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WO2016123916A1 - 一种显示基板及其制备方法和一种显示设备 - Google Patents

一种显示基板及其制备方法和一种显示设备 Download PDF

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Publication number
WO2016123916A1
WO2016123916A1 PCT/CN2015/084428 CN2015084428W WO2016123916A1 WO 2016123916 A1 WO2016123916 A1 WO 2016123916A1 CN 2015084428 W CN2015084428 W CN 2015084428W WO 2016123916 A1 WO2016123916 A1 WO 2016123916A1
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Prior art keywords
layer
light
light emitting
transport layer
hole transport
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PCT/CN2015/084428
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English (en)
French (fr)
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闫光
吴长晏
孙力
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京东方科技集团股份有限公司
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Priority to EP15837080.9A priority Critical patent/EP3255673B1/en
Priority to US14/907,235 priority patent/US9620568B2/en
Publication of WO2016123916A1 publication Critical patent/WO2016123916A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a display substrate, a method for fabricating the same, and a display device.
  • OLED Organic Light-Emitting Diode
  • the display device of the light-emitting component is favored by people because of its advantages of lightness, low power consumption, wide viewing angle and fast response speed.
  • an OLED has a multilayer structure, and generally, each layer in the multilayer structure is an anode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode, respectively.
  • a feasible production process is to form an anode onto a substrate, and then set them in a coating processing manner (such as vacuum thermal evaporation, organic vapor deposition, etc.) according to the order of the hole transport layer, the light emitting layer, and the electron transport layer.
  • the cathode is finally placed on the uppermost layer to form a multi-layered OLED.
  • each OLED is divided into a plurality of light emitting units, and each of the light emitting units is provided with a light emitting layer of a primary color.
  • the prior art has at least the following problems.
  • the formed coating film width has a certain lower limit due to limitations of the plating process.
  • each of the light-emitting units is provided with a light-emitting layer of a primary color, and the width of each of the light-emitting units cannot be smaller than the lower limit of the coating width. Therefore, the width of each OLED on the substrate cannot be lower than the product of the lower limit of the coating width and the number of light-emitting units, which limits the improvement in display resolution.
  • embodiments of the present invention provide a display substrate, a method of fabricating the same, and a display device, thereby overcoming or alleviating one or more of the problems in the prior art.
  • a display substrate comprising a plurality of pixels, Each pixel is divided into a plurality of light emitting units, each of which includes an anode, a cathode, a carrier transport layer, and a light emitting layer, wherein:
  • At least one of the plurality of light emitting units includes one light emitting layer and at least one process auxiliary layer;
  • the process auxiliary layer and the light-emitting layer in the other light-emitting units are integrally formed by one-time coating using the same material.
  • the plurality of light emitting units are respectively a first light emitting unit, a second light emitting unit, a third lighting unit, and a fourth lighting unit;
  • the illuminating layer of the first illuminating unit includes a first illuminating layer
  • the second illuminating unit includes a first process auxiliary layer and a second illuminating layer
  • the third illuminating unit includes a third illuminating layer and a second process An auxiliary layer
  • the fourth light emitting unit includes a fourth light emitting layer
  • first luminescent layer and the first process auxiliary layer are formed by one coating using the same material, and the second luminescent layer and the third luminescent layer are coated by the same material.
  • the second process auxiliary layer and the fourth light-emitting layer are integrally formed by one coating using the same material.
  • a first barrier layer is included between the first process auxiliary layer and the second light-emitting layer, and a second barrier layer is included between the third light-emitting layer and the second process auxiliary layer, where The first barrier layer and the second barrier layer are formed integrally by one coating using the same material.
  • the carrier transport layer includes a hole transport layer
  • the hole transport layer in the first light emitting unit includes a first hole transport layer and a second hole transport layer
  • the second light emitting unit The hole transport layer in the middle hole transport layer, the fourth hole transport layer and the fifth hole transport layer, the hole transport layer in the third light emitting unit includes a sixth hole transport layer and a seventh a hole transport layer, the hole transport layer of the fourth light emitting unit includes an eighth hole transport layer;
  • first hole transporting layer, the third hole transporting layer, the sixth hole transporting layer and the eighth hole transporting layer are formed integrally by a single coating using the same material
  • the second hole transporting layer and the fourth hole transporting layer are formed integrally by a single coating using the same material
  • the fifth hole transporting layer and the seventh hole transporting layer are the same
  • the material is formed into a whole by one coating.
  • the cavity length of the microcavity corresponding to the first illuminating unit is a first preset cavity length
  • the cavity length of the microcavity corresponding to the two illuminating cells is a second preset cavity length
  • the third illuminating Single The cavity length of the microcavity corresponding to the element is a third preset cavity length
  • the cavity length of the microcavity corresponding to the fourth illumination unit is a fourth preset cavity length.
  • the anodes corresponding to each of the light emitting units have the same thickness.
  • the second illuminating layer and the third illuminating layer are composed of a luminescent material including a frequency of red light and green light in a corresponding frequency range;
  • the first luminescent layer and the first process auxiliary layer are composed of a luminescent material including a frequency of sky blue light in a corresponding frequency range;
  • the second process auxiliary layer and the fourth luminescent layer are composed of a luminescent material including a frequency of deep blue light in a corresponding frequency range.
  • the materials of the second luminescent layer and the third luminescent layer comprise a first luminescent material and a second luminescent material, wherein the first luminescent material is a luminescent material comprising a frequency of red light in a corresponding frequency range
  • the second luminescent material is a luminescent material having a frequency including green light in a corresponding frequency range;
  • the first luminescent layer and the first process auxiliary layer are composed of a luminescent material including a frequency of sky blue light in a corresponding frequency range;
  • the second process auxiliary layer and the fourth luminescent layer are composed of a luminescent material including a frequency of deep blue light in a corresponding frequency range.
  • the second illuminating layer and the third illuminating layer are composed of a luminescent material including a frequency of red light and green light in a corresponding frequency range;
  • the first luminescent layer and the first process auxiliary layer are composed of a luminescent material including a frequency of sky blue light in a corresponding frequency range;
  • the second process auxiliary layer and the fourth light emitting layer are composed of a light emitting material including a frequency of green light in a corresponding frequency range.
  • the materials of the second luminescent layer and the third luminescent layer comprise a first luminescent material and a second luminescent material, wherein the first luminescent material is a luminescent material comprising a frequency of red light in a corresponding frequency range
  • the second luminescent material is a luminescent material having a frequency including green light in a corresponding frequency range;
  • the first luminescent layer and the first process auxiliary layer are composed of a luminescent material including a frequency of sky blue light in a corresponding frequency range;
  • the second process auxiliary layer and the fourth light emitting layer are composed of a light emitting material including a frequency of green light in a corresponding frequency range.
  • the first barrier layer prevents carriers and excitons from being transferred to the first process An auxiliary layer
  • the second barrier layer prevents carriers and excitons from being transferred to the second process auxiliary layer
  • a display device comprising the display substrate described above.
  • a method for fabricating a display substrate includes a plurality of pixels, each of which is divided into a plurality of light emitting units, and the method includes:
  • the at least one light emitting unit includes a light emitting layer and a process auxiliary layer, and the light emitting layer in the process auxiliary layer and the other light emitting units is formed by one coating using the same material;
  • a second electrode is formed on an upper layer of the light emitting layer of each of the light emitting units.
  • the upper layer of the light emitting layer of the at least one of the partial light emitting units and the upper layer of the carrier transport layer of the light emitting unit other than the partial light emitting unit are formed by a coating processing method
  • the luminescent layer includes:
  • the light-emitting layer is formed by a coating process in an upper layer of the barrier layer of the at least one light-emitting unit and an upper layer of the carrier transport layer of the light-emitting unit other than the partial light-emitting unit.
  • the plurality of light emitting units are respectively a first light emitting unit, a second light emitting unit, a third lighting unit, and a fourth lighting unit;
  • an illuminating layer on the upper layer of the carrier transport layer of the partial illuminating unit of the plurality of illuminating units including:
  • the upper layer of the light emitting layer of the at least one of the partial light emitting units forms a barrier layer for blocking the first carriers and the excitons, including:
  • first barrier layer for blocking first carriers and excitons in an upper layer of the second light-emitting layer, and forming a first layer for blocking first carriers and excitons in an upper layer of the third light-emitting layer a second barrier layer; wherein the first barrier layer and the second barrier layer are formed integrally by a single coating using the same material.
  • the upper layer of the barrier layer of the at least one light emitting unit and the upper layer of the carrier transport layer of the light emitting unit other than the partial light emitting unit form a light emitting layer, including:
  • first process auxiliary layer Forming a first process auxiliary layer on an upper layer of the first barrier layer, forming a first light-emitting layer on an upper layer of the carrier transport layer of the first light-emitting unit, and forming a second process on an upper layer of the second barrier layer
  • An auxiliary layer, a fourth light emitting layer is formed on an upper layer of the carrier transport layer of the fourth light emitting unit; wherein the first light emitting layer and the first process auxiliary layer are formed by one coating using the same material
  • the second process auxiliary layer and the fourth luminescent layer are integrally formed by one coating using the same material.
  • the carrier transport layer is a hole transport layer
  • the first electrode is an anode
  • the second electrode is a cathode
  • the first carrier is a hole
  • first hole transport layer in an upper layer of the first electrode in the first light emitting unit, forming a third hole transport layer in an upper layer of the first electrode in the second light emitting unit, in the third light emitting
  • An upper layer of the first electrode in the unit forms a sixth hole transport layer
  • an upper layer of the first electrode in the fourth light emitting unit forms an eighth hole transport layer; wherein the first hole transport layer, the The third hole transporting layer, the sixth hole transporting layer and the eighth hole transporting layer are integrally formed by one coating using the same material;
  • the first electrode is an anode
  • the second electrode is a cathode
  • the carrier transport layer is a hole transport layer
  • An electron transport layer and a second electrode are sequentially formed on the upper layer of the light emitting layer of each of the light emitting units.
  • a method of fabricating a light emitting component comprising:
  • the at least one light emitting unit includes a light emitting layer and a process auxiliary layer, and the light emitting layer in the process auxiliary layer and the other light emitting units is formed by one coating using the same material;
  • a second electrode is formed on an upper layer of the light emitting layer of each of the light emitting units.
  • the light emitting component is an OLED.
  • a plurality of light emitting layers may be disposed in one light emitting unit, wherein the light emitting layer may be formed by one plating film with the light emitting layer of the adjacent light emitting unit. That is, the sum of the widths of the light-emitting layers of two or more adjacent light-emitting units is the coating width.
  • the width of each of the light-emitting members on the substrate can be lower than the product of the lower limit of the plating width and the number of light-emitting units, so that the display resolution can be improved.
  • FIG. 1 is a partial structural diagram of a display substrate according to an embodiment of the present invention.
  • FIG. 2 is a partial structural diagram of a display substrate according to an embodiment of the present invention.
  • FIG. 3 is a partial structural diagram of a display substrate according to an embodiment of the present invention.
  • FIG. 4 is a flowchart of a method for preparing a display substrate according to an embodiment of the present invention.
  • FIG. 5 is a flowchart of a method for preparing a display substrate according to an embodiment of the present invention.
  • Carrier transport layer 4 luminescent layer 401, first luminescent layer
  • Barrier layer 1001 first barrier layer 1002, second barrier layer
  • Embodiments of the present invention provide a display substrate including a plurality of pixels, each of which is divided into a plurality of light emitting units 1.
  • each of the light-emitting units 1 includes an anode 2, a carrier transport layer 3, a light-emitting layer 4, and a cathode 5 disposed on a substrate 9, wherein: at least one of the plurality of light-emitting units 1
  • the light emitting unit 1 includes a light emitting layer 4 and at least one process auxiliary layer 6; the above process auxiliary layer 6 and the other light emitting unit 1
  • the light layer 4 is an integral body formed by one coating using the same material.
  • a plurality of light emitting layers may be disposed in the light emitting unit, wherein the light emitting layer may be formed by one plating film with the light emitting layer of the adjacent light emitting unit. That is to say, the sum of the widths of the light-emitting layers of two or more adjacent light-emitting units is the coating width, so that the width of each of the light-emitting members on the substrate can be lower than the product of the lower limit of the coating width and the number of light-emitting units, thereby improving display resolution.
  • the display substrate includes a plurality of pixels, each of which is divided into a plurality of light emitting units 1.
  • Each of the light emitting units 1 includes an anode 2, a carrier transport layer 3, a light emitting layer 4, and a cathode 5 which are disposed on a substrate 9.
  • at least one of the plurality of light-emitting units 1 includes one light-emitting layer 4 and at least one process auxiliary layer 6; the process-assisted layer 6 and the light-emitting layer 4 of the other light-emitting units 1 are made of the same material. A whole formed by one coating.
  • one pixel may be composed of one light emitting part, which may be an OLED.
  • the material of the anode 2 may be composed of a metal, a metal compound or a conductive polymer or the like, such as indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum (A1).
  • the carrier transport layer 3 may include a hole transport layer 7 and an electron transport layer 7, wherein the hole transport layer 7 may be composed of an organic material for transporting holes and blocking electrons, and the electron transport layer 7 may be used for transport An organic material that blocks electrons and blocks holes.
  • the luminescent layer 4 may be composed of a fluorescent matrix material that emits light of a certain frequency range in a state triggered by excitons.
  • the cathode 5 may be composed of some active metals, such as silver, magnesium, etc., and the anode or cathode may be provided as a transparent electrode or a semi-transparent electrode according to actual needs.
  • the other light-emitting units 1 may be light-emitting units 1 other than the light-emitting unit 1 in which at least one light-emitting layer 4 is present, for example, other light-emitting units 1 may be adjacent light-emitting units 1.
  • Process assist layer 6 can be a light-emitting layer that is not used for illumination.
  • two light-emitting units 1 respectively include one light-emitting layer 4 and at least one process auxiliary layer 6, wherein the light-emitting layer 4 and the process auxiliary layer 6 may be longitudinally (ie, the direction of the vertical substrate 9), the process auxiliary layer 6 may not emit light, and the light-emitting layer 4 emits light.
  • the light-emitting layer 4 and the process auxiliary layer 6 of two or more adjacent light-emitting units 1 may be formed as a single film. Therefore, the sum of their widths may be the coating width, such that the width of each of the light-emitting members on the substrate 9 may be lower than the product of the lower limit of the coating width and the number of light-emitting units.
  • a barrier layer 10 may be disposed between the light-emitting layers including two different primary colors in the same light-emitting unit, as shown in FIG. 2 .
  • the light-emitting layer 4 and the process auxiliary layer 6 include a barrier layer 10 for blocking first carriers and excitons; wherein the first carriers are holes or electrons.
  • the barrier layer 10 may be composed of an organic material that blocks the first carrier and the excitons and transmits the second carrier, wherein the first carrier is different from the second carrier, that is, if the first carrier In the case of a hole, the second carrier is an electron, and if the first carrier is an electron, the second carrier is a hole.
  • the process auxiliary layer 6 in order to prevent holes generated by the anode 2 from being transported into the process auxiliary layer 6 away from the anode 2, the process auxiliary layer 6 emits light and is prevented from being generated in the light-emitting layer 4 close to the anode 2.
  • the excitons are transported into the light-emitting layer 4 away from the anode 2 such that the light-emitting layer 4 near the anode 2 emits light, and a barrier layer 10 may be disposed between the light-emitting layer 4 and the process auxiliary layer 6.
  • the plurality of light emitting units 1 may be four light emitting units, and the light emitting layer 4 in each of the light emitting units 1 may be arranged in the following manner. As shown in FIG. 3, the plurality of light emitting units 1 are the first light emitting unit 101, the second light emitting unit 102, the third light emitting unit 103, and the fourth light emitting unit 104, respectively.
  • the illuminating layer 4 of the first illuminating unit 101 includes a first illuminating layer 401
  • the second illuminating unit 102 includes a second illuminating layer 402 and a first process auxiliary layer 601
  • the third illuminating unit 103 includes a third illuminating layer 403 and a a second process layer 602
  • the fourth light-emitting layer 104 includes a fourth light-emitting layer 404; wherein, the first light-emitting layer 401 and the first process-assisted layer 601 are formed by one coating using the same material, and the second light-emitting layer
  • the 402 and the third light-emitting layer 403 are integrally formed by one plating using the same material, and the second process auxiliary layer 602 and the fourth light-emitting layer 404 are integrally formed by one plating using the same material.
  • four light emitting units 1 may be included in the OLED light emitting component, and the OLED light emitting component may be referred to as a four-pixel type OLED light emitting component.
  • the width of the anode 2 in each of the light-emitting units 1 may be less than or equal to 1/2 of the width of the plating film.
  • the first light-emitting layer 401 and the first process auxiliary layer 601 are one body formed by one-time coating using the same material, and the sum of the widths of the two may be equal to the film width.
  • the second luminescent layer 402 and the third luminescent layer 403 are formed by one coating using the same material, and the sum of the widths of the two can be Equal to the coating width.
  • the second process auxiliary layer 602 and the fourth light-emitting layer 404 are a single body formed by one coating using the same material, and the sum of the widths of the two may be equal to the coating width.
  • the specific distribution manner of the carrier transport layer 3 can be arbitrarily set as required based on the above structure.
  • the width of the carrier transport layer 3 and the cathode 5 may be twice the width of the plating film.
  • the anode 2 and the cathode 5 in the second light emitting unit 102 are energized, holes are transported by the anode 2 through the hole transport layer 7 to the second light emitting layer 402, and electrons are transferred from the cathode 5 through the electron transport layer 8 to the second light emitting layer.
  • the second luminescent layer 402 holes and electrons combine to form excitons, and excite the second luminescent layer 402 to emit light.
  • the first barrier layer 1001 holes and excitons cannot be transmitted to the first process.
  • Layer 601 therefore the first process auxiliary layer 601 is unable to emit light.
  • the third light emitting layer 403 in the third light emitting unit 103 can emit light, and the second process auxiliary layer 602 can not emit light.
  • the barrier layer 10 may not be disposed.
  • the same light-emitting unit 1 may include one light-emitting layer 4 and at least one process auxiliary layer 6 adjacent to each other.
  • a person can select a suitable material, and the electron transporting characteristics of the materials used in the two layers and/or the energy level relationship between the two can make the holes of the anode 2 or the electrons of the cathode 5 unable or difficult to reach the process auxiliary layer. 6. In this way, only the illuminating layer 4 is illuminated in one illuminating unit 1. For example, taking the OLED structure of FIG.
  • the second illuminating layer 402 and the third illuminating layer 403 can be selected to be transmitted at a faster rate.
  • the luminescent material having a very slow rate of electrons correspondingly, the first luminescent layer 401 and the first process auxiliary layer 601, and the second process auxiliary layer 602 and the fourth luminescent layer 404 may be transported at a faster rate, and the transmission is empty.
  • the crater is composed of a very slow luminescent material.
  • the second illuminating layer 402 in the second illuminating unit 102 can be guaranteed to emit light to a certain extent, and the first process auxiliary layer 601 can not emit light, and the third illuminating layer 403 in the third illuminating unit 103 can emit light, and the second process The auxiliary layer 602 may not emit light.
  • a blocking layer may be disposed between the illuminating layers, and specifically includes the following: the second illuminating layer 402 and the first process auxiliary
  • the first barrier layer 1001 is included between the layers 601
  • the second barrier layer 1002 is included between the third light-emitting layer 403 and the second process auxiliary layer 602; wherein the first barrier layer 1001 and the second barrier layer 1002 are made of the same material. A whole formed by one coating.
  • the first barrier layer 1001 and the second barrier layer 1002 are made of the same material.
  • the material is formed by a single coating, and the sum of the widths of the two can be equal to the width of the coating.
  • the arrangement of the illuminating layer in the illuminating component may be other arrangements, in addition to the above-mentioned arrangement, and an optional arranging mode is provided, which may specifically include the following:
  • the first light emitting layer may be included in the light emitting unit
  • the second light emitting unit may include a second light emitting layer
  • the third light emitting unit may include a third light emitting layer
  • the fourth light emitting unit may include a process auxiliary layer and a fourth light emitting layer
  • the process auxiliary layer A barrier layer may be disposed between the fourth luminescent layer and the fourth luminescent layer, wherein the third luminescent layer and the process auxiliary layer are formed integrally by one coating using the same material.
  • the structure of the carrier transport layer 3 in the OLED light emitting component may be various based on the specific arrangement manner of the light emitting layer 4, and an optional carrier transport layer 3 is provided below. If the carrier transport layer 3 includes the hole transport layer 7, and the first carrier is a hole, as shown in FIG. 3, the hole transport layer 7 of the first light emitting unit 101 includes the first hole transport layer 701.
  • the second hole transport layer 702 the hole transport layer 7 of the second light emitting unit 102 includes a third hole transport layer 703, a fourth hole transport layer 704, and a fifth hole transport layer 705, and the third light emitting unit 103
  • the hole transport layer 7 includes a sixth hole transport layer 706 and a seventh hole transport layer 707
  • the hole transport layer 7 of the fourth light emitting unit 104 includes an eighth hole transport layer 708; wherein, the first hole transport layer The layer 701, the third hole transporting layer 703, the sixth hole transporting layer 706, and the eighth hole transporting layer 708 are integrally formed by one coating using the same material, the second hole transporting layer 702 and the fourth empty layer.
  • the hole transport layer 704 is a whole formed by one coating using the same material, the fifth empty Transport layer 705 and a seventh hole transport layer 707 is the same material through a primary plated film formed integrally.
  • the hole transport layer 7 may be disposed in each of the light emitting units 1 in a plurality of ways. Specifically, some organic materials having the ability to transport holes may be selected as the hole transport layer 7 . As the material, the hole transport layer 7 can be formed by a coating process such as vacuum thermal evaporation. The first hole transporting layer 701, the third hole transporting layer 703, the sixth hole transporting layer 706, and the eighth hole transporting layer 708 are integrally formed by one coating using the same material, and the sum of the widths thereof may be It is equal to 2 times the width of the coating.
  • the second hole transporting layer 702 and the fourth hole transporting layer 704 are a single body formed by one-time plating using the same material, and the sum of their widths may be equal to the coating film width.
  • the fifth hole transporting layer 705 and the seventh hole transporting layer 707 are a single body formed by one-time plating using the same material, and the sum of the widths thereof may be equal to the coating film width.
  • the thickness of each hole transport layer 7, the thickness of the anode 2, and the like may be appropriately set on the basis of ensuring the primary color of each of the light-emitting units 1. At this time, the thickness of each of the anodes 2 may be the same or different, and On the basis of the primary color of each of the light-emitting units 1, an electron transport layer 8 may be provided between the light-emitting layer and the cathode.
  • the carrier transport layer 3 may include an electron transport layer 8, which may be arranged in the same manner as the hole transport layer 7 described above. The arrangement of the hole transport layer 7 described above will not be described herein.
  • FIG. 1 , FIG. 2 and FIG. 3 are only schematic diagrams of the logical structure of the light emitting device in the embodiment of the present invention.
  • the physical structure of the light emitting component there is no cavity between adjacent layers, for example, in FIG. 3 a cavity between the first light-emitting layer 401 and the second hole transport layer 702 in the first light-emitting unit 101, a sixth hole transport layer 706 and a seventh hole transport layer 707 in the third light-emitting unit 103
  • the cavity between the cavity and the eighth hole transport layer 708 and the fourth light-emitting layer 404 in the fourth light-emitting unit 104 is not present in the physical structure of the light-emitting component.
  • the OLED light-emitting component is only one pixel in the display substrate, and a plurality of pixels of the same OLED light-emitting component constituting the display substrate can be prepared, wherein the arrangement rules and rows of the respective pixels on the display substrate
  • the cloth mode can be set by the technician according to the actual situation.
  • the structure of the anode 2 corresponding to each of the light-emitting units 1 can be various.
  • the following provides an optional structure, which may be specifically as follows: the anode 2 corresponding to each of the light-emitting units 1
  • the thickness is the same.
  • Such a structure can simplify the etching process of the anode 2.
  • the OLED light-emitting component shown in FIG. 3 is a top-emitting OLED and the anode is made of ITO glass
  • an opaque reflective electrode may be disposed between the ITO glass substrate and the substrate for the light-emitting layer. The emitted light is reflected to the top layer of the OLED light-emitting component, ie, the location of the cathode, at which point the cathode can be a transparent or translucent electrode.
  • the material selection manner for each of the light-emitting layers 4 can be various, and several possible ways are given below.
  • the second luminescent layer 402 and the third luminescent layer 403 are composed of a luminescent material including a frequency of red light and green light in a corresponding frequency range; or, the second luminescent layer 402 and the third illuminating layer
  • the material of layer 403 comprises a first luminescent material and a second luminescent material
  • the first luminescent material is a luminescent material that includes a frequency of red light in a corresponding frequency range
  • the second luminescent material is a luminescent material that includes a frequency of green light in a corresponding frequency range.
  • the first luminescent layer 401 and the first process auxiliary layer 601 are composed of a luminescent material including a frequency of sky blue light in a corresponding frequency range; the second process auxiliary layer 602 and the fourth luminescent layer 404 include deep blue light in a corresponding frequency range.
  • a luminescent material of frequency is light having a wavelength in the range of 470 nm to 485 nm, and the deep blue light is light having a wavelength in the range of 450 nm to 465 nm.
  • the luminescent layer 4 in the OLED illuminating component may be formed by a luminescent material through a coating process, wherein the luminescent material may specifically be an organic material, for example, the polymer 8-hydroxyquinoline aluminum (Alq3) is a luminescent material.
  • the luminescent material can emit light of a certain frequency range when excited by an exciton.
  • a primary color may be selected as the primary color of a certain illuminating unit 1 in its corresponding frequency range, or two primary colors may be selected as two illuminating colors in their corresponding frequency ranges.
  • the second luminescent layer 402 and the third luminescent layer 403 are integrally formed by one coating using the same material, but since the illuminating frequency of the material includes the frequencies of red light and green light, it is in different light emitting units 1
  • the illuminating can be used for different primary colors, specifically red or green light, depending on the length of the cavity of the microcavity corresponding to the corresponding illuminating unit, wherein the microcavity can be a microcavity, and the cavity length can be the above microcavity The vertical distance between the two interfaces of the reflected light.
  • the luminescent material ie, the first luminescent material including the frequency of the red light in the corresponding frequency range may be mixed with the luminescent material (ie, the second luminescent material) including the frequency of the green light in the corresponding frequency range to be prepared as a whole.
  • the second luminescent layer 402 and the third luminescent layer 403 may be an integral formed by using the above-mentioned mixed material by one-time plating, in particular, whether the red light generated by the first luminescent material can be emitted from the transparent electrode or the second luminescent material.
  • the generated green light can be emitted from the transparent electrode depending on the length of the cavity of the corresponding microcavity of the corresponding light emitting unit.
  • the second luminescent layer 402 and the third luminescent layer 403 are composed of a luminescent material including a frequency of red light and green light in a corresponding frequency range; or, the second luminescent layer 402 and the third luminescent layer 403
  • the material comprises a first luminescent material and a second luminescent material, wherein the first luminescent material is a luminescent material comprising a frequency of red light in a corresponding frequency range, and the second luminescent material is a luminescent material comprising a frequency of green light in a corresponding frequency range .
  • the first luminescent layer 401 and the first process auxiliary layer 601 are illuminated by a frequency including a sky blue light in a corresponding frequency range
  • the material composition; the second process auxiliary layer 602 and the fourth light-emitting layer 404 are composed of a luminescent material including a frequency of green light in a corresponding frequency range.
  • the cavity length of the microcavity corresponding to the illuminating unit can be adjusted, so that the first illuminating unit 101 of the OLED illuminating component emits green light, so that the corresponding color of each illuminating component of the OLED illuminating component can be sky blue-green.
  • the above setting manner is also a common improvement display resolution. The way of the rate, therefore, can improve the resolution of the display device to some extent.
  • the cavity length of the microcavity corresponding to each illuminating component of the OLED illuminating component may be set.
  • the specific setting manner may be as follows: the first illuminating unit 101 corresponds to The cavity length of the microcavity is the first preset cavity length, the cavity length of the corresponding microcavity of the second illumination unit 102 is the second preset cavity length, and the cavity length of the corresponding microcavity of the third illumination unit 103 is the third pre-process.
  • the cavity length is set, and the cavity length of the microcavity corresponding to the fourth light emitting unit 104 is the fourth preset cavity length.
  • the cavity length of the corresponding micro-cavity of the corresponding light-emitting unit may be set by adjusting the thickness of the carrier transport layer and/or the anode in each of the light-emitting units, and the corresponding micro-cavity of each light-emitting unit The value of the cavity length determines the corresponding primary color of the corresponding light-emitting unit.
  • a plurality of light emitting layers may be disposed in the light emitting unit, wherein the light emitting layer may be formed by one plating film with the light emitting layer of the adjacent light emitting unit, that is, the light emitting layer of two or more adjacent light emitting units.
  • the sum of the widths is the coating width, so that the width of each of the light-emitting members on the substrate can be lower than the product of the lower limit of the coating width and the number of light-emitting units, so that the display resolution can be improved.
  • the embodiment of the present disclosure further provides a display device, which includes the display substrate provided by the above embodiments.
  • the display device can be a display panel, a display, a smart TV, a mobile phone, a tablet, or the like.
  • a plurality of light emitting layers may be disposed in the light emitting unit, wherein the light emitting layer may be formed by one plating with the light emitting layer of the adjacent light emitting unit, that is, the light emitting layer of two or more adjacent light emitting units.
  • the sum of the widths is the width of the coating, such that the width of each of the light-emitting components on the substrate can be less than the product of the lower limit of the coating width and the number of light-emitting units.
  • an embodiment of the present invention provides a method for preparing a display substrate. As shown in FIG. 4, the display substrate is divided into a plurality of light emitting units.
  • the processing flow of the method may include the following steps:
  • step 401 a first electrode of each of the light-emitting units is formed on the substrate, and a carrier transport layer is formed on the upper layer of the first electrode by a coating process.
  • Step 402 forming a light-emitting layer on the upper layer of the carrier transport layer of the partial light-emitting unit among the plurality of light-emitting units by a coating processing method.
  • Step 403 forming a light-emitting layer by an upper layer of the light-emitting layer of at least one of the partial light-emitting units and an upper layer of the carrier transport layer of the light-emitting unit other than the partial light-emitting unit by a coating processing method;
  • the at least one light-emitting unit comprises a light-emitting layer and a process auxiliary layer, and the light-emitting layer of the process auxiliary layer and the other light-emitting units are integrally formed by one-time coating using the same material.
  • Step 404 forming a second electrode on an upper layer of the light emitting layer of each of the light emitting units.
  • a plurality of light emitting layers may be disposed in the light emitting unit, wherein the light emitting layer may be formed by one plating film with the light emitting layer of the adjacent light emitting unit, that is, the light emitting layer of two or more adjacent light emitting units.
  • the sum of the widths is the coating width, so that the width of each of the light-emitting members on the substrate can be lower than the product of the lower limit of the coating width and the number of light-emitting units, so that the display resolution can be improved.
  • an embodiment of the present invention provides a method for fabricating a light-emitting component, which may be an OLED, and the light-emitting component may be divided into a plurality of light-emitting units.
  • step 401 a first electrode of each of the light-emitting units is formed on the substrate, and a carrier transport layer is formed on the upper layer of the first electrode by a coating process.
  • the first electrode may be an anode or a cathode, and the first electrode may be composed of ITO, IZO or Al, and the coating processing method may be vacuum thermal evaporation, organic vapor deposition, spin coating or inkjet printing.
  • the skilled person may select a conductive material having good electrical conductivity.
  • the conductive material may be ITO glass.
  • the technician can select the first electrode of a certain width and thickness according to actual needs, for example, taking the first electrode as an anode as an example, the technician can perform photolithography on the ITO glass to obtain an ITO glass base.
  • the sheet serves as the anode of the OLED light-emitting component.
  • the first electrode may be cleaned to remove surface contaminants such as carbon, etc., which facilitates injection of carriers from the first electrode into the organic material of the carrier transport layer, the light-emitting layer, and the like. Thereafter, the technician can place the resulting first electrode on the substrate.
  • the technician may provide a carrier transport layer on the upper layer of the first electrode.
  • the carrier transport layer is composed of an organic material, and the technician can form a carrier transport in the upper layer of the first electrode by a coating process.
  • Floor Generally, organic materials can be classified into two types, namely, small molecular organic materials and high molecular organic materials, and the corresponding coating processing methods can be selected by the category of the organic materials used in the OLED light-emitting components, for example, for small molecular organic materials, A film processing method such as vacuum thermal evaporation or organic vapor deposition may be used to form a corresponding organic material film. For the polymer organic material, a coating film processing method such as spin coating or inkjet printing may be used to form a corresponding organic material film.
  • Step 402 forming a light-emitting layer on the upper layer of the carrier transport layer of the partial light-emitting unit among the plurality of light-emitting units by a coating processing method.
  • the corresponding light-emitting layer may be formed by one-time plating, or may be formed by multiple plating.
  • Step 403 forming a light-emitting layer by an upper layer of the light-emitting layer of at least one of the partial light-emitting units and an upper layer of the carrier transport layer of the light-emitting unit other than the partial light-emitting unit by a coating processing method;
  • the at least one light-emitting unit comprises a light-emitting layer and a process auxiliary layer, and the light-emitting layer of the process auxiliary layer and the other light-emitting units are integrally formed by one-time coating using the same material.
  • the technician can preset the primary color of the light that needs to be emitted by each of the light-emitting units in the OLED light-emitting component.
  • a light-emitting unit that includes two light-emitting layers (one of which is a process auxiliary layer)
  • Only one luminescent layer needs to emit light.
  • the luminescent layer close to the first electrode may be disposed to emit light, and the luminescent layer away from the first electrode may not emit light.
  • a technician may select a suitable luminescent material and may pass through two luminescent layers.
  • the second illuminating layer and the third illuminating layer may be selected to have a faster rate of transporting holes and a slow rate of transmitting electrons.
  • the luminescent material is constructed, and correspondingly, the first luminescent layer and the first process auxiliary layer, and the second process auxiliary layer and the fourth luminescent layer may be composed of a luminescent material having a faster electron transport rate and a slower rate of transporting holes.
  • the above-mentioned light-emitting unit in which the light-emitting layer is disposed has at least one adjacent light-emitting unit which is a light-emitting unit other than the above-mentioned partial light-emitting unit, so that the same material can be used for one-time plating, carrier transport in the upper layer of the light-emitting layer and other light-emitting units.
  • the luminescent layer formed by the upper layer of the layer may be a single body.
  • processing of the foregoing step 403 may be various.
  • the following provides an optional processing manner, which may specifically include the following steps:
  • Step 1 forming a barrier layer for blocking the first carrier and the excitons in an upper layer of the light-emitting layer of at least one of the partial light-emitting units by a coating processing method; wherein the first carrier is empty Hole or electron.
  • a barrier layer may be disposed between the two light-emitting layers, and the barrier layer may be formed by one-time plating or separately by multiple plating.
  • the light-emitting layer is formed by the coating processing method on the upper layer of the barrier layer of the at least one light-emitting unit and the upper layer of the carrier transport layer of the light-emitting unit other than the partial light-emitting unit.
  • Step 404 forming a second electrode on an upper layer of the light emitting layer of each of the light emitting units.
  • the cathodes of all of the light-emitting units may also be a single body formed by one coating using the same material.
  • the specific processing mode is similar to the processing mode of the carrier transport layer. For details, refer to the related content of the processing mode of the carrier transport layer, and details are not described herein.
  • another carrier transport layer may be disposed between the light emitting layer and the second electrode.
  • An optional arrangement is provided below, that is, if the first electrode is an anode, the second electrode is a cathode, and carrier transport is performed.
  • the layer is a hole transport layer.
  • the processing of the above step 404 may include the following: an electron transport layer and a second electrode are sequentially formed on the upper layer of the light emitting layer of each of the light emitting units.
  • the OLED light-emitting component shown in FIG. 3 prepared by the above preparation method is a top-emitting OLED
  • the first electrode is an anode
  • the first electrode is made of ITO glass.
  • an opaque reflective electrode may be disposed between the ITO glass substrate and the substrate for reflecting the light emitted by the luminescent layer to the top layer of the OLED light-emitting component, that is, the position of the cathode.
  • the cathode may be transparent or half. Transparent electrode.
  • the plurality of light emitting units in the OLED light emitting component may be the first light emitting unit, the second light emitting unit, the third light emitting unit, and the fourth light emitting unit, respectively, and the structure of the corresponding OLED light emitting component is the structure shown in FIG.
  • the processing of the foregoing steps 401 to 404 may be specifically the processing procedure shown in FIG. 5, including the steps:
  • step 401 a first electrode of each of the light-emitting units is formed on the substrate, and a carrier transport layer is formed on the upper layer of the first electrode by a coating process.
  • the processing method for forming the carrier transport layer may be various. If the carrier transport layer is a hole transport layer, the first electrode is an anode, and the second electrode is a cathode, the carrier transport is formed.
  • the processing method of the layer may specifically include the following: forming a first hole transport layer in an upper layer of the first electrode in the first light emitting unit, and forming a third hole transport layer in an upper layer of the first electrode in the second light emitting unit Forming a sixth hole transport layer in an upper layer of the first electrode in the third light emitting unit, and forming an eighth hole transport layer in an upper layer of the first electrode in the fourth light emitting unit; wherein the first hole transport layer, The third hole transporting layer, the sixth hole transporting layer, and the eighth hole transporting layer are integrally formed by one plating using the same material; and the upper layer of the first hole transporting layer in the first light emitting unit is formed a second hole transport layer, a fourth hole transport layer is formed on an upper layer of the third hole transport layer in the second light
  • a hole transport layer may be formed in all of the light-emitting units by one coating process, and the hole transport layer formed is a single body. Then, a hole transport layer may be formed in the first light-emitting unit and the second light-emitting unit by one plating process, and the hole transport layer formed is a single body. Finally, a hole transport layer can be formed in the second light-emitting unit and the third light-emitting unit by one coating process, and the hole transport layer formed is a whole. All of the above hole transport layers may be made of the same material. The coating thickness of each of the above coating processes can be set in advance according to actual needs.
  • Step 402' in the carrier transport layer of the second light emitting unit by a coating process
  • the upper layer forms a second luminescent layer
  • the third luminescent layer is formed on the upper layer of the carrier transport layer of the third illuminating unit; wherein the second luminescent layer and the third luminescent layer are formed by one coating using the same material .
  • the second luminescent layer and the third luminescent layer may be composed of one luminescent material including frequencies of two different primary colors in a corresponding frequency range, or may be formed by mixing two different luminescent materials, for example,
  • the second luminescent layer and the third luminescent layer may be composed of one luminescent material including a frequency of red light and green light in a corresponding frequency range, or the materials of the second luminescent layer and the third luminescent layer include the first luminescent material and the first The second luminescent material, wherein the first luminescent material may be a luminescent material including a frequency of red light in a corresponding frequency range, and the second luminescent material may be a luminescent material including a frequency of green light in a corresponding frequency range.
  • the second illuminating layer and the third illuminating layer have the same material, but the illuminating units in which they are located can emit light of different primary colors.
  • the illuminating units in which they are located can emit light of different primary colors.
  • Step 403 ′ a first barrier layer for blocking the first carriers and excitons is formed on the upper layer of the second luminescent layer by a coating process, and the first carrier is formed on the upper layer of the third luminescent layer for blocking the first carrier And a second barrier layer of excitons; wherein the first barrier layer and the second barrier layer are formed integrally by one coating using the same material.
  • a barrier layer may be formed by a coating process using an organic material having a first carrier and an exciton blocking the second carrier, wherein the first carrier is different from the second carrier. That is, if the first carrier is a hole, the second carrier is an electron, and if the first carrier is an electron, the second carrier is a hole.
  • the sum of the widths of the first barrier layer and the second barrier layer may be equal to the coating width. Due to the presence of the barrier layer, the first carrier can be blocked from being transmitted from the first electrode to the third luminescent layer, and then transmitted to the other luminescent layer, thereby ensuring that only one luminescent layer of one illuminating unit can emit light.
  • Step 404 ′ forming a first process auxiliary layer in an upper layer of the first barrier layer by a coating process, forming a first light-emitting layer on an upper layer of the carrier transport layer of the first light-emitting unit, and forming an upper layer on the second barrier layer a second process auxiliary layer, a fourth light-emitting layer is formed on an upper layer of the carrier transport layer of the fourth light-emitting unit; wherein the first light-emitting layer and the first process auxiliary layer are formed by one coating using the same material,
  • the second process auxiliary layer and the fourth light-emitting layer are a single body formed by one coating using the same material.
  • Step 405 forming a second electrode on an upper layer of the light emitting layer of each of the light emitting units.
  • the OLED light-emitting component prepared by the process is on the substrate.
  • the width may be 1/2 of the product of the lower limit of the coating width and the number of light-emitting units, so that the display resolution can be improved.
  • the method for preparing the above-mentioned light-emitting component can be used not only for preparing a four-pixel type OLED light-emitting component, but also for preparing a three-pixel type OLED light-emitting component, and the specific structure of the three-pixel type OLED light-emitting component can be set according to actual conditions. The specific processing will not be described here.
  • a plurality of light emitting layers may be disposed in the light emitting unit, wherein the light emitting layer may be formed by one plating film with the light emitting layer of the adjacent light emitting unit, that is, the light emitting layer of two or more adjacent light emitting units.
  • the sum of the widths is the coating width, so that the width of each of the light-emitting members on the substrate can be lower than the product of the lower limit of the coating width and the number of light-emitting units, so that the display resolution can be improved.
  • a person skilled in the art may understand that all or part of the steps of implementing the above embodiments may be completed by hardware, or may be instructed by a program to execute related hardware, and the program may be stored in a computer readable storage medium.
  • the storage medium mentioned may be a read only memory, a magnetic disk or an optical disk or the like.

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Abstract

提供一种显示基板及其制备方法和一种显示设备，属于显示技术领域。显示基板包括多个像素，每个像素划分有多个发光单元（1），每个发光单元包括阳极（2）、阴极（5）、载流子传输层（3）和发光层（4），其中：多个发光单元（1）中的至少一个发光单元中包括一个发光层（4）和至少一个工艺辅助层（6）；工艺辅助层（6）与其它发光单元中的发光层是使用相同的材料经过一次镀膜形成的一个整体。采用本发明，可以提高显示分辨率。

Description

一种显示基板及其制备方法和一种显示设备 技术领域
本发明涉及显示技术领域，特别涉及一种显示基板及其制备方法和一种显示设备。
背景技术
随着显示技术的不断发展，显示设备中采用的发光部件种类越来越丰富，OLED(Organic Light-Emitting Diode，有机电致发光二极管)是一种在显示设备中非常常用的发光部件，基于OLED发光部件的显示设备以具有轻薄、低功耗、视角宽及响应速度快等优点，受到人们的青睐。
在OLED显示设备中，OLED具有多层结构，通常，该多层结构中各层分别为阳极、空穴传输层、发光层、电子传输层和阴极。一种可行的生产过程是将阳极形成到基板上，再通过镀膜加工方式(如真空热蒸镀、有机气相淀积等)按照空穴传输层、发光层和电子传输层的顺序，将它们设置在阳极的上层，最后将阴极设置在最上层，进而形成多层结构的OLED。通常，每个OLED划分有多个发光单元，每个发光单元内设置有一种基色的发光层。
发明内容
在实现本发明的过程中，发明人发现现有技术至少存在以下问题。在将空穴传输层、发光层和电子传输层等使用的有机材料镀膜到基板上时，由于镀膜工艺的局限性，所形成的镀膜宽度具有一定的下限。而且，在上述结构中，每个发光单元内设置有一种基色的发光层，每个发光单元的宽度则无法小于镀膜宽度的下限。因此，每个OLED在基板上的宽度无法低于镀膜宽度下限与发光单元数目的乘积，这对显示分辨率的提高造成了限制。
为此，本发明实施例提供了一种显示基板及其制备方法和一种显示设备，从而克服或减轻现有技术中的问题的一个或多个。
具体而言，本发明实施例采了下述技术方案。
在第一方面，提供了一种显示基板，所述显示基板包括多个像素， 每个像素划分有多个发光单元，每个发光单元包括阳极、阴极、载流子传输层和发光层，其中：
所述多个发光单元中的至少一个发光单元中包括一个发光层和至少一个工艺辅助层；
所述工艺辅助层与其它发光单元中的发光层是使用相同的材料经过一次镀膜形成的一个整体。
可选地，所述多个发光单元分别为第一发光单元、第二发光单元、第三发光单元和第四发光单元；
所述第一发光单元的发光层包括第一发光层，所述第二发光单元中包括第一工艺辅助层及第二发光层，所述第三发光单元中包括第三发光层及第二工艺辅助层，所述第四发光单元中包括第四发光层；
其中，所述第一发光层和所述第一工艺辅助层是使用相同的材料经过一次镀膜形成的一个整体，所述第二发光层和所述第三发光层是使用相同的材料经过一次镀膜形成的一个整体，所述第二工艺辅助层和所述第四发光层是使用相同的材料经过一次镀膜形成的一个整体。
可选地，所述第一工艺辅助层与所述第二发光层之间包括第一阻挡层，所述第三发光层与所述第二工艺辅助层之间包括第二阻挡层，其中，所述第一阻挡层与所述第二阻挡层是使用相同的材料经过一次镀膜形成的一个整体。
可选地，所述载流子传输层包括空穴传输层，所述第一发光单元中的空穴传输层包括第一空穴传输层及第二空穴传输层，所述第二发光单元中的空穴传输层包括第三空穴传输层、第四空穴传输层及第五空穴传输层，所述第三发光单元中的空穴传输层包括第六空穴传输层及第七空穴传输层，所述第四发光单元的空穴传输层包括第八空穴传输层；
其中，所述第一空穴传输层、所述第三空穴传输层、所述第六空穴传输层及所述第八空穴传输层是使用相同的材料经过一次镀膜形成的一个整体，所述第二空穴传输层及所述第四空穴传输层是使用相同的材料经过一次镀膜形成的一个整体，所述第五空穴传输层及所述第七空穴传输层是使用相同的材料经过一次镀膜形成的一个整体。
可选地，所述第一发光单元对应的微腔的腔长为第一预设腔长，所述二发光单元对应的微腔的腔长为第二预设腔长，所述第三发光单 元对应的微腔的腔长为第三预设腔长，所述第四发光单元对应的微腔的腔长为第四预设腔长。
可选地，所述每个发光单元对应的阳极的厚度相同。
可选地，所述第二发光层及所述第三发光层由对应的频率范围中包括红光和绿光的频率的一种发光材料构成；
所述第一发光层及所述第一工艺辅助层由对应的频率范围中包括天蓝光的频率的发光材料构成；
所述第二工艺辅助层及所述第四发光层由对应的频率范围中包括深蓝光的频率的发光材料构成。
可选地，所述第二发光层及所述第三发光层的材料包含第一发光材料和第二发光材料，所述第一发光材料为对应的频率范围中包括红光的频率的发光材料，所述第二发光材料为对应的频率范围中包括绿光的频率的发光材料；
所述第一发光层及所述第一工艺辅助层由对应的频率范围中包括天蓝光的频率的发光材料构成；
所述第二工艺辅助层及所述第四发光层由对应的频率范围中包括深蓝光的频率的发光材料构成。
可选地，所述第二发光层及所述第三发光层由对应的频率范围中包括红光和绿光的频率的一种发光材料构成；
所述第一发光层及所述第一工艺辅助层由对应的频率范围中包括天蓝光的频率的发光材料构成；
所述第二工艺辅助层及所述第四发光层由对应的频率范围中包括绿光的频率的发光材料构成。
可选地，所述第二发光层及所述第三发光层的材料包含第一发光材料和第二发光材料，所述第一发光材料为对应的频率范围中包括红光的频率的发光材料，所述第二发光材料为对应的频率范围中包括绿光的频率的发光材料；
所述第一发光层及所述第一工艺辅助层由对应的频率范围中包括天蓝光的频率的发光材料构成；
所述第二工艺辅助层及所述第四发光层由对应的频率范围中包括绿光的频率的发光材料构成。
可选地，所述第一阻挡层防止载流子和激子传输到所述第一工艺 辅助层，并且所述第二阻挡层防止载流子和激子传输到所述第二工艺辅助层。
在第二方面，提供了一种显示设备，所述显示设备包括上述显示基板。
在第三方面，提供了一种显示基板的制备方法，所述显示基板包括多个像素，每个像素划分有多个发光单元，所述方法包括：
将每个发光单元的第一电极形成在基板上，通过镀膜加工方式，在所述第一电极的上层，形成载流子传输层；
通过镀膜加工方式，在所述多个发光单元中的部分发光单元的载流子传输层的上层，形成发光层；
通过镀膜加工方式，在所述部分发光单元中的至少一个发光单元的发光层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层；其中，所述至少一个发光单元中包括一个发光层和一个工艺辅助层，所述工艺辅助层与其它发光单元中的发光层是使用相同的材料经过一次镀膜形成的一个整体；
在每个发光单元的发光层的上层形成第二电极。
可选地，所述通过镀膜加工方式，在所述部分发光单元中的至少一个发光单元的发光层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层，包括：
通过镀膜加工方式，在所述部分发光单元中的至少一个发光单元的发光层的上层，形成用于阻挡第一载流子和激子的阻挡层；
通过镀膜加工方式，在所述至少一个发光单元的阻挡层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层。
可选地，所述多个发光单元分别为第一发光单元、第二发光单元、第三发光单元和第四发光单元；
并且所述在所述多个发光单元中的部分发光单元的载流子传输层的上层，形成发光层，包括：
在所述第二发光单元的载流子传输层的上层形成第二发光层，在所述第三发光单元的载流子传输层的上层形成第三发光层；其中，所述第二发光层和所述第三发光层是使用相同的材料经过一次镀膜形成的一个整体。
可选地，所述在所述部分发光单元中的至少一个发光单元的发光层的上层，形成用于阻挡第一载流子和激子的阻挡层，包括：
在所述第二发光层的上层形成用于阻挡第一载流子和激子的第一阻挡层，在所述第三发光层的上层形成用于阻挡第一载流子和激子的第二阻挡层；其中，所述第一阻挡层与所述第二阻挡层是使用相同的材料经过一次镀膜形成的一个整体。
可选地，所述在所述至少一个发光单元的阻挡层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层，包括：
在所述第一阻挡层的上层形成第一工艺辅助层，在所述第一发光单元的载流子传输层的上层形成第一发光层，在所述第二阻挡层的上层形成第二工艺辅助层，在所述第四发光单元的载流子传输层的上层形成第四发光层；其中，所述第一发光层和所述第一工艺辅助层是使用相同的材料经过一次镀膜形成的一个整体，所述第二工艺辅助层和所述第四发光层是使用相同的材料经过一次镀膜形成的一个整体。
可选地，所述载流子传输层为空穴传输层，所述第一电极为阳极，所述第二电极为阴极，所述第一载流子为空穴；
并且所述在所述第一电极的上层，形成载流子传输层，包括：
在所述第一发光单元中的第一电极的上层形成第一空穴传输层，在所述第二发光单元中的第一电极的上层形成第三空穴传输层，在所述第三发光单元中的第一电极的上层形成第六空穴传输层，在所述第四发光单元中的第一电极的上层形成第八空穴传输层；其中，所述第一空穴传输层、所述第三空穴传输层、所述第六空穴传输层及所述第八空穴传输层是使用相同的材料经过一次镀膜形成的一个整体；
在所述第一发光单元中的所述第一空穴传输层的上层形成第二空穴传输层，在所述第二发光单元中的所述第三空穴传输层的上层形成第四空穴传输层；其中，所述第二空穴传输层及所述第四空穴传输层是使用相同的材料经过一次镀膜形成的一个整体；
在所述第二发光单元中的所述第四空穴传输层的上层形成第五空穴传输层，在所述第三发光单元中的所述第六空穴传输层的上层形成第七空穴传输层；其中，所述第五空穴传输层及所述第七空穴传输层是使用相同的材料经过一次镀膜形成的一个整体。
可选地，所述第一电极为阳极，所述第二电极为阴极，所述载流子传输层为空穴传输层；
并且所述在每个发光单元的发光层的上层形成第二电极，包括：
在每个发光单元的发光层的上层依次形成电子传输层和第二电极。
在第四方面，提供了一种发光部件的制备方法，所述发光部件包括多个发光单元，所述方法包括：
将每个发光单元的第一电极形成在基板上，通过镀膜加工方式，在所述第一电极的上层，形成载流子传输层；
通过镀膜加工方式，在所述多个发光单元中的部分发光单元的载流子传输层的上层，形成发光层；
通过镀膜加工方式，在所述部分发光单元中的至少一个发光单元的发光层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层；其中，所述至少一个发光单元中包括一个发光层和一个工艺辅助层，所述工艺辅助层与其它发光单元中的发光层是使用相同的材料经过一次镀膜形成的一个整体；
在每个发光单元的发光层的上层形成第二电极。
优选地，所述发光部件为OLED。
本发明实施例提供的技术方案带来的有益效果是：
本发明实施例中，可以在一个发光单元中设置多个发光层，其中的发光层可以与相邻发光单元的发光层通过一次镀膜成形。也就是说，相邻两个或更多发光单元的发光层宽度之和为镀膜宽度。这样，每个发光部件在基板上的宽度可以低于镀膜宽度下限与发光单元数目的乘积，从而可以提高显示分辨率。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的一种显示基板的部分结构示意图；
图2是本发明实施例提供的一种显示基板的部分结构示意图；
图3是本发明实施例提供的一种显示基板的部分结构示意图；
图4是本发明实施例提供的一种显示基板的制备方法的流程图；
图5是本发明实施例提供的一种显示基板的制备方法的流程图。
图例说明：
1、发光单元            101、第一发光单元    102、第二发光单元
103、第三发光单元      104、第四发光单元    2、阳极
3、载流子传输层        4、发光层            401、第一发光层
402、第二发光层        403、第三发光层      404、第四发光层
5、阴极                6、工艺辅助层        601、第一工艺辅助层
602、第二工艺辅助层    7、空穴传输层        701、第一空穴传输层
702、第二空穴传输层    703、第三空穴传输层  704、第四空穴传输层
705、第五空穴传输层    706、第六空穴传输层  707、第七空穴传输层
708、第八空穴传输层    8、电子传输层        9、基板
10、阻挡层             1001、第一阻挡层     1002、第二阻挡层
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
实施例一
本发明实施例提供了一种显示基板，该显示基板包括多个像素，每个像素划分有多个发光单元1。如图1的剖面图所示，每个发光单元1包括布置在基板9上的阳极2、载流子传输层3、发光层4和阴极5，其中：该多个发光单元1中的至少一个发光单元1中包括一个发光层4和至少一个工艺辅助层6；上述工艺辅助层6与其它发光单元1中的发 光层4是使用相同的材料经过一次镀膜形成的一个整体。
本发明实施例中，可以在发光单元中设置多个发光层，其中的发光层可以与相邻发光单元的发光层通过一次镀膜成形。也就是说，相邻两个或更多发光单元的发光层宽度之和为镀膜宽度，这样，每个发光部件在基板上的宽度可以低于镀膜宽度下限与发光单元数目的乘积，从而可以提高显示分辨率。
实施例二
下面将结合具体实施方式，对图1所示的显示基板中的任一个像素进行详细的说明。该显示基板包括多个像素，每个像素划分有多个发光单元1。每个发光单元1包括布置在基板9上的阳极2、载流子传输层3、发光层4和阴极5。其中：该多个发光单元1中的至少一个发光单元1中包括一个发光层4和至少一个工艺辅助层6；上述工艺辅助层6与其它发光单元1中的发光层4是使用相同的材料经过一次镀膜形成的一个整体。
其中，一个像素可以由一个发光部件构成，该发光部件可以为OLED。阳极2的材料可以由金属、金属化合物或导电聚合物等构成，如氧化铟锡(ITO)、氧化铟锌(IZO)或铝(A1)等。载流子传输层3可以包括空穴传输层7和电子传输层7，其中，空穴传输层7可以由用于传输空穴并阻挡电子的有机材料构成，电子传输层7可以由用于传输电子并阻挡空穴的有机材料构成。发光层4可以由荧光基质材料构成，该荧光基质材料可以在被激子触发的状态下发出一定频率范围的光。阴极5可以由某些活泼金属构成，如银、镁等，可以根据实际需求将上述阳极或阴极设置为透明电极或半透明电极。其它发光单元1可以为除存在的至少一个发光层4所在的发光单元1外的发光单元1，如，其它发光单元1可以为相邻的发光单元1。工艺辅助层6可以是一个不用于发光的发光层。
在实施中，在如图1所示的OLED发光部件的结构中，有两个发光单元1中分别包括一个发光层4和至少一个工艺辅助层6，其中发光层4和工艺辅助层6可以纵向(即垂直基板9的方向)设置，工艺辅助层6可以不发光，发光层4发光。上述结构中，相邻两个或多个发光单元1的发光层4与工艺辅助层6可以是一次镀膜形成的一个整体， 所以他们的宽度之和可以为镀膜宽度，这样，每个发光部件在基板9上的宽度可以低于镀膜宽度下限与发光单元数目的乘积。
可选地，为了提高OLED的发光效率，可以对同一个发光单元中包含两个不同基色的发光层之间设置一个阻挡层10，如图2所示。具体地，上述发光层4和工艺辅助层6之间包含有用于阻挡第一载流子和激子的阻挡层10；其中，第一载流子为空穴或电子。
其中，阻挡层10可以由阻挡第一载流子和激子并传输第二载流子的有机材料构成，其中，第一载流子与第二载流子不同，即如果第一载流子为空穴，则第二载流子为电子，如果第一载流子为电子，则第二载流子为空穴。
在实施中，如图2所示，为了阻止阳极2产生的空穴被传输到远离阳极2的工艺辅助层6中使得工艺辅助层6发光，并防止在靠近阳极2的发光层4中产生的激子被传输到远离阳极2的发光层4中使得靠近阳极2的发光层4发光，可以在此发光层4和工艺辅助层6之间设置一层阻挡层10。
可选地，上述多个发光单元1可以为四个发光单元，每个发光单元1中的发光层4排布方式可以如下。如图3所示，上述多个发光单元1分别为第一发光单元101、第二发光单元102、第三发光单元103和第四发光单元104。第一发光单元101的发光层4包括第一发光层401，第二发光单元102中包括第二发光层402及第一工艺辅助层601，第三发光单元103中包括第三发光层403及第二工艺辅助层602，第四发光单元104中包括第四发光层404；其中，第一发光层401和第一工艺辅助层601是使用相同的材料经过一次镀膜形成的一个整体，第二发光层402和第三发光层403是使用相同的材料经过一次镀膜形成的一个整体，第二工艺辅助层602和第四发光层404是使用相同的材料经过一次镀膜形成的一个整体。
在实施中，OLED发光部件中可以包括四个发光单元1，该OLED发光部件可以称为四像素型OLED发光部件。每个发光单元1中的阳极2的宽度可以小于或等于镀膜宽度的1/2。第一发光层401和第一工艺辅助层601是使用相同的材料经过一次镀膜形成的一个整体，它俩的宽度之和可以等于镀膜宽度。第二发光层402和第三发光层403是使用相同的材料经过一次镀膜形成的一个整体，它俩的宽度之和可以 等于镀膜宽度。第二工艺辅助层602和第四发光层404是使用相同的材料经过一次镀膜形成的一个整体，它俩的宽度之和可以等于镀膜宽度。另外，载流子传输层3的具体分布方式可以在上述结构基础上根据需求任意设置。载流子传输层3和阴极5的宽度可以为镀膜宽度的2倍。
当第二发光单元102中的阳极2和阴极5通电时，空穴由阳极2通过空穴传输层7传输到第二发光层402，电子由阴极5通过电子传输层8传输到第二发光层402，在第二发光层402中空穴与电子结合成激子，并激发第二发光层402发光，进一步，由于第一阻挡层1001的存在，使得空穴和激子无法传输到第一工艺辅助层601，因此第一工艺辅助层601不能发光。同理，第三发光单元103中第三发光层403可以发光，而第二工艺辅助层602可以不发光。
需要说明的是，上述OLED发光部件的结构中，可以不设置阻挡层10，这样，同一个发光单元1中会包含有一个发光层4和至少一个工艺辅助层6，两者彼此相邻，技术人员可以选择合适的材料，可以通过两层使用的材料的载流子传输特性和/或二者间的能级关系来使阳极2的空穴或者阴极5的电子不能或很难到达工艺辅助层6，从而实现一个发光单元1中只有发光层4发光，例如，以图3的OLED结构为例，可以选择第二发光层402和第三发光层403可以由传输空穴速率较快，而传输电子的速率很慢的发光材料构成，相应的，第一发光层401和第一工艺辅助层601，以及第二工艺辅助层602和第四发光层404可以由传输电子速率较快，而传输空穴的速率很慢的发光材料构成。这样，可以一定程度上保证第二发光单元102中第二发光层402发光，而第一工艺辅助层601可以不发光，以及第三发光单元103中第三发光层403可以发光，而第二工艺辅助层602可以不发光。
可选地，基于上述发光部件中的发光层的排布方式，为了提高OLED的发光效率，可以在发光层之间设置阻挡层，具体可以包括以下内容：第二发光层402与第一工艺辅助层601之间包括第一阻挡层1001，第三发光层403与第二工艺辅助层602之间包括第二阻挡层1002；其中，第一阻挡层1001和第二阻挡层1002是使用相同的材料经过一次镀膜形成的一个整体。
在实施中，第一阻挡层1001和第二阻挡层1002是使用相同的材 料经过一次镀膜形成的一个整体，它俩的宽度之和可以等于镀膜宽度。
可选地，发光部件中的发光层的排布除使用上述排布方式外，还可以是使用其它排布方式，以下还提供一种可选的排布方式，具体可以包括以下内容：第一发光单元中可以包括第一发光层，第二发光单元可以包括第二发光层，第三发光单元可以包括第三发光层，第四发光单元可以包括工艺辅助层和第四发光层，工艺辅助层和第四发光层之间可以设置阻挡层，其中，第三发光层和工艺辅助层是使用相同的材料经过一次镀膜形成的一个整体。
可选地，基于上述发光层4的具体排布方式，该OLED发光部件中的载流子传输层3的结构可以多种多样，以下提供一种可选的载流子传输层3的结构，如果载流子传输层3包括空穴传输层7，第一载流子为空穴，则可以如图3所示：第一发光单元101的空穴传输层7包括第一空穴传输层701及第二空穴传输层702，第二发光单元102的空穴传输层7包括第三空穴传输层703、第四空穴传输层704及第五空穴传输层705，第三发光单元103的空穴传输层7包括第六空穴传输层706及第七空穴传输层707，第四发光单元104的空穴传输层7包括第八空穴传输层708；其中，第一空穴传输层701、第三空穴传输层703、第六空穴传输层706及第八空穴传输层708是使用相同的材料经过一次镀膜形成的一个整体，第二空穴传输层702及第四空穴传输层704是使用相同的材料经过一次镀膜形成的一个整体，第五空穴传输层705及第七空穴传输层707是使用相同的材料经过一次镀膜形成的一个整体。
在实施中，可以在各个发光单元1中设置空穴传输层7，其排布方式可以多种多样，具体地，可以选择某些具有传输空穴能力的有机材料作为构成空穴传输层7的材料，可以通过镀膜加工方式形成空穴传输层7，如真空热蒸镀等。第一空穴传输层701、第三空穴传输层703、第六空穴传输层706及第八空穴传输层708是使用相同的材料经过一次镀膜形成的一个整体，它们的宽度之和可以等于镀膜宽度的2倍。第二空穴传输层702及第四空穴传输层704是使用相同的材料经过一次镀膜形成的一个整体，它们的宽度之和可以等于镀膜宽度。第五空穴传输层705及第七空穴传输层707是使用相同的材料经过一次镀膜形成的一个整体，它们的宽度之和可以等于镀膜宽度。采用上述结构， 可以在保证每个发光单元1的基色的基础上，通过合理设置每个空穴传输层7厚度、阳极2厚度等，此时，每个阳极2的厚度可以相同，也可以不同，而且，在保证每个发光单元1的基色的基础上，还可以在发光层与阴极之间设置电子传输层8。
在另一种OLED发光部件的结构中，载流子传输层3可以包括电子传输层8，该电子传输层8的排布方式可以与上述空穴传输层7的排布方式相同，具体可以参见上述空穴传输层7的排布方式，在此不再赘述。
需要说明的是，图1、图2和图3只是本发明实施例中发光器件的逻辑结构示意图，在发光部件的实体结构中，相邻各层之间不存在空腔，例如，图3中，第一发光单元101中的第一发光层401与第二空穴传输层702之间的空腔、第三发光单元103中的第六空穴传输层706与第七空穴传输层707之间的空腔和第四发光单元104中的第八空穴传输层708与第四发光层404之间的空腔在发光部件的实体结构中不存在。
需要说明的是，上述OLED发光部件仅是显示基板中的一个像素，可以制备相同的上述多个OLED发光部件构成显示基板的多个像素，其中，各个像素在显示基板上的排布规则和排布方式可以由技术人员根据实际情况设定。
可选地，基于上述OLED发光部件的结构，每个发光单元1对应的阳极2的结构可以多种多样，以下提供一种可选的结构，具体可以如下：每个发光单元1对应的阳极2的厚度相同。
这样的结构可以简化阳极2的刻蚀工艺。
需要说明的是，如果上述如图3所示的OLED发光部件为顶发光型OLED，阳极由ITO玻璃构成，则可以在ITO玻璃基片与基板之间设置不透明的反射电极，用于将发光层发出的光反射至OLED发光部件的顶层，即阴极所在位置，此时，阴极可以是透明或半透明电极。
可选地，基于上述的发光层4的具体排布方式，对于每个发光层4的材料选择方式可以多种多样，以下给出了几种可行的方式。
在方式一中，第二发光层402及第三发光层403由对应的频率范围中包括红光和绿光的频率的一种发光材料构成；或者，第二发光层402及所述第三发光层403的材料包含第一发光材料和第二发光材料， 所述第一发光材料为对应的频率范围中包括红光的频率的发光材料，所述第二发光材料为对应的频率范围中包括绿光的频率的发光材料。第一发光层401及第一工艺辅助层601由对应的频率范围中包括天蓝光的频率的发光材料构成；第二工艺辅助层602及第四发光层404由对应的频率范围中包括深蓝光的频率的发光材料构成。其中，天蓝光为波长位于470纳米到485纳米范围中的光，深蓝光为波长位于450纳米到465纳米范围中的光。
在实施中，OLED发光部件中的发光层4可以是由发光材料通过镀膜加工方式构成，其中的发光材料具体可以为有机材料，例如，聚合物8-羟基喹啉铝(Alq3)是发光材料，该发光材料可以在被激子触发的情况下发出一定频率范围的光。在实际应用中，对于某些发光材料，可以在其对应的频率范围内选择一个基色作为某一个发光单元1的基色，也可以在其对应的频率范围内选择两个基色分别作为某两个发光单元1的基色。这样，第二发光层402和第三发光层403虽然是使用相同材料通过一次镀膜形成的一个整体，但由于该材料的发光频率包括红光和绿光的频率，所以它在不同的发光单元1中可以用于不同基色的发光，具体是发红光还是绿光，取决于相应发光单元对应的微腔的腔长的大小，其中，微腔可以为微型谐振腔，腔长可以为上述微腔中反射光的两个界面之间的垂直距离。
可以将对应的频率范围内包括红光的频率的发光材料(即第一发光材料)与对应的频率范围内包括绿光的频率的发光材料(即第二发光材料)混合，制备成一个整体，这样，第二发光层402和第三发光层403可以是使用上述混合后的材料通过一次镀膜形成的一个整体，具体是第一发光材料产生的红光可以从透明电极发出，还是第二发光材料产生的绿光可以从透明电极发出，取决于相应发光单元对应的微腔的腔长的大小。
在方式二中，第二发光层402及第三发光层403由对应的频率范围中包括红光和绿光的频率的一种发光材料构成；或者，第二发光层402及第三发光层403的材料包含第一发光材料和第二发光材料，第一发光材料为对应的频率范围中包括红光的频率的发光材料，第二发光材料为对应的频率范围中包括绿光的频率的发光材料。第一发光层401及第一工艺辅助层601由对应的频率范围中包括天蓝光的频率的发光 材料构成；第二工艺辅助层602及第四发光层404由对应的频率范围中包括绿光的频率的发光材料构成。
在实施中，可以通过对发光单元对应的微腔的腔长进行调整，使得上述OLED发光部件的第一发光单元101发出绿光，这样，OLED发光部件各个发光单元对应的基色可以为天蓝-绿-红-绿，由于显示基板上设置有多个OLED发光部件，而每个OLED发光部件中各个发光单元对应的基色为天蓝-绿-红-绿，上述设置方式也是一种常用的提高显示分辨率的方式，因此，可以在一定程度上提高显示设备的分辨率。
可选地，基于上述的发光层4的具体排布方式，可以对该OLED发光部件中每个发光单元对应的微腔的腔长进行设置，具体的设置方式可以如下：第一发光单元101对应的微腔的腔长为第一预设腔长，第二发光单元102对应的微腔的腔长为第二预设腔长，第三发光单元103对应的微腔的腔长为第三预设腔长，第四发光单元104对应的微腔的腔长为第四预设腔长。
在实施中，可以通过调整每个发光单元中载流子传输层和/或阳极等的厚度的方式，对相应发光单元对应的微腔的腔长进行设置，每个发光单元对应的微腔的腔长的数值，可以决定相应发光单元对应的基色。
本发明实施例中，可以在发光单元中设置多个发光层，其中的发光层可以与相邻发光单元的发光层通过一次镀膜成形，也就是说相邻两个或更多发光单元的发光层宽度之和为镀膜宽度，这样，每个发光部件在基板上的宽度可以低于镀膜宽度下限与发光单元数目的乘积，从而可以提高显示分辨率。
实施例三
本公开实施例还提供了一种显示设备，该显示设备包括上述实施例提供的显示基板。该显示设备可以为显示面板、显示器、智能电视、手机、平板电脑等。
本公开实施例中，可以在发光单元中设置多个发光层，其中的发光层可以与相邻发光单元的发光层通过一次镀膜成形，也就是说相邻两个或更多发光单元的发光层宽度之和为镀膜宽度，这样，每个发光部件在基板上的宽度可以低于镀膜宽度下限与发光单元数目的乘积， 从而可以提高显示分辨率。
实施例四
基于相同的技术构思，本发明实施例提供了一种显示基板的制备方法，如图4所示，该显示基板划分有多个发光单元，该方法的处理流程可以包括如下的步骤：
步骤401，将每个发光单元的第一电极形成在基板上，通过镀膜加工方式，在第一电极的上层，形成载流子传输层。
步骤402，通过镀膜加工方式，在上述多个发光单元中的部分发光单元的载流子传输层的上层，形成发光层。
步骤403，通过镀膜加工方式，在上述部分发光单元中的至少一个发光单元的发光层的上层，以及上述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层；其中，上述至少一个发光单元中包括一个发光层和一个工艺辅助层，上述工艺辅助层与其它发光单元中的发光层是使用相同的材料经过一次镀膜形成的一个整体。
步骤404，在每个发光单元的发光层的上层形成第二电极。
本发明实施例中，可以在发光单元中设置多个发光层，其中的发光层可以与相邻发光单元的发光层通过一次镀膜成形，也就是说相邻两个或更多发光单元的发光层宽度之和为镀膜宽度，这样，每个发光部件在基板上的宽度可以低于镀膜宽度下限与发光单元数目的乘积，从而可以提高显示分辨率。
实施例五
基于相同的技术构思，本发明实施例提供了一种发光部件的制备方法，该发光部件可以为OLED，该发光部件可以划分有多个发光单元。
下面将结合具体实施方式，对图4所示的发光部件的制备方法进行详细的说明，内容可以如下：
步骤401，将每个发光单元的第一电极形成在基板上，通过镀膜加工方式，在第一电极的上层，形成载流子传输层。
其中，第一电极可以为阳极或阴极，第一电极可以由ITO、IZO或Al等构成，镀膜加工方式可以为真空热蒸镀、有机气相淀积、旋涂或喷墨打印等。
在实施中，技术人员可以选取一个具有良好的导电性能的导电材料，例如，如果第一电极为阳极，则该导电材料可以为ITO玻璃。然后，技术人员可以根据实际需求，通过相应的加工工艺选取一定宽度和厚度的第一电极，例如，以第一电极为阳极为例，技术人员可以对该ITO玻璃进行光刻，得到ITO玻璃基片作为OLED发光部件的阳极。得到第一电极后，可以将第一电极进行清洗，除去表面的污染物，如碳等，这样有利于载流子从第一电极注入到载流子传输层、发光层等的有机材料中。再后，技术人员可以将得到的第一电极设置到基板上。进一步，技术人员可以在第一电极的上层设置载流子传输层，通常，载流子传输层由有机材料构成，技术人员可以通过镀膜加工方式，在第一电极的上层，形成载流子传输层。通常，有机材料可以分为两类，即小分子有机材料和高分子有机材料，可以通过OLED发光部件中使用的有机材料所属的类别，选择相应的镀膜加工方式，例如，对于小分子有机材料，可以使用真空热蒸镀或有机气相淀积等镀膜加工方式，形成相应的有机材料薄膜，对于高分子有机材料，可以使用旋涂或喷墨打印等镀膜加工方式，形成相应的有机材料薄膜。
步骤402，通过镀膜加工方式，在上述多个发光单元中的部分发光单元的载流子传输层的上层，形成发光层。
在实施中，上述的部分发光单元的数量如果大于一个，那么，相应的发光层可以通过一次镀膜形成，也可以通过多次镀膜分别形成。
步骤403，通过镀膜加工方式，在上述部分发光单元中的至少一个发光单元的发光层的上层，以及上述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层；其中，上述至少一个发光单元中包括一个发光层和一个工艺辅助层，上述工艺辅助层与其它发光单元中的发光层是使用相同的材料经过一次镀膜形成的一个整体。
在实施中，技术人员可以预先设定OLED发光部件中每个发光单元需要发出的光的基色，对于一个发光单元中包含有两个发光层(其中一个发光层为工艺辅助层)的情况，可以只需要一个发光层发光，例如，可以设置靠近第一电极的发光层发光，远离第一电极的发光层可以不发光，具体地，技术人员可以选择合适的发光材料，可以通过两个发光层的发光材料的载流子传输特性和/或二者间的能级关系来使阳极的空穴或者阴极的电子不能或很难到达其中的一个发光层，从而 实现一个发光单元中只有一个发光层发光，例如，以图3的OLED结构为例，可以选择第二发光层和第三发光层可以由传输空穴速率较快，而传输电子的速率很慢的发光材料构成，相应的，第一发光层和第一工艺辅助层，以及第二工艺辅助层和第四发光层可以由传输电子速率较快，而传输空穴的速率很慢的发光材料构成。上述设置发光层的发光单元至少存在一个相邻发光单元是上述部分发光单元之外的发光单元，这样，可以使用相同材料通过一次镀膜，在此发光层的上层以及其它发光单元中载流子传输层的上层形成的发光层可以为一个整体。
可选地，上述步骤403的处理过程可以多种多样，以下提供一种可选的处理方式，具体可以包括以下步骤：
步骤一，通过镀膜加工方式，在上述部分发光单元中的至少一个发光单元的发光层的上层，形成用于阻挡第一载流子和激子的阻挡层；其中，第一载流子为空穴或电子。
在实施中，为了实现上述只需要一个发光层发光的处理过程，可以在两个发光层之间设置一个阻挡层，上述阻挡层可以通过一次镀膜形成，也可以通过多次镀膜分别形成。
步骤二，通过镀膜加工方式，在上述至少一个发光单元的阻挡层的上层，以及上述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层。
上述步骤二的处理过程可以参见上述相关内容，在此不再赘述。
步骤404，在每个发光单元的发光层的上层形成第二电极。
在实施中，所有发光单元的阴极也可以是使用相同材料通过一次镀膜形成的一个整体。具体的加工方式与载流子传输层的加工方式类似，可以参见上述载流子传输层的加工方式的相关内容，在此不再赘述。
可选地，可以在发光层与第二电极之间设置其它载流子传输层，以下提供一种可选的设置方式，即如果第一电极为阳极，第二电极为阴极，载流子传输层为空穴传输层，相应的，上述步骤404的处理过程可以包括以下内容：在每个发光单元的发光层的上层依次形成电子传输层和第二电极。
需要说明的是，如果通过上述制备方法制备的如图3所示的OLED发光部件为顶发光型OLED，第一电极为阳极，且第一电极由ITO玻 璃构成，则可以在ITO玻璃基片与基板之间设置不透明的反射电极，用于将发光层发出的光反射至OLED发光部件的顶层，即阴极所在位置，此时，阴极可以是透明或半透明电极。
可选地，OLED发光部件中的多个发光单元可以分别为第一发光单元、第二发光单元、第三发光单元和第四发光单元，对应OLED发光部件的结构为图1所示结构的情况，上述步骤401～步骤404的处理过程可以具体为图5所示的处理过程，包括步骤：
步骤401，将每个发光单元的第一电极形成在基板上，通过镀膜加工方式，在第一电极的上层，形成载流子传输层。
可选地，上述形成载流子传输层的加工方法可以多种多样，如果载流子传输层为空穴传输层，第一电极为阳极，第二电极为阴极，则上述形成载流子传输层的加工方法，具体可以包括以下内容：在第一发光单元中的第一电极的上层形成第一空穴传输层，在第二发光单元中的第一电极的上层形成第三空穴传输层，在第三发光单元中的第一电极的上层形成第六空穴传输层，在第四发光单元中的第一电极的上层形成第八空穴传输层；其中，第一空穴传输层、第三空穴传输层、第六空穴传输层及第八空穴传输层是使用相同的材料经过一次镀膜形成的一个整体；在第一发光单元中的第一空穴传输层的上层形成第二空穴传输层，在第二发光单元中的第三空穴传输层的上层形成第四空穴传输层；其中，第二空穴传输层及第四空穴传输层是使用相同的材料经过一次镀膜形成的一个整体；在第二发光单元中的第四空穴传输层的上层形成第五空穴传输层，在第三发光单元中的第六空穴传输层的上层形成第七空穴传输层；其中，第五空穴传输层及第七空穴传输层是使用相同的材料经过一次镀膜形成的一个整体。
在实施中，首先，可以通过一次镀膜加工，在所有发光单元中形成空穴传输层，此形成的空穴传输层为一个整体。然后，可以再通过一次镀膜加工，在第一发光单元和第二发光单元中形成空穴传输层，此形成的空穴传输层为一个整体。最后，可以再通过一次镀膜加工，在第二发光单元和第三发光单元中形成空穴传输层，此形成的空穴传输层为一个整体。上述所有空穴传输层可以采用相同的材料。上述每一次镀膜加工的镀膜厚度可以根据实际需求进行预先设置。
步骤402’，通过镀膜加工方式，在第二发光单元的载流子传输层 的上层形成第二发光层，在第三发光单元的载流子传输层的上层形成第三发光层；其中，第二发光层和第三发光层是使用相同的材料经过一次镀膜形成的一个整体。
在实施中，第二发光层和第三发光层可以由对应的频率范围中包括两种不同基色光的频率的一种发光材料构成，也可以由两种不同的发光材料混合而成，例如，第二发光层和第三发光层可以由对应的频率范围中包括红光和绿光的频率的一种发光材料构成，或者第二发光层和第三发光层的材料包括第一发光材料和第二发光材料，其中，第一发光材料可以为对应的频率范围中包括红光的频率的发光材料，第二发光材料可以为对应的频率范围中包括绿光的频率的发光材料。第二发光层和第三发光层虽然具有相同材料，但是他们各自所在的发光单元可以发出不同基色的光，相应的过程可以参见上述实施例二中的相关内容，在此不再赘述。
步骤403’，通过镀膜加工方式，在第二发光层的上层形成用于阻挡第一载流子和激子的第一阻挡层，在第三发光层的上层形成用于阻挡第一载流子和激子的第二阻挡层；其中，第一阻挡层与第二阻挡层是使用相同的材料经过一次镀膜形成的一个整体。
在实施中，可以使用具有阻挡第一载流子和激子并传输第二载流子的有机材料，通过镀膜加工方式形成阻挡层，其中，第一载流子与第二载流子不同，即如果第一载流子为空穴，则第二载流子为电子，如果第一载流子为电子，则第二载流子为空穴。第一阻挡层与第二阻挡层的宽度之和可以等于镀膜宽度。由于阻挡层的存在，可以阻挡第一载流子由第一电极传输到第三发光层后，再向其它发光层传输，从而保证一个发光单元中只有发光层可以发光。
步骤404’，通过镀膜加工方式，在第一阻挡层的上层形成第一工艺辅助层，在第一发光单元的载流子传输层的上层形成第一发光层，在第二阻挡层的上层形成第二工艺辅助层，在第四发光单元的载流子传输层的上层形成第四发光层；其中，第一发光层和第一工艺辅助层是使用相同的材料经过一次镀膜形成的一个整体，第二工艺辅助层和第四发光层是使用相同的材料经过一次镀膜形成的一个整体。
步骤405，在每个发光单元的发光层的上层形成第二电极。
基于上述流程可知，通过该流程制备的OLED发光部件在基板上 的宽度可以为镀膜宽度下限与发光单元数目的乘积的1/2，从而可以提高显示分辨率。
需要说明的是，上述发光部件的制备方法不仅可以用于制备四像素型OLED发光部件，还可以用于制备三像素型OLED发光部件，三像素型OLED发光部件的具体结构可以根据实际情况进行设置，具体处理过程在此不再赘述。
本发明实施例中，可以在发光单元中设置多个发光层，其中的发光层可以与相邻发光单元的发光层通过一次镀膜成形，也就是说相邻两个或更多发光单元的发光层宽度之和为镀膜宽度，这样，每个发光部件在基板上的宽度可以低于镀膜宽度下限与发光单元数目的乘积，从而可以提高显示分辨率。
本领域普通技术人员可以理解实现上述实施例的全部或部分步骤可以通过硬件来完成，也可以通过程序来指令相关的硬件完成，所述的程序可以存储于一种计算机可读存储介质中，上述提到的存储介质可以是只读存储器，磁盘或光盘等。
以上所述仅为本发明的较佳实施例，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (21)

  1. 一种显示基板，其特征在于，所述显示基板包括多个像素，每个像素划分有多个发光单元，每个发光单元包括阳极、阴极、载流子传输层和发光层，其中：
    所述多个发光单元中的至少一个发光单元中包括一个发光层和至少一个工艺辅助层；
    所述工艺辅助层与其它发光单元中的发光层是使用相同的材料经过一次镀膜形成的一个整体。
  2. 根据权利要求1所述的显示基板，其特征在于，所述多个发光单元分别为第一发光单元、第二发光单元、第三发光单元和第四发光单元；
    所述第一发光单元的发光层包括第一发光层，所述第二发光单元中包括第一工艺辅助层及第二发光层，所述第三发光单元中包括第三发光层及第二工艺辅助层，所述第四发光单元中包括第四发光层；
    其中，所述第一发光层和所述第一工艺辅助层是使用相同的材料经过一次镀膜形成的一个整体，所述第二发光层和所述第三发光层是使用相同的材料经过一次镀膜形成的一个整体，所述第二工艺辅助层和所述第四发光层是使用相同的材料经过一次镀膜形成的一个整体。
  3. 根据权利要求2所述的显示基板，其特征在于，所述第一工艺辅助层与所述第二发光层之间包括第一阻挡层，所述第三发光层与所述第二工艺辅助层之间包括第二阻挡层，其中，所述第一阻挡层与所述第二阻挡层是使用相同的材料经过一次镀膜形成的一个整体。
  4. 根据权利要求2所述的显示基板，其特征在于，所述载流子传输层包括空穴传输层，所述第一发光单元中的空穴传输层包括第一空穴传输层及第二空穴传输层，所述第二发光单元中的空穴传输层包括第三空穴传输层、第四空穴传输层及第五空穴传输层，所述第三发光单元中的空穴传输层包括第六空穴传输层及第七空穴传输层，所述第四发光单元的空穴传输层包括第八空穴传输层；
    其中，所述第一空穴传输层、所述第三空穴传输层、所述第六空穴传输层及所述第八空穴传输层是使用相同的材料经过一次镀膜形成的一个整体，所述第二空穴传输层及所述第四空穴传输层是使用相同 的材料经过一次镀膜形成的一个整体，所述第五空穴传输层及所述第七空穴传输层是使用相同的材料经过一次镀膜形成的一个整体。
  5. 根据权利要求4所述的显示基板，其特征在于，所述第一发光单元对应的微腔的腔长为第一预设腔长，所述二发光单元对应的微腔的腔长为第二预设腔长，所述第三发光单元对应的微腔的腔长为第三预设腔长，所述第四发光单元对应的微腔的腔长为第四预设腔长。
  6. 根据权利要求4所述的显示基板，其特征在于，所述每个发光单元对应的阳极的厚度相同。
  7. 根据权利要求2所述的显示基板，其特征在于，所述第二发光层及所述第三发光层由对应的频率范围中包括红光和绿光的频率的一种发光材料构成；；
    所述第一发光层及所述第一工艺辅助层由对应的频率范围中包括天蓝光的频率的发光材料构成；以及
    所述第二工艺辅助层及所述第四发光层由对应的频率范围中包括深蓝光的频率的发光材料构成。
  8. 根据权利要求2所述的显示基板，其特征在于，所述第二发光层及所述第三发光层的材料包含第一发光材料和第二发光材料，所述第一发光材料为对应的频率范围中包括红光的频率的发光材料，所述第二发光材料为对应的频率范围中包括绿光的频率的发光材料；
    所述第一发光层及所述第一工艺辅助层由对应的频率范围中包括天蓝光的频率的发光材料构成；以及
    所述第二工艺辅助层及所述第四发光层由对应的频率范围中包括深蓝光的频率的发光材料构成。
  9. 根据权利要求2所述的显示基板，其特征在于，所述第二发光层及所述第三发光层由对应的频率范围中包括红光和绿光的频率的一种发光材料构成；
    所述第一发光层及所述第一工艺辅助层由对应的频率范围中包括天蓝光的频率的发光材料构成；以及
    所述第二工艺辅助层及所述第四发光层由对应的频率范围中包括绿光的频率的发光材料构成。
  10. 根据权利要求2所述的显示基板，其特征在于，所述第二发光层及所述第三发光层的材料包含第一发光材料和第二发光材料，所 述第一发光材料为对应的频率范围中包括红光的频率的发光材料，所述第二发光材料为对应的频率范围中包括绿光的频率的发光材料；
    所述第一发光层及所述第一工艺辅助层由对应的频率范围中包括天蓝光的频率的发光材料构成；以及
    所述第二工艺辅助层及所述第四发光层由对应的频率范围中包括绿光的频率的发光材料构成。
  11. 根据权利要求3所述的显示基板，其特征在于，所述第一阻挡层防止载流子和激子传输到所述第一工艺辅助层，并且所述第二阻挡层防止载流子和激子传输到所述第二工艺辅助层。
  12. 一种显示设备，其特征在于，所述显示设备包括权利要求1-11中的显示基板。
  13. 一种显示基板的制备方法，其特征在于，所述显示基板包括多个像素，每个像素划分有多个发光单元，所述方法包括：
    将每个发光单元的第一电极形成在基板上，通过镀膜加工方式，在所述第一电极的上层，形成载流子传输层；
    通过镀膜加工方式，在所述多个发光单元中的部分发光单元的载流子传输层的上层，形成发光层；
    通过镀膜加工方式，在所述部分发光单元中的至少一个发光单元的发光层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层；其中，所述至少一个发光单元中包括一个发光层和一个工艺辅助层，所述工艺辅助层与其它发光单元中的发光层是使用相同的材料经过一次镀膜形成的一个整体；
    在每个发光单元的发光层的上层形成第二电极。
  14. 根据权利要求13所述的方法，其特征在于，所述通过镀膜加工方式，在所述部分发光单元中的至少一个发光单元的发光层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层，包括：
    通过镀膜加工方式，在所述部分发光单元中的至少一个发光单元的发光层的上层，形成用于阻挡第一载流子和激子的阻挡层；
    通过镀膜加工方式，在所述至少一个发光单元的阻挡层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层。
  15. 根据权利要求14所述的方法，其特征在于，所述多个发光单元分别为第一发光单元、第二发光单元、第三发光单元和第四发光单元，
    并且所述在所述多个发光单元中的部分发光单元的载流子传输层的上层，形成发光层，包括：
    在所述第二发光单元的载流子传输层的上层形成第二发光层，在所述第三发光单元的载流子传输层的上层形成第三发光层；其中，所述第二发光层和所述第三发光层是使用相同的材料经过一次镀膜形成的一个整体。
  16. 根据权利要求15所述的方法，其特征在于，所述在所述部分发光单元中的至少一个发光单元的发光层的上层，形成用于阻挡第一载流子和激子的阻挡层，包括：
    在所述第二发光层的上层形成用于阻挡第一载流子和激子的第一阻挡层，在所述第三发光层的上层形成用于阻挡第一载流子和激子的第二阻挡层；其中，所述第一阻挡层与所述第二阻挡层是使用相同的材料经过一次镀膜形成的一个整体。
  17. 根据权利要求15所述的方法，其特征在于，所述在所述至少一个发光单元的阻挡层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层，包括：
    在所述第一阻挡层的上层形成第一工艺辅助层，在所述第一发光单元的载流子传输层的上层形成第一发光层，在所述第二阻挡层的上层形成第二工艺辅助层，在所述第四发光单元的载流子传输层的上层形成第四发光层；其中，所述第一发光层和所述第一工艺辅助层是使用相同的材料经过一次镀膜形成的一个整体，所述第二工艺辅助层和所述第四发光层是使用相同的材料经过一次镀膜形成的一个整体。
  18. 根据权利要求15所述的方法，其特征在于，所述载流子传输层为空穴传输层，所述第一电极为阳极，所述第二电极为阴极，所述第一载流子为空穴；
    并且所述在所述第一电极的上层，形成载流子传输层，包括：
    在所述第一发光单元中的第一电极的上层形成第一空穴传输层，在所述第二发光单元中的第一电极的上层形成第三空穴传输层，在所述第三发光单元中的第一电极的上层形成第六空穴传输层，在所述第 四发光单元中的第一电极的上层形成第八空穴传输层；其中，所述第一空穴传输层、所述第三空穴传输层、所述第六空穴传输层及所述第八空穴传输层是使用相同的材料经过一次镀膜形成的一个整体；
    在所述第一发光单元中的所述第一空穴传输层的上层形成第二空穴传输层，在所述第二发光单元中的所述第三空穴传输层的上层形成第四空穴传输层；其中，所述第二空穴传输层及所述第四空穴传输层是使用相同的材料经过一次镀膜形成的一个整体；
    在所述第二发光单元中的所述第四空穴传输层的上层形成第五空穴传输层，在所述第三发光单元中的所述第六空穴传输层的上层形成第七空穴传输层；其中，所述第五空穴传输层及所述第七空穴传输层是使用相同的材料经过一次镀膜形成的一个整体。
  19. 根据权利要求13所述的方法，其特征在于，所述第一电极为阳极，所述第二电极为阴极，所述载流子传输层为空穴传输层；并且所述在每个发光单元的发光层的上层形成第二电极，包括：
    在每个发光单元的发光层的上层依次形成电子传输层和第二电极。
  20. 一种发光部件的制备方法，所述发光部件包括多个发光单元，所述方法包括：
    将每个发光单元的第一电极形成在基板上，通过镀膜加工方式，在所述第一电极的上层，形成载流子传输层；
    通过镀膜加工方式，在所述多个发光单元中的部分发光单元的载流子传输层的上层，形成发光层；
    通过镀膜加工方式，在所述部分发光单元中的至少一个发光单元的发光层的上层，以及所述部分发光单元之外的发光单元的载流子传输层的上层，形成发光层；其中，所述至少一个发光单元中包括一个发光层和一个工艺辅助层，所述工艺辅助层与其它发光单元中的发光层是使用相同的材料经过一次镀膜形成的一个整体；
    在每个发光单元的发光层的上层形成第二电极。
  21. 根据权利要求20所述的方法，其特征在于，所述发光部件为OLED。
PCT/CN2015/084428 2015-02-06 2015-07-20 一种显示基板及其制备方法和一种显示设备 WO2016123916A1 (zh)

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