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WO2016001969A1 - Semiconductor laser device - Google Patents

Semiconductor laser device Download PDF

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Publication number
WO2016001969A1
WO2016001969A1 PCT/JP2014/067375 JP2014067375W WO2016001969A1 WO 2016001969 A1 WO2016001969 A1 WO 2016001969A1 JP 2014067375 W JP2014067375 W JP 2014067375W WO 2016001969 A1 WO2016001969 A1 WO 2016001969A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor lasers
semiconductor
semiconductor laser
light
laser
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PCT/JP2014/067375
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French (fr)
Japanese (ja)
Inventor
廣木　知之
東條　公資
一馬 渡辺
一郎 福士
章之 門谷
隼規 坂本
次郎 齊川
直也 石垣
進吾 宇野
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株式会社島津製作所
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Priority to JP2016530694A priority Critical patent/JP6245364B2/en
Priority to PCT/JP2014/067375 priority patent/WO2016001969A1/en
Publication of WO2016001969A1 publication Critical patent/WO2016001969A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Definitions

  • the present invention relates to a semiconductor laser device.
  • Laser processing equipment performs various processes from laser beam to large-scale processing such as welding and cutting and fine processing such as marking. With the processing use of laser light, it is desired to increase the output and power consumption of a laser light source.
  • laser light sources include gas lasers, solid state lasers, and semiconductor lasers. Semiconductor lasers are superior in terms of high efficiency and ease of maintenance.
  • a laser processing apparatus using a semiconductor laser realizes high output by superimposing light outputs from a plurality of semiconductor lasers as described in Patent Document 1, for example.
  • the output can be easily increased.
  • a failure or deterioration of the semiconductor laser occurs, there is a problem that it is difficult to identify the failed or deteriorated semiconductor laser.
  • Patent Document 2 a photodiode for output detection is provided for each semiconductor laser, and the failure of each semiconductor laser is detected by monitoring the output of each photodiode.
  • Patent Document 3 a failure is detected by controlling the current supply timing to each semiconductor laser and monitoring the laser output in time series.
  • Patent Document 2 since a photodiode is added to each semiconductor laser, the apparatus is increased in size and cost. Moreover, in patent document 3, a control system circuit and an algorithm will become complicated.
  • a semiconductor laser device includes a plurality of semiconductor lasers, a drive circuit that supplies current to the plurality of semiconductor lasers, and a photosynthesis that combines the laser beams of the plurality of semiconductor lasers.
  • a light detection element for detecting laser light of the plurality of semiconductor lasers combined by the light combiner, wherein the light combiner is coupled to each of the semiconductor lasers of the plurality of semiconductor lasers in the light combiner.
  • the optical path length from each semiconductor laser to the optical combiner is set so that the light arrival time to the end differs for each semiconductor laser.
  • the optical combiner sets the optical path length from each semiconductor laser to the optical combiner so that the light arrival time from each semiconductor laser to the multiplexing end is different for each semiconductor laser. Based on the light arrival time and the light output of each semiconductor laser, it is possible to detect a failure or deterioration of a part of the plurality of semiconductor lasers, and to reduce the size and cost.
  • FIG. 1 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 1 of the present invention.
  • FIG. 2 is a diagram showing each output when each semiconductor laser of the semiconductor laser device according to the first embodiment of the present invention is normal.
  • FIG. 3 is a diagram showing each output when a part of the semiconductor lasers of the semiconductor laser of the semiconductor laser device according to the first embodiment of the present invention deteriorates.
  • FIG. 4 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 2 of the present invention.
  • FIG. 5 is a diagram showing a configuration of a semiconductor laser apparatus according to Example 3 of the present invention.
  • FIG. 6 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 4 of the present invention.
  • the principle of the present invention will be described.
  • a pulse current is applied to a plurality of semiconductor lasers, an optical output is generated from the semiconductor laser that the current reaches early. Further, the light output reaches the photodiode from the one having a short optical distance. Accordingly, the arrival time of the light output from the plurality of semiconductor lasers at the multiplexing end is shifted by arranging the optical element that changes the optical distance from the semiconductor laser connection method, the arranging method, or the semiconductor laser to the multiplexing end. be able to. That is, the failure and deterioration of the semiconductor laser can be detected by monitoring the temporal change of the light output with the photodiode.
  • FIG. 1 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 1 of the present invention.
  • the semiconductor laser device according to the first embodiment of the present invention includes a plurality of semiconductor lasers LD1 to LD4, an LD drive circuit 10, a photo combiner 11, a photodiode PD, a resistor R, and a central processing unit (CPU). 13, a memory 14, and a display unit 15.
  • the plurality of semiconductor lasers LD1 to LD4 are connected in series so that the distances LLD1, LLD2, LLD3, and LLD4 from the LD driving circuit 10 to each of the plurality of semiconductor lasers LD1 to LD4 are LLD1 ⁇ LLD2 ⁇ LLD3 ⁇ LLD4. Yes.
  • the LD drive circuit 10 supplies current to the plurality of semiconductor lasers LD1 to LD4 connected in series.
  • the plurality of semiconductor lasers LD1 to LD4 output laser light when a current flows.
  • the plurality of semiconductor lasers LD1 to LD4 and the optical combiner 11 are such that the distances SLD1, SLD2, SLD3, and SLD4 from the plurality of semiconductor lasers LD1 to LD4 to the multiplexing end in the optical combiner 11 are SLD1 ⁇ SLD2 ⁇ SLD3 ⁇ SLD4. It is arranged to be.
  • the light synthesizer 11 is composed of optical elements (mirrors, lenses, prisms, etc.) having reflection and refraction functions, and collects the light output from the plurality of semiconductor lasers LD1 to LD4 into a spot having a diameter of 500 ⁇ m or less at the multiplexing end. have.
  • the light combiner 11 combines the laser beams of the semiconductor lasers LD1 to LD4, and the light arrival time from each of the semiconductor lasers LD1 to LD4 to the multiplexing end in the light combiner 11 is for each of the semiconductor lasers LD1 to LD4.
  • the optical path lengths from the respective semiconductor lasers LD1 to LD4 to the optical combiner 11 are set.
  • the half mirror 12 separates the combined laser light from the light combiner 11 into monitor light and output light.
  • the photodiode PD corresponds to the light detection element of the present invention and detects the laser light dispersed by the half mirror 12.
  • the CPU 13 stores the output value of the laser beam detected by the photodiode PD in the memory 14 or causes the display unit 15 to display the output value.
  • the semiconductor lasers LD1 to LD4 output laser beams in the order of LD1, LD2, LD3, and LD4.
  • the first laser beam emitted from the semiconductor laser LD1 is detected by the photodiode PD first through the light combiner 11 and the half mirror 12.
  • the second laser beam output from the semiconductor laser LD2 is detected second by the photodiode PD via the photo combiner 11 and the half mirror 12.
  • the laser beam from the semiconductor laser LD3 output third is detected by the photodiode PD third through the photo combiner 11 and the half mirror 12.
  • the fourth laser light output from the semiconductor laser LD4 is detected by the photodiode PD fourth through the optical combiner 11 and the half mirror 12.
  • the output of the photodiode PD can be obtained temporally in the order of the semiconductor laser LD1, the semiconductor laser LD2, the semiconductor laser LD3, and the semiconductor laser LD4.
  • each output of the photodiode PD is a constant value.
  • the third output is lower than the other outputs, it can be determined that the semiconductor laser LD3 has deteriorated. Further, even when a semiconductor laser fails, it is possible to detect a failed semiconductor laser due to a temporal output change of the photodiode PD.
  • the line length from the LD drive circuit 10 to the semiconductor lasers LD1 to LD4 is set so that the light emission timings of the respective semiconductor lasers LD1 to LD4 are different for the semiconductor lasers LD1 to LD4.
  • the optical path length from each of the semiconductor lasers LD1 to LD4 to the optical combiner 11 is adjusted so that the light arrival time from each of the semiconductor lasers LD1 to LD4 to the multiplexing end is different for each of the semiconductor lasers LD1 to LD4.
  • FIG. 4 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 2 of the present invention.
  • the semiconductor laser device according to the second embodiment includes an LD drive circuit 10, bipolar NPN transistors Q1 and Q2, semiconductor lasers LD1 and LD2, a photosynthesizer 11a, a photodiode PD, a CPU 13, a memory 14, and a display unit 15.
  • the distance S1 between the LD drive circuit 10 and the transistor Q1 and the distance S2 between the LD drive circuit 10 and the transistor Q2 are the same.
  • the LD driving circuit 10 applies a voltage to the bases of the transistors Q1 and Q2, thereby causing a current to flow through the transistors Q1 and Q2.
  • the power source Vcc is connected to the collectors of the transistors Q1 and Q2, the anode of the semiconductor laser LD1 is connected to the emitter of the transistor Q1, and the anode of the semiconductor laser LD2 is connected to the emitter of the transistor Q2.
  • the light combiner 11a is arranged such that the distances SLD11 and SLD12 from the semiconductor lasers LD1 and LD2 to the multiplexing end in the light combiner 11 satisfy SLD11> SLD12.
  • FIG. 4 are the same as those shown in FIG. 1 because the optical combiner 11a, the photodiode PD, the CPU 13, the memory 14, and the display unit 15 shown in FIG. 4 are omitted.
  • the semiconductor laser device of the second embodiment when the transistors Q1 and Q2 are turned on by the voltage from the LD driving circuit 10, a current flows through the semiconductor lasers LD1 and LD2 simultaneously. Then, the laser beam from the semiconductor laser LD2 reaches the optical combiner 11a first. On the other hand, the laser beam from the semiconductor laser LD1 reaches the optical combiner 11a second.
  • the output first detected by the photodiode PD is the output of the laser light from the semiconductor laser LD2, and the output detected by the photodiode PD is the output of the laser light from the semiconductor laser LD1.
  • the deterioration and failure of the semiconductor lasers LD1 and LD2 can be determined by the change in output with time.
  • the distance from the LD drive circuit 10 to each of the semiconductor lasers LD1 to LD4 is set, and the distance from each of the semiconductor lasers LD1 to LD4 to the multiplexing end in the optical combiner 11 is set.
  • FIG. 5 is a diagram showing a configuration of a semiconductor laser apparatus according to Example 3 of the present invention.
  • the semiconductor laser device according to the third embodiment is different from the semiconductor laser device according to the first embodiment shown in FIG. 1 in that prisms 16a and 16b are arranged in the optical path between the semiconductor laser LD4 and the optical combiner 11.
  • the prisms 16a and 16b correspond to the optical element for adjusting light propagation according to the present invention.
  • the prisms 16a and 16b are arranged in the optical path between the semiconductor laser LD4 and the light combiner 11, light reaches between the semiconductor laser LD4 and the light combiner 11. The time can be adjusted. Therefore, it is possible to easily determine the deterioration or failure of the semiconductor lasers LD1 to LD4.
  • FIG. 6 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 4 of the present invention.
  • the semiconductor laser device according to the fourth embodiment is characterized in that the semiconductor lasers LD1 to LD4 are connected to the semiconductor laser device according to the first embodiment shown in FIG. 1 by conductive patterns PT1 to PT4 having different dielectric constants. To do.
  • the semiconductor lasers LD1 to LD4 are connected by the conductive patterns PT1 to PT4 having different dielectric constants, the current transmission times are different from each other. For this reason, the current arrival time from the drive circuit 10 to each of the semiconductor lasers LD1 to LD4 can be adjusted, so that the deterioration or failure of the semiconductor lasers LD1 to LD4 can be easily determined.
  • the present invention is applicable to laser processing machines and laser lighting equipment.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present invention is provided with: a plurality of semiconductor lasers (LD1-LD4); a drive circuit (10) that supplies a current to the semiconductor lasers; an optical synthesizer (11) that synthesizes laser beams of the semiconductor lasers; and an optical detection element (PD) that detects a synthesized laser beam of the semiconductor lasers, said laser beam having been synthesized by means of the optical synthesizer. The optical synthesizer sets optical path lengths from respective semiconductor lasers to a multiplexing end in the optical synthesizer such that semiconductor laser beam travelling times from respective semiconductor lasers to the multiplexing end vary by each of the semiconductor lasers.

Description

半導体レーザ装置Semiconductor laser device
　本発明は、半導体レーザ装置に関する。 The present invention relates to a semiconductor laser device.
　レーザ加工装置は、レーザ光により、溶接や切断等の大口加工や、マーキング等の微細加工まで様々な加工を行う。レーザ光の加工利用に伴って、レーザ光源の高出力化や低消費電力化が望まれている。レーザ光源としては、ガスレーザ、固体レーザ、半導体レーザなどがある。高効率であることやメンテナンスの容易さの面で半導体レーザに優位性がある。 Laser processing equipment performs various processes from laser beam to large-scale processing such as welding and cutting and fine processing such as marking. With the processing use of laser light, it is desired to increase the output and power consumption of a laser light source. Examples of laser light sources include gas lasers, solid state lasers, and semiconductor lasers. Semiconductor lasers are superior in terms of high efficiency and ease of maintenance.
　半導体レーザを用いたレーザ加工装置は、例えば、特許文献１に記載されるように複数の半導体レーザからの光出力を重ね合わせることで高出力を実現する。複数の半導体レーザを使用する場合、容易に高出力化できる。しかし、半導体レーザの故障や劣化が発生した場合に、故障、劣化した半導体レーザを特定することが困難であるという課題を有している。 A laser processing apparatus using a semiconductor laser realizes high output by superimposing light outputs from a plurality of semiconductor lasers as described in Patent Document 1, for example. When a plurality of semiconductor lasers are used, the output can be easily increased. However, when a failure or deterioration of the semiconductor laser occurs, there is a problem that it is difficult to identify the failed or deteriorated semiconductor laser.
　この課題に対して、複数の半導体レーザを使用する場合、特許文献２、特許文献３に記載されるように、半導体レーザの故障を検知する装置を付加することで、装置としてのメンテナンス性や信頼性を高めることができる。 In response to this problem, when a plurality of semiconductor lasers are used, as described in Patent Document 2 and Patent Document 3, by adding a device for detecting a failure of the semiconductor laser, maintainability and reliability as a device are improved. Can increase the sex.
　特許文献２においては、各々の半導体レーザに対して出力検知用のフォトダイオードを設け、各々のフォトダイオードの出力をモニタすることで各々の半導体レーザの故障を検知している。また、特許文献３においては、各々の半導体レーザに対する電流供給タイミングを制御し、レーザ出力を時系列でモニタすることで故障を検知している。 In Patent Document 2, a photodiode for output detection is provided for each semiconductor laser, and the failure of each semiconductor laser is detected by monitoring the output of each photodiode. In Patent Document 3, a failure is detected by controlling the current supply timing to each semiconductor laser and monitoring the laser output in time series.
特開２０１３－４８１５９号公報JP2013-48159A 特開２００４－２１４２２５号公報JP 2004-214225 A 特開平６－１６０２３７号公報JP-A-6-160237
　しかしながら、特許文献２にあっては、各々の半導体レーザに対してフォトダイオードを付加するため、装置が大型化及び高コスト化する。また、特許文献３にあっては、制御系回路及びアルゴリズムが複雑化してしまう。 However, in Patent Document 2, since a photodiode is added to each semiconductor laser, the apparatus is increased in size and cost. Moreover, in patent document 3, a control system circuit and an algorithm will become complicated.
　本発明は、複数の半導体レーザの一部の故障や劣化を検知でき、しかも小型化及び低コスト化を図ることができる半導体レーザ装置を提供することを目的とする。 It is an object of the present invention to provide a semiconductor laser device that can detect a failure or deterioration of a part of a plurality of semiconductor lasers and that can be reduced in size and cost.
　上記の課題を解決するために、本発明に係る半導体レーザ装置は、複数の半導体レーザと、前記複数の半導体レーザに電流を供給する駆動回路と、前記複数の半導体レーザのレーザ光を合成する光合成器と、前記光合成器で合成された前記複数の半導体レーザのレーザ光を検知する光検知素子を備え、前記光合成器は、前記複数の半導体レーザの各々の半導体レーザから前記光合成器内の合波端までの光到達時間が前記各々の半導体レーザ毎に異なるように、前記各々の半導体レーザから前記光合成器までの光路長を設定する。 In order to solve the above problems, a semiconductor laser device according to the present invention includes a plurality of semiconductor lasers, a drive circuit that supplies current to the plurality of semiconductor lasers, and a photosynthesis that combines the laser beams of the plurality of semiconductor lasers. And a light detection element for detecting laser light of the plurality of semiconductor lasers combined by the light combiner, wherein the light combiner is coupled to each of the semiconductor lasers of the plurality of semiconductor lasers in the light combiner. The optical path length from each semiconductor laser to the optical combiner is set so that the light arrival time to the end differs for each semiconductor laser.
　本発明によれば、光合成器は、各々の半導体レーザから合波端までの光到達時間が各々の半導体レーザ毎に異なるように、各々の半導体レーザから光合成器までの光路長を設定するので、各々の半導体レーザの光到達時間と光出力とに基づき、複数の半導体レーザの一部の故障や劣化を検知でき、しかも小型化及び低コスト化を図ることができる。 According to the present invention, the optical combiner sets the optical path length from each semiconductor laser to the optical combiner so that the light arrival time from each semiconductor laser to the multiplexing end is different for each semiconductor laser. Based on the light arrival time and the light output of each semiconductor laser, it is possible to detect a failure or deterioration of a part of the plurality of semiconductor lasers, and to reduce the size and cost.
図１は本発明の実施例１に係る半導体レーザ装置の構成を示す図である。FIG. 1 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 1 of the present invention. 図２は本発明の実施例１に係る半導体レーザ装置の各半導体レーザが正常である場合の各出力を示す図である。FIG. 2 is a diagram showing each output when each semiconductor laser of the semiconductor laser device according to the first embodiment of the present invention is normal. 図３は本発明の実施例１に係る半導体レーザ装置の各半導体レーザの内の一部の半導体レーザが劣化した場合の各出力を示す図である。FIG. 3 is a diagram showing each output when a part of the semiconductor lasers of the semiconductor laser of the semiconductor laser device according to the first embodiment of the present invention deteriorates. 図４は本発明の実施例２に係る半導体レーザ装置の構成を示す図である。FIG. 4 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 2 of the present invention. 図５は本発明の実施例３に係る半導体レーザ装置の構成を示す図である。FIG. 5 is a diagram showing a configuration of a semiconductor laser apparatus according to Example 3 of the present invention. 図６は本発明の実施例４に係る半導体レーザ装置の構成を示す図である。FIG. 6 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 4 of the present invention.
　以下、本発明の実施形態に係る半導体レーザ装置が図面を参照しながら詳細に説明される。 Hereinafter, a semiconductor laser device according to an embodiment of the present invention will be described in detail with reference to the drawings.
　まず、本発明の原理を説明する。複数の半導体レーザにパルス電流を与えると、電流が早く到達する半導体レーザから光出力を生じる。また、光出力は光学的距離が短いものからフォトダイオードに到達する。従って、半導体レーザの接続方法、配置方法又は半導体レーザから合波端までに光学的距離を変化させる光学素子を配置することで、合波端における複数の半導体レーザからの光出力の到達時間をずらすことができる。即ち、光出力の時間的変化をフォトダイオードでモニタすることで半導体レーザの故障、劣化を検出することができる。 First, the principle of the present invention will be described. When a pulse current is applied to a plurality of semiconductor lasers, an optical output is generated from the semiconductor laser that the current reaches early. Further, the light output reaches the photodiode from the one having a short optical distance. Accordingly, the arrival time of the light output from the plurality of semiconductor lasers at the multiplexing end is shifted by arranging the optical element that changes the optical distance from the semiconductor laser connection method, the arranging method, or the semiconductor laser to the multiplexing end. be able to. That is, the failure and deterioration of the semiconductor laser can be detected by monitoring the temporal change of the light output with the photodiode.
（実施例１）
　図１は本発明の実施例１に係る半導体レーザ装置の構成を示す図である。本発明の実施例１に係る半導体レーザ装置は、図１に示すように、複数の半導体レーザＬＤ１～ＬＤ４、ＬＤ駆動回路１０、光合成器１１、フォトダイオードＰＤ、抵抗Ｒ、中央処理装置（ＣＰＵ）１３、メモリ１４、表示部１５を備える。 (Example 1)
FIG. 1 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 1 of the present invention. As shown in FIG. 1, the semiconductor laser device according to the first embodiment of the present invention includes a plurality of semiconductor lasers LD1 to LD4, an LD drive circuit 10, a photo combiner 11, a photodiode PD, a resistor R, and a central processing unit (CPU). 13, a memory 14, and a display unit 15.
　複数の半導体レーザＬＤ１～ＬＤ４は、ＬＤ駆動回路１０から複数の半導体レーザＬＤ１～ＬＤ４の各々までの距離ＬLD1，ＬLD2，ＬLD3，ＬLD4がＬLD1＜ＬLD2＜ＬLD3＜ＬLD4となるように直列に接続されている。ＬＤ駆動回路１０は、直列に接続された複数の半導体レーザＬＤ１～ＬＤ４に電流を供給する。複数の半導体レーザＬＤ１～ＬＤ４は、電流が流れることによりレーザ光を出力する。 The plurality of semiconductor lasers LD1 to LD4 are connected in series so that the distances LLD1, LLD2, LLD3, and LLD4 from the LD driving circuit 10 to each of the plurality of semiconductor lasers LD1 to LD4 are LLD1 <LLD2 <LLD3 <LLD4. Yes. The LD drive circuit 10 supplies current to the plurality of semiconductor lasers LD1 to LD4 connected in series. The plurality of semiconductor lasers LD1 to LD4 output laser light when a current flows.
　また、複数の半導体レーザＬＤ１～ＬＤ４と光合成器１１は、複数の半導体レーザＬＤ１～ＬＤ４から光合成器１１内の合波端までの距離ＳLD1，ＳLD2，ＳLD3，ＳLD4がＳLD1＜ＳLD2＜ＳLD3＜ＳLD4となるように配置されている。 The plurality of semiconductor lasers LD1 to LD4 and the optical combiner 11 are such that the distances SLD1, SLD2, SLD3, and SLD4 from the plurality of semiconductor lasers LD1 to LD4 to the multiplexing end in the optical combiner 11 are SLD1 <SLD2 <SLD3 <SLD4. It is arranged to be.
　光合成器１１は、反射、屈折の作用を持つ光学素子（ミラーやレンズ，プリズムなど）からなり、複数の半導体レーザＬＤ１～ＬＤ４から出力された光を合波端において直径５００μｍ以下のスポットに集める機能を持つ。 The light synthesizer 11 is composed of optical elements (mirrors, lenses, prisms, etc.) having reflection and refraction functions, and collects the light output from the plurality of semiconductor lasers LD1 to LD4 into a spot having a diameter of 500 μm or less at the multiplexing end. have.
　即ち、光合成器１１は、半導体レーザＬＤ１～ＬＤ４のレーザ光を合成するとともに、各々の半導体レーザＬＤ１～ＬＤ４から光合成器１１内の合波端までの光到達時間が各々の半導体レーザＬＤ１～ＬＤ４毎に異なるように、各々の半導体レーザＬＤ１～ＬＤ４から光合成器１１までの光路長を設定する。 That is, the light combiner 11 combines the laser beams of the semiconductor lasers LD1 to LD4, and the light arrival time from each of the semiconductor lasers LD1 to LD4 to the multiplexing end in the light combiner 11 is for each of the semiconductor lasers LD1 to LD4. In other words, the optical path lengths from the respective semiconductor lasers LD1 to LD4 to the optical combiner 11 are set.
　ハーフミラー１２は、光合成器１１からの合波されたレーザ光をモニタ光と出力光とに分光する。 The half mirror 12 separates the combined laser light from the light combiner 11 into monitor light and output light.
　フォトダイオードＰＤは、本発明の光検知素子に対応し、ハーフミラー１２で分光されたレーザ光を検知する。ＣＰＵ１３は、フォトダイオードＰＤで検知されたレーザ光の出力値をメモリ１４に記憶したり、出力値を表示部１５に表示させる。 The photodiode PD corresponds to the light detection element of the present invention and detects the laser light dispersed by the half mirror 12. The CPU 13 stores the output value of the laser beam detected by the photodiode PD in the memory 14 or causes the display unit 15 to display the output value.
　次にこのように構成された実施例１の半導体レーザ装置の動作を図１を参照しながら説明する。 Next, the operation of the semiconductor laser device of the first embodiment configured as described above will be described with reference to FIG.
　まず、ＬＤ駆動回路１０が、複数の半導体レーザＬＤ１～ＬＤ４に電流が供給すると、各半導体レーザＬＤ１～ＬＤ４は、ＬＤ１，ＬＤ２，ＬＤ３，ＬＤ４の順番にレーザ光を出力する。 First, when the LD driving circuit 10 supplies current to the plurality of semiconductor lasers LD1 to LD4, the semiconductor lasers LD1 to LD4 output laser beams in the order of LD1, LD2, LD3, and LD4.
　第１番目に出力された半導体レーザＬＤ１からのレーザ光は、光合成器１１、ハーフミラー１２を介して第１番目にフォトダイオードＰＤにより検知される。第２番目に出力された半導体レーザＬＤ２からのレーザ光は、光合成器１１、ハーフミラー１２を介して第２番目にフォトダイオードＰＤにより検知される。 The first laser beam emitted from the semiconductor laser LD1 is detected by the photodiode PD first through the light combiner 11 and the half mirror 12. The second laser beam output from the semiconductor laser LD2 is detected second by the photodiode PD via the photo combiner 11 and the half mirror 12.
　第３番目に出力された半導体レーザＬＤ３からのレーザ光は、光合成器１１、ハーフミラー１２を介して第３番目にフォトダイオードＰＤにより検知される。第４番目に出力された半導体レーザＬＤ４からのレーザ光は、光合成器１１、ハーフミラー１２を介して第４番目にフォトダイオードＰＤにより検知される。 The laser beam from the semiconductor laser LD3 output third is detected by the photodiode PD third through the photo combiner 11 and the half mirror 12. The fourth laser light output from the semiconductor laser LD4 is detected by the photodiode PD fourth through the optical combiner 11 and the half mirror 12.
　このため、図２に示すように、フォトダイオードＰＤの出力は、半導体レーザＬＤ１、半導体レーザＬＤ２、半導体レーザＬＤ３、半導体レーザＬＤ４の順で時間的に得られる。図２に示す例では、各半導体レーザＬＤ１～ＬＤ４が正常であるので、フォトダイオードＰＤの各出力は一定値である。 Therefore, as shown in FIG. 2, the output of the photodiode PD can be obtained temporally in the order of the semiconductor laser LD1, the semiconductor laser LD2, the semiconductor laser LD3, and the semiconductor laser LD4. In the example shown in FIG. 2, since each of the semiconductor lasers LD1 to LD4 is normal, each output of the photodiode PD is a constant value.
　しかし、図３に示す例では、第３番目の出力が他の出力に比較して低いので、半導体レーザＬＤ３が劣化していることを判定できる。また、半導体レーザが故障した場合にも、同様にフォトダイオードＰＤの時間的な出力変化により故障した半導体レーザを検出できる。 However, in the example shown in FIG. 3, since the third output is lower than the other outputs, it can be determined that the semiconductor laser LD3 has deteriorated. Further, even when a semiconductor laser fails, it is possible to detect a failed semiconductor laser due to a temporal output change of the photodiode PD.
　このように実施例１の半導体レーザ装置によれば、各々の半導体レーザＬＤ１～ＬＤ４の発光タイミングが半導体レーザＬＤ１～ＬＤ４毎に異なるように、ＬＤ駆動回路１０から半導体レーザＬＤ１～ＬＤ４までの線路長を調整し、且つ各々の半導体レーザＬＤ１～ＬＤ４から合波端までの光到達時間が半導体レーザＬＤ１～ＬＤ４毎に異なるように、各々の半導体レーザＬＤ１～ＬＤ４から光合成器１１までの光路長を調整するので、各々の半導体レーザＬＤ１～ＬＤ４の光到達時間と光出力とに基づき、複数の半導体レーザＬＤ１～ＬＤ４の一部の故障や劣化を検知できる。また、複雑なタイミング制御回路を用いることなく、単一のフォトダイオードＰＤにより半導体レーザＬＤ１～ＬＤ４の一部の故障や劣化を検知できるので、小型化及び低コスト化を図ることができる。 As described above, according to the semiconductor laser device of the first embodiment, the line length from the LD drive circuit 10 to the semiconductor lasers LD1 to LD4 is set so that the light emission timings of the respective semiconductor lasers LD1 to LD4 are different for the semiconductor lasers LD1 to LD4. And the optical path length from each of the semiconductor lasers LD1 to LD4 to the optical combiner 11 is adjusted so that the light arrival time from each of the semiconductor lasers LD1 to LD4 to the multiplexing end is different for each of the semiconductor lasers LD1 to LD4. Therefore, it is possible to detect a failure or deterioration of a part of the plurality of semiconductor lasers LD1 to LD4 based on the light arrival time and the light output of each of the semiconductor lasers LD1 to LD4. In addition, since a single photodiode PD can detect a failure or deterioration of a part of the semiconductor lasers LD1 to LD4 without using a complicated timing control circuit, it is possible to reduce the size and cost.
（実施例２）
　図４は本発明の実施例２に係る半導体レーザ装置の構成を示す図である。実施例２に係る半導体レーザ装置は、ＬＤ駆動回路１０、バイポーラ型のＮＰＮのトランジスタＱ１，Ｑ２、半導体レーザＬＤ１，ＬＤ２、光合成器１１ａ、フォトダイオードＰＤ、ＣＰＵ１３、メモリ１４、表示部１５を備える。 (Example 2)
FIG. 4 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 2 of the present invention. The semiconductor laser device according to the second embodiment includes an LD drive circuit 10, bipolar NPN transistors Q1 and Q2, semiconductor lasers LD1 and LD2, a photosynthesizer 11a, a photodiode PD, a CPU 13, a memory 14, and a display unit 15.
　ＬＤ駆動回路１０とトランジスタＱ１との距離Ｓ１と、ＬＤ駆動回路１０とトランジスタＱ２との距離Ｓ２とは、同じである。ＬＤ駆動回路１０は、トランジスタＱ１，Ｑ２の各々のベースに電圧を印加することによりトランジスタＱ１，Ｑ２に電流を流す。 The distance S1 between the LD drive circuit 10 and the transistor Q1 and the distance S2 between the LD drive circuit 10 and the transistor Q2 are the same. The LD driving circuit 10 applies a voltage to the bases of the transistors Q1 and Q2, thereby causing a current to flow through the transistors Q1 and Q2.
　トランジスタＱ１，Ｑ２のコレクタには電源Ｖｃｃが接続され、トランジスタＱ１のエミッタには半導体レーザＬＤ１のアノードが接続され、トランジスタＱ２のエミッタには半導体レーザＬＤ２のアノードが接続されている。 The power source Vcc is connected to the collectors of the transistors Q1 and Q2, the anode of the semiconductor laser LD1 is connected to the emitter of the transistor Q1, and the anode of the semiconductor laser LD2 is connected to the emitter of the transistor Q2.
　光合成器１１ａは、半導体レーザＬＤ１，ＬＤ２から光合成器１１内の合波端までの距離ＳLD11，ＳLD12がＳLD11＞ＳLD12となるように配置されている。 The light combiner 11a is arranged such that the distances SLD11 and SLD12 from the semiconductor lasers LD1 and LD2 to the multiplexing end in the light combiner 11 satisfy SLD11> SLD12.
　図４に示す光合成器１１ａ、フォトダイオードＰＤ、ＣＰＵ１３、メモリ１４、表示部１５は、図１に示すそれらと同じであるので、それらの説明は省略する。 4 are the same as those shown in FIG. 1 because the optical combiner 11a, the photodiode PD, the CPU 13, the memory 14, and the display unit 15 shown in FIG. 4 are omitted.
　このように実施例２の半導体レーザ装置によれば、ＬＤ駆動回路１０からの電圧によりトランジスタＱ１，Ｑ２がオンすると、半導体レーザＬＤ１，ＬＤ２に同時に電流が流れる。すると、半導体レーザＬＤ２からのレーザ光は第１番目に光合成器１１ａに到達する。一方、半導体レーザＬＤ１からのレーザ光は第２番目に光合成器１１ａに到達する。 As described above, according to the semiconductor laser device of the second embodiment, when the transistors Q1 and Q2 are turned on by the voltage from the LD driving circuit 10, a current flows through the semiconductor lasers LD1 and LD2 simultaneously. Then, the laser beam from the semiconductor laser LD2 reaches the optical combiner 11a first. On the other hand, the laser beam from the semiconductor laser LD1 reaches the optical combiner 11a second.
　従って、最初にフォトダイオードＰＤで検出される出力は、半導体レーザＬＤ２からのレーザ光の出力であり、次に、フォトダイオードＰＤで検出される出力は、半導体レーザＬＤ１からのレーザ光の出力である。この時間的な出力の変化により半導体レーザＬＤ１，ＬＤ２の劣化、故障を判定することができる。また実施例１では、ＬＤ駆動回路１０から各々の半導体レーザＬＤ１～ＬＤ４までの距離を設定し、且つ各々の半導体レーザＬＤ１～ＬＤ４から光合成器１１内の合波端までの距離を設定したが、実施例２では、各々の半導体レーザＬＤ１～ＬＤ４から光合成器１１ａ内の合波端までの距離（光路長）を設定するのみで、半導体レーザの劣化、故障を判定することができる。 Therefore, the output first detected by the photodiode PD is the output of the laser light from the semiconductor laser LD2, and the output detected by the photodiode PD is the output of the laser light from the semiconductor laser LD1. . The deterioration and failure of the semiconductor lasers LD1 and LD2 can be determined by the change in output with time. In the first embodiment, the distance from the LD drive circuit 10 to each of the semiconductor lasers LD1 to LD4 is set, and the distance from each of the semiconductor lasers LD1 to LD4 to the multiplexing end in the optical combiner 11 is set. In the second embodiment, it is possible to determine the deterioration or failure of the semiconductor laser only by setting the distance (optical path length) from each of the semiconductor lasers LD1 to LD4 to the multiplexing end in the optical combiner 11a.
（実施例３）
　図５は本発明の実施例３に係る半導体レーザ装置の構成を示す図である。実施例３に係る半導体レーザ装置は、図１に示す実施例１に係る半導体レーザ装置に対して、さらに、半導体レーザＬＤ４と光合成器１１との間の光路にプリズム１６ａ，１６ｂを配置したことを特徴とする。プリズム１６ａ，１６ｂは、本発明の光伝搬調整用の光学素子に対応する。 (Example 3)
FIG. 5 is a diagram showing a configuration of a semiconductor laser apparatus according to Example 3 of the present invention. The semiconductor laser device according to the third embodiment is different from the semiconductor laser device according to the first embodiment shown in FIG. 1 in that prisms 16a and 16b are arranged in the optical path between the semiconductor laser LD4 and the optical combiner 11. Features. The prisms 16a and 16b correspond to the optical element for adjusting light propagation according to the present invention.
　このように実施例３に係る半導体レーザ装置によれば、半導体レーザＬＤ４と光合成器１１との間の光路にプリズム１６ａ，１６ｂを配置したので、半導体レーザＬＤ４と光合成器１１との間の光到達時間を調整することができる。このため、半導体レーザＬＤ１～ＬＤ４の劣化、故障を容易に判定することができる。 As described above, in the semiconductor laser device according to the third embodiment, since the prisms 16a and 16b are arranged in the optical path between the semiconductor laser LD4 and the light combiner 11, light reaches between the semiconductor laser LD4 and the light combiner 11. The time can be adjusted. Therefore, it is possible to easily determine the deterioration or failure of the semiconductor lasers LD1 to LD4.
（実施例４）
　図６は本発明の実施例４に係る半導体レーザ装置の構成を示す図である。実施例４に係る半導体レーザ装置は、図１に示す実施例１に係る半導体レーザ装置に対して、各々の半導体レーザＬＤ１～ＬＤ４を誘電率が異なる導電パターンＰＴ１～ＰＴ４により接続したことを特徴とする。 Example 4
FIG. 6 is a diagram showing a configuration of a semiconductor laser device according to Embodiment 4 of the present invention. The semiconductor laser device according to the fourth embodiment is characterized in that the semiconductor lasers LD1 to LD4 are connected to the semiconductor laser device according to the first embodiment shown in FIG. 1 by conductive patterns PT1 to PT4 having different dielectric constants. To do.
　実施例４に係る半導体レーザ装置によれば、誘電率が異なる導電パターンＰＴ１～ＰＴ４により各々の半導体レーザＬＤ１～ＬＤ４を接続したので、電流伝達時間が互いに異なる。このため、駆動回路１０から各々の半導体レーザＬＤ１～ＬＤ４までの電流到達時間を調整することができるので、半導体レーザＬＤ１～ＬＤ４の劣化、故障を容易に判定することができる。　 In the semiconductor laser device according to Example 4, since the semiconductor lasers LD1 to LD4 are connected by the conductive patterns PT1 to PT4 having different dielectric constants, the current transmission times are different from each other. For this reason, the current arrival time from the drive circuit 10 to each of the semiconductor lasers LD1 to LD4 can be adjusted, so that the deterioration or failure of the semiconductor lasers LD1 to LD4 can be easily determined. *
　本発明は、レーザ加工機、レーザ照明機器に適用可能である。 The present invention is applicable to laser processing machines and laser lighting equipment.

Claims (4)

  1. 　複数の半導体レーザと、
    　前記複数の半導体レーザに電流を供給する駆動回路と、
    　前記複数の半導体レーザのレーザ光を合成する光合成器と、
    　前記光合成器で合成された前記複数の半導体レーザのレーザ光を検知する光検知素子を備え、
    　前記光合成器は、前記複数の半導体レーザの各々の半導体レーザから前記光合成器内の合波端までの光到達時間が前記各々の半導体レーザ毎に異なるように、前記各々の半導体レーザから前記光合成器までの光路長を設定する半導体レーザ装置。     A plurality of semiconductor lasers;
    A drive circuit for supplying current to the plurality of semiconductor lasers;
    A light combiner that combines the laser beams of the plurality of semiconductor lasers;
    Comprising a light detecting element for detecting laser light of the plurality of semiconductor lasers combined by the light combiner;
    The optical synthesizer is configured so that the light arrival time from the semiconductor laser of each of the plurality of semiconductor lasers to the multiplexing end in the optical synthesizer is different for each of the semiconductor lasers. Semiconductor laser device that sets the optical path length up to.
  2. 　前記駆動回路に前記複数の半導体レーザを直列に接続することにより、前記駆動回路から前記各々の半導体レーザまでの線路長を調整する請求項１記載の半導体レーザ装置。 The semiconductor laser device according to claim 1, wherein a line length from the drive circuit to each of the semiconductor lasers is adjusted by connecting the plurality of semiconductor lasers in series to the drive circuit.
  3. 　前記光到達時間を調整するために、光路に光伝搬調整用の光学素子を配置した請求項１又は請求項２記載の半導体レーザ装置。 3. The semiconductor laser device according to claim 1, wherein an optical element for adjusting light propagation is disposed in an optical path in order to adjust the light arrival time.
  4. 　前記駆動回路から前記各々の半導体レーザまでの電流到達時間を調整するために、誘電率が異なる導電パターンにより前記各々の半導体レーザを接続した請求項１乃至請求項３のいずれか１項記載の半導体レーザ装置。 4. The semiconductor according to claim 1, wherein each semiconductor laser is connected by a conductive pattern having a different dielectric constant in order to adjust a current arrival time from the drive circuit to each of the semiconductor lasers. Laser device.
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