave exciter 10 can be improved by increasing the number of coupling portions as compared with the high-frequency heating device 1A.
  • FIG. 11A and FIG. 11B show examples of how to distribute microwaves.
  • the microwaves are distributed into three using the distribution unit 16a and the distribution unit 16b.
  • the microwaves are distributed into four parts using the distribution unit 16a to the distribution unit 16c.
  • FIG. 12 is a block diagram schematically showing the configuration of the high-frequency heating device 1F.
  • the high-frequency heating device 1F includes a power supply block 30F instead of the power supply block 30A, and further includes coupling portions 12c and 12d.
  • the power supply block 30F includes generation units 8c and 8d, phase variable units 14a and 14b, a control unit 15, and distribution units 16a and 16b.
  • the coupling portions 12a and 12b constitute a coupling portion group 13a that is a first coupling portion group
  • the coupling portions 12c and 12d constitute a coupling portion group 13b that is a second coupling portion group.
  • the generation units 8c and 8d correspond to a first generation unit and a second generation unit, respectively.
  • the generation unit 8c generates a microwave.
  • the distribution unit 16a distributes the microwave generated by the generation unit 8c in two. One of the two distributed microwaves is supplied to the coupling unit 12b, and the other is supplied to the phase variable unit 14a.
  • the phase variable unit 14a changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12a.
  • an electric field distribution 21 having directivity is formed on the surface wave exciter 10.
  • the direction of the electric field distribution 21 can be controlled by phase difference control between the two microwaves.
  • the generating unit 8d generates a microwave having a frequency different from that of the microwave generated by the generating unit 8c.
  • the distribution unit 16b distributes the microwave generated by the generation unit 8d in two. One of the two distributed microwaves is supplied to the coupling unit 12d, and the other is supplied to the phase variable unit 14b.
  • the phase variable unit 14b changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12c.
  • an electric field distribution 22 having directivity is formed on the surface wave exciter 10.
  • the direction of the electric field distribution 22 can be controlled by phase difference control between the two microwaves.
  • the electric field distributions 21 and 22 are formed by microwaves having different frequencies.
  • the electric field distributions 21 and 22 do not interfere with each other, and their directivities can be controlled independently.
  • the region 19 where the electric field distributions 21 and 22 overlap can be formed. Since the electric field is strengthened in the region 19, the heating object placed in the region 19 can be heated intensively.
  • FIG. 13 is a block diagram schematically showing the configuration of the high-frequency heating device 1G.
  • the high-frequency heating device 1G includes a power feeding block 30G instead of the power feeding block 30A.
  • the power supply block 30G includes generation units 8c and 8d, phase variable units 14a and 14b, a control unit 15, distribution units 16a and 16b, and synthesis units 17a and 17b.
  • the synthesizers 17a and 17b output vector sums when the two supplied microwaves have the same frequency, and output the sum when the two supplied microwaves have different frequencies. To do.
  • a Wilkinson coupler, a hybrid coupler, or the like can be applied to the combining units 17a and 17b.
  • the distributing unit 16a distributes the microwave generated by the generating unit 8c in two. One of the two distributed microwaves is supplied to the combining unit 17b, and the other is supplied to the phase variable unit 14a.
  • the phase variable unit 14a changes the phase of the microwave and supplies the microwave with the changed phase to the combining unit 17a.
  • the distributing unit 16b distributes the microwave generated by the generating unit 8d in two. One of the two distributed microwaves is supplied to the synthesis unit 17b, and the other is supplied to the phase variable unit 14b.
  • the phase variable unit 14b changes the phase of the microwave and supplies the microwave with the changed phase to the combining unit 17a.
  • the synthesizing unit 17a synthesizes two microwaves having different frequencies and supplies the synthesized microwaves to the coupling unit 12a.
  • the surface wave exciter 10 is supplied with microwaves having two frequency components via the coupling portion 12a.
  • the synthesizing unit 17b synthesizes two microwaves having different frequencies whose phases are changed, and supplies the synthesized microwaves to the coupling unit 12b.
  • the surface wave exciter 10 is supplied with microwaves having two frequency components via the coupling portion 12b.
  • the electric field distribution 23 and the electric field distribution 24 are formed on the surface wave exciter 10.
  • the directions of the electric field distributions 23 and 24 can be controlled by phase difference control by the phase variable units 14a and 14b.
  • the electric field distributions 23 and 24 are formed by microwaves having different frequencies.
  • the electric field distributions 23 and 24 do not interfere with each other, and their directivities can be controlled independently.
  • the heating object can be heated intensively in the region where the electric field distributions 23 and 24 overlap.
  • the present disclosure can be applied to a microwave oven, a drying apparatus, a ceramic heating apparatus, a garbage disposal machine, a semiconductor manufacturing apparatus, and the like.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
  • Constitution Of High-Frequency Heating (AREA)

Abstract

This high-frequency heating device (1A) is provided with a generator (8), a surface wave exciter (10), couplers (12a, 12b), and a phase change unit (14). The generator (8) generates microwaves. The surface wave exciter (10) has a periodic structure and propagates microwaves in a surface wave mode to heat an object to be heated (6). Multiple microwaves are supplied to the surface wave exciter (10) over the multiple couplers (12a, 12b) provided at the end of the surface wave exciter (10). The phase change unit (14) changes the phase difference between the multiple microwaves. With this invention, by changing the orientation of the electric field distribution (20) formed on the surface wave exciter (10), it is possible to control the position of the heating region and the degree of heating in the heating region.

Description

高周波加熱装置High frequency heating device
　本開示は、電子レンジなどの高周波加熱装置に関する。 This disclosure relates to a high-frequency heating device such as a microwave oven.
　従来、表面波伝送線路にマイクロ波を供給して、食品などの加熱対象物を加熱する高周波加熱装置が開発されている。 Conventionally, a high-frequency heating apparatus for supplying a microwave to a surface wave transmission line and heating an object to be heated such as food has been developed.
　例えば、特許文献１は、表面波伝送線路に直接的にマイクロ波を供給することで、表面波伝送線路に載置された冷凍寿司を解凍する高周波加熱装置を開示する。 For example, Patent Document 1 discloses a high-frequency heating device that thaws frozen sushi placed on a surface wave transmission line by supplying microwaves directly to the surface wave transmission line.
特開平８－１６６１３３号公報JP-A-8-166133
　しかしながら、特許文献１に記載の高周波加熱装置は、加熱領域を制御することができないという課題を有する。本開示は、上記課題の解決に寄与する高周波加熱装置を提供することを目的とする。 However, the high-frequency heating device described in Patent Document 1 has a problem that the heating region cannot be controlled. An object of this indication is to provide the high frequency heating apparatus which contributes to the solution of the said subject.
　本開示の一態様の高周波加熱装置は、生成部と表面波励振体と複数の結合部と位相可変部とを備える。生成部はマイクロ波を生成する。表面波励振体は、周期構造体を有し、マイクロ波を表面波モードで伝播させて加熱対象物を加熱する。 The high-frequency heating device according to one aspect of the present disclosure includes a generation unit, a surface wave exciter, a plurality of coupling units, and a phase variable unit. The generation unit generates a microwave. The surface wave exciter has a periodic structure and heats the object to be heated by propagating microwaves in the surface wave mode.
　複数の結合部は、表面波励振体の端部に設けられ、マイクロ波を表面波励振体に供給する。位相可変部は、複数の結合部を介して表面波励振体に供給されるための複数のマイクロ波の間の位相差を変化させる。 The plurality of coupling portions are provided at the end of the surface wave exciter and supply microwaves to the surface wave exciter. The phase varying unit changes the phase difference between the plurality of microwaves to be supplied to the surface wave exciter through the plurality of coupling units.
　本態様によれば、表面波励振体上に形成される電界分布の向きを変化させることにより、加熱領域の位置と加熱領域における加熱の度合いとを制御することができる。 According to this aspect, the position of the heating region and the degree of heating in the heating region can be controlled by changing the direction of the electric field distribution formed on the surface wave exciter.
図１は、実施の形態１に係る高周波加熱装置の構成を模式的に示す縦断面図である。FIG. 1 is a longitudinal sectional view schematically showing the configuration of the high-frequency heating device according to Embodiment 1. FIG. 図２は、実施の形態１に係る高周波加熱装置の構成を模式的に示すブロック図である。FIG. 2 is a block diagram schematically showing the configuration of the high-frequency heating device according to the first embodiment. 図３は、表面波励振体に配置された結合部の間隔を示す図である。FIG. 3 is a diagram showing the interval between the coupling portions arranged in the surface wave exciter. 図４Ａは、マイクロ波の位相差を変化させた場合における表面波励振体の電界分布の例を示す図である。FIG. 4A is a diagram illustrating an example of the electric field distribution of the surface wave exciter when the phase difference of the microwave is changed. 図４Ｂは、マイクロ波の位相差を変化させた場合における表面波励振体の電界分布の例を示す図である。FIG. 4B is a diagram illustrating an example of the electric field distribution of the surface wave exciter when the phase difference of the microwave is changed. 図４Ｃは、マイクロ波の位相差を変化させた場合における表面波励振体の電界分布の例を示す図である。FIG. 4C is a diagram illustrating an example of the electric field distribution of the surface wave exciter when the phase difference of the microwave is changed. 図５Ａは、ピン型スタブ構造の例を示す斜視図である。FIG. 5A is a perspective view showing an example of a pin-type stub structure. 図５Ｂは、ピン型スタブ構造の例を示す斜視図である。FIG. 5B is a perspective view illustrating an example of a pin-type stub structure. 図６は、表面波励振体に設けられた結合部の配置位置の例を示す図である。FIG. 6 is a diagram illustrating an example of an arrangement position of the coupling portion provided in the surface wave exciter. 図７は、実施の形態１の第１変形例に係る高周波加熱装置の構成を模式的に示すブロック図である。FIG. 7 is a block diagram schematically showing the configuration of the high-frequency heating device according to the first modification of the first embodiment. 図８は、実施の形態１の第２変形例に係る高周波加熱装置の構成を模式的に示すブロック図である。FIG. 8 is a block diagram schematically showing the configuration of the high-frequency heating device according to the second modification of the first embodiment. 図９は、実施の形態１の第３変形例に係る高周波加熱装置の構成を模式的に示すブロック図である。FIG. 9 is a block diagram schematically showing the configuration of the high-frequency heating device according to the third modification of the first embodiment. 図１０は、実施の形態１の第４変形例に係る高周波加熱装置の構成を模式的に示すブロック図である。FIG. 10 is a block diagram schematically showing the configuration of the high-frequency heating device according to the fourth modification of the first embodiment. 図１１Ａは、マイクロ波の分配の仕方の例を示す図である。FIG. 11A is a diagram illustrating an example of a method of distributing microwaves. 図１１Ｂは、マイクロ波の分配の仕方の例を示す図である。FIG. 11B is a diagram illustrating an example of a method of distributing microwaves. 図１２は、実施の形態２に係る高周波加熱装置の構成を模式的に示すブロック図である。FIG. 12 is a block diagram schematically showing the configuration of the high-frequency heating device according to the second embodiment. 図１３は、実施の形態３に係る高周波加熱装置の構成を模式的に示すブロック図である。FIG. 13 is a block diagram schematically showing the configuration of the high-frequency heating device according to the third embodiment.
　本開示の第１の態様の高周波加熱装置は、生成部と表面波励振体と複数の結合部と位相可変部とを備える。生成部はマイクロ波を生成する。表面波励振体は、周期構造体を有し、マイクロ波を表面波モードで伝播させて加熱対象物を加熱する。 The high-frequency heating device according to the first aspect of the present disclosure includes a generation unit, a surface wave exciter, a plurality of coupling units, and a phase variable unit. The generation unit generates a microwave. The surface wave exciter has a periodic structure and heats the object to be heated by propagating microwaves in the surface wave mode.
　複数の結合部は、表面波励振体の端部に設けられ、マイクロ波を表面波励振体に供給する。位相可変部は、複数の結合部を介して表面波励振体に供給されるための複数のマイクロ波の間の位相差を変化させる。 The plurality of coupling portions are provided at the end of the surface wave exciter and supply microwaves to the surface wave exciter. The phase varying unit changes the phase difference between the plurality of microwaves to be supplied to the surface wave exciter through the plurality of coupling units.
　本開示の第２の態様の高周波加熱装置によれば、第１の態様において、複数の結合部のうちの少なくとも二つの結合部を介して、複数のマイクロ波が表面波励振体に同一方向に供給される。 According to the high-frequency heating device of the second aspect of the present disclosure, in the first aspect, the plurality of microwaves are directed to the surface wave exciter in the same direction via at least two of the plurality of coupling parts. Supplied.
　本開示の第３の態様の高周波加熱装置によれば、第２の態様において、複数の結合部が、生成部により生成されたマイクロ波の波長の１／４以上の間隔で配置される。 According to the high-frequency heating device of the third aspect of the present disclosure, in the second aspect, the plurality of coupling units are arranged at intervals of 1/4 or more of the wavelength of the microwave generated by the generation unit.
　本開示の第４の態様の高周波加熱装置によれば、第２の態様において、少なくとも二つの結合部と、複数の結合部のうちの上記少なくとも二つの結合部とは異なる少なくとも二つの結合部とを介して、複数のマイクロ波が表面波励振体に互いに異なる方向に供給される。 According to the high frequency heating device of the fourth aspect of the present disclosure, in the second aspect, at least two coupling parts, and at least two coupling parts different from the at least two coupling parts among the plurality of coupling parts; Through these, a plurality of microwaves are supplied to the surface wave exciter in different directions.
　本開示の第５の態様の高周波加熱装置は、第１の態様に加えて、生成部により生成されたマイクロ波を分配するように構成された分配部をさらに備える。位相可変部は、分配部と生成部との間に設けられる。 The high-frequency heating device according to the fifth aspect of the present disclosure further includes a distribution unit configured to distribute the microwave generated by the generation unit, in addition to the first aspect. The phase variable unit is provided between the distribution unit and the generation unit.
　本開示の第６の態様の高周波加熱装置によれば、第１の態様において、生成部が、位相可変機能を有する。 According to the high-frequency heating device of the sixth aspect of the present disclosure, in the first aspect, the generation unit has a phase variable function.
　本開示の第７の態様の高周波加熱装置によれば、第１の態様において、生成部が、第１生成部と第２生成部とを含む。第２生成部は、第１生成部により生成されたマイクロ波と異なる周波数のマイクロ波を生成する。第１生成部および第２生成部により生成された複数のマイクロ波が、複数の結合部のうちの少なくとも二つの結合部を介して表面波励振体に供給される。 According to the high-frequency heating device of the seventh aspect of the present disclosure, in the first aspect, the generation unit includes a first generation unit and a second generation unit. The second generation unit generates a microwave having a frequency different from that of the microwave generated by the first generation unit. The plurality of microwaves generated by the first generation unit and the second generation unit are supplied to the surface wave exciter through at least two coupling units among the plurality of coupling units.
　本開示の第８の態様の高周波加熱装置は、第７の態様に加えて、第１生成部により生成されたマイクロ波と第２生成部により生成されたマイクロ波とを合成し、合成されたマイクロ波を結合部に供給する合成部をさらに備える。 In addition to the seventh aspect, the high-frequency heating device according to the eighth aspect of the present disclosure synthesizes the microwave generated by the first generation unit and the microwave generated by the second generation unit. The apparatus further includes a synthesis unit that supplies the microwave to the coupling unit.
　以下、本開示に係る高周波加熱装置の好適な実施の形態について、添付の図面を参照しながら説明する。本開示の高周波加熱装置は、具体的には電子レンジである。しかし、本開示の高周波加熱装置はこれに限定されるものではなく、誘電加熱を利用した加熱装置、生ゴミ処理機、半導体製造装置などを含む。 Hereinafter, preferred embodiments of the high-frequency heating device according to the present disclosure will be described with reference to the accompanying drawings. The high-frequency heating device of the present disclosure is specifically a microwave oven. However, the high-frequency heating device of the present disclosure is not limited to this, and includes a heating device using dielectric heating, a garbage disposal machine, a semiconductor manufacturing device, and the like.
　以下の説明において、同一または同等の構成要素には同じ参照符号を付し、重複する説明を省略する。 In the following description, the same or equivalent components are denoted by the same reference numerals, and duplicate descriptions are omitted.
　（実施の形態１）
　［基本構成］
　図１は、本開示の実施の形態１に係る高周波加熱装置１Ａの構成を模式的に示す縦断面図である。図２は、高周波加熱装置１Ａの構成を模式的に示すブロック図である。 (Embodiment 1)
[Basic configuration]
FIG. 1 is a vertical cross-sectional view schematically showing a configuration of a high-frequency heating device 1A according to Embodiment 1 of the present disclosure. FIG. 2 is a block diagram schematically showing the configuration of the high-frequency heating device 1A.
　図１に示すように、高周波加熱装置１Ａは、加熱室２と載置台４と表面波励振体１０と結合部１２ａ、１２ｂと給電ブロック３０Ａとを備える。高周波加熱装置１Ａは、載置台４上に載置された加熱対象物６を加熱する電子レンジである。 As shown in FIG. 1, the high-frequency heating device 1A includes a heating chamber 2, a mounting table 4, a surface wave exciter 10, coupling portions 12a and 12b, and a power feeding block 30A. The high-frequency heating device 1 </ b> A is a microwave oven that heats the heating object 6 placed on the placing table 4.
　図２に示すように、給電ブロック３０Ａは、生成部８と位相可変部１４と制御部１５と分配部１６とを備える。給電ブロック３０Ａは、マイクロ波を生成し、結合部１２ａ、１２ｂを介して表面波励振体１０に供給する。 As shown in FIG. 2, the power supply block 30 </ b> A includes a generation unit 8, a phase variable unit 14, a control unit 15, and a distribution unit 16. The power feeding block 30A generates a microwave and supplies the microwave to the surface wave exciter 10 through the coupling portions 12a and 12b.
　以下、各構成要素について説明する。 Hereinafter, each component will be described.
　＜生成部＞
　生成部８は、マグネトロンとインバータとを有し、制御部１５からの指示に応じて、マイクロ波を生成するように構成される。生成部８が、固体発振器と電力増幅器とにより構成されてもよい。 <Generator>
The generation unit 8 includes a magnetron and an inverter, and is configured to generate a microwave in response to an instruction from the control unit 15. The generation unit 8 may be configured by a solid state oscillator and a power amplifier.
　＜表面波励振体＞
　図１に示されるように、表面波励振体１０は、載置台４の下方に設けられる。表面波励振体１０は、マイクロ波を表面波モードで伝播させる。表面波励振体１０を表面波モードで伝播するマイクロ波により、載置台４に載置された加熱対象物６が加熱される。 <Surface wave exciter>
As shown in FIG. 1, the surface wave exciter 10 is provided below the mounting table 4. The surface wave exciter 10 propagates microwaves in a surface wave mode. The heating object 6 mounted on the mounting table 4 is heated by the microwave propagating through the surface wave exciter 10 in the surface wave mode.
　表面波励振体１０は、金属周期構造体であるスタブ型表面波励振体である。表面波励振体１０は、金属板１３上に所定間隔で配置された複数の金属板１１を有する。 The surface wave exciter 10 is a stub type surface wave exciter that is a metal periodic structure. The surface wave exciter 10 includes a plurality of metal plates 11 arranged on the metal plate 13 at predetermined intervals.
　表面波励振体１０は、スタブ型表面波励振体の代わりに、金属板を交差指状に打ち抜いたインターデジタル型表面波励振体でもよい。表面波励振体１０は、金属周期構造体の代わりに、アルミナ板、ベークライト板などの誘電体板で構成されてもよい。 The surface wave exciter 10 may be an interdigital surface wave exciter obtained by punching a metal plate into a crossed finger shape instead of the stub surface wave exciter. The surface wave exciter 10 may be made of a dielectric plate such as an alumina plate or a bakelite plate instead of the metal periodic structure.
　表面波励振体１０の励振周波数は、材料、寸法などに依存する。スタブ型表面波励振体の場合、金属板１１の高さ、間隔などを適切に選択することで、励振周波数を所望の値に設定することができる。一般的に、表面波励振体１０の励振周波数は、金属板１１の高さが低いほど高く、金属板１１の間隔が狭いほど高い。 The excitation frequency of the surface wave exciter 10 depends on the material and dimensions. In the case of a stub type surface wave exciter, the excitation frequency can be set to a desired value by appropriately selecting the height, interval, etc. of the metal plate 11. Generally, the excitation frequency of the surface wave exciter 10 is higher as the height of the metal plate 11 is lower and is higher as the interval between the metal plates 11 is narrower.
　金属板１１の各々は、互いに平行に配置される。表面波励振体１０は、金属板１１に垂直な方向、すなわち金属板１１の配列方向に表面波を伝播させる。表面波励振体１０上を、表面波モードで伝播するマイクロ波の伝播方向は、金属板１１の配列方向と一致する。 The metal plates 11 are arranged in parallel to each other. The surface wave exciter 10 propagates a surface wave in a direction perpendicular to the metal plate 11, that is, in the arrangement direction of the metal plates 11. The propagation direction of the microwave propagating in the surface wave mode on the surface wave exciter 10 coincides with the arrangement direction of the metal plates 11.
　＜結合部＞
　結合部１２ａ、１２ｂは、生成部８により生成されたマイクロ波を表面波励振体１０に供給する。本実施の形態では、少なくとも二つの結合部を設けることが必要である。 <Coupling part>
The coupling units 12 a and 12 b supply the microwave generated by the generation unit 8 to the surface wave exciter 10. In this embodiment, it is necessary to provide at least two coupling portions.
　結合部１２ａ、１２ｂを介して、マイクロ波が表面波励振体１０に同一方向に供給される。「同一方向」とは、複数のマイクロ波の主成分の供給方向が実質的に同一であることを意味する。「同一方向」には、完全な同一方向から許容範囲内にある方向も含まれる。許容範囲とは、例えば４５°未満の範囲であり、好ましくは１０°未満の範囲である。 Microwaves are supplied to the surface wave exciter 10 in the same direction via the coupling parts 12a and 12b. “Same direction” means that the supply directions of the main components of the plurality of microwaves are substantially the same. The “same direction” includes directions within the allowable range from the completely same direction. The allowable range is, for example, a range of less than 45 °, and preferably a range of less than 10 °.
　表面波励振体１０は、上側から見て四角形の形状を有する。結合部１２ａ、１２ｂは、表面波励振体１０の同一の辺に接して設けられる。実施の形態１では、結合部１２ａ、１２ｂを介して、同じ周波数で異なる位相のマイクロ波が表面波励振体１０に供給される。 The surface wave exciter 10 has a rectangular shape when viewed from above. The coupling portions 12 a and 12 b are provided in contact with the same side of the surface wave exciter 10. In the first embodiment, microwaves having the same frequency and different phases are supplied to the surface wave exciter 10 through the coupling portions 12a and 12b.
　図３は、表面波励振体１０に設けられた隣接する二つの結合部（結合部１２ａ、１２ｂ）の間隔を示す図である。図３に示すように、結合部１２ａ、１２ｂは、間隔Ｗａを隔てて配置される。間隔Ｗａは、生成部８により生成されたマイクロ波の波長の１／４以上である。この構成により、結合部１２ａ、１２ｂ間でのマイクロ波の干渉が抑制される。 FIG. 3 is a diagram showing the interval between two adjacent coupling portions ( coupling portions 12a and 12b) provided in the surface wave exciter 10. As shown in FIG. As shown in FIG. 3, the coupling portions 12 a and 12 b are arranged with a gap Wa. The interval Wa is ¼ or more of the wavelength of the microwave generated by the generation unit 8. With this configuration, microwave interference between the coupling portions 12a and 12b is suppressed.
　＜制御部＞
　制御部１５は、マイクロ波を生成する、または、マイクロ波を停止するように、生成部８を制御する。制御部１５は、マイクロ波の移相量を位相可変部１４に指示する。 <Control unit>
The control unit 15 controls the generation unit 8 so as to generate a microwave or stop the microwave. The control unit 15 instructs the phase variable unit 14 on the amount of microwave phase shift.
　＜分配部＞
　分配部１６は、生成部８から入力されたマイクロ波を二つに分配する。分配部１６には、ウィルキンソン（Wilkinson）型分配部、ハイブリッドカプラ（Hybrid coupler）または抵抗分配器が適用可能である。 <Distributor>
The distribution unit 16 distributes the microwave input from the generation unit 8 in two. The distributor 16 can be a Wilkinson type distributor, a hybrid coupler, or a resistance distributor.
　＜位相可変部＞
　位相可変部１４は、分配部１６と結合部１２ａとの間に設けられる。位相可変部１４は、制御部１５からの指示に応じて、分配部１６からのマイクロ波の位相を変化させる。 <Phase variable part>
The phase variable unit 14 is provided between the distribution unit 16 and the coupling unit 12a. The phase variable unit 14 changes the phase of the microwave from the distribution unit 16 in accordance with an instruction from the control unit 15.
　位相可変部１４には、ビットステップ可変型移相器（Bit step variable phase shifter）、または、連続可変型移相器（Continuously variable phase shifter）が適用可能である。 A bit step variable phase shifter (Bit step variable phase shifter) or a continuously variable phase shifter (Continuously variable phase shifter) can be applied to the phase variable unit 14.
　以下、本実施の形態に係る高周波加熱装置１Ａの動作について説明する。 Hereinafter, the operation of the high-frequency heating device 1A according to the present embodiment will be described.
　図２に示すように、生成部８はマイクロ波を生成する。分配部１６は、生成部８により生成されたマイクロ波を分配し、結合部１２ｂと位相可変部１４とに供給する。位相可変部１４は、マイクロ波の位相を変化させ、位相の変化したマイクロ波を結合部１２ａに供給する。結合部１２ａ、１２ｂにそれぞれ供給された二つのマイクロ波の間には、位相差が生じる。 As shown in FIG. 2, the generation unit 8 generates a microwave. The distribution unit 16 distributes the microwave generated by the generation unit 8 and supplies the microwave to the coupling unit 12 b and the phase variable unit 14. The phase variable unit 14 changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12a. There is a phase difference between the two microwaves supplied to the coupling parts 12a and 12b.
　二つのマイクロ波は、結合部１２ａ、１２ｂを介して表面波励振体１０にそれぞれ供給される。表面波励振体１０は、その表面上で表面波モードの二つのマイクロ波を伝播させる。二つのマイクロ波のベクトルが表面波励振体１０の表面で合成されると、指向性を有する電界分布２０が表面波励振体１０上に形成される。 The two microwaves are respectively supplied to the surface wave exciter 10 through the coupling portions 12a and 12b. The surface wave exciter 10 propagates two microwaves in the surface wave mode on the surface thereof. When two microwave vectors are synthesized on the surface of the surface wave exciter 10, an electric field distribution 20 having directivity is formed on the surface wave exciter 10.
　図４Ａ～図４Ｃは、マイクロ波の位相差を変化させた場合における表面波励振体１０上の電界分布の例を示す。 4A to 4C show examples of the electric field distribution on the surface wave exciter 10 when the phase difference of the microwave is changed.
　図４Ａに示すように、二つのマイクロ波の位相差がθ１に設定された場合、電界分布２０は、結合部１２ｂの側に傾いて形成される。 As shown in FIG. 4A, when the phase difference between the two microwaves is set to θ1, the electric field distribution 20 is formed to be inclined toward the coupling portion 12b.
　図４Ｂに示すように、二つのマイクロ波の位相差がθ２に設定された場合、電界分布２０は、結合部１２ａ、１２ｂの両方の側に均等に形成される。 As shown in FIG. 4B, when the phase difference between the two microwaves is set to θ2, the electric field distribution 20 is uniformly formed on both sides of the coupling portions 12a and 12b.
　図４Ｃに示すように、二つのマイクロ波の位相差がθ３に設定された場合、電界分布２０は、結合部１２ａの側に傾いて形成される。 As shown in FIG. 4C, when the phase difference between the two microwaves is set to θ3, the electric field distribution 20 is formed to be inclined toward the coupling portion 12a.
　本実施の形態によれば、二つのマイクロ波の間の位相差を変化させることにより、表面波励振体１０上に形成される電界分布２０の指向性を制御することができる。これにより、載置台４の上に形成される加熱領域の位置を制御することができる。 According to the present embodiment, the directivity of the electric field distribution 20 formed on the surface wave exciter 10 can be controlled by changing the phase difference between the two microwaves. Thereby, the position of the heating region formed on the mounting table 4 can be controlled.
　加熱対象物６を均一に加熱する場合、制御部１５は、温度センサ（不図示）により検出された温度情報に基づいて、加熱対象物６における温度が比較的低い部分を認識する。制御部１５は、温度が比較的低い部分を重点的に加熱するように、位相可変部１４を制御する。これにより、加熱対象物６を均一に加熱することができる。 When heating the heating object 6 uniformly, the control part 15 recognizes the part in which the temperature in the heating object 6 is comparatively low based on the temperature information detected by the temperature sensor (not shown). The control unit 15 controls the phase variable unit 14 so as to intensively heat a portion having a relatively low temperature. Thereby, the heating target object 6 can be heated uniformly.
　本実施の形態では、複数のマイクロ波が、結合部１２ａ、１２ｂを介して表面波励振体１０に供給される。複数のマイクロ波が、表面波励振体１０の表面を表面波モードで伝播する際に、複数のマイクロ波のベクトルが合成され、指向性を有する電界分布２０が形成される。 In the present embodiment, a plurality of microwaves are supplied to the surface wave exciter 10 via the coupling portions 12a and 12b. When a plurality of microwaves propagate on the surface of the surface wave exciter 10 in the surface wave mode, a plurality of microwave vectors are combined to form an electric field distribution 20 having directivity.
　本実施の形態によれば、表面波励振体１０に供給されるための複数のマイクロ波の間の位相差を変化させることにより、電界分布２０の指向性が変化する。これにより、加熱対象物６を加熱する加熱領域の位置を制御することができる。 According to the present embodiment, the directivity of the electric field distribution 20 changes by changing the phase difference between the plurality of microwaves to be supplied to the surface wave exciter 10. Thereby, the position of the heating area | region which heats the heating target object 6 can be controlled.
　本実施の形態では、二つの結合部が設けられる。結合部の数を増やすと、電界分布２０の指向性制御の精度が向上する。 In this embodiment, two coupling parts are provided. Increasing the number of coupling portions improves the accuracy of directivity control of the electric field distribution 20.
　生成部８は、周波数可変型の高周波発振器であってもよい。周波数可変型の高周波発振器を生成部８に適用することにより、加熱領域を様々なパターンに変化させることができる。 The generation unit 8 may be a variable frequency type high frequency oscillator. By applying a variable frequency type high frequency oscillator to the generation unit 8, the heating region can be changed into various patterns.
　本実施の形態では、表面波励振体１０は、金属周期構造体または誘電体板で構成される。しかし、表面波励振体１０がピン型スタブ構造を有してもよい。ピン型スタブ構造とは、水平方向に周期的に配置された複数の柱状のピンを有する周期構造体である。 In the present embodiment, the surface wave exciter 10 is composed of a metal periodic structure or a dielectric plate. However, the surface acoustic wave excitation body 10 may have a pin type stub structure. The pin-type stub structure is a periodic structure having a plurality of columnar pins arranged periodically in the horizontal direction.
　図５Ａ、図５Ｂは、ピン型スタブ構造の例を示す斜視図である。図５Ａに示す表面波励振体１０ａは、四角柱形状のピンを有する。図５Ｂに示す表面波励振体１０ｂは、円柱形状のピンを有する。表面波励振体１０ａおよび表面波励振体１０ｂにおいて、ピンの配列方向に沿って、すなわち、ピンが配置された水平面に平行な任意の方向に表面波が伝播することができる。 5A and 5B are perspective views showing an example of a pin-type stub structure. A surface acoustic wave exciter 10a shown in FIG. 5A has a quadrangular prism pin. The surface wave exciter 10b shown in FIG. 5B has a cylindrical pin. In the surface wave exciter 10a and the surface wave exciter 10b, the surface wave can propagate along the arrangement direction of the pins, that is, in any direction parallel to the horizontal plane where the pins are arranged.
　実施の形態１では、結合部１２ａ、１２ｂが表面波励振体１０の同一の辺に接して設けられる。しかし、複数の結合部は、表面波励振体１０の周囲に配置されていれば、表面波励振体１０の異なる辺に設けられてもよい。 In the first embodiment, the coupling portions 12 a and 12 b are provided in contact with the same side of the surface wave exciter 10. However, the plurality of coupling portions may be provided on different sides of the surface wave excitation body 10 as long as they are arranged around the surface wave excitation body 10.
　図６は、表面波励振体１０に設けられた四つの結合部（結合部１２ａ～１２ｄ）の配置位置の例を示す。図６において、結合部１２ａ、１２ｂを含む結合部群１３ａが表面波励振体１０の一つの辺に設けられ、結合部１２ｃ、１２ｄを含む結合部群１３ｂが表面波励振体１０の他の辺に設けられる。結合部群１３ａ、１３ｂは、第１結合部群、第２結合部群にそれぞれ相当する。 FIG. 6 shows an example of the arrangement positions of the four coupling portions (coupling portions 12a to 12d) provided in the surface wave exciter 10. In FIG. 6, a coupling portion group 13 a including coupling portions 12 a and 12 b is provided on one side of the surface wave excitation body 10, and a coupling portion group 13 b including coupling portions 12 c and 12 d is provided on the other side of the surface wave excitation body 10. Is provided. The coupling unit groups 13a and 13b correspond to a first coupling unit group and a second coupling unit group, respectively.
　結合部群１３ａ、１３ｂを介して供給されるマイクロ波の周波数が同じ場合、電界分布の指向性の精度を向上させることができる。 When the frequencies of the microwaves supplied through the coupling unit groups 13a and 13b are the same, the directivity accuracy of the electric field distribution can be improved.
　結合部群１３ａ、１３ｂを介して供給されるマイクロ波の周波数が異なる場合、異なる周波数のマイクロ波で形成される複数の電界分布は互いに干渉しない。このため、表面波励振体上に形成される複数の電界分布の方向を変化させることにより、加熱領域における加熱の度合いを制御することができる。例えば、二つの電界分布を重ねると、加熱の度合いが強くなる。 When the frequencies of the microwaves supplied via the coupling unit groups 13a and 13b are different, the plurality of electric field distributions formed by the microwaves having different frequencies do not interfere with each other. For this reason, the degree of heating in the heating region can be controlled by changing the directions of the plurality of electric field distributions formed on the surface wave exciter. For example, when two electric field distributions are overlapped, the degree of heating increases.
　図６に示す例では、結合部群１３ａ、１３ｂは二つの結合部をそれぞれ含む。しかし、結合部群１３ａ、１３ｂが、三つ以上の結合部を含んでもよい。 In the example shown in FIG. 6, the coupling portion groups 13a and 13b include two coupling portions, respectively. However, the coupling part groups 13a and 13b may include three or more coupling parts.
　表面波励振体１０は、上側から見て四角形の形状を有する。しかし、複数の方向からマイクロ波が供給されれば、表面波励振体１０は、円形、楕円形または多角形など他の形状を有してもよい。 The surface wave exciter 10 has a rectangular shape when viewed from above. However, if microwaves are supplied from a plurality of directions, the surface wave exciter 10 may have another shape such as a circle, an ellipse, or a polygon.
　結合部群１３ａ、１３ｂは、表面波励振体１０の周囲に配置されていれば、表面波励振体１０の三つ以上の辺に亘って設けられてもよい。 The coupling portion groups 13 a and 13 b may be provided over three or more sides of the surface wave excitation body 10 as long as the coupling portion groups 13 a and 13 b are arranged around the surface wave excitation body 10.
　実施の形態１では、分配部１６が、生成部８により生成されたマイクロ波を分配する。しかし、複数の生成部を設け、分配部１６を省略してもよい。 In the first embodiment, the distribution unit 16 distributes the microwave generated by the generation unit 8. However, a plurality of generation units may be provided and the distribution unit 16 may be omitted.
　以下、高周波加熱装置１Ａの変形例について説明する。 Hereinafter, modified examples of the high-frequency heating device 1A will be described.
　［第１変形例］
　本実施の形態の第１変形例に係る高周波加熱装置１Ｂの基本構成は、図１に示す高周波加熱装置１Ａと同じである。 [First Modification]
The basic configuration of the high-frequency heating device 1B according to the first modification of the present embodiment is the same as that of the high-frequency heating device 1A shown in FIG.
　図７は、高周波加熱装置１Ｂの構成を模式的に示すブロック図である。図７に示すように、高周波加熱装置１Ｂは、給電ブロック３０Ａの代わりに給電ブロック３０Ｂを備える。給電ブロック３０Ｂは、生成部８と位相可変部１４ａ、１４ｂと制御部１５と分配部１６とを備える。 FIG. 7 is a block diagram schematically showing the configuration of the high-frequency heating device 1B. As shown in FIG. 7, the high-frequency heating device 1B includes a power feeding block 30B instead of the power feeding block 30A. The power supply block 30 </ b> B includes a generation unit 8, phase variable units 14 a and 14 b, a control unit 15, and a distribution unit 16.
　位相可変部１４ａは、分配部１６と結合部１２ａとの間に設けられる。位相可変部１４ｂは、分配部１６と結合部１２ｂとの間に設けられる。位相可変部１４ａ、１４ｂは、制御部１５の指示に応じて分配部１６からのマイクロ波の位相を変化させ、位相の変化したマイクロ波を結合部１２ａ、１２ｂにそれぞれ供給する。 The phase variable unit 14a is provided between the distribution unit 16 and the coupling unit 12a. The phase variable unit 14b is provided between the distribution unit 16 and the coupling unit 12b. The phase variable units 14a and 14b change the phase of the microwave from the distribution unit 16 in accordance with an instruction from the control unit 15, and supply the microwaves with the changed phase to the coupling units 12a and 12b, respectively.
　本変形例の高周波加熱装置１Ｂは、位相可変部１４ａ、１４ｂを用いて、二つのマイクロ波の間の位相差を制御するものであり、高周波加熱装置１Ａと同様の効果を奏するものである。 The high-frequency heating device 1B of this modification controls the phase difference between the two microwaves using the phase variable sections 14a and 14b, and has the same effect as the high-frequency heating device 1A.
　［第２変形例］
　本実施の形態の第２変形例に係る高周波加熱装置１Ｃの基本構成は、図１に示す高周波加熱装置１Ａと同じである。 [Second Modification]
The basic configuration of the high-frequency heating device 1C according to the second modification of the present embodiment is the same as the high-frequency heating device 1A shown in FIG.
　図８は、高周波加熱装置１Ｃの構成を模式的に示すブロック図である。図８に示すように、高周波加熱装置１Ｃは、給電ブロック３０Ａの代わりに給電ブロック３０Ｃを備える。給電ブロック３０Ｃは、生成部８ａ、８ｂと制御部１５とを備える。生成部８ａ、８ｂは、位相可変部を含むことで位相可変機能を有する。生成部８ａ、８ｂは、制御部１５の指示に応じて変化させた位相を有するマイクロ波を生成する。 FIG. 8 is a block diagram schematically showing the configuration of the high-frequency heating device 1C. As shown in FIG. 8, the high-frequency heating device 1C includes a power supply block 30C instead of the power supply block 30A. The power supply block 30 </ b> C includes generation units 8 a and 8 b and a control unit 15. The generation units 8a and 8b have a phase variable function by including a phase variable unit. The generation units 8a and 8b generate a microwave having a phase changed according to an instruction from the control unit 15.
　本変形例の高周波加熱装置１Ｃでは、位相が変化したマイクロ波が生成部８ａから結合部１２ａに供給され、位相が変化したマイクロ波が生成部８ｂから結合部１２ｂに供給される。高周波加熱装置１Ｃは、高周波加熱装置１Ａと同様の効果を奏するものである。 In the high-frequency heating device 1C of this modification, the microwave whose phase has changed is supplied from the generator 8a to the coupler 12a, and the microwave whose phase has changed is supplied from the generator 8b to the coupler 12b. The high-frequency heating device 1C has the same effect as the high-frequency heating device 1A.
　［第３変形例］
　本実施の形態の第３変形例に係る高周波加熱装置１Ｄの基本構成は、図１に示す高周波加熱装置１Ａとほぼ同じである。 [Third Modification]
The basic configuration of the high-frequency heating device 1D according to the third modification of the present embodiment is substantially the same as the high-frequency heating device 1A shown in FIG.
　図９は、高周波加熱装置１Ｄの構成を模式的に示すブロック図である。図９に示すように、高周波加熱装置１Ｄは、給電ブロック３０Ａの代わりに給電ブロック３０Ｄを備え、結合部１２ｃをさらに備える。給電ブロック３０Ｄは、生成部８と位相可変部１４ａ、１４ｂと制御部１５と分配部２６とを備える。 FIG. 9 is a block diagram schematically showing the configuration of the high-frequency heating device 1D. As illustrated in FIG. 9, the high-frequency heating device 1D includes a power supply block 30D instead of the power supply block 30A, and further includes a coupling portion 12c. The power supply block 30 </ b> D includes a generation unit 8, phase variable units 14 a and 14 b, a control unit 15, and a distribution unit 26.
　位相可変部１４ａは、分配部２６と結合部１２ａとの間に設けられる。位相可変部１４ｂは、分配部２６と結合部１２ｂとの間に設けられる。 The phase variable unit 14a is provided between the distribution unit 26 and the coupling unit 12a. The phase variable unit 14b is provided between the distribution unit 26 and the coupling unit 12b.
　本実施の形態では、分配部２６は、生成部８により生成されたマイクロ波を三つに分配し、結合部１２ｃと位相可変部１４ａ、１４ｂとに供給する。位相可変部１４ａは、マイクロ波の位相を変化させ、位相の変化したマイクロ波を結合部１２ａに供給する。位相可変部１４ｂは、マイクロ波の位相を変化させ、位相の変化したマイクロ波を結合部１２ｂに供給する。 In the present embodiment, the distribution unit 26 distributes the microwave generated by the generation unit 8 into three and supplies the microwave to the coupling unit 12c and the phase variable units 14a and 14b. The phase variable unit 14a changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12a. The phase variable unit 14b changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12b.
　本変形例によれば、結合部の数を増やすことで、高周波加熱装置１Ａと比べて、表面波励振体１０上に形成される電界分布の指向性を向上させることができる。 According to this modification, the directivity of the electric field distribution formed on the surface wave exciter 10 can be improved by increasing the number of coupling portions as compared with the high-frequency heating device 1A.
　［第４変形例］
　本実施の形態の第４変形例に係る高周波加熱装置１Ｅの基本構成は、図１に示す高周波加熱装置１Ａとほぼ同じである。 [Fourth Modification]
The basic configuration of the high-frequency heating device 1E according to the fourth modification of the present embodiment is substantially the same as that of the high-frequency heating device 1A shown in FIG.
　図１０は、高周波加熱装置１Ｅの構成を模式的に示すブロック図である。図１０に示すように、高周波加熱装置１Ｅは、給電ブロック３０Ａの代わりに給電ブロック３０Ｅを備え、結合部１２ｃをさらに備える。給電ブロック３０Ｅは、生成部８と位相可変部１４ａ、１４ｂ、１４ｃと制御部１５と分配部２６とを備える。 FIG. 10 is a block diagram schematically showing the configuration of the high-frequency heating device 1E. As shown in FIG. 10, the high-frequency heating device 1E includes a power feeding block 30E instead of the power feeding block 30A, and further includes a coupling portion 12c. The power supply block 30 </ b> E includes a generation unit 8, phase variable units 14 a, 14 b, 14 c, a control unit 15, and a distribution unit 26.
　位相可変部１４ａは、分配部２６と結合部１２ａとの間に設けられる。位相可変部１４ｂは、分配部２６と結合部１２ｂとの間に設けられる。位相可変部１４ｃは、分配部２６と結合部１２ｃとの間に設けられる。 The phase variable unit 14a is provided between the distribution unit 26 and the coupling unit 12a. The phase variable unit 14b is provided between the distribution unit 26 and the coupling unit 12b. The phase varying unit 14c is provided between the distributing unit 26 and the coupling unit 12c.
　本実施の形態では、分配部２６は、生成部８により生成されたマイクロ波を三つに分配し、位相可変部１４ａ～１４ｃに供給する。 In the present embodiment, the distribution unit 26 distributes the microwave generated by the generation unit 8 into three and supplies the microwaves to the phase variable units 14a to 14c.
　位相可変部１４ａは、マイクロ波の位相を変化させ、位相の変化したマイクロ波を結合部１２ａに供給する。位相可変部１４ｂは、マイクロ波の位相を変化させ、位相の変化したマイクロ波を結合部１２ｂに供給する。位相可変部１４ｃは、マイクロ波の位相を変化させ、位相の変化したマイクロ波を結合部１２ｃに供給する。 The phase variable unit 14a changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12a. The phase variable unit 14b changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12b. The phase variable unit 14c changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12c.
　本変形例によれば、結合部の数を増やすことで、高周波加熱装置１Ａと比べて、表面波励振体１０上に形成される電界分布の指向性を向上させることができる。 According to this modification, the directivity of the electric field distribution formed on the surface wave exciter 10 can be improved by increasing the number of coupling portions as compared with the high-frequency heating device 1A.
　図１１Ａ、図１１Ｂは、マイクロ波の分配の仕方の例を示す。図１１Ａに示す例では、分配部１６ａ、分配部１６ｂを用いてマイクロ波を三つに分配する。図１１Ｂに示す例では、分配部１６ａ～分配部１６ｃを用いてマイクロ波を四つに分配する。 FIG. 11A and FIG. 11B show examples of how to distribute microwaves. In the example shown in FIG. 11A, the microwaves are distributed into three using the distribution unit 16a and the distribution unit 16b. In the example shown in FIG. 11B, the microwaves are distributed into four parts using the distribution unit 16a to the distribution unit 16c.
　（実施の形態２）
　本開示の実施の形態２に係る高周波加熱装置１Ｆについて説明する。高周波加熱装置１Ｆの基本構成は、図１に示す高周波加熱装置１Ａとほぼ同じである。 (Embodiment 2)
A high-frequency heating device 1F according to the second embodiment of the present disclosure will be described. The basic configuration of the high-frequency heating device 1F is substantially the same as that of the high-frequency heating device 1A shown in FIG.
　図１２は、高周波加熱装置１Ｆの構成を模式的に示すブロック図である。図１２に示すように、高周波加熱装置１Ｆは、給電ブロック３０Ａの代わりに給電ブロック３０Ｆを備え、結合部１２ｃ、１２ｄをさらに備える。給電ブロック３０Ｆは、生成部８ｃ、８ｄと位相可変部１４ａ、１４ｂと制御部１５と分配部１６ａ、１６ｂとを備える。 FIG. 12 is a block diagram schematically showing the configuration of the high-frequency heating device 1F. As shown in FIG. 12, the high-frequency heating device 1F includes a power supply block 30F instead of the power supply block 30A, and further includes coupling portions 12c and 12d. The power supply block 30F includes generation units 8c and 8d, phase variable units 14a and 14b, a control unit 15, and distribution units 16a and 16b.
　結合部１２ａ、１２ｂは第１結合部群である結合部群１３ａを構成し、結合部１２ｃ、１２ｄは第２結合部群である結合部群１３ｂを構成する。生成部８ｃ、８ｄは、第１生成部、第２生成部にそれぞれ相当する。 The coupling portions 12a and 12b constitute a coupling portion group 13a that is a first coupling portion group, and the coupling portions 12c and 12d constitute a coupling portion group 13b that is a second coupling portion group. The generation units 8c and 8d correspond to a first generation unit and a second generation unit, respectively.
　生成部８ｃはマイクロ波を生成する。分配部１６ａは、生成部８ｃにより生成されたマイクロ波を二つに分配する。分配された二つのマイクロ波のうちの一方は結合部１２ｂに供給され、他方は位相可変部１４ａに供給される。位相可変部１４ａは、マイクロ波の位相を変化させ、位相の変化したマイクロ波を結合部１２ａに供給する。 The generation unit 8c generates a microwave. The distribution unit 16a distributes the microwave generated by the generation unit 8c in two. One of the two distributed microwaves is supplied to the coupling unit 12b, and the other is supplied to the phase variable unit 14a. The phase variable unit 14a changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12a.
　位相差を有する二つのマイクロ波が、結合部１２ａ、１２ｂを介して表面波励振体１０に供給されると、表面波励振体１０上に指向性を有する電界分布２１が形成される。電界分布２１の向きは、二つのマイクロ波の間の位相差制御により制御可能である。 When two microwaves having a phase difference are supplied to the surface wave exciter 10 via the coupling portions 12a and 12b, an electric field distribution 21 having directivity is formed on the surface wave exciter 10. The direction of the electric field distribution 21 can be controlled by phase difference control between the two microwaves.
　生成部８ｄは、生成部８ｃにより生成されるマイクロ波と異なる周波数のマイクロ波を生成する。分配部１６ｂは、生成部８ｄにより生成されたマイクロ波を二つに分配する。分配された二つのマイクロ波のうちの一方は結合部１２ｄに供給され、他方は位相可変部１４ｂに供給される。位相可変部１４ｂは、マイクロ波の位相を変化させ、位相の変化したマイクロ波を結合部１２ｃに供給する。 The generating unit 8d generates a microwave having a frequency different from that of the microwave generated by the generating unit 8c. The distribution unit 16b distributes the microwave generated by the generation unit 8d in two. One of the two distributed microwaves is supplied to the coupling unit 12d, and the other is supplied to the phase variable unit 14b. The phase variable unit 14b changes the phase of the microwave and supplies the microwave with the changed phase to the coupling unit 12c.
　位相差を有する二つのマイクロ波が、結合部１２ｃ、１２ｄを介して表面波励振体１０に供給されると、表面波励振体１０上に指向性を有する電界分布２２が形成される。電界分布２２の向きは、二つのマイクロ波の間の位相差制御により制御可能である。 When two microwaves having a phase difference are supplied to the surface wave exciter 10 via the coupling portions 12c and 12d, an electric field distribution 22 having directivity is formed on the surface wave exciter 10. The direction of the electric field distribution 22 can be controlled by phase difference control between the two microwaves.
　電界分布２１、２２は、互いに異なる周波数のマイクロ波により形成される。電界分布２１、２２は互いに干渉せず、それらの指向性は独立して制御可能である。 The electric field distributions 21 and 22 are formed by microwaves having different frequencies. The electric field distributions 21 and 22 do not interfere with each other, and their directivities can be controlled independently.
　例えば、電界分布２１、２２が交差するように二つのマイクロ波の間の位相差を制御することで、電界分布２１、２２が重なる領域１９を形成することができる。領域１９では電界が強まるため、領域１９に載置された加熱対象物を集中的に加熱することができる。 For example, by controlling the phase difference between the two microwaves so that the electric field distributions 21 and 22 intersect, the region 19 where the electric field distributions 21 and 22 overlap can be formed. Since the electric field is strengthened in the region 19, the heating object placed in the region 19 can be heated intensively.
　（実施の形態３）
　本開示の実施の形態３に係る高周波加熱装置１Ｇについて説明する。高周波加熱装置１Ｇの基本構成は、図１に示す高周波加熱装置１Ａとほぼ同じである。 (Embodiment 3)
A high-frequency heating device 1G according to the third embodiment of the present disclosure will be described. The basic configuration of the high-frequency heating device 1G is substantially the same as the high-frequency heating device 1A shown in FIG.
　図１３は、高周波加熱装置１Ｇの構成を模式的に示すブロック図である。図１３に示すように、高周波加熱装置１Ｇは、給電ブロック３０Ａの代わりに給電ブロック３０Ｇを備える。給電ブロック３０Ｇは、生成部８ｃ、８ｄと位相可変部１４ａ、１４ｂと制御部１５と分配部１６ａ、１６ｂと合成部１７ａ、１７ｂとを備える。 FIG. 13 is a block diagram schematically showing the configuration of the high-frequency heating device 1G. As illustrated in FIG. 13, the high-frequency heating device 1G includes a power feeding block 30G instead of the power feeding block 30A. The power supply block 30G includes generation units 8c and 8d, phase variable units 14a and 14b, a control unit 15, distribution units 16a and 16b, and synthesis units 17a and 17b.
　合成部１７ａ、１７ｂは、供給された二つのマイクロ波が同一の周波数を有する場合、それらのベクトル和を出力し、供給された二つのマイクロ波が互いに異なる周波数を有する場合、それらの和を出力する。合成部１７ａ、１７ｂには、ウィルキンソンカプラ（Wilkinson coupler）、ハイブリッドカプラなどが適用可能である。 The synthesizers 17a and 17b output vector sums when the two supplied microwaves have the same frequency, and output the sum when the two supplied microwaves have different frequencies. To do. A Wilkinson coupler, a hybrid coupler, or the like can be applied to the combining units 17a and 17b.
　分配部１６ａは、生成部８ｃにより生成されたマイクロ波を二つに分配する。分配された二つのマイクロ波のうちの一方は合成部１７ｂに供給され、他方は位相可変部１４ａに供給される。位相可変部１４ａは、マイクロ波の位相を変化させ、位相の変化したマイクロ波を合成部１７ａに供給する。 The distributing unit 16a distributes the microwave generated by the generating unit 8c in two. One of the two distributed microwaves is supplied to the combining unit 17b, and the other is supplied to the phase variable unit 14a. The phase variable unit 14a changes the phase of the microwave and supplies the microwave with the changed phase to the combining unit 17a.
　分配部１６ｂは、生成部８ｄにより生成されたマイクロ波を二つに分配する。分配された二つのマイクロ波のうちの一方は合成部１７ｂに供給され、他方は位相可変部１４ｂに供給される。位相可変部１４ｂは、マイクロ波の位相を変化させ、位相の変化したマイクロ波を合成部１７ａに供給する。 The distributing unit 16b distributes the microwave generated by the generating unit 8d in two. One of the two distributed microwaves is supplied to the synthesis unit 17b, and the other is supplied to the phase variable unit 14b. The phase variable unit 14b changes the phase of the microwave and supplies the microwave with the changed phase to the combining unit 17a.
　合成部１７ａは、異なる周波数の二つのマイクロ波を合成し、合成されたマイクロ波を結合部１２ａに供給する。表面波励振体１０には、結合部１２ａを介して二つの周波数成分を有するマイクロ波が供給される。 The synthesizing unit 17a synthesizes two microwaves having different frequencies and supplies the synthesized microwaves to the coupling unit 12a. The surface wave exciter 10 is supplied with microwaves having two frequency components via the coupling portion 12a.
　合成部１７ｂは、位相が変化した異なる周波数の二つのマイクロ波を合成し、合成されたマイクロ波を結合部１２ｂに供給する。表面波励振体１０には、結合部１２ｂを介して二つの周波数成分を有するマイクロ波が供給される。 The synthesizing unit 17b synthesizes two microwaves having different frequencies whose phases are changed, and supplies the synthesized microwaves to the coupling unit 12b. The surface wave exciter 10 is supplied with microwaves having two frequency components via the coupling portion 12b.
　このようにして、表面波励振体１０上に電界分布２３と電界分布２４とが形成される。電界分布２３、２４の向きは、位相可変部１４ａ、１４ｂによる位相差制御により制御可能である。 In this way, the electric field distribution 23 and the electric field distribution 24 are formed on the surface wave exciter 10. The directions of the electric field distributions 23 and 24 can be controlled by phase difference control by the phase variable units 14a and 14b.
　電界分布２３、２４は、互いに異なる周波数のマイクロ波により形成される。電界分布２３、２４は互いに干渉せず、それらの指向性は独立して制御可能である。 The electric field distributions 23 and 24 are formed by microwaves having different frequencies. The electric field distributions 23 and 24 do not interfere with each other, and their directivities can be controlled independently.
　電界分布２３、２４が交差するように二つのマイクロ波の間の位相差を制御すると、電界分布２３、２４の重なる領域では、加熱対象物を集中的に加熱することができる。 If the phase difference between the two microwaves is controlled so that the electric field distributions 23 and 24 intersect, the heating object can be heated intensively in the region where the electric field distributions 23 and 24 overlap.
　本開示は、電子レンジ、乾燥装置、陶芸用加熱装置、生ゴミ処理機、半導体製造装置などに適用可能である。 The present disclosure can be applied to a microwave oven, a drying apparatus, a ceramic heating apparatus, a garbage disposal machine, a semiconductor manufacturing apparatus, and the like.
　１Ａ，１Ｂ，１Ｃ，１Ｄ，１Ｅ，１Ｆ，１Ｇ　高周波加熱装置
　４　載置台
　６　加熱対象物
　８，８ａ，８ｂ，８ｃ，８ｄ　生成部
　１０，１０ａ，１０ｂ　表面波励振体
　１２ａ，１２ｂ，１２ｃ，１２ｄ　結合部
　１３ａ，１３ｂ　結合部群
　１４，１４ａ，１４ｂ，１４ｃ　位相可変部
　１５　制御部
　１６，１６ａ，１６ｂ，１６ｃ，２６　分配部
　１７ａ，１７ｂ　合成部
　１９　領域
　２０，２１，２２，２３，２４　電界分布
　３０Ａ，３０Ｂ，３０Ｃ，３０Ｄ，３０Ｅ，３０Ｆ，３０Ｇ　給電ブロック 1A, 1B, 1C, 1D, 1E, 1F, 1G High-frequency heating device 4 Mounting table 6 Heating object 8, 8a, 8b, 8c, 8d Generation unit 10, 10a, 10b Surface wave exciter 12a, 12b, 12c, 12d Coupling unit 13a, 13b Coupling unit group 14, 14a, 14b, 14c Phase variable unit 15 Control unit 16, 16a, 16b, 16c, 26 Distribution unit 17a, 17b Combining unit 19 Area 20, 21, 22, 23, 24 Electric field distribution 30A, 30B, 30C, 30D, 30E, 30F, 30G

Claims (8)

  1. 　マイクロ波を生成するように構成された生成部と、
    　周期構造体を有し、前記マイクロ波を表面波モードで伝播させて加熱対象物を加熱するように構成された表面波励振体と、
    　前記表面波励振体の端部に設けられ、前記マイクロ波を前記表面波励振体に供給するように構成された複数の結合部と、
    　前記複数の結合部を介して前記表面波励振体に供給されるための複数のマイクロ波の間の位相差を変化させるように構成された位相可変部と、を備えた高周波加熱装置。     A generator configured to generate a microwave;
    A surface wave exciter having a periodic structure and configured to heat the object to be heated by propagating the microwave in a surface wave mode;
    A plurality of coupling portions provided at an end of the surface wave excitation body and configured to supply the microwave to the surface wave excitation body;
    A high-frequency heating apparatus comprising: a phase variable unit configured to change a phase difference between a plurality of microwaves to be supplied to the surface wave exciter through the plurality of coupling units.
  2. 　前記複数の結合部のうちの少なくとも二つの結合部を介して、前記複数のマイクロ波が前記表面波励振体に同一方向に供給される請求項１に記載の高周波加熱装置。 The high frequency heating device according to claim 1, wherein the plurality of microwaves are supplied to the surface wave exciter in the same direction via at least two of the plurality of coupling portions.
  3. 　前記複数の結合部が、前記生成部により生成された前記マイクロ波の波長の１／４以上の間隔で配置された請求項２に記載の高周波加熱装置。 The high-frequency heating device according to claim 2, wherein the plurality of coupling portions are arranged at intervals of ¼ or more of the wavelength of the microwave generated by the generation portion.
  4. 　前記少なくとも二つの結合部と、前記複数の結合部のうちの前記少なくとも二つの結合部とは異なる少なくとも二つの結合部とを介して、前記複数のマイクロ波が前記表面波励振体に互いに異なる方向に供給される請求項２に記載の高周波加熱装置。 Through the at least two coupling portions and at least two coupling portions different from the at least two coupling portions of the plurality of coupling portions, the plurality of microwaves are different from each other in the surface wave exciter. The high-frequency heating device according to claim 2, wherein the high-frequency heating device is supplied.
  5. 　前記生成部により生成された前記マイクロ波を分配するように構成された分配部をさらに備え、
    　前記位相可変部が、前記分配部と前記生成部との間に設けられた請求項１に記載の高周波加熱装置。     A distribution unit configured to distribute the microwave generated by the generation unit;
    The high-frequency heating device according to claim 1, wherein the phase variable unit is provided between the distribution unit and the generation unit.
  6. 　前記生成部が、位相可変機能を有するように構成された請求項１に記載の高周波加熱装置。 The high-frequency heating device according to claim 1, wherein the generation unit is configured to have a phase variable function.
  7. 　前記生成部が、第１生成部と第２生成部とを含み、
    　前記第２生成部が、前記第１生成部により生成されたマイクロ波と異なる周波数のマイクロ波を生成し、
    　前記第１生成部および前記第２生成部により生成された前記複数のマイクロ波が、前記複数の結合部のうちの少なくとも二つの結合部を介して前記表面波励振体に供給されるように構成された請求項１に記載の高周波加熱装置。     The generation unit includes a first generation unit and a second generation unit,
    The second generator generates a microwave having a frequency different from the microwave generated by the first generator;
    The plurality of microwaves generated by the first generation unit and the second generation unit are supplied to the surface wave exciter through at least two coupling units of the plurality of coupling units. The high-frequency heating device according to claim 1.
  8. 　前記第１生成部により生成された前記マイクロ波と前記第２生成部により生成された前記マイクロ波とを合成し、合成されたマイクロ波を前記結合部に供給する合成部をさらに備えた請求項７に記載の高周波加熱装置。 The synthesis unit further comprising: a synthesis unit configured to synthesize the microwave generated by the first generation unit and the microwave generated by the second generation unit and supply the synthesized microwave to the coupling unit. The high-frequency heating device according to 7.
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CN111372343A (en) * 2018-12-26 2020-07-03 财团法人工业技术研究院 Distributed microwave phase control method

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WO2019187457A1 (en) * 2018-03-26 2019-10-03 パナソニックＩｐマネジメント株式会社 Microwave heating device
CN111052861A (en) * 2018-03-26 2020-04-21 松下知识产权经营株式会社 Microwave heating device
JPWO2019187457A1 (en) * 2018-03-26 2021-03-11 パナソニックＩｐマネジメント株式会社 Microwave heating device
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CN111372343A (en) * 2018-12-26 2020-07-03 财团法人工业技术研究院 Distributed microwave phase control method

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