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WO2018000491A1 - 黑色矩阵光罩、制备黑色矩阵的方法及其应用 - Google Patents

黑色矩阵光罩、制备黑色矩阵的方法及其应用 Download PDF

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Publication number
WO2018000491A1
WO2018000491A1 PCT/CN2016/091812 CN2016091812W WO2018000491A1 WO 2018000491 A1 WO2018000491 A1 WO 2018000491A1 CN 2016091812 W CN2016091812 W CN 2016091812W WO 2018000491 A1 WO2018000491 A1 WO 2018000491A1
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WIPO (PCT)
Prior art keywords
black matrix
preparing
material layer
liquid crystal
crystal display
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PCT/CN2016/091812
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English (en)
French (fr)
Inventor
沈嘉文
贾迎宾
孙浩然
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武汉华星光电技术有限公司
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Priority to US15/119,722 priority Critical patent/US10324325B2/en
Publication of WO2018000491A1 publication Critical patent/WO2018000491A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to a black matrix mask, a method for preparing a black matrix, and an application thereof.
  • LTPS Low Temperature Poly-Silicon
  • the LTPS panel uses high mobility low temperature polysilicon to fabricate thin film transistors.
  • This panel has the advantages of high resolution, low power consumption, high response speed, high aperture ratio, etc., and is expected to become the next-generation mainstream small and medium size display panel.
  • FIG. 1A it is a schematic diagram of a taper angle of a conventional black matrix.
  • the black matrix 11 is formed on the first substrate 10 and disposed between the first substrate 10 and the second substrate 20, and the light emitted by the backlight source passes through the second substrate.
  • the black matrix 11 has a line width of 5 ⁇ m and a taper angle angle of A ⁇ 90 degrees.
  • Figure 1B which is a schematic view of the cone angle of an ideal black matrix. Under the condition that the line width is also 5 micrometers, the cone angle angle A of the black matrix 12 between the first substrate 10 and the second substrate 20 in an ideal state can be >90 degrees, and the larger the angle, the aperture ratio is increased, and the wearing ratio is increased. The higher the penetration rate.
  • FIG. 2A is a schematic diagram of a conventional black matrix fabrication process
  • FIG. 2B is a reticle pattern used in a conventional black matrix fabrication process
  • FIG. 2C is a reticle used in a conventional black matrix fabrication process.
  • Figure 2D shows the existing black matrix that was completed.
  • the existing black matrix fabrication process primarily involves exposure, development, and baking, during which the black matrix material layer 30 is constantly changing, ultimately forming a black matrix 31 on the substrate 32. First, the black matrix material layer 30 is exposed using a mask 33 shown in FIG.
  • the mask 33 has a mask pattern 34 on which a chain is formed on the surface of the black matrix material layer 30 ( Crosslink); next, the exposed black matrix material layer 30 is developed, and the underlayer of the black matrix material layer 30 is eaten by the developer to form an undercut, at which time the taper angle is long; therefore, the black matrix is next Material
  • the black matrix material layer 30 is easily thermally flowed, and the taper angle is smoothed in the direction of the arrow, and finally the black matrix 31 is formed on the substrate 32.
  • Such a black matrix 31 formed in the conventional manner that is, having the aforementioned taper angle, is difficult to break through >90 degrees, which is disadvantageous for increasing the aperture ratio.
  • the present invention provides a black matrix mask in which an edge of a black matrix pattern on the black matrix mask is coated with a light shielding layer having a specific transmittance.
  • the present invention also provides a method for preparing a black matrix by applying the above black matrix mask, comprising:
  • Step 100 Exposing a black matrix material layer on the substrate by using the black matrix mask
  • Step 200 developing the exposed black matrix material layer
  • Step 300 baking the developed black matrix material layer to form a black matrix on the substrate.
  • the black matrix cone angle is greater than 90 degrees.
  • the black matrix has a line width of 5 micrometers.
  • step 200 the exposed black matrix material layer is wet etched using a developing solution.
  • the angle of the black matrix cone angle is controlled by setting the transmittance of the light shielding layer.
  • the present invention also provides a method of preparing a color filter, wherein the black matrix of the color filter is prepared according to the above method.
  • the present invention also provides a method for preparing an array substrate, wherein the black matrix of the array substrate is prepared according to the above method.
  • the present invention also provides a method for preparing a liquid crystal display device.
  • the black matrix of the liquid crystal display device was prepared in accordance with the above method.
  • the liquid crystal display device is an LTPS liquid crystal display device.
  • the black matrix mask of the present invention and the method of preparing the black matrix, the color filter, the array substrate, and the liquid crystal display device can increase the black matrix taper angle and contribute to the improvement of the product aperture ratio.
  • 1A is a schematic view of a taper angle of a conventional black matrix
  • Figure 1B is a schematic view of a cone angle of an ideal black matrix
  • 2A is a schematic view showing a process of fabricating a conventional black matrix
  • 2B is a reticle pattern used in a conventional black matrix fabrication process
  • 2C is a photomask used in the existing black matrix fabrication process
  • Figure 2D shows the existing black matrix that is completed
  • 3A is a schematic view showing a process of fabricating a black matrix according to a preferred embodiment of the method for fabricating a black matrix of the present invention
  • 3B is a reticle pattern of a preferred embodiment of a black matrix mask of the present invention.
  • 3C is a schematic view of a preferred embodiment of a black matrix mask of the present invention.
  • 3D is a black matrix fabricated by applying a preferred embodiment of the black matrix mask of the present invention.
  • FIG. 4 is a flow chart of a method of preparing a black matrix of the present invention.
  • FIG. 4 there is shown a flow chart of a method of making a black matrix of the present invention.
  • the method mainly includes:
  • Step 100 Exposing a black matrix material layer on the substrate by using the black matrix mask provided by the present invention.
  • Step 200 developing the exposed black matrix material layer
  • Step 300 baking the developed black matrix material layer to form a black matrix on the substrate.
  • FIG. 3A is a schematic diagram of a black matrix fabrication process
  • FIG. 3B is a photomask pattern of a preferred embodiment of the black matrix mask of the present invention.
  • FIG. A schematic diagram of a preferred embodiment of the inventive black matrix reticle, FIG. 3D is The finished black matrix is fabricated using the present invention.
  • the black matrix material layer 40 is exposed using the mask 43 shown in FIG. 3C.
  • a chain is formed on the surface of the black matrix material layer 40, and the mask 43 has the mask pattern 44 shown in FIG. 3B (solid color).
  • the edge of the reticle pattern 44 is coated with a light-shielding layer 45 (cross-line filling portion) for controlling the transmittance, that is, the light-shielding layer 45 at the edge is a halftone design, and the black matrix material layer is
  • the portion corresponding to the light-shielding layer 45 is exposed by the exposure machine, the structure becomes loose, that is, the edge chain is insufficient, and the development is not resistant to development, which makes the taper angle high.
  • the structures produced on the black matrix material layer 40 after the mask pattern 44 and the light shielding layer 45 are exposed by the exposure machine are respectively represented by solid color filling portions and cross line filling portions.
  • the exposed black matrix material layer 40 is developed, and the portion of the black matrix material layer 40 corresponding to the Halftone is developed and washed away, and the taper angle is shortened. At this time, the black matrix material layer 40 has a narrow line width. Since the developer does not completely react with the loose portion of the structure in the black matrix material layer 40, when the black matrix material layer 40 is subsequently post-baked, the black matrix material layer 40 has a poor heat flow, and the black matrix material layer 40 is partially melted.
  • the bottom line width of the black matrix material layer 40 is widened to just reach the preset line width, and finally a black matrix 41 is formed on the substrate 42.
  • the black matrix 41 processed in this manner can strictly control the line width without reducing the aperture ratio.
  • the edge corresponding to the Halftone reserves the shape variable when the black matrix is baked, so that the processed black matrix line width is guaranteed without affecting the aperture ratio.
  • the black matrix mask of the present invention can be used to prepare black matrices, as well as corresponding color filters, array substrates, liquid crystal display devices, and the like.
  • the invention further uses the Halfton design on the edge of the black matrix pattern of the existing black matrix mask, and controls the black matrix cone angle with different transmittance design, and it is desirable to achieve a high black matrix cone angle (>90 degrees). ).
  • the existing LTPS products for the development of high-resolution products will result in a decrease in the overall penetration rate of the products, and the use of the present invention to increase the product penetration rate and increase the black matrix taper angle will effectively contribute to the improvement of the product aperture ratio.
  • the black matrix mask of the present invention and the method of preparing the black matrix, the color filter, the array substrate, and the liquid crystal display device can increase the black matrix taper angle and contribute to the improvement of the product aperture ratio.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
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  • Liquid Crystal (AREA)
  • Optical Filters (AREA)

Abstract

一种黑色矩阵光罩（43）、制备黑色矩阵（41）的方法及其应用。该黑色矩阵光罩（43）沿所述黑色矩阵光罩（43）上的黑色矩阵图案（44）的边缘涂有具有特定穿透率的遮光层（45）。还提供了制备黑色矩阵（41）、彩色滤光片、阵列基板、液晶显示装置的方法。该制备黑色矩阵（41）的方法包括：步骤100、使用所述黑色矩阵光罩（43）对基板（42）上的黑色矩阵材料层（40）进行曝光（100）；步骤200、对曝光后的黑色矩阵材料层（40）进行显影（200）；步骤300、对显影后的黑色矩阵材料层（40）进行烘烤，最终在所述基板（42）上形成黑色矩阵（41）（300）。黑色矩阵光罩（43）以及制备黑色矩阵（41）、彩色滤光片、阵列基板、液晶显示装置的方法，能够使得黑色矩阵（41）锥角变高，有助于提升产品开口率。

Description

黑色矩阵光罩、制备黑色矩阵的方法及其应用 技术领域
本发明涉及液晶显示技术领域，尤其涉及一种黑色矩阵光罩、制备黑色矩阵的方法及其应用。
背景技术
近年来，LTPS(Low Temperature Poly-Silicon，即低温多晶硅)面板在高端手机、平板电脑上获得了广泛应用。LTPS面板采用高迁移率的低温多晶硅来制作薄膜晶体管。这种面板具有高分辨率、低功耗、高反应速度、高开口率等优点，有望成为下一代主流的中小尺寸显示面板。
随着LTPS产品追求更高的PPI(每英寸像素数)的趋势，彩色滤光片(Color Filter)的黑色矩阵(BM)的线宽不断的缩小。随着黑色矩阵线宽缩小，黑色矩阵的锥角(Taper)角度需要更趋近于90度，以免因提高了PPI而减小了开口率，但现行黑色矩阵材料受限于为具有更佳的制程性，锥角很难突破>90度。参见图1A，其为现有黑色矩阵的锥角示意图。作为完整的液晶面板或彩色滤光片结构的一部分，黑色矩阵11形成于第一基板10上，并且设置于第一基板10和第二基板20之间，背光光源所发出光线透过第二基板20并朝第一基板10发射，黑色矩阵11线宽为5微米，其锥角角度A<90度。黑色矩阵11的锥角角度A越小，越容易遮光，开口率也越小，穿透率也越低。参见图1B，其为理想的黑色矩阵的锥角示意图。在同样为线宽5微米的条件下，理想状态下的第一基板10和第二基板20之间的黑色矩阵12的锥角角度A能够>90度，角度越大，开口率增大，穿透率越高。
参见图2A至图2D，图2A为现有黑色矩阵制作过程的示意图，图2B为现有黑色矩阵制作过程所使用的光罩图案，图2C为现有黑色矩阵制作过程所使用的光罩，图2D为制作完成的现有黑色矩阵。现有黑色矩阵制作过程主要包括曝光，显影，及烘烤，在此过程中黑色矩阵材料层30不断变化，最终形成基板32上的黑色矩阵31。首先使用图2C所示的光罩(Mask)33对黑色矩阵材料层30进行曝光，光罩33上具有光罩图案(Mask Pattern)34，此时在黑色矩阵材料层30表面会产生链结(crosslink)；接下来对曝光后的黑色矩阵材料层30进行显影，利用显影液吃下黑色矩阵材料层30的底层形成底切(undercut)，此时锥角屋檐较长；因此接下来对黑色矩阵材 料层30进行后烘烤(Post bake)时，黑色矩阵材料层30容易热流动(thermal flow)，沿箭头方向使得锥角平滑(taper smooth)，最终在基板32上形成黑色矩阵31。这种按照现有方式形成的黑色矩阵31，即具有前述锥角很难突破>90度的缺陷，不利于提高开口率。
发明内容
因此，本发明的目的在于提供一种黑色矩阵光罩，增大制得的黑色矩阵的锥角。
本发明的又一目的在于提供一种制备黑色矩阵的方法，应用上述黑色矩阵光罩增大黑色矩阵的锥角。
本发明的又一目的在于提供一种彩色滤光片的制备方法，其应用上述制备黑色矩阵的方法以增大黑色矩阵的锥角。
本发明的又一目的在于提供一种阵列基板的制备方法，其应用上述制备黑色矩阵的方法以增大黑色矩阵的锥角。
本发明的又一目的在于提供一种液晶显示装置的制备方法，其应用上述制备黑色矩阵的方法以增大黑色矩阵的锥角。
为实现上述目的，本发明提供了一种黑色矩阵光罩，其中，沿所述黑色矩阵光罩上的黑色矩阵图案的边缘涂有具有特定穿透率的遮光层。
为实现上述目的，本发明还提供了一种应用上述黑色矩阵光罩制备黑色矩阵的方法，包括：
步骤100、使用所述黑色矩阵光罩对基板上的黑色矩阵材料层进行曝光；
步骤200、对曝光后的黑色矩阵材料层进行显影；
步骤300、对显影后的黑色矩阵材料层进行烘烤，最终在所述基板上形成黑色矩阵。
其中，所述黑色矩阵锥角大于90度。
其中，所述黑色矩阵的线宽为5微米。
其中，步骤200中使用显影液对曝光后的黑色矩阵材料层进行湿蚀刻。
其中，通过设定所述遮光层的穿透率来控制黑色矩阵锥角的角度。
为实现上述目的，本发明还提供了一种彩色滤光片的制备方法，所述彩色滤光片的黑色矩阵按照上述方法进行制备。
为实现上述目的，本发明还提供了一种阵列基板的制备方法，所述阵列基板的黑色矩阵按照上述方法进行制备。
为实现上述目的，本发明还提供了一种液晶显示装置的制备方法，所 述液晶显示装置的黑色矩阵按照上述方法进行制备。
其中，所述液晶显示装置为LTPS液晶显示装置。
综上所述，本发明的黑色矩阵光罩以及制备黑色矩阵、彩色滤光片、阵列基板、液晶显示装置的方法，能够使得黑色矩阵锥角变高，有助于提升产品开口率。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1A为现有黑色矩阵的锥角示意图；
图1B为理想的黑色矩阵的锥角示意图；
图2A为现有黑色矩阵制作过程的示意图；
图2B为现有黑色矩阵制作过程所使用的光罩图案；
图2C为现有黑色矩阵制作过程所使用的光罩；
图2D为制作完成的现有黑色矩阵；
图3A为本发明制备黑色矩阵的方法一较佳实施例的黑色矩阵制作过程示意图；
图3B为本发明黑色矩阵光罩一较佳实施例的光罩图案；
图3C为本发明黑色矩阵光罩的一较佳实施例的示意图；
图3D为应用本发明黑色矩阵光罩的一较佳实施例制作完成的黑色矩阵；
图4为本发明制备黑色矩阵的方法的流程图。
具体实施方式
参见图4，其为本发明制备黑色矩阵的方法的流程图。该方法主要包括：
步骤100、使用本发明所提供的黑色矩阵光罩对基板上的黑色矩阵材料层进行曝光；
步骤200、对曝光后的黑色矩阵材料层进行显影；
步骤300、对显影后的黑色矩阵材料层进行烘烤，最终在所述基板上形成黑色矩阵。
下面结合图3A至图3D来详细说明本发明制备黑色矩阵的过程，图3A为黑色矩阵制作过程示意图，图3B为本发明黑色矩阵光罩一较佳实施例的光罩图案，图3C为本发明黑色矩阵光罩的一较佳实施例示意图，图3D为 应用本发明制作完成的黑色矩阵。本领域技术人员可以理解，熟知的如基板清洁，黑色矩阵材料涂布等步骤在此不再赘述。
首先使用图3C所示的光罩43对黑色矩阵材料层40进行曝光，此时在黑色矩阵材料层40表面会产生链结，光罩43上具有图3B所示的光罩图案44(实色填充部分)，光罩图案44边缘涂上一层可控制穿透率的遮光层45(交叉线填充部分)，也就是说边缘的遮光层45为半色调(Halftone)设计，将黑色矩阵材料层40对应遮光层45的部分经曝光机曝光后结构将变为松散，也就是边缘链结不足，具有显影时不耐显影的特性，将使得锥角变高。光罩图案44和遮光层45经曝光机曝光后在黑色矩阵材料层40上产生的结构分别以实色填充部分和交叉线填充部分对应表示。接下来对曝光后的黑色矩阵材料层40进行显影，Halftone对应的黑色矩阵材料层40部分为显影洗掉，锥角屋檐缩短，此时黑色矩阵材料层40线宽变窄。由于显影液与黑色矩阵材料层40中的结构松散部分反应不完全，因此接下来对黑色矩阵材料层40进行后烘烤时，黑色矩阵材料层40热流动差，黑色矩阵材料层40部分融化而沿箭头方向流至底部，使黑色矩阵材料层40底部线宽变宽至刚好达到预设线宽，最终在基板42上形成黑色矩阵41。显然，该种方式加工出的黑色矩阵41可以严格控制线宽，不会缩小开口率。本发明采用边缘Halftone的设计形成黑色矩阵时，Halftone对应的边缘预留了黑色矩阵烘烤时的形变量，使加工后的黑色矩阵线宽得到保障，不会影响开口率。
本发明的黑色矩阵光罩可以用于制备黑色矩阵，以及相应的彩色滤光片、阵列基板、液晶显示装置等。本发明在现有的黑色矩阵光罩的黑色矩阵图案的边缘进一步使用Halfton设计，以不同的透光率设计来控制黑色矩阵锥角角度，期望达成黑色矩阵锥角较高的结果(>90度)。现有LTPS产品为发展高解析度产品，将造成产品整体穿透率的下降，而使用本发明提升产品穿透率将黑色矩阵锥角提高则将有效帮助产品开口率的提升。
综上所述，本发明的黑色矩阵光罩以及制备黑色矩阵、彩色滤光片、阵列基板、液晶显示装置的方法，能够使得黑色矩阵锥角变高，有助于提升产品开口率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

  1. 一种黑色矩阵光罩，沿所述黑色矩阵光罩上的黑色矩阵图案的边缘涂有具有特定穿透率的遮光层。
  2. 一种应用如权利要求1所述的黑色矩阵光罩制备黑色矩阵的方法，包括：
    步骤100、使用所述黑色矩阵光罩对基板上的黑色矩阵材料层进行曝光；
    步骤200、对曝光后的黑色矩阵材料层进行显影；
    步骤300、对显影后的黑色矩阵材料层进行烘烤，最终在所述基板上形成黑色矩阵。
  3. 如权利要求2所述的制备黑色矩阵的方法，其中，所述黑色矩阵锥角大于90度。
  4. 如权利要求2所述的制备黑色矩阵的方法，其中，所述黑色矩阵的线宽为5微米。
  5. 如权利要求2所述的制备黑色矩阵的方法，其中，步骤200中使用显影液对曝光后的黑色矩阵材料层进行湿蚀刻。
  6. 如权利要求2所述的制备黑色矩阵的方法，其中，通过设定所述遮光层的穿透率来控制黑色矩阵锥角的角度。
  7. 一种彩色滤光片的制备方法，所述彩色滤光片的黑色矩阵按照权利要求2所述的方法进行制备。
  8. 一种阵列基板的制备方法，所述阵列基板的黑色矩阵按照权利要求2所述的方法进行制备。
  9. 一种液晶显示装置的制备方法，所述液晶显示装置的黑色矩阵按照权利要求2所述的方法进行制备。
  10. 如权利要求9所述的液晶显示装置的制备方法，其中，所述液晶显示装置为LTPS液晶显示装置。
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