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WO2017140034A1 - 套刻键标、形成套刻键标的方法和测量套刻精度的方法 - Google Patents

套刻键标、形成套刻键标的方法和测量套刻精度的方法 Download PDF

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Publication number
WO2017140034A1
WO2017140034A1 PCT/CN2016/080885 CN2016080885W WO2017140034A1 WO 2017140034 A1 WO2017140034 A1 WO 2017140034A1 CN 2016080885 W CN2016080885 W CN 2016080885W WO 2017140034 A1 WO2017140034 A1 WO 2017140034A1
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WO
WIPO (PCT)
Prior art keywords
sub
mark
marks
engraved
indicia
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PCT/CN2016/080885
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English (en)
French (fr)
Inventor
张玉虎
王军帽
聂彬
岳浩
Original Assignee
京东方科技集团股份有限公司
合肥京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 合肥京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/527,910 priority Critical patent/US10162273B2/en
Publication of WO2017140034A1 publication Critical patent/WO2017140034A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Definitions

  • the present disclosure relates to the field of lithography, and in particular to a method of engraving a key, forming a key, and a method of measuring the precision of the splicing.
  • Photolithography is a process of transferring a pattern on a mask onto a substrate by means of alignment, exposure, and development. In the case of multiple layers, it is important to ensure that the graphics of the different layers are aligned with each other.
  • Overlay bias refers to positional deviation between graphics of different layers, for example due to mask misalignment.
  • FIG. 1A and 1B are plan views of prior art scribing keys used to measure the overlay accuracy between different layers.
  • a plurality of marks 201 as rectangular frames are formed in the first layer (only three set marks 201 1 , 201 2 and 201 3 are shown as an example).
  • FIG. 1B when subsequent layers are formed over the first layer, marks 202 1 , 202 2 and 202 3 shown as black squares are sequentially formed in the corresponding layers.
  • the mark 202 1 is formed in the second layer
  • the mark 202 2 is formed in the third layer
  • the mark 202 3 is formed in the fourth layer.
  • the marks 202 1 , 202 2 and 202 3 are located inside the rectangular frames 201 1 , 201 2 and 201 3 , respectively.
  • the center point coordinates of each black square and the center point coordinates of each rectangular frame may be determined in a pre-established coordinate system.
  • the precision of the engraving between the layer corresponding to the black square and the first layer can be measured.
  • the engraved key can be used to measure the engraving precision between different layers (whether the lowest layer and the higher layer, or two different higher layers). Same It would be advantageous to provide a method of forming a scribed key and a method of measuring the accuracy of the scribe.
  • a scuffing key comprising: at least two engraved indicia, each of the engraved indicia having a first sub-mark and a second sub-mark that are centrally symmetric with each other.
  • Each of the first sub-mark and the second sub-mark includes two strip patterns that are perpendicular to each other and have a common end, and at least two of the engraved marks are located at different layers.
  • the first sub-marks of the engraved indicia are sequentially arranged to form a first stepped pattern, and the second sub-marks of the engraved indicia are sequentially arranged to form a second stepped pattern.
  • the first stepped graphic and the second stepped graphic do not overlap each other.
  • one of the at least two engraved indicia is arranged such that its first sub-mark and the second sub-mark are connected at their symmetrical centers.
  • the first sub-marks of the at least two engraved marks are sequentially arranged in a first direction away from the center of symmetry, and the second sub-marks of the at least two engraved marks are at The first directions are arranged in the opposite direction.
  • the two strip patterns have the same length.
  • a display substrate including a scribing key as described above.
  • the engraved key can be located in a non-display area of the display substrate.
  • a display panel comprising the display substrate as described above.
  • a method of forming a scribing key comprising: forming at least two engraved indicia, each of the engraved indicia having a first sub-mark and a second sub-mark that are centrally symmetric with each other .
  • Each of the first sub-mark and the second sub-mark includes two strip patterns that are perpendicular to each other and have a common end, and at least two of the engraved marks are located at different layers.
  • the first sub-marks of the engraved indicia are sequentially arranged to form a first stepped pattern, and the second sub-marks of the engraved indicia are sequentially arranged to form a second stepped pattern.
  • the first stepped graphic and the second stepped graphic do not overlap each other.
  • one of the at least two engraved indicia is arranged such that its first sub-mark and the second sub-mark are connected at their symmetrical centers.
  • the first sub-mark of the at least two engraved indicia is away from The first direction of the symmetry center is sequentially arranged, and the second sub-marks of the at least two engraved marks are sequentially arranged in a direction opposite to the first direction.
  • the two strip patterns have the same length.
  • a method of measuring overlay accuracy comprising: acquiring images of at least two engraved marks, each of the engraved indicia having a first sub-mark and a second center-symmetric with each other Subtag.
  • Each of the first sub-mark and the second sub-mark includes two strip patterns that are perpendicular to each other and have a common end, and at least two of the engraved marks are located at different layers.
  • the method also includes measuring a scribe precision between the different layers based on location information of the at least two scribe marks in the image.
  • measuring the overlay accuracy includes determining, in the image, a center of symmetry of a first sub-mark and a second sub-mark of each of two engraved indicia located in different layers; determining the determined center of symmetry Positional deviation between; and measuring the precision of the engraving between the different layers based on the positional deviation.
  • the first sub-marks of the engraved indicia are sequentially arranged to form a first stepped pattern
  • the second sub-marks of the engraved indicia are sequentially arranged to form a second stepped pattern.
  • Measuring the overlay precision includes: based between two adjacent first sub-marks in the first stepped graph or two adjacent second sub-marks in the second stepped graph in the image The overlap of the two adjacent first sub-marks or the two adjacent second sub-marks is determined to have a slanting deviation.
  • 1A and 1B are plan views of prior art scribing keys used to measure the engraving precision between different layers;
  • FIG. 2 is a plan view of a scribe key according to an embodiment of the present disclosure
  • Figure 3 is a plan view of the engraved key shown in Figure 2, wherein one of the engraved marks is offset in the x and y directions;
  • FIG. 4 is a plan view of a variation of a scribed key in accordance with an embodiment of the present disclosure
  • FIG. 5 is a flow chart illustrating a method of forming a scribe key according to an embodiment of the present disclosure
  • FIG. 6 is a cross-sectional view of a scribed key in accordance with an embodiment of the present disclosure.
  • FIG. 7 is a flow chart illustrating a method of measuring overlay accuracy in accordance with an embodiment of the present disclosure.
  • first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/ Some should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer Thus, a first element, component, region, layer, or section, which is discussed below, may be referred to as a second element, component, region, layer or section without departing from the teachings of the disclosure.
  • the set of key signatures includes a first set of indicia 201, 201', a second set of indicia 202, 202' and a third set of indicia 203, 203'.
  • the first set of inscribed marks 201, 201' has a first sub-mark 201 and a second sub-mark 201' that are centrally symmetrical with each other.
  • the second set of indicia 202, 202' has a first sub-mark 202 and a second sub-mark 202' that are centrally symmetric with each other.
  • the third set of inscribed marks 203, 203' has a first sub-mark 203 and a second sub-mark 203' that are center-symmetrical to each other.
  • the first set of indicia 201, 201' may be formed in a lower layer, and the second engraved indicia 202, 202' and the third engraved indicia 203, 203' may be formed in the lower layer In the upper layer above.
  • the first set of marks 201, 201' may be formed on the first layer on the substrate
  • the second set of marks 202, 202' may be formed on the second layer above the first layer
  • the second set of marks 203 , 203' can A third layer is formed over the second layer.
  • the second set of indicia 202, 202' and the third set of indicia 203, 203' may be formed in the same layer.
  • each of the first sub-marks 201, 202, 203 and the second sub-marks 201', 202', 203' includes two mutually perpendicular strip patterns. These two bar graphs have a common end.
  • each of the first sub-marks 201, 202, 203 may be sequentially arranged to form a first stepped pattern when viewed from above, and each of the second sub-marks 201', 202', 203' may be sequentially arranged. To form a second stepped pattern.
  • the first subtag and the second subtag may be arranged in other graphics.
  • the engraved key shown in Figure 2 can be considered to be formed with the first layer, the second layer and the third layer precisely aligned.
  • first stepped pattern each of the first sub-marks 201, 202, 203 is joined end to end to form a continuous pattern.
  • second stepped pattern each of the second sub-marks 201', 202', 203' meets end to end to form a continuous pattern.
  • Figure 3 is a plan view of the engraved key shown in Figure 2 with one of the engraved indicia offset in the x and y directions.
  • the second set of indicia 202, 203' is offset in the x and y directions, while the first engraved indicia 201, 201' and the second engraved indicia 203, 203' are maintained in FIG. In the same position.
  • the coordinate system in FIG. 3 is shown for ease of description of the offset direction, and is not required in accordance with embodiments of the present disclosure (discussed later).
  • the offset first sub-label 202 (corresponding to the second layer) partially overlaps the adjacent first sub-mark 201 (corresponding to the first layer), and the adjacent first first sub- The mark 203 (corresponding to the third layer) is broken.
  • the offset second sub-label 202' (corresponding to the second layer) partially overlaps the adjacent second sub-mark 203' (corresponding to the third layer), and the adjacent second sub-segment The mark 201' (corresponding to the first layer) is broken.
  • the overlap and breakage present in the stepped pattern shown in Figure 3 is readily detectable compared to the continuous stepped pattern shown in Figure 2. Therefore, it is possible to qualitatively judge whether or not there is a registration deviation between different layers by judging whether there is overlap (or disconnection) in the stepped pattern. This can be done before quantitatively measuring the overlay accuracy.
  • the first stepped pattern formed by each of the first sub-marks and the second stepped pattern formed by each of the second sub-marks do not overlap each other.
  • the overlap between the adjacent first sub-marks or the adjacent second sub-marks is not disturbed by the overlap existing between the first and second stepped patterns, and thus can be more easily observed. This can improve the reliability of qualitative judgment results.
  • the two strip patterns of each of the first sub-marks and the second sub-marks may have the same length. This provides the same overlap resolution in both the x and y directions.
  • the two strip patterns may have different lengths, or the strip patterns of different sub-marks may have different lengths.
  • the positional accuracy between the different layers can be measured based on the positional information of the first set of inscription marks 201, 201', the second set of inscribed marks 202, 202' and the third set of inscribed marks 203, 203' .
  • the symmetric centers of the first sub-marks and the second sub-marks of the two engraved marks located in different layers may be determined, and then the difference between the different layers is measured based on the determined positional deviation between the two symmetric centers Engraving accuracy.
  • the first, second and third layers are precisely aligned such that the first set of engraved marks 201, 201 'center of symmetry O 1, the second set of engraved marks 202, 202' symmetrical center O 2 and the third overlay mark 203, 203 'of a center of symmetry O 3 coincide with each other (O 1, O 2 and O 3 are not shown).
  • the first set of engraved marks 201, 201 '. 1 center of symmetry O and the third overlay mark 203, 203' of a center of symmetry O 3 remains unchanged in position (shown as O 1,3 ), and the center of symmetry O 2 of the second set of indicia 202, 202' is offset.
  • the accuracy of the staking between the first layer and the second layer can be measured by determining the deviation between the symmetry center O 1 and the symmetry center O 2 , and by determining the center of symmetry O 2 and the center of symmetry O 3
  • the deviation can measure the precision of the engraving between the second layer and the third layer.
  • the center of symmetry of the paired first sub-mark and the second sub-mark can be determined, for example, by extending the first sub-mark and the second sub-pair with an imaginary line (as indicated by the dashed line in FIG. 3)
  • the respective two strip patterns are marked such that the imaginary line forms a rectangle along with the strip pattern; the center point of the rectangle is determined as the center of symmetry.
  • other methods may be employed.
  • FIG. 4 is a plan view of a variation of a scribe key in accordance with an embodiment of the present disclosure.
  • the first set of indicia 201, 201' is arranged such that the first sub-mark 201 and the second sub-mark 201' are joined at their centers of symmetry.
  • the distance between the first sub-marker 201 and the second sub-marker 201' is minimized (zero). This can potentially reduce the footprint of the engraved key.
  • each of the first sub-marks 201, 202, 203 is sequentially arranged in a first direction away from the center of symmetry.
  • the first direction may be, for example, the lateral or longitudinal direction of the substrate.
  • Each of the second sub-marks 201', 202', 203' is in a direction opposite to the first direction Arrange in order. This allows all of the first sub-marks and the second sub-marks to be distributed substantially along one trajectory such that the overlap between adjacent sub-marks becomes easier to identify in the event of a slanting deviation. Therefore, such an arrangement takes into account both reduced substrate footprint and enhanced retracement resolution.
  • the stepped pattern described herein may refer to a pattern formed by sequentially arranging two or more sub-marks by translation or rotation, each of the sub-marks including two mutually perpendicular and having a common end.
  • Strip graphics In some embodiments, in the ideal case (eg, when the layers are precisely aligned), the individual sub-tags are joined end to end to form a continuous pattern, and the strip patterns directly adjacent to each other are perpendicular to each other.
  • three different stepped patterns are illustrated in Figures 2-4, the disclosure is not limited thereto. In other embodiments, other stepped graphics are also possible.
  • FIG. 5 is a flow chart illustrating a method of forming a scribed key in accordance with an embodiment of the present disclosure.
  • the lower layer is patterned to form a first set of indicia.
  • An example of the first set of inscribed marks is the first set of indicia 201, 201' as described above.
  • the lower layer can be formed on the substrate, that is, the lower layer is the first layer on the substrate.
  • the present disclosure is not limited thereto.
  • the lower layer may be an intermediate layer disposed between the two layers.
  • the upper layer above the lower layer is patterned to form a second set of indicia.
  • An example of a second set of indicia is the second engraved indicia 202, 202' as described above.
  • another higher layer is patterned to form a third set of indicia.
  • An example of a third set of inscribed marks is a third set of indicia 203, 203' as described above.
  • Figure 6 is a cross-sectional view of a scribe key formed using the method illustrated in Figure 5.
  • a first layer as a lower layer is formed on the substrate 601.
  • the first layer is patterned to form a first set of indicia 201, 201'.
  • the first layer is coated with an intermediate insulator layer 602.
  • a second layer as a higher layer is formed on the intermediate insulator layer 602.
  • the second layer is patterned to form a second set of indicia 202, 202'.
  • the second layer is coated with an intermediate insulator layer 603.
  • a third layer as another higher layer is formed on the intermediate insulator layer 603.
  • the third layer is patterned to form another third engraved indicia 203, 203'.
  • the first set of indicia 201, 201', the second engraved indicia 202, 202' and the third engraved indicia 203, 203' are arranged in different layers in the pattern shown in FIG.
  • “lower layer” and “higher layer” as used herein may refer to a functional layer in which a functional element, such as, for example, a circuit graphic, may be patterned in addition to the engraved key.
  • FIG. 7 is a flow diagram illustrating a method of measuring overlay accuracy in accordance with an embodiment of the present disclosure.
  • Cheng Tu. images of at least two engraved indicia are acquired.
  • at least two of the engraved indicia are in different layers.
  • An example of a stencil mark may be a first set of indicia 201, 201', a second set of indicia 202, 202' and a third set of indicia 203, 203' as described above.
  • An image of the engraved key can be obtained by a measuring device (for example, an optical microscope). This image can be provided for analysis.
  • the overlay precision between the different layers is measured based on the location information of the at least two overlay marks in the image.
  • the symmetric center O 2 of the first sub-mark 202 and the second sub-mark 202' of the second set of inscribed marks and the first sub-mark 203 of the third set of indicia may be determined in the image.
  • the symmetry center O 3 of the second sub-mark 203' may be determined using the method as described above with reference to FIG. Then, the positional deviation between the two symmetric centers O 2 and O 3 is determined.
  • the overlay precision between the second layer and the third layer can be measured based on the positional deviation.
  • the symmetric center O 1 of the first sub-mark 201 and the second sub-mark 201 ′ of the first set of engraved marks and the first sub-mark 202 and the second sub-mark 202 ′ of the second set of marks may be determined in the image.
  • Symmetric center O 2 The determination of the center of symmetry may be performed using the method as described above with reference to FIG. Then, the positional deviation between the two symmetry centers O 1 and O 2 is determined. The overlay precision between the first layer and the second layer can be measured based on the positional deviation.
  • a qualitative determination of the overlay accuracy can also be performed. Specifically, it may be based on two adjacent first sub-marks 201 and 202 in the first stepped pattern in the image (or two adjacent second sub-marks 203' and 202' in the second stepped pattern) An overlap between the first layer and the second layer corresponding to the first sub-marks 201 and 202 (or the third layer and the second layer corresponding to the second sub-marks 203' and 202') deviation. It should be understood that the disconnection between adjacent first sub-marks or adjacent second sub-marks can also be used for qualitative determination of the overlay accuracy.
  • embodiments of the present disclosure enable the use of a scribing key with a reduced footprint to measure the overlay accuracy between the current layer and any other layers.
  • the engraved key according to an embodiment of the present disclosure is less affected by the accuracy of the lithographic apparatus relative to the scheme in which the engraved key with the scale scale is used, since it is not necessary to make a scale ruler on the engraved key .
  • a substrate as described herein may refer to a display substrate. That is, the scribe key described in the above embodiments may be formed in the display substrate for monitoring the manufacturing process of the display substrate. In some embodiments, the engraved key can be located in a non-display area of the display substrate. Further, the display substrate can be assembled into a display panel.
  • the display panel can be: electronic paper, mobile phone, tablet computer, television, display, notebook computer, digital photo frame, navigator and the like with any display product or component.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)

Abstract

一种套刻键标、形成套刻键标的方法和测量套刻精度的方法，套刻键标包括：至少两个套刻标记（201，201'；202，202'；203，203'），每个套刻标记（201，201'；202，202'；203，203'）具有彼此中心对称的第一子标记（201，202，203）和第二子标记（201'，202'，203'），第一子标记（201，202，203）和第二子标记（201'，202'，203'）中的每一个包括两个相互垂直且具有公共端的条状图形；套刻标记（201，201'；202，202'；203，203'）中至少有两个位于不同层。采用这种套刻键标，可以缓解或减轻套刻键标对于较大基板面积的需求，以及可以测量不同层之间的套刻精度。

Description

套刻键标、形成套刻键标的方法和测量套刻精度的方法 技术领域
本公开涉及光刻技术领域，具体而言涉及一种套刻键标、形成套刻键标的方法和测量套刻精度的方法。
背景技术
光刻(photolithography)是通过对准、曝光和显影等步骤将掩模上的图形转移到基板上的工艺。在多个层的情况下，确保不同层的图形彼此对准非常重要。套刻(overlay)偏差是指例如由于掩模未对准而引起的不同层的图形之间的位置偏差。
图1A和1B是现有技术中测量不同层之间的套刻精度所使用的套刻键标的平面图。如图1A所示，在第一层中形成作为矩形框的多个标记201(作为示例，仅示出了三个套刻标记2011、2012和2013)。然后，如图1B所示，在第一层上方形成后续层时，依次在对应的层中形成被示出为黑色方块的标记2021、2022和2023。具体地，在第二层中形成标记2021，在第三层中形成标记2022，并且在第四层中形成标记2023。标记2021、2022和2023分别位于矩形框2011、2012和2013的内部。在测量套刻精度时，可以在预先建立的坐标系中确定各个黑色方块的中心点坐标和各个矩形框的中心点坐标。通过计算一个黑色方块的中心点坐标与对应的矩形框的中心点坐标之间的差值，可以测量该黑色方块所对应的层与第一层之间的套刻精度。
然而，这样的现有技术套刻键标的一个问题在于：1)多个矩形框占用的面积较大，浪费了基板的空间；并且2)不能直接测量除第一层之外的任意两层之间的套刻精度。
因此，需要一种改进的套刻键标、形成套刻键标的方法和测量套刻精度的方法。
发明内容
有利的是提供一种套刻键标，其可以缓解或减轻套刻键标对于较大基板面积的需求。进一步地，所述套刻键标可以用于测量不同层(无论是最低层与较高层，还是两个不同的较高层)之间的套刻精度。同 样有利的是提供一种形成套刻键标的方法和测量套刻精度的方法。
根据本公开的第一方面，提供了一种套刻键标，包括：至少两个套刻标记，每个所述套刻标记具有彼此中心对称的第一子标记和第二子标记。第一子标记和第二子标记中的每一个包括两个相互垂直且具有公共端的条状图形，并且所述套刻标记中至少有两个位于不同层。
在一些实施例中，所述套刻标记的第一子标记依次排列以形成第一阶梯式图形，并且所述套刻标记的第二子标记依次排列以形成第二阶梯式图形。
在一些实施例中，所述第一阶梯式图形与所述第二阶梯式图形彼此不重叠。
在一些实施例中，所述至少两个套刻标记中的一个被布置为使得其第一子标记和第二子标记在它们的对称中心处相连接。
在一些实施例中，所述至少两个套刻标记的第一子标记在远离所述对称中心的第一方向上依次排列，并且所述至少两个套刻标记的第二子标记在与所述第一方向相反的方向上依次排列。
在一些实施例中，所述两个条状图形具有相同的长度。
根据本公开的另一方面，提供了显示基板，包括如上所述的套刻键标。该套刻键标可以位于显示基板的非显示区。还提供了一种显示面板，包括如上所述的显示基板。
根据本公开的另一方面，提供了一种形成套刻键标的方法，包括：形成至少两个套刻标记，每个所述套刻标记具有彼此中心对称的第一子标记和第二子标记。第一子标记和第二子标记中的每一个包括两个相互垂直且具有公共端的条状图形，并且所述套刻标记中至少有两个位于不同层。
在一些实施例中，所述套刻标记的第一子标记依次排列以形成第一阶梯式图形，并且所述套刻标记的第二子标记依次排列以形成第二阶梯式图形。
在一些实施例中，所述第一阶梯式图形与所述第二阶梯式图形彼此不重叠。
在一些实施例中，所述至少两个套刻标记中的一个被布置为使得其第一子标记和第二子标记在它们的对称中心处相连接。
在一些实施例中，所述至少两个套刻标记的第一子标记在远离所 述对称中心的第一方向上依次排列，并且所述至少两个套刻标记的第二子标记在与所述第一方向相反的方向上依次排列。
在一些实施例中，所述两个条状图形具有相同的长度。
根据本公开的另一个方面，提供了一种测量套刻精度的方法，包括：获取至少两个套刻标记的图像，每个所述套刻标记具有彼此中心对称的第一子标记和第二子标记。第一子标记和第二子标记中的每一个包括两个相互垂直且具有公共端的条状图形，并且所述套刻标记中至少有两个位于不同层。所述方法还包括：基于所述图像中所述至少两个套刻标记的位置信息测量所述不同层之间的套刻精度。
在一些实施例中，测量所述套刻精度包括：在所述图像中确定位于不同层的两个套刻标记各自的第一子标记和第二子标记的对称中心；确定所确定的对称中心之间的位置偏差；以及基于所述位置偏差测量所述不同层之间的套刻精度。
在一些实施例中，所述套刻标记的第一子标记依次排列以形成第一阶梯式图形，并且所述套刻标记的第二子标记依次排列以形成第二阶梯式图形。测量所述套刻精度包括：基于所述图像中所述第一阶梯式图形中的两个相邻第一子标记或所述第二阶梯式图形中的两个相邻第二子标记之间的重叠，确定所述两个相邻第一子标记或所述两个相邻第二子标记所在的两个层之间存在套刻偏差。
根据在下文中所描述的附图和实施例，本公开的这些和其它方面将是清楚明白的，并且将参考在下文中所描述的实施例而被阐明。
附图说明
图1A和1B是现有技术中测量不同层之间的套刻精度所使用的套刻键标的平面图；
图2是根据本公开一个实施例的套刻键标的平面图；
图3是图2中所示的套刻键标的平面图，其中一个套刻标记在x方向和y方向上发生偏移；
图4是根据本公开一个实施例的套刻键标的变型的平面图；
图5是图示出根据本公开一个实施例的形成套刻键标的方法的流程图；
图6是根据本公开一个实施例的套刻键标的剖面图；并且
图7是图示出根据本公开一个实施例的测量套刻精度的方法的流程图。
具体实施方式
以下结合附图对本公开的各实施例进行详细描述。
将理解的是，尽管术语第一、第二、第三等等在本文中可以用来描述各种元件、部件、区、层和/或部分，但是这些元件、部件、区、层和/或部分不应当由这些术语限制。这些术语仅用来将一个元件、部件、区、层或部分与另一个区、层或部分相区分。因此，下面讨论的第一元件、部件、区、层或部分可以被称为第二元件、部件、区、层或部分而不偏离本公开的教导。
诸如“在...下面”、“在...之下”、“较低”、“在...下方”、“在...上方”、“较高”等等之类的空间相对术语在本文中可以为了便于描述而用来描述如图中所图示的一个元件或特征与另一个(些)元件或特征的关系。将理解的是，这些空间相对术语意图涵盖除了图中描绘的取向之外在使用或操作中的器件的不同取向。例如，如果翻转图中的器件，那么被描述为“在其他元件或特征之下”或“在其他元件或特征下面”或“在其他元件或特征下方”的元件将取向为“在其他元件或特征上方”。因此，示例性术语“在...之下”和“在...下方”可以涵盖在...上方和在...之下的取向两者。另外，还将理解的是，当层被称为“在两个层之间”时，其可以是在该两个层之间的唯一的层，或者也可以存在一个或多个中间层。
本文中使用的术语仅出于描述特定实施例的目的并且不意图限制本公开。如本文中使用的，单数形式“一个”、“一”和“该”意图也包括复数形式，除非上下文清楚地另有指示。将进一步理解的是，术语“包括”和/或“包含”当在本说明书中使用时指定所述及特征、整体、步骤、操作、元件和/或部件的存在，但不排除一个或多个其他特征、整体、步骤、操作、元件、部件和/或其群组的存在或添加一个或多个其他特征、整体、步骤、操作、元件、部件和/或其群组。如本文中使用的，术语“和/或”包括相关联的列出项目中的一个或多个的任意和全部组合。
将理解的是，当元件或层被称为“在另一个元件或层上”、“连接 到另一个元件或层”、“耦合到另一个元件或层”或“邻近另一个元件或层”时，其可以直接在另一个元件或层上、直接连接到另一个元件或层、直接耦合到另一个元件或层或者直接邻近另一个元件或层，或者可以存在中间元件或层。相反，当元件被称为“直接在另一个元件或层上”、“直接连接到另一个元件或层”、“直接耦合到另一个元件或层”、“直接邻近另一个元件或层”时，没有中间元件或层存在。然而，在任何情况下“在...上”或“直接在...上”都不应当被解释为要求一个层完全覆盖下面的层。
本文中参考本公开的理想化实施例的示意性图示(以及中间结构)描述本公开的实施例。正因为如此，应预期例如作为制造技术和/或公差的结果而对于图示形状的变化。因此，本公开的实施例不应当被解释为限于本文中图示的区的特定形状，而应包括例如由于制造导致的形状偏差。因此，图中图示的区本质上是示意性的，并且其形状不意图图示器件的区的实际形状并且不意图限制本公开的范围。
除非另有定义，本文中使用的所有术语(包括技术术语和科学术语)具有与本公开所属领域的普通技术人员所通常理解的相同含义。将进一步理解的是，诸如那些在通常使用的字典中定义的之类的术语应当被解释为具有与其在相关领域和/或本说明书上下文中的含义相一致的含义，并且将不在理想化或过于正式的意义上进行解释，除非本文中明确地如此定义。
图2是根据本公开一个实施例的套刻键标的平面图。该套刻键标包括至少两个套刻标记。在图2所示的示例中，该套刻键标包括第一套刻标记201，201′、第二套刻标记202，202′和第三套刻标记203，203′。第一套刻标记201，201′具有彼此中心对称的第一子标记201和第二子标记201′。第二套刻标记202，202′具有彼此中心对称的第一子标记202和第二子标记202′。第三套刻标记203，203′具有彼此中心对称的第一子标记203和第二子标记203′。
所述套刻标记中至少有两个位于不同层。在该示例中，第一套刻标记201，201′可以形成在较低层中，并且第二套刻标记202，202′和第三套刻标记203，203′可以形成在所述较低层上方的较高层中。具体地，第一套刻标记201，201′可以形成在基板上的第一层，第二套刻标记202，202′可以形成在第一层上方的第二层，并且第二套刻标记203，203′可以 形成在第二层上方的第三层。然而，其他实施例也是可能的。例如，第二套刻标记202，202′和第三套刻标记203，203′可以形成同一层中。
如所示的，各第一子标记201，202，203和第二子标记201′，202′，203′中的每个包括两个相互垂直的条状图形。这两个条状图形具有公共端。在一些实施例中，当从上方看时，各第一子标记201，202，203可以依次排列以形成第一阶梯式图形，并且各第二子标记201′，202′，203′可以依次排列以形成第二阶梯式图形。在其他实施例中，第一子标记和第二子标记可以排列成其他图形。
图2所示的套刻键标可以被认为是在第一层、第二层和第三层精确地对准的情况下形成的。在这种情况下，在第一阶梯式图形中，各第一子标记201，202，203首尾相接，形成连续的图形。同样地，在第二阶梯式图形中，各第二子标记201′，202′，203′首尾相接，形成连续的图形。
图3是图2中所示的套刻键标的平面图，其中一个套刻标记在x方向和y方向上发生偏移。在该图中，第二套刻标记202，203′在x方向和y方向上发生偏移，而第一套刻标记201，201′以及第二套刻标记203，203′保持在与图2中相同的位置。应当注意的是，图3中的坐标系是为了便于描述偏移方向而示出的，而不是根据本公开的实施例所要求的(稍后讨论)。
在该示例中，偏移的第一子标记202(对应于第二层)与相邻的第一子标记201(对应于第一层)部分地重叠，而与相邻的另一个第一子标记203(对应于第三层)断开。类似地，偏移的第二子标记202′(对应于第二层)与相邻的第二子标记203′(对应于第三层)部分地重叠，而与相邻的另一个第二子标记201′(对应于第一层)断开。与图2中所示的连续的阶梯式图形相比，图3中所示的阶梯式图形中存在的重叠和断开是很容易被察觉的。因此，可以通过判断阶梯式图形中是否存在重叠(或断开)而定性地判断不同层之间是否存在套刻偏差。这可以在定量地测量套刻精度之前进行。
为此目的，有利的是，各第一子标记所形成的第一阶梯式图形与各第二子标记所形成的第二阶梯式图形彼此不重叠。在这种情况下，相邻的第一子标记或相邻的第二子标记之间的重叠不会受第一和第二阶梯式图形之间否则存在的重叠干扰，因而可以被更容易地观察到。 这可以提高定性判断结果的可靠性。
另外，各第一子标记和第二子标记中的每个的两个条状图形可以具有相同的长度。这可以在x方向和y方向上提供相同的重叠分辨能力。当然，其他的实施例是可能的。例如，这两个条状图形可以具有不同的长度，或者不同子标记的条状图形的长度可以不同。
在定量测量的情况下，可以基于第一套刻标记201，201′、第二套刻标记202，202′和第三套刻标记203，203′的位置信息测量不同层之间的套刻精度。具体地，可以确定位于不同层的两个套刻标记各自的第一子标记和第二子标记的对称中心，然后基于所确定的两个对称中心之间的位置偏差来测量不同层之间的套刻精度。
在图2所示的示例中，第一层、第二层和第三层精确地对准，使得第一套刻标记201，201′的对称中心O1、第二套刻标记202，202′的对称中心O2以及第三套刻标记203，203′的对称中心O3相互重合(O1、O2和O3均未示出)。在图3所示的示例中，第一套刻标记201，201′的对称中心O1与第三套刻标记203，203′的对称中心O3在位置上保持不变(被示出为O1，3)，而第二套刻标记202，202′的对称中心O2发生偏移。如前所述，通过确定对称中心O1与对称中心O2之间的偏差可以测量第一层与第二层之间的套刻精度，并且通过确定对称中心O2与对称中心O3之间的偏差可以测量第二层与第三层之间的套刻精度。
在一个示例中，配对的第一子标记和第二子标记的对称中心可以通过例如以下方式确定：用假想线(如图3中的虚线所示)延长配对的第一子标记和第二子标记各自的两个条状图形，使得假想线连同所述条状图形形成一个矩形；确定该矩形的中心点作为对称中心。当然，在其他实施例中，可以采用其他方法。
图4是根据本公开一个实施例的套刻键标的变型的平面图。如图4所示，第一套刻标记201，201′被布置为使得第一子标记201和第二子标记201′在它们的对称中心处相连接。这样，第一子标记201和第二子标记201′之间的距离被最小化(为零)。这可以潜在地减小套刻键标的占用面积。
进一步地，在该示例中，各第一子标记201，202，203在远离该对称中心的第一方向上依次排列。所述第一方向可以例如是基板的横向或纵向。各第二子标记201′，202′，203′在与所述第一方向相反的方向上 依次排列。这允许所有的第一子标记和第二子标记基本上沿着一条轨迹分布，使得在发生套刻偏差的情况下相邻的子标记之间的重叠变得更易于识别。因此，这样的布置兼顾了减小的基板占用面积和增强的套刻偏差分辨能力。
应当注意，本文中所述的阶梯式图形可以是指两个或更多子标记通过平移或旋转而依次排列所形成的图形，所述子标记中的每一个包括两个相互垂直且具有公共端的条状图形。在一些实施例中，在理想情况下(例如，当各层精确地对准时)，各个子标记首尾相接以形成连续的图形，并且彼此直接相邻的条状图形相互垂直。因此，虽然图2-4中示出了三个不同的阶梯式图形，但是本公开不限于此。在其他实施例中，其他阶梯式图形也是可能的。
图5是图示出根据本公开一个实施例的形成套刻键标的方法的流程图。在步骤510处，对较低层构图以形成第一套刻标记。第一套刻标记的实例是如上文描述的第一套刻标记201，201′。在一个示例中，该较低层可以形成在基板上，也即，该较低层是基板上的第一个层。然而本公开不限于此。在其他示例中，该较低层可以是布置在两个层之间的中间层。在步骤520处，对所述较低层上方的较高层构图以形成第二套刻标记。第二套刻标记的实例是如上文描述的第二套刻标记202，202′。在步骤530处，对另一较高层构图以形成第三套刻标记。第三套刻标记的实例是如上文描述的第三套刻标记203，203′。
图6是使用图5所示的方法形成的套刻键标的剖面图。如图6所示，在基板601上形成作为较低层的第一层。该第一层被构图而形成第一套刻标记201，201′。第一层上涂覆有中间绝缘体层602。在中间绝缘体层602上形成作为较高层的第二层。该第二层被构图而形成第二套刻标记202，202′。第二层上涂覆有中间绝缘体层603。在中间绝缘体层603上形成作为另一个较高层的第三层。该第三层被构图而形成另一个第三套刻标记203，203′。在该示例中，第一套刻标记201，201′、第二套刻标记202，202′和第三套刻标记203，203′以图4所示的图形布置在不同的层中。应当注意的是，如本文中使用的“较低层”和“较高层”可以是指功能层，其中除套刻键标之外还可以被构图有功能元件，诸如例如电路图形。
图7是图示出根据本公开一个实施例的测量套刻精度的方法的流 程图。在步骤710处，获取至少两个套刻标记的图像。在该实施例中，所述套刻标记中至少有两个位于不同层。套刻标记的实例可以是如上文描述的第一套刻标记201，201′、第二套刻标记202，202′和第三套刻标记203，203′。可以通过测量设备(例如，光学显微镜)获取套刻键标的图像。该图像可以被提供以用于分析。在步骤720处，基于所述图像中所述至少两个套刻标记的位置信息测量不同层之间的套刻精度。
返回参考图3，在一个示例中，可以在图像中确定第二套刻标记的第一子标记202和第二子标记202′的对称中心O2以及第三套刻标记的第一子标记203和第二子标记203′的对称中心O3。对称中心的确定可以采用如上文参考图3所描述的方法执行。然后，确定两个对称中心O2和O3之间的位置偏差。基于所述位置偏差可以测量第二层与第三层之间的套刻精度。
另外，可以在图像中确定第一套刻标记的第一子标记201和第二子标记201′的对称中心O1以及第二套刻标记的第一子标记202和第二子标记202′的对称中心O2。对称中心的确定可以采用如上文参考图3所描述的方法执行。然后，确定两个对称中心O1和O2之间的位置偏差。基于所述位置偏差可以测量第一层与第二层之间的套刻精度。
应当注意的是，在上面的测量过程中，需要得到的是两个对称中心之间的位置偏差(即，相对位置信息)，而非绝对位置信息(例如，坐标)。也就是说，在本公开的实施例中可以不需要预先建立的坐标系。这可以避免由于坐标系的引入而导致的问题，例如测量过程易受光刻设备本身的精度的影响。
继续图3的示例，还可以进行套刻精度的定性判断。具体地，可以基于图像中第一阶梯式图形中的两个相邻的第一子标记201和202(或第二阶梯式图形中的两个相邻的第二子标记203′和202′)之间的重叠，确定第一子标记201和202所对应的第一层与第二层(或第二子标记203′和202′所对应的第三层与第二层)之间存在套刻偏差。应当理解的是，相邻的第一子标记或相邻的第二子标记之间的断开也可以用于套刻精度的定性判断。
有利的是，本公开的实施例使得能够利用具有减小的占用面积的套刻键标测量当前层与其他任意层之间的套刻精度。在一些实施例中， 在定量测量之前可以定性判断是否存在套刻偏差。此外，相对于其中使用带有刻度标尺的套刻键标的方案，根据本公开实施例的套刻键标也较少受光刻设备的精度影响，因为不需要在套刻键标上制作刻度标尺。
另外，作为示例而非限制，本文中所述的基板可以是指显示基板。也即，上文实施例中所述的套刻键标可以形成在显示基板中，以用于对显示基板的制作工艺进行监控。在一些实施例中，套刻键标可以位于显示基板的非显示区。进一步地，显示基板可以被组装成显示面板。显示面板可以为：电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
虽然前面的讨论包含若干特定的实现细节，但是这些不应解释为对任何发明或者可能要求保护的范围的限制，而应解释为对可能仅限于特定发明的特定实施例的特征的描述。在本说明书中不同的实施例中描述的特定特征也可以在单个实施例中以组合形式实现。与此相反，在单个实施例中描述的不同特征也可以在多个实施例中分别地或者以任何适当的子组合形式实现。此外，尽管前面可能将特征描述为以特定组合起作用，甚至最初也被如此要求保护，但是来自所要求保护的组合中的一个或多个特征在某些情况下也可以从该组合中排除，并且该要求保护的组合可以被导向子组合或子组合的变型。
类似地，虽然各个操作在附图中被描绘为按照特定的顺序，但是这不应理解为要求这些操作必须以所示的特定顺序或者按顺行次序执行，也不应理解为要求必须执行所有示出的操作以获得期望的结果。
因此，应当理解，本公开的实施例并不限于所公开的特定实施例，并且修改和其他的实施例也意图被包含在所附权利要求书的范围内。尽管此处使用了特定术语，但是它们仅在通用和描述性意义上使用，而非为了限制的目的。

Claims (18)

  1. 一种套刻键标，包括：
    至少两个套刻标记，每个所述套刻标记具有彼此中心对称的第一子标记和第二子标记，第一子标记和第二子标记中的每一个包括两个相互垂直且具有公共端的条状图形，
    其中，所述套刻标记中至少有两个位于不同层。
  2. 如权利要求1所述的套刻键标，其中，所述套刻标记的第一子标记依次排列以形成第一阶梯式图形，并且所述套刻标记的第二子标记依次排列以形成第二阶梯式图形。
  3. 如权利要求2所述的套刻键标，其中，所述第一阶梯式图形与所述第二阶梯式图形彼此不重叠。
  4. 如权利要求1所述的套刻键标，其中，所述至少两个套刻标记中的一个被布置为使得其第一子标记和第二子标记在它们的对称中心处相连接。
  5. 如权利要求4所述的套刻键标，其中，所述至少两个套刻标记的第一子标记在远离所述对称中心的第一方向上依次排列，并且所述至少两个套刻标记的第二子标记在与所述第一方向相反的方向上依次排列。
  6. 如权利要求1-5中任一项所述的套刻键标，其中，所述两个条状图形具有相同的长度。
  7. 一种显示基板，包括：权利要求1-6任一项所述的套刻键标。
  8. 如权利要求7所述的显示基板，其中，所述套刻键标位于所述显示基板的非显示区。
  9. 一种显示面板，包括：如权利要求7或8所述的显示基板。
  10. 一种形成套刻键标的方法，包括：
    形成至少两个套刻标记，每个所述套刻标记具有彼此中心对称的第一子标记和第二子标记，其中，第一子标记和第二子标记中的每一个包括两个相互垂直且具有公共端的条状图形，并且所述套刻标记中至少有两个位于不同层。
  11. 如权利要求10所述的方法，其中，所述套刻标记的第一子标记依次排列以形成第一阶梯式图形，并且所述套刻标记的第二子标记 依次排列以形成第二阶梯式图形。
  12. 如权利要求11所述的方法，其中，所述第一阶梯式图形与所述第二阶梯式图形彼此不重叠。
  13. 如权利要求10所述的方法，其中，所述至少两个套刻标记中的一个被布置为使得其第一子标记和第二子标记在它们的对称中心处相连接。
  14. 如权利要求13所述的方法，其中，所述至少两个套刻标记的第一子标记在远离所述对称中心的第一方向上依次排列，并且所述至少两个套刻标记的第二子标记在与所述第一方向相反的方向上依次排列。
  15. 如权利要求10-14中任一项所述的方法，其中，所述两个条状图形具有相同的长度。
  16. 一种测量套刻精度的方法，包括：
    获取至少两个套刻标记的图像，每个所述套刻标记具有彼此中心对称的第一子标记和第二子标记，其中，第一子标记和第二子标记中的每一个包括两个相互垂直且具有公共端的条状图形，并且所述套刻标记中至少有两个位于不同层；以及
    基于所述图像中所述至少两个套刻标记的位置信息测量所述不同层之间的套刻精度。
  17. 如权利要求16所述的方法，其中，测量所述套刻精度包括：
    在所述图像中确定位于不同层的两个套刻标记各自的第一子标记和第二子标记的对称中心；
    确定所确定的对称中心之间的位置偏差；以及
    基于所述位置偏差测量所述不同层之间的套刻精度。
  18. 如权利要求16所述的方法，其中所述套刻标记的第一子标记依次排列以形成第一阶梯式图形，其中所述套刻标记的第二子标记依次排列以形成第二阶梯式图形，并且其中，测量所述套刻精度包括：
    基于所述图像中所述第一阶梯式图形中的两个相邻第一子标记或所述第二阶梯式图形中的两个相邻第二子标记之间的重叠，确定所述两个相邻第一子标记或所述两个相邻第二子标记所在的两个层之间存在套刻偏差。
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