WO2017114236A1

WO2017114236A1 - Charging method and device, and solid state disk

Info

Publication number: WO2017114236A1
Application number: PCT/CN2016/111090
Authority: WO
Inventors: 唐勇军
Original assignee: 华为技术有限公司
Priority date: 2015-12-30
Filing date: 2016-12-20
Publication date: 2017-07-06
Also published as: CN105677241A

Abstract

A charging method, a charging device, and an SSD. The charging method is applied to the solid state disk. The solid state disk comprises a standby-electricity capacitor (201) and a volatile memory. The charging method comprises: detecting the data storage capacity of a volatile memory (302), the data storage capacity of the volatile memory being divided into multiple sections in advance, and each section corresponding to a charging voltage; determining a section where the detected data storage capacity of the volatile memory exists (303); and charging the standby-electricity capacitor by using a charging voltage corresponding to the data storage capacity of the volatile memory (303).In the method, the standby-electricity quantity of the standby-electricity capacitor is dynamically adjusted according to the actual standby-electricity demand of the SSD; under the condition that the basic failure rate of the standby-electricity capacitor is ensured, the derating amplitude of the standby-electricity capacitor is greatly reduced, the standby-electricity quantity of a single standby-electricity capacitor is increased, and the number of the standby-electricity capacitors for the standby-electricity requirement of the SSD is reduced.

Description

Charging method, device and solid state hard disk

Technical field

The present invention relates to the field of computers, and in particular, to a charging method, device, and solid state hard disk.

Background technique

Solid State Drives (SSDs) are hard disk drives that use NAND Flash as the main storage medium. They are mainly composed of controllers, Dynamic Random Access Memory (DRAM) and NAND Flash is composed. When the data to be written needs to be written into the SSD, the control chip of the SSD first caches the data to be written in the DRAM with higher read/write speed, and then writes the data buffered in the DRAM to the NAND Flash with slower read and write speed. In order to improve the overall data writing speed of the SSD.

Since DRAM is a volatile memory, once the SSD is powered down due to a power failure, the data stored in the DRAM is lost. In order to avoid data loss in the DRAM caused by abnormal power failure of the SSD, a backup power supply is usually also provided in the SSD. The SSD structure with backup power can be set as shown in Figure 1. After the SSD is powered on, the external power supply can supply power to the SSD controller through the power interface, and can also charge the backup power supply through the power interface. When the SSD is powered off abnormally, the SSD controller can be powered by the backup power supply to maintain the SSD, so that the data cached in the DRAM can be written into the NAND Flash in the SSD, thereby avoiding data loss caused by abnormal powering down of the SSD.

The capacitor has the characteristics of simple structure and large reserve power. Therefore, in the prior art, a capacitor is generally used as a backup power source to reserve power for the SSD. When the capacitor is used for SSD power supply, the capacitor needs to be derated. The derating design can make the working stress of the capacitor under working properly lower than the rated value of the capacitor, thereby reducing the basic failure rate of the capacitor and improving the reliability when the capacitor is used for SSD backup. Since the difference in capacitance failure rate is compared under different voltage deratings, and the higher the voltage derating, the lower the basic failure rate of the capacitor, In order to improve the reliability of using S capacitors for backup, it is usually necessary to greatly degrade the capacitance. Taking tantalum capacitor as an example, when the operating voltage is reduced to 90% of the rated voltage, the failure rate is about 2fit; when the operating voltage is reduced to 70% of the rated voltage, the failure rate is reduced to 0.19fit, which is satisfied for the SSD. The basic failure rate requirement for electricity is that in practical use it is usually necessary to reduce the operating voltage of the tantalum capacitor to 70% of the rated voltage.

A large derating of the capacitors, while meeting the reliability requirements of the capacitors, also greatly reduces the amount of power that can be saved by a single capacitor. In the case that a single capacitor can save power, in order to meet the power requirement of writing data in DRAM into NAND Flash, it is necessary to increase the amount of capacitor required for standby power supply of SSD, resulting in an increase in the number of capacitors used in SSD. .

Summary of the invention

The embodiments of the present invention provide a charging method, a device, and a solid state hard disk, so as to solve the problem that the capacitor is used for the SSD backup in the prior art, and the capacitor needs to be greatly derated, resulting in a large amount of capacitance in the SSD.

In a first aspect, an embodiment of the present invention provides a charging method, the method comprising: detecting the volatile memory data storage amount, where the data storage amount of the volatile memory is pre-divided into a plurality of intervals, each The interval corresponds to a charging voltage; the interval in which the detected volatile memory data storage amount is determined is determined; and the charging capacitor corresponding to the interval in which the volatile memory data storage amount is located is used to charge the standby capacitor. Because the amount of the volatile memory data storage is positively related to the actual backup power requirement of the SSD, the method provided by the present invention dynamically adjusts the power of the capacitor backup according to the actual backup power requirement of the SSD, and can ensure the basic capacitance. In the case of failure rate, the magnitude of the capacitance derating is greatly reduced, and the amount of power required for the single capacitor is increased, thereby reducing the amount of capacitance required in the SSD.

With reference to the first aspect, in a first possible implementation manner of the first aspect, the detecting the volatile memory data storage quantity comprises: detecting power consumption of the volatile memory; or detecting the volatile The amount of data that is cached by the memory. Using this implementation, The amount of volatile memory data storage can be easily determined.

With reference to the first aspect or the first possible implementation manner of the first aspect, in the second possible implementation manner of the first aspect, when the backup capacitor is a tantalum capacitor with a rated voltage of 25V, the volatile memory The data storage amount is divided into three intervals in advance, the first interval is smaller than the first threshold, the second interval is greater than the first threshold, less than the second threshold, and the third interval is greater than the second threshold, the first The charging voltage corresponding to the interval is 22.5 V, the charging voltage corresponding to the second interval is 22.5 V or 17.5 V, and the charging voltage corresponding to the third interval is 17.5 V.

In a second aspect, an embodiment of the present invention provides a charging apparatus including means for performing the method steps of the first aspect or the first aspect of the first aspect.

In a third aspect, an embodiment of the present invention further provides an SSD, including a charging control module, a backup capacitor, and a volatile memory, wherein the backup capacitor is a backup power source of the SSD; a control module, configured to detect the volatile memory data storage amount, where the data storage amount of the volatile memory is pre-divided into a plurality of intervals, each interval corresponding to one charging voltage; determining the detected volatile The interval in which the amount of memory data storage is located; charging the backup capacitor by using a charging voltage corresponding to the interval in which the volatile memory data storage amount is located. The SSD can dynamically adjust the power of the capacitor backup according to the actual backup power requirement, and can greatly reduce the magnitude of the capacitor derating and improve the power of the single capacitor backup, thereby reducing the SSD in the case of ensuring the basic failure rate of the capacitor. The amount of capacitance required.

DRAWINGS

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings to be used in the embodiments or the description of the prior art will be briefly described below, and it will be apparent to those skilled in the art that In other words, other drawings can be obtained based on these drawings without paying for creative labor.

1 is a schematic structural view of an SSD in the prior art;

2 is a schematic structural diagram of an embodiment of an SSD according to the present invention;

3 is a schematic flow chart of an embodiment of a charging method of the present invention;

4 is a schematic structural view of an embodiment of a charging device of the present invention.

detailed description

Since the backup energy requirement of the backup capacitor is positively correlated with the amount of data to be written buffered in the volatile memory. For example, in the case of maximum write performance, that is, when the data to be written is occupied by the storage space of the volatile memory, the power consumption of the SSD can reach 11 W. Accordingly, the backup capacitor requires 200 mJ of backup energy to enable the volatile memory. The data in the data is transferred to NAND Flash; in the case of normal application performance, the power consumption of the SSD is only 9W. Correspondingly, the backup capacitor only needs 120mJ of backup energy to transfer the data in the volatile memory. To NAND Flash.

The structure of the SSD of the present invention is as shown in FIG. 2, wherein the backup power source is a backup capacitor 201; the SSD controller may include a charging control module 202, and the charging control module 202 can detect the write performance of the SSD, and The charging voltage of the backup capacitor 201 is controlled according to the write performance of the SSD, so that the charging voltage of the backup capacitor 201 can be dynamically adjusted according to the change of the amount of volatile memory data storage, which can reduce the backup while satisfying the backup power requirement. The demand for the number of electrical capacitors. The backup capacitor 201 can be a backup capacitor with a rated voltage of 25V.

3 is a flow chart of an embodiment of a charging method of the present invention, the method comprising the following steps:

Step 301: After the SSD is powered on, the predetermined charging voltage is used to charge the backup capacitor.

After the SSD is powered on, the charging control module in the SSD may first charge the backup capacitor with a predetermined charging voltage, wherein the backup capacitor is used to reserve power for the SSD. The predetermined charging voltage may be set according to the difference in the backup capacitance. Generally, the predetermined charging voltage may be 70% of the rated voltage of the backup capacitor.

Step 302, detecting the amount of volatile memory data storage.

Volatile memory data storage determines the SSD will be volatile when it is powered off abnormally. The amount of data cached in the memory is written to the NAND Flash. Therefore, after the SSD is powered on, the charge control module can continuously detect the amount of volatile memory data storage. The data cached in the volatile memory can be detected by the charging control module through the firmware of the SSD.

Volatile memory data storage can be expressed in terms of power consumption, in addition to the amount of data that can be cached by volatile memory.

For example, the amount of data storage in a volatile memory can generally be expressed as the power consumption of volatile memory. The higher the power consumption of the volatile memory, the more frequent the write operation of the volatile memory, thus indicating the higher the amount of data storage of the volatile memory. Correspondingly, the lower the power consumption of the volatile memory, the lower the amount of volatile memory data storage; and the power consumption of the volatile memory can be detected by the charging control module through the power consumption detection module in the SSD.

For another example, the amount of data storage of the volatile memory can also be expressed as the power consumption of the NAND Flash. Since the power consumption of NAND Flash in data erasing operation is greater than that in data reading, the NAND Flash data erasing operation is positively correlated with the power consumption of NAND Flash, and the more erasing operations are the NAND Flash functions. The greater the consumption. The higher the power consumption of NAND Flash, the more frequent the data erasing operation of NAND Flash, and the higher the data storage capacity of volatile memory. Correspondingly, the lower the power consumption of NAND Flash, the lower the amount of volatile memory data storage. The power consumption of the NAND Flash can be detected by the charging control module through the power consumption detecting module in the SSD, and the data buffered in the volatile memory can be detected by the charging control module through the firmware of the SSD.

Since the power consumption of the volatile memory and the power consumption of the NAND Flash are both positively related to the amount of volatile memory data storage, and the power consumption of other devices in the SSD is relatively stable, the power consumption of the SSD is also related to the loss. The amount of memory data storage is positively correlated. Therefore, the amount of volatile memory data storage can be expressed as the power consumption of the volatile memory, the power consumption of the NAND Flash, or the power consumption of the SSD.

Step 303: Determine an interval in which the detected volatile memory data storage amount is located.

Before charging the backup capacitor, the data storage amount of the volatile memory may be divided into at least two data storage interval intervals, wherein each data storage interval is between Do not overlap each other and set at least one charging voltage for each interval. After detecting the volatile memory data storage amount, the charging control module may determine the interval in which the detected volatile memory data storage amount is located.

Step 304: Charging the backup capacitor with a charging voltage corresponding to the volatile memory data storage amount.

After determining the interval in which the detected volatile memory data storage amount is located, the charging control module may charge the backup capacitor by using a charging voltage corresponding to the interval in which the volatile memory data storage amount is located.

For example, the data storage amount of the volatile memory is divided into three intervals in advance, the first interval is smaller than the first threshold, the second interval is greater than the first threshold, less than the second threshold, and the third interval is greater than a second threshold, if the charge control module detects that the volatile memory data storage amount is lower than the first threshold, then the first charging voltage may be used to charge the backup capacitor; if the charging control module detects the When the amount of volatile memory data storage is higher than the second threshold, the second charging voltage is used to charge the backup capacitor, wherein the first threshold is lower than the second threshold, and the first charging voltage is lower than the first Two charging voltages. The first charging voltage may be the same as the preset charging voltage. When the first charging voltage is 70% of the rated voltage of the backup capacitor, the second charging voltage may be the 90% of the rated voltage of the backup capacitor.

Depending on the representation of the volatile memory data storage, the representation of the thresholds may also vary.

For example, when the amount of data of the cached data of the volatile memory is used to represent the volatile memory data storage amount, the first threshold may be a first preset data amount, and the second threshold may be Two preset data amounts. Specifically, when the data amount of the cache data is less than the first preset data amount, the charging control module may charge the backup capacitor by using a predetermined charging voltage. When the amount of data of the buffered data is greater than the second predetermined amount of data, the second charging voltage may be used to charge the standby capacitor.

For example, when the power consumption of the volatile memory is used to represent the volatile memory data storage amount, the first threshold may be a first preset power consumption, and the second threshold may be a second pre- Set the power consumption. Specifically, when the volatile memory consumes less power than the first pre- When power consumption is set, the charging control module can charge the backup capacitor with a predetermined charging voltage. When the power consumption of the volatile memory is greater than the second preset power consumption, the second charging voltage may be used to charge the standby capacitor.

In order to avoid frequent switching of the charging voltage, the charging control module may charge the standby capacitor with a predetermined charging voltage after the volatile memory data storage amount is lower than the first threshold and continues for more than a predetermined period of time; similarly, the charging control module The secondary charging voltage may also be charged with the second charging voltage after the volatile memory data storage amount is higher than the first threshold and continues for more than a predetermined period of time. If the charging control module detects that the volatile memory data storage amount is between the first threshold and the second threshold, the charging voltage for charging the backup capacitor may not be adjusted, or according to the volatile The trend of the amount of storage of the memory data is adjusted to the charging voltage for charging the backup capacitor.

Adjusting the charging voltage for charging the backup capacitor according to the change trend of the volatile memory data storage amount includes: when the volatile memory data storage amount is changed from being less than the first threshold to being located at the first threshold and the second threshold When the time is between, the second charging voltage is used to charge the backup capacitor; when the volatile memory data storage amount is changed from greater than the first threshold to between the first threshold and the second threshold, the reservation is adopted. The charging voltage charges the backup capacitor.

Adjusting the charging voltage of the backup capacitor according to the change trend of the volatile memory data storage amount, the charging capacity of the backup capacitor can be adjusted, and further ensuring that the amount of power in the backup capacitor is sufficient to maintain the volatile memory Data is written into NAND Flash and the basic failure rate of the backup capacitor is further reduced.

Taking a tantalum capacitor with a rated voltage of 25V as an example, the predetermined charging voltage can be 17.5V, and the second charging voltage can be 22.5V. After the SSD is powered up, the charging control module can charge the tantalum capacitor with a predetermined charging voltage of 17.5V, and then start detecting the power consumption of the SSD or the amount of data of the data buffered by the volatile memory.

When the charging control module detects that the power consumption of the volatile memory is less than 9W, or the data amount of the buffered data is less than 6Mbit, the charging control module may charge the standby capacitor by using a voltage of 17.5V.

When the charging control module detects that the volatile memory consumes more than 11W, or The data volume of the cache data is greater than 11 Mbit, and the charging control module can charge the backup capacitor with a voltage of 22.5V.

When the charging control module detects that the power consumption of the volatile memory is between 9W and 11W, or the data amount of the buffered data is between 6Mbit and 10Mbit, the charging control module may continue to adopt 17.5V or The 22.5V voltage is used to charge the backup capacitor. Further, when the charging control module detects that the power consumption of the volatile memory changes from 9W to 9W to 11W, or the data amount of the cached data changes from less than 6Mbit to 6Mbit to 10Mbit, The charging capacitor can be charged from a voltage of 17.5V, and the standby capacitor can be charged by using a voltage of 22.5V; or when the charging control module detects the power consumption of the volatile memory from 11W or more changes to between 9W and 11W, or when the amount of data of the cached data changes from more than 10Mbit to between 6Mbit and 10Mbit, the backup capacitor can be charged from a voltage of 22.5V. The backup capacitor is charged with a voltage of 17.5V.

It should be noted that the charging control module can continuously detect the amount of volatile memory data storage, and charge the backup capacitor with a charging voltage corresponding to the volatile memory data storage amount, that is, after step 301. Step 302 to step 303 are repeated until the SSD is powered off.

It should be noted that the foregoing description of the present invention is made by taking only three sections as an example, and more or less sections may be divided according to actual needs. For the specific implementation manner, reference may be made to the foregoing, and details are not described herein again.

In this embodiment, the amount of volatile memory data storage of the solid state hard disk is detected; and the charging voltage corresponding to the volatile memory data storage amount is used to charge the backup capacitor. Since the amount of volatile memory data storage is positively related to the actual backup power requirement of the SSD, the method provided by the present invention dynamically adjusts the power of the backup capacitor according to the actual backup power requirement of the SSD, and can ensure the backup capacitor. In the case of a basic failure rate, the magnitude of the backup capacitor derating is greatly reduced, the amount of power for a single backup capacitor is increased, and the amount of backup capacitor required for the SSD backup is reduced.

FIG. 4 is a schematic structural view of an embodiment of a charging device of the present invention. The charging device described in this embodiment may be disposed in the SSD for performing the charging method corresponding to FIG. 2, Controls the charging voltage of the backup power supply in the SSD.

As shown in FIG. 4, the apparatus may include a detecting unit 401, a determining unit 402, and a charging unit 403.

The detecting unit 401 is configured to detect the volatile memory data storage amount, where the data storage amount of the volatile memory is divided into a plurality of intervals, each interval corresponding to one charging voltage; the determining unit 402, And determining a section in which the detected volatile memory data storage amount is located; charging unit 403, configured to charge a capacitor by using a charging voltage corresponding to a write performance of the SSD, wherein the capacitor is the SSD Backup power.

When the backup capacitor is a tantalum capacitor with a rated voltage of 25V, the volatile memory performance is pre-divided into three intervals, the first interval is smaller than the first threshold, and the second interval is greater than the first threshold. The second interval is greater than the second threshold, the charging voltage corresponding to the first interval is 22.5V, and the charging voltage corresponding to the second interval is 22.5V or 17.5V, and the third interval corresponds to The charging voltage is 17.5V.

Optionally, the detecting unit 401 is specifically configured to detect power consumption of the volatile memory, or detect a data amount of data cached by the volatile memory.

Optionally, the detecting unit 401 is specifically configured to detect power consumption of the volatile memory; or detect a data amount of data cached by the volatile memory in the SSD.

Optionally, the charging unit 403 is specifically configured to: when the power consumption of the volatile memory is less than the first preset power consumption, or when the data volume of the cache data is less than the first preset data amount, The predetermined charging voltage charges the backup capacitor.

Optionally, the charging unit 403 is configured to: when the power consumption of the volatile memory is greater than the second preset power consumption, or when the data volume of the cache data is greater than the second preset data amount, The second charging voltage charges the backup capacitor.

Wherein, when the backup capacitor is a backup capacitor having a rated voltage of 25V, the predetermined charging voltage is 22.5V, and the second charging voltage is 17.5V.

In contrast to the charging method and charging device of the present invention, the present invention also provides an SSD.

As shown in FIG. 2 , the SSD includes a backup capacitor 201 and a charging control module 202 .

The backup capacitor 201 is the SSD backup power source, and may be a backup capacitor with a rated voltage of 25V.

The charging control module 202 is configured to detect the volatile memory data storage amount, and charge the standby power capacitor by using a charging voltage corresponding to the interval in which the volatile memory data storage amount is located. Specifically, the charging control module 202 may detect the volatile memory data storage amount, where the data storage amount of the volatile memory is divided into a plurality of intervals, each interval corresponding to one charging voltage; And detecting the interval in which the volatile memory data storage amount is located; charging the standby power capacitor by using a charging voltage corresponding to the interval in which the volatile memory data storage amount is located.

For example, when the volatile memory data storage amount is lower than the first threshold, the charging control module 202 may charge the backup capacitor 201 with a predetermined charging voltage; or, in the volatile memory data storage When the amount is higher than the second threshold, the charging control module 202 may charge the backup capacitor 201 by using a second charging voltage; wherein the first threshold is lower than a second threshold, and the predetermined charging voltage is lower than the second Two charging voltages. When the backup capacitor 201 is a backup capacitor having a rated voltage of 25V, the predetermined charging voltage is 22.5V, and the second charging voltage is 17.5V.

Optionally, the charging control module 202 can include a power consumption detecting module. The power consumption detection module may be an application specific integrated circuit (ASIC) or firmware for detecting power consumption of the volatile memory; or for detecting a volatile memory in the SSD. The amount of data that is cached. When the power consumption of the volatile memory is less than the first preset power consumption, or the data amount of the buffer data is less than the first preset data amount, the charging control module 202 may adopt a predetermined charging voltage as the The backup capacitor 201 is charged. When the power consumption of the volatile memory is greater than the second preset power consumption, or the data amount of the buffer data is greater than the second preset data amount, the charging control module 202 may adopt the second charging voltage as the The backup capacitor 201 is charged.

It will be apparent to those skilled in the art that the techniques in the embodiments of the present invention can be implemented by means of software plus a necessary general hardware platform. Based on the understanding, the technical solution in the embodiment of the present invention can be embodied in the form of a software product. The computer software product may be stored in a storage medium, such as a Read Only Memory (ROM)/Ramdom Access Memory (RAM), a magnetic disk, an optical disk, etc., and includes a plurality of instructions for making one A computer device (which may be a personal computer, server, or network device, etc.) performs the methods described in various embodiments of the present invention or in some portions of the embodiments.

Claims

A charging method is applied to a solid state hard disk, and the solid state hard disk includes a backup capacitor and a volatile memory, wherein the method includes:

Detecting the volatile memory data storage amount, where the data storage amount of the volatile memory is pre-divided into a plurality of intervals, each interval corresponding to one charging voltage;

Determining an interval in which the detected volatile memory data storage amount is located;

The backup capacitor is charged by using a charging voltage corresponding to the interval in which the volatile memory data storage amount is located.
The method of claim 1 wherein said detecting said volatile memory data storage amount comprises:

Detecting power consumption of the volatile memory;

Alternatively, detecting the amount of data of the data cached by the volatile memory.
The method according to claim 1 or 2, wherein when the backup capacitor is a tantalum capacitor having a rated voltage of 25 V, the data storage amount of the volatile memory is divided into three sections in advance, first The interval is smaller than the first threshold, the second interval is greater than the first threshold, is smaller than the second threshold, the third interval is greater than the second threshold, and the charging voltage corresponding to the first interval is 22.5V, the second interval The corresponding charging voltage is 22.5V or 17.5V, and the charging voltage corresponding to the third interval is 17.5V.
A charging device, comprising:

a detecting unit, configured to detect the volatile memory data storage amount, where the data storage amount of the volatile memory is pre-divided into a plurality of intervals, each interval corresponding to one charging voltage;

a determining unit, configured to determine an interval in which the detected volatile memory data storage amount is located;

a charging unit for using a charging voltage corresponding to a write performance of the SSD The capacitor is charged, wherein the capacitor is a backup power source of the SSD.
The device of claim 4 wherein:

The detecting unit is specifically configured to detect power consumption of the volatile memory, or detect a data amount of data cached by the volatile memory.
The apparatus according to claim 4 or 5, wherein when the backup capacitor is a tantalum capacitor having a rated voltage of 25 V, the volatile memory performance is divided into three sections in advance, and the first section is smaller than a first threshold, the second interval is greater than the first threshold, less than the second threshold, the third interval is greater than the second threshold, and the charging voltage corresponding to the first interval is 22.5V, and the charging corresponding to the second interval The voltage is 22.5V or 17.5V, and the charging voltage corresponding to the third interval is 17.5V.
A solid state hard disk SSD, comprising a charging control module, a backup capacitor and a volatile memory,

The backup capacitor is a backup power source of the SSD;

The charging control module is configured to detect the volatile memory data storage amount, where the data storage amount of the volatile memory is pre-divided into a plurality of intervals, each interval corresponding to one charging voltage; determining the detected location The interval in which the volatile memory data storage amount is located; charging the standby power capacitor by using a charging voltage corresponding to the interval in which the volatile memory data storage amount is located.