[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2017034356A1 - Dispositif électroluminescent et conditionnement de dispositif électroluminescent le comprenant - Google Patents

Dispositif électroluminescent et conditionnement de dispositif électroluminescent le comprenant Download PDF

Info

Publication number
WO2017034356A1
WO2017034356A1 PCT/KR2016/009469 KR2016009469W WO2017034356A1 WO 2017034356 A1 WO2017034356 A1 WO 2017034356A1 KR 2016009469 W KR2016009469 W KR 2016009469W WO 2017034356 A1 WO2017034356 A1 WO 2017034356A1
Authority
WO
WIPO (PCT)
Prior art keywords
recess
layer
light emitting
conductive semiconductor
semiconductor layer
Prior art date
Application number
PCT/KR2016/009469
Other languages
English (en)
Korean (ko)
Inventor
박수익
김민성
성연준
이용경
최광용
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160097384A external-priority patent/KR102554702B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to CN201680059835.1A priority Critical patent/CN108352429B/zh
Priority to JP2018510835A priority patent/JP7148131B2/ja
Priority to US15/754,639 priority patent/US10490702B2/en
Priority to EP16839644.8A priority patent/EP3343647B1/fr
Publication of WO2017034356A1 publication Critical patent/WO2017034356A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Definitions

  • the embodiment relates to a light emitting device.
  • Group 3-5 compound semiconductors such as GaN and AlGaN, are widely used for optoelectronics and electronic devices due to many advantages, such as having a wide and easy to adjust band gap energy.
  • light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or Group 2-6 compound semiconductor materials are developed using thin film growth technology and device materials, such as red, green, blue and ultraviolet light.
  • Various colors can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent life, fast response speed, safety and environment compared to conventional light sources such as fluorescent and incandescent lamps can be realized. Has the advantage of affinity.
  • a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device.
  • CCFL Cold Cathode Fluorescence Lamp
  • LCD liquid crystal display
  • the light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and a first electrode and a second electrode on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. Is placed.
  • the light emitting device emits light having energy determined by an energy band inherent in a material in which an electron injected through a first conductive semiconductor layer and a hole injected through a second conductive semiconductor layer meet each other to form an active layer.
  • the light emitted from the active layer may vary depending on the composition of the material forming the active layer, and may be blue light, ultraviolet (UV), deep ultraviolet (Deep UV), or the like.
  • FIG. 1 is a view showing a conventional light emitting device.
  • FIG. 1 illustrates a light emitting structure 10 including a first conductive semiconductor layer 12, an active layer 14, and a second conductive semiconductor layer 16 on a second electrode 16.
  • the first electrode 13 is disposed on the first conductive semiconductor layer 12.
  • the light emitting device of the embodiment is to solve the problem to provide a light emitting device having a higher light extraction efficiency.
  • the light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, A light emitting structure including a first recess and a second recess penetrating through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; A connection electrode disposed in the first recess and electrically connected to the first conductive semiconductor layer; A reflective layer disposed inside the second recess; And an insulating layer electrically insulating the reflective layer and the light emitting structure.
  • the active layer may generate light in the ultraviolet wavelength range.
  • the reflective layer may reflect light in the ultraviolet wavelength band.
  • the first recess may include a first-first recess and a second-second recess, and the second recess may be disposed between the first-first recess and the first-second recess.
  • connection electrodes may be plural and include a first conductive layer electrically connected to the plurality of connection electrodes.
  • the display device may include a first electrode disposed between the connection electrode and the first conductive semiconductor layer.
  • the second recess may include a second-first recess surrounding the first-first recess and a second-second recess surrounding the first-second recess, and the light emitting structure may include the first-first recess. It may include a first light emitting region formed by one recess and the second-first recess, and a second light emitting region constituted by the 1-2 recess and the second-2 recess.
  • the first light emitting region and the second light emitting region each include the first conductive semiconductor layer, the second conductive semiconductor layer, and the active layer, and the second conductive region of the first light emitting region and the second light emitting region.
  • the type semiconductor layer and the active layer may be separated by the second recess.
  • the second-first recess and the second-second recess may be connected to each other.
  • the second-first recess and the second-second recess may be spaced apart from each other.
  • the first recess may have a polygonal shape or a circular shape on a plane.
  • the protrusion height of the second recess is the same as or higher than the protrusion height of the first recess, and the protrusion height of the first and second recesses is an upper surface of the first and second recesses in the active layer. It may be a distance to.
  • the plurality of first and second recesses may extend in a first direction, and the first direction may be a direction perpendicular to a thickness direction of the light emitting structure.
  • the first direction length of the second recess may be longer than the first direction length of at least one of the neighboring first recesses.
  • the insulating layer may include a first insulating layer and a second insulating layer, and the reflective layer may be disposed between the first insulating layer and the second insulating layer.
  • a second conductive layer disposed under the second conductive semiconductor layer; And a first conductive layer disposed below the second conductive layer with the second insulating layer interposed therebetween.
  • the first conductive layer may be connected to the connection electrode.
  • a light emitting device package according to an embodiment of the present invention, the body including at least one pad; And a light emitting device disposed on the body and electrically connected to the pad, wherein the light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer, the first conductive semiconductor layer, and the first conductive layer.
  • a first recess and a second recess including an active layer disposed between the two conductive semiconductor layers, and passing through the second conductive semiconductor layer and the active layer to a partial region of the first conductive semiconductor layer.
  • Light emitting structure comprising; A connection electrode disposed in the first recess and electrically connected to the first conductive semiconductor layer; A reflective layer disposed inside the second recess; And an insulating layer electrically insulating the reflective layer and the light emitting structure.
  • light extraction efficiency may be improved.
  • the light output can be improved.
  • the operating voltage can be improved.
  • FIG. 1 is a view showing a conventional light emitting device
  • FIG. 2 is a view showing a first embodiment of a light emitting device
  • FIG. 3 is a view showing a second embodiment of a light emitting device
  • FIG. 4 is a view showing a third embodiment of a light emitting device
  • FIG. 5 is a view showing a fourth embodiment of a light emitting device
  • FIG. 6 is a view showing an embodiment of a light emitting device package
  • FIG. 7 is a cross-sectional view of a light emitting device according to a fifth embodiment of the present invention.
  • FIG. 8 is a conceptual diagram illustrating a process in which light is upwardly reflected by a reflective layer
  • FIG. 9 is an enlarged view of a portion A of FIG. 7;
  • FIG. 11 is a plan view of a light emitting device according to a seventh embodiment of the present invention.
  • FIG. 12 is a view showing a distribution of current densities of light emitting devices
  • FIG. 13A is an enlarged view of a portion B of FIG. 11;
  • FIG. 13B is a first modification of FIG. 13A.
  • FIG. 16 is a plan view of a light emitting device according to an eighth embodiment of the present invention.
  • FIG. 17 is an enlarged view of a portion C of FIG. 16,
  • FIG. 19 is a plan view of a light emitting device according to a ninth embodiment of the present invention.
  • 20A and 20B are views illustrating a light emitting device according to a tenth embodiment of the present invention.
  • 21 is a view showing a light emitting device according to an eleventh embodiment of the present invention.
  • FIG. 22 is a view showing a light emitting device according to a twelfth embodiment of the present invention.
  • the (up) or down (on) or under) when described as being formed on the "on or under” of each element, the (up) or down (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements.
  • the (on) or “under” when expressed as “on” or “under”, it may include the meaning of the downward direction as well as the upward direction based on one element.
  • the light emitting device may be a vertical light emitting device, and a first electrode for supplying current to the first conductive semiconductor layer may be disposed under the light emitting structure to reduce a reflection amount of light emitted to the top of the light emitting structure.
  • the first electrode may be electrically connected to the first conductive semiconductor layer through the second conductive semiconductor layer and the active layer.
  • FIG. 2 is a view showing a first embodiment of a light emitting device.
  • the second conductive layer 236 is disposed under the light emitting structure 120, and the insulating layer 130 and the first conductive layer 232 are disposed under the second electrode.
  • the connection electrode 233 extending from the first conductive layer 232 may be in electrical contact with the first conductive semiconductor layer 222 in the light emitting structure 120.
  • second electrode pads 236a and 236b may be disposed to correspond to edges of the light emitting structure 120 in the edge region of the second conductive layer 236.
  • the light emitting structure 120 includes a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126.
  • the first conductive semiconductor layer 122 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and may be doped with the first conductive dopant.
  • the first conductive semiconductor layer 122 is a semiconductor material having Al x In y Ga (1-xy) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1), and AlGaN.
  • GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.
  • the first conductive dopant may include an n-type dopant such as Si, Ge, Sn, Se, Te, or the like.
  • the first conductive semiconductor layer 122 may be formed as a single layer or a multilayer, but is not limited thereto.
  • the active layer 124 is disposed between the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126, and has a single well structure, a multi well structure, a single quantum well structure, and a multi quantum well structure.
  • a multi-quantum well (MQW) structure, a quantum dot structure or a quantum line structure may be included.
  • the active layer 124 is formed of a well layer and a barrier layer, for example AlGaN / AlGaN, InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs (InGaAs) using a compound semiconductor material of group III-V elements.
  • a barrier layer for example AlGaN / AlGaN, InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs (InGaAs) using a compound semiconductor material of group III-V elements.
  • / AlGaAs, GaP (InGaP) / AlGaP may be formed of any one or more pair structure, but is not limited thereto.
  • the well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.
  • the second conductive semiconductor layer 126 may be formed of a semiconductor compound.
  • the second conductive semiconductor layer 126 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and may be doped with a second conductive dopant.
  • a second conductivity type semiconductor material having the compositional formula of the semiconductor layer 126 is, for example, In x Al y Ga 1 -x- y N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1) , AlGaN, GaNAlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.
  • the second conductive dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.
  • the second conductive semiconductor layer 126 may be formed as a single layer or a multilayer, but is not limited thereto.
  • the second conductive semiconductor layer 126 is AlGaN
  • hole injection may not be smooth due to low electrical conductivity.
  • GaN having relatively high electrical conductivity may be disposed on the lower surface of the second conductive semiconductor layer 126.
  • an electron blocking layer may be disposed between the active layer 124 and the second conductive semiconductor layer 126.
  • the electron blocking layer may have a superlattice structure, for example, AlGaN doped with a second conductivity type dopant may be disposed, and GaN having a different composition ratio of aluminum may be formed as a layer. It may be arranged alternately with each other.
  • the surface of the first conductive semiconductor layer 122 may have irregularities to improve light extraction efficiency.
  • the second conductive layer 236 may be disposed under the second conductive semiconductor layer 126.
  • the second conductive layer 236 is disposed in surface contact with the second conductive semiconductor layer 126, but may not be the area where the connection electrode 233 is formed.
  • an edge of the second conductive layer 236 may be disposed outside the edge of the second conductive semiconductor layer 126 to secure an area in which the second electrode pads 236a and 236b are to be disposed. For sake.
  • the second conductive layer 236 may be made of a conductive material, and in detail, may be made of a metal, and more specifically, silver (Ag), aluminum (Al), titanium (Ti), chromium (Cr), and nickel ( Ni), copper (Cu), and gold (Au) may be formed to have a single layer or a multilayer structure.
  • the second conductive layer may be a concept including a capping layer and a p-ohmic electrode.
  • the passivation layer 180 may be formed around the light emitting structure 120.
  • the passivation layer 180 may be made of an insulating material, and the insulating material may be made of an oxide or nitride which is non-conductive.
  • the passivation layer 180 may be formed of a silicon oxide (SiO 2 ) layer, an oxynitride layer, and an aluminum oxide layer.
  • the passivation layer 180 may also be disposed on the circumference of the light emitting structure 120 and on the edge of the second conductive layer 236 disposed outside the edge of the second conductive semiconductor layer 126. have.
  • the passivation layer 180 disposed on the edge of the second conductive layer 236 may be open in a region where the second electrode pads 236a and 236b are formed.
  • a first conductive layer (first conductive layer 232) may be disposed below the second conductive layer 236 with the insulating layer 130 interposed therebetween.
  • the first conductive layer 232 may be made of a conductive material, and in detail, may be made of a metal, and more specifically, silver (Ag), aluminum (Al), titanium (Ti), chromium (Cr), and nickel ( Ni), copper (Cu), and gold (Au) may be formed to have a single layer or a multilayer structure.
  • connection electrodes 233 are disposed extending upward from the first conductive layer 232, and the connection electrodes 233 are the insulating layer 130, the second conductive layer 236, and the second conductive semiconductor layer ( 126 and the active layer 124 and extend to a portion of the first conductive semiconductor layer 122, so that the top surface of the connection electrode 233 may be in surface contact with the first conductive semiconductor layer 122.
  • the light emitting structure 229 may include a plurality of recesses 128 in which a plurality of connection electrodes 233 are disposed.
  • connection electrode 233 may be defined as an area from the same height as the bottom surface of the second conductive semiconductor layer 126 to the top surface of the recess 128 in the recess 128.
  • the region of 128 and the region of the connection electrode 233 defined may be the same.
  • the connection electrode 233 may be electrically connected to the first conductive layer 232 at the bottom surface of the recess 128.
  • each connection electrode 233 may be circular or polygonal.
  • the insulating layer 130 described above extends around the connection electrode 233 to connect the connection electrode 233 with the second conductive layer 236, the second conductive semiconductor layer 126, and the active layer 124. It can be electrically insulated.
  • An ohmic layer 240 may be disposed below the first conductive layer 232.
  • the ohmic layer 240 may be about 200 angstroms thick.
  • the ohmic layer 240 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • IZTO indium zinc tin oxide
  • IAZO indium aluminum zinc oxide
  • IGZO indium gallium zinc oxide
  • IGTO indium gallium tin oxide
  • a reflector 250 may be disposed below the ohmic layer to act as a reflective electrode.
  • the reflector 250 may include tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or Al or Ag, It may be made of a metal layer containing an alloy containing Pt or Rh. Aluminum, silver, and the like can effectively reflect the light traveling in the downward direction of FIG. 2 in the active layer 124 to greatly improve the light extraction efficiency of the light emitting device.
  • the width of the reflector 250 may be smaller than the width of the ohmic layer 240, and the channel layer 260 may be disposed under the reflector 250.
  • the width of the channel layer 260 may be greater than the width of the reflector 250 to surround the reflector 250.
  • the channel layer 260 may be made of a conductive material, for example, gold (Au) or tin (Sn).
  • the conductive support substrate 270 may be formed of a conductive material such as a metal or a semiconductor material.
  • a metal having excellent electrical conductivity or thermal conductivity may be used, and since it is necessary to sufficiently dissipate heat generated when the light emitting device is operated, it may be formed of a material having high thermal conductivity (eg, a metal).
  • a metal may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) or alloys thereof, and also gold (Au). ), Copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafers (e.g. GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga 2 O 3, etc.) And the like may optionally be included.
  • Mo molybdenum
  • Si silicon
  • Cu copper
  • Al aluminum
  • Au gold
  • the support substrate 270 may be 50 to 200 in order to have a mechanical strength sufficient to be separated into separate chips through a scribing process and a breaking process without causing warping of the entire nitride semiconductor. It can be made with a thickness of micrometers.
  • the bonding layer 236 combines the channel layer 260 and the conductive support substrate 270 with gold (Au), tin (Sn), indium (In), aluminum (Al), and silicon (Si). , Silver (Ag), nickel (Ni) and copper (Cu) can be formed of a material selected from the group consisting of or alloys thereof.
  • a current may be uniformly supplied to the entire area of the first conductive semiconductor layer 122 through the connection electrode 233 from the first conductive layer 236.
  • a current may be uniformly supplied to the second conductive semiconductor layer 126 which is in surface contact with the second conductive layer 236.
  • the electrode pads 236a and 236b may be disposed on the upper portion of the second conductive layer 236 around the light emitting structure 120, so that a current may be uniformly supplied to the entire area of the second conductive layer 236.
  • the frequency of bonding of the electrons injected through the first conductive semiconductor layer 122 and the holes injected through the second conductive semiconductor layer 126 in the active layer 124 increases, thereby increasing the frequency from the active layer 124.
  • the amount of light emitted may increase.
  • FIG 3 is a view showing a second embodiment of a light emitting device.
  • the light emitting device of the embodiment is basically the same as the structure of the light emitting device described with reference to FIG. 2, redundant descriptions thereof will be omitted.
  • the light emitting device of the embodiment may include a reflective layer 135 disposed on the connection electrode 233.
  • the reflective layer 135 may be provided between the insulating layer 130 and the first conductive layer 232.
  • the reflective layer 135 may be disposed under the insulating layer 130, and may be provided in the same shape as that of the insulating layer 130.
  • the light emitting device 200 may be a light emitting device emitting ultraviolet light.
  • the first conductive semiconductor layer 122 used in the light emitting device emitting ultraviolet light has a weak current spreading characteristic.
  • the light emitting device includes a reflective layer between the insulating layer 130 and the first conductive layer 232 disposed on the lower surface of the connection electrode 233 where most of the light emission occurs, and more specifically, on the connection electrode 233. 135) can be placed. Therefore, the light emitted mainly around the connection electrode 233 is reflected to prevent the emitted light from being absorbed by the first conductive layer 232, thereby increasing the light extraction efficiency.
  • FIG. 4 is a view showing a third embodiment of a light emitting device.
  • the light emitting device may further include a reflective layer 135 on the connection electrode 233.
  • the reflective layer 135 may be disposed between the insulating layers 130.
  • the insulating layer 130 may be disposed between the first insulating layer 131 disposed above and the second insulating layer disposed below the first insulating layer 131.
  • the layer 132 may be included, and the reflective layer 135 may be disposed between the first insulating layer 131 and the second insulating layer 132.
  • Materials constituting the first insulating layer 131 and the second insulating layer 132 may be provided in the same manner.
  • the materials constituting the first insulating layer 131 and the second insulating layer 132 may be formed of different materials.
  • the reflective layer 135 may be disposed on the bottom surface of the connection electrode 233 where most of the light emission occurs.
  • the reflective layer 135 is disposed between the insulating layer 130 disposed on the connection electrode 233 and the first conductive layer 232 to reflect light mainly emitted from the periphery of the connection electrode 233. You can. Therefore, the emitted light may be prevented from being absorbed by the first conductive layer 232, thereby increasing light extraction efficiency.
  • the light emitting device prevents light absorbed from the second insulating layer 132 and the first conductive layer 232 by being disposed between the first insulating layer 131 and the second insulating layer 132. Thereby increasing the light extraction efficiency.
  • the reflective layer 135 may be disposed in the first recess 128 where the connection electrode 233 is disposed. Therefore, as the number of the first recesses 128 increases, the contact area between the connection electrode 233 and the first conductive semiconductor layer 122 may increase, thereby improving current dispersion efficiency. In addition, the light emitted around the connection electrode 233 may be upwardly reflected by the reflective layer 135 to improve light extraction efficiency.
  • the thickness of the insulating layer 130 of the light emitting device illustrated in FIG. 3 may be provided to be greater than or equal to the thickness of the first insulating layer 131.
  • the thickness of the second insulating layer 132 of the embodiment may be provided to be greater than or equal to the thickness of the insulating layer 130 shown in FIG.
  • the thicknesses of the first insulating layer 131 and the second insulating layer 132 which provide a space for accommodating the reflective layer 135, are not limited to those shown in the embodiment, but may be changed as many as necessary. It does not limit the scope of the present invention.
  • FIG. 5 is a view showing a fourth embodiment of a light emitting device.
  • a reflective layer 135 for reflecting light emitted from the active layer 124 of the illustrated light emitting device is disposed on the connection electrode 233, whereas the light emitting device of the embodiment emits light from the active layer 124.
  • the reflective layer 135 for reflecting light may be included to be spaced apart from the connection electrode 233 by a predetermined interval. That is, the plurality of connection electrodes 233 may be disposed in the plurality of first recesses 128, respectively, and the reflective layer 135 may be disposed in the second recess 127. The second recess 127 may be disposed between the plurality of first recesses 128.
  • the light emitting device of the embodiment may be a light emitting device that emits ultraviolet rays.
  • light emitting devices for emitting ultraviolet rays extract light in a horizontal direction.
  • the light emitted from the light emitting device is moved in the horizontal direction in order to be extracted to the outside of the light emitting device, and most of the light is absorbed inside the light emitting device, thereby degrading light extraction efficiency.
  • the light emitting device may provide a light emitting device in which light moving in the horizontal direction is reflected by the reflective layer 135 and extracted upward.
  • the reflective layer 135 of the embodiment may be provided to protrude above a predetermined height from the insulating layer 130.
  • the active layer 124 is positioned on the insulating layer 130. Accordingly, the reflective layer 135 must be disposed at least at the same level as or higher than the active layer 124 to reflect the light traveling in the horizontal direction from the active layer 124 upward.
  • the first recess 128 in which the connection electrode 233 is disposed and the second recess 127 in which the reflective layer 135 are disposed may be disposed at the same level as or higher than the active layer 226.
  • the light emitting device is disposed on the plurality of first conductive protrusions 232A and the first conductive protrusions 232A disposed at positions spaced apart from the connection electrode 233 by a predetermined interval to insulate the first conductive protrusions 232A.
  • the insulating layer 130, and the reflective layer 135 disposed between the first conductive protrusion 232A and the insulating layer 130 to reflect light may be included.
  • the first conductive protrusion 232A may be provided to protrude at least higher than the active layer 124 to reflect light emitted from the active layer 124 and traveling in the horizontal direction.
  • first conductive protrusion 232A may be provided to protrude so that the connection electrode 233 has the same height as the height of the protrusion as shown in the drawing.
  • the first conductive protrusion 232A may be provided as long as the reflective layer 232A is provided to reflect the light emitted from the active layer 124 to increase light extraction efficiency.
  • protrusion height and width may be provided differently, which does not limit the scope of the present invention.
  • the reflective layer 135 may be disposed under the insulating layer 130 as shown in FIGS. 3 and 4, or may be disposed between the first insulating layer 131 and the second insulating layer 132. . In the embodiment of FIG. 5, the reflective layer 135 may be electrically connected to the first conductive layer 232. In addition, the reflective layer 135 may be electrically insulated from the first conductive layer 232 by the second insulating layer 132.
  • the position and shape of the reflective layer 135 may also be varied according to the needs of the user, and the scope of the present invention is not limited.
  • FIG. 6 is a view showing an embodiment of a light emitting device package.
  • a groove may be formed in the conductive substrate 300, and the light emitting device 200b according to the above-described embodiments may be disposed in the groove. At least some of the side surfaces and the bottom surface of the light emitting device 200b may be coupled to the conductive substrate 300, and may be coupled to each other by solder 310 or the like.
  • a dielectric layer 320 is disposed on an upper surface of the conductive substrate 300 constituting the body, and a pad 330 for bonding is disposed on the dielectric layer 320 to provide an electrode and a wire of the light emitting device 200b. 340 may be bonded. The other electrode of the light emitting device 200b may be coupled to the conductive substrate 300 and electrically connected to the conductive substrate 300.
  • a molding part 350 is formed around the light emitting device 200b, and the molding part 350 may protect the light emitting device 200b and change a path of light emitted from the light emitting device 350.
  • One or more light emitting devices may be mounted in the above-described light emitting device package, but the present invention is not limited thereto.
  • a plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package.
  • the light emitting device package, the substrate, and the optical member may function as a backlight unit.
  • the display device may include a display device, an indicator device, and a lighting device including a light emitting device package according to an exemplary embodiment.
  • the display device may include a bottom cover, a reflector disposed on the bottom cover, a light emitting module for emitting light, a light guide plate disposed in front of the reflector, and guiding light emitted from the light emitting module to the front, and in front of the light guide plate.
  • An optical sheet including prism sheets disposed, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, and a color filter disposed in front of the display panel. It may include.
  • the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.
  • the lighting apparatus includes a light source module including a substrate and a light emitting device package according to an embodiment, a heat sink for dissipating heat from the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside and providing the light source module to the light source module.
  • a light source module including a substrate and a light emitting device package according to an embodiment, a heat sink for dissipating heat from the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside and providing the light source module to the light source module.
  • the lighting device may include a lamp, a head lamp, or a street lamp.
  • the head lamp includes a light emitting module including light emitting device packages disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, a lens for refracting forward light reflected by the reflector And a shade for blocking or reflecting a part of the light reflected by the reflector toward the lens to achieve a light distribution pattern desired by the designer.
  • a light emitting module including light emitting device packages disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, a lens for refracting forward light reflected by the reflector And a shade for blocking or reflecting a part of the light reflected by the reflector toward the lens to achieve a light distribution pattern desired by the designer.
  • FIG. 7 is a cross-sectional view of a light emitting device according to a fifth embodiment of the present invention.
  • FIG. 8 is a conceptual view illustrating a process in which light is upwardly reflected by a reflective layer.
  • FIG. 9 is an enlarged view of portion A of FIG. Is a diagram for explaining the height difference between the first recess and the second recess.
  • the light emitting device includes a light emitting structure 120 including a first conductive semiconductor layer 122, a second conductive semiconductor layer 126, and an active layer 124, and a first conductive layer.
  • the first electrode 142 electrically connected to the semiconductor semiconductor layer 122, the second electrode 146 electrically connected to the second conductive semiconductor layer 126, and the second recess 127. It includes a reflective layer 135 disposed.
  • the light emitting structure 120 may output light in the ultraviolet wavelength band.
  • the light emitting structure 120 may output light in the near ultraviolet wavelength band (UV-A), may output light in the far ultraviolet wavelength band (UV-B), or light in the deep ultraviolet wavelength band (UV-A). C) can be released.
  • the ultraviolet wavelength band may be determined by the composition ratio of Al of the light emitting structure 120.
  • the light (UV-A) in the near ultraviolet wavelength band may have a wavelength in the range of 320 nm to 420 nm
  • the light in the far ultraviolet wavelength band (UV-B) may have a wavelength in the range of 280 nm to 320 nm
  • deep ultraviolet light Light in the wavelength band (UV-C) may have a wavelength in the range of 100nm to 280nm.
  • the light emitting structure 120 includes a plurality of first recesses 128 formed through the second conductive semiconductor layer 126 and the active layer 124 to a portion of the first conductive semiconductor layer 122, and a plurality of first recesses 128. At least one second recess 127 disposed between the first recesses 128.
  • the first insulating layer 131 may be formed on the first recess 128 and the second recess 127.
  • the first insulating layer 131 may electrically insulate the reflective layer 135 from the active layer 124 and the first conductive semiconductor layer 122.
  • the first insulating layer 131 may extend from the first recess 128 and the second recess 127 onto the second conductive semiconductor layer 126.
  • the first electrode 142 and the second electrode 146 may be ohmic electrodes.
  • the first electrode 142 and the second electrode 146 are indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), and indium gallium zinc oxide (IGZO).
  • IGTO Indium gallium tin oxide
  • AZO aluminum zinc oxide
  • ATO antimony tin oxide
  • GZO gallium zinc oxide
  • IZO IZO Nitride
  • AGZO Al-Ga ZnO
  • IGZO In-Ga ZnO
  • ZnO IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, At least one of Ru, Mg, Zn, Pt, Au, and Hf may be formed, but is not limited thereto.
  • the reflective layer 135 may be disposed in the second recess 127.
  • the reflective layer 135 may be disposed on the first insulating layer 131 in the second recess 127.
  • the reflective layer 1335 may include a conductive material.
  • the reflective layer 135 may include Al (aluminum).
  • the thickness of the aluminum reflective layer 135 is about 30 nm to 100 nm, the light of the ultraviolet wavelength band may reflect 80% or more. Therefore, the light emitted from the active layer 124 can be prevented from being absorbed in the semiconductor layer.
  • TM mode GaN-based blue light emitting device
  • light L1 may be upwardly reflected by the reflective layer 135 by etching the portion of the region having a weak current density and forming the reflective layer 135. Therefore, the light absorption in the light emitting structure 120 can be reduced and light extraction efficiency can be improved. In addition, the directivity angle of the light emitting device can be adjusted.
  • the first conductive semiconductor layer 122 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and the first conductive semiconductor layer 122 may be formed on the first conductive semiconductor layer 122.
  • One dopant may be doped.
  • the first conductive semiconductor layer 122 is a semiconductor material having a composition formula of Inx1Aly1Ga1-x1-y1N (0 ⁇ x1 ⁇ 1, 0 ⁇ y1 ⁇ 1, 0 ⁇ x1 + y1 ⁇ 1), for example, GaN, AlGaN, InGaN, InAlGaN and the like can be selected.
  • the first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te.
  • the first conductive semiconductor layer 122 doped with the first dopant may be an n-type semiconductor layer.
  • the first conductive semiconductor layer 122 may have a low concentration layer 122a having a relatively low Al concentration and a high concentration layer 122b having a relatively high Al concentration.
  • the high concentration layer 122b may have an Al concentration of 60% to 70%, and the low concentration layer 122a may have an Al concentration of 40% to 50%.
  • the low concentration layer 122a is disposed adjacent to the active layer 124.
  • the first electrode 142 may be disposed on the low concentration layer in order to secure a relatively smooth current injection characteristic. That is, the first recess 128 is preferably formed to the region of the low concentration layer 122a. This is because the high concentration layer 122b has a high Al concentration and a relatively low current spreading characteristic.
  • the active layer 124 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 122 meet holes (or electrons) injected through the second conductive semiconductor layer 126.
  • the active layer 124 transitions to a low energy level as electrons and holes recombine, and may generate light having a corresponding wavelength.
  • the active layer 124 may have any one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum line structure, and the active layer 124.
  • the structure of is not limited to this.
  • the active layer may comprise Al.
  • the second conductive semiconductor layer 126 is formed on the active layer 124, and may be implemented as a compound semiconductor such as a group III-V group or a group II-VI group, and a second layer on the second conductive semiconductor layer 126. Dopants may be doped.
  • the second conductive semiconductor layer 126 is a semiconductor material having a composition formula of Inx5Aly2Ga1-x5-y2N (0 ⁇ x5 ⁇ 1, 0 ⁇ y2 ⁇ 1, 0 ⁇ x5 + y2 ⁇ 1) or AlInN, AlGaAs, GaP, GaAs It may be formed of a material selected from GaAsP, AlGaInP.
  • the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba
  • the second conductive semiconductor layer 126 doped with the second dopant may be a p-type semiconductor layer.
  • the second conductive semiconductor layer 126 is AlGaN
  • hole injection may not be smooth due to low electrical conductivity.
  • a material having a relatively high electrical conductivity for example, a GaN-based material, may be disposed on the bottom surface of the second conductive semiconductor layer 126.
  • the thickness d2 of the first electrode 142 may be thinner than the thickness d3 of the first insulating layer 131, and may have a distance d4 of 0 ⁇ m to 4 ⁇ m from the first insulating layer 131. Can be.
  • the thickness d2 of the first electrode 142 may be 40% to 80% of the thickness d3 of the first insulating layer 131.
  • the first insulating layer 131 may have a separation distance d4 of 1 ⁇ m to 3 ⁇ m more preferably from the first electrode 142, and the second insulating layer 132 may have a preferable separation distance. Gap-fil characteristics of the can be improved.
  • the reflective layer 135 may cover a portion of one side and an upper surface of the second electrode 146.
  • the reflective layer 135, such as aluminum has a relatively poor step coverage, and may cause leakage current due to migration characteristics, which may lower reliability. Therefore, it may not be desirable that the reflective layer 1355 completely covers the second electrode 146.
  • the second electrode 146 may be disposed on the lower surface 121 of the light emitting structure.
  • the thickness of the second electrode 146 may be 80% or less of the thickness of the first insulating layer 131.
  • the distance S1 between the plurality of second electrodes may be 3 ⁇ m to 60 ⁇ m.
  • the distance S1 between the plurality of second electrodes is smaller than 3 ⁇ m, the width of the second recess 127 is reduced, making it difficult to form the reflective layer 135 therein.
  • the area of the second electrode 146 may be reduced to increase the operating voltage, and the light output may be lowered due to the problem of removing the effective light emitting area.
  • the width S2 of the reflective layer may be 3 ⁇ m to 30 ⁇ m. If the width S2 of the reflective layer is smaller than 3 ⁇ m, it is difficult to form the reflective layer in the second recess 127. If the width S2 of the reflective layer is larger than 30 ⁇ m, the area of the second electrode 146 decreases, resulting in an increase in operating voltage. .
  • the width S2 of the reflective layer 135 may be equal to the width of the second recess 127.
  • the width of the first recess and the width of the second recess 127 may be the maximum widths formed on the lower surface 121 of the light emitting structure.
  • the reflective layer 135 may include an extension part 135a extending from the second recess 127 toward the second electrode 146.
  • the extension 135a may electrically connect the second electrode 146 separated by the second recess 127 to each other.
  • the width S5 of the extension 135a may be 0 ⁇ m to 20 ⁇ m.
  • the second electrode 146 may extend to the lower surface of the second recess 127 to be electrically connected to the reflective layer 135, and the width S5 may be 20 ⁇ m or more.
  • the width S4 of the reflective layer including the extension 135a may be 20 ⁇ m to 60 ⁇ m.
  • the second electrode 146 may have a first separation distance S3 of 0 ⁇ m to 4 ⁇ m from the first insulating layer 131. When the separation distance is longer than 4 ⁇ m, an area in which the second electrode 146 is disposed may be narrowed, thereby increasing the operating voltage. More preferably, the first insulating layer 131 and the second electrode 146 may have a separation distance S3 of 1 ⁇ m to 4 ⁇ m. When the reflective layer 135 is disposed within the desired separation distance S3, the reflective layer 135 may be sufficiently disposed to satisfy the gap-fil characteristics.
  • the reflective layer 135 may be disposed at the first separation distance S3 between the second electrode 146 and the first insulating layer 131, and the reflective layer 135 may be disposed within the first separation distance S3.
  • the side and top surfaces of the insulating layer 131 and the side and top surfaces of the second electrode 146 may be in contact with each other.
  • a region in which the reflective layer 135 is formed with the second conductive semiconductor layer 126 and the Schottky junction within the first separation distance S3 may be disposed, and current distribution may be facilitated by forming the Schottky junction. Can be.
  • An angle ⁇ 4 formed between the inclined portion of the reflective layer 135 and the lower surface of the second conductive semiconductor layer 126 may be 90 degrees to 145 degrees. If the inclination angle ⁇ 4 is smaller than 90 degrees, the second conductive semiconductor layer 126 may be difficult to etch. If the inclination angle ⁇ 4 is smaller than 145 degrees, the area of the active layer to be etched may be increased to reduce the luminous efficiency.
  • the capping layer 150 may cover the reflective layer 135 and the second electrode 146. Accordingly, the second electrode pad 166, the capping layer 150, the reflective layer 135, and the second electrode 146 may form one electrical channel.
  • the capping layer 150 may completely surround the reflective layer 135 and the second electrode 146 and may contact the side and top surfaces of the first insulating layer 131. Therefore, the capping layer 150 and the second electrode 146 may function as the second conductive layer.
  • the capping layer 150 is formed of a material having good adhesion to the first insulating layer 131, and at least one material selected from the group consisting of materials such as Cr, Al, Ti, Ni, Au, and alloys thereof. It may be made of, it may be made of a single layer or a plurality of layers.
  • the thermal and electrical reliability of the reflective layer 135 and the second electrode 146 may be improved.
  • light is transmitted through a portion of the first insulating layer 131 toward the substrate 170 and is emitted between the first insulating layer 131 and the second electrode 146 to be emitted toward the substrate 170. It may have a reflection function to reflect light upward.
  • the capping layer 150 may be disposed at a second separation distance S6 between the first insulating layer 131 and the second electrode 146.
  • the capping layer 150 may contact the side and top surfaces of the second electrode 146 and the side and top surfaces of the first insulating layer 131 at the second separation distance S6.
  • a region where a Schottky junction is formed by contacting the capping layer 150 and the second conductive semiconductor layer 126 within the second separation distance may be disposed, and current distribution may be facilitated by forming a Schottky junction. .
  • the first conductive layer 165 and the bonding layer 160 are disposed along the bottom surface of the light emitting structure 120 and the shapes of the first recess 128 and the second recess 127. Can be.
  • the first conductive layer 165 may be made of a material having excellent reflectance.
  • the first conductive layer 165 may include aluminum or silver (Ag).
  • the light extraction efficiency may be improved by reflecting light emitted from the active layer 124 toward the substrate 170.
  • the second insulating layer 132 electrically insulates the reflective layer 135, the second electrode 146, and the capping layer 150 from the first conductive layer 165.
  • the first conductive layer 165 may be electrically connected to the first electrode 142 through the second insulating layer 132.
  • the width of the first conductive layer 165 at the portion where the first electrode 142 and the first conductive layer 165 are connected may be smaller than the width of the bottom surface of the first electrode 142.
  • the thickness of the first insulating layer 131 may be 40% to 80% of the thickness of the second insulating layer 132. When 40% to 80% is satisfied, the thickness of the first insulating layer 131 becomes thin and the upper surface of the reflective layer 135 approaches the first conductive semiconductor layer 122, thereby improving light extraction efficiency.
  • the thickness of the first insulating layer 131 may be 3000 ohms to 7000 ohms. If it is thinner than 3000 ohms strong, the electrical reliability may deteriorate, and if it is thicker than 7000 ohms strong, the reflective layer 135 when the reflective layer 135 and the capping layer 150 are disposed above and on the side of the first insulating layer 131. In addition, the step coverage characteristics of the capping layer 150 may not be good and may cause peeling or cracking. In the case of causing peeling or cracking, the electrical reliability may be deteriorated or the light extraction efficiency may be deteriorated.
  • the second insulating layer 132 may have a thickness of 4000 ohms to 10,000 ohms. If it is thinner than 4000 ohms, the electrical reliability of the device may deteriorate. If it is thicker than 10000 ohms, the reliability may be deteriorated by the pressure or thermal stress applied to the device during the process. Can cause a problem.
  • the thickness of the first insulating layer 131 and the second insulating layer 132 is not limited thereto.
  • the bonding layer 160 may comprise a conductive material.
  • the bonding layer 160 may include a material selected from the group consisting of gold, tin, indium, aluminum, silicon, silver, nickel, and copper, or an alloy thereof.
  • the substrate 170 may be made of a conductive material.
  • the substrate 170 may include a metal or a semiconductor material.
  • the substrate 170 may be a metal having excellent electrical conductivity and / or thermal conductivity. In this case, heat generated during operation of the light emitting device can be quickly discharged to the outside.
  • the substrate 170 may include a material selected from the group consisting of silicon, molybdenum, silicon, tungsten, copper, and aluminum, or an alloy thereof.
  • the second electrode pad 166 may be made of a conductive material.
  • the second electrode pad 166 may have a single layer or a multilayer structure, and may include titanium (Ti), nickel (Ni), silver (Ag), and gold (Au).
  • the second electrode pad 166 may have a structure of Ti / Ni / Ti / Ni / Ti / Au.
  • a center portion of the second electrode pad 166 may be recessed so that an upper surface thereof may have at least one concave portion and at least one convex portion. Wires (not shown) may be bonded to the recesses of the upper surface. Therefore, the adhesive area is widened, and the second electrode pad 166 and the wire may be more firmly bonded.
  • the second electrode pad 166 may function to reflect light, the closer the light emitting structure 120 is to the second electrode pad 166, the light extraction efficiency may be improved.
  • the distance between the second electrode pad 166 and the light emitting structure 120 may be 5 ⁇ m to 30 ⁇ m. If the thickness is smaller than 5 ⁇ m, it is difficult to secure a process margin. If the thickness is larger than 30 ⁇ m, the area of the second electrode pad 166 may be widened in the entire device, thereby reducing the area of the light emitting layer 24 and reducing the amount of light.
  • the height of the upper surface of the convex portion of the second electrode pad 166 may be higher than that of the active layer 124. Accordingly, the second electrode pad 166 may reflect light emitted in the horizontal direction of the device from the active layer 124 to the top to improve light extraction efficiency and to control the direction angle.
  • Unevenness may be formed on an upper surface of the light emitting structure. Such unevenness may improve extraction efficiency of light emitted from the light emitting structure 120.
  • the unevenness may have a different average height according to the ultraviolet wavelength, and in the case of UV-C, the light extraction efficiency may be improved when the UV-C has a height of about 300 nm to 800 nm and an average of about 500 nm to 600 nm.
  • the passivation layer 180 may be disposed on the top and side surfaces of the light emitting structure 12.
  • the passivation layer 180 may have a thickness of 2000 ohms to 5000 ohms. If it is smaller than 2000 ohms, it is not enough to protect the device from external moisture or foreign substances, which may worsen the electrical and optical reliability of the device, and if it is thicker than 5000 ohms, the stress on the device will increase, which will reduce the optical reliability. In this case, the cost of the device may increase as the process time increases.
  • the protrusion height H1 of the second recess 127 may be greater than the protrusion height H2 of the first recess 128.
  • the protrusion height may be defined as a vertical distance from the active layer 124 to the top surfaces of the first recesses 128 and the second recesses 127.
  • the protrusion height H1 of the second recess 127 may satisfy the following Equation 1.
  • W4 is the distance from the intermediate point C1 between the first recess 128 and the second recess 127 adjacent to each other to the top surface C2 of the second recess
  • ⁇ 1 is the intermediate point C1.
  • ⁇ 1 When ⁇ 1 is less than 0.5 degrees, it may be difficult to perform an effective reflection function because the height of the reflective layer is relatively low. In addition, if it exceeds 5.0 degrees, since the height of the reflective layer is too high, the area of the active layer is excessively reduced in proportion to it. In addition, there is a problem that the recess process and the insulation layer process need to be more precisely managed.
  • a distance from the middle point C1 of the shortest distance between the bottom surface of the first recess 128 and the bottom surface of the second recess 127 to the top surface C2 of the second recess 20 ⁇ m to 40 ⁇ m can be.
  • the protrusion height of the second recess 127 may be about 300 nm to 800 nm. In this case, the light emitted from the active layer 124 in the TM mode can be effectively reflected upward.
  • the second recess 127 may be formed higher than the first recess 128.
  • the present invention is not limited thereto, and the height of the first recess 128 and the height of the second recess 127 may be the same.
  • the inclination angle ⁇ 2 of the first recess 128 is 40 degrees to 70 degrees, or 60 degrees to 70 degrees
  • the inclination angle ⁇ 3 of the second recess 127 is 40 degrees to 70 degrees, or 60 degrees. To 70 degrees.
  • FIG. 11 is a plan view of a light emitting device according to a seventh embodiment of the present invention
  • FIG. 12 is a view showing a distribution of current density of the light emitting device
  • FIG. 13A is an enlarged view of a portion B of FIG. 11
  • FIG. 13B is
  • FIG. 13A 14 is a view showing a first recess
  • FIG. 15 is a second modification of FIG. 13.
  • the light emitting device 100 may include a plurality of light emitting regions 136 partitioned by the planar reflective layer 135.
  • the light emitting region 136 may be an independent space partitioned by the reflective layer 135.
  • the light emitting region 136 may have various shapes.
  • the light emitting region 136 may be polygonal or circular.
  • the plurality of first electrodes 142 and the first recesses 128 may be disposed in the light emitting regions 136, respectively.
  • the reflective layer 135 surrounds the first electrode 142 in which current is dispersed. Therefore, light emitted from the periphery of the first electrode 142 may be upwardly reflected by the reflective layer 135 surrounding the emission region 136.
  • the reflective layer 135 may be disposed in a region in which a region having a current density of 40% or less is connected to a current density of 100% of the first electrode 142.
  • the distance between the center of the first recess and the center of the second recess disposed on the horizontal line may be 30 ⁇ m to 40 ⁇ m.
  • the active layer of the region having good current diffusion may be etched, resulting in poor luminous efficiency. If the distance is larger than 40 ⁇ m, the region having poor current diffusion characteristics may remain, resulting in deterioration of light extraction efficiency. Can be. In the case where the reflective layer is formed in a region having a current density of less than 30%, the area of the isolated region is too large, which may lower the efficiency. In addition, a large portion of the light emitted to the side is likely to be absorbed in the light emitting structure.
  • the reflective layer 135 includes a plurality of end portions 135a adjacent to the edge of the first conductive semiconductor layer 122, and the gap between the end portion 135a and the edge of the first conductive semiconductor layer 122 ( d1) may be 1.0 ⁇ m to 10 ⁇ m. If less than 1.0 ⁇ m, it is difficult to secure the process margin, if larger than 10 ⁇ m may not be utilized in the region of the current diffusion characteristics are not good light extraction efficiency may be lowered. However, the present invention is not limited thereto, and the end portion 135a of the reflective layer 135 may also be sealed to form an isolated region.
  • the effective light emitting area P2 is narrow.
  • the effective emission area P2 may be defined as a boundary point having a current density of 40% or less based on the neighboring point P1 of the first electrode having the highest current density.
  • the distance between the center of the first recess and the center of the second recess disposed on the horizontal line may be 30 ⁇ m to 40 ⁇ m. If it is narrower than 30 ⁇ m, the active layer of the region having good current diffusion may be etched, resulting in poor luminous efficiency. If it is wider than 40 ⁇ m, the region having poor current diffusion characteristics may remain, resulting in a decrease in light extraction efficiency. .
  • an intermediate point between neighboring first electrodes 142 may have a low current density and thus may have very low efficiency of contributing to light emission. Therefore, the embodiment can improve the light extraction efficiency by forming a reflective layer in a region having a low current density.
  • the reflective layer 135 may include an inclined portion 135d and an upper surface portion 135c. Most of light emitted from the active layer 124 may be upwardly reflected by the inclined portion 135d.
  • the upper surface portion 135c of the reflective layer 135 may be disposed flatly, and when disposed flatly, the light extraction efficiency may be improved by reflecting light reflected internally within the light emitting structure 120 upwardly.
  • the light emitting region 136 defined by the reflective layer 135 may have an area of 2.0 to 5.0 times the first electrode 142.
  • the reflective layer 135 may be formed in a region having a current density of 40% or less based on the first electrode 142.
  • the distance between the center of the first recess 128 and the center of the second recess 127 disposed on the horizontal line may be 30 ⁇ m to 40 ⁇ m.
  • the light emitting region 136 defined by the reflective layer 135 may have an area of 2.0 to 5.0 times the first recess 128.
  • the area of the light emitting region 136 may be adjusted according to the Al concentration of the light emitting structure 120.
  • the center of the reflective layer 135 may be disposed in a region where the current density is lowered to 40% or less, for example, a distance of 30 ⁇ m to 40 ⁇ m from the center of the first recess 128.
  • the width of the 135 may be 2 ⁇ m to 5 ⁇ m.
  • the width of the reflective layer 135 is smaller than 2 ⁇ m, the material constituting the reflective layer 135 may cause cracking or peeling while the step coverage characteristics are deteriorated. If the width of the reflective layer 135 is larger than 5 ⁇ m, the effective active layer is etched to lower the light emission efficiency. Can cause.
  • the reflective layer 135 may have a plurality of reflective walls 138 formed of straight lines contacting the boundary region where the current density is lowered to 40% or less.
  • the reflective wall 138 may have a polygonal shape consisting of straight lines.
  • the plurality of reflective walls 138 may be connected to each other to form a plurality of light emitting regions 136 as shown in FIG. 13A, but is not limited thereto.
  • the plurality of reflective walls 138 may be spaced apart from each other.
  • the first recess 128 may include a first-first recess 128a and a first-second recess 128b that are adjacent to each other.
  • the second receiver may include a second-first recess 127a and a second-second recess 127b adjacent to each other.
  • the second recess 127 is disposed between the first-first recess 128a and the first-second recess 128b, and the first recess 128 is the second-first recess 127a. And between the second and second recesses 127b.
  • the second-first recess 127a and the second-second recess 127b may have a hexagonal structure, but are not limited thereto.
  • the first light emitting region 136a is configured by the first-first recess 128a surrounded by the second-first recess 127a
  • the second light emitting region 136b is the first-second recess ( 128b may be surrounded by the second-second recess 127b. Therefore, the first and second light emitting regions 136a and 136b may have a structure in which the second conductive semiconductor layer and the active layer are separated from each other.
  • the second-first recess 127a and the second-second recess 127b may be connected to each other as shown in FIG. 13A, or may be spaced apart from each other as shown in FIG. 13B.
  • the active layer 124 is removed and thus does not participate in light emission.
  • the area that does not actually participate in light emission is the first area W2 from which the active layer 124 is removed.
  • the width of the first recess 128 may vary according to the width W5 of the inclined surface. Therefore, it may be desirable to make the inclination angle of the inclined surface large. For example, the angle of the inclined surface may be 40 degrees to 70 degrees, or 60 degrees to 70 degrees.
  • a rectangular matrix may be continuously arranged.
  • the shape of the light emitting region 136 formed by the reflective layer 135 may be variously modified.
  • the shape of the light emitting region 136 may be hexagonal, octagonal triangular, or circular.
  • FIG. 16 is a plan view of a light emitting device according to an eighth embodiment of the present invention
  • FIG. 17 is an enlarged view of a portion C of FIG. 16
  • FIG. 18 is a photograph of a light emitting structure to which power is applied.
  • the first recess 128 may extend in the first direction (X direction) and be spaced apart in the second direction (Z direction).
  • the first direction may be a direction perpendicular to the thickness direction (Y direction) of the light emitting structure 120.
  • the width (area) of the first recess 128 and the second recess 127 is defined as an area formed under the light emitting structure 120.
  • the first electrode 142 may be disposed in the first recess 128.
  • the area of the first electrode 142 may be controlled by adjusting the number of the first recesses 128 or the length extending in the first direction.
  • the area of the first electrode needs to be wider than that of the GaN light emitting structure emitting blue light.
  • the current injection area can be increased.
  • the width W1 of the first recess 128 may be 30 ⁇ m or more and 60 ⁇ m or less.
  • an area in which the first electrode 142 is disposed may be narrow, and thus injection of electrons may not be smooth, resulting in an increase in operating voltage.
  • the active layer may be excessively reduced to lower the light output.
  • the distance d6 between the first recesses 128 may be 20 ⁇ m to 60 ⁇ m. If the distance d6 is smaller than 20 ⁇ m, the active layer may be excessively reduced to reduce the light output. If the distance d6 is smaller than 60 ⁇ m, the number of the first recesses 128 may be reduced to increase the number of the first electrodes 142. It is difficult to secure enough area.
  • An area of the plurality of first electrodes 142 may be 19% to 29% based on 100% of the maximum area in the first direction of the light emitting structure 120. If the area of the first electrode 142 is smaller than 19%, sufficient current injection and diffusion may be difficult. If the area of the first electrode 142 is larger than 29%, the active layer 124 and the second electrode 146 may be difficult. ) Has a problem that the light output is reduced and the operating voltage is increased because the area that can be disposed is reduced.
  • An area of the plurality of first recesses 128 may be 30% to 45% based on a maximum area of 100% in the first direction of the light emitting structure 120. If the area of the first recess 128 is smaller than 30%, the area of the first electrode 142 may be reduced. If the area of the first recess 128 is larger than 45%, the active layer 124 may be used. As the area in which the second electrode 146 may be disposed is reduced, there is a problem that the light output is lowered and the operating voltage is increased.
  • the plurality of second recesses 127 may extend in the first direction (X direction) and may be spaced apart in the second direction (Z direction). The second recess 127 may be disposed between the plurality of first recesses 128.
  • the reflective layer 135 may be disposed in the second recess 127. Accordingly, the reflective layer 135 may be disposed on both side surfaces of the plurality of first electrodes 142 to upwardly reflect light emitted from the periphery of the first electrode 142.
  • the width S2 of the reflective layer 135 may be equal to or wider than the width of the second recess 127.
  • Increasing the composition of aluminum may weaken the current dispersion effect. Therefore, the current is distributed only in the vicinity of each of the first electrode 142, the current density can be sharply lowered at the far point. Therefore, the effective light emitting region P2 is narrowed.
  • the effective emission area P2 may be defined as a boundary point having a current density of 30% to 40% or less based on the center of the first electrode 142 having a current density of 100%.
  • the distance from 5 ⁇ m to 40 ⁇ m in the second direction from the center of the first recess 128 may be defined as the boundary point. However, it may vary depending on the level of the injection current, the concentration of Al.
  • the reflective layer 135 may be disposed at an interface point having a current density of 30% to 40% or less. That is, in the exemplary embodiment, the light extraction efficiency may be improved by forming the reflective layer 135 in a region having a low current density.
  • the first direction length of the second recess 127 may be longer than the first direction length of the neighboring first recess 128. If the length of the second recess 127 is equal to or shorter than the length of the neighboring first recess 128, the light emitted from the end point of the first recess 128 may not be controlled.
  • first recess 128 adjacent to the second recess 127 may be two first recesses 128 disposed closest to the second recess 127 in the second direction (Z direction). Can be. That is, the second recess 127 may be formed longer than at least one of two first recesses 128 adjacent to each other.
  • One end of the second recess 127 may be longer than one end of the first recess 128 (d5).
  • the first direction length of the second recess 127 may be 104% or more of the first direction length of the first recess 128 disposed adjacently. In this case, light emitted from the periphery of both ends of the first electrode 142 may be effectively reflected upward.
  • a distance d1 between the second recess 127 and the side surface of the light emitting structure 120 may be 1.0 ⁇ m to 10 ⁇ m.
  • the separation distance d1 is smaller than 1.0 ⁇ m, it is difficult to secure a process margin and reliability may be lowered because the capping layer 150 may not be disposed to surround the reflective layer 135.
  • the separation distance d1 is larger than 10 ⁇ m, an area participating in light emission may be reduced, and light extraction efficiency may be reduced.
  • the present invention is not limited thereto, and the second recess 127 and the reflective layer 135 may be formed to the side surface of the light emitting structure 120.
  • An area of the plurality of second recesses 127 may be 4% to 10% based on a maximum area of 100% in the first direction of the light emitting structure 120.
  • the area of the second recess 127 is smaller than 4%, it is difficult to form the reflective layer 135 inside the second recess 127.
  • the area of the second recess 127 is larger than 10%, the area of the active layer may be reduced, and thus the light output may be weakened.
  • the area of the reflective layer 135 may be 46% to 70% based on 100% of the maximum area in the first direction of the light emitting structure 120.
  • the area of the reflective layer 135 reflecting the actual light may be equal to or smaller than the area of the second recess 127.
  • the area of the reflective layer 135 is an area including an extension part extending to the lower surface of the light emitting structure 120 to cover the second electrode 146.
  • the area of the second electrode 146 may be 57% to 86% based on 100% of the maximum area in the first direction of the light emitting structure 120. If the area of the second electrode 146 is smaller than 57%, the operating voltage may increase. If the area of the second electrode 146 is larger than 86%, the area of the first electrode 142 may be reduced, resulting in lower current injection and dispersion efficiency. .
  • the area of the second electrode 146 may be the remaining area of the light emitting structure 120 except for the areas of the first recess 128 and the second recess 127. Accordingly, the second electrode 146 may be one electrode connected as a whole.
  • FIG. 19 is a plan view of a light emitting device according to a ninth embodiment of the present invention
  • FIGS. 20A and 20B are views showing a light emitting device according to a tenth embodiment of the present invention
  • FIG. 21 is an eleventh embodiment of the present invention
  • FIG. 22 is a view showing a light emitting device according to an example
  • FIG. 22 is a view showing a light emitting device according to a twelfth embodiment of the present invention.
  • the side reflector 135b may be connected to both ends of the plurality of reflective layers 135. That is, the third recess 129 may be formed at the edge of the light emitting structure 120, and the side reflector 135b may be formed in the third recess 129.
  • the reflective layer 135 and the side reflector 135b may include the same reflective material. In exemplary embodiments, the reflective layer 135 and the side reflector 135b may include aluminum.
  • the plurality of reflective layers 135 and the side reflectors 135b may be electrically connected to each other or may be spaced apart from each other.
  • a plurality of first regions 136 may be formed.
  • the plurality of first regions 136 may be spaces spaced apart from each other by the plurality of reflective layers 135.
  • First recesses 128 and first electrodes 142 may be disposed in the plurality of first regions 136, respectively. According to this configuration, the light emitted from around the both ends of the first electrode 142 can be effectively reflected upward.
  • a plurality of second electrodes may be separated by the second recess 127 and the third recess.
  • the divided plurality of second electrodes 146 may be electrically connected to each other by an extension of the reflective layer 135.
  • the reflective layer 135 may not be disposed at the edge of the light emitting device. That is, the first recess 128 or the second recess 127 may be disposed at the edge due to various reasons such as a process margin.
  • the capping layer 150, the first conductive layer 165, and the substrate 70 protrude from the edge portion Z1 of the light emitting device to upwardly radiate the light L2 emitted from the active layer 124.
  • An angle between the capping layer 150 and the bottom surface of the second conductive semiconductor layer 126 may be 90 degrees to 145 degrees. When the angle is smaller than 90 degrees or larger than 145 degrees, the efficiency of reflecting light moving toward the side upwards may be inferior.
  • the light emitted between the plurality of first recesses 128 reflects upwardly from the reflective layer 135, and the light emitted from the edge of the light emitting structure 120 reflects upwardly of the capping layer 150.
  • the plurality of reflective layers 135 may extend in the second direction (Z direction) and be spaced apart in the first direction (X direction).
  • the arrangement of the first recess 128 and the second recess 127 may be appropriately modified according to the position of the electrode pad.
  • the first recess 128 and the first electrode 142 may extend in the first direction and the second direction, respectively. Accordingly, the first recess 128 may form a plurality of second regions 137 in regions crossing each other.
  • the plurality of reflective layers 135 may be disposed in the second regions 137 to reflect light upward.
  • the side reflector 135b may be disposed at an edge of the light emitting structure 120.
  • the plurality of reflective layers 135 and the side reflectors 135b may be electrically connected to each other through the second electrode.
  • the present invention is not limited thereto, and the plurality of reflective layers 135 and the side reflectors 135b may be electrically insulated.
  • the light emitting device may be configured as a package and used for curing a resin, a resist, a SOD, or a SOG. Alternatively, the light emitting device may be used for medical treatment or sterilization of an air cleaner or water purifier.
  • the light emitting device may be used as a light source of an illumination system, or may be used as a light source of an image display device or a light source of an illumination device. That is, the light emitting element can be applied to various electronic devices disposed in the case to provide light. For example, when a mixture of a light emitting device and an RGB phosphor is used, white light having excellent color rendering (CRI) may be realized.
  • CRI color rendering
  • the light emitting device described above may be configured as a light emitting device package and used as a light source of an illumination system.
  • the light emitting device may be used as a light source of an image display device or a light source of an illumination device.
  • a backlight unit of an image display device When used as a backlight unit of an image display device, it can be used as an edge type backlight unit or a direct type backlight unit, when used as a light source of a lighting device can be used as a luminaire or bulb type, and also used as a light source of a mobile terminal It may be.
  • the light emitting element includes a laser diode in addition to the light emitting diode described above.
  • the laser diode may include the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer having the above-described structure.
  • an electro-luminescence phenomenon is used in which light is emitted when a current flows, but the direction of emitted light is used.
  • a laser diode may emit light having a specific wavelength (monochromatic beam) in the same direction with the same phase by using a phenomenon called stimulated emission and a constructive interference phenomenon. Due to this, it can be used for optical communication, medical equipment and semiconductor processing equipment.
  • a photodetector may be a photodetector, which is a type of transducer that detects light and converts its intensity into an electrical signal.
  • Such photodetectors include photovoltaic cells (silicon, selenium), photoelectric devices (cadmium sulfide, cadmium selenide), photodiodes (e.g. PD having peak wavelength in visible blind or true blind spectral regions) Transistors, optoelectronic multipliers, phototubes (vacuum, gas encapsulation), infrared (Infra-Red) detectors, and the like, but embodiments are not limited thereto.
  • a light emitting device such as a photodetector may generally be manufactured using a direct bandgap semiconductor having excellent light conversion efficiency.
  • the photodetector has various structures, and the most common structures include a pin photodetector using a pn junction, a Schottky photodetector using a Schottky junction, a metal semiconductor metal (MSM) photodetector, and the like. have.
  • MSM metal semiconductor metal
  • a photodiode may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer having the above-described structure, and have a pn junction or pin structure.
  • the photodiode operates by applying a reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and current flows. In this case, the magnitude of the current may be approximately proportional to the intensity of light incident on the photodiode.
  • Photovoltaic cells or solar cells are a type of photodiodes that can convert light into electrical current.
  • the solar cell may include the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer having the above-described structure similarly to the light emitting device.
  • a general diode using a p-n junction it may be used as a rectifier of an electronic circuit, it may be applied to an ultra-high frequency circuit and an oscillation circuit.
  • the above-described light emitting device is not necessarily implemented as a semiconductor and may further include a metal material in some cases.
  • a light emitting device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and by a p-type or n-type dopant It may also be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un dispositif électroluminescent et un conditionnement de dispositif électroluminescent le comprenant. Le dispositif électroluminescent comprend : une structure électroluminescente qui comporte une première couche conductrice semi-conductrice, une deuxième couche conductrice semi-conductrice, et une couche active, disposée entre la première couche conductrice semi-conductrice et la deuxième couche conductrice semi-conductrice, et qui comprend un premier évidement et un deuxième évidement traversant la deuxième couche conductrice semi-conductrice et la couche active et disposés sur une partie d'une zone de la première couche conductrice semi-conductrice ; une électrode de connexion qui est disposée à l'intérieur du premier évidement et qui est électriquement connectée à la première couche conductrice semi-conductrice ; une couche réfléchissante qui est disposée à l'intérieur du deuxième évidement ; et une couche isolante qui sert à l'isolation électrique de la couche réfléchissante et de la structure électroluminescente.
PCT/KR2016/009469 2015-08-25 2016-08-25 Dispositif électroluminescent et conditionnement de dispositif électroluminescent le comprenant WO2017034356A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201680059835.1A CN108352429B (zh) 2015-08-25 2016-08-25 发光器件和包括发光器件的发光器件封装
JP2018510835A JP7148131B2 (ja) 2015-08-25 2016-08-25 発光素子およびこれを含む発光素子パッケージ
US15/754,639 US10490702B2 (en) 2015-08-25 2016-08-25 Light-emitting device and light-emitting device package comprising same
EP16839644.8A EP3343647B1 (fr) 2015-08-25 2016-08-25 Dispositif électroluminescent et boîtier de dispositif électroluminescent le comprenant

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20150119636 2015-08-25
KR10-2015-0119636 2015-08-25
KR1020160097384A KR102554702B1 (ko) 2015-08-25 2016-07-29 발광소자 및 이를 포함하는 발광소자 패키지
KR10-2016-0097384 2016-07-29

Publications (1)

Publication Number Publication Date
WO2017034356A1 true WO2017034356A1 (fr) 2017-03-02

Family

ID=58100533

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2016/009469 WO2017034356A1 (fr) 2015-08-25 2016-08-25 Dispositif électroluminescent et conditionnement de dispositif électroluminescent le comprenant

Country Status (1)

Country Link
WO (1) WO2017034356A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3506374A1 (fr) * 2017-12-27 2019-07-03 Lg Innotek Co. Ltd Dispositif à semiconducteur
CN110034217A (zh) * 2017-12-27 2019-07-19 Lg伊诺特有限公司 半导体器件
KR20190139798A (ko) * 2018-06-08 2019-12-18 주식회사 엘지생활건강 모발, 피부 또는 섬유 성분 소실 방지용 조성물
EP3490012A4 (fr) * 2016-07-20 2020-03-11 LG Innotek Co., Ltd. Dispositif à semi-conducteurs
KR20200088042A (ko) * 2019-01-14 2020-07-22 서울바이오시스 주식회사 심자외선 발광 다이오드
WO2022015103A1 (fr) * 2020-07-17 2022-01-20 서울바이오시스주식회사 Diode électroluminescence ultraviolette profonde
US11527677B2 (en) * 2018-04-05 2022-12-13 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173579A (ja) * 2005-12-22 2007-07-05 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
KR20110117964A (ko) * 2010-04-22 2011-10-28 삼성엘이디 주식회사 반도체 발광 소자
KR20140006429A (ko) * 2012-07-05 2014-01-16 엘지이노텍 주식회사 발광소자
KR20140057811A (ko) * 2012-11-05 2014-05-14 일진엘이디(주) 열전도성 기판을 갖는 반도체 발광소자
KR20140146354A (ko) * 2013-06-17 2014-12-26 삼성전자주식회사 반도체 발광 장치 및 반도체 발광소자 패키지

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173579A (ja) * 2005-12-22 2007-07-05 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
KR20110117964A (ko) * 2010-04-22 2011-10-28 삼성엘이디 주식회사 반도체 발광 소자
KR20140006429A (ko) * 2012-07-05 2014-01-16 엘지이노텍 주식회사 발광소자
KR20140057811A (ko) * 2012-11-05 2014-05-14 일진엘이디(주) 열전도성 기판을 갖는 반도체 발광소자
KR20140146354A (ko) * 2013-06-17 2014-12-26 삼성전자주식회사 반도체 발광 장치 및 반도체 발광소자 패키지

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3490012A4 (fr) * 2016-07-20 2020-03-11 LG Innotek Co., Ltd. Dispositif à semi-conducteurs
US11183614B2 (en) 2016-07-20 2021-11-23 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device
CN110034217A (zh) * 2017-12-27 2019-07-19 Lg伊诺特有限公司 半导体器件
EP3506374A1 (fr) * 2017-12-27 2019-07-03 Lg Innotek Co. Ltd Dispositif à semiconducteur
CN110034217B (zh) * 2017-12-27 2023-08-18 苏州立琻半导体有限公司 半导体器件
TWI799483B (zh) * 2017-12-27 2023-04-21 大陸商蘇州樂琻半導體有限公司 半導體裝置
US11075321B2 (en) 2017-12-27 2021-07-27 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device
US11527677B2 (en) * 2018-04-05 2022-12-13 Suzhou Lekin Semiconductor Co., Ltd. Semiconductor device
KR102415236B1 (ko) 2018-06-08 2022-06-30 주식회사 엘지생활건강 모발, 피부 또는 섬유 성분 소실 방지용 조성물
KR20190139798A (ko) * 2018-06-08 2019-12-18 주식회사 엘지생활건강 모발, 피부 또는 섬유 성분 소실 방지용 조성물
KR20200088042A (ko) * 2019-01-14 2020-07-22 서울바이오시스 주식회사 심자외선 발광 다이오드
US20210305459A1 (en) * 2019-01-14 2021-09-30 Seoul Viosys Co., Ltd. Deep uv light emitting diode
CN111509096A (zh) * 2019-01-14 2020-08-07 首尔伟傲世有限公司 深紫外线发光二极管
WO2020149531A1 (fr) * 2019-01-14 2020-07-23 서울바이오시스주식회사 Diode électroluminescence ultraviolette profonde
US11942573B2 (en) 2019-01-14 2024-03-26 Seoul Viosys Co., Ltd. Deep UV light emitting diode
KR102697414B1 (ko) * 2019-01-14 2024-08-22 서울바이오시스 주식회사 심자외선 발광 다이오드
WO2022015103A1 (fr) * 2020-07-17 2022-01-20 서울바이오시스주식회사 Diode électroluminescence ultraviolette profonde

Similar Documents

Publication Publication Date Title
WO2017034356A1 (fr) Dispositif électroluminescent et conditionnement de dispositif électroluminescent le comprenant
WO2017222341A1 (fr) Dispositif à semi-conducteur et boîtier de dispositif à semi-conducteur le comportant
WO2017191966A1 (fr) Boîtier pour élément à semi-conducteur
WO2017222279A1 (fr) Dispositif semi-conducteur
WO2017030396A1 (fr) Élément électroluminescent, boîtier d'élément électroluminescent comprenant un élément électroluminescent, et dispositif électroluminescent comprenant un boîtier d'élément électroluminescent
WO2015156588A1 (fr) Élément électroluminescent et système d'éclairage
WO2019088763A1 (fr) Dispositif à semi-conducteur
WO2016032167A1 (fr) Boîtier d'élément électroluminescent
WO2018106030A1 (fr) Dispositif électroluminescent
WO2019124843A1 (fr) Diode électroluminescente à boîtier à l'échelle d'une puce
WO2017213455A1 (fr) Dispositif à semi-conducteur
WO2017078402A1 (fr) Plaque optique, élément d'éclairage et module de source lumineuse
WO2013183888A1 (fr) Élément émetteur de lumière
WO2019045167A1 (fr) Boîtier de dispositif électroluminescent et dispositif de source lumineuse le comprenant
WO2018044102A1 (fr) Diode électroluminescente de boîtier-puce
WO2016117905A1 (fr) Module de source de lumière et dispositif d'éclairage
WO2018088851A1 (fr) Élément semi-conducteur
WO2017078441A1 (fr) Dispositif à semi-conducteur
WO2018048275A1 (fr) Dispositif semi-conducteur
WO2015170848A1 (fr) Dispositif électroluminescent
WO2019088704A1 (fr) Boîtier de dispositif électroluminescent et dispositif d'éclairage le comprenant
WO2018139803A1 (fr) Boîtier de dispositif à semi-conducteur
WO2015030391A1 (fr) Élément électroluminescent
WO2018128419A1 (fr) Dispositif à semiconducteur et boîtier de dispositif électroluminescent le comportant
WO2020040449A1 (fr) Dispositif à semi-conducteur

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16839644

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2018510835

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 15754639

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2016839644

Country of ref document: EP