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WO2017024640A1 - 阵列基板及其制造方法 - Google Patents

阵列基板及其制造方法 Download PDF

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Publication number
WO2017024640A1
WO2017024640A1 PCT/CN2015/088713 CN2015088713W WO2017024640A1 WO 2017024640 A1 WO2017024640 A1 WO 2017024640A1 CN 2015088713 W CN2015088713 W CN 2015088713W WO 2017024640 A1 WO2017024640 A1 WO 2017024640A1
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WIPO (PCT)
Prior art keywords
layer
pixel electrode
oxide semiconductor
thin film
film transistor
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PCT/CN2015/088713
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English (en)
French (fr)
Inventor
刘洋
Original Assignee
深圳市华星光电技术有限公司
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Priority to US14/897,677 priority Critical patent/US10566458B2/en
Publication of WO2017024640A1 publication Critical patent/WO2017024640A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps

Definitions

  • the present invention relates to the field of display technologies, and in particular to an array substrate and a method of fabricating the same.
  • liquid crystal displays have become the most common display devices.
  • the first pixel electrode and the second pixel electrode are both disposed on the array substrate, so that the electric field in the horizontal direction can be Drives the liquid crystal, so it has the advantages of wide viewing angle, high brightness, high contrast, and fast response.
  • the array substrate of the existing IPS type and FFS type liquid crystal display needs to sequentially form a gate metal layer, an active layer, a source/drain metal layer, a first transparent electrode layer, a via pattern, and a second by a mask patterning process.
  • the transparent electrode layer requires a total of six mask patterning processes, so there is a technical problem that the manufacturing process is too complicated.
  • the invention provides a method for manufacturing an array substrate, comprising:
  • the oxide semiconductor pattern includes an active layer of the thin film transistor and a second pixel electrode pattern
  • Plasma processing is performed on the second pixel electrode pattern in the oxide semiconductor pattern to form a second pixel electrode.
  • plasma processing is performed on the second pixel electrode pattern in the oxide semiconductor pattern, specifically:
  • the second pixel electrode pattern in the oxide semiconductor pattern is subjected to plasma treatment using SF 6 , N 2 , Ar or He.
  • the scan line, the common electrode line, the gate of the thin film transistor, and the first pixel electrode are formed on the base substrate, specifically:
  • the remaining photoresist is stripped.
  • an oxide semiconductor pattern, a data line, and a source of the thin film transistor are formed on the gate insulating layer, specifically:
  • the remaining photoresist is stripped.
  • the passivation layer is etched to expose a second pixel electrode pattern in the oxide semiconductor pattern, specifically:
  • the remaining photoresist is stripped.
  • the passivation layer is etched, specifically:
  • the passivation layer is etched using sulfur hexafluoride.
  • the present invention also provides an array substrate comprising a plurality of sub-pixel units formed on a substrate, each of the sub-pixel units including a thin film transistor and a second pixel electrode;
  • the active layer of the thin film transistor and the second pixel electrode are located in the same layer;
  • the material of the active layer is an oxide semiconductor, and the material of the second pixel electrode is a plasma-treated oxide semiconductor.
  • a gate of the thin film transistor is formed on the base substrate, the active layer is located above the gate, and a gate insulation is formed between the active layer and the gate Floor;
  • a source of the thin film transistor is formed on the active layer.
  • the array substrate further includes a common electrode line, a scan line, and a data line;
  • the common electrode line and the scan line are both in the same layer as the gate;
  • the data line is in the same layer as the source.
  • the array substrate further includes a first pixel electrode formed on the base substrate.
  • the present invention brings about the following beneficial effects: in the array substrate provided by the present invention, the active layer and the second pixel electrode are located in the same layer, and the material of the second pixel electrode is a plasma-treated oxide semiconductor, and is active.
  • the material of the layer is an oxide semiconductor.
  • an oxide semiconductor pattern including an active layer and a second pixel electrode pattern may be formed in the same mask patterning process.
  • the second pixel electrode pattern is plasma-treated to increase the electrical conductivity of the oxide semiconductor so that the electrical conductivity reaches the requirements of the pixel electrode, so that the second pixel electrode can be formed. Therefore, the technical solution provided by the present invention can reduce the number of times of the mask patterning process, thereby solving the technical problem that the existing array substrate manufacturing process is too complicated, and can improve production efficiency and reduce production cost.
  • FIG. 1 is a schematic diagram of an array substrate according to an embodiment of the present invention.
  • 2a is a schematic view showing formation of a transparent electrode layer and a first metal layer in the manufacturing process of the array substrate provided by the embodiment of the invention
  • 2b is a schematic diagram of forming a scan line, a common electrode line, a gate, and a first pixel electrode in the manufacturing process of the array substrate provided by the embodiment of the invention
  • 2c is a schematic diagram of forming a gate insulating layer in a manufacturing process of an array substrate according to an embodiment of the invention
  • 2d is a schematic view showing formation of an oxide semiconductor layer and a second metal layer in the manufacturing process of the array substrate provided by the embodiment of the invention
  • 2 e is a schematic view showing formation of an oxide semiconductor pattern, a data line, and a source in a process of manufacturing an array substrate according to an embodiment of the invention
  • 2f is a schematic diagram of forming a passivation layer in the manufacturing process of the array substrate provided by the embodiment of the invention.
  • 2g is a schematic diagram of a pattern of forming a passivation layer and a second pixel electrode in the fabrication process of the array substrate provided by the embodiment of the invention.
  • Embodiments of the present invention provide an array substrate that can be applied to an IPS type or FFS type liquid crystal display.
  • the array substrate includes a plurality of sub-pixel units formed on the base substrate, and each of the sub-pixel units includes a thin film transistor, a first pixel electrode, and a second pixel electrode.
  • the array substrate further includes a common electrode line and a scan line corresponding to each row of sub-pixel units, and a data line corresponding to each column of sub-pixel units.
  • the first pixel electrode 101 is directly formed on the base substrate 100 and is formed by etching a transparent electrode layer.
  • the common electrode line 102, the scan line (not shown), and the gate 103 of the thin film transistor are located in the same layer, both of which are formed by etching the first metal layer, and the first metal layer is formed on the transparent electrode layer. It is also considered that the common electrode line 102, the scanning line, and the gate electrode 103 are formed by etching a two-layer structure of the transparent electrode layer and the first metal layer, and are also formed on the base substrate 100.
  • the active layer 105 of the thin film transistor is positioned above the gate 103, and a gate insulating layer 104 is formed between the active layer 105 and the gate 103. Further, the first pixel electrode 101, the common electrode line 102, and the scanning line are also covered by the gate insulating layer 104.
  • the active layer 105 and the second pixel electrode 106 are located in the same layer.
  • the material of the active layer 105 is an oxide semiconductor
  • the material of the second pixel electrode 106 is a plasma-treated oxide semiconductor.
  • a source 107 of the thin film transistor is formed on the active layer 105, and a data line (not shown) is located in the same layer as the source 107, and is formed by etching the second metal layer.
  • the data line, the source 107, and the active layer 105 A passivation layer 108 is also overlaid thereon.
  • the active layer 105 and the second pixel electrode 106 are located in the same layer, and the material of the second pixel electrode 106 is a plasma-treated oxide semiconductor, and the material of the active layer 105. It is an oxide semiconductor.
  • an oxide semiconductor pattern including the active layer 105 and the second pixel electrode pattern may be formed in the same mask patterning process.
  • the second pixel electrode pattern is formed by plasma processing the second pixel electrode pattern to increase the electrical conductivity of the oxide semiconductor so that the electrical conductivity reaches the requirements of the pixel electrode. Therefore, in the manufacturing process of the array substrate, the number of times of the mask patterning process can be reduced, thereby solving the technical problem that the manufacturing process of the existing array substrate is too complicated, and the production efficiency can be improved and the production cost can be reduced.
  • the active layer 105 and the second pixel electrode 106 are directly connected, so that the active layer 105 is directly connected to the second pixel electrode 106, so that the signal of the data line is directly written on the second pixel electrode 106. Therefore, it is not necessary to form a drain using a metal material. Therefore, the array substrate provided by the embodiment of the invention further increases the aperture ratio of the sub-pixel unit.
  • the embodiment of the invention further provides a method for manufacturing the above array substrate, which comprises the following steps:
  • S1 forming a first pixel electrode, a scan line, a common electrode line, and a gate of the thin film transistor on the base substrate.
  • the scan line, the common electrode line, the gate electrode and the first pixel electrode are formed in a masking process, specifically:
  • the transparent electrode layer 110 and the first metal layer 120 are sequentially formed on the base substrate 100.
  • the transparent electrode layer 110 may be made of indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), etc., and may have a thickness of 100 to between.
  • the first metal layer 120 may be made of aluminum (Al), molybdenum (Mo), copper (Cu), silver (Ag), etc., and may have a thickness of 3000 between.
  • S12 covering the first metal layer with a photoresist, and exposing and developing using a halftone mask, a gray tone mask or a single slit mask.
  • S13 etching the first metal layer and the transparent electrode layer to form a scan line, a common electrode line, and a gate of the thin film transistor.
  • the scan line, the common electrode line, and the gate are both formed by etching a two-layer structure composed of a first metal layer and a transparent electrode layer.
  • the shape of the first pixel electrode is also formed, but the first pixel electrode is still covered with the first metal layer.
  • the photoresist of the corresponding region of the first pixel electrode is completely removed by the ashing process.
  • scanning lines, public electricity The photoresist in the corresponding area of the polar line and the gate is also partially removed.
  • the first metal electrode layer is formed by etching away the first metal layer covered on the first pixel electrode.
  • the first pixel electrode 101, the scan line, the common electrode line 102, and the gate electrode 103 can be formed through the first mask patterning process.
  • the material of the gate insulating layer 104 may be silicon oxide (SiOx), silicon nitride (SiNx) or a mixture of the two, and the thickness may be from 2000 to 2,000. between.
  • S3 forming an oxide semiconductor pattern, a data line, and a source of the thin film transistor on the gate insulating layer.
  • the oxide semiconductor pattern comprises an active layer of the thin film transistor and a second pixel electrode pattern.
  • the oxide semiconductor pattern, the data line and the source may also be formed in a masking process, specifically:
  • an oxide semiconductor layer 150 and a second metal layer 170 are sequentially formed on the gate insulating layer 104.
  • the oxide semiconductor layer 150 may be a transparent oxide semiconductor material such as ZnO-based, SnO 2 -based, or In 2 O 3 -based, and may have a thickness of 200 to between.
  • the material and thickness of the second metal layer 170 may be the same as the first metal layer.
  • S32 covering the second metal layer with a photoresist, and exposing and developing using a halftone mask, a gray tone mask or a single slit mask.
  • the formed data lines and sources are both formed by etching of the second metal layer. Further, at this time, the shape of the oxide semiconductor pattern is also formed, but the oxide semiconductor pattern is still covered with the second metal layer.
  • An oxide semiconductor pattern can be formed by etching away the second metal layer covered on the oxide semiconductor pattern.
  • an oxide semiconductor pattern, a data line, and a source 107 are formed through a second mask patterning process.
  • the oxide semiconductor pattern comprises an active layer 105 of the thin film transistor and a second pixel electrode pattern 160.
  • the material of the passivation layer 108 may be silicon oxide (SiOx), silicon nitride (SiNx) or a mixture of the two, and the thickness may be from 2000 to 2,000. between.
  • S5 etching the passivation layer to expose the second pixel electrode pattern in the oxide semiconductor pattern. Specifically include:
  • S51 covering the passivation layer with a photoresist, and exposing and developing using a mask.
  • the passivation layer of the corresponding region of the second pixel electrode pattern is etched by using sulfur hexafluoride (SF 6 ) to expose the second pixel electrode pattern.
  • SF 6 sulfur hexafluoride
  • a pattern of the passivation layer 108 is formed and the second pixel electrode pattern 160 is exposed.
  • the second pixel electrode pattern can be plasma-treated by using SF 6 , N 2 , Ar, He, or the like as a plasma to increase the conductivity of the transparent metal oxide semiconductor so that the electrical conductivity reaches the requirements of the pixel electrode, thereby forming The second pixel electrode.
  • the SF 6 may etch the passivation layer or plasma the second pixel electrode pattern, and in order to improve the effect of the plasma treatment, N 2 , Ar, and He are added to the SF 6 .
  • the array substrate provided by the embodiment of the present invention can be formed through the above steps.
  • the manufacturing method of the array substrate provided by the embodiment of the present invention only three mask patterning processes are used, thereby solving the technical problem that the existing array substrate manufacturing process is too complicated, and the production efficiency and the production cost can be improved.
  • the first pixel electrode may be formed by a single mask patterning process
  • the scan line, the common electrode line, and the gate may be formed by a single mask patterning process. Then, the reticle patterning process is used four times in the manufacturing process of the array substrate, but the manufacturing process of the array substrate can be effectively simplified compared to the six-time mask patterning process in the prior art.

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Abstract

一种阵列基板及其制造方法，属于显示技术领域，解决了现有的阵列基板的制造过程过于复杂的技术问题。该阵列基板包括形成于衬底基板（100）上的多个子像素单元，每个所述子像素单元中包括薄膜晶体管和第二像素电极（106）；薄膜晶体管有源层（105）的材料为氧化物半导体；所述第二像素电极（106）的材料为经等离子体处理的氧化物半导体。上述技术方案可用于IPS型或FFS型液晶显示器中。

Description

阵列基板及其制造方法
本申请要求享有2015年8月10日提交的名称为“阵列基板及其制造方法”的中国专利申请CN 201510487237.1的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，具体地说，涉及一种阵列基板及其制造方法。
背景技术
随着显示技术的发展，液晶显示器已经成为最为常见的显示装置。
平面转换(In-Plane Switching，简称IPS)技术及边缘场开关(Fringe Field Switching，简称FFS)技术中，第一像素电极和第二像素电极均设置在阵列基板上，从而能够以水平方向的电场驱动液晶，因此具有宽视角，高亮度，高对比度，快速响应等优点。
现有的IPS型、FFS型液晶显示器的阵列基板，需要依次利用掩膜版构图工艺形成栅极金属层、有源层、源漏极金属层、第一透明电极层、过孔图案、第二透明电极层，共需要进行六次掩膜版构图工艺，因此存在制造过程过于复杂的技术问题。
发明内容
本发明的目的在于提供一种阵列基板及其制造方法，以解决现有的阵列基板的制造过程过于复杂的技术问题。
本发明提供一种阵列基板的制造方法，包括：
在衬底基板上形成扫描线、公共电极线、薄膜晶体管的栅极和第一像素电极；
覆盖一层栅极绝缘层；
在所述栅极绝缘层上形成氧化物半导体图形、数据线和薄膜晶体管的源极，其中，所述氧化物半导体图形包括薄膜晶体管的有源层和第二像素电极图形；
覆盖一层钝化层；
对所述钝化层进行蚀刻，露出所述氧化物半导体图形中的第二像素电极图形；
对所述氧化物半导体图形中的第二像素电极图形进行等离子体处理，形成第二像素电极。
进一步的是，对所述氧化物半导体图形中的第二像素电极图形进行等离子体处理，具体为：
利用SF6、N2、Ar或He，对所述氧化物半导体图形中的第二像素电极图形进行等离子体处理。
优选的是，在衬底基板上形成扫描线、公共电极线、薄膜晶体管的栅极和第一像素电极，具体为：
在衬底基板上依次形成透明电极层和第一金属层；
在所述第一金属层上覆盖光刻胶，并利用半色调掩膜版、灰色调掩模版或单狭缝掩膜版进行曝光、显影；
对所述第一金属层和所述透明电极层进行蚀刻，形成扫描线、公共电极线和薄膜晶体管的栅极；
对光刻胶进行灰化；
对所述第一金属层进行蚀刻，形成第一像素电极；
剥离剩余的光刻胶。
优选的是，在所述栅极绝缘层上形成氧化物半导体图形、数据线和薄膜晶体管的源极，具体为：
在栅极绝缘层上依次形成氧化物半导体层和第二金属层；
在所述第二金属层上覆盖光刻胶，并利用半色调掩膜版、灰色调掩模版或单狭缝掩膜版进行曝光、显影；
对所述第二金属层和所述氧化物半导体层进行蚀刻，形成数据线和薄膜晶体管的源极；
对光刻胶进行灰化；
对所述第二金属层进行蚀刻，形成氧化物半导体图形；
剥离剩余的光刻胶。
优选的是，对所述钝化层进行蚀刻，露出所述氧化物半导体图形中的第二像素电极图形，具体为：
在所述钝化层上覆盖光刻胶，并利用掩膜版进行曝光、显影；
对所述钝化层进行蚀刻，露出所述氧化物半导体图形中的第二像素电极图形；
剥离剩余的光刻胶。
进一步的是，对所述钝化层进行蚀刻，具体为：
利用六氟化硫，对所述钝化层进行蚀刻。
本发明还提供一种阵列基板，包括形成于衬底基板上的多个子像素单元，每个所述子像素单元中包括薄膜晶体管和第二像素电极；
所述薄膜晶体管的有源层和所述第二像素电极位于同一图层；
所述有源层的材料为氧化物半导体，所述第二像素电极的材料为经等离子体处理的氧化物半导体。
进一步的是，所述薄膜晶体管的栅极形成于所述衬底基板上，所述有源层位于所述栅极上方，且所述有源层与所述栅极之间形成有栅极绝缘层；
所述薄膜晶体管的源极形成于所述有源层上。
进一步的是，该阵列基板还包括公共电极线、扫描线和数据线；
所述公共电极线和所述扫描线均与所述栅极位于同一图层；
所述数据线与所述源极位于同一图层。
进一步的是，该阵列基板还包括形成于所述衬底基板上的第一像素电极。
本发明带来了以下有益效果：本发明提供的阵列基板中，有源层和第二像素电极位于同一图层，并且第二像素电极的材料是经等离子体处理的氧化物半导体，而有源层的材料是氧化物半导体。在阵列基板的制造过程中，可以在同一次掩膜版构图工艺中形成包括有源层和第二像素电极图形的氧化物半导体图形。再对该第二像素电极图形进行等离子体处理，以提高氧化物半导体的电导率，使其电导率达到像素电极的要求，即可形成第二像素电极。因此，本发明提供的技术方案能够减少掩膜版构图工艺的次数，从而解决了现有的阵列基板的制造过程过于复杂的技术问题，并且能够提高生产效率，降低生产成本。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是本发明实施例提供的阵列基板的示意图；
图2a是发明实施例提供的阵列基板的制造过程中形成透明电极层和第一金属层的示意图；
图2b是发明实施例提供的阵列基板的制造过程中形成扫描线、公共电极线、栅极和第一像素电极的示意图；
图2c是发明实施例提供的阵列基板的制造过程中形成栅极绝缘层的示意图；
图2d是发明实施例提供的阵列基板的制造过程中形成氧化物半导体层和第二金属层的示意图；
图2e是发明实施例提供的阵列基板的制造过程中形成氧化物半导体图形、数据线和源极的示意图；
图2f是发明实施例提供的阵列基板的制造过程中形成钝化层的示意图；
图2g是发明实施例提供的阵列基板的制造过程中形成钝化层和第二像素电极的图形的示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
本发明实施例提供一种阵列基板，可应用于IPS型或FFS型液晶显示器中。该阵列基板包括形成于衬底基板上的多个子像素单元，每个子像素单元中包括薄膜晶体管、第一像素电极和第二像素电极。该阵列基板还包括与每行子像素单元对应的公共电极线和扫描线，以及与每列子像素单元对应的数据线。
如图1所示，第一像素电极101直接形成于衬底基板100上，是由透明电极层经过蚀刻形成的。
公共电极线102、扫描线(图中未示出)和薄膜晶体管的栅极103位于同一图层，都是由第一金属层经过蚀刻形成的，而第一金属层形成于透明电极层上。也可以认为，公共电极线102、扫描线和栅极103是由透明电极层和第一金属层的双层结构经过蚀刻形成的，并且也是形成于衬底基板100上的。
薄膜晶体管的有源层105位于栅极103上方，且有源层105与栅极103之间形成有栅极绝缘层104。此外，第一像素电极101、公共电极线102、扫描线也都被栅极绝缘层104所覆盖。
本实施例中，有源层105和第二像素电极106位于同一图层。其中，有源层105的材料为氧化物半导体，第二像素电极106的材料为经等离子体处理的氧化物半导体。
薄膜晶体管的源极107形成于有源层105上，数据线(图中未示出)与源极107位于同一图层，均是由第二金属层经过蚀刻形成的。此外，数据线、源极107和有源层105 上还覆盖有钝化层108。
本发明实施例提供的阵列基板中，有源层105和第二像素电极106位于同一图层，并且第二像素电极106的材料是经等离子体处理的氧化物半导体，而有源层105的材料是氧化物半导体。在阵列基板的制造过程中，可以在同一次掩膜版构图工艺中形成包括有源层105和第二像素电极图形的氧化物半导体图形。再对该第二像素电极图形进行等离子体处理，以提高氧化物半导体的电导率，使其电导率达到像素电极的要求，即可形成第二像素电极106。因此，在阵列基板的制造过程中，能够减少掩膜版构图工艺的次数，从而解决了现有的阵列基板的制造过程过于复杂的技术问题，并且能够提高生产效率，降低生产成本。
另外，本实施例中，有源层105和第二像素电极106直接连接，所以有源层105中与第二像素电极106直接相连，使数据线的信号直接写入第二像素电极106上，因此不需要使用金属材料形成漏极。因此，本发明实施例提供的阵列基板还提高了子像素单元的开口率。
本发明实施例还相应的提供了上述阵列基板的制造方法，包括以下步骤：
S1：在衬底基板上形成第一像素电极、扫描线、公共电极线和薄膜晶体管的栅极。
扫描线、公共电极线、栅极和第一像素电极在一次掩膜版构图工艺中形成，具体为：
S11：如图2a所示，在衬底基板100上依次形成透明电极层110和第一金属层120。
透明电极层110可采用氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铝锌(AZO)等材料，厚度可以在100至
Figure PCTCN2015088713-appb-000001
之间。第一金属层120可采用铝(Al)、钼(Mo)、铜(Cu)、银(Ag)等材料，厚度可以在3000至
Figure PCTCN2015088713-appb-000002
之间。
S12：在第一金属层上覆盖光刻胶，并利用半色调掩膜版、灰色调掩模版或单狭缝掩膜版进行曝光、显影。
曝光、显影后，一部分区域的光刻胶全部保留，对应于扫描线、公共电极线和栅极；一部分区域的光刻胶被部分去除，对应于第一像素电极；其余区域的光刻胶被全部去除。
S13：对第一金属层和透明电极层进行蚀刻，形成扫描线、公共电极线、薄膜晶体管的栅极。
扫描线、公共电极线和栅极均是由第一金属层和透明电极层组成的双层结构经过蚀刻形成的。另外，此时第一像素电极的形状也已形成，但第一像素电极上仍覆盖有第一金属层。
S14：对光刻胶进行灰化。
利用灰化工艺，将第一像素电极对应区域的光刻胶全部去除。同时，扫描线、公共电 极线和栅极对应区域的光刻胶也会被部分去除。
S15：对第一金属层进行蚀刻，形成第一像素电极。
将第一像素电极上覆盖的第一金属层蚀刻掉，即可形成第一像素电极层。
S16：剥离剩余的光刻胶。
如图2b所示，经过第一次掩膜版构图工艺，即可形成第一像素电极101、扫描线、公共电极线102和栅极103。
S2：如图2c所示，在完成上述步骤的基础上，覆盖一层栅极绝缘层104。
栅极绝缘层104的材料可以采用氧化硅(SiOx)、氮化硅(SiNx)或二者的混合物，厚度可以在2000至
Figure PCTCN2015088713-appb-000003
之间。
S3：在栅极绝缘层上形成氧化物半导体图形、数据线和薄膜晶体管的源极。
其中，氧化物半导体图形包括薄膜晶体管的有源层和第二像素电极图形。本实施例中，氧化物半导体图形、数据线和源极也可以在一次掩膜版构图工艺中形成，具体为：
S31：如图2d所示，在栅极绝缘层104上依次形成氧化物半导体层150和第二金属层170。
氧化物半导体层150可以采用ZnO基、SnO2基、In2O3基等透明氧化物半导体材料，厚度可以在200至
Figure PCTCN2015088713-appb-000004
之间。第二金属层170的材料、厚度可以与第一金属层相同。
S32：在第二金属层上覆盖光刻胶，并利用半色调掩膜版、灰色调掩模版或单狭缝掩膜版进行曝光、显影。
曝光、显影后，一部分区域的光刻胶全部保留，对应于数据线和源极；一部分区域的光刻胶被部分去除，对应于氧化物半导体图形；其余区域的光刻胶被全部去除。
S33：对第二金属层和氧化物半导体层进行蚀刻，形成数据线和薄膜晶体管的源极。
所形成的数据线和源极均是由第二金属层经过蚀刻形成的。另外，此时氧化物半导体图形的形状也已形成，但氧化物半导体图形上仍覆盖有第二金属层。
S34：对光刻胶进行灰化。
利用灰化工艺，将氧化物半导体图形对应区域的光刻胶全部去除。同时，数据线和源极对应区域的光刻胶也会被部分去除。
S35：对第二金属层进行蚀刻，形成氧化物半导体图形。
将氧化物半导体图形上覆盖的第二金属层蚀刻掉，即可形成氧化物半导体图形。
S36：剥离剩余的光刻胶。
如图2e所示，经过第二次掩膜版构图工艺，即可形成氧化物半导体图形、数据线和源极107。其中，氧化物半导体图形包括薄膜晶体管的有源层105和第二像素电极图形 160。
S4：如图2f所示，在完成上述步骤的基础上，覆盖一层钝化层108。
钝化层108的材料可以采用氧化硅(SiOx)、氮化硅(SiNx)或二者的混合物，厚度可以在2000至
Figure PCTCN2015088713-appb-000005
之间。
S5：对钝化层进行蚀刻，露出氧化物半导体图形中的第二像素电极图形。具体包括：
S51：在钝化层上覆盖光刻胶，并利用掩膜版进行曝光、显影。
曝光、显影后，一部分区域光刻胶被去除，对应于第二像素电极图形，其余区域的光刻胶保留。
S52：对钝化层进行蚀刻，露出氧化物半导体图形中的第二像素电极图形。
利用六氟化硫(SF6)，对第二像素电极图形对应区域的钝化层进行蚀刻，使第二像素电极图形暴露出来。
S53：剥离剩余的光刻胶。
如图2g所示，经过第三次掩膜版构图工艺，即可形成钝化层108的图形，并且露出第二像素电极图形160。
S6：对氧化物半导体图形中的第二像素电极图形进行等离子体处理，形成第二像素电极。
可以利用SF6、N2、Ar、He等作为等离子体，对第二像素电极图形进行等离子体处理，以提高透明金属氧化物半导体的电导率，使其电导率达到像素电极的要求，从而形成第二像素电极。其中，SF6既可以对钝化层进行蚀刻，也可以对第二像素电极图形进行等离子体处理，并且为了提高等离子体处理的效果，在SF6中加入了N2、Ar、He。
如图1所示，经过上述步骤，即可形成本发明实施例提供的阵列基板。本发明实施例提供的阵列基板的制造方法中，仅使用了三次掩膜版构图工艺，从而解决了现有的阵列基板的制造过程过于复杂的技术问题，并且能够提高生产效率，降低生产成本。
应当说明的是，在其他实施方式中，也可以单独通过一次掩膜版构图工艺形成第一像素电极，再单独通过一次掩膜版构图工艺形成扫描线、公共电极线和栅极。则阵列基板的制造过程中共使用四次掩膜版构图工艺，但相比于现有技术中使用六次掩膜版构图工艺，仍然能够有效简化阵列基板的制造过程。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (10)

  1. 一种阵列基板的制造方法，包括：
    在衬底基板上形成扫描线、公共电极线、薄膜晶体管的栅极和第一像素电极；
    覆盖一层栅极绝缘层；
    在所述栅极绝缘层上形成氧化物半导体图形、数据线和薄膜晶体管的源极，其中，所述氧化物半导体图形包括薄膜晶体管的有源层和第二像素电极图形；
    覆盖一层钝化层；
    对所述钝化层进行蚀刻，露出所述氧化物半导体图形中的第二像素电极图形；
    对所述氧化物半导体图形中的第二像素电极图形进行等离子体处理，形成第二像素电极。
  2. 根据权利要求1所述的方法，其中，对所述氧化物半导体图形中的第二像素电极图形进行等离子体处理，具体为：
    利用SF6、N2、Ar或He，对所述氧化物半导体图形中的第二像素电极图形进行等离子体处理。
  3. 根据权利要求1所述的方法，其中，在衬底基板上形成扫描线、公共电极线、薄膜晶体管的栅极和第一像素电极，具体为：
    在衬底基板上依次形成透明电极层和第一金属层；
    在所述第一金属层上覆盖光刻胶，并利用半色调掩膜版、灰色调掩模版或单狭缝掩膜版进行曝光、显影；
    对所述第一金属层和所述透明电极层进行蚀刻，形成扫描线、公共电极线和薄膜晶体管的栅极；
    对光刻胶进行灰化；
    对所述第一金属层进行蚀刻，形成第一像素电极；
    剥离剩余的光刻胶。
  4. 根据权利要求1所述的方法，其中，在所述栅极绝缘层上形成氧化物半导体图形、数据线和薄膜晶体管的源极，具体为：
    在栅极绝缘层上依次形成氧化物半导体层和第二金属层；
    在所述第二金属层上覆盖光刻胶，并利用半色调掩膜版、灰色调掩模版或单狭缝掩膜版进行曝光、显影；
    对所述第二金属层和所述氧化物半导体层进行蚀刻，形成数据线和薄膜晶体管的源极；
    对光刻胶进行灰化；
    对所述第二金属层进行蚀刻，形成氧化物半导体图形；
    剥离剩余的光刻胶。
  5. 根据权利要求1所述的方法，其中，对所述钝化层进行蚀刻，露出所述氧化物半导体图形中的第二像素电极图形，具体为：
    在所述钝化层上覆盖光刻胶，并利用掩膜版进行曝光、显影；
    对所述钝化层进行蚀刻，露出所述氧化物半导体图形中的第二像素电极图形；
    剥离剩余的光刻胶。
  6. 根据权利要求5所述的方法，其中，对所述钝化层进行蚀刻，具体为：
    利用六氟化硫，对所述钝化层进行蚀刻。
  7. 一种阵列基板，包括形成于衬底基板上的多个子像素单元，每个所述子像素单元中包括薄膜晶体管和第二像素电极；
    所述薄膜晶体管的有源层和所述第二像素电极位于同一图层；
    所述有源层的材料为氧化物半导体，所述第二像素电极的材料为经等离子体处理的透明氧化物半导体。
  8. 根据权利要求7所述的阵列基板，其中，所述薄膜晶体管的栅极形成于所述衬底基板上，所述有源层位于所述栅极上方，且所述有源层与所述栅极之间形成有栅极绝缘层；
    所述薄膜晶体管的源极形成于所述有源层上。
  9. 根据权利要求8所述的阵列基板，其中，还包括公共电极线、扫描线和数据线；
    所述公共电极线和所述扫描线均与所述栅极位于同一图层；
    所述数据线与所述源极位于同一图层。
  10. 根据权利要求7所述的阵列基板，其中，还包括形成于所述衬底基板上的第一像素电极。
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