WO2017021372A1

WO2017021372A1 - Organic optoelectronic component and method for producing an organic optoelectronic component

Info

Publication number: WO2017021372A1
Application number: PCT/EP2016/068335
Authority: WO
Inventors: Michael Popp; Richard Baisl
Original assignee: Osram Oled Gmbh
Priority date: 2015-08-03
Filing date: 2016-08-01
Publication date: 2017-02-09
Also published as: DE102015112681A1

Abstract

The invention relates to an organic optoelectronic component (1) in different embodiments. The organic optoelectronic component (1) comprises: a substrate having at least one first electrode (20); a dielectric insulator layer structure which is arranged on the substrate and which is in direct physical contact with the first electrode (20); a dielectric barrier layer (40) which is formed directly on the insulator layer structure and at least partially directly on the first electrode (20) and which covers the lateral side surfaces of the insulator layer structure; an organic functional layer structure (22) which is formed over the first electrode (20) and on and/or next to the dielectric barrier layer (40); and a second electrode (23) which is formed over the organic functional layer structure (22).

Description

ORGANIC OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN ORGANIC OPTOELECTRONIC COMPONENT

DESCRIPTION

The invention relates to an organic optoelectronic component and to a method for producing an organic optoelectronic component.

Organic-based optoelectronic components,

so-called organic optoelectronic components are finding increasing popularity. For example, organic light-emitting diodes (organic light-emitting diode (OLED) are increasingly being used in general lighting, for example as area light sources.

An organic optoelectronic component, for example an OLED, may comprise an anode and a cathode and, between them, an organic functional layer system. The organic functional layer system may include one or more emitter layers in which electromagnetic radiation is generated, a charge carrier pair generation layer structure of two or more each

Charge pair generation charge carrier pair generation layers (CGL), and one or more electron block layers, also referred to as hole transport layer (HTL), and one or more hole blocker layers, also referred to as electron transport layers ("electron transport layer ^w - ETL) to direct the flow of current The individual layers may be laterally structured.

In order to achieve uniform and high efficiency over the entire area of a large-area OLED, a uniform current distribution over the corresponding area of the OLED is required. Thin transparent electrodes are often limited in their electrical conductivity and then have one for large area applications

insufficient current conductivity, which in the operation of the OLED, for example, to a laterally uneven luminance and thus due to a laterally uneven

Illuminating picture can lead. To avoid this, thin metallic busbars are formed on the respective electrodes. These busbars are highly conductive lead structures and increase current carrying capacity compared to using a corresponding electrode without busbars. The busbars contribute to a sufficient

Power distribution over the entire surface of the OLED at, resulting in a uniform luminance and thus to a

even lighting can contribute. The busbars can be formed for example by means of sputtering or in a PVD method and one or more subsequent lithography processes. The busbars may include or be formed of metal layer structures such as alternating layers of Cr-Al-Cr or Mo-Al-Mo, or single layers of, for example, copper. These structures are coated with an organic insulator, in particular a resist, for example with synthetic resin, in order to effect a charge carrier injection of the

corresponding electrode in the organic functional layers exclusively by the corresponding electrode. However, this has the disadvantage that due to the manufacturing process decomposition products of the organic insulator from important for the radiation properties of the OLED areas, in particular in the organic

functional layers, can penetrate, causing the

Lifespan of OLED can be reduced and / or a Leuchtflächeneinengung and / or a pixel shrinkage can take place, in which the luminous surface of the OLED over time becomes darker inwardly from the edge.

An object of the invention is to provide an organic

Optoelectronic device to provide a uniform luminance distribution and a uniform Luminous image has over its optically active surface and has a long life.

An object of the invention is to provide a method for

Producing an organic optoelectronic device to provide the easy and / or inexpensive

is feasible and / or that contributes to that

organic optoelectronic device in operation has a uniform luminance distribution and a uniform luminous image over its optically active surface and has a long life.

The object is achieved in accordance with an aspect of the invention by an organic optoelectronic component having a substrate which has at least one first electrode, a dielectric insulator layer structure which is arranged on the substrate and which is in direct physical contact with the first electrode, a dielectric Barrier layer, which is formed directly on the insulator layer structure and at least partially directly on the first electrode and the lateral side surfaces of the

Insulator layer structure covered, an organic

functional layered structure, over the first

Electrode and on the dielectric barrier layer

and a second electrode formed over the organic functional layer structure.

Thus, the dielectric barrier layer and the

Substrate in cooperation completely enclose and / or embed the insulator layer structure, at least in the region of the organic functional layer structure.

The planar overmolding of the insulator layer structure reduces and / or prevents leakage of decomposition products of the material of the insulator layer structure during production of the organic optoelectronic component and during operation of the organic optoelectronic component. In particular, be

Escapes of decomposition products of the material of An insulator layer structure optimized due to, for example, a transparent first electrode

Process control incurred, reduced and / or

prevented. This contributes to the fact that, for example, in the case of an OLED, a luminance over the active area and a luminous image are uniform and that a narrowing of the luminous field is reduced and / or prevented. This contributes to a particularly high lifetime of the organic optoelectronic component.

In addition, a robustness of the organic

Optoelectronic device can be increased because on the substrate existing particles of the dielectric

Barrier layer can be enclosed and then less or no longer harmful, resulting in a yield in the production of organic optoelectronic

Component can be increased.

The material having the insulator layer structure or of which the insulator layer structure is formed may be, for example, an organic material, in particular, an organic resist, in particular, a synthetic resin. The material of the dielectric barrier layer is designed to be electrically insulating. However, the dielectric barrier layer may be formed so thin that its electrical function, in particular its electrically insulating function is not or at least approximately not given. In particular, the dielectric barrier layer may be formed so thin that at least theoretically charge carriers can tunnel through them unhindered or at least almost unhindered. The dielectric barrier layer thus essentially serves to prevent the outgassing of

Decomposition substances from the insulator layer structure and not for electrically insulating the insulator layer structure.

According to a development, the substrate has a first contact section which is electrically connected to the second

Electrode is coupled and the for electrical contacting the second electrode is used. The dielectric

An insulator layer structure has a first isolation barrier that electrically isolates the first electrode from the first contact portion. The dielectric barrier layer is formed directly on the first isolation barrier and covers lateral side surfaces of the first

Isolation barrier. Thus, the first isolation barrier is completely enclosed by the substrate and the dielectric barrier layer, at least in the region of the organic functional layer structure. This helps to prevent decomposition materials of the material from outgassing the first isolation barrier and penetrating into the overlying and / or adjacent organic functional layer structure.

Optionally, the first contact portion may be completely or partially covered by the dielectric barrier layer. If appropriate, the dielectric barrier layer is formed so thinly over the first contact section that, when the first contact section is electrically contacted via the dielectric barrier layer, charge carriers from the first contact section through the dielectric contact layer

Barrier layer towards the corresponding electrical

Can tunnel contact. Covering the first

Contact portion with the dielectric barrier layer may help to reduce or prevent oxidation of the first contact portion.

The material having the first isolation barrier or of which the first isolation barrier is formed may, for example, be an organic material, in particular an organic resist, in particular synthetic resin. The material of the first insulation barrier is designed to be electrically insulating.

According to a development, the substrate has a

Power distribution structure, which directly on the first

Electrode is formed. The dielectric Insulator layer structure has insulator layers formed directly on the power distribution structure and covering the lateral side surfaces of the power distribution structure. The dielectric barrier layer is formed directly on the insulator layers and covers lateral

Side surfaces of the insulator layers. The

Current distribution structure serves to charge carriers

evenly distributed over the entire surface of the first electrode. The material of the power distribution structure has a high electrical conductivity. The

Insulator layers serve to prevent

Charge carriers penetrate directly from the current distribution structure in the organic functional layer structure without the first electrode to go through. The power distribution structure may include one or more busbars and / or busbars each covered by one of the insulator layers. Thus, the current distribution structure is covered by the insulator layers and the insulator layers are of the first electrode and the dielectric

Barrier layer completely enclosed, at least in the area of the organic functional layer structure. This helps to prevent decomposition materials of the material of the insulator layers from outgassing and penetrating into the overlying and / or adjacent organic functional layer structure.

The material having the insulator layers or of which the insulator layers are formed may be, for example, an organic material, in particular an organic resist, in particular synthetic resin. The material of

Insulator layers is formed electrically insulating.

The dielectric barrier layer covering the insulator layers may be made so thin as to be

has no electrical function, in particular not electrically insulating acts, and that at least theoretically charge carriers can tunnel through the dielectric barrier layer. The dielectric barrier layer has thus substantially the effect of preventing decomposition of the material of the insulator layers in the surrounding organic functional layer structure

can penetrate.

According to a development, the substrate has a second contact section, which is electrically coupled to the first electrode and which serves for electrically contacting the first electrode. A second isolation barrier may be formed between the second contact section and the organic functional layer structure and / or the second electrode. The second isolation barrier may be covered by the dielectric barrier layer, whereby outgassing of decomposition substances from the second

Isolation barrier can be prevented and / or reduced.

Optionally, the second contact portion may be completely or partially covered by the dielectric barrier layer. Optionally, the dielectric barrier layer is made so thin above the second contact section that, when the second contact section is electrically contacted via the dielectric barrier, charge carriers from the second contact section pass through the dielectric layer

Barrier layer towards the corresponding electrical

Can tunnel contact. Covering the second

Contact portion with the dielectric barrier layer may help to reduce or prevent oxidation of the second contact portion.

The material having the second isolation barrier or of which the second isolation barrier is formed may be, for example, an organic material.

in particular an organic resist, in particular synthetic resin. The material of the second isolation barrier is designed to be electrically insulating. According to a development, the dielectric

Barrier layer over the entire first electrode

educated. Over the first electrode, the dielectric barrier layer is formed so thin that in the operation of the organic optoelectronic device on the

dielectric barrier layer can tunnel charge carriers from the first electrode through the dielectric barrier layer to the organic functional layer structure or in the opposite direction. The covering of the first electrode with the dielectric barrier layer may contribute to the formation of the dielectric

Barrier layer is particularly simple, since the dielectric barrier layer has little or no structure.

According to a development, the dielectric

Barrier layer formed over the entire substrate. The substrate has the first electrode and optionally the first and / or the second contact section and / or optionally the first and / or second insulation barrier and / or optionally the current distribution structure and the

Insulator layers on. In other words, the substrate may be understood as the basis on which the organic functional layer structure is formed. The first electrode, the contact portions, the insulator layers and / or the isolation barriers can each via

and / or be formed on a support. Alternatively, the first electrode itself may serve as a carrier. The

Covering the substrate with the dielectric barrier layer may help to make the formation of the dielectric barrier layer particularly easy because the dielectric barrier layer is easily formed over the entire area and does not need to be patterned. According to a development, the dielectric

Barrier layer has a thickness of from 0.1 nm to 20 nm,

for example, from 1 nm to 10 nm, for example from 2 nm to 7 nm. This contributes to the dielectric Barrier layer no or at least only one

has negligible electrical puncture. This makes it possible to form the dielectric barrier layer over the entire surface over the first electrode and / or over the entire surface over the substrate.

According to a development, the dielectric

Barrier layer A1 ₂ 0 ₃ , Ti0 ₂ , ZrQx, ZnQx, HfOx and / or Alucone, Titanocone or a self-oxygenating monolayer (Seif Assembling Mono layer - SAM) on or is formed from it.

The object is achieved according to a further aspect of the invention by a method for producing an organic optoelectronic component. In the method, the substrate having at least the first electrode,

educated. The dielectric insulator layer structure is formed on the substrate in direct physical contact with the first electrode. The dielectric

Barrier layer is formed directly on the insulator layer structure and at least partially directly on the first electrode so that they lateral side surfaces of the

Insulator layer structure covered. The organic functional layer structure is formed over the first electrode and on the dielectric barrier layer. The second

Electrode becomes functional over the organic

Layer structure formed.

The aforementioned refinements and / or advantages of the organic optoelectronic component can be readily transferred to the method for producing the organic optoelectronic component.

Since the dielectric barrier layer is formed prior to application of the organic functional layer structure, the substrate may be deposited prior to application of the dielectric

Barrier layer are heated and / or the dielectric barrier layer can be formed at a high temperature According to a development, the substrate is formed so that it has the first contact portion which is electrically coupled to the second electrode and the

electrically contacting the second electrode is used. The dielectric insulator layer structure is formed to have the first isolation barrier electrically insulating the first electrode from the first contact portion. The dielectric barrier slab is formed directly on the first isolation barrier so as to cover lateral side surfaces and a vertical surface of the first isolation barrier.

According to a development, the substrate is formed so that it has the current distribution structure which is formed directly on the first electrode. the dielectric

Insulator layer structure is formed so that they

Has insulator layers directly on the

Power distribution structure are formed and cover the lateral side surfaces of the power distribution structure. The dielectric barrier layer is directly on the

Insulator layers are formed so that they are lateral

Side surfaces and vertical surfaces of the insulator layers covered. According to a development, the dielectric

Barrier layer over the entire first electrode

educated .

According to a development, the dielectric

Barrier layer formed over the entire substrate.

According to a development, the dielectric

Barrier layer formed in an ALD method, an MLD method, an MVD method or a PECVD method.

According to a development, the dielectric remains

Isolator layer structure after its formation for a predetermined period of time before the dielectric Barrier layer is formed on it. This causes a particularly large number of decomposition substances to be formed from the material prior to the formation of the dielectric barrier layer

Can outgas isolator layer structure. This contributes to the fact that a probability that decomposition substances can penetrate into the organic functional layer structure after the formation of the dielectric barrier layer is particularly low. The predetermined period of time can

for example, about 2 hours.

According to a development, the substrate and / or the insulator layer structure are heated before and / or during the application of the dielectric barrier layer. As a result, when applying the dielectric barrier layer, the substrate or the insulator layer structure can be opposite to one another

Room temperature have significantly elevated temperature. This can help to keep a density of the dielectric

Barrier layer compared to one at lower

Temperatures, for example, at room temperature or less, generated dielectric barrier layer is increased, whereby the barrier effect against the decomposition substances is particularly good. In particular, the temperature for the production of the thin dielectric barrier layer, for example, from A1 ₂ 0 ₃ and / or produced in an ALD method, for example, with a thickness of 4 nm to 6 nm, to achieve a particularly dense barrier layer

be optimized. Moreover, increasing the temperature of the material of the insulator layer structure causes increased outgassing of the decomposition materials of the material of the insulator layer structure prior to the application of the

dielectric barrier layer. This causes the

Time of application of the dielectric barrier layer only a few decomposition substances in the material of the

Insulator layer structure are present, whereby a

Probability that the decomposition substances the

penetrate dielectric barrier layer, due to their low number is particularly low. Furthermore, a quality of the first electrode, in particular if it has a TCO layer or is formed thereof, can be improved by means of the elevated temperature. Further improvement can be achieved by adding oxygen just prior to the application of the dielectric barrier layer.

Embodiments of the invention are illustrated in the figures and are explained in more detail below.

Show it:

Figure 1 is a sectional view of an embodiment of an organic optoelectronic device;

Figure 2 is a sectional view of an embodiment of an organic optoelectronic device;

Figure 3 is a sectional view of an embodiment of an organic optoelectronic device;

Figure 4 is a sectional view of an embodiment of an organic optoelectronic device;

Figure 5 is a sectional view of an embodiment of an organic optoelectronic device;

Figure 6 is a sectional view of an embodiment of an organic optoelectronic device;

FIG. 7 shows a detailed representation of an exemplary embodiment of an organic optoelectronic component;

FIG. 8 shows a detailed representation of an exemplary embodiment of an organic optoelectronic component;

FIG. 9 shows an example of a voltage-luminous intensity diagram; Figure 10 is an example of a voltage-current density diagram;

Fig. 11 is an example of a voltage-luminous efficiency diagram;

FIG. 12 is a flowchart of an embodiment of a

Process for producing an organic

optoelectronic component. In the following detailed description, reference is made to the accompanying drawings, which form a part of this specification, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. Because components of

Embodiments in a number of different

Orientations can be positioned, the serves

Directional terminology for illustration and is in no way limiting. It is understood that other embodiments may be utilized and structural or logical changes may be made without departing from

To deviate scope of the present invention. It should be understood that the features of the various embodiments described herein may be combined with each other unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.

An organic optoelectronic component may emit an organic electromagnetic radiation

Component or an organic electromagnetic radiation absorbing component. An organic one

Electromagnetic radiation absorbing device may for example be a solar cell. An organic one

electromagnetic radiation emitting device can be an organic electromagnetic radiation emitting semiconductor device and / or as a organic electromagnetic radiation emitting diode or as an organic electromagnetic radiation emitting

Transistor be formed. The radiation can

For example, be light in the visible range, UV light and / or infrared light. In this context, the

emitting organic electromagnetic radiation

Component, for example, as an organic light emitting diode (Organic Light Emitting Diode, OLED) or as

be formed organic light emitting transistor.

Fig. 1 shows an embodiment of an organic optoelectronic device 1. The organic

Optoelectronic component 1 has a carrier 12. The carrier 12 may be translucent or transparent. The carrier 12 serves as a carrier element for electronic

Elements or layers, for example light-emitting elements. The carrier 12 may be, for example, plastic,

Metal, glass, quartz and / or have a semiconductor material or be formed therefrom. Furthermore, the carrier 12 may comprise or be formed from a plastic film or a laminate with one or more plastic films. The carrier 12 may be mechanically rigid or mechanically flexible.

On the carrier 12 is an opto-electronic

Layer structure formed. The optoelectronic

Layer structure has a first electrode layer 14, which has a first electrode 20. A first

Contact section 16 and a second contact section 18 are formed laterally outside on the first electrode layer 14. Between the carrier 12 and the first

Electrode layer 14 may be formed a first barrier thin film.

The first electrode 20 is electrically conductive from the first contact portion 16 by means of a first isolation barrier 21 isolated. The second contact section 18 is connected to the first electrode 20 of the optoelectronic layer structure

electrically coupled. The first electrode 20 may be formed as an anode or as a cathode. The first electrode 20 may be translucent or transparent. The first electrode 20 comprises an electrically conductive material, for example metal and / or a conductive conductive oxide (TCO) or a

Layer stacks of multiple layers comprising metals or TCOs. The first electrode layer 14 and in particular the first electrode 20 may, for example, a

Layer stack of a combination of a layer of a metal on a layer of a TCOs, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode layer 14 and in particular the first electrode 20 may comprise, as an alternative or in addition to the mentioned materials: networks of metallic nanowires and particles, for example of Ag, networks of carbon nanotubes, graphene particles and layers and / or networks of semiconducting nanowires.

Over the first electrode 20, an organic functional layer structure 22 of the optoelectronic layer structure is formed. The organic functional layer structure 20 is formed adjacent to the first isolation barrier 21 and a second isolation barrier 23. In addition, the organic functional layer structure 22 may be at least partially over the first and / or second

Isolation barrier 21, 23 may be formed. The organic functional layer structure 22 may, for example, have one, two or more partial layers. For example, the organic functional layer structure 22 may be a

Hole injection layer, a hole transport layer, a

Emitter layer, an electron transport layer and / or an electron injection layer. The

Hole injection layer serves to reduce the band gap between the first electrode and hole transport layer. In the hole transport layer, the hole conductivity is larger than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is larger than that

Hole conductivity. The electron transport layer serves to transport the electrons. The

Electron injection layer serves to reduce the

Band gap between second electrode and

Electron transport layer. Further, the organic functional layer structure 22 may be one, two or more

functional layer structure units, each having the said sub-layers and / or further intermediate layers.

Over the organic functional layer structure 22 is a second electrode 23 of the optoelectronic

Layer structure is formed, which is electrically coupled to the first contact portion 16. The second

Contact section 18 is of the organic functional

Layer structure 22 and from the second electrode 23 by means of the second insulating barrier 23 electrically insulated. The second electrode 23 may be formed according to any of the configurations of the first electrode 20, the first one

Electrode 20 and the second electrode 23 is equal to or

can be designed differently. The first electrode 20 serves, for example, as the anode or cathode of

optoelectronic layer structure. The second electrode 23 serves as a cathode or anode of the optoelectronic layer structure corresponding to the first electrode. Of the

Carrier 12 with the first electrode layer 14, that is to say with the first electrode 20, the first contact section 16, the second contact section 18 and with the isolation barriers 21, 23 may be referred to as the substrate.

The optoelectronic layer structure is an electrically and / or optically active region. The active region is, for example, the region of the organic optoelectronic Components 1, in which electric current for operation of the organic optoelectronic component 1 flows and / or in which electromagnetic radiation is generated or absorbed. On or above the active area, a getter structure (not shown) may be arranged. The getter layer can be translucent, transparent or opaque. The getter layer may include or be formed of a material that absorbs and binds substances that are detrimental to the active area.

Above the second electrode 23 and partially over the first contact portion 16 and partially over the second one

Contact section 18, an encapsulation layer 24 of the optoelectronic layer structure is formed, which encapsulates the optoelectronic layer structure. The

Encapsulation layer 24 may be formed as a second barrier thin film. The encapsulation layer 24 may also be referred to as thin-layer encapsulation. The

Encapsulation layer 24 forms a barrier to chemical contaminants or atmospheric agents, especially to water (moisture) and oxygen. The encapsulation layer 24 may be formed as a single layer, a layer stack, or a layered structure. The encapsulation layer 24 may include or be formed from: alumina, zinc oxide, zirconia,

Titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide,

Silicon oxide, silicon nitride, silicon oxynitride,

Indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof. If necessary, the first

Barrier layer on the carrier 12 corresponding to a configuration of the encapsulation layer 24 may be formed.

In the encapsulation layer 24 are above the first

Contact section 16 a first recess of the

Encapsulation layer 24 and over the second contact portion 18, a second recess of the encapsulation layer 24th

educated. In the first recess of the Encapsulation layer 24, a first contact region 32 is exposed and in the second recess of

Encapsulation layer 24, a second contact region 34 is exposed. The first contact region 32 serves for

electrical contacting of the first contact portion 16 and the second contact portion 34 is for electrical

Contacting the second contact portion 18.

Over the encapsulation layer 24, an adhesive layer 36 is formed. The adhesive layer 36 comprises, for example, an adhesive, for example an adhesive,

For example, a laminating adhesive, a paint and / or a resin. The adhesive layer 36 may comprise, for example, particles which scatter electromagnetic radiation, for example light-scattering particles.

Above the adhesive layer 36 is a cover body 38

educated. The adhesive layer 36 serves to secure the cover body 38 to the encapsulation layer 24. The cover body 38 has, for example, plastic, glass

and / or metal. For example, the cover body 38 may be formed substantially of glass and a thin

Metal layer _/ for example, a metal foil, and / or a graphite layer, such as a graphite laminate, have on the glass body. The cover body 38 serves to protect the organic optoelectronic component 1,

for example, against mechanical forces from the outside. Furthermore, the cover body 38 for distributing and / or

Dissipating heat that is in the organic

optoelectronic component 1 is generated. For example, the glass of the covering body 38 can serve as protection against external influences, and the metal layer of the covering body 38 can serve for distributing and / or dissipating the heat arising during operation of the organic optoelectronic component 1.

The isolation barriers 21, 23 are part of a

Insulator layer structure. Above the substrate and directly on the Insulator layer structure and in particular the

Isolation barriers 21, 23 each have a dielectric barrier layer 40 is formed such that in Figure 1 above vertical surfaces and lateral side surfaces of the insulator layer structure and in particular the

Isolation barriers 21, 23 of the dielectric

Barrier layer 40 are completely covered. In other

In other words, the isolation barriers 21, 23 are completely enclosed by the substrate and the dielectric barrier layer 40. Thus, the organic is functional

Layer structure 20 next to and / or, if the organic functional layer structure 20 over at least partially on The term "vertical surface" are referred to in this description surfaces of structures that are in the figures in the vertical direction at the top, but extend in the horizontal direction Thus, the term "vertical" in this context does not refer to the direction of extension of the corresponding surface but to its position in the figures.

The material containing the insulator layer structure and

in particular the isolation barriers 21, 23 or of which the insulator layer structure and the

Isolation barriers 21, 23 are formed can

for example, be an organic material, in particular an organic resist, in particular synthetic resin.

The material of the dielectric barrier layer 40 is formed electrically insulating. The dielectric

Barrier layer 40 is formed so thin that its electrical function, in particular its electrical

insulating function is not or at least approximately not given. In particular, the dielectric

Barrier layer 40 formed so thin that at least theoretically charge carriers can tunnel through them unhindered or at least almost unhindered. In particular, the dielectric barrier layer 40 has a thickness of 0.1 nm to 20 nm, for example from 1 nm to 10 nm,

for example, from 2 nm to 7 nm.

The dielectric barrier layer 40 serves to prevent the outgassing of decomposition substances from the

Insulator layer structure and in particular the

Isolation barriers 21, 23. The dielectric

The barrier layer 40 is thus so thin that the dielectric barrier layer 40 is electrically and / or optically inactive regardless of the material used for the dielectric barrier layer 40 and yet provides sufficient protection against decomposition of the underlying insulator layer structure into the organic functional layer

Layer structure 22 penetrated.

The dielectric barrier layer 40 can be deposited directly on the substrate and the insulator layer structure, in particular from the gas phase, for example in an ALD method. The dielectric barrier layer 40 may

alternatively an MLD layer, an MVD layer or a

PECVD layer, in principle, the dielectric barrier layer 40 is deposited from the gas phase.

Alternatively, the dielectric barrier layer 40 may be formed by sputtering.

The dielectric barrier layer 40 has, for example, Al ₂ O ₃ , ΤίO ₂ , ZrO x, ηηθ, HfQ x and / or alucons, titanocones or a self-aligning monolayer (Seif Assembling Mono layer - SAM) or is formed therefrom.

By way of example, the dielectric barrier layer 40 is an ALD layer of Al 2 O 3 with a thickness of 4 nm to 6 nm and has no appreciable influence on the electrooptical behavior of the organic optoelectronic component 1 during operation, especially instantaneous, but prevents this in the medium and long term Outgassing the

Decomposition substances of the material of the insulator layer structure. The dielectric barrier layer 40 thus has medium to long term, a positive effect on a uniform luminance and a uniform illumination and on the life of the organic optoelectronic device 1. Fig. 2 shows an embodiment of an organic optoelectronic device, for example, largely corresponds to the embodiment shown in Figure 1. The optoelectronic component 1 has the dielectric

Barrier layer 40 on that is in this

Embodiment not only on the isolation barriers 21, 23 but also over the entire first electrode 20 extends. However, the electrical function of the first electrode remains unchanged or at least approximately unchanged, since the dielectric barrier layer 40 is formed so thin that the charge carriers can tunnel through it.

In particular, the dielectric barrier layer 40 is formed from an electrically insulating material and formed so thin that charge carriers, for example holes or electrons, can pass from the underlying first electrode 20 to the organic functional layer structure 22 lying above the dielectric barrier layer 40, or the other way around, for example about

Tunneling effects, although the dielectric barrier layer 40 is formed as a flat closed layer.

FIG. 3 shows an exemplary embodiment of an organic optoelectronic component which largely corresponds, for example, to the exemplary embodiment shown in FIG. The optoelectronic component 1 has the dielectric

Barrier layer 40 on that is in this

Embodiment not only on the isolation barriers 21, 23 and the first electrode 20 but also on the first and second contact portion 16, 18 extends. The electrical function of the first electrode and the

However, contact portions 16, 18 remain unchanged or at least approximately unchanged, since the dielectric Barrier layer 40 is formed so thin that the charge carriers can tunnel through them.

In particular, the dielectric barrier layer 40 is formed of an electrically insulating material and formed so thin that charge carriers, such as holes or electrons, from the underlying contact portions 16, 18 to not shown in Figure 3 via the dielectric barrier layer 40 electrical contacts for electrical contacting of the organic optoelectronic component 1 or the other way around,

for example via tunneling effects, although the dielectric barrier layer 40 is a sheet-like closed layer

is trained. In addition, the dielectric

Barrier layer 40 help to prevent the first contact region 32 and / or the second contact region 34 oxidize.

FIG. 4 shows an exemplary embodiment of an organic optoelectronic component which largely corresponds, for example, to the exemplary embodiment shown in FIG. The optoelectronic component 1 has the dielectric

Barrier layer 40 on that is in this

Embodiment not only on the isolation barriers 21, 23 but also on a power distribution structure 42 and

Insulator layers 44 extends.

The power distribution structure 42 has several

Current busbars, also referred to as busbars, on or are formed thereof. The power distribution structure 42 and in particular the busbars are each one of

Insulator layers 44 covered. In particular, they cover

Insulator layers 44 in Figure 4 above vertical

Surfaces, each in a lateral direction

extend, and lateral side surfaces, which in

vertical direction, the power distribution structure 42. The insulator layers 44 have an electrical

insulating material and are formed so thick that they prevent charge carriers from the

Current distribution structure 42 directly into the organic

functional layer structure 22 can occur and can only reach the organic functional layer structure 22 via the first electrode 20.

The current distribution structure 42 and the insulator layers 44 are part of the substrate of the organic optoelectronic component 1.

The insulator layers 44 are of the dielectric

Barrier layer 40 covered. In particular, the covered

Dielectric barrier layer 40 in Figure 4 above vertical surfaces, each extending in the lateral direction, and lateral side surfaces, which in

extend the vertical direction, the insulator layers 44. The dielectric barrier layer 40 prevents outgassing of decomposition substances from the material of

Insulator layer structure, in particular of the insulator layers 44.

Optionally, the dielectric barrier layer 40

be formed solely over the insulator layers 44 and not over the isolation barriers 21, 23rd

FIG. 5 shows an exemplary embodiment of an organic optoelectronic component which largely corresponds, for example, to the exemplary embodiment shown in FIG. The optoelectronic component 1 has the dielectric

Barrier layer 40 on that is in this

Embodiment not only on the isolation barriers 21, 23 and the power distribution structure 42 and the

Insulator layers 44 extends but also over the first electrode 20th

FIG. 6 shows an exemplary embodiment of an organic optoelectronic component which largely corresponds, for example, to the exemplary embodiment shown in FIG. The Optoelectronic component 1 has the dielectric

Barrier layer 40, which is in this

Embodiment not only on the isolation barriers 21, 23, via the power distribution structure 42 and the

Insulator layers 44 and via the first electrode 20th

but also via the contact portions of 16, 18. In other words, the dielectric extends

Barrier layer 40 over the entire substrate of the organic optoelectronic component. 1

Fig. 7 shows a detailed view of a

Embodiment of an organic optoelectronic component, for example one of the above explained with reference to Figures 4, 5 and 6 organic optoelectronic devices 1. In particular, Figure 7 shows a detailed view of the power distribution structure 42,

in particular, a busbar of the power distribution structure 42, and the corresponding insulator layer 44. The power distribution structure 42 has three

superimposed layers, in particular a first bus bar layer 46 formed directly on the first electrode 20, a second busbar layer 48 formed on the first bus bar layer 46, and a third busbar layer 50 formed on the second bus bar layer 48. The first bus bar layer 46 has

For example, molybdenum on or is formed thereof, the second busbar layer 48 comprises, for example, aluminum or is formed thereof and the third busbar layer 50 comprises, for example molybdenum or is formed thereof.

In cross-section, the first electrode 20 and the insulator layers 44 completely enclose the current distribution structure 42, in particular the busbars.

Fig. 8 shows a detailed view of a

Embodiment of an organic optoelectronic device, for example, with reference to Figure 7 illustrated organic optoelectronic device 1, wherein on the first electrode 20 and the insulator layer 44, the dielectric barrier layer 40 is formed and wherein on the dielectric barrier layer 40, the

organic functional layer structure 22 is formed.

In cross-section, the dielectric barrier layer 40 and the first electrode 20 completely enclose the insulator layer structure, in particular the insulator layer 44. The

Insulator layer 44 around the current distribution structure 42nd

prevents charge carriers directly from the

Current distribution structure 42 into the organic functional layer structure 22 pass. The charge carriers arrive exclusively via charge carrier paths 52 of the

Current distribution structure 42 in the organic functional layer structure 22. In this case, the charge carriers

tunnels unhindered or at least almost unhindered through the dielectric barrier layer 40, since these

is accordingly thin. Nevertheless, the dielectric barrier layer 40 prevents or reduces the outgassing of decomposition substances from the insulator layer structure, in particular the insulator layer 44, into the organic layer

functional layer structure 22. For example, the dielectric barrier layer Αΐθχ or TiOx has or is formed thereof and / or has a thickness in a range of, for example, 2 nm to 7 nm.

Pig. 9 shows an example of a voltage-luminance diagram. In the voltage-luminosity diagram several curves are drawn, which have a luminosity in

Depend on a voltage applied to the organic optoelectronic component 1 voltage. The various measurement curves relate to different power distribution structures 42, in particular

Power distribution structures 42 with different busbars, in particular different with respect to the material from which they are formed, and various trained on it

Dielectric barrier layers 40, in particular different with respect to the material used from which they are formed, wherein the dielectric barrier layers 40 all have a thickness in the range of 2 nm to 7 nm.

The measured curves are so close to each other that they can not be shown separated from each other on the scale shown. The voltage-light intensity diagram thus shows that the dielectric barrier layer 40 has no appreciable or at least only negligible influence on the luminous intensity of the organic

optoelectronic component 1 has. Fig. 10 shows an example of a voltage-current density diagram. In the voltage-current density diagram, several measurement curves are plotted, which is a current density of a current, which in operation via the organic optoelectronic

Component 1 flows, depending on a to the

organic optoelectronic device 1 applied voltage.

The various measurement curves relate to different power distribution structures 42, in particular

Power distribution structures 42 with different busbars, in particular different with respect to the material from which they are formed, and various formed thereon

Dielectric barrier layers 40, in particular different with respect to the material used, from which they are formed, wherein the dielectric barrier layers 40 all have a thickness of 2 nm or 3 nm.

The measured curves lie in the relevant operating range from 6 V at least partially so close to each other that they can not be shown separated from each other in the relevant operating range on the scale shown. From the

Voltage-current density diagram thus shows that the dielectric barrier layer 40 no significant or has at least only negligible influence on the current density in the organic optoelectronic component 1.

Fig. 11 shows an example of a voltage-luminous efficiency diagram. In the voltage-luminous efficiency diagram, several measurement curves are plotted, which have a luminous efficiency of the organic optoelectronic component 1 in FIG

Depend on a voltage applied to the organic optoelectronic component 1 voltage.

The measured curves lie in the relevant operating range between 6 V and 12 V at least partially so close to each other that they can not be displayed separately from each other in the relevant operating range on the scale shown. From the voltage-light efficiency diagram is thus apparent that the dielectric barrier layer 40 no

significant or at least negligible influence on the luminous efficiency of the organic optoelectronic device 1 has.

Fig. 12 shows a flowchart of a method for

Producing an organic optoelectronic component, for example as explained above

Optoelectronic component 1.

In a step S2, a substrate with a first

Electrode formed. For example, the substrate is formed with the first electrode 20. Optionally, that can Substrate be formed so that it is the first

Electrode layer 14, in particular the first electrode 20, and the contact portions 16, 18 has. Furthermore, optionally in step S2 already a part of

Insulator layer structure 42 are formed, in particular, the isolation barriers 21, 23 are formed. The isolation barriers 21, 23 may be parts of the substrate. In an optional step S4, a

Power distribution structure are formed. For example, in step S4, the power distribution structure 42 may be formed on the first electrode 20. In a step S6, an insulator layer structure becomes

educated. For example, the above-described insulator layer structure 42 is formed. The

Insulator layer structure 42 includes isolation barriers 21, 23 and / or insulator layers 44. In particular, in the step S6, the insulator layers 44 may be applied to the

corresponding busbars of the insulator layer structure 42

be formed.

In a step S8, a dielectric barrier layer is formed. For example, the above-described dielectric barrier layer 40 is formed. The dielectric barrier layer 40 may be over the entire

Substrate are formed. Alternatively, the

dielectric barrier layer 40 only over the

Insulator layer structure, in particular the

Isolation barriers 21, 23 and / or the insulator layers 44, and / or the first electrode 20 are formed. The dielectric barrier layer 40 is deposited from the gas phase directly on the substrate, in particular in an ALD process. Alternatively, the dielectric

Barrier layer 40 in an MLD process, an MVD

Process or a PECVD process are deposited or formed by sputtering. Optionally, after forming the insulator layer structure, it may be left for a predetermined period of time before the dielectric barrier layer 40 is formed thereover. During this predetermined period of time, the

Disperse decomposition materials unhindered from the insulator layer structure, without posing a threat to the organic functional layer structure. This reduces the number of decomposition substances in the insulator layer structure before the formation of the dielectric barrier layer 40. The predetermined duration may, for example, be between 1 and 3 hours, for example about 2 hours. During this predetermined period of time, the substrate may be heated with the dielectric barrier layer 40, thereby promoting the outgassing of the decomposers prior to forming the dielectric barrier layer 40.

In a step S10, an organic, in particular an organic functional layer structure is formed.

For example, in step S10, the organic

functional layer structure 22 is formed over the substrate and over the dielectric barrier layer 40.

In a step S12, a second electrode is formed. In particular, the second electrode 23 is above the

organic functional layer structure 22 is formed.

In an optional step S14, a cover may be formed or disposed over the second electrode.

For example, the cover may comprise the encapsulation layer 24, the adhesive layer 36 and / or the cover body 38.

The invention is not limited to those specified

Embodiments limited. For example, in all embodiments, one of the isolation barriers 21, 23, for example the second isolation barrier 23, can be dispensed with. Furthermore, the Insulator layer structure further insulating structures, which are formed by the material that outgases decomposition substances over time, and the corresponding insulating structures can also from the

be covered dielectric barrier layer 40.

LIST OF REFERENCE NUMBERS

Organic optoelectronic component 1

Carrier 12

First electrode layer 14

First contact section 16

Second contact section 18

First electrode 20

First isolation barrier 21

Organic functional layer structure 22

Second isolation barrier 23

Encapsulation layer 24

First contact area 32

Second contact area 34

Adhesive layer 36

Cover body 38

Dielectric barrier layer 40

Power Distribution Structure 42

Insulator layer 44

First bus bar layer 46

Second bus bar layer 48

Third bus bar layer 50

Charge carrier paths 52

Steps S2 to S14

Claims

claims

1. Organic optoelectronic component (1), with

a substrate having at least a first electrode (20),

a dielectric insulator layer structure disposed on the substrate and in direct physical contact with the first electrode (20),

a dielectric barrier layer (40) formed directly on the insulator layer structure and at least partially directly on the first electrode (20) covering the lateral side surfaces of the insulator layer structure, an organic functional layer structure (22) overlying the first electrode (20) and is formed on and / or adjacent to the dielectric barrier layer (40), and

a second electrode (23) formed over the organic functional layer structure (22).

2. Organic optoelectronic component (1) according to

Claim 1, wherein

the substrate has a first contact section (16)

which is electrically coupled to the second electrode (23) and which serves to electrically contact the second electrode (23), and

the dielectric insulator layer structure is a first one

Insulation barrier (21), the first electrode (20) from the first contact portion (16) electrically

isolated, and

the dielectric barrier layer (40) is formed directly on the first isolation barrier (21) and covers lateral side surfaces of the first isolation barrier (21).

3. Organic optoelectronic component (1) according to one of the preceding claims, in which

the substrate has a current distribution structure (42)

having directly on the first electrode (20)

is trained, the dielectric insulator layer structure

Insulator layers (44), which directly on the

Current distribution structure (42) are formed and cover the lateral side surfaces of the power distribution structure (42) and

the dielectric barrier layer (40) is formed directly on the insulator layers (44) and lateral

Side surfaces of the insulator layers (44) covered.

4. The organic optoelectronic component (1) according to claim 1, wherein the substrate has a second contact section (18), which is electrically coupled to the first electrode (20) and to the

electrically contacting the first electrode (20) is used.

5. Organic optoelectronic component (1) according to one of the preceding claims, wherein the dielectric

Barrier layer (40) over the entire first electrode (20) is formed.

6. Organic optoelectronic component (1) according to

Claim 5, wherein the dielectric barrier layer (40) is formed over the entire substrate.

7. An organic optoelectronic component (1) according to any one of the preceding claims, wherein the dielectric

Barrier layer (40) has a thickness of 0.1 nm to 20 nm, for example from 1 nm to 10 nm, for example from 2 nm to 7 nm.

8. An organic optoelectronic component (1) according to any one of the preceding claims, wherein the dielectric

Barrier layer (40) AI2O3, Ti02, ZrOx, ZnOx, HfO _x and / or Alucone, Titanocone or a self-aligning monolayer comprises or is formed from.

9. Method for producing an organic

optoelectronic component (1), in which a substrate having at least one first electrode (20) is formed,

a dielectric insulator layer structure on the

Substrate is formed in direct physical contact with the first electrode (20),

a dielectric barrier layer (40) is formed directly on the insulator layer structure and at least partially directly on the first electrode (20) so as to cover lateral side surfaces of the insulator layer structure, an organic functional layer structure (22) over the first electrode (20) and on and / or next to

dielectric barrier layer (40) is formed, and a second electrode (23) over the organic

functional layer structure (22) is formed.

10. The method of claim 9, wherein

the substrate is formed to have a first contact portion (16) electrically coupled to the second electrode (23) and for electrically contacting the second electrode (23),

the dielectric insulator layer structure is formed to have a first isolation barrier (21) electrically insulating the first electrode (20) from the first contact portion (16), and

the dielectric barrier layer (40) is formed directly on the first isolation barrier (21) so as to cover lateral side surfaces and a vertical surface of the first isolation barrier (21).

11. The method according to any one of claims 9 or 10, wherein the substrate is formed so that there is a

Current distribution structure (42) formed directly on the first electrode (20),

the dielectric insulator layer structure is formed to have insulator layers (44) formed directly on the current distributing structure (42) and covering the lateral side surfaces of the current distributing structure (42) and the dielectric barrier layer (40) is formed directly on the insulator layers (44) so as to cover lateral side surfaces and vertical surfaces of the insulator layers (44).

12. The method of claim 9, wherein the dielectric barrier layer is formed over the entire first electrode.

13. The method of claim 12, wherein the dielectric barrier layer (40) is formed over the entire substrate.

14. The method according to any one of claims 9 to 13, wherein the dielectric barrier layer (40) in an ALD method, an MLD method, an MVD method or a PECVD method is formed.

15. The method according to any one of claims 9 to 14, wherein the dielectric insulator layer structure remains free after its formation for a predetermined period of time before the

dielectric barrier layer (40) is formed on it.

16. The method according to any one of claims 9 to 15, wherein the substrate and / or the insulator layer structure are heated before and / or during the application of the dielectric barrier layer.